TW201221606A - Adhesion film for connecting circuit and usage thereof, circuit connection structure and manufacturing method thereof, and connecting method of circuit member - Google Patents

Adhesion film for connecting circuit and usage thereof, circuit connection structure and manufacturing method thereof, and connecting method of circuit member Download PDF

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Publication number
TW201221606A
TW201221606A TW100120190A TW100120190A TW201221606A TW 201221606 A TW201221606 A TW 201221606A TW 100120190 A TW100120190 A TW 100120190A TW 100120190 A TW100120190 A TW 100120190A TW 201221606 A TW201221606 A TW 201221606A
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Taiwan
Prior art keywords
circuit
film
electrode
conductive
adhesive
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TW100120190A
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Chinese (zh)
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TWI452103B (en
Inventor
Satoru Mori
Kazuya Sato
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Hitachi Chemical Co Ltd
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Publication of TWI452103B publication Critical patent/TWI452103B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788Glasses, e.g. amorphous oxides, nitrides or fluorides

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Non-Insulated Conductors (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Combinations Of Printed Boards (AREA)
  • Wire Bonding (AREA)

Abstract

The present invention provides an adhesion film for connecting circuits. The adhesion film for connecting circuits includes: a conductive adhesive layer including an adhesive composition and conductive particles; and an insulative adhesive layer including an adhesive composition without conductive particles. The adhesive composition contained in the conductive adhesive layer includes (a) a film formation material of glass transition temperature at 40 DEG C -70 DEG C, (b) an Epoxy Resin, and (c) a latent curing agent.

Description

.11 .11201221606 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種電路連接用接著膜及其使用、電 路連接構造體及其製造方法以及電路構件的連接方法。 【先前技術】 先前,為了將半導體元件連接於基板,特別是液晶等 的平板顯示器(Flat Panel Display,FPD)用的玻璃(glass) 基板,使用因加熱而固化的熱固性的接著劑膜(film ) β 作為熱固性的接著劑膜’含有熱固性樹脂即環氧 (epoxy)樹脂的接著劑膜被廣泛使用,由於環氧樹脂因加 熱而固化之後,成為機械性強度高的聚合物,因此,藉由 上述接著劑膜來牢固地將半導體元件與液晶顯示器 (display)予以連接,可獲得可靠性高的電氣裝置。近年 來,含有能夠以比環氧樹脂更低的溫度來固化的丙稀酸酿 的接著劑膜亦逐步被使用。 然而’於使用接著劑膜來將玻璃基板與半導體元件予 以連接的情形下,當對接著劑膜進行加熱時,由於半導體 元件有時因熱傳導而被加熱之後發生熱膨脹,因此該半導 體元件會伸展。因此’於加熱結束之後,若整體冷卻,則 伸展的半導體元件會收縮,有時伴隨該收縮,構成FPD的 玻璃基板會發生翹曲等的變形。若玻璃基板發生變形,則 會導致位於已變形的部分的顯示器的顯示影像雜亂。 至今為止,為了抑制魅曲等的變形,各種方法已為人 所知。例如,已提出有使膜介於加熱及加壓工具(t〇〇1) 201221606 it,體凡件之間的連接方法(日本專利特開2006-229124 或於加熱及加壓步驟之後進行加熱 專利特開2004-200230號公報)。 =將可緩和應力的材料使用於接著劑膜的方 直^人所知(日本專利特開雇-277573號公報、日本 專利第3477367號公報)。 ’雖I藉由使用可緩和應力的材料來抑制玻璃基 、反形,但存在連接可靠性下降的問題。又,存在如下 即,形成接著劑膜時的成膜性下降,難以穩定地 獲付接者劑膜。再者,尤其存在如下的傾向,即,隨著玻 及半導體元件的厚度變薄,容易顯著地產生鍾曲(玻 璃基板的變形)。 【發明内容】 因此’本發明的目的在於提供如下的電路連接用接著 ^及其使用、使用有該電路連接用接著膜的電路連接構造 體及其製造方法錢電路構件的連接方法,上述電路】接 用接著膜即便當祕將厚纽先前的f路基 的玻璃基板與半導體元件予以連接時,亦可 接可靠性且可__基_變形,*且成雖亦優異。 本發明者等為了解決上述問題而進行了仔細研究,、妹 果發現:时裝之後(固化之後)的電路連接用接著膜的 内部應力過高,故而電路構件發生變形;而且因在安、 後的電路連接用接著膜中產生彈性率過低的部分,故^ 接可靠性下降。亦已知:尤其於彈性率局部地過低的情形 201221606 . 時,相對向的電極彼此難以使導 連接可靠財下降的傾‘ ㈣斜,因此, 基於上述發現而進一步進行研究,本發明者等發現. ㈣轉健度的成麟湘於電路連接用接 從而完ΐ 了^f。高連接可靠性,亦可抑制基材的變形, 亦即’本發明提供一種電料接用接著膜, =接㈣包括··含有接著齡成物及導餘子的導電性 性芦與ϋ接著劑組成物且不含有導電粒子的絕緣 ,接者’導電性接著繼中所含的接著劑組成物包含 U)玻璃轉移溫度為贼〜7(rc的成騎料、(b 樹脂及(C)潛伏性固化劑,上述電路連接用接著膜用於 使第1電路電極及第2電路電極相對向的狀態下,、將第 電路構件與第2電路構件予以電性連接,i中 路構件在厚度為0.3 mm以下的第,電路基=二 成有上述第1電路電極,上述第2電路構件在厚度為〇3 7以下㈣2電路基板的主面上形成有上述第2電路電 若為如上所述的電路連接用接著膜,則由於在導電性 接著劑層中的接著劑組成物中使用有具有規定的玻璃 溫度(以下稱為「Tg」)的(a)成膜材料,因此’即便使 膜固化之後,亦可將固化物内的内部應力控制為低内部應 力,且可使整個固化物具有均一且充分的彈性率。藉此了 即便當使用上述電路連接用接著膜來將包括厚度為〇 201221606 jooypif mm以:的電路基板的電路構件彼此予以連接時亦 制電路構件的變形,並且可獲得良好 由於/,;叫谢的接著劑組成物包二 Tg的U)成膜材料、及(b)環氧樹脂、 =此,不僅成膜性優異,而且可實現優異的财熱性及 再者由於電路連接用接著膜包括 Μ ==亥兩個層’因此相對向的電極二二 胃㈣可獲得良 ’導電性接著劑 絕緣性粒子。藉 對於本發明的電路連接用接著膜而言 層及/或絕緣性接著劑層亦可更含有(d) 此’可維持更優異的連接可靠性。 ^ ^ ^ 連接構造體,該電路連接構 仏體包括.第i電路構件,在厚度為〇3酿以下的第】 電路基板的主面上形成有第i電路電極;第2電路構件, 2ίί°.3Γ以下的第2電路基板的主面上形成有第2 ^路電極’且第2電路電極配置為與第1電路電極相對向, 第2電路電極與第丨電路電極電性連接;以及連接部,介 =第1電路構件與第2電路構件之間,連接部為本發明的 電路連接用接著膜的固化物。 若為如上所述的電路連接構造體,則由於連接部包含 本發明的電路連接祕著膜的固化物,因此,可將電路連 接構造體_内部應力㈣為低㈣應力,從而可抑制產 201221606 可抑制電路構件的變形,並 ㈣^且’本發明提供"'種電路連接構造體的製造方法, 接構频的製造方法包括如下的步驟:使上述本 if =接用接著臈介於一對電路構件之間而獲得積 二,上、二1對電路構件包括第1電路構件與第2電路構 4第1電路構件在厚度為G3賴以下的第丄電路 『上形成有第1電路電極,上述第2電路構件在 的第2電路基板的主面上形成有第2 而使電路雜用構件,以及對積層體進行加熱及加壓 r來形成連接部,上述連 電路電極與第2電路雷」^以使相對向地配置的第1 件彼此予以接著 紐連接的方式,將-對電路構 接構ΐί如述的製造方法,則可製造出如下的電路連 優;::=r抑制電路構件的變形二 件二該電路構 配置的狀態下,對第1電路構件極相對向地 於第1電路構件及第2電路構件之二^構件以及配置 :;===電路=:= 以下的第1電路基板的主面上形成路有=度電為::BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive film for circuit connection, a use thereof, a circuit connection structure, a method of manufacturing the same, and a method of connecting circuit members. [Prior Art] Conventionally, in order to connect a semiconductor element to a substrate, in particular, a glass substrate for a flat panel display (FPD) such as a liquid crystal, a thermosetting adhesive film (film) which is cured by heating is used. β is a thermosetting adhesive film. An adhesive film containing an epoxy resin, which is a thermosetting resin, is widely used. Since the epoxy resin is cured by heating, it becomes a polymer having high mechanical strength. The film is then firmly bonded to the liquid crystal display to obtain a highly reliable electrical device. In recent years, an adhesive film containing acrylic acid which can be cured at a lower temperature than epoxy resin has been gradually used. However, in the case where the glass substrate and the semiconductor element are previously connected by using an adhesive film, when the adhesive film is heated, since the semiconductor element is sometimes heated by heat conduction and then thermally expanded, the semiconductor element is stretched. Therefore, when the whole is cooled after the completion of the heating, the stretched semiconductor element shrinks, and the glass substrate constituting the FPD may be deformed by warpage or the like depending on the shrinkage. If the glass substrate is deformed, the display image of the display located in the deformed portion may be disordered. Various methods have been known so far in order to suppress deformation such as temperament. For example, it has been proposed to have a film interposed between a heating and pressing tool (t〇〇1) 201221606 it, a method of connecting between the parts (Japanese Patent Laid-Open No. 2006-229124 or a heating patent after the heating and pressing steps). JP-A-2004-200230). The material which can be used for the stress-relieving film is known in the art of the adhesive film (Japanese Patent Laid-Open No. Hei-277573, Japanese Patent No. 3477367). Although the glass base and the reverse shape are suppressed by using a material which can alleviate stress, there is a problem that the connection reliability is lowered. In addition, the film formability at the time of forming the adhesive film is lowered, and it is difficult to stably obtain the receiver film. Further, in particular, as the thickness of the glass and the semiconductor element is reduced, it is easy to produce a bell curve (deformation of the glass substrate) remarkably. In view of the above, it is an object of the present invention to provide a circuit connection structure for use in the following circuit connection, a circuit connection structure using the same, and a method of manufacturing the same, When the succeeding film is connected to a semiconductor element of a conventional f-base glass substrate, it is also reliable and can be deformed, and is excellent. The inventors of the present invention have conducted intensive studies to solve the above problems, and found that the internal stress of the film for connecting the film after the fashion (after curing) is too high, so that the circuit member is deformed; In the circuit connection, the portion where the modulus of elasticity is too low is generated in the adhesive film, so that the reliability is lowered. It is also known that, in particular, in the case where the elastic modulus is locally too low, the opposing electrodes are difficult to make the conduction connection reliable, and the inclination is lowered. Therefore, based on the above findings, the inventors have further studied. Found. (4) Cheng Linxiang of the degree of health is connected to the circuit connection and thus completes ^f. The high connection reliability can also suppress the deformation of the substrate, that is, the present invention provides an electrical material for the adhesive film, and the connection (4) includes the conductive reed and the crucible containing the ageing substance and the guide. The composition of the agent does not contain the insulation of the conductive particles, and the conductivity of the adhesive composition contained in the subsequent step includes U. The glass transition temperature is thief ~ 7 (r of the rc, (b resin and (C) In the latent film curing device, the first circuit electrode and the second circuit electrode are opposed to each other, and the first circuit member and the second circuit member are electrically connected to each other. In the case of 0.3 mm or less, the circuit base = 20% of the first circuit electrode, and the second circuit member has the thickness of 〇37 or less (4). The second circuit is formed on the main surface of the circuit board as described above. In the adhesive film for circuit connection, since the (a) film-forming material having a predetermined glass temperature (hereinafter referred to as "Tg") is used in the adhesive composition in the conductive adhesive layer, even if the film is cured After that, it can also be in the cured product. The internal stress is controlled to a low internal stress, and the entire cured product can have a uniform and sufficient elastic modulus. Thereby, a circuit including a circuit substrate having a thickness of 〇201221606 jooypif mm can be used even when the above-described circuit connecting adhesive film is used. When the members are connected to each other, the circuit member is also deformed, and a good adhesion due to /, an adhesive composition comprising two Tg U) film-forming materials, and (b) an epoxy resin, =, not only The film property is excellent, and excellent heat-generating property can be achieved. Further, since the adhesive film for circuit connection includes two layers of Μ == hai, the conductive electrode of the opposite electrode (four) can obtain good conductive adhesive insulating particles. The layer and/or the insulating adhesive layer may further contain (d) this can maintain more excellent connection reliability for the adhesive film for circuit connection of the present invention. ^ ^ ^ Connection structure, the circuit connection structure The body includes an i-th circuit member, and an i-th circuit electrode is formed on a main surface of a circuit board having a thickness of 〇3 or less; and a second circuit member is a main surface of the second circuit board of 2 ίί°. a second circuit electrode is formed and the second circuit electrode is disposed to face the first circuit electrode, the second circuit electrode is electrically connected to the second circuit electrode, and the connection portion is connected to the first circuit member and the second circuit. Between the members, the connection portion is a cured product of the adhesive film for circuit connection of the present invention. If the circuit connection structure is as described above, since the connection portion includes the cured product of the circuit connection secret film of the present invention, The circuit-connected structure _ internal stress (4) is low (four) stress, so that the deformation of the circuit member can be suppressed by 201221606, and (4) and the present invention provides a method for manufacturing a circuit-connected structure. The manufacturing method includes the steps of: obtaining the product 2 by the above if = connection and then between the pair of circuit members, and the upper and the second pair of circuit members including the first circuit member and the second circuit structure 4 The member is formed with a first circuit electrode on a second circuit having a thickness of G3 or less, and a second circuit member is formed on a main surface of the second circuit substrate on the second circuit member, and the circuit is laminated. The connecting portion is formed by heating and pressurizing r, and the connecting circuit electrode and the second circuit are connected to each other so that the first members arranged in the opposite direction are connected to each other. In the manufacturing method, the following circuit can be manufactured;::=r suppresses the deformation of the circuit member. In the state in which the circuit configuration is arranged, the first circuit member is opposed to the first circuit member and the first circuit member. 2 components and arrangement of circuit components:; === circuit =: = The following main circuit substrate is formed on the main surface with = degree of electricity:

S 8 201221606 ^δ/Dypif 上述第2電路構件在厚度為〇3 mm以下 的主面上形成有上述第2電路電極。 路基板 發明2如上所述的電路構件的連接方法,則由於使用本 發月的電路連接用接著膜的固化物來連接電路槿杜 即便將固化物内的内部應力控制為低内部應力可= 地確保相對向的電極之間的導電性。因此,可料二充^ 電路連接構造體,該電路連接構造下, 形,並且具有良好的錢制電路構件的變 用,t二本發明提供—種接著膜的用於電路連接的使 用該接者膜包括:含有接芸密|丨έ日Λ' ϋ 層與ί有接著劑組成物且不含有導電:::: 接著劑層中所含的接著劑組成物包 ja)玻璃轉移溫度為攸〜贼的成膜材料、 =树月曰及(e)潛錄固化劑,±述接著膜的用於電路連接 二使用C電路電極及第2電路電極相對向的狀態 下將第1電路構件與第2電路構件予以電性連接,其中 上C第1電路構件在厚度為Q 3 mm以 的主面上形成有上述第丨電路電極,上述丄 ^度為a3mm«下的第2電路基板的主面上形 弟2電路電極。 〜 藉由將_L述接著膜帛於電路連接,即便當使用該連接 、將包括厚度為〇 3 mm以下的電路基板的電路構件彼 此予以連接時’亦可抑制電路構件的變形,並且可獲得良 好的連接可靠性。 201221606. 或絕.=二 ==:導電性接著_ 維持更優異的連接可靠性。⑷絕緣性粒子。藉此,可 用明’可提供如下的電路連接用接著膜及其使 &quot;方法以及電路構件的連接方法,上述電路連接用接著= 的電路基板的厚度更薄的= 予以連接時,亦可_❹的連接可靠性 了抑制玻璃基板的變形,而且成膜性亦㈣ ::月中,可提供如下的電路連接用接著膜,該電路連接^ ::即:當:厚度為0.3 mm以下的電路構件彼此予以 連接時’亦可實現上述效果。 為讓本發明之上述和其他目的、特徵和優點能更明顯 易,下文特舉較佳實施例,並配合所附圖式,作詳細 明如下。 ^ 【實施方式】 以下,根據需要’ -面參照圖式,一面詳細地對本發 明的較佳實施形態進行說明。然而,本發明並不限定於 下的實施形態。 、 &lt;電路連接用接著膜&gt; 首先,參照圖1來對本實施形態的電路連接用接著臈 1〇進行說明。圖1是表示本發明的一個實施形態的電路^ 接用接著膜的模式剖面圖。電路連接用接著唭1〇包括:含 有接著劑組成物4b及導電粒子5的導電性接著劑層3b = 201221606 35/^ypif 與形成於導電性接著劑片3b卜曰人亡4 + 絕緣性接著劑層3a。 3有接者劑組成物知的 (導電性接著劑層) 導電性接著劑層3b含有:包含(a)Tgg4(rc〜 的成膜材料(以下,有日车驢或「r、 r ,古二,時稱為(a)成分」)、(b)環氧樹 (、 、再為「(b)成分」)及(Ο潛伏性固化劑 以下時稱為「(c)成分」)的接著劑組成物4b盘導 電粒子5。 '、守 作為(a)成分的Tg為贼〜贼的成膜材料是聚合 (poymer*),該聚合物具有使餘的固化性樹脂組成物 固化的作用。使成騎料包含於固化性樹脂組成物,藉此, 當使固化性樹驗成物成形為贿時,可獲得不易裂開、 不易碎裂及不易黏連且易於使用的接著劑膜。 作為如上所述的成膜材料,例如可列舉選自包含苯氧 基樹脂、聚乙烯甲_脂、聚苯乙_脂、聚乙烯丁雜 脂、聚醋樹脂、聚醯胺樹脂、二曱苯樹脂及聚胺酯樹脂的 群組的至少一種聚合物。這些樹脂中,苯氧基樹脂、聚胺 酉曰树月曰及聚乙烯丁酸樹脂較佳。這些樹脂與(b)成分之間 的相溶性優異,可使固化之後的電路連接用接著膜1〇產生 優異的接著性、耐熱性、以及機械強度。 使雙官能苯紛類與表鹵代醇(epihalohydrin )發生反 應直至達到高分子量為止,或使雙官能環氧樹脂與雙官能 苯酚類發生加成聚合反應,藉此來獲得苯氧基樹脂。具體 而言,於存在鹼金屬氫氧化物等的觸媒的條件下,在非反 201221606 i»/5ypif f性溶射,卩4G°C〜12Gt:的溫度來使l莫耳的雙官能 苯盼類與G.985莫耳〜L()15莫耳的表減醇發生反應,藉 此,可獲得上述苯氧基樹脂。 合旦較佳為將雙官能性環氧樹脂與雙官能性苯酚類的調配 备里比设為環氧基/苯酚羥基二丨川^〜丨八丨來進行獲得苯 氧基樹,的加成聚合反應。藉此,可使固化之後的電路連 接用接著膜10的機械特性及熱特性良好。又,較佳為於存 ,鹼金屬化合物、有機磷系化合物、以及環狀胺系化合物 等的觸媒的條件下,在沸點為12(rc以上的醯胺系、醚系、 酮系、内酯系、以及醇系等的有機溶劑中,將原料固含量 設為50質量份以下,加熱至5〇。(:〜2〇〇。(:來進行上述加成 聚合反應。 作為用以獲得苯氧基樹脂的雙官能環氧樹脂,例如可 列舉雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚AD型 環氧樹脂、雙酚S型環氧樹脂、聯苯二縮水甘油醚及經甲 基取代的聯苯二縮水甘油醚。作為雙官能苯紛類,可列舉 具有兩個苯盼性經基的物質,例如對苯二盼類、雙盼A、 雙酚F、雙酚AD、雙酚S、雙酚第、經曱基取代的雙酚第、 二經基聯苯及經甲基取代的二羥基聯苯等的雙酚類。 亦可藉由自由基聚合性的官能基、或其他反應性化合 物來對苯氧基樹脂進行改質。可單獨地使用上述各種苯氧 基樹脂’或可組合地使用兩種以上的上述各種苯氧基樹脂。 聚胺酯樹脂是於分子鏈中具有胺基甲酸酯鍵結的彈性 體,且通常是大致以當量來使飽和聚酯樹脂的活性氫基、S 8 201221606 ^δ/Dypif The second circuit member has the second circuit electrode formed on the main surface having a thickness of 〇3 mm or less. In the method of connecting the circuit member as described above, the circuit board is connected to the circuit using the cured product of the bonding film for circuit connection of the present month, and the internal stress in the cured product can be controlled to a low internal stress. Ensure conductivity between opposing electrodes. Therefore, the second charging circuit can be connected to the structure, the circuit is connected to the structure, and has a good function of the circuit component. The second invention provides the use of the film for the circuit connection. The film includes: a bonding layer containing 芸 Λ Λ ϋ layer and ί having an adhesive composition and containing no conductivity:::: an adhesive composition contained in the adhesive layer ja) glass transition temperature is 攸~ thief film forming material, = tree moon 曰 and (e) sneak recording curing agent, ± for the film connection for the circuit connection 2 using the C circuit electrode and the second circuit electrode in the opposite state, the first circuit member and The second circuit member is electrically connected, wherein the upper C first circuit member has the second circuit electrode formed on a main surface having a thickness of Q 3 mm, and the second circuit substrate having the 丄^ degree a3 mm« The surface of the brother 2 circuit electrode. ~ By _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Good connection reliability. 201221606. Or absolutely.=2 ==: Conductivity Next _ Maintain better connection reliability. (4) Insulating particles. Therefore, it is possible to provide the following bonding film for circuit connection and the method of connecting the method and the circuit member, and when the circuit connection is connected with a thinner circuit board == ❹ 连接 可靠性 了 抑制 抑制 抑制 抑制 抑制 抑制 抑制 :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: :: The above effects can also be achieved when the members are connected to each other. The above and other objects, features, and advantages of the present invention will become more apparent from the <RTIgt; [Embodiment] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following embodiments. &lt;Continuous film for circuit connection&gt; First, the circuit connection for the present embodiment will be described with reference to Fig. 1 . Fig. 1 is a schematic cross-sectional view showing a bonding film for a circuit according to an embodiment of the present invention. The circuit connection is followed by a conductive adhesive layer 3b containing the adhesive composition 4b and the conductive particles 5 = 201221606 35/^ypif and formed on the conductive adhesive sheet 3b, and the insulation is 4 + insulating. Agent layer 3a. (3) The conductive adhesive layer 3b contains: (a) Tgg4 (rc~ film-forming material (hereinafter, there is a Japanese rut or "r, r, ancient Second, the time is called (a) component "), (b) the epoxy tree (, and then "(b) component)) and (after the latent curing agent is called "(c) component") The agent composition 4b is a disk-conducting particle 5. The film-forming material whose Tg as the component (a) is a thief-thief is a polymer (poymer*), and this polymer has a function of curing the remaining curable resin composition. The binder is contained in the curable resin composition, whereby when the curable tree test article is formed into a bribe, an adhesive film which is not easily cracked, is not easily broken, and is not easily adhered and is easy to use can be obtained. The film-forming material as described above may, for example, be selected from the group consisting of a phenoxy resin, a polyethylene methyl ester, a polystyrene resin, a polyethylene butadiene resin, a polyester resin, a polyamide resin, and a diphenyl resin. And at least one polymer of the group of polyurethane resins. Among these resins, phenoxy resin, polyamine eucalyptus and The vinyl butyric acid resin is preferred, and the compatibility between the resin and the component (b) is excellent, and excellent adhesion, heat resistance, and mechanical strength of the film-attached film for bonding after curing can be obtained. A phenoxy resin is obtained by reacting with epihalohydrin until it reaches a high molecular weight or by subjecting a bifunctional epoxy resin to a difunctional phenol to form an addition polymerization reaction. In the presence of a catalyst such as an alkali metal hydroxide, in the non-reverse 201221606 i»/5ypif f-solubilized, 卩4G °C ~ 12Gt: temperature to make l-mole bifunctional benzene with G.985 Moer ~ L () 15 moles of alcohol-reacting reaction, whereby the above phenoxy resin can be obtained. Hedan is preferably a ratio of bifunctional epoxy resin to bifunctional phenol The addition reaction of the phenoxy tree is carried out by using an epoxy group / phenol hydroxy hydroxy oxime ^ 丨 丨 丨 。 。 。 。 。 。 。 。 。 。 。 的 的 的 的 的 的 的 的 的 的 的 的Also, preferably, present, alkali metallization An organic solvent such as a guanamine type, an ether type, a ketone type, a lactone type, or an alcohol type having a boiling point of 12 (rc or more) under the conditions of a catalyst such as a compound, an organophosphorus compound, or a cyclic amine compound. In the case where the solid content of the raw material is 50 parts by mass or less, it is heated to 5 Torr. (: 〜2 〇〇. (: The above-mentioned addition polymerization reaction is carried out. As a bifunctional epoxy resin for obtaining a phenoxy resin, Examples thereof include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol AD type epoxy resin, bisphenol S type epoxy resin, biphenyl diglycidyl ether, and methyl substituted biphenyl diene. Glycidyl ether. As bifunctional benzenes, there are two substances having a benzene-promising thiol group, such as benzophenone, bisphenol A, bisphenol F, bisphenol AD, bisphenol S, bisphenol Bisphenols such as bisphenol di-, di-terminated biphenyls and methyl-substituted dihydroxy biphenyls substituted by mercapto groups. The phenoxy resin may also be modified by a radical polymerizable functional group or other reactive compound. The above various phenoxy resins may be used singly or two or more kinds of the above various phenoxy resins may be used in combination. The polyurethane resin is an elastomer having a urethane bond in a molecular chain, and is usually an active hydrogen group of a saturated polyester resin in an approximate equivalent amount,

S 12 201221606 38759pif 與二異氰酸酯化合物(甲苯二異氰酸酯、二異氰酸酯二笨 基曱烷、六亞甲基二異氰酸酯、苯二亞曱基二異氰酸酯、 以及二異氰酸酯環己基曱烷等)的二異氰酸酯基發生反應 所知的線性高分子,上述飽和聚酯樹脂是多元酸(對苯二 甲酸、間苯二曱酸、鄰苯二曱酸、破珀酸、己二酸、壬二 酸、以及癸二酸等)、與二元醇(乙二醇、1,4-丁二醇、1,5-戊一醇1,6-已二醇、二乙二醇、三乙二醇、聚乙二醇、 以及丙二醇等)發生縮合反應而獲得且具有末端羥基。 上述聚胺酯樹脂容易溶解於有機溶劑例如酯系(乙酸 乙,、乙酸丁g旨等)、酮系(f基乙基_、環己_、以及丙 酮等)、芳香族系(曱苯、二曱苯、以及苯等)及氯系(三 氣乙烯、二氣甲烷等)的溶劑。 一 聚乙烯丁醛樹脂是於分子鏈中具有乙烯縮醛單元的彈 性體’且通f是使乙酸乙_旨聚合,接著進行祕理之後, 使其與搭(甲、乙酸、祕、以及丁酸等)發生反應而 獲得的線性高分子。對於本魏縣#所制的聚乙^丁 輯脂而言,聚合錄佳為·〜25⑻,丁祕化度較佳 為65 mol%以上。 右聚合度不足7GG ’則聚乙焊丁搭樹脂的凝聚力不 足’導致成膜性下降。#聚合度超過MOO,則對樹脂進行 壓接時的麟絲性;^足,無法糊地使導餘子介於被 黏接體的電極之間’從而難以獲得充分的連接可靠性。又, 若丁祕化度不足65 m〇1%,顯基或乙酿基的比例增 加,從而難以獲得充分的連接可靠性。 13 201221606 _45t〜7(^、^__T04(rC〜7(rC,^ ts的成膜」 較佳為5(rc〜赃。若為具有此種 用接著膜in料’則错由彈性變形來將固化之後的電路連接 内產生的内部應力予以吸收,使電路構件的翹 因此,可獲得良好的連接可靠性。 成膜材料量份的接著劑組成物4b而言, 2〇質量份m t iQ f量份〜5G f量份,更佳為 制基材的變形(勉曲量),從而提供電氣Ϊ 接!·生更優異的電路連接轉著膜1〇。 π大分子f越大’則越容易麟成膜性,而且 β e* A定對接著劑組成物4b的流動性產生影響的 炫融黏度。成膜材料的重量平均分子量(Mw)較佳為测 〜150000 ’尤佳為10000〜8〇〇〇〇。若該值為5細以上, 則存在易於獲得良好的成膜性的傾向,另一方面若上述 值為15〇_以下’則存在容易獲得與其他成分之間的良好 的相溶性的傾向。 再者’所謂上述「重量平均分子量」,是指依照下述表 1所示的條件且根據凝膠滲透色譜法(Gel Permeati〇nS 12 201221606 38759pif occurs with diisocyanate groups of diisocyanate compounds (toluene diisocyanate, diisocyanate diphenyl decane, hexamethylene diisocyanate, phenyldiamidylene diisocyanate, and diisocyanate cyclohexyl decane, etc.) The linear polymer known in the reaction, the above saturated polyester resin is a polybasic acid (terephthalic acid, isophthalic acid, phthalic acid, spearic acid, adipic acid, sebacic acid, and sebacic acid) Etc., with glycol (ethylene glycol, 1,4-butanediol, 1,5-pentanol 1,6-hexanediol, diethylene glycol, triethylene glycol, polyethylene glycol, And a propylene glycol or the like) obtained by a condensation reaction and having a terminal hydroxyl group. The above-mentioned polyurethane resin is easily dissolved in an organic solvent such as an ester system (acetic acid acetate, acetic acid, etc.), a ketone system (f-ethyl group, cyclohexyl group, and acetone), and an aromatic system (anthracene, diterpene, etc.). Solvents of benzene, benzene, etc. and chlorine (three gas ethylene, two gas methane, etc.). A polyvinyl butyral resin is an elastomer having an ethylene acetal unit in a molecular chain, and a pass f is a polymerization of acetic acid, followed by a secret treatment, and then it is combined with a mixture (methic acid, acetic acid, secret, and butyl). A linear polymer obtained by a reaction such as an acid. For the polyethyl methacrylate prepared by Benwei County, the polymerization record is preferably ~25(8), and the degree of sclerotherapy is preferably 65 mol% or more. When the right polymerization degree is less than 7 GG ', the cohesive force of the polyethylene-containing styrene resin is insufficient, resulting in a decrease in film formability. When the degree of polymerization exceeds MOO, the lining property at the time of crimping the resin is not sufficient, and the guide is not interposed between the electrodes of the bonded body, so that it is difficult to obtain sufficient connection reliability. Further, if the degree of cryptogenicity is less than 65 m 〇 1%, the proportion of the alkyl group or the ethyl ketone group is increased, so that it is difficult to obtain sufficient connection reliability. 13 201221606 _45t~7 (^, ^__T04 (rC~7 (rC, ^ ts film formation) is preferably 5 (rc~赃. If there is such an in-film in-material), the error will be elastically deformed. The internal stress generated in the circuit connection after curing is absorbed, so that the connection of the circuit member can be obtained, and good connection reliability can be obtained. For the adhesive composition 4b of the film-forming material component, the amount of 2 〇 mass parts mt iQ f Parts ~ 5G f parts, more preferably the deformation of the substrate (the amount of distortion), thus providing electrical connection! · Better circuit connection to turn the film 1 〇. The larger the π macromolecular f, the easier The filming property of the lining, and the β e* A is a viscous viscosity which affects the fluidity of the adhesive composition 4b. The weight average molecular weight (Mw) of the film-forming material is preferably measured to be ~150000', especially preferably 10000~8 When the value is 5 or more, the film forming property tends to be easily obtained. On the other hand, if the value is 15 Å or less, it is easy to obtain a good phase with other components. The tendency of solubility. The above-mentioned "weight average molecular weight" means according to Table 1 below. Conditions and by gel permeation chromatography (Gel Permeati〇n

Chromatography,GPC ),使用標準聚苯乙烯的校準曲線 (calibration curve )來進行測定所得的值。Chromatography, GPC), the value obtained by measurement using a standard polystyrene calibration curve.

S 201221606 38759pif [表1] 裝置 檢測器 ---東曹股份有限公司製造GPC-8020 _ #盼份右附Α ίϊΊ A TM 一 管柱 -----_ 不·曰队w ·月ί*民公取适 日立化成工業股份有限公司製造Gelpack ---- GL-A-160-S + GL-A1 ^〇-SfT?nnnPihr 試料濃度 溶劑 —一 _ izu mg/j mi ---- 四ϋ 口去咕 &quot; 注入量 —------- ^ A.^ 壓力 &quot; 洁酱 --------30 kg 卩 cm2 ~ &quot;It里 ------ 1.00 ml/minS 201221606 38759pif [Table 1] Device Detector---Dongcao Co., Ltd. Manufactured GPC-8020 _ #盼份右附Α ϊΊ TM A TM One-column-----_ 不·曰队w·月ί* Mingong Takes Hitachi Chemical Industry Co., Ltd. to manufacture Gelpack ---- GL-A-160-S + GL-A1 ^〇-SfT?nnnPihr Sample concentration solvent - one _ izu mg/j mi ---- four mouth Go 咕&quot; Inject amount-------- ^ A.^ Pressure&quot; Cleansing sauce--------30 kg 卩cm2 ~ &quot;It ------ 1.00 ml/min

作為(b)成分的環氧樹脂,可單獨或組合兩種以上地 使用自表氯醇與選自包含雙紛A、雙紛F及雙紛AD等的 群組的至少-種雙盼衍生出的雙驗型環氧樹脂、自表氣醇 與苯紛祕及甲_中的一種祕或兩種祕衍生出的酴 _氧樹脂、具有包含蔡環的骨架的萘系環氧樹脂、以及 縮水甘油胺、縮水甘油驗、聯苯、及脂環式等的於一個分 子内具有兩個以上的縮水甘油基的各種環氧化合物等。根 據防止電遷移(electromigrati〇n)的觀點,環氧樹脂較佳 為使用使雜質離子(i〇n)(Na+、cm或水解性 至300ppm以下的高純度品。 H 上述環氧樹脂卜由於可廣泛地獲得分子量不同的等 級(grade),且可任意地對接著性或反應性等進行設定, 因,,雙齡型環氧樹脂較^ _型環额脂中,雙紛f ,環氧樹脂尤佳。雙盼F型環氧樹脂的黏度低,藉由與苯 組合地使用,可容易且大範圍地對電路^接用接 者膜H)的流動性進行設定。又,雙紛F型環氧樹脂亦具 15 201221606 ^e/^ypif 有如下的優點,即,容易使電路連接用接著膜1〇產生良好 的黏著性。 相對於總質量為100質量份的接著劑組成物牝而言, 環氧樹脂的調配量較佳為5質量份〜50質量份,更佳為2〇 質量份〜40質量份。於環氧樹脂的調配量不足5質量份的 情,下,當對電路構件彼此進行壓接時,存在電路連接用 接著膜10的流動性下降的傾向,於環氧樹脂的調配量超過 5〇質量份的情形下,當進行長期保料,存在電路連接用 接著膜10發生變形的傾向。 作為(C)成分即潛伏性固化劑,例如可列舉咪唑系、 醯肼系、胺倾亞胺及雙氰胺q單獨地錢上述潛伏性 固化劑或可組合地使用兩種以上的上述潛伏性固化劑。而 ^ ’亦可將潛伏性EHb趣分駿·、抑制等加以組 二1再者L為了使可使用時間延長,較佳為利用聚胺醋系、 f S曰系的南分子物質等來將潛伏性固化劑予以包覆而實現 微膠囊化。 相對於100 »量份的環氧樹脂而t,潛伏性固化劑的 =量較,為1G質量份〜細質量份更佳為·質量份 二質里份。藉此,於固化反應中,可獲得充分的反應 :潛伏性固化劑的調酉己量不足10質量份,則無法獲得 雷^f應率’從而存在難以獲得良好的接著強度及連接 則疒在頃向。若潛伏性固化劑的調配量超過200質量份, 降下的傾向,例如電路連接用接著膜10的流動性下 矣電阻上升,電路連接用接著膜10的適用期(pot 201221606 58〇ypif life)縮短。 ^讀喊物4b巾分散有導魏子5。由於電路連 =接賴H)含有導電粒子5,因此,電路電極的位置或 面度的不均因導電粒子5的變形而被吸收,接觸 Ϊ著^〇?^更穩定的電性連接。又,由於電路連接用 接者膜10含有導電粒子5,目此,導電粒子5有時可衝破 電路電極表面的氧化層或鈍態層而發生接觸,從 性連接更穩定。 使电 作為如上所述的導電粒子5,可列舉Au、The epoxy resin as the component (b) may be used alone or in combination of two or more kinds from at least one type of epichlorohydrin and at least one type selected from the group consisting of a double A, a double F and a double AD. Double-type epoxy resin, self-evaporating alcohol and benzene secrets, and a secret or two secrets of 甲_oxygen resin, naphthalene epoxy resin having a skeleton containing Cai ring, and shrinkage Various epoxy compounds having two or more glycidyl groups in one molecule, such as glycerolamine, glycidol, biphenyl, and alicyclic. From the viewpoint of preventing electromigration, it is preferred to use an epoxy resin such as an impurity ion (i〇n) (Na+, cm or a highly pure product having a hydrolyzability to 300 ppm or less. A grade with a different molecular weight is widely obtained, and the adhesion or reactivity can be arbitrarily set. Therefore, the double-aged epoxy resin is more than the _ ring of the pre-fat, and the epoxy resin is epoxy resin. In particular, the double-preferred F-type epoxy resin has a low viscosity, and can be easily and widely used to set the fluidity of the circuit of the contact film H) by using it in combination with benzene. Moreover, the double-type F-type epoxy resin also has the advantage that it is easy to make the adhesive film for the circuit connection 1 〇 to have good adhesion. The blending amount of the epoxy resin is preferably 5 parts by mass to 50 parts by mass, more preferably 2 parts by mass to 40 parts by mass, based on 100 parts by mass of the total mass of the adhesive composition 牝. When the amount of the epoxy resin is less than 5 parts by mass, when the circuit members are pressure-bonded to each other, the fluidity of the circuit-connecting adhesive film 10 tends to decrease, and the amount of the epoxy resin is more than 5 〇. In the case of the mass portion, there is a tendency that the film for connecting the film 10 is deformed when the long-term material is to be held. Examples of the latent curing agent which is the component (C) include an imidazole-based, an anthraquinone-based, an amine-imide, and a dicyandiamide. The above-mentioned latent curing agent may be used alone or two or more kinds of the above-mentioned latent properties may be used in combination. Hardener. And ^ ' can also be used to group latent EHb, suppression, etc., in addition to L, in order to extend the usable time, it is preferable to use a polyamine vinegar, f S 曰 system of southern molecular substances, etc. The latent curing agent is coated to achieve microencapsulation. With respect to 100 parts by weight of the epoxy resin, t, the amount of the latent curing agent is more than 1 G mass parts to fine parts by mass. Thereby, in the curing reaction, a sufficient reaction can be obtained: if the amount of the latent curing agent is less than 10 parts by mass, the tensile response rate cannot be obtained, and it is difficult to obtain good bonding strength and the connection is Is going. When the amount of the latent curing agent is more than 200 parts by mass, the tendency to lower the pressure, for example, the fluidity of the bonding film 10 for circuit connection increases, and the pot life of the film for connecting film 10 (pot 201221606 58〇ypif life) is shortened. . ^ Read the shout 4b towel scattered with the guide Weizi 5. Since the circuit connection = H) contains the conductive particles 5, the positional or unevenness of the circuit electrodes is absorbed by the deformation of the conductive particles 5, and the contacts are more stable and electrically connected. Further, since the circuit connecting connector film 10 contains the conductive particles 5, the conductive particles 5 may be broken by the oxide layer or the passive layer on the surface of the circuit electrode, and the connection is more stable. Electric power is as described above for the conductive particles 5, and Au,

Cu、以及焊錫等的金屬粒子或碳粒子等。根據獲得充分的 適用期的觀點,導電粒子5的最外層並非為犯、Cu等的 過渡金屬類,較佳為Au、Ag、以及鉑金屬的責 其中’ Au更佳。又,導電粒子5可為利用Au等的貴金屬 類來將Ni等的過渡金屬類的表面予以包覆而成的導電粒 子,亦可為藉由包覆等來將上述金屬等的導通層形成於非 導電性的玻璃、陶瓷(ceramic)、以及塑膠(plastic)等且 將最外層設為貴金屬類的導電粒子。 較佳為使用藉由包覆等來將導通層形成於塑膠而成的 粒子或熱熔融金屬粒子作為導電粒子5。上述粒子因加熱 及加壓而具有變形性,因此,可使在連接時與電路電極發 生接觸的接觸面積增加,或可將電路構件的電路端子的厚 度不均予以吸收,從而可使電路連接的可靠性提高。 設置於導電粒子5的最外層的責金屬類的包覆層的厚 度較佳為100A以上。藉此,可充分地使所連接的^路之 17 201221606. / jypif 間的電阻減小。然而,於在Ni等的過渡金屬上設置責金 類的包覆層的情形時,該包覆層的厚度較佳為3〇〇A以上。 理由在於:由於在導電粒子5混合分散時產生的貴金屬類 的包覆層的缺4貝專,Ni專的過渡金屬露出至接著劑膜中, 因此,由於該過渡金屬的氧化還原作用而產生游離'自由 基,從而使電路連接用接著膜1〇的保存穩定性下降。另一 方面,貴金屬類的包覆層的厚度的上限並無特別的限制, 但根據製造成本的觀點,較佳為丨μπι以下。 導電粒子5的平均粒徑較佳為必須比藉由電路連接】 接著膜10來連接的電路構件的相鄰接的電極的最小剛 更j且於電路電極的⑧度存在不均的情形時,上述導q 粒子5的平均純大於該高度的不均n奸$的平★ 粒徑較佳為1 μηι〜10帅,更佳為2师〜5 μιη。若平 ,不U ’畴在如下的傾向,即,無法對應於電路, 極的局度的不均且電路電極之_導紐容易下降,若 則存在相鄰軸電極之間賴 信^者ϋ平均粒控」是指以如下的方式所測定¥ 。亦即’利用掃描型電子顯微鏡(SEM( Scanning編⑽ 意製4造’產品名 彡-妹子的最A觀最小料行败。將該最大 的積的平方根設為上雜子的―:錄徑。接 者針對5〇個任意地選擇的導電粒子,以Cu, metal particles such as solder, carbon particles, and the like. From the viewpoint of obtaining a sufficient pot life, the outermost layer of the conductive particles 5 is not a transition metal such as Cu or Cu, and is preferably Au, Ag, and platinum metal. In addition, the conductive particles 5 may be conductive particles obtained by coating a surface of a transition metal such as Ni with a noble metal such as Au, or a conductive layer such as the above may be formed by coating or the like. Non-conductive glass, ceramic, plastic, etc., and the outermost layer is made of a noble metal conductive particle. It is preferable to use particles or hot-melt metal particles in which a conductive layer is formed of a plastic by coating or the like as the conductive particles 5. Since the particles are deformed by heating and pressurization, the contact area which comes into contact with the circuit electrode at the time of connection can be increased, or the thickness of the circuit terminal of the circuit member can be absorbed unevenly, and the circuit can be connected. Increased reliability. The thickness of the cladding layer of the metal-containing layer provided on the outermost layer of the conductive particles 5 is preferably 100 A or more. Thereby, the resistance between the connected circuits 17 201221606. / jypif can be sufficiently reduced. However, when a coating layer of a charge-receiving type is provided on a transition metal such as Ni, the thickness of the coating layer is preferably 3 Å or more. The reason is that since the noble metal-based cladding layer which is generated when the conductive particles 5 are mixed and dispersed is dispersed, the Ni-specific transition metal is exposed to the adhesive film, and therefore, the transition metal is released due to the redox action. 'Free radicals, so that the storage stability of the film-attached film 1 下降 is lowered. On the other hand, the upper limit of the thickness of the coating layer of the noble metal is not particularly limited, but is preferably 丨μπι or less from the viewpoint of production cost. It is preferable that the average particle diameter of the conductive particles 5 is larger than the minimum of the adjacent electrodes of the circuit member connected by the film 10 and the case where the circuit electrodes are uneven at 8 degrees. The average purity of the above-mentioned Q-particles 5 is greater than the height of the unevenness. The particle size of the particles is preferably 1 μηι 10 to 10, more preferably 2 divisions to 5 μιη. If it is flat, the U' domain does not tend to correspond to the circuit, the unevenness of the poles is uneven, and the lead of the circuit electrode is liable to fall, and if there is a relationship between the adjacent shaft electrodes, "Average granulation" means that it is measured in the following manner. That is to say, 'using a scanning electron microscope (SEM (Scanning) (Scanning (10), Manufactured by the manufacturer's name, 最 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹 妹The receiver is directed to 5 arbitrarily selected conductive particles to

S 18 201221606 38759pif =粒錢行測定’將_次粒徑的平均值設為平均粒徑。再 定。亦同樣崎後㈣⑷輯錄子的平均粒徑進行測 ,對於總質量為刚質量份的接著劑組成物扑而言, / ;立子5的調配量較佳設為〇j質量份〜3〇質量份更 番Γ為ο.1質量份〜20質量份。藉此,可防止由過剩的導 電粒子5引起的鄰接電路的短路等。 根據用it ’接著劑組成物4b例如亦可更含有軟化 抗老化劑、阻燃劑、色素、觸變劑(thixotropic agent)、 、及夕炫偶合劑(silanec〇Uplingagent)等的添力口劑。 (絕緣性接著劑層) 艰杰ί緣&amp;接著劑層中所含的接著劑組成物4a只要可 即 f狀i且可於電路構件連接時抑制電路構件的變形 ^該接著劑組成物&amp;可與導電性接著劑層%中所含 ^接者劑組成物4b相同,亦可無接轴域物仆不同。 =^較佳為以使絕緣性接著劑層3a的流動性大於導電性 進$ = = 3b的流動性的方式’對上述成分的種類及調配量 導電性接著劑層⑨及/或絕紐接著㈣%可更含有 膜),緣性粒子(以下,有時稱為「⑷成分」)。藉此, .化之後的接著劑層内的内部應力進一步被緩和。再 ’絕緣性接著綱3a更佳為含有(d)絕緣性粒子。 &amp;作為如上所述的(d)絕緣性粒子,例如可列舉石夕土、 乳化紹等的無機粒子;或聚⑪氧橡膠、甲基丙稀酸甲醋- 201221606 丁二稀-苯乙稀(Methylmethacrylate Butadiene Styrene, MBS)、丙烯酸橡膠、聚甲基丙烯酸曱酯、及聚丁二烯橡 膠等的有機粒子。 又,作為(d)絕緣性粒子,除了上述粒子以外,例如 亦可列舉丙烯酸樹脂、聚酯、聚胺酯、聚乙烯丁醛、聚芳 酉旨、聚苯乙烯、丁腈橡膠(Nitrile Butadiene Rubber,NBR)、 苯乙稀-丁二稀橡膠(Styrene Butadiene Rubber,SBR)及 聚矽氧改質樹脂等以及含有包含這些物質作為成分的共聚 物的粒子。絕緣性粒子較佳為分子量為1〇〇萬以上的有機 微粒子或具有三維交聯構造的有機微粒子。此種絕緣性粒 子對於固化性組成物的分散性高。再者,此處所謂「具有 三維交聯構造」,是表示聚合物鏈具有三維網狀構造,例 如,利用具有兩個以上的可與聚合物的反應點鍵結的官能 基的交聯劑來對具有多個反應點的聚合物進行處理,藉^ 來獲得具有如上所述的構造的絕緣性粒子。分子量為 萬以上的有機微粒子及具有三維交聯構造的有機微粒子4 佳為對於溶劑的溶解性均低。對於溶劑的溶解性低的上3 絕緣性粒子可更顯著地獲得上述效果。又,根據更顯^ 獲得上述效果峨點’分子量為丨⑻萬以上的有機微粒」 3有三維交聯構造有機微粒子較佳為包含(甲基)丙稀g 2初氧共聚物、聚路(甲基)丙婦酸共聚物或上⑹ =的錯合物的絕緣性粒子。又,例如亦可使用如 利特開200M50573公報所揭示 胺粒子等的絕緣錄子作為() +子及S 18 201221606 38759pif = Grain Row Measurement 'The average value of the_th order particle diameter is set as the average particle diameter. Set again. Similarly, the average particle size of the catalogue of the Kawasaki (4) (4) is measured. For the composition of the adhesive having a total mass of just a part by mass, the blending amount of the pillar 5 is preferably set to 质量j by mass to 3 parts by mass. More Panyu is ο. 1 part by mass to 20 parts by mass. Thereby, it is possible to prevent a short circuit or the like of the adjacent circuit caused by the excessive conductive particles 5. According to the use of the 'adhesive composition 4b, for example, it may further contain a softening anti-aging agent, a flame retardant, a pigment, a thixotropic agent, a silanec〇Uplingagent, etc. . (Insulating Adhesive Layer) The adhesive composition 4a contained in the adhesive layer can suppress the deformation of the circuit member as long as it can be f-shaped and can be connected to the circuit member. It may be the same as the composition 4b contained in the conductive adhesive layer %, or may be different from the axial region. It is preferable that the fluidity of the insulating adhesive layer 3a is greater than the fluidity of the conductivity of $==3b. 'The type and amount of the above-mentioned components and the conductive adhesive layer 9 and/or the last (4) % may contain more film), and edge particles (hereinafter, sometimes referred to as "(4) component"). Thereby, the internal stress in the adhesive layer after the formation is further alleviated. Further, the insulating layer 3a preferably contains (d) insulating particles. &amp; As the (d) insulating particles as described above, for example, inorganic particles such as Shixia, emulsified, etc.; or poly 11 oxy rubber, methyl methacrylate - 201221606 diced dilute-styrene (Methylmethacrylate Butadiene Styrene, MBS), organic particles such as acrylic rubber, polymethyl methacrylate, and polybutadiene rubber. Further, examples of the (d) insulating particles include acrylic resin, polyester, polyurethane, polyvinyl butyral, polystyrene, polystyrene, and nitrile rubber (NBR). ), Styrene Butadiene Rubber (SBR), polyfluorene-modified resin, and the like, and particles containing a copolymer containing these substances as a component. The insulating particles are preferably organic fine particles having a molecular weight of 10,000 or more or organic fine particles having a three-dimensional crosslinked structure. Such insulating particles have high dispersibility for a curable composition. In addition, the term "having a three-dimensional crosslinked structure" herein means that the polymer chain has a three-dimensional network structure, and for example, a crosslinking agent having two or more functional groups bonded to a reaction point of the polymer is used. The polymer having a plurality of reaction sites is treated to obtain insulating particles having the configuration as described above. The organic fine particles having a molecular weight of 10,000 or more and the organic fine particles 4 having a three-dimensional crosslinked structure are preferably low in solubility in a solvent. The above effects can be obtained more remarkably with respect to the upper 3 insulating particles having low solubility in a solvent. Further, according to the above-mentioned effect, the organic fine particles having a molecular weight of 丨(8) million or more are obtained. 3 The three-dimensional crosslinked structure organic fine particles preferably contain a (meth) propylene g 2 oxy-copolymer and a poly ( Insulating particles of a methyl group of a malo acid copolymer or a complex of (6) =. Further, for example, an insulating recording such as an amine particle disclosed in Japanese Patent Publication No. 200M50573 can be used as () + and

S 20 201221606 38759pif 此外 使用具有核殼(core Shell)型的構造且核 層的組成減層的組成不__錄子偶⑷成分。 作為核殼㈣絕緣性有機粒子,具體而言可列舉以聚石夕氧_ 丙烯I橡膠作為核來對叫酸樹脂進行接枝所得的粒子、 及以,烤I躲物料核來對丙烯酸樹脂進行接枝所得的 粒子等X 一亦可使用如國際專利公開第2_,⑹術號 J冊子所揭7F的核㈣料氧微粒子、如國際專利公開第 2^0=020005旒小冊子所揭示的(甲基)丙稀酸院基醋丁二 烯-苯乙烯共聚物或錯合物、(甲基)丙烯酸烧基酯切氧共 聚物或錯合物及聚發氧_(甲基)丙烯酸共聚物或錯合物等 的絕緣性有機粒子、如日本專利特開2GG2-256G37號公報 所揭不的核殼構造聚合物粒子、以及如日本專利特開 2004 18803號公報所揭示的核殼構造的橡膠粒子等。可單 獨地使用-種上述核殼型的絕緣錄子,亦可組合地使用 兩種以上的上述核殼型的絕緣性粒子。再者,此種⑷絕 緣性粒子的平均粒徑較佳為〇.〇1 μιη〜2 μΓη左右。 於導電性接著_ 3b含有⑷絕緣性粒子的情形時, 相對於總質量為100質量份的接著劑組成物4b而言,⑷ 絕緣I·生粒子及導電粒子5的合計調配量較佳為⑽質量份以 了上更佳4 60 M里份以下。若絕緣性粒子及導電粒子的合 。十-周配量超過80質量份,存在成膜性及對於電極的密著 f下降的傾向。又’於絕緣性接著劑層3a含有⑷絕緣 粒子的巧時’相對於總質量為腦質量份的接著劑組 '物4a而。(d)絕緣性粒子的調配量較佳為6〇質量份 21 201221606 μ哲旦馬㈣份以τ。若絕緣性粒子的調配量超過 里份,則存在成膜性及導電粒子5對於電極的密著 下降的傾向。 導電性接著劑層3b的厚度較佳為3 μηι〜ΐ2㈣更佳 μηι 1〇 μΐΏ。又,絕緣性接著劑層%的厚度較佳為 所=二21师’更佳為14 μηι〜16 μηι。由於各層具有如上 可靠性g良Γ,可使作業性、導電粒子捕捉性及連接 而 電路連接用接著膜10的厚度較佳為10㈣〜40 完全足1()μηι,畴在如下的傾向,即,無法 若上==予轉埋,接著力會下降, „過40 μιη,則存在如下的傾向,即於進行 日’,枒脂會溢出,從而污染周邊零件。 、 及導St接著劑層几相關的包含接著劑組成物4b 接著劑齡物、與絕緣性接著劑層%相關的包含 合物分解或分散於有機溶劑來 =3= ί此以,化劑的活性溫度以下的溫度來 性接糟此,可形成導電性接著劑们b及絕緣 1他=形生接著劑層3b及絕緣性接著劑層3a的 曰及、,邑緣性接著劑層3a的構成成分 動性之後,添加溶劑來升m成成刀進仃加熱以確保流 合劑絲成㈣液,將該塗佈液塗佈於剝S 20 201221606 38759pif In addition, a composition having a core shell type and a composition of a core layer of the core layer is not composed of a __recorder (4) component. Specific examples of the core-shell (IV) insulating organic particles include particles obtained by grafting an acid resin with a polysulfide-propylene I rubber as a core, and baking the material core to perform an acrylic resin. The particles obtained by grafting, etc., can also be used as disclosed in International Patent Publication No. 2_, (6) Nuclear (4) oxygen microparticles disclosed in Book No. JF, as disclosed in the pamphlet of International Patent Publication No. 2^0=020005 (A) Acrylic acid based acetobutadiene-styrene copolymer or complex, (meth)acrylic acid alkyl ester oxy-copolymer or complex and polyoxy-(meth)acrylic acid copolymer or Insulating organic particles such as a complex compound, a core-shell structured polymer particle as disclosed in Japanese Laid-Open Patent Publication No. 2 GG2-256G37, and a rubber particle having a core-shell structure as disclosed in Japanese Laid-Open Patent Publication No. 2004-18803 Wait. The above-described core-shell type insulating recording sheets may be used singly, or two or more kinds of the core-shell type insulating particles may be used in combination. Further, the average particle diameter of the (4) insulating particles is preferably about 〇1 μιη to 2 μΓη. In the case where the conductive material _3b contains (4) insulating particles, the total amount of the insulating material I/green particles and the conductive particles 5 is preferably (10) with respect to the adhesive composition 4b having a total mass of 100 parts by mass. The mass fraction is better than 4 60 M. If the insulating particles and the conductive particles are combined. When the amount of the ten-week blend is more than 80 parts by mass, the film formability and the adhesion f to the electrode tend to decrease. Further, the insulating adhesive layer 3a contains (4) the intimate particles of the insulating particles with respect to the total mass of the adhesive mass "object 4a". (d) The amount of the insulating particles is preferably 6 parts by mass. 21 201221606 μ Zhedan horse (four) parts are τ. When the amount of the insulating particles is more than the inner portion, the film forming property and the adhesion of the conductive particles 5 to the electrode tend to decrease. The thickness of the conductive adhesive layer 3b is preferably 3 μηι to ΐ2 (four), more preferably μηι 1〇 μΐΏ. Further, the thickness of the insulating adhesive layer % is preferably from 2 to 21 divisions, more preferably from 14 μη to 16 μm. Since each layer has the above-described reliability, it is preferable that the thickness of the circuit-attaching film 10 for workability, conductive particle trapping property, and connection is preferably 10 (four) to 40, and the total thickness is 1 () μηι, and the domain tends to be as follows. If it is not == to be buried, then the force will drop, „over 40 μιη, there is a tendency that on the day of the day, the rouge will overflow, thereby contaminating the surrounding parts. The adhesive composition comprising the adhesive composition 4b and the composition of the insulating adhesive layer is decomposed or dispersed in an organic solvent, and the temperature is below the activation temperature of the chemical. In this case, the conductive adhesive b and the insulating adhesive layer 3b and the insulating adhesive layer 3a are formed, and the constituent components of the insulating adhesive layer 3a are activated, and then a solvent is added. To increase the m into a knife and heat it to ensure that the flow agent is formed into a (four) liquid, and the coating liquid is applied to the stripping

S 22 201221606 JS/^ypif 離性基材上,以固化劑的活性溫度以下的溫度來將溶劑予 以除去。 根據使接著劑組成物4a及接著劑組成物4b的溶解性 提高的觀點,此時使用的溶劑較佳為芳香族烴系溶劑與含 氧系溶劑的混合溶劑。又,作為剝離性基材,例如可列舉 聚對笨二曱酸乙二醇酯(p〇lyethylene , PET)、聚㈣、聚乙稀、以及聚料的具树熱性及耐溶 劑性的聚合物膜。尤佳使祕表面處理而具有脫模 PET膜辇。 剝離性基材的厚度較佳為2〇 μιη〜75吨。若該厚度不 足20,’則存在如下的傾向,即’於進行臨時壓接時難 以進行操作,右上述厚度超過75哗,則存在於電路連接 用接著膜10與剝離性基材之間產生捲繞滑脫的傾向。 作為電路連接用接著膜10的製法,例如可採用對以上 述Γί形成的導電性接著劑層4b及絕緣性接著劑層如進 方法、核賴各層蹄㈣的方法 態的電路連接用接著膜可用作覆晶玻璃 碰的,/ss ’ C°G)等的安裝過程中的將玻璃等比較 硬的基^半導體元件Μ接合的異向導雜接著劑。 體元電路連接用接著膜介於玻璃基板及半導 者所且右的:構件之間的狀態下進行加熱及加壓,將兩 某板^原声兔7電極被此予以電性連接。此處,當使用有 基板的厚度為0.3 _以下的電路構件時龜曲尤其會成 23 201221606 yylf =連時’可有效果地使用本實施形態 亦即,可將如下的接著膜用於電路連接用途,該接著 :包j.含有接著劑組成物及導電粒子的導電性接 接著劑組成物且不含有導電粒子的絕緣性接著 =移層中所含的接著劑組成物包含⑷破 璃轉移^度為4〇c〜7(rc的成膜 =固化劑,上述電路連接用途是於使第 對向的狀態下,將在厚度為。·二 ZV Iff 面上形成有第1電路電極的第1電路 J有第ίa3 mm以下的第2電路基板的主面上 /成有第電路電極的第2電路構件Μ電性連接。 路槿Τί用有基板的厚度進而為g·2 以下的電 路構件時,翹曲的問題更顯著。可 冤 :用接著膜的電路基板的厚度的::= 有多::有=i=電元r的電路構件中設置 相對向地配置的電路構件的電路電極對設置於 置,於使電路連接用接著膜介於相對向刀進行配 之間的狀態下進行加熱及加壓,藉此 置的電路電極 的電路電極彼此予以電性連接而“電向地配置 如此’藉由對相對抗地配置的電路構件進=及加S 22 201221606 JS/^ypif The solvent is removed from the inert substrate at a temperature below the activation temperature of the curing agent. The solvent to be used at this time is preferably a mixed solvent of an aromatic hydrocarbon solvent and an oxygen-containing solvent, from the viewpoint of improving the solubility of the adhesive composition 4a and the adhesive composition 4b. Further, examples of the releasable substrate include a polymer having a heat and solvent resistance of polyethylene terephthalate (PET), poly(tetra), polyethylene, and a polymer. membrane. It is especially good to have a surface treated with a release film PET film. The thickness of the release substrate is preferably from 2 μm to 75 tons. When the thickness is less than 20, the tendency to perform the temporary pressure bonding is difficult. When the thickness of the right side exceeds 75 Å, the film is formed between the circuit-connecting adhesive film 10 and the peelable substrate. The tendency to slip off. As a method of manufacturing the bonding film for circuit connection 10, for example, a bonding film for circuit connection in a method state in which the conductive adhesive layer 4b formed of the above-mentioned layer and the insulating adhesive layer are advanced, and the layers of the layers (4) are used can be used. Used as a flip-chip glass bump, /ss 'C°G), etc. During the mounting process, etc., a relatively hard base such as glass is bonded to the semiconductor element. The voxel circuit connection bonding film is heated and pressurized in a state in which the film is interposed between the glass substrate and the right member of the semiconductor, and the two electrodes 7 are electrically connected. Here, when a circuit member having a thickness of the substrate of 0.3 Å or less is used, the tortoise is particularly 23 23 201221606 yylf = continuous time. The present embodiment can be used effectively, that is, the following film can be used for circuit connection. Use, the following: package j. Conductive bond composition containing an adhesive composition and conductive particles and insulating layer containing no conductive particles. Next, the adhesive composition contained in the transfer layer contains (4) a glass transfer transfer^ The degree is 4〇c~7 (the film formation of rc = curing agent, and the above-mentioned circuit connection use is the first step of forming the first circuit electrode on the surface of the second ZV Iff surface in the opposite direction. In the circuit J, the second circuit member on which the second circuit board is formed on the second circuit board of the third circuit or the second circuit member is electrically connected. When the thickness of the substrate is further than the circuit component of g·2 or less The problem of warpage is more remarkable. It is possible to use: the thickness of the circuit substrate using the film: ::= There are many:: The circuit electrode pair of the circuit member which is disposed oppositely in the circuit member having = i = cell r Set in the ground so that the circuit is connected with the film The heating and pressurization are performed in a state in which the knives are placed, and the circuit electrodes of the circuit electrodes are electrically connected to each other, and the electric components are arranged in such a manner that the circuit components are disposed in a relatively resistant manner. plus

S 24 201221606t 壓,相對向地配置的電路電極彼此藉由經由導電粒子的接 觸及直接接觸中的一種接觸方式或兩種接觸方式而電性連 接。 &lt;電路連接構造體&gt; 圖2是表示於一對電路構件即基板1與半導體元件2 之間插入有本實施形態的電路連接用接著膜10的積層體 200的模式剖面圖,圖3疋表不對圖2所示的積層體2〇〇 進行加熱及加壓而獲得的本實施形態的電路連接構造體 100的模式剖面圖。 圖3所示的電路連接構造體100包括:於玻璃基板u (第1電路基板)的主面上形成有配線圖案(pattern) lb (第1電路電極)的基板1 (第i電路構件)、於積體電路 (Integrated Circuit,1C)晶片(chip) 2a (第 2 電路基板) 的主面上形成有凸塊(bump)電極2b (第2電路電極)的 半導體元件2 (第2電路構件)、以及介於基板丨及半導體 元件2之間的電路連接用接著膜1〇的固化物6a及固化物 6b (連接部)。於電路連接構造體1〇〇中,配線圖案化及 凸塊電極2b於相對向地配置的狀態下電性連接。 此處,配線圖案lb較佳為由透明導電性材料形成。典 型而§ ’將銦·錫氧化物(Indium Tin Oxide,ITO)用作透 明導電性材料。又,凸塊電極2b由具有可作為電極而發揮 功能的程度的導電性的材料(較佳為選自包含金、銀、錫、 翻知的金屬及ITO的群組的至少一種材料)形成。 於電路連接構造體100中,相對抗的凸塊電極2b及配 25 201221606 ^5/^ypif 線圖案1 b彼此經由導電粒子5而電性連接。亦即,導電粒 子5與凸塊電極2b及配線圖案lb均直接發生接觸,藉此 來將凸塊電極2b及配線圖案lb予以電性連接。 對於電路連接構造體100而言,由於藉由電路連接用 接著膜10的固化物6a及固化物6b來將基板1與半導體元 件2予以接合,因此,即便當電路構件的厚度薄(〇 3 mm 以下)時,亦可充分地抑制基板1的紐曲,且可獲得優異 的連接可靠性。 如上所述的電路連接構造體1〇〇可經由如下的步驟來 製造。亦即,可藉由如下的製造方法來製造上述電路連接 構造體100,該製造方法包括如下的步驟:使本實施形態 的電路連接用接著膜介於一對電路構件之間而獲得積層 體,δ玄一對電路構件包括在厚度為〇 3 mm以下的玻璃基 板la (第1電路基板)的主面上形成有配線圖案(第i 電路電極)的基板1 (第1電路構件)、及在厚度為〇3mm 以下的1C晶片2a (第2電路基板)的主面上形成有凸塊 電極2b(第2電路電極)的半導體元件2(第2電路構件); 以及對積層體進行加熱及加壓而使電路連接用接著膜固 化’藉此來形成連接部,該連接部介於一對電路構件之間, 且以使相對向地配置的配線圖案lb (第丨電路電極).與凸 塊電極2b (第2電路電極)電性連接的方式,將一對電路 構件彼此予以接著。 &lt;電路構件的連接方法&gt; 藉由如下的方法來獲得電路連接構造體1〇〇,即,於S 24 201221606t Pressure, the circuit electrodes disposed opposite to each other are electrically connected to each other by one of contact and direct contact via conductive particles or two kinds of contacts. &lt;Circuit Connection Structure&gt; FIG. 2 is a schematic cross-sectional view showing a laminated body 200 in which the circuit-connecting bonding film 10 of the present embodiment is inserted between the substrate 1 and the semiconductor element 2, which are a pair of circuit members, and FIG. The schematic cross-sectional view of the circuit-connecting structure 100 of the present embodiment obtained by heating and pressurizing the laminated body 2A shown in Fig. 2 is shown. The circuit connection structure 100 shown in FIG. 3 includes a substrate 1 (an i-th circuit member) in which a wiring pattern lb (first circuit electrode) is formed on a main surface of a glass substrate u (first circuit substrate), A semiconductor element 2 (second circuit member) in which a bump electrode 2b (second circuit electrode) is formed on a main surface of a chip 2a (second circuit board) of an integrated circuit (1C) And a cured product 6a and a cured product 6b (connecting portion) of the bonding film 1〇 between the substrate 丨 and the semiconductor element 2. In the circuit connection structure 1A, the wiring patterning and the bump electrodes 2b are electrically connected in a state of being disposed opposite to each other. Here, the wiring pattern 1b is preferably formed of a transparent conductive material. Typically, § 'Indium Tin Oxide (ITO) is used as the transparent conductive material. Further, the bump electrode 2b is formed of a conductive material (preferably at least one selected from the group consisting of gold, silver, tin, a metal which is turned over, and ITO) which has a function as an electrode. In the circuit connection structure 100, the opposing bump electrodes 2b and the 25 201221606 ^5/^ypif line patterns 1b are electrically connected to each other via the conductive particles 5. That is, the conductive particles 5 are in direct contact with the bump electrodes 2b and the wiring pattern lb, whereby the bump electrodes 2b and the wiring patterns 1b are electrically connected. In the circuit connection structure 100, since the substrate 1 and the semiconductor element 2 are bonded by the cured product 6a and the cured product 6b of the bonding film 10 for circuit connection, even when the thickness of the circuit member is thin (〇3 mm In the case of the following), the click of the substrate 1 can be sufficiently suppressed, and excellent connection reliability can be obtained. The circuit connection structure 1 as described above can be manufactured through the following steps. In other words, the circuit connecting structure 100 can be manufactured by the following manufacturing method, and the manufacturing method includes the steps of: forming a laminated body between the pair of circuit members by the bonding film for circuit connection according to the embodiment; The δ pair of circuit members includes a substrate 1 (first circuit member) in which a wiring pattern (i-th circuit electrode) is formed on a main surface of a glass substrate 1a (first circuit board) having a thickness of 〇3 mm or less, and a semiconductor element 2 (second circuit member) having a bump electrode 2b (second circuit electrode) formed on a main surface of a 1C wafer 2a (second circuit board) having a thickness of 〇3 mm or less; and heating and adding of the laminated body Pressing to cure the circuit connection with the adhesive film' thereby forming a connection portion between the pair of circuit members, and the wiring pattern lb (the second circuit electrode) and the bumps disposed oppositely The pair of circuit members are connected to each other in such a manner that the electrodes 2b (second circuit electrodes) are electrically connected. &lt;Connection method of circuit member&gt; The circuit connection structure 1 is obtained by the following method, that is,

26 S 201221606 jo /jypli 使配線圖案lb及凸塊電極2b相對向地配置的狀態下,對 在玻璃基板la的主面上形成有配線圖案lb的基板丨、在 1C晶片2a的主面上形成有凸塊電極2b的半導體元件2、 以及介於基板1及半導體元件2之間的電路連接用接著膜 10進行加熱及加壓’將配線圖案lb及凸塊電極2b予以電 性連接。 上述方法可準備以如下的方式形成的積層體2〇〇, 即,在將形成於剝離性基材上的電路連接用接著膜1〇貼人 於基板1上的狀態下進行加熱及加壓,對電路連接用接二 膜10進行臨時壓接,將剝離性基材予以剝離,接著一面= 準電路電極…面將半導體科2放置於該電路電極,铁 後進行加熱及加壓,基板1、電路連接用接著膜1〇及^ 體元件2依序積層》 、 干等 —根據電路連接用接著*10 +的接著劑組成物知 著劑組成物4b的©化性等’適#地㈣對上麵層體· 進行力:献加壓的條件,使得電路連接祕著膜i。固化之 後獲彳寸充分的接著強度。 根據使用有本實施形態的電路連 :的即便當電路構件的厚度薄(== 亦可抑制電路構件_曲,的獲得良好的連接可靠 [實例] 發明進行說明。然而 以下’列舉實例來更具體地對本 本發明並不限定於這些實例。 27 201221606 (1)電路連接用接著膜的準備 莫,如7所述’準備用以製作導電性接著劑層及絕緣性接 =層的各材料。又,稱量出約1〇mg的各個成膜材料, 用TA Instruments公司製造的DSC裝置(產品名:Q1〇〇〇 ) 依據JIS K7121-1987的規定來對成膜材料的Tg進行測 定。 (a)成分:Tg為4(TC〜70t:的成膜材料 + 「Fx_316」(東都化成(Tohto Kasei)製造,產品名): 笨氧基樹脂(Tg : 66。(:) 「UR-4125」(東洋紡製造,產品名):聚酯胺基曱酸 酯(Tg : 68〇C) 「UR-1350」(東洋紡製造,產品名):聚酯胺基曱酸 酯(Tg : 46Ϊ ) 「3000-K」(電氣化學工業製造’產品名):聚乙烯丁 醛(Tg : 64。(:) (a),成分:(a)成分以外的成膜材料 「UR_8300」(東洋紡製造,產品名广聚酯胺基曱酸 酯(Tg : 23。。) 「ZX-1356-2」(東都化成製造’產品名):苯氧基樹脂 (Tg : 75。。) 「PKHC」(InChem製造,產品名):苯氧基樹脂(Tg : 89〇C ) 「5000-D」(電氣化學工業製造,產品名):聚乙烯丁 醛(Tg : 110°C )26 S 201221606 jo /jypli The substrate 丨 in which the wiring pattern lb is formed on the main surface of the glass substrate 1a and the main surface of the 1C wafer 2a are formed in a state in which the wiring pattern 1b and the bump electrode 2b are opposed to each other. The semiconductor element 2 having the bump electrode 2b and the bonding film 10 for interposing between the substrate 1 and the semiconductor element 2 are heated and pressurized, and the wiring pattern 1b and the bump electrode 2b are electrically connected. In the above method, the laminate 2 is formed in such a manner that the bonding and bonding film 1 形成 formed on the peelable substrate is attached to the substrate 1 and heated and pressurized. The second film 10 for circuit connection is temporarily pressure-bonded to peel off the peelable substrate, and then the semiconductor substrate 2 is placed on the circuit electrode, and the iron is heated and pressurized. For the circuit connection, the bonding film 1 and the device 2 are sequentially laminated, dried, etc. - the adhesion of the composition 4b according to the circuit composition is followed by the *10 + adhesive composition, etc. Upper layer · Carrying out force: The condition of pressurization makes the circuit connect to the secret film i. After curing, the full strength of the bond is obtained. According to the use of the circuit of the present embodiment, even when the thickness of the circuit member is thin (== the circuit member can be suppressed, the good connection is reliably obtained [example] The invention will be described. However, the following examples are more specific. The present invention is not limited to these examples. 27 201221606 (1) Preparation of an adhesive film for circuit connection, as described in 7 'Prepare each material for forming a conductive adhesive layer and an insulating connection layer. Each film-forming material of about 1 μg was weighed, and the Tg of the film-forming material was measured by a DSC apparatus (product name: Q1〇〇〇) manufactured by TA Instruments, Inc. in accordance with the regulations of JIS K7121-1987. ) Component: Tg is 4 (TC~70t: film-forming material + "Fx_316" (manufactured by Tohto Kasei, product name): Styrene resin (Tg: 66. (:) "UR-4125" ( Toyobo Co., Ltd., product name): Polyesteramine phthalate (Tg: 68〇C) "UR-1350" (manufactured by Toyobo, product name): Polyester phthalate (Tg: 46Ϊ) "3000-K (Electric chemical industry manufacturing 'product name'): polyvinyl butyral (Tg : 64. (:) (a), Component: Film-forming material "UR_8300" other than the component (a) (manufactured by Toyobo Co., Ltd., product name: Polyesteramine phthalate (Tg: 23%)."ZX-1356- 2" (Dongdu Chemical Manufacturing's product name): phenoxy resin (Tg: 75.) "PKHC" (manufactured by InChem, product name): phenoxy resin (Tg: 89〇C) "5000-D" ( Electrochemical industry manufacturing, product name): polyvinyl butyral (Tg: 110 ° C)

28 S 201221606 JO / 「YP-50」(東都化成製造,產品名):苯氧基樹脂 (Tg : 97〇C ) (b) 成分:環氧樹脂 「850-S」(DIC製造,產品名):雙酚A型環氧樹脂 (c) :潛伏性固化劑 「Novacure」(旭化成化學(Asahi Kasei Chemicals) 製造,產品名) (d) :絕緣性粒子 「X-52-7030」(信越矽利光(Shin-Etsu Slicone)製 造,產品名):聚矽氧錯合物(聚矽氧橡膠及聚矽氧樹脂的 錯合物) (導電粒子) 「Micropearl AU」(積水化學製造,產品名) (添加劑) 「SH6040」(東麗道康寧(Toray Dow Corning)製造, 產品名).碎烧偶合劑 (實例1) &lt;導電性接著劑層&gt; 將10質量份的苯氧基樹脂「FX-316」、30質量份的雙 酚A型環氧樹脂「850-S」、40質量份的潛伏性固化劑 「Novacure」及1質量份的矽烷偶合劑「Sh6040」溶解於 1〇〇質量份的曱苯之後,添加19質量份的導電粒子 「MicropearlAU」’調製出導電性接著劑層形成用塗佈液。 使用塗佈裝置((股)康井精機公司製造,產品名:精 29 201221606 密塗佈機)來將上述塗佈液塗佈於單面(塗佈有塗佈液的 面)已被施以脫模處理(中_處理)的厚度為50师的 PET膜,以7(rc來進行1〇分鐘的熱風乾燥藉此,於四τ 膜上形成厚度為ίο μιη的導電性接著劑層。 &lt;絕緣性接著劑層&gt; 將52質量份的苯氧基樹脂「FX-316」、26質量份的螯 ,Α型環氧樹脂r85〇_s」、18質量份的潛伏性固化劑 ovacure」及j質量份的矽烷偶合劑「sh6〇4〇」溶 =4=作為溶劑的甲苯之後,添加3質量份的聚石夕 =粒子X-52-7030」,調製出絕緣性接著劑層形成用塗 土,上述同樣地,使用塗佈裝置((股)康井精機公司製28 S 201221606 JO / "YP-50" (manufactured by Tohto Kasei Co., Ltd., product name): phenoxy resin (Tg: 97〇C) (b) Ingredients: Epoxy resin "850-S" (manufactured by DIC, product name) : Bisphenol A type epoxy resin (c): latent curing agent "Novacure" (made by Asahi Kasei Chemicals, product name) (d) : Insulating particle "X-52-7030" (Shin-Etsu Shinwa (Manufactured by Shin-Etsu Slicone), product name): Polyoxane complex (a complex of polyoxyxene rubber and polyoxyl resin) (conductive particles) "Micropearl AU" (made by Sekisui Chemical Co., Ltd.) Additives "SH6040" (manufactured by Toray Dow Corning, product name). Broken coupling agent (Example 1) &lt;Electrically conductive adhesive layer&gt; 10 parts by mass of phenoxy resin "FX-316" 30 parts by mass of bisphenol A type epoxy resin "850-S", 40 parts by mass of latent curing agent "Novacure", and 1 part by mass of decane coupling agent "Sh6040" dissolved in 1 part by mass of hydrazine After benzene, 19 parts by mass of conductive particles "MicropearlAU" was added to prepare a conductive adhesive. Forming a coating liquid. Applying the above coating liquid to one side (surface coated with the coating liquid) has been applied by using a coating device (manufactured by Kane Seiki Co., Ltd., product name: Fine 29 201221606) The release film (medium-treatment) was a PET film of 50 divisions, and was dried by hot air at 7 (rc for 1 minute) to form a conductive adhesive layer having a thickness of ίο μιη on the tetra-τ film. Insulating adhesive layer> 52 parts by mass of phenoxy resin "FX-316", 26 parts by mass of chelate, fluorene type epoxy resin r85〇_s", and 18 parts by mass of latent curing agent ovacure" And j parts by mass of the decane coupling agent "sh6〇4〇" dissolved = 4 = toluene as a solvent, and then added in an amount of 3 parts by mass of Juxi Xi = particle X-52-7030" to prepare an insulating adhesive layer. In the same manner as above, a coating device (manufactured by Kangjing Seiki Co., Ltd.) was used.

2施以:^精密塗佈機)來將上述塗佈液塗佈於單面已 ,^脫模處理的厚度為5〇卿的财膜,以7〇。。來 订10分鐘的熱風乾燥,藉此,於PE 的絕緣性接著劑層。 办糾度為15卿 &lt;電路連接用接著膜&gt; 緣性:述所獲得的導電性接著劑層與絕 —or)it二加熱:—面利用輥層壓機一-接著膜。 仃層壓’獲付厚度為25 μιη的電路連接用 (貫例2〜實例6及比較例1〜比較例5) 製出配比例(質量份)來添加各成分,調 同樣地進形成用塗佈液,除此以外,與實例1 也進订#作來製作電路連接用接著膜。2: The precision coating machine was applied to apply the above coating liquid to one side, and the thickness of the mold release treatment was 5 〇 的, which was 7 〇. . Customize the hot air drying for 10 minutes, thereby applying an insulating adhesive layer to the PE. The correction is 15 qing &lt;film for connecting the film&gt; rim: the obtained conductive adhesive layer and the absolute-or)it heating: the surface is laminated by a roll laminator.仃Laminating' is used for circuit connection with a thickness of 25 μm (Example 2 to Example 6 and Comparative Example 1 to Comparative Example 5) to prepare a ratio (parts by mass) to add each component, and to adjust the composition to be similarly In addition to the cloth liquid, in addition to Example 1, the film was bonded to make an adhesive film for circuit connection.

S 30 201221606 [表2] 成分 - !劑層 比較例 — 絕緣性接著· 劑層 1 2 3 _4~ 3 _ 6 1 2 3 4 5 (a) FX-316 10 30 50' • 52 UR-4125 UR-13 50 - - 30 30 —1 --------- (a)’ 3000-K UR-8300 - - • • - 30 in ---- ZX-1356-2 1 - - - - - • 30 • — PKHC _ - - - - 30 . 5000-D - _ - - • 30 • 1 YP-50 - - - - - • 鲁 30 - '— (b) 850-S M) 20 10 20 20 20 20 ?.n 20 20 20 26 (c) Novacure 40 30 20 30 30 30 30 30 30 30 30 ΪΓ (d) X-52-7030 - - - . 響 3- Micropearl AU 19 19 19 19 19一 19 1&lt;) 10 19 19 19 ----- SH6040 1 1 1 1 1 1 1 1 1 1 1 卜 1- (2)電路連接構造體的製作 &lt;基板及半導體元件的準備&gt; 準備於玻璃基板(康寧(C〇rning) #1737,38 mmx28 mm’厚度為 0.3 mm)的表面形成有 IT〇( Indiuin Tin Oxide) 的配線圖案(圖案寬度為50 μιη,電極之間的空間為5 μηι) 的基板。準備1C晶片(外形為17 mmxl7 mm,厚度為0.3 mm,凸塊的大小為50 μιη&gt;&lt;50 μιη,凸塊之間的空間為50 μηι ’凸塊高度為15 μιη)作為半導體元件。 &lt;基板及半導體元件的連接&gt; 使用上述實例及比較例中所製作的電路連接用接著 膜’以如下所示的方式來將1C晶片與玻璃基板予以連接。 再者’將由包含陶曼加熱器(ceramic heater)的平台(stage) 31 201221606 ^ ^^ wir (150 mmxl50 mm)及工且 h 、 壓接件用於連接。 〃(3_x2〇mm)構成的加熱 ^先,將電路連接用接著和5·χ2。 ==層上的ΡΕΤ»予以制離,於8〇t,m〇 in 進行2㈣加熱及祕,藉此來將導電 2者劑層面_於玻璃基板。接著,將電 =絕緣性接著劑層上的PET膜予以剝離,使IC 古=玻縣板對準之後’於電路連制接著朗實測最 :條d赋及凸塊電極面積換算壓力為7〇 MPa 緣::著晶片上方進行10秒的加熱及加壓,將絕 阳片與破縣板進行主連I 轉膜不對 (3)評價 (成膜性) 膜性接用接著膜的成 心且^者可形成為膜」,是指已製作的 表中不易碎裂、不易黏連。將成膜性的評價結果 A:可形成膜 B:無法形成膜 (翹曲) 圖4是表示玻璃基板的翹曲的評價方法的模 二:圖4所示的電路連接構造體1〇〇是由基板i、半^ 以2及將基板1與半導體元件2予以接合的已固化的電S 30 201221606 [Table 2] Ingredients - ! Agent layer comparison example - Insulation followed by agent layer 1 2 3 _4~ 3 _ 6 1 2 3 4 5 (a) FX-316 10 30 50' • 52 UR-4125 UR -13 50 - - 30 30 —1 --------- (a)' 3000-K UR-8300 - - • • - 30 in ---- ZX-1356-2 1 - - - - - • 30 • — PKHC _ - - - - 30 . 5000-D - _ - - • 30 • 1 YP-50 - - - - - • Lu 30 - '- (b) 850-SM) 20 10 20 20 20 20 ?.n 20 20 20 26 (c) Novacure 40 30 20 30 30 30 30 30 30 30 30 ΪΓ (d) X-52-7030 - - - . 3 - Micropearl AU 19 19 19 19 19 - 19 1 &lt;) 10 19 19 19 ----- SH6040 1 1 1 1 1 1 1 1 1 1 1 Bu 1 - (2) Fabrication of circuit-connected structure &lt;Preparation of substrate and semiconductor device&gt; Prepared on glass substrate (Corning ( C〇rning) #1737, 38 mm x 28 mm '0.3 mm thick) The surface of the substrate was formed with an IT (Indiuin Tin Oxide) wiring pattern (pattern width 50 μm, space between electrodes 5 μηι). A 1C wafer (having a shape of 17 mm x 17 mm, a thickness of 0.3 mm, a bump size of 50 μm &gt;&lt; 50 μm, a space between bumps of 50 μηι ‘bump height of 15 μm) was prepared as a semiconductor element. &lt;Connection of Substrate and Semiconductor Element&gt; The 1C wafer and the glass substrate were connected as follows using the bonding film for circuit connection manufactured in the above examples and comparative examples. Furthermore, a stage 31 including a ceramic heater, 201221606 ^ ^^ wir (150 mm x 150 mm), and a crimping member are used for connection. Heating by 〃(3_x2〇mm) ^ First, connect the circuit with 5·χ2. == 层 on the layer is to be separated, at 8 〇t, m〇 in 2 (four) heating and secret, in order to make the conductive layer _ on the glass substrate. Next, the PET film on the electrical-insulating adhesive layer is peeled off, and the IC is replaced by the glass plate. After the circuit is connected, the measured voltage is the highest: the strip d is given the bump electrode area conversion pressure of 7〇. MPa edge:: 10 seconds of heating and pressurization on the top of the wafer, the main film is connected to the broken plate and the film is not connected. (3) Evaluation (film formation) The film is used to form the core of the film and The film can be formed into a film, which means that the prepared watch is not easily broken and is not easily adhered. Evaluation result of film formation property A: Formable film B: Film formation (warpage) was not formed. Fig. 4 is a mode 2 showing a method of evaluating warpage of a glass substrate: the circuit connection structure 1 shown in Fig. 4 is The cured electricity is bonded by the substrate i, the half 2, and the substrate 1 and the semiconductor element 2

S 32 201221606. ^pif 路連接用接著膜10構成{表示當將 2板!的下表面的高度設為。•,直::: 的中心相隔U.Smm處為止的基板 表=2 為指標來_曲進行評價 、。&quot; L的值不足15帅的情形設為「A」,將 上的情形設為「b」,以兩個階段來進行 。將翹曲的評價結果表示於表2中。S 32 201221606. The pif road connecting adhesive film 10 is constructed {indicating that the height of the lower surface of the two sheets! is set. • The base of the straight::: is separated from the center of the U.Smm. Table = 2 is evaluated for the index. &quot; The value of L is less than 15 and the situation is set to "A", and the case of "L" is set to "b", which is performed in two stages. The evaluation results of the warpage are shown in Table 2.

曰二ΐ電路連接構造體的製作過程中的玻璃基板及1C 日门日1 別自G·3咖變更至G.5 _,按照與上述相 ,的順序,使用上述實例及比較例所製作的電路連接用接 者膜來進行連接,製作接合體。對所獲得的接合體的龜曲 進行評價之後,接合體的翹曲均不足15 μπι。 (連接可靠性) “使用已製作的電路連接構造體來對玻璃基板的電路與 半導體元件的電極之間的電阻值進行測定。使用萬用電錶 (multimeter)(裝置名:MLR2:l,ETAC公司製造),於溫 度為85C,濕度為85%RH的1〇〇〇小時的熱濕度測試The glass substrate and 1C day gate 1 in the process of manufacturing the circuit connection structure were changed from G.3 coffee to G.5 _, and the above examples and comparative examples were used in the order of the above-mentioned phase. The circuit is connected by a contact film to form a bonded body. After the tortuosity of the obtained joined body was evaluated, the warpage of the joined body was less than 15 μm. (Connection reliability) "The resistance value between the circuit of the glass substrate and the electrode of the semiconductor element was measured using the fabricated circuit connection structure. A multimeter was used (device name: MLR2:1, ETAC) Manufactured), 1 hour heat and humidity test at a temperature of 85 C and a humidity of 85% RH

(Thermal Humidity Test ’ THT)之後進行測定。基於 thT 測試之後的電阻值且依據以下的基準,以A或b該兩個階 段來對連接可靠性進行評價。將各電路連接構造體的測定 結果表示於表3中。 A :不足10 Ω B : 10 Ω以上 33 201221606 [表3]The measurement was performed after (Thermal Humidity Test 'THT). Based on the resistance values after the thT test and based on the following criteria, the connection reliability was evaluated in two stages of A or b. The measurement results of the respective circuit connection structures are shown in Table 3. A : Less than 10 Ω B : 10 Ω or more 33 201221606 [Table 3]

本發明的電路連接用接著膜即便當用於將厚度薄 路構件彼辭以連接時,成膜性、㈣及連接可靠性均表 現出優異的特性。 衣 —雖本發明已以較佳實施例揭露如上,然其並非用以 限^本發明,任何熟習此技藝者,在不脫離本發明之精神 =範圍内’ §可作些許之更動與潤_,因此本發明之保護 範圍當視_之申請專職圍所界定者鱗。 ° 【圖式簡單說明】 圖1是表示本發明的一個實施形態的電路連接用接著 膜的模式剖面圖。 圖2是表示於一對電路構件之間插入有本實施形態的 電路連接賴著臈的積層體賴式剖面圖。 圖3是表示本實施形態的電路連接構造體的模式剖面 圖0The adhesive film for circuit connection of the present invention exhibits excellent characteristics such as film formability, (4), and connection reliability even when used for connecting thin film members. The present invention has been disclosed in the above preferred embodiments, and is not intended to limit the invention, and any skilled person can make a few changes and simplifications without departing from the spirit of the invention. Therefore, the scope of protection of the present invention is defined as the scale defined by the application for full-time employment. [Brief Description of the Drawings] Fig. 1 is a schematic cross-sectional view showing a bonding film for circuit connection according to an embodiment of the present invention. Fig. 2 is a cross-sectional view showing a laminated body in which a circuit connection of the present embodiment is inserted between a pair of circuit members. Fig. 3 is a schematic cross-sectional view showing the circuit connection structure of the embodiment;

S 34 201221606 圖4是表示玻璃基板的翹曲的評價方法的模式剖面 5 ° 【主要元件符號說明】 1 :基板 1 a ·玻璃基板 lb :配線圖案 2:半導體元件 2a : 1C晶片 2b :凸塊電極 3a :絕緣性接著劑層 3b :導電性接著劑層 4a、4b :接著劑組成物 5:導電粒子 6a、6b :固化物 10 :電路連接用接著膜 100 :電路連接構造體 200 :積層體 L:高度的最大值 35S 34 201221606 FIG. 4 is a schematic cross-sectional view showing a method of evaluating warpage of a glass substrate of 5 ° [Description of main components] 1 : substrate 1 a · glass substrate lb : wiring pattern 2 : semiconductor element 2a : 1C wafer 2b : bump Electrode 3a: Insulating adhesive layer 3b: Conductive adhesive layer 4a, 4b: Adhesive composition 5: Conductive particles 6a, 6b: Cured material 10: Circuit connection connecting film 100: Circuit connection structure 200: Laminated body L: the maximum value of height 35

Claims (1)

201221606; 申請專利範圍: 1.種電路連接用接著膜,包括: 及 導電I1 生接著劑層,含有接著劑組成物及導電粒子;以 子 緣丨生接著劑層,含有接著劑組成物且不含有導電粒 性接著劑層中所含有的接著劑組成物包含 _轉移溫度為啊〜机的成 樹脂及(C)潛伏性固化劑, 〗V ;錢 電路接著膜用於在使第1電路電極及第2 ==路基板的主面上形成有上述第=: j第2電路構件在厚度為〇 3 == 的主面上形成有上述第2電路電&amp; 料2電路基板 其中2卜3請專利範圍第1項所述之電路連接用接著腹 心㈣.辑 =Γ+ 3. —種電路連接構造體,包括: 第1電路構件,在厚声 板的主面上形成有第心:一下的第1電路基 第2電路構件,在厚 板的主面上形成有第2電路電極 =2電路基 置—電極相對向 S 36 201221606 述第i電路電極電性連接;以及 之間連接部’介於上述第】電路構件與上述第2電路構件 上述連接部為如申請專利範圍第i項或第 電路連接用接著膜的固化物。 ’*· 驟:4. -種電路連接構造體的製造方法,包括如下的步 接著所述之電路連接用 路構件包括第*電路構件與;2 體上二:電 有第以下的第1電路基板的主面上形成 第2電路電極;以及 著膜固行加熱及加壓而使上述電路連接用接 電路構件之間,且以使相對 $接心於上述一對 與上述第2電路雪炻蕾^ * 配置的上述第1電路電極 件彼此予以接著 接的方式,將上述一對電路構 5· —種電路構件的連接方法,包括. 態下2電路電極相對向地配置的狀 1電路構件及上述第2電路及配置於上述第 上述第!電路電極與上述第加熱及加麼,將 电峪電極予以電性連接,其 37 201221606 板的主度為。·3 mm以下的第1電路基 在厚度為as i有電路電極’上述第2電路構件 述第2電路電極。的4 2電路基板的主面上形成有上 6.- 括 〖接著膜的用於電路連接的使用,上述接著膜包 及 導電性接著劑層,含有接著劑組成物及導電粒子;以 子 絕緣性接著劑層,含有接著劑組成物且不含有導電粒 電性接著劑層中所含有的接著劑組成物包含 $ «轉移溫度為听〜7Q。⑽細材料 樹月曰及(c)潛伏性固化劑, 衣虱 ㈣著膜的用於電路連接的使用是在使第1電路電 r==r的狀態下,將第1電路構件與ί 1電連接’其中上述第1電路構件在厚度 以下的第1電路基板的主面上形成有上述第i 電路電極,上述第2電路構件在厚度為〇3麵以下的第2 電路基板的絲上形成有±述第2電路電極。 7·如申請專觀圍第6項所述之接著膜的用於電路 連接的㈣’其t上述導電性接著_及/或上述絕緣 著劑層更含有(d)絕緣性粒子。 接 S 38201221606; Patent application scope: 1. An adhesive film for circuit connection, comprising: and a conductive I1 raw adhesive layer containing an adhesive composition and conductive particles; a primer layer with a daughter edge, containing an adhesive composition and not The adhesive composition contained in the conductive granular adhesive layer contains a _ transfer temperature of a resin and (C) a latent curing agent, and a V circuit is used for the first circuit electrode. And the second == j second circuit member is formed on the main surface of the second == path substrate, and the second circuit electric &amp; material 2 circuit substrate is formed on the main surface having a thickness of 〇3 == Please connect the circuit as described in the first item of the patent range to the belly center (4). Edit = Γ + 3. The circuit connection structure includes: the first circuit member, the first center is formed on the main surface of the thick sound board: The first circuit-based second circuit member has a second circuit electrode formed on the main surface of the thick plate=2 circuit base-electrode is electrically connected to the ith circuit electrode of S 36 201221606; and the connection portion between Between the above] circuit components and The second circuit member is a cured product of the film of the first aspect of the invention or the film for connection of the circuit. '*· Step: 4. A method of manufacturing a circuit-connecting structure, comprising the following steps: the circuit connecting path member includes a *th circuit member and the second body; the second body: the first first circuit a second circuit electrode is formed on the main surface of the substrate; and the circuit is fixedly heated and pressurized to connect the circuit connecting circuit members, so that the pair is connected to the pair of the second circuit and the second circuit. a method of connecting the pair of circuit components and the circuit member, wherein the first circuit electrode members are arranged next to each other, and the circuit member is disposed in a state in which the second circuit electrodes are opposed to each other. And the second circuit and the second circuit described above; The circuit electrode and the above heating and addition, the electric electrode is electrically connected, and the main degree of the 37 201221606 plate is . The first circuit base of 3 mm or less has a circuit electrode having a thickness of i, and the second circuit component of the second circuit component is described above. The main surface of the 4 2 circuit board is formed with the upper 6.- including the use of the film for the connection of the film, the adhesive film and the conductive adhesive layer, the adhesive composition and the conductive particles; The adhesive layer containing the adhesive composition and containing no conductive particles. The adhesive composition contained in the electrical adhesive layer contains $« transition temperature for listening ~7Q. (10) Thin material tree 曰 and (c) latent curing agent, 虱 (4) filming for circuit connection is used in the state where the first circuit is electrically r == r, the first circuit member and ί 1 The first circuit component is formed on the main surface of the first circuit board having a thickness equal to or less than the thickness of the first circuit board, and the second circuit member is formed on the wire of the second circuit board having a thickness of 〇3 or less. There are ± second circuit electrodes. 7. If the above-mentioned conductive film is applied to the adhesive film according to item 6 of the above-mentioned item 6, the above-mentioned conductivity is further _ and/or the insulating layer further contains (d) insulating particles. Connected to S 38
TW100120190A 2010-06-14 2011-06-09 Adhesion film for connecting circuit and usage thereof, circuit connection structure and manufacturing method thereof, and connecting method of circuit member TWI452103B (en)

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