TW201346059A - 一種ｍｏｃｖｄ設備的清潔方法 - Google Patents
一種ｍｏｃｖｄ設備的清潔方法 Download PDFInfo
- Publication number
- TW201346059A TW201346059A TW101151274A TW101151274A TW201346059A TW 201346059 A TW201346059 A TW 201346059A TW 101151274 A TW101151274 A TW 101151274A TW 101151274 A TW101151274 A TW 101151274A TW 201346059 A TW201346059 A TW 201346059A
- Authority
- TW
- Taiwan
- Prior art keywords
- reaction chamber
- cleaning
- gas
- plasma
- wall
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 140
- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title claims abstract 18
- 238000001816 cooling Methods 0.000 claims description 17
- 239000007788 liquid Substances 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000009616 inductively coupled plasma Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 239000003921 oil Substances 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- 229940044949 eucalyptus oil Drugs 0.000 claims description 2
- 239000010642 eucalyptus oil Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 112
- 230000000630 rising effect Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 23
- 239000010408 film Substances 0.000 description 14
- 229910021478 group 5 element Inorganic materials 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 9
- 230000005684 electric field Effects 0.000 description 8
- 239000012495 reaction gas Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210082876.6A CN102615068B (zh) | 2012-03-26 | 2012-03-26 | Mocvd设备的清洁方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201346059A true TW201346059A (zh) | 2013-11-16 |
| TWI458853B TWI458853B (https=) | 2014-11-01 |
Family
ID=46555472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101151274A TW201346059A (zh) | 2012-03-26 | 2012-12-28 | 一種ｍｏｃｖｄ設備的清潔方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102615068B (https=) |
| TW (1) | TW201346059A (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103938177B (zh) * | 2014-05-07 | 2015-12-30 | 南昌黄绿照明有限公司 | 可用氯气在线清洗的非钎焊mocvd喷头 |
| CN105986242B (zh) * | 2015-02-16 | 2018-07-13 | 中微半导体设备(上海)有限公司 | 化学气相沉积装置与基片处理方法 |
| CN114540794A (zh) * | 2017-04-14 | 2022-05-27 | 西安德盟特半导体科技有限公司 | 一种去除cvd反应腔体内壁沉积膜的方法及装置 |
| CN114514336B (zh) * | 2019-09-27 | 2024-03-26 | 慧理示先进技术公司 | 用于闪烁体沉积的基板固定装置、包括其的基板沉积装置以及使用其的闪烁体沉积方法 |
| CN118874932B (zh) * | 2024-08-28 | 2025-03-25 | 江苏凯威特斯半导体科技有限公司 | 一种针对半导体化学气相沉积喷淋头的清洗方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060130971A1 (en) * | 2004-12-21 | 2006-06-22 | Applied Materials, Inc. | Apparatus for generating plasma by RF power |
| TW200718802A (en) * | 2005-08-02 | 2007-05-16 | Massachusetts Inst Technology | Method of using NF3 for removing surface deposits |
| CN101238238A (zh) * | 2005-08-02 | 2008-08-06 | 麻省理工学院 | 使用氟化硫从cvd/pecvd腔的内部除去表面沉积物的远程腔方法 |
| WO2007045110A2 (en) * | 2005-10-17 | 2007-04-26 | Oc Oerlikon Balzers Ag | Cleaning means for large area pecvd devices using a remote plasma source |
| CN100549226C (zh) * | 2006-04-29 | 2009-10-14 | 联华电子股份有限公司 | 化学气相沉积设备的清洁方法 |
| US20070267143A1 (en) * | 2006-05-16 | 2007-11-22 | Applied Materials, Inc. | In situ cleaning of CVD system exhaust |
| US7790635B2 (en) * | 2006-12-14 | 2010-09-07 | Applied Materials, Inc. | Method to increase the compressive stress of PECVD dielectric films |
| US8183132B2 (en) * | 2009-04-10 | 2012-05-22 | Applied Materials, Inc. | Methods for fabricating group III nitride structures with a cluster tool |
-
2012
- 2012-03-26 CN CN201210082876.6A patent/CN102615068B/zh active Active
- 2012-12-28 TW TW101151274A patent/TW201346059A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN102615068B (zh) | 2015-05-20 |
| TWI458853B (https=) | 2014-11-01 |
| CN102615068A (zh) | 2012-08-01 |
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