TW201204874A - Etching solution composition for metal layer comprising copper and titanium - Google Patents

Etching solution composition for metal layer comprising copper and titanium Download PDF

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Publication number
TW201204874A
TW201204874A TW100115191A TW100115191A TW201204874A TW 201204874 A TW201204874 A TW 201204874A TW 100115191 A TW100115191 A TW 100115191A TW 100115191 A TW100115191 A TW 100115191A TW 201204874 A TW201204874 A TW 201204874A
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composition
group
persulfate
acid
fluoride
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TW100115191A
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Chinese (zh)
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Min-Ki Lim
O-Byoung Kwon
Yu-Jin Lee
In-Ho Yu
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Dongwoo Fine Chem Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

Disclosed is an etching solution composition for a metal layer including copper and titanium, which includes, based on the total weight of the composition, 5 to 20 wt% of a persulfate, 0.01 to 2 wt% of a fluorine compound, 1 to 10 wt% of one or more selected from among an inorganic acid, an inorganic acid salt, and mixtures thereof, 0.3 to 5 wt% of a cyclic amine compound, 0.1 to 5 wt% of p-toluenesulfonic acid, and the remainder being water.

Description

201204874 六、發明說明： [參考相關申請案] 本案請求韓國專财請案第Κ)·2_·0039823號申靖 【發明所屬之技術領域】 >、 物， 晶擊)之閑極、猶極2=’。特別為薄膜電 【先前技術】 線之==體裝置及平板顯示器中，在基板上形成金屬布 ϊ二地包括使用濺錢而形成金屬層、施加―、 吏用*光及頒影而在一選定區上形成光阻、 此外，在各項個別處理步驟之前或之生=χ, 驟° _處理運用光_為遮罩，使==處理步 ,早使侍金屬層留在選定區 刻υ地包括使用·之乾餘刻或使用钱刻液之祕 針對半導體裝置及平板顯示器， r汲極陣列布線係由包括具有低電阻丄導電= 屬層组成。但謝問題，原因在於由於在二= 中，形成小丘而造成與另一導電屏 ッ驟 化物層而形成絕緣層。因此，揭示;:雔=觸氧 之問極、源極脑陣列布線、及電極及鈦之又層作為抓 雙==層應使_同 ，物應主要包括基於過=::::= ^乳之勤m組成物。以基於過氧化氫之_岐成ς 3/11 2U1204874 可月b刀解而儲存期短。以基於臭氧之 麵刻速率緩慢且組錢縣時間之經 為例’餘刻液組成物 蝕刻液組成物為例， 過變不穩定。 【發明内容】 其允=行目的係提供一種綱液組成物， 飯刻。 ^金屬層_，特別銅/鈦雙層之總濕 不含的係提供―_刻液組成物，其甚至 本發明之第:曰而針對鋼具有快速钱刻速率。 化蝕刘的知提供—種蝕刻液組成物，其可簡 1匕蝕刻處理步驟且改進生產力。 、J間 本發明之第四目的係提供— 成快速_速率及—致的t、。種烟賴絲，其可達 η审^明之第五目的係提供—種朗餘成物，其不合 貝褒没備且侧時無需使訂卩貴的設備。 /、曰 本發明之第六目的储供—魏舰組絲，並可 利地施用至大尺寸顯示面板，如此產生經濟效益。" 本發明之第七目的係提供一種飯刻液組成物， 含鋼及欽之金屬層外，可钱刻用於像素電極之IZQ、或 a-IT〇。 一 本發明之-g樣係提供—種含銅及鈦之金屬層用儀刻 液組成物，以該組成物總重為基準，包括5至2〇 ^(%過^ 酸鹽’ 0.01至2 wt%氣化合物，i S 1〇 wt%選自於無機酸: 無機酸鹽、及其混合物中之一者或多者，〇 3至5 環狀 胺化合物，〇·1至5 wt%對甲苯磺酸，及剩餘為水。。衣 【實施方式】 4/11201204874 VI. Description of invention: [Reference to relevant application] This case requests the Korean special account for the third case)·2_·0039823 Shen Jing [Technical field of invention] >, object, crystal strike) 2='. In particular, for thin film electricity [prior art] in the body == body device and flat panel display, the formation of metal cloth on the substrate includes the use of splashing money to form a metal layer, applying -, using *light and filming in one A photoresist is formed on the selected area, and in addition, before or after each individual processing step, χ, _ treatment uses light _ as a mask, so that == processing step, leaving the metal layer in the selected area. The ground includes the use of the dry or the secret of the use of money engraving for semiconductor devices and flat panel displays, r-pole array wiring consists of including a low-resistance 丄 conductive = genus layer. However, the problem is due to the fact that in the second =, a hillock is formed to form an insulating layer with another conductive screen. Therefore, reveal;: 雔 = oxygen contact pole, source brain array wiring, and electrode and titanium layer as a doublet == layer should be _ the same, the object should mainly include based on over =::::= ^Mizhiqin m composition. The hydrogen storage-based _ 岐 ς ς 3/11 2U1204874 can be used for a short period of time. Taking the ozone-based surface engraving rate slowly and the group time of the group as an example, the composition of the etching liquid composition etching solution is an example, and the over-variation is unstable. SUMMARY OF THE INVENTION The purpose of the line is to provide a composition of a liquid, a meal. ^ Metal layer _, the total wet/existing copper/titanium double layer system does not contain the _ etch composition, which even the first aspect of the invention: 具有 has a fast money engraving rate for steel. The knowledge of the etched etch provides an etchant composition that simplifies the etching process and improves productivity. The fourth object of the present invention is to provide a fast _ rate and a t-. The fifth purpose of the tobacco lyrics is to provide a kind of ramification, which is not suitable for the equipment. /, 第六 The sixth purpose of the present invention is the storage and supply of the Wei Shipbuilding wire, which can be advantageously applied to a large-sized display panel, thus generating economic benefits. < The seventh object of the present invention is to provide an IZZQ, or a-IT〇, which can be used for a pixel electrode, in addition to a metal layer containing steel and a metal. A -g sample of the present invention provides a composition for a metal layer containing copper and titanium, based on the total weight of the composition, including 5 to 2 〇 ^ (% of the acid salt '0.01 to 2 The wt% gas compound, i S 1 〇 wt% is selected from the group consisting of inorganic acids: one or more of inorganic acid salts, and mixtures thereof, 〇3 to 5 cyclic amine compounds, 〇·1 to 5 wt% p-toluene Sulfonic acid, and the remainder is water. Clothing [embodiment] 4/11

S 201204874 後文中將針對本發明作詳細說明。 依據本發明之含銅及鈦之金屬層用敍刻液組成物包括 過硫酸鹽、氟化合物、選自於無機酸、無機酸鹽、及其混 合物中之-者或多者、環狀胺化合物、對甲苯石黃酸、及水。 包含於依據本發明之蝕刻液組成物中之過硫酸鹽 銅層钱刻用之主要氧化劑，且該組成物總重為基準，其用 量為5%至20 wt%，及較佳7%至18 wt%。當此種成分^含 量落入於前述範圍内時，含銅層係以適量钱刻，且飯刻輪 廓情況變優異。 過硫酸鹽可選自於由過硫酸録(Aps)、過硫酸納 及過硫酸鉀(PPS)所組成之群組。 /包含於依據本發明之姓刻液組成物中之氣化合物主要 係用來_含鈦、IZ0、或a_IT0之—層，且以組成物總重 為基準，係以0.01%至2 wt%及較佳0.05%至1 wt%之數量 添加。，此種成分之含量係落人於前述範圍内時，含欽層 =以適量_ ’且㈣輪廓情況變優異。當此種成分之含 =係低於前述下限時’含鈦層之_速率可能減低，且可 此產^朗殘質。相反地’ t此賊分之含量係超過前述 上限時，基板諸如玻璃及含矽絕緣層可能受損。 氣化合物係指可解離成為氟離子或多原子氟離子之化 ，物:且係選自於由氟化銨、氟化納、氟化卸、氟化氮銨、 氟化氫鈉、及氟化氫鉀所組成之群組。 包含於依據本發明之蝕刻液組成物中之 t無機㈣:及其混合财之—者❹者可氧化與刻 3 ’3層，且可氧化含鈦層。以組成物總重為基準，選自於 …機酉夂、無機_、及其混合物中之—者或多者可以1%至 5/11 201204874 10wt〇/。及較佳2%至？wt%之數量使用。 八 係落入於前述範圍時，含銅層及含鈦“ 時，触刻速率減量係低於前述下限 吳。相反地，纽軸分之含量細 能發生祕，光阻可能裂開而形縫 = 入裂縫，造成導線非期魏短路。 液可滲 成之=酸可選自於峨、硫酸、魏、及過氣酸所組 無機酸鹽可選自於由确酸鹽、硫酸鹽 氣酸鹽所組成之群組。 1及過 包含於依據本發明之钱刻液組成物中之環狀胺化 W刻含銅層時可形成一輪廓。以組成物總重為基準，環 狀月女化合物係以〇.3%至5 wt%及較佳〇.5%至3心之數量 ，用。當此種成分之含量係落人於前述範圍時，可形成適 虽銅侧速率及錐角，且可有效地控她刻程度。 —環狀胺化合物係選自於由5_胺基时、甲苯基三唾、 笨并二唑、及曱基三唑所組成之群組。 包含於依據本發明之關液組成物之對甲苯確酸係用 來防止朗特性由於侧劑本身的老化造成细劑組成的 改變而被修改’以及絲使得㈣劑可儲存長時間。以組 成物總重為基準，對f苯績酸之含量為〇1%至5 較 佳為㈣至3 wt%。t對甲苯魏之含量係低於G1 wt% 時，難⑽止因_劑本身的老化造成_劑組成的改 ，艾又復田其含量係大於5 wt%時，能夠防止因蚀刻劑本身 的老化造成綱劑組成的改變，但出現過钱，因而無法獲 6/11S 201204874 The present invention will be described in detail later. The composition for a metal layer containing copper and titanium according to the present invention comprises a persulfate, a fluorine compound, one or more selected from the group consisting of inorganic acids, inorganic acid salts, and mixtures thereof, and cyclic amine compounds. , p-toluene, and water. a primary oxidizing agent for use in the persulfate copper layer in the composition of the etching solution according to the present invention, and the total weight of the composition is based on the amount of 5% to 20% by weight, and preferably 7% to 18% Wt%. When the content of such a component falls within the above range, the copper-containing layer is engraved with an appropriate amount of money, and the condition of the meal is excellent. The persulfate may be selected from the group consisting of persalt sulfate (Aps), sodium persulfate, and potassium persulfate (PPS). The gas compound contained in the composition of the surname according to the present invention is mainly used for the layer containing titanium, IZ0, or a_IT0, and is 0.01% to 2 wt% based on the total weight of the composition. It is preferably added in an amount of 0.05% to 1% by weight. When the content of such a component falls within the above range, the inclusion layer has an excellent amount of _ ' and (4) contour. When the content of such a component is lower than the aforementioned lower limit, the rate of the titanium-containing layer may be lowered, and the residue may be produced. Conversely, when the content of the thief exceeds the aforementioned upper limit, the substrate such as glass and the ytterbium-containing insulating layer may be damaged. A gas compound is a compound which can be dissociated into a fluoride ion or a polyatomic fluoride ion, and is selected from the group consisting of ammonium fluoride, sodium fluoride, fluorination, ammonium fluoride, sodium hydrogen fluoride, and potassium hydrogen fluoride. Group of. The inorganic (IV) contained in the composition of the etching solution according to the present invention: and its combination can oxidize and engrave 3'3 layers, and can oxidize the titanium-containing layer. Based on the total weight of the composition, one or more selected from the group consisting of: 酉夂, inorganic _, and mixtures thereof may be 1% to 5/11 201204874 10wt〇/. And preferably 2% to? The amount of wt% is used. When the eight systems fall within the above range, when the copper-containing layer and the titanium-containing layer are used, the etch rate reduction is lower than the lower limit Wu. Conversely, the content of the new axis can be secreted, and the photoresist may crack and form a seam. = into the crack, causing the wire to be non-period short-circuited. The liquid can be infiltrated into = acid can be selected from the group consisting of barium, sulfuric acid, Wei, and peroxyacids. The mineral acid salt can be selected from the acid salt, sulfate acid a group consisting of salts 1 and a cyclic aminated W-containing copper layer contained in the composition of the money engraving composition according to the present invention can form a contour. Based on the total weight of the composition, the ring-shaped female The compound is used in an amount of from 3%.3% to 5% by weight and preferably from 5% to 5%. When the content of such a component falls within the above range, the copper side rate and the taper angle can be formed. And the degree of engraving can be effectively controlled. - The cyclic amine compound is selected from the group consisting of 5-amino, tolyltris, benzoxazole, and decyltriazole. The p-toluene acid of the liquid composition of the present invention is used to prevent the Lang characteristics from being changed due to the deterioration of the composition of the side agent itself. Change the 'and silk to make the (four) agent can be stored for a long time. Based on the total weight of the composition, the content of f-benzene acid is 〇1% to 5, preferably (four) to 3 wt%. The content of t-toluene is low. When G1 wt%, it is difficult (10) to stop due to the aging of the agent itself, and the composition of the agent is changed. When the content of Ai Futian is more than 5 wt%, it can prevent the change of the composition of the agent due to the aging of the etchant itself, but There was money, so I could not get 6/11

S 201204874 得優異的輪廓。 包含於依據本發明之蝕刻液組成物中之水為去離子 水’其係朗於半導體製程處理，及其具有至少18百萬歐 姆·厘米_·)之電阻係S。以組成物總重為基準 ，添加 水作為剩餘，使得蝕刻液組成物總重變成1〇〇。 人除了前述成分外，依據本發明之蝕刻液組成物更可包 3選自於㈣控制劑、界面活性劑、整合劑及防钱劑中之 一者或多者。 本發明之蝕刻液組成物係有效地用於蝕刻含鋼及鈦之 金屬層’制為銅/鈦雙層。又復此種㈣餘成 地用於蝕刻IZO或a_iT〇。 > ▲列舉下列實施例及測試例來舉例說明本發明，但非解 #為限制本發明，而可提供更明白瞭解本發明。 貫施例1及比較例1:蝕刻液組成物之製備 使用如下表1顯示之成分以所示數量，製備180公斤 的钱刻液組成物。 表1S 201204874 has an excellent silhouette. The water contained in the composition of the etching solution according to the present invention is deionized water, which is subjected to a semiconductor process, and has a resistance system S of at least 18 million ohm·cm. Based on the total weight of the composition, water was added as the remainder so that the total weight of the etchant composition became 1 Torr. In addition to the foregoing components, the etchant composition according to the present invention may further comprise 3 or more selected from the group consisting of: (4) a controlling agent, a surfactant, an integrator, and an anti-money agent. The etching liquid composition of the present invention is effectively used for etching a metal layer containing steel and titanium to form a copper/titanium double layer. This type of (4) is used to etch IZO or a_iT〇. The following examples and test examples are given to illustrate the invention, but are not intended to limit the invention, but may provide a better understanding of the invention. Example 1 and Comparative Example 1: Preparation of Etching Liquid Composition A composition of 180 kg of the money engraving liquid was prepared in the amounts shown using the components shown in Table 1 below. Table 1

水water

APS ABF HN〇3 ΑΤΖ PTA APS :過硫酸銨 ABF :氟化氫銨 ATZ : 5-胺基四唑PTA :對曱苯磺酸 測试例：蝕刻液組成物性質之評估 7/11 201204874 形成S玻璃上’銅層形成在SiNx層上’而欽層 的基板使用錯x光阻係以預定圖案施加在鈦層上，所形成 試樣。鑽切割成55〇毫米x 65〇毫米，如此製作成 <钮刻性質之評估> 射例1及比較例1各自之韻刻液組成物導入噴灑楚 器(ETCHER 鮮 t:，接著推二後酿熱至25°c溫度。隨後讓溫度達到30土0-1 樣放置;^ 時間係基於4G%EPD設定。試 去離mi喷獲以該組成物。钱刻完成後，試樣以 用光阻及使用熱風乾燥器乾燥’其後光阻(PR)係使 (SEMXS 去除。清潔與乾燥後，使用掃描電子顯微鏡 結果顯示於下表^自日立公司陳CH〇)評估钮刻性質。 <儲存性質之評估> “貧施例1及比較例1之姓刻液組成物以大量势備，及 參考_。參伽後剩餘之罐 列定日數(此處為5日），然後於參考餘 碰炎i ’、件下，糟儲存钱刻液組成物進行敍刻。其結果 係與參考餘刻結果作比較。 表2 韻刻性皙 實施例1 ----i(山只 ◎ I 比較例1 」 ◎ 儲存性質APS ABF HN〇3 ΑΤΖ PTA APS: Ammonium Persulfate ABF: Ammonium Bifluoride ATZ: 5-Aminotetrazole PTA: p-Toluenesulfonic Acid Test Example: Evaluation of the Properties of Etchant Compositions 7/11 201204874 Forming S Glass The 'copper layer was formed on the SiNx layer' and the substrate of the enamel layer was applied to the titanium layer in a predetermined pattern using a staggered photoresist system to form a sample. The drill was cut into 55 mm x 65 mm, and the result was evaluated as < evaluation of the buttoning property> The rhyme composition of each of the example 1 and the comparative example 1 was introduced into the sprayer (ETCHER fresh t:, then push two After brewing heat to a temperature of 25 ° C. Then let the temperature reach 30 soil 0-1 sample placement; ^ time is based on 4G% EPD setting. Try to remove the composition from the mi. After the money is completed, the sample is used Photoresist and drying with a hot air dryer 'Subsequent photoresist (PR) system (SEMXS removal. After cleaning and drying, the results of scanning electron microscopy are shown in the table below ^ from Hitachi, Ltd.). "Evaluation of storage properties" "The application of the engraved composition of the poor example 1 and the comparative example 1 is in a large amount, and reference _. The remaining number of cans after the gamma is listed (this is 5 days), then In the reference to the rest of the inflammation i ', under the pieces, the money stored in the engraved liquid composition for the narration. The results are compared with the reference residual results. Table 2 rhyme 皙 皙 Example 1 ---- i (mountain only ◎ I Comparative Example 1 ◎ Storage properties

X 8/11X 8/11

S 201204874 〈姓刻性質&gt; ，·優異仰扭斜：幻微米，錐角：4〇度至6〇度） ••良好(CD扭斜：幻.5微米，錐角：30度至6〇度) △ .·普通(CD扭斜：g微米，錐角：3〇度至6〇度） X .不佳(金屬層受損及殘質形成） &lt;儲存性質&gt; 五曰後 ◎.優異(隨著時間之經過處理板片數目增加 餘刻輪廓優異） 目增加，五曰後 X:不佳(隨著時間之經過處理板片數 餘刻輪廓不佳） 制Hi2顯料知’當❹本發明實施例1之組成物時， J貝及儲存性質二者皆優異，但不含對曱苯續酸之比 較例1^組成物結果導致不佳的儲存性質。 蚊所遠，本發日倾供—_於含銅及鈦之金屬声 =刻液組成物。依據本發明，敍刻液組成物可賴刻； 及改良生產力。又依據本發明，刻液組成物 刻允許形成均，，如此提供優異钱 刻時成物不會損壞_ =卩貝⑽了有利地顧至大型顯示面板 又依據本發明，除了含銅及鈦之金屬層外， =液組成物可钱刻用於像素電極之ιζο或印〇。又，於 之金屬層用於源/汲電極而IZ0或a_iT 辛 ==電:據=&quot;刻液組成物可- %極及像素電極。又鋪本發明，射彳液組成物即便未 9/11 201204874 含過氧化缺/或臭氧仍可料 雖然已經為了例示說明目的而揭之，蝕刻速率。 及二體例’但熟諸技藝人士瞭解可未恃離如隨 附之申請專 利範圍揭示之本發明之範圍及精髓而可能做^^項修改、 添加、及取代。 【圖式簡單說明】 無0 【主要元件符號說明】 無0S 201204874 <Terminal nature>, · Excellent pitching: Magic micron, cone angle: 4 to 6 degrees) • Good (CD skew: Magic. 5 microns, cone angle: 30 degrees to 6 inches) Degree) △ .. Ordinary (CD skew: g micron, cone angle: 3 to 6 degrees) X. Poor (metal layer damage and residue formation) &lt;storage properties&gt; Excellent (the number of sheets processed increases with time, the contour of the residual is excellent). The increase in the number of eyes, after X: X: Poor (the number of sheets processed over time is not good). Hi2 is known. In the composition of Example 1 of the present invention, both the J shell and the storage property were excellent, but the result of the comparative example without the p-benzoic acid resulted in poor storage properties. The mosquitoes are far away, and they are supplied on the same day—the metal sound containing copper and titanium = the composition of the engraving. According to the present invention, the composition of the engraving liquid can be etched; and the productivity is improved. According to the invention, the engraved composition is allowed to form a uniform, so that the product is not damaged when the excellent money is provided. _ = mussels (10) advantageously take into account the large display panel and in accordance with the invention, except for copper and titanium. Outside the metal layer, the liquid composition can be used for the pixel electrode or the enamel. Further, the metal layer is used for the source/germanium electrode and IZ0 or a_iT is sin == electricity: according to =&quot; the engraved composition can be - the % pole and the pixel electrode. Further, the present invention is disclosed, and the composition of the sputum liquid can be made even if it does not contain oxidative deficiencies/or ozone, although it has been disclosed for illustrative purposes, the etching rate. And the exemplification of the invention may be modified, added, and replaced by those skilled in the art without departing from the scope and spirit of the invention as disclosed in the appended claims. [Simple description of the diagram] No 0 [Description of main component symbols] No 0

10/11 S10/11 S

Claims (1)

201204874 七、申請專利範圍： 1.及鈦之金制祕職組成物，_組成物總重 马基準，包括： ( , 5至20 wt%過硫酸鹽； 0.01至2 Wt%氟化合物； 1至10 wt%選自於無機酸、無機酸鹽、及其混合 者或多者； 0.3至5 wt%環狀胺化合物； 0.1至5 wt〇/〇對曱笨磺酸；及 剩餘為水。 2. 如申請專利範圍第1項之蝕刻液組成物，其中該過硫酸鹽 係選自於由過硫酸銨、過硫酸鈉、及過硫酸鉀所組成之群 組。 3. 4. 如申請專利範圍第1項之蝕刻液組成物，其中該氟化合物 如選自於由氟化銨、氟化鈉、氟化鉀、氟化氫銨、氟化氫 鈉、及氟化氫鉀所組成之群組。 如申請專利範圍第1項之蝕刻液組成物，其中該無機酸係 選自於由硝酸、硫酸、磷酸、及過氣酸所組成之群組’及 忒無機酸鹽係選自於由硝酸鹽、硫酸鹽、磷酸鹽、及過氣 酸鹽所組成之群組。 如申請專利範圍第1項之蝕刻液組成物，其中該環狀胺化 合物係選自於由5-胺基四唑、甲苯基三唑、苯并三唑、及 甲基苯并三。坐所組成之群組。 5. 201204874 四、指定代表圖： (一) 本案指定代表圖為：無。 (二) 本代表圖之元件符號簡單說明： 無。 五、本案若有化學式時，請揭示最能顯示發明特徵的化學式： 無。 2/11 S201204874 VII. Patent application scope: 1. Titanium gold secret composition, _ composition total weight standard, including: (, 5 to 20 wt% persulfate; 0.01 to 2 Wt% fluorine compound; 1 to 10 wt% is selected from inorganic acids, inorganic acid salts, and mixtures thereof or more; 0.3 to 5 wt% of a cyclic amine compound; 0.1 to 5 wt〇/〇 of a sulfonic acid; and the remainder is water. The etchant composition of claim 1, wherein the persulfate is selected from the group consisting of ammonium persulfate, sodium persulfate, and potassium persulfate. The etching solution composition according to Item 1, wherein the fluorine compound is selected from the group consisting of ammonium fluoride, sodium fluoride, potassium fluoride, ammonium hydrogen fluoride, sodium hydrogen fluoride, and potassium hydrogen fluoride. An etchant composition according to the item 1, wherein the inorganic acid is selected from the group consisting of nitric acid, sulfuric acid, phosphoric acid, and peroxyacid, and the inorganic acid salt is selected from the group consisting of nitrate, sulfate, and phosphoric acid. a group consisting of salt and peroxyacid salt. Etching as in claim 1 a liquid composition wherein the cyclic amine compound is selected from the group consisting of 5-aminotetrazole, tolyltriazole, benzotriazole, and methylbenzotriene. 5. 201204874 IV (1) The representative representative of the case is: No. (2) The symbol of the symbol of the representative figure is simple: None. 5. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: None. 2/11 S
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TWI615508B (en) * 2013-11-04 2018-02-21 東友精細化工有限公司 Etchant composition for a cu-based metal film, manufacturing method of an array substrate for liquid crystal display and array substrate for a liqouid crystal display

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KR20140013310A (en) 2012-07-23 2014-02-05 삼성디스플레이 주식회사 Etchant and manufacturing method of metal wiring and thin film transistor array panel using the same
KR101661072B1 (en) * 2014-12-26 2016-09-29 삼성디스플레이 주식회사 Etchant composition and method of manufacturing metal wiring using the same

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TWI615508B (en) * 2013-11-04 2018-02-21 東友精細化工有限公司 Etchant composition for a cu-based metal film, manufacturing method of an array substrate for liquid crystal display and array substrate for a liqouid crystal display

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