201221613 六、發明說明： 【發明所屬之技術領域】 本發明係關於可將Ic晶片、液晶顯示器（LCD)中的 液晶面板（LCD面板）等之電路構件加以電氣及機械性地 連接的異方ί±導電膜、以及使用該異方性導電膜的接合 體、及該接合體之製造方法。 【先前技術】 向來’就連接電路構件的手段而言，—般使用將有分 散導電性粒子的熱硬化性樹脂塗布於剝離薄膜的帶狀連接 材料（例如’異方性導電膜（ACf ; Anisotropic Conductive Film))。 此異方性導電膜係例如，以將撓性印刷基板（flexible printed circuit ’ FPC)或IC晶片之端子、與LCD面板之玻 璃基板上所形成的ITO (氧化錮錫，Tin 〇xide)電 極加以連接的情形為開始，並使用於各種端子彼此接著的 同時作電氣連接的情形。 近年之異方性導電膜於低溫短時間連接的需求增加， 將丙烯酸系樹脂作為黏接劑的異方性導電膜正被使用著。 然而，將丙烯酸系樹脂作為黏接劑的異方性導電膜與環氧 系異方性導電膜相比下’極性降低（因樹脂中之經基 (hydroxyl group)量降低）’有不能充分滿足對於電路構件所 形成的配線材及絕緣膜的接著性的問題。 因此，關於間隔於第一電路構件及第二電路構件之 201221613 間，使用於接著前述第一電路構件及前述第二電路構 電路連接用接著薄膜，已提議具備黏著劑層A及於該㈣ 劑層A上積層的黏著劑層B，具有特定剝離 前 黏著劑層B之厚度為〇.1μιη〜5 〇 則述 miwn、 υμΐΏ的電路連翻接著薄膜 獻。。然而’前述電路連接用接著薄膜，為了使 屋者别的異方性導電膜之貼附工程良好地進行，而設計了 絕緣性樹脂層，但對於電路構件 並未充分檢討。 冑件料成的絕緣膜的接著性 專利文獻2中已明示含有單官能丙稀酸酿的異 雖有關於對絕緣膜（氮切）之接著性的記載十 :為使用早官能丙烯酸醋，有引起黏接劑之凝集力降低， 無法壓抑導粒子的财，㈣連接⑽ _。 因此，企求於配置絕緣膜的電路構件之連接上，可。以 ,溫紐時間壓著，導通電阻低且接著性優異的显方性導電 、方=❹該異方性導電膜的接合體、及該接合體之製 造方法為目前的現狀。 [先前技術文獻] [專利文獻] [專利文獻1] 特開2008-288551號公報 [專利文獻2] 特開2008-291199號公報 【發明内容】 [發明之概要] [發明所欲解決的課題] 201221613 本發明係以解決一直以來的前述問題，而達成以下目 的為課題。即，本發明係以提供於配置絕緣膜的電路構件 之連接上，可以低溫短時間壓著，導通電阻低且接著性優 異的異方性導電膜、以及使用該異方性導電膜的接合體、 及該接合體之製造方法為目的。 [用以解決課題的手段] 就解決前述課題的手段而言，如以下所示。即： <ι>一種異方性導電膜，其為用以將至少一部份形成 絕緣膜的第一電路構件及第二電路構件加以電氣連接的異 方性導電膜，其特徵為： 其具有含導電性粒子的導電性粒子含有層、及由絕緣 性黏著劑所形成的絕緣性接著層， 前述絕緣性接著層之平均厚度為0.5μιη〜3μιη， 使前述絕緣性接著層硬化後之硬化物於3(TC的儲存彈 性模數（storage elastic modulus)為 500MPa〜l,500MPa。 <2>前述<1>記載之異方性導電膜，其中導電性粒 子含有層及絕緣性接著層含有膜形成樹脂、自由基聚合性 化合物、及聚合引發劑。 <3>—種接合體，其具有至少一部份形成絕緣膜的第 一電路構件、第二電路構件、及間隔於前述第一電路構件 與前述第二電路構件之間而將前述第一電路構件與前述第 二電路構件加以電氣連接的向異方性導電層，其特徵為： 前述向異方性導電層係由前述<1>或<2>任一項記 載之異方性導電膜所形成，且 201221613 -雷：2第一電路構件側配置絕緣性接著層，於前述第 一電路構件側配置導電性粒子含有層。 如别述<3> §己載之接合體，其中絕緣膜為含有 氮化矽的膜。 < 5>如刖述<3>或<4>記載之接合體，其中第一電 路構件為玻璃基板及_基板任―者，第二電路構件為繞 性基板及COF (覆晶薄膜（ehipGnfilm))基板任一者。 <6>如⑴述<5> $載之接合體，其中玻璃基板為具 有IZO的玻璃基板。 <7> 一種接合體之製造方法，其係製造如前述<3> =6包>含中任一項記載之接合體的接合體之製造方法，其特 路構構件、前述第二電 、使/、於第電路構件相丨1两？番總妓· 性接著層’ Μ二電路構件側配料紐粒子含有層y 件及雷:係藉由加熱押壓構件將前述第-電路構 第-i路構似A構件任—者力以加熱及押壓，㈣前述 苐電路構件及前述第二電路構件加以接合。 4 [發明之效果] 依據本發明，可解、、表—古、，+ 述目的，於配置電 間壓著，可提供導通電阻 ：：溫短時 ==及使贱㈣轉電_接讀、賴接合體之= 201221613 【實施方式】 [用以實施發明之形態j (異方性導電膜） 本發明之異方性導電膜為用 電路構件作電氣連接的異方 4電路構件及第： 物4人士氐·α 導電膜’其至少具有導雷作 粒子含有層及絕緣性接著 <第-電路構件 > ⑽咖有其他層。 就前述第-電路構件， =rr，並未特-一= ::二可帶舉等例形成物之玻璃基板、_基板、 就前述絕緣膜而言，並未特 宜選擇，例如，可舉例含有氮化石夕的膜等；7 口應目的而適 =前述絕緣膜之形狀而言，並未特別限制 的而適宜選擇，例如，可舉例圖案（帅咖）狀等因應目 就前述玻璃基板而言，並未特別 適宜選擇，例如，可盤々丨目女應目的而 板等。 八 （氧化銦錫）的玻璃基 廿4 4主述帛㈣構件具有配線材。就前述配線材而言， 並未特別限制，可因庫曰的 备 ° m Γ 適宜選擇，例如，銘、鉻、 •銅鉬荨之金屬；1TO、IZO等之金屬 極材料）等。 金屬氧化物（透明電 就前述第一電路構件之夹s而士 ㈣胺命ο 午表面而5例如’可舉例前述 、、、邑緣膜與㈣配線材所形成的表面。就此表面之態樣而 201221613 言，例如，可舉例前 則配列的態樣n s緣膜與前述配線材係交互而有規 置的態樣等。 <弟'一電路構件> 就刖述第二電路 的而適宜選擇，例如， s ’並未特別限制，可因應目 onfilm，覆晶薄膜）’可舉例撓性基板（FPC)、COF (chip PDP基板、破璃絮基板、坡螭製之LCD基板、玻璃製之 前述第h之有機£1基板等。 月』述弟—電路構件且古 並未特別限制， /、有配線材。就前述配線材而言， J四應目沾 、201221613 VI. Description of the Invention: [Technical Field] The present invention relates to an electrical and mechanical connection of an electronic component such as an LCD chip or a liquid crystal panel (LCD panel) in an LCD wafer (LCD). a conductive film, a bonded body using the anisotropic conductive film, and a method of producing the bonded body. [Prior Art] In order to connect a circuit member, a strip-shaped connecting material in which a thermosetting resin having dispersed conductive particles is applied to a release film (for example, an anisotropic conductive film (ACf; Anisotropic) is generally used. Conductive Film)). The anisotropic conductive film is, for example, a ITO (tin yttrium oxide) electrode formed on a flexible printed circuit (FPC) or a terminal of an IC chip and a glass substrate of the LCD panel. The case of the connection is the start and the case where the various terminals are electrically connected to each other at the same time. In recent years, there has been an increasing demand for an anisotropic conductive film to be connected at a low temperature for a short period of time, and an anisotropic conductive film using an acrylic resin as an adhesive is being used. However, the anisotropic conductive film in which the acrylic resin is used as the binder is less in polarity than the epoxy-based anisotropic conductive film (because the amount of the hydroxyl group in the resin is lowered) The problem of the adhesion of the wiring member and the insulating film formed by the circuit member. Therefore, it is proposed to provide the adhesive layer A and the (four) agent for use in the subsequent film for connecting the first circuit member and the second circuit structure circuit between the 201221613 of the first circuit member and the second circuit member. The adhesive layer B laminated on the layer A has a thickness of the adhesive layer B before the peeling is 〇.1μιη~5 〇, and the circuit of miwn, υμΐΏ is connected to the film. . However, the insulating film layer was designed in order to allow the adhesion of the anisotropic conductive film of the house to be good, but the circuit member was not sufficiently reviewed. The adhesiveness of the insulating film formed of the component material is disclosed in Patent Document 2, and the inclusion of the monofunctional acrylic acid is described in relation to the adhesion to the insulating film (nitrogen cutting). Causes the cohesive force of the adhesive to decrease, unable to suppress the wealth of the guiding particles, (4) connection (10) _. Therefore, it is desirable to connect the circuit members of the insulating film. In the case where the temperature is pressed, the conduction resistance is low and the conductivity is excellent, and the bonded body of the anisotropic conductive film and the method for producing the bonded body are currently in the state of the art. [PRIOR ART DOCUMENT] [Patent Document 1] JP-A-2008-288551 [Patent Document 2] JP-A-2008-291199 SUMMARY OF INVENTION [Summary of the Invention] [Problems to be Solved by the Invention] 201221613 The present invention solves the above-mentioned problems and achieves the following objects. In other words, the present invention provides an anisotropic conductive film which can be applied to a circuit member in which an insulating film is disposed, can be pressed at a low temperature for a short period of time, has low on-resistance and excellent adhesion, and a bonded body using the anisotropic conductive film. And a method of manufacturing the joined body. [Means for Solving the Problem] The means for solving the above problems are as follows. Namely: <ι> an anisotropic conductive film which is an anisotropic conductive film for electrically connecting at least a portion of the first circuit member and the second circuit member which form the insulating film, and is characterized in that: An electroconductive particle-containing layer containing conductive particles and an insulating adhesive layer formed of an insulating adhesive, wherein the insulating adhesive layer has an average thickness of 0.5 μm to 3 μm, and hardens the insulating adhesive layer. The storage elastic modulus of 3 (TC) is 500 MPa to 1,500 MPa. The anisotropic conductive film according to the above <1>, wherein the conductive particle-containing layer and the insulating adhesive layer are provided. a film forming resin, a radical polymerizable compound, and a polymerization initiator. [3] A bonding body having at least a portion of a first circuit member forming an insulating film, a second circuit member, and a spacer An anisotropic conductive layer electrically connecting the first circuit member and the second circuit member between a circuit member and the second circuit member, wherein: the anisotropy The conductive layer is formed of the anisotropic conductive film according to any one of the above-mentioned <1> or <2>, and 201221613 - Ray: 2 is disposed on the first circuit member side, and the insulating layer is disposed on the first circuit. The conductive particle-containing layer is disposed on the member side. As described in the above <3>, the bonded body is a film containing tantalum nitride. <5> As described above <3> or <4> In the bonded body described above, the first circuit member is a glass substrate or a substrate, and the second circuit member is a wound substrate or a COF (ehip-on-film) substrate. <6> (1) <5> The bonded body in which the glass substrate is a glass substrate having IZO. <7> A method for producing a bonded body, which is produced by any of the above <3>=6 packs> In the method for producing a bonded body of the bonded body, the special path member, the second electric device, the second circuit member, and the second circuit member are disposed on the side of the second circuit member side. Layer-containing y-piece and mine: the first-circuit configuration of the first-circuit structure is formed by heating the pressing member (4) The 苐 circuit member and the second circuit member are joined together. 4 [Effects of the Invention] According to the present invention, the solution can be solved, the table is ancient, and the object is described in the configuration. When the electric pressure is pressed, the on-resistance can be provided: when the temperature is short, the temperature is short, and the 贱 (4) is converted to electricity. _ _ _ _ _ _ _ _ _ _ _ _ _ The anisotropic conductive film of the present invention is a heterodyne four-circuit member electrically connected by a circuit member, and a fourth member of the present invention, which has at least a conductive particle-containing layer and an insulating property. - Circuit component > (10) The coffee has other layers. With respect to the above-mentioned first-circuit member, the glass substrate, the _substrate, and the above-mentioned insulating film of the above-mentioned insulating film are not particularly selected, for example, as an example. A film containing a cerium nitride film or the like; and the shape of the insulating film is not particularly limited, and may be appropriately selected, for example, a pattern (a handsome coffee) or the like may be used for the glass substrate. It is not particularly suitable for selection, for example, it can be used for the purpose of women. Eight (Indium Tin Oxide) glass base 廿 4 4 The main 帛 (4) member has a wiring material. The wiring material is not particularly limited, and may be appropriately selected from the following materials, for example, metals such as chrome and copper molybdenum, metal materials such as 1TO and IZO, and the like. The metal oxide (transparent electricity is the surface of the first circuit member, and the surface of the first circuit member, and the like, for example, the surface formed by the foregoing, the rim film and the (4) wiring material. In the case of 201221613, for example, the state in which the ns edge film is arranged in the front and the wiring layer are alternately arranged, etc. <Different 'one circuit component> For example, s 'is not particularly limited, depending on the onfilm, flip-chip film) can be exemplified by flexible substrate (FPC), COF (chip PDP substrate, glazed substrate, slab LCD substrate, glass) The organic layer 1 substrate of the above-mentioned hth, etc. The circuit component is not particularly limited, and there is a wiring material. In terms of the wiring material, J should be seen.
NiSn、NiAu等。〜的而適宜選擇’例如，可舉例Cu、 =導電性粒子含有層> 就前述導電性教 子的層即可，並未特及3有層而言，只要為含有導電性粒 如，可舉例至少含有^限制’可因應目的而適宜選擇，例 由基聚合性化合物、=性粒子，且含有獏形成樹脂、自 偶合劑等之其他成分引發劑，更因應必要而含有矽烷 -導電性粒子_ 跣則述導電性粒子 ，可因應目的 被覆樹脂粒子 而適宜選擇，例如，可:二並未特別丨 等。 U j舉例金屬粒子、. 机則迹金屬粒子而言 金、鈀等。此箅可#用η。 ，β牛例鎳、鈷、銀、銅 等中，二/ ?早獨1種，亦可併用2種以上^ 亦可使用此等之表面上施予Α 專表面氧化為目的 表知予金、㈣粒子。再者，亦可啦 201221613 用 此等之表面施以金屬突起或有機物作的絕緣皮膜。 就前述金屬被覆樹脂粒子而言，例如 、 之表面以鎳、銅、金、及鈀任—者之金屈 1对月曰心 嘗之金屬破覆的粒 樣地，亦可使用前述樹脂芯之最外表面施以金、 再者，亦可❹前述樹脂芯之表面施以金屬突有物 作的絕緣皮膜。 乂有機物 就對前述樹脂芯之金屬之被覆方法而言，並 制，可因應目的而適宜選擇，例如，可兴 寺別限 麟法等。 了舉Μ轉鍍敷法、 就前述樹脂芯之材料而言，並未特別限制， 的而適宜賴，勤，可舉例笨乙烯二W笨人:目 苯并胍胺樹脂、交聯聚苯乙烯樹脂、_ 體、 二氧化矽複合樹脂等。 9本乙烯- 就前述導電性粒子含有層中的前述導電性粒子之人旦 而言’並未❹m制，可經由電路構件之轉 = 接面積等而適宜調整。 &連 -膜形成樹脂- 就前述膜形成樹脂而言，並未制限制，可因應目的 而適宜選擇’例如’可舉例苯氧基樹脂、環氧基樹脂、不 飽和聚酯樹脂、飽和聚酯樹脂、胺基甲酸酯樹脂、丁二烯 樹脂、聚醯亞胺樹脂、聚醯胺樹脂、聚烯烴樹脂等。前述 膜形成樹脂係可使用單獨丨種，亦可併用2種以上。此等 中基於製膜性、加工性、連接信賴性之觀點，以苯氧基 樹脂為特佳。 201221613 刚述本氧基樹脂係為由雙盼A及表氣醇 (epiChl〇rohydrin)所合成的樹脂，可使用適宜合成者，亦 可使用市售品。 一就前述導電性粒子含有層中的前述膜形成樹脂之含量 而言，並未特別限制，可因應目的而適宜選擇。 -自由基聚合性化合物- 就前述自由基聚合性化合物而言，並未特別限制，可 因應目的而適宜選擇’例如，可舉例丙稀酸化合物、液狀 丙烯酸酯等，具體而言，可舉例丙烯酸甲酯、丙烯酸乙酯、 丙烯酸異丙醋、丙烯酸異丁酉旨、含有磷酸基的丙烯酸酯、 乙二醇二丙稀酸酯、二乙二醇二丙稀酸酉旨、三經甲基丙烧 二丙烯酸酉旨、二羥甲基三環癸烷二丙烯酸酯、四亞甲美二 醇四丙婦酸酉1、2_經基-1，3-二两稀醯氧基丙燒、2,2_雙[4_ 基甲氧基）苯基]丙燒、2,2_雙[4_ (丙烯酿氧基 乙氧基）苯基]丙烧、一壞戊埽基丙稀酸酯、三環癸烧基丙 稀酸醋、三（丙稀醯氧基乙基）三聚異氰酸酯、胺基甲酸 酯丙稀酸酉旨、環氧基丙稀酸酉旨等。又，前述丙稀酸酉旨亦可 使用甲基丙婦酸醋。此等可使用單们種，亦可併用2種 以上。 就前述導電性粒子含有層中的前述自由基聚合性化合 物之含量而言，並未特職制，可因應目的而適宜 -聚合引發劑- 2前述聚合引發劑而言，只要可㈣述自由基聚 化合物聚合者即可，並未特別限制，可因應目的而適宜選 10 201221613 擇，藉：熱:戈光而發生自由基的聚合引發劑為較佳。 就剷述藉由熱或光而發生自由 ==為9(rc〜_，110小時半衰期溫度為 40 C以上的有機過氧化物為更佳。 為了以10秒鐘以下進行接合，丨分鐘半衰期溫 ⑽。α下料難。則、特㈣溫度為啊以下^為 冷藏5 c以下之保管有時變困難。 就藉由熱而發生自由基的聚合引發劑而言，例如，可 舉例有機過氧化物、偶氮化合物等。就前述有機過氧化物 而言，例如，可舉例過氧化苯甲醯、三級丁基過氧化物等。 就前述偶氮化合物而言，例如’可舉例2,2，_偶氣雙（4_甲 氧基-2,4-二甲基戊腈）、2,2，_偶氮雙（2,4_二甲基戊腈） (V-65)、2,2’-偶氮雙異丁腈（ΑΙΒΝ)、2,2，_ 偶氮雙（2_甲 基丁腈）、1，1-偶氮雙（環己烷_；!_甲腈）、2,2，·偶氮雙[2-甲 基Ν [1,1-雙（赵基甲基）_2-故基乙基]丙醯胺]、二甲基2,2, _ 偶氮雙（2-曱氧基丙酸酯）等。此等可使用單獨丨種，亦 可併用2種以上。 就經由光而發生自由基的聚合引發劑而言，例如，可 舉例苯烷基酮（alkylphenone)、苯偶姻（benzoin)'二苯甲 酮（benzophenone)、二羰基（dicarbonyl)化合物、噻噸酮 (thioxanthone)、醯基膦氧化物（acyiphosphineoxide)、或 此等之衍生物等。此等可使用單獨1種，亦可併用2種以 201221613 就前述導電性粒子含 而言，並未特別限制中的前述聚合引發劑之含量 石夕烧偶合劑- 〜目的而適宜選擇。 就前述矽烷偶合劑而兮， 而適宜選擇，例如，可未特別限制’可因應目的 矽烧偶合劑、硫醇系石夕严儒二'—系石夕燒偶合劑、丙烯酸系 就前述導電性==、胺系魏偶合劑等。 而言，並未特別限制，可因庫曰目中=前述石夕烧偶合劑之含量 就前述導電性粒子含有^^適宜選擇。 ,lf ^ 有層之平均厚度而言，並未特別 4_〜30_為更佳一、f ，為較佳， 勹文佳。刖述平均厚度低於 無法充分填充導電性粒子含有層的情形，：過二電路:有 有無法充分排除導電性粒子含有層而°卿、 形。前述平均厚度於前述較佳範圍；，導良的情 被適=填充，於接著性、及導通信賴 ^含有層 其i前述平均厚度為測量任意5處:之=有利的。 〈絕緣性接著層〉 处予之千岣値。 f性接著層係由絕緣性黏著劑所形成 的而適宜選擇=者劑:言’並未特別限制，可因痛 基聚合性二物二Γ例至少含有卿成樹場2NiSn, NiAu, etc. For example, Cu or = conductive particle-containing layer can be exemplified. The layer of the conductive conductive member can be used, and the layer having no conductive layer is not particularly limited as long as it contains conductive particles. It is preferable to contain at least a restriction, and it is preferable to use a base polymerizable compound or a =-form particle, and it contains a component formation initiator, such as a oxime-forming resin and a self-coupling agent, and contains a decane-electroconductive particle as needed. The conductive particles may be appropriately selected by coating the resin particles in accordance with the purpose. For example, the second embodiment may be omitted. U j is exemplified by metal particles, and the metal particles of the machine are gold, palladium, and the like. This can be used # with η. , β, nickel, cobalt, silver, copper, etc., two / as early as one type, can also be used in combination of two or more ^ can also be used on the surface of the surface of the application of Α special surface oxidation for the purpose of knowing gold, (4) Particles. Furthermore, it is also possible to use 20121613 to apply an insulating film made of metal protrusions or organic matter to these surfaces. In the case of the metal-coated resin particles, for example, the surface of the metal-coated resin particles of nickel, copper, gold, and palladium may be used, and the resin core may be used. The outermost surface is coated with gold, and further, an insulating film made of a metal protrusion may be applied to the surface of the resin core.乂 Organic matter The method of coating the metal of the resin core described above can be appropriately selected depending on the purpose. For example, the Ke Xing Temple is limited to the lining method. For the material of the foregoing resin core, there is no particular limitation on the material of the resin core, and it is suitable for use. For example, it can be exemplified by stupid ethylene and two W stupid people: benzobenzamide resin, crosslinked polystyrene Resin, _ body, cerium oxide composite resin, and the like. In the case of the above-mentioned conductive particles in the conductive particle-containing layer, the amount of the ethylene can be appropriately adjusted by the conversion of the circuit member or the like. <Continuous-film-forming resin - There is no limitation on the film-forming resin, and a phenolic resin, an epoxy resin, an unsaturated polyester resin, a saturated polymer can be appropriately selected depending on the purpose. An ester resin, a urethane resin, a butadiene resin, a polyimide resin, a polyamide resin, a polyolefin resin, or the like. The film-forming resin may be used alone or in combination of two or more. Among these, phenoxy resin is particularly preferred from the viewpoints of film formability, workability, and connection reliability. 201221613 The oxy-resin is a resin synthesized from bispan A and epiChl〇rohydrin, and a suitable synthesizer can be used, and a commercially available product can also be used. The content of the film-forming resin in the conductive particle-containing layer is not particularly limited, and may be appropriately selected depending on the purpose. - The radically polymerizable compound is not particularly limited, and may be appropriately selected depending on the purpose. For example, an acrylic acid compound, a liquid acrylate or the like may be exemplified, and specifically, for example, Methyl acrylate, ethyl acrylate, isopropyl acrylate, isobutyl acrylate, acrylate containing phosphate group, ethylene glycol diacrylate, diethylene glycol dipropylene acid, trimethyl methacrylate Burning diacetate, dimethylol tricyclodecane diacrylate, tetramethylene glycol tetrapropane phthalate 1, 2 _ base-1,3-di-dioxaoxypropane, 2 , 2_bis[4_ylmethoxy)phenyl]propane, 2,2_bis[4_(acrylic ethoxyethoxy)phenyl]propane, a tert-amyl acrylate, three Cyclodecyl acrylate, tris(propylene methoxyethyl) trimeric isocyanate, urethane acrylate, epoxy acrylate, and the like. Further, the acrylic acid vinegar may be used as the acrylic acid vinegar. These may be used alone or in combination of two or more. The content of the radical polymerizable compound in the conductive particle-containing layer is not particularly suitable, and may be appropriately used depending on the purpose - the polymerization initiator - 2, the polymerization initiator may be a radical polymerization The compound is polymerized, and it is not particularly limited, and it is preferable to select 10 201221613 for the purpose, and it is preferable to use a polymerization initiator which generates a radical by heat: Gome. It is more preferable to describe the organic peroxide which is free by heat or light ==9 (rc~_, 110 hours half-life temperature is 40 C or more. In order to carry out bonding for 10 seconds or less, the half-life of the minute is required. (10). It is difficult to feed the α. The temperature of the special (4) is less than or equal to the storage of 5 c or less. In the case of a polymerization initiator which generates radicals by heat, for example, organic peroxidation can be exemplified. For the above-mentioned organic peroxide, for example, benzamidine peroxide, tertiary butyl peroxide, etc. may be mentioned. For the above azo compound, for example, 'example 2, 2 , _ Odor bis (4-methoxy-2,4-dimethylvaleronitrile), 2,2,-azobis(2,4-dimethylvaleronitrile) (V-65), 2, 2'-azobisisobutyronitrile (ΑΙΒΝ), 2,2,_ azobis(2-methylbutyronitrile), 1,1-azobis(cyclohexane_;!_carbonitrile), 2 ,2,·Azobis[2-methylindole[1,1-bis(Zhaojimethyl)_2-propenylethyl]propanamine], dimethyl 2,2, _ azobis(2-indole Oxypropionate), etc. These may be used alone or in combination of two or more. In the case of a polymerization initiator which generates radicals by light, for example, an alkylphenone, a benzoin' benzophenone, a dicarbonyl compound, a thioxanthone can be exemplified. (thioxanthone), acylphosphine oxide, or a derivative thereof, etc. These may be used alone or in combination of two types of 201221613, and the conductive particles are not particularly limited. The content of the above-mentioned polymerization initiator is preferably selected in accordance with the purpose of the present invention. The above-mentioned decane coupling agent is preferably selected, and, for example, the oxime coupling agent or the thiol dysite may be used without particular limitation.夕严儒二'-------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------- The content of the conductive particles is suitably selected. The average thickness of the layer of lf ^ is not particularly 4_~30_ is preferably one, f, which is preferable, 勹文佳. Less than can not fully fill the conductivity In the case where the particles contain a layer, the second circuit: there is a possibility that the conductive particle-containing layer cannot be sufficiently excluded, and the average thickness is in the above-mentioned preferred range; the favorable condition is suitable for filling, and the adhesion is And the conductive layer of the conductive layer is i, the average thickness of the above is measured at any five places: it is advantageous. <Insulating adhesive layer> is given to the Millennium. The f-based adhesive layer is formed by an insulating adhesive. Choice = agent: 言' is not particularly limited, but can be based on pain-based polymerizable two-object bismuth case containing at least Qingcheng tree field 2
必要，含有# “丨發劑之絕緣性黏著劑，P ^ 楗偶合劑等之其他成分的絕綾更因應 =膜形成樹腊、前述自由基聚合性化合％ ί著劑。就 發劑、及前逑矽 物、則述聚八引 夕说偶合劑而言，可舉例與前 。弓1 个黾性教子 12 .201221613 含有層之説明中記載的前述膜形成樹脂、前述自由基聚合 性化合物、前述聚合引發劑、及前述矽烷偶合劑相同者。 刖述絕緣性接著層之平均厚度為〇.5μπι〜3μιη， Ιμιη〜3μιη為較佳。前述平均厚度低於〇 5μιη時，接著強度 會降低，一旦超過3 μιη，則導通電阻會變大。 其中’前述平均厚度為測量任意5處時之平均値。 使剞述絕緣性接著層硬化後之硬化物之30°C的儲存彈 性模數係為500MPa〜l,500MPa，以500MPa〜l,000MPa為較 佳。前述儲存彈性模數低於5〇〇MPa時，導通電阻變高， 超過l，500MPa時，接著強度會變低。 如述儲存彈性模數’例如，可藉由以下之方法加以測 量。 於經剝離處理的PET上形成平均厚度為2〇μηι之前述 絕緣性接著層。接著，將此絕緣性接著層放入20(TC之加熱 爐’藉由30分鐘加熱使前述絕緣性接著層硬化，而獲得硬 化物。將此硬化物自經前述剝離處理的pET剝離，切成 3^inmx〇.4mm之長條形，作為測量試料。此測量試料之 C的儲存彈性模數使用動態黏彈性（If necessary, the insulating agent containing #丨发剂, the other components of the P ^ 楗 coupling agent, etc., should be more indispensable = film-forming wax, the above-mentioned radical polymerizable compound 5% agent. For example, the film-forming resin, the radical polymerizable compound, and the above-mentioned film-forming resin, which are described in the description of the layer, may be exemplified. The polymerization initiator and the decane coupling agent are the same. The average thickness of the insulating adhesive layer is preferably 55 μm to 3 μm, and Ιμηη to 3 μηη. When the average thickness is less than μ5 μm, the strength is lowered. When it exceeds 3 μm, the on-resistance becomes large. The 'average thickness is the average 値 when measuring any 5 places. The storage elastic modulus of the cured product after the insulating layer is hardened is 500 MPa to 1,500 MPa, preferably 500 MPa to 1,000 MPa. When the storage elastic modulus is less than 5 MPa, the on-resistance becomes high, and when it exceeds 1,500 MPa, the strength is lowered. mold The number ' can be measured, for example, by the following method. The above-mentioned insulating adhesive layer having an average thickness of 2 μm is formed on the peeled PET. Next, this insulating adhesive layer is placed in a 20 (TC heating furnace). The hardened material was obtained by hardening the insulating adhesive layer by heating for 30 minutes. The cured product was peeled off from the pET subjected to the above-mentioned peeling treatment, and cut into strips of 3 μm×〇.4 mm to prepare a measurement sample. Measuring the storage elastic modulus of the sample C using dynamic viscoelasticity (
VlSC〇elasticity)測量器（DDV-01FP，ORIENTEC 公司製， 頻率11Hz，升溫速度3ΐ/分鐘）來測量。 就使如述絕緣性接著層硬化後之硬化物之3〇〇c的儲存 彈性模數成為500MPa〜l，500MPa的方法而言，並未特別限 制，可因應目的而適宜選擇，例如，可舉例形成前述絕緣 性接著層之際，適宜調整原材料（例如，前述膜形成樹脂、 13 201221613 二:由基聚合性化合物、前述聚合引發 的方法。於適宜調整前獅合量下， 之摻合量 例如，經由增加前述自由基聚合性化===彈性 可提南儲存彈性模數。 之摻合董， (接合體） 本發明之接合體係至少且右笛 構件、向異方性導電層，；因==件、第二電路 就前述第-電路構件、及：而；其他構件。 血，丨t 千及則述第二電路構侔而丄 舉例與於本發明之前述異方性導電膜之説明，可 第一電路構件、及前、 。己载的前述 1吩饵仟汉削述苐二電路構件相同者。 前述向異方性導電層係由本發明之 所形成。前述向異方性導電層係間隔於前述第：導電膜 及前述第二電路構件之間， 、別这第—電路構件 二電路構件作電氣連接。、則^ 一電路構件及前述第 前述接合體中，於前H、势 ^ 性導電膜之前述絕緣性接S — ί路構件側配置前述異方 前述異方性導電膜之前路，置 際，可獲得前述絕緣性接來製心述接合體之 好的接合體。 钱者層為適度地流動，且接著性良 又，於前述接合體，箭 電路構件卿成的絕、_=_性⑽廣與於前述第一 (接合體之製造方法） 發月之接°體之製造方法至少含有齡置卫程及接合 14 201221613 工程’更因應必要而含有其他工程。 依據本發明之接合體之 體被製造。 乃电本發明之前述接合 <配置工程> 就前述配置工程而言，〇 件、前述第二電路構# ”、、配置則述第一電路構 接合體中，成為於=第^異方性導電膜使其於前述 著層，於前述第二電路構件侧配::牛=置前述絕緣性接 即可，並未特別限制，可因應目的:電^粒子含有層 就前述導電性粒子含 乂 且&擇 第-電路槿杜义則述絕緣性接著層、前述 第電路構件、前述第二電路構件狀 而言，可各別舉例於本^ 方性導電膜 所記載者。 料月之則述異方性導電膜之説明中 <接合工程> 执及押壓^:工知而δ ’只要為藉由加熱押壓構件而加 ,, 剛逃第—電路構件及前述第二電路構件任一者， 而將前述第一雷敗媸彼β 乂、+、动 ^ ^ 招㈣η 電路構件加以接合的工 一、、’並未特別限制’可因應目的而適宜選擇，但由獲 得前述絕緣性接著層之較適度的錢的觀點，以藉由加^ 押壓構件而加熱及押壓前述第二電路構件者為較佳。 就二述加熱押壓構件而言，例如，可舉例具有加熱機 構的押壓構件。就前述具有加熱機構的 如，可舉例加熱工具(一)等。 ° 就前述加熱之溫度而言，只要為前述導電性粒子含有 15 201221613 ==轉著層硬化的溫度即可，並未特別限制， 二&、適且選擇，但140°C〜200°C為較佳。 :引述押壓之壓力而言’並未特別限制 而適=擇，但（UMPa〜10MPa為較佳。口應目的 岸目加熱及押壓之時間而言，並未特別限制，可因 應目=而適宜選擇，例如，可舉例05秒鐘〜120秒鐘。 製造❹第⑶至第3 ®來呈現本發明之接合體之 : 例。第1圖為顯示本發明之異方性導電膜之 構件、:略σ,]面圖。第2圖為顯示配置工程中的第一電路 構件、第二電路構件、及異^路 略刘而园够， 〒电朕·^亂置之一例的概 面圖。。第3圖為顯示本發明之接合體之一例的概略剖 性導ί: Si圖所示’準備異方性導電膜1。前述異方 述導=4 電性粒子含有層2及絕緣性接著層3。前 置工程而^^ 2含有導電性粒子4。接著，就前述配 置耘而「如弟2圖所示，將第一電 構件9、及前述異方性導雷胺丨^ 弟一電路 以於於所獲得的前述接合體， ;别“電路構件5側配置前述絕緣性接著層3,前述 第二電路構件9側配置前述導電性粒子含有層2的方式， 述第一電路構件5、前述第二電路構件9、及前述显 L導電膜！。其中，前述第—f路構件5具有玻璃基板6、 古邑其緣膜7及配線材8。前述第二電路構件9為挽性基板，且 «醯亞胺薄膜H)及配線㈣。接著，就前述接合工㈣ 厂藉由加刪構件(圖未顯示)將前述第二電路構件9 16 201221613 * 加熱及押壓而將前述第一電路構件5及前述第二電路構件 - 9接合，前述第一電路構件5之前述配線材8、及前述第二 電路構件9之前述配線材11，係間隔前述異方性導電膜1 之硬化物（異方性導電層）中之前述導電性粒子4而被電 氣連接，獲得接合體（第3圖）。 [實施例] 以下，説明本發明之實施例，但本發明並未限定於此 等任一實施例。 (製造例1) <摻合物之調製> 使用以下之表1所示摻合之摻合物，實施各實施例、 比較例。 [表1] 摻合物1 摻合物2 摻合物3 摻合物4 摻合物5 摻合物6 摻合物7 摻合物8 UR-1350 60 60 54 46 39 33 - - UR-8200 - - - - - - 40 40 IRR214 24 10 10 8 2 1 5 - U-340A 10 24 30 40 53 60 49 39 EB-600 - - - - - - - 15 P-1M 1 1 1 1 1 1 1 1 KBM-503 1 1 1 1 1 1 1 1 PERHEXA C 4 4 4 4 4 4 4 4 合計 100 100 100 100 100 100 100 100 儲存彈性模數 (MPa) 2000 1600 1500 1000 500 400 1000 1000 表1中摻合之數値之單位為「質量份」。表1中之各成 分如下。又，表1記載之UR-1350及UR-8200之摻合量為 固體含量之摻合量。 UR-1350:聚酯胺基曱酸酯樹脂，東洋紡績公司製，以 甲基乙基酮/曱苯= 65/35 (質量比）之混合溶媒溶解為33 17 201221613 質量％者。 UR-8200 :聚酯胺基甲酸酯樹脂，東洋紡績公司製，以 甲基乙基酮/曱本__ 50/50 (質量比）之混合溶液溶解為33 質量％者， IRR214 .自由基聚合性化合物，DAICEL-CYTEC公司 製 U-340A :自由基聚合性化合物，新中村化學工業公司 製 EB_600 ·自由基聚合性化合物，DAICEL-CYTEC公司 製 P-1M :含有碟酸基之丙烯酸酯（自由基聚合性化合 物），共榮社化學公司製 KBM-503 .石夕烧偶合劑，信越化學工業公司製 PERHEXA C :聚合引發劑，曰油公司製 <儲存彈性模數之測量> 於經剝離處理的PET i，以乾燥後之平均厚度成為 20μιη的方式塗布上述摻合物，置入2〇〇艺之加熱爐中，加 熱30分鐘使前述摻合物硬化。將硬化的摻合物(硬化物）自 經前述剝離處理的PET剝離，切成3 5醜複4腿之長條 狀，作為測量試料。 此測量試料之3(TC的儲存彈性模數使用動態黏彈性測 量器（DmM)1FP，0RIENTEC公司製，頻率·，升溫 速度3°C/分鐘）來測量。結果顯示於表工。 (實施例1) 201221613 <異方性導電膜之製作> 於摻合物1，使導電性粒子（AUL704，積水化學工業 公司製）分散成為粒子密度為10,000個/mm2。將分散後之 摻合物塗布於經剝離處理的PET上使成為乾燥後之平均厚 度為19 μπι，形成導電性粒子含有層。 將摻合物3塗布於經剝離處理的PET上使乾燥後之平 均厚度成為1 μιη，而形成絕緣性接著層。 使所獲得的導電性粒子含有層及絕緣性接著層貼合， 而製作異方性導電膜。 <評價> •連接電阻（導通電阻）之評價- 就評價電路構件而言，使用COF (Sony Chemical & Information Device股份有限公司製之評價用電路構件、 S’perflex基材、50μιη間隔之厚度8μιη的Cu/厚度38μπι的 鍵Sn的圖案）及ιζο塗布玻璃（s〇ny chemical & Information Device股份有限公司製之評價用電路構件，全 部表面塗布IZO的厚度〇.7mm之玻璃）。 將異方性導電膜切成1.5mm寬，使前述異方性導電膜 之絕緣性接著層與前述IZ〇塗布玻璃接著的方式，將前述 IZO塗布玻璃貼附。於前述異方性導電膜之導電性粒子含 有層上，配置前述COF後，以1.5mm寬下使用加熱工具， 間隔作為緩衝材之厚度1〇〇μιη的Tefl〇n (註冊商標），於接 合條件19G°C、3_a、5秒鐘，將前述C〇F加熱及押廢， 進行接合而獲得接合體。 201221613 於製作的接合體，使用數位萬用表（digital multi-meter 7 5 5 5 ’横河電機公司製）’以4端子法電流1 m A，測量初期 之連接電阻（導通電阻）、及於溫度85°C及濕度85%RH之 條件之下保管500小時後之連接電阻（導通電阻）。結果顯 示於表2-1。 -接著強度之評價- 就5平價電路構件而言’使用c〇F (Sony Chemical & Information Device股份有限公司製之評價用電路構件、 S’perflex基材、50μιη間隔之厚度8μπι之Cu/厚度38μπι之 鍵Sn的圖案）及氮化矽塗布玻璃（s〇ny chemicai & Information Device股份有限公司製之評價用電路構件，於 全部表面塗布氮化矽的厚度〇.7min之玻璃）。 將異方性導電膜切成1.5mm寬，使前述異方性導電膜 之絕緣性接著層與前述氮化矽塗布玻璃接著的方式，將前 述氮化石夕塗布玻璃貼附。於前述異方性導電膜之導電性粒 子含有層上，配置前述C0F後，以15mm寬下使用加熱工 具，間隔作為緩衝材之厚度100μπι的Tefl〇n (註冊商標）， 於接合條件190°C、3MPa、5秒鐘，將前述c〇F加熱及押 壓，進行接合而獲得接合體。 於3?·作的接合體，使用拉伸試驗機（tensiie testing machine) (RTCi2(n，A&D公司製），以測量速度 50mm/ 秒’將C O F吊起來測量初期之接著強度、及測量於溫度8 5。〇 及濕度85%RH之條件下保管500小時後之接著強度。結 果顯示於表2-1。 20 201221613 (實施例2) <異方性導電膜之製作> 於摻合物1，使導電性粒子（AUL704，積水化學工業 公司製）分散成為粒子也、度為10,000個/mm2。將分散後之 摻合物塗布於經剝離處理的PET上使成為乾燥後之平均厚 度為17μπι，形成導電性粒子含有層。 將摻合物4塗布於經剝離處理的pet上使乾燥後之平 均厚度成為3 μιη，而形成絕緣性接著層。 使所獲得的導電性粒子含有層及絕緣性接著層貼合， 而製作異方性導電膜。 於所獲得的異方性導電膜，進行與實施例1相同之評 價。結果顯示於表2-1。 (實施例3) <異方性導電膜之製作> 於摻合物1 ’使導電性粒子（AUL704，積水化學工業 公司製）分散成為粒子密度為10,000個/mm2。將分散後之 摻合物塗布於經剝離處理的PET上使成為乾燥後之平均厚 度為19μιη，形成導電性粒子含有層。 將摻合物4塗布於經剝離處理的ΡΕΤ上使乾燥後之平 均厚度成為Ιμιη，而形成絕緣性接著層。 使所獲得的導電性粒子含有層及絕緣性接著層貼合， 而製作異方性導電膜。 於所獲得的異方性導電膜，進行與實施例丨相同之評 價。結果顯示於表2-1。 21 201221613 (實施例4) <異方性導電膜之製作> 於摻合物1，使導電性粒子（AUL704 ,積水化學工業 公司製）分散成為粒子密度為10,000個/mm2。將分散後之 摻合物塗布於經剝離處理的PET上使成為乾燥後之平均厚 度為19.5μιη，形成導電性粒子含有層。 將摻合物4塗布於經剝離處理的ρΕτ上使乾燥後之平 均厚度成為〇.5μιη，形成絕緣性接著層。 使所獲得的導電性粒子含有層及絕緣性接著層貼合， 而製作異方性導電膜。 於所獲得的異方性導電膜，進行與實施例丨相同之評 價。結果顯示於表2-1。 (實施例5) <異方性導電膜之製作> 於摻合物1，使導電性粒子（AUL7〇4，積水化學工業 A司製）为散成為粒子密度為1〇,〇〇〇個/mm2。將分散後之 摻合物塗布於經剝離處理的PET上使成為乾燥後之平均厚 度為19μιη，形成導電性粒子含有層。 將摻合物5塗布於經剝離處理的ρΕΤ上使乾燥後之平 均厚度成為1 μιη，形成絕緣性接著層。 使所獲得的導電性粒子含有層及絕緣性接著層貼合， 而製作異方性導電膜。 於所獲得的異方性導電膜，進行與實施例丨相同之評 價。結果顯示於表2-1。 22 201221613 (實施例6) <異方性導電膜之製作> 於摻合物3，使導電性粒子（AUL704，積水化學工業 么司製）分散成為粒子密度為1 〇,〇〇〇個/mm2。將分散後之 摻合物塗布於經剝離處理的PET上使成為乾燥後之平均厚 度為19μιη，形成導電性粒子含有層。 將摻合物4塗布於經剝離處理的pet上使乾燥後之平 均厚度成為1 μιη，形成絕緣性接著層。 使所獲得的導電性粒子含有層及絕緣性接著層貼合， 而製作異方性導電膜。 於所獲得的異方性導電膜，進行與實施例丨相同之評 價。結果顯示於表2-1。 (實施例7) <異方性導電膜之製作> 於摻合物1，使導電性粒子（AUL704，積水化學工業 _製）刀政成為粒子街度為個/mm2。將分散後之 換合物塗布祕祕處理的PET上使成為乾燥後之平均厚 度為19μιη，形成導電性粒子含有層。 一將摻合物7塗布於經剝離處理的ΡΕΤ上使乾燥後之平 均厚度成為1μιη，形成絕緣性接著層。 使所獲得的導電性粒子含有層及絕緣性接貼 而I作異方性導電膜。 於所獲得的異方性導電膜’騎與實_ 價。結果顯示於表2d。 23 201221613 (實施例8) 〈異方性導電膜之製作> 於摻合物1，使導電性粒子（AUL704 ,積水化學工業 公司製）勿政成為粒子密度為1 〇,〇〇〇個/mrn2。將分散後之 摻合物塗布於經剝離處理的PET上使成為乾燥後之平均厚 度為19μιη ’形成導電性粒子含有層。 將掺合物8塗布於經剝離處理的pet上使乾燥後之平 均厚度成為Ιμιη，形成絕緣性接著層。 使所獲得的導電性粒子含有層及絕緣性接著層貼合， 而製作異方性導電膜。 於所獲得的異方性導電膜，進行與實施例1相同之評 價。結果顯示於表2-1。 (比較例1 ) <異方性導電膜之製作> 於摻合物1，使導電性粒子（AUL704，積水化學工業 公司製）分散成為粒子密度為1〇,〇〇〇個/mm2。將分散後之 摻合物塗布於經剝離處理的PET上使成為乾燥後之平均厚 度為20μιη，製作異方性導電膜。 於所獲得的異方性導電膜，進行與實施例1相同之評 價。結果顯示於表2-2。 (比較例2) <異方性導電膜之製作> 於摻合物4，使導電性粒子（AUL704，積水化學工業 公司製）分散成為粒子密度為10,000個/mm2。將分散後之 24 201221613 掺合物金布於㈣彳離處理的pET上使成為乾燥後之平均厚 度為20μιη，製作異方性導電膜。 於所獲得的異方性導電膜'，進行與實施例i 相同之評 價。結果顯示於表。 (比較例3 ) <異方性導電犋之製作> 於摻合物1使導電性粒子（AUL704 ’積水化學工業 公司製）分散成為板子密度為1〇，_個/咖2。將分散後之 摻合物塗布於經_處理的贿上使成為乾燥後之平均厚 度為19叫，形成導電性粒子含有層。 將摻合物2塗布於 呷於經剝離處理的PET上使乾燥後之平 均厚度成為形錢緣性接著層。 使所獲得的導電性#工人士 p 电改粒子含有層及絕緣性接著層貼合， 而製作異方性導電膜。 進行與實施例1相同之評 於所獲得的異方性導電膜 價。結果顯示於表2-2。 (比較例4) <異方性導電臈之製作>The VlSC〇elasticity) measuring device (DDV-01FP, manufactured by ORIENTEC, frequency 11 Hz, heating rate 3 ΐ/min) was measured. The method of setting the storage elastic modulus of the cured product of the insulating layer after the insulating layer is 500 MPa to 1, 500 MPa is not particularly limited, and may be appropriately selected depending on the purpose, for example, by way of example When the insulating adhesive layer is formed, the raw material is appropriately adjusted (for example, the above-mentioned film-forming resin, 13 201221613 2: a method of initiating polymerization by a base polymerizable compound, and the above-mentioned polymerization is appropriately adjusted. By adding the aforementioned radical polymerization ===elasticity, the storage elastic modulus can be increased. The blending of the joints, the joint system of the present invention is at least a right flute member, an anisotropic conductive layer; The == part, the second circuit is the aforementioned first-circuit member, and: other components. Blood, 丨t thousand and the second circuit configuration, and the description of the anisotropic conductive film of the present invention is exemplified. The first circuit member and the first one of the above-mentioned one-way stalks are the same as the second circuit member. The anisotropic conductive layer is formed by the present invention. The anisotropic conductive layer Intersystem Between the first conductive film and the second circuit member, the other circuit member and the second circuit member are electrically connected. In the circuit member and the first bonding body, the front H and the potential are In the insulating film of the conductive film, the front side of the anisotropic conductive film is disposed on the side of the insulating member, and the bonded body is formed by the insulating contact. In order to flow moderately and with good adhesion, in the above-mentioned joined body, the arrow circuit member is formed in a sturdy manner, and the _=_ property (10) is wider than the first (the manufacturing method of the bonded body). The method includes at least the aging process and the joint 14 201221613. The project contains other works as necessary. The body of the joined body according to the present invention is manufactured. The foregoing joint of the present invention <Configuration Engineering> In the first circuit structure assembly, the second circuit structure is disposed on the second conductive structure film, and is disposed on the second circuit member side. ::Niu=Setting the above The insulating layer is not particularly limited, and may be used for the purpose of: the electro-particle-containing layer contains the ruthenium of the conductive particles, and the singular-circuit 槿 Duiyi describes the insulating back layer, the first circuit member, and the foregoing The second circuit member shape may be exemplified as the one described in the above-mentioned conductive film. In the description of the anisotropic conductive film, <joining engineering> And δ ' is added by heating the pressing member, and immediately flies the first circuit member and the second circuit member, and the first ray is defeated by β 乂, +, and moving ^ (4) η The joining of the circuit components, 'not particularly limited' may be appropriately selected depending on the purpose, but from the viewpoint of obtaining a relatively appropriate amount of money of the insulating backing layer, heating and holding by pressing the pressing member It is preferred that the second circuit member is pressed. As for the heating pressing member, for example, a pressing member having a heating mechanism can be exemplified. As the foregoing heating means, for example, a heating means (a) or the like can be exemplified. ° The temperature of the heating is not particularly limited as long as the conductive particles contain 15 201221613 == the temperature at which the layer is cured, and the second and the second are suitable, but 140 ° C to 200 ° C. It is better. : In terms of the pressure of the pressure, there is no particular restriction and it is appropriate, but (UMPa~10MPa is preferred. The time for the purpose of heating and pressing the mouth should not be particularly limited, depending on the target = For example, it may be exemplified by the following steps: (3) to (3) to produce the joined body of the present invention: Fig. 1 is a view showing the member of the anisotropic conductive film of the present invention. Fig. 2 is a schematic view showing an example of the first circuit component, the second circuit component, and the singularity of the singularity of the first circuit component, the second circuit component, and the singularity. Fig. 3 is a schematic cross-sectional view showing an example of the bonded body of the present invention: "Preparation of the anisotropic conductive film 1 in the Si diagram. The above-described heterogeneous description = 4 Electrical particle-containing layer 2 and insulating properties Layer 3. The pre-engineering process ^^ 2 contains the conductive particles 4. Then, as described above, "the first electrical component 9, and the aforementioned anisotropic guideramine 丨The circuit is used to obtain the aforementioned bonded body, and the "insulator-attached layer 3 is disposed on the side of the circuit member 5, and the second circuit structure is The first circuit member 5, the second circuit member 9, and the L-conductive film are disposed on the side of the first conductive member-containing layer 2, wherein the first-f member 5 has a glass substrate 6 and an ancient The rim film 7 and the wiring member 8. The second circuit member 9 is a structuring substrate, and the yttrium imide film H and the wiring (four). Next, the first circuit member 5 and the second circuit member -9 are joined by the second bonding member 9 16 201221613* by heating and pressing the second circuit member 9 16 201221613 by the bonding tool (4). The wiring member 8 of the first circuit member 5 and the wiring member 11 of the second circuit member 9 are spaced apart from the conductive particles in the cured product (artificial conductive layer) of the anisotropic conductive film 1 4 is electrically connected to obtain a joined body (Fig. 3). [Examples] Hereinafter, examples of the invention will be described, but the invention is not limited to any of the examples. (Production Example 1) <Preparation of Blend> Each of the examples and the comparative examples was carried out using the blend blended as shown in Table 1 below. [Table 1] Blend 1 Blend 2 Blend 3 Blend 4 Blend 5 Blend 6 Blend 7 Blend 8 UR-1350 60 60 54 46 39 33 - - UR-8200 - - - - - - 40 40 IRR214 24 10 10 8 2 1 5 - U-340A 10 24 30 40 53 60 49 39 EB-600 - - - - - - - 15 P-1M 1 1 1 1 1 1 1 1 KBM-503 1 1 1 1 1 1 1 1 PERHEXA C 4 4 4 4 4 4 4 4 Total 100 100 100 100 100 100 100 100 Storage elastic modulus (MPa) 2000 1600 1500 1000 500 400 1000 1000 Blend in Table 1 The unit of the number is "mass parts". The components in Table 1 are as follows. Further, the blending amount of UR-1350 and UR-8200 shown in Table 1 is the blending amount of the solid content. UR-1350: Polyester urethane resin, manufactured by Toyobo Co., Ltd., dissolved in a mixed solvent of methyl ethyl ketone / benzene = 65/35 (mass ratio) to 33 17 201221613% by mass. UR-8200: Polyurethane urethane resin, manufactured by Toyobo Co., Ltd., dissolved in a mixed solution of methyl ethyl ketone / hydrazine __ 50/50 (mass ratio) to 33% by mass, IRR214. Polymeric compound, U-340A, manufactured by DAICEL-CYTEC Co., Ltd.: EB_600, manufactured by Shin-Nakamura Chemical Co., Ltd. · Radical polymerizable compound, P-1M manufactured by DAICEL-CYTEC Co., Ltd.: Acrylate containing a disc acid group ( Free Radical Polymeric Compound), KBM-503, manufactured by Kyoeisha Chemical Co., Ltd.. Shih-Hoh coupling agent, PERHEXA C manufactured by Shin-Etsu Chemical Co., Ltd.: polymerization initiator, manufactured by Oyster Sauce Co., Ltd. <Measurement of storage elastic modulus> The peeled PET i was applied to the above-mentioned blend so that the average thickness after drying became 20 μm, and placed in a heating furnace of 2 liters, and the mixture was cured by heating for 30 minutes. The hardened blend (hardened product) was peeled off from the PET subjected to the above-mentioned peeling treatment, and cut into 3 strips of ugly 4 legs to prepare a measurement sample. This measurement sample 3 (the storage elastic modulus of TC was measured using a dynamic viscoelasticity measuring device (DmM) 1FP, manufactured by 0RIENTEC, frequency, and a heating rate of 3 ° C / min). The results are shown in the table. (Example 1) 201221613 <Preparation of anisotropic conductive film> In the blend 1, conductive particles (AUL704, manufactured by Sekisui Chemical Co., Ltd.) were dispersed to have a particle density of 10,000 particles/mm2. The dispersed blend was applied onto the peel-treated PET so that the average thickness after drying was 19 μm to form a conductive particle-containing layer. The blend 3 was applied onto the release-treated PET so that the average thickness after drying was 1 μm to form an insulating back layer. The obtained conductive particle-containing layer and the insulating adhesive layer were bonded together to form an anisotropic conductive film. <Evaluation> • Evaluation of connection resistance (on-resistance) - COF (evaluation circuit member manufactured by Sony Chemical & Information Device Co., Ltd., S'perflex substrate, 50 μm interval) was used for the evaluation circuit member. A pattern of a thickness of 8 μm of Cu/a thickness of 38 μm of a bond Sn and an ITO coating glass (a circuit member for evaluation of a device made by Information Device Co., Ltd., all of which were coated with a glass having a thickness of IZO of 77 mm). The IZO coated glass was attached by cutting the anisotropic conductive film to a width of 1.5 mm and adhering the insulating backing layer of the anisotropic conductive film to the IZ〇 coated glass. After the COF was placed on the conductive particle-containing layer of the anisotropic conductive film, a heating tool was used at a width of 1.5 mm, and Tefl〇n (registered trademark) having a thickness of 1 μm as a buffer material was interposed at the bonding. Under the conditions of 19 G ° C, 3_a, and 5 seconds, the aforementioned C〇F was heated and depleted, and joined to obtain a joined body. 201221613 The joint body produced by the digital multimeter (manufactured by Yokogawa Electric Co., Ltd.) was used to measure the initial connection resistance (on-resistance) and temperature 85 using a 4-terminal current of 1 m A. The connection resistance (on-resistance) after 500 hours of storage under conditions of °C and humidity of 85% RH. The results are shown in Table 2-1. - Evaluation of strength - For the case of 5 parity circuit members, 'use c〇F (Sony Chemical & Information Device Co., Ltd. evaluation circuit member, S'perflex substrate, 50 μm interval thickness of 8 μm Cu/thickness) A pattern of a bond of 38 μm bond Sn and a tantalum nitride coated glass (a circuit member for evaluation by Sigma®, Inc., Information Device Co., Ltd., having a thickness of 矽7 min on all surfaces). The anisotropic conductive film was cut into a width of 1.5 mm, and the insulating nitride layer of the anisotropic conductive film was adhered to the tantalum nitride coated glass to adhere the above-mentioned nitride coated glass. After the COF was placed on the conductive particle-containing layer of the anisotropic conductive film, a heating tool was used at a width of 15 mm, and Tefl〇n (registered trademark) having a thickness of 100 μm was used as a buffer material, and the bonding condition was 190 ° C. At 3 MPa for 5 seconds, the c〇F was heated and pressed, and joined to obtain a joined body. For the joint body made of 3?, using a tensile tester (RTCi2 (n, manufactured by A&D), the COF is suspended at a measurement speed of 50 mm/sec. The adhesive strength after storage for 500 hours under the conditions of a temperature of 85 ° and a humidity of 85% RH. The results are shown in Table 2-1. 20 201221613 (Example 2) <Production of anisotropic conductive film> In the first embodiment, the conductive particles (AUL704, manufactured by Sekisui Chemical Co., Ltd.) were dispersed into particles, and the degree was 10,000 particles/mm2. The dispersed blend was applied to the peeled PET to make the average after drying. The conductive particle-containing layer was formed by applying a thickness of 17 μm to the conductive particle-containing layer. The blend 4 was applied to the peel-treated pet so that the average thickness after drying was 3 μm to form an insulating adhesive layer. An anisotropic conductive film was formed by laminating an insulating adhesive layer. The same evaluation as in Example 1 was carried out on the obtained anisotropic conductive film. The results are shown in Table 2-1. (Example 3) <Example 3) Production of anisotropic conductive film> The compound 1' was dispersed in a conductive particle (AUL704, manufactured by Sekisui Chemical Co., Ltd.) to have a particle density of 10,000/mm2. The dispersed blend was applied to the peeled PET so that the average thickness after drying was 19 μπη, a conductive particle-containing layer was formed. The blend 4 was applied onto a release-treated crucible so that the average thickness after drying became Ιμηη, and an insulating adhesive layer was formed. The obtained conductive particle-containing layer and insulation were obtained. Subsequently, the layers were bonded to each other to form an anisotropic conductive film. The same evaluation as in Example 于 was performed on the obtained anisotropic conductive film. The results are shown in Table 2-1. 21 201221613 (Example 4) < Production of a square conductive film> In the blend 1, conductive particles (AUL704, manufactured by Sekisui Chemical Co., Ltd.) were dispersed to have a particle density of 10,000 particles/mm2. The dispersed blend was applied to a release-treated product. The average thickness of the PET after drying was 19.5 μm to form a conductive particle-containing layer. The blend 4 was applied to the peel-treated ρΕτ to make the average thickness after drying to 〇.5 μιη. An insulating adhesive layer was formed. The obtained conductive particle-containing layer and an insulating adhesive layer were bonded together to form an anisotropic conductive film. The obtained anisotropic conductive film was evaluated in the same manner as in Example 。. The results are shown in Table 2-1. (Example 5) <Production of anisotropic conductive film> In the blend 1, the conductive particles (AUL7〇4, manufactured by Sekisui Chemical Industry Co., Ltd.) were dispersed into particles. The density is 1 〇, 〇〇〇 / mm2. The thus-dispersed blend was applied onto the peel-treated PET so that the average thickness after drying was 19 μm to form a conductive particle-containing layer. The blend 5 was applied onto the peel-treated ρ 使 so that the average thickness after drying was 1 μm to form an insulating back layer. The obtained conductive particle-containing layer and the insulating adhesive layer were bonded together to form an anisotropic conductive film. The same evaluation as in Example 进行 was carried out on the obtained anisotropic conductive film. The results are shown in Table 2-1. 22 201221613 (Example 6) <Preparation of anisotropic conductive film> In the blend 3, conductive particles (AUL704, manufactured by Sekisui Chemical Co., Ltd.) were dispersed to have a particle density of 1 〇, 〇〇〇 /mm2. The thus-dispersed blend was applied onto the peel-treated PET so that the average thickness after drying was 19 μm to form a conductive particle-containing layer. The blend 4 was applied onto the peel-treated pet so that the average thickness after drying was 1 μm to form an insulating back layer. The obtained conductive particle-containing layer and the insulating adhesive layer were bonded together to form an anisotropic conductive film. The same evaluation as in Example 进行 was carried out on the obtained anisotropic conductive film. The results are shown in Table 2-1. (Example 7) <Preparation of anisotropic conductive film> In the blend 1, the conductive particles (AUL704, manufactured by Sekisui Chemical Co., Ltd.) were made into a particle street degree of /mm2. The dispersed compound was coated on the secret PET and the average thickness after drying was 19 μm to form a conductive particle-containing layer. The blend 7 was applied to the release-treated crucible so that the average thickness after drying was 1 μm to form an insulating back layer. The obtained conductive particle-containing layer and the insulating layer were attached, and I was an anisotropic conductive film. The anisotropic conductive film obtained is 'riding and real price. The results are shown in Table 2d. 23 201221613 (Example 8) <Preparation of anisotropic conductive film> In the blend 1, the conductive particles (AUL704, manufactured by Sekisui Chemical Co., Ltd.) were made to have a particle density of 1 〇, 〇〇〇 / Mrn2. The dispersed blend was applied onto the release-treated PET to have an average thickness of 19 μm after drying to form a conductive particle-containing layer. The blend 8 was applied to the peel-treated pet so that the average thickness after drying became Ιμηη, and an insulating adhesive layer was formed. The obtained conductive particle-containing layer and the insulating adhesive layer were bonded together to form an anisotropic conductive film. The same evaluation as in Example 1 was carried out on the obtained anisotropic conductive film. The results are shown in Table 2-1. (Comparative Example 1) <Preparation of anisotropic conductive film> In the blend 1, conductive particles (AUL704, manufactured by Sekisui Chemical Co., Ltd.) were dispersed to have a particle density of 1 〇, 〇〇〇/mm2. The dispersed blend was applied onto the peel-treated PET so that the average thickness after drying was 20 μm, and an anisotropic conductive film was produced. The same evaluation as in Example 1 was carried out on the obtained anisotropic conductive film. The results are shown in Table 2-2. (Comparative Example 2) <Preparation of anisotropic conductive film> In the blend 4, conductive particles (AUL704, manufactured by Sekisui Chemical Co., Ltd.) were dispersed to have a particle density of 10,000 particles/mm2. The disperse 24 201221613 blend gold cloth was placed on the (p) separated pET to have an average thickness of 20 μm after drying to prepare an anisotropic conductive film. The same evaluation as in Example i was carried out on the obtained anisotropic conductive film '. The results are shown in the table. (Comparative Example 3) <Production of anisotropic conductive iridium> In the blend 1, conductive particles (manufactured by AUL 704 'S. Ltd.) were dispersed to have a plate density of 1 Å, _ per coffee 2 . The dispersed blend was applied to the treated bribe so that the average thickness after drying was 19, and a conductive particle-containing layer was formed. Blend 2 was applied to the stripped PET to make the average thickness after drying a marginal layer. The obtained conductive material #worker p electrically modified particle-containing layer and an insulating adhesive layer were bonded together to form an anisotropic conductive film. The anisotropic conductive film obtained was evaluated in the same manner as in Example 1. The results are shown in Table 2-2. (Comparative Example 4) <Production of anisotropic conductive iridium>
於換合物1，使導電性粒子UUL704，積水化學工業 公司製）分散成為粒子密度為1〇,〇〇〇個W。將分散後之 摻合物塗布於經剝離處理的P Μ u 1 wΡΕΤ上使成為乾燥後之平均厚 度為14μηι，形成導電性粒子含有層。 將摻合物4塗布於經剝離 刺離處理的ΡΕΤ上使乾燥後之平 均厚度成為6μιη，形成絕緣性接著層。 25 201221613 使所獲得的導電性粒子含有層及絕緣性接著層貼合， 而製作異方性導電膜。 曰 價 於所獲得的異方性導電膜，進行與實施例i相同之評 結果顯示於表2-2。 (比較例5) <異方性導電膜之製作> 於摻合物1，使導電性粒子（AUL7〇4，積水化學工業 公司製）分散成為粒子密度為1〇,〇〇〇個/mm2。將分散後之 摻合物塗布於_離處理的PET上使絲賊後之平均厚 度為16μιη，形成導電性粒子含有層。 :曰將摻合#Μ塗布於經剝離處理的ρΕΤ上使乾燥後之平 均厚度成為4μιη，形成絕緣性接著層。 使所獲得的導電性粒子含有層及絕緣性接著層貼合， 而製作異方性導電膜。 價 於所獲得的異方性導電膜，進行與實施例！相同之評 結果顯示於表2_2。 (比較例6) <異方性導電膜之製作〉 公司势）二，1，使導電性粒子（AUL7〇4，積水化學工業 換散成為粒子密度為1G，GGG個/mm2。將分散後之 =^以_離處㈣PET上使成域㈣之平均厚 …：.μΐϊ1，形成導電性粒子含有層。 均厚产#反物4塗布於經剝離處理的ΡΕΤ上使乾燥後之平 又’’、、〇.1μηι，形成絕緣性接著層。 26 .201221613 使所獲得的導電性粒子含有層及絕緣性接著層貼合， 而製作異方性導電臈。 於所獲得的異方性導電膜，進行與實施例丨相同之評 彳貝。結果顯示於表2·2。 (比較例7) <異方性導電膜之製作> 於摻合物1，使導電性粒子（AUL704，積水化學工業 公司製）分散成為粒子密度為1〇,〇〇〇個/mm2。將分散後之 摻合物塗布於經剝離處理的PET上使成為乾燥後之平均厚 度為19μιη，形成導電性粒子含有層。 將摻合物6塗布於經剝離處理的ρΕΤ上使乾燥後之平 均厚度成為1μιη，形成絕緣性接著層。 使所獲得的導電性粒子含有層及絕緣性接著層貼合， 而製作異方性導電膜。 於所獲得的異方性導電膜，進行與實施例1相同之評 價。結果顯示於表2_2。 [表 2-1] 實施例 1 2 3 4 5 6 7 8 各 向 薄異 骐性 導 電 導電性粒子 含有層 摻合物 1 1 1 1 1 3 1 平均厚度（um) 19 17 19 19.5 19 19 19 19 絕緣性 接著層 捧合物 3 4 4 4 5 4 7 8 ±沒厚度（μπί) 1 3 1 0.5 1 1 1 1 爾存彈性模數 1500 1000 1000 1000 500 1000 1000 1000 等逋電阻 (Ω) 接著強度 (N/cm) 初期 2.2 2.3 2.2 3.0 2.4 2.3 2.2 2.3 500小時 3.7 4.8 3.9 3.5 4.5 4.5 4.0 4.3 初期 7.0 8.1 8.3 7.9 8.2 8.2 8.1 8.0 500小時 5.1 6.8 6.5 5.8 6.6 6.6 6.4 6.5 27 201221613 [表 2-2] -----比較例 1 2 3 4 5 6 7 向 各 薄異 膜性 導 電 J8 導電性粒子 含有層 擦合物 1 4 1 1 1 1 1 予均厚度（μΐη ) 20 20 19 14 16 19.9 19 絶緣性 接著層 带 RB 捧合物 - * 2 4 4 4 6 _平均厚度Um) - - 1 6 4 0·1 1 儲存彈性模數 JMP a、 初期 "ΓΓ· ]·5 — 1600 2.2 1000 _ 3.5 1000 1000 400 (ω3 2.7 2.0 2.9 500小時 3.0 41.1 3.5 11.2 7.7 3.3 6 0 接著強度 (N/c m) 初期 — 5.6 9.5 6.5 8.5 8.1 6.4 8.0 500小時 0.5 8.0 4.3 7.2 7.2 4.0 6.8 由表2 1〜表2-2之結果，實施例1〜8之絕緣性接著層 的平均厚度為〇.5μιη〜3μιη ’且魏雜接著層硬化後之硬 化物之3〇C中的儲存彈性模數A 500MPa〜l,500MPa的本 發明之異方性導電膜，有可能於低溫短時間壓著，導通電 阻於初期及8(TC、85%RH下保管則小時後為良好，且 接著強度於初期及80t:、85%RH下保管5〇〇小時後為 好。 ’、又 另一方面，不具有絕緣性接著層的比較例丨之異方性 導電膜，保管5GG小時後之接著強度為〇麗m的低值。 不^有、、轉1±接著層的比較例2之異方性導電膜係導通電 阻南’尤其保# 5〇〇小時後之導通電阻為Mm的高值。 使絕緣性接著層硬化後之硬化物之3叱中的儲存彈性模數 為1，6⑻MPa的比較例3之異方性導電膜，前述儲存彈性模 數為面，且保管50(M、時後之接著強度成為伽/⑽的低 値：絕緣性接著層之平均厚度為一的比較例4之各向里 性導電性軸、及絕緣性接著層之平均厚度為4师的比較 28 201221613 例5之各向異性導電性薄膜係絕緣性接著層之平均厚度 厚的，且保管500小時後之導通電阻各別成為η·2Ω二及 7.7Ω的高値。絕緣性接著層之平均厚度為Q如的比較例 6之各向異性導電性薄膜係絕緣性接著層之平均厚度為薄 的’且保管5GG小時後之接著強度為4鳥m的低値。使 絕緣性接著層硬化後之硬化物之观中的儲存彈性模數為 4〇〇MPa的比較例7之異方性導電膜系係前述儲存彈性模數 為低’且500小時保管後之導通電阻成為6.0Ω的高値。 [產業上之利用可能性] 本發明之異方性導電膜其目於配χ絕緣膜的電路構件 ^連接有可能於低溫短時間壓著，導通電阻低且接著性優 適當地使用於ICW、液晶顯示器ααυ中的 .0 LCD面板）等之電路構件之電氣及機械性地連 【圖式簡單說明】 面圖第1圖為顯示本發明之異方性導電膜之-例的概略剖 構件第顯示配置工程中的第一電路構件、第二電路 牛、方性㈣膜之配置之一例的概略剖面圖。 3圖為顯示本發明之接合體之〜例的概略剖面圖。 【元件符遽說明】 異方性導電膜 29 201221613 2 導電性粒子含有層 3 絕緣性接著層 4 導電性粒子 5 第一電路構件 6 玻璃基板 7 絕緣膜 8 配線材 9 第二電路構件 10 聚醯亞胺薄膜 11 配線材 30In the compound 1, the conductive particles UUL704 (manufactured by Sekisui Chemical Co., Ltd.) were dispersed to have a particle density of 1 Å and WW. The dispersed blend was applied onto the peel-treated P Μ u 1 wΡΕΤ to have an average thickness of 14 μm after drying to form a conductive particle-containing layer. The blend 4 was applied onto a ruthenium which was peeled off, and the average thickness after drying was 6 μm to form an insulating back layer. 25 201221613 The obtained conductive particle-containing layer and the insulating adhesive layer are bonded together to form an anisotropic conductive film. The evaluation results similar to those in Example i were carried out on the obtained anisotropic conductive film, and the results are shown in Table 2-2. (Comparative Example 5) <Preparation of anisotropic conductive film> In the blend 1, the conductive particles (AUL7〇4, manufactured by Sekisui Chemical Co., Ltd.) were dispersed to have a particle density of 1 〇, 〇〇〇 / Mm2. The dispersed blend was applied to the treated PET so that the average thickness after the thief was 16 μm to form a conductive particle-containing layer. : 掺 The blending #Μ was applied to the peel-treated ρ 使 so that the average thickness after drying was 4 μm to form an insulating back layer. The obtained conductive particle-containing layer and the insulating adhesive layer were bonded together to form an anisotropic conductive film. The anisotropic conductive film obtained is carried out in the same manner as in the examples! The same evaluation results are shown in Table 2_2. (Comparative Example 6) <Production of anisotropic conductive film> Company's potential) 2, 1, conductive particles (AUL7〇4, water-storage chemical industry were dispersed to have a particle density of 1 G, GGG/mm2. = _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ And 〇.1μηι, forming an insulating adhesive layer. 26.201221613 The conductive particle-containing layer and the insulating adhesive layer obtained are bonded together to form an anisotropic conductive iridium. The evaluation was carried out in the same manner as in Example 。. The results are shown in Table 2-2. (Comparative Example 7) <Production of anisotropic conductive film> In the blend 1, conductive particles (AUL704, Sediment Chemistry) Industrial Co., Ltd. was dispersed to have a particle density of 1 〇, 〇〇〇 / mm 2. The dispersed blend was applied to the peeled PET so that the average thickness after drying was 19 μm to form a conductive particle-containing layer. Applying Blend 6 to the peeled ρΕΤ to dry The average thickness after drying is 1 μm, and an insulating adhesive layer is formed. The obtained conductive particle-containing layer and the insulating adhesive layer are bonded together to form an anisotropic conductive film. The obtained anisotropic conductive film is used. The same evaluation as in Example 1 was carried out. The results are shown in Table 2-2. [Table 2-1] Example 1 2 3 4 5 6 7 8 Each of the oppositely thin conductive conductive particles-containing layer blends 1 1 1 1 1 3 1 Average thickness (um) 19 17 19 19.5 19 19 19 19 Insulating adhesive layer 3 4 4 4 5 4 7 8 ± No thickness (μπί) 1 3 1 0.5 1 1 1 1 Elastic modulus 1500 1000 1000 1000 500 1000 1000 1000 Equal 逋 resistance (Ω) Next strength (N/cm) Initial 2.2 2.3 2.2 3.0 2.4 2.3 2.2 2.3 500 hours 3.7 4.8 3.9 3.5 4.5 4.5 4.0 4.3 Initial 7.0 8.1 8.3 7.9 8.2 8.2 8.1 8.0 500 hours 5.1 6.8 6.5 5.8 6.6 6.6 6.4 6.5 27 201221613 [Table 2-2] -----Comparative Example 1 2 3 4 5 6 7 To each thin film-conducting J8 conductive particle-containing layer-containing compound 1 4 1 1 1 1 1 pre-thickness (μΐη) 20 20 19 14 16 19.9 19 Insulating adhesive layer RB Object - * 2 4 4 4 6 _ average thickness Um) - - 1 6 4 0·1 1 Storage elastic modulus JMP a, initial "ΓΓ·]·5 — 1600 2.2 1000 _ 3.5 1000 1000 400 (ω3 2.7 2.0 2.9 500 hours 3.0 41.1 3.5 11.2 7.7 3.3 6 0 Next strength (N/cm) Initial - 5.6 9.5 6.5 8.5 8.1 6.4 8.0 500 hours 0.5 8.0 4.3 7.2 7.2 4.0 6.8 Results from Table 2 1 to Table 2-2, examples The average thickness of the insulating backing layer of 1 to 8 is 〇.5 μιη to 3 μιη ' and the storage elastic modulus of the cured product of the cured layer after the hardening of the layer is 500 MPa to 1, 500 MPa. The conductive film may be pressed at a low temperature for a short period of time, and the on-resistance is good at the initial stage and 8 (TC and 85% RH for a small amount of time, and then the strength is 5 〇〇 at the initial stage and 80 t:, 85% RH. After hours is better. On the other hand, in the comparative example of the anisotropic conductive film which does not have an insulating adhesive layer, the adhesive strength after storage for 5GG hours is a low value of the brilliant m. The anisotropic conductive film of Comparative Example 2, which does not have, and has a layer of 1±, is electrically conductive, and has a high on-resistance of Mm after 5 hours. The anisotropic conductive film of Comparative Example 3 in which the storage elastic modulus of the cured product after the insulating adhesive layer was cured was 1,6 (8) MPa, the storage elastic modulus was a surface, and the storage was 50 (M, after the time) The subsequent strength is a low 伽/(10): the average thickness of the insulating conductive layer is one, and the average thickness of the inward conductive axis and the insulating back layer is a comparison of four divisions. 28 201221613 Example 5 The anisotropic conductive film-based insulating adhesive layer has a thick average thickness, and the on-resistance after storage for 500 hours is η·2 Ω2 and 7.7 Ω, respectively. The average thickness of the insulating adhesive layer is Q. In the anisotropic conductive film of Comparative Example 6, the average thickness of the insulating adhesive layer was thin, and the adhesive strength after storage for 5 GG hours was as low as 4 birds. The cured cured layer was cured. In the anisotropic conductive film system of Comparative Example 7 in which the storage elastic modulus is 4 MPa, the storage elastic modulus is low and the on-resistance after storage for 500 hours is 6.0 Ω. [Industrial use] Possibility] The anisotropic conductive film of the present invention The circuit member for the insulating film is connected to a circuit member which may be pressed at a low temperature for a short period of time, has a low on-resistance, and is preferably used in an ICW or a liquid crystal display (α LCD). And the mechanical connection [Simplified description of the drawings] Fig. 1 is a view showing a first circuit member, a second circuit, and a square in the arrangement and arrangement of the schematic sectional member of the example of the anisotropic conductive film of the present invention. A schematic cross-sectional view showing an example of the arrangement of the (four) film. 3 is a schematic cross-sectional view showing an example of a joined body of the present invention. [Description of components] Anisotropic conductive film 29 201221613 2 Conductive particle-containing layer 3 Insulating adhesive layer 4 Conductive particle 5 First circuit member 6 Glass substrate 7 Insulating film 8 Wiring material 9 Second circuit member 10 Convergence Imine film 11 wiring material 30