201244185 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及一種半導體結構之製造方法，尤其涉及一種 發光二極體封裝結構之製造方法。 【先前技林ί】 [0002] 發光二極體憑藉其高光效、低能耗、無污染等優點，已 被應用於越來越多之場合之中，大有取代傳統光源之趨 勢。 [0003] 發光二極體是藉由採用電流激發其發光二極體晶片之方 式進行發光。根據所選用之材料，發光二極體晶片能夠 輻射出各種相應之可見光以及不可見光，範圍涵蓋紫外 至紅外波段。通常，發光二極體藉由在發光二極體晶片 上覆蓋一層螢光粉層配合使用來合成各種顏色光以進行 照明。然，在發光二極體封裝結構之製程中，完成螢光 粉層之固化後，由於發光二極體晶月或者螢光粉層之螢 光轉換材料調配之問題，有時會出現發光二極體封裝結 構之實際出光與預先設定之出光參數（如CIE色值或色溫 值）有偏差之情況，此時已無法做出對應調整，導致良 品率下降。 【發明内容】 [0004] 一種發光二極體封裝結構之製造方法，包括以下步驟： 準備步驟，提供基板；設置晶片步驟，設置發光二極體 晶片於基板上；形成第一螢光粉層步驟，在基板上形成 第一螢光粉層，該第一螢光粉層覆蓋於發光二極體晶片 之上；檢測步驟，向該發光二極體晶片供電使其發光， 100114992 表單編號Α0101 第4頁/共24頁 1002025064-0 201244185 設置光學感應器用以檢測發光二極體封裝結構發出光線 之CIE色度值或者色溫值，根據檢測出之數值，再進行下 面之固化步驟或者添加第二螢光粉層及固化步驟；固化 步驟，如果發光二極體封裝結構發出光線之CIE色度值或 者色溫值符合預先設定之參數，則加熱固化第一螢光粉 層；添加第二螢光粉層及固化步驟，如果發光二極體封 裝結構發出光線之CIE色度值或者色溫值不符合預先設定 之參數，則在第一螢光粉層上添加設置第二螢光粉層， 使得發光二極體封裝結構發出光線之CIE色度值或者色溫 值符合預先設定之參數，再加熱固化第一螢光粉層及第 二螢光粉層。 [0005] 採用本發明之發光二極體封裝結構製造方法，可藉由設 置第二螢光粉層對發光二極體封裝結構之出光進行一定 修正，可有效提高製造發光二極聲封裝結構之良品率。 [0006] 下面參照附圖，結合具體實施例對本發明作進一步的描 述。 【實施方式】 [0007] 圖1示出本發明一實施例之發光二極體封裝結構製造方法 之流程。該發光二極體封裝結構之製造方法包括如下步 驟： [0008] 步驟101，提供基板10 ; [0009] 步驟102，設置發光二極體晶片30於基板10上； [0010] 步驟103，在基板10上形成第一螢光粉層50，該第一螢光 粉層50覆蓋於發光二極體晶片30之上； 100114992 表單編號A0101 第5頁/共24頁 1002025064-0 201244185 [ooii] 步驟10 4 ’向該發光二極體晶片3 ο供電使其發光，設置光 學感應器200用以檢測發光二極體封裝結構發出光線之 CIE色度值或者色溫值； [0012]步驟1 〇5Α ’如果發光二極體封農結構發出光線之cIΕ色度 值或者色溫值符合預先設定之參數，則加熱固化第一螢 光粉層50 ; [0013]步驟105Β，如果發光二極體封裴結構發出光線之CIE色度 值或者色溫值不符合預先設定之參數，在第一螢光粉層 上添加設置第二螢光粉層，使得發光二極體封裝結 構發出光線之CIE色度值或者色溫值符合預先設定之參數 ’加熱固化第一螢光粉層50及第二螢光粉層6〇。 [0014] 下面結合其他圖示對該流程作詳細說明。請同時參考圖2 ’該基板10可以是鋁基電路板或者是表面設置有導電線 路之陶瓷基板如氧化鋁基板、氧化鋅基板或者矽基板等 。首先，在該基板10之表面上設置第—電連接部η和第 二電連接部12。該第一電連接部丨丨和第二電連接部。之 間相互絕緣。在本實施射，該第—電連接州和該第 二電連接部12從基板10之上表面延伸到下表 ，w , 成-種可表面貼裝之結構。接著，可選擇性:在::： 10之上表面上設置-反光杯2G。該反光杯2()在其中央圍 設出一容置部22，供該發光二極體晶片3〇容置於該容置 部22内。該反光杯20環繞該發光二極體晶片3〇，用以反 射聚攏發光二極體晶片30發出之光線。 [0015]然後，請同時參考圖3，在第一電連接部丨丨之上表面上設 100114992 表單編號A0101 第6頁/共24頁 1002025064-0 置該發光-+ 體發先結構（未曰:片30。該發光二極體晶片30包括半導 之第〜電核（未^)以及設置在半導體發光結構頂部 施例中，讀第〜票示）和第二電極（未標示）。在本實 結構遠離基技1〇^、第二電極間隔設置在半導體發光 第-電連接部項面上。該第-電極通過-導線4。與 另〜導線4G與第％戍電性連接，同樣’該第二電極通過 具有良好之導電〜電連接部12形成電性連接。該導線40 ο 光二極體晶片3()4%，通常由金屬材料製成。另，該發 發光二極體晶片之兩電極並不限於上述實施例中分佈於 晶片30之相反 之同—侧，其也可以位於發光二極體 應之電極及電。此種情況僅需要一根導線40連接相 3 部11、12 ’另外之電極及電連接部^ U可直接通過導 电膠實現電連接而無需使用導線40。201244185 VI. Description of the Invention: [Technical Field] The present invention relates to a method of fabricating a semiconductor structure, and more particularly to a method of fabricating a light emitting diode package structure. [Previous Technology] [0002] Light-emitting diodes have been used in more and more occasions due to their high luminous efficiency, low energy consumption, and no pollution. They have a tendency to replace traditional light sources. [0003] A light-emitting diode emits light by exciting a light-emitting diode wafer with a current. Depending on the material chosen, the LED wafer can emit a variety of corresponding visible and invisible light, ranging from the ultraviolet to the infrared. Generally, a light-emitting diode is synthesized by combining a layer of phosphor powder on a light-emitting diode wafer for illumination. However, in the process of the light-emitting diode package structure, after the curing of the phosphor powder layer is completed, the light-emitting diode may sometimes appear due to the problem of the phosphor conversion material of the light-emitting diode crystal or the phosphor layer. If the actual light output of the package structure deviates from the preset light-emitting parameters (such as the CIE color value or the color temperature value), the corresponding adjustment cannot be made at this time, resulting in a decrease in the yield. SUMMARY OF THE INVENTION [0004] A method for fabricating a light emitting diode package structure includes the following steps: a preparation step of providing a substrate; a step of disposing a wafer, disposing a light emitting diode chip on the substrate; and forming a first phosphor layer step Forming a first phosphor layer on the substrate, the first phosphor layer covering the LED chip; detecting step, supplying power to the LED chip to emit light, 100114992 Form No. 1010101 No. 4 Page / Total 24 pages 1002025064-0 201244185 Set the optical sensor to detect the CIE chromaticity value or color temperature value of the light emitted by the LED package structure. According to the detected value, perform the following curing step or add the second fluorescent light. a powder layer and a curing step; a curing step, if the CIE chromaticity value or the color temperature value of the light emitting diode package structure conforms to a preset parameter, heating and curing the first phosphor powder layer; adding the second phosphor powder layer and The curing step, if the CIE chromaticity value or the color temperature value of the light emitting diode package structure does not meet the preset parameter, then the first firefly Adding a second phosphor layer on the powder layer, so that the CIE chromaticity value or the color temperature value of the light emitting diode package structure conforms to a preset parameter, and then heating and curing the first phosphor powder layer and the second phosphor powder Floor. [0005] According to the manufacturing method of the LED package structure of the present invention, the second phosphor powder layer can be used to modify the light output of the LED package structure, thereby effectively improving the manufacturing of the LED package. Yield rate. The invention is further described below in conjunction with the specific embodiments with reference to the accompanying drawings. [Embodiment] FIG. 1 shows a flow of a method of manufacturing a light emitting diode package structure according to an embodiment of the present invention. The manufacturing method of the LED package structure includes the following steps: [0008] Step 101, providing a substrate 10; [0009] Step 102, disposing a LED substrate 30 on the substrate 10; [0010] Step 103, in the substrate Forming a first phosphor layer 50 thereon, the first phosphor layer 50 overlying the LED substrate 30; 100114992 Form No. A0101 Page 5 of 24 1002025064-0 201244185 [ooii] Step 10 4' supplying power to the LED chip 3 to emit light, and the optical sensor 200 is arranged to detect a CIE chromaticity value or a color temperature value of the light emitted by the LED package structure; [0012] Step 1 〇5Α 'If The cui Ε chromaticity value or the color temperature value of the illuminating diode illuminating structure illuminates the first luminescent powder layer 50 according to a preset parameter; [0013] Step 105 Β, if the illuminating diode sealing structure emits light The CIE chromaticity value or the color temperature value does not meet the preset parameter, and the second phosphor layer is added on the first phosphor layer to make the CIE chromaticity value or the color temperature value of the illuminating diode package structure illuminate. Pre-set The parameters' a first heat-curable phosphor layer 50 and the second phosphor layer 6〇. [0014] The flow will be described in detail below in conjunction with other diagrams. Referring to Fig. 2 at the same time, the substrate 10 may be an aluminum-based circuit board or a ceramic substrate having a conductive line on its surface, such as an alumina substrate, a zinc oxide substrate or a germanium substrate. First, a first electrical connection portion η and a second electrical connection portion 12 are provided on the surface of the substrate 10. The first electrical connection portion and the second electrical connection portion. They are insulated from each other. In the present embodiment, the first electrical connection state and the second electrical connection portion 12 extend from the upper surface of the substrate 10 to the lower surface, and are formed into a surface mountable structure. Next, it is optional to: - Reflective cup 2G is placed on the surface above::: 10. The reflector 2 () is provided with a receiving portion 22 in the center thereof for accommodating the LED chip 3 in the accommodating portion 22. The reflector 20 surrounds the LED chip 3 to reflect the light emitted from the LED chip 30. [0015] Then, please refer to FIG. 3 at the same time, and set 100114992 on the upper surface of the first electrical connection portion. Form No. A0101 Page 6 / Total 24 Page 1002025064-0 Set the light-+ body structure (not : Sheet 30. The LED wafer 30 includes a semi-conducting first to an electronuclear (not provided) and disposed in a top portion of the semiconductor light emitting structure, read a second indication (not shown). The solid structure is spaced apart from the base technology, and the second electrode is spaced apart from the surface of the semiconductor light-emitting electrical-electrical connection portion. The first electrode passes through the wire 4. The other wires are electrically connected to the first wire 4G and the first electrode. Similarly, the second electrode is electrically connected by having a good conductive-electrical connection portion 12. The wire 40 ο photodiode wafer 3 () 4%, usually made of a metal material. In addition, the two electrodes of the light-emitting diode chip are not limited to the opposite side of the wafer 30 in the above embodiment, and may be located at the electrode and the electrode of the light-emitting diode. In this case, only one wire 40 is required to connect the phase portions 3, 12'. The other electrode and the electrical connection portion can be electrically connected directly through the conductive glue without using the wire 40.
[0016] G 請同時參考圖4及圖ς 闽5，如步驟103所示，設置該第一螢光 層5〇於基板1Q上、反光杯2G之容置部22内並覆蓋該發 光-極體日日請。該第—螢光粉層5()可以採时樹脂、 環氧樹脂或其他透明材料。在本實施例中 ，該第一螢光 粉層50包含螢光轉換材料，接收發光二極體晶片3〇之光 線後可改變發出光之光特性。其中螢光轉換材料可以為 石榴石（garnet)結構之化合物、硫化物（suifide)、磷 化物（phosphate)、氮化物（nitride)、氮氧化物 (oxynitride)、矽酸鹽類（silicate)、砷化物、硒化 物或碲化物中之至少一種。根據實際需要，該第一螢光 粉層50可以填滿該反光杯20之容置部22(如圖4)，也可 以只填充容置部22之一部分（如圖5)。該第一螢先粉層50 100114992 表單編號A0101 第7頁/共24頁 1002025064-0 201244185 [0017] [0018] [0019] 100114992 可藉由注射成型或傳遞模塑成型等方式形成。在該步驟 中，該第一螢光粉層50填充於容置部22内後，尚未完全 固化，此時可用低溫（約100攝氏度）烘烤該第一螢光粉 層，增加其粘度以避免螢光轉換材料沉澱。 請同時參考圖6及圖7，如步驟1〇4所示，向該發光二極體 晶片30供電使其發光，在該發光二極體封裝結構上方設 置光學感應器2 〇 0，用以感應並檢測發光二極體封裝結 構發出之光線，如果光線之CiE色度值或者色溫值沒有達 到預先設定之參數，需進行步驟1〇5β，即在該第一螢光 粉層50上覆蓋設置一第二螢光粉層6〇，用以調整發光二 極體封裝結構所發出之光狀GIE色度值或者色溫值。該 第二螢光粉層60包含螢光轉換材料。該第二螢光粉層6〇 可藉由注射成型或傳遞模塑成型等方式形成。第二螢光 粉層60内之螢光轉換材料含量是根據光學感應器2〇〇測得 之參數調整。在此步驟中’完成該第二螢光粉層60覆蓋 設置後’可用高溫⑷5〇攝氏度）烘烤第—螢光粉層5〇 及第二螢光粉層60，以完成固化過程。 請同時參考圖8，當第—螢光粉層5G填滿該反光杯20之容 置部22時’該第二螢光粉層6()形成於第_榮光粉層5〇及 反光杯20之上；請同時參考圖圖9，當第一螢光粉層“只 填充容置部22之-部分時，該第二螢光粉層6()形成於第 一螢光粉層50之上並填充於容置部22内。 在步驟104中，請同時參考圖1G ’如果藉由光學感應器 200感應並檢測，得出光線之ΠΕ色度值或者色溫值已經 達到預先設定之參數’如步驟1〇5八所示，則不需要在第 表單編號A0101 第8頁/共24頁 1002025064-0 201244185 一螢光粉層50上覆蓋設置第二螢光粉層60，可用高溫（ 約150攝氏度）之直接烘烤第一螢光粉層50，完成固化過 程。請同時參考圖11，當第一螢光粉層50只填充容置部 22之一部分時，可以在第一螢光粉層50之上、容置部22 内填充一透明封裝層70。該透明封裝層70可以採用矽樹 脂、環氧樹脂或其他透明材料。 [0020] Ο[0016] Please refer to FIG. 4 and FIG. 5 simultaneously. As shown in step 103, the first phosphor layer 5 is disposed on the substrate 1Q and in the receiving portion 22 of the reflector 2G and covers the light-emitting layer. Please call us on a daily basis. The first phosphor powder layer 5 () can be made of a resin, an epoxy resin or other transparent material. In this embodiment, the first phosphor layer 50 includes a fluorescent conversion material, and the light characteristic of the emitted light can be changed after receiving the light of the LED of the LED. The fluorescent conversion material may be a garnet structure compound, a sulfide, a phosphate, a nitride, an oxynitride, a silicate, or an arsenic. At least one of a compound, a selenide or a telluride. According to actual needs, the first phosphor layer 50 may fill the receiving portion 22 of the reflector 20 (as shown in FIG. 4), or may only fill a portion of the receiving portion 22 (as shown in FIG. 5). The first powder layer 50 100114992 Form No. A0101 Page 7 / Total 24 pages 1002025064-0 201244185 [0019] [0019] 100114992 can be formed by injection molding or transfer molding. In this step, after the first phosphor layer 50 is filled in the accommodating portion 22, it is not completely cured. At this time, the first phosphor layer can be baked at a low temperature (about 100 degrees Celsius) to increase the viscosity thereof. Fluorescent conversion material precipitates. Referring to FIG. 6 and FIG. 7 simultaneously, as shown in step 1〇4, the LED device 30 is powered to emit light, and an optical sensor 2 〇0 is disposed above the LED package structure for sensing. And detecting the light emitted by the LED package structure. If the CiE chromaticity value or the color temperature value of the light does not reach the preset parameter, the step 1〇5β is performed, that is, the first phosphor powder layer 50 is covered with one set. The second phosphor layer 6〇 is used to adjust the light GIE chromaticity value or the color temperature value emitted by the LED package structure. The second phosphor layer 60 contains a fluorescent conversion material. The second phosphor layer 6 can be formed by injection molding or transfer molding. The amount of the fluorescent conversion material in the second phosphor layer 60 is adjusted in accordance with the parameters measured by the optical sensor 2'. In this step, after the completion of the second phosphor layer 60 is covered, the first phosphor powder layer 5 and the second phosphor layer 60 are baked at a high temperature (4) 5 〇 Celsius to complete the curing process. Referring to FIG. 8 simultaneously, when the first phosphor powder layer 5G fills the receiving portion 22 of the reflector 20, the second phosphor layer 6 is formed on the first glory layer 5 and the reflector 20 Referring to FIG. 9 at the same time, when the first phosphor layer "only fills a portion of the housing portion 22, the second phosphor layer 6 () is formed on the first phosphor layer 50. And filling in the accommodating portion 22. In step 104, please refer to FIG. 1G simultaneously. If the optical sensor 200 senses and detects, the chromaticity value or the color temperature value of the light has reached a preset parameter. In step 1〇5-8, it is not necessary to cover the first phosphor powder layer 50 on the phosphor layer 50 of the first form number A0101, page 8/24 pages 1002025064-0 201244185, and the high temperature (about 150 degrees Celsius) can be used. The first phosphor powder layer 50 is directly baked to complete the curing process. Referring to FIG. 11 simultaneously, when the first phosphor layer 50 only fills a portion of the housing portion 22, the first phosphor layer 50 may be The transparent portion of the accommodating portion 22 is filled with a transparent encapsulating layer 70. The transparent encapsulating layer 70 may be made of enamel resin, epoxy resin or the like. Material. [0020] Ο
該發光二極體封裝結構之製造方法，包括設置光學感應 器200用以檢測發光二極體封裝結構發出光線之CIE色度 值或者色溫值，根據檢測出之數值，再進行固化步驟或 者添加第二螢光粉層60及固化步驟，如果發光二極體封 裝結構發出光線之CIE色度值或者色溫值符合預先設定之 參數，則直接加熱固化第一螢光粉層50 ;如果發光二極 體封裝結構發出光線之CIE色度值或者色溫值不符合預先 設定之參數，則在第一螢光粉層50上添加設置第二螢光 粉層60，使得發光二極體封裝結構發出光線之CIE色度值 或者色溫值符合預先設定之參數，再加熱固化第一螢光 粉層50及第二螢光粉層60。例如藉由能發出紫外光之發 光二極體晶片30與含三基色螢光材料之第一螢光粉層50 配合使用從而得到發出白色光之發光二極體封裝結構， 如果第一螢光粉層50之三基色螢光材料配比出現偏差， 經光學感應器200檢測後得出此時出光之CIE色度值或者 色溫值不符合預先設定之白色光值，再根據混光原理經 計算調配製出含特定螢光材料之第二螢光粉層60覆蓋設 置在第一螢光粉層50上，使得發光二極體封裝結構最終 發出之光線符合預先設定之白色光。採用本發明之發光 100114992 表單編號A0101 第9頁/共24頁 1002025064-0 201244185 二極體封裝結構製造方法，可通過設置第二螢光粉層60 對發光二極體封裝結構之出光進行一定修正，可有效提 高製造發光二極體封裝結構之良品率。 [0021] 綜上所述，本發明確已符合發明專利之要件，遂依法提 出專利申請。惟，以上所述者僅為本發明之較佳實施方 式，自不能以此限制本案之申請專利範圍。舉凡熟悉本 案技藝之人士援依本發明之精神所作之等效修飾或變化 ，皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 [0022] 圖1為本發明一實施例之發光二極體封裝結構之製造方法 之流程圖。 [0023] 圖2為圖1中發光二極體封裝結構之製造方法之步驟101所 得之發光二極體封裝結構剖面示意圖。 [0024] 圖3為圖1中發光二極體封裝結構之製造方法之步驟102所 得之發光二極體封裝結構剖面示意圖。 [0025] 圖4為圖1中發光二極體封裝結構之製造方法之步驟103所 得之發光二極體封裝結構剖面示意圖。 [0026] 圖5為圖1中發光二極體封裝結構之製造方法之步驟103所 得之另一發光二極體封裝結構剖面示意圖。 [0027] 圖6為圖1中發光二極體封裝結構之製造方法之步驟104之 示意圖。 [0028] 圖7為圖1中發光二極體封裝結構之製造方法之步驟104之 另一示意圖。 100114992 表單編號A0101 第10頁/共24頁 1002025064-0 201244185 [0029] 圖8為圖1中發光二極體封裝結構之製造方法之步驟105B 所得之發光二極體封裝結構剖面示意圖。 [0030] 圖9為圖1中發光二極體封裝結構之製造方法之步驟105B 所得之另一發光二極體封裝結構剖面示意圖。 [0031] 圖10為圖1中發光二極體封裝結構之製造方法之步驟105A 所得之發光二極體封裝結構剖面示意圖。 [0032] 圖11為圖1中發光二極體封裝結構的製造方法的步驟105A 所得之另一發光二極體封裝結構剖面示意圖。 Ο . _ 【主要元件符號說明】 [0033] 基板：10 [0034] 第一電連接部： 11 [0035] 第二電連接部： 12 [0036] 反光杯：20 [0037] 容置部：22 [0038] 發光二極體晶片 :30 [0039] 導線：40 [0040] 第一螢光粉層： 50 [0041] 第二螢光粉層： 60 [0042] 透明封裝層：70 [0043] 光學感應器：200 100114992 表單編號A0101 第11頁/共24頁 1002025064-0The manufacturing method of the LED package structure includes the optical sensor 200 for detecting a CIE chromaticity value or a color temperature value of a light emitted by the LED package structure, and performing a curing step or adding a first according to the detected value. The second phosphor layer 60 and the curing step, if the CIE chromaticity value or the color temperature value of the light emitting diode package structure conforms to a preset parameter, the first phosphor powder layer 50 is directly heated and cured; if the light emitting diode is If the CIE chromaticity value or the color temperature value of the light emitted by the package structure does not meet the preset parameter, the second phosphor powder layer 60 is added on the first phosphor layer 50, so that the CIE of the light emitting diode package structure emits light. The chromaticity value or the color temperature value conforms to a preset parameter, and the first phosphor powder layer 50 and the second phosphor powder layer 60 are further cured by heating. For example, by using a light-emitting diode chip 30 capable of emitting ultraviolet light and a first phosphor powder layer 50 containing a trichromatic phosphor material, a light-emitting diode package structure emitting white light is obtained, if the first phosphor powder The ratio of the phosphors of the three primary colors of the layer 50 is deviated. After being detected by the optical sensor 200, the CIE chromaticity value or the color temperature value of the light output does not meet the preset white light value, and then the calculation is performed according to the light mixing principle. A second phosphor layer 60 containing a specific phosphor material is formed on the first phosphor layer 50 so that the final light emitted by the LED package conforms to the preset white light. Illumination using the present invention 100114992 Form No. A0101 Page 9/24 pages 1002025064-0 201244185 Diode package structure manufacturing method, the second phosphor powder layer 60 can be used to modify the light output of the LED package structure , can effectively improve the yield of the manufacturing of the LED package structure. [0021] In summary, the present invention has indeed met the requirements of the invention patent, and the patent application is filed according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS [0022] FIG. 1 is a flow chart showing a method of fabricating a light emitting diode package structure according to an embodiment of the present invention. 2 is a cross-sectional view showing a light emitting diode package structure obtained in step 101 of the method for fabricating a light emitting diode package structure of FIG. 1. 3 is a cross-sectional view showing a light emitting diode package structure obtained in step 102 of the method for fabricating a light emitting diode package structure of FIG. 1. 4 is a cross-sectional view showing the light emitting diode package structure obtained in step 103 of the method for fabricating the LED package structure of FIG. 1. 5 is a cross-sectional view showing another LED package structure obtained in step 103 of the method for fabricating the LED package structure of FIG. 6 is a schematic diagram showing the step 104 of the method for fabricating the LED package structure of FIG. 1. 7 is another schematic diagram of step 104 of the method of fabricating the LED package of FIG. 1. 100114992 Form No. A0101 Page 10 of 24 1002025064-0 201244185 [0029] FIG. 8 is a cross-sectional view showing a light emitting diode package structure obtained by the step 105B of the method for fabricating the LED package structure of FIG. 9 is a cross-sectional view showing another LED package structure obtained in step 105B of the method for fabricating the LED package structure of FIG. 10 is a cross-sectional view showing a light emitting diode package structure obtained in step 105A of the method for fabricating a light emitting diode package structure of FIG. 1. 11 is a cross-sectional view showing another light emitting diode package structure obtained in step 105A of the method for fabricating the LED package structure of FIG. Ο . _ [Main component symbol description] [0033] Substrate: 10 [0034] First electrical connection: 11 [0035] Second electrical connection: 12 [0036] Reflector: 20 [0037] accommodating part: 22 Light Emitting Diode Wafer: 30 [0039] Conductor: 40 [0040] First Fluorescent Powder Layer: 50 [0041] Second Fluorescent Powder Layer: 60 [0042] Transparent Encapsulating Layer: 70 [0043] Optical Sensor: 200 100114992 Form No. A0101 Page 11 / Total 24 Page 1002025064-0