201201314 六、發明說明： 【發明所屬之技術領域】 本發明侧於-種晶圓傳战置、位置感_統與其視覺檢 測系統，並且特別地，本發明關於一種晶圓傳送裝置，其能夠在 -晶圓之檢測_穩定地傳送該晶圓，由此提高總厚度變化測量 " 之可靠性，以及一位置感測系統與其視覺檢測系統。 【先前技術】 太陽能電池係為-種制_半導體之性能，將光能轉化為電 月匕之裝置。太陽能電池具有一 PN接面結構，該pN接面結構中— 陽極（P)型半導體與-陰極㈤型半導體相接合。#太陽光入 射於太陽能電池之上時，制及電子糊人射之太陽光之能量產 生於這些半導體之中。同時，透過在PN接面產生的一電場，電洞 (+ )移動JLP型半導體—侧且電子（_)移動至N型半導體一 側’並且具有產生電勢用以產生電能之結果。 太陽能電池可分類為—細型太陽能電池或U型太陽能 電池。 薄膜型太陽能電池透過在—紐，例如玻璃上職—薄膜半 導體製造°晶圓型太陽能電池透過使用半導體材料，例如石夕，作 為一晶圓製造。 薄膜型太陽能電池或晶圓型太陽能電池透過在一玻璃、透明 塑料或石夕曰曰圓（下文中，一//玻璃、透明塑料或石夕晶圓，/將共同 3 201201314 稱作一"晶圓〃）之上形成一用做PN接面之半導體層，以及形成 與半導體層電連接之一陽（+ )極及一陰（一）極製造。 而且，在晶圓型太陽能電池之中，更執行一在其一太陽光入 射表面上形成一抗反射層之製程，用以防止太陽光自一 pN接面層 發射，以使得太陽光能夠通過PN界面層傳送。 半導體層、電極層以及抗反射層使用沉積設備或喷鍍設備（下 文中，共同稱作處理設備）形成。 在一晶圓之處理過程之前或之後，可執行一晶圓上的殘留污 染物，或晶圓之缺陷，例如裂紋之檢測過程。 特別地，為了節省成本，用以製造一太陽能電池之晶圓之厚 度越來越減少。結果，在太陽能電池之製造期間，晶圓損傷之可 能性增加。 如果雖然在-太陽能電池製造姻晶圓損傷，但似有檢測 晶圓缺陷的此晶圓執行-過程，㈣出現於晶誠污染物保留於 晶圓之表面上，在-隨後製程之後，有缺陷的晶圓需要處理，這 需要很多的成本。也就是說’關於此需要處理之晶圓執行一不必 要的製程。結果，材料被浪費且製程複雜，產生太陽能電池之製 造效率降低且浪費成本之問題。 而且’除了檢測晶圓上的殘留污染物之過程或檢測晶圓的裂 紋之過程之外，可執行一檢測晶圓的總厚度變化（或扭轉）之^ 程。 ^ 4 201201314 因此，在一太陽能電池之製造期間，檢測一晶圓之質 重要。如果污雜保·晶圓之表面上，歡存在於純，或者 晶圓之總厚度變化不均勻，則雖然關於晶圓執行隨後的奸一 1品可不表現紐良之性能。因此，較佳地，在執行隨雜程 之别檢測晶圓且如果確定晶圓具有缺陷處理此晶圓。 在待檢測之晶圓維持平坦的條件下，執行晶圓之總厚度變化 之檢測過程。 又 然而，晶圓之厚度越來越薄。在晶圓之厚度測量期間，由於 重力或者由於傳送晶圓的傳送帶之下垂，可不保證晶圓之平坦狀 態。 一 如果待檢測之晶圓之平坦狀態不能夠保證，則總厚度變化測 量之可靠性降低’這樣可導致太陽能電池之生縣降低且浪費成 〇 而且，在使用自動设備傳送晶圓之期間，執行晶圓之檢測製 程。 由於晶圓變得非常薄，如果透過一自動傳送裝置在高速下傳 送的a曰圓’又有穩疋支撲’則出現晶圓之滑動，產生可損傷晶圓之 結果。而且，在晶圓之傳送期間出現的故障可降低檢測過程之效 率。 【發明内容】 因此’鑒於上述問題’本發明之目的在於提供一種晶圓傳送 201201314 裝置、位置感測系統與其視覺檢測系統，藉以消除由於習知技術 之限制及缺陷所產生之一個或多個問題。 本發明其他的優點、目的和特徵將在如下的說明書中部分地 加以闡述’並且本發明其他的優點、目的和特徵堂懷本領域的普 通技術人員來說，可以透過本發明如下的說明得以部分地理解或 者可以從本發明的實射得t本發明的目的和其他優點可以透 過本發明所記載的書和申請專·财特職_結構並結 合圖式部份，得以實現和獲得。 為了獲得本發_這些目的與其他特徵，現對本發明作具體 化和概括性的描述’-種晶圓傳送裝置包含有—傳送帶，其在一 晶圓放置於此傳送帶之上的狀態下，用以傳送晶圓，一對帶輪， 用以驅動傳送帶，以及—吸附塊，其提供於傳送帶之—内部:間 中，用以將吸附力提供於傳送帶之此内部空間。 傳送帶可水平地制，叹_塊可將 之内表面之_。 &供至傳送帶 而且，傳送帶包含有-第-傳送帶及—第二傳送帶，以 附塊包含有-第-吸附塊及一第二吸附塊，第一吸附塊及 吸附塊分別提供於第-傳送帶之—内部空間及第第— 用以同 第-傳运帶及第二傳送帶透過同—驅動馬達驅動。 此種情況下，此種·傳送裝置更包含有一驅動轴 6 201201314 時驅動第一傳送帶及第二傳送帶之帶輪。 第-傳送帶與第二傳送帶之間的距離，在與晶圓之一傳送方 向相垂直的方向上相比較於晶圓之寬度更小。 而且’吸附塊可為-長桿形且可在傳送帶之一縱向之上排列 於傳送帶之内部空間之中。 吸附塊可具有之一頂部寬度相比較於傳送帶之寬度更大。 此種情況下，吸附塊可具有—長度，此長度在晶圓之一傳送 方向上相比較於晶圓之一寬度之兩倍相等或更大。 而且，吸附塊可在其-頂表面之一預定區域上提供有以一預 定間隔排列的複數個吸附孔。 提供於吸附塊之絲面的至少—個吸附孔之剖面可為一擴圓 或一長孔剖面之形狀。 此種情況下，係為橢圓或一長孔剖面形狀的至少一個吸附孔 提供於與傳送帶之一縱向相垂直的方向。 此預定區域具有之一長度相比較於晶圓之一傳送方向上，晶 圓之一寬度之兩倍相等或更大。 而且，此種晶圓傳送裝置可更包含有定義於吸附塊之中的至 J一個主流通道，至少一個吸附部份，吸附力通過至少一個吸附 部份作用至至少—個主流通道，以及複數個支流通道，至少一個 主流通道通過這些支流通道與吸附孔相聯繫。 此種情況下，至少一個主流通道可排列於水平方向上，以及 201201314 支"’u通道在支;4通道餘彡—個域通道彳目鴨雜態下，可在 一垂直方向上排列。 支流通道之數目可與吸附孔之數目相同。 至少-個主流通道可包含有複數個主流通道，以及這些主流 通道可在吸附塊之一縱向上排列成一行。 此種It况下’吸附塊具有—與每—帶輪之—頂端高度相對應 之頂部南度。 在本發明之另一方面中，一種位置感測系統包含有複數個傳 其在-晶圓放置於傳送帶上之狀態下，用以傳送晶圓，一 對帶輪，用以驅動傳送帶’―吸附塊，其提供於每-傳送帶之一 内部空間之中，用以將吸附力提供至每一傳送帶之内表面；以, 一雷射感·，其提供於這些傳送帶之間或外部提供的至少― 檢測位置之上與/或之下，用以將雷射光線照射至透過傳送糾 送之晶圓之頂表面或底表面，以及感測自晶圓之頂表面或底知 反射出之雷射光’用以測量晶圓之頂表面或底表面之—相對位置 此種情況下，傳送帶可包含有一第一傳送帶及一第二傳送 =，以及吸附塊可包含有—第—吸附塊及—第二吸附塊，其分別 提供於第-傳送帶之—内部空間及第二傳送帶之—内部空間之 t ° 工日 而且’至少-個檢測位置可包含有，位於第—傳 傳送帶之間’第―傳送帶之外部及第二傳送帶之外部的第i、至^201201314 VI. Description of the Invention: [Technical Field] The present invention relates to a wafer transfer, a sense of position, and a visual inspection system thereof, and in particular, the present invention relates to a wafer transfer apparatus capable of - Wafer detection _ stable transfer of the wafer, thereby improving the reliability of the total thickness variation measurement, and a position sensing system and its visual inspection system. [Prior Art] A solar cell is a device that converts light energy into a power cell. The solar cell has a PN junction structure in which an anode (P) type semiconductor is bonded to a - cathode (five) type semiconductor. #Sunlight is incident on a solar cell, and the energy of the solar light emitted by the electronic paste is generated by these semiconductors. At the same time, through an electric field generated at the PN junction, the hole (+) moves the JLP-type semiconductor side and the electron (_) moves to the N-type semiconductor side and has a result of generating an electric potential for generating electric energy. Solar cells can be classified as either fine solar cells or U-shaped solar cells. Thin film type solar cells are manufactured by using a semiconductor wafer material, such as Shi Xi, as a wafer. A thin film type solar cell or a wafer type solar cell is passed through a glass, a transparent plastic or a sapphire circle (hereinafter, a glass/transparent plastic or a stone wafer, or a common 3 201201314 is called a " A semiconductor layer used as a PN junction is formed over the wafer, and a male (+) pole and a cathode (one) are electrically connected to the semiconductor layer. Moreover, in the wafer type solar cell, a process of forming an anti-reflection layer on a solar incident surface thereof is further performed to prevent sunlight from being emitted from a pN junction layer so that sunlight can pass through the PN. Interface layer transfer. The semiconductor layer, the electrode layer, and the anti-reflection layer are formed using a deposition apparatus or a sputtering apparatus (hereinafter collectively referred to as a processing apparatus). Residual contaminants on a wafer, or wafer defects, such as crack detection processes, can be performed before or after a wafer process. In particular, in order to save costs, the thickness of wafers used to fabricate a solar cell is decreasing. As a result, the possibility of wafer damage increases during the manufacture of solar cells. If the wafer is damaged in the solar cell manufacturing process, it seems to have the wafer execution process for detecting wafer defects, and (4) the crystal contaminant remains on the surface of the wafer, after the subsequent process, there is a defect. The wafer needs to be processed, which requires a lot of cost. That is to say, an unnecessary process is performed on the wafer to be processed. As a result, materials are wasted and the process is complicated, resulting in a problem that the manufacturing efficiency of the solar cell is lowered and the cost is wasted. Moreover, in addition to the process of detecting residual contaminants on the wafer or the process of detecting cracks in the wafer, a process of detecting the total thickness variation (or twist) of the wafer can be performed. ^ 4 201201314 Therefore, it is important to detect the quality of a wafer during the manufacture of a solar cell. If the surface of the wafer is on the surface of the wafer, the brightness is not pure, or the total thickness of the wafer is unevenly changed, although the subsequent performance of the wafer is not indicative of the performance of New Zealand. Therefore, preferably, the wafer is detected while performing the process of detecting the wafer and if the wafer is defective. The detection process of the total thickness variation of the wafer is performed under the condition that the wafer to be inspected is maintained flat. However, the thickness of the wafer is getting thinner and thinner. During the thickness measurement of the wafer, the flat state of the wafer may not be guaranteed due to gravity or due to the drooping of the conveyor belt. If the flat state of the wafer to be inspected is not guaranteed, the reliability of the total thickness variation measurement is reduced. This may result in a reduction in the solar cell's living area and waste of waste. Moreover, during the transfer of the wafer using the automated device, Perform a wafer inspection process. Since the wafer becomes very thin, if the a circle that is transported at a high speed through an automatic transfer device has a stable roll, the sliding of the wafer occurs, resulting in damage to the wafer. Moreover, failures that occur during wafer transfer can reduce the efficiency of the inspection process. SUMMARY OF THE INVENTION Therefore, in view of the above problems, an object of the present invention is to provide a wafer transfer 201201314 device, a position sensing system and a visual inspection system thereof, thereby eliminating one or more problems due to limitations and defects of the prior art. . Other advantages, objects, and features of the invention will be set forth in part in the description which follows. <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; The object and other advantages of the present invention can be realized and obtained by the present invention and the application of the invention. In order to obtain the present invention and other features, the present invention is embodied and described in general terms. The wafer transfer apparatus includes a conveyor belt in a state in which a wafer is placed on the conveyor belt. The transfer wafer, a pair of pulleys for driving the conveyor belt, and the adsorption block are provided in the inner-to-center of the conveyor belt for providing the adsorption force to the inner space of the conveyor belt. The conveyor belt can be made horizontally, and the slap can block the inner surface. And the conveyor belt and the conveyor belt include a - conveyor belt and a second conveyor belt, the attachment block includes a - adsorption block and a second adsorption block, the first adsorption block and the adsorption block are respectively provided on the first conveyor The internal space and the first one are used to drive through the same drive motor as the first transport belt and the second conveyor belt. In this case, the transport apparatus further includes a pulley that drives the first conveyor belt and the second conveyor belt when the drive shaft 6 201201314. The distance between the first conveyor belt and the second conveyor belt is smaller than the width of the wafer in a direction perpendicular to the direction in which one of the wafers is conveyed. Further, the adsorption block may be a long rod shape and may be arranged in the inner space of the conveyor belt in the longitudinal direction of one of the conveyor belts. The sorbent block can have a top width that is greater than the width of the conveyor belt. In this case, the adsorption block may have a length which is equal to or greater than twice the width of one of the wafers in one of the wafer transfer directions. Moreover, the adsorption block may be provided with a plurality of adsorption holes arranged at a predetermined interval on a predetermined area of one of the top surfaces. The cross section of at least one of the adsorption holes provided on the surface of the adsorption block may be in the shape of a rounded or a long hole. In this case, at least one of the adsorption holes which are in the shape of an ellipse or a long hole is provided in a direction perpendicular to the longitudinal direction of one of the conveyor belts. The predetermined area has a length equal to or greater than twice the width of one of the wafers in one of the wafer transfer directions. Moreover, the wafer transfer apparatus may further include a main flow channel defined in the adsorption block to at least one adsorption portion, and the adsorption force acts on at least one main flow channel through at least one adsorption portion, and a plurality of A branch channel through which at least one main channel is associated with the adsorption aperture. In this case, at least one of the main channels can be arranged in the horizontal direction, and the 201201314 branch is in the branch; the 4-channel ember-domain channel can be arranged in a vertical direction. The number of branch channels can be the same as the number of adsorption holes. At least one of the main channels may include a plurality of main channels, and the main channels may be arranged in a line in the longitudinal direction of one of the adsorption blocks. In this case, the adsorption block has a top southness corresponding to the height of the tip of each pulley. In another aspect of the invention, a position sensing system includes a plurality of transmissions in a state in which a wafer is placed on a conveyor belt for transporting a wafer, and a pair of pulleys for driving the conveyor belt--adsorption a block provided in an inner space of each of the conveyor belts for providing an absorbing force to an inner surface of each of the conveyor belts; a sense of sensation provided at least between the conveyor belts or externally provided Above and/or below the detection position for illuminating the laser beam to the top or bottom surface of the wafer through which the rectification is transmitted, and sensing the laser light reflected from the top surface or bottom of the wafer. For measuring the relative position of the top or bottom surface of the wafer, in this case, the conveyor belt may include a first conveyor belt and a second conveyor =, and the adsorption block may include a - adsorption block and a second adsorption Blocks, which are respectively provided in the inner space of the first conveyor belt and the inner space of the second conveyor belt, and the at least one detection position may be included, which is located outside the first conveyor belt between the first conveyor belts Outside of the second conveyor belt i, and ^
S 201201314 一k測位置’第-至第二檢測位置在其縱向上放置於第一傳送帶 與第二傳送帶之一平分線之上。 此雷射感㈣可包含有—頂雷射感·及—底雷射感測器， 其分別位於第一至第三檢測位置之上及之下。 此種情況下，第—傳送帶與第二傳送帶透過同—驅動馬達驅 動以及此位置感測系統可更包含有複數個驅動軸，用以同時驅 動第傳送τ之帶輪及第二傳送帶之帶輪，以及一驅動馬達，用 以同時驅動這些驅動軸。 而且’吸附塊可配設為-長桿形狀且可在傳送帶之對應一個 之-縱向上，排列於傳送帶之對應—個之内部空間之中，以及形 成有複數個吸附孔的吸附塊之—預定區域具有—長度，此長度相 比較於晶圓之-傳送方向上晶圓之—寬度之兩倍相等或更大。 而且’至少-個檢耻置可放置於第—吸附塊之—預定區域 與第一吸附塊之一預定區域之一平分線上。 此種情況下，傳送帶之數目可為N，以及至少—個檢測位置 可包含有至少N+1個檢測檢測位置。 而且’此吸附塊在其-頂表面之—默區域上提供有以預定 間隔排列的複數個吸附孔。 在本發明之再一方面中，一種視覺檢測系統包含有：一傳送 在-晶圓放置於傳送帶上之狀態下，用以傳送晶圓，一對帶 輪，用以驅動傳送帶，一吸附塊，其位於傳送帶之一内部空間之 201201314 、中，用以將_力提供至傳送帶之—喊面，—絲，提供於傳 达帶之上或之下，用以將光線照射至透過傳送帶傳送之晶圓之一 頂表面或-底表面，以及-捕獲裝置，其提供於傳送帶之上或之 下，用以觀自統照射出及自晶圓反射出之光線。 可以理解的疋’如上所述的本發明之概括說明和隨後所述的 本發明之詳細制均是具有代紐和解雜的酬，並且是為了 進一步揭示本發明之申請專利範圍。 【實施方式】 以下’將結合圖式部份對本發明的較佳實施例作詳細說明。 以下實施例之詳細制包含具體細節扣提供對本發明之徹底理 解且將本剌之概念充分提供於本領域之顺人貝。其中在這些 圖式部份中所使__的參考標號代表相同或同類部件。— 第1圖」係為-太陽能電池晶圓檢測製程之概細。此太 陽能電池晶圓檢測製程可包含有—視覺檢測過程，其透過至少一 個視覺檢測單元執行，肋檢測—太陽能電池關之表面上的殘 留污染物或晶圓之表面的裂紋。 請參閱「第1圖」，-視覺檢測單元500可包含有三個視覺檢 測單元…第—視覺檢測單元綱提供為檢測晶圓之頂表面上的 殘留㈣物。-第二視覺檢測單元200提供為檢測晶圓之底表面 上的殘留污祕。-第三視覺檢測單元勤提供為檢測晶圓之表 面之裂紋。 201201314 各視覺檢測單元可包含有用以傳送一晶圓的傳送帶n〇、21〇 以及31〇 ’第一光源13〇、第二光源23〇以及第三光源33〇，其用 以將用於檢測之光線照射於晶圓，以及第一至第三掃描攝影機 120、220以及320 ’其用以捕獲自光源第一至第三光源13〇、230 以及330照射出光線之反射光分量或一透射光分量。 第一至第三掃描攝影機12〇、22〇以及32〇可為線掃描攝影機 用以掃描一晶圓之表面形成的預定行線。 第一視覺檢測單元1〇〇根據自第一光源13〇照射出，自晶圓 之頂表面反射出且透過第一掃描攝影機12〇捕獲之光線資訊，可 檢測晶圓之頂表面之污染物或缺陷。 同樣地’第二視覺檢測單元2〇〇根據自第二光源230照射出， 自晶圓之底表面反射出且透過第二掃描攝影機220捕獲之光線資 訊’可檢測晶圓之底表面之污染物或缺陷。 第一視覺檢測單元100之第一光源130與第二視覺檢測單元 200之第二光源230可使用可見光作為檢測光線。 因此，在第一視覺檢測單元1〇〇及第二視覺檢測單元200之 中’需要安裝第一及第二光源130及230以及第一及第二掃描攝 影機120及220’以使得自第一及第二光源丨3〇及230入射於晶圓 上的光線之角度大約與自晶圓反射之光線角度相等。第一視覺檢 測單元100及第二視覺檢測單元2〇〇之排列順序可以改變。 第一視覺檢測單元100及第二視覺檢測單元200可依次排列 201201314 且可具有獨立之傳送帶。 此外’如「第1圖」所示，第三視覺檢測單元300可提供於 第一視覺檢測單元1〇〇及第二視覺檢測單元200之後部。 與第一視覺檢測單元100及第二視覺檢測單元200不相同， 第三視覺檢測單元300可提供為用以檢測晶圓之裂紋。 因此’組成第三視覺檢測單元3〇〇的第三光源330及第三掃 描攝影機320在待檢測之晶圓位於第三光源33〇與第三掃描攝影 機320之間的狀態下安裝，以使得自第三光源33〇照射出之光線 穿透晶圓且透過第三掃描攝影機32〇捕獲，以檢測晶圓之裂紋。 也就是說，通過存在裂紋的晶圓之區域之光線捕獲之影像與 通過不存在裂紋的晶圓之區域之光線的捕獲影像不相同。用以檢 測裂紋的第三視覺檢測單元300的第三光源33〇可使用具有足以 穿透矽製造之晶圓的長波長之光線作為檢測光線。舉例而言，第 d見覺檢測單兀300的第三光源330可使用近紅外光波長之光線 作為檢測光線。 當完成裂紋之檢測時’根據本發明之位置感測系統誦感測 晶圓之頂表面或底表面之相對位置。這裡，晶圓之頂表面或底表 面之相對位置表示晶圓之頂表面或絲面之垂直位置㈣晶圓之 頂表面或絲面之水倾置。也就是說，可❹濟_之晶圓之 頂表面或絲面之相對位置（高度），用以測量晶圓之總厚度變化 (T〇talThickness Variation，TTV)。曰曰曰圓之頂表面或底表面之高度 12 201201314 可透過具有一雷射感測器之位置感測系統感測。 第2 (a)圖」至「第2 (c)圖」係為根據本發明之晶圓傳 送裝置，以及具有本發明之晶圓傳送裝置之一位置感測系統1〇〇〇 之幾個實施例之平面圖。 根據本發明之位置感測系統1000可包含有複數個傳送帶 1100 ’傳送帶在其上放置有晶圓之狀態下傳送一晶圓，一對帶輪 1400，其用以驅動每一傳送帶11〇〇，一吸附塊15〇〇，其提供於每 一傳送帶1100之内部空間，用以向每一傳送帶11〇〇之内表面提 供吸附力，第一至第三檢測位置16〇〇a、16〇〇b、16〇〜的至少一 個’其提供於傳送帶_之間或外部’以及一雷射感測器测aS 201201314 A k-measurement position 'the first to second detection positions are placed in the longitudinal direction thereof above the bisector of one of the first conveyor belt and the second conveyor belt. The laser sensation (4) may include a top-of-the-line sensation and a bottom laser sensor located above and below the first to third detection positions, respectively. In this case, the first conveyor belt and the second conveyor belt are driven by the same-drive motor, and the position sensing system can further include a plurality of drive shafts for simultaneously driving the pulleys of the first transmission τ and the second conveyor belt. And a drive motor for driving the drive shafts simultaneously. Moreover, the 'adsorption block can be configured as a long rod shape and can be arranged in a corresponding one-longitudinal direction of the conveyor belt, arranged in a corresponding inner space of the conveyor belt, and an adsorption block formed with a plurality of adsorption holes - predetermined The area has a length which is equal to or greater than twice the width of the wafer in the transfer direction of the wafer. Further, at least one of the smear-preparing portions may be placed on the first adsorption block, and the predetermined area is bisected with one of the predetermined areas of the first adsorption block. In this case, the number of conveyor belts may be N, and at least one of the detection positions may include at least N+1 detection detection positions. Further, the adsorbing block is provided with a plurality of adsorption holes arranged at predetermined intervals on the silent region of the top surface thereof. In a further aspect of the present invention, a visual inspection system includes: a transport-on-wafer placed on a conveyor belt for transporting a wafer, a pair of pulleys for driving a conveyor belt, an adsorption block, It is located in 201201314, one of the inner spaces of the conveyor belt, for providing the _ force to the conveyor belt, the shouting surface, the silk, which is provided above or below the communication belt for illuminating the light transmitted through the conveyor belt. A top or bottom surface of the circle, and a capture device that is provided above or below the conveyor belt for viewing and reflecting light from the wafer. It is to be understood that the general description of the invention as set forth above and the detailed description of the invention as described hereinafter are intended to be inclusive of the present invention and are intended to further disclose the scope of the invention. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described in detail in conjunction with the drawings. The details of the following examples are included in the detailed description of the invention. The reference numerals of __ in these drawings represent the same or similar components. — Figure 1 is a summary of the solar cell wafer inspection process. The solar cell wafer inspection process can include a visual inspection process performed by at least one of the visual inspection units, the rib detection—residual contaminants on the surface of the solar cell or cracks on the surface of the wafer. Referring to Fig. 1, the visual inspection unit 500 can include three visual inspection units. The first visual inspection unit is provided to detect residual (four) objects on the top surface of the wafer. - The second visual inspection unit 200 is provided to detect residual contamination on the bottom surface of the wafer. - A third visual inspection unit is provided to detect cracks in the surface of the wafer. 201201314 Each visual inspection unit may include a conveyor belt n〇, 21〇 and 31〇' for transmitting a wafer, a first light source 13〇, a second light source 23〇, and a third light source 33〇 for detecting Light is incident on the wafer, and the first to third scanning cameras 120, 220, and 320' are configured to capture reflected light components or a transmitted light component of the light emitted from the first to third light sources 13A, 230, and 330 of the light source. . The first to third scanning cameras 12A, 22A, and 32A may be predetermined line lines formed by a line scan camera for scanning the surface of a wafer. The first visual detecting unit 1 检测 can detect the pollutants on the top surface of the wafer according to the light information reflected from the top surface of the wafer and reflected from the top surface of the wafer and transmitted through the first scanning camera 12 defect. Similarly, the second visual detecting unit 2 detects the contaminant of the bottom surface of the wafer according to the light information reflected from the bottom surface of the wafer and captured by the second scanning camera 220. Or a defect. The first light source 130 of the first visual detecting unit 100 and the second light source 230 of the second visual detecting unit 200 may use visible light as the detecting light. Therefore, in the first visual detecting unit 1 and the second visual detecting unit 200, the first and second light sources 130 and 230 and the first and second scanning cameras 120 and 220' need to be installed to enable the first and second scanning cameras 120 and 220' The angle of the light incident on the wafer by the second source 丨3〇 and 230 is approximately equal to the angle of the light reflected from the wafer. The order in which the first visual detecting unit 100 and the second visual detecting unit 2 are arranged may be changed. The first visual detecting unit 100 and the second visual detecting unit 200 may sequentially arrange 201201314 and may have independent conveyor belts. Further, as shown in Fig. 1, the third visual detecting unit 300 can be provided at the rear of the first visual detecting unit 1 and the second visual detecting unit 200. Unlike the first visual detecting unit 100 and the second visual detecting unit 200, the third visual detecting unit 300 may be provided to detect cracks in the wafer. Therefore, the third light source 330 and the third scan camera 320 constituting the third visual detecting unit 3 are mounted in a state where the wafer to be detected is located between the third light source 33 〇 and the third scanning camera 320, so that The light emitted by the third light source 33 穿透 penetrates the wafer and is captured by the third scanning camera 32 以 to detect cracks in the wafer. That is, the image captured by the light passing through the region of the cracked wafer is different from the captured image of the light passing through the region of the wafer where the crack is not present. The third light source 33 of the third visual detecting unit 300 for detecting cracks may use light having a long wavelength sufficient to penetrate the wafer manufactured by the crucible as the detecting light. For example, the third light source 330 of the d-th sense detection unit 300 can use the light of the near-infrared light wavelength as the detection light. When the detection of the crack is completed, the position sensing system according to the present invention senses the relative position of the top or bottom surface of the wafer. Here, the relative position of the top surface or the bottom surface of the wafer indicates the vertical position of the top surface or the surface of the wafer (4) the top surface of the wafer or the water surface of the surface of the wafer. That is to say, the relative position (height) of the top surface or the surface of the wafer can be used to measure the total thickness variation (TTV) of the wafer. The height of the top or bottom surface of the dome 12 201201314 can be sensed by a position sensing system with a laser sensor. 2(a) to 2(c) are the wafer transfer apparatus according to the present invention, and several implementations of the position sensing system 1 of the wafer transfer apparatus of the present invention A plan view of the example. The position sensing system 1000 according to the present invention may include a plurality of conveyor belts 1100'. The conveyor belt conveys a wafer with a wafer placed thereon, and a pair of pulleys 1400 for driving each conveyor belt 11' An adsorption block 15〇〇 is provided in the inner space of each conveyor belt 1100 for providing an adsorption force to the inner surface of each conveyor belt 11〇〇, first to third detection positions 16〇〇a, 16〇〇b At least one of 16〇~ is provided between the conveyor belts _ or externally and a laser sensor measures a
第二檢測位置16GGa、1鳴、16GGe之上與/或之下，用以將雷 射光照射於透稱送帶丨刚傳狀晶目w之頂表面或底表面且 感測自晶®之頂表面或底表面反射出之雷射光，·丨量晶圓之頂The second detection position is above and/or below the 16GGa, 1 and 16GGe for illuminating the top surface or the bottom surface of the transparent transmission film w and sensing the top of the crystal Laser light reflected from the surface or bottom surface, the top of the wafer
----------—〜站<外，傳送帶1100、 、帶輪1400以及吸附-----------~Station< outside, conveyor belt 1100, pulley 1400 and adsorption
因此，可以理解的是， 測單元中之晶圓 以下將要詳細描 13 201201314 述的位置_綠包含有本發明之-晶_送裝置，其中此晶圓 傳送裝置包含有複數個傳送帶11GG，這些傳送帶i刚在彼此相間 隔的狀態下平行安裝’用以在晶圓放置於傳送帶謂之狀態下傳 送晶圓，-對帶輪用以驅動每—傳送帶測，以及至少一 個吸附塊1500 ’其提供於每-傳送帶_之内部空間，用以作為 一核心元件，將吸附力作用於每一傳送帶11〇〇之内表面。 而且，此晶圓傳送裝置可顧於「第丨圖」所示之視覺檢測 單元500以及稍後將描述的「第6圖」所示之一視覺檢測系統。「第 6圖」所示之視覺檢測錄將結合「第6圖」在町詳細描述。 在「第2 (a)圖」所示之實施例之中，傳送帶刪包含有一 第-傳送帶m〇a以及-第二傳送帶n_。第一傳送帶⑽如及 第二傳送帶11_可在傳導帶_彼此相間隔的狀態下相平行排 列。 當然’作為-特殊之視覺檢測，可僅提供—個傳送帶用以檢 測在一晶圓之頂表面之污染物。 第一傳送帶1100a及第二傳送帶11〇〇b可提供為相同之高 度。而且’第—傳送帶腦&及第二傳送帶議b可具有相:之 長度°第-傳送帶画a與第二傳送帶膽b之間的距離相比較 於在垂直於晶圓之傳送方向之方向上的—晶圓之寬度必須更小。 第一傳送帶1100a及第二傳送帶膽b分別可包含有一對帶 輪’驅動輪1_⑴及從動輪_ (2>驅動輪刚⑴及從 201201314 動輪難⑵可包含有—_輪测⑴以及—從動輪剛 ⑵驅動輪1400⑴透過—由驅動馬達旋轉之驅動轴驅動，以 及從動輪剛⑵錢输刪⑵_雜態下，用以支撐 透過驅動輪1400⑴移位的傳送帶_。 隨著驅動輪錢動輪轉，傳送帶移位，以及因此，傳送放 置於傳導帶之上的晶圓w。 而且，用以旋轉第一傳送帶職及第二傳送帶η_的第 -驅動輪刚a⑴及第：驅動輪14_⑴可透一驅動轴 1300a驅動。 如1第2圖」所示 心呀·助馬違12〇〇驅動的驅動軸1300a 同時驅動用以驅動第—傳送帶_a的第-驅動輪1400a⑴以 及用以驅動第：傳送帶丨嶋的第二驅動輪腦⑴，第一驅動 輪1條⑴與第二驅動輪嶋⑴可在驅動軸1論之旋轉 期間同時旋轉。 由於晶_在晶，放置於第—傳送帶贈&及第二傳送帶 1100b第一傳送帶1100a與第二傳送帶 盘第η具有相同的旋轉速度。因此，第-驅動輪論⑴ _ab⑴之Μ相同m麟輪刚a 第-驅動輪刚b⑴可透過同一驅動轴驅動。 以支撐第一傳送帶ll〇〇a之望n. 與用以支擇第二僂舰 動輪論⑵之直徑 之第二從動輪1400b (2)之直徑也 201201314 相同。此外，第一從動輪1400a (2)與第二從動輪14〇〇b (2)可 透過同一支撐軸1300b可旋轉地支撐。 每一傳送帶1100具有一内部空間s (如「第4圖」所示），該 内部空間透過組成帶輪14〇〇的驅動輪Mood)及從動輪14〇〇(2) 疋義。在該内部空間之中可更提供有一吸附塊15〇〇用以將吸附力 提供至每一傳送帶1100之内表面。 吸附塊1500可提供於第一及第二傳送帶11〇〇3及u〇〇b之每 一個。也就是說，一第一吸附塊15〇〇a可提供於第一傳送帶n〇〇a 之内部空間S之中，以及一第二吸附塊丨观可提供於第二傳送 帶1100b之内部空間之中。 因此，吸附塊之數目可根據組成本發明之晶圓傳送裝置及具 有該晶圓傳送裝置的位置制織之傳送帶之數目較。而且， 如「第2圖」所示，吸附塊15〇〇之頂表面之寬度較佳地相比較於 母一傳送▼寬度更大，以使得能夠穩定地吸附及支撐傳送帶。 吸附力作用於第一傳送帶ll〇〇a及第二傳送帶11〇〇b之内 部’特別地，作用於水平安裝的每一傳送帶1100之内表面之頂部， 用以最小化透過第一傳送帶1100a及第二傳送帶11001?傳送之晶 圓W之一厚度測量誤差。 吸附塊1500為一長桿形狀^及附塊15〇〇可在每一傳送帶11〇〇 之縱向上排列於每一傳送帶1100之内部空間s之中。 在複數個吸附孔1510a及1510b彼此相間隔的狀態下，這些 16 201201314 吸附孔1510a及mob提供於吸附塊测之頂表面之一預定區 域，用以將吸附力提供於旋轉的每一傳送帶_之底部。 如第2⑷圖」所示，複數個吸附孔1510a及1510b可提 供於吸附塊1500之頂表面之一預定區域。每一吸附孔15施及 1510b可為圓形。或者，每—吸附孔m〇a及丨遍可為長孔一 橢圓或一狹縫形。 也就是說’提供於吸附塊15〇〇之頂表面的至少一個吸附孔 blOa及blOb之剖面可為一橢圓或一長孔形。 如「第2 (b)圖」所示之吸附孔151〇a，及151〇b，提供為在垂 直於每-傳送帶1100之縱向上的方向上，長方向延伸的長孔形。 由於吸附孔1510a’及1510b，為在垂直於每一傳送帶n⑻之縱向上 的方向上長方向延伸之長孔形，因此甚至每一傳送帶11〇〇之寬度 增加時’可能穩賴吸附每-傳送帶_，由此提高測量晶圓總 厚度變化之可靠性。 形成於吸附塊1500頂表面之每一吸附孔i51〇a、i51〇b之長 度可與每一吸附孔1510a、1510b之面積成比例。隨著每一吸附孔 1510a、151〇b之面積之增加，作用於每一傳送帶之單元面積的吸 附力可減少。因此，吸附孔之尺寸、形狀以及數目與吸附孔之間 的間隔可根據系統之類型易變地提供。 而且，如「第2 (c)圖」所示，提供於吸附塊1500之頂表面 的吸附孔151〇a、1510b及1510a’、1510b’可為交替排列的長孔及 17 201201314 圓形。 本㈣之晶_钱置及具有細位置_隸可 檢測之晶圓通過複數個平行之傳送帶傳送。 > 提爾送帶_之仙在於需_—賴測器， 感測雜供於各傳送帶1100之間或傳送帶謂之外部 ’ 雷射光照射於透過傳送帶1100傳送的晶圓％之頂表面或底表 面，以及在斜涉傳送料，_«之面或底表面之相對 位置。 在本發明之晶圓傳送裝置及具有其的位置感測系統之中，至 少-個檢麻置可提供於傳送帶_之間或傳送帶_之外 部’以及-雷射感測器丨·及17_ (如「第4圖」所示）可提 供於第-至第三檢.置16()()a、16_、職。之上與/或之下， 用以將雷射光照射至透過傳送帶11〇(H專送之晶圓w之頂表面或 絲面以及感測自晶圓之頂表面或絲面反射出之雷射光，用 以測量晶圓之頂表面或底表面之相對位置。 雷射感湘將雷射光騎至待檢狀晶U w之職面及絲 面且接受自晶圓W之頂表面或底表面反射出之雷射光，用以測量 晶圓之頂表面之位置（高度）及絲面之位置（高度），以及根據 該偏差（高度偏差）測量待檢測的晶圓冒之總厚度變化或厚度。 可提供第一至第三檢測位置16〇〇a、1600b、l6〇〇c用以測量 一晶圓W之頂表面及底表面之相對位置（高度等）。 201201314 也就是說，將雷射光照射至晶圓w之頂表面及底表面的雷射 感測器提供於第一至第三檢測位置l6〇〇a、l6〇〇b、l6〇〇c之上及 之下，用以在傳送晶圓w時，測量晶圓w之厚度及晶圓w之頂 表面或底表面之相對位置。 因此’可能根據第一至第三檢測位置1600a、1600b、1600c 之數目，關於晶圓w之總面積，精確測量晶圓w之厚度或頂表 面及底表面之相對位置。 如「第2(a)圖」所示，第一至第三檢測位置16〇〇a、16〇%、 16〇〇C可包含有提供於第一傳送帶ll〇〇a及第二傳送帶ii〇〇b之外 部的第-位置（16〇〇a& 1600c)，以及一提供於第一傳送帶删& 與第二傳送帶1100b之間的-第-位置（1600b)。而且，-對雷 射感測器可提供於每一個第一至第三檢測位置16()()a、丨祕、 1600c。這裡’―對餘感·可包含有—提供於日日日圓之頂表面上 及晶圓之底表面下的雷射感測器。 因此’總數目為6個的雷射感測器可提供於三個檢測位置（第 一至第二檢測位置i6〇〇a、1600b以及1600c)之上或之下。 由於以下將要福述的雷射感測器（圖未示），提供於每一個第 -至第三檢測位置_a、刪b以及刪^之上或之下，因此， 如第2 (a)圖」所示，第一至第三檢測位置1600a、1600b以及 16敝可不與第—及第二傳送帶llGGa及llGGb相干涉。 因此’如「第2 (a)圖」至「第2 (c)圖」之平面圖所示， 19 201201314 第-至第三檢麻置議a、_b从_坪供於各傳送帶 之外部與傳送帶之間。 位於第一傳送帶應讀第二傳送帶】_之間，第一傳逆 帶腦a之外部以及第二傳送帶】驅之外部的第一至第三檢測 位置職、驅以及職可在其—縱向上放置於第 1100a及第二傳送帶11㈣之—平分線1之上。_塊之#心也7 魏縱向上放置於第一傳送帶及第二傳送帶_b之一平 分線之上’以使得當晶圓Wif過鄰近的檢測位置時，能夠可靠地 獲得其上放置有晶圓W的傳送帶之吸附。 这是因為’由於帶輪產生的振動或帶輪之_高度偏差，傳 送帶之間的高度偏差可在每-傳送帶的时每—傳送帶之中間的 區域出現’結果總厚度變化測量之可靠性可降低。 為此，吸附塊在其縱向上，可提供於透過第一傳送帶則加 及第二傳送帶删b之―平分線丨能賴分為兩個的一區域。 而且’當第-及第二傳送帶110〇aA11〇〇b按照「第2⑷ 圖」一至「第2 (c)圖」所示提供時，可提供三個檢測位置。當提 -個傳送▼時，可總共提供四個檢測位置。也就是說，晶圓之 總厚度變化及厚度可在待檢狀L寬度方向上變化，以及 =此’檢測位置之數目増加用以提高總厚度變化測量之可靠性。 田傳之數目增加時’至少一個雷射感測器可提供於各傳送帶 之間定義的一空間之中。 201201314 也就是說，可能根據晶圓之尺寸可靈活地確定雷射感測器之 數目，且可能劃分執行總厚度變化測量的晶圓之位置。 較佳地，當傳送帶之數目為㈣，至少可提供Ν+ι個總厚度 變化測1位置’用績高在垂直於關之傳送方向的橫向上的總 厚度變化測量之可靠性。 第3圖」係為在本發明之晶圓傳送裝置及具有其的位置感 測系統中’將—待檢測之晶_送至檢測位置之前部及後部之過 私之平面®。將省去與結合「第2圖」之描述相重複之描述。 一放置於彼此相間隔的複數個傳送帶之頂部的，待檢測之晶 圓通過這些檢赚置。也錢說，<A1>部份麵傳賴入檢測位 置的晶圓W之部份，以及<A2>部份表示傳送通過檢測位置的晶圓 W之部份。 因此’當通過<A1>部份的晶圓W之右側進入檢測位置，以使 得測量晶圓W之總厚度變化或厚度時，傳送帶·透過吸附塊 1500之及附狀態較佳在全部部份之上，即〈入>部份之上維持。 也就是說’較佳地，在進入檢測位置之後，直至晶圓完全通 過檢測位置，各傳送帶在全部<A>部份之上剌各_塊保持吸 附。換句話而言，如果在晶圓之右嫩人檢.置之後傳導帶（i〇〇 開始透過各吸附塊吸附，或者如果在晶圓通過檢測位置之前傳送 W100之吸附透過各吸附塊釋放，則總厚度變化測量之實驗條件 變化’產生降低檢測可靠性之結果。 21 201201314 因此，在待檢測之晶圓通過檢測位置時，需要在吸附塊與這 些傳送待1100之間維持吸附。也就是說，較佳地，在待檢測之晶 圓之右側進入檢測位置之前透過吸附塊1500獲得傳送帶1100之 吸附’並且直至待檢測之晶圓之左侧通過檢測位置，不釋放傳送 帶1100之吸附狀態。 因此’當待檢測之晶圓通過檢測位置時’需要在吸附塊15〇〇 與傳送帶1100之間維持吸附狀態。較佳地，每一吸附塊15〇〇具 有一長度d (B) (>2*d (W))，該長度大於傳送方向上晶圓之寬 度d (W)之兩倍，以使得在待檢測之晶圓之右側進入檢測位置之 前，吸附塊1500的傳送帶11〇〇之吸附開始，並且直止待檢測的 晶圓之左側通過檢測位置，不釋放傳送帶11〇〇之吸附狀態。 提供上述需求，以使得在測量待檢測之晶圓之總厚度變化之 月_J，其上放置有待檢測之傳送帶之全部傳送帶透過位於傳送帶之 下的吸附塊吸附。 更特別地，由於複數個吸附孔151〇a及151〇b形成於每一吸 附塊15GG之頂表面之預定區域，較佳地，在每—吸附塊15〇〇之 頂表面形成的吸附孔之中的預定部份<A> (=<A1> + <A2>)之長 度d ( = dl + d2)相比較於傳送方向上待檢測之晶圓之寬度d (% 之兩倍更大。14是因為’甚至當每—吸附塊i具有相當於傳送 方向上a日圓之寬度d (W)之兩倍更大時，吸附孔可不遍及每一吸 寸鬼500之頂表面形成，吸附力同時通過形成於每一吸附塊的吸 22 201201314 附孔作用。 、、，「第4 (a)圖」及「第4 (b)圖」係為根據本發明之晶圓傳 送裝·置及具有其的位置感測糸統之側視圖。特別地，「第4 (&)圖」 表不一待檢測之晶圓w進入一檢測位置之狀態，以及「第4 圖」表示待檢測之晶圓W恰好在脫離一檢測位置之前之狀態。 如上所述，吸附塊1500可提供於透過各傳送帶及帶輪14〇〇 定義之内部空間s之中，以便保證傳送晶圓w的每一傳送帶15〇〇 之平坦狀態，測量其頂表面或底表面之相對位置。每-吸附塊！5〇〇 配設為-長桿形。每一吸附塊15〇〇在每一傳送帶ιι〇〇之縱向上， 排列於每—傳送帶·之内部空間s之中。每—吸附塊测將 吸附力作用至水平排列的每一傳送帶11〇〇之頂部。 作用至每一傳送帶1100的吸附力提高總厚度變化測量之精確 度，並且防止在晶圓w之傳送期間可產生的晶圓之滑動。 母一吸附塊1500可具有至少一個定義於其中的主流通道 1530。而且，每一吸附塊15〇〇可具有至少一個吸附部份154〇，吸 附力通過吸附部份作用至主流通道153〇。此外，每一吸附塊15〇〇 • 可八有複數個支流通道1520，用以允許主流通道與吸附孔 及1510b (如「第3圖」所示）彼此相聯繫。 吸附力可通過形成於每一吸附塊15〇〇之吸附孔單獨作用。然 而’在根據本發明之晶圓傳送褒置及具有其的位置感測系統之 中，用以將吸附力提供至吸附孔的至少一個主流通道153〇提供於 23 201201314 每一吸附塊1500之中，以及這些吸附孔通過支流通道1520與主 流通道相聯繫。 在「第4 (a)圖」及「第4 (b)圖」所示之實施例中，每一 吸附塊1500具有一定義於其中的主流通道1530以及兩個吸附部 份1540a及1540b，吸附力通過吸附部份1540a及1540b提供至主 流通道1530。 吸附部份之數目可考慮主流通道1530之長度確定。 每一吸附部份1540a及1540b可與一真空泵相連接用以將吸 附力提供至主流通道1530。如「第4 (a)圖」及「第4 (b)圖」 所示，主流通道可提供於水平方向上，以及支流通道152〇在支流 通道1520與主流通道1530相聯繫之狀態下，提供於垂直方向。 由於每一傳送帶1100水平地排列且吸附孔形成於每一吸附塊 1500，以使得這些吸附孔在每一傳送帶11〇〇之縱向上彼此相間 隔，主流通道1530還可在與每一傳送帶n〇〇之安裝方向相同的 方向上，即’水平方向形成。 支流通道1520之數目可與吸附孔之數目相等。也就是說，支 流通道1520可與吸附孔-對一相對應、，以便通過吸附孔均句地維 持每-傳送帶議之吸附力。較佳地，每—吸附塊15〇〇 之頂表面之高度hi對應於每-帶輪刚之頂部之高度w。 也就是說，如果每-吸附塊！之頂表面之高度μ相比較 於每-帶輪剛之頂部之高度h2更高，則_塊與傳送帶之間 24 201201314 的磨擦力可增大。另—方面，如果每-吸附塊15GG之頂表面之高 度Μ相比較於每一帶輪14〇〇之頂部之高度h2更低，可增加傳送 帶之下垂。 而且，根據本發明之位置感測系統可包含有一提供於檢測位 置之上與/或之下的雷射感測器17〇〇&及17〇〇b，用以將雷射光照 射至透過傳送帶麵傳送之晶_縣面或絲面且_自晶圓 之頂表面或絲面反㈣之魏光，肋繼晶圓之頂表面或底 表面之相對位置。 由於雷射感· 17_及17_將雷射束照射至—對象且感 測自該縣之頂表面及絲面反邮之t射光1明量反射位 置之高度，根據對象之頂表面與絲面之_高度偏差測量對象 之厚度且測量對象之頂表面及底表面之高度，因此除了對象之高 度之外’可_量縣之反射位置之彎曲或縣之概面或絲 面之相對位置。 面之下 置 因此，在縣之職面或絲面之__確確認之情況 下’-雷射_器提供於縣之底表面之下或縣之頂表面之上 用以測量對象之厚度，以使得測量縣之底表面或頂表面之高 度?此，雷射感測器可不同時提供至對象之頂表面之上及底表 ，用以測量對象之厚度或對象之頂表面或底表面之相對位 ’根據本發明之位 如「第4(a)圖」及「第4(b)圖」所示 25 201201314 置感測系統1000可包含有提供於檢測位置（如「第3圖」所示） 之上或之下的一頂部雷射感測器17〇〇a& 17〇〇b及一底部雷射感 測器1700a及1700b，用以測量透過傳送帶11〇〇傳送之晶圓冒之 頂表面及底表面之高度且因此測量晶圓W之總高度變化或厚度。 頂部雷射感測器1700a及1700b以及底部雷射感測器n〇Oa 及1700b可向通過檢測位置的晶圓w之頂表面及底表面照射雷射 光，以及感測自晶圓W之頂表面及底表面反射出之雷射光，用以 測量通過檢測位置的晶圓之頂表面及底表面之高度。每一雷射感 測器1700a及1700b可包含有一雷射二極體，用以將雷射光照射 至晶圓之頂表面及底表面，一光學元件（一 CM〇s元件），用以感 測反射之雷射光，以及一聚光鏡，用以將反射之光線聚集至光學 元件。而且，一用以感測具有反射之固定角度的雷射光之感測器， 以及一用以感測具有反射之變化角度的雷射光之感測器可用做每 一雷射感測器。下文中，將描述應用一感測具有反射之變化角度 的雷射光的感測器之實施例。 因此，可能基於其上聚集有反射雷射光的光學元件之晝素位 置，根據晶圓之厚度變化，用以測量表面之高度。 如「第4 (a)圖」所示，進入檢測位置的晶圓w之總厚度變 化或厚度透過提供於晶圓W之頂表面上及晶圓w之底表面下的 頂部雷射感測器1700a及1700b以及底部雷射感測器17〇如及 1700b測量。 26 201201314 頂部雷射感測器1700a及1700b以及底部雷射感測器1700a 及1700b可在晶圓之傳送方向上感測透過傳送帶iioo傳送的晶圓 之厚度變化。 而且，如以上結合「第2圖」及「第3圖」所述，可提供複 數個檢測位置。此種情況下，可能確認晶圓之總厚度分佈或全部 晶圓之頂表面或底表面之相對位置。 當自頂部雷射感測器1700a及1700b照射出之光線在鄰近晶 圓之右侧以角度Θ1 (如「第4 (a)圖」所示）自晶圓之頂表面反 射出時’自頂部雷射感測器17〇〇a及1700b照射出之光線在鄰近 晶圓之左側以角度Θ1，（如「第4(b)圖」所示）自晶圓之頂表面 反射出，以及自底部雷射感測器17〇〇a及1700b照射出之光線在 鄰近晶圓之右侧以角度Θ2(如「第4 (a)圖」所示）自晶圓之底 表面反射出，而自底部雷射感測器17〇〇a及1700b照射出之光線 在鄰近晶圓之左侧以角度Θ2’（如「第4 (b)圖」所示）自晶圓之 頂表面反射出，能夠看出晶圓之厚度分佈在晶圓之傳送方向上變 化。 如果如此之厚度變化超出-可允許之誤差，則晶圓可被識別 且分類’由此防止晶圓之不必要的後處理。 、，「第5⑷圖」至「第5㈦圖」係為根據本發曰月之晶圓傳 送震置及具有其的位置感測系統之實施例之側視圖。將省去與辞 合「第1圖」至「第4圖」所重複之描述。 ^ ° 27 201201314 在「第5 (a)圖」所示之實施例中，一主流通道定義於每一 吸附塊1530之中。然而，與以前之描述不相同，僅提供一個吸附 部份1540 ’吸附力通過吸附部份1540提供至主流通道153〇。也 就疋說’當主流通道之長度較小時’吸附部份1540之數目可減少。 「第5 (b)圖」所示之實施例與「第5 (a)圖」所示之實施 例相同之處在於提供有一主流通道及一吸附部份。然而，「第5(b) 圖」所示之實施例與「第5 (a)圖」所示之實施例不同之處在於 主流通道劃分為一第一主流通道1530 ( 1)以及一第二主流通道 1530 (2)。 也就是說，當根據晶圓之位置及尺寸不需要對一不必要區域 作用吸附力時，可能根據晶圓傳送之位置，選擇性地通過分離的 第一及第二主流通道1530 (1)及153〇 (2)提供吸附力。 而且’當真空泵之能力較小時’結果難以通過長主流通道提 供真二壓力，主流通道可劃分為複數個流動通道，吸附力通過流 動通道可選擇性地提供。 「第5 (c)圖」所示之實施例與「第5 (b)圖」所示之實施 例相同之處在於，主流通道劃分為一第一主流通道l53〇 ( i )以及 -第二主流通道153〇⑵。然而，「第5 (c)圖」所示之實施例 與「第5 (b)圖」所示之實施例不相同之處在於，提供兩個吸附 部份测⑴及154G⑵用以分別向第—主流通道測⑴ 以及第一主流通道1530 (2)提供吸附力。 28 201201314 第-主流通道1530 (1)及第二主流通道153Q⑵可在每一 吸附塊之縱向上排列成一行。 當第-主流通道1530 (1 )及第二主流通道測⑺之一個 較長或當真空栗之動力不充分時’第-主流通道153〇⑴及第二 主流通道153〇⑵可侧’魏倾_份丨遍⑴、i54〇f ⑴、i遍⑵以及1遍⑵可形成於第_主流通道i53〇⑴ 及第二主流通道1530 (2)之每-個，以及獨立的真空栗可與各吸 附部份相連接用以提供吸附力。 因此’在上述之根據本發明之晶_钱置及具有其的位置 感測系統之中，可能在晶圓之檢測期間敎傳送—晶圓，由此提 高晶圓之總厚度變化測量之穩定性，減少铸體之缺陷率且獲得 成本之降低。 「第6⑷圖」至「第6(e)圖」係為根據本發明之一視覺 檢測系統之-實例之側視圖。更特別地，「第6 u)圖」係為用以 檢測-晶圓之頂表面之-視覺檢測系統之側視圖，以及「第…） 圖」係為用以檢測-晶圓之底部之-視覺檢測系統之側視圖。將 省去與結合「第1圖」至「第5圖」相重複之描述。 「第6⑷圖」及「第6(b)圖」所示之視覺檢測系統可包 含有-傳送帶2100，_在；W放置於傳送帶細之上的狀 態下傳送-晶圓W，-對帶輪1400，用以驅動傳送帶屬，一吸 附塊讓，其提供於傳送帶誦崎之—扣s，料將吸附力 29 201201314 提供至傳送帶21GG之喊面，絲2_a⑴、2_a⑵、28_ (1) 以及2800b (2)，其提供於傳送帶2100之上或之下，將光線 照射至透過傳送帶2100傳送的晶圓w之頂表面或底表面，以及 頂或底捕縣置27GGa或27GGb，用以捕獲自光源28GGa( 1 )、2800a (2) 、2_b⑴以及28_⑵照射出或自晶圓反射出之光線。 以上結合「第1圖」描述之第一至第三視覺檢測單元100、200 以及300提供為通過行掃描主要檢測污染物或裂紋。然而，「第6 圖」中所示之視覺檢測系統2_可通過面掃描，而非行掃描，檢 測晶圓之表面用以捕獲晶圓之預定區域。 而且，在「第6圖」中所示之視覺檢測系統2000之中，用以 捕獲自光源2800a ( 1)、280〇a⑵、2_b⑴以及2_b⑵ 照射出之光線的頂或底捕獲裝置27〇〇a或27〇〇b提供於晶圓w之 頂表面之上或晶圓W之絲面之下，肋根據待檢測之晶圓表面 是否為晶圓之頂表面或底表面，捕獲晶圓w之頂表面或晶圓…之 底表面。 因此’在「第6(a)圖」所示之實施例中，一頂捕獲裝置27〇〇& 可在b曰圓W放置於傳送帶21〇〇之上的狀態下，提供於透過傳送 帶2100傳送的晶圓W之頂表面之上。另一方面，在「第6 (b) 圖」所示之實施例中，一底捕獲裝置27〇此可在晶圓冒放置於傳 送帶2100之上的狀態下，提供於透過傳送帶21〇〇傳送的晶圓w 之底表面之下。 201201314 而且，至少一個光源可提供於頂捕獲裝置2700&及底捕獲裝 置2700b之附近。如「第6(a)圖」及「第6 (b)圖」所示，一 對光源2800a (1)及2800a (2)提供於頂捕獲裝置2700a之前或 之後，以及一對光源2800b (1)及2800b (2)提供於底捕獲裝置 2700b 之前或之後。光源 2800a ( 1)及 2800a (2 )與 2800b ( 1) 及2800b (2)排列為” V”形以最小化一捕獲影像之亮度偏差。 頂捕獲裝置2700a及底捕獲裝置2700b可安裝為在垂直方向 上捕獲晶圓之頂表面及底表面。 在「第6 (b)圖」所示之實施例中，晶圓之底表面暴露以捕 獲晶圓之底表面。因此，可提供複數個傳送帶，以使得傳送帶彼 此相間隔用以暴露晶圓之底表面。換句話而言，不需要視覺檢測 系統包含有複數個傳送帶僅檢測晶圓之頂表面。 在「第6(a)圖」及「第6(b)圖」所示之視覺檢測系統2000 之中，捕獲自各光源照射出及自晶圓反射出之光線用以檢測晶圓 之表面上的一特定區域之缺陷。 而且’「第6 (a)圖」及「第6 (b)圖」所示之視覺檢測系 統2000a及2000b包含有組成根據本發明之晶圓傳送裝置的傳送 帶2100、帶輪2400 ( 1)及2400⑵以及吸附塊2500用以穩定 傳送待檢測之一晶圓。 而且’每一吸附塊2500可具有吸附部份2540a及2540b ’吸 附力通過吸附部份2540a及2540b提供至主流通道2530。此外， 31 201201314 每-吸附塊250G可具有允許主流通道253㈣複數個支流通道 2520。 如上所述，除了「第6 (a)圖」及「第6 (b)圖」所示之視 覺k測系統之外’包含有在晶gj之傳送躺傳送帶的吸附塊 之晶圓傳送裝置可提供至「第】圈」所示之各視覺檢測單元。 在根據本發明之晶圓傳送裝置及具有其的位置感測系統之 中，可能在晶圓檢測期間穩定地傳送_晶圓。 而且’在根據本發明之晶置及具有其的位置感測系 統之中，可能提高總厚度變化測量之可靠性。 而且’在根據本發明之晶_送織及具有其的位置感測系 統之中，可能提高總厚度變化測量之可靠性，由此減少半導體之 缺陷率且減少成本。 本領域之觸人·當意朗在顿縣伽卿之 利範圍所揭示之她之精神和範圍的情況下，所作之更動_ ===明之專利保護範圍之内。關於本發明所界定之_ 摩巳圍明參照所附之申請專利範圍。 【圖式簡單說明】 第1圖係為-晶圓檢測製程之概念圖；Therefore, it can be understood that the wafer in the measuring unit will be described in detail below. 13 201201314 The position_green includes the crystal-delivery device of the present invention, wherein the wafer transfer device comprises a plurality of conveyor belts 11GG, these conveyor belts i is mounted in parallel in a state of being spaced apart from each other for transferring wafers in a state in which the wafer is placed on a conveyor belt, - a pulley for driving each conveyor, and at least one adsorption block 1500' The inner space of each conveyor belt is used as a core component to apply an adsorption force to the inner surface of each conveyor belt 11〇〇. Further, the wafer transfer apparatus can take care of the visual inspection unit 500 shown in the "figure map" and the visual inspection system shown in "Fig. 6" which will be described later. The visual inspection records shown in "Fig. 6" will be described in detail in the town in conjunction with "Fig. 6". In the embodiment shown in "Fig. 2 (a)", the conveyor belt includes a first conveyor belt m〇a and a second conveyor belt n_. The first conveyor belt (10) and the second conveyor belt 11_ may be arranged in parallel in a state in which the conduction belts are spaced apart from each other. Of course, as a special visual inspection, only one conveyor belt can be provided to detect contaminants on the top surface of a wafer. The first conveyor belt 1100a and the second conveyor belt 11〇〇b can be provided at the same height. Moreover, the 'first-conveyor brain& and the second conveyor belt b can have a phase: the distance between the first-conveyor belt a and the second conveyor belt b is compared to the direction perpendicular to the conveying direction of the wafer. The width of the wafer must be smaller. The first conveyor belt 1100a and the second conveyor belt b may respectively include a pair of pulleys' drive wheels 1_(1) and driven wheels _ (2> drive wheels just (1) and from 201201314. The wheels are difficult (2) may include -_ wheel test (1) and - driven wheels Just (2) drive wheel 1400 (1) through - driven by the drive shaft of the drive motor, and the driven wheel just (2) money to delete (2) _ miscellaneous state to support the transmission belt 1400 (1) displacement of the conveyor belt _. The conveyor belt is displaced, and thus, the wafer w placed on the conductive belt is transferred. Moreover, the first driving wheel a (1) and the: driving wheel 14_(1) for rotating the first conveyor belt and the second conveyor belt η_ are transparent A drive shaft 1300a is driven. As shown in Fig. 2, the drive shaft 1300a of the drive shaft is driven to drive the first drive wheel 1400a (1) for driving the first conveyor belt_a and to drive the first: The second driving wheel (1) of the belt 丨嶋, the first driving wheel 1 (1) and the second driving rim (1) are simultaneously rotatable during the rotation of the driving shaft 1. Since the crystal is in the crystal, it is placed on the first conveyor belt & And the second conveyor belt 1100 b The first conveyor belt 1100a has the same rotational speed as the second belt pulley η. Therefore, the first-drive wheel theory (1) _ab(1) is the same as the m-wheel wheel a. The first-drive wheel just b(1) can be driven through the same drive shaft. The first conveyor belt 11a is the same as the diameter of the second driven wheel 1400b (2) for selecting the diameter of the second stern wheel theory (2). Also, the diameter of the second driven wheel 1400b (2) is also 201201314. In addition, the first driven wheel 1400a (2) The second driven wheel 14bb (2) is rotatably supported by the same support shaft 1300b. Each conveyor belt 1100 has an internal space s (as shown in "Fig. 4"), and the internal space passes through the composition pulley 14〇〇 drive wheel Mood) and driven wheel 14〇〇(2) 疋义. An adsorption block 15 is further provided in the inner space for supplying an adsorption force to the inner surface of each of the conveyor belts 1100. The adsorption block 1500 can be provided for each of the first and second conveyor belts 11〇〇3 and u〇〇b. That is, a first adsorption block 15A may be provided in the internal space S of the first conveyor belt n〇〇a, and a second adsorption block may be provided in the internal space of the second conveyor belt 1100b. . Therefore, the number of adsorption blocks can be compared with the number of conveyor belts constituting the wafer transfer apparatus of the present invention and the position of the wafer transfer apparatus. Further, as shown in Fig. 2, the width of the top surface of the adsorption block 15 is preferably larger than that of the mother-transport ▼ to enable stable adsorption and support of the conveyor belt. The adsorption force acts on the inside of the first conveyor belt 11a and the second conveyor belt 11b, in particular, acting on the top of the inner surface of each of the horizontally mounted conveyor belts 1100 for minimizing transmission through the first conveyor belt 1100a and The second conveyor belt 11001? is one of the wafer W thickness measurement errors transmitted. The adsorption block 1500 is a long rod shape and the attachment block 15 is arranged in the inner space s of each of the conveyor belts 1100 in the longitudinal direction of each of the conveyor belts 11'. In a state in which a plurality of adsorption holes 1510a and 1510b are spaced apart from each other, the 16 201201314 adsorption holes 1510a and mob are provided in a predetermined region of the top surface of the adsorption block for providing the adsorption force to each of the rotating belts. bottom. As shown in Fig. 2(4), a plurality of adsorption holes 1510a and 1510b may be provided in a predetermined region of the top surface of the adsorption block 1500. Each of the adsorption holes 15 is applied to 1510b and may be circular. Alternatively, each of the adsorption holes m〇a and the turns may be long holes, an ellipse or a slit. That is, the cross section of at least one of the adsorption holes blOa and blOb provided on the top surface of the adsorption block 15A may be an ellipse or a long hole. The adsorption holes 151a, 151a, as shown in the "Fig. 2(b)", are provided in the form of long holes extending in the longitudinal direction in the longitudinal direction of each of the conveyor belts 1100. Since the adsorption holes 1510a' and 1510b are long hole shapes extending in the longitudinal direction perpendicular to the longitudinal direction of each of the conveyor belts n (8), even when the width of each of the conveyor belts 11 is increased, it is possible to stabilize the adsorption per conveyor belt. _, thereby improving the reliability of measuring the total thickness variation of the wafer. The length of each of the adsorption holes i51a, i51b formed on the top surface of the adsorption block 1500 may be proportional to the area of each of the adsorption holes 1510a, 1510b. As the area of each of the adsorption holes 1510a, 151b increases, the adsorption force acting on the unit area of each of the conveyor belts can be reduced. Therefore, the size, shape, and number of the adsorption holes and the interval between the adsorption holes can be variably provided depending on the type of the system. Further, as shown in "Fig. 2(c)", the adsorption holes 151a, 1510b, and 1510a', 1510b' provided on the top surface of the adsorption block 1500 may be alternately arranged long holes and 17 201201314 circular. The wafers of this (4) and the wafers with fine position _ can be detected are transmitted through a plurality of parallel conveyors. > Tyre's delivery belt is in need of a _-detector, sensing miscellaneous supply between each conveyor belt 1100 or the conveyor belt is said to be externally. 'Laser light is irradiated on the top surface or bottom of the wafer transmitted through the conveyor belt 1100. The surface, as well as the relative position of the traverse material or the bottom surface. In the wafer transfer apparatus of the present invention and the position sensing system therewith, at least one inspection apparatus may be provided between the conveyor belts_ or the exterior of the conveyor belt_ and - the laser sensors 及· and 17_ ( As shown in "Figure 4", it can be provided in the first to third inspections. Set 16 () () a, 16_, position. Above and/or below, for irradiating the laser light to the top surface or the surface of the wafer W through which the H is delivered, and the laser light reflected from the top surface or the surface of the wafer For measuring the relative position of the top or bottom surface of the wafer. The laser senses the laser light to the surface and surface of the crystal to be inspected and receives the reflection from the top or bottom surface of the wafer W. The laser light is used to measure the position (height) of the top surface of the wafer and the position (height) of the surface of the wafer, and to measure the total thickness variation or thickness of the wafer to be detected according to the deviation (height deviation). The first to third detecting positions 16A, 1600b, and 16c are used to measure the relative positions (heights, etc.) of the top surface and the bottom surface of a wafer W. 201201314 That is, the laser light is irradiated to The laser sensor of the top surface and the bottom surface of the wafer w is provided above and below the first to third detecting positions l6〇〇a, l6〇〇b, l6〇〇c for transferring the wafer w, measuring the thickness of the wafer w and the relative position of the top or bottom surface of the wafer w. According to the number of the first to third detecting positions 1600a, 1600b, and 1600c, the thickness of the wafer w or the relative positions of the top surface and the bottom surface are accurately measured with respect to the total area of the wafer w. For example, "Fig. 2(a)" As shown, the first to third detecting positions 16〇〇a, 16〇%, 16〇〇C may include a first position provided outside the first conveyor belt 11a and the second conveyor belt ii〇〇b ( 16〇〇a& 1600c), and a - position-to-position (1600b) provided between the first conveyor belt & and the second conveyor belt 1100b. Moreover, the -to-laser sensor can be provided for each of the first To the third detection position 16 () () a, secret, 1600c. Here - "to the residual · can include - laser sensor provided on the top surface of the Japanese yen and under the bottom surface of the wafer Therefore, a total of six laser sensors can be provided above or below the three detection positions (first to second detection positions i6〇〇a, 1600b, and 1600c). a laser sensor (not shown) is provided above or below each of the first to third detection positions _a, b, and As shown in Fig. 2(a), the first to third detection positions 1600a, 1600b, and 16敝 may not interfere with the first and second conveyor belts llGGa and llGGb. Therefore, 'as in the second (a) diagram) As shown in the plan view of Figure 2 (c), 19 201201314 The first to the third inspections a, _b from the _ ping between the outside of each conveyor belt and the conveyor belt. The first conveyor belt should read the second conveyor belt Between _, the first to the outside of the brain and the second conveyor belt, the first to third detection positions outside the drive, the drive and the job can be placed in the longitudinal direction of the 1100a and the second conveyor belt 11 (four) - above the bisector 1. The _ block #心7 is placed on the bisector of the first conveyor belt and the second conveyor belt _b in the longitudinal direction so that when the wafer Wif passes the adjacent detection position, the crystal can be reliably obtained thereon. Adsorption of a round W conveyor belt. This is because 'the height deviation between the belts can occur in the middle of each belt-in the middle of the conveyor belt due to the vibration generated by the pulley or the height deviation of the pulley. The reliability of the measurement of the total thickness variation can be reduced. . To this end, the adsorption block can be provided in the longitudinal direction of the first conveyor belt, and the second conveyor belt can be divided into two regions of the bisector. Further, when the first and second conveyor belts 110a, A11, and b are provided as shown in "2(4)" to "2 (c)", three detection positions are provided. When one is transmitted ▼, a total of four detection positions are provided. That is, the total thickness variation and thickness of the wafer can be varied in the width direction of the L to be inspected, and the number of <detection positions is added to improve the reliability of the measurement of the total thickness variation. When the number of Tian Chuanzhi increases, at least one laser sensor can be provided in a space defined between the conveyor belts. 201201314 That is to say, it is possible to flexibly determine the number of laser sensors depending on the size of the wafer, and it is possible to divide the position of the wafer performing the total thickness variation measurement. Preferably, when the number of conveyor belts is (four), at least Ν+ι total thickness variations can be provided to determine the reliability of the measurement of the total thickness variation in the transverse direction perpendicular to the conveying direction of the closing. Fig. 3 is a plan view for sending the crystal to be detected to the front and rear of the detection position in the wafer transfer apparatus of the present invention and the position sensing system having the same. A description overlapping with the description of "Fig. 2" will be omitted. When placed on top of a plurality of conveyor belts spaced apart from each other, the crystal to be detected passes through these checks. It is also said that <A1> partially passes the portion of the wafer W that is in the detection position, and the <A2> portion indicates the portion of the wafer W that passes through the detection position. Therefore, when the detection position is entered on the right side of the wafer W passing through the <A1> portion, so that the total thickness variation or thickness of the wafer W is measured, the conveyor belt through the adsorption block 1500 is preferably in all parts. Above, that is, above the <in> section. That is to say, 'betterly, after entering the detection position, until the wafer completely passes through the detection position, each of the conveyor belts remains absorbing on all of the <A> portions. In other words, if the conductive tape is placed on the right side of the wafer (i〇〇 begins to adsorb through each adsorption block, or if the adsorption of W100 is transmitted through the adsorption block before the wafer passes the detection position, The change in the experimental conditions of the total thickness variation measurement produces the result of reducing the reliability of the test. 21 201201314 Therefore, when the wafer to be inspected passes the detection position, it is necessary to maintain adsorption between the adsorption block and the transfer to be treated 1100. Preferably, the adsorption of the conveyor belt 1100 is obtained through the adsorption block 1500 before the right side of the wafer to be inspected enters the detection position and until the left side of the wafer to be inspected passes the detection position, and the adsorption state of the conveyor belt 1100 is not released. 'When the wafer to be inspected passes the detection position', it is necessary to maintain an adsorption state between the adsorption block 15A and the conveyor belt 1100. Preferably, each adsorption block 15A has a length d (B) (> 2 *d (W)), the length is greater than twice the width d (W) of the wafer in the transport direction, so that the adsorption block 1500 is before the right side of the wafer to be inspected enters the detection position The adsorption of the tape 11 starts, and the left side of the wafer to be detected passes through the detection position, and the adsorption state of the conveyor 11 is not released. The above requirement is provided to make the total thickness variation of the wafer to be detected measured. In the month _J, all the conveyor belts on which the conveyor belt to be tested is placed are adsorbed by the adsorption block located under the conveyor belt. More specifically, since a plurality of adsorption holes 151a and 151〇b are formed at the top of each adsorption block 15GG The predetermined area of the surface, preferably the length d of the predetermined portion <A>(=<A1> + <A2>) among the adsorption holes formed on the top surface of each of the adsorption blocks 15? = dl + d2) compared to the width d of the wafer to be inspected in the transport direction (more than twice the %. 14 is because 'even when each-adsorbing block i has a width d corresponding to the a-day in the transport direction ( When W) is twice as large, the adsorption holes may not be formed on the top surface of each of the suction ghosts 500, and the adsorption force is simultaneously applied through the suction hole formed in each adsorption block 22 201201314. ,,, "4th (a "Figure" and "Fig. 4 (b)" are crystals according to the present invention A side view of a circular transfer device and a position sensing system having the same. In particular, the "4th & map" indicates that the wafer w to be inspected enters a detection position, and "4th The figure shows the state of the wafer W to be inspected just before leaving a detection position. As described above, the adsorption block 1500 can be provided in the internal space s defined by the respective conveyor belts and the pulleys 14〇〇 to ensure the transmission of crystals. The flat state of each of the belts 15 of the circle w is measured, and the relative position of the top surface or the bottom surface is measured. Each of the adsorption blocks is set to a long rod shape. Each of the adsorption blocks 15 is arranged in the longitudinal direction of each of the conveyor belts, and is arranged in the inner space s of each conveyor belt. Each adsorption block applies an adsorption force to the top of each of the conveyor belts 11 that are horizontally aligned. The adsorption force acting on each of the conveyor belts 1100 increases the accuracy of the total thickness variation measurement and prevents slippage of the wafer that can be generated during the transfer of the wafer w. The parent-adsorption block 1500 can have at least one main flow channel 1530 defined therein. Further, each of the adsorption blocks 15b may have at least one adsorption portion 154A, and the adsorption force acts on the main flow channel 153〇 through the adsorption portion. In addition, each adsorption block 15〇〇 can have a plurality of branch channels 1520 for allowing the main channel to be associated with the adsorption holes and 1510b (as shown in Fig. 3). The adsorption force can be individually acted upon by the adsorption holes formed in each of the adsorption blocks 15〇〇. However, in the wafer transfer device and the position sensing system therewith according to the present invention, at least one main flow channel 153 for supplying an adsorption force to the adsorption hole is provided in 23 201201314 for each adsorption block 1500 And the adsorption holes are associated with the main flow passage through the branch passage 1520. In the embodiment shown in "Fig. 4 (a)" and "Fig. 4 (b)", each adsorption block 1500 has a main channel 1530 and two adsorption portions 1540a and 1540b defined therein. Force is supplied to the main flow channel 1530 through the adsorption portions 1540a and 1540b. The number of adsorbed portions can be determined in consideration of the length of the main channel 1530. Each of the adsorption portions 1540a and 1540b can be coupled to a vacuum pump for providing an absorbing force to the main flow channel 1530. As shown in "4th (a)" and "4th (b)", the main channel can be provided in the horizontal direction, and the branch channel 152 is provided in the state in which the branch channel 1520 is connected to the main channel 1530. In the vertical direction. Since each of the conveyor belts 1100 is horizontally arranged and adsorption holes are formed in each of the adsorption blocks 1500 such that the adsorption holes are spaced apart from each other in the longitudinal direction of each of the conveyor belts 11, the main flow channels 1530 can also be associated with each conveyor belt. The installation direction of the crucible is formed in the same direction, that is, 'horizontal direction. The number of branch channels 1520 can be equal to the number of adsorption holes. That is to say, the branch passage 1520 can correspond to the adsorption hole-to-one, so that the adsorption force per conveyor belt can be uniformly maintained through the adsorption holes. Preferably, the height hi of the top surface of each of the adsorption blocks 15A corresponds to the height w of the top of each of the pulleys. That is, if every - adsorption block! The height μ of the top surface is higher than the height h2 of the top of each pulley, and the friction between the block and the conveyor belt 24 201201314 can be increased. On the other hand, if the height Μ of the top surface of each of the adsorption blocks 15GG is lower than the height h2 of the top of each pulley 14〇〇, the conveyor belt sagging can be increased. Moreover, the position sensing system according to the present invention may include a laser sensor 17 〇〇 & and 17 〇〇 b provided above and/or below the detection position for illuminating the laser beam to the transmission belt The surface of the crystal is _ county or silk surface and _ from the top surface of the wafer or the surface of the silk (4), the ribs are relative to the top or bottom surface of the wafer. Because the laser sensation 17_ and 17_ illuminate the laser beam to the object and sense the height from the top surface of the county and the surface of the surface of the t-light, the height of the reflection position, according to the top surface of the object and the wire The height of the surface is measured by the thickness of the object and the height of the top surface and the bottom surface of the object. Therefore, in addition to the height of the object, the curvature of the reflection position of the county or the relative position of the county or the surface of the silk surface. Therefore, under the condition of the county's position or silk surface, the '-laser_ device is provided below the surface of the county or above the top surface of the county to measure the thickness of the object. In order to measure the height of the bottom surface or the top surface of the county, the laser sensor can be simultaneously provided on the top surface of the object and the bottom surface to measure the thickness of the object or the relative surface of the top or bottom surface of the object. The position according to the present invention is as shown in "4th (a)" and "4th (b)". 201201314 The sensing system 1000 may be provided in a detection position (as shown in "Fig. 3"). Above or below a top laser sensor 17〇〇a & 17〇〇b and a bottom laser sensor 1700a and 1700b for measuring the top of the wafer transmitted through the conveyor belt 11 The height of the surface and bottom surface and thus the total height variation or thickness of the wafer W is measured. The top laser sensors 1700a and 1700b and the bottom laser sensors n〇Oa and 1700b can illuminate the top and bottom surfaces of the wafer w passing the detection position, and sense the top surface of the wafer W. And the laser light reflected from the bottom surface is used to measure the height of the top surface and the bottom surface of the wafer passing through the detection position. Each of the laser sensors 1700a and 1700b may include a laser diode for illuminating the top surface and the bottom surface of the wafer with an optical component (a CM 〇 component) for sensing Reflected laser light, and a concentrating mirror for focusing the reflected light onto the optical component. Moreover, a sensor for sensing laser light having a fixed angle of reflection, and a sensor for sensing laser light having a varying angle of reflection can be used as each of the laser sensors. Hereinafter, an embodiment of applying a sensor that senses laser light having a varying angle of reflection will be described. Therefore, it is possible to measure the height of the surface based on the thickness variation of the wafer based on the pixel position of the optical element on which the reflected laser light is collected. As shown in "Fig. 4(a)", the total thickness variation or thickness of the wafer w entering the detection position passes through the top laser sensor provided on the top surface of the wafer W and under the bottom surface of the wafer w. 1700a and 1700b and bottom laser sensor 17 as measured by 1700b. 26 201201314 The top laser sensors 1700a and 1700b and the bottom laser sensors 1700a and 1700b sense the thickness variation of the wafer transported through the conveyor belt iioo in the direction of wafer transfer. Further, as described above in connection with "Fig. 2" and "Fig. 3", a plurality of detection positions can be provided. In this case, it is possible to confirm the total thickness distribution of the wafer or the relative position of the top or bottom surface of the entire wafer. When the light from the top laser sensors 1700a and 1700b is reflected from the top surface of the wafer at the angle Θ1 (as shown in Figure 4 (a)) from the top surface of the wafer, 'from the top The light emitted by the laser sensors 17A and 1700b is reflected from the top surface of the wafer at an angle Θ1 on the left side of the adjacent wafer (as shown in Figure 4(b)), and from the bottom. The light emitted by the laser sensors 17〇〇a and 1700b is reflected from the bottom surface of the wafer at an angle Θ2 (as shown in “Fig. 4(a)) on the right side of the adjacent wafer, and is reflected from the bottom surface of the wafer. The light emitted by the laser sensors 17〇〇a and 1700b is reflected from the top surface of the wafer at an angle Θ2' (shown in Figure 4(b)) on the left side of the adjacent wafer. The thickness distribution of the outgoing wafer varies in the direction of transport of the wafer. If such thickness variations exceed the allowable error, the wafer can be identified and classified' thereby preventing unnecessary post processing of the wafer. The "5th (4th)" to "5th (seventh) map" is a side view of an embodiment of a wafer sensing and a position sensing system having the same according to the present invention. The descriptions repeated from "1st" to "4th" will be omitted. ^ ° 27 201201314 In the embodiment shown in "Fig. 5 (a)", a main channel is defined in each of the adsorption blocks 1530. However, unlike the previous description, only one adsorption portion 1540' is provided with adsorption force through the adsorption portion 1540 to the main flow channel 153. It is also said that the number of adsorbed portions 1540 can be reduced when the length of the main channel is small. The embodiment shown in Fig. 5(b) is identical to the embodiment shown in Fig. 5(a) in that a main channel and an adsorption portion are provided. However, the embodiment shown in "5(b)" is different from the embodiment shown in "5th (a)" in that the main channel is divided into a first main channel 1530 (1) and a second. Mainstream channel 1530 (2). That is, when it is not necessary to apply an adsorption force to an unnecessary region according to the position and size of the wafer, it is possible to selectively pass the separated first and second main channels 1530 (1) according to the position of the wafer transfer. 153 〇 (2) provides adsorption. Moreover, when the capacity of the vacuum pump is small, it is difficult to provide true two pressure through the long main passage, and the main passage can be divided into a plurality of flow passages, and the adsorption force can be selectively supplied through the flow passage. The embodiment shown in Fig. 5(c) is the same as the embodiment shown in Fig. 5(b) in that the main channel is divided into a first main channel l53(i) and - second. Mainstream channel 153〇(2). However, the embodiment shown in Figure 5(c) is different from the embodiment shown in Figure 5(b) in that two adsorption partial measurements (1) and 154G (2) are provided for the respective - Mainstream channel measurement (1) and first mainstream channel 1530 (2) provide adsorption. 28 201201314 The first main channel 1530 (1) and the second main channel 153Q (2) may be arranged in a row in the longitudinal direction of each adsorption block. When one of the first-main channel 1530 (1) and the second main channel (7) is long or when the power of the vacuum pump is insufficient, the first-main channel 153 〇 (1) and the second main channel 153 〇 (2) may be side-turned. _ 丨 丨 (1), i54〇f (1), i-pass (2), and 1 pass (2) can be formed in each of the first-mainstream channel i53〇(1) and the second main channel 1530(2), and an independent vacuum pump can be used with each The adsorbed moieties are connected to provide an adsorption force. Therefore, in the above-described position sensing system according to the present invention, it is possible to transfer the wafer during the inspection of the wafer, thereby improving the stability of the total thickness variation measurement of the wafer. , reducing the defect rate of the casting body and obtaining a reduction in cost. "Section 6(4)" to "6th (e)" are side views of an example of a visual inspection system according to the present invention. More specifically, the "6th u" diagram is a side view of the visual inspection system for detecting the top surface of the wafer, and the "..." diagram is for detecting - at the bottom of the wafer - Side view of the visual inspection system. A description will be omitted that overlaps with "1st" to "5th". The visual inspection system shown in "6th (4th)" and "6th (b)" may include a conveyor belt 2100, _ in the state of W placed on the conveyor belt fine - wafer W, - pair of pulleys 1400, for driving the conveyor belt genus, an adsorption block, which is provided on the conveyor belt 诵崎之- buckle s, which is to provide the adsorption force 29 201201314 to the surface of the conveyor belt 21GG, the wires 2_a (1), 2_a (2), 28_ (1) and 2800b ( 2), which is provided above or below the conveyor belt 2100, irradiates light to the top or bottom surface of the wafer w transmitted through the conveyor belt 2100, and the top or bottom capture county 27GGa or 27GGb for capturing from the light source 28GGa (1), 2800a (2), 2_b(1), and 28_(2) light that is reflected or reflected from the wafer. The first to third visual detecting units 100, 200, and 300 described above in connection with "Fig. 1" are provided to mainly detect contaminants or cracks by line scanning. However, the visual inspection system 2_ shown in Fig. 6 can scan the surface of the wafer to capture a predetermined area of the wafer by surface scanning instead of line scanning. Further, in the visual inspection system 2000 shown in "Fig. 6", the top or bottom capturing means 27a for capturing light rays emitted from the light sources 2800a (1), 280〇a(2), 2_b(1), and 2_b(2) Or 27〇〇b is provided on the top surface of the wafer w or below the surface of the wafer W, and the rib captures the top of the wafer according to whether the surface of the wafer to be detected is the top surface or the bottom surface of the wafer. The bottom surface of a surface or wafer. Therefore, in the embodiment shown in Fig. 6(a), a top catching device 27〇〇& can be provided on the transmitting conveyor 2100 in a state where the b circle W is placed on the conveyor belt 21〇〇. Above the top surface of the transferred wafer W. On the other hand, in the embodiment shown in the "Fig. 6(b)", a bottom catching device 27 can be provided on the transporting belt 21 in a state where the wafer is placed on the conveyor 2100. The bottom surface of the wafer w. 201201314 Moreover, at least one light source can be provided in the vicinity of the top capture device 2700& and the bottom capture device 2700b. As shown in "6th (a)" and "6th (b)", a pair of light sources 2800a (1) and 2800a (2) are provided before or after the top capture device 2700a, and a pair of light sources 2800b (1) And 2800b (2) are provided before or after the bottom capture device 2700b. Light sources 2800a (1) and 2800a (2) and 2800b (1) and 2800b (2) are arranged in a "V" shape to minimize the brightness deviation of a captured image. The top capture device 2700a and the bottom capture device 2700b can be mounted to capture the top and bottom surfaces of the wafer in a vertical direction. In the embodiment shown in Figure 6(b), the bottom surface of the wafer is exposed to capture the bottom surface of the wafer. Accordingly, a plurality of conveyor belts can be provided such that the conveyor belts are spaced apart from one another to expose the bottom surface of the wafer. In other words, there is no need for a visual inspection system that includes a plurality of conveyor belts that only detect the top surface of the wafer. In the visual inspection system 2000 shown in Figures 6(a) and 6(b), light captured from and reflected from the light source is captured for detecting the surface of the wafer. A defect in a particular area. Further, the visual inspection systems 2000a and 2000b shown in "Fig. 6(a)" and "Fig. 6(b)" include a conveyor belt 2100, a pulley 2400 (1) constituting the wafer transfer apparatus according to the present invention, and 2400 (2) and the adsorption block 2500 are used to stably transfer one of the wafers to be inspected. Further, each of the adsorption blocks 2500 may have an adsorption portion 2540a and 2540b'. The adsorption force is supplied to the main flow channel 2530 through the adsorption portions 2540a and 2540b. In addition, 31 201201314 per-sorbent block 250G may have a plurality of branch channels 2520 that allow mainstream channel 253 (four). As described above, in addition to the visual k-measurement system shown in "6th (a)" and "6th (b)", the wafer transfer apparatus including the adsorption block of the transfer conveyor in the crystal gj can be Provides each visual inspection unit as shown in the "Circle". In the wafer transfer apparatus and the position sensing system therewith according to the present invention, it is possible to stably transfer the wafer during wafer inspection. Moreover, in the crystal placement according to the present invention and the position sensing system therewith, it is possible to improve the reliability of the measurement of the total thickness variation. Moreover, in the crystal-feeding and weaving system according to the present invention and the position sensing system therewith, it is possible to improve the reliability of the measurement of the total thickness variation, thereby reducing the defect rate of the semiconductor and reducing the cost. In the case of the spirit of the field and the scope of the singularity of the singularity of the singularity of the singularity of the singularity of the syllabus. With regard to the definition of the present invention, the scope of the patent application is attached. [Simple description of the diagram] Figure 1 is a conceptual diagram of the wafer inspection process;
第2 (a)圖至第2 (C)圖係為根據本發明之位 幾個實施例之平面圖； ① H 第3圖係為在本發明之位置感測系統中，將—待檢測之晶g 32 201201314 傳送至檢測位置之前部及後部之過程之平面圖； 第4 (a)圖及第4 (b)圖係為根據本發明之位置感測系統之 側視圖； 第5 (a)圖至第5 (c)圖係為根據本發明之位置感測糸統之 實施例之側視圖；以及 第6 (a)圖至第6 (b)圖係為根據本發明之一視覺檢測系統 之一實例之側視圖。 【主要元件符號說明】 1 平分線 100 第一視覺檢測單元 110 、 210 傳送帶 120 第一掃描攝影機 130 第一光源 200 第二視覺檢測單元 220 第二掃描攝影機 230 第二光源 300 第三視覺檢測單元 320 第三掃描攝影機 330 第三光源 500 視覺檢測單元 1000 位置感測系統 33 201201314 1100 1100a 1100b 1200 1300a 1300b 1400 1400 (1) 1400 (2) 1400a ( 1) 1400a (2) 1400b (1) 1400b (2) 1500 1500a 1500b 1510a ' 1510b 1510a’ 、 1510b’ 1520 1530 1530 (1) 傳送帶 第一傳送帶 第二傳送帶 驅動馬達 驅動軸 支撐軸 帶輪 驅動輪 從動輪 第一驅動輪 第一從動輪 第.—驅動輪 第二從動輪 吸附塊 第一吸附塊 第二吸附塊 吸附孔 吸附孔 支流通道 主流通道 第一主流通道 34 2012013142(a) to 2(C) are plan views of several embodiments according to the present invention; 1 H Fig. 3 is a crystal to be detected in the position sensing system of the present invention g 32 201201314 Plan view of the process of transmitting to the front and rear of the detection position; Figures 4(a) and 4(b) are side views of the position sensing system according to the invention; Figure 5 (a) to Figure 5 (c) is a side view of an embodiment of a position sensing system according to the present invention; and Figures 6 (a) through 6 (b) are one of the visual inspection systems according to the present invention Side view of the example. [Main component symbol description] 1 bisector 100 First visual detecting unit 110, 210 Conveyor belt 120 First scanning camera 130 First light source 200 Second visual detecting unit 220 Second scanning camera 230 Second light source 300 Third visual detecting unit 320 Third Scan Camera 330 Third Light Source 500 Vision Detection Unit 1000 Position Sensing System 33 201201314 1100 1100a 1100b 1200 1300a 1300b 1400 1400 (1) 1400 (2) 1400a (1) 1400a (2) 1400b (1) 1400b (2) 1500 1500a 1500b 1510a ' 1510b 1510a' , 1510b ' 1520 1530 1530 (1) Conveyor belt First conveyor belt Second belt drive motor Drive shaft support shaft Pulley drive wheel Follower wheel First drive wheel First driven wheel No. - Drive wheel Second driven wheel adsorption block first adsorption block second adsorption block adsorption hole adsorption hole branch flow channel mainstream channel first mainstream channel 34 201201314
1530 (2) 1540、1540a、1540b 1540 (1) ' 1540 (2) 1540a (1) ' 1540b (1) 1540a (2) ' 1540b (2) 1600a 1600b 1600c 1700a、1700b 2000 2100 2400 (1) ' 2400 (2) 2500 2520 2530 2540a、2540b 2700a 2700b 2800a ' 2800b 2800a (1)' 2800a (2)> W 第二主流通道 吸附部份 吸附部份 吸附部份 吸附部份 第一檢測位置 第二檢測位置 第三檢測位置 雷射感測器 視覺檢測系統 傳送帶 帶輪 吸附塊 支流通道 主流通道 吸附部份 頂捕獲裝置 底捕獲裝置 光源 2800b (1)、2800b (2)光源 晶圓 35 201201314 Θ1、ΘΓ、Θ2、Θ2， 角度 hi ' h2 高度 S 内部空間 d (W) 寬度 <A> 預定部份 d (B) 長度 <A1>、<A2〉 部份 361530 (2) 1540, 1540a, 1540b 1540 (1) ' 1540 (2) 1540a (1) ' 1540b (1) 1540a (2) ' 1540b (2) 1600a 1600b 1600c 1700a, 1700b 2000 2100 2400 (1) ' 2400 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 The third detection position laser sensor visual inspection system conveyor belt pulley adsorption block branch channel mainstream channel adsorption part top capture device bottom capture device light source 2800b (1), 2800b (2) light source wafer 35 201201314 Θ 1, ΘΓ, Θ 2 , Θ 2, angle hi ' h2 height S internal space d (W) width <A> predetermined part d (B) length <A1>, <A2> part 36