TW201226533A - Etching solution composition for ohmic contact layer and plat panel display device - Google Patents

Etching solution composition for ohmic contact layer and plat panel display device Download PDF

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TW201226533A
TW201226533A TW100147049A TW100147049A TW201226533A TW 201226533 A TW201226533 A TW 201226533A TW 100147049 A TW100147049 A TW 100147049A TW 100147049 A TW100147049 A TW 100147049A TW 201226533 A TW201226533 A TW 201226533A
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contact layer
ohmic contact
compound
composition
etchant composition
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TW100147049A
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TWI527881B (en
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Woo-Ram Lee
Suk Lee
Hyun-Kyu Lee
Eun-Won Lee
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Dongwoo Fine Chem Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

Disclosed herein is an etching solution composition for ohmic contact layer, including, based on a total weight of the composition: hydrogen peroxide (H2O2) 5 to 30 wt%; a fluorine-containing compound 0.01 to 5 wt%; a water-soluble cyclic amine compound 0.1 to 5 wt%; an inorganic acid 0.1 to 10 wt%; and residual water. In addition, a flat panel display device is also presented in this invention.

Description

201226533 六、發明說明： 【發明所屬之技術領域】 觸層的触刻劑組 本發明係有關於一種用於歐姆接 成物及平板顯示農置。 【先前技術】 中，形成歐姆接觸 阻，所述歐姆接觸 石夕（n+ a-Si:H)組 必要的，歐姆接觸 ，乾式餘刻技術因 且其因為需要很長 在半導體裝置和平板顯示裝置 層以減少半導體層和源/汲電極的電 層通常由摻有η型雜質的氫化非晶 成。蝕刻技術對形成歐姆接觸層是 層通常由乾式蝕刻技術形成。然而 為需要昂責的設備並不經濟實用， 時間而不具有生產性。 【發明内容】 因此，對本發明進行設計以解決上述問題，本發 明的目的在於提供一種用於歐姆接觸層的蝕刻劑組 成物及平板顯示裝置，藉此能夠使用濕式蝕刻技術蝕 刻平板顯示裝置上之歐姆接觸層。 本發明的另一目的在於提供一種用於歐姆接觸 層的蝕刻劑組成物，能夠提高經濟效率和生產率。 為了實現上述目的，本發明一方面提供一種用於 歐姆接觸層的蝕刻劑組成物，以組成的總重量計，所 述組成包括.過氧化氫（H2〇2) 5〜30 wt%、含氟化合 物0.01〜5 wt%、可溶於水的環胺化合物〇丨〜5 wt%、無 機酸0.1〜10 wt%和餘量的水。 3/14 201226533 由用 層。 =毛明另-方面提供—種平板顯示裝置，盆包括 於歐姆接觸層的餘刻劑組成物職刻的歐姆接觸 【實施方式】 在下文中，將詳細闡述本發明。 名“,本1明用於歐姆接觸層的㈣劑組成物，較佳地 ί刻推有〇型雜質的氫化非晶石夕（n+ a-Si:H)層。本 例中之n型雜f是指週期表的5β族元素，但。型雜 負亦可為其他材質如Ρ、AS ' Sb等。 ^ f發明用於歐姆接觸層的蝕刻劑組成物包括過 孔化氫（H2〇2)、含敦化合物、可溶於水的環胺化合 物、無機酸和水。 _本發明用於歐姆接觸層的蝕刻劑組成物中所包 3的過氧化氫（丨-]2〇2)是用於蝕刻歐姆接觸層的主要 的氧化劑。以組成的總量計’過氧化氫（H202)在组 ^中的含量為5〜30 wt%、較佳含量為7〜2 5 wt%。當過 氧化氳的含量低於5 wt%時，組成的蝕刻能力變得不 足，而當過氧化氫的含量高於3〇 wt%時，其蝕刻速率 過度增大，使得程序控制變得困難。 本發明用於歐姆接觸層的蝕刻劑組成物中所包 含的含氟化合物是通過水解離以產生氟離子（F+)的 化合物。由於含氟化合物影響矽（其為歐姆接觸層的 組成成分之一）的蝕刻速率，因此含氟化合物用於增 加歐姆接觸層的蝕刻速率。 201226533 以組成的總量計，含氟化合物在組成中的含量為 0.01〜5 wt%、較佳含量為0.05〜1 wt%。當含氟化合物 的含量低於0.01 wt%時，歐姆接觸層的蝕刻速率變慢 。同樣，當含氟化合物的含量高於5 wt%時，組成的 蝕刻能力並沒有提高，且會蝕刻佈置於歐姆接觸層下 面的資料線金屬薄膜從而引起線路短路，從而造成製 程的缺陷。 對含氟化合物沒有特別限制，只要其能夠用於相 關領域即可。然而，含氟化合物可選自由HF、NaF、 nh4f、NH4BF4、NH4FHF、KF、khf2、aif3和hbf4 組成的組，其中較佳為nh4fhf。 本發明用於歐姆接觸層的蝕刻劑組成物中所包 含的可溶於水的環胺化合物，用於在蝕刻歐姆接觸層 的過程中保護佈置於歐姆接觸層上的銅基金屬線。在 蝕刻歐姆接觸層的過程中必須要對佈置於歐姆接觸 層上的薄膜進行保護的原因如下：一般而言，先在歐 姆接觸層上形成源/汲電極，然後再實施蝕刻歐姆接 觸層的技術。因此，在|虫刻歐姆接觸層的過程中，對 源/汲電極的損害需降到最小。因此，用於歐姆接觸 層的蝕刻劑組成物需要包含用於保護源/汲電極的組 分。在本發明中，用於歐姆接觸層的钱刻劑組成物包 含可溶於水的環胺化合物的原因在於，源/汲電極一 般由銅基金屬組成。 以組成的總量計，可溶於水的環胺化合物在組成 中的含量為0.1〜5 wt%、較佳含量為0.〗〜1 wt%。當可 5/14 201226533 溶於水的環胺化合物的含量低於0.1 wt%時，佈置於 歐姆接觸層上的銅基金屬線被触刻’從而造成線路斷 開。另外，當可溶於水的環胺化合物的含量高於5 Wt% 時，歐姆接觸層的蝕刻速率變慢，且因此在歐姆接觸 層上形成殘餘物。 對可溶於水的環胺化合物沒有特別限制，只要其 能夠用於相關領域即可。然而，較佳地，可溶於水的 環胺化合物是具有1至3 0個碳原子的可溶於水的環胺 化合物。可溶於水的環胺化合物可選自由下列化合物 組成的組：苯並三β坐化合物、氨基四α坐化合物、咪唾 化合物、^丨°朵化合物、嘌吟化合物、σ比β坐化合物、0比 α定化合物、嗜丨11定化合物、吼各化合物、吼11各烧化合物 和°比洛σ林化合物。在此，氨基四α坐化合物的實施例可 包括氨基四唑、5-氨基-1-苯基四唑、5-氨基-1(1-萘基 )四α坐、丨-曱基-5-氨基四°坐、1,5-二氨基四α坐等。在這 些氨基四α圭化合物中，較佳選擇為氨基四11 坐。 本發明用於歐姆接觸層的蝕刻劑組成物中所包 含的無機酸通過控制組成的pH (即通過降低組成的 pH.)防止過氧化氫（H.2〇2 )分解，從而營造一個可# 刻歐姆接觸層的環境。 以組成的總量計，無機酸在組成中的含量為 0.1〜10 wt%、較佳含量為0.1〜1 wt%。當無機酸的含量 低於0.1 wt%時，控制組成pH的能力降低，導致歐姆 接觸層的蝕刻速率降低，從而加速過氧化氫（H202 )的分解。此外，當無機酸的含量高於10 wt%時，歐 6/14 201226533 觸層的?刻速率增大，但M成會對佈置於歐姆接 曰下面的薄骐產生不利影響，並降低化歐姆接觸層 f發明用於歐姆接觸層的蝕刻劑組成勺 a :水作為均衡而加人，以使組成的總量為丨⑼^ :對水沒有任何特別限制，但使用去離子朴wt/o 中，使用比電阻為18跡⑽或以上（«土。其 子去除的程度）的去離子水較佳。…不水中離 為了提高本發明用於歐姆接觸層的蝕 物的蝕刻能力，用於歐姆接觸層的蝕刻劑且成 -步包含相關領域中普遍習知的添加劑。較可進 組成的總量計，添加劑的含量為〇 〇〇〇1〜〇.〇丨。以 添加劑的實施例可包括表面活性劑、金 鎖劑（blocking agent)、防腐劑等。在此， 封 劑通過降低表面張力來增加㈣均勻性。表^面居性 的實施例可包括陰離子表面活性劑、陽離子表=生劑 劑、兩性離子表面活性劑和非離子表面活性劑。 ，可使用基於氟的表面活性劑作為表面活性劑。匕外 本發明提供-種平板顯示裝置，該平板顯 使用用於歐姆接觸層的蝕刻劑組成物而製造。"罝 示裝置可以是液晶顯示裝置或有機電致發光裝置‘、、員 本發明用於歐姆接觸層的蝕刻劑組成物可 濕式蝕刻技術蝕刻歐姆接觸層。此外，本發明用 姆接觸層的蝕刻劑組成物可提高經濟效率和生產率& 7/14 201226533 文中將參'日、?、以下實施例更加詳細地闡述本 > 了 ，這些實施例僅用以闡釋本發明，本發明 內，圍^不受限於此。本領域技術人員在本發明範圍 可對這些實施例適當地進行修改和改變。 列 1 至 8 :用於歐 根據下表1中所給出的成分和組成比製備用於歐 姆接觸層的㈣劑組成物，每-個用於歐姆接觸層的 蝕刻劑組成物的重量為ό kg。 、 【表1】201226533 VI. Description of the Invention: [Technical Field of the Invention] Touching Agent Group of Contact Layer The present invention relates to an agricultural device for ohmic connectors and flat panel displays. In the prior art, an ohmic contact resistance is formed, which is necessary for the ohmic contact (n+ a-Si:H) group, an ohmic contact, a dry-type technique, and because it is required to be long in a semiconductor device and a flat panel display device The layers of the layer to reduce the semiconductor layer and the source/germanium electrode are typically made of hydrogenated amorphous doped with n-type impurities. The etching technique is a layer formed by forming a ohmic contact layer, usually by a dry etching technique. However, equipment that requires high responsibilities is not economical, time-consuming and not productive. SUMMARY OF THE INVENTION Therefore, the present invention has been devised to solve the above problems, and an object of the present invention is to provide an etchant composition for an ohmic contact layer and a flat panel display device, whereby a flat display device can be etched using a wet etching technique Ohmic contact layer. Another object of the present invention is to provide an etchant composition for an ohmic contact layer which can improve economic efficiency and productivity. In order to achieve the above object, an aspect of the present invention provides an etchant composition for an ohmic contact layer, the composition comprising: hydrogen peroxide (H 2 〇 2) 5 to 30 wt%, fluorine-containing, based on the total weight of the composition The compound is 0.01 to 5 wt%, the water-soluble cyclic amine compound 〇丨 5 wt%, the inorganic acid 0.1 to 10 wt%, and the balance of water. 3/14 201226533 Used by layers. The invention provides a flat panel display device comprising an ohmic contact of a residual composition of the ohmic contact layer. [Embodiment] Hereinafter, the present invention will be described in detail. The "fourth agent composition" for the ohmic contact layer, preferably the hydrogenated amorphous austenite (n+ a-Si:H) layer of the yttrium-type impurity. In this example, the n-type impurity f is a 5β group element of the periodic table, but the type of heterogeneous may also be other materials such as ruthenium, AS ' Sb, etc. ^ f Invented etchant composition for ohmic contact layer including perforated hydrogen (H2 〇 2 a compound containing a water, a cyclic amine compound soluble in water, a mineral acid, and water. _ The hydrogen peroxide (丨-]2〇2) of the etchant composition for the ohmic contact layer of the present invention is The main oxidizing agent for etching the ohmic contact layer. The total amount of hydrogen peroxide (H202) in the group is 5 to 30 wt%, preferably 7 to 25 wt%, based on the total amount of the composition. When the content of cerium oxide is less than 5 wt%, the etching ability of the composition becomes insufficient, and when the content of hydrogen peroxide is more than 3% by weight, the etching rate thereof excessively increases, making program control difficult. The fluorine-containing compound contained in the etchant composition for the ohmic contact layer is a compound which is hydrolyzed to generate a fluoride ion (F+). The substance affects the etching rate of yttrium, which is one of the constituent components of the ohmic contact layer, and thus the fluorinated compound is used to increase the etching rate of the ohmic contact layer. 201226533 The content of the fluorine-containing compound in the composition is based on the total amount of the composition. 0.01 to 5 wt%, preferably 0.05 to 1 wt%. When the content of the fluorine-containing compound is less than 0.01 wt%, the etching rate of the ohmic contact layer becomes slow. Similarly, when the content of the fluorine-containing compound is higher than 5 wt% When %, the etching ability of the composition is not improved, and the metal film of the data line disposed under the ohmic contact layer is etched to cause a short circuit of the line, thereby causing defects in the process. The fluorine-containing compound is not particularly limited as long as it can be used for correlation. The fluorochemical compound may be selected from the group consisting of HF, NaF, nh4f, NH4BF4, NH4FHF, KF, khf2, aif3 and hbf4, among which nh4fhf is preferred. The etchant composition of the ohmic contact layer of the present invention A water-soluble cyclic amine compound contained in the material for protecting a copper-based metal wire disposed on the ohmic contact layer during etching of the ohmic contact layer. The reason why the film disposed on the ohmic contact layer must be protected during the ohmic contact layer is as follows: Generally, a source/germanium electrode is formed on the ohmic contact layer, and then a technique of etching the ohmic contact layer is performed. In the process of etching the ohmic contact layer, the damage to the source/germanium electrode needs to be minimized. Therefore, the etchant composition for the ohmic contact layer needs to contain a component for protecting the source/germanium electrode. In the present invention, the money engraving composition for the ohmic contact layer contains a water-soluble cyclic amine compound because the source/germanium electrode is generally composed of a copper-based metal. It is soluble in water in terms of the total amount of the composition. The content of the cyclic amine compound in the composition is 0.1 to 5 wt%, and the preferred content is 0.1 to 1 wt%. When the content of the cyclic amine compound soluble in water of 5/14 201226533 is less than 0.1 wt%, the copper-based metal wire disposed on the ohmic contact layer is etched' to cause the line to be broken. In addition, when the content of the water-soluble cyclic amine compound is higher than 5 Wt%, the etching rate of the ohmic contact layer becomes slow, and thus a residue is formed on the ohmic contact layer. The water-soluble cyclic amine compound is not particularly limited as long as it can be used in the related art. Preferably, however, the water-soluble cyclic amine compound is a water-soluble cyclic amine compound having 1 to 30 carbon atoms. The water-soluble cyclic amine compound may be selected from the group consisting of a benzotriazine compound, an aminotetra-α sitting compound, a stilbene compound, a compound, an anthraquinone compound, a σ ratio β-supplement compound, 0 is a compound of a certain amount, a compound of anthraquinone, a compound of ruthenium, a compound of ruthenium 11 and a compound of piroxime. Here, examples of the aminotetra-α-supplement compound may include aminotetrazole, 5-amino-1-phenyltetrazole, 5-amino-1(1-naphthyl)tetra-α, 丨-fluorenyl-5- Amino four-degree sitting, 1,5-diaminotetra-α sitting, etc. Among these aminotetraamide compounds, an amino group of 4 is preferably selected. The inorganic acid contained in the etchant composition for the ohmic contact layer of the present invention prevents decomposition of hydrogen peroxide (H.2〇2) by controlling the pH of the composition (i.e., by lowering the pH of the composition), thereby creating a ## Engraving the environment of the ohmic contact layer. The inorganic acid is contained in the composition in an amount of 0.1 to 10% by weight, preferably 0.1 to 1% by weight based on the total amount of the composition. When the content of the inorganic acid is less than 0.1% by weight, the ability to control the composition of the pH is lowered, resulting in a decrease in the etching rate of the ohmic contact layer, thereby accelerating the decomposition of hydrogen peroxide (H202). In addition, when the content of the inorganic acid is higher than 10 wt%, the etching rate of the contact layer of the Euro 6/14 201226533 is increased, but the M formation adversely affects the thin crucible disposed under the ohmic joint, and reduces the ohmicity. The contact layer f is invented for the etchant composition of the ohmic contact layer. A: Water is added as a balance so that the total amount of the composition is 丨(9)^: there is no particular limitation on water, but use deionized pt/o It is preferable to use deionized water having a specific resistance of 18 traces (10) or more (« soil. The degree of its removal). ...not immersed in order to improve the etching ability of the etched layer of the present invention for the ohmic contact layer, the etchant for the ohmic contact layer and the step-by-step include additives generally known in the related art. The amount of the additive is 〇 〇〇〇1~〇.〇丨, which is more than the total amount of the composition. Examples of the additive may include a surfactant, a blocking agent, a preservative, and the like. Here, the sealant increases (4) uniformity by reducing the surface tension. Examples of surface properties may include anionic surfactants, cationic surfactants, greening surfactants, zwitterionic surfactants, and nonionic surfactants. A fluorine-based surfactant can be used as a surfactant. The present invention provides a flat panel display device which is manufactured using an etchant composition for an ohmic contact layer. The "display device may be a liquid crystal display device or an organic electroluminescence device', the etchant composition for the ohmic contact layer of the present invention may be wet etched to etch the ohmic contact layer. In addition, the etchant composition of the present invention can improve economic efficiency and productivity by using the etchant composition of the contact layer. 7/14 201226533 The present invention will be described in more detail in the following examples. In order to explain the present invention, the present invention is not limited thereto. Modifications and variations of these embodiments may be appropriately made by those skilled in the art within the scope of the invention. Columns 1 to 8: For the preparation of the (iv) agent composition for the ohmic contact layer according to the composition and composition ratios given in Table 1 below, the weight of the etchant composition for each ohmic contact layer is ό Kg. , 【Table 1】

Η2〇2 含氣化合 (wt%) 物(Wt0/o) 實施例1 10 B-1 0.5 實施例2 7 B-1 0.5 實施例3 10 B-1 0.5 比較實施例1 10 B-1 0.5 比較實施例2 10 比較實施例3 10 _ . 比較實施例4 6 B-2 1 比較實施例5 15 B-3 6 比較實施例6 20 B-4 2 比較實施例7 4 B-5 3 比較實施例8 32 B-6 4 可溶於水的 環胺化合物 (wt%) C-1 C-3 C-4 C-6 B-l ： NH4F C-1 C-1 C-1 C-1 C-1 C-2 C-5Η2〇2 gas-containing compound (wt%) (Wt0/o) Example 1 10 B-1 0.5 Example 2 7 B-1 0.5 Example 3 10 B-1 0.5 Comparative Example 1 10 B-1 0.5 Comparison Example 2 10 Comparative Example 3 10 _ . Comparative Example 4 6 B-2 1 Comparative Example 5 15 B-3 6 Comparative Example 6 20 B-4 2 Comparative Example 7 4 B-5 3 Comparative Example 8 32 B-6 4 Water-soluble cyclic amine compound (wt%) C-1 C-3 C-4 C-6 Bl : NH4F C-1 C-1 C-1 C-1 C-1 C- 2 C-5

B-2 : HF 8/14 無機酸 (wt%) 0.5 0.5 0.5 0.5 0.5 0.5 4 去树隹子水B-2 : HF 8/14 inorganic acid (wt%) 0.5 0.5 0.5 0.5 0.5 0.5 4

201226533 β_3 : NaF β-5 ： KF .氨基四tr坐 C-3 :苯並三唑 C-5 : n比略 D-l :鹽酸 D-3 ··硝酸 B'4 : nh4bf4 β-6 ： KHF2 C-2 : 5-氨基苯基四唑 C-4 :吲哚 C-6 :吡咯啉 D_2 :硫酸 D-4 :碟酸 j 貝Ί试貫祐.例：言干 _ 特性搢 的飯刻劑組成物 使用上表1中所給出的用於歐姆接觸層的蝕刻劑 、且:物實施I虫刻摻有η型雜質的氯化非晶矽（計 •Η)層的過私。在該飯刻過程中，將每個用於歐 姆接觸層的_劑組成物的溫度設定在約贼，但若 需要，用於歐姆接觸層的關齡成物的最佳溫度可 視其它過程條件而變化。其㈣時間可視其姓刻溫度 而變化，且一般可為30〜18〇秒。在該測試中，蝕刻過 程實施60秒。使用SEM(型號：s_4，由Hjtaeh丨錢 公司製造）檢驗在該蝕刻過程中蝕刻的摻有n型雜質 的氫化非晶矽（n+a_Si:H)層的剖面，其結果在下表201226533 β_3 : NaF β-5 : KF . Amino tetra-tr sitting C-3 : benzotriazole C-5 : n ratio slightly Dl : hydrochloric acid D-3 · · nitric acid B'4 : nh4bf4 β-6 : KHF2 C- 2 : 5-aminophenyltetrazole C-4 : 吲哚C-6 : pyrroline D 2 : sulfuric acid D-4 : dish acid j Ί Ί Ί . . . . . . . . _ _ _ _ _ _ _ _ _ 饭 饭 饭 饭 饭 饭The etchant for the ohmic contact layer given in Table 1 above was used, and the chlorination of the amorphous ruthenium (yttrium) layer doped with the n-type impurity was carried out. During the meal, the temperature of each of the composition for the ohmic contact layer is set to about thief, but the optimum temperature for the aging contact layer can be determined by other process conditions if desired. Variety. The (iv) time may vary depending on the temperature of the surname, and may generally be 30 to 18 leap seconds. In this test, the etching process was carried out for 60 seconds. A cross section of a hydrogenated amorphous germanium (n+a_Si:H) layer doped with an n-type impurity etched in the etching process was examined using an SEM (model: s_4, manufactured by Hjtaeh Co., Ltd.), and the results are shown in the following table.

【表2】 省虫刻能力 ----- 剖面 __實施例1 可能 良好 9/14 201226533 實施例2 實施例3 施例1 比較實施例2 _ -- 施例3 貧施例4 施例5 土較y施例6 實施例7 實施例8 可能[Table 2] Insect Resistant Ability ---- Section _ Example 1 Possible Good 9/14 201226533 Example 2 Example 3 Example 1 Comparative Example 2 _ -- Example 3 Poor Example 4 Example 5 soil than y example 6 embodiment 7 example 8 possible

可能 參照表2 可能 ——-—__ _J能 不可能 ---- --- 不可能 ---------- 可能 良好 X 良好 X 較差 0 較差 0 ... 較差 0 較差 X 較差 0 較差 〇 較差 0 較差 0 ，貝々匕列1芏j的用；^歐姆寺 觸層的姓刻劑組成物對摻有n型雜f的氫化非晶石夕 n+a-Si:H)層具有極好的触刻特性，由實施例⑴白 用於歐姆接觸層祕_組成物_的摻有n型雜 t化非㈣GW)層的剖面良好，且沒有 現殘餘物。因此，可以抽作^ 且/又虿ii^ ^ ^ ( n+ a-Si :H ) J, ^ 钮刻劑組成物能夠提供極好=二=姆接觸層含 )、線性圖案和最佳的_=形剖面（鄉^爾 進一步地，參照表2 ,可、 3的用於歐姆制層的，^看出’比較實施例Ϊ至 型雜質的氫化非晶矽（n+ a、s/ 勿不能蝕刻摻有n 至8的用於歐姆接觸層的蝕 層，比較實施例4 型雜質的氫化非晶矽（n+ A =組成物可蝕刻摻有η 有η型雜質的氫化非晶矽 ^·Η)層，但其蝕刻的摻 a Sl:H)層的剖面較差 >0/14 201226533 物ί1施例5至s的用於歐姆接觸層的蝕刻劑組成 := 參:n型雜質的氣化非晶…一siH): 產生殘釭物。因此，難以將比較實施例丨至8的用於 歐姆接觸層㈣刻劑組成物應用於細4換有質 的氫化非晶石夕（n+a_si:H)層的過程。 雜’ 同時，圖1和圖2顯示了由實施例〗的用於歐姆接 觸層的飾刻劑組成物所钮刻的摻有η型雜質的氫化非 晶石夕（n+ a-Si:Η )層的斷面的照片。 參照圖1和圖2，可以看出，實施例1的用於歐姆 接觸層的蝕刻劑組成物對摻有η型雜質的氫化非晶矽 (n+ a-Si.H)層具有極好的钱刻特性，由實施例1的 =於歐姆接觸層的蝕刻劑組成物所蝕刻的摻有n型雜 質的氫化非晶矽（ n+a_Si:H)層的剖面良好，且沒有 =現殘餘物。因此，可以推斷，針對摻有η型雜質的 氫化非晶矽（n+a_Si:H)層，本發明用於歐姆接觸層 的蝕刻劑組成物能夠提供極好的錐形剖面、線性圖案 和最佳的触刻速率。 圖3和圖4顯示了由比較實施例丨的用於歐姆接觸 層的蝕刻劑組成物所蝕刻的摻有n型雜質的氫化非晶 石夕（n+ a-Si:H )層的斷面的照片。 參照圖3，可以看出，比較實施例1的用於歐姆接 觸層的蝕刻劑組成物對摻有n型雜質的氫化非晶矽（ n+ a-Si:H)層的|虫刻剖面較差。另外，參照圖4，可 以看出，比較實施例丨的用於歐姆接觸層的蝕刻劑組 11/14 201226533 成物在蝕刻摻有η型雜質的氫化非晶矽（n+ 層後產生殘餘物。因此，難以將比較實施例丨的用於 歐姆接觸層的餘刻劑組成物應用於餘刻推有η型雜質 的氫化非晶矽（n+a-Si:H)層的過程。 如上所述，本發明用於歐姆接觸層的蝕刻劑组成 物可濕式飯刻歐姆接觸層。此外，本發明用於歐姆接 觸層的蝕刻劑組成物可提高經濟效率和生產率。 儘s出於闡釋的目的公開了本發明的較佳實施 例，但本領域技術人員應瞭解，在不背離如所附發明 說明書所揭示的本發㈣和精神内，對本發明所 做的各種改進、增加和替代都是可能的。 【圖式簡單說明】 圖丨和圖2為由實施例】的用於歐姆接觸層的蝕 刻劑組成物钮刻摻冑n型雜質的氫化非晶石夕（以i況 )層的斷面的照片。 圖3和圖4為由比較實施例丨的用於歐姆接觸層 的蝕刻劑組成物蝕刻摻有n型雜質的氫化非晶矽（n+ a_Sl:H )層的斷面的照片。 【主要元件符號說明】 12/14May refer to Table 2 Possible ——————__ _J can be impossible ----- --- Impossible --------------- Probably good X Good X Poor 0 Poor 0 ... Poor 0 Poor X Poor 0 Poor 〇 Poor 0 Poor 0, Beckham column 1芏j; ^ ohm temple touch layer surname composition for hydrogenated amorphous austenite n+a-Si:H) The layer has excellent etch characteristics, and the cross section of the embodiment (1) used for the ohmic contact layer _ composition-doped n-type hetero-t-type non-(tetra) GW) is good, and there is no residue. Therefore, it can be extracted as ^ and / 虿 ii ^ ^ ^ ( n + a-Si : H ) J, ^ button engraving composition can provide excellent = two = m contact layer containing), linear pattern and the best _ = shape profile (further, refer to Table 2, can be used for the ohmic layer, 3 see 'Comparative Example Ϊ-type impurity hydrogenated amorphous 矽 (n + a, s / can not be etched A n-to-8 etched layer for an ohmic contact layer, a hydrogenated amorphous germanium of Comparative Example 4 impurity (n+ A = composition etchable with n-type n-type impurity hydrogenated amorphous 矽^·Η) Layer, but the etched a Sl:H) layer has a poor cross section>0/14 201226533 ί1 Example 5 to s etchant composition for the ohmic contact layer: = Reference: gasification of the n-type impurity Crystal...a siH): Residues are produced. Therefore, it is difficult to apply the ohmic contact layer (four) engraving composition of Comparative Example 丨 to 8 to the process of fine-grained hydrogenated amorphous austenite (n+a_si:H) layer. At the same time, FIG. 1 and FIG. 2 show hydrogenated amorphous austenite (n+ a-Si: Η) doped with n-type impurities by the engraving composition for the ohmic contact layer of the embodiment. A photo of the section of the layer. 1 and 2, it can be seen that the etchant composition for the ohmic contact layer of Embodiment 1 has excellent money for a hydrogenated amorphous germanium (n+ a-Si.H) layer doped with an n-type impurity. The engraving characteristics were good from the cross section of the hydrogenated amorphous germanium (n+a_Si:H) layer doped with the n-type impurity etched by the etchant composition of the ohmic contact layer of Example 1, and there was no = current residue. Therefore, it can be inferred that the etchant composition for an ohmic contact layer of the present invention can provide an excellent tapered profile, a linear pattern, and the most for a hydrogenated amorphous germanium (n+a_Si:H) layer doped with an n-type impurity. Good touch rate. 3 and 4 show cross sections of a hydrogenated amorphous austenite (n+ a-Si:H) layer doped with an n-type impurity etched by an etchant composition for an ohmic contact layer of Comparative Example 丨. photo. Referring to Fig. 3, it can be seen that the etchant composition for the ohmic contact layer of Comparative Example 1 is inferior to the hydrogenated amorphous germanium (n+ a-Si:H) layer doped with n-type impurities. In addition, referring to FIG. 4, it can be seen that the etchant group 11/14 201226533 for the ohmic contact layer of Comparative Example 在 produces a residue after etching the hydrogenated amorphous germanium (n+ layer) doped with the n-type impurity. Therefore, it is difficult to apply the residual agent composition for an ohmic contact layer of Comparative Example 应用于 to a process of engraving a hydrogenated amorphous germanium (n+a-Si:H) layer having an n-type impurity. The etchant composition for the ohmic contact layer of the present invention can be wet-quenched ohmic contact layer. Furthermore, the etchant composition for the ohmic contact layer of the present invention can improve economic efficiency and productivity. The preferred embodiments of the present invention are disclosed, but those skilled in the art will appreciate that various modifications, additions and substitutions of the present invention are possible without departing from the spirit and scope of the invention as disclosed in the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 2 and FIG. 2 are diagrams showing a hydrogenated amorphous austenite layer of an etchant composition for an ohmic contact layer of an ohmic contact layer. Photo of the face. Figure 3 and Figure 4 are the ratio An etchant composition for etching the ohmic contact layer of Example Shu n-type impurity doped hydrogenated amorphous silicon (n + a_Sl: H). Photograph of cross section of the main element layer [REFERENCE SIGNS 12/14

Claims (1)

201226533 七、申請專利範圍： 1 · 一種用於歐姆接觸層的银刻劑組成物，以所述組成的 總重量計，所述組成包括： 過氧化氫5〜30 wt% ; 含氟化合物0.01〜5 wt°/〇 ; 可溶於水的環胺化合物0.1〜5 wt°/〇 ; 無機酸0.1〜10 wt% ;及 餘量的水。 2. 如申請專利範圍第1項所述之用於歐姆接觸層的蝕刻 劑組成物，其中該歐姆接觸層是摻有η型雜質的氫化 非晶矽層。 3. 如申請專利範圍第1項所述之用於歐姆接觸層的蝕刻 劑組成物，其中該含氟化合物是由HF、NaF、NH4F、 NH4BF4、NH4FHF、KF、KHF2、A1F3 和 HBF4 所組成 o 4. 如申請專利範圍第1項所述之用於歐姆接觸層的蝕刻 劑組成物，其中該可溶於水的環胺化合物選自由下列 化合物組成的組合：苯並三β坐化合物、氨基四α坐化合 物、米唾化合物、叫卜朵化合物、嗓吟化合物、υ比唾化 合物、D比咬化合物、嘴咬化合物、B比洛化合物、π比咯 烧化合物和吼11 各。林化合物。 5. 如申請專利範圍第1項所述之用於歐姆接觸層的蝕刻 劑組成物，其中該無機酸選是由鹽酸、硫酸、硝酸和 石舞酸所組成。 13/14 201226533 6. —種平板顯示裝置，該平板顯示裝置包括由申請專利 範圍第丨項所述之用於歐姆接觸層的蝕刻劑組成物所 蝕刻的歐姆接觸層。 14/14201226533 VII. Patent application scope: 1 · A silver engraving composition for an ohmic contact layer, the composition comprising: hydrogen peroxide 5~30 wt%; fluorine-containing compound 0.01~ 5 wt ° / 〇; water-soluble cyclic amine compound 0.1~5 wt ° / 〇; inorganic acid 0.1 ~ 10 wt%; and the balance of water. 2. The etchant composition for an ohmic contact layer according to claim 1, wherein the ohmic contact layer is a hydrogenated amorphous germanium layer doped with an n-type impurity. 3. The etchant composition for an ohmic contact layer according to claim 1, wherein the fluorine-containing compound is composed of HF, NaF, NH4F, NH4BF4, NH4FHF, KF, KHF2, A1F3, and HBF4. 4. The etchant composition for an ohmic contact layer according to claim 1, wherein the water-soluble cyclic amine compound is selected from the group consisting of a benzotriazine compound, an amino group The α-supplement compound, the rice-salt compound, the sputum compound, the sputum compound, the sputum-salt compound, the D-bite compound, the mouth bite compound, the B-bilo compound, the π-pyrrol compound, and the oxime 11 are each. Forest compound. 5. The etchant composition for an ohmic contact layer of claim 1, wherein the inorganic acid is selected from the group consisting of hydrochloric acid, sulfuric acid, nitric acid, and lithosic acid. 13/14 201226533 6. A flat panel display device comprising an ohmic contact layer etched by an etchant composition for an ohmic contact layer as described in the scope of the patent application. 14/14
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