TW201303068A - 汽相沉積裝置、汽相沉積方法及製造有機發光顯示裝置之方法 - Google Patents
汽相沉積裝置、汽相沉積方法及製造有機發光顯示裝置之方法 Download PDFInfo
- Publication number
- TW201303068A TW201303068A TW101118418A TW101118418A TW201303068A TW 201303068 A TW201303068 A TW 201303068A TW 101118418 A TW101118418 A TW 101118418A TW 101118418 A TW101118418 A TW 101118418A TW 201303068 A TW201303068 A TW 201303068A
- Authority
- TW
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- Prior art keywords
- substrate
- plasma generator
- plasma
- vapor phase
- platform
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 119
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 710
- 238000002347 injection Methods 0.000 claims abstract description 352
- 239000007924 injection Substances 0.000 claims abstract description 352
- 238000005137 deposition process Methods 0.000 claims abstract description 55
- 239000010409 thin film Substances 0.000 claims abstract description 29
- 239000007789 gas Substances 0.000 claims description 289
- 239000012495 reaction gas Substances 0.000 claims description 122
- 239000010408 film Substances 0.000 claims description 103
- 238000001947 vapour-phase growth Methods 0.000 claims description 60
- 230000005484 gravity Effects 0.000 claims description 34
- 238000005538 encapsulation Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims 2
- 239000000376 reactant Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 136
- 238000004140 cleaning Methods 0.000 description 43
- 239000012535 impurity Substances 0.000 description 36
- 238000001179 sorption measurement Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 9
- 230000005611 electricity Effects 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 230000000704 physical effect Effects 0.000 description 8
- 239000002002 slurry Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45542—Plasma being used non-continuously during the ALD reactions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110069489A KR101288130B1 (ko) | 2011-07-13 | 2011-07-13 | 기상 증착 장치, 기상 증착 방법 및 유기 발광 표시 장치 제조 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201303068A true TW201303068A (zh) | 2013-01-16 |
Family
ID=46320770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101118418A TW201303068A (zh) | 2011-07-13 | 2012-05-23 | 汽相沉積裝置、汽相沉積方法及製造有機發光顯示裝置之方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8883267B2 (enExample) |
| EP (1) | EP2546386B1 (enExample) |
| JP (1) | JP6022242B2 (enExample) |
| KR (1) | KR101288130B1 (enExample) |
| CN (2) | CN102881550B (enExample) |
| TW (1) | TW201303068A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI690078B (zh) * | 2018-08-31 | 2020-04-01 | 大陸商昆山國顯光電有限公司 | 顯示面板及顯示裝置 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101288130B1 (ko) * | 2011-07-13 | 2013-07-19 | 삼성디스플레이 주식회사 | 기상 증착 장치, 기상 증착 방법 및 유기 발광 표시 장치 제조 방법 |
| DE102012219667A1 (de) * | 2012-10-26 | 2014-04-30 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und Verfahren zum Aufbringen einer Aluminiumoxidschicht auf ein Halbleitersubstrat |
| US20140342102A1 (en) * | 2013-05-20 | 2014-11-20 | Advantech Global, Ltd | Small Feature Size Fabrication Using a Shadow Mask Deposition Process |
| KR102651759B1 (ko) * | 2016-10-11 | 2024-03-29 | 삼성디스플레이 주식회사 | 증착장치 |
| CN108149225A (zh) * | 2018-02-06 | 2018-06-12 | 江苏微导纳米装备科技有限公司 | 一种真空反应装置及反应方法 |
| JP6929265B2 (ja) | 2018-12-13 | 2021-09-01 | キヤノン株式会社 | 有機発光装置とその製造方法、照明装置、移動体、撮像装置、電子機器 |
| KR102635841B1 (ko) * | 2020-10-13 | 2024-02-13 | 에이피시스템 주식회사 | 박막 제조 장치 및 방법 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US4664890A (en) * | 1984-06-22 | 1987-05-12 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Glow-discharge decomposition apparatus |
| JP2648684B2 (ja) * | 1993-01-13 | 1997-09-03 | 株式会社 半導体エネルギー研究所 | プラズマ気相反応装置 |
| TW349234B (en) * | 1996-07-15 | 1999-01-01 | Applied Materials Inc | RF plasma reactor with hybrid conductor and multi-radius dome ceiling |
| JP4089113B2 (ja) * | 1999-12-28 | 2008-05-28 | 株式会社Ｉｈｉ | 薄膜作成装置 |
| US6949450B2 (en) | 2000-12-06 | 2005-09-27 | Novellus Systems, Inc. | Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber |
| JP4770029B2 (ja) * | 2001-01-22 | 2011-09-07 | 株式会社Ｉｈｉ | プラズマｃｖｄ装置及び太陽電池の製造方法 |
| US6713127B2 (en) * | 2001-12-28 | 2004-03-30 | Applied Materials, Inc. | Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD |
| JP2003328126A (ja) * | 2002-05-09 | 2003-11-19 | Konica Minolta Holdings Inc | パターニング方法及び製膜装置 |
| JP2004055401A (ja) * | 2002-07-22 | 2004-02-19 | Sony Corp | 有機膜形成装置 |
| US20050145181A1 (en) | 2003-12-31 | 2005-07-07 | Dickinson Colin J. | Method and apparatus for high speed atomic layer deposition |
| US20060250084A1 (en) * | 2005-05-04 | 2006-11-09 | Eastman Kodak Company | OLED device with improved light output |
| KR101272321B1 (ko) * | 2005-05-09 | 2013-06-07 | 한국에이에스엠지니텍 주식회사 | 복수의 기체 유입구를 가지는 원자층 증착 장치의 반응기 |
| KR100760428B1 (ko) | 2005-05-13 | 2007-09-20 | 오재응 | 기상 증착 반응기 |
| US7348193B2 (en) * | 2005-06-30 | 2008-03-25 | Corning Incorporated | Hermetic seals for micro-electromechanical system devices |
| JP4949695B2 (ja) * | 2006-02-22 | 2012-06-13 | 三菱重工業株式会社 | 光電変換装置の製造装置および光電変換装置の製造方法 |
| EP2006888A4 (en) * | 2006-03-30 | 2011-11-09 | Mitsui Shipbuilding Eng | METHOD AND DEVICE FOR GROWING A PLASMAATOMIC LAYER |
| WO2008047549A1 (fr) * | 2006-10-12 | 2008-04-24 | Konica Minolta Holdings, Inc. | Substrat de film conducteur transparent et procédé de formation d'un film conducteur transparent à base d'oxyde de titane destiné à être utilisé avec celui-ci |
| US20080241384A1 (en) * | 2007-04-02 | 2008-10-02 | Asm Genitech Korea Ltd. | Lateral flow deposition apparatus and method of depositing film by using the apparatus |
| JP2009024224A (ja) * | 2007-07-20 | 2009-02-05 | Konica Minolta Holdings Inc | 炭素膜形成方法 |
| TW200927983A (en) | 2007-12-21 | 2009-07-01 | Ind Tech Res Inst | Atmospheric pressure plasma processing apparatus |
| JP5215685B2 (ja) * | 2008-02-14 | 2013-06-19 | 三井造船株式会社 | 原子層成長装置 |
| KR101006583B1 (ko) | 2008-07-28 | 2011-01-07 | 신웅철 | 수평 배치형 원자층 증착 장치 |
| US8851012B2 (en) | 2008-09-17 | 2014-10-07 | Veeco Ald Inc. | Vapor deposition reactor using plasma and method for forming thin film using the same |
| KR101226426B1 (ko) * | 2008-09-17 | 2013-01-24 | 시너스 테크놀리지, 인코포레이티드 | 플라즈마를 이용한 기상 증착 반응기 및 이를 이용한 박막 형성 방법 |
| KR101097321B1 (ko) * | 2009-12-14 | 2011-12-23 | 삼성모바일디스플레이주식회사 | 유기 발광 장치 및 이의 제조 방법 |
| KR101288130B1 (ko) * | 2011-07-13 | 2013-07-19 | 삼성디스플레이 주식회사 | 기상 증착 장치, 기상 증착 방법 및 유기 발광 표시 장치 제조 방법 |
-
2011
- 2011-07-13 KR KR1020110069489A patent/KR101288130B1/ko active Active
-
2012
- 2012-03-27 US US13/431,880 patent/US8883267B2/en active Active
- 2012-05-23 TW TW101118418A patent/TW201303068A/zh unknown
- 2012-05-23 EP EP12169161.2A patent/EP2546386B1/en active Active
- 2012-07-11 JP JP2012155181A patent/JP6022242B2/ja active Active
- 2012-07-12 CN CN201210241887.4A patent/CN102881550B/zh active Active
- 2012-07-12 CN CN2012203384828U patent/CN202808936U/zh not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI690078B (zh) * | 2018-08-31 | 2020-04-01 | 大陸商昆山國顯光電有限公司 | 顯示面板及顯示裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN202808936U (zh) | 2013-03-20 |
| US20130017343A1 (en) | 2013-01-17 |
| US8883267B2 (en) | 2014-11-11 |
| KR20130008853A (ko) | 2013-01-23 |
| EP2546386B1 (en) | 2018-01-03 |
| CN102881550A (zh) | 2013-01-16 |
| CN102881550B (zh) | 2017-03-01 |
| JP6022242B2 (ja) | 2016-11-09 |
| KR101288130B1 (ko) | 2013-07-19 |
| JP2013019053A (ja) | 2013-01-31 |
| EP2546386A1 (en) | 2013-01-16 |
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