201248752 六、發明說明： 【發明所屬之技術領域】 本發明係屬於一種蝕刻深度量測方法及其裝置，其係 一種可直接且準確地對於蝕刻的深度進行量測的蝕刻深度 量測方法及其裝置者。 【先前技術】 按’蚀刻製程係為半導體產業中非常重要的—項技 術’其中對於姓刻深度的控制，既有的蝕刻方法主要係透 過糸統參數搭配時間的方式，達到控制蝕刻深度的目的， 然而，既有的蝕刻方法係透過間接的估算方式推算出蝕刻 的’衣度，無法直接對於蝕刻加工的物件進行量測，相對會 有產生一定程度的誤差，誠有加以改進之處。 L發明内容】 本發明人有鑑於既有姓刻無法直接量測深度的缺點與 :足’本發明係透過精簡的結構配置方式，提供 接且準確量測姓刻深度的姓刻深度量測方法及其裝置。 :發明主要在於提供一種蝕刻深度 置，其係提供一可括俨工π 久卉眾 t] 衣兄干擾、高解析度且直接量測的蝕 刻深度量測方法及其裝置之目的者。 為達上述目的，本發明的少丨 含右以丁 ^ 發月的姓刻深度量測方法’立俜自 3有以下的操作步驟： ”计，a 儀器準備：準備一 液，該量測裝置設有— 該光纖用以傳輸—光源 里測裝置、一待蝕刻基材及一蝕刻 "鐵 臺測頭及一訊號處理組， ’该5測頭係與該傳輸線相連接且 201248752 設有一保護殼及一共光程干涉儀’該保護殼於底部設有_ 供光線穿透的穿透鏡’該共光程干涉儀係與該光纖相連接 且設於該保護殼内並設有一光感測器，該訊號處理組係與 該光感測器相電性連接，用以接收該光感測器所偵測到的 干涉δίΐ號，而該蚀刻液係用以於該待姓刻基材表面|虫刻出 所需的幾何結構； 量測操作：將該待姓刻基材浸泡於該钱刻液中，且將 該量測頭設有穿透鏡的一端插入該蝕刻液中並朝向該待蝕 刻基材的表面，使光源經該共光程干涉儀及該穿透鏡而射 入该待蝕刻基材的表面並反射回該共光程干涉儀中，使該 待蝕刻基材表面與該共光程干涉儀之間形成一共振腔，讓 該光感測益接收該共光程干涉儀與該待蝕刻基材表面之間 干涉條紋的訊號；以及 ^ 訊號處理：透過該光感測器接收干涉訊號後，經由該 虎处理組進行訊號處理，可得到干涉條紋的光振幅及光 > θ ▲進而推异出該反射光的光強度，由該光強度可推算 这錢膜鏡片與該待㈣基材表面的間⑬，進而直接得到該 蝕刻’夜於該待蝕刻基材表面的蝕刻深度。 乎 V在儀器準備的操作步驟中，使用一 Fabry-Perot ， 為該共光程干涉儀’該Fabry-Perot干涉儀設有一 光纖準直鏡、—％ —偏振分光鏡、一鍍膜鏡片、一相位延遲片 及 ' —光减、、則。0 比 '、益’使該傳輸線傳送的光源依序經由光纖準直 叙、偏振分央# ^ ’見、渡膜鏡片、相位延遲片而朝該穿透鏡射 出，而兮歹>Li rV' 、 J /則器係接收由該偏振分光鏡分射的另一道光 5 201248752 、 ' v 在臺測的操作的操作步驟中，將該射出穿 '光源射於6亥待蝕刻基材的表面，使光源反射回該相 '片而轉換為一偏振光並射向該鍍膜鏡片，藉以於該 感測器處形成_ + 牛μ & , ^ 干涉讯唬並使該待蝕刻基材表面與該鍍膜 鏡片之間形成一此拓跡 八振L ’而使該偏振光束在該鍍膜鏡片與 §亥待姓刻基材轰面夕pq才 录面之間來回的反射與透射後產生複數條干 涉條紋》 ‘本發月另提供-種蝕刻深度量測裝置，其係包含有一 光纖、一量測頭及一訊號處理組，其中： 該光纖係用以傳輸一光源； 、, 量則頭如與泫傳輸線相連接且設有一保護殼及一共 光：干涉$ ’該保護殼底部設有一供光線穿透的穿透鏡， U私干涉儀係與該光纖相連接且設有一光感測器；以 及 Λ扎諕處理組係與該共光程干涉儀的光感測器相電性 連接，用以接收該光感測器所偵測到的干涉訊號。 進y "亥共光程干涉儀係為一Fabry-Perot干涉儀且 «又有光’截準直鏡、一偏振分光鏡、一鍍膜鏡片及一相位 延=片’纟中該光纖準直鏡係設於該保護殼内且朝向該穿 透叙m纖傳送的光源可經該光纖準直鏡*朝該穿透 鏡射出，該偏振分光鏡係設於該光纖準直鏡及該穿透鏡之 間，藉以將δ亥光源分為兩道光束’該鍍膜鏡片設於該偏振 '兄及。玄穿透叙之間，使其中一道光束可相對該鍍膜鏡 片產生反射與穿射’而該相位延遲片係設於該錢膜鏡片及 該穿透鏡之間，用以將該穿透鍍膜鏡片的光束轉換並朝該 6 201248752 穿透鏡射出，而該共光 1 V 1找的光感測器得邙於# 分光鏡的另-側並接收另—道光束。 m玄偏振 再進一步’該相位延遲片係 藉由上述的技術手π，士欠 刀之—相位延遲片〇 又本土明的着虫刻深度量，、則方本好 其裝置，主要係透過於 又里測方法及 、％ »玄置測頭内設置一並 方式，不僅具有較佳的浐s " 干α儀的201248752 VI. Description of the Invention: [Technical Field] The present invention relates to an etching depth measuring method and apparatus thereof, which is an etching depth measuring method capable of directly and accurately measuring the depth of etching and Device. [Prior Art] According to the 'etching process system is a very important technology in the semiconductor industry', in the control of the depth of the surname, the existing etching method mainly achieves the purpose of controlling the etching depth by means of the time and time of the system. However, the existing etching method is based on indirect estimation to calculate the degree of etching, and it is impossible to directly measure the etched object, and there is a certain degree of error, which is improved. SUMMARY OF THE INVENTION The inventors have the disadvantage that the existing surname cannot directly measure the depth and the foot of the present invention provides a method for measuring the depth of the surname by accurately and accurately measuring the depth of the surname through a simplified structural configuration. And its equipment. The invention is mainly directed to providing an etch depth, which is intended to provide an etch depth measurement method and apparatus for the interference, high resolution and direct measurement of the π 卉 卉 t. In order to achieve the above object, the method of measuring the depth of the sputum of the present invention containing the right 丁 ^ 发 ' ' ' ' ' ' ' ' 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 ” ” ” ” ” Provided - the optical fiber is used for transmission - light source measuring device, a substrate to be etched and an etching "iron table probe and a signal processing group, 'the 5 probe is connected to the transmission line and 201248752 has a protection a shell and a total optical path interferometer 'the protective shell is provided at the bottom with a light-transmitting lens. The common optical path interferometer is connected to the optical fiber and disposed in the protective shell and is provided with a light sensing The signal processing group is electrically connected to the photo sensor for receiving the interference δ ΐ 侦测 detected by the photo sensor, and the etching liquid is used for the surface of the substrate to be surnamed Insecting the desired geometry; measuring operation: soaking the substrate to be surnamed in the money engraving liquid, and inserting one end of the measuring head with the lens into the etching liquid and facing the The surface of the substrate to be etched is such that the light source is emitted through the common optical path interferometer and the through lens Entering the surface of the substrate to be etched and reflecting back into the common optical path interferometer, forming a resonant cavity between the surface of the substrate to be etched and the common optical path interferometer, and allowing the light sensing to receive the common light a signal of interference fringes between the interferometer and the surface of the substrate to be etched; and a signal processing: after receiving the interference signal through the photo sensor, performing signal processing through the tiger processing group, the optical amplitude of the interference fringe is obtained Light > θ ▲ further extracts the light intensity of the reflected light, and the light intensity can be used to estimate the space between the film lens and the surface of the substrate to be (13), thereby directly obtaining the etching to the substrate to be etched Etching depth of the surface. V is used in the operational steps of the instrument, using a Fabry-Perot for the common optical path interferometer. The Fabry-Perot interferometer is provided with a fiber collimating mirror, a %-polarizing beam splitter, and a Coated lens, a phase retarder and '-light subtraction, then. 0 ratio', benefit' makes the light source transmitted by the transmission line sequentially through the fiber collimation, polarization centering #^' see, film lens, phase delay Film and penetrate Shooting, and 兮歹>Li rV', J / then receive another light split by the polarizing beam splitter 5 201248752, 'v in the operation step of the station test operation, the shot is shot through the 'light source The surface of the substrate is to be etched at 6 amps, and the light source is reflected back to the phase sheet to be converted into a polarized light and directed to the coated lens, thereby forming a _ + 牛 μ & ^ interference signal at the sensor And forming a trace eight-ray L′ between the surface of the substrate to be etched and the coated lens, so that the polarized light beam is circulated back and forth between the coated lens and the surface of the substrate. The reflection and transmission generate a plurality of interference fringes. The present invention further provides an etching depth measuring device comprising an optical fiber, a measuring probe and a signal processing group, wherein: the optical fiber is used for transmitting The light source; and the measuring head are connected to the 泫 transmission line and provided with a protective shell and a common light: interference: the bottom of the protective shell is provided with a light-transmitting lens, and the U private interferometer is connected to the optical fiber. And a light sensor; and the Λ 諕 processing group and the The optical sensor of the common optical path interferometer is electrically connected to receive the interference signal detected by the optical sensor. Into the y "Haiguang optical path interferometer is a Fabry-Perot interferometer and «also has a light's collimating mirror, a polarizing beam splitter, a coated lens and a phase extension = sheet '纟 in the fiber collimation A light source disposed in the protective casing and directed toward the through-beam can be emitted through the fiber collimating mirror* toward the lens, the polarizing beam splitter is disposed on the fiber collimating mirror and the penetrating Between the mirrors, the δ hai light source is divided into two beams 'the coated lens is set at the polarization 'brother. Between the sinus and the sinus, one of the beams can be reflected and penetrated relative to the coated lens, and the phase retarder is disposed between the lens and the lens for the through-coated lens The beam is converted and directed toward the 6 201248752 lens, and the photosensor of the common light 1 V 1 is obtained on the other side of the # beamsplitter and receives another beam. m Xuan Polarization goes a step further. The phase retardation film is made by the above-mentioned technique, π, the knives of the knife, the phase retarder, and the local depth of the insect, and the device is mainly used. In addition, the measurement method and the %»Xuanjian probe are set together in a way that not only has better 浐s "
几衣丨兄^動能力，且可直接且即時 地堇測待蝕刻基材的蝕刻# T f 、…祉 错以提升蝕刻製程的正確 牛，進而提供一可抗璟户工 一 …曰… 兄干擾、南解析度且直接量測之钱 刻冰度S測方法及其裝置者。 【實施方式】 為能詳細瞭解本發明的技術特徵及實用功效，並可依 照說明書的内容來實施’兹進一步以如圖式所示的較佳實 施例，詳細說明如户，士天义Da _ ° ^月之蝕刻深度量測方法及其裝 置，其中請參閱如® ’所示’本發明係，刻深度量測 方法，該蝕刻深度量測方法係包含有： /㈧、儀器準備：如圖2及3所示準備-量測裝置10、 -待蝕刻基材20及一蝕刻液3〇,其中該量測裝置係設有一 光纖11、一量測頭12及一訊號處理組，3，其中該光纖，， 係用以傳輸-光源川，該量測頭12係與該傳輸線^相 連接且設有一保護殼14及_共光程干涉儀15，該保護殼 14係為中空忒體且於底部設有一供光線穿透的穿透鏡 141’該共光程干涉儀15係與該光纖w相連接且為一具有 較佳的抗環境擾動能力的Fabry-Perot干涉儀，該A few coats of brothers and brothers, and can directly and immediately detect the etching of the substrate to be etched #T f , ... 祉 wrong to improve the correct process of the etching process, and then provide a resistance to the household workers... 曰... Interference, south resolution and direct measurement of the method of measuring the ice degree S and its device. [Embodiment] In order to understand the technical features and practical effects of the present invention in detail, and in accordance with the contents of the specification, the present invention will be further described in detail with reference to the preferred embodiment shown in the drawings. ° ^ month etching depth measurement method and its device, wherein please refer to the system of the invention as shown in the '', the depth measurement method, the etching depth measurement method includes: / (eight), instrument preparation: as shown 2 and 3, the measuring device 10, the substrate 20 to be etched, and an etching solution 3, wherein the measuring device is provided with an optical fiber 11, a measuring probe 12 and a signal processing group, 3 The optical fiber is connected to the transmission source, and the measuring head 12 is connected to the transmission line and is provided with a protective shell 14 and a common optical path interferometer 15, which is a hollow body and The bottom portion is provided with a light-transmitting lens 141'. The common optical path interferometer 15 is connected to the optical fiber w and is a Fabry-Perot interferometer with better environmental disturbance resistance.
Fabry-Perot干涉儀設有一光纖準直鏡151、—偏振分光鏡 7 1 52、一鍍膜鏡片ί 53、一相位延遲片）54及一光感測器 201248752 1 5 5，其中該光纖準直鏡1 51係設於該保護殼’ 4内且朝向 該穿透鏡141,使該光纖11傳送的光源111(p_type線偏振 光）可經該光纖準直鏡1 51而朝該穿透鏡141射出，該偏振 分光鏡152係設於該光纖準直鏡151及該穿透鏡141之 間’藉以將s玄光源111分為兩道光束’該錄膜鏡片1 5 3的 反射率為R%、穿透率為T%(其中R及丁係為一參數）且設 於s亥偏振分光鏡152及§亥穿透鏡141之間，使其中一道光 束可相對s玄链膜鏡片1 5 3產生反射與穿射，而該相位延遲 片154係設於該鍍膜鏡片153及該穿透鏡141之間，用以 將該穿透鍍膜鏡片1 53的光束轉換為一圓偏振光束並朝該 穿透鏡141射出，較佳地，該相位延遲片154係為一四分 之一相位延遲片，可有效避免逆回光束的干擾，藉以提高 該Fabry-Perot干涉儀的解析度，而該光感測器155係設於 該偏振分光鏡1 52的另一側並接收另—道光束，該訊號處 理組13係與該光感測器155相電性連接，用以接收該光感 測器1 55所偵測到的干涉訊號，而該待姓刻基材2〇表面的 反射率為R /。（其中違R係為一參數）’而該触刻液係用 以在該待蝕刻基材20表面蝕刻出所需的幾何結構； (B)、量測操作：如圖3所示將該待蝕刻基材2〇浸泡 於該蝕刻液30中’且將該量測頭12設有穿透鏡141的一 端插入該㈣液3Q中並朝向該待㈣基材2()的表面，使 經》亥相位延遲# 1 54轉換的圓偏振光束如圖4所示射於該 待姓刻基材20的表面’並反射回該相位延遲片，54而轉換 為一偏振光（s-type)並射向該鍍膜鏡片153 ,其中部分穿射 過5玄鍍膜鏡片153的偏振光會經過該偏振分光鏡152反射 201248752 後進入忒光感測益1 55處而形成一干涉訊號，而另一部分 反射於該鍍膜鏡片153的偏振光束則再次射入該相位延^ 片1 54中而改變其偏振狀態，使該待蝕刻基材2〇表面與該 鍍膜鏡片1 53之間形成一共振腔，進而使該偏振光束在該 鍍膜鏡片1 53與該待蝕刻基材2〇表面之間來回的反射與透 射後產生複數條干涉條紋；以及 (c)、訊號處理：透過該光感測器]55接收干涉訊號後， 經由該訊號處理組1 3進行訊號處理，可得到反射光的光振 幅（A)及光電場（E)，進而推算出反射光的光強度（丨），再由反 射光的光強度可推得出該共振腔的間距（d )，其中該光振幅 方程式、光電場方程式及光強度方程式係分別如下所示： An = A0TR，n/2R(1/2)(n-1)............ ...................(1) 其中A〇為入射光振幅，R為鍍膜鏡片彳53反射率，丁 為鍍膜鏡片153的穿透率（理想狀態·fy-R)，R，為待蝕刻基 材20的反射率。 E = Axcos(wt+ kr) = A0xTxei(wt+kr)xR，（1/2)xei. 5/1R，xRxThe Fabry-Perot interferometer is provided with a fiber collimating mirror 151, a polarization beam splitter 7 1 52, a coated lens ί 53, a phase retarder 54 and a photo sensor 201248752 1 5 5, wherein the fiber collimating mirror 1 51 is disposed in the protective case '4 and faces the through lens 141, and the light source 111 (p_type linearly polarized light) transmitted by the optical fiber 11 can be emitted toward the through lens 141 via the optical fiber collimating mirror 51. The polarization beam splitter 152 is disposed between the fiber collimating mirror 151 and the through lens 141 to "divide the s-spot light source 111 into two beams". The reflectivity of the film lens 153 is R%. The transmittance is T% (where R and D is a parameter) and is disposed between the s-polarizing beam splitter 152 and the §-through lens 141, so that one of the beams can be generated relative to the s-chain lens 1 53 Reflecting and penetrating, the phase retarder 154 is disposed between the coated lens 153 and the through lens 141 for converting the beam of the penetrating coated lens 153 into a circularly polarized beam and facing the lens The 141 is emitted. Preferably, the phase retarder 154 is a quarter-phase retarder, which can effectively avoid interference of the reverse beam. In order to improve the resolution of the Fabry-Perot interferometer, the photo sensor 155 is disposed on the other side of the polarization beam splitter 152 and receives another beam, and the signal processing group 13 is coupled to the light sensor. The device 155 is electrically connected to receive the interference signal detected by the photo sensor 155, and the reflectivity of the surface of the substrate 2 to be surnamed is R / . (wherein R is a parameter) and the etchant is used to etch the desired geometry on the surface of the substrate 20 to be etched; (B), measurement operation: as shown in FIG. The etched substrate 2 is immersed in the etchant 30' and the end of the measuring head 12 provided with the lens 141 is inserted into the (4) liquid 3Q and faces the surface of the substrate (4) to be The phase-shifted #1 54 converted circularly polarized beam is incident on the surface of the substrate 20 to be surnamed as shown in FIG. 4 and is reflected back to the phase retarder, 54 and converted into a s-type and shot. To the coated lens 153, a portion of the polarized light that has passed through the 5th coated lens 153 passes through the polarizing beam splitter 152 and is reflected by the polarizing beam splitter 152 to enter the calming sensor 1 55 to form an interference signal, and the other portion is reflected in the The polarized light beam of the coated lens 153 is again incident on the phase extending film 154 to change its polarization state, so that a resonant cavity is formed between the surface of the substrate 2 to be etched and the coated lens 153, thereby making the polarization After the light beam is reflected and transmitted back and forth between the coated lens 153 and the surface of the substrate 2 to be etched And a plurality of interference fringes; and (c), signal processing: after receiving the interference signal through the photo sensor] 55, performing signal processing through the signal processing group 13 to obtain the optical amplitude (A) of the reflected light and the photoelectric Field (E), and then calculate the light intensity (丨) of the reflected light, and then the light intensity of the reflected light can be used to derive the spacing (d) of the resonant cavity, wherein the optical amplitude equation, the optical electric field equation and the light intensity equation The lines are as follows: An = A0TR, n/2R(1/2)(n-1).............................. (1) where A〇 is the incident light amplitude, R is the reflectance of the coated lens 彳53, D is the transmittance of the coated lens 153 (ideal state fy-R), R is the substrate to be etched 20 Reflectivity. E = Axcos(wt+ kr) = A0xTxei(wt+kr)xR,(1/2)xei. 5/1R,xRx
e1·20'................................. X ...................................(2) 其中ω為光的角速度，t為時間，k = 2TT/A，λ為波長， r為光所經過的路徑長度，δ為相位角差=k · 2d=4iTdM ’ d 為鑛膜鏡片1 53與該待蝕刻基材20表面的間距。 | = ExE* = A〇xT2XR’mR2 + R，2-2XFTXRXcos(8TTd/A)(3) 其中E為E的共輥複數。 藉由上述的光強度公式即可如圖5所示推算該鍍膜鏡 片1 5 3與該待姓刻基材2 0表面的間距（d )，即可準確且直 接地得到該蝕刻液30於該待蝕刻基材2〇表面的蝕刻深度。 201248752 藉由上述的技術手段，本發明㈣刻深度量測方法及 其裝置’主要係透過於該量測頭12内設置一共光程干涉儀 1 5的方式，不僅具有較佳的抗環境擾動能力，且可直接且 即時地里測待㈣基材2Q的㈣深度，藉以提升钱刻製程 勺正雀率’進而提供-可抗環境干擾、高解析度且直接量 測之蝕刻深度量測方法及其裝置者。 以上所述’僅是本發明的較佳實施例，並非對本發明 作任何形式上的限制，任何所屬技術領域中具有通常知識 者’若在不脫離本發明所提技術方案的範圍内，利用本發 明所揭示技術内容所作出局部更動或修飾的等效實施例， 並且未脫離本發明的技術方案内容，均仍屬於本發明技術 方案的範圍内。 【圖式簡單說明】 圖1係本發明蝕刻深度量測方法之操作流程方塊圖。 圖2係本發明蝕刻深度量測裝置之結構配置示意圖。 圖3係本發明蝕刻深度量測方法之量測操作示意圖。 圖4係本發明蝕刻深度量測方法之訊號處理示意圖。 圖5係本發明光強度及共振腔間距之關係圖。 【主要元件符號說明】 10量測裝置 12量測頭 14保護殼 1 5共光程干涉儀 1 5 2偏振分光鏡 11光纖 1 3訊號處理组 141穿透鏡 1 51光纖準直鏡 153鍍膜鏡片 201248752 1 54相位延遲片 1 55光感測器 2 ◦待蝕刻基材 3 0蝕刻液E1·20'................................. X ............ .......................(2) where ω is the angular velocity of light, t is time, k = 2TT/A, λ is the wavelength, r is the light The path length passed, δ is the phase angle difference = k · 2d = 4iTdM ' d is the distance between the film lens 153 and the surface of the substrate 20 to be etched. | = ExE* = A〇xT2XR'mR2 + R, 2-2XFTXRXcos(8TTd/A)(3) where E is the common roll of E. By using the light intensity formula described above, the distance (d) between the coated lens 1 5 3 and the surface of the substrate 20 to be imprinted can be estimated as shown in FIG. 5, and the etching solution 30 can be accurately and directly obtained. The etching depth of the surface of the substrate 2 to be etched. 201248752 By the above technical means, the method for inspecting the depth of the invention (4) and the device thereof are mainly provided by means of providing a total optical path interferometer 15 in the measuring head 12, which not only has better anti-environmental disturbance capability. And can directly and immediately measure (4) the depth of (4) of the substrate 2Q, thereby improving the etching depth of the substrate and the etch depth measuring method capable of resisting environmental interference, high resolution and direct measurement Device. The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any one of ordinary skill in the art can use the present invention without departing from the scope of the present invention. The equivalent embodiments of the present invention are not limited to the details of the technical solutions of the present invention, and are still within the scope of the technical solutions of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a block diagram showing the operation flow of the etching depth measuring method of the present invention. 2 is a schematic structural view showing the etching depth measuring device of the present invention. FIG. 3 is a schematic diagram of the measurement operation of the etch depth measurement method of the present invention. FIG. 4 is a schematic diagram of signal processing of the etching depth measuring method of the present invention. Figure 5 is a graph showing the relationship between the light intensity and the cavity spacing of the present invention. [Main component symbol description] 10 measuring device 12 measuring head 14 protective case 1 5 total optical path interferometer 1 5 2 polarizing beam splitter 11 fiber 1 3 signal processing group 141 wearing lens 1 51 fiber collimating mirror 153 coated lens 201248752 1 54 phase retarder 1 55 light sensor 2 ◦ etched substrate 3 0 etchant