TW201246435A - Substrate processing apparatus - Google Patents
Substrate processing apparatus Download PDFInfo
- Publication number
- TW201246435A TW201246435A TW100143528A TW100143528A TW201246435A TW 201246435 A TW201246435 A TW 201246435A TW 100143528 A TW100143528 A TW 100143528A TW 100143528 A TW100143528 A TW 100143528A TW 201246435 A TW201246435 A TW 201246435A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- transport
- batch
- processing
- wafer
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67727—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations using a general scheme of a conveying path within a factory
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
- H01L21/67781—Batch transfer of wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
- H01M14/005—Photoelectrochemical storage cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Robotics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Abstract
Description
201246435 六、發明說明: " 【發明所屬之技術領域】 【0001】 置,板表面施加微細加工之處理的基板處理裝 以進«板傳送至各製程之處理裝置 【先前技術】 【0002】 產線is線太陽電池板等之生 串製程的多種處理Μ二”統雄、集配置有對應於-連 (半導體晶圓、玻璃基板等處理對象的基板 驟處理。尤其,於—連聿、f處理4置’來進行一連串的步 is⑽=需時間為=== 間㈣树置 情形,由於製程時單片式處理I置與批次式處理裂置的 築線上==間形f,著ί異,、而非常難以i 成的單片線上系統,將批次式處片式處理裳置所構 單片線上純結束全部之單置分離出喊置,並將已於 盒,而以搬運車等搬入至批次=處基板暫時收納到晶圓n 從所搬入之晶圓匣各t袁置,於批次式處理裝置, 數方式載入至並將基板以每次載入批次處理片 ,器内施加整批的批次處理,比^^器(腔室),再於處 益搬出晶圓舟,來將已處理的基板、ϋ理結束後,從處理容 【習知技術文獻】 仗曰曰0舟移至晶圓匣盒而移出。 201246435 【0004】 【專利文獻1】日本特開2003-152047號公報 【發明内容】 [發明所欲解決的問題] 【0005】 如上述,以往未能確立出在單片式處理 置之間連續而有效率地搬運基板的技術,而‘過乂 理! 區等以進打基板的授受,欲將混雜有單片處理^ 批次混載處理的處理量提高係屬非常困難。/、批-人處理之早片 【0006】 本發明為解決如上述之習知技術㈣題 理裝置,其能於單片式處理裝置與廣 且有效率的基板搬運,而使單片/^H 忒置之間進仃連 【0007】 蚊抑/批-人4處理的處理量提高。 而且,本發明還提供基板處理裝置,苴 。 處理量。~ _ ‘搬i的效率而提; [解決問題之技術手段] [0008】 板依投入之蝴 ίί第單=距時間的週期^ 而反複進行該第2單片處理;^ u 距時間的週期, 的基板,並將該從第!單片式處理單片處理 批次處理片數方式搬入至古亥第丨 牵、土板以母批集合s亥 亥弟1批认式處理部,從該第1批次式 201246435 處理部集中搬出已完成該 2 〇〇 早 .抵 . 板,並將該從第1批次^命批次處理之該批次處理片數的基 單片式處理部,從嗦第$,理部所搬出的基板逐片搬入至該第1 片處理的基板,並5處理部逐片搬出已完成該第2 . 集合該批次處理片數早片式處理部所搬出的基板以每_ 批次式處理部集中搬出該第1批次式處理部,從該第i 的基板,並將該從批次^2批次處理之該批次處理片數 【0009】 处所搬出的基板加以搬運往後段。 處理部-第。J板-面以第1單片式 於苐1批次式處理部i受jus部接受第1單片處理,接著 部接受第2單片處理,j 著於第2單片式處理 理,然後被搬送至後段。、第1批:人式處理部接受第2批次處 【0010】 理的基::5:=丄:二ϋ理,逐片搬出已完成第1單片處 處理部的中介。又,該搬送片4;,:第1批次式 逐片搬入至第2單i =板後,再將該已搬出的基板 單片式處理t;中介式當Γ批次式處理部—第2 合批次處理片數方式搬入至第1批文义'板以每批集 .式處理部,批次式處理介式處理部,以擔當第2單片 【0011】 如上述,交織地進行將基板逐片搬 地整批搬運的批次搬運,因此不僅是不二= 4置之間、及不_各批次式處理裝置之間,即便在單片= 201246435 5裝之間,也能進行連續而有效率的基板搬 【0012】吏拜片/批:人混載處理的處理量大幅提高。 處理ΐιϊίί〗1 ίίί式處理裂置兼用在對於已結束第1單片 ϋ處理、及對於已結束第2料處理之基板 減少電力等人Γ耗電 式處理裝置的硬體成本減半,並且能 【0013】 第i觀點的基板處理裝置包含有:批次式處理部, ,於以既疋產距時間之週期連續投人的基板,每 ,=數’而反複進行所希望之批次處理;複數之晶圓舟,將該 列而固持’以進行該批次處理;搬 ίίί 個晶圓舟’直至達到該批次處理片數,並且從 圓舟每次複數片地取出已完成該批次處理後的ί ί構ϋίΐΐ成ί清空狀態·’及晶圓舟移送部,設於該搬運 ίίϊΐίίΐί部之間’對於該複數之晶圓舟,依序將已裝 j板達擁次處刻數的任—個晶圓舟,從該搬運機構 接取的位置移往該批次式處理部,並將 之該批次處理片數之基板的其他任一個 部移往該搬運機構可進行接取的位置。㈣k雜-人式處理 【0014】 觀關基域雜置巾,彻上運機構之單 或單片式搬送部往該批次式處理部的基板搬運⑷ 下游側之其他批次式處理部或批次式搬送部的基L 搬運仔以整合,而連續且有效率地進行。 【0015】 對於3 _喊減理裝置包含有:減歧理部, ,;母-人既疋城片地投人的基板,每次針對既定批次處理片 201246435 • ί 希望之批次處理;複數之晶圓舟,將該批次處 ϊϊΐίϊϋ®舟’依序將要接受該批次處理前的基板加以每 Ϊ;™ ^ 5 ^ 直至該晶圓舟成::ί 成該批次處理後的基板, 與該批次式處理部於舟移送部’設於該搬運機構 的位置移往該批次式^部該ΐ運機構可進行接取 往該搬運機構可個晶圓舟,從該批次式處理部移 【0016】 次裝,湘上述_構之批 處理部或批次式呈中’使得從上游側之批次式 次式處理部往下游側之其、與從該批 搬運得以整合,而連續且有效率或早片式搬送部的基板 【0017】 路線本理她含有:第1及第2搬運 在該第"般運路=於該第1搬運路線上, 在該第2搬運路線之 ς:二::_弟2 fci 線之另-端㈣m —賴位置、與該第2搬運路 1搬運機 :來在第1 «運基板的!個或複^2^===在”二 處理。15,配置於該第1 線之另一端所設有第1卸料位置之間進、行U、與該第1搬運路 具有-次承載該既定片數之基 ’第2搬運梭, 線之另-端所設有第2二:戰位置、與該第 構’設置成可與該第丨及第2 移動;第1搬運機 ίϊϊ,運基板的1個或複數^第1搬‘;ϋΐ用來在第1 内搬運基板的!個裇^立。置取,具有用來在 在該第2搬運路線之一 基 搬運心^ 201246435 及第2區域中的至少一者,用來對基板施加所希望之單片處理或 批次處理,且該第1搬運機構使用該第1搬運臂,而於該第1及 第2裝載位置將該既定片數之基板載入至該第i及第2搬運梭’ 2搬運機構使用該第2搬運臂,而於該第丨及第2卸料位置 從:亥第1及第2搬運梭卸下該既定片數之基板;並且獨立地進行: 以该第1搬運梭將基板從該第丨裝載位置搬運往該第丨卸料位置 的動作、與以該第2搬運梭將基板從該第2裝載位置搬運往該 卸料位置的動作。 【0018】 ;上述第4觀點的基板處理裝置中,如上述般地獨立進 搬運梭縣板從第1裝載位置往第1㈣位置加以單片或 ^搬運的動作、與以第2搬運梭將基板從第2賴位置往該第^ 卸料位置加以單片或批次搬運的動作。 【_】 力1搬運機構只要於第1或第2搬運梭之任一者停留 ii上ί\2 ί載位置的期間’載入1片基板或整批載入複數片 ,構則只要於第1或第2搬運梭之任一者i 運=配=1,2搬運梭之固定性且 在意對方側之搬運機構的動的傳遞或傳送即可,並無須 【0020】 路線本料置包含有··第1及第2搬運 j有’,既定片數之μ的二i相;’ 線裝載位置、與該第1搬運路 具有-次承載該既定片數^ 丁,移動;第2搬運梭, 搬運路線之另—端^設有第2裝載位置、與該第2 而所。又有第2卸料位置之間進行往返移動;第! 201246435 • 搬運機構,設置成可與該第1及第2裝載位置進行接取,具有用 來在第1區域内搬運基板的1個或複數之第1搬運臂;第2搬運 枝構,a又置成可與§亥第1及第2卸料位置進行接取,具有用來在 第2區域内搬運基板的1個或複數之第2搬運臂;及處理部,配 置於該第1及第2區域中的至少一者,用來對基板施加所希望之 單片處理或批次處理;且該第丨搬運機構使用該第丨搬運臂,而 於該第1及第2裝載位置將該既定片數之基板載入至該第丨及第2 搬運梭,該第2搬運機構使用該第2搬運臂,而於該第1及第2 卸料位置從該第1及第2搬運梭卸下該既定片數之基板;並且交 替地進行.以該第1搬運梭將基板從該第丨裝載位置搬運往該第i 卸料位置的動作、與以該第2搬運梭將基板從該第2裝載位置搬 運在§亥第2卸料位置的動作。 [0021] 、於上述第5觀點的基板處理裝置中,以一定的產距時間而如 上述般地父替行:以第i搬運梭將基板從第丨裝載位置往第工 ^料位置加以單 錄次搬賴動作、與以第2搬運梭將基板從 弟2裝載位置往該第2卸料位置加以單片或批次搬運 【0022】 ί 5搬運機構只要於第1及第2搬運梭以產距時間之 敫:留在第1及第2裝載位置的期間,載入1片基板或 1載^數^基板即可。第2搬運機構則只要於第1及第2搬 ,巧產距時間之週期交替地停留在第丨及第2卸料位置的期 二d ^基板或整批卸下複數片基板即可。各搬運機構只要 產運梭之固定性且週期性的往返動作,而直接以 進行基板的傳遞或傳送即可,並無須在意對方側 之搬運機構的動作或狀況。 【0023】 方向第6觀點的基板處理裝置包含有:搬運線,在水平 搬i機;^ =理紐從處理流程之上游側往下游側進行搬運;第1 搬運㈣’ §邊雜運線上,每次蚊諸地與其顺所配置之 201246435 第1單_片,處理部進行基板傳遞;第2搬運機構,設於該搬運線 上之較該第1搬運機構為下游側,每次該既定片數地與其周圍所 配置2單片式處理部進行基板傳遞;與第1及第2搬運梭, 可進行往返移動,係構成該搬運線的一個區間,分別將基板每次 該既定片數地從接鄰於該第〗搬運機構的第丨及第2裝載位置, 於該第2搬運機構的第1及第2卸料位置加以載入而個別 地搬運。 [0024] 於本發明之第6觀點的基板處理裳置中,可獨立地進以 ^,運梭職板從第丨賴位置往第201246435 VI. Description of the Invention: " [Technical Fields of the Invention] [0001] A substrate processing process in which a micro-machining process is applied to a surface of a board, and a processing device for transferring the sheets to each process [Prior Art] [0002] A variety of processes for the production process of the solar cell such as the solar cell, such as a semiconductor wafer or a glass substrate. In particular, the substrate is processed. Processing 4 sets 'to perform a series of steps is(10)=required time is === (4) tree setting situation, due to the single-chip processing of the process and the batch processing of the cracked building line == the shape f, Different, and very difficult to achieve a single-chip online system, the batch-type processing of the single-chip line is purely finished, the whole single is separated and shouted, and will be in the box, and the truck After loading into the batch = the substrate is temporarily stored in the wafer n. From the wafer to be loaded, the batch processing device is loaded into the batch processing device and the substrate is loaded into the batch processing sheet each time. , the whole batch of batch processing is applied in the device, compared to the ^^ device (chamber Then, the wafer boat is moved out of the container to remove the processed substrate and the processing, and then removed from the processing capacity [Practical Technical Document] 至0 boat to the wafer cassette. 201246435 [0004] [Problem to be Solved by the Invention] As described above, conventionally, it has not been possible to continuously and efficiently transport a substrate between monolithic processing units. The technology, and 'over-rule! District to accept the substrate to accept, to mix the single-chip processing ^ batch mixing processing processing is very difficult. /, batch-person processing early film [0006 The invention solves the above-mentioned prior art (4) problem-solving device, which can carry the monolithic/^H device between the single-chip processing device and the wide and efficient substrate transfer [0007] The amount of treatment of the mosquito/batch-human 4 treatment is improved. Moreover, the present invention also provides a substrate processing apparatus, 处理. Processing amount. ~ _ 'The efficiency of moving i; [Technical means to solve the problem] [0008] Input the butterfly ίί第单=The period from time ^ and repeat this The second monolithic processing; ^ u from the time period of the substrate, and the number of the single-chip processing single-chip processing batch processing number into the Guhai Dihao, the soil board to the mother batch collection s In the first batch of the 2012-0435 processing unit, the Haihedi 1 batch recognition processing unit has collectively removed the 2nd batch. The board has been processed, and the batch is processed from the first batch. The base single-chip processing unit of the number of times of processing is carried out from the substrate of the first processing unit to the first processing substrate, and the processing unit is carried out one by one. The second processing unit is completed. Batch processing sheet number The substrate carried out by the early sheet processing unit is collectively carried out by the first batch type processing unit from the ith batch processing unit, and the batch is batched from the i-th substrate. The number of processed batches of the batch [0009] The substrate carried out at the location is transported to the subsequent stage. Processing Department - No. The J plate-surface is subjected to the first monolithic processing by the jus unit in the first monolithic processing unit i, and the second monolithic processing is performed by the second unit, and the second monolithic processing is performed. It was moved to the back section. , the first batch: the human processing unit accepts the second batch [0010] The rational basis:: 5: = 丄: second processing, the mediation of the processing unit of the first single piece is carried out one by one. Moreover, the transporting sheet 4;: the first batch type is carried into the second single i=plate one by one, and then the unloaded substrate is processed by a single piece t; the intermediate type is a batch type processing unit- (2) The batch processing method is carried out to the first batch of the textual 'plates, and the batch processing unit and the batch processing medium processing unit are used to act as the second single piece. [0011] As described above, the interleaving is performed. The substrate is transported in batches and transported in batches, so it can be carried out not only between the two sets, but also between the batch processing devices, even between the single piece = 201246435 5 Continuous and efficient substrate transfer [0012] 吏 片 片 / batch: The processing capacity of human mixing processing is greatly improved. The processing cost of the 1 ϊ ί 1 1 兼 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理[0013] The substrate processing apparatus according to the first aspect includes a batch type processing unit that repeatedly performs a desired batch process for each of the substrates that are continuously injected in a cycle of the production time interval; a plurality of wafer boats, holding the column for 'to perform the batch processing; moving the wafer boat' until the batch processing number is reached, and the batch is completed from the round boat every time The processed ί ϋ ϋ ΐΐ ΐΐ 清空 清空 清空 清空 清空 清空 清空 清空 清空 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆Any one of the wafer boats is moved from the position picked up by the transport mechanism to the batch processing unit, and any other part of the batch processed substrate is transferred to the transport mechanism for accessing s position. (4) k-human-process [0014] observing the basic miscellaneous towel, the single or single-piece transport unit of the transport mechanism to the substrate processing of the batch processing unit (4) other batch processing units on the downstream side or The base L of the batch type conveying unit is conveyed continuously and efficiently. [0015] For the 3_ shouting reduction device, there is included: a subtraction part, a mother-to-person substrate that is injected into the tablet, each time for a given batch processing piece 201246435 • ί desired batch processing; For a plurality of wafer boats, the batch is placed in the ϊϊΐίϊϋ® boat, and the substrate before the batch processing is to be received in each order; TM ^ 5 ^ until the wafer is formed:: ί after the batch is processed The substrate and the batch processing unit are disposed at the position of the transport mechanism at the position of the transport mechanism, and the transport mechanism can access the transport mechanism to the wafer transporter. The sub-processing unit shifts [0016], and the batch processing unit or the batch type in the above-mentioned configuration is such that the batch-type sub-processing unit on the upstream side goes to the downstream side and is transported from the batch. Integrated, continuous and efficient or early-type transfer unit substrate [0017] The route theory contains: the first and second transport in the first "normal transport road = on the first transport route, in the first 2 Transfer route: 2:: _ brother 2 fci line other end (four) m - position, and the second transport path 1 transport : To the first «substrate transport! Or the same ^2^=== in the second process. 15, arranged at the other end of the first line, the first discharge position is provided between the first row and the row U, and the first transport path has a secondary load. The base of the predetermined number is 'the second transport shuttle, and the other end of the line is provided with the second and second war positions, and the first structure is set to be movable with the third and second movements; the first transporter ϊϊ, One or a plurality of substrates of the transport substrate; the first one is used to transport the substrate in the first one. The pick-up is provided for transporting the heart at the base of the second transport route. At least one of the second regions is configured to apply a desired single-piece process or batch process to the substrate, and the first transport mechanism uses the first transfer arm to mount the first transfer arm at the first and second loading positions The predetermined number of substrates are loaded into the i-th and second transport shuttles. 2 The transport mechanism uses the second transport arm, and is removed from the first and second transport shuttles at the second and second discharge positions. And the substrate of the predetermined number of sheets; and independently performing: the operation of transporting the substrate from the second loading position to the first discharge position by the first transport shuttle, and the second transport shuttle The substrate is transported from the second loading position to the discharge position. [0018] In the substrate processing apparatus according to the fourth aspect, the shuttle tray is independently moved from the first loading position to the first (fourth) position as described above. The operation of transporting a single piece or a single piece, and the operation of transporting the substrate from the second position to the second discharge position by the second transfer shuttle in a single piece or in a batch. [_] The force 1 transport mechanism is only in the first or Any one of the second transport shuttles stays on the ί\2 ί load position during the loading of one substrate or a whole batch of multiple sheets, and the configuration is as long as any of the first or second transport shuttles. = Matching = 1, 2 The transfer shuttle is fixed and cares about the transmission or transmission of the transport mechanism on the other side. There is no need to [0020] The route contains the first and second transports. The second phase of μ of the predetermined number of sheets; the line loading position, the number of the predetermined number of sheets to be transported to the first transport path, and the movement; the second transport shuttle, the other end of the transport route is provided with the second The loading position, the second and the second unloading position are moved back and forth; No. 201246435 • Carrier Provided to be accessible to the first and second loading positions, and having one or a plurality of first transport arms for transporting the substrate in the first region; and the second transporting structure, a is further settable ???said first and second discharge positions are picked up, and one or a plurality of second transfer arms for transporting the substrate in the second region; and a processing portion disposed in the first and second regions At least one of which is used to apply a desired single-piece processing or batch processing to the substrate; and the third transporting means uses the third transporting arm, and the predetermined number of substrates are at the first and second loading positions Loading the second and second transport shuttles, the second transport mechanism using the second transport arm, and removing the predetermined number of sheets from the first and second transport shuttles at the first and second discharge positions And the substrate is alternately carried out. The first transport shuttle transports the substrate from the second loading position to the i-th discharge position, and the substrate is transported from the second loading position by the second transport shuttle. § Hai's second unloading position action. [0021] In the substrate processing apparatus according to the fifth aspect, the parent is replaced by a predetermined production time as described above: the substrate is transferred from the second loading position to the first processing position by the i-th handling shuttle. The recording and relocation operation and the transfer of the substrate from the 2nd loading position to the second unloading position by the second transport shuttle are carried out in a single piece or in a batch. [0022] ί 5 The transport mechanism is provided in the first and second transport shuttles. After the production time interval: one substrate or one load substrate can be loaded during the first and second loading positions. In the second transport mechanism, the first and second transports may be alternately placed in the second and second discharge positions of the second and second discharge positions, or the plurality of substrates may be unloaded in a batch. Each of the transport mechanisms can directly transfer or transport the substrate as long as the transport shuttle is fixed and periodically reciprocating, and there is no need to care about the operation or condition of the transport mechanism on the other side. [0023] The substrate processing apparatus according to the sixth aspect includes a transport line that is transported horizontally, and a handle that is transported from the upstream side to the downstream side of the processing flow, and the first transport (four)' § on the miscellaneous line. The processing unit performs substrate transfer every time the mosquitoes are placed in the same order as the 201246435 first single sheet, and the second transport mechanism is disposed on the transport line from the first transport mechanism to the downstream side, and the predetermined number of sheets is set each time. The substrate transfer is performed by the two single-piece processing units disposed in the vicinity of the ground, and the first and second transfer shuttles are reciprocally movable, and one section of the transfer line is formed, and the substrate is connected to the predetermined number of sheets. The first and second loading positions adjacent to the first transport mechanism are loaded at the first and second discharge positions of the second transport mechanism and are individually transported. [0024] In the substrate processing skirt of the sixth aspect of the present invention, it is possible to independently enter the ^, the shuttle board from the third position to the first
Pj置加以早片或批次搬運的動作。因此,第1搬運機; 批載入複數絲板即可。第2搬運機構則口ί '第1或第2搬運梭之任一者停留在第】或第2卸料位置 , di ίίί ΐ整批卸下複數片基板即可。各搬_構只要‘ Ϊ的傳遞或傳送即可,並無須在意對方側之搬運機== [發明之效果] 【0025】 單片處理裝置,利用如上述的構成及作用,可於 片式處理μ之^ ,於各單 的效率而提高處理量。 又置之間也此改善基板搬運 【實施方式】 【0027】 說明本發明之適合的實施形態 以下參照附加圖式 201246435 【0028】 圖1係顯不本發明之一實施形態的基板處理裝置之系統構 成。該基板處理裝置係於具有例如圖23所示剖面構造之染料敏化 太陽能電池的製造過程中,使用於在線上製作出與對向電極 貼合前之透明基板侧的疊層組件之步驟。 【0029】 該染料敏化太陽能電池就基本構成而言,係於透明電極 極)300與對向電極(陽極)302之間夾入有載持敏化染料之多二 半導體微粒子層(工作電極)304與電解質層3〇6。在此,髀 粒子層=04係與透明電極300、電界質層3〇6及對向電極3〇2二同 分割成單元單位,且隔著透明電極300而形成於透明基板3〇8上。 ^對向電極302隔著基電極305而形成於對向基板31〇上。夂 單兀之透明電極300係與相鄰的對向電極3〇2電性連 σ 巧上’多數的單tL係電性直列連接或並列連接。圖示之類型中、’, ,透明電極上形财與各辨導雜粒子 辨;且與曰其平行延伸之集電用的格子狀配線312,且在正對面 電極(陽;^亟)302側也形成有同樣的格子狀配線314。而且夂^ 狀配線312、314分別被覆有保護用的絕緣膜316、 。 ° 【0030】 於此種構成的染料敏化太陽能電池中,當從透明基板3〇 見光時’半導體微粒子層304所載持的染料會被激^ 日㈣f電子。所放出的電子經由半導體微粒子層3G4被導引至 明電極300,並送出至外部。所送出 g j 粒子層3ΰ4内的染料接收,如此將光能量即時轉 【0031】 安^該If,的基板處理裝置,將形成有透明電極300被圄 基板G加以投入。然後,在線上對於各個基板G,依序進 13 201246435 電極300之圖案化、半導體微粒子層3〇4 成膜、半導體微粒子層304之假燒、及對半酉己f之 染料吸附的-連串主製程、斑附隨 -錄子層304之 理、熱處簡。梅,軸===== 明基板308側的#層組件(難_〇4 月^透 308,疊層組件往執行下一步驟之基= = 為已處理的基板G。又,此麻土攸处I衮罝私出,作 形或矩形形狀者。 心形態中之基板⑽作成具有四角 [裝置整體之構成] 【0032】 處理中且口 機Π及卸載機14。,、邊方向(Χ方向)的兩端部連結有裝載 【0033】 表載機12係以晶圓匣盒為單位,而將夫卢 自走式搬運車搬入的褒載埠,且其包含:、晶二從例如 統寬度方向(Υ方向)並列而載置複數曰曰f 口 _ 2 山甘攸0茨十台16上的任一個晶圓I?各Γ说 體18a上進退或伸縮務# j上移動的本體18a、及可於該本 板轉送台20,雜接⑽,且能透過固定式的基 【0034】、接狀處MG#進行基板㈣授受。 所有里11^為0單位而將已於該基板處理褒置結束 遠,日人已處理的基板G在例如自走式搬運車移出的知恭 而載θ22α/1系統寬度方向(Y方向)並列 理的基板G以水平1 :固益C係將複數片(25片)已處 水千安勢縱向堆豐而固持;及卸載機搬運機構24, 14 201246435 將已處理的基板(3逐片往該 又,卸载機搬運機構24 JL有在γ 7 A、壬個晶圓匣盒C收納。 及可於該本體24a上進退'或私、θ,f轴上移動的本體24a、 固定式的基板轉送台26,而盥接搬運臂屬,且能透過 授受。 /、卩之處理站10側進行基板G的 【0035】 12 Η 塊10C所構成。 平乃/枇夂k載區塊10B及單片集中區 【0036】 在與裝載機12接鄰之上游側的置 台或複數台的單片式清洗單元中區塊,配備有i 化單元34。各單片式清洗單元32具有用圖案 逐片清洗的裝置構成,而各單片式將,G之待處理面 來將基板g之待處理面上的_導m4触置構成係用 成透明電極300。 、電層加以逐片進行圖案化而形 【0037】 在中間的單>{/批次混載區塊聰, 片式工作電極成膜單元36、i A ^有1。或復數台的單 膜單元38、批次式熱處理裝置;^的单片式格子狀配線成 工作電極成膜單元36 假燒褒置42。單片式 基板G之待處理面上逐片成膜#成半^==塗佈,以在 單片式格子狀配線成膜單元38 作電極)3〇4。 佈,以在基板G之待處理面上逐片义重最藉由例如印刷塗 保護膜316。批次式熱處理裝置4〇的^大配線犯及 塗佈)後之基板G的待處理面以每將成膜(印刷 ⑽片)方式進行烘烤。又,批次式假次處理片數(例如 ,後之基板G的待處理面㈣^ 【0038】 201246435 #载機14接鄰之下游側的單片集中區塊10C,配備有複 μ I後ί 1式染料吸附單元44。各單片式染料吸附單元44的裝置 質半導體微〇之待處理面所形成有的多孔 【0039] 士上理站1〇内,設有縱貫或巡迴於各區塊1〇A、10B、10C 中,用來依處理程順序進行基板α的搬運。 舰則的單片集中區塊10Α内’基板轉送台20、單片搬運 機ί及Γ片搬運梭搬送部50沿著系統長邊方向(X方向)配置成 二搬運線46的一個區間,且在單片搬運機構48的左 Hi單片式清洗單元32及單片式圖s化單元34。 -H係顯示單片/批次混載區塊腦内的詳細配置。如圖所 混載區塊_,導入有來自上游側之單片集中區 i靜t早片運梭搬送部50。而且,於單片搬運梭搬送部50 ί既定之位置分別配置有單片搬運機構52、基板轉送台 其杯Ϊ片56、單片搬運梭搬送部58、單片搬運機構60、 、單職次搬運機構64、批次搬運梭搬送部66、 批-人搬運_ 68、批次搬運梭搬送部7〇、批次 及單片 =_部74,_ 構 、在tb:單片搬運機構52可與其周圍所配置之各單片式工作雷 極成膜單兀36、單片搬運梭搬送部50(卸料位置)及基板 Μ ϊΓί 般ff構56可與其相鄰之批次式口熱處 _、80C中的任二者、_轉送台54及單片 =^二 載位置)進行接取。 綠以58(4 【0043】 單片搬運機構60可與其周圍所配置之各單片式格子狀配線成 16 201246435 • 元%、單片搬運梭搬送部58(卸料位置)及基板轉送a 62、隹- g。曰機構64可與其相鄰之批次式熱處理部= 厂0舟載置σ 82、84上所載置第2晶圓舟88d、_ 位置)者、基板轉送台62及批次搬運梭搬送部66(袋載 【0044】 ▲ 搬運機構68可與批:试織I置42所設有之第3曰曰圓 96載98 ^第?日上^ 3晶圓舟9仏、働、第4晶圓舟載^台 付番、;ίί日日圓舟1〇〇Α、1〇〇Β、批次搬運梭搬送部66(卸料 ,位置)及批:人搬運梭搬送部7〇(褒載位置)進行接取。 【0045】 曰圓運機構72可與滅伽a裝置42所設有之第5 : ιό4,第5晶圓舟舰、_、第6晶圓 -上的第6晶圓舟112A、112B、批次搬運梭搬 【οοΐΓ及單片搬運梭搬送部74(裝齡置)進行接取。 f+fr欠式熱5理裝置40包含有1台縱型批次熱處理爐114,在 二:貝配置有第1及第2晶圓舟移送機116、U8,且在第1晶圓 機m的周圍配置有3個第1晶圓舟載置台75、76、78, 晶圓舟移送機118的周圍配置有3個第2晶圓舟載置台82、 〇4 ' 86 ° 【0047】 此1晶圓舟載置台75、76、78巾,晶圓舟載置台75、 △使用於處理前之基板G與處理後之基板G的改裝,晶圓舟載置 口 78用來對於剛接受熱處理的基板G進行冷卻。又,第2晶圓舟 82、84、86中,晶圓舟載置台84使用於處理前之基板G 處理後之基板G的改裝,晶圓舟載置台82用來供已裝入有批次 处,片數之處理前基板G的晶圓舟進行待機,而晶圓舟載置台86 用來對於剛接受熱處理的基板G進行冷卻。 【0048】 201246435 t如後面詳細說明,批次式熱處理裝置40利用第1晶圓舟移載 機116,依序地對於3個第1晶圓舟80Λ、80B、80C反複進行下 述動作:動作1,將其中兩個晶圓舟載置於可從單片搬運機構% 進行接取之改裝用的晶圓舟载置台76、75上,以進行處理後之基 板〇的取出、及處理前之基板G的裝入;與動作2,將其餘的i 個晶圓舟放入縱型批次熱處理爐114中以進行熱處理,或將 的1個晶®舟載置於冷卻_晶圓舟載置台78上, ^、 熱處理後的冷卻。 丁】凡成 【0049】 π ^二 式熱處理裝置40利用第2晶圓舟移載機U8, 依序地對於3個第2晶圓舟88D、88Ε、88F反複進行下述動作: =1 ’將其中1個晶圓舟載置於可從單片/批次搬運機構64進行 ,取3裝用的晶圓舟載置台84上,以進行處理後之基^ $ 理!!之基板G的裝人;動作2 ’將已結束裳人批次處理 舟載詈基板G的另1個晶圓舟’加以載置於待機用的晶圓 114中^動^ 3 ’將其餘的1個晶圓舟放入縱型批次爐 舟載詈處或將其餘的1個晶圓舟載置於冷卻用的晶圓 舟載置σ 86上,以進行剛完成熱處理後的冷 【0050】 ⑽、=有複數台例如4台的縱型批次假燒爐 dr 3舟 2之間配置有第3晶圓舟移載機128,Pj is placed in the early film or batch handling action. Therefore, the first conveyor; the batch can be loaded with a plurality of wires. In the second transport mechanism, either the first or second transport shuttle is in the second or second unloading position, and the plurality of substrates can be removed in batches. It is only necessary to pay attention to the transfer or transfer of the Ϊ, and it is not necessary to care about the other side of the transporter == [Effect of the invention] [0025] The single-chip processing apparatus can be processed by the chip by the above-described configuration and action μ^^, the throughput is increased by the efficiency of each sheet. [Embodiment] Embodiments of the present invention will be described with reference to the additional drawings 201246435. [0028] FIG. 1 is a system of a substrate processing apparatus according to an embodiment of the present invention. Composition. This substrate processing apparatus is a step of producing a laminate assembly on the transparent substrate side before bonding to the counter electrode on the line in the manufacturing process of the dye-sensitized solar cell having the cross-sectional structure shown in Fig. 23, for example. [0029] The dye-sensitized solar cell has a basic configuration in which a plurality of semiconductor fine particle layers (working electrodes) carrying a sensitizing dye are sandwiched between a transparent electrode electrode 300 and a counter electrode (anode) 302. 304 and electrolyte layer 3〇6. Here, the 粒子 particle layer =04 is divided into a unit unit by the transparent electrode 300, the electric boundary layer 3〇6, and the counter electrode 3〇2, and is formed on the transparent substrate 3〇8 via the transparent electrode 300. The counter electrode 302 is formed on the counter substrate 31A via the base electrode 305. The single transparent electrode 300 is electrically connected to the adjacent counter electrode 3〇2, and is connected to a plurality of single tL series in-line or in parallel. In the type shown, ',, the transparent electrode is shaped and the individual particles are discriminated; and the grid-like wiring 312 for collecting electricity is extended in parallel with the crucible, and the opposite electrode (positive; ^) 302 The same lattice-like wiring 314 is also formed on the side. Further, the 配线-shaped wirings 312 and 314 are respectively covered with a protective insulating film 316. [0030] In the dye-sensitized solar cell of such a configuration, when the light is seen from the transparent substrate 3, the dye held by the semiconductor fine particle layer 304 is excited by (f) electrons. The emitted electrons are guided to the bright electrode 300 via the semiconductor fine particle layer 3G4, and are sent out to the outside. The dye received in the g j particle layer 3ΰ4 is received, and the light energy is instantaneously transferred. [0031] The substrate processing apparatus of the If, the transparent electrode 300 is formed by the substrate G. Then, on the line for each substrate G, 13 201246435 electrode 300 patterning, semiconductor fine particle layer 3〇4 film formation, semiconductor fine particle layer 304 quenching, and dye adsorption to the semiconductor layer The main process, the plaque accompanying-recording layer 304, the heat and simplicity. Mei, axis ===== #层组件 on the side of the substrate 308 (difficult _ 〇 月 ^ 透 308, the laminated component to the base of the next step = = is the processed substrate G. Again, this ramie The substrate (10) in the heart shape is formed to have four corners [constitution of the device as a whole] [0032] In the process of processing, the machine and the unloader 14 are in the side direction (Χ) Mounting at both ends of the direction) [0033] The surface carrier 12 is a stacker that carries the Fulu self-propelled van in units of wafer cassettes, and includes: In the width direction (Υ direction), a plurality of wafers I are placed in parallel with each other, and the body 18a is moved on the body 18a. And the board transfer table 20 can be miscellaneously connected (10), and the substrate (4) can be transmitted and received through the fixed base [0034] and the joint MG#. All 11^ are 0 units and will be processed on the substrate. When the mounting is completed, the substrate G that the Japanese person has processed is, for example, removed from the self-propelled transport vehicle, and the substrate G that is arranged in the width direction (Y direction) of the θ22α/1 system is Level 1: The solid-core C system will hold a plurality of pieces (25 pieces) in the longitudinal direction of the water and maintain the water; and the unloading machine handling mechanism 24, 14 201246435 will process the substrate (3 pieces by piece, the unloader The transport mechanism 24 JL is housed in γ 7 A, one wafer cassette C, and a main body 24a that can move forward and backward on the main body 24a or move on the private, θ, f-axis, and a fixed substrate transfer table 26, and盥 搬运 搬运 搬运 搬运 搬运 搬运 搬运 搬运 搬运 搬运 搬运 搬运 处理 处理 处理 处理 处理 处理 处理 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 The block in the upstream side of the loader 12 or the plurality of single-chip cleaning units is provided with an i-unit 34. Each of the single-chip cleaning units 32 has a device for cleaning one by one by pattern. And each monolithic type, the surface to be processed of G, touches the surface of the substrate g to be processed into a transparent electrode 300. The electric layer is patterned and sliced one by one [0037] The middle single > { / batch mixed block Cong, the chip working electrode film forming unit 36, i A ^ has 1. or a plurality of single The monolithic grid-like wiring of the membrane unit 38 and the batch type heat treatment device is formed into a working electrode film forming unit 36 and a dummy burning device 42. The surface of the monolithic substrate G to be processed is formed into a film one by one. = coating to apply the film forming unit 38 as a single electrode in the monolithic grid-like wiring. 3 〇 4. The cloth is applied to the surface to be treated of the substrate G, and the protective film 316 is applied by, for example, printing. The surface to be treated of the substrate G after the large-scale wiring of the heat treatment apparatus 4 is coated and baked (printed (10) sheets). In addition, the number of batches of the dummy processing (for example, the surface to be processed of the substrate G (4) afterwards] [0038] 201246435 #1014, the single-chip concentrated block 10C on the downstream side of the carrier 14 is equipped with a complex μ I ί 1 type dye adsorption unit 44. Each of the monolithic dye adsorption units 44 has a porous surface formed by the surface of the semiconductor semiconductor to be processed, and is provided with a longitudinal or a tour. In the blocks 1A, 10B, and 10C, the substrate α is transported in the order of processing. The ship's single-chip concentrated block 10Α's substrate transfer table 20, single-chip transporter, and cymbal transport shuttle transport The portion 50 is disposed in one section of the two conveyance lines 46 along the longitudinal direction of the system (X direction), and is in the left Hi single-chip cleaning unit 32 and the one-chip pattern sing unit 34 of the single-piece conveyance mechanism 48. -H The detailed configuration in the brain of the single-chip/batch mixed block is displayed. As shown in the mixed block _, the single-chip concentrated area from the upstream side is introduced, i static t early shuttle transport unit 50. The transport shuttle transport unit 50 ί is provided with a single-piece transport mechanism 52, a substrate transfer table, a cup piece 56, and a single-piece transport at a predetermined position. The shuttle transport unit 58, the single-piece transport mechanism 60, the single-subsidiary transport mechanism 64, the batch transport shuttle transport unit 66, the batch-to-person transport _ 68, the batch transport shuttle transport unit 7〇, the lot, and the single chip = _ part 74, _ structure, tb: single-chip operation lightning-pole film forming unit 36 disposed around the single-piece conveying mechanism 52, single-piece conveying shuttle conveying unit 50 (discharging position) and substrate Μ ϊΓ ϊΓ The ff structure 56 can be accessed from any of its adjacent batch-type hot mouths _, 80C, _ transfer station 54, and single-chip = ^ two-load position. Green is 58 (4 [0043] The single-piece transport mechanism 60 can be formed in a single-piece grid-like wiring arranged around it. 16 201246435 • Element %, single-piece transport shuttle transport unit 58 (discharge position) and substrate transfer a 62 , 隹-g. 曰 mechanism 64 can be adjacent to the batch type heat treatment unit = factory 0 boat placement σ 82, 84 placed on the second wafer boat 88d, _ position), substrate transfer station 62 and batch The secondary shuttle shuttle unit 66 (bag loading [0044] ▲ transport mechanism 68 and batch: trial weaving I set 42 is the third round 96 96 98 ^ day on the 3 wafer boat 9 仏,働, the fourth wafer boat is loaded with the Taiwanese; the ίί日日舟1〇〇Α, 1〇〇Β, the batch handling shuttle transport unit 66 (unloading, position) and the batch: the person transporting the shuttle transport unit 7 〇(褒载位置) is taken in. [0045] 曰The rounding mechanism 72 can be combined with the gamma-a device 42 on the 5th: ιό4, 5th wafer boat, _, 6th wafer- The sixth wafer boat 112A, 112B, the batch transport shuttle [Ou ΐΓ and the single-piece transport shuttle transport unit 74 (aged) are accessed. The f+fr underheat thermal device 40 includes one vertical batch. The secondary heat treatment furnace 114 has the first and second in the second: The boat transfer machines 116 and U8 are disposed with three first wafer boat mounting tables 75, 76, and 78 around the first wafer machine m, and three second crystals are disposed around the wafer boat transfer machine 118. The boat mounting table 82, 〇4 '86 ° [0047] The 1 wafer boat mounting table 75, 76, 78, the wafer boat mounting table 75, Δ used for the substrate G before processing and the processed substrate G The wafer boat loading port 78 is used to cool the substrate G that has just been subjected to heat treatment. Further, in the second wafer boat 82, 84, 86, the wafer boat mounting table 84 is used after the substrate G before processing. In the modification of the substrate G, the wafer boat mounting table 82 is used for standby of the wafer boat in which the pre-process substrate G has been loaded in the batch, and the wafer boat mounting table 86 is used for the heat treatment just received. The substrate G is cooled. [0048] As described in detail later, the batch type heat treatment apparatus 40 sequentially repeats the first wafer boat 80, 80B, 80C by the first wafer boat transfer machine 116. Perform the following actions: Action 1, placing two of the wafer boats on the modified crystals that can be picked up from the single-piece transport mechanism % On the boat mounting tables 76 and 75, the substrate 〇 after the processing is taken out and the substrate G before the processing is loaded; and in the operation 2, the remaining i wafer boats are placed in the vertical batch heat treatment furnace 114. The heat treatment is performed, or one crystal® boat is placed on the cooling_wafer boat mounting table 78, and the heat is cooled after the heat treatment. Ding] Fancheng [0049] π ^ two-type heat treatment device 40 utilizes the second crystal The boat transfer machine U8 repeats the following operations for the three second wafer boats 88D, 88Ε, and 88F in sequence: =1 'Place one of the wafer boats in a single piece/batch The mechanism 64 performs the processing on the wafer boat mounting table 84 for processing. The mounting of the substrate G is carried out; the operation 2 'the other wafer boat that has finished the batch processing of the boat carrying the substrate G is placed in the wafer 114 for standby ^ 3 ' One of the wafer boats is placed in the vertical batch furnace boat or the remaining one wafer boat is placed on the wafer boat mounting σ 86 for cooling to perform the cold after the heat treatment is completed. 0050] (10), = a plurality of vertical stacks, for example, four vertical batches, a third wafer boat transfer machine 128,
^多載機130,第3假燒爐124與第5晶圓舟載L^Multi-carrier 130, the third squirrel 124 and the fifth wafer carrier L
St第η5/圓舟移載機132,第4假燒爐126與口第6晶圓舟載 曰〇之間配置有第6晶圓舟移載機134。又,第3〜第6 72#liS^ ' Γ〇〇5ί】後基板與處财之基板G的改裝。 201246435 如後面詳細說明,也乂上 • ⑶,依序歧替地勒^燒裝£42咖第3晶圓舟移載機 動作:動作1,將其令曰第3晶圓舟94A、94B反複進行下述 者移至第1假燒爐12〇。、二圓舟從晶圓舟載置台90、92中任一 晶圓舟從第1煆燒掉120 理;及動作2,將其中另一個 進行處理後之基板G的取^ j舟、92中任一者,以 【0052】 J取出、及處理前之基板G的裝入。 依序ί交G對裝置42利用第4晶圓舟移載機130, 作:動作1,將ι'Γ-/晶圓舟1〇〇Α、100Β反複進行下述動 ^ 進行浪燒處理;及動作2,將其中另一個Ϊ -卢…么爐122移往晶圓舟載置台96、98中任一者,以進 订的取出、及處理前之基板G的裝入。進 六巷次巧燒裝置42利用第5晶圓舟移載機132,依序或 =匕兩個第5晶圓舟驗、應B ㈡ ΐ 一個晶圓舟從晶圓舟載置台搬、綱中任 弟^:U盧124以進行假燒處理;及動作 ,第;3假燒爐124移往晶圓舟載置台⑽、⑽中任1者個=舟 處理後之基板G的取出、及處理前之基板G 丁 【0054】 且’批次式假燒裂置42利用第6晶®舟移載機134,依岸 •^^兩個第6晶圓舟112A、㈣反複進行下述動作:動^序 將其中一個晶圓舟從晶圓舟載置台1〇8、110中任-者移至第4‘ W進行燒處理;及動作2,將其中另一個 第= 之基板G的取出、及處理前之基板G的裝入。 便 【0055】 再次麥照圖1,於下游側的單片集中區塊1〇c内,從 • 次混載區塊10B所導入的單片搬運梭搬送部74、單片搬運機構13$ 19 201246435 及基板轉送台26沿著系統長邊方向(X方向)配置成一列,而構成 搬運線46的—個區間(最終區間),且在單片搬運機構136的左右 兩側配置有複數台的單片式染料吸附單元44。 [全部處理步驟之順序] 【0056】 ,在此,將在該基板處理裝置對1片基板仏進行之全部處理或 搬運步驟的順序加以說明。 【0057】 首先,於裝載機12,裝載機搬運機構18從平台16上的任一 抽出1片基板Gn,並將該抽出的基板Gn載置於基 【0058】 、α然後i單片搬運機構48從基板轉送台20取下基板Gn,並加 以,入至單片式清洗單元32。此時’於基板搬人至該單片式清 f單元32之前,級該單元32搬出剛完成清洗處理之另外的^ [0059】 透明清。洗Λ元主32,對於基板Gn的待處理面(覆蓋層的 二===理。藉由該清洗處理’以從編 【0060】 片1 述t單片式清洗處理結束時,單片搬運機構48從該單 m4 _彳完成圖案彳_之 «^士 ί該單片式圖案化單元34 ’以例如雷射餘刻法歸4 Ο 單蓋^透明導電層)施加單片式圖案化處理 tiioo*4ίΐ*The sixth wafer boat transfer machine 134 is disposed between the fourth n5/boat transfer machine 132, the fourth fire floor 126, and the sixth wafer boat. In addition, the third to the sixth 72#liS^ 'Γ〇〇5ί] the rear substrate and the financial substrate G modified. 201246435 As explained in detail later, also on the top (3), in order to replace the squid ^ burned the £42 coffee third wafer boat transfer machine action: action 1, the third wafer boat 94A, 94B repeated The following was moved to the first simmering furnace 12 〇. The two boats are burned from the first stack of the wafer boat mounts 90, 92 from the first stack; and the action 2, the other one is processed, the substrate G is taken from the boat, 92 Either one of them is taken out in [0052] J and loaded in the substrate G before processing. In sequence, the G pair device 42 uses the fourth wafer boat transfer machine 130 to perform the operation 1, and the ι'Γ-/wafer boat 1〇〇Α, 100Β is repeatedly subjected to the following operations to perform the wave burning process; And in the action 2, the other one of the slabs 122 is moved to the wafer boat mounting table 96, 98 to perform the unloading and the loading of the substrate G before the processing. The sixth lane secondary burning device 42 uses the fifth wafer boat transfer machine 132, sequentially or = two second wafers, and the B (two) ΐ one wafer boat is moved from the wafer boat mounting platform. The younger brother ^: U Lu 124 to perform the smoldering treatment; and the action, the third; the smoldering furnace 124 is moved to the wafer boat mounting table (10), (10), one of the ones = the substrate G after the boat is taken out, and The substrate G before processing [0054] and the "batch-type pseudo-sintering device 42" uses the sixth crystal|boat transfer machine 134, and the second and sixth wafer boats 112A and (4) repeatedly perform the following operations. : moving the one of the wafer boats from the wafer boat mounting table 1 to 8, 110 to the 4' W for firing; and the action 2, removing the other substrate 1 And the loading of the substrate G before the processing. [0055] In the monolithic concentrated block 1〇c on the downstream side, the single-piece transport shuttle transport unit 74 and the single-piece transport mechanism introduced from the secondary mixed block 10B are 13# 19 201246435 The substrate transfer table 26 is arranged in a row along the longitudinal direction of the system (X direction) to form a section (final section) of the transport line 46, and a plurality of sheets are arranged on the left and right sides of the single-piece transport mechanism 136. A sheet dye adsorption unit 44. [Sequence of all processing steps] [0056] Here, the sequence of all processing or transporting steps performed by the substrate processing apparatus on one substrate will be described. First, in the loader 12, the loader transport mechanism 18 extracts one substrate Gn from any of the platforms 16, and places the extracted substrate Gn on the base [0058], α and then the monolithic transport mechanism. The substrate Gn is removed from the substrate transfer table 20 and fed into the one-chip cleaning unit 32. At this time, before the substrate is transferred to the one-piece cleaning unit 32, the unit 32 carries out the other clear cleaning that has just completed the cleaning process. Washing the main unit 32, for the surface to be processed of the substrate Gn (two === of the cover layer. By the cleaning process), from the end of the single-chip cleaning process of the film [0060], the single-chip handling The mechanism 48 applies a one-piece patterning process from the single m4 _ 彳 completion pattern 之 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Tiioo*4ίΐ*
20 201246435 【0062】 或銦錫f明電極300係由例如摻氟之Sn〇2(FTO) 由例如石英、破璃蓉。又,基板G的母材即透明基板308係 等之透明塑勝材明無機材料、或聚脂、丙烯、聚酸亞胺 【0063】 單片案化處理結束時,單片搬運機構48從該 5〇。單片搬搬出该基板Gn’並載入至單片搬運梭搬送部 ^料般运部5G將所載入的基板仏從裝載位置搬運至! 【0064】 運機^2板將 搬運梭f送部5G的卸料位置時,單片搬 星开% ^ ±土 _ 11 Ρ下,並搬入至任一台單片式工作電極成膜 36之前,先ί·亥ί樣^基板仏搬入至該單片式工作電極成膜單元 成膜處理之另;ni板出剛完成工作電極(半導體微粒子層)綱 【0065】 r 片式工作電極細單元36,以例如網版印刷法對於基板 粒二二王’以在基板〇"之待處理面形成已圖案化的半導體微 耸夕又傾〆。又’半導體微粒子層304係由例如Ti〇2、Zn0、Sn02 4之金屬氧化物所構成。 ^nU2 【0066】 52從當的ϋ式工作f極成膜處理結束時,單片搬運機構 Li Γ式乍電極成膜單元36 1 般出該基板Gn,並移載到基 取54。隨後,對面侧的單㈣運機構52從基板轉送台54 5下^反Gn,並將已取下的基板Gn裝入至接鄰之晶圓 =、7』6上所載置第!晶圓舟8〇A、_、就中的任一者。於此 计成將基板Gn裝入至晶圓舟載置台75上的晶圓舟。 【0067】 201246435 當已裝入至晶圓舟80A之基板(其中也包含基板Gn)的片數達 到批次處理片數(1〇〇片)時,利用第〗晶圓舟移載機116將該晶圓 舟8M從晶圓舟載置台75上移往縱型批次熱處理爐114的旁邊, 接著放入熱處理爐114巾。然後,當㈣—定之熱處理時間時, 將晶圓舟8GA取出至熱處理爐m外,並湘晶圓舟移載機— 加以移至冷卻用的晶圓舟載置台上,如此使得晶圓舟嫩所固 持的基板011與其他基板一起於大氣空間下冷卻一定時間。其後, 晶圓舟移載機116將晶圓舟從晶圓舟載置台78移至改裝、用的 晶圓舟載置台76。 【0068】 如此一來,單片搬運機構56以既定之順 76上的晶圓舟抽出基板仏,並將抽出的基板仏片口 運職部58賴碌板賴 【0069】 運』t板蔣 =達Λ片搬運梭搬送部58的卸料位置時,單片搬 it r下,並搬人至任—台單以格子狀配線成 單元38之前中同基板^搬入至該單片式格子狀配線成膜 ;316成膜處理之另外^基板 0 ' ' = 【0070】 板/的子狀=細單元38 ’關如網版_法對於基 ^ 物成格子狀配 確而言為格子狀配線層二理面(精 312係由例如Ag#之電阻率低的 j 二:狀配線層 如UV(紫外線)硬化樹脂等之絕緣體戶;構成保韻316由例 【0071】 22 201246435 .構60^亥上單^3夂片=格子f配線成膜處理結束時,單片搬運機 到基板轉送Λΐίί配線成膜單元38搬出該基板&,並移載 轉送台62取口下额^後面側的單片/批次搬運機構64從基板 用晶圓舟載置/84上;裝人至接鄰之改裝 一者。於此例中,二 8E、88F中的任 【0072】 °又计成將基板仏裝入至晶圓舟88E。 ^ΐ入至晶圓舟88Ε之基板G(其中也包含基板G )的Η叙 :^^^至待機用的晶圓舟載置台82,接著於既定之: '' 处里爐114。然後,當於熱處理爐1Η中結束一定時 film 88E ^ ^ 118加以移至冷卻用的晶圓舟載置台%上,如此曰鬥20 201246435 [0062] The indium tin oxide electrode 300 is made of, for example, fluorine-doped Sn〇2 (FTO) from, for example, quartz or glazed rice. Moreover, the transparent plastic material such as the transparent substrate 308 of the base material G, or the like, or the polyester, acryl, or polyimine [0063], when the single-piece processing is completed, the single-piece conveying mechanism 48 5〇. The substrate Gn' is carried out in a single piece and loaded into the single-piece transport shuttle transport unit. The transport unit 5G transports the loaded substrate 仏 from the loading position to the loading position. [0064] The transport unit 2 sends the transport shuttle f At the unloading position of the 5G part, the single piece is moved to % ^ ± _ 11 Ρ and moved into any one of the single-chip working electrode film formation 36, before the substrate is moved into the The monolithic working electrode film forming unit is formed by a film forming process; the ni plate is just completed with the working electrode (semiconductor particle layer) [0065] r chip working electrode thin unit 36, for example, screen printing method for the substrate grain 22 Wang's formation of patterned semiconductors on the surface of the substrate quot" Further, the semiconductor fine particle layer 304 is made of, for example, a metal oxide of Ti〇2, Zn0, and Sn02. ^nU2 [0066] 52 From the end of the ϋ-type working f-electrode film forming process, the monolithic transport mechanism Li Γ type 乍 electrode forming unit 36 1 out of the substrate Gn and transferred to the substrate 54. Subsequently, the opposite side single (four) transport mechanism 52 is turned off from the substrate transfer table 54 5, and the removed substrate Gn is placed on the neighboring wafer =, 7" 6 placed on the first! The wafer boat is 8〇A, _, or any of them. Here, the wafer boat in which the substrate Gn is loaded onto the wafer boat mounting table 75 is calculated. [0067] 201246435 When the number of sheets of the substrate (including the substrate Gn) that has been loaded into the wafer boat 80A reaches the number of batch processing sheets (one wafer), the first wafer boat transfer machine 116 will be used. The wafer boat 8M is moved from the wafer boat mounting table 75 to the side of the vertical batch heat treatment furnace 114, and then placed in a heat treatment furnace 114. Then, when the heat treatment time is determined, the wafer boat 8GA is taken out to the heat treatment furnace m, and the wafer boat transfer machine is moved to the wafer boat mounting table for cooling, so that the wafer boat is tender. The held substrate 011 is cooled together with other substrates in the air space for a certain period of time. Thereafter, the wafer boat transfer machine 116 moves the wafer boat from the wafer boat mounting table 78 to the modified wafer boat mounting table 76. [0068] In this way, the single-chip transport mechanism 56 draws the substrate raft on the wafer boat on the predetermined cis 76, and transports the extracted substrate 口 口 运 职 职 【 【 【 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 When the unloading position of the shuttle conveyance portion 58 is reached, the single piece is moved to the bottom, and the transfer is carried out until the table is wired in the grid to form the unit 38, and the substrate is loaded into the single-piece grid-like wiring. Film formation; 316 film formation treatment ^ substrate 0 ' ' = [0070] plate / sub-shape = fine unit 38 'off the screen version _ method for the base material in a lattice shape is indeed a grid-like wiring layer The second surface (fine 312 is made of, for example, Ag#, which has a low resistivity, j: a wiring layer such as UV (ultraviolet) hardening resin, etc.; constitutes Bao Yun 316 by example [0071] 22 201246435 . When the order is completed, the film is processed, and the film transfer unit 38 carries out the substrate & and transfers the transfer table 62 to take the sheet on the back side. The sheet/batch handling mechanism 64 is placed on the wafer boat from the substrate/84; it is loaded into the neighboring one. In this example, the two 8E, 88F [0072] ° is also calculated to load the substrate into the wafer boat 88E. ^Into the wafer board 88 (including the substrate G) of the wafer boat: ^^^ to the crystal for standby The boat mounting table 82 is next to the predetermined: '' furnace 114. Then, when the heat treatment furnace 1 is finished, the film 88E ^ ^ 118 is moved to the wafer boat mounting table for cooling, so that Fight
Hi巧祕板Gn與其他基板—起於大氣空間下冷卻^時 :。ς後’晶圓舟移載機118將晶圓舟88E 至改裝用的晶圓舟載置台84。 圓廿戰1 口 86移 【0073】 如此來,單片/批次搬運機構64 紐嶋紐町帽舟 「ΐ ίΓ數片(例如10片),並將抽出的該等複數片(ι〇片)基板 兮般^部66。批她運梭搬送部66將所載入的 含基板Gn)從裝載位置加以細般運 【0074】 當包含基板Gn的複數片基板G到達批次搬運梭搬送部66的 卸料位置時’批次搬運機構68將鱗複數#基板G —次集中 下。然後,批次搬運機構68將所集中卸下的複數片基板G(其中也 包含基板Gn)分配到4台縱型批次煆燒爐12〇、122、124及126中 的任-者。於此例中,設計成第4假燒爐126為分配對象。 【0075】 23 201246435 姑Λ此情形’批次搬運機構68將包含基板Gn的該等複數片基 入的、至比次搬運梭搬送# 70。批次搬運梭搬送部70將所載 G從裝載位置加以整批搬運到卸料位置。批次/ H構72將包含基板Gn的該等複數片基板G從批次搬運 二掘Ϊ。曾卸下,並整批裳入至第6晶圓务載置台108、110上 Ξίίϊ Λ晶圓舟112Α'112β中的任—者。於此例卜設計成 if η與其他基板G 一起裝入至晶圓舟載置台110上的晶圓舟 【0076】 也’當已裝入至晶圓舟112B之基板G(其中也包含基 板Gn)的片數達到批次處理片數(勘片)時,利用第6晶圓舟移 將該晶圓舟112B移往第4瑕燒爐U6,如此使得基板Gn ”晶,舟112B上的其他基板—起接受暇燒處理。藉由該假燒處 理’可f基板Gn的待處理面上得到半導體微粒子層304的燒結 體。當該批次式煆燒處理結束時,將晶圓舟n2B取出至煆燒爐 126 ^卜々曰a圓舟112B上的基板Gn與其他基板一起於大氣空間 下冷部一定時間。其後’批次/單片搬運機構72於既定之時間點, 圓舟載置口 11〇上的晶圓舟進行接取,並依既定之順 序,以1片為單位而從晶圓舟112B抽取出基板Gn,再將所抽取 的基板Gn載入至單片搬運梭搬送部74。單片搬運梭搬送部74將 所載入的基板Gn從裝載位置搬運到卸料位置。 【0077】 當基板Gn到達單片搬運梭搬送部74的卸料位置時,單片搬 運機構136將基板Gn卸下,並搬入至任—台單片式染料吸附單元 441此日1,同樣於基板〇11搬入至該單片式染料吸附單元44之前, 先從該單元44取㈣完成染料謂處理之$外的基板,並加 單元外搬出。 【_】 於搬入有基板Gn的單片式染料吸附單元44,從噴嘴對於基板 Gn之待處理面(多孔質的半導體微粒子層3〇4)吹送染料溶液,而實 24 201246435 料吸附單元44所使用的4&子广層f4/及附敏化染料。又’該染 屬…物、可使用例如金屬駄花青等之金 匕月糸朱料、鹼性染料等之有機染料。又,溶媒可 從該染處理結束時,單片搬運機構136 26。Γΐΐ早兀44 _基贱,並載置於基板轉送台 將已ί理的其Pf機搬運機構24從基板轉送台26取下基板Gn,並 [I里部二收納到平台22上的任-個晶随盒C。 【0080】 單片Si圖元= 頁示在本實施形態之基板處理裝置所組裳的 【0081】 的平140之中心部所設置 .τ 扒十地載置基板G,並使用能於平台142之卜古况 面)施加^&^4’來對基板G的表面(待處ΐ 案化單元34、或使ΪΓ罔^刻裳置的單片式圖 線元38、及使用喷嘴式染料罐置的單 =二木Ή及附早凡44為此第!類型。於此情形, 射蝕刻裝置的喷頭144搭载雷射出射單元,i 喷頭144,搭载狹縫喷嘴之喷吐 及附裝置的 吐口的喷嘴。導體拉層狀、狹縫狀或圓形等複數喷 25 201246435 【0082】 圖3B所不之第2類型係在與處理室或腔$⑽之 Β古持絲板G ’吏用能於旋轉夾盤150之上方沿 水平方向聽直方向鷄的喷頭1S2,來對基板G的表 ^ 式木枓吸附早几44為此第2類型。又’在單 = 裝置的情形、或在單以圖案 染料吸附 頭152格載噴吐出蝕刻液的喷嘴。 ' 【0083】 、 之基LI及載 【0084】 接英2 ^類型(圖4A)中’在平台142上將已處理的基板Gi、盘 ί:=理的基㈣進行交換時,最初是複數支升降銷154從 t ’㈣已纽的基板Gi往上推。在此,清 二:、勺I運以例如後述上部搬運臂卿)從處理室⑽之侧壁 ΪίΪίΐ° SI進來處理室14°中’而從升降銷154承接已處 1 Γ1,並將所承接的基板Gi往處理室140外取走,升降銷 暫時下降。隨後,固持有應接著於該單片式處理單元接受單 理之基板Gj的後述下部搬運臂ML〗進來處理室140中,隨後 的πτϋ54便再次上升以承接該基板Gj。然、後,已成為清空狀態 白=。陳運臂隱〗往處理室⑽外移出後,升降銷154下降至平 σ 42中’而將基板q載置於平台ία上。 【0085】 、斤2類型(圖4B)中’也可藉由使旋轉驅動部148中或其附 没有的升降銷156與上述升降銷154同樣地與搬運臂Μ。、 26 201246435 ML!協同配合而進行升降動作,而在旋 :的方_處_基板Gi、與接著接受‘的基板 【0086】 本實 【0087】 本貫轭开久%之批次式熱處理裝置4〇 狀縱型批次熱處理爐114的兩側配中n而圓筒 wm,且在第!晶圓舟移送機 圓舟載置台75、76、78,並名笛9曰…固,置有3個弟1晶 有3個第2晶圓舟載置a 82、84曰二舟移运機118的周圍配置 台75、76、78中^圓;8^ 。如上述,第1晶圓舟載置 曰圓真澈^ 7^ Γ®舟載置台75、76使用於改裝基板G,而 J11; i 憮受熱處理的基板G進行冷卻。又, 弟』日日圓舟載置台82、84、86 Φ,曰m都32 y。 基板g,晶圓舟載置台82用來# ^曰y σ 4使用於改裝 片數(例如卿片)的處理前基 用來對於剛接受熱處理的基Μ進行^曰函舟載置台86 【0088】 116、^Γ 1 %安裝有保溫筒160,並利用晶圓舟移送機 80B.80C φΐΐ^ 1 -®^8〇Α^ BSE 3 ^ 2 88D' 上。又,H f ®舟加以交替地載置於該保溫筒160 =欠處理片數⑽片)之基板G的狀態下被載置於晶圓 【0089】 80A對HI在晶圓舟支持臂158的晶圓舟(圖5中為晶圓舟 機構二為ί圓舟88E),係藉著由例如線性馬達或滾珠螺桿 冓成之升降機構162的升降驅動,而將其放入熱處理爐 27 201246435 中’亚於既定之溫度下經過一定時間的熱處理時間再 彺熱處理爐114外取出。 丹力乂 【0090】 熱處理爐114内建有例如電阻加熱式的加熱器,而且如 ,’於進行批次處理(熱處理)的期間自不待言,在進行晶圓舟2二 出放入的期間也令加熱器維持於作動的狀能。 【0091】 〜、 固持搬運機構56如後面詳細制,财能-次各 $運機構%會與依序載置於晶圓舟載置台%%上 = 取=、80B、80C中的任二者(圖5中為晶圓舟麵、㈣進^接 一杏且以下述方式進行動作:使用單片搬運臂_广紙】中的任 板G逐片裝入至接取對象之其中另一個 子处里引的基 【0092】 ‘ 細細說明, 及能-植祕! Μ Η 基板叫批次搬運臂雨H)、 MU 、ML可猸☆山土板G的單片搬運臂Μ11,且各個搬運臂 般運機進行水平之進退或伸縮移動。而且,單片/ 82'84 2 進行接取,且以中的任一者圖6中為晶151舟88D、88F) 接取對象之動作:使用批次搬運臂應]。,而從 基板G,並使用單^圓舟母次複數片0〇 地取出已處理後的 至接取對象而將處理前的基板g逐片裝入 【0093】 曰曰: 次式:燒ϋ 在t實施形態之基板處理裝置所組裝的批 之苐1及第4縱型批次煆燒爐12〇、126周圍的 28 201246435 •=二成第2及第3縱型批次假燒爐122、124周圍也分別形成 【0094】 批次所示’在上端已封閉之圓筒狀縱型 90、92。 間並列配置有兩個第3日日日圓舟載置台 【0095】 128在 ί f Vt裝有保溫筒166,並晶®舟移賴 上。又,久彳ΙΪ1曰F1 Λ n Ba囫舟加以父替地載置於該保溫筒16ό 灵板Β在固持有批次處理片數_片)之 基板G的狀態下被載置於晶圓舟支持 【0096】 對於已載置在晶圓舟支持臂16 94Α),係藉由升降機構168 曰圖7中為曰曰0舟 中以使其⑽以溫度下接受 Γ ΐ讀燒爐120 假燒時間後,再加以往煆燒爐12〇 ;卜;;處:且並 ίΓ堯圓外ΓίΓ舟94Α於晶圓舟支持臂164 ^置一定時 晶圓舟^至晶其後,晶圓舟移載機128將 【0097】 假^爐120内建有例如電阻加熱 ^位於其中的烺燒處理期間,使該加㈣以;J二二堇;二, 動,不位於其中的期間則令該加熱器停止作動又:一 平之具有可進行水Hi clever board Gn and other substrates - from the cooling in the atmosphere ^ time :. The wafer boat transfer machine 118 transfers the wafer boat 88E to the wafer boat mounting table 84 for retrofitting. Round 廿 1 1 86 Move [0073] In this way, the single-chip/batch handling mechanism 64 纽 纽 纽 纽 帽 舟 ΐ ΐ Γ Γ ΐ ΐ ΐ ΐ ΐ , , , , , , , , , , , , , , , , , , , , , , , , , , , , The substrate is in the same manner as the portion 66. The batch transporting portion 66 carries the loaded substrate Gn) from the loading position in a fine manner. [0074] When the plurality of substrates G including the substrate Gn arrive at the batch handling shuttle transport portion At the unloading position of 66, the batch transfer mechanism 68 collects the scalar number #substrate G. Then, the batch transport mechanism 68 distributes the plurality of substrates G (which also include the substrate Gn) that are collectively detached to 4 Any one of the vertical batch type simmering furnaces 12, 122, 124, and 126. In this example, the fourth sintering furnace 126 is designed as a distribution target. [0075] 23 201246435 Auntie this situation 'batch The secondary transport mechanism 68 transports the plurality of sheets including the substrate Gn to the secondary transport shuttle #70. The batch transport shuttle transport unit 70 transports the carry G from the loading position to the unloading position in a batch. The sub/H structure 72 removes the plurality of substrates G including the substrate Gn from the batch. The sixth wafer loading station 108, 110 is any one of the wafer boat 112''112β. In this example, the crystal is designed to be loaded onto the wafer boat mounting table 110 together with other substrates G. The boat [0076] also 'when the number of sheets of the substrate G (which also includes the substrate Gn) that has been loaded into the wafer boat 112B reaches the number of batch processing (segmentation), the sixth wafer is used to move the The wafer boat 112B is moved to the fourth crucible furnace U6 such that the substrate Gn is crystallized, and the other substrates on the boat 112B are subjected to the smoldering treatment. The sintered body of the semiconductor fine particle layer 304 is obtained by the dummy burning treatment on the surface to be processed of the f-substrate Gn. When the batch type simmering treatment is completed, the wafer boat n2B is taken out to the crucible furnace 126. The substrate Gn on the wafer 112B is cooled together with the other substrates in the atmospheric space for a certain period of time. Thereafter, the 'batch/monolithic transport mechanism 72 picks up the wafer boat on the boat loading port 11 at a predetermined time point, and in a predetermined order, from the wafer boat 112B in units of one piece. The substrate Gn is extracted, and the extracted substrate Gn is loaded into the single-piece transport shuttle transport unit 74. The one-piece transport shuttle transport unit 74 transports the loaded substrate Gn from the loading position to the discharge position. When the substrate Gn reaches the discharge position of the single-piece conveyance shuttle conveying unit 74, the single-piece conveyance mechanism 136 removes the substrate Gn and carries it into the one-piece single-piece dye adsorption unit 441. Before the substrate cassette 11 is carried into the monolithic dye adsorption unit 44, the substrate outside the dye processing is taken from the unit 44, and the substrate is removed from the unit. [_] The monolithic dye adsorption unit 44 loaded with the substrate Gn is fed with a dye solution from the nozzle to the surface to be processed (porous semiconductor fine particle layer 3〇4) of the substrate Gn, and the material 24 adsorption unit 44 201246435 The 4&sublayer wide layer f4/ and the sensitizing dye are used. Further, the dye may be an organic dye such as a metal phthalocyanine or a basic dye such as a metal phthalocyanine. Further, the solvent can be transported from the single sheet conveying mechanism 136 26 from the end of the dyeing treatment. Γΐΐ 兀 贱 贱 贱 贱 贱 贱 贱 贱 贱 载 载 载 载 载 载 载 载 载 载 载 载 载 载 载 载 载 载 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其A crystal with box C. [0080] The single-chip Si element=page is set in the center portion of the flat 140 of [0081] of the substrate processing apparatus of the present embodiment. The substrate G is placed on the ground, and the substrate 142 is used. Applying ^&^4' to the surface of the substrate G (the singulation unit 34 to be placed, or the monolithic pattern element 38 for smashing, and the use of nozzle dyes) The cans of the single = bismuth and the attached 44 are for this type! In this case, the nozzle 144 of the etch device is equipped with a laser exit unit, i nozzle 144, spout nozzle and attachment device The nozzle of the spit. The conductor is laminar, slit or round, etc. 25 201246435 [0082] The second type of Figure 3B is in the same room with the processing chamber or cavity $ (10) By using the head 1S2 which can listen to the straight chicken in the horizontal direction above the rotating chuck 150, the table raft of the substrate G is adsorbed as early as 44 for this type 2. In the case of the single = device, Or in the nozzle of the pattern dye adsorption head 152, the nozzle for ejecting the etching liquid is carried out. ' [0083], the base LI and the load [0084] (Fig. 4A) When the processed substrate Gi and the substrate (4) of the disk are exchanged on the stage 142, initially, the plurality of lift pins 154 are pushed up from the substrate Gi of t'(4). Therefore, the second spoon: the spoon I is transported from the side wall of the processing chamber (10) to the processing chamber 14° from the side wall of the processing chamber (10), and the substrate 1 is received from the lifting pin 154, and the substrate is received. The Gi is taken away from the processing chamber 140, and the lift pin is temporarily lowered. Subsequently, the lower holding arm ML, which will be described later, should be fed to the substrate Gj, which is received by the one-chip processing unit, into the processing chamber 140, and the subsequent πτϋ54 rises again to receive the substrate Gj. After that, it has become empty. White =. After the transfer of the arm to the processing chamber (10), the lift pin 154 is lowered to the flat σ 42 and the substrate q is placed on the platform ία. In the type 2 (Fig. 4B), the lift pin 156 in the rotary drive unit 148 or the lift pin 156 may be attached to the transfer arm 同样 in the same manner as the lift pin 154. 26 201246435 ML! The lifting operation is carried out in cooperation with the ML, and the substrate is heated and the substrate is subsequently received. [0086] This is a batch-type heat treatment device. 4 sides of the vertical batch batch heat treatment furnace 114 with n and cylinder wm, and in the first! Wafer boat transfer machine boat mounting table 75, 76, 78, and the name flute 9 曰 ... solid, set with 3 brothers 1 crystal, 3 second wafer boat mounted a 82, 84 曰 two boat transfer machine 118 is arranged around the table 75, 76, 78; round; 8^. As described above, the first wafer boat is placed on the wafer, and the boat mounts 75 and 76 are used to retrofit the substrate G, and J11; i 怃 the heat-treated substrate G is cooled. In addition, the younger day boat row 82, 84, 86 Φ, 曰m are 32 y. The substrate g, the wafer boat mounting table 82 is used for #^曰y σ 4, and the processing front for the number of modified sheets (for example, the sheet) is used for the substrate that has just been subjected to the heat treatment. 】 116, ^ Γ 1 % installed with insulation tube 160, and using the wafer boat transfer machine 80B.80C φ ΐΐ ^ 1 -® ^ 8 〇Α ^ BSE 3 ^ 2 88D'. Further, the H f ® boat is alternately placed on the substrate G of the heat-insulating cylinder 160 = the number of under-processed sheets (10), and is placed on the wafer [0089] 80A to HI on the wafer boat support arm 158. The wafer boat (the wafer boat mechanism in FIG. 5 is the boat 108E) is placed in the heat treatment furnace 27 201246435 by the lifting drive of the lifting mechanism 162 formed by, for example, a linear motor or a ball screw. 'After a predetermined temperature, the heat treatment time is taken out of the heat treatment furnace 114.丹力乂 [0090] The heat treatment furnace 114 is internally provided with, for example, a resistance heating type heater, and, for example, during the period of batch processing (heat treatment), it is not necessary to carry out the wafer boat 2 two-out period. It also keeps the heater in an active state. [0091] ~, the holding and transporting mechanism 56 as detailed in the following, the financial-secondary each transporting agency% will be placed on the wafer boat mounting platform %% = take =, 80B, 80C (In Figure 5, the wafer surface, (4) is connected to an apricot and operates in the following manner: the board G in the single-piece carrier arm_wide paper is loaded one by one to the other of the objects to be picked up. The base cited in the section [0092] 'Detailed description, and energy-physical! Μ Η The substrate is called batch handling arm rain H), MU, ML can be 猸 ☆ 山 山 山 山 山 山 山 山 , , , Carrying the arm-like transporter for horizontal advancement or retraction. Moreover, the single piece / 82'84 2 is picked up, and any one of them is shown in Fig. 6 as a crystal 151 boat 88D, 88F) The action of picking up the object: using the batch handling arm should be]. And, from the substrate G, and taking out the processed object to the pick-up object using the single-chip wafer, the substrate g before processing is loaded into pieces one by one [0093] 曰曰: Minor: Burning In the batch 苐 1 and the fourth vertical batch sizzling furnaces 12 〇 and 126 assembled in the substrate processing apparatus of the embodiment, 201224 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Around the 124, the [0094] cylindrical vertical 90, 92 which is closed at the upper end is also formed. There are two 3rd day Japanese boat loading platforms arranged side by side. [0095] 128 is equipped with a heat insulating tube 166 at ί f Vt, and the crystal boat is moved. In addition, the long-term 曰F曰 囫 n Ba囫 boat is placed on the wafer in the state of the substrate G of the insulating tube 16 ό Β Β 固 固 固 固 固 固 固Boat support [0096] For the boat support arm 16 94Α), it is carried out by the lifting mechanism 168, in Figure 7, in the boat, so that (10) accepts the temperature in the Γ ΐ ΐ 120 120 After the burning time, add 12 煆 煆 〇;;;; and Γ尧 Γ尧 Γ Γ Γ Α Α 94 94 94 94 94 94 94 94 94 94 94 94 94 94 94 94 94 94 94 94 94 94 94 The transfer machine 128 will have [0097] a built-in electric furnace 120, for example, a resistance heating device, during which the heating process is performed, so that the addition (4) is performed; and the second period is The heater stops working again: one flat has water
的1支(或兩支)批次搬運臂ma10 如10片)基板G 序裁置於晶圓舟載置台90、92上之第3’曰批機構68會與依 上之第3晶圓舟94A、94B中的任 29 201246435 一者(圖5中為晶圓舟94B)進行接取,且使用批次搬運臂ΜΑ〗。, 而從其接取對象之晶圓舟每次複數片〇〇片)地取出已處理後的基 板G ’並/或將處理前的基板G加以每次複數片(1〇片)地裝入至宜 接取對象之晶圓舟。 【0099】 另一方面,於圖8中,批次/單片搬運機構72係與單片/批次 搬運機構64相同,具有能一次各固持複數片(例如川片)基板g 的批次搬運臂MU⑴、及能-次各固持丨片基板G的單片搬運臂 ML〗’且各個搬運臂MU1G、ML!可獨立地進行水平之進退或伸縮 移動。而且’批次/單片搬運機構72會與依序載置於晶圓舟載置台 108、110上之第6晶圓舟112A、112B中的任-者(圖8中為晶圓 舟112A)進行接取,且使用批次搬運臂娜〇,而將處理前的基 G。加以每次複數片(1〇片)地裝入至其接取對象之晶圓舟,並使用 單片搬運臂ML〗,而從其接取對象之晶圓舟逐片取出已處理 其你G。 [搬運梭搬送部之構成] 【0100】 圖9係顯不單片搬運梭搬送部50的構成及搬運梭移動。 其他單片搬運梭搬送部58、74也具有與單片搬運梭搬送部5 樣的構成及功能。 【0101】 如圖所示,單片搬運梭搬送部5〇(58、7 172,在錯直方向上空出—定間隔或空間二= 者糸統長邊方向(x方向)平行延伸;與上部及下部單片搬 SLi ’在該等搬運路線m、172上獨立地進行直進移 1力74 片搬運梭SUl、SLl具有水平地承載1片基板G的托架 其i’r i m設有下述各料:固持部176,用來固持住 基板G的四角隅;及複數之升降銷178, 裝^?rf基板G以水平姿勢升降。又,般二 1 1纟直進私動係以馬達或飯筒等為驅動源,而使用線性運1 (or 2) batch handling arm ma10 such as 10) substrate G is placed on the wafer boat mounting table 90, 92, the 3' batch mechanism 68 will be associated with the third wafer boat Any of the 29 201246435 of 94A, 94B (wafer boat 94B in Fig. 5) is picked up, and the batch handling arm is used. And taking out the processed substrate G′ from each of the plurality of wafers from which the object is picked up and/or loading the substrate G before processing into each of the plurality of sheets (one wafer) It is suitable to pick up the wafer boat of the object. On the other hand, in FIG. 8, the lot/monolithic transport mechanism 72 is the same as the single-piece/batch transport mechanism 64, and has a batch transport capable of holding a plurality of substrates (for example, a Kawasaki) substrate g at a time. The arm MU (1) and the single-piece transport arm ML' of each of the energy-retaining cymbal substrates G can be independently advanced and retracted or telescopically moved by the respective transport arms MU1G and ML!. Further, the 'batch/monolithic transport mechanism 72 and any of the sixth wafer boats 112A and 112B sequentially placed on the wafer boat mounts 108 and 110 (the wafer boat 112A in FIG. 8) The pick-up is carried out and the batch-handling arm is used, and the base G before processing will be used. Each time a plurality of pieces (1 piece) are loaded into the wafer boat of the object to be picked up, and the single-piece carrying arm ML is used, and the wafer boat from which the object is taken is taken out one by one, and the G has been processed. . [Configuration of the transport shuttle transport unit] [0100] Fig. 9 shows the configuration of the transport shuttle shuttle unit 50 and the movement of the transport shuttle. The other single-piece transport shuttle transport units 58 and 74 also have a configuration and a function similar to the single-piece transport shuttle transport unit 5. [0101] As shown in the figure, the single-piece transport shuttle transport unit 5〇 (58, 7 172, vacant in the wrong direction - a fixed interval or a space two = the long side direction (x direction) of the 平行 system extends in parallel; And the lower single-piece SLi' is independently moved linearly on the transport routes m and 172. The force of the transport shuttles SU1 and SL1 has a carriage for carrying one substrate G horizontally. Each material: a holding portion 176 for holding the four corners of the substrate G; and a plurality of lifting pins 178 for loading and lowering the substrate G to rise and fall in a horizontal posture. Further, the two-in-one straight-forward private system is a motor or a rice. The cylinder is used as a driving source, and the linear operation is used.
30 201246435 •動m朱螺桿或皮帶等之直進移動機構來進行。 有上========分別設 停止而暫時停留以載入美板兩^ i運梭%、SLl 之下游側端部(圖中的右側 有广m =二,用來供兩單片搬運梭Sy⑶= 【0103】 H ^H ΐM運梭SUl在上部裝載位置FU恰停留-定時fl ΊΓ 來進订基板G的裝載後,於上部搬運 寺間Tpu 定移動時間沿著去程方向(χ方向 亩上乂—疋速度或一 點之上部卸料位置W時(便直 巧當其到達終 進行該基板G的卸料。鈇後,已妙 :I留疋時間Twu以 =搬運梭SUl在沒有基板的清^^ =單 於上部搬運路線m上以„定速度或 =^置衝起, (-X方向)進行直進移動,並且^ ’ Β〗/;σ者回程方向 時便在此停止,而恰停留Y達…點之上部裝载位置FU 又,上部單片搬α ^ B Fu以進行新基板G的裝載。 之裝載、ΪίΪίϋ定週期即2Ts,而反複進行由如上述 T 3卸枓、回返移動所構成的-連串動作。在此, ίοΐοΐ】板在該基板處理裝置的產距時^ 日士門5樣f 1下部單片搬運梭SLl*下部裝載位置FL怜停留-定 172 部卸料位置WL時便在此停而If留^^達=之下 基板G的卸料。然後,已經 f Twl以進们亥 方向)進行直綱,血當 201246435 ϊίίί搬留;新基板G的裝載。又, 裝載【3=動、卸料、回返移動所構m复;^由如上述之 之往術㈣搬運梭% 部單片搬運梭SUl停留晋目=關係:也就是說,上 進行基卩在I恰停_時間以 載入基板G,而以從上部上部單片搬運梭叫 方式,於上雜運以=向/,=位±置而的 程方向(X方向)進行直進移動時,同㈡去 速_-移動= 【0106】 的4 ΐΐ單片搬運梭SUl停留在上部卸料位置卿卩進行趣G 卸^時’下部單片搬運梭SLi *下部裝載位置孔恰停 間以進行基板G的裝載,亦即Tfl=Twu。然後,。夺30 201246435 • Move in a straight moving mechanism such as a screw or belt. There is a ======== respectively stop to temporarily stop to load the downstream side of the US board two ^ i shuttle %, SLl (the right side of the figure has a wide m = two, for two orders Suspension shuttle Sy(3)= [0103] H ^H ΐM shuttle SU1 is in the upper loading position FU just stays - timing fl ΊΓ to load the substrate G, and then move the Tpu in the upper part to move the time along the direction of travel ( χ 亩 亩 亩 亩 亩 乂 或 或 或 或 或 或 或 或 或 或 或 或 或 亩 亩 亩 亩 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( The clearing of the substrate is not performed on the upper conveying path m at a constant speed or = ^, and the (-X direction) is moved straight, and ^ ' Β〗 /; σ is stopped here. And just stay at the Y point...the upper loading position FU, and the upper single piece moves α ^ B Fu to load the new substrate G. The loading, Ϊ Ϊ Ϊ ϋ 即 即 即 即 即 即 2 2 2 2 2 2 2 2 2 2 2 2 2 -, return movement constitutes a series of actions. Here, ίοΐοΐ] board in the substrate processing device production distance ^ 日士门5 sample f 1 lower single piece The shuttle SLl* lower loading position FL pity stops - when the 172 part discharge position WL is stopped, and if I leave ^^ = = the discharge of the substrate G. Then, f Twl has been carried out in the direction of the Hai Straight, blood when 201246435 ϊίίί relocation; loading of the new substrate G. Also, loading [3 = moving, unloading, returning movement, m complex; ^ by the above-mentioned (4) handling shuttle% single-piece handling Shuttle SUl stays in the eye = relationship: that is to say, the base is on the I stop to load the substrate G, and the single-piece transport from the upper part of the shuttle mode, on the upper hand to == /, = When the direction of the position is set to the direction of the direction (X direction), the same as (2) Deceleration _-Moving = [0106] The 4 ΐΐ single-piece transport shuttle SUl stays in the upper discharge position. The lower single-piece transport shuttle SLi * the lower loading position hole is just stopped to load the substrate G, that is, Tfl=Twu. Then,
入基板G ’而以從下部裝载位置孔朝向下部卸:斗位置= 的方式,於下部搬運路線172上以一定 〜 置WL ΐΐ=(χ方向)進行直進移動時,同時‘單^運梭 =基板的清空狀態下,以從上部卸料位置_朝 = 置FU的方式,於上部搬運路線17〇上以同一速度或同^ = 沿著回程方向(一X方向)進行直進移動。總言之 夕力夺間 TFL=TWU 的關係。 成 TFU-TWL= 【0107】 如上述’本實施形態之基板處理裝置中,上部 ,從上部裝載位置FU往上部卸料位置·的基;^運^, 與下部單㈣触SLl之從下部輯錄FL往下部卸== 32 201246435 .的基片搬運,係每產距時間L地交替進行。When entering the substrate G' and moving from the lower loading position hole toward the lower portion: the bucket position =, when the straight movement is performed on the lower conveyance path 172 with a certain value of WL ΐΐ = (χ direction), the same time = In the empty state of the substrate, the straight forward movement is performed at the same speed or with the same direction (= X direction) on the upper conveyance path 17〇 from the upper discharge position_toward=set FU. In the end, the relationship between TFL and TWU is the same. TFU-TWL=[0107] In the above-described substrate processing apparatus of the present embodiment, the upper portion is the base from the upper loading position FU to the upper discharge position, and the lower single (four) touch SL1 is recorded from the lower portion. The substrate transport of FL to the lower portion == 32 201246435 . is alternately performed every time interval L.
的片卿之基板G ι〇^τ%Λ ^ SL^ 重叠成-體而構成。 運才夂L1以夾隔一定間隙的方式 【0109】 進行在上部裝載織Fu恰停留—定時間來 定速卢^ G的裝載後,於上部搬運路線170上以~ 達終‘ίί上直進移動’並且當其到 逸扞娜Η ίΊΠ μ、甘f WU禮在此停止,而恰停留一定時間以 上部批丈搬的卸料。然後,已經過該停留時間後, 恥起,於上i般運清m ϊ上部卸料位置 碰古心/-h 上疋速度或一定移動時間沿著 便在 ==般運梭SL “往返動作二者基本上分別 批逆ΐϊί逆相位的關係。因此’例如也可使得上部 ❹與峨次搬運梭SL1G以同相位進行往返動作, ί者i f rf運梭SUl。或下部批次搬運梭SLiq進行運轉。而 住-去雜次搬運梭SUl0或下部批次搬運梭SLi〇的其中 任者來構成批次搬運梭搬送部66 【0111】 又,單片搬if梭搬送部50、58及批次搬運梭搬送部66中, 33 201246435 也可於搬運梭設置用來在水平面内旋轉基板的旋轉機構。 [單片搬運機構之構成] 【0112】 圖11及圖12係顯示單片搬運機構48的構成及搬運臂移動範 圍。又,其他•單片搬運機構52、56 ' 60、136也具有與單片搬運 機構48同樣的構成及功能。 【0113】 單片搬運機構48(52、56、60、136)具有上下兩段的單片搬運 臂、ML】,該等搬運臂可在方位角方向(0方向)上旋轉,且可 在金。直方向(Z方向)上升降,還可分別獨立地進行水平之進退戋 縮移動。更詳言之,單片搬運機構48如圖U所示,於具有例如 線性馬達或滾珠螺桿機構之g]找升降轉部⑽的升降驅動轴 182上,以兩段式重疊而可升降方式安裝有上部及下部搬運 184U、184L,且於升降驅動軸182上,將各搬運本體184U、184^ =為可方向(θ方向)上分聊立地旋轉義成任意的方 本體圓、]胤上,將兩單片搬運臂MU】、隱】 立地進退或伸縮移動。又,各個單㈣運臂祕|、 持。】構成為可將矩形的基板G以可拆卸方式私載置、載持或固 【0114】 此種構成的單片搬運機構48(52、56 =二:的ί 板轉送台(上部載置】下邶早片搬運梭JSL])或基 ㈣單片搬運梭搬送部 =㈣⑽嫩===== 【0115】 又,位於搬 運線46之開端的基板轉送台2〇係把能將工片基 /ς 3 34 201246435 • 板G載置於複數之支持銷或升降銷而水平地支持的一對載置台 2^U、加以上下兩段式重疊所配置而成。從旁邊的單片搬運機 t i8u,來’上部載置台2〇U相當於在卸料位置靜止之上游側的上 ^早片搬運梭:rsR ’下部載置台2GL相當於在卸料位置靜止之上 游側的下部單片搬運梭JSLi。 【0116】 同樣地’位於搬運線46之終端的基板轉送台26也與基板轉 送台20相同’係把能將1片基板G載置於複數之支持銷或升降銷 而7、平i支持的-對載置台26U、26L加以上下兩段式重疊所配置 從旁邊的單片搬運機構136看來,上部載置台26u對應於 在展載位置靜止之下游側的上部單片搬運梭KSU〗,下部載置台 ML 裝載位置靜止之下游側的下部單諸運梭KSLl。 單片式工作電極成膜單元%側的單片搬運機構牝與批次式 :处理f置40側的單片搬運機構%之間所設的基板轉送台%, 是把能將1片基板G載置於複數之支持銷或升降銷而水平 一對載置台5411、5礼加以上下兩段式重疊所配置而成。 4早片搬運機構48側看來,上部載置台5W對應於在裝載位置靜 側的上部單片搬運梭KsUi,下部載置台54l對應於在裝 載立置#止之下游側的下部單片搬運梭KSL〗。另一方面,從單片 側看來’上部載置台54U對應於在卸料位置靜止之上 ' 、。皁片搬運梭JSU1,下部載置台54L對應於在卸料位置 月f止之上游側的下部單片搬運梭JS 【0118】 μ 又,單片/般運梭搬送部50的終端部(卸料位置WU/WL)及單 搬運梭搬雜%的開端部(錄位置FU/FL)也可與基板轉送台 54上下重疊。 【0119】 片式格子狀配線成膜單元38侧的單片搬運機構60與 • 〖_人工”、、处理裝置40側的單片/批次搬運機構64之間所設的基板 35 201246435 轉运台62 ’其依然是把能將!片基板G載置於之 降銷而水平地支持的-對載置台62u、6 以 切二 配置而成。從單片搬運機構6〇側看爽 乂土下兩&式重酬 裝載位置靜止之下游側的 :應之下游側的下部單片搬= Ξ二64側看來,上部載置台腿對應於ί 對HI位置靜止之上游側的下部單…運^載置 次搬 i 梭:梭 62上下重疊。 1 卩(裝载位置FU/FL)也可與基板轉送台 [單片搬運機構之基本動作] 【0121】 與各構™'136) 取來=”触與進行接 運臂該單片搬運機構於已將兩單片搬 本體谢U、狐回返位置的狀態下’令各個搬運 MU,、ML舰y ^升降軸及旋轉移動,以將兩單片搬運臂 單片搬運臂===處二單元(未圖示)的前面。此時’兩 者例如下部料搬運臂规1固持 部單片搬運臂的基板Q L而其中另一者即上 態的⑽清空狀 部單13Α之⑻所示,令清空狀態的上 運臂_該接取== = = = 201246435 • 13A^(c)f示,令上部單片搬運臂MU1後退或收縮移動至原 4置,而從該處理單元搬出已處理的基板。 【0124】 如此將已處理的基板Gi搬出後,該單片搬運機構隨即如圖 Litd)所示般地進行升降移動(圖示之情形為上升移動),而將固 J J處理前之基板Gj的T部單片搬運臂紙丨對準絲板傳遞用的 。再來’如圖13Β之⑷所示,令下部單片搬運臂狐]前 進,伸展㈣至前進位置,而將處理前的基板Gj搬人至該處理單 υϊΐ辟然後’如圖13B之⑴所示,令已成為清空狀態的下 。戸早片搬運臂MLi後退或收縮移動至原位置。 【0125】 士實施形態之各單片搬運機構48、52、%、⑽、136可使用 片搬運臂MU!、ML】,而同時或並行地進行:動作!,從盥 =妾4之上游側的單片搬運梭肋]/JSLi(或基板轉送台)卸下ι片 ’將1片基板G載入至與其接鄰之下游側的單 片搬運杬KSU^KSL/或基板轉送台)。 【0126】 圖14A係顯示各單片搬運機構48、5 游 咐搬運梭现L片基板〇j且同_ 下游侧之下部單片搬運梭KSLl的動作。於此情形,該單片 =構如圖14A之⑻所示,於已將兩單片搬運臂= 回返位置的㈣τ,令各她運賴_、跳 而下部持==搬運臂_形成清空狀態, 清i狀Ϊ。載有3 ’而下游側的下部單片搬運梭KSLl形成 【0127】 接著’該單片搬運機構如圖14A之⑼所示,令上部翠片搬運The substrate of the tablet is G ι〇^τ%Λ ^ SL^ and is formed by overlapping into a body. The L1 is transported in a manner that is separated by a certain gap [0109]. After loading the upper loading weave, the fixed time is fixed, and after the loading of the fixed speed, the upper moving path 170 is moved to the end. 'And when it is to 捍 捍 Η ΊΠ ΊΠ 、 、 甘 甘 甘 甘 甘 甘 甘 礼 礼 礼 礼 礼 礼 礼 礼 礼 礼 礼 礼 礼 礼 礼 礼 礼 礼 礼Then, after the dwell time has elapsed, the shame is lifted, and the upper unloading position of the m ϊ 碰 古 古 / / - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - The two basically reverse the relationship of ΐϊί inverse phase. Therefore, for example, the upper ❹ and the secondary transport shuttle SL1G can be reciprocated in the same phase, ί if rf shuttle SUl. or the lower batch transport shuttle SLiq The operation of the single-handed shuttle shuttle transport unit 50, 58 and the batch is performed by the resident-to-missing shuttle SU1 or the lower batch transport shuttle SLi〇. In the transport shuttle transport unit 66, 33 201246435, a rotation mechanism for rotating the substrate in the horizontal plane may be provided in the transport shuttle. [Configuration of Monolithic Transport Mechanism] [0112] FIGS. 11 and 12 show the single-piece transport mechanism 48. The configuration and the transfer arm movement range are also provided. The other single-piece conveyance mechanisms 52, 56' 60, 136 also have the same configuration and function as the single-piece conveyance mechanism 48. [0113] Single-piece conveyance mechanism 48 (52, 56, 60) , 136) single-piece transport arm with upper and lower sections, ML 】, the carrying arms can be rotated in the azimuthal direction (0 direction), and can be raised and lowered in the gold direction, the straight direction (Z direction), and the horizontal advance and retreat collapsing movement can be independently performed. More specifically, As shown in FIG. U, the single-piece conveying mechanism 48 is mounted on the lifting/lowering shaft 182 of the lifting/lowering portion (10) having, for example, a linear motor or a ball screw mechanism, and is mounted on the upper and lower sides in a two-stage manner. 184U, 184L, and on the lifting and lowering drive shaft 182, the respective conveying bodies 184U, 184^ = can be rotated in the direction (θ direction) to form an arbitrary square body circle, and the two single-piece conveying arms MU], hidden] Standing forward and backward or telescopic movement. In addition, each single (four) arm is secret |, holding.] The rectangular substrate G can be detachably placed, carried or fixed [0114] Single-piece transport mechanism 48 (52, 56 = two: ί plate transfer table (upper placement) 邶 邶 early transport shuttle JSL]) or base (four) single-piece transport shuttle transport section = (four) (10) tender ===== 0115] Also, the substrate transfer table 2 at the beginning of the transfer line 46 can be used to turn the work substrate/ς 3 34 2012464 35 • The plate G is placed on a pair of mounting tables 2^U that are horizontally supported by a plurality of support pins or lift pins, and is arranged by overlapping the upper and lower sections. From the side of the single-piece conveyor t i8u, The upper stage 2A corresponds to the upper side of the upstream side of the discharge position: the rsR 'lower stage 2GL corresponds to the lower single-piece transport shuttle JSLi on the upstream side of the discharge position. [0116 Similarly, the substrate transfer table 26 at the end of the transfer line 46 is also the same as the substrate transfer table 20, which is capable of placing one substrate G on a plurality of support pins or lift pins. The mounting tables 26U and 26L are arranged in a vertically stacked manner. The upper mounting table 26u corresponds to the upper single-piece transporting shuttle KSU on the downstream side of the stationary position at the loading position, and the lower mounting table is provided. The ML is loaded with the lower single shuttle KSL1 on the downstream side of the stationary position. Monolithic working electrode film forming unit % side single-piece conveying mechanism 批次 and batch type: substrate transfer table % provided between the single-sheet conveying mechanism % on the processing side 40, is capable of one substrate G It is placed on a plurality of support pins or lift pins placed on a plurality of levels, and the horizontal pair of mounts 5411 and 5 are arranged in a vertical manner. 4, the upper stage 5W corresponds to the upper single-piece conveyance shuttle KsUi on the static side of the loading position, and the lower stage 54l corresponds to the lower single-piece conveyance shuttle on the downstream side of the loading stand # KSL〗. On the other hand, from the side of the single piece, the upper stage 54U corresponds to the above position at the discharge position. The soap sheet transporting shuttle JSU1 and the lower mounting table 54L correspond to the lower single-piece transport shuttle JS on the upstream side of the discharge position month f. [0118] μ, and the end portion of the single-piece/normal shuttle transport unit 50 (unloading) The opening portion (recording position FU/FL) of the position WU/WL) and the single transport shuttle movement % may be vertically overlapped with the substrate transfer table 54. [0119] The single-piece transport mechanism 60 on the side of the chip-type grid-like wiring forming unit 38 and the substrate 35 provided in the single-piece/batch transport mechanism 64 on the processing device 40 side are transported to the substrate 35 201246435. The table 62' is still arranged to be horizontally supported by the chip substrate G placed thereon. The pair of mounting tables 62u and 6 are arranged in a second shape. The lower two & type reloading position is on the downstream side of the stationary side: on the downstream side of the lower single piece moving = Ξ 2 64 side, the upper mounting leg corresponds to the lower part of the upstream side of the HI position stationary... Move the load to move the shuttle: the shuttle 62 overlaps vertically. 1 卩 (loading position FU/FL) can also be used with the substrate transfer table [basic operation of the single-chip transport mechanism] [0121] and each structure TM'136) Come = "Touch and carry the pick-up arm. The single-piece transport mechanism has moved the two single-pieces to the U, the fox return position, so that each transport MU, ML ship y ^ lifting shaft and rotational movement, will Two single-piece transport arm single-piece transport arm === at the front of the second unit (not shown). At this time, both of them are, for example, the substrate QL of the single-piece transfer arm of the lower material transport arm gauge 1 and the other one, that is, the upper (10) empty portion 13 (8) of the upper state, so that the upper arm of the empty state is _ Receiving == = = = 201246435 • 13A^(c)f indicates that the upper single-piece transfer arm MU1 is moved backward or contracted to the original position, and the processed substrate is carried out from the processing unit. [0124] After the processed substrate Gi is carried out as described above, the single-piece transport mechanism is then moved up and down as shown in FIG. Litd) (in the case of the ascending movement in the illustrated case), and the substrate Gj before the solid JJ process is used. The T-part single-piece transport arm paper cassette is aligned with the silk plate for transmission. Then, as shown in FIG. 13(4), the lower single-piece transport arm fox is advanced, extended (four) to the forward position, and the substrate Gj before the processing is moved to the processing unit and then 'as shown in FIG. 13B (1). Show, so that it has become empty. The early delivery arm MLi moves back or retracts to its original position. [0125] The single-piece transport mechanisms 48, 52, %, (10), and 136 of the embodiment can be operated simultaneously or in parallel using the sheet transport arms MU!, ML]: , the single-piece transport shuttle rib]/JSLi (or the substrate transfer table) is removed from the upstream side of the 盥=妾4, and the one-piece substrate G is loaded to the downstream side of the adjacent one. KSL / or substrate transfer station). Fig. 14A shows the operation of each of the single-piece transporting mechanisms 48, 5 to transport the shuttle L-shaped substrate 〇j and the lower-side downstream single-piece transport shuttle KSL1. In this case, the single piece = as shown in (8) of FIG. 14A, in which the two single-piece carrying arms = (four) τ of the return position, so that each of her is _, jumped to the lower part == the carrying arm _ is cleared. , clear i-like. The lower single-piece transport shuttle KSL1 carrying the 3' downstream side is formed. [0127] Next, the single-piece transport mechanism is shown in FIG. 14A (9), and the upper green sheet is transported.
S 37 201246435 臂MU】前進或伸展移動,而從上游側的上部單片;般運梭Jsu〗卸下 (承,)基板Gj ’同時令下部單片搬運臂w前進或伸展移動,而 將基板Gi載入^專遞)至下游側的下部單片搬運梭KSL〗。然後,如 f 14A之(c)所示,將上部單片搬運臂廳丨及下部單片搬 拉回至原位置。 1 【0128】 圖14B係顯示單片搬運機構48、52、% 之下部單⑽運梭肌卸下1絲板Gj神如^反S 37 201246435 Arm MU] Advancing or stretching, and the upper single piece from the upstream side; the general shuttle Jsu removes the substrate Gj' while advancing or stretching the lower single-piece transfer arm w, and the substrate Gi loads ^post) to the lower single-piece transport shuttle KSL on the downstream side. Then, as shown in (c) of f 14A, the upper single-piece carrier arm and the lower single piece are pulled back to the original position. 1 [0128] Figure 14B shows the single-piece handling mechanism 48, 52, % lower single (10) shuttle muscle removal 1 silk plate Gj God as ^ anti
Hlf ΐ之上部單片搬運梭KSUl的動作。於此情形,該單片搬 =構如圖14B之(a)所示’於已將兩單諸運臂_、紙|拉回 ^位置或回返位置的狀態下,令各個搬運本體18w、mL 移動’以將下部單片搬運臂隱1抵接在上游侧的 邱:ρ ,運板JSL, ’將上部單片搬運臂題丨抵接在下游側的上 運於=固持有基板Gi。又,上游側的下部單片搬 清才i狀银1載有基板]’而下游側的上部單片搬運梭KSU|形成 【0129】 臂機構如圖14B之漸示’令下部單片搬運 申!it動’而從上游側的17部單片搬運梭JSLl卸下 令上部單片㈣臂題1前進或伸展移動,而 囝夕义傳遞至下游側的上部單片搬運梭KSU1。然後,如 ί回至ίΓί Γ,將上部料崎f廳1及下部料搬運臂随^ 【0130】 w又伽就本實施形態之各單片搬運機構48、52、56、60、136 :另-搬運形態而言,可並行或 6 搬運臂MU】、W *,主蓉胸使勁作1於兩個早片 叫,從上游_單>;搬運|則、如部單片搬運臂 其缸r .純a, 連才JSU】/JSLl(或基板轉送台)卸下1片 基板G,及動作2,主要使用其中另一者即下部單片搬運臂紙】片 38 201246435 .^片基板G載入至下游側的單片搬運梭KSIVKSL〗(或基板轉送 【0131】 例如’使用上部單片搬運臂廳 梭JSUl卸下1片基板Qi,並使用下部單^ t 同樣之並行或同時的動作=曰搬t闲3時’可進行與圖ΜΑ 上游側的下部單片單片搬運臂卿,從 搬運臂ML】,將i片美柄Γ. ^卸5下片基板Gj ’並使用下部單片 i84u > i84L ί^ S i ,妾f下游側的上部搬運梭卿。再來,如圖 ^ Gj 所示’將已成為清空狀態的下部單片搬運臂=拉= 【0133】 接著’該單片搬運機構如圖Hlf ΐ The action of the single-piece handling shuttle KSUl on the top. In this case, the single piece is configured as shown in (a) of FIG. 14B in a state in which the two single arms _, paper | are pulled back to the position or the return position, so that the respective transport bodies 18w, mL are provided. Move 'to lower the single-piece transport arm to abut on the upstream side of the qi: ρ, the transport plate JSL, 'the upper single-piece transport arm's inscription on the downstream side is transported to the fixed-holding substrate Gi. In addition, the lower single piece on the upstream side is removed and the i-shaped silver 1 carries the substrate]', and the upper single-piece transfer shuttle KSU| on the downstream side is formed [0129]. The arm mechanism is shown in Fig. 14B. ! It is moved and the 17 single-piece transport shuttle JSL1 is removed from the upstream side to advance or extend the upper single-piece (4) arm, and the upper single-piece transport shuttle KSU1 is transferred to the downstream side. Then, if ί returns to ίΓί Γ, the upper material and the lower material handling arm of the first and second material handling arms are combined with each other, and the single-piece conveying mechanisms 48, 52, 56, 60, and 136 of the present embodiment are additionally: - In terms of handling mode, the arm MU can be moved in parallel or 6, W *, the main chest is made to be 1 in two early films, from the upstream _ single >; handling | then, the monolithic handling arm cylinder r. Pure a, LJJ/JSL1 (or substrate transfer table) removes one substrate G, and action 2, mainly uses the other one, that is, the lower single-piece transfer arm paper] sheet 38 201246435 . Loaded to the downstream side of the single-piece transport shuttle KSIVKSL (or substrate transfer [0131] For example, 'Use the upper single-piece transfer arm shuttle JSU1 to remove one substrate Qi, and use the lower single-t-t parallel or simultaneous action = 曰 t t 3 3 时 可 可 可 可 可 可 可 可 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游 上游I84U > i84L ί^ S i , the upper part of the downstream side of the 妾f transports the shuttle. Then, as shown in Fig. Gj, the lower single-piece transport arm that has become empty is = Pull = [0133] Then 'the single piece handling mechanism is as shown
騰、狐進行升降移動及旋轉移動,運本體 搬運臂_抵接在上游側的下部單片搬:;^狀=的,,單片 fe)所不’令上部單片搬運臂 1 ’而’口,15B « 〇j ° ^ 15ΒΪ^ 拉回至原位置 【0134] *下游側之單卿㈣戰= 39 201246435Teng and fox move up and down and rotate, and the main body transport arm _ abuts the lower part of the upstream side to move: ^^==, single piece fe) does not make the upper single piece transport arm 1 'and'口,15B « 〇j ° ^ 15ΒΪ^ Pull back to the original position [0134] *The downstream side of the single (four) battle = 39 201246435
上述,可將上游側單片搬運梭JS 行接取I運機構可進 ί單片式清洗單元32及單片式_化^^處理/元A、· 則步驟的1台單片式處理單元A與後步驟的卜單^於此情f, 之單片處理(單片清洗處n加既定 〜t4的時點卜_間相當於產料間Ts ^列如時點心 臂ML】上,等候穿㈣下早片搬運機構的下部單片搬運 板G2停留在在=伯的/部單_片搬運梭蛛。第2號基 留f執行前(先前)步i的單内内。此第3,號基板〇3停 部早.片【=咖〗载入第4號基板g4而到達上部卸 4A .二f後’ 5亥單片搬運機構以目14A所示之動作,你ffl μ部留Η MU】從上游側的上部單片搬運梭 σ 同時使用下部單片搬運臂驢脾笛 Ρ下第4 7虎基板G4’ 部單片搬運梭KSLl(t ^2)1糾1絲板G獻至下游側的下In the above, the upstream single-chip transport shuttle JS can be connected to the single-chip cleaning unit 32 and the single-chip processing unit of the single-chip processing unit. A and the latter step of the single ^ ^, the single piece of processing (single piece of cleaning n plus the time point of t4 ~ _ between the production of Ts ^ column as the snack arm ML), waiting to wear (4) The lower single-piece conveying plate G2 of the lower morning conveying mechanism stays in the single/inside of the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The number of the substrate 〇3 stops early. The film [= 咖] is loaded into the fourth substrate g4 and reaches the upper unloading 4A. After the second f, the 5 hai single-chip transport mechanism moves as shown in item 14A, and you fff μ MU] The upper single-piece conveying shuttle σ from the upstream side. At the same time, the lower single-piece conveying arm, the spleen and the spleen, the 4th tiger substrate G4', the single-piece handling shuttle KSLl (t ^ 2) 1 Downstream side
[0138J 把剛該單,運機構便與單片處理單元A進行接取,而 / <之上部單片搬運梭*^111卸下的第4泸美柘(^力以 時步驟的第3號基板進行交換;二二。於 5二出基板〜並取而代之地使片: 【0/39】处刖的第4絲板〇4搬入至單片處理單元Α。 201246435[0138J Just after the order, the transport mechanism will pick up the single-chip processing unit A, and / < the upper single-piece transport shuttle * ^ 111 unloaded the fourth 泸 柘 (^ force step 3 of the time step The substrate is exchanged; 22. The substrate is taken out at 5 and replaced by a piece: [0/39] The 4th wire plate 4 at the bottom is moved into the single processing unit 2012 201246435
ItTit °2 =^t:> 〇 ίί 的; 前的第3號基板G3搬入至單片處理單元^處理 =運…入第5號基板 【_] 隨後,該單片搬運機構以圖14B所示之動 ίτί紙1從f游側的下部單片搬運梭脱|卸下第5 片 同時使用上部單片搬運臂啊將第2號基 下 =5’ 部單片搬運梭KSU1(t = t5〜t6)。 ^入至下私側的上 【0141】 接下來’ §亥單片搬運機構再與單片處理 把剛從上游側之下部單片搬運梭叫卸下的第㈤f =妾^而 f此時點已完成前步驟的第4號基板G ;u: 5二與 使用形成清空狀態的上部單片搬運^理此 Α搬出已處理的第4號基板&,並取而代使 臂里前的第5號基板G5搬入至單片處^單下元^早片搬運 接著,該單片搬運機構再與單片處理單元B 7從單片處理單元A搬出的第4號基板&加以 巴 後步驟的第3縣板G3進行交換(t = t7〜w。於此^ ^ί 部單片搬運f紙1從單片處理單元B搬出 j弟3 5虎基板(¾,並取而代之地使用上部單片搬 = ίΪίΙΐ基板〇4搬入至單片處理單元B。被搬出的第3】龍Ϊ: /搬運臂狐1上,等職載在下游側的下部單 基板而到達上部卸料位請(t = t8)。② 41 201246435 為基準週期,而反複進行如上述—連串的基板傳送 [單片搬運機構之傳送形態2] 【0143】 圖Π係顯示適用於如下之情形的第2基 印 片搬運機構承擔__,分別設有單以處理單元 =二例,f兩台(Al、A2)及3台⑻、B2、B3)。在此,單二 、a2以產距時間Ts的時間差,而反複進 ^^ 士 包巧爭處,5里時間)的前步驟之單片處理t另8 早片式處理早τοΒ!、B2、B3以產距時間τ的卑 反複=】需要3Ts之基板停留時間的後步驟之差’而 半^此Λ形,在時點㈣,已結束上述連續之兩種(前步驟及德 =称)早片處理的第1號基板Gi被固持於下部單片搬驗麦 寻,裝載在下游側的下部單片搬運梭KSLi。第2號、 1笛 號基板G2、G3及G4分別停留在執行後步驟的片° ?處以元r 5A號及第6號基w停留單 义Ϊ 7 r 。此時,上游侧的上部單片搬運梭卿載 入第7號基板G?而到達上部卸料位置而。 ^夂叫戰 【0145】 隨後,該單片搬運機構以圖14A所示之動作,祐田μ加β。μ 同部彻節SUi卸下第7絲 =====«1絲_入™則的下 【0146】 把剛ΪΙί側與單片處理單元Αι進行接取,而 與在此時_卸下的第7號基板g7加以 在岡,U成前步驟的第5號基板G5進行交換㈣2〜t3)。 剛從ΪΪ處再與單片處理單元^進行接取,而把 1搬出的第5號基板Gs加以與在此時點剛完 42 201246435 成後步驟的第2號基板G2進行交換(t = t t )。— 的下部單片搬運梭jSLl載入第8號其 =方面,上游側 WL(t = t4)。 土板〇8而到達下部卸料位置 [0148] 隨後,該單片搬運機構以圖14B所示之 搬運臂w從上游側的下部單片搬運梭早片 同,用上部單片搬運臂MUl將第2號基板=’ 部早片搬運梭KSU/tn)。 下射側的上 【0149】 接下來,該單>}搬運機構再與單#處理單 把剛從上游側之下部搬運梭肌一下的第 2進7接取丄而 時點剛完成前步驟的第6號基板〇6進行交換(二y/14 ±•此 【0150】 6 1} 接著,該單片搬運機構再與單片處理單元 剛從單片處理單元、搬出的第6號基板G加 ΐί ίΓ陶搬運f紙1上,等織餘下關的下部單片^ ^ KSLl。另一方面,上游側的上部單片搬運梭jsUi載入第9 而到達上部卸料位置= t8)。其後,也以產距時間 Ts為基準職’而反複進行如上述—連串的基板傳送動作。 [卓片/批次搬運機構之構成] 【0151】 、圖π係顯示單片/批次搬運機構64的構成。又,批次/單片搬 運機構72也具有與單片/批次搬運機構64同樣的構 【0152】 單片/批次搬運機構64具有上下兩段的批次搬運臂及單 片搬運臂叫’該等搬運臂可在方位角方向(θ方向)上旋轉,且可 f鉛直方向(Ζ方向)上升降,還可分別獨立地進行水平之進退或伸 縮移動。更詳言之,單片/批次搬運機構64如圖18所示,於具有 43 201246435 馬卜達•滾珠ΐ桿機構之固定式升降驅動# 186的升降兒 « 19™ &H,ί於搬運本體_、i9ql上,將兩搬運臂^ Μ i Α τ為可分翻立地進退或伸縮移動。在此,批次搬運臂廳 ^Γί將複數片(例如1G片)基板G以可拆卸方H i 方面’單片搬運臂紙】構成為可一次將 G以可拆卸方式載置、簡或固持。 # 1月基板 [0153] 此種構成的單片/批次搬運機構64可斑直周圍所 a =送部58、基板轉送台62、批次式熱處:配4=;片 =0,置台82、84上所載置第2晶圓舟_、咖 '咖, 、及批t搬運梭搬送部66進行接取,且可於各接取對象以 片或10片為單位來進行基板G的授受。 [單片/批次搬運機構之動作] 【0154】 ㈣t J 腿,針對下述動作進行說明:單綠次搬運 =64對於批次式熱處理裝置4〇之第2晶圓舟載置台82上所載 晶圓舟88D、88E、88F中的任一者,一次取出1〇片處2 後的基板Q)〜Gj+9,並取而代之地裝入丨片處理前的基 【0155】 首先,如圖19A之⑻所示,單片/批次搬運機構64於已將兩 搬運臂MU10、ML】拉回至原位置或回返位置的狀態下,令各個搬 運本體19GU、19GL進行升降移動及旋轉移動,以將兩搬運臂 ^U1〇、ML〗抵接在接取對象之第2晶圓舟(未圖示)的前面。此時, 單片搬運臂MLi固持有緊接此前剛從基板轉送台62取下的丨片基 板Gi,而批次搬運臂_1()形成沒有基板G的清空狀態。又,^ s亥清空狀態之批次搬運臂]vnj1()的高度位置對準於接取對象的1〇 個狹縫(未圖示)。 201246435 【0156] 接著’單片/批次搬運機構如圖19A 批次搬運臂]Viu+ 、, (b)所不,令清空狀態的 第2曰圓進或伸展移動至前進位置,而從該接取對象之 f曰曰0舟内之連、_ 1〇個狹縫,將1〇 後之基板㈣9的批次搬運臂=== 【0157】 士此將10片處理後的基板Gj〜Qj+9 —-欠搬屮德,留y / 在此係將固持有處理前之基板Gi的單片搬運臂 應1 ίί:^立置接取對象的L個狹縫(未圖示)。再來,如圖 而將處理早μ搬運f狐1麵或伸祕動至驗位置,ItTit °2 =^t:>〇ίί; The front No. 3 substrate G3 is moved into the single-chip processing unit ^Processing = Transportation... into the No. 5 substrate [_] Subsequently, the monolithic handling mechanism is as shown in Fig. 14B The movement of the paper ίτί paper 1 from the lower side of the f-side transporting shuttle | remove the fifth piece while using the upper single-piece carrying arm, the second base = 5' single-piece handling shuttle KSU1 (t = t5 ~t6). ^上上上上上上 [0141] Next ' § hai single-chip handling mechanism and single-piece processing to just remove the single piece from the upstream side of the shuttle to remove the (5) f = 妾 ^ and f now The No. 4 substrate G of the previous step is completed; u: 5 and the upper single-piece conveyance which is used to form the empty state is carried out, and the processed No. 4 substrate & is removed, and the fifth before the arm is replaced. The substrate G5 is carried into the single sheet, and the single sheet transport mechanism is transported to the fourth substrate & The third county board G3 is exchanged (t = t7~w. Here, the single sheet conveys the f paper 1 from the single processing unit B, and the j brother 3 5 tiger substrate is moved out (3⁄4, and the upper single piece is used instead) = Ϊ Ϊ 搬 搬 搬 搬 搬 搬 搬 搬 t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t t 2 41 201246435 For the reference period, repeat the above-mentioned series of substrate transfer [transfer mode of single-chip transport mechanism 2] [0143] It is shown that the second base printing conveyance mechanism is suitable for the following cases, and is provided with a single processing unit = two cases, two f (Al, A2) and three (8), B2, B3). , single two, a2 with the time difference of the production time Ts, and repeatedly into the ^ ^ 士 巧 巧 , , , , 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 另 另 另 另 另 另 另 另 τ τ τ τ τ The hue repeat of the production time τ =] the difference between the subsequent steps of the substrate retention time of 3Ts is required] and half of the Λ shape, at the time point (4), the above two consecutive (pre-step and German = scale) early processing The first substrate Gi is held by the lower single-piece transfer machine, and the lower single-piece transport shuttle KSLi is mounted on the downstream side. The No. 2 and No. 1 substrates G2, G3 and G4 respectively stay at the sheet of the post-execution step, and the element r 5A and the sixth base w stay in the Ϊ 7 r . At this time, the upper single-piece conveyance shuttle on the upstream side is loaded into the No. 7 substrate G to reach the upper discharge position. ^夂叫战 [0145] Subsequently, the monolithic handling mechanism is operated as shown in Fig. 14A, and Yutian μ is added with β. μ Same part of the SUi to remove the 7th wire =====«1 wire_into the next [0146] The side of the ΪΙ ΪΙ 与 is taken with the single-chip processing unit ,ι, and at this time _ unloading The seventh substrate g7 is exchanged (4) 2 to t3) on the fifth substrate G5 in the previous step of the U. Just after the single-chip processing unit ^ is picked up from the crucible, the No. 5 substrate Gs carried out by 1 is exchanged with the No. 2 substrate G2 which is just after the 42 201246435 step (t = tt). . — The lower single-piece transport shuttle jSLl is loaded with No. 8 its = aspect, upstream side WL (t = t4). The earthboard 8 reaches the lower discharge position [0148] Subsequently, the single-piece transport mechanism transports the shuttle from the lower side of the upstream side with the transport arm w shown in FIG. 14B, and the upper single-piece transport arm MU1 No. 2 substrate = 'partial early transport shuttle KSU/tn). Upper [0149] of the lower shooting side Next, the single >} transporting mechanism and the single # processing single take the second incoming 7 that has just been transported from the lower side of the upstream side, and the point is just completed. The sixth substrate 〇6 is exchanged (two y/14 ±• this [0150] 6 1}. Then, the single-piece transport mechanism and the single-chip processing unit are just loaded from the single-chip processing unit and the sixth substrate G is carried out. Ϊ́ί Γ Γ 搬运 搬运 搬运 f f f f f f f 搬运 搬运 f f f f f f f f f f f f f f f f f f f f f f f f f f f f f f f f f f f f f f f f Thereafter, the series transfer operation as described above is repeated with the production time Ts as the reference position. [Configuration of the piece/batch conveying mechanism] [0151] The figure π shows the configuration of the single piece/batch conveying mechanism 64. Further, the lot/monolithic transport mechanism 72 also has the same configuration as the single/batch transport mechanism 64. [0152] The single/batch transport mechanism 64 has a batch transfer arm and a single transport arm called upper and lower stages. 'The transport arms can be rotated in the azimuthal direction (θ direction) and can be raised and lowered in the vertical direction (Ζ direction), and the horizontal advance or retreat or telescopic movement can be independently performed. More specifically, the single-piece/batch handling mechanism 64 is shown in Fig. 18, and is used in the lift lift «19TM & H, ί of the fixed lifting drive # 186 having the Mabda ball ball mast mechanism of 43 201246435 On the transport body _, i9ql, the two transport arms ^ Μ i Α τ can be moved forward and backward or telescopically. Here, the batch transfer arm hall 将 将 复 复 复 将 ( 例如 ( ( ( ( ( ( ( ( ( ( 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次 批次. # January substrate [0153] The monolithic/batch transport mechanism 64 of such a configuration can be straight around a = the feeding portion 58, the substrate transfer table 62, and the batch type heat: 4 =; The second wafer boat _, the coffee maker, and the batch t transport shuttle transport unit 66 are placed on the 82 and 84, and the substrate G can be carried out in units of sheets or 10 sheets. Grant. [Operation of Monolithic/Batch Handling Mechanism] [0154] (4) The following steps are described for the t J leg: single green delivery = 64 for the second wafer boat mounting table 82 of the batch type heat treatment device 4 Any one of the wafer loading boats 88D, 88E, and 88F, the substrate Q) to Gj+9 after the removal of the 2 wafers at one time, and the substrate before the processing of the cymbal processing is replaced by [0155]. First, as shown in the figure As shown in (8) of 19A, the single-piece/batch transport mechanism 64 moves the transport bodies 19GU and 19GL up and down and rotates in a state where the two transport arms MU10 and ML are pulled back to the home position or the return position. The two transport arms ^U1〇 and ML are abutted on the front side of the second wafer boat (not shown) to be picked up. At this time, the single-piece transfer arm MLi is firmly held by the cymbal substrate Gi immediately removed from the substrate transfer table 62, and the batch transfer arm_1 () is formed in a free state without the substrate G. Further, the height of the batch transfer arm]vnj1() in the empty state is aligned with one slit (not shown) of the object to be picked up. 201246435 [0156] Next, the 'single piece/batch handling mechanism is as shown in Fig. 19A. The carrier arm>Viu+, (b) does not, so that the second round of the empty state is moved or extended to the forward position, and the connection is made. Take the f曰曰0 in the boat, _ 1 狭缝 slit, and the batch transfer arm of the substrate (4) 9 after 1 = === [0157] This will treat 10 substrates Gj~Qj+ 9 —-Unloading the 屮 留 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Then, as shown in the figure, it will handle the handling of the first side of the f fox or the secret to the inspection position.
Gl裝人該狹縫内。錢,如圖19B之_示, 7 1〇^】的單片搬運臂胤1後退或收縮移動至原位置。 在以f,針對下述動作進行說明:單片/批次搬運機構64 某板之=/ί圓舟助為接取對象’而反複進行如上述處理後 t 62(6=31前基板之裝人時,朗圍各部尤妓基板轉送 。【olS 搬運梭搬送部66進行協同配合動作。 臂圖^中,在時點^時’單片/批次搬運機構64的批次搬運 【ίίοΓ搬運臂狐1均形成沒有基板的清空狀態。 棘诘早4搬戰構_ 2)將處輯的絲G4G1放置在基板 佶用Γ卜“的上部載置台62U(t=ta)。此時,單片/批次搬運機構64 $用 =人搬運臂_。從晶圓舟8犯將ω片處理後的基板 ho整批取出來(t==ta〜tb)。 【0161】 • 接著’單片/批次搬運機構6M申出單片搬運臂ML〗來承接上 45 201246435 部載置台62U上的基板G4()1,另一方面令批次搬運臂MU10前進 以將處理後的基板Gj-Gw載入至批次搬運梭66(t = tc)。 【0162】 載入有10片處理後之基板0〗〜0!〇的批次搬運梭66隨後從裝 載位置往卸料位置進行移動(t = te)。又,單片/批次搬運機構64將 單片搬運臂ML】所固持之1片處理前的基板G401裝入至晶圓舟 88D之既定的狹縫(t = te)。 【0163】 隨後’單片搬運機構6〇(圖2)將下一片處理前的基板g402放置 在基板轉送台62的下部載置台62L(t = tf)。另一方面,單片/批次 搬運機構64使用批次搬運臂MU10從晶圓舟88D將下一批1〇片 處理後的基板Gn〜Gm整批取出來(t = tg),然後使用單片搬運臂 ML〗來取下下部載置台62L上的基板G4G2,並且令批次搬運臂 MU丨〇前進以將處理後的基板Gn〜G2〇載入至批次搬運梭% (t = th 〜ti)。 【0164】 如此載入有10片處理後之基板Gn〜G2G的批次搬運梭66隨 後從裝載位置前往卸料位置。另一方面,單片/批次搬運機構64 將單片搬運臂ML〗所固持之處理前的基板g402裝入至晶圓舟88D 之對應的狹縫(t = tj)。 【0165】 其後,也對於晶圓舟88D同時地反複進行與上述同樣的動 作,亦即同時反複地以複數片為單位來取出已處理後的基板,並 以1片為單位來裝入處理前的基板。當該批次取出/單片裝入的複 合動作反複進行10次時,晶圓舟88D中,處理後之基板Gi〜Gi〇〇 會全部(100片)被取出而消失,並成為取而代之地重新收納有1〇 片處理前之基板G4()l〜G410的狀態。 【0166】 、,然後,對於以產距時間TS週期從單片搬運機構6〇經由基板 轉送〇 62(上部載置台62U/下部載置台62L)而搬送來之後續(9〇片) 46 201246435 • 的處理前基板G411〜G%0,單片/批次搬運機構64使用單片搬運臂 ML]加以逐片裝入至晶圓舟88D之對應的各狹縫(亦即只反複進 單片裝入動作)。 [批次式熱處理裝置内之動作] 【0167】 參照圖21A及圖21B,針對批次式熱處理裝置4〇 作的順序進行說明。又,圖21A及圖21B中, 動 應、80C及第2晶圓舟88D、舰、卿分別略記為a、^、 D、E、F 〇 人 【0168】 圖21A之(a)顯示在下述時點之各部的狀態 114内,該晶圓舟所眺之批次處Gl is loaded inside the slit. The money, as shown in Fig. 19B, shows that the single-piece carrying arm 胤1 of the 〇1 is retracted or retracted to the original position. In the case of f, the following operation will be described: the single-chip/batch transport mechanism 64 has a board == 圆 助 助 助 助 接 接 接 接 反复 如 t t t t t t t t t t t t t t t When the person is in the position, the board is transferred to each other. [The olS transport shuttle unit 66 performs the coordinated action. In the arm diagram ^, at the time of the hour, the batch transport of the single/batch transport mechanism 64 [ίίοΓ transport arm fox 1 is formed in a state in which no substrate is emptied. 2 诘 诘 诘 搬 搬 搬 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 The batch handling mechanism 64 $ uses the person to transport the arm _. The substrate ho after the omega chip processing is taken out from the wafer boat 8 (t==ta~tb). [0161] • Next 'single piece/batch The secondary transport mechanism 6M applies the single-piece transport arm ML to receive the substrate G4()1 on the upper portion of the 201246435 partial mount 62U, and on the other hand advances the batch transport arm MU10 to load the processed substrate Gj-Gw to Batch handling shuttle 66 (t = tc) [0162] The batch handling shuttle 66 loaded with 10 processed substrates 0 〜 0 0 随后 is then loaded from the loading position to the discharging position The movement of the line (t = te). Further, the single-piece/batch transport mechanism 64 loads the substrate G401 before the one-piece processing held by the single-piece transfer arm ML into the predetermined slit of the wafer boat 88D (t = [0163] Subsequently, the 'single sheet transport mechanism 6' (FIG. 2) places the substrate g402 before the next processing on the lower stage 62L of the substrate transfer table 62 (t = tf). On the other hand, the single piece / The batch transport mechanism 64 uses the batch transport arm MU10 to take out the next batch of the substrates Gn to Gm processed from the wafer boat 88D in batches (t = tg), and then uses the single-piece transport arm ML to take The substrate G4G2 on the lower stage mounting table 62L is advanced, and the batch transfer arm MU丨〇 is advanced to load the processed substrates Gn to G2〇 into the batch handling shuttle % (t = th ti ti). [0164] The batch handling shuttle 66 loaded with the 10 processed substrates Gn to G2G then goes from the loading position to the discharging position. On the other hand, the single-piece/batch handling mechanism 64 holds the single-piece conveying arm ML. The front substrate g402 is loaded into the corresponding slit (t = tj) of the wafer boat 88D. [0165] Thereafter, the wafer boat 88D is also repeatedly repeated with the wafer boat 88D. In the same operation, the processed substrate is taken out repeatedly in units of a plurality of sheets, and the substrate before the processing is loaded in units of one sheet. When the wafer boat 88D is repeated, all of the processed substrates Gi to Gi will be taken out and disappeared, and the substrate G4 (1) before the processing of the wafer is replaced. ~G410 status. Then, the subsequent (9-inch film) conveyed from the single-piece transport mechanism 6〇 via the substrate transfer cassette 62 (the upper stage 62U/lower stage 62L) in the TS period of the production period TS 201246435 • The front substrate G411 to G%0 are processed, and the single/batch transport mechanism 64 is loaded into the corresponding slits of the wafer boat 88D one by one using the single-piece transport arm ML] (that is, only the single-chip loading is repeated) Into the action). [Operation in Batch Type Heat Treatment Apparatus] [0167] The procedure of the batch type heat treatment apparatus 4 will be described with reference to Figs. 21A and 21B. In addition, in FIG. 21A and FIG. 21B, the response, the 80C, and the second wafer boat 88D, and the ship, respectively, are abbreviated as a, ^, D, E, and F, respectively. [0168] FIG. 21A(a) is shown below. At the time of each part of the time point 114, the batch of the wafer boat
114 ^ 2 0θ3«# 88F HI結束祕猶不久,而且放狀 【0169】 分別 TS為1週期,而每週期地 二片搬運機構⑽產距時間 逐片取出已處理後的基板?订力:3:5=舟,的各狹縫 舟_之各對應的狹缝。,加以裝入至晶圓 從晶圓舟80C依序逐片取出前半H理爐114内的期間’ 對於晶圓舟80B依序逐片努_ ^片)之處理後的基板G,並 【0Π0】 乂則+邛(50片)之處理前的基板G。 台^_,剔舟載置 構64以產距時間τ ;^弟2曰曰固舟卿、88E。單片/批次搬運機 5為1週期’而每週期地從基板轉送台62逐片 47 201246435 取下處理刖的基板G ’並加以裝入至晶圓舟88E之各對鹿 ^晶圓舟在熱處理爐114内的期間,對於晶 S狄將並 應收納之批次處理片數⑽片)的後 = 後接著放人到熱處理爐114,且已 數(100片)之處理前基板G的收納。 錢枇-人處理片 【0171】 ^對於第1晶圓舟8〇A上之基板〇進行的批次 時,升降機構168(圖7)進行作動,而监a閣& 0ΛΛ…、处里、、。束 爐m外。如此一來,五而將晶圓舟δ0Α抽出至熱處理 164取下日日圓二1日日回舟移載機116便從晶圓舟支持臂114 ^ 2 0θ3«# 88F HI end secret is not long, and the release [0169] TS is 1 cycle, and the two pieces of transport mechanism (10) per cycle time to take out the processed substrate piece by piece? : 5 = the slit of each of the slits of the boat. And loading the wafer into the wafer from the wafer boat 80C in order, and sequentially removing the processed substrate G during the period of the first half of the furnace 114, and sequentially processing the wafer boat 80B one by one, and [0Π0 】 乂 邛 + 邛 (50 pieces) before the processing of the substrate G. Taiwan ^_, picking the boat to set the structure 64 to produce time τ; ^ brother 2 曰曰 舟 Zhou Qing, 88E. The single-piece/batch carrier 5 is one cycle' and is periodically removed from the substrate transfer table 62 piece by piece 47 201246435. The processed substrate G' is removed and loaded into the wafer boat 88E. During the heat treatment furnace 114, the number of the batch processed sheets (10) which should be accommodated in the crystal S-di are followed by the heat treatment furnace 114, and the number of (100 sheets) of the pre-process substrate G is Storage.钱枇-人处理片 [0171] ^ For the batch of the substrate 〇 on the first wafer boat 8〇A, the lifting mechanism 168 (Fig. 7) is activated, and the counter is a cabinet & ,,. The beam is outside the furnace. In this way, the wafer boat δ0Α is taken out to the heat treatment 164. The Japanese yen is transferred to the boat on the day of the day.
從第2日at2日日圓舟移載機118將第2晶圓舟88D 168便進行作動,而㈣2 a j舟支持# 164。^後,升降機構 【Ϊΐ72Γ 第 舟88D放入熱處理爐114中。 田第2日日圓舟88D被放入熱處理燐114 晶圓舟88E從晶圓舟載置台夕8:^2)所示般’將 « s6rJ:;:^; " ' — 至於熱處理爐]14的加埶号,i 待言,在進行晶圓舟之取出放二處理的期間内自不 作動,且只要不發生故障間也—直以—定的發熱溫度 成為停止伽陳態早料會在批次;该處理健40運轉中 【0174】 圖_所示之批次取出/單口 = j舟88F,以如圖19A及 次複數片⑼片)地取出已處乍、:而從晶圓㈣F每 便的基板G,亚加以往批次搬運梭 48 201246435 . 搬送部66傳遞。然後,將處理後的基板G往批次式煆婷梦署^ 送出後,只反複進行對晶圓舟娜逐片裝入^理前義 。又,被移至晶圓舟載置台82上的第2晶圓舟8 ‘ 係接者要放入到熱處理爐114的第2晶圓舟,且 片數(100片)份之處理前基板G的裂入。 减批-人處理 【0175】 另一方面’單片搬運機構56於第2晶圓舟_在 114 __ ’也以產距時㈣為工週期,而每週期 動作.從晶圓舟80C的各狹縫逐片取出已處理後的基 ^ :的基板g,加以裴入至晶圓舟80B之各對應 ς 依序逐牌出後半部(5G片)之基板G 曰曰固舟80B依序逐片裝入後半部(5()片)之基板〇。 I耵万、 【0176】 時,ίΞΪίί圓進行的批次式熱處理結束 圓ϋ姓辟此术弟2晶0舟移載機118便從晶 Τ舟支持臂164取下晶圓舟88D,並加 吏3 ^置台86上。絲,取而代之地,第2晶圓;= 1日日圓舟80Β從晶圓舟載置台75移至 ,弟 耕便將第丨晶圓㈣域後’ 當第1晶圓舟臟被放入熱處理爐n 理另一方面’弟1晶圓舟移載機1 晶圓舟80C從晶圓舟載置台76移 g ^(0所,’將 圓舟=】晶嶋置㈣移至^舟^^。75,並且將晶 構:爐114内的期間,⑽ 了間3為1週期’而每週期地進行下述動作:從晶 49 201246435 基板G,加以送出至單片 g,加以裝入至晶圓舟54逐片取下處理前的基板 圓舟依序逐片取出前半部⑼:=後==内=晶 晶圓=】依序逐一部(5“二==鱗於 另方面單片/批次搬運機構64繼續以產距時間% a 1 ^ =週f也進行下述動作:從基板轉送台 各i庳的㈣加以裝入至晶圓舟載置台84上所載置晶圓舟_之 部(5(Γ片)之Θ理形’係對於晶圓舟8吓依序逐片裳入後半 Λ/if处里則的基板G。又,晶圓舟載置台82上的晶圓舟88E 1 處理片數⑽片)之處理前基板G的狀態進行待機。 時,圓舟8GB上之基板0進行的批次式熱處理結束 1^4外、。^ i升降麟168將晶圓舟應取出至熱處理爐 從曰圓舟1捭21B之⑼所示般,第1晶圓舟移載機116 芯tit14 Γ晶圓舟_ ’並加以移至冷卻用的第1 ί第2曰^^ 後,取而代之地,第2晶圓舟移載機118 J ^舟8犯伙晶圓舟載置台82移至晶圓舟支持臂164上。 Ik後,第2晶圓舟88Ε便被放入熱處理焯114中。 【0181】 風 田第2晶圓舟88E被放入熱處理爐114中時,隨即開始對於 該晶圓舟88E所固持之批次處理片數(1〇〇片)的基板G進行熱處 理。如此第2晶圓舟88E在熱處理爐m内的期間,單片/批次搬 運機構64對於晶圓舟載置台84上的晶圓舟88D進行接取,而以 批次取出/單>}裝人的複合動作,從晶圓舟齡每次複數片⑼ 地取出已處理後的基板G ’並加以往批次搬運梭搬送部66傳遞。 然後,將處理後的基板G往批次式煆燒裝置42全部(1〇〇片)送出 後’只反複進行對晶圓舟88F逐片裝入處理前基板G的動作。又., 被移至晶圓舟載置台82上的第2晶圓舟88F係接著要放入到熱處 201246435 圓舟,且已元成批次處理片數(100片)份之處理 曰曰 理爐114的第2 前基板G的裝入。 【0182】 而每週期地進彳亍機構56繼續以產距時間Ts為1週期, 片取送部58 ’並且從基板轉 應的狹縫。於㈣H基板加以裝入至晶圓舟8〇c之各對 Γ、 士 μ、此,月間内,從晶圓舟80A依序逐片取出德丰邱Γ50 片)之處理後的基板G,並對晶 ° ( 片)之處理前的基板G。 ®舟8〇C依序逐片裝入後半部(50 【0183】 時,圓ΪΖ上之基板〇進行的批次式熱處理結束 舟支持_取下晶圓舟 心扯,® 的第晶圓舟載置台86上。然後,取而 縱型批次熱處理爐114中上然後’弟1晶圓舟8GC便被放入 【0184】 哕曰C :0曰被放入熱處理爐114中時’隨即開始對於From the second day at the 2nd day, the day boat transfer machine 118 operates the second wafer boat 88D 168, and (4) 2 a boat supports #164. After that, the lifting mechanism [Ϊΐ72Γ, the boat 88D is placed in the heat treatment furnace 114. On the 2nd day, the Japanese boat 88D was placed in the heat treatment 燐 114 wafer boat 88E from the wafer boat placed on the eve 8:^2) as 'should « s6rJ:;: ^; " ' — as for the heat treatment furnace 14 The nickname, i to be said, does not act during the period of taking out the wafer boat, and as long as there is no fault, the heating temperature becomes a stop. Batch; the processing is in operation 40 [0174] Figure _ shows the batch takeout / single port = j boat 88F, as shown in Figure 19A and the second plurality (9) pieces have been removed, and from the wafer (four) F Each of the substrates G and the conventional batch handling shuttle 48 201246435. The conveying unit 66 transmits. Then, after the processed substrate G is sent to the batch type of 煆婷梦署^, only the wafer narration is performed one by one. Further, the second wafer boat 8' that is moved to the wafer boat mounting table 82 is placed in the second wafer boat of the heat treatment furnace 114, and the number of wafers (100 wafers) before the processing is performed. Cracked into. Subtraction-People Handling [0175] On the other hand, the 'single-chip handling mechanism 56 in the second wafer boat _ at 114 __ ' also takes the production period (four) as the working cycle, and each cycle of operation. From the wafer boat 80C The slits are taken out one by one, and the substrates g of the processed substrates are taken out one by one, and the corresponding substrates are inserted into the wafer boat 80B. The substrate G of the second half (5G sheets) is sequentially ordered. The sheet is loaded into the substrate of the second half (5 () sheet). I耵万, [0176], ΞΪ 耵 ί ί 进行 批次 批次 批次 批次 批次 批次 ϋ 辟 辟 辟 辟 辟 ϋ ϋ ϋ ϋ ϋ ϋ ϋ ϋ ϋ 2 2 2 2 2 2 2 2 2 2 2 2 118 118 118 118 118 118 118 118 118 118吏 3 ^ set on 86. Silk, replaced by the second wafer; = 1 day of the Japanese boat 80 Β moved from the wafer boat mounting platform 75, the younger plough will be after the third wafer (four) domain 'When the first wafer boat is placed in the heat treatment furnace n On the other hand, the younger brother 1 wafer boat transfer machine 1 wafer boat 80C moved from the wafer boat mounting table 76 ^ (0, 'will round the boat = 】 crystal 嶋 set (four) moved to ^ boat ^ ^. 75, and the crystal structure: during the period in the furnace 114, (10) the interval between 3 and 1 cycle', and the following operation is performed every cycle: from the crystal 49 201246435 substrate G, sent to the single piece g, and loaded into the wafer The boat 54 removes the front half of the substrate before and after processing, and removes the first half (9) one by one: ================================================================= The secondary transport mechanism 64 continues to perform the following operations at the production time % a 1 ^ = week f: the wafer carrier is placed on the wafer boat mounting table 84 from the fourth substrate of the substrate transfer table. The part (5 (Γ片)'s 形形形''''''''''''''''''''''''' 1 The number of processed sheets (10) is processed before the state of the substrate G Standby. At the time of the batch heat treatment of the substrate 0 on the 8GB of the boat, the end of the batch heat treatment is completed 1 ^ 4, ^ i lift Lin 168 to take the wafer boat out to the heat treatment furnace as shown in (9) of the round boat 1捭21B , the first wafer boat transfer machine 116 core tit14 Γ wafer boat _ ' and moved to the first ί 2 曰 ^ ^ for cooling, instead, the second wafer boat transfer machine 118 J ^ boat The 8th wafer boat mounting table 82 is moved to the wafer boat support arm 164. After Ik, the second wafer boat 88 is placed in the heat treatment crucible 114. [0181] The second wafer boat 88E of the field is placed When the heat treatment furnace 114 is placed in the heat treatment furnace 114, the substrate G of the number of batch processed sheets (one wafer) held by the wafer boat 88E is heat-treated. Thus, during the period in which the second wafer boat 88E is in the heat treatment furnace m, The single-piece/batch handling mechanism 64 picks up the wafer boat 88D on the wafer boat mounting table 84, and takes the batch take-out/single>} manned composite action, from the wafer age to each multiple film (9) The processed substrate G' is taken out and transferred to the conventional batch transport shuttle unit 66. Then, the processed substrate G is transferred to the batch type calcining apparatus 42 (1〇〇) After the delivery, the operation of loading the front substrate G into the wafer boat 88F is repeated. The second wafer boat 88F moved to the wafer boat mounting table 82 is then placed in the heat. At the 201246435 round boat, and the batch processing (100 pieces) of the batch processing the number of the first front substrate G of the processing furnace 114. [0182] The feeding mechanism 56 continues every cycle. The production time Ts is one cycle, and the wafer picking portion 58' and the slit that is transferred from the substrate are loaded into the wafer board 8's, and the moon is in the month. The wafer boat 80A sequentially takes out the processed substrate G of the wafer of Defeng Qiuqi 50 pieces one by one, and the substrate G before the processing of the crystal (chip). ® Zhou 8〇C is loaded into the second half piece by piece in sequence (50 [0183]], the batch heat treatment of the substrate on the round 〇 ends the boat support _ remove the wafer boat, the first wafer boat The stage 86 is placed on the stage 86. Then, the vertical batch heat treatment furnace 114 is taken up and then the "1st wafer boat 8GC is placed in [0184] 哕曰C: 0曰 is placed in the heat treatment furnace 114" for
t moo G 另方面弟1日日圓舟移載機116如圖21B之fe)所干护,脾 晶圓舟δ〇Α從晶圓舟載置台%移至晶圓= = 且又將ΐ 圓舟,從純舟餘台78移至晶圓聽置台76。 將曰曰 [0185】 構日^在熱處理爐114内的期間,單片搬運機 Π ROR hh S 週期,而每週期地進行下述動作:從晶 ΞίΓΓ ^ 片取出已處理後的基板g,加以送出至單片 且從基板轉送台54逐片取下處理前的基板 加以裝入至aa圓舟80A之各對應的狹缝。於此期間内,從晶 51 201246435 序,取出前半部⑼片)之處理後的基板G,並對於 日日,:】依序逐片裳入前半部(5〇片)之處理前的基板G。 另方面,單片/批次搬運機構64繼續以 其期地進行下述動作:從基板轉送台62逐片 係^曰裝入至晶圓舟88D之各對應的狹縫。於此情形, ^ 依序逐片裝入後半部(5〇片)之處理前的基板G。 上第I j舟8()C上之基板G進行的熱處理結束時,* 上^地’晶圓舟80C被取出至熱處理爐ιΐ4外。如此一來,、 取下曰圓力’第1晶圓舟移細116從晶圓舟支持臂164 g r移至冷卻用的第1晶圓舟載置台%上。 晶圓《署ίϊΛ’第2/曰圓舟移載機118將第2晶圓舟卿從 便被放入縱^欠^里固爐舟持中臂164上。隨後,第2晶圓細 【0188】 兮曰2晶圓舟8纽被放入熱處理爐114中時,隨即開妒對於 ^ G ^ =:===,從晶圓 動作。又f88E逐片裝人處理前基板G的單片裝入 片)份之處理前基板⑽裝入。回舟且已元成批次處理片數(綱 【0189] 而4期機?日56繼續以產距時間μ 1週期, 视進订下述動作.從晶圓舟麵.的各狹縫逐片取出已處 52 201246435 理後的基板G,加以送出至I η伽,窗 .送以封取紗58,並且從基板轉 應的狭縫。狀至晶之各對 片)之處理後的基;出後半部⑼ 片)之處理前的基板G。曰曰圓舟8〇A依序逐片裝入後半部(50 【0190】 其後’同樣反複如圖21A及圖91 p 、 /1 % 入 彻示的動作乃至狀能。Λ圖+ 1B之⑻,He),He) 二」Γ! 上述’對於熱處理爐114交替地放 處理二〇’=,接受單片式工t moo G Another brother on the 1st, the Japanese boat transfer machine 116 is protected as shown in Fig. 21B), the spleen wafer boat δ〇Α is moved from the wafer boat mounting table % to the wafer = = and the boat is again From the pure boat rest 78 to the wafer listening table 76. During the period in which the 曰曰[0185] is placed in the heat treatment furnace 114, the single-piece carrier ΠROR hh S cycle, and the following operations are performed every cycle: the processed substrate g is taken out from the wafer ,, and the processed substrate g is taken The substrate is sent out to the single sheet, and the substrate before the processing is removed from the substrate transfer table 54 one by one and loaded into the respective slits of the aa canoe 80A. During this period, the substrate G after the processing of the first half (9) is taken out from the crystal 51 201246435, and the substrate G before the processing of the first half (5 wafers) is sequentially and sequentially sliced. . On the other hand, the single-chip/batch transport mechanism 64 continues to perform the following operations: the substrate transfer table 62 is loaded into the corresponding slits of the wafer boat 88D piece by piece. In this case, ^ the substrate G before the processing of the second half (5 〇) is sequentially loaded one by one. When the heat treatment by the substrate G on the first boat 8 () C is completed, the wafer carrier 80C is taken out of the heat treatment furnace ΐ4. In this way, the first round boat movement fine 116 is moved from the wafer boat support arm 164 g r to the first wafer boat mounting table % for cooling. The wafer "the ϊΛ ϊΛ 第 2nd / 曰 移 移 118 118 118 118 118 118 118 第 第 第 118 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第Subsequently, the second wafer is fine. [0188] When the wafer bank 8 is placed in the heat treatment furnace 114, it is opened for the operation of ^G ^ =:===. Further, the f88E is loaded one by one to process the substrate (10) of the front substrate G. Returning to the boat and processing the number of batches in Yuancheng (extension [0189] and the 4th machine? Day 56 continues with the production time μ 1 cycle, depending on the following actions. From the slits of the wafer surface. The film is taken out from the substrate G which has been disposed at 52 201246435, and sent to the I η gamma, the window is sent, the sealed yarn 58 is fed, and the processed substrate is transferred from the substrate to the processed substrate. ; the substrate G before the processing of the second half (9). The round boat 8〇A is loaded into the second half piece by piece in sequence (50 [0190]. Then, the same action is repeated as shown in Fig. 21A and Fig. 91 p, /1%. The figure + 1B (8), He), He) Two "Γ! The above - "Alternative treatment of the heat treatment furnace 114" =, accepting the monolithic work
1 80A ' BOB ^ 80C 00 ^ 鮮由m ΓJ (片)基板G的第2晶圓舟88D、88E、 的获轨、Ϊ一者。又’熱處理爐114的加熱器始終以一定 三心…酿忘作動,並且無關乎熱處理爐U4 第1晶圓舟抑或第2晶圓舟,俜##an:Z2sa0舟為 續地反複進行同-製程的m理者。曰曰回舟的更換時間,而連 【0191】 又,本實施形態巾,已使得第丨a圓舟載 6 2 82 . 84.86 ΪΪ3於== 固定方式。例如,也可藉由將第副 的牛i 丁共通化,以省去於其間搬移第1晶圓舟 广 精由將第2晶圓舟載置台82、84的功能進 订共通化’以去於其卩移第2的步驟。又 ^用可動式的晶圓舟載置台’以減少晶圓舟移载機1]6、118^工 作0 [批次式锻燒裝置之動作順序] 【0192】 ' m =煆Ϊ裝置42如上述般’有4台的縱型批次煆燒爐120、 【^】—定的時間差’而反複進行同—醜燒處理。 53 201246435 ^已於批次式熱處理裝置40結束第2次熱處理的基板G,係以 複數片(10片)為單位,經由批次搬運梭搬送部66搬送來至批次式 恨燒裝置42。批次搬運機構68使用批次搬運臂,而直接將 從批次搬運梭搬送部66所卸下的複數片(10片)基板〇加以整批 配到第1〜第4瑕燒爐120、122、124及126中的任一者。 【0194】 更詳言之,批次搬運機構68將所承接之該等複數片(1〇片)基 板G分配到第1煆燒爐12〇時,係將該等複數片(1〇片)基板g二 以整批裝入至第3晶圓舟載置台9〇、92上所載置之第3晶圓舟 94Α、94Β中的任一者。又,分配到第2假燒爐122時,同樣 將該等複數片(10片)基板G加以整批裝入至帛4晶圓舟載置台 96、98上所載置之第4晶圓舟100Α、1〇〇Β中的任一 〇 【0195】 但是,分配到煆燒爐124、126中的任一者時,批次搬運機爐 =字該等複數片(1G片)基板G加以透過批次搬運梭搬送部%而 2”/單片搬運機構72。批次/單片搬運 _送部70卸下該等複數片(㈣)基板G ^ = 二時,係將該等複數片⑽職板G加以集;=f^ ,置台1〇2、刚上所載置之第5晶圓舟1〇6/1〇^第中 者,为配到第4煆燒爐126時,係將該等^ ^ 以整批裝入至第6晶圓舟载置台霞、u片(〇^基板日= 112A、112B中的任-者。 上㈣置之第6晶圓舟 【0196】 如上述之以複數片(10片)為單位 。例如,對於第3晶圓舟刀:==丁 處理片數(i〇0片)的處理後基板G -次全部取出 進行每次_ (1 w)之處理前基板G的搬人 54 201246435 • 交替地進行每次複數片(i〇片)之處理後基板g的取出、及每次複 數片(10片)之處理前基板G的裝入。 【0197】 另一方面次/單片搬運機構72對於例如第5晶圓舟載置台 1〇2上所載置之第5晶圓舟1〇6八裝入批次處理片數(獅片)的基 ,G時,與批次搬運機構68同樣地使用批次搬運臂MUm,而反 複,行以複數片(10片)為單位的整批裝入。但是,從晶圓舟⑽A =出已處理後的基板G日夺’則使用單片搬運臂,來進行逐片的 单片,出,气將所取出的1片基板G送出至單片搬運梭搬送部% 又’已於第1或第2锻燒爐120、122接受般燒處理的基板G, (1G/ )為單位’從批次搬運機構68經由批次搬運梭搬 =單片,亂,,而從已到達批次搬運梭;: 逐片卸下處理娜^ [實施形態之主要作用效果] 【0199】 述,本實制彡態之基域雜置係於搬運線46上或沿著 =運線46,而混雜配置有單片式的處 戈。者 同的 -人式處理政置之間,即便在單 置之間,也能連續而有效率地搬谨—衣直興批-人式處理裝 處理的處理量大幅提高。運基板,错此使得單以批次混載 【0200】 • ,5細搬運編。另-方面 55 201246435 置(例如40、42)之間’透過能與各個批次式處理裝置(4〇、42)進行 接取的兩個批次搬運機構(64、68)以每次複數片地搬運基板G。 【0201】 ^1此情形,上游側的批次式處理裝置(40)透過單片/批次搬運 機構64,而從較其上游側的單片式處理裝置(38)逐片承接住處理 前的基板G ’並且往較其下游側的批次式處理裝置(42)每次 地傳遞出處理後的紐G。又,下齡⑽批次式處理裝置㈣透過 批次搬運機構68,而從較其上游侧的批次式處理部(42)每次複數 片地承接住處理_紐G,纽透過減/單丨搬職構72,而 往較其下游側的單片式處理裝置(44)逐月傳遞出基板G。 【0202】 又,單片式處理裝置(例如36)—>批次式處理裝置(4〇)—單片 ^處理裝置⑽。38)的基板搬運中,搬運線46上的各單片搬運機 構52、56、60無論各承擔區域内所設有處理裝1 80A 'BOB ^ 80C 00 ^ Freshly obtained from the second wafer boat 88D, 88E of the m 片J (slice) substrate G. In addition, the heater of the heat treatment furnace 114 always has a certain three hearts... It is irrelevant to the heat treatment furnace U4, the first wafer boat or the second wafer boat, 俜##an: Z2sa0 boat is repeatedly repeated the same - The process of the process. The replacement time of the boat back, and even [0191] In addition, the towel of this embodiment has made the 丨a round boat carry 6 2 82 . 84.86 ΪΪ 3 in the == fixed mode. For example, it is also possible to commonize the functions of the second wafer boat mounting tables 82 and 84 by omitting the first pair of cows. Move the second step on it. And ^ use the movable wafer boat mounting table 'to reduce the wafer boat transfer machine 1] 6, 118 ^ work 0 [the sequence of the batch type calcining device] [0192] 'm = 煆Ϊ device 42 As described above, there are four vertical batch simmering furnaces 120, [^], and the time difference of '', and the same ugly burning process is repeated. 53 201246435 The substrate G which has been subjected to the second heat treatment in the batch type heat treatment apparatus 40 is transported to the batch hatchery unit 42 via the batch transport shuttle unit 66 in units of a plurality of sheets (10 sheets). The batch transport mechanism 68 uses the batch transport arm, and directly dispenses a plurality of (10) substrates detached from the batch transport shuttle unit 66 into the first to fourth crucibles 120 and 122. Any of 124, 126. [0194] In more detail, when the batch transport mechanism 68 distributes the plurality of (1 〇) substrates G that are received to the first sizzling furnace 12, the plurality of sheets (1 〇) are The substrate g2 is loaded in one batch to any of the third wafer boats 94A and 94B placed on the third wafer decks 9 and 92. Further, when the second sinter furnace 122 is allocated, the plurality of (10) substrates G are collectively loaded into the fourth wafer boat placed on the 晶圆4 wafer rigs 96 and 98. Any one of 100 Α and 1 〇 [0195] However, when it is assigned to any of the crucible furnaces 124 and 126, the batch conveyor furnace = the plurality of sheets (1G sheets) of the substrate G are transmitted through The batch transport shuttle transport unit % and 2"/single transport mechanism 72. When the batch/single transport_feed unit 70 removes the plurality of ((4)) substrates G ^ = 2, the plurality of sheets (10) The occupational board G is set; the =f^, the set 1〇2, the fifth wafer boat that was placed on the first 1/6/1〇^, which is placed on the fourth furnace, will be These ^ ^ are loaded into the sixth wafer boat in the whole batch, and the U-tubes (〇^substrate day = 112A, 112B) are used. The sixth wafer boat [0196] is as described above. For example, for the third wafer knife: == the number of processed wafers (i〇0), the substrate G-time is taken out every time _ (1 w) Handling of the substrate G before processing 54 201246435 • Alternating each time The substrate g is taken out after the processing of the sheet (i), and the substrate G is loaded before the processing of each of the plurality of sheets (10 sheets). [0197] The next/monolithic transport mechanism 72 is, for example, the fifth crystal. The fifth wafer boat mounted on the boat mounting table 1〇2 is loaded into the base of the batch processing number (lion piece), and in the case of G, the batch handling is performed in the same manner as the batch conveying mechanism 68. The arm MUm is repeated, and the whole batch is loaded in a plurality of pieces (10 pieces). However, from the wafer boat (10) A = the processed substrate G is taken away, the single-piece transfer arm is used for The single sheet of the sheet is ejected, and the one substrate G taken out is sent to the single sheet conveying shuttle portion %. The substrate G that has been subjected to the general firing treatment in the first or second calcining furnaces 120 and 122, (1G) /) is the unit 'from the batch transport mechanism 68 via the batch transport shuttle = single piece, chaos, and has arrived at the batch transport shuttle;: unloading the processing piece by piece ^ [the main effect of the embodiment] 0199] The basic domain of the real state is interposed on the transport line 46 or along the = line 46, and the miscellaneous configuration is monolithic. Between the settings, even between the single set, can be continuously and efficiently moved - the clothing directly processing - the processing capacity of the human processing equipment is greatly improved. The substrate is transported, the wrong batch is mixed by batch [0200 】 •, 5 fine handling. Another aspect 55 201246435 between (for example, 40, 42) 'through two batch handling mechanisms that can be accessed with each batch processing device (4〇, 42) (64 68) transporting the substrate G in a plurality of sheets. [0201] ^1 In this case, the upstream batch processing device (40) passes through the single/batch handling mechanism 64, and from the upstream side The sheet processing device (38) receives the substrate G' before the processing piece by piece and transfers the processed button G to the batch processing device (42) on the downstream side thereof. Further, the lower-age (10) batch type processing apparatus (4) passes through the batch transport mechanism 68, and receives the processing_New G from the batch processing unit (42) on the upstream side thereof. The job unit 72 is moved, and the substrate G is transferred monthly to the single-chip processing device (44) on the downstream side. Further, a monolithic processing apparatus (for example, 36) - a batch processing apparatus (4) - a single processing apparatus (10). In the substrate transport of 38), the individual sheet transport mechanisms 52, 56, and 60 on the transport line 46 are provided with processing equipment in each of the commitment areas.
式任-種一律以產距時間Ts的週期,將基板G iff 46上之各部的基板G單腫運係全部以產距 時間Ts為基準週細反複進行’可達成高處理量化的效果。 又 著之基板處理裝置中,令1台批次式熱處理裝 t it 對於已結束單収工作電極賴處理之基 r沾1^、處理〗及對於6結束單片式格子狀配線成膜處理之基板 “,,、、、處理,因此不僅可將熱處理裝置的硬體成本減半,也能顯 =減少絲電力。-般的熱處理裝置由於頻繁地反複加献 目tif里時,在從已冷卻狀態加溫至設定力、口 =系在運轉中使加熱器持續作動,且將加熱器產生=熱== 休止之方式有效·’因此能使電力使用效率大幅 ‘,、、 【0204】 而且,本實施形態之基板處理裝置中,在搬運線46上設有單 片搬運梭搬送部5G、58、74及批次搬運梭搬送部66、7〇。 56 201246435 【0205】 .使:搬交替地 產距時間Ts的週期,將基板G逐 犯他,而以 (52)。於此情形,單片搬運機構48於絝=8)搬運至下游側 SwSLl之任—者停留在裂載錢片搬運梭 可’可以不在意單片搬運機構5 載入基板G即 構52則只要於上部/下部搬運梭^乍=面,'單片搬運機 爾肌的期間卸下基板G即可,任二者停留在卸料位置 狀況。 不在思單片搬運機構48的 【_】 同樣的關係在夾隔著單片搬 ^ 一 白勺單片搬運機構56與單片搬運6之° ,行基板G授受 片搬運機構只要於上部/ 立。上游側的單 裝載位置Hm的_載^^=犯㈣之任-者停留在 構只要於上部/下部的單片搬運機 WU/WL的期間卸下美 =SL】之任一者停留在卸料位置 載入基板Gj的時間^| ° ° ^此,上游側之單片搬運機構 時間點可以-致運機構卸下基板Gi的 【0207】 擔區ί内48、f、56、60、W為了在各個承 升降移動•旋轉移動^專&’/、要進行搬運本體18犯、mL的 個早片搬運機構48、52 的水+私動。因此,各 ,二二::速且有效率地進行基 1片搬送部50、58、74僅使得具有只承载 於單軸的搬運機構進行gj74的部單片搬運梭sul/SLl 逆仃水千麵,_構造及姆極為簡單,產 57 201246435 生粒子的情形也較少。 【0209】 而且,各個單片搬運梭搬送部% 相位’而反複進行具有同一構造 7,、要以逆週期或逆 與下部單片搬運梭SLl的固定性動片搬運梭SUl 停留—回程移動)即可,因此能 ^裝載如留—去程移動〜卸料 而達成低成本化。 運私式(軟體)顯著地簡單化, 【0210】 作全中二=使得單片搬運梭搬送部50、58、74的動 作王相步進仃,错此能於系 / /4的動 步的簡單化•低成本化甚至高生^ @ ㈣(軟體)之進- 【0211】 Μ ° 又,批次搬運梭搬送部66、7〇谁彳 =不卿蝴術之運, ,對於晶圓舟取出放入基板G的料,2,、 產在批次式處理部與單片式處理部之_每3 i片基二 [其他實施形態或變形例] 【0212】 送台形/iff理紅巾,_岐⑽上的基板轉 板轉送△ 26 的基板轉送台2G或卸載機14側的基 【〇ll3】也可將其—部分或全部替換成單片搬運梭搬送部。 基奸ϊΐ 令概之姆機構透测定式基婦送台來進行 基柘,係形成下述順序:基板傳遞側的搬運機構已將 台取if姆料後’基板承接觸搬職構再從基板轉送 把1 Μ Μ 土板。但是,若採用另一種觀點,也是如下之順序:基 搬搬運機構已從基板轉送台取走基板後,基板傳遞側的 側之招=4再將另外的基板載置於基板轉送台。總言之,基板傳遞 之詉運機構將基板載置於基板轉送台的動作、與基板承接侧之 58 201246435 搬運機構從基板轉送台取走基板的動作係不能同時實行。兩搬運 機構雖然分別獨立地進行固有的搬運工作,但是在兩邊之間進行 基^的授受時’還是必須確認基板轉送台的清空狀況,依當時情 形還必須進行中斷控制。因此,不僅導致搬運效率的下降,也會 造成搬運機構之控制程式(軟體)龐大化且高成本。藉由將基板轉送 台替換成單片搬運梭搬送部,能促進搬運程式的簡單化•低成本 化。 【0214】 作為上述實施形態之基板處理裝置的延伸,例如圖22所示 般,也可建構出整合有使用於染料敏化太陽能電池(圖23)製造過 程之所有處理單元的處理系統。 【0215】 此處理系統中,如上述實施形態般,以第丨處理站1〇製作出 透明基板308側的第1疊層組件(3〇8/3〇〇/3〇4/312),並且以第2處 理站200製作出對向基板31〇側的第2疊層組件 (310/305/302/318),再於貼合單元2〇2使得第丨疊層組件 (蕭綱削·2)與第2疊層组件(肅蕭如洲 人。 【0216】 、口 在此’對於第1處理站1〇 ’與上述實施形態同樣地以產距時 間ts+的週期,而從裝載機12將形成有透明電極3〇〇被圖案化前 之覆蓋層透明導電層的透明基板遞作為未處理的基板G加以投 入。另一方面,對於第2處理站2〇〇,以產距時間Ts的週期,而 從裝載機2〇4將形成有基電極3〇5被圖案化前之 電 如FTO)的對向絲31G作為未處理的基㈣加以投入日。 =有麵錢12同獅構纽魏,且包含有細幾^運 59 【0217】 201246435 【0218】 在與裝賴204接鄰之上游側的^ ^ 1台或複數台的單片式清洗單元、及土中^ 2,:配備有 案化單元210。各單片式清洗單元細^^口的 理面逐片清洗的裝置構成,而各單 將基板Η之待處 成係用來將基板G之待處理面上⑽的裝置構 化而形成基電極305。 的透明導電層加以逐片進行圖案 【0219】 片丄 工複數台的單 y單元212、批次式熱處理裝置2M及批配g 以在基板G之待處理面上例如印刷塗佈, 極)302。單片式格對向電極導電層(相對電 線314及㈣胺⑽H ί處上逐片重豐成膜出格子狀配 次處; i=:r烤後之編的待處理面 【0220】 的搬内’設有縱貫或巡迴於各區塊纖、誦中 的搬,線218,用來依處理流程順序進行基板G的搬運。 L. J. 1 她拔t游側的單片集中區塊·Α,基板轉送台220、單片搬運 π及皁片搬運梭搬送部224沿著系統長邊方向(χ方向)配置 丄’而構成搬運線218的一個區間,且在單片搬運機構您 210%^配置有單片式清洗單元2〇8及單片式圖案化單元 邮罢。„/批次混載區塊2_的内部,雖省略圖示出詳細的 配置,但疋其與圖2實質上相同。 201246435 【0222】 於第2處理站200,基板Η —面順著搬運線218下來,一面 依序接受一連串的單片處理或批次處理。然後,已成為第2疊層 組件(310/305/302/314)之已處理的基板Η會以產距時間Ts的週 期,而被貼合單元202的搬運機構228從單片搬運梭搬送部220 的卸料位置(WU/WL)取下來。 [0223] ^ 一方面,於第1處理站10則如上述實施形態般,基板G 一 面順著搬運線46下來,-面依序接受一連串的單片處理或批次處 理。然後,已成為第1疊層組件(3〇8/3〇〇/3〇4/312)之已處理的基板 =會以產距時間ts的週期,而被貼合單元202的搬運機構228從 單片搬運梭搬送部45的卸料位置取下來。 【0224】 Ϊ合^元202使用例如黏接劑來貼合:從第1處理站10所引 入,第1,層組件(308/300/304/312)、與從第2處理站200所引入 的第2宜層組件(310/305/302/314),而形成一體性的疊層組件 (308/300/304/312/302/305/310/314)。 【0225】 、接著,該—體化的疊層組件(3〇8/3〇〇/3〇4/312/302/305/310/314) 被搬予至下一段的電解液注入單元23〇,並於該單元23〇内,在一 體化唛層組件中,詳言之為多孔質半導體微粒子層3〇4與對向電 極302之間注入電解液。 ^ 【0226】 最後^於下一段的密封單元232,對一體化疊層組件施加密封 ΓΓ1)以使彳ί電解液不外漏,而得到最終製品即®23的染料敏化太 陽能電池模組G/H。然後,該染料敏化太陽能電池模組G/H便從 卸載機14以晶圓匣盒Cs為單位而被移出。 [0227] 又,於貼合單元2〇2、電解液注入單元23〇與密封單元232 之間不使用本發明中之單片搬運機構及搬運梭搬送部,而利用 61 201246435 至一 以往公知或周知的搬運機構(未圖示)’將基板或各疊層組件乃 體化疊層組件基板G/Η加以逐片搬運。 【0228】 就另外的變形例而言,依系統的規格,也可使得單片搬運梭 搬送部以獨立或非同步方式進行上部搬運梭的往復動作(裝載•前 進移動·卸料•回返移動)、與下部搬運梭的往復動作(裝載· ^_ 移動.卸料•回返移動)。 ' 刚 【0229】 上述實施形態的批次式熱處理裝置40包含有單片/批次搬 機構64,用來將基板〇每次複數片地搬送至該熱處理裝置 ,段^批次式煆燒裝置42。但是,在批次式熱處理裝置4〇 设,早片處理裝置的情形,只要將單片/批次搬運機構6 J 述f片搬運機構56同樣的單片搬運機構,而料成It欠 ΐϊίϊΐ:;將基板㈣㈣送至織處理裝置 【0230】 ㈣ί樣地’在批次式熱處理裝置40之前段設有批次式處理梦晋 單片搬運機構%替換為與例如上述批二^單片ίί 枝構72同樣的批次/單片搬運機 早月搬運 處理褒置40之前段的批次式處=從該熱 整批搬入至晶厠喜,*…曰二1衣置母人稷數片地承接基板,而 熱處理的基板逐批t式熱處理農置40完成 片式袼子狀配線成膜單元38)。、後段的早片式處理裝置(例如單 【產業上利用性】 【0231】 ,元與批次述形,般地混,單蝴理 統内所有之處理單元輩η :疋二也可將本發明適用於如系 統内所有之處理單理單元的線上系統、或者如系 處理早70依處理流程順序大致沿横向 62 201246435 並列7=g f之任意系統的一部分或整體應用於本發明。 制二Ϊ田明不限於如上述實施形態之染料敏化太陽能電池 理裝置,也可適例㈣來製造半導體元 件或FPD的基板處理裝置。 【圖式簡單說明】 【0026】 配置示本發明之一實施形態的基板處理裝置在系統上之 成的顯示上述基板處理裝置中之單緣次混載區塊内之構 理單H 地顯示在上述基域理裝置所組裝之單片式處 理單H 地顯示在上述基板處_置所組裝之單片式處 部的=係顯示於第1類型單片式處理單絲出放人基板時之各 部的^子係属㈣、第2類型單片式處理單元取出放人基板時之各 内娜處理裝置 裝™處理裝置 的批+顺㈣③式假燒裝置内 的批:^ 谦燒裝置内 圖9麵社祕祕縣置巾之料搬難搬送部之構成 63 201246435 的立體圖。 送部處理裝置中之批次搬運梭搬 體圖圖11係顯不上述基板處理I置中之單片搬運機構之構成的立 iff片搬運機構之移動範圍的俯視圖。 側上係^示上料㈣運機翻軸行從上游 梭之動===力作、及將基板載人至下游侧下部搬運 側下係齡上述料搬運機_時進行從上游 圖15A⑻〜15A(c)、l5B(d)〜15B_顯示上述單片搬 j進行從上游側下部搬運梭卸下基板之動作、及將基板載入至 下游側上部搬運梭之動作時的各階段。 圖16係顯示上述單片搬運機構在第H#送形態之一連 廷動作順序。 圖17係顯示上述單片搬運機構在第2傳送形態之一連串的 运動作順序。 成的係顯示上述基板處理裝置中之單片/批次搬運機構之構 n圖19蝴〜19A(C)、聰⑹〜應⑺係顯示上述單片/批次搬運 、冓連續進行以複數片為單位之基板取出及以q片為單位之基板 及入時的動作。 圖20係顯示上述單片/批次搬運機構在反複進行處理後基板 夂取出及處理前基板之裝入時與周圍各部進行協同配合動作 例。 圖21A(a)〜21A(c)、21B⑷〜21B(f)係用來說明上述批次式熱 64 201246435 處理裝置内之動作的大致俯視圖。 圖22係顯示將染料敏化太陽能電池(圖23)製造迟和 驟加以整合*實_處理祕之配置的俯 私之全部步 圖23係顯示染料敏化太陽能電池之基本構造的縱剖面圖。 【主要元件符號說明】 【0233】 10〜第1處理站 l〇A、l〇c〜單片集中區塊 10B〜單片/批次混載區塊 12〜裝載機 14〜卸載機 16〜晶圓匣盒平台 18〜装載機搬運機構 18a〜本體 18b〜搬運臂 20、26〜基板轉送台 20U、26U〜上部載置台 20L、26L〜下部載置台 22〜晶圓匣盒平台 24〜卸載機搬運機構 24a〜本體 24b〜搬運臂 32〜單片式清洗單元 34〜單片式圖案化單元 36、2J1〜單片式工作電極成膜單元 38〜单片式格子狀配線成膜單元 40〜批次式熱處理裝置 42〜批次式煆燒裝置 44〜單片式染料吸附單元 65 201246435 45、50、58、74〜單片搬運梭搬送部 46〜搬運線 48、52、56、60〜單片搬運機構 54、62〜基板轉送台 54U、62U〜上部載置台 54L、62L〜下部載置台 64〜單片/批次搬運機構 66、70〜批次搬運梭搬送部 68〜批次搬運機構 72〜批次/單片搬運機構 75、76、78〜第1晶圓舟載置台 80A、80B、80C(圖21中略記為A、B、C)〜第1晶圓舟 82、84、86〜第2晶圓舟載置台 88D、88E、88F(圖21中略記為D、E、F)〜第2晶圓舟 90、92〜第3晶圓舟載置台 94A、94B〜第3晶圓舟 96、98〜第4晶圓舟載置台 100A、100B〜第4晶圓舟 102、104〜第5晶圓舟載置台 106A、106B〜第5晶圓舟 108、110〜第6晶圓舟載置台 112A、112B〜第6晶圓舟 114〜縱型批次熱處理爐 116、118〜第1、第2晶圓舟移載機 120、122、124、126〜第1 —第4縱型批次煆燒爐 128、130、132、134〜第3—第6晶圓舟移載機 136〜單片搬運機構 140、146〜處理室(腔室) 142〜平台 144、152〜喷頭 66 201246435 145、155〜基板出入口 * 148〜旋轉驅動部 150〜旋轉夾盤 154、156〜升降銷 158、164〜晶圓舟支持臂 160、166〜保溫筒 162、168〜升降機構 170〜上部搬運路線 172〜下部搬運路線 174〜托架 176〜固持部 178〜升降銷 180、186〜升降驅動部 182、188〜升降驅動軸 184U、190U〜上部搬運本體 184L、190L〜下部搬運本體 200〜第2處理站 200A〜單片集中區塊 200B〜單片/批次混載區塊 202〜貼合單元 204〜裝載機 206〜裝載機搬運機構 208〜單片式清洗單元 210〜單片式圖案化單元 212〜單片式格子狀配線成膜單元 214〜批次式熱處理裝置 216〜批次式煆燒裝置 218〜搬運線 220〜基板轉送台 222〜單片搬運機構In the cycle of the production time Ts, the single G-swelling system of each of the substrates G on the substrate G iff 46 is repeatedly repeated with the production time Ts as a reference, and the effect of high processing quantization can be achieved. In the substrate processing apparatus, one batch type heat treatment package t is applied to the base of the completed single-receiving electrode electrode treatment, and the film formation process for the single-chip grid wiring is completed for 6 Since the substrate is processed by ",,,,,, the hardware cost of the heat treatment device can be reduced by half, and the wire power can be reduced. The heat treatment device is cooled after being repeatedly added to the tif. The state is heated to the set force and the port = the heater is continuously operated during the operation, and the heater is generated = heat == the mode of rest is effective. 'Therefore, the power use efficiency is greatly improved," [0204] In the substrate processing apparatus of the present embodiment, the single-sheet transport shuttle transport units 5G, 58, 74 and the mass transport shuttle transport units 66 and 7 are provided on the transport line 46. 56 201246435 [0205] From the period of time Ts, the substrate G is smashed to him, and (52). In this case, the single-piece transport mechanism 48 is transported to the downstream side SwSLl at 绔=8). Can 'don't care about the monolithic handling mechanism 5 loading the substrate G In other words, the structure 52 is only required to be removed from the upper/lower part of the shuttle, and the substrate G can be removed during the single-body transport of the muscles, and both of them remain in the unloading position. [_] In the same relationship, the single-sheet transport mechanism 56 and the single-piece transport 6 are separated by a single piece, and the row substrate G-receiving sheet transport mechanism is located at the upper/right side. The single-loading position Hm on the upstream side. _ _ ^ ^ = (4) 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任 任Time ^| ° ° ^ This, the single-chip handling mechanism at the upstream side can be used at the time - the transport mechanism removes the substrate Gi [0207] The load zone ί, 48, f, 56, 60, W in order to move in each load Rotate the movement ^Special & '/, to carry the water + private movement of the early transport mechanisms 48, 52 of the transport body 18, mL. Therefore, each of the two: two: fast and efficient base transfer The parts 50, 58, and 74 only have a single-piece conveying shuttle sul/SLl having a gj74 carried by a single-axis conveying mechanism, _Structural and extremely simple, the production of 57 201246435 raw particles is also less. [0209] Moreover, each single-piece transport shuttle transport part % phase 'and repeat the same structure 7, to reverse cycle or reverse and lower The fixed-moving movable transporting shuttle SL1 of the single-piece transporting shuttle SL1 can be stopped-returned, so that it can be loaded, such as stay-to-go move-unloading, and the cost can be reduced. The transport-type (software) is significantly simplified. [0210] For the whole middle two, the operation of the single-piece transport shuttle transport units 50, 58, and 74 is stepped on, and the simplification of the motion of the system//4 can be simplified. @ (4) (Software) advance - [0211] Μ ° In addition, the batch transport shuttle transport unit 66, 7 〇 彳 不 不 不 不 不 不 不 不 不 不 不 不 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆Manufactured in the batch processing unit and the single-chip processing unit _ every 3 i base 2 [Other embodiment or modification] [0212] Sending table-shaped/iff-red towel, _岐 (10) on the substrate transfer The substrate transfer table 2G of △ 26 or the base [〇ll3] of the unloader 14 side can also be partially or completely replaced with a single The sheet transports the transport unit. The genius ϊΐ 令 令 令 令 令 令 令 令 令 令 令 令 令 令 令 令 令 令 概 概 概 概 概 概 概 概 概 概 概 概 概 概 概 概 概 概 概 概 概 概 概 概 概 概 概 概 概Transfer the 1 Μ Μ soil board. However, another point of view is as follows: after the substrate transporting mechanism has taken the substrate from the substrate transfer table, the side of the substrate transfer side is 4 and the other substrate is placed on the substrate transfer table. In short, the operation of the substrate transporting mechanism for placing the substrate on the substrate transfer table and the substrate receiving side are not simultaneously performed by the transfer mechanism from the substrate transfer table. Although the two transport mechanisms independently carry out the intrinsic transport work independently, it is necessary to confirm the emptying of the substrate transfer table when the base is being exchanged between the two sides, and the interrupt control must be performed depending on the situation. Therefore, not only the transportation efficiency is lowered, but also the control program (software) of the transport mechanism is large and expensive. By replacing the substrate transfer table with a single-piece transport shuttle transport unit, it is possible to simplify the simplification and cost reduction of the transport program. As an extension of the substrate processing apparatus of the above-described embodiment, as shown in Fig. 22, for example, a processing system in which all the processing units used in the manufacturing process of the dye-sensitized solar cell (Fig. 23) are integrated can be constructed. [0215] In the processing system, as in the above embodiment, the first stacking unit (3〇8/3〇〇/3〇4/312) on the side of the transparent substrate 308 is produced by the second processing station 1〇, and The second stacking unit (310/305/302/318) on the side of the counter substrate 31 is produced by the second processing station 200, and the second stacking unit is formed by the bonding unit 2〇2 (Xiao Gangji·2) And the second laminated component (Su Xiaorui. [0216], the mouth is the same as the above-described embodiment in the same manner as in the above embodiment, and the loader 12 is formed from the loader 12 The transparent electrode 3 is placed on the transparent substrate of the cover transparent conductive layer before being patterned as an unprocessed substrate G. On the other hand, for the second processing station 2, the cycle of the production time Ts is The counter wire 31G on which the base electrode 3〇5 is patterned (such as FTO) is formed as an untreated base (4) from the loader 2〇4. = There is a face money 12 with the lion structure New Wei, and contains a few fines ^ Yun 59 [0217] 201246435 [0218] On the upstream side of the stagnation 204, ^ ^ 1 or a plurality of single-chip cleaning units And the soil ^ 2,: equipped with a case unit 210. Each of the single-chip cleaning units is configured to clean the surface of the substrate, and each substrate is used to form a substrate for forming a substrate on the surface to be processed (10) of the substrate G to form a base electrode. 305. The transparent conductive layer is patterned one by one. [0219] The single y unit 212, the batch type heat treatment device 2M, and the batch g are completed to be printed on the surface to be processed of the substrate G, for example, a coating 302 . The monolithic lattice counter electrode conductive layer (relative to the wire 314 and (4) amine (10) H ί on the piece by piece of film into a lattice-like distribution; i =: r after baking the to-be-processed surface [0220] Inside, there is a moving or line 218 that runs through or in each block, and is used to carry the substrate G in the order of the processing flow. LJ 1 She pulls the monolithic block in the side of the tour. The substrate transfer table 220, the single-piece transport π, and the soap sheet transport shuttle transport unit 224 are disposed along the longitudinal direction of the system (χ direction) to form one section of the transport line 218, and are disposed 210% in the single-piece transport mechanism. There is a one-piece cleaning unit 2〇8 and a one-piece patterning unit. The inside of the batch-mixing block 2_, although the detailed arrangement is omitted, is substantially the same as FIG. 201246435 [0222] At the second processing station 200, the substrate Η face down along the transfer line 218, and sequentially receives a series of single-piece processing or batch processing. Then, it becomes the second stacked assembly (310/305/ The processed substrate 302 of 302/314) will be in the period of the production time Ts, and the handling mechanism 228 of the bonding unit 202 will be The discharge position (WU/WL) of the transport shuttle transport unit 220 is removed. [0223] On the one hand, in the first processing station 10, as in the above embodiment, the substrate G is carried down along the transport line 46. The sequence accepts a series of single-piece processing or batch processing. Then, the processed substrate that has become the first stacked component (3〇8/3〇〇/3〇4/312) = the period of the production time ts The transport mechanism 228 of the bonded unit 202 is taken out from the unloading position of the single-piece transport shuttle unit 45. [0224] The composite unit 202 is bonded using, for example, an adhesive: from the first processing station 10 Introducing a first layer assembly (308/300/304/312) and a second layer assembly (310/305/302/314) introduced from the second processing station 200 to form a unitary laminated assembly (308/300/304/312/302/305/310/314) [0225], and then, the laminated assembly (3〇8/3〇〇/3〇4/312/302/305) /310/314) is moved to the electrolyte injection unit 23〇 of the next stage, and in the unit 23〇, in the integrated tantalum layer assembly, in detail, the porous semiconductor fine particle layer 3〇4 and the opposite direction An electrolyte is injected between the electrodes 302. ^ 0226] Finally, the sealing unit 232 of the next stage applies a sealing ΓΓ1) to the integrated laminate assembly so that the 电解液ί electrolyte does not leak, and the dye sensitized solar cell module G/H of the final product, ie, 23, is obtained. Then, the dye-sensitized solar cell module G/H is removed from the unloader 14 in units of the wafer cassette Cs. [0227] Further, in the bonding unit 2〇2, the electrolyte injection unit 23〇 The single-piece conveying mechanism and the conveying shuttle conveying portion of the present invention are not used between the sealing unit 232, and the substrate or the respective laminated assembly is used by a conventionally known or well-known conveying mechanism (not shown) from 61 201246435. The laminated component substrate G/Η is transported piece by piece. [0228] In another modification, the single-piece transport shuttle transport unit can perform the reciprocating motion of the upper transport shuttle in an independent or asynchronous manner depending on the system specifications (loading, forward movement, unloading, and return movement). Reciprocating motion with the lower transport shuttle (loading · ^_ moving, unloading, returning movement). '[B229] The batch type heat treatment apparatus 40 of the above embodiment includes a single piece/batch moving mechanism 64 for conveying the substrate 〇 to the heat treatment apparatus at a plurality of sheets, and the batch type simmering apparatus 42. However, in the case of the batch type heat treatment apparatus 4, in the case of the early sheet processing apparatus, the single sheet/batch conveying mechanism 6 J is described as the same single sheet conveying mechanism of the sheet conveying mechanism 56, and it is expected that it is owed by the following: The substrate (4) (4) is sent to the weaving processing device [0230] (4) 样 地 'In the preceding stage of the batch type heat treatment device 40, there is a batch processing of the Mengjin single-chip handling mechanism% replaced with, for example, the above-mentioned batch 2 ^ 片 ίί The same batch/single-piece conveyor of the same structure 72 is used to carry out the batch type of the previous section of the processing unit 40. From the heat batch to the crystal toilet, *...曰二一衣置母稷稷片The substrate is subjected to the substrate, and the heat-treated substrate is subjected to batch-type t-type heat treatment of the agricultural substrate 40 to complete the chip-type braid-shaped wiring film forming unit 38). Early processing device in the latter stage (for example, single [industrial use] [0231], the meta and the batch are described in a general manner, and all the processing units in the single butterfly system are η: The invention is applicable to an on-line system such as all processing unit units in the system, or to a part or whole of any system in which the processing sequence is substantially along the horizontal direction 62 201246435 juxtaposed 7 = gf. The present invention is not limited to the dye-sensitized solar cell device of the above embodiment, and the substrate processing apparatus for manufacturing a semiconductor element or an FPD can be manufactured by the fourth embodiment. [Simple Description of the Drawings] [0026] Embodiment of the present invention is shown. The substrate processing apparatus is displayed on the system to display the processing sheet H in the single-edge sub-mixing block in the substrate processing apparatus, and is displayed on the single-chip processing unit H assembled by the basic processing apparatus. The substrate at the substrate is displayed in the unit type of the first type of single-chip processing monofilament, and the second type of single-chip processing unit is taken out. Batches in the batch + cis (four) 3 type smoldering device of the TM processing device for the human substrate at the time of the human substrate: ^ The composition of the smashing device in the smashing device Fig. 11 is a plan view showing the movement range of the vertical 464 transport mechanism in which the single-piece transport mechanism is not disposed in the substrate processing I. Show the feeding (4) The movement of the conveyor shaft from the upstream shuttle === force, and the substrate is carried to the downstream side of the lower side of the transport side of the lower age of the material handler _ from the upstream Figure 15A (8) ~ 15A (c), L5B(d) to 15B_ show the steps of the operation of removing the substrate from the upstream lower transfer shuttle and the operation of loading the substrate to the downstream upper transfer shuttle. Fig. 16 shows the above-mentioned single The sheet transporting mechanism is in the order of one of the first H1 transport modes. Fig. 17 is a view showing the sequence of motions of the single transport mechanism in the second transport mode. The system displays the single/batch in the substrate processing apparatus. The structure of the secondary transport mechanism n Figure 19 Butterfly ~ 19A (C), Cong (6) to (7) show that the above-mentioned single-piece/batch handling, 冓 continuous substrate removal in units of a plurality of sheets, and substrate and unit operation in units of q-pieces. Fig. 20 shows the above-mentioned single piece/batch The transport mechanism cooperates with the surrounding parts when the substrate is taken out and the substrate is loaded before the processing is repeated. Fig. 21A(a) to 21A(c) and 21B(4) to 21B(f) are used to explain the above batch. Sub-heat 64 201246435 Approximate top view of the operation in the processing device. Figure 22 is a diagram showing the steps of the integration of the dye-sensitized solar cell (Fig. 23) manufacturing delay and integration. A longitudinal sectional view showing the basic configuration of the dye-sensitized solar cell. [Description of main component symbols] [0233] 10 to 1st processing station l〇A, l〇c to monolithic concentrated block 10B to monolithic/batch mixed block 12 to loader 14 to unloader 16 to wafer平台 cassette platform 18 to loader transport mechanism 18a to main body 18b to transport arm 20, 26 to substrate transfer table 20U, 26U to upper stage 20L, 26L to lower stage 22 to wafer cassette platform 24 to unloader Mechanism 24a to body 24b to transport arm 32 to monolithic cleaning unit 34 to monolithic patterning unit 36, 2J1 to monolithic working electrode film forming unit 38 to monolithic grid wiring forming unit 40 to batch Heat treatment device 42 to batch type calcining device 44 to monolithic dye adsorption unit 65 201246435 45, 50, 58, 74 to single-piece conveying shuttle conveying unit 46 to conveying line 48, 52, 56, 60 to single-piece conveying Mechanisms 54, 62 to substrate transfer tables 54U and 62U to upper mounts 54L and 62L to lower mount 64 to single/batch transport mechanisms 66 and 70 to batch transport shuttle transport unit 68 to batch transport mechanism 72 to batch Secondary/single sheet transport mechanisms 75, 76, 78 to first wafer boat mounts 80A, 80B, and 8 0C (abbreviated as A, B, and C in FIG. 21) - first wafer boat 82, 84, 86 to second wafer boat mounting table 88D, 88E, and 88F (abbreviated as D, E, and F in FIG. 21). The second wafer boat 90, 92 to the third wafer boat mounting table 94A, 94B to the third wafer boat 96, 98 to the fourth wafer boat mounting table 100A, 100B to the fourth wafer boat 102, 104 to 5 wafer boat mounting tables 106A and 106B to fifth wafer boats 108 and 110 to sixth wafer boat mounting tables 112A and 112B to sixth wafer boat 114 to vertical batch heat treatment furnaces 116 and 118 to 1 The second wafer boat transfer machine 120, 122, 124, 126 to the first to fourth vertical batch batch furnaces 128, 130, 132, 134 to the third to the sixth wafer boat transfer machine 136 to single Sheet conveying mechanism 140, 146 to processing chamber (chamber) 142 to platform 144, 152 to head 66 201246435 145, 155 to substrate inlet and outlet * 148 to rotary driving portion 150 to rotating chuck 154, 156 to lifting pin 158, 164 ~ Wafer boat support arms 160, 166 ~ Insulation cylinders 162, 168 ~ Elevating mechanism 170 - Upper conveyance path 172 - Lower conveyance path 174 - Bracket 176 - Retaining portion 178 - Lifting pins 180, 186 - Elevating drive units 182, 188 ~ Lifting drive shaft 18 4U, 190U to upper transport main body 184L, 190L to lower transport main body 200 to second processing station 200A to monolithic concentrated block 200B to single/batch mixed block 202 to laminating unit 204 to loader 206 to loader Transport mechanism 208 to monolithic cleaning unit 210 to monolithic patterning unit 212 to monolithic grid wiring forming unit 214 to batch type heat treatment device 216 to batch type calcining device 218 to transfer line 220 to substrate Transfer station 222 to monolithic transport mechanism
S 67 201246435 224、226〜單片搬運梭搬送部 228〜搬運機構 230〜電解液注入單元 232〜密封單元 300〜透明電極 302〜對向電極(對向電極導電層) 304〜半導體微粒子層(工作電極) 305〜基電極 306〜電解質層 308〜透明基板 310〜對向基板 312、314〜格子狀配線 316、318〜絕緣膜(保護膜) A、A,、A2、B、B〗、B2、B3〜單片式處理單元 C、CA、CB、cs〜晶圓匣盒 FU〜上部裝載位置 FL〜下部裝載位置 G、Gi、Gj—Gj+9、Gi —Gi〇〇 ' G401 —G410、H〜基板 MU!〜上部搬運臂 MU〜下部搬運臂 JSUi〜上游側的上部單搬運梭 JSL!〜上游側的下部單片搬運梭 KSLh〜下游侧的上部單片搬運梭 KSL·,〜下游侧的下部單片搬運梭 MU!、ML,〜單片搬運臂 MU1Q、MA1Q〜批次搬運臂 SU,〜上部單片搬運梭 SL!〜下部單片搬運梭 SU10〜上部批次搬運梭 SL1()〜下部批次搬運梭 68 201246435 t〇—ts、ta〜tj〜時點 WIJ〜上部卸料位置 WL〜下部卸料位置 69S 67 201246435 224, 226 to single-piece transport shuttle transport unit 228 to transport mechanism 230 to electrolyte injection unit 232 to seal unit 300 to transparent electrode 302 to counter electrode (opposite electrode conductive layer) 304 to semiconductor fine particle layer (work Electrode) 305 to base electrode 306 to electrolyte layer 308 to transparent substrate 310 to opposite substrate 312, 314 to grid-like wiring 316, 318 to insulating film (protective film) A, A, A2, B, B, B2 B3~monolithic processing unit C, CA, CB, cs~ wafer cassette FU~ upper loading position FL~ lower loading position G, Gi, Gj_Gj+9, Gi_Gi〇〇' G401 — G410, H ~ Substrate MU! ~ Upper transport arm MU ~ Lower transport arm JSUi - Upper single transport shuttle JSL from the upstream side - Lower single transport shuttle KSLh on the upstream side - Upper single transport shuttle KSL · on the downstream side - Downstream side Lower single-piece transport shuttle MU!, ML, ~ Monolithic transport arm MU1Q, MA1Q ~ Batch transport arm SU, ~ Upper single transport shuttle SL! ~ Lower single transport shuttle SU10 ~ Upper batch transport shuttle SL1 () ~ Lower batch handling shuttle 68 201246435 t〇-ts, ta~tj~ time point WIJ~ upper unloading Location WL~ the lower discharge position 69
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JP2011004968A JP5735809B2 (en) | 2011-01-13 | 2011-01-13 | Substrate processing equipment |
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WO (1) | WO2012096144A1 (en) |
Cited By (2)
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CN110783166A (en) * | 2018-07-25 | 2020-02-11 | 株式会社斯库林集团 | Substrate processing apparatus and substrate processing method |
CN111095517A (en) * | 2018-03-01 | 2020-05-01 | 株式会社国际电气 | Substrate processing apparatus, method of manufacturing semiconductor device, and program |
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JP6243784B2 (en) * | 2014-03-31 | 2017-12-06 | 株式会社Screenセミコンダクターソリューションズ | Substrate processing equipment |
JP6559976B2 (en) * | 2015-03-03 | 2019-08-14 | 川崎重工業株式会社 | Substrate transfer robot and substrate processing system |
WO2018182505A1 (en) * | 2017-03-31 | 2018-10-04 | Neitas Pte. Ltd. | Microdevice manufacturing system |
JP7336955B2 (en) | 2019-10-10 | 2023-09-01 | 東京エレクトロン株式会社 | Substrate processing system and substrate processing method |
JP7536582B2 (en) | 2020-10-01 | 2024-08-20 | ニデックインスツルメンツ株式会社 | Transport System |
JP2024029982A (en) * | 2022-08-23 | 2024-03-07 | 株式会社Screenホールディングス | Substrate processing apparatus |
JP2024044507A (en) * | 2022-09-21 | 2024-04-02 | 株式会社Screenホールディングス | Substrate processing apparatus |
CN115841976B (en) * | 2023-02-21 | 2023-05-05 | 无锡江松科技股份有限公司 | Silicon wafer transferring equipment and method |
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JPH05214535A (en) * | 1992-02-03 | 1993-08-24 | Dainippon Screen Mfg Co Ltd | Device for shifting substrate |
TW276353B (en) * | 1993-07-15 | 1996-05-21 | Hitachi Seisakusyo Kk | |
JP2929260B2 (en) * | 1993-12-31 | 1999-08-03 | 東京エレクトロン株式会社 | Method and apparatus for forming coating film |
JP2003152047A (en) * | 2001-11-09 | 2003-05-23 | Sharp Corp | Production system for semiconductor device |
JP4378114B2 (en) * | 2003-06-18 | 2009-12-02 | 東京エレクトロン株式会社 | Processing system |
JP4436689B2 (en) * | 2004-01-28 | 2010-03-24 | マルヤス機械株式会社 | Glass substrate transfer system |
JP4464993B2 (en) * | 2007-06-29 | 2010-05-19 | 東京エレクトロン株式会社 | Substrate processing system |
JP2009147266A (en) * | 2007-12-18 | 2009-07-02 | Mitsubishi Heavy Ind Ltd | Thin-film solar cell manufacturing apparatus system and common substrate storage rack |
JP5355908B2 (en) * | 2008-03-05 | 2013-11-27 | 住友電気工業株式会社 | Wireless communication system and base station apparatus |
JP4980978B2 (en) * | 2008-04-17 | 2012-07-18 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
-
2011
- 2011-01-13 JP JP2011004968A patent/JP5735809B2/en not_active Expired - Fee Related
- 2011-11-28 TW TW100143528A patent/TW201246435A/en unknown
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Cited By (4)
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CN111095517A (en) * | 2018-03-01 | 2020-05-01 | 株式会社国际电气 | Substrate processing apparatus, method of manufacturing semiconductor device, and program |
CN111095517B (en) * | 2018-03-01 | 2024-07-09 | 株式会社国际电气 | Substrate processing apparatus, method for manufacturing semiconductor device, and storage medium |
CN110783166A (en) * | 2018-07-25 | 2020-02-11 | 株式会社斯库林集团 | Substrate processing apparatus and substrate processing method |
CN110783166B (en) * | 2018-07-25 | 2021-06-22 | 株式会社斯库林集团 | Substrate processing apparatus and substrate processing method |
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JP2012146862A (en) | 2012-08-02 |
WO2012096144A1 (en) | 2012-07-19 |
JP5735809B2 (en) | 2015-06-17 |
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