TW201329191A - 用於半導體的黏著劑組成物、黏著劑膜以及製造半導體元件的方法 - Google Patents

用於半導體的黏著劑組成物、黏著劑膜以及製造半導體元件的方法 Download PDF

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Publication number
TW201329191A
TW201329191A TW101145667A TW101145667A TW201329191A TW 201329191 A TW201329191 A TW 201329191A TW 101145667 A TW101145667 A TW 101145667A TW 101145667 A TW101145667 A TW 101145667A TW 201329191 A TW201329191 A TW 201329191A
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Taiwan
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group
weight
curing
adhesive film
semiconductor
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TW101145667A
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English (en)
Inventor
Sang-Jin Kim
Kyoung-Tae Wi
Jae-Won Choi
Sang-Kyun Kim
Cheol-Su Kim
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Cheil Ind Inc
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Publication of TW201329191A publication Critical patent/TW201329191A/zh

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    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/50—Amines
    • C08G59/5033—Amines aromatic
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    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
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    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
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    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
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Abstract

本發明係有關於一種用於半導體的黏著劑組成物。以用於半導體的黏著劑膜之總固體含量為基準，黏著劑膜含有60重量%至80重量%之一熱塑性樹脂、一酚固化劑，及一胺固化劑，且於150℃固化20分鐘後，具有2 MPa或更多之貯存模量及50%或更多之反應固化率。使用此黏著劑組成物製備之用於半導體的黏著劑膜及製造半導體元件之方法亦被揭露。

Description

用於半導體的黏著劑組成物、黏著劑膜以及製造半導體元件的方法 發明領域
本發明係有關於用於半導體之一黏著劑組成物，及包含此黏著劑組成物之一黏著劑膜。更特別地，本發明係有關於用於半導體之一黏著劑膜，以用於半導體之此黏著劑膜之總固體含量為基準，係包含60至80重量%(wt%)之一熱塑性樹脂，一酚固化劑，及一胺固化劑，且於150℃固化20分鐘後，具有2 MPa或更多之貯存模量及50%或更多之反應固化率。
相關技藝說明
雖然銀膠(silver paste)一般已被用於使半導體元件彼此附接或與一支撐元件附接，但隨著漸增之半導體元件之尺寸減小及高容量的趨勢，支撐元件亦需具有小尺寸及緊密組態。銀膠具有因半導體元件突起或有斜度而造成之引線接合失效、氣泡產生、厚度控制困難等之問題。因此，近年來有使用黏著劑膜替代銀膠的趨勢。
用於組合半導體的黏著劑膜通常係與切割膜一起使用，其係指於一系列之半導體晶片製造方法之切割時固持半導體晶圓之膜。切割係將半導體晶圓切成個別晶片之方法，其後係擴張方法、拾取方法等。
切割時，自一切割膜移除之一PET覆蓋膜係堆疊於一黏著劑膜上，形成作為用於組合半導體的黏著劑的單一膜，且一半導體晶圓係置於此膜上，其後使用一圓形鑽石刀片鋸切。近年來，雷射光束被輻射至一半導體晶圓以選擇性地切割此半導體晶圓之一內部，其後使此膜擴張，及將此晶圓與黏著劑膜一起切割，藉此，提供個別化之半導體晶片。
於最近之使用一切割用之晶粒接合黏著劑膜組合半導體之半導體組合方法，一黏著劑膜係與一切割膜於50~80℃一起安裝於其上具有電路之一半導體晶圓上，其後，將半導體晶圓切成個別晶片，其等係轉而經由一晶粒附接方法於高溫彼此堆疊。
因為用於製造半導體元件之電路板由於佈線而具有不規則表面，黏著劑層需要展現流動性，以便降低於藉由在高溫實施之晶粒附接方法將半導體晶片堆疊於電路板上時產生的起始孔隙之尺寸。此時，此等孔隙需於半導體晶圓堆疊後於高溫及高壓下以環氧模製方法完全移除。模製方法後剩餘之孔隙會造成可靠度惡化。
為了固持堆疊於此膜上之晶片，此膜接受於125~170℃之預固化或半固化一段預定時間，其後進行環氧 模製，及於175℃進行模製後固化1~2小時以使經模製之EMC樹脂及黏著劑膜固化。此處，半固化係於125~170℃實施約40~70分鐘，以固化此黏著劑膜，且因為半導體二極體之數量由於半導體二極體之高積體化而增加，半導體組合時間增加，因此，降低生產力。
韓國專利第1033045號案揭示一種用於半導體的黏著劑組成物，其包含一聚合物結合劑樹脂、一環氧樹脂、一酚固化固化劑、一固化催化劑、一矽烷偶合劑，及無機填料。此專利試圖抑制切割時之毛邊產生及使用酚環氧固化劑引線接合時之孔隙產生，其係以於150℃固化1小時或於175℃固化2小時之長固化期為基礎，因此，使其難以降低處理時間。
發明概要
本發明之一方面係提供一種用於半導體的黏著劑膜，其能有效降低處理時間，且無可靠度惡化，即使於半導體封裝省略用於使堆疊於黏著劑膜上之晶片牢固之半固化方法(於125℃至170℃持續1分鐘至60分鐘)之情況經過引線接合之熱歷史。
本發明之另一方面係提供一種用於半導體的黏著劑膜，其能於半導體封裝降低環氧模製方法或省略模製後之固化方法，且未遭受可靠度惡化，即使以引線接合之熱歷史，藉此，能有效降低處理時間。
本發明之另一方面係提供一種用於半導體的黏 著劑組成物，及包含此組成物之一黏著劑膜，其能藉由提供一剩餘固化率於EMC模製時有效移除孔隙，即使於晶粒附接後之各種固化方法後。
依據本發明之一方面，一種用於半導體的黏著劑膜，以用於半導體之此黏著劑膜的總固體含量為基準，係包括60重量%至80重量%之一熱塑性樹脂、一酚固化劑，及一胺固化劑，且於150℃固化20分鐘後，具有2 MPa或更多之貯存模量及50%或更多之反應固化率。
依據本發明之黏著劑組成物或膜提供一快速固化率，即使於晶片接合後降低及/或省略半固化之情況，藉此，避免因不足之加熱而造成可靠度惡化，且能有效降低處理時間。
此外，依據本發明之用於半導體的黏著劑組成物能降低及/或省略於晶片結合後之半固化方法及/或PMC方法，能降低環氧模製方法，及無論降低或省略此等方法，能滿足半導體結合之加工性及可靠度二者。
依據本發明之用於半導體的黏著劑組成物形成一足夠交聯之結構，即使以晶粒附接方法(於120℃持續1至10分鐘)及引線接合方法(於150℃持續約20分鐘)之不足夠加熱歷史，藉此，有效避免藉由因不足夠固化使組成物發泡而造成之失效或不足之黏著造成之可靠度惡化。
當孔隙於PCB產生時，依據本發明之黏著劑膜或半導體可藉由於環氧模製(EMC模製)時有效移除孔隙而改良孔隙及可靠度特性。
發明詳細說明
本發明之實施例現將詳細說明。需瞭解下列實施例僅係提供作為例示說明，且不以任何方式被作為限制本發明而闡釋。
除非其它特定外，於整份說明書，每一組份之量係關於固體含量而言。
於一方面，本發明提供一種用於半導體的黏著劑膜，以用於半導體的此黏著劑膜之總固體含量為基準，包含60重量%至80重量%之一熱塑性樹脂、一酚固化劑，及一胺固化劑，且於150℃固化20分鐘後，具有2 MPa或更多之貯存模量及50%或更多之反應固化率。
於此方面，當組成物包含60重量%至80重量%之熱塑性樹脂，當孔隙於晶粒附接方法期間於PCB產生時，其可於EMC模製時達成有效移除孔隙。若熱塑性樹脂之量少於60重量%，於晶粒附接方法期間產生之孔隙於EMC模製時會不足地被移除。
於此方面，依據本發明之用於半導體的此黏著劑組成物包含酚固化劑及胺固化劑二者。以此方式，本發明之黏著劑組成物進一步包含添加至含有一環氧樹脂及一胺固化劑之傳統固化系統的酚固化劑，且因而經由酚固化劑之酸促進形成一足夠交聯之結構，即使以晶粒附接方法(於 120℃持續數分鐘)及引線接合方法(於150℃持續約20分鐘)之不足夠加熱歷史，藉此，有效避免藉由因不足夠固化使組成物發泡而造成之失效或不足之黏著造成之可靠度惡化。
雖然此項技藝已知之任何酚固化劑可不受限地使用，但可使用於單一分子含有二或更多個酚羥基基團且於水解時展現優異耐電解腐蝕性之雙酚樹脂，諸如，雙酚A、雙酚F、雙酚S等；酚醛清漆樹脂；雙酚A清漆樹脂；及酚樹脂，諸如，二甲苯、甲酚酚醛清漆、聯苯樹脂等。
以固化率調整而言，適用於本發明黏著劑組成物之胺固化劑可為一芳香族二胺固化劑。例如，胺固化劑可為至少一選自以下列化學式1至5表示之化合物的胺化合物，但不限於此等。
其中，A係一單鍵或係選自由-CH2-、-CH2CH2-、-SO2-、-NHCO-、-C(CH3)2-，及-O-所構成之族群；且R1至R10每一者獨立地係氫、一C1-C4烷基基團、一C1-C4烷氧基基團，及胺基團，附帶條件係R1至R10包含至少一胺基團。
其中，R11至R18包含至少一胺基團，且每一者獨立地係氫、一C1至C4烷基基團、一烷氧基基團、一羥基基團、一氰化物基團，或鹵素。
其中，Z1係氫、一C1至C4烷基基團、一烷氧基基團，或一羥基基團；R19至R33包含至少一胺基團，且每一者獨立地係氫、一C1至C4烷基基團、一烷氧基基團、一羥基基團、一氰化物基團，或鹵素。
其中，R34至R41包含至少一胺基團，且每一者獨立地係 氫、一C1至C4烷基基團、一烷氧基基團、一羥基基團、一氰化物基團，或鹵素。
其中，X3係選自由-CH2-、-NH-、-SO2-、-S-，及-O-所構成族群之一者；且R42至R49包含至少一胺基團，且每一者獨立地係氫、一C1至C4烷基基團、一烷氧基基團、一羥基基團、一氰化物基團，或鹵素。
於此方面，酚固化劑對胺固化劑之重量比率範圍可為從3：1至1：11，較佳係從2：1至1：5。
於此方面，依據本發明之黏著劑膜於150℃固化20分鐘後具有2 MPa或更多之貯存模量及50%或更多之反應固化率。於150℃固化20分鐘後之2 MPa或更多之貯存模量及50%或更多之反應固化率的條件係與依據本發明之黏著劑膜的特徵有關，其於模擬引線接合方法之溫度及反應時間的條件下固化時，經由快速固化形成一足夠交聯結構，即使以不足夠熱歷史，藉此有效地避免藉由因不足夠固化使黏著劑膜發泡而造成之失效或不足之黏著造成之可靠度惡化。
於本發明中，“貯存模量”一辭係指以一黏著劑組成物塗覆時之一黏著劑膜於150℃固化20分鐘後，以4℃/ 分鐘之溫度增加速率從30℃加熱至260℃時，於150℃使用一動態機械分析器(DMA)測量時之貯存模量。考量包含熱塑性樹脂、環氧樹脂、固化劑等之黏著劑組成物之組份的比率，黏著劑膜於50℃固化20分鐘後可具有2 MPa至10 MPa之於150℃的貯存模量。
於本發明中，黏著劑膜之反應固化率係依據下列方程式計算。於此方程式中，固化前之熱量可使用差式掃瞄量熱術(DSC)藉由以10℃/分鐘之溫度增加速率從0至300℃掃瞄以黏著劑組成物塗覆之黏著劑膜樣本而測量，且固化後之熱量可於150℃之一熱板上固化20分鐘後測量。
反應固化率(%)=(1-(固化後之熱量)/(固化前之熱量))*100%
於此方面，依據本發明之用於半導體的黏著劑膜於150℃固化20分鐘及於175℃模製120秒後具有10%或更少之孔隙面積比率，較佳係7%或更少，更佳係5%或更少。為獲得此孔隙面積比率，於一側提供本發明之黏著劑膜之一晶片(黏著劑+晶片)(10mm x 10mm)係於120℃於1 kgf之荷重下持續1秒鐘附接至一經預熱的PCB，且於150℃之一熱板上固化20分鐘，其後於175℃進行EMC模製120秒。然後，模製樣品之一黏著劑層露出且使用一顯微鏡(25x放大率)照相，經由影像分析檢視孔隙之存在。為計算孔隙數量，使用柵格計數方法。特別地，總面積於縱向區分成10個柵格且於橫向區分成10個柵格，且含有孔隙之柵格數量被計數且轉換成百分率(%)(孔隙面積比率)。
孔隙面積比率=(孔隙面積/總面積)x 100%
依據本發明之用於半導體的黏著劑組成物或黏著劑膜可有利地作為用於晶粒與印刷電路板之黏著劑。
於此方面，依據本發明之用於半導體的黏著劑組成物或黏著劑膜可進一步包含一固化催化劑。固化催化劑可具有100℃至160℃之熔點。固化催化劑可為選自三聚氫胺催化劑、咪唑催化劑，及磷催化劑之至少一者。
於此方面，依據本發明之用於半導體的黏著劑組成物或黏著劑膜可進一步包含一矽烷偶合劑。
以固體含量而言，以組成物總量為基準，依據本發明之用於半導體的黏著劑組成物可包含60重量%至80重量%之一熱塑性樹脂，5重量%至30重量%之一環氧樹脂，0.5重量%至14重量%之一酚固化劑，1重量%至10重量%之一胺固化劑，0.1重量%至10重量%之一固化催化劑，0.14重量%至5重量%之一矽烷偶合劑，及1重量%至30重量%之一填料。
熱塑性樹脂(A)對一含有環氧樹脂(B)、酚固化劑(C)及胺固化劑(D)之一固化系統的重量比率，即，(A)：(B)+(C)+(D)，範圍可為從60至80：6.5至54。
於另一方面，本發明提供一種製造半導體元件之方法，其包含使用用於半導體之此黏著劑膜使一晶片與一佈線基材附接或使晶片彼此附接；使此等晶片或佈線基材引線接合；及使經引線接合之佈線基材環氧模製固化，其中，以用於半導體的黏著劑膜之總固體含量為基準，用於半導體之此黏著劑膜包含60重量%至80重量%之一熱塑性 樹脂、一酚固化劑，及一胺固化劑，且於150℃固化20分鐘後，具有2 MPa或更多之貯存模量及50%或更多之反應固化率。引線接合可於附接方面後連續地實施。於環氧模製固化時，用於半導體的黏著劑膜可被完全固化。於一實施例，附接於有關於PCB條材可於100℃至150℃實施1至10分鐘，引線接合可於140℃至160℃實施10至30分鐘，且環氧模製固化可於170℃至180℃實施1至5分鐘。
於另一實施例，附接可於120℃實施約5分鐘，引線接合可於150℃實施20分鐘，且環氧模製固化可於175℃實施約2分鐘。
於此方面，環氧模製固化可實施減少之反應時間。較佳地，環氧模製固化可於175℃實施2分鐘或更少，更佳係1分鐘或更少。
其次，用於半導體的黏著劑組成物之每一組份，諸如，熱塑性樹脂、環氧樹脂、酚固化樹脂、胺固化樹脂，及固化催化劑，將詳細說明。
熱塑性樹脂
適用於黏著劑組成物之熱塑性樹脂的例子可包括聚醯亞胺樹脂、聚苯乙烯樹脂、聚乙烯樹脂、聚酯樹脂、聚醯胺樹脂、丁二烯橡膠、丙烯系橡膠、(甲基)丙烯酸酯樹脂、胺甲酸酯樹脂、聚苯醚樹脂、聚醚醯亞胺樹脂、苯氧樹脂、聚碳酸酯樹脂、經改質之聚苯醚樹脂，及其等之混合物，且不限於此等。較佳地，熱塑性樹脂含有一環氧基團。於某些實施例，含有環氧基團之(甲基)丙烯系共聚物可 作為熱塑性樹脂。
熱塑性樹脂可具有-30℃至80℃，較佳係5℃至60℃，更佳係5℃至35℃之玻璃轉移溫度。於此範圍內，組成物可確保高流動性以展現優異之孔隙移除能力，且提供高黏著性及可靠度。
於某些實施例，熱塑性樹脂可具有50,000克/莫耳至5,000,000克/莫耳之重量平均分子量。
以固體含量而言，以組成物總量為基準，熱塑性樹脂可以60重量%至80重量%之量存在。於此範圍內，當孔隙於晶粒附接方法期間在PCB產生時，黏著劑組成物能有效移除於EMC模製期間有效移除孔隙。若熱塑性樹脂之量少於60重量%，係難以移除在晶粒附接方法期間於PCB產生之孔隙。
再者，熱塑性樹脂(A)對環氧樹脂(B)、酚固化劑(C)及胺固化劑(D)之混合物的重量比率，即，(A)：(B)+(C)+(D)，範圍可為從60至80：6.5至54。於此範圍內，孔隙產生可有利地被抑制。
環氧樹脂
環氧樹脂係可固化且用以賦予組成物黏著性。環氧樹脂可為液體環氧樹脂、固體環氧樹脂，或其等之混合物。
適合液體環氧樹脂之例子包括雙酚A型液體環氧樹脂、雙酚F型液體環氧樹脂、三或更多官能性之液體環氧樹脂、經橡膠改質之液體環氧樹脂、經胺甲酸酯改質之 液體環氧樹脂、經丙烯系改質之液體環氧樹脂s，及光敏性液體環氧樹脂。此等液體環氧樹脂可單獨或以其等之混合物使用。更佳地，使用雙酚A型液體環氧樹脂。
液體環氧樹脂可具有約100 g/eq.至約1500 g/eq.之環氧當量。液體環氧樹脂較佳係具有從約150 g/eq.至約800 g/eq.，更佳係從約150 g/eq.至約400 g/eq.之環氧當量。於此範圍內，可獲得具有良好黏著性及耐熱性同時維持玻璃轉移溫度之固化產物。
液體環氧樹脂具有範圍從100克/莫耳至1,000克/莫耳之重量平均分子量。以高流動性而言，此範圍係有利。
固體環氧樹脂可為於室溫係固體或半固體者，且具有一或多個官能基團。固體環氧樹脂可具有30℃至100℃之軟化點(Sp)。適合固體環氧樹脂之例子包括雙酚環氧樹脂、酚醛清漆環氧樹脂、鄰-甲酚酚醛清漆環氧樹脂、多官能性環氧樹脂、胺環氧樹脂、雜環環氧樹脂、經取代之環氧樹脂s、以萘酚為主之環氧樹脂、以聯苯為主之環氧樹脂，及其等之衍生物。
可購得之固體環氧樹脂包括下列。雙酚環氧樹脂之例子包括YD-017H、YD-020、YD020-L、YD-014、YD-014ER、YD-013K、YD-019K、YD-019、YD-017R、YD-017、YD-012、YD-011H、YD-011S、YD-011、YDF-2004、YDF-2001(Kukdo Chemical Co.,Ltd.)等。酚醛清漆環氧樹脂之例子包括EPIKOTE 152及EPIKOTE 154(Yuka Shell Epoxy Co.,Ltd.)；EPPN-201(Nippon Kayaku Co.,Ltd.)；DN-483(Dow Chemical Company)；YDPN-641、YDPN-638A80、YDPN-638、YDPN-637、YDPN-644、YDPN-631(Kukdo Chemical Co.,Ltd.)等。鄰-甲酚酚醛清漆環氧樹脂之例子包括：YDCN-500-1P、YDCN-500-2P、YDCN-500-4P、YDCN-500-5P、YDCN-500-7P、YDCN-500-8P、YDCN-500-10P、YDCN-500-80P、YDCN-500-80PCA60、YDCN-500-80PBC60、YDCN-500-90P、YDCN-500-90PA75(Kukdo Chemical Co.,Ltd.)；EOCN-102S、EOCN-103S、EOCN-104S、EOCN-1012、EOCN-1025、EOCN-1027(Nippon Kayaku Co.,Ltd.)；YDCN-701、YDCN-702、YDCN-703、YDCN-704(Tohto Kagaku Co.,Ltd.)；Epiclon N-665-EXP(Dainippon Ink and Chemicals,Inc.)等。雙酚清漆環氧樹脂之例子包括KBPN-110、KBPN-120、KBPN-115(Kukdo Chemical Co.,Ltd.)等。多官能性環氧樹脂之例子包括Epon 1031S(Yuka Shell Epoxy Co.,Ltd.)；Araldite 0163(Ciba Specialty Chemicals)；Detachol EX-611、Detachol EX-614、Detachol EX-614B、Detachol EX-622、Detachol EX-512、Detachol EX-521、Detachol EX-421、Detachol EX-411、Detachol EX-321(NAGA Celsius Temperature Kasei Co.,Ltd.)；EP-5200R、KD-1012、EP-5100R、KD-1011、KDT-4400A70、KDT-4400、YH-434L、YH-434、YH-300(Kukdo Chemical Co.,Ltd.)等。胺環氧樹脂之例子包括EPIKOTE 604(Yuka Shell Epoxy Co.,Ltd.)；YH-434(Tohto Kagaku Co.,Ltd.)； TETRAD-X及TETRAD-C(Mitsubishi Gas Chemical Company Inc.)；ELM-120(Sumitomo Chemical Industry Co.,Ltd.)等。雜環環氧樹脂之例子包括PT-810(Ciba Specialty Chemicals)。經取代之環氧樹脂的例子包括：ERL-4234、ERL-4299、ERL-4221、ERL-4206(UCC Co.,Ltd.)等。以萘酚為主之環氧樹脂的例子包括：Epiclon HP-4032、Epiclon HP-4032D、Epiclon HP-4700，及Epiclon HP-4701(Dainippon Ink and Chemicals,Inc.)。非酚之環氧樹脂的例子包括YX-4000H(Japan Epxoy Resin)、YSLV-120TE、GK-3207(Nippon steel chemical)、NC-3000(Nippon Kayaku)等。此等環氧樹脂可單獨或以混合物使用。
以黏著劑組成物之總固體含量為基準，環氧樹脂可以5重量%至30重量%，較佳係7重量%至20重量%之量存在。於此範圍內，可達成高可靠度及優異機械性質。
固化劑
固化劑可包括二種具有不同反應溫度區之固化劑。
於某些實施例，固化劑包括酚固化劑及胺固化劑。
雖然此項技藝已知之任何酚固化劑可不受限地使用，但於單一分子中含有二或更多個酚羥基基團且於水解時展現優異耐電解腐蝕性之雙酚樹脂，諸如，雙酚A、雙酚F、雙酚S等；酚醛清漆樹脂；雙酚A酚醛清漆樹脂；及酚樹脂，諸如，二甲苯、甲酚酚醛清漆、聯苯樹脂等。較 佳地，可使用酚醛清漆樹脂或雙酚A酚醛清漆樹脂。
可購得之酚固化劑的例子包括H-1、H-4、HF-1M、HF-3M、HF-4M，及HF-45(Meiwa Plastic Industries Co.,Ltd.)；對二甲苯酚固化劑之例子包括MEH-78004S、MEH-7800SS、MEH-7800S、MEH-7800M、MEH-7800H、MEH-7800HH，及MEH-78003H(Meiwa Plastic Industries Co.,Ltd.)、PH-F3065(Kolong Industries Co.,Ltd.)；聯苯固化劑之例子包括MEH-7851SS、MEH-7851S、MEH-7851M、MEH-7851H、MEH-78513H、MEH-78514H(Meiwa Plastic Industries Co.,Ltd.)，及KPH-F4500(Kolong Industries Co.,Ltd.)；且三苯基甲基固化劑之例子包括MEH-7500、MEH-75003S、MEH-7500SS、MEH-7500S、MEH-7500H(Meiwa Plastic Industries Co.,Ltd.)等。此等可單獨或以其等之混合物使用。以黏著劑組成物之總固體含量為基準，酚固化劑可以0.5重量%至14重量%，較佳係1重量%至10重量%之量存在。
以固化率調整而言適用於本發明之黏著劑組成物的固化劑可為芳香族二胺固化劑。較佳地，胺固化劑係於單一分子內具有二或更多個胺基團之芳香族化合物，且不限於此等，且係以，例如，化學式1至5表示。
其中，A係一單鍵或係選自由-CH2-、-CH2CH2-、-SO2-、-NHCO-、-C(CH3)2-，及-O-所構成之族群；且R1至R10每一者獨立地係氫、一C1-C4烷基基團、一C1-C4烷氧基基團，及胺基團，附帶條件係R1至R10包含至少一胺基團。
其中，R11至R18包含至少一胺基團，且每一者獨立地係氫、一C1至C4烷基基團、一烷氧基基團、一羥基基團、一氰化物基團，或鹵素。
其中，Z1係氫、一C1至C4烷基基團、一烷氧基基團，或一羥基基團；R19至R33包含至少一胺基團，且每一者獨立地係氫、一C1至C4烷基基團、一烷氧基基團、一羥基基團、一氰化物基團，或鹵素。
其中，R34至R41包含至少一胺基團，且每一者獨立地係氫、一C1至C4烷基基團、一烷氧基基團、一羥基基團、一氰化物基團，或鹵素。
其中，X3係選自由-CH2-、-NH-、-SO2-、-S-，及-O-所構成族群之一者；且R42至R49包含至少一胺基團，且每一者獨立地係氫、一C1至C4烷基基團、一烷氧基基團、一羥基基團、一氰化物基團，或鹵素。
具化學式1之固化劑的例子包括3,3'-二胺基聯苯胺、4,4'-二胺基二苯基甲烷、4,4'或3,3'-二胺基二苯基碸、4,4'-二胺基二苯基酮、4,4'-二胺基二苯基醚、3,3'-二胺基二苯基酮、1,4'或1,3'-雙(4或3-胺基異丙苯基)苯、1,4'-雙(4或3-胺基苯氧基)苯、2,2'-雙[4-(4或3-胺基苯氧基)苯基]丙烷、雙[4-(4或3-胺基苯氧基)苯基]碸、4,4'-二胺基-3,3',5,5'-四丁基二苯基酮、4,4'-二胺基-3,3',5,5'-四乙基二苯基酮、4,4'- 二胺基-3,3',5,5'-四正丙基二苯基酮、4,4'-二胺基-3,3',5,5'-四異丙基二苯基酮、4,4'-二胺基-3,3',5,5'-四甲基二苯基酮、4,4'-二胺基-3,3',5,5'-四正丙基二苯基甲烷、4,4'-二胺基-3,3',5,5'-四甲基二苯基甲烷、4,4'-二胺基-3,3',5,5'-四異丙基二苯基甲烷、4,4'-二胺基-3,3',5,5'-四乙基二苯基甲烷、4,4'-二胺基-3,3'-二甲基-5,5'-二乙基二苯基甲烷、4,4'-二胺基-3,3'-二甲基-5,5'-二異丙基二苯基甲烷、4,4'-二胺基-3,3'-二乙基-5,5'-二乙基二苯基甲烷、4,4'-二胺基-3,5-二甲基-3',5'-二乙基二苯基甲烷、4,4'-二胺基-3,5-二甲基-3',5'-二異丙基二苯基甲烷、4,4'-二胺基-3,5-二乙基-3',5'-二丁基二苯基甲烷、4,4'-二胺基-3,5-二異丙基-3',5'-二丁基二苯基甲烷、4,4'-二胺基-3,3'-二異丙基-5,5'-二丁基二苯基甲烷、4,4'-二胺基-3,3'-二甲基-5,5'-二丁基二苯基甲烷、4,4'-二胺基-3,3'-二乙基-5',5'-二丁基二苯基甲烷、4,4'-二胺基-3,3'-二甲基二苯基甲烷、4,4'-二胺基-3,3'-二乙基二苯基甲烷、4,4'-二胺基-3,3'-二正丙基二苯基甲烷、4,4'-二胺基-3,3'-二異丙基二苯基甲烷、4,4'-二胺基-3,3'-二丁基二苯基甲烷、4,4'-二胺基-3,3',5-三甲基二苯基甲烷、4,4'-二胺基-3,3',5-三乙基二苯基甲烷、4,4'-二胺基-3,3',5-三正丙基二苯基甲烷、4,4'-二胺基-3,3',5-三異丙基二苯基甲烷、4,4'-二胺基-3,3',5-三丁基二苯基甲烷、4,4'-二胺基-3-甲基-3'-乙基二苯基甲烷、4,4'-二胺基-3-甲基-3'-異丙基二苯基甲烷、4,4'-二胺基-3-甲基-3'-丁基二苯基甲烷、4,4'-二胺基-3-異丙基-3'-丁基二苯基甲烷、2,2-雙(4-胺基-3,5-二甲基苯基)丙烷、2,2-雙(4-胺基-3,5-二 乙基苯基)丙烷、2,2-雙(4-胺基-3,5-二正丙基苯基)丙烷、2,2-雙(4-胺基-3,5-二異丙基苯基)丙烷、2,2-雙(4-胺基-3,5-二丁基苯基)丙烷、4,4'-二胺基-3,3',5,5'-四甲基二苯基苯甲醯苯胺、4,4'-二胺基-3,3',5,5'-四乙基二苯基苯甲醯苯胺、4,4'-二胺基-3,3',5,5'-四正丙基二苯基苯甲醯苯胺、4,4'-二胺基-3,3',5,5'-四異丙基二苯基苯甲醯苯胺、4,4'-二胺基-3,3',5,5'-四丁基二苯基苯甲醯苯胺、4,4'-二胺基-3,3',5,5'-四甲基二苯基碸、4,4'-二胺基-3,3',5,5'-四乙基二苯基碸、4,4'-二胺基-3,3',5,5'-四正丙基二苯基碸、4,4'-二胺基-3,3',5,5'-四異丙基二苯基碸、4,4'-二胺基-3,3',5,5-四甲基二苯基醚、4,4'-二胺基-3,3',5,5'-四乙基二苯基醚、4,4'-二胺基-3,3',5,5'-四正丙基二苯基醚、4,4'-二胺基-3,3',5,5'-四異丙基二苯基醚、4,4'-二胺基-3,3',5,5'-四丁基二苯基醚、3,3'-二胺基二苯基酮、3,4-二胺基二苯基酮、3,3'-二胺基二苯基醚、3,3'-二胺基二苯基甲烷、3,4'-二胺基二苯基甲烷、2,2'-二胺基-1,2-二苯基乙烷或4,4'-二胺基-1,2-二苯基乙烷、2,4-二胺基二苯基胺、4,4'-二胺基八氟聯苯、鄰-聯茴香胺等。
具化學式2之固化劑的例子包括1,5-二胺基萘、1,8-二胺基萘、2,3-二胺基萘等。具化學式3之固化劑的例子包括p,p’,p”-三胺三苯甲醇等。具化學式4之固化劑的例子包括1,2-二胺基蒽醌、1,4-二胺基蒽醌、1,5-二胺基蒽醌、2,6-二胺基蒽醌、1,4-二胺基-2,3-二氯蒽醌、1,4-二胺基-2,3-二氰基-9,10-蒽醌、1,4-二胺基-4,8-二羥基-9,10-蒽醌等。具化學式5之固化劑的例子包括3,7-二胺基-2,8-二甲基二苯并噻 吩碸、2,7-二胺基芴、3,6-二胺基咔唑等。
再者，非如上固化劑之諸如對苯二胺、間苯二胺、間甲苯二胺、2,2'-雙[4-(4或3-胺基苯氧基)苯基]六氟碸、2,2'-雙[4-(4或3-胺基苯氧基)苯基]六氟丙烷的固化劑可用於本發明。
以黏著劑組成物之總固體含量為基準，胺固化樹脂可以1重量%至10重量%，較佳係1重量%至5重量%之量存在。
固化催化劑
用於半導體的黏著劑組成物可進一步包括一固化催化劑。於本發明中，固化催化劑促進半導體方法期間之環氧樹脂的固化，且可為選自由三聚氰胺催化劑、咪唑催化劑，及磷催化劑所構成族群之至少一者，且不限於此等。較佳地，係使用磷催化劑。
適用於本發明之黏著劑組成物的磷催化劑之例子包括膦固化劑，諸如，TBP、TMTP、TPTP、TPAP、TPPO、DPPE、DPPP、DPPB(Hokko Chemical Industry Co.,Ltd.)等。
適用於本發明之黏著劑組成物的咪唑固化催化劑之例子包括2-甲基咪唑、2-乙基-4-甲基咪唑、2-十一烷基咪唑、2-十七烷基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、1-苯甲基-2-甲基咪唑、2-乙基咪唑、2-異丙基咪唑、2-苯基-4-苯甲基咪唑、2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑、2-苯基-4-苯甲基-5-羥基甲基咪唑、4-4'-亞甲基雙-(2-乙基-5-甲基咪唑)、2-胺基乙基-2-甲基咪 唑，及1-氰基乙基-2-苯基-4,5-二(氰基乙氧基甲基)咪唑，且不限於此等。可購得之咪唑固化催化劑的例子包括2MZ、2E4MZ、C11Z、C17Z、2PZ、2PZ-CN、2P4MZ、1B2MZ、2EZ、2IZ、2P4BZ、2PH2-PW、2P4MHZ、2P4BHZ、2E4MZ-BIS、AMZ、2PHZ-CN(Asahi Kasei Corporation)，且不限於此等。特別地，作為咪唑固化催化劑，係使用2-苯基-4,5-二羥基甲基咪唑，或2-苯基-4-甲基咪唑。
以黏著劑組成物之總固體含量為基準，固化催化劑可以0.1重量%至10重量%之量存在。於此固化催化劑範圍，可達成高的耐熱性、流動性，及連接性能，且不會誘發環氧樹脂快速反應。
矽烷偶合劑
用於半導體的黏著劑組成物可進一步包含矽烷偶合劑。矽烷偶合劑係作為黏著促進劑，以於組成物摻合期間經由其間之化學偶合增強諸如填料之無機材料與有機材料表面間之黏著。
此項技藝已知之任何矽烷偶合劑可用於本發明之組成物，且其例子包括：含環氧基團之矽烷偶合劑，諸如，2-(3,4-環氧環己基)-乙基三甲氧基矽烷、3-環氧丙氧基三甲氧基矽烷，及3-環氧丙氧基丙基三乙氧基矽烷；含胺基團之矽烷偶合劑，諸如，N-2-(胺基乙基)-3-胺基丙基甲基二甲氧基矽烷、N-2-(胺基乙基)-3-胺基丙基三甲氧基矽烷、N-2-(胺基乙基)-3-胺基丙基三乙氧基矽烷、3-胺基丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、3-三乙氧基矽烷 基-N-(1,3-二甲基亞丁基)丙胺，及N-苯基-3-胺基丙基三甲氧基矽烷；含巰基之矽烷偶合劑，諸如，3-巰基丙基甲基二甲氧基矽烷，及3-巰基丙基三乙氧基矽烷；及含異氰酸酯之矽烷偶合劑，諸如，3-異氰酸酯丙基三乙氧基矽烷。此等矽烷偶合劑可單獨或以其等之混合物使用。
以黏著劑組成物之總固體含量為基準，矽烷偶合劑可以0.14重量%至5重量%，較佳係0.2重量%至3重量%，更佳係0.5重量%至2重量%之量存在。於此範圍內，可獲得高黏著可靠度，且可降低氣泡發生。
填料
本發明之黏著劑組成物可進一步包括填料。
適用於本發明之組成物的填料之例子包括：金屬粉末，諸如，金、銀、銅及鎳粉末；及非金屬，諸如，氧化鋁、氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氮化鋁、二氧化矽、氮化硼、二氧化鈦、玻璃、氧化鐵，及陶瓷。較佳係使用二氧化矽。
填料的形狀及尺寸並無特別限制。球形二氧化矽或非結晶二氧化矽典型上被作為填料。二氧化矽之顆粒尺寸範圍可為從約5 nm至20 μm。
以黏著劑組成物之總固體含量為基準，填料係以1重量%至30重量%，較佳係5重量%至25重量%之量存在。於此範圍內，可獲得高的流動性、成膜性質，及黏著性。
溶劑
黏著劑組成物可進一步包括溶劑。溶劑係用以降 低黏著劑組成物之黏度，藉此，增進黏著劑膜形成。適用於黏著劑組成物之溶劑的特別例子包括有機溶劑，諸如，甲苯、二甲苯、丙二醇單甲醚乙酸酯、苯、丙酮、甲乙酮、四氫呋喃、二甲基甲醯胺，及環己酮，且不限於此等。
本發明之另一方面係有關於用於半導體之一黏著劑膜，其包含依據本發明之黏著劑組成物。不需要特別裝置或設備用以使用依據本發明之黏著劑組成物形成用於半導體之黏著劑膜，且此項技藝普遍所知之任何方法可用於製造此黏著劑膜。例如，個別之組份溶於一溶劑，且使用一珠磨機充份捏合，其後，將形成物沉澱於一聚對苯二甲酸乙二酯(PET)膜，其接受脫離處理，且於100℃之爐內乾燥10~30分鐘，製備具有適合厚度之一黏著劑膜。
於一實施例，用於半導體之黏著劑膜可包括一基底膜、一黏著劑層、一結合層，及一保護膜，其等係以此順序依序堆疊。
黏著劑膜較佳係具有5 μm至200 μm之厚度，更佳係7 μm至100 μm。於此範圍內，黏著劑膜展現足夠黏著性，同時提供具經濟性之可行性。更佳地，黏著劑膜具有10 μm至60 μm之厚度。
其次，本發明參考下列範例將變得更明顯，且需瞭解下列範例僅係提供作為例示說明，且非限制本發明。
範例 範例1-3：製備用於半導體的黏著劑組成物
於一1公升之圓柱形燒瓶，添加丁酮溶劑，且與 如表1中列示般製備之一聚合物樹脂、一環氧樹脂、一酚固化樹脂、一胺固化樹脂、一固化催化劑、填料，及一矽烷偶合劑混合，其後使用一攪拌器以5000 rpm混合及攪拌30分鐘，藉此，製備用於半導體之一黏著劑組成物。然後，製得之組成物經由一30 μm膠囊式過濾器過濾，且使用一塗敷器塗覆至20 μm厚度以製備一黏著劑膜，其轉而於100℃乾燥20分鐘，且於室溫留置1天，藉此，製備範例1至3之每一用於半導體之黏著劑膜。
比較例1-5：製備用於半導體的黏著劑組成物
除了表1中列示之某些組份外，用於半導體的黏著劑組成物係以與範例1至3相同之方式製備。
用於範例及比較例之代表性組份係如下。
(1)聚合物樹脂：SG-P3(重量平均分子量：850000，Tg：15℃，Nagase Chemtex Co.,Ltd.)
(2)甲酚酚醛清漆環氧樹脂：YDCN-500-90P(EEW：200 g/eq.，S.P.：90℃，Kukdo Chemical Co.,Ltd.)
(3)芳香族胺固化劑：4,4'-亞甲基雙(2,6-二乙基苯胺)(M.P.：89℃，Tokyo Chemical Industry Co.,Ltd.)
(4)酚固化樹脂：MEH-7800M(OH eq 175 g/eq.，S.P.：89℃，Meiwa Plastic Co.,Ltd.)
(5)咪唑固化催化劑：2PZ-CN(Shikoku chemicals Co.,Ltd.)
(6)填料：Aerosil-200(顆粒尺寸：16 nm，Degussa GmbH)
(7)填料：SO-25H(顆粒尺寸：0.5 μm，ADMATECH Co.,Ltd.)
(8)矽烷偶合劑：KBM-403(Shinetsu Co.,Ltd.)
範例1至3及比較例1至5製備之每一黏著劑膜係如下般測試，且結果係顯示於表4。
1.測量固化後之貯存模量：10片黏著劑膜於60℃層合，且切成5.5 mm x 15 mm之尺寸。樣品具有約200~300 μm之厚度。樣品接受150℃之引線接合條件下之固化20分鐘。然後，樣品於150℃之貯存模量係使用DMA(動態機械分析器，型號Q800，TA Co.,Ltd.)藉由以4℃/分鐘之溫度增加速率從30℃掃瞄至260℃而測量。
2.測量固化前熱量及固化後熱量：每一黏著劑膜之固化前熱量係使用DSC(差式掃瞄量熱計，TA Co.,Ltd.)藉由以10℃/分鐘之溫度增加速率從0℃掃瞄至300℃而測量。黏著劑膜之固化後熱量係於此膜於150℃之引線接合條件下固化20分鐘後測量。
3.反應固化率：為模擬引線接合時之熱歷史，製得之黏著劑膜於150℃之一熱板上固化20分鐘，且測量黏著劑膜之固化後熱量。然後，黏著劑膜之反應固化率使用項 目2之固化後熱量及固化前熱量依據下列方程式計算。
反應固化率(%)=(1-(固化後熱量)/(固化前熱量))×100%
4.模製後孔隙面積比率：以置於一安裝機的一熱板上且使用異丙醇(IPA)移除外來物質之經拋光的晶圓，此晶圓之一鏡面置於製得的黏著劑膜之一黏著表面上。此處，安裝機溫度設為60℃，其係一般表面溫度。晶圓-黏著劑膜之組件藉由鋸切切成10x10 mm之晶片尺寸，且於120℃及1 kgf/1sec與一已於表2之條件下接受預處理之PCB附接，藉此，製備一樣品。
然後，製得之樣品接受1週期之於150℃之一熱板上固化20分鐘，且EMC模製於表3之條件下實施，其後測量孔隙比率。
然後，形成物使用一切割鋸切成個別單元，其後移除PCB且使用一研磨單元研磨至黏著劑膜之黏著劑層露出為止，以測量模製後之孔隙比率。此處，為促進孔隙觀察，形成物被研磨，使得部份留下之PCB之一焊料阻劑層至半透明程度。
研磨後，露出之黏著劑層使用一顯微鏡(放大 率：25x)照相，且孔隙之存在經由影像分析檢測。為使孔隙數量數位化，使用柵格計數方法。為測量孔隙數量，使用柵格計數方法。特別地，樣品總面積區分成10個柵格列及10個柵格行，含有孔隙之柵格數被計量且轉化成%(孔隙面積比率)。
孔隙面積比率=(孔隙面積/總面積)x100%
5.耐回流性：每一製得之黏著劑膜係置於以一二氧化物層塗覆之一80 μm厚晶圓上，且切成具有10x10 mm尺寸之晶片。此等晶片於120℃附接至一QDP封裝件。形成之封裝件於引線接合條件下留置於一熱板上20分鐘，且以EMC(SG-8500BC，Cheil Industries,Korea)於175℃模製120秒，其後於175℃之爐內後固化2小時。製得之樣本於85℃/85RH%吸收水分168小時，且回流係於最大260℃進行三次。然後，於樣本上觀察裂縫。
對於範例1至3製備之黏著劑膜，酚固化劑進一步添加至由一環氧樹脂及一胺固化劑所組成之一現存固化系統，使得黏著劑膜能經由酚固化劑之OH官能基團之酸促進 形成一足夠交聯系統，即使以於150℃引線接合20分鐘之不足夠熱歷史，藉此有效避免藉由因不足夠固化使組成物發泡而造成之失效或不足之黏著造成可靠度惡化。可看到範例1至3之黏著劑膜的快速反應於150℃固化20分鐘後提供2MPa或更多之貯存模量及50%或更多之固化率。
對於比較例1之胺固化劑之單一固化系統及比較例2之酚固化劑之單一固化系統，150℃持續20分鐘之不足夠熱歷史造成一不足夠交聯系統，導致低固化率及貯存模量，因此，於耐回流性測試中造成破裂。
對於比較例3至5製備之黏著劑膜，由於快速反應，固化後貯存模量高。但是，當於EMC模製時藉由對孔隙施加壓力移除於晶粒附接方法陷於PCB內之孔隙時，黏著劑膜之相對較低量之聚合物樹脂造成低孔隙移除特性，因此，於耐回流測試造成破裂。
雖然某些實施例已結合圖式而提供，但對於熟習此項技藝者明顯地係此等實施例僅提供當作例示說明，且各種修改、改變、變化，及等效實施例可於未偏離本發明之精神及範圍而進行。本發明之範圍需僅受限於所附之申請專利範圍及其等效物。

Claims (14)

  1. 一種用於半導體的黏著劑膜，以該黏著劑膜之總固體含量為基準，包含60重量%至80重量%之一熱塑性樹脂、一酚固化劑，及一胺固化劑，該黏著劑膜於150℃固化20分鐘後具有2 MPa或更多之貯存模量及50%或更多之反應固化率。
  2. 如申請專利範圍第1項之黏著劑膜，其中，該黏著劑膜於150℃固化20分鐘及於17.5℃模製120秒後具有10%或更少之孔隙面積比率。
  3. 如申請專利範圍第1項之黏著劑膜，其中，該胺固化劑包含至少一選自以下列化學式1至5表示之化合物， 其中，A係一單鍵或係選自由-CH2-、-CH2CH2-、-SO2-、-NHCO-、-C(CH3)2-，及-O-所構成之族群；且R1至R10每一者獨立地係氫、一C1-C4烷基基團、一C1-C4烷氧基基團，及胺基團，附帶條件係R1至R10包含至少一胺基團， 其中,R11至R18包含至少一胺基團，且每一者獨立地係氫、一C1至C4烷基基團、一烷氧基基團、一羥基基團、一氰化物基團，或鹵素， 其中，Z1係氫、一C1至C4烷基基團、一烷氧基基團，或一羥基基團；R19至R33包含至少一胺基團，且每一者獨立地係氫、一C1至C4烷基基團、一烷氧基基團、一羥基基團、一氰化物基團，或鹵素， 其中，R34至R41包含至少一胺基團，且每一者獨立地係 氫、一C1至C4烷基基團、一烷氧基基團、一羥基基團、一氰化物基團，或鹵素， 其中，X3係選自由-CH2-、-NH-、-SO2-、-S-，及-O-所構成族群之一者；且R42至R49包含至少一胺基團，且每一者獨立地係氫、一C1至C4烷基基團、一烷氧基基團、一羥基基團、一氰化物基團，或鹵素。
  4. 如申請專利範圍第1至3項中任一項之黏著劑膜，其中，該酚固化劑對該胺固化劑之重量比率範圍係從3：1至1：11。
  5. 如申請專利範圍第1至3項中任一項之黏著劑膜，進一步包含一固化催化劑。
  6. 如申請專利範圍第5項之黏著劑膜，其中，該固化催化劑具有100℃至160℃之熔點。
  7. 如申請專利範圍第5項之黏著劑膜，其中，該固化催化劑包含選自三聚氰胺催化劑、咪唑催化劑，及磷催化劑之至少一者。
  8. 如申請專利範圍第1至3項中任一項之黏著劑膜，進一步包含一矽烷偶合劑。
  9. 一種用於半導體的黏著劑組成物，以固體含量而言，以 用於半導體的該黏著劑組成物為基準，包含60重量%至80重量%之一熱塑性樹脂，5重量%至30重量%之一環氧樹脂，0.5重量%至14重量%之一酚固化劑，1重量%至10重量%之一芳香族二胺固化劑，0.1重量%至10重量%之一固化催化劑，0.14重量%至5重量%之一矽烷偶合劑，及1重量%至30重量%之一填料。
  10. 如申請專利範圍第9項之黏著劑組成物，於150℃固化20分鐘後具有2 MPa或更多之貯存模量及50%或更多之反應固化率。
  11. 一種製造半導體元件之方法，包含：使用如申請專利範圍第1-8項中任一項之用於半導體的黏著劑膜使一晶片與一佈線基材附接或使晶片彼此附接；使該等晶片或該佈線基材引線接合；及使該經引線接合之佈線基材或晶片環氧模製固化。
  12. 如申請專利範圍第11項之方法，其中，該引線接合係於該附接下連續地實施。
  13. 如申請專利範圍第11項之方法，其中，該黏著劑膜之固化係於環氧模製固化期間完成。
  14. 如申請專利範圍第11項之方法，其中，該附接係於100℃至150℃實施1分鐘至10分鐘，該引線接合係於140℃至160℃實施10分鐘至30分鐘，且該環氧模製固化係於170℃至180℃實施1分鐘至5分鐘。
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