JP6022242B2 - 気相蒸着装置、気相蒸着方法及び有機発光表示装置の製造方法 - Google Patents
気相蒸着装置、気相蒸着方法及び有機発光表示装置の製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 138
- 238000007740 vapor deposition Methods 0.000 title claims description 77
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims description 474
- 238000002347 injection Methods 0.000 claims description 415
- 239000007924 injection Substances 0.000 claims description 415
- 239000007789 gas Substances 0.000 claims description 323
- 230000008569 process Effects 0.000 claims description 121
- 239000010409 thin film Substances 0.000 claims description 104
- 239000012495 reaction gas Substances 0.000 claims description 61
- 230000005484 gravity Effects 0.000 claims description 34
- 238000000151 deposition Methods 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 109
- 238000010926 purge Methods 0.000 description 56
- 239000012535 impurity Substances 0.000 description 32
- 239000010408 film Substances 0.000 description 25
- 238000005019 vapor deposition process Methods 0.000 description 21
- 238000010438 heat treatment Methods 0.000 description 16
- 238000000427 thin-film deposition Methods 0.000 description 13
- 230000007423 decrease Effects 0.000 description 10
- 238000005137 deposition process Methods 0.000 description 9
- 238000001179 sorption measurement Methods 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- 238000002161 passivation Methods 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45542—Plasma being used non-continuously during the ALD reactions
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
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- Chemical Kinetics & Catalysis (AREA)
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- Plasma & Fusion (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Chemical Vapour Deposition (AREA)
Description
30, 101, 201, 401, 402, 401, 402, 601, 601, 801, 802, 801, 802 基板
31 バッファ層
32 ゲート絶縁膜
33 層間絶縁膜
34 パッシベーション膜
35 画素定義膜
40 薄膜トランジスタ
41 活性層
42 ゲート電極
43 ソース/ドレイン電極
50 キャパシタ
51 下部電極
52 上部電極
60 有機発光素子
61 第1電極
62 第2電極
63 中間層
64 開口
70 封止層
100, 200, 400, 400, 600, 600, 800, 800 気相蒸着装置
110, 210, 410, 410, 610, 610, 810, 810 チャンバ
111, 211, 411, 411, 611, 611, 811, 811 排気口
120, 220, 420, 420, 620, 620, 820, 820 ステージ
121 蒸着面
130, 230, 430, 430, 630, 630, 830, 830 注入部
131 第1注入ホール
132 第2注入ホール
180, 280, 481, 482, 481, 482, 680, 680, 881, 882, 881, 882 プラズマ発生部
180a,180b,180c,180d,180e モジュール
181 第1プラズマ電極
182 第2プラズマ電極
183 供給口
184 空間
185 取出口
Claims (18)
- 基板に薄膜を蒸着するための気相蒸着装置であって、
排気口を具備するチャンバと、
前記チャンバ内に配置され、前記基板を装着するように装着面を具備するステージと、
前記基板の薄膜が形成される平面方向と平行にソースガスを注入する少なくとも一つ以上の注入ホールを具備する注入部と、
前記基板と対向し、前記基板と離隔するように配置されるプラズマ発生部と、
前記チャンバ内で、前記基板が前記ステージに装着された状態で、前記基板及び前記プラズマ発生部を移動させるように、前記ステージ及び前記プラズマ発生部を駆動する駆動部と、を含み、前記駆動部は、前記ステージ及び前記プラズマ発生部を同時に移動することを特徴とする気相蒸着装置。 - 前記プラズマ発生部は、プラズマを発生する反応ガスを注入する供給部、第1プラズマ電極、第2プラズマ電極及び取出口を具備することを特徴とする請求項1に記載の気相蒸着装置。
- 前記第1プラズマ電極と第2プラズマ電極との間でプラズマが発生し、前記プラズマは、前記取出口を介して、前記基板に向かって進むことを特徴とする請求項2に記載の気相蒸着装置。
- 前記プラズマ発生部は、複数のモジュールを具備し、
前記各モジュールは、前記反応ガスを注入する供給部、第1プラズマ電極、第2プラズマ電極及び取出口を具備することを特徴とする請求項2に記載の気相蒸着装置。 - 前記プラズマ発生部は、前記基板と平行に配置されたことを特徴とする請求項1に記載の気相蒸着装置。
- 前記プラズマ発生部は、前記基板に対応するように、前記基板と同サイズであるか、あるいは前記基板より大きく形成されたことを特徴とする請求項1に記載の気相蒸着装置。
- 前記基板上に所望のパターンで蒸着するための開口部を具備するマスクをさらに含み、前記マスクは、基板上に配置されることを特徴とする請求項1に記載の気相蒸着装置。
- 前記ステージは、複数の基板を装着するように、複数の装着面を具備することを特徴とする請求項1に記載の気相蒸着装置。
- 前記複数の装着面は、互いに平行に配置されることを特徴とする請求項8に記載の気相蒸着装置。
- 前記複数の装着面は、前記ステージの一面及びその反対面に形成されたことを特徴とする請求項8に記載の気相蒸着装置。
- 前記複数の装着面に配置される基板に対応するように、複数のプラズマ発生部が配置されることを特徴とする請求項8に記載の気相蒸着装置。
- 前記駆動部は、前記基板が前記ステージに装着された状態で、前記基板の薄膜が形成される平面方向と垂直方向に移動するように、前記ステージ及び前記プラズマ発生部を移動させることを特徴とする請求項1に記載の気相蒸着装置。
- 前記駆動部は、往復動することを特徴とする請求項1に記載の気相蒸着装置。
- 前記駆動部は、前記ステージを移動させる第1駆動部、及び前記プラズマ発生部を移動させる第2駆動部を具備することを特徴とする請求項1に記載の気相蒸着装置。
- 前記装着面は、重力が作用する方向と平行に配置されることを特徴とする請求項1に記載の気相蒸着装置。
- 前記注入部は、地面から前記ステージより遠く離れるように配置されたことを特徴とする請求項1に記載の気相蒸着装置。
- 基板に薄膜を蒸着するための気相蒸着方法であって、
チャンバ内に配置されるステージの装着面に、基板を装着する段階と、
前記基板と対向するように配置されたプラズマ発生部と前記基板との間の空間に、注入部を介して、前記基板の薄膜が形成される平面方向と平行にソースガスを注入する段階と、
前記チャンバの排気口を介して、排気工程を遂行する段階と、
前記プラズマ発生部を介して、前記基板に向かうようにプラズマを発生する段階と、
前記チャンバ内で、前記基板が前記ステージに装着された状態で、前記基板及び前記プラズマ発生部を移動させるように、前記ステージ及び前記プラズマ発生部を駆動部で駆動し、前記駆動部は、前記ステージ及び前記プラズマ発生部を同時に移動する段階と、
前記チャンバの排気口を介して、排気工程を遂行する段階と、を含む気相蒸着方法。 - 基板上に少なくとも第1電極、有機発光層を具備する中間層、第2電極を具備する薄膜を含む有機発光表示装置を製造する方法であって、
前記薄膜を形成する段階は、
チャンバ内に配置されるステージの装着面に、基板を装着する段階と、
前記基板と対向するように配置されたプラズマ発生部と前記基板との間の空間に、注入部を介して、前記基板の薄膜が形成される平面方向と平行にソースガスを注入する段階と、
前記チャンバの排気口を介して、排気工程を遂行する段階と、
前記プラズマ発生部を介して、前記基板に向かうようにプラズマを発生する段階と、
前記チャンバ内で、前記基板が前記ステージに装着された状態で、前記基板及び前記プラズマ発生部を移動させるように、前記ステージ及び前記プラズマ発生部を駆動部で駆動し、前記駆動部は、前記ステージ及び前記プラズマ発生部を同時に移動する段階と、
前記チャンバの排気口を介して、排気工程を遂行する段階と、を含む有機発光表示装置の製造方法。
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KR1020110069489A KR101288130B1 (ko) | 2011-07-13 | 2011-07-13 | 기상 증착 장치, 기상 증착 방법 및 유기 발광 표시 장치 제조 방법 |
KR10-2011-0069489 | 2011-07-13 |
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DE102012219667A1 (de) * | 2012-10-26 | 2014-04-30 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und Verfahren zum Aufbringen einer Aluminiumoxidschicht auf ein Halbleitersubstrat |
US20140342102A1 (en) * | 2013-05-20 | 2014-11-20 | Advantech Global, Ltd | Small Feature Size Fabrication Using a Shadow Mask Deposition Process |
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CN108149225A (zh) * | 2018-02-06 | 2018-06-12 | 江苏微导纳米装备科技有限公司 | 一种真空反应装置及反应方法 |
CN109148728B (zh) * | 2018-08-31 | 2019-10-29 | 昆山国显光电有限公司 | 一种显示面板及显示装置 |
JP6929265B2 (ja) | 2018-12-13 | 2021-09-01 | キヤノン株式会社 | 有機発光装置とその製造方法、照明装置、移動体、撮像装置、電子機器 |
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- 2012-05-23 TW TW101118418A patent/TW201303068A/zh unknown
- 2012-05-23 EP EP12169161.2A patent/EP2546386B1/en active Active
- 2012-07-11 JP JP2012155181A patent/JP6022242B2/ja active Active
- 2012-07-12 CN CN201210241887.4A patent/CN102881550B/zh active Active
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JP2013019053A (ja) | 2013-01-31 |
CN102881550A (zh) | 2013-01-16 |
KR20130008853A (ko) | 2013-01-23 |
US20130017343A1 (en) | 2013-01-17 |
EP2546386B1 (en) | 2018-01-03 |
US8883267B2 (en) | 2014-11-11 |
CN102881550B (zh) | 2017-03-01 |
EP2546386A1 (en) | 2013-01-16 |
KR101288130B1 (ko) | 2013-07-19 |
TW201303068A (zh) | 2013-01-16 |
CN202808936U (zh) | 2013-03-20 |
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