TW201239119A - Evaporation apparatus - Google Patents

Evaporation apparatus Download PDF

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Publication number
TW201239119A
TW201239119A TW100109732A TW100109732A TW201239119A TW 201239119 A TW201239119 A TW 201239119A TW 100109732 A TW100109732 A TW 100109732A TW 100109732 A TW100109732 A TW 100109732A TW 201239119 A TW201239119 A TW 201239119A
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TW
Taiwan
Prior art keywords
movable
substrate
mask
evaporation
source
Prior art date
Application number
TW100109732A
Other languages
Chinese (zh)
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TWI486470B (en
Inventor
Chin-Chih Lin
Lun Tsai
Chia-Yu Chen
Wen-Hao Wu
Original Assignee
Au Optronics Corp
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Publication date
Application filed by Au Optronics Corp filed Critical Au Optronics Corp
Priority to TW100109732A priority Critical patent/TWI486470B/en
Priority to CN2011101309610A priority patent/CN102212785A/en
Priority to KR1020110064701A priority patent/KR20120107826A/en
Publication of TW201239119A publication Critical patent/TW201239119A/en
Application granted granted Critical
Publication of TWI486470B publication Critical patent/TWI486470B/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material

Abstract

An evaporation apparatus including a substrate vehicle, at least one movable evaporation source and at least one movable mask. A substrate is carried by the substrate vehicle. The movable evaporation source is disposed under the substrate. On the substrate, an evaporation range of the movable evaporation source is smaller than a dimension of the substrate. The movable mask is disposed between the substrate and the movable evaporation source, wherein the movable mask has a patterned aperture, and a coverage of the movable mask is greater than or substantially equal to the evaporation range of the movable evaporation source.

Description

υ/ 37111twf.doc/I 201239119 六、發明說明: 【發明所屬之技術領域】 種 本發明是有關於-種蒸鑛設備,且 能夠在大尺寸基板上進料麟積之㈣設^有關; 【先前技術】 近來環保意識抬頭,具有低消耗功 佳、無輕射、高晝質等優越特性的平=間利用效率 mi 農置包括液晶顯示裝置、電㈣ 其是一種自發光型的顯示裝置機 杈組’故可省去背光模組的製造成本以及背; 消耗的能源。此外,由於有機電激發_示裝置無= 匕、高應答速度等特性,故有機電峨 置二、襄置已减為-種兼具性能及環軸念的平面顯示裝 -般來說,有機電激發光顯示裝置 =有機電激發光層、陰極等膜層製作於基板=括= 2術而言’有機電激發光層與陰極多採科—遮罩搭配 :·,、鍍的方歧行製作’輯㈣的鱗之尺寸通常需麟 ί之尺寸相當。由於基板持續朝著大尺寸的方向發展, 热鍍製程所需使用到的遮罩之尺寸亦隨之增加,然而,大 =寸的遮罩在製作上十分困難,造成製作成本的負擔。此 ’大尺寸遮罩容胃有結構強度不足、目重力侧而下垂υ / 37111twf.doc/I 201239119 VI. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a type of steaming equipment, and is capable of feeding on a large-sized substrate (4); Prior Art] Recently, environmental awareness has risen, and it has the advantages of low consumption, good lightness, high enamel and other superior characteristics. The use efficiency is high. The agricultural device includes a liquid crystal display device and electricity (4). It is a self-illuminating display device. The group "can save the manufacturing cost of the backlight module as well as the back; energy consumed. In addition, due to the characteristics of the organic electro-excitation device, such as no 匕, high response speed, etc., the organic electric device has been reduced to a flat display device with both performance and ring axis. Electromechanical excitation light display device = organic electroluminescence excitation layer, cathode and other film layers are fabricated on the substrate = including = 2] 'organic electro-excitation layer and cathode multi-collection - mask matching: ·, plated square production" The size of the scale of the series (4) usually needs to be the same size. As the substrate continues to move toward a large size, the size of the mask required for the hot-dip process is also increased. However, a large-size mask is difficult to fabricate, resulting in a manufacturing cost burden. This large size mask has insufficient structural strength, and the side of the gravity is drooping.

201239119 37111twf.doc/I 等問題,因此,如何為 此領域研發的重點之一。尺寸基板上進行蒸鍍製程,實為 【發明内容】 行薄提供1驗設備,其㈣在大尺寸基板上進 -可鍍設備,其包括-基板載具、至少 載—基板,可—可移動遮罩。基板載具適於承 在基板上的蒸鍍範圍小;方了土可移動蒸鍍源 開孔,且可移動ίΐίΐ’其中可移動遮罩具有一圖案化 在基板上的蒸鍍=。、遮蔽範圍大於或等於可移動蒸鐘源 少一 種蒸鑛設備’其包括-基板載具、至 板,而可及多麵罩。基板載具適於承載一基 板上二可移動蒸錄源在基 源與基板之間,1中°遮罩配置於可移動蒸錢 的遮辭餘图I /、中各遮罩具有一圖案化開孔,且各遮罩 圍。’、、 於或等於可移動蒸鑛源在基板上的蒸鍍範 利用與移動f鑛源與可移動遮罩的搭配,或者 區域上分別谁=源與多個遮罩的搭配’以於基板的不同 無須斑A板相二纽’由於可移動遮罩與各個遮罩的尺寸 遮罩的i作困i度因此本發明可以有效降低可移動遮罩與 4201239119 37111twf.doc/I and other issues, therefore, how to develop one of the focuses of this field. The vapor deposition process is performed on the size substrate, which is actually [inspective content]. The device is provided with a thin gauge, and (4) a plate-plating device is provided on a large-sized substrate, which includes a substrate carrier, at least a carrier substrate, and can be moved. Mask. The substrate carrier is adapted to have a small vapor deposition range on the substrate; the earthmoving vapor deposition source is apertured and movable, wherein the movable mask has a patterning evaporation on the substrate. The shielding range is greater than or equal to the movable steam source. One less steaming equipment' includes a substrate carrier, a plate, and a multi-mask. The substrate carrier is adapted to carry a movable movable recording source on a substrate between the base source and the substrate, and the 1°° mask is disposed in the movable surface of the movable steaming I /, and each of the masks has a pattern Open the hole and surround each mask. ',, or equal to the vapor deposition range of the movable vapor source on the substrate, and the combination of the moving f source and the movable mask, or the area of the source and the plurality of masks respectively The difference is that the A-plate phase II is not required because the movable mask is different from the size mask of each mask, so the present invention can effectively reduce the movable mask and the 4

。’ 37111tw£docJ 201239119 為讓本發明之上述和其他目的、特徵和優點能更明顯 易I"蓳’下文特舉較佳實施例,並配合所附圖式,作詳細說 明如下。 【實施方式】 【第一貫施例】 ^ 圖至圖1D為本發明第一實施例之蒸鍍設備的示 意圖」而圖2為本發明第一實施例之蒸鍍設備的側視示意 圖。請參照圖1A與圖2,本實施例之蒸鍍設備1〇〇包括一 基板载具110、一可移動蒸鍍源12〇以及一可移動遮罩 13〇。基板載具110適於承載一基板SUB,可移動蒸鍍源 120位於基板SUB下方,且可移動蒸鍍源12〇在基板 上的錄範圍A2小於基板§UB的尺寸。可移動遮罩13〇 配置於可移動蒸鍍源12G與基板SUB之間,其中可移動遮 具有一圖案化開孔130a,且可移動遮罩130的遮蔽 A1大於或等於可移動蒸鍍源120在基板SUB上的蒸 A2。值知注意的是,遮蔽範圍A1的形狀與蒸鑛範 A2皆為相圍似’舉例而言,遮蔽範圍A1與蒸鍍範圍 列之施例中,基板遍上可區分為多個呈陣列排 區=HA3’而可移動遮罩13G具有—對應於各個鑛膜 i°3〇cn/^ 13%卩及—環财效區13Gb的周邊區 範ϋ A1 :彳^ 外f定義出可移動遮罩130的遮蔽 A3##tL 了π邊侍知,基板SUB上的各個鍍膜區 係彼此絲,但抑此為限。财之,各健膜區A3. The above and other objects, features, and advantages of the present invention will be made apparent by the appended claims. [Embodiment] [First Embodiment] Fig. 1D is a schematic view of a vapor deposition apparatus according to a first embodiment of the present invention. Fig. 2 is a side elevational view showing the vapor deposition apparatus of the first embodiment of the present invention. Referring to FIG. 1A and FIG. 2, the vapor deposition apparatus 1 of the present embodiment includes a substrate carrier 110, a movable vapor deposition source 12A, and a movable mask 13A. The substrate carrier 110 is adapted to carry a substrate SUB, and the movable evaporation source 120 is located below the substrate SUB, and the recording range A2 of the movable evaporation source 12 on the substrate is smaller than the size of the substrate UB. The movable mask 13 is disposed between the movable vapor deposition source 12G and the substrate SUB, wherein the movable cover has a patterned opening 130a, and the shielding A1 of the movable mask 130 is greater than or equal to the movable evaporation source 120. Steam A2 on the substrate SUB. It should be noted that the shape of the shielding range A1 is the same as that of the vaporizing range A2. For example, in the example of the shielding range A1 and the evaporation range, the substrate can be divided into a plurality of array rows. The area = HA3' and the movable mask 13G has - corresponding to each mineral film i°3〇cn/^ 13%卩 and the surrounding area of the 13Gb of the ring-effect area A1: 彳^ The outer f defines a movable cover The mask A3##tL of the cover 130 is π-side, and the respective coating areas on the substrate SUB are mutually wired, but this is not limited thereto. Finance, each membrane area A3

201239119 1 37111twf.doc/I 亦可彼此相鄰(未繪示),可移動蒸鍍源12〇的數量與可移 動遮罩130的數量相同,而鍍膜區A3的數量則大衣;可移 動,罩no的數量。在本實施例中,鍍膜區Α3的數量例 如是6個,而可移動蒸鍍源12〇的數量與可移動遮罩 的數量例如皆為1個,但不以此為限。 -為了使基板SUB上所有的鑛膜區Α3的蒸鍍順利進 行’可移動級源m與可移動遮罩需於基板咖下 方同步移動。詳言之,可移動蒸鍍源12G會沿著移動路徑 P1移動多次並且依序停留在各個鍍顧A3下方,而 動遮罩13G會沿著移動雜P2移動多次並且 各健膜區A3下方,且可移動遮罩13〇始終維持在可^ 動蒸鍍源m上方以利驗线行。換言之,每當可移動 蒸鐘源12〇與可移動遮罩130移動至一個鑛膜區A3之下 方時,可移動蒸錢源120與可移動遮罩13〇會暫時 動,1對此鑛膜區A3進行蒸鑛。在某個鍍膜d A3完成蒸 鑛之後,可移動蒸_ 120與可移動遮罩13 = 移動路徑P2再次移動至下-個鑛膜區5 的下方,並對下一個鍍膜區A3進行蒸铲。 S二=基板卿上的不,:膜區A3不會在同 鍍’而是在多個時間點分別進行蒸鑛,因 此可移動減源m射軸麵13 須 SUB的尺寸相當。舉例而言’ J二肩/、暴扳 與各:艘膜區―相當了 實需 施射所使_可軸絲㉟12 0 寸可以小於基板SUB的尺寸,因此130之尺 J八丁囚此本實施例不會面臨習知 6201239119 1 37111twf.doc/I may also be adjacent to each other (not shown), the number of movable vapor deposition sources 12〇 is the same as the number of movable masks 130, and the number of coating areas A3 is coat; movable, cover The number of no. In the present embodiment, the number of the coating regions Α3 is, for example, six, and the number of the movable vapor deposition sources 12〇 and the number of the movable masks are, for example, one, but not limited thereto. - In order to smoothly evaporate all the film areas Α3 on the substrate SUB, the movable stage source m and the movable mask need to move synchronously under the substrate. In detail, the movable vapor deposition source 12G moves a plurality of times along the movement path P1 and sequentially stays under each of the plating sheets A3, and the movable mask 13G moves along the movement miscellaneous P2 a plurality of times and each of the membrane areas A3 Below, and the movable mask 13〇 is always maintained above the vaporizable source m for line inspection. In other words, whenever the movable steam source 12〇 and the movable mask 130 move below a mining membrane area A3, the movable money source 120 and the movable mask 13〇 are temporarily moved, 1 Zone A3 is steamed. After the evaporation of a certain coating d A3 is completed, the movable steaming _ 120 and the movable mask 13 = the moving path P2 are moved again below the lower - film area 5, and the next coating area A3 is steamed. S==No on the substrate, the film area A3 is not in the same plating but is steamed at a plurality of time points, so the size of the movable reduction source m-axis surface 13 must be equal. For example, 'J shoulders, violently and each: the membrane area ― is quite a real need to apply _ can be a shaft wire 3512 0 inch can be smaller than the size of the substrate SUB, so 130 feet J eight prisoner this implementation The case does not face the conventional 6

07 37111twf.d〇c/I 201239119 到的問題(如結構強度不足、因重力作 ^ 120 步移動。 (P2)於基板_下方同 ’本發明並不限定可移動蒸鍍源120與可移動讲 ί須為u形路#,此領域具有通常知i …:《多動療錢源、120與 二 修改為迁迴形路經(P3、P4),如圖1B所示的移動路搜 亦參照圖1C與圖1D,本實施例之蒸鑛設備100 罩·;===源、120以及多個可移動遮 的數量相同。 讀須與可移動遮罩⑽ 罩:二;Γ多動蒸鍍源120的數量與可移動遮 ΐ=ΠΓ 徑(P5、P5,、P6、P6,)== 與可移動遮罩13G的數量皆為2個, $ 與可移動遮罩m係沿著—L形路徑(P7 =基板SUB下方同步移動。值得注意的是,前述之 if t 發明,此領域具有通常知識者可根 f基板SUB的尺寸以及其他的設計需求,適度地更動可 動蒸鍍源120與可移動遮罩13〇的移動路徑。 當選用多個可義縫源12G以及多個可移動遮罩07 37111twf.d〇c/I 201239119 The problem (such as insufficient structural strength, gravity movement by 120 steps. (P2) on the substrate _ below the same 'the present invention does not limit the movable evaporation source 120 and the movable speaker ί有为u形路#, this field has the usual knowledge i ...: "Multi-dynamic therapy money source, 120 and two modified to move back shape path (P3, P4), as shown in Figure 1B 1C and FIG. 1D, the steaming apparatus 100 of the present embodiment has the same number of covers, the source=120, and the plurality of movable covers. The read and the movable cover (10) cover: two; The number of the source 120 and the movable concealer = diameter (P5, P5, P6, P6,) == and the number of movable masks 13G are both two, and the movable mask m is along the line -L Shape path (P7 = synchronous movement under the substrate SUB. It is worth noting that the aforementioned if t invention, the field has the general knowledge of the size of the substrate SUB and other design requirements, moderately change the movable evaporation source 120 and The moving path of the movable mask 13〇. When multiple splicing sources 12G and multiple movable masks are selected

201239119 , 37111twf.doc/I 13〇對基板SUB上的鍍膜區A3進行蒸鍍時,可以縮短蒸 鍍製程所需的時間,進而提昇產能(throughput)。 【第二實施例】 圖3A至圖3B為本發明第二實施例之蒸鍍設備的示意 圖’而圖4為本發明第二實施例之蒸鍍設備的側視示意 圖。請參照圖3A與圖4,本實施例之蒸鍍設備100,包括 一基板載具110、至少一可移動蒸鍍源120以及多個遮罩 13〇’。基板載具110適於承載一基板SUB,而可移動蒸鍍 源120位於基板SUB下方,且可移動蒸鍍源120在基板 SUB上的蒸鍍範圍A2小於基板SUB的尺寸。遮罩130, 配置於可移動蒸鍍源120與基板SUB之間,其中各遮罩 130’具有一圖案化開孔13〇a,且各遮罩13〇,的遮蔽範圍 A1大於或等於可移動蒸鍍源120在基板SUB上的蒸鍍範 圍A2。值得注意的是,遮蔽範圍A1的形狀與蒸鍍範圍 A2的形狀相似,舉例而言,遮蔽範圍A1與蒸鍍範圍八2 皆為矩形範圍。 在本實施例中,基板SUB上可區分為多個呈陣列排 列之鑛膜區A3’而各個鮮13〇,分職有—對應於各個 ,膜區A3之有效區13Qb以及—環繞有效區13Qb的周邊 區130c ’且周邊區13〇b的外緣定義出各個遮罩⑽,的遮 ,範圍A卜從圖4可清楚得知,基板SUB上的各個鍵膜 品A3係彼此》離,但不以此為限。換言之,各個鐘膜區 A3亦可彼此相鄰(未繪示),可移動蒸鑛源12〇的數量少於 遮罩130,的數量’而鍍膜區A3的數制與料13〇,的數 8 201239119201239119, 37111twf.doc/I 13〇 When the deposition area A3 on the substrate SUB is vapor-deposited, the time required for the evaporation process can be shortened, and the throughput can be improved. [Second Embodiment] Figs. 3A to 3B are schematic views of a vapor deposition apparatus according to a second embodiment of the present invention, and Fig. 4 is a side elevational view showing the vapor deposition apparatus of the second embodiment of the present invention. Referring to FIG. 3A and FIG. 4, the vapor deposition apparatus 100 of the present embodiment includes a substrate carrier 110, at least one movable evaporation source 120, and a plurality of masks 13'. The substrate carrier 110 is adapted to carry a substrate SUB, and the movable evaporation source 120 is located below the substrate SUB, and the evaporation range A2 of the movable evaporation source 120 on the substrate SUB is smaller than the size of the substrate SUB. The mask 130 is disposed between the movable evaporation source 120 and the substrate SUB, wherein each of the masks 130 ′ has a patterned opening 13 〇 a, and each of the masks 13 〇 has a shielding range A1 greater than or equal to the movable The vapor deposition source 120 has a vapor deposition range A2 on the substrate SUB. It is to be noted that the shape of the shielding range A1 is similar to the shape of the evaporation range A2. For example, the shielding range A1 and the evaporation range VIII are both rectangular ranges. In this embodiment, the substrate SUB can be divided into a plurality of arrays of mineral film areas A3 ′ arranged in an array, each of which is 13 〇, corresponding to each, the effective area 13Qb of the membrane area A3 and the surrounding effective area 13Qb The peripheral area 130c' and the outer edge of the peripheral area 13〇b define the respective masks (10), and the extent Ab can be clearly seen from FIG. 4, and the respective key film products A3 on the substrate SUB are separated from each other, but Not limited to this. In other words, each of the bell-shaped regions A3 may also be adjacent to each other (not shown), the number of movable distilled mineral sources 12〇 is less than the number of the masks 130, and the number of the coating regions A3 is equal to the number of the materials 13〇. 8 201239119

一.....U7 37llltwf.doc/I 量相同。在本實施例中’可移動蒸鍍源12〇的數量例如為 1個,而鍍膜區A3與遮罩130,的數量例如皆為6個。 為了使基板SUB上所有的鍵膜區A3的蒸錢順利進 行,可移動蒸鍍源120需於基板SUB下方移動。詳言之, 可移動蒸鍍源120會沿著移動路徑P9移動多次並且依序 停留在各個鍍膜區A3 (即不同遮罩no,)的下方以利蒸 鍍之進行。換言之,每當可移動蒸鍍源12〇移動至一個& 膜區A3之下方時,可移動蒸鍍源12〇會暫時停止移動, 並對此鍍膜區A3進行蒸鍍。在某個鍍膜區A3完成蒸鍍之 後,可移動蒸鍍源120會沿著移動路徑P9再次移&丄下 一個鍍膜區A3的下方,並對下一個鍍膜區A3進行蒸鍍。 承上述,由於基板SUB上的不同鍍膜區A3不會在 -時間點進行蒸鍍,而是在多個時間點分別進行基穿,因 此可移動蒸鍍源丨2〇與鱗13G,的尺寸無須與基板測 的尺寸相當。舉例而言,可移動蒸_ 12G與遮罩η 尺寸僅需與各個鍍膜區A3的面積相當(相等或略。 由於本實施例中所使用的可移動蒸_12〇與遮罩13 尺寸可以j於基板SUB的尺寸,因此本實施例不會面 知大尺寸料所遭财的_ (如、轉隸 作用而下垂等問題)。 里刀One.....U7 37llltwf.doc/I is the same amount. In the present embodiment, the number of the movable vapor deposition sources 12 is, for example, one, and the number of the coating regions A3 and the masks 130 is, for example, six. In order to smoothly carry out the evaporation of all the bond film areas A3 on the substrate SUB, the movable vapor deposition source 120 needs to move under the substrate SUB. In detail, the movable vapor deposition source 120 is moved a plurality of times along the movement path P9 and sequentially stays under the respective coating areas A3 (i.e., different masks no) to facilitate the evaporation. In other words, each time the movable vapor deposition source 12 is moved below a & membrane region A3, the movable vapor deposition source 12A temporarily stops moving, and the coating region A3 is vapor-deposited. After the vapor deposition is completed in a certain coating zone A3, the movable vapor deposition source 120 is again moved along the movement path P9 below the next coating zone A3, and the next coating zone A3 is vapor-deposited. In view of the above, since the different coating regions A3 on the substrate SUB are not vapor-deposited at the time point, but are separately worn at a plurality of time points, the size of the vapor deposition source 丨2〇 and the scale 13G can be moved without It is equivalent to the size measured by the substrate. For example, the movable steam _ 12G and the mask η size only need to be equal to or equal to the area of each coating area A3. Since the movable steam _12 〇 and the mask 13 size used in the embodiment can be Because of the size of the substrate SUB, the present embodiment does not know the problem of large-size materials (such as the problem of drooping and the like).

從圖3A可清楚得知,可移動蒸錢源12〇係 形路徑P9於基板SUB下方移動。 者 U ==發明並不限定可移動蒸鍍源i2〇嶋 必須為U祕徑,此領域具有通 鍍源120的移動路徑修改為 W力'移動蒸 文為迂迴形路徑(Ρ10),如圖3ΒAs is clear from Fig. 3A, the movable vapor source 12-turned path P9 moves below the substrate SUB. U == invention does not limit the movable vapor deposition source i2 〇嶋 must be U secret path, the movement path of the plated source 120 in this field is modified to W force 'moving steamed text is the 迂-shaped path (Ρ 10), as shown 3Β

201239119; 37111twf.doc/I 201239119; 37111twf.doc/I 所示 圖3A與圖3B t所揭露的實 鐘源m,然而,本實施例並不限定戶:=广可移動蒸 :原12〇的數量。舉例而言,可移動蒸鍍源蒸鍍 個(例如2個或更多個)。當選 ^量為多 =及多個遮罩_基板SUB上的鑛膜 時,可以縮紐蒸錢製程所需的時間,進而提昇產能。丁續 ^發剩料軸紐減可軸料的搭配 蒸链源與多個遮罩的搭配,以於基板的不同 :域上仃驗,由於可移動鮮與各個遮罩的 二須與基板相當,因此本發明可以有效降低可移動遮罩與 遮罩的製作困難度。 〃 雖然本發明已以較佳實施例揭露如上,然其並非用以 限定本發明,任何熟習此技藝者,在不脫離本發明之精神 ^範圍内’當可作些許之更動與潤飾,因此本發明之保護 圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1A至圖1D為本發明第一實施例之蒸鍍設備的示 意圖。 圖2為本發明第一實施例之蒸鍍設備的側視示意圖。 圖3A至圖3B為本發明第二實施例之蒸鍍設備的示意 圖。 圖4為本發明第二實施例之蒸鍍設備的側視示意圖。201239119; 37111twf.doc/I 201239119; 37111twf.doc/I The real clock source m disclosed in FIG. 3A and FIG. 3B t is shown, however, this embodiment does not limit the household: = wide movable steaming: original 12 inch Quantity. For example, the movable evaporation source is vapor deposited (e.g., two or more). When the amount of the selection is more than = and the mineral film on the plurality of masks_substrate SUB, the time required for the steaming process can be reduced, thereby increasing the production capacity. Ding continued to send the remaining material shaft to reduce the axial material of the combination of the steam source and the multiple masks, in order to different the substrate: the field test, because the movable fresh and the two masks of each mask are equivalent to the substrate Therefore, the present invention can effectively reduce the difficulty in manufacturing the movable mask and the mask. Although the present invention has been described above by way of a preferred embodiment, it is not intended to limit the invention, and it is to be understood that those skilled in the art can make some modifications and refinements without departing from the spirit of the invention. The protection of the invention is defined by the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A to Fig. 1D are schematic views of an evaporation apparatus according to a first embodiment of the present invention. Fig. 2 is a side elevational view showing the vapor deposition apparatus of the first embodiment of the present invention. 3A to 3B are schematic views of a vapor deposition apparatus according to a second embodiment of the present invention. Fig. 4 is a side elevational view showing the vapor deposition apparatus of the second embodiment of the present invention.

201239119υ/ 37111twf.doc/I 【主要元件符號說明】 100、100’ :蒸鍍設備 110 :基板載具 120 :可移動蒸鍍源 130 :可移動遮罩 130’ :遮罩 130a :圖案化開口 13 Ob ·有效區 130c :周邊區 SUB :基板 A1 :遮蔽範圍 A2 :蒸鍍範圍 A3 :鍍膜區 P1〜P10 :移動路徑 11201239119υ/ 37111twf.doc/I [Description of main component symbols] 100, 100': evaporation apparatus 110: substrate carrier 120: movable evaporation source 130: movable mask 130': mask 130a: patterned opening 13 Ob · effective area 130c : peripheral area SUB : substrate A1 : shielding range A2 : evaporation range A3 : coating area P1 to P10 : moving path 11

Claims (1)

37111twf.doc/I 201239119 v 7 七 申請專利範圍 1.一種蒸鍍設備,包括: 一基板載具,適於承載一基板; 至少一可移動蒸鍍源,位於該基板下方,該可移動蒸 鍍源在該基板上的蒸鑛範圍小於該基板的尺寸;以及 至少-可移動遮罩,配置於該可移動蒸鍍源與該基板 之間,其中該可移動遮罩具有一圖案化開孔,且該可移動 遮罩的-遮蔽範圍大於或等於該可移動蒸鍍源在該基板上 的蒸鍍範圍。 2·如申請專利範圍第1項所述之蒸鍍設備,其中該可 移動蒸鍍源的數量與該可移動遮罩的數量相同,且該可移 動蒸鍍源與該可移動遮罩係於該基板下方同步移動。 3.如申凊專利範圍第2項所述之蒸鍍設備,其中該可 ,蒸賴倾可軸鮮m-u形路徑於該 方同步移動。 4·如申請專·_ 2項所述之驗設備,其中該可 =動秦賴触可錢鮮娜雜於 下方同步移動。 5.如+請專纖㈣2销狀聽設備,其中該可 移動蒸鑛源的數量與該可移動遮罩的數量皆為多個。 in 利範_第1項所述之蒸賴備’其中該基 呈陣列排列之鍍膜區,而該可移動遮罩具有 區,且談周二之一有效區以及一環繞該有效區的周邊 00 U σ品、外緣定義出該可移動遮罩的該遮蔽範圍。 如》月專利範圍第6項所述之蒸鍍設備,其中該可 12 37111twf.doc/I 2〇1239119 移動蒸鍍源與該可移動 間,以於各該鑛膜區上分別進移動於該些鍵膜區之 8.一種蒸鍍設備,包括:…又 一基板載具,適於承載一 至少-可移動蒸錢源,位二 ==链範圍小於寸=動蒸 中各令逆罩呈纟^於5亥可移*魏源與該基板之間,JL ==:=該遮罩的-遮“ 9·如申請專利基板上的蒸鑛範圍。 移動蒸賴缝4少於麵祕設備’其中該可 移動=以=項:述之蒸鐘設備,其中該可 11如申靖專利!= 該些遮罩下方移動。 ㈣項所述之紐設備,其中” 杯卜夕申專利範圍第8項所述之蒸錢設備,其中兮其 膜區之有效區以及—環繞該有效區J周^對 且该周邊區的外緣定義出各該遮罩的該範H。扣’ 4.如申請專利範㈣13項所述之蒸鍵設備,复中1 些锻膜區的數量與該些遮罩的數量相同,而該可移動=亥 =移動於該錄継之間,以於各該鍍麟上分別= 1337111twf.doc/I 201239119 v 7 VII Patent Application Area 1. An evaporation apparatus comprising: a substrate carrier adapted to carry a substrate; at least one movable evaporation source under the substrate, the movable evaporation The evaporation zone on the substrate is smaller than the size of the substrate; and at least a movable mask disposed between the movable evaporation source and the substrate, wherein the movable mask has a patterned opening, And the shielding range of the movable mask is greater than or equal to the evaporation range of the movable evaporation source on the substrate. 2. The vapor deposition apparatus of claim 1, wherein the number of the movable vapor deposition source is the same as the number of the movable mask, and the movable vapor deposition source and the movable mask are tied to The substrate moves synchronously below. 3. The vapor deposition apparatus according to claim 2, wherein the vaporizable subliminal m-u-shaped path moves synchronously on the side. 4. If you apply for the equipment described in the special _ 2 items, the one that can be moved by Qin Qin Lai can be mixed with the following. 5. For example, please use the special fiber (4) 2 pin-shaped listening device, wherein the number of the movable steam source and the number of the movable mask are multiple. In the first embodiment of the present invention, the movable mask has an area, and the movable mask has an area, and one of the active areas on Tuesday and a periphery around the effective area 00 U σ The outer edge defines the masking range of the movable mask. The vapor deposition apparatus of the sixth aspect of the invention, wherein the movable evaporation source and the movable compartment are respectively movable on the each membrane area 8. The evaporation film device comprises: an evaporation device comprising: ... another substrate carrier adapted to carry an at least-movable steam source, the bit 2 == the chain range is less than the inch = the steaming is performed in each of the masks纟^在五亥 可移* Weiyuan and the substrate, JL ==:= The mask-covering "9·If the steaming range on the patented substrate. Moving the steaming seam 4 is less than the surface secret equipment' Wherein the movable = to = item: the steaming device described, wherein the 11 can be like the Shenjing patent! = the moving under the mask. (4) The equipment described in the item, wherein the cup is the patent scope of the 8th The money-selling apparatus of the item, wherein the effective area of the membrane region and the circumference of the circumference of the effective area are defined by the outer circumference of the effective area J and the outer edge of the peripheral area defines the vane H of each of the masks. Buckle' 4. As claimed in the patent application (4), the steam-bonding device, the number of forging zones in the complex is the same as the number of the masks, and the movable = Hai = moving between the recordings, For each of the platings, respectively = 13
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