TW201330107A - Pressure leakage detection method for furnace tube of semiconductor manufacturing - Google Patents

Pressure leakage detection method for furnace tube of semiconductor manufacturing Download PDF

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TW201330107A
TW201330107A TW101100280A TW101100280A TW201330107A TW 201330107 A TW201330107 A TW 201330107A TW 101100280 A TW101100280 A TW 101100280A TW 101100280 A TW101100280 A TW 101100280A TW 201330107 A TW201330107 A TW 201330107A
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pressure
furnace tube
state
low pressure
medium
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TW101100280A
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TWI473169B (en
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Kui-lin LIU
Jian-hong ZHANG
zhi-long Wang
shi-yan Chen
Zheng-Jie Huang
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Rexchip Electronics Corp
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Abstract

A pressure leakage detection method for furnace tube of semiconductor manufacturing includes closing at least one inlet of the furnace tube, controlling the furnace tube at a low pressure status to observe the pressure variations inside the furnace tube to obtain a low pressure variation information, adjusting the furnace tube at a medium pressure status between 1 atm and the low pressure to observe the pressure variations inside the furnace tube to obtain a medium pressure variation information. Based on the low pressure variation information and the medium pressure variation information obtained at the low pressure status and the medium pressure status in the present invention, the pressure leakage can be detected so that can prevent the problems of low yield due to the bad manufacturing environment.

Description

半導體製程爐管之壓力測漏方法Pressure measuring method for semiconductor process furnace tube

    本發明係有關一種壓力測漏的方法,尤指一種半導體製程爐管之壓力測漏方法。The invention relates to a method for pressure leak detection, in particular to a pressure leak detection method for a semiconductor process furnace tube.

    於半導體之製程中,必須經過定義光阻、曝光、顯影、蝕刻、離子佈植、摻雜及沉積等過程,而其中有許多步驟必須精密的控制環境變數如製程氣壓以及氣體密度等等,而常常使用到反應腔體(chamber)來進行環境的穩定控制,如爐管、擴散爐管及真空爐管等。其中爐管常需要與外部管路連接,以進行氣體的交換或利用該外部管路所輸入之氣體進行製程。而為了避免環境變化所造成之製程影響,必須盡可能的避免不必要的環境差異變動。In the semiconductor process, it is necessary to define processes such as photoresist, exposure, development, etching, ion implantation, doping and deposition, and many of them must precisely control environmental variables such as process gas pressure and gas density, etc. The reaction chamber is often used for stable control of the environment, such as furnace tubes, diffusion tubes, and vacuum tubes. The furnace tube often needs to be connected to an external pipeline for gas exchange or by using the gas input from the external pipeline for the process. In order to avoid the influence of the process caused by environmental changes, it is necessary to avoid unnecessary changes in environmental differences as much as possible.

    請參閱「圖1」及「圖2」所示,其係為半導體製程之爐管結構示意圖,該爐管1具有至少一連接輸氣管體2的輸出入口3以及一進行爐管1抽氣的幫浦4,藉由該幫浦4之設置而可對該爐管1進行抽氣,以於真空狀態下利用該輸氣管體2進行氣體的輸入進行半導體製程,而為了防止該輸氣管體2與該輸出入口3之連接處的間隙6發生漏氣問題,其係於該輸氣管體2與該輸出入口3之間設置一彈性環5,藉此密封該輸氣管體2與該輸出入口3之間的間隙6,而解決可能發生的漏氣問題。但由於彈性環5之壽命有限,必須定期更換,且若彈性環5於更換後未完全密合該間隙6時,仍有氣體洩漏的問題。為了檢查漏氣狀況,一般係利用幫浦4控制該爐管1內之氣壓至低壓或真空的狀態,並維持一段時間來觀察該爐管1內的氣壓是否有變化,藉此得知爐管1是否有漏氣問題的發生。Please refer to FIG. 1 and FIG. 2, which are schematic diagrams of the structure of a furnace tube of a semiconductor process. The furnace tube 1 has at least one output inlet 3 connected to the gas pipe body 2 and a gas extraction pipe 1 The pump 4 can be evacuated by the setting of the pump 4 to perform gas processing by using the gas pipe body 2 in a vacuum state, and the gas pipe body 2 is prevented. A gas leakage problem occurs in the gap 6 at the junction with the output inlet 3, and an elastic ring 5 is disposed between the gas pipe body 2 and the output inlet 3, thereby sealing the gas pipe body 2 and the output inlet 3 Between the gaps 6, and solve the problem of air leaks that may occur. However, since the life of the elastic ring 5 is limited, it must be periodically replaced, and if the elastic ring 5 does not completely close the gap 6 after replacement, there is still a problem of gas leakage. In order to check the air leakage condition, the pump 4 is generally used to control the air pressure in the furnace tube 1 to a low pressure or a vacuum state, and for a period of time to observe whether there is a change in the air pressure in the furnace tube 1, thereby knowing the furnace tube. 1 Is there a gas leak problem?

    但當爐管1處於低壓狀態時,該彈性環5便會因為爐管1內外壓力的不同而被強制吸附於該輸氣管體2以及該輸出入口3之間的間隙6,因而在真空狀態或低壓狀態下時,難以發現彈性環5損毀或該彈性環5並未正確設置於該間隙6上的問題,使得該爐管1之封閉狀態被判斷為正常,但事實上,該彈性環5已經損壞或該輸氣管體2與該輸出入口3之間並未完全緊鎖,而造成誤判。是以經常造成大量的晶圓受到爐管1漏氣的影響,而降低製程良率。However, when the furnace tube 1 is in a low pressure state, the elastic ring 5 is forcibly adsorbed to the gap 6 between the gas pipe body 2 and the output inlet 3 due to the difference in pressure inside and outside the furnace tube 1, and thus is in a vacuum state or In the low pressure state, it is difficult to find that the elastic ring 5 is damaged or the elastic ring 5 is not properly disposed on the gap 6, so that the closed state of the furnace tube 1 is judged to be normal, but in fact, the elastic ring 5 has Damage or mismatch between the gas pipe body 2 and the output inlet 3 is not completely locked. This is because the often caused large number of wafers are affected by the gas leakage of the furnace tube 1 and the process yield is reduced.

    其中如中華民國專利公告第386260號之「經由監測底壓以即時偵測電漿蝕刻室漏氣之方法」中所揭露之漏氣偵測的方法,其係透過正常底壓以及所量測到的反應室的即時底壓之差距,判斷漏洩狀態之正常與否,並因此達到即時監控的目的。但仍未解決上述因底壓偵測無法有效發現彈性環損毀或彈性環設置不正確的問題。The method of detecting air leakage disclosed in the method of "detecting the leakage of the plasma etching chamber by monitoring the bottom pressure" in the Republic of China Patent Publication No. 386260, which is measured by the normal bottom pressure and the measured amount. The difference in the instantaneous pressure of the reaction chamber determines whether the leakage state is normal or not, and thus achieves the purpose of immediate monitoring. However, the above problem that the elastic ring damage or the elastic ring setting is not properly detected due to the bottom pressure detection cannot be effectively solved.

  本發明之主要目的,在於解決底壓測漏的方法無法有效發現彈性環損毀或彈性環設置不正確的問題。
  為達上述目的,本發明提供一種半導體製程爐管之壓力測漏方法,其包含有以下步驟:
  S1:封閉一爐管之至少一輸出入口,並利用一與該爐管連通的幫浦進行抽氣至一低壓狀態,該低壓狀態之氣體壓力小於標準大氣壓;
  S2:於該低壓狀態進行該爐管內之壓力,並持續量測一低壓觀測時間,以取得一低度壓力變化資訊;
  S3:調整該爐管內之壓力至一中壓狀態,該中壓狀態之氣體壓力介於標準大氣壓與該低壓狀態之氣體壓力之間;
  S4:於該中壓狀態進行壓力量測一中壓觀測時間,以取得一中度壓力變化資訊;及
  S5:讀取該低度壓力變化資訊以及該中度壓力變化資訊以判斷該爐管內之漏氣狀況。
  除了上述之壓力測漏方法之外,亦可對調該低壓狀態以及該中壓狀態之量測順序,亦即,先進行該中壓狀態之檢測而取得該中度壓力變化資訊,再進行該低壓狀態之檢測,以取得該低度壓力變化資訊,最後同樣藉由該中度壓力變化資訊以及該低度壓力變化資訊判斷是否有漏氣狀況的產生。
  由上述說明可知,本發明藉由該低壓狀態時所取得之低度壓力變化資訊判斷於低壓狀態時之漏氣狀況,並且利用該中壓狀態時所取得之中度壓力變化資訊更進一步的作為辨識該爐管是否有漏氣狀態的發生。因而可有效判斷爐管是否有漏壓狀況的發生,進而排除因製程環境不良而造成產品良率低之問題。
The main object of the present invention is to solve the problem that the bottom pressure leak detection method cannot effectively find the elastic ring damage or the elastic ring setting is incorrect.
To achieve the above object, the present invention provides a pressure leak detection method for a semiconductor process furnace tube, which comprises the following steps:
S1: sealing at least one output inlet of a furnace tube, and pumping to a low pressure state by a pump connected to the furnace tube, the gas pressure of the low pressure state is less than a standard atmospheric pressure;
S2: performing pressure in the furnace tube in the low pressure state, and continuously measuring a low pressure observation time to obtain a low pressure change information;
S3: adjusting the pressure in the furnace tube to a medium pressure state, wherein the medium pressure state gas pressure is between the standard atmospheric pressure and the gas pressure of the low pressure state;
S4: performing pressure measurement in the medium pressure state to obtain a medium pressure change information; and S5: reading the low pressure change information and the moderate pressure change information to determine the inside of the furnace tube The leaking condition.
In addition to the pressure leak detection method described above, the measurement sequence of the low pressure state and the medium pressure state may be adjusted, that is, the medium pressure state detection is first performed to obtain the medium pressure change information, and then the low pressure is performed. The state is detected to obtain the low pressure change information, and finally, the moderate pressure change information and the low pressure change information are also used to determine whether there is a gas leak condition.
As apparent from the above description, the present invention determines the air leakage state at the time of the low pressure state by the low pressure change information obtained in the low pressure state, and further obtains the medium pressure change information obtained by using the medium pressure state. Identify whether the furnace tube has a leak condition. Therefore, it is possible to effectively judge whether or not the furnace tube has a leak pressure condition, thereby eliminating the problem of low product yield due to poor process environment.

  有關本發明之詳細說明及技術內容,現就配合圖式說明如下:
  請參閱「圖3」、「圖4」及「圖5」所示,本發明係為一種半導體製程爐管之壓力測漏方法,包含有以下步驟:
  S1:封閉一爐管10之至少一輸出入口11,本發明所稱之爐管10包含有高溫爐管、擴散爐管及退火爐管等,僅要利用不同壓力之控制以進行生產製造的腔體結構,特別是需要進行真空操作的腔體結構。其操作條件包含壓力以及溫度的調整,並且,可配合摻雜氣體的輸入,而對一基材進行離子的摻雜及擴散。因而一輸氣管體20係與該輸出入口11連接,以進行氣體的輸入或抽出,於本實施例中,該輸氣管體20之外徑小於該輸出入口11之內徑。而由於該輸氣管體20以及該輸出入口11之材質大多為硬質材料,使得該輸氣管體20與該輸出入口11之間於接合時大多會形成一間隙12,造成漏氣問題。為了排除此一問題,其係設置一彈性環30於該輸氣管體20之外表面,進而於連接該輸出入口11時,封閉該間隙12,以避免可能發生的漏氣問題。為了檢查是否密合,其利用一與該爐管10連通的幫浦40進行抽氣至一低壓狀態51,該低壓狀態51之氣體壓力小於標準大氣壓,更進一步說明,該低壓狀態51之壓力小於100托耳(Torr)。
 
  S2:進行第一次壓力量測,於該低壓狀態51進行該爐管10內之壓力量測,並持續一低壓觀測時間61,以取得一低度壓力變化資訊,該低度壓力變化資訊為壓力與時間的變化資訊。其中,該低壓觀測時間61可介於30秒至15分鐘,其係根據各個機台及需求不同而可進行時間的調整。
  S3:調整該爐管10內之壓力至一中壓狀態52,該中壓狀態52之氣體壓力介於標準大氣壓與該低壓狀態51之氣體壓力之間,更進一步說明,該中壓狀態52之壓力介於200~600托耳,請配合參閱「圖6」所示,其係包含有一正常壓力曲線71以及一壓力洩漏曲線72,該正常壓力曲線71不論該爐管10內之壓力變化如何,皆不會影響其曲線變化,而觀察該壓力洩漏曲線72,由該爐管10內之氣體壓力從200托耳開始便開始有明顯的洩漏現象,於500托耳左右時達到頂峰,而於650托耳時大約下降至低點。由於低壓時,爐管10內之氣體壓力遠小於外界氣體壓力,因爐管10內外之壓力差異大,使得設置於該間隙12上的彈性環30會緊密的吸附於該間隙12,此時,即便該彈性環30並未定位正確,或者該彈性環30已經損毀,仍然會由於該爐管10內的強大吸引力而被緊密的吸附於該間隙12,因而無法觀察到洩漏的狀況。而當爐管10內的氣體壓力逐漸上升時,該彈性環30所受到的吸引力較小,而漸漸鬆開與該間隙12的吸附狀態,若該彈性環30定位不正確或該彈性環30已損毀,在此時便可較為容易的觀察到氣體洩漏的狀況。若控制該爐管10內的氣體壓力不斷上升至超過650托耳,則因為爐管10內之氣體壓力與外界之氣體壓力差異甚小,因而無法觀察到明顯的洩漏現象。
  S4:進行第二次壓力量測,於該中壓狀態52進行壓力量測,並持續一中壓觀測時間62,以取得一中度壓力變化資訊,其中,該中壓觀測時間62包含有一穩定時間621以及一檢測時間622,而該穩定時間621可介於5~10分鐘。於該穩定時間621時,由於剛把爐管10內之壓力調整至中壓狀態52,尚未穩定,因而有可能造成壓力值的震盪,藉由該穩定時間621之設置,穩定該爐管10內之氣體壓力,而後於該檢測時間622再進行氣體壓力的檢測而取得該中度壓力變化資訊。
  S5:讀取該低度壓力變化資訊以及該中度壓力變化資訊以判斷該爐管10內之漏氣狀況,若該低度壓力變化資訊以及該中度壓力變化資訊均顯示該爐管10內之壓力未有明顯變化,則表示該爐管10無洩漏問題的發生。但若該低度壓力變化資訊或該中度壓力變化資訊顯示該爐管10之壓力具有明顯變化時,則表示該爐管10有可能發生洩漏問題,需要更進一步的檢視。其中,若該低度壓力變化資訊顯示該爐管10內之壓力發生上升之現象,則表示該爐管10有氣體洩漏的問題發生;若該低度壓力變化資訊顯示正常,而該中度壓力變化資訊顯示該爐管10內之壓力發生上升現象時,則表示於低壓狀態51時,該彈性環30因被該間隙12吸附而未產生洩漏的問題,但於中壓狀態52時,則因為彈性環30較為鬆開於該間隙12上的吸附,因而該彈性環30未定位正確或彈性環30損毀將會造成氣體由該輸出入口11洩漏,而發生氣體上升的狀況;再者,若該低度壓力變化資訊顯示正常,而該中度壓力變化資訊顯示該爐管10內之壓力發生下降現象時,則有可能是因為幫浦40之一主閥門41產生粉塵壓縮阻斷(Powder Condense)之狀況而使該爐管10內過度抽氣產生壓力下降的問題。而粉塵壓縮阻斷係由於製程之生成物附著於該主閥門41而使得該主閥門41無法完全閉合,而讓該幫浦40持續對該爐管10進行抽氣之現象。藉由此觀察,可一併檢視幫浦40以及該主閥門41之操作狀況及閥門運作狀況。
  需特別注意的是,本發明之該低壓狀態51以及該中壓狀態52之檢測並無特別順序性,亦即,可如前實施例先進行低壓狀態51之檢測,而後再進行中壓狀態52之檢測。或如接下來的實施例說明,先進行中壓狀態52之檢測,再進行該低壓狀態51之檢測。詳細步驟如下:
  S1a:封閉一爐管10之至少一輸出入口11,並利用一與該爐管10連通的幫浦40進行抽氣至一中壓狀態52,該中壓狀態52之氣體壓力小於標準大氣壓,較佳地,該中壓狀態52之壓力介於200~600托耳之間,其中,至少一與該爐管10連通的輸氣管體20係透過一彈性環30而密封連接於該輸出入口11。
  S2a:於該中壓狀態52進行該爐管10內之壓力量測,並持續一中壓觀測時間62,以取得一中度壓力變化資訊,其中,該中壓觀測時間62包含有一穩定時間621以及一檢測時間622,且較佳地,該穩定時間介於5~10分鐘。
  S3a:調整該爐管10內之壓力至一低壓狀態51,該低壓狀態51之氣體壓力介於該中壓狀態52之氣體壓力與真空之間,較佳地,該低壓狀態51之壓力小於100托耳。
  S4a:於該低壓狀態51進行壓力量測,並持續一低壓觀測時間61,以取得一低度壓力變化資訊;及
  S5a:讀取該中度壓力變化資訊以及該低度壓力變化資訊以判斷該爐管10內之漏氣狀況。
  綜上所述,由於本發明藉由該低壓狀態51時所取得之低度壓力變化資訊判斷於低壓狀態51時之漏氣狀況,並且利用該中壓狀態52時所取得之中度壓力變化資訊是否有壓力上升的狀況以判斷漏氣問題的發生與否,進而排除因製程環境不良而造成產品良率低之問題。除此之外,更藉由判斷該中度壓力變化資訊所顯示的壓力是否有壓力下降的狀況以判斷該主閥門41之動作是否正常。因此本發明極具進步性及符合申請發明專利之要件,爰依法提出申請,祈 鈞局早日賜准專利,實感德便。
  以上已將本發明做一詳細說明,惟以上所述者,僅爲本發明之一較佳實施例而已,當不能限定本發明實施之範圍。即凡依本發明申請範圍所作之均等變化與修飾等,皆應仍屬本發明之專利涵蓋範圍內。
The detailed description and technical contents of the present invention will now be described as follows:
Referring to FIG. 3, FIG. 4 and FIG. 5, the present invention is a pressure leak detection method for a semiconductor process furnace tube, which comprises the following steps:
S1: sealing at least one output inlet 11 of a furnace tube 10, which is referred to as a high temperature furnace tube, a diffusion furnace tube, an annealing furnace tube, etc., and only uses a control of different pressures to manufacture a cavity. Body structure, especially cavity structures that require vacuum operation. The operating conditions include pressure and temperature adjustment, and ion doping and diffusion of a substrate can be performed in conjunction with the input of the dopant gas. Therefore, a gas pipe body 20 is connected to the output inlet 11 for gas input or extraction. In the present embodiment, the outer diameter of the gas pipe body 20 is smaller than the inner diameter of the output port 11. Since the material of the gas pipe body 20 and the output inlet 11 is mostly a hard material, a gap 12 is often formed between the gas pipe body 20 and the output inlet 11 at the time of joining, causing a gas leakage problem. In order to eliminate this problem, an elastic ring 30 is disposed on the outer surface of the gas pipe body 20, and when the output inlet 11 is connected, the gap 12 is closed to avoid a gas leakage problem that may occur. In order to check whether it is tight, it is pumped to a low pressure state 51 by a pump 40 connected to the furnace tube 10. The gas pressure of the low pressure state 51 is less than the standard atmospheric pressure, further indicating that the pressure of the low pressure state 51 is less than 100 Torr.

S2: performing a first pressure measurement, performing pressure measurement in the furnace tube 10 in the low pressure state 51, and continuing a low pressure observation time 61 to obtain a low pressure change information, wherein the low pressure change information is Information on changes in pressure and time. The low-pressure observation time 61 can be between 30 seconds and 15 minutes, and the time can be adjusted according to different machines and requirements.
S3: adjusting the pressure in the furnace tube 10 to an intermediate pressure state 52, wherein the gas pressure in the medium pressure state 52 is between the standard atmospheric pressure and the gas pressure of the low pressure state 51, further illustrating that the medium pressure state 52 The pressure is between 200 and 600 Torr. Please refer to FIG. 6 for a normal pressure curve 71 and a pressure leakage curve 72. The normal pressure curve 71 varies regardless of the pressure in the tube 10. It does not affect the curve change, and the pressure leak curve 72 is observed. The gas pressure in the furnace tube 10 starts to have a significant leakage phenomenon from 200 Torr, reaching a peak at about 500 Torr, and at 650. When the ear is about to drop to a low point. Since the pressure of the gas in the furnace tube 10 is much smaller than the pressure of the outside air due to the low pressure, the pressure difference between the inside and the outside of the furnace tube 10 is large, so that the elastic ring 30 disposed on the gap 12 is closely adsorbed to the gap 12, at this time, Even if the elastic ring 30 is not positioned correctly, or the elastic ring 30 has been damaged, it is tightly adsorbed to the gap 12 due to the strong attraction force in the furnace tube 10, so that a leak condition cannot be observed. When the gas pressure in the furnace tube 10 gradually rises, the elastic ring 30 receives less attractive force, and gradually releases the adsorption state with the gap 12, if the elastic ring 30 is not positioned correctly or the elastic ring 30 It has been destroyed and it is easier to observe the situation of gas leakage at this time. If the pressure of the gas in the furnace tube 10 is controlled to rise continuously to more than 650 Torr, since the difference between the gas pressure in the furnace tube 10 and the external gas pressure is small, a significant leakage phenomenon cannot be observed.
S4: performing a second pressure measurement, performing pressure measurement in the medium pressure state 52, and continuing an intermediate pressure observation time 62 to obtain a moderate pressure change information, wherein the medium pressure observation time 62 includes a stable Time 621 and a detection time 622, and the stabilization time 621 can be between 5 and 10 minutes. At the time of the stabilization time 621, since the pressure in the furnace tube 10 has just been adjusted to the medium pressure state 52, it has not been stabilized, so that the pressure value may be oscillated, and the setting of the stabilization time 621 stabilizes the inside of the furnace tube 10. The gas pressure is then detected at the detection time 622 to obtain the medium pressure change information.
S5: reading the low pressure change information and the moderate pressure change information to determine the air leakage condition in the furnace tube 10, if the low pressure change information and the moderate pressure change information are displayed in the furnace tube 10 The pressure does not change significantly, indicating that the furnace tube 10 has no leakage problems. However, if the low pressure change information or the moderate pressure change information indicates that the pressure of the furnace tube 10 has a significant change, it indicates that the furnace tube 10 may have a leakage problem, and further inspection is required. Wherein, if the low pressure change information indicates that the pressure in the furnace tube 10 rises, it indicates that the furnace tube 10 has a gas leakage problem; if the low pressure change information shows normal, the medium pressure When the change information indicates that the pressure in the furnace tube 10 has risen, it indicates that the elastic ring 30 is not adsorbed by the gap 12 when the low pressure state 51 is present, but in the medium pressure state 52, The elastic ring 30 is loosened by the adsorption on the gap 12, so that the elastic ring 30 is not positioned correctly or the elastic ring 30 is damaged, which will cause gas to leak from the output inlet 11 and a gas rise condition occurs; The low pressure change information shows normal, and the moderate pressure change information indicates that the pressure in the furnace tube 10 is degraded, it may be because one of the main valves 41 of the pump 40 generates a dust compression block (Powder Condense). In this case, excessive pumping in the furnace tube 10 causes a problem of pressure drop. The dust compression blockage causes the main valve 41 to be completely closed because the product of the process adheres to the main valve 41, and the pump 40 continues to pump the furnace tube 10. By this observation, the operation state of the pump 40 and the main valve 41 and the operation state of the valve can be checked together.
It should be particularly noted that the detection of the low pressure state 51 and the medium pressure state 52 of the present invention is not particularly sequential, that is, the low pressure state 51 can be detected as in the previous embodiment, and then the medium pressure state 52 is performed. Detection. Or, as explained in the following embodiments, the detection of the medium pressure state 52 is performed first, and the detection of the low pressure state 51 is performed. The detailed steps are as follows:
S1a: closing at least one output inlet 11 of a furnace tube 10, and pumping to a medium pressure state 52 by a pump 40 connected to the furnace tube 10, the gas pressure of the medium pressure state 52 is less than the standard atmospheric pressure, Preferably, the pressure in the medium pressure state 52 is between 200 and 600 Torr, wherein at least one gas pipe body 20 communicating with the furnace tube 10 is sealingly connected to the output inlet 11 through an elastic ring 30.
S2a: performing pressure measurement in the furnace tube 10 in the medium pressure state 52, and continuing an intermediate pressure observation time 62 to obtain a moderate pressure change information, wherein the medium pressure observation time 62 includes a stabilization time 621 And a detection time 622, and preferably, the stabilization time is between 5 and 10 minutes.
S3a: adjusting the pressure in the furnace tube 10 to a low pressure state 51, wherein the gas pressure of the low pressure state 51 is between the gas pressure and the vacuum of the medium pressure state 52. Preferably, the pressure of the low pressure state 51 is less than 100. Thor.
S4a: performing pressure measurement in the low pressure state 51 and continuing a low pressure observation time 61 to obtain a low pressure change information; and S5a: reading the medium pressure change information and the low pressure change information to determine the The air leakage condition in the furnace tube 10.
In summary, the present invention determines the air leakage condition in the low pressure state 51 by the low pressure change information obtained when the low pressure state 51 is obtained, and obtains the medium pressure change information when the medium pressure state 52 is utilized. Whether there is a situation of pressure rise to judge whether the gas leakage problem occurs or not, thereby eliminating the problem of low product yield due to poor process environment. In addition to this, it is judged whether or not the action of the main valve 41 is normal by judging whether or not the pressure indicated by the moderate pressure change information has a pressure drop. Therefore, the present invention is highly progressive and conforms to the requirements of the invention patent application, and the application is made according to law, and the praying office grants the patent as soon as possible.
The present invention has been described in detail above, but the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the scope of the invention. That is, the equivalent changes and modifications made by the scope of the present application should remain within the scope of the patent of the present invention.

習知技術Conventional technology

1...爐管1. . . Furnace tube

2...輸氣管體2. . . Gas pipeline body

3...輸出入口3. . . Output entry

4...幫浦4. . . Pump

5...彈性環5. . . Elastic ring

6...間隙6. . . gap

本發明this invention

10...爐管10. . . Furnace tube

11...輸出入口11. . . Output entry

12...間隙12. . . gap

20...輸氣管體20. . . Gas pipeline body

30...彈性環30. . . Elastic ring

40...幫浦40. . . Pump

51...低壓狀態51. . . Low pressure state

52...中壓狀態52. . . Medium pressure state

61...低壓觀測時間61. . . Low pressure observation time

62...中壓觀測時間62. . . Medium pressure observation time

621...穩定時間621. . . stable schedule

622...檢測時間622. . . Detection time

71...正常壓力曲線71. . . Normal pressure curve

72...壓力洩漏曲線72. . . Pressure leak curve

圖1,為習知技術之半導體製程之爐管結構示意圖。FIG. 1 is a schematic view showing the structure of a furnace tube of a semiconductor process of the prior art.

圖2,為圖1之部分剖面放大示意圖。Figure 2 is an enlarged cross-sectional view of a portion of Figure 1.

圖3,為本發明之半導體製程之爐管結構示意圖。3 is a schematic view showing the structure of a furnace tube of a semiconductor process according to the present invention.

圖4,為圖3之部分剖面放大示意圖。Figure 4 is an enlarged cross-sectional view of a portion of Figure 3.

圖5,為本發明之壓力操作示意圖。Figure 5 is a schematic view of the pressure operation of the present invention.

圖6,為本發明之不同壓力之漏氣比較示意圖。Fig. 6 is a schematic view showing comparison of air leakage at different pressures according to the present invention.

51...低壓狀態51. . . Low pressure state

52...中壓狀態52. . . Medium pressure state

61...第一觀測時間低壓觀測時間61. . . First observation time low-pressure observation time

62...第二觀測時間中壓觀測時間62. . . Second observation time medium pressure observation time

621...穩定時間621. . . stable schedule

622...檢測時間622. . . Detection time

Claims (12)

一種半導體製程爐管之壓力測漏方法,包含有以下步驟:
S1:封閉一爐管之至少一輸出入口,並利用一與該爐管連通的幫浦進行抽氣至一低壓狀態,該低壓狀態之氣體壓力小於標準大氣壓;
S2:於該低壓狀態進行該爐管內之壓力量測,並持續一低壓觀測時間,以取得一低度壓力變化資訊;
S3:調整該爐管內之壓力至一中壓狀態,該中壓狀態之氣體壓力介於標準大氣壓與該低壓狀態之氣體壓力之間;
S4:於該中壓狀態進行壓力量測,並持續一中壓觀測時間,以取得一中度壓力變化資訊;及
S5:讀取該低度壓力變化資訊以及該中度壓力變化資訊以判斷該爐管內之漏氣狀況。
A pressure leak detection method for a semiconductor process furnace tube, comprising the following steps:
S1: sealing at least one output inlet of a furnace tube, and pumping to a low pressure state by a pump connected to the furnace tube, the gas pressure of the low pressure state is less than a standard atmospheric pressure;
S2: performing pressure measurement in the furnace tube in the low pressure state, and continuing a low pressure observation time to obtain a low pressure change information;
S3: adjusting the pressure in the furnace tube to a medium pressure state, wherein the medium pressure state gas pressure is between the standard atmospheric pressure and the gas pressure of the low pressure state;
S4: performing pressure measurement in the medium pressure state and continuing the medium pressure observation time to obtain a moderate pressure change information;
S5: reading the low pressure change information and the moderate pressure change information to determine a leak condition in the furnace tube.
如申請專利範圍第1項所述之半導體製程爐管之壓力測漏方法,其中該低壓狀態之壓力小於100托耳。The pressure leakage method for a semiconductor process tube according to claim 1, wherein the pressure in the low pressure state is less than 100 Torr. 如申請專利範圍第1項所述之半導體製程爐管之壓力測漏方法,其中該中壓狀態之壓力介於200~600托耳。The pressure leakage method for a semiconductor process tube according to claim 1, wherein the pressure in the medium pressure state is between 200 and 600 Torr. 如申請專利範圍第1項所述之半導體製程爐管之壓力測漏方法,其中於步驟S1中,至少一與該爐管連通的輸氣管體係透過一彈性環而密封連接於該輸出入口。The pressure leakage method of the semiconductor process tube according to claim 1, wherein in the step S1, at least one gas pipeline system communicating with the furnace tube is sealingly connected to the output inlet through an elastic ring. 如申請專利範圍第1項所述之半導體製程爐管之壓力測漏方法,其中於步驟S4中,該中壓觀測時間包含有一穩定時間以及一檢測時間。The pressure leak detection method for a semiconductor process tube according to claim 1, wherein in the step S4, the medium pressure observation time includes a stabilization time and a detection time. 如申請專利範圍第5項所述之半導體製程爐管之壓力測漏方法,其中該穩定時間介於5~10分鐘。The method for pressure leakage of a semiconductor process tube according to claim 5, wherein the stabilization time is between 5 and 10 minutes. 一種半導體製程爐管之壓力測漏方法,包含有以下步驟:
S1:封閉一爐管之至少一輸出入口,並利用一與該爐管連通的幫浦進行抽氣至一中壓狀態,該中壓狀態之氣體壓力小於標準大氣壓;
S2:於該中壓狀態進行該爐管內之壓力量測,並持續一中壓觀測時間,以取得一中度壓力變化資訊;
S3:調整該爐管內之壓力至一低壓狀態,該低壓狀態之氣體壓力介於該中壓狀態之氣體壓力與真空之間;
S4:於該低壓狀態進行壓力量測,並持續一低壓觀測時間,以取得一低度壓力變化資訊;及
S5:讀取該中度壓力變化資訊以及該低度壓力變化資訊以判斷該爐管內之漏氣狀況。
A pressure leak detection method for a semiconductor process furnace tube, comprising the following steps:
S1: closing at least one output inlet of a furnace tube, and pumping to a medium pressure state by using a pump connected to the furnace tube, wherein the medium pressure state gas pressure is less than a standard atmospheric pressure;
S2: performing pressure measurement in the furnace tube in the medium pressure state, and continuing an intermediate pressure observation time to obtain a moderate pressure change information;
S3: adjusting the pressure in the furnace tube to a low pressure state, wherein the gas pressure in the low pressure state is between the gas pressure and the vacuum in the medium pressure state;
S4: performing pressure measurement in the low pressure state and continuing a low pressure observation time to obtain a low pressure change information; and
S5: Reading the moderate pressure change information and the low pressure change information to determine the air leakage condition in the furnace tube.
如申請專利範圍第7項所述之半導體製程爐管之壓力測漏方法,其中該中壓狀態之壓力介於200~600托耳。The pressure leakage method for a semiconductor process tube according to claim 7, wherein the pressure in the medium pressure state is between 200 and 600 Torr. 如申請專利範圍第7項所述之半導體製程爐管之壓力測漏方法,其中該低壓狀態之壓力小於100托耳。The pressure leakage method of the semiconductor process tube according to claim 7, wherein the pressure in the low pressure state is less than 100 Torr. 如申請專利範圍第7項所述之半導體製程爐管之壓力測漏方法,其中於步驟S1中,至少一與該爐管連通的輸氣管體係透過一彈性環而密封連接於該輸出入口。The pressure leakage method of the semiconductor process tube according to claim 7, wherein in the step S1, at least one gas pipeline system communicating with the furnace tube is sealed and connected to the output inlet through an elastic ring. 如申請專利範圍第7項所述之半導體製程爐管之壓力測漏方法,其中於步驟S2中,該中壓觀測時間包含有一穩定時間以及一檢測時間。The pressure leak detection method of the semiconductor process tube according to claim 7, wherein in the step S2, the medium pressure observation time includes a stabilization time and a detection time. 如申請專利範圍第11項所述之半導體製程爐管之壓力測漏方法,其中該穩定時間介於5~10分鐘。The method for pressure leakage of a semiconductor process tube according to claim 11, wherein the stabilization time is between 5 and 10 minutes.
TW101100280A 2012-01-04 2012-01-04 Pressure leakage detection method for furnace tube of semiconductor manufacturing TW201330107A (en)

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