JP6237855B2 - Adhesive film, circuit member connection structure, and circuit member connection method - Google Patents

Adhesive film, circuit member connection structure, and circuit member connection method Download PDF

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Publication number
JP6237855B2
JP6237855B2 JP2016203631A JP2016203631A JP6237855B2 JP 6237855 B2 JP6237855 B2 JP 6237855B2 JP 2016203631 A JP2016203631 A JP 2016203631A JP 2016203631 A JP2016203631 A JP 2016203631A JP 6237855 B2 JP6237855 B2 JP 6237855B2
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JP
Japan
Prior art keywords
adhesive layer
connection terminal
adhesive film
connection
bisphenol
Prior art date
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Application number
JP2016203631A
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Japanese (ja)
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JP2017020047A (en
Inventor
克彦 富坂
克彦 富坂
潤 竹田津
潤 竹田津
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
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Publication of JP2017020047A publication Critical patent/JP2017020047A/en
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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J171/00—Adhesives based on polyethers obtained by reactions forming an ether link in the main chain; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/04—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/302—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
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    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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Description

本発明は、接着フィルム、並びに回路部材の接続構造及び接続方法に関する。   The present invention relates to an adhesive film, a circuit member connection structure, and a connection method.

液晶表示用ガラスパネルへは、ＣＯＧ(Chip-On-Glass)実装やＣＯＦ(Chip-On-Flex)実装等によって液晶駆動用ＩＣが実装される。ＣＯＧ実装では、導電粒子を含む接着フィルムを用いて液晶駆動用ＩＣを直接ガラスパネル上に接合する。ＣＯＦ実装では、金属配線を有するフレキシブルテープに液晶駆動用ＩＣを接合し、導電粒子を含む接着フィルムを用いてそれらをガラスパネルに接合する。   A liquid crystal driving IC is mounted on the liquid crystal display glass panel by COG (Chip-On-Glass) mounting, COF (Chip-On-Flex) mounting, or the like. In COG mounting, a liquid crystal driving IC is directly bonded onto a glass panel using an adhesive film containing conductive particles. In COF mounting, a liquid crystal driving IC is bonded to a flexible tape having metal wiring, and these are bonded to a glass panel using an adhesive film containing conductive particles.

これに対して、近年の液晶表示の高精細化に伴い、液晶駆動用ＩＣの電極である金バンプは狭ピッチ化、狭面積化している。このため、従来の接着フィルムでは、回路接続部材中の導電粒子が隣接電極（接続端子）間に流出し、ショートを発生させる等といった問題があった。また、ショートを避けるために接着フィルム中の導電粒子の数を減らした場合には、バンプ／パネル間に捕捉される接着フィルム中の導電粒子の数が減少し、その結果、回路間の接続抵抗が上昇し接続不良を起こすといった問題があった。   On the other hand, with the recent high definition of the liquid crystal display, the gold bumps which are the electrodes of the liquid crystal driving IC are narrowed in pitch and area. For this reason, in the conventional adhesive film, there existed a problem that the electrically-conductive particle in a circuit connection member flows out between adjacent electrodes (connection terminal), and a short circuit etc. generate | occur | produced. In addition, when the number of conductive particles in the adhesive film is reduced in order to avoid short circuit, the number of conductive particles in the adhesive film trapped between the bumps / panels is reduced, resulting in a connection resistance between circuits. As a result, there was a problem that the connection was raised and poor connection was caused.

そこで、これらの問題を解決する方法として、接着フィルムの少なくとも片面に絶縁性接着層を形成することで、ＣＯＧ実装又はＣＯＦ実装における接合品質の低下を防ぐ方法（例えば、特許文献１参照）や、接着フィルムの加熱加圧時の流動性を制御することでバンプ／パネル間に捕捉される導電粒子の数を確保する方法（例えば、特許文献２参照）が開発されている。   Therefore, as a method for solving these problems, by forming an insulating adhesive layer on at least one surface of the adhesive film, a method for preventing deterioration in bonding quality in COG mounting or COF mounting (for example, see Patent Document 1), A method of ensuring the number of conductive particles captured between bumps / panels by controlling the fluidity of the adhesive film during heating and pressurization (see, for example, Patent Document 2) has been developed.

特開平８−２７９３７１号公報JP-A-8-279371 特開２００２−２０１４５０号公報JP 2002-201450 A

しかしながら、接着フィルムの片面に絶縁性接着層を形成する方法では、バンプ面積が小さい、例えば３０００μｍ２未満であるときに、安定した接続抵抗を得るために導電粒子の数を増やす場合には、隣り合う回路電極間の絶縁性について未だ改良の余地がある。また、接着フィルムの加熱加圧時の流動性を制御する方法では、液晶表示用ガラスパネルへの液晶駆動用ＩＣの実装時に、加熱加圧後の接着フィルムの硬化物の貯蔵弾性率が高くなることにより生じ得るパネル反りを防止する点で、未だ改良の余地が残されていた。 However, in the method of forming an insulating adhesive layer on one side of the adhesive film, when the number of conductive particles is increased in order to obtain a stable connection resistance when the bump area is small, for example, less than 3000 μm 2 , There is still room for improvement in insulation between mating circuit electrodes. In addition, in the method of controlling the fluidity of the adhesive film during heating and pressing, the storage elastic modulus of the cured product of the adhesive film after heating and pressing is increased when the liquid crystal driving IC is mounted on the liquid crystal display glass panel. However, there is still room for improvement in terms of preventing panel warpage that may occur.

そこで、本発明は上記事情を鑑みてなされたものであり、ＣＯＧ実装やＣＯＦ実装に対して低抵抗の電気接続が得られ、且つ液晶表示用ガラスパネルへ液晶駆動用ＩＣを実装した後のパネル反りが十分に防止される接着フィルム、並びにそれを用いた、回路部材の接続方法及び接続構造を提供することを目的とする。   Accordingly, the present invention has been made in view of the above circumstances, and a panel obtained by mounting a liquid crystal driving IC on a glass panel for liquid crystal display, with which low resistance electrical connection is obtained with respect to COG mounting and COF mounting. It is an object of the present invention to provide an adhesive film in which warpage is sufficiently prevented, and a circuit member connection method and connection structure using the same.

本発明は、導電粒子を含有する導電性接着層と、絶縁性接着層とが積層されており、積層方向に所定の条件で加熱加圧した後の、硬化した絶縁性接着層の主面の面積Ｃを、硬化した導電性接着層の主面の面積Ｄで除した値Ｃ／Ｄが１．２〜３．０である接着フィルムを提供する。   In the present invention, a conductive adhesive layer containing conductive particles and an insulating adhesive layer are laminated, and the main surface of the cured insulating adhesive layer after being heated and pressed under predetermined conditions in the laminating direction. An adhesive film having a value C / D of 1.2 to 3.0 obtained by dividing the area C by the area D of the main surface of the cured conductive adhesive layer is provided.

本発明の接着フィルムによれば、ＣＯＧ実装やＣＯＦ実装に対して低抵抗の電気接続が得られ、且つ液晶表示用ガラスパネルへ液晶駆動用ＩＣを実装した後のパネル反り、及び隣接電極間でのショート発生が十分に防止される。   According to the adhesive film of the present invention, low resistance electrical connection can be obtained with respect to COG mounting and COF mounting, and the panel warpage after mounting the liquid crystal driving IC on the liquid crystal display glass panel and between adjacent electrodes The occurrence of short circuit is sufficiently prevented.

本発明の接着フィルムにより上記の目的を達成できる理由は必ずしも明らかでないが、上記Ｃ／Ｄの値が上記の範囲であることに少なくとも起因するものと考えられる。なお、Ｃ／Ｄの値は、絶縁性接着層の流動性と導電性接着層の流動性との差異を示す指標である。   The reason why the above-mentioned object can be achieved by the adhesive film of the present invention is not necessarily clear, but it is thought to be caused at least by the fact that the value of C / D is in the above range. The value of C / D is an index indicating the difference between the fluidity of the insulating adhesive layer and the fluidity of the conductive adhesive layer.

Ｃ／Ｄの値が上記数値範囲内にあることで、この値が１．２未満である場合と比較して、導電性接着層の流動性に対する絶縁性接着層の流動性が高くなる。
このような本発明の接着フィルムにおいては、加熱加圧をする際に導電性接着層よりも絶縁性接着層のほうが優先的に流動する。このため、回路接続の際には、回路基板上の回路電極同士の間の空隙に絶縁性接着層が充填されやすくなり、導電性接着剤層中の導電粒子がこの空隙中へ流入することを防ぐことができやすくなり、隣接電極間でのショート発生が十分に防止されると考えられる。
さらに、導電性接着剤層中の導電粒子が上記空隙中へ流入することが防止されれば、接続しようとする回路電極間に捕捉される導電粒子の数が多くなり、低抵抗の電気接続が得られやすくなると考えられる。
また、Ｃ／Ｄの値が上記数値範囲内にあることで、この値が３．０を超える場合と比較して、導電性接着層の流動性に対する絶縁性接着層の流動性が高くなりすぎない。これにより、回路電極同士の良好な導通特性と接着性を両立することができ、接着フィルムの高い信頼性を維持できると考えられる。 When the value of C / D is within the above numerical range, the fluidity of the insulating adhesive layer with respect to the fluidity of the conductive adhesive layer is higher than when this value is less than 1.2.
In such an adhesive film of the present invention, the insulating adhesive layer flows preferentially over the conductive adhesive layer when heating and pressurizing. For this reason, at the time of circuit connection, it becomes easy to fill the gap between the circuit electrodes on the circuit board with the insulating adhesive layer, and the conductive particles in the conductive adhesive layer flow into the gap. It can be easily prevented, and it is considered that the occurrence of a short circuit between adjacent electrodes is sufficiently prevented.
Furthermore, if the conductive particles in the conductive adhesive layer are prevented from flowing into the gap, the number of conductive particles captured between circuit electrodes to be connected increases, and a low-resistance electrical connection is achieved. It is thought that it becomes easy to obtain.
Further, since the value of C / D is within the above numerical range, the fluidity of the insulating adhesive layer relative to the fluidity of the conductive adhesive layer becomes too high as compared with the case where this value exceeds 3.0. Absent. Thereby, it is thought that the favorable electrical conduction characteristic and adhesiveness of circuit electrodes can be made compatible, and the high reliability of an adhesive film can be maintained.

なお、上記の所定の条件とは、本発明の接着フィルムを２枚のガラス板で挟んだ状態で、１６０℃、２ＭＰａで１０秒間加熱加圧する条件をいう。   In addition, said predetermined condition means the conditions which heat-press for 10 second at 160 degreeC and 2 MPa in the state which pinched | interposed the adhesive film of this invention between the two glass plates.

絶縁性接着層は、ビスフェノールＦ型フェノキシ樹脂を含有することが好ましく、導電性接着層は、ビスフェノールＡ型フェノキシ樹脂及びビスフェノールＡ・Ｆ共重合型フェノキシ樹脂からなる群より選択される少なくとも１種の樹脂を含有することが好ましい。これによれば、より高度に絶縁性接着層の流動性と導電性接着層の流動性とが制御される。   The insulating adhesive layer preferably contains a bisphenol F type phenoxy resin, and the conductive adhesive layer is at least one selected from the group consisting of a bisphenol A type phenoxy resin and a bisphenol A / F copolymer type phenoxy resin. It is preferable to contain a resin. According to this, the fluidity of the insulating adhesive layer and the fluidity of the conductive adhesive layer are more highly controlled.

本発明の接着フィルムは、相対峙する接続端子間を電気的に接続するために用いられる、上述の接着フィルムであって、４０℃、周波数１０Ｈｚにおける前記接着フィルムの硬化物の貯蔵弾性率Ｅ’が０．５〜２．５ＧＰａであることが好ましい。   The adhesive film of the present invention is the above-mentioned adhesive film used for electrically connecting the connection terminals facing each other, and the storage elastic modulus E ′ of the cured product of the adhesive film at 40 ° C. and a frequency of 10 Hz. Is preferably 0.5 to 2.5 GPa.

これによれば、接続端子を接続した後の接着フィルムの硬化物中の成分の凝集力が向上し、且つ内部応力が低減する。そのため、実装品の表示品質、接着力及び導通特性の向上といった有利な効果が得られる。貯蔵弾性率が０．５ＧＰａ未満である場合には、上述の範囲にある場合と比較して、接着フィルムの硬化物中の成分の凝集力が低く、回路部材を接続するときの接続部分の電気抵抗が上昇する傾向にある。また、貯蔵弾性率が２．５ＧＰａを超える場合には、上述の範囲にある場合と比較して、接着フィルムの硬化物の硬度が上昇し、実装品のパネル反り防止効果が低下する傾向にある。   According to this, the cohesive force of the components in the cured product of the adhesive film after connecting the connection terminals is improved, and the internal stress is reduced. Therefore, advantageous effects such as improvement in display quality, adhesive strength and conduction characteristics of the mounted product can be obtained. When the storage elastic modulus is less than 0.5 GPa, the cohesive force of the components in the cured product of the adhesive film is lower than that in the above range, and the electrical connection portion when connecting the circuit members is low. Resistance tends to increase. Further, when the storage elastic modulus exceeds 2.5 GPa, the hardness of the cured product of the adhesive film increases and the effect of preventing the panel warpage of the mounted product tends to decrease as compared with the case where the storage elastic modulus is in the above range. .

絶縁性接着層及び／又は導電性接着層は、フィルム形成材、エポキシ樹脂及び潜在性硬化剤を含むことが好ましい。これによれば、本発明による上述の効果をより確実に奏することができる。   The insulating adhesive layer and / or the conductive adhesive layer preferably contains a film forming material, an epoxy resin, and a latent curing agent. According to this, the above-mentioned effect by this invention can be show | played more reliably.

本発明はまた、導電粒子を含有する導電性接着層と、絶縁性接着層と、が積層されており、絶縁性接着層が、ビスフェノールＦ型フェノキシ樹脂を含有する接着フィルムを提供する。このような接着フィルムによれば、ＣＯＧ実装やＣＯＦ実装に対して低抵抗の電気接続が得られ、且つ液晶表示用ガラスパネルへ液晶駆動用ＩＣを実装した後のパネル反り、及び隣接電極間でのショート発生が十分に防止される。   The present invention also provides an adhesive film in which a conductive adhesive layer containing conductive particles and an insulating adhesive layer are laminated, and the insulating adhesive layer contains a bisphenol F-type phenoxy resin. According to such an adhesive film, low resistance electrical connection can be obtained with respect to COG mounting and COF mounting, and the panel warpage after mounting the liquid crystal driving IC on the liquid crystal display glass panel and between adjacent electrodes. The occurrence of short circuit is sufficiently prevented.

また、本発明は、第１の接続端子を有する第１の回路部材と、第２の接続端子を有する第２の回路部材とを、第１の接続端子と第２の接続端子とを対向して配置し、対向配置した第１の接続端子と第２の接続端子との間に接着フィルムを介在させ、加熱加圧して、第１の接続端子と第２の接続端子とを電気的に接続させてなる回路部材の接続構造であって、接着フィルムは、導電粒子を含有する導電性接着層と絶縁性接着層とを有し、加熱加圧した後の、硬化した絶縁性接着層の主面の面積Ｃを硬化した導電性接着層の主面の面積Ｄで除した値Ｃ／Ｄが１．２〜３．０である、接続構造を提供する。このような回路部材の接続構造によれば、本発明の接着フィルムを用いているため、十分に接続信頼性が高い。   In the present invention, the first circuit member having the first connection terminal and the second circuit member having the second connection terminal are opposed to each other with the first connection terminal and the second connection terminal facing each other. An adhesive film is interposed between the first connection terminal and the second connection terminal that are arranged opposite to each other, and heated and pressed to electrically connect the first connection terminal and the second connection terminal. An adhesive film has a conductive adhesive layer containing conductive particles and an insulating adhesive layer, and the main structure of the cured insulating adhesive layer after heating and pressurizing is provided. A connection structure is provided in which a value C / D obtained by dividing an area C of a surface by an area D of a main surface of a cured conductive adhesive layer is 1.2 to 3.0. According to such a circuit member connection structure, since the adhesive film of the present invention is used, the connection reliability is sufficiently high.

上述の接続構造において、第１及び第２の回路部材のうち少なくとも一方がＩＣチップであってもよい。   In the above connection structure, at least one of the first and second circuit members may be an IC chip.

上述の接続構造においては、第１及び第２の接続端子のうち少なくとも一方の表面が金、銀、錫、白金族の金属及びインジウム−錫酸化物（ＩＴＯ）からなる群より選ばれる少なくとも１種を含んでいてもよい。   In the connection structure described above, at least one of the first and second connection terminals has at least one surface selected from the group consisting of gold, silver, tin, a platinum group metal, and indium-tin oxide (ITO). May be included.

上述の接続構造においては、第１及び第２の回路部材のうち少なくとも一方の表面が、窒化シリコン、シリコーン化合物及びポリイミド樹脂からなる群より選ばれる少なくとも１種でコーティング又は付着処理されていてもよい。   In the connection structure described above, at least one surface of the first and second circuit members may be coated or adhered with at least one selected from the group consisting of silicon nitride, silicone compounds, and polyimide resins. .

本発明はまた、第１の接続端子を有する第１の回路部材と、第２の接続端子を有する第２の回路部材とを、第１の接続端子と第２の接続端子とを対向して配置し、対向配置した第１の接続端子と第２の接続端子との間に接着フィルムを介在させ、加熱加圧して、第１の接続端子と第２の接続端子とを電気的に接続させる回路部材の接続方法であって、接着フィルムは、導電粒子を含有する導電性接着層と絶縁性接着層とを有し、加熱加圧した後の、硬化した前記絶縁性接着層の主面の面積Ｃを硬化した前記導電性接着層の主面の面積Ｄで除した値Ｃ／Ｄが１．２〜３．０である、接続方法を提供する。このような接続方法によれば、本発明の接着フィルムを用いているため、十分に信頼性の高い接続構造が得られる。   The present invention also provides a first circuit member having a first connection terminal and a second circuit member having a second connection terminal, with the first connection terminal and the second connection terminal facing each other. An adhesive film is interposed between the first connection terminal and the second connection terminal that are disposed and opposed to each other, and is heated and pressed to electrically connect the first connection terminal and the second connection terminal. A method for connecting circuit members, wherein an adhesive film has a conductive adhesive layer containing conductive particles and an insulating adhesive layer, and is heated and pressurized, and is cured on a main surface of the cured insulating adhesive layer. A connection method is provided in which a value C / D obtained by dividing the area C by the area D of the main surface of the conductive adhesive layer cured is 1.2 to 3.0. According to such a connection method, since the adhesive film of the present invention is used, a sufficiently reliable connection structure can be obtained.

本発明によれば、ＣＯＧ実装やＣＯＦ実装に対して低抵抗の電気接続が得られ、且つ液晶表示用ガラスパネルへ液晶駆動用ＩＣを実装した後のパネル反り、及び隣接電極間でのショート発生が十分に防止される接着フィルム、並びにそれを用いた、回路部材の接続方法及び接続構造を提供することができる。   According to the present invention, electrical connection with low resistance is obtained for COG mounting and COF mounting, and panel warpage after mounting a liquid crystal driving IC on a liquid crystal display glass panel and occurrence of a short circuit between adjacent electrodes Can be provided, and a connection method and a connection structure for circuit members using the adhesive film can be provided.

本発明に係る回路部材の接続構造の一実施形態を示す概略断面図である。It is a schematic sectional drawing which shows one Embodiment of the connection structure of the circuit member which concerns on this invention. 加熱加圧後の硬化した接着フィルムをスキャナーで撮像した像を示す図である。It is a figure which shows the image which imaged the cured adhesive film after heat-pressing with the scanner.

以下、本発明の好適な実施形態について詳細に説明する。ただし、本発明は以下の実施形態に限定されるものではない。なお、図面中、同一要素には同一符号を付すこととし、重複する説明は省略する。また、上下左右等の位置関係は、特に断らない限り、図面に示す位置関係に基づくものとする。さらに、図面の寸法比率は図示の比率に限られるものではない。   Hereinafter, preferred embodiments of the present invention will be described in detail. However, the present invention is not limited to the following embodiments. In the drawings, the same elements are denoted by the same reference numerals, and redundant description is omitted. Further, the positional relationship such as up, down, left and right is based on the positional relationship shown in the drawings unless otherwise specified. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios.

（接着フィルム）
本発明は、導電粒子を含有する導電性接着層と、絶縁性接着層とが積層されており、積層方向に所定の条件で加熱加圧した後の、硬化した絶縁性接着層の主面の面積Ｃを、硬化した導電性接着層の主面の面積Ｄで除した値Ｃ／Ｄが１．２〜３．０である接着フィルムを提供する。 (Adhesive film)
In the present invention, a conductive adhesive layer containing conductive particles and an insulating adhesive layer are laminated, and the main surface of the cured insulating adhesive layer after being heated and pressed under predetermined conditions in the laminating direction. An adhesive film having a value C / D of 1.2 to 3.0 obtained by dividing the area C by the area D of the main surface of the cured conductive adhesive layer is provided.

かかる本発明の接着フィルムによれば、ＣＯＧ実装やＣＯＦ実装に対して低抵抗の電気接続が得られ、且つ液晶表示用ガラスパネルへ液晶駆動用ＩＣを実装した後のパネル反り、及び隣接電極間でのショート発生が十分に防止される。さらに、回路接続の際に、導電性接着層が流動せず、電極間に留まる樹脂を排除できないことにより生じる導通不良、あるいは、絶縁性接着層が過度に流動し、接続する回路間における樹脂の充填が不足することによる接着強度の低下等といった不具合を防止することができる。同様の観点からＣ／Ｄの値は１．５〜２．５であるとより好ましい。   According to such an adhesive film of the present invention, low resistance electrical connection is obtained with respect to COG mounting or COF mounting, and panel warpage after mounting a liquid crystal driving IC on a liquid crystal display glass panel, and between adjacent electrodes The occurrence of a short circuit is sufficiently prevented. Furthermore, when the circuit is connected, the conductive adhesive layer does not flow and the resin staying between the electrodes cannot be excluded, or conduction failure occurs, or the insulating adhesive layer flows excessively, and the resin between the connected circuits Problems such as a decrease in adhesive strength due to insufficient filling can be prevented. From the same viewpoint, the value of C / D is more preferably 1.5 to 2.5.

絶縁性接着層及び導電性接着層は、上記所定の条件で加熱加圧する前の主面の面積が実質的に同一である。この主面の面積をＡとする。また、上記所定の条件で加熱加圧した後の絶縁性接着層及び導電性接着層の主面の面積は、上述のとおりそれぞれＣ、Ｄとなる。絶縁性接着層及び導電性接着層の上記加熱加圧に伴う流動性の指標として、Ｃ／Ａ、Ｄ／Ａを定義する。これらの流動性の指標はその数値が高くなる程、上記加熱加圧に伴い流動しやすくなることを示している。本発明に係る上記値Ｃ／Ｄは、絶縁性接着層の流動性の指標Ｃ／Ａを、絶縁性接着層の流動性の指標Ｄ／Ａで除した値と同一になる。   The insulating adhesive layer and the conductive adhesive layer have substantially the same area of the main surface before being heated and pressed under the predetermined conditions. Let A be the area of this principal surface. Moreover, the areas of the main surfaces of the insulating adhesive layer and the conductive adhesive layer after being heated and pressed under the predetermined conditions are C and D, respectively, as described above. C / A and D / A are defined as indicators of fluidity accompanying the heating and pressing of the insulating adhesive layer and the conductive adhesive layer. These fluidity indices indicate that the higher the numerical value, the easier it is to flow with the heating and pressurization. The value C / D according to the present invention is the same as the value obtained by dividing the fluidity index C / A of the insulating adhesive layer by the fluidity index D / A of the insulating adhesive layer.

導電粒子としては、例えば、金（Ａｕ）、銀（Ａｇ）、ニッケル（Ｎｉ）、銅（Ｃｕ）、はんだ等の金属粒子；カーボン粒子；ガラス、セラミック、プラスチック等の非導電性物質の表面にＡｕ、Ａｇ、Ｃｕ等の導電性物質を被覆したもの；及び、Ｎｉ等の遷移金属の表面にＡｕ等の貴金属類を被覆したものが挙げられる。十分なポットライフを得る観点から、導電粒子の表層はＡｕ、Ａｇ、白金属の貴金属類であることが好ましく、Ａｕであることがより好ましい。また、導電粒子として、非導電性物質に貴金属類を被覆したもの又は熱溶融金属粒子を用いた場合は、加熱加圧により変形性を有し、接続時に電極との接触面積が増加し信頼性が向上するので好ましい。   Examples of the conductive particles include metal particles such as gold (Au), silver (Ag), nickel (Ni), copper (Cu), and solder; carbon particles; on the surface of non-conductive substances such as glass, ceramic, and plastic. Examples include those in which a conductive material such as Au, Ag, or Cu is coated; and those in which a surface of a transition metal such as Ni is coated with a noble metal such as Au. From the viewpoint of obtaining a sufficient pot life, the surface layer of the conductive particles is preferably a noble metal such as Au, Ag, or white metal, and more preferably Au. In addition, when conductive particles are made of non-conductive materials coated with precious metals or hot-melt metal particles, they are deformable by heating and pressurization, and the contact area with the electrode increases at the time of connection. Is preferable.

非導電性物質の表面に貴金属類を被覆したものにおける被覆層の厚みは、良好な抵抗を得るために、１００オングストローム以上であることが好ましい。また、Ｎｉ等の遷移金属の表面に貴金属類を被覆したものの場合には、貴金属類からなる被覆層の欠損や導電粒子の混合分散時に生じる被覆層の欠損等により生じる酸化還元作用で遊離ラジカルが発生し保存性低下を引き起こすおそれがある。そのため、被覆層の厚みが３００オングストローム以上であることが好ましい。なお、被覆層の厚みが１μｍ以上となると上述の効果が飽和してくることから、被覆層の厚みは１μｍ未満であることが望ましいが、これは被覆層の厚みを制限するものではない。上記導電粒子は１種を単独で又は２種以上を組み合わせて用いられる。   In order to obtain good resistance, the thickness of the coating layer in the case where the surface of the non-conductive substance is coated with noble metals is preferably 100 angstroms or more. In addition, in the case where the surface of a transition metal such as Ni is coated with a noble metal, free radicals are generated by redox action caused by a loss of the coating layer made of noble metal or a loss of the coating layer generated when the conductive particles are mixed and dispersed. It may occur and cause deterioration of storage stability. Therefore, the thickness of the coating layer is preferably 300 angstroms or more. In addition, since the above-mentioned effect will be saturated when the thickness of a coating layer will be 1 micrometer or more, it is desirable that the thickness of a coating layer is less than 1 micrometer, but this does not restrict | limit the thickness of a coating layer. The conductive particles may be used alone or in combination of two or more.

このような導電粒子は、接着フィルム中の樹脂成分１００体積部に対して、０．１〜３０体積部含有させることが好ましく、０．１〜１０体積部含有させることがより好ましい。これによれば、過剰な導電粒子による隣接回路の短絡をより高度に防止することができる。なお、上記「樹脂成分」とは、接着フィルム中、導電粒子以外の成分のことをいい、具体的には後述するフィルム形成材、エポキシ樹脂、潜在性硬化剤等のことをいう。   Such conductive particles are preferably contained in an amount of 0.1 to 30 parts by volume, and more preferably 0.1 to 10 parts by volume with respect to 100 parts by volume of the resin component in the adhesive film. According to this, the short circuit of the adjacent circuit due to excessive conductive particles can be prevented to a higher degree. The “resin component” refers to a component other than the conductive particles in the adhesive film, and specifically refers to a film forming material, an epoxy resin, a latent curing agent, and the like, which will be described later.

絶縁性接着層及び導電性接着層は、フィルム形成材、エポキシ樹脂及び潜在性硬化剤を含むことが好ましい。これによれば、本発明による上述の効果をより確実に奏することができる。   The insulating adhesive layer and the conductive adhesive layer preferably contain a film forming material, an epoxy resin, and a latent curing agent. According to this, the above-mentioned effect by this invention can be show | played more reliably.

フィルム形成材とは、液状物を固形化し、構成組成物をフィルム形状とした場合に、そのフィルムの取扱いが容易となり、且つ容易に裂けたり、割れたり、べたついたりしない機械特性等を付与するものであり、通常の状態でフィルムとしての取扱いができるものである。その具体例としては、フェノキシ樹脂、ポリビニルホルマール樹脂、ポリスチレン樹脂、ポリビニルブチラール樹脂、ポリエステル樹脂、ポリアミド樹脂、キシレン樹脂及びポリウレタン樹脂が挙げられる。これらは１種を単独で又は２種以上を組み合わせて用いられる。この中で、接着性、相溶性、耐熱性及び機械強度に優れることからフェノキシ樹脂が、特に好ましい。   The film-forming material is a material that solidifies a liquid material and forms a composition composition into a film shape, which makes it easy to handle the film and imparts mechanical properties that do not easily tear, break, or stick. It can be handled as a film in a normal state. Specific examples thereof include phenoxy resin, polyvinyl formal resin, polystyrene resin, polyvinyl butyral resin, polyester resin, polyamide resin, xylene resin, and polyurethane resin. These are used singly or in combination of two or more. Among these, a phenoxy resin is particularly preferable because of excellent adhesiveness, compatibility, heat resistance, and mechanical strength.

フェノキシ樹脂は、例えば、二官能性フェノール類とエピハロヒドリンを高分子量まで反応させるか、二官能性エポキシ樹脂と二官能性フェノール類を重付加させることにより得られる樹脂である。具体的には、フェノキシ樹脂は、二官能性フェノール類１モルとエピハロヒドリン０．９８５〜１．０１５とを、アルカリ金属水酸化物の存在下において非反応性溶媒中で４０〜１２０℃の温度で反応させることにより得ることができる。   The phenoxy resin is, for example, a resin obtained by reacting a bifunctional phenol and epihalohydrin to a high molecular weight or by polyaddition of a bifunctional epoxy resin and a bifunctional phenol. Specifically, the phenoxy resin contains 1 mol of a difunctional phenol and epihalohydrin 0.985 to 1.015 at a temperature of 40 to 120 ° C. in a non-reactive solvent in the presence of an alkali metal hydroxide. It can be obtained by reacting.

このようなフェノキシ樹脂としては、機械的特性や熱的特性を向上させる点から、特に二官能性エポキシ樹脂と二官能性フェノール類との配合当量比をエポキシ基／フェノール水酸基で１／０．９〜１／１．１とし、アルカリ金属化合物、有機リン系化合物、環状アミン系化合物等の触媒の存在下、沸点が１２０℃以上のアミド系、エーテル系、ケトン系、ラクトン系、アルコール系等の有機溶剤中で、反応固形分が５０質量％以下の状態で５０〜２００℃に加熱して重付加反応させることにより得られるものが好ましい。   As such a phenoxy resin, from the viewpoint of improving mechanical characteristics and thermal characteristics, the blending equivalent ratio of the bifunctional epoxy resin and the bifunctional phenols is particularly 1 / 0.9 in terms of epoxy group / phenolic hydroxyl group. To 1 / 1.1, in the presence of a catalyst such as an alkali metal compound, an organophosphorus compound, or a cyclic amine compound, such as an amide, ether, ketone, lactone, alcohol or the like having a boiling point of 120 ° C. or higher. What is obtained by heating to 50-200 degreeC and making a polyaddition reaction in the state whose reaction solid content is 50 mass% or less in an organic solvent is preferable.

二官能性エポキシ樹脂としては、例えば、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ビスフェノールＡＤ型エポキシ樹脂、ビスフェノールＳ型エポキシ樹脂が挙げられる。二官能性フェノール類は２個のフェノール性水酸基を有するものであり、例えば、ビスフェノールＡ、ビスフェノールＦ、ビスフェノールＡＤ、ビスフェノールＳ等のビスフェノール類が挙げられる。フェノキシ樹脂はラジカル重合性の官能基によって変性されていてもよい。   Examples of the bifunctional epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol AD type epoxy resin, and bisphenol S type epoxy resin. Bifunctional phenols have two phenolic hydroxyl groups, and examples thereof include bisphenols such as bisphenol A, bisphenol F, bisphenol AD, and bisphenol S. The phenoxy resin may be modified with a radical polymerizable functional group.

上述のフェノキシ樹脂は、１種を単独で用いても、２種以上を混合して用いてもよい。また、絶縁性接着層及び導電性接着層に、互いに異なる種類のフェノキシ樹脂を含有させてもよい。例えば、絶縁性接着層にビスフェノールＦ型フェノキシ樹脂を含有させ、導電性接着層にビスフェノールＡ型フェノキシ樹脂及びビスフェノールＡ・Ｆ共重合型フェノキシ樹脂からなる群より選択される少なくとも１種の樹脂を含有させることが好ましい。これによれば、絶縁性接着層の耐熱性及び流動性が向上し、導電性接着層の弾性率及び流動性が低下する。よって、導電性接着層の絶縁性接着層に対する流動性が抑制される。   The above phenoxy resins may be used alone or in combination of two or more. Further, different types of phenoxy resins may be contained in the insulating adhesive layer and the conductive adhesive layer. For example, the insulating adhesive layer contains bisphenol F type phenoxy resin, and the conductive adhesive layer contains at least one resin selected from the group consisting of bisphenol A type phenoxy resin and bisphenol A / F copolymer type phenoxy resin. It is preferable to make it. According to this, the heat resistance and fluidity of the insulating adhesive layer are improved, and the elastic modulus and fluidity of the conductive adhesive layer are lowered. Accordingly, the fluidity of the conductive adhesive layer with respect to the insulating adhesive layer is suppressed.

エポキシ樹脂としては、例えば、エピクロルヒドリンとビスフェノールＡ、ビスフェノールＦ又はビスフェノールＡＤとから誘導されるビスフェノール型エポキシ樹脂；エピクロルヒドリンとフェノールノボラック又はクレゾールノボラックとから誘導されるエポキシノボラック樹脂；ナフタレン環を含む骨格を有するナフタレン系エポキシ樹脂；グリシジルアミン、グリシジルエーテル、ビフェニル及び脂環式等の１分子内に２個以上のグリシジル基を有する各種のエポキシ化合物を用いることができる。これらのエポキシ樹脂は、単独で、又は２種以上を混合して用いることできる。これらのエポキシ樹脂は、不純物イオン（Ｎａ＋、Ｃｌ−等）や、加水分解性塩素等を３００ｐｐｍ以下に低減した高純度品を用いることがエレクトロンマイグレーション防止のために好ましい。 Examples of the epoxy resin include a bisphenol type epoxy resin derived from epichlorohydrin and bisphenol A, bisphenol F, or bisphenol AD; an epoxy novolac resin derived from epichlorohydrin and a phenol novolac or cresol novolac; and a skeleton including a naphthalene ring. Various epoxy compounds having two or more glycidyl groups in one molecule such as naphthalene-based epoxy resin; glycidylamine, glycidyl ether, biphenyl, and alicyclic can be used. These epoxy resins can be used alone or in admixture of two or more. For these epoxy resins, it is preferable to use a high-purity product in which impurity ions (Na + , Cl −, etc.), hydrolyzable chlorine and the like are reduced to 300 ppm or less, in order to prevent electron migration.

本発明で使用する潜在性硬化剤としては、例えば、イミダゾール系硬化剤、ヒドラジド系硬化剤、三フッ化ホウ素−アミン錯体、スルホニウム塩、アミンイミド、ポリアミンの塩、ジシアンジアミドが挙げられる。これらの潜在性硬化剤は、１種を単独で、又は２種以上を混合して使用することができ、分解促進剤、抑制剤等を混合して用いてもよい。また、これらの硬化剤をポリウレタン系、ポリエステル系の高分子物質等で被覆してマイクロカプセル化したものは、可使時間が延長されることから好ましい。   Examples of the latent curing agent used in the present invention include imidazole curing agents, hydrazide curing agents, boron trifluoride-amine complexes, sulfonium salts, amine imides, polyamine salts, and dicyandiamide. These latent curing agents can be used singly or in combination of two or more, and may be used by mixing a decomposition accelerator, an inhibitor and the like. In addition, it is preferable to use these hardeners coated with a polyurethane-based or polyester-based polymer substance to form a microcapsule because the pot life is extended.

本発明の接着フィルムは、絶縁性接着層及び／又は導電性接着層に、アクリル酸、アクリル酸エステル、メタクリル酸エステルまたはアクリロニトリルのうち少なくとも一つをモノマー成分とした重合体又は共重合体を含有していてもよい。グリシジルエーテル基を含有するグリシジルアクリレートやグリシジルメタクリレートを含む共重合体系アクリルゴムを併用した場合は、応力緩和に優れることから好ましい。このようなアクリルゴムの分子量（サイズ排除クロマトグラフィーによるポリスチレン換算重量平均分子量）は接着フィルムの凝集力を高める点から２０万以上であることが好ましい。   The adhesive film of the present invention contains a polymer or copolymer containing at least one of acrylic acid, acrylic ester, methacrylic ester or acrylonitrile as a monomer component in the insulating adhesive layer and / or the conductive adhesive layer. You may do it. The use of a copolymer acrylic rubber containing glycidyl acrylate or glycidyl methacrylate containing a glycidyl ether group is preferable because of excellent stress relaxation. The molecular weight of the acrylic rubber (weight average molecular weight in terms of polystyrene by size exclusion chromatography) is preferably 200,000 or more from the viewpoint of increasing the cohesive force of the adhesive film.

接着フィルムは、絶縁性接着層及び／又は導電性接着層に、さらに、充填剤、軟化剤、促進剤、老化防止剤、難燃化剤、色素、チキソトロピック剤、カップリング剤、メラミン樹脂及びイソシアネート類を含有していてもよい。   The adhesive film comprises an insulating adhesive layer and / or a conductive adhesive layer, a filler, a softening agent, an accelerator, an anti-aging agent, a flame retardant, a dye, a thixotropic agent, a coupling agent, a melamine resin, and It may contain isocyanates.

充填剤を含有した場合、接続信頼性等の向上が得られるので好ましい。充填剤は、その最大径が導電粒子の粒径未満であれば使用できる。充填剤の含有割合は、接着フィルム中の樹脂成分１００体積部に対して、５〜６０体積部の範囲が好ましい。この含有割合が６０体積部を超えると信頼性向上の効果が飽和しやすくなり、５体積部未満では充填剤の添加による効果が小さい。   The inclusion of a filler is preferable because improvement in connection reliability and the like can be obtained. The filler can be used if its maximum diameter is less than the particle diameter of the conductive particles. The content of the filler is preferably in the range of 5 to 60 parts by volume with respect to 100 parts by volume of the resin component in the adhesive film. When the content ratio exceeds 60 parts by volume, the effect of improving the reliability tends to be saturated, and when the content is less than 5 parts by volume, the effect by addition of the filler is small.

カップリング剤としてはケチミン、ビニル基、アクリル基、アミノ基、エポキシ基及びイソシアネート基含有物が、接着性の向上の点から好ましい。その具体例としては、アミノ基を有するシランカップリング剤として、Ｎ−β（アミノエチル）γ−アミノプロピルトリメトキシシラン、Ｎ−β（アミノエチル）γ−アミノプロピルメチルジメトキシシラン、γ−アミノプロピルトリエトキシシラン、Ｎ−フェニル−γ−アミノプロピルトリメトキシシランが挙げられる。また、ケチミンを有するシランカップリング剤として、上述のアミノ基を有するシランカップリング剤に、アセトン、メチルエチルケトン、メチルイソブチルケトン等のケトン化合物を反応させて得られたものが挙げられる。   As the coupling agent, ketimine, vinyl group, acrylic group, amino group, epoxy group and isocyanate group-containing material are preferable from the viewpoint of improving adhesiveness. Specific examples thereof include N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropylmethyldimethoxysilane, γ-aminopropyl as silane coupling agents having an amino group. Examples include triethoxysilane and N-phenyl-γ-aminopropyltrimethoxysilane. Examples of the silane coupling agent having ketimine include those obtained by reacting the above-mentioned silane coupling agent having an amino group with a ketone compound such as acetone, methyl ethyl ketone, and methyl isobutyl ketone.

上述の接着フィルムの硬化物は、４０℃、周波数１０Ｈｚにおける貯蔵弾性率Ｅ’が０．５〜２．５ＧＰａであることが好ましく、１．０〜２．０ＧＰａであることがより好ましい。   The cured product of the above-mentioned adhesive film preferably has a storage elastic modulus E ′ at 40 ° C. and a frequency of 10 Hz of 0.5 to 2.5 GPa, and more preferably 1.0 to 2.0 GPa.

これによれば、貯蔵弾性率が上記範囲外である場合と比較して、接続端子を接続した後の接着フィルムの硬化物中の成分の凝集力が向上し、且つ内部応力が低減する。そのため、この接着フィルムを用いた実装品の表示品質、接着力及び導通特性の向上等といった有利な効果が得られる。貯蔵弾性率が０．５ＧＰａ未満である場合には、上述の範囲にある場合と比較して、接着フィルムの硬化物中の成分の凝集力が低く、回路部材を接続するときの接続部分の電気抵抗が上昇する傾向にある。また、貯蔵弾性率が２．５ＧＰａを超える場合には、上述の範囲にある場合と比較して、接着フィルムの硬化物の硬度が上昇し、実装品のパネル反り防止効果が低下する傾向にある。   According to this, compared with the case where a storage elastic modulus is outside the said range, the cohesion force of the component in the hardened | cured material of the adhesive film after connecting a connection terminal improves, and internal stress reduces. Therefore, advantageous effects such as improvement in display quality, adhesive strength, and conduction characteristics of a mounted product using the adhesive film can be obtained. When the storage elastic modulus is less than 0.5 GPa, the cohesive force of the components in the cured product of the adhesive film is lower than that in the above range, and the electrical connection portion when connecting the circuit members is low. Resistance tends to increase. Further, when the storage elastic modulus exceeds 2.5 GPa, the hardness of the cured product of the adhesive film increases and the effect of preventing the panel warpage of the mounted product tends to decrease as compared with the case where the storage elastic modulus is in the above range. .

本発明の接着フィルムは、絶縁性接着層と導電性接着層とからなる２層から構成されるものであってもよく、３層以上の層から構成されるものであってもよい。３層以上の層から構成される場合、絶縁性接着層及び導電性接着層は交互に積層されることが好ましい。例えば、３層から構成される接着フィルムとしては、導電性接着層、絶縁性接着層及び導電性接着層がこの順で積層されたもの、あるいは絶縁性接着層、導電性接着層及び絶縁性接着層がこの順で積層されたものが挙げられる。これらの場合、導電性接着層同士又は絶縁性接着層同士は材料、組成及び／又は膜厚が異なっていてもよく、同一であってもよい。   The adhesive film of the present invention may be composed of two layers composed of an insulating adhesive layer and a conductive adhesive layer, or may be composed of three or more layers. When composed of three or more layers, the insulating adhesive layer and the conductive adhesive layer are preferably laminated alternately. For example, as an adhesive film composed of three layers, a conductive adhesive layer, an insulating adhesive layer, and a conductive adhesive layer are laminated in this order, or an insulating adhesive layer, a conductive adhesive layer, and an insulating adhesive. The layer is laminated in this order. In these cases, the conductive adhesive layers or the insulating adhesive layers may be different in material, composition and / or film thickness, or may be the same.

３層以上の層から構成される接着フィルムにおいては、積層方向に所定の条件で加熱加圧した後に、互いに接する導電性接着層及び絶縁性接着層のうち少なくとも１組についてのＣ／Ｄの値が１．２〜３．０となる。さらに、３層以上の層から構成される接着フィルムにおいては、積層方向に所定の条件で加熱加圧した後に、互いに接する導電性接着層及び絶縁性接着層のそれぞれについてのＣ／Ｄの値が全て１．２〜３．０となることが好ましい。   In an adhesive film composed of three or more layers, the value of C / D for at least one of the conductive adhesive layer and the insulating adhesive layer in contact with each other after being heated and pressed under predetermined conditions in the laminating direction Becomes 1.2 to 3.0. Furthermore, in an adhesive film composed of three or more layers, the C / D value for each of the conductive adhesive layer and the insulating adhesive layer that are in contact with each other after being heated and pressed under predetermined conditions in the laminating direction is It is preferable that all become 1.2-3.0.

上述のＣ／Ｄの数値範囲を満足する本発明の接着フィルムは、例えば、下記（１）、（２）のうちいずれか１層の絶縁性接着層と、下記（３）〜（５）のうちいずれか１層の導電性接着層とを組み合わせることにより得ることができる。
（１）ビスフェノールＦ型フェノキシ樹脂を含有する絶縁性接着層。
（２）重量平均分子量１０００〜１００００のビスフェノールＡ型固形エポキシ樹脂、重量平均分子量１０００〜１００００のＡ・Ｆ型固形エポキシ樹脂、及び、重量平均分子量１０００〜１００００のＦ型固形エポキシ樹脂のうち少なくともいずれかを含有する絶縁性接着層。
（３）ビスフェノールＡ型フェノキシ樹脂、又は、ビスフェノールＡ・Ｆ共重合型フェノキシ樹脂を含有する導電性接着層。
（４）分子内にフルオレン環を含むフェノキシ樹脂を含有する導電性接着層。
（５）樹脂成分１００体積部に対して粒径０．１〜１．０μｍの非導電性微粒子を５〜３０体積部含有する導電性接着層。 The adhesive film of the present invention that satisfies the numerical range of C / D described above includes, for example, any one of the following (1) and (2) insulating adhesive layers and the following (3) to (5): It can be obtained by combining any one of the conductive adhesive layers.
(1) An insulating adhesive layer containing a bisphenol F-type phenoxy resin.
(2) At least one of bisphenol A type solid epoxy resin having a weight average molecular weight of 1000 to 10000, A / F type solid epoxy resin having a weight average molecular weight of 1000 to 10,000, and F type solid epoxy resin having a weight average molecular weight of 1000 to 10,000 Insulating adhesive layer containing
(3) A conductive adhesive layer containing a bisphenol A type phenoxy resin or a bisphenol A / F copolymer type phenoxy resin.
(4) A conductive adhesive layer containing a phenoxy resin containing a fluorene ring in the molecule.
(5) A conductive adhesive layer containing 5 to 30 parts by volume of nonconductive fine particles having a particle size of 0.1 to 1.0 μm with respect to 100 parts by volume of the resin component.

上述の接着フィルムは、例えば、ＣＯＧ実装やＣＯＦ実装において、ＩＣチップとフレキシブルテープやガラス基板とを電気的に接続するために用いることができる。   The above-mentioned adhesive film can be used for electrically connecting an IC chip and a flexible tape or a glass substrate in COG mounting or COF mounting, for example.

（回路部材の接続構造）
本発明は、第１の接続端子を有する第１の回路部材と、第２の接続端子を有する第２の回路部材とを、第１の接続端子と第２の接続端子とを対向して配置し、対向配置した第１の接続端子と第２の接続端子との間に上述の接着フィルムを介在させ、加熱加圧して、第１の接続端子と第２の接続端子とを電気的に接続させてなる回路部材の接続構造を提供する。 (Circuit member connection structure)
According to the present invention, a first circuit member having a first connection terminal and a second circuit member having a second connection terminal are disposed so that the first connection terminal and the second connection terminal are opposed to each other. Then, the above-mentioned adhesive film is interposed between the first connection terminal and the second connection terminal that are arranged opposite to each other, and heated and pressed to electrically connect the first connection terminal and the second connection terminal. A circuit member connection structure is provided.

図１は、本発明に係る回路部材の接続構造の好適な一実施形態を示す概略断面図である。図１に示す接続構造１００は、相互に対向する第１の回路部材１０及び第２の回路部材２０を備えており、第１の回路部材１０と第２の回路部材２０との間には、これらを接続する回路接続部材３０が設けられている。   FIG. 1 is a schematic sectional view showing a preferred embodiment of a circuit member connection structure according to the present invention. The connection structure 100 shown in FIG. 1 includes a first circuit member 10 and a second circuit member 20 that face each other, and between the first circuit member 10 and the second circuit member 20, A circuit connection member 30 for connecting them is provided.

第１及び第２の回路部材１０，２０の具体例としては、半導体チップ、抵抗体チップ若しくはコンデンサチップ等のチップ部品又はプリント基板等の基板が挙げられる。接続構造１００の接続形態としては、ＩＣチップとチップ搭載基板との接続、電気回路相互の接続、ＣＯＧ実装又はＣＯＦ実装におけるＩＣチップとガラス基板又はフレキシブルテープとの接続等もある。   Specific examples of the first and second circuit members 10 and 20 include a chip component such as a semiconductor chip, a resistor chip or a capacitor chip, or a substrate such as a printed board. Examples of the connection form of the connection structure 100 include connection between an IC chip and a chip mounting substrate, connection between electrical circuits, connection between an IC chip and a glass substrate or a flexible tape in COG mounting or COF mounting.

特に、回路部材１０，２０のうち少なくとも一方がＩＣチップであると好ましい。   In particular, it is preferable that at least one of the circuit members 10 and 20 is an IC chip.

また、回路部材１０，２０のうち少なくとも一方の表面が窒化シリコン、シリコーン化合物及びポリイミド樹脂からなる群より選ばれる少なくとも１種でコーティング又は付着処理されていることが好ましい。上述の接着フィルムによれば、このような回路部材に対する接着強度が特に良好となる。   Moreover, it is preferable that at least one surface of the circuit members 10 and 20 is coated or adhered with at least one selected from the group consisting of silicon nitride, silicone compounds, and polyimide resins. According to the above-mentioned adhesive film, the adhesive strength to such a circuit member is particularly good.

第１の回路部材１０は、第１の回路基板１１と、第１の回路基板１１の主面１１ａ上に形成された第１の電極(接続端子)１２とを有する。第２の回路部材２０は、第２の回路基板２１と、第２の回路基板２１の主面２１ａ上に形成された第２の電極(接続端子)２２とを有する。接続構造１００においては、第１の電極１２と第２の電極２２とが対向配置され、かつ電気的に接続されている。なお、第１の回路基板１１の主面１１ａ上、及び第２の回路基板２１の主面２１ａ上には、場合により絶縁層（図示せず）が形成されていてもよい。   The first circuit member 10 includes a first circuit board 11 and a first electrode (connection terminal) 12 formed on the main surface 11 a of the first circuit board 11. The second circuit member 20 includes a second circuit board 21 and a second electrode (connection terminal) 22 formed on the main surface 21 a of the second circuit board 21. In the connection structure 100, the first electrode 12 and the second electrode 22 are arranged to face each other and are electrically connected. In some cases, an insulating layer (not shown) may be formed on the main surface 11a of the first circuit board 11 and the main surface 21a of the second circuit board 21.

第１及び第２の電極１１，１２のうち少なくとも一方の表面が、金、銀、錫、白金族の金属及びインジウム−錫酸化物（ＩＴＯ）からなる群より選ばれる少なくとも１種を含むことが好ましい。   At least one surface of the first and second electrodes 11 and 12 includes at least one selected from the group consisting of gold, silver, tin, a platinum group metal, and indium-tin oxide (ITO). preferable.

回路接続部材３０は、上述の接着フィルムの硬化物である。接着フィルムの硬化物中の導電粒子（図示せず）により第１の電極１２と第２の電極２２とが電気的に接続される。   The circuit connection member 30 is a cured product of the above-described adhesive film. The first electrode 12 and the second electrode 22 are electrically connected by conductive particles (not shown) in the cured product of the adhesive film.

本実施形態の接続構造１００の製造方法、すなわち回路部材１０，２０の接続方法は、例えば以下のとおりである。まず、第１及び第２の回路部材１０、２０の間に、上述の接着フィルムを介在させる。このとき、第１の電極１２及び第２の電極２２が相互に対向するように、第１及び第２の回路部材１０、２０を配置する。なお、接着フィルムはその絶縁性接着層側が第１の電極１２に接するように介在させてもよく、第２の電極２２と接するように介在させてもよい。次に、第１及び第２の回路部材１０、２０を介して接着フィルムを加熱しながら、それらの積層方向に加圧して、接着フィルムの硬化処理を施し接続構造１００を形成する。硬化処理は、一般的な方法により行うことが可能であり、その方法は接着フィルムにより適宜選択される。   The manufacturing method of the connection structure 100 of this embodiment, ie, the connection method of the circuit members 10 and 20, is as follows, for example. First, the above-mentioned adhesive film is interposed between the first and second circuit members 10 and 20. At this time, the first and second circuit members 10 and 20 are arranged so that the first electrode 12 and the second electrode 22 face each other. Note that the adhesive film may be interposed such that the insulating adhesive layer side is in contact with the first electrode 12, or may be interposed so as to be in contact with the second electrode 22. Next, while heating the adhesive film via the first and second circuit members 10 and 20, the adhesive film is pressurized in the laminating direction, and the adhesive film is cured to form the connection structure 100. The curing treatment can be performed by a general method, and the method is appropriately selected depending on the adhesive film.

以上、本発明の好適な実施形態について説明したが、本発明は上記実施形態に限定されるものではない。本発明は、その要旨を逸脱しない範囲で様々な変形が可能である。   The preferred embodiment of the present invention has been described above, but the present invention is not limited to the above embodiment. The present invention can be variously modified without departing from the gist thereof.

本発明は、下記の接着フィルム、回路部材の接続構造及び回路部材の接続方法を提供することができる。
［１］
第１の接続端子を有する第１の回路部材と、
第２の接続端子を有する第２の回路部材とを、
前記第１の接続端子と前記第２の接続端子とを対向して配置し、
対向配置した前記第１の接続端子と前記第２の接続端子との間に接着フィルムを介在させ、加熱加圧して、対向配置した前記第１の接続端子と前記第２の接続端子とを電気的に接続させる回路部材の接続方法であって、
前記接着フィルムは、導電粒子を含有する導電性接着層と、絶縁性接着層と、が積層されてなる接着フィルムであり、
前記絶縁性接着層は、下記（１）、（２）のうちいずれか１層であり、
前記導電性接着層は、下記（３）〜（５）のうちいずれか１層である、回路部材の接続方法。
（１）ビスフェノールＦ型フェノキシ樹脂を含有する絶縁性接着層。
（２）重量平均分子量１０００〜１００００のビスフェノールＡ型固形エポキシ樹脂、重量平均分子量１０００〜１００００のＡ・Ｆ型固形エポキシ樹脂、及び、重量平均分子量１０００〜１００００のＦ型固形エポキシ樹脂のうち少なくともいずれかを含有する絶縁性接着層。
（３）ビスフェノールＡ型フェノキシ樹脂、又は、ビスフェノールＡ・Ｆ共重合型フェノキシ樹脂を含有する導電性接着層。
（４）分子内にフルオレン環を含むフェノキシ樹脂を含有する導電性接着層。
（５）樹脂成分１００体積部に対して粒径０．１〜１．０μｍの非導電性微粒子を５〜３０体積部含有する導電性接着層。
［２］
第１の接続端子を有する第１の回路部材と、
第２の接続端子を有する第２の回路部材とを、
前記第１の接続端子と前記第２の接続端子とを対向して配置し、
対向配置した前記第１の接続端子と前記第２の接続端子との間に接着フィルムを介在させ、加熱加圧して、前記第１の接続端子と前記第２の接続端子とを電気的に接続させてなる回路部材の接続構造であって、
前記接着フィルムは、導電粒子を含有する導電性接着層と、絶縁性接着層と、が積層されてなる接着フィルムであり、
前記絶縁性接着層は、下記（１）、（２）のうちいずれか１層であり、
前記導電性接着層は、下記（３）〜（５）のうちいずれか１層である、回路部材の接続構造。
（１）ビスフェノールＦ型フェノキシ樹脂を含有する絶縁性接着層。
（２）重量平均分子量１０００〜１００００のビスフェノールＡ型固形エポキシ樹脂、重量平均分子量１０００〜１００００のＡ・Ｆ型固形エポキシ樹脂、及び、重量平均分子量１０００〜１００００のＦ型固形エポキシ樹脂のうち少なくともいずれかを含有する絶縁性接着層。
（３）ビスフェノールＡ型フェノキシ樹脂、又は、ビスフェノールＡ・Ｆ共重合型フェノキシ樹脂を含有する導電性接着層。
（４）分子内にフルオレン環を含むフェノキシ樹脂を含有する導電性接着層。
（５）樹脂成分１００体積部に対して粒径０．１〜１．０μｍの非導電性微粒子を５〜３０体積部含有する導電性接着層。
［３］
導電粒子を含有する導電性接着層と、絶縁性接着層と、が積層されており、
前記絶縁性接着層は、下記（１）、（２）のうちいずれか１層であり、
前記導電性接着層は、下記（３）〜（５）のうちいずれか１層である接着フィルム。
（１）ビスフェノールＦ型フェノキシ樹脂を含有する絶縁性接着層。
（２）重量平均分子量１０００〜１００００のビスフェノールＡ型固形エポキシ樹脂、重量平均分子量１０００〜１００００のＡ・Ｆ型固形エポキシ樹脂、及び、重量平均分子量１０００〜１００００のＦ型固形エポキシ樹脂のうち少なくともいずれかを含有する絶縁性接着層。
（３）ビスフェノールＡ型フェノキシ樹脂、又は、ビスフェノールＡ・Ｆ共重合型フェノキシ樹脂を含有する導電性接着層。
（４）分子内にフルオレン環を含むフェノキシ樹脂を含有する導電性接着層。
（５）樹脂成分１００体積部に対して粒径０．１〜１．０μｍの非導電性微粒子を５〜３０体積部含有する導電性接着層。
［４］
相対峙する接続端子間を電気的に接続するために用いられる、［３］記載の接着フィルム。
［５］
前記絶縁性接着層及び／又は前記導電性接着層が、フィルム形成材、エポキシ樹脂及び潜在性硬化剤を含む、［３］又は［４］記載の接着フィルム。
［６］
前記絶縁性接着層及び／又は前記導電性接着層が、エポキシ樹脂及び潜在性硬化剤を含む、［３］又は［４］記載の接着フィルム。
［７］
ＣＯＧ(Chip-On-Glass)実装又はＣＯＦ(Chip-On-Flex)実装に用いられる、［３］又は［４］記載の接着フィルム。 The present invention can provide the following adhesive film, circuit member connection structure, and circuit member connection method.
[1]
A first circuit member having a first connection terminal;
A second circuit member having a second connection terminal;
The first connection terminal and the second connection terminal are arranged to face each other,
An adhesive film is interposed between the first connection terminal and the second connection terminal arranged opposite to each other, and heated and pressed to electrically connect the first connection terminal and the second connection terminal arranged opposite to each other. A method of connecting circuit members to be connected,
The adhesive film is an adhesive film formed by laminating a conductive adhesive layer containing conductive particles and an insulating adhesive layer,
The insulating adhesive layer is any one of the following (1) and (2),
The method for connecting circuit members, wherein the conductive adhesive layer is any one of the following (3) to (5).
(1) An insulating adhesive layer containing a bisphenol F-type phenoxy resin.
(2) At least one of bisphenol A type solid epoxy resin having a weight average molecular weight of 1000 to 10000, A / F type solid epoxy resin having a weight average molecular weight of 1000 to 10,000, and F type solid epoxy resin having a weight average molecular weight of 1000 to 10,000 Insulating adhesive layer containing
(3) A conductive adhesive layer containing a bisphenol A type phenoxy resin or a bisphenol A / F copolymer type phenoxy resin.
(4) A conductive adhesive layer containing a phenoxy resin containing a fluorene ring in the molecule.
(5) A conductive adhesive layer containing 5 to 30 parts by volume of nonconductive fine particles having a particle size of 0.1 to 1.0 μm with respect to 100 parts by volume of the resin component.
[2]
A first circuit member having a first connection terminal;
A second circuit member having a second connection terminal;
The first connection terminal and the second connection terminal are arranged to face each other,
An adhesive film is interposed between the first connection terminal and the second connection terminal that are arranged to face each other, and is heated and pressed to electrically connect the first connection terminal and the second connection terminal. A circuit member connection structure,
The adhesive film is an adhesive film formed by laminating a conductive adhesive layer containing conductive particles and an insulating adhesive layer,
The insulating adhesive layer is any one of the following (1) and (2),
The conductive adhesive layer is a circuit member connection structure according to any one of the following (3) to (5).
(1) An insulating adhesive layer containing a bisphenol F-type phenoxy resin.
(2) At least one of bisphenol A type solid epoxy resin having a weight average molecular weight of 1000 to 10000, A / F type solid epoxy resin having a weight average molecular weight of 1000 to 10,000, and F type solid epoxy resin having a weight average molecular weight of 1000 to 10,000 Insulating adhesive layer containing
(3) A conductive adhesive layer containing a bisphenol A type phenoxy resin or a bisphenol A / F copolymer type phenoxy resin.
(4) A conductive adhesive layer containing a phenoxy resin containing a fluorene ring in the molecule.
(5) A conductive adhesive layer containing 5 to 30 parts by volume of nonconductive fine particles having a particle size of 0.1 to 1.0 μm with respect to 100 parts by volume of the resin component.
[3]
A conductive adhesive layer containing conductive particles and an insulating adhesive layer are laminated,
The insulating adhesive layer is any one of the following (1) and (2),
The conductive adhesive layer is any one of the following (3) to (5).
(1) An insulating adhesive layer containing a bisphenol F-type phenoxy resin.
(2) At least one of bisphenol A type solid epoxy resin having a weight average molecular weight of 1000 to 10000, A / F type solid epoxy resin having a weight average molecular weight of 1000 to 10,000, and F type solid epoxy resin having a weight average molecular weight of 1000 to 10,000 Insulating adhesive layer containing
(3) A conductive adhesive layer containing a bisphenol A type phenoxy resin or a bisphenol A / F copolymer type phenoxy resin.
(4) A conductive adhesive layer containing a phenoxy resin containing a fluorene ring in the molecule.
(5) A conductive adhesive layer containing 5 to 30 parts by volume of nonconductive fine particles having a particle size of 0.1 to 1.0 μm with respect to 100 parts by volume of the resin component.
[4]
The adhesive film according to [3], which is used for electrically connecting connection terminals that are opposed to each other.
[5]
The adhesive film according to [3] or [4], wherein the insulating adhesive layer and / or the conductive adhesive layer includes a film forming material, an epoxy resin, and a latent curing agent.
[6]
The adhesive film according to [3] or [4], wherein the insulating adhesive layer and / or the conductive adhesive layer contains an epoxy resin and a latent curing agent.
[7]
The adhesive film according to [3] or [4], which is used for COG (Chip-On-Glass) mounting or COF (Chip-On-Flex) mounting.

以下、実施例により本発明を詳細に説明するが、本発明はこれに限定されるものではない。なお、下記の実施例において、ビスフェノールＦ型フェノキシ樹脂は東都化成株式会社製、商品名「ＦＸ−３１６」、ビスフェノールＡ型フェノキシ樹脂はインケムコーポレーション社製、商品名「ＰＫＨＣ」、ビスフェノールＡ・Ｆ共重合型フェノキシ樹脂は東都化成株式会社製、商品名「ＺＸ−１３５６−２」、芳香族スルホニウム塩は三新化学工業株式会社製、商品名「サンエイドＳＩ−６０」をそれぞれ用いた。また、液状エポキシとして、マイクロカプセル型潜在性硬化剤を含有する液状エポキシ（旭化成ケミカルズ社製、商品名「ノバキュアＨＸ−３９４１」、エポキシ当量１８５）を用いた。   EXAMPLES Hereinafter, although an Example demonstrates this invention in detail, this invention is not limited to this. In the following examples, bisphenol F type phenoxy resin is manufactured by Toto Kasei Co., Ltd., trade name “FX-316”, and bisphenol A type phenoxy resin is manufactured by Inchem Corporation, trade names “PKHC”, bisphenol A · F. The copolymerized phenoxy resin was manufactured by Tohto Kasei Co., Ltd., trade name “ZX-1356-2”, and the aromatic sulfonium salt was manufactured by Sanshin Chemical Industry Co., Ltd., trade name “Sun Aid SI-60”. Moreover, the liquid epoxy (Asahi Kasei Chemicals make, brand name "Novacure HX-3941", epoxy equivalent 185) containing a microcapsule-type latent hardener was used as a liquid epoxy.

（実施例１）
ビスフェノールＦ型フェノキシ樹脂１００ｇを、質量比５０：５０のトルエン（沸点１１０．６℃、ＳＰ値８．９０）と酢酸エチル（沸点７７．１℃、ＳＰ値９．１０）との混合溶剤に溶解させ、固形分６０質量％の溶液を得た。その溶液に、液状エポキシを配合し、更に潜在性硬化剤として芳香族スルホニウム塩２．４ｇを添加して混合液を得た。なお、上記液状エポキシは、ビスフェノールＦ型フェノキシ樹脂：液状エポキシが固形質量比で６０：４０となる量を配合した。得られた混合液を、厚み５０μｍの片面がシリコーンで表面処理されたＰＥＴフィルムに塗工装置を用いて塗布した後、７０℃、５分間の熱風乾燥により、厚みが１０μｍの絶縁性接着層を形成した。 Example 1
Dissolve 100 g of bisphenol F-type phenoxy resin in a mixed solvent of toluene (boiling point 110.6 ° C., SP value 8.90) and ethyl acetate (boiling point 77.1 ° C., SP value 9.10) with a mass ratio of 50:50. To obtain a solution having a solid content of 60% by mass. Liquid epoxy was added to the solution, and 2.4 g of aromatic sulfonium salt was added as a latent curing agent to obtain a mixed solution. In addition, the said liquid epoxy mix | blended the quantity from which bisphenol F type phenoxy resin: liquid epoxy will be 60:40 by solid mass ratio. The obtained mixed liquid was applied to a PET film having a surface treated with silicone on a surface of 50 μm using a coating apparatus, and then dried with hot air at 70 ° C. for 5 minutes to form an insulating adhesive layer having a thickness of 10 μm. Formed.

また、ビスフェノールＡ型フェノキシ樹脂５０ｇを、質量比５０：５０のトルエンと酢酸エチルとの混合溶剤に溶解させ、固形分４０質量％の第１の溶液を得た。一方、ビスフェノールＡ・Ｆ共重合型フェノキシ樹脂５０ｇを、質量比５０：５０のトルエンと酢酸エチルとの混合溶剤に溶解させ、固形分４５質量％の第２の溶液を得た。   Further, 50 g of bisphenol A type phenoxy resin was dissolved in a mixed solvent of toluene and ethyl acetate having a mass ratio of 50:50 to obtain a first solution having a solid content of 40% by mass. On the other hand, 50 g of bisphenol A / F copolymer phenoxy resin was dissolved in a mixed solvent of toluene and ethyl acetate having a mass ratio of 50:50 to obtain a second solution having a solid content of 45 mass%.

上述の第１及び第２の溶液を混合し、その混合液に更に液状エポキシを配合した。これらはビスフェノールＡ型フェノキシ樹脂：ビスフェノールＡ・Ｆ共重合型フェノキシ樹脂：液状エポキシが固形質量比で３０：３０：４０となる量で配合した。得られた配合液に更に導電粒子を樹脂成分に対して１０体積％配合して分散し、更に潜在性硬化剤として芳香族スルホニウム塩２．４ｇを添加して分散液を得た。得られた分散液を、厚み５０μｍの片面がシリコーンで表面処理されたＰＥＴフィルムに塗工装置を用いて塗布した後、７０℃、５分間の熱風乾燥により、厚みが１０μｍの導電性接着層を形成した。形成した絶縁性接着層と導電性接着層とをラミネーターを用いて貼り合わせ、ＰＥＴフィルムで挟まれた接着フィルムを得た。   The first and second solutions described above were mixed, and liquid epoxy was further added to the mixed solution. These were blended in such an amount that the bisphenol A type phenoxy resin: bisphenol A / F copolymer type phenoxy resin: liquid epoxy had a solid mass ratio of 30:30:40. The obtained blended liquid was further mixed with 10% by volume of conductive particles with respect to the resin component and dispersed, and 2.4 g of aromatic sulfonium salt was added as a latent curing agent to obtain a dispersion. After applying the obtained dispersion to a PET film having a thickness of 50 μm on one surface treated with silicone using a coating apparatus, the conductive adhesive layer having a thickness of 10 μm is formed by drying with hot air at 70 ° C. for 5 minutes. Formed. The formed insulating adhesive layer and conductive adhesive layer were bonded using a laminator to obtain an adhesive film sandwiched between PET films.

（実施例２）
絶縁性接着層の形成を下記のように代えた以外は、実施例１と同様にしてＰＥＴフィルム付接着フィルムを得た。ビスフェノールＦ型フェノキシ樹脂１００ｇを、質量比５０：５０のトルエンと酢酸エチルとの混合溶剤に溶解させ、固形分６０質量％の第１の溶液を得た。一方、ビスフェノールＡ・Ｆ共重合型フェノキシ樹脂５０ｇを、質量比５０：５０のトルエンと酢酸エチルとの混合溶剤に溶解させ、固形分４５質量％の第２の溶液を得た。上述の第１及び第２の溶液を混合し、その混合液に更に液状エポキシを配合した。これらはビスフェノールＦ型フェノキシ樹脂：ビスフェノールＡ・Ｆ共重合型フェノキシ樹脂：液状エポキシが固形質量比で３０：３０：４０となる量で配合した。得られた配合液に更に潜在性硬化剤として芳香族スルホニウム塩２．４ｇを添加して混合液を得た。得られた混合液を、厚み５０μｍの片面がシリコーンで表面処理されたＰＥＴフィルムに塗工装置を用いて塗布した後、７０℃、５分間の熱風乾燥により、厚みが１０μｍの絶縁性接着層を形成した。 (Example 2)
An adhesive film with a PET film was obtained in the same manner as in Example 1 except that the formation of the insulating adhesive layer was changed as follows. 100 g of bisphenol F type phenoxy resin was dissolved in a mixed solvent of toluene and ethyl acetate having a mass ratio of 50:50 to obtain a first solution having a solid content of 60% by mass. On the other hand, 50 g of bisphenol A / F copolymer phenoxy resin was dissolved in a mixed solvent of toluene and ethyl acetate having a mass ratio of 50:50 to obtain a second solution having a solid content of 45 mass%. The first and second solutions described above were mixed, and liquid epoxy was further added to the mixed solution. These were blended in such an amount that bisphenol F type phenoxy resin: bisphenol A / F copolymerization type phenoxy resin: liquid epoxy was 30:30:40 in terms of solid mass ratio. To the obtained blended liquid, 2.4 g of aromatic sulfonium salt was further added as a latent curing agent to obtain a mixed liquid. The obtained mixed liquid was applied to a PET film having a surface treated with silicone on a surface of 50 μm using a coating apparatus, and then dried with hot air at 70 ° C. for 5 minutes to form an insulating adhesive layer having a thickness of 10 μm. Formed.

（比較例１）
ビスフェノールＡ型フェノキシ樹脂５０ｇを、質量比５０：５０のトルエンと酢酸エチルとの混合溶剤に溶解させ、固形分４０質量％の第１の溶液を得た。一方、ビスフェノールＡ・Ｆ共重合型フェノキシ樹脂５０ｇを、質量比５０：５０のトルエンと酢酸エチルとの混合溶剤に溶解させ、固形分４５質量％の第２の溶液を得た。上述の第１及び第２の溶液を混合し、その混合液に更に液状エポキシを配合した。これらはビスフェノールＡ型フェノキシ樹脂：ビスフェノールＡ・Ｆ共重合型フェノキシ樹脂：液状エポキシが固形質量比で３０：３０：４０となる量で配合した。得られた配合液に更に潜在性硬化剤として芳香族スルホニウム塩２．４ｇを添加して混合液を得た。得られた混合液を、厚み５０μｍの片面がシリコーンで表面処理されたＰＥＴフィルムに塗工装置を用いて塗布した後、７０℃、５分間の熱風乾燥により、厚みが１０μｍの絶縁性接着層を形成した。 (Comparative Example 1)
50 g of bisphenol A type phenoxy resin was dissolved in a mixed solvent of toluene and ethyl acetate having a mass ratio of 50:50 to obtain a first solution having a solid content of 40% by mass. On the other hand, 50 g of bisphenol A / F copolymer phenoxy resin was dissolved in a mixed solvent of toluene and ethyl acetate having a mass ratio of 50:50 to obtain a second solution having a solid content of 45 mass%. The first and second solutions described above were mixed, and liquid epoxy was further added to the mixed solution. These were blended in such an amount that the bisphenol A type phenoxy resin: bisphenol A / F copolymer type phenoxy resin: liquid epoxy had a solid mass ratio of 30:30:40. To the obtained blended liquid, 2.4 g of aromatic sulfonium salt was further added as a latent curing agent to obtain a mixed liquid. The obtained mixed liquid was applied to a PET film having a surface treated with silicone on a surface of 50 μm using a coating apparatus, and then dried with hot air at 70 ° C. for 5 minutes to form an insulating adhesive layer having a thickness of 10 μm. Formed.

ビスフェノールＦ型フェノキシ樹脂１００ｇを、質量比５０：５０のトルエンと酢酸エチルとの混合溶剤に溶解させ、固形分６０質量％の第１の溶液を得た。一方、ビスフェノールＡ・Ｆ共重合型フェノキシ樹脂５０ｇを、質量比５０：５０のトルエンと酢酸エチルとの混合溶剤に溶解させ、固形分４５質量％の第２の溶液を得た。上述の第１及び第２の溶液を混合し、その混合液に更に液状エポキシを配合した。これらはビスフェノールＦ型フェノキシ樹脂：ビスフェノールＡ・Ｆ共重合型フェノキシ樹脂：液状エポキシが固形質量比で３０：３０：４０となる量で配合した。得られた配合液に更に導電粒子を樹脂成分に対して１０体積％配合して分散し、更に潜在性硬化剤として芳香族スルホニウム塩２．４ｇを添加して分散液を得た。得られた分散液を、厚み５０μｍの片面がシリコーンで表面処理されたＰＥＴフィルムに塗工装置を用いて塗布した後、７０℃、５分間の熱風乾燥により、厚みが１０μｍの導電性接着層を形成した。形成した絶縁性接着層と導電性接着層とをラミネーターを用いて貼り合わせ、ＰＥＴフィルムで挟まれた接着フィルムを得た。   100 g of bisphenol F type phenoxy resin was dissolved in a mixed solvent of toluene and ethyl acetate having a mass ratio of 50:50 to obtain a first solution having a solid content of 60% by mass. On the other hand, 50 g of bisphenol A / F copolymer phenoxy resin was dissolved in a mixed solvent of toluene and ethyl acetate having a mass ratio of 50:50 to obtain a second solution having a solid content of 45 mass%. The first and second solutions described above were mixed, and liquid epoxy was further added to the mixed solution. These were blended in such an amount that bisphenol F type phenoxy resin: bisphenol A / F copolymerization type phenoxy resin: liquid epoxy was 30:30:40 in terms of solid mass ratio. The obtained blended liquid was further mixed with 10% by volume of conductive particles with respect to the resin component and dispersed, and 2.4 g of aromatic sulfonium salt was added as a latent curing agent to obtain a dispersion. After applying the obtained dispersion to a PET film having a thickness of 50 μm on one surface treated with silicone using a coating apparatus, the conductive adhesive layer having a thickness of 10 μm is formed by drying with hot air at 70 ° C. for 5 minutes. Formed. The formed insulating adhesive layer and conductive adhesive layer were bonded using a laminator to obtain an adhesive film sandwiched between PET films.

（比較例２）
絶縁性接着層を下記のように形成したこと以外は、実施例１と同様にしてＰＥＴフィルム付接着フィルムを得た。ビスフェノールＦ型フェノキシ樹脂１００ｇを、質量比５０：５０のトルエンと酢酸エチルとの混合溶剤に溶解させ、固形分６０質量％の溶液を得た。その溶液に、液状エポキシを配合して混合液を得た。なお、上記液状エポキシは、ビスフェノールＦ型フェノキシ樹脂：液状エポキシが固形質量比で６０：４０となる量を配合した。得られた混合液を、潜在性硬化剤である芳香族スルホニウム塩を添加せずに、厚み５０μｍの片面がシリコーンで表面処理されたＰＥＴフィルムに塗工装置を用いて塗布した後、７０℃、５分間の熱風乾燥により、厚みが１０μmの絶縁性接着層を形成した。 (Comparative Example 2)
An adhesive film with a PET film was obtained in the same manner as in Example 1 except that the insulating adhesive layer was formed as follows. 100 g of bisphenol F-type phenoxy resin was dissolved in a mixed solvent of toluene and ethyl acetate having a mass ratio of 50:50 to obtain a solution having a solid content of 60% by mass. Liquid epoxy was blended with the solution to obtain a mixed solution. In addition, the said liquid epoxy mix | blended the quantity from which bisphenol F type phenoxy resin: liquid epoxy will be 60:40 by solid mass ratio. After the obtained mixed liquid was applied to a PET film having one surface treated with silicone with a thickness of 50 μm using a coating apparatus without adding an aromatic sulfonium salt which is a latent curing agent, 70 ° C., An insulating adhesive layer having a thickness of 10 μm was formed by drying with hot air for 5 minutes.

（回路部材の接続構造の形成）
実施例１、２及び比較例１、２の接着フィルムをそれぞれ用いて、回路部材の接続構造を作製した。詳細には、まず、接着フィルムの導電性接着層側のＰＥＴフィルムを剥離除去して、導電性接着層の表面を露出した。次に、厚み０．５ｍｍのガラス上にＩＴＯ膜を蒸着により形成してＩＴＯ基板（表面抵抗＜２０Ω／□）を得た。次いで、ＩＴＯ膜の表面に上記接着フィルムの導電性接着層の表面を向かい合わせて接触させながら、７０℃、０．５ＭＰａ、３秒間の条件でそれらの積層方向に加熱加圧して、ＩＴＯ基板に接着フィルムを仮固定した。その後、接着フィルムからもう一方のＰＥＴフィルムを剥離除去した。次に、バンプ面積３０μｍ×５０μｍ、ピッチ４０μｍ、高さ１５μｍの２列（千鳥配列）の金バンプを設けたＩＣチップを上記接着フィルム上に載置した。ＩＣチップを載置した接着フィルムを石英ガラス及び加圧ヘッドで挟み、１６０℃、１００ＭＰａ、１０秒間の条件で加熱加圧することにより、ＩＴＯ基板とＩＣチップとを接続して回路部材の接続構造を作製した。 (Formation of circuit member connection structure)
Circuit member connection structures were prepared using the adhesive films of Examples 1 and 2 and Comparative Examples 1 and 2, respectively. Specifically, first, the PET film on the conductive adhesive layer side of the adhesive film was peeled and removed to expose the surface of the conductive adhesive layer. Next, an ITO film was formed by vapor deposition on a glass having a thickness of 0.5 mm to obtain an ITO substrate (surface resistance <20Ω / □). Next, while the surface of the conductive adhesive layer of the adhesive film is brought into contact with the surface of the ITO film face-to-face, it is heated and pressed in the laminating direction under the conditions of 70 ° C., 0.5 MPa, and 3 seconds to form an ITO substrate. The adhesive film was temporarily fixed. Thereafter, the other PET film was peeled off from the adhesive film. Next, an IC chip provided with two rows (staggered arrangement) of gold bumps having a bump area of 30 μm × 50 μm, a pitch of 40 μm, and a height of 15 μm was placed on the adhesive film. An adhesive film on which an IC chip is placed is sandwiched between quartz glass and a pressure head, and heated and pressed under the conditions of 160 ° C., 100 MPa, and 10 seconds to connect the ITO substrate and the IC chip, thereby connecting the circuit members. Produced.

（バンプ−ガラス基板配線間捕捉粒子数の測定）
上述の接続構造について、ＩＴＯ基板のガラス側から金属顕微鏡（倍率５００倍）で３０μｍ×５０μｍの領域を２００ヶ所観察して、ＩＴＯ基板と金バンプに挟まれた導電粒子の数をカウントした。そして、一領域当たりの導電粒子の数を相加平均により求めた。その結果を表１に示す。 (Measurement of the number of trapped particles between bump and glass substrate wiring)
About the above-mentioned connection structure, 200 areas of 30 μm × 50 μm were observed from the glass side of the ITO substrate with a metal microscope (500 times magnification), and the number of conductive particles sandwiched between the ITO substrate and the gold bumps was counted. And the number of the electrically-conductive particles per area | region was calculated | required by the arithmetic mean. The results are shown in Table 1.

（接続抵抗の測定）
実施例１、２及び比較例１、２の接着フィルムを用いて得られた回路部材の接続構造について、その接続部の電気抵抗値を、初期と、高温高湿槽（８５℃８５％ＲＨ環境下）中に５００時間保持した後とにおいて、４端子測定法を用いマルチメータで測定した。その結果を表１に示す。 (Measurement of connection resistance)
About the connection structure of the circuit member obtained using the adhesive films of Examples 1 and 2 and Comparative Examples 1 and 2, the electrical resistance value of the connection part was set to the initial value and the high temperature and high humidity tank (85 ° C. and 85% RH environment (Lower) After being held for 500 hours, it was measured with a multimeter using a four-terminal measurement method. The results are shown in Table 1.

（Ｃ／Ｄの値の測定）
実施例１，２及び比較例１、２の接着フィルムをφ５．５ｍｍの円板状に切り出した。次いで切り出した接着フィルムを、厚み０．７ｍｍ、１５ｍｍ×１５ｍｍの２枚のガラス板に挟み、１６０℃、２ＭＰａ、１０秒間の条件で加熱加圧を行った。加熱加圧前の接着フィルムの主面の面積Ａと、加熱加圧後の硬化した絶縁性接着層の主面の面積ＣとからＣ／Ａの値を求めた。さらに加熱加圧前の接着フィルムの主面の面積Ａと加熱加圧後の硬化した導電性接着層の主面の面積Ｄとから、導電性接着層のＤ／Ａの値を求め、Ｃ／Ａの値をＤ／Ａの値で除することにより、Ｃ／Ｄの値を算出した。その結果を表１に示す。
なお、上記主面の面積Ｃ及びＤは、ガラス板の加熱加圧後の硬化した接着フィルムの広がりを、スキャナー等を用いて撮像し、画像処理装置を用いて求めた。面積Ｃは、接着フィルムの最外周によって囲まれた部分の面積であり、面積Ｄは、最外周の内側の周によって囲まれた部分の面積である。これらは、最外周と最外周の内側の周との間の部分が、肉眼では白色透明に、スキャナーで撮像したときには薄青色に見え、また、最外周の内側の周の内側の部分が、肉眼では黒っぽく、スキャナーで撮像したときには白色に見えるので区別できる。加熱加圧後の硬化した接着フィルムをスキャナーで撮像した像を、図２に示す。なお、図２に示す硬化した接着フィルムの最外周の直径は約９ｍｍである。 (Measurement of C / D value)
The adhesive films of Examples 1 and 2 and Comparative Examples 1 and 2 were cut into a disk shape of φ5.5 mm. Next, the cut out adhesive film was sandwiched between two glass plates having a thickness of 0.7 mm and 15 mm × 15 mm, and heated and pressed under the conditions of 160 ° C., 2 MPa, and 10 seconds. The value of C / A was determined from the area A of the main surface of the adhesive film before heating and pressing and the area C of the main surface of the cured insulating adhesive layer after heating and pressing. Further, from the area A of the main surface of the adhesive film before heating and pressing and the area D of the main surface of the cured conductive adhesive layer after heating and pressing, the value of D / A of the conductive adhesive layer is obtained. The value of C / D was calculated by dividing the value of A by the value of D / A. The results are shown in Table 1.
The areas C and D of the main surface were obtained by imaging the spread of the cured adhesive film after heating and pressing the glass plate using a scanner or the like and using an image processing apparatus. Area C is the area of the portion surrounded by the outermost periphery of the adhesive film, and area D is the area of the portion surrounded by the inner periphery of the outermost periphery. These parts appear white transparent to the naked eye and light blue when imaged with a scanner, and the inner part of the outermost inner periphery is visible to the naked eye. Then, it is blackish and can be distinguished because it looks white when taken with a scanner. An image obtained by imaging the cured adhesive film after heating and pressing with a scanner is shown in FIG. Note that the diameter of the outermost periphery of the cured adhesive film shown in FIG. 2 is about 9 mm.

１０…第１の回路部材、１１…第１の回路基板、１２…第１の電極、２０…第２の回路部材、２１…第２の回路基板、２２…第２の電極、３０…回路接続部材、１００…接続構造。   DESCRIPTION OF SYMBOLS 10 ... 1st circuit member, 11 ... 1st circuit board, 12 ... 1st electrode, 20 ... 2nd circuit member, 21 ... 2nd circuit board, 22 ... 2nd electrode, 30 ... Circuit connection Member, 100 ... connection structure.

Claims (11)

導電粒子を含有する導電性接着層と、絶縁性接着層と、が積層されており、
前記絶縁性接着層が、ビスフェノールＦ型フェノキシ樹脂を含有する、接着フィルム。 A conductive adhesive layer containing conductive particles and an insulating adhesive layer are laminated,
An adhesive film in which the insulating adhesive layer contains a bisphenol F-type phenoxy resin. 前記導電性接着層が、ビスフェノールＡ型フェノキシ樹脂及びビスフェノールＡ・Ｆ共重合型フェノキシ樹脂からなる群より選択される少なくとも１種の樹脂を含有する、請求項１に記載の接着フィルム。   The adhesive film according to claim 1, wherein the conductive adhesive layer contains at least one resin selected from the group consisting of a bisphenol A type phenoxy resin and a bisphenol A / F copolymer type phenoxy resin. 相対峙する接続端子間を電気的に接続するために用いられる、請求項１又は２に記載の接着フィルム。   The adhesive film of Claim 1 or 2 used in order to electrically connect between the connection terminals which face each other. ４０℃、周波数１０Ｈｚにおける前記接着フィルムの硬化物の貯蔵弾性率Ｅ’が０．５〜２．５ＧＰａである、請求項１〜３のいずれか一項に記載の接着フィルム。   The adhesive film as described in any one of Claims 1-3 whose storage elastic modulus E 'of the hardened | cured material of the said adhesive film in 40 degreeC and a frequency of 10 Hz is 0.5-2.5 GPa. 積層方向に所定の条件で加熱加圧した後の、硬化した絶縁性接着層の主面の面積Ｃを、硬化した導電性接着層の主面の面積Ｄで除した値Ｃ／Ｄが１．２〜３．０である、請求項１〜４のいずれか一項に記載の接着フィルム。   A value C / D obtained by dividing the area C of the main surface of the cured insulating adhesive layer after being heated and pressed under predetermined conditions in the stacking direction by the area D of the main surface of the cured conductive adhesive layer is 1. The adhesive film according to any one of claims 1 to 4, which is 2 to 3.0. 前記絶縁性接着層及び／又は前記導電性接着層が、フィルム形成材、エポキシ樹脂及び潜在性硬化剤を含む、請求項１〜５のいずれか一項に記載の接着フィルム。   The adhesive film according to claim 1, wherein the insulating adhesive layer and / or the conductive adhesive layer includes a film forming material, an epoxy resin, and a latent curing agent. 第１の接続端子を有する第１の回路部材と、
第２の接続端子を有する第２の回路部材とを、
前記第１の接続端子と前記第２の接続端子とを対向して配置し、
対向配置した前記第１の接続端子と前記第２の接続端子との間に、請求項１〜６のいずれか一項に記載の接着フィルムを介在させ、加熱加圧して、前記第１の接続端子と前記第２の接続端子とを電気的に接続させてなる、回路部材の接続構造。 A first circuit member having a first connection terminal;
A second circuit member having a second connection terminal;
The first connection terminal and the second connection terminal are arranged to face each other,
The adhesive film according to any one of claims 1 to 6 is interposed between the first connection terminal and the second connection terminal that are arranged to face each other, and the first connection terminal is heated and pressed. A circuit member connection structure in which a terminal and the second connection terminal are electrically connected. 前記第１及び第２の回路部材のうち少なくとも一方がＩＣチップである、請求項７記載の接続構造。   The connection structure according to claim 7, wherein at least one of the first and second circuit members is an IC chip. 前記第１及び第２の接続端子のうち少なくとも一方の表面が、金、銀、錫、白金族の金属及びインジウム−錫酸化物からなる群より選ばれる少なくとも１種を含む、請求項７又は８記載の接続構造。   The surface of at least one of the first and second connection terminals includes at least one selected from the group consisting of gold, silver, tin, a platinum group metal, and indium-tin oxide. The connection structure described. 前記第１及び第２の回路部材のうち少なくとも一方の表面が、窒化シリコン、シリコーン化合物及びポリイミド樹脂からなる群より選ばれる少なくとも１種でコーティング又は付着処理されている、請求項７〜９のいずれか一項に記載の接続構造。   The surface of at least one of the first and second circuit members is coated or adhered with at least one selected from the group consisting of silicon nitride, silicone compound, and polyimide resin. The connection structure according to claim 1. 第１の接続端子を有する第１の回路部材と、
第２の接続端子を有する第２の回路部材とを、
前記第１の接続端子と前記第２の接続端子とを対向して配置し、
対向配置した前記第１の接続端子と前記第２の接続端子との間に、請求項１〜６のいずれか一項に記載の接着フィルムを介在させ、加熱加圧して、対向配置した前記第１の接続端子と前記第２の接続端子とを電気的に接続させる、回路部材の接続方法。 A first circuit member having a first connection terminal;
A second circuit member having a second connection terminal;
The first connection terminal and the second connection terminal are arranged to face each other,
The adhesive film according to any one of claims 1 to 6 is interposed between the first connection terminal and the second connection terminal arranged to face each other, and heated and pressed to arrange the first connection terminals. A method for connecting circuit members, wherein the first connection terminal and the second connection terminal are electrically connected.
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Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3656768B2 (en) * 1995-02-07 2005-06-08 日立化成工業株式会社 Connection member, electrode connection structure using the connection member, and connection method
JP4339414B2 (en) * 1995-05-16 2009-10-07 日立化成工業株式会社 Circuit connection member
JP3603426B2 (en) * 1995-11-21 2004-12-22 日立化成工業株式会社 Connection member for circuit
JP3651624B2 (en) * 1995-11-21 2005-05-25 日立化成工業株式会社 Circuit connection member
TWI235759B (en) * 1996-07-15 2005-07-11 Hitachi Chemical Co Ltd Multi-layered adhesive for connecting circuit and circuit board
TW383435B (en) * 1996-11-01 2000-03-01 Hitachi Chemical Co Ltd Electronic device
WO1998038261A1 (en) * 1997-02-27 1998-09-03 Seiko Epson Corporation Adhesive, liquid crystal device, method of manufacturing liquid crystal device, and electronic apparatus
JP3678547B2 (en) * 1997-07-24 2005-08-03 ソニーケミカル株式会社 Multilayer anisotropic conductive adhesive and method for producing the same
JP2002201450A (en) * 2000-12-28 2002-07-19 Hitachi Chem Co Ltd Adhesive composition, connecting method of circuit terminal using the same, and connected structure of circuit terminal
CN100513507C (en) * 2001-11-16 2009-07-15 日立化成工业株式会社 Adhesive for circuit connection
JP4411876B2 (en) * 2003-06-23 2010-02-10 東レ株式会社 Adhesive composition for semiconductor device, adhesive sheet and coverlay film using the same, and copper-clad polyimide film
CN101232128B (en) * 2003-06-25 2010-12-08 日立化成工业株式会社 Circuit connecting material, circuit member connecting structure, and method of producing the same
US20100025089A1 (en) * 2004-01-07 2010-02-04 Jun Taketatsu Circuit connection material, film-shaped circuit connection material using the same, circuit member connection structure, and manufacturing method thereof
JP2005194413A (en) * 2004-01-08 2005-07-21 Hitachi Chem Co Ltd Adhesive film for circuit connection and circuit connection structure
KR100671138B1 (en) * 2005-03-07 2007-01-17 제일모직주식회사 An anisotropic conductive film and the display element thereof
JP2007217503A (en) * 2006-02-15 2007-08-30 Asahi Kasei Electronics Co Ltd Anisotropically electroconductive adhesive film

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