TW201234653A - Group III nitride semiconductor light-emitting device - Google Patents

Group III nitride semiconductor light-emitting device Download PDF

Info

Publication number
TW201234653A
TW201234653A TW100140784A TW100140784A TW201234653A TW 201234653 A TW201234653 A TW 201234653A TW 100140784 A TW100140784 A TW 100140784A TW 100140784 A TW100140784 A TW 100140784A TW 201234653 A TW201234653 A TW 201234653A
Authority
TW
Taiwan
Prior art keywords
stripe
nitride semiconductor
semiconductor light
emitting device
groove
Prior art date
Application number
TW100140784A
Other languages
English (en)
Chinese (zh)
Inventor
Koji Okuno
Atsushi Miyazaki
Original Assignee
Toyoda Gosei Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Kk filed Critical Toyoda Gosei Kk
Publication of TW201234653A publication Critical patent/TW201234653A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

Landscapes

  • Led Devices (AREA)
TW100140784A 2010-11-24 2011-11-08 Group III nitride semiconductor light-emitting device TW201234653A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010261166A JP2012114204A (ja) 2010-11-24 2010-11-24 Ｉｉｉ族窒化物半導体発光素子およびその製造方法

Publications (1)

Publication Number Publication Date
TW201234653A true TW201234653A (en) 2012-08-16

Family

ID=46063496

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100140784A TW201234653A (en) 2010-11-24 2011-11-08 Group III nitride semiconductor light-emitting device

Country Status (4)

Country Link
US (1) US20120126241A1 (OSRAM)
JP (1) JP2012114204A (OSRAM)
CN (1) CN102479899A (OSRAM)
TW (1) TW201234653A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI458128B (zh) * 2010-11-25 2014-10-21 Toyoda Gosei Kk 三族氮化物半導體發光元件的製造方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5811009B2 (ja) 2012-03-30 2015-11-11 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体
US10090437B2 (en) 2013-02-11 2018-10-02 Lumileds Llc LED having etched light emitting surface for increased light extraction
JP6020357B2 (ja) 2013-05-31 2016-11-02 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体
TWI597863B (zh) * 2013-10-22 2017-09-01 晶元光電股份有限公司 發光元件及其製造方法
JP6550926B2 (ja) 2014-05-30 2019-07-31 日亜化学工業株式会社 窒化物半導体素子およびその製造方法
CN105280776B (zh) * 2014-05-30 2019-01-01 日亚化学工业株式会社 氮化物半导体元件及其制造方法
US9773946B2 (en) 2015-02-18 2017-09-26 Nichia Corporation Light-emitting element comprising a partitioned sapphire substrate
CN105720153A (zh) * 2016-04-11 2016-06-29 厦门乾照光电股份有限公司 一种提高背光源亮度的衬底
JP6798452B2 (ja) * 2017-08-23 2020-12-09 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
JP6783990B2 (ja) * 2017-09-07 2020-11-11 豊田合成株式会社 Ｉｉｉ族窒化物半導体素子の製造方法および基板の製造方法
CN113517379B (zh) * 2021-06-30 2024-12-20 福建晶安光电有限公司 一种图形化衬底及其制备方法、led芯片

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6580098B1 (en) * 1999-07-27 2003-06-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
JP4055503B2 (ja) * 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
US7683386B2 (en) * 2003-08-19 2010-03-23 Nichia Corporation Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth
KR100659373B1 (ko) * 2006-02-09 2006-12-19 서울옵토디바이스주식회사 패터닝된 발광다이오드용 기판 및 그것을 채택하는 발광다이오드
KR101262226B1 (ko) * 2006-10-31 2013-05-15 삼성전자주식회사 반도체 발광 소자의 제조방법
JP5353113B2 (ja) * 2008-01-29 2013-11-27 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI458128B (zh) * 2010-11-25 2014-10-21 Toyoda Gosei Kk 三族氮化物半導體發光元件的製造方法

Also Published As

Publication number Publication date
CN102479899A (zh) 2012-05-30
JP2012114204A (ja) 2012-06-14
US20120126241A1 (en) 2012-05-24

Similar Documents

Publication Publication Date Title
TW201234653A (en) Group III nitride semiconductor light-emitting device
US8896008B2 (en) Light emitting diodes having group III nitride surface features defined by a mask and crystal planes
JP5206923B2 (ja) 半導体発光素子
CN108735915B (zh) 用于oled蒸镀的荫罩及其制作方法、oled面板的制作方法
JP5870921B2 (ja) サファイア基板と半導体発光素子
US8299479B2 (en) Light-emitting devices with textured active layer
US8232578B2 (en) Light emitting semiconductor device
JP2012009522A5 (OSRAM)
CN102714152A (zh) 功能元件及其制造方法
CN102479753A (zh) 高性能应变源极-漏极结构及其制造方法
JP4974697B2 (ja) 発光素子及びその製造方法
CN103456854A (zh) 具有图形化界面的发光元件及其制造方法
JP2012129234A5 (OSRAM)
CN107004714A (zh) 半导体装置及半导体装置的制造方法
TW201143129A (en) Light emitting diode chip and manufacturing method thereof
JP2005175056A5 (OSRAM)
JP2017084839A5 (OSRAM)
TWI545752B (zh) 半導體裝置及其形成方法
CN217009213U (zh) 一种微型发光元件及显示装置
JP2012049466A5 (OSRAM)
CN108728789B (zh) 用于oled蒸镀的荫罩及其制作方法、oled面板的制作方法
TW201248917A (en) Semiconductor light emitting structure
CN209561369U (zh) 微型led器件及微型led阵列
CN114551674A (zh) 一种微型发光元件及其制备方法、显示装置
JP2010092903A (ja) 窒化物系半導体発光素子の製造方法