CN102910836A - Infrared reflection coating film with good reliability and manufacturing method thereof and energy-saving glass device - Google Patents
Infrared reflection coating film with good reliability and manufacturing method thereof and energy-saving glass device Download PDFInfo
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- CN102910836A CN102910836A CN2011102303838A CN201110230383A CN102910836A CN 102910836 A CN102910836 A CN 102910836A CN 2011102303838 A CN2011102303838 A CN 2011102303838A CN 201110230383 A CN201110230383 A CN 201110230383A CN 102910836 A CN102910836 A CN 102910836A
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Abstract
The invention relates to an infrared reflection coating film with good reliability and a manufacturing method thereof and an energy-saving glass device. The infrared reflection coating film with good reliability is formed on a transparent substrate. The infrared reflection coating film comprises a buffer layer and a first metal base film layer structure, wherein the buffer layer is formed on the transparent substrate, and the first metal base film layer structure is formed on the buffer layer. A first metal layer, a second metal layer and a third metal layer are sequentially arranged at the first metal base film layer structure from the buffer layer to the direction far away from the transparent substrate. The first metal layer is made of Ag, and the second metal layer is made of the following second metal of formed groups: Zn, Sn, Ti, ZnSn alloy, ZnTi alloy, ZnNi alloy, SnTi alloy and SnNi alloy. The third metal layer of the first metal base film layer structure is a blocking layer. The invention also provides the energy-saving glass device and the manufacturing method of the coating film.
Description
Technical field
The present invention relates to a kind of infrared reflection plated film (infrared reflection coating), particularly relate to the making method of the good infrared reflection plated film of a kind of reliability (reliability), energy-saving glass device (low-emissivity glass unit) and plated film thereof.
Background technology
The infrared reflection plated film visible light of providing (visible light) is provided penetrates (transmission), and intercepts the function of infrared penetration.When being in the time in winter, the body heat that the infrared reflection plated film more can produce indoor human body is confined to be in room temperature state to keep room temp in the indoor environment.On the contrary, when the indoor need in summer use conditioning unit when keeping room temperature, the infrared reflection plated film just can intercept extraneous ultrared penetrating, avoid because penetrating of the ultrared radiation in the external world (radiation) heat energy causes room temp high, and save whereby the electric energy of the required consumption of conditioning unit.Therefore, general normal being sputtered on the transparent glass substrate for using as energy-saving glass of infrared reflection plated film.
See also shown in Figure 1, be the explanation US 7,906, the cross-sectional schematic of the disclosed infrared reflection plated film of 203B2.US 7,906, and 203B2 discloses a kind of infrared reflection plated film 1, are to be formed on the glass substrate 11.This infrared reflection plated film 1 comprises: one is formed at the transparent dielectric layer (transparent dielectric layer) 12 on the surface 110 of this glass substrate 11, and three layers of infrared reflection film 13.Wherein every one deck infrared reflection film 13 sequentially has one by made infrared-reflecting layers 131, barrier layers (blocke rlayer) 132 of high conductivity (conductivity) metal material such as Ag, Cu or Au from this transparent dielectric layer 12 towards the direction away from this glass substrate 11, and a transparent dielectric layer 133.
Those transparent dielectric layers 133 are made of simple layer oxide compound (oxide), also can be by three layers, five layers or seven layers of different oxide compound (as, ZnO and SnO
2) consist of, its main purpose is to be, promotes the penetration coefficient (transmittance) of visible light.
Those barrier layers 132 can be by Ti, Ni, Cr, NiCr, or the metallic substance such as Nb is made.Owing to when being coated with those transparent dielectric layers 133, needing in reaction chamber, to introduce oxygen (O
2) to be coated with oxide compound; Therefore, the main purpose of those barrier layers 132 is to be, the metallic substance such as blocking oxygen and Ag or Cu produce oxidizing reaction, and keeps the reliability of this infrared reflection plated film 1 integral body.Although the infrared penetration rate of this infrared reflection plated film 1 can be reduced to about 1.5%; Yet this infrared reflection plated film 1 still need use oxide compound; Therefore, its global reliability unavoidable destruction of oxygen still.
Through above-mentioned explanation as can be known, the problem of oxidation of improving the infrared reflection plated film also promotes the reliability of infrared reflection plated film whereby, is the required improved problem of this technical field.
This shows, above-mentioned existing infrared reflection plated film obviously still has inconvenience and defective, and demands urgently further being improved in product structure, manufacture method and use.In order to solve the problem of above-mentioned existence, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but have no for a long time applicable design is finished by development always, and common product and method do not have appropriate structure and method to address the above problem, and this obviously is the problem that the anxious wish of relevant dealer solves.Therefore how to found the making method of good infrared reflection plated film, energy-saving glass device and plated film thereof of a kind of new reliability, real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Summary of the invention
The object of the invention is to, overcome the defective that existing infrared reflection plated film exists, and provide a kind of reliability good infrared reflection plated film, technical problem to be solved is to make its second metal level by one first metal matrix (metal-based) film layer structure promote the penetration coefficient of visible light, to avoid traditional problem of oxidation that transparent dielectric layer was produced, thereby promote the reliability of infrared reflection plated film, be very suitable for practicality.
Another object of the present invention is to, a kind of new energy-saving glass device is provided, technical problem to be solved is to make it have the good infrared reflection plated film of above-mentioned reliability, with light transmission and the reliability that promotes energy-conservation glass device, thereby more is suitable for practicality.
A further object of the present invention is, the making method of the good infrared reflection plated film of a kind of new reliability is provided, technical problem to be solved is to make it be used to make the good infrared reflection plated film of above-mentioned reliability, and utilize Microwave plasma treatment to promote the tack of infrared reflection plated film and make its its surface be hydrophobicity (hydrophobic property), the reliability that is beneficial to intercept entering of aqueous vapor and increases the infrared reflection plated film, thus more be suitable for practicality.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to the good infrared reflection plated film of a kind of reliability that the present invention proposes, be to be formed on a printing opacity (transparent) substrate.This infrared reflection plated film comprises: one is formed at the buffer layer (buffer layer) on this transparent substrates, and first a metal matrix rete structure that is formed on this buffer layer.This first metal matrix rete structure sequentially has a first metal layer, one second metal level and one the 3rd metal level from this buffer layer towards the direction away from this transparent substrates.The first metal layer of this first metal matrix rete structure is made by Ag.The second metal level of this first metal matrix rete structure is that to be selected from the second metal of the following group that consists of by one made: Zn, Sn, Ti, Ni, ZnSn alloy, ZnTi alloy, ZnNi alloy, SnTi alloy, and SnNi alloy.The 3rd metal level of this first metal matrix rete structure is a barrier layer.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Preferably, the infrared reflection plated film that aforesaid reliability is good, wherein the 3rd metal level of this first metal matrix rete structure is that to be selected from the 3rd metal of the following group that consists of by one made: Al, AlTi alloy, AlNi alloy, and AlZn alloy; This buffer layer is that to be selected from the material of the following group that consists of by one made: Zn, ZnO, SnO
2, and TiO
2
Preferably, the infrared reflection plated film that aforesaid reliability is good, wherein the thickness of the first metal layer of this first metal matrix rete structure is between between 14nm～32nm; The thickness of the second metal level of this first metal matrix rete structure is between between 10nm～35nm.
Preferably, the infrared reflection plated film that aforesaid reliability is good, also comprise one deck the second metal matrix rete structure, this the second metal matrix rete structure is folded between this buffer layer and this first metal matrix rete structure, this the second metal matrix rete structure sequentially has one deck the first metal layer and one deck the second metal level from this buffer layer towards the direction away from this transparent substrates, the first metal layer of this second metal matrix rete structure is made by Ag, the second metal level of this second metal matrix rete structure is that to be selected from the second metal of the following group that consists of by one made: Zn, Sn, Ti, Ni, the ZnSn alloy, the ZnTi alloy, the ZnNi alloy, SnTi alloy, and SnNi alloy.
Preferably, the infrared reflection plated film that aforesaid reliability is good, wherein this second metal matrix rete structure also has one deck the 3rd metal level, the 3rd metal level of this second metal matrix rete structure is folded between second metal level and this first metal matrix rete structure of this second metal matrix rete structure, and be that to be selected from the 3rd metal of the following group that consists of by one made: Al, AlTi alloy, AlNi alloy, and AlZn alloy.
Preferably, the infrared reflection plated film that aforesaid reliability is good, wherein the thickness of the first metal layer of this second metal matrix rete structure is between between 14nm～32nm; The thickness of the second metal level of this second metal matrix rete structure is between between 44nm～60nm.
The object of the invention to solve the technical problems also realizes by the following technical solutions.A kind of energy-saving glass device according to the present invention proposes comprises: one first element, one second element, and a distance piece (spacer).This first element has a transparent substrates, and a good infrared reflection plated film of reliability as previously described that is formed on this transparent substrates.This second element has another transparent substrates, and this another transparent substrates arranges towards this transparent substrates and with this transparent substrates interval.This distance piece is folded in this first element and the second interelement, and jointly defines an enclosed space with this first element and the second element.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Preferably, aforesaid energy-saving glass device also comprises a rare gas element (inert gas) that is placed into this enclosed space.
The object of the invention to solve the technical problems realizes in addition more by the following technical solutions.According to the making method of the good infrared reflection plated film of a kind of reliability of the present invention's proposition, be to be formed on the transparent substrates.This making method comprises following steps:
(a) form a buffer layer at this transparent substrates;
(b) form one first metal matrix rete structure at this buffer layer, this first metal matrix rete structure sequentially has a first metal layer, one second metal level and one the 3rd metal level from this buffer layer towards the direction away from this transparent substrates; And
(c) after this step (b), this transparent substrates that is formed with this buffer layer and this first metal matrix rete structure is arranged in the substrate of a vacuum cavity (vacuum chamber), so that this buffer layer and this first metal matrix rete structure are bestowed Microwave plasma treatment (microwave plasma treatment), and promote the tack (adhesion) of this buffer layer and this first metal matrix rete structure;
Wherein, the first metal layer of this first metal matrix rete structure is made by Ag;
Wherein, the second metal level of this first metal matrix rete structure is that to be selected from the second metal of the following group that consists of by one made: Zn, Sn, Ti, Ni, ZnSn alloy, ZnTi alloy, ZnNi alloy, SnTi alloy, and SnNi alloy;
Wherein, the 3rd metal level of this first metal matrix rete structure is a barrier layer; And
Wherein, the substrate of this step (c) is that to be selected from the material of the following group that consists of by one made: carbon fiber (carbon fiber), graphite (graphite) and semi-conductor (semiconductor) material.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Preferably, the making method of the infrared reflection plated film that aforesaid reliability is good, wherein the area of this substrate is the area more than or equal to the buffer layer on this transparent substrates, and more than or equal to the area of this first metal matrix rete structure, and the area of the buffer layer on the area of this substrate and this transparent substrates is overlapped, and overlapped with the area of this first metal matrix rete structure.
Preferably, the making method of the infrared reflection plated film that aforesaid reliability is good, wherein when implementing this step (c), the operating pressure of this vacuum cavity (working pressure) is to be less than or equal to 0.5 holder (Torr).
Preferably, the making method of the infrared reflection plated film that aforesaid reliability is good, wherein the Microwave plasma treatment of this step (c) is to provide a output rating (output power) between between 750W～2000W via a power supply unit (power supply).
Preferably, the making method of the infrared reflection plated film that aforesaid reliability is good, wherein this semiconductor material is silicon (Si).
Preferably, the making method of the infrared reflection plated film that aforesaid reliability is good, wherein the 3rd metal level of this first metal matrix rete structure is that to be selected from the 3rd metal of the following group that consists of by one made: Al, AlTi alloy, AlNi alloy, and the AlZn alloy, and a surface of the 3rd metal level of this first metal matrix rete structure is to be hydrophobicity after the scheduled time behind the Microwave plasma treatment; This buffer layer is that to be selected from the material of the following group that consists of by one made: Zn, ZnO, SnO
2, and TiO
2
Preferably, the making method of the infrared reflection plated film that aforesaid reliability is good, wherein the thickness of the first metal layer of this first metal matrix rete structure is between between 14nm～32nm; The thickness of the second metal level of this first metal matrix rete structure is between between 10nm～35nm.
Preferably, the making method of the infrared reflection plated film that aforesaid reliability is good, wherein in the front step (b ') that also comprises of this step (b), this step (b ') be to form one deck to be folded in this buffer layer and interstructural the second metal matrix rete structure of this first metal matrix rete, this the second metal matrix rete structure sequentially has one deck the first metal layer and one deck the second metal level from this buffer layer towards the direction away from this transparent substrates, the first metal layer of this second metal matrix rete structure is made by Ag, the second metal level of this second metal matrix rete structure is that to be selected from the second metal of the following group that consists of by one made: Zn, Sn, Ti, Ni, the ZnSn alloy, the ZnTi alloy, the ZnNi alloy, SnTi alloy, and SnNi alloy.
Preferably, the making method of the infrared reflection plated film that aforesaid reliability is good, wherein this second metal matrix rete structure also has one deck the 3rd metal level, the 3rd metal level of this second metal matrix rete structure is folded between second metal level and this first metal matrix rete structure of this second metal matrix rete structure, and be that to be selected from the 3rd metal of the following group that consists of by one made: Al, AlTi alloy, AlNi alloy, and AlZn alloy.
Preferably, the making method of the infrared reflection plated film that aforesaid reliability is good, wherein the thickness of the first metal layer of this second metal matrix rete structure is between between 14nm～32nm; The thickness of the second metal level of this second metal matrix rete structure is between between 44nm～60nm.
The present invention compared with prior art has obvious advantage and beneficial effect.By technique scheme, the making method of infrared reflection plated film, energy-saving glass device and plated film thereof that reliability of the present invention is good has following advantages and beneficial effect at least: the present invention promotes the penetration coefficient of visible light by the second metal level of this first metal matrix rete structure, avoiding traditional problem of oxidation that transparent dielectric layer was produced, thereby promoted the reliability of infrared reflection plated film.
In sum, the invention relates to the making method of the good infrared reflection plated film of a kind of reliability, energy-saving glass device and plated film thereof.The infrared reflection plated film that this reliability is good is to be formed on the transparent substrates.This infrared reflection plated film comprises: one is formed at the buffer layer on this transparent substrates, and first a metal matrix rete structure that is formed on this buffer layer.This first metal matrix rete structure sequentially has a first metal layer, one second metal level and one the 3rd metal level from this buffer layer towards the direction away from this transparent substrates.This first metal layer is made by Ag; This second metal level is that to be selected from the second metal of the following group that consists of by one made: Zn, Sn, Ti, Ni, ZnSn alloy, ZnTi alloy, ZnNi alloy, SnTi alloy and SnNi alloy.The 3rd metal level of this first metal matrix rete structure is a barrier layer.The present invention also provides the making method of a kind of energy-saving glass device and aforementioned plated film.The present invention is a significant progress in technology, and has obvious positively effect, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technique means of the present invention, and can be implemented according to the content of specification sheets, and for above and other purpose of the present invention, feature and advantage can be become apparent, below especially exemplified by preferred embodiment, and the cooperation accompanying drawing, be described in detail as follows.
Description of drawings
Fig. 1 is explanation US 7,906, the cross-sectional schematic of the disclosed infrared reflection plated film of 203B2.
Fig. 2 is that the master of one first preferred embodiment of the good infrared reflection plated film of explanation reliability of the present invention looks schematic diagram.
Fig. 3 is the schema of the making method of the good infrared reflection plated film of the reliability of this first preferred embodiment of explanation the present invention.
Fig. 4 is the step (c) of Fig. 3, illustrate the present invention when implementing the making method of this first preferred embodiment microwave and the partial enlarged drawing of a substrate, a transparent substrates and the interstructural transitive relation of one first metal matrix rete.
Fig. 5 is that the master of one second preferred embodiment of the good infrared reflection plated film of explanation reliability of the present invention looks schematic diagram.Fig. 6 is that the master of one the 3rd preferred embodiment of the good infrared reflection plated film of explanation reliability of the present invention looks schematic diagram.
Fig. 7 is that explanation the present invention uses the infrared reflection plated film of those preferred embodiments to look schematic diagram with the part master who consists of an energy-saving glass device.
Fig. 8 is the penetration coefficient graphic representation of penetration coefficient of a concrete example 1 (E1) of the good infrared reflection plated film of explanation reliability of the present invention.
Fig. 9 is the penetration coefficient graphic representation of penetration coefficient of a concrete example 2 (E2) of the good infrared reflection plated film of explanation reliability of the present invention.
Figure 10 is the penetration coefficient graphic representation of penetration coefficient of a concrete example 3 (E3) of the good infrared reflection plated film of explanation reliability of the present invention.
Figure 11 is the penetration coefficient graphic representation of penetration coefficient of a concrete example 4 (E4) of the good infrared reflection plated film of explanation reliability of the present invention.
Figure 12 is the penetration coefficient graphic representation of penetration coefficient of a concrete example 5 (E5) of the good infrared reflection plated film of explanation reliability of the present invention.
Figure 13 is the penetration coefficient graphic representation of penetration coefficient of a concrete example 6 (E6) of the good infrared reflection plated film of explanation reliability of the present invention.
Figure 14 is the penetration coefficient graphic representation of penetration coefficient of a concrete example 7 (E7) of the good infrared reflection plated film of explanation reliability of the present invention.
Figure 15 is the penetration coefficient graphic representation of penetration coefficient of a concrete example 8 (E8) of the good infrared reflection plated film of explanation reliability of the present invention.
Figure 16 is the penetration coefficient graphic representation of penetration coefficient of a concrete example 9 (E9) of the good infrared reflection plated film of explanation reliability of the present invention.
Figure 17 is sweep electron microscope (scanning electron microscope, SEM) the surface topography striograph of the surface tissue of explanation this concrete example 6 (E6) of the present invention before Microwave plasma treatment.
Figure 18 is the SEM surface topography striograph of the surface tissue of explanation this concrete example 6 (E6) of the present invention behind Microwave plasma treatment.
Embodiment
Reach technique means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, its embodiment of making method, structure, method, step, feature and effect thereof to good infrared reflection plated film, energy-saving glass device and plated film thereof of the reliability of foundation the present invention proposition are described in detail as follows.
Relevant aforementioned and other technology contents of the present invention, Characteristic can clearly present in the following detailed description that cooperates with reference to graphic preferred embodiment.For convenience of description, in following embodiment, identical element represents with identical numbering.
Seeing also shown in Figure 2ly, is that the master of one first preferred embodiment of the good infrared reflection plated film of explanation reliability of the present invention looks schematic diagram.One first preferred embodiment of the infrared reflection plated film 20 that reliability of the present invention is good is to be formed on the transparent substrates 2.The first preferred embodiment of this infrared reflection plated film 20 comprises a buffer layer 3 that is formed on this transparent substrates 2, and first a metal matrix rete structure 4 that is formed on this buffer layer 3.This first metal matrix rete structure 4 sequentially has a first metal layer 41, one second metal level 42 and one the 3rd metal level 43 from this buffer layer 3 towards the direction away from this transparent substrates 2.
The first metal layer 41 of this first metal matrix rete structure 4 is made by Ag.The second metal level 42 of this first metal matrix rete structure 4 is that to be selected from the second metal of the following group that consists of by one made: Zn, Sn, Ti, Ni, ZnSn alloy, ZnTi alloy, ZnNi alloy, SnTi alloy, and SnNi alloy.The 3rd metal level 43 of this first metal matrix rete structure 4 is barrier layers.
Preferably, the 3rd metal level 43 of this first metal matrix rete structure 4 is that to be selected from the 3rd metal of the following group that consists of by one made: Al, AlTi alloy, AlNi alloy, and AlZn alloy; This buffer layer 3 is that to be selected from the material of the following group that consists of by one made: Zn, ZnO, SnO
2, and TiO
2It should be noted that, the main purpose of this buffer layer 3 is the tacks that are to promote 41 of the first metal layers of this transparent substrates 2 and this first metal matrix rete structure 4, is the penetration coefficient that is to promote visible light on the other hand herein.
It is worth mentioning that again, the present invention utilizes the second metal level 42 and the 3rd metal level 43 in this first metal matrix rete structure 4 to replace existing metal barrier layer and oxidic transparent dielectric layer, and then avoids producing oxide compound and affecting plated film quality and reliability in infrared reflection plated film 20 internal causes of the present invention.
The Main Function of the second metal level 42 of this first metal matrix rete structure 4 of the present invention is, adjusts the penetration coefficient of visible light.In a concrete example, the second metal level 42 of this first metal matrix rete structure 4 is made by Zn, wherein, select the major cause of Zn to be, required output rating is low and sputtering yield is high when implementing magnetic control sputtering plating (magnetron sputtering), and therefore, cost of manufacture is low.
The Main Function of the 3rd metal level 43 of this first metal matrix rete structure 4 of the present invention is to be, intercept the diffusion of aqueous vapor (moisture), oxygen, produce oxidizing reaction and affect its reliability so as to avoiding aqueous vapor, oxygen and this first metal matrix rete structure 4.In a concrete example, the 3rd metal level 43 of this first metal matrix rete structure 4 is made by the AlTi alloy; Wherein, select the reason of AlTi alloy to be, the penetration coefficient that it can provide enough physical strength [such as, hardness (hardness)] and adjust visible light.It is worth mentioning that, under the condition that does not affect the visible light penetration coefficient, the present invention more can be further according to demand with other formation one top layer (top layer) on the 3rd metal level 43 of this first metal matrix rete structure 4.As, use sol-gel method (sol-gel) preparation thickness as above versicolor oxide compound, carbide (carbide) or the nitride (nitride) of 100nm with on the 3rd metal level 43 that is coated on this first metal matrix rete structure 4, reach whereby rich color and promote the effects such as integrally-built wear resistance, oxidation-resistance, and reach the purpose that monolithic glass uses.
For the light source that effectively intercepts the infrared rays wave band and the light source of visible light wave range is penetrated, therefore, preferably, the thickness of the first metal layer 41 of this first metal matrix rete structure 4 is between between 14nm～32nm; The thickness of the second metal level 42 of this first metal matrix rete structure 4 is between between 10nm～35nm; The thickness of the 3rd metal level 43 of this first metal matrix rete structure 4 is between between 3nm～20nm.
See also Fig. 3 and shown in Figure 4, Fig. 3 is the schema of the making method of the good infrared reflection plated film of the reliability of this first preferred embodiment of explanation the present invention.Fig. 4 is the step (c) of Fig. 3, illustrate the present invention when implementing the making method of this first preferred embodiment microwave and the partial enlarged drawing of a substrate, a transparent substrates and the interstructural transitive relation of one first metal matrix rete.The making method of the infrared reflection plated film 20 that the reliability of this first preferred embodiment of the present invention is good is to be formed on this transparent substrates 2.The making method of this first preferred embodiment comprises following steps:
(a) form this buffer layer 3 at this transparent substrates 2;
(b) form this first metal matrix rete structure 4 at this buffer layer 3, this first metal matrix rete structure 4 sequentially has this first metal layer 41, this second metal level 42 and the 3rd metal level 43 from this buffer layer 3 towards the direction away from this transparent substrates 2; And
(c) after this step (b), this transparent substrates 2 that is formed with this buffer layer 3 and this first metal matrix rete structure 4 is arranged in the substrate 92 of a vacuum cavity 91, so that this buffer layer 3 and this first metal matrix rete structure 4 are bestowed Microwave plasma treatment, and promote the tack of this buffer layer 3 and this first metal matrix rete structure 4.
Wherein, the substrate 92 of this step (c) is that to be selected from the material of the following group that consists of by one made: carbon fiber, graphite and semiconductor material.
Being applicable to semiconductor material of the present invention is silicon.Because having high heat, the materials such as carbon fiber, graphite and silicon pass coefficient (thermal conductivity); In addition, these a little materials are good for the absorptivity (absorptivity) of microwave M W.Therefore, can rapidly microwave M W be changed into the heat energy H of high temperature.The making method of this first preferred embodiment of the present invention mainly is to possess by carbon fiber, graphite and semiconductor material the microwave M W energy transform into heat energy H of rapid absorption microwave M W being absorbed arranged, reach the promptly speciality such as dispersion and transferring heat energy H, so that microwave M W promptly absorbs and energy transform into heat energy H by this substrate 92, and promptly disperse buffer layer 3 and the first metal matrix rete structure 4 to this transparent substrates 2 with transferring heat energy H by this substrate 92.Whereby, microwave M W absorbs rapidly the heat energy H that changes through this substrate 92, the atom (atom) that can be between this transparent substrates 2, this buffer layer 3 and this first metal matrix rete structure 4 three's interfaces (interface) provides good cross-diffusion (interdiffusion) to reach fast microwave thermal sintering (sintering), and then promotes its triangular tack.
For so that microwave M W effectively disperseed and be passed to this buffer layer 3 and this first metal matrix rete structure 4, preferably, by overlooking direction when observing, the area of this substrate 92 is the areas more than or equal to the buffer layer 3 on this transparent substrates 2, and more than or equal to the area of this first metal matrix rete structure 4, and the area of the buffer layer 3 on the area of this substrate 92 and this transparent substrates 2 is overlapped, and overlapped with the area of the first metal matrix rete structure 4.
It should be noted that herein, when operating pressure more hour (as, 0.05Torr), 91 wishs of this vacuum cavity produce the time longer (that is to say, be difficult for producing microwave plasma) of microwave plasma; On the contrary, when operating pressure is larger (as, 5Torr), 91 of this vacuum cavities more easily produce microwave plasma.In addition, for avoiding this vacuum cavity 91 to make this first metal matrix rete structure 4 produce the problem of oxidation under the normal pressure (atmospheric pressure) because being in; Therefore, preferably, when implementing this step (c), the operating pressure of this vacuum cavity 91 is to be less than or equal to 0.5Torr.
Preferably, the Microwave plasma treatment of this step (c) is to provide a output rating between between 750W～2000W via a power supply unit.It should be noted that again, the size of the output rating that power supply unit provides mainly is relevant with the speed speed that produces microwave plasma; In other words, output rating is larger, and the speed that produces microwave plasma is faster; In addition, can be understood by the epimere explanation, the more low more difficult generation microwave plasma of operating pressure, and the size of operating pressure mainly relate to air-bleed system [as, pump (pump)] exhaust capacity, therefore, the lower value of operating pressure that is applicable to the vacuum cavity 91 of this step of the present invention (c) is the exhaust capacity that depends on air-bleed system, so long as the operating pressure of this vacuum cavity 91 can be reduced to high vacuum state, all be fit to be implemented on this step of the present invention (c).But should be noted that, when the vacuum cavity 91 of this step (c) is in high vacuum state, its output rating that provides is not relatively to improve, and is exactly the relatively prolongation of time that this step (c) is implemented, and just can reach the purpose that promotes surface hydrophobicity.
Preferably, the plasma source of the Microwave plasma treatment of this step (c) (plasma source) is nitrogen (N
2), argon gas (Ar), or acetylene (C
2H
2).
Through above stated specification as can be known, the 3rd metal level 43 of the first metal matrix rete structure 4 of this first preferred embodiment of the present invention is preferably that to be selected from the 3rd metal of the following group that consists of by one made: Al, AlTi alloy, AlNi alloy, and AlZn alloy; Therefore, a surface of the 3rd metal level 43 of this first metal matrix rete structure 4 is to be hydrophobicity after the scheduled time behind the Microwave plasma treatment.It should be noted that, the definition in the present invention of this scheduled time is more than 30 minutes herein.
Seeing also shown in Figure 5ly, is that the master of one second preferred embodiment of the good infrared reflection plated film of explanation reliability of the present invention looks schematic diagram.One second preferred embodiment of the infrared reflection plated film 20 that reliability of the present invention is good, to be same as this first preferred embodiment haply, it does not exist together is to be, the good infrared reflection plated film 20 of the reliability of this second preferred embodiment of the present invention also comprises one second metal matrix rete structure 5.This second metal matrix rete structure 5 is folded in 4 on this buffer layer 3 and this first metal matrix rete structure.This second metal matrix rete structure 5 sequentially has a first metal layer 51 and one second metal level 52 from this buffer layer 3 towards the direction away from this transparent substrates 2.The first metal layer 51 of this second metal matrix rete structure 5 is made by Ag, the second metal level 52 of this second metal matrix rete structure 5 is that to be selected from the second metal of the following group that consists of by one made: Zn, Sn, Ti, Ni, ZnSn alloy, ZnTi alloy, ZnNi alloy, SnTi alloy, and SnNi alloy.
In addition, for the light source that effectively intercepts the infrared rays wave band and the light source of visible light wave range is penetrated, preferably, the thickness of the first metal layer 51 of this second metal matrix rete structure 5 is between between 14nm～32nm; The thickness of the second metal level 52 of this second metal matrix rete structure 5 is between between 44nm～60nm.
The making method of the infrared reflection plated film 20 that the reliability of this second preferred embodiment of the present invention is good is to be same as this first preferred embodiment haply, it does not exist together is to be, the making method of this second preferred embodiment is in the front step (b ') that also comprises of this step (b).This step (b ') is to form the second metal matrix rete structure 5 that this is folded in 4 on this buffer layer 3 and this first metal matrix rete structure.This second metal matrix rete structure 5 sequentially has this first metal layer 51 and this second metal level 52 from this buffer layer 3 towards the direction away from this transparent substrates 2.Before the first metal layer 51 of this second metal matrix rete structure 5 and the metallic substance of the second metal level 52 have been illustrated in, therefore no longer add to give unnecessary details at this.
Seeing also shown in Figure 6ly, is that the master of one the 3rd preferred embodiment of the good infrared reflection plated film of explanation reliability of the present invention looks schematic diagram.One the 3rd preferred embodiment of the infrared reflection plated film 20 that reliability of the present invention is good, to be same as this second preferred embodiment haply, it does not exist together is to be, this second metal matrix rete structure 5 of the present invention's the 3rd preferred embodiment also has one the 3rd metal level 53.The 3rd metal level 53 of this second metal matrix rete structure 5 is folded in 4 on the second metal level 52 of this second metal matrix rete structure 5 and this first metal matrix rete structure, and be that to be selected from the 3rd metal of the following group that consists of by one made: Al, AlTi alloy, AlNi alloy, and AlZn alloy.
It should be noted that, this first metal matrix rete structure 4 of the present invention and the second metal matrix rete structure 5 are made via magnetic control sputtering plating.The personnel that are familiar with the sputter correlation technique all know, when the inner background pressure (base pressure) of sputtering chamber (sputtering chamber) is excessive, will be in sputtering chamber aqueous vapor and the oxygen of residual minim, therefore, even if the plated film that is coated with is the pure metal film, also may contain the oxygen composition of trace in its pure metal film.Through above stated specification as can be known, be to allow the oxygen composition that contains trace in this first metal matrix rete structure 4 of the present invention and the second metal matrix rete structure 5.
See also shown in Figure 7, be the explanation the present invention use the infrared reflection plated film of those preferred embodiments to look schematic diagram with the part master who consists of an energy-saving glass device.Energy-saving glass device of the present invention comprises: one first element 200, one second element 6, and a distance piece 7.
This first element 200 has this transparent substrates 2, and this is formed at the good infrared reflection plated film 20 of reliability of those preferred embodiments on this transparent substrates 2.
This second element 6 has another transparent substrates 61, and this another transparent substrates 61 arranges towards this transparent substrates 2 and with these transparent substrates 2 intervals.
This distance piece 7 is folded in 6 of this first element 200 and the second elements, and jointly defines an enclosed space 8 with this first element 200 and the second element 6.In addition, this energy-saving glass device of the present invention also comprises a rare gas element that is placed into this enclosed space 8.
Should be noted that herein, technical characteristics of the present invention is to be, the first metal matrix rete structure 4 and the second metal matrix rete structure 5 of this infrared reflection plated film 20 are made by metallic substance, the packaged type of this energy-saving glass device belongs to the concept that these those skilled in the art know, be not technology emphasis of the present invention, therefore no longer add to give unnecessary details at this.
＜concrete example 1 (E1) 〉
One concrete example 1 (E1) of the infrared reflection plated film that reliability of the present invention is good is to implement according to this first preferred embodiment.
This concrete example 1 (E1) of the present invention is to use a magnetic control sputtering plating system sequentially to have the first metal matrix rete structure of a first metal layer, one second metal level and one the 3rd metal level sequentially to form a buffer layer and on a transparent substrates.In this concrete example 1 (E1) of the present invention, this transparent substrates is the general clear glass available from TaiWan, China glass industry stock company (Taiwan Glass Ind.Corp.), and the thickness of this transparent substrates and area are respectively 6mm and 10cm * 10cm; The first metal layer, the second metal level and the 3rd metal level of this buffer layer, this first metal matrix rete structure is respectively a Zn layer, an Ag layer, a Zn layer and an AlTi alloy layer, and thickness is respectively 20nm, 28nm, 20nm and 15nm.
Further, this transparent substrates that is formed with this buffer layer and the first metal matrix rete structure is on the carbon cloth that is placed in the vacuum cavity that an operating pressure is 0.5Torr, with the output rating of 1100W this buffer layer and the first metal matrix rete structure is bestowed 50 seconds nitrogen Microwave plasma treatment.In this concrete example 1 (E1) of the present invention, this carbon cloth is to be 3K T300B 1x1 plain weave 210g/m available from the model that toray (TORAY) company produces
2Carbon fiber.
＜concrete example 2 (E2) 〉
One concrete example 2 (E2) of the infrared reflection plated film that reliability of the present invention is good is to be same as this concrete example 1 (E1) haply, it does not exist together is to be, one second metal level of one first metal matrix rete structure of this concrete example 2 (E2) and the thickness of one the 3rd metal level are respectively 35nm and 7nm.
＜concrete example 3 (E3) 〉
One concrete example 3 (E3) of the infrared reflection plated film that reliability of the present invention is good is to be same as this concrete example 1 (E1) haply, it does not exist together is to be, a first metal layer of one first metal matrix rete structure of this concrete example 3 (E3) and the thickness of one second metal level are respectively 18nm and 10nm.
＜concrete example 4 (E4) 〉
One concrete example 4 (E4) of the infrared reflection plated film that reliability of the present invention is good is to be same as this concrete example 1 (E1) haply, and it does not exist together is to be, a buffer layer of this concrete example 4 (E4) is the TiO of a thickness 10nm
2Layer.
＜concrete example 5 (E5) 〉
One concrete example 5 (E5) of the infrared reflection plated film that reliability of the present invention is good is to be same as this concrete example 4 (E4) haply, and it does not exist together is to be, a buffer layer of this concrete example 5 (E5) is the SnO of a thickness 10nm
2Layer.
＜concrete example 6 (E6) 〉
The manufacturing conditions of one concrete example 6 (E6) of the infrared reflection plated film that reliability of the present invention is good is to be same as this concrete example 1 (E1) haply, and it does not exist together is to be, this concrete example 6 (E6) is to implement according to the 3rd preferred embodiment.In this concrete example 6 (E6), the good infrared reflection plated film of this reliability is sequentially to be formed with the second metal matrix rete structure that a buffer layer, sequentially has a first metal layer, one second metal level, one the 3rd metal level at a transparent substrates, and one sequentially has the first metal matrix rete structure of a first metal layer, one second metal level, one the 3rd metal level.Wherein, this buffer layer is a Zn layer, and thickness is 20nm; The first metal layer, the second metal level and the 3rd metal level of this second metal matrix rete structure is respectively an Ag layer, a Zn layer and an AlTi alloy layer, and thickness is respectively 28nm, 48nm and 3nm; The first metal layer, the second metal level and the 3rd metal level of this first metal matrix rete structure is respectively an Ag layer, a Zn layer and an AlTi alloy layer, and thickness is respectively 24nm, 15nm and 12nm.
＜concrete example 7 (E7) 〉
The making method of one concrete example 7 (E7) of the infrared reflection plated film that reliability of the present invention is good is to be same as this concrete example 6 (E6) haply, and it does not exist together is to be, this concrete example 7 (E7) be to implement according to this second preferred embodiment.In this concrete example 7 (E7) of the present invention, the good infrared reflection plated film of this reliability is sequentially to be formed with the second metal matrix rete structure that a buffer layer, sequentially has a first metal layer, one second metal level at a transparent substrates, and one sequentially has the first metal matrix rete structure of a first metal layer, one second metal level, one the 3rd metal level.Wherein, this buffer layer is a Zn layer, and thickness is 30nm; The first metal layer of this second metal matrix rete structure and the second metal level are respectively an Ag layer and a Zn layer, and thickness is respectively 24nm and 58nm; The first metal layer, the second metal level and the 3rd metal level of this first metal matrix rete structure is respectively an Ag layer, a Zn layer and an AlTi alloy layer, and thickness is respectively 18nm, 25nm and 5nm.
＜concrete example 8 (E8) 〉
One concrete example 8 (E8) of the infrared reflection plated film that reliability of the present invention is good is to be same as this concrete example 6 (E6) haply, and it does not exist together is to be, a buffer layer of this concrete example 8 (E8) is the TiO of a thickness 10nm
2Layer; The thickness of one second metal level of one second metal matrix rete structure of this concrete example 8 (E8) is 44nm; The thickness of one second and the 3rd metal level of one first metal matrix rete structure of this concrete example 8 (E8) is respectively 20nm and 20nm.
＜concrete example 9 (E9) 〉
One concrete example 9 (E9) of the infrared reflection plated film that reliability of the present invention is good is to be same as this concrete example 8 (E8) haply, and it does not exist together is to be, a buffer layer of this concrete example 9 (E9) is the SnO of a thickness 10nm
2Layer; The thickness of one second metal level of one second metal matrix rete structure of this concrete example 9 (E9) is 47nm.
(each buffer layer of E1～E9), each metal matrix rete structure and corresponding thickness thereof converge whole in lower tabulation 1. those concrete examples of the present invention simply.
Table 1.
| Concrete example | Buffer layer (nm) | The second metal matrix rete structure (nm) | The first metal matrix rete structure (nm) |
| E1 | Zn(20) | Ag(28)/Zn(20)/AlTi(15) | |
| E2 | Zn(20) | Ag(28)/Zn(35)/AlTi(7) | |
| E3 | Zn(20) | Ag(18)/Zn(10)/AlTi(15) | |
| E4 | TiO 2(10) | Ag(28)/Zn(20)/AlTi(15) | |
| E5 | SnO 2(10) | Ag(28)/Zn(20)/AlTi(15) | |
| E6 | Zn(20) | Ag(28)/Zn(48)/AlTi(3) | Ag(24)/Zn(15)/AlTi(12) |
| E7 | Zn(30) | Ag(24)/Zn(58) | Ag(18)/Zn(25)/AlTi(5) |
| E8 | TiO 2(10) | Ag(28)/Zn(44)/AlTi(3) | Ag(24)/Zn(20)/AlTi(20) |
| E9 | SnO 2(10) | Ag(28)/Zn(47)/AlTi(3) | Ag(24)/Zn(20)/AlTi(20) |
＜analytical data 〉
See also Fig. 8, Fig. 9, Figure 10, Figure 11, Figure 12, Figure 13, Figure 14, Figure 15, Figure 16, Figure 17 and shown in Figure 180, wherein, Fig. 8 is the penetration coefficient graphic representation of penetration coefficient of a concrete example 1 (E1) of the good infrared reflection plated film of explanation reliability of the present invention, Fig. 9 is the penetration coefficient graphic representation of penetration coefficient of a concrete example 2 (E2) of the good infrared reflection plated film of explanation reliability of the present invention, Figure 10 is the penetration coefficient graphic representation of penetration coefficient of a concrete example 3 (E3) of the good infrared reflection plated film of explanation reliability of the present invention, Figure 11 is the penetration coefficient graphic representation of penetration coefficient of a concrete example 4 (E4) of the good infrared reflection plated film of explanation reliability of the present invention, Figure 12 is the penetration coefficient graphic representation of penetration coefficient of a concrete example 5 (E5) of the good infrared reflection plated film of explanation reliability of the present invention, Figure 13 is the penetration coefficient graphic representation of penetration coefficient of a concrete example 6 (E6) of the good infrared reflection plated film of explanation reliability of the present invention, Figure 14 is the penetration coefficient graphic representation of penetration coefficient of a concrete example 7 (E7) of the good infrared reflection plated film of explanation reliability of the present invention, Figure 15 is the penetration coefficient graphic representation of penetration coefficient of a concrete example 8 (E8) of the good infrared reflection plated film of explanation reliability of the present invention, Figure 16 is the penetration coefficient graphic representation of penetration coefficient of a concrete example 9 (E9) of the good infrared reflection plated film of explanation reliability of the present invention, Figure 17 is the surface tissue SEM surface topography striograph of explanation this concrete example 6 (E6) of the present invention before Microwave plasma treatment, and Figure 18 is the SEM surface topography striograph of the surface tissue of explanation this concrete example 6 (E6) of the present invention behind Microwave plasma treatment.
By the shown penetration coefficient curve of Fig. 8 as can be known, this concrete example 1 (E1) of the present invention but at the maximum penetration rate convergence 65% of visible light wave range; In addition, the penetration coefficient at convergence 780nm place has dropped to 23%.
By the shown penetration coefficient curve of Fig. 9 as can be known, this concrete example 2 (E2) of the present invention but at the maximum penetration rate convergence 65% of visible light wave range; In addition, at the penetration coefficient convergence 30% at convergence 780nm place.
By the shown penetration coefficient curve of Figure 10 as can be known, this concrete example 3 (E3) of the present invention but at the maximum penetration rate convergence 80% of visible light wave range; In addition, at the penetration coefficient convergence 43% at convergence 780nm place.
By the shown penetration coefficient curve of Figure 11 as can be known, this concrete example 4 (E4) of the present invention has dropped to 51% in the maximum penetration rate of visible light wave range; In addition, the penetration coefficient at convergence 780nm place is about 22%.(E1～E3) compare obviously as can be known, (E1～E3) employed buffer layer is Zn to this concrete example 1～3 of the present invention to this concrete example 4 (E4), and it has the effect of lifting for the penetration coefficient in the visible light wave range with this concrete example 1～3.
By the shown penetration coefficient curve of Figure 12 as can be known, this concrete example 5 (E5) of the present invention also drops to 51% in the maximum penetration rate of visible light wave range; In addition, the penetration coefficient at convergence 780nm place is about 25%.(E1～E3) compare obviously as can be known, (E1～E3) employed buffer layer is Zn to this concrete example 1～3 of the present invention to this concrete example 5 (E5), and it has the effect of lifting for the penetration coefficient in the visible light wave range with this concrete example 1～3.
By the shown penetration coefficient curve of Figure 13 as can be known, this concrete example 6 (E6) of the present invention is in the maximum penetration rate of visible light wave range approximately 65%; In addition, the penetration coefficient at convergence 780nm place has dropped to 3%.(E1～E3) compare obviously as can be known is although this concrete example 5 of the present invention uses two-layer the first metal layer (namely, Ag) can effectively reduce the penetration coefficient of infrared rays wave band to this concrete example 6 (E6) with this concrete example 1～3; Yet, this concrete example 6 (E6) of the present invention because of those second metal levels (Zn) and the 3rd metal level (AlTi) so that the maximum penetration rate of its visible light wave range is maintained 65%.
By the shown penetration coefficient curve of Figure 14 as can be known, this concrete example 7 (E7) of the present invention is promoted to 70% in the maximum penetration rate of visible light wave range; In addition, in the penetration coefficient at convergence 780nm place approximately 20%; Be compared to this concrete example 6 (E6), the thickness of the two-layer the first metal layer (Ag) in this concrete example 7 (E7) is less, cause the penetration coefficient of infrared rays wave band higher, and the thickness of second metal level (Zn) of the second metal matrix rete structure of this concrete example 7 (E7) is higher, more so that the maximum penetration rate of its visible light is promoted to 70%, and the wavelength of its maximum penetration rate is offset to the 600nm place toward the low frequency direction.
By the shown penetration coefficient curve of Figure 15 as can be known, this concrete example 8 (E8) of the present invention is in the maximum penetration rate of visible light wave range approximately 68%; In addition, the penetration coefficient at convergence 780nm place is about 4%.
By the shown penetration coefficient curve of Figure 16 as can be known, this concrete example 9 (E9) of the present invention is in the maximum penetration rate of visible light wave range approximately 60%; In addition, the penetration coefficient at convergence 780nm place has dropped to 5%.
By the shown SEM image of Figure 17 (right side is graphic) as can be known, this concrete example 6 (E6) of the present invention is before the nitrogen Microwave plasma treatment, and its surface tissue is the approximately nanoparticle about 20nm～30nm of size; Review the shown SEM image of Figure 18 (right side is graphic) as can be known, this concrete example 6 (E6) of the present invention is behind the nitrogen Microwave plasma treatment, and its surface tissue is the approximately nanoparticle about 100nm～120nm of size.In addition, relatively the left side of Figure 17 and Figure 18 is as can be known graphic, the ultrapure water (ultr-pure water) that is shown in 5 μ l among Figure 17 is less with the contact angle (contact angle) of its first metal matrix rete body structure surface, and it is larger to be shown in the contact angle of the ultrapure water of 5 μ l among Figure 18 and its first metal matrix rete body structure surface.The surface that confirms this concrete example 6 (E6) is wetting ability (hydrophilic property) before the nitrogen Microwave plasma treatment, be easier to adsorb aqueous vapor, the surface of this concrete example 6 (E6) is to be hydrophobicity behind 30 minutes behind the nitrogen Microwave plasma treatment, and moisture content can be easily at its surface sliding, also confirm the surface of this concrete example 6 (E6) behind the nitrogen Microwave plasma treatment, because size produces lotus-effect (lotus effect) between the nanoparticle of 100nm～120nm.
Conclude the above, the making method of infrared reflection plated film, energy-saving glass device and plated film thereof that reliability of the present invention is good, promote the penetration coefficient of visible light by the second metal level of this first, second metal matrix rete structure, the problem of oxidation that can avoid existing transparent dielectric layer to produce; In addition, Microwave plasma treatment does not still promote the tack of infrared reflection plated film, makes its surface be hydrophobicity yet, thereby is conducive to intercept the reliability that increases the infrared reflection plated film that enters of aqueous vapor, so really can reach purpose of the present invention.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, although the present invention discloses as above with preferred embodiment, yet be not to limit the present invention, any those skilled in the art, within not breaking away from the technical solution of the present invention scope, when the method that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, any simple modification that foundation technical spirit of the present invention is done above embodiment, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (18)
1. the infrared reflection plated film that reliability is good is to be formed on the transparent substrates, it is characterized in that, this infrared reflection plated film comprises:
One deck is formed at the buffer layer on this transparent substrates; And
One deck is formed at the first metal matrix rete structure on this buffer layer, and this first metal matrix rete structure sequentially has one deck the first metal layer, one deck the second metal level and one deck the 3rd metal level from this buffer layer towards the direction away from this transparent substrates;
Wherein, the first metal layer of this first metal matrix rete structure is made by Ag;
Wherein, the second metal level of this first metal matrix rete structure is that to be selected from the second metal of the following group that consists of by one made: Zn, Sn, Ti, Ni, ZnSn alloy, ZnTi alloy, ZnNi alloy, SnT i alloy, and SnNi alloy; And
Wherein, the 3rd metal level of this first metal matrix rete structure is one deck barrier layer.
2. the good infrared reflection plated film of reliability as claimed in claim 1, it is characterized in that: the 3rd metal level of this first metal matrix rete structure is that to be selected from the 3rd metal of the following group that consists of by one made: Al, AlTi alloy, AlNi alloy, and AlZn alloy; This buffer layer is that to be selected from the material of the following group that consists of by one made: Zn, ZnO, SnO
2, and TiO
2
3. the good infrared reflection plated film of reliability as claimed in claim 2, it is characterized in that: the thickness of the first metal layer of this first metal matrix rete structure is between between 14nm～32nm; The thickness of the second metal level of this first metal matrix rete structure is between between 10nm～35nm.
4. the good infrared reflection plated film of reliability as claimed in claim 3, it is characterized in that: it also comprises one deck the second metal matrix rete structure, this the second metal matrix rete structure is folded between this buffer layer and this first metal matrix rete structure, this the second metal matrix rete structure sequentially has one deck the first metal layer and one deck the second metal level from this buffer layer towards the direction away from this transparent substrates, the first metal layer of this second metal matrix rete structure is made by Ag, the second metal level of this second metal matrix rete structure is that to be selected from the second metal of the following group that consists of by one made: Zn, Sn, Ti, Ni, the ZnSn alloy, the ZnTi alloy, the ZnNi alloy, SnTi alloy, and SnNi alloy.
5. the good infrared reflection plated film of reliability as claimed in claim 4, it is characterized in that: this second metal matrix rete structure also has one deck the 3rd metal level, the 3rd metal level of this second metal matrix rete structure is folded between second metal level and this first metal matrix rete structure of this second metal matrix rete structure, and be that to be selected from the 3rd metal of the following group that consists of by one made: Al, AlTi alloy, AlNi alloy, and AlZn alloy.
6. the good infrared reflection plated film of reliability as claimed in claim 4, it is characterized in that: the thickness of the first metal layer of this second metal matrix rete structure is between between 14nm～32nm; The thickness of the second metal level of this second metal matrix rete structure is between between 44nm～60nm.
7. an energy-saving glass device is characterized in that, it comprises:
First element, it has a transparent substrates, and one deck be formed on this transparent substrates such as the good infrared reflection plated film of the described reliability of arbitrary claim in the claim 1～6;
Second element has another transparent substrates, and this another transparent substrates arranges towards this transparent substrates and with this transparent substrates interval; And
A distance piece is folded in this first element and the second interelement, and jointly defines an enclosed space with this first element and this second element.
8. energy-saving glass device as claimed in claim 7 is characterized in that: it also comprises a rare gas element that is placed into this enclosed space.
9. the making method of the good infrared reflection plated film of a reliability is to be formed on the transparent substrates, it is characterized in that, this making method comprises following steps:
(a) form one deck buffer layer at this transparent substrates;
(b) form one deck the first metal matrix rete structure at this buffer layer, this first metal matrix rete structure sequentially has one deck the first metal layer, one deck the second metal level and one deck the 3rd metal level from this buffer layer towards the direction away from this transparent substrates; And
(c) after this step (b), this transparent substrates that is formed with this buffer layer and this first metal matrix rete structure is arranged in the substrate of a vacuum cavity, so that this buffer layer and this first metal matrix rete structure are bestowed Microwave plasma treatment, and promote the tack of this buffer layer and this first metal matrix rete structure;
Wherein, the first metal layer of this first metal matrix rete structure is made by Ag;
Wherein, the second metal level of this first metal matrix rete structure is that to be selected from the second metal of the following group that consists of by one made: Zn, Sn, Ti, Ni, ZnSn alloy, ZnTi alloy, ZnNi alloy, SnTi alloy, and SnNi alloy;
Wherein, the 3rd metal level of this first metal matrix rete structure is a barrier layer; And
Wherein, the substrate of this step (c) is that to be selected from the material of the following group that consists of by one made: carbon fiber, graphite and semiconductor material.
10. the making method of the good infrared reflection plated film of reliability as claimed in claim 9, it is characterized in that: the area of this substrate is the area more than or equal to the buffer layer on this transparent substrates, and more than or equal to the area of this first metal matrix rete structure, and the area of the buffer layer on the area of this substrate and this transparent substrates is overlapped, and overlapped with the area of this first metal matrix rete structure.
11. the making method of the infrared reflection plated film that reliability as claimed in claim 9 is good is characterized in that: when implementing this step (c), the operating pressure of this vacuum cavity is to be less than or equal to 0.5 holder.
12. the making method of the infrared reflection plated film that reliability as claimed in claim 11 is good is characterized in that: the Microwave plasma treatment of this step (c) is to provide a output rating between between 750W～2000W via a power supply unit.
13. the making method of the infrared reflection plated film that reliability as claimed in claim 9 is good is characterized in that: this semiconductor material is silicon.
14. the making method of the infrared reflection plated film that reliability as claimed in claim 9 is good, it is characterized in that: the 3rd metal level of this first metal matrix rete structure is that to be selected from the 3rd metal of the following group that consists of by one made: Al, AlTi alloy, AlNi alloy, and the AlZn alloy, and a surface of the 3rd metal level of this first metal matrix rete structure is to be hydrophobicity after the scheduled time behind the Microwave plasma treatment; This buffer layer is that to be selected from the material of the following group that consists of by one made: Zn, ZnO, SmO
2, and TiO
2
15. the making method of the infrared reflection plated film that reliability as claimed in claim 14 is good is characterized in that: the thickness of the first metal layer of this first metal matrix rete structure is between between 14nm～32nm; The thickness of the second metal level of this first metal matrix rete structure is between between 10nm～35nm.
16. the making method of the infrared reflection plated film that reliability as claimed in claim 15 is good, it is characterized in that: in the front step (b ') that also comprises of this step (b), this step (b ') be to form one deck to be folded in this buffer layer and interstructural the second metal matrix rete structure of this first metal matrix rete, this the second metal matrix rete structure sequentially has one deck the first metal layer and one deck the second metal level from this buffer layer towards the direction away from this transparent substrates, the first metal layer of this second metal matrix rete structure is made by Ag, the second metal level of this second metal matrix rete structure is that to be selected from the second metal of the following group that consists of by one made: Zn, Sn, Ti, Ni, the ZnSn alloy, the ZnTi alloy, the ZnNi alloy, SnTi alloy, and SnNi alloy.
17. the making method of the infrared reflection plated film that reliability as claimed in claim 16 is good, it is characterized in that: this second metal matrix rete structure also has one deck the 3rd metal level, the 3rd metal level of this second metal matrix rete structure is folded between second metal level and this first metal matrix rete structure of this second metal matrix rete structure, and be that to be selected from the 3rd metal of the following group that consists of by one made: Al, AlTi alloy, AlNi alloy, and AlZn alloy.
18. want the making method of the good infrared reflection plated film of 16 described reliabilities such as right, it is characterized in that: the thickness of the first metal layer of this second metal matrix rete structure is between between 14nm～32nm; The thickness of the second metal level of this second metal matrix rete structure is between between 44nm～60nm.
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Application publication date: 20130206 |