TW201247061A - Heating/cooling test method and heating/cooling test apparatus - Google Patents

Heating/cooling test method and heating/cooling test apparatus Download PDF

Info

Publication number
TW201247061A
TW201247061A TW101100185A TW101100185A TW201247061A TW 201247061 A TW201247061 A TW 201247061A TW 101100185 A TW101100185 A TW 101100185A TW 101100185 A TW101100185 A TW 101100185A TW 201247061 A TW201247061 A TW 201247061A
Authority
TW
Taiwan
Prior art keywords
heating
cooling
electronic component
laser
temperature
Prior art date
Application number
TW101100185A
Other languages
Chinese (zh)
Other versions
TWI542267B (en
Inventor
Koji Funami
Yukiyosi Ono
Keinosuke Kanashima
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Publication of TW201247061A publication Critical patent/TW201247061A/en
Application granted granted Critical
Publication of TWI542267B publication Critical patent/TWI542267B/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2801Testing of printed circuits, backplanes, motherboards, hybrid circuits or carriers for multichip packages [MCP]
    • G01R31/281Specific types of tests or tests for a specific type of fault, e.g. thermal mapping, shorts testing
    • G01R31/2817Environmental-, stress-, or burn-in tests
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2801Testing of printed circuits, backplanes, motherboards, hybrid circuits or carriers for multichip packages [MCP]
    • G01R31/2806Apparatus therefor, e.g. test stations, drivers, analysers, conveyors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

The present invention provides a heating/cooling test method and a heating/cooling test apparatus, which can easily raise the temperature and does not need a Peltier element in the heating process. The solution of the present invention provides a heating/cooling test method for evaluating a circuit board packaged with electronic components, which includes: a heating step for heating the electronic components; a cooling step for cooling the electronic components; and a repeating step for alternately and repeatedly proceeding the heating step and the cooling step. For the heating step, the method irradiates the laser beam onto the laser absorber placed on top of the electronic components for heating, so as to raise the temperature of the electronic components.

Description

201247061 六、發明說明: t -ϋ. -f^r 】 發明領域 本發明係有關於一種將電子零件安裝於電路基板後之 連接信賴性試驗,特別是有關於—種焊料連接部之連接信 賴性试驗之加熱冷卻试驗方法及加熱冷卻試驗裝置。 C先前技術2 發明背景 習知之加熱冷卻試驗方法係使用了方法如下:將電子 零件安裝於電路基板之試驗試料放入大型恆溫爐,並且指 定低溫及高溫各自之保持時間作為試驗條件,且在反覆給 予溫度循環之負荷後,在預定之德環結束時取出試驗試 料,調查因溫度循環之導通電阻或焊料接合強度或焊料連 接部之金屬組織之變化,推定連接信賴性之壽命。測定導 通電阻時,也有採用不從恆溫爐取出試驗試料而是連續測 定之方法。 通常’溫度循環條件係設想電子機器之使用環境,並 且考慮加速係數而設定。一般而言,大部分低溫側之溫度 為-40°C、高溫側之溫度為125X:、電子機器往各自之設定 溫度昇溫之昇溫時間加上在設定溫度之保持時間的時間多 為3 0分鐘’试驗期間多係實施1 〇〇〇循環以上。 可是,上述之習知之信賴性試驗中,低溫側與高溫側 中,往設定溫度昇溫之昇溫時間與在設定溫度之保持時間 相加的時間,多半分別設定為30分鐘,進而試驗期間多係 3 201247061 實施1000循環以上,因此在得到試驗結果之前需要約3個月 以上之長期間,而有縮短製品開發變困難的問題點。 又,習知之信賴性試驗中,由於是在該環境下放置已 安裝電子零件之電路基板,因此會成為電路基板全體之溫 度變化,但是實際使用狀態中,在電子零件單體之發熱造 成的影響較大,會成為局部的溫度變化,故有成為以與實 際使用環境不一致之條件之試驗的問題。 為了解決該等習知之加熱冷卻試驗方法中之問題點, 有將帕耳帖元件直接貼附於電路基板,藉由流向帕耳帖元 件之電流之控制,反覆對基板於局部增加低溫及高溫之溫 度負荷,一面局部地施加溫度循環負荷,一面測定試驗試 料之導通電阻之變化(例如,参照專利文獻1)。 第13圖係顯示用以說明專利文獻1所記載之習知之加 熱冷卻試驗方法的概略圖。 於安裝於電路基板107之電子零件108的上面貼附帕耳 帖元件101與熱電偶102。 從溫度時間控制裝置106對電流控制裝置103輸出對應 於設定値之信號,由電流控制裝置103流通所設定之電流到 帕耳帖元件101。同時,利用溫度測定裝置104測定熱電偶 102產生之熱電動勢之電位差,測定對應於該電位差之溫 度,輸入到溫度時間控制裝置106。 在溫度時間控制裝置106比較及監視所測定之溫度與 所設定之溫度。溫度到達設定値後,在該溫度中所設定之 保持時間期間,控制電流使溫度為一定,當經過所設定之 201247061 保持時間時,由溫度時間控制裝置l〇6輪出信號,電流控制 裝置103改變流向帕耳帖元件101之電流方向,且使溫度改 變,直到已成為其中一者之設定溫度,並且進行控制直到 經過該溫度令所設定之保持時間。 然後,又改變電流之流向。藉由該一連_之動作的反 覆’對試驗試料反覆進行溫度循環試驗。 再者,導通電阻測定裝置丨〇 5係以端子連接於欲測定電 路基板1G7或電子零件之導通電阻値之處,敎導通電 阻値之變化。 【先行技術文献】 【專利文獻】 【專利文獻1】曰本專利公開公報特開2〇〇2_134668號 公報 ; 明内容】 發明概要 發明欲解決之課題 ^ ' 上述之習知之加熱冷卻試驗方法之構成中,對 於女裝於料基板上之魏較小電子零件要選擇性地給予 溫度循環是困難的。 。 即’由於❹耳帖元件面接觸而給予溫 此對於電路美知卜夕古危τ 因 _电路基板上之局度不同的電子零件,無法藉由^個帕 耳帖元件1 〇 1同時給予溫度循環。 接觸Γ由於帕耳帖元件1G1之面積較大,因此無法對已面 接觸之複妹小電子科_性地科溫度循環。 201247061 又,要使用習知之加熱冷卻試驗方法對各種形狀之複 數個電子零件同時給予溫度循環,需要該個數之帕耳帖元 件101與電流控制裝置103,而為不實際的試驗方法。 本發明係考慮上述習知之課題,目的在於提供一種在 昇溫步驟中,不使用帕耳帖元件而可簡易昇溫之加熱冷卻 試驗方法及加熱冷卻試驗裝置。 解決課題之手段 為解決上述課題,第1本發明為一種加熱冷卻試驗方 法,為了評價安裝有電子零件之電路基板,具有下述步驟: 昇溫步驟,係使前述電子零件昇溫者;冷卻步驟,係用以 冷卻前述電子零件者;及反覆步驟,係交互地反覆前述昇 溫步驟及前述冷卻步驟者,其中在前述昇溫步驟中,將雷 射光束照射於載置於前述電子零件上之雷射吸收體而加 熱,藉此使前述電子零件昇溫。 第2本發明為第1本發明之加熱冷卻試驗方法,其中前 述電子零件係安裝複數個於前述電路基板,且前述冷卻步 驟中,藉由冷卻裝置由前述電路基板之未安裝有前述電子 零件之側的面冷卻前述電子零件。 第3本發明為第1本發明之加熱冷卻試驗方法,其中其 中前述雷射吸收體之下面比前述電子零件之上面外形大。 第4本發明為第1〜3本發明之加熱冷卻試驗方法,其中 前述雷射吸收體之下面係透過熱傳導糊而接觸前述電子零 件之上面,且前述雷射吸收體係平行於前述下面之面方向 的熱傳導率比垂直於前述下面之面方向的熱傳導率大之異 201247061 方性熱傳導體。 第5本發明為第1本發明之加熱冷卻試驗方法,其中前 述昇溫步驟中係根據前述電子零件之表面溫度之測定値, 至少控制前述電子零件之最高溫度及前述最高溫度之保持 時間,並在前述冷卻步驟中,根據前述測定値,至少控制 前述電子零件之最低溫度及前述最低溫度之保持時間。 第6本發明為第1本發明之加熱冷卻試驗方法,其中前 述昇溫步驟中,將前述雷射光束照射於前述雷射吸收體 時,於前述雷射吸收體之上面之位於前述電子零件之發熱 源正上方的部分照射前述雷射光束。 第7本發明為第2本發明之加熱冷卻試驗方法,其中前 述昇溫步驟中,係對安裝於前述電路基板上之複數前述電 子零件,以電鏡控制前述雷射光束之照射位置,且照射在 載置於任意之前述電子零件上之前述雷射吸收體。 第8本發明為第7本發明之加熱冷卻試驗方法,其中前 述昇溫步驟中,係藉由前述電鏡而使前述雷射光束以平面 方式掃描前述雷射吸收體之上面全體,將前述雷射光束照 射於前述雷射吸收體。 第9本發明為第1本發明之加熱冷卻試驗方法,其中前 述冷卻裝置為固體冷卻體,在前述冷卻步驟中,係使設置 於前述固體冷卻體之局部冷卻板接觸前述電路基板之未安 裝有前述電子零件之側之前述面之對應於前述電子零件之 各個位置而進行冷卻。 第10本發明為第1本發明之加熱冷卻試驗方法,其中前 201247061 述電路基板及前述冷卻裝置設置於業經密閉之槽中,並且 前述槽之至少一部份係由對前述雷射光束具有透過性之材 料所構成,前述昇溫步驟中,由前述槽之外部,透過由前 述具有透過性之材料所構成之部分,而將前述雷射光束照 射於載置於前述電子零件上之前述雷射吸收體。 第11發明為第10本發明之加熱冷卻試驗方法,其中可 將前述槽内之環境變更為低濕度環境、真空環境、及不活 性環境之任一者。 第12本發明係一種加熱冷卻試驗裝置,一種加熱冷卻 試驗裝置,係可評價安裝有電子零件之電路基板者,包含 有:雷射振盪器,係使雷射光束振盪者;光束整形光學系 統,係將前述雷射光束整形者;冷卻裝置,係冷卻前述電 子零件者;溫度測定器,係測定前述電子零件溫度者;雷 射吸收體,係載置於前述電子零件上面者;控制裝置,係 反覆進行將前述雷射光束照射於載置於前述電子零件上面 之前述雷射吸收體之上面,使前述電子零件昇溫之昇溫步 驟、及使前述電子零件冷卻之冷卻步驟者。 第13本發明為第12本發明之加熱冷卻試驗裝置,其中 前述控制裝置係控制由前述雷射振盪器振盪之前述雷射光 束之雷射輸出及照射時間,又,控制由前述光束整形光學 系統所整形之前述雷射光束的形狀。 第14本發明為第12或13本發明之加熱冷卻試驗裝置, 其中前述電子零件安裝於前述電路基板複數個,且具有電 λ 鏡,可對安裝於前述電路基板上之複數前述電子零件控制 201247061 前述雷射光束之照射位置,將前述雷射光束照射於載置於 任意之前述電子零件之前述雷射吸收體。 發明效果 藉由本發明,可提供一種在昇溫步驟中不使用帕耳帖 元件而可簡易地昇溫之加熱冷卻試驗方法及加熱冷卻試驗 裝置。 圖式簡單說明 第1圖係本發明之實施形態1中加熱冷卻試驗裝置之構 成圖。 第2圖係本發明之實施形態1中加熱冷卻試驗裝置之加 熱時之構成圖。 第3圖係顯示未使用雷射吸收體時之加熱時之溫度變 化圖。 第4圖係顯示未使用雷射吸收體時之加熱時之溫度變 化圖。 第5圖係顯示本發明之實施形態1中加熱時之溫度變化 圖。 第6圖係顯示本發明之實施形態1中加熱時之溫度變化 圖。 第7圖係本發明之實施形態1中加熱冷卻試驗裝置冷卻 時之構成圖。 第8圖係顯示本發明之實施形態1中加熱冷卻時之溫度 變化圖。 第9圖係本發明之實施形態2中加熱冷卻試驗裝置之要 201247061201247061 VI. INSTRUCTION DESCRIPTION: t -ϋ. -f^r 】 FIELD OF THE INVENTION The present invention relates to a connection reliability test after mounting an electronic component on a circuit board, and more particularly to connection reliability of a solder joint Test heating and cooling test method and heating and cooling test device. C. Prior Art 2 Background of the Invention The conventional heating and cooling test method uses the following method: a test sample in which an electronic component is mounted on a circuit board is placed in a large-sized constant temperature furnace, and respective holding times of low temperature and high temperature are specified as test conditions, and are repeated After the temperature cycle load was applied, the test sample was taken out at the end of the predetermined ring, and the change in the on-resistance of the temperature cycle or the solder joint strength or the metal structure of the solder joint was investigated to estimate the life of the connection reliability. When the on-resistance is measured, a method in which the test sample is not taken out from the constant temperature furnace but continuously measured is used. Usually, the 'temperature cycle condition' is assumed to be the environment in which the electronic device is used, and is set in consideration of the acceleration coefficient. In general, most of the temperature on the low temperature side is -40 ° C, and the temperature on the high temperature side is 125 X: the temperature rise time at which the electronic device heats up to the respective set temperature plus the holding time at the set temperature is usually 30 minutes. During the test period, more than 1 cycle was implemented. However, in the above-described conventional reliability test, in the low temperature side and the high temperature side, the time during which the temperature rise time to the set temperature is increased and the hold time of the set temperature are set to 30 minutes, respectively, and the test period is more than 3 201247061 After 1000 cycles or more, it takes about 3 months or more before the test results are obtained, and there is a problem that shortens the development of the product. Further, in the conventional reliability test, since the circuit board on which the electronic component is mounted is placed in this environment, the temperature of the entire circuit board changes, but in the actual use state, the influence of the heat generation of the electronic component unit is caused. If it is large, it will become a local temperature change, so there is a problem that it is a test that is inconsistent with the actual use environment. In order to solve the problems in the conventional heating and cooling test methods, the Peltier element is directly attached to the circuit substrate, and the current flowing to the Peltier element is controlled to repeatedly increase the low temperature and the high temperature of the substrate. The temperature load is applied, and the change in the on-resistance of the test sample is measured while applying a temperature cycle load locally (for example, refer to Patent Document 1). Fig. 13 is a schematic view showing a conventional heating and cooling test method described in Patent Document 1. The Peltier element 101 and the thermocouple 102 are attached to the upper surface of the electronic component 108 mounted on the circuit board 107. The temperature control unit 106 outputs a signal corresponding to the set 对 to the current control unit 103, and the current control unit 103 circulates the set current to the Peltier element 101. At the same time, the potential difference of the thermoelectromotive force generated by the thermocouple 102 is measured by the temperature measuring device 104, and the temperature corresponding to the potential difference is measured and input to the temperature time control means 106. The temperature time control device 106 compares and monitors the measured temperature to the set temperature. After the temperature reaches the setting threshold, the control current makes the temperature constant during the holding time set in the temperature. When the set 201247061 holding time elapses, the signal is rotated by the temperature time control device 106, and the current control device 103 The direction of current flow to the Peltier element 101 is changed and the temperature is changed until it has become one of the set temperatures, and control is performed until the hold time set by the temperature command is passed. Then, change the flow of current again. The test sample was repeatedly subjected to a temperature cycle test by the reverse of the action of the operation. Further, the on-resistance measuring device 丨〇 5 is connected to the on-resistance 値 of the circuit board 1G7 or the electronic component to be measured, and the conduction resistance is changed. [PRIOR ART DOCUMENT] [Patent Document 1] [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 2 No. Hei. No. 2-134668. It is difficult to selectively give temperature cycling to Wei's smaller electronic parts on the women's material substrate. . That is, because the surface of the ❹ ❹ 元件 而 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 因 因 因 因 因cycle. Since the contact Γ has a large area of the Peltier element 1G1, it is impossible to circulate the temperature of the faculty. 201247061 In addition, it is necessary to use a conventional heating and cooling test method to simultaneously apply temperature cycles to a plurality of electronic components of various shapes, and the number of the Peltier elements 101 and the current control device 103 are required, which is an unrealistic test method. The present invention has been made in view of the above-described problems, and an object of the invention is to provide a heating and cooling test method and a heating and cooling test apparatus which can be easily heated without using a Peltier element in a temperature increasing step. Means for Solving the Problems In order to solve the above problems, the first invention is a heating and cooling test method. In order to evaluate a circuit board on which an electronic component is mounted, the following steps are performed: a temperature rising step of heating the electronic component; and a cooling step And the step of reversing the heating step and the cooling step, wherein the laser beam is irradiated onto the laser absorber disposed on the electronic component in the heating step Heating, thereby heating the aforementioned electronic components. According to a second aspect of the present invention, in the heating and cooling test method of the first aspect of the invention, the electronic component is mounted on the plurality of circuit boards, and in the cooling step, the electronic component is not mounted on the circuit board by a cooling device. The side faces cool the aforementioned electronic components. According to a third aspect of the invention, in the heating and cooling test method of the first aspect of the invention, the lower surface of the laser absorber is larger than the upper surface of the electronic component. According to a fourth aspect of the present invention, in the heating and cooling test method of the first to third aspects, the underside of the laser absorber is in contact with the upper surface of the electronic component through a heat conductive paste, and the laser absorption system is parallel to the lower surface direction. The thermal conductivity is greater than the thermal conductivity of the direction perpendicular to the lower surface of the aforementioned 201247061 square heat conductor. According to a fifth aspect of the present invention, in the heating and cooling test method of the first aspect of the present invention, in the heating step, at least a maximum temperature of the electronic component and a retention time of the highest temperature are controlled based on a measurement of a surface temperature of the electronic component. In the cooling step, at least the minimum temperature of the electronic component and the retention time of the minimum temperature are controlled according to the measurement enthalpy. According to a sixth aspect of the present invention, in the heating and cooling test method of the first aspect of the present invention, in the heating step, when the laser beam is irradiated onto the laser absorber, heat is generated in the electronic component on the upper surface of the laser absorber. The portion directly above the source illuminates the aforementioned laser beam. According to a seventh aspect of the present invention, in the heating and cooling test method of the second aspect of the present invention, in the plurality of electronic components mounted on the circuit board, the irradiation position of the laser beam is controlled by an electron microscope, and the irradiation is carried out. The aforementioned laser absorber placed on any of the aforementioned electronic components. According to a seventh aspect of the present invention, in the heating and cooling test method of the seventh aspect of the present invention, the laser beam is configured to scan the entire surface of the laser absorber in a planar manner by the electron microscope, and the laser beam is irradiated Irradiation to the aforementioned laser absorber. According to a ninth aspect of the present invention, in the heating and cooling test method of the first aspect of the present invention, the cooling device is a solid cooling body, and in the cooling step, the local cooling plate provided on the solid cooling body is in contact with the circuit board. The surface of the side of the electronic component is cooled corresponding to each position of the electronic component. According to a tenth aspect of the present invention, in the heating and cooling test method of the first aspect of the present invention, the circuit board and the cooling device of the above-mentioned 201247061 are disposed in a sealed groove, and at least a portion of the groove is transmitted through the laser beam. And the material is formed by irradiating the laser beam on the electronic component mounted on the electronic component by transmitting a portion of the transparent material from a portion of the outer surface of the groove through the transparent material. body. According to a tenth aspect of the invention, in the heating and cooling test method of the tenth aspect of the invention, the environment in the tank can be changed to any of a low humidity environment, a vacuum environment, and an inactive environment. The twelfth invention is a heating and cooling test device, a heating and cooling test device, which is capable of evaluating a circuit board on which an electronic component is mounted, and includes: a laser oscillator that oscillates a laser beam; and a beam shaping optical system; The laser beam shaping device; the cooling device is for cooling the electronic component; the temperature measuring device is for measuring the temperature of the electronic component; and the laser absorber is placed on the electronic component; the control device is The step of irradiating the laser beam onto the upper surface of the laser absorber placed on the electronic component, the step of raising the temperature of the electronic component, and the step of cooling the electronic component are performed. According to a thirteenth aspect of the present invention, in the heating and cooling test apparatus of the twelfth aspect, the control device controls a laser output and an irradiation time of the laser beam oscillated by the laser oscillator, and is controlled by the beam shaping optical system. The shape of the aforementioned laser beam that is shaped. According to a thirteenth aspect of the present invention, in the heating and cooling test apparatus of the twelfth or thirteenth aspect, the electronic component is mounted on the plurality of circuit boards, and has an electric λ mirror for controlling the plurality of electronic components mounted on the circuit board 201247061 At the irradiation position of the laser beam, the laser beam is irradiated onto the laser absorber placed on any of the electronic components. Advantageous Effects of Invention According to the present invention, it is possible to provide a heating and cooling test method and a heating and cooling test apparatus which can be easily heated without using a Peltier element in a temperature increasing step. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing the configuration of a heating and cooling test apparatus according to a first embodiment of the present invention. Fig. 2 is a view showing the configuration of a heating and cooling test apparatus according to Embodiment 1 of the present invention. Fig. 3 is a graph showing the temperature change at the time of heating when the laser absorber is not used. Fig. 4 is a graph showing changes in temperature at the time of heating when the laser absorber is not used. Fig. 5 is a graph showing changes in temperature during heating in the first embodiment of the present invention. Fig. 6 is a graph showing the temperature change during heating in the first embodiment of the present invention. Fig. 7 is a view showing the configuration of the heating and cooling test apparatus in the first embodiment of the present invention when it is cooled. Fig. 8 is a graph showing temperature changes during heating and cooling in the first embodiment of the present invention. Figure 9 is a diagram of the heating and cooling test apparatus in the second embodiment of the present invention 201247061

部截面構成圖D 第10圖係本發明之實施形態3中加熱冷卻試驗裝置加 熱時之構成圖。 第11圖係本發明之實施形態4中加熱冷卻試驗裝置之 構成圖。 第12圖係本發明之實施形態5中加熱冷卻試驗裝置之 構成圖。 第13圖係用以說明習知之加熱冷卻試驗方法之概略 t實施令式】 較佳實施例之詳細說明 以下根槺第1圖〜第12圖說明本發明之實施形態。 (實施形態1) " 第1圖係顯示使用於本發明之實施形態i中之加熱冷卻 忒驗方法之實施之加熱冷卻試驗裝置之構成圖。 本實施形態1之加熱冷卻試驗裝置2〇之概要係在安裝 有複數電子零件6a〜6e之電路基板5中,於電子零件6_之 上表面載置雷射吸收體7a、7b、7e、7eMwf_f^ 發出之雷射光束3在光束整形光學系統2整形,照射於雷射 吸收體7a、7b、7c、7e’使之加熱’並藉由來自雷射吸收 體7a、7b、7e、7e之熱傳導錢電子零件昇溫,然後 铮止雷射光束3之照射,並且使電路基板5由安裝有電子零 件6a〜6e之相反側接觸固體冷卻體(帕耳帖元件9),反覆進行 將電子零件6a~6e冷卻之溫度循環。 10 201247061 第1圖雷中,試驗試料係表面安裝有電子零件6a、6b、6c、 6d、6e之電路基板5,且㈣電路基板增 驗裝置2〇則如以下構成。 ‘、、、冷部,式 在電子零件6a、6b、6c、6d、6^ ^ 子零件上面之外形還大 ,比該等電 大之尺寸之f射吸收體7a、7b、7c、 7e載置成透賴鱗一包含料電切件之 相同電子零件6e、6轉㈣,載· ^ 雷射吸收體㈣了、福可集細1件表面之 本實施形態1之加熱冷卻試驗裝 子—6 一射振 射光束3之光束整形先學系統2。 及用W整形雷 電子射光束33,、3,射載置於 7e 6d ' 6e上之雷射吸收體7a、7b、7c、 又t光束3偏向之電鏡4設置於雷射光束3之光轴上。 元件9, ^路基板化下方設置作為固體冷卻體之帕耳帖 牛以冷部電子零件6a、6b、6c、6d、6e。^ 該帕耳帖轉9裝对料_,昇_ 板 :方向―使之接觸電路基板::: 突起,糾絲5上也《料接器等之 Φ白耳帖疋件9適用於本發明之冷卻裝置之一例。 置圖說明本實施形態1之加熱冷卻試驗裝 置20中加熱時之試驗方法。 201247061 第2圖係顯示本實施形態1之加熱冷卻試驗裝置2 〇之加 .…夺之構成_。第2圖中,關於電子零件僅顯示】個電子零 件6b以容易理解說明。 電子零件6b透過焊料連接部訃而安裝於電路基板5 上,且於該電子零件外之上表面,隔著熱傳導糊(未圖示) 載置有比電子零件6b之上面之外形尺寸大之雷射吸收體 7b 〇 具體而言,電子零件6b之上面為邊長為30mm之平方面 積之BGA(球狀栅格陣列bau grid array)之半導體安裝體, 焊料連接部8b係'由數十個構成之焊料球形成,雷射吸收體 7b之尺寸為邊長為35mm之平方面積、厚度。 進一步,電子零件6b裝設有用以測定該表面溫度之溫 度測定Is 12a,焊料連接部8b裝設有用以測定該表面溫度之 溫度測定Sl2b。溫度測定以2a、12b有接觸式之熱電偶、 或利用熱放射光之非接觸式溫度測定器。 位於電路基板5下方之帕耳帖元件9在電子零件讣加熱 時並未與電路基板5接觸。 又,本實施形態1之加熱冷卻試驗裝置20之控制裝置13 具有電子零件6b與焊料連接部此之溫度測定機能、雷射振 盪器1之輸出控制機能、光束整形光學系統2之光束形狀控 制機能、帕耳帖元件9之溫度控制機能、帕耳帖元件9之昇 降機11之昇降控制機能、及溫度循環控制機能。 首先,由雷射振盪器1振盪之雷射光束3在光束整形光 學系統2被整型為預定之雷射光束形狀。* 12 201247061 其次,業經整形之雷射光束3在電鏡4偏向,雷射光束 3b照射於雷射吸收體7b並且被加熱。藉由來自業經加熱 雷射吸收體7b之熱傳導,電子零件6b之溫度上昇。而且 上昇時之溫度以溫度測定器12a測定。又,熱由業經加熱 電子零件6b經由焊料連接部8b傳往電路基板5,且該焊料連 接部8b之溫度以溫度測定器12b測定。 控制裝置13對照溫度測定器12 a所測定之電子零件6 b 之溫度、與預先設定於控制裝置13之溫度線圖之加熱曲 線,然後在加熱時,給予雷射振盪器丨輸出之指示,使在溫 度測定器12a之檢測溫度接近由該溫度線圖所讀出之各個 時期之目標溫度,並在到達預定之最高溫度後,發出指示, 使該最尚溫度僅保持該溫度線圖中所設定之保持時間。 如此’控制裝置13配合溫度線圖之加熱曲線而加熱控 制,並且使最高溫度保持設定為溫度線圖之時間的控制適 用於本發明之昇溫步驟之一例。 本實施形態1之雷射吸收體7b為吸收雷射光束讣之熱 能之材料’且以不被雷射光束儿之熱能損傷之材料,例如 由鐵、鋼、鋁等之金屬材料構成。 電子零件6b一般係由樹脂模具成塑,當於電子零件6b 之樹脂模具Μ接照射f射光束⑨時,在電子零件处之樹 脂模具表面部分吸”射光束3b之麟,且僅該樹脂模具 表面部分急速溫度上昇’當表面溫度到達例如16Gt以上時 則會燒焦。 $ 3 ®及第4圖係顯示不使用雷射吸收體几而直接將雷 13 201247061 射光束3b照射於電子零件6b之樹脂模具表面進行加熱時之 電子零件6b及焊料連接部8b之溫度變化圖。第3圖係顯示雷 射輸出20W時之各溫度變化,第4圖係顯示雷射輸出18W時 之各溫度變化。第3圖及第4圖中,T1表示電子零件6b之溫 度變化曲線,T2表示焊料連接部8b之溫度變化曲線。 例如,當以雷射輸出20W雷射光束3b直接照射電子零 件6b之樹脂模具表面使之加熱時,會產生如第3圖所示之溫 度變化。也就是說’在雷射照射後5分鐘後,電子零件6b之 溫度T1達到160°C ’電子零件6b之樹脂模具部會燒焦。再 者,此時之焊料連接部8b之溫度T2為80。(:,尚未達到必要 溫度105°C。 相反的,當雷射光束3b之輸出下降到18W而使樹脂模 具表面部分不燒焦時,則如第4圖所示,電子零件6b之溫度 T1為150 C以下’但即使焊料連接部8b之溫度T2飽和後經過 15分鐘後也只會上升到70°C ’未到達必要溫度1〇5乞^該飽 和狀態係往電子零件6b投入之投入能源與來自電子零件6b 及電路基板5之放熱能為均衡狀態,因此焊料連接部此之溫 度不會再上升。 在此,本貫施形態1中,為了將電子零件6b之溫度提高 到必要溫度,將雷射吸收體7b載置於電子零件6b,藉此即 使it南雷射光束3b之輸出而將熱能投入電子零件6b,電子 零件6b也不會因為雷射光束3b之熱能而受損傷,可解決該 問題。 λ 第5圖係顯示使用雷射吸收體7 b之本實施形態丨之加熱 14 201247061 冷卻試驗裝置20中之加熱時之電子零件6b及焊料連接部8b 的溫度變化圖。 例如’使用雷射吸收體7b之更具體的事例係,對電子 零件6b以雷射輸出30W、雷射光束徑cp30mm將雷射光束照 射於雷射吸收體7b時,會產生如第5圖所示之溫度變化。雷 射照射5分鐘,電子零件6b之溫度T1會到達電子零件牝不會 焦黑的150°C ’焊料連接部8b之溫度T2到達105。(:,並在之 後的10分鐘期間維持該溫度。 再者,各圖中,表示雷射光束3、33、31)、爻、36之箭 頭係表示光軸通過的位置。此種情況下,於載置於電子零 件6b之30mm平方面積之上面之35mm平方面積之雷射吸收 體几之大略中央位置,照射雷射光束徑cp3〇mm之雷射光束 3b,因此涵括電子零件6b之上面全體進行加熱,並且不照 射雷射吸收體7b之外側之部分,僅電子零件仍選擇性地被 加熱。 另-方面,欲提高雷射輸出以在比此更短之時間内提 高焊料連接部敵溫度時,電子零件6b之溫度會在丨赃以 上’該樹脂模具部會焦黑。 再者,要在短時間内提高焊料連接部此之溫度,雷射 吸收體7以要使贿透過電子零件啊熱料糊接觸之接 觸面平行之㈣向的熱料料錢過f子科此與熱傳 導糊接觸之接觸面垂直之方向的熱傳導率大之異方性熱傳 導體、例如石墨材料等即可。 當於具有此種異方性熱傳導體特性之雷射吸收體滅 15 201247061 射雷射光束3b時’會迅速且均一的將熱傳到與電子零件6b 之接觸面平行之雷射吸收體7b之雷射照射側的表面内,另 一方面不會直接傳熱到厚度方向’因此可於該雷射吸收體 7b蓄積熱能。然後,該熱能傳到與雷射吸收體7b之電子零 件6b接觸之面側。進一步’透過雷射吸收體7b與電子零件 6b間之熱傳導糊,可有效率地傳到與電子零件6b之雷射吸 收體7b相接之面側’提高電子零件6b之焊料連接部8b的溫 度。 因此,即使更進一步提高雷射輸出,由於熱能可蓄積 於雷射吸收體几,因此電子零件6b之樹脂模具部不會焦 黑,並可使焊料連接部8b之溫度上昇。 第6圖係顯示使用異方性熱傳導體作為雷射吸收體7b 之本實施形態1之加熱冷卻試驗裝置20中之加熱時之電子 零件6b及焊料連接部8b之的溫度變化。 該具體事例係當對電子零件6b,以雷射輸出45 W、雷 射光束徑(p30mm照射於雷射吸收體7b時,會漸漸如第6圖所 示般之溫度變化。於雷射照射2分鐘後,電子零件6b之溫度 T1到達電子零件6b不會焦黑之150。(:,且焊料連接部8b之溫 度T2到達105 C ’然後在5.5分鐘内,維持該溫度。 其次,使用第7圖說明本實施形態丨之加熱冷卻試驗裝 置20中之冷卻時之試驗方法。 第7圖係顯示本實施形態1之加熱冷卻試驗裝置2 0之冷 卻時之構成圖。第7圖中,為了易於理解說明,關於電子零 件僅顯示1個電子零件6b。 16 201247061 控制裝置13在冷卻時,使由雷射振盪器工振盡之雷射光 束3—止(第7圖中,以虛線表示照射雷射光束3之方向),並 且控制帕耳帖元件9之昇降機11,使帕耳帖元件9上昇’接 T電路基板5之底面。與此同時,控制裝置13對照溫度測 M 12b所測定之焊料連接部⑽之溫度與於控制裝置η預 先設定之溫度線圖之冷卻曲線,在冷卻時,控制往帕耳帖 元件9之通電’使在溫度败器123之檢測溫度接近由該溫 度線圖讀取之各__目標溫度,並在到達狀之最低 溫度後’控制往帕耳帖元件9之通電,使該最低溫度僅保持 在該溫度線圖中所設定之保持時間。 如此控制裝置13配合溫度線圖之冷卻曲線而進行冷 卻控制’並錢最低溫度健持溫度線圖所設定之時間的 控制適用於本發明之冷卻步驟之一例。 第8圖係顯示本實施形態1之加熱冷卻試驗衰置20中加 熱冷卻時之電子零件6b及料連接_的溫度變化。 如第8圖所示,在冷卻時將帕耳帖元件9之溫度設定於 -45°C時’在雷射加熱7.5分鐘後,停止雷射照射,使帕耳帖 元件9接觸於電路基板5,且在經過2分鐘之95分鐘的位 置,電子零件6b之溫度T1到達峨。可知相較於加執或冷 卻需要之時間分別在習知之大型試驗槽中需要3〇分鐘左 右,約可縮短約1/4的時間。 接著,控制裝置13控制上述之昇溫步驟與冷卻步驟, 使之交互進行狀她’實麵L之加熱冷卻試驗。 反覆進行該m雜冷卻錢之處理適料本發明之反 17 201247061 覆步驟之一例。 再者,上述中已說明昇溫步驟後進行冷卻步驟,但亦 可在反覆步驟之最初進行昇溫步驟及冷卻步驟任一者,又 亦可在反覆步驟最後控制進行昇溫步驟及冷卻步驟任一 者。 本實施形態1中之上述說明係電子零件6b為1個之情況 的事例,但藉由移動電鏡4改變雷射光束3之照射方向,可 將雷射光束3a、3b、3c、3e個別照射於第1圖中之電路基板 5上之任意電子零件6a、6b、6c、6d、6e上的雷射吸收體7a、 7b、7c、7e。又,對任意之電子零件6a、6b、6c、6d、6e, 藉由控制裝置13選擇最適合之雷射條件,並且對雷射振盪 器1進行雷射輸出控制,可在光束整形光學系統2將雷射光 束3整形,藉此個別控制任意之電子零件6a、6b、6c、6d、 6e之溫度線圖。 習知之加熱冷卻試驗中,要進行複數個之電子零件 6a、6b、6c、6d、6e之加熱冷卻試驗,係例如首先一開始 對電子零件6a進行預定循環之加熱冷卻試驗,其次,同樣 地也對電子零件6b、6c、6d、6e進行預定循環之加熱冷卻 試驗,藉此完成全電子零件6a、6b、6c、6d、6e之加熱冷 卻試驗。 另一方面,本實施形態1之加熱冷卻試驗裝置20之情況 中,藉高速掃描電鏡4,以高速對複數個之電子零件6a、6b、 6c、6d、6e上的雷射吸收體7a、7b、7c、7e依序反覆照射雷 射光束3a、3b、3c、3e,可同時使複數個電子零件6a、6b、 18 201247061 6c、6d、6e昇溫。 例如,以1Hz之周期高速,掃描電鏡4以定位,且對複 數個電子零件6a、6b、6c、6d、6e上的雷射吸收體7a、7b、 7c、7e依序照射雷射光束3a、3b、允、3e不到丨秒。本實施 形怨1之構成中,作為雷射照射之對象之雷射吸收體&、 7b、7c、乃有4個,因此對各雷射吸收體乃、几、&、%每 隔4秒照射雷射光束3僅丨秒鐘,連續反覆此動作。 例如,對於使1個電子零件昇溫所需要的雷射輪出,藉 由使雷射輸出提高到4倍,即使每隔4秒照射雷射光束知: 3b、3c、3e僅1秒’各雷射吸收體乃、7b、7c、&可以與 續照射時幾乎相同之溫度線圖加熱。然後,藉帕耳帖^件 9 ’ 一口氣冷卻電子零件6a、6b、&、^、^。 因此,本實施形態!之構成中,由於可對5個電子零件 6a、6b、6c、6d、_時進行加熱冷卻試驗,因此相較於 個別使5個電子零件‘^^昇溫的情況’可以 1/5之時間進行加熱冷卻試驗。 因此右利用本貫施形態!之加熱冷卻試驗方法,於電 路基板5上搭__同的電子零件,且該等_電子零件 同時以相同雷射照射條件進行加熱並冷卻藉此可以1次的 試驗確認以相同加熱冷卻條件之N增加。 又即使搭載相同電子零件,亦可對各個電子零件以 不同之雷射照射條件同時加熱,因此可以i次的試驗進行以 不同之加熱條件之加熱冷卻試驗。 (實施形態2) 201247061 第9圖為本發明之實施形態2之加熱冷卻試驗裝置之要 部的截面構成圖。與第2圖相同之構成部分則使用相同標 號。 第9圖係顯示對電子零件6b上之雷射吸收體7b之雷射 光束3b的雷射照射位置。 實施形態1中,如第2圖所示,於電子零件6b上之雷射 吸收體7b之大略中央照射雷射光束3b,而產生光軸。 可是,有時候在某個由BGA之半導體安裝體構成之電 子零件6b中,於該内部,除了配置作為發熱源14之1C晶片 之外,會由中央部轉換而配置。對於該種電子零件6b中之 雷射吸收體7b,若於該發熱源14之正上方位置照射雷射光 束3b產生光軸來加熱電子零件6b,會再次出現更接近實際 使用狀態之發熱狀態,可進行信賴性更高之加熱冷卻試驗。 因此,本實施形態2之控制裝置13控制電鏡4,使雷射 光束3b照射於位於電子零件6b之發熱源14之正上方之雷射 吸收體7b。 (實施形態3) 第10圖係本發明之實施形態3之加熱冷卻試驗裝置21 之加熱時的構成圖。與第2圖相同之構成部分使用相同標 號。 本實施形態3之控制裝置13係如第10圖所示,進行控制 使雷射光束3b對電鏡4電子零件6b上之雷射吸收體7b全面 掃描。 i 實施形態1及2之構成中,由於雷射光束3b係固定照射 20 201247061 在電子I件6b上之雷射吸收體几之預定位置,因此對於照 射之雷射光束3b之雷射光束徑,電子零件6b之面積相對大 時’有時會無法會無法均一地加熱雷射吸收體7b之全面。 例如’當電子零件6b為30mm平方面積、雷射吸收體7b 為35mm平方面積時,若照射雷射光束徑為(plOmm之雷射光 束3b ’雖然電子零件讣上面之中央附近被加熱,但難以如 熱到上面之外側部分。 另一方面,本實施形態3之加熱冷卻試驗裝置21中,係 藉使用電鏡4 ’使雷射光束3b對電子零件6b上之雷射吸收體 7b全面掃描’即使係較大面積的電子零件汕也可概略岣— 的加熱。進一步’由於電鏡4之掃描領域可容易自由設定, 因此可對應於各種形狀或尺寸的電子零件及雷射吸收體。 再者’使雷射光束3b之照射位置掃描雷射吸收體7b全 面時’宜在雷射光束3b不跳出雷射吸收體7b之外側的範圍 内掃描。當雷射光束3b之照射範圍跳出雷射吸收體7b之外 側時’會加熱到值於雷射吸收體7b之外側之不需要加熱的 零件或基板面。 (實施形態4) 第11 ®係本發明之實施形態4之加熱冷卻試驗裝置2 2 的構成圖°與第1圖相同之構成部分使用相同標號。 第11圖係顯示對電子零件6a、6b、6c、6d、6e選擇性 地冷卻。 實施形態1中,如第1圖所示,帕耳帖元件9全面地接觸 於電路基板5之下㈣行冷卻。 21 201247061 可是,有時候在實際之電路基板5下面,會有其他電子 零件或連接器等的突起物l〇a、10b,該情況下,則無法使 帕耳帖元件9全面接觸電路基板5之下面。 因此,在本實施形態4之加熱冷卻試驗裝置22中,於帕 耳帖元件9之上面(與電路基板5接觸之面上)裝設局部冷卻 板15a、15b、15c,該等局部冷卻板係由例如銅鋁等構成, 且比欲冷卻之電子零件6a、6b、6c、6d之下面外形的尺寸 大且熱傳導性佳,如此,可避開電路基板5下面之突起物 10a、10b,並且選擇性地冷卻電子零件6a、6b、6c、6d。 第11圖所示之本實施形態4之構成中,由於係不欲使電 子零件6e冷卻,因此在該下部之帕耳帖元件9的位置未安裝 局部冷卻板。 即,本實施形態4中,可僅變更局部冷卻板之裝設位 置、及形狀等,對應於複數電子零件之各種配置。 (實施形態5) 第12圖係本發明之實施形態5之加熱冷卻試驗裝置2 3 之構成圖。與第1圖相同之構成部分使用相同標號。 本實施形態5之加熱冷卻試驗裝置23係如第12圖所 示,主要部分在可密閉之試驗槽16内,且雷射光束3a、3b、 3c、3e通過裝設於試驗槽16之外周之一部份的透窗17而照 設於雷射吸收體7a、7b、7c、7e。 又,試驗槽16係裝設有可使試驗槽16内部為真空並且 置換成其他氣體之置換裝置18。 再者,試驗槽16為本發明之密閉槽之一例,透窗17為 22 201247061 本發明之由對雷射光束具有透過性之材料所構成之部分的 一例0 實施形態1〜4之加熱冷卻試驗裝置中,由於係在大氣中 使用帕耳帖元件9冷卻電子零件6a、6b、6c ' 6d、6e,因此 當冷卻溫度下降到-45°C時,有時候帕耳帖元件9會結露而 電路基板5或電子零件6a、6b、6c、6d、6e之冷卻性能降低。 相對於此’本實施形態5之加熱冷卻試驗裝置藉置換裝 置18 ’可使試驗槽16内為低濕度環境並且為真空環境,且 為氬氣#惰性氣體環境,可防止結露,防止冷卻性能降低。 再者,各實施形態中,係使用帕耳帖元件9作為冷卻裝 置來說明,但亦可使用其他冷卻裝置。例如,亦可為使氣 體冷媒通過電路基板5之下面冷卻之構成。 如以上所說明,藉使用本發明之加熱冷卻試驗方法, 對於形狀不同之複數個電子零件,會產生與自己發熱相同 的熱傳導現象’不僅可給^如引起實際之破祕象之熱過 程的溫度循環’亦可在短時間内進行信賴性試驗。又可 士各種不同形狀之複數個電子零相時或個針溫度循 環。 再者,上述實施形態之加熱冷抑裝置中,任一者皆設 有帕耳帖元件9’但亦可不設置帕耳帖元件9。即,於電子 6b 6c、6e、6d、6e之加熱使用雷射,冷卻亦可 =知使用悝溫爐來進行。即使是如此之構成 ,相較於於 昇溫及冷卻双枝諫溫_.軌,由於可大闕短昇温 步驟中之時間,因此可提高效率。 23 201247061 又,上述實施形態中,安裝有複數個電子零件,但亦 可僅安裝1個電子零件。 又,上述實施形態中,雷射吸收體係透過熱傳導糊而 載置於電子零件,但亦可不透過熱傳導糊直接載置於電子 零件上。 産業上之可利用性 本發明之加熱冷卻試驗方法及加熱冷卻試驗裝置在昇 溫步驟中不使用帕耳帖元件而具有可簡易昇溫之效果,不 僅可適用於信賴性試驗,亦可適用於賦予溫度循環之熱處 理等之表面處理的用途。 I:圖式簡單說明3 第1圖係本發明之實施形態1中加熱冷卻試驗裝置之構 成圖。 第2圖係本發明之實施形態1中加熱冷卻試驗裝置之加 熱時之構成圖。 第3圖係顯示未使用雷射吸收體時之加熱時之溫度變 化圖。 第4圖係顯示未使用雷射吸收體時之加熱時之溫度變 化圖。 第5圖係顯示本發明之實施形態1中加熱時之溫度變化 圖。 第6圖係顯示本發明之實施形態1中加熱時之溫度變化 圖。 第7圖係本發明之實施形態1中加熱冷卻試驗裝置冷卻 24 201247061 時之構成圖。 第8圖係顯示本發明之實施形態1中加熱冷卻時之溫度 變化圖。 第9圖係本發明之實施形態2中加熱冷卻試驗裝置之要 部截面構成圖。 第10圖係本發明之實施形態3中加熱冷卻試驗裝置加 熱時之構成圖。 第11圖係本發明之實施形態4中加熱冷卻試驗裝置之 構成圖。 第12圖係本發明之實施形態5中加熱冷卻試驗裝置之 構成圖。 第13圖係用以說明習知之加熱冷卻試驗方法之概略 圖。 【主要元件符號說明】 1.. .雷射振盪器 10、10a、10b...突起物 2.. .光束整形光學系統 11...昇降機 3、3a、3b、3c、3e...雷射光束 12a、12b.··溫度測定器 4.. .電鏡 13…控制裝置 5.. .電路基板 14...發熱源 6a、6b、6c、6d、6e...電子零 15a、15b、15c.·.局部冷卻板 件 16...試驗槽 7a、7b、7c、7e...雷射吸收體 17...透窗 8a、8b...焊料連接部 18…置換裝置 9.. .帕耳帖元件 20、2卜22、23...加熱冷卻試 25 201247061 驗裝置 105 101...帕耳帖元件 106 102...熱電偶 107 103...電流控制裝置 108 104...溫度測定裝置 .導通電阻測定裝置 .溫度時間控制裝置 .電路基板 .電子零件 26Fig. 10 is a configuration diagram of the heating and cooling test apparatus in the third embodiment of the present invention when it is heated. Fig. 11 is a view showing the configuration of a heating and cooling test apparatus in the fourth embodiment of the present invention. Fig. 12 is a view showing the configuration of a heating and cooling test apparatus in the fifth embodiment of the present invention. Fig. 13 is a view for explaining a conventional heating and cooling test method. t. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to Figs. 1 to 12 . (Embodiment 1) " Fig. 1 is a configuration diagram showing a heating and cooling test apparatus used in the heating and cooling test method according to Embodiment i of the present invention. The outline of the heating and cooling test apparatus 2 of the first embodiment is that the laser absorbers 7a, 7b, 7e, and 7eMwf_f are placed on the upper surface of the electronic component 6_ in the circuit board 5 on which the plurality of electronic components 6a to 6e are mounted. ^ The emitted laser beam 3 is shaped in the beam shaping optical system 2, irradiated to the laser absorbers 7a, 7b, 7c, 7e' to heat it' and is thermally conducted by the laser absorbers 7a, 7b, 7e, 7e The electronic component of the money is heated, and then the irradiation of the laser beam 3 is stopped, and the circuit board 5 is brought into contact with the solid heat sink (Peltier element 9) from the opposite side to which the electronic components 6a to 6e are mounted, and the electronic component 6a is repeatedly turned on. 6e cooling temperature cycle. 10 201247061 In Fig. 1 , the test substrate is a circuit board 5 on which electronic components 6a, 6b, 6c, 6d, and 6e are mounted, and (4) the circuit board augmentation device 2 is configured as follows. ',, and cold parts, the form is larger on the upper surface of the electronic parts 6a, 6b, 6c, 6d, 6^^, and the radiation absorbers 7a, 7b, 7c, 7e of the size larger than the electric power are contained. The heating and cooling test device of the first embodiment of the present embodiment 1 is provided with the same electronic parts 6e, 6 turns (4), the laser absorber (4), and the surface of the surface of the surface. 6 Beam shaping of a single shot beam 3 is first learned in system 2. And using the W-shaped laser beam 33, 3, the laser absorber 7a, 7b, 7c on which the radiation is placed on the 7e 6d '6e, and the electron microscope 4 biased toward the beam 3 is disposed on the optical axis of the laser beam 3. on. The element 9 is provided with a cold-filled electronic component 6a, 6b, 6c, 6d, 6e as a solid cooling body. ^ The Peltier turns 9 loaded with material _, liter _ board: direction - makes it contact with the circuit board::: protrusion, entanglement 5 also "the Φ white ear 疋 9 of the connector or the like is suitable for the present invention An example of a cooling device. The test method for heating in the heating and cooling test apparatus 20 of the first embodiment will be described. 201247061 Fig. 2 is a view showing the configuration of the heating and cooling test apparatus 2 of the first embodiment. In Fig. 2, only one electronic component 6b is displayed for the electronic component for easy understanding. The electronic component 6b is mounted on the circuit board 5 through the solder connection portion, and a large-sized lightning is placed on the upper surface of the electronic component on the upper surface of the electronic component via a heat conductive paste (not shown) than the upper surface of the electronic component 6b. Specifically, the upper surface of the electronic component 6b is a semiconductor package of a BGA (ball grid array) having a square area of 30 mm, and the solder connection portion 8b is composed of tens of The solder balls are formed, and the size of the laser absorber 7b is a square area having a side length of 35 mm and a thickness. Further, the electronic component 6b is provided with a temperature measurement Is 12a for measuring the surface temperature, and the solder connecting portion 8b is provided with a temperature measurement S12b for measuring the surface temperature. The temperature is measured by a contact type thermocouple of 2a, 12b, or a non-contact type temperature measuring device using heat radiation. The Peltier element 9 located under the circuit board 5 is not in contact with the circuit board 5 when the electronic component is heated. Further, the control device 13 of the heating and cooling test apparatus 20 of the first embodiment has the temperature measuring function of the electronic component 6b and the solder connecting portion, the output control function of the laser oscillator 1, and the beam shape control function of the beam shaping optical system 2. The temperature control function of the Peltier element 9, the lifting control function of the elevator 11 of the Peltier element 9, and the temperature cycle control function. First, the laser beam 3 oscillated by the laser oscillator 1 is shaped in the beam shaping optical system 2 into a predetermined laser beam shape. * 12 201247061 Next, the shaped laser beam 3 is deflected in the electron microscope 4, and the laser beam 3b is irradiated to the laser absorber 7b and heated. The temperature of the electronic component 6b rises by the heat conduction from the heated laser absorber 7b. Further, the temperature at the time of ascending is measured by the temperature measuring device 12a. Further, the heat is transferred from the heating electronic component 6b to the circuit board 5 via the solder connecting portion 8b, and the temperature of the solder connecting portion 8b is measured by the temperature measuring device 12b. The control device 13 compares the temperature of the electronic component 6b measured by the temperature measuring device 12a with the heating curve previously set in the temperature diagram of the control device 13, and then gives an indication of the output of the laser oscillator when heated. The detected temperature of the temperature measuring device 12a is close to the target temperature of each period read by the temperature map, and after reaching the predetermined maximum temperature, an indication is issued so that the most extreme temperature is only maintained in the temperature map. Keep it time. Thus, the control in which the control device 13 is heated in accordance with the heating curve of the temperature map and the time at which the maximum temperature is maintained as the temperature map is applied to an example of the temperature increasing step of the present invention. The laser absorber 7b of the first embodiment is a material that absorbs the thermal energy of the laser beam ’ and is made of a material that is not damaged by the thermal energy of the laser beam, for example, a metal material such as iron, steel or aluminum. The electronic component 6b is generally molded by a resin mold. When the resin mold of the electronic component 6b is spliced to illuminate the f-beam 9 , the surface of the resin mold at the electronic component partially absorbs the beam of the beam 3b, and only the resin mold The surface part has a rapid temperature rise. 'When the surface temperature reaches, for example, 16 Gt or more, it will burn. $ 3 ® and Fig. 4 show that the Ray 13 201247061 beam 3b is directly irradiated to the electronic part 6b without using the laser absorber. The temperature change diagram of the electronic component 6b and the solder joint portion 8b when the surface of the resin mold is heated. Fig. 3 shows the temperature changes when the laser output is 20 W, and Fig. 4 shows the temperature changes when the laser output is 18 W. In Fig. 3 and Fig. 4, T1 represents the temperature change curve of the electronic component 6b, and T2 represents the temperature change curve of the solder joint portion 8b. For example, when the laser beam 20b is directly irradiated with the laser light 20W, the resin mold of the electronic component 6b is directly irradiated. When the surface is heated, a temperature change as shown in Fig. 3 occurs. That is, 'after 5 minutes after the laser irradiation, the temperature T1 of the electronic component 6b reaches 160 ° C. 'Electronic part 6b The grease mold portion is burnt. Further, the temperature T2 of the solder joint portion 8b at this time is 80. (:, the necessary temperature has not yet reached 105 ° C. Conversely, when the output of the laser beam 3b is lowered to 18 W, the resin When the surface portion of the mold is not scorched, as shown in Fig. 4, the temperature T1 of the electronic component 6b is 150 C or less 'but the temperature rises to 70 ° C even after 15 minutes after the temperature T2 of the solder joint portion 8 is saturated. In the saturated state, the input energy source to be supplied to the electronic component 6b and the heat radiation from the electronic component 6b and the circuit board 5 are in an equilibrium state, so that the temperature of the solder joint portion does not rise any more. Here, in the first embodiment, in order to increase the temperature of the electronic component 6b to a required temperature, the laser absorber 7b is placed on the electronic component 6b, whereby the heat energy is input even if the output of the south laser beam 3b is output. The electronic component 6b and the electronic component 6b are also not damaged by the thermal energy of the laser beam 3b, and this problem can be solved. λ Fig. 5 shows the heating of the embodiment 14 using the laser absorber 7b. 201247061 Cooling test In device 20 A temperature change diagram of the electronic component 6b and the solder joint portion 8b during the heat. For example, a more specific example of using the laser absorber 7b, the laser beam 30f, the laser beam diameter cp30mm, and the laser beam When irradiated to the laser absorber 7b, a temperature change as shown in Fig. 5 occurs. The laser is irradiated for 5 minutes, and the temperature T1 of the electronic component 6b reaches the electronic component, and the solder joint portion 8b is not blackened. The temperature T2 reaches 105. (:, and the temperature is maintained for the next 10 minutes. Further, in each of the figures, the arrows indicating the laser beams 3, 33, 31), 爻, 36 indicate the position at which the optical axis passes. . In this case, the laser beam 3b of the laser beam having a diameter of cp3 〇mm is irradiated to a substantially central position of the laser absorber of 35 mm square area placed on the 30 mm square area of the electronic component 6b. The entire upper surface of the electronic component 6b is heated, and the portion on the outer side of the laser absorber 7b is not irradiated, and only the electronic component is selectively heated. On the other hand, in order to increase the laser output to raise the temperature of the solder joint portion in a shorter period of time, the temperature of the electronic component 6b may be higher than that of the resin mold portion. Furthermore, in order to increase the temperature of the solder joint portion in a short period of time, the laser absorber 7 has a thermal charge of (four) direction in which the contact surface of the hot paste is to be passed through the electronic component. The anisotropic heat conductor having a large thermal conductivity in a direction perpendicular to the contact surface in contact with the heat conductive paste, for example, a graphite material or the like may be used. When the laser absorber having such an anisotropic heat conductor is destroyed, the laser beam 3b is rapidly and uniformly transmitted to the laser absorber 7b parallel to the contact surface of the electronic component 6b. In the surface of the laser irradiation side, on the other hand, it does not directly transfer heat to the thickness direction. Therefore, heat energy can be accumulated in the laser absorber 7b. Then, the heat energy is transmitted to the face side in contact with the electronic component 6b of the laser absorber 7b. Further, the heat-conductive paste passing between the laser absorber 7b and the electronic component 6b can be efficiently transmitted to the surface side of the laser absorber 7b that is in contact with the electronic component 6b, and the temperature of the solder joint portion 8b of the electronic component 6b is increased. . Therefore, even if the laser output is further increased, since the thermal energy can be accumulated in the laser absorber, the resin mold portion of the electronic component 6b is not burnt and the temperature of the solder joint portion 8b can be raised. Fig. 6 is a view showing changes in temperature of the electronic component 6b and the solder connecting portion 8b during heating in the heating and cooling test apparatus 20 of the first embodiment using the anisotropic heat conductor as the laser absorber 7b. In this specific case, when the electronic component 6b is irradiated with a laser output of 45 W and the laser beam diameter (p30 mm is irradiated to the laser absorber 7b, the temperature changes gradually as shown in Fig. 6.) After a minute, the temperature T1 of the electronic component 6b reaches 150 which is not blackened by the electronic component 6b. (:, and the temperature T2 of the solder joint portion 8b reaches 105 C' and then maintains the temperature within 5.5 minutes. Next, use the seventh diagram A test method for cooling in the heating and cooling test apparatus 20 of the present embodiment will be described. Fig. 7 is a view showing a configuration of cooling of the heating and cooling test apparatus 20 of the first embodiment. In Fig. 7, for easy understanding Note that only one electronic component 6b is displayed for the electronic component. 16 201247061 When the control device 13 cools, the laser beam 3 is excited by the laser oscillator (in the seventh figure, the laser beam is indicated by a broken line) The direction of the light beam 3), and the elevator 11 of the Peltier element 9 is controlled to raise the Peltier element 9 to the bottom surface of the T circuit substrate 5. At the same time, the control device 13 compares the solder connection measured by the temperature measurement M 12b. Temperature of part (10) The cooling curve of the temperature map previously set by the control device η controls the energization of the Peltier element 9 during cooling to make the detected temperature of the temperature canceller 123 close to each __ target read by the temperature map. Temperature, and after the minimum temperature of the arrival state, 'controls the energization to the Peltier element 9, so that the minimum temperature is only maintained at the retention time set in the temperature diagram. Thus the control device 13 cooperates with the cooling curve of the temperature diagram. The control for the time set by the cooling control 'the minimum temperature holding temperature map is applied to an example of the cooling step of the present invention. Fig. 8 shows the heating and cooling test in the first embodiment. The temperature change of the electronic component 6b and the material connection _. As shown in Fig. 8, when the temperature of the Peltier element 9 is set to -45 ° C during cooling, 'the laser irradiation is stopped after the laser is heated for 7.5 minutes. The Peltier element 9 is brought into contact with the circuit substrate 5, and the temperature T1 of the electronic component 6b reaches 峨 at a position of 95 minutes after 2 minutes. It is known that the time required for the addition or cooling is respectively larger than the conventional one. The type of test tank takes about 3 minutes, and can be shortened by about 1/4. Next, the control device 13 controls the above-mentioned temperature rising step and cooling step to alternately perform the heating and cooling test of the 'solid surface L'. The treatment of the m-heavy cooling money is an example of the reverse step of the present invention. The cooling step is carried out after the temperature rising step, but the heating step and the cooling step may be performed at the beginning of the repeating step. Alternatively, the heating step and the cooling step may be controlled at the end of the repeated step. The above description of the first embodiment is an example of the case where the electronic component 6b is one, but the laser is changed by the moving electron microscope 4. In the irradiation direction of the light beam 3, the laser beams 3a, 3b, 3c, and 3e are individually irradiated to the laser absorber 7a on any of the electronic components 6a, 6b, 6c, 6d, and 6e on the circuit board 5 in Fig. 1 , 7b, 7c, 7e. Further, for any of the electronic components 6a, 6b, 6c, 6d, and 6e, the most suitable laser condition is selected by the control device 13, and the laser output control is performed on the laser oscillator 1, which is available in the beam shaping optical system 2. The laser beam 3 is shaped to individually control the temperature profile of any of the electronic components 6a, 6b, 6c, 6d, 6e. In the conventional heating and cooling test, a plurality of heating and cooling tests of the electronic components 6a, 6b, 6c, 6d, and 6e are performed, for example, first, the electronic component 6a is initially subjected to a heating and cooling test for a predetermined cycle, and secondly, the same is true. The electronic components 6b, 6c, 6d, and 6e were subjected to a heating and cooling test of a predetermined cycle, thereby completing the heating and cooling test of the all-electronic components 6a, 6b, 6c, 6d, and 6e. On the other hand, in the case of the heating and cooling test apparatus 20 of the first embodiment, the laser absorbers 7a, 7b on the plurality of electronic components 6a, 6b, 6c, 6d, and 6e are scanned at high speed by the high-speed scanning electron microscope 4. 7c and 7e sequentially irradiate the laser beams 3a, 3b, 3c, and 3e in sequence, and simultaneously heat up the plurality of electronic components 6a, 6b, and 18 201247061 6c, 6d, and 6e. For example, at a high speed of 1 Hz, the scanning electron microscope 4 is positioned to illuminate the laser beam 3a, and the laser beams 7a, 7b, 7c, 7e on the plurality of electronic components 6a, 6b, 6c, 6d, and 6e are sequentially irradiated with the laser beam 3a, 3b, allow, 3e less than leap seconds. In the configuration of the present invention, there are four types of laser absorbers, &, 7b, and 7c, which are targets for laser irradiation, and therefore, for each of the laser absorbers, a few, a & The laser beam 3 is irradiated for two seconds in a second, and this action is repeated continuously. For example, for a laser wheel that is required to raise the temperature of one electronic component, by increasing the laser output by a factor of four, even if the laser beam is irradiated every 4 seconds, 3b, 3c, and 3e are only 1 second. The radiation absorbers, 7b, 7c, & can be heated with almost the same temperature profile as the continuous illumination. Then, the electronic parts 6a, 6b, &, ^, ^ are cooled by the Peltier piece 9 '. Therefore, this embodiment! In the configuration, since the five electronic components 6a, 6b, 6c, 6d, and _ can be subjected to the heating and cooling test, the five electronic components can be heated up by one time. Heating and cooling test. Therefore, the right use of the basic form! In the heating and cooling test method, the same electronic components are placed on the circuit board 5, and the electronic components are simultaneously heated and cooled under the same laser irradiation conditions, whereby the same heating and cooling conditions can be confirmed by one test. N increases. Even if the same electronic component is mounted, each electronic component can be simultaneously heated under different laser irradiation conditions. Therefore, the heating and cooling test under different heating conditions can be performed in one test. (Embodiment 2) FIG. 9 is a cross-sectional structural view of a main part of a heating and cooling test apparatus according to Embodiment 2 of the present invention. The same components as those in Fig. 2 use the same reference numerals. Fig. 9 shows the laser irradiation position of the laser beam 3b of the laser absorber 7b on the electronic component 6b. In the first embodiment, as shown in Fig. 2, the laser beam 3b is irradiated to the center of the laser absorber 7b on the electronic component 6b to generate an optical axis. However, in some of the electronic components 6b composed of a semiconductor package of a BGA, in some cases, a 1C wafer as the heat source 14 is disposed, and the central portion is switched. In the laser absorber 7b of the electronic component 6b, if the laser beam 3b is irradiated to the electronic component 6b by irradiating the laser beam 3b directly above the heat source 14, the heat state closer to the actual use state occurs again. A more reliable heating and cooling test can be performed. Therefore, the control device 13 of the second embodiment controls the electron microscope 4 to irradiate the laser beam 3b to the laser absorber 7b located directly above the heat source 14 of the electronic component 6b. (Embodiment 3) FIG. 10 is a configuration diagram at the time of heating of the heating and cooling test apparatus 21 according to Embodiment 3 of the present invention. The same components as those in Fig. 2 use the same reference numerals. As shown in Fig. 10, the control device 13 of the third embodiment performs control so that the laser beam 3b is completely scanned by the laser absorber 7b on the electronic component 6b of the electron microscope 4. i In the configurations of the first and second embodiments, since the laser beam 3b is fixedly irradiated to a predetermined position of the laser absorber on the electronic component 6b, the laser beam diameter of the irradiated laser beam 3b is When the area of the electronic component 6b is relatively large, it may not be possible to uniformly heat the entire surface of the laser absorber 7b. For example, when the electronic component 6b has a square area of 30 mm and the laser absorber 7b has a square area of 35 mm, if the laser beam diameter of the plOmm is irradiated (the laser beam 3b of plOmm is heated), it is difficult to be heated near the center of the upper surface of the electronic component. On the other hand, in the heating and cooling test apparatus 21 of the third embodiment, the laser beam 4b is used to completely scan the laser beam 7b on the electronic component 6b by using the electron microscope 4'. The electronic parts of a large area can also be roughly heated. Further, since the scanning area of the electron microscope 4 can be easily set freely, it can correspond to electronic parts and laser absorbers of various shapes or sizes. When the irradiation position of the laser beam 3b is scanned, the laser absorber 7b is scanned in a range where the laser beam 3b does not jump out of the outer side of the laser absorber 7b. When the irradiation range of the laser beam 3b jumps out of the laser absorber 7b In the case of the outside, it is heated to a part or substrate surface that does not need to be heated on the outer side of the laser absorber 7b. (Embodiment 4) The heating and cooling of Embodiment 11 of the present invention The components of the inspection device 2 2 are denoted by the same reference numerals as those of the first embodiment. Fig. 11 shows the selective cooling of the electronic components 6a, 6b, 6c, 6d, and 6e. As shown in the figure, the Peltier element 9 is in full contact with the bottom (four) of the circuit board 5 for cooling. 21 201247061 However, sometimes under the actual circuit substrate 5, there are protrusions of other electronic parts or connectors. a, 10b, in this case, the Peltier element 9 cannot be completely contacted with the lower surface of the circuit board 5. Therefore, in the heating and cooling test apparatus 22 of the fourth embodiment, on the top of the Peltier element 9 (with the circuit) The surface of the substrate 5 is in contact with the local cooling plates 15a, 15b, 15c, which are composed of, for example, copper and aluminum, and are smaller than the dimensions of the lower surface of the electronic components 6a, 6b, 6c, 6d to be cooled. It is large and has good thermal conductivity. Thus, the projections 10a and 10b on the lower surface of the circuit board 5 can be avoided, and the electronic components 6a, 6b, 6c, and 6d can be selectively cooled. In the configuration of the fourth embodiment shown in Fig. 11 Because the system does not want to make the electronic parts 6e cold Therefore, the local cooling plate is not attached to the position of the lower portion of the Peltier element 9. That is, in the fourth embodiment, only the installation position and shape of the local cooling plate can be changed, and various configurations of the plurality of electronic components can be performed. (Embodiment 5) Fig. 12 is a configuration diagram of a heating and cooling test apparatus 2 3 according to Embodiment 5 of the present invention. The same components as those in Fig. 1 are denoted by the same reference numerals. The heating and cooling test apparatus 23 of the fifth embodiment is a system. As shown in Fig. 12, the main portion is in the closable test slot 16, and the laser beams 3a, 3b, 3c, 3e are illuminated by a through window 17 mounted on one of the outer circumferences of the test slot 16. The laser absorbers 7a, 7b, 7c, and 7e. Further, the test tank 16 is provided with a displacement device 18 which allows the inside of the test tank 16 to be vacuumed and replaced with another gas. Further, the test tank 16 is an example of a sealed tank of the present invention, and the through-the-window 17 is 22 201247061. An example of a portion of the present invention which is made of a material having permeability to a laser beam is a heating and cooling test of the first to fourth embodiments. In the apparatus, since the electronic components 6a, 6b, 6c' 6d, 6e are cooled by using the Peltier element 9 in the atmosphere, when the cooling temperature drops to -45 ° C, sometimes the Peltier element 9 is dew condensation and the circuit The cooling performance of the substrate 5 or the electronic components 6a, 6b, 6c, 6d, and 6e is lowered. In contrast, the heating and cooling test device of the fifth embodiment can make the test tank 16 a low-humidity environment and a vacuum environment, and is an argon gas inert gas environment, which can prevent condensation and prevent cooling performance. . Further, in each of the embodiments, the Peltier element 9 is used as a cooling device, but other cooling devices may be used. For example, the gas refrigerant may be cooled by the lower surface of the circuit board 5. As described above, by using the heating and cooling test method of the present invention, for a plurality of electronic parts having different shapes, the same heat conduction phenomenon as that of the self-heating is generated, which can not only give the temperature of the thermal process which causes the actual breaking of the image. The cycle 'can also be tested for reliability in a short time. It is also possible to use a plurality of electronic zero-phase or pin temperature cycles of various shapes. Further, in the heating and cooling device of the above embodiment, any of the Peltier elements 9' may be provided, but the Peltier element 9 may not be provided. That is, the laser is used for heating the electrons 6b 6c, 6e, 6d, and 6e, and the cooling can be performed by using a furnace. Even in such a configuration, the efficiency can be improved because the temperature in the temperature rising step can be greatly shortened compared to the temperature rise and cooling of the double branch. 23 201247061 Further, in the above embodiment, a plurality of electronic components are mounted, but only one electronic component may be mounted. Further, in the above embodiment, the laser absorbing system is placed on the electronic component through the heat conductive paste, but may be directly placed on the electronic component without transmitting the heat conductive paste. INDUSTRIAL APPLICABILITY The heating and cooling test method and the heating and cooling test device of the present invention have an effect of easily increasing the temperature without using a Peltier element in the temperature increasing step, and are applicable not only to the reliability test but also to the temperature imparting. The use of surface treatment such as heat treatment of the cycle. I: BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a configuration diagram of a heating and cooling test apparatus in Embodiment 1 of the present invention. Fig. 2 is a view showing the configuration of a heating and cooling test apparatus according to Embodiment 1 of the present invention. Fig. 3 is a graph showing the temperature change at the time of heating when the laser absorber is not used. Fig. 4 is a graph showing changes in temperature at the time of heating when the laser absorber is not used. Fig. 5 is a graph showing changes in temperature during heating in the first embodiment of the present invention. Fig. 6 is a graph showing the temperature change during heating in the first embodiment of the present invention. Fig. 7 is a view showing the configuration of the heating and cooling test apparatus in the first embodiment of the present invention when it is cooled 24 201247061. Fig. 8 is a graph showing temperature changes during heating and cooling in the first embodiment of the present invention. Fig. 9 is a cross-sectional structural view showing the principal part of the heating and cooling test apparatus in the second embodiment of the present invention. Fig. 10 is a view showing the configuration of a heating and cooling test apparatus in the third embodiment of the present invention when it is heated. Fig. 11 is a view showing the configuration of a heating and cooling test apparatus in the fourth embodiment of the present invention. Fig. 12 is a view showing the configuration of a heating and cooling test apparatus in the fifth embodiment of the present invention. Figure 13 is a schematic view for explaining a conventional heating and cooling test method. [Explanation of main component symbols] 1.. Laser oscillators 10, 10a, 10b, ... protrusions 2. Beam shaping optical system 11 ... elevators 3, 3a, 3b, 3c, 3e... Light beam 12a, 12b. · Temperature measuring device 4.. Electron mirror 13... Control device 5. Circuit board 14... Heat source 6a, 6b, 6c, 6d, 6e... Electronic zero 15a, 15b, 15c.·.Local cooling plate member 16...Testing grooves 7a, 7b, 7c, 7e...Laser absorber 17...Transparent window 8a, 8b...Solder connection portion 18... Replacement device 9.. Peltier element 20, 2, 22, 23... heating and cooling test 25 201247061 Inspection device 105 101... Peltier element 106 102... Thermocouple 107 103... Current control device 108 104.. Temperature measuring device, on-resistance measuring device, temperature time control device, circuit board, electronic component 26

Claims (1)

201247061 七、申請專利範圍: 1. 一種加熱冷卻試驗方法,為了評價安裝有電子零件之電 路基板,具有下述步驟: 昇溫步驟,係使前述電子零件昇溫者; 冷卻步驟,係用以冷卻前述電子零件者;及 反覆步驟,係交互地反覆前述昇溫步驟及前述冷卻 步驟者, 其中在前述昇溫步驟中,將雷射光束照射於載置於 前述電子零件上之雷射吸收體而加熱,藉此使前述電子 零件昇溫。 2. 如申請專利範圍第1項之加熱冷卻試驗方法,其中前述 電子零件係安裝複數個於前述電路基板,且前述冷卻步 驟中,藉由冷卻裝置由前述電路基板之未安裝有前述電 子零件之側的面冷卻前述電子零件。 3. 如申請專利範圍第1項之加熱冷卻試驗方法,其中前述 雷射吸收體之下面比前述電子零件之上面外形大。 4. 如申請專利範圍第1〜3項中任一項之加熱冷卻試驗方 法,其中前述雷射吸收體之下面係透過熱傳導糊而接觸 前述電子零件之上面,且前述雷射吸收體係平行於前述 下面之面方向的熱傳導率比垂直於前述下面之面方向 的熱傳導率大之異方性熱傳導體。 5. 如申請專利範圍第1項之加熱冷卻試驗方法,其中前述 昇溫步驟中係根據前述電子零件之表面溫度之測定 値,至少控制前述電子零件之最高溫度及前述最高溫度 27 201247061 之保持時間,並在前述冷卻步驟中,根據前述測定値, 至少控制前述電子零件之最低溫度及前述最低溫度之 保持時間。 6. 如申請專利範圍第1項之加熱冷卻試驗方法,其中前述 昇溫步驟中,將前述雷射光束照射於前述雷射吸收體 時,於前述雷射吸收體之上面之位於前述電子零件之發 熱源正上方的部分照射前述雷射光束。 7. 如申請專利範圍第2項之加熱冷卻試驗方法,其中前述 昇溫步驟中,係對安裝於前述電路基板上之複數前述電 子零件,以電鏡控制前述雷射光束之照射位置,且照射 在載置於任意之前述電子零件上之前述雷射吸收體。 8. 如申請專利範圍第7項之加熱冷卻試驗方法,其中前述 昇溫步驟中,係藉由前述電鏡而使前述雷射光束以平面 方式掃描前述雷射吸收體之上面全體,將前述雷射光束 照射於前述雷射吸收體。 9. 如申請專利範圍第1項之加熱冷卻試驗方法,其中前述 冷卻裝置為固體冷卻體,在前述冷卻步驟中,係使設置 於前述固體冷卻體之局部冷卻板接觸前述電路基板之 未安裝有前述電子零件之側之前述面之對應於前述電 子零件之各個位置而進行冷卻。 10. 如申請專利範圍第1項之加熱冷卻試驗方法,其中前述 電路基板及前述冷卻裝置設置於業經密閉之槽中,並且 前述槽之至少一部份係由對前述雷射光束具有透過性 之材料所構成, 28 201247061 前述昇溫步驟中,由前述槽之外部,透過由前述具 有透過性之材料所構成之部分,而將前述雷射光束照射 於載置於前述電子零件上之前述雷射吸收體。 11. 如申請專利範圍第10項之加熱冷卻試驗方法,其中可 將前述槽内之環境變更為低濕度環境、真空環境、及不 活性環境之任一者。 12. —種加熱冷卻試驗裝置,係可評價安裝有電子零件之電 路基板者,包含有: 雷射振盪器,係使雷射光束振盪者; 光束整形光學系統,係將前述雷射光束整形者; 冷卻裝置,係冷卻前述電子零件者; 溫度測定器,係測定前述電子零件溫度者; 雷射吸收體,係載置於前述電子零件上面者; 控制裝置,係反覆進行將前述雷射光束照射於載置 於前述電子零件上面之前述雷射吸收體之上面,使前述 電子零件昇溫之昇溫步驟、及使前述電子零件冷卻之冷 卻步驟者。 13. 如申請專利範圍第12項之加熱冷卻試驗裝置,其中前 述控制裝置係控制由前述雷射振盪器振盪之前述雷射 光束之雷射輸出及照射時間,又,控制由前述光束整形 光學系統所整形之前述雷射光束的形狀。 14. 如申請專利範圍第12或13項之加熱冷卻試驗裝置,其 中前述電子零件安裝於前述電路基板複數個,且具有電 鏡,可對安裝於前述電路基板上之複數前述電子零件控 29 201247061 制前述雷射光束之照射位置,將前述雷射光束照射於載 置於任意之前述電子零件之前述雷射吸收體。 30201247061 VII. Patent application scope: 1. A heating and cooling test method, in order to evaluate a circuit board on which an electronic component is mounted, has the following steps: a temperature rising step for heating the electronic component; and a cooling step for cooling the electron And the step of repetitively repeating the step of heating and the step of cooling, wherein in the step of heating, the laser beam is irradiated onto the laser absorber placed on the electronic component and heated The aforementioned electronic components are heated. 2. The heating and cooling test method according to claim 1, wherein the electronic component is mounted on the plurality of circuit boards, and in the cooling step, the electronic component is not mounted on the circuit substrate by a cooling device. The side faces cool the aforementioned electronic components. 3. The heating and cooling test method of claim 1, wherein the underside of the laser absorber is larger than the upper surface of the electronic component. 4. The heating and cooling test method according to any one of claims 1 to 3, wherein the underside of the laser absorber is in contact with the upper surface of the electronic component through a heat conductive paste, and the laser absorption system is parallel to the foregoing The anisotropic heat conductor having a thermal conductivity in the direction of the lower surface is larger than the thermal conductivity in the direction perpendicular to the surface of the lower surface. 5. The heating and cooling test method according to claim 1, wherein the temperature increasing step controls at least a maximum temperature of the electronic component and a retention time of the highest temperature 27 201247061 according to the surface temperature of the electronic component. And in the cooling step, at least the minimum temperature of the electronic component and the retention time of the minimum temperature are controlled according to the measurement enthalpy. 6. The heating and cooling test method according to claim 1, wherein in the heating step, when the laser beam is irradiated onto the laser absorber, heat is generated in the electronic component above the laser absorber The portion directly above the source illuminates the aforementioned laser beam. 7. The heating and cooling test method according to claim 2, wherein in the heating step, the plurality of electronic components mounted on the circuit substrate are controlled by an electron microscope to control an irradiation position of the laser beam, and the irradiation is carried out. The aforementioned laser absorber placed on any of the aforementioned electronic components. 8. The heating and cooling test method according to claim 7, wherein in the heating step, the laser beam is scanned in a planar manner by the electron beam to scan the entire upper surface of the laser absorber, and the laser beam is irradiated. Irradiation to the aforementioned laser absorber. 9. The heating and cooling test method of claim 1, wherein the cooling device is a solid cooling body, and in the cooling step, the local cooling plate disposed on the solid cooling body is in contact with the circuit substrate. The surface of the side of the electronic component is cooled corresponding to each position of the electronic component. 10. The heating and cooling test method of claim 1, wherein the circuit substrate and the cooling device are disposed in a sealed groove, and at least a portion of the groove is transparent to the laser beam. 28 201247061 In the heating step, the laser beam is irradiated onto the laser beam placed on the electronic component by passing through a portion of the transparent material from the outside of the groove. body. 11. The heating and cooling test method of claim 10, wherein the environment in the tank is changed to a low humidity environment, a vacuum environment, and an inactive environment. 12. A heating and cooling test device for evaluating a circuit board on which electronic components are mounted, comprising: a laser oscillator for oscillating a laser beam; and a beam shaping optical system for shaping the aforementioned laser beam a cooling device that cools the electronic component; a temperature measuring device that measures the temperature of the electronic component; a laser absorber that is placed on the electronic component; and a control device that repeatedly irradiates the laser beam And a step of heating the upper surface of the laser absorber placed on the electronic component, and heating the electronic component to cool the step of cooling the electronic component. 13. The heating and cooling test apparatus according to claim 12, wherein the control device controls a laser output and an irradiation time of the laser beam oscillated by the laser oscillator, and is controlled by the beam shaping optical system. The shape of the aforementioned laser beam that is shaped. 14. The heating and cooling test apparatus according to claim 12 or 13, wherein the electronic component is mounted on the plurality of circuit boards and has an electron microscope, and the plurality of electronic components mounted on the circuit board are controlled by 29 201247061 At the irradiation position of the laser beam, the laser beam is irradiated onto the laser absorber placed on any of the electronic components. 30
TW101100185A 2011-03-04 2012-01-03 Heating and cooling test method and heating and cooling test device TWI542267B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011047835A JP5552452B2 (en) 2011-03-04 2011-03-04 Heating / cooling test method and heating / cooling test apparatus

Publications (2)

Publication Number Publication Date
TW201247061A true TW201247061A (en) 2012-11-16
TWI542267B TWI542267B (en) 2016-07-11

Family

ID=46812608

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101100185A TWI542267B (en) 2011-03-04 2012-01-03 Heating and cooling test method and heating and cooling test device

Country Status (4)

Country Link
JP (1) JP5552452B2 (en)
KR (1) KR101743046B1 (en)
CN (1) CN102680345A (en)
TW (1) TWI542267B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI698964B (en) * 2019-03-15 2020-07-11 台灣愛司帝科技股份有限公司 Chip fastening structure and chip fastening apparatus

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103245583A (en) * 2013-04-07 2013-08-14 上海交通大学 Device and method for rapidly evaluating service life of heating element
CN110295270A (en) * 2019-06-04 2019-10-01 沈阳中科煜宸科技有限公司 A kind of pair of thin sheet surface laser-quenching method
CN112033473A (en) * 2020-09-15 2020-12-04 中车株洲电力机车研究所有限公司 Combined evaluation test method for welding reliability of electronic component
CN112285595B (en) * 2020-10-15 2023-10-10 深圳市南北半导体有限责任公司 Circulation test method for LED lamp beads
CN113484363B (en) * 2021-06-29 2023-05-23 重庆长安新能源汽车科技有限公司 Test device and method for simulating internal heating of controller
CN114923724B (en) * 2022-07-22 2022-10-28 西安交通大学 Gradient thermal shock and thermal fatigue test device and method for aerospace vehicle structure
KR20240059724A (en) 2022-10-26 2024-05-08 재단법인 한국기계전기전자시험연구원 A light quantity measuring device with temperature control

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0743639Y2 (en) * 1989-11-30 1995-10-09 株式会社島津製作所 Temperature cycle test equipment
JP3088490B2 (en) * 1991-06-21 2000-09-18 タバイエスペック株式会社 Temperature and humidity tester
JP2606584B2 (en) * 1994-05-24 1997-05-07 日本電気株式会社 Image recording device
EP2086306B1 (en) * 1997-04-04 2013-06-05 Delta Design, Inc. Temperature control system for an electronic device
JP2002134668A (en) * 2000-10-26 2002-05-10 Nec Corp Reliability testing method and reliability testing device
US6568846B1 (en) * 2000-11-15 2003-05-27 The United States Of America As Represented By The Secretary Of The Army Pulsed laser heating simulation of thermal damage on coated surface
JP2003075381A (en) * 2001-09-04 2003-03-12 Nippon Steel Corp Defect detector and method for detecting defect of metal band, computer program therefor, and computer- readable storage medium
JP4031631B2 (en) * 2001-10-24 2008-01-09 三菱重工業株式会社 Thermal barrier coating material, gas turbine member and gas turbine
KR100637724B1 (en) * 2005-05-30 2006-10-25 한국산업기술평가원(관리부서:산업기술시험원) Thermal shock tester of electronic part
JP4860596B2 (en) * 2007-12-05 2012-01-25 長野県 Thermal test equipment
JP2009300202A (en) * 2008-06-12 2009-12-24 Toshiba Corp Method and system for inspecting semiconductor device
CN101929935A (en) * 2009-06-25 2010-12-29 中国科学院力学研究所 Piston heat load test device and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI698964B (en) * 2019-03-15 2020-07-11 台灣愛司帝科技股份有限公司 Chip fastening structure and chip fastening apparatus

Also Published As

Publication number Publication date
JP5552452B2 (en) 2014-07-16
JP2012185016A (en) 2012-09-27
CN102680345A (en) 2012-09-19
KR20120100732A (en) 2012-09-12
TWI542267B (en) 2016-07-11
KR101743046B1 (en) 2017-06-02

Similar Documents

Publication Publication Date Title
TW201247061A (en) Heating/cooling test method and heating/cooling test apparatus
TWI734871B (en) Mounting table and electronic component inspection device
WO2018100881A1 (en) Placement stand and electronic device inspecting apparatus
JP2013157600A (en) Two-beam laser annealing with improved temperature performance
Pahinkar et al. Transient liquid phase bonding of AlN to AlSiC for durable power electronic packages
Barako et al. A reliability study with infrared imaging of thermoelectric modules under thermal cycling
Skwarek et al. High temperature thermogenerators made on DBC substrate using vapour phase soldering
CN102818820B (en) System for measuring heat conductivity coefficient of nano materials based on vanadium dioxide nano wires
JP2024052751A (en) Mounting table and inspection device
JP6024938B1 (en) Semiconductor wafer inspection apparatus and semiconductor wafer inspection method
JP2014130898A (en) Test device and test method for electronic device
Zhang et al. Observation and measurement of temperature rise and distribution on GaAs photo-cathode wafer with a 532 nm drive laser and a thermal imaging camera
JP2008170179A (en) Autohandler
JPH11238483A (en) Charged particle beam device
TW201334016A (en) Method and system for identifying defects on substrate
JPH07119647B2 (en) Light intensity measuring device
JP2012230012A (en) Method and device for heating and cooling test
JPH1144727A (en) Circuit board inspecting device
JP2012222263A (en) Failure analysis method of semiconductor device, failure analysis method of chip-like semiconductor device and dynamic failure analysis device of semiconductor device
JP2003215162A (en) Probe card, and semi-conductor measuring instrument provided with the same
JP2011007671A (en) Testing apparatus
JP2008196920A (en) Burn-in apparatus, burn-in test method, and contact state detection method
JP6410586B2 (en) Test equipment
JP2014190801A (en) Semiconductor device temperature controller
JP2007171095A (en) Liquid crystal substrate inspection device

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees