TW201224683A - Film exposure apparatus and film exposure method - Google Patents

Film exposure apparatus and film exposure method Download PDF

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Publication number
TW201224683A
TW201224683A TW100131521A TW100131521A TW201224683A TW 201224683 A TW201224683 A TW 201224683A TW 100131521 A TW100131521 A TW 100131521A TW 100131521 A TW100131521 A TW 100131521A TW 201224683 A TW201224683 A TW 201224683A
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TW
Taiwan
Prior art keywords
exposure
film
mask
light
diaphragm
Prior art date
Application number
TW100131521A
Other languages
Chinese (zh)
Other versions
TWI550367B (en
Inventor
Michinobu Mizumura
Original Assignee
V Technology Co Ltd
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Publication date
Application filed by V Technology Co Ltd filed Critical V Technology Co Ltd
Publication of TW201224683A publication Critical patent/TW201224683A/en
Application granted granted Critical
Publication of TWI550367B publication Critical patent/TWI550367B/en

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03BAPPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B17/00Details of cameras or camera bodies; Accessories therefor
    • G03B17/24Details of cameras or camera bodies; Accessories therefor with means for separately producing marks on the film, e.g. title, time of exposure
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03BAPPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00Photographic printing apparatus
    • G03B27/32Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52Details
    • G03B27/53Automatic registration or positioning of originals with respect to each other or the photosensitive layer
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03BAPPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00Photographic printing apparatus
    • G03B27/32Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52Details
    • G03B27/58Baseboards, masking frames, or other holders for the sensitive material
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70791Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67259Position monitoring, e.g. misposition detection or presence detection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67276Production flow monitoring, e.g. for increasing throughput
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means

Abstract

A side exposure material film is formed in at least one of the feeding regions for film base material on both sides of the width direction of a film base material (20). An alignment mark (2a) is formed by irradiating an alignment mark forming part (14) with an exposure light. The alignment mark (2a) is utilized to detect the sinuosity of the film, in order to adjust the position of a mask (12). Therefore, a film exposure apparatus and a film exposure method for performing the exposure stably, which can easily form an alignment mark and compensate for the sinuosity of the film with high precision while performing continuous exposure of film, can be obtained.

Description

201224683 . 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種膜片曝光裝置以及膜片曝光方法,特別是 關於一種在膜片連續曝光之際,可高精度地修正膜片的曲折,來 穩定進行曝光之膜片曝光裝置以及膜片曝光方法。 【先前技術】 以往,在對例如平板狀的基板等構件進行曝光之際,為了高 精度地管理其曝光位置,遂進行以下方法:使關如於表面上施 加了既定標記的基板’藉由該標記,來決定用於曝光的遮罩之位 置(例如專利文獻1至3),或在載置基板的托板上設置對位用的插 針(例如專利文獻4)。 认石12壯ΐ无拖逆頌裂造方式,在曝光對象即膜片係連續地存 置0之情形’難以適用在如上述平板狀構件的曝光寸 即二在整捲連續製造方式的膜片生產線中,做篇 例如如圖8所示的步射,雜給至曝光華 所有二=產線中,名 從=捲軸8。捲出而供給至產線,於前理中。 光。此時膜片2,在各梦署夕'弓“以曝光裝置1對材料膜進行畴 轉來運送之。因此專如f輪9所支撐,藉由其孩 捲連續製造方式的膜J2=上至4所揭示的技術難以適侧 技術,係進㈣光之情财群的對位 來進爾之技術,並揭示以下技術:對膜片二片第1 201224683 =曝光而形成圖案’然後在第2次曝光之際,以線性 卿’電荷搞合元件则該_,藉此調節遮 側之細長條狀部分。5的圖2所示’膜片寬方向的兩 署在ϊ 觸不町型式的習知曝絲置之®,該曝絲 光光線的光源11對應於並面對著1個遮罩以 線對:基,r從互不相同的方向照射 ^ ΐ 2個區域’在各區域使定向膜定向於互不 定向於定向膜的定向方向,藉此可擴大液 種技術近來受到人們的注目。 饮曰曰,初器專之視角,此 在藉由此種曝光裝置對膜片進行曝光之 =生皺折,從而發生曝光位置的偏移,m為其問題點。、卞 減少該曝光位置的偏移之影響,例如,在 ^ 2 向配置了複紐統之構叙曝絲置中,例ϋ的;^移動= 遮罩分割成複數個,更配置成交錯狀。而如@ 10所 供給而來的上游側,藉由互她_配置的料、文 光區域Α及C對膜片2進行曝光;在下游側,藉由遮^ = 光區域A及C之間的曝光區域b進行曝光, 罢、 十曝 區域c所鄰接的曝光區域D進行曝光。藉此 整面形成定向分割的圖案。 J於膜片2的幾乎 [習知技術文獻] [專利文獻] 專利文獻1:曰本特開昭62_294252號公報 專利文獻2 :曰本特開2005_283896號公報 專利文獻3:日本特開2005-316411號公報 專利文獻4 :國際公開第08/139643號 專利文獻5 :日本特開2〇〇6_292919號公報 201224683 . 【發明内容】 [發明所欲解決的問題] 的技Γ必片 。亦即,專利文獻$ 中,如圖9所示,内的構造之曝光裝置 長i · m ^ 的_方向上具有約2m左右的201224683. VI. Description of the Invention: [Technical Field] The present invention relates to a film exposure apparatus and a film exposure method, and more particularly to a method of correcting a zigzag of a diaphragm with high precision during continuous exposure of the diaphragm , a film exposure apparatus for stably performing exposure and a film exposure method. [Prior Art] In order to accurately control the exposure position of a member such as a flat substrate, the following method is employed: a substrate having a predetermined mark applied to the surface is used. The mark is used to determine the position of the mask for exposure (for example, Patent Documents 1 to 3), or a pin for alignment is provided on a pallet on which the substrate is placed (for example, Patent Document 4). It is difficult to apply to the exposure of the flat member, that is, the film production line of the continuous roll manufacturing method, in the case where the exposed object is a drag-and-split method. In the middle, for example, the step shown in Fig. 8 is given, and the miscellaneous is given to all the two in the production line, and the name is from the reel 8. It is rolled out and supplied to the production line. Light. At this time, the diaphragm 2 is transported by the exposure device 1 to the material film in the domain of each of the dreams. Therefore, it is supported by the f wheel 9 by the film J2 of the continuous manufacturing method. The techniques disclosed in 4 are difficult to apply to the side technology, and the technology of the (4) light-family wealth group is used to introduce the technology, and the following techniques are revealed: the second film of the film 1 201224683 = exposure to form a pattern 'and then in the first At the time of the second exposure, the linear clerk's charge-carrying component is the _, thereby adjusting the slender strip-shaped portion of the occlusion side. Figure 5 of Figure 2 shows the two sections of the diaphragm width direction in the 触Conventional exposure wire, the light source 11 of the exposed light ray corresponds to and faces a mask with a line pair: base, r illuminates from different directions ^ 2 regions 'orientate in each region The film is oriented so as not to be oriented in the orientation direction of the oriented film, thereby expanding the liquid seed technology and attracting attention recently. Drinking enamel, the angle of the original device, the film is exposed by the exposure device. = wrinkles, so that the offset of the exposure position occurs, m is the problem point. 卞 reduce the exposure position The influence of the offset, for example, in the configuration of the re-wire system in the ^ 2 direction, for example; ^ movement = the mask is divided into a plurality of, more arranged in a staggered shape. On the upstream side of the supply, the film 2 is exposed by the materials, the light areas Α and C, and on the downstream side, by the exposure area b between the light areas A and C. The exposure area D adjacent to the exposure, the ten exposure area c is exposed, thereby forming a pattern of the orientation division on the entire surface. J is almost in the diaphragm 2 [PTL 1] [Patent Document] Patent Document 1: Patent Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Japanese Patent Publication No. 6-292919. SUMMARY OF THE INVENTION [Technical Problem] The technical problem of the problem to be solved by the invention is that, in the patent document $, as shown in Fig. 9, the exposure device of the internal structure is i · m ^ _ Having about 2m in the direction

到下游側的曝光區域B及D之Hi的曝光區域A及C 從而:=疊游侧=曝域光中的二片的寬方向之位置偏移’ 號中為,. t案1f明者等’在日本特願2〇1〇-〇_8 塗布有曝光材料之^ α r讀為膜片供給_區域使用而未 偵測對標ί此方向下游侧 游側的遮罩123以及m 移2此在膜片的寬方向調節下 在膜片的雜部形麟準標狄^曝m之偏移° ^械:開孔,或進行藉由ϋ等所實行i標記可 行的標記中,雷射光容易透射膜片:在ί=; 謝,辦繼= 問^ 例m則難以形成對準標諸,以上皆為其 連續供-種在模片 來穩定進娜光级牌則的曲折, [解決問題之技術手段] 201224683 依本發明之膜片曝光方法, 其令於膜片基材上形成有曝光材料膜之膜片,從捲繞著該膜 片之供給捲軸轉移到捲取曝光後的膜片之捲取捲軸,在這段期 間,透過遮罩對該膜片的該曝光材料膜照射曝光光線,藉此將該 遮罩的圖案曝光在該曝光材料膜; 該膜片曝光方法,其特徵在於: 在該膜片基材的寬方向兩侧之膜片基材供給用區域之至少一 方,以同於該膜片基材供給用區域間的曝光區域之方式,形成侧 部曝光材料膜,對該側部曝光材料膜照射對準用曝光光線而形成 對準標誌,利用該對準標誌來偵測膜片曲折,以調整該遮罩的位 置。 依本發明之膜片曝光裝置,其具有: >曝光光源,射出曝光光線;遮罩,形成有用以對膜片進行曝 光的圖案;光料統,雜該曝光絲射出轉光光線,透過該 遮罩照射在該则,·則運送部,令於則紐上形成有曝光材 料膜之膜片,從捲繞著該膜片之供給捲軸轉移到捲取曝光後的膜 片之捲取捲軸’在這段期間’使該遮罩以及該光學系統的曝光位 置通過,鮮標絲,對該膜絲材的寬方向兩侧之膜片基 材供給區域之至少一方,照射對準標誌形成用之雷射光;以及控 制部,利用該對準標誌來摘測膜片曲折,以調整該遮罩的位置; 該膜片曝光裝置,其特徵在於: 該膜月’在有來自該對準標誌用光源的雷射光照射的區域形 成有侧部曝光材料膜,藉著由該#射絲實行賴射祕該側部 曝光材料膜形成對準標誌。 在依本發明之膜片曝光裝置及臈片曝光方法中,例如該曝光 光線與該鮮標tt、轉光光線,係使用不同的雷射光,或併用同 一雷射光。 [發明之效果] 在依本發明之膜片曝光裝置及膜片曝光方法中,藉由對準標 諸用光源’對膜片基材的寬方向兩侧之則基材供給區域之至少 201224683 -方’照㈣準魏形成用之雷射光。而對膜片之形成有侧 ίϊ料ίί區t照射ΐ自對準標諸用光源之雷射光而形成對i 未形成曝光材料膜之膜片的侧部形成曝 標 ^材科膜將其曝先,舰形朗準觀,因此容易形成對準 ° 又 於产地形成的對準標諸,可偵測膜片的曲折來高 精度地艘遮罩的位置’因此可穩定地對膜片進行曝光。 【實施方式】 ΗΗ ΪΓ參照附加的圖式來針對本發明的實施形態進行具體說 依本發明的實施形態的膜片曝光裝置之構造進行 依本發_實施職的則曝光裝置中,藉 ,對準標遠所實行之膜片的寬方向偏移的修正^ 實施形態的膜片曝光裝置中,藉由下二的H 驟之®。依本實施形態的則曝域置1,係由以下 11,射出曝光光線;遮罩12;光學系統, Ξϊϊίii出的曝光光線,透過遮罩12照射在膜片2;例 Η(ϋ輪士膜^運达部,運送膜片2 ;以及對準用雷射標註器 絲源’在則2的邊緣部形成解縣2ae而盘 由例如準直透鏡及/或反射鏡等光學系統,將從曝& 2〇Ϊ太《ίίΓ曝光光線,透過遮罩12照射在膜片2,在膜片基材 21 域中,對在膜片基材2〇上所形成的曝光材料膜 又’依本實施形態的膜片曝光裝置〗,例如如圖2及圖3 i{、徂主11 13(導入標諸形成部),鄰近例如運送滾輪等膜 二t,配置;以及例如線性CCD 15(膜片導人位置侧部),、 1例如遮罩12❺下方往膜片2的寬方向延伸之方式配置。 由雷射標註器13 ’對於從膜片供給部所供給而來的 來iff域罩12定位的基準之導人縣2b,藉樣性⑽15 求侧導入標言志2b,從而可調整相對於膜片2之遮罩12的位置。 7 201224683 坡、Ϊ光對象的膜片2 ’例如如圖8所示’膜片2的基材20從整 捲U敍式的供給捲#請捲$而供給驗赋 =式塗^ 4職面塗布既定的材料,例如定向蹄料,於 無裝置5使魏燥,然後藉由魏滾輪9,供 内摩 在本發明中,如圖i所示,曝光對象的膜片2,在3 側部曝光材料膜的部分照射雷射光而形G ΐίίΪ 光材料膜所形成的區域為例如從膜片的邊緣 片ίί Ι在以往是並未形成曝光材料膜21而用= :在本發明中’於侧部曝光材料膜的區域 彻2&來侧和的曲折,以調 曝光統η,係在例如定向分财式姆光裝 光之光源’可使用射出例如水銀燈、t氣燈 及备: f l則連軌或脈衝雷射光之光源。在本實f二;m ί ? ^,j 鏡專光學純,俾⑽定光量對例如膜 照射曝光光線。曝光光源n,可藉由例 =光=射=藉此可調整對於二2 置1,對於1的曝光區域分別面對配 銬後八宝彳腔^、9 μ 從各光源11射出的曝光光線透射遮罩12, ^行1像素的區域’分別藉由不同曝光光線 定向膜。胁^料成為在各區域定向於互*相同的方向之 向相異’例如在1像素内,追隨定向 擴大液:顯二if齊的液晶分子的方㈣雙方向,藉此可 向之曝井3道以上,亦可猎由來自互不相同的方 亦可sti的==向膜材料定向成3方向以上。又,例如, 1處的曝先區域’設置1道光源11,藉由偏光板等分割 201224683 的曝光光線,從互不相同的方向照射已分割的2道 ,先先線。例如,藉由偏絲,可將曝絲線分割成p偏光的直 s偏光的絲偏光之曝絲線,分別從不同 _遮罩丨2,分別於膜片2的移動方向之上游側及下游側,互相 =地配置有複數個’例如如圖2所示,分別於上游侧(遮罩⑵、 及下游側(遮罩123、124)各設有2個。複數個遮罩12,以萨 H的遮罩121、122所形成之曝光區域與藉由下游側的遮^ 3、124所形成之曝光區域,沿著膜片的移動方向而鄰接之方 Πΐί交錯狀;針對各遮罩12,設有上述的1對曝光光源11。 圖、所不’使來自曝光光源n的曝光光線透射膜片2的移動 =向上游侧之遮罩121及122,在曝光區域a及C對膜片2上的 ^向膜It進行曝光。又,使來自曝光絲11的曝光光線透射下 尸及124 ’在曝光區域B及D對膜片2上的定向膜 在本實施形態中,遮罩12,如圖3所示,由例如框體uoo 與^央的圖案形成部⑽所構成;於圖案形成部; 既疋的光透射區域之圖案12l〇a。亦即,對應在膜片2所欲形成的 圖案形狀而形成有透射曝光光線的形狀之開口,或是設置有光透 =的構件。而在例如定向分财式的曝光裝置巾,藉由透射過 圖案形成部1210的光,對平台10上所配置的膜片2的表面之定 向材料膜進行曝光。在本實施形態中,對每個遮罩12配置〗對曝 光光源11,來分別射出人射角不光光線。因此,在本實施 2中,圖案1210a ’係以於膜片的寬方向並列之複數個狹縫,於 膜片的移動方向並排2列之方式形成。 在本實施形態中,在遮罩12,在圖案i2i〇a的更上游侧,以 在對於膜片2的移動方向垂直的寬方向延伸之方式,設有寬3〇〇, ^右,長250mm左右的線性CCD用之觀察窗12a ;於該觀察窗 12a的長邊方向的中間設有對曝光光線進行遮光的例如寬丨左 右的線狀的遮光圖案12b。而藉由後述的線性CCDl5偵測遮光圖 201224683 案12b的位置,來用於遮罩12的定位。 r山ί遮罩12,例如框體1200的部分係由遮罩平台17所古奸Exposure areas A and C to the exposure areas B and D on the downstream side, such as: = overlap side = positional deviation of the width direction of the two sheets in the exposed field light, in the case of . 'In Japan, 2〇1〇-〇_8 is coated with the exposed material ^ α r is read as the diaphragm supply _ area is used but the opposite side of the downstream side of the side of the mask 123 and m shift 2 This is the offset of the heterogeneous shape of the diaphragm under the adjustment of the width direction of the diaphragm. The mechanical opening is performed, or the marking is feasible by the i-marking performed by ϋ, etc., the laser light. Easy to transmit diaphragm: In ί=; Xie, do = = ^ ^ Example m is difficult to form alignment marks, all of which are for their continuous supply - the twists and turns in the die to stabilize the Jinna level card, [solve Technical Membrane of the Invention] 201224683 A film exposure method according to the present invention, wherein a film of an exposure material film is formed on a film substrate, and is transferred from a supply roll wound with the film to a film after being taken up by exposure. a roll of the film, during which the exposure film of the film is exposed to the exposure light through the mask, thereby exposing the pattern of the mask to the exposure The film material exposure method is characterized in that at least one of the film substrate supply regions on both sides in the width direction of the film substrate is the same as the film substrate supply region. In the manner of exposing the area, a side exposure material film is formed, and the side exposure material film is irradiated with the alignment exposure light to form an alignment mark, and the alignment mark is used to detect the film zigzag to adjust the position of the mask. A film exposure apparatus according to the present invention, comprising: an exposure light source for emitting exposure light; a mask forming a pattern for exposing the film; and a light system for emitting the light of the light through the exposure wire When the mask is irradiated, the transport portion is formed so that the film of the exposure material film is formed on the button, and the take-up reel of the film after the film is taken up from the supply roll wound around the film During this period, the mask and the exposure position of the optical system are passed, and the fresh-labeled yarn is used to form at least one of the film substrate supply regions on both sides in the width direction of the film material. And a control unit that uses the alignment mark to extract a film zigzag to adjust a position of the mask; the film exposure device is characterized in that: the film is in a light source from the alignment mark The area irradiated by the laser light is formed with a film of the side exposure material, and the alignment mark is formed by the side exposure material film by the #ray. In the film exposure apparatus and the cymbal exposure method according to the present invention, for example, the exposure light and the fresh TT, the light ray, use different laser light, or use the same laser light in combination. [Effects of the Invention] In the film exposure apparatus and the film exposure method according to the present invention, at least 201224683 of the substrate supply region on both sides in the width direction of the film substrate is aligned by the reference light source ' Fang 'photo (four) quasi-Wei formation laser light. On the side of the diaphragm, the surface of the diaphragm is formed by exposing the surface of the diaphragm to the surface of First of all, the ship shape is accurate, so it is easy to form the alignment and the alignment mark formed at the place of origin. It can detect the zigzag of the diaphragm to accurately position the mask. Therefore, the diaphragm can be exposed stably. . [Embodiment] ΗΗ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ ΪΓ 的 的 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光Correction of the width deviation of the diaphragm to be carried out by the standard deviation ^ In the diaphragm exposure apparatus of the embodiment, the second step of the H is used. According to the embodiment, the exposure area is set to 1, and the exposure light is emitted by the following 11; the mask 12; the optical system, and the exposure light emitted by the illuminating film is irradiated to the diaphragm 2 through the mask 12; ^Ocportation Department, transporting the diaphragm 2; and aligning the laser source with the laser marker' to form the Jie 2ae at the edge of the 2, and the optical system such as a collimating lens and/or a mirror, will be exposed & 2 〇Ϊ 《 《 ί 《 ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ a film exposure device, for example, as shown in Fig. 2 and Fig. 3, a main assembly 11 13 (introduced into the formation portion), adjacent to a film such as a transport roller, etc., and a linear CCD 15 (membrane guide) The position side portion, for example, is disposed such that the lower surface of the mask 12 is extended in the width direction of the diaphragm 2. The reference of the laser pointer 13' to the position of the iff region cover 12 supplied from the diaphragm supply unit In the lead county 2b, the marginal (10) 15 is used to introduce the mark 2b, so that the mask 12 relative to the diaphragm 2 can be adjusted. 7 201224683 Slope and calendering target 2 'For example, as shown in Fig. 8 'The substrate 20 of the diaphragm 2 is supplied from the whole volume of the U-shaped supply volume. The face is coated with a predetermined material, such as directional shoe material, and the device is used to make Wei dry, and then by the Wei roller 9, for internal friction in the present invention, as shown in Fig. i, the film 2 of the exposed object is at 3 The portion of the side exposure material film illuminates the laser light and the region formed by the film of the optical material is, for example, from the edge of the film ί ί Ι 以往 以往 以往 以往 以往 以往 以往 以往 以往 以往 以往 以往 = = = = = = = = = = = The area of the side exposure material film is 2& to the side and the zigzag, to adjust the exposure system η, for example, the light source of the directional wealth type light light can be used to emit, for example, a mercury lamp, a gas lamp and a preparation: fl Then the source of the orbital or pulsed laser light. In this real f 2; m ί ^ ^, j mirror specific optical purity, 俾 (10) fixed amount of light on, for example, the film exposure exposure light. Exposure source n, by example = light = shot = This can be adjusted for 2 and 2, for the exposure area of 1 respectively, after the matching, the Babao cavity ^, 9 μ from each light source 11 The emitted exposure light is transmitted through the mask 12, and the area of the 1-pixel line is respectively oriented by different exposure light rays. The stress is made to be different in the direction in which the respective regions are oriented in the same direction*, for example, within 1 pixel. Follow the directional expansion liquid: the square (4) of the liquid crystal molecules of the two bismuth crystals, so that it can be exposed to more than 3 channels, or the directional material can be oriented from the mutually different sides. In addition, for example, one exposure area is set to one light source 11, and the exposure light of 201224683 is divided by a polarizing plate or the like, and the divided two channels are irradiated from mutually different directions, and the line is first. For example, by the partial filament, the exposed wire can be divided into p-polarized straight s-polarized wire polarized exposure wires, respectively, from different _mask 丨 2, respectively on the upstream side and the downstream side of the moving direction of the diaphragm 2, For example, as shown in Fig. 2, two are provided on the upstream side (the mask (2) and the downstream side (the masks 123, 124), respectively. A plurality of masks 12, The exposed areas formed by the masks 121 and 122 and the exposed areas formed by the downstream side masks 32 and 124 are adjacent to each other along the moving direction of the diaphragm; for each mask 12, The above-mentioned one pair of exposure light sources 11. The movement of the exposure light from the exposure light source n through the diaphragm 2 = the masks 121 and 122 on the upstream side, and the exposure regions a and C on the diaphragm 2 ^ Exposure to the film It. Further, the exposure light from the exposure wire 11 is transmitted through the corpse and 124' in the exposed regions B and D on the film 2 in the embodiment 2, the mask 12, as shown in FIG. As shown, for example, the frame forming portion (10) of the frame uoo and the central portion; and the pattern forming portion; 12l〇a, that is, an opening having a shape for transmitting the exposure light or a member provided with light transmission = corresponding to the shape of the pattern to be formed in the diaphragm 2, and an exposure device for example, for example, a directional dispensing type The alignment material film on the surface of the diaphragm 2 disposed on the stage 10 is exposed by the light transmitted through the pattern forming portion 1210. In the present embodiment, the exposure light source 11 is disposed for each mask 12, Therefore, in the second embodiment, the pattern 1210a' is formed by a plurality of slits arranged in the width direction of the diaphragm, and is formed in two rows in the moving direction of the diaphragm. In the embodiment, the mask 12 is provided with a width of 3 〇〇, ^ right, and a length of about 250 mm on the upstream side of the pattern i2 i 〇 a so as to extend in a width direction perpendicular to the moving direction of the diaphragm 2 . The observation window 12a for the linear CCD is provided with a linear light-shielding pattern 12b of, for example, about 丨, which is shielded from light in the longitudinal direction of the observation window 12a, and the light-shielding pattern is detected by a linear CCD 15 described later. 201224683 Case 12b's location, come Positioning a mask 12 in. R mountain ί mask 12, for example, the frame portion 1200 by a mask stage 17 based old rape

Si ίΓ17的移動’遮罩12全體係可移動。遮罩平台^ 連接至例如如圖4所示的遮罩位置控制 , —ζ: 材料以移動’藉此可成膜片2上的‘向膜 置的Ζ 1外以及曝光裝置1内所設 :r, 内曝光過的膜片2轉移至捲取捲軸8卜 使在曝先裝置1 m射標註器14(對準標如光源),係照 源射)出雷:=4如之=’二由:==燈等_ 12^,於膜η 在例如則2的移動方向中上游側的遮罩12卜 對摩之方式設置情翔細_ 14,於 在Ξΐίΐϊΐ 、的觀察窗12<及遮光圖㈣b)之位置, 2a之[ϊϋ 丨^^對準標誌、&。在本發明中,形成對準標諸 用ί膜片美的邊緣部算起25酿的部分,在以往是 121、122的觀察窗^ ^置=片 區域c所形成之圖案,與在膜片2的邊緣部 t準私⑽2a之距離,係常為一定間隔。 在本實施形態中,對準標誌偵測部16, 下游側的遮㈣,在膜片的寬方向並排之 201224683 . ^志偵測部〗6,配罟於胺y 1从 註器Μ於膜片&邊緣片或下方,谓測由對準用雷射標 置控制部3G 連接缝制群12的位置之遮罩^ 料、、隹描將谓'則到的化號傳送到遮罩位置押制邱m 對準‘書志谓測部16,為例如 工4 〇。 於對應例如下游側的遮罩圖1及圖2所示, 準標諸2a在膜片寬方向 置,偵測對 的對準標誌2a在膜# f + 對丰裇一偵測部16,將偵測到 罩位置控制部ί置傳送至例如如圖4所示的遮 置,來對則二動方制部%,根據該對準縣2a的位 整。 的移動方向下游侧的遮罩123及124之位置進行調 *,置控制部3〇的構造之圖。如圖4所 ^ Zi%ZTi! 體33、馬達躯二二;理部31、演算部32、記憶 36、控制ί 37 ^ 4、先源驅動部35、遮罩平台驅動控制部 準標ft處3傻行由後述的對準標補測部16所拍攝的對 盥實際的對鼻例如應設定的對準標諸2a的中心位置 對ΪΓ的中心位置之膜片寬方向的偏移。又,演算 3盘生CCD15所_到之膜片的導入標論、的 ,置,、遮罩12上的遮光圖案12b的位置之距離,來演 ‘之際所應設定的遮罩12的位置與實際的遮罩12的位置^膜二 扁體33,記憶例如影像處理部31所偵測到的對 制部34 ’控制例如膜片捲取捲軸81的馬 :達= 驅動之際的旋轉速度。 正:¾疋在 光源驅動部35,控制曝光光源u的亮燈或是媳燈 振盪頻率。遮罩平台轉控制部36,控制遮舉平台17的驅動,^ 201224683 平2的移動方向及移動量。控制部37,控制此等影 m# °卩31、演算部32、記憶體33、馬達驅動控制部34、光泝 =Ρ 35、以及遮罩平台驅動控制部%之驅動。藉此,膜片$ 調整例如遮罩12的位置,或切換藉由絲η所實行的曝 QN/QFF,歧可翻祕取 $ 81所設之馬達的旋轉速度等。 滑醫軸 位詈t ^ ϋ實施形態中,例如如圖1所示,在對準標認2a的 游ίΪΪΪ寬方向外侧偏移之情形,遮罩位置控制部30,使下 膜片ϋίί l2l·及124的位置’僅以對準標諸仏偏移的量移動至 c ’遮罩位置控制部30,使下游侧的遮罩123及124的位 ,僅以對準標誌'2a偏移的量移動至膜片的寬方向内侧。 雷射標註器13,如圖5所示,由構架台13a、運送部13卜 13c所構成;構架台13a,係以在膜片受供給而來的部分 運送ίϊΠΛϋΓΛ方向垂直的膜片寬方向延伸之方式配置。 係由構4台13a所支撑,且可在構架台13&上沿著发 ίίΪ 2。又’運送部既,係藉由未圖示的控制裝置來控^ 其位置,藉此可調整標記部13e的位置。 利 ^部13e ’係從例如Nd_YAG雷射等雷射光源射出雷 所示,於從膜片供給部供給而來的膜片2之前端部,形成 ,定形狀例如十字狀的導人 2b。標記部…,.係=於g 3 $’m置來控制運送部13b的位置’藉此可調整對=膜 卜”二導人,諸f之形成位置。在本實施形態中,如圖6所示, 別對應4個遮罩12之方式,於膜片2的前端 °Ρ以例如一定間隔形成4個導入標誌2b。 如圖7所示’線性CCD 15(膜片導入位置侧部),係 ΪΪ12所設的觀察窗仏及遮光圖案12b的下方於膜片2的寬Ϊ 之方式配置;當則2的前端部係運送至位於線性ccd g 性®CCD 15與遮罩12之間)時,摘測於膜片2的前端部 >成的導入標諸2b之位置。又,線性CCD 15,將於遮罩12的觀 12 201224683 =12a的中間所設之遮光圖案必 線性CCD 15,連接至遮罩位置控制部 : 2b及遮光圖案12b的位置傳送至遮罩位置控的導入標遠 遮罩位置控制部30,亦藉由在與從線性c 入標諸2a及遮光圖案12b的位置演算出的膜片 之間的距離,來最蝴進行曝光之際的者 亦即’於遮罩位置控制部3〇,儲存有預先以導入標、的 基準,所應設定的遮糊光_既)的位置料了的= 為 3= ί Ϊ性-15 j為基雜置’來移動鮮平台17驗置, 測 ,^案12b的位置所決定之遮罩位置位於既定 此,在本實施形態轉絲置+,即使在曝細始之際γ能以^ 先菩以高形成的導入標諸处的位置為基準,'來調整遮 罩12的位置,能以向精度決定膜片應曝光之位置。 在本實施職巾,在雜是膜片基材Μ的供給祕域之至少 形成侧部曝光材料膜,從對準用雷射標註器14對此 1照射雷射絲形成對準魏2a。因此,容易形成 2a。亦即,在以往,形成對準縣2a的區域,係未形成 ,光材制之則紐2G轉分,耻在令例如所使用的雷 Ϊίί波長挪脑的紫外光之情料,若竹雷射光的照射能源 極度增大為例如8J/cm2,則難以形成對準標誌2a,以上皆為其問 ,點。相對於此,本實施形態中,在膜片基材2〇上例如從邊^部 异起25mm的區域塗布曝光材料21而形成側部曝光材料膜,因此 在例如使用光定向性的材料做為曝光材料,令雷射光為波長 的紫外光之情形中,即使將雷射光的照射能源減少至 〇.lJ/cm左右,亦能明顯且高精度地形成對準標誌%。因此,藉由 以高精度形成的對準標誌2a,可偵測膜片2的曲折來高精度地調 整遮罩12的位置,因此可穩定地對膜片進行曝光。 又’於臈片的前端部形成導入標誌2b,藉由此導入標誌2b 的位置來調整遮罩12的位置,因此在本實施形態中,將曝光區域 13 201224683 5為下游侧之情形,不會因則2缝折及寬方向的偏 二2 重疊,或產生未曝光的區域。而因為遮罩12的 定二ϋ以在膜片2的前端所形成的導入標誌%為基準來決 圖案。===案之外,亦可高精度地形成下游側的 對準中^^^^線^嗓光光源^與形成 ii射銀燈等連續光,而是使用例如統閃光燈等脈 並以i性中,雖於則的前端部形成導人標誌沈, 的初始位置,作在中藉此亦來調整在曝光開始之際的遮罩12 拉#在本發明中’亦可不設置此類構造。 首春t對本實施形態的臈片曝光裝置1之動作進行侧。 邊以iit5圖8狹縫式塗布機4及絲裝置5等,在從 5塗布了曝光材料21之膜片2,係藉由 ^达滚輪9’從其㈣部供給至曝光裝置1内 雷射運送滚輪等膜片供給部,其“部係‘ 例如=======,則暫時停止 實行的控制,使雷射桿*主5| i;3、6V;l、¥m 藉耆由控制裝置所 在例如^部.係配置於 而在3認了標記部13c的位置,則從標記部1=壬/雷^f,。 部動使= 201224683 =射雷射光,於膜片的前端部形成導入標_2b。而 =片的前端部上4辦人觀2b的形成結束 ^伊 2,藉者由運送滾輪等所實行的運送,如 =端部對應曝光區域A及C來配置的遮罩gThe movement of the Si Γ 17 is fully movable. The mask platform ^ is connected to, for example, a mask position control as shown in FIG. 4, - ζ: the material is moved 'by the 'on the film 2' to the outside of the film 1 and the exposure device 1 is provided: r, the inner exposed diaphragm 2 is transferred to the take-up reel 8 so that the exposing device 1 m is irradiated to the labeling device 14 (aligning the target light source), and the source is shot): 4 ===2 By: == lamp, etc. _ 12^, in the moving direction of the film η, for example, in the moving direction of the upstream side, the mask 12 is arranged in a manner of 对14, in the observation window 12 in the Ξΐίΐϊΐ, and the shading Figure (4) b) Position, 2a [ϊϋ 丨 ^^ alignment mark, & In the present invention, the portion formed by aligning the edge portion of the film with the film is formed, and the pattern formed by the observation window of the 121 and 122 is the pattern formed by the sheet region c, and the film 2 is formed. The distance between the edge portion t and the quasi-private (10) 2a is often a certain interval. In the present embodiment, the alignment mark detecting unit 16 and the downstream side cover (four) are arranged side by side in the width direction of the diaphragm 201224683. The detection unit 6 is equipped with the amine y 1 from the injector to the film. In the sheet & edge sheet or underside, the mask which is connected to the position of the sewing group 12 by the alignment laser indexing control unit 3G is transmitted, and the image of the pattern is transferred to the mask position. The system is aligned with the book's prescribing unit 16, for example, the work 4 〇. In the mask corresponding to, for example, the downstream side, as shown in FIG. 1 and FIG. 2, the quasi-standard 2a is disposed in the width direction of the diaphragm, and the alignment mark 2a of the detecting pair is in the film #f+ It is detected that the cover position control unit is conveyed to, for example, the cover as shown in FIG. 4, and the two-way operation unit % is aligned according to the alignment county 2a. The position of the masks 123 and 124 on the downstream side in the moving direction is adjusted, and the structure of the control unit 3 is set. As shown in Fig. 4, Zi%ZTi! body 33, motor body 22; rational part 31, calculation unit 32, memory 36, control ί 37 ^ 4, the source drive unit 35, the mask platform drive control unit quasi-standard ft The stupidity is offset by the alignment of the alignment target portion 16 to be described later, for example, the actual alignment of the nose, for example, the alignment of the center position of the alignment mark 2a with respect to the center position of the pupil in the film width direction. In addition, the position of the mask 12 to be placed in the CCD 15 is calculated, and the position of the mask 12 on the mask 12 is set to the position of the mask 12 to be set. With respect to the position of the actual mask 12, the film flat body 33 memorizes, for example, the opposing portion 34' detected by the image processing portion 31, for example, the rotation speed of the film winding reel 81: . Positive: 3⁄4 疋 In the light source driving unit 35, the illumination of the exposure light source u or the oscillating frequency of the xenon lamp is controlled. The mask platform rotation control unit 36 controls the driving of the illuminating platform 17, and the movement direction and movement amount of the 201224683 flat 2 . The control unit 37 controls the driving of the shadows m#°卩31, the calculation unit 32, the memory 33, the motor drive control unit 34, the light traceback=Ρ35, and the mask platform drive control unit %. Thereby, the diaphragm $ adjusts, for example, the position of the mask 12, or switches the exposure QN/QFF performed by the wire η, and the rotation speed of the motor set by $81 can be reversed. In the embodiment of the sliding doctor axis 詈t ^ ϋ, for example, as shown in FIG. 1, in the case where the alignment mark 2a is shifted outward in the width direction, the position control unit 30 is masked so that the lower diaphragm ϋίί l2l· The position 'and the position of 124' is moved to the c'mask position control unit 30 only by the amount of the offset of the alignment mark, and the positions of the masks 123 and 124 on the downstream side are shifted by only the amount of the alignment mark '2a offset. To the inside of the diaphragm in the width direction. As shown in Fig. 5, the laser marker 13 is composed of a frame stage 13a and a transport unit 13b; the frame stage 13a is extended in the width direction of the film in which the diaphragm is supplied in a direction perpendicular to the transport direction. The way it is configured. It is supported by the four stages 13a and can be sent along the frame table 13& Further, the "transport portion" is controlled by a control device (not shown), whereby the position of the marker portion 13e can be adjusted. The portion 13e' is formed by, for example, a laser beam emitted from a laser light source such as a Nd_YAG laser, and is formed in a shape such as a cross-shaped guide 2b at a front end portion of the diaphragm 2 supplied from the diaphragm supply unit. The marking portion ..., the system = is placed at g 3 $'m to control the position of the transport portion 13b, whereby the position of the pair of guides can be adjusted, and in this embodiment, as shown in Fig. 6, As shown in the figure, in the manner of the four masks 12, four introduction marks 2b are formed at a predetermined interval, for example, at the front end of the diaphragm 2. As shown in Fig. 7, the linear CCD 15 (the side of the diaphragm introduction position), The observation window and the light shielding pattern 12b provided under the system 12 are disposed below the width of the diaphragm 2; when the front end portion of the 2 is transported between the linear ccd g® CCD 15 and the mask 12) , the measurement is carried out at the front end portion of the diaphragm 2 into a position marked 2b. Further, the linear CCD 15 will be set in the middle of the view 12 of the mask 12 201224683 = 12a, the shading pattern must be linear CCD 15, Connected to the mask position control unit: 2b and the position of the light-shielding pattern 12b are transmitted to the mask-positioned introduction-type remote mask position control unit 30, and also by the position 2a and the light-shielding pattern 12b from the linear c The distance between the calculated diaphragms is the same as that of the mask position control unit 3 The position of the opaque light _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The position of the mask determined by the position of the case 12b is set at this point. In the present embodiment, the yarn is set to +, and even at the beginning of the exposure, γ can be based on the position of the introduction target formed by the height of the first wave, ' To adjust the position of the mask 12, the position at which the diaphragm should be exposed can be determined with respect to the precision. In the present embodiment, at least the side exposure material film is formed in the supply domain of the film substrate ,, for alignment. The laser marker 14 illuminates the laser to form the alignment 2a. Therefore, it is easy to form 2a. That is, in the past, the area where the alignment county 2a is formed is not formed, and the light material is made 2G. It is difficult to form the alignment mark 2a, for example, if the irradiation energy of the bamboo laser light is extremely increased to, for example, 8 J/cm 2 , for example, if the ultraviolet light of the wavelength of the thunder is used. On the other hand, in the present embodiment, for example, a region of 25 mm from the edge portion is formed on the film substrate 2A. The cloth exposes the material 21 to form a side exposure material film, and therefore, in the case where, for example, a material having a light directivity is used as an exposure material and the laser light is ultraviolet light of a wavelength, even if the irradiation energy of the laser light is reduced to 〇.lJ The alignment mark % can also be formed with significant and high precision. Therefore, by the alignment mark 2a formed with high precision, the meandering of the diaphragm 2 can be detected to adjust the position of the mask 12 with high precision. Therefore, the diaphragm can be stably exposed. Further, the introduction mark 2b is formed at the tip end portion of the cymbal sheet, and the position of the mask 12 is adjusted by introducing the position of the marker 2b. Therefore, in the present embodiment, the exposure region 13 is used. 201224683 5 is the case of the downstream side, and there is no overlap between the 2 slits and the width direction 2 or 2, or an unexposed area. Since the predetermined size of the mask 12 is determined based on the % of the mark formed on the front end of the diaphragm 2, the pattern is determined. In addition to the case of the === case, it is also possible to form the alignment light of the downstream side of the ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ In the case where the front end portion of the front portion is formed with the initial position of the guide mark, the mask 12 is also adjusted to be adjusted at the start of exposure. In the present invention, such a configuration may not be provided. The first spring t is on the side of the operation of the cymbal exposure apparatus 1 of the present embodiment. The film 2 coated with the exposure material 21 from 5 is applied to the laser beam from the (four) portion to the exposure device 1 by the slit coating machine 4 and the wire device 5 of FIG. When the diaphragm supply unit such as the roller is transported, for example, the “part system” =======, the control that is temporarily executed is temporarily stopped, so that the laser rod*main 5|i;3,6V;l,¥m is borrowed The control device is disposed, for example, at the position where the mark portion 13c is recognized by the mark portion 1 = 壬 / 雷 ^f, the partial action = 201224683 = the laser beam is emitted at the front end portion of the diaphragm The introduction mark _2b is formed, and the formation of the person's view 2b on the front end portion of the slab is completed, and the escrow is carried out by the transport roller or the like, such as the end portion corresponding to the exposure areas A and C. Cover g

Ϊ 12⑽物^SI ccm/,爾驗 cCD15;線性 導入椤-2:t : ί 線性CCD15的上方時,侧 =入钛⑽2b的位置。又’線性CCD 15,偵測於遮罩12的 光圖案12b之位置。藉此測定導入標錢與 控制部Cm 號傳送至遮罩位置 ,例如先停止例如膜片2的運送,或不啟動 間的2:之=:==;入標諸2b與遮光圖案咖之 的面中遮罩置控制部30,首先對在平行於膜片面 為其ίΓΐΐ間的距離’與預先儲存的資料(以導入標鍵、2b的位置 應?定的初始位置之資料)進行比較。而使遮罩平 ^ — M、’纟1使藉由遮細案12b的位置所決定之遮罩位置位 乂前疋以止。藉此’在曝光區域八及。中的曝光開始 的初始位ΐ 準’來高精度地蚊麟12辦⑵、122) 2,古Ϊϋ12的初始位置確定,則藉由例如運送滾輪等運送膜片 11 部位位於曝光光線的照射區域為止,使來自光源 上的定ΐίίίί遮罩12 ’來對膜片2進行曝光。藉此,膜片2 供仏膜:丨向於既的方向。當1處的曝光結束,則依序 ^奸4^依序對曝光對象部位進行曝光。因此,於膜片2,藉 °°fA及C所曝光的圖案係形成為2根細長條狀。 ’在本實施形態中,曝光裝置,於對應在膜片2的移動方 15 201224683 =游== 遮射罩;=)的=广(及遮先圖_ 、巧玎平用笛射才示注器14,於對應在膜片2沾狡 ίίΐ側ΪΪΪ 12(遮罩121、122)的觀察窗Μ及遮光_ _ 之位置,在膜片2的邊緣部形成對準標鍵'%。因此在膜 動方向之上游侧的曝光區域A及曝光區域圖盘 準用雷射標註器14盥曝光光泝11徘用π — + 寺在對Ϊ 12(10) thing ^SI ccm/, test cCD15; linear introduction 椤-2:t : ί When the linear CCD15 is above, the side = the position of the titanium (10) 2b. Further, the linear CCD 15 is detected at the position of the light pattern 12b of the mask 12. In this way, the introduction of the standard money and the control unit Cm number is transmitted to the mask position, for example, the transport of the diaphragm 2 is stopped first, or the 2: ==== between the start-ups; the 2b and the shading pattern are entered. The in-plane mask control unit 30 first compares the distance 'between the diaphragm surface and the pre-stored data (the data of the initial position to which the position of the key and 2b is to be introduced). The mask is flattened by M_', and the mask position determined by the position of the mask 12b is stopped. By this, the exposure area is eight. In the initial position of the exposure start, the high-precision Mosquito 12 (2), 122) 2, the initial position of the ancient cymbal 12 is determined, for example, by transporting the roller or the like, the portion of the diaphragm 11 is located in the irradiation area of the exposure light. The film 2 is exposed by a fixed ΐίίίί mask 12' from the light source. Thereby, the diaphragm 2 is supplied with a diaphragm: the same direction. When the exposure at one location is completed, the exposure target portion is sequentially exposed in order. Therefore, in the diaphragm 2, the pattern exposed by °°fA and C is formed into two elongated strips. In the present embodiment, the exposure device corresponds to the movement of the diaphragm 2 15 201224683 = swim == hood; =) = wide (and the mask _, Qiao 玎 flat with the flute only to indicate The device 14 forms an alignment key '% at the edge portion of the diaphragm 2 at a position corresponding to the observation window Μ and the light shielding _ _ of the diaphragm 2 遮 ΐ ΐ ( 12 (mask 121, 122). Exposure area A on the upstream side of the film moving direction and the exposure area plate are used with the laser marker 14 盥 Exposure light traces 11 徘 with π —

運送而來的膜片2,在從其邊緣部算起25mm的區 曝光材料21,在從解用雷射標註器14射㈣ 如H _上亦塗布有曝光材料21 °雷射光,對 =成綠2a。此時,即使將雷射光的照射能源減少 0.1J/cm左右,亦能明顯且高精度地形成對 曝光ί 由ί送’如圖2所示,其前端部送達至對應下游的 曝先£域Β及D而配置的遮罩12(遮罩123、124)的下於於 ,遮^ 12的下方之觀察窗12a(以及遮光圖案之位血上g 側的情形相同’以沿著膜片2的寬方向延伸之 ^ = 15 ’當則㈣獅魏至錄雜⑽Μ 2上:(線性CCD 15與遮罩12之間)時,偵測於膜片2的前 斤形成之導入標諸'2b的位置。❿與上游側的情形相 罩二Γί窗12:的中間所設之遮光圖案二= 12b之間的距離。而將偵測到的導入標幻 3 的距離之信賴送至鮮位置浦部3G。另外,=由=3 15所實行的個步驟到遮罩位置的調整結束之前^如先停止例 如膜片2的運送,或不啟動對於膜片2的曝光。 ^線性=15輸入導入標誌' 2b與遮光圖案12b之間的距 =錢,舰罩位置控卿3〇,首辆在平行於則面的面中 兩者之間的距離,與預先错存的資料(以導入標誌、⑪的位置為基準 201224683 之遮罩12應設定的初錄置之資料)進行比較。而使遮罩平台i7 f動’直到使藉由遮光圖案既的位置所決定之遮罩位置位 3:?=止L藉此,在曝光區域B及〇中的曝光開始之前, 、片2為基準,來兩精度地決定遮罩12(遮罩123、12句的初始 1IL 置。 當遮罩12的初始位置確定,則藉由例如運送滾輪等運送膜 ,直到曝光對象部位位於曝光光線的照射區域為止,而 曝光光線透射遮罩12,以對膜片2進行曝光。藉此,膜$ 向向於既糾方向。當1處的曝光結束,則依^ 序光對象部位進行曝光。藉此,於膜片2,形The transported film 2 is exposed to the area exposed material 21 of 25 mm from the edge portion thereof, and is irradiated with the exposure material 21 ° laser light from the de-energized laser marker 14 (4), for example, H _ Green 2a. At this time, even if the irradiation energy of the laser light is reduced by about 0.1 J/cm, the exposure ί can be formed clearly and accurately. As shown in FIG. 2, the front end portion is delivered to the corresponding downstream exposure field. The mask 12 (masks 123, 124) disposed in the vicinity of D and the observation window 12a under the cover 12 (and the case where the blood on the g side of the light-shielding pattern are the same) are along the diaphragm 2 The width direction of the extension ^ = 15 'When the (four) lion Wei to the recording (10) Μ 2: (between the linear CCD 15 and the mask 12), the front jin formation detected in the diaphragm 2 is introduced into the position labeled '2b ❿ ❿ ❿ 上游 上游 上游 上游 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗 窗In addition, = the step performed by = 3 15 until the end of the adjustment of the mask position ^ such as to stop the transport of the diaphragm 2, for example, or the exposure to the diaphragm 2. ^ Linear = 15 input introduction flag ' 2b The distance from the shading pattern 12b = money, the position of the hood cover 3 〇, the distance between the first one in the plane parallel to the plane, and Compare the previously stored data (the information of the initial recording set by the mask 12 of the 201224683 based on the position of the index, 11), and make the mask platform i7 f move until the position by the shading pattern is made. The determined mask position bit 3: ? = stop L, whereby the exposure of the exposure areas B and 〇 is started, and the sheet 2 is used as a reference to determine the mask 12 with two precisions (mask 123, 12 sentences) When the initial position of the mask 12 is determined, the film is transported by, for example, a transport roller until the exposure target portion is located in the irradiation region of the exposure light, and the exposure light is transmitted through the mask 12 to expose the film 2. Thereby, the film $ is oriented in the direction of the correction. When the exposure at one point is completed, the exposure is performed on the target portion of the light.

ίΐίίί曝光域BAD所曝光的_,而在藉由曝光區域A及 的圖案之間係受藉由曝光區域B ί光==由曝光區域C所形成的圖案之方式,形由 成的圖案。此時’已藉由曝光區域a及c所形成 眼域BAD所形成的圖案,不會重疊或殘留未 -』、先巧邛为,而在膜片的整面高精度地形成圖案。 产地光ί置1如以上方式進行動作’可開始對膜片高精 成Ϊ案㈤,膜片的移動方向的下游侧之遮罩12(123、 置約4tT左*距的移動方向上游側之遮罩12(12卜122)的位 的^游㈣描在對膜片連續進行曝光中’在膜片的移動方向 在寬方向產生t 敵折,膜片2相對於遮罩12(123、124) 下被ϋ ξ $在本實施形態中,在膜片的邊緣部之上方或下方中的 位置,配詈右。(土罩123、124)之觀察窗i2a(以及遮光圖案i2b)之 K 3有例* CCD攝職等之對準標誌顧部16,侧在膜 匕如圖1所不’在例如對準標誌2的 :π形,遮罩位置控制部30,使===: P使在例如對準觀2a的位置往則的寬方向_偏移之情 201224683 =遮罩位置控綱3G,亦使下游觸遮罩123及12 =準標誌、2a偏移的量移動至膜^的寬方向内側。因=: 片2的移動方向的下游侧中,對準標諸2a ^膜 124之距離係維持於一定間隔。 叩遮罩123、 使在=態中,在連續曝光之際,如圖1所示,即 ί 狀_,亦可修正則2的移動方向 移游Π 12的位置’藉此相對於膜片2的曝光位置不合2 移,可進行穩定的曝光。 1个Θ侷 爽推雖說明了在本實施形態中,將做為1像素的區域分柯 之7分割方式的曝絲置,但藉由令曝錄Ϊ如二 式構成,可裝造3D顯不器用的偏光膜片。亦即,若藉由 金^^曝光光線,例如,對每個在膜片的寬方向所鄰接的做為 ,素之區域,交互照射P偏光及s偏光的直線偏光之曝光 =可在每個藉由複數個像素所構成的畫素巾,使定向材料膜的定 向額不同。藉此,可得到在膜片面中定向方向相差9〇。而具有與 板相同的功能之定向膜,可將所得之膜片做為偏光膜片使 ,三亦即,若使直線偏光的影像表示用的光透射該偏光膜片,則 在=個由複數個畫素所構成並於膜片的寬方向延伸之表示列,射 出旋轉方向互相相反的圓偏光之透射光。可將該圓偏光的2道透 射光,分別做為例如3D顯示器的右眼用及左眼用的表示光使用。 [產業上利用性] 本發明,在整捲連續製造方式的膜片曝光裝置中,能以高精 度修正膜片的曲折,來連續進行曝光。 【圖式簡單說明】 [圖1]係顯示在依本發明的實施形態的膜片曝光裝置中,藉由 對準標諸所實行之膜片的寬方向偏移的修正之圖。 [圖2]係顯示在依本發明的實施形態的膜片曝光裝置申,藉由 下游側的遮罩所實行之曝光步驟之圖。 [圖3]係顯示在依本發明的實施形態的膜片曝光裝置中,遮罩 201224683 . 的平面圖 [圖4]巧以—例顯示膜片位置的控制部之圖。 [圖5]係以=例顯示導入標誌形成部之圖。 口 ϊί :52ίϊ=式的膜片生產線的-例之圖。 [圖10]係以—例顯示在°腔刀方式的曝光裝置之立體圖。 造之曝光裝置之圖。’…、、片移動方向配置了複數道光源的構 【主要元件符號說明】 1 :曝光裝置 2 :膜片 2a :對準標誌 2b :導入標誌 2c =圖案 3:前處理部 4:狹縫式塗布機 5 :乾燥裝置 6:溫度調節裝置 9 :滾輪 10 =平台 11 ·曝光光源 12 :遮罩 12ar觀察窗 12b =遮光圖案 13 :雷射標註器 13a =構架台 201224683 13b :運送部 13c :標記部 14 :對準用雷射標註器 15 :膜片導入位置偵測部(線性CCD) 16 :對準標誌偵測部 17 :遮罩平台 20 :膜片基材 21 .曝光材料膜 30 :遮罩位置控制部 31 :影像處理部 32 :演算部 33 :記憶體 34 :馬達驅動控制部 35 :光源驅動部 36 :遮罩平台驅動控制部 37 :控制部 80 :供給捲軸 81 :捲取捲轴 121 : 第1遮罩 122 : 第2遮罩 123 : 第3遮罩 124 : 第4遮罩 1200 :框體 1210 :圖案形成部 1210a :圖案A、B、C、D :曝光區域The _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ At this time, the pattern formed by the eye region BAD formed by the exposure regions a and c does not overlap or remains, and the pattern is formed on the entire surface of the film with high precision. The production area is set to operate as described above. 'The high-precision film can be started. (5), the mask 12 on the downstream side in the moving direction of the diaphragm (123, the mask on the upstream side in the moving direction of 4tT left*) 12 (12 bu 122) of the position of the four (four) is described in the continuous exposure of the diaphragm 'in the direction of movement of the diaphragm in the width direction of the enemy, the diaphragm 2 relative to the mask 12 (123, 124) In the present embodiment, the position of the observation window i2a (and the light-shielding pattern i2b) of the (the earth cover 123, 124) is affixed to the position above or below the edge portion of the diaphragm. * Alignment of the CCD camera, etc., on the side of the film, as shown in Fig. 1, in the π-shape of the alignment mark 2, for example, the mask position control unit 30, so that ===: P makes for example Alignment view 2a to the width direction _ offset situation 201224683 = mask position control 3G, also makes the downstream touch mask 123 and 12 = quasi-flag, 2a offset amount to the width of the film ^ In the inner side of the film 2, the distance from the mark 2a ^ film 124 is maintained at a certain interval. As shown in Fig. 1, that is, ί, can also correct the position of the movement direction Π 12 of the movement of ' 12, whereby the exposure position of the diaphragm 2 is not shifted by 2, and stable exposure can be performed. In the present embodiment, it is described that the area of the one-pixel segment is divided into seven sections, but the polarizing film for the 3D display can be mounted by the exposure type. That is, if the light is exposed by gold, for example, for each of the adjacent regions in the width direction of the film, the area of the element, the exposure of the linearly polarized light that alternately illuminates the P-polarized light and the s-polarized light = Each of the texil sheets composed of a plurality of pixels makes the orientation amount of the alignment material film different, thereby obtaining an orientation film having the same function as the plate in the film surface, and having an orientation film having the same function as the plate. The obtained film is used as a polarizing film, that is, if the light for image display of the linearly polarized light is transmitted through the polarizing film, it is composed of a plurality of pixels and is wider in the width direction of the film. The extended representation column emits transmitted light of a circularly polarized light whose rotation directions are opposite to each other. In the diaphragm exposure apparatus of the full-volume continuous manufacturing method, the present invention is used in the film exposure apparatus of the full-volume continuous manufacturing method, for example, in the case of the right-eye and the left-eye of the 3D display. It is possible to continuously perform exposure by correcting the zigzag of the diaphragm with high precision. [Schematic Description of the Drawing] [Fig. 1] shows a film exposure apparatus according to an embodiment of the present invention, which is implemented by aligning the labels. Fig. 2 is a view showing an exposure step performed by a mask on the downstream side in a film exposure apparatus according to an embodiment of the present invention. [Fig. 3] In the film exposure apparatus according to the embodiment of the present invention, a plan view of the mask 201224683. [Fig. 4] is a diagram showing a control portion of the diaphragm position. [Fig. 5] A diagram showing an introduction mark forming portion by an example. Port ϊί : 52ίϊ = type of diaphragm production line - example of the figure. Fig. 10 is a perspective view showing an exposure apparatus of a cavity knife type as an example. A diagram of the exposure device. '..., the configuration of the multi-channel light source in the moving direction of the sheet [Description of main component symbols] 1 : Exposure device 2 : Diaphragm 2a : Alignment mark 2b : Import mark 2c = Pattern 3: Pre-processing unit 4: Slit type Coater 5: Drying device 6: Temperature adjusting device 9: Roller 10 = Platform 11 - Exposure light source 12: Mask 12ar Observation window 12b = Light blocking pattern 13: Laser marker 13a = Frame table 201224683 13b: Transport portion 13c: Marking Part 14 : Alignment laser marker 15 : Diaphragm introduction position detecting portion (linear CCD) 16 : Alignment mark detecting portion 17 : Mask platform 20 : Diaphragm substrate 21 . Exposure material film 30 : Mask Position control unit 31: Video processing unit 32: Calculation unit 33: Memory 34: Motor drive control unit 35: Light source drive unit 36: Mask platform drive control unit 37: Control unit 80: Supply reel 81: Reel reel 121 : First mask 122 : Second mask 123 : Third mask 124 : Fourth mask 1200 : Frame 1210 : Pattern forming portion 1210a : Patterns A, B, C, D : Exposure area

2020

Claims (1)

201224683 • 七、申請專利範圍: 膜片,從法’使在則基材上形成有曝光材料膜之 取捲軸,在Ϊ段ίί問,ί供給捲轴轉移到捲取曝光後的膜片之捲 光光線,s透過遮罩對該膜片的該曝光材料膜照射曝 光先Ϊ藉此職遮罩的瞧曝光在該曝光材料膜; 該膜片曝光方法的特徵為: 、 方,ίΐΐϋϊ的寬方向兩側之膜片基材供給用區域之至少一 、iif供給㈣域間的曝光區域之方式,形成 ϊίίίΐ Li側部曝光材料膜照射對準用曝光光線而形 的位置f〜 〜對準標魏來彳貞測則之曲折,關整該遮罩 峻盥圍第1項之膜片曝光方法,其中,該曝光光 曝光光線,係使用不_雷射光,或併用同一 3、一種膜片曝光裝置,其具有: 曝光光源,射出曝光光線; 遮罩,形成有用以對膜片進行曝光的圖幸; 射在統’將從該曝光光源射出的曝光光線,透過該遮罩照 祕部二於膜片基材上形成有曝光材料膜之膜片’從 片之供給捲軸轉移到捲取曝光後的膜片之捲取捲軸, 在从』間,使該遮罩以及該光學系統的曝光位置通過; U ’對賴片基材的寬方向兩側之膜片基材供 …區域之至少-方,照射對準標誌形成用之雷射光;以及 控制》P ’利用該對準標誌來伯測膜片曲折,以調整該遮罩的 位置; 該膜片曝光裝置’其特徵在於: 該膜片,在絲自該對準標·光源的雷射光照射的區域形 藉著由該雷射光所實行的照射而於該側部 - 曝光材料膜形成對準標魏。 21 201224683 4、如申請專利範圍第3項之膜片曝光裝置,其中,該曝光光 源與該對準標誌用光源,係使用不同的雷射光源,或併用同一雷 射光源。 22201224683 • VII. Patent application scope: Membrane, from the method of 'making a reel on the substrate with the exposed material film, in the ί segment ίί, ί supply reel transferred to the film roll after the coil exposure The light ray, s is exposed to the exposed material film of the film through the mask, and the enamel of the mask is exposed to the film of the exposed material; the film exposure method is characterized by: square, width direction of the ΐΐϋϊ At least one of the membrane substrate supply regions on both sides, iif is supplied to the (four) region between the exposure regions, and the Li-side exposure material film is irradiated to align with the exposure light to form a position f~~ In the meantime of the test, the film exposure method of the first item of the mask is closed, wherein the exposure light is exposed to light, or the same 3, a film exposure device is used. The method has: an exposure light source for emitting exposure light; a mask forming a photo useful for exposing the diaphragm; and an exposure light emitted from the exposure light source through the mask to the secret portion base The film sheet on which the film of the exposed material is formed is transferred from the supply reel of the sheet to the take-up reel of the film after the reeling exposure, and the mask and the exposure position of the optical system are passed through; U 'pair The diaphragm substrate on both sides of the wide-side substrate of the substrate substrate is provided with at least a square of the area for illuminating the laser light for forming the alignment mark; and the control "P" is used to test the film to be bent, Adjusting the position of the mask; the film exposure device is characterized in that: the film is irradiated by the laser light from an area irradiated by the laser light from the alignment target light source The side-exposure material film forms an alignment mark. The film exposure apparatus of claim 3, wherein the exposure light source and the light source for the alignment mark use different laser light sources or use the same laser light source in combination. twenty two
TW100131521A 2010-09-06 2011-09-01 Film exposure apparatus and film exposure method TWI550367B (en)

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