TW201342673A - Method for manufacturing light emitting diode - Google Patents
Method for manufacturing light emitting diode Download PDFInfo
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- TW201342673A TW201342673A TW101114402A TW101114402A TW201342673A TW 201342673 A TW201342673 A TW 201342673A TW 101114402 A TW101114402 A TW 101114402A TW 101114402 A TW101114402 A TW 101114402A TW 201342673 A TW201342673 A TW 201342673A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- Led Device Packages (AREA)
Abstract
Description
本發明涉及一種半導體封裝方法,尤其涉及一種發光二極體封裝方法。The present invention relates to a semiconductor packaging method, and more particularly to a light emitting diode packaging method.
發光二極體(Light Emitting Diode,LED)係一種可將電流轉換成特定波長範圍的光的半導體元件,憑藉其發光效率高、體積小、重量輕、環保等優點,已被廣泛地應用到當前的各個領域當中。Light Emitting Diode (LED) is a semiconductor component that converts current into light of a specific wavelength range. It has been widely used in current applications due to its high luminous efficiency, small size, light weight, and environmental protection. Among the various fields.
發光二極體封裝結構通常包括基座、與基座結合的二電極、固定在基座的反射杯內並連接至二電極的發光二極體晶片以及封裝該發光二極體晶片的封裝層。發光二極體的封裝層形成於反射杯中並與反射杯的上表面齊平。該封裝層通常係藉由注射或澆注的方式形成,在封裝的過程中容易自反射杯中溢出或流出而形成毛邊結構,影響發光二極體的製程良率。The LED package structure generally includes a susceptor, two electrodes coupled to the pedestal, a luminescent diode chip fixed in the reflective cup of the pedestal and connected to the two electrodes, and an encapsulation layer encapsulating the illuminating diode chip. An encapsulation layer of the light emitting diode is formed in the reflective cup and is flush with the upper surface of the reflective cup. The encapsulation layer is usually formed by injection or casting, and is easy to overflow or flow out from the reflective cup during the encapsulation process to form a burr structure, which affects the process yield of the LED.
本發明旨在提供一種去除封裝層毛邊結構的發光二極體封裝方法。The present invention is directed to a light emitting diode packaging method for removing a burr structure of an encapsulation layer.
一種發光二極體封裝方法,包括以下步驟:提供一基板,在基板上形成引腳結構和反射杯,所述引腳結構包括相互間隔的第一電極和第二電極,所述反射杯與該引腳結構及基板共同圍設形成一凹陷;在該凹陷內的引腳結構上設置發光元件,並將該發光元件電連接至該第一電極和第二電極;在凹陷內形成一封裝層以覆蓋該發光元件;及用噴砂技術處理封裝層及反射杯的上表面。A light emitting diode packaging method includes the steps of: providing a substrate, forming a pin structure and a reflective cup on the substrate, the pin structure comprising first and second electrodes spaced apart from each other, the reflective cup and the reflective cup a pin structure and a substrate are collectively formed to form a recess; a light emitting element is disposed on the pin structure in the recess, and the light emitting element is electrically connected to the first electrode and the second electrode; and an encapsulation layer is formed in the recess Covering the light-emitting element; and treating the encapsulation layer and the upper surface of the reflective cup with a sand blasting technique.
與先前技術相比,上述發光二極體的封裝方法利用噴砂技術處理封裝層表面,藉由噴料的衝擊和切削作用,在去除毛邊結構的同時將封裝層的表面加工成具有細微凸起的粗糙凹凸面,不僅有效提高了發光二極體的製程良率,還能增強出射光線的散射、降低全反射發生的幾率,從而在保證出光均勻的同時提升該發光二極體的出光效率。Compared with the prior art, the above-mentioned method for packaging a light-emitting diode utilizes a sand blasting technique to treat the surface of the package layer, and by the impact and cutting action of the spray, the surface of the package layer is processed into a fine protrusion while removing the burr structure. The rough concave and convex surface not only effectively improves the process yield of the light-emitting diode, but also enhances the scattering of the emitted light and reduces the probability of occurrence of total reflection, thereby improving the light-emitting efficiency of the light-emitting diode while ensuring uniform light emission.
下面參照附圖,結合具體實施例對本發明作進一步的描述。The invention will now be further described with reference to the specific embodiments thereof with reference to the accompanying drawings.
以下將結合附圖對本發明的發光二極體100封裝方法作進一步的詳細說明。The method of encapsulating the LED assembly 100 of the present invention will be further described in detail below with reference to the accompanying drawings.
第一步驟:首先請參見圖1,提供一基板10,該基板10包括一第一表面11和一與第一表面11相對設置的第二表面12。該基板10的第一表面11形成一引腳結構20,所述引腳結構20包括相互分離的一第一電極21和一第二電極22,每一電極21、22自該基板10的第一表面11延伸至該第二表面12。First Step: Referring first to FIG. 1, a substrate 10 is provided. The substrate 10 includes a first surface 11 and a second surface 12 disposed opposite the first surface 11. The first surface 11 of the substrate 10 forms a lead structure 20, and the lead structure 20 includes a first electrode 21 and a second electrode 22 separated from each other. The first electrode 21 and 22 are first from the substrate 10. Surface 11 extends to the second surface 12.
該基板10的第一表面11上還形成一反射杯30,所述反射杯30包括一上表面31和一下表面32,該反射杯30表面可形成有高反射材料,該反射杯30與該引腳結構20、以及未被引腳結構20覆蓋的基板第一表面11共同圍設形成一凹陷33,所述凹陷33的頂部尺寸大於其底部尺寸。本實施例中,採用嵌入注塑技術將該反射杯30與該基板10一體注塑形成。A reflective cup 30 is further formed on the first surface 11 of the substrate 10. The reflective cup 30 includes an upper surface 31 and a lower surface 32. The surface of the reflective cup 30 can be formed with a highly reflective material, and the reflective cup 30 and the lead The foot structure 20, and the first surface 11 of the substrate not covered by the lead structure 20, are collectively encased to form a recess 33 having a top dimension greater than its bottom dimension. In this embodiment, the reflective cup 30 is integrally molded with the substrate 10 by insert molding technology.
第二步驟:請參閱圖2,在該第一電極21的、靠近該第二電極22一端的表面上設置一發光元件40,所述發光元件40位於該凹陷33中。該發光元件40藉由導線分別電性連接至該第一電極21、第二電極22。本實施例中該發光元件40為發光二極體晶粒。可以理解的,在本步驟中,也可將發光元件40以晶片倒裝的形式固定在引腳結構20上,並借由導電的固晶膠使發光元件40的兩個電極分別與第一電極21、第二電極22形成電性連接。Second step: Referring to FIG. 2, a light-emitting element 40 is disposed on a surface of the first electrode 21 near an end of the second electrode 22, and the light-emitting element 40 is located in the recess 33. The light emitting element 40 is electrically connected to the first electrode 21 and the second electrode 22 respectively by wires. In the embodiment, the light emitting element 40 is a light emitting diode die. It can be understood that, in this step, the light-emitting element 40 can also be fixed on the lead structure 20 in the form of wafer flip-chip, and the two electrodes of the light-emitting element 40 and the first electrode are respectively separated by conductive solid glue. 21. The second electrode 22 is electrically connected.
第三步驟:請參閱圖3,在該發光元件40上覆蓋形成一封裝層50。該封裝層50填設於該凹陷33中,該封裝層50通常不可避免的自該凹陷33中溢出形成毛邊結構51,該毛邊結構51局部覆蓋反射杯30的上表面。該封裝層50可為摻雜有螢光粉的透明膠體,該螢光粉可為石榴石基螢光粉、矽酸鹽基螢光粉、原矽酸鹽基螢光粉、硫化物基螢光粉、硫代鎵酸鹽基螢光粉、氮氧化物基螢光粉和氮化物基螢光粉中的一種或多種。The third step: Referring to FIG. 3, an encapsulation layer 50 is formed on the light-emitting element 40. The encapsulation layer 50 is filled in the recess 33. The encapsulation layer 50 usually inevitably overflows from the recess 33 to form a burr structure 51 partially covering the upper surface of the reflective cup 30. The encapsulating layer 50 may be a transparent colloid doped with phosphor powder, and the phosphor powder may be garnet-based phosphor powder, citrate-based phosphor powder, orthosilicate-based phosphor powder, sulfide-based phosphoric acid. One or more of a light powder, a thiogallate-based phosphor, an oxynitride-based phosphor, and a nitride-based phosphor.
第四步驟:請參閱圖4和圖5,利用噴砂技術處理該封裝層50及反射杯30的上表面,即對自該凹陷33延伸而出的毛邊結構51進行處理。具體的,採用壓縮空氣為動力形成高速噴射束,將噴料高速噴射到封裝層50的表面上,由於噴料的衝擊和切削作用,使得毛邊結構51得以清除,並使得封裝層50的表面與反射杯30的上表面31齊平。同時,封裝層50的表面及反射杯30的上表面均被加工形成均勻分佈有細微凸起的粗糙凹凸面52,使得發光二極體100的出光面變得粗糙,從而在保證發光二極體100出光均勻的同時降低出射光線發生全反射的幾率,從而提升發光二極體100的出光效率。Fourth Step: Referring to FIG. 4 and FIG. 5, the upper surface of the encapsulation layer 50 and the reflective cup 30 is treated by a sand blasting technique, that is, the burr structure 51 extending from the recess 33 is processed. Specifically, a high-speed jet beam is formed by using compressed air as a power, and the spray material is sprayed onto the surface of the encapsulation layer 50 at a high speed. The burr structure 51 is removed due to the impact and cutting action of the spray material, and the surface of the encapsulation layer 50 is The upper surface 31 of the reflector cup 30 is flush. At the same time, the surface of the encapsulation layer 50 and the upper surface of the reflective cup 30 are processed to form a rough uneven surface 52 uniformly distributed with fine protrusions, so that the light-emitting surface of the light-emitting diode 100 becomes rough, thereby ensuring the light-emitting diode. The light output of 100 is uniform, and the probability of total reflection of the emitted light is reduced, thereby improving the light-emitting efficiency of the light-emitting diode 100.
與先前技術相比,上述發光二極體100的封裝方法利用噴砂技術處理封裝層50表面,藉由噴料的衝擊和切削作用,在去除毛邊結構51的同時將封裝層50的表面加工成具有細微凸起的粗糙凹凸面52,不僅有效提高了發光二極體100的製程良率,還能增強出射光線的散射、降低全反射發生的幾率,從而在保證出光均勻的同時提升該發光二極體100的出光效率。再者,利用噴砂技術去除毛邊結構51的同時形成粗糙的出光面,有效簡化發光二極體100的封裝工序,便於大量生產。Compared with the prior art, the above-described method of packaging the light-emitting diode 100 utilizes a sand blasting technique to treat the surface of the package layer 50, and by the impact and cutting action of the spray, the surface of the package layer 50 is processed to have the burr structure 51 removed. The fine convex rough surface 52 not only effectively improves the process yield of the light-emitting diode 100, but also enhances the scattering of the emitted light and reduces the probability of occurrence of total reflection, thereby improving the light-emitting diode while ensuring uniform light emission. The light extraction efficiency of the body 100. Furthermore, the blasting technique is used to remove the burr structure 51 and form a rough illuminating surface, which simplifies the packaging process of the illuminating diode 100 and facilitates mass production.
綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限製本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.
100...發光二極體100. . . Light-emitting diode
10...基板10. . . Substrate
11...第一表面11. . . First surface
12...第二表面12. . . Second surface
20...引腳結構20. . . Pin structure
21...第一電極twenty one. . . First electrode
22...第二電極twenty two. . . Second electrode
30...反射杯30. . . Reflective cup
31...上表面31. . . Upper surface
32...下表面32. . . lower surface
33...凹陷33. . . Depression
40...發光元件40. . . Light-emitting element
50...封裝層50. . . Encapsulation layer
51...毛邊結構51. . . Burr structure
52...凹凸面52. . . Concave surface
圖1至圖5為本發明實施例提供的發光二極體封裝方法的各步驟示意圖。1 to FIG. 5 are schematic diagrams showing steps of a method for packaging a light emitting diode according to an embodiment of the present invention.
10...基板10. . . Substrate
20...引腳結構20. . . Pin structure
21...第一電極twenty one. . . First electrode
22...第二電極twenty two. . . Second electrode
30...反射杯30. . . Reflective cup
40...發光元件40. . . Light-emitting element
50...封裝層50. . . Encapsulation layer
52...凹凸面52. . . Concave surface
Claims (7)
提供一基板,在基板上形成引腳結構和反射杯,所述引腳結構包括相互間隔的第一電極和第二電極,所述反射杯與該引腳結構及基板共同圍設形成一凹陷;
在該凹陷內的引腳結構上設置發光元件,並將該發光元件電連接至該第一電極和第二電極;
在凹陷內形成一封裝層以覆蓋該發光元件;及
用噴砂技術處理封裝層及反射杯的上表面。A light emitting diode packaging method includes the following steps:
Providing a substrate, a pin structure and a reflective cup are formed on the substrate, the pin structure includes a first electrode and a second electrode spaced apart from each other, and the reflective cup and the lead structure and the substrate are disposed together to form a recess;
Providing a light emitting element on the pin structure in the recess, and electrically connecting the light emitting element to the first electrode and the second electrode;
Forming an encapsulation layer in the recess to cover the light emitting element; and treating the encapsulation layer and the upper surface of the reflective cup by a sand blasting technique.
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CN2012100988924A CN103367565A (en) | 2012-04-06 | 2012-04-06 | Light-Emitting Diode (LED) packaging method |
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CN103700758B (en) * | 2013-12-16 | 2017-01-18 | 常州市武进区半导体照明应用技术研究院 | LED (Light-emitting Diode) package unit, package methods thereof, and array area light source |
CN103715340A (en) * | 2013-12-16 | 2014-04-09 | 常州市武进区半导体照明应用技术研究院 | LED packaging unit and LED packaging method and array surface light source |
JP6418200B2 (en) | 2016-05-31 | 2018-11-07 | 日亜化学工業株式会社 | Light emitting device and manufacturing method thereof |
CN107658376A (en) * | 2017-09-11 | 2018-02-02 | 聚灿光电科技(宿迁)有限公司 | A kind of adopting surface mounted LED encapsulates particle |
CN107731683B (en) * | 2017-09-26 | 2020-07-03 | 木林森股份有限公司 | Processing method for surface roughness of LED lamp bead |
CN107994108A (en) * | 2017-12-26 | 2018-05-04 | 深圳市灏天光电有限公司 | A kind of anti-fracture stent and its production method |
US20210359177A1 (en) * | 2018-09-28 | 2021-11-18 | Jiangsu New Cloud China Photoelectric Technology Co., LTD | LED lamp and method for increasing lumens thereof |
CN113329564B (en) * | 2021-04-10 | 2022-04-19 | 山东永而佳电子科技有限公司 | Light-emitting diode production process and surface roughening processing device |
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CN2829097Y (en) * | 2005-01-25 | 2006-10-18 | 宏齐科技股份有限公司 | LED with rough panel |
CN2901584Y (en) * | 2006-04-03 | 2007-05-16 | 一诠精密工业股份有限公司 | Rubber seat structure improvement of SMD light emitting body rack |
JPWO2008111504A1 (en) * | 2007-03-12 | 2010-06-24 | 日亜化学工業株式会社 | High power light emitting device and package used therefor |
US9431589B2 (en) * | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
US8288785B2 (en) * | 2008-12-03 | 2012-10-16 | Seoul Semiconductor Co., Ltd. | Lead frame having light-reflecting layer, light emitting diode having the lead frame, and backlight unit having the light emitting diode |
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