CN115036207A - Method for improving wafer point discharge defect - Google Patents

Method for improving wafer point discharge defect Download PDF

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Publication number
CN115036207A
CN115036207A CN202210746061.7A CN202210746061A CN115036207A CN 115036207 A CN115036207 A CN 115036207A CN 202210746061 A CN202210746061 A CN 202210746061A CN 115036207 A CN115036207 A CN 115036207A
Authority
CN
China
Prior art keywords
wafer
point discharge
cleaning
improving
central area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210746061.7A
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Chinese (zh)
Inventor
宋鹏
徐晓林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Huali Integrated Circuit Manufacturing Co Ltd
Original Assignee
Shanghai Huali Integrated Circuit Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Huali Integrated Circuit Manufacturing Co Ltd filed Critical Shanghai Huali Integrated Circuit Manufacturing Co Ltd
Priority to CN202210746061.7A priority Critical patent/CN115036207A/en
Publication of CN115036207A publication Critical patent/CN115036207A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B11/00—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/022—Cleaning travelling work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Abstract

The invention provides a method for improving the point discharge defect of a wafer, which comprises the following steps: providing a wafer, wherein the wafer comprises a central area and an edge area surrounding the central area; and cleaning the edge area of the wafer to increase the conductivity of the surface of the wafer before the wet process. The invention solves the problem that the existing wafer generates point discharge defects in the wet process.

Description

Method for improving wafer point discharge defect
Technical Field
The invention relates to the field of integrated circuit manufacturing, in particular to a method for improving the point discharge defect of a wafer.
Background
During the preparation of the wafer, a wet process is required, and during the wet process, charges carried by the used liquid medicine from the pipeline are firstly contacted with the center of the wafer, so that the wafer is rapidly discharged (as shown in fig. 1), and the rapid discharge of the wafer damages the surface structure of the wafer, so that the wafer forms a point discharge defect, and further, the yield of the specific position (central area) of the wafer is lost.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention is directed to a method for improving wafer point discharge defects, which is used to solve the problem of the existing wafer generating point discharge defects during the wet process.
To achieve the above and other related objects, the present invention provides a method for improving a wafer tip discharge defect, the method comprising:
providing a wafer, wherein the wafer comprises a central area and an edge area surrounding the central area;
and cleaning the edge area of the wafer to increase the conductivity of the surface of the wafer before the wet process.
Optionally, a cleaning solution used in cleaning the edge region of the wafer includes hydrogen peroxide.
Optionally, the flow rate of the wash solution is between 0.1ml/s and 0.3 ml/s.
Optionally, the method for cleaning the edge region of the wafer includes:
protecting the central area of the wafer by using a mask layer;
and spraying the cleaning solution to the edge area by using a nozzle and rotating the wafer.
Optionally, the rotation speed of the wafer during rotation is 400rpm to 600 rpm.
Optionally, before the cleaning of the edge region of the wafer, the method further includes a step of pre-rinsing the wafer with deionized water.
As mentioned above, the method for improving the wafer point discharge defects of the invention is to perform hydrogen peroxide (H) on the edge of the wafer before the wet process 2 O 2 ) And cleaning to lead out the charges in the wafer quickly and avoid the point discharge defect caused by quick charge release due to the contact of the central area of the wafer and the liquid medicine in the subsequent wet process.
Drawings
Fig. 1 is a schematic diagram illustrating a point discharge defect in a conventional wet process.
FIG. 2 is a flowchart illustrating a method for improving the edge discharge defect of a wafer according to the present invention.
Fig. 3 shows a schematic diagram of charge derivation achieved by the method of the present invention.
Fig. 4 is a diagram of a wafer after the wafer is processed by a conventional wet process.
FIG. 5 is a diagram of a wafer after being processed by the method of the present invention.
Detailed Description
The following embodiments of the present invention are provided by way of specific examples, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 3. It should be noted that the drawings provided in the present embodiment are only schematic and illustrate the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
As shown in fig. 2, the present embodiment provides a method for improving a wafer tip discharge defect, the method comprising:
providing a wafer, wherein the wafer comprises a central area and an edge area surrounding the central area;
before the wet process is carried out, the edge area of the wafer is cleaned to increase the conductivity of the surface of the wafer.
Specifically, the cleaning solution used for cleaning the edge region of the wafer comprises hydrogen peroxide (H) 2 O 2 )。
In this embodiment, the edge region of the wafer is subjected to H 2 O 2 Cleaning can increase the conductivity of the surface of the wafer, thereby leading out the charges in the wafer and avoiding the connection between the central area of the wafer and the liquid medicine used in the subsequent processWhen touched, the electric charge is quickly released to burst, thereby avoiding the generation of point discharge defects.
Specifically, the flow rate of the cleaning solution is 0.1ml/s to 0.3 ml/s. In this embodiment, the uniformity of the rate can be ensured by controlling the flow rate of the cleaning solution.
Specifically, the method for cleaning the edge area of the wafer comprises the following steps: protecting the central area of the wafer by using a mask layer; and spraying the cleaning solution to the edge area by using a nozzle and rotating the wafer.
In this embodiment, the mask layer is used to cover the entire wafer, and then the mask layer formed in the edge region is removed, so as to protect the central region of the wafer.
Specifically, the rotation speed of the wafer during rotation is 400rpm to 600rpm (revolutions per second).
Specifically, before the cleaning of the edge area of the wafer, the method further includes a step of pre-rinsing the wafer with deionized water.
Fig. 4 and 5 show wafer maps (map) of the wafers of the control group and the experimental group. In performing the experiment, the control group included 2 wafers and was processed using the existing wet process, and the experimental results obtained were: one of the wafers has 8 defects, the other wafer has 1 defect, and the loss rate of the wafer is 100%; the experimental group includes 3 wafers and is processed by the method provided in this embodiment, and the obtained experimental results are: one of the wafers had 5 defects, and the other 2 wafers had no defects, with a wafer loss of 33.3%. Therefore, the processing method provided by the embodiment can improve the point discharge defects of the wafer and improve the yield of the wafer.
In summary, the method for improving the wafer edge discharge defect of the present invention is to perform hydrogen peroxide (H) on the edge of the wafer before the wet process 2 O 2 ) And cleaning to lead out the charges in the wafer quickly, thereby avoiding the point discharge defect caused by quick charge release due to the contact of the central area of the wafer and the liquid medicine in the subsequent wet process. Therefore, the invention effectively overcomes the defects in the prior artHas high industrial utilization value due to various defects.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (6)

1. A method for improving wafer point discharge defects, the method comprising:
providing a wafer, wherein the wafer comprises a central area and an edge area surrounding the central area;
and cleaning the edge area of the wafer to increase the conductivity of the surface of the wafer before the wet process.
2. The method as claimed in claim 1, wherein the cleaning solution used for cleaning the edge region of the wafer comprises hydrogen peroxide.
3. The method for improving the wafer point discharge defect as claimed in claim 1 or 2, wherein the flow rate of the cleaning solution is 0.1ml/s to 0.3 ml/s.
4. The method for improving the point discharge defects of the wafer as claimed in claim 3, wherein the method for cleaning the edge region of the wafer comprises:
protecting the central area of the wafer by using a mask layer;
and spraying the cleaning solution to the edge area by using a nozzle and rotating the wafer.
5. The method for improving the point discharge defect of the wafer as claimed in claim 4, wherein the rotation speed of the wafer is 400rpm to 600 rpm.
6. The method as claimed in claim 1, wherein the method further comprises a step of pre-rinsing the wafer with deionized water before cleaning the edge region of the wafer.
CN202210746061.7A 2022-06-28 2022-06-28 Method for improving wafer point discharge defect Pending CN115036207A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210746061.7A CN115036207A (en) 2022-06-28 2022-06-28 Method for improving wafer point discharge defect

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210746061.7A CN115036207A (en) 2022-06-28 2022-06-28 Method for improving wafer point discharge defect

Publications (1)

Publication Number Publication Date
CN115036207A true CN115036207A (en) 2022-09-09

Family

ID=83126913

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210746061.7A Pending CN115036207A (en) 2022-06-28 2022-06-28 Method for improving wafer point discharge defect

Country Status (1)

Country Link
CN (1) CN115036207A (en)

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