TW201305724A - Film formation method, computer memory medium, and film formation device - Google Patents

Film formation method, computer memory medium, and film formation device Download PDF

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TW201305724A
TW201305724A TW101113768A TW101113768A TW201305724A TW 201305724 A TW201305724 A TW 201305724A TW 101113768 A TW101113768 A TW 101113768A TW 101113768 A TW101113768 A TW 101113768A TW 201305724 A TW201305724 A TW 201305724A
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template
substrate
coupling agent
film forming
decane coupling
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TW101113768A
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Chinese (zh)
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Koukichi Hiroshiro
Shoichi Terada
Takanori Nishi
Takahiro Kitano
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Tokyo Electron Ltd
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures

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  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

The present invention is a film formation method that forms a film of a silane coupling agent on a substrate, and wherein the method has: a supply step that supplies the silane coupling agent onto the substrate; and a film formation step that applies ultrasonic vibration to the silane coupling agent supplied onto the substrate, and forms a film of the silane coupling agent on the substrate. It is possible to appropriately forma a film of the silane coupling agent on the substrate, and it is possible to increase substrate processing throughput.

Description

成膜方法,程式,電腦記憶媒體及成膜裝置 Film forming method, program, computer memory medium and film forming device

本發明是有關在基板上將矽烷耦合劑成膜的成膜方法、程式、電腦記憶媒體及成膜裝置。 The present invention relates to a film forming method, a program, a computer memory medium, and a film forming apparatus for forming a decane coupling agent on a substrate.

例如半導體裝置的製造工程是例如對半導體晶圓(以下稱為「晶圓」)進行光蝕刻微影(Photolithography)處理,在晶圓上形成預定的阻劑圖案。 For example, in the manufacturing process of a semiconductor device, for example, a semiconductor wafer (hereinafter referred to as "wafer") is subjected to photolithography to form a predetermined resist pattern on the wafer.

在形成上述的阻劑圖案時,為了謀求半導體裝置的更高集成化,被要求該阻劑圖案的微細化。一般光蝕刻微影處理之微細化的限度是在曝光處理所使用的光的波長程度。因此,使曝光處理的光短波長化在以往便進展。然而,曝光光源的短波長化在技術上及成本上有限度,只靠光的短波長化是難以形成例如數奈米單位的微細阻劑圖案。 When the above-described resist pattern is formed, in order to achieve higher integration of the semiconductor device, the resist pattern is required to be miniaturized. Generally, the limit of miniaturization of photolithography lithography is the wavelength of light used in exposure processing. Therefore, the short-wavelength of the light for the exposure process has progressed in the past. However, the short wavelength of the exposure light source is technically and cost-limited, and it is difficult to form a fine resist pattern of, for example, several nanometer units by the short wavelength of light.

於是,近年來,取代對晶圓進行光蝕刻微影處理,提案利用所謂的壓印之方法在晶圓上形成微細的阻劑圖案。此方法是使表面具有微細的圖案之模板(template)(亦被稱為模具或模型)壓在晶圓上所形成的阻劑表面,然後剝離,在該阻劑表面直接進行圖案的轉印者(專利文獻1)。 Therefore, in recent years, instead of performing photolithography lithography on a wafer, it has been proposed to form a fine resist pattern on a wafer by a so-called imprint method. The method is a method in which a template having a fine pattern on a surface (also referred to as a mold or a mold) is pressed against a surface of a resist formed on a wafer, and then peeled off, and a pattern is directly transferred on the surface of the resist. (Patent Document 1).

[先行技術文獻] [Advanced technical literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2009-43998號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-43998

在上述的壓印方法所使用的模板的表面,為了容易從阻劑剝離模板,通常形成有對阻劑具有撥液性的脫模劑膜。 In the surface of the template used in the above-described imprint method, in order to easily peel the template from the resist, a release agent film having liquid repellency to the resist is usually formed.

在模板的表面將脫模劑成膜時,首先,洗淨模板的表面之後,在該模板的表面塗佈脫模劑。其次,為了使被成膜的脫模劑具有預定的接觸角來能夠發揮對阻劑的撥液性機能,而使脫模劑密著於模板的表面。具體而言,使脫模劑與模板的表面化學反應,使脫模劑中所含的成分之中,對阻劑具有撥液性的成分,例如氟化物成分吸附於模板的表面。然後,除去脫模劑的未反應部,在模板的表面形成預定的膜厚的脫模劑膜。另外,所謂脫模劑的未反應部是意指脫模劑與模板的表面化學反應而密著的部分以外。 When the release agent is formed on the surface of the template, first, after the surface of the template is washed, a release agent is applied to the surface of the template. Next, in order to allow the film-formed release agent to have a predetermined contact angle, the liquid repellency of the resist can be exhibited, and the release agent is adhered to the surface of the template. Specifically, the release agent is chemically reacted with the surface of the template, and among the components contained in the release agent, a component having a liquid repellency to the resist, for example, a fluoride component, is adsorbed on the surface of the template. Then, the unreacted portion of the release agent is removed, and a release film having a predetermined film thickness is formed on the surface of the template. Further, the unreacted portion of the release agent means a portion other than the portion where the release agent chemically reacts with the surface of the template.

可是,若重複進行上述的壓印方法,亦即使用一模板在複數的晶圓上形成複數個阻劑圖案,則模板上的脫模膜會劣化。因此,需要定期地更換模板。於是,為了使模板的更換頻度減少,試著變更脫模劑的材質來使該脫模劑的耐久性提升。 However, if the above-described imprint method is repeated, that is, a plurality of resist patterns are formed on a plurality of wafers using a template, the release film on the template may be deteriorated. Therefore, the template needs to be replaced periodically. Therefore, in order to reduce the frequency of replacement of the template, it is tried to change the material of the release agent to improve the durability of the release agent.

然而,經發明者們的調查,得知為了使脫模劑的耐久性提升,而變更該脫模劑的材質時,若像上述那樣將脫模劑成膜,則有時使脫模劑密著於模板的表面費時。因此, 模板處理的處理能力還有改善的空間。 However, it has been found by the inventors that when the material of the release agent is changed in order to improve the durability of the release agent, if the release agent is formed as described above, the release agent may be densely formed. The surface of the template is time consuming. therefore, There is room for improvement in the processing power of the template processing.

本發明是有鑑於上述的點而研發者,其目的是在基板上將矽烷耦合劑適當地成膜,使基板處理的處理能力提升。 The present invention has been made in view of the above points, and an object thereof is to appropriately form a decane coupling agent on a substrate to improve the processing ability of the substrate processing.

為了解決上述的目的,本發明係於基板上將矽烷耦合劑成膜的成膜方法,其特徵係具有:供給工程,其係對基板上供給矽烷耦合劑;及成膜工程,其係對在上述供給工程被供給至基板上的矽烷耦合劑賦予超音波振動,在該基板上形成矽烷耦合劑的膜。 In order to solve the above object, the present invention is a film forming method for forming a decane coupling agent on a substrate, which is characterized in that: a supply engineering is performed to supply a decane coupling agent to a substrate; and a film forming process is performed in a pair The supply process is such that the decane coupling agent supplied to the substrate imparts ultrasonic vibration, and a film of a decane coupling agent is formed on the substrate.

經發明者們深入檢討的結果,得知若對基板上的矽烷耦合劑賦予超音波振動,則基板的表面與矽烷耦合劑的化學反應會被促進,該基板的表面與矽烷耦合劑的密著性會提升。具體而言,若對矽烷耦合劑賦予超音波振動,則該矽烷耦合劑會振動,藉此水分子會進入矽烷耦合劑與基板的表面之間。如此一來,藉由水分子,矽烷耦合劑分子的加水分解會被促進,且被加水分解的矽烷耦合劑分子與基板的表面的氫氧基會藉由脫水縮合而被結合。如此一來,基板的表面與矽烷耦合劑會牢固地結合,基板的表面與矽烷耦合劑的密著性會提升。因此,若對矽烷耦合劑賦予超音波振動,則可使矽烷耦合劑短時間密著於基板的表面,且可在基板上將矽烷耦合劑適當地成膜。如此可短時間使 矽烷耦合劑密著於基板的表面,因此基板處理全體的處理能力也可使提升。 As a result of in-depth review by the inventors, it was found that if ultrasonic vibration is imparted to the decane coupling agent on the substrate, the chemical reaction between the surface of the substrate and the decane coupling agent is promoted, and the surface of the substrate is adhered to the silane coupling agent. Sex will improve. Specifically, when ultrasonic vibration is imparted to the decane coupling agent, the decane coupling agent vibrates, whereby water molecules enter between the decane coupling agent and the surface of the substrate. As a result, the hydrolysis of the decane couplant molecules by the water molecules is promoted, and the hydrolyzed decane couplant molecules and the hydroxyl groups on the surface of the substrate are bonded by dehydration condensation. As a result, the surface of the substrate and the decane coupling agent are firmly bonded, and the adhesion of the surface of the substrate to the decane coupling agent is enhanced. Therefore, when ultrasonic vibration is imparted to the decane coupling agent, the decane coupling agent can be adhered to the surface of the substrate for a short period of time, and the decane coupling agent can be appropriately formed on the substrate. So that it can be made in a short time Since the decane coupling agent is adhered to the surface of the substrate, the processing ability of the entire substrate processing can be improved.

在上述成膜工程中,亦可對上述基板上的矽烷耦合劑供給使基板的表面與矽烷耦合劑的反應促進的反應促進劑,且對被供給該反應促進劑的矽烷耦合劑賦予上述超音波振動。 In the film forming process, a reaction accelerator for promoting the reaction between the surface of the substrate and the decane coupling agent may be supplied to the decane coupling agent on the substrate, and the ultrasonic wave may be supplied to the decane coupling agent to which the reaction accelerator is supplied. vibration.

在上述成膜工程中,上述反應促進劑的供給亦可在上述基板上的矽烷耦合劑乾燥之前進行。 In the film forming process described above, the supply of the reaction accelerator may be performed before the decane coupling agent on the substrate is dried.

在上述成膜工程中,亦可與上述基板上的矽烷耦合劑對向配置支持板,使上述反應促進劑擴散於上述矽烷耦合劑與上述支持板之間。 In the film forming process, a support plate may be disposed opposite to the decane coupling agent on the substrate, and the reaction accelerator may be diffused between the decane coupling agent and the support plate.

在上述成膜工程中,亦可使基板移動,而令上述反應促進劑擴散於上述基板上的矽烷耦合劑上。 In the film forming process described above, the substrate may be moved to diffuse the reaction accelerator onto the decane coupling agent on the substrate.

在上述成膜工程中,對上述基板上的矽烷耦合劑供給上述反應促進劑時,亦可供給該反應促進劑與上述矽烷耦合劑的溶劑的混合液。 In the film forming process described above, when the reaction accelerator is supplied to the decane coupling agent on the substrate, a mixed solution of the reaction accelerator and the solvent of the decane coupling agent may be supplied.

上述反應促進劑亦可為乙醇。 The above reaction accelerator may also be ethanol.

在上述成膜工程中,亦可在與基板表面垂直的方向賦予上述超音波振動。 In the above film forming process, the ultrasonic vibration may be imparted in a direction perpendicular to the surface of the substrate.

在上述成膜工程中,亦可使賦予上述超音波振動的超音波振動子或上述基板相對地移動。 In the film forming process described above, the ultrasonic vibrator or the substrate to which the ultrasonic vibration is applied may be relatively moved.

在上述供給工程中,亦可對基板上供給液體狀或氣體狀的矽烷耦合劑。 In the above supply process, a liquid or gaseous decane coupling agent may be supplied to the substrate.

上述基板係於表面形成有預定的圖案之模板,上述矽 烷耦合劑亦可為脫模劑。 The substrate is a template in which a predetermined pattern is formed on the surface, and the crucible is The alkane coupling agent can also be a release agent.

若根據別的觀點的本發明,則可提供一種為了藉由成膜裝置來使上述成膜方法實行,而在控制該成膜裝置的控制部的電腦上動作之程式。 According to another aspect of the invention, it is possible to provide a program for operating on a computer that controls a control unit of the film forming apparatus in order to implement the film forming method by a film forming apparatus.

又,若根據別的觀點的本發明,則可提供一種儲存上述程式之可讀取的電腦記憶媒體。 Further, according to the present invention, according to another aspect, a readable computer memory medium storing the above program can be provided.

又,若根據別的觀點的本發明,則可提供一種在基板上將矽烷耦合劑成膜的成膜裝置,其特徵係具有: Further, according to the present invention, according to another aspect of the invention, there is provided a film forming apparatus which forms a decane coupling agent on a substrate, and has the following features:

矽烷耦合劑供給部,其係對基板上供給矽烷耦合劑;及 超音波振動子,其係對從上述矽烷耦合劑供給部供給至基板上的矽烷耦合劑賦予超音波振動。 a decane coupling agent supply unit for supplying a decane coupling agent to the substrate; The ultrasonic vibrator imparts ultrasonic vibration to the decane coupling agent supplied from the decane coupling agent supply unit to the substrate.

上述成膜裝置亦可具有反應促進劑供給部,其係對從上述矽烷耦合劑供給部供給至基板上的矽烷耦合劑供給使基板的表面與矽烷耦合劑的反應促進的反應促進劑。 The film forming apparatus may further include a reaction accelerator supply unit that supplies a reaction accelerator that promotes the reaction between the surface of the substrate and the decane coupling agent to the decane coupling agent supplied from the decane coupling agent supply unit to the substrate.

上述成膜裝置亦可具有支持板,其係與上述基板上的矽烷耦合劑對向而配置,在與該矽烷耦合劑之間使上述反應促進劑擴散。 The film forming apparatus may further include a support plate disposed to face the decane coupling agent on the substrate, and diffusing the reaction accelerator between the decane coupling agent and the silane coupling agent.

上述反應促進劑供給部亦可供給上述反應促進劑與上述矽烷耦合劑的溶劑的混合液。 The reaction accelerator supply unit may also supply a mixed solution of the reaction accelerator and the solvent of the decane coupling agent.

上述反應促進劑亦可為乙醇。 The above reaction accelerator may also be ethanol.

上述超音波振動子亦可在與基板表面垂直的方向賦予上述超音波振動。 The ultrasonic vibrator may also impart the ultrasonic vibration in a direction perpendicular to the surface of the substrate.

上述成膜裝置亦可具有使上述基板移動的基板移動機 構。 The film forming apparatus may further have a substrate moving machine that moves the substrate Structure.

上述成膜裝置亦可具有使上述超音波振動子移動的振動子移動機構。 The film forming apparatus may have a vibrator moving mechanism that moves the ultrasonic vibrator.

上述矽烷耦合劑供給部係可對基板上供給液體狀或氣體狀的矽烷耦合劑。 The decane coupling agent supply unit can supply a liquid or gaseous decane coupling agent to the substrate.

上述基板係於表面形成有預定的圖案之模板,上述矽烷耦合劑亦可為脫模劑。 The substrate is a template in which a predetermined pattern is formed on the surface, and the decane coupling agent may be a release agent.

若根據本發明,則可在基板上將矽烷耦合劑適當地成膜,使基板處理的處理能力提升。 According to the present invention, the decane coupling agent can be appropriately formed on the substrate to improve the processing ability of the substrate processing.

以下,說明有關本發明的實施形態。圖1是表示本實施形態之具備作為成膜裝置的塗佈單元之模板處理裝置1的構成的概略的平面圖。圖2及圖3是表示模板處理裝置1的構成的概略的側面圖。 Hereinafter, embodiments of the present invention will be described. FIG. 1 is a plan view showing a schematic configuration of a template processing apparatus 1 including a coating unit as a film forming apparatus according to the embodiment. 2 and 3 are schematic side views showing the configuration of the template processing apparatus 1.

在本實施形態的模板處理裝置1是使用如圖4所示具有長方體形狀,在表面形成有預定的轉印圖案C,作為基板的模板T。以下,將形成有轉印圖案C的模板T的面稱為表面T1,將與該表面T1相反側的面稱為背面T2。另外,模板T是使用可透過可視光、近紫外光、紫外線等的光之透明材料,例如石英玻璃。 In the template processing apparatus 1 of the present embodiment, a template T having a rectangular parallelepiped shape as shown in FIG. 4 and having a predetermined transfer pattern C formed on the surface as a substrate is used. Hereinafter, the surface of the template T on which the transfer pattern C is formed is referred to as a surface T 1 , and the surface on the opposite side to the surface T 1 is referred to as a back surface T 2 . Further, the template T is a transparent material that uses light that transmits visible light, near-ultraviolet light, ultraviolet light, or the like, such as quartz glass.

模板處理裝置1是如圖1所示具有一體連接模板搬出 入站2及模板處理站3的構成,該模板搬出入站2係以卡匣單位在外部與模板處理裝置1之間搬出入複數片例如5片的模板T,或對模板卡匣CT搬出入模板T,該模板處理站3是具備對模板T實施預定的處理的複數個處理單元。 The template processing apparatus 1 has a configuration in which the template loading/unloading station 2 and the template processing station 3 are integrally connected as shown in FIG. 1, and the template loading/unloading station 2 carries out a plurality of sheets between the outside and the template processing apparatus 1 in a cassette unit. e.g. T. 5 sheet template, the template or unloading the cassette C T T template, the template processing station 3 is provided with the template T of a predetermined plurality of processing unit.

在模板搬出入站2設有卡匣載置台10。卡匣載置台10是使複數的模板卡匣CT在X方向(圖1中的上下方向)載置成一列。亦即,模板搬出入站2是構成可保有複數的模板T。 A cassette mounting table 10 is provided in the template loading/unloading station 2. The cassette mounting table 10 is such that a plurality of template cassettes C T are placed in a row in the X direction (vertical direction in FIG. 1). That is, the template carry-in/out station 2 constitutes a template T that can hold a complex number.

在模板搬出入站2設有可在延伸於X方向的搬送路11上移動的模板搬送體12。模板搬送體12是在水平方向伸縮自如,亦可在垂直方向及繞著垂直軸(θ方向)移動自如,可在模板卡匣CT與模板處理站3之間搬送模板T。 The template loading/unloading station 2 is provided with a template conveying body 12 that can move on the conveying path 11 extending in the X direction. The template transport body 12 is expandable and contractible in the horizontal direction, and can be moved in the vertical direction and around the vertical axis (θ direction), and the template T can be transported between the template cassette C T and the template processing station 3.

在模板處理站3的中心部設有搬送單元20。在此搬送單元20的周邊,各種處理單元會被配置成多段,例如配置有4個的處理區塊G1~G4。在模板處理站3的正面側(圖1的X方向負方向側),從模板搬出入站2側依序配置第1處理區塊G1、第2處理區塊G2。在模板處理站3的背面側(圖1的X方向正方向側),從模板搬出入站2側依序配置第3處理區塊G3、第4處理區塊G4。在模板處理站3的模板搬出入站2側配置有用以進行模板T的交接之轉移單元21。 A transport unit 20 is provided at a central portion of the template processing station 3. Around the transport unit 20, various processing units are arranged in a plurality of stages, for example, four processing blocks G1 to G4 are arranged. On the front side of the template processing station 3 (on the negative side in the X direction of FIG. 1), the first processing block G1 and the second processing block G2 are sequentially arranged from the template loading/unloading station 2 side. On the back side of the template processing station 3 (the positive side in the X direction of FIG. 1), the third processing block G3 and the fourth processing block G4 are sequentially arranged from the template loading/unloading station 2 side. A transfer unit 21 for transferring the template T is disposed on the template carry-in/out station 2 side of the template processing station 3.

搬送單元20是具有保持模板T而搬送且在水平方向、垂直方向及繞著垂直軸移動自如的搬送臂。而且,搬送 單元20可對配置於處理區塊G1~G4內之後述的各種處理單元及轉移單元21搬送模板T。 The transport unit 20 is a transport arm that is transported while holding the template T and is movable in the horizontal direction, the vertical direction, and the vertical axis. And, transport The unit 20 can transport the template T to the various processing units and the transfer unit 21 which will be described later in the processing blocks G1 to G4.

如圖2所示,在第1處理區塊G1由下依序重疊有複數的液處理單元,例如在模板T的表面T1塗佈作為矽烷耦合劑的液體狀的脫模劑及反應促進劑之作為成膜裝置的塗佈單元30、及清洗模板T上的脫模劑之清洗單元31的2段。第2處理區塊G2也同樣由下依序重疊塗佈單元32及清洗單元33的2段。並且,在第1處理區塊G1及第2處理區塊G2的最下段分別設有用以對上述液處理單元供給各種處理液的化學室34、35。 As shown, in the first processing block G1 are sequentially superimposed by the plurality of liquid processing units, for example a surface coated template T 1 T as liquid Silane coupling agent and reaction accelerator releasing agent 2 The coating unit 30 of the film forming apparatus and the cleaning unit 31 of the release agent for cleaning the template T are in two stages. Similarly to the second processing block G2, the coating unit 32 and the cleaning unit 33 are sequentially stacked in the next step. Further, in the lowermost stages of the first processing block G1 and the second processing block G2, chemical chambers 34 and 35 for supplying various processing liquids to the liquid processing unit are provided.

如圖3所示,在第3處理區塊G3由下依序重疊有2段對模板T照射紫外線,將在模板T上形成脫模膜之前的表面T1洗淨的洗淨單元40、41。並且,在第4處理區塊G4也與第3處理區塊G3同樣,由下依序重疊有2段洗淨單元42、43。 3, in the third processing block G3 are sequentially superimposed by the template T 2 period irradiated with ultraviolet light, a mold release film before washing the surface of T cleaning units 40, 41 formed on the template T . Further, in the fourth processing block G4, similarly to the third processing block G3, the two cleaning units 42 and 43 are superimposed in this order.

其次,說明有關上述塗佈單元30、32的構成。塗佈單元30是如圖5所示具有在側面形成有模板T的搬出入口(未圖示)的處理容器100。 Next, the configuration of the above coating units 30 and 32 will be described. The coating unit 30 is a processing container 100 having a carry-out port (not shown) in which a template T is formed on the side surface as shown in FIG. 5 .

在處理容器100內的底面設有載置模板T的載置台101。模板T是以其表面T1朝上方的方式載置於載置台101的上面。在載置台101的下方設有內藏驅動部之作為基板移動機構的模板移動機構102。載置台101及被載置於該載置台101的模板T是藉由此模板移動機構102在水平方向移動自如。 A mounting table 101 on which the template T is placed is provided on the bottom surface of the processing container 100. The template T is placed on the upper surface of the mounting table 101 such that its surface T 1 faces upward. A template moving mechanism 102 as a substrate moving mechanism of the built-in driving unit is provided below the mounting table 101. The mounting table 101 and the template T placed on the mounting table 101 are movable in the horizontal direction by the template moving mechanism 102.

在載置台101的上面,在該載置台101所載置的模板T的下方,設有在與模板T的表面T1垂直的方向亦即垂直方向賦予超音波振動的超音波振動子110。在超音波振動子110設有用以從該超音波振動子110使超音波振盪的超音波振盪裝置(未圖示)。在超音波振動子110的下方設有內藏驅動部的振動子移動機構111。超音波振動子110是藉由此振動子移動機構111在水平方向移動自如。另外,超音波振動子110是與載置台101獨立移動自如。 In the above stage 101, below the mounting table 101 contained in the template counter T is provided in the ultrasonic transducer 110 and the surface of the template T is T 1 i.e. the direction perpendicular to the vertical direction to impart ultrasonic vibration. The ultrasonic vibrator 110 is provided with an ultrasonic oscillating device (not shown) for oscillating the ultrasonic waves from the ultrasonic vibrator 110. Below the ultrasonic vibrator 110, a vibrator moving mechanism 111 having a built-in driving unit is provided. The ultrasonic vibrator 110 is movable in the horizontal direction by the vibrator moving mechanism 111. Further, the ultrasonic vibrator 110 is independently movable from the mounting table 101.

在載置台101的內部設有用以由下方支撐模板T使昇降的昇降銷112。昇降銷112可藉由昇降驅動部113來上下動。在超音波振動子110中形成有在厚度方向貫通該超音波振動子110的貫通孔114,昇降銷112是形成插通貫通孔114。 A lift pin 112 for lifting and lowering the template T from below is provided inside the mounting table 101. The lift pin 112 can be moved up and down by the lift drive unit 113. The ultrasonic vibrator 110 is formed with a through hole 114 that penetrates the ultrasonic vibrator 110 in the thickness direction, and the lift pin 112 forms the insertion through hole 114.

如圖6所示,在載置台101的X方向負方向(圖6的下方向)側設有沿著Y方向(圖6的左右方向)延伸的軌道120。軌道120是例如從載置台101的Y方向負方向(圖6的左方向)側的外方形成至Y方向正方向(圖6的右方向)側的外方。在軌道120安裝有臂121、122。 As shown in FIG. 6, a rail 120 extending in the Y direction (the horizontal direction of FIG. 6) is provided on the side of the mounting table 101 in the negative X direction (the downward direction in FIG. 6). The rail 120 is formed, for example, from the outside in the negative direction of the Y direction of the mounting table 101 (the left direction in FIG. 6) to the outside in the positive direction of the Y direction (the right direction in FIG. 6). Arms 121, 122 are mounted on the track 120.

在第1臂121設有作為對模板T上供給脫模劑的矽烷耦合劑供給部之脫模劑噴嘴123。脫模劑噴嘴123是例如與模板T的一邊尺寸相同或更長,具有沿著X方向的細長形狀。而且,脫模劑噴嘴123的吐出口是形成縫隙狀。並且,如圖5所示,在脫模劑噴嘴123連接有連通至脫模劑供給源124的供給管125。另外,脫模劑的材料是使用對 後述的晶圓上的阻劑膜具有撥液性的材料,例如氟碳系化合物等。 The first arm 121 is provided with a release agent nozzle 123 as a decane coupling agent supply unit that supplies a release agent to the template T. The release agent nozzle 123 is, for example, the same or longer than the one side of the template T, and has an elongated shape along the X direction. Further, the discharge port of the release agent nozzle 123 is formed in a slit shape. Further, as shown in FIG. 5, a supply pipe 125 that communicates with the release agent supply source 124 is connected to the release agent nozzle 123. In addition, the material of the release agent is used The resist film on the wafer to be described later has a liquid repellency material such as a fluorocarbon compound.

如圖6所示,第1臂121是藉由噴嘴驅動部126在軌道120上移動自如。藉此,脫模劑噴嘴123可從載置台101的Y方向正方向側的外方所設置的待機部127移動至載置台101上的模板T的上方,且可在該模板T的表面T1上移動於模板T的邊方向。並且,第1臂121是藉由噴嘴驅動部126來昇降自如,可調整脫模劑噴嘴123的高度。 As shown in FIG. 6, the first arm 121 is movable on the rail 120 by the nozzle driving unit 126. Thereby, the release agent nozzle 123 can be moved from the standby unit 127 provided on the outer side in the positive direction of the Y direction of the mounting table 101 to the upper side of the template T on the mounting table 101, and can be on the surface T1 of the template T. Moves in the side direction of the template T. Further, the first arm 121 is lifted and lowered by the nozzle driving unit 126, and the height of the release agent nozzle 123 can be adjusted.

在第2臂122是設有對模板T上(模板T上的脫模劑上)供給作為反應促進劑的乙醇(例如t-pentyl alcohol)之作為反應促進劑供給部的乙醇噴嘴130。乙醇噴嘴130是例如與模板T的一邊尺寸相同或更長,具有沿著X方向的細長形狀。而且,乙醇噴嘴130的吐出口是形成縫隙狀。並且,如圖5所示,在乙醇噴嘴130連接有連通至乙醇供給源131的供給管132。另外,反應促進劑的乙醇是可促進模板T的表面T1與脫模劑S的化學反應。 In the second arm 122, an ethanol nozzle 130 as a reaction accelerator supply unit that supplies ethanol (for example, t-pentyl alcohol) as a reaction accelerator to the template T (on the release agent on the template T) is provided. The ethanol nozzle 130 is, for example, the same size as or longer than the one side of the template T, and has an elongated shape along the X direction. Further, the discharge port of the ethanol nozzle 130 is formed in a slit shape. Further, as shown in FIG. 5, a supply pipe 132 that is connected to the ethanol supply source 131 is connected to the ethanol nozzle 130. Further, the ethanol of the reaction accelerator is a chemical reaction which promotes the surface T 1 of the template T and the releasing agent S.

如圖6所示,第2臂122是藉由噴嘴驅動部133在軌道120上移動自如。藉此,乙醇噴嘴130可從載置台101的Y方向正方向側的外方所設置的待機部134移動至載置台101上的模板T的上方,且可在該模板T的表面T1上移動於模板T的邊方向。並且,第2臂122是藉由噴嘴驅動部133來昇降自如,可調整乙醇噴嘴130的高度。 As shown in FIG. 6, the second arm 122 is movable on the rail 120 by the nozzle driving unit 133. Accordingly, the standby section 134 moves outward 130 may be the positive direction of the Y-direction stage 101 side ethanol nozzle provided to the carrier above the template T on the mounting table 101, and may be T at the surface of the template T on the mobile In the side direction of the template T. Further, the second arm 122 is lifted and lowered by the nozzle driving unit 133, and the height of the ethanol nozzle 130 can be adjusted.

另外,塗佈單元32的構成是與上述塗佈單元30的構 成同樣,因此省略說明。 In addition, the configuration of the coating unit 32 is the same as that of the coating unit 30 described above. The same is true, so the description is omitted.

其次,說明有關上述清洗單元31、33的構成。清洗單元31是如圖7所示具有在側面形成有模板T的搬出入口(未圖示)的處理容器140。 Next, the configuration of the above-described cleaning units 31 and 33 will be described. The cleaning unit 31 is a processing container 140 having a carry-out port (not shown) in which a template T is formed on the side surface as shown in Fig. 7 .

在處理容器140內的底面設有使模板T浸漬的浸漬槽141。在浸漬槽141內積存有用以清洗模板T上的脫模劑的清洗液,例如有機溶劑。 A dipping groove 141 for immersing the template T is provided on the bottom surface of the processing container 140. A cleaning liquid for cleaning the release agent on the template T, for example, an organic solvent, is stored in the dipping tank 141.

在處理容器140內的頂面,浸漬槽141的上方是設有保持模板T的保持部142。保持部142是具有吸附保持模板T的背面T2的外周部之吸盤143。模板T是以其表面T1朝上方的方式保持於吸盤143。吸盤143可藉由昇降機構144來昇降。而且,模板T是在被保持於保持部142的狀態下浸漬於浸漬槽141所積存的有機溶劑,該模板T上的脫模劑會被清洗。 On the top surface of the processing container 140, above the immersion tank 141 is a holding portion 142 provided with a holding template T. The holding portion 142 is a suction cup 143 having an outer peripheral portion that adsorbs and holds the back surface T 2 of the template T. The template T is held by the suction cup 143 with its surface T 1 facing upward. The suction cup 143 can be raised and lowered by the lifting mechanism 144. Further, the template T is an organic solvent that is immersed in the immersion tank 141 while being held by the holding portion 142, and the release agent on the template T is cleaned.

保持部142是具有設在吸盤143所保持的模板T的上方之氣體供給部145。氣體供給部145是例如可將氮等的不活性氣體或乾燥空氣等的氣體吹至下方,亦即吸盤143所保持的模板T的表面T1。藉此,可在浸漬槽141清洗的模板T的表面T1乾燥。另外,在清洗單元31連接有將內部的環境排氣的排氣管(未圖示)。 The holding portion 142 is a gas supply portion 145 having a plate T provided above the suction cup 143. For example, the gas supply unit 145 can blow an inert gas such as nitrogen or a gas such as dry air to the lower surface, that is, the surface T 1 of the template T held by the suction cup 143. Thereby, the surface T 1 of the template T which can be washed in the dipping tank 141 can be dried. Further, an exhaust pipe (not shown) that exhausts the internal environment is connected to the cleaning unit 31.

另外,清洗單元33的構成是與上述清洗單元31的構成同樣,因此省略說明。 The configuration of the cleaning unit 33 is the same as the configuration of the cleaning unit 31 described above, and thus the description thereof will be omitted.

其次,說明有關上述洗淨單元40~43的構成。洗淨單元40是如圖8所示具有在側面形成有模板T的搬出入 口(未圖示)的處理容器150。 Next, the configuration of the above-described cleaning units 40 to 43 will be described. The cleaning unit 40 has a loading and unloading form in which a template T is formed on the side as shown in FIG. A processing container 150 (not shown).

在處理容器150內設有吸附保持模板T的吸盤151。吸盤151是以模板T的表面T1朝上方的方式吸附保持其背面T2。在吸盤151的下方設有吸盤驅動部152。此吸盤驅動部152是被安裝在設於處理容器150內的底面沿著Y方向延伸的軌道153上。吸盤151可藉由此吸盤驅動部152來沿著軌道153移動。 A suction cup 151 that adsorbs and holds the template T is provided in the processing container 150. The chuck 151 adsorbs and holds the back surface T 2 such that the surface T 1 of the template T faces upward. A suction cup driving portion 152 is provided below the suction cup 151. This chuck drive unit 152 is attached to a rail 153 that extends in the Y direction on the bottom surface provided in the processing container 150. The suction cup 151 can be moved along the rail 153 by the suction cup driving portion 152.

在處理容器150內的頂面,軌道153的上方是設有對吸盤151所保持的模板T照射紫外線的紫外線照射部154。紫外線照射部154是如圖9所示般延伸於X方向。而且,在模板T沿著軌道153來移動中,從紫外線照射部154照射紫外線至該模板T的表面T1,藉此紫外線會被照射於模板T的表面T1全面。 On the top surface of the processing container 150, above the rail 153, an ultraviolet ray irradiation portion 154 that irradiates the template T held by the suction cup 151 with ultraviolet rays is provided. The ultraviolet ray irradiation unit 154 extends in the X direction as shown in Fig. 9 . Further, the template T to move along the rail 153, 154 from the UV irradiation portion irradiating ultraviolet rays to the surface of the template T is T 1, whereby the ultraviolet rays are irradiated to the surface of the template T T. 1 overall.

另外,洗淨單元41~43的構成是與上述洗淨單元40的構成同樣,因此省略說明。 The configuration of the cleaning units 41 to 43 is the same as the configuration of the cleaning unit 40, and thus the description thereof is omitted.

在以上的模板處理裝置1中,如圖1所示設有控制部160。控制部160是例如電腦,具有程式儲存部(未圖示)。在程式儲存部中儲存有程式,該程式是控制模板搬出入站2與模板處理站3之間的模板T的搬送、或模板處理站3的驅動系的動作等,而來實行模板處理裝置1之後述的模板處理。另外,此程式例如亦可記錄於電腦可讀取的硬碟(HD)、軟碟(FD)、光碟(CD)、光磁碟(MO)、記憶卡等電腦可讀取的記憶媒體者,由該記憶媒體來安裝於控制部160者。 In the above-described template processing apparatus 1, as shown in FIG. 1, a control unit 160 is provided. The control unit 160 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a template processing device 1 for controlling the transfer of the template T between the inbound/incoming station 2 and the template processing station 3, or the operation of the drive system of the template processing station 3, and the like. Template processing described later. In addition, the program can also be recorded on a computer-readable hard disk (HD), floppy disk (FD), compact disc (CD), optical disk (MO), memory card and other computer readable memory media. It is attached to the control unit 160 by the memory medium.

本實施形態的模板處理裝置1是如以上般構成。其次,說明有關在該模板處理裝置1進行的模板處理。圖10是表示此模板處理的主要處理流程,圖11是表示各工程的模板T的狀態。 The template processing apparatus 1 of the present embodiment is configured as described above. Next, the template processing performed in the template processing apparatus 1 will be described. FIG. 10 is a main processing flow showing the template processing, and FIG. 11 is a diagram showing the state of the template T of each project.

首先,藉由模板搬送體12,從卡匣載置台10上的模板卡匣CT取得模板T,搬送至模板處理站3的轉移單元21(圖10的工程A1)。此時,在模板卡匣CT內,模板T是被收容成形成有轉印圖案C的表面T1會朝上方,在此狀態下,模板T被搬送至轉移單元21。 First, the template T is taken from the template cassette C T on the cassette mounting table 10 by the template transport body 12, and transported to the transfer unit 21 of the template processing station 3 (the project A1 of FIG. 10). At this time, in the template cassette C T , the template T is placed so that the surface T 1 on which the transfer pattern C is formed is directed upward, and in this state, the template T is transported to the transfer unit 21 .

然後,藉由搬送單元20來搬送模板T至洗淨單元40,被吸附保持於吸盤151。接著,一邊藉由吸盤驅動部152來使模板T沿著軌道153移動,一邊從紫外線照射部154照射紫外線至該模板T。如此一來,像圖11(a)所示那樣,紫外線會被照射於模板T的表面T1全面,模板T的表面T1的有機汚染物或微粒等的雜質會被除去,該表面T1會被洗淨(圖10的工程A2)。 Then, the template T is transported to the cleaning unit 40 by the transport unit 20, and is sucked and held by the suction cup 151. Then, while the template T is moved along the rail 153 by the suction cup driving unit 152, ultraviolet rays are irradiated from the ultraviolet irradiation unit 154 to the template T. Thus, like in FIG. 11 (a) as shown in ultraviolet rays is irradiated to the surface of the template T is T 1 round, surface impurities and the like template T T 1 organic pollutants or particles will be removed, the surface of the T 1 Will be washed (Project A2 of Figure 10).

然後,藉由搬送單元20來搬送模板T至塗佈單元30。被搬送至塗佈單元30的模板T會被交接至昇降銷112,載置於載置台101。然後,一邊使脫模劑噴嘴123移動於模板T的邊方向,一邊從該脫模劑噴嘴123供給脫模劑S至模板T上。然後,如圖11(b)所示在模板T的表面T1全面塗佈脫模劑S(圖10的工程A3)。 Then, the template T is transferred to the coating unit 30 by the transport unit 20. The template T conveyed to the coating unit 30 is transferred to the lift pins 112 and placed on the mounting table 101. Then, while releasing the release agent nozzle 123 in the side direction of the template T, the release agent S is supplied from the release agent nozzle 123 to the template T. Then, as shown in Fig. 11 (b), the release agent S is entirely applied to the surface T 1 of the template T (work A3 of Fig. 10).

然後,停止來自脫模劑噴嘴123之脫模劑S的供給,使該脫模劑噴嘴123移動至待機部127。接著,在模板T 上的脫模劑S乾燥之前,一邊使乙醇噴嘴130移動至模板T的邊方向,一邊從該乙醇噴嘴130供給t-pentyl alcohol A(以下有時簡稱「乙醇A」)至模板T的脫模劑S上。然後,如圖11(c)所示,在模板T的脫模劑S上的全面塗佈乙醇A(圖10的工程A4)。 Then, the supply of the release agent S from the release agent nozzle 123 is stopped, and the release agent nozzle 123 is moved to the standby unit 127. Next, in the template T Before the release agent S is dried, the ethanol nozzle 130 is moved to the side direction of the template T, and t-pentyl alcohol A (hereinafter sometimes referred to as "ethanol A") is supplied from the ethanol nozzle 130 to the release of the template T. Agent S. Then, as shown in FIG. 11(c), ethanol A is entirely applied to the release agent S of the template T (work A4 of FIG. 10).

然後,如圖11(d)所示,從超音波振動子110對模板T上的脫模劑S賦予超音波振動(圖10的工程A5)。如此一來,模板T的表面T1與脫模劑S的化學反應會被促進,該模板T的表面T1與脫模劑S的密著性會提升。 Then, as shown in FIG. 11(d), ultrasonic vibration is applied from the ultrasonic vibrator 110 to the release agent S on the template T (work A5 of FIG. 10). Thus, the surface of the template T is T 1 and the chemical reaction will be to promote the release agent S, the template T T adhesion surface 1 S of the release agent will increase.

另外,當從超音波振動子110所被賦予超音波振動的振動強度在模板面內不均一時,亦可至少藉由模板移動機構102或振動子移動機構111來使模板T或超音波振動子110相對地移動。該情況,可使超音波振動的振動強度在模板面內形成均一,可使模板T的表面T1與脫模劑S的化學反應無不均勻地促進。 Further, when the vibration intensity imparted to the ultrasonic vibration from the ultrasonic vibrator 110 is not uniform in the template plane, the template T or the ultrasonic vibrator may be caused by at least the template moving mechanism 102 or the vibrator moving mechanism 111. 110 moves relatively. In this case, ultrasonic vibration can form a uniform intensity of vibration in the mold surface, the surface can template T T S chemical reaction of a release agent without promoting unevenly.

在此,根據圖12來詳細說明有關對上述模板T上的脫模劑S賦予超音波振動時的作用及效果。圖12(a)是表示賦予超音波振動之前的模板T的表面T1的狀態,圖12(b)~(d)是表示賦予超音波振動中的模板T的表面T1的狀態。 Here, the action and effect when ultrasonic vibration is applied to the release agent S on the template T will be described in detail with reference to FIG. Fig. 12 (a) shows a state of the surface T 1 of the template T before the ultrasonic vibration is applied, and Figs. 12 (b) to (d) show a state of the surface T 1 of the template T in the ultrasonic vibration.

如圖12所示,在模板T的表面T1形成有氫氧基(OH基)。並且,矽烷耦合劑之脫模劑S的脫模劑分子是具有2個的官能基。亦即,一官能基的OR基是與模板T的表面T1結合。並且,相鄰的脫模劑分子的OR基彼此間也結 合。另外,R是烷基,例如CH3。另一方面,其他的官能基SG(圖12中的斜線部分)是發揮脫模機能的官能基,具有氟化物成分。 As shown in FIG. 12, a hydroxyl group (OH group) is formed on the surface T 1 of the template T. Further, the release agent molecule of the release agent S of the decane coupling agent has two functional groups. That is, the monofunctional OR group is bonded to the surface T 1 of the template T. Further, the OR groups of adjacent release agent molecules are also bonded to each other. Further, R is an alkyl group such as CH 3 . On the other hand, the other functional group S G (hatched portion in Fig. 12) is a functional group which exhibits a mold release function and has a fluoride component.

而且,如圖12(a)所示,即使在模板T的表面T1上供給脫模劑S及乙醇A,還是會因為在脫模劑S的官能基SG中原子被緊密地配置,所以乙醇A進入脫模劑S與模板T的表面T1之間費時。 Further, as shown in Fig. 12 (a), even if the releasing agent S and the ethanol A are supplied on the surface T 1 of the template T, the atoms are closely arranged in the functional group S G of the releasing agent S, so that the atoms are closely arranged in the functional group S G of the releasing agent S. It takes time for the ethanol A to enter the release agent S and the surface T 1 of the template T.

於是,由超音波振動子110來對模板T上的脫模劑S賦予超音波振動。此超音波振動疏密波,在與模板T的表面T1垂直的方向,亦即脫模劑S的厚度方向行進。如此一來,藉由此超音波振動,如圖12(b)~(d)所示,脫模劑S的官能基SG會在垂直方向振動。然後,如圖12(b)所示,一旦官能基SG萎縮,則乙醇A會移動至下方。其次,如圖12(c)所示,一旦官能基SG伸長,則官能基SG的原子會變疏,因此乙醇A會浸透至該官能基SG。然後,如圖12(d)所示,一旦官能基SG再萎縮,則乙醇A會再移動至下方,該乙醇A的一部分會進入脫模劑S與模板T的表面T1之間。若如此對模板T上的脫模劑S賦予超音波振動,則容易使乙醇A移動。 Then, the ultrasonic vibration is applied to the release agent S on the template T by the ultrasonic vibrator 110. This ultrasonic vibration-dense wave travels in a direction perpendicular to the surface T 1 of the template T, that is, in the thickness direction of the releasing agent S. As a result, as a result of the ultrasonic vibration, as shown in FIGS. 12(b) to (d), the functional group S G of the releasing agent S vibrates in the vertical direction. Then, as shown in FIG. 12(b), once the functional group S G is atrophied, the ethanol A moves to the lower side. Next, as shown in Fig. 12(c), once the functional group S G is elongated, the atom of the functional group S G is deteriorated, so that ethanol A is impregnated into the functional group S G . Then, as shown in FIG. 12(d), once the functional group S G is further atrophied, the ethanol A moves to the lower side, and a part of the ethanol A enters between the release agent S and the surface T 1 of the template T. When the ultrasonic vibration is applied to the release agent S on the template T as described above, the ethanol A is easily moved.

一旦乙醇A進入脫模劑S與模板T的表面T1之間,則脫模劑S的脫模劑分子會被加水分解。然後,如圖13所示,模板T的表面T1與脫模劑分子會藉由脫水縮合而被結合。並且,鄰接的脫模劑分子彼此間會藉由脫水縮合而結合。如此一來,如圖14所示,模板T的表面T1與脫 模劑S的化學反應會被促進,該模板T的表面T1與脫模劑S的密著性會提升。 Once the ethanol A enters between the release agent S and the surface T 1 of the template T, the release agent molecules of the release agent S are hydrolyzed. Then, as shown in FIG. 1 template T T surface release agent molecules are bound by dehydrating condensation of 13. Further, adjacent mold release molecules are bonded to each other by dehydration condensation. Thus, as shown, the surface of the template T 1 T chemistry S release agent 14 will be promoted, the surface of the template T is T 1 and the adhesion of the release agent S will increase.

另外,在塗佈單元30中,如此使模板T的表面T1與脫模劑S密著後,亦可對模板T上的脫模劑S例如吹上氮等的不活性氣體或乾燥空氣等的氣體,使該脫模劑S乾燥。 Further, in the coating unit 30, after the surface T 1 of the template T and the release agent S are adhered to each other, the release agent S on the template T may be, for example, blown with an inert gas such as nitrogen or dry air. The gas is used to dry the release agent S.

然後,藉由搬送單元20來搬送模板T至清洗單元31,保持於保持部142。接著,使保持部142下降,使模板T浸漬於浸漬槽141所積存的有機溶劑。一旦經過預定時間,則僅脫模劑S的未反應部,亦即脫模劑S會與模板T的表面T1化學反應,僅與該表面T1密著的部分以外剝離。此時,在上述的工程A5中,因為脫模劑S密著於模板T的表面T1,所以不會有預定距離的脫模劑S從模板T的表面T1剝離的情形。如此一來,像圖11(e)所示那樣,在模板T上沿著轉印圖案C的脫模膜SF會以預定的膜厚成膜(圖10的工程A6)。然後,使保持部142上昇,從氣體供給部145對模板T吹上氣體,使其表面T1乾燥。 Then, the template T is transported to the cleaning unit 31 by the transport unit 20 and held by the holding unit 142. Next, the holding portion 142 is lowered, and the template T is immersed in the organic solvent accumulated in the dipping tank 141. Once the predetermined time has elapsed, only the S portion of the unreacted release agent, i.e. a release agent S on the surface of the template T T chemistry. 1, only the peel adhesion than the portion of the surface T 1. At this time, in the above-described work A5, since the release agent S adheres to the surface T 1 of the template T, the release agent S having a predetermined distance does not peel off from the surface T 1 of the template T. Thus, like in FIG. 11 (e) as shown, along the transfer pattern on the template T C S F will release film with a predetermined thickness forming (drawing 10 A6). Then, the holding portion 142 rises, the gas blown from the gas supply portion 145 to the template T, T 1 so that the surface was dried.

然後,藉由搬送單元20搬送模板T至轉移單元21,藉由模板搬送體12回到模板卡匣CT(圖10的工程A7)。如此一來,完成模板處理裝置1的一連串的模板處理,在模板T的表面T1,沿著轉印圖案C的形狀之脫模劑S會以預定的膜厚成膜。 Then, the template T is transferred to the transfer unit 21 by the transport unit 20, and the template transport body 12 is returned to the template cassette C T (item A7 of FIG. 10). In this way, a series of template processes of the template processing apparatus 1 are completed, and the release agent S along the shape of the transfer pattern C on the surface T 1 of the template T is formed into a film with a predetermined film thickness.

若根據以上的實施形態,則在工程A5中,可由超音波振動子110來對模板T上的脫模劑S賦予超音波振動, 因此脫模劑S的官能基SG會振動,乙醇A會進入脫模劑S與模板T的表面T1之間。如此一來,脫模劑分子的加水分解會藉由乙醇A而被促進,被加水分解的脫模劑分子與模板T的表面T1的氫氧基會藉由脫水縮合而被結合。因此,模板T的表面T1與脫模劑S的化學反應會被促進,該模板T的表面T1與脫模劑S的密著性會提升。亦即,可使脫模劑S短時間密著於模板T的表面T1。藉此,可使工程A1~工程A7的模板處理的處理能力提升。 According to the above embodiment, in the operation A5, the ultrasonic vibration is applied to the release agent S on the template T by the ultrasonic vibrator 110. Therefore, the functional group S G of the release agent S vibrates, and the ethanol A will It enters between the release agent S and the surface T 1 of the template T. As a result, the hydrolysis of the release agent molecules is promoted by the ethanol A, and the hydrolyzed release agent molecules and the hydroxyl groups on the surface T 1 of the template T are combined by dehydration condensation. Therefore, the chemical reaction of the surface T 1 of the template T with the releasing agent S is promoted, and the adhesion of the surface T 1 of the template T to the releasing agent S is enhanced. That is, the release agent S can be adhered to the surface T 1 of the template T for a short time. Thereby, the processing capability of the template processing of the engineering A1 to the engineering A7 can be improved.

並且,模板T是使用石英玻璃,為非晶形(amorphous)狀態。因此,模板T的表面T1的氫氧基是被配置於不規則的位置,且朝不規則的方向,難與脫模劑S反應。若根據本實施形態,則藉由對模板T上的脫模劑S賦予超音波振動,脫模劑S會振動,因此以往難結合的結合也會被促進。因此,可更短時間結合模板T的表面T1與脫模劑S,且可使其結合更牢固。 Further, the template T is made of quartz glass and is in an amorphous state. Therefore, the hydroxyl group on the surface T 1 of the template T is disposed at an irregular position, and it is difficult to react with the releasing agent S in an irregular direction. According to the present embodiment, the ultrasonic wave is applied to the release agent S on the template T, and the release agent S vibrates. Therefore, the bonding which is difficult to bond in the past is also promoted. Therefore, the surface T 1 of the template T and the release agent S can be combined in a shorter time, and the bonding can be made stronger.

並且,從超音波振動子110往模板T的超音波振動是在脫模劑S的厚度方向(垂直方向)振動,因此脫模劑S的官能基SG也是振動於厚度方向。亦即,官能基SG的振動方向與乙醇A的移動方向一致。因此,可效率佳地進行乙醇A的移動。另外,即使從脫模劑S的厚度方向以外的方向賦予超音波振動,還是可使脫模劑S振動,因此可比以往更促進模板T的表面T1與脫模劑S的化學反應。本實施形態是在其中最效率佳地使乙醇A移動來促進化學反應。 Further, since the ultrasonic vibration from the ultrasonic vibrator 110 to the template T vibrates in the thickness direction (vertical direction) of the release agent S, the functional group S G of the release agent S also vibrates in the thickness direction. That is, the vibration direction of the functional group S G coincides with the moving direction of the ethanol A. Therefore, the movement of the ethanol A can be performed efficiently. Further, even if the ultrasonic vibration is imparted in the direction other than the thickness direction of the release agent S, the release agent S can be vibrated, so that the chemical reaction between the surface T 1 of the template T and the release agent S can be promoted more than ever. In this embodiment, ethanol A is most efficiently moved to promote a chemical reaction.

並且,經發明者們深入檢討的結果,得知若使用乙醇作為反應促進劑,則可促進模板T的表面T1與脫模劑S的化學反應。亦即,若像本實施形態那樣在脫模劑S上供給乙醇A,則脫模劑分子的加水分解會被效率佳地進行。因此,可使脫模劑S更短時間密著於模板T的表面T1Further, as a result of intensive review by the inventors, it was found that when ethanol is used as the reaction accelerator, the chemical reaction between the surface T 1 of the template T and the releasing agent S can be promoted. In other words, when ethanol A is supplied to the release agent S as in the present embodiment, the hydrolysis of the release agent molecules is efficiently performed. Therefore, the release agent S can be adhered to the surface T 1 of the template T in a shorter time.

另外,本實施形態是在脫模劑分子的加水分解使用乙醇A,但亦可使用塗佈單元30內的環境中所含的水分子。該情況,雖模板T的表面T1與脫模劑S的化學反應要比使用乙醇A更花時間,但可省略用以供給乙醇A的機構(乙醇噴嘴130等),可使裝置構成簡略化。 Further, in the present embodiment, ethanol A is used for the hydrolysis of the release agent molecules, but water molecules contained in the environment in the coating unit 30 may be used. In this case, although the chemical reaction between the surface T 1 of the template T and the release agent S takes longer than the use of the ethanol A, the mechanism for supplying the ethanol A (the ethanol nozzle 130 or the like) can be omitted, and the device configuration can be simplified. .

以上的實施形態,在塗佈單元30中,超音波振動是從模板T的下方賦予,但亦可從模板T的上方賦予。例如圖15所示,超音波振動子110是在處理容器100的頂面,設在與載置台101所載置的模板T對向的位置。並且,在處理容器100的頂面亦設有使超音波振動子110移動於水平方向的振動子移動機構111。在該情況亦可在與模板T的表面T1垂直的方向,亦即脫模劑S的厚度方向賦予超音波振動,因此可使脫模劑S振動來促進模板T的表面T1與脫模劑S的化學反應。 In the above embodiment, the ultrasonic vibration is applied from the lower side of the template T in the coating unit 30, but may be given from above the template T. For example, as shown in FIG. 15, the ultrasonic vibrator 110 is disposed on the top surface of the processing container 100 at a position facing the template T placed on the mounting table 101. Further, a vibrator moving mechanism 111 for moving the ultrasonic vibrator 110 in the horizontal direction is also provided on the top surface of the processing container 100. In this case, ultrasonic vibration can also be imparted in a direction perpendicular to the surface T 1 of the template T, that is, in the thickness direction of the release agent S, so that the release agent S can be vibrated to promote the surface T 1 and the release of the template T. The chemical reaction of the agent S.

以上的實施形態是在塗佈單元30中,對模板T的脫模劑S上供給乙醇A,但亦可供給乙醇A與作為脫模劑S的溶劑例如有機溶劑的混合液。例如圖16所示,在第2臂122是取代乙醇噴嘴130,而設置混合液噴嘴200。在混合液噴嘴200除了連通至乙醇供給源131的供給管132 以外,還連接有連通至有機溶劑供給源201的供給管202。 In the above embodiment, the coating unit 30 supplies ethanol A to the release agent S of the template T, but may also supply a mixed solution of ethanol A and a solvent such as an organic solvent as the release agent S. For example, as shown in FIG. 16, the second arm 122 is provided with a mixed liquid nozzle 200 instead of the ethanol nozzle 130. The mixed liquid nozzle 200 is connected to the supply pipe 132 of the ethanol supply source 131. In addition to the supply pipe 202 connected to the organic solvent supply source 201, a supply pipe 202 is connected.

該情況,在工程A4中,從乙醇供給源131供給的乙醇A與從有機溶劑供給源201供給的有機溶劑是在混合液噴嘴200中被混合。而且,從混合液噴嘴200供給混合液至模板T的脫模劑S上。由於在被供給至此脫模劑S上的混合液中含有機溶劑,所以該混合液容易擴散於脫模劑S上。如此一來,可在脫模劑S上更均一地塗佈乙醇A,可適當地進行脫模劑分子的加水分解。因此,可促進模板T的表面T1與脫模劑S的化學反應。 In this case, in the project A4, the ethanol A supplied from the ethanol supply source 131 and the organic solvent supplied from the organic solvent supply source 201 are mixed in the mixed solution nozzle 200. Further, the mixed liquid is supplied from the mixed liquid nozzle 200 to the release agent S of the template T. Since the organic solvent is contained in the mixed liquid supplied to the release agent S, the mixed liquid is easily diffused on the release agent S. In this way, ethanol A can be more uniformly applied to the release agent S, and hydrolysis of the release agent molecules can be appropriately performed. Therefore, the chemical reaction of the surface T 1 of the template T with the releasing agent S can be promoted.

在此,上述實施形態的工程A4是在模板T上的脫模劑S乾燥之前在該脫模劑S上塗佈乙醇A,但也有在塗佈乙醇A之前乾燥脫模劑S的情況。該情況,乙醇A在脫模劑S上難以擴散。對此,因為乙醇A與有機溶劑的混合液在脫模劑S上容易擴散,所以即使乾燥脫模劑S,還是可適用本實施形態。 Here, the work A4 of the above embodiment is to apply the ethanol A to the release agent S before the release agent S on the template T is dried. However, the release agent S may be dried before the application of the ethanol A. In this case, it is difficult for ethanol A to diffuse on the release agent S. On the other hand, since the mixed liquid of the ethanol A and the organic solvent easily spreads on the release agent S, the present embodiment can be applied even if the release agent S is dried.

另外,本實施形態是在混合液噴嘴200中混合乙醇A與有機溶劑,但乙醇A與有機溶劑的混合方法並非限於此。例如亦可從混合乙醇A與有機溶劑而積存的混合液供給源(未圖示)供給混合液至混合液噴嘴200。 Further, in the present embodiment, ethanol A and an organic solvent are mixed in the mixed liquid nozzle 200, but the method of mixing the ethanol A and the organic solvent is not limited thereto. For example, a mixed liquid supply source (not shown) in which ethanol A and an organic solvent are mixed may be supplied to the mixed liquid nozzle 200.

在以上的實施形態的塗佈單元30中,如圖17所示,亦可在載置台101的上方配置用以使脫模劑S及乙醇A擴散於模板T上的支持板210。支持板210是例如具有平板形狀。支持板210是與載置台101上的模板T對向,配置 在與該模板T的表面T1的距離成為預定的距離例如1mm以內的位置。並且,支持板210是以能夠覆蓋模板T的表面T1全面之方式配置。另外,支持板210可藉由移動機構(未圖示)來移動於處理容器100內。 In the coating unit 30 of the above embodiment, as shown in FIG. 17, a support plate 210 for diffusing the release agent S and the ethanol A on the template T may be disposed above the mounting table 101. The support plate 210 is, for example, having a flat plate shape. Support plate 210 is a template T on the mounting table 101 pairs, arranged at a distance to the surface of the template T is T 1 becomes a predetermined distance, for example, a position within 1mm. Further, the support plate 210 is disposed in such a manner as to cover the surface T 1 of the template T. In addition, the support plate 210 can be moved into the processing container 100 by a moving mechanism (not shown).

在第1臂121是取代脫模劑噴嘴123,而設置下端部的供給口211a被配置成朝斜下方的脫模劑噴嘴211。脫模劑噴嘴211的供給口211a例如亦可為圓形狀或縫隙狀。同樣,在第2臂122也是取代乙醇噴嘴130,而設置下端部的供給口212a被配置成朝斜下方的乙醇噴嘴212。乙醇噴嘴212的供給口212a例如亦可為圓形狀或縫隙狀。 In place of the release agent nozzle 123, the first arm 121 is disposed, and the supply port 211a provided at the lower end portion is disposed to be obliquely downward toward the release agent nozzle 211. The supply port 211a of the release agent nozzle 211 may have a circular shape or a slit shape, for example. Similarly, in the second arm 122, the ethanol nozzle 130 is replaced, and the supply port 212a provided at the lower end portion is disposed so as to be obliquely downward toward the ethanol nozzle 212. The supply port 212a of the ethanol nozzle 212 may have a circular shape or a slit shape, for example.

該情況,在工程A3中,從脫模劑噴嘴211供給脫模劑S至模板T的表面T1的端部與支持板210的端部之間。被供給的脫模劑S是藉由毛細管現象(表面張力)來擴散於模板T的表面T1與支持板210之間。然後,在工程A4中,從乙醇噴嘴212供給乙醇A至模板T的表面T1的端部與支持板210的端部之間。被供給的乙醇A是藉由毛細管現象(表面張力)來擴散於模板T的脫模劑S與支持板210之間。 In this case, the project A3, the nozzle 211 is supplied from the releasing agent to the template T between the surface S T of the end portions 210 of the support plate 1 of a release agent. The supplied release agent S is diffused between the surface T 1 of the template T and the support plate 210 by capillary action (surface tension). Then, in the engineering and A4, ethanol is supplied between the template T A to T end surface of the support plate 1 and the end portion 210 of the nozzle 212 from ethanol. The supplied ethanol A is diffused between the release agent S of the template T and the support plate 210 by capillary action (surface tension).

若根據本實施形態,則由於脫模劑S及乙醇A容易擴散於模板T上,因此可在模板T上更均一地塗佈脫模劑S及乙醇A,可促進模板T的表面T1與脫模劑S的化學反應。又,由於乙醇A容易擴散於脫模劑S上,因此即使乾燥脫模劑S,還是可適用本實施形態。 According to the present embodiment, since the release agent S and the ethanol A are easily diffused on the template T, the release agent S and the ethanol A can be more uniformly applied to the template T, and the surface T 1 of the template T can be promoted. The chemical reaction of the release agent S. Further, since ethanol A easily diffuses on the release agent S, the present embodiment can be applied even if the release agent S is dried.

另外,以上的實施形態,支持板210是具有平板形狀 ,但亦可具有網孔形狀。該情況亦可藉由表面張力來使脫模劑S及乙醇A擴散於模板T的表面T1。並且,該情況,亦可由支持板210的上方來供給脫模劑S及乙醇A。 Further, in the above embodiment, the support plate 210 has a flat plate shape, but may have a mesh shape. In this case, the release agent S and the ethanol A may be diffused on the surface T 1 of the template T by surface tension. Further, in this case, the release agent S and the ethanol A may be supplied from above the support plate 210.

在以上的實施形態的工程A3及工程A4中,為了使脫模劑S及乙醇A擴散於模板T的表面T1,亦可使模板T移動。例如在工程A3中,對模板T上供給脫模劑S後,在脫模劑S未擴散於模板T的表面T1全面之類的情況時,可藉由模板移動機構120使模板T移動而令脫模劑S擴散。同樣在工程A4中亦可藉由模板移動機構120使模板T移動而令乙醇A擴散於模板T的脫模劑S上。 In the work A3 and the work A4 of the above embodiment, the template T can be moved in order to diffuse the release agent S and the ethanol A on the surface T 1 of the template T. For example, in engineering A3, after the supply of the release agent on the template T S, S when the releasing agent is not diffused in a surface of the template T T round. 1 and the like, may be moved by a template mechanism 120 causes the movement of the template T The release agent S is allowed to diffuse. Also in the work A4, the template T can be moved by the template moving mechanism 120 to diffuse the ethanol A onto the release agent S of the template T.

並且,在工程A3及工程A4中,為了使脫模劑S及乙醇A擴散於模板T的表面T1,亦可使模板T旋轉。該情況,例如圖18所示,在塗佈單元30的處理容器100內是取代上述實施形態的載置台101,而設置保持模板T而使旋轉的保持構件220。保持構件220的中央部分是形成有向下凹陷收容模板T的收容部221。在收容部221的下部是形成有比模板T的外形更小的溝部221a。因此,在收容部221內,藉由溝部221a,模板T的下面內周部不會與保持構件220接觸,僅模板T的下面外周部被保持構件220支撐。收容部221是如圖19所示具有適合於模板T的外形之大致四角形的平面形狀。在收容部221是形成有複數個從側面突出至內側的突出部222,藉由此突出部222來進行收容部221中所收容之模板T的定位。並且,在從搬送單元20的搬送臂交接模板T至收容部221時, 為了避免該搬送臂與收容部221干擾,而於收容部221的外周形成有四處缺口部223。 Further, in the works A3 and A4, the template T can be rotated in order to diffuse the release agent S and the ethanol A on the surface T 1 of the template T. In this case, for example, as shown in FIG. 18, in the processing container 100 of the coating unit 30, instead of the mounting table 101 of the above-described embodiment, the holding member 220 that holds the template T and rotates is provided. The central portion of the holding member 220 is formed with a receiving portion 221 that houses the template T downwardly. In the lower portion of the accommodating portion 221, a groove portion 221a having a smaller outer shape than the template T is formed. Therefore, in the accommodating portion 221, the inner peripheral portion of the lower surface of the template T does not come into contact with the holding member 220 by the groove portion 221a, and only the outer peripheral portion of the lower surface of the template T is supported by the holding member 220. The accommodating portion 221 has a substantially quadrangular planar shape suitable for the outer shape of the template T as shown in FIG. In the accommodating portion 221, a plurality of protruding portions 222 projecting from the side surface to the inner side are formed, and the protruding portion 222 is used to position the template T accommodated in the accommodating portion 221. Further, when the template T is transferred from the transfer arm of the transport unit 20 to the accommodating portion 221, in order to prevent the transfer arm from interfering with the accommodating portion 221, four notch portions 223 are formed on the outer circumference of the accommodating portion 221.

如圖18所示般,保持構件220是被安裝於蓋體224,在保持構件220的下方,經由傳動軸(shaft)225而設有旋轉驅動部226。藉由此旋轉驅動部226,保持構件220可繞著垂直軸以預定的速度旋轉、且可昇降。 As shown in FIG. 18, the holding member 220 is attached to the lid body 224, and a rotation driving portion 226 is provided below the holding member 220 via a shaft 225. By thus rotating the driving portion 226, the holding member 220 can be rotated at a predetermined speed about the vertical axis and can be raised and lowered.

在保持構件220的周圍設有接收從模板T飛散或落下的脫模劑而回收的杯230。在杯230的下面連接將回收的脫模劑排出的排出管231及將杯230內的環境排氣的排氣管232。 A cup 230 that receives the release agent that is scattered or dropped from the template T is provided around the holding member 220. A discharge pipe 231 through which the recovered release agent is discharged and an exhaust pipe 232 that exhausts the environment in the cup 230 are connected to the lower surface of the cup 230.

在第1臂121是取代脫模劑噴嘴123,而設置吐出口的形狀為圓形狀的脫模劑噴嘴240。同樣在第2臂121是取代乙醇噴嘴130,而具有吐出口的形狀為圓形狀的乙醇噴嘴241。 The first arm 121 is a mold release agent nozzle 240 having a circular shape in place of the release agent nozzle 123. Similarly, the second arm 121 is an ethanol nozzle 241 having a circular shape in place of the ethanol nozzle 130 and having a discharge port.

在處理容器100的頂面,與被保持於保持構件220的模板T對向的位置設有超音波振動子110。並且,在處理容器100的頂面亦設有使超音波振動子110水平方向移動的振動子移動機構111。另外,就本實施形態而言,超音波振動子110及振動子移動機構111是設於模板T的上方,但亦可設於該模板T的下方。例如亦可將該等超音波振動子110及振動子移動機構111配置於溝部221a內。 On the top surface of the processing container 100, an ultrasonic vibrator 110 is provided at a position opposed to the template T held by the holding member 220. Further, a vibrator moving mechanism 111 for moving the ultrasonic vibrator 110 in the horizontal direction is also provided on the top surface of the processing container 100. Further, in the present embodiment, the ultrasonic vibrator 110 and the vibrator moving mechanism 111 are provided above the template T, but may be provided below the template T. For example, the ultrasonic vibrator 110 and the vibrator moving mechanism 111 may be disposed in the groove portion 221a.

該情況,在工程A3中,被搬送至塗佈單元30的模板T是交接至保持構件220。接著,使脫模劑噴嘴240移動至模板T的中心部上方,且使模板T旋轉。然後,從脫模 劑噴嘴240供給脫模劑S至旋轉中的模板T上,藉由遠心力來使脫模劑S擴散至模板T上。 In this case, in the project A3, the template T conveyed to the coating unit 30 is delivered to the holding member 220. Next, the release agent nozzle 240 is moved above the center portion of the template T, and the template T is rotated. Then, from demolding The agent nozzle 240 supplies the release agent S to the rotating template T, and the release agent S is diffused onto the template T by the telecentric force.

然後,在工程A4中,使乙醇噴嘴241移動至模板T的中心部上方,且繼續使模板T旋轉。而且,從乙醇噴嘴241供給乙醇A至旋轉中的模板T上,藉由遠心力來使乙醇A擴散至模板T上。 Then, in the work A4, the ethanol nozzle 241 is moved over the center portion of the template T, and the template T is continuously rotated. Further, ethanol A is supplied from the ethanol nozzle 241 to the rotating template T, and the ethanol A is diffused onto the template T by the telecentric force.

在本實施形態中,亦可在模板T上更均一地塗佈脫模劑S及乙醇A,可促進模板T的表面T1與脫模劑S的化學反應。 In the present embodiment, the release agent S and the ethanol A can be more uniformly applied to the template T, and the chemical reaction between the surface T 1 of the template T and the release agent S can be promoted.

以上的實施形態的塗佈單元30是從脫模劑噴嘴123、211、240供給脫模劑S至模板T上,但例如亦可使模板T浸漬於積存有脫模劑S的浸漬槽,在模板T上塗佈脫模劑S。 In the coating unit 30 of the above embodiment, the release agent S is supplied from the release agent nozzles 123, 211, and 240 to the template T. For example, the template T may be immersed in the immersion tank in which the release agent S is stored. The release agent S is applied to the template T.

以上的實施形態是在塗佈單元30中,在模板T的脫模劑S上供給液體狀的乙醇A,但亦可在脫模劑S上供給氣化的乙醇A。該情況,在工程A4中,對處理容器100內供給氣化的乙醇A,該處理容器100內的環境形成乙醇環境。並且,在工程A4中,亦可一邊使處理容器100內形成乙醇環境,一邊從乙醇噴嘴130供給液體狀的乙醇A至脫模劑S上。 In the above embodiment, the liquid A-form ethanol A is supplied to the release agent S of the template T in the coating unit 30, but the vaporized ethanol A may be supplied to the release agent S. In this case, in the project A4, the vaporized ethanol A is supplied into the processing container 100, and the environment in the processing container 100 forms an ethanol environment. Further, in the work A4, the liquid ethanol A can be supplied from the ethanol nozzle 130 to the release agent S while the ethanol environment is formed in the processing container 100.

以上的實施形態是在塗佈單元30中,在模板T的表面T1供給液體狀的脫模劑S,但亦可使氣化的脫模劑氣體附著於模板T的表面T1。該情況,在模板處理裝置1的第1處理區塊G1是取代圖2所示的塗佈單元30及清洗單 元31,而配置後述的塗佈單元250。同樣,在第2處理區塊G2亦取代塗佈單元32及清洗單元33,而配置塗佈單元250。 In the above embodiment, the liquid release agent S is supplied to the surface T 1 of the template T in the coating unit 30, but the vaporized release agent gas may be adhered to the surface T 1 of the template T. In this case, in the first processing block G1 of the template processing apparatus 1, in place of the coating unit 30 and the cleaning unit 31 shown in FIG. 2, a coating unit 250 to be described later is disposed. Similarly, the coating unit 250 is disposed in place of the coating unit 32 and the cleaning unit 33 in the second processing block G2.

如圖20所示,塗佈單元250是具有:載置模板T的載置台260、及設於該載置台260上方的蓋體261。蓋體261是構成例如藉由昇降機構(未圖示)在垂直方向移動自如。並且,蓋體261的下面是形成開口。然後,蓋體261與載置台260會成為一體,而可形成密閉的處理空間K。 As shown in FIG. 20, the coating unit 250 has a mounting table 260 on which the template T is placed, and a lid 261 provided above the mounting table 260. The lid body 261 is configured to be movable in the vertical direction by, for example, a lifting mechanism (not shown). Further, the lower surface of the lid body 261 is an opening. Then, the lid body 261 and the mounting table 260 are integrated to form a sealed processing space K.

在載置台260上,以模板T的表面T1朝上方的方式載置該模板T。在載置台260的上面設有控制模板T的溫度之溫度控制板270。溫度控制板270是例如內藏制冷元件(Peltier device)等,可將模板T調節成預定的溫度。在載置台260內設有用以由下方支撐模板T使昇降的昇降銷271。昇降銷271可藉由昇降驅動部272來上下動。在載置台260的上面形成有在厚度方向貫通該上面的貫通孔273,昇降銷271是形成插通貫通孔273。 The template T is placed on the mounting table 260 such that the surface T 1 of the template T faces upward. A temperature control plate 270 that controls the temperature of the template T is provided on the upper surface of the mounting table 260. The temperature control panel 270 is, for example, a built-in cooling element (Peltier device) or the like, and can adjust the template T to a predetermined temperature. A lift pin 271 for lifting and lowering the template T from below is provided in the mounting table 260. The lift pin 271 can be moved up and down by the lift drive unit 272. A through hole 273 that penetrates the upper surface in the thickness direction is formed on the upper surface of the mounting table 260, and the lift pin 271 forms the insertion through hole 273.

在蓋體261的頂面,與被載置於載置台260上的模板T對向的位置設有:對模板T上的脫模劑S賦予超音波振動的超音波振動子280、及使該超音波振動子280移動於水平方向的振動子移動機構281。該等超音波振動子280及振動子移動機構281是與上述實施形態的超音波振動子110及振動子移動機構111同樣,因此省略說明。另外,在本實施形態中,超音波振動子280及振動子移動機構 281是被設於模板T的上方,但亦可設於該模板T的下方。例如亦可將該等超音波振動子280及振動子移動機構281配置於載置台260的上面。 On the top surface of the lid body 261, at a position facing the template T placed on the mounting table 260, an ultrasonic vibrator 280 that imparts ultrasonic vibration to the release agent S on the template T is provided, and The ultrasonic vibrator 280 moves to the vibrator moving mechanism 281 in the horizontal direction. Since the ultrasonic vibrator 280 and the vibrator moving mechanism 281 are the same as those of the ultrasonic vibrator 110 and the vibrator moving mechanism 111 of the above-described embodiment, description thereof will be omitted. Further, in the present embodiment, the ultrasonic vibrator 280 and the vibrator moving mechanism 281 is disposed above the template T, but may be disposed below the template T. For example, the ultrasonic vibrator 280 and the vibrator moving mechanism 281 may be disposed on the upper surface of the mounting table 260.

並且,在蓋體261的頂面設有對模板T上供給脫模劑氣體及水蒸氣的氣體供給管290。在氣體供給管290連接供給脫模劑氣體的脫模劑供給源291、及供給水蒸氣的水蒸氣供給源292。並且,在氣體供給管290設有控制從脫模劑供給源291供給的脫模劑氣體、及從水蒸氣供給源292供給的水蒸氣的流動之含閥或流量調節部等的供給機器群293。另外,在本實施形態,氣體供給管290是具有作為矽烷耦合劑供給部的機能。 Further, a gas supply pipe 290 for supplying a release agent gas and water vapor to the die plate T is provided on the top surface of the lid body 261. The gas supply pipe 290 is connected to a release agent supply source 291 that supplies the release agent gas, and a water vapor supply source 292 that supplies the steam. Further, the gas supply pipe 290 is provided with a supply device group 293 including a valve or a flow rate adjusting unit that controls the flow of the release agent gas supplied from the release agent supply source 291 and the water vapor supplied from the steam supply source 292. . Further, in the present embodiment, the gas supply pipe 290 has a function as a decane coupling agent supply unit.

脫模劑供給源291是在內部積存液體狀的脫模劑S。並且,在脫模劑供給源291連接有對該脫模劑供給源291內供給氮氣的氣體供給管(未圖示)。在脫模劑供給源291是藉由對內部供給氮氣來使液體狀的脫模劑S氣化而生成脫模劑氣體。此脫模劑氣體是以上述氮氣作為載氣來供給至氣體供給管290。 The release agent supply source 291 is a mold release agent S which is stored in a liquid state. Further, a gas supply pipe (not shown) that supplies nitrogen gas to the release agent supply source 291 is connected to the release agent supply source 291. In the release agent supply source 291, a liquid release agent S is vaporized by supplying nitrogen gas to the inside to generate a release agent gas. This release agent gas is supplied to the gas supply pipe 290 using the above nitrogen gas as a carrier gas.

水蒸氣供給源292是例如在內部積存液體狀的水。然後,例如加熱此液體狀的水而使氣化,產生水蒸氣。 The steam supply source 292 is, for example, a liquid water stored therein. Then, for example, the liquid water is heated to vaporize, and water vapor is generated.

在蓋體261的側面連接有將處理空間K的環境排氣的排氣管294。在排氣管294連接用以將處理空間K的環境抽真空的排氣泵295。 An exhaust pipe 294 that exhausts the environment of the processing space K is connected to the side surface of the lid body 261. An exhaust pump 295 for evacuating the environment of the processing space K is connected to the exhaust pipe 294.

該情況,在工程A3中,被搬送至塗佈單元250的模板T是被交接至昇降銷271,載置於載置台260。此時, 載置台260上的模板T是藉由溫度控制板270來溫調成預定的溫度,例如50℃。接著,蓋體261會下降,以該蓋體261及載置台260來形成被密閉的處理空間K。然後,從氣體供給管290供給氣體狀的脫模劑氣體至處理空間K。被供給的脫模劑氣體是沿著模板T的表面T1上的轉印圖案C來堆積。然後,在工程A4中,從氣體供給管290供給水蒸氣至處理空間K,該水蒸氣會被供給至模板T上所堆積的脫模劑S。 In this case, in the item A3, the template T conveyed to the coating unit 250 is transferred to the lift pins 271 and placed on the mounting table 260. At this time, the template T on the mounting table 260 is temperature-tuned to a predetermined temperature by the temperature control panel 270, for example, 50 °C. Then, the lid body 261 is lowered, and the lid body 261 and the mounting table 260 form a sealed processing space K. Then, a gaseous release agent gas is supplied from the gas supply pipe 290 to the processing space K. The supplied release agent gas is deposited along the transfer pattern C on the surface T 1 of the template T. Then, in the work A4, water vapor is supplied from the gas supply pipe 290 to the processing space K, and this water vapor is supplied to the releasing agent S deposited on the template T.

另外,在上述的工程A4是對模板T上的脫模劑S供給水蒸氣,但亦可與上述實施形態同樣供給乙醇,例如t-pentyl alcohol。該情況,最好使t-pentyl alcohol氣化,從氣體供給管290供給至處理空間K。並且,在工程A3及A4中,亦可同時進行來自氣體供給管290的脫模劑氣體及水蒸氣(t-pentyl alcohol)的供給。 Further, in the above-described work A4, water vapor is supplied to the release agent S on the template T, but ethanol, for example, t-pentyl alcohol, may be supplied in the same manner as in the above embodiment. In this case, it is preferable that the t-pentyl alcohol is vaporized and supplied from the gas supply pipe 290 to the processing space K. Further, in the projects A3 and A4, the supply of the release agent gas and the t-pentyl alcohol from the gas supply pipe 290 can be simultaneously performed.

然後,在工程A5中,從超音波振動子280對模板T上的脫模劑S賦予超音波振動。如此一來,模板T的表面T1與脫模劑S的化學反應會被促進,該模板T的表面T1與脫模劑S的密著性會提升。具體而言,藉由水蒸氣,在模板T上堆積的脫模劑S的脫模劑分子會被加水分解,且模板T的表面T1與脫模劑分子會藉由脫水縮合而被結合。另外,在此結合之超音波振動的作用是與上述實施形態同樣,因此省略說明。如此一來,在模板T上沿著轉印圖案C的脫模膜SF會以預定的膜厚成膜。另外,在模板T上形成脫模膜SF之後,亦可將處理空間K的環境置換成 不活性氣體,例如氮氣。 Then, in the project A5, ultrasonic vibration is applied from the ultrasonic vibrator 280 to the release agent S on the template T. Thus, the surface of the template T is T 1 and the chemical reaction will be to promote the release agent S, the template T T adhesion surface 1 S of the release agent will increase. Specifically, the release agent molecules of the release agent S deposited on the template T by water vapor are hydrolyzed, and the surface T 1 of the template T and the release agent molecules are combined by dehydration condensation. In addition, since the function of the ultrasonic vibration combined here is the same as that of the above embodiment, the description thereof is omitted. As a result, the release film S F along the transfer pattern C on the template T is formed into a film at a predetermined film thickness. Further, after the release film S F is formed on the template T, the environment of the treatment space K may be replaced with an inert gas such as nitrogen.

在本實施形態的工程A3,因為氣體狀的脫模劑氣體會沿著模板T上的轉印圖案C而堆積,所以不需要清洗脫模劑S。因此,可省略上述實施形態的工程A6。 In the work A3 of the present embodiment, since the gas-like release agent gas is deposited along the transfer pattern C on the template T, it is not necessary to clean the release agent S. Therefore, the work A6 of the above embodiment can be omitted.

在以上的實施形態的塗佈單元30中,在模板T上塗佈脫模劑S時,亦可一邊對模板T的表面T1照射紫外線,一邊塗佈脫模劑S。並且,在模板T上塗佈脫模劑S之後,亦可一面對該模板T上的脫模劑S賦予超音波振動,一面更將模板T上的脫模劑S加熱至預定的溫度,例如200℃。藉由如此對模板T的表面T1照射紫外線,或加熱模板T上的脫模劑S,可使模板T的表面T1與脫模劑S的密著性提升。 In the coating unit 30 of the above embodiment, when the release agent S is applied onto the template T, the release agent S may be applied while irradiating the surface T 1 of the template T with ultraviolet rays. Further, after the release agent S is applied onto the template T, the release agent S on the template T may be heated to a predetermined temperature while imparting ultrasonic vibration to the release agent S on the template T. For example 200 ° C. By irradiating the surface T 1 of the template T with ultraviolet rays or heating the release agent S on the template T in this manner, the adhesion of the surface T 1 of the template T to the release agent S can be improved.

以上的實施形態的清洗單元31是藉由將模板T浸漬於浸漬槽141所積存的有機溶劑來清洗脫模劑S,但亦可使用具有與塗佈單元30同樣構成的清洗單元。該情況,取代塗佈單元30的脫模劑噴嘴123、211、240,而使用對模板T上供給作為脫模劑S的清洗液的有機溶劑之清洗液噴嘴。 In the cleaning unit 31 of the above embodiment, the release agent S is washed by immersing the template T in the organic solvent accumulated in the immersion tank 141, but a cleaning unit having the same configuration as that of the coating unit 30 may be used. In this case, instead of the release agent nozzles 123, 211, and 240 of the coating unit 30, a cleaning liquid nozzle that supplies an organic solvent as a cleaning liquid for the release agent S to the template T is used.

在以上的實施形態是說明有關在作為基板的模板T上將作為矽烷耦合劑的脫模劑S成膜時,但基板與矽烷耦合劑的組合種類並非限於此。例如在作為基板的晶圓上將作為矽烷耦合劑的密著劑成膜時也可適用本發明。 In the above embodiment, when the release agent S as a decane coupling agent is formed on the template T as a substrate, the type of combination of the substrate and the decane coupling agent is not limited thereto. The present invention is also applicable to, for example, when a binder as a decane coupling agent is formed on a wafer as a substrate.

往晶圓上之密著膜的成膜是在具有與模板處理裝置1同樣構成的晶圓處理裝置進行。並且,如圖21所示,模 板處理裝置1及晶圓處理裝置310亦可設於壓印系統300。另外,晶圓處理裝置310亦可與上述實施形態的模板處理裝置1同樣獨立設置,但在本實施形態是針對設於壓印系統300內的情況進行說明。 The film formation of the adhesion film on the wafer is performed by a wafer processing apparatus having the same configuration as that of the template processing apparatus 1. And, as shown in Figure 21, the mode The plate processing apparatus 1 and the wafer processing apparatus 310 may be provided in the imprint system 300. Further, the wafer processing apparatus 310 may be provided separately from the template processing apparatus 1 of the above-described embodiment. However, in the present embodiment, the case where it is provided in the imprint system 300 will be described.

壓印系統300是除了上述模板處理裝置1及晶圓處理裝置310以外,還具有利用在模板處理裝置1所被處理的模板T,在晶圓處理裝置310所被處理的晶圓W上形成阻劑圖案之壓印單元320。在壓印單元320與模板處理裝置1之間配置有進行模板T的交接之介面站321。並且,在壓印單元320與晶圓處理裝置2之間配置有進行模板T的交接之介面站322。亦即,模板處理裝置1、介面站321、壓印單元320、介面站322、晶圓處理裝置310是依此順序來排列於Y方向(圖21的左右方向)配置,且連接成一體。 The imprint system 300 has a template T processed by the template processing apparatus 1 in addition to the template processing apparatus 1 and the wafer processing apparatus 310, and forms a resistance on the wafer W to be processed by the wafer processing apparatus 310. Imprinting unit 320 of the agent pattern. An interface station 321 that performs the transfer of the template T is disposed between the imprint unit 320 and the template processing apparatus 1. Further, an interface station 322 that performs the transfer of the template T is disposed between the imprint unit 320 and the wafer processing apparatus 2. That is, the template processing apparatus 1, the interface station 321, the imprinting unit 320, the interface station 322, and the wafer processing apparatus 310 are arranged in the Y direction (the horizontal direction in FIG. 21) in this order, and are integrally connected.

晶圓處理裝置310是具有一體連接晶圓搬出入站330及晶圓處理站331的構成,該晶圓搬出入站330係以卡匣單位在外部與壓印系統300之間搬出入複數片例如25片的晶圓W,或對晶圓卡匣CW搬出入晶圓W,該晶圓處理站331是具備對晶圓W實施預定的處理的複數個處理單元。 The wafer processing apparatus 310 has a configuration in which the wafer loading/unloading station 330 and the wafer processing station 331 are integrally connected, and the wafer loading/unloading station 330 carries out a plurality of sheets between the outside and the imprinting system 300 in a cassette unit, for example. The wafer W of 25 sheets or the wafer W is carried into and out of the wafer W. The wafer processing station 331 is provided with a plurality of processing units for performing predetermined processing on the wafer W.

在晶圓搬出入站330設有卡匣載置台340。卡匣載置台340是使複數的晶圓卡匣CW在X方向(圖21中的上下方向)載置自如成一列。亦即,晶圓搬出入站330是構成可保有複數的晶圓W。 A cassette mounting table 340 is provided at the wafer carry-in/out station 330. The cassette mounting table 340 has a plurality of wafer cassettes C W placed in a row in the X direction (vertical direction in FIG. 21). That is, the wafer carry-in/out station 330 constitutes a wafer W that can hold a plurality of numbers.

在晶圓搬出入站330設有可在延伸於X方向的搬送路341上移動的晶圓搬送體342。晶圓搬送體342是在水平方向伸縮自如,亦可在垂直方向及繞著垂直軸(θ方向)移動自如,可在晶圓卡匣CW與壓印單元310之間搬送晶圓W。 A wafer conveyance body 342 that can move on the conveyance path 341 extending in the X direction is provided in the wafer carry-in/out station 330. The wafer transfer body 342 is expandable and contractible in the horizontal direction, and can be moved in the vertical direction and around the vertical axis (θ direction), and the wafer W can be transferred between the wafer cassette C W and the imprint unit 310.

在晶圓處理站331的中心部設有搬送單元350。在此搬送單元350的周邊,各種處理單元會被配置成多段,例如配置有4個的處理區塊F1~F4。在晶圓處理站331的正面側(圖21的X方向負方向側),從晶圓搬出入站330側依序配置有第1處理區塊F1、第2處理區塊F2。在晶圓處理站331的背面側(圖21的X方向正方向側),從晶圓搬出入站330側依序配置有第3處理區塊F3、第4處理區塊F4。在晶圓處理站331的晶圓搬出入站330側配置有用以進行晶圓W的交接之轉移單元351。並且,在晶圓處理站331的介面站322側亦配置有用以進行晶圓W的交接之轉移單元352。 A transport unit 350 is provided at a central portion of the wafer processing station 331. Around the transport unit 350, various processing units are arranged in a plurality of stages, for example, four processing blocks F1 to F4 are arranged. On the front side of the wafer processing station 331 (on the negative side in the X direction of FIG. 21), the first processing block F1 and the second processing block F2 are sequentially arranged from the wafer loading/unloading station 330 side. On the back side of the wafer processing station 331 (the positive side in the X direction of FIG. 21), the third processing block F3 and the fourth processing block F4 are sequentially disposed from the wafer loading/unloading station 330 side. A transfer unit 351 for transferring the wafer W is disposed on the wafer carry-in/outlet 330 side of the wafer processing station 331. Further, a transfer unit 352 for transferring the wafer W is also disposed on the interface station 322 side of the wafer processing station 331.

搬送單元350是具有保持晶圓W來搬送且在水平方向、垂直方向及繞著垂直軸移動自如的搬送臂。而且,搬送單元350可對配置於處理區塊F1~F4內之後述的各種處理單元及轉移單元351、352搬送晶圓W。 The transport unit 350 is a transport arm that holds the wafer W and transports it in the horizontal direction, the vertical direction, and the vertical axis. Further, the transport unit 350 can transport the wafer W to various processing units and transfer units 351 and 352 which will be described later in the processing blocks F1 to F4.

如圖22所示,在第1處理區塊F1由下依序重疊有複數的液處理單元,例如在晶圓W的表面(被處理面)塗佈作為矽烷耦合劑的密著劑之作為成膜裝置的塗佈單元360、及清洗晶圓W上的密著劑之清洗單元361的2段。 第2處理區塊F2也同樣由下依序重疊塗佈單元362及清洗單元363的2段。並且,在第1處理區塊F1及第2處理區塊F2的最下段分別設有用以對上述液處理單元供給各種處理液的化學室364、365。 As shown in FIG. 22, in the first processing block F1, a plurality of liquid processing units are sequentially stacked, and for example, an adhesive agent as a decane coupling agent is applied to the surface (processed surface) of the wafer W. The coating unit 360 of the membrane device and the cleaning unit 361 for cleaning the adhesive on the wafer W are in two stages. Similarly to the second processing block F2, the coating unit 362 and the cleaning unit 363 are sequentially stacked in two stages. Further, in the lowermost stages of the first processing block F1 and the second processing block F2, chemical chambers 364 and 365 for supplying various processing liquids to the liquid processing unit are provided.

另外,塗佈單元360、362的構成是與在模板T上塗佈脫模劑S的塗佈單元30的構成同樣,因此省略說明。但,取代脫模劑噴嘴123,而設置在晶圓W上塗佈密著劑的密著劑噴嘴。密著劑是使晶圓W與阻劑膜的密著性提升者,與脫模劑S同樣為矽烷耦合劑。因此,密著劑中的密著劑分子是具有2個的官能基。亦即,一官能基是OR基(R 例如烷基)。又,其他的官能基SG是容易與阻劑膜反應的官能基,具有有機物成分。 In addition, the configuration of the coating units 360 and 362 is the same as the configuration of the coating unit 30 that applies the release agent S to the template T, and thus the description thereof is omitted. However, instead of the release agent nozzle 123, a sealant nozzle on which the adhesive agent is applied to the wafer W is provided. The adhesive agent is used to improve the adhesion between the wafer W and the resist film, and is similar to the release agent S as a decane coupling agent. Therefore, the adhesive molecule in the adhesive has two functional groups. That is, the monofunctional group is an OR group (R For example, alkyl). Further, the other functional group SG is a functional group which easily reacts with the resist film, and has an organic component.

並且,清洗單元361、363的構成是與清洗模板T上的脫模劑S的清洗單元31的構成同樣,因此省略說明。亦即,在該等清洗單元361、363中也使用例如有機溶劑作為清洗液。 Further, the configuration of the cleaning units 361 and 363 is the same as the configuration of the cleaning unit 31 for cleaning the release agent S on the template T, and thus the description thereof will be omitted. That is, for example, an organic solvent is used as the cleaning liquid in the cleaning units 361 and 363.

如圖23所示,在第3處理區塊F3由下依序重疊有2段對晶圓W照射紫外線,將在晶圓W上形成密著膜之前的表面(被處理面)洗淨的洗淨單元370、371。並且,在第4處理區塊F4也與第3處理區塊F3同樣,由下依序重疊有2段洗淨單元372、373。 As shown in FIG. 23, in the third processing block F3, the wafer W is irradiated with ultraviolet rays in two stages, and the surface (processed surface) before the adhesion film is formed on the wafer W is washed. Net unit 370, 371. Further, in the fourth processing block F4, similarly to the third processing block F3, two cleaning units 372 and 373 are superposed in this order.

另外,洗淨單元370~373的構成也是與洗淨模板T的表面T1的洗淨單元40的構成同樣,因此省略說明。 The configuration of the cleaning units 370 to 373 is also the same as the configuration of the cleaning unit 40 for cleaning the surface T1 of the template T, and thus the description thereof will be omitted.

在介面站321如圖21所示設有在延伸於X方向的搬 送路380上移動的模板搬送體381。並且,在搬送路380的X方向正方向側配置有使模板T的表背面反轉的反轉單元382,在搬送路380的X方向負方向側設有暫時性地保管複數個模板T的緩衝卡匣383。模板搬送體381是在水平方向伸縮自如,亦可在垂直方向及繞著垂直軸(θ方向)移動自如,可在模板處理站3、反轉單元382、緩衝卡匣383、壓印單元320之間搬送模板T。另外,在模板處理裝置1的模板處理站3是在搬送單元20的介面站321側配置有用以進行模板T的交接之轉移單元384。 The interface station 321 is provided with a movement extending in the X direction as shown in FIG. The template transport body 381 that moves on the transport path 380. In the forward direction of the X direction of the conveyance path 380, the inversion unit 382 which reverses the front and back sides of the template T is disposed, and the buffer of the plurality of templates T is temporarily stored in the negative direction of the X direction of the conveyance path 380. Card 383. The template transport body 381 is expandable and contractible in the horizontal direction, and is movable in the vertical direction and around the vertical axis (θ direction), and can be used in the template processing station 3, the inversion unit 382, the buffer cassette 383, and the imprint unit 320. Transfer template T between. Further, in the template processing station 3 of the template processing apparatus 1, a transfer unit 384 for performing the transfer of the template T is disposed on the interface station 321 side of the transport unit 20.

在介面站322設有在延伸於X方向的搬送路390上移動的晶圓搬送體391。並且,在搬送路390的X方向負方向側配置有暫時性地保管複數個晶圓W的緩衝卡匣392。晶圓搬送體391是在水平方向伸縮自如,亦可在垂直方向及繞著垂直軸(θ方向)移動自如,可在晶圓處理站331、緩衝卡匣392、壓印單元320之間搬送晶圓W。 The interface station 322 is provided with a wafer transfer body 391 that moves on a transfer path 390 that extends in the X direction. Further, a buffer cassette 392 that temporarily stores a plurality of wafers W is disposed on the negative side in the X direction of the transport path 390. The wafer transfer body 391 is expandable and contractible in the horizontal direction, and can be moved in the vertical direction and around the vertical axis (θ direction), and can be transferred between the wafer processing station 331, the buffer cassette 392, and the imprint unit 320. Round W.

其次,說明有關上述壓印單元320的構成。壓印單元320是如圖24所示具有在側面形成有模板T的搬出入口(未圖示)及晶圓W的搬出入口(未圖示)的處理容器400。 Next, the configuration of the above-described imprint unit 320 will be described. The imprint unit 320 is a processing container 400 having a carry-out port (not shown) in which a template T is formed on the side surface and a carry-out port (not shown) of the wafer W as shown in FIG.

在處理容器400內的底面設有載置晶圓W加以保持的晶圓保持部401。晶圓W是以其被處理面朝上方的方式載置於晶圓保持部401的上面。在晶圓保持部401內設有用以由下方支撐晶圓W使昇降的昇降銷402。昇降銷402可藉由昇降驅動部403來上下動。在晶圓保持部401的上 面形成有在厚度方向貫通該上面的貫通孔404,昇降銷402是形成插通貫通孔404。並且,晶圓保持部401可藉由該晶圓保持部401的下方所設的移動機構405來移動於水平方向,且繞著垂直軸旋轉自如。 A wafer holding portion 401 on which a wafer W is placed and held is provided on the bottom surface of the processing container 400. The wafer W is placed on the upper surface of the wafer holding portion 401 so that the surface to be processed faces upward. A lift pin 402 for supporting and lowering the wafer W from below is provided in the wafer holding portion 401. The lift pin 402 can be moved up and down by the lift drive unit 403. On the wafer holding portion 401 The surface is formed with a through hole 404 that penetrates the upper surface in the thickness direction, and the lift pin 402 is formed with the through hole 404. Further, the wafer holding portion 401 is movable in the horizontal direction by the moving mechanism 405 provided below the wafer holding portion 401, and is rotatable about the vertical axis.

如圖25所示,在晶圓保持部401的X方向負方向(圖25的下方向)側設有沿著Y方向(圖25的左右方向)延伸的軌道410。軌道410是例如從晶圓保持部401的Y方向負方向(圖25的左方向)側的外方形成至Y方向正方向(圖25的右方向)側的外方。在軌道410安裝臂411。 As shown in FIG. 25, a track 410 extending in the Y direction (the horizontal direction in FIG. 25) is provided on the side of the wafer holding portion 401 in the negative X direction (the downward direction in FIG. 25). The rail 410 is formed, for example, from the outside in the negative direction of the Y direction of the wafer holding portion 401 (the left direction in FIG. 25) to the outside in the positive direction of the Y direction (the right direction in FIG. 25). An arm 411 is mounted on the track 410.

在臂411是設有對晶圓W上供給阻劑液的阻劑液噴嘴412。阻劑液噴嘴412是例如與晶圓W的直徑大小相同或更長,具有沿著X方向的細長形狀。阻劑液噴嘴412是例如使用噴墨方式的噴嘴,在阻劑液噴嘴412的下部形成有沿著長度方向形成一列的複數個供給口(未圖示)。而且,阻劑液噴嘴412可嚴密地控制阻劑液的供給時機、阻劑液的供給量等。 The arm 411 is provided with a resist liquid nozzle 412 that supplies a resist liquid to the wafer W. The resist liquid nozzle 412 is, for example, the same or longer than the diameter of the wafer W, and has an elongated shape along the X direction. The resist liquid nozzle 412 is, for example, a nozzle using an ink jet method, and a plurality of supply ports (not shown) that are formed in a row along the longitudinal direction are formed in the lower portion of the resist liquid nozzle 412. Further, the resist liquid nozzle 412 can strictly control the supply timing of the resist liquid, the supply amount of the resist liquid, and the like.

臂411是藉由噴嘴驅動部413在軌道410上移動自如。藉此,阻劑液噴嘴412可從晶圓保持部401的Y方向正方向側的外方所設置的待機部414移動至晶圓保持部401上的晶圓W的上方,且可在該晶圓W的表面上移動於晶圓W的徑方向。並且,臂411是藉由噴嘴驅動部413來昇降自如,可調整阻劑液噴嘴412的高度。 The arm 411 is freely movable on the rail 410 by the nozzle driving portion 413. Thereby, the resist liquid nozzle 412 can be moved from the standby portion 414 provided on the outer side in the positive direction of the Y direction of the wafer holding portion 401 to the wafer W above the wafer holding portion 401, and can be in the crystal The surface of the circle W moves in the radial direction of the wafer W. Further, the arm 411 is lifted and lowered by the nozzle driving unit 413, and the height of the resist liquid nozzle 412 can be adjusted.

在處理容器400內的頂面,晶圓保持部401的上方是 如圖24所示設有保持模板T的模板保持部420。亦即,晶圓保持部401與模板保持部420是以被載置於晶圓保持部401的晶圓W與被保持於模板保持部420的模板T會對向的方式配置。並且,模板保持部420是具有吸附保持模板T的背面T2的外周部之吸盤421。吸盤421是藉由設在該吸盤421的上方的移動機構422,在垂直方向移動自如,且繞著垂直軸旋轉自如。藉此,模板T可對晶圓保持部401上的晶圓W朝預定的方向旋轉昇降。 On the top surface of the processing container 400, above the wafer holding portion 401 is a template holding portion 420 provided with a holding template T as shown in Fig. 24 . In other words, the wafer holding portion 401 and the template holding portion 420 are disposed such that the wafer W placed on the wafer holding portion 401 and the template T held by the template holding portion 420 face each other. Further, the template holding portion 420 is a suction cup 421 having an outer peripheral portion that adsorbs and holds the back surface T 2 of the template T. The suction cup 421 is movably movable in the vertical direction by a moving mechanism 422 provided above the suction cup 421, and is rotatable about a vertical axis. Thereby, the template T can be rotated up and down in the predetermined direction on the wafer W on the wafer holding portion 401.

模板保持部420是具有設在吸盤421所保持的模板T的上方之光源423。從光源423是例如發出可視光、近紫外光、紫外線等的光,來自此光源423的光是透過模板T來照射至下方。 The template holding portion 420 is a light source 423 having a template T provided above the chuck 421. The light source 423 is, for example, light that emits visible light, near-ultraviolet light, ultraviolet light, or the like, and light from the light source 423 is irradiated to the lower side through the template T.

本實施形態的壓印系統300是如以上那樣構成。其次,說明有關在該壓印系統300進行的壓印處理。圖26是表示此壓印處理的主要處理流程,圖27是表示此壓印處理的各工程的模板T及晶圓W的狀態。 The imprint system 300 of this embodiment is configured as described above. Next, the imprint process performed on the imprint system 300 will be described. Fig. 26 is a view showing the main processing flow of the imprint process, and Fig. 27 is a view showing the state of the template T and the wafer W for each process of the imprint process.

首先,藉由模板搬送體12,從模板搬出入站2搬送模板T至模板處理站3(圖26的工程B1)。在模板處理站3是依序進行模板T的表面T1的洗淨(圖26的工程B2)、對表面T1之脫模劑S的塗佈(圖26的工程B3)、對脫模劑S之乙醇A的塗佈(圖26的工程B4)、對模板T上的脫模劑S之超音波振動的賦予(圖26的工程B5)、及脫模劑S的清洗(圖26的工程B6),在模板T的表面T1形成脫模膜SF。另外,該等工程B2~B6是與上述實施 形態的工程A2~A6同樣,因此省略詳細的說明。 First, the template transporting body 12 transports the template T from the template to the inbound station 2 to the template processing station 3 (item B1 of Fig. 26). 3 is performed sequentially washed template T T 1 as a surface (26 of the drawing B2) in the template processing stations, the coated surface of the release agent 1 S is T (FIG. 26 project B3), of the release agent The application of the ethanol A of S (the engineering B4 of FIG. 26), the ultrasonic vibration of the release agent S on the template T (the engineering B5 of FIG. 26), and the cleaning of the release agent S (the engineering of FIG. 26) B6), a release film S F is formed on the surface T 1 of the template T. Further, the above-described items B2 to B6 are the same as the items A2 to A6 of the above-described embodiment, and thus detailed description thereof will be omitted.

形成脫模膜SF的模板T是被搬送至轉移單元384。接著,模板T是藉由介面站321的模板搬送體381來搬送至反轉單元382,模板T的表背面會被反轉。亦即,模板T的背面T2會朝上方。然後,模板T會藉由模板搬送體381來搬送至壓印單元320,被吸附保持於模板保持部420的吸盤421(圖26的工程B7)。此時,在將模板T搬送至壓印單元320之前,亦可在緩衝卡匣383中暫時性地保管形成脫模膜SF的模板T。 The template T forming the release film S F is transferred to the transfer unit 384. Next, the template T is transported to the inversion unit 382 by the template transport body 381 of the interface station 321, and the front and back surfaces of the template T are reversed. That is, the back surface T 2 of the template T faces upward. Then, the template T is transported to the imprint unit 320 by the template transport body 381, and is sucked and held by the chuck 421 of the template holding unit 420 (item B7 of FIG. 26). In this case, the template T prior to the transfer nip unit 320, the template can temporarily keep the release film S F is formed in the buffer cassette 383 T.

如此在模板處理站3中對模板T進行預定的處理,在往壓印單元320搬送模板T中,在晶圓搬出入站330是藉由晶圓搬送體342來從卡匣載置台340上的晶圓卡匣CW取出晶圓W,搬送至晶圓處理站331的轉移單元351(圖26的工程B8)。另外,晶圓卡匣CW內的晶圓W是被收容成其被處理面會朝上方。 In the template processing station 3, the template T is subjected to predetermined processing, and in the template T being transported to the imprint unit 320, the wafer loading/unloading station 330 is transferred from the cassette mounting table 340 by the wafer transfer unit 342. The wafer cassette C W takes out the wafer W and transports it to the transfer unit 351 of the wafer processing station 331 (item B8 of Fig. 26). Further, the wafer W in the wafer cassette C W is housed so that the surface to be processed faces upward.

然後,藉由搬送單元350來搬送晶圓W至洗淨單元370,該晶圓W的表面(被處理面)會被洗淨(圖26的工程B9)。然後,晶圓W會被搬送至塗佈單元360,在晶圓W上塗佈密著劑(圖26的工程B10),更在晶圓W的密著劑上塗佈乙醇A(圖26的工程B11),然後在同塗佈單元360中,對晶圓W上的密著劑賦予超音波振動(圖26的工程B12)。如此一來,晶圓W的表面與密著劑的化學反應會被促進,該晶圓W的表面與密著劑的密著性會提升。然後,晶圓W會被搬送至清洗單元361,晶圓 W上的密著劑會被清洗(圖26的工程B13)。如此一來,像圖27(a)所示那樣,在晶圓W上形成預定的膜厚的密著膜BF。另外,在該等工程B9~B13是對晶圓W進行與在上述實施形態中對模板T進行的工程A2~A6同樣的處理,因此省略詳細的說明。 Then, the wafer W is transported to the cleaning unit 370 by the transport unit 350, and the surface (processed surface) of the wafer W is washed (item B9 of FIG. 26). Then, the wafer W is transferred to the coating unit 360, the adhesive is applied onto the wafer W (the engineering B10 of FIG. 26), and the ethanol A is applied to the adhesive of the wafer W (FIG. 26). In the same manner as in the coating unit 360, the ultrasonic wave is applied to the adhesive on the wafer W (the engineering B12 of Fig. 26). As a result, the chemical reaction between the surface of the wafer W and the adhesive is promoted, and the adhesion between the surface of the wafer W and the adhesive is increased. Then, the wafer W is transported to the cleaning unit 361, and the adhesive on the wafer W is cleaned (item B13 of Fig. 26). As a result, as shown in FIG. 27(a), a film B F of a predetermined film thickness is formed on the wafer W. Further, in the above-described processes B9 to B13, the same processing as the processes A2 to A6 performed on the template T in the above-described embodiment is performed on the wafer W, and thus detailed description thereof will be omitted.

形成密著膜BF的晶圓W是被搬送至轉移單元352。接著,晶圓W是藉由晶圓搬送體391來搬送至壓印單元320內(圖26的工程B14)。此時,在將晶圓W搬送至壓印單元320之前,亦可在緩衝卡匣392中暫時性地保管形成密著膜BF的晶圓W。 The wafer W on which the adhesion film B F is formed is transferred to the transfer unit 352. Next, the wafer W is transferred to the imprint unit 320 by the wafer transfer body 391 (item B14 of FIG. 26). At this time, before the wafer W is transported to the imprint unit 320, the wafer W on which the adhesion film B F is formed may be temporarily stored in the buffer cassette 392.

被搬入至壓印單元320的晶圓W是被交接至昇降銷402,載置於晶圓保持部401上保持。接著,使被保持於晶圓保持部401的晶圓W移動至水平方向的預定的位置而對位後,使阻劑液噴嘴412移動於晶圓W的徑方向,如圖27(b)所示在晶圓W的密著膜BF上塗佈阻劑液R(圖26的工程B15)。此時,藉由控制部160來控制從阻劑液噴嘴412供給的阻劑液R的供給時機或供給量等。亦即,在被形成於晶圓W上的阻劑圖案中,以對應於凸部的部分(對應於模板T的轉印圖案C的凹部的部分)所被塗佈的阻劑液R的量多,對應於凹部的部分(對應於轉印圖案C的凸部的部分)所被塗佈的阻劑液R的量少的方式塗佈。如此按照轉印圖案C的開口率,在晶圓W上塗佈阻劑液R。然後,晶圓W的表面與阻劑液R會藉由晶圓W上的密著膜BF來密著,如圖27(c)所示形成阻劑膜 RFThe wafer W carried into the imprint unit 320 is transferred to the lift pins 402 and placed on the wafer holding portion 401 for holding. Then, after the wafer W held by the wafer holding unit 401 is moved to a predetermined position in the horizontal direction and aligned, the resist liquid nozzle 412 is moved in the radial direction of the wafer W, as shown in FIG. 27(b). The resist liquid R is applied to the adhesion film B F of the wafer W (item B15 of Fig. 26). At this time, the control unit 160 controls the supply timing, the supply amount, and the like of the resist liquid R supplied from the resist liquid nozzle 412. That is, in the resist pattern formed on the wafer W, the amount of the resist liquid R coated with the portion corresponding to the convex portion (the portion corresponding to the concave portion of the transfer pattern C of the template T) is applied. In many cases, the portion corresponding to the concave portion (the portion corresponding to the convex portion of the transfer pattern C) is applied in such a manner that the amount of the resist liquid R to be applied is small. Thus, the resist liquid R is applied onto the wafer W in accordance with the aperture ratio of the transfer pattern C. Then, the surface of the wafer W and the resist liquid R are adhered by the adhesion film B F on the wafer W, and the resist film R F is formed as shown in Fig. 27 (c).

一旦在晶圓W上形成阻劑膜RF,則使被保持於晶圓保持部401的晶圓W移動至水平方向的預定的位置來進行對位,且使被保持於模板保持部420的模板T旋轉成預定的方向。然後,如圖27(c)的箭號所示,使模板T下降至晶圓W側。模板T會下降至預定的位置,模板T的表面T1會被推擠於晶圓W上的阻劑膜RF。另外,此預定的位置是根據晶圓W上所形成的阻劑圖案的高度來設定。接著,從光源423照射光。來自光源423的光是如圖27(d)所示透過模板T來照射至晶圓W上的阻劑膜RF,藉此阻劑膜RF會光致聚合。如此一來,模板T的轉印圖案C會被轉印至晶圓W上的阻劑膜RF,形成阻劑圖案P(圖26的工程B16)。 When the resist film R F is formed on the wafer W, the wafer W held by the wafer holding portion 401 is moved to a predetermined position in the horizontal direction to be aligned, and is held by the template holding portion 420. The template T is rotated into a predetermined direction. Then, as shown by the arrow of Fig. 27(c), the template T is lowered to the wafer W side. The template T is lowered to a predetermined position, and the surface T 1 of the template T is pushed onto the resist film R F on the wafer W. In addition, the predetermined position is set according to the height of the resist pattern formed on the wafer W. Next, light is irradiated from the light source 423. The light from the light source 423 is irradiated to the resist film R F on the wafer W through the template T as shown in Fig. 27 (d), whereby the resist film R F is photopolymerized. As a result, the transfer pattern C of the template T is transferred to the resist film R F on the wafer W to form a resist pattern P (item B16 of FIG. 26).

然後,如圖27(e)所示使模板T上昇,在晶圓W上形成阻劑圖案P。此時,由於在模板T的表面T1形成有脫模膜SF,因此不會有晶圓W上的阻劑附著於模板T的表面T1的情形。然後,晶圓W會藉由昇降銷402來交接至晶圓搬送體342,從壓印單元320搬送至晶圓搬出入站330,回到晶圓卡匣CW(圖26的工程B17)。另外,在晶圓W上所形成的阻劑圖案P的凹部,雖有時殘留有薄的阻劑殘留膜L,但亦可例如在壓印系統300的外部,如圖27(f)所示般除去該殘留膜L。 Then, as shown in FIG. 27(e), the template T is raised to form a resist pattern P on the wafer W. At this time, since the release film S F is formed on the surface T 1 of the template T, there is no possibility that the resist on the wafer W adheres to the surface T 1 of the template T. Then, the wafer W is transferred to the wafer transfer body 342 by the lift pins 402, transported from the imprint unit 320 to the wafer carry-in/out station 330, and returned to the wafer cassette C W (item B17 of FIG. 26). Further, although a thin resist residual film L may remain in the concave portion of the resist pattern P formed on the wafer W, it may be, for example, outside the imprint system 300 as shown in Fig. 27(f). The residual film L is removed as usual.

重複進行以上的工程B8~B17,利用一模板T,在複數的晶圓W上分別形成阻劑圖案P。期間,重複進行上述 的工程B1~B6,在複數的模板T的表面T1上形成脫模膜SF。形成脫模膜SF的模板T是被保管於介面站321的緩衝卡匣383。 The above-described processes B8 to B17 are repeated, and a resist pattern P is formed on each of the plurality of wafers W by using a template T. During the period, the above-described processes B1 to B6 are repeated, and a release film S F is formed on the surface T 1 of the plurality of templates T. The template T forming the release film S F is a buffer cassette 383 stored in the interface station 321 .

然後,若對預定片數的晶圓W進行工程B8~B17,則使用完畢的模板T會藉由模板搬送體381來從壓印單元320搬出,搬送至反轉單元382(圖26的工程B18)。接著,緩衝卡匣383內的模板T會藉由模板搬送體381來搬送至壓印單元320。如此一來,壓印單元320內的模板T會被更換。另外,更換模板T的時機是考慮模板T的劣化等來設定。並且,在晶圓W形成不同的阻劑圖案P時,模板T也會被更換。而且,亦可例如在每使用模板T一次就更換該模板T。又,亦可例如在每一片的晶圓W更換模板T,或例如每一批更換模板T。 Then, when the predetermined number of wafers W are subjected to the works B8 to B17, the used template T is carried out from the imprinting unit 320 by the template transporting body 381, and is transported to the reversing unit 382 (engineering B18 of Fig. 26). ). Next, the template T in the buffer cassette 383 is transported to the imprint unit 320 by the template transport body 381. As a result, the template T in the imprint unit 320 is replaced. Further, the timing of replacing the template T is set in consideration of deterioration of the template T or the like. Also, when the wafer W forms a different resist pattern P, the template T is also replaced. Moreover, the template T can also be replaced, for example, every time the template T is used. Also, for example, the template T may be replaced at each wafer W, or for example, each batch may be replaced.

被搬送至反轉單元382的使用完畢的模板T是其表背面會被反轉。然後,模板T會藉由模板搬送體381、搬送單元20、模板搬送體12來回到模板卡匣CT。如此,在壓印系統300中,一邊連續性地更換模板T,一邊對複數的晶圓W連續性地形成預定的阻劑圖案P。 The used template T conveyed to the inverting unit 382 is inverted on the front and back sides. Then, the template T is returned to the template cassette C T by the template transport body 381, the transport unit 20, and the template transport body 12. As described above, in the imprint system 300, the predetermined resist pattern P is continuously formed on the plurality of wafers W while continuously replacing the template T.

若根據以上的實施形態,則在晶圓處理裝置310中,因為對塗佈密著劑的晶圓W上的密著劑賦予超音波振動,所以可促進晶圓W的表面與密著劑的化學反應,該晶圓W的表面與密著劑的密著性會提升。亦即,可使密著劑短時間密著於晶圓W的表面。藉此,可使晶圓處理的處理能力提升。 According to the above embodiment, in the wafer processing apparatus 310, since the ultrasonic wave is applied to the adhesive on the wafer W to which the adhesive is applied, the surface of the wafer W and the adhesive can be promoted. In the chemical reaction, the adhesion of the surface of the wafer W to the adhesive is increased. That is, the adhesive can be adhered to the surface of the wafer W for a short time. Thereby, the processing capability of the wafer processing can be improved.

又,由於壓印系統300具有模板處理裝置1及晶圓處理裝置310,因此在壓印系統300中,可在模板T上形成脫模膜SF,且在晶圓W上形成密著膜BF。由於如此在一壓印系統300進行模板處理及晶圓處理,因此可使壓印處理的處理能力提升。並且,藉此亦可實現半導體裝置的量產化。 Moreover, since the imprint system 300 has the template processing apparatus 1 and the wafer processing apparatus 310, in the imprint system 300, the release film S F can be formed on the template T, and the adhesion film B can be formed on the wafer W. F. Since the stencil processing and the wafer processing are performed in one imprint system 300 as described above, the processing capability of the imprint processing can be improved. Further, mass production of the semiconductor device can be achieved by this.

以上,一邊參照附圖,一邊說明有關本發明的較佳實施形態,但本發明並非限於該例。只要是該當業者便可在申請專利範圍所記載的技術思想範圍內想到各種的變更例或修正例,該等當然屬於本發明的技術範圍。本發明並非限於此例,亦可採用各種的型態。本發明是亦可適用於基板為晶圓以外的FPD(平板顯示器)、光罩用的光掩膜等其他的基板時。 The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the invention is not limited thereto. As long as the person skilled in the art can think of various modifications and modifications within the scope of the technical idea described in the patent application, these are of course within the technical scope of the present invention. The present invention is not limited to this example, and various types can also be employed. The present invention is also applicable to a case where the substrate is an FPD (flat panel display) other than the wafer, or another substrate such as a photomask for a photomask.

1‧‧‧模板處理裝置 1‧‧‧Template processing device

30、32‧‧‧塗佈單元 30, 32‧‧‧ Coating unit

102‧‧‧模板移動機構 102‧‧‧Template moving mechanism

110‧‧‧超音波振動子 110‧‧‧Supersonic vibrator

111‧‧‧振動子移動機構 111‧‧‧ vibrator moving mechanism

123‧‧‧脫模劑噴嘴 123‧‧‧Release nozzle

130‧‧‧乙醇噴嘴 130‧‧‧Ethanol nozzle

160‧‧‧控制部 160‧‧‧Control Department

200‧‧‧混合液噴嘴 200‧‧‧ mixed liquid nozzle

210‧‧‧支持板 210‧‧‧Support board

250‧‧‧塗佈單元 250‧‧‧ Coating unit

300‧‧‧壓印系統 300‧‧‧ Imprinting system

310‧‧‧晶圓處理裝置 310‧‧‧ Wafer Processing Unit

360、362‧‧‧塗佈單元 360, 362‧‧‧ coating unit

A‧‧‧乙醇 A‧‧‧Ethanol

BF‧‧‧密著膜 B F ‧‧‧ Cover film

C‧‧‧轉印圖案 C‧‧·Transfer pattern

S‧‧‧脫模劑 S‧‧‧Release

SF‧‧‧脫模膜 S F ‧‧‧ release film

T‧‧‧模板 T‧‧‧ template

W‧‧‧晶圓 W‧‧‧ wafer

圖1是表示本實施形態之具備塗佈單元的模板處理裝置的構成的概略的平面圖。 FIG. 1 is a plan view showing a schematic configuration of a template processing apparatus including a coating unit according to the embodiment.

圖2是表示本實施形態之模板處理裝置的構成的概略的側面圖。 Fig. 2 is a side view showing the outline of a configuration of a template processing apparatus according to the embodiment.

圖3是表示本實施形態之模板處理裝置的構成的概略的側面圖。 Fig. 3 is a side view showing the outline of a configuration of a template processing apparatus according to the embodiment.

圖4是模板的斜視圖。 Figure 4 is a perspective view of the template.

圖5是表示塗佈單元的構成的概略的縱剖面圖。 Fig. 5 is a schematic longitudinal cross-sectional view showing a configuration of a coating unit.

圖6是表示塗佈單元的構成的概略的橫剖面圖。 Fig. 6 is a schematic cross-sectional view showing a configuration of a coating unit.

圖7是表示清洗單元的構成的概略的縱剖面圖。 Fig. 7 is a schematic longitudinal cross-sectional view showing a configuration of a washing unit.

圖8是表示洗淨單元的構成的概略的縱剖面圖。 8 is a schematic longitudinal cross-sectional view showing a configuration of a cleaning unit.

圖9是表示洗淨單元的構成的概略的橫剖面圖。 Fig. 9 is a schematic cross-sectional view showing the configuration of a cleaning unit.

圖10是表示模板處理的各工程的流程圖。 Fig. 10 is a flow chart showing each project of the template processing.

圖11是模式性地表示模板處理的各工程之模板的狀態的說明圖,(a)是表示洗淨模板的表面的情況,(b)是表示在模板的表面塗佈脫模劑的情況,(c)是表示在模板的脫模膜上塗佈乙醇的情況,(d)是表示對模板賦予超音波振動的情況,(e)是在模板上形成脫模膜的情況。 FIG. 11 is an explanatory view schematically showing a state of a template of each process of the template processing, wherein (a) shows a case where the surface of the template is washed, and (b) shows a case where a release agent is applied to the surface of the template. (c) is a case where ethanol is applied to the release film of the template, (d) is a case where ultrasonic vibration is applied to the template, and (e) is a case where a release film is formed on the template.

圖12是模式性地表示模板上的脫模劑與乙醇的舉動的說明圖,(a)是表示在脫模劑上供給乙醇的情況,(b)是表示脫模劑的官能基萎縮的情況,(c)是表示脫模劑的官能基伸長的情況,(d)是表示乙醇進入脫模劑與模板的表面之間的情況。 FIG. 12 is an explanatory view schematically showing the behavior of the release agent and the ethanol on the template, wherein (a) shows the case where ethanol is supplied to the release agent, and (b) shows the case where the functional group of the release agent shrinks. (c) is a case where the functional group of the release agent is elongated, and (d) is a case where ethanol enters between the release agent and the surface of the template.

圖13是表示模板的表面與脫模劑分子脫水縮合的情況的說明圖。 Fig. 13 is an explanatory view showing a state in which the surface of the template is dehydrated and condensed with a releasing agent molecule.

圖14是表示模板的表面與脫模劑分子結合的情況的說明圖。 Fig. 14 is an explanatory view showing a state in which the surface of the template is bonded to a release agent molecule.

圖15是表示其他的實施形態之塗佈單元的構成的概略的縱剖面圖。 Fig. 15 is a longitudinal cross-sectional view showing the outline of a configuration of a coating unit according to another embodiment.

圖16是表示其他的實施形態之塗佈單元的構成的概略的縱剖面圖。 Fig. 16 is a longitudinal cross-sectional view showing the outline of a configuration of a coating unit according to another embodiment.

圖17是表示其他的實施形態之塗佈單元的構成的概 略的縱剖面圖。 Fig. 17 is a view showing the configuration of a coating unit according to another embodiment; A slightly longitudinal section.

圖18是表示其他的實施形態之塗佈單元的構成的概略的縱剖面圖。 Fig. 18 is a longitudinal cross-sectional view showing the outline of a configuration of a coating unit according to another embodiment.

圖19是表示保持構件的構成的概略的平面圖。 19 is a plan view showing the outline of a configuration of a holding member.

圖20是表示其他的實施形態之塗佈單元的構成的概略的縱剖面圖。 Fig. 20 is a longitudinal cross-sectional view showing the outline of a configuration of a coating unit according to another embodiment.

圖21是表示壓印系統的構成的概略的平面圖。 21 is a plan view showing the outline of a configuration of an imprint system.

圖22是表示壓印系統的構成的概略的側面圖。 Fig. 22 is a side view showing the outline of the configuration of the imprint system.

圖23是表示壓印系統的構成的概略的側面圖。 Fig. 23 is a side view showing the outline of the configuration of the imprint system.

圖24是表示壓印單元的構成的概略的縱剖面圖。 Fig. 24 is a longitudinal cross-sectional view showing the outline of a configuration of an imprint unit.

圖25是表示壓印單元的構成的概略的橫剖面圖。 Fig. 25 is a schematic cross-sectional view showing the configuration of an imprint unit.

圖26是表示壓印處理的各工程的流程圖。 Fig. 26 is a flow chart showing each item of the imprint process.

圖27是模式性地表示壓印處理的各工程的模板與晶圓的狀態的說明圖,(a)是表示在晶圓上形成密著膜的情況,(b)是表示在晶圓的密著膜上塗佈阻劑液的情況,(c)是表示在晶圓上形成阻劑膜的情況,(d)是表示使晶圓上的阻劑膜光致聚合的情況,(e)是表示在晶圓上形成有阻劑圖案的情況,(f)是表示除去晶圓上的殘留膜的情況。 Fig. 27 is an explanatory view schematically showing a state of a template and a wafer in each process of the imprint process, wherein (a) shows a case where an adhesive film is formed on a wafer, and (b) shows a state in which a wafer is dense. When the resist liquid is applied to the film, (c) is a case where a resist film is formed on the wafer, (d) is a photopolymerization of the resist film on the wafer, and (e) is The case where the resist pattern is formed on the wafer is shown, and (f) shows the case where the residual film on the wafer is removed.

A‧‧‧乙醇 A‧‧‧Ethanol

C‧‧‧轉印圖案 C‧‧·Transfer pattern

S‧‧‧脫模劑 S‧‧‧Release

SF‧‧‧脫模膜 S F ‧‧‧ release film

T‧‧‧模板 T‧‧‧ template

Claims (23)

一種成膜方法,係於基板上將矽烷耦合劑成膜的成膜方法,其特徵係具有:供給工程,其係對基板上供給矽烷耦合劑;及成膜工程,其係對在上述供給工程被供給至基板上的矽烷耦合劑賦予超音波振動,在該基板上形成矽烷耦合劑的膜。 A film forming method is a film forming method for forming a decane coupling agent on a substrate, characterized in that: a supply engineering, which supplies a decane coupling agent to a substrate; and a film forming process, which is in the above supply engineering The decane coupling agent supplied to the substrate imparts ultrasonic vibration, and a film of a decane coupling agent is formed on the substrate. 如申請專利範圍第1項之成膜方法,其中,在上述成膜工程中,對上述基板上的矽烷耦合劑供給使基板的表面與矽烷耦合劑的反應促進的反應促進劑,且對被供給該反應促進劑的矽烷耦合劑賦予上述超音波振動。 The film forming method according to the first aspect of the invention, wherein in the film forming process, a reaction accelerator for promoting a reaction between a surface of the substrate and a decane coupling agent is supplied to the decane coupling agent on the substrate, and is supplied The decane coupling agent of the reaction accelerator imparts the above-described ultrasonic vibration. 如申請專利範圍第2項之成膜方法,其中,在上述成膜工程中,上述反應促進劑的供給係於上述基板上的矽烷耦合劑乾燥之前進行。 The film forming method of claim 2, wherein in the film forming process, the supply of the reaction accelerator is performed before drying the decane coupling agent on the substrate. 如申請專利範圍第2或3項之成膜方法,其中,在上述成膜工程中,與上述基板上的矽烷耦合劑對向配置支持板,使上述反應促進劑擴散於上述矽烷耦合劑與上述支持板之間。 The film forming method of claim 2, wherein in the film forming process, a support plate is disposed opposite to the decane coupling agent on the substrate, and the reaction accelerator is diffused to the decane coupling agent and Support between boards. 如申請專利範圍第2或3項之成膜方法,其中,在上述成膜工程中,使基板移動,而令上述反應促進劑擴散於上述基板上的矽烷耦合劑上。 The film forming method according to claim 2, wherein in the film forming process, the substrate is moved to spread the reaction accelerator on the silane coupling agent on the substrate. 如申請專利範圍第2~5項中的任一項所記載之成膜方法,其中,在上述成膜工程中,對上述基板上的矽烷耦合劑供給上述反應促進劑時,供給該反應促進劑與上述 矽烷耦合劑的溶劑的混合液。 The film forming method according to any one of the above-mentioned invention, wherein the reaction accelerator is supplied to the decane coupling agent on the substrate when the reaction accelerator is supplied to the substrate. With the above A mixture of solvents for decane coupling agents. 如申請專利範圍第2~6項中的任一項所記載之成膜方法,其中,上述反應促進劑為乙醇。 The film forming method according to any one of claims 2 to 6, wherein the reaction accelerator is ethanol. 如申請專利範圍第1~7項中的任一項所記載之成膜方法,其中,在上述成膜工程中,在與基板表面垂直的方向賦予上述超音波振動。 The film forming method according to any one of claims 1 to 7, wherein in the film forming process, the ultrasonic vibration is applied in a direction perpendicular to a surface of the substrate. 如申請專利範圍第1~8項中的任一項所記載之成膜方法,其中,在上述成膜工程中,使賦予上述超音波振動的超音波振動子或上述基板相對地移動。 The film forming method according to any one of the first to eighth aspects of the present invention, wherein in the film forming process, the ultrasonic vibrator or the substrate to which the ultrasonic vibration is applied is relatively moved. 如申請專利範圍第1~9項中的任一項所記載之成膜方法,其中,在上述供給工程中,對基板上供給液體狀或氣體狀的矽烷耦合劑。 The film forming method according to any one of claims 1 to 9, wherein in the supply process, a liquid or gaseous decane coupling agent is supplied to the substrate. 如申請專利範圍第1~10項中的任一項所記載之成膜方法,其中,上述基板係於表面形成有預定的圖案之模板,上述矽烷耦合劑為脫模劑。 The film forming method according to any one of claims 1 to 10, wherein the substrate is a template in which a predetermined pattern is formed on the surface, and the decane coupling agent is a release agent. 一種程式,係為了藉由成膜裝置來使如申請專利範圍第1~11項中的任一項所記載之成膜方法實行,而在控制該成膜裝置的控制部的電腦上動作之程式。 A program for operating a computer controlled by a control unit of the film forming apparatus by performing a film forming method according to any one of claims 1 to 11 by a film forming apparatus. . 一種可讀取的電腦記憶媒體,係儲存如申請專利範圍第12項所記載的程式。 A readable computer memory medium storing the program as described in item 12 of the patent application. 一種成膜裝置,係於基板上將矽烷耦合劑成膜的成膜裝置,其特徵係具有:矽烷耦合劑供給部,其係對基板上供給矽烷耦合劑;及 超音波振動子,其係對從上述矽烷耦合劑供給部供給至基板上的矽烷耦合劑賦予超音波振動。 A film forming apparatus is a film forming apparatus for forming a decane coupling agent on a substrate, characterized by: a decane coupling agent supply unit that supplies a decane coupling agent to the substrate; The ultrasonic vibrator imparts ultrasonic vibration to the decane coupling agent supplied from the decane coupling agent supply unit to the substrate. 如申請專利範圍第14項之成膜裝置,其中,具有反應促進劑供給部,其係對從上述矽烷耦合劑供給部供給至基板上的矽烷耦合劑供給使基板的表面與矽烷耦合劑的反應促進的反應促進劑。 The film forming apparatus of claim 14, comprising a reaction accelerator supply unit that supplies a surface of the substrate to the decane coupling agent by supplying a decane coupling agent supplied from the decane coupling agent supply unit to the substrate. Promoted reaction promoter. 如申請專利範圍第15項之成膜裝置,其中,具有支持板,其係與上述基板上的矽烷耦合劑對向配置,在與該矽烷耦合劑之間使上述反應促進劑擴散。 The film forming apparatus of claim 15, comprising a support plate disposed opposite to the decane coupling agent on the substrate, and diffusing the reaction accelerator between the decane coupling agent and the silane coupling agent. 如申請專利範圍第15或16項之成膜裝置,其中,上述反應促進劑供給部係供給上述反應促進劑與上述矽烷耦合劑的溶劑的混合液。 The film forming apparatus according to claim 15 or 16, wherein the reaction accelerator supply unit supplies a mixed liquid of the reaction accelerator and the solvent of the decane coupling agent. 如申請專利範圍第15~17項中的任一項所記載之成膜裝置,其中,上述反應促進劑為乙醇。 The film forming apparatus according to any one of claims 15 to 17, wherein the reaction accelerator is ethanol. 如申請專利範圍第14~18項中的任一項所記載之成膜裝置,其中,上述超音波振動子係在與基板表面垂直的方向賦予上述超音波振動。 The film forming apparatus according to any one of claims 14 to 18, wherein the ultrasonic vibrator is provided with the ultrasonic vibration in a direction perpendicular to a surface of the substrate. 如申請專利範圍第14~19項中的任一項所記載之成膜裝置,其中,具有使上述基板移動的基板移動機構。 The film forming apparatus according to any one of claims 14 to 19, further comprising a substrate moving mechanism that moves the substrate. 如申請專利範圍第14~20項中的任一項所記載之成膜裝置,其中,具有使上述超音波振動子移動的振動子移動機構。 The film forming apparatus according to any one of claims 14 to 20, further comprising a vibrator moving mechanism that moves the ultrasonic vibrator. 如申請專利範圍第14~21項中的任一項所記載之成膜裝置,其中,上述矽烷耦合劑供給部係對基板上供給 液體狀或氣體狀的矽烷耦合劑。 The film forming apparatus according to any one of claims 14 to 21, wherein the decane coupling agent supply unit supplies the substrate A liquid or gaseous decane coupling agent. 如申請專利範圍第14~22項中的任一項所記載之成膜裝置,其中,上述基板係於表面形成有預定的圖案之模板,上述矽烷耦合劑為脫模劑。 The film forming apparatus according to any one of claims 14 to 22, wherein the substrate is a template in which a predetermined pattern is formed on the surface, and the decane coupling agent is a release agent.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI665103B (en) * 2015-03-31 2019-07-11 日商芝浦機械電子裝置股份有限公司 Stencil manufacturing device for embossing

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160022825A (en) * 2013-06-20 2016-03-02 에베 그룹 에. 탈너 게엠베하 Mould with a mould pattern, and device and method for producing same
JP6316768B2 (en) * 2015-03-26 2018-04-25 東京エレクトロン株式会社 Adhesion layer forming method, adhesion layer forming system, and storage medium
JP2020043160A (en) 2018-09-07 2020-03-19 キオクシア株式会社 Imprint apparatus, imprint method, and semiconductor device manufacturing method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3902699B2 (en) * 1997-12-04 2007-04-11 クラリアント インターナショナル リミティド Coating composition and method for producing silica-based ceramic film
JP2004311713A (en) * 2003-04-07 2004-11-04 Mitsubishi Electric Corp Mold for producing semiconductor device
JP2008174411A (en) * 2007-01-17 2008-07-31 Shinshu Univ Method for producing hydrophobilized silica film
SG150405A1 (en) * 2007-08-29 2009-03-30 Agency Science Tech & Res Method of coating a particle
JP4561871B2 (en) * 2008-05-15 2010-10-13 セイコーエプソン株式会社 Manufacturing method of liquid crystal device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI665103B (en) * 2015-03-31 2019-07-11 日商芝浦機械電子裝置股份有限公司 Stencil manufacturing device for embossing
US10668496B2 (en) 2015-03-31 2020-06-02 Shibaura Mechatronics Corporation Imprint template treatment apparatus

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