201215714 六、發明說明： 【發明所屬之技術領域】 本發明係有關-種應用於長晶爐之氣流導引褒置，尤 指一種可以有效降低雜質濃度之長晶爐氣流導引裝置。 【先前技術】 眾所周知，太陽能電池是利用太陽光與材料相互作用 直接產生電力的一種無污染再生能源，尤其太陽能電池在 #使用中並不會釋放包括二氧化碳在内之任何氣體，明顯可 改善生態環境、解決地球溫室效應的問題。 太陽能電池是將太陽能轉換成電能的裝置，且不需要 透過電解質來傳遞導電離子，而是改採半導體產生PN結 來獲得電位，當半導體受到太陽光的照射時，大量的自由 電子伴隨而生，而此電子的移動又產生了電流，也就是在 PN結處產生電位差。 目前，太陽能電池主要分非晶、單晶及多晶三種；如 φ第一圖所示，為一種用以製造矽晶體之長晶爐，其主要係 以一供盛裝矽熔湯11的坩堝21為主體，並且於坩堝21 外圍設有侧絕熱層22及上絕熱層23 ’使構成一密封的熱 場，並且於熱場當中設有加熱器24用以對矽金屬進行加 熱。 再者，熱場之上絕熱層23處設有一供連接惰性氣體 之輸氣管25，以及數量不等的排氣孔26。使於矽金屬加 熱熔融過程中，配合由輸氣管25輸入預定流速的氣體， 藉以產生通過熱場的氣流，以將容易形成雜質的氧化物排 3 201215714 出° 整體長晶爐則可採用降低加熱器24功率使坩堝21 内之矽熔湯11固化的方式獲得晶體12(鑄造法），或採用 側絕熱層22上移輻射冷卻使坩堝21内之矽熔湯11固化 的方式獲得晶體12(直接固化系統）。 甚至於，可進一步於坩堝21與底座27之間連接有一 支柱28 ;使得以透過支柱28帶動坩堝21下移至冷區， 使坩堝21内之矽熔湯11固化的方式獲得晶體12(布氏 法），或是於支柱28導入冷卻流體，使坩堝21内之矽熔 湯11固化的方式獲得晶體12(熱交換器法）。 惟，類似習用之長晶爐之氣流導引裝置當中的輸氣管 25僅概略伸入上絕熱層23下方之熱場中，因此極容易因 為輸氣管25之管口與坩堝21内部矽熔湯11之自由表面 (矽熔湯與氣體之接觸表面）距離過長，致使排出輸氣管 25之氣流無法有效將雜質帶離自由表面，使形成之晶體 所含雜質濃度較高，因而降低晶體品質。 【發明内容】 有鑑於此，本發明即在提供長晶爐一種可以有效降低 雜質濃度，藉以提升晶體品質之氣流導引裝置，為其主要 目的者。 為達上述目的，本發明之氣流導引裝置係包括有：一 相對罩設於坩堝外圍的絕熱層、一設於絕熱層上的輸氣 管，以及若干設於絕熱層的排氣孔，使得以配合由輸氣管 201215714 輸入預定流速的氣體，藉以產生通過熱場的氣流，以將容 易形成雜質的氧化物排出；尤其，輸氣管之管口處設有若 干至放射狀配置之導流板，其通過輸氣管之氣流即在導流 板之作用下，使熔湯之自由表面得以同步接受導引氣流之 吹拂作用，達到有效降低雜質濃度之目的，進而提升晶體 之品質。 本發明之氣流導引裝置係可進一步在輸氣管處設有 一高度調節機構，使得以依照實際操作時的坩堝高度或熔 •湯之自由表面高度，而調整輸氣管之相對高度，以準確掌 控輸氣管之管口與坩堝内部熔湯之自由表面保持在預定 的間距範圍内，使得以在相同氣體流速之條件下，可增加 自由表面氣體之流速，能夠將氣化之雜質混合氣迅速帶離 熔湯之自由表面，並加速將雜質帶離自由表面之速率。 本發明之氣流導引裝置係可再進一步於各導流板與 輸氣管之間設有角度調節機構，使得以依照實際操作狀態 調整導流板之角度，使得以配合晶體生長過程改變氣體之 #流速，進而能夠準確掌控晶體之品質。 【實施方式】 本發明之特點，可參閱本案圖式及實施例之詳細說明 而獲得清楚地瞭解。 本發明主要提供長晶爐一種可以有效降低雜質濃 度，藉以提升晶體品質之氣流導引裝置，如第二圖及第三 圖所示，本發明之長晶爐主要係以一供盛裝矽熔湯41的坩 201215714 堝31為主體，並且於坩堝31外圍設有絕熱層32,使構成一 密封的熱場’並且於熱場當中設有加熱器37用以對矽金屬 進行加熱。 本發明之氣流導引裝置係包括有：一設於該絕熱層32 上的輸氣管33,以及若干設於該絕熱層32的排氣孔34;使 得以配合由輸氣管33輸入預定流速的氣體，藉以產生通過 熱場的氣流’以將容易形成雜質的氧化物排出；其特徵在 於： 該輸氣管33之管口處設有若干呈放射狀配置之導流 板36’用以將通過輸氣管33之氣流朝向輸氣管33之管口周 圍引導’使熔湯41之自由表面得以同步接受導引氣流之吹 拂作用，而加速將雜質帶離自由表面之速率，以有效降低 雜質濃度’藉以提熔湯41冷卻固化後之晶體品質。 本發明之氣流導引裝置所應用之長晶爐，係可以為採 用直接降低加熱器功率使坩堝31内之熔湯41冷卻固化（鑄 造法）之長晶爐，或是以絕熱層32上移輻射冷卻使坩堝31 内之熔湯41冷卻固化（直接固化系統）之長晶爐。 當然’本發明之氣流導引裝置所應用之長晶爐係可進 一步於坩堝31底部連接有一支柱38;使得以透過支柱帶動 坩堝31下移至冷區，使坩堝31内之熔湯41冷卻固化（布氏 法），或是於支柱導入冷卻流體，使掛塌31内之炼湯41冷 卻固化（熱交換器法），而皆可以利用本發明之氣流導引裝201215714 VI. Description of the Invention: [Technical Field] The present invention relates to a gas flow guiding device applied to a crystal growth furnace, and more particularly to a crystal growth furnace gas guiding device capable of effectively reducing impurity concentration. [Prior Art] As we all know, solar cells are a kind of pollution-free renewable energy that directly generates electricity by interacting with sunlight and materials. In particular, solar cells do not release any gas including carbon dioxide during use, which can obviously improve the ecological environment. To solve the problem of the global warming effect. A solar cell is a device that converts solar energy into electrical energy, and does not need to transmit conductive ions through an electrolyte. Instead, a semiconductor is used to generate a PN junction to obtain a potential. When the semiconductor is exposed to sunlight, a large amount of free electrons are accompanied. The movement of this electron generates a current, that is, a potential difference is generated at the PN junction. At present, solar cells are mainly classified into amorphous, single crystal and polycrystalline; as shown in the first figure of φ, it is a crystal growth furnace for making ruthenium crystals, which is mainly used for 坩埚21 for 矽 矽 11 11 As the main body, a side heat insulating layer 22 and an upper heat insulating layer 23' are provided on the periphery of the crucible 21 to form a sealed heat field, and a heater 24 is provided in the heat field for heating the base metal. Further, a heat pipe 23 on the upper side of the heat field is provided with an air pipe 25 for connecting an inert gas, and a plurality of vent holes 26 are provided. In the process of heating and melting the base metal, a gas having a predetermined flow rate is input by the gas pipe 25, thereby generating a gas flow through the heat field, so that the oxide row 3 which is easy to form impurities is discharged. The power of the device 24 is such that the crucible 11 in the crucible 21 is solidified to obtain the crystal 12 (casting method), or the side thermal insulation layer 22 is irradiated and cooled to cool the crucible 11 in the crucible 21 to obtain the crystal 12 (directly Curing system). Further, a post 28 may be further connected between the crucible 21 and the base 27; so that the crucible 21 is moved down to the cold zone by the propule 28, and the crucible 11 in the crucible 21 is solidified to obtain the crystal 12 (Brinell) The method 12 is to introduce the crystal 12 (heat exchanger method) in such a manner that the cooling fluid is introduced into the column 28 and the crucible 11 in the crucible 21 is solidified. However, the gas pipe 25 in the gas flow guiding device similar to the conventional crystal growth furnace only protrudes into the heat field below the upper heat insulating layer 23, so that it is extremely easy to melt the soup due to the nozzle of the gas pipe 25 and the inside of the crucible. The free surface (the contact surface of the crucible soup and the gas) is too long, so that the gas flow exiting the gas pipe 25 cannot effectively carry the impurities away from the free surface, so that the crystal formed has a high concentration of impurities, thereby lowering the crystal quality. SUMMARY OF THE INVENTION In view of the above, the present invention provides a gas crystal guiding device which can effectively reduce the concentration of impurities and thereby improve the quality of crystals, and is the main object of the present invention. In order to achieve the above object, the airflow guiding device of the present invention comprises: a heat insulating layer disposed on the outer periphery of the crucible, a gas conveying pipe disposed on the heat insulating layer, and a plurality of air outlet holes disposed in the heat insulating layer, so as to Cooperating with the gas from the gas pipe 201215714 to input a predetermined flow rate, thereby generating a gas flow through the heat field to discharge oxides which are easy to form impurities; in particular, a plurality of radially arranged baffles are arranged at the nozzle of the gas pipe, The airflow through the gas pipe is under the action of the baffle plate, so that the free surface of the molten stone can synchronously receive the blowing action of the guiding airflow, thereby effectively reducing the impurity concentration, thereby improving the quality of the crystal. The airflow guiding device of the present invention can further provide a height adjusting mechanism at the gas conveying pipe, so as to adjust the relative height of the gas pipe according to the height of the concrete or the free surface height of the molten soup, so as to accurately control the loss. The free surface of the tube of the trachea and the inner melt of the crucible is maintained within a predetermined range of distance, so that the flow rate of the free surface gas can be increased under the same gas flow rate, and the vaporized impurity mixture can be quickly stripped away from the melt. The free surface of the soup accelerates the rate at which impurities are carried away from the free surface. The airflow guiding device of the present invention can further provide an angle adjusting mechanism between each deflector and the gas pipe, so that the angle of the baffle is adjusted according to the actual operating state, so that the gas is changed in accordance with the crystal growth process. The flow rate, in turn, can accurately control the quality of the crystal. [Embodiment] The features of the present invention can be clearly understood by referring to the detailed description of the drawings and the embodiments. The invention mainly provides a gas crystal guiding device capable of effectively reducing the impurity concentration and thereby improving the crystal quality. As shown in the second and third figures, the crystal growth furnace of the present invention mainly serves as a simmering soup. The 坩201215714 埚31 of 41 is the main body, and a heat insulating layer 32 is provided on the periphery of the 坩埚31 so as to constitute a sealed thermal field' and a heater 37 is provided in the thermal field for heating the base metal. The airflow guiding device of the present invention comprises: a gas pipe 33 disposed on the heat insulating layer 32, and a plurality of gas venting holes 34 disposed in the heat insulating layer 32; so as to cooperate with the gas input by the gas pipe 33 to a predetermined flow rate. Thereby, generating a gas flow through the thermal field to discharge oxides which are easy to form impurities; wherein: the nozzle of the gas pipe 33 is provided with a plurality of radially arranged baffles 36' for passing through the gas pipe The airflow of 33 is directed toward the periphery of the nozzle of the gas pipe 33 to enable the free surface of the melt 41 to simultaneously receive the blowing action of the guiding gas stream, and accelerate the rate at which the impurities are carried away from the free surface to effectively reduce the impurity concentration. The crystal quality of the soup 41 after cooling and solidification. The crystal growth furnace to which the airflow guiding device of the present invention is applied may be a crystal growth furnace which directly cools the heater 41 to cool and solidify the molten steel 41 in the crucible 31 (casting method), or is moved up by the heat insulating layer 32. The radiant cooling causes the molten crystal 41 in the crucible 31 to cool and solidify (direct curing system) in the crystal growth furnace. Of course, the crystal growth furnace used in the airflow guiding device of the present invention may further have a pillar 38 connected to the bottom of the crucible 31; so that the crucible 31 is moved down to the cold zone through the pillar to cool and solidify the molten 41 in the crucible 31. (Brinell method), or introducing a cooling fluid into the pillar to cool and solidify the soup 41 in the collapse 31 (heat exchanger method), and all of the airflow guiding devices of the present invention can be utilized.
置有效降低雜質濃度，藉以提升熔湯41冷卻固化後之晶體 42品質。 M 201215714 再者，本發明之氣流導引裝置係可進一步在該輸氣管 33處設有一用以調節該輸氣管33相對高度之高度調節機 構，該高度調節機構係可以由一軸設於該絕熱層32上的螺 旋套筒35為主體，該輸氣管33之外圍係設有供與該螺旋套 筒35相螺接的螺牙區段331，使當該輸氣管33與螺旋套筒 35相對轉動時，即可利用螺旋作用調整該輸氣管之相對高 度。 整體長晶爐之氣流導引裝置即得以依照實際操作時 _的坩堝31高度或熔湯41之自由表面高度，調整該輸氣管33 之相對高度，以準確掌控輸氣管33之管口與坩堝31内部熔 湯41之自由表面保持在預定的間距範圍内，使得以在相同 氣體流速之條件下，增加自由表面氣體之流速，能夠將氣 化之雜質混合氣迅速帶離熔湯41之自由表面，並加速將雜 質帶離自由表面之速率。 再者，該坩堝31内部輪廓形狀係可以如呈第三圖所示 為方形，或是如第四圖所示該坩堝31内部輪廓形狀為圓 #形；而且，該導流板36之外緣與該坩堝31之内緣係保持有 一預定之間距，且，本發明之氣流導引裝置當中相鄰導流 板36尾端的間隙係小於導流板36寬度的一半為佳。 另外，本發明之氣流導引裝置係可再進一步於各導流 板36與輸氣管之間設有角度調節機構，使得以依照實際操 作狀態調整導流板之角度，使得以配合晶體生長過程改變 氣體之流速，進而能夠準確掌控晶體之品質。 於實施時，如第五圖所示，本發明中的角度調節機構 201215714 係在各導流板36上設有轨道361，另於各轨道361與該輸氣 管33之間連接有拉桿362，使得以在拉桿362與軌道361之 作用下，使導流板36與輸氣管33可做夹角之調整；抑或 是，如第六圖所示，於各導流板36與該輸氣管33之間設有 鉸鍊363，使導流板36與輸氣管33可做夾角之調整，以符 合不同氣體流速之使用需求，而該導流板36與輸氣管33 之角度可以介於80〜160度之間，其中以9〇度以及15〇度為 最佳；當然，另於該坩堝31上方可進一步設有蓋板39，而 該蓋板36上設有預定數量之排氣孔34 本發明之氣流導引裝置主要利用該輸氣管33管口處 之導流板36設計，使通過輸氣管33之氣流係可在導流板36 之作用下，使熔湯41之自由表面得以同步接受導丨 吹拂作用，達到有效降低雜質濃度之目的。 〃机之 如上所述’本發明提供長晶爐一較佳可行之氣流導引 裝置，爰依法提呈發明專利之申請；本發明之技術内容及 技術特點已揭示如上，然而熟悉本項技術之人士仍可能基 於本發明之揭示而作各種不背離本案發明精神之替換= 修飾。因此，本發明之保護範圍應不限於實施例所揭示 者，而應包括各種不背離本發明之替換及修飾，並為以下 之申請專利範圍所涵蓋。 【圖式簡單說明】 第一圖係為一習用長晶爐之長晶爐之氣流導引裝 結構不意圖。 201215714 第二圖係為本發明之長晶爐結構剖視圖。 第三圖係為本發明中導流板之結構俯視圖。 第四圖係為本發明中導流板之另一結構俯視圖。 第五圖係為本發明第一實施例之氣流導引裝置結構 剖視圖。 第六圖係為本發明第二實施例之氣流導引裝置結構 剖視圖。 •【主要元件符號說明】 11矽熔湯 331螺牙區段 12晶體 34排氣孔 21坩堝 35螺旋套筒 2 2側絕熱層 36導流板 23上絕熱層 361軌道 24加熱器 362拉桿 25輸氣管 363鉸鍊 26排氣孔 37加熱器 27底座 38支柱 28支柱 39蓋板 31坩堝 41溶湯 32絕熱層 42晶體 33輸氣管It is effective to reduce the impurity concentration, thereby improving the quality of the crystal 42 after the molten 41 is cooled and solidified. M 201215714 Further, the airflow guiding device of the present invention may further provide a height adjusting mechanism for adjusting the relative height of the gas pipe 33 at the gas pipe 33, and the height adjusting mechanism may be disposed on the heat insulating layer by a shaft. The spiral sleeve 35 on the main body of the gas pipe 33 is provided with a threaded portion 331 for screwing with the screw sleeve 35, so that when the gas pipe 33 and the spiral sleeve 35 are relatively rotated The spiral can be used to adjust the relative height of the gas pipe. The airflow guiding device of the whole crystal growth furnace can adjust the relative height of the gas pipe 33 according to the height of the 坩埚31 of the actual operation or the free surface height of the melt 41 to accurately control the nozzle and the raft of the gas pipe 33. The free surface of the internal melt 41 is maintained within a predetermined range of spacing so that the vaporized impurity mixture can be quickly carried away from the free surface of the melt 41 by increasing the flow rate of the free surface gas at the same gas flow rate. And accelerate the rate at which impurities are carried away from the free surface. Furthermore, the inner contour of the crucible 31 may be square as shown in the third figure, or the inner contour of the crucible 31 may be rounded as shown in the fourth figure; and the outer edge of the deflector 36 The inner edge of the crucible 31 is maintained at a predetermined distance, and the gap between the ends of the adjacent baffles 36 of the air flow guiding device of the present invention is preferably less than half the width of the deflector 36. In addition, the airflow guiding device of the present invention can further provide an angle adjusting mechanism between each of the deflector 36 and the gas pipe, so that the angle of the baffle is adjusted according to the actual operating state, so as to change with the crystal growth process. The flow rate of the gas, in turn, can accurately control the quality of the crystal. In the implementation, as shown in the fifth figure, the angle adjusting mechanism 201215714 in the present invention is provided with a rail 361 on each of the deflectors 36, and a tie rod 362 is connected between each rail 361 and the air duct 33, so that In the action of the tie rod 362 and the rail 361, the deflector 36 and the gas pipe 33 can be adjusted at an angle; or, as shown in the sixth figure, between the deflector 36 and the gas pipe 33 A hinge 363 is provided to adjust the angle between the deflector 36 and the gas pipe 33 to meet the requirements of different gas flow rates, and the angle between the baffle 36 and the gas pipe 33 can be between 80 and 160 degrees. Preferably, 9 degrees and 15 degrees are preferred; of course, a cover plate 39 may be further disposed above the top 31, and the cover 36 is provided with a predetermined number of exhaust holes 34. The guiding device mainly utilizes the design of the baffle 36 at the nozzle of the gas pipe 33, so that the air flow through the gas pipe 33 can be under the action of the baffle 36, so that the free surface of the molten stone 41 can be simultaneously guided to conduct the guiding and blowing action. , to achieve the purpose of effectively reducing the concentration of impurities. As described above, the present invention provides a preferred gas flow guiding device for a crystal growth furnace, and an application for an invention patent according to the law; the technical contents and technical features of the present invention have been disclosed above, but are familiar with the present technology. It is still possible for a person to make various alternatives/modifications without departing from the spirit of the invention based on the disclosure of the present invention. Therefore, the scope of the invention should be construed as not limited by the scope of the invention, and the invention is intended to [Simple description of the drawing] The first figure is not intended for the airflow guiding structure of a crystal growth furnace of a conventional crystal growth furnace. 201215714 The second figure is a cross-sectional view of the structure of the crystal growth furnace of the present invention. The third figure is a top view of the structure of the deflector in the present invention. The fourth figure is a top view of another structure of the deflector in the present invention. Fig. 5 is a cross-sectional view showing the structure of the air flow guiding device of the first embodiment of the present invention. Figure 6 is a cross-sectional view showing the structure of the air flow guiding device of the second embodiment of the present invention. • [Main component symbol description] 11矽 molten soup 331 screw section 12 crystal 34 exhaust hole 21坩埚35 spiral sleeve 2 2 side heat insulation layer 36 baffle 23 on thermal insulation layer 361 track 24 heater 362 tie rod 25 loss Trachea 363 hinge 26 vent 37 heater 27 base 38 pillar 28 pillar 39 cover 31 坩埚 41 dissolved soup 32 insulation layer 42 crystal 33 gas pipe