TW201306157A - Apparatus for treating substrate and method for discharging supercritical fluid - Google Patents

Apparatus for treating substrate and method for discharging supercritical fluid Download PDF

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TW201306157A
TW201306157A TW101123459A TW101123459A TW201306157A TW 201306157 A TW201306157 A TW 201306157A TW 101123459 A TW101123459 A TW 101123459A TW 101123459 A TW101123459 A TW 101123459A TW 201306157 A TW201306157 A TW 201306157A
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supercritical fluid
substrate
discharge
outer casing
disposed
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TW101123459A
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Chinese (zh)
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TWI503911B (en
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Yong-Hyun Choi
Ki-Bong Kim
Woo-Young Kim
Jeong-Seon Park
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Semes Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02101Cleaning only involving supercritical fluids

Abstract

Provided are an apparatus for treating a substrate and a method for discharge a supercritical fluid, and more particularly, an apparatus for treating a substrate using a supercritical fluid and a method for discharging the supercritical fluid using the same. The apparatus for treating the substrate includes a container for providing a supercritical fluid, a vent line through which the supercritical fluid is discharged from the container, and a freezing prevention unit disposed in the vent line to prevent the supercritical fluid from being frozen.

Description

用以處理基板之設備及用以排出超臨界流體之方法 Apparatus for processing a substrate and method for discharging a supercritical fluid

本文中之本發明係關於用於處理基板之設備及用於排出超臨界流體之方法,且更特定言之,係關於用於使用超臨界流體處理基板之設備及用於使用該設備來排出超臨界流體之方法。 The invention herein relates to apparatus for processing substrates and methods for discharging supercritical fluids, and more particularly to apparatus for processing substrates using supercritical fluids and for using the apparatus to discharge super The method of critical fluids.

可經由各種製程製造半導體器件,該等製程包括用於在諸如矽晶圓或其類似者之基板上形成電路圖案之光微影製程。當製造半導體器件時,可能會產生諸如粒子、有機污染物、金屬雜質及其類似者之各種異物。異物可能會引起基板缺陷直接對半導體器件之良率施加不利影響。因此,在半導體製造製程中可實質上涉及用於移除異物的清潔製程。 Semiconductor devices can be fabricated via a variety of processes including photolithographic processes for forming circuit patterns on substrates such as germanium wafers or the like. When manufacturing a semiconductor device, various foreign matters such as particles, organic contaminants, metal impurities, and the like may be generated. Foreign matter may cause substrate defects to directly adversely affect the yield of the semiconductor device. Therefore, a cleaning process for removing foreign matter can be substantially involved in the semiconductor manufacturing process.

一般而言,在典型清潔製程中,使用清潔劑移除保持在基板上的異物,且接著使用去離子水(DI水)清潔基板,以使用異丙醇(IPA)乾燥經清潔之基板。然而,在半導體器件具有精細電路圖案的情況下,乾燥製程可能具有低的效率。此外,由於電路圖案的損壞(亦即,圖案破裂)在乾燥製程期間頻繁發生,因此乾燥製程不適合於線寬度為約30 nm或更小的半導體器件。 In general, in a typical cleaning process, a foreign matter held on a substrate is removed using a cleaning agent, and then the substrate is cleaned using deionized water (DI water) to dry the cleaned substrate using isopropyl alcohol (IPA). However, in the case where the semiconductor device has a fine circuit pattern, the drying process may have low efficiency. Further, since damage of the circuit pattern (i.e., pattern cracking) frequently occurs during the drying process, the drying process is not suitable for a semiconductor device having a line width of about 30 nm or less.

因此,為瞭解決上述限制,正積極地進行關於用於使用超臨界流體來乾燥基板之技術的研究。 Therefore, in order to solve the above limitations, research on a technique for drying a substrate using a supercritical fluid is being actively conducted.

本發明提供用於處理基板之設備,其防止在排出超臨 界流體時超臨界流體被凍結,及排出超臨界流體之方法。 The present invention provides an apparatus for processing a substrate that prevents the discharge from being super A method in which a supercritical fluid is frozen and a supercritical fluid is discharged when the fluid is bounded.

本發明亦提供用於處理基板之設備,其移除在排出超臨界流體時產生的雜訊,及用於排出超臨界流體之方法。 The present invention also provides an apparatus for processing a substrate that removes noise generated when the supercritical fluid is discharged, and a method for discharging the supercritical fluid.

本發明之特徵不限於上述特徵,而熟習此項技術者自此說明書及隨附圖式將清楚地理解本文中未描述之其他特徵。 The features of the present invention are not limited to the features described above, and other features not described herein will be apparent from the description and accompanying drawings.

本發明提供用於處理基板之設備及用於排出超臨界流體之方法。 The present invention provides apparatus for processing substrates and methods for discharging supercritical fluids.

本發明之實施例提供用於處理基板之設備,該設備包括:一容器,其用於提供一超臨界流體;一排放管線,該超臨界流體經由該排放管線而自該容器排出;及一凍結防止單元,其安置於該排放管線中以防止該超臨界流體被凍結。 Embodiments of the present invention provide an apparatus for processing a substrate, the apparatus comprising: a container for providing a supercritical fluid; a discharge line through which the supercritical fluid is discharged; and a freezing A prevention unit is disposed in the discharge line to prevent the supercritical fluid from being frozen.

在一些實施例中,該凍結防止單元可包括一緩衝構件,該緩衝構件提供一緩衝空間以用於防止該超臨界流體壓力突然下降。 In some embodiments, the freeze prevention unit may include a cushioning member that provides a buffer space for preventing a sudden drop in pressure of the supercritical fluid.

在其他實施例中,該緩衝構件可包括:一外殼,其提供該緩衝空間;一流入管,該超臨界流體經由該流入管引入至該緩衝空間中;一排出管,該超臨界流體經由該排出管自該緩衝空間排出;及至少一分隔壁,其安置於該外殼內以具有垂直於長度方向的平面以將該緩衝空間分隔為複數個空間,該超臨界流體在該複數個空間中在壓力下逐漸下降。 In other embodiments, the cushioning member may include: a casing that provides the buffer space; an inflow pipe through which the supercritical fluid is introduced into the buffer space; and a discharge pipe through which the supercritical fluid is discharged The tube is discharged from the buffer space; and at least one partition wall disposed in the outer casing to have a plane perpendicular to the length direction to divide the buffer space into a plurality of spaces, the supercritical fluid being under pressure in the plurality of spaces Gradually decline.

在其他實施例中,一排放孔可界定於該至少一分隔壁中,且當在該外殼之長度方向上檢視時界定於彼此鄰近的分隔壁中之排放孔可界定於彼此不同的位置。 In other embodiments, a discharge aperture may be defined in the at least one partition wall, and the discharge apertures defined in the partition walls adjacent to each other when viewed in the length direction of the outer casing may be defined at positions different from each other.

在其他實施例中,當在該外殼之長度方向上檢視時鄰近於該流入管之該分隔壁的排放孔可界定於與安置該流入管之位置不同的位置,且當在該外殼之長度方向上檢視時鄰近於排氣管之該分隔壁的排放孔可界定於與安置該排氣管之位置不同的位置。 In other embodiments, the discharge opening adjacent to the partition wall of the inflow tube when viewed in the length direction of the outer casing may be defined at a position different from the position at which the inflow tube is disposed, and when in the length direction of the outer casing The discharge hole adjacent to the partition wall of the exhaust pipe at the time of the upper inspection may be defined at a position different from the position at which the exhaust pipe is disposed.

在其他實施例中,該凍結防止單元可進一步包括一加熱器以加熱該超臨界流體。 In other embodiments, the freeze prevention unit may further include a heater to heat the supercritical fluid.

在進一步之實施例中,該加熱器可安置於該外殼中。 In a further embodiment, the heater can be disposed in the housing.

在進一步之實施例中,該緩衝構件可進一步包括一吸音構件,該吸音構件安置於該外殼內以吸收自該超臨界流體產生之雜訊。 In a further embodiment, the cushioning member can further include a sound absorbing member disposed within the outer casing to absorb noise generated from the supercritical fluid.

在進一步之實施例中,該吸音構件可具有金屬絲網結構,其中斷該超臨界流體之流動以防止該超臨界流體壓力突然下降。 In a further embodiment, the sound absorbing member can have a wire mesh structure that interrupts the flow of the supercritical fluid to prevent a sudden drop in pressure of the supercritical fluid.

在進一步之實施例中,該流入管可具有連接至該排放管線之一末端及沿著該外殼之該長度方向插入至該外殼中之另一末端,且供排放該超臨界流體之流入管可在垂直於該外殼之長度方向的方向上界定於一部分中,該流入管在該部分中插入至該外殼中。 In a further embodiment, the inflow tube may have an end connected to one end of the discharge line and inserted into the outer casing along the length direction of the outer casing, and the inflow pipe for discharging the supercritical fluid may be A portion is defined in a direction perpendicular to the length direction of the outer casing in which the inflow pipe is inserted into the outer casing.

在更進一步之實施例中,該緩衝構件可包括一逆壓調節器,該逆壓調節器安置於該排出管中以恆定地維持該緩衝空間內之壓力。 In still further embodiments, the cushioning member can include a back pressure regulator disposed in the discharge tube to constantly maintain pressure within the buffer space.

在更進一步之實施例中,該凍結防止單元可包括安置於該排放管線中之一加熱器。 In still further embodiments, the freeze prevention unit can include a heater disposed in the discharge line.

在更進一步之實施例中,該容器可包括一處理腔室,在該處理腔室中,使用該超臨界流體執行一乾燥製程。 In still further embodiments, the container can include a processing chamber in which a drying process is performed using the supercritical fluid.

在更進一步之實施例中,該容器可包括用於將該超臨界流體供應至一處理腔室中之一供水槽,在該處理腔室中,使用該超臨界流體執行一乾燥製程。 In still further embodiments, the container can include a supply tank for supplying the supercritical fluid to a processing chamber in which a drying process is performed using the supercritical fluid.

在更進一步之實施例中,該凍結防止單元可提供為複數個,且該複數個凍結防止單元可彼此串聯連接。 In still further embodiments, the freeze prevention unit may be provided in plurality, and the plurality of freeze prevention units may be connected to each other in series.

在本發明之其他實施例中,用於自容器排出超臨界流體之方法包括在連接至容器之排放管線中提供緩衝空間以排出超臨界流體以防止該超臨界流體壓力突然下降,藉此防止超臨界流體被凍結。 In other embodiments of the invention, a method for discharging a supercritical fluid from a container includes providing a buffer space in a discharge line connected to the vessel to discharge the supercritical fluid to prevent a sudden drop in pressure of the supercritical fluid, thereby preventing super The critical fluid is frozen.

在一些實施例中,可在排出該超臨界流體期間對該超臨界流體進行加熱。 In some embodiments, the supercritical fluid can be heated during the discharge of the supercritical fluid.

在其他實施例中,一吸音構件可提供至通過該緩衝空間之該超臨界流體,以吸收自該超臨界流體產生的雜訊。 In other embodiments, a sound absorbing member can be provided to the supercritical fluid passing through the buffer space to absorb noise generated from the supercritical fluid.

在其他實施例中,該超臨界流體可自處理腔室排出,在該處理腔室中,使用該超臨界流體執行乾燥製程。 In other embodiments, the supercritical fluid can be discharged from the processing chamber where the drying process is performed using the supercritical fluid.

在其他實施例中,該超臨界流體可自用於將超臨界流體供應至處理腔室中之供水槽排出,在該處理腔室中,使用該超臨界流體執行乾燥製程。 In other embodiments, the supercritical fluid can be discharged from a water supply tank for supplying supercritical fluid to a processing chamber in which a drying process is performed using the supercritical fluid.

在本發明之其他實施例中,用於處理基板之設備包括:一處理腔室,在該處理腔室中,使用提供為超臨界流體之流體執行一乾燥製程;一儲存槽,其儲存該流體;一供水槽,其自該儲存槽接收該流體以產生該超臨界流體,且將該超臨界流體提供至該處理腔室中;一排放管線,其連接至該處理腔室及該供水槽中之至少一者,以排出該超臨界流體;及一凍結防止單元,其安置於該排放管線中以防止該超臨界流體被凍結。 In other embodiments of the invention, an apparatus for processing a substrate includes: a processing chamber in which a drying process is performed using a fluid provided as a supercritical fluid; and a storage tank storing the fluid a water supply tank receiving the fluid from the storage tank to produce the supercritical fluid and providing the supercritical fluid into the processing chamber; a discharge line connected to the processing chamber and the water supply tank At least one of to discharge the supercritical fluid; and a freeze prevention unit disposed in the discharge line to prevent the supercritical fluid from being frozen.

在一些實施例中,該凍結防止單元可包括一緩衝構件,該緩衝構件提供一緩衝空間以用於防止該超臨界流體壓力突然下降。 In some embodiments, the freeze prevention unit may include a cushioning member that provides a buffer space for preventing a sudden drop in pressure of the supercritical fluid.

在其他實施例中,該緩衝構件可包括一吸音構件,其吸收自該超臨界流體產生之雜訊。 In other embodiments, the cushioning member can include a sound absorbing member that absorbs noise generated from the supercritical fluid.

在其他實施例中,該凍結防止單元可包括一加熱器以加熱該超臨界流體。 In other embodiments, the freeze prevention unit can include a heater to heat the supercritical fluid.

包括隨附圖式以提供對本發明的進一步理解,且隨附圖式併入於本說明書中且構成本說明書之部分。該等圖式說明本發明之例示性實施例,且與實施方式一起用以解釋本發明之原理。 The accompanying drawings are included to provide a further understanding of the invention The drawings illustrate the exemplary embodiments of the invention and, together with the embodiments

提供本發明之較佳實施例以使得本發明將徹底且完整,且將本發明之範疇完全傳達給熟習此項技術者。然而,本發明可以不同形式實施,且不應解釋為限於本文中所闡述之實施例。因此,熟習此項技術者將顯而易見,可在不脫離本發明之精神或範疇的情況下在本發明中進行各種修改及更改。 The preferred embodiments of the present invention are provided so that this invention will be thorough and complete, and the scope of the invention will be fully disclosed to those skilled in the art. However, the invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. It will be apparent, therefore, that various modifications and changes may be made in the invention without departing from the spirit and scope of the invention.

亦將理解,儘管使用了特定術語且本文中附有圖式以容易地描述本發明之例示性實施例,但本發明不受此等術語及隨附圖式之限制。 It is also to be understood that the invention is not to be construed as being limited

此外,將排除關於熟知功能或組態之詳細描述,以便不會不必要地混淆本發明之標的物。 In addition, detailed descriptions of well-known functions or configurations are omitted so as not to unnecessarily obscure the subject matter of the present invention.

根據本發明之用於處理基板之設備100可為用於對基板S執行清潔製程之設備。 The apparatus 100 for processing a substrate according to the present invention may be an apparatus for performing a cleaning process on the substrate S.

此處,應綜合地理解,基板S可包括各種晶圓(包括矽晶圓)、玻璃基板、有機基板及其類似物,以及用於製造半導體器件、顯示器、包括上面形成有電路之薄膜的產品及其類似物之基板。 Here, it should be comprehensively understood that the substrate S may include various wafers (including germanium wafers), glass substrates, organic substrates, and the like, and products for manufacturing semiconductor devices, displays, and films including the circuits formed thereon. A substrate for its analogs.

下文中,將描述根據一實施例之用於處理基板之設備100。 Hereinafter, an apparatus 100 for processing a substrate according to an embodiment will be described.

圖1為根據本發明之一實施例之用於處理基板之設備100的平面圖。 1 is a plan view of an apparatus 100 for processing a substrate in accordance with an embodiment of the present invention.

用於處理基板之設備100包括索引模組1000、處理模組2000、超臨界流體供應單元3000、再循環單元4000及凍結防止單元5000。索引模組1000接收來自外部之基板S以將基板S提供至處理模組中。處理模組2000對基板S執行清潔製程。超臨界流體供應單元3000供應待用於清潔製程之超臨界流體,且再循環單元4000使用於清潔製程之超臨界流體再循環。凍結防止單元500防止自處理模組2000、超臨界流體供應單元3000及再循環單元4000排出之超臨界流體被凍結。 The apparatus 100 for processing a substrate includes an indexing module 1000, a processing module 2000, a supercritical fluid supply unit 3000, a recycling unit 4000, and a freeze prevention unit 5000. The indexing module 1000 receives the substrate S from the outside to provide the substrate S into the processing module. The processing module 2000 performs a cleaning process on the substrate S. The supercritical fluid supply unit 3000 supplies the supercritical fluid to be used in the cleaning process, and the recycling unit 4000 uses the supercritical fluid recirculation for the cleaning process. The freeze prevention unit 500 prevents the supercritical fluid discharged from the processing module 2000, the supercritical fluid supply unit 3000, and the recirculation unit 4000 from being frozen.

索引模組1000可為設備前端模組(EFEM)。而且,索引模組1000包括裝載埠1100及傳送框1200。裝載埠1100、傳送框1200及處理模組2000可連續地配置成一行。此處,裝載埠1100、傳送框1200及處理模組2000之配置方向稱為第一方向X。而且,當自上側檢視時,垂直於第一方向X之方向稱為第二方向Y,且垂直於第一方向X及第二方向Y之方向稱為第三方向Z。 The index module 1000 can be an equipment front end module (EFEM). Moreover, the indexing module 1000 includes a loading cassette 1100 and a transfer box 1200. The loading cassette 1100, the transfer frame 1200, and the processing module 2000 can be continuously arranged in a row. Here, the arrangement direction of the loading cassette 1100, the transfer frame 1200, and the processing module 2000 is referred to as a first direction X. Moreover, when viewed from the upper side, the direction perpendicular to the first direction X is referred to as the second direction Y, and the direction perpendicular to the first direction X and the second direction Y is referred to as the third direction Z.

至少一裝載埠1100可提供於索引模組1000中。裝載埠1100安置於傳送框1200之一側上。當裝載埠1100提供 為複數個時,裝載埠1100可沿著第二方向Y配置成一行。裝載埠1100之數目及配置並不限於上述實例。舉例而言,可考慮到用於處理基板之設備100之佔據面積、處理效率及相對於其他用於處理基板之設備100之相對配置而適當地選擇裝載埠1100之數目及配置。 At least one load cassette 1100 can be provided in the index module 1000. The loading cassette 1100 is disposed on one side of the transfer frame 1200. When loading 埠1100 provides In the case of a plurality of loads, the load cassettes 1100 may be arranged in a row along the second direction Y. The number and configuration of the loading cassettes 1100 are not limited to the above examples. For example, the number and configuration of the loading cassettes 1100 can be appropriately selected in consideration of the footprint of the apparatus 100 for processing substrates, processing efficiency, and relative configuration of other apparatus 100 for processing substrates.

在其中接收基板C之載體C安置於裝載埠1100上。載體C自外部傳送,且接著裝載於裝載埠1100上,或自裝載埠1100卸載,且接著傳送至外部。舉例而言,載體C可藉由諸如懸吊式升降傳送器(OHT)之傳送單元而在用於處理基板之設備100之間傳送。此處,可藉由諸如無人搬運車、軌道導引車或其類似物之其他傳送單元來替代OHT或工人來傳送基板S。 The carrier C in which the substrate C is received is placed on the loading cassette 1100. The carrier C is transported from the outside and then loaded onto the load cassette 1100 or unloaded from the load cassette 1100 and then transferred to the outside. For example, carrier C can be transferred between devices 100 for processing substrates by a transfer unit such as a suspended lift conveyor (OHT). Here, the substrate S may be transferred by replacing the OHT or the worker by another transfer unit such as an automated guided vehicle, a track guided vehicle or the like.

基板S經接收至載體C中。正面開口標準箱(FOUP)可用作載體C。 The substrate S is received into the carrier C. A front opening standard box (FOUP) can be used as the carrier C.

用於支撐基板S之邊緣的至少一狹槽可設置於載體C內。當狹槽提供為複數個時,該等狹槽可沿著第三方向Z彼此隔開。因此,基板S可置放於載體C內。舉例而言,載體C可接收25個基板S。 At least one slot for supporting the edge of the substrate S may be disposed within the carrier C. When the slots are provided in plural, the slots may be spaced apart from each other along the third direction Z. Therefore, the substrate S can be placed in the carrier C. For example, carrier C can receive 25 substrates S.

載體C之內部可藉由可打開的門與外部隔離,且因此得以密封。因此,可防止接收於載體C中之基板S受到污染。 The interior of the carrier C can be isolated from the outside by an openable door and thus sealed. Therefore, contamination of the substrate S received in the carrier C can be prevented.

傳送框架1200在位於裝載埠1100上之載體C與處理模組2000之間傳送基板S。傳送模組1200包括索引機器人1210及索引軌1220。 The transfer frame 1200 transfers the substrate S between the carrier C located on the loading cassette 1100 and the processing module 2000. The transfer module 1200 includes an indexing robot 1210 and an index track 1220.

索引軌1220提供索引機器人1210之移動路徑。索引軌1220可經安置以使得其長度方向平行於第二方向Y。 Index track 1220 provides a path of movement for indexing robot 1210. The index track 1220 can be positioned such that its length direction is parallel to the second direction Y.

索引機器人1210傳送基板S。索引機器人1210可包括基座1211、本體1212及臂1213。 The indexing robot 1210 transmits the substrate S. The indexing robot 1210 can include a base 1211, a body 1212, and an arm 1213.

基座1211安置於索引軌1220上。而且,基座1211可沿著索引軌1220而移動。本體1212耦接至基座1211。而且,本體1212可沿著第三方向Z在基座1211上移動,或圍繞在第三方向Z上界定之軸線而旋轉。臂1213安置於本體1212上。而且,臂1213可前後移動。手部可放在臂1213之末端上以拾取或置放基板S。索引機器人1210可包括至少一臂1213。當臂1213提供為複數個時,臂1213可堆疊於本體1212上且配置於第三方向Z上。此處,各臂1213可獨立地操作。 The base 1211 is disposed on the index rail 1220. Moreover, the base 1211 can be moved along the index rail 1220. The body 1212 is coupled to the base 1211. Moreover, the body 1212 can move over the base 1211 along a third direction Z or about an axis defined in the third direction Z. The arm 1213 is disposed on the body 1212. Moreover, the arm 1213 can be moved back and forth. A hand can be placed on the end of the arm 1213 to pick up or place the substrate S. The indexing robot 1210 can include at least one arm 1213. When the arms 1213 are provided in plurality, the arms 1213 may be stacked on the body 1212 and disposed in the third direction Z. Here, each arm 1213 can operate independently.

因此,在索引機器人1210中,基座1211可在第二方向Y上在索引軌1220上移動。而且,索引機器人1210可根據本體1212及臂1213之操作而自載體C取出基板S以將基板S傳送至處理模組2000中或自處理模組2000取出基板S以將基板S接收於載體C中。 Thus, in the indexing robot 1210, the pedestal 1211 can move over the index track 1220 in the second direction Y. Moreover, the indexing robot 1210 can take out the substrate S from the carrier C according to the operation of the body 1212 and the arm 1213 to transfer the substrate S into the processing module 2000 or take out the substrate S from the processing module 2000 to receive the substrate S in the carrier C. .

在傳送框1200中可略去索引軌1220,且索引機器人1210可固定至傳送框1200。在此情況下,索引機器人1210可安置於傳送框1200之中央部分上。 The index track 1220 may be omitted in the transfer block 1200 and the indexing robot 1210 may be fixed to the transfer frame 1200. In this case, the indexing robot 1210 can be disposed on a central portion of the transfer frame 1200.

處理模組2000自索引模組1000接收基板S以對基板S執行清潔製程。處理模組2000包括緩衝腔室2100、傳送腔室2200、第一處理腔室2300及第二處理腔室2500。緩衝腔室2100及傳送腔室2200係沿第一方向X而安置,且傳送腔室2200經安置以使得其長度方向平行於第一方向X。處理腔室2300及2500可在第二方向Y上安置於傳送腔室2200之側表面上。 The processing module 2000 receives the substrate S from the indexing module 1000 to perform a cleaning process on the substrate S. The processing module 2000 includes a buffer chamber 2100, a transfer chamber 2200, a first processing chamber 2300, and a second processing chamber 2500. The buffer chamber 2100 and the transfer chamber 2200 are disposed along the first direction X, and the transfer chamber 2200 is disposed such that its length direction is parallel to the first direction X. The processing chambers 2300 and 2500 may be disposed on a side surface of the transfer chamber 2200 in the second direction Y.

此處,第一處理腔室2300可在第二方向Y上安置於傳送腔室2200之一側上,且第二處理腔室2500可安置於與安置有第一處理腔室之該側相對的另一側上。第一處理腔室2300可提供為一個或複數個。當提供複數個第一處理腔室2300時,第一處理腔室2300可沿第一方向X安置於傳送腔室2200之一側上、沿第三方向Z堆疊,或按其組合而安置。類似地,第二處理腔室2500可提供為一個或複數個。當提供複數個第二處理腔室時,第二處理腔室可沿第一方向X安置於傳送腔室2500之一側上、沿第三方向Z堆疊,或按其組合而安置。 Here, the first processing chamber 2300 may be disposed on one side of the transfer chamber 2200 in the second direction Y, and the second processing chamber 2500 may be disposed opposite the side on which the first processing chamber is disposed On the other side. The first processing chamber 2300 can be provided in one or more. When a plurality of first processing chambers 2300 are provided, the first processing chambers 2300 can be disposed on one side of the transfer chamber 2200 in the first direction X, stacked in the third direction Z, or disposed in a combination thereof. Similarly, the second processing chamber 2500 can be provided in one or more. When a plurality of second processing chambers are provided, the second processing chambers may be disposed on one side of the transfer chamber 2500 in the first direction X, stacked in the third direction Z, or disposed in a combination thereof.

然而,處理模組200中之腔室中之每一者的配置並不限於上述實例。亦即,可考慮到處理效率而適當地安置該等腔室。舉例而言,在必要時,第一處理腔室2300及第二處理腔室2500可沿第一方向X安置於與傳送模組2200相同側之平面上,或堆疊於彼此之上。 However, the configuration of each of the chambers in the processing module 200 is not limited to the above examples. That is, the chambers can be appropriately placed in consideration of the processing efficiency. For example, the first processing chamber 2300 and the second processing chamber 2500 may be disposed in a first direction X on a plane on the same side as the transfer module 2200, or stacked on each other, as necessary.

緩衝腔室2100安置於傳送框1200與傳送腔室2200之間以提供緩衝空間,在索引模組1000與處理模組2000之間傳送之基板S可暫時停放於該緩衝空間中。其上置放基板S之至少一緩衝狹槽可提供於緩衝腔室2100內。當緩衝狹槽提供為複數個時,該等緩衝狹槽可沿著第三方向Z彼此隔開。 The buffer chamber 2100 is disposed between the transfer frame 1200 and the transfer chamber 2200 to provide a buffer space. The substrate S transferred between the index module 1000 and the processing module 2000 can be temporarily parked in the buffer space. At least one buffer slot on which the substrate S is placed may be provided in the buffer chamber 2100. When the buffer slots are provided in plural, the buffer slots may be spaced apart from each other along the third direction Z.

藉由索引機器人1210自載體C取出之基板可位於緩衝狹槽中,或藉由傳送腔室2200之傳送機器人2210自處理腔室2300及2500傳送之基板C可位於緩衝狹槽中。另一方面,索引機器人1210或傳送機器人2210可自緩衝狹槽取出基板S以將基板S接收於載體C中,或將基板S傳送 至處理腔室2300及2500中。 The substrate taken from the carrier C by the indexing robot 1210 may be located in the buffer slot, or the substrate C transported from the processing chambers 2300 and 2500 by the transfer robot 2210 of the transfer chamber 2200 may be located in the buffer slot. On the other hand, the indexing robot 1210 or the transfer robot 2210 can take out the substrate S from the buffer slot to receive the substrate S in the carrier C, or transfer the substrate S Up to the processing chambers 2300 and 2500.

傳送腔室2200在圍繞其安置之腔室2100、2300與2500之間傳送基板S。緩衝腔室2100可在第一方向X上安置於傳送腔室2200之一側上。處理腔室2300及2500可在第二方向Y上安置於傳送腔室2200之一側或兩側上。因此,傳送腔室2200可在緩衝腔室2100、第一處理腔室2300與第二處理腔室2500之間傳送基板S。 The transfer chamber 2200 transfers the substrate S between the chambers 2100, 2300 and 2500 disposed therearound. The buffer chamber 2100 may be disposed on one side of the transfer chamber 2200 in the first direction X. The processing chambers 2300 and 2500 can be disposed on one or both sides of the transfer chamber 2200 in the second direction Y. Accordingly, the transfer chamber 2200 can transfer the substrate S between the buffer chamber 2100, the first process chamber 2300, and the second process chamber 2500.

傳送腔室2200包括傳送軌2220及傳送機器人2210。傳送軌2220提供傳送機器人2210之移動路徑。傳送軌2220可平行於第一方向X而安置。傳送機器人2210傳送基板S。傳送機器人2210可包括基座2211、本體2212及臂2213。由於傳送機器人2210之組件中之每一者類似於索引機器人1210之彼等組件中之每一者,故將省略其詳細描述。傳送機器人2210藉由本體2212及臂2213之操作而在緩衝腔室2100、第一處理腔室2300與第二處理腔室2500之間傳送基板S,同時基座2211沿傳送軌2220移動。 The transfer chamber 2200 includes a transfer rail 2220 and a transfer robot 2210. The transport track 2220 provides a path of movement for the transfer robot 2210. The transfer rail 2220 can be disposed parallel to the first direction X. The transfer robot 2210 transfers the substrate S. The transfer robot 2210 can include a base 2211, a body 2212, and an arm 2213. Since each of the components of the transfer robot 2210 is similar to each of the components of the indexing robot 1210, a detailed description thereof will be omitted. The transfer robot 2210 transfers the substrate S between the buffer chamber 2100, the first processing chamber 2300, and the second processing chamber 2500 by the operation of the body 2212 and the arm 2213 while the susceptor 2211 moves along the transfer rail 2220.

第一處理腔室2300及第二處理腔室2500可對基板S執行彼此不同之製程。此處,在第一處理腔室2300中執行之第一製程與在第二處理腔室2500中執行之第二製程可連續地執行。舉例而言,可在第一處理腔室2300中執行化學製程、清潔製程及第一乾燥製程。而且,可在第二處理腔室2500中執行為第一製程之後續製程的第二乾燥製程。此處,第一乾燥製程可為使用有機溶劑執行之濕式乾燥製程,且第二乾燥製程可為使用超臨界流體執行之超臨界乾燥製程。在必要時,可選擇性地執行第一乾燥製程及第二乾燥製程中之僅一者。 The first processing chamber 2300 and the second processing chamber 2500 may perform processes different from each other for the substrate S. Here, the first process performed in the first process chamber 2300 and the second process performed in the second process chamber 2500 may be continuously performed. For example, the chemical process, the cleaning process, and the first drying process can be performed in the first process chamber 2300. Moreover, a second drying process that is a subsequent process of the first process can be performed in the second process chamber 2500. Here, the first drying process may be a wet drying process performed using an organic solvent, and the second drying process may be a supercritical drying process performed using a supercritical fluid. When necessary, only one of the first drying process and the second drying process may be selectively performed.

下文中,將描述第一處理腔室2300。圖2為圖1之第二處理腔室2300的截面圖。 Hereinafter, the first processing chamber 2300 will be described. 2 is a cross-sectional view of the second processing chamber 2300 of FIG.

第一製程係在第一處理腔室2300中執行。此處,第一製程可包括化學製程、清潔製程及第一乾燥製程中之至少一者。如前所述,可省略第一乾燥製程。 The first process is performed in the first process chamber 2300. Here, the first process may include at least one of a chemical process, a cleaning process, and a first drying process. As mentioned previously, the first drying process can be omitted.

第一處理腔室2300包括外殼2310及處理單元2400。外殼2310界定第一處理腔室230之外壁,且處理單元2400安置於外殼2310內以執行第一製程。 The first processing chamber 2300 includes a housing 2310 and a processing unit 2400. The outer casing 2310 defines an outer wall of the first processing chamber 230, and the processing unit 2400 is disposed within the outer casing 2310 to perform a first process.

處理單元2400包括自旋頭2410、流體供應構件2420、回收容器2430及升降構件2440。 The processing unit 2400 includes a spin head 2410, a fluid supply member 2420, a recovery container 2430, and a lifting member 2440.

基板S位於自旋頭上2410。而且,自旋頭2410在製程進展期間旋轉基板S。自旋頭2410可包括支撐板2411、支撐銷2412、夾持銷2413、旋轉軸2414及馬達2415。 The substrate S is located on the spin head 2410. Moreover, the spin head 2410 rotates the substrate S during the progress of the process. The spin head 2410 may include a support plate 2411, a support pin 2412, a clamp pin 2413, a rotating shaft 2414, and a motor 2415.

支撐板2411具有形狀與基板S之形狀類似的上部部分。亦即,支撐板2411之上部部分可具有圓形形狀。其上置放有基板S之複數個支撐銷2412及用於固定基板S之複數個夾持銷2413安置於支撐板2411上。藉由馬達2415而旋轉之旋轉軸2414固定且耦接至支撐板2411之底表面。馬達2415使用外部電源產生旋轉力,以經由旋轉軸2414旋轉支撐板2411。因此,基板S可位於自旋頭2410上,且支撐板2411可經旋轉以在第一製程進展期間使基板旋轉。 The support plate 2411 has an upper portion having a shape similar to that of the substrate S. That is, the upper portion of the support plate 2411 may have a circular shape. A plurality of support pins 2412 on which the substrate S is placed and a plurality of clamping pins 2413 for fixing the substrate S are disposed on the support plate 2411. The rotating shaft 2414 rotated by the motor 2415 is fixed and coupled to the bottom surface of the support plate 2411. The motor 2415 generates a rotational force using an external power source to rotate the support plate 2411 via the rotating shaft 2414. Thus, the substrate S can be located on the spin head 2410, and the support plate 2411 can be rotated to rotate the substrate during the first process progression.

支撐銷2412中之每一者在第三方向Z上自支撐板2411之頂表面突出。複數個支撐銷2412經安置為彼此隔開預設距離。當自上側檢視時,支撐銷2412可配置成圓環形狀。基板S之後表面可置放於支撐銷2412上。因此,基板S位於支撐銷2412上,以使得基板S藉由支撐銷2412而與支 撐板2411之頂表面隔開支撐銷2412中之每一者的突出距離。 Each of the support pins 2412 protrudes from the top surface of the support plate 2411 in the third direction Z. A plurality of support pins 2412 are disposed to be spaced apart from each other by a predetermined distance. The support pin 2412 may be configured in a ring shape when viewed from the upper side. The surface behind the substrate S can be placed on the support pin 2412. Therefore, the substrate S is located on the support pin 2412 such that the substrate S is supported by the support pin 2412. The top surface of the gusset 2411 is spaced apart from the protruding distance of each of the support pins 2412.

夾持銷2413中之每一者較之於支撐銷2412中之每一者可在第三方向Z上進一步自支撐板2411之頂表面突出。因此,夾持銷2413較之於支撐銷2412可安置地距支撐板2411之中心更遠。夾持銷2413可沿著支撐板2411之半徑方向在固定位置與拾取位置之間移動。此處,固定位置表示與支撐板2411之中心隔開對應於基板S之半徑的距離之位置,且拾取位置表示較之於固定位置遠離支撐板2411之中心的位置。當藉由傳送機器人2210將基板S裝載於自旋頭2410上時,夾持銷2413安置於拾取位置處。當裝載基板S且接著執行製程時,夾持銷2413可移動至固定位置以接觸基板S之側表面,藉此將基板S固定在常規位置。而且,當完成該製程,且接著傳送機器人2210拾取基板S以卸載基板S時,夾持銷2413可再次移動至拾取位置。因此,夾持銷2413可防止基板S藉由旋轉自旋頭2410時的旋轉力而自常規位置分離。 Each of the clamping pins 2413 can protrude further from the top surface of the support plate 2411 in the third direction Z than each of the support pins 2412. Thus, the clamping pin 2413 can be disposed further from the center of the support plate 2411 than the support pin 2412. The clamping pin 2413 is movable between a fixed position and a picking position along the radial direction of the support plate 2411. Here, the fixed position indicates a position spaced apart from the center of the support plate 2411 by a distance corresponding to the radius of the substrate S, and the pickup position indicates a position away from the center of the support plate 2411 from the fixed position. When the substrate S is loaded on the spin head 2410 by the transfer robot 2210, the clamp pin 2413 is placed at the pickup position. When the substrate S is loaded and then the process is performed, the pin 2413 can be moved to a fixed position to contact the side surface of the substrate S, thereby fixing the substrate S in a normal position. Moreover, when the process is completed, and then the transfer robot 2210 picks up the substrate S to unload the substrate S, the pin 2413 can be moved to the pickup position again. Therefore, the pin 2413 prevents the substrate S from being separated from the normal position by the rotational force when the spin head 2410 is rotated.

流體供應構件2420將流體供應至基板S。流體供應構件2420可包括噴嘴2421、支撐件2422、支撐軸2423及驅動器2424。支撐軸2423經安置使得其長度方向平行於第三方向Z。驅動器2424耦接至支撐軸2423之下端。驅動器2424使支撐軸2423旋轉或使支撐軸2423沿著第三方向Z垂直移動。支撐件2422垂直地耦接至支撐軸2423之上部部分。噴嘴2421安置於支撐件2422之一末端的底表面上。噴嘴2421可藉由支撐軸2423藉由驅動器2424之旋轉及升降而在處理位置與待用位置之間移動。此處,處理位置表 示噴嘴2421安置於支撐板2411正上方之位置,且待用位置表示噴嘴2421安置為自支撐板2411之正上側偏離之位置。 The fluid supply member 2420 supplies fluid to the substrate S. The fluid supply member 2420 can include a nozzle 2421, a support 2422, a support shaft 2423, and a driver 2424. The support shaft 2423 is disposed such that its length direction is parallel to the third direction Z. The driver 2424 is coupled to the lower end of the support shaft 2423. The driver 2424 rotates the support shaft 2423 or vertically moves the support shaft 2423 along the third direction Z. The support member 2422 is vertically coupled to the upper portion of the support shaft 2423. A nozzle 2421 is disposed on a bottom surface of one end of the support member 2422. The nozzle 2421 is movable between the processing position and the standby position by the rotation and lifting of the driver 2424 by the support shaft 2423. Here, the processing location table The nozzle 2421 is disposed at a position directly above the support plate 2411, and the position to be used indicates that the nozzle 2421 is disposed to be displaced from the upper side of the support plate 2411.

至少一流體供應構件2420可提供於處理單元2400中。當流體供應構件2420提供為複數個時,各流體供應構件2420可分別彼此不同地供應流體。舉例而言,複數個流體供應構件2420中之每一者可供應清潔劑、沖洗劑,或有機溶劑。此處,清潔劑可包括過氧化氫(H2O2)溶液、氨水(NH4OH)、氫氯酸(HCl)及硫酸(H2SO4)與過氧化氫(H2O2)溶液混合之溶液,或氫氟酸(HF)溶液。去離子水可主要用作沖洗劑。有機溶劑可包括異丙醇、乙二醇、1-丙醇、四液壓法郎(tetra hydraulic franc)、4-羥基、4-甲基、2-戊酮、1-丁醇、2-丁醇、甲醇、乙醇、正丙醇或二甲醚。舉例而言,第一流體供應構件2420a可噴灑氨水過氧化氫溶液,第二流體供應構件可噴灑去離子水,且第三流體供應構件2420c可噴灑異丙醇溶液。然而,有機溶劑可不為液體狀態,而可為氣態。若以氣態來提供有機溶劑,可將有機溶劑與惰性氣體混合。 At least one fluid supply member 2420 can be provided in the processing unit 2400. When the fluid supply members 2420 are provided in plural, each of the fluid supply members 2420 may supply fluids differently from each other, respectively. For example, each of the plurality of fluid supply members 2420 can supply a cleaning agent, a rinsing agent, or an organic solvent. Here, the cleaning agent may include hydrogen peroxide (H 2 O 2 ) solution, ammonia water (NH 4 OH), hydrochloric acid (HCl), and sulfuric acid (H 2 SO 4 ) and hydrogen peroxide (H 2 O 2 ) solution. A mixed solution, or a hydrofluoric acid (HF) solution. Deionized water can be used primarily as a rinsing agent. The organic solvent may include isopropanol, ethylene glycol, 1-propanol, tetra hydraulic franc, 4-hydroxy, 4-methyl, 2-pentanone, 1-butanol, 2-butanol, Methanol, ethanol, n-propanol or dimethyl ether. For example, the first fluid supply member 2420a can spray an aqueous ammonia hydrogen peroxide solution, the second fluid supply member can spray deionized water, and the third fluid supply member 2420c can spray an isopropanol solution. However, the organic solvent may not be in a liquid state but may be in a gaseous state. If the organic solvent is supplied in a gaseous state, the organic solvent may be mixed with an inert gas.

當使基板S位於自旋頭2410上時,可將流體供應構件2420自待用位置移動至處理位置以將上述流體供應於基板S上。舉例而言,流體供應構件2420可供應清潔劑、沖洗劑及有機溶劑以分別執行化學製程、清潔製程及第一乾燥製程。如上所述,自旋頭2410可藉由馬達2415而旋轉以在製程進展期間將流體均一地供應至基板S之頂表面上。 When the substrate S is placed on the spin head 2410, the fluid supply member 2420 can be moved from the standby position to the processing position to supply the fluid onto the substrate S. For example, the fluid supply member 2420 can supply a cleaning agent, a rinsing agent, and an organic solvent to perform a chemical process, a cleaning process, and a first drying process, respectively. As described above, the spin head 2410 can be rotated by the motor 2415 to uniformly supply the fluid to the top surface of the substrate S during the progress of the process.

回收容器2430提供在其中執行第一製程之空間。而且,回收容器2430回收用於第一製程之流體。當自上側檢 視時,回收容器2430環繞自旋頭2410而安置以圍繞自旋頭2410,且具有打開之上側。至少一回收容器2430可提供於處理單元2400中。下文中,將描述包括三個回收容器2430,亦即第一回收容器2430a、第二回收容器2430b及第三回收容器2430c之處理單元2400。然而,可根據流體之數目及第一製程之條件而不同地選擇回收容器2430之數目。 The recycling container 2430 provides a space in which the first process is performed. Moreover, the recovery vessel 2430 recovers the fluid used in the first process. When from the top Depending on the time, the recovery container 2430 is placed around the spin head 2410 to surround the spin head 2410 and has an open upper side. At least one recovery container 2430 can be provided in the processing unit 2400. Hereinafter, a processing unit 2400 including three recovery containers 2430, that is, a first recovery container 2430a, a second recovery container 2430b, and a third recovery container 2430c will be described. However, the number of recovery containers 2430 can be selected differently depending on the number of fluids and the conditions of the first process.

第一回收容器2430a、第二回收容器2430b及第三回收容器2430c中之每一者可具有圓環形狀以圍繞自旋頭2410。而且,第一回收容器2430a、第二回收容器2430b及第三回收容器2430c可按第一回收容器2430a、第二回收容器2430b及第三回收容器2430c之次序而經安置遠離自旋頭2410之中心。亦即,第一回收容器2430a圍繞自旋頭2410,第二回收容器2430b圍繞第一回收容器2430a,且第三回收容器2430c圍繞第二回收容器2430b。因此,流入孔2431可配置於第三方向Z中。 Each of the first recovery container 2430a, the second recovery container 2430b, and the third recovery container 2430c may have a circular ring shape to surround the spin head 2410. Moreover, the first recovery container 2430a, the second recovery container 2430b, and the third recovery container 2430c may be disposed away from the center of the spin head 2410 in the order of the first recovery container 2430a, the second recovery container 2430b, and the third recovery container 2430c. . That is, the first recovery container 2430a surrounds the spin head 2410, the second recovery container 2430b surrounds the first recovery container 2430a, and the third recovery container 2430c surrounds the second recovery container 2430b. Therefore, the inflow hole 2431 can be disposed in the third direction Z.

第一回收容器2430a具有由其內部空間界定之第一流入孔2431a。第二回收容器2430b具有由第一回收容器2430a與第二回收容器2430b之間的空間界定之第二流入孔2431b。第三回收容器2430c具有由第二回收容器2430b與第三回收容器2430c之間的空間界定之第三回收容器2430c。沿第三方向Z向下延伸之回收管線2432連接至第一回收容器2430a、第二回收容器2430b及第三回收容器2430c中之每一者的底表面。第一回收管線2432a、第二回收管線2432b及第三回收管線2432c中之每一者將所回收之流體排出至第一回收容器2430a、第二回收容器2430b及 第三回收容器2430c中,以將流體供應至外部流體再循環系統(未圖示)。該流體再循環系統(未圖示)可使所回收之流體再循環以再用該等流體。 The first recovery container 2430a has a first inflow hole 2431a defined by its internal space. The second recovery container 2430b has a second inflow hole 2431b defined by a space between the first recovery container 2430a and the second recovery container 2430b. The third recovery container 2430c has a third recovery container 2430c defined by a space between the second recovery container 2430b and the third recovery container 2430c. A recovery line 2432 extending downward in the third direction Z is connected to the bottom surface of each of the first recovery container 2430a, the second recovery container 2430b, and the third recovery container 2430c. Each of the first recovery line 2432a, the second recovery line 2432b, and the third recovery line 2432c discharges the recovered fluid to the first recovery container 2430a, the second recovery container 2430b, and The third recovery vessel 2430c is for supplying fluid to an external fluid recirculation system (not shown). The fluid recirculation system (not shown) can recycle the recovered fluid to reuse the fluids.

升降構件2440在第三方向Z上移動回收容器2430。因此,回收容器2430可改變相對於自旋頭2410之相對高度。當回收容器2430提供為複數個時,一個回收容器2430之流入孔2431可在高度上選擇性地加以調整,以使得流入孔2431安置於位於自旋頭2410上的基板S的水平平面上。 The lifting member 2440 moves the recovery container 2430 in the third direction Z. Therefore, the recovery container 2430 can change the relative height relative to the spin head 2410. When the recovery container 2430 is provided in plural, the inflow hole 2431 of one recovery container 2430 can be selectively adjusted in height such that the inflow hole 2431 is disposed on the horizontal plane of the substrate S on the spin head 2410.

升降構件2440包括托架2441、升降軸2442及升降機2443。托架2441固定至回收容器2430。托架2441之一個末端固定且耦接至藉由升降機2443而在第三方向Z上移動之升降軸2442。當回收容器2430提供為複數個時,托架2441可耦接至最外的回收容器2430。 The lifting member 2440 includes a bracket 2441, a lifting shaft 2442, and an elevator 2443. The bracket 2441 is fixed to the recovery container 2430. One end of the bracket 2441 is fixed and coupled to the lifting shaft 2442 that is moved in the third direction Z by the elevator 2443. When the recovery container 2430 is provided in plural, the bracket 2441 can be coupled to the outermost recovery container 2430.

當將基板S裝載於自旋頭2410上或自自旋頭2410卸載時,升降構件2440可將回收容器2430向下移動,以防止回收容器2430干擾用於傳送基板S之傳送機器人2210的路徑。 When the substrate S is loaded on or unloaded from the spin head 2410, the lifting member 2440 can move the recovery container 2430 downward to prevent the recycling container 2430 from interfering with the path of the transfer robot 2210 for transporting the substrate S.

而且,當藉由流體供應構件2420供應流體且旋轉自旋頭2410以執行第一製程時,升降構件2440可在第三方向Z上移動回收容器2430以將回收容器2430之流入孔2431定位於與基板S相同之水平平面上,使得由於由基板S之旋轉引起的離心力而自基板S跳脫的流體得以回收。舉例而言,在按藉由清潔劑進行之化學製程、藉由沖洗劑進行之清潔製程及藉由有機溶劑進行之第一乾燥製程的次序來執行第一製程的情況下,在供應清潔劑、沖洗劑及有機溶劑時,可將第一流入孔2431a、第二流入孔2431b及第三流入 孔2431c移動至與基板S相同之水平平面以將流體分別回收至第一回收容器2430a、第二回收容器2430b及第三回收容器2430c中。如上所述,當回收用過的流體時,可防止環境污染,且亦可使昂貴的流體再循環以降低半導體製造成本。 Moreover, when the fluid is supplied by the fluid supply member 2420 and the spin head 2410 is rotated to perform the first process, the lifting member 2440 can move the recovery container 2430 in the third direction Z to position the inflow hole 2431 of the recovery container 2430 with The substrate S is on the same horizontal plane such that fluid that has escaped from the substrate S due to centrifugal force caused by the rotation of the substrate S is recovered. For example, in the case where the first process is performed in the order of the chemical process by the cleaning agent, the cleaning process by the rinsing agent, and the first drying process by the organic solvent, the cleaning agent is supplied, In the rinsing agent and the organic solvent, the first inflow hole 2431a, the second inflow hole 2431b, and the third inflow may be The hole 2431c is moved to the same horizontal plane as the substrate S to recover the fluid into the first recovery container 2430a, the second recovery container 2430b, and the third recovery container 2430c, respectively. As described above, when the used fluid is recovered, environmental pollution can be prevented, and expensive fluid can be recycled to reduce the semiconductor manufacturing cost.

升降構件2440可使自旋頭2410在第三方向Z上移動,而非移動回收容器2430。 The lifting member 2440 can move the spin head 2410 in the third direction Z instead of moving the recovery container 2430.

下文中,將描述第二處理腔室。 Hereinafter, the second processing chamber will be described.

第二製程係在第二處理腔室2500中執行。此處,第二製程可為用於使用超臨界流體來乾燥基板S之第二乾燥製程。 The second process is performed in the second process chamber 2500. Here, the second process may be a second drying process for drying the substrate S using a supercritical fluid.

超臨界流體表示處於以下狀態中的流體:材料超過臨界溫度及臨界壓力,亦即,材料由於達到臨界狀態而不可歸類於液體及氣態。超臨界流體之分子密度類似於液體之分子密度,且其黏度類似於氣體之黏度。由於超臨界流體具有極高擴散性、滲透性及溶解性,因此超臨界流體具有化學反應之優勢。而且,由於超臨界流體歸因於其極低的表面張力而不會對精細結構施加界面張力,因此,當乾燥半導體器件時,乾燥效率可為極佳的,且可防止圖案破裂。 A supercritical fluid means a fluid in a state in which the material exceeds a critical temperature and a critical pressure, that is, the material cannot be classified into a liquid state and a gaseous state because it reaches a critical state. The molecular density of a supercritical fluid is similar to the molecular density of a liquid, and its viscosity is similar to the viscosity of a gas. Supercritical fluids have the advantage of chemical reactions due to their extremely high diffusivity, permeability and solubility. Moreover, since the supercritical fluid does not apply interfacial tension to the fine structure due to its extremely low surface tension, the drying efficiency can be excellent when the semiconductor device is dried, and pattern cracking can be prevented.

下文中,將描述主要用於乾燥基板S之二氧化碳(CO2)超臨界流體。然而,本發明不限於超臨界流體之成分及種類。 Hereinafter, a carbon dioxide (CO 2 ) supercritical fluid mainly used for drying the substrate S will be described. However, the invention is not limited to the composition and type of supercritical fluid.

圖3為說明二氧化碳之相位轉變的視圖。當二氧化碳溫度為約31.1℃或更高,且其壓力為約7.38 Mpa或更高時,二氧化碳可變為超臨界狀態。二氧化碳可具有無毒、不易燃且惰性的性質。而且,超臨界二氧化碳具有的臨界 溫度及壓力小於其他流體之臨界溫度及壓力。因此,超臨界二氧化碳可在溫度及壓力方面進行調整以容易地控制其溶解性。而且,當與水或其他溶劑相比時,超臨界二氧化碳可具有比水或其他溶劑之擴散係數小約10倍至約100倍的擴散係數以及極低的表面張力。因此,超臨界二氧化碳可具有適於執行乾燥製程之物理性質。而且,二氧化碳可自由各種化學反應產生之副產物再循環。此外,用於乾燥製程中的超臨界二氧化碳可循環且再用以減少環境污染。 Fig. 3 is a view illustrating a phase transition of carbon dioxide. When the carbon dioxide temperature is about 31.1 ° C or higher and the pressure is about 7.38 Mpa or more, the carbon dioxide can be changed to a supercritical state. Carbon dioxide can be non-toxic, non-flammable and inert. Moreover, the criticality of supercritical carbon dioxide Temperature and pressure are less than the critical temperature and pressure of other fluids. Therefore, supercritical carbon dioxide can be adjusted in temperature and pressure to easily control its solubility. Moreover, supercritical carbon dioxide can have a diffusion coefficient that is about 10 to about 100 times less than the diffusion coefficient of water or other solvents and an extremely low surface tension when compared to water or other solvents. Thus, supercritical carbon dioxide can have physical properties suitable for performing a drying process. Moreover, carbon dioxide can be recycled by by-products from various chemical reactions. In addition, supercritical carbon dioxide used in the drying process can be recycled and reused to reduce environmental pollution.

圖4為圖1之第二處理腔室2500的截面圖。第二處理腔室2500包括外殼2510、加熱構件2520、支撐構件2530、超臨界流體供應管2540及排放管線2550。外殼2510的內部可提供與外部密封以乾燥基板S之空間。外殼2510可由足以耐受高壓力之材料形成。用於加熱外殼2510之內部的加熱構件2520可安置於外殼2510之內壁與外壁之間。當然,本發明並不限於加熱構件2520之位置。舉例而言,加熱構件2520可安置於與上述位置不同之位置處。 4 is a cross-sectional view of the second processing chamber 2500 of FIG. 1. The second processing chamber 2500 includes a housing 2510, a heating member 2520, a support member 2530, a supercritical fluid supply tube 2540, and a discharge line 2550. The inside of the outer casing 2510 can provide a space sealed from the outside to dry the substrate S. The outer casing 2510 can be formed of a material that is sufficiently resistant to high pressures. A heating member 2520 for heating the inside of the outer casing 2510 may be disposed between the inner and outer walls of the outer casing 2510. Of course, the invention is not limited to the location of the heating member 2520. For example, the heating member 2520 can be disposed at a position different from the above position.

支撐構件2530支撐基板S。支撐構件2530可為固定的且安裝於外殼2510內。或者,支撐構件2530可不為固定的,但可旋轉以使位於支撐構件2530上之基板S旋轉。 The support member 2530 supports the substrate S. The support member 2530 can be fixed and mounted within the outer casing 2510. Alternatively, the support member 2530 may not be fixed, but may be rotated to rotate the substrate S located on the support member 2530.

超臨界流體供應管2540將超臨界流體供應至外殼2510中。超臨界流體供應管2540包括上部供應管2540a及下部供應管2540b中之至少一者。上部供應管2540a連接至外殼2510之上部部分及超臨界流體供應單元3000。下部供應管2540b連接至外殼2510之下部部分及超臨界流體供應單元3000。上部供應管2540a及下部供應管2540b中之每一者可包括用於調整超臨界流體之流動速率的閥V。閥V可 為切換閥或流量控制閥。因此,可根據第二乾燥製程之進展而經由上部供應管2540a及下部供應管2540b中之至少一者將超臨界流體供應至外殼2510中。此處,下部供應管2540b可自上部供應管2540b分枝。因此,上部供應管2540a及下部供應管2540b可連接至同一超臨界流體供應單元3000。或者,上部供應管2540a及下部供應管2540b可分別彼此不同地連接至超臨界流體供應單元3000。 The supercritical fluid supply pipe 2540 supplies the supercritical fluid into the outer casing 2510. The supercritical fluid supply pipe 2540 includes at least one of an upper supply pipe 2540a and a lower supply pipe 2540b. The upper supply pipe 2540a is connected to the upper portion of the outer casing 2510 and the supercritical fluid supply unit 3000. The lower supply pipe 2540b is connected to the lower portion of the outer casing 2510 and the supercritical fluid supply unit 3000. Each of the upper supply tube 2540a and the lower supply tube 2540b may include a valve V for adjusting the flow rate of the supercritical fluid. Valve V can For switching valves or flow control valves. Accordingly, the supercritical fluid may be supplied into the outer casing 2510 via at least one of the upper supply pipe 2540a and the lower supply pipe 2540b according to the progress of the second drying process. Here, the lower supply tube 2540b can be branched from the upper supply tube 2540b. Therefore, the upper supply pipe 2540a and the lower supply pipe 2540b can be connected to the same supercritical fluid supply unit 3000. Alternatively, the upper supply pipe 2540a and the lower supply pipe 2540b may be connected to the supercritical fluid supply unit 3000 differently from each other, respectively.

外殼2510內之超臨界流體可經由排放管線2550排出。經由排放管線2550排出之超臨界流體可排出至外部,亦即大氣或再循環單元4000。排放管線2550可提供為一個或複數個。舉例而言,第一排放管線2550a可連接至再循環單元4000以將超臨界流體排出至再循環單元4000中,且第二排放管線2550b可將超臨界流體排出至大氣中。當需要外殼2510內之快速減壓時,可經由第二排放管線2550b而非第一排放管線2550a直接將超臨界流體排出至大氣中。 The supercritical fluid within the outer casing 2510 can be discharged via a drain line 2550. The supercritical fluid discharged via the discharge line 2550 can be discharged to the outside, that is, the atmosphere or recirculation unit 4000. The discharge line 2550 can be provided in one or a plurality. For example, the first exhaust line 2550a can be connected to the recirculation unit 4000 to discharge the supercritical fluid into the recirculation unit 4000, and the second exhaust line 2550b can exhaust the supercritical fluid to the atmosphere. When rapid decompression within the outer casing 2510 is required, the supercritical fluid can be directly vented to the atmosphere via the second exhaust line 2550b instead of the first exhaust line 2550a.

閥V可安置於排放管線2550中。排放管線2550可安置於外殼2510下方。或者,排放管線2550可安置於外殼2510上方。 Valve V can be disposed in drain line 2550. A drain line 2550 can be disposed below the outer casing 2510. Alternatively, a drain line 2550 can be disposed over the outer casing 2510.

第二處理腔室2500可進一步包括氣體供應管2560。 The second processing chamber 2500 can further include a gas supply tube 2560.

氣體供應管2560將惰性氣體供應至外殼2510中。此處,惰性氣體可包括N2、He、Ne及Ar。氣體供應管2560連接至外殼2510及氣體供應源G。氣體供應管2560可連接至外殼2510之上部部分。用於調節流動速率之閥V可安置於氣體供應管2560中。 The gas supply pipe 2560 supplies an inert gas into the outer casing 2510. Here, the inert gas may include N 2 , He, Ne, and Ar. The gas supply pipe 2560 is connected to the outer casing 2510 and the gas supply source G. The gas supply pipe 2560 can be coupled to an upper portion of the outer casing 2510. A valve V for adjusting the flow rate may be disposed in the gas supply pipe 2560.

當將氣體供應管2560提供至第二處理腔室2500時,可經由排放管線2550排出惰性氣體。舉例而言,惰性氣體 可經由第二排放管線2550b而排出至大氣中。或者,惰性氣體可經由單獨的第三排放管線(未圖示)而排出至大氣中。 When the gas supply pipe 2560 is supplied to the second process chamber 2500, the inert gas may be exhausted via the discharge line 2550. For example, inert gas It can be discharged to the atmosphere via the second discharge line 2550b. Alternatively, the inert gas may be vented to the atmosphere via a separate third discharge line (not shown).

在第二處理腔室2500中,可考慮到處理效率、佔據面積及其類似者而改變超臨界流體供應管2540、氣體供應管2560及排放管線2550之數目及配置。舉例而言,超臨界流體供應管2540或排放管線2550可安置於外殼2510之側表面上。 In the second processing chamber 2500, the number and configuration of the supercritical fluid supply tube 2540, the gas supply tube 2560, and the discharge line 2550 can be varied in consideration of processing efficiency, footprint, and the like. For example, the supercritical fluid supply tube 2540 or the discharge line 2550 can be disposed on a side surface of the outer casing 2510.

因此,可在第二處理腔室2500中執行使用超臨界流體之第二乾燥製程。舉例而言,在第二處理腔室2500中,可對基板S執行使用超臨界流體之第二乾燥製程,已對該基板S連續地執行化學製程、清潔製程及使用有機溶劑之第一乾燥製程。當藉由傳送機器人2210使基板S位於支撐構件2530上時,加熱構件2520加熱外殼2510之內部,且經由超臨界流體供應管2540供應超臨界流體。因此,超臨界氛圍可形成於外殼2510內。當形成超臨界氛圍時,超臨界流體可溶解殘留於基板S上之有機溶劑,此係因為有機溶劑在有機溶劑使用於在第一處理腔室2300中最後執行之第一乾燥製程中之後並未得以完全乾燥。當充分溶解有機溶劑且乾燥基板S時,經由排放孔排出超臨界流體。接著,藉由傳送機器人2210自支撐構件2530卸載基板S以將其取出。 Accordingly, a second drying process using supercritical fluid can be performed in the second processing chamber 2500. For example, in the second processing chamber 2500, a second drying process using a supercritical fluid may be performed on the substrate S, and the substrate S is continuously subjected to a chemical process, a cleaning process, and a first drying process using an organic solvent. . When the substrate S is placed on the support member 2530 by the transfer robot 2210, the heating member 2520 heats the inside of the outer casing 2510, and supplies the supercritical fluid via the supercritical fluid supply pipe 2540. Therefore, a supercritical atmosphere can be formed in the outer casing 2510. When a supercritical atmosphere is formed, the supercritical fluid can dissolve the organic solvent remaining on the substrate S because the organic solvent is not used after the organic solvent is used in the first drying process that is finally performed in the first processing chamber 2300. It is completely dry. When the organic solvent is sufficiently dissolved and the substrate S is dried, the supercritical fluid is discharged through the discharge holes. Next, the substrate S is unloaded from the support member 2530 by the transfer robot 2210 to take it out.

凍結防止單元5000安置於排放管線2550中以防止所排出之超臨界流體被凍結。圖5為說明圖1之第二處理腔室2500中的超臨界流體排出路徑之視圖。如上所述,第二處理腔室2500可將用於第二乾燥製程中之超臨界流體排出 至大氣或再循環單元3000中。具體而言,當將超臨界流體快速排出至大氣中時,所排出之超臨界流體的壓力及溫度可能會突然改變。結果,超臨界流體自身、排放管線2550或安置於排放管線2550中之閥V可能被凍結。因此,為了防止超臨界流體、排放管線2550或閥V被凍結,可將凍結防止單元5000提供於排放管線2550中。當然,當將超臨界流體排出至再循環單元4000中時,凍結現象可能發生。因此,凍結防止單元5000可提供於第一排放管線2550a、第二排放管線2550b或兩個排放管線2550a及2550b中。必要時,可在第二處理腔室中提供僅一個排放管線2550。此處,凍結防止單元5000可安置於排放管線2550中。 The freeze prevention unit 5000 is disposed in the discharge line 2550 to prevent the discharged supercritical fluid from being frozen. FIG. 5 is a view illustrating a supercritical fluid discharge path in the second processing chamber 2500 of FIG. 1. As described above, the second processing chamber 2500 can discharge the supercritical fluid for use in the second drying process. To the atmosphere or recycling unit 3000. Specifically, when the supercritical fluid is quickly discharged to the atmosphere, the pressure and temperature of the discharged supercritical fluid may suddenly change. As a result, the supercritical fluid itself, the discharge line 2550, or the valve V disposed in the discharge line 2550 may be frozen. Therefore, in order to prevent the supercritical fluid, the discharge line 2550, or the valve V from being frozen, the freeze prevention unit 5000 may be provided in the discharge line 2550. Of course, when the supercritical fluid is discharged into the recycling unit 4000, a freezing phenomenon may occur. Therefore, the freeze prevention unit 5000 can be provided in the first discharge line 2550a, the second discharge line 2550b, or the two discharge lines 2550a and 2550b. Only one discharge line 2550 can be provided in the second processing chamber as necessary. Here, the freeze prevention unit 5000 may be disposed in the discharge line 2550.

圖6為圖5之凍結防止單元5000之截面圖。凍結防止單元5000可包括緩衝構件5100及加熱器5200中之至少一者。緩衝構件5100提供緩衝空間B以防止超臨界流體壓力突然下降,且加熱器5200加熱超臨界流體。 Figure 6 is a cross-sectional view of the freeze prevention unit 5000 of Figure 5. The freeze prevention unit 5000 may include at least one of the buffer member 5100 and the heater 5200. The cushioning member 5100 provides a buffer space B to prevent a sudden drop in supercritical fluid pressure, and the heater 5200 heats the supercritical fluid.

緩衝構件5100可包括外殼5110、流入管5120、排氣管5130、分隔壁5140、吸音構件5150及壓力調節器5160。外殼5110提供緩衝空間B。流入管5120具有連接至排放管線2550之一末端,及連接至外殼5110之一側的另一末端以將超臨界流體供應至緩衝空間B中。排氣管5130具有連接至外殼5110之另一側之一末端,及向外開放或連接至再循環單元4000之另一末端。超臨界流體經由流入管5120而通過緩衝空間B,且排出至排氣管5130中。當將超臨界流體直接排出至大氣中時,超臨界流體可能壓力突然下降,且因此,超臨界流體可能被凍結。另一方面,當超臨界流體通過緩衝空間B時,超臨界流體可能壓力緩慢降 低,以防止超臨界流體被凍結。 The cushioning member 5100 may include a casing 5110, an inflow pipe 5120, an exhaust pipe 5130, a partition wall 5140, a sound absorbing member 5150, and a pressure regulator 5160. The housing 5110 provides a buffer space B. The inflow pipe 5120 has one end connected to one end of the discharge line 2550, and the other end connected to one side of the outer casing 5110 to supply supercritical fluid into the buffer space B. The exhaust pipe 5130 has one end connected to the other side of the outer casing 5110, and is open to the outside or connected to the other end of the recirculation unit 4000. The supercritical fluid passes through the buffer space B via the inflow pipe 5120 and is discharged into the exhaust pipe 5130. When the supercritical fluid is directly discharged to the atmosphere, the supercritical fluid may suddenly drop in pressure, and thus, the supercritical fluid may be frozen. On the other hand, when the supercritical fluid passes through the buffer space B, the supercritical fluid may slowly drop in pressure. Low to prevent the supercritical fluid from freezing.

分隔壁5140可安置於外殼5110內。分隔壁5140可經安置以具有垂直於外殼5110之長度方向的平面。分隔壁5140將緩衝空間B分隔為複數個空間。至少一分隔壁5140可安置於外殼5110內。舉例而言,第一分隔壁5140a、第二分隔壁5140b及第三分隔壁5140c可安置於外殼5110內。因此,自流入管5120朝向排氣管5130可連續地界定第一緩衝空間B1、第二緩衝空間B2、第三緩衝空間B3、及第四緩衝空間B5。 The partition wall 5140 can be disposed within the outer casing 5110. The partition wall 5140 may be disposed to have a plane perpendicular to the length direction of the outer casing 5110. The partition wall 5140 divides the buffer space B into a plurality of spaces. At least one partition wall 5140 can be disposed within the outer casing 5110. For example, the first partition wall 5140a, the second partition wall 5140b, and the third partition wall 5140c may be disposed within the outer casing 5110. Therefore, the first buffer space B1, the second buffer space B2, the third buffer space B3, and the fourth buffer space B5 can be continuously defined from the inflow pipe 5120 toward the exhaust pipe 5130.

供超臨界流體通過之排放孔5141界定於分隔壁5140中。超臨界流體經由排放孔5141流入下一緩衝空間B或排氣管5130中。當在外殼5110之長度方向上檢視時,界定於鄰近於流入管5120而安置之分隔壁5140中之排放孔5141可界定於與安置流入管5120之位置不同的位置。而且,當在外殼5110之長度方向上檢視時,界定於鄰近於排氣管5130而安置之分隔壁5140中之排放孔5141可處於與安置排氣管5130之位置不同的位置。當複數個分隔壁5140安置於外殼5110內時,當在外殼5110之長度方向上檢視時,彼此鄰近之排放孔5141可界定於彼此不同之位置處。 A discharge hole 5141 through which the supercritical fluid passes is defined in the partition wall 5140. The supercritical fluid flows into the next buffer space B or the exhaust pipe 5130 via the discharge hole 5141. When viewed in the longitudinal direction of the outer casing 5110, the discharge hole 5141 defined in the partition wall 5140 disposed adjacent to the inflow pipe 5120 may be defined at a position different from the position at which the inflow pipe 5120 is disposed. Moreover, when viewed in the longitudinal direction of the outer casing 5110, the discharge hole 5141 defined in the partition wall 5140 disposed adjacent to the exhaust pipe 5130 may be at a position different from the position at which the exhaust pipe 5130 is disposed. When a plurality of partition walls 5140 are disposed in the outer casing 5110, when viewed in the longitudinal direction of the outer casing 5110, the discharge holes 5141 adjacent to each other may be defined at positions different from each other.

圖7為說明圖6之緩衝空間B中的超臨界流體前進路徑之視圖。圖8至圖10分別為圖6之第一分隔壁5140a、第二分隔壁5140b及第三分隔壁5140c之視圖。此處,在圖7之緩衝構件5100中可略去吸音構件5150。因為吸音構件5150並非實質組件,因此吸音構件5150可選擇性地提供於緩衝構件5100中。 Figure 7 is a view for explaining the advancement path of the supercritical fluid in the buffer space B of Figure 6. 8 to 10 are views of the first partition wall 5140a, the second partition wall 5140b, and the third partition wall 5140c of Fig. 6, respectively. Here, the sound absorbing member 5150 can be omitted in the cushioning member 5100 of FIG. Since the sound absorbing member 5150 is not a substantial component, the sound absorbing member 5150 can be selectively provided in the cushioning member 5100.

具體而言,在三個分隔壁5140a、5140b及5140c提供 於外殼5110中的情況下,當在外殼5110之長度方向上檢視時,流入管5120安置於外殼5110之一個表面的中央部分中,第一排放孔5141a界定於第一分隔壁5140a之下部部分中,第二排放孔5141b界定於第二分隔壁5140b之上部部分中,第三排放孔5140c界定於第三分隔壁5140c之中央部分中,且排氣管5130安置於外殼5110之下部部分中。因此,超臨界流體並不直接流入緩衝空間B中,而以“之”字形狀流動。因此,超臨界流體可減小流動速率,且在流動中可中斷。而且,超臨界流體可在通過緩衝空間B1、B2、B3及B4時逐漸減小壓力。 Specifically, provided in three partition walls 5140a, 5140b, and 5140c In the case of the outer casing 5110, the inflow pipe 5120 is disposed in a central portion of one surface of the outer casing 5110 when viewed in the longitudinal direction of the outer casing 5110, and the first discharge hole 5141a is defined in the lower portion of the first partition wall 5140a. The second discharge hole 5141b is defined in the upper portion of the second partition wall 5140b, the third discharge hole 5140c is defined in the central portion of the third partition wall 5140c, and the exhaust pipe 5130 is disposed in the lower portion of the outer casing 5110. Therefore, the supercritical fluid does not directly flow into the buffer space B, but flows in a zigzag shape. Therefore, the supercritical fluid can reduce the flow rate and can be interrupted in the flow. Moreover, the supercritical fluid can gradually reduce the pressure as it passes through the buffer spaces B1, B2, B3, and B4.

排放孔5141可界定為一個開口或複數個細小孔。當排放孔5141界定為複數個細小孔時,排放孔可充當超臨界流體流動之阻力,以降低超臨界流體之流動速率。 The discharge hole 5141 may be defined as one opening or a plurality of small holes. When the discharge aperture 5141 is defined as a plurality of fine apertures, the discharge aperture can act as a resistance to supercritical fluid flow to reduce the flow rate of the supercritical fluid.

流入管5120可部分地插入於外殼5110中。圖11為圖6之流入管5120的透視圖。藉以將超臨界流體排出至緩衝空間B中之流入孔5121可界定於流入管5120之插入於外殼5110中之部分中。流入孔5121界定於垂直於外殼5110之長度方向的方向上,以在垂直於外殼5110之長度方向的方向上排出超臨界流體。因此,超臨界流體並不直接自流入管5120流動至排氣管5130。因此,超臨界流體之流動速率可降低以防止超臨界流體壓力突然下降。流入孔5121可界定為複數個細小孔,如同排放孔5141。 The inflow tube 5120 can be partially inserted into the outer casing 5110. Figure 11 is a perspective view of the inflow tube 5120 of Figure 6. The inflow hole 5121 through which the supercritical fluid is discharged into the buffer space B may be defined in a portion of the inflow tube 5120 inserted into the outer casing 5110. The inflow hole 5121 is defined in a direction perpendicular to the length direction of the outer casing 5110 to discharge the supercritical fluid in a direction perpendicular to the length direction of the outer casing 5110. Therefore, the supercritical fluid does not directly flow from the inflow pipe 5120 to the exhaust pipe 5130. Therefore, the flow rate of the supercritical fluid can be lowered to prevent a sudden drop in supercritical fluid pressure. The inflow hole 5121 can be defined as a plurality of fine holes like the discharge hole 5141.

吸音構件5150安置於外殼5110內以吸收自超臨界流體產生的雜訊。圖12為圖6之吸音構件5150的視圖。當超臨界流體壓力下降時,可能出現雜訊。此處,吸音構件5150可吸收雜訊。 The sound absorbing member 5150 is disposed within the outer casing 5110 to absorb noise generated from the supercritical fluid. Figure 12 is a view of the sound absorbing member 5150 of Figure 6. When the supercritical fluid pressure drops, noise may occur. Here, the sound absorbing member 5150 can absorb noise.

吸音構件5150可按金屬絲網結構安置於緩衝空間B中。具有金屬絲網結構之吸音構件5150可中斷超臨界流體在緩衝空間B中之流動,以使超臨界流體之壓力緩慢下降。當超臨界流體壓力突然下降時,可能出現大的雜訊。此處,吸音構件5150可防止大的雜訊發生以降低自超臨界流體產生的雜訊。然而,本發明並不限於具有金屬絲網結構之吸音構件5150。舉例而言,吸音構件5150可具有梳狀結構、格狀結構或毛織物結構。 The sound absorbing member 5150 may be disposed in the buffer space B in a wire mesh structure. The sound absorbing member 5150 having a wire mesh structure can interrupt the flow of the supercritical fluid in the buffer space B, so that the pressure of the supercritical fluid is slowly lowered. When the supercritical fluid pressure suddenly drops, large noise may occur. Here, the sound absorbing member 5150 can prevent large noise from occurring to reduce noise generated from the supercritical fluid. However, the present invention is not limited to the sound absorbing member 5150 having a wire mesh structure. For example, the sound absorbing member 5150 can have a comb structure, a lattice structure, or a wool fabric structure.

吸音構件5150可由不銹鋼形成。超臨界流體在通過緩衝空間B的同時直接接觸吸音構件5150。因此,由不銹鋼形成之吸音構件5150可防止超臨界流體被其污染。具體而言,當使自凍結防止單元5000排出之超臨界流體在再循環單元4000中再循環時,此可具有優勢。 The sound absorbing member 5150 may be formed of stainless steel. The supercritical fluid directly contacts the sound absorbing member 5150 while passing through the buffer space B. Therefore, the sound absorbing member 5150 formed of stainless steel can prevent the supercritical fluid from being contaminated by it. Specifically, this may be advantageous when the supercritical fluid discharged from the freeze prevention unit 5000 is recirculated in the recirculation unit 4000.

壓力調節器5160控制緩衝空間B之內部壓力。壓力調節器5160可為安置於排氣管5130中之逆壓調節器。 The pressure regulator 5160 controls the internal pressure of the buffer space B. The pressure regulator 5160 can be a reverse pressure regulator disposed in the exhaust pipe 5130.

加熱器5200可使用外部電源產生熱以加熱超臨界流體。當超臨界流體被加熱器5200加熱時,其可防止歸因於超臨界流體之凍結現象發生。 The heater 5200 can generate heat using an external power source to heat the supercritical fluid. When the supercritical fluid is heated by the heater 5200, it can prevent the freezing phenomenon due to the supercritical fluid from occurring.

加熱器5200可安置於各種位置處。舉例而言,加熱器5200可安置於外殼5110之外壁之間以加熱外殼5100。對於另一實例,加熱器5200可圍繞外殼5110之外壁。 The heater 5200 can be placed at various locations. For example, the heater 5200 can be disposed between the outer walls of the outer casing 5110 to heat the outer casing 5100. For another example, the heater 5200 can surround the outer wall of the outer casing 5110.

然而,並無必要將加熱器5200安置於外殼5110中/上。圖13及圖14為說明圖6之加熱器520之配置的視圖。舉例而言,加熱器5200可安置於流入管5120或連接至流入管5120之排放管線2550中。或者,凍結防止單元5000除了緩衝構件5100外可僅包括加熱器5200。另一方面,凍結 防止單元5000除了加熱器5200外可僅包括緩衝構件5100。 However, it is not necessary to place the heater 5200 in/on the outer casing 5110. 13 and 14 are views for explaining the configuration of the heater 520 of Fig. 6. For example, the heater 5200 can be disposed in the inflow tube 5120 or in the exhaust line 2550 that is connected to the inflow tube 5120. Alternatively, the freeze prevention unit 5000 may include only the heater 5200 in addition to the buffer member 5100. On the other hand, freezing The prevention unit 5000 may include only the cushioning member 5100 in addition to the heater 5200.

上述凍結防止單元5000可在必要時在排放管線2550中提供為複數個。第二處理腔室可使用在約100巴至約150巴下壓縮之超臨界流體來執行第二乾燥製程。此處,為了增加所排出之超臨界流體之凍結防止效率,可將複數個凍結防止單元5000串聯安置於一個排放管線2550中。而且,如上所述,凍結防止單元5000可安置於自第二處理腔室2500連接至再循環單元4000之排放管線2550中。圖15及圖16為說明圖5之凍結防止單元5000之配置的視圖。 The above-described freeze prevention unit 5000 may be provided in plural in the discharge line 2550 as necessary. The second processing chamber can perform a second drying process using a supercritical fluid that is compressed at about 100 bar to about 150 bar. Here, in order to increase the freeze prevention efficiency of the discharged supercritical fluid, a plurality of freeze prevention units 5000 may be disposed in series in one discharge line 2550. Moreover, as described above, the freeze prevention unit 5000 may be disposed in the discharge line 2550 that is connected from the second process chamber 2500 to the recycle unit 4000. 15 and 16 are views for explaining the configuration of the freeze prevention unit 5000 of Fig. 5.

超臨界流體供應單元3000將超臨界流體供應至第二處理腔室2500中,且再循環單元4000使用於第二處理腔室2500中之超臨界流體再循環,以將再循環之超臨界流體供應至超臨界流體供應單元3000。超臨界流體供應單元3000及再循環單元4000可實現為獨立的單獨器件,或超臨界流體供應單元3000及再循環單元4000之全部或部分可包括於設備100中以作為一個組件來處理基板。 The supercritical fluid supply unit 3000 supplies the supercritical fluid into the second processing chamber 2500, and the recycling unit 4000 uses the supercritical fluid recirculation in the second processing chamber 2500 to supply the recirculated supercritical fluid To the supercritical fluid supply unit 3000. The supercritical fluid supply unit 3000 and the recirculation unit 4000 can be implemented as separate individual devices, or all or a portion of the supercritical fluid supply unit 3000 and the recirculation unit 4000 can be included in the device 100 to process the substrate as one component.

下文中,將描述二氧化碳之超臨界流體。然而,為了便於描述,此僅為實例。超臨界流體可具有不同成分。 Hereinafter, a supercritical fluid of carbon dioxide will be described. However, for the convenience of description, this is merely an example. Supercritical fluids can have different compositions.

圖17為說明超臨界流體之循環路徑的視圖。參看圖17,可對超臨界流體進行再循環,且同時使其在超臨界流體供應單元3000、第二處理腔室2500及再循環單元4000中循環。在循環製程中,凍結防止單元5000可安置於藉以排出超臨界流體之管線中。凍結防止單元5000可安置於對應於圖17之有偏差折痕線的部分之預定位置處。 Figure 17 is a view illustrating a circulation path of a supercritical fluid. Referring to Figure 17, the supercritical fluid can be recirculated while simultaneously circulating in the supercritical fluid supply unit 3000, the second processing chamber 2500, and the recirculation unit 4000. In the circulation process, the freeze prevention unit 5000 may be disposed in a pipeline through which the supercritical fluid is discharged. The freeze prevention unit 5000 may be disposed at a predetermined position corresponding to the portion of the skewed crease line of FIG.

超臨界流體供應單元3000可包括儲存槽3100、供水槽3200、第一冷凝器3300、第二冷凝器3400及泵3500。 The supercritical fluid supply unit 3000 may include a storage tank 3100, a water supply tank 3200, a first condenser 3300, a second condenser 3400, and a pump 3500.

二氧化碳以液體狀態儲存於儲存槽3100中。可自外部或再循環單元400供應二氧化碳,且接著將其儲存於儲存槽3100中。此處,自外部或再循環單元4000供應之二氧化碳可處於氣態。第一冷凝器3300將氣態二氧化碳改變為液態二氧化碳以將液態二氧化碳儲存於儲存槽3100中。由於液態二氧化碳之體積小於氣態二氧化碳之體積,因此可將大量二氧化碳儲存於儲存槽3100中。 The carbon dioxide is stored in the storage tank 3100 in a liquid state. Carbon dioxide may be supplied from the external or recirculating unit 400 and then stored in the storage tank 3100. Here, the carbon dioxide supplied from the external or recirculation unit 4000 may be in a gaseous state. The first condenser 3300 changes the gaseous carbon dioxide to liquid carbon dioxide to store the liquid carbon dioxide in the storage tank 3100. Since the volume of the liquid carbon dioxide is smaller than the volume of the gaseous carbon dioxide, a large amount of carbon dioxide can be stored in the storage tank 3100.

供水槽3200自儲存槽3100接收二氧化碳以產生超臨界流體狀態。接著,超臨界流體供應至處理模組2000之第二處理腔室2500中。當打開將儲存槽3100連接至供水槽3200之閥V時,儲存於儲存槽3100中之二氧化碳移動至供水槽3200中,同時改變為氣態。此處,第二冷凝器3400及泵3500可安置於將儲存槽3100連接至供水槽3200之管線中。第二冷凝器3400將具有氣體狀態之二氧化碳改變為具有液體狀態之二氧化碳。泵3500將液態二氧化碳改變為經由臨界壓力壓縮之氣態二氧化碳,以將氣態二氧化碳供應至供水槽3200中。供水槽3200可在高於臨界溫度之溫度下加熱所供應之二氧化碳,以產生超臨界流體。 The water supply tank 3200 receives carbon dioxide from the storage tank 3100 to generate a supercritical fluid state. The supercritical fluid is then supplied to the second processing chamber 2500 of the processing module 2000. When the valve V connecting the storage tank 3100 to the water supply tank 3200 is opened, the carbon dioxide stored in the storage tank 3100 is moved into the water supply tank 3200 while being changed to a gaseous state. Here, the second condenser 3400 and the pump 3500 may be disposed in a line connecting the storage tank 3100 to the water supply tank 3200. The second condenser 3400 changes the carbon dioxide having a gaseous state to carbon dioxide having a liquid state. The pump 3500 changes the liquid carbon dioxide to gaseous carbon dioxide compressed via a critical pressure to supply the gaseous carbon dioxide into the water supply tank 3200. The water supply tank 3200 can heat the supplied carbon dioxide at a temperature higher than the critical temperature to produce a supercritical fluid.

供水槽3200經由排放管線3210排出所產生之超臨界流體。此處,自供水槽3200排出之二氧化碳可處於在約100巴至約150巴之壓力下壓縮二氧化碳時之狀態。 The water supply tank 3200 discharges the generated supercritical fluid via the discharge line 3210. Here, the carbon dioxide discharged from the water supply tank 3200 may be in a state of compressing carbon dioxide at a pressure of about 100 bar to about 150 bar.

可將排放管線3210提供至供水槽3200。舉例而言,供水槽3200可經由排放管線3210將超臨界流體供應至第二處理腔室2500中。當根據製程之進展而在第二處理腔室2500中需要液態或氣態二氧化碳時,供水槽3200可將液態或氣態二氧化碳供應至第二處理腔室2500中。 The discharge line 3210 can be provided to the water supply tank 3200. For example, the water supply tank 3200 can supply supercritical fluid into the second processing chamber 2500 via a discharge line 3210. The water supply tank 3200 can supply liquid or gaseous carbon dioxide into the second processing chamber 2500 when liquid or gaseous carbon dioxide is required in the second processing chamber 2500 depending on the progress of the process.

複數個排放管線3210可提供至供水槽3200。舉例而言,第一排放管線3210a可連接至第二處理腔室2500,且第二排放管線3210a可將超臨界流體排出至大氣中。當需要檢查供水槽3200或需要對供水槽3200進行內部壓力調整時,可經由第二排放管線3210b將超臨界流體直接排出至大氣中。 A plurality of discharge lines 3210 can be provided to the water supply tank 3200. For example, the first exhaust line 3210a can be coupled to the second processing chamber 2500, and the second exhaust line 3210a can vent the supercritical fluid to the atmosphere. When the water supply tank 3200 needs to be inspected or internal pressure adjustment of the water supply tank 3200 is required, the supercritical fluid can be directly discharged to the atmosphere via the second discharge line 3210b.

如同第二處理腔室2500之排放管線2550,凍結防止單元500可提供於供水槽3200之排放管線3210中。圖18為說明圖17之供水槽中的超臨界流體排出路徑之視圖。儘管在圖18中凍結防止單元5000提供於供水槽3200之彎曲管線3210a及3210b兩者中,供水槽3200包括連接至第二處理腔室2500之第一排放管線3210a及連接至大氣之第二排放管線3210b,但本發明不限於此。舉例而言,凍結防止單元5000可提供於兩個排放管線3210a及3210b中之僅一者中。此處,當僅一個排放管線3210提供至供水槽3200時,凍結防止單元5000可安置於排放管線3210中。 Like the discharge line 2550 of the second processing chamber 2500, the freeze prevention unit 500 may be provided in the discharge line 3210 of the water supply tank 3200. Figure 18 is a view for explaining a supercritical fluid discharge path in the water supply tank of Figure 17; Although the freeze prevention unit 5000 is provided in both of the curved lines 3210a and 3210b of the water supply tank 3200 in FIG. 18, the water supply tank 3200 includes a first discharge line 3210a connected to the second processing chamber 2500 and a second discharge connected to the atmosphere. Line 3210b, but the invention is not limited thereto. For example, the freeze prevention unit 5000 can be provided in only one of the two discharge lines 3210a and 3210b. Here, when only one discharge line 3210 is supplied to the water supply tank 3200, the freeze prevention unit 5000 may be disposed in the discharge line 3210.

圖19為根據本發明之一實施例之圖17的再循環單元之視圖,且圖20為根據本發明之另一實施例之圖17的再循環單元4000之視圖。 Figure 19 is a view of the recycling unit of Figure 17 in accordance with an embodiment of the present invention, and Figure 20 is a view of the recycling unit 4000 of Figure 17 in accordance with another embodiment of the present invention.

再循環單元4000使含有用於第二處理腔室2500中之第二乾燥製程的有機溶劑之超臨界流體再循環,以將再循環之超臨界流體供應至超臨界流體供應單元3000。再循環單元4000可包括分離模組4100及管柱模組4200中之至少一者。 The recycling unit 4000 recirculates the supercritical fluid containing the organic solvent for the second drying process in the second processing chamber 2500 to supply the recycled supercritical fluid to the supercritical fluid supply unit 3000. The recycling unit 4000 can include at least one of the separation module 4100 and the column module 4200.

分離模組4100冷卻二氧化碳以液化含於二氧化碳中之有機溶劑,藉此使有機溶劑與二氧化碳分離。管柱模組4200 允許二氧化碳通過安置有用於吸收有機溶劑之吸收材料A的空間,以使有機溶劑與二氧化碳分離。 The separation module 4100 cools the carbon dioxide to liquefy the organic solvent contained in the carbon dioxide, thereby separating the organic solvent from the carbon dioxide. Column module 4200 The carbon dioxide is allowed to pass through a space in which the absorbing material A for absorbing the organic solvent is disposed to separate the organic solvent from the carbon dioxide.

複數個分離模組4100可提供於再循環單元4000中。此處,分離模組4100可彼此串聯連接。舉例而言,第一分離模組4100a連接至第二處理腔室2500,以使二氧化碳與有機溶劑第一次彼此分離。此處,凍結防止單元500安置於第二處理腔室2500之排放管線2550中以允許經由凍結防止單元5000將超臨界流體引入至分離模組4100中。接著,第二分離模組4100b連接至第一分離模組4100a,以使二氧化碳與有機溶劑第二次彼此分離。因此,二氧化碳與有機溶劑藉由分離模組4100之分離可執行若干次,以獲得較純之二氧化碳。 A plurality of separation modules 4100 can be provided in the recycling unit 4000. Here, the separation modules 4100 can be connected to each other in series. For example, the first separation module 4100a is coupled to the second processing chamber 2500 to separate carbon dioxide from the organic solvent for the first time. Here, the freeze prevention unit 500 is disposed in the discharge line 2550 of the second process chamber 2500 to allow the supercritical fluid to be introduced into the separation module 4100 via the freeze prevention unit 5000. Next, the second separation module 4100b is connected to the first separation module 4100a to separate the carbon dioxide and the organic solvent from each other for the second time. Therefore, the separation of carbon dioxide and organic solvent by the separation module 4100 can be performed several times to obtain relatively pure carbon dioxide.

而且,複數個管柱模組4200可提供於再循環單元4000中。此處,管柱模組4200可彼此串聯連接。而且,二氧化碳與有機溶劑藉由管柱模組4200之分離可執行若干次。舉例而言,第一管柱模組4200a連接至分離模組4100以首先自二氧化碳過濾有機溶劑。接著,第二管柱模組4200b連接至第一管柱模組4200a,以第二次自二氧化碳過濾有機溶劑。 Moreover, a plurality of column modules 4200 can be provided in the recycling unit 4000. Here, the column modules 4200 can be connected to each other in series. Moreover, the separation of carbon dioxide from the organic solvent by the column module 4200 can be performed several times. For example, the first column module 4200a is coupled to the separation module 4100 to first filter the organic solvent from the carbon dioxide. Next, the second column module 4200b is connected to the first column module 4200a to filter the organic solvent from carbon dioxide for the second time.

或者,管柱模組4200可彼此並聯連接。此處,使用管柱模組4200分離有機溶劑可能花費長的時間。而且,使用管柱模組4200可能難以過濾大量二氧化碳。然而,當複數個管柱模組彼此並聯安置時,可過濾大量二氧化碳。舉例而言,第一管柱模組4200a、第二管柱模組4200b及第三管柱模組4200c中之每一者連接至分離模組4100以自二氧化碳過濾有機溶劑,藉此將二氧化碳提供至超臨界流體供應 單元3000中。 Alternatively, the column modules 4200 can be connected in parallel with each other. Here, it may take a long time to separate the organic solvent using the column module 4200. Moreover, it may be difficult to filter a large amount of carbon dioxide using the column module 4200. However, when a plurality of column modules are placed in parallel with each other, a large amount of carbon dioxide can be filtered. For example, each of the first column module 4200a, the second column module 4200b, and the third column module 4200c is connected to the separation module 4100 to filter organic solvent from carbon dioxide, thereby providing carbon dioxide. To supercritical fluid supply In unit 3000.

圖21為圖19之分離模組4100的截面圖。分離模組4100可包括分離槽4110、冷卻構件4120、流入管4130、排氣管4140、排洩管4150及壓力調節器4160。 21 is a cross-sectional view of the separation module 4100 of FIG. 19. The separation module 4100 can include a separation tank 4110, a cooling member 4120, an inflow tube 4130, an exhaust pipe 4140, a drain pipe 4150, and a pressure regulator 4160.

分離槽4110提供在其中使二氧化碳與有機溶劑彼此分離之空間。冷卻構件4120安置於分離槽4110之內壁與外壁之間,以冷卻分離槽4110。冷卻構件4120可實現為供冷卻水流動之管線。 The separation tank 4110 provides a space in which carbon dioxide and an organic solvent are separated from each other. The cooling member 4120 is disposed between the inner wall and the outer wall of the separation groove 4110 to cool the separation groove 4110. The cooling member 4120 can be implemented as a line through which cooling water flows.

自第二處理模組2500排出之二氧化碳引入至流入管4130中。 The carbon dioxide discharged from the second processing module 2500 is introduced into the inflow pipe 4130.

當分離模組4100提供為複數個時,自前一分離模組4100排出之二氧化碳可引入至流入管4130中。流入管4130具有一末端,經由該末端,二氧化碳供應至分離槽4110之下部部分中。供應至分離槽4110之下部部分中的二氧化碳藉由冷卻構件4120冷卻。因此,含於二氧化碳中之有機溶劑經液化以使有機溶劑與二氧化碳分離。 When the separation module 4100 is provided in plural, the carbon dioxide discharged from the previous separation module 4100 can be introduced into the inflow pipe 4130. The inflow pipe 4130 has an end through which carbon dioxide is supplied into the lower portion of the separation groove 4110. The carbon dioxide supplied to the lower portion of the separation tank 4110 is cooled by the cooling member 4120. Therefore, the organic solvent contained in the carbon dioxide is liquefied to separate the organic solvent from the carbon dioxide.

分離之二氧化碳經由連接至分離槽4110之上部部分的排氣管4140而排出,且液態有機溶劑經由連接至分離槽4110之下部部分之排洩管4150而排出。閥V可安置於流入管4130、排氣管4140及排洩管4150中之每一者中以控制流入及排出。 The separated carbon dioxide is discharged through the exhaust pipe 4140 connected to the upper portion of the separation tank 4110, and the liquid organic solvent is discharged through the drain pipe 4150 connected to the lower portion of the separation tank 4110. A valve V may be disposed in each of the inflow pipe 4130, the exhaust pipe 4140, and the drain pipe 4150 to control inflow and discharge.

至少一排氣管4140可提供至分離模組4100。舉例而言,第一排氣管4140a可連接至串聯配置之其他分離模組4100、管柱模組4200或儲存槽3100,且第二排氣管4140b可將二氧化碳直接排出至大氣。此處,自排氣管4140排出之二氧化碳可以氣態或超臨界狀態排出。在此情況下,凍 結防止單元5000可選擇性地安置於分離模組4100之排氣管4140中之每一者中。儘管在圖21中凍結防止單元5000安置於第二排氣管4140b中,但本發明不限於此。舉例而言,凍結防止單元5000可安置於第一排氣管4140a或第一排氣管4140a及第二排氣管4140b兩者中。 At least one exhaust pipe 4140 can be provided to the separation module 4100. For example, the first exhaust pipe 4140a can be connected to other separation modules 4100, the pipe string module 4200 or the storage tank 3100 arranged in series, and the second exhaust pipe 4140b can directly discharge carbon dioxide to the atmosphere. Here, the carbon dioxide discharged from the exhaust pipe 4140 may be discharged in a gaseous state or a supercritical state. In this case, frozen The junction prevention unit 5000 is selectively disposed in each of the exhaust pipes 4140 of the separation module 4100. Although the freeze prevention unit 5000 is disposed in the second exhaust pipe 4140b in FIG. 21, the present invention is not limited thereto. For example, the freeze prevention unit 5000 may be disposed in the first exhaust pipe 4140a or both the first exhaust pipe 4140a and the second exhaust pipe 4140b.

壓力調節器4160調節分離槽4110之內部壓力。舉例而言,壓力調節器4160可為安置於排氣管4140中之逆壓調節器。 The pressure regulator 4160 adjusts the internal pressure of the separation tank 4110. For example, the pressure regulator 4160 can be a reverse pressure regulator disposed in the exhaust pipe 4140.

圖22為圖19之管柱模組4200的視圖。管柱模組4200可包括吸收管柱4210、溫度維持構件4220、流入管4230、排氣管4240及濃度感測器4250。 22 is a view of the column module 4200 of FIG. The column module 4200 can include an absorption column 4210, a temperature maintaining member 4220, an inflow tube 4230, an exhaust tube 4240, and a concentration sensor 4250.

吸收管柱4210提供在其中使有機溶劑與二氧化碳分離之空間。 The absorption column 4210 provides a space in which the organic solvent is separated from the carbon dioxide.

吸收材料A安置於吸收管柱4210內。此處,吸收材料A可為用於吸收有機溶劑之材料。舉例而言,吸收材料A可為沸石。二氧化碳經由流入管4230引入至吸收管柱中。流入管4230可連接至分離模組4100。當管柱模組4200串聯地提供為複數個時,流入管4230可連接至前一管柱模組4200。二氧化碳通過吸收管柱4210,且排出至排氣管4240中。 The absorbent material A is disposed within the absorbent column 4210. Here, the absorbing material A may be a material for absorbing an organic solvent. For example, the absorbent material A can be a zeolite. Carbon dioxide is introduced into the absorption column via an inflow tube 4230. The inflow tube 4230 can be coupled to the separation module 4100. When the column modules 4200 are provided in series, the inflow tube 4230 can be connected to the previous column module 4200. The carbon dioxide passes through the absorption column 4210 and is discharged into the exhaust pipe 4240.

吸收材料A在二氧化碳通過吸收管柱4210的同時提供至二氧化碳,以自二氧化碳吸收有機溶劑。因此,含於二氧化碳中之有機溶劑經移除以使二氧化碳再循環。當二氧化碳與有機溶劑彼此分離時,可能發生熱。因此,溫度維持構件4220可將吸收管柱4210之內部維持在預定溫度,以使得有機溶劑可容易地與二氧化碳分離。 The absorbing material A is supplied to carbon dioxide while carbon dioxide passes through the absorption column 4210 to absorb the organic solvent from the carbon dioxide. Therefore, the organic solvent contained in the carbon dioxide is removed to recycle the carbon dioxide. When carbon dioxide and organic solvents are separated from each other, heat may occur. Therefore, the temperature maintaining member 4220 can maintain the inside of the absorption column 4210 at a predetermined temperature so that the organic solvent can be easily separated from the carbon dioxide.

濃度感測器4250可偵測含於自吸收管柱4210排出之二氧化碳中的有機溶劑之濃度。濃度感測器4250安置於排氣管4240中。當複數個吸收管柱4210串聯地提供時,濃度感測器4250可僅安置於最末吸收管柱4210中。當然,濃度感測器4250可安置於吸收管柱4210中之每一者中。由於能夠由吸收材料A吸收之有機溶劑的量有限,因此當含於經由濃度感測器4250排出之二氧化碳中的有機溶劑的濃度高於預設濃度時,可更換吸收材料A。自管柱模組4200排出之二氧化碳供應至超臨界流體供應單元3000中。 The concentration sensor 4250 can detect the concentration of the organic solvent contained in the carbon dioxide discharged from the absorption column 4210. The concentration sensor 4250 is disposed in the exhaust pipe 4240. When a plurality of absorber strings 4210 are provided in series, the concentration sensor 4250 can be disposed only in the last absorber string 4210. Of course, the concentration sensor 4250 can be disposed in each of the absorption strings 4210. Since the amount of the organic solvent that can be absorbed by the absorbing material A is limited, the absorbing material A can be exchanged when the concentration of the organic solvent contained in the carbon dioxide discharged through the concentration sensor 4250 is higher than the preset concentration. The carbon dioxide discharged from the column module 4200 is supplied to the supercritical fluid supply unit 3000.

儘管在當前實施例中,管柱模組4200連接至再循環單元4000中之分離模組4100,但本發明不限於此。舉例而言,當在再循環單元4000中省略分離模組4100時,管柱模組4200可直接連接至第二處理腔室2500。 Although in the present embodiment, the column module 4200 is connected to the separation module 4100 in the recycling unit 4000, the invention is not limited thereto. For example, when the separation module 4100 is omitted in the recycling unit 4000, the column module 4200 can be directly connected to the second processing chamber 2500.

下文中,將參考根據本發明之用於處理基板之設備100來描述根據本發明之基板處理方法、超臨界流體再循環方法及超臨界流體排出方法。 Hereinafter, a substrate processing method, a supercritical fluid recycling method, and a supercritical fluid discharging method according to the present invention will be described with reference to the apparatus 100 for processing a substrate according to the present invention.

此僅為實例以便於描述,且因此根據本發明之基板處理方法、超臨界流體再循環方法及超臨界流體排出方法可使用能夠執行與基板處理設備100相同或類似之功能的其他基板處理設備來執行,惟根據本發明之用於處理基板之設備100除外。 This is merely an example for convenience of description, and thus the substrate processing method, the supercritical fluid recycling method, and the supercritical fluid discharging method according to the present invention may use other substrate processing apparatuses capable of performing the same or similar functions as the substrate processing apparatus 100. Executing, except for apparatus 100 for processing substrates in accordance with the present invention.

圖23為說明根據本發明之一實施例之基板處理方法的流程圖。根據本發明之實施例之基板處理方法可為使用超臨界流體之清潔製程。 23 is a flow chart illustrating a substrate processing method in accordance with an embodiment of the present invention. The substrate processing method according to an embodiment of the present invention may be a cleaning process using a supercritical fluid.

根據本發明之實施例之基板處理方法包括:將基板S自位於裝載埠1100上的載體C傳送至緩衝腔室2100中 (S110);將基板A自緩衝腔室2100傳送至第一處理腔室2300中(S120);執行第一製程(S130);將第一處理腔室2300傳送至第二處理腔室2500中(S140);執行第二製程(S150);將基板S自第二處理腔室2500傳送至緩衝腔室2100中(S160);及將基板S自緩衝腔室2100傳送至載體C中(170)。下文中,將描述該等製程中之每一者。 The substrate processing method according to an embodiment of the present invention includes: transferring the substrate S from the carrier C located on the loading cassette 1100 to the buffer chamber 2100 (S110); transferring the substrate A from the buffer chamber 2100 to the first processing chamber 2300 (S120); performing the first process (S130); transferring the first processing chamber 2300 to the second processing chamber 2500 ( S140); performing a second process (S150); transferring the substrate S from the second processing chamber 2500 to the buffer chamber 2100 (S160); and transferring the substrate S from the buffer chamber 2100 to the carrier C (170). Hereinafter, each of these processes will be described.

在操作S110中,索引機器人1210將基板S自載體C傳送至緩衝腔室2100中。 In operation S110, the indexing robot 1210 transfers the substrate S from the carrier C into the buffer chamber 2100.

接收自外部傳送之基板S的載體C置放於裝載埠1100上。載體打開器(未圖示)或索引機器人1210打開載體C之門,以使得索引機器人1210自載體C取出基板S。接著,索引機器人1210將自載體C取出之基板傳送至緩衝腔室2100中。 The carrier C received from the externally transferred substrate S is placed on the loading cassette 1100. A carrier opener (not shown) or indexing robot 1210 opens the door of carrier C to cause indexing robot 1210 to remove substrate S from carrier C. Next, the indexing robot 1210 transfers the substrate taken out from the carrier C into the buffer chamber 2100.

在操作S120中,傳送機器人2210將基板S自緩衝腔室2100傳送至第一處理腔室2300中。 In operation S120, the transfer robot 2210 transfers the substrate S from the buffer chamber 2100 into the first processing chamber 2300.

當藉由索引機器人1210將基板S置放於緩衝腔室2100之緩衝狹槽上時,傳送機器人2210將基板S自緩衝狹槽取出。傳送機器人2210將基板S傳送至第一處理腔室2300中。 When the substrate S is placed on the buffer slot of the buffer chamber 2100 by the index robot 1210, the transfer robot 2210 takes out the substrate S from the buffer slot. The transfer robot 2210 transfers the substrate S into the first processing chamber 2300.

在操作S130中,第一處理腔室執行第一製程。圖24為說明根據本發明之一實施例之第一製程的流程圖。 In operation S130, the first processing chamber performs a first process. Figure 24 is a flow chart illustrating a first process in accordance with an embodiment of the present invention.

在操作S131中,藉由傳送機器人2210將基板S置放於支撐銷2412上,且裝載於自旋頭2410上。當基板S置放於支撐銷2412上時,夾持銷2413自拾取位置移動至固定位置以固定基板S。當基板S就座時,在操作S132中,流體供應構件2420將流體供應至基板S上。此處,自旋頭 2410旋轉以使基板S旋轉,同時流體供應至基板S上。因此,流體可均一地供應至基板S之整個表面上。而且,回收容器2430可垂直移動以回收在將流體供應至基板S上之後由於基板S之旋轉而自基板S跳脫之流體。 In operation S131, the substrate S is placed on the support pin 2412 by the transfer robot 2210, and loaded on the spin head 2410. When the substrate S is placed on the support pin 2412, the clamp pin 2413 is moved from the pickup position to the fixed position to fix the substrate S. When the substrate S is seated, the fluid supply member 2420 supplies the fluid onto the substrate S in operation S132. Here, the spin head The 2410 is rotated to rotate the substrate S while the fluid is supplied onto the substrate S. Therefore, the fluid can be uniformly supplied onto the entire surface of the substrate S. Moreover, the recovery container 2430 can be vertically moved to recover the fluid that has escaped from the substrate S due to the rotation of the substrate S after supplying the fluid onto the substrate S.

具體而言,在操作S132a(第一化學製程)中,當基板S就座時,第一流體供應構件2420a自待用位置移動至處理位置,以將第一清潔劑噴灑至基板S上。因此,可移除殘留在基板S上之粒子、有機污染物、金屬雜質及其類似者。此處,第一回收容器2430a之第一流入孔2431a可移動至與基板S相同之水平平面以回收第一清潔劑。 Specifically, in operation S132a (first chemical process), when the substrate S is seated, the first fluid supply member 2420a is moved from the standby position to the processing position to spray the first cleaning agent onto the substrate S. Therefore, particles, organic contaminants, metal impurities, and the like remaining on the substrate S can be removed. Here, the first inflow hole 2431a of the first recovery container 2430a can be moved to the same horizontal plane as the substrate S to recover the first cleaning agent.

接下來,在操作S132b(第一清潔製程)中,第一流體供應構件2420a移動至待用位置,且第二流體供應構件2420b自待用位置移動至處理位置以噴灑沖洗劑。因此,可清潔殘留在基板S上之第一清潔劑之殘餘物。此處,第二回收容器2430b之第二流入孔2431b可移動至與基板S相同之水平平面以回收沖洗劑。 Next, in operation S132b (first cleaning process), the first fluid supply member 2420a is moved to the standby position, and the second fluid supply member 2420b is moved from the standby position to the processing position to spray the rinsing agent. Therefore, the residue of the first cleaning agent remaining on the substrate S can be cleaned. Here, the second inflow hole 2431b of the second recovery container 2430b can be moved to the same horizontal plane as the substrate S to recover the rinsing agent.

接下來,在操作S132c(第一乾燥製程)中,第二流體供應構件2420b返回至待用位置,且第三流體供應構件2420c自待用位置移動至處理位置以噴灑有機溶劑。因此,可以有機溶劑替代殘留於基板S上之沖洗劑。此處,第三回收容器2430c之第三流入孔2431c可移動至與基板S相同之水平平面以回收有機溶劑。而且,可以在大於室溫之溫度下加熱有機溶劑以容易地乾燥有機溶劑的狀態或經加熱之蒸汽狀態來供應有機溶劑。而且,在操作S132c中,自旋頭2410可旋轉基板S,以使得在完成有機溶劑之噴灑之後可容易地乾燥有機溶劑。 Next, in operation S132c (first drying process), the second fluid supply member 2420b is returned to the standby position, and the third fluid supply member 2420c is moved from the standby position to the processing position to spray the organic solvent. Therefore, the rinsing agent remaining on the substrate S can be replaced with an organic solvent. Here, the third inflow hole 2431c of the third recovery container 2430c may be moved to the same horizontal plane as the substrate S to recover the organic solvent. Moreover, the organic solvent may be supplied by heating the organic solvent at a temperature greater than room temperature to easily dry the organic solvent or the heated vapor state. Moreover, in operation S132c, the spin head 2410 can rotate the substrate S so that the organic solvent can be easily dried after completion of the spraying of the organic solvent.

可在操作S132b與操作S132c之間額外地執行第四流體供應構件2420d噴灑第二清潔劑之製程(第二化學製程)及第二流體供應構件2420b再次噴灑沖洗劑之製程(第二清潔製程)。此處,第一清潔劑及第二清潔劑可提供為彼此不同之組分,以分別有效地移除彼此不同之異物。 The process of spraying the second cleaning agent by the fourth fluid supply member 2420d (second chemical process) and the process of spraying the rinsing agent by the second fluid supply member 2420b may be additionally performed between operation S132b and operation S132c (second cleaning process) . Here, the first cleaning agent and the second cleaning agent may be provided as components different from each other to effectively remove foreign substances different from each other, respectively.

而且,在必要時,可省略操作S132c。 Moreover, operation S132c may be omitted as necessary.

當完成流體至基板S上之噴灑時,可完成自旋頭2410之旋轉,且夾持銷2413可自固定位置移動至拾取位置。在操作S133中,可藉由傳送機器人2210拾取基板S,並將基板S自自旋頭2410卸載。 When the spraying of the fluid onto the substrate S is completed, the rotation of the spin head 2410 can be completed, and the clamping pin 2413 can be moved from the fixed position to the pickup position. In operation S133, the substrate S can be picked up by the transfer robot 2210, and the substrate S is unloaded from the spin head 2410.

在操作S140中,傳送機器人2210將基板S自第一處理腔室230傳送至第二處理腔室2500中。 In operation S140, the transfer robot 2210 transfers the substrate S from the first processing chamber 230 to the second processing chamber 2500.

傳送機器人2210拾取位於自旋頭2140上之基板S,以自第一處理腔室2300取出基板。傳送機器人2210將基板S傳送至第二處理腔室2500中。傳送至第二處理腔室2500中之基板S位於支撐構件2530上。 The transfer robot 2210 picks up the substrate S located on the spin head 2140 to take out the substrate from the first processing chamber 2300. The transfer robot 2210 transfers the substrate S into the second processing chamber 2500. The substrate S transferred into the second processing chamber 2500 is located on the support member 2530.

在操作S150中,第二處理腔室2500執行第二製程。圖25為說明根據本發明之一實施例之第二製程的流程圖。 In operation S150, the second processing chamber 2500 performs a second process. Figure 25 is a flow chart illustrating a second process in accordance with an embodiment of the present invention.

在操作S151中,將基板S裝載於第二處理腔室2500之支撐構件2530上。在操作S152中,在裝載基板S前後於外殼2510內形成臨界狀態。此處,臨界狀態可表示溫度及壓力分別超過臨界溫度及臨界壓力之狀態。 In operation S151, the substrate S is loaded on the support member 2530 of the second processing chamber 2500. In operation S152, a critical state is formed in the outer casing 2510 before and after the substrate S is loaded. Here, the critical state may indicate a state in which the temperature and the pressure exceed the critical temperature and the critical pressure, respectively.

在操作S152a中,加熱構件2520加熱外殼2510之內部以形成臨界狀態。因此,外殼2510之內部可增加至大於臨界溫度之溫度。接下來,在操作S152b中,經由氣體供應管2560將惰性氣體引入至外殼2510中。因此,外殼2510 之內部可填充有惰性氣體,且增加至高於臨界壓力之壓力。 In operation S152a, the heating member 2520 heats the inside of the outer casing 2510 to form a critical state. Therefore, the inside of the outer casing 2510 can be increased to a temperature greater than the critical temperature. Next, in operation S152b, an inert gas is introduced into the outer casing 2510 via the gas supply pipe 2560. Therefore, the housing 2510 The interior can be filled with an inert gas and increased to a pressure above the critical pressure.

當形成臨界狀態時,在操作S153中,經由超臨界流體供應管2540將超臨界流體供應至外殼2510中。舉例而言,可如下執行操作S153。 When the critical state is formed, the supercritical fluid is supplied into the outer casing 2510 via the supercritical fluid supply pipe 2540 in operation S153. For example, operation S153 can be performed as follows.

首先,在操作S153a中,可經由下部供應管2540b自外殼2510之下部部分供應超臨界流體。此處,在操作S153b中,可經由排放管線2550將惰性氣體排出至外部。 First, in operation S153a, the supercritical fluid may be supplied from the lower portion of the outer casing 2510 via the lower supply pipe 2540b. Here, in operation S153b, the inert gas may be discharged to the outside via the discharge line 2550.

由於連續地供應超臨界流體且充入惰性氣體,所以外殼2510之內部可僅填充超臨界流體以形成超臨界氛圍。 Since the supercritical fluid is continuously supplied and filled with the inert gas, the inside of the outer casing 2510 can be filled only with the supercritical fluid to form a supercritical atmosphere.

當形成超臨界氛圍時,在操作S153c中停止經由下部供應管2540b供應超臨界流體,以在操作S153d中經由上部供應管2540a供應超臨界流體。因此,可快速地執行使用超臨界流體對基板S之乾燥。在此製程中,由於外殼2510之內部處於臨界狀態,因此基板S可較少受損或不會受損,即使將超臨界流體直接高速地噴灑至基板S上亦如此。 When the supercritical atmosphere is formed, the supply of the supercritical fluid via the lower supply pipe 2540b is stopped in operation S153c to supply the supercritical fluid via the upper supply pipe 2540a in operation S153d. Therefore, the drying of the substrate S using the supercritical fluid can be performed quickly. In this process, since the inside of the outer casing 2510 is in a critical state, the substrate S can be less damaged or damaged, even if the supercritical fluid is directly sprayed onto the substrate S at a high speed.

當乾燥基板S時,在操作S154中排出超臨界流體。此處,可將惰性氣體供應至外殼2510中以排出超臨界流體。 When the substrate S is dried, the supercritical fluid is discharged in operation S154. Here, an inert gas may be supplied to the outer casing 2510 to discharge the supercritical fluid.

在相同情形下,由於基板S未在操作S153中得以充分乾燥,因此可在必要時重複地執行操作S153及S154。圖26為說明超臨界流體之供應及排出的視圖。舉例而言,可在操作S153中供應超臨界流體,直至外殼2510之內部具有為約150巴之壓力為止,且接著可排出超臨界流體,直至外殼2510之內部具有為約100巴之壓力為止。 In the same case, since the substrate S is not sufficiently dried in operation S153, operations S153 and S154 can be repeatedly performed as necessary. Figure 26 is a view for explaining the supply and discharge of supercritical fluid. For example, the supercritical fluid may be supplied in operation S153 until the interior of the outer casing 2510 has a pressure of about 150 bar, and then the supercritical fluid may be discharged until the interior of the outer casing 2510 has a pressure of about 100 bar.

而且,根據實驗,由於觀測到在基板S在超臨界氛圍及惰性氛圍下重複乾燥的情況下,殘留在基板S之電路圖案上的異丙醇之移除速率顯著增加,相比之下,在超臨界 氛圍下,基板S乾燥歷時長的時間,因此可重複地執行兩個操作S153及154以增加乾燥效率。或者,可執行操作S153歷時長的時間以乾燥基板S。 Moreover, according to the experiment, since the drying of the substrate S under the supercritical atmosphere and the inert atmosphere was observed, the removal rate of the isopropyl alcohol remaining on the circuit pattern of the substrate S was remarkably increased, in contrast, Supercritical In the atmosphere, the substrate S is dried for a long time, so that two operations S153 and 154 can be repeatedly performed to increase the drying efficiency. Alternatively, operation S153 may be performed for a long time to dry the substrate S.

當完成超臨界流體之排出時,在操作S155中,排出惰性氣體以減小外殼2510之內部壓力。 When the discharge of the supercritical fluid is completed, the inert gas is exhausted to reduce the internal pressure of the outer casing 2510 in operation S155.

儘管在當前實施例中使用惰性氣體來執行第二乾燥製程,但本發明不限於此。舉例而言,可僅使用超臨界流體而不使用惰性氣體來執行第二乾燥製程。特定言之,可首先供應液態二氧化碳,且接著,可連續地加熱熱態二氧化碳以將液態二氧化碳改變為氣態二氧化碳。接著,可壓縮氣態二氧化碳以形成超臨界氛圍。 Although the inert gas is used in the current embodiment to perform the second drying process, the invention is not limited thereto. For example, the second drying process can be performed using only the supercritical fluid without using an inert gas. Specifically, liquid carbon dioxide may be supplied first, and then, the hot carbon dioxide may be continuously heated to change the liquid carbon dioxide to gaseous carbon dioxide. The gaseous carbon dioxide can then be compressed to form a supercritical atmosphere.

當使用超臨界流體來乾燥基板S時,可防止在使用異丙醇之第一乾燥製程或在旋轉基板S之自旋乾燥製程中出現的粒子、靜電及圖案破裂之產生,且亦可防止水痕在基板S之表面上的產生,以改良半導體器件之效能及良率。 When the supercritical fluid is used to dry the substrate S, generation of particles, static electricity, and pattern cracking occurring in the first drying process using isopropyl alcohol or the spin drying process using the rotating substrate S can be prevented, and water can also be prevented. The generation of marks on the surface of the substrate S improves the performance and yield of the semiconductor device.

在操作S160中,傳送機器人2210將基板S自第二處理腔室2500傳送至緩衝腔室2100中。當完成第二製程時,傳送機器人2210自支撐構件2530卸載基板S以自第二處理腔室2500取出基板S,藉此將基板S安裝於緩衝腔室2100之緩衝狹槽上。 In operation S160, the transfer robot 2210 transfers the substrate S from the second processing chamber 2500 into the buffer chamber 2100. When the second process is completed, the transfer robot 2210 unloads the substrate S from the support member 2530 to take out the substrate S from the second process chamber 2500, thereby mounting the substrate S on the buffer slot of the buffer chamber 2100.

在操作S120、S140及S160中,可藉由彼此不同之傳送機器人2210之臂2213來部分或完整地傳送基板S。舉例而言,在操作S120、S140及S160中之每一者中,可藉由彼此不同之傳送機器人2210之臂2213來傳送基板S。或者,可在操作S120及S140中藉由同一臂2213來傳送基板S,且可在操作S160中藉由不同臂2213來傳送基板S。進 行此操作以防止臂2213之手部被污染,此係因為基板S在操作S120、S140與S160中具有不同狀態,從而二次污染由受污染臂2213傳送至下一操作之基板S。特定言之,在操作S120中,所傳送之基板S可為在執行清潔製程之前的基板S。而且,在操作S140中,基板S可為未經乾燥之基板。亦即,異物、清潔劑、沖洗劑或有機溶劑可能會殘留於基板S上,且因此,臂2213之手部可能被上述材料污染。因此,當藉由在第二製程中被上述材料弄髒之臂2213來拾取基板S時,基板S可能再次受到污染。 In operations S120, S140, and S160, the substrate S may be partially or completely transferred by the arms 2213 of the transfer robot 2210 that are different from each other. For example, in each of operations S120, S140, and S160, the substrate S can be transferred by the arm 2213 of the transfer robot 2210 that is different from each other. Alternatively, the substrate S may be transferred by the same arm 2213 in operations S120 and S140, and the substrate S may be transferred by the different arms 2213 in operation S160. Enter This operation is performed to prevent the hand of the arm 2213 from being contaminated because the substrate S has different states in operations S120, S140, and S160, so that secondary pollution is transmitted from the contaminated arm 2213 to the substrate S of the next operation. Specifically, in operation S120, the transferred substrate S may be the substrate S before the cleaning process is performed. Moreover, in operation S140, the substrate S may be an undried substrate. That is, foreign matter, detergent, rinsing agent or organic solvent may remain on the substrate S, and therefore, the hand of the arm 2213 may be contaminated by the above materials. Therefore, when the substrate S is picked up by the arm 2213 which is soiled by the above material in the second process, the substrate S may be contaminated again.

在操作S170中,索引機器人1210將基板C自緩衝腔室2100傳送至載體C中。索引機器人1210固持安裝在緩衝狹槽上的基板S以將基板安裝在載體C之狹槽上。此處,可使用與用於操作S110中之臂1213不同的臂1213來執行操作S190。因此,如上所述,可防止基板S受到污染。當完全接收到所有基板S時,可藉由懸吊式升降傳送器(OHT)來將載體C傳送至外部。 In operation S170, the indexing robot 1210 transfers the substrate C from the buffer chamber 2100 to the carrier C. The indexing robot 1210 holds the substrate S mounted on the buffer slot to mount the substrate on the slot of the carrier C. Here, operation S190 may be performed using an arm 1213 different from the arm 1213 for operating in S110. Therefore, as described above, the substrate S can be prevented from being contaminated. When all the substrates S are completely received, the carrier C can be transported to the outside by a suspended lift conveyor (OHT).

圖27為說明根據本發明之一實施例之超臨界流體再循環方法的流程圖。根據當前實施例之超臨界流體再循環方法包括:儲存二氧化碳(S210);將二氧化碳改變為超臨界流體(S220);使用該超臨界流體執行乾燥製程(S230);對二氧化碳進行再循環(S240);及儲存再循環之二氧化碳(S250)。下文中,將描述該等製程中之每一者。 27 is a flow chart illustrating a method of supercritical fluid recycling in accordance with an embodiment of the present invention. The supercritical fluid recycling method according to the current embodiment includes: storing carbon dioxide (S210); changing carbon dioxide into a supercritical fluid (S220); performing a drying process using the supercritical fluid (S230); and recycling carbon dioxide (S240) And storing recycled carbon dioxide (S250). Hereinafter, each of these processes will be described.

在操作S210中,將二氧化碳儲存於儲存槽3100中。自外部二氧化碳供應源F或再循環單元4000接收二氧化碳,且以液體狀態儲存。此處,可以氣態接收二氧化碳。因此,第一冷凝器3300可將氣態二氧化碳改變為液態二氧 化碳,以將液態二氧化碳供應至儲存槽3100中。 In operation S210, carbon dioxide is stored in the storage tank 3100. Carbon dioxide is received from an external carbon dioxide supply source F or a recycle unit 4000 and stored in a liquid state. Here, carbon dioxide can be received in a gaseous state. Therefore, the first condenser 3300 can change the gaseous carbon dioxide to the liquid dioxygen Carbon is supplied to supply liquid carbon dioxide into the storage tank 3100.

在操作S220中,供水槽3200將二氧化碳改變為超臨界流體。供水槽3200可自儲存槽3100接收二氧化碳以將二氧化碳改變為超臨界流體。 In operation S220, the water supply tank 3200 changes carbon dioxide to a supercritical fluid. The water supply tank 3200 can receive carbon dioxide from the storage tank 3100 to change the carbon dioxide into a supercritical fluid.

特定言之,自儲存槽3100排出二氧化碳,且將其移動至供水槽3200中。此處,可藉由改變壓力來將二氧化碳改變為氣態二氧化碳。第二冷凝器3400及泵3500安置於連接儲存槽3100與供水槽3200之管線中。第二冷凝器3400將氣態二氧化碳改變為液態二氧化碳,且泵3500將液態二氧化碳改變為高壓氣態二氧化碳,以將高壓氣態二氧化碳供應至供水槽3200中。供水槽3200加熱該高壓氣態二氧化碳以產生超臨界流體。供水槽3200將該超臨界流體提供至第二處理腔室2500中。 Specifically, carbon dioxide is discharged from the storage tank 3100 and moved into the water supply tank 3200. Here, carbon dioxide can be changed to gaseous carbon dioxide by changing the pressure. The second condenser 3400 and the pump 3500 are disposed in a line connecting the storage tank 3100 and the water supply tank 3200. The second condenser 3400 changes the gaseous carbon dioxide to liquid carbon dioxide, and the pump 3500 changes the liquid carbon dioxide to high pressure gaseous carbon dioxide to supply the high pressure gaseous carbon dioxide to the water supply tank 3200. The water supply tank 3200 heats the high pressure gaseous carbon dioxide to produce a supercritical fluid. A water supply tank 3200 provides the supercritical fluid to the second processing chamber 2500.

在操作S230中,第二處理腔室2500使用超臨界流體執行乾燥製程。第二處理腔室2500自供水槽3200接收超臨界流體以使用該超臨界流體來乾燥基板S。此處,該乾燥製程可為上述第二乾燥製程。第二處理腔室2500在乾燥製程期間或乾燥製程之後排出超臨界流體。 In operation S230, the second processing chamber 2500 performs a drying process using the supercritical fluid. The second processing chamber 2500 receives supercritical fluid from the water supply tank 3200 to dry the substrate S using the supercritical fluid. Here, the drying process may be the second drying process described above. The second processing chamber 2500 discharges the supercritical fluid during the drying process or after the drying process.

在操作S240中,再循環單元4000對二氧化碳進行再循環。 In operation S240, the recycling unit 4000 recirculates carbon dioxide.

在操作S241中,分離模組4100冷卻排出之超臨界流體以使有機溶劑與超臨界流體分離。當將超臨界流體引入至分離槽4110中時,冷卻構件4120冷卻超臨界流體以液化溶解於超臨界流體中之有機溶劑,藉此分離出有機溶劑。有機溶劑係經由安置於分離槽4110之下部部分處的排洩管4150而排出,且與有機溶劑分離之二氧化碳係經由安 置於分離槽4110之上部部分處的上部排氣管4140而分離。在經由冷卻超臨界流體之分離中,分離槽4110之內部溫度係重要的。 In operation S241, the separation module 4100 cools the discharged supercritical fluid to separate the organic solvent from the supercritical fluid. When the supercritical fluid is introduced into the separation tank 4110, the cooling member 4120 cools the supercritical fluid to liquefy the organic solvent dissolved in the supercritical fluid, thereby separating the organic solvent. The organic solvent is discharged through a drain pipe 4150 disposed at a lower portion of the separation tank 4110, and the carbon dioxide separated from the organic solvent is passed through The upper exhaust pipe 4140 placed at the upper portion of the separation groove 4110 is separated. In the separation via cooling of the supercritical fluid, the internal temperature of the separation tank 4110 is important.

圖28為說明分離單元4100之效率的曲線圖,且圖29為說明分離單元4100之效率的表格。圖28及圖29說明在分離單元4110具有為約10℃、約20℃及約30℃之內部溫度時所排洩之有機溶劑的量及效率。如上所述,當在為約10℃之溫度下執行操作S241時,可見操作效率與在約30℃之溫度下執行操作S241時相比改良了約10%。 FIG. 28 is a graph illustrating the efficiency of the separation unit 4100, and FIG. 29 is a table illustrating the efficiency of the separation unit 4100. 28 and 29 illustrate the amount and efficiency of the organic solvent excreted when the separation unit 4110 has an internal temperature of about 10 ° C, about 20 ° C, and about 30 ° C. As described above, when the operation S241 is performed at a temperature of about 10 ° C, it is seen that the operation efficiency is improved by about 10% as compared with when the operation S241 is performed at a temperature of about 30 °C.

在操作S242中,管柱模組4200再次使有機溶劑與二氧化碳分離,其中有機溶劑主要藉由分離模組4100而分離。超臨界流體或氣態二氧化碳經由流入管4230而引入以通過吸收管柱4210,且接著排出至排氣管4240中。此處,二氧化碳通過吸收材料A。在此製程中,溶解於二氧化碳中之有機溶劑得以吸收在吸收材料A中。因此,分離出有機溶劑,且經由排氣管4240排出純二氧化碳。因此,可經由上述製程對二氧化碳進行再循環。 In operation S242, the column module 4200 again separates the organic solvent from the carbon dioxide, wherein the organic solvent is mainly separated by the separation module 4100. Supercritical fluid or gaseous carbon dioxide is introduced via the inflow tube 4230 to pass through the absorption column 4210 and then discharged into the exhaust pipe 4240. Here, carbon dioxide passes through the absorbent material A. In this process, an organic solvent dissolved in carbon dioxide is absorbed in the absorbent material A. Therefore, the organic solvent is separated, and pure carbon dioxide is discharged through the exhaust pipe 4240. Therefore, carbon dioxide can be recycled through the above process.

在操作S250中,再循環單元4000將再循環之二氧化碳提供至儲存槽3100中。當完成再循環製程時,將二氧化碳移動且儲存於儲存槽3100中。此處,自再循環單元4000排出之二氧化碳處於氣態。因此,氣態二氧化碳藉由第一冷凝器3300而改變為液態二氧化碳,且儲存於儲存槽3100中。 In operation S250, the recycling unit 4000 supplies the recycled carbon dioxide to the storage tank 3100. When the recycling process is completed, the carbon dioxide is moved and stored in the storage tank 3100. Here, the carbon dioxide discharged from the recirculation unit 4000 is in a gaseous state. Therefore, the gaseous carbon dioxide is changed to liquid carbon dioxide by the first condenser 3300 and stored in the storage tank 3100.

圖30為說明根據本發明之一實施例之超臨界流體排出方法的流程圖。根據當前實施例之超臨界流體排出方法包括:自容器排出超臨界流體(S310);將超臨界流體引入至 緩衝構件5100中(S320);對超臨界流體減壓(S330);加熱超臨界流體(S340);吸收自超臨界流體產生之雜訊(S350);及自緩衝構件5100排出超臨界流體。下文中,將描述該等製程中之每一者。 30 is a flow chart illustrating a method of supercritical fluid discharge in accordance with an embodiment of the present invention. The supercritical fluid discharge method according to the current embodiment includes: discharging a supercritical fluid from the container (S310); introducing the supercritical fluid to In the buffer member 5100 (S320); depressurizing the supercritical fluid (S330); heating the supercritical fluid (S340); absorbing noise generated from the supercritical fluid (S350); and discharging the supercritical fluid from the buffer member 5100. Hereinafter, each of these processes will be described.

在操作S310中,經由排放管線自容器排出超臨界流體。 In operation S310, the supercritical fluid is discharged from the container via a discharge line.

此處,容器可表示用於供應超臨界流體之腔室或槽。舉例而言,容器可包括第二處理腔室2500、供水槽3200,或分離模組4100之分離槽4110。 Here, the container may represent a chamber or tank for supplying a supercritical fluid. For example, the container can include a second processing chamber 2500, a water supply tank 3200, or a separation tank 4110 of the separation module 4100.

而且,排放管線可表示用於排出超臨界流體之綜合管。舉例而言,排放管線可包括第二處理腔室2500之排放管線2550、供水槽3200之排放管線3210,或分離槽4110之排氣管4140。 Moreover, the discharge line can represent a composite tube for discharging supercritical fluid. For example, the discharge line may include a discharge line 2550 of the second process chamber 2500, a discharge line 3210 of the water supply tank 3200, or an exhaust pipe 4140 of the separation tank 4110.

在將複數個排放管線提供至每一容器的情況下,當經由複數個排放管線之部分或總體排放管線排出超臨界流體時,可利用根據本發明之當前實施例之超臨界流體排出方法。舉例而言,當將用於將超臨界流體供應至再循環單元5000之第一排放管線2550a及用於將超臨界流體排出至大氣中的第二排放管線2550b提供至第二處理腔室2500時,可將根據當前實施例之超臨界流體排出方法應用於以下情況:經由第一排放管線2550a排出超臨界流體、經由第二排放管線2550b排出超臨界流體,或經由兩個排放管線2550a及2550b排出超臨界流體。對於供水槽3200或分離模組4110為相同情況。 In the case where a plurality of discharge lines are supplied to each of the containers, the supercritical fluid discharge method according to the current embodiment of the present invention can be utilized when the supercritical fluid is discharged through a portion of the plurality of discharge lines or the entire discharge line. For example, when the first discharge line 2550a for supplying the supercritical fluid to the recirculation unit 5000 and the second discharge line 2550b for discharging the supercritical fluid to the atmosphere are supplied to the second processing chamber 2500 The supercritical fluid discharge method according to the current embodiment can be applied to the case where the supercritical fluid is discharged via the first discharge line 2550a, the supercritical fluid is discharged via the second discharge line 2550b, or discharged through the two discharge lines 2550a and 2550b. Supercritical fluid. The same is true for the water supply tank 3200 or the separation module 4110.

如上所述,可自容器排出超臨界流體。舉例而言,排出製程可為根據一實施例之基板處理設備中之操作S154、在根據一實施例之超臨界流體再循環方法中的操作S220與 操作S230之間執行的超臨界流體排出製程、在操作S230與操作S240之間執行的超臨界流體排出製程,或在操作S241與操作S242之間執行的超臨界流體排出製程。超臨界流體排出製程不限於上述製程。舉例而言,排出製程可包括清潔容器內部之情況、需要快速排出容器中所儲存之超臨界流體之情況,或將超臨界流體排出至大氣中之情況。 As noted above, the supercritical fluid can be discharged from the vessel. For example, the discharge process may be operation S154 in the substrate processing apparatus according to an embodiment, operation S220 in the supercritical fluid recycling method according to an embodiment, and The supercritical fluid discharge process performed between operation S230, the supercritical fluid discharge process performed between operation S230 and operation S240, or the supercritical fluid discharge process performed between operation S241 and operation S242. The supercritical fluid discharge process is not limited to the above process. For example, the discharge process may include the case of cleaning the inside of the container, the need to quickly discharge the supercritical fluid stored in the container, or the discharge of the supercritical fluid into the atmosphere.

在操作S320中,將超臨界流體引入至緩衝腔室5100中。經由流入管5120將經由排放管線自容器排出之超臨界流體引入至外殼5110中。流入孔5121可在與外殼5110之長度方向垂直的方向上形成於流入管5120中。此處,超臨界流體係在垂直於外殼5110之長度方向的方向上排出。因此,可防止超臨界流體在外殼5110之長度方向上流動,從而降低流動速率且延遲壓力下降。 The supercritical fluid is introduced into the buffer chamber 5100 in operation S320. The supercritical fluid discharged from the container via the discharge line is introduced into the outer casing 5110 via the inflow pipe 5120. The inflow hole 5121 may be formed in the inflow pipe 5120 in a direction perpendicular to the longitudinal direction of the outer casing 5110. Here, the supercritical flow system is discharged in a direction perpendicular to the length direction of the outer casing 5110. Therefore, the supercritical fluid can be prevented from flowing in the length direction of the outer casing 5110, thereby reducing the flow rate and delaying the pressure drop.

在操作S330中,在通過緩衝空間B的同時使延遲壓力下降減壓。緩衝空間B可藉由分隔壁5140劃分為複數個空間。超臨界流體在通過該複數個空間的同時逐漸減壓。因此,可防止超臨界流體壓力突然下降,從而防止超臨界流體被凍結。此處,如上所述,由於細小排放孔5141在彼此不同之位置形成於分隔壁5140中,因此超臨界流體可按“之”字形狀流動,而不會以直線形狀流動。因此,可延遲超臨界流體之流動,且因此,超臨界流體之壓力可緩慢地下降。 In operation S330, the delay pressure is decreased and decompressed while passing through the buffer space B. The buffer space B can be divided into a plurality of spaces by the partition wall 5140. The supercritical fluid is gradually depressurized while passing through the plurality of spaces. Therefore, a sudden drop in the supercritical fluid pressure can be prevented, thereby preventing the supercritical fluid from being frozen. Here, as described above, since the fine discharge holes 5141 are formed in the partition wall 5140 at positions different from each other, the supercritical fluid can flow in a zigzag shape without flowing in a straight shape. Therefore, the flow of the supercritical fluid can be delayed, and therefore, the pressure of the supercritical fluid can be slowly lowered.

在操作S340中,加熱器5200加熱超臨界流體。因此,可防止超臨界流體溫度突然下降,從而防止超臨界流體被凍結。加熱器5200安置於外殼5110中以加熱外殼5110。因此,可加熱通過外殼5110之超臨界流體。或者,加熱器 5200可安置於流入管5120或排放管線中以加熱通過流入管5120或排放管線之超臨界流體。 The heater 5200 heats the supercritical fluid in operation S340. Therefore, the sudden drop in the temperature of the supercritical fluid can be prevented, thereby preventing the supercritical fluid from being frozen. The heater 5200 is disposed in the outer casing 5110 to heat the outer casing 5110. Thus, the supercritical fluid passing through the outer casing 5110 can be heated. Or, heater The 5200 can be disposed in the inflow tube 5120 or the discharge line to heat the supercritical fluid passing through the inflow tube 5120 or the discharge line.

在操作S350中,吸音構件5150吸收自超臨界流體產生之雜訊。吸音構件5150安置於外殼5110內以提供供超臨界流體通過之路徑。因此,在超臨界流體壓力下降時產生的雜訊可吸收至吸音構件5150中。超臨界流體之壓力下降寬度增加愈多,雜訊強度增加愈多。因此,吸音構件5150具有之結構中斷超臨界流體之流動,以降低超臨界流體之流動速率,藉此允許超臨界流體的壓力緩慢下降。因此,可減少自超臨界流體產生之雜訊。 In operation S350, the sound absorbing member 5150 absorbs noise generated from the supercritical fluid. A sound absorbing member 5150 is disposed within the outer casing 5110 to provide a path for the supercritical fluid to pass. Therefore, noise generated when the supercritical fluid pressure is lowered can be absorbed into the sound absorbing member 5150. The more the pressure drop width of the supercritical fluid increases, the more the noise intensity increases. Accordingly, the sound absorbing member 5150 has a structure that interrupts the flow of the supercritical fluid to reduce the flow rate of the supercritical fluid, thereby allowing the pressure of the supercritical fluid to slowly decrease. Therefore, noise generated from the supercritical fluid can be reduced.

在操作S370中,經由排氣管5130自緩衝構件排出超臨界流體。經由排氣管5130自外殼5110排出通過外殼5110之緩衝空間B之超臨界流體。壓力調節器5160可安置於排氣管5130中,以恆定地維持緩衝空間B內之壓力。 In operation S370, the supercritical fluid is discharged from the buffer member via the exhaust pipe 5130. The supercritical fluid passing through the buffer space B of the outer casing 5110 is discharged from the outer casing 5110 via the exhaust pipe 5130. A pressure regulator 5160 can be disposed in the exhaust pipe 5130 to constantly maintain the pressure within the buffer space B.

可將經由排氣管5130排出之超臨界流體排出至大氣或基板處理設備100之其他組件中。舉例而言,可將自第二處理腔室2500排出之超臨界流體供應至再循環單元400中,或可將自供水槽3200排出之超臨界流體供應至第二處理腔室2500中。 The supercritical fluid discharged through the exhaust pipe 5130 may be discharged to the atmosphere or other components of the substrate processing apparatus 100. For example, the supercritical fluid discharged from the second processing chamber 2500 may be supplied to the recirculation unit 400, or the supercritical fluid discharged from the water supply tank 3200 may be supplied into the second processing chamber 2500.

根據該超臨界流體排出方法,可防止在排出超臨界流體時超臨界流體的壓力突然下降,從而防止超臨界流體被凍結。而且,可防止排放管線及安置於排放管線中之閥因為超臨界流體之凍結而被凍結。 According to the supercritical fluid discharge method, the sudden pressure drop of the supercritical fluid at the time of discharging the supercritical fluid can be prevented, thereby preventing the supercritical fluid from being frozen. Moreover, it is possible to prevent the discharge line and the valve disposed in the discharge line from being frozen due to the freezing of the supercritical fluid.

而且,可減少歸因於超臨界流體之突然壓力下降而產生之雜訊。而且,可將所產生之雜訊吸收至吸音構件中以減少總體雜訊。 Moreover, noise generated due to sudden pressure drop of the supercritical fluid can be reduced. Moreover, the generated noise can be absorbed into the sound absorbing member to reduce overall noise.

在根據本發明之上述基板處理方法、超臨界流體再循環方法、超臨界流體排出方法中,在每一實施例中執行之製程皆並非必需的。因此,每一實施例可選擇性地包括上述製程。另外,該等實施例可藉由彼此分離或組合而實現。而且,在每一實施例中執行之製程可藉由使另一實施例中執行之製程彼此分離或組合而實現。 In the above substrate processing method, supercritical fluid recycling method, supercritical fluid discharging method according to the present invention, the processes performed in each of the embodiments are not essential. Thus, each embodiment can optionally include the processes described above. Additionally, the embodiments can be implemented by being separated or combined with one another. Moreover, the processes performed in each embodiment can be implemented by separating processes or processes in another embodiment.

而且,並無必要根據所述次序連續地執行在每一實施例中執行之製程。舉例而言,稍後描述之製程可先於先前描述之製程而執行。 Moreover, it is not necessary to continuously execute the processes executed in each embodiment in accordance with the stated order. For example, the process described later can be performed prior to the previously described process.

根據本發明,可防止自處理腔室或供水槽排出之超臨界流體被凍結。 According to the present invention, it is possible to prevent the supercritical fluid discharged from the processing chamber or the water supply tank from being frozen.

根據本發明,可藉由緩衝構件來防止超臨界流體壓力突然下降。 According to the present invention, a sudden drop in supercritical fluid pressure can be prevented by the cushioning member.

根據本發明,在超臨界流體成功地通過緩衝空間內之複數個空間時,可使超臨界流體逐漸減壓。 According to the present invention, the supercritical fluid can be gradually decompressed when the supercritical fluid successfully passes through a plurality of spaces in the buffer space.

根據本發明,可藉由分隔壁或緩衝空間內之吸音構件來中斷超臨界流體之流動。 According to the present invention, the flow of the supercritical fluid can be interrupted by the sound absorbing members in the partition wall or the buffer space.

根據本發明,可藉由加熱器加熱所排出之超臨界流體,以防止超臨界流體被凍結。 According to the present invention, the discharged supercritical fluid can be heated by a heater to prevent the supercritical fluid from being frozen.

根據本發明,可藉由吸音構件減少在排出超臨界流體時所產生之雜訊。 According to the present invention, noise generated when the supercritical fluid is discharged can be reduced by the sound absorbing member.

根據本發明,由於可防止在排出超臨界流體時超臨界流體被凍結,因此可順暢地執行半導體製造製程以改良基板之良率。 According to the present invention, since the supercritical fluid is prevented from being frozen when the supercritical fluid is discharged, the semiconductor manufacturing process can be smoothly performed to improve the yield of the substrate.

本發明之特徵不限於上述特徵,而熟習此項技術者自此說明書及隨附圖式將清楚地理解本文中未描述之其他特 徵。 The features of the present invention are not limited to the above-described features, and those skilled in the art will clearly understand other features not described herein from the description and the accompanying drawings. Sign.

儘管已展示及描述本發明之特定實施例,但應理解,其他修改、更改及替代對於一般熟習此項技術者係顯而易見的。可在不脫離本發明之精神及範疇的情況下進行此種修改、更改及替代,且此種修改、更改及替代不受前述實施例及隨附圖式之限制。而且,上述實施例之部分或全部可選擇性地組合及建構,以使得各種修改係可能的,而不會受限地應用上述實施例之構造及方案。 Although specific embodiments of the invention have been shown and described, it will be understood that Such modifications, changes and substitutions may be made without departing from the spirit and scope of the invention, and such modifications, changes and substitutions are not limited by the foregoing embodiments and the accompanying drawings. Moreover, some or all of the above-described embodiments may be selectively combined and constructed so that various modifications are possible without limitation to the configuration and arrangement of the above embodiments.

100‧‧‧用於處理基板之設備 100‧‧‧Devices for processing substrates

1000‧‧‧索引模組 1000‧‧‧ index module

1100‧‧‧裝載埠 1100‧‧‧Loading equipment

1200‧‧‧傳送框 1200‧‧‧Transfer box

1210‧‧‧索引機器人 1210‧‧‧ indexing robot

1211‧‧‧基座 1211‧‧‧Base

1212‧‧‧本體 1212‧‧‧ Ontology

1213‧‧‧臂 1213‧‧‧ Arm

1220‧‧‧索引軌 1220‧‧‧ index track

2000‧‧‧處理模組 2000‧‧‧Processing module

2100‧‧‧緩衝腔室 2100‧‧‧ buffer chamber

2200‧‧‧傳送腔室 2200‧‧‧Transfer chamber

2210‧‧‧傳送機器人 2210‧‧‧Transfer robot

2211‧‧‧基座 2211‧‧‧Base

2212‧‧‧本體 2212‧‧‧ Ontology

2213‧‧‧臂 2213‧‧‧ Arm

2220‧‧‧傳送軌 2220‧‧‧Transport

2300‧‧‧第一處理腔室 2300‧‧‧First processing chamber

2310‧‧‧外殼 2310‧‧‧Shell

2400‧‧‧處理單元 2400‧‧‧Processing unit

2410‧‧‧自旋頭 2410‧‧‧Rotating head

2411‧‧‧支撐板 2411‧‧‧Support board

2412‧‧‧支撐銷 2412‧‧‧Support pin

2413‧‧‧夾持銷 2413‧‧‧Clamp pin

2414‧‧‧旋轉軸 2414‧‧‧Rotary axis

2415‧‧‧馬達 2415‧‧‧Motor

2420‧‧‧流體供應構件 2420‧‧‧ Fluid supply components

2421‧‧‧噴嘴 2421‧‧‧Nozzles

2422‧‧‧支撐件 2422‧‧‧Support

2423‧‧‧支撐軸 2423‧‧‧Support shaft

2424‧‧‧驅動器 2424‧‧‧ drive

2430‧‧‧回收容器 2430‧‧‧Recycling container

2430a‧‧‧第一回收容器 2430a‧‧‧First recycling container

2430b‧‧‧第二回收容器 2430b‧‧‧Second recycling container

2430c‧‧‧第三回收容器 2430c‧‧‧ third recycling container

2431‧‧‧流入孔 2431‧‧‧Inflow hole

2431a‧‧‧第一流入孔 2431a‧‧‧First inflow hole

2431b‧‧‧第二流入孔 2431b‧‧‧Second inflow hole

2431c‧‧‧第三流入孔 2431c‧‧‧ third inflow hole

2432‧‧‧回收管線 2432‧‧‧Recycling pipeline

2432a‧‧‧第一回收管線 2432a‧‧‧First recovery pipeline

2432b‧‧‧第二回收管線 2432b‧‧‧Second recovery pipeline

2432c‧‧‧第三回收管線 2432c‧‧‧ Third recovery pipeline

2440‧‧‧升降構件 2440‧‧‧ lifting member

2441‧‧‧托架 2441‧‧‧ bracket

2442‧‧‧升降軸 2442‧‧‧ Lifting shaft

2443‧‧‧升降機 2443‧‧‧ Lifts

2500‧‧‧第二處理腔室 2500‧‧‧Second processing chamber

2510‧‧‧外殼 2510‧‧‧Shell

2520‧‧‧加熱構件 2520‧‧‧heating components

2530‧‧‧支撐構件 2530‧‧‧Support members

2540‧‧‧超臨界流體供應管 2540‧‧‧Supercritical fluid supply tube

2540a‧‧‧上部供應管 2540a‧‧‧Upper supply tube

2540b‧‧‧下部供應管 2540b‧‧‧Lower supply tube

2550‧‧‧排放管線 2550‧‧‧Drainage line

2550a‧‧‧第一排放管線 2550a‧‧‧First discharge line

2550b‧‧‧第二排放管線 2550b‧‧‧Second discharge line

2560‧‧‧氣體供應管 2560‧‧‧ gas supply pipe

3000‧‧‧超臨界流體供應單元 3000‧‧‧Supercritical Fluid Supply Unit

3100‧‧‧儲存槽 3100‧‧‧ storage tank

3200‧‧‧供水槽 3200‧‧‧Water supply tank

3210a‧‧‧第一排放管線 3210a‧‧‧First discharge line

3210b‧‧‧第二排放管線 3210b‧‧‧Second discharge line

3300‧‧‧第一冷凝器 3300‧‧‧First condenser

3400‧‧‧第二冷凝器 3400‧‧‧second condenser

3500‧‧‧泵 3500‧‧‧ pump

4000‧‧‧再循環單元 4000‧‧‧Recycling unit

4100‧‧‧分離模組 4100‧‧‧Separation module

4100a‧‧‧第一分離模組 4100a‧‧‧First separation module

4100b‧‧‧第二分離模組 4100b‧‧‧Second separation module

4120‧‧‧冷卻構件 4120‧‧‧Cooling components

4130‧‧‧流入管 4130‧‧‧Inflow pipe

4140‧‧‧排氣管 4140‧‧‧Exhaust pipe

4140a‧‧‧第一排氣管 4140a‧‧‧First exhaust pipe

4140b‧‧‧第二排氣管 4140b‧‧‧Second exhaust pipe

4150‧‧‧排洩管 4150‧‧‧Drainage tube

4160‧‧‧壓力調節器 4160‧‧‧pressure regulator

4200‧‧‧管柱模組 4200‧‧‧Pipe module

4200a‧‧‧第一管柱模組 4200a‧‧‧First column module

4200b‧‧‧第二管柱模組 4200b‧‧‧Second column module

4200c‧‧‧第三管柱模組 4200c‧‧‧Three column module

4210‧‧‧吸收管柱 4210‧‧‧absorbing column

4220‧‧‧溫度維持構件 4220‧‧‧ Temperature maintenance component

4230‧‧‧流入管 4230‧‧‧Inflow pipe

4240‧‧‧排氣管 4240‧‧‧Exhaust pipe

4250‧‧‧濃度感測器 4250‧‧‧ concentration sensor

5000‧‧‧凍結防止單元 5000‧‧‧Freeze prevention unit

5100‧‧‧緩衝構件 5100‧‧‧ cushioning members

5110‧‧‧外殼 5110‧‧‧Shell

5120‧‧‧流入管 5120‧‧‧Inflow pipe

5121‧‧‧流入孔 5121‧‧‧Inflow hole

5130‧‧‧排氣管 5130‧‧‧Exhaust pipe

5140‧‧‧分隔壁 5140‧‧‧ partition wall

5140a‧‧‧第一分隔壁 5140a‧‧‧First dividing wall

5140b‧‧‧第二分隔壁 5140b‧‧‧Second dividing wall

5140c‧‧‧第三分隔壁 5140c‧‧‧ third dividing wall

5141‧‧‧排放孔 5141‧‧‧Drain hole

5141a‧‧‧第一排放孔 5141a‧‧‧First discharge hole

5141b‧‧‧第二排放孔 5141b‧‧‧second discharge hole

5141c‧‧‧第三排放孔 5141c‧‧‧ third discharge hole

5150‧‧‧吸音構件 5150‧‧‧Acoustic components

5160‧‧‧壓力調節器 5160‧‧‧pressure regulator

5200‧‧‧加熱器 5200‧‧‧heater

A‧‧‧吸收材料 A‧‧‧Absorbent materials

B‧‧‧緩衝空間 B‧‧‧ buffer space

B1‧‧‧第一緩衝空間 B1‧‧‧First buffer space

B2‧‧‧第二緩衝空間 B2‧‧‧Second buffer space

B3‧‧‧第三緩衝空間 B3‧‧‧ third buffer space

B4‧‧‧第四緩衝空間 B4‧‧‧fourth buffer space

C‧‧‧載體 C‧‧‧ Carrier

F‧‧‧外部二氧化碳供應源 F‧‧‧External carbon dioxide supply

G‧‧‧氣體供應源 G‧‧‧ gas supply source

S‧‧‧基板 S‧‧‧Substrate

X‧‧‧第一方向 X‧‧‧ first direction

Y‧‧‧第二方向 Y‧‧‧second direction

Z‧‧‧第三方向 Z‧‧‧ third direction

圖1為根據本發明之一實施例之用於處理基板之設備的平面圖;圖2為圖1之第一處理腔室的截面圖;圖3為說明二氧化碳之相位轉變的視圖;圖4為圖1之第二處理腔室的截面圖;圖5為說明圖1之第二處理腔室中的超臨界流體排出路徑之視圖;圖6為圖5之凍結防止單元之截面圖;圖7為說明圖6之緩衝空間中的超臨界流體前進路徑之視圖;圖8至圖10分別為圖6之第一分隔壁、第二分隔壁及第三分隔壁之視圖;圖11為圖6之流入管的透視圖;圖12為圖6之吸音構件的視圖;圖13及圖14為說明圖6之加熱器之配置的視圖;圖15及圖16為說明圖5之凍結防止單元之配置的視 圖;圖17為說明超臨界流體之循環路徑的視圖;圖18為說明圖17之供水槽的超臨界流體排出路徑之視圖;圖19為根據本發明之一實施例之圖17的再循環單元之視圖;圖20為根據本發明之另一實施例之圖17的再循環單元4000之視圖;圖21為圖19之分離模組4100的截面圖;圖22為圖19之管柱模組4200的視圖;圖23為說明根據本發明之一實施例之用於處理基板之製程的流程圖;圖24為說明根據本發明之一實施例之第一製程的流程圖;圖25為說明根據本發明之一實施例之第二製程的流程圖;圖26為說明超臨界流體之供應及排出的視圖;圖27為說明根據本發明之一實施例之用於使超臨界流體再循環之製程的流程圖;圖28為說明分離單元之效率的曲線圖;圖29為說明分離單元之效率的表格;及圖30為說明根據本發明之一實施例之用於排出超臨界流體之製程的流程圖。 1 is a plan view of an apparatus for processing a substrate according to an embodiment of the present invention; FIG. 2 is a cross-sectional view of the first processing chamber of FIG. 1; FIG. 3 is a view illustrating a phase transition of carbon dioxide; 1 is a cross-sectional view of a second processing chamber; FIG. 5 is a view illustrating a supercritical fluid discharge path in the second processing chamber of FIG. 1; FIG. 6 is a cross-sectional view of the freezing prevention unit of FIG. 5; Figure 6 is a view of the first partition wall, the second partition wall and the third partition wall of Figure 6; Figure 11 is the inflow pipe of Figure 6; Figure 12 is a view of the sound absorbing member of Figure 6; Figures 13 and 14 are views for explaining the arrangement of the heater of Figure 6; and Figures 15 and 16 are views for explaining the configuration of the freeze prevention unit of Figure 5 Figure 17 is a view illustrating a circulation path of a supercritical fluid; Figure 18 is a view illustrating a supercritical fluid discharge path of the water supply tank of Figure 17; Figure 19 is a recycling unit of Figure 17 according to an embodiment of the present invention; 20 is a view of the recirculation unit 4000 of FIG. 17 according to another embodiment of the present invention; FIG. 21 is a cross-sectional view of the separation module 4100 of FIG. 19; and FIG. 22 is a column module 4200 of FIG. Figure 23 is a flow chart illustrating a process for processing a substrate in accordance with an embodiment of the present invention; Figure 24 is a flow chart illustrating a first process in accordance with an embodiment of the present invention; A flow chart of a second process of an embodiment of the invention; FIG. 26 is a view illustrating supply and discharge of supercritical fluid; and FIG. 27 is a view illustrating a process for recycling supercritical fluid according to an embodiment of the present invention. FIG. 28 is a graph illustrating the efficiency of the separation unit; FIG. 29 is a table illustrating the efficiency of the separation unit; and FIG. 30 is a flow chart illustrating a process for discharging the supercritical fluid according to an embodiment of the present invention. .

100‧‧‧處理基板之設備 100‧‧‧ Equipment for processing substrates

1000‧‧‧索引模組 1000‧‧‧ index module

1100‧‧‧裝載埠 1100‧‧‧Loading equipment

1200‧‧‧傳送框 1200‧‧‧Transfer box

1210‧‧‧索引機器人 1210‧‧‧ indexing robot

1211‧‧‧基座 1211‧‧‧Base

1212‧‧‧本體 1212‧‧‧ Ontology

1213‧‧‧臂 1213‧‧‧ Arm

1220‧‧‧索引軌 1220‧‧‧ index track

2000‧‧‧處理模組 2000‧‧‧Processing module

2100‧‧‧緩衝腔室 2100‧‧‧ buffer chamber

2200‧‧‧傳送腔室 2200‧‧‧Transfer chamber

2210‧‧‧傳送機器人 2210‧‧‧Transfer robot

2211‧‧‧基座 2211‧‧‧Base

2212‧‧‧本體 2212‧‧‧ Ontology

2213‧‧‧臂 2213‧‧‧ Arm

2220‧‧‧傳送軌 2220‧‧‧Transport

2300‧‧‧第一處理腔室 2300‧‧‧First processing chamber

2310‧‧‧外殼 2310‧‧‧Shell

2500‧‧‧第二處理腔室 2500‧‧‧Second processing chamber

2510‧‧‧外殼 2510‧‧‧Shell

Claims (24)

一種用於處理基板之設備,該設備包含:一容器,其用於提供一超臨界流體;一排放管線,該超臨界流體係經由該排放管線而自該容器排出;及一凍結防止單元,其安置於該排放管線中以防止該超臨界流體被凍結。 An apparatus for processing a substrate, the apparatus comprising: a container for providing a supercritical fluid; a discharge line through which the supercritical flow system is discharged; and a freeze prevention unit Disposed in the discharge line to prevent the supercritical fluid from being frozen. 如申請專利範圍第1項之設備,其中該凍結防止單元包含一緩衝構件,該緩衝構件提供一緩衝空間以用於防止該超臨界流體壓力突然下降。 The apparatus of claim 1, wherein the freeze prevention unit includes a cushioning member that provides a buffer space for preventing a sudden drop in pressure of the supercritical fluid. 如申請專利範圍第2項之設備,其中該緩衝構件包含:一外殼,其提供該緩衝空間;一流入管,該超臨界流體係經由該流入管而引入至該緩衝空間中;一排出管,該超臨界流體係經由該排出管而自該緩衝空間排出;及至少一分隔壁,其安置於該外殼內以具有垂直於一長度方向之一平面以將該緩衝空間分隔為複數個空間,該超臨界流體在該複數個空間中壓力逐漸下降。 The apparatus of claim 2, wherein the cushioning member comprises: a casing that provides the buffer space; an inflow pipe through which the supercritical fluid system is introduced into the buffer space; and a discharge pipe; a supercritical flow system is discharged from the buffer space via the discharge pipe; and at least one partition wall disposed in the outer casing to have a plane perpendicular to a length direction to divide the buffer space into a plurality of spaces, the super The critical fluid gradually decreases in pressure in the plurality of spaces. 如申請專利範圍第3項之設備,其中一排放孔界定於該至少一分隔壁中,且當在該外殼之該長度方向上檢視時,界定於彼此鄰近之該等分隔壁中的該等排放孔係界定於彼此不同之位置。 The apparatus of claim 3, wherein a discharge aperture is defined in the at least one partition wall, and when viewed in the length direction of the outer casing, the emissions are defined in the partition walls adjacent to each other The pores are defined at different locations from each other. 如申請專利範圍第4項之設備,其中當在該外殼之該長度方向上檢視時,鄰近於該流入管之該分隔壁的該排放孔係界定於一與安置該流入管之位置不同的位置,且 當在該外殼之該長度方向上檢視時,鄰近於該排氣管之該分隔壁的該排放孔係界定於一與安置該排氣管之位置不同的位置。 The apparatus of claim 4, wherein the discharge hole adjacent to the partition wall of the inflow pipe is defined at a position different from a position at which the inflow pipe is disposed when viewed in the longitudinal direction of the outer casing And The discharge hole adjacent to the partition wall of the exhaust pipe is defined at a position different from a position at which the exhaust pipe is disposed when viewed in the longitudinal direction of the outer casing. 如申請專利範圍第3至5項中任一項之設備,其中該凍結防止單元進一步包含一加熱器以用於加熱該超臨界流體。 The apparatus of any one of claims 3 to 5, wherein the freeze prevention unit further comprises a heater for heating the supercritical fluid. 如申請專利範圍第6項之設備,其中該加熱器係安置於該外殼中。 The apparatus of claim 6, wherein the heater is disposed in the outer casing. 如申請專利範圍第3至5項中任一項之設備,其中該緩衝構件進一步包含一吸音構件,該吸音構件安置於該外殼內以吸收自該超臨界流體產生之一雜訊。 The apparatus of any one of claims 3 to 5, wherein the cushioning member further comprises a sound absorbing member disposed in the outer casing to absorb a noise generated from the supercritical fluid. 如申請專利範圍第8項之設備,其中該吸音構件具有一金屬絲網結構,其中斷該超臨界流體之一流動以防止該超臨界流體壓力突然下降。 The apparatus of claim 8, wherein the sound absorbing member has a wire mesh structure that interrupts flow of one of the supercritical fluids to prevent a sudden drop in pressure of the supercritical fluid. 如申請專利範圍第3至5項中任一項之設備,其中該流入管具有連接至該排放管線之一末端及沿著該外殼之該長度方向插入至該外殼中之另一末端,且供排放該超臨界流體之一流入管在垂直於該外殼之該長度方向之一方向上界定於一部分中,該流入管在該部分中插入至該外殼中。 The apparatus of any one of claims 3 to 5, wherein the inflow tube has an end connected to one end of the discharge line and inserted into the other end of the outer casing along the length direction of the outer casing, and One of the inflow tubes discharging the supercritical fluid is defined in a portion in a direction perpendicular to the length direction of the outer casing, the inflow tube being inserted into the outer casing in the portion. 如申請專利範圍第3至5項中任一項之設備,其中該緩衝構件包含一逆壓調節器,該逆壓調節器安置於該排出管中以恆定地維持該緩衝空間內之一壓力。 The apparatus of any one of claims 3 to 5, wherein the cushioning member comprises a back pressure regulator disposed in the discharge tube to constantly maintain a pressure in the buffer space. 如申請專利範圍第1或2項之設備,其中該凍結防止單元包含安置於該排放管線中之一加熱器。 The apparatus of claim 1 or 2, wherein the freeze prevention unit comprises a heater disposed in the discharge line. 如申請專利範圍第1至5項中任一項之設備,其中該容器包含一處理腔室,在該處理腔室中,使用該超臨界流體執 行一乾燥製程。 The apparatus of any one of claims 1 to 5, wherein the container comprises a processing chamber in which the supercritical fluid is used Take a dry process. 如申請專利範圍第1至5項中任一項之設備,其中該容器包含用於將該超臨界流體供應至一處理腔室中之一供水槽,在該處理腔室中,使用該超臨界流體執行一乾燥製程。 The apparatus of any one of claims 1 to 5, wherein the container comprises a supply tank for supplying the supercritical fluid to a processing chamber, wherein the supercritical is used in the processing chamber The fluid performs a drying process. 如申請專利範圍第1至5項中任一項之設備,其中該凍結防止單元提供為複數個,且該複數個凍結防止單元彼此串聯連接。 The apparatus of any one of claims 1 to 5, wherein the freeze prevention unit is provided in plural, and the plurality of freeze prevention units are connected to each other in series. 一種用於自一容器排出一超臨界流體之方法,該方法包含在連接至該容器之一排放管線中提供一緩衝空間以排出該超臨界流體,以防止該超臨界流體壓力突然下降,藉此防止該超臨界流體被凍結。 A method for discharging a supercritical fluid from a container, the method comprising providing a buffer space in a discharge line connected to the vessel to discharge the supercritical fluid to prevent a sudden drop in pressure of the supercritical fluid, thereby Prevent the supercritical fluid from freezing. 如申請專利範圍第16項之方法,其中在該排出該超臨界流體期間對該超臨界流體進行加熱。 The method of claim 16, wherein the supercritical fluid is heated during the discharge of the supercritical fluid. 如申請專利範圍第16項之方法,其中將一吸音構件提供至通過該緩衝空間之該超臨界流體,以吸收自該超臨界流體產生之一雜訊。 The method of claim 16, wherein a sound absorbing member is provided to the supercritical fluid passing through the buffer space to absorb a noise generated from the supercritical fluid. 如申請專利範圍第16至18項中任一項之方法,其中該超臨界流體係自一處理腔室排出,在該處理腔室中,使用該超臨界流體執行一乾燥製程。 The method of any one of claims 16 to 18, wherein the supercritical fluid system is discharged from a processing chamber in which a drying process is performed using the supercritical fluid. 如申請專利範圍第16至18項中任一項之方法,其中該超臨界流體係自用於將該超臨界流體供應至一處理腔室中之一供水槽排出,在該處理腔室中,使用該超臨界流體執行一乾燥製程。 The method of any one of claims 16 to 18, wherein the supercritical fluid system is used to supply the supercritical fluid to a water supply tank in a processing chamber, in which the processing chamber is used The supercritical fluid performs a drying process. 一種用於處理一基板之設備,該設備包含:一處理腔室,其中使用提供為一超臨界流體之一流體執行一乾燥製程; 一儲存槽,其儲存該流體;一供水槽,其接收來自該儲存槽之該流體以產生該超臨界流體且將該超臨界流體提供至該處理腔室中;一排放管線,其連接至該處理腔室及該供水槽中之至少一者以排出該超臨界流體;及一凍結防止單元,其安置於該排放管線中以防止該超臨界流體被凍結。 An apparatus for processing a substrate, the apparatus comprising: a processing chamber, wherein a drying process is performed using a fluid provided as a supercritical fluid; a storage tank for storing the fluid; a water supply tank receiving the fluid from the storage tank to generate the supercritical fluid and providing the supercritical fluid into the processing chamber; a discharge line connected to the Processing the chamber and at least one of the water supply tanks to discharge the supercritical fluid; and a freeze prevention unit disposed in the discharge line to prevent the supercritical fluid from being frozen. 如申請專利範圍第21項之設備,其中該凍結防止單元包含一緩衝構件,該緩衝構件提供一緩衝空間以用於防止該超臨界流體壓力突然下降。 The apparatus of claim 21, wherein the freeze prevention unit comprises a cushioning member that provides a buffer space for preventing a sudden drop in pressure of the supercritical fluid. 如申請專利範圍第22項之設備,其中該緩衝構件包含一吸音構件,該吸音構件吸收自該超臨界流體產生之一雜訊。 The apparatus of claim 22, wherein the cushioning member comprises a sound absorbing member that absorbs a noise generated from the supercritical fluid. 如申請專利範圍第21至23項中任一項之設備,其中該凍結防止單元包含一加熱器以用於加熱該超臨界流體。 The apparatus of any one of claims 21 to 23, wherein the freeze prevention unit comprises a heater for heating the supercritical fluid.
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