TW201310039A - Probe head and wafer inspecting apparatus using the same - Google Patents
Probe head and wafer inspecting apparatus using the same Download PDFInfo
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Abstract
Description
本發明是有關於一種探測頭，特別是用於晶圓檢測的探測頭。The present invention relates to a probe, particularly a probe for wafer inspection.
從發光二極體(Light Emitting Diode，LED)工作原理可知，晶圓材料是發光二極體的核心部分，事實上，發光二極體的波長、亮度、正向電壓等主要光電參數基本上取決於晶圓材料。一般而言，在晶圓未切割封裝前對單顆晶片的測試稱為晶圓檢測與探針測試，由於晶片的設計愈趨於複雜，晶圓檢測與探針測試關係到晶圓生產良率高低，已經成為整個製造過程中最關鍵的部份。According to the working principle of the Light Emitting Diode (LED), the wafer material is the core part of the light-emitting diode. In fact, the main photoelectric parameters such as the wavelength, brightness and forward voltage of the LED are basically determined. For wafer materials. In general, the test of a single wafer before the wafer is uncut is called wafer inspection and probe testing. Due to the complexity of the wafer design, wafer inspection and probe testing are related to wafer production yield. High and low, has become the most critical part of the entire manufacturing process.
舉例來說，晶圓之測試設備(test apparatus)係裝設有一探測卡(probe card)，而探測卡則具有一包含有複數個探觸端之探測針。在發光二極體晶圓之檢測程序中，必須先在受測部位處挖除部分晶圓以形成一缺口，再將銦球植入缺口中。之後，探測針再與銦球達到暫時之電性導通，再透過探測卡在測試設備與晶圓之間傳送訊號。而銦球主要可加強探測針電性導通晶圓之電流量，如此才能激發出足夠之光線強度而讓晶圓檢測裝置進行檢測。然而，此植入銦球程序係較為零碎繁鎖，因此，如何設計出晶圓檢測裝置可以簡化晶圓檢測程序之步驟，將是業界應著手研發的方向。For example, a test apparatus for a wafer is provided with a probe card, and the probe card has a probe including a plurality of probe ends. In the detection procedure of the LED wafer, a part of the wafer must be excavated at the measured portion to form a gap, and the indium ball is implanted into the gap. Afterwards, the probe pin is temporarily electrically connected to the indium ball, and then the signal is transmitted between the test device and the wafer through the probe card. The indium ball can mainly enhance the current of the probe to electrically conduct the wafer, so that sufficient light intensity can be excited to allow the wafer inspection device to detect. However, this indium ball program is more fragmented and cumbersome. Therefore, how to design a wafer inspection device can simplify the steps of the wafer inspection process, which will be the direction that the industry should start research and development.
本發明是關於一種探測頭及應用此探測頭之晶圓檢測裝置，藉以解決先前技術之晶圓檢測程序需要植入銦球之問題。The present invention relates to a probe and a wafer detecting device using the same, which solves the problem that the wafer inspection program of the prior art needs to implant an indium ball.
一實施例所揭露之探測頭，其包括一本體、多個探針、一光收集器及一光偵測器。其中，本體內部具有一導光通道，導光通道的相對二側分別具有一第一開口及一第二開口。這些探針設置在本體且相鄰第一開口。光收集器係設置在第一開口。光偵測器係設置在第二開口。A probe disclosed in an embodiment includes a body, a plurality of probes, a light collector, and a light detector. The inside of the light guiding channel has a light guiding channel, and the opposite sides of the light guiding channel respectively have a first opening and a second opening. These probes are disposed on the body and adjacent to the first opening. The light collector is disposed at the first opening. The photodetector is disposed at the second opening.
其中，這些探針係電性接觸於一光電晶圓之至少一受測部位，當受測部位發出光線後，令受測部位之光線經由光收集器進入到導光通道，再由光偵測器偵測受測部位之光線強度。Wherein, the probes are electrically contacted to at least one tested portion of an optoelectronic wafer, and when the measured portion emits light, the light of the measured portion enters the light guiding channel through the light collector, and then the light is detected. The device detects the light intensity of the part to be tested.
另一實施例所揭露之晶圓檢測裝置，其包括一治具，供光電晶圓載置於其上，治具係電性導通光電晶圓之一第一半導體層，探測頭可選擇的接觸於光電晶圓之受測部位，並且電性導通受測部位的一第二半導體層。A wafer inspection apparatus according to another embodiment includes a jig for mounting an optoelectronic wafer thereon, the jig electrically conducting a first semiconductor layer of the optoelectronic wafer, and the probe is selectively contactable A portion to be tested of the photovoltaic wafer, and electrically conducting a second semiconductor layer of the portion to be tested.
根據本發明所揭露之探測頭及應用此探測頭之晶圓檢測裝置，其功效在於以治具電性導通光電晶圓之第二半導體層，再以探測頭之多個探針電性導通光電晶圓之第一半導體層，進而在光電晶圓之受測部位處構成電性迴路而發出光線。如此，利用探測頭可直接偵測受測部位所激發之光線強度及波長，並確保通過光電晶圓之電流量。以此解決習知技術需要額外在晶圓上植入銦球才能達到相當電流量之問題，而且也減化植入銦球流程。The probe head and the wafer detecting device using the same according to the present invention have the function of electrically conducting the second semiconductor layer of the photoelectric wafer, and electrically conducting the photoelectric signal by the plurality of probes of the probe. The first semiconductor layer of the wafer, and then the electrical circuit at the measured portion of the photovoltaic wafer, emits light. In this way, the probe can directly detect the intensity and wavelength of the light excited by the measured part and ensure the amount of current passing through the optoelectronic wafer. In order to solve this problem, the prior art requires additional implantation of indium balls on the wafer to achieve a considerable amount of current, and also reduces the process of implanting the indium sphere.
再者，利用在探測頭所設置之光偵測器，讓探測頭能夠電性導通受測部位時直接收集受測部位之光線，以避免受測部位之光線因距離較遠而光線溢散、衰減，而造成光線檢測數值失真。Furthermore, by using the photodetector provided in the detecting head, the detecting head can directly collect the light of the tested part when electrically conducting the measuring part, so as to avoid the light of the measured part being separated due to the distance, and the light is scattered. Attenuation, causing distortion of the light detection value.
以上之關於本發明內容之說明及以下之實施方式之說明係用以示範與解釋本發明之原理，並且提供本發明之專利申請範圍更進一步之解釋。The above description of the present invention and the following description of the embodiments of the present invention are intended to illustrate and explain the principles of the invention.
請參閱「第1圖」至「第4圖」，「第1圖」為第一實施例之晶圓檢測裝置之立體示意圖，「第2圖」為「第1圖」之探測頭之立體示意圖，「第3圖」為「第2圖」之剖面示意圖，「第4圖」為「第1圖」之治具之剖面示意圖。Please refer to "1" to "4", "1" is a perspective view of the wafer detecting device of the first embodiment, and "2" is a schematic view of the detecting head of "Fig. 1". Figure 3 is a cross-sectional view of Figure 2 and Figure 4 is a cross-sectional view of the jig of Figure 1.
其中，上述之晶圓檢測裝置10適於檢測一光電晶圓800(wafer)，並且光電晶圓800表面受到晶圓檢測裝置10進行檢測的部位係定義成一受測部位810。光電晶圓800內部結構大致分成一第一半導體層820、一發光層830、一第二半導體層840及一基板850。而第二半導體層840配置於基板850上，發光層830配置於第二半導體層840上，第一半導體層820配置於發光層830上。The wafer detecting device 10 is adapted to detect a photovoltaic wafer 800, and the portion of the surface of the photovoltaic wafer 800 that is detected by the wafer detecting device 10 is defined as a measured portion 810. The internal structure of the optoelectronic wafer 800 is roughly divided into a first semiconductor layer 820, a light emitting layer 830, a second semiconductor layer 840, and a substrate 850. The second semiconductor layer 840 is disposed on the substrate 850, the light emitting layer 830 is disposed on the second semiconductor layer 840, and the first semiconductor layer 820 is disposed on the light emitting layer 830.
本實施例之晶圓檢測裝置10包括一治具100及一探測頭200。治具100用以承載光電晶圓800，並且治具100具有多個真空抽取口130，這些真空抽取口130可連通一真空抽取器(未繪示)，以將光電晶圓800穩固地吸附於治具100上。The wafer inspection apparatus 10 of the present embodiment includes a jig 100 and a probe 200. The jig 100 is used to carry the optoelectronic wafer 800, and the jig 100 has a plurality of vacuum extraction ports 130. The vacuum extraction ports 130 can be connected to a vacuum extractor (not shown) to firmly adhere the optoelectronic wafer 800 to Fixture 100.
再者，治具100包括至少二軌道110及至少二夾具120。這二軌道110分別設置在治具100的二相對側邊，並使各夾具120分別設置在對應的軌道110上，以使各夾具120藉由對應的軌道110而在治具100上往復位移，如此一來，讓這二夾具120可以相對移動而夾持住各種尺寸之光電晶圓800(如「第4圖」所示)。此外，在本實施例中，治具100係以四個軌道110及四個夾具120作為說明(如「第1圖」所示)，但並不以此為限。而且，每個夾具120可以在軌道110上同步移動，亦即四個夾具120可以同時間移動相同距離而夾持住光電晶圓800之四個側邊，但不以此為限，亦可設定夾具120在軌道110上分別進行不同步的移動而夾持住光電晶圓800。Furthermore, the jig 100 includes at least two tracks 110 and at least two jigs 120. The two rails 110 are respectively disposed on opposite sides of the jig 100, and the clamps 120 are respectively disposed on the corresponding rails 110, so that the clamps 120 are reciprocally displaced on the jig 100 by the corresponding rails 110. In this way, the two clamps 120 can be moved relative to each other to hold the photovoltaic wafers 800 of various sizes (as shown in FIG. 4). In addition, in the present embodiment, the jig 100 is described by four tracks 110 and four jigs 120 (as shown in FIG. 1), but is not limited thereto. Moreover, each of the clamps 120 can be synchronously moved on the track 110, that is, the four clamps 120 can simultaneously move the same distance and hold the four sides of the photoelectric wafer 800, but not limited thereto. The jig 120 performs asynchronous movement on the track 110 to hold the optoelectronic wafer 800.
特別值得注意的是，本發明之夾具120係電性連接有一外部電源900，主要的作法是在各軌道110處分別開設有一導線槽111，以使各夾具120之電線可分別穿過對應導線槽111後與外部電源900電性連接。It is particularly noted that the clamp 120 of the present invention is electrically connected to an external power supply 900. The main method is to provide a wire slot 111 at each of the rails 110 so that the wires of the clamps 120 can pass through the corresponding wire slots respectively. After 111, it is electrically connected to the external power source 900.
是以，本發明之夾具120除了可以夾持在光電晶圓800側邊，以防止光電晶圓800歪斜或移動之外，其夾具120可透過外部電源900而提供電力予光電晶圓800。主要的作法是在各夾具120之夾持部位處設置有一導電體121，導電體121可以是軟性金屬材料或導電橡膠，但不以此為限。當各夾具120夾持住光電晶圓800時，可藉由導電體121之軟質特性，防止各夾具120位移應力而直接碰撞光電晶圓800邊緣，避免光電晶圓800邊緣因應力碰撞而導致破碎、龜裂。Therefore, in addition to being clamped on the side of the optoelectronic wafer 800 to prevent the optoelectronic wafer 800 from being skewed or moved, the jig 120 of the present invention can provide power to the optoelectronic wafer 800 through the external power source 900. The main method is to provide a conductive body 121 at the clamping portion of each of the clamps 120. The electrical conductor 121 may be a soft metal material or a conductive rubber, but is not limited thereto. When each of the clamps 120 holds the optoelectronic wafer 800, the softness of the electric conductor 121 prevents the clamps 120 from being displaced and directly collides with the edge of the optoelectronic wafer 800, thereby preventing the edge of the optoelectronic wafer 800 from being broken due to stress collision. Cracked.
如此一來，以導電體121作為夾具120與光電晶圓800之間的接觸設計，以使夾具120具有彈性夾持光電晶圓800邊緣之緩衝功效，以及增加夾具120與光電晶圓800之電性接觸面積，進而提升夾具120與光電晶圓800之間的電性連接品質。是以，各夾具120分別夾持住光電晶圓800後，可透過導電體121電性導通光電晶圓800之第二半導體層840。In this way, the conductor 121 is used as the contact between the fixture 120 and the optoelectronic wafer 800, so that the fixture 120 has the buffering effect of elastically clamping the edge of the optoelectronic wafer 800, and increases the power of the fixture 120 and the optoelectronic wafer 800. The sexual contact area further enhances the electrical connection quality between the fixture 120 and the optoelectronic wafer 800. Therefore, after each of the jigs 120 holds the optoelectronic wafer 800, the second semiconductor layer 840 of the optoelectronic wafer 800 can be electrically conducted through the conductor 121.
此外，各夾具120表面可進一步進行陽極處理作業，但不包括夾具120可供導電體121設置之表面。如此，使各夾具120表面形成有絕緣效果，避免夾具120與其他工作物件發生短路問題。Further, the surface of each of the jigs 120 may be further subjected to an anodizing operation, but does not include a surface on which the jig 120 is provided for the electric conductor 121. In this way, an insulating effect is formed on the surface of each of the jigs 120 to avoid a short circuit problem between the jig 120 and other work objects.
如「第2圖」及「第3圖」所示，探測頭200包括一本體300、多個探針400、一光收集器500及一光偵測器600。其中，本體300包括一第一殼體310及一第二殼體320，本體300具有一貫穿第一殼體310與第二殼體320之導光通道330，並且第一殼體310開設有一與導光通道330通連之第一開口311，而第二殼體320則同樣開設有一與導光通道330通連之第二開口321。在本實施例中，第一殼體310及第二殼體320可以是一體成型構成本體300結構，但不以此為限。As shown in FIG. 2 and FIG. 3, the probe 200 includes a body 300, a plurality of probes 400, a light collector 500, and a light detector 600. The body 300 includes a first housing 310 and a second housing 320. The body 300 has a light guiding passage 330 extending through the first housing 310 and the second housing 320, and the first housing 310 defines a The light guide channel 330 is connected to the first opening 311, and the second housing 320 is also provided with a second opening 321 that is connected to the light guide channel 330. In this embodiment, the first housing 310 and the second housing 320 may be integrally formed to form the structure of the body 300, but not limited thereto.
再者，本體300具有一導電件340，導電件340係電性連接於外部電源900。在本實施例中，導電件340可以是環形設計，並且環繞於導光通道330周圍。Moreover, the body 300 has a conductive member 340 electrically connected to the external power source 900. In the present embodiment, the conductive member 340 may be a ring design and surround the light guide channel 330.
本發明之多個探針400係環繞設置在本體300上。詳言之，第一殼體310開設有多個定位槽，以供這些探針400分別容置於定位槽(所謂定位槽係指「第3圖」中的第一殼體300可容置探針400的空間)。需注意的是，這些探針400可以環繞在第一殼體310之第一開口311周圍，但不以此為限。The plurality of probes 400 of the present invention are circumferentially disposed on the body 300. In detail, the first housing 310 is provided with a plurality of positioning slots for the probes 400 to be respectively received in the positioning slots (the so-called positioning slots are referred to as the first housing 300 in FIG. 3). Needle 400 space). It should be noted that the probes 400 can surround the first opening 311 of the first housing 310, but are not limited thereto.
是以，這些探針400可藉由多個彈性件700與導電件340相互電性連接。詳言之，這些彈性件700分別容置於第一殼體310之對應定位槽內，並且各彈性件700之一端分別接觸於對應探針400，另一端分別接觸於導電件340，使得各彈性件700係常態推抵對應探針400，以使各探針400之尖端可保持在露出第一殼體310外部之位置。如此，藉由這些彈性件700之彈性力，以使這些探針400被彈性件700推抵而確實接觸在光電晶圓800表面。Therefore, the probes 400 can be electrically connected to each other by the plurality of elastic members 700 and the conductive members 340. In detail, the elastic members 700 are respectively received in the corresponding positioning slots of the first housing 310, and one end of each elastic member 700 is respectively contacted with the corresponding probe 400, and the other end is respectively contacted with the conductive member 340, so that each elastic The member 700 is normally pushed against the corresponding probe 400 such that the tip of each probe 400 can remain in a position exposed outside the first housing 310. Thus, the elastic force of the elastic members 700 causes the probes 400 to be pushed against the elastic members 700 to actually contact the surface of the photovoltaic wafer 800.
本發明之光收集器500係設置在第一開口311，用以收集光電晶圓800於導電後所激發出之光線。在本實施例中，光收集器500可以是一聚光透鏡或一聚光器，但不以此為限。需注意的是，為了符合光收集器500之特性需求，可以將本體300之導光通道300設計成一漸縮狀通道(如「第3圖」所示)，導光通道300由第一開口311漸縮至第二開口321。或是，將本體300之導光通道300設計成一貫穿狀通道(如「第7圖」所示)，導光通道300由第一開口311的孔徑至第二開口321的孔徑皆相同。The light collector 500 of the present invention is disposed in the first opening 311 for collecting the light excited by the photoelectric wafer 800 after being electrically conductive. In this embodiment, the light collector 500 can be a concentrating lens or a concentrator, but is not limited thereto. It should be noted that, in order to meet the characteristics of the light collector 500, the light guiding channel 300 of the body 300 can be designed as a tapered channel (as shown in FIG. 3), and the light guiding channel 300 is formed by the first opening 311. It is tapered to the second opening 321 . Alternatively, the light guiding channel 300 of the body 300 is designed as a through-channel (as shown in FIG. 7), and the light guiding channel 300 has the same aperture from the aperture of the first opening 311 to the second opening 321 .
本發明之光偵測器600係設置在第二開口321，用以偵測光電晶圓800於導電後所激發出之光線強度。在本實施例中，探測頭200更包括一分光器610、一光傳導器620及一訊號傳輸線630。其中，分光器610係透過本體300之一固定座322而定位在第二開口321處，並使光偵測器600與光傳導器620分別耦合於分光器610。分光器610係將所接收之光線分別傳導到光偵測器600及光傳導器620。光偵測器600偵測光線強度後，再透過訊號傳輸線630將光偵測器600所檢測數據回饋至一分析端(未繪示)。同樣的，光傳導器620用以將所接收之光線傳導至一光波長檢測設備(未繪示)進行光波長檢測。The photodetector 600 of the present invention is disposed in the second opening 321 for detecting the intensity of light excited by the optoelectronic wafer 800 after being electrically conductive. In this embodiment, the probe 200 further includes a beam splitter 610, a light guide 620, and a signal transmission line 630. The light splitter 610 is positioned at the second opening 321 through one of the fixing bases 322 of the body 300, and the light detector 600 and the light guide 620 are respectively coupled to the beam splitter 610. The beam splitter 610 conducts the received light to the photodetector 600 and the light guide 620, respectively. After detecting the light intensity, the photodetector 600 returns the detected data of the photodetector 600 to an analysis end (not shown) through the signal transmission line 630. Similarly, the light guide 620 is configured to conduct the received light to an optical wavelength detecting device (not shown) for optical wavelength detection.
接著，請參閱「第5圖」與「第6圖」，「第5圖」為「第1圖」之光電晶圓於晶圓檢測時之光線路徑圖，「第6圖」為「第5圖」之放大示意圖。在本實施例中，光電晶圓800係擺放在治具100上，並藉由各夾具120分別夾持住光電晶圓800後，再透過各夾具120之導電體121電性導通光電晶圓800之第二半導體層840。此時，探測頭200移動至光電晶圓800之受測部位810處，以探測頭200的複數探針400電性接觸於光電晶圓800之第一半導體層820，進而構成電性迴路並激發受測部位810處的發光層830射出光線。其中，探測頭200及治具100與光電晶圓800電性連接的同時，除可供給光電晶圓800電壓、電流外，另可測試光電晶圓800的電性項目，例如電壓、電流、電阻、逆向漏電(Ir)、電壓電流之關係、亮度(I-L)或V-L等項目，但不以此為限。此時，光線係經過光收集器500進入到導光通道330，再由被光收集器500導引至分光器610。Next, please refer to "5th" and "6th", "5th" is the light path diagram of the photoelectric wafer of "1st" in the wafer inspection, "6th" is "5th" An enlarged view of the figure. In this embodiment, the optoelectronic wafers 800 are placed on the jig 100, and the photo-wafers 800 are respectively clamped by the jigs 120, and then the electro-optical wafers are electrically conducted through the electrical conductors 121 of the jigs 120. A second semiconductor layer 840 of 800. At this time, the probe 200 moves to the tested portion 810 of the optoelectronic wafer 800, and the plurality of probes 400 of the probe 200 are electrically contacted with the first semiconductor layer 820 of the optoelectronic wafer 800, thereby forming an electrical loop and exciting The luminescent layer 830 at the portion 810 under test emits light. Wherein, the probe 200 and the jig 100 are electrically connected to the optoelectronic wafer 800, and in addition to the voltage and current of the optoelectronic wafer 800, the electrical items of the optoelectronic wafer 800, such as voltage, current, and resistance, can be tested. , reverse leakage (Ir), voltage-current relationship, brightness (IL) or VL, etc., but not limited to this. At this time, the light enters the light guiding channel 330 through the light collector 500, and is guided to the beam splitter 610 by the light collector 500.
需注意的是，分光器610係將一部份之光線導引至光偵測器600，以此檢測受測部810之光線強度。並且分光器610將另一部份之光線導引至光傳導器620(例如光纖等)，藉由光傳導器620將光線傳導至光波長檢測設備進行檢測。It should be noted that the beam splitter 610 guides a portion of the light to the photodetector 600 to detect the light intensity of the device under test 810. And the beam splitter 610 guides another portion of the light to the light guide 620 (for example, an optical fiber or the like), and the light is conducted to the light wavelength detecting device for detection by the light guide 620.
在其他實施例中，光收集器500也可是其他元件，以下將以第二實施例進行說明。請參閱「第7圖」，「第7圖」為第二實施例之晶圓檢測裝置之剖面示意圖。本實施例之晶圓檢測裝置10包括一治具100及一探測頭200。其中治具100之結構與第一實施例相似，故不再贅述。In other embodiments, the light collector 500 can be other components as will be described below with reference to the second embodiment. Please refer to FIG. 7 and FIG. 7 is a schematic cross-sectional view of the wafer detecting apparatus of the second embodiment. The wafer inspection apparatus 10 of the present embodiment includes a jig 100 and a probe 200. The structure of the jig 100 is similar to that of the first embodiment, and therefore will not be described again.
探測頭200包括一本體300、多個探針400、一光收集器500及一光偵測器600。其中探測頭200與第一實施例之差異為光收集器500可以是積分球(Luminous Flux Meter)，積分球之結構為習知之技術，故不再贅述。本實施例之光收集器500具有一入光面，入光面朝向光電晶圓800。分光器610耦合光收集器500，光偵測器600再耦合分光器610以擷取光電晶圓800之光線資訊。其中本實施例之光收集器500是以三分之二球為例，但並不以此為限。The probe 200 includes a body 300, a plurality of probes 400, a light collector 500, and a light detector 600. The difference between the probe 200 and the first embodiment is that the light collector 500 can be a Luminous Flux Meter, and the structure of the integrating sphere is a conventional technique, and therefore will not be described again. The light collector 500 of this embodiment has a light incident surface, and the light incident surface faces the photovoltaic wafer 800. The beam splitter 610 is coupled to the light collector 500. The light detector 600 is coupled to the beam splitter 610 to capture light information of the photovoltaic wafer 800. The light collector 500 of the embodiment is exemplified by two-thirds of the ball, but is not limited thereto.
上述實施例所揭露之探測頭及應用此探測頭之晶圓檢測裝置，係以治具之夾具電性導通光電晶圓之第二半導體層，並且移動探測頭到光電晶圓之欲受測部位上，再以探測頭的多個探針直接電性導通此受測部位，以在受測部位處構成電性迴路而發出光線。此時，探測頭可直接偵測此受測部位所激發之光線，讓探測頭直接偵測光線強度及波長。以此結構設計，可確保通過光電晶圓之電流量。以此解決習知技術需要額外在晶圓上植入銦球才能達到相當電流量之問題，而且也減化植入銦球流程。The probe head and the wafer detecting device using the probe disclosed in the above embodiments electrically connect the second semiconductor layer of the photoelectric wafer with the fixture of the fixture, and move the probe to the desired portion of the photoelectric wafer. In the above, the probes of the probe are directly electrically connected to the tested portion to form an electrical circuit at the tested portion to emit light. At this time, the probe can directly detect the light excited by the tested part, and the probe directly detects the light intensity and the wavelength. This structural design ensures the amount of current through the optoelectronic wafer. In order to solve this problem, the prior art requires additional implantation of indium balls on the wafer to achieve a considerable amount of current, and also reduces the process of implanting the indium sphere.
再者，利用在探測頭所設置之光偵測器，讓探測頭能夠電性導通受測部位時直接收集受測部位之光線，以避免受測部位之光線因距離較遠而光線溢散、衰減，而造成光線檢測數值失真。Furthermore, by using the photodetector provided in the detecting head, the detecting head can directly collect the light of the tested part when electrically conducting the measuring part, so as to avoid the light of the measured part being separated due to the distance, and the light is scattered. Attenuation, causing distortion of the light detection value.
雖然本發明之實施例揭露如上所述，然並非用以限定本發明，任何熟習相關技藝者，在不脫離本發明之精神和範圍內，舉凡依本發明申請範圍所述之形狀、構造、特徵及精神當可做些許之變更，因此本發明之專利保護範圍須視本說明書所附之申請專利範圍所界定者為準。Although the embodiments of the present invention are disclosed above, it is not intended to limit the present invention, and those skilled in the art, regardless of the spirit and scope of the present invention, the shapes, structures, and features described in the scope of the present application. And the spirit of the invention is subject to change. Therefore, the scope of patent protection of the present invention is subject to the scope of the patent application attached to the specification.
10．．．晶圓檢測裝置10. . . Wafer inspection device
100．．．治具100. . . Fixture
110．．．軌道110. . . track
111．．．導線槽111. . . Wire guide
120．．．夾具120. . . Fixture
121．．．導電體121. . . Electrical conductor
130．．．真空抽取口130. . . Vacuum extraction port
200．．．探測頭200. . . Probe
300．．．本體300. . . Ontology
310．．．第一殼體310. . . First housing
311．．．第一開口311. . . First opening
320．．．第二殼體320. . . Second housing
321．．．第二開口321. . . Second opening
322．．．固定座322. . . Fixed seat
330．．．導光通道330. . . Light guide channel
340．．．導電件340. . . Conductive part
400．．．探針400. . . Probe
500．．．光收集器500. . . Light collector
600．．．光偵測器600. . . Light detector
610．．．分光器610. . . Splitter
620．．．光傳導器620. . . Light guide
630．．．訊號傳輸線630. . . Signal transmission line
700．．．彈性件700. . . Elastic part
800．．．光電晶圓800. . . Photovoltaic wafer
810．．．受測部位810. . . Test site
820．．．第一半導體層820. . . First semiconductor layer
830．．．發光層830. . . Luminous layer
840．．．第二半導體層840. . . Second semiconductor layer
850．．．基板850. . . Substrate
900．．．外部電源900. . . External power supply
「第1圖」為第一實施例之晶圓檢測裝置之立體示意圖。Fig. 1 is a perspective view showing the wafer detecting device of the first embodiment.
「第2圖」為「第1圖」之探測頭之立體示意圖。"Fig. 2" is a perspective view of the probe head of "Fig. 1".
「第3圖」為「第2圖」之剖面示意圖。"Picture 3" is a schematic cross-sectional view of "Picture 2".
「第4圖」為「第1圖」之治具之剖面示意圖。"Fig. 4" is a schematic cross-sectional view of the jig of "Fig. 1".
「第5圖」為「第1圖」之光電晶圓於晶圓檢測時之光線路徑圖。"5th picture" is the light path diagram of the photoelectric wafer of "Fig. 1" during wafer inspection.
「第6圖」為「第5圖」之放大示意圖。"Picture 6" is an enlarged view of "Picture 5".
「第7圖」為第二實施例之晶圓檢測裝置之剖面示意圖。Fig. 7 is a schematic cross-sectional view showing the wafer detecting device of the second embodiment.
10．．．晶圓檢測裝置10. . . Wafer inspection device
100．．．治具100. . . Fixture
110．．．軌道110. . . track
111．．．導線槽111. . . Wire guide
120．．．夾具120. . . Fixture
121．．．導電體121. . . Electrical conductor
130．．．真空抽取口130. . . Vacuum extraction port
200．．．探測頭200. . . Probe
300．．．本體300. . . Ontology
310．．．第一殼體310. . . First housing
311．．．第一開口311. . . First opening
320．．．第二殼體320. . . Second housing
321．．．第二開口321. . . Second opening
330．．．導光通道330. . . Light guide channel
340．．．導電件340. . . Conductive part
400．．．探針400. . . Probe
500．．．光收集器500. . . Light collector
600．．．光偵測器600. . . Light detector
700．．．彈性件700. . . Elastic part
800．．．光電晶圓800. . . Photovoltaic wafer
810．．．受測部位810. . . Test site
820．．．第一半導體層820. . . First semiconductor layer
830．．．發光層830. . . Luminous layer
840．．．第二半導體層840. . . Second semiconductor layer
850．．．基板850. . . Substrate
900．．．外部電源900. . . External power supply
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| TW100130823A TW201310039A (en) | 2011-08-26 | 2011-08-26 | Probe head and wafer inspecting apparatus using the same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100130823A TW201310039A (en) | 2011-08-26 | 2011-08-26 | Probe head and wafer inspecting apparatus using the same |
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| Publication Number | Publication Date |
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| TW201310039A true TW201310039A (en) | 2013-03-01 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI575243B (en) * | 2014-02-25 | 2017-03-21 | 加斯凱德微科技公司 | Systems and methods for on-wafer dynamic testing of electronic devices |
| TWI645206B (en) * | 2016-03-22 | 2018-12-21 | Yamaha Fine Technologies Co., Ltd. | Inspection jig, inspection apparatus and inspection method |
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- 2011-08-26 TW TW100130823A patent/TW201310039A/en unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI575243B (en) * | 2014-02-25 | 2017-03-21 | 加斯凱德微科技公司 | Systems and methods for on-wafer dynamic testing of electronic devices |
| US10281518B2 (en) | 2014-02-25 | 2019-05-07 | Formfactor Beaverton, Inc. | Systems and methods for on-wafer dynamic testing of electronic devices |
| TWI645206B (en) * | 2016-03-22 | 2018-12-21 | Yamaha Fine Technologies Co., Ltd. | Inspection jig, inspection apparatus and inspection method |
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