TW201217566A - Coated article and method for making the same - Google Patents

Coated article and method for making the same Download PDF

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TW201217566A
TW201217566A TW99136034A TW99136034A TW201217566A TW 201217566 A TW201217566 A TW 201217566A TW 99136034 A TW99136034 A TW 99136034A TW 99136034 A TW99136034 A TW 99136034A TW 201217566 A TW201217566 A TW 201217566A
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Taiwan
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layer
substrate
alloy
layers
underlayer
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TW99136034A
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Chinese (zh)
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Hsin-Pei Chang
Wen-Rong Chen
Huan-Wu Chiang
Cheng-Shi Chen
Cong Li
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Hon Hai Prec Ind Co Ltd
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Priority to TW99136034A priority Critical patent/TW201217566A/en
Publication of TW201217566A publication Critical patent/TW201217566A/en

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Abstract

A coated article with durable antibacterial effect is provided. The coated article includes a substrate, a base layer formed on the substrate, a plurality of SiO2 layers and a plurality of Cu-Zn alloy layers formed on the base layer. The base layer is a silicon layer. Each one of the SiO2 layers and each one of the Cu-Zn alloy layers are deposited on each other. A portion of each Cu-Zn alloy layer embeds into each adjacent SiO2 layer due to porous structure of the SiO2 layer, which leads the Cu and Zn ions release slowly. So the coated article has long-lasting antibacterial effect. A method for making the coated article is also provided.

Description

201217566 六、發明說明: 【發明所屬之技術領威】 [0001] 本發明涉及一種鍍膜件及該鍍膜件的製備方法。 【先前技術·】 [〇〇〇2]有害細菌的傳播和感染嚴重咸脅著人類的健康,尤其近 年來SARS病毒、禽流感等的傳播和感染,使抗菌材料在 曰常生活中的應用迅速發展起來。將抗菌金屬(Cu ' Zn、 Ag等)塗覆於基材上形成抗菌鍍膜件在目前市場上有著廣 泛的應用。該抗菌鍍膜件的殺菌機理為:鍍膜件在使用 過程中,抗菌金屬塗層會缓慢棒放出金屬雜子如^2+、 Zn2+,當微量的具有殺菌性的金屬離子與細菌等微生物 接觸時,該金屬離子依靠庫倫力與帶有負電荷的微生物 牢固吸附,金屬離子穿透細胞壁與細菌體内蛋白質上的 巯基、氨基發生反應,使蛋白質活性破壞,使細胞喪失 分裂增殖能力而死亡,從而達到殺菌的目的。 [〇〇〇3]然該類金屬抗菌塗層厚度通常比較薄,且表面硬度較低 容易磨損,從而降低了金屬抗菌拿層的抗菌持久性。 【發明内容】 [0004] 有鑒於此’有必要提供一種抗菌效果較為持久的鍵膜件 〇 [0005] 另外,還有必要提供一種上述鍍膜件的製備方法。 [0006] —種鍍膜件,其包括基材、形成於基材表面的打底層, 該打底層為Si層,該鍍膜件還包括形成於打底層表面的 複數8丨〇2層和複數Cu-Zn合金層’該複數81〇層和複數 2 099136034 表單編號A0101 第4頁/共11頁 0992062999-0 201217566201217566 VI. Description of the Invention: [Technical Leadership of Invention] [0001] The present invention relates to a coated member and a method of preparing the coated member. [Previous technology] [〇〇〇2] The spread and infection of harmful bacteria is a serious threat to human health, especially in recent years, the spread and infection of SARS virus, avian flu, etc., making the application of antibacterial materials in the daily life Developed. The application of antibacterial metals (Cu'Zn, Ag, etc.) to substrates to form antibacterial coated parts has a wide range of applications on the market. The sterilization mechanism of the antibacterial coating member is: during the use of the coating member, the antibacterial metal coating will slowly release metal impurities such as ^2+, Zn2+, when a trace amount of bactericidal metal ions are in contact with microorganisms such as bacteria. The metal ion is strongly adsorbed by the coulombic force and the negatively charged microorganism, and the metal ion penetrates the cell wall to react with the sulfhydryl group and the amino group of the protein in the bacteria, thereby destroying the activity of the protein and causing the cell to lose its ability to divide and proliferate and die. The purpose of sterilization. [〇〇〇3] However, the thickness of the metal antibacterial coating is usually relatively thin, and the surface hardness is low, which is easy to wear, thereby reducing the antibacterial durability of the metal antibacterial layer. SUMMARY OF THE INVENTION [0004] In view of the above, it is necessary to provide a key film member having a relatively long-lasting antibacterial effect. [0005] In addition, it is also necessary to provide a method for preparing the above-mentioned coated member. [0006] A coated member comprising a substrate, a primer layer formed on a surface of the substrate, the primer layer being a Si layer, the coating member further comprising a plurality of layers 8 and 2 formed on the surface of the primer layer and a plurality of Cu- Zn alloy layer 'The complex 81 〇 layer and plural 2 099136034 Form No. A0101 Page 4 / Total 11 Page 0992062999-0 201217566

Cu-Zn合金層交替排布。 [0007] 一種鍍膜件的製備方法,其包括如下步驟: [0008] 提供一基材; [0009] 在該基材的表面形成打底層,該打底層為Si層; [0010] 在該打底層的表面形成Si〇2層; [0011] 在該Si〇2層的表面形成Cu-Zn合金層; [0012] 重複交替形成SiO層和Cu-Zn合金層以形成最外層為The Cu-Zn alloy layers are alternately arranged. [0007] A method for preparing a coated member, comprising the steps of: [0008] providing a substrate; [0009] forming a primer layer on a surface of the substrate, the primer layer being a Si layer; Forming a Si〇2 layer on the surface; forming a Cu-Zn alloy layer on the surface of the Si〇2 layer; [0012] repeatedly forming an SiO layer and a Cu-Zn alloy layer alternately to form an outermost layer

Si〇2層的鍵膜件。 [0013] 本發明所述鍍膜件在基材表面交替濺鍍Si〇2層和Cu-Zn合 金層,Si〇2B成為疏鬆多孔的結構,而使Cu-Zn合金層的 部分嵌·入到該Si〇2層中,對Cu-Zn合金層中Cu-Zn金屬離 子的快速溶出起到阻礙作用,從而可緩釋Cu-Zn金屬離子 的溶出,使Cu-Zn合金層具有長效的抗菌效果,相應地延 長了鍍膜件的使用壽命。 〇 【實施方式】 [0014] 請參閱圖1,本發明一較佳實施方式的鍍膜件100包括基 材10、形成於基材10表面的打底層20,形成於打底層20 表面的複數5丨〇2層30和複數Cu-Zn合金層40,該複數 Si〇2層30和複數Cu-Zn合金層40交替排布,其中與所述 打底層20直接相結合的為5丨〇2層30,最外層為3丨〇2層30 。本實施例中,所述複數3丨〇2層30和複數Cu-Zn合金層 40的層數可分別為5〜20。 [0015] 該基材10可為玻璃。 099136034 表單編號A0101 第5頁/共11頁 0992062999-0 201217566 [0016] 該打底層2 0可以磁控濺射的方式形成。該打底層為S i層 。該打底層20的厚度可為100〜200nm。 [0017] 該複數8丨〇2層30可以磁控濺射的方式形成。所述每一 Si〇2層30的厚度可為25〜50nm。濺鍵該8丨〇2層30時採用 較低的沉積溫度和沉積偏壓,使S i 0 2層3 0具有更好的疏 鬆多孔的結構,可使所述Cu-Zn合金層40的部分嵌入到該 51〇2層30 中。 [0018] 該複數Cu-Zn合金層40可以磁控濺射的方式形成。所述每 一Cu-Zn合金層40的厚度可為200〜300nm。在每一Cu-Zn合金層40與相鄰的每一 8丨〇2層30的介面處,有部分 Cu-Zn合金層40後入到8丨〇2層30中,從而對Cu-Zn合金 層40起到固持的作用,並可緩釋Cu-Zn金屬離子的溶出, 使Cu-Zn合金層40具有長效的抗菌效果。 [0019] 本發明一較佳實施方式的鍍膜件100的製備方法,其包括 如下步驟: [0020] 提供一基材10,該基材10的材質可為玻璃。 [0021] 對該基材10進行表面預處理。該表面預處理可包括常規 的對基材10進行拋光、無水乙醇超聲波清洗及烘乾等步 驟。 [0022] 對經上述處理後的基材10的表面進行氬氣電漿清洗,以 進一步去除基材10表面殘留的雜質,以及改善基材10表 面與後續鍍層的結合力。具體操作及工藝參數為:將基 材10放入一磁控滅射鍍膜機(圖未示)的鑛膜室内,將該 鑛膜室抽真空至3x10 5torr,然後向鑛膜室内通入流量 099136034 表單編號A0101 第6頁/共11頁 0992062999-0 201217566 為500sccm(標準狀態毫升/分鐘)的氬氣(純度為 99. 999%),並施加-200〜-800V的偏壓於基材10,對基 材10表面進行氬氣電漿清洗,清洗時間為3〜lOmin。 [0023] Ο [0024] Ο [0025] 099136034 採用磁控濺射法在經氬氣電漿清洗後的基材10的表面濺 鑛一打底層20,該打底層20可為Si層。濺鍍該打底層2〇 在所述磁控濺射鍍膜機中進行。使用Si靶,所述Si|e採 用直流磁控電源。濺鍍時,開啟Si靶,通入氬氣為工作 氣體’氬氣流量可為300〜500sccm,對基材施加偏壓可 為-50〜-100V,鍍膜室的溫度可為5〇〜85。〇,鍍膜時間 可為5〜lOmin。該打底層20的厚度可為100〜200nm。 繼續採用磁控濺射法在所述打底層2〇的表面濺鍍一 Si〇2 層30。使用金屬Si靶’所述Si靶橡用直流磁控電源。濺 鍍時,開啟Si靶,通入氧氣為反應氣體,氧氣流量可為 10〜25sccm,通入氬氣為工作氣體,氬氣流量可為12〇 〜200sccm,對基材施加直流偏壓可為-5q〜_15〇v,基 材的溫度可為50〜85°0,鍍膜時間可為2〜3min。該 Si〇2層30的厚度可為25〜50nm。滅鍵該SiO層30採用較 L· 低的沉積溫度和較低的沉積偏壓,可使Si〇2層3〇達到較 好的疏鬆多孔的結構。 繼續採用磁控滅射法在所述Si〇2層30的表面藏鑛一cu_ Zn合金層40 »使用鋼鋅合金靶,所述銅鋅合金靶中銅的 質量百分含量為80%〜90%,所述銅鋅合金乾採用射頻磁 控電源。濺鍍時,開啟銅鋅合金靶,通入氩氣為工作氣 體,氬軋流量可為20〜50sccm,對基材施加耦合脈衝偏 壓可為-180〜-350V,脈衝頻率為l〇KHz,脈衝寬度為 0992062999-0 表單編號Α0101 第7頁/共11页 201217566 20/zs,基材的溫度可為70〜130°C,鍍膜時間可為2〜 3min。該Cu-Zn合金層40的厚度可為200〜300nm。 [0026] 參照上述步驟,重複交替濺鍍8丨〇2層30和Cu-Zn合金層 40,且最外層為8丨〇2層30。交替濺鑛的次數總共可為5〜 20次。所述複數3丨〇2層30和複數Cu-Zn合金層40的總厚 度可為1〜8 # m。 [0027] 所述鍍膜件100在基材10表面交替濺鍍有3丨〇2層30和Cu-Zn合金層40,8丨〇2層30形成為疏鬆多孔的結構,可使 Cu-Zn合金層40的部分嵌入到該SiOg層30中,對Cu-Zn 合金層40中Cu-Zn金屬離子的快速溶出起到阻礙作用,從 而可緩釋Cu-Zn金屬離子的溶出,使Cu-Zn合金層40具有 長效的抗菌效果,相應地延長了鍍膜件100的使用壽命。 【圖式簡單說明】 [0028] 圖1為本發明一較佳實施例鍍膜件的剖視圖。 【主要元件符號說明】 [0029] 鍍膜件:100 [0030] 基材:10 [0031] 打底層:20 [0032] SiOJ : 30 [0033] Cu-Zn合金層:40 099136034 表單編號A0101 第8頁/共11頁 0992062999-0The key film member of the Si〇2 layer. [0013] The coated member of the present invention alternately sputters a layer of Si〇2 and a layer of Cu-Zn alloy on the surface of the substrate, and Si〇2B becomes a loose porous structure, and a portion of the Cu-Zn alloy layer is embedded therein. In the Si〇2 layer, the rapid dissolution of Cu-Zn metal ions in the Cu-Zn alloy layer is hindered, so that the dissolution of Cu-Zn metal ions can be sustained, and the Cu-Zn alloy layer has a long-lasting antibacterial effect. Correspondingly extend the service life of the coated parts. [0014] Referring to FIG. 1, a coated article 100 according to a preferred embodiment of the present invention includes a substrate 10, a primer layer 20 formed on the surface of the substrate 10, and a plurality of layers 5 formed on the surface of the primer layer 20. The 层 2 layer 30 and the plurality of Cu-Zn alloy layers 40, the plurality of Si 〇 2 layers 30 and the plurality of Cu Zn alloy layers 40 are alternately arranged, wherein the ruthenium layer 20 is directly combined with the 丨〇 2 layer 30 The outermost layer is 3丨〇2 layer 30. In this embodiment, the number of layers of the plurality of 3 2 layers 30 and the plurality of Cu-Zn alloy layers 40 may be 5 to 20, respectively. [0015] The substrate 10 can be glass. 099136034 Form No. A0101 Page 5 of 11 0992062999-0 201217566 [0016] The underlayer 20 can be formed by magnetron sputtering. The bottom layer is the S i layer. The underlayer 20 may have a thickness of 100 to 200 nm. [0017] The plurality of 8 丨〇 2 layers 30 can be formed by magnetron sputtering. Each of the Si 2 layers 30 may have a thickness of 25 to 50 nm. Sputtering the 8 丨〇 2 layer 30 uses a lower deposition temperature and deposition bias, so that the S i 0 2 layer 30 has a better porous structure, and the portion of the Cu-Zn alloy layer 40 can be made. Embed in the 51〇2 layer 30. [0018] The plurality of Cu-Zn alloy layers 40 may be formed by magnetron sputtering. Each of the Cu-Zn alloy layers 40 may have a thickness of 200 to 300 nm. At the interface of each Cu-Zn alloy layer 40 and each adjacent 8 丨〇 2 layer 30, a portion of the Cu-Zn alloy layer 40 is implanted into the 8 丨〇 2 layer 30, thereby bonding the Cu-Zn alloy. The layer 40 functions as a holding and can release the dissolution of Cu-Zn metal ions, so that the Cu-Zn alloy layer 40 has a long-lasting antibacterial effect. [0019] A method for preparing a coated member 100 according to a preferred embodiment of the present invention includes the following steps: [0020] A substrate 10 is provided, which may be made of glass. [0021] The substrate 10 is subjected to surface pretreatment. The surface pretreatment may include conventional steps of polishing the substrate 10, ultrasonic cleaning with anhydrous ethanol, and drying. [0022] The surface of the substrate 10 subjected to the above treatment is subjected to argon plasma cleaning to further remove impurities remaining on the surface of the substrate 10, and to improve the bonding force between the surface of the substrate 10 and the subsequent plating layer. The specific operation and process parameters are as follows: the substrate 10 is placed in a film chamber of a magnetron spray coating machine (not shown), the membrane chamber is evacuated to 3x10 5torr, and then the flow rate into the film chamber is 099136034. Form No. A0101 Page 6 of 11 0992062999-0 201217566 is 500 sccm (standard state ml/min) of argon (purity of 99.999%), and a bias of -200 to -800 V is applied to the substrate 10, The surface of the substrate 10 was subjected to argon plasma cleaning, and the cleaning time was 3 to 10 min. [0024] 99 [0025] 099136034 A surface layer 20 of a substrate 10 after argon plasma cleaning is sputtered by magnetron sputtering, and the underlayer 20 may be a Si layer. Sputtering the underlayer 2 is performed in the magnetron sputtering coater. A Si target is used, which uses a DC magnetron power supply. During sputtering, the Si target is turned on, and argon gas is supplied as the working gas. The flow rate of the argon gas may be 300 to 500 sccm, the bias voltage may be applied to the substrate to be -50 to -100 V, and the temperature of the coating chamber may be 5 to 85. 〇, the coating time can be 5~lOmin. The underlayer 20 may have a thickness of 100 to 200 nm. A Si〇2 layer 30 is sputtered on the surface of the underlying layer 2 by magnetron sputtering. A metal Si target is used. The Si target rubber is a DC magnetron power source. During sputtering, the Si target is turned on, oxygen is used as the reaction gas, the oxygen flow rate can be 10~25sccm, the argon gas is used as the working gas, the argon gas flow rate can be 12〇~200sccm, and the DC bias can be applied to the substrate. -5q~_15〇v, the substrate temperature can be 50~85°0, and the coating time can be 2~3min. The Si 〇 2 layer 30 may have a thickness of 25 to 50 nm. The SiO layer 30 has a deposition temperature lower than L· and a lower deposition bias, so that the Si 〇 2 layer 3 〇 can achieve a relatively loose porous structure. Continuing to use a magnetron killing method to deposit a cu_Zn alloy layer 40 on the surface of the Si〇2 layer 30. Using a steel-zinc alloy target, the copper content in the copper-zinc alloy target is 80% to 90% by mass. %, the copper-zinc alloy dry uses a radio frequency magnetic control power supply. During sputtering, the copper-zinc alloy target is turned on, and argon gas is used as the working gas. The flow rate of the argon rolling may be 20 to 50 sccm, and the coupling pulse bias voltage to the substrate may be -180 to -350 V, and the pulse frequency is l〇KHz. The pulse width is 0992062999-0 Form No. Α0101 Page 7 of 11 201217566 20/zs, the temperature of the substrate can be 70~130 °C, and the coating time can be 2~3min. The Cu-Zn alloy layer 40 may have a thickness of 200 to 300 nm. Referring to the above steps, the alternately sputtered 8 丨〇 2 layer 30 and the Cu-Zn alloy layer 40 are repeated, and the outermost layer is 8 丨〇 2 layers 30. The number of alternate splashes can be 5 to 20 times in total. The total thickness of the plurality of 3 丨〇 2 layers 30 and the plurality of Cu-Zn alloy layers 40 may be 1 to 8 # m. [0027] The coating member 100 is alternately sputtered on the surface of the substrate 10 with a layer of 3 2 layers and a Cu-Zn alloy layer 40, and the 8 layer 2 layer 30 is formed into a loose porous structure, and the Cu-Zn alloy can be formed. The portion of the layer 40 is embedded in the SiOg layer 30, which hinders the rapid dissolution of Cu-Zn metal ions in the Cu-Zn alloy layer 40, thereby facilitating the dissolution of Cu-Zn metal ions and making the Cu-Zn alloy. The layer 40 has a long-lasting antibacterial effect, correspondingly extending the useful life of the coated member 100. BRIEF DESCRIPTION OF THE DRAWINGS [0028] FIG. 1 is a cross-sectional view of a coated member according to a preferred embodiment of the present invention. [Main component symbol description] [0029] Coating member: 100 [0030] Substrate: 10 [0031] Underlayer: 20 [0032] SiOJ: 30 [0033] Cu-Zn alloy layer: 40 099136034 Form No. A0101 Page 8 / Total 11 pages 0992062999-0

Claims (1)

201217566 七、申請專利範圍: 1 · 一種鍍膜件,其包括基材、形成於基材表面的打底層,該 打底層為Si層,其改良在於:該鍍膜件還包括形成於打底 層表面的複數3丨〇2層和複數Cu-Zn合金層,該複數3丨〇2層 和複數Cu-Zn合金層交替排布。 2 .如申請專利範圍第1項所述之鍍膜件,其中所述基材為玻 璃。 3 ·如申請專利範圍第1項所述之錄膜件,其中所述打底層以 磁控賤射的方式形成’該打底層的厚度為100〜200nm。 .I ........ .... ... 4 .如申請專利範圍第1項所述之鍍膜捧,其中所述複數S i 0 2 層以磁控濺射的方式形成,所述每一Si〇2層的厚度為25 〜50nm 〇 5 .如申請專利範圍第1項所述之鍍膜件,其中所述複數 Cu-Zn合金層以磁控濺射的方式形成,所述每一Cu-Zn合 金層的厚度為200〜300nm。 6 .如申請專利範圍第1項所述之鍍膜件、其中鍍膜件中與所 述打底層直接相結合的為3丨〇2層,且該鍍膜件的最外層為 Si〇2 層。 7 .如申請專利範圍第1項所述之鍍膜件,其中所述複數Si〇2 層和複數Cu-Zn合金層的總厚度為1〜8βπι。 8 . —種鍍膜件的製備方法,其包括如下步驟: 提供一基材; 在該基材的表面形成打底層’該打底層為Si層; 在該打底層的表面形成Si〇2層; 在該Si〇2層的表面形成Cu-Zn合金層; 099136034 表單編號A0101 第9頁/共11頁 0992062999-0 201217566 重複交替形成SlG2層和Cu-zn合金層以形成最外層為Si〇 層的鍍膜件。201217566 VII. Patent application scope: 1 . A coated member comprising a substrate, a primer layer formed on a surface of the substrate, the underlayer being a Si layer, the improvement being: the coating member further comprising a plurality of layers formed on the surface of the primer layer The 3丨〇2 layer and the complex Cu-Zn alloy layer are alternately arranged in a plurality of 3丨〇2 layers and a plurality of Cu-Zn alloy layers. 2. The coated article of claim 1, wherein the substrate is glass. 3. The film recording member according to claim 1, wherein the underlayer is formed by magnetron sputtering. The thickness of the underlayer is 100 to 200 nm. The coating of the first aspect of the invention, wherein the plurality of layers S i 0 2 are formed by magnetron sputtering, The thickness of each of the Si 〇 2 layers is 25 〜 50 nm 〇 5. The coated member according to claim 1, wherein the plurality of Cu-Zn alloy layers are formed by magnetron sputtering. Each Cu-Zn alloy layer has a thickness of 200 to 300 nm. 6. The coated member according to claim 1, wherein the coated member is directly bonded to the underlayer, and the outermost layer of the coated member is a Si〇2 layer. 7. The coated article of claim 1, wherein the total thickness of the plurality of Si〇2 layers and the plurality of Cu-Zn alloy layers is 1 to 8βπι. 8. A method of preparing a coated member, comprising the steps of: providing a substrate; forming a primer layer on a surface of the substrate; the underlayer is a Si layer; forming a Si〇2 layer on the surface of the underlayer; The surface of the Si〇2 layer forms a Cu-Zn alloy layer; 099136034 Form No. A0101 Page 9 of 11 0992062999-0 201217566 Repeatly forming an S1G2 layer and a Cu-zn alloy layer to form a coating layer having an outermost layer of Si〇 layer Pieces. 10 . 如申請專利範圍第8項所述之鑛膜件的製備方法,其中形 成所述打底層的步驟採用如下方式實現:制磁控滅射法 使用Si乾’以氬氣為工作氣體,氮氣流量為则〜 500sCCm,對基材施加偏壓為_5〇〜_i5〇v,鍍膜室的溫 度為50〜85°C,鍍膜時間為5〜1〇n]in。 如申请專利範圍第8項所述之鑛膜件的製備方法,其中形 成所述Si〇2層的步驟採用如下方式實現:採用磁㈣射法 ’使用S1乾,以氧氣為反應氣趙,氧氣流量為1 〇〜 25sccm,以氬氣為工作氣體,氬氣流量為i2〇〜2〇〇sam ’對基材施加直流偏壓為_5〇〜_15〇v,鍵膜室的溫度為 50〜85°C,鍍膜時間為2〜3min。 11 .如申請專利範圍第8項所述之鑛膜件的製備方法其中形 成所述Cu-Zn合金層的步驟採用如下方式實現:採用磁控 濺射法,使用銅鋅合金靶,所邀銅鋅合金靶中銅的質量百 分含量為80%〜90%,以氬氣為工作氣體,氬氣流量為2〇 〜50sccm ’對基材施加耦合脈衝擦壓為_18〇〜—35〇v, 脈衝頻率為ΙΟΚΗζ,脈衝寬度為20yWS,鍍膜室的溫度為 5〇〜85°C,鍍膜時間為2〜3min。 12 .如申請專利範圍第8項所述之鍍膜件的製備方法,其中所 述交替形成Si〇2層和Cu-Zn合金層的次數總共為5〜2〇次 099136034 表單編號A0101 第10頁/共11頁 0992062999-010. The method for preparing a mineral film member according to claim 8, wherein the step of forming the underlayer is performed in the following manner: a magnetron control method using Si dry 'with argon gas as a working gas, nitrogen gas The flow rate is ~500sCCm, and the substrate is biased to _5〇~_i5〇v, the temperature of the coating chamber is 50~85°C, and the coating time is 5~1〇n]in. The method for preparing a mineral film member according to claim 8, wherein the step of forming the Si〇2 layer is carried out by using a magnetic (four) shot method using S1 dry, using oxygen as a reaction gas, oxygen The flow rate is 1 〇~ 25sccm, argon gas is used as the working gas, and the argon gas flow rate is i2〇~2〇〇sam 'The DC bias is applied to the substrate as _5〇~_15〇v, and the temperature of the bond chamber is 50~ 85 ° C, coating time is 2 ~ 3min. 11. The method for preparing a mineral film member according to claim 8, wherein the step of forming the Cu-Zn alloy layer is carried out by using a magnetron sputtering method using a copper-zinc alloy target, and inviting copper The mass percentage of copper in the zinc alloy target is 80%~90%, the working gas is argon gas, and the flow rate of argon gas is 2〇~50sccm. The coupling pulse is applied to the substrate to be _18〇~-35〇v. The pulse frequency is ΙΟΚΗζ, the pulse width is 20yWS, the temperature of the coating chamber is 5〇~85°C, and the coating time is 2~3min. 12. The method of preparing a coated member according to claim 8, wherein the number of times of alternately forming the Si〇2 layer and the Cu-Zn alloy layer is 5~2 times 099136034 Form No. A0101 Page 10/ Total 11 pages 0992062999-0
TW99136034A 2010-10-22 2010-10-22 Coated article and method for making the same TW201217566A (en)

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