201238074 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種發光二極體裝置，尤其是關於一種 具有高出光效率的覆晶發光二極體陣列裝置結構。 【先前技術】 發光二極體（LED)之發光原理和結構與傳統光源並不 相同，具有耗電量低、元件壽命長、無須暖燈時間、反應 速度快等優點，再加上其體積小、财震動、適合量產，容 易配合應用需求製成極小或陣列式的元件，在市場上的應 用頗為廣泛。例如，光學顯示裝置、雷射二極體、交通號 誌、資料儲存裝置、通訊裝置、照明裝置、以及醫療裝置 等。 傳統的陣列式發光二極體1，如第1圖所示，包含一 絕緣基板10、複數個發光二極體單元12形成於絕緣基板 10上，包含一 p型半導體層121、一發光層122、以及一 η 型半導體層123。由於基板10不導電，因此於複數個發光 二極體單元12之間由蝕刻形成溝渠14後可使各發光二極 體單元12彼此絕緣，另外再藉由部分蝕刻複數個發光二極 體單元12至η型半導體層123，分別於η型半導體層123 暴露區域以及ρ型半導體層121上形成一第一電極18以及 一第二電極16。再藉由金屬導線19選擇性連接複數個發 光二極體單元12之第一電極18及第二電極16，使得複數 201238074 個發光二極體單元12之間形成串聯或並聯之電路。 然而，藉由金屬導線19進行發光二極體單元12間的 電路連結時，由於發光二極體單元12與之間的溝渠14高 低差距頗大，在形成金屬導線19時容易產生導線連結不良 或斷線的問題，進而影響元件的良率。 為解決上述問題，發光二極體單元可進一步結合—承 載基板（次載體，sub-mount)，以覆晶的方式形成一發光裳 置。所述發光裝置包含一具有至少一導電連結結構（電路) 之承載基板；至少一焊料(solder)位於上述承載基板上，藉 由此焊料將上述發光二極體固定於承載基板上，再以導電 連結結構（電路）電性連接發光二極體之電極墊；其中，上 述之承載基板可以是導線架（lead frame)或大尺寸鑲嵌基板 (mounting substrate) ’以方便發光裝置之電路規劃並提高其 散熱效果。 【發明内容】 本發明提供一種發光二極體農置，尤其是關於一種具 有间出光效率的覆晶發光二極體陣列裝置結構。 本發㈣實施例提供一種發光二極體裝置，包含一 承載基板，具有-第_表面與—相對於第—表面的一第二 表面第-發光二極體陣列’具有複數第—發光二極體 單元，以覆晶方式設置於第_表面上；—第二發光二極體 陣列，具有複數第二發光二極體單元，以覆晶方式設置於 201238074 第二表面上；其中，至少一第一導電連結結構，設置於第 一表面上；以及，至少一第二導電連結結構，設置於第二 表面上；其中，至少兩個第一發光二極體單元與第一導電 連結結構接合形成電性連結，至少兩個第二發光二極體單 元與第二導電連結結構接合形成電性連結。 本發明的另一實施例提供一種發光二極體裝置，包含 一承載基板，具有一第一表面；一第一發光二極體陣列， 具有複數第一發光二極體單元，以覆晶方式設置於第一表 面上；一第一成長基板，具有一第二表面，第一發光二極 體陣列係形成於第二表面上；以及一第一導電連結結構， 設置於第一表面上，至少兩個第一發光二極體單元透過與 第一導電連結結構接合形成電性連結；其中，第一表面與 第二表面係粗化之表面。 【實施方式】 以下配合圖式說明本發明之各實施例。首先，如第2 圖所示，本發明之第一實施例提供一種具有雙面覆晶結構 的發光二極體裝置2。發光二極體裝置2具有一承載基板 27，承載基板27具有第一表面271與第二表面272，其中 第一表面271與第二表面272相對。承載基板並不限定為 單一基板，亦可以是由複數基板或複數不同材料組合而成 的複合式承載基板。例如：承載基板27可以包含兩個相互 接合的第一承載基板與第二承載基板（圖未示），分別承載 201238074 第一發光二極體單元23與第二發光二極體單元23’。為了 增加發光裝置整體的發光效率，第一表面271與第二表面 272上可以分別選擇性地形成反射結構251或252，例如可 以為金屬反射層或分布式布拉格反射層（DBR，distributed Bragg reflector)等；或者，第一表面271與第二表面272 也可以分別選擇性地形成粗化的表面。形成粗化結構的方 式例如可以為濕式蝕刻、電化學蝕刻、離子束轟擊等方式， 但不限於此。而形成於第一表面271與第二表面272上的 粗化結構，其粗化程度（表面粗糙度，RMS)也可根據出光的 需求，透過調整蝕刻液的種類、電化學蝕刻時間' 離子束 轟擊強度與時間等參數而相同或不同。此外，為了裝置整 體的電性連結設計，第一表面271與第二表面272上分別 設置圖案化之導電層，亦即導電連結結構291與292，而 第一表面271與第二表面272之間也可選擇性設置導電連 結結構293，用以電性連結兩表面上的電性元件。在第一 表面271上，設置有形成於單一成長基板21上的複數第一 發光二極體單元23,本實施例中第一發光二極體單元23 有兩個，但並不以此數目為限。其中，每一個第一發光二 極體單元23包含一 P型半導體層231、一發光層232、以 及一 η型半導體層233，藉由覆晶的方式，將這些第一發 光二極體單元23上的電極結構28與第一表面271上的導 電連結結構291相對接合，電極結構28與導電連結結構 201238074 291之間更可選擇性地包含有連結的焊料（圖未示）。相同 地’在第二表面上’設置有形成於單一成長基板22上的複 數個第二發光二極體單元23，，本實施例中第二發光二極體 單元23’有兩個’但並不以此數目為限，而第一表面271 與第二表面272上第一發光二極體單元23與第二發光二極 體單元23’的種類也可選擇性更換，不需相同。其中，每一 個第二發光二極體單元23,包含一 p型半導體層231，、一 發光層232’、以及一 n型半導體層233，，藉由覆晶的方式， 將這些第二發光二極體單元23,上的電極結構26與第二表 面272上的導電連結結構292相對接合，電極結構28,與導 電連結結構292之間更可選擇性地包含有連結的焊料（圖未 示）。除此之外’為了增加覆晶式發光二極體單元23與23’ 的發光效率’也可選擇性地在p型半導體層231及/或231， 鄰近承載基板的一侧製作反射結構25，相同地，例如可以 為金屬反射層或分布式布拉格反射層（DBR，distributed Bfagg reflector)等。本實施例中，其中，成長基板之材質係 可包含但不限於鍺（germanium，Ge)、珅化鎵（gallium arsenide，GaAs)、構化銦（indium phosphide，InP)、藍寶石 (sapphire)、碳化石夕（silicon carbide)、石夕（silicon)、氧化鐘銘 (lithium aluminum oxide，LiAl〇2)、氧化鋅（zinc oxide， ZnO)、氮化鎵（gallium nitride，GaN)、氮化铭（aluminum nitride)等等。此外，透過導電連結結構291，第一表面271 201238074 上的兩個第一發光二極體單元23彼此形成電性連結’透過 導電連結結構292，第二表面272上的兩個第二發光二極 體單元23,彼此形成電性連結，透過導電連結結構293 ’更 使得第一表面271上的兩個第一發光二極體单元23與第二 表面272上的兩個第二發光二極體23’形成電性連結。然 而，實際上的實施方式並不以此為限，第一表面271及/或 第二表面272上的導電連結結構291、292可以為陣列式的 排列，而第一發光二極體單元23及/或第一發光二極體單 元23’也可以相對應為陣列式的排列。此外’形成發光二極 體裝置2之後，視裝置整體結構需求不同，成長基板21及 /或成長基板22可以選擇性地移除；而設置在第一表面271 及/或第二表面272發光二極體單元晶粒也不需相同，可以 是來自於不同成長基板的各種發光二極體單元晶粒。 接著，請參照第3圖，第3圖為本發明之第二實施例， 所提供為一種單面覆晶結構的發光二極體裝置3。發光二 極體裝置3具有一承載基板37，承載基板37具有一第一 表面34,在第一表面34上更包含有導電連結結構39，用 以使導電連結結構39上方的電性元件彼此間進行電性連 結。在第一表面34上，設置有形成於單一成長基板31上 的複數第一發光二極體單元35。其中，成長基板之材質係 可包含但不限於鍺（germanium，Ge)、珅化鎵（gallium arsenide，GaAs)、石粦化銦（indium phosphide, InP)、藍寶石 201238074 (sapphire)、碳化石夕（silicon carbide)、石夕（silicon)、氧化链銘 (lithium aluminum oxide，LiAl〇2)、氧化鋅（zinc oxide, ZnO)、氮化鎵（gallium nitride, GaN)、氮化 I呂（aluminum nitride)等等。本實施例中，第一發光二極體單元35有兩 個，但並不以此數目為限。其中，每一個第一發光二極體 單元35包含一 p型半導體層351、一發光層352、以及一 η型半導體層353，藉由覆晶的方式，將這些第一發光二極 體單元35上的電極結構36與第一表面34上的導電連結結 構39相對接合，電極結構36與導電連結結構39之間更可 選擇性地包含有連結的焊料（圖未示）。相同地，為了增加 裝置整體的發光效率，ρ型半導體層351鄰近承載基板37 的一側可以選擇性地形成反射結構38，而第一表面34上 也可以選擇性地形成反射結構（圖未示），例如可以為金屬 反射層或分布式布拉格反射層（DBR，distributed Bragg reflector)等。此外，除了在承載基板37的第一表面34上 形成粗化結構外，成長基板31的表面32及/或33也都可 以進行相當的粗化，再增加光摘出的效率。形成粗化結構 的方式例如可以為濕式#刻、電化學#刻、離子束轟擊等 方式，但不限於此。而形成於第一表面34與成長基板表面 32及/或33上的粗化結構，其粗化程度（表面粗缝度，rms) 也可根據出光的需求，透過調整姓刻液的種類、電化學姓 刻時間、離子束轟擊強度與時間等參數而相同或不同。此 201238074 外，第一表面37上的導電連結結構39可以為陣列式的排 列，而發光二極體單元35也可以相對應為陣列式的排列。 此外’’形成發光二極體裝置2之後’視裝置整體結構需 求不同，成長基板31可以選擇性地移除；而設置在第一表 面34上的發光二極體單元晶粒也不需相同，可以是來自於 不同成長基板的各種發光二極體單元晶粒。 綜上所述，本發明提出一種覆晶發光二極體裝置，藉 由反射層與不同粗化程度的粗化表面設置，使發光裝置具 有高的出光效率。此外，藉由設置於基板表面的導電連結 結構進行發光元件的電性連結，可解決傳統陣列式發光二 極體導線連結不良的根本問題。更進一步，發光裝置可延 伸至雙面覆晶的半導體發光裝置，使裝置發光的角度放 大’增加裝置可使用於不同領域的彈性。 本發明所列舉之各實施例僅用以說明本發明，並非用 以限制本發明之範圍。任何人對本發明所作之任何顯而易 知之修飾或變更皆不脫離本發明之精神與範圍。 【圖式簡單說明】 第1圖為一結構圖，顯示一傳統陣列式發光二極體裝置結 構圖， 第2圖為一結構圖，顯示依據本發明一實施例的發光二極 體裝置結構圖； 201238074 第3圖為一結構圖，顯示依據本發明另一實施例的發光二 極體裝置結構圖。 【主要元件符號說明】 1 :傳統陣列式發光二極體裝置； 2、3 :發光二極體裝置； 10 :基板； 12、23、23’、35 :發光二極體單元； 14 :溝渠； 16 :第二電極； 18 :第一電極； 19 :金屬導線； 21、22、31 :成長基板； 25、38、251、252 :反射結構； 28、28’、36 :電極結構； 27、37 :承載基板； 32、33 :表面； 34、271 :第一表面； 39、291、292、293 :導電連結結構； 272 :第二表面； 121、 231、231’、351 : p 型半導體層； 122、 232、232’、352 :發光層； 123、 233、233,、353 : η 型半導體層。 £ 12 ⑧201238074 VI. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode device, and more particularly to a structure of a flip-chip light-emitting diode array device having high light-emitting efficiency. [Prior Art] The principle and structure of the light-emitting diode (LED) are different from those of the conventional light source, and have the advantages of low power consumption, long component life, no need for warming time, fast response, and the like. , vibrating vibration, suitable for mass production, easy to meet the application requirements to make very small or array of components, the application in the market is quite extensive. For example, optical display devices, laser diodes, traffic signs, data storage devices, communication devices, lighting devices, and medical devices. The conventional array type LED 1 includes an insulating substrate 10 and a plurality of LED units 12 formed on the insulating substrate 10, including a p-type semiconductor layer 121 and a light-emitting layer 122. And an n-type semiconductor layer 123. Since the substrate 10 is not electrically conductive, the light-emitting diode units 12 can be insulated from each other after the trenches 14 are formed by etching between the plurality of light-emitting diode units 12, and the plurality of light-emitting diode units 12 are partially etched. To the n-type semiconductor layer 123, a first electrode 18 and a second electrode 16 are formed on the exposed region of the n-type semiconductor layer 123 and the p-type semiconductor layer 121, respectively. The first electrode 18 and the second electrode 16 of the plurality of light-emitting diode units 12 are selectively connected by the metal wires 19, so that a plurality of circuits are connected in series or in parallel between the 201238074 light-emitting diode units 12. However, when the circuit connection between the light-emitting diode units 12 is performed by the metal wires 19, the gap between the light-emitting diode units 12 and the trenches 14 is quite large, and the wire bonding is likely to occur when the metal wires 19 are formed. The problem of disconnection, which in turn affects the yield of the component. In order to solve the above problem, the light-emitting diode unit can be further combined with a carrier substrate (sub-mount) to form a light-emitting device in a flip chip manner. The light-emitting device comprises a carrier substrate having at least one conductive connection structure (circuit); at least one solder is located on the carrier substrate, and the light-emitting diode is fixed on the carrier substrate by the solder, and then conductive The connecting structure (circuit) is electrically connected to the electrode pad of the light emitting diode; wherein the carrier substrate may be a lead frame or a large mounting substrate to facilitate circuit planning and improve the lighting device heat radiation. SUMMARY OF THE INVENTION The present invention provides a light-emitting diode arrangement, and more particularly to a structure of a flip-chip light-emitting diode array device having an emission efficiency. The embodiment of the present invention provides a light emitting diode device including a carrier substrate having a first surface and a second surface first light emitting diode array relative to the first surface having a plurality of light-emitting diodes The body unit is disposed on the first surface in a flip chip manner; the second light emitting diode array has a plurality of second light emitting diode units disposed on the second surface of the 201238074 in a flip chip manner; wherein, at least one a conductive connection structure disposed on the first surface; and at least one second conductive connection structure disposed on the second surface; wherein the at least two first light emitting diode units are coupled to the first conductive connection structure to form an electrical The at least two second LED units are electrically connected to the second conductive connection structure. Another embodiment of the present invention provides a light emitting diode device including a carrier substrate having a first surface, and a first light emitting diode array having a plurality of first light emitting diode units arranged in a flip chip manner On the first surface; a first growth substrate having a second surface, the first LED array is formed on the second surface; and a first conductive connection structure disposed on the first surface, at least two The first light emitting diode unit is electrically connected to the first conductive connecting structure; wherein the first surface and the second surface are roughened surfaces. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. First, as shown in Fig. 2, a first embodiment of the present invention provides a light-emitting diode device 2 having a double-sided flip chip structure. The light-emitting diode device 2 has a carrier substrate 27 having a first surface 271 and a second surface 272, wherein the first surface 271 is opposite the second surface 272. The carrier substrate is not limited to a single substrate, and may be a composite carrier substrate composed of a plurality of substrates or a plurality of different materials. For example, the carrier substrate 27 may include two first carrier substrates and a second carrier substrate (not shown) that are bonded to each other, and carry the 201238074 first light emitting diode unit 23 and the second light emitting diode unit 23', respectively. In order to increase the luminous efficiency of the entire illuminating device, the first surface 271 and the second surface 272 may respectively form a reflective structure 251 or 252, for example, a metal reflective layer or a distributed Bragg reflector (DBR). Alternatively, the first surface 271 and the second surface 272 may also selectively form a roughened surface, respectively. The method of forming the roughened structure may be, for example, wet etching, electrochemical etching, ion beam bombardment, or the like, but is not limited thereto. The roughening structure formed on the first surface 271 and the second surface 272, the degree of roughening (surface roughness, RMS) can also be adjusted according to the requirement of light emission, the type of etching liquid, electrochemical etching time 'ion beam The bombardment intensity is the same or different from the parameters such as time. In addition, for the electrical connection design of the device as a whole, the first surface 271 and the second surface 272 are respectively provided with patterned conductive layers, that is, conductive connecting structures 291 and 292, and between the first surface 271 and the second surface 272. The conductive connecting structure 293 can also be selectively disposed to electrically connect the electrical components on both surfaces. On the first surface 271, a plurality of first LED units 23 are formed on the single growth substrate 21. In this embodiment, there are two first LED units 23, but the number is not limit. Each of the first light-emitting diode units 23 includes a P-type semiconductor layer 231, a light-emitting layer 232, and an n-type semiconductor layer 233. The first light-emitting diode units 23 are flip-chip mounted. The upper electrode structure 28 is opposite to the conductive connection structure 291 on the first surface 271, and the electrode structure 28 and the conductive connection structure 201238074 291 are more selectively contained with a joint solder (not shown). Similarly, 'a second surface' is provided with a plurality of second LED units 23 formed on a single growth substrate 22, and in this embodiment, the second LED unit 23' has two 'but The number of the first light-emitting diode unit 23 and the second light-emitting diode unit 23' on the first surface 271 and the second surface 272 is also selectively replaceable, and need not be the same. Each of the second LED units 23 includes a p-type semiconductor layer 231, a light-emitting layer 232', and an n-type semiconductor layer 233. These second light-emitting layers are formed by flip chip. The electrode unit 26 on the second body unit 26 is oppositely coupled to the conductive connection structure 292 on the second surface 272. The electrode structure 28 and the conductive connection structure 292 are more selectively included with the solder (not shown). . In addition, in order to increase the luminous efficiency of the flip-chip LED units 23 and 23', a reflective structure 25 may be selectively formed on the side of the p-type semiconductor layer 231 and/or 231 adjacent to the carrier substrate. Similarly, it may be, for example, a metal reflective layer or a distributed Bfagg reflector (DBR). In this embodiment, the material of the growth substrate may include, but is not limited to, germanium (Ge), gallium arsenide (GaAs), indium phosphide (InP), sapphire, carbon. Silicon carbide, silicon, lithium aluminum oxide (LiAl〇2), zinc oxide (ZnO), gallium nitride (GaN), nitride (aluminum) Nitride) and so on. In addition, through the conductive connecting structure 291, the two first light emitting diode units 23 on the first surface 271 201238074 are electrically connected to each other through the conductive connecting structure 292, and the second second light emitting diodes on the second surface 272 The body unit 23 is electrically connected to each other, and the two first light emitting diode units 23 on the first surface 271 and the two second light emitting diodes 23 on the second surface 272 are further transmitted through the conductive connecting structure 293 ′. 'Form an electrical connection. However, the actual implementation manner is not limited thereto, and the conductive connection structures 291 and 292 on the first surface 271 and/or the second surface 272 may be an array arrangement, and the first LED unit 23 and / or the first light-emitting diode unit 23' may also correspond to an array arrangement. In addition, after the light-emitting diode device 2 is formed, the growth substrate 21 and/or the growth substrate 22 may be selectively removed depending on the overall structural requirements of the device; and the first surface 271 and/or the second surface 272 may be light-emitting. The polar body unit grains do not need to be the same, and may be various light emitting diode unit crystal grains from different growth substrates. Next, please refer to FIG. 3. FIG. 3 is a second embodiment of the present invention, which is provided as a single-sided flip-chip structure of the light-emitting diode device 3. The light-emitting diode device 3 has a carrier substrate 37. The carrier substrate 37 has a first surface 34. The first surface 34 further includes a conductive connecting structure 39 for electrically connecting the electrical components above the conductive connecting structure 39. Electrical connection. On the first surface 34, a plurality of first light-emitting diode units 35 formed on a single growth substrate 31 are provided. The material of the growth substrate may include, but is not limited to, germanium (Ge), gallium arsenide (GaAs), indium phosphide (InP), sapphire 201238074 (sapphire), carbonized stone eve ( Silicon carbide, silicon, lithium aluminum oxide (LiAl〇2), zinc oxide (ZnO), gallium nitride (GaN), nitrided aluminum nitride and many more. In this embodiment, the first light-emitting diode unit 35 has two, but is not limited to this number. Each of the first light-emitting diode units 35 includes a p-type semiconductor layer 351, a light-emitting layer 352, and an n-type semiconductor layer 353. The first light-emitting diode units 35 are flip-chip mounted. The upper electrode structure 36 is oppositely coupled to the conductive connecting structure 39 on the first surface 34, and the electrode structure 36 and the conductive connecting structure 39 are more selectively contained with solder (not shown). Similarly, in order to increase the luminous efficiency of the device as a whole, the reflective structure 38 may be selectively formed on the side of the p-type semiconductor layer 351 adjacent to the carrier substrate 37, and the reflective structure may be selectively formed on the first surface 34 (not shown) For example, it may be a metal reflective layer or a distributed Bragg reflector (DBR) or the like. Further, in addition to the formation of the roughened structure on the first surface 34 of the carrier substrate 37, the surface 32 and/or 33 of the growth substrate 31 can be relatively roughened, thereby increasing the efficiency of light extraction. The manner of forming the roughened structure may be, for example, wet etching, electrochemical etching, ion beam bombardment, or the like, but is not limited thereto. The roughening structure formed on the first surface 34 and the growth substrate surface 32 and/or 33, the degree of roughening (surface roughness, rms) can also be adjusted according to the demand of the light, by adjusting the type of the engraved liquid and electrifying. The parameters such as the time of the last name, the intensity of the ion beam bombardment and the time are the same or different. In addition to the 201238074, the conductive connecting structures 39 on the first surface 37 may be arranged in an array, and the LED units 35 may also be arranged in an array. In addition, after the formation of the light-emitting diode device 2, the growth substrate 31 can be selectively removed, and the light-emitting diode unit crystals disposed on the first surface 34 need not be the same. It may be various light emitting diode unit crystal grains from different growth substrates. In summary, the present invention provides a flip-chip light-emitting diode device which has a high light-emitting efficiency by providing a reflective layer and roughened surfaces of different degrees of coarsening. In addition, the electrical connection of the light-emitting elements by the conductive connection structure provided on the surface of the substrate can solve the fundamental problem of poor connection of the conventional array type light-emitting diode. Furthermore, the illuminating device can be extended to a double-sided flip-chip semiconductor illuminating device to enlarge the angle at which the device emits light. The increasing device can be used for flexibility in different fields. The examples of the invention are intended to be illustrative only and not to limit the scope of the invention. Any alterations or variations made by the present invention to those skilled in the art can be made without departing from the spirit and scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a structural diagram showing a structural diagram of a conventional array type light-emitting diode device, and FIG. 2 is a structural view showing a structure diagram of a light-emitting diode device according to an embodiment of the present invention. 201238074 FIG. 3 is a structural diagram showing a structural diagram of a light emitting diode device according to another embodiment of the present invention. [Major component symbol description] 1 : Traditional array type light-emitting diode device; 2, 3: light-emitting diode device; 10: substrate; 12, 23, 23', 35: light-emitting diode unit; 14: trench; 16: second electrode; 18: first electrode; 19: metal wire; 21, 22, 31: growth substrate; 25, 38, 251, 252: reflective structure; 28, 28', 36: electrode structure; : carrier substrate; 32, 33: surface; 34, 271: first surface; 39, 291, 292, 293: conductive connection structure; 272: second surface; 121, 231, 231', 351: p-type semiconductor layer; 122, 232, 232', 352: light-emitting layer; 123, 233, 233, 353: n-type semiconductor layer. £ 12 8