CN102958339A - Electromagnetic shielding method and product - Google Patents
Electromagnetic shielding method and product Download PDFInfo
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- CN102958339A CN102958339A CN 201110239732 CN201110239732A CN102958339A CN 102958339 A CN102958339 A CN 102958339A CN 201110239732 CN201110239732 CN 201110239732 CN 201110239732 A CN201110239732 A CN 201110239732A CN 102958339 A CN102958339 A CN 102958339A
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Abstract
The invention provides an electromagnetic shielding method. The method includes the steps: providing a substrate; forming an insulating layer on the substrate according to the vacuum coating method by taking a silicon target as a target material and taking oxygen and nitrogen as reaction gases, wherein the insulating layer is a silicon-oxygen-nitrogen layer; and forming a conductive layer on the insulating layer according to the vacuum coating method by taking one of a copper target, a nickel target, an aluminum target and a silver target as the target material, wherein the conductive layer is a copper layer, a nickel layer, an aluminum layer or a silver layer. The invention further provides a product made by the electromagnetic shielding method.
Description
Technical field
The present invention relates to a kind of electromagnetic shielding method and goods thereof.
Background technology
Prior art usually adopts metal housing, deposits plastics composite shield cover metal level or that be combined with sheet metal or the metallic fiber composite shield cover is controlled electromagnetic interference.Yet, all there is following shortcoming in above-mentioned radome: institute takes up space greatly, production cost is higher, be difficult to realize seamless installation between radome and printed circuit board (PCB) (PCB) or the flexible circuit board (FPC) when installing, so cause shield effectiveness low, the heat that electronic component on pcb board or the FPC plate produces is difficult to distribute, and so that the electronic component service behaviour is unstable, even damage electronic component.
Direct precipitation resin insulating barrier on pcb board or FPC plate is electroplated or the chemical plating metal layer on this insulating barrier again, can realize electromagnetic shielding.But, in order to guarantee between this resin insulating barrier and pcb board or the FPC plate good adhesion is arranged, avoid insulating barrier to peel off or the phenomenon such as be full of cracks, the viscosity number of employed resin there is strict restriction.Be only limited to some special organic resin and can satisfy the resin that above-mentioned viscosity requires, these special organic resin compositions are many, complex structure, be difficult to manufacturing.In addition, the thickness of this insulating barrier is large (being difficult to be controlled at Nano grade), thereby there is harmful effect in the heat radiation of electronic component.In addition, plating or chemical plating metal layer are larger to the pollution of environment.
Summary of the invention
Given this, the invention provides a kind of electromagnetic shielding method.
In addition, the present invention also provides a kind of goods that make via above-mentioned electromagnetic shielding method.
A kind of goods comprise matrix, are formed at the insulating barrier on this matrix and are formed at conductive layer on this insulating barrier that this insulating barrier is silicon-oxygen-nitrogen layer, and this conductive layer is for being copper layer, nickel dam, aluminium lamination or silver layer.
A kind of electromagnetic shielding method, it comprises the steps:
Matrix is provided;
Adopt Vacuum Coating method, take silicon target as target, take oxygen and nitrogen as reacting gas, form an insulating barrier on matrix, this insulating barrier is silicon-oxygen-nitrogen layer;
Adopt Vacuum Coating method, a kind of as target in copper target, nickel target, aluminium target and the silver-colored target forms a conductive layer on this insulating barrier, and this conductive layer is copper layer, nickel dam, aluminium lamination or silver layer.
Described electromagnetic shielding method simple and fast, almost do not have an environmental pollution, and form the material of this insulating barrier simple, be easy to obtain.
Because the described insulating barrier that the mode by vacuum coating forms and the thickness of conductive layer are less, the heat that electronic component is produced distributes fast, has improved the stability of electronic component performance.On the other hand, the shared space of this insulating barrier and conductive layer is little, and quality is light.
In addition, have good adhesion between the insulating barrier that forms with vacuum coating method and conductive layer and the matrix, can avoid this insulating barrier in use and/or conductive layer to peel off or chap and reduce the capability of electromagnetic shielding of goods.Described insulating barrier and conductive layer at the place, plane, recess and crease place deposition evenly, and can accomplish and the matrix seamless combination, so improved the capability of electromagnetic shielding of matrix.
Description of drawings
Fig. 1 is the cutaway view of a preferred embodiment of the present invention goods.
Fig. 2 is the schematic diagram of a preferred embodiment of the present invention vacuum coating equipment.
The main element symbol description
| Goods | 10 |
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11 |
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112 |
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13 |
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15 |
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100 |
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20 |
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21 |
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22 |
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| The source of the |
24 |
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30 |
Following embodiment further specifies the present invention in connection with above-mentioned accompanying drawing.
Embodiment
See also Fig. 1, the present invention's one better embodiment electromagnetic shielding method mainly comprises the steps:
One matrix 11 is provided, and this matrix 11 can be printed circuit board (PCB) or flexible circuit board, also can be the housing of the portable type electronic products such as mobile phone, digital camera and notebook computer.
When described matrix 11 is printed circuit board (PCB) or flexible circuit board, be formed with at least one electronic component 112 on the described matrix 11.
Argon plasma is carried out on the surface of matrix 11 clean, with the greasy dirt matrix on removal matrix 11 surfaces, and the adhesion of improving matrix 11 surfaces and subsequent plating layer.In conjunction with consulting Fig. 2, a vacuum coating equipment 100 is provided, this vacuum coating equipment 100 comprises a coating chamber 20 and is connected in a vacuum pump 30 of coating chamber 20, vacuum pump 30 is in order to vacuumize coating chamber 20.Two metallic targets 23 that are provided with pivoted frame (not shown), two silicon targets 22 that are oppositely arranged in this coating chamber 20 and are oppositely arranged.Pivoted frame band kinetoplast 11 is along 21 revolution of circular track, and matrix 11 also rotation along track 21 revolution the time.The two ends of each silicon target 22 and each metallic target 23 are equipped with source of the gas passage 24, and gas enters in the described coating chamber 20 through this source of the gas passage 24.Wherein, the material of described metallic target 23 is copper, nickel, aluminium or silver.
Concrete operations and technological parameter that this plasma cleans can be: matrix 11 is fixed on the pivoted frame of coating chamber 20 of vacuum coating equipment 100, this coating chamber 20 is evacuated to 1.4 * 10
-3~ 2.7 * 10
-3Pa, then in coating chamber 20, pass into the argon gas (purity is 99.999%) that flow is about 100 ~ 400sccm (standard state ml/min), and apply-200 ~-500V be biased in matrix 11, argon plasma is carried out on the surface of matrix 11 or matrix 11 and electronic component 112 clean, scavenging period is 10 ~ 20min.
Adopt the magnetron sputtering embrane method, the matrix 11 surperficial sputter insulating barriers 13 after cleaning through argon plasma.This insulating barrier 13 is silicon-oxygen-nitrogen (Si-O-N) layer.This insulating barrier 13 of sputter carries out in described vacuum coating equipment 100.Open silicon target 22, and the power of setting silicon target 22 is 5 ~ 8kw; Take oxygen and nitrogen as reacting gas, the flow of regulating oxygen is that the flow of 50 ~ 200sccm and nitrogen is 80 ~ 300sccm, and take argon gas as working gas, the flow of regulating argon gas is 100 ~ 300sccm.During sputter, to matrix 11 apply-100 ~-bias voltage of 300V, and to heat described coating chamber 20 to temperature be 20 ~ 80 ℃ (being that coating temperature is 20 ~ 80 ℃), the plated film time is 15 ~ 35min.The thickness of this insulating barrier 13 is 0.8 ~ 5 μ m.
When described matrix 11 was printed circuit board (PCB) or flexible circuit board, described insulating barrier 13 was deposited on the surface of described electronic component 112 and the surface of matrix 11, so that electronic component 112 is closed in the described insulating barrier 13.
Adopt the magnetron sputtering embrane method, sputter one conductive layer 15 on described insulating barrier 13.Described conductive layer 15 is copper layer, nickel dam, aluminium lamination or silver layer.Opening metal target 23, and the power of setting metallic target 23 is 10 ~ 15kw; Take argon gas as working gas, the flow of regulating argon gas is 100 ~ 300sccm.During sputter, to matrix 11 apply-100 ~-bias voltage of 300V, and to keep the temperature of described coating chamber 20 be 20 ~ 80 ℃ (being that coating temperature is 20 ~ 80 ℃), the plated film time is 3 ~ 20min.
Understandable, if only need carry out electromagnetic shielding when processing to the subregion of matrix 11, can adopt and cover the tool (not shown) zone that does not need electromagnetic shielding is covered.
Understandable, described insulating barrier 13 and conductive layer 15 also can form by modes such as vacuum evaporation and arc ion platings.
Described electromagnetic shielding method simple and fast, almost do not have an environmental pollution, and form the material of this insulating barrier 13 simple, be easy to obtain.
A kind of goods 10 that make via above-mentioned electromagnetic shielding method comprise a matrix 11, be formed at the insulating barrier 13 on this matrix 11 and be formed at conductive layer 15 on this insulating barrier 13.
Described matrix 11 is printed circuit board (PCB) or flexible circuit board, also can be the housing of the portable type electronic products such as mobile phone, digital camera and notebook computer.
When described matrix 11 is printed circuit board (PCB) or flexible circuit board, be formed with at least one electronic component 112 on the described matrix 11, described insulating barrier 13 is deposited on the surface of described electronic component 112 and the surface of matrix 11, so that electronic component 112 is closed in the described insulating barrier 13.
This insulating barrier 13 is silicon-oxygen-nitrogen layer.The thickness of this insulating barrier 13 is 0.8 ~ 5 μ m, is preferably 2 ~ 3 μ m.
This conductive layer 15 is copper layer, nickel dam, aluminium lamination or silver layer.The thickness of this conductive layer 15 is preferably 0.5 ~ 2 μ m to cover described insulating barrier 13 fully as good, more preferably 1 ~ 2 μ m.
This insulating barrier 13 and conductive layer 15 form by the mode of vacuum coating.
Because the described insulating barrier 13 that the mode by vacuum coating forms and the thickness of conductive layer 15 are less, the heat that electronic component 112 is produced distributes fast, has improved the stability of electronic component 112 performances.On the other hand, the shared space of this insulating barrier 13 and conductive layer 15 is little, and quality is light.
In addition, have good adhesion between the insulating barrier 13 that forms with vacuum coating method and conductive layer 15 and matrix 11, the electronic component 112, can avoid this insulating barrier 13 in use and/or conductive layer 15 to peel off or chap and reduce the capability of electromagnetic shielding of goods 10.Described insulating barrier 13 and conductive layer 15 at the place, plane, recess and crease place deposition evenly, and can accomplish and matrix 11 seamless combination, so further improved the capability of electromagnetic shielding of matrix 11.
Claims (11)
1. goods comprise matrix, it is characterized in that: these goods also comprise and are formed at the insulating barrier on this matrix and are formed at conductive layer on this insulating barrier, and this insulating barrier is silicon-oxygen-nitrogen layer, and this conductive layer is for being copper layer, nickel dam, aluminium lamination or silver layer.
2. goods as claimed in claim 1, it is characterized in that: this insulating barrier and conductive layer form by the mode of vacuum coating.
3. goods as claimed in claim 1, it is characterized in that: the thickness of this insulating barrier is 0.8 ~ 5 μ m.
4. goods as claimed in claim 3, it is characterized in that: the thickness of this insulating barrier is 2 ~ 3 μ m.
5. goods as claimed in claim 1, it is characterized in that: the thickness of this conductive layer is 0.5 ~ 2 μ m.
6. goods as claimed in claim 5, it is characterized in that: the thickness of this conductive layer is 1 ~ 2 μ m.
7. goods as claimed in claim 1, it is characterized in that: this matrix is printed circuit board (PCB) or flexible circuit board.
8. goods as claimed in claim 7 is characterized in that: be formed with at least one electronic component on this matrix, described insulating barrier and described conductive layer deposition are on the surface of described electronic component and the surface of matrix.
9. electromagnetic shielding method, it comprises the steps:
Matrix is provided;
Adopt Vacuum Coating method, take silicon target as target, take oxygen and nitrogen as reacting gas, form an insulating barrier on matrix, this insulating barrier is silicon-oxygen-nitrogen layer;
Adopt Vacuum Coating method, a kind of as target in copper target, nickel target, aluminium target and the silver-colored target forms a conductive layer on this insulating barrier, and this conductive layer is copper layer, nickel dam, aluminium lamination or silver layer.
10. electromagnetic shielding method as claimed in claim 9, it is characterized in that: the method that forms described insulating barrier is: adopt the magnetron sputtering embrane method, the power that silicon target is set is 5 ~ 8kw, take oxygen as reacting gas, the flow of oxygen is 50 ~ 200sccm, take argon gas as working gas, the flow of argon gas is 100 ~ 300sccm, the bias voltage that puts on matrix is-100 ~-300V, coating temperature is 20 ~ 80 ℃, the plated film time is 15 ~ 35min.
11. electromagnetic shielding method as claimed in claim 9, it is characterized in that: the method that forms described conductive layer is: adopt the magnetron sputtering embrane method, the power that copper target, nickel target, aluminium target or silver-colored target are set is 10 ~ 15kw, take argon gas as working gas, the flow of argon gas is 100 ~ 300sccm, the bias voltage that puts on matrix is-100 ~-300V, coating temperature is 20 ~ 80 ℃, the plated film time is 3 ~ 20min.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110239732 CN102958339A (en) | 2011-08-19 | 2011-08-19 | Electromagnetic shielding method and product |
| TW100130196A TW201311133A (en) | 2011-08-19 | 2011-08-23 | Electromagnetic shielding method and product by the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110239732 CN102958339A (en) | 2011-08-19 | 2011-08-19 | Electromagnetic shielding method and product |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102958339A true CN102958339A (en) | 2013-03-06 |
Family
ID=47766335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110239732 Pending CN102958339A (en) | 2011-08-19 | 2011-08-19 | Electromagnetic shielding method and product |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102958339A (en) |
| TW (1) | TW201311133A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103334079A (en) * | 2013-06-25 | 2013-10-02 | 苏州奕光薄膜科技有限公司 | Coating process of electronic device |
| CN104792251A (en) * | 2014-01-16 | 2015-07-22 | 中国科学院西安光学精密机械研究所 | Structure and making method of induction synchronizer shielding film |
-
2011
- 2011-08-19 CN CN 201110239732 patent/CN102958339A/en active Pending
- 2011-08-23 TW TW100130196A patent/TW201311133A/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103334079A (en) * | 2013-06-25 | 2013-10-02 | 苏州奕光薄膜科技有限公司 | Coating process of electronic device |
| CN104792251A (en) * | 2014-01-16 | 2015-07-22 | 中国科学院西安光学精密机械研究所 | Structure and making method of induction synchronizer shielding film |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201311133A (en) | 2013-03-01 |
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Application publication date: 20130306 |