TW201311133A - Electromagnetic shielding method and product by the same - Google Patents

Abstract

An electromagnetic shielding method is provided, which comprises: providing a substrate; depositing a insulation layers on the substrate by physical vacuum deposition, during deposition of the insulation layer, the targets are made of Si, N2 and O2 used as reaction gases, the insulation layer is Si-O-N layer; depositing a conduction layers on the insulation layer by physical vacuum deposition, during deposition of the insulation layer, the targets made of one material selected from the group consisting of Cu, Ni, Al or Ag. A product manufactured by the method is also provided.

Description

Electromagnetic mask method and product

The invention relates to an electromagnetic masking method and an article thereof.

Conventional techniques generally employ a metal cover, a metal composite layer or a metal composite mask or a metal fiber composite mask combined with a metal foil to control electromagnetic interference. However, the above-mentioned masks all have the following disadvantages: large space occupation, high production cost, and difficulty in achieving seamless mounting between the mask and the printed circuit board (PCB) or the flexible wiring board (FPC) during installation, thus causing the mask Inefficient, the heat generated by the electronic components on the PCB or FPC board is difficult to dissipate, making the electronic components unstable and even damaging the electronic components.

An electromagnetic insulating layer can be realized by directly depositing a resin insulating layer on a PCB board or an FPC board, and then plating or electrolessly plating a metal layer on the insulating layer. However, in order to ensure a good bonding force between the resin insulating layer and the PCB board or the FPC board, and to avoid peeling or cracking of the insulating layer, the viscosity value of the resin to be used is strictly limited. The resin which satisfies the above viscosity requirements is limited to certain special organic resins, and these special organic resin components are numerous, complicated in structure, and difficult to manufacture. Further, the insulating layer has a large thickness (it is difficult to control at the nanometer level), and thus has an adverse effect on heat dissipation of the electronic component. In addition, the plating or electroless metal plating layer is highly polluting to the environment.

In view of this, the present invention provides an electromagnetic masking method.

In addition, the present invention also provides an article produced by the above electromagnetic masking method.

An article comprising a substrate, an insulating layer formed on the substrate, and a conductive layer formed on the insulating layer, the insulating layer being a germanium-oxygen-nitrogen layer, the conductive layer being a copper layer, a nickel layer, and an aluminum layer Or silver layer.

An electromagnetic mask method includes the following steps:

Providing a substrate;

The vacuum coating method is adopted, the ruthenium target is used as a target, and oxygen and nitrogen are used as reaction gases to form an insulating layer on the substrate, and the insulating layer is a 矽-oxygen-nitrogen layer;

A conductive coating is formed on the insulating layer by using a vacuum coating method, one of a copper target, a nickel target, an aluminum target, and a silver target, and the conductive layer is a copper layer, a nickel layer, an aluminum layer or a silver layer.

The electromagnetic mask method is simple and quick, has little environmental pollution, and the material forming the insulating layer is simple and easy to obtain.

Since the thickness of the insulating layer and the conductive layer formed by vacuum coating is small, the heat generated by the electronic component can be quickly dissipated, and the stability of the performance of the electronic component is improved. On the other hand, the insulating layer and the conductive layer occupy a small space and are light in weight.

In addition, the insulating layer formed by the vacuum coating method and the conductive layer and the substrate have a good bonding force, which can prevent the insulating layer and/or the conductive layer from being peeled off or cracked during use to reduce the electromagnetic shielding performance of the product. . The insulating layer and the conductive layer are uniformly deposited at the plane, the recess and the crease, and can be seamlessly combined with the substrate, thus improving the electromagnetic shielding performance of the substrate.

Referring to FIG. 1 , an electromagnetic mask method according to a preferred embodiment of the present invention mainly includes the following steps:

A substrate 11 is provided. The substrate 11 can be a printed circuit board or a flexible circuit board, and can also be a housing of a portable electronic product such as a mobile phone, a digital camera, and a notebook computer.

When the base 11 is a printed circuit board or a flexible circuit board, at least one electronic component 112 is formed on the base 11.

The surface of the substrate 11 is subjected to plasma cleaning to remove the oil-stained substrate on the surface of the substrate 11, and to improve the bonding force between the surface of the substrate 11 and the subsequent plating. Referring to FIG. 2, a vacuum coater 100 is provided. The vacuum coater 100 includes a coating chamber 20 and a vacuum pump 30 connected to the coating chamber 20. The vacuum pump 30 is used to evacuate the coating chamber 20. The coating chamber 20 is provided with a turret (not shown), a counter target 22 disposed opposite to each other, and a second metal target 23 disposed opposite to each other. The turret drives the base body 11 to revolve along a circular trajectory 21, and the base body 11 also rotates when revolving along the trajectory 21. A gas source passage 24 is provided at each end of each of the target 22 and each of the metal targets 23, and the gas enters the coating chamber 20 through the gas source passage 24. The material of the metal target 23 is copper, nickel, aluminum or silver.

The specific operation and process parameters of the plasma cleaning may be: fixing the substrate 11 to the rotating frame of the coating chamber 20 of the vacuum coating machine 100, and vacuuming the coating chamber 20 to 1.4×10 ^-3 to 2.7×10 ^{-3 .} Pa, then argon gas (purity of 99.999%) having a flow rate of about 100 to 400 sccm (standard state ML/min) is introduced into the coating chamber 20, and a bias of -200 to -500 V is applied to the substrate 11, to the substrate 11 Or the surface of the substrate 11 and the electronic component 112 is plasma-cleaned, and the cleaning time is 10-20 min.

The insulating layer 13 is sputtered on the surface of the substrate 11 after plasma cleaning by a magnetron sputtering method. The insulating layer 13 is a bismuth-oxygen-nitrogen (Si-O-N) layer. Sputtering the insulating layer 13 is performed in the vacuum coater 100. Open the target 22 and set the power of the target 22 to 5~8kw; use oxygen and nitrogen as the reaction gas, adjust the flow rate of oxygen to 50~200sccm and the flow rate of nitrogen to 80~300sccm, and adjust the argon gas as the working gas. The flow rate of argon gas is 100~300sccm. During sputtering, a bias voltage of -100 to -300 V is applied to the substrate 11, and the coating chamber 20 is heated to a temperature of 20 to 80 ° C (ie, a coating temperature of 20 to 80 ° C), and the coating time is 15 to 35 minutes. The insulating layer 13 has a thickness of 0.8 to 5 μm.

When the substrate 11 is a printed circuit board or a flexible wiring board, the insulating layer 13 is deposited on the surface of the electronic component 112 and the surface of the substrate 11 such that the electronic component 112 is enclosed in the insulating layer 13.

A conductive layer 15 is sputtered on the insulating layer 13 by magnetron sputtering. The conductive layer 15 is a copper layer, a nickel layer, an aluminum layer or a silver layer. The metal target 23 is turned on, and the power of the metal target 23 is set to 10 to 15 kW; and the flow rate of the argon gas is adjusted to 100 to 300 sccm using argon gas as the working gas. During sputtering, a bias voltage of -100 to -300 V is applied to the substrate 11, and the temperature of the coating chamber 20 is maintained at 20 to 80 ° C (that is, the coating temperature is 20 to 80 ° C), and the coating time is 3 to 20 minutes.

It can be understood that if only a part of the base 11 is subjected to electromagnetic shielding treatment, a shielding fixture (not shown) may be used to shield the area that does not require the electromagnetic mask.

It can be understood that the insulating layer 13 and the conductive layer 15 can also be formed by vacuum evaporation, arc plasma plating or the like.

The electromagnetic mask method is simple and quick, has little environmental pollution, and the material forming the insulating layer 13 is simple and easy to obtain.

An article 10 produced by the above electromagnetic masking method includes a substrate 11, an insulating layer 13 formed on the substrate 11, and a conductive layer 15 formed on the insulating layer 13.

The base 11 is a printed circuit board or a flexible circuit board, and can also be a housing of a portable electronic product such as a mobile phone, a digital camera, and a notebook computer.

When the substrate 11 is a printed circuit board or a flexible circuit board, at least one electronic component 112 is formed on the substrate 11, and the insulating layer 13 is deposited on the surface of the electronic component 112 and the surface of the substrate 11 so that The electronic component 112 is enclosed within the insulating layer 13.

The insulating layer 13 is a yttrium-oxygen-nitrogen layer. The insulating layer 13 has a thickness of 0.8 to 5 μm, preferably 2 to 3 μm.

The conductive layer 15 is a copper layer, a nickel layer, an aluminum layer or a silver layer. The thickness of the conductive layer 15 is preferably completely covering the insulating layer 13, and is preferably 0.5 to 2 μm, and more preferably 1 to 2 μm.

The insulating layer 13 and the conductive layer 15 are formed by vacuum plating.

Since the thickness of the insulating layer 13 and the conductive layer 15 formed by vacuum coating is small, heat generated by the electronic component 112 can be quickly dissipated, and the performance of the electronic component 112 is improved. On the other hand, the insulating layer 13 and the conductive layer 15 occupy a small space and are light in weight.

In addition, the insulating layer 13 and the conductive layer 15 formed by the vacuum coating method have a good bonding force with the substrate 11 and the electronic component 112, so that the insulating layer 13 and/or the conductive layer 15 can be prevented from occurring during use. Peeling or cracking reduces the electromagnetic masking properties of the article 10. The insulating layer 13 and the conductive layer 15 are uniformly deposited at the plane, the recess and the crease, and can be seamlessly bonded to the substrate 11, thus further improving the electromagnetic shielding performance of the substrate 11.

10. . . product

11. . . Matrix

112. . . Electronic component

13. . . Insulation

15. . . Conductive layer

100. . . Vacuum coating machine

20. . . Coating chamber

twenty one. . . Trajectory

twenty two. . . Target

twenty three. . . Metal target

twenty four. . . Air source channel

30. . . Vacuum pump

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view of an article of a preferred embodiment of the present invention.

2 is a schematic view of a vacuum coater according to a preferred embodiment of the present invention.

10. . . product

11. . . Matrix

112. . . Electronic component

13. . . Insulation

15. . . Conductive layer

Claims (11)

An article comprising a substrate, the improvement comprising: the article further comprising an insulating layer formed on the substrate and a conductive layer formed on the insulating layer, the insulating layer being a germanium-oxygen-nitrogen layer, the conductive layer being A copper layer, a nickel layer, an aluminum layer or a silver layer. The article of claim 1, wherein the insulating layer and the conductive layer are formed by vacuum coating. The article of claim 1, wherein the insulating layer has a thickness of 0.8 to 5 μm. The article of claim 3, wherein the insulating layer has a thickness of 2 to 3 μm. The article of claim 1, wherein the conductive layer has a thickness of 0.5 to 2 μm. The article of claim 5, wherein the conductive layer has a thickness of 1 to 2 μm. The article of claim 1, wherein the substrate is a printed circuit board or a flexible circuit board. The article of claim 7, wherein the substrate is formed with at least one electronic component, the insulating layer and the conductive layer being deposited on a surface of the electronic component and a surface of the substrate, the electronic component being closed Within the insulating layer. An electromagnetic mask method includes the following steps:
Providing a substrate;
The vacuum coating method is adopted, the ruthenium target is used as a target, and oxygen and nitrogen are used as reaction gases to form an insulating layer on the substrate, and the insulating layer is a 矽-oxygen-nitrogen layer;
A conductive coating is formed on the insulating layer by using a vacuum coating method, one of a copper target, a nickel target, an aluminum target, and a silver target, and the conductive layer is a copper layer, a nickel layer, an aluminum layer or a silver layer. The electromagnetic shielding method according to claim 9, wherein the method for forming the insulating layer is: using a magnetron sputtering coating method, setting a power of the target to 5 to 8 kw, using oxygen as a reaction gas, and oxygen. The flow rate is 50~200sccm, argon gas is used as working gas, the flow rate of argon gas is 100~300sccm, the bias voltage applied to the substrate is -100~-300V, the coating temperature is 20~80°C, and the coating time is 15~35min. . The electromagnetic shielding method according to claim 9, wherein the method for forming the conductive layer is: using a magnetron sputtering coating method, setting a power of a copper target, a nickel target, an aluminum target or a silver target to 10~ 15kw, argon gas is used as working gas, the flow rate of argon gas is 100~300sccm, the bias voltage applied to the substrate is -100~-300V, the coating temperature is 20~80°C, and the coating time is 3~20min.