TW201305080A - IR reflective coating with high reliability, energy-saving glass device and method of producing the coating thereof - Google Patents

Abstract

This invention provides an IR reflective coating with high reliability formed on a transparent substrate. The IR reflective coating comprises: a buffering layer formed on the transparent substrate and a first metal base film layer structure formed on the buffering layer. The first metal base film layer structure sequentially comprises, from the buffering layer towards the direction distal from the transparent substrate, a first metal layer, a second metal layer, and a third metal layer. The first metal layer is made of Ag; the second metal layer is made of a second metal selected from the group consisting of Zn, Sn, Ti, Ni, ZnSn alloy, ZnTi alloy, ZnNi alloy, SnTi alloy and SnNi alloy. The third metal layer of the first metal base film layer structure is a barrier layer. This invention also provides an energy-saving glass device and a method of producing the coating mentioned above.

Description

Infrared reflective coating, energy-saving glass device and coating method thereof

The present invention relates to an infrared reflection coating, and more particularly to an infrared reflective coating, a low-emissivity glass unit, and a method for producing the same.

The infrared reflective coating has the function of providing visible light transmission and blocking infrared penetration. When in the winter season, the infrared reflective coating can limit the body heat generated by the indoor human body to the indoor environment to maintain the indoor temperature at room temperature. On the contrary, when the air conditioning equipment is used in the summer to maintain the room temperature, the infrared reflective coating can block the penetration of external infrared rays, avoiding the penetration of the external radiant heat energy, resulting in high indoor temperature and borrowing. This saves the electricity consumed by the air conditioning equipment. Therefore, the infrared reflective coating is generally plated on a transparent glass substrate for use as an energy-saving glass.

Referring to Fig. 1, US 7,906,203 B2 discloses an infrared reflective coating 1 formed on a glass substrate 11. The infrared reflective coating 1 includes a transparent dielectric layer 12 formed on one surface 110 of the glass substrate 11, and a three infrared reflective film 13. Each of the infrared reflecting films 13 has an infrared reflecting layer 131 made of a highly conductive metal material such as Ag, Cu or Au, in order from the transparent dielectric layer 12 away from the glass substrate 11. A blocker layer 132 and a transparent dielectric layer 133.

The transparent dielectric layer 133 may be composed of a single layer of oxide, or may be composed of three, five or seven different oxides (eg, ZnO and SnO ₂ ), the main purpose of which is to enhance visible light. Transmittance.

The barrier layers 132 may be made of a metal material such as Ti, Ni, Cr, NiCr, or Nb. Since the oxygen (O ₂ ) is introduced into the reaction chamber to plate the oxide when the transparent dielectric layer 133 is plated; therefore, the main purpose of the barrier layer 132 is to block oxygen and Ag or Cu. The metal material generates an oxidation reaction and maintains the reliability of the entire infrared reflective coating film 1. Although the infrared transmittance of the infrared reflective coating 1 can be reduced to about 1.5%; however, the infrared reflective coating 1 still requires the use of an oxide; therefore, its overall reliability still inevitably destroys oxygen.

As apparent from the above description, improving the oxidation problem of the infrared reflective coating and thereby improving the reliability of the infrared reflective coating is an improvement problem in the technical field.

Accordingly, it is an object of the present invention to provide an infrared reflective coating which is highly reliable.

Another object of the invention is to provide an energy efficient glass unit.

Another object of the present invention is to provide a method for producing an infrared reflective coating which is highly reliable.

Therefore, the infrared reflective coating film of the present invention is formed on a light-transmissive substrate. The infrared reflective coating comprises: a buffer layer formed on the transparent substrate, and a first metal-based film structure formed on the buffer layer. The first metal base film layer structure has a first metal layer, a second metal layer and a third metal layer sequentially from the buffer layer away from the transparent substrate. The first metal layer of the first metal base film layer structure is made of Ag. The second metal layer of the first metal base film layer structure is made of a second metal selected from the group consisting of Zn, Sn, Ti, Ni, ZnSn alloy, ZnTi alloy, ZnNi alloy, SnTi Alloy, and SnNi alloy. The third metal layer of the first metal base film layer structure is a barrier layer.

In addition, the energy-saving glass device of the present invention comprises: a first component, a second component, and a spacer. The first component has a transparent substrate, and a highly reliable infrared reflective coating formed on the transparent substrate as described above. The second component has another transparent substrate, and the other transparent substrate faces the first transparent substrate and is spaced apart from the first transparent substrate. The spacer is interposed between the first component and the second component and defines a closed space together with the first component and the second component.

Moreover, the method for producing an infrared reflective coating film which is highly reliable according to the present invention is formed on a light-transmissive substrate. The production method includes the following steps:

(a) forming a buffer layer on the transparent substrate;

(b) forming a first metal base film layer structure on the buffer layer, the first metal base film layer structure sequentially has a first metal layer and a second from the buffer layer away from the transparent substrate a metal layer and a third metal layer;

(c) after the step (b), the transparent substrate on which the buffer layer and the first metal base film layer are formed is disposed on a substrate of a vacuum chamber to the buffer layer and the first a metal base film layer structure is subjected to microwave plasma treatment, and the adhesion of the buffer layer and the first metal base film layer structure is improved;

Wherein the first metal layer of the first metal base film layer structure is made of Ag; wherein the second metal layer of the first metal base film layer structure is a group selected from the group consisting of The second metal is made of: Zn, Sn, Ti, Ni, ZnSn alloy, ZnTi alloy, ZnNi alloy, SnTi alloy, and SnNi alloy; wherein the third metal layer of the first metal base film layer is a barrier layer And wherein the substrate of the step (c) is made of a material selected from the group consisting of carbon fiber, graphite, and semiconductor materials.

The invention has the effect of improving the transmittance of visible light by the second metal layer of the first metal base film layer structure, thereby avoiding the oxidation problem caused by the conventional transparent dielectric layer, thereby improving the reliability of the infrared reflective coating film. Sex.

<Detailed Description of the Invention>

The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments of the present invention.

Before the present invention is described in detail, it is noted that in the following description, similar elements are denoted by the same reference numerals.

Referring to FIG. 2, a first preferred embodiment of the highly reliable infrared reflective coating 20 of the present invention is formed on a transparent substrate 2. The first preferred embodiment of the infrared reflective coating 20 includes a buffer layer 3 formed on the transparent substrate 2, and a first metal base film layer structure 4 formed on the buffer layer 3. The first metal base film layer structure 4 has a first metal layer 41 , a second metal layer 42 and a third metal layer 43 in this order from the buffer layer 3 away from the transparent substrate 2 .

The first metal layer 41 of the first metal base film layer structure 4 is made of Ag. The second metal layer 42 of the first metal base film layer structure 4 is made of a second metal selected from the group consisting of Zn, Sn, Ti, Ni, ZnSn alloy, ZnTi alloy, ZnNi alloy. , SnTi alloy, and SnNi alloy. The third metal layer 43 of the first metal base film layer structure 4 is a barrier layer.

Preferably, the third metal layer 43 of the first metal base film layer structure 4 is made of a third metal selected from the group consisting of Al, AlTi alloy, AlNi alloy, and AlZn alloy; The buffer layer 3 is made of a material selected from the group consisting of Zn, ZnO, SnO ₂ , and TiO ₂ . It should be noted that the main purpose of the buffer layer 3 is to improve the adhesion between the transparent substrate 2 and the first metal layer 42 of the first metal base film layer structure 4, and to enhance visible light. The penetration rate.

It is also worth mentioning that the present invention mainly utilizes the second metal layer 42 and the third metal layer 43 in the first metal base film layer structure 4 to replace the conventional metal barrier layer and the oxide transparent dielectric layer. Further, it is avoided that the coating film quality and reliability are affected by the generation of oxides in the infrared ray reflection film 20 of the present invention.

The main function of the second metal layer 42 of the first metal base film layer structure 4 of the present invention is to adjust the transmittance of visible light. In a specific example, the second metal layer 42 of the first metal base film layer structure 4 is made of Zn, wherein the main reason for selecting Zn is that it is required for performing magnetron sputtering. The output power is low and the sputtering rate is high, so the manufacturing cost is low.

The main function of the third metal layer 43 of the first metal base film layer structure 4 is to block the diffusion of moisture and oxygen to avoid moisture, oxygen and the first metal base film layer structure. Oxidation reaction occurs and affects its reliability. In a specific example, the third metal layer 43 of the first metal base film layer structure 4 is made of an AlTi alloy; wherein the AlTi alloy is selected because it provides sufficient mechanical strength [eg, hardness). ] and adjust the transmittance of visible light. It is worth mentioning that, under the condition that the visible light transmittance is not affected, the present invention further forms a top layer on the third metal layer 43 of the first metal base film layer structure 4 according to requirements. ). For example, an oxide, a carbide or a nitride of various colors having a thickness of 100 nm or more is prepared by using a sol-gel method to coat the first metal base film layer structure 4 The third metal layer 43 is used to achieve the advantages of rich color and improved wear resistance and oxidation resistance of the overall structure, and achieve the purpose of using a single piece of glass.

In order to effectively block the light source in the infrared band and penetrate the light source in the visible light band, preferably, the thickness of the first metal layer 41 of the first metal base film layer structure 4 is between 14 nm and 32 nm. The thickness of the second metal layer 42 of the first metal base film layer structure 4 is between 10 nm and 35 nm; the thickness of the third metal layer 43 of the first metal base film layer structure 4 is between 3 Between nm and 20 nm.

Referring to FIG. 3 and FIG. 4, a method for fabricating the highly reliable infrared reflective coating 20 of the first preferred embodiment of the present invention is formed on the transparent substrate 2. The manufacturing method of the first preferred embodiment comprises the following steps:

(a) forming the buffer layer 3 on the transparent substrate 2;

(b) forming the first metal base film layer structure 4 on the buffer layer 3, the first metal base film layer structure 4 having the first metal sequentially from the buffer layer 3 away from the transparent substrate 2 a layer 41, the second metal layer 42 and the third metal layer 43;

(c) after the step (b), the transparent substrate 2 on which the buffer layer 3 and the first metal base film layer structure 4 are formed is disposed on a substrate 92 of a vacuum chamber 91 to The buffer layer 3 and the first metal base film layer structure 4 are subjected to microwave plasma treatment, and the adhesion of the buffer layer 3 and the first metal base film layer structure 4 is improved.

Wherein, the substrate 92 of the step (c) is made of a material selected from the group consisting of carbon fiber, graphite and semiconductor materials.

A semiconductor material suitable for use in the present invention is bismuth (Si). Materials such as carbon fibers, graphite, and ruthenium have high thermal conductivity; in addition, these materials have good absorptivity for microwave MW. Therefore, the microwave MW can be quickly converted into high-temperature heat energy H. The manufacturing method of the first preferred embodiment of the present invention is mainly characterized in that carbon fiber, graphite and a semiconductor material are provided with a rapid absorption of microwave MW to convert the absorbed microwave MW into thermal energy H, and rapidly disperse and transfer heat energy H and the like. So that the microwave MW is quickly absorbed by the substrate 92 and converted into thermal energy H, and rapidly dispersed by the substrate 92 to transfer thermal energy H to the buffer layer 3 and the first metal-based film layer structure on the transparent substrate 2. 4. Thereby, the microwave MW rapidly absorbs the converted thermal energy through the substrate 92, and provides good atoms between the three interfaces of the transparent substrate 2, the buffer layer 3 and the first metal base film layer structure 4. Interdiffusion and rapid microwave thermal sintering (sintering), thereby improving the adhesion between the three.

In order to enable the microwave MW to be effectively dispersed and transmitted to the buffer layer 3 and the first metal base film layer structure 4, preferably, the area of the substrate 92 is greater than or equal to the light-transmitting substrate 2 when viewed in a plan view. The area of the buffer layer 3 is greater than or equal to the area of the first metal base film layer structure 4, and the area of the substrate 92 overlaps with the area of the buffer layer 3 on the transparent substrate 2, and is combined with the first metal base. The areas of the film structure 4 overlap each other.

It should be noted here that when the working pressure is small (for example, 0.05 Torr), the vacuum chamber 91 is required to generate microwave plasma for a longer period of time (ie, it is less prone to generate microwave plasma); When the working pressure is larger (for example, 5 Torr), the vacuum chamber 91 is more likely to generate microwave plasma. In addition, in order to avoid the problem that the vacuum chamber 91 is oxidized due to being under normal pressure, the vacuum chamber 91 is preferably subjected to the step (c). The working pressure is 0.5 Torr or less.

Preferably, the microwave plasma treatment of the step (c) is to provide an output power between 750 W and 2000 W via a power supply. It should also be noted that the output power provided by the power supply is mainly related to the speed of generating the microwave plasma; in other words, the higher the output power, the faster the generation of the microwave plasma; in addition, as explained in the above paragraph It can be understood that the lower the working pressure is, the more difficult it is to generate microwave plasma, and the working pressure is mainly related to the pumping capacity of the pumping system (eg, pump), and therefore, it is suitable for the vacuum chamber of step (c) of the present invention. The lower limit of the working pressure of the body 91 depends on the pumping capacity of the pumping system, and is suitable for the step (c) of the present invention as long as the working pressure of the vacuum chamber 91 can be lowered to a high vacuum state. However, it should be noted that when the vacuum chamber 91 of the step (c) is in a high vacuum state, the output power provided by the vacuum chamber 91 does not need to be relatively increased, or the time required for the step (c) needs to be relatively extended. To achieve the purpose of improving the hydrophobicity of the surface.

Preferably, the plasma source of the microwave plasma treatment of the step (c) is nitrogen (N ₂ ), argon (Ar), or acetylene (C ₂ H ₂ ).

The third metal layer 43 of the first metal base film layer structure 4 of the first preferred embodiment of the present invention is preferably made of a third metal selected from the group consisting of the following. Al, AlTi alloy, AlNi alloy, and AlZn alloy; therefore, a surface of the third metal layer 43 of the first metal base film structure 4 is hydrophobic after a predetermined time after microwave plasma treatment (hydrophobic Property). It should be noted here that the predetermined time is defined in the present invention to be 30 minutes or more.

Referring to FIG. 5, a second preferred embodiment of the highly reliable infrared reflective coating 20 of the present invention is substantially the same as the first preferred embodiment, and the difference lies in the second preferred embodiment of the present invention. The infrared reflective coating 20 with good reliability further includes a second metal base film layer structure 5. The second metal base film layer structure 5 is interposed between the buffer layer 3 and the first metal base film layer structure 4. The second metal base film layer structure 5 has a first metal layer 51 and a second metal layer 52 sequentially from the buffer layer 3 away from the transparent substrate 2 . The first metal layer 51 of the second metal base film layer structure 5 is made of Ag, and the second metal layer 52 of the second metal base film layer structure 5 is made of a group selected from the group consisting of Made of two metals: Zn, Sn, Ti, Ni, ZnSn alloy, ZnTi alloy, ZnNi alloy, SnTi alloy, and SnNi alloy.

In addition, in order to effectively block the light source in the infrared band and penetrate the light source in the visible light band, preferably, the thickness of the first metal layer 51 of the second metal base film layer structure 5 is between 14 nm and 32 nm. The thickness of the second metal layer 52 of the second metal base film layer structure 5 is between 44 nm and 60 nm.

The method for fabricating the highly reliable infrared reflective coating 20 of the second preferred embodiment of the present invention is substantially the same as the first preferred embodiment, and the difference is that the manufacturing method of the second preferred embodiment is This step (b) further includes a step (b'). This step (b') is to form the second metal-based film layer structure 5 sandwiched between the buffer layer 3 and the first metal-based film layer structure 4. The second metal base film layer structure 5 has the first metal layer 51 and the second metal layer 52 in this order from the buffer layer 3 away from the transparent substrate 2 . The metal materials of the first metal layer 51 and the second metal layer 52 of the second metal base film layer structure 5 have been described above, and will not be further described herein.

Referring to FIG. 6, a third preferred embodiment of the highly reliable infrared reflective coating 20 of the present invention is substantially the same as the second preferred embodiment, and the difference lies in the third preferred embodiment of the present invention. The second metal base film layer structure 5 further has a third metal layer 53. The third metal layer 53 of the second metal base film layer structure 5 is interposed between the second metal layer 52 of the second metal base film layer structure 5 and the first metal base film layer structure 4, and is composed of A third metal selected from the group consisting of Al, an AlTi alloy, an AlNi alloy, and an AlZn alloy.

It should be noted that the first metal base film layer structure 4 and the second metal base film layer structure 5 of the present invention are made by magnetron sputtering. Those skilled in the art of sputtering know that when the base pressure in the sputtering chamber is too large, traces of moisture and oxygen will remain in the splash chamber, so even if it is plated The coating is a pure metal film, and the pure metal film may also contain a trace amount of oxygen. As apparent from the above description, in the first metal base film layer structure 4 and the second metal base film layer structure 5 of the present invention, a trace amount of oxygen component is allowed.

Referring to FIG. 7, the energy-saving glass device of the present invention comprises: a first component 200, a second component 6, and a spacer 7.

The first component 200 has the transparent substrate 2 and the highly reliable infrared reflective coating 20 of the preferred embodiment formed on the transparent substrate 2.

The second component 6 has a further transparent substrate 61 , and the other transparent substrate 61 faces the transparent substrate 2 and is spaced apart from the transparent substrate 2 .

The spacer 7 is interposed between the first component 200 and the second component 6 and together with the first component 200 and the second component 6 defines a closed space 8. In addition, the energy-saving glass device of the present invention further comprises an inert gas filled in the closed space 8.

It should be noted that the main technical feature of the present invention is that the first metal base film layer structure 4 and the second metal base film layer structure 5 of the infrared reflective coating film 20 are made of a metal material, the energy-saving glass. The manner of encapsulation of the device is a concept known to those skilled in the art, and is not the technical focus of the present invention, and will not be further described herein.

<Specific Example 1 (E1)>

A specific example 1 (E1) of the infrared reflective coating film of the present invention which is highly reliable is implemented according to the first preferred embodiment.

The specific example 1 (E1) of the present invention uses a magnetron sputtering system to sequentially form a buffer layer on a transparent substrate and sequentially has a first metal layer, a second metal layer and a third The first metal base film layer structure of the metal layer. In the specific example 1 (E1) of the present invention, the transparent substrate is a general clear glass available from Taiwan Glass Co., Ltd., and the thickness and area of the transparent substrate are 6 mm and 10 cm×10 cm, respectively; The first, second, and third metal layers of the first metal base film layer structure are a Zn layer, an Ag layer, a Zn layer, and an AlTi alloy layer, respectively, and have thicknesses of 20 nm, 28 nm, and 20, respectively. Nm and 15 nm.

Further, the transparent substrate on which the buffer layer and the first metal base film layer are formed is placed on a carbon fiber cloth in a vacuum chamber with a working pressure of 0.5 Torr, and the output power is 1100 W. The buffer layer and the first metal base film layer structure were subjected to a nitrogen microwave plasma treatment for 50 seconds. In the specific example 1 (E1) of the present invention, the carbon fiber cloth is a carbon fiber of a type 3K T300B 1x1 plain weave 210 g/m ² which is commercially available from Toray Industries, Japan.

<Specific example 2 (E2)>

A specific example 2 (E2) of the infrared reflective coating film of the present invention is substantially the same as the specific example 1 (E1), and is different in that the first metal base film layer of the specific example 2 (E2) One of the second metal layer and the third metal layer has a thickness of 35 nm and 7 nm, respectively.

<Specific example 3 (E3)>

A specific example 3 (E3) of the infrared reflective coating film of the present invention is substantially the same as the specific example 1 (E1), and is different in that the first metal base film layer of the specific example 3 (E3) One of the first metal layer and the second metal layer has a thickness of 18 nm and 10 nm, respectively.

<Specific example 4 (E4)>

A specific example 4 (E4) of the infrared reflective coating film of the present invention is substantially the same as the specific example 1 (E1), and the difference is that one of the buffer layers of the specific example 4 (E4) is a thickness of 10 TiO ₂ layer of nm.

<Specific example 5 (E5)>

A specific example 5 (E5) of the infrared reflective coating film of the present invention is substantially the same as the specific example 4 (E4), and the difference is that one of the buffer layers of the specific example 5 (E5) is a thickness of 10 The SnO ₂ layer of nm.

<Specific example 6 (E6)>

The production condition of a specific example 6 (E6) of the infrared reflective coating film of the present invention is substantially the same as that of the specific example 1 (E1), and the difference is that the specific example 6 (E6) is based on the third The preferred embodiment is implemented. In the specific example 6 (E6), the highly reliable infrared reflective coating is sequentially formed with a buffer layer on a transparent substrate, and sequentially has a first metal layer, a second metal layer, and a third layer. a second metal base film layer structure of the metal layer, and a first metal base film layer structure sequentially having a first metal layer, a second metal layer and a third metal layer. Wherein, the buffer layer is a Zn layer and has a thickness of 20 nm; the first, second and third metal layers of the second metal base film layer structure are an Ag layer, a Zn layer and an AlTi alloy layer, respectively. And the thicknesses are 28 nm, 48 nm and 3 nm respectively; the first, second and third metal layers of the first metal base film layer structure are an Ag layer, a Zn layer and an AlTi alloy layer, respectively, and the thicknesses are respectively It is 24 nm, 15 nm and 12 nm.

<Specific example 7 (E7)>

The method for producing a specific example 7 (E7) of the infrared reflective coating film of the present invention is substantially the same as the specific example 6 (E6), and the difference is that the specific example 7 (E7) is based on the first The second preferred embodiment is implemented. In the seventh embodiment (E7) of the present invention, the highly reliable infrared reflective coating is sequentially formed with a buffer layer on a transparent substrate, and sequentially has a first metal layer and a second metal layer. a two metal base film layer structure, and a first metal base film layer structure having a first metal layer, a second metal layer and a third metal layer in sequence. Wherein, the buffer layer is a Zn layer and has a thickness of 30 nm; the first and second metal layers of the second metal base film layer structure are an Ag layer and a Zn layer, respectively, and the thickness is 24 nm and 58 respectively. The first, second, and third metal layers of the first metal base film layer structure are an Ag layer, a Zn layer, and an AlTi alloy layer, respectively, and have thicknesses of 18 nm, 25 nm, and 5 nm, respectively.

<Specific Example 8 (E8)>

A specific example 8 (E8) of the infrared reflective coating film of the present invention is substantially the same as the specific example 6 (E6), and the difference is that one of the buffer layers of the specific example 8 (E8) is a thickness of 10 a TiO ₂ layer of nm; a second metal layer of the second metal base film layer structure of the specific example 8 (E8) has a thickness of 44 nm; and the first metal base film layer structure of the specific example 8 (E8) The thickness of a second and third metal layer is 20 nm and 20 nm, respectively.

<Specific Example 9 (E9)>

A specific example 9 (E9) of the infrared reflective coating film of the present invention is substantially the same as the specific example 8 (E8), and the difference is that one of the buffer layers of the specific example 9 (E9) is a thickness of 10 a SnO ₂ layer of nm; a second metal layer of the second metal base film layer structure of the specific example 9 (E9) has a thickness of 47 nm.

The buffer layers of the specific examples (E1 to E9) of the present invention, the structures of the respective metal base film layers, and their corresponding thicknesses are simply summarized in the following Table 1.

<Analysis data>

As can be seen from the transmittance curve shown in FIG. 8, the maximum transmittance of the specific example 1 (E1) in the visible light region of the present invention can approach 65%; in addition, the transmittance at the approach of 780 nm has decreased to twenty three%.

It can be seen from the transmittance curve shown in FIG. 9 that the maximum transmittance of the specific example 2 (E2) in the visible light region of the present invention can approach 65%; in addition, the transmittance at the approaching 780 nm approaches 30. %.

As can be seen from the transmittance curve shown in FIG. 10, the maximum transmittance of the specific example 3 (E3) in the visible light region of the present invention can approach 80%; in addition, the transmittance at the approach of 780 nm approaches 43. %.

As can be seen from the transmittance curve shown in Fig. 11, the maximum transmittance of the specific example 4 (E4) in the visible light region of the present invention has decreased to 51%; in addition, the transmittance at the approach of 780 nm is about 22 %. This specific example 4 (E4) is more apparent than the specific examples 1 to 3 (E1 to E3), and the buffer layer used in the specific examples 1 to 3 (E1 to E3) of the present invention is Zn, which is visible light band. The penetration rate inside has an effect of improvement.

As can be seen from the transmittance curve shown in FIG. 12, the maximum transmittance of the specific example 5 (E5) in the visible light region of the present invention also drops to 51%; in addition, the transmittance at the approach of 780 nm is about 25 %. This specific example 5 (E5) is more apparent than the specific examples 1 to 3 (E1 to E3), and the buffer layer used in the specific examples 1 to 3 (E1 to E3) of the present invention is Zn, which is visible light band. The penetration rate inside has an effect of improvement.

As can be seen from the transmittance curve shown in Fig. 13, the specific transmittance of the specific example 6 (E6) in the visible light band of the present invention is about 65%; in addition, the transmittance at the approaching 780 nm has decreased to 3%. . This specific example 6 (E6) is apparent from the specific examples 1 to 3 (E1 to E3), although the specific example 5 of the present invention uses two layers of the first metal layer (i.e., Ag) to effectively reduce the infrared band. The transmittance of the specific example 6 (E6) of the present invention is such that the second metal layer (Zn) and the third metal layer (AlTi) are maintained at a maximum transmittance of 65% in the visible light band.

As can be seen from the transmittance curve shown in FIG. 14, the specific transmittance of the specific example 7 (E7) in the visible light region of the present invention is increased to 70%; moreover, the transmittance at the approach of 780 nm is about 20%; Compared with the specific example 6 (E6), the thickness of the two first metal layers (Ag) in the specific example 7 (E7) is small, resulting in a higher transmittance in the infrared band, and the specific example 7 ( The second metal layer (Zn) of the second metal base film layer structure of E7) has a higher thickness, so that the maximum transmittance of visible light is increased to 70%, and the wavelength of the maximum transmittance is shifted to the low frequency direction. Up to 600 nm.

As can be seen from the transmittance curve shown in Fig. 15, the specific transmittance of this specific example 8 (E8) in the visible light band of the present invention is about 68%; moreover, the transmittance at the approach of 780 nm is about 4%.

As can be seen from the transmittance curve shown in Fig. 16, the specific transmittance of the specific example 9 (E9) in the visible light region of the present invention is about 60%; in addition, the transmittance at the approaching 780 nm has decreased to 5%. .

It can be seen from the scanning electron microscope (SEM) image shown in Fig. 17 (right side drawing) that the surface structure of the specific example 6 (E6) of the present invention is about 20 nm before the microwave microwave plasma treatment. Nanoparticles of ~30 nm; in contrast, the SEM image shown in Fig. 18 (right drawing) shows that the surface structure of the specific example 6 (E6) of the present invention after nitrogen microwave plasma treatment is about 100 nm~ Nanoparticles around 120 nm. Further, comparing the left side diagrams of Fig. 17 and Fig. 18, it is understood that the contact angle of 5 μl of the ultra-pure water shown in Fig. 17 and the surface of the first metal base film layer structure is small. The contact angle of 5 μl of ultrapure water shown in Fig. 18 with the surface of the first metal base film layer structure is large. It was confirmed that the surface of the specific example 6 (E6) was hydrophilic property before the microwave microwave plasma treatment, and it was easier to adsorb water gas. The surface of the specific example 6 (E6) was 30 minutes after the microwave microwave plasma treatment. After that, it is hydrophobic, and the water can easily slide on the surface. It is also confirmed that the surface of the specific example 6 (E6) is treated with a nanoparticle having a size of 100 nm to 120 nm after the microwave microwave plasma treatment. Produces a lotus effect.

In summary, the infrared reflective coating, the energy-saving glass device and the method for manufacturing the coating of the invention have improved reliability, and the transmittance of visible light is improved by the second metal layer of the first and second metal-based film layers. It can avoid the oxidation problem caused by the traditional transparent dielectric layer; in addition, the microwave plasma treatment not only enhances the adhesion of the infrared reflective coating, but also makes the surface hydrophobic, which is beneficial to hinder the entry of moisture and increase the infrared reflective coating. With reliability, it is indeed possible to achieve the object of the present invention.

The above is only the preferred embodiment and the specific examples of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent change according to the scope of the invention and the description of the invention. And modifications are still within the scope of the invention patent.

2. . . Light transmissive substrate

20. . . Infrared reflective coating

200. . . First component

3. . . The buffer layer

4. . . First metal base film structure

41. . . First metal layer

42. . . Second metal layer

43. . . Third metal layer

5. . . Second metal base film structure

51. . . First metal layer

52. . . Second metal layer

53. . . Third metal layer

6. . . Second component

61. . . Another transparent substrate

7. . . Spacer

8. . . Closed space

91. . . Vacuum chamber

92. . . Base

MW. . . microwave

Figure 1 is a cross-sectional view showing the infrared reflective coating disclosed in US 7,906,203 B2;

2 is a front elevational view showing a first preferred embodiment of the highly reliable infrared reflective coating of the present invention;

3 is a flow chart showing a method for fabricating a highly reliable infrared reflective coating according to the first preferred embodiment of the present invention;

4 is a partial enlarged view of a step (c) of FIG. 3, illustrating the microwave and a substrate, a transparent substrate, and a first metal base film layer in the manufacturing method of the first preferred embodiment of the present invention. Transfer relationship between structures;

Figure 5 is a front elevational view showing a second preferred embodiment of the highly reliable infrared reflective coating of the present invention;

Figure 6 is a front elevational view showing a third preferred embodiment of the highly reliable infrared reflective coating of the present invention;

Figure 7 is a partial front elevational view showing the present invention using the infrared reflective coating of the preferred embodiments to form an energy-saving glass device;

Figure 8 is a graph showing the transmittance of a specific example 1 (E1) of the highly reliable infrared reflective coating of the present invention;

Figure 9 is a graph showing the transmittance of a specific example 2 (E2) of the highly reliable infrared reflective coating of the present invention;

Figure 10 is a graph showing the transmittance of a specific example 3 (E3) of the highly reliable infrared reflective coating of the present invention;

Figure 11 is a graph showing the transmittance of a specific example 4 (E4) of the highly reliable infrared reflective coating of the present invention;

Figure 12 is a graph showing the transmittance of a specific example 5 (E5) of the highly reliable infrared reflective coating of the present invention;

Figure 13 is a graph showing the transmittance of a specific example 6 (E6) of the highly reliable infrared reflective coating of the present invention;

Figure 14 is a graph showing the transmittance of a specific example 7 (E7) of the highly reliable infrared reflective coating of the present invention;

Figure 15 is a graph showing the transmittance of a specific example 8 (E8) of the highly reliable infrared reflective coating of the present invention;

Figure 16 is a graph showing the transmittance of a specific example 9 (E9) of the highly reliable infrared reflective coating of the present invention;

Figure 17 is a SEM surface topography image showing the surface structure of the specific example 6 (E6) of the present invention before microwave plasma treatment;

Fig. 18 is a SEM surface topography image showing the surface structure of the specific example 6 (E6) of the present invention after microwave plasma treatment.

2. . . Light transmissive substrate

20. . . Infrared reflective coating

3. . . The buffer layer

4. . . First metal base film structure

41. . . First metal layer

42. . . Second metal layer

43. . . Third metal layer

Claims (18)

A highly reliable infrared reflective coating is formed on a transparent substrate, the infrared reflective coating comprises: a buffer layer formed on the transparent substrate; and a first metal base film layer formed on the buffer layer The first metal base film layer structure has a first metal layer, a second metal layer and a third metal layer sequentially from the buffer layer away from the light transmitting plate; wherein the first metal The first metal layer of the base film layer structure is made of Ag; wherein the second metal layer of the first metal base film layer structure is made of a second metal selected from the group consisting of: a Zn, a Sn, a Ti, a Ni, a ZnSn alloy, a ZnTi alloy, a ZnNi alloy, a SnTi alloy, and a SnNi alloy; and wherein the third metal layer of the first metal base film layer structure is a barrier layer. The infrared reflective coating according to claim 1, wherein the third metal layer of the first metal base film layer is made of a third metal selected from the group consisting of the following: : Al, AlTi alloy, AlNi alloy, and AlZn alloy; the buffer layer is made of a material selected from the group consisting of Zn, ZnO, SnO ₂ , and TiO ₂ . The infrared reflective coating according to claim 2, wherein the first metal base layer has a first metal layer having a thickness of between 14 nm and 32 nm; the first metal base The thickness of the second metal layer of the film structure is between 10 nm and 35 nm. The infrared reflective coating according to claim 3 of the patent application scope further includes a second metal base film layer structure, wherein the second metal base film layer structure is sandwiched between the buffer layer and the first metal base film layer Between the structures, the second metal base film layer structure has a first metal layer and a second metal layer sequentially from the buffer layer away from the transparent substrate, and the second metal base film layer structure is first The metal layer is made of Ag, and the second metal layer of the second metal base film layer structure is made of a second metal selected from the group consisting of Zn, Sn, Ti, Ni, ZnSn Alloy, ZnTi alloy, ZnNi alloy, SnTi alloy, and SnNi alloy. The infrared reflective coating according to claim 4, wherein the second metal base layer structure further has a third metal layer, and the third metal base layer has a third metal layer interposed therebetween. Between the second metal layer of the second metal base film layer structure and the first metal base film layer structure, and made of a third metal selected from the group consisting of: Al, AlTi alloy , AlNi alloy, and AlZn alloy. The infrared reflective coating according to claim 4, wherein the thickness of the first metal layer of the second metal base layer structure is between 14 nm and 32 nm; the second metal base The thickness of the second metal layer of the film structure is between 44 nm and 60 nm. An energy-saving glass device comprising: a first component, a light-transmissive substrate, and a highly reliable infrared reflective coating formed on the light-transmissive substrate according to any one of claims 1 to 6; a second component having another transparent substrate facing the transparent substrate and spaced apart from the transparent substrate; and a spacer sandwiched between the first component and the second component And together with the first component and the second component define a closed space. The energy-saving glass device according to claim 7 of the patent application, further comprising an inert gas filled in the closed space. A method for fabricating a highly reliable infrared reflective coating is formed on a transparent substrate. The manufacturing method comprises the steps of: (a) forming a buffer layer on the transparent substrate; and (b) forming a buffer layer on the buffer layer. a first metal base film layer structure, the first metal base film layer structure has a first metal layer, a second metal layer and a third metal layer sequentially from the buffer layer away from the transparent substrate; And (c) after the step (b), the transparent substrate on which the buffer layer and the first metal base film layer are formed is disposed on a substrate of a vacuum chamber to serve the buffer layer and the buffer layer The first metal base film layer structure is subjected to microwave plasma treatment, and the adhesion of the buffer layer and the first metal base film layer structure is improved; wherein the first metal base layer structure has a first metal layer formed by Ag The second metal layer of the first metal base film layer structure is made of a second metal selected from the group consisting of Zn, Sn, Ti, Ni, ZnSn alloy, ZnTi An alloy, a ZnNi alloy, a SnTi alloy, and a SnNi alloy; wherein the first metal base film The third metal layer is a barrier layer structure; and in the step (c) the substrate is made of a material selected from the group consisting of: carbon fibers, graphite, and semiconductor materials. The method for fabricating an infrared reflective coating according to claim 9 wherein the area of the substrate is greater than or equal to the area of the buffer layer on the transparent substrate and greater than or equal to the first metal base film layer. The area of the structure, and the area of the substrate overlaps with the area of the buffer layer on the transparent substrate, and overlaps with the area of the first metal base film layer structure. According to the method for producing an infrared reflective coating which is excellent in reliability as described in claim 9, wherein the vacuum chamber has a working pressure of 0.5 Torr or less when the step (c) is carried out. The method for manufacturing an infrared reflective coating according to claim 11, wherein the microwave plasma treatment in the step (c) is to provide an output between 750 W and 2000 W via a power supply. power. The method for producing an infrared reflective coating according to claim 9, wherein the semiconductor material is germanium. The method for fabricating a highly reliable infrared reflective coating according to claim 9, wherein the third metal layer of the first metal base film layer is a third metal selected from the group consisting of Formed by: Al, AlTi alloy, AlNi alloy, and AlZn alloy, and a surface of the third metal layer of the first metal base film layer structure is hydrophobic after a predetermined time after the microwave plasma treatment; The buffer layer is made of a material selected from the group consisting of Zn, ZnO, SnO ₂ , and TiO ₂ . The method for fabricating a highly reliable infrared reflective coating according to claim 14, wherein the thickness of the first metal layer of the first metal base layer structure is between 14 nm and 32 nm; The thickness of the second metal layer of a metal base film structure is between 10 nm and 35 nm. The method for fabricating the highly reliable infrared reflective coating according to claim 15 of the patent application further comprises a step (b') before the step (b), wherein the step (b') is to form a clip in the buffer. a second metal base film layer structure between the layer and the first metal base film layer structure, the second metal base film layer structure sequentially has a first metal layer from the buffer layer away from the transparent substrate a second metal layer, the first metal layer of the second metal base film layer structure is made of Ag, and the second metal layer of the second metal base film layer structure is composed of a group selected from the group consisting of The second metal is made of: Zn, Sn, Ti, Ni, ZnSn alloy, ZnTi alloy, ZnNi alloy, SnTi alloy, and SnNi alloy. The method for fabricating an infrared reflective coating according to claim 16 , wherein the second metal base layer structure further comprises a third metal layer, and the second metal base layer structure is a third metal The layer is sandwiched between the second metal layer of the second metal base film layer structure and the first metal base film layer structure, and is made of a third metal selected from the group consisting of: Al , AlTi alloy, AlNi alloy, and AlZn alloy. The method for fabricating an infrared reflective coating according to claim 16 , wherein the thickness of the first metal layer of the second metal base layer structure is between 14 nm and 32 nm; The thickness of the second metal layer of the two metal-based film layer structure is between 44 nm and 60 nm.