TW201246280A - Semiconductor wafer with adhesive layer, fabricating method of semiconductor device and semiconductor device - Google Patents

Semiconductor wafer with adhesive layer, fabricating method of semiconductor device and semiconductor device Download PDF

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Publication number
TW201246280A
TW201246280A TW100144085A TW100144085A TW201246280A TW 201246280 A TW201246280 A TW 201246280A TW 100144085 A TW100144085 A TW 100144085A TW 100144085 A TW100144085 A TW 100144085A TW 201246280 A TW201246280 A TW 201246280A
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TW
Taiwan
Prior art keywords
resin
adhesive
adhesive layer
semiconductor wafer
bis
Prior art date
Application number
TW100144085A
Other languages
Chinese (zh)
Inventor
Shuichi Mori
Original Assignee
Hitachi Chemical Co Ltd
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Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW201246280A publication Critical patent/TW201246280A/en

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    • HELECTRICITY
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    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Abstract

This invention relates to a semiconductor wafer with an adhesive layer which includes: a semiconductor wafer and an adhesive layer formed on a surface of the semiconductor wafer, and the adhesive layer is formed inside the circumferential portion. This invention also relates to a fabricating method of a semiconductor device which includes: a step of forming an adhesive containing adhesive layer on a surface of a semiconductor wafer at a position inside the circumferential portion and a step of converting the adhesive layer to B-stage.

Description

201246280 4U873pif 六、發明説明· 【發明所屬之技術領域】 本發明是有關於一種附接著劑層的半導體晶圓、半導 體裝置的製造方法及半導體裝置。更詳細而言是有關於一 種作為將1C、LSI等半導體元件與引線框架、絕緣性支撐 基板等支樓部件、或者半導體晶片彼此之間積層時的接合 材料(晶片接合材料)而使用的晶片接合用附接著劑層的 半導體晶圓、使用該附接著劑層的半導體晶圓的半導體裝 置的製造方法及半導體裝置。 、 【先前技術】 寻千等體元件與支撐部件之接合 料、或者半導體晶片彼此之間積層時的接合材料,已知肩 醯亞胺樹脂之接著膜、於特絲醯亞胺樹脂 性填:或無機填料之晶片接合用接著膜。 半導體穿置的ΓΪΙ於半導體晶圓上總括進行如上所述1 牛導體裝置的組裝步驟而使其效率化 傾向:隨著半導體晶片之藉屉, 且存在如下# 叙If况下應用使用接著 予又^化 片接合用接著_步驟。 W糟由旋塗法而塗佈』 層墨著舉:於半導體晶圓之整個面』 =亍單片化,將塗佈有接著媒由切割步驟而 基板或半導體晶片上的方法。牛導體曰曰片貼附於半導體 於半導體晶圓之整個面上塗 轉接讀的方法廣泛已知 4 201246280 有旋塗法,亦即藉由高速旋轉於半導體晶圓 塗佈液狀接著劑。 個面上 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2_-98213號公郝 [專利文獻2]日本專利特公平5-54脱號公報 然而’於使用接著膜之情科,於層壓 中,容易產生晶圓以外之部分的接著膜之浪費。而H 使用旋塗法而將液狀接著·佈於半導體晶圓 ; 情形時’液狀接著劑擴展至半導體晶圓之端部 之 =之效果,接著劑層容易於端鲁由此而 劑層之均-性,於層壓切割膜時容易捲人氣泡 ^切割步驟中,引起晶片飛鱗問題的現象。而且,匕= 著劑層之厚度不均-,則於切難之層壓步驟中: 體晶圓所施加之荷重變得不均―,因此特狀 導體晶圓中有時產生破損之現象。 、 【發明内容】 本發明是繁於上述事實而成者,其目的在於提供 -之膜厚而於半導體晶圓上形成接著__接著•的 半導體晶圓、使用該附接著㈣的半導體晶圓二 置的製造方法及半導體裝置。 4 本發明提供一種附接著劑層的半導體晶圓,1包人 導體晶圓;·及形成於該半導體晶圓之其中—個I的^ 劑層,該接著劑層形成於半導體晶圓之周緣部之更内側。 201246280 40873pif 丁入—」疋上迷接著劑 的接著劑。 於主ϋ明還提供—種半導體裝置的f造方本 於+導體晶圓之其中—個面_ ^法,其包含 t著;之接著劑層的步驟;及將該接形給 具有規定形狀的接著劑層。 成从均一之厚度「 於上述半導體裳置的製造方法 喷墨印刷法、旋塗法或間隙塗佈刷法 較佳的是上述接著劑於饥〜層。 製造本發3収提供—財導齡置,討ΙίΠ述方心 [發明的效果] 射可提供以均—之膜厚而於半導體晶圓上 +f # 接著劑層的半導體晶圓 、使用該附接 者劑層的半導體晶圓的半導體裝置的製造方法及半導體裝 置。 【實施方式】 以下,參照圖式對本發明之附接著劑層的半導體晶 圓、半導體裝置的製造方法及半導體裝置的較佳之一實施 形態加以洋細說明。但本發明並不限定於以下之實施形態。 &lt;附接著劑層的半導體晶圓&gt; 本實施形態之附接著劑層的半導體晶圓包含半導體晶 圓、及形成於該半導體晶圓之其中一個面上的接著劑層, 6 201246280 接著劑層形成於半導體晶圓之周緣部之更内側。 圖1是表示附接著劑層的半導體晶圓之實施形態的模 式斷面圖。如圖1所示,於半導體晶圓6上形成有^均 -的接著劑層7。半導體晶圓6用以形翻置於半導&amp; 裝(圖6參照)内之半導體晶片13a及半導體晶片⑽(圖 6參照)。半導體晶圓6典型的是石夕晶圓。於半導體晶圓6 上,亦可已經措由如一步驟而形成有電路。 #接著劑層7較佳的是包含於】51〜饥下為液狀之接 著劑,可使用熱硬化性或感光性之接著劑而形成。 較佳的是本實施形態之熱硬化性接著劑含有(a)軌 硬化性樹脂(以下視情況稱為「⑷成分」)、(b)溶劑(.以 下視情況稱為「⑻成分」)、(c)熱塑性樹脂(以下視情 況稱為「(C)成分」)。 (A)熱硬化性樹脂若為包含可藉由加熱而產生交聯 反應的反應性化合物的成分則並無特別限定。(A)成分例 如可列舉·環氧樹脂、氰酸酯樹脂、馬來醯亞胺樹脂、烯 丙基耐地醯亞胺樹脂、酚樹脂、脲樹脂、三聚氰胺樹脂、 醇酸樹脂、丙烯酸樹脂、不飽和聚酯樹脂、鄰苯二曱酸二 烯丙酯樹脂、矽酮樹脂、間苯二酚甲醛樹脂、二曱苯樹脂、 夫,树月曰、聚胺基曱酸酯樹脂、g同樹脂、三聚氰酸三烯丙 酉曰树脂、聚異氰酸酯樹脂、含有異三聚氰酸三(2_羥基乙基) 醋的樹脂、含有偏苯三甲酸三稀丙醋之樹月旨、由環戊二婦 而合成之熱硬化性樹脂及由於芳香族二氰胺之三聚作用而 形成之熱硬化性樹脂。其中,於與聚醯亞胺樹脂之組合中, 7 201246280 4U873pif 可具有高溫下的優異之接著力的方面而言,(A)成分較佳 的是環氧樹脂、馬來醯亞胺樹脂及烯丙基耐地醯亞胺樹 脂。另外,該些熱硬化性樹脂可單獨使用或者組合使用2 種以上。 環氧樹脂較佳的是於分子内包含至少2個以上環氧基 的環氧樹脂,自熱壓接性或硬化性、硬化物特性之方面而 言,更佳的是酚的縮水甘油醚型環氧樹脂。此種樹脂例如 可列舉雙酚A型(或AD型、S型、F型)縮水甘油醚、 氣化雙酕A型縮水甘油驗、環氧乙烧加成物雙紛a型縮水 甘油醚、環氧丙烷加成物雙酚A型縮水甘油醚、酚系酚醛 清漆樹脂之縮水甘油醚、甲酚盼醛清漆樹脂之縮水甘油 醚、雙酚A酚醛清漆樹脂之縮水甘油醚、萘樹脂之縮水甘 油醚、3官能型(或4官能型)縮水甘油醚、二環戊二烯 苯盼树脂縮水甘油趟、二聚酸之縮水甘油酯、3官能型(或 4 g此型)之縮水甘油胺及萘樹脂之縮水甘油胺。該些環 氧樹脂可單獨使用或者組合使用2種以上。 而且作為%氧祕脂,自防止電遷移(eiectr〇migrati〇n ) 或防止金屬導體電路之腐蝕的觀點考慮,較佳的是使用將 作為雜質離子之鹼金屬離子 '鹼土金屬離子、函素離子、 特別是氣離子或水解性氣等降低至3〇〇 ppm以下的高純度 品。 環氧樹脂之量相對於接著劑總量而言較佳的是1〇質 S%〜80質量%,自接著劑之可靠性之觀點考慮,更佳的 是20質量%〜60質量%。若其量超過8〇質量%,則存在 8 201246280 40873pif 接著劑之黏度變高、印刷性降低之傾向。另一方面,若寶 氧樹脂之量不足1〇質量%,則存在變得難以獲得充分之熱 壓接性及高溫接著性的傾向。 … (A )熱硬化性樹脂之5%質量減少溫度較佳的是 1机以上’更佳的是18(rc以上,進—步更佳的是2〇(rc 以上。此處’所謂5%質量減少溫度是使用熱重/熱示差同 步分析儀(精工電子奈米科技有限公司 TW),於升溫速度為贼/min、氮氣之〇 下測定熱硬化性樹脂時的5%質量減少溫度 由適用5%質量減少溫度高的熱硬化性樹 9 壓接或熱硬化時揮發。具有此種耐錄:硬 具有芳香族的環氧樹脂,自接著性= 之觀點考A,可特佳地使用3官能型(或 」生 水甘油胺、雙酚A型(&lt; AD 此1 )之縮 , 〜Ί« '歧含環氧樹脂之情形時,較佳的是接著 呀糸化口物月e肪族胺、脂環族胺 J歹J舉 胺、脂肪族酸肝、月旨環族 2=夕♦、聚酿 胺、有機酸二醜牌、三氣化蝴胺錯以:氣基二酿 二醯胺衍生物、二羧酸二 4: /卡唑類、二氰基 苯基鱗、2-乙基_4-甲芙 7*^土膦、四笨基硼酸四 对3,5-二曱基_基)縣胺基 ' ==酸 Τ丞丙烯酸 _。 ^ (4AD型、S型、F型)之縮水甘 劑 9 201246280 40873pif _2_(0-[l_甲基亞丙基胺基]羧基胺基)乙酯、丨,8-二氮雜雙環 [5.4.0]十一碳烯_7_四苯基硼酸鹽及三級胺’。該些化 中,自溶解性、分散性之觀點考慮,可較佳地使用咪唑類。 自接紐、雜性、保存穩定性之觀點考慮,特佳 含有咪唑類作為硬化促進劑。硬化促進劑之量相對於 ^氧祕脂100質量份而言較佳的是〇〇1質量份〜刈質量 作為咪唑類,反應開始溫度較佳的是50。(:以上,更佳 ^崎以上,最佳的是·c以上。若反應開始溫度不 足fC,則保存穩定性降低,因此存在接著劑之黏度上升 而造成臈厚之控制變困難的傾向。 、而且,咪唑類可較佳地使用平均粒徑較佳的是1〇 μιη =更佳的疋8 μπι以下、最佳的是5 μπι以下的化合物。 猎由使用此種粒徑㈣德’可抑制接著劑之黏度變化, :抑制东唑類之沈降。而且,於形成薄膜時,可藉由減 低表面之凹凸轉得均一之膜。科,於硬化時可使接著 劑之硬化均-地進行,因此認為可減低逸氣。而且,藉由 =於環氧樹脂巾之溶解性差的料,可獲得良好之保存 穩定性。 —作為咪唑類,亦可使用溶解於環氧樹脂中之咪唑類。 糟由使用此種咪_ ’可進一步減低薄膜形成時之表面的 凹凸。,此種咪唑類並無特別限定,例如可列舉2_乙基_4_ 甲基来嗤、卜氰基乙基_2-甲基°米唾、1-氰基乙基-2-乙基冰 曱基米唑、1-氰基乙基-2-苯基咪唑、1-苄基-2-甲基咪唑及 201246280 4U8/Jpit 1-苄基-2-苯基咪唑。 而且’上述接著劑亦可包含酚系化合物作為硬化劑。 紛系化合物更佳的是於分子中具有至少2個以上酚性經基 的酚系化合物。此種化合物例如可列舉酚系齡醚清漆、甲 酚酚醛清漆、第三丁基苯酚酚醛清漆、二環戊二烯甲酚酚 醛清漆、二環戊二烯苯酚酚醛清漆、苯二甲基改性酚系酚 醛清漆、萘酚系化合物、三苯酚系化合物、四苯紛齡搭清 漆、雙酚A酚醛清漆、聚對乙烯基苯酚及苯酚芳烷基樹脂1 該些酚系化合物中較佳的是數量平均分子量為4〇〇〜4〇〇〇 之範圍内的紛系化合物。藉此可抑制於半導體裝置之組裝 中的加熱時,成為半導體元件或裝置等污染之原因的加熱 時的逸氣。酚系化合物之量相對於熱硬化性樹脂丨⑻質量 份而言較佳的是10質量份〜刚質量份,更佳的是1〇質 量份〜70質量份。 ^作為(B)成分之溶劑,較佳的是考慮防止後述之接 ,層,成步驟中之溶劑揮發而選擇彿點為 100°C以上之 =劑。藉由⑻溶劑’變得可調整接著劑之黏度。另外, /奋劑之沸點的上限值為300它左右。 甲轉如可列料甲基_2·轉·、二乙二醇二 甘醇二甲醚)、〜_甘醇二甲醚)、三乙二醇二曱醚(亦稱為三 γ-丁内酯 '異俄乙一醇二乙醚、2-(2-曱氧基乙氧基)乙醇、 -2-咪唑啶鲷、、乙爾/同、卡必醇、卡必醇乙酸酯、1,3-二曱基 乙基赛珞鏟7 △酸_2_(2_丁氧基乙氧基)乙酯、乙基赛珞蘇、 鲛醋、丁基賽珞蘇、二噁烷、環己酮、苯曱 11 201246280 40873pif ^、及作騎刷用墨水之溶劑而使用之以石油蒸鶴主 =的溶劑。該些溶劑可糊使们種或輕合使用2種以 (B) 溶劑較佳的是以接著劑之固形物成為2〇質量% 〜90質量°/〇的方式而進行調配,更佳的是25質量❶/。〜乃 質量%’進一步更佳的是30質量%〜60質量%。若上述固 形物為30質量%以上,則自抑制基於接著劑狀乾燥後的 體積減少的形狀變化之觀點考慮較佳,若為9〇質量%以 下,則自提高接著劑之流動性及作業性之觀點考慮較佳。 作為(C)成分之熱塑性樹脂的^較佳的是15(rCw 下,更佳的是12(TC以下,進一步更佳的是10(TC以下,特 佳的疋80C以下。於該Tg超過15〇。〇之情形時,存在接 著劑之黏度上升之傾向。而且’於熱壓接於被黏著體上時, 品要150 C以上之高溫,從而存在變得容易於半導體晶圓 上產生麵曲之傾向。另外,熱塑性樹脂之Tg的下限值為 -100°C左右。而且,自B-階段化後之黏性之觀點考慮,較 佳的是(C)成分於室溫(15°C〜35°C)下為固態。 此處’所謂「Tg」是表示將(C)成分製成膜時的主 分散峰值溫度。使用Rheometrics公司製造之黏彈性分析 儀「RSA-2」(商品名),於膜厚為1〇〇 μηι、升溫速度為 5°C/min、頻率為1 Hz、測定溫度為-150°C〜300°C之條件 下進行測定,將Tg付近的tan5峰值溫度作為主分散峰值 溫度。 (C) 成分之重量平均分子量較佳的是控制於5000〜 12 201246280 4U« /^pir 500000之範圍内,於可高度地兼顧熱壓接性與高溫接著性 之方面而言,更佳的是1〇000〜3〇〇〇〇0。此處,所謂「重 量平均分子量」是表示使用島津製作所公司製造之高效液 相層析儀「C-R4A」(商品名),以聚苯乙烯換算而進行測 定時的重量平均分子量。 (C)成分例如可列舉聚酯樹脂、聚醚樹脂、聚醯胺 樹脂、聚醯胺醯亞胺樹脂、聚醯亞胺樹脂、聚醚醯亞胺樹 脂、梦氧烧聚醯亞胺樹脂、聚酯醯亞胺樹脂、聚胺基曱酸 酯樹脂、聚胺基甲酸酯醯亞胺樹脂、聚胺基曱酸酯醯胺基 醯亞胺樹脂、該些樹脂之共聚物、該些樹脂之前驅物(聚 醯胺酸等)、聚苯并噁唑樹脂、苯氧樹脂、聚颯樹脂、聚醚 石風樹脂、聚苯硫醚樹脂、聚碳酸酯樹脂、聚醚酮樹脂、重 量平均分子量為1萬〜1〇〇萬之(曱基)丙烯酸系共聚物、酚 酿清漆樹脂及酚樹脂。該些樹脂可單獨使用丨種或者組合 使用2種以上。而且’(c)成分亦可為於該些樹脂之主鏈 及/或側鏈上賦予乙二醇、丙二醇等之二醇基、羧基及/或 羥基而成之樹脂。 於該些樹脂中,自高溫接著性、耐熱性之觀點考慮, (C)成分較佳的是具有醯亞胺基之樹脂。作為具有醯亞 胺基之樹脂,例如可列舉聚醯亞胺樹脂、聚醯胺醯亞胺樹 脂、聚醚醯亞胺樹脂、聚胺基曱酸酯醯亞胺樹脂、聚胺基 曱酸酯醢胺醯亞胺樹脂、矽氧烷聚醯亞胺樹脂、聚酯醯亞 胺樹脂及該些樹脂之共聚物。 聚酿亞胺樹脂可藉由公知之方法使四叛酸二酐與二胺 13 201246280 40873pif 進行縮合反應而獲得。亦即’於有機溶劑中,使四緩酸二 針與二胺等莫耳’或者視需要相對於四缓酸二酐之合計1 〇 mo卜使二胺之合計為較佳的是〇.5 m〇1〜2 0 、更佳的 是0·8 mol〜1.0 mol之範圍而調整組成比(各成分之添加 順序任意)’於反應溫度為80°C以下、較佳的是〇°c〜6〇。〇 下進行加成反應。隨著反應之進行,反應液之黏度緩緩上 升,生成聚醯亞胺樹脂之前驅物,亦即聚醯胺酸。另外, 為了抑制接著劑之諸特性的降低,上述四敌酸二酐較佳的 是於乙酸針中進行了再結晶純化處理者。 關於上述縮合反應中之四羧酸二酐與二胺之組成比, 右相對於四叛酸一針之合計1.0 mol而言,二胺之合計超 過2.0 mo卜則存在於所得之聚醯亞胺樹脂中,胺末端之聚 醯亞胺寡聚物之量變多的傾向,且存在聚醯亞胺樹脂之重 里平均分子里變低,接著劑之包含耐熱性的各種特性變得 不充分的傾向。另一方面,若相對於四羧酸二酐之合計1〇 mol而&amp;,二胺之合計不足〇 5 mol,則存在酸末端之聚醯 亞胺樹脂寡聚物的量變多之傾向,且存在聚醯亞胺樹脂之 重量平均分子量變低,接著劑之包含耐熱性的各種特性變 得不充分之傾向。 聚醯亞胺樹脂可藉由使上述反應物(聚醯胺酸)進行 脫水閉環而獲得。脫水閉環可藉由進行加熱處理之熱閉環 法、使用脫水劑之化學閉環法等而進行。 作為聚酿亞胺樹脂之原料而使用的四羧酸二酐並無特 別限制,例如可列舉均苯四曱酸二酐、3,3,,4,4,_聯苯四曱 201246280 4U8/ipit' 酸二酐、2,2,,3,3’-聯苯四曱酸二酐、2,2-雙(3,4-二羧基苯基) 丙烷二酐、2,2-雙(2,3-二羧基苯基)丙烷二酐、1,1-雙(2,3-二羧基苯基)乙烷二酐、1,1-雙(3,4-二羧基苯基)乙烷二酐、 雙(2,3-二羧基苯基)曱烷二酐、雙(3,4-二羧基苯基)曱烷二 酐、雙(3,4-二羧基苯基)砜二酐、3,4,9,10-二萘嵌苯四曱酸 二酐、雙(3,4-二羧基苯基)醚二酐、苯-1,2,3,4-四曱酸二酐、 3,4,3’,4'-二苯曱酮四曱酸二酐、2,3,2’,3,-二苯曱酮四曱酸二 酐、3,3,3’,4’-二苯曱酮四曱酸二酐、1,2,5,6-萘四曱酸二酐、 1,4,5,8-萘四曱酸二酐、2,3,6,7-萘四曱酸二酐、1,2,4,5-萘四 曱酸二酐、2,6-二氯萘-1,4,5,8-四曱酸二酐、2,7-二氯萘 -1,4,5,8-四曱酸二酐、2,3,6,7-四氣萘-1,4,5,8-四曱酸二酐、 菲-1,2,7,8-四曱酸二酐、菲-1,2,6,7-四曱酸二酐、菲-1,2,9,10-四曱酸二酐、。比。秦-2,3,5,6-四曱酸二酐、嗟吩-2,3,4,5-四曱 酸二酐、2,3,3',4’-聯苯四曱酸二酐、3,3’,4,4’-聯苯四曱酸二 酐、2,2',3:,3’-聯苯四曱酸二酐、雙(3,4-二羧基苯基)二曱基 矽烷二酐、雙(3,4-二羧基苯基)曱基苯基矽烷二酐、雙(3,4-二羧基苯基)二苯基矽烷二酐、1,4-雙(3,4-二羧基苯基二曱 基矽烷基)苯二酐、1,3-雙(3,4-二羧基苯基)-1,1,3,3-四曱基 二環己烷二酐、對伸苯基雙(偏笨三曱酸酐酯)、乙烷四曱 酸二酐、1,2,3,4-丁烷四曱酸二酐、十氫化萘-1,4,5,8-四曱 酸二酐、4,8-二曱基-1,2,3,5,6,7-六氫萘-1,2,5,6-四曱酸二 酐、環戊烷-1,2,3,4-四甲酸二酐、吡咯啶-2,3,4,5-四曱酸二 酐、1,2,3,4-環丁烷四曱酸二酐、雙(夕卜雙環[2.2.1]庚烷-2,3-二曱酸二酐、雙環-[2.2.2]-辛-7-烯-2,3,5,6-四曱酸二酐、2,2- 15 201246280 40873pif 雙[4-(3,4-二羧基苯氧基)苯基]丙烷二酐、2,2-雙(3,4-二羧基 苯基)六氟丙烷二酐、2,2-雙[4-(3,4-二羧基苯氧基)苯基]六 氟丙烷二酐、4,4’-雙(3,4-二羧基苯氧基)二苯硫醚二酐、1,4-雙(2-羥基六氟異丙基)苯雙(偏苯三酸)酐、1,3-雙(2-羥基六 氟異丙基)苯雙(偏苯三酸)酐、5-(2,5-二氧四氫呋喃基)-3-曱基-3-環己烯-1,2-二曱酸二酐、四氫呋喃-2,3,4,5-四曱酸 二酐及下述通式(7)所表示之四羧酸二酐。下述式(7) 中,a表示2〜20之整數。 [化1]201246280 4U873pif VI. [Technical Field] The present invention relates to a semiconductor wafer with an adhesive layer, a method of manufacturing a semiconductor device, and a semiconductor device. More specifically, the present invention relates to a wafer bonding used as a bonding material (wafer bonding material) when a semiconductor element such as a 1C or an LSI is laminated with a lead member such as a lead frame or an insulating supporting substrate or a semiconductor wafer. A semiconductor wafer with an adhesive layer, a method of manufacturing a semiconductor device using the semiconductor wafer with the adhesive layer, and a semiconductor device. [Prior Art] It is known that the bonding material of the body element and the supporting member or the bonding material when the semiconductor wafer is laminated with each other is known as a film of the stiletto imine resin. Or an adhesive film for bonding an inorganic filler. The semiconductor device is mounted on the semiconductor wafer, and the assembly step of the 1 bobble conductor device as described above is performed to make it more efficient: as the semiconductor wafer is borrowed, and the following application is used, the application is followed. ^Chemical bonding is followed by a step. The W is coated by spin coating. The ink is applied to the entire surface of the semiconductor wafer. The film is coated on the substrate or the semiconductor wafer by the dicing step. Bull-conductor cymbals attached to semiconductors The entire surface of semiconductor wafers is widely known. 4 201246280 Spin coating method, that is, coating a liquid adhesive by rotating at high speed on a semiconductor wafer. [PRIOR ART DOCUMENT] [Patent Document] [Patent Document 1] Japanese Patent Laid-Open No. 2_-98213, Gong Hao [Patent Document 2] Japanese Patent Special Fair 5-54, No. In the lamination, it is easy to waste the adhesive film of the portion other than the wafer. And H is sprayed onto the semiconductor wafer by spin coating; in the case where the liquid adhesive extends to the end of the semiconductor wafer, the adhesive layer is easily applied to the end layer. The uniformity is easy to roll the air bubbles when laminating the dicing film. In the cutting step, the wafer flute problem is caused. Further, 匕 = thickness unevenness of the undercoat layer - in the difficult lamination step: the load applied to the bulk wafer becomes uneven, and thus the damage of the special-shaped conductor wafer may occur. SUMMARY OF THE INVENTION The present invention has been made in view of the above-described facts, and an object thereof is to provide a semiconductor film having a film thickness formed on a semiconductor wafer, and a semiconductor wafer using the same (four) The manufacturing method of the two sets and the semiconductor device. 4 The present invention provides a semiconductor wafer with an adhesive layer, a package of human conductor wafers; and a layer of I formed on the semiconductor wafer, the adhesive layer being formed on the periphery of the semiconductor wafer The inside of the department. 201246280 40873pif Ding - "The adhesive for the adhesive." The main semiconductor device also provides a semiconductor device in which a surface of the +conductor wafer is formed by a method of forming an adhesive layer; and the bonding is given a prescribed shape. The layer of the adhesive. The thickness of the film is uniform. The inkjet printing method, the spin coating method or the gap coating brush method is preferably the above-mentioned adhesive agent in the hunger layer. The effect of the invention is to provide a semiconductor wafer having a uniform film thickness on the semiconductor wafer +f # a subsequent layer, and a semiconductor wafer using the same A method of manufacturing a semiconductor device and a semiconductor device. [Embodiment] Hereinafter, a preferred embodiment of a semiconductor wafer, a method of manufacturing a semiconductor device, and a semiconductor device according to the present invention will be described in detail with reference to the drawings. The present invention is not limited to the following embodiments. <Semiconductor wafer with adhesive layer> The semiconductor wafer with the adhesive layer of the present embodiment includes a semiconductor wafer and one of the semiconductor wafers. The adhesive layer on the surface, 6 201246280 The adhesive layer is formed on the inner side of the peripheral portion of the semiconductor wafer. Fig. 1 is a view showing an embodiment of a semiconductor wafer with an adhesive layer. A cross-sectional view is shown in Fig. 1. An adhesive layer 7 is formed on the semiconductor wafer 6. The semiconductor wafer 6 is used to form a semiconductor wafer 6 in a semiconductor package (refer to Figure 6). The semiconductor wafer 13a and the semiconductor wafer (10) (refer to Fig. 6). The semiconductor wafer 6 is typically a stone wafer. On the semiconductor wafer 6, a circuit may also be formed as a step. It is preferable to use it as a liquid-like adhesive agent, and it can be formed using a thermosetting or photosensitive adhesive. It is preferable that the thermosetting adhesive of this embodiment contains (a) rail hardening. Resin (hereinafter referred to as "(4) component"), (b) solvent (hereinafter referred to as "(8) component"), (c) thermoplastic resin (hereinafter referred to as "(C) component"). (A) The thermosetting resin is not particularly limited as long as it is a component containing a reactive compound which can cause a crosslinking reaction by heating. Examples of the component (A) include an epoxy resin, a cyanate resin, a maleimide resin, an allyl quinone imine resin, a phenol resin, a urea resin, a melamine resin, an alkyd resin, and an acrylic resin. Unsaturated polyester resin, diallyl phthalate resin, fluorenone resin, resorcinol formaldehyde resin, diterpene benzene resin, husband, sapphire, polyamine phthalate resin, g resin , a cyanuric acid cyanurate resin, a polyisocyanate resin, a resin containing tris(2-hydroxyethyl) vinegar, a triacetate containing trimellitic acid, and a ring A thermosetting resin synthesized by a woman, and a thermosetting resin formed by the trimerization of aromatic dicyandiamide. Among them, in the combination with the polyimide resin, 7 201246280 4U873pif can have excellent adhesion at high temperatures, and the component (A) is preferably an epoxy resin, a maleimide resin, and an alkene. Propyl quinone imine resin. Further, these thermosetting resins may be used singly or in combination of two or more. The epoxy resin is preferably an epoxy resin containing at least two epoxy groups in the molecule, and more preferably a glycidyl ether type of phenol from the viewpoints of thermocompression bonding property, hardenability, and cured property. Epoxy resin. Examples of such a resin include bisphenol A type (or AD type, S type, and F type) glycidyl ether, vaporized biguanide type A glycidol test, and epoxy ethylene burn adduct double a-type glycidyl ether. Propylene oxide adduct bisphenol A type glycidyl ether, glycidyl ether of phenolic novolac resin, glycidyl ether of cresol acetal resin, glycidyl ether of bisphenol A novolac resin, shrinkage of naphthalene resin Glycerol ether, trifunctional (or tetrafunctional) glycidyl ether, dicyclopentadiene benzene resin glycidol, glycidyl dimer acid, trifunctional (or 4 g type) glycidylamine And glycidylamine of naphthalene resin. These epoxy resins may be used singly or in combination of two or more. Further, as the % oxygen secreting grease, from the viewpoint of preventing electromigration (eiectr〇 migrati〇n) or preventing corrosion of the metal conductor circuit, it is preferred to use an alkali metal ion as an impurity ion, an alkaline earth metal ion, and a functional ion. In particular, a high-purity product having a gas ion or a hydrolyzable gas reduced to 3 〇〇 ppm or less. The amount of the epoxy resin is preferably from 1% to 80% by mass based on the total amount of the adhesive, and more preferably from 20% by mass to 60% by mass from the viewpoint of reliability of the adhesive. If the amount exceeds 8% by mass, there is a tendency that the viscosity of the adhesive of 8 201246280 40873pif is high and the printability is lowered. On the other hand, when the amount of the epoxy resin is less than 1% by mass, it tends to be difficult to obtain sufficient thermal pressure bondability and high temperature adhesion. (A) 5% mass reduction temperature of thermosetting resin is preferably 1 or more. More preferably, it is 18 (rc or more, and more preferably 2 〇 (rc or more. Here, 'so-called 5% The mass reduction temperature is 5% mass reduction temperature when the thermosetting resin is measured at a heating rate of thief/min and nitrogen gas using a thermogravimetric/thermal differential synchronization analyzer (Seiko Electronics Nano Co., Ltd. TW). 5% by mass of thermosetting tree with high temperature reduction 9 volatilization during crimping or thermosetting. This type of resistance: hard epoxy resin, from the viewpoint of adhesion = A, can be used particularly well 3 Functional type (or "glycidamine, bisphenol A type (&lt; AD this 1) shrink, ~Ί« 'in the case of epoxy resin, it is better to follow the mouth Amine, alicyclic amine J歹J amine, aliphatic acid liver, month of the ring family 2 = eve ♦, poly-branched amine, organic acid two ugly brand, three gasification of the amine error: gas based two brewed two Indoleamine derivatives, dicarboxylic acid di 4: /carbazoles, dicyanophenyl scales, 2-ethyl-4-4-fusin 7*^ phosphine, tetrasuccinic boric acid, tetras, 3,5-diindole Base_ki) County Amine ' == acid Τ丞 acrylic acid _. ^ (4AD type, S type, F type) shrinkage agent 9 201246280 40873pif _2_(0-[l_methylpropyleneamino]carboxyamino)ethyl ester , hydrazine, 8-diazabicyclo[5.4.0]undecene-7-tetraphenylborate and tertiary amine'. Among these, from the viewpoint of solubility and dispersibility, it is preferred. It is preferable to contain an imidazole as a hardening accelerator from the viewpoint of the bonding, the heterogeneity, and the storage stability. The amount of the hardening accelerator is preferably 相对 with respect to 100 parts by mass of the oxy-lipid. 〇 1 part by mass to 刈 mass is used as the imidazole, and the reaction initiation temperature is preferably 50. (: Above, more preferably more than saki, and most preferably · c or more. If the reaction starting temperature is less than fC, the storage stability is lowered. Therefore, there is a tendency that the viscosity of the adhesive increases and the control of the thickness becomes difficult. Further, the imidazoles preferably use an average particle diameter of preferably 1 〇 μηη = more preferably 疋 8 μπι or less, and most preferably The compound is below 5 μπι. Hunting uses this particle size (four) de' to inhibit the viscosity change of the adhesive, The precipitation of the azoles, and the formation of the film can be achieved by reducing the unevenness of the surface to obtain a uniform film. In the curing, the hardening of the adhesive can be carried out uniformly, and therefore it is considered that the outgassing can be reduced. Good storage stability can be obtained by using a material having poor solubility in an epoxy resin towel. - As an imidazole, an imidazole dissolved in an epoxy resin can also be used. Further, the unevenness of the surface at the time of film formation is further reduced. The imidazoles are not particularly limited, and examples thereof include 2_ethyl_4_methyl hydrazine, cyanoethyl 2-methylpyranium, and 1- Cyanoethyl-2-ethyl halocidyl carbazole, 1-cyanoethyl-2-phenylimidazole, 1-benzyl-2-methylimidazole and 201246280 4U8/Jpit 1-benzyl-2- Phenyl imidazole. Further, the above-mentioned adhesive may also contain a phenolic compound as a curing agent. More preferably, the compound is a phenolic compound having at least two or more phenolic groups in the molecule. Examples of such a compound include a phenolic age ether varnish, a cresol novolac, a third butyl phenol novolak, a dicyclopentadiene cresol novolac, a dicyclopentadiene phenol novolac, and a benzene dimethyl modification. Phenolic novolak, naphthol compound, trisphenol compound, tetraphenyl aging varnish, bisphenol A novolac, poly(p-vinylphenol) and phenol aralkyl resin 1 are preferred among the phenolic compounds. The number average molecular weight is a variegated compound in the range of 4 〇〇 to 4 〇〇〇. Thereby, it is possible to suppress outgassing during heating which is caused by contamination of a semiconductor element or a device during heating during assembly of the semiconductor device. The amount of the phenolic compound is preferably 10 parts by mass to just parts by mass, more preferably 1 part by mass to 70 parts by mass, per part by mass of the thermosetting resin bismuth (8). As the solvent of the component (B), it is preferred to prevent the solvent in the step, the layer and the solvent in the step of volatilization, and to select a agent having a point of 100 ° C or higher. The viscosity of the adhesive can be adjusted by (8) solvent'. In addition, the upper limit of the boiling point of /the agent is about 300. A can be converted to methyl 2·trans, diethylene glycol diglyme, _glyme, and triethylene glycol dioxime (also known as tri-gamma-butyl) Lactone 'iso-isoethyl alcohol diethyl ether, 2-(2-decyloxyethoxy)ethanol, 2-imidazolium pyridinium, Ehr/iso, carbitol, carbitol acetate, 1, 3-dimercaptoethyl cymbal shovel 7 △ acid_2_(2_butoxyethoxy)ethyl ester, ethyl sialophane, vinegar, butyl cyanidin, dioxane, cyclohexanone , benzoquinone 11 201246280 40873pif ^, and used as a solvent for the ink used for brushing, the solvent used for petroleum steaming cranes. These solvents can be used to paste or lightly use two kinds of (B) solvent. It is formulated such that the solid content of the adhesive is from 2% by mass to 90% by mass, more preferably 25 mass%/% by mass%, and still more preferably 30% by mass to 60% by mass. When the solid content is 30% by mass or more, it is preferable from the viewpoint of suppressing the shape change of the volume reduction after the adhesive drying, and if it is 9% by mass or less, the fluidity and workability of the adhesive are improved. View of sex The thermoplastic resin as the component (C) is preferably 15 (rCw, more preferably 12 (TC or less, still more preferably 10 (TC or less, particularly preferably 疋80C or less). When the Tg exceeds 15 〇, in the case of 〇, there is a tendency for the viscosity of the adhesive to rise. Moreover, when the thermocompression is bonded to the adherend, the product has a high temperature of 150 C or more, so that it becomes easy to be crystallized. The lower limit of the Tg of the thermoplastic resin is about -100 ° C. Further, from the viewpoint of the viscosity after the B-stage, it is preferred that the component (C) is in the room. The temperature is 15°C to 35°C. The term “Tg” is the main dispersion peak temperature when the component (C) is formed into a film. The viscoelastic analyzer “RSA- manufactured by Rheometrics” is used. 2" (trade name), measured at a film thickness of 1 〇〇μηι, a heating rate of 5 ° C / min, a frequency of 1 Hz, and a measurement temperature of -150 ° C to 300 ° C, and the Tg is close The peak temperature of tan5 is taken as the main dispersion peak temperature. (C) The weight average molecular weight of the component is preferably controlled at 5000 to 1 2 201246280 4U« /^pir 500000, in terms of the high degree of thermocompression bonding and high-temperature adhesion, it is more preferably 1〇000~3〇〇〇〇0. Here, the so-called " The weight average molecular weight is a weight average molecular weight measured by a high performance liquid chromatography "C-R4A" (trade name) manufactured by Shimadzu Corporation, and measured in terms of polystyrene. Ester resin, polyether resin, polyamide resin, polyamidamine resin, polyimine resin, polyether phthalimide resin, oxymethylene phthalimide resin, polyester phthalimide resin, poly Amino phthalate resin, polyurethane quinone imide resin, polyamino phthalate amide quinone imine resin, copolymer of these resins, precursors of these resins (polyproline) Etc.), polybenzoxazole resin, phenoxy resin, polyfluorene resin, polyether stone resin, polyphenylene sulfide resin, polycarbonate resin, polyether ketone resin, weight average molecular weight of 10,000~1〇〇 Wanzhi (acrylic) acrylic copolymer, phenolic varnish resin and phenolic resin. These resins may be used alone or in combination of two or more. Further, the component (c) may be a resin obtained by imparting a diol group such as ethylene glycol or propylene glycol, a carboxyl group and/or a hydroxyl group to the main chain and/or the side chain of the resins. Among these resins, the component (C) is preferably a resin having a quinone imine group from the viewpoint of high-temperature adhesion and heat resistance. Examples of the resin having a quinone imine group include a polyimide resin, a polyamide amide resin, a polyether quinone resin, a polyamino phthalate quinone imide resin, and a polyamino phthalate. Amidoxime resin, a decylene polyimine resin, a polyester phthalimide resin, and a copolymer of these resins. The polyamidene resin can be obtained by a condensation reaction of tetrahydro acid dianhydride with diamine 13 201246280 40873pif by a known method. That is, in the organic solvent, it is preferred that the total amount of the diamine is 〇.5, and the total amount of the diamine is preferably 1 〇mo, or the total amount of the diamines. m 〇 1 〜 2 0 , more preferably in the range of 0·8 mol to 1.0 mol, and the composition ratio is adjusted (the order of addition of the components is arbitrary) 'the reaction temperature is 80 ° C or less, preferably 〇 ° c 〜 6〇. Addition reaction is carried out under 〇. As the reaction proceeds, the viscosity of the reaction solution gradually rises to form a precursor of the polyimine resin, i.e., polylysine. Further, in order to suppress the deterioration of the properties of the adhesive, the above-mentioned tetracarboxylic acid dianhydride is preferably subjected to recrystallization purification treatment in an acetic acid needle. Regarding the composition ratio of the tetracarboxylic dianhydride to the diamine in the above condensation reaction, the total amount of the diamine is more than 2.0 mol, and the total amount of the diamine is more than 2.0 mol, which is present in the obtained polyimine. In the resin, the amount of the polyamidimide oligomer at the amine end tends to increase, and the weight average molecular weight of the polyimide resin tends to be low, and various properties including heat resistance of the adhesive tend to be insufficient. On the other hand, when the total amount of the diamine is less than mol5 mol based on the total of the tetracarboxylic dianhydride and the total amount of the dicarboxylic acid dianhydride is less than 5 mol, the amount of the polyimine resin oligomer having an acid end tends to increase, and The weight average molecular weight of the polyimide resin is low, and various properties including heat resistance of the adhesive tend to be insufficient. The polyimine resin can be obtained by subjecting the above reactant (polyglycolic acid) to dehydration ring closure. The dehydration ring closure can be carried out by a thermal ring closure method which performs heat treatment, a chemical ring closure method using a dehydrating agent, or the like. The tetracarboxylic dianhydride used as a raw material of the polyamidene resin is not particularly limited, and examples thereof include pyromellitic dianhydride, 3,3,4,4,_biphenyltetradecene 201246280 4U8/ipit 'acid dianhydride, 2,2,,3,3'-biphenyltetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 2,2-bis (2, 3-Dicarboxyphenyl)propane dianhydride, 1,1-bis(2,3-dicarboxyphenyl)ethane dianhydride, 1,1-bis(3,4-dicarboxyphenyl)ethane dianhydride , bis(2,3-dicarboxyphenyl)decane dianhydride, bis(3,4-dicarboxyphenyl)decane dianhydride, bis(3,4-dicarboxyphenyl)sulfone dianhydride, 3, 4,9,10-perylene tetraphthalic acid dianhydride, bis(3,4-dicarboxyphenyl)ether dianhydride, benzene-1,2,3,4-tetradecanoic acid dianhydride, 3,4 , 3',4'-dibenzophenone tetradecanoic acid dianhydride, 2,3,2',3,-dibenzophenone tetradecanoic acid dianhydride, 3,3,3',4'-diphenylhydrazine Ketotetracarboxylic acid dianhydride, 1,2,5,6-naphthalene tetraphthalic acid dianhydride, 1,4,5,8-naphthalene tetraphthalic acid dianhydride, 2,3,6,7-naphthalene tetradecanoic acid Anhydride, 1,2,4,5-naphthalene tetraphthalic acid dianhydride, 2,6-dichloronaphthalene-1,4,5,8-tetradecanoic acid dianhydride, 2,7-dichloronaphthalene-1,4 ,5,8-tetradecanoic dianhydride, 2,3,6,7-tetra-naphthalene-1,4,5,8-tetradecanoic acid Anhydride, phenanthrene-1,2,7,8-tetradecanoic acid dianhydride, phenanthrene-1,2,6,7-tetradecanoic acid dianhydride, phenanthrene-1,2,9,10-tetradecanoic acid dianhydride, . ratio. Qin-2,3,5,6-tetradecanoic dianhydride, porphin-2,3,4,5-tetradecanoic dianhydride, 2,3,3',4'-biphenyltetracarboxylic dianhydride , 3,3',4,4'-biphenyltetracarboxylic dianhydride, 2,2',3:,3'-biphenyltetracarboxylic dianhydride, bis(3,4-dicarboxyphenyl) Mercapto phthalic anhydride, bis(3,4-dicarboxyphenyl)nonylphenyl phthalane dianhydride, bis(3,4-dicarboxyphenyl)diphenyl phthalane dianhydride, 1,4-double (3 , 4-dicarboxyphenyl decyl decyl benzene phthalic anhydride, 1,3-bis(3,4-dicarboxyphenyl)-1,1,3,3-tetradecyldicyclohexane dianhydride , p-phenylene bis (powdered triacetic acid anhydride), ethane tetraphthalic acid dianhydride, 1,2,3,4-butane tetraphthalic acid dianhydride, decalin-1,4,5,8 - tetradecanoic acid dianhydride, 4,8-dimercapto-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6-tetradecanoic acid dianhydride, cyclopentane-1 , 2,3,4-tetracarboxylic dianhydride, pyrrolidine-2,3,4,5-tetradecanoic acid dianhydride, 1,2,3,4-cyclobutane tetradecanoic acid dianhydride, double Bicyclo[2.2.1]heptane-2,3-diphthalic acid dianhydride, bicyclo-[2.2.2]-oct-7-ene-2,3,5,6-tetradecanoic acid dianhydride, 2,2 - 15 201246280 40873pif bis[4-(3,4-dicarboxyphenoxy)phenyl]propane dianhydride, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane II 2,2-bis[4-(3,4-dicarboxyphenoxy)phenyl]hexafluoropropane dianhydride, 4,4'-bis(3,4-dicarboxyphenoxy)diphenyl sulfide Dihydride, 1,4-bis(2-hydroxyhexafluoroisopropyl)benzenebis(trimellitic acid) anhydride, 1,3-bis(2-hydroxyhexafluoroisopropyl)benzenedi(trimellitic acid) Anhydride, 5-(2,5-dioxotetrahydrofuryl)-3-indolyl-3-cyclohexene-1,2-dicarboxylic acid dianhydride, tetrahydrofuran-2,3,4,5-tetradecanoic acid The dianhydride and the tetracarboxylic dianhydride represented by the following formula (7): In the following formula (7), a represents an integer of 2 to 20.

⑺ 上述通式(7)所表示之四羧酸二酐例如可由偏苯三曱 酸酐單醯氣及所對應之二醇而合成,具體而言可列舉 1,2-(伸乙基)雙(偏苯三曱酸酐酯)、1,3-(三亞曱基)雙(偏苯 三甲酸酐酯)、1,4-(四亞甲基)雙(偏苯三甲酸酐酯)、1,5-(五 亞曱基)雙(偏苯三曱酸酐酯)、1,6-(六亞曱基)雙(偏苯三甲 酸酐酯)、1,7-(七亞曱基)雙(偏苯三曱酸酐酯)、1,8-(八亞曱 基)雙(偏苯三曱酸酐酯)、1,9-(九亞曱基)雙(偏苯三曱酸酐 酯)、1,10-(十亞曱基)雙(偏苯三曱酸酐酯)、1,12-(十二亞曱 基)雙(偏苯三甲酸酐酯)、1,16-(十六亞甲基)雙(偏苯三曱酸 酐酯)及1,18-(十八亞曱基)雙(偏苯三曱酸酐酯)。 201246280 ^tLfO / ^pil 而&quot;為四緩峻二針,自賦予在溶劑中之良好的溶 解性及=^相對於365 nm光之透明性的觀點考慮’ 較佳的禾私(8)或式⑼所麵之四舰二針。 [化2](7) The tetracarboxylic dianhydride represented by the above formula (7) can be synthesized, for example, from trimellitic anhydride monoterpene gas and the corresponding diol, and specifically, 1,2-(extended ethyl) bis ( Trimellitic anhydride ester), 1,3-(triphenylene)bis(trimellitic anhydride), 1,4-(tetramethylene)bis(trimellitic anhydride), 1,5-( Wu's fluorenyl) bis(trimellitic anhydride), 1,6-(hexamethylene) bis(trimellitic anhydride), 1,7-(sevenindolyl) bis(p-benzotrifluoride) Anhydride ester), 1,8-(octadecyl)bis(trimellitic anhydride), 1,9-(nonamidino)bis(trimellitic anhydride), 1,10-(ten Yttrium) bis(trimellitic anhydride), 1,12-(tw-indenyl)bis(trimellitic anhydride), 1,16-(hexamethylene)bis (p-benzoic acid) A phthalic anhydride ester) and 1,18-(octadecyl) bis(trimellitic anhydride ester). 201246280 ^tLfO / ^pil and "for the four slow two needles, from the viewpoint of giving good solubility in the solvent and =^ relative to the transparency of 365 nm light, 'better of the private (8) or The four ships and two needles of the formula (9). [Chemical 2]

如上所述的四羧酸二酐可單獨使用丨種或組合使用2 禮以上· 於進一步使接著強度上升之方面而言,(C)成分可使 用含有羧基及/或酚性羥基之聚醯亞胺樹脂。較佳的是作為 上述含有羧基及/或酚性羥基之聚醯亞胺樹脂的原料而使 用的二胺包含下述式(10)、式(U)、式(12)或式(13) 戶斤表示之芳香族二胺。 [4匕 3] 17 201246280 40873pifThe tetracarboxylic dianhydride as described above may be used alone or in combination of two or more. In order to further increase the strength of the bonding, the component (C) may be a polyazide having a carboxyl group and/or a phenolic hydroxyl group. Amine resin. Preferably, the diamine used as a raw material of the above-mentioned polyimine resin containing a carboxyl group and/or a phenolic hydroxyl group includes the following formula (10), formula (U), formula (12) or formula (13) An aromatic diamine represented by jin. [4匕 3] 17 201246280 40873pif

作為上述聚醯亞胺樹脂之原料而使用的其他二胺並無 特別限制,例如可列舉鄰苯二胺、間苯二胺、對苯二胺、 3’3 -一fee基二苯鍵、3,4’-二胺基二苯輕、4,4’-二胺基二苯 醚、3,3,-二胺基二苯曱烷、3,4,-二胺基二苯甲烷、4,4,_二胺 基二苯基曱烷、雙(4-胺基-3,5-二曱基苯基)曱烷、雙(4-胺 基-3,5-二異丙基苯基)曱烷、3,3’_二胺基二苯基二氟曱烷、 3,4’-二胺基二苯基二氟曱烷、4,4’_二胺基二苯基二氟甲 燒、3,3’-二胺基二苯基砜、3,4,-二胺基二苯基砜、4,4,-二胺 基一苯基碱、3,3’-二胺基二苯硫謎、3,4’-二胺基二苯硫驗、 4,4’-二胺基二苯硫醚、3,3'-二胺基二苯基酮、3,4’-二胺基二 笨基酮、4,4'-二胺基二苯基酮、2,2-雙(3-胺基苯基)丙烷、 2,2’-(3,4'-二胺基二苯基)丙烷、2,2-雙(4-胺基苯基)丙烷、 2,2-雙(3-胺基苯基)六氟丙烷、2,2-(3,心二胺基二苯基)六氟 201246280 ^υδ /όριί 丙烧、2,2-雙(4-胺基苯基)六良丙燒、以雙…胺基苯氧基 苯、1,4-雙(3-胺基苯氧基)笨、以雙…胺基笨氧基)苯、 3,3’-(1,4-伸苯基雙(1_曱基亞乙基))雙苯胺、3 4,_(14伸苯基 雙(1-曱基亞乙基))雙苯胺、4,4,-(ι,4-伸苯基雙(ι_曱基亞乙 基))雙苯胺、2,2-雙(4-(3-胺基笨氧基)苯基)丙烷、2,2_雙 (4-(3-胺基本氧基)苯基)六氟丙燒、2,2_雙(4_(4_胺基苯氧基) 苯基)六氟丙烷、雙(4-(3-胺基笨氧基)苯基)硫醚、雙(4_(4_ 胺基苯氧基)苯基)硫醚、雙(4-(3_胺基苯氧基)苯基)砜、雙 (4_(4_胺基苯氧基)苯基)砜、3,3,_二羥基_4,4,_二胺基聯苯、 及3,5-二胺基苯曱酸等芳香族二胺,13-雙(胺基甲基)環己 烷、2,2-雙(4-胺基苯氧基)丙烷、下述通式(14)所表示之 脂肪族醚二胺、以及下述通式(15)所表示之矽氧烷二胺。 於上述二胺中,自賦予與其他成分之相溶性的方面而 言,較佳的是下述通式(14)所表示之脂肪族醚二胺,更 佳的是乙二醇及/或丙二醇系二胺。於下述通式(14)中, R1、R2及R3分別獨立地表示碳數為1〜10之伸烷基,b表 示2〜80之整數。 [化4] H2N Rl—^*0——〇—妒—NH2 C1 4) 此種脂肪族醚二胺具體而言可列舉:Sun Techno Chemical Co.,Ltd.製造之 JEFFAMINE D-230、D-400、 D-2000、D-4000、ED-600、ED-900、ED-2000、EDR-148, 19 201246280 40873pif BASF公司製造之聚謎胺D-230、D-400、D-2000等聚氧伸 烷基二胺等脂肪族二胺。該些二胺較佳的是所有二胺的扣 莫耳%以上’於與(A)熱硬化性樹脂等其他調配成分之 相溶性、以及可高度地兼顧熱壓接性與高溫接著性之方面 而言,更佳的是50莫耳%以上。 而且,作為上述二胺,於賦予室溫下之密接性、接著 性之方面而言,較佳的是下述通式(15)所表示之矽氧妒 二胺。於下述通式(15)中,R4及R9分別獨立地表示^ 數為1〜5之伸烷基或亦可具有取代基之伸苯基,r5、r6^ R7及R8分觸立地表示碳數為丨〜5之絲、苯基或 基’ d表示1〜5之整數。 [化5]The other diamine used as a raw material of the above polyimine resin is not particularly limited, and examples thereof include o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3'3-fee-based diphenyl bond, and 3 , 4'-diaminodiphenyl light, 4,4'-diaminodiphenyl ether, 3,3,-diaminodiphenyl decane, 3,4,-diaminodiphenylmethane, 4, 4,-Diaminodiphenylnonane, bis(4-amino-3,5-diamidinophenyl)decane, bis(4-amino-3,5-diisopropylphenyl) Decane, 3,3'-diaminodiphenyldifluorodecane, 3,4'-diaminodiphenyldifluorodecane, 4,4'-diaminodiphenyldifluoromethane , 3,3'-diaminodiphenyl sulfone, 3,4,-diaminodiphenyl sulfone, 4,4,-diaminomonophenyl base, 3,3'-diaminodiphenyl Sulfur mystery, 3,4'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl ketone, 3,4'-diamine Diphenyl ketone, 4,4'-diaminodiphenyl ketone, 2,2-bis(3-aminophenyl)propane, 2,2'-(3,4'-diaminodiphenyl ) propane, 2,2-bis(4-aminophenyl)propane, 2,2-bis(3-aminophenyl)hexafluoropropane, 2,2-(3,diaminediphenyl) Hexafluoro 201246280 ^υδ /όριί Propylene, 2,2-bis(4-aminophenyl)hexafluoropropene, bis-aminophenoxybenzene, 1,4-bis(3-aminophenoxyl) Base) stupid, double (amino) phenoxy) benzene, 3,3'-(1,4-phenylene bis(1-fluorenylethylene)) bisaniline, 3 4, _ (14 benzene) Bis(1-mercaptoethylidene))diphenylamine, 4,4,-(ι,4-phenylphenylbis(ι-decylethylene)diphenylamine, 2,2-bis(4- (3-aminophenyloxy)phenyl)propane, 2,2-bis(4-(3-amine basic oxy)phenyl)hexafluoropropane, 2,2-bis (4-(4-amino) Phenoxy)phenyl)hexafluoropropane, bis(4-(3-aminophenyloxy)phenyl) sulfide, bis(4-(4-aminophenoxy)phenyl) sulfide, double (4) -(3_Aminophenoxy)phenyl)sulfone, bis(4-(4-aminophenoxy)phenyl)sulfone, 3,3,-dihydroxy-4,4,-diaminobiphenyl And an aromatic diamine such as 3,5-diaminobenzoic acid, 13-bis(aminomethyl)cyclohexane, 2,2-bis(4-aminophenoxy)propane, and the following The aliphatic ether diamine represented by the formula (14) and the alkoxyalkyl diamine represented by the following formula (15). In the above diamine, from the viewpoint of imparting compatibility with other components, an aliphatic ether diamine represented by the following formula (14), more preferably ethylene glycol and/or propylene glycol, is preferred. Is a diamine. In the following formula (14), R1, R2 and R3 each independently represent an alkylene group having a carbon number of 1 to 10, and b represents an integer of 2 to 80. H2N Rl—^*0—〇—妒—NH 2 C 1 4) Specific examples of such an aliphatic ether diamine include JEFFAMINE D-230, D- manufactured by Sun Techno Chemical Co., Ltd. 400, D-2000, D-4000, ED-600, ED-900, ED-2000, EDR-148, 19 201246280 40873pif Polyurethane D-230, D-400, D-2000, etc. manufactured by BASF An aliphatic diamine such as an alkyl diamine. These diamines are preferably compatible with other compounding components such as (A) a thermosetting resin, and a high degree of compatibility between thermocompression bonding and high temperature bonding. More preferably, it is more than 50% by mole. Further, the diamine is preferably an anthraquinone diamine represented by the following formula (15) in terms of adhesion to the room temperature and adhesion. In the following formula (15), R4 and R9 each independently represent an alkylene group having a number of 1 to 5 or a phenyl group which may have a substituent, and r5, r6^R7 and R8 are in a tactile manner to represent carbon. The number is 丨~5 filament, phenyl or base 'd' represents an integer from 1 to 5. [Chemical 5]

=些—胺較佳的是所有二胺的q ^於可高度地兼顧熱壓接性m8〇莫-更佳的是!莫耳%〜5G=,冋/皿接者性之方面而言 石夕氧燒二胺之效果⑸、莫。純於μ莫耳%,則添) 成分之相溶性、古”右间於⑽莫耳%’則存在與其4 作為:匕円溫接著性降低之傾向。 式(ΐ5)ί之g 所表示之石夕氧燒二胺,具體而言 為1的錢燒二胺可列舉 20 201246280 *+υο /^pn 雙(4-胺基苯基)二石夕氧烧、1,1,3,3-四苯氧基-1,3-雙(4-胺基 乙基)二矽氧烷、1,1,3,3-四苯基·1,3-雙(2-胺基乙基)二矽氧 烷、1,1,3,3.·四苯基-1,3-雙(3-胺基丙基)二矽氧烷、;ι,ι,3,3-四曱基-1,3-雙(2-胺基乙基)二矽氧烷、m3·四曱基_ι,3_ 雙(3-騎基丙基)二石夕氧烧、ι,ι,3,3-四甲基_ι,3_雙(3-胺基丁 基)二矽氧烷及1,3-二曱基-1,3-二曱氧基_1,3_雙(4-胺基丁 基)二矽氧烷等。d為2的矽氧烷二胺可列舉1,丨,3,3,5,5-六 曱基-1,5-雙(4-胺基苯基)三矽氧烷、四苯基_3,3_二 曱基-1,5-雙(3-胺基丙基)三矽氧烷、1155_四苯基_3,3_二 甲氧基-1,5-雙(4-胺基丁基)三矽氧烷、四苯基_3,3_ 二曱氧基-1,5-雙(5-胺基戊基)三矽氧烷、四曱基 _3,3_二曱氧基-1,5-雙(2_胺基乙基)三矽氧烷、1,1,5,5-四曱 基_3,3-二甲氧基-1,5·雙(4_胺基丁基)三矽氧烷、1,1,5,5-四 甲基-3,3-二曱氧基_ι,5_雙(5_胺基戊基)三矽氧烧、 1,1,3,3,5,5-六曱基_;ι,5_雙(3_胺基丙基)三矽氧烷、 U,3,3,5,5··六乙基],5_雙(3_胺基丙基)三矽氧烷及 U,3,3,5,5.六丙基+5-雙(3_胺基丙基)三矽氧烷。 上述二胺可單獨使用1種或將2種以上組合使用。 而且’上述聚醯亞胺樹脂可單獨使用1種或者視需要 將2種以上加以混合(摻合)而使用。 ,且,如上所述,於決定聚醯亞胺樹脂之組成時,較 佳成為15(rc以下之方式進行設計 ,作為聚醯 ,胺树n原料的二胺’特佳的是使用上述通式(⑷所 表示之脂肪族醚二胺。 21 201246280 40873pif 於上述聚酿亞胺樹脂之合成時,藉由將如下过式 (16)、式(Π)或式(18)所表示之化合物這樣的單官月匕 西欠if及/或早g此胺投入至縮合反應液中,可於聚合物末端 導入酸酐或二胺以外之官能基。而且,藉此可減低聚合物 之分子量,使接著劑樹脂之黏度降低,使熱壓接性提高。 [化6]Some of the amines are preferably all of the diamines q ^ can be highly compatible with the thermocompression bonding m8 〇 Mo - better! Moer % ~ 5G =, 冋 / 接 性 性 石 石 皿 皿 皿 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 石 石 石Pure to μ mol%, then) the compatibility of the components, the ancient "right (10) mole %' exists in the same direction as 4: the tendency of the temperature to decrease the adhesion. The formula (ΐ5) ί g is expressed Shixi oxygen-burning diamine, specifically 1 money-burning diamine can be listed as 20 201246280 *+υο /^pn bis(4-aminophenyl) bismuth oxide, 1,1,3,3- Tetraphenoxy-1,3-bis(4-aminoethyl)dioxane, 1,1,3,3-tetraphenyl·1,3-bis(2-aminoethyl)difluorene Oxyalkane, 1,1,3,3.·tetraphenyl-1,3-bis(3-aminopropyl)dioxane; ι,ι,3,3-tetradecyl-1,3 - bis(2-aminoethyl)dioxane, m3·tetradecyl_ι,3_bis(3-radylpropyl)doxazepine, ι,ι,3,3-tetramethyl _ι,3_bis(3-aminobutyl)dioxane and 1,3-dimercapto-1,3-dimethoxyl_1,3-bis(4-aminobutyl)di Examples of the oxirane diamine wherein d is 2, hydrazine, 3,3,5,5-hexamethylene-1,5-bis(4-aminophenyl)trioxane, Tetraphenyl_3,3-dimercapto-1,5-bis(3-aminopropyl)trioxane, 1155_tetraphenyl_3,3-dimethoxy-1,5-double (4-aminobutyl)trioxane, four Base_3,3_dimethoxy-1,5-bis(5-aminopentyl)trioxane, tetradecyl_3,3-dimethoxy-1,5-bis(2-amine Base ethyl)trioxane, 1,1,5,5-tetradecyl_3,3-dimethoxy-1,5.bis(4-aminobutyl)trioxane, 1, 1,5,5-tetramethyl-3,3-dimethoxyoxy_ι,5-bis(5-aminopentyl) trioxane, 1,1,3,3,5,5-six曱,_ι,5_bis(3-aminopropyl)trioxane, U,3,3,5,5··hexaethyl],5-bis(3-aminopropyl)tri矽 烷 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Further, the above-mentioned polyimine resin may be used singly or in combination of two or more kinds as needed, and as described above, when determining the composition of the polyimide resin, it is preferred to 15 (designed as rc or less, as a polyamine, a diamine of a raw material of an amine tree n) is particularly preferably an aliphatic ether diamine represented by the above formula ((4). 21 201246280 40873pif in the above-mentioned polyanilin resin In the synthesis, by the following formula (16) A compound such as a compound represented by the formula (Π) or the formula (18), such as a mono-supplement, and/or an early introduction of the amine into the condensation reaction liquid, may introduce an acid anhydride or a function other than the diamine at the terminal of the polymer. Further, by this, the molecular weight of the polymer can be lowered, the viscosity of the adhesive resin can be lowered, and the thermocompression bonding property can be improved. [Chemical 6]

Qx^° (i8) 0 呈而且,於(c)成分之主鏈及/或側鏈亦可具有咪 促進環氧樹脂之硬化的功能的官能基。具有咪唑, 示忒醯亞胺例如可藉由併用下述式(19)及式(20) f] 不之具有1Ή骨架之二胺作為二胺成分而獲得。 [化7] 22 201246280 4U8/JpitQx^°(i8) 0 is a functional group having a function of promoting the hardening of the epoxy resin in the main chain and/or the side chain of the component (c). The imidazole may be obtained, for example, by using a diamine having a monoterpene skeleton as the following formula (19) and formula (20) f]. [化7] 22 201246280 4U8/Jpit

聚胺基曱酸酯醯亞胺樹脂可使用下述通式(I)所表示 之樹脂。於式(I)中,R1表示包含芳香族環或脂肪族環之 2價有機基,R2表示分子量為100〜10000之2價有機基, R3表示包含4個以上碳的4價有機基,η及m分別獨立為 1〜100之整數。 [化8]As the polyamino phthalate oxime imide resin, a resin represented by the following formula (I) can be used. In the formula (I), R1 represents a divalent organic group containing an aromatic ring or an aliphatic ring, R2 represents a divalent organic group having a molecular weight of 100 to 10,000, and R3 represents a tetravalent organic group containing 4 or more carbons, and η And m are each independently an integer from 1 to 100. [化8]

〇 〇 式(I)中之R1所表示之包含芳香族環或脂肪族環的2 價有機基是二異氰酸酯殘基,較佳的是包含10 mol%〜100 mol%之下述式(II)所表示之結構。 [化9] 23 (II) 201246280 40873pifThe divalent organic group containing an aromatic ring or an aliphatic ring represented by R1 in the formula (I) is a diisocyanate residue, preferably 10 mol% to 100 mol% of the following formula (II) The structure represented. [Chem. 9] 23 (II) 201246280 40873pif

而且,其餘之二異氰酸酯殘基可列舉下述式: [化 10] CH2tX' —ch2Further, the remaining diisocyanate residues may be exemplified by the following formula: [Chemical 10] CH2tX'-ch2

等。該些二異氰酸酯殘基可使用1種或者將2種以上 組合使用。 式(I)中之R2所表示之分子量100〜10000的2價有 機基是二醇殘基。二醇殘基例如為由聚丁二烯二醇、聚異 戊二烯二醇、聚碳酸酯二醇、聚丁二烯二醇、聚醚二醇、 聚酯二醇、聚己内酯二醇、矽酮二醇等二醇所衍生之基。 R2較佳的是包含10 mol%〜100 mol%之包含下述式(III) 所表示之重複單元的結構作為二醇殘基。 [化 11] -(gh2-ch2-ch2-oh2 - (ΠΙ) 而且,其餘之二醇殘基可列舉具有下述式: 24 201246280 ^two / jpil [化 12] -(gh2-ch(ch3)-o)·、 -(C H2~CH2~〇)~ x -&lt;ch2-ch2-c^-ch2-o)-, -{d-^-CH(CH3)-0)a-&lt;CH2-CH2O)b- ( a/b=9 〜1/1 〜9 mol% 之共聚物)、 -[co-(ch2)4-co-o-(ch2)2-〇]-v -[CO-(C;H2)4-GO-〇-(CH2)2-CHCH2VO]' -[CCHOH^-CO-O-CHa-ChKCHshO]-' -[CO-(CH2)4-C0-〇-(CF^)4-0]-、 -[CCHCHzVCO-O - (ch2)6-0]' -[C0-(GH2VC0-0-CH2-C(CH3)2-CH2-0]-v -[CO - (gh2v~co-o-(ch2〉6-〇k -[G0-(CH2)g-0]-、 -[C0-O-(CH2)5-0]w' -R4-(Si(GH3)2-〇)-R4- ( R«為碳數為丨〜丨〇之有機基) 等重複單元之二醇殘基。該些二醇殘基可使用丨種或 者將2種以上組合使用。該些二醇殘基之平均分子量較佳 的是100〜10000,更佳的是500〜5000。 式(I)中之R3所表示之包含4個以上碳的4價有機 基是四叛酸酐殘基,可列舉下述式: [化 13] 25 201246280 40873pifWait. These diisocyanate residues may be used alone or in combination of two or more. The divalent organic group having a molecular weight of 100 to 10,000 represented by R2 in the formula (I) is a diol residue. The diol residue is, for example, polybutadiene diol, polyisoprene diol, polycarbonate diol, polybutadiene diol, polyether diol, polyester diol, polycaprolactone II A group derived from a diol such as an alcohol or an anthrone diol. R2 preferably contains 10 mol% to 100 mol% of a structure comprising a repeating unit represented by the following formula (III) as a diol residue. Further, (gh2-ch2-ch2-oh2 - (ΠΙ) Further, the remaining diol residue may have the following formula: 24 201246280 ^two / jpil [Chemical 12] - (gh2-ch(ch3) -o)·, -(C H2~CH2~〇)~ x -&lt;ch2-ch2-c^-ch2-o)-, -{d-^-CH(CH3)-0)a-&lt;CH2 -CH2O)b- (copolymer of a/b=9 to 1/1 to 9 mol%), -[co-(ch2)4-co-o-(ch2)2-〇]-v-[CO- (C; H2) 4-GO-〇-(CH2)2-CHCH2VO]' -[CCHOH^-CO-O-CHa-ChKCHshO]-' -[CO-(CH2)4-C0-〇-(CF^ ) 4-0]-, -[CCHCHzVCO-O - (ch2)6-0]' -[C0-(GH2VC0-0-CH2-C(CH3)2-CH2-0]-v -[CO - (gh2v ~co-o-(ch2>6-〇k -[G0-(CH2)g-0]-, -[C0-O-(CH2)5-0]w' -R4-(Si(GH3)2- 〇)-R4-(R« is a diol residue having a repeating unit such as an organic group having a carbon number of 丨~丨〇. These diol residues may be used in combination or in combination of two or more. The average molecular weight of the alcohol residue is preferably from 100 to 10,000, more preferably from 500 to 5,000. The tetravalent organic group containing four or more carbons represented by R3 in the formula (I) is a tetrahydroester residue. List the following formula: [Chem. 13] 25 201246280 40873pif

磐四驗_基可使们誠者將 上纽 合使用。 式⑴巾之n&amp;m分別獨立為卜则之整數,更佳 的是1〜50之整數。 聚胺基曱酸酯醯亞胺樹脂可藉由溶液聚合法等通常之 方法而合成。於溶液聚合法之情形時,於溶解所生成之聚 胺基曱酸酯醯亞胺樹脂的溶劑、例如N-曱基-2-吼洛11 定酮 (NMP)中溶解二異氰酸酯成分及二醇成分後,於70。。〜 180°C下使其反應1小時〜5小時,合成胺基曱酸酯寡聚 物,進一步添加四羧酸二酐而於70°C〜180°C下反應1小 時〜10小時,從而獲得聚胺基曱酸酯醯亞胺樹脂之NMP 溶液。亦可視情況進一步添加1價之醇、肟、胺、異氰酸 酯、酸酐等而繼續反應,對聚胺基曱酸酯醯亞胺樹脂之末 端進行改性。而且,於聚胺基曱酸酯醯亞胺樹脂之合成時, 26 201246280 40873pif 亦可使用水、醇、三級胺等作為觸媒。 所得之聚胺基曱酸醋醯·亞胺樹脂溶液亦可視需要择由 利用水之再沈澱法等而分離聚胺基曱酸酯醯亞胺樹脂。構 成胺基曱酸酯寡聚物之二異氰酸酯成分與二醇成分之組成 比較佳的是相對於二異氰酸酯成分1.0 mol而言,二醇成 分為0.1 mol〜1.0 mol。構成聚胺基曱酸酯醯亞胺樹脂之聚 胺基甲酸I旨寡聚物與四羧酸二酐之組成比較佳的是相對於 聚胺基曱酸酯寡聚物1.0 mol而言,四叛酸二肝為〇 ^1 〜2.0 mol。 聚胺基曱酸酯醯亞胺樹脂的藉由以四氫呋喃為展開溶 劑的凝膠滲透層析法而測定的聚苯乙烯換算之平均分子= 較佳的是5000〜500000,更佳的是1000〇〜2〇〇〇〇〇:若= 均分子量不足5000,則樹脂之強度低,若超過5〇〇〇〇〇,則 存在樹脂之溶解性差的傾向。 (C)熱塑性樹脂之調配量相對於接著劑中之除(b) 成$以外之成分總量 '亦即不揮發成分而言較佳的是 〜95質量% ’自B_階段化後之作業性之觀點考慮, =的是H)質量%〜7〇質量%。若(c)成分不足⑺質 里/〇,則接著劑熱硬化之後的硬化物之韌性並 超過=質量%,則存在Β·階段化後之黏著力上升之傾向右 交佳的疋本貝施形態之感光性接著劑 t,_s((A)成分)、⑼放射線聚合性化合物口 .卜兄二”「⑼成分」)、⑻光聚合起始劑(以下視 匱况稱為「(E)成分」)。 27 201246280 40873pif (D)放射線聚合性化合物可列舉具有乙烯性不飽和 基之化合物,乙烯性不飽和基具體可列舉乙烯基、烯丙基、 丙炔基、T烯基、乙絲、苯基乙絲、馬來醯亞胺基、 耐地醯亞胺基及(甲基)丙烯基。自反應性之觀點考慮,乙 烯性不飽和基較佳的是(甲基)丙烯基,較佳的是包含^D1) 單s月b(曱基)丙稀酸酯作為(d)成分。藉由添加單官能(甲 基)丙烯酸酯,特別是於用以B_階段化之曝光時可減低接 著劑之交聯密度,可使曝光後之熱壓接性、低應力性及接 著性成為良好之狀態。 。單官能(曱基)丙烯酸酯較佳的是5%質量減少溫度為 100C以上,更佳的是120°C以上,進一步更佳的是15〇〇c =上,最佳的是18〇。(:以上。此處,所謂5%質量減少溫度 疋使用熱重/熱示差同步分析儀(精工電子奈米科技有限公 司製造之TG/DTA6300),於升溫速度為1〇t:/min、氮氣流 (400 mL/min)下測定放射線聚合性化合物時的5%質量 減少溫度。藉由適用5%質量減少溫度高的單官能(曱基) ^烯酸酯,可抑制藉由曝光而B-階段化後所殘存的未反應 單官能(曱基)丙烯酸酯於熱壓接或熱硬化時揮發。 若為此種單官能(曱基)丙烯酸酯則並無特別限定,例 如可列舉含有縮水甘油基之(甲基)丙烯酸酯、苯酚E〇改性 (甲基)丙烤酸酯、苯酚p〇改性(曱基)丙烯酸酯、壬酚E〇 改性(曱基)丙烯酸酯、壬酚p〇改性(曱基)丙烯酸酯、含有 ,性羥基之(甲基)丙烯酸酯、含有羥基之(曱基)丙烯酸酯、 苯基苯盼縮水甘油醚(曱基)丙烯酸酯及(曱基)丙烯酸苯氧 28 201246280 4U«/3pit 基乙®曰4芳香族系(曱基)丙稀酸g旨,含有醯亞胺基之(曱基) 丙烯酸酯、.含有羧基之(曱基)丙烯酸酯、含有異冰片基之 (曱基)丙烯酸酯、含有二環戊二烯基之(曱基)丙烯酸酯以及 (甲基)丙烯酸異冰片基酯。 ^作為皁官能(曱基)丙烯酸酯,自B-階段化後之與被黏 著體之岔接性、硬化後之接著性、耐熱性之觀點考慮,較 佳的是具有胺基曱酸酯基、異三聚氰酸基、醯亞胺基、羥 基,特佳的是於分子内具有醯亞胺基之單官能(甲基)丙烯 酸@旨。 而且’可較佳地使用具有環氧基之單官能(甲基)丙稀 =。作為具有環氧基之單官能(甲基)丙烯酸醋,自保存 ,疋性m低逸氣性、耐熱及耐濕可靠性之觀點考 思,較佳的是5%質量減少溫度為150¾以上,更佳的是 上,最麵是細。^上。作為此種具有環氧基之 m甲基)丙職醋,並無特別限定,可藉由將5%質量 上。15()(:以上之多官能環氧樹脂用作原料而滿足 限定作:::能(甲基)丙稀酸醋,並無特別 “了甲基丙狀縮水甘㈣、丙稀酸縮水甘油 =、丙烯旨縮水甘㈣、 醋财甘_以外,亦可縣具有與環氧基=之;= 及乙烯性不飽和基的化合物盥多 土 之化合物。作為上舰p r甘、夕吕此衣氧树脂反應而所得 限定,例如可列舉ί氰反fΓ能基,並無特別之 芊…鼠I®日基、羧基、酚性羥基、羥基、 29 201246280 40873pif 酸酐、胺基、酼基及醯胺基。該些化合物可單獨使用i種 或組合使用2種以上。 具有環氧基之單官能(曱基)丙烯酸酯例如可藉由如下 方式而獲得:於三苯基膦或四丁基溴化銨之存在下,使i 分子中具有至少2個以上環氧基之多官能環氧樹脂、與相 對於環氧基1當量而言為0.1當量〜0.9當量之(甲基)丙稀 酸反應。而且,於二月桂酸二丁基錫之存在下,使&amp;多官能 異氰酸酯化合物與含有羥基之(甲基)丙烯酸酯及含有羥= =環氧化合物反應,或者使多官能環氧樹脂與含有異氰二 酯基之(曱基)丙烯酸酯反應,藉此而獲得含有縮水甘油基 之(曱基)丙烯酸胺基曱酸酯。 土 a 馬八有環氧基之單官能(曱基)丙烯酸酯,自保存穩 、接紐、喊加熱時及組錢之縣的低逸氣性二 成.ς及耐濕性之觀點考慮,5%質量減少溫度於可抑制膜形 ^時^加熱乾燥所造成之揮發或偏析於表面上的方面^ 二,較佳的是15(rc以上,於可抑制熱硬化時之逸 ΙδίΛ隙及制離或接著性降低之方面而t,更佳的是 .、上進步更佳的是200 C以上,於可抑制回焊時 是f應成分揮發而造成之孔隙及剝離的方面而言,最佳的 C以上。此種具有環氧基之單官能(曱基)丙烯酸酿較 的疋於分子内具有芳香環的化合物。 防止另外作為具有環氧基之單官能(甲基)丙烯酸酯,自 ,遷移或者防止金屬導體電路的腐蝕之觀點考慮,較 的疋使用使作為雜質離子之鹼金屬離子、鹼土金屬離 201246280 4U«73pit 子、_素離子、軸技料或 = 品。例如,藉由使用驗 :足=^;:之=氧樹脂作“ 職W而測定辰度。所有氣之含量可基於瓜 (甲灵述耐熱性錢度之具有魏基之單官能磐四验_基 will enable those who are willing to use the button. The n&amp;m of the formula (1) is independently an integer of the order, and more preferably an integer of 1 to 50. The polyamino phthalate oxime imide resin can be synthesized by a usual method such as solution polymerization. In the case of the solution polymerization method, the diisocyanate component and the diol are dissolved in a solvent for dissolving the produced polyaminophthalate quinone imide resin, for example, N-mercapto-2-indolyl 11 ketone (NMP). After the ingredients, at 70. . The reaction is carried out at 180 ° C for 1 hour to 5 hours to synthesize an amino phthalate oligomer, further adding tetracarboxylic dianhydride and reacting at 70 ° C to 180 ° C for 1 hour to 10 hours, thereby obtaining A NMP solution of a polyamine phthalate imine resin. Further, a monovalent alcohol, an anthracene, an amine, an isocyanate, an acid anhydride or the like may be further added as the case may be, and the reaction may be continued to modify the terminal end of the polyaminophthalate oxime imide resin. Further, in the synthesis of a polyamino phthalate ruthenium imide resin, 26 201246280 40873pif may also use water, an alcohol, a tertiary amine or the like as a catalyst. The obtained polyamino phthalic acid acetate/imine resin solution may also be subjected to separation of a polyamino phthalate imide resin by a water reprecipitation method or the like as needed. The composition of the diisocyanate component and the diol component which constitute the amino phthalate oligomer is preferably 0.1 mol to 1.0 mol based on 1.0 mol of the diisocyanate component. The composition of the polyaminocarbamate methacrylate and the tetracarboxylic dianhydride constituting the polyamino phthalate ylide resin is preferably 1.0 mol relative to the polyamino phthalate oligomer. The acid-reducing liver is 〇^1~2.0 mol. The polystyrene-equivalent average molecular weight of the polyamino phthalate yttrium imide resin measured by gel permeation chromatography using tetrahydrofuran as a developing solvent = preferably from 5,000 to 500,000, more preferably 1,000 Å. 〜2〇〇〇〇〇: If the average molecular weight is less than 5,000, the strength of the resin is low, and if it exceeds 5 Å, the solubility of the resin tends to be poor. (C) The amount of the thermoplastic resin is preferably -95% by mass relative to the total amount of the components other than (b) in the adhesive agent, that is, the nonvolatile matter. From the viewpoint of sex, = is H) mass% ~ 7 〇 mass%. If the component (c) is insufficient (7), the toughness of the cured product after the thermal curing of the adhesive exceeds ≤ mass%, and the adhesive strength after the Β·stage is increased. Photosensitive adhesive t, _s ((A) component), (9) Radiation polymerizable compound mouth, Buji 2" "(9) component), (8) Photopolymerization initiator (hereinafter referred to as "(E) ingredient"). 27 201246280 40873pif (D) The radiation-polymerizable compound may, for example, be a compound having an ethylenically unsaturated group, and the ethylenically unsaturated group may specifically be a vinyl group, an allyl group, a propynyl group, a T-alkenyl group, an ethyl group or a phenyl group. Silk, maleic imine, dyslipidimide and (meth)propenyl. From the viewpoint of reactivity, the ethylenically unsaturated group is preferably a (meth)acryl group, and preferably contains ?D1) monos-sb (indenyl) acrylate as the component (d). By adding a monofunctional (meth) acrylate, especially when the B_staged exposure is used, the crosslinking density of the adhesive can be reduced, so that the thermal crimping property after exposure, low stress, and adhesion can be made. Good state. . The monofunctional (fluorenyl) acrylate is preferably a 5% mass reduction temperature of 100 C or more, more preferably 120 ° C or more, still more preferably 15 〇〇 c = upper, and most preferably 18 Å. (: Above. Here, the so-called 5% mass reduction temperature 疋 uses a thermogravimetric/thermal differential synchronization analyzer (TG/DTA6300 manufactured by Seiko Instruments Inc.) at a heating rate of 1 〇t:/min, nitrogen. The 5% mass reduction temperature at the time of measuring the radiation polymerizable compound at a flow rate (400 mL/min). By using a monofunctional (fluorenyl) enoate having a high 5% mass reduction temperature, B- can be suppressed by exposure. The unreacted monofunctional (fluorenyl) acrylate remaining after the stepping is volatilized at the time of thermocompression bonding or thermosetting. The monofunctional (fluorenyl) acrylate is not particularly limited, and examples thereof include glycidol. (meth) acrylate, phenol E 〇 modified (meth) propane acrylate, phenol p 〇 modified (fluorenyl) acrylate, phenol phenol E 〇 modified (fluorenyl) acrylate, phenol P〇 modified (fluorenyl) acrylate, (meth) acrylate containing hydroxyl group, hydroxy group-containing (mercapto) acrylate, phenyl benzene hexyl acrylate (mercapto) acrylate and (fluorenyl) Benzene acrylate 28 201246280 4U«/3pit base ethyl 曰 4 aromatic system Acrylic acid, a (fluorenyl) acrylate containing a quinone imine group, a (fluorenyl) acrylate containing a carboxyl group, a (fluorenyl) acrylate containing an isobornyl group, and a dicyclopentadienyl group (Mercapto) acrylate and isobornyl (meth)acrylate. ^As a soap-functional (fluorenyl) acrylate, the adhesion to the adherend after B-staged, and the adhesion after hardening From the viewpoint of heat resistance, it is preferred to have an amino phthalate group, an iso-trisocyanate group, a quinone imine group, a hydroxyl group, and particularly preferably a monofunctional group having a quinone imine group in the molecule (A) Further, it is preferred to use a monofunctional (meth) acrylonitrile having an epoxy group as a monofunctional (meth)acrylic acid vinegar having an epoxy group, self-preserving, low in oxime m For the viewpoint of outgassing, heat resistance and moisture resistance reliability, it is preferable that the 5% mass reduction temperature is 1503⁄4 or more, more preferably, the uppermost surface is fine. M methyl) propyl vinegar is not particularly limited and can be made by massing 5%. 15()(: The above polyfunctional epoxy resin is used as a raw material to satisfy the limitation::: (meth)acrylic acid vinegar, there is no special "methyl propyl glycidyl (tetra), glycerol glycerol =, propylene is intended to shrink water (4), vinegar and glutinous rice _, in addition to the compound with epoxy group =; = and ethylenically unsaturated group 盥 multi-soil compound. As the ship pr Gan, 夕吕 this clothing The oxidative resin is obtained by a reaction, and examples thereof include, for example, a cyano cyanide group, and no particular hydrazine... a mouse I valent group, a carboxyl group, a phenolic hydroxyl group, a hydroxyl group, 29 201246280 40873 pif anhydride, an amine group, a decyl group, and a decylamine. These compounds may be used alone or in combination of two or more. The monofunctional (fluorenyl) acrylate having an epoxy group can be obtained, for example, by triphenylphosphine or tetrabutyl bromide. In the presence of ammonium, a polyfunctional epoxy resin having at least two or more epoxy groups in the i molecule is reacted with 0.1 equivalent to 0.9 equivalent of (meth)acrylic acid per equivalent of the epoxy group. Moreover, the &amp; polyfunctional isocyanate is combined in the presence of dibutyltin dilaurate Reacting with a hydroxyl group-containing (meth) acrylate and a hydroxy==epoxy compound, or reacting a polyfunctional epoxy resin with an isocyanate group-containing (mercapto) acrylate, thereby obtaining shrinkage Glyceryl (mercapto) acrylamide phthalate. Soil a octa-epoxy monofunctional (fluorenyl) acrylate, self-storing, connecting, shouting heating and low-lying county From the viewpoint of gas permeability, hydrazine and moisture resistance, the 5% mass reduction temperature is in the aspect of suppressing volatilization or segregation on the surface caused by heat drying of the film shape, preferably 15 (rc) In the above, it is possible to suppress the Ι Λ Λ Λ 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 热 热 Ι Ι Ι Ι Ι Ι Ι Ι Ι Ι Ι Ι Ι Ι Ι Ι Ι Ι Ι Ι Ι Ι Ι Ι Ι In terms of pores and peeling caused by volatilization, it is preferably C or more. Such a monofunctional (fluorenyl) acrylic acid having an epoxy group is a compound having an aromatic ring in the molecule. Oxyl monofunctional (meth) acrylate, self, migration or From the viewpoint of preventing corrosion of the metal conductor circuit, it is used to make the alkali metal ion or alkaline earth metal as the impurity ion from the 201246280 4U «73pit, the _ element ion, the shaft material or the product. For example, by using the test :foot=^;:==Oxygen resin for “When measuring W. The content of all gas can be based on melon.

a sriri成分,並歸別限定.可列舉以雙紛 型输kl i、S型、F型)縮水甘油趟、氫化雙紛A =水甘_、環氧乙烧加成物雙驗A及/或F型縮水甘 ^ Ί氧秘加成物伽a及/或F型縮水甘油鍵、盼 糸紛酸清賴脂之縮水甘㈣、m祕清漆樹脂之縮水 甘油醚、雙酚A酚醛清漆樹脂之縮水甘油醚、萘樹脂之縮 水甘油醚、3官能型(或4官能型)縮水甘油醚、二環戊 一歸笨紛樹脂之縮水甘油醚、二聚酸之縮水甘油酯、3官 能型(或4官能型)縮水甘油胺、萘樹脂之縮水甘油胺作 為原料的單官能(曱基)丙烯酸酯成分。 特別是為了改善熱壓接性、低應力性及接著性,較佳 的是環氧基及乙烯性不飽和基之數分別為3個以下,特佳 的是乙烯性不飽和基之數為2個以下。此種化合物並無特 別限定,可較佳地使用下述通式(丨)、通式(2)、通式(3)、 通式(4)或通式(5)所表示之化合物。於下述通式(1) 〜通式(5)中,R12及R16表示氫原子或曱基,R10、RU、 Rl3及R14表示2價之有機基,R15〜R18表示具有環氧基或 乙烯性不飽和基之有機基。 31 201246280 40873pif [化 14] _R10—〇—^ ~I R”_〒H一。一牙-C —0H2 ( 1 ) CH3 OH 0 _ _ R12 Δ_R^——CH?&quot;^&quot;一R1*-fCH2-〇-j{-C_CH2 ( 2 )a sriri ingredients, and are classified as qualified. It can be listed as double-type kl i, S-type, F-type) glycidinium, hydrogenation double A = water Gan_, epoxy Ethylene adduct double test A and / Or F-type shrinkage ^ Ί Ί 秘 秘 秘 伽 及 及 and / or F-type glycidol bond, 糸 糸 酸 清 清 ( ( ( ( ( ( ( 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 ( ( 四 ( ( ( ( ( ( ( ( ( ( a glycidyl ether, a glycidyl ether of a naphthalene resin, a trifunctional (or tetrafunctional) glycidyl ether, a glycidyl ether of a dicyclopentanyl resin, a glycidyl dimer acid, a trifunctional type ( Or a monofunctional (fluorenyl) acrylate component having a glycidylamine of a tetrafunctional type or a glycidylamine of a naphthalene resin as a raw material. In particular, in order to improve the thermocompression bonding property, the low stress property and the adhesion property, the number of the epoxy group and the ethylenically unsaturated group is preferably 3 or less, and particularly preferably the number of the ethylenically unsaturated groups is 2. Below. The compound is not particularly limited, and a compound represented by the following formula (丨), formula (2), formula (3), formula (4) or formula (5) can be preferably used. In the following general formulae (1) to (5), R12 and R16 represent a hydrogen atom or a fluorenyl group, R10, RU, Rl3 and R14 represent a divalent organic group, and R15 to R18 represent an epoxy group or an ethylene group. An organic group of a non-saturated group. 31 201246280 40873pif [化14] _R10—〇—^ ~IR”_〒H1. One tooth-C—0H2 ( 1 ) CH3 OH 0 _ _ R12 Δ_R^——CH?&quot;^&quot;-R1*- fCH2-〇-j{-C_CH2 ( 2 )

A -CH2—〇-A -CH2 - 〇 -

&quot;&quot;Sr ’ / -OH2—|T H~7—ch3 OR13 R'7&quot;&quot;Sr ’ / -OH2—|T H~7—ch3 OR13 R'7

RiJRiJ

(4) R12 *—c58*. ch3 (3) ρ1β _ _ V. JteSSSSSi (5) /N_/ \—ch2—(i \—O—R10(4) R12 *—c58*. ch3 (3) ρ1β _ _ V. JteSSSSSi (5) /N_/ \—ch2—(i \—O—R10

Rte 上述(Dl)單官能(曱基)丙烯酸酯之量相對於(D) 放射線聚合性化合物而言較佳的是20質量%〜100質量 %,更佳的是4〇質量%〜100質量%,最佳的是50質量〇 〜100質量%。藉由使單官能(曱基)丙稀酸醋為上 ° 雜之密舰及紐紐。 ()放射線1合性化合物 基)丙烯酸酉旨。此種内埽酸 s有2 s月匕以上之(曱 乙二醇二丙嫦酸g旨、三乙二,、,、特別限制,例如可列舉二 烯酸酯、二乙二醇二甲其一醇二丙烯酸酯、四乙二醇二丙 酸醋、四乙二醇二稀酸0旨、三乙二醇二甲基丙烯 土歸酸酿、三經甲基丙烧二丙烯酸 32 201246280 HUO /^pil 酯、三羥f基丙炫二丙烯酸酯、三羥甲基丙烧二曱基丙烯 酸脂、三羥甲基丙烷三曱基丙烯酸酯、丨’4-丁二醇二丙烯 酸酯、1,6-.己二醇二丙烯酸酯、1,4-丁二醇二甲基丙婦酸 脂、1,6-己二醇二甲基丙烯酸脂、季戊四醇三丙烯酸酯、 季戊四醇四丙烯酸酯、季戊四醇三甲基丙烯酸酯、季戊四 醇四甲基丙烯酸酯、二季戊四醇六丙烯酸酯、二季戊四醇 六甲基丙烯酸酯、苯乙烯、二乙烯基笨、4_乙烯基曱苯、 4-乙烯基吡啶、N-乙烯基吡咯啶酮、丙婦酸_2•羥基乙酯、 甲基丙烯酸-2-羥基乙酯、1,3-丙烯醯氧基_2_羥基丙烷、丨,2_ 曱基丙烯醯氧基-2-羥基丙烧、亞曱雙丙烯醯胺、N,N-二甲 基丙烯醯胺、N-羥曱基丙烯醯胺、三(β—羥基乙基)異三聚 氰酸酯之三丙烯酸酯、下述通式(6)所表示之化合物、丙 烯酸胺基甲酸酯、曱基丙烯酸胺基曱酸酯及丙烯酸脲酯。 [化1习 -0-^CH2CH2〇Rte The amount of the above (Dl) monofunctional (fluorenyl) acrylate is preferably 20% by mass to 100% by mass, more preferably 4% by mass to 100% by mass, based on the (D) radiation polymerizable compound. The best is 50 mass 〇 ~ 100% by mass. By making the monofunctional (mercapto) acrylic acid vinegar the upper secret ship and the New Zealand. () Radiation 1-complex compound) Acrylic acid. The phthalic acid s has a sulphuric acid s or more, and is particularly limited, and examples thereof include a dibasic acid ester and a diethylene glycol dimethyl phthalate. Monool diacrylate, tetraethylene glycol dipropionic acid vinegar, tetraethylene glycol diacid acid 0, triethylene glycol dimethyl propylene soil acid brewing, tri-methyl propylene burning diacrylic acid 32 201246280 HUO / ^pil ester, trihydroxyf-propyl propylene diacrylate, trimethylol propyl dimethacrylate, trimethylolpropane tridecyl acrylate, 丨'4-butanediol diacrylate, 1, 6-. hexanediol diacrylate, 1,4-butanediol dimethyl propyl acrylate, 1,6-hexanediol dimethacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, pentaerythritol III Methacrylate, pentaerythritol tetramethacrylate, dipentaerythritol hexaacrylate, dipentaerythritol hexamethacrylate, styrene, divinyl stupid, 4-vinyl benzene, 4-vinyl pyridine, N-ethylene Pyrrolidone, propanol-2-hydroxyethyl ester, 2-hydroxyethyl methacrylate, 1,3-propenyloxy-2 Hydroxypropane, hydrazine, 2_mercaptopropenyloxy-2-hydroxypropane, hydrazine bis acrylamide, N,N-dimethyl decylamine, N-hydroxydecyl acrylamide, tris(β - a hydroxyethyl) isocyanurate triacrylate, a compound represented by the following formula (6), an acrylamide amide, a decyl methacrylate, and a urethane acrylate. 1习-0-^CH2CH2〇

(6) R1) H2C=C- 於式(6)中,R19及R20分別獨立地表示氫原子或曱 基,g及h分別獨立地表示1〜20之整數。 該些放射線聚合性化合物可單獨使用1種或組合使用 2種以上《其中,於可充分賦予硬化後之耐溶劑性,且黏 度低、具有高的5%質量減少溫度之方面而言,較佳的是 上述通式(6)所表示之具有二醇骨架的放射線聚合性化合 物。 33 201246280 40873pif 而且’藉由使用官能基當量高的放射線聚合性化合 物,變得可貫現低應力化、低翹曲化。官能基當量高的放 射線聚合性化合物較佳的是聚合官能基當量為2〇〇叫/g以 上,更佳的是300 eq/g以上,最佳的是4〇〇eq/g 以上。藉 由使用具有聚合官能基當量為2〇〇 eq/g以上的韃骨架、胺 基曱^酯基及/或異三聚氰酸基的放射線聚合性化合物,可 使接著劑之接著性提高,且變得可實現低應力化、低翹曲 化而且,亦可將聚合官能基當量為2〇〇 eq/g以上之放射 線聚合性化合物、與聚合官能基當量不足 eq/g的放射 線聚合性化合物併用。 二(D)放射線聚合性化合物之量相對於接著劑總量而 。幸乂佳的疋10質量%〜95質量%,自晶片壓接時之潤濕擴 散性之觀點考慮,更佳的是20質量〇/〇〜9〇質量%,自Β_ I5白^化後之形狀保持之觀點考慮,最佳的是質量%〜如 質里/〇。右(D)成分不足1〇質量%,則存在B_階段化後 之黏著力變大的傾向’若超過95質量%,則存在熱硬化後 之接著強度降低之傾向。 (D),放射線t合性化合物較佳的是於室溫(〖ye〜 35°C )下為液狀,若考慮_自網格印概之脫落性,則 較佳的是紐為涵mPa · s町L步考慮印刷後 之自身流動而帶來之平坦化,収麵是麗心· s以 下。若黏度超過5000 mPa · s,則存在接 ,瞻之傾向。另外,(D)放射線聚合:酿物之黏 度的下限值為0.1 mpa · S左右。 34 201246280 HUO/jpil (D)放射線聚合性化合物較佳的是5%質量減少溫度 為120 C以上’更佳的是150°C以上,進一步更佳的是i8〇°C 以上。此處,所謂5%質量減少溫度是使用熱重/熱示差同 步分析儀(精工電子奈米科技有限公司製造之 TG/DTA6300) ’於升溫速度為1(rc/min、氮氣流(4〇〇 mL/min) T測定放射線聚合性化合物時的5%質量減少溫 度。藉由適用5%質量減少溫度高的放射線聚合性化合物, 可抑制未反應之放射線聚合性化合物於熱壓接或熱硬化時 揮發。 作為(、E)絲合起始劑(缺始劑),自提高感光度 之方面而言,較佳的是相對於波長為365 nm之光的分子 吸光係數為100 mL/g · cm以上,更佳的是2〇〇 mL/g ·⑽ 以上另外,分子吸光係數可藉由如下方式而求出:調製 樣品之G.OGl f量%乙腈溶液,使用分光光度計(日立高 新技術公,f]製造、「U-331G」(商品名))而測定該溶液之 吸光度。 此種(E)成分例如可列舉2_苄基_2_二曱基胺基 小(4·队嗎縣苯基)_ 丁酮+ 2,2_二曱氧基以二苯基乙烧 小酮、1-經基-環己基-苯基,、2_甲基小&amp;(甲基硫基)苯 嗎琳基丙酮]、2,4_二乙基例_、2_乙基葱酿及 菲酿專芳香族酮’苯偶m縮酮等苯偶醯衍生物, 2-(鄰氯笨基)·4,5-二苯基㈣二聚體、2_(鄰 (間甲氧基苯基㈣二聚體、魏苯基Κ5·苯基咪嗤Ζ 聚體、Η鄰甲氧基苯基Κ5•二苯基咪唾二聚體、2_(對甲 35 201246280 40873pif 氧基本基)-4,5-二苯基σ米吐二聚體、2,4_二(對甲氧基苯 基)-5-苯基咪唑二聚體及2-(2,4-二曱氧基苯基)_4,5_二苯基 咪唑二聚體等2,4,5-三芳基咪唑二聚體,9-苯基吖啶及丨,7_ 雙(9,9'_吖啶基)庚烧等吖啶衍生物,雙(2,6_二甲氧基苯甲醯 基)-2,4,4-三甲基-戊基氧化膦及雙(2,4,6_三曱基苯曱醯基)_ 苯基氧化物膦等雙醯基氧化膦,以及具有馬來醯亞胺之化 合物。該些化合物可單獨使用或者組合使用2種以上。 於上述光聚合起始劑中,於不含溶劑之接著劑中的溶 解性之方面而言,可較佳地使用2,2_二甲氧基_丨,2_二苯基 乙烧1酮2-节基_2-二曱基胺基_ι_(4_Ν-嗎琳基苯基)_丁酮 1 2’2 —甲氧基-1,2-一苯基乙烧-1-嗣、2-曱基甲基 硫基)苯基)-2-N-嗎啉基丙烷_ι_酮。而且,於空氣環境下, 亦:藉由曝光而變得B_階段化之方面而言,可較佳地使用 2_苄基二甲基胺基·1-(4-Ν-嗎啉基苯基)_丁酮心、2,2_二 甲氧基_1,2-二苯基乙烧-1·酮、2-曱基-1-(4-(曱基硫基)苯 基)-2-N-嗎琳基丙燒小酉同。 —(E)成分亦可包含光起始劑,所述光起始劑表現出 ^由放射線之照射而促進軌義之聚合及/或反應的功 能。此種光起始_如可列舉藉由放射_射而產生驗的 光鹼產生劑、藉由放射線照射而產生酸之光酸產生劑等, 特佳的是光驗產生劑。 體上產生劑,可進一步提高接著劑於被黏著 之冋/皿接者性及耐濕性。認為其原因在於:由光鹼產 生劑所生成线作為環㈣脂之硬化㈣而效率良好地起 36 201246280 HVJO / jpiv 作用’可使交聯密度進一步提高;而且,所生成之硬化觸 媒腐触基板等之現象較少。而且’藉由使接著劑含有光鹼 產生劑,可使交聯密度提高,且可使高溫放置時之逸氣進 一步減低。另外,可使硬化製程溫度低溫化、短時間化。 光鹼產生劑若為於放射線照射時產生鹼之化合物則可 不受特別限制地使用。作為所產生之驗,於反應性、硬化 速度之方面而言’較佳的是強鹼性化合物。 作為此種放射線照射時所產生之驗,例如可列舉味 吐、2,4-一曱基味嗤及1-曱基味嗤等咪唾衍生物,派嗓及 2,5-二曱基哌嗪等哌嗪衍生物’旅啶及i ,2_二曱基哌咬等旅 啶衍生物,脯胺酸衍生物,三曱基胺、三乙基胺及三乙醇 胺荨二烧基胺衍生物,4-曱基胺基。比。定及4_二曱胺基吼咬 等於4位進行了胺基或烷基胺基取代之吡啶衍生物,吡咯 啶及N-曱基吡咯啶等吡咯啶衍生物,二氫吡啶衍生物、三 乙一胺及.1,8-二氮雜雙環(5.4.0)十一碳稀_丨(DBU)等脂環 族胺衍生物,以及曱基苄胺、二甲基苄胺及二乙基苄胺等 苄胺衍生物。 作為藉由放射線照射而產生如上所述之驗的光驗產生 劑,例如可使用光聚合科學與技術雜誌(J〇urnal 〇f(6) R1) H2C=C- In the formula (6), R19 and R20 each independently represent a hydrogen atom or a fluorenyl group, and g and h each independently represent an integer of 1 to 20. These radiation-polymerizable compounds may be used singly or in combination of two or more kinds thereof. Among them, in order to sufficiently impart solvent resistance after curing, and having a low viscosity and a high 5% mass reduction temperature, it is preferred. The radiation polymerizable compound having a diol skeleton represented by the above formula (6). 33 201246280 40873pif Furthermore, by using a radiation polymerizable compound having a high functional group equivalent, it is possible to achieve low stress and low warpage. The radiation-polymerizable compound having a high functional group equivalent weight preferably has a polymerization functional group equivalent of 2 Å/g or more, more preferably 300 eq/g or more, and most preferably 4 〇〇eq/g or more. By using a radiation polymerizable compound having an anthracene skeleton having a polymerization functional group equivalent of 2 〇〇eq/g or more, an amine sulfonate group, and/or an iso-trisocyanate group, the adhesion of the adhesive can be improved. Further, it is possible to achieve low stress and low warpage, and a radiation polymerizable compound having a polymerization functional group equivalent of 2 〇〇eq/g or more and a radiation polymerizable compound having a polymerization functional group equivalent of less than eq/g. And use it. The amount of the second (D) radiation polymerizable compound is relative to the total amount of the binder. Fortunately, the 疋 10% by mass to 95% by mass is more preferably 20 mass 〇 / 〇 ~ 9 〇 mass % from the viewpoint of wettability of the wafer during crimping, since Β _ I5 white From the viewpoint of shape retention, the best is the mass % ~ such as quality / 〇. When the right (D) component is less than 1% by mass, the adhesive strength after the B_stage is increased. When the content exceeds 95% by mass, the subsequent strength after thermal curing tends to decrease. (D), the radiation t-complex compound is preferably liquid at room temperature (〖ye~ 35 ° C), and considering the detachment from the grid, it is preferable that the nucleus is mPa · The s-cho L step takes into account the flatness of the self-flow after printing, and the face is Li Xin·s below. If the viscosity exceeds 5000 mPa · s, there is a tendency to connect. Further, (D) Radiation polymerization: The lower limit of the viscosity of the brewed material is about 0.1 mPa·s. 34 201246280 HUO/jpil (D) The radiation polymerizable compound preferably has a 5% mass reduction temperature of 120 C or more, more preferably 150 ° C or more, and still more preferably i8 〇 ° C or more. Here, the so-called 5% mass reduction temperature is a thermogravimetric/thermal differential synchronization analyzer (TG/DTA6300 manufactured by Seiko Instruments Inc.). The heating rate is 1 (rc/min, nitrogen flow (4〇〇). 5%/min) The 5% mass reduction temperature at the time of measuring the radiation polymerizable compound. By using a radiation polymerizable compound having a high 5% mass reduction temperature, it is possible to suppress the unreacted radiation polymerizable compound from being subjected to thermocompression bonding or thermosetting. Volatilization. As a (, E) silk starter (starter), it is preferred that the molecular absorption coefficient of light with a wavelength of 365 nm is 100 mL/g · cm from the viewpoint of improving sensitivity. Above, more preferably 2 〇〇 mL / g · (10) or more, the molecular absorption coefficient can be obtained by: preparing a sample of G. OGl f % acetonitrile solution, using a spectrophotometer (Hitachi High-Tech Co., Ltd. , f] manufacture, "U-331G" (trade name)) and measure the absorbance of the solution. Such (E) component is, for example, 2 - benzyl 2 - didecylamine group (4 · Team County) Phenyl)-butanone + 2,2-dimethoxy has diphenylethyl ketone, 1-yl- Hexyl-phenyl, 2-methyl-low &amp; (methylthio)benzolinylacetone], 2,4_diethyl _, 2 _ ethyl onion and phenanthrene aromatic ketone Benzene oxime derivatives such as benzophenone ketal, 2-(o-chlorophenyl)·4,5-diphenyl(tetra)dimer, 2—(o-(m-methoxyphenyl)tetramer, weissene Κ5·Phenyl hydrazide Polymer, o-methoxyphenyl hydrazone 5•diphenyl mercapto dimer, 2_(p.35 201246280 40873pif oxy-based)-4,5-diphenyl σ m Dimer, 2,4-di(p-methoxyphenyl)-5-phenylimidazole dimer and 2-(2,4-dimethoxyoxyphenyl)-4,5-diphenylimidazole Dimers such as 2,4,5-triarylimidazole dimer, 9-phenyl acridine and anthracene, 7-bis(9,9'-acridinyl) heptane and other acridine derivatives, double (2, 6-dimethoxybenzylidene)-2,4,4-trimethyl-pentylphosphine oxide and bis(2,4,6-trimethylphenyl)-phenylphosphine oxide a bis-indenylphosphine oxide and a compound having a maleimide. These compounds may be used alone or in combination of two or more. Among the above photopolymerization initiators, solubility in a solvent-free adhesive In terms of Preferably, 2,2-dimethoxy-oxime, 2-diphenylethene-1-one 2-pyryl-2-didecylamino-_ι_(4_Ν-morphinylphenyl)-butanone 1 is used. 2'2-methoxy-1,2-phenylethene-1-yl, 2-mercaptomethylthio)phenyl)-2-N-morpholinylpropane_ι-ketone. In the air environment, also in the aspect of B_staged by exposure, 2-benzyldimethylamino-1-(4-indole-morpholinylphenyl) can be preferably used. _butanone heart, 2,2-dimethoxy-1,2-diphenylethidin-1·one, 2-mercapto-1-(4-(indolylthio)phenyl)-2- N-Merlinky is a small one. The (E) component may also contain a photoinitiator which exhibits a function of promoting the polymerization and/or reaction of the orbital by irradiation with radiation. Such a light starter may, for example, be a photobase generator which is produced by radiation emission, a photoacid generator which generates an acid by radiation irradiation, and the like, and is particularly preferably a photodetection generator. The bulk generating agent can further improve the adhesion and moisture resistance of the adhesive to the adhesive. It is considered that the reason is that the line formed by the photobase generator acts as a hardening of the ring (tetra) grease (IV) and efficiently functions as 36 201246280 HVJO / jpiv function to further increase the crosslinking density; moreover, the resulting hardened catalyst is corroded There are fewer phenomena such as substrates. Further, by allowing the binder to contain a photobase generator, the crosslinking density can be increased, and the outgas at the time of high temperature placement can be further reduced. In addition, the curing process temperature can be lowered and shortened. The photobase generator is not particularly limited as long as it is a compound which generates a base upon irradiation with radiation. As a result of the test, a strongly basic compound is preferred in terms of reactivity and curing speed. Examples of such tests for radiation irradiation include, for example, taste sputum, 2,4-mercapto-based miso, and 1-mercapto-flavored sputum derivatives, such as sputum and 2,5-dimercaptopurine. Piperazine derivatives such as azine and other derivatives of pyridine and i, 2_dimercaptopiperidine, proline derivatives, tridecylamine, triethylamine and triethanolamine oxime diamine derivatives , 4-mercaptoamine group. ratio. And 4_diamine-based bite is equal to 4-position pyridine derivative substituted with amine or alkylamine group, pyrrolidine derivative such as pyrrolidine and N-mercaptopyrrolidine, dihydropyridine derivative, three Alicyclic amine derivatives such as ethylamine and .1,8-diazabicyclo (5.4.0) eleven carbon diene (DBU), and mercaptobenzylamine, dimethylbenzylamine and diethylbenzyl A benzylamine derivative such as an amine. As a photodetector which produces the above-described test by radiation irradiation, for example, J.urnal 〇f can be used.

Photopolymer Science and Technology)第 12 卷、第 313〜 314 頁(1999 年)或材料化學(Chemistry〇fMaterials)第 11卷、第170〜176頁(1999年)等中所記載之四級銨鹽 衍生物。該些化合物可藉由照射活性光線而生成高鹼性之 三烷基胺,因此最適於環氧樹脂之硬化。 37 201246280 40873pif 光鹼產生劑亦可使用美國化學學會會刊(Jcmmal Μ American Chemical Society)第 ι18 卷、第 12925 頁(1996 年)或高分子學報(Polymer Journal)第28卷、第795頁 ( 1996年)等中所記載之胺基曱酸衍生物。 藉由照射活性光線而產生驗之光鹼產生劑可使用2 4 二曱氧基-1,2-二苯基乙烧-1-酮、ι,2-辛二酮、ι_[4_(笨武碎 基)-2·(鄰苯甲醯肟)]或乙酮及ι_[9_乙基_6_(2曱基笨$ ^ 基)-9H-咔唑-3-基]小(鄰乙醯基肟)等肟衍生物,或者作為 光自由基產生劑而市售之2-苄基-2-二曱基胺基小⑷π% 啉基苯基)-丁酮-1、2,2·二曱氧基-i,2-二苯基乙烷、孓 甲基1 (4-(曱基硫基)本基)-2_N-嗎琳基丙炫_i_g同、2_节美 2 —甲基胺基-1-(4-Ν-嗎琳基苯基)_丁嗣_ι、六芳基雙呼。坐 ,生物(於苯基上亦可取代有_素、烷氧基、硝基、^基 等取代基)、以及苯并噁唑啉酮衍生物。 土 光鹼產生劑亦可使用於高分子之主鏈及/或側鏈導入 有產生驗之基的化合物。作為此情形時之分子量,自作為 ,著劑之接著性、流動性及耐熱性之觀點考慮,重量平支句 分子量較佳的是1000〜1〇〇〇〇〇,更佳的是5〇〇〇〜3〇〇〇()。 ± t上述光鹼產生劑於並未曝光之狀態下並不顯示與環氧 橱脂之反應性,因此於室溫下之儲存穩定性非常優異。 鲅於藉由曝光而B-階段化之步驟之情形時的本實施形 ^ ^接著劑,可視需要而併用增感劑。該增感劑例如可列 舉樟腦醌、苯偶醯、聯乙醯、苯偶醯二甲基縮鲷、苯偶醯 一乙基縮酮、苯偶醯二(2_甲氧基乙基)縮酮、4,4,_二甲基苯 38 201246280. HUO/jpu •乳思0¾、z-虱恩醌 偶酿-二曱基縮酵]、蒽g昆、 恩醌、1-羥基蒽醌、卜曱基蒽醌、2_乙基蒽醌、卜溴蒽醌、 噻噸酮、2-.異丙基噻噸酮、2-硝基噻噸酮、2_甲基噻噸酮、 2,4-二甲基噻噸酮、2,4_二乙基噻噸酮、2,4_二異丙基噻噸 酮、2-氣三氟曱基噻噸酮、噻噸酮_1〇,1〇-二氧化物、噻 噸酿1-10-氧化物、安息香曱醚、安息香乙醚、異丙醚、安 息香異丁醚、二笨曱酮、雙(4_二曱基胺基笨基)酮、4,4·_ 雙一乙基胺基二苯甲酮及包含疊氮基之化合物。該些化合 物可單獨使用或者併用2種以上而使用。Photopolymer Science and Technology, Vol. 12, pp. 313-314 (1999) or Chemistry Chemistry (Chemistry〇fMaterials), Vol. 11, pp. 170-176 (1999), etc. . These compounds are most suitable for the hardening of epoxy resins by irradiating active light to form a highly basic trialkylamine. 37 201246280 40873pif Photobase generators can also be used in the Jcmmal Μ American Chemical Society, Volume 127, Page 12925 (1996) or Polymer Journal, Vol. 28, 795 (1996) Amino phthalic acid derivatives described in the years). By irradiating the active light to produce a photobase generator, it is possible to use 2 4 dimethoxy-1,2-diphenylethen-1-one, ι,2-octanedione, ι_[4_(笨武Fragmented base-2((o-benzonitrile)] or ethyl ketone and ι_[9_ethyl_6_(2曱基笨$^)-9H-carbazol-3-yl] small (o-ethylidene) An anthracene derivative, or a 2-benzyl-2-didecylamine group (4) π% phenylphenyl)-butanone-1, 2, 2·2, commercially available as a photoradical generator.曱oxy-i,2-diphenylethane, fluorenylmethyl 1 (4-(fluorenylthio)-yl)-2_N-morphinyl-propyl _i_g, 2_节美2-methyl Amino-1-(4-anthracene-phenylenephenyl)-butanthene-I, hexa-aryl double-calling. Sit, organism (substituting a substituent such as a _, an alkoxy group, a nitro group, or a phenyl group on a phenyl group), and a benzoxazolinone derivative. The alkali-based base generator can also be used for introducing a compound having a test group into the main chain and/or the side chain of the polymer. The molecular weight in this case is preferably from 1000 to 1 Å, more preferably from 5 〇〇, from the viewpoints of adhesion, fluidity, and heat resistance of the agent. 〇~3〇〇〇(). ± t The above photobase generator does not exhibit reactivity with the epoxy resin in the unexposed state, and therefore has excellent storage stability at room temperature. In the case of the step of B-staged by exposure, the sensitizer may be used in combination as needed. Examples of the sensitizer include camphorquinone, benzoin, hydrazine, benzoin dimethyl hydrazine, benzoin ethyl ketal, and benzoin bis(2-methoxyethyl) condensate. Ketone, 4,4, dimethylbenzene 38 201246280. HUO/jpu • 乳思03⁄4, z-虱恩醌-sweet-dimercapto-fermentation], 蒽g Kun, 醌, 1-hydroxy 蒽醌, Dimethyl hydrazine, 2_ethyl hydrazine, bromine oxime, thioxanthone, 2-. isopropyl thioxanthone, 2-nitrothioxanthone, 2-methylthioxanthone, 2,4- Dimethylthioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone, 2-trifluorotrifluoromethylthioxanthone, thioxanthone-1〇, 1〇 - dioxide, thioxanthene 1-10-oxide, benzoin ether, benzoin ethyl ether, diisopropyl ether, benzoin isobutyl ether, dinonanone, bis(4-didecylamino) ketone, 4,4·_ bis-ethylaminobenzophenone and a compound containing an azide group. These compounds may be used singly or in combination of two or more.

At於藉由曝光而B-階段化之步驟之情形時的本實施形 態之接著劑t,於減力性、與被歸體之密接性、使熱 C接! 生,Τ53之方面而言’亦可含有上述(c)熱塑性樹脂。 於藉由曝光而B-階段化之步驟之情形時的本實施形 恶之接著劑可視需要使用熱自由基產生劑。熱自 佳的是有機過氧化物。有機過氧化物較佳的是Ϊ分鐘 束=溫度為8Gt以上的有機過氧化物,更佳的是i分鐘 2期溫度為HKTC以上的有機過氧化物,最佳的是】分 酸酉旨、第凡過氧t異丙苯、第三丁基過氧基1乙基己 氧茂土氧基-2·乙基己酸醋、m(第三丁基過 基)_3,3,5.三甲基環已燒、仏雙(第三己基過氧基&gt;3,3,5_ 39 201246280 40873pif 三甲基環己烷及雙(4-第三丁基環己基)過氧二碳酸酯。該 些化合物可單獨使用1種或者混合使用2種以上。藉由包 含有機過氧化物,可使於曝光中所殘存之未反應放射聚合 性化合物反應,可實現低逸氣化、高接著化。 熱自由基產生劑之量相對於放射聚合性化合物之總量 而言較佳的是0.01質量%〜2〇質量%,更佳的是α1質量 %〜10質量%,進一步更佳的是〇 5質量%〜5質量%。若 熱自由基產生劑之量不足0.01質量%,則硬化性降低,添 加效果變小;若超過5質量%,則存在發現逸氣量增加、 保存穩定性降低之傾向。 熱自由基產生劑若為半衰期溫度為8〇β(:以上之化合 物則並無特別限定,例如可列舉perhexa 25B (日油公司製 造)、2’5-二曱基-2,5-二(第三丁基過氧基己烧)(】分鐘半衰 期溫度為180〇C )、Pemmiyl D (曰油公司製造)、及過氧 化 呉丙笨(1分鐘半衰期溫度為175。〇。 而且,於形成接著劑層時泡、孔隙之產生顯著之情形 有效妓於上述⑻溶劑或(D)放射線聚合性化合 物中添加消泡劑、核劑、泡輯侧等添加劑。該些添 加劑之添加量,自發揮輯抑制效果之觀點考慮,以⑻ 溶劑或㈤㈣、《合⑽合物麵加狀總量為基準 $較佳的是讀質量細上,自接著性或侧之黏度穩 疋丨生之觀點考慮,較佳的是1〇質量%以下。 :本說明書中,所謂「最低馳黏度」是表示於供箱 中、80 C下4小時之加熱步驟、或利用光量為麵邊^ 201246280 ^υδ/^pu 之光的曝光步驟中,使用黏彈性測定裝置ares (Rheometric Scientific F.E. Ltd”製造)而測定 B-階段化後 之接著劑層時的20。(:〜300°C之熔融黏度之最低值。另 外,測定板是直徑為8 mm之平行板,測定條件為升溫 5°C/min,測定溫度為20。(:〜30(TC,頻率為1 Hz。 上述B-階段化後之最低熔融黏度較佳的是2〇〇〇〇以 • s以下,更佳的是18000 pa · s以下,進一步更佳的是 15000 pa · s以下。藉由具有上述範圍内之最低熔融黏度, 可確保充分之低溫熱壓接性,即使對具有凹凸之基板等亦 可賦予良好之密接性。上述最低熔融黏度之下限值並無特 別設定,於操作性之方面而言,較佳的是1〇Pa· s以上。 於本實施形態之接著劑中,為了賦予保存穩定性、製 程適應性或抗氧化性,亦可於不損及硬化性之範圍内進一 步添加醌類、多酚類、酚類、亞磷酸酯類及硫類等之聚合 抑制劑或抗氧化劑。 口 另外,於本實施形態之接著劑中亦可含有適宜之填 料。填料例如可列舉銀粉、金粉、銅粉及鎳粉等金屬填料 氧化鋁、氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、 矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、結晶性-氧 化石夕、非晶形二氧切、氮㈣、二氧化鈦、玻璃、= 鐵及陶究等無機填料,以及碳及樹填料等有機填料。 上述填料可無論種類及形狀而並無特別限制地使用。 上述填料可根據所期望之功能而分開使用。例如,以 賦予接著㈣電性、導熱性及觸變性之目的而添加金屬填 41 201246280 40873pif 料 以賦予接著劑層導熱性、低熱膨脹性及低吸渴性之目 的而添加非金屬無機填料,以賦予接著劑層韋刃性之 添加有機填料。 該些金屬填料、無機填料或有機填料可單獨使用i種 ’組合使用2種以上。其中,於可 之導電性、導熱性、低吸濕特性、= =而5 ’較佳的疋金屬填料、無機填料祕緣性填料, ;#填料或絕緣性填料巾,於相對於樹脂清漆的分散性 二:予熱時之高的接著力的方面而言,更佳的是二At the time of the step of B-staged by exposure, the adhesive t of the present embodiment is inferior to the force-reducing property, the adhesion to the body to be bonded, and the heat C to the heat. The above (c) thermoplastic resin may also be contained. The binder of the present embodiment in the case of the step of B-staged by exposure may optionally use a thermal radical generating agent. The best heat is organic peroxides. The organic peroxide is preferably an organic peroxide having a Ϊ minute bundle = a temperature of 8 Gt or more, more preferably an organic peroxide having a temperature of HKTC or more at a temperature of 2 minutes, and the best is a sour acid. Divanic peroxybenzene, tert-butylperoxy 1 ethylhexyloxylocene tert-oxy-2-ethylhexanoic acid vinegar, m (t-butylperoxy)_3,3,5. The methyl ring has been calcined, bismuth (Third hexylperoxy) &gt; 3,3,5- 39 201246280 40873pif trimethylcyclohexane and bis(4-t-butylcyclohexyl)peroxydicarbonate. These compounds may be used singly or in combination of two or more kinds. The organic peroxide is used to react the unreacted radiopolymerizable compound remaining in the exposure, thereby achieving low gas escaping and high adhesion. The amount of the radical generating agent is preferably 0.01% by mass to 2% by mass based on the total amount of the radiation polymerizable compound, more preferably α1% by mass to 10% by mass, still more preferably 〇5 by mass. When the amount of the thermal radical generator is less than 0.01% by mass, the hardenability is lowered, and the effect of addition is small; if it is more than 5% by mass, In the case of the thermal radical generating agent, the half-life temperature is 8 〇β (the above compound is not particularly limited, and examples thereof include perhexa 25B (manufactured by NOF Corporation), 2'5-dimercapto-2,5-di (t-butylperoxyhexanone) (] minute half-life temperature of 180 〇C), Pemmiyl D (manufactured by Oyster Oil Co., Ltd.), and bismuth peroxide (The one-minute half-life temperature is 175. 而且. Moreover, the occurrence of bubbles and pores in the formation of the adhesive layer is remarkable, and it is effective to add an antifoaming agent, a nucleating agent, a bubble to the above (8) solvent or (D) radiation polymerizable compound. Additives such as the side, etc. The amount of the additives added is based on the total amount of the (8) solvent or (5) (4) and the combination of the (10) compound, and the read quality is fine. From the viewpoint of the stability of the next or side viscosity, it is preferably 1% by mass or less. In the present specification, the "lowest viscosity" is a heating step which is expressed in a tank at 4 C for 8 hours. Or use the amount of light for the side ^ 24462 In the exposure step of light of 80 μυδ/^pu, the adhesive layer of the B-staged adhesive layer was measured using a viscoelasticity measuring apparatus ares (manufactured by Rheometric Scientific FE Ltd). (: Melting of 300 ° C The minimum value of the viscosity. In addition, the measuring plate is a parallel plate having a diameter of 8 mm, and the measurement condition is a temperature rise of 5 ° C / min, and the measurement temperature is 20. (: ~ 30 (TC, frequency is 1 Hz. The above B-stage The lowest melt viscosity after that is preferably 2 〇〇〇〇 or less, more preferably 18,000 Pa·s or less, and even more preferably 15,000 Pa·s or less. By having the lowest melt viscosity within the above range, sufficient low-temperature thermocompression bonding property can be ensured, and good adhesion can be imparted even to a substrate having irregularities. The lower limit of the minimum melt viscosity is not particularly limited, and is preferably 1 〇 Pa·s or more in terms of workability. In the adhesive of the present embodiment, in order to impart storage stability, process suitability, or oxidation resistance, bismuth, polyphenols, phenols, and phosphites may be further added in a range that does not impair the curability. And polymerization inhibitors or antioxidants such as sulfur. Further, a suitable filler may be contained in the adhesive of the present embodiment. Examples of the filler include metal filler alumina such as silver powder, gold powder, copper powder, and nickel powder, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium citrate, magnesium ruthenate, calcium oxide, magnesium oxide, and aluminum oxide. Inorganic fillers such as aluminum nitride, crystalline-oxidized oxide, amorphous dioxane, nitrogen (tetra), titanium dioxide, glass, iron, and ceramics, and organic fillers such as carbon and tree fillers. The above filler can be used without particular limitation, regardless of the type and shape. The above fillers can be used separately depending on the desired function. For example, a metal filler 41 201246280 40873pif is added for the purpose of imparting electrical, thermal conductivity and thixotropy to the fourth layer, and a non-metallic inorganic filler is added for the purpose of imparting thermal conductivity, low thermal expansion, and low thirst resistance to the adhesive layer. The organic filler is added to the adhesive layer. These metal fillers, inorganic fillers or organic fillers may be used alone or in combination of two or more. Among them, the conductivity, thermal conductivity, low moisture absorption characteristics, = = and 5 'preferable base metal filler, inorganic filler secret filler, # filler or insulating filler towel, relative to resin varnish Dispersion 2: In terms of the high adhesion force when preheating, it is better that two

Mto述填雖佳的是平均練為1()师以下、且最大粒 一:。若平均粒徑超過一且最: : 在難以充分獲得破植提高之效果 制,诵#且,平均粒錢最大粒徑之下限值並無特別限 通吊情況下均為0.001 以上。 上述填料之量可根據所賦予之特 ==分與填料之合計而言較佳的 質==11質量%〜40質量%,進-步更佳的是3 低吸料▲里/°。猎由使填料之量增加,可實現低α化、 -濕化、南彈性模數化,可使切 割性)、引線接合性(超音mu i 1用切塊刀之切 地提高。 (赶曰波放率)、熱時之接著強度有效 若使填料之量增加至必需量以上,則存在黏度上升、 42 201246280 4U8/3pit 較佳的是將填料之量控制於上 為了“所要求之特性的平衡, ,之量。使用填料之情形時的混 於本實施败 ,結合變佳’亦可添加各種偶合劑。偶合劑例如二: 烷糸、鈦乐及鋁糸偶合劑。其中,於 二 言,較佳的是魏系偶合劑,更佳的是具有= ㈣咖等放射« 或分解溫度難岐⑼。eH祕合劑之彿點及/ -步更佳的是·。c以=广圭咖 分解溫度為20叱以上、且佳的是使用彿點及/或 ==劑。作為上述偶合劑之量,自其V:之效;基 刺⑽質量份二的是相對於所使用之接著 。苟ϋ.01質量份〜2〇質量份。 吸濕 此種離子_魅㈣纟、可4—4加料捕獲劑。 合物、如刊舉:三嗪硫醇化 抑制劑而為人所知的化=以 =銅離子化而溶出之鋼毒 銘系、m、m ^物:粉末狀之料、、銻系、鎂系、 合物。具_無_:定 43 201246280 4〇873pif 司製造之無機離子捕獲劑、商品名、IXE_3〇〇 (銻系)、 IXE-500 (叙:系)、IXE_6〇〇 (銻、鉍混合系)、IXE 7〇〇 (鎂、 銘混合系)、ΙΧΕ-800 (锆系)、ΙΧΕ-1100 (鈣系)等。該些 化合物可單獨使用或者將2種以上混合使用。自添加之效 果、耐熱性及成本之方面而言,上述離子捕獲劑之量較佳 的是相對於接著劑100質量份而言為〇〇1質量份〜1〇 量份。 於藉由印刷法而形成接著劑層時,自於印刷前將接」 知|J之糊劑供給至網格印刷版之開口部時可穩定地供給之考 點考慮,接著劑之觸變指數較佳的是i0〜80,自、&amp;刷£ 糊劑自網格開口部脫落之觀點考慮,更佳的是10〜^ =於印刷後藉由上述蝴自發性流動而使接著劑層之氣、; 或網格之痕跡平坦化的觀點考慮,特佳的是1G〜20。d 上述觸變指數為〗.〇以上, ^ 印刷法而供給及塗佈之上述==產:抑, 保持為良好。另外, 向可抑鋪自印舰驗給及塗佈之」 述糊劑中之「缺口」或飛白等之產生。 佈之」 接著社黏度(25ΐ &gt;,㈣ 刷版上权_的操作之觀財慮,難的是G l p至| l〇〇〇Pa.s,自印刷時糊劑自 ^ a* 更佳的是G.i Pa · s〜3⑻p雜^ 口指落之觀點考慮’ 性流動而使接著劑芦之濟:S ’於印刷後藉由糊劑自廢 慮,特佳的=== 之痕跡平坦化的觀點考 44 201246280 HUO / Jpii 上述黏度是使用E型旋轉黏度計(東京計器製造), 於3°圓錐、25°C、轉速為0.5 rpm之條件下測定時的值。 觸變指數是藉由使用E型旋轉黏度計,於25乞、轉速為】 rpm之條件下測定時之值’與於25〇c、轉速為1〇卬瓜之條 件下測定時之值之比而進行定義。 觸變指數=於1 rpm下之黏度/於1〇rpm下之黏度 〈半導體裝置&gt; —圖2〜圖5是表示本發明之半導體裝置的製造方法之 一實施形態的模式圖。本實施形態之半導體裝置的製造方 法包含:於半導體晶圓6之其中-個面上,形成包含上述 接著劑之接著劑層7的步驟(接著劑層形成步驟);藉由加 熱或曝光將接著劑層7B_階段化之步驟(B•階段化步驟 將半導體晶圓6與Β·階段化之接著劑層8 _同切開 (切割步驟)。 (接著劑層形成步驟) 作為形成接著劑層之方法,並無特別限制,例如可如 圖2所不那樣’於半導體晶圓6之形成有電路之面的相反 侧之面(背面)’藉由網版印刷法而印刷接著劑5。 =細彡H之接可射㈣上述铸體封 造方法中之上述接著劑5。 而且’於利用網版印刷法之接著劑塗佈步驟中 印刷版之開°部3設純半導體晶圓 的印刷版。藉此而如圖i所示那樣,於半導體曰 固6 4面上’與半導體晶圓6之周緣部相比而言向内= 45 201246280 40873pif 縮小地形成厚度均一之接著劑層7。 於半導體晶圓6之周緣部之更内側形点 情形時,接著劑層7並不覆蓋半導體晶圓6之=層= 低接著劑層7之端部雜起,且可提高接著劑/ 二 性。藉由於半導體晶圓6之周緣部的内曰 勺 接著劑層7之厚度變均一,於後述之==層7’ 中,可使晶圓上所施加之壓力更均一,可;:::二步驟 容易ί。,均一地形成接著劑層7之厚度,則變得 中’單片化之半_片自切割膜上被 === 低之被稱為「晶片飛出」之問題。 ^艮羊降 ::::印刷:,通常大致分為兩種。一種是使用於 工蓺^ 案化之開口部_胃金屬印刷版的 於缸藝中,於所欲印刷之對象上設置金屬印刷版, 用被稱為刮板4之錢板而掃金料舰上所搭載之黑 佈墨水。藉由該步驟,按照金屬印刷版上ί a又之開口圖案的形狀而塗佈墨水。 作為另一種網版印刷法,存在有使用僅僅殘留以不鎮 ,·、尼龍及聚料之絲編織而準備_格巾所欲塗佈之部 分,其餘以樹脂等填埋的所謂網格印刷版的卫藝。於該工 藝中1被稱為刮刀之樹脂製或金屬製板崎網格印刷版 士所搭載之墨水。藉由該步驟’墨水浸透至網格印刷版之 石脂等填埋之開°部。其次,使用由聚胺基曱酸酉旨或 夕膠專所製成之職4而於網袼印刷版上掃過。藉由該步 46 201246280 W5/Jpll ’印刷步驟 驟,浸透至開口部的墨水被轉印於印刷對象上 結束。 種印刷工藝,均可僅僅 佈接著劑,因此可減低 於本實施形態中,無論是哪一 於所期望之位置、區域選擇性地塗 接著劑之浪費,且材料良率優異。 於使时屬印職之工藝巾,若概㈣之範圍内進 灯印刷’則由於在開Π部並無任何部件,因此在開口部並 未產生相對於刮板之壓力的來自印刷版的應力,壓力集中 於刮板之中央,刮板中央部較強地麗人至開口部,從而於 開口部之中央存在膜厚降低之傾向。亦即,一般情況下開 口部越廣’則越存在刮板之中央部更強地壓入,中央之膜 厚降低之傾向。 另一方面,於使用網格印刷版之工藝中,於開口部亦 存在網格絲’因此產生相對於刮板之壓力的來自網格印刷 版的應力。亦即,於刮板中央部,由於開口部所具有之網 格絲發揮作為支撐部件之功能,因此刮板並未較強地壓入 至開口部。因此,於刮板中央部亦可不使膜厚降低地獲得 均一之接著劑層。 於本貫施形態之網版印刷法中,自於半導體晶圓整個 面之比較廣的範圍内設置膜厚均一之接著劑層的觀點考 慮,較佳的是使用網格印刷版之工藝。 於接著劑層形成步驟中,除了上述網版印刷法以外, 亦可使用喷墨印刷法、旋塗法、間隙塗佈法等而於半導體 晶圓6之規定區域形成接著劑層7。 201246280 40873pif ^〇t ' ^ ^ ,可藉由將微滴化之接著劑自被稱為 4之r:* 附至作為印刷對象的半導體晶圓6之所期 = +此於目標區域形成接著劑層7。而且,於 = 可H由將接著触塗於在周緣部職有遮蔽膠 I as ing tape)的半導體晶圓6上,然後將遮蔽膠帶剝 、此而目;^區域形成接著劑層7。另外,於間隙塗 中屯T藉由於平坦之平台上載置於周緣部貼附有遮蔽 = 晶圓6,其次於半導體晶圓6之端部放置接 者二而使《^定為所期望之間隙高度的敷料器平行移動,將 接著劑塗佈於日日日圓上之後,將遮蔽膠帶剝去,由此而於目 標區域形成接著劑層7。 (Β-階段化步驟) 上述接著劑7是於藉由加熱或曝光而Β-階段化後具有 對於^皮黏著體之接著性的接著劑。騎所塗佈之接著劑 層’藉由㈣等加熱裝置或曝光裝置而將構成接著劑層7 之接著劑Β-階段化。 八於熱硬化性接著劑之情形時,藉由加熱而使接著劑中 戶2 3之溶劑揮發,或者與溶劑揮發之同時而使熱硬化性樹 脂反,’ Β·階段化之熱硬化性接著劑層具有適宜之黏著性 與接著性。具體而言’接著劑層固定於半導體晶圓上。 ―、另一方面’於感光性接著劑之情形時,藉由曝光而進 行感光性接著劑中所含之光聚合起始劑與放射線聚合性化 合,之聚合反應,Β-階段化之感光性接著劑層具有適宜之 黏著性與接著性。具體而言,感光性接著調©定於半導 48 201246280 4U8/ipif 體晶圓上。自避免由於氧所造成之光聚合反應之阻礙的觀 點考慮,較佳的是於氮氣環境下、或真空條件τ、或將感 光性接著綱與透明之覆蓋顯壓之狀態下進行曝光。 更詳細而言’藉由加熱或曝光而Β-階段化之接著劑層 8具有藉由切割而進行單片化及切割時可自支撐體上剝離 的適宜之黏著性、以及對於半導體晶片及玻璃基板等被黏 著體的接著性。 根據加熱或曝光後之接著劑層於3〇&lt;t下之表面黏著 力為200gf/cm2以下而表示接著劑層被^階段化。 若於30°C下之表面黏著力超過2〇〇gf/cm2,則除了具 有接著劑層之於室溫下的表面之黏著性變高,操作性降: 之領向以外’且存在與切割後之切割膜的剝離性降低而造 成拾取性降低之傾向。而且,若於贼下之表面黏著力為 1 gf/cm2卩下,則存在如下之傾肖:接著劑之黏著性變低, 於切割時在接著劑與_膜之界面浸人水,從 «。 加熱或曝光後之接著劑層於12〇〇c下之表面黏著力較 佳的是200 gf/cm2以上。若於12〇。〇下之表面黏著力不足 200 gf/cm ’則存在如下之傾向:有損熱壓接性,於熱壓接 時產生孔隙,熱壓接溫度高溫化。而且,於下之表 面黏著力為500 gf/cm2以上之情形時,存在如下之傾向· 於熱壓接時過度地潤濕擴散,於晶片側面滲出接著劑。 上述表面黏著力是以如下方式而測定之值。藉由網版 印刷法等將接著劑塗佈於碎晶圓上’於藉由加熱而B-階段 49 201246280 40873pif 化之步驟之情形時,藉由於烘箱中進行80°c、4小時之加 熱步驟,於藉由曝光而B-階段化之步驟之情形時,藉由^ 用光量為1000 mJ/cm2之光的曝光步驟,分別對所得之塗 膜進行B-階段化。其後,使用RHESCA CQ_ati〇n Umit^ 製造之探針重疊試驗機,於探針直徑為51 mm、剝離速度 為10 mm/s、接觸荷重為1〇〇 gf/cm2、接觸時間為1秒之條 件下,測定30°C及120°C下之接著劑層8表面之黏著力; (切割步驟) 其次,自半導體晶圓側對塗佈了接著劑之上述半導體 晶圓6進行切割,製作單片化之半導體晶片。亦即,藉由 切割機而將半導體晶圓6切斷,藉此而將半導體晶圓6切 分為多個半導體晶片13a及半導體晶片13b。較佳的是於 該切割步驟之前,於塗佈有上述接著劑之半導體晶圓6的 背面貼附切_。可視需要—面進行加熱—面進行貼附。 例如’較佳的是於藉由切割膜1〇而將整體固定於框架(晶 圓環)9上之狀態下(參照圖3 )、使用切割刀而進行(史 照圖4)。單片化之附接著劑層的半導體晶片^可使用晶 片接合裝置等而拾取(參照圖5)。 如圖6所示,將藉由切割步驟而所得之半導體晶片13a 配置於另仃準備之支撑部件14上,且將半導體晶片既 配置^預先接合於支撐部件上的半導體晶片 13a上。此 日曰’藉由熱壓接接著觸16及接著劑層1γ,而將半導體 曰曰片^與支撑部件14'及半導體晶片13b與半導體晶片 l2a接著’半導體晶#財撐部件或半導體⑼接著固定。 50 201246280 4ϋ873ριί· 其後,藉由加熱進行接著劑層之熱 =半導體晶片上之接合塾與支撐部件連 材料15將半導體晶片與接合線一 之半導體塊。 U减4如圖6所示 f由以上所說明之半導體封裝的製造方法,可夢由印 刷工表而將對半導體晶片與支撐部件曰 此之間進行接著的接著難僅接著缝佈 無論接著劑之組成為何種,均可藉由變更印: 為所期望之膜厚。因此’可減低半導體封裝的製 ΪΞΪ接著劑之浪費,藉由單—之接著劑而塗佈為多 [實例] 之說明。但本發 以下’列舉實例對本發明加以更具體 明並不受以下實例限定。 (熱塑性樹脂之合成) —冬' 本基甲炫*-4,4 -一異II酸酉旨(I Q m〇i)、二苯基甲 烧-2,4'-二異氰酸g旨(1〇 m〇1)及平均分子量為誦之聚 It醇(0.8m〇1)與丨_曱基·2_吡咯啶_加以混合,於氮氣 兄下、i〇oc下反應1小時後,添加4,4'-氧雙鄰苯二曱 ( 1.0 mol)及ι_曱基_2_〇比σ各〇定_,進一步於i4〇°c下 攪拌3小時。其次,於其中進—步添加m^(Q2m〇i),Mto said that the best is the average practice of 1 () division, and the largest grain one:. If the average particle size exceeds one and the most: : In the case where it is difficult to obtain the effect of improving the planting, the lower limit of the maximum grain size of the average grain is not particularly limited to 0.001 or more. The amount of the above filler may be preferably from the total of ==11% by mass to 40% by mass based on the total of the imparted == points and the filler, and more preferably 3 times lower by ▲ liters/°. By increasing the amount of filler, it is possible to achieve low alpha, wet, and south elastic modulus, which can improve the cutting property and wire bonding (the super sound mu i 1 is improved by the cutting knife.曰 放 放 ) 、 、 、 、 、 、 、 、 、 、 、 、 若 若 若 若 若 若 若 若 若 若 若 若 若 若 42 42 42 42 42 42 42 42 42 42 42 42 42 42 42 42 42 42 42 42 42 42 42 42 42 42 42 The balance of the amount, the amount of mixing in the case of the use of the filler, the combination of better, can also add a variety of coupling agents. Coupled agents such as two: alkane, titanium and aluminum bismuth coupling agents. In other words, it is preferred to use a Wei system coupling agent, and it is better to have a radiation such as = (4) coffee or the decomposition temperature is difficult (9). The point of the eH secret agent and / / step is better. · c to = Guangzhou The decomposition temperature of the coffee is 20叱 or more, and it is preferable to use the Buddha's point and/or the == agent. The amount of the above coupling agent is from the effect of V: the base thorn (10) parts by mass is relative to the used one.苟ϋ.01 parts by mass to 2 parts by mass. Moisture absorbing such ions _ enchantment (four) 纟, can be 4-4 feeding agent. Compounds, as disclosed in the following: triazine thiolation inhibitors are known to be known as = oxidized by copper ionization, m, m ^ material: powdery material, lanthanide, magnesium Department, compound. _无_: 定43 201246280 4〇873pif Division of inorganic ion trapping agent, trade name, IXE_3〇〇 (锑), IXE-500 (“:), IXE_6〇〇 (锑,铋 mixed system), IXE 7〇〇 (magnesium, Ming mixed system), ΙΧΕ-800 (zirconium), ΙΧΕ-1100 (calcium), etc. These compounds may be used singly or in combination of two or more. The amount of the ion trapping agent is preferably 1 part by mass to 1 part by mass based on 100 parts by mass of the adhesive agent, in terms of effect, heat resistance and cost. When the layer is next, it is considered that the paste of the adhesive can be stably supplied from the opening of the screen printing plate before printing, and the thixotropic index of the adhesive is preferably i0 to 80. From the viewpoint of the peeling off of the paste from the opening of the mesh, it is more preferable that 10~^ = after the printing, the above-mentioned butterfly is spontaneous From the viewpoint of flattening the gas of the adhesive layer or the trace of the mesh, it is particularly preferable that the above-mentioned thixotropic index is 〇.〇 or more, ^ the above-mentioned supply and coating by the printing method ==Production: Yes, keep it good. In addition, it can produce the "gap" or whiteness in the paste that can be suppressed and coated by the self-printing ship. The cloth's viscosity (25ΐ &gt; (4) The right to operate on the right side of the brush _, the difficulty is G lp to | l〇〇〇Pa.s, from the printing paste from ^ a * better Gi Pa · s ~ 3 (8) p miscellaneous ^ The point of view of the mouth refers to the 'sexual flow and the adhesive agent Lu Zhiji: S' is self-deprecating after printing by the paste, the viewpoint of the flattening of the trace of the excellent === 44 201246280 HUO / Jpii It is a value measured by an E-type rotational viscometer (manufactured by Tokyo Keiki Co., Ltd.) under the conditions of a 3° cone, 25° C., and a rotation speed of 0.5 rpm. The thixotropic index is the ratio of the value measured by the E-type rotational viscometer at 25 rpm and the rpm, and the value measured at 25 〇c and the rotation speed is 1 〇卬. And define it. The thixotropy index = viscosity at 1 rpm / viscosity at 1 rpm <Semiconductor device> - Figs. 2 to 5 are schematic views showing an embodiment of a method of manufacturing a semiconductor device of the present invention. The method of manufacturing a semiconductor device according to the present embodiment includes a step of forming an adhesive layer 7 containing the above-described adhesive on one surface of the semiconductor wafer 6 (adhesive layer forming step); and heating or exposure is followed by Step 7B_staged step (B•staged step of cutting the semiconductor wafer 6 with the Β·staged adhesive layer 8_ (cutting step). (Binder layer forming step) as an adhesive layer The method is not particularly limited. For example, as shown in FIG. 2, 'the surface (back surface) on the opposite side of the surface on which the circuit of the semiconductor wafer 6 is formed' is printed by the screen printing method.彡H can be attached to (4) the above-mentioned adhesive 5 in the above-mentioned casting method. Further, 'in the adhesive coating step of the screen printing method, the printing portion of the printing plate 3 is provided with a printing plate of a pure semiconductor wafer. As a result, as shown in FIG. 1, a uniform thickness of the adhesive layer 7 is formed on the semiconductor screed surface 4' inwardly with respect to the peripheral portion of the semiconductor wafer 6 inwardly = 45 201246280 40873pif. The periphery of the semiconductor wafer 6 In the case of the inner side dot, the adhesive layer 7 does not cover the semiconductor wafer 6 = layer = the end of the low adhesive layer 7 is mixed, and the adhesive / dimorphism can be improved. By the peripheral portion of the semiconductor wafer 6 The thickness of the inner layer of the adhesive layer 7 becomes uniform, and in the later == layer 7', the pressure applied on the wafer can be more uniform, and the second step can be easily formed. The thickness of the agent layer 7 becomes a problem in which the 'single-chip half-piece is low-=== on the self-cut film is called "wafer flying out". ^艮羊降::::Printing: Usually, it is roughly divided into two types. One is used in the opening process of the _ gastric printing plate, and the metal printing plate is placed on the object to be printed, which is called the squeegee 4. The black cloth ink carried on the gold ship is swept by the money board. By this step, the ink is applied according to the shape of the opening pattern on the metal printing plate. As another screen printing method, there is a use only The residue is prepared by weaving the yarn without the town, nylon, and the material of the material. The part to be coated is the one to be coated, and the rest is filled with resin or the like. The so-called grid printing version of Wei Yi. In this process, 1 is called the resin of the scraper or the ink of the metal plaque printing press. By this step, the ink is saturated into the stone of the grid printing plate. The opening part of the landfill such as fat. Secondly, it is swept on the screen printing plate using the position 4 made of polyamine bismuth citrate or yum gum. By this step 46 201246280 W5/Jpll ' In the printing step, the ink that has penetrated into the opening is transferred to the printing target. The printing process can be performed only with the adhesive, so that it can be reduced to less than the desired position and region. Selectively apply the waste of the adhesive, and the material yield is excellent. In the process of printing the craft towel, if it is printed in the range of (4), there is no part in the opening part, so in the opening part The stress from the printing plate with respect to the pressure of the squeegee is not generated, the pressure is concentrated on the center of the squeegee, and the center portion of the squeegee is strongly attracted to the opening, so that the film thickness tends to decrease in the center of the opening. That is, in general, the wider the opening portion is, the more the center portion of the squeegee is pressed in, and the film thickness at the center tends to decrease. On the other hand, in the process of using the grid printing plate, there is also a mesh wire in the opening portion, thus generating stress from the grid printing plate with respect to the pressure of the blade. That is, in the center portion of the squeegee, since the mesh member of the opening portion functions as a supporting member, the squeegee is not strongly pressed into the opening portion. Therefore, a uniform adhesive layer can be obtained at the center of the squeegee without lowering the film thickness. In the screen printing method of the present embodiment, it is preferable to use a process of using a grid printing plate from the viewpoint of providing a film thickness uniform adhesive layer over a relatively wide range of the entire surface of the semiconductor wafer. In the adhesive layer forming step, in addition to the above-described screen printing method, the adhesive layer 7 may be formed in a predetermined region of the semiconductor wafer 6 by an inkjet printing method, a spin coating method, a gap coating method or the like. 201246280 40873pif ^〇t ' ^ ^ , by attaching the microdroplet adhesive to the semiconductor wafer 6 as the printing target from the r:* of 4 = + this forms an adhesive in the target area Layer 7. Further, at = H can be subsequently applied to the semiconductor wafer 6 having the masking tape on the peripheral portion, and then the masking tape is peeled off, and the region is formed into the adhesive layer 7. In addition, in the gap coating, the 屯T is attached to the peripheral portion by the flat substrate, and the mask is placed on the peripheral portion, and the second portion of the semiconductor wafer 6 is placed next to the second wafer to make the desired gap. The height applicator moves in parallel, and after the adhesive is applied to the sunday, the masking tape is peeled off, thereby forming the adhesive layer 7 in the target area. (Β-staged step) The above-mentioned adhesive 7 is an adhesive having adhesion to the adhesive after being subjected to heating or exposure. The adhesive layer applied to the rider is subjected to the step of forming the adhesive layer 7 by a heating means or an exposure means such as (4). In the case of a thermosetting adhesive, the solvent of the household 23 in the adhesive is volatilized by heating, or the thermosetting resin is reversed while volatilizing the solvent, and the thermal hardening property of the step is followed by The agent layer has suitable adhesion and adhesion. Specifically, the adhesive layer is fixed on a semiconductor wafer. On the other hand, in the case of a photosensitive adhesive, the photopolymerization initiator contained in the photosensitive adhesive is combined with radiation polymerization by exposure, and the polymerization reaction is carried out. The layer of the agent then has suitable adhesion and adhesion. Specifically, the sensitivity is determined by the semi-conducting 48 201246280 4U8/ipif body wafer. From the viewpoint of avoiding the inhibition of the photopolymerization reaction by oxygen, it is preferred to carry out the exposure in a state of a nitrogen atmosphere, a vacuum condition τ, or a state in which the photosensitive substrate and the transparent cover are embossed. More specifically, the adhesive layer 8 which is formed by heating or exposure has a suitable adhesion which can be detached from the support when dicing by dicing and cutting, and for semiconductor wafers and glass The adhesion of the substrate or the like to the adherend. The adhesive layer is staged according to the surface adhesive force at 3 Å &lt; t after the heating or exposure is 200 gf/cm 2 or less. If the surface adhesion at 30 ° C exceeds 2 〇〇 gf / cm 2 , the adhesion of the surface having the adhesive layer to room temperature becomes high, and the workability is lowered: The peeling property of the latter dicing film is lowered, and the pick-up property tends to fall. Moreover, if the surface adhesion under the thief is 1 gf/cm2, there is the following: the adhesiveness of the adhesive becomes low, and the water is immersed at the interface between the adhesive and the film during cutting, from « . The surface adhesion of the adhesive layer after heating or exposure at 12 〇〇c is preferably 200 gf/cm2 or more. If at 12 〇. The surface adhesion of the underarm is less than 200 gf/cm ′, which has the following tendency: loss of thermal crimping property, generation of voids during thermocompression bonding, and high temperature of thermocompression bonding. Further, when the surface adhesive force is 500 gf/cm2 or more, there is a tendency that excessive diffusion and diffusion occur during thermocompression bonding, and an adhesive is oozing out on the wafer side. The above surface adhesion is measured in the following manner. When the adhesive is applied to the broken wafer by screen printing or the like, in the case of the step of heating by B-stage 49 201246280 40873, the heating step of 80 ° C and 4 hours is carried out in the oven. In the case of the step of B-staged by exposure, the obtained coating film was separately B-staged by an exposure step using light having a light amount of 1000 mJ/cm 2 . Thereafter, a probe overlap tester manufactured by RHESCA CQ_ati〇n Umit^ was used with a probe diameter of 51 mm, a peeling speed of 10 mm/s, a contact load of 1 〇〇gf/cm2, and a contact time of 1 second. The adhesion of the surface of the adhesive layer 8 at 30 ° C and 120 ° C is measured. (Cutting step) Next, the semiconductor wafer 6 coated with the adhesive is cut from the semiconductor wafer side to make a single sheet. Sliced semiconductor wafers. That is, the semiconductor wafer 6 is cut by the cutter to divide the semiconductor wafer 6 into a plurality of semiconductor wafers 13a and 13b. Preferably, before the cutting step, the back surface of the semiconductor wafer 6 coated with the above-mentioned adhesive is attached. If necessary, the surface is heated - the surface is attached. For example, it is preferable to use a dicing blade in a state in which the entire film is fixed to the frame (ring ring) 9 by cutting the film 1 (see Fig. 4). The semiconductor wafer of the singulated adhesive layer can be picked up using a wafer bonding apparatus or the like (see Fig. 5). As shown in Fig. 6, the semiconductor wafer 13a obtained by the dicing step is disposed on a further support member 14 and the semiconductor wafer is pre-bonded to the semiconductor wafer 13a on the support member. In this case, the semiconductor wafer 2 and the support member 14' and the semiconductor wafer 13b are bonded to the semiconductor wafer 12a followed by the 'semiconductor crystal' or the semiconductor (9) by thermal bonding followed by the contact 16 and the adhesive layer 1γ. fixed. 50 201246280 4 ϋ ρ ρ 其 其 其 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = U minus 4 as shown in FIG. 6 is a manufacturing method of the semiconductor package described above, and it is conceivable that the semiconductor wafer and the supporting member are subsequently bonded by the printing worksheet. Whatever the composition, it can be changed by printing: the desired film thickness. Therefore, the waste of the adhesive for the semiconductor package can be reduced, and the coating can be applied as a plurality of [examples] by a single adhesive. However, the present invention is more specifically described below by the following examples, and is not limited by the following examples. (Synthesis of Thermoplastic Resin) — Winter' BenQ-Hybrid*-4,4-Iso-II Acid (IQ m〇i), Diphenylmethyl--2,4'-Diisocyanate g ( 1〇m〇1) and poly-anol (0.8m〇1) with an average molecular weight of 诵 and 丨_曱基·2_pyrrolidine_ were mixed, and reacted under nitrogen for 1 hour under i〇oc, added 4,4'-oxybisphthalic acid (1.0 mol) and ι_mercapto-2_〇 ratio σ were determined to be further stirred at i4 ° °c for 3 hours. Secondly, add m^(Q2m〇i) in step by step,

於1〇(rC下搜拌1小時而獲得反應液。將所得之反應液放 入至劇烈攪拌之水中而過濾分離沈澱物,於真空中、6CTC 下乾燥48小時而獲得聚胺基曱酸酯醯亞胺樹脂。使用GPC 51 201246280 40873pif 測定所得之聚胺基曱酸酯醯亞胺樹脂之分子量,結果是以 聚苯^烯換算而言重量平均分子量(Mw)為937〇〇,數量 平均刀子畺(Μη)為38800。而且,所得之聚胺基甲酸酯 醯亞胺樹脂於室溫下為半固體形狀,玻璃轉移溫度(Tg) 為 _40 C 〇 (接著劑之調製) (液狀接著劑1) 將上述聚胺基甲酸酯醯亞胺樹脂50質量份、 :YDCN700-7」(曱酚酚醛清漆型環氧樹脂、東都化成股 伤有限公司製造、商品名)12.5質量份、「TrisP-PA」 (4,4’-[l-[4-[l-(4-羥基苯基)―丨―曱基乙基]苯基]乙_1:1_二基] ,酚、本州化學工業股份有限公司製造、商品名)5 〇質 置份及卡必醇乙酸酯(和光純藥股份有限公司製造)16〇 質量份投入至設置於油浴中的燒瓶内,於氮氣環境下、8 〇 t 下進行加熱攪拌而調製溶液。於所得之溶液中添加 「SO-C2」(二氧化矽填料、Adrnatechs股份有限公司製 造、商品名)10.0質量份及rTPPK」(四苯基硼酸四苯基 鱗、東京化成工業股份有限公司製造、商品名)0.2質量 份’放入至擂潰機中進行混練後,於5 Torr以下進一步進 行1小時之消泡混練。其次,添加卡必醇乙酸酯5.0質量 份作為印刷用溶劑,進行消泡混練而調整黏度,獲得於轉 速為0.5rPm下之黏度為26 Pa. s,觸變指數為1.1之液狀 的液狀接著劑1。 (液狀接著劑2) 52 201246280 -TW / -/ ΜΑλ 將「YDCN700-7」30 質量份與「Aronix m]4〇」(N_ 丙烯醯氧基乙基六A鄰苯二f輕胺、東亞合成股份有限 公司製造、商品名)40質量份投入至設置於油浴中的燒瓶 内,於氮氣環境下、60°C下進行加熱攪拌而使其溶解。其 次,於燒瓶内添加「I_379EG」(2_(二曱基胺基)_2 (4_甲^ 苄基)-1-(4··Ν-嗎啉基苯基)丁烷_丨酮、ciba 了叩⑽ 造、商品名)0.4質量份、r1B2pz」(1_苄基_2_苯基咪唑、 四國化成丄業股份有限公司製造、商品名)〇 2質量份而 進行攪拌,獲得於轉速為〇·5 rpm下之黏度為13 Pa · s、 觸變指數為1.0的液狀接著劑2。 (接著劑層之形成) 實例1〜實例4 使用設置有V-screen V50網格印刷版(NBC MESHTEC股份有限公司製造)之MK_838SV印刷機 (MINAMI股份有限公司製造),於5吋^之矽晶圓之背 面亡,於矽晶圓之周緣部(以下亦稱為「端部」)並不形成 接著劑層之方式,將所得之液狀接著劑丨或液狀接著劑2 印刷塗佈為圓形狀,分別製作附接著劑層的晶圓。藉由目 視確認印刷後之接著劑之様子,結果是無飛白等,可設置 均一之接著劑層。 比較例1 與實例之接著劑層之形成同樣地使用設置有v_screen V50網格印刷版的Mk_838sv印刷機而進行印刷塗佈,製 作附接著_的晶圓。但是變更5叶φ之⑪晶圓之位置設 53 201246280 W8 / jpif 定,以印刷版開口部覆蓋矽晶圓整個面的方式進行印刷, 於矽晶圓端部亦塗佈接著劑。 (接著劑層之均一性之評價) 使用烘箱將如上所述而製作之實例丨〜實例3及比較 例1的附接著劑層的晶圓於8〇l下加熱4小時,將接著劑 層B-階段化。而且,使用平行曝光機(Luminas股份有限 公司製造、商品名「ML-210FM光罩對準曝光機」),於氮 氣環境下,以1000 mj/cm2對實例4之附接著劑層的晶圓 進行曝光,將接著劑層B-階段化。關於各個附接著劑層的 晶圓,使用非接觸膜厚計(基恩士股份有限公司製造、商 。〇名「KS-1100」)測定矽晶圓端部與接著劑層端部之距 離、接著劑層之厚度、接著劑層端部之隆起。端部之隆起 是接著劑層之平坦部與隆起部分之最高點的高低差。將所 得之結果示於表1中。 [表1] 單位 實例 1 實例 2 實例 λ 實例 4 比較例 1 液狀接著劑 妙晶圆i*部與接著劑層端部之距離 接著劊層之厚府 mm 1 1 1 2 1 5 2 2 1 0 接著劑層端部之隆起 接著劑層端。卩之隆起相對於接著劑層之厚麼的fc卜盘 μηι μιη % 28 7.8 28 29 8.0 27 28 7.8 28 39 11.7 30 28 23.7 — ------ 85 如表1所示,於實例之接著劑層中,端部隆起相對於 接著劑層厚度之比率與比較例相比而言大幅度降低。由此 可確認:藉由於半導體晶圓之周緣部之更内側形成接著 層,即使於接著劑層端部亦保持接著劑層之均一性。 54 201246280 HUO/jpu 圓上層壓切=t比較例中所製作之附接著劑㈣晶 對平坦性造成影響,可無問題地4===不 於實例2〜實例4之欲曰同由.I私直至切剎步私。 至切割步驟。相對於:a曰:二無問題地進行製程直 膜之戶壓播,於/,於1之砍晶圓中,於切割 ' L ’於石夕晶圓周緣部產生小的裂痕,引起矽晶圓 損而且,若對切割後之石夕晶圓進行觀察,則主要於 晶圓周緣部中產生晶片飛出。 、 [產業上之可利用性] 藉由本發明,可提供以均一之膜厚而於半導體晶圓上 形成接著劑層的附接著劑層的半導體晶圓、使用該附接著 劑層的半導體晶圓的半導體裝置的製造方法及半導體裝 置。 【圖式簡單說明】 圖1是表示附接著劑層的半導體晶圓之實施形態的模 式斷面圖。 s 圖2是表示半導體裝置的製造方法之一實施形態的模 式圖。 圖3是表示半導體褒置的製造方法之一實施形態的模 式圖。 圖4是表示半導體裝置的製造方法之一貫施形態的模 式圖。 义 圖5是表示半導體裝置的製造方法之一實施形態的模 55 201246280 4〇873pif 式圖。 圖6是表示半導體裝置之一實施形態的模式斷面圖。 【主要元件符號說明】 1 :印刷版外框 2:網格印刷版内之被樹脂埋入之部分 3:網袼印刷版内之開口部 4 :刮板 6 7 9 接著劑 半導體晶圓 接著劑層/接著劑 階段化之接著劑層 框架 1〇 :切割膜 11:單片化之附接著劑層的接著劑半導體晶片 12 :切割刀 13a :第1段之半導體晶片 13b :第2段之半導體晶片 14 :支撐部件 15 :密封材料 16 ·將第1段之半導體^與支料件接合的接著劑 17 :將第2 合的接著劑層 段之半導體晶片與第i段之半導體晶片接 18:接合線 56The reaction liquid was obtained by stirring at 1 °C for 1 hour. The obtained reaction liquid was placed in vigorously stirred water, and the precipitate was separated by filtration, and dried under vacuum at 6 CTC for 48 hours to obtain a polyamino phthalate.醯imine resin. The molecular weight of the obtained polyamino phthalate ruthenium imide resin was measured by GPC 51 201246280 40873pif, and the weight average molecular weight (Mw) was 937 Å in terms of polyphenylene oxide, and the number average knife was used.畺(Μη) is 38800. Moreover, the obtained polyurethane imidate resin has a semi-solid shape at room temperature, and the glass transition temperature (Tg) is _40 C 〇 (adjusted by an adhesive) (liquid form) Next, 1) parts by mass of the above-mentioned polyurethane phthalimide resin: 50 parts by mass of YDCN700-7" (anthraquinone novolac type epoxy resin, manufactured by Dongdu Chemical Co., Ltd., trade name), "TrisP-PA" (4,4'-[l-[4-[l-(4-hydroxyphenyl)-丨-mercaptoethyl]phenyl]B_1:1_diyl], phenol, Manufactured under the name of Honshu Chemical Industry Co., Ltd., 5 enamel partitions and carbitol acetate (made by Wako Pure Chemical Co., Ltd.) 16 parts by mass was placed in a flask placed in an oil bath, and heated and stirred under a nitrogen atmosphere at 8 Torr to prepare a solution. To the obtained solution, "SO-C2" (cerium oxide filler, Adrnatechs) was added. 10.0 parts by mass and rTPPK" (manufactured by Co., Ltd., trade name), 0.2 parts by mass of tetraphenylboronic acid tetraphenyl sulphate, manufactured by Tokyo Chemical Industry Co., Ltd., and placed in a kneading machine for kneading. Further, the antifoaming kneading was carried out for 1 hour at 5 Torr or less. Next, 5.0 parts by mass of carbitol acetate was added as a solvent for printing, and the viscosity was adjusted by defoaming and kneading to obtain a viscosity of 26 Pa at a rotational speed of 0.5 rPm. s, liquid liquid adhesive 1 with a thixotropic index of 1.1 (liquid adhesive 2) 52 201246280 -TW / -/ ΜΑλ "YDCN700-7" 30 parts by mass and "Aronix m] 4" 40 parts by mass of (N_acryloyloxyethylhexa-phenylene f light amine, manufactured by Toagosei Co., Ltd., trade name) was placed in a flask set in an oil bath under a nitrogen atmosphere at 60 ° C Heating and stirring to dissolve it. Then, add "I_379EG" (2_(didecylamino)_2(4_methylbenzyl)-1-(4··Ν-morpholinylphenyl)butane_anthone, ciba in the flask.叩(10) Manufactured, trade name) 0.4 parts by mass, r1B2pz" (1_benzyl-2-phenylimidazole, manufactured by Shikoku Chemicals Co., Ltd., trade name) 〇 2 parts by mass, stirred, obtained at the number of revolutions A liquid adhesive 2 having a viscosity of 13 Pa·s at a rpm of 5 rpm and a thixotropic index of 1.0. (Formation of the adhesive layer) Example 1 to Example 4 MK_838SV printing machine (manufactured by MINAMI Co., Ltd.) equipped with a V-screen V50 grid printing plate (manufactured by NBC MESHTEC Co., Ltd.) was used to crystallize at 5 吋 ^ The back of the circle is dead, and the liquid adhesive or the liquid adhesive 2 is printed and coated on the periphery of the wafer (hereinafter also referred to as "end portion") without forming an adhesive layer. Shapes, respectively, to make a wafer with an adhesive layer. By visually confirming the tweezers of the adhesive after printing, as a result, there is no flying white or the like, and a uniform adhesive layer can be provided. Comparative Example 1 In the same manner as the formation of the adhesive layer of the example, a Mk_838sv printer equipped with a v_screen V50 grid printing plate was used for printing and coating to produce a wafer to which the film was attached. However, the position of the 11 wafers of the five-leaf φ is changed. 53 201246280 W8 / jpif The printing is performed so that the printing plate covers the entire surface of the wafer, and the adhesive is applied to the end of the wafer. (Evaluation of Uniformity of Adhesive Layer) Wafers of Example ~~Example 3 and the adhesive layer of Comparative Example 1 prepared as described above were heated in an oven at 8 μl for 4 hours using an oven to form an adhesive layer B. - Staged. Further, using a parallel exposure machine (manufactured by Luminas Co., Ltd., trade name "ML-210FM mask alignment exposure machine"), the wafer of the adhesive layer of Example 4 was subjected to 1000 mj/cm 2 under a nitrogen atmosphere. Exposure, B-staged the adhesive layer. The distance between the end of the crucible wafer and the end of the adhesive layer was measured using a non-contact film thickness meter (manufactured by Keyence Co., Ltd., nickname "KS-1100") for each wafer having the adhesive layer. The thickness of the layer of the agent and the ridge of the end of the layer of the adhesive layer. The ridge of the end is the height difference between the flat portion of the adhesive layer and the highest point of the raised portion. The results obtained are shown in Table 1. [Table 1] Unit Example 1 Example 2 Example λ Example 4 Comparative Example 1 Liquid adhesive The distance between the i* portion and the end of the adhesive layer was followed by the thick layer of the enamel layer mm 1 1 1 2 1 5 2 2 1 0 The end of the layer of the adhesive layer is raised at the end of the adhesive layer. f 隆 相对 相对 相对 相对 相对 相对 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 In the agent layer, the ratio of the end ridges to the thickness of the adhesive layer was greatly reduced as compared with the comparative example. From this, it was confirmed that the uniformity of the adhesive layer was maintained even at the end of the adhesive layer by forming the adhesive layer on the inner side of the peripheral portion of the semiconductor wafer. 54 201246280 HUO/jpu Round-layer laminate cutting = t The adhesion agent (4) prepared in the comparative example has an effect on the flatness, and can be used without problems. 4=== Not in the case of Example 2~Example 4. I Private until the brakes are private. To the cutting step. Compared with: a曰: two problems without any problem, the process of direct film filming, in /, in the chopped wafer, in the cutting 'L' in the outer edge of the Shixi wafer, a small crack, causing twinning In addition, when the cut-out stone wafer is observed, the wafer is mainly ejected in the peripheral portion of the wafer. [Industrial Applicability] According to the present invention, a semiconductor wafer having an adhesive layer in which an adhesive layer is formed on a semiconductor wafer with a uniform film thickness, and a semiconductor wafer using the adhesive layer can be provided. A method of manufacturing a semiconductor device and a semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor wafer with an adhesive layer. s Fig. 2 is a schematic view showing an embodiment of a method of manufacturing a semiconductor device. Fig. 3 is a schematic view showing an embodiment of a method of manufacturing a semiconductor device. Fig. 4 is a schematic view showing a consistent embodiment of a method of manufacturing a semiconductor device. Figure 5 is a diagram showing the modulo 55 201246280 4〇 873pif of an embodiment of a method of manufacturing a semiconductor device. Fig. 6 is a schematic cross-sectional view showing an embodiment of a semiconductor device. [Description of main component symbols] 1 : Printed frame 2: Part of the grid printed with resin embedded in the screen 3: Opening in the screen printing plate 4: Scraper 6 7 9 Adhesive semiconductor wafer adhesive Layer/adhesive staged adhesive layer frame 1〇: dicing film 11: singulated adhesive layer of the adhesive semiconductor wafer 12: dicing blade 13a: semiconductor wafer 13b of the first stage: semiconductor of the second stage Wafer 14: support member 15: sealing material 16 - an adhesive 17 for bonding the semiconductor of the first stage to the support member: the semiconductor wafer of the second bonding layer layer is connected to the semiconductor wafer of the i-th segment 18: Bonding wire 56

Claims (1)

201246280. HUO / jpil 七、申請專利範圍: 的半導體晶圓,其包含: 其:-個面上的接著劑層, 侧。 日v ;斤述半導體晶圓之周緣部之更内 2. 如申請專利範圍第i項所 晶圓,其中所述接著劑層包含於斤劑層的半導體 著劑。 L 35c下為液狀之接 3. 、了種半導體裝置的製造方法,. 於半導體晶圓之其中一個而 3 包含接著劑之接著劑層的步驟;之更_ ’形成 將所述接著劑層B·階段化的步驟。 法,直中3項所述之半導體裝置的製造方 法中所述接#劑層利用網版印刷法、喷 塗法或間隙塗佈法而形成。 、土 4 5.如申請專利範圍第3項或第4項所述之半導體裝置 其可藉由如申請專利範圍第3項 至第5項中任1所狀半導體裝置的製造方法而製造。 57201246280. HUO / jpil VII. Patent application scope: A semiconductor wafer comprising: - an adhesive layer on one side, side. Day v; the inner periphery of the semiconductor wafer. 2. The wafer of claim i, wherein the adhesive layer is included in the semiconductor layer of the pounding layer. L 35c is a liquid connection 3. A method of manufacturing a semiconductor device, one of a semiconductor wafer and 3 a step of including an adhesive layer of an adhesive; further forming a layer of the adhesive layer B. Steps of phased. The method of manufacturing a semiconductor device according to the above-mentioned third aspect is formed by a screen printing method, a spray coating method or a gap coating method. The semiconductor device according to the third aspect or the fourth aspect of the invention is manufactured by the method of manufacturing a semiconductor device according to any one of claims 3 to 5. 57
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US20210088903A1 (en) * 2019-01-23 2021-03-25 Microcosm Technology Co., Ltd. Photosensitive polyimide resin composition and polyimide film thereof

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KR101650639B1 (en) * 2011-12-05 2016-08-23 다이니폰 인사츠 가부시키가이샤 Sealing material sheet for solar cell modules
JP6106405B2 (en) * 2012-10-31 2017-03-29 ナミックス株式会社 Semiconductor device
US9230888B2 (en) 2013-02-11 2016-01-05 Henkel IP & Holding GmbH Wafer back side coating as dicing tape adhesive
KR102281541B1 (en) * 2015-03-24 2021-07-26 도레이 카부시키가이샤 photosensitive resin composition

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JP2005116566A (en) * 2003-10-02 2005-04-28 Sumitomo Bakelite Co Ltd Adhesive for fixing semiconductor element, method of supplying adhesive to semiconductor element, semiconductor device and its manufacturing method
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