TW201310667A - 太陽能電池 - Google Patents
太陽能電池 Download PDFInfo
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- TW201310667A TW201310667A TW100129530A TW100129530A TW201310667A TW 201310667 A TW201310667 A TW 201310667A TW 100129530 A TW100129530 A TW 100129530A TW 100129530 A TW100129530 A TW 100129530A TW 201310667 A TW201310667 A TW 201310667A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 32
- 230000003667 anti-reflective effect Effects 0.000 claims description 21
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- -1 GaP or GaInP Chemical compound 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Computer Hardware Design (AREA)
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- Crystallography & Structural Chemistry (AREA)
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Abstract
一種太陽能電池裝置，包括：一基板；一包含至少一p-n接面之III-V族太陽能電池結構位於基板之上；一第一半導體窗戶層位於III-V族太陽能電池結構之上；一第二半導體窗戶層位於第一半導體窗戶層之上；一抗反射層位於第二半導體窗戶層之上；一接觸層設於抗反射層之中而位於第二半導體窗戶層上；以及一電極位於接觸層之上；其中第二半導體窗戶層成分不含有鋁。
Description
本發明係關於太陽能電池裝置，尤其關於改善電性表現之太陽能電池裝置。
由於油價高漲及環保問題，太陽能電池被市場高度重視，其中又以聚光型太陽能電池最具發展潛力，聚光型太陽能電池包括主要由三五(Ⅲ－Ⅴ)族構成的太陽能電池。在不聚光的條件下，此種太陽能電池的光電轉換效率極高，極具取代傳統電力的條件。
目前一般之太陽能電池係採用將抗反射層(Anti-Reflection Coating,ARC)直接蒸鍍在窗戶層(Window layer)上之方式，形成如圖一所示之結構。此太陽能電池，包含一基板110；一包含至少一p-n接面(pn junction)之Ⅲ－Ⅴ族太陽能電池結構120位於基板110之上；一窗戶層130位於太陽能電池結構120之上；一抗反射層150(包含第一抗反射材料層151及第二抗反射材料層152)位於第一窗戶層130之上；一接觸層160設於抗反射層150之中而位於窗戶層130之上；以及一電極170位於接觸層160之上。
一種太陽能電池裝置，包括：一基板；一包含至少一p-n接面之Ⅲ－Ⅴ族太陽能電池結構位於基板之上；一第一半導體窗戶層位於Ⅲ－Ⅴ族太陽能電池結構之上；一第二半導體窗戶層位於第一半導體窗戶層之上；一抗反射層位於第二半導體窗戶層之上；一接觸層設於抗反射層之中而位於第二半導體窗戶層上；以及一電極位於接觸層之上；其中第二半導體窗戶層成分不含有鋁。
一般而言三-五族材料組成的太陽能電池有較佳的發電效果，而在評估一個三-五族(Ⅲ－Ⅴ族)材料組成的太陽能電池的元件電性，例如最大輸出功率密度(Pmd)或轉換效率(η)時，開路電壓(Voc)、短路電流密度(Jsc)、填充因子(Fill Factor,FF)特別重要。針對前述圖一結構之太陽能電池，測試其相關電性，其數據如圖二。由數據顯示，此種結構容易造成元件在高聚光(multi sun)下開路電壓(Voc)大幅衰減，數據顯示高聚光下開路電壓(Voc)由蒸鍍抗反射層150前之2.929V，降至蒸鍍抗反射層150後之2.875V，下降了0.054V，高聚光下開路電壓(Voc)明顯變差。若能改善此高聚光下開路電壓(Voc)下降的問題，元件電性將大有改善。
請參考圖三，為本發明之實施例之一的太陽能電池。首先，提供一基板210；之後依續形成一包含至少一p-n接面之Ⅲ－Ⅴ族太陽能電池結構220位於基板210之上；一第一窗戶層230位於太陽能電池結構220之上；一第二窗戶層240位於第一窗戶層230之上；一抗反射層250位於第二窗戶層240之上；一接觸層260設於抗反射層250之中而位於第二窗戶層240之上；以及一電極270位於接觸層260之上。其中基板210可以是Ge基板或GaAs基板，而包含至少一p-n接面之Ⅲ－Ⅴ族太陽能電池結構220可以是單接面太陽能電池或多接面太陽能電池。本實施例中之太陽能電池結構220以雙接面太陽能電池為例，其結構如圖三A所示，具有一靠近基板210之下電池222及一遠離基板210之上電池224，下電池222與上電池224間以一穿隧接面(tunnel junction)結構223相接合。其中下電池222由兩層具有相異電性之GaAs層222a,222b構成，而上電池由兩層具有相異電性之GaInP層224a,224b構成。穿隧接面結構223由兩層具有相異電性之AlGaAs層223a,223b構成。電性上，穿隧接面結構223與下電池222(或上電池224)形成反向串接之二極體。以本實施例而言，下電池222之GaAs層222a,222b分別是p型及n型，上電池之GaInP層224a,224b分別是p型及n型，而穿隧接面結構223之AlGaAs層223a,223b分別是n型及p型。第一窗戶層230之材料可以是AlGaAs或AlInP，厚度可以是100至700。第二窗戶層240之材料為不含鋁(Al)之半導體材料，例如可以是GaP或GaInP，厚度為低於100。第一窗戶層230及第二窗戶層240均可利用金屬有機化學氣相沈積(Metal Organic Chemical Vapor Deposition,MOCVD)法形成。抗反射層250可以包括一靠近第二窗戶層240之第一抗反射材料層251，本實施例為氧化鈦(TiO2)層，厚度為200至800 ，及一遠離第二窗戶層240之第二抗反射材料層252，本實施例為氧化鋁(Al2O3)層，厚度為300至1000。第一抗反射材料層251之氧化鈦(TiO2)層及第二抗反射材料層252之氧化鋁(Al2O3)層均可利用E-gun進行蒸鍍形成。接觸層260的材料需為一低能帶間隙(band gap)的半導體材料，以利接觸層260與電極270形成歐姆接觸(ohmic contact)，且接觸層260材料的晶格常數與第二窗戶層240的晶格常數需匹配，以確保接觸層260在MOCVD成長的品質。此接觸層260材料可由GaAs，InGaAs等半導體材料所構成；電極270的材料可以是金屬，例如選自於金、銀、鋁、銅、鎳、鍺、鈦、鉑、鈀、及鉻等所構成之材料群組。針對此結構太陽能電池，測試其相關電性，其數據如圖四及圖五，其中圖四為第二窗戶層240之材料使用GaInP之情形，而圖五為第二窗戶層240之材料使用GaP之情形。由圖四數據顯示，高聚光(multi sun)下開路電壓(Voc)由蒸鍍抗反射層250前之2.968V，降至蒸鍍抗反射層250後之2.959V，只下降了0.009V，相對於圖一結構之下降了0.054V，此結構太陽能電池在高聚光(multi sun)下開路電壓(Voc)獲得明顯改善。而由圖五數據顯示，高聚光下開路電壓(Voc)由蒸鍍抗反射層250前之2.947V，降至蒸鍍抗反射層250後之2.939V，只下降了0.008V，相對於圖一結構之下降了0.054V，此結構太陽能電池在高聚光(multi sun)下開路電壓(Voc)獲得明顯改善。由此顯示圖三所示之結構，即在第一窗戶層230上再多長一層第二窗戶層240，可使元件在高聚光下的開路電壓(Voc)不會再大幅衰減。而短路電流密度(Jsc)也維持一定水準，故而元件的電性較好。此由計算最大輸出功率密度，即最大輸出功率密度(Pmd)=開路電壓(Voc)x短路電流密度(Jsc)x填充因子(Fill Factor,FF)，可知在高聚光(multi sun)下，圖一結構在蒸鍍抗反射層前最大輸出功率密度(Pmd)=2.929x1762.083x0.892=4606.373(mW/cm2)。同樣計算可得蒸鍍抗反射層後最大輸出功率密度(Pmd)=5540.643(mW/cm2)，故而蒸鍍抗反射層後與蒸鍍抗反射層前之最大輸出功率密度(Pmd)比值為5540.643(mW/cm2)/4606.373(mW/cm2)=1.203，即最大輸出功率密度(Pmd)增加20.3%。但相對地，經由對圖四及圖五相同計算，可得知圖三所示之結構，蒸鍍抗反射層後最大輸出功率密度(Pmd)增加值分別為33.8%及33.6%，較圖一結構之20.3%大大增加。其原因在於第二窗戶層240之材料為不含鋁(Al)之半導體材料，以本發明之實施如GaP或GaInP而言，均為非含鋁(Al)之材質，利用在第一窗戶層230上增加此不含鋁(Al)之第二窗戶層240，可防止在蒸鍍抗反射層250(TiO2層及Al2O3層)過程中，第一窗戶層230的AlGaAs或AlInP中的Al元素和抗反射層250中的TiO2層起反應，否則第一窗戶層230的AlGaAs或AlInP中的Al元素和TiO2層起反應，會使第一窗戶層的Al元素氧化，導致Voc偏低。如此可以有效減緩在蒸鍍抗反射層250時對第一窗戶層230(AlGaAs或AlInP)造成的損害，達到保護元件的作用，進而提升元件的效率。基於此原理，第二窗戶層240的能帶間隙(energy band gap)並不需要比第一窗戶層230的能帶間隙(energy band gap)高，亦即第二窗戶層240的材料選擇不受限於能帶間隙之考量，可以選擇能帶間隙大於第一窗戶層230的能帶間隙之第二窗戶層240材料，也可以選擇能帶間隙不大於(即小於或等於)第一窗戶層230的能帶間隙之第二窗戶層240材料。而且第二窗戶層240的厚度儘量不要太厚，較佳地是低於200，最佳是低於100，以免吸收入射光線而降低太陽能電池之效能。此外，雖然較薄的第二窗戶層240和底下第一窗戶層230仍可能有晶格常數不匹配(lattice mismatch)之情形，但薄的第二窗戶層240較易產生彈性變形，使薄的第二窗戶層240的晶格常數和底下的第一窗戶層230較為一致。若第二窗戶層240厚度太厚，第二窗戶層240的應力變大，第二窗戶層240會回復到原來的晶格常數，晶格缺陷(defect)就會產生。故較薄的第二窗戶層240對於與第一窗戶層230間的晶格常數之不匹配有較好的容忍度。
上述實施例僅為例示性說明本發明之原理及其功效，而非用於限制本發明。任何本發明所屬技術領域中具有通常知識者均可在不違背本發明之技術原理及精神的情況下，對上述實施例進行修改及變化。因此本發明之權利保護範圍如後述之申請專利範圍所列。
110．．．基板
120．．．包含至少一p-n接面之Ⅲ－Ⅴ族太陽能電池結構
130．．．窗戶層
150．．．抗反射層
151．．．第一抗反射材料層
152．．．第二抗反射材料層
160．．．接觸層
170．．．電極
210．．．基板
220．．．包含至少一p-n接面之III-V族太陽能電池結構
230．．．第一窗戶層
240．．．第二窗戶層
250．．．抗反射層
251．．．氧化鈦(TiO2)層
252．．．氧化鋁(Al2O3)層
260．．．接觸層
270．．．電極
圖一：將抗反射層直接蒸鍍在窗戶層上之太陽能電池。
圖二：圖一之太陽能電池之電性測試數據。
圖三：本發明之太陽能電池。
圖三A：顯示圖三之太陽能電池之包含至少一p-n接面之Ⅲ－Ⅴ族太陽能電池結構。
圖四：第二窗戶層之材料使用GaInP之本發明之太陽能電池之電性測試數據。
圖五：第二窗戶層之材料使用GaP之本發明之太陽能電池之電性測試數據。
210．．．基板
220．．．包含至少一p-n接面之Ⅲ－V族太陽能電池結構
230．．．第一窗戶層
240．．．第二窗戶層
250．．．抗反射層
251．．．氧化鈦(TiO2)層
252．．．氧化鋁(Al2O3)層
260．．．接觸層
270．．．電極
Claims (10)
- 一種太陽能電池裝置，包括：一基板；一包含至少一p-n接面之III-V族太陽能電池結構位於該基板之上；一第一半導體窗戶層位於該III-V族太陽能電池結構之上；一第二半導體窗戶層位於該第一半導體窗戶層之上；一抗反射層位於該第二半導體窗戶層之上；一接觸層設於該抗反射層之中且位於第二半導體窗戶層上；以及一電極位於該接觸層之上；其中該第二半導體窗戶層成分不含有鋁。
- 如申請專利範圍第1項所述之太陽能電池裝置，其中該第一半導體窗戶層之材料為AlGaAs或AlInP。
- 如申請專利範圍第1項所述之太陽能電池裝置，其中該第二半導體窗戶層之材料為GaP或GaInP。
- 如申請專利範圍第1項所述之太陽能電池裝置，其中該第一半導體窗戶層之厚度為是100至700，及/或其中該第二半導體窗戶層之厚度為低於100。
- 如申請專利範圍第1項所述之太陽能電池裝置，其中該太陽能電池結構為單接面太陽能電池或多接面太陽能電池。
- 如申請專利範圍第1項所述之太陽能電池裝置，其中該太陽能電池結構為雙接面太陽能電池，具有一靠近該基板且由兩層具有相異電性之GaAs構成之下電池，及一遠離該基板且由兩層具有相異電性之GaInP構成之上電池。
- 如申請專利範圍第1項所述之太陽能電池裝置，其中該基板為Ge基板或GaAs基板。
- 如申請專利範圍第1項所述之太陽能電池裝置，其中該抗反射層包括一靠近該第二半導體窗戶層之氧化鈦(TiO2)層及一遠離該第二半導體窗戶層之氧化鋁(Al2O3)層。
- 如申請專利範圍第8項所述之太陽能電池裝置，其中該氧化鈦(TiO2)層之厚度為200至800，該氧化鋁(Al2O3)層之厚度為300至1000。
- 如申請專利範圍第1項所述之太陽能電池裝置，其中該第二半導體窗戶層之能隙不大於該第一半導體窗戶層之能隙。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100129530A TW201310667A (zh) | 2011-08-17 | 2011-08-17 | 太陽能電池 |
| US13/587,372 US20130042907A1 (en) | 2011-08-17 | 2012-08-16 | Solar cell device |
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| TW100129530A TW201310667A (zh) | 2011-08-17 | 2011-08-17 | 太陽能電池 |
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| TW (1) | TW201310667A (zh) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI601298B (zh) * | 2017-02-10 | 2017-10-01 | 友達光電股份有限公司 | 光伏裝置 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US10027278B2 (en) * | 2013-05-10 | 2018-07-17 | Sinton Consulting, Inc | Characterization of substrate doping and series resistance during solar cell efficiency measurement |
| DE102015120089A1 (de) * | 2015-11-19 | 2017-05-24 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips |
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| US6150603A (en) * | 1999-04-23 | 2000-11-21 | Hughes Electronics Corporation | Bilayer passivation structure for photovoltaic cells |
| US20030070707A1 (en) * | 2001-10-12 | 2003-04-17 | King Richard Roland | Wide-bandgap, lattice-mismatched window layer for a solar energy conversion device |
| US7119271B2 (en) * | 2001-10-12 | 2006-10-10 | The Boeing Company | Wide-bandgap, lattice-mismatched window layer for a solar conversion device |
| TWI366919B (en) * | 2008-09-19 | 2012-06-21 | Gintech Energy Corp | Structure of solar cell and its production method |
| TW201030991A (en) * | 2009-02-04 | 2010-08-16 | Epistar Corp | Photovoltaic device with light collecting electrode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI601298B (zh) * | 2017-02-10 | 2017-10-01 | 友達光電股份有限公司 | 光伏裝置 |
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