TW201320199A - Method for forming a silicon layer on a substrate, a method for forming a silicon oxide layer, and a metal oxide TFT device having the same - Google Patents

Abstract

Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.

Description

a method of forming a germanium layer on a substrate, a method of forming a germanium oxide layer, and having Metal oxide thin film transistor element

Embodiments of the invention are generally directed to methods of forming a silicon containing layer. More specifically, the present invention relates to a method of forming a germanium-containing layer that can be applied to a thin film transistor (TFT).

Plasma display panels and liquid crystal displays (LCDs) are commonly used on flat panel displays. LCDs typically contain two glass substrates and a layer of liquid crystal material sandwiched therein. The glass substrate may be a semiconductor substrate or may be a transparent substrate such as glass, quartz, sapphire or a transparent plastic film. The LCD can also include a light emitting diode for use as a backlight.

As the demand for the resolution of LCDs increases, it has become quite important to control individual regions of a large number of liquid crystal cells, called pixels. In modern display panels, there can be more than one million pixels. At least the same number of electro-crystal systems are formed on the glass substrate such that the respective pixels can be switched between energized and de-energized with respect to other pixels disposed on the substrate.

Bismuth-containing materials have become the basis material for most thin film transistors. Bismuth-containing materials have been used to form channel materials, such as polysilicon for Low Temperature Polysilicon Thin Film Transistors (LTPS TFTs), and as gate dielectric layers for forming thin film transistors (gate Dielectric layer), interface layer, blunt A passivation layer or even an element of an etch stop layer.

Therefore, there is a need in the art for a method of forming a thin film transistor having a stable and reliable performance using a germanium-containing material.

Embodiments of the present disclosure generally provide for the formation of a thin film transistor, an Organic Light-Emitting Diode (OLED), a Light-Emitting Diode (LED), and a yttrium-containing element in a solar cell element. Layer method. The germanium-containing layer can be used to form an active channel in a thin film transistor element including a low temperature polysilicon and a metal oxide thin film transistor element, or as a gate dielectric layer, an interface layer, a passivation layer, or an etch stop layer. An element. The ruthenium-containing layer is deposited by a vapor deposition process, and an inert gas such as argon is supplied along with the precursor of the ruthenium by a vapor deposition process. The inert gas has the function of repelling weak, suspended hydrazine-hydrogen bonds or hydrazone-hydrazine bonds, thus retaining a strong 矽-矽 bond or a 矽-oxygen bond.

In one embodiment, a method of forming a germanium-containing layer on a substrate is disclosed. The method includes transporting a substrate into a processing chamber and providing a mixed gas having a ruthenium based gas, an inert gas, and substantially no hydrogen to the processing chamber. The volumetric flow rate per unit substrate surface area of the inert gas of the mixed gas is from about 1.8 to about 79 times the volume flow rate per unit substrate surface area of the bismuth-based gas. The method additionally includes applying a radio frequency power to an electrode to excite the mixed gas into a plasma and forming an amorphous germanium layer on the substrate.

In another embodiment, a method of forming a tantalum oxide layer is disclosed. law. The method includes providing a mixed gas having a ruthenium-based gas, an inert gas, and an oxygen-containing gas to a processing chamber. The volumetric flow rate per unit surface area of the inert gas of the mixed gas is about 11 to about 80 times the volume flow rate per unit surface area of the cerium-based gas. The method also includes applying a radio frequency power to excite the mixed gas into a plasma and forming a tantalum oxide layer on the substrate.

In another embodiment, a metal oxide thin film transistor device includes a substrate, a gate insulating layer disposed on the substrate, an active channel disposed on the insulating layer, and one source-side disposed on the active channel a pole electrode and a passivation layer disposed on the source-drain electrode layer, wherein the gate insulating layer comprises a germanium oxide layer substantially free of hydrogen, wherein the active channel comprises at least indium gallium zinc oxide (InGaZnO), InGaAs, Zn, ZnO, ZnO, ZnSnO (TiSnO), copper aluminum oxide (CuAlO), beryllium copper oxide (SrCuO), beryllium copper oxysulfide (LaCuOS), gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride ( One of AlGaN) or indium gallium aluminum nitride (InGaAlN), wherein the passivation layer comprises a tantalum oxide layer substantially free of hydrogen.

In another embodiment, a metal oxide thin film transistor device includes a substrate and an active channel disposed between a source-drain electrode and a gate insulating layer on the substrate, wherein an interface is formed on the substrate Between the active channel and the gate insulating layer, the interface comprises a dielectric surface substantially free of hydrogen.

In order to have a more detailed understanding of the above features of the present invention, the following will The invention will be more fully disclosed by the embodiments and the accompanying drawings. For the sake of clarity, the same component symbols are used to denote the same components as much as possible in the specification and drawings. In addition, the elements and features of an embodiment may also be present in other embodiments for the preferred embodiments, and the same description is omitted. It is to be noted, however, that the following embodiments and the accompanying drawings are intended to illustrate

Embodiments of the present disclosure generally provide a method of forming a germanium-containing layer in a thin film transistor device. The germanium-containing layer can be used to form an active channel in a low temperature polycrystalline germanium film transistor or other suitable metal oxide TFT element, or can be used as a gate dielectric layer, an interface layer, and a passivation layer. One of the layers or even an etch stop layer. The ruthenium-containing layer is deposited by a vapor deposition process, and an inert gas such as argon is supplied along with the ruthenium precursor by a vapor deposition process. The inert gas has the function of repelling weak, suspended hydrazine-hydrogen bonds or hydrazone-hydrazine bonds, thus retaining a strong 矽-矽 bond or a 矽-oxygen bond.

In one embodiment, a method of forming an amorphous germanium layer that can be subsequently converted into a polysilicon layer is disclosed. The amorphous germanium layer can be used in a low temperature polycrystalline germanium thin film transistor element as a channel material. Alternatively, the amorphous germanium layer, tantalum oxide layer, tantalum nitride layer, hafnium oxynitride layer or other suitable germanium-containing layer formed by the method described herein can also be applied to a suitable thin film transistor device. For example, a metal oxide thin film transistor element. Amorphous germanium layer, tantalum oxide layer, tantalum nitride layer, niobium oxynitride layer or other suitable germanium-containing layer, etc., can also be used for photodiodes, semiconductor diodes, light-emitting diodes (LEDs) ),organic Light-emitting diodes (OLEDs) or other display applications. The amorphous germanium layer, the tantalum oxide layer, the tantalum nitride layer, and the niobium oxynitride layer provide high film quality and stability and low film leakage with the lowest hydrogen content, thereby effectively strengthening the transistor. The electrical performance of the component. It is worth noting that in addition to the applications mentioned above, the amorphous germanium layer can be used for other suitable components.

An exemplary embodiment of a low temperature polysilicon thin film transistor element 150 is shown in FIG. The low temperature polycrystalline germanium thin film transistor element is a metal oxide semiconductor device having a source region 109a, a channel region 109c and a drain region 109b formed on a light transparent substrate 102. The transparent substrate 102 has or does not have A selective light transmissive dielectric layer 104 is disposed thereon. The source region 109a, the channel region 109c, and the drain region 109b are generally formed by a layer of amorphous germanium (a-Si) which is initially deposited, and then heat treated (for example, annealed) to form a layer of a polysilicon layer. The source region 109a, the channel region 109c, and the drain region 109b may be formed by patterning a region on the transparent substrate 102 and ion doping the initially deposited amorphous germanium layer. Heat treatment to form a polycrystalline germanium layer. A gate dielectric layer 106 is then deposited over the polysilicon layer to block a gate electrode 114 and the channel region 109c, the source region 109a, and the drain region 109b. A gate electrode 114 is formed on top of the gate dielectric layer 106. An insulating layer 112 and device connections 110a, 110b are then formed through the insulating layer 112 to allow control of the thin film transistor element 150.

The performance and deposition of low temperature polycrystalline germanium thin film transistor component 150 The quality of the film belonging to the oxide semiconductor structure is related. The key performance elements of the metal oxide semiconductor device are the quality of the polysilicon channel layer 108, the gate dielectric layer 106, and the polysilicon channel layer/gate dielectric layer interface. The quality of the polysilicon channel layer 108 has received much attention in recent years. As discussed above, the polysilicon channel layer 108 is initially formed as an amorphous germanium layer, which is then heated to about 450 degrees Celsius or higher for a dehydrogenation process to remove hydrogen from the amorphous germanium layer. After the dehydrogenation treatment, a laser annealing treatment may be performed to convert the amorphous germanium layer into a polycrystalline germanium layer. Next, a gate insulator or other suitable layer may be formed thereon to complete the device structure.

Excess hydrogen elements (eg, an excessively high hydrogen content) in the amorphous germanium layer may penetrate into the adjacent gate dielectric layer 106 or other adjacent layers before the formation of the polysilicon channel layer 108, resulting in leakage current ( Current leakage) or other form of device failure. The amorphous germanium layer can be formed by a suitable vapor deposition process, such as Plasma Enhanced Chemical Vapor Deposition (PECVD).

2 is a cross-sectional view of one embodiment of a PECVD chamber 200 in which an amorphous germanium layer or other germanium containing layer (eg, a tantalum oxide layer) can be formed in the PECVD chamber 200. A suitable PECVD chamber is available from Applied Materials, Inc., located in Santa Clara, California. It is contemplated that the invention can be practiced using other deposition chambers including those obtained from other manufacturers.

The chamber 200 generally includes a chamber wall 202, a cavity bottom 204, and a chamber cover 212. Gas distribution plate 210 and substrate support assembly 230 define a processing space 206. The processing space 206 is formed by passing through a cavity wall to form an opening 208 with The outside is communicated such that a substrate 102 can be transported into and out of the chamber 200.

The substrate support assembly 230 includes a substrate receiving surface 232 for supporting the substrate 102 thereon. The substrate receiving surface 232 is typically equal in size or slightly larger than the substrate 102. A stem 234 couples the substrate support assembly 230 to a lift system 236 that raises and lowers the substrate support assembly 230 between the substrate transfer and processing locations. To prevent deposition on the edge of the substrate 102 when processing is performed, a shadow frame 233 may be selectively placed on the periphery of the substrate 102. A lift pin 238 is movably disposed through the substrate support assembly 230 for separating the substrate 102 from the substrate receiving surface 232 during the movement and removal of the substrate 102. The substrate support assembly 230 can also include heating and/or cooling elements 239 for maintaining the substrate support assembly 230 at a desired temperature. The substrate support assembly 230 can also include an RF return strap 231 around the substrate support assembly 230 to reduce the RF return path.

The gas distribution plate 210 is coupled around it to the chamber cover 212 or chamber wall 202 of the chamber 200 by a suspension portion 214. The gas distribution plate 210 can also be coupled to the chamber cover 212 by one or more center supports 216 to help prevent the gas distribution plate 210 from sagging and/or controlling the straightness of the gas distribution plate 210 (straightness) ) / curvature (curvature). In an embodiment, the gas distribution plate 210 has different configurations of different sizes. In an exemplary embodiment, the gas distribution plate 210 has a quadrature downstream surface 250. The downstream surface 250 has a plurality of apertures 211 formed therein that face an upper surface 218 of the substrate 102 disposed on the substrate support assembly 230. Hole 211 There may be different shapes, numbers, densities, sizes, and distributions across the gas distribution plate 210.

A gas source 220 is coupled to the chamber cover 212 to provide gas through the chamber cover 212 and then through the aperture 211 formed in the gas distribution plate 210 to the processing space 206. A vacuum pump 209 is coupled to the chamber 200 to maintain the air in the processing space 206 at a desired pressure.

An RF power source 222 is coupled to the chamber cover 212 and/or the gas distribution plate 210 to provide an RF power that generates an electric field between the gas distribution plate 210 and the substrate support assembly 230. The plasma can be generated from a gas between the gas distribution plate 210 and the substrate support assembly 230. RF power can be applied at one or more RF frequencies, for example, RF power having a frequency between about 0.3 megahertz (MHz) and about 200 MHz can be applied. In one embodiment, the RF power is provided at a frequency of 13.56 MHz.

A remote plasma source 224, such as an inductively coupled remote plasma source, can also be coupled between the gas source and the backplate. During the process interval in which the substrate is processed, a purge gas can be used in the remote plasma source 224 to be excited to provide plasma for cleaning the chamber assembly over long distances. The purge gas can be excited by the RF power supplied to the gas distribution plate 210 by the RF power source 222. Suitable purge gases include, but are not limited to, nitrogen trifluoride (NF ₃ ), fluorine (F ₂ ), and sulfur hexafluoride (SF ₆ ).

In an embodiment, the substrate 102 that can be processed in the chamber 200 can have a surface area of 10,000 square centimeters (cm ² ) or greater, such as 40,000 cm ² or greater, such as about 55,000 cm ² or greater. It will be appreciated that the processed substrate can be cut to form smaller components.

In one embodiment, the heating and/or cooling element 239 can be used to provide a substrate support assembly 230 at a temperature of about 400 degrees Celsius or less during deposition, for example, between about 100 degrees Celsius and about Celsius. Between 400 degrees, or between about 150 degrees Celsius and about 300 degrees Celsius, for example about 200 degrees Celsius. During the deposition process, the spacing between the upper surface 218 of the substrate 102 and the gas distribution plate 210 disposed on the substrate receiving surface 232 can typically vary between about 400 mils and about 1200 mils. For example, between about 400 mils and about 800 mils, or other distance between the substrate 102 and the gas distribution plate 210 selected to provide the desired deposition results. In an exemplary embodiment using a concave downstream surface gas distribution plate 210, the gap between the edge of the central portion of the gas distribution plate 210 and the substrate receiving surface 232 is between about 400 mils and about 1400 mils. The gap between the corner of the distribution plate 210 and the substrate receiving surface 232 is between about 300 mils and about 1200 mils.

FIG. 3 illustrates a flow diagram of one embodiment of a deposition process 300 that may be implemented in a chamber 200 or other suitable processing chamber as depicted in FIG. The deposition process 300 illustrates a method of depositing an amorphous germanium layer or other suitable germanium containing layer useful for thin film transistor elements or diode elements. In one embodiment, the ruthenium containing layer can be used alone or in combination with any other suitable film to enhance the electrical properties and performance of the thin film transistor component or the diode component. In a particular embodiment, the germanium-containing layer is an amorphous germanium layer, which can then be subsequently formed into a polysilicon layer via heat treatment.

Process 300 begins at step 302 by transporting the base as depicted in Figure 4A. The plate 102 is in a processing chamber, such as the PECVD chamber 200 illustrated in FIG. The substrate 102 can have an optional dielectric layer 104 disposed thereon. It is noted that the substrate 102 can have different combinations of films, structures or layers previously formed thereon to facilitate the formation of different component structures on the substrate 102. In embodiments where dielectric layer 104 is absent, the amorphous germanium layer can be formed directly onto substrate 102.

In an embodiment, the substrate 102 can be a glass substrate, a plastic substrate, a polymer substrate, a metal substrate, a single-sided substrate, a roll-to-roll substrate, or other suitable for forming a thin film transistor. Any of the transparent substrates thereon.

At step 304, a gas mixture system is supplied to the processing chamber through a gas distribution plate 210 to deposit an amorphous germanium layer 402 on the substrate 102, as depicted in FIG. 4B. When a mixed gas is supplied into the processing chamber to deposit the amorphous germanium layer 402, the mixed gas may include a silicon-based gas, an inert gas, and substantially free of hydrogen (H2). The term "substantially free of hydrogen" is used to indicate that hydrogen is not used as a direct source to form the mixed gas. A trace amount of hydrogen may be present in the inert gas and/or the ruthenium-based gas. Suitable sulfhydryl gases include, but are not limited to, decane (SiH ₄ ), dioxane (Si ₂ H ₆ ), ruthenium tetrachloride (SiF ₄ ), tetraethoxy decane (TEOS), ruthenium tetrachloride (SiCl _{4 )} ), dichlorodecane (SiH ₂ Cl ₂ ), and combinations thereof. Examples of suitable inert gases include helium, argon, neon or xenon, and the like. In one embodiment, the silicon based gas Silane (SiH _4), the inert gas is argon.

The ruthenium based gas and inert gas system are provided at a predetermined gas flow ratio. The predetermined gas flow rate ratio of the inert gas to the ruthenium based gas can help minimize the amount of hydrogen atoms contained in the film during deposition of the amorphous ruthenium layer. In one embodiment, the ruthenium-based gas and the inert gas are supplied to the processing chamber at a predetermined ratio, for example, in excess of 1:20. In one embodiment, the ratio (R) of the inert gas (eg, argon) to the sulfhydryl-based gas (eg, decane) is controlled to be greater than about 20 (argon/decane), for example, greater than 50, such as between about Between 60 and 200, in another example, between about 70 and about 100, such as about 75. Alternatively, the sulfhydryl gas and inert gas provided to the processing chamber may be provided in accordance with the volumetric flow rate per unit substrate surface area (or approximately equivalent substrate support surface). In one embodiment, decane gas (SiH ₄ ) between about 0.042 unit time standard cc/cm 2 (sccm/cm ² ) and about 0.31 sccm/cm ² may be provided into the processing chamber, and An inert gas having a flow rate between about 0.55 sccm/cm ² and about 3.29 sccm/cm ² is supplied to the processing chamber. Therefore, the volumetric flow rate ratio of the inert gas to the ruthenium-based gas per unit substrate surface is between about 1.8:1 and about 79:1. In other words, the volumetric flow rate per unit substrate surface area of the inert gas of the mixed gas is about 1.8 times to about 79 times the volume flow rate per unit substrate surface area of the cerium-based gas. In one embodiment, the sulfhydryl gas is decane and the inert gas is argon.

The inert gas (e.g., argon) supplied to the mixed gas is considered to have a relatively large molecular weight compared to the helium atom and the hydrogen atom supplied to the sulfhydryl-based gas (e.g., decane gas). When a mixed gas is supplied in the process, the argon atoms in the mixed gas can help remove the weak bond of the hydrazine-hydrogen and the weak 矽-矽 bond in the enthalpy layer and/or the ruthenium layer, thereby allowing the ruthenium layer to be The helium atom forms a strong 矽-矽 bond instead of a 矽-hydrogen bond formed from a decane gas. As described above, the strong 矽-矽 bond enhances the purity of the film and the bond energy of the ruthenium. Good film quality and purity formed in the amorphous germanium layer 402. In addition, as the argon atoms help to form strong and robust ruthenium bonds and remove impurities, not only the defects in the ruthenium layer are reduced, but also the non-crystal layer can obtain good uniformity, thereby reducing undesirable random grain boundaries ( Random grain boundary) and grain boundary defects. In addition, by using argon dilution without conventional hydrogen dilution, the supply of hydrogen atoms can be minimized or eliminated during the deposition process, thereby reducing the likelihood of hydrogen formation in the resulting amorphous germanium layer 402. The argon dilution deposition process is also believed to provide a good deposition rate, such as more than 300 angstroms per minute (Å), thereby increasing the throughput of manufacture.

Several process parameters can be controlled during the deposition process. During the deposition process, an RF source power can be applied to maintain the plasma. In one embodiment, the RF source power density can be provided between about 10 milliwatts per square centimeter (mWatt/cm ² ) and about 200 milliwatts per square centimeter. Alternatively, a VHF power can be used to provide frequencies up to about 27 MHz and about 200 MHz. The process pressure is maintained between about 0.1 Torr and about 10 Torr, such as between about 0.5 Torr and about 5 Torr, such as between about 0.8 Torr and about 2 Torr. The gap of the substrate to the gas distribution plate assembly can be controlled depending on the substrate size. In one embodiment, for a substrate greater than one square meter, the processing gap is controlled between about 400 mils and about 1200 mils, such as between about 400 mils and about 850 mils, such as 580 mils. The substrate temperature can be controlled between about 150 degrees Celsius and about 500 degrees Celsius, such as about 370 degrees Celsius.

In an embodiment, a relatively low RF power can be used, such as low At 1500 watts (Watts) or less than 100 mW/cm 2 . The use of lower RF power during deposition is believed to help form an amorphous germanium layer 402 with good uniformity control. Moreover, the use of relatively low RF power is believed to reduce the sputtering effect that may be generated by the inert gas, thereby helping to deposit the amorphous germanium layer 402 in a relatively mild plasma environment, resulting in good uniformity. Amorphous and surface roughness controlled amorphous germanium layer 402.

In step 306, after the amorphous germanium layer 402 is formed on the substrate 102, a post dehydrogenation bake process may be performed to remove hydrogen from the amorphous germanium layer 402, as shown in FIG. 4C. . After the late dehydrogenation baking treatment, the hydrogen content present in the amorphous germanium layer 402 can be mostly removed to form a dehydrogenated amorphous silicon layer 404, as shown in FIG. 4C. . As discussed above, when dehydrogenated amorphous germanium layer 404 is formed by using a gas such as an inert gas such as argon instead of hydrogen as a diluent gas which is substantially free of hydrogen, late dehydrogenation baking Processing can be performed in relatively short periods of time, such as less than 5 minutes or can be selectively cancelled.

In one embodiment, the post-dehydrogenation bake process can be processed in the in-situ of the processing chamber where the amorphous germanium layer 402 is deposited. The late dehydrogenation bake process can heat the substrate 102 to a temperature in excess of 400 degrees Celsius, such as between about 450 degrees Celsius and about 550 degrees Celsius to help vaporize the hydrogen element to form the dehydrogenated amorphous germanium layer 404.

In the embodiment where the hydrogen content of the amorphous germanium layer 402 is not high, the subsequent dehydrogenation baking treatment may be omitted in step 306 if necessary.

In step 308, after the post-dehydrogenation baking treatment, the system performs one A laser annealing treatment is performed to convert the dehydrogenated amorphous germanium layer 404 into a polycrystalline germanium layer 406, as depicted in FIG. 4D. The laser treatment assists in decrystallization of the dehydrogenated amorphous germanium layer 404 to form a polycrystalline germanium layer 406. The thermal energy provided during the laser annealing process helps the grains of the amorphous germanium layer 402 to grow into large-sized crystalline grains, forming a polycrystalline germanium layer 406. In one embodiment, the laser annealing process for crystallizing the amorphous germanium layer 404 is a quasi-molecular laser annealing process. The excimer laser annealing treatment heat treats the substrate to a temperature between about 100 degrees Celsius and about 1500 degrees Celsius.

After the laser annealing treatment, the dehydrogenated amorphous germanium layer 404 is transformed into a polycrystalline germanium layer 406. The majority of the crystalline germanium layer 406 has a crystal orientation of the (111) plane and a small portion of the (220) plane. When the polysilicon layer 406 forms the desired crystal, a high photo/dark conductivity ratio can be obtained and the overall electrical properties of the polysilicon layer 406 can be improved.

After the dehydrogenation amorphous germanium layer 404 is converted into the poly germanium layer 406, a patterning process, ion implantation or other deposition process may be performed to form the source and drain regions, the gate dielectric layer, and the source and drain electrodes. The layer, and thus the structure of the thin film transistor element, is as shown in Fig. 1 and discussed above in conjunction with Fig. 1.

As described above, the ruthenium containing layer can be used to make other layers in the thin film transistor element. Figure 5A is a cross-sectional view of a thin film transistor device 500 in accordance with another embodiment of the present invention. The thin film transistor element 500 includes a substrate 502 having a gate electrode layer 504 formed thereon. The substrate 502 may include glass, but other substrate materials such as a polymer based substrate and a flexible substrate may be considered. In an embodiment, the gate electrode layer 504 can be any suitable Made of metal materials such as indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), aluminum (Al), tungsten (W), chromium (Cr), tantalum ( Ta), molybdenum (Mo), copper (Cu), titanium (Ti), alloys thereof, or combinations thereof.

A gate insulating layer 506 is formed over the substrate 502 and the gate electrode layer 504. Materials suitable for the gate insulating layer 506 may be tantalum oxide (SiO ₂ ), bismuth oxynitride (SiON), tantalum nitride (SiN), combinations thereof, and the like. The gate insulating layer 506 can be in the form of a single layer, a composite layer, a double layer, multiple layers, or other combinations of the foregoing, as desired. In an embodiment, the gate insulating layer 506 may have a tantalum nitride layer deposited on the tantalum oxide (or reversed) as a dual layer on the substrate 502, as indicated by the dashed line 520. Alternatively, the gate insulating layer 506 can be a tantalum oxide monolayer or a tantalum nitride monolayer, as desired. The tantalum oxide layer and the tantalum nitride layer (or a niobium oxynitride layer) may be fabricated by the process 300 as described above. The ruthenium oxide and/or ruthenium nitride layer can be produced by providing an inert gas having a ruthenium-based gas and, for example, argon, and not having a mixed gas of hydrogen.

In the embodiment in which the tantalum oxide layer is formed, the mixed gas contains a sulfur-based gas, an oxygen-containing gas, and an inert gas. Suitable examples of sulfhydryl gases include, but are not limited to, decane (SiH ₄ ), dioxane (Si ₂ H ₆ ), tetraethoxydecane (TEOS), antimony tetrafluoride (SiF ₄ ), antimony tetrachloride (SiCl). ₄ ), dichlorodecane (SiH ₂ Cl ₂ ) and combinations thereof. Suitable examples of oxygen-containing gases include oxygen (O ₂ ), nitrous oxide (N ₂ O), nitrogen dioxide (NO ₂ ), water vapor (H ₂ O), hydrogen peroxide (H ₂ O ₂ ), and ozone. (O ₃ ) and so on. Suitable examples of inert gases include helium, argon, neon or xenon, and the like. In a specific embodiment, the mixed gas used to form the cerium oxide comprises decane (SiH ₄ ), oxygen (O ₂ ), and argon, or decane (SiH ₄ ), nitrous oxide, or nitrogen dioxide (N). ₂ O or NO ₂ ) and argon (Ar). It is worth noting, however, that if tetraethoxy decane (TEOS) is used as the sulfhydryl precursor, oxygen (O ₂ ) is not preferred because of the high total oxygen content in the chamber.

In the embodiment in which the tantalum nitride layer is formed, the mixed gas includes a sulfur-based gas, a nitrogen-containing gas, and an inert gas. The types of sulfhydryl gas and inert gas that can be used are as described above. Suitable examples of the nitrogen-containing gas include nitrogen (N ₂ ), nitrous oxide (N ₂ O), nitrogen dioxide (NO ₂ ), nitrogen monoxide (NO) or ammonia (NH ₃ ), and the like. In a particular embodiment, the mixed gas used to form the tantalum nitride layer comprises decane, nitrogen or ammonia, and argon.

Because of the inert gas, the required RF power is lower than when no inert gas is used. In particular, RF power is likely to be reduced by up to about 20%. Since the inert gas atoms are heavy, the ion bombardment in the process is enhanced, so that the radio frequency power reduction is made possible. Suitable RF power levels that can be applied range from about 1200 milliwatts per square centimeter (mW/cm ² ) to about 1300 milliwatts per square centimeter. Furthermore, when a bismuth-based gas and an inert gas are supplied to the chamber in a specific ratio, not only the amount required for reducing the radio frequency power but also the uniformity of the thickness of the film deposition is improved. Therefore, the addition of an inert gas produces a tantalum oxide film having reproducibility, reliability, and high quality. In one embodiment, the volumetric flow rate per unit substrate surface area of the inert gas (e.g., argon) is between about 1.05 sccm/cm ² and about 1.828 sccm/cm ² , such as about 1.65 sccm/cm ² . The ruthenium containing precursor may be provided at a volumetric flow rate per unit substrate surface area between about 0.023 sccm/cm ² to about 0.095 sccm/cm ² , such as about 0.025 sccm/cm ² . The oxygen-containing precursor can be provided at a volumetric flow rate per unit substrate surface area between about 1.05 sccm/cm ² to about 1.66 sccm/cm ² , for example about 1.16 sccm/cm ² . Thus, the amount of inert gas is from about 11 to about 80 times the amount of sulfhydryl precursor supplied. The amount of inert gas is from about 0.6 to about 1.70 times the amount of oxygen based gas provided. The amount of oxygen-containing gas is between about 11 times and about 82 times, particularly between about 11 times and about 72 times, the amount of the sulfhydryl precursor provided.

Moreover, it is worth noting that, as desired, the control of the process parameters can be controlled similarly to the process parameters of the non-layered layer described in step 304 of the above-described compounding process 300.

Next, an active channel 508 can be disposed on the gate insulating layer 506. The active channel 508 can be a low temperature poly-Silicon layer (LTPS) fabricated as described above in conjunction with the process described in FIG. Suitable dopants are, for example, N-type or P-type dopants that can be added to the low temperature polysilicon layer as needed to form active channels 508. Above the active channel 508, an optional etch stop 514 can be formed to protect the active channel 508 during formation of the source electrode 510 and the drain electrode 512. Suitable materials that can be used for the etch stop 514 include tantalum oxide, tantalum nitride, and hafnium oxynitride. The etch stop 514 can be formed by a process similar to that described above for forming the gate insulating layer 506. In some embodiments, other active layers 511, 513 can be formed prior to the source and drain electrodes 510, 512. The active layers 511, 513 may be a P-type active layer or an N-type active layer, such as an N-type germanium-containing layer or a P-type germanium-containing layer.

A passivation layer 518 can be formed over the source and drain electrodes 510, 512 and the optional etch stop 514, if present. Suitable materials that can be used for the passivation layer 518 include tantalum oxide, tantalum nitride, and hafnium oxynitride. In one embodiment, similar to the gate insulating layer 506 described above, the passivation layer 518 can be a single layer, a composite layer, a double layer, multiple layers, or other combinations thereof. Form, depending on the needs. Referring to the dashed line 516, in an embodiment, the passivation layer 518 may have a tantalum nitride layer disposed on the tantalum oxide or reversed as a two-layer structure on the source and drain electrodes 510, 512. As indicated by the dotted line 516. The tantalum oxide layer and the tantalum nitride layer (or a niobium oxynitride layer) may be fabricated by the process 300 as described above, or the tantalum oxide layer and the tantalum nitride layer may also be used to form a gate as described above. The process of insulating layer 506 is formed. The tantalum oxide and/or tantalum nitride layer can be produced by providing a mixed gas having a sulfur-based gas and an inert gas such as argon, and having no hydrogen gas. Alternatively, the passivation layer may be a tantalum oxide single layer or a tantalum nitride single layer.

FIG. 5B illustrates an embodiment of a metal oxide thin film transistor element 550 that can be used in accordance with an embodiment of the present invention. The metal oxide thin film transistor element 550 may have a structure similar to that of the low temperature polysilicon thin film transistor element 500 described above in connection with FIG. 5A, except that the material of the active via 508 is different. Metal oxide thin film transistor element 550 includes an active channel 530 fabricated from a metal containing layer. Suitable examples of the active channel 530 formed on the metal oxide thin film transistor element 550 include, inter alia, indium gallium zinc oxide (InGaZnO), indium gallium zinc oxide (InGaZnON), zinc oxide (ZnO), zinc oxynitride (ZnON). ), zinc tin oxide (ZnSnO), cadmium tin oxide (CdSnO), gallium tin oxide (GaSnO), titanium tin oxide (TiSnO), copper aluminum oxide (CuAlO), beryllium copper oxide (SrCuO), Beryllium copper oxide (LaCuOS), gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN) or indium gallium aluminum nitride (InGaAlN). In a particular embodiment, active channel 530 is an indium gallium zinc oxide (IGZO) layer. Similarly, the gate insulating layer 506 and Passivation layer 518 can also be in the form of a single layer, a composite layer, a double layer, multiple layers, or other combinations of the foregoing, as desired. In one example, the passivation layer 518 and the gate insulating layer 506 can be a two-layer structure having a tantalum nitride layer disposed on the tantalum oxide.

When a substantially hydrogen-free tantalum oxide layer made of an argon dilution gas is used in a metal oxide thin film transistor element, the metal oxide thin film transistor element can have improved electrical performance. For example, both the startup voltage V _on (turn on voltage) and the sub-threshold voltage swing value (S value) are significantly reduced. In one example, V _{on is} reduced from about -5.5 V to about -0.25 V. The S value is reduced from approximately 0.7 V/decade to approximately 0.4 V/decade. On-current (I _on) decreased from about 3.3 × 10 ^-4 amperes (A) to about 1.4 × 10 ^-4 A. The shutdown current (I _off ) is reduced from about 4.8 x 10 ^-12 A to about 1.4 x 10 ^-13 A. The carrier mobility (Mo) increased from about 9.8 cm ² /(V.s) to about 9.9 cm ² /(V.s).

FIG. 6 illustrates an embodiment of a metal oxide thin film transistor element 600 that can be used in accordance with an embodiment of the present invention. The metal oxide thin film transistor element 600 may have a structure similar to that of the metal oxide thin film transistor element 550 described above in connection with FIG. 5B. The metal oxide thin film transistor element 600 also includes an active channel 530 fabricated from a metal-containing layer. Suitable examples of the active channel 530 formed on the metal oxide thin film transistor element 600 include indium gallium zinc oxide (InGaZnO), indium gallium zinc oxide (InGaZnON), zinc oxide (ZnO), and zinc oxynitride (ZnON). ), zinc tin oxide (ZnSnO), cadmium tin oxide (CdSnO), gallium tin oxide (GaSnO), titanium tin oxide (TiSnO), copper aluminum oxide (CuAlO), beryllium copper oxide (SrCuO), Beryllium copper oxide (LaCuOS), gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), or indium gallium aluminum nitride (InGaAlN). In addition, an upper interface 540 and a lower interface 542 are in contact with the active channel 530 and have film properties that are substantially free of hydrogen. The upper interface 540 and the lower interface 542 are made of a material that does not contain hydrogen. For example, the lower interface 542 is formed between the active channel 530 and the gate insulating layer 506. In this case, the gate insulating layer 506 may be formed of a tantalum oxide layer substantially free of hydrogen, as described above in connection with the thin film transistor element shown in Figures 5A-5B. In an embodiment in which the gate insulating layer 506 is disposed in a two-layer structure, the gate insulating layer 506 may have a tantalum nitride layer disposed on the substrate 502, and is substantially free of hydrogen disposed on the tantalum nitride layer. An oxide layer that is in contact with the active channel 530. Similarly, an upper interface 540 is formed between the active channel 530 and the passivation layer 518, defined by the opening of the source-drain channel 532. The upper interface 540 can also optionally be formed from a layer of germanium oxide that is substantially free of hydrogen, as described above in connection with the thin film transistor elements illustrated in Figures 5A-5B. In the embodiment in which the passivation layer 518 is configured as a two-layer structure, the passivation layer 518 may have a germanium oxide layer substantially free of hydrogen, disposed on the active channel 530 in contact with the active channel 530, and disposed substantially free of A tantalum nitride layer on the hydrogen oxide layer.

Alternatively, additional layers may be formed on the interfaces 542, 540 as an interface protective layer. In one embodiment, an etch stop layer can also be used as an interface protection layer formed on interfaces 542, 540 to maintain the interface substantially free of hydrogen. Similarly, in one example, the interface protective layer is a germanium oxide layer substantially free of hydrogen, such as the above-described thin film electrowinning shown in FIG. 5A-5B. A description of the body components. In another example, the interface protective layer is a metal-containing dielectric layer such as tantalum nitride (TaN), titanium nitride (TiN), tungsten nitride (WN), copper nitride (CuN), and any other substantially Suitable materials that do not contain hydrogen (eg, have the lowest hydrogen content).

Maintaining the contact of the substantially hydrogen free interface 540, 542 with the active channel 530 is believed to reduce the likelihood of hydrogen attacking the active channel, thereby obtaining a high quality interface to improve the electrical conductivity of the metal oxide thin film transistor component 600. Sexual performance.

It is to be noted that the tantalum nitride layer used in the present application can also be obtained by other processes or techniques suitable in the art.

Thus, the methods described herein improve the electronic mobility, stability, and uniformity of electronic components by minimizing the hydrogen content of a germanium containing layer to improve component performance.

In conclusion, the present invention has been disclosed in the above preferred embodiments, and is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

102, 502‧‧‧ substrate

104‧‧‧ dielectric layer

106‧‧‧gate dielectric layer

108‧‧‧Polysilicon channel layer

109a‧‧‧ source area

109b‧‧‧Bungee Area

109c‧‧‧Channel area

110a, 110b‧‧‧ Component connection

112‧‧‧Insulation

114‧‧‧gate electrode

150‧‧‧Thin-film transistor components

200‧‧‧ chamber

202‧‧‧ cavity wall

204‧‧‧ cavity bottom

206‧‧‧Processing space

208‧‧‧ openings

209‧‧‧vacuum pump

210‧‧‧ gas distribution board

211‧‧‧ hole

212‧‧‧ cavity cover

214‧‧‧suspension

216‧‧‧Central support

218‧‧‧ upper surface

220‧‧‧ gas source

222‧‧‧RF power source

224‧‧‧Remote plasma source

230‧‧‧Substrate support assembly

231‧‧‧RF return belt

232‧‧‧Substrate receiving surface

233‧‧‧ shadow frame

234‧‧‧Main trunk

236‧‧‧lifting system

238‧‧‧Sale

239‧‧‧ Heating and / or cooling elements

250‧‧‧ downstream surface

300‧‧‧Sedimentation process

302, 304, 306, 308‧ ‧ steps

402‧‧‧Amorphous layer

404‧‧‧Dehydrogenated amorphous layer

406‧‧‧ Polycrystalline layer

500‧‧‧Thin-film transistor components

504‧‧‧gate electrode layer

506‧‧‧ gate insulation

508, 530‧‧‧ active channel

510‧‧‧Source electrode

511, 513‧‧ ‧ active layer

512‧‧‧汲electrode

514‧‧‧etching termination

516, 520‧‧‧ dotted line

518‧‧‧ Passivation layer

532‧‧‧Source-bungee channel

540‧‧‧Upper interface

542‧‧‧lower interface

550, 600‧‧‧Metal oxide thin film transistor components

Figure 1 is a cross-sectional view showing the structure of a thin film transistor element.

2 is a cross-sectional view showing a processing chamber that can be used to deposit an amorphous germanium layer in accordance with an embodiment of the present invention.

3 is a manufacturing flow diagram showing an embodiment of a method of forming an amorphous germanium layer that can be used in an element structure to be subsequently converted into a polysilicon layer. Figure.

4A-4D are schematic views showing the steps of an embodiment of an element structure having an amorphous germanium layer for converting an amorphous germanium layer into a poly germanium layer according to an embodiment of the present invention.

5A-5B are schematic cross-sectional views of a thin film transistor element in accordance with an embodiment.

Figure 6 is a schematic cross-sectional view of a thin film transistor according to an embodiment.

500‧‧‧Thin-film transistor components

502‧‧‧Substrate

504‧‧‧gate electrode layer

506‧‧‧ gate insulation

508‧‧‧ active channel

510‧‧‧Source electrode

511, 513‧‧ ‧ active layer

512‧‧‧汲electrode

514‧‧‧etch stop layer

516, 520‧‧‧ dotted line

518‧‧‧ Passivation layer

Claims (20)

A method of forming a germanium layer on a substrate, comprising: transporting a substrate into a processing chamber; providing a mixed gas to the processing chamber, the mixed gas having a germanium-based gas, an inert gas, and substantially free Hydrogen, the volumetric flow rate per unit substrate surface area of the inert gas of the mixed gas is about 1.8 times to about 79 times the volume flow rate per unit substrate surface area of the bismuth-based gas; applying a radio frequency power to mix the mixture The gas is excited into a plasma; and an amorphous layer is formed on the substrate in the presence of the plasma. The method of claim 1, further comprising: heat treating the substrate in situ in the processing chamber to a temperature between about 450 degrees Celsius and about 550 degrees Celsius. The method of claim 2, further comprising: laser annealing the amorphous germanium layer to form a poly germanium layer. The method of claim 3, wherein the step of laser annealing further comprises: heating the substrate to a temperature between about 100 degrees Celsius and about 1500 degrees Celsius. The method of claim 1, wherein the step of applying the RF power further comprises: providing one of the RF powers less than 1500 watts. The method of claim 1, wherein the step of providing the mixed gas further comprises maintaining a process pressure between about 0.5 Torr and about 5 Torr. A method of forming a tantalum oxide layer, comprising: providing a mixed gas to a processing chamber, the mixed gas having a germanium-based gas, an inert gas, and an oxygen-containing gas, the mixed gas of the inert gas per unit The volumetric flow rate of the substrate surface area is about 11 times to about 80 times the volume flow rate per unit substrate surface area of the cerium-based gas; applying a radio frequency power to excite the mixed gas into a plasma; and forming a cerium oxide Layered on the substrate. The method of claim 7, wherein the sulfhydryl gas comprises decane. The method of claim 8, wherein the oxygen-containing gas comprises oxygen. The method of claim 8, wherein the oxygen-containing gas comprises nitrous oxide. The method of claim 7, wherein the sulfhydryl gas comprises tetraethoxy decane. The method of claim 11, wherein the oxygen-containing gas comprises nitrous oxide. The method of claim 7, wherein the volume flow rate per unit substrate surface area of the inert gas of the mixed gas is about 0.6 times to about 1.7 of the volume flow rate per unit substrate surface area of the oxygen-containing gas. Times. The method of claim 13, wherein the sulfhydryl gas comprises decane. The method of claim 14, wherein the oxygen is contained The gas includes oxygen or nitrous oxide. The method of claim 13, wherein the volume flow rate per unit substrate surface area of the oxygen-containing gas of the mixed gas is about 11 times to about the volume flow rate per unit substrate surface area of the sulfonium-based gas. 82 times. The method of claim 7, wherein a volume flow rate per unit substrate surface area of the oxygen-containing gas of the mixed gas is about 11 times to about a volume flow rate per unit substrate surface area of the sulfhydryl gas. 82 times. A metal oxide thin film transistor component, comprising: a substrate; a gate insulating layer disposed on the substrate, wherein the gate insulating layer comprises a germanium oxide layer substantially free of hydrogen; an active channel is disposed On the gate insulating layer, wherein the active channel comprises indium gallium zinc oxide (InGaZnO), indium gallium zinc oxide (InGaZnON), zinc oxide (ZnO), zinc oxynitride (ZnON), zinc tin oxide ( ZnSnO), cadmium tin oxide (CdSnO), gallium tin oxide (GaSnO), titanium tin oxide (TiSnO), copper aluminum oxide (CuAlO), beryllium copper oxide (SrCuO), beryllium copper sulfur oxide (LaCuOS) And at least one of gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), or indium gallium aluminum nitride (InGaAlN); a source-drain electrode disposed at the And a passivation layer disposed on the source-drain electrode layer, wherein the passivation layer comprises a germanium oxide layer substantially free of hydrogen. Metal oxide film electric as described in claim 18 a crystal element, wherein the substantially hydrogen-free germanium oxide layer of the gate insulating layer or the substantially hydrogen-free germanium oxide layer of the passivation layer is formed by: providing a mixed gas to a process In the chamber, the mixed gas has a ruthenium-based gas, an inert gas and an oxygen-containing gas, and the volume flow rate per unit substrate surface area of the inert gas of the mixed gas is the volume per unit substrate surface area of the ruthenium-based gas. The flow rate is from about 11 times to about 80 times; and a radio frequency power is applied to excite the mixed gas into a plasma; and the substantially hydrogen-free tantalum oxide layer is formed on the substrate. A metal oxide thin film transistor device includes: a substrate; and an active channel disposed between the source-drain electrode and a gate insulating layer on the substrate, wherein an interface is formed on the active channel and the Between the gate insulating layers, the interface includes a dielectric surface that is substantially free of hydrogen.