35650twf.doc/n 201213551 , -------173 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種銦(Indium)的回收方法，且特別 是有關於一種銦錫氧化物薄膜(ITO thin film)的回收方法。 【先前技術】 由於平面顯示器具有重量輕以及體積小等傳統陰極 射線管(cathode ray tube，CRT)所製造之顯示器無法達到的 優點，因此平面顯示器已成為近年來顯示器的主流。一般 常見的平面顯示器包括液晶顯示器、有機電激發光顯示 器、電浆顯不器、電泳顯不器等，這些顯示器多半採用銦 錫乳化物作為其畫素電極之材質。而在現行平面顯示器的 生產過程中’銦錫氧化物薄膜之蝕刻製程多半是使用草酸 (Oxalic acid)來進行〇詳言之，尚未經過回火製程(anneaUng process)之銦錫氧化物薄膜其結構尚未緻密化，故能夠被草 酸所蝕刻，而尚未經過回火製程之銦錫氧化物薄膜會與草 酸反應而產生草酸銦離于(in(C2〇4)2-)，且草酸銦離子 (In(C2〇4)2_)可藉由樹脂塔來進行銦的回收。 然而，草酸僅能用以钱刻尚未經過回火製程之銦錫氧 化物薄膜，無法用以蝕刻結構經過緻密化（經過回火製程） 之銦錫氧化物薄膜。若要餘刻經過回火製程之銦錫氧化物 薄膜，業者通常會使用鹽鐵系（FeCl3+HC1)蝕刻劑 、王水 (HN〇3+HCl)或是硝I系兹刻劑來進行，但由於前述用以回 收銦的樹麟並^適祕含有^肖酸(臟^減份的溶液，且 201213551 ^73 35650twf.doc/n 目前尚無利用樹脂塔來處理鹽鐵系溶液的技術存在，所以 目前經過回火製程之銦錫氧化物薄膜在被鹽鐵系 (FeCldHCl)#刻劑、王水(HNCVHCl)或是硝酸系钱刻劑 蝕刻後會溶解於蝕刻劑中，而溶解於上述蝕刻劑中的銦元 素目前無法回收。 【發明内容】 本發明提供一種銦錫氧化物薄膜的回收方法，以有效 地回收銦錫氧化物薄膜中的銦。 本發明另提供一種基板的回收方法，以移除基板上 薄膜。 本發明提供一種銦錫氧化物薄膜的回收方法。首先， 提供一待回收物，此待回收物具有一銦錫氧化物薄膜，接 著，使一鹼液與銦錫氧化物薄膜接觸，以使銦錫氧化物薄 ，自待回收物剝離並混合於鹼液中，其中鹼液之成分包括 氫氧化鉀及/或氫氧化鈉。之後，收集剝離的銦錫氧化物薄 膜與鹼液之混合物，並自銦錫氧化物薄膜與鹼液之混合物 中過遽'而取得含銦之粉末。 、在本發明之一實施例中，前述之待回收物為一彩色濾 光基板，而銦錫氧化物薄膜為彩色濾光基板上之一丘 極。 在本發明之一實施例中，前述之待回收物為一主動元 件陣列基板，而銦錫氧化物薄膜為主動元件陣列基板上之 多個晝素電極。 在本發明之一實施例中，前述之鹼液之成分包括氫氧 4 201213551 --------73 35650twf.doc/n 化鉀水溶液、醚醇類溶劑、醇胺類溶劑、醇類溶劑以及介 面活性劑。 在本發明之一實施例中，前述之驗液之溫度介於2〇〇c 至75°C之間。 在本發明之一實施例中，前述之鹼液與銦錫氧化物薄 膜接觸的時間介於20秒至300秒之間。 在本發明之一實施例中，前述之驗液與銦錫氧化物薄 膜接觸之後，可進一步使一酸液與銦錫氧化物薄膜接觸， 以自待回收物上移除殘留之銦錫氧化物薄膜。 在本發明之一實施例中，前述之殘留的銦錫氧化物薄 膜係與酸液反應並溶解於酸液中。 在本發明之一實施例中，前述之酸液之成分包括鹽鐵 系(FeClrhHCl)溶液、王水(HN〇3+HCl)或是硝酸系溶液。 本發明另提供一種基板的回收方法。首先，提供一元 件基板，此元件基板包括一基板、多個元件薄膜以及一銦 錫氧化物薄膜，且此銦錫氧化物薄膜覆蓋於基板與元件薄 膜上。.择著，使一鹼液與銦錫氧化物薄膜接觸，以使銦錫 氧化物薄膜自元件薄膜剝離並混合於鹼液中，其中驗液之 成分包括氫氧化鉀及/或氫氧化鈉。接著，使一酸液與銦錫 氧化物薄膜接觸，以自基板上移除殘留之銦錫氧化物薄 膜。之後，使用鹼液移除前述之元件薄膜。 在本發明之一實施例中，前述之元件薄膜包含多個彩 色濾光薄膜或多個主動元件。 在本發明之一實施例中，前述之銦錫氧化物薄膜自彩 色濾光薄膜剝離的同時，部分的彩色濾光薄膜與鹼液反應 35650twf.doc/n 201213551 ^i73 而溶解於該驗液中。 在本發明之一實施例中，前述之基板的回收方法可進 一步包括收集剝離的銦錫氧化物薄膜與鹼液之混合物，並 自姻錫氧化物薄膜與鹼液之混合物中過濾而取得含銦之粉 本發明採用鹼液與銦錫氧化物薄膜接觸，使銦錫氧化 物薄膜自待回收物（如基板）上剝離而混合於鹼液中，以 達到銦錫氧化杨薄膜或基板回收之目的。 為讓本發明之上述和其他目的、特徵和優點能更明顯 易盧下文特舉較佳實施例，並配合所附圖式，作詳細^ 明如下。 【實施方式】 【第一實施例】 圖1為本發明第一實施例之麵錫氧化物薄膜回收方法 凊參照圖1 ’本實施例之銦錫氧化物薄膜的回 收方法匕括下列步驟（S110〜S140)。首先，提供一待回 此待回收物具有—銦錫氧化物薄膜（步驟SU0)， 二2一？液與銦錫氧化物薄膜接觸，以使銦錫氧化物 離並混合於驗液中，其中驗液之成分包 此隹，/或氫氧化鈉等強鹼性成份（步驟S120)。 Ϊί負：，離的銦錫氧化物薄膜與鹼液之混合物，並自 過遽'而取得含鋼之粉末 德此外在取得含銦之粉末（步驟S130之 吏） 進订後續之銦回收動作（步驟S140)。以下將 35650twf.doc/n 201213551 ,35650twf.doc/n 201213551, -------173 VI. Description of the Invention: [Technical Field] The present invention relates to a method for recovering indium (Indium), and in particular to an indium tin oxidation Method for recovering ITO thin film. [Prior Art] Since a flat panel display has advantages such as a display made by a conventional cathode ray tube (CRT) such as a light weight and a small size, a flat panel display has become the mainstream of displays in recent years. Commonly used flat panel displays include liquid crystal displays, organic electroluminescent displays, plasma displays, electrophoretic displays, etc. Most of these displays use indium tin emulsion as the material of their pixel electrodes. In the current production process of flat panel displays, the etching process of indium tin oxide film is mostly carried out using Oxalic acid. In detail, the structure of the indium tin oxide film which has not been subjected to the anneal process (anneaUng process) It has not been densified, so it can be etched by oxalic acid, and the indium tin oxide film which has not been subjected to the tempering process will react with oxalic acid to produce indium oxalate (in(C2〇4)2-), and indium oxalate ion (In (C2〇4) 2_) Indium recovery can be carried out by a resin column. However, oxalic acid can only be used to engrave an indium tin oxide film that has not been subjected to a tempering process, and cannot be used to etch an indium tin oxide film whose structure has been densified (tempered). In order to re-etch the indium tin oxide film through the tempering process, the industry usually uses the salt iron (FeCl3 + HC1) etchant, aqua regia (HN 〇 3 + HCl) or the nitrate I line engraving agent. However, due to the aforementioned method for recovering indium, it is suitable for containing a solution of cholesteric acid (dirty^subtractive solution, and 201213551^73 35650twf.doc/n. There is currently no technology for treating a salt iron solution by using a resin tower. Therefore, the indium tin oxide film which has been subjected to the tempering process is dissolved in the etchant after being etched by the salt iron (FeCldHCl)# engraving agent, the aqua regia (HNCVHCl) or the nitric acid moieving agent, and is dissolved in the above The indium element in the etchant is currently not recoverable. SUMMARY OF THE INVENTION The present invention provides a method for recovering an indium tin oxide film to efficiently recover indium in an indium tin oxide film. The present invention further provides a substrate recycling method. The invention provides a method for recovering an indium tin oxide film. Firstly, a to-be-recovered material having an indium tin oxide film and then oxidizing an alkali solution and indium tin is provided. The film is in contact with it so that The tin oxide is thin, is stripped from the to-be-recovered material and mixed in the alkali solution, wherein the composition of the alkali liquid includes potassium hydroxide and/or sodium hydroxide. Thereafter, the mixture of the stripped indium tin oxide film and the alkali solution is collected, and The indium-containing powder is obtained from the mixture of the indium tin oxide film and the alkali solution. In one embodiment of the invention, the foregoing object to be recovered is a color filter substrate, and the indium tin oxide film In one embodiment of the present invention, the to-be-recycled material is an active device array substrate, and the indium tin oxide film is a plurality of halogen electrodes on the active device array substrate. In an embodiment of the invention, the composition of the lye comprises the oxyhydrogen 4 201213551 --------73 35650 twf.doc/n potassium solution, the ether alcohol solvent, the alcohol amine solvent, the alcohol Solvent-like and interfacial active agent. In one embodiment of the invention, the temperature of the aforementioned test solution is between 2 〇〇c and 75 ° C. In one embodiment of the invention, the aforementioned lye and indium are used. Tin oxide film contact time between 20 seconds and 300 In an embodiment of the present invention, after the foregoing test solution is in contact with the indium tin oxide film, an acid solution may be further contacted with the indium tin oxide film to remove residual indium from the to-be-recycled material. In one embodiment of the present invention, the residual indium tin oxide film is reacted with an acid solution and dissolved in an acid solution. In one embodiment of the present invention, the composition of the acid solution is as described above. The invention comprises a salt iron system (FeClrhHCl) solution, aqua regia (HN〇3+HCl) or a nitric acid solution. The invention further provides a substrate recycling method. First, an element substrate is provided, the element substrate comprising a substrate and a plurality of The element film and an indium tin oxide film, and the indium tin oxide film covers the substrate and the element film. Alternatively, an alkali solution is contacted with the indium tin oxide film so that the indium tin oxide film is peeled off from the element film and mixed in the alkali solution, wherein the components of the test solution include potassium hydroxide and/or sodium hydroxide. Next, an acid solution is brought into contact with the indium tin oxide film to remove the residual indium tin oxide film from the substrate. Thereafter, the aforementioned element film is removed using an alkali solution. In one embodiment of the invention, the aforementioned element film comprises a plurality of color filter films or a plurality of active elements. In one embodiment of the present invention, the indium tin oxide film is stripped from the color filter film, and part of the color filter film is dissolved in the test solution by reacting with the alkali solution 35650 twf.doc/n 201213551 ^i73. . In an embodiment of the present invention, the method for recovering the substrate may further include collecting a mixture of the stripped indium tin oxide film and the alkali solution, and filtering the mixture of the tin oxide film and the alkali solution to obtain the indium. The present invention adopts an alkali solution to be in contact with an indium tin oxide film, and the indium tin oxide film is stripped from the substance to be recovered (such as a substrate) and mixed in the alkali solution to achieve the purpose of indium tin oxide film or substrate recovery. . The above and other objects, features and advantages of the present invention will become more apparent. [First Embodiment] Fig. 1 is a view showing a method for recovering a tin oxide film according to a first embodiment of the present invention. Referring to Fig. 1 , a method for recovering an indium tin oxide film of the present embodiment includes the following steps (S110) ~S140). First, provide a sample to be recycled with an indium tin oxide film (step SU0), two two one? The liquid is contacted with the indium tin oxide film to separate and mix the indium tin oxide in the test liquid, wherein the component of the test solution contains a strong alkaline component such as hydrazine, and/or sodium hydroxide (step S120). Ϊί negative: a mixture of the indium tin oxide film and the lye, and obtain the powder containing steel from the 遽', and further obtain the indium-containing powder (step S130) to order the subsequent indium recovery operation ( Step S140). The following will be 35650twf.doc/n 201213551,
Λ Λ A W W W A i J 針對步驟Sll〇〜步驟S140進行詳細之描述。 在本實施例中，步驟S110所提及之待回收物例如為 為一彩色遽光基板’而此彩色滤光基板具有之一共通電 極，且此共通電極為铜錫氧化物薄膜。本實施例不限定待 回收物必須是彩色濾光基板，其他具有銦錫氧化物薄膜之 待回收物亦可以採用本實施例之回收方法。在其他可行之 實施例中，步驟S110中所提及之待回收物可為一具有多 個晝素電極的主動元件陣列基板（如薄膜電晶體陣列基 板）’而這些晝素電極為銦錫氧化物薄膜。或者，待回二 物例如是具有多個透明電極之太陽能基板，其中太陽能基 板具有多個太陽能單元，而這些透明電極例如是銦錫氧化 物薄膜。此外，待回收物例如是具有多個透明電極之晶圓， 其中晶圓具有多個電路單元，而這些透明電極例如為銦錫 氧化物薄膜。 在步驟S120中，鹼液例如係採用喷灑(spray)或者是 浸泡的方式提供至待回收物之銦錫氧化物薄膜上，而所使 ，，鹼液的主要成分為氫氧化鉀、氫氧化鈉或氫氧化鉀與 氫氧化鈉之混合物。其中，鹼液的功能是用以破壞待回收 物之銦錫氧化物缚膜以及位於待回收物之銦錫氧化物膜 下方薄膜的鍵結能力及/或位於待回收物之銦錫氧化物薄 膜下方薄膜的結構，了氫氧化_、氫氧化納之外，驗液 中還可添加其他成分，例如畴類賴、軸類溶劑、醇 類溶劑及/或介©雜解至少其+ —者。舉例上述之各添 加物主要功能描述如下⑴單乙醇胺_A》軟化有機聚合 物使之易於剝離破璃基板。⑺仏甲基轉轉漏^軟化 ^ 73 35650twf.doc/n 有機聚合物，使之易於剝離玻璃基板。（3)三乙醇胺(TEA): 主要用於幫助溶解有機聚合物光阻於水中。（4)異丙醇(IPA): 主要用於幫助N-曱基吡咯酮(MEA)溶劑和N-曱基吡咯酮 (NMP)溶劑和水互溶。（5)乙二醇丁醚(BC)主要用於潤濕軟化 有機聚合物’使之易於剝離玻璃基板。前述之鹼液在加入 上述之成份時，會讓銦錫氧化物薄膜下方的有機聚合物發 生膨潤與表面結構軟化，導致上方的銦錫氧化物薄膜與其 間之附著力下降，進而加速銦錫氧化物薄膜剝離脫落的速 率。需注意的是，若待回收物之姻錫氧化物薄膜下方不具 有有機聚合物，鹼液中就可以不需要添加其它成份，但可 需視各公司所製造的產品而來決定添加劑。在本實施例 中，當鹼液為氫氧化鉀溶液時，其濃度例如是實質上大於 或等於7%wt ;當鹼液為氫氧化鈉溶液時，其濃度例如是 ，質上大於或等於3%wt。鹼液的濃度越高，銦錫氧化物 薄膜剝離的效果越好。此外，鹼液之溫度例如是約介於 20°C至75°C之間，且鹼液與銦錫氧化物薄膜接觸的時間 例如是約介於120秒至300秒之間。以濃度約為7%树、 溫度約為攝氏30度之氫氧化_溶液為例，銦錫氧化物薄膜 在與氫氧化鉀溶液接觸後約240秒便出現龜裂、剝離的現 象▲’顯見氫氧化_溶液對於銦錫氧化物薄膜具有良好的剝 離能力。以濃度約為3%wt、溫度約為攝氏6()度 銦錫氧化物薄膜在與氫氧化納溶液接觸後約 ==尸裂、剝離的現象，顯見氩氧化納溶液對於 ==物:膜同樣具有良好的剝離能力。下表記錄了為 驗液濃度、驗液溫度、鹼液與銦錫氧化物_接觸時間以 201213551 W3 35650twf.doc/n 及銦錫氧化物薄膜之剝離情況。 再者，於其它實施例中’若鹼液包含如上所述本發明 實施例的強鹼成份濃度及如上所述本發明實施例的至少其 中一種添加成份，並配合如上所述本發明實施例的驗液溫 度時’鹼液與銦錫氧化物薄膜接觸而可產生剝落效果的時 間可稍微變更為例如是約介於20秒至300秒之間。Λ Λ A W W W A i J Detailed description is made for steps S11 to S140. In the present embodiment, the material to be recovered referred to in step S110 is, for example, a color light-emitting substrate, and the color filter substrate has a common electrode, and the co-energization is a copper-tin oxide film. In this embodiment, the material to be recycled must be a color filter substrate, and other methods for recovering the film having an indium tin oxide film can also be used in the recovery method of this embodiment. In other feasible embodiments, the object to be recovered mentioned in step S110 may be an active device array substrate (such as a thin film transistor array substrate) having a plurality of halogen electrodes, and the halogen electrodes are indium tin oxide. Film. Alternatively, the object to be returned is, for example, a solar substrate having a plurality of transparent electrodes, wherein the solar substrate has a plurality of solar cells, and the transparent electrodes are, for example, indium tin oxide films. Further, the object to be reclaimed is, for example, a wafer having a plurality of transparent electrodes, wherein the wafer has a plurality of circuit units, and these transparent electrodes are, for example, indium tin oxide films. In step S120, the lye is supplied to the indium tin oxide film to be reclaimed by spraying or immersing, for example, and the main component of the lye is potassium hydroxide or hydroxide. Sodium or a mixture of potassium hydroxide and sodium hydroxide. Wherein, the function of the lye is to destroy the indium tin oxide film to be reclaimed and the bonding ability of the film under the indium tin oxide film to be reclaimed and/or the indium tin oxide film located in the object to be reclaimed In addition to the structure of the lower film, the hydroxide, sodium hydroxide, other components may be added to the test liquid, such as domain lysate, a solvent, an alcohol solvent, and/or a heterogeneous solution of at least +. The main functions of the above-mentioned respective additives are described as follows: (1) Monoethanolamine_A" softens the organic polymer to make it easy to peel off the glass substrate. (7) 仏 Methyl toxin leakage ^ softening ^ 73 35650twf.doc / n organic polymer, making it easy to peel off the glass substrate. (3) Triethanolamine (TEA): Mainly used to help dissolve organic polymer photoresist in water. (4) Isopropanol (IPA): Mainly used to help N-mercaptopyrrolidone (MEA) solvent and N-mercaptopyrrolidone (NMP) solvent and water miscible. (5) Ethylene glycol butyl ether (BC) is mainly used for wetting and softening the organic polymer' to make it easy to peel off the glass substrate. When the above-mentioned lye is added, the organic polymer under the indium tin oxide film is swollen and the surface structure is softened, resulting in a decrease in the adhesion between the upper indium tin oxide film and the indium tin oxide. The rate at which the film peels off. It should be noted that if there is no organic polymer under the tin oxide film to be recycled, it is not necessary to add other components in the lye, but the additives may be determined depending on the products manufactured by each company. In the present embodiment, when the alkali solution is a potassium hydroxide solution, the concentration thereof is, for example, substantially greater than or equal to 7% by weight; when the alkali solution is a sodium hydroxide solution, the concentration thereof is, for example, qualitatively greater than or equal to 3 %wt. The higher the concentration of the alkali solution, the better the peeling effect of the indium tin oxide film. Further, the temperature of the alkali liquid is, for example, about 20 ° C to 75 ° C, and the time during which the alkali liquid is in contact with the indium tin oxide film is, for example, about 120 seconds to 300 seconds. Taking a KOH solution with a concentration of about 7% of a tree and a temperature of about 30 degrees Celsius as an example, the indium tin oxide film is cracked and peeled off in about 240 seconds after contact with the potassium hydroxide solution. The oxidation_solution has good peeling ability for the indium tin oxide film. The concentration of the indium tin oxide film at a concentration of about 3% by weight and a temperature of about 6 degrees Celsius is about == rupture and peeling after contact with the sodium hydroxide solution. It is obvious that the argon oxide nano solution is for the == material: film. It also has good peeling ability. The following table records the peeling of the influent concentration, the temperature of the test solution, the lye and indium tin oxide_contact time to 201213551 W3 35650twf.doc/n and the indium tin oxide film. Furthermore, in other embodiments, 'if the lye comprises the concentration of the strong base component of the embodiment of the invention as described above and at least one of the additives of the embodiment of the invention as described above, and in combination with the embodiment of the invention as described above At the time of the test temperature, the time during which the alkali solution is brought into contact with the indium tin oxide film to cause the peeling effect may be slightly changed to, for example, about 20 seconds to 300 seconds.
氣氧化納 3% (Wt%) 溫度 30 40 50 60 70 時間 120 240 120 240 120 240 120 240 120 240 狀態 無異 狀 - 無異 狀 — 暗色 班點 — 暗色 班點 — 暗色 班點 — 剝離 NA NA „ NA V V 氩氧化納 7% (wt%) 溫度 3 0 4 0 5 0 f ，0 7 0 時間 120 240 120 240 120 240 120 240 120 240 狀態 無異 狀 — 暗色 班點 暗色 班點 — 暗色 班點 — 剝離 NA NA V V 氣氧化納 14.5% (wt%) 溫度 35 40 50 6( ) 7 0 時間 120 240 120 240 120 240 120 240 120 240 狀態 暗色 班點 暗色 班點 暗色 班點 暗色 班點 暗色 班點 暗色 班點 剝離 NA V V V V V 氫氣化鉀 3% 溫度 30 40 5C ) 60 7 0 時間 120 240 120 | 240 120 240 120 240 120 240 201213551 73 35650twf.doc/nGas oxidation nano 3% (Wt%) Temperature 30 40 50 60 70 Time 120 240 120 240 120 240 120 240 120 240 Status no abnormality - no abnormality - dark shift point - dark shift point - dark shift point - strip NA NA „ NA VV Argon Oxide 7% (wt%) Temperature 3 0 4 0 5 0 f , 0 7 0 Time 120 240 120 240 120 240 120 240 120 240 Status no abnormality – dark shift point dark shift point – dark shift point — Stripped NA NA VV Gas Oxide 14.5% (wt%) Temperature 35 40 50 6( ) 7 0 Time 120 240 120 240 120 240 120 240 120 240 Status Dark Class Dark Spots Dark Classes Dark Classes Dark Classes Dark shift point stripping NA VVVVV Hydrogenated potassium 3% Temperature 30 40 5C ) 60 7 0 Time 120 240 120 | 240 120 240 120 240 120 240 201213551 73 35650twf.doc/n
離的效果越好’而鹼液與銦錫氧化物薄膜接觸的時間越 長’銦錫氧化物薄膜剝離的效果越好。 承上述’此領域具有通常知識者可以採用不同的鹼液 濃度與溫度，並且控制鹼液與銦錫氧化物薄膜接觸的時 間，以使銦錫氧化物薄膜呈現不同的剝離程度。 本實施例採用驗液使銦錫氧化物薄膜剝離有別於習 知的草酸蝕刻製程，不論是經過回火製程之銦錫氧化物薄 膜（結構較為緻密）以及未經過回火製程之銦錫氧化物薄 膜（、、〇構較不敏密），本實施例所使用之驗液皆可使其剝 ，。此外，在銦錫氧化物薄膜與鹼液接觸後，銦錫氧化物 薄膜會出現龜裂的現象並逐漸產生小面積的剝離，之後， /3 35650twf.dac/n 201213551 銦錫氧化物薄膜會產生較大面積的剝離，直到大部分之銦 錫氧化物薄膜都從待回收物上剝離為止。此時，銦錫氧化 物薄膜會混合於鹼液中，但不會溶解於鹼液令，且混合於 鹼液中的銦錫氧化物薄膜會呈現粉末狀或細小塊狀。:於 混合於鹼液中的銦錫氧化物薄膜不會溶解於鹼液，因此不 需採用離子交換的方式（樹脂塔）進行銦回收。 在本實施例中，若驗液與銦錫氧化物薄膜接觸之後仍 然無法完全使銦錫氧化物薄膜被移除，則可選擇性地是使 用一酸液，並將此酸液喷灑於待回收物的銦錫氧化物薄膜 fj將待回收物上殘留之銦錫氧化物薄膜移除。舉例而 言，前述之酸液之成分包括鹽鐵系（FeCl3+Hcl)溶液、王水 (HN〇3+HCl)或是硝酸系溶液。值得注意的是’酸液會與殘 留的銦錫氧化物薄膜反應而溶解於酸液中。 、在步驟S130與步驟S140中，吾人可透過離心系統或 過濾系統來收集剝離的銦錫氧化物薄膜（粉末狀或細小塊 狀之銦錫氧化物），以將銦錫氧化物薄膜與鹼液之混合物 分離。廣義而言，這些粉末狀或細小塊狀之銦錫氧化物為 含銦之粉末，而這些含銦之粉末可以提供給粗銦回收廠商 進行後續的純化。 【第二實施例】 圖2為本發明第二實施例之基板回收方法之流程圖。 請參照圖2 ’本實施例之基板回收方法包括下列步驟（s 2 i 〇 〜S240)。首先，提供一元件基板，此元件基板包括一基 板、多個元件薄膜以及一銦錫氧化物薄膜，且此銦錫氧化 11 201213551 35650twf.doc/n 物薄膜覆蓋於基板與元件薄膜上（步驟§210)。接著，使 一驗液與銦錫氧化物薄膜接觸，以使銦錫氧化物薄膜自元 件薄膜剝離並混合於鹼液中，其中鹼液之成分包括氫氧化 鉀及/或氫氧化鈉等強鹼性成份（步驟S220)。接著，使 一酸液與銦錫氧化物薄膜接觸，以自基板上移除殘留之銦 錫氧化物薄膜（步驟S230)。之後，使用鹼液移除前述之 元件薄膜（步驟S240)。較佳地，可完全移除前述之元件 薄膜（步称S240)。若前述元件薄膜，尚有殘留時，可再 配合其它移除步驟來完全移除，例如：研磨步驟、溶解步 驟、或其它合適步驟、或上述之組合。 在本實施例中’步驟S210所提及之元件基板例如為 包含多個彩色濾光薄膜與共通電極（即銦錫氧化物薄膜） 之彩色濾光基板，或者是包含多個主動元件與晝素電極（即 銦錫氧化物薄膜）之主動元件陣列基板，如薄膜電晶體陣 列基板。或者，待回收物例如是具有多個透明電極之太陽 能基板’其中太陽能基板具有多個太陽能單元，而這些透 明電極例如是銦錫氧化物薄膜。此外，待回收物例如是具 有多個透明電極之晶圓，其中晶圓具有多個電路單元，而 這些透明電極例如為銦錫氧化物薄膜。以下將以具有多個 彩色濾光薄膜與共通電極之彩色濾光基板為範例，搭配圖 2以及圖3A至圖3D.進行詳細之說明，但不限於此。 請參照圖2與圖3A，首先，提供一彩色濾光基板300 (步驟210)，此彩色濾光基板3〇〇具有多個彩色濾光薄 膜310與共通電極320，且彩色濾光薄膜310與共通電極 320皆位於基板SUB上。從圖3A寸知，除了彩色濾光薄 12 35650twf.doc/n 201213551 , ι /3 膜310與共通電極320之外，彩色濾光基板300還可選擇 性地包括黑矩陣BM、介電層〇C等，其中彩色濾光薄膜 310、黑矩陣BM與介電層〇C可被視為前述之元件薄膜。 此外’根據不同型態之應用，彩色濾光基板300可選擇性 地於共通電極320上設置間隙物ps及/或配向突起。 接著請參照圖2與圖3B，使鹼液與彩色濾光基板3〇〇 上之共it電極320接觸，以使共通電極320從介電層〇c 剝離並混合於鹼液中，其中鹼液之成分包括氫氧化鉀及/ 或氫氧化鈉（步驟S220)。在步驟S220中，鹼液例如係 採用喷，(spray)或者是浸泡的方式提供至待回收物之銦錫 ，化物薄膜上，而所使用之鹼液的主要成分為氫氧化鉀、 氫氧化鈉或氫氧化鉀與氫氧化鈉之混合物。其中，鹼液的 功能是用以破壞待回收物之銦錫氧化物薄膜與位於待回收 物之銦錫氧化物薄膜下方薄膜的鍵結能力及/或位於待回 ，物之銦錫氧化物薄媒下方薄膜的結構。除了氫氧化卸、 氫氧化納之外，驗液巾射添加其他成分，㈣_溶劑、 ，胺類溶劑、醇類溶劑及/或介面活性鮮，其相關成分功 能如第-實施例中所述，不再贅述。需注意的是，若待回 收物之銦錫氧化物薄膜下方不具有有機聚合物，驗液中就 需要添加其它成份，但可需視各公司所製造的產品 添加劑。值得注意岐，在使驗 _PS及配向突料隨著共通電極= 古且在使用驗液剝除共通電極32G的同時，驗液 310、里矩使：分的元件（如薄膜彩色濾光薄膜 …矩陣ΒΜ、介電層OC)被移除。 13 35650twf.doc/n 201213551 73 μ 73 從圖3B可知，部分的共通電極320會與基板SUB直 接接觸，且與基板SUB直接接觸的共通電極320不容易被 剝除，因此需要針對此部分的共通電極320做進一步的處 理，將詳述於後。 關於鹼液之濃度、溫度、鹼液與銦錫氧化物薄膜接觸 的時間以及銦錫氧化物薄膜的剝離情況，已詳述於第一實 施例中，故於此不再重述。 接著請參照圖2與圖3C，在與鹼液接觸後，與基板 SUB直接接觸的共通電極32〇未被順利剝除，本實施例採 用酸液，並使酸液與殘留的共通電極32〇接觸，以自基板 SUB上移除殘留之共通電極32〇(步驟S23〇)。 接者請參照圖2與圖3D，由於元件薄膜（薄膜彩色 濾光薄膜310、黑矩陣bm、介電層〇c)在步驟S220中 並未被元全移除’因此’本實施例可再: 欠使用驗液以移除 前述之2件薄膜（步驟S，，較佳地，可完全移除前述 之兀件薄膜（步驟SMO) ^若前述元件薄膜，尚有殘留時， 可再配合其它移除步驟來完全移除，例如：研磨步驟、溶 ==收薄膜與一 這些粉末狀或細小·之_魏物為^這 201213551 4 --------/i 35650twf.doc/n 些含銦之粉末可以提供給粗銦回收廠商進行後續的純化。 本發明之前述實施例採用鹼液與銦錫氧化物薄膜接 觸，以使銦錫氧化物薄膜自待回收物（如基板）上剝離而 混合於鹼液中，進而達到銦錫氧化物薄膜或基板回收之目 的。The better the effect of the separation is, the longer the contact time of the alkali solution with the indium tin oxide film is. The effect of the peeling effect of the indium tin oxide film is better. Those of ordinary skill in the art can use different lye concentrations and temperatures, and control the time during which the lye is contacted with the indium tin oxide film to cause the indium tin oxide film to exhibit different degrees of peeling. In this embodiment, the indium tin oxide film is stripped by the liquid test, which is different from the conventional oxalic acid etching process, whether it is a tempering process of indium tin oxide film (thickness in structure) and indium tin oxidation without tempering process. The film (, the structure is less sensitive), and the test liquid used in the embodiment can be peeled off. In addition, after the indium tin oxide film is contacted with the lye, the indium tin oxide film may crack and gradually form a small area of peeling, after which the /3 35650twf.dac/n 201213551 indium tin oxide film is produced. A large area of peeling is until most of the indium tin oxide film is peeled off from the material to be recovered. At this time, the indium tin oxide film is mixed in the alkali solution, but it is not dissolved in the alkali solution, and the indium tin oxide film mixed in the alkali solution is in the form of a powder or a small block. The indium tin oxide film mixed in the alkali solution is not dissolved in the alkali solution, so that indium recovery is not required by means of ion exchange (resin tower). In this embodiment, if the indium tin oxide film is not completely removed after the test solution is in contact with the indium tin oxide film, an acid solution may be selectively used, and the acid solution is sprayed. The indium tin oxide film fj of the recovered material removes the indium tin oxide film remaining on the object to be recovered. For example, the components of the above acid solution include a salt iron (FeCl3 + Hcl) solution, aqua regia (HN 〇 3 + HCl) or a nitric acid solution. It is worth noting that the acid solution reacts with the remaining indium tin oxide film to dissolve in the acid solution. In step S130 and step S140, the person may collect the stripped indium tin oxide film (powder or fine indium tin oxide) through a centrifugal system or a filtration system to deposit the indium tin oxide film and the alkali solution. The mixture is separated. Broadly speaking, these powdered or finely divided indium tin oxides are indium containing powders, and these indium containing powders can be supplied to the crude indium recycler for subsequent purification. [Second Embodiment] Fig. 2 is a flow chart showing a method of recycling a substrate according to a second embodiment of the present invention. Referring to Fig. 2, the substrate recycling method of the present embodiment includes the following steps (s 2 i 〜 to S240). First, an element substrate is provided. The element substrate comprises a substrate, a plurality of component films, and an indium tin oxide film, and the indium tin oxide film covers the substrate and the component film (step § 210). Next, an inspection liquid is brought into contact with the indium tin oxide film, so that the indium tin oxide film is peeled off from the element film and mixed in the alkali solution, wherein the alkali liquid component includes a strong base such as potassium hydroxide and/or sodium hydroxide. Sexual component (step S220). Next, an acid solution is brought into contact with the indium tin oxide film to remove the residual indium tin oxide film from the substrate (step S230). Thereafter, the aforementioned element film is removed using an alkali solution (step S240). Preferably, the aforementioned element film (step S240) can be completely removed. If the aforementioned element film remains, it may be completely removed by other removal steps, such as a grinding step, a dissolving step, or other suitable step, or a combination thereof. In the present embodiment, the element substrate mentioned in the step S210 is, for example, a color filter substrate including a plurality of color filter films and a common electrode (ie, an indium tin oxide film), or includes a plurality of active elements and a halogen. An active device array substrate of an electrode (ie, an indium tin oxide film), such as a thin film transistor array substrate. Alternatively, the object to be reclaimed is, for example, a solar energy substrate having a plurality of transparent electrodes, wherein the solar substrate has a plurality of solar cells, and these transparent electrodes are, for example, indium tin oxide films. Further, the object to be reclaimed is, for example, a wafer having a plurality of transparent electrodes, wherein the wafer has a plurality of circuit units, and the transparent electrodes are, for example, indium tin oxide films. Hereinafter, a color filter substrate having a plurality of color filter films and a common electrode will be exemplified, and detailed description will be made with reference to Fig. 2 and Figs. 3A to 3D. However, the present invention is not limited thereto. Referring to FIG. 2 and FIG. 3A, first, a color filter substrate 300 is provided (step 210). The color filter substrate 3 has a plurality of color filter films 310 and a common electrode 320, and the color filter film 310 and The common electrode 320 is located on the substrate SUB. As can be seen from FIG. 3A, in addition to the color filter thin film 12 35650 twf.doc/n 201213551, the ι /3 film 310 and the common electrode 320, the color filter substrate 300 can also optionally include a black matrix BM, a dielectric layer 〇 C, etc., wherein the color filter film 310, the black matrix BM, and the dielectric layer 〇C can be regarded as the aforementioned element film. Further, the color filter substrate 300 can selectively provide spacers ps and/or alignment protrusions on the common electrode 320, depending on the application of the different types. 2 and FIG. 3B, the lye is brought into contact with the common electrode 320 on the color filter substrate 3, so that the common electrode 320 is peeled off from the dielectric layer 〇c and mixed in the alkali solution, wherein the alkali solution The components include potassium hydroxide and/or sodium hydroxide (step S220). In step S220, the lye is supplied to the indium tin and the film to be recovered, for example, by spraying or immersing, and the main component of the lye used is potassium hydroxide or sodium hydroxide. Or a mixture of potassium hydroxide and sodium hydroxide. Wherein, the function of the lye is to break the bonding ability of the indium tin oxide film to be reclaimed and the film under the indium tin oxide film to be reclaimed and/or to be thinner than the indium tin oxide to be returned The structure of the film under the medium. In addition to the hydrogenation and sodium hydroxide, the test liquid spray is sprayed with other components, (4) solvent, amine solvent, alcohol solvent and/or interface active, and its related components function as described in the first embodiment. ,No longer. It should be noted that if the indium tin oxide film to be recycled does not have an organic polymer underneath, it is necessary to add other components in the test, but it is necessary to consider the product additives manufactured by each company. It is worth noting that, in the test _PS and the alignment material with the common electrode = ancient and in the use of the test stripping the common electrode 32G, the test liquid 310, the inner moment of the sub-component (such as the film color filter film ...matrix 介, dielectric layer OC) is removed. 13 35650twf.doc/n 201213551 73 μ 73 As is clear from FIG. 3B, part of the common electrode 320 is in direct contact with the substrate SUB, and the common electrode 320 directly contacting the substrate SUB is not easily peeled off, so common to this portion is required. Electrode 320 is further processed and will be described in detail later. The concentration of the alkali solution, the temperature, the contact time of the alkali solution with the indium tin oxide film, and the peeling of the indium tin oxide film are described in detail in the first embodiment, and therefore will not be repeated here. 2 and FIG. 3C, after the contact with the alkali solution, the common electrode 32 that is in direct contact with the substrate SUB is not smoothly stripped. In this embodiment, the acid solution is used, and the acid solution and the residual common electrode 32 are clamped. The contact is performed to remove the residual common electrode 32A from the substrate SUB (step S23A). Referring to FIG. 2 and FIG. 3D, since the component film (the thin film color filter film 310, the black matrix bm, and the dielectric layer 〇c) is not completely removed in step S220, the present embodiment can be further : Refusing to use the test liquid to remove the above two pieces of film (step S, preferably, the above-mentioned element film can be completely removed (step SMO) ^ If the aforementioned element film has residual, it can be combined with other The removal step is completely removed, for example: grinding step, dissolution == film and a powder or fine. _Weiwu is ^201213551 4 --------/i 35650twf.doc/n The indium containing powder can be supplied to the crude indium recovery manufacturer for subsequent purification. The foregoing embodiment of the present invention uses an alkali solution in contact with the indium tin oxide film to cause the indium tin oxide film to be self-recovered (such as a substrate). Stripping and mixing in an alkali solution to achieve the purpose of indium tin oxide film or substrate recovery.
因此，本發明之前述實施例採用鹼液與透明導電材 料，例如：銦錫氧化物、銦錫鍺氧化物、銦鋅氧化物、鋁 鋅氧化物、或其它合適的材料、或上述材料的 結構，皆可被本發明所賴施行方法將透料電材 板回收之目的。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限，本發明’贿熟習此技藝者，在不脫離本發明之精神 =範圍内，當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1為本發明第一實施例之銦錫氧化物薄膜 之流程圖。 圖2為本發明第二實施例之基板回收方法之流程圖。 圖3A至圖3D為本發明第二實施例之基板回收 的流程剖面示意圖。 ' 15 201213551 _ 73 35650twf.doc/n 【主要元件符號說明】 S110〜S140 :銦錫氧化物薄膜回收方法之步驟 S210〜S260 :基板回收方法的步驟 300 :彩色濾光基板 310 :彩色濾光薄膜 320 :共通電極 SUB :基板 BM :黑矩陣 OC :介電層 PS :間隙物 P:配向突起Accordingly, the foregoing embodiments of the present invention employ an alkali solution and a transparent conductive material such as indium tin oxide, indium tin antimony oxide, indium zinc oxide, aluminum zinc oxide, or other suitable material, or a structure of the above materials. The purpose of recovering the dielectric material board by the method of the present invention can be recovered. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and the present invention may be modified and retouched without departing from the spirit of the invention. The scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart showing an indium tin oxide film according to a first embodiment of the present invention. 2 is a flow chart of a substrate recycling method according to a second embodiment of the present invention. 3A to 3D are schematic cross-sectional views showing a process of substrate recovery according to a second embodiment of the present invention. ' 15 201213551 _ 73 35650twf.doc/n [Description of main component symbols] S110 to S140: Steps for recycling indium tin oxide film S210 to S260: Step 300 of substrate recovery method: color filter substrate 310: color filter film 320: common electrode SUB: substrate BM: black matrix OC: dielectric layer PS: spacer P: alignment protrusion