TW201335409A - Magnetron sputtering apparatus - Google Patents

Abstract

A magnetron sputtering apparatus comprises a sputtering cavity, a magnetization unit and a magnetic-conducting ring. The sputtering cavity has a loading portion and a supporting portion opposite to the loading portion such that a sputtering space is defined between the two portions. The loading portion and the supporting portion are respectively used for loading a substrate and supporting a target. The magnetization unit is arranged at one side of the sputtering cavity and has a magnetization side facing to the supporting portion. The magnetic-conducting ring is arranged between the target and the magnetization unit and is symmetric at two axes perpendicular to each other.

Description

Magnetron sputtering machine

The present invention relates to a magnetron sputtering machine, and more particularly to a magnetron sputtering machine using a direct current sputtering method.

According to the semiconductor (Semiconductor) and liquid crystal display (LCD) related industries, the Magnetron Sputtering System (MSS) is widely used in thin-film deposition processes, in which DC magnetron sputtering A plating machine (DC MSS) uses an electric field to drive charged particles (eg, plasma, plasma) in a low vacuum environment (eg, a vacuum filled with argon, Ar), and directs the charged particles with an effective impact by a magnetic field. a target (Target), after the atoms on the surface of the target exchange kinetic energy with the high-energy charged particles, ion sputtering is generated, so that the ions are splashed by collision, and finally deposited on a substrate (Substrate, ie, A film is formed on the object to be plated.

Referring to FIG. 1, a conventional magnetron sputtering machine 9 is disclosed, which includes a sputtering chamber 91 and a magnetron 92. The sputtering chamber 91 has a bearing end portion 911, a coupling end portion 912, a positive electrode plate 913 and a negative electrode plate 914. The bearing end portion 911 and the coupling end portion 912 are opposite ends; The positive electrode plate 913 is coupled to the carrying end portion 911, and the positive electrode plate 913 is provided with a substrate B. The negative electrode plate 914 is coupled to the joint end portion 912, and the negative electrode plate 914 is provided for setting. a target T; wherein the positive electrode plate 913 and the negative electrode plate 914 are respectively connected to the positive and negative electrodes of the DC power source VDC, and an electric field is generated between the positive electrode plate 913 and the negative electrode plate 914 for driving Charged particles. The magnetron 92 is disposed adjacent to the bonding end 912 to control the target T for ion sputtering operation by the magnetic field generated by the magnetron 92. The magnetron 92 has a main magnet member 921, an outer ring magnet member 922 and a yoke 923. The main magnet member 921 is disposed on a bonding surface of the yoke 923; the outer ring magnet member 922 is disposed around the outer circumference of the main magnet member 921, and the outer ring magnet member 922 is also disposed on the yoke One of the irons 923 is coupled to the surface; wherein the magnetic lines of force generated by the main magnet member 921 and the outer ring magnet member 922 form a closed magnetic path P, and the magnetic lines of force pass through the target T, so that the atoms on the surface of the target T are The charged particles collide to generate ion sputtering to perform a sputtering operation on the substrate B.

However, when the magnetron 92 controls the target T for ion sputtering, the surface of the target T may be etched by ion sputtering, wherein the size and shape of the etched track cannot be The magnetic field generated by the magnetron 92 is precisely controlled, so that the target T is easily partially broken down and cannot be used any more. Therefore, the target utilization rate of the conventional magnetron sputtering machine 9 is low, causing ion splashing. The cost of shooting targets is high.

In addition, the Chinese Patent Publication No. 201132783 "Magnetron Sputtering Machine" invention patent discloses another conventional magnetron sputtering machine comprising a sputtering chamber, a guiding coil and a magnetic control device. The sputtering chamber has a bearing bottom portion and a bonding end portion, wherein the bearing bottom portion is provided with a plated object, the bonding end portion is provided with a target body, and the bearing bottom portion and the bonding end portion are defined to form a A sputtering space is provided, and a reference line is sequentially extended through the carrier bottom, the sputtering space, and the bonding end. The guiding coil is wound around a reference line of the sputtering cavity, and the guiding coil surrounds the sputtering space, thereby improving the overall sputtering performance. The magnetron is disposed on a side of the sputtering chamber having the bonding end, and a magnetized side and a magnetic guiding side are disposed on opposite sides of the magnetron, and the magnetized side faces the bonding end. The magnetron is further provided with an iron ring which is disposed on a surface of the target to widen the etching width on the target.

However, once the iron ring is set, the shape is fixed. When performing the ion sputtering operation required for different products, a target of a different shape such as a rectangle or a circle may be used. At this time, since the shape of the iron ring has been Fixed, when the shape of the iron ring and the target are too different, the target is still easily broken down, so that the improvement of the target utilization rate is limited.

Accordingly, in addition to the problem of poor target utilization rate, the above-mentioned various conventional magnetron sputtering machines have many limitations and disadvantages in actual use, which are inconvenient and need further improvement to improve their practicability. .

The main object of the present invention is to provide a magnetron sputtering machine which improves the target utilization rate by increasing the similarity of the magnetic flux ring to the etching track of the target by the surrounding shape of the magnetic conductive ring.

A magnetron sputtering machine includes: a sputtering chamber having a bearing end portion and a coupling end portion, wherein the bearing end portion and the coupling end portion are opposite ends, and the bearing bottom portion is provided with a a plated object, the bonding end is provided with a target; a magnetic control device is disposed on a side of the sputtering cavity having the bonding end, and the magnetron has a magnetized side, the magnetized side And a magnetically conductive ring is disposed between the target and the magnetron module, and the surrounding shape of the magnetically conductive ring is axially symmetric with respect to two mutually perpendicular axes.

Wherein, the magnetron has a circumferential magnet, and the surrounding shape of the magnetic ring corresponds to the surrounding shape of the circumferential magnet.

The magnetic conductive ring is divided into four magnetic conductive portions by the two axes as a symmetry center, and each of the magnetic conductive portions forms a right angle.

The magnetic conductive ring is divided into four magnetic conductive portions by the two axes as a symmetry center, and each of the magnetic conductive portions forms an arc.

The magnetic conductive ring is divided into four magnetic conductive portions by the two axes as a symmetry center, and each of the magnetic conductive portions forms a plurality of obtuse angles.

Wherein, the magnetic conductive ring is connected by four straight segments in four straight segments.

Wherein, the magnetic conductive ring is connected by two arc segments to two parallel straight segments.

Wherein, the magnetic conductive ring is made of a magnetic conductive material.

Wherein, the magnetic control module has a yoke, a main magnetic control and an outer ring magnetic control, the yoke is provided with the main magnetic control and the outer ring magnetic control, and the outer ring magnetic control surrounds the main magnetic control.

The method further includes a compensation magnetic control, wherein the compensation magnetic control is circumferentially disposed between the main magnetic control and the outer magnetic control.

The compensation coil is disposed around a central axis of the sputtering cavity, and the compensation coil is disposed between the bearing end and the bonding end.

The sputtering chamber further has a positive electrode plate and a negative electrode plate. One surface of the positive electrode plate is coupled to the bottom of the carrier, and the other surface of the positive electrode plate is provided with the object to be plated. A surface of the negative electrode is bonded to the bonding end, and another surface of the negative electrode is available for the target.

The above and other objects, features and advantages of the present invention will become more <RTIgt; It is a side view of a combination of preferred embodiments of the magnetron sputtering machine of the present invention. The magnetron sputtering machine comprises a sputtering chamber 1, a magnetic control module 2 and a magnetically conductive ring 3. The opposite ends of the sputtering chamber 1 are provided with a substrate 4 and a target 5, and the magnetron module 2 is disposed on the sputtering chamber 1 and the target 5 is disposed. On one side, the magnetic flux ring 3 is disposed between the target 5 and the magnetron module 2.

The sputtering chamber 1 is preferably a non-magnetic cavity so as not to affect the progress of the sputtering operation. The sputtering chamber 1 has a carrying end portion 11, a bonding end portion 12, a positive electrode plate 13, and a negative electrode plate 14. The carrying end portion 11 and the connecting end portion 12 are opposite ends; the positive electrode plate 13 is coupled to the carrying end portion 11, and the positive electrode plate 13 is provided with the substrate 4, for example: 200×100 a substrate of 5 cm (mm); and the negative electrode plate 14 is bonded to the bonding end portion 12, and the negative electrode plate 14 is provided for the target 5, for example, a target of 200 × 100 × 5 cm The positive electrode plate 13 and the negative electrode plate 14 can be respectively connected to the positive electrode and the negative electrode of the DC power source V. The substrate 4 and the target 5 define a sputtering space S. In this embodiment, the substrate 4 and the target 5 have a sputtering distance, for example, 102 cm.

Referring to FIG. 2 again, the magnetron module 2 is disposed on a side of the sputtering chamber 1 having the joint end portion 12, and the magnetron module 2 has a magnetized side M1 and a guide. The magnetic side M2, the magnetization side M1 and the magnetic conductive side M2 are located on opposite sides of the magnetron module 2, and the magnetization side M1 faces the target 5. In this embodiment, the magnetic control module 2 includes a yoke 21, a main magnetic control 22 and an outer ring magnetic control 23, the yoke 21 (for example: 200×100×10 cm iron, Fe) The main magnetic control 22 is surrounded by a permanent magnet 221 (for example, a 124×24×20 cm magnet), and the permanent magnet 221 is combined with the electromagnetic coil 222. The central portion of the yoke 21, the magnetic field change (eg, magnetization or demagnetization) generated by the electromagnetic coil 222 can be controlled by an external power source to provide an appropriate electromagnetic field of the target 5 for ion sputtering operation; the outer ring The magnetic control 23 surrounds the main magnetic control 22, and the outer ring magnetic control 23 is surrounded by a circumferential magnet 231 (for example, a magnet of 200×12×22 cm), and a circumferential electromagnetic coil 232 is disposed. The yoke 21 surrounds the permanent magnet 221, preferably corresponding to the shape of the target 5 to form a rectangular or circular magnet ring, and the circumferential electromagnetic coil 232 is disposed in the sputtering cavity 1 to receive an external power source. To control the position of the circumferential magnet 231 in the Z direction, the magnetic flux is equal to zero, wherein the position is the target 5 The position of the upper etching depth is maximized to prevent the target 5 from being broken down during the ion sputtering process, thereby improving the service life of the target 5; in addition, the magnetic control module 2 is further provided with a compensation loop magnetic control 24 ( For example, a permanent magnet), the compensation ring magnetic control 24 is preferably disposed at an intermediate position between the permanent magnet 221 of the main magnetic control 22 and the circumferential magnet 231 of the outer ring magnetic control 23 for reinforcing the target 5 The magnetic flux flowing upward in the Y direction widens the etching width on the target 5, thereby increasing the efficiency of use of the target 5. In addition, the magnetron sputtering machine of the present invention may further be provided with a compensation coil 6 which is wound with the central axis R of the sputtering chamber 1 as an axis, and the compensation coil 6 is surrounded by the splash. In the plating space S, the compensation coil 6 can also be excited by an external power source to generate magnetic lines of force. The guiding of the compensation coil 6 can assist the ion stabilization of the target 5 to be sputtered on the substrate 4.

Referring to FIG. 2 again, the magnetic conductive ring 3 is made of a magnetic conductive material (for example, iron, cobalt, nickel or alloy thereof), and the magnetic conductive ring 3 can be disposed on the target 5 and Between the magnetron modules 2, for example, the negative electrode plate 14 (as shown in FIG. 2) or the target 5 is preferably disposed on a surface of the target 5 facing the magnetron module 2, The surrounding shape of the magnetically permeable ring 3 is formed into an axisymmetric centering on two mutually perpendicular axes, for example, a ring shape such as a rectangle, a circle or an ellipse, preferably surrounding the shape of the ring magnet 231. Forming such that the magnetic conductive shape of the magnetic conductive ring 3 can correspond to the position where the magnetic flux of the circumferential magnet 231 is equal to zero in the Z direction, and the magnetic flux of the permanent magnet 221 and the circumferential magnet 231 is guided to flow in the Y direction. The surface of the target 5 can further control the shape and size of the etching track of the target 5. In this embodiment, the surrounding shape of the magnetically permeable ring 3 corresponds to the surrounding shape of the circumferential magnet 231, for example, a rectangular ring-shaped surrounding magnet 231 and a magnetically permeable ring 3, but this is not limit.

Referring to FIG. 3, the surrounding shape of the magnetically permeable ring 3 is divided into four magnetic guiding portions 31 by two mutually perpendicular axes A1 and A2, and the two ends of the respective magnetic conductive portions 31 are respectively One end of the other two magnetic conductive portions 31 is connected, and each of the magnetic conductive portions 31 can also form a structural design such as a right angle, an arc or a plurality of obtuse angles for improving the etching track of the magnetic conductive ring 3 and the target 5. The degree of similarity (Pattern Resemblance) can further improve the target utilization rate by the above-mentioned technical means of reducing or enlarging the folding ring. The following is a description of several embodiments of the magnetic conductive portion 31, but is not limited thereto.

For example, the magnetic conductive portion 31 may form a right angle L (as shown in FIGS. 3 and 4); or form an arc C (as shown in FIGS. 3 and 5), wherein When the magnetic conductive portion 31 forms the circular arc C, the magnetic conductive ring 3 can be formed by four straight circular segments connected in series by four straight segments (ie, similar to a rectangular shape), or formed by two circular arc segments connected to two A parallel straight line segment (ie, an ellipse similar to a playground runway), but not limited to this; or a plurality of obtuse angles, such as two obtuse angles O1 and O2 (as shown in Figures 3 and 6) .

Referring to the above list 1, the three embodiments of the magnetic conductive portion of the present invention (ie, the magnetic conductive portion 31 forms a right angle, a circular arc or a double obtuse angle), and the magnetic conductive ring 3 and the target 5 are etched. The similarity of the trajectories can reach 99.62%, 99.81% and 99.92% respectively.

Referring to FIG. 2 again, when the magnetic control sputtering machine of the present invention is used, the magnetic flux F1 turning point generated by the magnetic control module 2 can increase the charged particles striking the target 5, so that the target 5 is increased. The ions on the surface are sputtered toward the substrate 4, and when the ions of the target 5 are sputtered outward, an etching trajectory will be generated at the relative position of the magnetically permeable ring 3, and then generated by the compensation coil 6. The magnetic flux F2, which can guide the outwardly sputtered ions of the target 5, is smoothly deposited on the substrate 4, and a thin film is formed on the substrate 4.

Wherein, by forming the above three embodiments by the magnetic conductive portion 31 of the magnetic conductive ring 3, the etching track of the target 5 can be accurately controlled. Moreover, since the circumferential magnet 231 is disposed around the permanent magnet 221, the magnetic flux F1 forms a turning ring at a turning point of the N pole to the S pole (ie, a position where the magnetic flux in the Z direction is equal to zero), for example, a ring or An elliptical ring or the like, when the inflection ring is similar to the ring of the magnetically permeable ring 3, the fluxing amount of the magnetic flux F1 at the N-pole to the S-pole can be maximized, for example, 33%. Therefore, a new etching track can be generated at a portion where the target 5 has not been etched, thereby preventing the target 5 from being broken during the sputtering operation, thereby improving the utilization rate of the target 5 and sputtering of the substrate 4. effectiveness.

In summary, the magnetron sputtering machine of the present invention is formed by the magnetic conductive ring 3, and the magnetic conductive portion 31 of the magnetic conductive ring 3 is formed into the above three embodiments (ie, a straight angle, an arc or two The obtuse angle) can precisely control the etching trajectory of the target 5. Moreover, when the turning ring formed by the ring shape of the circumferential magnet 231 is similar to the ring shape of the magnetic conductive ring 3, the zoomable amount of the magnetic flux F1 in the N-to-S-pole turning ring can be maximized. A new etching trajectory is formed in different regions of the target 5, so that the target utilization rate is increased, and the effect of reducing the cost of the sputtering process is further achieved.

In addition, the magnetic flux ring 3 of the present invention can also be disposed on a magnetron sputtering machine (for example, a conventional magnetron sputtering machine 9) which is not provided with a magnetic conductive ring 3, so that the manufacturer does not need to repurchase the device (for example, The magnetron sputtering machine of the invention can improve the target utilization rate of the original equipment, thereby achieving the effect of reducing the cost of the sputtering process.

While the invention has been described in connection with the preferred embodiments described above, it is not intended to limit the scope of the invention. The technical scope of the invention is protected, and therefore the scope of the invention is defined by the scope of the appended claims.

[this invention]

1. . . Sputter chamber

11. . . Carrying end

12. . . Combined end

13. . . Positive electrode board

14. . . Negative electrode board

2. . . Magnetic control device

twenty one. . . Yoke

twenty two. . . Main magnetic control

221. . . permanent magnet

222. . . Electromagnetic coil

twenty three. . . Outer ring magnetic control

231. . . Ring magnet

232. . . Ring electromagnetic coil

twenty four. . . Compensation loop magnetic control

3. . . Magnetic flux ring

31. . . Magnetic guide

4. . . Substrate

5. . . Target

6. . . Compensation coil

A1, A2. . . axis

C. . . Arc

F1, F2. . . Flux

L. . . Right angle

O1, O2. . . Obtuse angle

R. . . The central axis

S. . . Sputtering space

V. . . DC power supply

X, Y, Z. . . direction

[知知]

9. . . Conventional magnetron sputtering machine

91. . . Sputter chamber

911. . . Carrying end

912. . . Combined end

913. . . Positive electrode board

914. . . Negative electrode board

92. . . Magnetic control device

921. . . Main magnet

922. . . Outer ring magnet

923. . . Yoke

B. . . Substrate

P. . . Closed magnetic path

T. . . Target

VDC. . . DC power supply

Figure 1: Side view of a combination of conventional magnetron sputtering machines.

Figure 2 is a side view of a combination of preferred embodiments of the magnetron sputtering machine of the present invention.

Figure 3: The bottom view of Figure 2.

Fig. 4 is a partial enlarged view of Fig. 3 (i.e., a schematic view of a first embodiment of the magnetic conducting portion of the present invention).

Fig. 5 is a view showing a second embodiment of the magnetic conductive portion of the present invention.

Fig. 6 is a view showing a third embodiment of the magnetic conductive portion of the present invention.

1. . . Sputter chamber

11. . . Carrying end

12. . . Combined end

13. . . Positive electrode board

14. . . Negative electrode board

2. . . Magnetic control device

twenty one. . . Yoke

twenty two. . . Main magnetic control

221. . . permanent magnet

222. . . Electromagnetic coil

twenty three. . . Outer ring magnetic control

231. . . Ring magnet

232. . . Ring electromagnetic coil

twenty four. . . Compensation loop magnetic control

3. . . Magnetic flux ring

4. . . Substrate

5. . . Target

6. . . Compensation coil

F1, F2. . . Flux

R. . . The central axis

S. . . Sputtering space

V. . . DC power supply

X, Y, Z. . . direction

Claims (12)

A magnetron sputtering machine includes: a sputtering chamber having a bearing end portion and a coupling end portion, wherein the bearing end portion and the coupling end portion are opposite ends, and the bearing bottom portion is provided with a a plated object, the bonding end is provided with a target; a magnetic control device is disposed on a side of the sputtering cavity having the bonding end, and the magnetron has a magnetized side, the magnetized side And a magnetically conductive ring is disposed between the target and the magnetron module, and the surrounding shape of the magnetically conductive ring is axially symmetric with respect to two mutually perpendicular axes. The magnetron sputtering machine of claim 1, wherein the magnetron has a circumferential magnet, and the surrounding shape of the magnetic ring corresponds to a circumferential shape of the circumferential magnet. The magnetron sputtering machine according to claim 1, wherein the magnetic flux guiding ring is divided into four magnetic conducting portions by the two axes as a center of symmetry, and each of the magnetic conductive portions forms a right angle. The magnetron sputtering machine according to claim 1, wherein the magnetic flux guiding ring is divided into four magnetic conducting portions by the two axes as a center of symmetry, and each of the magnetic conductive portions forms an arc. The magnetron sputtering machine according to claim 1, wherein the magnetic flux guiding ring is divided into four magnetic conducting portions by the two axes as a center of symmetry, and each of the magnetic conductive portions forms a plurality of obtuse angles. The magnetron sputtering machine of claim 1, wherein the magnetic flux ring is connected in series by four straight segments. The magnetron sputtering machine of claim 1, wherein the magnetic flux ring is connected by two arc segments to two parallel straight segments. A magnetron sputtering machine as described in claim 1, 2, 3, 4, 5, 6 or 7 wherein the magnetically permeable ring is made of a magnetically permeable material. The magnetron sputtering machine of claim 1, 2, 3, 4, 5, 6 or 7 wherein the magnetic control module has a yoke, a main magnetic control and an outer ring magnetic control. The yoke sets the main magnetic control and the outer ring magnetic control, and the outer ring magnetic control surrounds the main magnetic control. The magnetic control sputtering machine according to claim 9, further comprising a compensation magnetic control, wherein the compensation magnetic control is circumferentially disposed between the main magnetic control and the outer magnetic control. The magnetron sputtering machine of claim 1, 2, 3, 4, 5, 6 or 7 further comprising a compensation coil surrounding a central axis of the sputtering cavity, and the The compensation coil is disposed between the carrying end portion and the joint end portion. The magnetron sputtering machine of claim 1, 2, 3, 4, 5, 6 or 7 wherein the sputtering chamber further has a positive electrode plate and a negative electrode plate, the positive electrode plate One surface is bonded to the bottom of the carrier, and the other surface of the positive electrode is provided for the object to be plated, and a surface of the negative electrode is bonded to the joint end, and the other of the negative electrode is A surface system is available to set the target.