TW201233265A - Substrate for light-emitting element, and light emitting device - Google Patents

Substrate for light-emitting element, and light emitting device Download PDF

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Publication number
TW201233265A
TW201233265A TW100139112A TW100139112A TW201233265A TW 201233265 A TW201233265 A TW 201233265A TW 100139112 A TW100139112 A TW 100139112A TW 100139112 A TW100139112 A TW 100139112A TW 201233265 A TW201233265 A TW 201233265A
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Taiwan
Prior art keywords
light
substrate
emitting element
layer
metal layer
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TW100139112A
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Chinese (zh)
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Katsuyoshi Nakayama
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Asahi Glass Co Ltd
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Publication of TW201233265A publication Critical patent/TW201233265A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

Provided are: a substrate for a ceramic light-emitting element that has a concave section with reduced warpage of the entire substrate; and a light-emitting device using same that has highly reliable light directivity and electrical connectivity. The substrate for the light-emitting element has: a plate-shaped base with a flat main surface comprising a first inorganic insulating material; a frame comprising a second inorganic insulating material bonded to the upper side main surface of the base; and a mounting section for the light-emitting element in the bottom surface of the concave section, which is formed by using part of the upper side main surface of the base as the bottom surface thereof and an inside wall surface of the frame as the side surface thereof. The substrate for the light-emitting element is characterized by: being arranged on top of the concave section bottom surface, between the frame and the base and with at least part thereof straddling the outer circumference of the concave section bottom surface; and by having a metal layer provided so as to not touch the outer edge of the base.

Description

201233265 六、發明說明： 【發明所屬气技術領域】 發明領域 本發明係有關於〜種發光元件用基板及使用其之發光 裝置。 t先前技冬好1 發明背景 習知’用以搭載發光二極體元件等之發光元件的配線 基板’係由在絕緣基板的表面或内部已配設有配線導體層 的構造所構成。作為讀配線基板之代表性的例子有由氧化 紹陶究所構成之絕緣基板（以下，以氧化鋁基板稱之）。於該 氧化铭基板其上部形成有用以收納發光元件的凹部，且於 其表面及内部配設有由鎢、鉬等之高溶點金屬粉末所構成 的數個配線導體層’而該配線導體層係與被收納於凹部内 之發光元件電氣連接者。如所述般之搭載有發光元件的配 線基板上（以下，有時亦稱之為發光元件用基板，或僅以基 板稱之）’更有使發光元件產生的熱快速地散熱、或使發光 元件所發出的光儘可能地向前方反射等之以電氣連接以外 的目的而設有金屬層的情況很多。 又，作為發光元件用基板，除了氧化鋁基板以外，因 可用低溫燒成化、低介電常數及高電傳導性之銅、銀配線 的緣故，而提案有經由低温共燒陶瓷（Low Temperature Co-fired Ceramics。以下，以LTCC表示。）所構成的絕緣基 201233265 前述具有凹部之發光元件用基板，一般而言，係至少 藉由燒成已積層構成凹部底面之平板狀的生胚片（亦可稱 之為陶瓷基體前驅物）、與構成凹部壁部之具有貫通孔的生 胚片的積層體（亦可稱之為陶瓷框體前驅物）來製造。此時， 配線導體層係於將生胚片積層體燒成之前，於生胚片積層 之前或之後形成於各生胚片表面或内部，而在生胚片燒成 時同時燒成。前述陶瓷基體前驅物及陶瓷框體前驅物以單 層構成亦可，亦可以多數層構成。 此處，以該方式所製造之具有凹部的發光元件用基板 中，在前述製造過程中會發生因燒成收縮所致之應力集中 等，而產生所獲得之構成基板凹部底面的平板狀陶瓷基體 的中央部會翹曲的問題。若使用該具有翹曲的基板的話， 則搭載發光元件於基板上時，會有因發光元件的搭載位置 或接合引線的位置偏離而發生斷線、因於發光元件的傾斜 狀態下搭載而影響光的方向性等之方面的問題。又，使用 焊锡將該基板安裝於印刷電路板等之時，會因該基板背面 側之翹曲，在基板與焊錫之間有部分會產生空隙，而有成 為斷線的原因或成為散熱的阻礙等的問題。 為解決上述具有凹部之發光元件用基板之翹曲的問 題舉例而5 ’於專利文獻1中，針對構成凹部底面之平板 狀的陶錄體或構成凹部壁部之具有貫軌的喊構件， 系採用著於兩者的界面附近，使形成由與構成其以外之部 刀的陶:紐料收縮性相異的喊材料所構賴層的方法。 又，於專利文獻2及專利文獻 3中，就構成凹部底面之 4 201233265 平板狀的陶瓷基體’則藉由積層數片生胚片來製作，該數 片生胚片包含在相當於凹部底面的部分具有貫通孔之厚度 的溥生胚片，藉此’在抑制中央部（凹部底面）的勉曲之同 時，進而更使形成凹處，並以將該凹處部分充填的方式於 前述平板狀之陶瓷基體的表面全面或一部分上形成導體 層，藉以謀求凹部底面的平坦化。 先行技術文獻 專利文獻 專利文獻1:日本特開2007-281108號公報 專利文獻2:日本特開2〇1〇_186880號公報 專利文獻3:日本特開2010—186881號公報 c發明内容:J 發明概要 發明欲解決之課題 本發明係為解決前述具有凹部之發光元件用基板之翹 曲的問題而作成者，且以提供一種基板全體之翹曲量已受 減低之具有凹部的發光元件用基板、及使用其之對光的= 向性或電氣連接等可靠性高的發光裝置為目的。 用以解決課題之手段 本發明之發光元件用基板，係具有：基體，係由第仏 機絕緣材料所構成且^騎坦之板狀者；及框體，係; =接合於前述基體之上側主面，且由第2無機絕緣材料所構 L又，在以前述基體之上側主面的—部分為底面且以前 '樞體之内壁面為側面所形成的凹部之底面，具有發光元 201233265 件之搭載部，該發光元件用基板之特徵在於：於前述凹部 底面上，具有金屬層，該金屬層係至少一部分跨過凹部底 面的外周而配置於框體與基體之間’且以未達基體外緣的 方式配設者。 於本發明之發光元件用基板中，前述金屬層係以跨過 前述凹部底面之外周全周且被配置於框體與基體之間為 且。又，前述金屬層跨過前述凹部底面的外周所配設之部 分的外周合計長度，相對於前述凹部底面之外周全長係以 40%以上為宜。又，從前述凹部底面的外周起，至前述框 體與基體間之前述金屬層的端緣為止的距離(L)係以1 〇〇〜 200μηι為宜。 表示上述數值範圍之「〜」，只要無特別的規定，則將 其前後所記載的數值以作為包含下限值及上限值的意思來 使用，以下本說明書中之「〜」係以同樣的意思來使用。 於本發明之發光元件用基板中，前述金屬層係藉由如前 述般設置而具有減低基體全體之翹曲的機能，且該金屬層， 舉例而言亦能兼具與發光光件的電極電氣連接的元件連接 端子或散熱層，及反射層或用以形成反射層之底層。此時， 前述金屬層係跨凹部底面的外周且被配置在框體與基體之 間。而其中又以作為配設形狀可比較自由地選擇的反射層， 或作為用以形成反射層之底層來設置金屬層為宜。 進而言之，於本發明之發光元件用基板中，個別構成 前述基體及框體的前述第1無機絕緣材料及第2無機絕緣材 料係皆為包含玻璃粉末與陶瓷粉末之玻璃陶瓷組成物的燒 201233265 結物，且構成前述金屬層的金祕以銀作為域分的金屬 為宜。 又’於本發明之發光元件用基板中，前述第丨無機絕緣 材料及第2無機絕緣㈣係皆為氧化賴$組成物的燒結 物’且構成A述金屬層的金屬係以選自於由鶴及_所構成 群組中之至 > -種作為主成分的金屬為宜。又，於前述以 選自於由鶴及賴構成群組巾之至少—種作為域分的金 屬層上，則彡成有崎作為主成分的金屬反射層為宜。 本發明之發光裝置其特徵在於具有：前述本發明之發 光疋件用基板，及搭載於前述發光元件用基板的發光元件。 發明效果 ‘土"、升负凹邵的發光元件用基 板中’基板全體德曲量已受減低的發光元件用基板。又， ⑽本發明，藉由將發光元件搭載於所述之發光元件用基 板上，射提供-觀光的方Μ錢 高的發光裝置。 ㈣寺Ί 生 圖式簡單說明 第_、剛侧示本發明之發光元仙基板之實施 ^之—例的圖式’⑷為平面圖，（b)為截面圖。 ，第2⑷、⑻圖係顯示本發明之發光元件用基板之實施 形態之別例的圖式，⑷為平面圖，（b)為截面圖。 第3(a)、（b)圖係顯示使用了示於 ^ ^ ^ 於苐1圖之發光元件用基 戴面圖。 ^的圖式，為平面圖，⑻為 201233265 H 3^ Ji 用以實施發明之形態 以下，將邊參照圖式邊說明本發明之實施形態。另外， 本發明並非侷限於以下說明而做解釋者。 本發明之發光元件用基板，係具有：基體’係由第1無 機絕緣材料所構成且主面為平坦之板狀者；及框體，係業 已接合於前述基體上側主面，且由第2無機絕緣材料所構成 者；又，在以前述基體之上側主面的-部分為底面且以前 述框體之内壁面為側面所形成的凹部之底面，具有發光= 件之搭載部；該發光元件用基板之特徵在於：於前述凹 底面上，具有金屬層，該金屬層係至少-部分跨過凹部^ 面的外周而配置於框體與基體之間，且以未達基體外緣的 方式配設者。 本說明書中，所謂「主面為平坦之板狀的基體」係指： 上側、下側社面皆以目視程度能視為具有平板狀程度之 平坦面的基體，以下，所謂「略平板狀的基體」係指上下 的主面為由如所逑般之平坦面所構成的基體。&於以下 =樣地附加上了「略」之敍述，只要無細說關係指以 目視程度可做如所述之認知程度者。 =發明，於具有凹部且於其底面上搭載有發光元 二=絕=料所構成的發光元件用基板中，藉由於 =二少一部分跨過凹部底面的外周而配置 ;構成㈣壁面的框體與構相部底面的 未達基體外賴方式配設的金制，可使㈣元剌基板 201233265 的翹曲量減低，具體而言，係可使於中央翹起之翹曲的比 例減低。藉此，凹部底面會被平坦化，而減低搭載發光元 件時之發光元件的位置偏離或傾斜，且能抑制所謂光的方 向性與設計不同的問題、或因接合引線之位置偏離所致之 斷線的發生。又，使用焊錫將該發光元件用基板安裝於印 刷電路板等之際時，亦能減低以基板之翹曲為原因所發生 之斷線或散熱性惡化等的問題。 於本發明之發光元件用基板中，通常，於配設設置於 凹部底面之元件連接端子或散熱層、反射層或用以形成反 射層之底層等時，只要其一部分能以跨過凹部底面之外周 的方式設置的話，則用以減低前述基板全體之翹曲的金屬 層與該等並無另行設置之必要。即，本發明中，通常，用 以減低翹曲的金屬層，係其之一部分為由以跨過凹部底面 之外周的方式配設之前述元件連接端子、散熱層、反射層 或用以形成反射層之底層等所構成。而其中又以設置前述 金屬層作為配設形狀可較為自由地選擇的反射層或反射層 形成用的底層為佳。 本發明中用以減低基板之翹曲而配設於凹部底面的金 屬膜田金屬層係用來作為構成前述反射層的層時，該反 射廣的金屬層亦可為本發明中之金屬層，又當金屬層係用 來作為構成前述底層的層時’該底層的金屬層亦可為本發 明中之金屬層。 又，作為個別構成前述基體及框體的第1無機絕緣材料 及第2無機絕緣材料’具體而言可列舉如氧化鋁質燒結物 201233265 (氧化鋁陶瓷）或氮化鋁質燒結物、富鋁紅柱石質燒結物及包 含玻璃粉末與陶瓷粉末之玻璃陶瓷組成物的燒結物（以 下，有時以LTCC(低溫共燒陶免）記之）等之陶瓷。因該等陶 瓷個別之燒成溫度不同的緣故，通常，基體與框體係由同 種的陶瓷所構成。本發明中’作為第1及第2無機絕緣材料， 由製造的容易性、易加工性及經濟性等的觀點而言以LTCC 為宜。另外’第1及第2無機絕緣材料，在由同種的陶览所 構成之限度内，例如以LTCC而言對基體適用能獲得高抗贊 強度的玻璃陶瓷組成物，而對框體則適用重視漫散反射性 的玻璃陶瓷組成物般，按照基體及框體之要求特性，玻璃粉 末及陶瓷粉末的原料組成亦可不同。 此處，當選擇了 LTCC作為前述無機絕緣材料時，因可 低溫燒成故使用以銀為主成分的金屬層（舉例而言，指含有 銀95質量％以上的金屬層或合金層）來作為前述金屬層，並 宜以此作為反射層來設計發光元件用基板。又，當選擇了 氧化鋁陶瓷等的高溫共燒陶瓷作為前述無機絕緣材料時， 因必須高溫燒成故選擇由高熔點金屬所構成的金屬層來作 為前述金屬層，該高熔點金屬係選自於由鎢及鉬所構成群 組的高熔點金屬之至少一種作為主成分。為了減低基板的 翹曲所形成之該等高熔點金屬層因作為反射層的機能不足 之故，通常，於燒成後會將使用了銀等之反射性良好的金 屬的反射層形成於高熔點金屬層上。於採用如所述之高熔點 金屬層時，高熔點金屬層係被設計成亦可作為底層來發揮機 201233265 以下將就第i及第2無機絕緣材料個別由ltcc而成之 基體與框體’且經設計為以金屬層作為反射層的發光元件 用基板予以說明，作為本發明之發光元件用基 形態的一例。 貝 第1圖中之⑷為平面圖，係顯示本發明之實施形離之用 以搭載i個發光元件的發光元件用基如之 ⑻ X-X線截面圖。 ⑼為⑷之 發光元件用基板1，係具有以其為主 的、且從上方所見之形狀為略正方形 之略千2 基板時具有搭載發光元件之上:= 度^本例中其相反側的面則令為背面23。基體2的厚 小相無受制㈣，可令其與通 配線基板相同。發来元株田A4c1 知尤兀忤用 係以槿Λ歧 土板1，更具有框體3，該框體3 的凹部4之方?^之主面21的中央略圓形部分作為底面24 於基體主面21的周緣部者。另外，該 =1=25，係味體3内側__。^^ 件的凹部底面24的略中央部係成為搭載有發光元 凹。P4之側面25’係以對其底面呈略垂直地設 其體主Γ3,係被成形為上下開口部為相同的形狀，並與 ㈣Γ周緣部接合。框體3的形狀亦可按照所需，成 狀者。1 σ上侧的開口部大、而下側的開口部小之側面為錐 前述 M之倒面25與發光元件搭载部22之端 緣間的 201233265 距離之具體數值，雖會依所搭載之發光元件的輸出或大小 (尺寸）而異’且更會視所需例如後述之密封層所含有的碑光 體的種類或其含量、轉換效率等而不同 ，但舉例而言，亦 可將發光凡件所發出的光朝光取出方向最有效率地發光的 距離作為指標來使用。 又則述凹部4之側面25的高度，即從凹部4之底面24 至框體3之最高位置為止的距離（即，框體3的高度），只要是 能將源自於所搭載之發光元件的光朝光取出方向充分反射 的話’則不受特別限制。具體而言，雖會依據發光裝置的 設計，例如，所搭載之發光元件的輸出或從前述發光元件 搭載部之端緣的距離等而異，但由搭載發光裝置之製品的 形狀或有效率地充填含有用以轉換波長之填光體的密封持 等之觀點而5，宜比已搭載有發光元件時之發光元件之最 高部分的高度高出100〜500μιη。另外，框體3的高度係以 發光几件之最高部分的高度經加上450μη1的高度以下較 佳，加上了 400μηι的高度以下更佳。 本例中之基體2及框體3，係皆以LTCC所構成。關於構 成基體2之LTCC材料，由發光元件搭載時，及抑制其後之 使用時之損傷等的觀點而言，舉例而言，經由該LTCC材料 所形成之基體2及框體3的抗彎強度係以25〇Mpa以上為 宜。而構成框體3之LTCC材料，考量與基體2的黏著性，則 以與構成基體2的材料相同者為宜。 又，按照發光裝置之要求特性，亦可以具有漫散反射 性之LTCC材料作為前述LTCC材料。具有漫散反射性之 12 201233265 去，目1 要為在發光裝置中能見到光取出效率的提升 ’二不受特別限制。理想的係使用能獲得相當於銀反射 取出效率者。另外’使用藉由JISK7105所測定之霧 =a Z e)值作為評估漫散反射性的指標，其值係以9 5 %以上 為宜，98。/。以上較佳。 盥另外，關於構成所述之基體2及框體3之包含玻璃粉末 與陶宪粉末之破璃喊組成物之燒結物的㈣組成、燒結 條件等係如後述。 於發光元件用基板丨中’在以基體2之主面以的一部分 所構成之凹部底面24上，設置有與發光元件所具有的一對 電極個別電氣連接的元件連接端子〗，其係在賴發光元件 :載P22的周邊部、具體而言係於兩側，以相對向的方式 且為略長方形地設置有一對者。 於基體2的背面23處，設有與外部電路電氣連接之一對 卜P連接&子6,且於基體2的内部設有一對與前述元件連 接端子5及外部連接端子6電氣連接的貫通導體7。關於元件 連接端子5、外部連接端子6及貫通導體7，該等只要係經由 發光tl件s元件連接端子5—貫通導體7—外部連接端子 4外部電路」的路徑電氣連接的話，則其所配置的位置或 I狀不又第1圖所示者所限制，可適宜地調整。 该等疋件連接端子5、外部連接端子6及貫通導體7(以 下’有時亦將該等統稱為「配線導體」。）之構成材料，通 厂I，、 * 要係與用於發光元件用基板的配線導體相同的構成材 料’則可無特別限制地使用^作為該等配線導體的構成材 13 201233265 料，具體而言可料銅、銀、㈣作為以分的金屬材料 為例。而如此類之金屬材料之中，又以由銀、銀與白金所 構成的金屬材料，或純與纪所構成的金屬材料宜於使用。 另外，於元件連接端子5、或外部連接端子6中’在由 該等之金屬材料構成且宜為厚度Μ —的金屬層上保 護該層免於氧化或硫化並具有導電性的導電性保護層（無 圖示）’係、以包覆包含其端緣全體的方式來形成的構曰造為 宜。導電性保護層只要係由具有保護前述金屬層之機能的 導電性材料所構成則不受特別限制。具體而言，可列舉如 由鍵錄、鍍鉻、锻銀、鍵鎳/銀、錢金、鍵錄/金等所構成的 導電性保護層。 於本發明，該等之中’作為包覆並保護前述元件連接 端子5及外部連接端子6的導電性保護層，舉例而言，就由 能獲得祕與後述發光元件之電極連接的接合引線或與其 他之連接材料間之良好的接合等之方面來說，至少於最外 層以使用具钱金層的鑛金屬層為宜。導電性賴層雖亦 可僅由錄金層來形成，但以於_層上經施減金形成鍵 錄/金層較佳。此時，$電性保護層的膜厚，鑛鎳層以2〜 20μηι為宜，鍍金層以山丨〜丨〇μηι為宜。 於本發明之發光元件用基板中為了減低翹曲所配設之 金屬層、於本例t係兼具反射層之機能的金屬層8，係包含 了於凹部4之底面24上，除了該底面24之已配設有前述一對 元件連接端子5的部分與其周圍附近以外的區域；進而其端 緣跨過凹部底面24的外周人而配置於框體3與基體2之間，且 201233265 以未達基體2的外緣的方式配設。此處，所謂「除了已配气 有前述元件連接端子5的部分與其周圍附近以外的區域」， 具體而言係指已考慮了元件連接端子5與金屬層8係電氣絕 緣，進而更考慮到因積層時或印刷時的位置偏離等之製造 面上的狀況不佳所致之絕緣性的惡化，或使不發生元件連 接端子5之導電性的阻礙之區域；則宜為自元件連接端子5 之端緣起ΙΟΟμιη以上外側的區域，較佳係自前述端緣起 150μηι以上外側的區域。 如第1圖所示，於發光元件用基板1中，金屬層8,係與 凹部4之底面24的外周為同中心之相似形狀（略圓形"且跨 底面24之外周全部。此處係形成為略圓形的端緣。從凹部* 之底面24的外周起至金屬層8之端緣為止的距離L，係以能 使發光元件用基板的魅曲充分減低，且框體3與基體2的接 合具有足夠的黏著強度來適當地選擇。進而言之，若考量 於製造發光元件用基板1時之，金屬層8之配設位置的偏離 (印刷偏離）或框體3與基體2之積層偏離等的話，則從凹部4 之底面24的外周起至金屬層8之端緣為止的距離L，係以1〇〇 〜200μηι為宜，130〜Ι70μιη較佳。 另外，於第1圖所示之發光元件用基板丨中，前述金屬 層8係以其端緣跨凹部4之底面24的外周全部且及於基體2 與框體3之間的方式形成，但如後述之第2圖所示的例子 般，金屬層8亦可按照所需以其端緣跨底面24之外周的一部 分的方式來形成。又，於本例中因金屬層8係以作為反射層 來配堍’故儘可能地以大面積配設於凹部4之底面上，但 15 201233265 :於二須2慮光反射性能下而可配設金屬層的情況而 本發明之效果的範圍内，金屬層雜可適當 丄σ要A击由使發光几件用基板1之魅曲減低的觀點而 二:=!基體2燒成收縮早，且具有於燒成中抑制變形 =1=力用性質者即無受特別限制。但是，在第1圖所示 &故作A基板1巾因域層8係兼具作為反射層之機 =1!構成金屬層8的金屬材料，係以與輯板可 光反射性優越之銀作為主成分之金屬材料(例 如’含有銀95質量％以上之金屬材 成分之金屬材料，具體而言係可舉如_、銀與白 成的金屬材料’或是由銀錢所構成之金屬材料=所構 =銀與白金所構成的金屬材料，或是由銀與料構二的^ 屬材料’具體而言可舉相對於金屬材料總量之、， 比率為5質量％以下的金屬材料為例。而該等之中又^巴的 銀所構成之金屬層8因在本發明中能獲得高反=僅由 理想。 沒點而 就金屬層8的膜厚而言，係以5〜Μμπι為宜，8〜12 較佳。當金屬層8的膜厚小於5μηι時則有無法獲得充分的 度或光反射性之虞，又，若大於15μηι則不僅於經濟上不 利’同時於製造過程中會發生因與基體2或框體3之熱膨 差所致之變形，而有變得無法充分達成減少基板翹曲之声 又，第1圖所示之發光元件用基板1，係具有絕緣保▲蔓 金屬層8之保護膜玻璃層9。保護膜玻璃層9，除了已形成於 201233265 凹部4之底面24上之金屬層8之及於基體2及框體3之間的部 分以外’係以包覆含有金屬層8之端緣的全體的方式形成。 此處，只要在確保已設置於凹部底面24上之元件連接端子5 與金屬層8的絕緣性的限度内，保護膜玻璃層9之端緣雖亦 可與元件連接端子5相接，但考量於積層時或印刷時之位置 偏離等之製造面上之不良狀況的發生’兩者之間的距離係 以75μηι以上為宜，ΐ〇〇μιη以上較佳。 對於金屬層8之端緣被保護膜玻璃層9所包覆著的部分 中，金屬層8之端緣與保護膜玻璃層9之端緣之間的距離， 在充分保護金屬層8免於外部之老化變質因素下的範圍内 以令為儘可能的短的距離為佳。具體而言，係以1〇〜5〇μπι 為宜’ 20〜30μιη較佳。當該距離小於i〇pm時，則會因金屬 層8的曝露，使構成金屬層8的金屬材料、特別是為眾人所 吾好使用之含有以銀作為主成分的金屬材料會發生氧化或 硫化等而有光反射性降低之虞，而若大於5〇μηι的話，結果 則會因金屬層8所配設之區域的面積減少而使光反射性降 低。 保護膜玻璃層9之膜厚，雖會因發光裝置的設計而異， 但若要確保充分之絕緣保護之機能，且考量製造成本及因 與基體之熱膨脹差所致之變形等，則以5〜5〇μηι為宜。又， 保護膜玻璃層9的表面，至少於發光元件搭载部22中係以 具有為了獲得充分之散熱性的表面平滑性為宜。該表面平 滑性具體而言，在確保充分的散熱性之同時，且由製造上 之容易性之觀點而言，其表面粗糙度尺3係以〇〇3μηι以下為 17 201233265 宜，Ο.ΟΙμηι以下較佳。另外，構成保護膜玻璃層之玻璃的 原料組成，將於後述之製造方法中予以說明。 另外，於第1圖所示之發光元件用基板1中，保護膜玻 璃層9雖並無包覆已形成於基體2與框體3之間的金屬層8， 但只要在無損本發明效果之限度内亦可依需要，亦可以包 覆已形成於基體2與框體3之間的金屬層8的方式形成。 雖於第1圖中無被顯示，但於發光元件用基板1中，為 了減低熱阻亦可在基體2内部與基體2之主面21垂直相交的 方向埋設散熱通孔，亦或可在平行於主面21的方向配置散 熱層。散熱通孔，舉例而言，為比搭載部22小之柱狀，且 於搭載部22的正下方設置有數個。設置散熱通孔時，係以 未達基體2之主面21的方式設置於由背面23至主面21之附 近處為宜。藉令為如所述之配置，能使主面21，特別是可 使搭載部22的平坦度提升、降低熱阻、又能抑制搭載了發 光元件時的傾斜。 接著，除了已形成有金屬層的區域不同以外，就與前 述於第1圖所示之發光元件用基板經完全相同設計之發光 元件用基板予以說明，以作為本發明之發光元件用基板之 實施形態之一別例。 第2圖為顯示作為本發明實施形態之與用以搭載1個發 光元件之上述第1圖所示發光元件用基板1不同之另一例發 光元件用基板1的平面圖（a)、及其Χ-Χ線截面圖（b)為。 如上述，於第2圖所示之發光元件用基板1中，除了已 形成有金屬層8之區域以外，係與前述第1圖所示之發光元 18 201233265 件用基板1相同。因此，以下，將僅就金屬層8予以說明。 於第2圖所示之發光元件用基板1中，金屬層8係被設置 為於減低發光元件用基板之翹曲的同時兼具著反射層之機 能。金屬層8 ’係包含於凹部4之底面24上，除了於該底面 24之已配設有前述一對元件連接端子5的部分及其周圍附 近以外的區域’再者金屬層8之端緣係有一部分跨過凹部底 面24的外周A而配置於框體3與基體2之間，且以未達基體2 之外緣的方式配設成略正方形。另外，所謂「除了前述元 件連接端子5的周圍附近以外的區域」係與已於前述第1圖 所示之發光元件用基板1中所說明之區域相同。 金屬層8之外緣的形狀係與從上方看基體2之形狀為已 設為中心相同之約略相似之形狀(略正方形），且構成金屬層 8之外緣的各邊與構成基體2之外緣的各邊係位在各為相互 平行的關係之位置上。而且’如第2圖所示之金屬層8，其於 凹部4之底面24之略圓形的外周A的4處，係以預定之長度跨 過外周，且其端緣係被以及於框體3與基體2之間的方式形 成。 此處，金屬層8跨過凹部4之底面24之外周A的比率，係 相對於外周全長(b)’前述金屬層8所跨4處之外周長度(於第 2圖中，以al、a2、a3及a4表示）之合計的百分率（(al + a2 + a3 + a4)/b><100) ’以40%以上為宜，60%以上較佳。另外，特 別理想的，係如第1圖所示般跨1〇〇%(即全部跨過）的情形。 金屬層8的形狀，只要金屬層8跨凹部4之底面24之外周 的比率成為前述範圍般的形狀的話則無受特別限制。如前 19 201233265 述般藉令金屬層8的形狀為略正方形，則無須過於詳細考慮 積層偏離或印刷偏離的事宜，且以能令金屬層8跨外周的比 率為前述範圍的點而理想。另一方面，若以略正方形的形 狀，且跨底面24之外周的比率成為1〇〇%的方式形成金屬層 8，則在減低翹曲的點上，雖能與第丨圖所示之已形成了略 圓形的金厲層時獲得同樣的效果，但因存在於基體2與框體 3之間的金屬層的面積增加，對基體2與框體3之間的黏著性 而言則不理想。 如所述般於設計金屬層8時，係按照發光元件用基板本 身或製造上所要求的特性，例如：基體2與框體3之間的黏 著性、發光元件用基板1之翹曲、及製造容易性等，來適當 地調整金屬層的形狀、跨底面24之外周所形成的比率、I 形成於基體2與框體3之間的金屬層的面積等。具體而言亦 可為多角形之金屬層的形狀。另外，為略正方形以外的η多 角形時，相對於外周全長(b)，前述金屬層8所跨之處之外= 長度合計的百分率，係按照該多角形的邊之數量來計算j 例如，為η多角形時，相對於該n多角形之外周全長作），寸 述金屬層所跨之η多角形之外周各邊長之長度合計（即，2 外周之各邊為cl、C2、C3、C4 .......cnB主 ,, 7 cn時，ci + c2 + c3 + c4……+cn的合計）的百分率（(cl + C2 + c3 + c4...... + cn)/bxl00)係以40%以上為宜，60%以上較佳。 以上，已就本發明之發光元件用基板之實施形態予以 說明，但舉例而言，使用於前述第丨圖所示之發光元件用美 板1，藉由於其搭載部22搭載發光二極體元件等之發光元^ 20 201233265 11，則可製作例如於第3圖所示之發光裝置1〇。 如第3圖所示，本發明之發光裝置10，其構造為：在發 光元件用基板1所具有之位於凹部4之底面24略中央的搭載 部22上，利用矽酮固晶劑等之固晶劑來搭載發光二極體元 件等之發光元件11，且透過接合引線12將其無圖示之一對 電極個別與一對元件連接端子5連接。發光裝置1〇，更以於 凹部4之底面24 ’以一邊覆蓋著經以前述方式配設之發光元 件11或接合引線12，同時並以充填凹部4之方式設有密封層 13。另外，對於構成密封層13之材料（密封材”亦可按照所 需含有通常用於發光裝置之密封層中的磷光體。 本發明之發光元件用基板丨係具有凹部並於其底面搭 載有發光兀件’且基板本身翹曲的比率係已受減低者，而 如所述之本發明之發光裝置1 〇係藉由該發光元件用基板 卜來減低發光元件位置偏離或傾斜，且為光之方向性與設 計不同等的問題、或因接合⑽的位置偏離所致之斷線的 發生等的問題已党抑制者。又，更可於將該發光裝置1〇焊 錫安裝於印刷電路板時，減低以基板之㈣為原因所發生 之斷線和熱性惡化等的問題。如所述之本發明之發光裝 置，係可適於作為例如行動電話、個人電腦或平面電視之 液晶顯示器等的背光源、汽車或裝飾用的照明、一般照明 及其他的光源來使用。 以上，雖就本發明之發光元件用基板及使用其之發光 裝置之實施形態^以舉例說明，但本發明之發光元件用基 板及發光裝置麵限於該等者。在*違反本發明之主旨之 21 201233265 限度内’或依所需，可適當地變更其構成。 以下，就本發明之發光元件用基板之製 圖所示之發光元件用基板i為例來加以說明。第;，以第1 發光元件用基祀，舉例而言係可藉由包圖所不之 方法來製造· B U 製造 方法來Ik.⑷生胚片製作步驟、（B)糊層形 積層步驟及⑼燒成步驟。另夕卜，對於用於製造之構二) 賦予與完成品之構件同一符號來說明。 ’、 用生胚片，係同以「2」的符號來標示，又，元2與基體 子與元件連接用端子導體糊層，則係同 α接用^ 示，其他亦同。 5」的符號來標 (Α)生胚片製作步驟 (Α)步驟’係製作使用包含玻璃粉末與陶聽末之玻璃 陶竞組成物(LTCC組成物）來構成發光元件用基板之基體的 基體用生胚>12 '及構成框體之框體用生胚片3的步驟。具 體而言，基體用生胚片2及框體用生胚片3，係可在以下說 明之包含玻璃粉末與喊粉末之麵陶纽成物中添加黏 、、’。知1並依所@添加可塑劑、分散劑、溶劑等後調製成聚 體’並利用刮刀法等’以使該毁體燒錢之職膜厚呈 刚述所品之範圍内的方式來成形為預定之形狀、膜厚的片 狀，並使之乾燥來製作。 對於基體用生胚片2’係使前述所獲得之片狀成形物歷 經(B)糊層形成步驟後，供至(C)步驟中之積層。而就框體用 生胚片3，則係在此步驟中，於前述所獲得之片狀成形物的 中央部，，利用通常之方法以形成為凹部4之底面Μ的形狀 22 201233265 (例如，圓形）地形成貫通孔後’將所獲得者供至(c)步驟中 之積層。 (玻璃陶瓷組成物及漿體之調製） 用於前述玻璃陶瓷組成物的玻璃粉末，雖未必受到限 制，但玻璃轉移點(Tg)係以550°C以上且7〇〇。(：以下為宜。玻 璃轉移點(Tg)小於550°C時，有脫脂變得困難之虞，而大於 700°C時，則有收縮開始溫度會變高，尺寸精度降低之虞。 又，在經以800°C以上且930°C以下燒成時以析出結晶 為宜。無結晶析出時’有無法獲得充分的機械強度之虞。 進而言之，透過DTA(微差熱分析）所測定之結晶化尖峰溫度 (Tc)係以880°C以下為宜。結晶化尖峰溫度（Tc)大於880°C 時，則有尺寸精度降低之虞。 作為如所述之玻璃粉末的玻璃組成，舉例而言，以下 述氧化物換算表示’則以含有：57mol%以上且65mol%以下 之Si02、13Π10115/。以上且 18mol%以下之b2〇3、9mol%以上且 23mol%以下之CaO、3mol%以上且8mol%以下之Α12〇3，且 選自於Κ20及Na2〇中之至少一種的合計係〇 5m〇i%以上且 6m〇l°/〇以下者為宜。藉此’使提升所獲得之基體及框體表 面的平坦度變得容易。 此處，Si〇2 ’為玻璃之網狀成型物^ si02的含量小於 57mol°/〇時，則難以獲得穩定的玻璃，且化學耐久性亦有降 低之虞。另一方面，Si02的含量大於65mol%時，則有玻璃 溶融溫度或玻璃轉移點(Tg)變得過高之虞。Si02的含量，係 宜為5 8mol%以上’較佳係59mol%以上’特別理想的則係 23 201233265 60mol°/。以上。又，Si02的含量，係宜為64m〇i%以下，較佳 係63 mol%以下。 Ββ3，為玻璃之網狀成型物。b2〇3的含量小於13m〇1% 時，則有玻璃熔融溫度或玻璃轉移點（Tg)變得過高之虞。 另一方面，B2〇3的含量大於i8m〇i%時，則有難以獲得穩定 的玻璃，且化學耐久性亦有降低之虞。b2〇3的含量，係宜 為14mol%以上，較佳係15mol%以上。又，IQ;的含量，係 且為17mol%以下’較佳係igmol%以下。[Technical Field] The present invention relates to a substrate for a light-emitting element and a light-emitting device using the same. BACKGROUND OF THE INVENTION The wiring board for mounting a light-emitting element such as a light-emitting diode element is constituted by a structure in which a wiring conductor layer is disposed on the surface or inside of an insulating substrate. A typical example of the read wiring board is an insulating substrate made of oxidized ceramics (hereinafter referred to as an alumina substrate). A recessed portion for accommodating the light-emitting element is formed on the upper portion of the oxidized substrate, and a plurality of wiring conductor layers ′ composed of high-melting-point metal powder such as tungsten or molybdenum are disposed on the surface and inside thereof, and the wiring conductor layer is disposed on the surface and inside thereof. It is electrically connected to the light-emitting element housed in the recess. As described above, a wiring board on which a light-emitting element is mounted (hereinafter sometimes referred to as a substrate for a light-emitting element or a substrate only) has a function of rapidly dissipating heat generated by the light-emitting element or illuminating It is often the case that the light emitted from the element is reflected as far forward as possible, and a metal layer is provided for purposes other than electrical connection. In addition, as a substrate for a light-emitting element, a low-temperature co-fired ceramic (Low Temperature Co) is proposed in addition to an alumina substrate because of low-temperature firing, low dielectric constant, and high electrical conductivity of copper and silver wiring. -fired Ceramics. Hereinafter, it is represented by LTCC.) Insulation base 201233265 The substrate for a light-emitting element having a concave portion is generally a flat-shaped green sheet which is formed by laminating at least the bottom surface of the concave portion. It can be produced by a laminate of a green matrix precursor (which may be referred to as a ceramic frame precursor) which is a ceramic substrate precursor having a through hole in the wall portion of the recess. At this time, the wiring conductor layer is formed on the surface or inside of each green sheet before or after the green sheet laminate is formed before firing the green sheet laminate, and is simultaneously fired when the green sheet is fired. The ceramic substrate precursor and the ceramic frame precursor may be formed in a single layer or may be formed in a plurality of layers. Here, in the substrate for a light-emitting element having a concave portion manufactured in this manner, stress concentration due to firing shrinkage or the like occurs during the above-described manufacturing process, and the obtained flat ceramic substrate constituting the bottom surface of the concave portion of the substrate is produced. The central part will warp the problem. When the light-emitting element is mounted on the substrate, the light-emitting element is mounted on the substrate, and the position of the light-emitting element or the position of the bonding wire is deviated, and the light-emitting element is mounted in an inclined state to affect the light. The directionality and other aspects of the problem. Further, when the substrate is mounted on a printed circuit board or the like by soldering, a gap may occur between the substrate and the solder due to warping of the back surface side of the substrate, which may cause disconnection or hinder heat dissipation. Etc. In order to solve the problem of the warpage of the substrate for a light-emitting element having the concave portion, the patent document 1 discloses a flat-shaped ceramic recording body constituting the bottom surface of the concave portion or a shinging member having a cross-section forming a concave portion wall portion. In the vicinity of the interface between the two, a method of forming a layer composed of shouting materials different from the shrinkage of the ceramics and the other materials constituting the other knives is used. Further, in Patent Document 2 and Patent Document 3, a flat ceramic substrate constituting a bottom surface of a concave portion is formed by laminating a plurality of green sheets, and the plurality of green sheets are contained on the bottom surface corresponding to the concave portion. a part of the green sheet having the thickness of the through hole, thereby suppressing the distortion of the central portion (the bottom surface of the concave portion), and further forming the concave portion, and filling the concave portion in the flat plate shape The surface of the ceramic substrate is formed entirely or partially on the surface of the ceramic substrate, thereby flattening the bottom surface of the recess. CITATION LIST Patent Literature Patent Literature 1: JP-A-2007-281108 (Patent Document 2) Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. 2010-186881. SUMMARY OF THE INVENTION The present invention has been made in order to solve the problem of warpage of a substrate for a light-emitting element having a concave portion, and to provide a substrate for a light-emitting element having a concave portion in which the amount of warpage of the entire substrate has been reduced, And it is intended to use a highly reliable light-emitting device such as a directionality or an electrical connection. Means for Solving the Problem A substrate for a light-emitting element according to the present invention includes: a substrate which is formed of a dielectric material of a second insulating material and has a plate shape; and a frame body; = bonded to the upper side of the substrate The main surface is composed of a second inorganic insulating material, and has a light-emitting element 201233265 on the bottom surface of the concave portion formed by the side surface of the upper main surface of the base body and the front inner wall surface of the front body. The mounting portion of the light-emitting element has a metal layer on a bottom surface of the concave portion, and the metal layer is disposed between the frame and the substrate at least partially across the outer periphery of the bottom surface of the concave portion. The method of the external rim is configured. In the substrate for a light-emitting element of the present invention, the metal layer is disposed between the frame and the substrate over the entire circumference of the bottom surface of the concave portion. Further, the total length of the outer circumference of the portion of the metal layer which is disposed across the outer circumference of the bottom surface of the concave portion is preferably 40% or more with respect to the entire outer circumference of the concave portion bottom surface. Further, the distance (L) from the outer periphery of the bottom surface of the concave portion to the edge of the metal layer between the frame and the substrate is preferably 1 〇〇 to 200 μm. The "~" indicating the above numerical range is used as the meaning including the lower limit and the upper limit unless otherwise specified. Hereinafter, the "~" in the present specification is the same. Meaning to use. In the substrate for a light-emitting element of the present invention, the metal layer has a function of reducing the warpage of the entire substrate by being provided as described above, and the metal layer can also be electrically connected to the electrode of the light-emitting member, for example. The connected components connect the terminals or the heat dissipation layer, and the reflective layer or the underlayer for forming the reflective layer. At this time, the metal layer is disposed between the frame and the substrate across the outer periphery of the bottom surface of the recess. Further, it is preferable to provide a metal layer as a reflective layer which is relatively freely selectable as an arrangement shape, or as a bottom layer for forming a reflective layer. Further, in the substrate for a light-emitting element of the present invention, the first inorganic insulating material and the second inorganic insulating material which individually form the substrate and the frame are all a glass ceramic composition containing a glass powder and a ceramic powder. 201233265 It is a good thing to form a metal with a silver as a domain. Further, in the substrate for a light-emitting device of the present invention, the second inorganic insulating material and the second inorganic insulating material (four) are both a sintered product of the oxide composition and the metal layer constituting the metal layer is selected from the group consisting of It is preferable to use a metal as a main component in the group of the crane and the _. Further, in the metal layer selected from the group consisting of at least one type of group towel composed of a crane and a ray, it is preferable to form a metal reflective layer having a saki as a main component. The light-emitting device of the present invention includes the substrate for a light-emitting element of the present invention and a light-emitting element mounted on the substrate for a light-emitting element. [Effect of the invention] The substrate for a light-emitting element in which the amount of the total amount of the substrate of the substrate is reduced in the substrate for the light-emitting element. Further, according to the present invention, the light-emitting element is mounted on the substrate for the light-emitting element, and the light-emitting device having a high cost is provided. (4) Temple Ί 图 图 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 。 。 。 。 。 。 。 。 。 。 。 ’ ’ ’ ’ ’ (2) and (8) are drawings showing a different example of the embodiment of the substrate for a light-emitting element of the present invention, wherein (4) is a plan view and (b) is a cross-sectional view. Fig. 3 (a) and (b) show the use of a base surface diagram of a light-emitting element shown in Fig. 1 . The figure is a plan view, and (8) is 201233265 H 3^ Ji. Embodiments of the present invention will be described below with reference to the drawings. Further, the present invention is not limited to the following description. The substrate for a light-emitting element of the present invention has a base body which is formed of a first inorganic insulating material and has a flat main surface; and a frame body which is bonded to the upper main surface of the substrate and which is second And a bottom surface of the concave portion formed on the bottom surface of the base main surface and having the inner wall surface of the frame as a side surface, and having a light-emitting portion; the light-emitting element; The substrate is characterized in that the concave bottom surface has a metal layer which is disposed at least partially over the outer periphery of the concave portion and disposed between the frame and the substrate, and is disposed not to reach the outer edge of the base Set up. In the present specification, the "substrate having a flat surface in the main surface" means that the upper side and the lower side are all formed as a flat surface having a flat surface to a degree of visibility, and the following is a "slightly flat shape". The "base" means that the upper and lower main faces are a base body composed of a flat surface as described above. & The following is a description of "slightly", as long as there is no detailed relationship between the degree of visibility and the level of awareness as described. In the case of a substrate for a light-emitting element having a concave portion and having a light-emitting element 2 on the bottom surface thereof, the substrate for the light-emitting element is placed over the outer periphery of the bottom surface of the concave portion, and the frame of the wall surface is formed. The amount of warpage of the (four)-element substrate 201233265 can be reduced by the gold system disposed on the bottom surface of the phase-receiving portion, and the ratio of the warpage of the central warp can be reduced. Thereby, the bottom surface of the concave portion is flattened, and the positional deviation or inclination of the light-emitting element when the light-emitting element is mounted is reduced, and the problem that the directivity of the light is different from the design or the positional deviation of the bonding wire can be suppressed. The occurrence of the line. Further, when the substrate for a light-emitting element is mounted on a printed circuit board or the like by using solder, the problem of disconnection or deterioration in heat dissipation due to warpage of the substrate can be reduced. In the substrate for a light-emitting element of the present invention, generally, when a component connection terminal or a heat dissipation layer, a reflective layer, or a bottom layer for forming a reflective layer provided on the bottom surface of the concave portion is disposed, as long as a part thereof can span the bottom surface of the concave portion In the case of the outer peripheral mode, the metal layer for reducing the warpage of the entire substrate is not necessarily provided separately. That is, in the present invention, generally, the metal layer for reducing warpage is a part of the connection terminal, the heat dissipation layer, the reflection layer or the reflection layer which is disposed so as to straddle the outer periphery of the bottom surface of the concave portion. The bottom layer of the layer is formed. Further, it is preferable that the reflective layer or the reflective layer for forming the metal layer as the arrangement shape is used as the bottom layer for forming the reflective layer. In the present invention, when the metal film field metal layer disposed on the bottom surface of the concave portion for reducing the warpage of the substrate is used as a layer constituting the reflective layer, the metal layer having a large reflection may be the metal layer in the present invention. Further, when the metal layer is used as a layer constituting the underlayer, the metal layer of the underlayer may also be the metal layer in the present invention. In addition, as the first inorganic insulating material and the second inorganic insulating material constituting the base body and the casing, for example, alumina sinter 201233265 (aluminum oxide ceramic) or aluminum nitride sinter, aluminum-rich, may be mentioned. A sinter sintered product and a sintered body containing a glass ceramic composition of a glass powder and a ceramic powder (hereinafter, referred to as LTCC (Low Temperature Co-fired)). Because of the different firing temperatures of these ceramics, the base and frame systems are usually made of the same type of ceramic. In the present invention, as the first and second inorganic insulating materials, LTCC is preferable from the viewpoints of easiness of production, ease of processing, economy, and the like. In addition, within the limits of the first and second inorganic insulating materials, for example, in the case of LTCC, a glass ceramic composition capable of obtaining high resistance strength is applied to the substrate, and the frame body is applied. Like the diffuse reflective glass-ceramic composition, the raw material composition of the glass powder and the ceramic powder may be different depending on the required properties of the substrate and the frame. When LTCC is selected as the inorganic insulating material, a metal layer containing silver as a main component (for example, a metal layer or an alloy layer containing 95% by mass or more of silver) is used as a low-temperature baking. The metal layer is preferably used as a reflective layer to design a substrate for a light-emitting element. Further, when a high-temperature co-fired ceramic such as alumina ceramic is selected as the inorganic insulating material, a metal layer composed of a high-melting-point metal is selected as the metal layer because high-temperature baking is required, and the high-melting-point metal is selected from the group consisting of At least one of the high melting point metals composed of tungsten and molybdenum is used as a main component. In order to reduce the warpage of the substrate, the high-melting-point metal layer is insufficient in function as a reflective layer. Usually, after the firing, a reflective layer using a metal having good reflectivity such as silver is formed at a high melting point. On the metal layer. When the high-melting-point metal layer as described above is used, the high-melting-point metal layer is designed to function as a bottom layer. 201233265 The base and the frame of the first and second inorganic insulating materials which are individually made of ltcc Further, the substrate for a light-emitting element which is designed to have a metal layer as a reflection layer is described as an example of a base form for a light-emitting element of the present invention. (4) in the first drawing of Fig. 1 is a plan view showing the light-emitting element for mounting the i-shaped light-emitting elements of the present invention as shown in the (8) X-X line cross-sectional view. (9) The substrate 1 for a light-emitting element according to (4) has a light-emitting element on which a substantially square substrate having a substantially square shape as seen from above is provided: = degree ^ on the opposite side in this example The face is made to the back 23. The thick phase of the substrate 2 is unrestricted (4) and can be made the same as the wiring substrate. The hair is sent to the Yoshida A4c1, and the shovel is used to form the frame 3, and the frame 3 is formed. The central portion of the concave portion 4 of the frame 3 has a slightly circular portion as the bottom surface 24 The peripheral portion of the main surface 21 of the base body. In addition, this = 1 = 25, the inner side of the flavor body 3 __. The light-emitting element recess is mounted on the slightly central portion of the recessed bottom surface 24 of the ^^ piece. The side surface 25' of the P4 is formed such that its main body 3 is slightly perpendicular to the bottom surface thereof, and is formed into the same shape as the upper and lower openings, and is joined to the (four) crucible peripheral portion. The shape of the frame 3 can also be shaped as desired. 1 σ upper side opening portion is large, and the lower side opening portion is small, and the specific value of the distance between the inverted surface 25 of the M and the edge of the light-emitting element mounting portion 22 is 201233265. The output or the size (size) of the element may vary, and may vary depending on the type of the monument, the content, the conversion efficiency, and the like of the sealing layer to be described later, but for example, The distance that the light emitted by the light is most efficiently emitted toward the light extraction direction is used as an index. Further, the height of the side surface 25 of the concave portion 4, that is, the distance from the bottom surface 24 of the concave portion 4 to the highest position of the frame 3 (that is, the height of the frame 3) can be derived from the light-emitting element to be mounted. If the light is sufficiently reflected in the direction in which the light is taken out, it is not particularly limited. Specifically, depending on the design of the light-emitting device, for example, the output of the light-emitting element to be mounted or the distance from the edge of the light-emitting element mounting portion may be different, but the shape of the product on which the light-emitting device is mounted or efficiently From the viewpoint of filling a sealing member or the like containing a light-filling material for converting a wavelength, it is preferable that the height of the highest portion of the light-emitting element when the light-emitting element is mounted is higher than 100 to 500 μm. Further, the height of the frame 3 is preferably such that the height of the highest portion of the light-emitting parts is more than or equal to the height of 450 μη1, and more preferably the height of 400 μηι or less. The base 2 and the frame 3 in this example are all composed of LTCC. The LTCC material constituting the base 2 is, for example, a bending strength of the base 2 and the frame 3 formed by the LTCC material from the viewpoint of mounting the light-emitting element and suppressing damage during use. It is better to use 25〇Mpa or more. On the other hand, the LTCC material constituting the frame 3 is preferably the same as the material constituting the substrate 2 in consideration of the adhesion to the substrate 2. Further, in accordance with the required characteristics of the light-emitting device, a LTCC material having diffuse reflectivity may be used as the LTCC material. With diffuse reflectivity 12 201233265 Go, item 1 To improve the efficiency of light extraction in the illuminating device, the second is not particularly limited. The ideal system can be used to obtain the equivalent of silver reflection extraction efficiency. Further, the value of the haze = a Z e measured by JIS K7105 is used as an index for evaluating the diffuse reflectance, and the value is preferably 95% or more, 98. /. The above is preferred. In addition, the (four) composition, the sintering conditions, and the like of the sintered body of the glass powder containing the glass powder and the ceramic powder of the ceramic body 2 and the frame 3, which will be described later, will be described later. In the substrate 丨 for a light-emitting element, a component connection terminal that is electrically connected to a pair of electrodes of the light-emitting element is provided on the bottom surface 24 of the recess formed by a part of the main surface of the substrate 2, which is attached to The light-emitting element: the peripheral portion of the carrier P22, specifically, the two sides, and a pair of ones are provided in a relatively rectangular shape in a facing manner. At the back surface 23 of the base 2, a pair of P-connects & 6 are electrically connected to an external circuit, and a pair of through-the-piece connection terminals 5 and external connection terminals 6 are electrically connected to the inside of the base 2. Conductor 7. The component connection terminal 5, the external connection terminal 6, and the through conductor 7 are arranged as long as they are electrically connected via the path of the light-emitting element s element connection terminal 5 - the through-conductor 7 - the external circuit of the external connection terminal 4 The position or the shape of the I is not limited by the one shown in Fig. 1, and can be appropriately adjusted. These components are connected to the terminal 5, the external connection terminal 6, and the through-conductor 7 (hereinafter, referred to as "wiring conductor" in some cases), and are used for the light-emitting element. The same constituent material 'for the wiring conductor of the substrate' can be used as the constituent material 13 201233265 of the wiring conductor, and specifically, copper, silver, and (iv) can be used as the metal material in the division. Among such metal materials, a metal material composed of silver, silver, and platinum, or a metal material composed of pure phase is suitable for use. Further, a conductive protective layer which protects the layer from oxidation or vulcanization and has conductivity on the metal layer of the metal connection material and preferably the thickness Μ in the component connection terminal 5 or the external connection terminal 6 (not shown) is preferably a structure formed by coating the entire end edge thereof. The conductive protective layer is not particularly limited as long as it is composed of a conductive material having a function of protecting the metal layer. Specifically, a conductive protective layer composed of key recording, chrome plating, forged silver, nickel/silver, gold, gold, gold, or the like can be cited. In the present invention, as the conductive protective layer covering and protecting the element connection terminal 5 and the external connection terminal 6, for example, a bonding wire which can be connected to an electrode of a light-emitting element which will be described later or In terms of good bonding or the like with other joining materials, it is preferred to use a mineral metal layer having a gold layer at least in the outermost layer. Although the conductive layer may be formed only by the gold layer, it is preferable to form a bond/gold layer by subtracting gold on the layer. At this time, the film thickness of the electrical protective layer is preferably 2 to 20 μm, and the gold plating layer is preferably hawthorn ~ 丨〇μηι. In the substrate for a light-emitting element of the present invention, the metal layer 8 for reducing the warpage and the metal layer 8 having the function of the reflective layer in the present embodiment t are included on the bottom surface 24 of the recess 4 except for the bottom surface. 24 is provided with a portion of the pair of element connection terminals 5 and a region other than the vicinity thereof; and an end edge thereof is disposed between the frame 3 and the base 2 across the outer circumference of the bottom surface 24 of the recess, and 201233265 The outer edge of the base body 2 is disposed in a manner. Here, the term "except for the portion where the component connection terminal 5 is already distributed and the vicinity of the vicinity thereof" means that the component connection terminal 5 and the metal layer 8 are considered to be electrically insulated, and further consideration is given to The deterioration of the insulation due to the poor condition of the manufacturing surface at the time of lamination or the position at the time of printing, or the region where the conductivity of the element connection terminal 5 does not occur is hindered; The region on the outer side of the edge of the edge ΙΟΟμηη is preferably a region outside the end edge of 150 μm or more. As shown in Fig. 1, in the substrate 1 for a light-emitting element, the metal layer 8 has a shape similar to the center of the bottom surface 24 of the concave portion 4 (slightly circular " and is surrounded by the outer periphery of the bottom surface 24. Here. The edge is formed into a substantially circular shape. The distance L from the outer periphery of the bottom surface 24 of the recessed portion 4 to the edge of the metal layer 8 is such that the glare of the substrate for the light-emitting element is sufficiently reduced, and the frame 3 and the frame 3 are The bonding of the base 2 has a sufficient adhesive strength to be appropriately selected. In other words, when the substrate 1 for a light-emitting element is manufactured, the deviation of the arrangement position of the metal layer 8 (printing deviation) or the frame 3 and the substrate 2 are considered. When the laminate is deviated or the like, the distance L from the outer periphery of the bottom surface 24 of the recessed portion 4 to the edge of the metal layer 8 is preferably 1 to 200 μm, and preferably 130 to 70 μm. In the substrate 丨 for a light-emitting element, the metal layer 8 is formed so that the end edge thereof spans the entire outer periphery of the bottom surface 24 of the recess 4 and between the substrate 2 and the frame 3, but FIG. 2 will be described later. As in the example shown, the metal layer 8 can also have its end edge across the bottom surface 24 as desired. In the present example, the metal layer 8 is disposed as a reflective layer, so that it is disposed as large as possible on the bottom surface of the recess 4 as much as possible, but 15 201233265: (2) In the case where the metal layer can be disposed under the light reflection performance, the metal layer can be appropriately smashed by the viewpoint of reducing the charm of the substrate 1 for light-emitting. =! The base 2 is burned early and has a deformation resistance during firing = 1 = the force is not particularly limited. However, in the first figure, the A substrate 1 is the domain layer 8 A metal material constituting the metal layer 8 is a metal material having a metal layer 8 as a main component (for example, a metal material containing 95% by mass or more of silver). The metal material, specifically, may be a metal material of _, silver, and white, or a metal material composed of silver money = a metal material composed of silver and platinum, or a structure of silver and material. The material of the second material 'specifically, relative to the total amount of the metal material, the ratio is The metal material of 5 mass% or less is exemplified, and the metal layer 8 composed of silver in the middle of the present invention can be obtained by the high reverse in the present invention. For example, it is preferably 5 to Μμπι, and preferably 8 to 12. When the film thickness of the metal layer 8 is less than 5 μm, there is a possibility that sufficient degree or light reflectivity cannot be obtained, and if it is larger than 15 μm, it is not only economical. The upper side is unfavorable. At the same time, deformation due to thermal expansion of the substrate 2 or the frame 3 occurs during the manufacturing process, and the sound of the substrate warpage is not sufficiently achieved, and the light-emitting element shown in Fig. 1 The substrate 1 is a protective film glass layer 9 having an insulating varnish metal layer 8. The protective film glass layer 9 is formed on the metal layer 8 which has been formed on the bottom surface 24 of the recess 4 of 201233265, and the substrate 2 and the frame 3 The portion other than the portion is formed so as to cover the entire edge including the metal layer 8. Here, as long as the insulation of the element connection terminal 5 and the metal layer 8 provided on the bottom surface 24 of the recess is ensured, the edge of the protective film glass layer 9 may be in contact with the component connection terminal 5, but consideration is given. The occurrence of a problem in the manufacturing surface at the time of lamination or the positional deviation at the time of printing is preferably 75 μm or more, and more preferably ΐ〇〇μηη or more. In the portion where the edge of the metal layer 8 is covered by the protective film glass layer 9, the distance between the edge of the metal layer 8 and the edge of the protective film glass layer 9 is sufficient to protect the metal layer 8 from the outside. The range under the aging deterioration factor is preferably as short as possible. Specifically, it is preferably from 1 〇 to 5 〇 μπι, preferably from 20 to 30 μm. When the distance is less than i〇pm, the metal material constituting the metal layer 8, particularly the metal material containing silver as a main component, may be oxidized or vulcanized due to the exposure of the metal layer 8. When the light reflectivity is lowered, if it is larger than 5 〇 μη, as a result, the area of the region where the metal layer 8 is disposed is reduced, and the light reflectivity is lowered. The film thickness of the protective film glass layer 9 varies depending on the design of the light-emitting device. However, if sufficient insulation protection function is to be ensured, and the manufacturing cost and the deformation due to the difference in thermal expansion from the substrate are considered, ~5〇μηι is suitable. Further, it is preferable that the surface of the protective film glass layer 9 has surface smoothness in order to obtain sufficient heat dissipation properties at least in the light-emitting element mounting portion 22. Specifically, in terms of surface smoothness, the surface roughness ruler 3 is preferably 〇〇3μηι or less as 17 201233265, and Ο.ΟΙμηι or less, from the viewpoint of easiness of manufacture. Preferably. Further, the raw material composition of the glass constituting the protective film glass layer will be described in a production method to be described later. Further, in the substrate 1 for a light-emitting element shown in Fig. 1, the protective film glass layer 9 does not cover the metal layer 8 formed between the substrate 2 and the frame 3, but the effect of the present invention is not impaired. The metal layer 8 formed between the base 2 and the frame 3 may be formed in a limit as needed. Although not shown in the first drawing, in the substrate 1 for a light-emitting element, in order to reduce the thermal resistance, a heat dissipation through hole may be buried in a direction perpendicular to the main surface 21 of the substrate 2 in the base 2, or may be parallel. A heat dissipation layer is disposed in the direction of the main surface 21. The heat dissipation through hole is, for example, a columnar shape smaller than the mounting portion 22, and is provided in a plurality directly below the mounting portion 22. When the heat dissipation through hole is provided, it is preferably provided in the vicinity of the back surface 23 to the main surface 21 so as not to reach the main surface 21 of the base 2. By arranging the arrangement as described above, it is possible to increase the flatness of the mounting surface 22, reduce the thermal resistance, and suppress the tilt when the light-emitting element is mounted. Next, the substrate for a light-emitting element which is designed in the same manner as the substrate for a light-emitting element shown in FIG. 1 is described as a substrate for a light-emitting element of the present invention, except that the region in which the metal layer is formed is different. An example of a form. 2 is a plan view (a) showing another example of the substrate 1 for a light-emitting element which is different from the substrate 1 for a light-emitting element of the first embodiment in which one light-emitting element is mounted in the embodiment of the present invention, and The cross-sectional view (b) of the Χ line is . As described above, the substrate 1 for a light-emitting element shown in Fig. 2 is the same as the substrate 1 for the light-emitting element 18 201233265 shown in Fig. 1 except for the region in which the metal layer 8 is formed. Therefore, only the metal layer 8 will be described below. In the substrate 1 for a light-emitting element shown in Fig. 2, the metal layer 8 is provided to reduce the warpage of the substrate for a light-emitting element and to function as a reflection layer. The metal layer 8' is included on the bottom surface 24 of the recess 4 except for the portion of the bottom surface 24 where the pair of element connection terminals 5 are disposed and the vicinity of the vicinity thereof, and the edge of the metal layer 8 is further A portion is disposed between the frame 3 and the base 2 across the outer periphery A of the bottom surface 24 of the recess, and is disposed in a substantially square shape so as not to reach the outer edge of the base 2. In addition, the "region other than the vicinity of the periphery of the component connecting terminal 5" is the same as the region described in the substrate 1 for a light-emitting element shown in Fig. 1 described above. The outer edge of the metal layer 8 has a shape similar to that of the base 2 which is approximately the same shape (slightly square) which is set to be the same as the center, and the sides constituting the outer edge of the metal layer 8 and the base 2 are formed. Each side of the rim is positioned at a position that is in a mutually parallel relationship. Further, 'the metal layer 8 as shown in Fig. 2 is at the four sides of the slightly circular outer circumference A of the bottom surface 24 of the recess 4, and spans the outer circumference with a predetermined length, and the end edge thereof is attached to the frame. 3 is formed in a manner between the substrate 2. Here, the ratio of the metal layer 8 across the outer circumference A of the bottom surface 24 of the recess 4 is the length of the outer circumference of the metal layer 8 across the entire length (b) of the outer circumference (in the second figure, in the a, a2 , a3 and a4 represent the total percentage ((al + a2 + a3 + a4)/b><100) ' is preferably 40% or more, and more preferably 60% or more. Further, it is particularly desirable to have a situation of 1% (i.e., all spanned) as shown in Fig. 1. The shape of the metal layer 8 is not particularly limited as long as the ratio of the outer periphery of the metal layer 8 across the bottom surface 24 of the recess 4 is a shape as described above. As described in the above-mentioned 19 201233265, the shape of the metal layer 8 is slightly square, and it is not necessary to consider the problem of lamination deviation or printing deviation in too much detail, and it is preferable that the ratio of the metal layer 8 across the outer circumference is the same as the above range. On the other hand, if the metal layer 8 is formed in a slightly square shape and the ratio of the outer circumference of the bottom surface 24 is 1%, the position of the warpage can be reduced as shown in the figure. The same effect is obtained when a slightly circular gold layer is formed, but the area of the metal layer existing between the substrate 2 and the frame 3 is increased, and the adhesion between the substrate 2 and the frame 3 is not ideal. When the metal layer 8 is designed as described above, the substrate itself or the characteristics required for the manufacture of the light-emitting element, for example, the adhesion between the substrate 2 and the frame 3, the warpage of the substrate 1 for the light-emitting element, and The ease of manufacture or the like is appropriately adjusted to the shape of the metal layer, the ratio formed around the outer periphery of the bottom surface 24, the area of the metal layer formed between the substrate 2 and the frame 3, and the like. Specifically, it may also be a shape of a polygonal metal layer. Further, in the case of an η polygon other than a square, the percentage of the total length of the outer side of the outer circumference (b) of the outer layer (b) is calculated according to the number of sides of the polygon, for example, In the case of η polygon, relative to the entire circumference of the n-polygon, the length of each side of the η polygon spanned by the metal layer is total (ie, the sides of the 2 outer circumference are cl, C2, C3) , C4 .......cnB main, 7 cn, ci + c2 + c3 + c4 ... + cn total) percentage ((cl + C2 + c3 + c4... + cn ) / bxl00 ) is preferably 40% or more, and more preferably 60% or more. In the above, the embodiment of the substrate for a light-emitting element of the present invention has been described. However, for example, the light-emitting element sheet 1 shown in the above-mentioned first embodiment is used, and the light-emitting diode element is mounted on the mounting portion 22. For example, in the illuminating element ^ 20 201233265 11, the illuminating device 1 例如 shown in Fig. 3 can be produced. As shown in Fig. 3, the light-emitting device 10 of the present invention is configured such that it is fixed on the mounting portion 22 located at the center of the bottom surface 24 of the concave portion 4 of the substrate 1 for a light-emitting element by using an fluorene-based solid-state agent or the like. The light-emitting element 11 such as a light-emitting diode element is mounted on the crystallizing agent, and the pair of electrodes, which are not shown, are individually connected to the pair of element connection terminals 5 through the bonding wires 12. In the light-emitting device 1A, the light-emitting element 11 or the bonding lead 12 disposed as described above is covered on one side of the bottom surface 24' of the concave portion 4, and the sealing layer 13 is provided to fill the concave portion 4. In addition, the material (sealing material) constituting the sealing layer 13 may contain a phosphor which is usually used in a sealing layer of a light-emitting device. The substrate for a light-emitting element of the present invention has a concave portion and is provided with light on the bottom surface thereof. The ratio of the warpage of the element 'and the substrate itself has been reduced, and the light-emitting device 1 of the present invention as described above reduces the positional deviation or tilt of the light-emitting element by the substrate for the light-emitting element, and is light The problem of the difference in directionality and design, or the occurrence of disconnection due to the positional deviation of the joint (10) has been suppressed by the party. Moreover, when the illuminating device 1 〇 solder is mounted on the printed circuit board, The problem of disconnection and thermal deterioration caused by the substrate (4) is reduced. The illuminating device of the present invention as described above can be suitably used as a backlight for a liquid crystal display such as a mobile phone, a personal computer or a flat-panel television. In the above, the substrate for a light-emitting element of the present invention and the light-emitting device using the same are used. The present invention is exemplified, but the substrate for a light-emitting element and the light-emitting device of the present invention are limited to these. Within the limits of 21 201233265, which violates the gist of the present invention, the configuration may be appropriately changed as needed. The substrate i for a light-emitting element shown in the drawing of the substrate for a light-emitting device of the present invention will be described as an example. First, the first substrate for a light-emitting element can be exemplified by a method of packaging. Manufacturing and BU manufacturing methods include Ik. (4) green sheet forming step, (B) paste layer forming step, and (9) firing step. Further, for the manufacturing process 2), the same symbol as that of the finished product is given. Explanation: ', the raw embryonic piece is marked with the symbol "2", and the element 2 and the base body and the terminal conductor paste layer for connection with the element are used in conjunction with α, and the others are the same. The symbol of the 5" mark (Α) raw sheet production step (Α) step is to fabricate a substrate using a glass ceramic powder and a ceramic glass composition (LTCC composition) to form a substrate for a substrate for a light-emitting element. The step of using the green embryo > 12 ' and the frame 3 for forming the frame body. Specifically, the green sheet 2 for the base body and the green sheet 3 for the frame body can be adhered to the surface layer containing the glass powder and the shout powder as described below. Knowing 1 and adding plasticizers, dispersants, solvents, etc., and then preparing them into a polymer, and using a doctor blade method, etc., so that the film thickness of the ruined body is formed within the range of the product. It is made into a sheet shape of a predetermined shape and a film thickness, and it is made to dry. The substrate-formed green sheet 2' is subjected to the (B) paste layer forming step after the sheet-like formed article obtained, and is supplied to the layered layer in the step (C). In the step, the green sheet 3 for the frame body is formed in the central portion of the sheet-like formed article obtained in the above-described manner by the usual method to form the shape 22 of the bottom surface of the concave portion 4 201233265 (for example, After the through holes are formed in a circular shape, the obtained one is supplied to the laminate in the step (c). (Preparation of glass ceramic composition and slurry) The glass powder used for the glass ceramic composition described above is not necessarily limited, but the glass transition point (Tg) is 550 ° C or more and 7 Å. (The following is preferable. When the glass transition point (Tg) is less than 550 °C, degreasing becomes difficult, and when it is more than 700 °C, the shrinkage start temperature becomes high and the dimensional accuracy is lowered. It is preferable to precipitate crystals when it is fired at 800 ° C or more and 930 ° C or less. When there is no crystal precipitation, "there is a possibility that sufficient mechanical strength cannot be obtained. In other words, it is measured by DTA (differential thermal analysis). The crystallization peak temperature (Tc) is preferably 880 ° C or less. When the crystallization peak temperature (Tc) is more than 880 ° C, the dimensional accuracy is lowered. As the glass composition of the glass powder as described, for example, In the case of the following oxides, it is represented by: 57 mol% or more and 65 mol% or less of SiO 2 , 13 Π 10115 / or more and 18 mol % or less of b2 〇 3, 9 mol% or more and 23 mol% or less of CaO, and 3 mol% or more. And 8 mol% or less of Α12〇3, and is selected from the total of at least one of Κ20 and Na2〇, and is preferably 5 m〇i% or more and 6 m〇l°/〇 or less. The flatness of the surface of the substrate and the frame becomes easy. Here, Si〇2' is a mesh of glass. When the content of the molded product ^ si02 is less than 57 mol ° / 〇, it is difficult to obtain a stable glass, and the chemical durability is also lowered. On the other hand, when the content of SiO 2 is more than 65 mol %, there is a glass melting temperature or glass transfer. The point (Tg) becomes too high. The content of SiO 2 is preferably 58 mol% or more and preferably 59 mol% or more. Particularly, it is 23 201233265 60 mol ° /. or more, the content of SiO 2 is It is preferably 64 m〇i% or less, preferably 63 mol% or less. Ββ3 is a mesh molding of glass. When the content of b2〇3 is less than 13 m〇1%, there is a glass melting temperature or a glass transition point (Tg). On the other hand, when the content of B2〇3 is more than i8m〇i%, it is difficult to obtain stable glass and the chemical durability is also lowered. The content of b2〇3 is preferably 14 mol% or more, preferably 15 mol% or more. Further, the content of IQ; is 17 mol% or less, preferably igmol% or less.

Al2〇3 ’係被添加用以提高玻璃之穩定性、化學耐久性 及強度。Al2〇3的含量小於3m〇i%時，有玻璃變得不穩定之 虞。另一方面，Α〗2〇3的含量大於。時，則有玻璃熔融 溫度或玻璃轉移點(Tg)變得過高之虞^八12〇3的含量，係宜 為4mol%以上，較佳S5m〇i%以上。又，八丨2〇3的含量，係 宜為7mol%以下’較佳係6m〇i%以下。Al2〇3' is added to improve the stability, chemical durability and strength of the glass. When the content of Al2〇3 is less than 3 m〇i%, there is a possibility that the glass becomes unstable. On the other hand, the content of Α 〇 2 〇 3 is greater than. In the case where the glass melting temperature or the glass transition point (Tg) becomes too high, the content of 八^812〇3 is preferably 4 mol% or more, preferably S5 m〇i% or more. Further, the content of gossip 2〇3 is preferably 7 mol% or less and preferably 6 m〇i% or less.

CaO，係被添加用以提高玻璃之穩定性或結晶之析出 性，同時亦使玻璃熔融溫度或玻璃轉移點(丁g)降低。當Ca〇 的含量小於9mol%時，有玻璃熔融溫度變得過高之虞。另 一方面’ CaO的含量大於23mol%時，則有玻璃變得不穩定 之虞。CaO的含量，係宜為pmoi%以上，較佳係13m〇i%以 上’特別理想的則係14mol%以上。又，CaO的含量，係宜 為22mol%以下，較佳係2im〇i。/。以下，特別理想的則係 20mol%以下。 κ20及Na20 ’係被添加用以使玻璃轉移點（Tg)降低。 K2〇及Nae之經合計的含量小於〇 5mol%時，有玻璃熔融溫 24 201233265 度或玻璃轉移點(Tg)變得過高之虞。另一方面，κ20及Na2〇 之經合計的含量大於6mol%時，則化學耐久性、特別是而子 酸性有降低之虞，且電氣絕緣性亦會有降低之虞。κ2〇及 NaaO之經合計的含量，係以〇.8mol%以上且5mol%以下為佳。 另外，玻璃粉末，未必受限於僅由前述成分所構成者， 在滿足玻璃轉移點（Tg)等之諸特性之範圍内可含有其他成 分。含有其他成分時，其經合計之含量係以1 〇 mol%以下為宜。 玻璃粉末，係以使成為如前述之玻璃組成的方式，將 玻璃原料利用熔融法來製造玻璃，並藉由利用乾磨法或濕 磨法研磨而取得。濕磨法時宜使用水作為溶劑。而研磨係 使用例如輥磨機、球磨機、噴射磨機等之研磨機來進行。 玻璃粉末之50%粒徑（Dsq)係以〇.5μπι以上且2μηι以下為 宜。玻璃粉末之50%粒徑小於〇·5μηι時，則玻璃粉末會容易 聚集而使處理變得困難，同時亦會使平均地分散變得困 難。另一方面’玻璃粉末之50%粒徑大於2μιη時，則有發生 玻璃軟化溫度上升或燒結不足之虞。粒徑之調整，舉例而 吕係於研磨後依需要利用分級來進行。另外，本說明書中， 粒fe係指透過利用雷射繞射散射法之粒徑測定裝置所獲得 之值。 另一方面，作為陶瓷粉末，用於習知之LTCC基板之製 ^者可無特別限制地使用’舉例而言如氧化銘粉末、氧化 結粉末、或氧化鋁粉末與氧化锆粉末的混合物可適於使 用。又’於本發明中製造依需要所使用之具有漫散反射性 之LTCC時’係以氧化鋁粉末與氧化锆粉末的混合物宜於用 25 201233265 來作為前述陶瓷粉末。作為氧化鋁粉末與氧化锆粉末的混 合物，以質量比計氧化鋁粉末：氧化锆粉末之混合比例係 以90 : 10〜60 : 40的混合物為宜。陶瓷粉末之50°/。粒徑 (D5〇)，舉列而言，前述所有狀況皆係以0.5μηι以上且4μηι以 下為宜。 將如所述之玻璃粉末與陶瓷粉末，藉由以使成為例如 玻璃粉末係30質量％以上且50質量％以下、且陶瓷粉末係 50%質量以上且70質量％以下的方式予以摻混、混合來獲得 玻璃陶瓷組成物。 於該玻璃陶瓷組成物中藉由添加黏結劑，並依所需添 加可塑劑、分散劑、溶劑等來製得漿體。作為黏結劑，宜 使用例如聚乙烯丁醛、丙烯酸樹脂等。而可塑劑則使用例 如鄰苯二甲酸二丁酯、鄰苯二曱酸二辛酯及鄰苯二曱酸丁 苄酯等。又，作為溶劑，宜使用例如曱苯、二甲苯、2-丙 醇及2-丁醇等之有機溶劑。 (Β)糊層形成步驟 在(Β)步驟中，對前述已製得之基體用生胚片2，依序 以（Β-1)配線導體用糊層形成步驟、（Β-2)金屬層用糊層形成 步驟及(Β-3)保護膜玻璃糊層形成步驟來形成各糊層。 (Β-1)配線導體用糊層形成步驟 對於基體用生胚片2，首先，使用導體糊形成配線導體 用糊層（元件連接端子用糊層5、外部連接端子用糊層6及貫 通導體用糊層7)。具體而言，係為了於基體用生胚片2之前 述預定位置上配設一對貫通導體7,而製作由主面21貫通至 26 201233265 ^面23之—對貫軌，並以充填該貫通孔的方式形成貫通 體用糊層7。又，以包覆貫通導體用糊層7的方式，在主面 21上形成略長方形之元件連接端子用糊層5 ,同時並在背面 23形成與貫通導體用糊層7電氣連接之外部連接端子用糊層 6 〇 作為用於配線導體用糊層之形成的導體糊，可使用例 女於以銅、銀、金等為主成分之金屬粉末中添加乙基纖維 …專的載劑，並依所需添加溶劑等經作成糊狀者。另外， 上述金屬粉末係宜於使用由銀所構成的金屬粉末、銀與白 金所構成的金屬粉末及銀與鈀所構成的金屬粉末。 作為元件連接端子用糊層5、外部連接端子用糊層6及 貫通導體用糊層7的形成方法，可舉利用網印法來塗布、充 填前述導體糊的方法為例。所形成之元件連接端子用糊層5 及外部連接端子用糊層6的膜厚，係調整成為最後所獲得之 元件連接子及外部連接端子的膜厚為前述預定的膜厚。 (B-2)金屬層用糊層形成步驟 前述基體用生胚片2之主面21上之除了已形成有元件 連接端子用糊層5的部分及其周圍附近之外，於前述預定位 置上形成金屬層用糊層8。金屬層用糊層8，係以使於燒成 後其外側之端緣位在較凹部4之底面2 4之外周更外側的方 式’宜單側在1〇〇〜2〇〇μιη外側，較佳係在丨3〇〜ΐ7〇μπι外 側，與凹部4之底面24之外周以相似的形狀來形成。金屬層 用糊層8的膜厚’係調整成為最後所獲得之金屬層的膜厚為 前述預定的膜厚。 27 201233265 此處，第2圖所示之發光元件用基板、與第1圖所示之 發光元件用基板的相異之處，僅金屬層用糊層8之外側端緣 的形狀而已。於第2圖所示之發光元件用基板中，金屬層用 糊層8之外側的端緣’係與基體用生胚片2之主面21的形狀 相似之略正方形，且於燒成後，其端緣至少有一部分係以 跨過凹部4之底面24之外周的方式形成，即金屬層用糊層8 係宜以跨底面24之全外周中合計長度為4〇%以上，較佳係 跨60°/。以上的方式形成。第2圖所示之發光元件用基板，除 了形成金屬層用糊層時之形狀以外，亦可與第丨圖所示之發 光元件用基板以完全相同的方式製作。 作為金屬層用糊，係可使用前述已說明之含有以銀為 主成分之金屬材料中添加乙基纖維素等的載劑並依所需 添加溶劑等經作成糊狀者。 (B-3)保護膜玻璃糊層形成步驟 接著，在基體用生胚片2之主面21上，以包覆含有形成 =成為凹部4之底面24的部分中之金屬層用糊層8之端緣的 全體且以將已形成有元件連接端子用糊層5的部分及其周 圍附近除外的方式，形成保護膜玻璃糊層9。 保遵膜玻軸’係可使詩賴粉末(保龍玻璃層用 2粉末）中，添加乙基纖維素等的載劑，並依所需添加溶 射經作成糊狀者。所形成之保護膜_糊層9之膜厚，係 膜厚成最後所獲彳于之保護膜破璃層9的膜厚為前述所需的 作為保護膜破璃層用的破璃粉末，只要為能透過以下 28 201233265 之(D)燒成步驟中之燒成能獲得膜狀的玻璃者即可，其50% 粒徑（D5〇)係以〇.5μιη以上且2μηι以下為宜。又，保護膜玻璃 層9的表面粗糙度Ra之調整’舉例而言係可透過調整該保護 膜玻璃層用之玻璃粉末的粒度來進行。即，作為保護膜玻 璃層用玻璃粉末，在燒成時會充分熔融且流動性優異，並 於前述50%粒徑(Dm)之範圍内能調整表面粗糙度Ra為前述 理想的範圍。 (C) 積層步驟 在於前述(B)步驟中已獲得之已形成有各種糊層之基 體用生胚片2上’積層已於前述(A)步驟中製作之框體用生 胚片3，來製得未燒結之發光元件用基板1。 (D) 燒成步驟 於上述(C)步驟之後，就已獲得之未燒結之發光元件用 基板1，依視所需進行用以去除黏結劑等之脫脂，並進行使 玻璃陶瓷組成物等燒結之燒成(燒成溫度：800〜930。〇。 脫脂’舉例而言係可藉由在5〇〇°C以上且600。(：以下的 溫度中’保持1小時以上且1〇小時以下來進行。脫脂溫度小 於500°C或脫脂時間未滿1小時的時候，有無法充分去除黏 結劑等之虞。另一方面，若令脫脂溫度為600它左右，且脫 脂時間為10小時左右的話，則能充分去除黏結劑等，而若 超出該條件的話反而有生產性等降低之虞。 又，燒成，係可以考慮基體2及框體3之緻密構造的獲 得及生產性’在8〇〇〜930°C的溫度範圍内適當地調整時間 來進行。具體而言，係以85〇t以上且900°C以下的溫度， 29 201233265 保持20分鐘以上且60分鐘以下為宜，而以於860°C以上且 880°C以下的溫度進行特別理想。燒成溫度小於800°c時， 則有無法獲得為緻密之構造的基體2及框體3之虞。另一方 面，燒成溫度若大於930°C，則有基體變形等之生產性等降 低之虞。又’使用了含有以銀為主成分之金屬粉末的金屬 糊來作為前述配線導體用之導體糊或金屬層用糊時，若燒成 溫度大於8 8 0 °C，則有因過度軟化而無法維持預定形狀之虞。 以如所述之方式，雖未燒結之發光元件用基板丨被燒成 即可獲得發光元件用基板1，但於燒成後，可依所需以包覆 元件連接端子5及外部連接端子6之全體的方式，各予以配 設於前述已說明之鍍鎳、鍍鉻、鍍銀、鍍鎳/銀、鍍金、及 鍍鎳/金等之通常在發光元件用基板中，用於導體保護用之 導電性保護層。而於該等之中，又以鍍鎳/金適宜使用，舉 例而言鍍鎳層係使用胺基磺酸鎳浴等，而鍍金層則使用氰 化金鋰浴等，可個別透過電鍛來形成。 以上’針對本發明之發光元件用基板之實施形態的一 例’就其製造方法予以說明，但基體用生胚片2、框體用生 胚片3等’未必須由單一的生胚片所構成，亦可為經積層數 片之生胚片者。又，對於各部之形成順序等，亦可於發光 元件用基板之可製造之限度内適當地做變更。 另外，本發明之發光元件用基板，通常係以一次能製 造數個的方式來製作連結基板或大尺寸的基板，亦可藉由 將之經由分割的步驟以製作一個個發光元件用基板的方法 來製作。此時，分割的時機，只要係在前述燒成後且於搭 201233265 載發光元件之前亦可，而亦可在發光元件搭載後且被焊接 固定·安裝於印刷電路板等之前。 使用了 LTCC作為無機絕緣材料之本發明之發光元件用 基板，以上已就其製造方法及發光裝置予以說明，而以下將 簡單地就無機絕緣材料使用了氧化鋁陶瓷時之本發明之發 光元件用基板的實施形態之構成及製造方法予以說明。 舉例而言，將與第1圖所示之使用了LTCC的發光元件 用基板1相同的發光元件用基板，使用氧化鋁陶瓷來製作 時，如已說明過的，作為用以減低發光元件用基板全體之 翹曲而裝設的前述金屬層，其一部分係被配設於基體與框 體之間。因而，因其必須與氡化鋁陶瓷共燒，故選擇由選 自於由鎢及錮所構成之群組之高熔點金屬的至少一種作為 主成分的高熔點金屬所構成者。在此，由前述高熔點金屬 之至少一種作為主成分之高熔點金屬所構成的金屬層，係 指含有此類高’魅金屬（此處之聽點金屬係亦包含前述 咼炫點金屬的合金)9〇%以上的金屬層。 此處，於第1圖所示之發光元件用基板1中，金屬層8係 由> 可低溫燒成之以銀為主成分之金屬材料所構成，且發揮 著作為反射層的機能，而另—方面，使用了氧化紹陶曼之 發光兀件用基板的情形則為··與以銀為主成分之金屬材料 的層搭配使用之前述由鶴及_等所構成的金屬層因未呈有 充分的光反雜，故㈣之金屬層，通常餘設計為於燒 成後發揮作為用以於其切成使用了㈣反射性良好的金 屬之反射層的底層的作用。 31 201233265 因而，使用了氧化銘陶瓷之發光元件用基板之構成， 舉例而言，與示於第1圖之發元件用基板1相比，係於保護 膜玻璃層9與金屬層8之間开)成銀等的反射層，且進而各構件 之構成材料具體而言除了無機絕緣材料、金屬材料等各替換 為氧化鋁陶瓷、高熔點金屬之外，可與示於第1圖之發元件 用基板1的構成相同。另外，對於在由鎢、鉬所構成之金屬 層的上層形成使用了銀等之反射性良好的金屬的反射層（銀 反射層）時，銀反射層係無形成於跨凹部4之底面24的外周而 及於基體2與框體3之間的情形。又，保護膜玻璃層9 ,係依 需要而形成者，而依發光元件用基板之設計亦有未形成的情 形。 又，如所述之使用了氧化鋁陶瓷之發光元件用基板， 舉例而言係可用以下之方式來製造。 (A')生胚片製作步驟 使用以氧化鋁作為主成分的氧化鋁陶瓷用組成物，來 替代包含玻璃粉末與陶瓷粉末的玻璃陶瓷組成物(LTCC用 組成物），並經施予與前述(A)生胚片製作步驟相同的步驟， 而獲得基體用生胚片2及框體用生胚片3。另外，作為以氧 化鋁為主成分的氧化鋁陶瓷用組成物，其中與製作氧化鋁 陶曼時通常使用的為相同之氧化鋁陶瓷用組成物則可無特 別限制地使用。 (B')配線導體用糊層及金屬用糊層形成步驟 使用了氧化紹陶瓷的發光元件用基板的時候，作為構 成配線導體層或用以減低翹曲之金屬層（以作為反射層的 32 201233265 底層來發揮機能）等之金屬層的金屬材料係使用如前述之 以鎢或钼等之南溶點金屬作為主成分的金屬材料。即製 乍鶴或1目等之南炫點金屬作為主成分的高而ί熱配線導體 用糊及金屬層用糊，來替代前述之使用了以銀為主成分的 導體用糊及金屬層用糊，並經施予與前述⑻配線導體用糊 層及金屬用糊層形成步驟相同的步驟。以此方式，於前述 ()步驟中已製知之基體用生胜片2上，形成配線導體用糊 層及金屬層用糊層。 (C')積層步驟 τ< &予與W述(C)積層同樣的步驟，獲得未燒結之發光 元件用基板1。 (D')燒成步驟 於上述(C)步驟之後’就已製得之未燒結的發光元件用 基板卜依所需進行用以去除純劑等之脫脂，並進行用以 使氧化紹陶兗用組成物等燒結之燒成（燒成溫度：14〇〇〜 1700C)。脫脂，舉例而言，係以在2〇〇艽以上且5〇〇。〇以下 的μ度中，保持約丨小時以上且1〇小時以下的條件為宜。而 k成舉例而言，則以在1400。〇以上且1700。(：以下的溫度 中，保持數個小時的條件為宜。但是，於加熱時，特別是 在燒成時為了不使導體氧化，必須在已保持在還原氣體環 扰(例如，氫氣體環境）中、或惰性氣體環境中、或為真空中 之非氧化性氣體環境下來進行加熱。 以如所述方式，未燒結之發光元件用基板丨燒成後可獲 得發光元件用基板1，而於已形成作為反射層之底層的金屬 33 201233265 層8的表面上’利用搭配網印法、濺鍍沈積法或噴墨塗布法 等之方法’來形成以反射性佳之銀等作為主成分的反射 層進而再以包覆該反射層全體的方式，按照所需，例如 形成與則述使用了 LTCC之發光元件用基板1相同的保護膜 玻璃層9 〇又，也， 對於元件連接端子5及外部連接端子6，亦可CaO is added to improve the stability of the glass or the precipitation of crystals, and also to lower the glass melting temperature or the glass transition point (dg). When the content of Ca 小于 is less than 9 mol%, there is a case where the glass melting temperature becomes too high. On the other hand, when the content of CaO is more than 23 mol%, the glass becomes unstable. The content of CaO is preferably pmoi% or more, preferably 13 m〇i% or more, and particularly preferably 14 mol% or more. Further, the content of CaO is preferably 22 mol% or less, preferably 2 im 〇 i. /. Hereinafter, it is particularly preferably 20 mol% or less. Κ20 and Na20' are added to lower the glass transition point (Tg). When the total content of K2〇 and Nae is less than 〇5 mol%, there is a glass melting temperature of 24 201233265 degrees or a glass transition point (Tg) becomes too high. On the other hand, when the total content of κ20 and Na2〇 is more than 6 mol%, the chemical durability, particularly the acidity, is lowered, and the electrical insulating properties are also lowered. The total content of κ 2 〇 and NaaO is preferably 8% by mole or more and 5 % by mole or less. Further, the glass powder is not necessarily limited to those composed only of the above-mentioned components, and may contain other components within a range satisfying characteristics such as a glass transition point (Tg). When other components are contained, the total content is preferably 1 〇 mol% or less. The glass powder is obtained by a method in which a glass raw material is produced by a melting method so as to have a glass composition as described above, and is obtained by a dry grinding method or a wet grinding method. Water is preferred as the solvent for the wet milling process. The polishing is carried out using a grinding machine such as a roll mill, a ball mill, or a jet mill. The 50% particle diameter (Dsq) of the glass powder is preferably μ.5 μπι or more and 2 μηι or less. When the 50% particle diameter of the glass powder is less than 〇·5 μηι, the glass powder tends to aggregate and the handling becomes difficult, and the average dispersion becomes difficult. On the other hand, when the 50% particle diameter of the glass powder is more than 2 μm, there is a possibility that the glass softening temperature rises or the sintering is insufficient. The adjustment of the particle size is exemplified by the classification after the grinding. In the present specification, the particle "fe" refers to a value obtained by a particle diameter measuring device using a laser diffraction scattering method. On the other hand, as the ceramic powder, the manufacturer of the conventional LTCC substrate can be used without particular limitation, for example, such as an oxidized powder, an oxidized powder, or a mixture of an alumina powder and a zirconia powder. use. Further, in the present invention, when a LTCC having diffuse reflectance as required is used, a mixture of alumina powder and zirconia powder is preferably used as the ceramic powder of 25 201233265. As a mixture of the alumina powder and the zirconia powder, the mixing ratio of the alumina powder: zirconia powder in a mass ratio is preferably a mixture of 90:10 to 60:40. 50 ° / ceramic powder. The particle size (D5 〇), in all cases, is preferably 0.5 μηη or more and 4 μηι or less. The glass powder and the ceramic powder are blended and mixed in such a manner that the glass powder is, for example, 30% by mass or more and 50% by mass or less, and the ceramic powder is 50% by mass or more and 70% by mass or less. To obtain a glass ceramic composition. A slurry is prepared in the glass ceramic composition by adding a binder and adding a plasticizer, a dispersant, a solvent, and the like as needed. As the binder, for example, polyvinyl butyral, acrylic resin or the like is preferably used. For the plasticizer, for example, dibutyl phthalate, dioctyl phthalate and butyl benzyl phthalate are used. Further, as the solvent, an organic solvent such as toluene, xylene, 2-propanol or 2-butanol is preferably used. (Β) Paste layer forming step In the (Β) step, the raw green sheet 2 for the above-mentioned substrate is sequentially formed by a (Β-1) wiring conductor paste layer forming step, (Β-2) metal layer Each paste layer is formed by a paste layer forming step and a (Β-3) protective film glass paste layer forming step. (Β-1) Step of forming a paste layer for a wiring conductor First, a green sheet for a base conductor is used to form a paste layer for a wiring conductor (a paste layer for a component connection terminal 5, a paste layer 6 for an external connection terminal, and a through conductor). Use paste layer 7). Specifically, in order to arrange a pair of through conductors 7 at the predetermined positions of the base body green sheets 2, a through-track is formed from the main surface 21 to the 26 201233265 surface 23, and the through-track is filled. The through-hole paste layer 7 is formed in the form of a hole. In addition, a substantially rectangular element connection terminal paste layer 5 is formed on the main surface 21 so as to cover the through-conductor paste layer 7, and an external connection terminal electrically connected to the through-conductor paste layer 7 is formed on the back surface 23 The paste layer 6 〇 is used as a conductor paste for forming a paste layer for a wiring conductor, and a special carrier can be added to a metal powder containing copper, silver, gold or the like as a main component, and It is necessary to add a solvent or the like to make a paste. Further, the metal powder is preferably a metal powder composed of silver, a metal powder composed of silver and platinum, and a metal powder composed of silver and palladium. As a method of forming the element connection terminal paste layer 5, the external connection terminal paste layer 6, and the through conductor paste layer 7, a method of applying and filling the conductor paste by a screen printing method is exemplified. The film thickness of the formed element connection terminal paste layer 5 and the external connection terminal paste layer 6 is adjusted so that the film thickness of the finally obtained element connector and external connection terminal is the predetermined film thickness. (B-2) Step of forming a paste layer for a metal layer, on the main surface 21 of the green sheet 2 for a substrate, in addition to the portion where the paste layer 5 for the element connection terminal has been formed and the vicinity thereof, at the predetermined position A paste layer 8 for a metal layer is formed. The metal layer paste layer 8 is such that the outer edge of the outer layer is more outward than the outer surface of the bottom surface 2 4 of the concave portion 4 after firing, and is preferably unilaterally on the outer side of 1 〇〇 to 2 〇〇 μιη. The outer layer is formed on the outer side of the 丨3〇~ΐ7〇μπι, and is formed in a similar shape to the outer circumference of the bottom surface 24 of the recess 4. The film thickness of the metal layer paste layer 8 is adjusted so that the film thickness of the finally obtained metal layer is the predetermined film thickness. 27 201233265 Here, the difference between the substrate for a light-emitting element shown in Fig. 2 and the substrate for a light-emitting element shown in Fig. 1 is only the shape of the outer edge of the paste layer 8 for the metal layer. In the substrate for a light-emitting element shown in FIG. 2, the edge of the outer side of the paste layer 8 for metal layer is slightly square like the shape of the main surface 21 of the green sheet 2 for the base, and after firing, At least a part of the end edge is formed so as to straddle the outer periphery of the bottom surface 24 of the recess 4, that is, the metal layer paste layer 8 is preferably a total length of 4% or more of the total outer circumference of the bottom surface 24, preferably a cross. 60°/. The above method is formed. The substrate for a light-emitting element shown in Fig. 2 can be produced in exactly the same manner as the substrate for a light-emitting device shown in Fig. 2, except for the shape in which the paste layer for a metal layer is formed. As the paste for the metal layer, a carrier containing ethyl cellulose or the like as a main component containing silver as described above may be used, and a paste or the like may be added as needed. (B-3) Step of Forming Protective Film Glass Paste Layer Next, on the main surface 21 of the base material green sheet 2, the paste layer 8 for metal layer in the portion including the bottom surface 24 which is formed as the concave portion 4 is coated. The protective film glass paste layer 9 is formed so as to exclude the entire portion of the end edge from the portion where the element connection terminal paste layer 5 has been formed and the vicinity thereof. The glass film of the film can be used to add a carrier such as ethyl cellulose to the Shi Lai powder (2 powder for the Baolong glass layer), and to add a solution as needed to form a paste. The film thickness of the protective film _ paste layer 9 formed, and the film thickness of the protective film glaze layer 9 which is finally obtained is the above-mentioned virgin powder for the protective film glazing layer, as long as In order to obtain the film-like glass by the firing in the (D) baking step of the following 2012, 2012, the sho, the 50% particle size (D5 〇) is preferably 〇5 μmη or more and 2 μηι or less. Further, the adjustment of the surface roughness Ra of the protective film glass layer 9 can be carried out by, for example, adjusting the particle size of the glass powder for the protective film glass layer. In other words, the glass powder for a protective film glass layer is sufficiently melted at the time of firing and has excellent fluidity, and the surface roughness Ra can be adjusted within the above-mentioned range of 50% particle diameter (Dm). (C) The step of laminating is to use the green sheet 3 for the frame which has been produced in the above step (A) on the green sheet 2 for the substrate which has been formed with the various paste layers obtained in the above step (B). An unsintered substrate 1 for a light-emitting element was obtained. (D) After the step (C), the unsintered substrate 1 for a light-emitting element obtained is subjected to degreasing for removing a binder or the like as required, and the glass ceramic composition or the like is sintered. The calcination (baking temperature: 800 to 930. 脱. Degreasing) can be carried out by, for example, 5 〇〇 ° C or more and 600 ° ((: the following temperatures are kept for 1 hour or more and 1 hour or less). When the degreasing temperature is less than 500 ° C or the degreasing time is less than 1 hour, the binder may not be sufficiently removed. On the other hand, if the degreasing temperature is about 600, and the degreasing time is about 10 hours, then the degreasing time is about 10 hours. It is possible to remove the binder and the like, and if it exceeds this condition, it is reduced in productivity, etc. Further, in the case of firing, the dense structure of the substrate 2 and the frame 3 can be considered to be obtained and the productivity is "at 8". The temperature is appropriately adjusted within a temperature range of 930 ° C. Specifically, it is a temperature of 85 〇t or more and 900 ° C or less, and 29 201233265 is preferably maintained for 20 minutes or more and 60 minutes or less, and is preferably 860°. Above C and below 880 ° C When the baking temperature is less than 800 ° C, the substrate 2 and the frame 3 having a dense structure cannot be obtained. On the other hand, if the firing temperature is more than 930 ° C, the substrate is deformed or the like. In the case of using a metal paste containing a metal powder containing silver as a metal paste for a wiring conductor or a paste for a metal layer, if the firing temperature is more than 880 ° C, In the case where the uncompressed substrate for the light-emitting element is fired, the substrate 1 for the light-emitting element can be obtained by excessive softening, but after the firing, the substrate 1 can be obtained after firing. It is necessary to arrange the nickel-plated, chrome-plated, silver-plated, nickel-plated/silver-plated, gold-plated, nickel-plated/gold-plated, etc., which are described above, so as to cover the entire connection of the terminal 5 and the external connection terminal 6. In the substrate for a light-emitting element, it is used for a conductive protective layer for conductor protection. Among them, nickel/gold plating is suitably used. For example, a nickel-based nickel sulfonate bath is used for the nickel plating layer. The gold-plated layer uses a gold cyanide bath, which can be individually permeable. The above description of the embodiment of the substrate for a light-emitting element of the present invention will be described. However, the substrate for the green sheet 2, the green sheet for the frame 3, etc. 'do not have to be single. It is also possible to make a raw sheet of a plurality of sheets, and it is also possible to appropriately change the order in which the respective parts are formed, etc., within the limits of the manufacture of the substrate for a light-emitting element. In the substrate for a light-emitting element of the invention, a connection substrate or a large-sized substrate is usually produced in a plurality of ways, and it is also possible to produce a substrate for a light-emitting element by dividing the steps. In this case, the timing of the division may be before the firing, and before the light-emitting element is placed on 201233265, or after the light-emitting element is mounted, before being soldered and mounted on a printed circuit board or the like. The substrate for a light-emitting device of the present invention using LTCC as an inorganic insulating material has been described above with respect to the method for producing the light-emitting device, and the light-emitting device of the present invention is used when an alumina ceramic is simply used as the inorganic insulating material. The configuration and manufacturing method of the embodiment of the substrate will be described. For example, when the substrate for a light-emitting element which is the same as the substrate 1 for a light-emitting element using LTCC shown in FIG. 1 is produced using alumina ceramics, as described above, the substrate for reducing the light-emitting element is used. A part of the metal layer installed in the entire warp is disposed between the base and the frame. Therefore, since it must be co-fired with the aluminum halide ceramic, a high melting point metal selected from at least one of the high melting point metals of the group consisting of tungsten and tantalum as a main component is selected. Here, the metal layer composed of at least one of the high melting point metals as the main component of the high melting point metal means a metal containing such a high metal (the alloy of the hearing point here also contains the aforementioned metal of the bright point metal) ) More than 9 % of the metal layer. Here, in the substrate 1 for a light-emitting element shown in Fig. 1, the metal layer 8 is composed of a metal material containing silver as a main component which can be fired at a low temperature, and functions as a reflective layer. On the other hand, in the case of using a substrate for a light-emitting element of oxidized sauermann, the metal layer composed of the above-mentioned crane and _ used in combination with a layer of a metal material containing silver as a main component is not present. There is sufficient light, so the metal layer of (4) is usually designed to function as a bottom layer for the use of a reflective layer of a metal having good reflectivity after being fired. 31 201233265 Therefore, the structure of the substrate for a light-emitting element using oxidized ceramics is, for example, opened between the protective film glass layer 9 and the metal layer 8 as compared with the substrate 1 for the element shown in Fig. 1 . The reflective layer of silver or the like, and the constituent materials of the respective members are specifically replaced with alumina ceramics and high melting point metals, respectively, in addition to inorganic insulating materials and metal materials, and can be used for the element shown in FIG. The configuration of the substrate 1 is the same. In addition, when a reflective layer (silver reflective layer) using a metal having good reflectivity such as silver is formed on the upper layer of the metal layer made of tungsten or molybdenum, the silver reflective layer is not formed on the bottom surface 24 of the recessed portion 4. The outer circumference is the same as the case between the base 2 and the frame 3. Further, the protective film glass layer 9 is formed as needed, and the design of the substrate for a light-emitting element may be unformed. Further, the substrate for a light-emitting element using alumina ceramic as described above can be produced, for example, in the following manner. (A') The green sheet forming step uses a composition for an alumina ceramic containing alumina as a main component instead of a glass ceramic composition (a composition for LTCC) containing a glass powder and a ceramic powder, and is administered as described above. (A) The steps of the green sheet forming step are the same, and the raw green sheet 2 for the substrate and the green sheet 3 for the frame are obtained. In addition, as a composition for an alumina ceramic containing aluminum oxide as a main component, a composition for an alumina ceramic which is generally used in the production of alumina ceramics can be used without particular limitation. (B') The wiring layer for the wiring conductor and the metal paste layer forming step are used as the wiring conductor layer or the metal layer for reducing warpage (for the reflective layer 32) when the substrate for the light-emitting element of the oxidized ceramic is used. 201233265 The metal material of the metal layer such as the bottom layer of the functional layer is a metal material containing a south melting point metal such as tungsten or molybdenum as a main component. In place of the above-mentioned paste for metal conductors and metal layers, which are mainly composed of silver, are used as a main component, such as a shovel or a shovel-like metal such as a shovel or a metal. The paste is applied in the same manner as the above-described (8) wiring conductor paste layer and metal paste layer forming step. In this manner, the paste for the wiring conductor and the paste layer for the metal layer are formed on the substrate for use in the substrate 2 which is known in the above step (). (C') Lamination Step τ <& The same procedure as in the layer (C) lamination is carried out to obtain an unsintered substrate 1 for a light-emitting element. (D') a calcination step is carried out after the above step (C), and the unsintered substrate for a light-emitting element which has been prepared is subjected to degreasing for removing a pure agent or the like, and is subjected to deoxidation. Sintering with a composition or the like (sintering temperature: 14 〇〇 to 1700 C). Degreasing, for example, is 2 〇〇艽 or more and 5 〇〇. It is preferable to maintain a condition of about 丨h or more and 1 〇h or less in the following μ degree. For example, k is at 1400. 〇 above and 1700. (In the following temperatures, it is preferable to maintain the conditions for several hours. However, in heating, especially in the case of firing, in order to prevent oxidation of the conductor, it is necessary to maintain the ring gas of the reducing gas (for example, a hydrogen gas atmosphere). Heating in a medium or an inert gas atmosphere or in a non-oxidizing gas atmosphere in a vacuum. As described above, the unsintered light-emitting element substrate is fired to obtain a substrate 1 for a light-emitting element. The metal 33 as the underlayer of the reflective layer is formed on the surface of the layer 8 on the surface of the layer 8 by a method such as a screen printing method, a sputtering deposition method, or an inkjet coating method to form a reflective layer having a reflective component such as silver or the like as a main component. Further, for example, the same protective film glass layer 9 as that of the light-emitting element substrate 1 using LTCC is formed as needed, and the component connection terminal 5 and the external connection terminal are also formed as needed. 6, can also

知J、所需’以包覆其全體的方式，配設與前述使用了LTCC 之發光元件用基板1相同的導電性保護層。 實施例 ’將說明本發明之實施例。另外，本發明非揭限 於此等實施者。 [實施例1] 使用以下說明之方法，製作了與第1圖所示之發光元件 用基板相同構造的發光元件用基板。另外 ，同前述，在燒 成之w後用於構件的符號係使用了相同者。 首先’製作了用以製作發光元件用基板1之基體2及框 體3的基體用生胚片2、框體用生胚片3。各生胚片以下述氧 化物換算’係以使成為Si02為60_4mol%、B2O3為15.6mol%、 Al2〇3 為 6mol%、CaO 為 15mol%、K20 為 lmol%及 Na2〇 為 2mol%之組成的玻璃的方式來摻混、混合原料，並將該原 料混合物放入白金坩堝使於1600°C下熔融60分鐘之後，將 該熔融狀態的玻璃倒出並經冷卻。利用氧化鋁製球磨機研 磨該玻璃40小時，製造出玻璃粉末。另外，研磨時之溶劑 係使用了乙醇。 藉由以使該玻璃粉末為35質量％、氧化鋁粉末（昭和電 34 201233265 工公司製，商品名稱：AL-45H)為40質量％、氧化鉛粉末（第 一稀元素化學工業公司製，商品名稱：HSY-3F-J)為25質量 的方式來摻混、混合而製造出玻璃陶瓷組成物。於該玻 璃陶瓷組成物50g中予以摻混、混合有機溶劑（將甲苯、二 甲苯、2-丙醇、2-丁醇經以質量比4:2:2: 1予以混合者）l5g、 可塑劑（苯二曱酸雙辛酯）2.5g、作為黏結劑的聚乙烯丁醛 (電氣化學工業公司（DENKA)製，商品名稱： PVK#3000K)5g、再加上分散劑（Byk公司製，商品名稱： BYK180)0.5g後調製成漿體。 利用刮刀法將該漿體塗布於PET膜上’並積層已使乾燥 之生胚片，製造出略為平板狀且燒成後之厚度成為0.5mm 的基體用生胚片2，及框外之形狀與基體用生胚片2相同， 且框内之形狀於燒成後為直徑4.2mm的略圓形且高度為 0.5mm的框體用生胚片3。另外，於本實施例中，係將發光 元件用基板1製造成多腔式連結基板，並於後述之燒成後分 割為一個個外形尺寸為5mmx5mm之略正方形的發光元件 用基板1。以下之記載，係就多腔式連結基板之中之於分割 後成為一個發光元件用基板1的一區劃予以說明。 另一方面’將導電性粉末(銀粉末，大研化學工業公司 製，商品名稱：S550)、作為載劑的乙基纖維素，以質量比 85 : 15的比例掺混，並將之經分散於作為溶劑之…萜品醇 中以使固體成分成為85質量％後，在磁器研蛛中進行捏合1 小時，進而再以三根軋輥進行3次分散而製造出配線導體用 糊。 35 201233265 又，金屬層用糊，係將銀粉末(大研化學工業公司製， 商品名稱：S400-2)與作為載劑的乙基纖維素，以質量比9〇 : 10的比例摻混，並將之經分散於作為溶劑之^萜品醇中以 使固體成分成為87質量％後，在磁器研缽令捏合丨小時進 而再經以三根軋輥進行3次分散來製造。 使用打孔機在相當於基體用生胚片2之一對貫通導體7 的部分形成直徑〇_3mm的貫通孔，並利用網印法充填前述 所獲得之配線導體用糊以形成貫通導體用糊層7，同時並於 背面23形成一對外部連接端子用糊層6。進而，利用網印法 以覆蓋貫通導體用糊層7的方式，形成略長方形的一對元件 連接端子5於基體用生胚片2的主面21上，而獲得了附配線 導體糊層基體用生胚片2。 接著’以將前述基體用生胚片2之主面21上之自元件連 接端子用糊層5之端緣起除了外側150μιη之範圍外的方 式，在中心與凹部4之底面24的中心相同，且於燒成後為直 徑4_5mm的圓形範圍内將已獲得之金屬層用糊予以網印形 成了金屬層用糊層8。另外，金屬層用糊層8的膜厚，係經 調整為使最後所獲得之金屬層的膜厚成為ΙΟμιη。 進而在前述基體用生胚片2之主面21上之自元件連接 端子用糊層5之端緣起除了外側1〇〇μηι之範圍外，包含金屬 層用糊層8之元件連接端子用糊層5之周邊的端緣，且於所 形成之範園係與凹部4之底面24為相同（即，燒成後直徑為 4.2mm)之圓形的範圍，將以下之保護膜玻璃糊予以網印而 形成了保護膜玻璃糊層9。另外’保護膜玻璃糊層9的膜厚， 36 201233265 係經調整為使最後所獲得之保護膜玻璃層的膜厚成為 30μιη。又’燒成後之保護膜玻璃層9的表面袓糖度Ra經由 東京精密公司製SURFCOM 1400D之測定係0 〇〇6μηι。 此處’用於保護膜玻璃糊之調製的保護膜玻璃層用玻 璃粉末係經如以下之方式製造。首先’以使成為以氧化物 換算係Si〇2為81.6mol%、Β2Ο3為 16.6mol%、|^2〇為 ^ 8m〇i% 之組成的玻璃的方式來換混、混合原料，並將該原料、昆人 物放入白金坩堝使於1600°C下熔融60分鐘之後，將該,溶融 狀態的玻璃倒出並經冷卻。利用氧化鋁製球磨機研磨該玻 璃8〜60小時，以作為保護膜玻璃層用玻璃粉末。 以使該保護膜玻璃層用玻璃粉末為60質量％、且樹脂 成分（以質量比85: 15的比例含有乙基纖維素與α—莊品醇者) 為40質量％的方式經摻混後，在磁器研缽中捏合丨小時，進 而再以三根軋輥進行3次分散調製出保護臈破璃糊。 於前述已製得之附各種糊層基體用生胚片2的主面21 上積層前述所製得的框體用生胚片3,即製得未燒結之多腔 式連結基板。在刖述已製付之未燒成的多腔式連*士美板 上，以使未燒結的發光元件用基板1之各區劃於燒成後外形 尺寸成為5mmx5mm的方式劃入分割用的切割線後，以 55〇°C保持5小時進行脫脂，進而再以870。(：保持30分鐘進行 燒成，製造出多腔式連結基板。將所獲得之多腔式連結基 板沿著分割線分割’即製造出發光元件用基板1。 於所獲得之發光元件用基板1中，令框體3之内壁面為 側面25且令基體主面21之一部分為底面24的凹部4，就其底 37 201233265 面24的形狀而言係直徑為4.2晒的圓形。又金屬層8，係 以跨底面24㈣之全長_%)的方切成於基體2與框體3 之間，且以大致均等地深人15〇帅的方式形成。另外，凹 部4的側面25係以對底面24略為垂聽形成絲體之内壁 面之霧度值經以霧度計（日本電色1公司製，NDH麵) 測定為100%。 就已獲知之發光兀件用基板丨，經利用東京精密公司製 SURFC0M 14嶋測定勉曲後，得知發光元件用基㈤之背 面23的最低位置（兩端）與最高位置（略中央部分）的高度差 係ΙΟμηι。又，就已獲得之發光元件用基板丨，經利用多用 途黏結強度試驗機SS-30WD(西進商事公司製）測定基體2與 框體3的接合強度’為>4〇N/mm2(於基體2與框體3界面中無 剝離）。結果示於表1。 [實施例2〜4] 製作除了在具有與第2圖所示之發光元件用基板相同 的略正方开>的金屬層8以外，係完全與前述實施例1中之發 光元件用基板相同的發光元件用基板1。 於實施例2中，已形成有金屬層8之部分其外側的形 狀’係於燒成後成為邊長3.5mm的略正方形。又，於實施 例2之發光元件用基板1中，金屬層8跨凹部4之底面24之外 周的比率’相對於外周全長係43%。採用與前述實施例！相 同的方式’測疋了發光元件用基板1的趣曲、基體2與框體3 的接合強度。結果示於表1。 於貫施例2中，除了將金屬層8的大小變更為表丨所示的 38 201233265 大小以外，係採用完全與實施例2相同的方式製作了實施例 3、實施例4的發光元件用基板1。於實施例3、實施例4中， 金屬層8跨凹部4之底面24之外周的比率’相對於外周全長 各為53%及70%。就該等之發光元件用基板1，係採用與前 述實施例1相同的方式，測定了發光元件用基板1的翹曲、 基體2與框體3的接合強度。結果示於表1。 [比較例] 除了於前述實施例1中’將金屬層8形成為與凹部4之底 面24完全相同之直徑4.2mm的圓形，且金屬層8完全未跨底 面24的外周以外，係採用與實施例1完全相同的方式製作出 比較例的發光元件用基板1。就已獲得之發光元件用基板i 採用與前述實施例1相同的方式，測定了發光元件用基板i 之翹曲、基體2與框體3的接合強度。結果示於表i。 [表1] (金尺屬寸?外側形狀 跨底面外周 的比率 勉曲 (um、 基體與框體 之接合強膚It is to be noted that the same conductive protective layer as that of the substrate 1 for a light-emitting element using the LTCC described above is disposed so as to cover the entire portion. EXAMPLES Examples of the invention will be described. Further, the present invention is not limited to such implementers. [Example 1] A substrate for a light-emitting element having the same structure as that of the substrate for a light-emitting element shown in Fig. 1 was produced by the method described below. Further, as described above, the same symbols are used for the symbols used for the members after the firing. First, the base green sheet 2 for the substrate 2 and the frame 3 for producing the substrate 1 for a light-emitting element are used, and the green sheet 3 for the frame is produced. Each of the green sheets was composed of the following oxides in such a manner that SiO 2 was 60 −4 mol %, B 2 O 3 was 15.6 mol %, Al 2 〇 3 was 6 mol %, CaO was 15 mol %, K 20 was 1 mol %, and Na 2 〇 was 2 mol %. The glass was mixed, mixed, and the raw material mixture was placed in a platinum crucible to be melted at 1600 ° C for 60 minutes, and then the molten glass was poured out and cooled. The glass was ground by an alumina ball mill for 40 hours to produce a glass powder. Further, the solvent used in the polishing was ethanol. 40% by mass of aluminum oxide powder (product name: AL-45H, manufactured by Showa Electric Co., Ltd., product name: AL-45H), and a lead oxide powder (product of the first rare element chemical industry company, product) The name: HSY-3F-J) is blended and mixed in a 25-mass manner to produce a glass-ceramic composition. To the 50 g of the glass ceramic composition, the organic solvent (toluene, xylene, 2-propanol, 2-butanol mixed at a mass ratio of 4:2:2:1) was mixed and mixed with 5 g of a plasticizer. 2.5 g of (dioctyl phthalate), 5 g of polyvinyl butyral (manufactured by Denki Chemical Co., Ltd., trade name: PVK #3000K) as a binder, and a dispersant (manufactured by Byk Co., Ltd.) Name: BYK180) After 0.5g, it is prepared into a slurry. The slurry was applied onto a PET film by a doctor blade method and a dried green sheet was laminated to produce a green sheet 2 for a base having a slightly flat shape and having a thickness of 0.5 mm after firing, and a shape outside the frame. The green sheet 3 for the frame body having the shape of a substantially circular shape having a diameter of 4.2 mm and having a height of 0.5 mm after firing is the same as that of the green sheet 2 for the base. In the present embodiment, the substrate 1 for a light-emitting element is manufactured as a multi-cavity connection substrate, and is divided into a single square substrate 1 for a light-emitting element having an outer dimension of 5 mm x 5 mm after firing. In the following description, a section of the multi-cavity connecting substrate which is divided into one substrate 1 for light-emitting elements will be described. On the other hand, 'conductive powder (silver powder, manufactured by Daisei Chemical Co., Ltd., trade name: S550), ethyl cellulose as a carrier, blended at a mass ratio of 85:15, and dispersed In the case of the solvent, the solid content was 85% by mass, and the mixture was kneaded in a magnetizer for 1 hour, and further dispersed by three rolls to produce a wiring conductor paste. 35 201233265 In addition, a paste for a metal layer is blended with silver powder (manufactured by Daikin Chemical Co., Ltd., trade name: S400-2) and ethyl cellulose as a carrier at a mass ratio of 9 〇:10. This was dispersed in a solvent of a terpineol so that the solid content became 87% by mass, and then it was produced by kneading in a magnetic mortar and then three times by three rolls. A through hole having a diameter of 〇3 mm is formed in a portion corresponding to one of the base conductors 2 to the through conductor 7 by a punch, and the wiring conductor paste obtained by the above-described screen printing method is used to form a through conductor paste. The layer 7 is simultaneously formed with a pair of external connection terminal paste layers 6 on the back surface 23. Further, a pair of element connection terminals 5 having a substantially rectangular shape are formed on the main surface 21 of the base material green sheet 2 by a screen printing method so as to cover the through-conductor paste layer 7, thereby obtaining a wiring conductor paste layer base. Raw embryo 2 Then, the center of the bottom surface 24 of the concave portion 4 is the same as the center of the bottom surface 24 of the concave portion 4 so that the end edge of the paste layer 5 for the element connection terminal on the main surface 21 of the green sheet 2 of the base material is the same as the outer surface 150 μm. The metal layer paste was screen-printed to form a metal layer paste layer 8 in a circular range of 4 mm to 5 mm in diameter after firing. Further, the film thickness of the metal layer paste layer 8 is adjusted so that the film thickness of the finally obtained metal layer becomes ΙΟμη. Further, on the main surface 21 of the green sheet 2 for the base material, the edge of the element connection terminal paste layer 5 is provided with a paste layer for the component connection terminal including the metal layer paste layer 8 except for the range of the outer side 1〇〇μηι. The peripheral edge of the periphery of the 5, and the circular shape of the formed bottom surface 24 and the bottom surface 24 of the recess 4 (i.e., the diameter after firing is 4.2 mm), the following protective film glass paste is screen printed A protective film glass paste layer 9 is formed. Further, the film thickness of the protective film glass paste layer 36, 36 201233265, was adjusted so that the film thickness of the protective film glass layer finally obtained was 30 μm. Further, the surface sugar content Ra of the protective film glass layer 9 after the firing was measured by SURFCOM 1400D manufactured by Tokyo Seimitsu Co., Ltd., 0 〇〇 6 μηι. Here, the glass powder for the protective film glass layer used for the preparation of the protective film glass paste is produced in the following manner. First, the raw materials are mixed and mixed so that the composition of the oxide-converted Si〇2 is 81.6 mol%, Β2Ο3 is 16.6 mol%, and |^2〇 is 8 8 m〇i%. The raw material and the Kunming character were placed in a platinum crucible and melted at 1600 ° C for 60 minutes, and then the molten glass was poured out and cooled. The glass was ground by an alumina ball mill for 8 to 60 hours to serve as a glass powder for a protective film glass layer. After the glass powder of the protective film glass layer is 60% by mass, and the resin component (containing ethyl cellulose and α-categor in a ratio of 85:15) is blended, it is 40% by mass. The kneading was carried out in a magnetic mortar for a few hours, and then three times of three rolls were used to disperse and prepare a protective mash. The raw frame 3 for a frame obtained as described above was laminated on the main surface 21 of the green sheet 2 with various paste layers prepared as described above to obtain an unsintered multi-cavity bonded substrate. In the unfired multi-cavity slabs, the unsintered multi-cavity slabs are cut into the cuts so that the outer dimensions of the unfired light-emitting element substrate 1 are 5 mm x 5 mm after firing. After the line, it was degreased at 55 ° C for 5 hours, and further 870. (: The firing of the multi-cavity connecting substrate was carried out for 30 minutes. The obtained multi-cavity connecting substrate was divided along the dividing line to produce the light-emitting element substrate 1. The obtained light-emitting element substrate 1 was obtained. In the case where the inner wall surface of the frame body 3 is the side surface 25 and the recessed portion 4 of the base main surface 21 is the bottom surface 24, the shape of the bottom surface of the bottom surface of the surface of the surface of the surface of the surface of the surface of 8. The base body 2 and the frame body 3 are cut between the base body 2 and the frame body 3 so as to extend across the bottom surface 24 (four), and are formed so as to be substantially equal. In addition, the side surface 25 of the concave portion 4 was measured by a haze value (NDH surface manufactured by Nippon Denshoku Co., Ltd.) to be 100% by the haze value of the inner wall surface of the filament body which was slightly slid to the bottom surface 24. The substrate 丨 for the illuminating element was obtained, and after the distortion was measured by SURFC0M 14 东京 manufactured by Tokyo Seimi Co., Ltd., the lowest position (both ends) and the highest position (slightly central portion) of the back surface 23 of the base (5) for the light-emitting element were obtained. The height difference is ΙΟμηι. In addition, the bonding strength of the substrate 2 and the frame 3 was measured by the multi-purpose bonding strength tester SS-30WD (manufactured by Seiichi Kogyo Co., Ltd.) as the substrate 丨 for the light-emitting element obtained, and was 4 〇N/mm 2 (in There is no peeling in the interface between the base 2 and the frame 3). The results are shown in Table 1. [Examples 2 to 4] The fabrication was the same as that of the substrate for a light-emitting device of the first embodiment except that the metal layer 8 having the same square opening as the substrate for a light-emitting element shown in Fig. 2 was produced. The substrate 1 for a light-emitting element. In the second embodiment, the outer shape of the portion in which the metal layer 8 has been formed is a substantially square shape having a side length of 3.5 mm after firing. Further, in the substrate 1 for a light-emitting element of the second embodiment, the ratio ' of the outer periphery of the metal layer 8 across the bottom surface 24 of the recessed portion 4 is 43% with respect to the entire outer peripheral length. Adopt the previous embodiment! In the same manner, the tracking of the substrate 1 for a light-emitting element and the bonding strength between the substrate 2 and the frame 3 were measured. The results are shown in Table 1. In the second embodiment, the substrate for a light-emitting element of Example 3 and Example 4 was produced in the same manner as in Example 2 except that the size of the metal layer 8 was changed to the size of 38 201233265 shown in Table 完全. 1. In the third and fourth embodiments, the ratio 'the outer circumference of the metal layer 8 across the bottom surface 24 of the recessed portion 4 was 53% and 70% with respect to the entire outer circumference. In the same manner as in the first embodiment, the substrate 1 for a light-emitting element was measured for the warpage of the substrate 1 for a light-emitting element and the bonding strength between the substrate 2 and the frame 3. The results are shown in Table 1. [Comparative Example] Except that the metal layer 8 was formed into a circular shape having a diameter of 4.2 mm which is identical to the bottom surface 24 of the concave portion 4 in the foregoing first embodiment, and the metal layer 8 did not completely cross the outer periphery of the bottom surface 24, In the first embodiment, the substrate 1 for a light-emitting element of the comparative example was produced in the same manner. In the same manner as in the above-described first embodiment, the substrate i for the light-emitting element obtained was measured, and the warpage of the substrate i for the light-emitting element and the bonding strength between the substrate 2 and the frame 3 were measured. The results are shown in Table i. [Table 1] (The gold ruler is the size of the outer shape. The ratio of the outer circumference of the bottom surface is distorted (um, the joint body of the base and the frame)

產業上之可利用性 於具有凹部且於其底面搭載著發 ，可減低基板本物曲的比率。本 光元件Industrial Applicability The concave portion is provided with a hair on the bottom surface thereof, and the ratio of the substrate curvature can be reduced. Optical component

來減低發光元件的位置 偏離或傾 依據本發明，於具凑 的發光元件用基板之中， 發明之發光裝置， 發明之發光元件用__ 39 201233265 斜，且為光的方向性與設計不同等的問題及因接合引線偏 離所致之斷線的發生等的問題已受抑制者。又，使用焊錫 將該發光裝置進一步安裝於印刷電路板等時，亦能減低以 基板之翹曲為原因所發生之斷線或散熱性惡化等的問題。 如所述之本發明的發光裝置’係能適於作為例如行動電 話、個人電腦及平面電視之液晶顯示器等的背光源、汽車 用或是裝飾用的照明、一般照明、及其他的光源來使用。 另外，在此援引已於2010年10月27日提出申請之曰本 專利申請案2010-241077號之說明書、申請專利範圍、圖式 以及摘要之全部内容，且將其納入用以作為本發明之揭示。 【圖式簡單説明】 第1(a)、（b)圖係顯示本發明之發光元件用基板之實施 形態之一例的圖式，（a)為平面圖’（b)為截面圖。 第2(a)、（b)圖係顯示本發明之發光元件用基板之實施 形態之別例的圖式，（a)為平面圖，（b)為截面圖。 第3(a)、（b)圖係顯示使用了示於第1圖之發光元件用基 板之本發明之發光裝置之一例的圖式，（a)為平面圖，（b)為 截面圖。 【主要元件符號說明】 1.. ·發光元件用基板 2.. .基體(基體用生胚片） 3·..框體(框體用生胚片） 4.. .凹部 5··.元件連接端子(元件連接端 子用糊層） 6…外部連接端子(外部連接端 子用糊層） 7…貫通導體(貫通導體用糊層） 8…金屬層(金屬層用糊層） 40 201233265 9.. .保護膜玻璃層(保護膜玻璃 糊層 10…發光裝置 11.. .發光元件 12.. .接合引線 13.. .密封層 21.. .基體之主面 22.. .發光元件搭載部 23.. .基體之背面 24.. .凹部之底面 25.. .凹部之側面 A...外周 41In order to reduce the positional deviation or tilt of the light-emitting element, according to the present invention, the light-emitting device of the invention is used in the light-emitting device of the invention, and the light-emitting device of the invention is inclined by __39 201233265, and the directivity of the light is different from the design. Problems such as the occurrence of disconnection due to deviation of the bonding leads have been suppressed. Further, when the light-emitting device is further mounted on a printed circuit board or the like by using solder, the problem of disconnection or deterioration in heat dissipation due to warpage of the substrate can be reduced. The illuminating device of the present invention as described above can be suitably used as a backlight for a mobile phone such as a mobile phone, a personal computer or a flat-panel television, illumination for automobiles or decoration, general illumination, and other light sources. . In addition, the entire contents of the specification, the patent application, the drawings and the abstract of the patent application No. 2010-241077, filed on Oct. 27, 2010, the entire contents of reveal. [Brief Description of the Drawings] Figs. 1(a) and 1(b) are views showing an example of an embodiment of a substrate for a light-emitting element of the present invention, wherein (a) is a plan view and (b) is a cross-sectional view. Figs. 2(a) and 2(b) are views showing a different example of the embodiment of the substrate for a light-emitting element of the present invention, wherein (a) is a plan view and (b) is a cross-sectional view. Figs. 3(a) and 3(b) are views showing an example of a light-emitting device of the present invention using the substrate for a light-emitting element shown in Fig. 1, wherein (a) is a plan view and (b) is a cross-sectional view. [Explanation of main component symbols] 1.. Substrate for light-emitting device 2. Base for substrate (green plate for substrate) 3·.. Frame (green plate for frame) 4. Recessed part 5··. Connection terminal (component connection terminal paste layer) 6: External connection terminal (external connection terminal paste layer) 7...through conductor (through conductor strip layer) 8...metal layer (metal layer paste layer) 40 201233265 9. Protective film glass layer (protective film glass paste layer 10: light-emitting device 11.. light-emitting element 12:. bonding lead 13: sealing layer 21.. main surface of substrate 22: light-emitting element mounting portion 23 .. . The back of the base body 24: The bottom surface of the recess 25.. The side A of the recess... The outer circumference 41

Claims (1)

201233265 七、申請專利範圍： 1. 一種發光元件用基板，係具有： 基體，係由第1無機絕緣材料所構成且主面為平坦 之板狀者；及 框體，係業已接合於前述基體之上側主面，且由第 2無機絕緣材料所構成者；又 在以前述基體之上側主面的一部分為底面且以前 述框體之内壁面為側面所形成的凹部之底面，具有發光 元件之搭載部； 該發光元件用基板之特徵在於： 於前述凹部底面上，具有金屬層，該金屬層係至少 一部分跨過凹部底面的外周而配置於框體與基體之 間，且以未達基體外緣的方式配設者。 2. 如申請專利範圍第1項之發光元件用基板，其中前述金 屬層係跨過前述凹部底面之外周全周且被配置於框體 與基體之間。 3. 如申請專利範圍第1項之發光元件用基板，其中前述金 屬層跨過前述凹部底面的外周所配設之部分的外周合 計長度，相對於前述凹部底面之外周全長係40%以上。 4. 如申請專利範圍第1至3項中任一項之發光元件用基 板，其中從前述凹部底面的外周起，至前述框體與基體 間之前述金屬層的端緣為止的距離(L)係100〜200μηι。 5. 如申請專利範圍第1至4項中任一項之發光元件用基板， 其中前述金屬層係反射層或用以形成反射層之底層。 42 201233265 6_如申請專利範圍第1至5項中任一項之發光元件用基板， 其中前述第1無機絕緣材料及第2無機絕緣材料係皆為包 含玻璃粉末與陶瓷粉末之玻璃陶瓷組成物的燒結物，且 構成前述金屬層的金屬係以銀作為主成分的金屬。 7. 如申請專利範圍第1至5項中任一項之發光元件用基 板，其中前述第1無機絕緣材料及第2無機絕緣材料係皆 為氧化銘陶究組成物的燒結物，且構成前述金屬層的金 屬係以選自於由鎢及鉬所構成群組中之至少一種作為 主成分的金屬。 8. 如申請專利範圍第7項之發光元件用基板，其係於前述 以選自於由鎢及鉬所構成群組中之至少一種作為主成 分的金屬層上，形成有以銀作為主成分的金屬反射層。 9. 一種發光裝置，其特徵在於具有： 如申請專利範圍第1至8項中任一項之發光元件用 基板；及 搭載於前述發光元件用基板之發光元件。 43201233265 VII. Patent application scope: 1. A substrate for a light-emitting element, comprising: a base body composed of a first inorganic insulating material and having a flat main surface; and a frame body to be bonded to the base body The upper main surface is composed of a second inorganic insulating material, and the bottom surface of the recessed portion formed by a part of the upper main surface of the base as the bottom surface and the inner wall surface of the housing is a side surface, and is provided with a light-emitting element. The light-emitting element substrate has a metal layer on a bottom surface of the concave portion, and the metal layer is disposed between the frame body and the base body at least partially across the outer periphery of the bottom surface of the concave portion, and has a non-base outer edge Way of setting up. 2. The substrate for a light-emitting element according to claim 1, wherein the metal layer is disposed over the entire periphery of the bottom surface of the concave portion and disposed between the frame and the substrate. 3. The substrate for a light-emitting element according to the first aspect of the invention, wherein the total length of the outer circumference of the portion of the metal layer that is disposed across the outer periphery of the bottom surface of the concave portion is 40% or more with respect to the entire outer circumference of the concave portion. 4. The substrate for a light-emitting device according to any one of claims 1 to 3, wherein a distance from the outer periphery of the bottom surface of the recess to the edge of the metal layer between the frame and the substrate (L) It is 100~200μηι. 5. The substrate for a light-emitting element according to any one of claims 1 to 4, wherein the metal layer is a reflective layer or a bottom layer for forming a reflective layer. The substrate for a light-emitting element according to any one of claims 1 to 5, wherein the first inorganic insulating material and the second inorganic insulating material are glass ceramic compositions containing glass powder and ceramic powder. The sintered material and the metal constituting the metal layer are metals in which silver is a main component. 7. The substrate for a light-emitting device according to any one of claims 1 to 5, wherein the first inorganic insulating material and the second inorganic insulating material are sintered bodies of the composition of the oxidized ceramic composition, and constitute the aforementioned The metal of the metal layer is a metal selected from at least one selected from the group consisting of tungsten and molybdenum as a main component. 8. The substrate for a light-emitting device according to the seventh aspect of the invention, wherein the substrate is selected from the group consisting of at least one selected from the group consisting of tungsten and molybdenum as a main component, and silver is used as a main component. Metal reflective layer. A light-emitting device, comprising: a substrate for a light-emitting device according to any one of claims 1 to 8; and a light-emitting device mounted on the substrate for a light-emitting device. 43
TW100139112A 2010-10-27 2011-10-27 Substrate for light-emitting element, and light emitting device TW201233265A (en)

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