TW201326084A - 發光陶瓷 - Google Patents

發光陶瓷 Download PDF

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TW201326084A
TW201326084A TW101136599A TW101136599A TW201326084A TW 201326084 A TW201326084 A TW 201326084A TW 101136599 A TW101136599 A TW 101136599A TW 101136599 A TW101136599 A TW 101136599A TW 201326084 A TW201326084 A TW 201326084A
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Satoshi Kuretake
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Murata Manufacturing Co
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Abstract

本發明提供一種發光頻帶較寬之發光陶瓷。本發明之發光陶瓷係以鈣鈦礦型化合物為主成分之陶瓷。陶瓷係由組成式：(M11-xM2x)(M31-yM4y)Ow (1)表示。於組成式(1)中，M1係選自由La、Y、Gd及Lu所組成之群中之至少一種。M2係選自由Ba、Sr及Ca所組成之群中之至少一種。M3為Al及Ga中之至少一者。M4為Ta及Nb中之至少一者。x滿足0.2≦x≦0.95之關係。y滿足0＜y＜0.5之關係。x與y滿足0.45≦y/x≦0.55之關係。w為用以保持電中性之正數。陶瓷含有0.1mol%~5mol%之Nd。

Description

發光陶瓷
本發明係關於一種發光陶瓷。
先前，作為脈衝雷射之光源，眾所周知有例如Nd：YAG等(參照專利文獻1)。
先前技術文獻 專利文獻
專利文獻1：日本專利特開2000-286195號公報
然而，於Nd：YAG中，因無法獲得足夠寬之發光頻帶而使短脈衝化存在極限。因此，業界要求一種發光頻帶較寬之發光材料。
本發明之主要目的在於提供一種發光頻帶較寬之發光陶瓷。
本發明之發光陶瓷係以由組成式：(M11-xM2x)(M31-yM4y)Ow (1)所表示之鈣鈦礦型化合物為主成分之陶瓷。於組成式(1)中，M1係選自由La、Y、Gd及Lu所組成之群中之至少一種。M2係選自由Ba、Sr及Ca所組成之群中之至少一種。M3為Al及Ga中之至少一者。M4為Ta及Nb中之至少一者。x滿足0.2≦x≦0.95之關係。y滿足0<y<0.5之關係。x與y滿足0.45≦y/x≦0.55之關係。w為用以保持電中性之正 數。陶瓷含有0.1 mol%~5 mol%之Nd。
於本發明之發光陶瓷之某個特定態樣中，陶瓷進而含有Cr。
於本發明之發光陶瓷之另一特定態樣中，陶瓷中之Cr之含量為0.2 mol%以上。
於本發明之發光陶瓷之又一特定態樣中，照射波長600 nm之光時所獲得之Nd發光之半寬值為20 nm以上。
根據本發明，可提供一種發光頻帶較寬之發光陶瓷。
以下，對實施本發明之較佳形態之一例進行說明。其中，下述實施形態僅為例示。本發明並不受下述實施形態任何限定。
本實施形態之發光陶瓷係以由下述組成式(1)所表示之鈣鈦礦型化合物為主成分之陶瓷。
(M11-xM2x)(M31-yM4y)Ow (1)[於組成式(1)中，M1係選自由La、Y、Gd及Lu所組成之群中之至少一種，M2係選自由Ba、Sr及Ca所組成之群中之至少一種，M3為Al及Ga中之至少一者，M4為Ta及Nb中之至少一者，0.2≦x≦0.95，0<y<0.5，0.45≦y/x≦0.55，w為用以保持電中性之正數]。
於組成式(1)中，M1較佳為含有La。M2較佳為含有Sr。M3較佳為含有Al。M4較佳為含有Ta。較佳為，x處於0.2≦x≦0.95之範圍，且y處於0<y<0.5之範圍，且y/x滿足 0.45≦y/x≦0.55之關係。作為w，例如可列舉3。
再者，於陶瓷中，鈣鈦礦型化合物理論上由(M11-xM2x)(M31-yM4y)Ow表示，(M11-xM2x)與(M31-yM4y)之莫耳比((M11-xM2x)：(M31-yM4y))並不嚴格限定於1：1。於本發明中，鈣鈦礦型化合物(M11-xM2x)(M31-yM4y)Ow中包含(M11-xM2x)與(M31-yM4y)之莫耳比((M11-xM2x)/(M31-yM4y))為0.95~1.05者。
陶瓷含有0.1 mol%~5 mol%左右之Nd。陶瓷更佳為含有0.5 mol%~3 mol%左右之Nd。其原因為，於陶瓷吸收激發光而獲得Nd之發光之過程中，若添加量過少，則不易吸收激發光，從而難以獲得較強之發光，反之，若添加量過大，則會因濃度淬滅而變得不易發光。再者，於陶瓷中，Nd可於由ABOw所表示之鈣鈦礦型化合物之A位或B位進行佔位(site substitution)，亦可不進行佔位。
本實施形態之發光陶瓷係以由組成式：(M11-xM2x)(M31-yM4y)Ow (1)所表示之鈣鈦礦型化合物為主成分之陶瓷，且含有0.1 mol%~5 mol%之Nd。本實施形態之發光陶瓷與先前之Nd：YAG相比，發光頻帶較寬。例如，發光陶瓷可使照射波長600 nm之激發光時之900 nm附近之Nd發光的半寬值為20 nm以上，進而為30 nm以上。
陶瓷較佳為進而含有Cr。其原因為，於陶瓷吸收激發光而獲得Nd之發光之過程中，因進而含有Cr而使激發光之吸收強度或可吸收之波長範圍增加。藉此，陶瓷於如使用如太陽光之寬頻帶之光而激發之情形時，可更強地發光。陶 瓷較佳為進而含有0.2 mol%~5 mol%左右之Cr，更佳為進而含有0.5 mol%~3 mol%左右之Cr。其原因為，於陶瓷吸收寬頻帶之激發光而獲得Nd之發光之過程中，若添加量過少，則陶瓷無法充分吸收激發光，從而難以獲得較強之發光，反之，若添加量過大，則會因濃度淬滅而不易發光。再者，於陶瓷中，Cr可於由ABOw所表示之鈣鈦礦型化合物之A位或B位進行佔位，亦可不進行佔位。
再者，所謂本發明中之半寬值係表示發光強度達到最大發光強度之一半以上的波長之寬度者。所謂最大發光強度係表示由陶瓷所獲得之發光光譜中880 nm之發光波峰之最大值者。
又，於本發明中，波長365 nm~850 nm之光之吸收量係由下式算出者，且作為表示具有寬頻帶之波長之光的吸收程度之指標而使用。
I：波長λ時之基板之直線透過率
I0：波長700 nm時之基板之直線透過率
t：基板之壁厚(cm)
陶瓷除含有構成由(M11-xM2x)(M31-yM4y)Ow所表示之成分的M1、M2、M3、M4或Nd、Cr以外，亦可含有不可避免地混入之雜質(以下，稱為「不可避免之雜質」)。作為不可避免之雜質之具體例，可列舉Si、B、Zr、Al等。
以下，根據具體實施例，對本發明進一步進行詳細說明。但本發明並不受以下之實施例任何限定，可於不變更其主旨之範圍內進行適當變更而實施。
(實驗例)
首先，準備高純度之La(OH)3、Lu2O3、Gd2O3、SrCO3、BaCO3、Al2O3、Ga2O3、Ta2O5、Nb2O5作為原料。以成為下述表1之組成之方式稱量該等原料，於球磨機中濕式混合20小時。使所獲得之混合物乾燥後，以1400℃預燒3小時，獲得預燒物。將該預燒物與水及有機分散劑一併投入球磨機中，濕式粉碎12小時。藉由濕式成形，使該粉碎物成形為直徑15 mm、厚度5 mm之圓板狀。
其次，將上述成形物埋入包含相同組成之粉體中，於氧氣氣氛下(約98%氧濃度)以1700℃煅燒20小時，獲得燒結體。關於所獲得之煅燒體，藉由X射線繞射(XRD(X-ray diffraction))法可知以簡單立方晶之鈣鈦礦型化合物為主成分。
繼而，以成為厚度為2.0 mm之基板之方式對燒結體之兩面進行鏡面研磨。其後，於H2/H2O還原氣氛(氧分壓：1×10-15 MPa)中進行熱處理，從而製作樣本。熱處理之最高溫度設為1000℃，1000℃之保持時間設為3小時。
繼而，使用島津製作所製造之紫外可見分光光度計UV-2500PC，對樣本1、2進行透光率之測定。將結果示於圖1。圖1中表示含有Nd之樣本1(單點虛線)與含有Nd及Cr之樣本2(實線)的結果。
將各樣本之波長365 nm~850 nm時之光之吸收量(nm．cm-1) 示於表1。此處，吸收量由下式算出。
I：波長λ時之基板之直線透過率
I0：波長700 nm時之基板之直線透過率
t：基板之壁厚(cm)
繼而，使用浜松光子股份有限公司製造之多通道分光器PMA-12，對樣本1、2進行以與Nd3+離子之4I9/2→4G5/2+2G7/2躍遷相當之波長600 nm、及與Cr3+之3d-3d躍遷相當之波長450 nm之光激發時的發光光譜測定。作為發光光譜之例，將樣本1及樣本2之測定結果示於圖2(波長600 nm)及圖3(波長450 nm)。於圖2及圖3中，樣本1以單點虛線表示，樣本2以實線表示。關於與以波長600 nm之光激發時之Nd3+離子之4F3/2→4I9/2躍遷相當的波長880 nm之發光波峰，將其最大發光強度及半寬值示於表1。此處，最大發光強度係表示發光波峰之最大值者，以將樣本1之最大發光強度設為1之情形時的相對值表示。又，半寬值係設為發光強度達到最大發光強度之一半以上的波長之寬度。作為參考樣本，於添加有1原子%之Nd之Nd：YAG單晶(Oxide Corporation製造，直徑 10 mm，厚度2 mm)中亦進行相同測定，並將測定結果示於表1。再者，於本實驗例中，針對根據雷射振盪中所使用之4F3/2→4I11/2躍遷(波長1060 nm附近之發光)而評價之Nd之發光特性，用波長900 nm附近之Nd發光(4F3/2→4I9/2)代替而進行測定。
如圖1所示，於含有Nd之樣本1中，於可見光區域可見伴隨Nd3+離子之4f-4f電子躍遷而產生之吸收。於含有Nd及Cr之樣本2中，可見因Cr3+離子之3d-3d電子躍遷而產生之範圍較廣之吸收(波長600 nm附近與波長450 nm附近)。
於樣本1、6中，如圖2及圖4所示，於照射與Nd3+離子之4I9/2→4G5/2+2G7/2躍遷相當之波長600 nm之光之情形時，於波長900 nm附近可見與Nd3+離子之4F3/2→4I9/2躍遷相當之發光。樣本1、6中之波長880 nm之發光時之半寬值如表1所示，與作為參考樣本之Nd：YAG(細線)相比，大約20倍。可知樣本1、6之發光頻帶較寬。
於樣本2、13中亦如圖2、圖4及表1所示，波長880 nm之發光之半寬值較大，從而可知樣本2、13之發光頻帶亦與樣本1、6同樣較寬。再者，於圖2中，樣本2之波長700~800 nm之發光係藉由Cr3+之2E→4A2躍遷而實現。
於樣本2中，如圖3所示，於照射與Cr3+之吸收波長相當之波長450 nm之光之情形時，雖然為原本無法激發Nd原子之波長，但可見與圖2同樣之Nd3+離子之發光。根據以上情況，可認為於樣本2中自Cr3+向Nd3+產生能量移動。
如表1所示，於含有Cr之樣本2中，相較於不含有Cr之樣本1，波長365 nm~850 nm之光之吸收量較大。根據含有Cr之樣本9~11之吸收量與不含有Cr之樣本5~7之吸收量的比較可知，Cr可使陶瓷中之波長365 nm~850 nm之光之吸收量進一步增大。
再者，由表1之最大發光強度可知，較佳為Nd之添加量 處於0.5 mol%~5 mol%，Cr之添加量處於0.2 mol%~5 mol%之範圍。
圖1係表示分別對樣本1、2照射光時光之波長與透過率之關係的圖表。
圖2係表示分別對樣本1、2及參考樣本(Nd：YAG)照射波長600 nm之光時發光波長與發光強度之關係的圖表。
圖3係表示分別對樣本1、2照射波長450 nm之光時發光波長與發光強度之關係的圖表。
圖4係表示分別對樣本1、6、13照射波長600 nm之光時發光波長與發光強度之關係的圖表。

Claims (4)

  1. 一種發光陶瓷，其係以由如下組成式(1)所表示之鈣鈦礦型化合物為主成分之陶瓷，且含有0.1 mol%~5 mol%之Nd；組成式：(M11-xM2x)(M31-yM4y)Ow (1)[於組成式(1)中，M1係選自由La、Y、Gd及Lu所組成之群中之至少一種，M2係選自由Ba、Sr及Ca所組成之群中之至少一種，M3為Al及Ga中之至少一者，M4為Ta及Nb中之至少一者，且0.2≦x≦0.95，0<y<0.5，0.45≦y/x≦0.55，w為用以保持電中性之正數]。
  2. 如請求項1之發光陶瓷，其中上述陶瓷進而含有Cr。
  3. 如請求項2之發光陶瓷，其中上述陶瓷中之Cr之含量為0.2 mol%以上。
  4. 如請求項1至3中任一項之發光陶瓷，其中照射波長600 nm之光時所獲得之Nd發光之半寬值為20 nm以上。
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