1305734 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種回收其 ,.,, 土板之表面處理方法及一種 以该方法製成之透明基板，特 矛 ^ 5| ^ * 0 .. ^ 扎—種可應用於液晶顯 丁為產業，且猎由移除該回收基板之功能層及形成 固化層來進行該回收基板之表面處理的方法。 【先前技術】1305734 IX. Description of the Invention: [Technical Field] The present invention relates to a method for recovering the surface of the earth plate, and a transparent substrate made by the method, the special spear ^ 5| ^ * 0 .. ^ Zha-type can be applied to the liquid crystal display industry, and the method of removing the functional layer of the recovered substrate and forming a solidified layer to perform surface treatment of the recovered substrate. [Prior Art]
目前市面上之各項光電產品(如液晶電視、電腦榮幕 手機勞幕、數位相機螢幕等）的製程中大多皆會使用至小 透明基材(如玻璃或石英等)’並於該透明基材上形成多㈣ 具有特^功能之薄膜層（例如電極層、介 声、 緣層、抗磨損層、抗反射層等)。然而，由於光電產:對: 各階段之製程品管的要求相當嚴格，因此，在薄膜她 過程或是後續Μ絲中，可能會產生許多廢棄半成品（女 形成有多層薄膜層之基材），而致使整個製程成本增加，^ 同時造成環境之污染。 以液晶顯示器為例，其製程可分為三個階段：第一階 段為電極圖案(pattern)形成製程、第二階段為面板組裝 (panel assembly)製程及第三階段為模組（m〇dule)製程。以主 動式（active matrix)驅動之液晶顯示器而言，電極圖案形成 製程包含薄膜電晶體（thin fiim transist〇r)之製備及彩色滅光 片（color filter)之製備。在第一階段製程中，除了淘汰不符 規格之基板之外，又可能因為基板表面不平坦或塗佈不均 勻等問題而淘汰基板。在第二階段之面板組裝製程中，則 1305734 可旎因為薄膜電晶體及彩色濾光片無法配對組裝，而產生 更多廢棄面板。此外，加上目前基板尺寸逐步放大，於運 送過程中更容易使基板破損或鍍土襄，而產生更多的廢棄芙 板。 …土 現今對於廢棄基板之回收處理，大多是採用掩埋方式 ，或是將基板予以破碎，再進—步製作為紅碑、陶竟製^ 或裝飾建材，但是以上之时處理方式皆未達成有效之: 利用’也無法降減電產品之製作成本。此外，廢棄基板 於回收再經處理後’還必需符合各項光電產品之基板：標 準規格，特別是表面粗糖度（surface roughness)之要求，2 須具有良好之穿透率而不會影響後續之應用。以薄膜電晶 體基板而言，基板之表面粗糙度一般是指在扇職之測量 長度下’利用介於0.8 _至8 mm之間的截取基準長度 ㈣offstandardlength)所測得之平均最大高度粗趟度，其= 值^〇·1 μπι ;另’以光電產業之光罩基板而言，則是直接 測量整片石英光罩基板之表面的最大高度粗糙度及最小高 度粗糙度’再藉由將最大高度粗糙度減去最小高度粗糙度 而獲得表面粗㈣之數值，且此數值須請叫。因此，針 對光電產w所產生之廢棄基板’如何有效地將廢棄基板予 以回收，並使其符合基板之標準規格而可重新投入光電產 :口之製程中，以降低光電產品之製作成本，以目前業界而 吕’仍存在極大之需求。 【發明内容】 因此，本發明之目的，即在提供—種可將廢棄基板有 1305734 效地回收再利用、處理步驟簡單且低廉之回收基板之表面 處理方法。 本發明之另一目的在於提供一種適用於光電產業且由 上述方法製成之透明基板。 於疋’本發明之回收基板之表面處理方法係對一具有 一透明底層以及至少一位於該底層上且部份或全部覆蓋該 " 底層之功能層的回收基板進行表面處理，該方法包含：利 * 用粗抛（laPPing)、喷砂法（sand-blasting method)、電漿法 (Plasma method)、乾式蝕刻法（dry etching meth〇d)或化學濕 式蝕刻法（chemical wet etching meth〇d) ’將該回收基板之功 能層予以移除，使得該回收基板之透明底層具有一粗糙面 ;於該透明底層的粗糙面上形成一塗層；及將該塗層予以 固化而形成一穿透率為8。%以上且具有一表面：糙度 (surface roughness) S 80 μπι的表面之透明固化層。 本發明之透明基板是包含一穿透度為8〇%以上且具有 • —粗糙面之透明表面粗糙層’以及-覆蓋於該透明表面粗 糙層之粗糙面上且具有80%以上之穿透度之透明固化層。 該透明固化層是由一材料所製成且其表面之表面粗糙度$ 80 μηι。 習知基板之表面處理方法大多僅運用粗抛及細抛 (P⑽lng)兩種方式進行，如依此方式進行时基板之回收 ㈣用處理，則由於时基板具有多層功能層，因此需要 花費更長時間進行粗拋，才可將功能層移除，且必需=該 回收基板之底層表面的粗极度降低至細抛機器可接受之範 7 ,1305734 圍，才可直接進行細拋步驟，再者，將該底層表面細抛至 符合表面粗糙度之標準規格尚需耗費許多工時，如此將導 致整個處理時間增加，並同時致使回收處理之費用增加， 所以目前許多光電廄還是選擇直接將報廢基板予以:棄而 不進行回收。然而，本發明之回收基板之表面處理方法係 藉由先將該回收基板之功能層移除，且無須考量該回收基 板之底層表面的粗輪度，便可直接於該回收基板之底層^ 粗糙面上形成一塗層，最後只需將該塗層予以固化並形成 該透明固化層，即完成本發明之回收基板之表面處理。此 外，本發明方法中所形成之透明固化層係由特定組成物固 化而形成，使得該透明固化層之穿透率為s〇%以上，所以 完全不會影響後續應用之光學性質，且可利於光電薇進行 報廢基板之回收，同時降低對環境之損害。 【實施方式】 ° 適用於本發明方法之回收基板是具有一穿透率為_ 以上上之透明底層以及至少一位於該底層上且部份或全部覆 蓋該底層之功能層。上述之『回收基板』一詞係表示經回 收之任何於光電或半導體產品之各個製程步驟中所淘汰之 基板，較佳地，該时基板是經回收之薄膜電晶體基板、 彩色遽光片基板或光罩基板。而於本發明之—具體例中， 該回收基板是薄膜電晶體基板；於本發明之另一具體例中 ，該回收基板是光罩基板。 該回收基板之透明底層可由任何習知作為基板之材料 所製成’較佳地’該回收基板之底層是由玻璃或石英所製 8 J305734 成。該回收基板之功能層可為一層或多層，且包含例如電 極層、介電層、保護層、絕緣層、抗磨損㉟、抗反射層等 ’且視實際用it㈣擇部份或全部覆蓋該底層。 本务明之回收基板之表面處理方法包含：利用粗拋法 貪〜法、電裝法、乾式㈣法或化學濕式钱刻法，將該 回收基板之功能層μ移除’使得該时基板之底層具有 -粗糙面；於該底層的粗糙面上形成一塗層；以及將該塗 層予以固化而形成_穿读故0Λ0/、，， 取芽透率為80%以上且具有一表面粗糙 度$80μιη的表面之透明固化層。 “曰『表面粗輪度』—詞係依據所使用之回收基板的用途 來置測及定義。當所使用之回收基板後續欲作為薄膜電晶 體基板時’所形成之透明固化層之表面的表面粗糙度是在 200 mm之測里長度下，利用介於〇·8 _至8 _之間的截 取基準長度所測得之平均最大高度粗糙度來定義。而當所 使用之回收基板後續欲作為光罩基板時，所形成之透明固 化層之表面的表面粗链度是直接測量整片石英光罩基板之 表面的最大问度粗糖度及最小高度粗糖度，再藉由將最大 南度粗链度減去最小高度粗縫度而獲得表面粗糖度之數值 〇 ^ α玄回收基板之功能層的移除方式可依據該功能層的性 質而由上述方法進行選擇使用。當該回收基板是經回收之 办色濾光片基板或光罩基板，較隹地，該回收基板是利用 化學蝕刻法來移除該功能層。當該回收基板為經回收之薄 膜電晶體基板’較佳地，該回收基板是利用粗抛法來移除 .1305734 該功能層，且移除該功能層後於該底層所形成之粗糙面具 有大於0.1 μιη之表面粗糙度。 車父佳地，該塗層是由一組成物所構成。 構成該塗層之組成物係選用可固化、固化後穿透率為 80%以上且具有較佳耐熱性及耐化性之任何材料，較佳地， 該組成物含有一填充材及一溶劑。本發明之—具體例中所 使用之組成物是選用與日本T〇ray公司所製造之品名為sf_ P5〇l〇的試劑成分相似但未含顯影劑之材料，此材料於固化 後對於異丙醇、丙啊、二甲苯、N_甲基吼洛烧哪_ methy丨Pyrrolidone)等溶劑及氧化銦錫蝕刻劑具有良好之耐 化性，且於230°C以上之加熱溫度下仍可維持98%之穿透 率。 較佺地，该填充材是選自於：丙烯酸系樹脂 resm)、環氧樹脂（ep〇xy resin)、鐵敦龍（Tefi〇n)、聚矽氧烷 (polysiloxane)或此等之一組合。而於本發明之一具體例中 ’该填充材為聚梦氧院，此聚梦氧烧係、與由日纟τ。㈣公司 所製造且品名為SF指1Q之材料中所含之聚妙氧烧相同。 較佳地，該溶劑是選自於雙丙酮醇（diacetone alc〇h〇l) 、γ- 丁内酯（Y-bUtyr〇lact〇ne)、二乙二醇二甲⑽、丙二醇甲基 I 乙 S曰（propylene giyC〇1 methyl 灿以已⑽伽，pgmEA)或此 等之一組合。而於本發明之一具體例中，該溶劑是雙丙酮 醇及γ-丁内酯之一組合。 於本發明之組成物中，該填充材及該溶劑之比例可依 據實際需要進行調整’較佳地’於該組成物中，該填充材 10 1305734 之含量範圍是介於2 wt%至35 wt%之間。於本發明之一具 體例中’ §玄填充材之含量為3 5 ,wt%。 該塗層可運用任何習知方法來形成於該粗糙面上，較 佳地’該塗層是藉由旋轉塗佈法（spin c〇ating meth〇d)、喷 灑塗佈法（spray coating method)、浸潰塗佈法（dip coating method)、刮刀塗佈法（scrap c〇ating meth〇d)或細縫刮刀塗佈 法（silt coating method)而形成於該粗糙面上。於本發明之一 ^ 具體例中，該塗層是藉由利用旋轉塗佈法而形成。 於该底層之粗糖面上所形成之塗層可依據實際需要， 選擇性地變化所塗佈之厚度，例如高於、等於或低於該底 層之粗棱面之最大咼度。而該塗層之固化方式亦可配合塗 佈方式或依據習知固化方式（如加熱或照光）進行，較佳地， 該塗層是藉由加熱來固化；更佳地，該加熱溫度是介於 〇 C至650 C之間，又更佳地，該加熱溫度是介於 至350°C之間。 • 較佳地，本發明之方法更包含將該透明固化層予以拋 光之步驟。值得一提的是，此拋光步驟需視該透明固化層 之表面的粗糙度是否符合後續應用之標準規格而決定是否 進行。 % . 該底層之粗糙面的粗糙度是由多數個開口朝外的孔洞 所造成，且該透明固化層可選擇性地填滿或未完全填滿該 等孔洞。若後續欲用於TFT製程（基板之表面粗糖度需$〇1 且當該透明固化層是填滿該等孔洞時，表面粗链度可 此疋S0.1 μιη或大於〇.1 μηι ’若表面粗韃度^〇1叫，則 11 1305734 經表面處理之回收基板可直接 枓许4·认A « 1 r 1表私’右表面粗 ‘度……，則該透明固化層表面必須再進行拋光， 以使表面粗糙度S0.1 μη]。當节逆 辇 Λ g 口化層疋未完全填滿該 孚孔洞時，表面粗糙度大於 而d於Μ _’所以該透明固化層表 面必須再進行拋光’以使表面粗糙度m叫。 严明之方法亦可依據實際需要進行調整變化，例如 二回:;Γ厚度不符合後續應用時，可藉由反覆形 應用之祕Γ曰及透明固化層’直至該基板厚度符合後續 此外，本發明之透明基板包含—透明表面粗糙層及一 透明固化層。該透明固化声异薄 Μ 層X覆盖於該透明表面粗糖層之 粗糙面上且具有80%以上穿 . f透度，並由~材料所製成， 而该透明固化層之表面的表面粗概度_μ1η。 成 較佳地，製成該透明固化層之材料是選自於 之丙婦酸系樹脂、經固化之環 、、、、口化 經固化之聚嫩或此等：τ 、化之嶋I、 士， 4之—組合。在本發明之一且㈣ 中，该材料為經固化之聚矽氧烷。 該透明表面粗糙層可使用如上述之透明底声之 較佳地，該透明表面㈣層^麵或石英所製成。 英：Γ=，也就是當該透明表面粗韃層是由石 央所ι成時，較佳地’該透明固化 $80μιη。 之表面的表面粗糙度 以TFT基板而言，也就 壤所梦成日年明表面粗趟層是由玻 成時，車父佳地，該透明表面粗鍵層之粗才造面的表面 12 1305734 粗糙度大於0.1 μιη。且較佳地，該透明固化層之表面的表 面粗縫度$ 〇. 1 μπι。 該透明基板較佳可藉由利用上述之回收基板之表面處 理方法而製得。 有關本發明之如述及其他技術内容、特點與功效，在 以下配合參考圖式之二個具體例的詳細說明中，將可清楚 的呈現。 在本發明被詳細描述之前，要注意的是，在以下的說 明内容中，類似的元件是以相同的編號來表示。 [實施例] <具體例1> 筝閲圖 該回收基板 係為經回收之TFT基板，其 具有-穿透率& 8G%以上之透明玻璃底㉟n，以及一位於 該底層U上且全部覆蓋該底層U之圖案膜12，該圖案膜 是”數個功能層121所構成。該回收基板」的表面處理 方法是先利用粗拋法，藉由利用—研磨機（由韓國CMT公司 所製造），並運用粒徑為1G μΓη之碳化㈣液及鐵研磨塾， 而於45 rpm之速率及3分鐘之研磨時間下，將該回收基板 1之圖案膜丨2予以移除，並以純水進行清洗，使得該回收 :二底層U具有一粗糙面1U。接著利用-旋轉塗佈 —TOK公司所製造）’以4〇〇rpm之速率及汕秒之 日^間進行旋轉塗佈，將該組成物（選用未含有顯影劑之由日 ^ y A司所製造，品名為SF-P5010之材料，其是由聚 夕？U兀雙丙綱醇及γ_ 丁内醋所構成，其中聚秒氧烧於整個 13 1305734 組成物中之含量為35 wt%)塗佈於該底層u的粗糙面m 上，以形成一塗層。然後將此回收基板1放置於一加熱板 上’並於300。(：下進行固化，在歷時3〇分鐘後，使該塗層 固化而形成一透明固化層2。再利用研磨機（由韓國CMT公 司所製造），並運用粒徑為〇_3 μιη之氧化紹衆液以及於Μ 啊之速率及5分鐘之研磨時間下進行該透明固化層表面的 拋光，最後以純水進行清洗，即可獲得該具體例丨之經表 面處理之回收基板。At present, most of the optoelectronic products on the market (such as LCD TVs, computer screen mobile phone screens, digital camera screens, etc.) will be used in small transparent substrates (such as glass or quartz) and on the transparent base. A plurality of (4) thin film layers (such as electrode layers, dielectric layers, edge layers, anti-wear layers, anti-reflective layers, etc.) having a special function are formed on the material. However, due to the photoelectric production: the requirements for the process quality of each stage are quite strict. Therefore, in the process of filming or subsequent crepe, there may be many waste semi-finished products (women form a substrate with a multi-layer film layer). As a result, the entire process cost increases, and at the same time, environmental pollution is caused. Taking a liquid crystal display as an example, the process can be divided into three stages: the first stage is an electrode pattern forming process, the second stage is a panel assembly process, and the third stage is a module (m〇dule). Process. In the case of an active matrix driven liquid crystal display, the electrode pattern forming process comprises the preparation of a thin film transistor (TFT) and the preparation of a color filter. In the first-stage process, in addition to the elimination of the substrate that does not conform to the specifications, the substrate may be eliminated due to problems such as uneven surface of the substrate or uneven coating. In the second stage of the panel assembly process, the 1305734 can be used because the thin film transistor and the color filter cannot be assembled in pairs, resulting in more discarded panels. In addition, with the current enlargement of the substrate size, it is easier to break or plate the substrate during the transportation process, resulting in more discarded panels. ... Nowadays, most of the recycling of waste substrates is done by means of burying, or by crushing the substrate, and then making it into a red tablet, a pottery system or a decorative building material, but the above treatment methods have not been effective. The use of 'can not reduce the production cost of electricity products. In addition, after the waste substrate is recycled and processed, it must also meet the substrate of each optoelectronic product: standard specifications, especially the surface roughness requirement, 2 must have good penetration rate without affecting the subsequent application. In the case of a thin film transistor substrate, the surface roughness of the substrate generally refers to the average maximum height roughness measured by the cut reference length (0.4) offstandardlength between 0.8 and 8 mm. , its = value ^ 〇 · 1 μπι; another 'for the photovoltaic industry's reticle substrate, is to directly measure the maximum height roughness and minimum height roughness of the surface of the entire quartz reticle substrate' The height roughness is subtracted from the minimum height roughness to obtain the value of the surface roughness (4), and this value is called. Therefore, how to effectively recycle the waste substrate generated by the waste substrate generated by the photovoltaic product w and to comply with the standard specifications of the substrate can be reinvested in the photovoltaic production process to reduce the manufacturing cost of the photovoltaic product. At present, there is still a great demand in the industry. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a surface treatment method for recovering a substrate which can be used for recycling and recycling a waste substrate, and having a simple and inexpensive processing step. Another object of the present invention is to provide a transparent substrate which is suitable for use in the photovoltaic industry and which is produced by the above method. The surface treatment method of the present invention for recycling a substrate is to surface-treat a recycled substrate having a transparent underlayer and at least one functional layer on the underlayer and partially or completely covering the underlayer, the method comprising: * Use roughing (laPPing), sand-blasting method, plasma method, dry etching meth〇d or chemical wet etching meth〇d 'Removing the functional layer of the recycled substrate such that the transparent underlayer of the recovered substrate has a rough surface; forming a coating on the rough surface of the transparent underlayer; and curing the coating to form a penetration The rate is 8. Above 100% and having a surface: a transparent cured layer of a surface roughness of S 80 μm. The transparent substrate of the present invention comprises a transparent surface roughness layer having a transmittance of 8% or more and having a rough surface and covering a rough surface of the transparent surface roughness layer and having a transmittance of 80% or more. Transparent cured layer. The transparent cured layer is made of a material and has a surface roughness of $80 μηι. Conventional substrate surface treatment methods are mostly carried out only by rough polishing and fine polishing (P(10)lng). If the substrate is recycled in this way (4), the substrate has a multi-layer functional layer, so it takes longer. After the time is rough, the functional layer can be removed, and it is necessary to = the roughness of the bottom surface of the recycled substrate is reduced to the acceptable range of the fine throwing machine of 7,1305734, and the fine throwing step can be directly performed. It is still a lot of man-hours to throw the bottom surface into a standard specification that meets the surface roughness. This will result in an increase in the overall processing time and at the same time an increase in the cost of recycling. Therefore, many photocells currently choose to directly scrap the substrate. : Discard without recycling. However, the surface treatment method for recycling the substrate of the present invention can be directly removed from the bottom layer of the recovery substrate by first removing the functional layer of the recovery substrate without considering the coarse rotation of the bottom surface of the recovery substrate. A coating is formed on the surface, and finally the coating is cured and the transparent cured layer is formed, that is, the surface treatment of the recovered substrate of the present invention is completed. In addition, the transparent solidified layer formed in the method of the present invention is formed by curing a specific composition, so that the transparent cured layer has a transmittance of s〇% or more, so that the optical properties of the subsequent application are not affected at all, and it is favorable for Photovoltaic Wei recycles the scrapped substrate while reducing damage to the environment. [Embodiment] The recovery substrate suitable for use in the method of the present invention has a transparent underlayer having a transmittance of _ or more and at least one functional layer on the underlayer and partially or completely covering the underlayer. The term "recycled substrate" as used herein refers to any substrate that has been eliminated in any of the process steps of the optoelectronic or semiconductor product, preferably the substrate is a recovered thin film transistor substrate, a color slab substrate. Or a reticle substrate. In the specific embodiment of the present invention, the recovery substrate is a thin film transistor substrate; in another embodiment of the present invention, the recovery substrate is a photomask substrate. The transparent underlayer of the recovered substrate can be made of any material known as a substrate. Preferably, the underlayer of the recycled substrate is made of glass or quartz 8 J305734. The functional layer of the recycled substrate may be one or more layers, and includes, for example, an electrode layer, a dielectric layer, a protective layer, an insulating layer, an anti-wear 35, an anti-reflection layer, etc., and the bottom layer is partially or completely covered by the actual (iv) portion. . The surface treatment method for recovering the substrate of the present invention comprises: removing the functional layer μ of the recovered substrate by using a rough polishing method, an electric method, a dry method, or a chemical wet method, so that the substrate is The bottom layer has a rough surface; a coating layer is formed on the rough surface of the bottom layer; and the coating layer is cured to form a pattern of 0Λ0/, and has a radiance of 80% or more and a surface roughness. A transparent cured layer of the surface of $80 μιη. “曰“Surface Thickness”—The word is measured and defined according to the use of the recycled substrate used. When the recycled substrate used is subsequently used as a thin film transistor substrate, the surface of the surface of the transparent cured layer formed is formed. The roughness is defined by the average maximum height roughness measured by the interception reference length between 〇·8 _ and 8 _ at a length of 200 mm, and the subsequent use of the recycled substrate is intended to be In the case of the mask substrate, the surface roughness of the surface of the transparent cured layer formed is a direct measurement of the maximum roughness and minimum roughness of the surface of the entire quartz photomask substrate, and the maximum south thick chain is obtained. The value of the surface roughness is obtained by subtracting the minimum height and the coarseness. The removal of the functional layer of the substrate can be selected according to the nature of the functional layer. When the recycled substrate is recycled The color filter substrate or the photomask substrate is relatively thin, and the recycled substrate is removed by chemical etching to remove the functional layer. When the recycled substrate is a recovered thin film transistor substrate Preferably, the recycled substrate is removed by a rough polishing method. The functional layer is removed, and the rough surface formed on the bottom layer after removing the functional layer has a surface roughness greater than 0.1 μm. The coating is composed of a composition. The composition constituting the coating is selected from any material which is curable, has a transmittance after curing of 80% or more, and has preferable heat resistance and chemical resistance. Preferably, The composition contains a filler and a solvent. The composition used in the specific example of the present invention is similar to the reagent component of the product name sf_P5〇l〇 manufactured by T〇ray Co., Ltd. of Japan but does not contain a developer. The material, which has good chemical resistance to the solvent such as isopropanol, propylene, xylene, N-methylpyrrolidone, and indium tin oxide etchant after curing, and is 230 The penetration rate of 98% can still be maintained at a heating temperature above °C. The filler is selected from the group consisting of: acrylic resin resm), epoxy resin (ep〇xy resin), and iron montron (Tefi) 〇n), polysiloxane or a combination of these. In a specific example of the present invention, the filler material is a polyoxyl system, and the polyoxyl system contained in the material of the product of SF refers to 1Q manufactured by the company. Preferably, the solvent is selected from the group consisting of diacetone alc〇h〇l, γ-butyrolactone (Y-bUtyr〇lact〇ne), diethylene glycol dimethyl (10), propylene glycol A. Base I B 曰 (propylene giyC〇1 methyl can be (10) gamma, pgmEA) or a combination of these. In one embodiment of the invention, the solvent is one of diacetone alcohol and γ-butyrolactone In the composition of the present invention, the ratio of the filler and the solvent can be adjusted 'preferably' to the composition according to actual needs, and the content of the filler 10 1305734 ranges from 2 wt% to Between 35 wt%. In a specific embodiment of the present invention, the content of the material is 35, wt%. The coating may be formed on the rough surface by any conventional method, preferably 'the coating is by spin coating method, spray coating method (spray coating method) ), a dip coating method, a scrap coating method, or a silt coating method is formed on the rough surface. In one embodiment of the invention, the coating is formed by a spin coating method. The coating formed on the rough side of the bottom layer can selectively vary the applied thickness, e.g., above, equal to, or below the maximum width of the coarse facet of the underlayer, as desired. The curing mode of the coating layer may also be carried out according to the coating method or according to a conventional curing method (such as heating or illuminating). Preferably, the coating is cured by heating; more preferably, the heating temperature is Between 〇C and 650 C, and more preferably, the heating temperature is between 350 ° C. • Preferably, the method of the present invention further comprises the step of polishing the transparent cured layer. It is worth mentioning that this polishing step depends on whether the roughness of the surface of the transparent cured layer conforms to the standard specifications of subsequent applications. The roughness of the rough surface of the bottom layer is caused by a plurality of openings facing outward, and the transparent solidified layer can selectively fill or not completely fill the holes. If it is to be used in the TFT process (the surface roughness of the substrate needs to be $〇1 and when the transparent solidified layer fills the holes, the surface thick chain can be 0.1S0.1 μιη or greater than 〇.1 μηι ' The surface roughness is 〇1, then 11 1305734 The surface-treated recycled substrate can directly be used to recognize A « 1 r 1 table private 'right surface rough' degree..., then the surface of the transparent cured layer must be further Polished to make the surface roughness S0.1 μη]. When the surface of the 辇Λ 口 口 疋 疋 疋 疋 疋 , , , , , , 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面Polishing 'to make the surface roughness m called. The method of strictness can also be adjusted according to the actual needs, for example, two times:; the thickness of the crucible does not conform to the subsequent application, the secret of the application of the reverse shape and the transparent solidified layer 'Until the thickness of the substrate conforms to the subsequent addition, the transparent substrate of the present invention comprises a transparent surface rough layer and a transparent cured layer. The transparent cured acoustic thin layer X covers the rough surface of the transparent surface coarse sugar layer and has 80% Above wear. f transparency, and by ~ The material is formed, and the surface of the transparent cured layer has a rough surface roughness _μ1η. Preferably, the material for forming the transparent cured layer is selected from the group consisting of a propylene glycol resin, a cured ring, , a combination of a cured, or a combination of: τ, 嶋, I, 士, 4, in one or both of the present invention, the material is a cured polyoxyalkylene. The rough layer may be preferably made of a transparent bottom sound as described above, the transparent surface (four) layer or quartz. English: Γ =, that is, when the transparent surface rough layer is made by Shiyang Preferably, the transparent curing is 8080 μm. The surface roughness of the surface is in the case of a TFT substrate, and the rough surface layer of the surface is made by the glass, when the car is good, the transparent surface The rough surface of the roughened layer 12 1305734 has a roughness greater than 0.1 μm. And preferably, the surface of the transparent cured layer has a surface roughness of 〇. 1 μπι. The transparent substrate is preferably made by using the above The method for recovering the surface treatment of the substrate is obtained. The details, features, and effects of the present invention will be apparent from the following detailed description of the two specific examples of the reference drawings. Before the present invention is described in detail, it is noted that in the following description, similar The components are denoted by the same reference numerals. [Examples] <Specific Example 1> The recovered substrate is a recovered TFT substrate having a transparent glass bottom 35n having a transmittance of 8 G% or more. And a pattern film 12 on the bottom layer U and covering the bottom layer U. The pattern film is composed of "several functional layers 121. The surface treatment method of the recovery substrate" is first performed by using a rough polishing method. - Grinding machine (manufactured by Korea CMT Co., Ltd.), and using a carbonized (four) liquid having a particle size of 1 G μηη and an iron grinding crucible, and pattern film of the recovered substrate 1 at a rate of 45 rpm and a grinding time of 3 minutes The crucible 2 is removed and washed with pure water to make the recovery: the second bottom layer U has a rough surface 1U. Then, spin-coating was carried out at a rate of 4 rpm and a day of leap seconds using a spin coating (manufactured by TOK Co., Ltd.), and the composition was selected by the Japanese company. Manufactured under the name SF-P5010, which consists of Juxi U 兀 丙 丙 及 及 γ , , , , , , , , , , , , , , , 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 13 The rough surface m of the bottom layer u is laid to form a coating. The recovered substrate 1 is then placed on a hot plate 'and at 300'. (: curing was carried out, and after 3 minutes, the coating was cured to form a transparent cured layer 2. Re-use of a grinder (manufactured by CMT Corporation of Korea) and oxidation with a particle size of 〇3 μm The surface of the transparent solidified layer is polished at a rate of scented liquid and at a polishing time of 5 minutes, and finally washed with pure water to obtain a surface-treated recovered substrate of the specific example.
<具體例2> 參閱圖5，該回收基板丨為經回收之光罩基板，其具有 一穿透率A 80%以上之透明石英底4 i卜以及—位^該底 層11上且部分覆蓋該底層u之功能層12卜該功能層121 為Cr/CrOx圖案層。該回收基板i的表面處理方法是先利用 化學钱刻法’於賣之溫度下，將該回收基板i浸泡於鉻 飾刻液（由溪度15〇/〇之硝酸銨飾⑽4)2Ce(N〇3)6及濃度85% 之硝酸所構成）中並歷時5分鐘，以將該回收練i之功能 層12丨予以移除，並以純水進行清洗以及於11〇。〇溫度下 進行烘乾’使得制收基板i之底層U具有—粗糖面又⑴ 。接著利用一旋轉塗佈機（由SWIENC〇公司所製造，型號 為PM490WX 8〇〇 rpm之速率及2〇秒之時間進行旋轉塗佈 ，將該組成物（由日本T〇ray公司所製造，品名為SF_p5〇i〇 ’是由聚矽氧烷、雙丙酮醇及γ_ 丁内酯所構成，其中聚矽氧 貌於整個組成物巾之含量為35 wt%)塗佈於該底層丨丨的粗 輪面m上’以形成一塗^。然後將此回收基板丄放置於一 14 1305734 加熱板上，奸Λ ^ 並^ 300。〇下進行固化，在歷時30分鐘後，传 该塗層固化& π ^ … 形成一透明固化層2(厚度為15 μιη)，即可被 件該具體你丨？ 又 之經表面處理之回收基板。 [性質測試] 具體彳列1 tt 及2所獲得之經表面處理的回收基板分別選 以下方法進行測試： 2. 粗縫度觀察：利用掃描式電子顯微鏡（由日立公司所製 &，型號為S-44800)進行具體例！之粗拋後之回收基 勺表面形態觀察及該經表面處理之回收基板的表面 形L觀察，其結果分別如圖2及3所示。 相對穿透率測試：相對穿透率是以玻璃基板或石英基 板的穿透率為基準來進行計算而獲得，係利用穿透率 光π儀（由日本Lambda Vision公司所製造，型號為 micro 3000) ’並於35〇 〜7〇〇 波長範圍下分 別象式玻璃基板、石英基板以及具體例丄與2之經表 面處理之回收基板的穿透率，其中，該具體^列1於各 個波長下所獲得之相對穿透率是以玻璃基板的穿透率 為基準。十算而得，其結果如圖4所示。而具體例2於 各個波長下所獲得之相對穿疼率是以石英基板的穿透 率為基準6十算而知，其結果如以下之測試結果所述。 3·底層與該透明固化層之間的黏著度測試：依據標準方 /套JIS K 5400進行該具體例丄之經表面處理之回收基 板的黏者度測試。 【測試結果] 15 1305734 具體例1 : 由圖2可知，具體例丨之回收基板於移除該功能層 後，I玄底層形成一粗糙面，且由圖3可知，該底層之粗糙 面的最大表面粗糙度約為8.4 μηι ,且形成該透明固化層 後之表面相當平整並未有任何凹陷，該表面之表面粗糙度 < 0.06 μιη。 由圖4之穿透率測試結果來看，於35〇 nln〜7〇〇 nm 之波長下，具體例1之經表面處理之回收基板的相對穿透 率皆超過90%，可見具體例i之經表面處理的回收基板 確貫具有不錯之光學性質，可投入後續製程（特別是TFT 製程）。 具體例1之經表面處理之回收基板的黏著度測試結 果顯不並未有剝離分層現象，證明該具體例丨之經表面處 理之回收基板的底層與透明固化層之間的黏著性相當良好 〇 具體例2 : a亥經表面處理之基板的表面粗链度符合一般光罩基 板之平坦度20 μηι之要求，且於紫外線波長範圍下，穿 透率為90%以上，在可見光波長範圍下，穿透率為98.5% 以上。 綜上所述’本發明之回收基板之表面處理方法是藉由 先移除該回收基板之功能層，再塗佈一特定組成物，以於 〆回收基板之底層的粗糙面上形成一塗層’再將該塗層予 以固化而形成一透明固化層，並完成該回收基板之表面處 16 1305734 理本务明方法僅需簡單之步驟，便可讓回收基板可被回 收再利用’且可有效縮短處理時間，並節省回收成本。此 外’本發明之透明基板包含—透明表面粗链層及一覆蓋於 該粗糖層上之透明固化層，且該透明固化層之表面的表面 粗糙度錢，’可適用於作為光電產業之基板。 丄惟以上所述者，僅為本發明之較佳實施例而已，當不 能以此限定本發明實施之範圍，即大凡依本發”請專利 範圍及發明說明内容所作之簡單的等效變化與修飾，皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一流程圖，說明本發明之回收基板之表面處理 方法之一具體例的處理過程； 圖2是一 SEM圖，說明本發明方法之一具體例中之回 收基板於移除該功能層後之表面形態觀察，此sem圖是以 45°斜角俯視進行拍攝； 圖3是一 SEM圖，說明本發明方法之一具體例中之經 表面處理之回收基板的觀察，此SEM圖是以45。斜角俯視 進行拍攝； 圖4是一關係圖，說明本發明方法之一具體例中之經 表面處理之回收基板於350 nm〜700 波長下之穿透率； 及 圖5是一流程圖，說明本發明方法之另一具體例的處 理過程。 17 1305734 【主要元件符號說明】 1…… '…回收基板 121 •功能層 11 •.… …·底層 2 .... •透明固化層 111… …·粗梭面 21··· •透明固化層之表面 12•…. …·圖案膜 18<Specific Example 2> Referring to Fig. 5, the recovered substrate is a recovered photomask substrate having a transparent quartz crystal having a transmittance of 80% or more and a portion of the underlayer 11 partially covered. The functional layer 12 of the bottom layer u is a Cr/CrOx pattern layer. The surface treatment method of the recovery substrate i is to first immerse the recovery substrate i in a chrome engraving solution (by a sulphuric acid sulphuric acid (10) 4) 2Ce (N) at a temperature at a selling temperature. 〇3)6 and a concentration of 85% nitric acid were added for 5 minutes, and the functional layer 12 of the recovery layer was removed, and washed with pure water and at 11 Torr. Drying at a temperature of ’ makes the bottom layer U of the substrate i having a coarse sugar surface (1). Then, using a spin coater (manufactured by SWIENC Corporation, model number PM490WX 8 rpm and spin coating for 2 sec., the composition (manufactured by T. Ray Co., Japan, product name) SF_p5〇i〇' is composed of polyoxyalkylene, diacetone alcohol and γ-butyrolactone, wherein the polyfluorene oxide content is 35 wt% of the entire composition, and the coating is applied to the underlying crucible. On the tread m, a 'coating' is formed. The recycled substrate is then placed on a 14 1305734 hot plate, and the crucible is ^ and ^ 300. The crucible is cured, and after 30 minutes, the coating is cured &; π ^ ... to form a transparent solidified layer 2 (thickness of 15 μηη), which can be used to recover the substrate by the surface treatment. [Property test] The specific column 1 tt and 2 The surface-treated recycled substrate was tested by the following methods: 2. Observed coarseness: A scanning electron microscope (manufactured by Hitachi, Ltd., model: S-44800) was used to carry out the specific example! Morphological observation of the surface of the spoon and the surface-treated recovery The surface shape of the plate was observed, and the results are shown in Figures 2 and 3. The relative transmittance test: the relative transmittance is calculated based on the transmittance of the glass substrate or the quartz substrate, and is obtained by wearing Transmittance Photometer π (manufactured by Lambda Vision, Japan, model number is micro 3000) 'And in the range of 35 〇 to 7 分别, respectively, the image glass substrate, the quartz substrate and the surface treatment of specific examples and 2 The transmittance of the substrate is recovered, wherein the relative transmittance obtained by the specific column 1 at each wavelength is based on the transmittance of the glass substrate. The result is shown in Fig. 4. The relative wear rate obtained in the specific example 2 at each wavelength is known as the transmittance of the quartz substrate, and the results are as described in the following test results. 3. Between the bottom layer and the transparent cured layer Adhesion test: The viscosity test of the surface-treated recycled substrate of this specific example was carried out according to the standard side/set of JIS K 5400. [Test Results] 15 1305734 Specific Example 1: As can be seen from Fig. 2, a specific example Recycling the substrate to remove the work After the energy layer, the I base layer forms a rough surface, and as shown in FIG. 3, the maximum surface roughness of the rough surface of the bottom layer is about 8.4 μηι, and the surface after the transparent solidified layer is formed is relatively flat without any depression. The surface roughness of the surface is < 0.06 μηη. From the results of the transmittance test of Fig. 4, the relative penetration of the surface-treated recovered substrate of the specific example 1 at a wavelength of 35 〇 nln to 7 〇〇 nm The rate is over 90%. It can be seen that the surface-treated recycled substrate of the specific example i has good optical properties and can be put into subsequent processes (especially TFT processes). The adhesion test results of the surface-treated recycled substrate of the specific example 1 showed no peeling delamination, which proved that the adhesion between the bottom layer of the surface-treated recycled substrate and the transparent cured layer of the specific example was quite good. 〇 Specific Example 2: The surface roughness of the substrate treated with a surface is in accordance with the flatness of the general mask substrate of 20 μηι, and the transmittance is 90% or more in the ultraviolet wavelength range, in the visible wavelength range. The penetration rate is 98.5% or more. In summary, the surface treatment method of the recycled substrate of the present invention is to form a coating on the rough surface of the bottom layer of the ruthenium recovery substrate by first removing the functional layer of the recovery substrate and then coating a specific composition. 'The coating is then cured to form a transparent cured layer, and the surface of the recovered substrate is completed. 16 1305734 The method of the present invention requires only a simple step to allow the recovered substrate to be recycled and reused. Reduce processing time and save on recycling costs. Further, the transparent substrate of the present invention comprises a transparent surface thick chain layer and a transparent cured layer covering the coarse sugar layer, and the surface roughness of the surface of the transparent cured layer is suitable for use as a substrate for the photovoltaic industry. The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent change of the patent scope and the description of the invention according to the present invention is The modification is still within the scope of the present invention. [Description of Schematic] FIG. 1 is a flow chart illustrating the process of a specific example of the surface treatment method for recycling a substrate of the present invention; FIG. 2 is an SEM image. The surface morphology of the recovered substrate in the specific example of the method of the present invention after removing the functional layer is illustrated. The sem diagram is taken at a 45° oblique angle. FIG. 3 is an SEM image illustrating the method of the present invention. In the case of the surface-treated recovered substrate in a specific example, the SEM image is taken at a 45-angle oblique view; FIG. 4 is a diagram illustrating the surface-treated recycled substrate in one embodiment of the method of the present invention. The transmittance at a wavelength of 350 nm to 700; and Fig. 5 is a flow chart illustrating the processing of another specific example of the method of the present invention. 17 1305734 [Description of main component symbols] 1... '...back Function layer substrate 121 • 11 •. ... ... · 2 .... • transparent cured bottom layer 111 ... ... · 21 ··· • transparent cured surface layer of rough surface of the shuttle 12 • .... ... · pattern film 18