201227814 六、發明說明· 【發明所屬之技術領域】 本發明是有關於一種半導體的製造方法，且特別是有關於 一種改善靜電堆積之半導體的製造方法。 【先前技術】 半導體製程47所產生的靜電以及製程所產生之污染物粒 子及金屬污Ικ物不但會吸附於半導體晶圓表面造成污染，而且 更會引發電荷大量累積，破壞元件圖案使其變形，甚至有因快 速放電而點燃有機溶液引起火花或爆炸的危機❶因此，半導體 的每-個製程，通常都需要清洗步驟，晶圓經過清洗後可去除 因製程所產生之粒子及金屬的污染物，進而使完成的積體電路 良率提高。 然而，傳統以清水沖洗的清洗方式，對於先進製程的晶圓 表面衝擊過大，容易造成元件圖案的損壞。因此必須改採用水 霧來清洗晶圓表面。圖1係根據習知的半導體晶圓製程步驟所 繪示的水霧清洗步驟的示意圖。習知的水霧清洗方法主要係利 用喷嘴ι〇2混合氮氣喷出水霧1〇4來清洗半導體表面1〇6。 然而，在與晶圓半導體表面106接觸瞬間，噴出的水霧 易引發先前製程中累積的電荷1〇8產生類似火山爆發的靜 電何喷發現象’造成半導體晶圓上積體電路圖案的損傷和變 形。 【發明内容】 主有鑑於此，本發明的目的就是在提供一種半導體製程中的 清洗方法，其改善了靜電堆積的問題。 本發明提出一種半導體製程中的清洗方法，此—清洗方法 201227814 包括下述步驟：首先提供半導體基板。提供水霧持續第一期間 以^半導體基板進行清洗。同時於第一期間之起始點或起始點 之刖，在基板上形成水膜，並維持此一水膜，時間長度持續約 第二期間，並且使第二期間與第一期間至少部分重疊，用來緩 衝水霧所帶來的影響。 ’ 在本發明之一實施例中，上述半導體基板可為晶圓。 在本發明之一實施例中，上述半導體基板可為旋轉式半導 體基板，此旋轉式半導體基板之轉速可為2〇〇〇〜sorpm。 在本發明之一實施例中，清洗半導體基板的途徑可為自距 鬱離半導體基板中心15公厘（mm)處開始，在半導體基板中心 與距離半導體基板邊緣3公厘處（mm)之間來回清洗。 在本發明之一實施例中’上述水霧由氮氣源霧化第一去離 子水形成。 在本發明之一實施例中，上述氮氣源之流量可為5〜1〇〇公 升/分（Ι/min)。 θ在本發明之一實施例中，上述形成水霧之第一去離子水流 量可為10〜300毫升/分（ml/min)。 • 在本發明之一實施例中，上述水膜可由第二去離子水覆蓋 於半導體基板所形成。 在本發明之一實施例中，上述水膜中更包括低電阻氣體溶 於水獏之中。 ' 在本發明之一實施例中，上述低電阻氣體可為二氧化碳。 在本發明之一實施例中’上述形成水膜之第二去 量可為1500毫升/分(ml/min)。 机 在本發明之一實施例中’上述形成該水膜之第二去離子水 流量可隨時間遞減。 201227814 在本發明之一實施例中，上述形成水骐 ' 量大於形成水霧之第一去離子水流量。、第一去離子水流 在本發明之一實施例中，上述水霧之喷 點之間距離小於3公分。 點和水膜之喷出 在本發明之一實施例中，上述第二期 (psecond)〜2〇〇 秒。 "為 20 微秒 在本發明之一實施例中，上述第二期 間。 叫實質切第-期 在本發明之一實施例中，上述第二期間與 在本發明之一實施例中，上述第一期間之功間同步。 學清洗過程。 又别更包括進行化 本發明提出之半導體製程中的清洗方法， 出水霧來清辭導體基板，同時於此第, 於半導體上形成水膜，並維持此—水膜，時間長二^ 期間，並且使第二期間與第—期間至少部分重A: 進而避免半導體表面出現靜;暴炸現象，降 低對半導體晶圓上圖案的損傷。 慯下為^主本與^明之上述和其他目的、特徵和優點能更明顯易 μ，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下。 【實施方式】 …在半導體製程巾化學清洗可有效的去除在^表面的各 式污染源，常用的化學清洗過程包括標準化的第一步清洗 CSta=ard Clean 1)與標準化的第二步清洗（Standardclean 2)_。標準化的第一步清洗主要應用弱鹼微蝕刻晶圓表層，將 附著於晶圓表面的微粒子去除，同時也去除部份有機汙染物和 201227814 金屬離子。而標準化的第二步清洗，則主要應用於金屬離子的 去除。 於化學清洗後，為移除化學洗洗過程所利用的化學品或是 累積之靜電荷，須以去離子水進行一清洗過程，但習知的清洗 方法以水霧清洗晶圓表面的接觸瞬間，喷出的水霧易使先前累 積的靜電荷產生類似火山爆發的噴發現象，造成半導體晶圓上 積體電路圖案的損傷和變形。於是本發明提出一種半導體製程 中的清洗方法，避免了靜電荷產生喷發的問題。201227814 VI. Description of the Invention [Technical Field] The present invention relates to a method of manufacturing a semiconductor, and more particularly to a method of manufacturing a semiconductor for improving electrostatic deposition. [Prior Art] The static electricity generated by the semiconductor process 47 and the contaminant particles and metal contamination κ generated by the process not only adsorb on the surface of the semiconductor wafer, but also cause a large accumulation of electric charge and destroy the pattern of the element to deform. There is even a crisis of sparking or exploding due to the rapid discharge of the organic solution. Therefore, every process of the semiconductor usually requires a cleaning step, and the wafer can be cleaned to remove particles and metal contaminants generated by the process. In turn, the completed integrated circuit yield is improved. However, the conventional cleaning method of flushing with water has an excessive impact on the wafer surface of the advanced process, which is liable to cause damage to the component pattern. Therefore, it is necessary to use water mist to clean the surface of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic illustration of a water mist cleaning step as illustrated by conventional semiconductor wafer processing steps. The conventional water mist cleaning method mainly uses a nozzle ι 2 mixed nitrogen gas to spray a water mist 1 〇 4 to clean the semiconductor surface 1 〇 6. However, at the moment of contact with the wafer semiconductor surface 106, the sprayed water mist easily causes the accumulated charge in the previous process to generate a volcanic eruption-like electrostatic spray that appears to cause damage to the integrated circuit pattern on the semiconductor wafer. Deformation. SUMMARY OF THE INVENTION In view of the above, it is an object of the present invention to provide a cleaning method in a semiconductor process which improves the problem of electrostatic buildup. The present invention provides a cleaning method in a semiconductor process. The cleaning method 201227814 includes the following steps: First, a semiconductor substrate is provided. The water mist is supplied for the first period of time to be cleaned by the semiconductor substrate. At the same time, after the starting point or the starting point of the first period, a water film is formed on the substrate, and the water film is maintained for a duration of about a second period, and the second period is at least partially overlapped with the first period. Used to buffer the effects of water mist. In an embodiment of the invention, the semiconductor substrate may be a wafer. In an embodiment of the invention, the semiconductor substrate may be a rotating semiconductor substrate, and the rotational speed of the rotating semiconductor substrate may be 2 〇〇〇 to so rpm. In one embodiment of the present invention, the method of cleaning the semiconductor substrate may be 15 centimeters (mm) from the center of the semiconductor substrate, between the center of the semiconductor substrate and 3 mm (mm) from the edge of the semiconductor substrate. Wash back and forth. In one embodiment of the invention, the water mist is formed by atomizing the first deionized water from a source of nitrogen. In an embodiment of the invention, the flow rate of the nitrogen source may be 5 to 1 Torr (Ι/min). θ In one embodiment of the invention, the first deionized water stream forming the water mist may be from 10 to 300 ml/min (ml/min). • In an embodiment of the invention, the water film may be formed by covering the semiconductor substrate with a second deionized water. In an embodiment of the invention, the water film further comprises a low resistance gas dissolved in the water raft. In an embodiment of the invention, the low resistance gas may be carbon dioxide. In one embodiment of the invention, the second amount of water film formation described above may be 1500 ml/min. In one embodiment of the invention, the second flow of deionized water forming the water film described above may decrease over time. 201227814 In one embodiment of the invention, the amount of water raft formation described above is greater than the flow rate of the first deionized water forming the water mist. First deionized water stream In one embodiment of the invention, the distance between the spray points of the water mist is less than 3 cm. Point and Water Film Ejection In one embodiment of the invention, the second period (psecond) is ~2 sec. " is 20 microseconds In one embodiment of the invention, the second period described above. In an embodiment of the invention, in the second period and in an embodiment of the invention, the work in the first period is synchronized. Learn the cleaning process. Furthermore, the cleaning method in the semiconductor process proposed by the present invention is further carried out, and a water mist is used to clear the conductor substrate, and at the same time, a water film is formed on the semiconductor, and the water film is maintained for a long period of time. And the second period and the first period are at least partially weighted by A: thereby avoiding the occurrence of static on the surface of the semiconductor; the phenomenon of overburdening, reducing damage to the pattern on the semiconductor wafer. The above and other objects, features and advantages of the present invention will become more apparent and obvious, and the preferred embodiments will be described hereinafter with reference to the accompanying drawings. [Embodiment] ... chemical cleaning of semiconductor process towel can effectively remove various pollution sources on the surface. Common chemical cleaning processes include standardized first step cleaning CSta=ard Clean 1) and standardized second cleaning (Standardclean) 2)_. The first step of the standardization cleaning is to apply the weak base micro-etched wafer surface layer to remove the particles attached to the wafer surface, and also remove some organic pollutants and 201227814 metal ions. The second step of standardization cleaning is mainly applied to the removal of metal ions. After chemical cleaning, in order to remove the chemical used in the chemical washing process or the accumulated static charge, a cleaning process must be performed with deionized water, but the conventional cleaning method uses a water mist to clean the contact surface of the wafer surface. The sprayed water mist tends to cause the previously accumulated static charge to produce a spray pattern similar to a volcanic eruption, causing damage and deformation of the integrated circuit pattern on the semiconductor wafer. Thus, the present invention proposes a cleaning method in a semiconductor process that avoids the problem of eruption caused by static charges.
一，2為本發明之一實施例中半導體製程中的水霧清洗方 法不意圖。請參照圖2，在本實施例中使用水霧喷嘴2〇2和流 體喷嘴204來進行半導體製程中的清洗，首先提供半導體基板 206 ’使其旋轉。其中，半導體基板2〇6可為晶圓，而晶圓之 旋轉轉速約為2000〜30轉（rpm)。 控制水霧喷嘴202喷出水霧2〇8，持續第一期間以清洗半 導體基板206 ’其中水霧喷冑2〇2中包含氮氣源，其流量約為 5〜綱公升/分，此氮氣源可使第一去離子水霧化形成一水霧， 而第去離子水之抓量約為〜細毫升/分，將水霧喷向半導 體基板2〇6表面偏離其幾何中心一小段距離之位置上。 施例中:’水霧喷嘴202的位置可自半導體基板2〇6上距幾何中 心15公厘（mm)處開始清洗，經過晶圓中心處，再移往距晶 圓圓周邊緣3公厘（_)處，並在上卿中來^曰 使用水霧2G8清潔晶圓表面的優點為，一方面可去除之前 二在免 ==以及金One or two is not intended to be a water mist cleaning method in a semiconductor process in an embodiment of the present invention. Referring to Fig. 2, in the present embodiment, the water mist nozzle 2〇2 and the fluid nozzle 204 are used for cleaning in the semiconductor process, and the semiconductor substrate 206' is first provided to be rotated. The semiconductor substrate 2〇6 can be a wafer, and the rotational speed of the wafer is about 2000 to 30 revolutions (rpm). The water mist nozzle 202 is controlled to spray the water mist 2〇8 for the first period to clean the semiconductor substrate 206', wherein the water mist squirt 2〇2 contains a nitrogen source, and the flow rate is about 5 liters liter/min. The first deionized water can be atomized to form a water mist, and the amount of the deionized water is about ~ fine milliliters per minute, and the water mist is sprayed toward the surface of the semiconductor substrate 2〇6 from the geometric center by a small distance. on. In the example: 'The position of the water mist nozzle 202 can be cleaned from the center of the semiconductor substrate 2〇6 from the geometric center 15 mm (mm), passing through the center of the wafer, and then moved to 3 mm from the circumferential edge of the wafer ( _), and in the upper Qingzhong ^ 曰 use the water mist 2G8 to clean the surface of the wafer has the advantage that on the one hand can remove the previous two in the free == and gold
206表面’挾帶太大衝擊力造成半;=基J 的電路圖案損毀。 衣囟上已形成 201227814 但若單獨使用水霧喷嘴202清洗半導體基板206，水霧2〇8 在一開始接觸半導體基板2〇ό的幾毫秒内，會引起來自於前一 製程或前一化學清洗所累積的靜電荷212，產生類似火山爆發 ，靜電荷212喷發，易使半導體基板2〇6表面的電路圖案損傷 變形。因此本發明的實施例，即是控制流體噴嘴2〇4，當水霧 喷嘴202-開始喷出水霧施的第一期間之起始點或第一期間 起始點之前，在半導體基板2〇6上，以第二去離子水形成水膜 210，利用流體噴嘴204喷出，並使形成水膜21〇的第二去離 子水保持-定流量，且時間長度持續約第二細，此第二期間 約為20微秒〜2〇〇秒。其中，第二期間會與水霧喷嘴2〇2開始 喷出水霧208的第一期間之起始點重疊。 二，詳細來說’形成上述水膜的目的在於，使之前化學清洗和 刚製知所產生的靜電荷2丨2隨著水膜的生成而移除，故靜電荷 2^2不會持續累積，避免當水霧施喷向半導體基板2〇6表面 時引起靜電荷212的喷發而爆炸’造成其上電路圖案的損傷、 變形。也就是說，當水霧施一開始接觸半導體基板2〇6時， 水膜210即必須與水霧2〇8同時存在。 / 土由於累積在半導體基板206表面的大部份靜電，可能 從水霧208接觸半導體基板施的第一期間起始點開始的2〇 微秒至數秒鐘内，即被水膜210所移除。因此，維持水膜21〇 =第二期間只要能夠與水霧2〇8接觸半導體基板襄、 ，起始點重疊，即可防止類似火山爆發的靜電荷212喷發。因 ^門^持，210的第二期間可以較水霧208持續喷出的第一 二二二Ϊ較第一期間長;也可以和水霧2 〇 8持續喷出的第 B樣長。在本實施例之中，第二期間係與第一期間同步。 另外，值得注意的是，當水霧噴嘴2〇2單位時間嘴出的水 201227814206 surface '挟 with too much impact force caused by half; = base J circuit pattern is damaged. 201227814 has been formed on the placket. However, if the semiconductor substrate 206 is cleaned by using the water mist nozzle 202 alone, the water mist 2 〇 8 may cause the chemical cleaning from the previous process or the previous chemical cleaning within a few milliseconds of initial contact with the semiconductor substrate 2 . The accumulated static charge 212 produces a volcanic eruption, and the static charge 212 erupts, which easily damages the circuit pattern on the surface of the semiconductor substrate 2〇6. Therefore, the embodiment of the present invention, that is, the control fluid nozzle 2〇4, is on the semiconductor substrate 2 before the water mist nozzle 202 starts to eject the first period of the water mist application or before the first period starting point. 6 , the water film 210 is formed by the second deionized water, is sprayed by the fluid nozzle 204, and the second deionized water forming the water film 21〇 is maintained at a constant flow rate, and the length of time continues to be about the second fine. The second period is about 20 microseconds to 2 seconds. The second period overlaps with the starting point of the first period in which the water mist nozzle 2〇2 starts to eject the water mist 208. Second, in detail, the purpose of forming the above water film is to prevent the static charge 2丨2 generated by the previous chemical cleaning and the prior preparation from being removed with the formation of the water film, so the static charge 2^2 does not continue to accumulate. It is avoided that when the water mist is sprayed onto the surface of the semiconductor substrate 2〇6, the eruption of the static charge 212 is caused to explode, causing damage and deformation of the circuit pattern thereon. That is, when the water mist initially contacts the semiconductor substrate 2〇6, the water film 210 must exist simultaneously with the water mist 2〇8. / soil due to the accumulation of most of the static electricity on the surface of the semiconductor substrate 206, may be removed from the water film 210 from 2 microseconds to several seconds from the start of the first period in which the water mist 208 contacts the semiconductor substrate. . Therefore, by maintaining the water film 21 〇 = the second period, as long as the water mist 2 〇 8 can contact the semiconductor substrate , and the starting point overlaps, the electrostatic charge 212 similar to the volcanic eruption can be prevented from erupting. The first period of 210 may be longer than the first period of the second period of the water mist 208, and may be longer than the first period of the water mist 2 〇 8 . In the present embodiment, the second period is synchronized with the first period. In addition, it is worth noting that when the water mist nozzle 2 〇 2 unit time mouth water 201227814
速較大時’代表水霧喷嘴2〇2嘴出的水體積較多、水深較 :’相對地粒子清洗能力會變差，會使半導體基板2〇6表面粒 子移^率下降。故為了要錄子移除速率不致下降，同時也 不使別-製程或前-化學清洗所累積的靜電荷212在半導體 基板206產生類似火山爆發的靜電荷212喷發。較佳的 是’維持水霧喷嘴202喷出水霧通的起始流速，並在水^ 嘴202嘴出水霧的第一期間，即同時控制流體喷嘴2〇4， 在半導體基板206表面形成水膜21〇。除此之外，也可以 霧208接觸半導體基板2〇6的第一期間起始點開始的數秒鐘之 後，逐漸降低水霧喷嘴2〇2喷出水霧細的流量，《逐;斬降低 由流體喷嘴204流出的第二絲子水的流量，以讓水膜21〇的 厚度自第-賴之起始闕始，慢慢隨著咖逐漸遞減，以達 到增進水霧208移除粒子能力的效果。 在本實施例中’水霧喷嘴2G2和流體噴嘴2〇4彼此相距之 距離約小於3公分，在本實_巾，此距離約為18〜2〇公厘 (mm);財膜210係由流體喷嘴2〇4所噴出的去離子水所 形成。其中’水膜2丨㈣體積實質大於水霧噴嘴搬所喷出水 霧208的總體積。在水膜21〇的潤洗保護下，靜電 水膜2㈣引帶離，而不會引起靜電荷212在半導體基板表面 206形成爆發。 且為降低電荷累積引發爆炸之情況，流體喷嘴204所喷出 水中’更包含加入低電阻氣體使其溶於此水膜21〇之中。加入 低電阻氣體的目的’是在使靜電荷212更容易隨著流動的水膜 210離開，不致堆積’減少靜電荷212在半導體基板施產生 類似火山爆發的靜電荷212喷發，降低對其表面電路圖案的損 傷。在本實施例中’流體喷嘴2〇4是採用去離子水，再加入低 201227814 水細〇，利用低電 使静電何212更容易被移除。 水霧喷ΐίί水之半導趙製程+的清洗方法，是在 長度持續約第二期間，並且使第二期間與第- 帶i靜2分重疊H緩衝轉所帶來的影響，#由此水膜 ^電何’改善半導體靜電荷堆積的問題，進而避免引起其 面靜電爆炸現象’降低對半導體晶圓上圖案的損傷。” 雖然本發明已喃佳實關揭露如上，财麟用以限定 本發明’任何熟f此技藝者，在秘離本㈣之精神和範圍 内，虽可作些許之更動與潤飾，因此本發明之保護範圍當視後 附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1係根據習知的半導體晶圓在製程步驟，繪示進行水霧 清洗步驟的清洗方法示意圖。 圖2根據本發明之一實施例繪示半導體製程的清洗方法 示意圖。 【主要元件符號說明】 102、202 :水霧喷嘴 106、206 :半導體基板 流體喷嘴 104、208 :水霧 108、212 :靜電荷 204 : 210 :水膜When the speed is large, the water volume of the water mist nozzle 2〇2 is large, and the water depth is relatively small: 'The relative particle cleaning ability is deteriorated, and the surface particle migration rate of the semiconductor substrate 2〇6 is lowered. Therefore, in order to prevent the recording rate from being lowered, the static charge 212 accumulated by the other process or the pre-chemical cleaning is not ejected on the semiconductor substrate 206 to generate a static charge 212 similar to a volcanic eruption. Preferably, the initial flow rate of the water mist passage is maintained, and the fluid nozzle 2〇4 is simultaneously controlled during the first period of the water mist from the mouth of the water nozzle 202 to form water on the surface of the semiconductor substrate 206. Membrane 21 〇. In addition, after the mist 208 contacts the start of the first period of the semiconductor substrate 2〇6, the flow rate of the water mist nozzle 2〇2 is gradually reduced, and the flow rate of the water mist is reduced. The flow rate of the second filament water flowing out of the fluid nozzle 204 is such that the thickness of the water film 21〇 starts from the beginning of the first lag, and gradually decreases with the coffee, so as to increase the ability of the water mist 208 to remove particles. effect. In the present embodiment, the 'water mist nozzle 2G2 and the fluid nozzle 2〇4 are spaced apart from each other by a distance of less than about 3 cm. In the present embodiment, the distance is about 18 to 2 mm (mm); Deionized water sprayed from the fluid nozzle 2〇4 is formed. The volume of the water film 2 (four) is substantially larger than the total volume of the water spray 208 sprayed by the water mist nozzle. Under the rinsing protection of the water film 21, the electrostatic water film 2 (4) is taken away without causing the electrostatic charge 212 to form an explosion on the surface 206 of the semiconductor substrate. In order to reduce the charge accumulation and cause an explosion, the fluid nozzle 204 is ejected from the water' to include a low-resistance gas to be dissolved in the water film 21〇. The purpose of adding a low-resistance gas is to make the electrostatic charge 212 easier to leave with the flowing water film 210, so as not to accumulate, reducing the electrostatic charge 212 on the semiconductor substrate to generate a similar volcanic eruption of the static charge 212, reducing the surface thereof. Damage to the circuit pattern. In the present embodiment, the 'fluid nozzle 2 〇 4 is made of deionized water, and then the low water of 201227814 is added, and the low electricity makes the electrostatic 212 more easily removed. The method of cleaning the water mist squirting ί ί ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ The water film ^ electric "how to improve the problem of semiconductor static charge accumulation, and thus avoid causing its surface electrostatic explosion phenomenon 'reduce the damage to the pattern on the semiconductor wafer. Although the present invention has been disclosed above, it is intended to limit the invention to any skilled person, and in the spirit and scope of the present invention, although some modifications and refinements may be made, the present invention is The scope of protection is defined by the scope of the appended patent application. [Simplified Schematic] FIG. 1 is a schematic diagram showing a cleaning method for performing a water mist cleaning step according to a conventional semiconductor wafer in a process step. 2 is a schematic diagram showing a cleaning method of a semiconductor process according to an embodiment of the present invention. [Main component symbol description] 102, 202: water mist nozzles 106, 206: semiconductor substrate fluid nozzles 104, 208: water mist 108, 212: electrostatic charge 204 : 210 : water film