TW201241134A - Method of processing a base material - Google Patents

Abstract

The present invention provides a method of processing a base material by temporarily fixing the base material on a support base material and processing the substrate, and then separating the substrate from the support base material. In this process, a reduction of conductivity is prevented at a conductive part containing copper which is formed on the base material at the side facing the support base material. The method of processing a base material of the present invention has a first step of forming a thin film by providing and drying a temporary fixative containing a resin component whose main material is a norbornene based resin or a polycarbonate based resin onto at least one of the base material which has a functional surface having a conductive part containing copper, or a support base material; a second step of laminating the base material and the support base material through the thin film, as a result the functional surface is faced with the support base material; a third step of processing a surface of the base material at the opposite side of the functional surface; a forth step of separating the base material from the support base material by heating the thin film to be thermally decomposed the resin component. During the forth step, the base material is separated from the support base material under an non-oxidizing gas atmosphere, then the base material is cooled.

Description

201241134 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a method for processing a substrate, and more particularly to a method for processing a substrate by temporarily fixing it to a support substrate using a temporary solid material. ^ This application is based on the date of December 20, 2010 in Japan, 20=-278681 and Japan's special offer 2〇1〇_278682. The content is hereby applied. [Prior Art] [0002] At the time of pet [0003] (The precision of the fine-grained precision of the back-grinding machine used by Yotaru S and grinding. I. Back-grinding (BG) tape ΐ Thickness is not uniform -^ In the case of the [0004] case of the wafer being ground, the rounding of the semiconductor 35 can be as low as _ 18 Gt: but the temperature is used to form the film. The adhesion of the yang paste ^ is improved. In addition, it will be removed from the 4 film position and the GBG _ bonding layer will be peeled off [0005] in the mechanical study and ^= is the semiconductor crystal of ^1 》, sometimes it will be caused by • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • A method of fixing a support substrate to a smooth surface. [0007] For example, when etching is performed for the purpose of removing stress, it is necessary to heat to a high temperature, and the PET film cannot withstand such a high temperature. In such a case, it should be applied. Method of supporting a substrate. [0 0 08] The high temperature softens and can be easily detached from the semiconductor wafer as a fixing material for fixing the substrate to the supporting substrate (for example, refer to the patent [0009] 固定 丨ΐ ΐ ΐ ΐ 固定 固定 以 以 以 以 以 以 以 以 以 以 半导体 半导体 半导体 半导体 半导体 半导体 半导体The functional surface is in support of shyness - Ξίί wafer _ on the support substrate, for semiconductor crystal processing. But then when heated to high temperature and the semiconductor wafer is off 曰H function surface if there is copper When the wiring material electric portion is formed, the semiconductor thermal state is in contact with oxygen in the gas atmosphere. As a result, copper is oxidized, and k becomes a problem that the conductivity of the conductive portion is lowered. [0010] The problem of the U-hai is not limited to the functional surface. [Brief Description of the Invention] [Technical Document] [Patent Document 1] Japanese Patent Application Publication No. 2010-531385 [Draft] [Invention] [Problem] 201241134 [0012] - The object of the present invention is to provide a method for processing a substrate, which is provided after the substrate is temporarily fixed on a support substrate and the substrate is processed. When the substrate is separated from the substrate, the conductivity of the copper-containing conductive portion formed on the support substrate side of the substrate can be suppressed from decreasing. [Solution] [0013] Such a purpose can be achieved by the following (1)~ (16) The present invention is achieved by the method of the present invention. (1) A method for processing a substrate, comprising: the first step: comprising a resin comprising a decene-based resin or a polycarbonate-based resin as a main material The temporary fixing agent comprising the resin composition of the component is formed by supplying at least one of a substrate having a functional surface having a conductive portion containing copper and a supporting substrate for supporting the substrate, and then drying to form a film; In the second step, the substrate and the support substrate are bonded to each other on the support substrate side via the film; and in the third step, the substrate is opposite to the functional surface. Processing, in the fourth step, the substrate is removed from the support substrate by heating the film; and the substrate is removed from the non-oxidizing gas atmosphere having an oxygen concentration of 30 ppm or less in the fourth step Later from the supporting substrate, the substrate will be cooled. (2) The method for processing a substrate according to (1), wherein the resin component is a resin component which is a main material of a decylene-based ruthenium. (3) The method for processing a substrate according to (2), wherein, in the fourth step, the resin component is thermally decomposed and melted or vaporized by heating the film, thereby causing the substrate Detach from the aforementioned support substrate. (4) The method for processing a substrate according to (2) or (3), wherein the fourth substrate is the first 20 (the above substrate is separated from the support group by the TC or more) (5) The processing method of the substrate according to any one of (2) to (4), wherein, after the foregoing base Wei is separated from the foregoing branch material, the front wire is cooled. [0018] Step (6) For example (2) The method for processing a substrate according to any one of (5), wherein, in _, the non-oxidizing gas atmosphere is a passive gas atmosphere. [0019] Item (7) (2) to (6) The method for processing a substrate according to any one of the preceding claims, wherein the step of 'providing the temporary fixing agent to the front substrate of the substrate and the support substrate to form the film is formed. (8) The method for processing a substrate according to any one of (2) to (7), wherein the film is formed to have an average thickness of 前述. (9) The method for processing a substrate according to (1), wherein the resin component is a resin component, and the non-oxidizing property in the fourth step is 〇.1 ppm or more and 3 〇ppm or less. Non-oxygen concentration Oxidizing gas [0 0 2 2] The method for processing the second substrate, wherein in the fourth step, the substrate is removed from the support substrate by the above-mentioned, to 200 ° C or more. [0 0 2 3]加工J, 十义^9) or (1〇) substrate processing method, wherein 'in the fourth step, after the other substrate is detached from the support substrate, the second step (TC. Moreover, the substrate is cooled to a processing method of the substrate of any one of items (9) to (9), wherein the fourth step of the previous step of 201241134 is 'the aforementioned non-oxidation. The method for processing a substrate according to any one of the preceding claims, wherein, in the first step, the substrate and the The method of processing a substrate according to any one of (9) to (13), wherein the support substrate of the support substrate is supplied to the substrate. The film is formed in the first step of the first step to have a thickness of 10 to 100 μm. The substrate is any one of the items (9) to (14). In the processing method, the resin component is irradiated with the active energy ray by the temporary fixing agent, and the thermal decomposition temperature is lowered, and before the fourth step, the active energy ray is emitted to the film. (16) The method for processing a substrate according to (15), wherein the resin component is in the presence of an acid or a decrease in the thermal decomposition temperature, and the resin composition further comprises the active energy Irradiation of the radiation produces an acid or base active agent. [Effects of the Invention] According to the method for processing a substrate of the present invention, the substrate is processed in a state in which the substrate is temporarily fixed to the support substrate via a film formed using a temporary fixing agent, and then the support base is provided. When the material is separated from the substrate, it is possible to surely prevent or suppress oxidation of copper contained in the conductive portion formed on the support substrate side of the substrate. As a result, it is possible to suppress the decrease in the conductivity of the conductive portion and at the same time to perform high-precision processing on the substrate. [Embodiment] [Embodiment of the Invention] [0030] Hereinafter, a method for processing a substrate of the present invention will be described in detail in accordance with an ideal embodiment of the drawing. Soil 201241134 [First Embodiment] Before the addition of the β method of the first embodiment of the first embodiment, the temporary fixing agent used in the first embodiment of the present invention will be described. <Temperature Fixing Agent> The solidifying agent' is for temporarily fixing the base material to the support material in order to base the substrate aJ:', and heating the substrate after processing. The substrate is removed from the front substrate, and is composed of a tree called a resin. The heterotrophic component 'has been characterized by being thermally decomposed by the aforementioned heating to be melted or rolled, or thermally melted by the aforementioned heating. By using such a temporary fixing agent, the substrate can be processed in a state in which the substrate is temporarily fixed to the supporting substrate by using a film formed of a temporary fixing agent, and further, since the film is heated after processing, The resin component is melted or vaporized, or the resin component is melted, whereby the substrate is separated from the support substrate. The following description will be based on the respective components constituting the resin composition containing the resin component. [0035] The sapling component is a function of fixing the substrate to the substrate when temporarily fixed (during processing of the substrate), and is thermally decomposed and lowered by the aforementioned heating of the temporary fixing agent. On the other hand, it melts or vaporizes, or is thermally melted by heating, so that the joint strength thereof is lowered, so that it has a function of allowing the support substrate to be detached from the substrate. & [0036] In the present embodiment, the resin component is composed of a decene-based resin as a main material. When the decene-based resin is used, when the substrate is processed from the substrate after the substrate is processed in a non-oxidizing gas atmosphere formed by an oxygen concentration described later, it is possible to suppress formation on the support substrate side of the substrate. The conductivity of the copper-containing conductive portion is lowered, and the substrate can be easily separated from the support substrate. 201241134 [0 0 3 7] The structure of the single tree material, for example, includes the knot represented by the following general formula (1Y) 8]

R1 R2 R3 R4 〇0 V) [0 0 3 9] Burning base ((fangit-' Gan R # each is hydrogen, linear or branched carbon number 1~20. One. 7 base, alicyclic The group, the glycidyl ether group, and the following substituent (2Y) are, for example, an integer of 0 to 4. [0 0 4 〇] R5 R6 J^7 (2 Y) (cH)n-Sill8 [0 0 4 1] The shape lR5 is hydrogen, sulfhydryl or ethyl, r6, r7 and r8 are each directly condensed i & number 1~2G filament, linear or branched carbon number 1~20 bis #二二ί a chain or branched carbon group having a carbon number of 1 to 20, a linear alkyl group having a weight of 1 to 20, a substituted or unsubstituted carbon number of 6 to 20 In addition, η is an integer of 0 to 5. [0042] # The linear or branched carbon number of 1 to 2 is not particularly limited, and may be a base, an ethyl group, or a propyl group. , butyl, pentyl, hexyl, heptyl, octyl, i, violent, etc. [0043] butyl, ruthenium gamma, which is excellent in mechanical properties at the time of mutual dissolution in 201241134.兮箄 ΐΐ ΐΐ ΐΐ 不 不 不 不 不 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可The mechanical properties of the temporary solidification are excellent. [0045] The n group is not particularly limited, and examples thereof include a -domain diethyl group, a tetracyclododecyl group, a methyltetracyclic free radical group, and a tetrakisyl group. Dibasic, ethyltetracyclic ten: 7 ethyl, tetracyclic + _ its, Lu A —, w, butyl thief, ethylene tetradecyl 12, phenyl pentoethyl dimer, etc. An alicyclic group, etc. [0046] The mechanical properties of the temporary substrate and the support substrate are temporarily fixed, and the cyclohexyl group and the norbornene group which are excellent in [jr:?] are preferable. However, SSi(2Y) is preferable. I^R5 is particularly limited to hydrogen, and it is preferred to use a hydrogen atom which is excellent in thermal decomposition property upon heating. The carbon numbers R6, R7 and R8 are each linear or branched, and the silk is used. a linear or branched carbon alkoxy group having a carbon number of from 1 to 20, a linear filament of a linear Wei 1 to 2G, a alkyl group having a carbon number of from 1 to 20, a substituted or unsubstituted group. The aryloxy group having 6 to 2 carbon atoms may be any one, and is not particularly limited. Thus, such a substituent is, for example, a decyloxy group, an ethoxy group, a propoxy group, a butoxy group, or a pentyl group. , base, methoxy, propylene , butyl oxy group, methyl peroxy group, isopropyl emulsifiable group, tert-butylperoxy group, phenoxy group, hydroxyphenoxy group, naphthyloxy group, etc. In the case of ruthenium, it is preferred to support the substrate, and to provide a methoxy group, an ethoxy group or a propoxy group which is excellent in mechanical properties in the processing of the substrate. [0050] m in the above formula (1Y) The integer of G to 4 is not particularly limited, and is preferably 。 or ]. When m is 0 or 1, the structural unit represented by the above formula (1Y) can be represented by the following formula (3Y) or (4Y). . [0 0 5 1] Loan (3Y) R1 R2 R3 [0052]

k, R2 R3 [0 0 5 3] and Rl;: R4 each money, straight and broken

Substituent (2Y) [0054] The integer of 0 to 5 in the above substituent (2Υ) is preferably 〇. When η is 0, it is not particularly limited, and the = group is directly bonded to the polycyclic ring via a carbon bond, and the thermal decomposition property of the agent and the substrate force-time =.

' can be reduced by 莰 f, 5 · propyl decene, 5- butyl decene, 5-heptyl decene, 5-octyl decene, 5 _ 12 201241134 sulfhydryl, 5-Mercapto-based Poverty-reducing 5 olefins, 5-trimethyl sulphate decyl group ": 55 · Benzene, 5 - triethoxy sylvestyl sulphate decyl decyl decene, 孓 2 f : Yin, ke The thiol-reducting decene, 5-methyl dimethylene and other reducing materials were transferred to the compound, and the 5 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The monomer poly-' can also be used to reduce the majority of the system ^ 2 single-type (tetra) olefinic monomers, preferably the substrate and support for the enthalpy. _ butyl reduction If diluted, 5 癸 癸 降 二 暂 暂 暂 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 机械 机械 〇 〇 〇 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 The above-described decene-based resin, the mono-structural unit forming H 疋 ' can be represented by the above formula (1 Υ). [0058] It can be formed from a plurality of structural units. The above-mentioned lanthanide-based resin, more basal drop _, polyethyl _ _ 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚Polyacrylamide, bin dimethyl fluorenyl hydrazine = olefinic ethoxylated decyloxycarbazide (tetra) thiophene, polymethyl dimethyl hydrazine, etc. , poly-oxypropoxymethyl-thin-glycidoxymethyl group 1 := sec-based olefin copolymer, tropene copolymer, thiol decyl lacquer: ^22 ^ Triethoxy fluorenyl hydrazine 2 propoxymethyl hydrazine ί 聚 聚 得 得 得 得 得 得 得 得 得 得 得 得 得 得 得 得 得 得 得 得 得 得 得 得 得 得 得 得 得 得 得 得 得Sexual ϊΐ匕 = 基 基 基 暂时 暂时 暂时 暂时 暂时 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械W copolymer 201241134 gas-based methyl group; to: copolymer, decyl-decene-cyclopropene, 癸 secret age, recorded fresh base dilute copolymer copolymer. The ethyl cyanoacrylate-glycidoxymethyl methyl hydrazine [0060] is particularly a phthalic acid, an olefinic resin, and a resin which is not a resin, and is also used as a structural unit of a sputum-based starting agent. Nickel-containing catalyst, free radicals [0062] Further, the resin component 'supplements are preferably composed of a resin composition of 1〇ί#〇/-100 2 / -i疒% in a ratio of 8% by weight to 100% by weight. Blending ^. The hunting is 10% by weight or more, especially 8% by weight or more, and the residual _ after thermal decomposition. Further, by increasing the number of trees in the finished product, it is effective to carry out the temporary fixing agent in a short time. ‘ ' [0063] The resin composition may contain other components shown below in addition to the resin component of the decene-based resin as the main material. (Antioxidant) That is, the resin composition (temporary fixative) may also contain an antioxidant. The antioxidant has a function of preventing acid from being generated in the resin composition (temporary fixative) or preventing natural oxidation. 14 201241134 The antioxidant is not particularly limited. For example, it is preferably used by Ciba Fine Chemicals Co., Ltd., "Ciba IRGANOX (registered trademark) 1〇76" and "ciba IRGAFOS (registered trademark) 168". [0067] Further, other antioxidants, for example, rCibaIrgan0x 129", rCiba can also be used.

Irganox 1330", "Ciba Irganox 1010", "ciba Cyanox (registered trademark) 1790", "Ciba Irganox 3114, Ciba Irganox 3125" and the like. The content of the antioxidant is preferably 〇丨~(1) parts by weight, more preferably 0.5 to 5% by weight, based on the weight of the resin component 丨(8). (Additive), the resin composition (temporary fixative), if necessary, may include an acid scavenger, an acrylic, an anthrone, a fluorine-based, a vinyl-based coating agent, a decane coupling agent, and a dilution. Additives such as agents. The decane coupling agent is not particularly limited, and examples thereof include: glycidoxypropyl methoxymethoxy sulphate, 3-glycidoxypropylmethyldiethoxy oxime, and 3 ring. Oxypropoxypropyl diethoxy decane, p-styryl trimethoxy decane, 3- methacryloxypropyl methyl decyloxy decane, 3-methyl propylene methoxy propyl trimethyl Oxydecane, 3-mercaptopropenyloxypropylmethyldiethoxydecane, 3-mercaptopropenyloxypropyltriethoxydecane, 3-propenyloxypropyltrimethoxyl Decane, N 2 -(aminoethyl)_3_aminopropylmethyl decyloxymethane, 'N_2•(aminoethyl)_3·aminopropyltrimethoxy oxetane, N-2-( Aminoethyl)_3.Aminopropyltriethoxydecane, 3-aminopropyltrimethoxysulfate, 3-aminopropyltriethoxydecane, N-phenyl-3-amino Propyl tridecyl oxide, 3, propyl propyl decyl dimethoxy sulphate, 3 - benzyl propyl trimethoxy sulphur, bis (diethoxypropyl ) tetrasulfide, 3 _ The isocyanate propyl triethoxy decane may be used singly or in combination of two or more kinds. [0 0 7 1] The resin composition (temporary fixative) can improve the adhesion of the substrate to the support substrate of 15 201241134 by including a decane coupling agent. [0 0 7 2] Qualification, such as: weid ancestor (eydGhexeneQxide) or oxygen ===== money (four) followed by _ base)] bicyclic aliphatic B flow H and by including a diluent, can improve the temporary The moisture permeability of the fixed agent. b' Sacrificial layer formation step is raised temporarily to support the base [00 74] (Solvent) U month (temporary agent) may also contain a solvent. Easily composed of fine solvent-containing materials can adjust the viscosity of the resin domain [0076] Toluene J: =: Hydrazine, mineral concentrate (four), 1 class, and other hydrocarbons, diol A: B = B: Tobacco t benzophenone, propylene glycol monomethyl sulphide, dipropylene f It:;. TS::/ts^sl / Nessa-1 曰, monoethyl ketone early ether acetate, propyl carbonate, γ-butylene The esters and the like π 2 cyclohexanone, methyl isobutyl lang, 2 sides - each of the simmering _ / internal amines ' can be used (10) or combination = above. In this case, the temporary fixing agent can be easily adjusted. The sacrificial layer (film) composed of a person is formed on the supporting substrate. '^又' #: 4 Fixing agent [0 0 7 7] The έ畺 丨 丨 έ畺 έ畺 έ畺 έ畺 έ畺 έ畺 έ畺 έ畺 έ畺 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂Better. [alpha]) [0 0 7 8] 201241134 <Manufacturing method of semiconductor device> The temporary fixing agent can be applied, for example, to a semiconductor device, that is, a semiconductor crystal in a method of manufacturing a semiconductor device. For the processing of a circle, a method of processing a substrate of the present invention using a temporary fixing agent is applied. [0080] The following is directed to the implementation of the method for curing the substrate of the present invention. The semiconductor wafer (substrate) processing has the following steps: a third step, having the function of having a conductive portion containing copper The semiconductor wafer and the supporting substrate for supporting the wafer are supplied with the temporary fixing agent to form a layer (film); and in the second step, the supporting substrate and the half layer are separated by the layer The round circle is bonded to the support substrate side by the functional surface of the semiconductor wafer; the third step Y = the semiconductor wafer is processed on the opposite side of the functional surface; and in the fourth step, 7 the substrate is heated. The semiconductor wafer is detached from the support substrate. In the fourth step of the semiconductor crystal processing method of the above configuration, the conventional embodiment is such that the semiconductor wafer is separated from the supporting substrate in an oxygen-concentrated non-oxidizing gas atmosphere of 3 〇ppm or less, and then cooled. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a longitudinal cross-sectional view showing a processing step of a semiconductor circle for explaining a method of processing a substrate of the present invention. In the following description, the figure is "upper" and the lower side is described as "lower". [0082]

The following steps are described in detail for each of the steps. Further, when the sacrificial layer is selectively formed on the support substrate in the semiconductor wafer and the support substrate, the following is a ' aB [0083] (Step of forming the layer) First, the support substrate is prepared as shown in Fig. 1(a). Show. The support substrate (on the substrate y) is formed by using the temporary fixing agent described above (the second step). [0084] 201241134 The addition of the temporary fixing agent to the support substrate 1 is performed by heating the back substrate. Dry and easily formed. 1Return [0085]

Mech: nicai Anai^s) Yu-Yu Niu (10) Ren Niu Cong, Shi, at 200 c, preferably about 5〇~180 c. Therefore, when the sacrificial layer 2 is heated by the conditions described later, the thermal decomposition or bribe of the component can be surely = or =, or the semiconductor wafer 3 is generated. [0086] (9) The surface is measured: ^ The heat-enhanced ^ 则 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定 定good. According to the 5〇〇m?=nn agent, the viscosity (pit) is [0 0 8 9] soil use, spoon L000~50, 〇〇〇mPa · s is better. Also, the viscosity (25. 〇, can be used E-type viscometer East [2. Type 2 = temperature, 3 minutes after the 値 値 ' 供给 供给 暂 暂 暂 暂 暂 暂 暂 暂 暂 暂 暂 暂 暂 暂 暂 暂 暂 暂 暂 暂 支持 转速 转速 转速 转速 转速 转速 转速 转速 转速 转速 转速 转速fPm is preferably set to about 500 to 3, preferably 500 rpm. [0 0 9 1] When the spin coating method is used, the average thickness of the layer 2 is sacrificed by satisfying the conditions. Preferably, ^. Further, the sacrificial layer 2 such as the thickness can be made into a thickness of approximately (4), which is the viscosity of the temporary fixing agent (25. 〇 is set to A[mPa · the speed of the sister 1 B[rpm], a/b is 〇13~330, 〇5~1〇〇 soil = special average and flat thickness cake thickness 5G~ just _ [0093] 3 degrees The i wire material 1, ^ is particularly limited, and can be finely supported to support the semiconductor wafer [0094] such a supporting substrate 1, for example, quartz glass, soda glass frit, or poly(terephthalic acid), polynaphthalene Ethylene glycol vinegar diacetate, resin materials such as cycloolefin polymer, polyamine, polycarbonate, etc. [0095] (Finishing step) Next, as shown in Figure 1 (b), in support On substrate 1 The sacrificial layer 2 is placed on the semiconductor crystal 1K substrate 3, and the functional surface 31 is brought into a state of interest (4). Thereby, the support substrate 1 is separated from the wafer 2 (the second step). [0096] That is, the semiconductor wafer 3 and the support substrate 1 31 are bonded to each other on the side of the support substrate 1 via the sacrificial layer 2'. The kiln surface [0 0 97] The device can be easily carried out using, for example, a vacuum press, wafer bonding, crying 3 19 201241134, etc. [0 0 9 8] Here, in the present invention, the semiconductor wafer 3 is provided on its functional surface 31 by A conductive portion such as a wiring or a terminal and a bump formed of a conductor containing copper. By covering such a functional surface 31 with the layer 2 and bonding it to the supporting substrate, the function is used as a protective functional surface. The function of the protective layer of 31. Therefore, when the semiconductor wafer 3 is processed on the opposite side to the functional surface 31 in the next step, it is possible to surely suppress or prevent the functional surface 31 from being damaged or electrically conductive. The servant of the ministry. [0099] milk

Further, the temperature at which the semiconductor wafer 3 is bonded to the support substrate 1 is preferably in the range of about ~200 〇C higher than the TMA softening point, and more preferably in the range of about 60 180 C higher than the TMA softening point. By heating the layer 2 under the condition of § hai and thermocompression bonding to the functional surface 3, the layer 2 will contact the functional surface 3 in a molten state. The functional surface 31 of the semiconductor wafer 3 is formed with the above-described conductive portion as described above, so that the functional surface 31 is composed of an uneven surface. As described above, although the functional surface 31 is composed of the concave-convex surface, the sacrificial layer 2 is in a smeared state, and when the sacral layer 2 contacts the functional surface 31, the slab is embedded in the functional surface 31 following the concave-convex shape. As a result, it is possible to surely suppress the formation of the gap between the layer 2 and the functional surface 31. The semiconductor wafer 3 can be spaced apart from the support wafer, and the semiconductor layer 3 and the substrate 1 are excellent. Adhesive joint. [0100] The pulse can effectively prevent the age layer 2 from softening to the above, and therefore, when the bulk wafer 3 and the support substrate 1 are pressed in a direction close to each other, it is possible to surely prevent the sacrificial layer 2 from being partially semiconductor. The wafer 3 and the support substrate 1 = extrusion and thus the interval between the conductor pure 3 and the support substrate i cannot be maintained [0101] and the temperature of the bribe is added to the surface of the layer 2 == minutes compared to TM5 Minutes are better. By the second = 犠 = ; then the temperature heating inside the compensation can be sure to make the difficult layer 2 into a surface-melting state. 20 [0102] 201241134 Fish * The temperature range is heated at the temperature of (4) 2, and the dust force when the rotating wafer 3 is pressed in the direction in which the rotating wafers 3 are close to each other is not particularly limited, and is preferably 1 '' a, preferably 0.012 to 2.5 MPa. More preferably, about 〇.〇5~2. 〇 最 最 将 将 最 最 最 最 最 最 最 最 最 埋 埋 埋 埋 埋 埋 埋 埋 埋 埋 埋 埋 埋 埋 埋 埋 埋 埋 埋 埋 埋 埋 埋 埋 埋 埋 埋 埋 埋Extrusion. It is also a surface of 3, the unevenness 'even if a large volume like a bump is formed, usually the layer is formed with a step difference of 1 so that the average film thickness of the sacrificial layer 2 is preferably formed into a film when the sacrificial layer 2 is formed as described above. The general description of the functional surface consisting of the concave and convex surface is in a uniform sentence, she leaves. In addition, the functional surface 31 [0104] (force 17 step) can be used. Next, the fixing force* is interposed between the main layer 2 and the surface of the opposite side is added to the conductor wafer 3 i (cw^ [〇Γ?6]* cloth film, steamed ore, etc. In the oxygen contact, causing the mine to be adjacent to the right side of the electricity, the electrical conductivity in the gas atmosphere is reduced by copper =, as a result, the conductive portion will occur. In the present yoke configuration, as described above (fitting step) 201241134 ΪΪΓ Ι 将 功能 功能 功能 功能 功能 将 将 将 将 覆盖 覆盖 覆盖 覆盖 ' ' ' ' ' ' ' ' ' ' 该 该 该 该 该 该 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲0107] 郷 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , At the same time, in the state of the interval, the casting wafer 3 is integrated with the substrate 2, and it is assumed that the semiconductor wafer 3 and the supporting substrate 1 are not excellent in the dense wafer 3 and the supporting substrate 1 The problem that the distance between the spacers is not kept at a fixed distance. In the present embodiment, the distance between the substrates 1 is half. It is maintained at a fixed interval, so ί5 [0108] Raw: That is, the grinding and polishing of the back surface of the semi-f-body wafer 3 can be performed with excellent precision without unevenness in thickness. [0109] Step) Supporting the 'heating of the layer 2 to separate the semiconductor wafer 3 from the [0110]. In the 5 脱离 detachment step, the material is crystallized at a concentration of 3 〇 ppm in a deuterated gas atmosphere. After the circle 3 is separated from the support substrate 1, the enthalpy + the conductor wafer 3 is cooled. π [0111] b is in the ί 'discussion of the case, etc. 'Description: the resin is reduced by the main oxygen Thermal decomposition or thermal melting will occur at a lower concentration. And, the rotation of the rotating body M 3 plus _ high temperature I can make the rotating wafer 3 out of the supporting substrate 低 under low oxygen concentration, even if the work 22 201241134 Energy surface 31 acts as a protective layer ^ ^ ^ Contains the oxidation of copper. Xiang Du ~ Lu Yong also suppresses the conductive part [0112] Your main person waits for these points and finds that it will be added敎 Sacrificial sound μ r pyrolysis or heat, melting == low === oxidation of copper, is the wire (4). w (four) is guided by [0 113 It is better to use New Zealand, if it is 3 or less, = is: ^.5ppm or more, 25ppm or less, and more preferably _ 虞. Also, the lower limit is also stated, and there is also a λ guide that cannot obtain the corresponding higher effect. Then, the copper contained in the conductive portion is oxidized to make the conductive portion smooth = 虞, or the composition of the tree 曰 由于 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 , , , , , , , , _ 2 (8). The temperature above C is _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Time. When the semiconductor wafer 3 is cooled from the support substrate 1 and is cooled by the half-day yen 3, it is preferably lower than 200 ° C, more preferably about when the semiconductor wafer 3 is separated from the support substrate 1 and is heated. 80~200. (:, it is also performed in the west? 1〇0~18〇〇C. By this, even if the semiconductor wafer 3 is rolled under a gas atmosphere after cooling, the conductive portion can be more reliably suppressed or prevented [0116] a chemical gas atmosphere, for example, a passive gas atmosphere such as nitrogen or argon (5), a reducing gas atmosphere such as oxygen or carbon monoxide, and about 10-1 to 1 〇 6 ι 4 · :?·* α. 23 In the decompressed gas atmosphere of 201241134, etc., the pure gas atmosphere is preferable, whereby the oxygen concentration in the gas atmosphere can be set within the above range by a simple operation of flowing a passive gas into the chamber. [0117] ^, in the ten steps, the semiconductor wafer 3 is separated from the supporting substrate 丨, and can be distinguished as: thermal decomposition of the resin component using the falling & silane as the main material * low molecular weight causes melting or gasification The detachment is allowed, and the resin component is thermally melted to thereby disperse it. [0118] Therefore, the temperature of the sacrificial layer 2 is heated, and the olefinic resin is used as the age of the heat to thermally decompose or heat and prevent the rotation. Wafer 3 ^ degrees, pot words 'more than a weaving 1 team battle, more [0119 】 = ' Yu Peng ~ less than 30 (TC heating the layer 2, the sacrificial layer 2 t ί hot = gas: '犠 层 layer [0 1 2 0] people, thousands of wafer 3 off the support substrate丨, 宜利狮., [0 12 1] In this specification, detachment refers to the crystallisation of a semiconductor. The operation, in particular, does not deviate from the straight direction of the layer, or makes the semiconductor crystal The surface of the dome 1 is a method of sliding in a horizontal direction to be detached, or a method of making the semiconductor wafer 3 from the end side of the semiconductor wafer 3 3 丨 (8), etc. The support substrate 1 is floated. [0122] 24 201241134 Moreover, after the heating step is performed to vaporize the layer 2, the semiconductor wafer 3 and the supporting substrate i are removed, so that the wafer 3 is separated from the supporting substrate. It is easy to prevent the conductivity of the conductive portion from being suppressed by suppressing or suppressing the conductive portion of the copper-containing conductive portion.虱化/,,,.σ [0124] (washing step) Next, 'the aforementioned detachment step, plucking the layer 2 The layer 2 of the energy surface 31 is washed. The residue of the layer 2 remaining on the surface 31 is removed. The method of removing the impurities is not particularly limited to the impregnation treatment, the polishing treatment, the heat treatment, etc. The state, the electric water treatment, the music Liquid [0126] Forming a step in the _ layer, so that the layer 2 is formed on the supporting substrate, but is not limited to the riding shape, and the sacrificial layer 2 may be formed in both of the 县 丨 , =, or the supporting substrate may be omitted. Open ^ ^ ^ 曰 ^ 3 Selectively form a sacrificial layer 2 on the semiconductor wafer 3. The Μ-axis layer 2, and [0127] The back surface of the semiconductor wafer 3 is processed as described above. Further, in the present embodiment, the pattern is selectively formed on the support substrate i, and can be selectively formed on the material wafer 3 to support the sacrificial layer 2, thereby simplifying the sacrificial layer 2. In the form of "fee ^ two orders", the sturdy face of the formation of the branch material 1 can also obtain the effect of making the sacrificial layer 2 have a uniform film thickness per field.

t U 1 2 8 J 25 201241134 In addition, this is a case where the substrate is used as an example. 情形 "In the case, for example, a wiring board and a circuit board can be used. The method for processing the substrate of the present invention is described in the following embodiments. [0130] For example, each constituent material contained in the temporary fixing agent may be replaced with any one of the functions capable of pinching the same drawing, or addition. Any constituent. The same applies to the processing method of the substrate of the invention, and any step can be added as needed. L U 1 3 1 In the second embodiment of the present invention, the temporary fixing agent used in the second embodiment of Hi: will be described. <Temperature Fixing Agent> Supporting the base material to be temporarily fixed to the base material after processing in order to process the coffin, and heating the base material to form the base material Carbon __ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The state of the substrate forces the substrate to open 1

After heating, the material can be detached or vaporized, and the substrate can be detached from the I. [0134] Hereinafter, the components constituting the resin composition containing the fascinating component are sequentially described. [0135] The resin component is temporarily fixed (substrate At the time of processing, the substrate is fixed to 26 201241134. The temporary fixing agent is thermally decomposed by the above-mentioned heating, and is low-stretched (four) melted or emulsified to reduce the bonding strength, so that it has a function of allowing the substrate to be detached from the supporting substrate. % [0136] The resin component is composed of the material of the present embodiment. [0137] A polycarbonate resin may be used as a main component, such as the polycarbonate resin, and the substrate may be detached after processing of the substrate under a non-oxygen oxime atmosphere formed by an oxygen concentration as described later. When the substrate is supported, the conductivity of the conductive portion formed on the support substrate side of the substrate can be suppressed from being lowered, and the substrate can be easily separated from the support substrate. The polyacrylate resin is not particularly limited, and examples thereof include a polypropylene carbonate resin, an ethylene carbonate resin, a hydrazine, a 2-polybutylene carbonate resin, an anthracene, a 3-polybutene carbonate. Ester tree=, 1,4-polybutene carbonate resin, cis-2,3-polybutylene carbonate resin, trans-2,3-olefinic resin, α,β-polyisobutylene carbonate resin, α,γ-polyisobutylene carbon' acid, glycerin, cis-1,2-polycyclobutene carbonate resin, trans-丨, 2_polycyclobutene carbonate=lipid, cis-1,3 - Polycyclobutene carbonate resin, trans-丨, 3_polycyclobutene carbonate tree, polyhexene carbonate resin, polycyclopropene carbonate resin, polycyclohexene carbonate resin: 1,3 - Polycyclohexane carbonate resin, poly(methylcyclohexene carbonate) resin, poly(ethylenecyclohexene carbonate) resin, polydihydronaphthalene carbonate resin, polyhexahydrostyrene carbon ruthenium resin, poly Cyclohexene carbonate propyl ester resin, polystyrene carbonate resin, poly(3-phenylene carbonate, propyl) resin, poly(3-trimethylphosphonium oxylate) resin, poly(3-methyl) Propionate propionate Polyperfluorocarbonate propyl ester resin, polyhydrazine, carbonate resin, polynordecane carbonate resin, exogenous (drinking)_polypentene carbonate 1 lipid, inward (endo)-polynorthene carbonate In the case of the above-mentioned or a combination of two or more kinds, it is possible to use one or a combination of two or more of them. Further, a polycarbonate resin, for example, a polypropylene carbonate/polycyclohexene carbonate, a total of 27 201241134 3'1 / a polycondensed carbonated copolymer, a clustered base i Alkoxy _5_neene_2_inward-3-endo 5 oxy-siloxy dimethyl butyl sulphonate) (oxygen succinct introverted two lions, poly [(oxygen) Alkyloxy group "A negative odor burning = _ (milk-based silk-oxy-p-xylene)] resin, and poly [(oxygen Γ 3 ^ Τ P soil P, mountain - Γ 土丁院) _alt_ (oxy group The oxo-p-quinone benzene) resin and the (4)-polycyclohexene monocyclic ring are not included in the carbonaceous structure, and the fixing agent is used in this case, and the adhesion of the substrate is excellent. Further, by temporarily refining the temper, the resin will be thermally decomposed and reduced in molecular weight, thereby forming a structure of [0142], which is a multi-ring thermal decomposition of copper which is connected to each other. [0143] The carbonated brewing unit is preferably a 5-membered ring or a 6-membered ring. This allows the [10144] to be more stable to the solubility of the solvent. It is better to be more satin. Alicyclic compounds such as heart port prime 'purpose polyethylene resins in two g, carbon _ purpose of constituting units 28,201,241,134, especially good structure for example, represented by the following chemical formula (1X) by [0146] --〇

(IX) Further, a polycarbonate having a carbonate structural unit represented by the above formula (IX), a resin, a side decahydronaphthalenediol, and a polycarbonate such as diphenyl carbonate are obtained by polymerization. '' 【0148】 Alcohol and H described i匕? In the carbonate constituent unit represented by the formula (lx), decalin is a carbon naphthene which constitutes a decahydronaphthalene (that is, a carbonaceous material is formed between the condensed polycyclic structure and a carbon Therefore, it is possible to control the heat resistance of the pyrocarbonate tree during the thermal decomposition of the tree, and shorten the [0149]. This makes the solubility of the solvent and the grain more stable. It is represented by the following chemical formulas (ια) and (ιβ).

〇 ^ I! 〇—C (IB) 〇

II 0 - c~ 29 201241134 Further, most of the cyclic body ' may be a heterolipid compound in addition to the alicyclic compound. When each of the j-like bodies is a heterolipid% compound, the fruit can be more prominently expressed as the fruit of the fruit [0152]. In this case, in the polycarbonate resin, the carbonate component is, for example, the following. The chemical formula of the column (2Χ) is represented by ., and the mouth set [0153]

(2) The poly-based resin having the carbonate structural unit represented by the above chemical formula (2Χ), and an ether diol represented by the following chemical formula (2a), and a carbonic acid such as carbon dioxide Obtained by the polycondensation reaction of an ester. , —本 [0155]

HO /^〇Η

(2 a) 0 15 6 In the carbonated constitutive unit represented by the above chemical formula (2X), the cyclic ether diol represented by the above chemical # a) has a hydroxyl group preferably two rings of each structure. ) Other carbon ί : ί= The heat resistance of the solidifying agent and the shortening of its composition make the solubility of the bath more stable.丹者【0 15 7】 'Miso-salt (isosorbide) type represented by the scorpion-style (2A), or the following chemical formula (2B) 201241134 ganol (dehydrated mannose) Alcohol (isomannide) type. Expressed as 1,4: 3,6-two dehydrated> 〇 【0158】

[0159] The weight average molecular weight of the polycarbonate resin is edited! , 〇〇〇-〇〇〇〇〇〇 is better than 5,0^8G^GG. The effect of the waviness on the moisture permeability of the supporting substrate can be obtained by making the weight average molecular weight of the lower limit a ', and the film forming property can be obtained. Further, by setting the upper limit to the lower limit, it is possible to obtain more remarkable effects for each of the engravings and the heating (4) and gasification due to the heating of the temporary coffee. The polymerization method of the "polycarbonate-based resin" is not particularly limited, and for example, a known polymerization method such as a calendering method (solvent method) or a transesterification method (melting method) can be used. Further, the resin component is preferably 10% by weight to 丨 (8) by weight of the total amount of the resin composition (when the solvent is a full range other than I / gluten). The ratio blending is preferred. More preferably, the ratio is more than 50% 畺/〇, and particularly preferably 8% by weight to 1% by weight. When it is 1% by weight or more, and particularly preferably (10% by weight or more), it is possible to reduce the effect of the temporary heat: the filament after thermal decomposition of the fixing agent. In addition, the amount of the tree scorpion in the composition of the composition is increased, and the temporary fixing agent can be thermally decomposed in a short time [0162], and the resin component composed of the polycarbonate resin as the main material is used. , the thermal decomposition temperature is reduced in the presence of acid or test. (10) Among the polycarbene-based resins, '^ polypropylene carbon_, 1,4_polyalkenyl carbonate, u•polycyclohexanoic acid/polyethylene carbonate copolymer is considered to be The decrease in the temperature of thermal decomposition is more pronounced. 31 [0163] 201241134 In addition to the resin component composed of the main material, the resin component is composed of the active material ri, and the composition of the active agent is used to make the resin component (the polycarbonate component γ is the cause) When the "fixing agent is irradiated with active energy rays and the thermal decomposition temperature is lowered [0164] n ^ 吏 The temporary fixing agent (resin composition) contains the resin component of the polycarbonate resin, and because it is used for temporary solid (four) irradiation. The acid or the active agent 'will decompose the temperature due to the irradiation of the active energy ray', so that the substrate can be detached from the support substrate more easily by the % = port after the active energy ray irradiation. The effect of the LU 1 6 5 (active agent) agent as described above is due to the fact that an active substance such as an acid or a base can be produced by application of irradiation with an active energy ray. The function of the substance is a function of lowering the thermal decomposition temperature of the aforementioned resin component. [0166] The active agent is not limited to, for example, a light Ms generating agent which is produced by irradiation of 潍 energy, or The photo-detecting agent or the like is produced by irradiation of a therapeutic amount of radiation. [0167] The photoacid generator is not particularly limited, and for example, ruthenium (pentafluorophenyl) borate _4_methylphenyl [4-(1- Methyl ethyl)phenyl]-lock (DPI-TPFPB), ginseng (4-tert-butylphenyl) dredged-(five phenyl)borate (TTBPS_TPFPB), ginseng (4_t-butylbenzene) )) hexafluorophosphate (TTBPS-HFP), triphenylsulfonium trifluoromethanesulfonate (Tps_T〇' bis(4_3rd, phenyl) fluorene trifluorosulfonate (DTBPI-Tf) , three tillage (TAZ-101), triphenylsulfonium hexafluoroantimonate (TPS-103), triphenyl record double (perfluoromethane), imine (TPS-N1), one-( P-terpene butyl phenyl lock, bis (perfluoro fluorinated base), phenylene diamine (DTBPI-N1), triphenyl sulfonium, hexamethylene perfluorodecane sulfonyl methoxide (Tps ci ), 32 201241134 ^ 'The photo-detecting agent is not particularly similar, for example: 5_f base · dinitrogen Φ · 1. ί院, 1 < 2_ Shi Xiaoji benzoyl amine brewing base) Mi, etc., can be used It is better to use low-tree and its derivatives, etc. 1 is more 5 卞 -1,5-一鼠杂双蝶 3.0) 壬院 [0169] Quantity%^^舌ί树Fat f and the product (temporary fixative) the total amount of about 0.01 ~ brother weight points i melt viscosity stability to drop [0170] (four) ί 如 纽 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Due to the fact that the active material is reduced in the structure of the main component of the resin component, the thermal decomposition of the resin component is presumed. [0171] • In the Ϊ = fine-grained component, the acid _ resin of the resin The H+ of the photoacid generator shifts the polyacrylonitrile to the polar transition state, resulting in unstable two vinegar, carbonic acid extension _ fragment, =; carbonic acid formation between the inter-turns, thermal decomposition temperature tr chyle Form a fine ring structure. 【0 172】 33 201241134

(Sensitizer) Further, when the temporary fixing agent contains the above-mentioned active agent, it may contain a component having a function of exhibiting an active energy ray for a specific wavelength or increasing reactivity with the active agent. That is, sensitizer. The sensitizer is not particularly limited, and examples thereof include hydrazine, phenanthrene, [-fast], benzpyrene, fluoranthene, rubrene, hydrazine, and ketone (xanth〇). Ne), indanthrene, thioxanthene _9-ketone, 2_isopropyl_9H xanthene (thiox^thene), ketone, 4_isopropyl-9H-thioxan 〇xanthene)-9-ketone, 1-gas-4-propoxyxanthone, and mixtures thereof. The content of the sensitizer is preferably 1 part by weight or less, and 2 parts by weight or less, based on 100 parts by weight of the total of the active agent such as the photoacid generator and the photoradical initiator. Better. 34 201241134 [0176] The resin composition as described above may also contain other components as shown below. (Antioxidant) That is, the resin composition (temporary fixative) may also contain an antioxidant. The antioxidant has a function of preventing acid generation or preventing natural oxidation in the resin composition (temporary fixative). The antioxidant is not particularly limited, and it is preferably, for example, Ciba Fine Chemicals Co., Ltd., "Ciba IRGANOX (registered trademark) 1"76, and rCiba IRGAF(R) (registered trademark) 168". Further, other antioxidants such as "Qba Irganox 129" and "Ciba" can be used.

Irganox 1330", "Ciba Irganox 1〇1〇", "ciba Cyanox (registered trademark) 1790", "Cibalrganox 3114, Cibalrganox 3125", etc. The content of the antioxidant is more preferably from 0.5 to 5 parts by weight, based on the weight of the resin component (8) by weight, preferably from 0.5 to 5 parts by weight. (Additive) Further, the resin (temporary fixing agent) may contain an acid scavenger, an acrylic, an anthrone, a fluorine-based or vinyl-based coating agent, or an alkylating agent, if necessary. Wait. [0183], Shi Xi = the coupling agent is not particularly limited, for example: 3-glycidoxypropyltrimethoxyanthracene, 3-oxopropoxypropylmercaptodiethoxy Wei' 3_ Glycidoxypropyltriethoxyfane, p-styryltrimethoxydecane, 3-methylpropenyloxypropylmethyl-oxyl, 3-methylpropanylpropyl Trimethoxymethyl propyl ik propyl propyl decyl - ethoxy 11H methacryl methoxy propyl triethoxy sulphur 201241134 alkane, 3-propenyloxypropyl trimethoxy decane, N 2 _ ( Aminoethyl)_3_aminopropylmethyldimethoxycarbazide, N-2-(aminoethyl)_3-aminopropyltrimethoxy decane, N-2-(amino B 3-aminopropyltriethoxydecane, 3-aminopropyltrimethoxydecane, 3-aminopropyltriethoxydecane, N-phenyl-3-aminopropyltrimethyl Oxydecane, 3-propenylmethyldimethoxydecane, 3-mercaptopropyltrimethoxydecane'bis(triethoxypropyl)tetrasulfide, 3-isocyanatepropyltriethoxy One type or a combination of two or more types may be used. 〃 [0184] The resin composition (temporary fixative) can improve the adhesion of the substrate 盥 support substrate by including a decane coupling agent. [0185] Further, the diluent is not particularly limited, and examples thereof include a cyclic ether such as an epoxy ring or an α-oxide, and [methylenebis(4,丨_phenylenemethylene)]. One type or a combination of two or more types may be used alone or in combination with an aromatic «, 1,4-cyclo(10) dinonanol divinyl or a cyclic aliphatic vinyl ether compound. The grease composition (temporary fixative) can improve the temporary fixative property by including a diluent, and the hygroscopic property of the temporary fixative for the base material can be improved by the sacrificial layer formation step described later. [0 18 7] (Solvent) Further, the resin composition (temporary fixative) may contain a resin composition such as a solvent [0188], and the viscosity of the resin composition can be easily obtained by including a solvent (solvent) [0189] ^ f- ] f Ϊ-ί-ΐ ' ^^(mineral spirit)^# Alcohol scales, diethylene glycol monoethyl hydrazine, di-glycol-ether-夂-day, ethyl acetate, n-butyl vinegar, lactic acid Ethyl vinegar, 3-ethoxypropionic acid, B 36 201241134

Sa, propyl singer shouted acetic acid s, diethylene glycol mono (10) B _, carbonic acid propylene vinegar, γ _ τ. 酉 酉 vinegar / endogenous, cyclopentanone, cyclohexanone, methyl isobutyl ketone , 2-heptanone, etc. _ class, Μ-review: Μ: 〇., “τ Lane·2” N-methyl-2-pyrrolidone and other indoleamine/indoleamine can be used + 1 Kind or combination of two or more types. Thereby, the viscosity of the solidifying agent can be easily adjusted, and the sacrificial layer (ruthenium film) which is fixed to the support substrate can be easily formed. The content of the fan-scraping is not particularly limited, and is preferably 5 to 98% by weight, more preferably 10 to 95% by weight, based on the total amount of the resin composition (temporary fixing agent). [〇1 9 1] <Manufacturing method of semiconductor device> - The temporary fixing agent can be applied, for example, to a method of manufacturing a semiconductor device. [0192] The processing method of the substrate of the present embodiment using a temporary fixing agent can be applied to the processing of the semiconductor wafer in the method for manufacturing a semiconductor device. [0193] The processing of the substrate of the present invention is as follows. An embodiment of the method is described. The processing of the semiconductor wafer (substrate) includes the following steps: The first step is to support a semiconductor wafer having a functional surface having a copper-containing conductive portion. At least one of the supporting substrates of the semiconductor wafer is supplied to the temporary fixing agent to be dried to form an emulsion layer (film); and in the second step, the supporting substrate t and the semiconductor wafer are functional surfaces of the semiconductor wafer via the layer In the third step, the semiconductor wafer is processed on the opposite side of the functional surface; in the fourth step, the germanium layer is heated and the resin component is thermally decomposed to make the semiconductor wafer In the fourth step of the method for processing a semiconductor wafer of this configuration, the present embodiment is based on a non-oxidizing gas atmosphere having an oxygen concentration of 1 ppm or more and 3 〇 ppm or less. After the conductor wafer is detached from the supporting substrate, the semiconductor wafer is cooled. [0194] FIG. 1 is a semiconductor wafer 用于 37 for explaining a processing method of the present invention; 201241134 In the following description, in FIG. The side is described as a longitudinal section of the processing steps. The "upper" and lower sides are described as "lower". [0 19 5] The following steps are described in order. Further, the following sections describe semiconductor wafers and support. An example in which a support substrate is selectively formed into a sacrificial layer in a substrate. [0196] (Evaluation step of forming a layer) First, a support substrate 1 is prepared, and as shown in FIG. 1(a), on the support substrate (or base) The sacrificial layer 2 is formed on the material 1 by using the above temporary fixing agent (the second step). [0 19 7] The sacrificial layer 2' can be heated and dried by supplying the temporary fixing agent to the support substrate 1. It is easy to form. [0198] The softening point of TMA (Thermomechanical Analysis') of the sacrificial layer 2 formed here is not limited, and is preferably lower than ··c, preferably about 5 (M8 (rc is better.) f times step (fitting step) 'When heating the layer 2 as described below Time: This does suppress or prevent thermal decomposition of the resin component or deterioration or deterioration of the semiconductor wafer 3. [0 1 9 9]

^, TMA softening point is determined by the thermomechanical measuring device (TMA object (the layer 2) at a fixed heating rate, applying the solid 2 measurement, the phase of the object. In this specification, The point temperature is defined as the TMA softening point. Specifically, TMA "O400FM f, for example, a thermomechanical measuring device (TA Instruments)

5, when, for - stone # = degree J is determined by the temperature at which the phase begins to change. When the amount of 叩卿% is negative, measure [0200] heart L, the method of temporarily fixing the mineral on the support substrate 1 is not special (4), sweeping f coating method, spraying method, printing method, film transfer method, slit coating ^ Various methods such as the method, the coating method, and the like. Among these, the spin coating method is used in particular to form a more uniform and flat sacrificial layer 2 according to 38 201241134. For the time of the method, temporarily fix it and use its viscosity (25. 〇 about ~ [^ 2 〇 2a] · s is better, use about 1,000~50,000 mPa · s is better: τν4^ clarity r viscous meter ^The rotational speed is set to about [0204] so that the sacrificial layer 2 is formed by satisfying the conditions, and the average thickness of ^ΠΛ^ is preferably about 10 ΙΟΟμιη, and the thickness is about ir/^. The sacrificial layer 2 of the thickness can be made to have a viscosity of approximately 2 [0205] 1 (25 is determined as A [mPa · s] and the substrate furnace is supported by a special ^, A/B 〇.13~330 preferably '〇·5~100 is better. Thereby, ^ film:: flat thickness to form an average thickness of 50~1〇〇μηι of the sacrificial layer 2 [0206] strong 'supporting substrate 1 as long as It is preferable to have a degree capable of supporting the substrate 3. Thereby, when the temporary solid support substrate 1 side is penetrated, and the sacrificial layer μ is irradiated with the nano glass, the glassy olefin polymer-like polymer, the polyaxial axis (Matching step) Next, as shown in FIG. 1(b), a semiconductor wafer is placed on the surface of the support substrate 1 on which the sacrificial layer 2 is provided. 3, the functional surface 31 is placed on the sacrificial layer 2 side, and is thermocompression bonded in this state. Thereby, the semiconductor wafer 3 is bonded to the support substrate via the sacrificial layer 2 (second step). The bonding step 'is omitted in the same manner as in the first embodiment. [0209] (Processing step) The "man's" of the semiconductor wafer $ and the functional surface 31 fixed to the support substrate 1 via the salient layer 2 Processing on the opposite side (back surface) (third step). The processing step ' is also performed in the same way as the younger brother, so the details are omitted. [0210] (disengagement step), and secondly, as shown in Fig. (d), the resin layer 2 is heated and the resin component is thermally decomposed to reduce the molecular weight, thereby melting or vaporizing the layer 2, and then the semiconductor wafer 3 is detached from the support substrate 1 (step 4). [0211] In the embodiment of the present invention, the detachment step is performed in a non-oxidizing gas atmosphere having an oxygen concentration of 0 ppm or more and 3 〇 ppm or less, and the semiconductor wafer 3 is removed from the support substrate j. Cooling of the semiconductor wafer 3 is carried out. [0212] Here, according to the discussion of the inventors of the present invention, it is explained that: The vinegar resin is used as the resin component of the main material, and the thermal decomposition caused by heating will be increased at a higher concentration of oxygen. Conversely, when the semiconductor wafer 3 is heated to a high temperature, the oxygen concentration is further The semiconductor wafer 3 is detached from the supporting substrate, and the functional surface 31 is exposed from the layer 2 which functions as a protective layer. As a result, the copper is oxidized. [0213] 201241134 Heated the conductor wafer 3 gas ^ 1 can be smoothly carried out in the step-by-step cooling process. = Weidino is in the above-mentioned appropriate range, and the thermal decomposition caused by the heating of M is contained, and the above problems can be solved by suppressing the conduction of the neighboring neighbors. Z 1 4 】 The oxygen concentration of the following two non-ff gas atmospheres is set to be equal to or higher than alppm, 3Qppm, 7==5_ or more, and 25 ppm or less. The copper contained in the conductive portion is emulsified and the conductivity of the conductive portion is lowered. Shoudian 1 3 [0215] '. The layer 2 is preferably applied to a temperature of more than 2 〇〇 ° C, more preferably a force of 200 to 350 ° C, more preferably about 220 to 32 (TC TC. When the 、 、 、 、 、 、 、 2. The present invention can more reliably suppress or prevent the same. [0216] In addition, contrary to the heating, after the semiconductor wafer 3 is separated from the supporting substrate, the cooling of the body wafer 3 is preferably lower than 2GGt: More preferably, it is about (10) 叱, and preferably about 120 to 180 ° C. By this, even if the semiconductor wafer 3 is placed in an oxidizing gas atmosphere after cooling, it can be more reliably prevented from being induced. Oxidation of steel in part f. [0217] Non-oxidizing gas atmosphere, for example, a passive gas atmosphere such as nitrogen or argon, a reducing gas atmosphere such as hydrogen or carbon monoxide, or a reduced-pressure gas atmosphere Among these, a passive gas atmosphere is preferable, whereby the oxygen concentration in the gas atmosphere can be set within the above range by a simple operation of flowing a passive gas into the chamber. / [0218] 201241134 ± Heating the temperature of the layer 2, specifically, setting it as a polycarbonate resin The temperature at which the resin component of the material is thermally decomposed and the temperature at which the semiconductor wafer 3 is deteriorated or deteriorated is preferably set to about 2 〇〇 to 35 〇 c»c, more preferably about 220 to 320 〇 C. [0219 Here, in the present specification, the detachment refers to the operation of the semiconductor wafer 3 from the support substrate i. This operation specifically does not relate to the case where the sacrificial layer 2 becomes a molten di-state or vaporization', for example: This operation is, for example, a method of detaching the semiconductor wafer 3 in a direction perpendicular to the surface of the support substrate 1, or detaching the semiconductor wafer 3 in a horizontal direction, and sliding the surface of the substrate 1 in a horizontal direction. The method, or as shown in the figure: the floating circle 3 is floated from the support substrate 1 from the one end side of the semiconductor wafer 3

[0 2 2 0J Further, when the sacrificial layer 2 is vaporized by the aforementioned heating step, the semiconductor wafer 3 and the supporting substrate are! The sacrificial layer is removed between the layers to facilitate the detachment of the semiconductor wafer 3 from the support substrate 1. This Hong Yi Dijin

[0 2 2 1J As described above, it is possible to prevent or suppress the copper-containing conductive portion from being inhibited from lowering the conductivity of the conductive portion by the (4) gas within the appropriate range. /,,,β [0222] (Washing step) Secondly: in the above-mentioned disengagement step, by heating the layer 2, the sacrifice is a secret, or the touch layer 2 of D has been removed from the functional surface. The method of removing the residue of the layer 2 of the remaining layer is not particularly limited, and examples thereof include an immersion treatment, a polishing treatment, and a heat treatment. .Electric water treatment, liquid liquid [0224] 42 201241134 For the Gu Shi form 'in the formation step of the + layer + ' system to form the sacrificial layer 2 iiSSL1 is not limited to this, can also be selective support substrate 1 and semiconductor wafer 3 The substrate 1 is formed to be _2, and the back surface of the semiconductor wafer 3 is processed in the above manner. The lingual layer (resin composition) 2 contains an active agent, whereby when the resin component becomes a thermal decomposition low temperature due to the sudden irradiation, the process may be carried out before the heat removal step. The following active energy ray irradiation steps. (Active Energy Ray Irradiation Step) In this step, the active energy ray is irradiated to the eucalyptus layer 2. [0227] The fraction, the ί mu layer (resin composition) 2 contains: the resin having a reduced thermal decomposition temperature, the uniformity of the ship, the active energy ray, the acid or the test, and the temporary fixative (resin composition) The active agent contained in the agent imparts an activity agent such as an acid or a base, and the thermal decomposition temperature of the component of the tree scorpion is lowered by the action of the active material. [0228] For example, before the heating of the sacrificial layer 2, by first irradiating the active layer 2 with active energy, the spring is enough to reduce the heating temperature when heating the layer 2 or shortening the twisting time, etc. heating. As a result, it is possible to more reliably suppress or prevent deterioration and deterioration due to heating of the burdock body. [0229] 'μ ^ / tongue ray is not particularly limited' is preferably, for example, a light having a wavelength of about 200 to 800 nm, more preferably a light having a wavelength of about 300 to 5 〇〇 nm. [0230] 1 Λ τ and then f, the amount of irradiation of the active energy ray is not particularly limited, and is preferably m cm 2 / 2 〇〇〇〇 mj / cm 2 '. r^ 3 43 [0231] 201241134 In the f-state, the f-state selectively forms the salvage layer 2 on the support substrate 1, but this is formed by the flat surface to form the support substrate i. The effect of the animal layer 2. In the case where the semiconductor wafer 3 is used as the substrate, for example, in the case of 0*2^, for example, a wiring board, a circuit board, or the like can be used. The method of processing, according to the level of the processing of the level [0 2 3 4] function Γ or the various constituent materials included in the same can be used to achieve the same ί i : 月 月 月 月 月 月 月 月 月 月 月 月 月 月 月 月 月 月 月 月 月 月 月 月[0235] The following describes the specific examples corresponding to the first embodiment of the present invention. 1. Preparation of temporary fixatives The temporary fixatives of Sample Nos. 1A and 2 listed below are prepared. LU 3 6 1 [Sample No. 1A] <5-fluorenylpyrene polymer> Son was introduced into a reaction vessel which was dried in a dry state, and was introduced with ethyl acetate 430 §, cyclohexan produced g, and 5-hexyl group (four) 22 Chat. 95 Moh). For the department, it is 4〇. = 雔 (All 簸茇 ^ ^ 后 后 后 后 后 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 糸 糸 糸 糸 糸 糸 糸 双 双 双 双 双 双 双 甲苯 甲苯 甲苯 甲苯 甲苯 甲苯 甲苯 甲苯 甲苯 甲苯 甲苯 甲苯 甲苯The temperature was raised to 55 ° C at 40 ° C, and the temperature was maintained, and the mixture was stirred for 3 hours in the anti-44 201241134 system. [0237] _ 3% by weight of hydrogen peroxide water was added to the solution obtained, and added to pure water about 15 〇〇g was dissolved in a solution of glacial acetic acid (26 g), and the separated aqueous layer was removed by stirring at 5 (TC for 5 hours.) The tax was mixed [0238] Adding to the remaining organic layer ~ stirring #~ removing the mixed methanol 2 And the isopropyl alcohol g is washed by this. In addition, 'the addition of cyclohexane and ethyl acetate 290g' in the washing powder is uniformly dissolved, then adding ~ stirring ~ removing the mixed 167g with isopropyl alcohol, borrow This washing strip (repeated 2 times). [0239] - Adding cyclohexane 18 〇mi to the organic layer after washing, uniformly dissolving the system, adding 670 g of rice, and evaporating with a red-transfer evaporator under reduced pressure. , 癸 癸 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ ' [0241] <Preparation of temporary fixative> = 35% of the above-mentioned 5 癸 癸 降 坎 聚合物 聚合物 聚合物 〇〇 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 The concentration of 3〇% is temporarily fixed [0 2 4 2] ^ Again, the viscosity of the temporary fixative of the sample No. 1A (^. (^ is 1〇, 〇〇〇mPa· [0243] [sample Νο·2Α] <5_癸基降莰埽/5-Hexyl Reduced Rare=50 Mole%/5〇Mole% Copolymer Synthesis>

S is introduced into a fully dried reaction vessel to introduce 43 〇g of ethyl acetate, 'g hexane 'g, 5-mercapto group to reduce lean mg (〇48 mol), and 5 hexyl _ 8_.48 mo 45 201241134, Face to face. After that, dissolve in acetic acid (10)12/=) double moire) 5rc «.4i;3 ;;^ 40^>si about 1500^ dissolved with glacial acetic acid 26^^ plus ==^ hydrazine water 49g, water mixed, removed Separated water layer. After stirring for 5 hours, stop stirring [0245] Add ~ 曰 曰 and ethyl acetate _g to the remaining organic layer, _ rotation g ^ % with isopropyl alcohol to remove the 4Ml56g [0246] After adding the organic layer after washing, cyclohexane was added at 18 Gm = under a rotary evaporator, and the ring was ==================================================================================== 5_癸基降(四)/5_ 漏莫耳. Weight average molecular weight of /〇 copolymer, Mo [0248] ' <Preparation of temporary fixative>> The above obtained 5_癸 scale_/5_己舞_ = 5()mol %/5 ear % 35% of the copolymer has a tri-nose of 30% as a temporary fixative for the resin concentration. ^ ^ [0249] The viscosity of the temporary fixative of the sample Ν〇.2Α(25.〇25,000mPa · 46 [0250] 201241134 [Table 1]

Viscosity of temporary fixative [mPa-s]___ olefin polymer 1:5-fluorenyl drop-reducing olefin polymer 2:5-filt drop _/5_hexyl-reduced women = 5 〇 mol% / copolymerization The object vector '1' 々 [0 2 5 1] 2. The back surface of the semiconductor wafer is processed. The following is performed on the back surface of the semiconductor wafer using the samples N〇lA and 2A as shown below. [Example 1A] First, using a spin coater, coating a sample in 8 吋 transparent glass] ^ 〇 1 八 、, 2, agent (rotation speed, l, 〇〇〇 rpm, time: 3 〇 seconds) 'Secondly, the sputum was measured on a hot plate by using a thermomechanical measuring device ("Q400EM", manufactured by ΤΑ Instruments Co., Ltd.) The softening point of the film is 9 (rc. ”, 疋 0 [0 2 5 4 J-, sub-use substrate adapter (model SB-8e, suss Microtec company, #" It is temporarily fixed at 8 time by the temporary 111 fixer _ film: (gas atmosphere: 1 〇 2 mbar, temperature: 14 〇 C > C, dust force: 0.32 MPa, knife y. [0255] Again, the 8 For the wafer, a surface having a thickness of 725 μm and a side in contact with the film S. 47 201241134 is provided with a plurality of wires composed of copper having a pitch of 5 μm, a width of 50 μm, and a height of 1 μm. <3> Next, the bottom of the semiconductor wafer is ground using a grinding insert ("DFG854", manufactured by DISCO Corporation) for the wafer which is temporarily fixed to the transparent glass. (The back surface is ground for processing, and the thickness of the semiconductor wafer is 145 pm. [0 2 5 7] <4> Secondly, 8 吋矽 wafers will be temporarily fixed in 8 吋 transparent glass. The heat treatment was carried out under a nitrogen atmosphere at a predetermined oxygen supply, temperature and time, and thermal decomposition of the temporary fixative was carried out. [0258], d: The solid enthalpy was applied at 32 Torr under a nitrogen atmosphere having an oxygen concentration of 1 〇 ppm. The inlet 30 is heat treated to perform thermal decomposition. [0259]: The sample is taken out of the chamber after the glass is r 7 p to 180 c ' [0 2 6 0 ] ^ [Example 2A, Comparative Example, 2A] The type of temporary fixative, the film forming conditions, and the above steps are changed to the conditions such as deletion, and the back of the circle is added. The outer and the other are "the same as 1A, the implementation of Shi Xijing [0261] 3. The discoloration of the copper wiring Evaluation color, according to the following ^ 彳 obtained 8 'wafer copper wiring change [0262] 疋 〇 observed the same color as the untreated copper wiring. 48 201241134 χ: observed compared to the untreated copper wiring tape The results of the evaluation of Example 2, 2A and Comparative Example 2, 2A are shown below. 0263] [Table 2]

[0264] As shown in Table 2, in each of the examples, - in the appropriate range, it can be confirmed that the oxygen concentration when the wafer is detached is set to [0 2 6 5] The oxygen of the thin wire formed by the wafer 49 201241134 In contrast, in each of the comparative examples, since the ruthenium wafer was not detached, the oxidation was considered to be remarkable. The eye also recognizes [0 2 6 6] and says that it is made of the second actual fine state of the present invention. Example 1. Preparation of temporary fixative First, a sample of the following sample is prepared. 2 暂时 temporary fixative. [0 2 6 7] [Sample No. 1B] <Synthesis of 1,4-Polybutylene Carbonate> Adding 1,4_丁二 to a three-necked flask equipped with a stirrer, a raw material addition port, and a nitrogen gas introduction port Alcohol (I68g, 1.864 mol) and diethyl carbonate (264.2 g, 2.236 mol) were heated to 90~1 Torr under a nitrogen atmosphere, and the mixture was dissolved. [0 2 6 8] Next, 20% ethanol sodium ethanol solution (10 ml ml, 0 186 mol) was added, and then mixed under a nitrogen atmosphere at 90 to KXTC for 1 hour. Thereafter, the pressure in the reaction vessel was reduced to about 30 kPa', stirred at 90 to 10 ° C for 1 hour, and 12 (TC was stirred for 1 hour. Then, under a vacuum of 0.1 kPa, stirring at i5 ° C for 1 hour. The mixture was stirred at i8 ° C for 2 hours. [0 2 6 9] The reaction product obtained above was dissolved in tetrahydrofuran (2 L), and filtered to remove the catalyst residue. Then the filtrate was poured into steam/sterol Solution of =1/9 (2〇L) 'The precipitate was recovered and washed thoroughly with a solution of distilled water/sterol = 1/9 (1 〇L) to obtain 125 g of hydrazine-polybutylene carbonate (yield 48). The weight average molecular weight of the synthesized 1,4-polybutene carbonate was measured by GPC, and as a result, it was 35,000. [0271] <Preparation of temporary fixative> 100g of vinegar, Rhodorsil as active agent

Ph〇t〇initiat〇r2074 (FABA) (Rh〇dia japan) κΜοΜ 50 201241134

Photoinitiator 2074) 5 g, as a sensitizer, 1-chloro-4-propoxythioxanthone (SPEEDCURE CPTX (trade name) manufactured by Lambson Co., Ltd.) 1.5 g dissolved in anisole (solvent) 393.5 g to prepare a resin concentration of 2暂时% of the sample No. lB temporary fixative. [0272] Further, the viscosity of the temporary fixing agent of the sample No. 1B (25. 〇 is 3,000 mPa.s. [0273] [Sample No. 2B] <Synthesis of isosorbide type polycarbonate> Separate isosorbide 102.01g (0.698 mol), diphenyl carbonate dip 149.53g (0.698 mol), carbonic acid absolute. 〇〇23g (6.98><10-6 mol) Then, the first step of the reaction is placed in a reaction vessel under a nitrogen atmosphere in a heating bath heated to 120 C, stirred to dissolve the raw material, and stirring is continued for 2 hours. Second, the reaction is carried out. In the second step, the pressure in the reaction vessel was reduced to 10 kPa' and the mixture was continuously stirred at 120 C for 1 hour. Next, in the third step of the reaction, the pressure in the reaction vessel was reduced to 〇.5 kPa or less, and stirring was continued at 12 (TC). 1.5. In the fourth step of the reaction, the pressure in the reaction vessel is maintained at a pressure of 〇5 kPa or less. It takes about 30 minutes to raise the temperature of the heating bath to 18 ,, and then to 18 〇〇. c Continue to mix for 1.5 hours. In addition, 'the phenol crane produced in the second to fourth steps of the above reaction is removed to the reaction volume. [0274] After the pressure in the reaction vessel was returned to normal pressure, 1.2 L of γ-butyrolactone was added to the obtained reactant to dissolve the product. Secondly, isopropanol/water = 9/1 was stirred. (v/v) The mixed bath is in the state of 12 L, and the solution in which the product has been dissolved is added dropwise. Secondly, the precipitate which precipitates is recovered by suction filtration, and the precipitate precipitated is isopropanol/water = 9/1 (^ After the mixed solution was dissolved in 4 L of the day and night, it was recovered by suction filtration. The recovered precipitate was dried in a vacuum dryer at 80 C/18 hours to obtain the isosorbide s〇rbide type polycarbonate represented by the above chemical formula. The ester powder was 123.15 g (yield 100%). The weight average molecular weight of the synthesized isosorbide type polycarbonate was determined by GPC to be 45,000.

S 51 201241134 [0 2 7 6] <Preparation of Temporary Fixing Agent> GSID26-l (Ciba Japan Co., Ltd.) using isosorbide type polycarbonate 1500g as an active agent (photoacid stimulating agent) 2.0 g of γ-butyrolactone was dissolved in 198.0 g to prepare a temporary fixing agent having a resin component concentration of 33% by weight. [0 2 7 7] Further, the viscosity of the temporary fixing agent of the sample No. 2B (25. 〇 is 22,000 mPa · [0 2 7 8] sample 1 Β sample Νο. 2 Β blending [parts by weight] resin composition resin Ingredients 1,4-polybutene carbonate 100 isosorbide type polycarbonate 100 active agent Rhodosil Photoinitiator 2〇74 5 GSID26-1 2 sensitizer 1-chloro-4-propoxy η ton ton 1.5 solvent benzoquinone Ether 393.5 γ-butylenase 198 Total 500 300 Viscosity of temporary fixative ImPa.y 3,000 22,000 [Table 3] [0279] 2. Backside processing of semiconductor wafer Next 'The following method' uses each sample No.ib, The temporary fixing agent of 2B was processed on the back surface of the semiconductor wafer. [Example 1B] <1> First, the temporary fixing agent of sample No. 1B was applied to 8 吋 transparent glass using a spin coater ( Rotation speed: 500 rpm, time: 30 seconds), followed by pre-baking (drying) on a hot plate at 12 〇 (:, 5 minutes, forming a film of a temporary fixing agent structure 52 201241134 having a thickness of 2 〇 μπ1 (犠 层 layer) [0281] Also 'using a thermomechanical measuring device (TA Instruments, r Q4〇〇EM") The TMA softening point of the film was measured, and as a result, it was 7 Å. [0282] <2> Secondly, 'using a substrate bonder (model SB_8e, suss Micr〇tec)') A film made of a temporary fixing agent temporarily fixes an 8 o'clock Shihwa wafer in 8 忖 transparent glass (gas atmosphere: l (T2 mbar, temperature: 120 ° C, load: (1) version, time: 5 minutes)., [0283 In addition, the 8-inch wafer is made of a thickness of 725 μm, and a plurality of wirings made of copper with a pitch of 5 (), width, and height are provided in the direction of the side of the contact film. 0 2 84] times, the bottom surface (back surface) of the semiconductor wafer was "cut" using a grinding = ISCO company, "DFG8540" for the wafer that was temporarily fixed on the transparent glass, so that the thickness of the semiconductor wafer was 145 μm. <4> Next, 8 Å wafers were temporarily fixed in 8 吋 transparent glass to obtain a wafer, and the oxygen concentration, temperature, and time were heat-treated under a nitrogen atmosphere to carry out a temporary fixing agent. Thermal decomposition. [0286] * Also, the temporary fixative is at an oxygen concentration of 10 Heat treatment in 2 lines for 30 minutes under a nitrogen atmosphere of ppm to carry out thermal decomposition. [0 2 8 7], <5> Next, a chamber in which a sample having undergone thermal decomposition is disposed, = gas atmosphere state, In the gap between 8 忖 transparent glass and 8 willow wafer = = 8 o'clock in the implementation of the Shihwa wafer after the month of 'cooling to, then take the sample 10288 from the chamber]

A 53 201241134 [Cross-in Example 2B, Comparative Example IB, 2B] The type of the temporary fixing agent used in the above step <1>, the film forming condition, the step temporary fixing condition, and the heating sacrificial layer of the above step <4> The conditions of the time are shown in the same manner as in the above-described first embodiment except for the above, and the lunar surface processing of the Shixi wafer is carried out. [0289] 3. Evaluation of Discoloration of Copper Wiring The above-mentioned step <5> obtained by visual observation was visually observed on the basis of the following criteria. [0 2 9 0] 〇: The discoloration of the copper wiring of the wafer opposite to the untreated steel wiring was observed. 4 〇X. It is observed that the IB, 2 专 will be compared with the untreated copper wiring tape. And Comparative Example 1 Β,, [0291] ^ 癸 莰 莰 莰 聚合物 聚合物 聚合物 聚合物 Β Β Β Β Β Β Β Β

Temporary Fixing Agent Thin Film Characteristics Film Forming Strip Sample No. Viscosity Film Thickness [μιη] Softening Point of Film [°c] Substrate Speed [rpm]

Temporary fixative heating temperature rc] Piece Heating time [minutes] Wafer Heating temperature [°c] Temporary heating temperature - softening Fixed point fc] Condition ------ Load [kNJ 54 201241134

Time [minutes] 5 5 ~----- 5 Wafer detachment condition i concentration 丨ppm| 10 10 ——1 5 2,000 2, 加热 detachment heating temperature VC]__ 200 200 200 200 Others [minutes] 30 30 30 30 ^ 卩 temperature [°C1 color change of steel wiring 180 " 〇~~~~ 180 evaluation result 180 180 _ X ~~ ~~- -J [0292] As shown in Table 4, in each embodiment, When the silicon wafer is detached, it can be used to suppress the copper n formed by the circle and is [0 2 9 3]. For this reason, the comparative wafers are not separated from the wafer. Appropriate _, so the result is that the oxygen of the steel turns. [degree of sigh] [Industrial Applicability] [0294] According to the method for affixing the substrate of the present invention, the substrate 3 is placed in a state of being temporarily fixed on the support substrate. It is possible to surely prevent or suppress oxidation of steel contained in the conductive portion of the substrate. As a result, it is possible to suppress the effect that the conduction y is high. [Simple description of the diagram] 0 0 3 0 Figure Addition of the invention to the wire of the invention plus 4 method of the semiconductor crystal [main symbol description]

S 55 201241134 [0 2 9 6] 1 Supporting substrate 2 犠 layer (film) 3 Semiconductor wafer (substrate) 31 functional surface

Claims (1)

201241134 VII. Patent application scope: 1. A processing method for a substrate, characterized in that: the following steps are included: Step 1 'Complete the resin consisting of a resin component containing a fine resin or a polycarbonate resin as a main material. The temporary fixing agent of the material is formed by drying a substrate provided with at least one of a substrate having a functional surface containing a conductive portion containing copper and a supporting substrate for supporting the substrate; The film is bonded to the support substrate with the functional surface on the side of the support substrate. In the third step, the surface of the substrate opposite to the functional surface is processed. And, in the fourth step, Shida heats the ruthenium film to release the substrate from the support substrate; and in the fourth step, the substrate is detached under a non-oxidizing property of an oxygen concentration of 30 ppm or less. After the support substrate, the substrate is cooled. , 3· 2' = the method of securing the substrate of the patent application range i i 'where' the resin is formed by using a ash-reducing resin as a resin component of the main material. The method for processing a substrate according to the second aspect of the invention, wherein the resin component is thermally decomposed and smelted or vaporized by heating of the film in the fourth step 4, and the substrate is detached. The support substrate. The method of processing a substrate according to Item 2 or 3 of the patent, wherein the film is heated to a fineness. And a method for affixing the substrate to the support of the substrate of the second aspect of the invention, wherein the substrate is detached from the support substrate, and the substrate is removed from the support substrate. The method for affixing a substrate of any one of the items, wherein the substrate is selectively supplied to the substrate and the support substrate in the support substrate, such as ___ _ 57 6. 201241134 The method for processing a substrate according to any one of items 2 to 7, wherein 'the first turn' is made into a thin ship having an average thickness of 1 G to 1 mm. 9. The method for processing a substrate according to the first aspect of the invention, wherein the resin component is a resin component of a poly- and an acid-based resin as a main material, and in the fourth step, a non-oxidizing gas atmosphere is used. 〇lppm or more, in a non-oxidizing gas atmosphere at a concentration. 10. The method of processing a substrate according to claim 9, wherein the film is heated to 2 () or more to cause the substrate to be detached from the support substrate. 1L ί or 1G a processing method of a substrate, wherein, after the substrate is cooled, the substrate is cooled to a processing method of the substrate of any one of the following claims: ί Oxidizing gas atmosphere riding a blunt seam (4) Atmosphere: ί 'to 12 items of the substrate processing method, in the basin: in the step 41 'for the substrate and the supporting substrate ancient ' Optionally, the temporary fixing agent is supplied to form the film. Field ~ 14. The beauty of any one of claims 9 to 3 is #^: the degree of the film forming the film to make it 15. ^ The base material of any one of the items 9 to 14 of the patent range, wherein the resin component is lower in thermal decomposition temperature for the temporary fixing agent, and the active energy ray is irradiated on the film in the fourth step. First, for 5 hai> special 16. Please refer to the processing method of the substrate of the fifteenth patent range, L or the thermal decomposition of τ By reducing the degree and ΐί ί composition further comprises the irradiation of the active energy ray to generate an acid or 58