TW201146113A - Circuit board and manufacturing method thereof - Google Patents

Circuit board and manufacturing method thereof Download PDF

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Publication number
TW201146113A
TW201146113A TW99137220A TW99137220A TW201146113A TW 201146113 A TW201146113 A TW 201146113A TW 99137220 A TW99137220 A TW 99137220A TW 99137220 A TW99137220 A TW 99137220A TW 201146113 A TW201146113 A TW 201146113A
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TW
Taiwan
Prior art keywords
circuit
film
resin
substrate
circuit board
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Application number
TW99137220A
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Chinese (zh)
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TWI451820B (en
Inventor
Shingo Yoshioka
Hiroaki Fujiwara
Hiromitsu Takashita
Tsuyoshi Takeda
Yuko Konno
Original Assignee
Panasonic Elec Works Co Ltd
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Priority claimed from JP2009251379A external-priority patent/JP5465512B2/en
Priority claimed from JP2009251399A external-priority patent/JP5350184B2/en
Priority claimed from JP2009253503A external-priority patent/JP5432672B2/en
Priority claimed from JP2009253504A external-priority patent/JP2011100798A/en
Priority claimed from JP2009253505A external-priority patent/JP2011100799A/en
Application filed by Panasonic Elec Works Co Ltd filed Critical Panasonic Elec Works Co Ltd
Publication of TW201146113A publication Critical patent/TW201146113A/en
Application granted granted Critical
Publication of TWI451820B publication Critical patent/TWI451820B/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • H05K3/184Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method using masks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/107Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by filling grooves in the support with conductive material
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4661Adding a circuit layer by direct wet plating, e.g. electroless plating; insulating materials adapted therefor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0284Details of three-dimensional rigid printed circuit boards
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/095Conductive through-holes or vias
    • H05K2201/09563Metal filled via
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05Patterning and lithography; Masks; Details of resist
    • H05K2203/0562Details of resist
    • H05K2203/0565Resist used only for applying catalyst, not for plating itself
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections
    • H05K3/425Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern
    • H05K3/426Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern initial plating of through-holes in substrates without metal
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/465Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits by applying an insulating layer having channels for the next circuit layer

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

This invention aims to provide a circuit board wherein highly precise electrical circuit is formed on an insulating base material. First, a resin covering D2 is formed on the surface of an insulating base material D1. Then, by forming recesses with a depth exceeding the thickness of the resin covering D2 taking the outer surface of the resin covering D2 as a basis so as to form circuit grooves D3 having a prescribed shape and depth. Next, plating catalyst or its precursor D5 is covered on the surface of the circuit grooves D3 and the surface of the resin covering D2. Further, the resin covering D2 is peeled off to obtain an insulating base material D1. The circuit board of this invention includes the thus obtained insulating base material D1 and an electroless plating film D6 formed on the circuit grooves by conducting an electroless plating to the insulating base material D1. The ratio of the thickness of the electroless plating film D6 relative to the depth of the circuit grooves D3 is less than 0.5.

Description

201146113 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種電路基板以及該電路基板的製造方法。 【先前技術】 ϋ動電話等攜帶式資訊終端裝置、電腦以及其周邊裝置、各種 資訊,電製品等的電氣裝置快速地朝高度功能化發展。伴隨於此, 對於該等電氣裝置上所搭載之電路基板而言,其電氣電路也被要求 更進一步高密度化。為了滿足該等電氣電路的高密度化的要求,吾 人希求一種能夠正確地形成線寬以及線間隔(相隣電氣電路與電氣 電路之間的部分的寬度)更狹窄的電氣電路配線的方法。在高密度 化^電路配線中,容易發生配線間的短路或遷移等問題。另外,當 堆宜數增加時,在電路形成面上所產生的凹凸就會變大,欲形細 微電路就會變困難。 關於電路基板的製造方法,例如利用減去法或加成法在絶緣基 =形成電氣電路等方法已為人所習知。減去法是將欲在金屬箱堆 ^的表面上縣電氣電路的料(f路職料)以外的金屬 =咸H⑽成電氣電路的方法。另__方面,加成法是在絶緣基 對奴形成電路的部分實施無電解魏,⑽雜定電路的方 姓刻膜厚較厚的金屬箔,在欲形成電氣電路的部分 方、^^殘留金射 1,絲'^其他部分的方法。若利用這個 部分的金屬會·_,增加製造成本。另一方面, 配線。因此’金屬*會被浪費掉,較 看,加成法是較佳的電路形成^b貝源被無^耗。從此點來 參照圖5説明利用習知代表性 “明糊f知的全加成法形成金屬配線的各步驟。 用 201146113 首先,如ffl 5(A)所示的,在形成有穿通孔m〇1白勺 D100的表面上彼覆電錄觸媒D102。另外,絶緣基材m〇 ^面 預先予以粗化。接著,如圖5⑻所示的,在披覆有電_媒測2 的,緣基材D100上形成光阻層D103。接著,如圖5(c)所 隔^形成既定電路圖案的光罩D110對該光阻層D1〇3進行。 接著’如圖5(D)所不的’對、經過曝光的光阻層D1〇3 ίΓ4。然後,如圖5(E)如所示的,實施無電解ϊ電鍵 專的無電解電鑛,在顯影所形成的電路圖案D104的表面以 的内壁面形成金屬配線D1G5。藉由實施上述各步驟,在絶 緣基材D100上形成由金屬配線D1〇5所構成的電路。 在上述的習知加成法中,會在絶緣基材㈣ 覆電鑛觸媒謂2。因此,會產生以下的問題 :光阻層_進行顯影時,便可只在光阻未保護到的^幵U ^ 當未以高精度對光阻層m〇3進行顯料,如圖 本來不欲形成電鍍的部分殘留多餘的電鑛部分 ,緣紐麵_味面上披覆電鍍觸媒賺 務。夕ί的電鑛部分D106會導致隣接電路之間的短路或遷 電ίίί; ίΐ路il移問題,在形成線寬以及線間隔較狹窄的 的入Λ 易發生。另外,圖6係示意剖面圖’用來說明利用習知 勺王加成法所形成的電路的輪廓形狀。 如糞卜i關於與上述電路基板製造方法不同的製造方法,可舉例 專=文獻1以及專利文獻2所記載的製造方法等。 ,利文獻1揭示以下另一種加成法。 光性緣紐)上形献備輔可雜的第1感 月曰層與具備鹼可溶性的第2感紐 i第^光性樹脂層隔著具備既定電__‘= ί Ξ含接著二 鑛在觸鱗麵部分上正確_路。 ^無電解電 201146113 另外,專利文獻2揭示以下的方法。 —首先,在絶緣基板(絶緣基材)上塗佈樹脂保護膜(第丨步驟)。. 接著’在,塗佈有該保護膜的絶緣基板上利用機械加工或雷射光束的、 照射以單獨或同時描繪的方式形成對應配線圖案的溝槽以及穿通 孔(第2步驟)。接著,在該絶緣基板整個表面上升 步驟)。接著,剝離該保護膜並除去該絶緣基板上的活性化層(而第在 溝槽以及穿通孔的内壁面上殘留活性化層(第4步驟)。接著,在該 絶緣基板上實施魏用魏保麵的魏以選擇性地在該經過活 性化的溝槽以及穿通孔的内壁面上形成導電層(第5 [習知技術文獻] [專利文獻] [專利文獻1]日本特開昭57 —134996號公報 [專利文獻2]日本特開昭58—186994號公報 【發明内容】 [發明所欲解決的問題] 然而,若根據日本特開昭57—134996號公報 1形成溶劑溶解性不_2種感光性樹脂層,另外°,|顯與時也 = =====之後必須:溶 佈二: =f案對保護膜以及絶緣基板進行切削加工,制溶劑 昭號公= 硬化= = 膜的熱 Ϊ良好的耐溶劑性,故單靠溶劑難以除去。二的JJi匕性樹脂具 月曰與樹脂基材的密合性太高,故欲使樹 了二硬化性樹_ 碎片殘留’而能夠正確地將保護膜除去,^ 6 201146113 _媒也會強包::皮5基材表面的電 散到侧:ϋ 朋裂’保護膜中的電鑛觸媒會再次分 ,是再次分散到溶劑中的電鍍觸媒,若再次 成高精==的本電 :路基_製造方法,其胁錢縣耻 [解決問題之技術手段] 膜,包^在表面上形成樹脂覆 ίϊ#^;ϊ^ ί Ϊ:ί5 ϊίί 的f度相對於該電路溝槽的深度在G.5以下。 覆膜t ,以下處理的絶緣基材:在形成樹脂 脂覆膜保nH带專形成具備既定圖案的電路溝槽,在以該樹 以及該樹脂覆,電路溝槽的表面 ==形成電 實施無.魏:7藉ί_絶緣基材 位上,在欲形成電鑛膜之 鑛觸媒或其前驅物所殘留之部 解電鑛膜,藉此構成電氣ΐς抑在該電路溝槽上,形成無電 板。m錢絲材上軸高精紅魏電路的電路基 亦即,德所域之電路的輪廓轉高精度㈣路基板。結果, 201146113 開間隔形成複數·的情況下,也能夠防止在電 Π留無電觸麵的碎Μ #,藉雜止短路錢移 生。另外,亦可形成具備所期望之深度的電路。 於ϊ無電解電賴的厚度,如上所述的,相對於該電 二、'木又而s比較小’故因為該無電解電鍍膜而從電路形成面 二出^凸料絲成,即使堆疊數增加,電路形成酬產生之凹凸 也比較小,比較容易形成細微電路。 路的據該獅亦可製得在絶緣基材上形成高精度之電氣電 ^外’該電鍍膜的厚度相對於該電路溝槽的深度宜在〇25以 根據該構造,便可製得能夠防止在絶緣基材上產生缺陷並形 成更南精度之電氣電路的電路基板。 另外,該電鍵膜的厚度宜為〇。若根據該構造 ,便可 I付在、、、色緣基材上形成更高精度之電氣電路的電路基板。 另外,該f路溝槽的深度宜為卜細。若根據該構造,便可 裏得在絶緣基材上形成更高精度之電氣電路的電路基板。 另外,本發明的其中一個態樣之電路基板的製造方法包含:在 、、’色緣基材表面上开>成樹脂覆膜的覆膜形成步驟;以該樹脂覆膜的外 ,面為基挪成具備超職麟繼之厚度的深度的凹部,藉此在 该絶緣基材上形成具備所期望的形狀以及深度的電路溝槽的電路 溝槽形成步,;對該電路溝槽的表面以及該樹脂覆膜的表面披覆電 鍍觸媒或其前驅物的觸媒披覆步驟;從該絶緣基材將該樹覆 去的覆膜除去步驟;以及對已除去該樹脂覆_絶緣基材實施無^ 解電鍍/形成無電解電鍍膜的電鍍處理步驟;在該電鍍處理步驟 中’以該無電解電鍍膜的厚度相對於該電路溝槽的深度在0.5以下 的方式形成無電解電鍍膜。 根據该等製造方法,在絶緣基材上形成樹脂覆膜之後,用雷射 加工等形成具備既定圖案的電路溝槽,在以該樹脂覆膜保護不欲形 成電鍍膜之部分的狀態下,對該電路溝槽的表面以及該樹脂覆膜的 表面披覆電錢觸媒或其前驅物。之後,從該絶緣基材將該樹脂覆膜 8 201146113 .便能夠比較容易地在欲形成電鑛膜的部分上殘留· H由、^其他部分的電鍍觸媒或其前驅物除去。因又 、也在_比較容易 可將易在絶緣基材上形成高精度的電氣電路。亦即, 定的輪廓維持在高精度。結果,即使在例如隔著既 況下,也能夠防止電路之間殘留無電解電 路溝無電解電鑛膜的厚度,如上所述的’相對於該電 之小;故因為該無電解電賴而從電路形成面突出 較小,加,在_彡成輯赶之凹凸 於該ί:溝中:;以?無電解電賴的厚度相對 損的發生,且料錢緣基材上形成更高精 絲f 1卜日1?覆_去步驟’宜為用既定液體使該樹脂覆膜膨潤之 樹脂覆膜的一部分溶解之後,從該絶緣基材 ϊΐϋίϊΐ的步驟。若根據該等製造方法,便較易從該絶緣 離。因此,更易在絶緣基材上形成高精度的電 氣電路。 —另外,該勵旨賊對該·的細度宜在观以上。藉由使用 :广’ίΐ的樹脂覆膜,便較易從該絶緣基材將該樹脂覆膜剝離。 匕I’更易在絶緣基材上形成高精度的電氣電路。另外,關於該樹 月曰復膜’亦产含對練翻綱度較大,倾練體溶解者。 另外’該觸媒彼覆步驟宜具備在酸性觸媒金屬雜溶液中進行 f的步,’在錢膜除去步驟中的既定液體宜為驗性溶液,該樹 月曰復麟鎌性卿金屬職鎌鱗潤度絲S戮,對該驗性 201146113 溶液的膨潤度宜在50%以上。 妯增根據該等製造方法’該樹脂覆膜在用酸性條件進行處理的觸媒- f驟中不易剝離,在該觸媒披覆步驟之後的用鹼性溶液進行處. ^、设膜除去步驟中較易剝離。因此,該樹脂覆膜可選擇性地在該 =膜除去步射被獅。因此,可在麟驢步驟巾正確地保護不 =成無電解電艘膜的部分’並在電鍍觸媒或其前驅物披覆之後的 覆膜除去步驟巾輕易將旨覆關離。因此,能夠更正確地形成電 路。 从丰ίΛ,該覆膜除去步驟宜為用既定液體將該樹脂覆膜溶解除去 。右根據該等製造方法,便可輕易從該絶緣基材將該樹脂覆 、矛、因此,更谷易在絶緣基材上形成高精度的電氣電路。 另外’該樹脂覆膜宜為在該絶緣基材表面上塗佈彈性體 材上====形成樹脂覆膜。因此’更易在絶緣基 料覆膜爲綱彡成在支縣板上物旨覆膜轉印到 ίί ί ίΛ 成的樹脂覆膜。另外,該轉印所使用的樹脂 ==的樹脂覆膜。若使用該等樹脂覆膜,== 準備很夕树知覆膜,有益於量產,是較佳的選擇。 。。另外’該彈性體宜為從由具有羧基的二烯系彈性體、丙 =性體以及聚醋系、彈性體所構成的群組中選出者。另 檢条、 ,性,更宜為苯乙稀-丁二烯系共聚物。根據該體^可* 更大,較易職會被雜體溶解的樹脂_。度 另外,該樹月旨覆膜亦宜使用以由酸當量刚 的丙烯酸系樹脂所構成的樹脂為主成分的覆膜。的”有羧基 另外,該樹脂覆膜宜為由將⑷在分子中 飽和基的缓酸或酸酐的至少丨種以上的單體“、(以= 201146113 -ίΐΐί少1種以上的單體聚合所得到㈣合物樹脂或包含該聚 】樹脂組成物所構成者。若使用該等樹脂覆臈,便可輕易 ‘=緣基材絲上形成樹脂_。藉此,更易在絶緣基材上 另外’該等樹脂覆膜多可被該覆膜除去步驟S =液體溶解,除了被剝離除去之外,亦可有效用於被溶解=去= 2 ’在賴脂_巾’該聚合物細旨的酸#量宜為⑽〜議。 成細=路該樹脂覆膜的厚度宜在10哗以下,有利於以高精度形 成需寬度在2 一以下的部分’有利於形 牛驟另電巧i槽形成步驟宜為利用雷射加工形成電路溝槽的 :==,故為較佳的選擇。另外,利用雷射加工3开= 連接用的 '通孔’並錢緣基材内埋人電容。 曰 2外,該電路溝槽形成步驟宜為使用壓型 驟,藉由壓印成型比較容易形成電路溝槽,是較佳^^冓槽的步 绫其路溝槽形成步驟中,宜在電路溝槽形成時於該絶 、^基材上形成貝職。若根據該造方法 辨 介概或时層⑽貫舰。 队孔貫知無電解電鑛,以形成介層孔或内介層孔。 另外’該絶緣基材具有形成高低差狀之高 ;較佳的態樣。亦即,該絶緣基二= 理觸媒披覆步驟、該覆膜除去步驟以及該電錢ί _ 佳的態樣。若根據該等製造方法,便可“ .去步ίί後更ΐ用包該樹脂覆膜含有營光性物質,在該覆膜除 乂驟之後_该螢光性物質的發光以檢查覆膜除去不良情況的 11 201146113 脂覆膜未完全除去,而殘留少,的間’本來應除去的樹 溝槽時所除去讀織_制掉;^卜之路 當電路溝槽之間雜脂覆膜殘 不電=;留有樹脂覆膜的碎片時也=氣電 源,传右覆步驟之後’對覆膜除去面照射既定發光 ί_ _咖錢紐㈣崎光,便可檢查Ϊ 有…後臈除去瑕疵或覆膜除去瑕疵的位置。 一 造方明的另一態樣之電路基板,係利用該電路基板的製 精度之魏輸,㈣得錢_上形成高 [對照先前技術之功效] 電路的種在絶緣基材上形成高精度之電氣 之雷痛雷攸二带卜’更提供一種較易在絶緣基材上形成高精度 形成之雷㈣的製造^法。亦即,能夠將無電解電鑛膜所 分以外二八卜維持在高精度。藉此,可防止在電路形成部 或遷移等問i的it餘的無電解電鑛膜的碎片等,藉此防止短路 【實施方式】 實轉樣,惟本發明並非以此為限。 樹月匕ΐϊΐίΐ之電路基板’觸:在表面上形成樹脂覆膜,以該 的二n的外表面為基準形成具有超過賴脂覆膜之厚度的深度 路、、盖is主糟此形成具備所期望之形狀以及深度的電路溝槽,在該電 物,面上以及5亥樹脂覆膜的表面上彼覆電鍍觸媒或其前驅 卜1隹该樹脂覆膜所形成的絶緣基材;以及對該絶緣基材實施無- 201146113 在該電路溝槽上的無電解電鑛膜;該無電解電鑛膜 的尽度相對於該電路溝的深度在0 5以下。 卿本發明第1-1實施態樣之電路基板的製造方法。 方法包含:在絶緣基材表面上形成樹脂覆膜的覆 _覆膜的外表面為基準形成具有超過該樹脂覆 狀以的凹部,藉此在該絶緣基材上形成具備所期望之形 ^乂及冰度的電路溝槽的電路溝槽形成步驟;在該電路溝槽的表面 ^及?喊社彼㈣賴賊其前㈣_媒彼覆 ,攸<^,、、色緣基材除去該樹脂覆膜的覆膜除去步驟;已除去哕 的施無電職鍍,以形成無電解電鍍膜的電: 步驟中,_無電解電賴的厚度相對於 "電路溝槽的沐度在〇.5以下的方式形成無電解電錢膜。 圖J先發明第1_1實施態樣之電路基板的製造方法。 圖’用來說明第卜1實施態樣之電路基板的製造 f先,如圖1(A)所示的,在絶緣基材D1的表面上形 膜D2。―另外,該步驟相當於覆膜形成步驟。 接著如圖1(B)戶斤示的,以該樹脂覆膜的外表面為芙準 ΐΐΓϊ樹脂覆膜D2之厚度以上的深度的電路溝槽D3。另外,ί 二要’在該絶緣基材D1上打孔,形成貫通孔D4,作為該電 溝槽D3的-部份。另外,藉由該電路溝槽D3 =電=成無電解電鑛_部分,亦即,形·氣電路 外,該步驟相當於電路溝槽形成步驟。 另 ,著1(Q所示的’顧賴D3 成該電路溝槽D3的該樹脂霜膜沾本品η士费+ 乂及禾心 驅體巧。另外,離賴電簡媒或其前 」Y更了,、在5亥絶緣基材D1的形成有該電路 分的表面上殘留電_媒或其前,物D5。另—方面日= 脂覆膜m喊面上的麵觸或其前驅㈣,會在載胁m 201146113 之上的狀態下,與該樹脂覆膜D2 一併被降麥。s认 步驟相當於覆膜除去步驟。 开被除去另外,該 接著’對已除去該樹脂覆膜D2的絶缘美 Ϊ鍍Ϊ^存該電鍍觸媒或其前驅物^的部分上 分上,mi / ’如圖_所示的,在形成該電路溝槽m ί邱 $化成無電解電錢膜作為電氣電路 滿電鑛),以更近一步增加膜厚。具 膜06即可。亦即’以該無電解電二=以,5 3 US在〇.5以下的方式形成無電解電鍍膜〇6;可: 。Ο ί /Λ電鑛膜D6的厚度相對於該電路溝槽D3的深 二在0.25以上的方式形成無電解電賴D6。亦即 = ϊϊϊΐϋ厚βΓΓΪ路溝槽D3的深度在G.25以上的^形^ …、電解,舰D6。另外,該步驟相當於電鑛處理步驟。珉 6 各步驟’形成如圖1(Ε)所示㈣路基板⑽。如是來 七電路基板⑽,在該絶緣基材以上以高精度形成該 在上述的電路基板的製造方法中,該電路溝㈣ (電氣電路)D6的形狀和大小,如以下所述。圖2 溝槽形成步驟之後與魏鍍處理步驟之後的 :月圖:另外▲’轉)係表示該電路溝槽形成步驟之: 2(B)係表示该電鑛處理步驟之後的狀態。 〜、圖 首先,該電路溝槽D3的形狀並無二特舰心具體而言 路的長邊方向的垂直剖面,可為矩形,亦可為 的剖面積而言配、_顯長度較長,可降 率信號的傳播損失,故為較佳的選擇。 貝夭特別疋呵頻 另外’該無電解電軸D6的厚度τ D3 , ίΐ 14 201146113 而言,只要是Τ/D在0.5以下的厚度g 另外,就該無電解電賴D6的厚度 ’其他並無特別限定。 上。 又丄而s ’其T/D宜在0.25以 當該無電解電鍵膜D6的厚度τ太壤吐 阻會有增大_肖。糾,當該無贿麵電 號的傳播損失的優勢會有降低的傾向_疋此夠降低兩頻率信 1XT/當電的厚度T麵於該電路溝⑽3的深声 d(t/d)太小^ ’電氣電路(配線)的電阻會增大, =j 致斷路問題的危險性會紐高的傾向。另外,^ 素導 前所述的’能夠降低傳播損失的優勢,特別是“二 ^ 的傳播損失的優勢會有降低的触。 I w頻羊L就 另外,該無電解電鍍膜D6的具體厚度τ,會因為 D3的深度D而有差異,惟宜在例如〇1〜1〇μιη :因為°亥電路溝槽 另外,該電路賴D3的深度D只要滿足上述 可,其他並無制限定,具體而言宜在例如^5μ/的關係即 另外’該電路溝槽D3以及該無電解電鑛膜(f氣電路)D6的大 小,具體而言,例如,當該無電解電鍍膜D6的具體厚度τ為5 時《亥电路溝槽D3的珠度D為20μιη或1〇μιη。此時t/d為〇 25 或 0.5 。 ‘ . 另外,5亥電路溝槽D3以及該無電解電鑛膜(電氣電路)的大 小,例如,可用SEM(scanning electron microscope,掃描式電子顯 微鏡)觀察相對於該電路溝槽D3的長邊方向的垂直剖面而測得/ 以下,説明本實施態樣的各構成要件。 <覆膜形成步驟> 覆膜形成步驟,如上所述’係在絶緣基材D1的表面上形成樹 脂覆膜D2的步驟。 (絶緣基材) 在該覆膜形成步驟中所使用的絶緣基材D1,只要是可用來製 造電路基板者即可,其他並無特別限定。具體而言,例如,包含樹 201146113 脂的樹脂基材等。 該樹脂基材,可採用電路基板,例如,可 路基 j無特別限定。關於有機基板的具體範例,例 路基板的由環氧樹脂、丙稀酸樹脂、聚碳酸 蛊^匕亞T月曰、聚本硫驗樹脂、聚苯峻樹脂、吏醋樹脂、 、雙馬來麵職料樹脂所構成的基板。201146113 VI. Description of the Invention: [Technical Field] The present invention relates to a circuit board and a method of manufacturing the same. [Prior Art] Electrical devices such as portable information terminal devices such as mobile phones, computers and peripheral devices thereof, various information, and electrical products are rapidly becoming highly functionalized. Along with this, the circuit board mounted on these electric devices is required to further increase the density of the electric circuit. In order to meet the demand for higher density of such electric circuits, it has been desired to provide a method for accurately forming an electric circuit wiring having a narrower line width and a line interval (the width of a portion between adjacent electric circuits and electric circuits). In the high-density circuit wiring, problems such as short-circuiting or migration between wirings are likely to occur. Further, when the number of stacks is increased, the unevenness generated on the circuit forming surface becomes large, and it becomes difficult to form a fine circuit. As a method of manufacturing a circuit board, for example, a method of subtracting a method or an additive method for forming an electric circuit in an insulating base has been known. The subtraction method is a method in which a metal other than the material (f road material) of the county electric circuit (salt H) is to be an electric circuit on the surface of the metal box. On the other hand, the additive method is to implement electroless Wei in the part of the insulating base-to-slave circuit, and (10) the metal film with a thick film thickness of the square circuit, in the part where the electric circuit is to be formed, ^^ Residual gold shot 1, silk '^ other parts of the method. If you use this part of the metal, you will increase the manufacturing cost. On the other hand, wiring. Therefore, the 'metal* will be wasted. In comparison, the addition method is a better circuit formation. From this point, each step of forming a metal wiring by a conventionally known "full-addition method" will be described with reference to Fig. 5. First, with 201146113, first, as shown by ffl 5 (A), a through-hole m is formed. 1) The surface of the D100 is covered with an electric recording medium D102. In addition, the surface of the insulating substrate is roughened in advance, and then, as shown in Fig. 5 (8), the edge of the dielectric layer 2 is covered. A photoresist layer D103 is formed on the substrate D100. Then, the photomask D110 which forms a predetermined circuit pattern as shown in FIG. 5(c) is applied to the photoresist layer D1〇3. Next, as shown in FIG. 5(D). 'Yes, the exposed photoresist layer D1〇3 Γ4. Then, as shown in FIG. 5(E), an electroless ore-free electroless ore is applied to the surface of the circuit pattern D104 formed by the development. The metal wiring D1G5 is formed on the inner wall surface. By performing the above steps, a circuit composed of the metal wiring D1〇5 is formed on the insulating base material D100. In the above conventional additive method, the insulating substrate (4) is covered. The electro-mineral catalyst is called 2. Therefore, the following problem occurs: when the photoresist layer is developed, it can be only protected by the photoresist.幵U ^ When the photoresist layer m〇3 is not made with high precision, as shown in the figure, it is not necessary to form part of the electroplated part of the residual electro-mineral part, and the edge-faced surface is covered with electroplating catalyst. The electric power part D106 of the ίί will cause a short circuit or an erection between adjacent circuits, which is easy to occur in the formation of a line width and a narrow line spacing. In addition, Fig. 6 is a schematic sectional view. 'The outline shape of the circuit formed by the conventional method of the method of the method of manufacturing the circuit board, for example, the manufacturing method described in the document 1 and the patent document 2, etc. Lili Literature 1 discloses the following additional addition method: The first layer of the lunar layer provided with the auxiliary miscellaneous and the second layer of the photosensitive resin layer having the alkali solubility It has a predetermined electric quantity __'= ί Ξ 接着 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Coating a resin protective film (step )).. a groove and a through hole corresponding to the wiring pattern are formed on the insulating substrate coated with the protective film by mechanical processing or laser beam irradiation, either separately or simultaneously (second step). Next, the insulating substrate is formed on the insulating substrate. Then, the entire surface is lifted up. Then, the protective film is peeled off and the active layer on the insulating substrate is removed (the active layer is left on the inner wall surface of the trench and the through via (step 4). Then, the insulating layer On the substrate, Wei is used to form a conductive layer on the inner wall surface of the activated groove and the through hole (5) [Patent Document] [Patent Document 1] [Patent Document 2] JP-A-58-186994 [Patent Document 2] [Problem to be Solved by the Invention] However, it is formed according to Japanese Laid-Open Patent Publication No. SHO 57-134996 Solvent solubility is not 2 kinds of photosensitive resin layer, and °, | display and time = ===== must be: dissolution 2: = f case on the protective film and insulating substrate cutting, solvent demonstration Male = hardened = = membrane Ϊ good solvent resistance, it is difficult to remove the solvent alone. The second JJi inert resin has a high adhesion to the resin substrate, so that the tree can be removed from the two hardening trees _ debris residue, and the protective film can be removed correctly. Package:: The surface of the skin of the skin 5 is scattered to the side: ϋ The crack of the electro-mineral catalyst in the protective film will be divided again, and it is the electroplating catalyst that is dispersed again in the solvent. If it is again high-precision == Electricity: Subgrade _ manufacturing method, its threatening county shame [technical means to solve the problem] film, package ^ formed on the surface of the resin coating ^ ^ ^ ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί The depth is below G.5. The coating film t, the insulating substrate treated as follows: a circuit groove having a predetermined pattern is formed in the resin resin film-preserving layer, and the surface of the circuit trench is formed by the tree and the resin. Wei: 7 borrowed from the insulating substrate to decompose the ore film in the part of the mineral catalyst or its precursor that is intended to form an electric ore film, thereby forming an electrical depression on the trench of the circuit. No electricity board. The circuit base of the high-precision red Wei circuit on the m-wire wire, that is, the contour of the circuit of the German domain is turned to a high-precision (four) circuit substrate. As a result, in the case where the opening interval is formed in the 201146113, it is also possible to prevent the breakage of the electric contact surface in the electric power, and to prevent the short-circuit money from being transferred. In addition, a circuit having a desired depth can also be formed. The thickness of the electroless electrolysis, as described above, is relatively small with respect to the electric two, 'wood and s', so that the electroless plating film is formed from the circuit forming surface, and the convex wire is formed even if stacked As the number increases, the bumps generated by the circuit formation are also relatively small, and it is easier to form a fine circuit. According to the structure, the lion can also be made to form a high-precision electrical circuit on the insulating substrate. The thickness of the plating film is preferably 〇25 with respect to the groove of the circuit. A circuit substrate that prevents defects from being formed on an insulating substrate and forms an electrical circuit of a more southern precision. Further, the thickness of the electrode film is preferably 〇. According to this configuration, it is possible to provide a circuit board in which a higher-precision electrical circuit is formed on the substrate. In addition, the depth of the f-channel is preferably thin. According to this configuration, a circuit board in which an electric circuit of higher precision is formed on the insulating base material can be obtained. Further, a method of manufacturing a circuit board according to one aspect of the present invention includes: a step of forming a film on a surface of a color edge substrate; a film forming step of forming a resin film; and an outer surface of the resin film a base groove forming step having a depth of the thickness of the overbearing lining, thereby forming a circuit trench forming step having a desired shape and depth of the circuit trench on the insulating substrate; the surface of the circuit trench And a catalyst coating step of coating the surface of the resin coating with a plating catalyst or a precursor thereof; a step of removing the coating from the insulating substrate; and removing the resin coating from the insulating substrate A plating treatment step of performing electroless plating/formation of an electroless plating film is performed; in the plating treatment step, an electroless plating film is formed in such a manner that the thickness of the electroless plating film is 0.5 or less with respect to the depth of the circuit trench. According to the manufacturing method, after the resin film is formed on the insulating base material, a circuit groove having a predetermined pattern is formed by laser processing or the like, and in a state where the portion where the plating film is not desired to be formed is protected by the resin film, The surface of the circuit trench and the surface of the resin film are covered with an electric money catalyst or a precursor thereof. Thereafter, the resin coating film 8 201146113 from the insulating substrate can be relatively easily removed from the portion where the electrodeposited film is to be formed, and the other portion of the plating catalyst or its precursor is removed. It is also easy to form a high-precision electrical circuit on an insulating substrate. That is, the fixed contour is maintained at a high precision. As a result, it is possible to prevent the thickness of the electroless circuit trench electroless ore film from remaining between the circuits, for example, as described above, which is 'relative to the electric power as described above; From the circuit forming surface, the protrusion is small, and the 凹凸 彡 辑 于 于 于 于 该 : 沟 沟 沟 沟 沟 沟 沟 沟 沟 沟 沟 沟 沟 沟 沟 沟 沟 沟 沟 沟 沟 沟 沟 沟 沟 沟 沟 沟 沟 沟 沟The wire f 1 卜 1 1 覆 _ 退 step ' is preferably a step of dissolving a part of the resin film which swells the resin film with a predetermined liquid, and then squeezing from the insulating substrate. According to these manufacturing methods, it is easier to separate from the insulation. Therefore, it is easier to form a high-precision electric circuit on the insulating substrate. - In addition, the fineness of the thief should be above. By using a wide resin film, the resin film can be easily peeled off from the insulating substrate.匕I' makes it easier to form high-precision electrical circuits on insulating substrates. In addition, regarding the tree, the ruthenium film is also produced with a large degree of practice and the body is dissolved. In addition, the catalyst contacting step should preferably have the step of f in the acidic catalyst metal mixed solution, and the predetermined liquid in the money film removing step is preferably an experimental solution, and the tree 曰 曰 镰 镰 镰 镰 卿 卿 金属 金属The scale of the sputum is S, and the swelling degree of the test 201146113 solution is preferably 50% or more. According to the manufacturing method, the resin coating film is not easily peeled off in the catalyst-f which is treated under acidic conditions, and is carried out with an alkaline solution after the catalyst coating step. It is easier to peel off. Therefore, the resin film can be selectively irradiated by the lion at the = film removal step. Therefore, it is possible to easily protect the portion of the film from the electroless island film after the coating of the electroless plating film and the coating removal step after the plating catalyst or its precursor is coated. Therefore, the circuit can be formed more correctly. The film removal step is preferably such that the resin film is dissolved and removed by a predetermined liquid. According to these manufacturing methods, the resin can be easily coated with the resin from the insulating substrate, and therefore, it is easy to form a high-precision electrical circuit on the insulating substrate. Further, it is preferable that the resin coating film is coated with an elastic material on the surface of the insulating base material ==== to form a resin coating film. Therefore, it is easier to transfer the film to the LY ί ί 在 在 在 在 在 在 在 在 在 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Further, a resin film of the resin == used for the transfer. If these resin coatings are used, it is a better choice to prepare the coatings for the sake of mass production. . . Further, the elastomer is preferably selected from the group consisting of a diene elastomer having a carboxyl group, a propionate body, a polyacetate system, and an elastomer. In addition, it is more suitable to be a styrene-butadiene copolymer. According to the body ^ can be * larger, more difficult to be dissolved by the resin _. In addition, it is preferable to use a film containing a resin composed of an acid resin equivalent to an acrylic resin as a main component. In addition, it is preferable that the resin film is a monomer which is at least one kind of a slow acid or an acid anhydride which satisfies (4) a saturated group in a molecule, and (a compound polymerization of one or more types is reduced by = 201146113 - ΐΐ) A (tetra) compound resin or a composition comprising the poly] resin composition is obtained. If the resin is coated with the resin, the resin can be easily formed on the edge of the base material. Thereby, it is easier to additionally on the insulating substrate. The resin coating film can be mostly dissolved by the film removal step S = liquid, and can be effectively used for being dissolved = = 2 'in the lyophile _ towel' #量宜为(10)~议. The thickness of the resin film should be less than 10哗, which is beneficial to form a part with a width of 2 or less with high precision. The step is preferably to use laser processing to form the circuit trench: ==, so it is a better choice. In addition, laser processing 3 open = connection 'through hole' and buried capacitor in the edge of the substrate. 2, the circuit trench forming step is preferably to use a press step, which is relatively easy to shape by imprinting The circuit trench is a step of forming a trench, and the trench forming step is preferably formed on the substrate when the trench is formed. If the method is used according to the method, The time layer (10) is a ship. The team hole knows the electroless ore to form the interlayer hole or the inner layer hole. In addition, the insulating substrate has a high height difference; preferably, the insulating layer 2 = the catalyst overcoating step, the film removing step, and the mode of the electric money ί _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ In the case of the photoreceptor, the luminescence of the fluorescent material is checked to check for the removal of the film. 11 201146113 The lipid film is not completely removed, and there is little residue. When the groove is removed, the read weave is removed; the path of the ^b is not charged when the circuit is grooved; the residue of the resin film is also = gas power, after the right cover step Remove the surface illumination of the given illuminate ί_ _ 咖钱纽 (4) Saki, you can check Ϊ ... 臈 臈 臈 瑕疵 覆 覆The position of the 瑕疵 。 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 另一 另一 另一 另一 另一 另一 另一 另一 另一 另一 另一 另一 另一 另一 另一 另一 另一 另一 另一 另一 另一The high-precision electric lightning thunder and thunder two-band b' provides a manufacturing method that is easy to form a high-precision lightning (4) on an insulating substrate. That is, it can be separated from the electroless ore film. The high-precision is maintained at a high level of accuracy, thereby preventing the occurrence of short-circuiting of the electroless ore film remaining in the circuit forming portion or the migration, thereby preventing the short-circuit [embodiment], but the present invention It is not limited to this. The circuit board of the tree ' ΐ ' 触 触 : : : : : 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路The main mold forms a circuit trench having a desired shape and depth, and is formed on the surface of the electric material, the surface of the film, and the surface of the 5 resin film by a plating catalyst or a precursor thereof. Insulating substrate; and the insulating substrate No application --201,146,113 electroless mineral film on the circuit trench; with respect to the best of mines electroless film in groove depth of the circuit 05 or less. A method of manufacturing a circuit board according to a 1-1st aspect of the invention. The method includes forming a concave portion having a resin coating over the outer surface of the coating film on the surface of the insulating substrate, thereby forming a desired shape on the insulating substrate. And the circuit trench forming step of the circuit trench of the ice; the surface of the trench of the circuit and the shattering of the thief (4) _ _ _ _ _ _ 、 、 、 、 、 、 、 、 、 The film removal step of the resin film; the electroless plating of the ruthenium has been removed to form an electroless plating film: in the step, the thickness of the electroless galvanic sheet is relative to the width of the circuit trench. The method of .5 or less forms an electroless money film. Fig. J shows a method of manufacturing a circuit board according to a first embodiment of the invention. Fig. 1 is a view showing the manufacture of the circuit board of the first embodiment. First, as shown in Fig. 1(A), a film D2 is formed on the surface of the insulating base material D1. ― In addition, this step corresponds to a film forming step. Next, as shown in Fig. 1(B), the outer surface of the resin film is a circuit trench D3 having a depth equal to or greater than the thickness of the resin film D2. Further, the insulating substrate D1 is perforated to form a through hole D4 as a portion of the dielectric groove D3. Further, this step corresponds to the circuit trench forming step by the circuit trench D3 = electric = electroless ore portion, i.e., the gas circuit. In addition, the 1 (Q shown in the 'Dream D3 into the circuit groove D3 of the resin cream film dipped in this product 士士费 + 乂 and Hexin drive body. In addition, away from the electricity or its former" Y is further, and the surface of the circuit board D1 is formed with the electric circuit or the front of the material D5. The other side is the surface contact of the grease film m or its precursor. (4) The film is removed together with the resin film D2 in a state above the load m 201146113. The step of recognizing corresponds to the film removing step. The opening is removed, and the subsequent 'removal of the resin is removed. The insulating enamel of the film D2 is deposited on the portion of the plating catalyst or its precursor ^, and the mi / ' as shown in the figure _ is formed in the circuit trench m 邱The money film acts as an electrical circuit full of electricity, to increase the film thickness further. With film 06 can be. That is, the electroless plating film 〇6 is formed in such a manner that the electroless electricity is equal to or less than 5 3 US is less than or equal to 5; The thickness of the Ο ί / Λ 矿 D D6 is formed to be an electroless ray D6 with respect to the depth of the circuit trench D3 being 0.25 or more. That is, the thickness of the thick β-channel groove D3 is above the G.25, the electrolysis, and the ship D6. In addition, this step is equivalent to the electric ore processing step.珉 6 Each step' forms a (four) way substrate (10) as shown in Fig. 1 (Ε). In the above-described circuit board manufacturing method, the shape and size of the circuit trench (4) (electrical circuit) D6 are as follows, in the case where the circuit board (10) is formed with high precision. Fig. 2 After the trench forming step and after the Wei plating treatment step: the moon pattern: another ▲' turn) indicates the circuit trench forming step: 2 (B) indicates the state after the electric ore processing step. First, the shape of the circuit trench D3 is not a two-dimensional ship, specifically, the vertical section of the long-side direction of the road, which may be a rectangle, or a sectional area, and a longer length. It is a better choice for the loss of propagation of the rate signal. In addition, the thickness of the electroless electric axis D6 is τ D3, ίΐ 14 201146113, as long as the thickness g/D is 0.5 or less, the thickness of the electroless D6 is different. There is no special limit. on. Further, s' has a T/D of 0.25. When the thickness τ of the electroless bond film D6 is too large, the oxidizing resistance is increased. Correction, when the advantage of the transmission loss of the non-bribe surface number will have a tendency to decrease _ 疋 this enough to reduce the two frequency letter 1XT / when the thickness of the T surface is too small in the deep d(t / d) of the circuit groove (10) 3 ^ 'The electrical resistance of the electrical circuit (wiring) will increase, and the risk of the open circuit problem will be high. In addition, the advantages described above can reduce the propagation loss, especially the advantage of "the transmission loss of the two ^ will have a reduced touch. I w frequency sheep L in addition, the specific thickness of the electroless plating film D6 τ, there will be a difference due to the depth D of D3, but it is preferably, for example, 〇1~1〇μιη: because of the °H circuit trench, the depth D of the circuit depends on the above, but the other is not limited, specifically Preferably, for example, a relationship of ^5 μ/, that is, another 'the circuit trench D3 and the size of the electroless ore film (f gas circuit) D6, specifically, for example, when the specific thickness τ of the electroless plated film D6 When it is 5, the pitch D of the trench D3 of the circuit is 20 μm or 1 〇 μιη. At this time, t/d is 〇25 or 0.5. In addition, the 5 kel circuit trench D3 and the electroless ion film (electrical The size of the circuit is measured by, for example, a vertical cross section in the longitudinal direction of the circuit trench D3 by an SEM (scanning electron microscope), and the respective components of the present embodiment will be described. <Laminating film forming step> Film forming step, such as The above-described step of forming the resin film D2 on the surface of the insulating substrate D1. (Insulating substrate) The insulating substrate D1 used in the film forming step is as long as it can be used to manufacture a circuit substrate. Specifically, for example, a resin substrate including a tree 201146113 grease, etc. The circuit substrate may be a circuit board, and for example, the road base j is not particularly limited. Regarding a specific example of the organic substrate, The circuit substrate is composed of epoxy resin, acrylic resin, polycarbonate T 匕 T T, 聚 硫 验 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂Substrate.

射絲觀電職㈣有機基板 I 制限定。具體而言,例如:雙紛A iiSL 型環氧樹脂、雙紛s型環氧樹脂、芳絲環氧 f "^!^性的上述環氧樹脂、含氮樹脂、含__等。另 二旨===:’可單獨使用上述各環氧樹脂以及 iiit其ΐ氧樹脂、棘戊二烯型環氧樹脂、苯_與具 ί!,:脂環族環氧樹脂等。再者,為了賦怎i二; 會 射ίί ’當用上述各樹脂構成基材時,一般而言,為了硬化, 八他並…、特別限疋。具體而言,例如:二氰二脸、rsv =匕劑,例如:祕型、芳烧型、_型等硬化劑 = 賦:阻燃性可使用例如經過德的苯酚樹脂或是經過 ^卜’雖然並無特別限定’惟由於係利用雷射加工形 月:’使用對_〜4GGnm波長範圍的雷射光的吸收率良好的谢 月曰。具體而言,例如聚醯亞胺樹脂等。 的树 也早另緣基材(絶緣層)亦可含有填料。該填料可為盔機饩 粒子,亦可為有機微粒子,並無特別限定。若含 :機铽 加工部填料會露出,填料的凹凸可提高電難樹脂之間的i合雷射 16 201146113 將^ ηΐ機,子的材料’频而言’例如4蝴A1A)、 ,化卿N)、氮德(AlN)、二氧切_)、鈦酸 ^的欽(^2)等的高介電常數填充材料;硬鐵氧磁體 詩顯h。、;斗:氣氧化鎮(Mg (〇阳、氮氧化銘(A1 (0H)2)、三 乳化銻(Sb203)、五氧化銻(Sb2〇 )、胍鹽 匕 ° _該無機微粒子’可單獨使用上述無 in,亦可組合使用2種以上。該等無機微奸,由於執傳導 在讓g阻燃性、粒徑分布、色調的自由度等很高,故 ,性發揮的情況下’進行適當掺合以及粒徑設 宜传用单^ /1回度填充化之目的。另外軸並無制限定,惟 ^用+均粒徑在絶緣層的厚度以下的填料,宜使用平均粒徑_ 〜ΙΟμπι的填料’更宜使用平均粒徑〇 〇5μηι〜5_的填料。 用石上^該無機微粒子,為了提高在該絶緣基材中的分散性,可 微粒^在°另外’該絶緣基材’為了提高該無機 人劑並;ί、Ϊΐ的分散性’亦可含有魏偶合劑。該魏偶 二3別限定。具體而言,例如:環氧魏系、縣魏系、 “ 、乙烯基魏系、苯乙烯基魏系、甲基丙烯醯氧基石夕 3^丨ί基魏系、鈦酸鹽系等的魏偶合劑等。關於該矽 兀】1 i可皁獨使用上述矽烷偶合劑,亦可組合使用2種以上。 八糾丄該絶緣基材,為了提高該無機微粒子在該絶緣基材中的 Γ〇 可含有分賴。該分散継無_限定。具體而言,例 山梨麵系、烧絲_系、高分子系的分散劑等。 劑,可單獨使用上述分侧,亦可組 (樹脂覆膜) 覆膜m,只要可在該繼除去步驟除去即可,其他 ΐ溶型It。具體而言’例如:有機溶劑或驗性溶液可輕易溶解的 豹由可用後述的既歧體(膨潤液)膨潤的樹脂所構成的 旨覆膜等。其中’從容易正確地除去這個觀點考量,尤苴 且使用%雛樹鋪膜。另外,該膨難樹脂制_液^ 17 201146113 液)^膨潤度宜在m以上。另外,該膨潤性樹脂覆膜 Γτίΐ(膨潤液)實質上不會溶解但會因為膨潤而容易從該绝緣a ,m表面剝離的樹脂覆膜之外,也包含 容易從 離的飢覆膜,或是相對於練體 該溶解而容易從該絶緣基材D1表面剝離的樹脂覆)^解且曰因為 的形成方法並無特別限定。具體而言,例如. “焊塗佈可形成樹脂覆膜的液狀材料之後使 覆膜轉印到絶緣紐D1的表*上的方法;忒Ϊ =ίϊ=ΐ並無特別限定。具體而言’例如:習知的旋轉塗 該樹脂覆膜D2的厚度宜在1〇以下’ 二方面,該樹脂覆臈D2的厚度宜在。·1μιη以在宜=二。另 ==細的厚度太厚時,在該電路溝槽形成=用上雷 機械加王卿成的電路溝槽或貫通孔等部位的精度合有 均;:度=脂覆膜Μ的厚度太薄時,會有樹職 ίί、’Ρ^佳祕之膨離職細為例制雜脂覆膜D2。 的伽^f _賴膜宜使肋對於膨驗的膨财在以上 的^ΐΐ °再者’更宜使用相對於膨潤液的膨潤度在100%以上 性^糾,#該細度太辦,在該細除去步驟中膨潤 W月曰覆膜會有難以__向。 』 覆膜m樹脂伽的形成方法並無特別蚊,與上述樹脂 基材功的/==同的方法即可。具體而言’例如’在該絶緣 乾、m表面上塗佈可形成膨濁性樹脂覆膜的液狀材料之後使其 所形成之在支持基板上塗佈該液狀材料之後,將待其乾燥 舰職材D1的表面上的方法等。 ㈣壯亥膨潤性樹脂覆膜的液狀材料,例如,彈性體的懸浮液-次献液專。關於該彈性體的具體例,例如:苯乙婦-丁二稀H · J8 201146113 系彈性體,丙晞酸醋系共聚物等的丙稀酸系彈性體, 、〜广21彈性體等。若糊鱗彈性體,便可藉由調整分散成懸 =液或植液的雅職餘子的㈣度或膠化料㈣形成具 備所期望之膨潤度的膨潤性樹脂覆膜。 枯二f外’該膨潤性樹脂覆膜特別宜為膨潤度相依於膨潤液的PH 隨f的覆膜。若使用該等覆膜’藉由使該觸媒彼覆步驟中的液 =件_鶴除去步驟中的液性條件不同,便可在觸媒披覆步驟 中Ϊ Γ值之下使膨潤性樹脂覆膜對絶緣基材維持很高的密合力, g在覆膜除去步驟中的ρΗ值之下使膨潤性樹脂覆膜輕易地被剝 更具體而言,例如’當該觸媒披覆步驟具備例如在pH值卜3 ^圍_ _賴_雜雜(雜觸金屬雜溶液)中進行 处理的步驟,且该覆膜除去步驟具備在pH值的範圍内的 ,1± /谷液巾使u性翻旨覆麟彡潤的步驟時,該膨潤性細旨覆麟 5亥酸性電鍍觸媒膠狀溶液的膨潤度宜未達5〇%,更宜在4〇%以下, ^對該驗性溶賴膨潤度宜在5G%以上,更應The wire is used for electricity (4) organic substrate I system is limited. Specifically, for example, the above-mentioned epoxy resin, nitrogen-containing resin, __, etc. of A iiSL type epoxy resin, double s type epoxy resin, and aramid epoxy f " Further, it is possible to use the above respective epoxy resins and iiit of the above-mentioned epoxy resin, spinel pentadiene type epoxy resin, benzene_ and ε, alicyclic epoxy resin, and the like. In addition, in order to make it ii, it will shoot ίί ‘When the base material is made of the above-mentioned respective resins, in general, in order to harden, it is particularly limited. Specifically, for example, dicyandiamide, rsv = bismuth, for example, secret type, aryl type, _ type and other hardeners = Fu: flame retardancy can be used, for example, after phenolic resin or after Although it is not particularly limited', it is because of the use of laser processing of the shape of the moon: 'The use of laser light in the wavelength range of _ ~ 4GGnm range of good absorption rate of Xie Yuezhen. Specifically, for example, a polyimide resin or the like. The tree also has a filler on the substrate (insulation layer). The filler may be a helmet 饩 particle or an organic fine particle, and is not particularly limited. If it is included, the filler in the machined processing section will be exposed, and the unevenness of the filler can improve the i-integration laser between the electric hard resin. 201146113 will be ^ηΐ machine, the material of the sub-frequency is, for example, 4 butterfly A1A), Huaqing High dielectric constant filling materials such as N), nitrogen (AlN), dioxo-), titanic acid (^2), etc.; hard ferrite magnets. , bucket: gas oxidation town (Mg (Yangyang, Nitrogen Oxide (A1 (0H) 2), triple emulsified bismuth (Sb203), bismuth pentoxide (Sb2 〇), 胍 salt 匕 ° _ the inorganic microparticles can be separate In the case of using the above-mentioned no in, it is also possible to use two or more types in combination. In the case of the inorganic micro-rape, the degree of freedom of the flame retardancy, the particle size distribution, and the hue of the g is high. Appropriate blending and particle size should be used for the purpose of filling with a single ^ / 1 degree. In addition, the shaft is not limited, but the filler with a uniform particle size below the thickness of the insulating layer should be used. The filler of ΙΟμπι is more preferably used as a filler having an average particle diameter of μ5μηι 〜5_. The inorganic fine particles are used in the stone, and in order to improve the dispersibility in the insulating substrate, the fine particles may be further in the 'insulating substrate' In order to improve the inorganic agent; the dispersibility of ί, Ϊΐ may also contain a Wei coupling agent. The Wei wei 2 is not limited. Specifically, for example, Epoxy Wei, County Wei, ", Vinyl Wei System, styryl-Wei-based, methacryloxy-oxyxanthene, 3^丨ί-based, titanate, etc. The above-mentioned decane coupling agent may be used alone or in combination of two or more kinds. The insulating substrate is entangled in order to increase the enthalpy of the inorganic fine particles in the insulating substrate. The dispersing enthalpy may be limited. Specific examples include a sorbus noodle, a calcined ray-based system, a polymer-based dispersant, and the like. The above-mentioned side or side may be used alone (resin coating) The film m may be removed as long as it can be removed in the subsequent removal step. Specifically, for example, the organic solvent or the test solution can be easily dissolved, and the leopard can be used as the latter (swelling liquid). A film made of a swelled resin, etc., in which 'from the viewpoint of easy removal of the viewpoint, especially the use of % saplings. In addition, the expansion of the resin _ liquid ^ 17 201146113 liquid) ^ swelling degree In addition, the swellable resin film Γτίΐ (swelling liquid) does not dissolve substantially, but is easily detached from the surface of the insulating a and m due to swelling. Hunger film, or dissolve relative to the body The method of forming the resin which is easily peeled off from the surface of the insulating base material D1 is not particularly limited. Specifically, for example, "welding coating can form a liquid material of a resin film and then turn the film. The method printed on the table * of the insulating button D1; 忒Ϊ =ίϊ=ΐ is not particularly limited. Specifically, for example, a conventional spin coating of the resin coating film D2 is preferably 1 Å or less, and the thickness of the resin coating D2 is preferably. · 1 μηη is in the appropriate = two. In addition, if the thickness is too thick, the groove formation in the circuit = the precision of the circuit groove or the through hole of the upper mine machine plus Wang Qingcheng; the degree = the thickness of the grease film 太 too When it is thin, there will be a tree ίί, 'Ρ^ 秘 佳 佳 之 离 离 离 离 为 为 为 为 为 佳 佳 佳 佳 佳 佳 佳 佳. The gamma ^f _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ In the fine removal step, it may be difficult to swell the W 曰 film. The method for forming the film m resin gamma is not particularly a mosquito, and the same method as the above-mentioned resin substrate work /==. Specifically, for example, after the liquid material which can form a bulky resin film is coated on the insulating dry m surface, the liquid material which is formed on the support substrate is coated, and then the liquid material is dried. The method on the surface of the ship's material D1, etc. (4) Liquid materials of Zenghai swellable resin film, for example, suspension of elastomer - sub-donation. Specific examples of the elastomer include, for example, styrene-butadiene H·J8 201146113-based elastomer, acrylic-based elastomer such as acrylonitrile-based copolymer, and ~21 elastomer. If the scale-elastic elastomer is used, it is possible to form a swellable resin film having a desired degree of swelling by adjusting the (four) degree or the gelatinized material (4) of the detachment of the suspended liquid or the planting liquid. The swellable resin film is particularly preferably a film having a degree of swelling depending on the pH of the swelling liquid with f. If such a film is used, the swellable resin can be made under the 披 Γ value in the catalyst coating step by making the liquid conditions in the liquid-to-worker-removing step in the catalyst-independent step different. The film maintains a high adhesion force to the insulating substrate, and the swellable resin film is easily peeled off under the ρ Η value in the film removing step, more specifically, for example, when the catalyst coating step is provided For example, a step of treating in a pH value of 3 _ _ _ _ _ hetero (hybrid metal mixed solution), and the film removal step is provided in the range of pH, 1 ± / valley liquid towel to make u In the step of reversing the temperament of the lining, the swellability of the swellable fine-grained glutinous 5 hai acidic plating catalyst colloidal solution should be less than 5〇%, more preferably less than 4〇%, ^ The degree of swelling and swelling should be above 5G%, and more should

是在500%以上。 取T /该等膨潤性樹脂覆膜,例如:由具有既定量的羧基的彈性體所 ,成的片々材,用於印刷配線板的形成圖案用的乾膜光阻(以下亦稱 二DFR)等中的光硬化性的鹼性顯影型的光阻經過全面硬化之後所 得到的片材,或是熱硬化性或鹼性顯影型片材等。 ⑽關於具有羧基的彈性體的具體例,例如:包含具有羧基的單體 J位作為共聚成分,使分子中具有絲的苯乙烯—丁二烯系共聚物 荨的二烯系彈性體、丙烯酸g旨系共聚物等的丙烯酸系彈性體以及聚 =彈性辟。若儀該轉性體,勤被分散賴浮液或乳 狀液的彈性體雜當量、交聯度_化度敎可戦賊所期望之 驗性膨潤度_彡赚樹脂細。雜體巾峨基會料鹼性水溶液 而使膨潤性獅覆膜刺,财使膨雜樹脂覆酿絶緣基材表面 剝離的作用。另外’酸當量縣每i #量峨基的聚合物重量。 具有幾基的單體單位的具體例,例如··(甲基)丙稀酸、富馬酸、 19 201146113 #土皮酉夂、巴豆酸' 伊康酸以及馬來酸軒等。 ,, 更且為⑻〜80〇。當酸當量太小時,盘、'宠拔式並灿 向ΓΓ當致對電猶ί理液的耐性會有降 向。 里寺對鹼性水/谷液的剝離性會有降低的傾 另外,彈性體的分子量宜為!萬〜刚萬,更 體的t子量太大時_性會有降低的傾向,太小触产 -’奴維持膨潤性樹脂覆膜厚度均勻 1 ς二 耐性也會有惡化的傾向。 _邱電鍍别處理液的 個聚 所得到 扯含該。^剌的聚合物 細===巧為必要齡當作主細旨,亦可 S f該分子量、’其重量平均分子量為_〜 戋對電& :!*= G〜5麵。纽子量太小時,細的彎曲性 附者樂液的耐性(耐酸性)會有降低 離性或成為乾膜時的貼合性會有變差=向= ί制藥娜、抑制雷射加工時的熱變形或流動 號公報或日本特開2GG1-2G1851號公報等。^ f11^0 t T皮酸、巴_、伊康酸、馬來酸酐、馬來 酉义+酉日、丙稀酸了龄,可使用,或組合2 _上。關於(b) 20 201146113 =二般而言’例如··呈非酸性且在分子中具有(_ 惟並非以此為限。以保持在電鍍 曲性等各觀性的方式選擇即可。具體而言,有 雨:ίΐ烯酸乙酯、^基丙烯酸異丙酯、甲基丙烯酸正丁酯: 二基==二丁酯、甲基丙烯酸第三丁醋、甲基丙烯: 酉曰、甲,巧酸2-經丙_等。另外還有醋酸乙 ^ —i —hoi)的酯類、甲基丙烯腈細 乙烯衍生物等。另外利用在分子;Υ有一 ,,用娜合_單體中選出具備複數不飽和基料體, 匕由經t胺基、酿胺基、乙烯鱗反應性官能基導入分子骨架: =曰中所έ有的缓基量賴當量宜為100〜2 0、 ⑻。在驗,量係指其令具有i當量的羧基的聚合⑻: 與溶媒或其他組成物的相溶性或電鑛前處理ΐ耐i 二外Λ二挪'、°。另外,當酸當量太高時,獅性會有降低的傾向。 另外(a)早體的組成比率為5〜7〇質量%。 _ 、 且田ΪΪΪ*聚物’只要是具有對魏核附著的耐性或是可_ 者即可。另外為了提高乾膜(1皿)的貼合性,ΐ考^ 劑。具體而言,有甲基丙‘3種耐性可添加交聯 異丙醋、甲基丙旨、甲基丙烤酸 :丁西匕甲基丙稀酸第二丁醋、甲基丙烯酸第 rLi X基細酸2邊乙醋、甲基丙稀酸2_經丙輔員等。另外還 苯的乙稀醇的_、甲基丙婦猜、苯乙稀或可聚合的 外利用在分子中有一個上述聚合性不飽和基的 也可製得。再者,柯包含多官驗不飽和化合 可^述早體或使單體反應的寡聚物的其中任—種。除了上 二早m ίτ,含其他二種以上的光聚合性單體。關於單體’例 或聚丙:ί:ΐΐ曱基丙烯酸酯、1,4_環己二醇二甲基丙烯酸酯、 聚__、聚乙二醇二甲基丙稀酸酿、聚氧乙稀 a乳丙-%—曱基丙__等的聚氧烧二醇二曱基丙稀酸醋、2— 21 201146113 二S對羥苯基)丙烷二甲基丙烯酸酯、甘油三曱基丙烯酸酯、二新戊 四醇五甲基丙烯酸醋(dipentaerythritol penta(meth)acrylate)、三經曱 基丙燒二環氧丙基喊三甲基丙烯酸酯、雙酚A二氧化丙烯醚三曱 基丙烯酸醋(bisphenol A diglycidyl ether (meth)acrylate)、2,2 —雙(4 —曱基丙烯氧基五乙氧基苯基)丙&烷 (2,2-bis(4-methacryl〇xypentaethoxyphenyl)propane)、含有胺某甲酿 # 類的多官能甲基丙烯咖旨等。亦可為上述的單體或使單體2 = 聚物的其中任一種。 於再者,亦可含有填料。填料並無特別限定,例如:二氧化石夕、 ,氧化紹、氫氧化鎂、碳酸約、黏土、白陶土、氧化鈦、硫酸鎖、 ^化銘、氧化鋅、滑石、雲母、玻璃、鈦酸鉀、灰石、硫酸鎮、刪 呂、有機填料等。另外光阻的厚度—般為!〜师⑺很薄,故填 料大小宜小者為佳。可使用平均粒徑小,粗粒經過切割者,惟亦可 在分散時使其碎裂,並過濾除去粗粒。 ^他添加劑,例如:光聚合性樹脂(光聚合引發劑)、聚合防止 染t顏料、發色系顏料)、熱聚合引發劑、環i基物 負或胺甲酸乙酯等的交聯劑等。 恭在本發明的印刷板加工程序中,有時會使用雷射加工,當使用 触必須利用雷射對光阻材料賦予剝離性。雷射加工機可 分子#射或⑽―YAG餘#。該等雷射加 担ϋ各種α有波長,使用對該波長的吸收率較高的材料,便可 ^生,效率。其中UV_YAG雷射適合用於細微加工 ί/ί ^f波355腹、4倍高次譜波266nm,故對該等波長吸^ ’ 的選擇。另—方面’有時使用吸收率低於某-程产 由於體而言’例如,當使用w吸收率較低的光阻時, 過絲,故可在雌錢行歸層加卫時使能量 使用雷射光伽各有不㈤,故朗應狀況, 22 201146113 分,可使用含有光聚合引發劑的光硬化性樹脂組成物的 DFR的具體例’例如日本特開2〇〇〇_23119〇號公報 : -20腕號公報、日梢种n—腦2號公報所 性樹脂組成物的乾膜使其全面硬化所得到的片材, ^ σ 影型的疆,例如,旭化成股份有限公司製的驗性顯 另外:,於赫的膨潤性樹脂覆膜,例如:含有緩基且以 ,主要成勿的樹脂(例如,吉川化工股份有限公司 NAZDAR229」)或以苯酚為主要成分的樹脂 :: LEKTRACHEM 公司製「i〇4F」)等。 ,潤性樹脂舰,用f知的旋轉塗佈法或棍塗佈 ^樹脂的_誠佈在絶緣基材表面上 燥,或用真空疊合機等將形成於支持基板上的DFR貼合綾 材表面上之後使全面硬化,便可輕易形成。 、、、、’ 土 另外,該樹脂覆膜,除了上述的樹脂覆膜之外,還有以 脂覆膜。例如,構成該樹脂覆膜的光阻材料,還有以下的材料、。、 構成該樹脂覆膜的光阻材料的必要特性,例如:⑴在述的 媒披覆步财’對浸潰已形麟脂繼之絶 师 :削液)的耐性鶴;(2)在後述的細料步驟 J ^形成樹脂覆膜之絶緣基材浸潰於驗性液體中的步驟,便可奉; ίί=認(光阻〉;(3)成膜性較高;(4)乾膜网化較容易厂(5) 關於電鍍核附著藥液,雖然文後會有詳 -Sn膠狀觸媒系統的情況下’全部為酸性_二);=生。g ^子觸職統的情況下,_舒催化劑為弱驗性 射H y 示此以外為酸性。由上可知,對電鑛核附著藥液的 值1〜11 ’更宜耐得住PH值1〜12。另外,所 光阻成膜樣本浸潰於*液中時,光阻轉膨潤或 ⑼。r揮光阻的功能。另外,一般而言,浸潰溫度為室溫〜 非以此間為1〜1〇分鐘,光阻膜厚為1〜1〇阿左右,惟並 23 201146113 覆膜除去步驟所使用的驗性剝離藥液,雖 一,言係使_如Na0H水溶液或碳_水溶匕 〜14,較佳為1^值12到14,使 ,、PH值為11 wio〇/〇^ , 10 ^里,-般以浸潰或喷灑處理,惟並非以此為限。、”、、 為了在絶緣材料上形成光阻,成膜性也變 ,眼孔等缺陷的均勻_。另外,_為了 成 要的。另外用疊合機(輥子、真空)將經過乾膜化的上且貼 口在、、,色緣材料上。貼合的溫度為室溫〜丨6(rc,壓力時、 如是,在貼合時便需要粘著性。因此 ^。 造,惟並非以此為限。 復盈腰灭口的3層構 W ϋί保存性,能夠在室溫下保存當然是最好的,惟也必須紗 靖低峨錄成不會分離 ^樹脂宜為具備熱可塑性質的直鏈型聚合物。為了 ^':1性#特性亦可接枝而使其分枝。關於其分子量,算數二 刀,為1000〜500_左右,宜為麵〜5〇〇〇〇。若分子均 生或電鍍核附著藥液耐性(耐酸性)會有降低的傾t’ 去么置太大,驗剝雜或乾膜貼合性會有變差的傾向。再 ====藥液耐性、防止雷射加工時的熱變形或流 产八^主要樹脂的組成,將以下⑻與(b)物質聚合便可得到:(a) : 至^、具有1個聚合性不飽和基的幾酸或酸酐的單體. 〇 , : g4^ ^ —報、日本特開2〇〇〇一231190號公報以及日本特開2001 · —851號公報。關於⑷物質,例如··(甲基)丙稀酸、富馬酸、桂. 24 201146113 皮t、巴豆酸、伊康酸、馬來酸酐、馬來酸半醋、丙烯酸丁醋等, 可單獨使用,亦可組合2種以上使用。關於(b)物質,一般而言,例 ^呈非酸性且在分子中具有(一個)聚合性不飽和基者,惟^非以 此為限。以保持在電鑛步驟中的耐性、硬化膜的可,彎曲性 ^的^選擇即可。具體而'^,有甲基丙稀酸曱酷、甲基丙烯酸乙 酉曰、甲基丙烯酸異丙醋、曱基丙稀酸正丁醋、甲基丙婦酸第二丁醋、 =丙烯酸第三丁醋、曱基丙烯酸祕乙、甲基丙烯酸2·經丙醋 f。另外ϋ有醋酸乙湘旨等的乙烯醇的賴 猜 ϊίϋ合Γ乙稀衍生物等。另外利用在分子中具^個上= 二性不飽和基的舰錢_聚合也可製得。再者,以能夠3維交 萁在3聚ΐ物料體中選Λ具備複數錢和基的單體, ,乳土 、坐土、胺基、醯胺基、乙烯基等反應性官能基導入分 ^ j。當樹脂中含有絲時,樹脂中所含有的絲量的酸 ,1〇〇〜2_’較佳為觸〜_。在此酸當量係指其中具有i合量 ,ΐί,合,重量° #酸#量太低時’與溶媒或其他組成“ ^剝離性會有降低的傾向。另夕_體的組 ϋ ίί聚物’只要是具有對電鍍核_的耐性或是可輕 著性賦予材料。再者,為了提高各種耐性可 ,例如:甲基丙稀酸甲酯、甲基丙烯酸⑽、甲= ^ :正丁醋、甲基丙烯酸第二丁醋、甲基丙烯 乂Π乙烯酯ί的乙烯醇的酯類、甲基丙烯腈、苯乙烯或可ί ^的本乙烯衍生物等。另外利用在分子中具有一個上 1 ,基的_或酸酐的聚合也可製得。再者,亦可包含多官&》 單體或使單體反應的寡聚物的其中任一種 己一和一甲基丙細酸醋小4-環己二醇二甲基兩 25 201146113 =烯二甲基丙烯酸酯、聚乙二醇二曱基丙烯酸酯、 苯基)丙烧二甲基丙烯麵、甘油ΐ甲 ^ Τ基丙稀_、三㈣基丙院三環氧丙基趟三甲 二雙紛Α二氧化丙烯喊三曱基丙稀酸S旨、2,2一雙(4 甲^烯基麻、含有祕f __多官能 為上崎践綱反應的寡聚物 二童ίΐ、’ 含有填5。填料並無特別限^,具體而言,例如: : 、虱氧化鋁、氫氧化鎂、碳酸鈣、黏土、白陶土、氧化鈦 =鎖、偷、胸、料、_、_^鈦、 °另外光阻的厚度,1‘ 准亦可在分散時使其碎裂,並過遽除去粗粒。 试 劑、= ·光聚合性樹脂(光聚合引發劑)、聚合防止 質或胺甲系·熱聚合_、環氧基物 •射iii明的印概加工程序中,有時會使用雷射加工,當使用 ;擇碳酸氣體=利===材料賦予剝離性。雷射加工機可 產生其中UV—YAG雷射適人用於知外々τ -3倍高次諧波355nm、4大用於、ϋ工,雷射波長為 較高,是較佳的選擇。^======長吸收率 材料比較好。具體而言,例如f 某一程度的 集令。亦即,根^雷基底進行絶緣層加工時使能量 使用雷射光吸收率經過調整的光 1且優點各有不同,故宜因應狀況, <電路溝槽形成步驟> 電路溝槽形成步驟,係在絶緣基材D1上形成電路溝槽D3的; 26 201146113 步驟。 ,形成:线路溝槽D3的方法,並無特別限定。具體而言 ’例如: >成有以樹脂覆膜D2晚緣基材D1上,從該樹脂覆膜〇2的外 表面側,實施雷射加工以及模切加工等的_加工或壓型加工等的 機械加士 ’以形成具備所期望之形狀以及深度的電路溝槽出。當 欲形,高精度的細微電路時,宜使用雷射加卫。若湘雷射加工, 便可,由改變雷射輸出以自由調整切削深度。另外,關於壓型加 宜使用例如在奈米印刷的技術領域中所使用的利用細微樹 壓型加工。 ,外,亦可在該電路溝槽Μ的-科上設置用絲成介層孔 的貝通孑匕D4 〇 該f驟’限定出該電路溝槽D3的形狀以及深度或該貫通 3及位置等。另外,該電路溝槽形成步驟挖掘該樹脂 ΐ 以上的厚度即可,可剛好挖掘該樹脂覆膜D2的厚 度,也可挖掘超過該樹脂覆膜D2的厚度。 干 定路ΪΪ形成步驟所形成的電路溝槽D3的寬度並無特別限 右使用雷射加工,即使線寬在2Gpm以下的細微電路, 二L形成1另外,電路溝槽的深度,係在利用填滿電鑛得平電 S電路=材的高低差的前提下,設置為本魏 <觸媒彼覆步驟> 觸媒=步驟,係在該電路溝槽D3的表面以及該樹脂覆膜说 勺表面上彼覆電_媒或其前驅物的步 通 7的情況下’貫通孔D4内壁表面也會被心== 敵綱媒或其前驅物D5 ,係在該電麟理步齡利用益電 部位上形成無電解電賴而3 拍“ί .,電ί觸媒’只要使用習知的無電解電鑛用觸媒即可,其他 覆膜除去之德IP她U f先披電鑛觸媒的刖驅物,並在樹脂 设膜除去之後使邊觸媒生成。關於電賴媒的具體例,例如:金 27 201146113 、離龄,或是使料金屬生前驅物。 彼覆電鍍觸媒或其前驅物D5的方法,例如:用在值丄 :^性條件下可進行處理的酸性pd_Sn膠狀溶液進行處理之 後,再雜溶液進行處理的方法。具體而言,例如以下的方法。 认主Ϊ先’將形縣電麟槽D3以及貫航D4舰緣基材D1 ^ 上所附著的油分等在界面活性劑的溶液(清潔劑、調和劑)中 的時間纽。接著’因應需要,用過硫酸納—硫酸系的軟 萨軟钮刻處理。然後,在pH值1〜2的硫酸水溶液或鹽 二水:液相_溶液中進行酸洗。接著,浸潰於濃度左右 ^以,化亞錫水溶液㈣主要成分的職液巾進行使氣化物離子 緣基材m之表面上的預浸處理。之後,再浸潰於含有氣 f亞錫與氣化鈀且pH值1〜3的酸性Pd—Sn膠狀物等的酸性電鍍 =膠狀溶独賴魏附Pd以及Sn。,在触_^電^ 軋化鈀之間產生氧化還原反應(SnCl2 + PdCl2—SnCl4 + PcU)。 错此,析出電鍍觸媒亦即金屬鈀。 f外’關於酸性電鍍觸媒膠狀溶液,可使用習知的酸性Pd— =勝^大觸媒溶液等,亦可採用使用酸性電鍍觸媒膠狀溶液的市售 鑛程序。關於該等程序,例如:Rohm and Haas電子材料股份有 限公司所系統化販售者。 、藉由該等觸媒彼覆處理,便可在該電路溝槽D3的表面、該貫 的内壁表面以及該樹脂覆膜D2的表面上披覆電鍍 其前驅物D5。 <覆膜除去步驟> 覆膜除去步驟’係從實施過該觸媒披覆步驟的絶緣基材D1將 該樹脂覆膜D2除去的步驟。 =去該樹脂覆膜D2的方法,並無特別限定。具體而言,例如: 用f*,溶液(膨潤液)使該樹脂覆膜D2膨潤之後,從該絶緣基材D1 將该j封脂覆膜D2剝離的方法;用既定溶液(膨潤液)使該樹脂覆膜 D2 ~潤’且使其一部分溶解之後,從該絶緣基材m將該樹脂覆膜 D2剥離的方法;以及用既定溶液(膨潤液)將該樹脂覆膜D2溶解除 28 201146113 方ίί: IT亥膨潤液’只要是能夠使該樹脂覆膜D2膨潤者 的古、、^ ^覆的該、、色緣基材D1在該膨潤液中浸潰經過既定時間 外,hi =後’亦可在浸潰時用超音波照射以提高除去效率。另 潤而將其剝離時,亦可輕輕用力將其剝除。 行説明夕。,就使用該膨潤性樹脂覆膜作為該樹脂覆膜D2的情況進 使^雜触義D2獻_液體(賴液),只要使用 質上讓該絶緣基材D1以及該電鑛媒或其前驅物D5分解 =解而只會讓該膨潤性樹脂覆膜D2_或溶解的液體即可,並 旦^特別限定。另外’宜使用讓該膨潤性樹脂覆膜D2膨潤到Ϊ 巧離之程度的液體。該等膨潤液,可根據膨潤性 種=厚度選擇較適當者。具體而言,例如:當膨潤性樹脂覆二 一烯系彈性體、丙烯酸系彈性體以及聚酯系彈性體等的彈性體、將 (a)在刀子中至少具有1個聚合性不飽和基的幾酸或酸酐的至少1 種以上的單體以及(b)可與該(a)單體聚合的至少丨種以上的單體聚 合所知_聚合物獅或含有該聚合物細的齡組成物、含有叛 基的丙烯酸系樹脂所形成時,宜使用例如濃度1〜1〇%左右的 化鈉水溶液等的鹼性水溶液。 另外,當在觸媒披覆步驟中使用以上述酸性條件進行處理的電 鍍程序時,膨潤性樹脂覆膜D2宜由在酸性條件下膨潤度未達 50% ’宜在40%以下’在鹼性條件下膨潤度在5〇%以上的例::二 烯系彈性體、丙烯酸系彈性體以及聚酯系彈性體等的彈性體、將(a) 在分子中至少具有1個聚合性不飽和基的竣酸或酸酐的至少1種以 上的單體以及(b)可與該(a)單體聚合的至少1種以上的單體聚合所 得到的聚合物樹脂或含有該聚合物樹脂的樹脂組成物、含有羧^的 丙烯酸系樹脂所形成。該等膨潤性樹脂覆膜,利用pH值12二14 的鹼性水溶液,例如濃度1〜10%左右的氫氧化鈉水溶液等,便可 輕易被膨潤、剝離。另外’為了提高剝離性,亦可在浸潰時用超音 波照射。另外,亦可因應需要輕輕用力將其剝除。 29 201146113 覆膜倾脂覆膜02膨潤的方法,例如:將膨潤性樹脂 、去。、另冰斤披覆之絶緣基材1)1浸潰於膨潤液中經過既定時間的方 雄二、、2’+為了提高剝離性’最好是在浸潰時用超音波照射。另外, 心0而未剥離時,亦可根據需要輕輕用力將其剝除。 <電鍍處理步驟> f 去翊脂賴D2之躺魏緣基材di 媒哎鑛處理的方法,可使用例如:將部分披覆有電鑛觸 =;月_匆1>5的絶緣基材D1浸潰於無電解電鑛液中,只在 二方法f觸媒或其前驅物D5的部分上析出無f解電賴(電鑛層) 華電=金Λ:銅(Cu)、_、綱、 的選摆。二^巾為齡的電鍍㈣耗性㈣,是較佳 較佳的選擇。卜’§ 5有Nl時,雜性或餅制密合性優異,是 前驅步驟,在鱗基材D1絲触找綱媒或其 路溝出成=電r方:是广只在欲形成電 =冓=工析出無電—膜•即=ΐ二= 的電ϊ膜10、因Ϊ狹2細从電路’也不會在鱗接電路之間殘留多餘 電錢膜。口此,此夠防止短路或遷移的發生。 <檢査步驟> 盆使ίίΓΐ,之電路基板的製造方法中,更可包含檢査步驟, itii含錢紐㈣,細彡倾除去步驟之後’ 昭射势在覆赚妹H職査對象面 先或近紫外光,利用螢光性物質的發光,便可檢查出有益 d 覆=ΐ瑕錄置。故在本實職樣“造^ τ可形成線見以及線間隔非常狹小的電氣電路。 當形成線寬以及線間隔極端狹窄之電氣電路時,如圖3所示 201146113 的,樹脂覆膜有可能會無法完全除去而殘留在絶緣基材D1表面上 所开>成之相隣電氣電路D8之間。此時,便會在該部分上形成無電 解電鍍膜,而成為發生遷移或短路等問題的原因。在此情況下,若 具備上述檢査步驟,便可檢查出覆膜除去有無瑕疵或覆膜除去瑕疵 位置。另外,圖3係説明圖,用來說明使樹脂覆膜含有螢光性物質 並利用螢光性物質的發光檢查出覆膜是否徹底除去的檢査步.驟。 一檢査步驟之樹脂皮膜D2所含有的螢光性物質,只要是被既定 光源照射就會顯現出發光特性者即可,其他並無特別限定。具體例 如:Fluoresceine、Eosine、Pyronine G 等。 ^利用本檢査步驟檢查出螢光性物質之發光的部分,即為樹脂皮 膜D2殘留殘產D2a的部分。因此,除去檢查到發光的部分,便可 防止無電解電鍍膜形成於該部分上。藉此,便可防止遷移或短路等 問題的發生於未然。 <去膠渣處理步驟> 外在本只知態樣之電路基板的製造方法中,在該電錢處理 =施之後’具體而言,在填滿魏實施前或實施後,亦可更包 έ實施去驗處理的去雜處理步驟。實施去雜處理,便叙 的多餘樹脂除去。另外,在預定為具備所製‘ ^ 土板的夕層電路基板的情況下,可賴絶緣紐的未形成 t鑛^部分的表面祕化’峨^其無上層的密 ^ β ’亦可對介層底實施去釈查處理。藉此,便可除去介; ^旨。另外,該去驗處理並無制蚊 ㈣二2里。具體而S ’例如:浸漬於過猛酸溶液的處理。 、、r =上述乂驟,便形成如圖丨®)所示的電路基板mo。 〔第1—2實施態樣〕 顏雷實施態樣中,係說明在平面的絶緣基材上形成電 使絶綾電路ΐ板,惟本發明並賴限於此。具體而言,即 能夠=具^配狀電氣電路的電ϋ立體電 况月第1—2貫施態樣之立體電路基板的製造方法。 31 201146113 驟的說明製造第i— 2實施態樣之立體電路基娜 D5i 所港示的,在具有高低差部分的立體絶緣基材 Z的表面上喊樹脂細D2。糾,齡軸當於賊形成步 該立體絶緣基材D51可使用f知用來製造立體電路 。關於用來製付樹脂成形體的樹脂材料的具體例,例 ΐ苯脂、聚_脂、各_樹脂、聚_樹脂、 =脂覆膜D2的形成方法並無特別限定。具體而言 與该第1 — 1實施態樣同樣的形成方法等。It is over 500%. Taking T/the swellable resin film, for example, a sheet material made of an elastomer having a predetermined amount of carboxyl groups, and a dry film resist for patterning a printed wiring board (hereinafter also referred to as two DFR) The photocurable alkali-developing type resist of the photocurable alkaline development type is subjected to overall hardening, or a thermosetting or alkaline developing type sheet. (10) Specific examples of the elastomer having a carboxyl group include, for example, a diene-based elastomer having a styrene-butadiene-based copolymer fluorene having a carboxyl group in the J-position of a monomer having a carboxyl group, and an acrylic acid It is intended to be an acrylic elastomer such as a copolymer and a poly-elastic. If the body is turned, the elastomer is equivalent to the amount of cross-linking of the float or emulsion, and the degree of cross-linking is _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The sputum base of the miscellaneous towel will be coated with an alkaline aqueous solution to make the swellable lion cover the thorn, and the effect of peeling off the surface of the insulating substrate by the swelled resin. In addition, the acid equivalent weight of the polymer of the thiol group per i. Specific examples of the monomer unit having a few groups are, for example, (meth)acrylic acid, fumaric acid, 19 201146113 #土皮酉夂, crotonic acid', itaconic acid, and maleic acid. ,, and more (8) ~ 80 〇. When the acid equivalent is too small, the disk, the 'paste-type and the singer's resistance to the electricity will have a downward trend. Lisi Temple will have a reduced inclination to the alkaline water/gluteal liquid. In addition, the molecular weight of the elastomer should be! When the amount of t is too large, the amount of t is too large, and the tendency to decrease is too small. It is too small to touch the production - 'the slave maintains a uniform thickness of the swellable resin film. 1 ς The resistance also tends to deteriorate. _ Qiu plating other treatment liquids get the inclusion of this. ^剌 Polymer Fine === It is the main purpose of the necessary age, or S f the molecular weight, 'the weight average molecular weight is _~ 戋 to the electric & :!*= G~5 surface. When the amount of the neurite is too small, the resistance of the thin curved accompaniment (acid resistance) may reduce the dissociation or the adhesion when it becomes a dry film may be deteriorated = direction = ί Pharma, inhibition of laser processing The thermal deformation or the flow number of the time is disclosed in Japanese Laid-Open Patent Publication No. 2GG1-2G1851. ^ f11^0 t T-acid, bar _, itaconic acid, maleic anhydride, Malay 酉 酉 + 酉, acryl acid age, can be used, or a combination of 2 _. (b) 20 201146113 = In general, 'for example, it is non-acidic and has (_ is not limited to this in the molecule. It can be selected in such a manner as to maintain the visibility of electroplating properties, etc.) Words, there is rain: ethyl decanoate, isopropyl acrylate, n-butyl methacrylate: diyl == dibutyl ester, methacrylic acid third butyl vinegar, methacryl: 酉曰, A, It is an acid of 2-acid C, etc. In addition, an ester of ethyl acetate (i-hoi), a methacrylonitrile fine ethylene derivative, and the like. In addition, it is used in the molecule; Υ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The amount of the slow base is preferably 100~2 0, (8). In the test, the amount refers to the polymerization (8) which has an i equivalent of a carboxyl group: compatibility with a solvent or other composition or pretreatment of an electric ore. In addition, when the acid equivalent is too high, the lion's character tends to decrease. Further, the composition ratio of the (a) early body is 5 to 7 % by mass. _, 地田ΪΪΪ*polymer can be used as long as it has resistance to adhesion to the nucleus. In addition, in order to improve the fit of the dry film (1 dish), the test agent is used. Specifically, there are methyl propylene '3 kinds of resistance to be added cross-linked isopropyl vinegar, methyl propyl ketone, methyl propyl benzoic acid: dibutyl sulfonium methyl acrylate second vinegar, methacrylic acid rLi X Base acid, 2 sides of ethyl vinegar, methyl acrylate acid 2_ by the aid of the auxiliary. Further, it is also possible to use benzylic ether, methicone, styrene or a polymerizable externally available polymerizable unsaturated group in the molecule. Further, the ke includes a polyunsaturated compound which can be described as an oligo of the early or monomeric reaction. In addition to the last two years, m ίτ, contains two or more other photopolymerizable monomers. About monomer's example or polypropylene: ί: mercapto acrylate, 1,4-cyclohexanediol dimethacrylate, poly-_, polyethylene glycol dimethyl acrylate, polyoxyethylene a polyacrylic acid diol dimercapto acrylate vinegar, 2 - 21 201146113 bis-p-hydroxyphenyl) propane dimethacrylate, glyceryl tridecyl acrylate Dipentaerythritol penta(meth)acrylate, tri-propyl thiophene propylene glycol dimethacrylate, bisphenol A propylene oxide trisyl acrylate vinegar (bisphenol A diglycidyl ether (meth)acrylate), 2,2-bis(4-methacryloxypentaethoxyphenyl)propane A polyfunctional methacrylic ketone containing a certain class of amines. It may also be any of the above monomers or the monomer 2 = polymer. Furthermore, a filler may also be included. The filler is not particularly limited, for example: sulphur dioxide, oxidized, magnesium hydroxide, carbonic acid, clay, kaolin, titanium oxide, sulfuric acid lock, zhiming, zinc oxide, talc, mica, glass, titanic acid Potassium, limestone, sulfuric acid town, cut Lu, organic fillers, etc. In addition, the thickness of the photoresist is as usual! ~ Teacher (7) is very thin, so the size of the filler should be small. The average particle size can be used, and the coarse particles are passed through the cutter, but they can also be broken when dispersed, and the coarse particles can be removed by filtration. ^Additives, for example, photopolymerizable resin (photopolymerization initiator), polymerization preventing dyeing t pigment, chromonic pigment), thermal polymerization initiator, cyclic i-substrate negative or urethane cross-linking agent, etc. . In the printing plate processing program of the present invention, laser processing is sometimes used, and when it is used, it is necessary to use a laser to impart releasability to the photoresist. The laser processing machine can be molecular #射或(10)―YAG余#. These lasers are loaded with various alpha-wavelengths and use materials with a high absorption rate for this wavelength to achieve efficiency. Among them, the UV_YAG laser is suitable for fine processing ί/ί ^f wave 355 belly, 4 times higher order wave 266 nm, so the choice of the wavelength is the same. On the other hand, 'the absorption rate is sometimes lower than that of a certain process because of the body'. For example, when using a photoresist with a lower absorption rate of w, it is too silky, so it can be used when the female money is layered and added. In the case of the use of the laser light, the specific example of the DFR of the photocurable resin composition containing the photopolymerization initiator can be used, for example, the Japanese Patent Application No. 2-23119 No. Bulletin: The sheet obtained by fully drying the dry film of the resin composition of the 00 wrist number, the ○ wrist type, and the ^ σ shadow type, for example, manufactured by Asahi Kasei Co., Ltd. In addition, the swellable resin film of Yuhe, for example, a resin containing a slow-base group and a main resin (for example, Yoshikawa Chemical Co., Ltd. NAZDAR229) or a resin containing phenol as a main component:: LEKTRACHEM Company system "i〇4F"). , a dampness resin ship, which is dried on the surface of an insulating substrate by a spin coating method or a stick coating method, or a DFR bonded to a support substrate by a vacuum laminator or the like. After the surface of the material is fully hardened, it can be easily formed. Further, the resin film may be a film of a grease in addition to the resin film described above. For example, the photoresist material constituting the resin coating film has the following materials. The necessary characteristics of the photoresist material constituting the resin film, for example, (1) the resistant drape of the medium covered in the above-mentioned medium, the immersed lining of the lining of the lining, and the cutting of the liquid; (2) The fine material step J ^ the step of forming the insulating substrate of the resin film impregnated into the test liquid, can be cured; ίί = recognition (resistance); (3) high film forming property; (4) dry film It is easier to refine the factory (5). Regarding the electroplating core-attached liquid, although there will be a detailed-Sn gel-like catalyst system, the whole is acidic _2); In the case of the g ^ sub-contact system, the _shu catalyst is a weak test, and H y indicates that it is acidic. From the above, it can be seen that the value of the electro-nuclear nucleus-attaching liquid is 1 to 11 ′, which is more resistant to a pH of 1 to 12. In addition, when the photoresist film-forming sample is immersed in the * liquid, the photoresist is swollen or (9). r wave resistance function. In addition, in general, the impregnation temperature is room temperature ~ not between 1 and 1 minute, the thickness of the photoresist film is about 1 to 1 〇, but 23 201146113 The test stripping agent used in the film removal step Liquid, although one, the system makes _ such as Na0H aqueous solution or carbon_water soluble 匕14, preferably 1^ value 12 to 14, so, PH value is 11 wio〇 / 〇 ^, 10 ^,, Dipping or spraying, but not limited to this. ",", in order to form a photoresist on the insulating material, the film forming property also changes, and the defects such as the eye hole are uniform. In addition, _ in order to be formed. In addition, the film is dried by a laminator (roller, vacuum). The temperature of the bonding is from room temperature to 丨6 (rc, when pressure, if it is, it needs adhesion when it is attached. Therefore, it is not made by This is limited to. The three-layer structure of the Fuying waist is 保存ί, and it is of course the best to store at room temperature, but it must be recorded in a low-grade yarn. It should not be separated. The resin should be thermoplastic. Linear polymer. For the characteristics of ^':1#, it can also be grafted and branched. Regarding its molecular weight, the number of two knives is about 1000~500_, preferably ~5〇〇〇〇. If the molecular homogenization or electroplating nuclear adhesion liquid resistance (acid resistance) will have a reduced tilting t', it will be too large, and the stripping or dry film adhesion will have a tendency to deteriorate. Then ==== medicine Liquid resistance, prevention of thermal deformation during laser processing or abortion of the main resin composition, the following (8) and (b) substances can be obtained: (a): to ^, with A monomer of a polymerizable unsaturated group of a few acids or anhydrides. 〇, : g4^ ^ — pp., JP-A-2002-231190, and JP-A-2001-851. For example, (meth)acrylic acid, fumaric acid, laurel. 24 201146113 皮 t, crotonic acid, itaconic acid, maleic anhydride, maleic acid half vinegar, acrylic acid butyl vinegar, etc., can be used alone, Two or more types may be used in combination. Regarding the substance (b), in general, the compound is non-acidic and has (a) polymerizable unsaturated group in the molecule, but is not limited thereto. The tolerance in the step, the hardness of the cured film, and the flexibility of the ^ can be selected. Specifically, '^, there is methyl methacrylate, methacrylate, isopropyl methacrylate, decyl propylene Acid n-butyl vinegar, methyl propyl benzoic acid second butyl vinegar, = acrylic acid third butyl vinegar, thioglycolic acid secret B, methacrylic acid 2 · propyl vinegar f. Lai guess ϊ ϋ Γ Γ Γ 衍生物 衍生物 衍生物 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The three-dimensional cross-linking of the monomer having the plural money and the base, and the reactive functional groups such as the latex, the soil, the amine group, the guanamine group, and the vinyl group can be introduced into the group. j. When the resin contains silk, the amount of silk contained in the resin is preferably 触~2_'. In this case, the acid equivalent means that it has an amount of y, y, y, and weight. #酸# When the amount is too low, 'the solvent or other composition' will have a tendency to decrease. The _ _ body group ί ί 聚物 ' as long as it has the resistance to the plating core or can be imparted In addition, in order to improve various resistances, for example, methyl methacrylate, methacrylic acid (10), methyl = ^: n-butyl vinegar, methacrylic acid second butyl vinegar, methacrylic methacrylate ί An ester of vinyl alcohol, methacrylonitrile, styrene or a vinyl derivative which can be used. Further, polymerization using _ or an acid anhydride having an upper group in the molecule can also be obtained. Further, any one of the oligo- & monomer or the oligomer which reacts the monomer may be included, and any one of mono- and mono-methyl propyl acetonate 4-cyclohexanediol dimethyl two 25 201146113 = Ethylene dimethacrylate, polyethylene glycol dimercapto acrylate, phenyl) propylene dimethyl propylene surface, glycerol hydrazine Τ Τ propyl propylene 、, tri (tetra) propyl propylene trie epoxide Two pairs of dipropylene oxide shunts trisyl acrylic acid S, 2,2 bis (4 methoxy alkenyl, containing secret f _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ , ' Contains fill 5. Filler is not particularly limited ^, specifically, for example: : 虱, alumina, magnesium hydroxide, calcium carbonate, clay, kaolin, titanium oxide = lock, steal, chest, material, _, _^Titanium, ° The thickness of the other photoresist, 1' can also be broken during dispersion, and the coarse particles can be removed by sputum. Reagents, = Photopolymerizable resin (photopolymerization initiator), polymerization prevention Or in the printing process of the amine-based, thermal-polymerization, and epoxy-based products, the laser processing may be used, and the use of carbon dioxide gas = profit === material to impart peelability. The processing machine can produce UV-YAG laser suitable for people to use 知 - -3 times higher harmonics 355nm, 4 large for use, completion, laser wavelength is higher, is the better choice. ^= =====The long absorption rate material is better. Specifically, for example, f is a certain degree of assembly. That is, when the root layer is processed by the insulating layer, the energy is adjusted using the light having the laser light absorption rate adjusted and The advantages are different, so it is appropriate to respond to the condition, <circuit trench forming step> the circuit trench forming step is to form the circuit trench D3 on the insulating substrate D1; 26 201146113 step., form: line trench D3 The method is not particularly limited. Specifically, for example, > laser film D2 is formed on the outer edge substrate D1, and laser processing and die cutting processing are performed from the outer surface side of the resin coating film 2 Mechanical knives such as _machining or profile processing are used to form a circuit groove having a desired shape and depth. When a fine circuit with high precision is desired, it is preferable to use a laser to enhance it. Shooting, you can change the laser output to adjust the depth of cut freely. For the press type, for example, a fine tree press type process used in the technical field of nano-printing is used, and in addition, a beacon which uses a wire-forming via hole may be provided on the groove of the circuit.孑匕D4 〇 骤 骤 限定 限定 限定 限定 限定 限定 限定 限定 限定 限定 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路The thickness of the film D2 can also be excavated beyond the thickness of the resin film D2. The width of the circuit trench D3 formed by the dry path forming step is not particularly limited to the right laser processing, even if the line width is less than 2 Gpm. Fine circuit, two L formation 1 In addition, the depth of the circuit trench is set to be the same as the height difference of the electric power to fill the electric S circuit = material; In the case of the medium=step, in the case where the surface of the circuit trench D3 and the surface of the resin coating spoon are covered with the step 7 of the electric medium or its precursor, the inner wall surface of the through hole D4 is also subjected to the heart == The enemy media or its precursor D5, is used in the electric step An electroless electricity is formed on the part of the electricity and electricity. 3 shots "ί., electric sensitizer" can be used as long as the conventional electroless mineral catalyst is used, and other coatings are removed. The catalyst of the catalyst is generated by the catalyst after the resin film is removed. Specific examples of electric vehicles, such as: gold 27 201146113, age, or metal precursors. The method of coating the catalyst or its precursor D5, for example, a method of treating the acidic pd_Sn colloidal solution which can be treated under the condition of 丄:^, and then treating the mixed solution. Specifically, for example, the following method. It is the time of the surfactant (cleaner, blending agent) in the surfactant solution (the detergent, the blending agent), etc., which is the oil component attached to the D1 ship base D1 and the D4 ship base material D1 ^. Then, as needed, it was treated with a sodium persulfate-sulfuric acid soft soft button. Then, pickling is carried out in a sulfuric acid aqueous solution having a pH of 1 to 2 or a salt water: liquid phase solution. Next, the liquid film of the main component of the aqueous solution of the stannous solution (iv) is impregnated at a concentration of about 4 times to perform prepreg treatment on the surface of the vaporized ion edge substrate m. Thereafter, it is immersed in an acidic plating such as an acidic Pd-Sn gel containing gas f-tin and palladium-vaporized palladium and having a pH of 1 to 3, such as colloidal Pd and Sn. A redox reaction (SnCl2 + PdCl2 - SnCl4 + PcU) is generated between the palladium and the palladium. In this case, the plating catalyst, that is, metal palladium, is deposited. For the acid plating catalyst solution, a conventional acidic Pd- = a large catalyst solution or the like may be used, and a commercially available mineralizing procedure using an acidic plating catalyst colloidal solution may also be employed. For such procedures, for example, systemized vendors of Rohm and Haas Electronic Materials LLC. By the treatment of the catalysts, the precursor D5 can be plated on the surface of the circuit trench D3, the surface of the inner wall and the surface of the resin film D2. <Laminating film removal step> The film removing step ′ is a step of removing the resin coating film D2 from the insulating base material D1 subjected to the catalyst coating step. The method of removing the resin film D2 is not particularly limited. Specifically, for example, a method in which the resin coating film D2 is swollen by a solution (swelling liquid), and then the j-sealing film D2 is peeled off from the insulating base material D1; a predetermined solution (swelling liquid) is used. After the resin coating film D2 is wetted and partially dissolved, the resin coating film D2 is peeled off from the insulating substrate m; and the resin coating film D2 is dissolved by a predetermined solution (swelling liquid) 28 201146113 Ίί: IT Hai swelling liquid 'As long as it is capable of swelling the resin film D2, the color edge substrate D1 is immersed in the swelling liquid for a predetermined period of time, hi = after' Ultrasonic irradiation may also be applied during the impregnation to improve the removal efficiency. When it is peeled off, it can be peeled off with light force. Line description. When the swellable resin coating film is used as the resin coating film D2, the liquid crystal D2 is supplied as a liquid, and the insulating substrate D1 and the electric mineral or its precursor are used as long as the quality is used. Decomposition of the substance D5 = solution, and only the swellable resin film D2_ or the dissolved liquid can be used, and it is particularly limited. Further, it is preferable to use a liquid which swells the swellable resin coating film D2 to such an extent. These swelling liquids can be selected according to the swelling property = thickness. Specifically, for example, the swellable resin is coated with an elastomer such as a diene-based elastomer, an acrylic elastomer, or a polyester-based elastomer, and (a) has at least one polymerizable unsaturated group in the knives. Polymerization of at least one monomer of a few acids or anhydrides and (b) polymerization of at least one or more monomers polymerizable with the monomer (a) - a polymer lion or an age-containing composition containing the polymer When an acrylic resin containing a rebel group is formed, an alkaline aqueous solution such as a sodium chloride aqueous solution having a concentration of about 1 to 1% by weight is preferably used. Further, when an electroplating process which is treated under the above-described acidic conditions is used in the catalyst coating step, the swellable resin film D2 should preferably have a swelling degree of less than 50% under acidic conditions, preferably below 40%. In the case of a swellability of 5% by weight or more, an elastomer such as a diene elastomer, an acrylic elastomer, or a polyester elastomer, (a) having at least one polymerizable unsaturated group in the molecule a polymer resin obtained by polymerizing at least one monomer of citric acid or an acid anhydride, and (b) a polymer resin obtained by polymerizing at least one monomer polymerizable with the monomer (a) or a resin containing the polymer resin It is formed of an acrylic resin containing a carboxyl group. These swellable resin coatings can be easily swollen and peeled off by using an alkaline aqueous solution having a pH of 12:14, for example, an aqueous sodium hydroxide solution having a concentration of about 1 to 10%. Further, in order to improve the peeling property, it is also possible to irradiate with ultrasonic waves during the impregnation. In addition, it can be peeled off with light force as needed. 29 201146113 A method of swelling the film-coated fat-film 02, for example, removing the swellable resin. Insulation substrate 1) 1 is impregnated in the swelling solution for a predetermined period of time, and 2'+ is used to improve the peelability. It is preferable to irradiate with ultrasonic waves during the impregnation. In addition, when the heart is not peeled off, it can be peeled off with light force as needed. <Electroplating treatment step> f For the method of treating the ruthenium-based D2 of the ruthenium-based base material di-dielectric ore, it is possible to use, for example, an insulating layer partially covered with an electric ore contact =; month_hur 1> The material D1 is immersed in the electroless electro- ore solution, and only the part of the two-way f-catalyst or its precursor D5 is precipitated without the electric solution (electrical ore layer). Huadian = Jinyu: copper (Cu), _, The selection of the outline. The electroplating (four) consumption (four) of the age of two towels is a better choice. When the § 5 has Nl, the impurity or the cake is excellent in adhesion, and it is a precursor step. In the scale substrate D1, the wire touches the medium or its groove is formed = electric r side: it is only in the desire to form electricity. =冓=Working out no electricity—membrane•即=ΐ二= The electric film 10, because of the narrowness of the second circuit from the circuit 'will not leave excess money film between the scale circuit. This is enough to prevent short circuits or migration. <Inspection Step> In the method of manufacturing the circuit board, the method of manufacturing the circuit board may further include an inspection step, and the itii contains the money (4), and after the step of removing the slanting step, the spurt is in the first place. Or near-ultraviolet light, using the luminescence of fluorescent substances, you can check the useful d-cover = ΐ瑕 recording. Therefore, in this actual job, "manufacturing τ can form an electrical circuit with a very narrow line spacing. When forming an electrical circuit with extremely narrow line width and line spacing, as shown in Fig. 3, 201146113, the resin coating may be It cannot be completely removed and remains on the surface of the insulating substrate D1 and is formed between adjacent electrical circuits D8. At this time, an electroless plating film is formed on the portion, which causes problems such as migration or short circuit. In this case, if the inspection step is provided, the presence or absence of the coating or the removal of the coating film can be checked. FIG. 3 is an explanatory view for explaining that the resin coating contains a fluorescent substance. The inspection step of detecting whether or not the coating film is completely removed by the luminescence of the fluorescent substance. The fluorescent substance contained in the resin film D2 in the inspection step can be illuminated by a predetermined light source. Others are not particularly limited. For example, Fluoresceine, Eosine, Pyronine G, etc. ^ Use this inspection procedure to check the luminescent portion of the fluorescent substance, which is the resin film D. (2) Residual part of the residue D2a. Therefore, by removing the portion where the light is detected, the electroless plating film can be prevented from being formed on the portion. This prevents problems such as migration or short-circuiting from occurring. Slag processing step> In the method of manufacturing a circuit board of the presently known aspect, after the money processing = after application, specifically, before or after the implementation of filling the Wei, it may be further implemented. The de-doping step of the treatment process is carried out, and the excess resin is removed by the de-doping treatment. In addition, in the case of a circuit board substrate which is prepared to have the '^ soil plate', the un-formed t-mine of the insulation can be formed. ^ Part of the surface of the secret '峨 ^ its upper layer of the secret ^ β ' can also be carried out to check the bottom of the layer of the treatment. This can be removed; ^. In addition, the test without mosquitoes (4) 2 and 2. In particular, S 'for example: immersed in a treatment with a too strong acid solution., r = the above step, the circuit substrate mo shown in Fig. )) is formed. [1st - 2th embodiment 〕 Yan Lei implementation shows that the formation of electricity on a flat insulating substrate The present invention is not limited to this. Specifically, it can be a method for manufacturing a three-dimensional circuit substrate in which the electric circuit of the electric circuit is configured. 31 201146113 Explanation of the manufacture of the three-dimensional circuit of the i--2 embodiment of the Kina D5i, the surface of the three-dimensional insulating substrate Z with high and low difference parts shouted resin fine D2. Correction, the age axis as a thief Forming the three-dimensional insulating substrate D51 can be used to manufacture a three-dimensional circuit. Specific examples of the resin material used to prepare the resin molded body include styrene, poly-resin, _resin, poly-resin, The method of forming the grease film D2 is not particularly limited, and specifically, the same formation method as that of the first to the first embodiment.

纽ΪΪ也如,4⑼所示的,以該樹脂覆膜D2的外表面為基準形 ^ D2之厚度以上的深度的電路溝槽D3。電路I m並無制限定。具體㈣,例如:_第1〜1實^ 方法等。該電路溝槽D3可限定出利用無電解!铲 =無電解電賴的部分,亦即,可形成電氣電路的部分^ 该步驟相當於電路溝槽形成步驟。 卜 接著,如圖4(C)所示的,在該電路溝槽!^的表面以及 in槽m的該樹脂覆膜m的表面上披覆電鑛觸媒或驅 物D5。電鑛觸媒或其前驅物D5的彼覆方法並無特別限定。呈而 3 ’例如:與該第Η實施態樣同樣的方法等。 =觸媒披覆步驟。侧該觸媒披覆處理,如圖4(〇所示; 。絲面上以職旨細D2 _上_鍍觸媒 眩土如圖4(D)所示的,從該立體絶緣基材D51將該樹脂覆 =2除去。就,便可只在該立體絶緣基材收的已形成 溝槽D3的部分的表面上殘留電鑛觸媒或其前驅物D5。另 披,於該樹脂覆膜D2的表面上的電侧媒或其前驅物D 於該樹脂覆膜D2之上的狀態下,與該樹脂覆膜D2 一併被除去。 32 201146113 2笛除^該巧旨f膜D2的方法並無特別限定。具體而言 ,例如: 1貫施態樣同樣的方法等。另外,該步驟相當於覆膜除 去步驟。 ㈣Hi圖4(Ε)所示的’對已除去該樹脂覆膜D2的立體絶緣 二他、貫施無電解電鑛。藉此,錢存該電鑛觸媒或其前驅物 m上升滅無電解電錄m D6。亦即,在已形成該電路溝槽 I^通孔D4的部分上形成無電解電麵D6作為電氣電路。 二】,電鏡,D6的形成方法並無特別限^。具體而言’例如.;與 Ιίϋ貫祕翻制軸方法等。糾,該步馳當於電鑛 巧據上述各步驟’如圖4(Ε)所補’便可形成電路基板·, 體絶緣基材D51上形成電氣電路D6。如是形成 即使絶緣基材上所形成之電氣電路的線寬以及線 夠形成高精度的電氣電路。另外’本實施態樣之 處=立體電路基板的具有高低差部的面上,也能夠正 確且簡易地开^成電路。 〔第2實施態樣〕 ^發明更關於-種f路基板以及魏路基板的製造方法。 太却話ί携帶式資訊終端裝置、電腦以及其周邊裳置、各種 貝的電氣裝置快速地朝高度魏化發展。伴隨於此, 等電氣裝置上所搭載之電路基板而言,其電氣電路也被要求 更2二步南密度化。為了滿足該等電氣電路的高密度化的要求,吾 ^希求-種㈣正4地形成線寬以及制__電氣電路 電路之間的部分的寬度)更狹窄的電氣電路配線的方法。在^戶 化的電路配射,容綠生配線_短路或遷料問題。山又 姑上ί ϊίίί ϊί製造方法,.彻減去法或加錢在絶緣基 ^形成電就電路荨方法已為人所習知。減去法是將欲在 疊板,表©上形成魏電路的部分以外的金屬耻減去〕,以形 成電氣電?的方法。另—方面’加成法是錢緣基材上對欲形4 路的部分實施無電解電鍍,以形成既定電路的方法。 / 33 201146113 減去法,係ϋ刻金屬箔張堆疊板表面的金屬箔,在欲形成電氣 電路的部分殘留金屬箔,並除去其他部分的方法。若利用這個方 法,則被除去部分的金屬會被浪費掉,增加製造成本。另一方面, 加成法則是在欲形成電氣電路的部分實施無電解電鍍以形成金屬 配線。因此’金屬不會被浪費掉,無端被消耗掉的資源較少。從此 點來看,加成法是較佳的電路形成方法。 參照@ π制_習知代表性加成法之—的全加成法形成由 金線所構成的電_路的方法。另外,圖u係示意剖面圖, 用來:兒明個習知的全加成法形成金屬配_各步驟。 趟如® 11(A)所示的’在形成有穿通孔A101的絶緣基材 =〇的表面上披覆電鍵觸媒A102。另外,絶緣基材Al〇〇的表面 著’如圖Π(Β)所示的,在披覆有電鑛觸媒A102 的、:色=材A1GG上形成雜層趟3。接著,如圖11(Q所示的, =形成既定電路圖案的光罩A11〇對該光阻層A1〇3進行曝光。 步如圖11(D)所示的,對經過曝光的光剔 ίΓ4。然後,如圖11(E)如所示的,實施無電^電 tfm在顯影所形成的電路圖案鳩4的表面以及穿 緣Μ Α10Γ) ^面形成金屬配線A105。藉由實施上述各步驟,在 、’、:材00上形成由金屬配線A105所構成的電路。 覆電⑽的整個表面上彼 對光阻層A103推一翻旦4日產生乂下的問題。亦即’當以高精度 鍍。然而,當未紐未爐刺部分形成電 示的,可能合乂 士 ·?^^層3進行顯影時’如圖12所 αι〇6。這是因9為在分殘留多餘的電鍍部分 所造成的。多餘的Α11 表面上彼覆電鑛觸媒Al02 移等問題。該等短路^遷移問;電路之間的短路或遷 電路時更容f發^。另外,胃 巧線寬以及賴隔較狹窄的 知的全加成法所形成的電卜路意剖面圖,用來說明利用習 另外關於與上述電路基板製造方法不同的製造方法,例如: 34 201146113 號公報以及曰本細號公報 ΐΠϋ7:134996 揭7^下另—種加成法。 練可溶性㈣2感光性_=S= 著對隔著·既定電關細光罩進行曝光。接 ϊ人感光性樹脂層進行顯影。接著,讓觸媒吸附在 可、ii二2 /¾ 整個表面上,之後用驗性溶液溶解具有驗 鍍,在觸媒存在的部分上正確地形成電路。之後貝施無電解電 ^外’日本制昭58-獅94號公報揭示以下的方法。 Μ瓦ϋ!色、緣基板(絶緣基材)上塗佈樹脂保護膜(第1步驟)。 舰緣絲上彻频加工或餘光束的 riL妾者,讎該髓麵除去魏緣基板上的活性化層r?口 在溝槽以及穿通孔的_面上殘留活性化層(第 ^ 制顿倾朗電_選雜地在該經過 ii溝?穿通孔_壁面上形成導電層(第5步驟)。 ;、、、、而,右根據日本特開昭57_134996號公 必須形成溶劑溶解性不同的2種感紐樹脂層,另外°,麵影時也 =顯影’再者’在讓觸媒吸附之後必須用鹼性溶 液命解第2感光性樹脂,故製造步驟非常繁雜。 另外’日本制昭58_186994號公報:在 佈熱硬化倾脂靖其加驗极切g rnm m mwlll 硬化咖时#雜護膜的熱 更化咖曰就其麵而δ亚無特別記載。一般的熱硬化性樹脂具 35 201146113 備良好的耐溶劑性,故單靠溶劑難以 脂與樹脂基材的密合性太高,故欲在樹=卜,該等熱硬化性樹 膜的碎片殘留,而能夠正確地只將保^=表9面上完全沒有保護 若為了充分剝離而使用強力溶劑或長時、=去’疋很困難的。另外, 形成導。另外,當細部分上 次分散到溶劑中。如是再次分散_^中=媒會再 在樹脂基材表面上,該部分便可能合夕電鑛觸媒’會再次附著 用日本特開昭58—186994 餘的,膜。因此若利 正確輪躺電路。 不的方法’獅以形成具備 再者’當個上述f知各種電路基 電氣電路的金屬配線容易贱緣狹小’會有構成 剝離係使奸裝置的可電路溝槽剥離的問題。電路 氣電======_跑所搭載的電 的基板上’可安裝較大 ^'〇 #成底板部分的金屬配線可能會從絶緣基材剝 狹=== 會χ到外力時,構成底板部分的金屬配線可能 路的線寬以及線間隔變狭小,上述電路損傷: 36 201146113 今屬=解Γ題i吾人考慮採用擴大電路配線的線寬,補強 與絶緣基伽接觸碰,哺高金屬配線 =絶緣基_⑨合㈣方法。_,_綠卻無法使電路高密度 化0 目關題,本發明之目的在於提供—觀路基板,即使 好盘當it所=成之電氣電路的線寬以及賴隔很狹小,絶緣基 材=氣電路的密合性也很高,電氣電路不易受到損傷。另外,更 以k供该電路基板的製造方法為目的。 人’為了提高絶緣基材與電氣電路的密合性,遂著眼於 :色緣=組成。當使用未含有填料的絶緣基材時,由於利用雷射 路溝槽的表面未含有填料,故較易使其 ί雷ϊ r、i二一ίΓ吕,表面平滑的電路溝槽,比較容易形成電 fii•疋不έ會使·雷射加工或機械加謂形成之電路溝 槽的表面的平滑性降低的填料。 ㈣m發人發現’當朗未含树料舰緣基材時,對該 會產生在電路溝槽上未形成作為電氣電路用3二 地方或發生所形成之電鍍層剝落的現象。 ,後,本發明人推斷該現象是因為以下的原因所造成的。 表面路溝槽的表祕平滑,故即使在該魏溝槽的 表面彼设觸媒金屬,也無法充分披覆,而會脱落。 士再者,由於絶緣基材未含有填料,故熱線膨脹係數很大。具體 ,& ’絶緣基材容易因為溫度變化而變形,而該變形對電氣電路 施加的應力超過電氣電路與絶緣基材的密合力。 装彳f ’當利用雷射加工或機械加工形成電路溝槽時,由於絶緣 土材未3有填料,故絶緣基材的耐熱性較低,會因為熱而發生溶化 現象’電路溝槽的形狀會變形。亦即,電氣電路所受到的 形的形狀而變得不均勻,這是因為電氣電路所受ί的應5 超過笔,電路與絶緣基材的密合力所造成的。 於疋,本發明人,為了讓絶緣基材含有使利用雷射加工或機械 37 201146113 ΐίΓ成之電路溝制表_平滑性降低㈣料,遂狀以下之 從今之電路基板包含:在表面上形成樹脂覆臈, 大以及深度的電路溝槽,在該電路溝二表面=及:= 成的絶緣基材,以及對該絶緣基材實 ===== 路,該絶緣基材含有填料。 所电锻所形成的電乳電 利用上述構造’便可製得即使絶緣基材上所形成之電 線,以及線間隔很狹小,絶緣基材與電氣電路的密合性」 電氣電路不易受到損傷的電路基板。另外,該電氣°呈二二而 是藉由實賊無電解電綱戦在概絲的電^^體而舌’ 為以緣基材與電氣電路的密合.,推斷是因 首先,在形成該電路溝槽時,舰緣基材 槽的表面會因為填料而ϊ r電,防止利用無電瞻在該電路 路溝=====高顺^ :r。是’便可防止該變形使電 再者’在利用雷射加工或機械加工 基材含有·,⑽輸杨鳴_高,^ =絶緣 即,由於能夠防止電路溝槽的形狀變开),故可使電形。亦 應力平均’進而能夠防止電氣電路剥離。 ’、電路所文到的 38 201146113 抑ΛΛ t上可知,吾人可製得—種即使絶緣基材上所形成之電氣電 ,的線I以及線間陳狹小,絶緣基材與電氣電路的密合性也报 南’而電氣電路不易損傷的電路基板。 朴另外,該填料的含有量相對於該絶緣基材宜為10〜90質量〇/〇。 糟由該等構造,便可製得即使魏f路的線寬缝隔很狹小, 絶緣基材與電氣電路的密合性也很高的電路基板。 另外,該填料的平均粒子徑宜為〇·〇5〜1〇μιη。利用該等構造, 便可製得即使電路的線寬以及關隔很狹小,絶緣基材與 電路的密合性也很高的電路基板。 '、八 另外,該填料的平均粒子徑相對於該電路溝槽的寬度、該電路 溝槽的深度以及互觸接之電路溝槽與電路雜之間的部分的寬 ,當中的最小駐為G.25〜50%。_該等構造,便可製得即使電 氣電路的線寬以及線間隔很狹小,絶緣基材與電氣電路的 很南的電路基板。 ^另外,遠填料宜為無機微粒子。利用該等構造,便可製得即使 電路的線覓以及線間隔很狹小,絶緣基材與電氣電路的密合性 十很高的f絲板。缺因為在上賴制#巾例如舰緣基材二敎 職係數變小所造成的影響變大_係。亦即,絶緣基材更不易‘因 為溫度變化而變形’所軸之電氣電路所受到的應力變得更少。因 此,能夠防止該變形對電氣電路施加應力而使電氣電路剝離。 带另外,δ亥電氣電路宜至少包含線寬5〜3〇pm的部分。當電氣 電路包含該線寬較狹窄的部分時,便可得到具備充分高密度彳曰匕之電 $的,路基板。另外,當電氣電路包含該線寬較狹窄的部分時,一 $而言,電氣電路與絶緣基材的接觸面積較狹窄,電氣電路與絶緣 基材的密合性會變低,電氣電路變容易從絶緣基材剝離。藉/由上述 構造,便可得到即使電氣電路包含上述線寬較狹窄的部分7電氣電 ,與絶緣基材的密合性也夠高,而能夠防止電氣電路從絶緣基材$ 離的電路基板。 另外,本發明另一態樣之電路基板的製造方法包含:在絶緣基 材表面上形成樹脂覆膜的覆膜形成步驟;從該樹脂覆膜的外表面& 39 201146113 二:械加工—成具備所期望之形狀 及該樹的表面以 的電鍵處理步驟;在該覆膜形成步c 狹窄及線間隔較 電氣電路不綱合性很高’ ί ^發_第2的實施態樣包含以下技術内容。 從該i二咖^:種電路基板’包*:在表面上形成樹脂覆膜, 所形成的%披屬’類絶絲翊脂覆膜剝離 氣笏ί:ί.ίΐ二=緣____成的電 的含嶋’其中該填料 板,2所記載之電路基Also, as shown in Fig. 4 (9), the outer surface of the resin film D2 is a circuit groove D3 having a depth equal to or greater than the thickness of the reference D D2. The circuit I m is not limited. Specifically (4), for example: _ 1st to 1st ^ method. The circuit trench D3 can define a portion that utilizes an electroless shovel = electroless galvanic, that is, a portion that can form an electrical circuit. This step corresponds to a circuit trench forming step. Next, as shown in Fig. 4(C), an electric ore catalyst or a driver D5 is coated on the surface of the circuit trench and the surface of the resin film m of the in-groove m. The method of covering the electrocaloric catalyst or its precursor D5 is not particularly limited. For example, the same method as the third embodiment is used. = Catalyst override step. The catalyst is coated on the side, as shown in Fig. 4 (〇; the surface of the wire is D2 _ upper _ plated catalyst sorrow as shown in Fig. 4 (D), from the three-dimensional insulating substrate D51 The resin coating = 2 is removed. Thus, the electrocaloric catalyst or its precursor D5 can be left only on the surface of the portion of the three-dimensional insulating substrate where the groove D3 has been formed. The electric side carrier or the precursor D on the surface of D2 is removed together with the resin coating film D2 in a state of being over the resin coating film D2. 32 201146113 2 Detachment method for the f film D2 Specifically, for example, the same method as the above-described method is used. This step corresponds to the film removal step. (IV) The pair of the resin film D2 shown in Hi Figure 4 (Ε) The three-dimensional insulation of the two, the application of electroless ore. By this, Qian Cun the electric ore catalyst or its precursor m rises out of the electroless recording m D6. That is, the circuit has been formed An electroless electric surface D6 is formed on the portion of the hole D4 as an electrical circuit. Second, the electron microscope, the formation method of the D6 is not particularly limited. Specifically, 'for example; The method of turning the shaft, etc., correcting, the step is to form the circuit substrate according to the above steps 'as shown in Fig. 4(Ε), and the electric circuit D6 is formed on the bulk insulating substrate D51. Even if the line width and the line of the electric circuit formed on the insulating substrate are sufficient to form a high-precision electrical circuit, the present embodiment can accurately and easily display the surface of the three-dimensional circuit substrate having the step portion. [Second Embodiment] The invention further relates to a method for manufacturing an f-channel substrate and a Weilu substrate. The portable information terminal device, the computer, and the surrounding area, various electric appliances With the rapid development of the device, the electric circuit of the circuit board mounted on the electric device is required to be further densified in two steps. In order to satisfy the high density of these electric circuits. In the case of the electric circuit wiring which is narrower, it is required to form a narrower electrical circuit wiring in the form of a line width and a width of a portion between the electric circuit circuits. In the household circuit, the green line wiring _ short circuit or relocation problem. The mountain is also on the ί ϊ ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί The subtraction method is a method of subtracting the metal shame which is to be formed on the stacking plate and the surface of the Wei circuit to form an electrical circuit. The other aspect 'addition method is a method in which a portion of the four-way portion of the Qianyuan substrate is subjected to electroless plating to form a predetermined circuit. / 33 201146113 The subtraction method is a method of engraving a metal foil on the surface of a metal foil sheet stacking sheet, leaving a metal foil in a portion where an electrical circuit is to be formed, and removing other portions. If this method is used, the removed metal will be wasted, increasing the manufacturing cost. On the other hand, the addition rule is to perform electroless plating on a portion where an electric circuit is to be formed to form a metal wiring. Therefore, the metal will not be wasted, and the resources that are consumed without any reason are less. From this point of view, the additive method is a preferred method of circuit formation. Referring to the @ π system _ the conventional additive addition method, the full addition method forms a method of forming an electric path composed of gold wires. In addition, Fig. u is a schematic cross-sectional view for the steps of forming a metal compound by a conventional full addition method. The electric contact catalyst A102 is coated on the surface of the insulating substrate 〇 formed with the through hole A101 as shown in Fig. 11 (A). Further, the surface of the insulating substrate Al is formed as shown in Fig. Β(Β), and a hetero layer 趟3 is formed on the color material A1GG coated with the electrocaloric catalyst A102. Next, as shown in FIG. 11 (Q), the mask A11 that forms a predetermined circuit pattern is exposed to the photoresist layer A1〇3. As shown in FIG. 11(D), the exposed light is collimated. Then, as shown in Fig. 11(E), the metal wiring A105 is formed on the surface of the circuit pattern 鸠4 formed by the development and the surface of the circuit pattern 形成4 formed by the development. By performing the above steps, a circuit composed of the metal wiring A105 is formed on the material 00. On the entire surface of the power-on (10), the photoresist layer A103 is pushed for four days to cause a problem of underarming. That is, 'when plated with high precision. However, when the portion of the spurs is not formed, it may be that the layer 3 is developed as shown in Fig. 12 as αι〇6. This is due to the fact that 9 is the excess plating portion of the residue. On the surface of the excess Α11, it is covered by the electro-catalyst Al02. These short-circuit ^ migration problems; short circuit between circuits or when the circuit is moved more f. In addition, the cross-sectional view of the stomata line width and the well-added full-addition method which is narrower is used to explain the manufacturing method different from the above-mentioned circuit board manufacturing method, for example: 34 201146113 The bulletin and the 曰本细号 bulletin ΐΠϋ7:134996 reveal 7^ another kind of addition method. Practicing Soluble (4) 2 Photosensitivity _=S= Exposure is performed on a predetermined light-shielding mask. The developer is exposed to a photosensitive resin layer for development. Next, the catalyst is adsorbed on the entire surface of the ii 2/3⁄4, and then dissolved by the test solution to form a circuit, and the circuit is correctly formed on the portion where the catalyst exists. In the following, the following method was disclosed in the Japanese version of the Japanese version of the Japanese Patent No. 58-Lion No. 94. A resin protective film is coated on the color and edge substrate (insulating substrate) (first step). On the ship's edge wire, the riL of the residual beam or the residual beam is removed, and the activation layer of the activation layer on the surface of the core is removed from the groove on the groove and the _ surface of the through hole (the second layer) The conductive layer is formed on the wall of the through hole _ the selected layer (the fifth step). ???,,,,,,,, according to Japanese Patent Laid-Open No. 57-134996, it is necessary to form a solvent having different solubility. In the case of the sensation of the sensation of the sensation, it is necessary to use the alkaline solution to solve the second photosensitive resin after the adsorption of the catalyst. Therefore, the manufacturing process is very complicated. Bulletin No. 58_186994: In the heat-curing resin, the heat-clearing resin is used in the heat-removing resin. The heat-reducing curry of the miscellaneous film is not specifically described. 35 201146113 With good solvent resistance, it is difficult to adhere the resin to the resin substrate by the solvent alone. Therefore, in the tree, the fragments of the thermosetting tree film remain, and it can be correctly Guarantee == No damage on the surface of Table 9 If strong solvent or long time is used for sufficient peeling = It is very difficult to go. In addition, the guide is formed. In addition, when the fine part is dispersed into the solvent last time, if it is dispersed again, the medium will be on the surface of the resin substrate, and the part may be combined with the electric ore. The catalyst will be attached again with the Japanese special opening 52-186994. The film is therefore the right way to lie down the circuit. The method of the lion is to form a metal that has the above-mentioned knowledge of various circuit-based electrical circuits. The wiring is prone to a narrow edge, and there is a problem that the circuitable trench that constitutes the stripping system is peeled off. The circuit gas is ======_The electric board on which the battery is mounted is 'installable larger^'〇# The metal wiring in the bottom plate portion may be peeled off from the insulating substrate. === When the external force is applied, the metal wiring forming the bottom plate portion may have a narrow line width and a narrow line spacing. The above circuit damage: 36 201146113 iI i consider the use of expanded circuit wiring line width, reinforcement and insulation base gamma contact, feeding metal wiring = insulation base _9 (4) method. _, _ green can not make the circuit high density 0 target, The object of the present invention is to provide a view Board, even if the disk is wide and the wiring is very narrow, the insulation substrate = gas circuit is very close, the electrical circuit is not easily damaged. In addition, the circuit is provided for k. The purpose of the method for manufacturing a substrate is to reduce the adhesion between the insulating substrate and the electrical circuit, and to focus on: color rim = composition. When using an insulating substrate that does not contain a filler, due to the use of a laser channel groove The surface does not contain fillers, so it is easier to make it ί雷ϊ r, i Γ Γ , ,, smooth surface circuit trenches, it is easier to form electric fii•疋不έ·Laser processing or mechanical addition forming circuit The filler with reduced smoothness of the surface of the groove. (4) When it is found that the material of the ship's edge is not included in the circuit groove, it is not formed on the circuit trench as the electrical circuit. The phenomenon of peeling off the plating layer. After that, the inventors infer that the phenomenon is caused by the following reasons. The surface of the surface groove is smooth, so even if the catalyst metal is provided on the surface of the Wei groove, it cannot be fully covered and will fall off. In addition, since the insulating substrate does not contain a filler, the coefficient of thermal linear expansion is large. Specifically, the &' insulating substrate is susceptible to deformation due to temperature changes that exceed the stress applied to the electrical circuit by the electrical circuit and the insulating substrate. When the circuit trench is formed by laser processing or machining, since the insulating soil material has no filler, the heat resistance of the insulating substrate is low, and melting occurs due to heat. The shape of the circuit trench Will be deformed. That is, the shape of the electric circuit is unevenly formed because the electrical circuit is subjected to the adhesion of the pen to the insulating substrate. In the present invention, in order to allow the insulating substrate to contain a circuit for the use of laser processing or mechanical processing, the circuit board of the present invention includes: on the surface Forming a resin coating, a large and deep circuit trench, on the surface of the circuit trench = and: = an insulating substrate, and the insulating substrate is a ===== way, the insulating substrate contains a filler. The electric milk formed by the electric forging can obtain the electric wire formed on the insulating base material and the narrowness of the line spacing, and the adhesion between the insulating base material and the electric circuit can be obtained by the above structure." The electric circuit is not easily damaged. Circuit board. In addition, the electrical ° is two or two, but by the thief electroless electric 戦 in the wire of the wire and the tongue 'being the edge of the substrate and the electrical circuit. It is concluded that the first is in the formation When the circuit is grooved, the surface of the ship's substrate groove will be electrically charged due to the filler, preventing the use of no electricity in the circuit groove ===== high cis ^ : r. It is 'can prevent this deformation from making electricity again' in the use of laser processing or machining of the substrate containing, (10) losing Yang Ming _ high, ^ = insulation, that is, because the shape of the circuit trench can be prevented from opening) Can make electricity. The stress is also averaged to prevent the electrical circuit from being peeled off. ', the circuit to the 38 201146113 ΛΛ 上 上 ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ ΛΛ The circuit board that is also reported to the south and the electrical circuit is not easily damaged. In addition, the content of the filler is preferably from 10 to 90% by mass based on the insulating substrate. With such a structure, it is possible to obtain a circuit board in which the adhesion between the insulating base material and the electric circuit is high even if the line width slit of the Wei f road is narrow. Further, the average particle diameter of the filler is preferably 〇·〇5 to 1〇μιη. With these structures, it is possible to obtain a circuit board having high adhesion between the insulating substrate and the circuit even if the line width and the gap of the circuit are narrow. In addition, the average particle diameter of the filler is relative to the width of the circuit trench, the depth of the trench of the circuit, and the width of the portion between the circuit trench and the circuit impurity that are in contact with each other, and the minimum resident G .25~50%. With these configurations, it is possible to obtain a circuit board in which the insulating substrate and the electrical circuit are very south, even if the line width of the electric circuit and the line spacing are narrow. ^ In addition, the far filler is preferably inorganic fine particles. With these configurations, it is possible to obtain a f-wire plate having a high adhesion between the insulating substrate and the electric circuit even if the winding of the circuit and the line spacing are narrow. The lack of influence is caused by the smaller the coefficient of the second base of the ship, such as the ship's edge substrate. That is, the insulating substrate is less likely to be less stressed by the electric circuit of the shaft which is deformed by the change in temperature. Therefore, it is possible to prevent the deformation from stressing the electric circuit and peeling off the electric circuit. In addition, the δHai electrical circuit should preferably include at least a portion having a line width of 5 to 3 pm. When the electrical circuit includes a portion having a narrow line width, a circuit substrate having a sufficiently high density of electricity can be obtained. In addition, when the electrical circuit includes the narrow portion of the line width, the contact area between the electrical circuit and the insulating substrate is narrow, the adhesion between the electrical circuit and the insulating substrate is lowered, and the electrical circuit becomes easy. Peel off from the insulating substrate. By the above configuration, it is possible to obtain a circuit board which can prevent the electrical circuit from being separated from the insulating substrate even if the electric circuit includes the electric power of the portion 7 having a narrow line width. . Further, a method of manufacturing a circuit board according to another aspect of the present invention includes: a film forming step of forming a resin film on the surface of the insulating substrate; and an outer surface of the resin film & 39 201146113 2: Mechanical Processing - a step of performing a key switch having a desired shape and a surface of the tree; the step of forming the film c is narrow and the line spacing is not uniform with respect to the electrical circuit. The embodiment of the second embodiment includes the following technique content. From the i two coffee ^: kind of circuit substrate 'package*: a resin film is formed on the surface, and the formed % of the genus is a kind of smear-like blush film peeling gas 笏: ί. ΐ two = edge ____ The electrical enthalpy of the formation of the circuit board

柄,項2—4.如請求項^1〜2 —3中任1項所記載之電路A ㈣該填料的平均粒子徑相對於該電路溝槽的寬度、該電路J i$trm接5=。路溝-電路―分的寬度 凊求項2—7. 一種電路基板的製造方法,包含:在絶缘芙材表 面上形成樹脂覆膜的覆卿成步驟;從該樹脂覆膜的外表面^對^ 201146113 絶緣基材it行祕加工韻械加工祕^ 深度的電路溝槽的電路溝槽形成步驟;在該電 2膜剝離步驟;以及對該樹脂覆膜已經剝離的 絶緣基材心無電解電_電佩理步 使用的該絶緣基材含有勸4。 *錢跡成步驟中所 的缞—餅使絶絲材上卿狀電氣電路 電路基板。另外,更提供該電路基板的製造方法。⑽ 以下’説明本發明之實施態樣,惟本發明並 =,上披覆觸媒金屬,從該絶緣基材將 [第2-1實施態樣] 法。3孫1^本發明的第2—1實施態樣之電路基板的製造方 ;的=一圖’用來說明製造第w實施態樣之= 首先,如圖7(A)所示的,在絶緣基材A1的 =A2。另外,該步驟相當於覆 二/成2曰, 含有^。具體而言,例如,含有樹脂與填緣基材A1 A1上⑼所補’在形成有該樹脂覆膜則絶緣美材 成具“望:= 及=面電=加=機:二形 面為灵準,切加或機械加工’係以該樹脂覆膜Α2的外表 i溝ίϊίϋ1。上打孔以形成貫通孔a4。另外,該步驟相當於電 41 201146113 接著,如圖7(C)所示的,在該電路溝挿A3 成該電路溝槽A3的該樹脂覆膜A2的表面曰上彼覆‘媒金1屬及以 ^媒)A5。此時,由於在該絶緣基材A1 ±形成該貫通孔μ,(巧 $通孔A4 _絲社也倾覆觸媒A = 當於觸媒彼覆步驟。 乃「邊步驟相 接f ’如圖7(D)所示的,從該絶緣基材A1將該樹脂覆膜Handle, item 2-4. Circuit A as recited in item 1 of claims 1 to 2 - 3 (4) The average particle diameter of the filler relative to the width of the circuit trench, the circuit J i$trm is 5= . The groove-circuit-divided width request item 2-7. A method of manufacturing a circuit board, comprising: a step of forming a resin film on the surface of the insulating material; and an outer surface of the resin film ^ 201146113 Insulation Substrate It is a circuit groove forming step of a deep circuit trench; in the electric 2 film peeling step; and the electroless 2 in the insulating substrate has been electrolyzed The insulating substrate used in the electro-optical step contains the persuasion 4. * The money is used in the steps of the 缞-cake to make the wire on the Qingdian electrical circuit circuit board. Further, a method of manufacturing the circuit board is further provided. (10) Hereinafter, the embodiment of the present invention will be described, but the present invention is a method in which the catalyst metal is coated on the insulating substrate from the [2-1th embodiment]. 3 Sun 1 ^ The manufacturing method of the circuit board of the second embodiment of the present invention; = a picture 'for explaining the manufacturing aspect of the wth embodiment> First, as shown in Fig. 7(A), Insulation substrate A1 = A2. In addition, this step is equivalent to covering 2/2, containing ^. Specifically, for example, the resin and the edge-filling substrate A1 A1 are complemented by (9). When the resin film is formed, the insulating material is formed into a product: ": = and = surface electric = plus = machine: the two-shaped surface is The alignment, the cutting or machining process is performed by the outer surface of the resin coating Α2, and the through hole a4 is formed by punching. The step is equivalent to the electric 41 201146113. Next, as shown in Fig. 7(C) In the circuit trench A3 is formed on the surface of the resin film A2 of the circuit trench A3, and the surface of the resin film A2 is covered with a 'media 1 and a dielectric> A5. At this time, since the insulating substrate A1 is formed. The through hole μ, (smart $ through hole A4 _ silk also dumps the catalyst A = when the catalyst is covered by the step. The "steps are connected f" as shown in Fig. 7 (D), from the insulating base Material A1 to coat the resin

If·?絶緣基材A1的形成有該電路溝槽A3或該 表面上峨覆之麟麵A5,在似於該樹脂覆ϋ 於覆膜剝^驟與_覆膜Α2 —倾除去。糾,該步驟相當 A1 所示的’對频職膜Α2已繼之絶緣基材 铲d解電?。糟此,*殘存有該觸媒金屬Α5的部分形成電 ” 形成有該電路溝槽A3或該貫通孔A4的部分上 為Ϊ亂電路的電鍵層A6 °然後’電氣電路可由該電鑛層A6 苴膜層更再次實施無電解(填滿電锻),使 體 圖7(Ε)所示的,亦能以填埋整個 = J方式形成由電鑛層Α6所構成的電氣電路,使該 :、 土U電氣電路的高低差被消除。另外,該步驟相當於電鏡 處理步驟。 ,由上述各步驟’便可形成如圖所示的電路基板Α10。如 3 路基板A1G’即使在絶緣基材上所形成之電氣電路的線 ϋίϊΐ減窄,絶緣基材與魏電路的密合性植高,電氣 电路不易損傷。 月b夠提间上述絶緣基材與魏的密合性賊果,推斷是因 為以下的機制的關係。 细在第2—1實施態樣中,圖8係該電路溝槽形成步驟後 理步驟中的絶緣基材A1的狀態説明圖。圖8⑷顯示該 理牛驟後的絶緣基材A1的狀態’ W ’顯示該電鍍處 理步驟中的絶緣基材A1的狀態。 42 201146113 从該電路溝槽形成步驟後的絶緣基材A1,如圖8(A)所示 掸妙^色緣基材A1實施雷射加工或機械加工,以形成電路溝 如圖雜示的,絶 ;:Α3 3舍媒披覆步驟在該電路溝槽Α3的表面所彼覆之觸媒 、,屬會因為3亥被小凹凸的關係而不易脱落。 電鍍ίΐ步_之後’在該 政嗜描施…、电解電鍍,猎此,如圖8(Β)所示的,在該電 路^ A3 成作為電氣電路的電錢層Α7。由於能夠防止在該電 電鐘i 所披覆的觸媒金屬脱落,故能夠充分地防止該 路、、聋52„凹凸_定效*,便可提高在絶緣基材的電 路溝槽上所形成之電氣電路與絶緣基材的密合性。 絶緣基材含有填料,故熱膨脹係數很小。因此, if度變化而變形,所形成之電氣電路所受_應 電路剝離。°疋 該變形使電㈣路所受刺應力導致電氣 基材利f f射加卫或機械加I形成魏溝槽時,由於絶緣 的現象。因基材的耐熱性較高’不易發生因為熱而溶化 庫力^路溝槽的形狀變形’故可使電氣電路所受到的 應刀十均,進而能夠防止電氣電路剝離。 路的人可製得—種即使躲歸上卿成之電氣電 損傷的電路基板。亦即,對該電鑛層A?實L 異滿电錢所製付之電氣電路不易從絶緣基材剝離。 時發現’#使用未含有填料的絶緣基材a21 樣同樣的方法形成電氣電路,在電路溝 曰上也會產生未形成作為電氣電路之電鑛層的部位,或是發生所形 43 201146113 成之電鑛層剝離的現象。推斷係因為以卞的原因。 另外’圖9係使用未含有填料之絶緣基材A21日寺絶緣基材Α2ι 的狀態説關。® 9(A)以及® 9(B)係分卿細8(A⑽及圖8(b) 的圖式。 首先,雷射加工或機械加工使絶緣基材A21上所形成之電路 溝槽A23的表酿平滑,在該電路溝槽A23的表面上坡覆 屬,會變得無法充分地彼覆而會脱落。 之後,在將树知覆膜A22剝離之後實施無電解電鍍,如 =的’,於在該電路溝槽A23的表面上有未披覆到觸媒 槽A23上會訂未形成料魏電路之電鎪 另外,由於絶緣基材A21未含有填料,故熱線膨脹係數變 很大。因此’絶緣基材A21容易因為溫度變化而變形,該 ,鍍層A25所施加之應力,會超過電鑛層A25與絶緣基材a/ 密合力,進而形成電鍍層A25的剝離部分A25a。 ㈣機械加工形成電路溝槽A23時,由 於,·、色、,彖基材A21未3有填料,故絶緣基材A21㈣敎性 合 發生因為熱而溶化的現象,進而導致電路溝槽A23的形狀變: =此,電鍍層A25所受到之應力會因為該變形形狀而變得^, ,層A25所受到之應力超過電鍍層A2S與絶緣基材A2『 力的部分,便會形成電鍍層A25的剝離部分A25a。 勺在σ —二二為,氣電路之電鑛層Α25未形成在絶緣基材 Α21,電路溝槽Α23上,反而剝轉了。亦即,當再 f貫施填滿電鍍時,所得到之電氣電路容易從絶緣基材“ 以下,説明本實施態樣的各構造。 的基:緣基材A1含有填料。具體而言’例如:含有樹脂與填料 關於該樹脂’只要是構成可用來製造電路基板的 的樹脂即可’其他並無特別限定。具體而言,例如:魏 201146113 烯酸樹脂、聚碳酸_、聚醯 型環氧樹脂、雙盼f型環氧樹脂、雙盼s:袁氣yr ,:苯__環氧樹脂、絲苯騎。J=rThe insulating substrate A1 is formed by the circuit trench A3 or the surface of the insulating surface A5 which is coated on the surface, and is removed by the resin coating on the film peeling and the film coating. Correction, this step is equivalent to the A1 shown in the 'frequency of the film Α 2 has been followed by the insulating substrate shovel d electricity? . In this case, the portion in which the catalyst metal crucible 5 remains is electrically formed. The portion of the circuit trench A3 or the through-hole A4 is formed with a key layer A6 of the disorder circuit. Then the electric circuit can be made of the electric ore layer A6. The enamel layer is again electrolessly electrolyzed (filled with electric forging), so that the electrical circuit composed of the electric ore layer Α6 can be formed by filling the entire =J method as shown in Figure 7 (Ε), so that: The height difference of the earth U electrical circuit is eliminated. In addition, this step is equivalent to the electron microscope processing step. From the above steps, the circuit substrate 10 shown in the figure can be formed. For example, the 3-way substrate A1G' is even in the insulating substrate. The line of the electrical circuit formed on the above is narrowed, the adhesion between the insulating substrate and the Wei circuit is high, and the electrical circuit is not easily damaged. The monthly b is enough to mention the adhesion of the above insulating substrate to Wei, which is inferred to be Because of the relationship between the following mechanisms. In the second embodiment, FIG. 8 is a state explanatory diagram of the insulating substrate A1 in the step of forming the trench of the circuit. FIG. 8(4) shows the post-processing The state of the insulating substrate A1 'W' shows the plating process step In the state of the insulating base material A1. 42 201146113 The insulating base material A1 after the step of forming the groove of the circuit is subjected to laser processing or machining as shown in Fig. 8(A) to perform laser processing or machining. Forming the circuit trenches as shown in the figure, the ;3 3 dielectric coating step on the surface of the trench Α3 of the circuit is covered by the catalyst, which is not easy to fall off due to the small bumps of 3 hai. ΐ ΐ _ _ after 'in the political description ..., electrolytic plating, hunting this, as shown in Figure 8 (Β), in the circuit ^ A3 into the electrical circuit layer Α 7. Because it can prevent the electric The catalyst metal covered by the bell i is detached, so that the circuit, the 凹凸 52 凹凸 _ 定 定 , , , „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ The adhesion. The insulating substrate contains a filler, so the coefficient of thermal expansion is small. Therefore, if the degree is changed and deformed, the formed electric circuit is subjected to the detachment of the circuit. °疋 This deformation causes the electric (4) road to be subjected to the thorn stress, which causes the electrical substrate to be lifted or mechanically added to form the Wei groove, due to the phenomenon of insulation. Since the heat resistance of the base material is high, it is less likely to cause deformation due to heat, and the shape of the groove of the reservoir is deformed. Therefore, it is possible to prevent the electrical circuit from being peeled off. The person of the road can make a circuit board that even hides the electrical damage of Qingcheng. That is, the electrical circuit made of the electric ore layer A is not easily peeled off from the insulating substrate. When it was found that '# uses an insulating substrate a21 which does not contain a filler, the same method is used to form an electric circuit, and a portion where an electric ore layer which is an electric circuit is not formed on the circuit gully is generated, or a shape 43 is formed. The phenomenon of peeling off the electric ore layer. The reasoning is because of the embarrassing reason. In addition, Fig. 9 is a state in which the insulating substrate A21, which is not filled with a filler, is used as the insulating substrate Α2ι. ® 9 (A) and ® 9 (B) are the drawings of A (10) and Figure 8 (b). First, laser processing or machining makes the circuit trench A23 formed on the insulating substrate A21. The surface is smooth, and the surface of the circuit groove A23 is sloped, and the surface of the circuit A23 is not fully covered and may fall off. After that, the electroless plating is performed after the tree A22 is peeled off, such as =, On the surface of the circuit trench A23, there is an electric power which is not coated on the catalyst groove A23, and the electric wire is not formed. Further, since the insulating base material A21 does not contain a filler, the coefficient of thermal linear expansion becomes large. The insulating substrate A21 is easily deformed by temperature change, and the stress applied by the plating layer A25 exceeds the adhesion between the electrodeposited layer A25 and the insulating substrate a/, thereby forming the peeled portion A25a of the plating layer A25. In the case of the circuit trench A23, since the germanium substrate A21 does not have a filler, the insulating substrate A21 (four) is melted by heat, and the shape of the circuit trench A23 is changed: = The stress applied to the plating layer A25 may become ^, due to the deformed shape, When the stress applied to A25 exceeds the portion of the plating layer A2S and the insulating substrate A2, the peeled portion A25a of the plating layer A25 is formed. The spoon is at σ-two, and the electric ore layer 25 of the gas circuit is not formed in the insulating layer. The material 21 is peeled off on the circuit trench 23, that is, when the plating is filled, the obtained electric circuit is easily removed from the insulating substrate. Hereinafter, each structure of the present embodiment will be described. The base material A1 contains a filler. Specifically, for example, the resin and the filler are not particularly limited as long as they constitute a resin which can be used to manufacture a circuit board. Specifically, for example, Wei 201146113 Acrylic resin, polycarbonate _, poly fluorene epoxy resin, double-presence f-type epoxy resin, double-hop s: Yuan gas yr, benzene __ epoxy resin, silk benzene ride. J=r

該環氧樹脂,只要是構成可用也制i中,本硫秘树月日專 的環氧電路級的有機基板 崎可’其他並無特職定。具體而言,例如:雙紛A 聯苯二酚 的Γ氧化物:三聚異氰酸三縮 經過溴化或碟變性的上述環氧樹料阻燃性,亦可使用 使其4硬:===基材時’ -般而言’為了硬化,會 其他並無特別限^。要是y以使用的硬化劑即可’ 酚盤型秦祕系硬化劑等。該苯齡系硬化劑,例如: 丨巾_等硬化劑。另外,關於該硬化劑,可單獨 使用^逑各硬化劑,亦可組合使用2種以上。 平 微粒子’亦可為有機微粒子’並無特別限定。 氧化Hi機 的材料’具體而言’例如:氧餘、 鋇邮〇】、氧ί 等的磁性i充材斜ϋ2⑷1電常數填充材料;硬鐵氧磁體 氧化銻(Sb cn ^ :風氣化鎮(Mg(〇H)2)、氫氧化鋁(Α1(0Η)2)、三 酸辟黧/上氣化錄(Sb2〇5)、胍鹽、删酸鋅、銷化合物、硬脂 ~f'〇)(〇H)2) ' ~〇4)' 機微粒子,亦顧粒子,可單獨使用上述無 性、相對介種以上。該等無機微粒子,由於熱傳導 在讓所期望的功分布、色觸,度雜高,故 計,便可峨^嫌餘及粒徑設 用矽ί:合:ϊ::::理為:該絶緣基材中的分散性,可 丁表面處理。另外,該絶緣基材,為了提高該無機 45 201146113The epoxy resin is an organic circuit of an epoxy circuit grade of the sulphur secret tree as long as it is available. Specifically, for example, the bismuth oxide of Abisbiphenol: the flame retardancy of the above-mentioned epoxy tree material which is brominated or dish denatured by trimeric isocyanic acid tricondensation, can also be used to make it hard 4: == When the substrate is used - Generally speaking, there is no special limit for the hardening. If y is to use a hardener, it can be used as a phenol disc type Qin secret hardener. The benzene age hardener is, for example, a hardener such as a wipe. Further, the curing agent may be used alone or in combination of two or more. The flat microparticles 'may also be organic microparticles' are not particularly limited. The material of the oxidation Hi machine is 'specifically' such as: oxygen residue, 钡 〇 、, oxygen 等, etc. magnetic i filling material ϋ 2 (4) 1 electric constant filling material; hard ferrite magnet yttrium oxide (Sb cn ^ : feng gasification town ( Mg(〇H)2), aluminum hydroxide (Α1(0Η)2), triacid sputum/upper gasification record (Sb2〇5), strontium salt, zinc sulphate, pin compound, stearic acid ~f'〇 )(〇H)2) '~〇4)' Machine microparticles, as well as particles, can be used alone or above. These inorganic fine particles, because of the heat transfer in the desired work distribution, color touch, and high degree of miscellaneous, can be used to calculate the irritability and particle size. 矽ί:合:ϊ::::理为: The dispersibility in the insulating substrate can be surface treated. In addition, the insulating substrate, in order to improve the inorganic 45 201146113

Sit該ίϊϊ材中的分散性,亦可含有魏偶合劑。關於該石夕 f偶1 ’具體而έ,例如:環氧矽烷系、巯基矽烷系、胺基矽烷 i醛、苯乙烯基魏系、甲基丙烯_基魏系、丙 合 材: 二===等」: 另外,關於該有機微粒子,具體而言,例如 容易關,在上述各填料中’由於無機微粒子高>填充化比浐 ======的選擇 宜 述範圍内,電氣電路會接近例如由c 含有量在上 係^,而能夠實現低勉曲以及低應力。另線膨脹 剝離的傾向。吾人認為這是因為不易在=二d二止電錢層 脂覆=::能會發生絶緣步驟_樹 的深度D以及互相隣接之電路、^ 帝a的見度w、該電路溝样 的當令的最小値,宜=2=槽的部分的ίί - 尺且局U.5〜40%。另外,在此 46 201146113 1平均粒子徑’可使用-般的粒徑計,例 表:^===該電另:溝 防止電纟絲成電麟的部分,或會有無法充分 由上物似時不賴 度)在10^3=料,I均粒子徑’當該電路溝槽的宽度(凹溝寬 2〇_以下時,宜〜3^ ’當溝槽寬度超過1_而在 以下時,宜為〇仍7〜μΐη,备溝槽寬度超過20μιη而在30啤 10^ 為〇.05〜7_,當溝槽寬度超過3〇μιη時,宜為〇.05〜 辭H該互相_之電路溝槽與電路溝槽之間的部分的寬度 及該魏賴的深度(溝槪度),滿足與該溝槽 値,冗了槽深度當中的最小 额。另—方面,觸繼以二二 見度均為20μπι ’但該溝槽深度為1〇μιη時,平均粒子 〜3μηι的填料。 *υ;> ^外’該絶緣基材的態樣並無特別限定。具體而言,例如:片 f、、薄膜、預浸材以及三維形狀的成型體等。該絶緣基材Α1的严 又並無特別限定。具體而言,當為片材、薄膜、預浸材時,宜= 如10〜200, ’更宜為20〜1〇〇哗左右。 ’’、、 、,°亥树月曰覆膜Α2只要能夠在該覆膜剝離步驟被剝離即可,其他 亚無特別限定。具體而言,例如:由可用有機;容劑或驗性溶液^易 47 201146113 或可用後述既定液體(膨潤_彡__性_旨 Ξίίΐ樹f覆膜等。其中’從是否能夠輕易而確實地除去這個觀 例使雌雖翻旨賊。關於該膨谢_旨覆膜, 在膜A2的軸方法並無制限定。具體而言,例如: 法,1ίί 面上塗佈綠材料之後使魏燥的方 可幵彡成嫩^费、土材i的主要表面上貼合預先形成之樹脂薄膜等 並ί特別二膜的方法等。另外,塗佈液狀材料的方法 州S ’例如:f知喊轉塗佈法細塗佈法等。 -方ίίΐΓ 的厚度宜在10,以下,更宜在5叫以下。另 膜Α2的厚度宜在α㈣以上,更宜在_以上 械太厚時’在該電路溝槽形成步驟中利用雷 降低的傾:t卜,孔料㈣精度會有 膜難以形成均勻厚度的厚度太薄時’會有樹脂覆 Ϊ 之膨雛細旨覆膜_靡_旨覆膜A2。 脂覆“二再者:二曰二?:g:使用對膨潤液的膨潤度在50%以上的樹 膜,更宜使用在用對膨潤液的膨潤度在1〇〇%以上的樹脂覆 在該覆膜娜步,#靖猶太低時, ;;題當=潤度太 問題,會有使剝離變困難的傾向。 守又獅代生破知專 如,特別限定。具體而言,例 之後,將待^燥方ΐ’或疋在支持基板上塗佈該液狀材料 主要表面上的方法等:成 樹脂覆膜轉印到絶緣基材Α1的 可形成該膨潤性樹脂覆膜的液狀材 或乳狀液等。關於該彈性體的具體例,‘例 48 201146113 水物4的一烯系彈性體,丙烯酸酯系共聚物等的丙烯酸系彈性體, 系彈性體等。若利用該等彈性體,便可藉由調整分散成懸 子液或礼狀液的彈性體樹脂粒子的交聯度或膠化度等特性而輕易 形成具備所期望之膨潤度的膨潤性樹脂覆臈。 另外,該膨潤性樹脂覆膜特別宜為膨潤度相依於膨潤液的ρΗ ,變化的舰。若制該特膜,藉由使賴馳覆步驟中的液 =件與該_除去步驟中的液性條件不同,便可在觸媒彼覆步驟 中的pH值之下使膨雜樹脂覆膜對絶緣基材維持很高的密合力, ^在覆膜除去步驟中的pH值之下使膨潤性樹脂覆膜輕易地被剝 離0 更具體而言’例如,當該觸媒披覆步驟具備例如在阳值Η 雜酸性觸媒金屬膠狀溶液中進行處理的步驟,且該覆膜剝 ΡΗ值12〜14的範圍内的驗性溶液中使膨潤性樹脂 ϋ:二r驟時,該膨潤性樹脂覆膜宜為相對於該酸性觸媒金屬 : Γ在25%以下,更宜在祕以下,且相對於該驗性 /卜ΐ度在 上,更宜在綱%以上,最好是在500%以 上的树月曰覆膜。 體所ΐΐίΐϊ雛樹脂覆膜’例如:由具有既定量的絲的彈性 於印概線板的形賴案_乾膜光阻(以下 '' θ '' R)中的光硬化性的鹼性顯影型的光阻經過全面硬化之後 所侍到的片材,或是熱硬化性或鹼性顯影型片材等。 單位縣轉性體的具_,例如··包含具有絲的單體 等的使ΐ子中具有縣的苯乙烯—丁二稀系共聚物 體烯酸齡共聚物等的丙烯酸系彈性體;以及 乳°=_轉性體’藉由調整被分散成懸浮液或 之驗量、交聯度或膠化度等便可形成具備所期望 液:祐t王度的膨调性樹脂覆膜。彈性體中的絲會因為驗性水溶 =====使脂;膜從絶緣基材表 H . 卜酉夂田里係才日母1畲1的叛基的聚合物重量。 八有絲的單體單位的具體例,例如:(甲基)丙烯酸、富馬酸、 49 201146113 桂皮酸、巴豆酸、伊康酸以及馬來酸酐等。 ^於轉具錢基的雜射的絲的 為議〜2_,更宜為1〇〇〜麵。#酸當量太丄溶 ,成物的相溶性會降低,導致對電麟處理液的耐性會 ^另外,纽當量太大時,對雜水溶朗娜性會有降低的傾 另外,彈性體的分子量宜為i萬〜1〇〇萬’更宜 ί彈iff分子量太大時_性會有降低的傾向,太小時點度^降 ί性細厚朗·_,謂電财處理液的 二’可使用3有光聚合引發劑的光硬化性樹脂組 如日本特_卜231號公報、日本^ = 51唬么報、日本特開平11—212262號公報所揭示的光聚八 與乾膜使其全面硬化所制的片材,或市f的驗性i 办孓的FR,例如,旭化成股份有限公司製的系列等。 另外、’關於其他的膨濁性樹脂覆膜,例如:含有羧基且以松香 :主要成分的樹脂(例如,吉川化工股份有限公司 二AZDAR229」)或以苯酚為纟要成分的樹脂(例二 LEKTRACHEM 公司製 r i〇4F」)等。 膨潤性樹脂覆膜,用f知的旋轉塗佈法或棍塗佈法等的塗 ,將樹脂的懸广液或乳狀液塗佈在絶緣基材表面上之後使其乾 ^或用真空疊合機等將形成於支持基板上的脈貼合於絶緣基 材表面上之>後使全面硬化,便可輕易形成。 —另外’該1路溝槽形成步驟所形成之電路溝槽的寬度並無特別 f ^ ° ^體而言’例如:該電路溝槽宜至少含有線寬5〜30μιη的 (刀||由路溝槽As限定出以無電解電锻形成電鑛層的部 二亦Ϊ電亂電路形成部分。具體而言,例如:在此幵》成之電路 溝槽的見度成為本實施態樣所形成之電氣電路的線寬。亦即,當形 50 201146113 成該等線寬狹窄之電氣電路時,便 電路的電路基板。另外,告报占兮楚二j二=兄刀、、,工過回雄度化之 而言’電氣電路與絶緣“的;==、之: ===;電路?易從絶緣基材二由 基材的从路時,也能夠制電氣電路與絶緣 J材的山口 _问,摘防止電氣電路從絶緣基材的剝離的電路基 緣臬深度,係在彻填滿電_平電氣電路與絶 ΐί ί;,設置為本魏紐卿魏電路的 也ΐ輕易形二w射加工’即使線寬在2ί)μη1以下的細舉電路, 成雷係树魏處理步财湘無讀在欲形 電翻觸即可,其他並無特舰定。另外, ί彼媒㈣麟,並在納旨獅娜之舰媒生 。媒的具體例,例如:金壯(Pd)、白金(pt) 專,或疋使该等金屬生成的前驅物。 幻 關於披覆電鍍觸媒A5的方法’例如:用在pH值卜3的酸性 ii·、件下可進行處理的^性Pd—Sn膠狀溶液進行歧之後,再 溶液進行處理的方法。具體而言,例如以下的方法。 - 首先^將形成電路溝槽A3以及貫通孔A4的絶緣基材A1的表 面亡所附著的油料祕面潍躺驗衛贿、淋節中 =的時間费洗。接著,因應需要’用過硫酸鈉—硫酸系的軟 祕刻處理。然後,在pH值卜2的硫酸水溶液或鹽酸水 洛,專的酸性溶液中再進行酸洗。接著,浸潰於濃度。1%左右的 以氟化亞錫水溶液等為主要成分的預浸液中進行使氯化物離子吸 附在絶緣基材A1之表面上賴浸處理。之後,再浸潰於含有氣化 ^錫與氣化鈀且pH值1〜3的酸性Pd—Sn膠狀物等的酸性觸媒金 屬f狀溶液以凝集並吸附Pd以及Sn。然後,在所吸附的氣化亞錫 與氯化I巴之間產生氧化還原反應(SnC12+PdC^SnC^ + pd丄)( 51 201146113 此,析出電鍍觸媒亦即金屬鈀。 另外’關於酸性觸媒金屬 %膠狀觸媒溶液等,亦 > 田二夜’可使用習知的酸性Pd— 電鍍程序。關於該等程使用觸媒金屬膠狀溶液的市售 限公司所系統化販售者1如· RohmandHaas電子材料股份有 關於5亥樹脂覆膜A2的!v 的絶緣基材A1浸潰在鹼,y Lf如.將披覆著樹脂覆臈A2 覆膜A2被溶解體中經過既定時間,使樹脂 使_如1〜·左右的濃^ 容液,可 剝離時,輕輕用力將其剝除去率。另外,亦可在使其因為膨潤而 行^外’就使卿潤性樹脂覆膜作為該樹脂編2的情況進 不會液)’只要使用 容解而只會讓該膨^^ ,度的液斷可,其他並無制限定。該獅離 腊 树脂覆膜A2的種類或厚度選擇較適當者 ===細胸如〜曝機_水溶^ 另外’當在觸媒披覆步驟中使用以上述酸性條件 時,月_生樹脂覆膜A2 s由在酸性條件下膨潤度 了:在驗性條件下膨潤躲观以上的例如二_彈性體、 糸彈性體以及聚醋系彈性體等的彈性體所形成。該等膨潤性_ 素,利用PH值12〜14的驗性水溶液,例如濃度卜·左$ ( ,化鈉水溶液等,便可輕易被膨潤、剝離。另外,為了提高剝離性 $可在浸潰咖超音波照射。另外,亦可因顧要輕_力將其剝 I示° 關於使膨潤性樹脂覆膜A2膨潤的方法,例如:將披覆著膨潤 52 201146113 Ξ 泛Μ絶緣基材A1浸潰在膨潤液中經過既定時間的方 说。另為了提咼剝離性,最好是在浸潰時用超音波昭射 僅文到膨潤而未剝離時,亦可根據需要輕輕用力將其另, 禅處理的方法,可使用例如:將部分披覆有電錢觸 某5的色緣基材A1浸潰於無電解電鑛液中,在披覆有電 A5的部为上析出無電解電鍍膜(電錢層)的方法等。 ’又某 嫩ιϋ於么電解,1 金屬’例如:銅(Cu)、錄㈣、銘(C〇)、 ^ CU為域分的電鍍由於導雜優異,是較佳 較=選ί。卜胃含有Nl時,耐紐或與㈣的密合性優異,是 無電=電鍍膜A5的臈厚並無_限定。具體而 〜ΙΟμηι,更宜為丨〜5哗左右。尤其 』 = Ϊ果Ϊ可厚1厚’便可㈣形成剖面積較大的“配線= 時,便可使金屬配線的強度提高,是較佳的作法。 的部材/1表面殘留働觸媒Α5 上正確f膜在欲形成電路溝槽的部分 邦八μ 導電^ 方面’亦可防止在不欲形成電路溝槽的 二電解電鍛膜。因此’即使在狹窄的節距間隔形成複數 t微電路’也不會在_電路之間殘留多餘的電鍍 膜因此,此夠防止知路或遷移等問題的發生。 [第2—2實施態樣] 氣雷ϋ,—1實,樣中’係說明在平面的絶緣基材上形成電 二之電路Ϊ板,惟本發明並非僅限於此。具體而言,即 npj使用具有面低差狀之立體_三轉狀的絶緣基材,也 此° 1仔/、備正確配線之電氣電路的電路基板(立體電路基板)。 ,以下,,説明第2-2實施態樣之立體電路基板的製造方法。 驟的說明製造第2~2實施態樣之立體電路基板的各步 =圖10⑷所示的’在具有高低差部分的立體絶緣基材 崩的表面上形成樹脂覆膜A2。另外,該步驟相當於覆膜形成步 53 201146113 該立體絶緣基材A51可使用習知用來製造立 種樹脂成形體,並無特別限定。該等成形體利用射出成形^尸,· 生產效率較佳。關於用來製得樹脂成形體的樹脂材料的呈體^ 如:聚碳酸酯樹脂、聚醯胺樹脂、各種聚酯樹脂 ς 聚苯硫晴脂等。 曰' 該樹脂覆膜A2的形成方法並無特別限定。具體 與該第^實施態樣同樣的形成方法等。 ’ 5 ’例如· J著’如圖10⑼所示的’在形成有該樹脂覆膜A2的絶緣基 以料且财膜A2的外表面嫩行雷射加卫或機械加工 以械具備所之形狀錢深度的t路賴A3。 A3的雷射加工或機械加工,係以該樹脂覆膜A2二 當過該賴膜A2的厚度。另外,該步驟相 藉J該電路溝槽A3限定出以無電解電鑛形成電鑛層的部分, 亦即,電氣電路形成部分。 接著’如圖10(C)所示的,在該電路溝槽A3的表面上以及 電路i冓,的該樹脂覆膜A2的表面上披覆觸媒金屬(電^ ⑽^卜’巧驟相切觸媒彼覆步驟。藉由該等觸媒披覆 ^1G(C)所示的,便可在電路溝槽Α3的表面上以及樹脂 覆膜Α2的表面上彼覆觸媒金屬Α5。 膜1G(D)所示的,魏立觀絲材A51將該樹脂覆 揭A3 W L猎此’便可在該立體絶緣基材A51的形成有該電路溝 |膜的表面上,觸媒金屬A5。另一方面,披覆在該樹脂 、表面上的觸媒金屬A5,在载置於該樹脂覆膜A2之上的 與該樹職膜A2 —併被除去。另外,該步驟相當於覆膜 緣1G(E)所示的’對已制離該樹脂覆膜A2的立體絶 貫施無電解電錢。藉此,在殘存賴媒金屬A5的部分 上开/成讀層A6。亦即,麵成有該魏雜A3或該貫通孔八4 54 201146113 的部分上’形成作為電氣電路的電鍍層A6。另外,該步驟相♦於 • 電鍍處理步驟。 田、 - 根據上述各步驟’如圖1〇(Ε)所示的,便可形成電路基板A6〇, 其在三維形狀的立體絶緣基材A51上形成電氣電路A6。如是形成 之電路基板A60,即使絶緣基材上所形成之電氣電路的線寬以及線 間隔很狹小,絶緣基材與電氣電路的密合性也很高,電氣電路不易 損傷。另外,本實施態樣之電路基板,即使在立體電路基板的具有 高低差部的表面上’也能夠正確且簡易地形成電路。 〔第3實施態樣〕 本發明更關於一種屬於多層電路基板的技術領域且使用加成 法的多層電路基板的製造方法以及該製造方法所製造的多層電路 基板。 θ 近年,以行動電話為首之攜帶式資訊終端裝置、電腦及1周邊 裝置、各種資訊家電裝置等的電氣裝置,朝高度功能化快速發展。 伴隨於此,對於該等電氣裝置上所搭載的電路基板而言,其電氣電 路也被要求更高密度化。為了實現該等電路基板的高密度化,吾人 希求一種能夠正確地形成具備更狹窄之線寬以及線間隔的電ς的 ,法。在高密度化的配線中,容易發生配線間的短路或遷移等問 題。另外,在較細寬度的配線中,配線的機械強度會降低,電 易因為受到衝料因素而被切斷。再者,堆疊數增加=電=^ 面上所產生的凹凸就會變大,欲形成細微電路就會變困難。 ^往’電路基板的電路的形成方法,已知有減去法或加成法。 ft法,是將欲在金屬躲疊板的表社形成電路的部分以外的金 去(減去),⑽成電路的方法。另—方面,加成法,是對絶 基2„電_部分實施無電解電鍍,⑽絲路的方法。 都八*Γ般而言’減去法是侧膜厚較厚的金屬糾在欲形成電路的 金^的方法。若利用這個方法’則被除去部分的金屬 ' i叙一*面,加成法可僅在欲軸金屬配線的部分上形 ‘電^开^電鑛膜’故不會浪費金屬。從此點來看,加成法是較佳的 55 201146113 J知的代表性域法之-的全加成法,以如τ方式 先,在絶緣基材的表面上披覆電錢觸媒。接著,在電錢 J; 成光阻層。接著,透過形成有既定電關案的光罩對雜 = 光。接著’對電路随進行顯影。織’對顯影所忒 ,圖J的表,實施無電解電錢’以在電路圖案的部分上形成 線。藉由該等步驟便可在絶緣基材上形成電氣電路。 > - ^甘在上述的習知加成法中’會在絶緣基材的整個表面上披覆雷供 時’便可在光阻未保__分形成電鍍膜。細,當未ί 進^景辦,可能會在本來不欲形成電路的部分殘^ ^絲電。這是因為在絶緣基材的整個表面上披覆電鍍觸媒所 路或遷糊題,在形成線寬以及制驗狹?的電n 為了解決該等問題,吾人考慮應用例如日本特開昭58—186994 麟。錢,在絶、絲材上麵翻旨保護膜。 電路圖案的溝槽以及穿通孔。接著,在該絶緣基i ==:,匕層。接著’將該樹脂保護膜剝離,僅在溝S ^及穿通孔的内壁面上殘留活性化層。然後,對該絶緣 $電=選擇性地在該受到活性化之溝槽以及穿通孔的内i面ΐίϊ 掉择技術’本案申請人已對使無電解電鍍用的電鍵觸媒以高 f殘留在例如電路圖案的部分或穿通孔的内壁面等欲進J怎 以及ΪΪΪ 的發明内容提出專利申請(曰本特願2008-118818 該====獅_1嶋等)。兹參照圖17説明 b。接f ,在絶緣基材&的表面上塗佈樹脂皮膜 开」的,在已塗佈樹脂皮膜b的絶緣基材a上^ 形成具備所期望之電路圖案的溝槽“戈穿通孔d 56 201146113 ΠΒ中溝槽e的底面與絶緣基材a的表面—致,然而將溝槽c挖掘 巧比絶緣基材a的表面更深的位置也沒有關係。接著,如圖17(:所 不的,在溝槽c以及穿通孔d的表面上以及樹脂皮膜b的表面上坡 覆電鑛觸媒e。在此,紐觸媒在概紅包含其前驅物。接著,如 圖17D所不的,將樹脂皮膜b剝離,以在溝槽c以及穿通孔d的 面上殘留電鍍觸媒e。然後’如圖17E所示的,在電鍍觸媒e殘留 部分上形成無電解電鑛膜f,以製得在溝槽c以及穿通孔d的 面上形成精度良好之導電層的電路基板χ。 另外’近年來’關於高密度化之多層電路基板的製造方法,逐 :=各層電氣電路’-邊形成作為層間連·孔的介層孔 層法’已為人所習知,而,該等增層法,若應用圖 羯如雇糊題。兹 首先,,圖18A所示的,準備已形成第i電氣電路h的電路 i ί亦^是餘在電路基板g的表面 法亦不,所路基板§的表面。另外,第1電路h的形成方 路其接者,如^ 18B所示的,在已形成第1電路h的電 ,基,g的表面上形成絶緣層i。接著,如圖⑽所示的,在絶 二出D夕匕卜表面)上形成樹脂皮膜]。接著,如圖18D所示的,自 j之二二卜3二=°工,以形成具備樹脂皮膜 a ㈣圖案k以及層間連接用孔m。電路圖荦 到H制連接用孔m: 至】達電路基板g的第i電路h,使該第丨電路 表面接示的,在樹脂皮臈j的表面、電路圖案㈣ 披覆電ί1Ϊ ίΓ的表面以及所露出之第1電路h的表面上 戶S可達到簡化作業之目的。接著,如圖晰 ίϊΐ i 樹脂皮膜j。然後,如圖18G所示的,對 、、緣㈢貫知無電解電鍍,在殘留電鑛觸媒n的電路圖案k的部^ 57 201146113 上形成無電解電鍍膜以在絶緣層i上形成第2電氣電路p。另外, 使無電解電鍍膜從位於層間連接用孔„1之底部的第丨電路h開始 成長’藉此用電鑛金屬填充層間連接用孔m以形成金屬 的第2電路P與電路基板g的第!電路h透^屬q柱卞在 層間連接。 π 然而,若像這樣在電路圖案k的部分與層間連接用孔m的部 刀同時以無電解電細^成導體,戦路部分的配翻麟的線寬很 冰度錢’另外墊賴孔深度也很淺,故軸導體形成的時 電路部分更深,因此電齡屬填充需要較長時間:= =分的導體形成終了時點無電解電鍍終了的話,如目l8G所示的, =連,用孔的金屬填充會稍充分,而成為·與制連接用孔 ί it,因。相反地,若持續進行無電解電鍍朗層間連接用 充:則電路部分會形成太縛體而變成容易發生短 二另外’有文獻提出縮小層間連接用孔的容積,以在短時 用孔的金屬填充,因此,使層間連接用孔的深度 使層間連接用孔的徑長縮小。然而,就前者而言,在電路 基板的設計上有好雜’實細實現。另外,就後者*言, 連接用孔與電路的接觸面積會變小,層間連接的可靠度會降低: 連接用孔的徑長縮小到與電路圖案的配線用溝槽的寬度 ^或在^下、,雖然能夠在短時_完成金屬填充,但是此時, 間連接用孔的内壁面以及底部成長出來,而且也會從 電路圖案侧成長出來’容易在金屬柱的内部產生孔隙。 、〇 ΐΐϋΐ目ΐ*於提供一種多層電路基板的製造方法,其可解 =在利H錄造錢電路基板時翻加成法的情況下 問· ’即使細微電路圖案與層間連接用孔混合存在,也能U =連接用孔内充分而良好地填充金屬,並防止電路部分形成多^ 本發明的多層基板的製造方法 接之電氣電軸賴雜机的乡層板㈣造連 58 201146113 的‘1電路#電路基板的電路形成面上形成第1絶緣層 第1雷:步驟;從外表面在該第1絶緣層上形成開孔,使 i令ίίίί開孔形成步驟;在露出之第1電氣電路上用電 以形成金屬柱的金屬柱形成步驟;在該第1絶緣 及該金屬柱的頂部形成第2絶緣層的第2絶緣層形成 2絶簡料表面上形成細旨細的越形成步驟; 心廢二^ *的外t面上形成具有至少該樹脂皮膜的厚度與該第2 ’乂 合計値以上的既定深度以及既定轉狀的溝槽及 =成電路圖案的電路_形成步驟;在該樹脂皮膜的表 h ϋΐί路圖案的表面上披覆電锻觸媒的觸媒披覆步驟;從該 、、’、,a *去該樹脂皮膜的皮膜除去步驟;以及對該第丨絶緣層 =該紅绝緣層實施無電解電鑛,在殘留電賴媒的電關案的 :二二及齡屬柱的露^部分形賴麵以在該第1絶緣層以及 =2絶緣層上形成第2電氣電路,同時使該 =該電路基板㈣丨魏電路透職金屬柱在制連接的= 步驟。 若利用上述方法,由於以電路_職前的第丨絶緣層形成步 驟、開孔形成步驟以及金屬柱形成步驟預先用魏金屬填充層間連 接用孔’故無齡意電路部分是否形成多制導體,而能夠花時間 充分地在層間連接用㈣填充金屬。另外,由於電路隨尚未形 成’故電鍍膜不會從電路圖案側成長出來,可防止孔隙產生,使金 屬填充情況良好。紐,由於在層間連細孔的金屬填充完成之 後’利用第2絶緣層形成步驟、皮膜形成步驟、電路圖案形成步驟、 觸媒彼覆步驟、皮膜除去步驟以及電錢步驟,以圖17A〜圖17E所 説明的加成法形成電路部分的導體,故能夠在短時間内形成精度良 ,的細微導體,並防止在電路部分形成多餘的導體。根據以上内 容,即使細微電路圖案與層間連接用孔混合存在,也能夠適當應用 加成法,以增層法順利製造出多層電路基板。 〜 金屬柱形成步驟所形成的「金屬柱」,只要厚度比構成電氣電 路的導體層更厚,有在電氣電路上朝約略垂直方向突出設置的導電 59 201146113 性凸部即可,其形狀並無特別限定。例如,除了圓柱或角柱等剖面 形狀固定的柱狀之外,也包含剖面形狀在長度方向上變化^ 狀或角錐台狀。 口 在電路圖案形成步驟形成的電路圖案的「溝槽」,主要是配 用溝槽,「開孔」係例如電極墊部用的開孔。惟因應狀況 為 層間連接用孔(有別於先前金屬填充完成的層間連接用孔)。’ 另外,若利用上述構造,由於在第丨絶緣層的外表 層/在第2絶緣層的外表面上形成樹脂皮膜,然 ^備至少納旨旗的厚度與第2絶緣·厚度的合計値= 除去樹脂皮膜’故在電路圖案的部分中第2絶 會㈣加工除絲作。因此,電路贿的底面會位於挖掘 f比第2絶緣層的外表面更下面的位置’而形成構成電氣電路的導 埋餅第2絶緣層的外表面的·'部分或全部的狀能。έ士果, 加導體層的厚度’並確保電 'ϋ 少ί體層從第2絶緣層突出的份量,保防^= 、、、色緣,月兄洛’消除或減少在電路形成面上所產生之凹凸。 底面露飾成步㈣金胁的頂部從冑路圖案的 :夠頂二墊 導體層從絶緣層的外表丄= 面的位置,it屬二電鍍金屬填充到電路圖案的底 時,使金屬喻面-致 圖案的底面挖掘到比第1絶緣層的外表面g面另:=- 201146113 ΐ柱緣相絲面,而是使成長停止在其之前的高 驟的階段金齡的頂部不會從電路圖案的底面突寺t 路圖金屬产形成步驟之後,將金屬柱的頂部除去到電 此,在電路圖案形成步驟中,金屬柱的頂部 或大出疋’便可確實達成修正金屬柱的頂部的位置使 金屬柱的頂部不會從電路圖案的底面突出之目的。 出之开ίί步驟中,利用無電解電錢使電鑛膜從露 =亦即電减路當作無電解魏的電雜,故能夠合理地形成金^ 另外,本發明亦可在金屬柱形成步驟中,於第η 面、開孔的_面以及露出之第〗電氣電路的表面上披覆^ 分實ΐ無電解電鍍之後,藉由實施電:電 1 ΐί 除去在包含第1絶緣層表面的第 ,、、色緣層外表面側析出的電鍍金屬。在包含 :溶======== 絶緣層上會在該部分上==二ί 綱地從絶緣層表面將樹脂皮膜除去的話’便能夠防止這 電路ΐί,=明的多層電路基板,係以上製造方法所製造的多居 電路基板。因此,即使細微電路圖案與相連接沒 夕二 ^利地在層間連接用孔内充分填充金屬,進而製得 引起短路等問題的多層電路基板。 、勺導體不易 61 201146113 =艮p,本發明的第3實施態樣包含以下技術内容。 5月求項3 — 1. 一種具備相互連接之電氣電路與層間連接用孔 的多層電路基板的製造方法,包含:在形成有第〗電氣電路的電路 基板的,路域面上軸第〗絶緣層的第】絶騎形成步驟;從外 表面在5亥第1絶緣層上形成開孔,使第!電氣電路露出的開孔形成 ίΐίίί出之第1電氣電路上用電鐘金屬填充該開孔以形成金屬 f的if姉紗驟;在該第1絶緣層的外表面以及該金屬柱的頂 上ί緣層的第2絶緣層形成步驟;在該第2絶緣層的外表 膜的皮臈形成步驟;在該樹脂皮膜的外表面形成具有 fd日皮臈的厚度與該第2絶緣層的厚度的合計値以上的ί 槽及/或開孔以形成電路圖案的電路圖 ^除ϋ,以及制第丨練相第 圖案的部分上以及該金屬_: J電路,同時使該絶緣層的第 電路透過該金屬柱在層間連接的電鍍步驟、。電路基板的第1電氣 法,:==驟;板的製造方 底面露出且突出的方式形成電路圖電路圖案的 2電氣電路的部分當作電細塾部:、、i h金屬㈣頂部的第 凊求項3 —3.如請求項3 —1你夕口 法’其中,在電路圖案形成步驟中,:基板的製造方 的底面露出或突㈣方式形成魏_金胁的卿不從電路圖案 法’ 金ί 電路基板的製造方 f在電峨形成步驟===== 請求項3 — 5.如請求項3〜3所記載之多層電路基板的製造方 62 201146113 f,其中,在金雜形成步驟之後,將金屬柱的頂 案底面的位置,藉此,在電路_形成步财 、丨電路圖 會露出或突出。 使I屬柱的頂部不 〇月求項3 —6.如睛求項3 — 1〜3 —5中任1項所句鲁 路基板的製造方法,其中,在金屬柱形成步驟巾,在^ =層電 氣電=以無電解魏使電鍍膜成長,藉此㈣鍍金屬填電 明求項3-7.如請求項3-1〜3-5中任1項所記載幵‘ 路基板的製造方法’其中’在金屬柱形成步驟中,電 念面,孔的内壁面以及露出之第!電氣電路的表面覆 鑛,以嫌屬填娜,之後,將在包含第解$ 絶緣層的外表面側析出之電鍍金屬除去。 、第 請求項3-8.如請求項3 —;i〜3 —7中任丨項所記載之 路土板的製造方法,其中,樹脂細係可被既定液曰而 從絶緣層溶解除去或剝離除去的樹脂皮膜 解次%潤而 七求項3 —9. _請求項3-1〜3 —8中任1項所記載之势造 方法製造的多層電路基板。 若根據本發明,即使細微電路圖案與層間連接用孔混合 也能夠適當應用加成法,利用增層法順利製造出多層電路^板。而 ,,由於電氣電路埋設於絶緣層,故可確保電路的機械性強户 護電路,防止電路魏緣層脱落’並防止在電路形成面上產生^凸。' 〔第3 —1實施態樣〕 圖13是用來表示本實施態樣之多層電路基板π的電氣電路 F27的構造以及層間連接用孔F21(與金屬柱F22)的配置等的部分 俯視圖。如圖所示,在本實施態樣中,可製造出電氣電路F27與層 間連接用孔F21亦即介層孔相互連接的多層電路基板F丨。電路F& 包含線寬細微之配線F27a以及電極用墊部F27b。電極用墊部F27b 與層間連接用孔F21重疊設置。 圖13中的I—I線表示圖14〜圖16的端視圖的切斷位置。在 圖14中,符號F10為電路基板,符號Fli為第i電氣電路,符號 63 201146113 嘌符號F21為層間連接用孔,符號F22為金屬柱, 為第2絶緣層’符號F24為樹脂皮膜,符號F25為電路圖 ,二^唬F26為電鍍觸媒,符號F27為第2電氣電路,符號F3〇 示絶緣層F20與第2絶緣層F23組合的整個絶緣層。如圖 141所示的’在該多層電路基板π中,第丨電氣電路Fn設置 路基板F10上,第2電氣電路F27設置在絶緣層F3〇(第ι絶緣芦 F20以及第2絶緣層F23)上’絶緣層F30堆疊在電路基板π〇上二 第1電氣電路F11與第2電氣電路F27透過設置在第i絶緣層F2〇 上的層間連接用孔F21(以及金屬柱F22)在層間連接。 <電路基板準備步驟> >在本實施態樣的製造方法中,首先,如圖14A所示的,準備 又置有第1電氣電路F11的電路基板fi〇(電路基板準備步驟) 外’雖然在14A中,第1電路F11是載置在電路基板的表 面上,惟亦可埋設於電路基板F1〇的表面。另外,第1電路Fn的 形成方法不在關。可利關如減去法或加成法料知電路形成方 法形成。再者’祕基板可R在單φ形成電路,或是在雙面均形成 電路。另外,也可以是多層電路基板。 電路基板F10可採用以往在多層電路基板製造中所使用的各 ,有機基板,並無特別限定。關於有機基板的具體例,例如:由環 氧樹脂、丙烯酸樹脂、聚碳酸轉脂、聚醯亞胺樹脂、聚苯硫峨 脂、聚苯_脂、氰酸g旨樹脂H惡嗪翻旨、雙絲競胺樹脂 等樹脂所構成的基板。電路基板no的態樣可為片材、薄膜、預浸 材,二維形狀的成形體專,並無特別限定。電路基板的厚度也 無特別限疋,例如,g為片材、薄膜、預浸材時,厚度可設為1〇 〜500μιη ’更宜設在20〜200μιη左右。另外,電路基板F1〇的詳細 説明,準照以下記載之第1絶緣層F20的詳細説明,與其相同。 <絶緣層形成步驟> 接著’如圖14B所示的,在設置有第j電路Fu的電路基板 F10的表面(電路开>成面)上开>成第1絶緣層ρ2〇(第1絶緣層形成步 驟)。該第1絶緣層F20的態樣並無特別限定。具體而言,例如: 64 201146113 片材、薄膜、預浸材以及三維形狀的成形體,或由樹脂溶液 .形成。該第1絶緣層F20的厚度並無特別限定。具體而言,= -薄膜、預浸材時,宜設為例如10〜2〇〇μιη,更宜設在2〇〜100 工f。另外’該第1絶緣層F2〇亦可含有二氧化石夕粒子等的 粒子。例如,可在電路基板F10的表面上堆疊 預 加壓使其擴張貼合,之後使其硬化,便可形成第i 亦 =熱加壓使其硬化成形。另外,亦可在電路基板F1㈣表面上塗 佈機溶液’之後使其硬化,便可形成第i絶緣層F20。另外,亦 2用模具以及框具等工具,置人絶緣層材料,加壓使1硬化成 二,細成形體’亦可對片材、薄膜或預浸 ;J 2 ^所得的材料堆疊在電路基板刚的表面上,在加=^張= 後使其硬化,或是加熱加壓使其硬化,進而形成三維形狀的 種』可採用以往多層電路基板製造中所使用的各 =基丙浠酸樹脂、聚碳 m亞她!! t 1 喊秘脂、聚苯驗樹脂、氰酸酯樹 曰來魏麟脂物旨所構成的基板。 ^製造中咖有機基Sit's dispersibility in the coffin can also contain Wei coupling agents. Regarding the stone f 偶 1 1 'specifically, for example, epoxy decane, decyl decane, amino decane i aldehyde, styryl wei series, methacryl _ kewei series, propylene material: two == In addition, as for the organic fine particles, for example, it is easy to turn off, and in the above-mentioned respective fillers, the selection of the inorganic particles is high, and the filling ratio 浐====== It is close to, for example, the c content is on the top, and low distortion and low stress can be achieved. Another line expands the tendency to peel off. I think this is because it is not easy to be in the =2d2, the electricity is covered by the grease =:: the insulation step _ the depth D of the tree and the circuit adjacent to each other, the visibility of the emperor a, the ditch of the circuit The minimum 値, should = 2 = the part of the slot ίί - ruler and the bureau U.5~40%. In addition, in this 46 201146113 1 average particle diameter ' can be used - general particle size meter, for example: ^ = = = the electric another: the groove prevents the electric wire from becoming part of the electric lining, or there may be insufficient to be used It seems that the time is not good.) In 10^3=Material, I average particle diameter 'When the width of the groove of the circuit (the groove width is 2〇_ or less, it should be ~3^' when the groove width exceeds 1_ while below , it should be 〇 still 7~μΐη, the groove width is more than 20μιη and in 30 beer 10^ is 〇.05~7_, when the groove width exceeds 3〇μιη, it should be 〇.05~ 辞H the mutual _ The width of the portion between the circuit trench and the circuit trench and the depth of the Weilai (gap) satisfy the minimum of the groove depth and the groove depth. On the other hand, the touch is two When the depth of the groove is 20 μm, but the groove depth is 1 μm, the filler of the average particle is less than 3 μm. *υ;> ^External' The aspect of the insulating substrate is not particularly limited. Specifically, for example, : sheet f, a film, a prepreg, a three-dimensional shaped molded body, etc. The insulating substrate Α 1 is not particularly limited. Specifically, it is a sheet or a film. When the prepreg is used, it is preferably = 10 to 200, 'more preferably about 20 to 1 。. '',,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Other sub-areas are not particularly limited. Specifically, for example: from available organic; or an agent or an experimental solution ^ 易 47 201146113 or can be used to describe the following liquid (swelling _ _ _ _ _ _ Ξ ί ΐ f f f 。 。 。 。 。 。 It is not limited to the method of the film A2. After the green material, the method of applying the liquid material can be applied to the main surface of the soil material i, such as a resin film formed in advance, and a special film. S 'for example: f knows shouting coating method fine coating method, etc. - the thickness of square ΐΓ ΐΓ ΐΓ 宜 is preferably 10 or less, more preferably 5 or less. The thickness of the other film Α 2 should be above α (four), more preferably _ When the machine is too thick, 'the tilting of the lightning is used in the step of forming the groove of the circuit: t, the accuracy of the hole material (four) will be When the film is difficult to form a uniform thickness, the thickness of the film is too thin, and the film is covered with a resin coating. _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ A tree membrane having a degree of swelling of 50% or more is preferably used in a coating of a resin having a swelling degree of more than 1% by weight on the swelling liquid, and is used in the film. If there is too much problem, there will be a tendency to make the peeling difficult. The lion and the lion are special, especially limited. In particular, after the example, the liquid is coated on the support substrate. A method or the like on the main surface of the material: a liquid material, an emulsion, or the like which can form the swellable resin film by transferring the resin film to the insulating substrate Α1. Specific examples of the elastomer are as described in Example 48 201146113, an olefinic elastomer of the water 4, an acrylic elastomer such as an acrylate copolymer, or the like. When these elastomers are used, it is possible to easily form a swellable resin covering having a desired degree of swelling by adjusting characteristics such as the degree of crosslinking or the degree of gelation of the elastomer resin particles dispersed in the suspension liquid or the ritual liquid. . Further, the swellable resin film is particularly preferably a ship whose swelling degree depends on the ρΗ of the swelling liquid. If the special film is formed, by making the liquid material in the repulsion step different from the liquid condition in the _ removal step, the swelled resin film can be coated under the pH value in the catalyst overlying step. Maintaining a high adhesion to the insulating substrate, ^the swellable resin film is easily peeled off under the pH value in the film removing step. More specifically, for example, when the catalyst coating step is provided, for example a step of treating in a positive value Η hetero-acid catalyst metal colloidal solution, and swelling the swellable resin in the test solution in the range of 12 to 14 of the film peeling value: the swelling property Preferably, the resin coating is relative to the acidic catalyst metal: Γ is 25% or less, more preferably below the secret, and is relative to the testability/distress, more preferably at least 5%, and most preferably at 500. More than % of the trees are covered with mulch.体 ΐϊ ΐϊ 树脂 树脂 树脂 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' The type of photoresist that has been subjected to full hardening, or a thermosetting or alkaline developing sheet. _, for example, an acrylic elastomer containing a styrene-butadiene-based copolymer olefinic acid copolymer having a filament, such as a monomer having a filament, and the like; The °=_transferable body' can be formed into a swelling resin coating having a desired liquid: a degree of the desired liquid by adjusting the dispersion or the amount of the suspension, the degree of crosslinking, or the degree of gelation. The filaments in the elastomer will be water-soluble due to the test of water solubility =====; the film from the insulating substrate table H. 卜 酉夂 里 才 才 日 日 畲 畲 畲 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的Specific examples of the eight-filament monomer unit are, for example, (meth)acrylic acid, fumaric acid, 49 201146113 cinnamic acid, crotonic acid, itaconic acid, and maleic anhydride. ^ In the transfer of money-based miscellaneous silk for the discussion ~ 2_, more suitable for 1 〇〇 ~ face. #酸当量太丄溶, the compatibility of the product will be reduced, resulting in resistance to the electric lining treatment solution. In addition, when the kinetic equivalent is too large, there will be a decrease in the solubility of the water-soluble Lanna, and the molecular weight of the elastomer It should be i0000~1 million. It is more suitable. When the molecular weight of iff is too large, the _ sex will have a tendency to decrease. If it is too small, the degree will be reduced. _, the second of the electricity processing liquid A photocurable resin group using 3 photopolymerization initiators is disclosed in Japanese Patent Publication No. 231, Japanese Patent Application Publication No. Hei. No. Hei. No. Hei. For the sheet produced by the hardening, or the FR of the city, for example, a series made by Asahi Kasei Co., Ltd., etc. In addition, 'for other swelling resin coatings, for example, a resin containing a carboxyl group and a rosin: a main component (for example, Yoshikawa Chemical Co., Ltd. AZDAR229) or a resin containing a phenol as a main component (Example 2 LEKTRACHEM) Company system ri〇4F") and so on. The swellable resin film is coated on the surface of the insulating substrate by a coating method such as a spin coating method or a stick coating method, and then dried or vacuum laminated. The machine or the like can be formed by bonding the vein formed on the support substrate to the surface of the insulating substrate and then fully curing it. - In addition, the width of the circuit trench formed by the one-channel trench forming step is not particularly f ^ ° ^ body] ' For example, the circuit trench should preferably contain at least a line width of 5 to 30 μm (knife|| The trench As defines a portion of the portion of the trench that is formed by electroless forging to form an electric ore layer. Specifically, for example, the visibility of the trench formed in this embodiment is formed in the present embodiment. The line width of the electrical circuit, that is, when the shape of 50 201146113 into the narrow circuit of the electrical circuit, the circuit board of the circuit. In addition, the report accounted for the two two brothers = brother, knife, work back In terms of masculinity, 'electrical circuit and insulation'; ==, and: ===; circuit? easy to use from the insulating substrate 2 from the substrate of the road, can also make electrical circuit and insulation J material Yamaguchi _Qi, picking up the depth of the circuit base of the circuit that prevents the electrical circuit from being peeled off from the insulating substrate, is completely filled with electricity _ flat electrical circuit and absolutely ; ί ί; W-ray processing 'even if the line width is below 2 ί) μη1 below the fine-grained circuit, into the thunder tree Wei treatment step Cai Xiang no read in desire The electric flip can be used, and there is no special ship. In addition, ί 。 。 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( , or a precursor for the formation of such metals. A method for coating the plating catalyst A5, for example: a Pd-Sn colloidal solution which can be treated under the acidic ii· of pH value 3 After the disambiguation, the solution is further processed, for example, the following method: First, the surface of the insulating substrate A1 on which the circuit trench A3 and the through hole A4 are formed is adhered to In the case of the bribe and the drenching, the time is washed. Then, in response to the need, 'sodium sulphate-sulfuric acid soft secret treatment is used. Then, in the pH value of 2 aqueous sulfuric acid solution or hydrochloric acid, the special acidic solution Then, it is immersed in a concentration of about 1% of a prepreg containing a stannous fluoride aqueous solution or the like as a main component, and the chloride ions are adsorbed on the surface of the insulating base material A1. , and then impregnated with acidic Pd-Sn glue containing gasification tin and vaporized palladium and pH 1~3 An acidic catalyst metal f-like solution such as agglomerates to adsorb and adsorb Pd and Sn. Then, a redox reaction is generated between the adsorbed stannous vapor and the chlorinated I bar (SnC12+PdC^SnC^ + pd丄(51 201146113 Thus, the plating catalyst is metal palladium. In addition, 'the acid catalyst metal% gel-like catalyst solution, etc., also> Tian Erye' can use the conventional acidic Pd-plating procedure. Systematic sales of the company using the catalyst metal colloidal solution 1 such as RohmandHaas Electronic Materials Co., Ltd. There is an insulating substrate A1 of 5 hai resin film A2!v immersed in alkali, y Lf For example, the resin coating A2 coating A2 is applied to the dissolved body for a predetermined period of time, so that the resin can be detached at a concentration of about 1 to about 5%. In addition, it is also possible to make the swellable resin coating film as the resin woven fabric 2 because it swells and swells. The liquid can be broken, and the other is not limited. The type or thickness of the lion-free resin coating A2 is selected as appropriate ===thin-thorax such as ~exposure machine_water-soluble^ In addition, when using the above acidic conditions in the catalyst coating step, the resin is covered. The film A2 s is formed by an elastomer which is swollen under acidic conditions, such as a di-elastomer, an anthraquinone elastomer, and a polyester elastomer, which are swollen under the test conditions. These swellable substances can be easily swelled and peeled off by using an aqueous test solution having a pH of 12 to 14, for example, a concentration of Bu·Left $ (, a sodium solution, etc.) In addition, it is also possible to peel off the swellable resin film A2 by a light _ force. For example, a method of swelling the swellable resin film A2, for example, is immersed in a swellable 52 201146113 Μ ubiquinone insulating substrate A1 In order to improve the peeling property, it is better to use the ultrasonic wave during the impregnation to swell and not peel off, or gently press it as needed. For the method of zen treatment, for example, a color edge substrate A1 partially covered with electric money may be immersed in an electroless alkaline liquid, and an electroless electricity is deposited on a portion covered with electricity A5. The method of coating (electric money layer), etc. 'Another kind of electrolysis, 1 metal' such as: copper (Cu), recorded (four), Ming (C〇), ^ CU is the domain of the plating due to excellent impurity, It is better to choose = ί. When the stomach contains Nl, the adhesion of Nike or (4) is excellent, and it is no electricity = 电镀 of plating film A5 There is no _ limit. Specifically, ~ΙΟμηι, more preferably 丨~5哗. Especially 』 = Ϊ Ϊ 厚 can be thick 1 thick 'can be (4) to form a large cross-sectional area "wiring = when the metal wiring can be made The strength is improved, which is the preferred method. The surface/1 surface residual 働 働5 on the correct f film in the part of the circuit to be formed into the circuit trench μ8μ conductive ^ aspect can also prevent the formation of circuit trenches Electrolytic forging film. Therefore, even if a complex t-microcircuit is formed at a narrow pitch interval, no excess plating film remains between the circuits, so that it is possible to prevent problems such as knowing or migration. - 2 implementation aspects] gas thunder, -1 real, in the sample 'describes the formation of electric circuit board on the planar insulating substrate, but the invention is not limited to this. Specifically, npj use has A three-dimensional three-turn insulating substrate, which is also a circuit board (stereo circuit board) of an electrical circuit that is correctly wired, and the second embodiment will be described below. Method for manufacturing a three-dimensional circuit substrate. Description of the steps to manufacture the second to second embodiments Each step of the three-dimensional circuit substrate = "the resin film A2 is formed on the surface of the three-dimensional insulating substrate having a high and low difference portion as shown in Fig. 10 (4). Further, this step corresponds to the film forming step 53 201146113. The material A51 can be used to produce a vertical resin molded body, and is not particularly limited. The molded body is preferably formed by injection molding, and the production efficiency is good. The composition of the resin material used to obtain the resin molded body is obtained. For example, a polycarbonate resin, a polyamide resin, various polyester resins, polyphenylene sulfide, etc. 曰' The method for forming the resin coating A2 is not particularly limited. Specifically, it is the same as the first embodiment. Forming method, etc. '5', for example, J is 'as shown in Fig. 10 (9)', in the insulating layer formed with the resin film A2, and the outer surface of the film A2 is lasered or mechanically machined. It is a T-Royal A3 with the depth of the shape. The laser processing or machining of A3 is such that the resin film A2 is the thickness of the film A2. Further, this step is equivalent to the portion in which the electroless ore is formed into an electric ore layer by the circuit trench A3, that is, the electric circuit forming portion. Then, as shown in FIG. 10(C), the surface of the resin film A2 on the surface of the circuit trench A3 and the surface of the resin film A2 is covered with a catalyst metal (electrical ^10) The catalyst is covered by the catalyst. The catalyst is coated with ^1G(C) to cover the metal ruthenium 5 on the surface of the circuit trench 3 and on the surface of the resin film 2. As shown by 1G(D), Wei Liguan silk material A51 can cover the resin with A3 WL, and the catalyst metal A5 can be formed on the surface of the three-dimensional insulating substrate A51 on which the circuit groove|film is formed. On the other hand, the catalyst metal A5 coated on the resin and the surface is removed from the resin film A2 and placed on the resin film A2. In addition, this step corresponds to the film edge 1G ( In the case of E), the electroless electricity is applied to the three-dimensionally intact resin film A2. Thereby, the reading layer A6 is opened/formed on the portion of the residual metal A5. The Weiza A3 or the through-hole VIII 4 54 201146113 part is formed on the electroplated layer A6 as an electrical circuit. In addition, the step is ♦ in the electroplating process step. As shown in FIG. 1A, the circuit substrate A6 can be formed, which forms an electrical circuit A6 on the three-dimensionally shaped three-dimensional insulating substrate A51. If the circuit substrate A60 is formed, even the insulating substrate The line width and the line spacing of the electrical circuit formed thereon are narrow, the adhesion between the insulating substrate and the electrical circuit is also high, and the electrical circuit is not easily damaged. Further, the circuit substrate of the present embodiment is even on the three-dimensional circuit substrate. [Embodiment of the present invention] The present invention relates to a method of manufacturing a multilayer circuit substrate using an additive method and a method of the present invention. Multilayer circuit board manufactured by the manufacturing method. θ In recent years, portable information terminal devices, computers, 1 peripheral devices, and various information home appliances, such as mobile phones, have been rapidly becoming more highly functional. In the circuit boards mounted on these electrical devices, the electrical circuits are also required to have higher densities. In order to realize these circuits. In order to increase the density of the substrate, it is desirable to form a method in which a wire having a narrower line width and a line spacing can be accurately formed. In a high-density wiring, problems such as short-circuiting or migration between wirings are likely to occur. In the wiring of the thinner width, the mechanical strength of the wiring is lowered, and the electric power is easily cut off due to the charging factor. Furthermore, the number of stacks is increased = the number of the bumps generated on the surface is increased, and the surface is formed to be formed. The fine circuit becomes difficult. ^The method of forming the circuit of the circuit board is known as the subtraction method or the addition method. The ft method is a gold that is to be formed outside the part of the metal frame. The method of going to (subtracting), (10) into a circuit. On the other hand, the additive method is a method of performing electroless plating, (10) silk path on the base 2 electric part. In the same way, the subtraction method is a method in which the thick metal of the side film is entangled in the gold to form a circuit. If this method is used, the metal portion of the removed portion is removed, and the additive method can form the electric film only on the portion of the metal wiring to be grounded, so that the metal is not wasted. From this point of view, the additive method is preferable. The full additive method of the representative domain method of the present invention is such that, in the form of τ, the surface of the insulating substrate is coated with the electric money catalyst. Then, in the electricity money J; into a photoresist layer. Then, through the reticle forming the predetermined electrical connection, the noise is matched. Then, the circuit is developed. For the development, the table of Fig. J is subjected to electroless electricity to form a line on a portion of the circuit pattern. By these steps, an electrical circuit can be formed on the insulating substrate. > - ^ In the above conventional additive method, when a lightning supply is applied over the entire surface of the insulating substrate, a plating film can be formed in the photoresist. Fine, when you do not enter the scene, you may not be able to form part of the circuit. This is because the plating catalyst is coated on the entire surface of the insulating substrate or the paste is applied, and the line width and the test are narrow. In order to solve these problems, we have considered the application of, for example, Japanese Patent Laid-Open No. 58-186994. Money, the protective film on the wire and the wire. The groove of the circuit pattern and the through hole. Next, at the insulating base i ==:, 匕 layer. Then, the resin protective film was peeled off, and the activation layer was left only on the groove S^ and the inner wall surface of the through hole. Then, the insulation $electricity=selectively selects the technique of the activated groove and the through hole. The applicant has already left the electric bond catalyst for electroless plating at a high f. For example, a part of a circuit pattern or an inner wall surface of a through-hole, etc., is required to be patented for the purpose of the invention. (曰本特愿2008-118818 ====狮_1嶋, etc.). Reference b will be explained with reference to FIG. And f is applied to the surface of the insulating substrate & the resin film is applied, and the groove "go through hole d 56" having the desired circuit pattern is formed on the insulating substrate a to which the resin film b has been applied. 201146113 The bottom surface of the trench e in the crucible is the same as the surface of the insulating substrate a. However, it does not matter whether the trench c is excavated deeper than the surface of the insulating substrate a. Next, as shown in Fig. 17 (: No, in The surface of the trench c and the through via d and the surface of the resin film b are coated with an electrocaloric catalyst e. Here, the neocatalyst contains its precursor in the reddish color. Next, as shown in Fig. 17D, the resin is used. The film b is peeled off to leave a plating catalyst e on the surface of the trench c and the through hole d. Then, as shown in Fig. 17E, an electroless ore film f is formed on the remaining portion of the plating catalyst e to obtain A circuit board 形成 of a conductive layer having a high precision is formed on the surface of the trench c and the through-hole d. Further, in recent years, a method for manufacturing a multilayer printed circuit board having a high density is described as follows: The mesoporous layer method of interlayer and pores is well known, and such The layering method, if the application diagram is as ruthless, firstly, as shown in Fig. 18A, the circuit i ί which has formed the ith electrical circuit h is not the surface method of the circuit substrate g. In addition, the formation path of the first circuit h, as shown in Fig. 18B, forms an insulating layer i on the surface of the electric, base, g on which the first circuit h has been formed. As shown in (10), a resin film is formed on the surface of the diarrhea.] Next, as shown in FIG. 18D, a film of a resin film is formed from the second layer of the second layer. (4) The pattern k and the interlayer connection hole m. The circuit diagram 荦 to the H-connection hole m: to the ith circuit h of the circuit board g, and the surface of the second circuit is connected, on the surface of the resin skin j, The circuit pattern (4) is overlaid on the surface of the first circuit h and the surface S of the exposed first circuit h can be simplified for the purpose of the operation. Next, as shown in Fig. 18G, For the (3), the electroless plating is performed, and the electroless plating is formed on the portion of the circuit pattern k of the residual electric ore catalyst n. In the plating film, the second electrical circuit p is formed on the insulating layer i. Further, the electroless plating film is grown from the second circuit h located at the bottom of the interlayer connection hole „1, thereby filling the interlayer connection with the electric metal The hole m is formed by the second circuit P and the circuit board g which form the metal! The circuit h is connected to the q column and connected between the layers. π However, if the part of the circuit pattern k and the layer are connected to the hole m at the same time as the electroless electric wire, the line width of the crotch portion is very iced. The depth is also very shallow, so the circuit part is deeper when the shaft conductor is formed, so the electric age is required to fill for a long time: == The conductor of the final part is formed at the end of the electroless plating, as shown in the figure l8G, = even, with The metal filling of the hole is slightly sufficient, and it becomes a hole for connection with the system. On the other hand, if the electroless plating is used for the inter-layer connection charge, the circuit portion will form a too-bound body and become prone to a short one. In addition, the volume of the hole for narrowing the interlayer connection is proposed in the literature, so that the metal in the short-term hole is used. Since the filling is performed, the depth of the interlayer connection hole is made smaller to reduce the diameter of the interlayer connection hole. However, as far as the former is concerned, there is a good implementation in the design of the circuit substrate. In addition, in the latter case, the contact area between the connection hole and the circuit becomes small, and the reliability of the connection between the layers is lowered: the diameter of the connection hole is reduced to the width of the wiring groove for the circuit pattern or ^ In this case, the metal filling can be completed in a short time, but at this time, the inner wall surface and the bottom portion of the interconnecting hole are grown, and the inner surface of the interconnecting hole is also grown, and it is easy to generate voids in the inside of the metal post. 〇ΐΐϋΐ目ΐ* provides a method for manufacturing a multilayer circuit substrate, which can be solved in the case of a super-addition method when a magnetic circuit board is used. It is also possible to U = fill the hole sufficiently and well to fill the metal, and prevent the formation of the circuit portion. The manufacturing method of the multilayer substrate of the present invention is connected to the electric plate of the electric shaft lining machine (four) Build 58 201146113' 1 circuit# The first insulating layer of the first insulating layer is formed on the circuit forming surface of the circuit board: a step is formed; an opening is formed on the first insulating layer from the outer surface, so that the opening step is formed; the first electric is exposed a step of forming a metal post on the circuit to form a metal post; forming a second insulating layer on the top of the first insulating layer and the top of the metal post; forming a second insulating layer a circuit _ forming step of forming a groove having a thickness of at least the resin film and a predetermined depth of the second 乂 以及 and a predetermined rotation groove and a circuit pattern; The resin film a catalyst overcoating step of coating an electric forging catalyst on the surface of the pattern of the hί road; a step of removing the film from the resin film by the , , , , and a*; The edge layer is implemented with electroless ore, and the second electrical circuit is formed on the first insulating layer and the second insulating layer on the first and second insulating layers of the electrical and electronic devices. At the same time make the = circuit board (four) 丨 Wei circuit through the metal column in the connection = step. According to the above method, since the second insulating layer forming step, the opening forming step, and the metal post forming step are used to fill the interlayer connection hole with the Wei metal in advance, the unintended circuit portion forms a multi-conductor, It is possible to spend time fully connecting the layers with (4) filler metal. Further, since the circuit does not form as described above, the plating film does not grow from the side of the circuit pattern, and the generation of voids can be prevented, so that the metal filling condition is good. New, after the completion of the metal filling of the inter-layer pores, the second insulating layer forming step, the film forming step, the circuit pattern forming step, the catalyst-separating step, the film removing step, and the electric money step are performed, as shown in FIG. 17A to FIG. The addition method described in 17E forms the conductor of the circuit portion, so that a fine conductor having good precision can be formed in a short time, and an unnecessary conductor can be prevented from being formed in the circuit portion. According to the above, even if the fine circuit pattern and the interlayer connection hole are mixed, the additive method can be suitably applied to smoothly manufacture the multilayer circuit substrate by the build-up method. ~ The "metal pillar" formed by the metal pillar forming step may have a thickness that is thicker than the conductor layer constituting the electric circuit, and may have a conductive 59 201146113 convex portion that protrudes in an approximately vertical direction on the electric circuit, and the shape thereof is not Specially limited. For example, in addition to a columnar shape having a fixed cross-sectional shape such as a column or a corner post, the cross-sectional shape may be changed in the longitudinal direction or in a truncated cone shape. The "groove" of the circuit pattern formed in the circuit pattern forming step is mainly a groove, and the "opening" is, for example, an opening for the electrode pad portion. However, the corresponding condition is the hole for interlayer connection (different from the hole for interlayer connection completed by the previous metal filling). In addition, according to the above configuration, since the resin film is formed on the outer surface of the second insulating layer/on the outer surface of the second insulating layer, the total thickness of the second flag and the thickness of the second insulation and thickness are determined. The resin film is removed, so the second (4) processing is performed in the portion of the circuit pattern. Therefore, the bottom surface of the circuit bribe is located at a position "below the outer surface of the second insulating layer" to form a part or all of the outer surface of the second insulating layer of the buried cake constituting the electric circuit. Gentleman's fruit, add the thickness of the conductor layer 'and ensure that the electric 'ϋ ί the thickness of the body layer protruding from the second insulating layer, protect the ^ = , , , color edge, Yue Xiong Luo 'eliminate or reduce on the circuit forming surface The bumps produced. The bottom surface is decorated with steps (4) The top of the gold flank from the Kushiro pattern: the top two pad conductor layer from the outer surface of the insulation layer 丄 = the position of the surface, it is a two-plated metal filled to the bottom of the circuit pattern, making the metal face - the bottom surface of the pattern is excavated to the outer surface g surface of the first insulating layer: =- 201146113 The edge of the column is opposite to the surface of the filament, but the top of the golden age is stopped at the top of the growth phase before the growth stops. After the metal surface forming step of the pattern is formed, the top of the metal pillar is removed to the electric pole. In the circuit pattern forming step, the top of the metal pillar or the large exit pupil can be surely achieved by modifying the top of the metal pillar. The position is such that the top of the metal post does not protrude from the bottom surface of the circuit pattern. In the step of opening ί, the electroless magnetic film is used to make the electric ore film from the dew = that is, the electric deduction path is regarded as the electroless Wei, so that the gold can be formed reasonably. In addition, the present invention can also be formed in the metal column. In the step, after the η surface, the _ surface of the opening, and the surface of the exposed electrical circuit are coated with the electroless electroless plating, the surface of the first insulating layer is removed by performing electricity: electricity 1 ΐί Electroplating metal deposited on the outer surface side of the color edge layer. In the case where it contains: dissolve ======== On the insulating layer, if the resin film is removed from the surface of the insulating layer, the circuit can be prevented, and the multilayer circuit substrate can be prevented. The multi-residue circuit board manufactured by the above manufacturing method. Therefore, even if the fine circuit pattern is connected to the ground, the metal is sufficiently filled in the interlayer connection hole, thereby producing a multilayer circuit substrate which causes a problem such as a short circuit. The scoop conductor is not easy 61 201146113 = 艮p, and the third embodiment of the present invention includes the following technical contents. May 3rd Item 1. A method of manufacturing a multilayer circuit board having interconnected electrical circuits and interlayer connection holes, comprising: in the circuit board on which the first electrical circuit is formed, the shaft surface is insulated The first step of the layer formation step; forming an opening from the outer surface on the first insulating layer of 5 hai, so that the first! The exposed opening of the electrical circuit forms an if姊 yarn step of filling the opening with the metal clock metal on the first electrical circuit to form a metal f; on the outer surface of the first insulating layer and the top of the metal pillar a second insulating layer forming step of the layer; a skin forming step of the outer film of the second insulating layer; and a total of a thickness of the fd day skin and a thickness of the second insulating layer formed on the outer surface of the resin film The above ί slots and/or openings are used to form a circuit pattern of the circuit pattern, and the portion of the first gradation pattern and the metal _: J circuit, and the first circuit of the insulating layer is transmitted through the metal column Electroplating step of connecting between layers. The first electrical method of the circuit board: == step; the portion of the electric circuit in which the bottom surface of the board is exposed and protruded to form the circuit pattern circuit pattern is regarded as the electric thin portion: , the first request of the top of the ih metal (four) Item 3-3. If the request item 3-1 is a method of the present invention, in the circuit pattern forming step, the bottom surface of the manufacturing side of the substrate is exposed or protruded (four) manner to form the Wei _ jin zhi's not from the circuit pattern method' The manufacturing method of the circuit board of the ί 在 在 = = = = = = = = = = = 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 After that, the position of the bottom surface of the top of the metal post will be exposed, and the circuit diagram will be exposed or protruded in the circuit. The method of manufacturing the Rulu substrate of any one of the items of the column of the I column is not to be found in the top of the column of the I column. = layer electric power = the electroless plating is used to grow the electroplated film, whereby (4) metal plating is filled with electricity to find the item 3-7. As described in any one of claims 3-1 to 3-5, the manufacture of the substrate The method 'where' in the metal column forming step, the electric surface, the inner wall surface of the hole and the exposed first! The surface of the electrical circuit is covered with minerals, and then the plating metal deposited on the outer surface side containing the first insulating layer is removed. The method of manufacturing a road board according to any one of the preceding claims, wherein the resin fine layer can be dissolved or removed from the insulating layer by a predetermined liquid enthalpy or The multilayered circuit board manufactured by the method of the invention described in any one of the claims 3-1 to 3-8. According to the present invention, even if the fine circuit pattern and the interlayer connection hole are mixed, the additive method can be suitably applied, and the multilayer circuit board can be smoothly manufactured by the build-up method. However, since the electric circuit is buried in the insulating layer, it is possible to ensure the mechanical strength of the circuit to protect the circuit, prevent the edge of the circuit from falling off, and prevent the occurrence of bumps on the circuit forming surface. [Embodiment 3] FIG. 13 is a partial plan view showing the structure of the electric circuit F27 of the multilayer circuit board π of the present embodiment, and the arrangement of the interlayer connection holes F21 (with the metal post F22). As shown in the figure, in the present embodiment, the multilayer circuit substrate F of the electrical circuit F27 and the interlayer connection hole F21, that is, the via holes are connected to each other, can be manufactured. The circuit F& includes a wiring F27a having a fine line width and a pad portion F27b for electrodes. The electrode pad portion F27b is provided to overlap the interlayer connection hole F21. The I-I line in Fig. 13 indicates the cutting position of the end view of Figs. 14 to 16. In Fig. 14, reference numeral F10 is a circuit board, symbol Fli is an i-th electric circuit, symbol 63 201146113 嘌 symbol F21 is a hole for interlayer connection, symbol F22 is a metal pillar, and symbol 2 is a resin film, symbol F24 is a resin film, symbol F25 is a circuit diagram, two F26 is an electroplating catalyst, symbol F27 is a second electric circuit, and symbol F3 shows the entire insulating layer in which the insulating layer F20 and the second insulating layer F23 are combined. As shown in FIG. 141, in the multilayer circuit board π, the second electric circuit Fn is provided on the road substrate F10, and the second electric circuit F27 is provided on the insulating layer F3 (the first insulating reed F20 and the second insulating layer F23). The upper insulating layer F30 is stacked on the circuit board π. The first electric circuit F11 and the second electric circuit F27 are connected to each other through the interlayer connection holes F21 (and the metal posts F22) provided on the i-th insulating layer F2. <Circuit Substrate Preparation Step> In the manufacturing method of the present embodiment, first, as shown in FIG. 14A, the circuit board fi (the circuit board preparation step) in which the first electric circuit F11 is placed is prepared. In the case of 14A, the first circuit F11 is placed on the surface of the circuit board, but may be buried on the surface of the circuit board F1. Further, the method of forming the first circuit Fn is not closed. The profitable method is formed by subtracting the method or the addition method to know the circuit formation method. Furthermore, the 'secret substrate' can form a circuit in a single φ or a circuit on both sides. Further, it may be a multilayer circuit substrate. The circuit board F10 can be any organic substrate which is conventionally used in the manufacture of a multilayer circuit board, and is not particularly limited. Specific examples of the organic substrate include, for example, an epoxy resin, an acrylic resin, a polycarbonate transesterification, a polyimide resin, a polyphenylene sulfide resin, a polyphenylene ester, and a cyanate resin. A substrate composed of a resin such as a double-stranded amine resin. The pattern of the circuit board no may be a sheet, a film, a prepreg, or a molded body having a two-dimensional shape, and is not particularly limited. The thickness of the circuit board is not particularly limited. For example, when g is a sheet, a film, or a prepreg, the thickness may be set to about 1 to 500 μm, and more preferably about 20 to 200 μm. The detailed description of the circuit board F1A is the same as that of the first insulating layer F20 described below. <Insulation Layer Forming Step> Next, as shown in Fig. 14B, the surface of the circuit board F10 on which the jth circuit Fu is provided (circuit opening & surface formation) is opened as the first insulating layer ρ2〇 ( The first insulating layer forming step). The aspect of the first insulating layer F20 is not particularly limited. Specifically, for example: 64 201146113 A sheet, a film, a prepreg, and a three-dimensional shaped body, or formed of a resin solution. The thickness of the first insulating layer F20 is not particularly limited. Specifically, when the film is a film or a prepreg, it is preferably set to, for example, 10 to 2 Å μm, and more preferably 2 to 100 Å. Further, the first insulating layer F2 may contain particles such as cerium oxide particles. For example, pre-pressurization may be performed on the surface of the circuit board F10 to be expanded and bonded, and then hardened to form an i-th = hot press to be hardened. Alternatively, the i-th insulating layer F20 may be formed by coating the machine solution ' on the surface of the circuit board F1 (four) and then hardening it. In addition, 2 tools such as a mold and a frame tool are used to place the insulating layer material, and the pressurization is performed to harden one, and the fine molded body ' can also be stacked on the sheet, the film or the prepreg; the material obtained by J 2 ^ is stacked on the circuit. On the surface of the substrate, it is hardened by adding = ^ sheet =, or it is hardened by heating and pressing, and the three-dimensional shape is formed. "It is possible to use each of the conventional polyacrylic acid used in the manufacture of a multilayer circuit board. Resin, polycarbon m Asia!! t 1 shouts secret lipids, polyphenylene resin, cyanate ester tree 曰 魏 魏 脂 魏 魏 魏 魏 魏 魏 魏. ^Manufacture of Chinese coffee organic base

剂卢#此」 然将別限疋。具體而言,例如:雙酚A 1¾乳树知、雙酚F型環氧樹脂、雙s 錄之物胸縮合編、^ .樹脂,亦可組合使用2種以上。 ⑽用上述各%福知以及 -使並^二j上述各樹脂構成基材時,一般而言,為了硬化,會 65 201146113 其他並無特別限定。具體而言’例如:二氰二胺、苯酚系硬化劑、 酉文針糸硬化劑、氨基三嗪盼酸系硬化劑、氰酸醋樹脂等。 該本紛系硬化劑,例如:盼搭型、芳烧型、萜烯型等硬化劑。 為了更進一步賦予阻燃性可使用例如經過磷變性的苯酚樹脂或是 經過碟變性的氰酸酯樹脂等。另外,關於該硬化劑,可單獨使用上 述各硬化劑,亦可組合使用2種以上的硬化劑。 另外,雖然並無特別限定,惟由於係利用雷射加工形成電路圖 案,故宜使用對lOOmn〜4〇〇nm波長範圍的雷射光的吸收率良好的 樹脂。具體而言,例如聚醯亞胺樹脂等。 另外’該絶緣基材(絶緣層)亦可含有填料。該填料可為無機微 粒子,亦可為有機微粒子,並無特別限定。若含有填料,則在雷射 加工部填料會露出,填料的凹凸可提高電鍍與樹脂之間的密合性。 _構成該無機微粒子的材料,具體而言,例如:氧化鋁(Al2〇3)、 氧化鎮(MgO):氮化删(BN)、氮化紹(A1N)、二氧化石夕(Si〇2)、鈦酸 ,(BaTi〇3)、氧化鈦(Tl〇2)等的高介電常數填充材料;硬鐵氧磁體 f的磁性填充材料:氫氧化鎂(Mg (ΟΗ)2)、氫氧餘(A1 (QH)2)、三 氧化錄(Sb203)、五氧化録讲2〇5)、胍鹽、领酸鋅、翻化合物、硬脂 $等^無機系阻燃劑;滑石(Mg3(Si4〇iG)(〇H)2)、硫酸鋇(BaS〇4)、 石反-文,’弓(aCCb)、雲母等。關於該無機微粒子,可 合使用2種以上。該等無機微粒子,由於熱傳導 吊數、阻燃性、粒徑分布、色調的自由度等很高,故 ίΓί能選雜發揮的情況下,進行適錄合以及粒徑設 t 達到高度填充化之目的。另外雖謎無特別限定,惟 且^用平句粒控在絶緣層之厚度以下的填料,宜使用平均粒徑_ μΠ1的填料,更且使用平均粒徑0.05μιη〜5μιη的填料。 另外’該無機微粒子,為了提高在該絶緣基 面處理。另外,該絶緣基材,為了提^該無^ 胺ϋ季具體而言,例如:環氧魏系、疏基魏系、 土夕几糸、乙烯基石夕烧系、苯乙烯基魏系、甲基丙稀酿氧基石夕 66 201146113 二觸氧基魏系、鈦酸鹽㈣的魏偶合劑等。關於該石夕 烧偶^劑,可单獨使用上述魏偶合劑,亦可組合使用2種以上。 八心外’魏緣紐,為了提高該無機微粒子在魏緣基材中的 二放,亦可含有分散劑。該分散劑並無特別限定。具體而言 ΙλΪ,、山,龄、、院基聚醚胺系、高分子系的分散劑等。 〜刀政劑’可單獨使用上述分散劑,亦可組合使用2種以上。 另外,關於該有機微粒子,具體而言,例如:橡膠微粒子等。 ^卜,例如當電路基板F1G以及第丨絶緣層F2G使用預浸材 H可/電路基板F10的表面(電路形成面)上疊合帛1絶緣層 F20 ’加熱加壓堆疊使其硬化。 構歧路基板F1G的素材種_及躺翻亦可與構 ,第1、、、色緣層F20的素材種類以及樹脂種類不同。然而,從電路美 F10與第1絶緣層F2〇良好密合堆疊的觀點考f,宜為彼此相性 良好的不同種類,在典型上彼此更宜為相同種類。 <開孔形成步驟> ' 接著,如圖14C所示的,從第1絶緣層F2〇的表面(外 行雷射加工,以在第1絶緣層™的表面(外表面)上形成層間 連接用孔F21(開孔形成步驟)。此時’層間連接用孔F2 基板F10的第1電路F11 ’使該第i電路Fn露出。另外,♦ 工及其周邊技術的詳細説明,以其他步驟所記載之雷射加工&盆^ 邊技術的詳細説明為準’與其相同。 八。 另外,在因為雷射加工而露出的第!電路FU之上殘 絶緣層F20的樹脂殘渣亦即膠渣(圖中未顯示)。膠渣會成為 況不良的原、因,故宜利用去膠渣處理除去。關於去膠渣處理^ 用例如浸潰過錳酸溶液以溶解除去膠渣等的習知方法,並盔 定。然而,亦可因應狀況省略去膠渣處理。 义 <金屬柱形成步驟> 接著,如圖14D所示的,在露出之第1電路Fu上, 電解電鍍或電解驗,用電鍍金屬填充該賴連接用孔阳,义 間連接用孔F21形成金屬枉F22(金屬柱形成步驟)。另外,當 67 201146113 時’第1電路FU可當作電錢核,從第1電路FU開始 ΐί電^膜。另一方面’當實施電解電鑛時,在第1絶緣層F20的 内壁面以及所露出之第1電路F11的表面彼覆電 二二十電鍍觸制1覆部位實施無電解電鐘之後實施電解 ,鍍,错此’用電鍍金屬填充開孔F21,之後,將在包含 2 F20的表面在内㈣!絶緣層刚的外表面側析出之電鍵金屬除 去。 化金!??F22的形狀、大小、間隔等並無特別限定。具體而言, 歹1·且:約略圓柱狀高度在5〜200μιη左右,底面的直徑在10 :台狀。另外’亦可為角柱狀、圓錐台狀或角 絶緣侧㈣成長到第1 ㈣=Γί等方ΐ,便可在後述第2絶緣層形成步驟形成第2絶 肪别以及在皮膜形成步驟形成樹脂皮膜F24之前,對使第 右與第2電路⑽在層間連接的層間連接用孔切充^ 充並形成旎夠防止孔隙產生的良好金屬柱F22。 、 <第2絶緣層形成步驟> 接著,如圖14E所示的,在第!絶緣層剛的外表面 柱F22的頂部形成第2絶緣層防(第2 ^ =阳與第!絶緣層F2。的情況相同。具體而:層色 可使用例如片材、薄膜、預浸材以及三維形狀的成形體· ί由塗^^者產該第2絶緣層F23的厚度並無特別i 、體而5 為片材、細、預浸材時,宜為例如3〜, 更宜為5〜40μηι左右。另外,該第2絶緣層F2 矽粒子等的無機微粒子。 3有一軋化 關於第2絶緣層F23,例如,可在第!絶緣層F2〇的外 &片材^膜以及觀材’域使魏_合,之舰其硬化 亦可在第1麟層F2G的外表面塗佈麟驗 ^ 形。另外,亦.可使用模具以及框具等工具,置入形成 68 201146113 F23的材料,加壓使其硬化,以形成三維形狀的成形體。 該第2絶緣層F23可採用以往多層電路基板製造中所使用的各 種有機基板’並無特別限定。關於有機基板的具體例,例如:以往 多層電路基板製造中所使用的例如由環氧樹脂、丙烯酸樹脂、聚碳 酸酯樹脂、聚醯亞胺樹脂、聚笨硫醚樹脂、聚苯醚樹脂、氰酸酯樹 脂、苯並噁嗪樹脂、雙馬來亞醯胺樹脂等樹脂所構成的基板。另外, 第2絶緣層F23的詳細説明’以先前記載之第丨絶緣層F2〇的詳細 説明為準,與其相同。 另外’構成第1絶緣層F20的素材種類以及樹脂種類亦可與構 成第2絶緣層F23的素材種類以及樹脂種類不同。然而,從第i咆 緣層F20與第2絶緣層F23良好密合堆疊的觀點考量,宜為彼此相 性良好的不同種類,在典型上彼此更宜為相同種類。 <皮膜形成步驟> ' 接著,同樣如圖14E所示的,在第2絶緣層F23的外表面上形 成樹脂皮❹24(舰形成麵)。劃旨舰(光阻)F24卩要能夠在後 述皮膜除去步驟除去即可’其他並無特別限定。樹脂皮膜似宜為 y用既定液體溶解或膨潤而輕易地從第2絶緣層F23的表面溶解除 膜。具體而言,例如’由可用有機溶劑或鹼 讀的可溶麵賴構成的魏,或纟可職定液體 $ 的膨潤性樹脂所構成的皮料。另外,膨潤性樹脂皮 笛9不會概定液·解,但會因為受卿潤而容易從 F23的表面剝離的樹脂細之外,還包含會被既定液體 ^ ’且會因為受卿潤或溶解岭轉第2絶緣層 而離的樹脂皮膜’或會被既定液體溶解,且會因為溶解 膜二二絶緣層F23的表面剝離的樹脂皮膜。使用該等樹脂皮 時樹層^將樹脂皮卿利除去。_旨皮膜除去 飛散“二在該樹脂皮膜上的電_媒會飛散,所 止該丨皮膜可輕錄絶緣層表面順利除去時,便可防 69 201146113 第2 滅ί法並無_限定。具體而言,例如,在 i )上塗佈可形成樹脂皮膜腿的液狀 ίΐ’ίίΐ 的方法,或是在支持基板上塗佈該液狀材料之 H乾喊所形成的樹脂皮膜轉印到第2絶緣層F23的表面上的 其他方法例如:在第2絶緣層f23的外表面(表面) ΐ冰形成之樹脂皮膜F24所構成的樹脂薄膜的方法等。 的方法,並無特別限定。具體而言,例如,以 在S知的旋轉塗佈法或棍塗佈法等。 m Ξ 皮膜F24的材料,只要是能夠被既定液體溶解或 Ϊ 絶緣層F23的表面溶解除去或剝離除去的樹脂即 L’/、ί並無特別限定。宜使用對既定液體的膨潤度在5〇〇/〇以上的 5^/以職在1〇〇%以上的樹脂,最好是使用膨潤度在 另外,當膨潤度太低時,樹脂皮膜會有難以剝 離的傾向。 ㈣ίί ’ f脂皮膜的膨潤度(sw)可根據膨潤前重量―)以及膨 ^ 弋 ^⑻以「膨潤度 SW= ([m⑻—m(b)]/m(b)} χ1〇〇 (%)」 縣、皮膜,利用在第2絶緣層F23的表面上塗佈彈性體的 予液或礼狀液之後使其乾燥的方法,或是在支持基材上塗佈彈性 f的懸洋液或乳狀液之後,將其乾燥後所形成的皮膜轉印在第2絶 緣層F23的表面上的方法等,便可輕易製得。 -生體的具體例,例如:苯乙婦—丁二烯系共聚物等的 了辉糸·體’丙烯酸料、共聚物等的丙烯義彈性體,以及 系彈性1等。若利用該等彈性體,便可藉由調整分散成懸浮液或乳 生2脂粒子的交聯度或膠化度等特性而輕易形成具備 所期望之膨潤度的樹脂皮膜。 ^另外,該等樹脂皮膜特別宜為膨潤度相依於膨潤液的pH值而 變化的皮膜。若制鱗歧,触碰賴馳覆麵中的液性 f件與後述皮膜除去步驟中的液性條件不同,便可在觸媒披覆步驟. 中的PH值之下使樹脂皮膜F24對第2絶緣層F23維持很高的密合. 201146113 ί除f在皮膜除去步驟中的pH值之下使樹脂皮膜F24輕易地被剝 的牛驟i12〜14的範圍的鹼性溶液中使樹脂皮膜膨潤 6〇=^,’=^=_觸媒金鱗狀溶液_潤度宜在 卜,#〜,,在4〇下,且對該驗性溶液的膨潤度宜在50%以 上,更,在100%以上,最好是在5〇〇%以上。 亥皮膜’例如:由具有既定量的絲的彈性體卿成的 中的来石配線板的形成圖案用的乾膜光阻(以下亦稱為dfr)Agent Lu #this" will be limited. Specifically, for example, bisphenol A 13⁄4 milk tree, bisphenol F type epoxy resin, double s-recorded chest condensate, and resin may be used in combination of two or more kinds. (10) When the base material is composed of each of the above-mentioned respective materials, and the above-mentioned resins are generally used, it is generally not particularly limited as long as it is hardened. Specifically, for example, dicyandiamide, a phenolic curing agent, a sulfonium hardener, an aminotriazine acid curing agent, a cyanic acid resin, or the like. The present hardeners are, for example, hardeners such as plucking type, argon burning type, and terpene type. For further imparting flame retardancy, for example, a phosphorus-denatured phenol resin or a dish-denatured cyanate resin or the like can be used. Further, the curing agent may be used singly or in combination of two or more kinds of curing agents. Further, although it is not particularly limited, since a circuit pattern is formed by laser processing, it is preferable to use a resin having a good absorption rate of laser light in a wavelength range of 100 nm to 4 Å. Specifically, for example, a polyimide resin or the like. Further, the insulating base material (insulating layer) may contain a filler. The filler may be inorganic microparticles or organic microparticles, and is not particularly limited. When the filler is contained, the filler in the laser processing portion is exposed, and the unevenness of the filler improves the adhesion between the plating and the resin. _ The material constituting the inorganic fine particles, specifically, for example, alumina (Al 2 〇 3), oxidized town (MgO): nitriding (BN), nitriding (A1N), and sulphur dioxide (Si 〇 2 High dielectric constant filling material such as titanic acid, (BaTi〇3), titanium oxide (Tl〇2), etc.; magnetic filling material of hard ferrite magnet f: magnesium hydroxide (Mg (ΟΗ) 2), hydrogen and oxygen (A1 (QH) 2), samarium oxide (Sb203), pentoxide recording 2 〇 5), strontium salt, zinc silicate, compound, hard fat, etc. ^ inorganic flame retardant; talc (Mg3 ( Si4〇iG)(〇H)2), barium sulfate (BaS〇4), stone anti-text, 'bow (aCCb), mica, etc. Two or more kinds of these inorganic fine particles can be used in combination. These inorganic fine particles have high heat transfer number, flame retardancy, particle size distribution, and freedom of color tone. Therefore, when the type of the fine particles can be selected, the appropriate recording and the particle size are set to a high degree of filling. purpose. Further, although the mystery is not particularly limited, it is preferable to use a filler having an average particle diameter of _μΠ1 and a filler having an average particle diameter of 0.05 μm to 5 μm by using a filler having a flat particle size below the thickness of the insulating layer. Further, the inorganic fine particles are treated to improve the surface of the insulating substrate. In addition, the insulating substrate is specifically for the purpose of extracting the amine-free oxime, for example, an epoxy Wei system, a sulfhydryl group, a ruthenium group, a vinyl group, a styrene group, and a Alkyl propylene oxide Oxygen eve 66 201146113 Di-methoxy-Weiss, a titanate (tetra) Wei coupler and the like. The above-mentioned Wei coupling agent may be used singly or in combination of two or more kinds. In addition to the eight-hearted 'Wei margin, in order to improve the secondary release of the inorganic fine particles in the Wei edge substrate, a dispersing agent may also be contained. The dispersant is not particularly limited. Specifically, ΙλΪ, mountain, age, polyetheramine-based, polymer-based dispersant, and the like. The "Knife" can be used alone or in combination of two or more. Further, specific examples of the organic fine particles include rubber fine particles and the like. For example, when the circuit substrate F1G and the second insulating layer F2G are laminated on the surface (circuit forming surface) of the prepreg H/circuit substrate F10, the insulating layer F20' is heated and pressurized to be hardened. The material type _ and the reclining of the constitutive path substrate F1G may be different from the material type of the first and second color fringe layers F20 and the resin type. However, from the viewpoint that the circuit F10 and the first insulating layer F2 are well-closed and stacked, it is preferable that they are different types which are good in phase with each other, and are preferably the same kind as each other. <Opening Hole Forming Step> ' Next, as shown in Fig. 14C, the surface of the first insulating layer F2 is (external laser processing to form an interlayer connection on the surface (outer surface) of the first insulating layer TM) Hole F21 (opening forming step). At this time, the first circuit F11' of the substrate F10 of the interlayer connection hole F2 exposes the ith circuit Fn. Further, the details of the technique and its peripheral technology are described in other steps. The detailed description of the laser processing & basin technology is as follows. 8. In addition, the resin residue of the residual insulating layer F20 on the first circuit FU exposed by the laser processing is the slag ( It is not shown in the figure. The slag may become the original cause of the bad condition, so it should be removed by the desmear treatment. For the desmear treatment, a conventional method such as immersing the permanganic acid solution to dissolve and remove the slag is used. However, it is also possible to omit the desmear treatment in response to the situation. Meaning <Metal Column Formation Step> Next, as shown in Fig. 14D, on the exposed first circuit Fu, electrolytic plating or electrolysis, Filling the splicing hole with a plating metal, and connecting the symmetry F21 forms a metal crucible F22 (metal pillar forming step). In addition, when 67 201146113, the first circuit FU can be regarded as an electric money core, starting from the first circuit FU, and then on the other hand. In the case of the inner wall surface of the first insulating layer F20 and the surface of the exposed first circuit F11, electroless plating is performed after the electroless electric clock is applied to the surface of the first circuit F11, and electroplating is performed. After the opening F21 is filled, the key metal deposited on the outer surface side of the insulating layer immediately including the surface of the 2 F20 is removed. The shape, size, and interval of the gold foil are not particularly limited.歹1·和: The approximate cylindrical height is about 5~200μηη, and the diameter of the bottom surface is 10: Taiwan. In addition, it can be a columnar, truncated or angular insulation side (4) and grows to the first (four)=Γί In the second insulating layer forming step, a second permanent insulating layer will be described later, and before the resin film F24 is formed in the film forming step, the interlayer connecting holes for connecting the right and second circuits (10) to each other may be filled. ^ Fill and form a good enough to prevent pores Metal post F22. <Second insulating layer forming step> Next, as shown in Fig. 14E, a second insulating layer is formed on the top of the outer surface pillar F22 of the first insulating layer (2^ = positive and The same applies to the insulating layer F2. Specifically, the layer color can be, for example, a sheet, a film, a prepreg, and a three-dimensional shaped body. The thickness of the second insulating layer F23 is not produced by the coating. In particular, when the sheet is a sheet, a fine or a prepreg, it is preferably, for example, 3 to more preferably 5 to 40 μm. Further, the second insulating layer F2 has inorganic fine particles such as ruthenium particles. Regarding the second insulating layer F23, for example, it can be in the first! The outer & sheet ^ film of the insulating layer F2〇 and the viewing material field make the Wei-he, the ship hardened, and can also be coated on the outer surface of the first lining F2G. Further, a material such as a mold or a frame may be used, and a material forming 68 201146113 F23 may be placed and pressed to be hardened to form a molded body having a three-dimensional shape. The second insulating layer F23 is not particularly limited as long as it can be used in various conventional organic substrates used in the production of a multilayer circuit board. Specific examples of the organic substrate include, for example, an epoxy resin, an acrylic resin, a polycarbonate resin, a polyimide resin, a polystyrene ether resin, a polyphenylene ether resin, and a cyanide used in the production of a multilayer circuit board. A substrate composed of a resin such as an acid ester resin, a benzoxazine resin or a bismaleimide resin. The detailed description of the second insulating layer F23 is the same as the detailed description of the first insulating layer F2 先前 described above. Further, the type of material and the type of resin constituting the first insulating layer F20 may be different from the type of material and the type of resin constituting the second insulating layer F23. However, from the viewpoint of the good adhesion and stacking of the i-th layer F20 and the second insulating layer F23, it is preferable that they are different types which are good in phase, and are preferably the same kind as each other. <Thin film forming step> ' Next, as shown in Fig. 14E, a resin skin 24 (ship forming surface) is formed on the outer surface of the second insulating layer F23. The target ship (photoresist) F24 should be removed in the film removal step described below. The others are not particularly limited. The resin film may suitably dissolve the film from the surface of the second insulating layer F23 by dissolving or swelling the predetermined liquid. Specifically, for example, a leather composed of a swellable resin composed of a soluble surface which can be read with an organic solvent or a base, or a swellable resin of a pharmaceutically acceptable liquid of $. In addition, the swellable resin skin flute 9 does not have a liquid solution, but it is also finer than the resin which is easily peeled off from the surface of F23 by the scent of the scent, and also contains a predetermined liquid and may be affected by The resin film which is dissolved by the second insulating layer is dissolved or dissolved by a predetermined liquid, and the resin film which is peeled off by the surface of the second insulating layer F23 is dissolved. When the resin skin is used, the resin layer is removed. _The film is removed and scattered. "The electricity on the resin film will scatter. When the film is lightly removed, the surface of the film can be removed smoothly. It can be prevented. 69 201146113 The second method is not limited. For example, a method of applying a liquid film which can form a resin film leg on i) or a resin film formed by coating a liquid material on a support substrate is transferred to the first The other method on the surface of the insulating layer F23 is, for example, a method of forming a resin film composed of the resin film F24 formed by ice on the outer surface (surface) of the second insulating layer f23. The method is not particularly limited. For example, the material of the m Ξ film F24 is a resin which can be dissolved by a predetermined liquid or dissolved or removed by the surface of the insulating layer F23, that is, L which is known as a spin coating method or a stick coating method. '/, ί is not particularly limited. It is preferable to use a resin having a swelling degree of 5 〇〇 / 对 or more for a given liquid of 1 〇〇 % or more, preferably using a degree of swelling in addition to swelling. When the degree is too low, the resin film may be difficult to peel off. (4) ίί ' f The degree of swelling of the fat film (sw) can be based on the weight before swelling -) and swelling ^ 弋 ^ (8) with "swelling degree SW = ([m (8) - m (b)] / m (b)} χ 1 〇〇 (%)" The method of drying the pre-liquid or the ritual liquid of the elastomer on the surface of the second insulating layer F23 and drying it, or coating the elastic substrate on the support substrate. After the liquid or the emulsion, the film formed by drying the film formed on the surface of the second insulating layer F23 can be easily obtained. - Specific examples of the living body, for example, styrene-butadiene An acryl-based elastomer such as a fluorene-body acrylate or a copolymer such as a diene-based copolymer, and an elastic one or the like. If these elastomers are used, they can be dispersed into a suspension or a milk by adjustment. 2 The resin film having a desired degree of swelling is easily formed by the characteristics of the degree of crosslinking or the degree of gelation of the lipid particles. Further, the resin film is particularly preferably a film whose swelling degree changes depending on the pH of the swelling liquid. If the scale is different, the liquid material in the coating of the Lai is different from the liquid condition in the step of removing the film described later. The resin film F24 maintains a high adhesion to the second insulating layer F23 under the pH of the catalyst coating step. 201146113 ίIn addition to the pH in the film removal step, the resin film F24 is easily Peeling the bovine head i12~14 in the alkaline solution to make the resin film swell 6〇=^, '=^=_catalyst gold scaly solution _ moistness should be in Bu, #~,, under 4〇, Further, the degree of swelling of the test solution is preferably 50% or more, more preferably 100% or more, and more preferably 5% or more. The film of the sea surface is, for example, an elastomer having a predetermined amount of silk. Dry film photoresist for forming a pattern of a stone wiring board (hereinafter also referred to as dfr)

It i 顯影型的光阻經過全面硬化之後所得到的片 材或疋熱硬化性或驗性顯影型片材等。 單位的具_ ’例如:包含具有絲的單體 !的以=子中具有羧基的苯乙烯-丁二烯系共聚物 ίϋίί 細咖旨系共聚物等的丙婦酸系彈性體以及聚 2的彈性體的酸當量、交聯度或膠化度等便 度的,旨皮膜。另外,也容易形成相對於在皮膜除去步驟 膜液體的膨濁度更大’而會被該液體溶解的樹脂皮 供^ΐίϊ中的羧基在驗性水溶液中會使樹脂越膨潤,具有讓樹 ,皮,從第2絶騎F23的表面獅的侧。另外,酸# 1羧基的聚合物分子量。 田里係心母 具有絲的單體單位的具體例,例如:(甲基)丙稀酸 桂皮酸、巴豆酸、伊康酸以及馬來酸酐等。 … 關於該等具有絲的彈性體中的魏基的含有 為1〇〇〜2_,更宜為100〜·。當酸當量太小時(“的 對太多時)’與溶媒或其他組成物的相溶性會降低,導 電鍍的刖處理液的耐性會有降低的傾向。另外,當酸當 基的數量姆太少時)’雜性水溶賴獅性會有 ^ 另外,彈性體的分子量宜為1萬〜卿萬,更宜為2萬^50向萬, 71 201146113 ^子是2萬〜6萬。當彈性體的分子量太大時剝離性會 向,太小時粘度會降低,欲維持樹脂皮膜厚度均勻很 日 電解電鍍的前處理液的耐性也會有惡化的傾向。 、 中,,'、 另外,DFR以含有既定量之羧基的丙烯酸系樹脂、 ΐ、ΐΐΪίί脂、苯酚系樹脂、胺曱酸乙酯_脂等作‘樹脂成 OT2R〇5如日f f開_ —231刚號公報、日本二‘ 201851號公報、日本特開平u—212262號公報所揭示 面硬化所得到的片材,或市售的驗性^ 汾孓的DFR,例如,旭化成股份有限公司製的系列等 =卜’關於其他的樹脂皮膜,例如:含有羧基且以松香為 成1树脂(例如,吉川化工股份有限公司製的「Nazd繼、 ^以苯酚為主要成分的樹脂(例如,LEKTRACHEM公司製「104F」」) 樹脂皮膜F24,用習知的旋轉塗佈法或棍塗佈法 =脂=浮液或乳狀液塗佈在第2絶緣層F23的表面上之 ίΪ i 真空疊合機等工具將形成於支持基板上的 、第&ίί層F23的表面上之後使全面硬化,便可輕易形^ 下,另Ϊ 】的厚度’例如,宜在10叫以下,更宜在5μΓη以 =尸圖案F25在以雷射加工或機械加工形成以氏 右的ί ΪΓίΪ脂皮膜F24宜使用例如以由酸等量在100〜_左 轉繼的丙侧 卵,了上述之外,該樹脂皮膜F23亦宜具備以下特性,亦 緣亀輯麵. 72 201146113 綱;⑶成酿較高; '後會有詳述,惟在附著藥液’雖然文 •為酸性(pH值1〜3)水、容液其冰11/狀觸媒系統的情況下’全部 ΐϋΐ pH^f PH ^ ^ 浸潰於藥液中時,光阻不于住’是指當光阻成膜樣本 外,一般而言,Ιίίίίϋϊ ii解,:!能發揮光阻的功能。另 光阻膜厚為丄叫一 至:C ’况潰時間為1〜1〇分鐘, 用的驗性剝離藥液,雖工缺文後合為二艮。皮膜除去步驟所使 處理’惟並非以此為限。為了在般以浸潰或喷灑 製造步驟或減少材料損失等合 #卜雖」為了簡化 性,薄膜的彎曲性仍是必化^^而為了確保易處理特 或時間則隨意。如是,在貼合4時便為^〜靴,屢力 合的3層構造,惟並非以此為,二般ί形成用载體膜、覆蓋膜夾 然是最好的,惟也必在室溫下保存當 下乾膜的組成不會分離,f_不會降&=存。必該等低溫 由以上觀點’該樹脂虔腹-Γ ·& Μ义汗 個聚合性碑和細賴麵H在^子中至少具有1 .與⑼單體聚合的至少1種以上的單體ϋ斤種^上的皁體以及⑼可 開平7-28U37號公報、曰本^ 知技術’例如:曰本特 本特開2_—如携、日本特開厕 73 201146113 201851荨。關於(a)單體’例如:(甲基)丙烯酸、富馬酸、桂皮酸、 巴豆酸、伊康酸、馬來酸酐、馬來酸半酯、丙烯酸丁酯等,可單獨 使用’亦可組合2種以上使用。關於(b)單體,一般而言,例如:呈 非酸性且在分子中具有(一個)聚合性不飽和基者,惟並非以此為 限。以保持在電鍍步驟中的耐性、硬化膜的可彎曲性等各種的 可。具體而言’有甲基丙婦酸曱醋、甲基丙烯酸乙醋: :土丙烯酸異醜、甲基⑽酸正了酯、曱基丙烯酸第二丁醋、甲 丁醋、甲基丙烯酸2姻、甲基丙稀酸2侧: 赤可Ϊ丄還Ϊ醋酸乙烯醋等的乙烯醇的_、甲基丙烯腈、苯乙烯 苯乙烯衍生物等。另外利用在分子中具有—個上述聚合 或酸_聚合也可製得。再者,以能夠3維交聯 外,ί將it聚1的單f中選出具備複數不飽和基的單體。另 乂“S 胺基、酿胺基、乙婦基等反應性官能基導 巾含有縣時,樹脂中所含有峨基量的酸當量 〜卿,更宜為觸〜獅。當酸當量太低時 主要树脂宜為具備孰可塑性暫站古μ;丨丨取人此& 種 =特性亦可接枝而使其 =,_:5〇_左右,宜為_〜 ί外、若^曲性或電_附著藥液耐性(耐酸性)會降二 了提高著大藥液r: ^^ 制,亦可導入交聯點。 防止雷射加工時的熱變形或流動控 可塑劑當作酿物㈣; 74 201146113 言=如:甲基丙烯酸甲酷、甲基丙烯酸乙醋、甲基丙 ΐ :: 丁醋、甲基丙烯酸第二丁醋、甲基丙稀 外還有醋酸乙湘旨等的乙烯醇_類mu 和基的賊或酸_聚合也可製得。再‘多官口 = 二了=單,以外亦可包含其他二種以上的單^^單 稀酸酯、或聚丙二醇二甲基丙稀酸酯、聚乙二醇丙 =乙r—聚3:^/基丙烯s_的聚姑二幺甲基二 ,、二新戊四醇五甲基丙烯酸酯、三㈣^烯5 甲其二跡ίί五乙戰基本基)丙烧、含有胺基曱酸醋類的多官能 任二種。夂曰專。亦可為上述的單體或使單體反應的寡聚物的其中 填料並無特別限定,具體而言,例 _ =等=的=厚 其碎裂,並軸’粗粒經過切割者,惟亦可在分散時使 劑、光聚合性樹脂(光聚合引發劑)、聚合防止 質或顏料)、熱聚合引發劑、環氧基物 射加ίί^ί明的電路圖案形成步驟中,樹脂皮肋3,因為雷 相關係’必須利用雷射對光阻材力'The sheet obtained by the It i development type resist is cured after being fully cured, or a thermosetting or inspecting developing sheet. s of the unit _ ', for example, a styrene-butadiene-based copolymer having a carboxyl group and a styrene-butadiene-based copolymer having a carboxyl group in the sub-group; The acidity equivalent of the elastomer, the degree of crosslinking, or the degree of gelation, etc. In addition, it is also easy to form a carboxyl group in the resin skin which is dissolved by the liquid in the film removal step, and the carboxyl group in the aqueous solution is swollen in the aqueous solution, and has a tree. The skin, from the side of the 2nd absolute ride F23 surface lion. Further, the molecular weight of the polymer of the acid #1 carboxyl group. Specific examples of the monomer unit having a silk, such as (meth)acrylic acid, cinnamic acid, crotonic acid, itaconic acid, and maleic anhydride. The content of the Wei group in the filamentized elastomer is from 1 〇〇 to 2 _, more preferably from 100 〜. When the acid equivalent is too small ("too many"), the compatibility with the solvent or other composition is lowered, and the resistance of the conductively plated ruthenium treatment liquid tends to decrease. In addition, when the acid is used as the amount of the base When there is little time, 'the hybrid water-soluble lion will have ^. In addition, the molecular weight of the elastomer should be 10,000 ~ qing Wan, more preferably 20,000 ^ 50 to 10,000, 71 201146113 ^ child is 20,000 ~ 60,000. When the molecular weight of the body is too large, the peeling property will be too small, and the viscosity will decrease when it is too small. To maintain the uniform thickness of the resin film, the resistance of the pretreatment liquid for electroplating will also deteriorate. In the process, ', in addition, DFR Acrylic resin containing a predetermined amount of carboxyl groups, hydrazine, ΐΐΪ ί, phenolic resin, ethyl phthalate ate, etc. as a 'resin to OT2R 〇 5 as ff _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The sheet obtained by the surface hardening disclosed in the Japanese Patent Publication No. JP-A-212262, or the DFR of the commercially available test, for example, a series manufactured by Asahi Kasei Co., Ltd., etc. , for example: containing a carboxyl group and using rosin 1 Resin (for example, Nazd, manufactured by Yoshikawa Chemical Co., Ltd., a resin containing phenol as a main component (for example, "104F" manufactured by LEKTRACHEM Co., Ltd.)) Resin film F24, which is coated by a conventional spin coating method or a stick Cloth method = fat = float or emulsion applied to the surface of the second insulating layer F23. A tool such as a vacuum laminator will be formed on the surface of the & layer F23 on the support substrate. Fully hardened, it can be easily shaped, and the thickness of the other '] should be, for example, below 10, more preferably at 5μΓη = corpse pattern F25 in laser processing or machining to form the right ί ΪΓ Ϊ grease film F24 should be used, for example, in the case of an equivalent amount of acid in the 100~_ left-turned C-side egg. In addition to the above, the resin film F23 should also have the following characteristics, and also the surface. 72 201146113 Outline; (3) High; 'There will be a detailed description, but in the case of the attached drug solution', although the text is acidic (pH 1~3) water, the liquid is in the case of ice 11/catalytic system, 'all ΐϋΐ pH^f PH ^ ^ When immersed in the liquid, the photoresist does not live. It means that when the photoresist is formed into a film, in general, Ι ί , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Second, the treatment by the film removal step is 'not limited to this. In order to melt or spray the manufacturing steps or reduce the material loss, etc., for the sake of simplicity, the bending property of the film is still necessary. ^^ And in order to ensure easy handling or time is random. If it is, it will be a ^~boot in the fit of 4, and it will be a three-layer structure that works repeatedly, but it is not the same. Membrane clips are the best, but they must also be stored at room temperature. The composition of the dry film will not separate, f_ will not drop & = deposit. From the above point of view, the resin has at least one type of monomer polymerized with at least one of the polymerized monuments and the fine surface H. The soap body on the seed and the (9) can be opened in the 7-28U37 bulletin, 曰本^ know the technology 'for example: 曰本特本特开2_—such as carrying, Japanese special toilet 73 201146113 201851荨. Regarding (a) monomer 'for example: (meth)acrylic acid, fumaric acid, cinnamic acid, crotonic acid, itaconic acid, maleic anhydride, maleic acid half ester, butyl acrylate, etc., can be used alone' Two or more types are used in combination. Regarding the (b) monomer, for example, it is not acidic and has (a) polymerizable unsaturated group in the molecule, but is not limited thereto. It is possible to maintain various resistances in the plating step, flexibility of the cured film, and the like. Specifically, 'methyl acetoacetate vinegar, methacrylic acid vinegar:: acrylic acid ugly, methyl (10) acid positive ester, methacrylic acid second butyl vinegar, methyl vinegar, methacrylic acid 2 Methyl acrylate 2 side: erythritol, methacrylonitrile, styrene styrene derivative, etc., such as erythritol and vinyl acetate vinegar. Further, it can be obtained by using one of the above polymerization or acid polymerization in the molecule. Further, a monomer having a plurality of unsaturated groups is selected from a single f which is aggregated by 1 in a three-dimensional crosslink. In addition, when the reactive functional group guide towel such as S amine group, amine group or ethyl group contains the county, the acid equivalent of the amount of sulfhydryl group contained in the resin is more suitable for the lion. When the acid equivalent is too low When the main resin is suitable to have the 孰 plasticity temporary station ancient μ; picking this & species = characteristics can also be grafted to make it =, _: 5 〇 _, about _ ~ ί, if ^ 曲Or electric_adhesive liquid resistance (acid resistance) will be reduced by two large liquids r: ^^ system, can also be introduced into the cross-linking point. Prevent thermal deformation during laser processing or flow control plasticizer as a brewing (4); 74 201146113 言=如: methyl methacrylate, ethyl methacrylate, methyl propyl hydrazine :: butyl vinegar, methacrylic acid second vinegar, methyl propylene and ethyl acetate Vinyl alcohol _ class mu and base thief or acid _ polymerization can also be obtained. Then 'multiple official mouth = two = single, can also contain other two or more single ^ ^ monobasic acid ester, or polypropylene glycol Methyl acrylate, polyethylene glycol propane = arr-poly 3: ^ / propylene s_ poly succinyl methyl di, di neopentaerythritol penta methacrylate, tris (tetra) ene 5 甲其 trace ί The basic base of the Wuyi Warfare) is a kind of polyacrylic acid which contains an amino phthalic acid vinegar. The filler of the above monomer or the monomer which reacts the monomer is not particularly limited. Specifically, the example _ = equal = = thick cracked, and the shaft 'coarse grain is cut, but it can also be used as a dispersing agent, a photopolymerizable resin (photopolymerization initiator), a polymerization preventive substance or In the circuit pattern forming step of the pigment), the thermal polymerization initiator, and the epoxy group, the resin rib 3 is required to utilize the laser force of the photoresist because of the lightning relationship.

二等:5S 、有各種固有波長,使用對該波長的吸收率較高的材料, 75 201146113 其中⑽―YAG雷射適合用於細微加工,雷射波 膜似的材料)對該等波長的w 皮 ,可“二當缺 ίΐη限’也有選用w吸收率相對較低之光阻材料會比ϋ ϊ ϋ吸收率越低,W光越能夠通過光阻F24,便可隼中 =====防以及第1絶緣層進行加工^ θ曰m難 之材料時,能夠獲得特別好的結果。如 =,且對應光阻F24的雷射加工的容易度 射加工的容易度及制鱗,設定光崎料。的田 <電路圖案形成步驟> ☆'且ίΐ t圖MF戶斤示的,在樹脂皮膜F24的表面(外表面)上形 値(町^1緣層打3的厚度的合計 ί 成電路_5(電路圖案形成步驟)。電路圖請 F25 1、番诚士 1削加工或壓型加工等方式形成。另外’電路圖案 F25的ptf ^要是當作配線㈣(參照® 13)用的溝槽,電路圖宰 ^ 是例域鋪墊部㈣(參關_關孔。另外ί 奶亦可包含層間連接用孔(與已在金屬柱 計厚度之電路圖案F25的情況下,如圖_所示的, if卜到紅絶緣層F20而是在第1絶緣層F20的外表面(表 的電路醉^圖案F25的狀態。另—方面,在形成超過合計厚度 奮的情況下’如第3—2實施態樣的圖15F或第3—3 绝的圖16F所示的,會形成挖掘到第1絶緣層F2。而在第1 、、緣a — 20的外表面(表面)埋設電路圖案F25的狀態。 外,^路圖案F25中配線F27a用溝槽的寬度並無特別限定。另 易形1使用雷射加工時’即使線寬在2〇μΠ1卩下的細微溝槽也很容 形成電路圖案F25的方法並無特別限定。具體而言,可使用雷 76 201146113 射加工、切割加工等的切削加工、壓型加工等。為了形成高精度的 細微電路圖案F25,宜使用雷射加工。利用雷射加工,控制雷^的 輸出(能量或功率)’第1絶緣層F20的挖掘深度等便比較容舞調 整。另外,關於壓型加工’宜採用例如奈米印刷領域中使用細微樹 脂的壓型加工。 / 形成該等既定電路圖案F25 ’之後賦予無電解電鍍膜限定出第 2電氣電路F27的形成部位。 另外,第3 — 2實施態樣所示之圖15F,係表示在該電路圖案 形成步驟以先前在金屬柱形成步驟所形成之金屬柱F22的頂部^ ,,圖案F25的底面露出且突出的方式形成電路圖案F25的情況。 這是因為’如後所述的,在利用雷射加工挖掘第1絶緣層F2〇時, 構成第1絶緣層F20的樹脂等很容易除去,惟構成金屬柱F22的電 鍍金屬卻很難除去的關係。 <觸媒披覆步驟> 接著,如圖14G所示的,在樹脂皮膜F24的表面上以及電路 圖案F25的表面上坡覆電鍍觸媒F26(觸媒彼覆步驟)。亦即,在形 成電路圖t F25蝴脂皮膜F24 u及絶緣層F3G的表面上以及未形 成電路圖t F25峨脂皮膜F24 a及絶緣層謂的表面上全部都彼 覆電鑛觸媒F26。另外’從後述之無電解電錢的觀點來看,並無必 ,特別在金屬4主F22的表面上披覆電麵媒F26,然而在整個樹脂 皮膜F24以及絶緣層F3〇上都披覆電鍍觸媒F26可簡化作業。 此’電鑛觸媒F26概念上包含其前驅物。 八 ㈣ί鋪媒—係為了錢述魏步射_成無電解電鏟膜 、。刀上形成§亥電鑛膜而預先賦予的觸媒。電鑛觸媒可使用習 =無電解電鍍賴媒,其他並無_限定。另外,亦可預先披覆 又觸j F26的前驅物’在樹脂皮膜F24的除去後使電鑛觸媒ρ26 =。關於電賴媒F26的具體例,例如:除了金屬叙㈣、白金 ' ^(Ag)等金屬之外’還包含可生成鱗金屬的前驅物。 披覆電鑛觀刚的方法,例如:用可在PH值1〜3的 W生條件下進行Sn雜雜進行處奴後,再用 77 201146113 酉夂〆谷仃處理的方法。更具體而言例如以下的方法。 的表面圖案F25的樹脂皮臈F24以及絶緣層F30 進行既定的時卩 界的^液(清潔劑、調和劑)中 itri ° °·10^ 子吸附在;^等為主要成分的預浸液巾進行使氣化物離 i iitnF24以及絶緣層F3°之表面上的預浸處理。之 取狀物氣化亞錫與氣化叙且pH值1〜3的酸性Pd—Sn 酸性觸媒金屬膠狀溶液以凝集並吸附Pd以及Sn。铁 ίη ΓΐΓ的氣化亞錫與氯她之間產生氧化還原反應(崎二 2— nCLj+Pd!;)。藉此’析出電鏟觸媒Fa亦即金屬鈀。Second-class: 5S, with various intrinsic wavelengths, using materials with high absorption rate for this wavelength, 75 201146113 where (10)-YAG laser is suitable for fine processing, laser-like material) for these wavelengths Leather, can be "two when the lack of ΐ η limit" also has a relatively low absorption rate of the photoresist material will be lower than the ϋ ϊ ϋ ϋ absorption rate is lower, the W light can pass through the photoresist F24, can be 隼 ===== When the first insulating layer is processed, it is possible to obtain particularly good results. For example, = and the ease of laser processing for the laser processing of the photoresist F24 is easy and the scale is set. In the surface of the resin film F24 (outer surface), the thickness of the surface of the resin film F24 is 値Into the circuit _5 (circuit pattern forming step). The circuit diagram is formed by F25 1, Fan Cheng 1 cutting or profiling, etc. In addition, the ptf ^ of the circuit pattern F25 is used as the wiring (4) (refer to ® 13). Trench, circuit diagram slaughter ^ is the example of the padding section (four) (see the _ off hole. In addition, milk can also contain interlayers With the hole (in the case of the circuit pattern F25 which has been measured in the thickness of the metal column, as shown in FIG. _, if to the red insulating layer F20 but on the outer surface of the first insulating layer F20 (the circuit of the table is drunk) The state of F25. On the other hand, in the case where the formation exceeds the total thickness, the first insulation layer is formed as shown in Fig. 15F of the third embodiment or Fig. 16F of the third embodiment. F2. The state in which the circuit pattern F25 is buried on the outer surface (surface) of the first and the edge a-20. The width of the groove for the wiring F27a in the circuit pattern F25 is not particularly limited. In the case of the processing, the method of forming the circuit pattern F25 even in the fine groove having a line width of 2 〇μΠ1 并无 is not particularly limited. Specifically, it is possible to use a cutting process such as a shot machining or a cutting process by Ray 76 201146113. In order to form a high-precision fine circuit pattern F25, it is preferable to use a laser processing. The laser processing is used to control the output (energy or power) of the lightning element, and the depth of the first insulating layer F20 is compared. Adjustment. In addition, regarding the press type processing, it is preferable to use, for example, a nanoprint. In the brush field, a molding process using a fine resin is used. / After forming the predetermined circuit pattern F25', the electroless plating film is provided to define a portion where the second electric circuit F27 is formed. Further, the pattern shown in the third embodiment is shown. 15F indicates a case where the circuit pattern forming step forms the circuit pattern F25 in such a manner that the bottom surface of the pattern F25 is exposed and protruded at the top of the metal pillar F22 previously formed in the metal pillar forming step. When the first insulating layer F2 is excavated by laser processing, the resin or the like constituting the first insulating layer F20 is easily removed, but the plating metal constituting the metal post F22 is difficult to remove. <catalyst coating step> Next, as shown in Fig. 14G, the plating catalyst F26 is plated on the surface of the resin film F24 and on the surface of the circuit pattern F25 (catalyst coating step). That is, on the surface of the circuit pattern t F25 resin film F24 u and the insulating layer F3G, and on the surface of the circuit pattern t F25 smear film F24 a and the insulating layer, all of the electric ore catalyst F26 is coated. In addition, from the viewpoint of electroless electricity, which will be described later, it is not necessary to cover the surface of the metal main F22, but the entire surface of the resin film F24 and the insulating layer F3. Catalyst F26 simplifies the job. This 'electro-mineral catalyst F26 conceptually contains its precursors. Eight (four) ί shop media - for the money to say Wei step shot _ into the electroless electric shovel film. The catalyst is pre-applied to the §Hai electric film on the knives. Electro-mineral catalyst can be used Xi = electroless plating, other than _ limited. Further, the precursor of the j F26 may be preliminarily coated and the electric metal catalyst ρ26 = may be removed after the removal of the resin film F24. Specific examples of the electric charge medium F26 include, for example, a metal which can form a scale metal in addition to metals such as metal (4) and platinum '^(Ag). The method of coating the electric ore mine, for example, using the method of treating the Sn miscellaneous at a pH of 1 to 3, and then using the method of 77 201146113 Shibuya. More specifically, for example, the following method. The resin skin 臈F24 and the insulating layer F30 of the surface pattern F25 are subjected to a predetermined time 的 液 (cleaning agent, blending agent), itri ° ° · 10 ^ sub-adsorption; ^ etc. as the main component of the pre-dip liquid towel A prepreg treatment is performed on the surface of the vaporization of the i iitn F24 and the insulating layer F3. The mixture is vaporized with stannous and an acidic Pd-Sn acidic catalyst metal colloidal solution having a pH of 1 to 3 to agglomerate and adsorb Pd and Sn. Iron ίη ΓΐΓ gasification of stannous and chlorine to produce a redox reaction between her (Saki 2 - nCLj + Pd!;). Thereby, the electric shovel catalyst Fa, that is, metal palladium, is precipitated.

Sn勝/觸^於^觸媒金屬膠狀溶液,可使用習知的酸性Pd— 的雷可獅料的使賊賴齡屬膠狀溶液 有限么41系==序’例如:^義S電子材料股份 F24 覆處理’便可如圖14G所示的,在樹脂皮膜 、 〖及電路圖案F25的表面上披覆電鏟觸媒F26。 <皮膜除去步驟> ㈣圖14H所不的’從絶緣層F30(更具體而言為第2絶 f層FM)除去樹脂皮膜pa(皮臈除去步驟)。亦即,當樹脂皮膜似 ,為可溶型樹脂時,使用有機溶劑或鹼性溶液將樹脂皮膜F24溶解, =絶緣層F3G的表面除去。另外,當樹脂皮膜似為膨潤性樹脂時, ^既歧體使樹脂皮膜F24膨潤,再將其從絶緣層刚的表面剝 離除去。 利用該皮膜除去步驟,便可在絶緣層㈣的電關案防形成 ^的表面上殘留電鑛· F26。另一方面,賴在樹脂皮膜似 的表面上的電錢觸媒F26 ’會與樹脂皮膜F24 —起從絶緣層刚被 除去。在此’從防止從絶緣層F3〇除去之電鑛觸媒F26飛散而再次 披覆於絶緣層F3〇的表面上的觀點來看,樹脂皮膜Fa從絶緣層 78 201146113 F30除去時不四分五裂地崩壞而保持連續整個除去會比較好。 關於使樹脂皮膜F24溶解或膨潤的液體,只要是不會使電路基 板F10、絶緣層F30以及電鍵觸媒F26實質分解或溶解,而可使樹 脂皮膜F24溶解或膨潤到容易從絶緣層F3〇溶解除去或剝離除去之 程度的液浙可,其他並無侧限定。該稍脂皮麟去用液體, 可根據樹脂皮膜F24的種類或厚度等選擇較適當者。具體而言,例 如,在使用光硬化性環氧樹脂作為光阻樹脂的情況下,可使用有 溶劑巧鹼性水溶液的光阻除去劑等。另外,例如,當樹脂皮膜F24 由二烯轉性體、丙烯I㈣性體以及聚緖性體轉性體所形 成時’或者’當樹脂皮膜F24是將⑻在分子中具有至少i個聚合性 不飽和基馳酸或酸_至少丨種以上的單體以及⑼可盘⑻單體 ,合的至少1 _上的賴聚合所得到㈣合物樹脂,或含有 合„的樹脂組成物時,或是由前述含梭基的丙烯酸系樹脂所 ,成時’宜使用例如濃度卜職左摘氫氧化納水溶液等的驗性 水溶液。 另外’當在觸媒披覆步驟中使用以上述酸性條件進行處 ,程序時’樹脂皮膜F24宜由在酸性條件下膨潤度在6()%以下 f 40%以下,在驗性條件下膨潤度在鄕以上_如二稀 脸、丙稀酸系雜體以及聚I铸性體等的雜體卿成,或是由 絲a在刀子巾具有至少1個聚合性不飽和基的酸或酸酐的至少1 ^以上的單體以及(b)可與該⑼單體聚合的至少丨種以上的單 i所合物細旨或含有騎合物觸_敝成物所形 利用艺3 =述,緩基的丙稀酸系樹脂所形成。該等樹脂皮膜, 1 irfo 〜4 ’較佳為pH值12〜14的驗性水溶液,例如濃产 解〜=^1 的Λ氧化納水溶液f,便容紐溶解或膨潤,而被i 時用超音波照射。另外,亦可因應需_輕用力將其剝t 貝 的罐樹月曰_5膜F24的方法,例如:將被樹脂皮膜F24披覆 ίH f私在概細除去驗财經過蚊時間的Ϊ法 專。另外,為了提高剝離除去性或溶解除去性,特別宜在浸潰時^ 79 201146113 另外,當很難剝離除去或溶解除去時,可因應需要輕 <電鍍步驟> 接著,如圖141所示的,對絶緣層F3〇實施無 ,電鍍觸媒F2⑽電路圖案F2 5的部分上以及金义、主F22的露出部 t上形成無電解電麵以在該絶緣層F3G(亦即第1絶緣層F20以及 =色,^層F23)上形成第2電氣電路F27。並且,使該絶緣層F30 ,第電路F27與電路基板F10的第!電路m透過該金屬柱ρ22 在層間連接(電鑛步驟)。利用該等無電解電鑛處理,便可在 路圖案F25的部分上析出精度良好的無電解電錢膜。 處理^方法,可使_如將部分披财電鍍觸媒 H絶緣層F30&潰在無電解電鑛液中,以在彼覆有電鍍觸媒ρ26 的部分上析出無電解電鍍膜的方法。 '用於無電解電鑛的金屬,例如:銅(Cu)、鎳㈣、録(c。)、 鋁(A1)荨。其中,以Cu為主成分的電鍍由於導電性優異,是較佳 的選擇。另外’當含有Ni時’耐|虫性或與焊料的密合性優異 較佳的選擇。 炎开疋 無電解電鍍膜的膜厚並無特別限定。具體而言,例如:〇 1〜 ΙΟμηι ’更宜為1〜5pm左右。 . 利用電鐘步驟,在絶緣層F3G表面殘留有紐觸媒F26 上析出無電解電鍍膜。如是,便可只在欲形成第2電路F27的 上形成精度良好的導電層。另—方面,亦可防止在未形成電路圖案 F25的部分上析出無電解電舰。因此,即使在狹窄的節距間隔妒 成複數條線寬狹小的細微配線F27a,也不會在隣接配線打乃之^ 殘留多餘的電鍍膜。因此,能夠防止短路或遷移等問題的發生。 利用該等電鍍步驟,便可在絶緣層F3G的表面的經過雷射加工 麵。藉此,在絶緣層F30的表面上形成新 的第2電路F27,同時該絶緣層的第2電路F27與電路 =〇的第1電路F11透過層間連接用孔F21或金屬柱防、在層 201146113 經過或重複該等步驟,便可如圖13所示的,製造出在絶緣層 • F30的表面上具有第2電路F27的多層電路基板π。然後,在該^ .層電路基板FI t,在各層中電氣電路F1卜F27與層間連接用孔 F21相互連接,同時各層的電氣電路FU、F27之間透過層間遠接 用孔F21在層間連接。 史伐 若利用本實施態樣所説明之製造方法,藉由調整相對於絶緣層 F30的電路圖案F25的深度,便可自由調整第2電路F27的膜厚^ 深,。=如二可將第2電路F27形成在絶緣層剛的較深的部分", 或疋使複數弟2電路F27形成在彼此深度不同的位置上。另外,在 絶緣層F30的較深的部分形成第2電路F27,便可形成厚度較厚的 電路F27。膜厚較厚的電路剖面積較大,故具有較高的強度與電容 4 ° 在本貫施態樣的製造方法中,由於利用形成電路圖案F25之前 的第1絶緣層形成步驟、開孔形成步驟與金屬柱形成步驟,預先用 電鍍金屬填充層間連接用孔F21,故無須在意第2電路F27是否形 成夕餘導體,而能夠花時間充分進行層間連接用孔F21的金屬填 充。另外,在進行層間連接用孔F21的金屬填充時,由於電路圖案 F25尚未形成,故電鍍膜不會從電路圖案側成長出來,可防止孔隙 的叙生,使金屬填充情況良好。然後,由於在層間連接用孔的 金屬填充完成之後,利用第2絶緣層形成步驟、皮膜形成步驟、電 路圖案形成?驟、觸披覆步驟、皮膜除姆驟以及賴步驟,以 加成法形成第2電路F27的導體,故能夠在短時間内形成精度良好 的細,導體,進而防止在第2電路F27上形成多餘的導體。根據以 ^内谷\即使細微電路圖案F25與層間連接用孔F21混合存在,也 能夠適當,用加成法,利用增層法順利製造出多層電路基板F1。 在本貫施態樣的製造方法中,於第丨絶緣層F2〇的外表面上形 成第2絶緣層F23,於第2絶緣層F23的外表面上形成樹脂皮膜 • F24,在形成具備至少樹脂皮膜F24的厚度與第2絶緣層的厚 度的合計値以上的深度的電路圖案F25之後,將樹脂皮膜F24除 去,故在電路圖案F25的部位上第2絶緣層F23必定被加工除去。 201146113 因此’電路圖案F25的底面位於挖掘到比第2絶緣層F23的外表面 更下方的位置,構成第2電路F27的導體層形成一部或全部埋設於 第2絶緣層F23的外表面的狀態。結果,便可增加導體層的厚度, 並確保第2電路F27的機械強度。另外,可消除或減少導體層從第 2絶緣層F23突出之量,保護第2電路F27,防止第2電路F27從 絶緣層F30脱落,消除或減少在電路形成面上所產生之凹凸。 在本實施態樣的製造方法中,於金屬柱形成步驟,利用盔電解 電錢在露出之第1電氣電路F11上使電賴成長,以在層間;^接用 孔F21填充電鍍金屬。由於導體亦即電氣電路π 解電鍍的電鍍核,故能夠合理形成金屬柱F2h 為無電 另外,在本實施態樣的製造方法中’於金屬柱形成步驟,在s 1 ^緣層F20的表面、層間連接用孔F21的内壁面以及露出之第 =電路F11的表面上彼覆電鍍觸媒F25,在對電鍵觸媒彼覆部 之後,再實施電解麵,藉此用紐金屬填充層_ 接用孔F2卜之後,除去在包含第!絶緣層F2〇的表面在 iff/20—的外表面側析出的電錢金屬。由於在包含第1絶緣為 被利用當,所必須之給電層,故可合理形成金 肩 在本實施祕的製造方法中,樹脂皮膜F24宜為可被 溶解或膨麻從第2絶緣層F23(魏緣層 广 去的樹脂皮膜。使_樹脂皮膜F24,便可 ^層F23的表面將樹脂皮膜似溶解除去或剝離除^ 樹3崩壞的心披覆在該樹脂皮膜砂 ,電賴媒26 _飛政’飛散之電鍵觸媒聊再次 绝缘形成多餘的電錢膜。由於能夠輕易而順利地ί 脂皮膜F24除去,故可防止該等問題。 *F2; 'F27 ^ 从好’且此夠防止電路F27部分形成多餘的導 82 201146113 製得不易產生短路等問題的多層電路基板n。因此,能 多ϋ用加成法’利用增層法順利製造出多層電路基板F卜結 果便可製巧成有形狀精度报高之電氣電路Μ的多層電路基板 F1。使用$衫層電路基板F1的製造方法,便能触造出可用於 配f F27a的寬度以及配線F27a _隔很狹小的IC基板、行動電 活用P刷配線板、立體電路基板等用途的多層電路基板π。 另外,在多層電路基板的製造方法中,使樹脂皮膜刚含有榮 ’便可在上述細除去步驟之後,對檢査對象面照射紫外 ΐϋΐ光’利用螢光性物質的發光檢查皮膜是否徹底除去。在 ^實施L樣的多料路基板的製造方法中,可形成配線F27a的線 寬以及配線F27a的間隔非常細小的金屬配線㈣。在此情況下, 可能會有例如在互_接的金屬配線F27a之間_脂皮膜F24益 去的問題。當金屬配線咖之間殘留樹脂皮 巧4夺’曰在tp刀上形成電鍍膜,導致遷移或短路等問題。此 月旨細F24含有螢光性物質,便可在皮膜除去步驟之後, ,皮膜除去=照射既定發光源,使皮膜F24殘留部分因為螢光性物 ^而發光,祕檢查巾皮膜是碰絲去或賴未職除去 置0 本檢査步驟使用之樹脂皮膜F24所含有的螢光性物質,口要 定光源照财舰《緋_可,其倾無制^二^ 如:Fluoresceine、Eosine、Pyronine G 等。 八 利用本檢査步驟檢測出螢光性物質的發光的部分 脂皮膜F24的部分。因此,除去檢測出發光的部分,便可 =形成於該部分上。藉此,便可防止遷移或短路糾題的發生= 〔第3—2實施態樣〕 參照圖15説明本發明的第3-2實施態樣。另外, 同Λ相當的構成要件使用相同符號,省略其説明,增加 第3—2貫鈿恶樣之特徵部分的説明。 該第3-2實施態樣,如0 15F所示的,在電路圖案形成步驟 83 201146113 外i面開始形成超過樹脂皮膜F24的厚度鱼 第2、.、色緣層F23的尽度的合計値的電路圖案防。藉此 二 案F25的部分,除了樹脂皮膜F24錢第2絶緣層肪被除去之 更挖掘到第1絶緣層F20 ’使電路圖案F25的底面位 绝 fjrr面位置。'然後,該第3:2實:S 1SF所不的’在電路圖案形成步驟中,從電路圖案防 圖 ,圖卻的金屬柱形成步驟所形成之金屬柱F22的二二面二始* ^形成電路職F25。這是因為’當利时射加工挖掘到第丨_ ΐΙΐΓ構成第1絶緣層F20的樹脂等很容易被除去,但構ί全 屬柱F22的電鍍金屬很難被除去所造成的。 冓成金 ,本實施祕的製造方法中,在電路_形成步驟,宜 F25 路圖案的底面突出的方式形成電路圖ί F25並將覆盍該金屬柱F22之頂部的第2電氣_F27的部^ 照乍電極用塾部啊參照圖13)。金屬柱F22的頂部會4 入塾4 7b的導體層’糊錯定效果有效防止 ^ 脱進而製得㈣充分承受絲零狀重f的墊部層 〔第3 — 3實施態樣〕 —參照圖16説明本發明的第3—3實施態樣。另外, =目^構成要件使__號,其㈣省略 弟3 — 3貫%態樣的特徵部分的説明。 今;樣’如圖160所示的,在金屬柱形成步驟中, ίΪΪ 未成長到第1絶緣層刚的外表面的高度。相反的, 金屬柱F22的電鍍膜成長到電路圖案防 84 1 曰6F= 二金,22並未成長到第1絶緣層的ί表面:Ξ 度就停止。藉此’便比較容易達到在電路圖 ί tilts屬柱形成步驟的階段金屬柱F22的頂部不會 突出之目的。然後,如圖i6F所示的,在電Sn wins / touches ^ ^ Catalyst metal colloidal solution, can use the traditional acidic Pd - Lei Keshi material to make the thief Lai Ling is a gelatinous solution limited 41 series = = order 'for example: ^ Yi S Electronics The material stock F24 treatment "can be covered with the electric shovel F26 on the surface of the resin film, and the circuit pattern F25 as shown in Fig. 14G. <Thick film removing step> (4) The resin film pa (the skin removing step) is removed from the insulating layer F30 (more specifically, the second insulating layer F). That is, when the resin film is a soluble resin, the resin film F24 is dissolved using an organic solvent or an alkaline solution, and the surface of the insulating layer F3G is removed. Further, when the resin film is a swellable resin, the resin film F24 is swollen by the dissimilar body, and then peeled off from the surface of the insulating layer. By the film removing step, the electric ore F26 can be left on the surface of the insulating layer (4). On the other hand, the electric money catalyst F26' on the surface of the resin film is newly removed from the insulating layer together with the resin film F24. Here, from the viewpoint of preventing the electric ore catalyst F26 removed from the insulating layer F3 from scattering and re-coating on the surface of the insulating layer F3, the resin film Fa is removed from the insulating layer 78 201146113 F30 without being torn apart. It is better to keep the whole and remove continuously. The liquid which dissolves or swells the resin film F24 does not substantially dissolve or dissolve the circuit board F10, the insulating layer F30, and the electric contact catalyst F26, and the resin film F24 can be dissolved or swollen to be easily dissolved from the insulating layer F3. The degree of removal or stripping of the liquid can be removed, and the others are not limited. The liquid is used as the liquid, and it is possible to select a suitable one according to the type or thickness of the resin film F24. Specifically, for example, when a photocurable epoxy resin is used as the photoresist resin, a photoresist removing agent having a solvent-based alkaline aqueous solution or the like can be used. Further, for example, when the resin film F24 is formed of a diene-transformed body, a propylene I(tetra)-form, and a poly-transformed body, or when the resin film F24 has (8) at least i polymerizable in the molecule, a saturated carboxylic acid or an acid _ at least one of the above monomers and (9) a platable (8) monomer, at least one of which is obtained by a lysine polymerization, or a resin composition containing the hydrazine, or In the case of the above-mentioned acidic conditions, it is preferable to use an aqueous solution such as a concentration of the aqueous solution of the aqueous solution of the aqueous solution of the sodium hydroxide. When the procedure is used, the resin film F24 should have a swelling degree under acidic conditions of 6 (%) or less and 40% or less. Under the test conditions, the degree of swelling is above 鄕. For example, the two-faced, acrylic-based and poly-I a compound of a cast body or the like, or a monomer having at least 1 ^ or more of an acid or an acid anhydride having at least one polymerizable unsaturated group in the blade, and (b) polymerizable with the monomer (9) At least the above-mentioned single-components or the inclusion of the compound The shape is formed by the art 3 = a slow-base acrylic resin. The resin film, 1 irfo 4 4 is preferably an aqueous solution having a pH of 12 to 14, such as a concentrated solution~=^1 The aqueous solution of cerium oxide is used to dissolve or swell, and it is irradiated with ultrasonic waves when it is used. In addition, it can be peeled off by the method of _5 film F24, for example, : It will be covered by the resin film F24 ίH f. In addition, in order to improve peeling removal or dissolution removal, it is especially suitable when it is impregnated. ^ 79 201146113 In addition, when When it is difficult to remove or dissolve and remove, it may be lighter than necessary. [Electroplating step] Next, as shown in FIG. 141, the insulating layer F3 is not provided, and the portion of the plating catalyst F2 (10) circuit pattern F2 5 and gold, An electroless surface is formed on the exposed portion t of the main F22 to form a second electric circuit F27 on the insulating layer F3G (that is, the first insulating layer F20 and the color layer F23). Further, the insulating layer F30 is formed. The first circuit F27 and the first circuit m of the circuit substrate F10 are connected to each other through the metal pillar ρ22 (electrical ore) By using the electroless electrowinning treatment, an electroless electro-money film with good precision can be deposited on the portion of the road pattern F25. The processing method can be used to make a part of the coating material H insulating layer F30 & a method of depositing an electroless plating film on a portion of the electroless electrolytic ore that is coated with the plating catalyst ρ26. 'Metal for electroless ore, such as copper (Cu), nickel (four), (c.) and aluminum (A1) 荨. Among them, electroplating with Cu as a main component is preferable because it has excellent conductivity, and 'resistance to insects or adhesion to solder when Ni is contained. Excellent and preferable selection The film thickness of the non-electrolytic plating film of the Yankai 并无 is not particularly limited. Specifically, for example, 〇 1 to ΙΟμηι ’ is preferably about 1 to 5 pm. Using the electric clock step, an electroless plating film is deposited on the surface of the insulating layer F3G with a neocatalyst F26. If so, a highly precise conductive layer can be formed only on the second circuit F27 to be formed. On the other hand, it is also possible to prevent the electroless electric ship from being deposited on the portion where the circuit pattern F25 is not formed. Therefore, even if the fine wiring F27a having a narrow line width is formed at a narrow pitch interval, the excess plating film is not left in the adjacent wiring. Therefore, it is possible to prevent problems such as short circuit or migration. With these plating steps, the laser processed surface on the surface of the insulating layer F3G can be used. Thereby, a new second circuit F27 is formed on the surface of the insulating layer F30, and the second circuit F27 of the insulating layer and the first circuit F11 of the circuit = 透过 are transmitted through the interlayer connection hole F21 or the metal pillar, and the layer 201146113 By repeating or repeating these steps, as shown in Fig. 13, a multilayer circuit substrate π having the second circuit F27 on the surface of the insulating layer F30 can be manufactured. Then, in the layer circuit board FI t, the electric circuits F1 and F27 and the interlayer connection hole F21 are connected to each other in each layer, and the electric circuits FU and F27 of the respective layers are connected to each other through the interlayer distance holes F21. According to the manufacturing method described in the embodiment, the film thickness of the second circuit F27 can be freely adjusted by adjusting the depth of the circuit pattern F25 with respect to the insulating layer F30. = Second, the second circuit F27 can be formed in a deeper portion of the insulating layer, or the plurality of circuits 2, F27 can be formed at positions different in depth from each other. Further, by forming the second circuit F27 in a deep portion of the insulating layer F30, a thick circuit F27 can be formed. The thick film has a large cross-sectional area, so it has a high strength and a capacitance of 4 °. In the manufacturing method of the present embodiment, the first insulating layer forming step and the opening are formed by the formation of the circuit pattern F25. In the step of forming the metal column, the interlayer connection hole F21 is filled with the plating metal in advance, so that it is not necessary to care whether or not the second circuit F27 forms the outer conductor, and it is possible to take time to sufficiently fill the metal for the interlayer connection hole F21. Further, when the metal for the interlayer connection hole F21 is filled, since the circuit pattern F25 is not formed, the plating film does not grow from the circuit pattern side, and the occurrence of voids can be prevented, and the metal filling can be improved. Then, after the metal filling of the interlayer connection holes is completed, the second insulating layer forming step, the film forming step, the circuit pattern forming step, the touch coating step, the film removing step, and the Laying step are formed by an additive method. Since the conductor of the second circuit F27 can form a fine conductor with high precision in a short time, it is possible to prevent an unnecessary conductor from being formed on the second circuit F27. According to the inner valley, even if the fine circuit pattern F25 is mixed with the interlayer connection hole F21, the multilayer circuit substrate F1 can be smoothly manufactured by the additive method by the additive method. In the manufacturing method of the present aspect, the second insulating layer F23 is formed on the outer surface of the second insulating layer F2, and the resin film F24 is formed on the outer surface of the second insulating layer F23, and at least resin is formed in the formation. After the circuit pattern F25 having a depth equal to or greater than the thickness of the second insulating layer and the thickness of the second insulating layer is removed, the resin film F24 is removed. Therefore, the second insulating layer F23 is necessarily processed and removed at the portion of the circuit pattern F25. 201146113 Therefore, the bottom surface of the circuit pattern F25 is located below the outer surface of the second insulating layer F23, and the conductor layer constituting the second circuit F27 is partially or entirely embedded in the outer surface of the second insulating layer F23. . As a result, the thickness of the conductor layer can be increased, and the mechanical strength of the second circuit F27 can be ensured. Further, the amount of the conductor layer protruding from the second insulating layer F23 can be eliminated or reduced, the second circuit F27 can be protected, and the second circuit F27 can be prevented from falling off from the insulating layer F30, and the unevenness generated on the circuit forming surface can be eliminated or reduced. In the manufacturing method of the present embodiment, in the step of forming the metal post, the electric power is increased by the helmet electrolysis money on the exposed first electric circuit F11, and the plating metal is filled in the interlayer; Since the conductor, that is, the electroplating core of the electric circuit π-de-plating, can reasonably form the metal post F2h to be non-electric. In addition, in the manufacturing method of the present embodiment, the step of forming the metal pillar is performed on the surface of the s 1 ^ edge layer F20. The inner wall surface of the interlayer connection hole F21 and the surface of the exposed first circuit F11 are coated with a catalyst F25, and after the electric contact catalyst is applied to the surface, the electrolytic surface is further applied, thereby filling the layer with a new metal. After the hole F2 Bu, remove the inclusion in the first! The surface of the insulating layer F2 is deposited on the outer surface side of the iff/20-. Since the power supply layer is included in the first insulation, the gold shoulder can be formed reasonably. In the manufacturing method of the present embodiment, the resin film F24 is preferably soluble or swellable from the second insulation layer F23 ( The resin film of the Wei edge layer is widened. The resin film F24 can be used to dissolve or remove the resin film on the surface of the layer F23, and the core of the tree 3 is collapsed in the resin film sand. _Fei Zheng's scattered electric key contact media is once again insulated to form an extra money film. Since it can be easily and smoothly removed, the grease film F24 can be removed, so it can prevent these problems. *F2; 'F27 ^ From good' and this is enough Preventing the circuit F27 from forming a redundant guide 82 201146113 A multilayer circuit substrate n which is less prone to short-circuit problems, etc. Therefore, it is possible to use the additive method to smoothly manufacture a multilayer circuit substrate F by the build-up method. The multilayer circuit board F1 having an electric circuit having a high degree of shape accuracy is used. With the manufacturing method of the shirt layer circuit board F1, the IC substrate which can be used for the width of the f F27a and the wiring F27a_the narrow gap can be touched. Action electric live with P brush A multilayer circuit board π for use in a board or a three-dimensional circuit board. Further, in the method of manufacturing a multilayer circuit board, the resin film may be subjected to ultraviolet light after the fine removal step. It is checked whether or not the film is completely removed by the luminescence of the fluorescent substance. In the method of manufacturing the L-like multi-path substrate, the line width of the wiring F27a and the metal wiring (4) having a very small interval between the wirings F27a can be formed. Next, there may be a problem that the fat film F24 is benefited, for example, between the metal wirings F27a of the mutual connection. When the metal wiring ties are left with a resin film, a plating film is formed on the tp knife, resulting in migration or Short-circuit problem, etc. This month, F24 contains a fluorescent substance, which can be removed after the film removal step, and the film is removed to illuminate the predetermined light source, so that the residual portion of the film F24 is illuminated by the fluorescent substance. It is the fluorescent material contained in the resin film F24 used in this inspection step. The mouth must be fixed to the light source. "绯_可, it is not made ^ ^ For example: Fluoresceine, Eosine, Pyronine G, etc. 8. The portion of the lipid film F24 which emits light of the fluorescent substance is detected by this inspection step. Therefore, the portion where the light emission is detected can be formed on the portion. Therefore, it is possible to prevent the occurrence of migration or short-circuit corrections. [Third Embodiment 2-2] The third embodiment of the present invention will be described with reference to Fig. 15. The description of the third to second aspect is added, and the description of the characteristic portion of the third to second aspect is added. The third embodiment of the third embodiment, as shown by 0 15F, begins to form a resin film beyond the outer surface of the circuit pattern forming step 83 201146113. The thickness of the F24 is the second, the sum of the end of the color edge layer F23, and the circuit pattern is prevented. In the second portion F25, the second insulating layer of the resin film F24 is removed, and the first insulating layer F20' is dug out so that the bottom surface of the circuit pattern F25 is at the fjrr plane position. 'Then, the 3:2 real: S 1SF does not' in the circuit pattern forming step, from the circuit pattern prevention map, the metal pillar F22 formed by the metal pillar forming step of the second and second sides of the metal layer F ^ ^ ^ Form the circuit job F25. This is because the resin or the like constituting the first insulating layer F20 is easily removed, but the plating metal of the column F22 is hard to be removed. In the manufacturing method of the present embodiment, in the circuit_forming step, the circuit diagram ί F25 is formed so as to protrude from the bottom surface of the F25 road pattern, and the second electric_F27 portion of the top of the metal column F22 is covered. Refer to Figure 13 for the top of the electrode for the electrode. The top of the metal post F22 will be 4 into the conductor layer of the crucible 4 7b. The paste misalignment effect effectively prevents the strip from being formed (4) the mat layer that sufficiently withstands the filament zero weight f [the third embodiment] - see Fig. 16 The third to third embodiments of the present invention will be described. In addition, the = 目 constituting the element makes the __ number, and (4) omits the description of the characteristic part of the 3%. Now, as shown in Fig. 160, in the metal pillar forming step, ΪΪ does not grow to the height of the outer surface of the first insulating layer. On the contrary, the plating film of the metal post F22 is grown to a circuit pattern of 84 1 曰 6F = two gold, and 22 does not grow to the surface of the first insulating layer: the temperature stops. Therefore, it is relatively easy to achieve the purpose of not protruding the top of the metal post F22 at the stage of the circuit diagram forming step. Then, as shown in Figure i6F, in the electricity

頂部未從電路圖_的底面 驟中’便可防止形成在金屬柱F22的頂部之上的導體層從第H 201146113 面上所ϊΐ卜ί::出因少在絶緣層F3〇的電路肪形成 凹凸也不增加,電路形成面所產生之 成步; 利用例如軟侧騎F2G的表關南度之後’ 的底面的ίΐ ίί ί金屬柱_F22咖部直到電路圖案F25 〔第4實施態樣〕 07 法的多二電,古基板的技術領域,侧於-種使用加成 基層電嘯製造方法以及該製造方法所製造的多層電路 H近為首的攜帶式資訊終端裝置、電腦及其周邊 “於&種置等的電氣裝置,朝高度功能化快速發展。 鱗魏較上娜載之電板㈣,其電氣電 希更㈣度化。為了實現該等電路基板的高密度化,吾人 古正確地形成具備更狹窄之線寬以及制隔的電路的 ^ L同岔度化的配線中,容易發生配線之間的短路或遷移等問 且二* ^ ’在較細寬度的配線巾,配線賴械強度會降低,電路容 :、、'又到衝擊等因素而被七刀斷。再者,堆疊婁欠增力口,在電路形成 上所,生之凹凸就會變大,欲形成細微電路就會變困難。 以往,電絲板的桃卿成方法,已知有減去法或加成法。 ϊ去法’是將欲在金屬羯堆疊板的表面上形成電路的部分以外的金 ^除去(減去)’崎成電路的方法。另—方面,域法,是對絶 、,基材七欲形成電路的部分實施無電解電鍍,以形成電路的方法。 Λ 一般而言,減去法是蝕刻膜厚較厚的金屬箔以在欲形成電路的 =分上殘留金屬f|的方法。若湘這個方法,顺除去部分的金屬 运被浪費掉。另一方面,加成法可只在欲形成金屬配線的部分上形 85 201146113 成無電解電顧,故不會浪費金屬。從此點來看,加成法是較 電路形成方法。 w 習知的代表性加成法之-的全加成法,以如下方式進行 ,、’在絶緣基材的表面上披覆魏_。接著,在電賴媒之 成光層。接著,透過已形成既定電關案的光罩對光阻層的 光i接著,對電路圖案進行顯影。然後,對顯影所形成 t圖ί的表面實施無電解電鍍,以在電關案的部分上形成ί屬ί 線。藉由該等步驟便可在絶緣基材上形成電氣電路。 - 在上述的習知加成法中,會在絶緣基材的整個表面上披 3样因ί ’會產生以下關題。亦即,當以高精度對光阻層ίί ^寺,,便可在光阻未倾刺部分形成當未以言 ί二2阻層進?顯影時’可能會在本來不欲形成電路的部分殘Ξ 的因為在絶緣基_整録面上賴電鑛觸媒所 電鍍膜會導致隣接電路之間的短路或遷移等問題。 路或遷移聰,挪成線寬以及制隔較狹料電路時更容 赛八解ΐ該等問題’吾人考慮應用例如日本特開昭58—18_ 如下,ί。首先,在絶緣基材上塗佈樹脂保護膜。 塗佈該保濩膜之絶緣基材上利用機械力ο工或昭射雷射# ⑦j形成對應電路圖案的溝槽以及穿通孔。接著, 成活性化層。接著,將該樹脂保護膜剝離,只在溝槽 ϊ導糾雜狀賴以及料孔_壁面上形 精度請人已對使無電解電_之驗觸媒以高 解ΐ梦的邱心祕,t^部分或穿通孔的内_等欲進行無電 以及二ί=的&明内容提出專利申請(日本特願2_—118818 夂以其為基礎的曰本特願2〇〇9—104086等)。兹 該專利申請之電路形成方法。 寻)絲參照圖23况明 首先,如圖23Α所示的,在絶緣基材a的表面上塗佈樹脂皮膜 86 201146113 料所抑,在⑭佈麟細b的絶緣基材a上 ☆Π”的溝槽“戈穿通孔d。另外,雖然在圖 挖掘到比美:面二絶緣基材&的表面一致,然而亦可將溝槽c 在溝Α 表面更深的位置。接著,如圖23C所示的, 總磁θ +及穿通孔4的表面上以及樹脂皮膜15的表面上披覆電鑛 n。在此’電鍵觸媒在概念上包含其前驅物 將樹脂皮臈b剝離,以在溝槽以及穿舰 妒成後,如圖2犯所示的,在電鍍觸媒e殘留部分上 面形成 声开’關於高密度化之多層電路基板的製造方法,逐 —邊形成作為層間連接用孔的介層孔一邊進 23Α〜且圖23\曰所1’明已為人所習知。然而,該等增層法,若應用圖 參照圖24 加成法,可能錢生町所綱的問題。兹 Α板斤示的’準備已形成第1電氣電路11的電路 卜1在®24Α中電路h是載置在電路基板g的表面 半可里设於5路基板g的表面。另外,S 1電路h的形成方 路^板Z而接著,如圖駕所示的,在已形成第1電路h的電 成絶緣層1。接著,如圖24C所示的,在絶緣 戶;妒成之谢上形成樹脂皮膜J。接著,如圖24D所示的,白 料表面妨雷射加工,則彡成频樹脂皮膜 id t朱度的電路圖案k以及層間連接用孔m。電路圖案 到電難剛㈣位。料,制連接用孔m, 到達電岔基板g的第! ,使該第i電路“零出。 表面接所示的’在樹脂皮膜j的表面、電路圖案u ίί雷的表面以及所露出之第1電路_表面上 有“在外’雖然從後述的無電解電鍍的觀點來看並沒 =ίί h的表面上披覆電鐵觸❹,然而在整個絶 緣層^上披覆電鑛觸—可達到簡化作業之 87 201146113 = 皮膜j。然後,如圖㈣示的,對 上形成無電解電鍍膜以在絶緣層i上形絲2 f氣電 使無電解電麵從層間連接祕m的底部的第丨電路h成長 此用電鍍金屬填充層财翻以形成 ^ ^而j像這樣在電路_ k的部分與連接職 電^成導體i則電路部分的配線用溝槽㈣寬很 龄利孔深度也_ ’故雜導體形成的時間 句很短,i_層間連接用孔的徑長比配線用溝 電路部分更深,因此電鍍金屬填充需要較長時間。因此,若 部分的導體喊終了時點無電解電鍍終了的話,如圖2犯所示的, if會不夠充分’而成為電路與賴連接用孔 fiΞ i 若絲進行無電解麵直到賴連接用 二j刀被,充,職路部分會形献縛體而料發生短路等 另Λ ’有文獻提出縮小層間連接用孔的容積,以在短時間内 ί 的金屬填充’因此’使層間連接用孔的深度變 並使層間連制孔的絲縮小。細,就前者而言,在 ,的,計上有很多_,_實現。另外,就後者而言,層間連接 用孔與電路的接_積會變小,層間連接的可靠度會降低。假如, ϊί,ί接用孔的徑長縮小到與電路圖案的配線用溝槽的寬度相 同或在,、以下’雖然能夠在短時間内完成金屬填充,但是此時,電 鐘膜會從賴連翻孔的魄面从底部成長㈣,而且也會從電 路圖案側成長出來,故容易在金屬柱的内部產生孔隙。 本發明之目絲於提供-種乡層電路紐的製造方法,其 ^在利用增層法製造多層電路基板時制加成法的情況下的上述 問題點’即使細微電關案與層間連接用孔混合存在,也能夠在層 =連接用制充分而糊地填充鋪,並防止·部分形成多餘&The top portion is not cut from the bottom surface of the circuit diagram _ to prevent the conductor layer formed on the top of the metal pillar F22 from being etched from the surface of the H 201146113. Does not increase, the circuit is formed by the formation of the surface; using, for example, the soft side rides the F2G's watch to turn off the bottom of the bottom of the ίΐ ίίί metal column _F22 coffee until the circuit pattern F25 [fourth implementation] 07 The multi-second power of the method, the technical field of the ancient substrate, the portable information terminal device, the computer and its periphery, which are mainly used in the multilayer circuit H manufactured by the additive method and the manufacturing method, are in the & The electrical devices such as the type of planting are rapidly developing toward a high degree of functionality. The scales are higher than those of the electric plates (4), and the electrical power is more (four). In order to achieve high density of these circuit boards, we have correctly In the wiring which forms a circuit having a narrower line width and a spacer, it is easy to cause short-circuit or migration between wirings, and the wiring is thinner in the width of the wiring. Strength will decrease, circuit capacity :,, 'After the impact and other factors, it was broken by seven. In addition, the stacking 娄 owes the booster port, and in the circuit formation, the unevenness of the life becomes larger, and it becomes difficult to form a fine circuit. It is known that there is a subtraction method or an addition method for the method of the slab of the wire plate. The smashing method is to remove (subtract) the metal from the portion other than the portion where the circuit is to be formed on the surface of the metal iridium stacking plate. The method of forming a circuit. On the other hand, the domain method is a method of forming an electric circuit by electroless plating to form a circuit portion of the substrate. Λ In general, the subtraction method is to thicken the etching film. The metal foil is a method of residual metal f| on the = part of the circuit to be formed. If this method is used, the metal part of the cis-removal portion is wasted. On the other hand, the additive method can only be used in the portion where the metal wiring is to be formed. The upper shape 85 201146113 becomes an electroless power, so no metal is wasted. From this point of view, the additive method is a circuit formation method. w The conventional additive method of the additive method is as follows. Carry out, 'coating the surface of the insulating substrate. _. Next, The light-forming layer of the dielectric material is then developed. Then, the light pattern of the photoresist layer is developed through the photomask that has formed the predetermined electrical pattern, and then the circuit pattern is developed. Then, the surface formed by the development is subjected to electroless plating. To form an electric circuit on the portion of the electrical circuit. By these steps, an electrical circuit can be formed on the insulating substrate. - In the above conventional additive method, the entire surface of the insulating substrate is formed. There are three kinds of problems on the top of the film. That is, when the photoresist layer ίί ^ is high-precision, it can be formed in the non-tilted part of the photoresist when it is not formed. When developing, 'there may be some defects in the part that would not be formed in the circuit. Because the plating film on the insulating substrate _ the recording surface may cause short circuit or migration between adjacent circuits. , when the line width is widened and the narrower circuit is used to separate the circuit, the problem is solved. 'I think about the application, for example, Japanese Special Report No. 58-18_ is as follows, ί. First, a resin protective film is coated on an insulating substrate. A groove and a through hole for forming a corresponding circuit pattern are formed on the insulating substrate coated with the protective film by a mechanical force or a laser beam #7j. Next, an activation layer is formed. Next, the resin protective film is peeled off, and only the groove is guided by the enthalpy, and the shape of the hole is _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ T^ part or through the inside of the through hole _ and so on to make a patent application for the absence of electricity and the content of the amp; (Japanese singularity 2_-118818 曰 特 特 特 特 特 2〇〇 9-104086, etc.) . The circuit forming method of the patent application. Referring to Fig. 23, first, as shown in Fig. 23A, a resin film 86 is applied on the surface of the insulating substrate a, which is inhibited by the material, and is on the insulating substrate a of the 14 lining b. The groove "go through the hole d. In addition, although the surface of the surface is the same as that of the surface of the surface of the surface of the slab, the groove c may be deeper on the surface of the gully. Next, as shown in Fig. 23C, the total magnetic θ + and the surface of the through-hole 4 and the surface of the resin film 15 are coated with the electric ore n. Here, the 'keybox catalyst' conceptually includes its precursor to peel off the resin skin b) to form an acoustic opening on the residual portion of the plating catalyst e after the groove and the ship are formed, as shown in FIG. In the method of manufacturing a multilayer circuit board having a high density, it is known to form a via hole which is a hole for interlayer connection side by side, and FIG. However, if these addition methods are applied, referring to the addition method of Fig. 24, it is possible that Qiansheng Town has a problem. The circuit in which the first electric circuit 11 has been formed is prepared as shown in Fig. 1. The circuit h is mounted on the surface of the circuit board g on the surface of the five-way substrate g. Further, the circuit 1 of the S 1 circuit h is formed, and then, as shown in the figure, the electrically insulating layer 1 of the first circuit h is formed. Next, as shown in Fig. 24C, a resin film J is formed on the insulator. Next, as shown in Fig. 24D, the surface of the white material is subjected to laser processing, and the circuit pattern k of the resin film id t and the interlayer connection hole m are formed. The circuit pattern is just to the electric hard (four) position. Material, the connection hole m, the first to reach the electrode substrate g! The i-th circuit is "zero-out. The surface is shown on the surface of the resin film j, the surface of the circuit pattern u ίί ray, and the exposed first circuit _ surface has "outside" although not electroless from the following From the point of view of electroplating, there is no electric iron contact on the surface of the ίί h, but the electric ore touch is coated on the entire insulation layer - it can achieve a simplified operation. 87 201146113 = film j. Then, as shown in Fig. 4, an electroless plating film is formed on the upper surface to form a wire 2f gas on the insulating layer i, so that the electroless electric surface grows from the second circuit h of the bottom of the interlayer connection m. This is filled with a plating metal. The layer of wealth is turned over to form ^ ^ and j like this in the part of the circuit _ k and the connection of the occupational power into the conductor i, the circuit part of the wiring trench (four) is wide and the depth of the hole is also _ 'the reason for the formation of the hetero-conductor Very short, the diameter of the i_ interlayer connection hole is deeper than that of the wiring trench circuit portion, so plating metal filling takes a long time. Therefore, if some of the conductors are not finished at the end of the electroless plating, as shown in Figure 2, if will not be sufficient 'because the circuit and the connection hole fiΞ i if the wire is electroless until the connection is used The knife is quilted, filled, and the part of the road will be shaped to be short-circuited, etc. 'There is a literature suggesting to reduce the volume of the hole for interlayer connection, so as to fill the metal in a short time ί 'so that the hole for interlayer connection The depth changes and the filaments of the inter-layer holes are reduced. Fine, as far as the former is concerned, there are a lot of _, _ implementations. Further, in the latter case, the connection between the holes for the interlayer connection and the circuit becomes small, and the reliability of the connection between the layers is lowered. If ,ί, ί, the diameter of the contact hole is reduced to the same width as the width of the wiring pattern of the circuit pattern, or below, although the metal filling can be completed in a short time, but at this time, the electric clock film will depend on The crotch surface of the flip hole grows from the bottom (4), and also grows from the side of the circuit pattern, so that it is easy to generate voids inside the metal post. The object of the present invention is to provide a method for manufacturing a kind of rural circuit, which is the above-mentioned problem in the case of the additive method in the case of manufacturing a multilayer circuit substrate by the build-up method, even if the fine electrical connection and the interlayer connection hole are used. If it is mixed, it can be filled and smeared in the layer=connection system, and it can prevent the part from forming excess &

月.SL 88 201146113 亦即,本發明的多層電路基板的製造方法,係一種旦備相互連 =1!„連接用孔的多層電路基板的製造方法,包含: 絡丄鮮#電^&lt;電路的電路基板的電路形成面上形成絶緣層的 路H外表面在該絶緣層上形成開孔’使第1電氣電 驟;在露出之第1電氣電路上用電鑛金屬填充 成屬柱的金胁形成步驟;在該絶緣層的外表面以及 =金屬柱的頂部形細脂皮朗皮麟成步驟:從職脂皮膜的外 、面^成具有至少鋪脂越之厚度以上的既定深度以及既定形 狀的溝槽及/孔以形成電路_的電路_形成步驟;在該樹 i旨ί膜的表面上以及該電關案的表面上披覆電鍍觸媒的觸媒披 覆々,,從親緣層除去鋪脂皮麟皮膜除去步驟;以及對該絶 緣層只轭無電解電錢’在殘留電鑛觸媒的電路圖案的部分以及該金 屬柱的露出部分形成電細以在親緣層上形成第2電氣電路,同 時使該絶緣層的第2電氣電路與該電路基板的第丨電氣電路透過該 金屬柱在層間連接的電鑛步驟。 若利用上述方法,由於以電路圖案形成前的絶緣層形成步驟、 開孔形成步驟以及金屬柱形成步驟預先用電鑛金屬填充層間連接 用孔,故無須在意電路部分是否形成多餘的導體,而能夠花時間充 分地在層間連接用孔内填充金屬。另外,由於電路圖案尚未形成, 故電鍍膜不會從電路圖案側成長出來,可防止孔隙產生,使金屬填 充情況良好。然後,由於在層間連接用孔的金屬填充完成之後,利 用皮膜形成步驟、電路圖案形成步驟、觸媒披覆步驟、皮膜除去步 驟以及電鍍步驟’以圖23A〜圖23E所説明的加成法形成電路部分 的導體,故能夠在短時間内形成精度良好的細微導體,並防止在電 路部分形成多餘的導體。根據以上内容’即使細微電路圖案與層間 連接用孔混合存在,也能夠適當應用加成法,以增層法順利製造出 多層電路基板。 金屬柱形成步驟所形成的「金屬柱」,只要厚度比構成電氣電 路的導體層更厚’有在電氣電路上朝約略垂直方向突出設置的導電 性凸部即可,其形狀並無特別限定。例如’除了圓柱或角柱等剖面 89 201146113 ,狀固定的柱狀之外’也包含剖面形狀在長度方向上變化的圓錐二 狀或角錐台狀。 σ 在電路圖案形成步驟所形成之電路圖案的「溝槽」,主要是配 、=溝槽’「開孔」_如電極势部用的開孔。惟因應狀況,亦可 為層^接用孔(有別於先前金屬填充完成的層間連接用孔)。 虽在電路圖案形成步驟形成具備與樹脂皮膜厚度相同之 及/或開孔時’由於電路圖案留在絶緣層的外表面之上,Ϊ ^電氣電路的導體層形成紐在絶緣·外表面之上的狀態 面,當形成具備超過樹脂皮膜厚度之深度的溝槽及聞# 案的:部或全部位於挖掘到比絶緣下 〇^ 構成電氣電路的導體層形成-部或全部埋設於絶緣声 的在後者的情況下’可增加導體層的厚度’確保電i 另外’還能夠消除或減少導體層從絶緣層突Σ之 ί所ίί3凸防止電路從絶緣層·消除或減少在電路形成面 本發明宜在電路圖案形成步驟以金屬柱的頂# 沾仙4成之第2電氣電路的部分當作電極用塾部。理由為今屬知 的你時·^金屬柱形成步驟令’將電鍍金屬填充到電路圖牵麻而 屬柱成長到i緣;表面-致時,使金 掘到比絶緣層的外表面更下面的位置睥,if路圖案的底面挖 的外表面,而是使絲停止在其 使j域長观緣層' 〈刖的冋度。猎此,便可輕易達成 90 201146113 突前出的二柱:成步驟的階崎 在金屬柱形齡驟之後,將金屬柱的頂部除去到電 ,藉此,在電路圖案形成步驟中,金屬柱的頂部 佔八出或大出。如是,便可確實達到修正金屬柱的頂部的位置 使至屬柱的頂部不會從電路圖案的底面突出之目的。 另:卜本發㈤^供另—種*有相互連接之電氣電路* 電ϊϊΐίίϊ基板的製造方法,包含:在形成有第1電1電路的 i出之第成^孔’使第1電氣電路露出的開孔形成步驟;在 屬柱料牛驟電ΐ電路上用電鑛金屬填充該開孔以形成金屬柱的金 在該絶緣層的外表面上以及該金屬柱的頂部上^ 膜成步糊脂皮膜的外表面形成具㈣^ 形成電路ίί㈣深度以及既定形狀的溝槽及/或開孔以 電路圖荦案形成步驟;在該樹脂皮膜的表面上以及該 該絶緣鍍觸媒的觸媒披覆步驟;將該樹脂皮膜從 觸媒的i關宰驟,以及實絲1解電_在殘留電鍍 ^囷案的邓刀上以及該金屬柱的露出部分上形成雷鲈瞪 路與i電第氣電路’同時使該絶緣層的第2電“ 步驟;在該電路透過該金屬柱在層間連接的電鍍 不從電電路_形成步驟中,以金屬柱的頂部 中的村喊魏職,顧擅除去步^ 圖荦外表面到電路_的底面的距離為d卜電路 d2 ^ °&lt;^^^30〇/o 部不會從電路圖面步驟,以金屬柱的頂 =去步驟中,將樹脂皮膜除去卜在皮膜 面更後退之峨心鱗,====== 91 201146113 =體層從絶緣層的外表面突出,顧除在電路形成面上所產生之 電路Ξ 外表面到電路圖案的底面的距離(亦即 比電路圖案 屬ίί ’ f電路與層間連接用孔的連接情況十分良好。 的庇“卜’在金雜形齡射,魏金屬填充縣到達電路圖案 電’藉此’在電路圖案形成步驟中’金屬柱的頂部3 路出,在皮膜除去步驟中,使金屬柱的頂部在比電 位置露出’故在電路圖案形成步驟以及皮膜 幸的麻而屬柱形成步驟的階段’金屬柱的頂部不從電路圖 案的底面犬出這個特徵便比較容易達成。 露出j af 3 ί屬柱形成步射,係_無電解魏使電鑛膜從 電ί開始成長’以用電錢金屬填充開孔。由於利用 屬柱'。、氣。路虽作無電解電鑛的電鑛核,故能夠合理地形成金 卜’本發明亦可在金屬柱形成步財,於絶緣層的表面、開 電㈣s拔;出之第1電氣電路的表面上披覆電鍍觸媒’並對 金屬抑施無電解賴,之後再實施電解賴,以用電鑛 伽Ξίίϊ 後’除去在包含絶緣層表面在内的絶緣層外表面 11 f鍍金屬。在包含輯層表面在_絶緣層的外表面側形 ϋ電解電鑛層,被利用當作在電解電鑛中所必要的給電層,故 月匕夠合理地形成金屬柱。 @'、六ΐ本ί明中’樹脂皮膜宜為可被既定液體溶解或膨潤而從絶緣 二去或剝離除去的樹脂皮膜。使用該等樹脂皮膜,便可輕易 絶緣層表面將樹脂越除去。若在除去樹脂皮膜時樹脂 雷雜該樹脂皮膜上的電錢觸媒會飛散,所飛散之 電鑛觸媒再二人披復到絶緣層上會在該部分上形成多餘的電鑛膜。若 92 201146113 =而糊地從絶緣層表面將樹脂皮膜除去的話 ,便能夠防止這 明的多層電路基板’係以上述製造方法所製造的多 連期孔充分填充金屬,触 好,不會在電路部分形成多餘的導體,且不ΐ 引起短路等問題的多層電路基板。 勿 =即,本發明的第4實施態樣包含以下技術内容。 ίΪΐίΐΪί㈣嫩緣胸剛軸步驟;從外表面在該 ίί 1雷^= 1電魏路露出的開孔形成步驟;在露出 成牛驟,ίϊίΐ^钱金屬填充該孔以形成金屬_金屬柱形 冰度以及既定形狀的溝槽及,或開孔以形成電路 步驟;在該樹脂皮膜的表面上以及該電路圖案 觸,觸媒披覆步驟;從該絶緣層除去該樹脂皮 金屬柱的露出部分形成電鍍膜並在 :ί電:電同時使該絶緣層的第2電氣電路與 電减祕^該金屬柱在相連接的電鑛步驟。 、去if *:々如請求項4-1所記載之多層電路基板的製造方 ’在電路_形成步驟中,以金屬柱的頂部從電路^的 形成電路圖案’以覆蓋該金屬柱的頂狀方 式所形成的第2電軋電路的部分被當作電極用墊部。 法,求項4-1所記載之多騎路基板的製造方 的底二頂部不從電路圖案 睛求項4-4.如請求項4—3所記載之多層電路基板的製造方 93 201146113 法’其中’在金屬柱形成步驟中’電鍍金屬填充到電路圖案的底面 的位置,藉此,在電路圖案形成步驟中,金屬柱的頂部不會露出或 請求項4—5.如請求項4—3所記載之多層電路基板的製造方 法其中,在金屬柱形成步驟之後,將金屬柱的頂部除去到電路圖 案的底面的位置,藉此,在電路圖案形成步驟中,金屬柱 會露出或突出。 ° 請求項4 —6. —種具有相互連接之電氣電路與層間連接用 ^多層電絲板的製造方法’包含:在形成有第丨錢電路之電路 土板的電_成φ上形成絶緣層的·層形成步驟;在該絶 二夕卜,面形成開孔,使第i電氣電路露出的開孔形成步驟;從“ j 1電氣電路用電鍍金屬填充該開孔以形成金屬柱的 成…驟’在該絶緣層的外表面以及該金屬柱的頂部形成樹脂 ^ ί ϊί ;從該樹脂皮膜的外表面形成具有至少該_^# 深度以及既挪狀的溝槽及/或開孔以形成電“ ^的電路_形成步驟;在該樹脂歧的表面上以及 圖案的部=金 上形成第2電氣電路,_使該絶緣_緣層 柱形成步射,魏金屬^ =$1在該金屬 該電路圖案形成步驟中,以金屬柱的的位置,在 電路圖案的底面更後退之位置露出柱的頂部在比 的外表面職路_的底面的_為df^娜越,當絶緣層 柱的頂部的距離為d2時,〇&lt;d2$dl 电路圖案的底面到金屬 請求項4~7.如請求項4~~1〜4___6 ^ 路基板的製造方法,其中,在金屬 中任1項所記载之多層電 氣電路開始利用無電解電鑛使電 j步驟中’從露出之第1電 X犋成長,藉此用電鍍金屬填充開 201146113 孔。 請求項4 —8.如請求項4—μ—6中任i項所記载 二板的製造方法’其巾’在金屬_成步驟巾,在絶緣層的表曰面、、 :的内壁面以及露出之第i電氣電路的表面上彼覆麵觸 觸媒彼覆部實施無電解魏,之後再實施電解電鍍,以用雷 填充開孔,之後,將在包含絶緣層表面在内的絶,矣 面侧析出的電鍍金屬除去。 曰的外表 請求項4-9.如請求項㈠〜4—8中任i項所記载之 的製造方法’其中’樹脂皮膜為可被既定液體溶解或膨i而 攸、、,色緣層溶解除去或剝離除去的樹脂皮膜。 請求項4-10. -種利用請求項4—】〜4_9中任】項 製造方法製造的多層電路基板。 °己载之 根據本發明,即使細魏賴案與賴連接祕混合 此夠適當顧加成法’綱簡層法順繼造多層電路 〔第4—1實施態樣〕 圖19係用絲示本實施態樣之多層電路基板⑴❺電 ,的構造以及層間連接用孔G21 (與金屬柱G22)的配置等的^ =圖。如晒示的,本實施態樣提供-種電氣電路G26與層間 =孔G21亦即介層孔相互連接之多層電路基板⑴。電路“ 線寬細微之配線G26a與電極用墊部G26b。電極用墊 與層間連接用孔G21重疊設置。 圖19中的I-Ι線表示圖2Q〜圖22的端視圖的切斷位置 為二為電路基板,符號⑴1為第1電氣電路,符號G20 ciif❿Γ虎1為層間連接用孔,符號G22為金屬柱,符號 ⑽二1结膜’符5虎G24為電路圖案,符號G25為電锻觸媒, ^G26為苐2電氣電路。如圖2〇1所示的,在該多層電路基板 其ϋ滅在電路基板G1G上的第1電氣電路G11與形成在電路 巧G1G上所堆疊之絶緣層⑽上的第2電氣電路⑽,透過形 g在絶緣層G2G上的層間連接用孔G21(與金屬柱G22)在層間連 95 201146113 &lt;電路基板準備步驟&gt; 在本實施態樣的製造方法中,首先,如圖2〇A所示的,準備 ^設置第1電氣電路G11㈣絲板G1G(電路基鱗備步驟)。另 外,雖然在20A中,第1電路G11是載置在電路基板⑽的表 面上,惟亦可埋設於電路基板G10的表面。另外,第j電路Gu 的形成方法不在關。可_例如減去法或加成法等習知電路形成 =形成。再者’電路基板可只在單面形成電路,或是在雙面均形 成電路。另外,也可以是多層電路基板。 射可採用雖在多層電路基板製造中所使用的各 棧基板’並無制限定。關於有機基板的具體例,例如:由環 氧樹脂、丙稀酸樹脂、聚碳酸醋樹脂、聚醯亞胺樹脂、聚苯硫^ 月二:氰酸酯樹脂、苯並噁嗪樹脂、雙馬來亞醯胺樹脂 巧月曰所構成的基板。電路基板⑽的態樣可為片材、薄膜 浸材,三維形狀的成形體等,並無特別限定。電路基板⑽的 度也無特別限^,例如,當為片材、薄膜、預浸材時,厚度可設 准更/設在20〜200μπι左右。另夕卜,電路.基板⑽的 孑、、,田说月,準妝以下圮載之絶緣層G20的詳細説明,盥相同。 &lt;絶緣層形成步驟&gt; ~ 接著,如圖20Β所示的,在設置有第!電路如的電路基板 二^面)上形成絶緣層G2〇(絶緣層形成步驟)。該 、,,色=層G2G,‘祕並無特別限定。具體而言,例如:片材、薄膜、 才以及三轉狀的成形體,或峨脂雜塗佈所形成。該絶緣 層G20的厚度並無特別限定。具體而言,當為片材、薄膜、預浸 材時,宜設在例如10〜2〇〇μιη,更宜設在2〇〜1〇〇μηι左右。另 該絶緣層G2〇亦可含有二氧化石夕粒子等的無機微粒子。絶緣層 ^路基板⑽的表面上堆疊片材、薄膜或預浸材, 形。另^卜’絶緣層⑽,亦可在電路基板⑽的表面上塗佈 液’之後使其硬化絲另外’亦可使職具以及框具等工具 入絶緣層材料’加壓使其硬化形成三轉狀的成形體,亦可、對片 96 201146113 料步驟,釘料所得的㈣堆疊在電路基 在加壓使其擴張貼合之後,使其硬化,或是加 …力£使其硬化,進而形成三維形狀的成形體。 錢Ϊί緣f tG2G可採肋❹層祕基板製造帽·的各種 ίίΐ別限定。關於有機基板的具體例,例如··以往多 所使用的例如由環氧樹脂、丙_樹脂、聚碳酸 ^二:丄匕亞月女樹脂、聚苯硫喊樹脂、聚苯贿脂、氰酸醋樹脂、 本並:脂、雙馬來亞醯胺樹脂等樹脂所構成的基板。</ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; The outer surface of the path H on which the insulating layer is formed on the circuit formation surface of the circuit board forms an opening in the insulating layer to make the first electrical circuit; and the exposed first electric circuit is filled with gold by the ore metal. The threat forming step; the outer surface of the insulating layer and the top portion of the metal pillar are formed by the step of forming a fine skin pebbles: the outer surface of the functional fat film has a predetermined depth of at least a thickness above the thickness of the fat and the predetermined a groove and/or a hole of a shape to form a circuit_forming step of the circuit _; a catalyst-coated ruthenium coated with a plating catalyst on the surface of the film and the surface of the circuit a layer removing the lining film removal step; and yokeing the insulating layer only yoke electroless money 'in the portion of the circuit pattern of the residual electrocaloric catalyst and the exposed portion of the metal pillar to form a thin electrode to form a layer on the limpid layer 2 electrical circuits while making this insulation The second electrical circuit of the layer and the second electrical circuit of the circuit substrate are electrically connected to each other through the metal pillar. If the method is used, the insulating layer forming step, the opening forming step, and the metal before the circuit pattern formation are used. In the column forming step, the interlayer connection holes are filled with the electro-mineral metal in advance, so that it is not necessary to care whether or not the excess conductor is formed in the circuit portion, and it is possible to take time to sufficiently fill the holes in the interlayer connection holes. Further, since the circuit pattern has not been formed, the electricity is generated. The coating film does not grow from the side of the circuit pattern, prevents the generation of voids, and satisfies the metal filling condition. Then, after the metal filling of the interlayer connection holes is completed, the film forming step, the circuit pattern forming step, and the catalyst coating step are utilized. The film removing step and the plating step 'the conductors of the circuit portion are formed by the additive method described with reference to FIGS. 23A to 23E, so that a fine conductor having high precision can be formed in a short time, and an unnecessary conductor can be prevented from being formed in the circuit portion. The above content 'even if the fine circuit pattern and the interlayer connection hole are mixed In addition, the additive method can be suitably applied to smoothly manufacture a multilayer circuit substrate by the build-up method. The "metal pillar" formed by the metal pillar forming step is thicker than the conductor layer constituting the electrical circuit. The conductive convex portion that protrudes in a direction perpendicular to the vertical direction may be used, and the shape thereof is not particularly limited. For example, 'the section other than the cylindrical or corner column 89 201146113, which is a fixed columnar shape' also includes a conical shape or a truncated cone shape in which the cross-sectional shape changes in the longitudinal direction. σ The "groove" of the circuit pattern formed in the circuit pattern forming step is mainly a matching, = trench "opening" - such as an opening for the electrode potential portion. However, depending on the situation, it is also possible to use a hole for the layer (which is different from the hole for interlayer connection completed by the previous metal filling). Although the circuit pattern forming step is formed to have the same thickness as the resin film and/or the opening is formed, 'because the circuit pattern remains on the outer surface of the insulating layer, the conductor layer of the electric circuit is formed on the insulating outer surface. In the state surface, when a groove having a depth exceeding the thickness of the resin film is formed, the portion or all of the portion is located at the portion of the conductor layer which is formed by the electric layer, or is entirely buried in the insulating sound. In the latter case, 'the thickness of the conductor layer can be increased' to ensure that the electric i can also eliminate or reduce the protrusion of the conductor layer from the insulating layer. The circuit prevents the circuit from being removed from the insulating layer. In the circuit pattern forming step, the portion of the second electric circuit of the top of the metal column is used as the electrode portion. The reason is that when you know this, the metal pillar forming step is to 'fill the plating metal into the circuit diagram and the column grows to the i-edge; when the surface-induced, the gold is drilled below the outer surface of the insulating layer. Position 睥, the outer surface of the underside of the if road pattern is dug, but the wire is stopped at the length of the edge of the j-domain. Hunting this, you can easily reach the two columns of the 2011 20111313 step: the step of the step of the step after the metal column is removed, the top of the metal column is removed to electricity, thereby, in the circuit pattern forming step, the metal column The top of the account is eight out or big. If so, the position of the top of the modified metal post can be surely achieved so that the top of the column does not protrude from the bottom surface of the circuit pattern. In addition: Bubenfa (5)^Supply another type* has an interconnected electrical circuit* The method of manufacturing the substrate includes: forming a first electrical circuit by forming a first hole of the first electric circuit a hole forming step; filling the opening with an electric ore metal to form a metal pillar on the column of the bovine electric circuit, and forming a metal paste on the outer surface of the insulating layer and the top of the metal post The outer surface of the film is formed with (4) forming a circuit ίί (4) a depth and a predetermined shape of the groove and/or the opening to form a circuit pattern forming step; a surface of the resin film and the catalyst plating step of the insulating plating catalyst The resin film is removed from the catalyst i, and the solid wire 1 is de-energized. On the Deng knife of the residual plating method and the exposed portion of the metal column, a Thunder road and an electric gas circuit are formed. 'At the same time, the second electric step of the insulating layer; the electroplating in which the circuit is connected to the interlayer through the metal post is not formed from the electric circuit_forming step, the village in the top of the metal column is shouted, and the step is removed. ^ The distance from the outer surface of the figure to the bottom surface of the circuit _ d Bu circuit d2 ^ ° &lt; ^ ^ ^ 30 〇 / o part will not from the circuit diagram step, in the metal column top = go step, the resin film is removed in the film surface more back to the heart scale, == ==== 91 201146113 = The body layer protrudes from the outer surface of the insulating layer, taking into account the distance from the outer surface of the circuit 产生 generated on the circuit forming surface to the bottom surface of the circuit pattern (that is, the circuit pattern is ίί 'f circuit and interlayer The connection hole is very good. The shelter "b" is in the gold-type age, the Wei metal-filled county reaches the circuit pattern electric 'by' in the circuit pattern forming step 'the top of the metal column 3 way out, in the film In the removing step, the top of the metal post is exposed at a specific electrical position, so that the feature is not seen from the bottom surface of the circuit pattern at the top of the metal column at the stage of the circuit pattern forming step and the step of forming the film. It is easy to achieve. Exposed j af 3 ί is a column forming a step, the system _ no electrolysis Wei made the electric film from the electric ί began to grow 'to fill the hole with the money metal. Because of the use of the column '., gas. Electro-mineral core of electroless ore, The invention can be formed reasonably. The invention can also form a step in the formation of a metal pillar, and the surface of the insulating layer is electrically opened (four) s; the surface of the first electrical circuit is coated with a plating catalyst and the metal is inhibited. The electrolysis is carried out, and then the electrolysis is carried out to remove the metal on the outer surface 11 f of the insulating layer including the surface of the insulating layer by electromagnetism. The surface of the outer surface of the insulating layer is formed on the surface of the layer containing the layer. The electrolytic electric ore layer is used as a power supply layer necessary for electrolytic electrowinning, so that the metal column is formed reasonably enough. @', 六ΐ本ί明中' resin film should be dissolved by a given liquid or a resin film that is swelled and removed from the insulation or peeled off. By using the resin film, the resin can be easily removed from the surface of the insulating layer. If the resin film is removed, the resin on the resin film will be scattered. The scattered electric ore catalyst will be formed on the insulating layer to form an excess electric ore film on the part. If 92 201146113 = and the resin film is removed from the surface of the insulating layer, it is possible to prevent the multilayer circuit substrate of the present invention from being sufficiently filled with metal by the multi-stage holes manufactured by the above manufacturing method, and it is not in the circuit. A multilayer circuit substrate in which a part of the excess conductor is formed without causing a problem such as a short circuit. Do not = that is, the fourth embodiment of the present invention includes the following technical contents. Ϊΐ Ϊΐ ΐΪ 四 四 四 四 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; And a predetermined shape of the groove and or opening to form a circuit step; on the surface of the resin film and the circuit pattern contact, a catalyst coating step; removing the exposed portion of the resin metal column from the insulating layer The electroplating film is: ίElectrical: electricity simultaneously makes the second electrical circuit of the insulating layer and the electroless metal step in which the metal post is connected. And if *: as in the manufacturing method of the multilayer circuit substrate described in the claim 4-1, in the circuit_forming step, the circuit pattern of the circuit is formed from the top of the metal pillar to cover the top of the metal pillar The portion of the second electric rolling circuit formed by the method is used as a pad portion for an electrode. In the method, the top of the bottom of the manufacturing circuit of the multi-way board described in the item 4-1 is not from the circuit pattern, and the manufacturing method of the multilayer circuit board is as described in claim 4-3. 'wherein' in the metal pillar forming step 'the position where the plating metal is filled to the bottom surface of the circuit pattern, whereby in the circuit pattern forming step, the top of the metal pillar is not exposed or the item 4-5 is requested. In the method of manufacturing a multilayer circuit board according to the third aspect of the invention, after the metal pillar forming step, the top of the metal pillar is removed to the bottom surface of the circuit pattern, whereby the metal pillar is exposed or protruded in the circuit pattern forming step. ° Claim 4-6. A method of manufacturing a multi-layered wire board having interconnected electrical circuits and interlayer connections includes: forming an insulating layer on the electric_form φ of the circuit earth plate on which the third money circuit is formed a layer forming step; in the case of the second, the surface is formed with an opening to expose the opening of the ith electrical circuit; the "j 1 electrical circuit is filled with the plating metal to form the metal ... Forming a resin on the outer surface of the insulating layer and the top of the metal pillar; forming a trench and/or an opening having at least the depth of the _^# and the opening from the outer surface of the resin film to form a circuit of "electrical" forming step; forming a second electrical circuit on the surface of the resin portion and on the portion of the pattern = gold, such that the insulating-edge layer pillar forms a step, and the Wei metal ^ = $1 in the metal In the circuit pattern forming step, the position of the metal pillar is further retracted at the bottom surface of the circuit pattern to expose the top of the column at the bottom surface of the outer surface _ is df^na, when the top of the insulating pillar When the distance is d2, 〇&lt;d2$dl circuit diagram The bottom surface to the metal request item 4 to 7. The method of manufacturing the circuit board according to the request item 4~~1~4___6 ^, wherein the multilayer electric circuit described in any one of the metals starts to use the electroless ore to make electricity In the step, 'the first electric X 露出 is exposed, and the hole of 201146113 is filled with the plating metal. Item 4-8. The manufacturing method of the two sheets described in item i of the item 4-μ-6, in the metal sheeting step, on the surface of the insulating layer, and the inner wall surface of the insulating layer And on the surface of the exposed i-th electrical circuit, the non-electrolytic Wei is applied to the surface of the contact medium, and then electroplating is performed to fill the opening with a thunder, and then, the surface including the insulating layer is The plating metal deposited on the kneading side is removed. The appearance of the item 4-9. The manufacturing method described in any of the items (a) to 4-8, wherein the resin film is dissolved or expanded by a predetermined liquid, The resin film removed by dissolution or peeling off is dissolved. Item 4-10. A multilayer circuit board manufactured by the manufacturing method of claim 4 -> 4_9. According to the present invention, even if the fine Wei Lai case and the Lai connection are mixed, it is enough to properly form the multi-layer circuit [the fourth embodiment of the invention]. The structure of the multilayer circuit board (1) of the present embodiment, and the arrangement of the interlayer connection holes G21 (with the metal post G22) and the like. As shown in the present embodiment, the present embodiment provides a multilayer circuit substrate (1) in which an electric circuit G26 and an interlayer = hole G21, that is, via holes are connected to each other. The circuit "wire width line G26a and electrode pad portion G26b. The electrode pad and the interlayer connection hole G21 are overlapped. The I-Ι line in Fig. 19 indicates that the cut position of the end view of Fig. 2Q to Fig. 22 is two. For the circuit board, the symbol (1) 1 is the first electrical circuit, the symbol G20 ciif ❿Γ 1 is the interlayer connection hole, the symbol G22 is the metal pillar, the symbol (10) the two 1 junction film '5' G24 is the circuit pattern, and the symbol G25 is the electric forging catalyst. ^G26 is a 苐2 electrical circuit. As shown in Fig. 2〇1, the first electrical circuit G11 annihilated on the circuit substrate G1G and the insulating layer (10) stacked on the circuit G1G are formed on the multilayer circuit substrate. In the second electric circuit (10), the interlayer connection hole G21 (with the metal post G22) on the insulating layer G2G is connected to the interlayer. 95 201146113 &lt; Circuit board preparation step&gt; In the manufacturing method of the present embodiment First, as shown in FIG. 2A, the first electric circuit G11 (four) wire plate G1G is prepared (the circuit-based sizing step). Further, in 20A, the first circuit G11 is placed on the circuit board (10). On the surface, it may be buried on the surface of the circuit board G10. The formation method of the jth circuit Gu is not closed. For example, a conventional circuit such as subtraction or addition may be formed = formation. Further, the circuit substrate may be formed only on one side or on both sides. Further, the multilayer circuit board may be used. The stack substrate may be used in the production of a multilayer circuit board. The specific example of the organic substrate is, for example, an epoxy resin, an acrylic resin, or a poly A substrate composed of a carbonated resin, a polyimide resin, a polyphenylene sulfide, a cyanate resin, a benzoxazine resin, and a bimaleimide resin. The circuit substrate (10) can be used as a substrate. The sheet material, the film dipping material, and the molded body having a three-dimensional shape are not particularly limited. The degree of the circuit board (10) is not particularly limited. For example, when it is a sheet, a film, or a prepreg, the thickness can be set to be more uniform. / It is set at about 20 to 200 μπι. In addition, the circuit, the substrate (10), the 说,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Next, as shown in Figure 20, there is a setting! The insulating layer G2 is formed on the circuit substrate (the circuit substrate). (Insulation layer forming step). The color=layer G2G, 'secret is not particularly limited. Specifically, for example, sheet, film, and And a three-turn shaped body or a grease coating. The thickness of the insulating layer G20 is not particularly limited. Specifically, when it is a sheet, a film, or a prepreg, it is preferably set to, for example, 10~ 2 〇〇 μιη, more preferably set at about 2 〇 to 1 〇〇 μηι. The insulating layer G2 〇 may also contain inorganic fine particles such as SiO 2 particles. The surface of the insulating layer substrate (10) is stacked on the surface, Film or prepreg, shape. Alternatively, 'insulating layer (10), can also be applied to the surface of the circuit board (10) after the liquid 'curing the wire', or tools such as tools and frames can be placed into the insulating layer material. 'Pressure to harden to form a three-turn shaped body, or the same as the piece 96 201146113, the (4) obtained by the nailing is stacked on the circuit base after being pressurized to make it expand and fit, to harden, or to add ... force to harden it to form a three-dimensional shaped body. Ϊ 缘 缘 f tG2G can be used to make a variety of ribs and layers of the substrate. Specific examples of the organic substrate include, for example, epoxy resin, propylene resin, polycarbonate, polystyrene resin, polyphenylene sulfide, and cyanic acid. A substrate made of a resin such as vinegar resin or a resin such as a fat or a bismaleimide resin.

姑沾樹脂,只要是構成可用於電路基板製造中的各種有機基 t j 即可’其他並無_限定。具體而言,例如:雙龄A 編雙紛F型環氧樹脂、雙齡S型環氧樹脂、芳烧基環氧 =酚醛型環氧樹脂、烷基苯酚酚醛型環氧樹脂、聯笨二酚 ίί=其萘^樹脂:峨二烯型環氧樹脂、苯酚類與具 '羥土之方香族醛的縮合產物的環氧化物、三聚異氰酸三縮 水甘油S旨、脂環族環氧樹脂等。再者,為了賦予阻燃性,亦可使^ ,,化,變性的上述環氧樹脂、含氮樹脂、含矽酮樹脂等。另 =讀脂Μ ’可單獨制上述各魏樹脂以及 Μ月曰,亦可組合使用2種以上。 另外,當用上述各樹脂構成基材時,一般而言,為了硬化,會 含有硬化劑。關於該硬化劑,只要是可以使用的硬化劑即可曰, 二他,無特別限定。具體而言,例如:二氛二胺、苯紛系硬化劑、 酉夂酐:糸:„、氨基三嗓紛齡系硬化劑、氮酸醋樹脂等。 該苯酚系硬化劑,例如:酚醛型、芳烷型、萜烯型等硬化劑。 為了更進一步賦予阻燃性,可使用例如經過填變性的苯酚樹脂或是 I二過科變性的氰酸酯樹脂等。另外,關於該硬化劑,可單獨使用上 述各硬化劑’亦可組合使用2種以上的硬化劑。 另外雖然並無特別限定,惟由於係利用雷射加工形成電路圖 案:故宜使轉1GG nm〜4GGnm波絲圍的雷射光的吸收率良好 的樹脂。具體而言’例如聚醯亞胺樹脂等。 另外,該絶緣基材(絶緣層)亦可含有填料。該填料可為無機微 97 201146113 加工粒子’並無制限定。若含树料,則在雷射 路出’填料的凹凸可提高鍍與樹脂之間的密合性。 機微粒子的材料,具體而言,例如:氧化雕说)、 ^s(ain) ^ ^ 笨的·鈦ι〇2相1^介電常數填充材料;硬鐵氧磁體 ; (〇H)2) ^ ft^blS(Al (OH)2) ^ ^ 月匕萨铉笪二ί、&amp;五氧化銻(sb205)、胍鹽、硼酸鋅、鉬化合物、硬The resin is not limited as long as it constitutes various organic groups t j which can be used in the production of a circuit board. Specifically, for example, two-year-old A-type double-type F-type epoxy resin, two-year-old S-type epoxy resin, aryl-based epoxy=phenolic epoxy resin, alkylphenol phenolic epoxy resin, and two-part epoxy Phenol ίί = its naphthalene resin: decadiene type epoxy resin, epoxide and epoxide of condensation product of 'hydroxyl-containing aromatic aldehyde, trimeric isocyanuric acid trihydrate, alicyclic Epoxy resin, etc. Further, in order to impart flame retardancy, the epoxy resin, the nitrogen-containing resin, the fluorenone-containing resin, and the like may be obtained. In addition, the above-mentioned Wei resin and Μ月曰 may be separately produced, or two or more types may be used in combination. Further, when the substrate is composed of the above respective resins, generally, a curing agent is contained for curing. The curing agent is not particularly limited as long as it is a usable curing agent. Specifically, for example, di- succinimide, benzene sizing agent, phthalic anhydride: hydrazine: „, amino triterpenoid curing agent, nitrous acid vinegar resin, etc. The phenolic curing agent, for example, phenolic type A curing agent such as an aralkyl type or a terpene type. For further imparting flame retardancy, for example, a phenol resin which has been subjected to a varnish or a cyanate resin which has been denatured by I, or the like can be used. The above-mentioned respective curing agents may be used singly. Two or more kinds of curing agents may be used in combination. Further, although it is not particularly limited, since the circuit pattern is formed by laser processing, it is preferable to make a lightning flux of 1 GG nm to 4 GGnm. A resin having a good light absorption rate. Specifically, for example, a polyimide resin, etc. The insulating base material (insulating layer) may further contain a filler. The filler may be inorganic micro-97 201146113. If it contains a tree material, the 'concave and convexity of the filler on the laser path can improve the adhesion between the plating and the resin. The material of the microparticles, specifically, for example, oxidized engraving, ^s(ain) ^ ^ Stupid · Titanium ι〇2 phase 1^ dielectric constant Filling material; hard ferrite magnet; (〇H)2) ^ ft^blS(Al (OH)2) ^ ^ 月匕萨铉笪二ί, &amp; pentoxide (sb205), strontium salt, zinc borate, Molybdenum compound, hard

Tso ) ; ^^^40,)(0¾) ^ 用卜CaCC&gt;3)、s料。·該無機微粒子,可單獨使 子’亦可組合使用2種以上。該等無機微粒子,由 评姉介電常數、_:性、粒徑分布、色調的自由度等 功能,性發揮的情況下,進行適當摻合以 厂二。又。十更可輕易達到咼度填充化之目的。另外,雖然並無特 =二惟f〇使用平均粒徑在絶緣層厚度以下的填料,宜;吏用ΐ均 k 〜1〇μηι的填料’更宜使用平均粒徑〇 〇細〜細的填料。 田另外’該無機微粒子,為了提高在該絶緣基财的分散性可 ,粒子在親緣基材中的分散性,亦可含 其,言:例如:環氧魏系、⑽ .ρί Γ二” 、苯乙烯基魏系、甲基丙觸氧基石夕 八^外,為了提高該無機微粒子在該絶緣基材中的 刀政性,亦可含有分制。該分散舰無特舰定。具體而兮, ^ 、巧酸S旨系、貌基聚_系、高分子系的分散g 3上系、欽酸鹽系等的魏偶合劑等。關於該石夕 坑偶&amp;小可早獨使用上述魏偶合劑,亦可組合使用2種以上。 例 關於该分絲,可單獨制上述分細,亦可組合朗2種以:&lt; =,關於該有機微粒子,具體而言,例如:橡膠微粒 的表面(電路形成面)上疊合絶緣層= 熱 98 201146113 另外,構成電路基板G10的素材種類以及樹脂種類亦可與 成絶緣層G20的素材種類以及樹脂種類不同。然而,從電路芙 G10與絶緣層G2G良好密合堆疊的觀點考量,宜為彼此相性良^ 不同種類’典型上彼此更宜為相同種類。 &lt;開孔形成步驟&gt; 接著,如圖20C所示的,從絶緣層⑽的表面(外表面)側進 雷射加工’以在絶緣層G2〇上形成層間連接用孔仰(開孔形 驟此時’層間連接用孔G21到達電路基板G1〇的第丨電路Gn, 使,第1電路G11露出。另外’雷射加工及其周邊技術的詳細説明, 以其他步驟所記載之雷射加工及其周邊技術的詳細説明為準,與呈 相同。 八’、 另外’在_雷射加王而露出之第丨f路Gn之上朗著 蝴+未顯示)。雜會絲導通情況不 良的f因’故且利用去膠潰處理除去。關於去膠渣處理,可使 =冗&gt;貝過賊溶顧爾除挪_的習知方法,並無 然而,亦可因應狀況省略去膠渣處理。 &lt;金屬柱形成步驟&gt; ^著’如圖20D所示的’在露出之第】電路GU上,實施益 電1,用電錢金屬填充該層間連接用孔G21:在層、 ίίίίί G22(金屬柱形成步驟)。另外,當實施 丄1 面,當實施電解電鍍時,在絶緣層G20的表 面開孔G21的内壁面以及所露出之 鍍觸媒,在對電鑛觸媒枯霜部你每A — 的表面披復電 電鍍,藉此if議之後,再實施電解 異充開孔G2卜之後,將在包含絶緣層 金屬柱G22的开^層G20的外表面側析出的電鑛金屬除去。 金胁G22的形狀、大小、間 例如,宜為約略圓柱狀,其声^ 行糧疋具體而5 〜5_m左右的金屬柱左右,底面的直徑在 等的金雜G22亦無^糾角柱狀、圓錐台狀或角錐台狀 99 201146113 另外,圖20D表示在該金屬柱形成步驟中金屬柱G22成長到 絶緣層G20的外表面(表面)的高度的情況。 然而,並非以此為限,在金屬柱形成步驟中,金屬柱G22亦 可成長到未到達絶緣層G20的表面的位置。當然,是以金屬柱G22 成長超過後述電路圖案形成步驟所形成之電路圖案G24的底面的 位置作為條件。 &amp;若利用,等方法’便可在後述皮膜形成步驟形成樹脂皮膜G23 之前,對使第1電路G11與第2電路G26在層間連接的層間連接 用孔G21充分填充,並形成能夠防止孔隙產生的良好金屬柱G22。 &lt;皮膜形成步驟&gt; 接著,如圖20E所示的,在絶緣層G2〇的外表面以及金屬柱 G22的頂部形成樹脂皮膜G23(皮膜形成步驟)。樹脂皮膜(光阻)G23 只要能夠在後述皮臈除去步驟除去即可,其他並無特別限定。樹脂 皮膜G23宜為可用既定液體溶解或膨潤而輕易地從絶緣層G2〇的 表,溶解除去或剝離除去的樹脂皮膜。具體而言,例如,由可用有 機溶劑或鹼性溶液輕易溶解的可溶型樹脂所構成的皮膜,或由可用 既定液體(細液)細的細性旨觸成的細#。糾,膨潤 性,脂皮膜’除了實質上不會槪定液體溶解,但會因為受到膨潤 而容易從絶緣層G2G的表關離的樹脂皮膜之外,還包含會被既 定液體膨潤而部分溶解,且會因為受到膨潤或溶解而容易從絶緣層 G20的表面剝離的樹脂皮膜,或會被既定㈣溶解,且會因為溶解 而容易從絶緣層G2G的表面剝離的樹脂皮膜。使用該等樹脂皮膜, ,可,易從絶緣層表面順利除去樹脂皮膜。若樹脂皮膜除去時樹脂 皮膜朋壞的話,龍在職脂賴上的電_媒錢散 電鑛觸媒可能會再次披制絶緣層上並在該部位上形成多餘 =膜。當樹脂皮膜容易從、絶緣層表面順利除去時,便可防止該等問 樹脂皮膜G23的形成方法並無特舰定。具體而言,例如, „ G2^表面(外表面)上塗佈可形成樹脂皮膜肪的液狀材 枓’之後1、乾_方法’妓在支持基板上塗佈該液狀材料之 100 201146113 ί蓉ίΐ 之樹脂皮膜轉印到絶緣層G20的表面上的方Tso ) ; ^^^40,)(03⁄4) ^ With Bu CaCC>3), s material. The inorganic fine particles may be used alone or in combination of two or more. These inorganic fine particles are evaluated by the functions of dielectric constant, _: property, particle size distribution, and degree of freedom of color tone, and are appropriately blended in the second place. also. Ten can easily achieve the purpose of filling. In addition, although there is no special = two only f 〇 using a filler having an average particle diameter below the thickness of the insulating layer, it is preferable to use a filler having a mean particle size of 〜1 〇μηι. . In addition, in the inorganic fine particles, in order to improve the dispersibility in the insulating base, the dispersibility of the particles in the neighboring substrate may be contained, for example: Epoxy, (10), ρί Γ ”, In addition to the styrene-based weiss-based and methyl-propenyl-oxygenate, in order to improve the chemical properties of the inorganic fine particles in the insulating substrate, the distributed ship may also have a special system. ^ , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , For the split yarn, the above-mentioned fine fraction may be separately prepared, or two types may be combined: &lt;=, regarding the organic fine particles, specifically, for example, rubber particles The surface of the surface (circuit formation surface) is superposed on the insulating layer. = Heat 98 201146113 The material type and resin type of the circuit board G10 may be different from the material type and resin type of the insulating layer G20. However, the circuit G10 and The viewpoint that the insulating layer G2G is well-closed is considered to be The phase is good. ^The different types are typically more of the same kind with each other. &lt;Opening Hole Formation Step&gt; Next, as shown in Fig. 20C, laser processing is performed from the surface (outer surface) side of the insulating layer (10) to The interlayer connection hole is formed on the insulating layer G2, and the first circuit G11 is exposed. The laser beam is exposed to the first circuit G11. The detailed description of the surrounding technology, based on the detailed description of the laser processing and its surrounding technology described in other steps, is the same as that of the same. Eight', and 'in the _ laser plus the king exposed the first f road Gn Long butterfly + not shown). Miscellaneous wire conduction is not good due to 'definitely and used to remove the glue treatment. About the desmear treatment, can make = redundant> Beyond thief dissolve Guer Knowing the method, however, the desmear treatment may be omitted in response to the situation. &lt;Metal column forming step&gt; ^ On the 'exposed first' circuit GU shown in Fig. 20D, the benefit power 1 is used. The electric money metal fills the interlayer connection hole G21: in the layer, λίίίίίίίίίίίίίίί In addition, when the surface is formed, when the electrolytic plating is performed, the inner wall surface of the opening G21 on the surface of the insulating layer G20 and the exposed plating catalyst are exposed to the electric arc catalyst. The surface of the surface is electroplated, and after the electrolysis dissimilar opening G2 is applied, the electro-mineral metal deposited on the outer surface side of the opening layer G20 including the insulating layer metal pillar G22 is removed. The shape, size, and interval of the threat G22 are, for example, approximately cylindrical, and the sound of the grain is specific to the metal column of about 5 to 5 mm, and the diameter of the bottom surface is not the same as that of the G22. Table-shaped or truncated cone shape 99 201146113 In addition, FIG. 20D shows a case where the metal post G22 grows to the height of the outer surface (surface) of the insulating layer G20 in the metal post forming step. However, not limited thereto, in the metal post forming step, the metal post G22 may also grow to a position where it does not reach the surface of the insulating layer G20. Of course, the position where the metal post G22 grows beyond the bottom surface of the circuit pattern G24 formed by the circuit pattern forming step described later is used as a condition. When the resin film G23 is formed in the film formation step described later, the interlayer connection hole G21 in which the first circuit G11 and the second circuit G26 are connected to each other is sufficiently filled, and the formation of pores can be prevented. Good metal column G22. &lt;Thin film forming step&gt; Next, as shown in Fig. 20E, a resin film G23 is formed on the outer surface of the insulating layer G2 and the top of the metal post G22 (film forming step). The resin film (photoresist) G23 is not particularly limited as long as it can be removed in the skin removing step described later. The resin film G23 is preferably a resin film which is easily dissolved or removed from the surface of the insulating layer G2 by dissolution or swelling of a predetermined liquid. Specifically, for example, a film composed of a soluble resin which can be easily dissolved by an organic solvent or an alkaline solution, or a fine film which can be made fine by a fineness of a predetermined liquid (fine liquid). Correction, swellability, and lipid film 'except that it does not substantially determine the liquid dissolution, but it is easily swelled and partially dissolved by a predetermined liquid in addition to the resin film which is separated from the surface of the insulating layer G2G by swelling. Further, the resin film which is easily peeled off from the surface of the insulating layer G20 due to swelling or dissolution, or a resin film which is dissolved by a predetermined (four) and which is easily peeled off from the surface of the insulating layer G2G due to dissolution. By using these resin films, the resin film can be easily removed from the surface of the insulating layer. If the resin film is broken when the resin film is removed, the electric energy catalyst of the dragon's in-service grease may once again be coated on the insulating layer and form a surplus film on the part. When the resin film is easily removed from the surface of the insulating layer, it is possible to prevent the formation of the resin film G23 from being unspecified. Specifically, for example, „ G2^ surface (outer surface) is coated with a liquid material 可 which can form a resin film 之后, and then dry _ method 妓 coating the liquid material on the support substrate 100 201146113 ί The resin film of Rongίΐ is transferred to the surface of the insulating layer G20

法專。另外,其他方法例如:在絶緣層G J由預先形成之樹脂皮膜G23所構成的樹脂‘^^:二貼 狀材料的方法’並無_限定。具體而言、1羽 的旋轉塗佈法或棍塗佈法等。 j如以在白知 用來軸麟細G23哺料,卩妓麟 ⑽的絲轉除核獅除去的 /、並…、特別限疋。宜使用對既定液體的膨潤度在50%以上的 ^以用/调度在1〇〇%以上的樹脂,最好是使用膨潤度在 f另外,條繼辦, ^卜’ ^旨皮膜的膨潤度_可根據膨潤前重量 及Legal profession. Further, in another method, for example, the resin "method of the two-ply material" composed of the resin film G23 formed in advance is not limited. Specifically, a spin coating method or a stick coating method of one feather is used. j, as in the case of Baizhi used for the Axis fine G23 feeding, Kirin (10) silk removed the nuclear lion to remove /, and ..., especially limited. It is preferable to use a resin having a degree of swelling of a predetermined liquid of 50% or more or more than 1% by weight, preferably using a degree of swelling at f, and further, the strip is continued, and the swelling degree of the film is required. _ can be based on the weight before swelling and

:ί = 膨潤度sw= Um⑻—m(b)]/m(b)丨X1QQ 該等樹脂皮膜在絶緣層G2G的表面上塗佈雜體的縣 洋液,乳狀液讀使其賴的方法,献在支縣材上塗佈彈性^ 的懸净液或乳狀液之後,將乾燥後所形成之皮膜轉印在絶緣層G2〇 的表面上的方法等,便可輕易製得。 一 該彈性體的具體例,例如:苯乙烯—丁二烯系共聚物等的 了烯系彈性體,丙烯酸酯系共聚物等的丙烯酸系彈性體,以及聚酯 系彈性巧等。若利用該等彈性體,便可藉由調整分散成懸浮液或乳 狀液的彈性體樹脂粒子的交聯度或膠化度等輕易形成具備所期望 之膨潤度的樹脂皮膜。 ▲另外’該等樹脂皮膜特別宜為膨潤度相依於膨潤液的pH值而 變化的皮膜。若使用該等皮膜’藉由使後述觸媒披覆步驟中的液性 條件與後述皮膜除去步驟中的液性條件不同,便可在觸媒披覆步驟 中的pH值之下使樹脂皮膜G23對絶緣層G2〇維持很高的密合力, 並在皮膜除去步驟中的pH值之下使樹脂皮膜G23輕易地被剝離除 去。 更具體而言’例如’當後述觸媒披覆步驟具備例如在pH值1 101 201146113 的雜觸金屬職驗巾断處理的步驟,而後述 士膜除去步驟具備在pH值12〜14的範圍内的鹼性溶液中使 步驟時,該樹脂皮膜對該酸性觸媒金屬膠狀溶液的上 更宜在4()%以下,且對該驗性溶液的膨潤度宜I 01 ,更且在100°/°以上,最好是在500°/。以上。:ί = swelling degree sw= Um(8)—m(b)]/m(b)丨X1QQ These resin films are coated with the compound of the county liquid on the surface of the insulating layer G2G, and the emulsion is read by the method. After the coating of the elastic liquid or the emulsion is applied to the material of the branch, the film formed by drying is transferred onto the surface of the insulating layer G2, and the like can be easily obtained. Specific examples of the elastomer include an olefinic elastomer such as a styrene-butadiene copolymer, an acrylic elastomer such as an acrylate copolymer, and a polyester elastomer. When these elastomers are used, it is possible to easily form a resin film having a desired degree of swelling by adjusting the degree of crosslinking or the degree of gelation of the elastomer resin particles dispersed in the suspension or the emulsion. ▲ In addition, the resin film is particularly preferably a film whose swelling degree changes depending on the pH of the swelling liquid. When the liquid film conditions in the catalyst coating step described later are different from the liquid conditions in the film removal step described later, the resin film G23 can be made under the pH value in the catalyst coating step. The insulating layer G2 〇 maintains a high adhesion force, and the resin film G23 is easily peeled off and removed under the pH value in the film removing step. More specifically, 'for example, when the catalyst coating step described later is provided with, for example, a step of the hetero-metal contact treatment at pH 1 101 201146113, the subsequent step of removing the membrane is provided in the range of pH 12 to 14. In the alkaline solution, the resin film is more preferably 4 (%) or less on the acidic catalyst metal colloidal solution, and the swelling degree of the test solution is preferably I 01 , and more preferably 100 °. Above /°, preferably at 500°/. the above.

紐該iff皮膜1例如:由具有既定量的羧基的彈性體所形成的 用於印刷配線板的形成圖案用的乾膜光阻(以下亦稱為D ^的性的鹼性顯影型的光阻經過全面硬化之後所得到的片 材,或疋熱硬化性或驗性顯影型片材等。 if 絲的彈性體的具體例,例如:含有具有羧基解體 ^立作為絲成分,使分子中具雜基的苯乙稀—丁二烯系丘聚物 性體、^烯酸酯系共聚物等的丙稀酸系彈性體,或聚 潤度的樹脂皮膜。另外,也容易形成對於在去步 =中,用之既定液體的膨潤度更大,而會被該液體溶解的樹脂皮 f。彈性體中的緩基會因為驗性水溶液而使樹脂皮膜膨潤,具有使 樹月曰皮膜從絶騎G2G的絲繼的伽。糾,酸當量係 羧基的聚合物分子量。 田里妳相母 具有絲的單體單位的具體例,例如:(甲基)丙稀酸、富馬酸、 桂皮酸、巴豆酸、伊康酸以及馬來酸酐等。 關於該等具有缓基的彈性體中峨基的含有比例,盆酸告量宜 為函〜2〇〇〇 ’更宜為應〜_。當酸當量太小時(縣的^量相 對太多=)’與溶媒或其他組成物的相溶性會降低,導致對無電解 電鍍的前處理液的耐性會有降低的傾向。另外,#酸當量太^時後 基的數量相對太少時),對鹼性水溶液的剝離性會有降低的傾向。 另外’彈性體的分子量宜為1萬〜1〇〇萬,更宜為2萬〜5〇萬, 最好是2萬〜6萬。當彈性體的分子量太大時剝離性會有降低的傾 向,太小時粘度會降低,欲維持樹脂皮膜厚度均勻很困難,且對無 電解電鑑的則處理液的耐性也會有惡化的傾向。 102 201146113 .nt ^外,DFR以含有既定量之羧基的丙烯酸系樹脂、環童系谢 二=====旨丄胺曱酸乙醋系樹脂等作為樹脂成 …孓的DFR例如,旭化成股份有限公司製的系列等。 另外’關於其他的樹脂皮膜,例如j有綾基且財 ^苯^^歹^^川化工股份有限公司製的以娜趣29」) ^。本紛為主要成分的樹脂(例如,LEKTRACHEM公司製「綱F」) 树脂皮臈G23 ’用習知的旋轉塗佈法或棍塗佈法 液或乳狀液塗佈在絶緣層G2〇的表面上之後】: ί緣疊合機等工具將形成於支持基板上的DFR貼^於 、、曰G20的表面上之後使其全面硬化,便可輕易形 以下厚度’例如,宜在¥以下,更宜在5μηι 卜且在Ο]叫1以上’更宜在Ιμιη以上。當厚产太严祥, =射加工或機械加工形成細微電路 降 =傾另向外’當厚度太料,會有難以形成膜厚平 古的f ^ ’ ΐ樹脂皮膜肪宜使用例如以由酸等量在100〜_左 樹脂轉細賴絲的丙稀酸系 亦即再上述之外’該樹腊皮膜G23亦宜具備以下特性, 去步著藥液)的耐性較高;⑵在後述的皮膜^ .乾,Jl且除去樹脂皮膜(光阻);⑶成膜性較高;(4) 、 乂谷,(5)保存性較高等。關於電鍍核附著藥液,雖 103 201146113 膠狀觸媒系統的情況下, 情況下,觸媒賦予催化劑為弱^性^值m離子觸媒系統的 宜耐得住pH值1〜12。另外,.付fpH值1〜11,更 浸潰於藥液令時,光阻不仔住’疋指當光阻成膜樣本 外,一般而古潤或溶解,而»揮光阻的功能。另For example, a dry film resist for forming a pattern of a printed wiring board formed of an elastomer having a predetermined amount of carboxyl groups (hereinafter also referred to as D ^ alkaline developing type resist) a sheet obtained after being fully cured, or a thermosetting or inspecting developing sheet, etc. Specific examples of the elastomer of the if silk, for example, containing a carboxyl group disintegrating as a silk component, causing impurities in the molecule A styrene-based elastomer such as a styrene-butadiene-based or a acrylate-based copolymer, or a resin film having a degree of melamine, and is also easily formed in the step = a resin skin which is more swelled by a predetermined liquid and which is dissolved by the liquid. The slow-acting base in the elastomer swells the resin film due to the aqueous solution, and has a tree-shaped scorpion film from the G2G. The molecular weight of the polymer of the carboxyl group is determined by the molecular weight of the carboxyl group. For example, (meth)acrylic acid, fumaric acid, cinnamic acid, crotonic acid , itaconic acid, maleic anhydride, etc. The proportion of sulfhydryl groups in the elastomer, the pot acid should be a letter ~ 2 〇〇〇 'more suitable should be ~ _. When the acid equivalent is too small (the county's amount is relatively too much =) ' with solvent or other The compatibility of the composition is lowered, and the resistance to the electroless plating pretreatment liquid tends to be lowered. In addition, when the acid equivalent amount is too small, the amount of the rear group is relatively small, and the peeling property to the alkaline aqueous solution is small. There will be a tendency to decrease. Further, the molecular weight of the elastomer is preferably from 10,000 to 10,000, more preferably from 20,000 to 50,000, and most preferably from 20,000 to 60,000. When the molecular weight of the elastomer is too large, the peeling property tends to decrease, and when it is too small, the viscosity is lowered. It is difficult to maintain the uniform thickness of the resin film, and the resistance of the treatment liquid tends to deteriorate with respect to the electroless electricity. 102 201146113 .nt ^ In addition, DFR is made of an acrylic resin containing a carboxyl group of a predetermined amount, a ring of a ring of a child, or a acetaminophen resin, etc., as a resin, for example, DFR, for example, Asahi Kasei Co., Ltd. The series made by the company. In addition, as for the other resin film, for example, J has a ruthenium base and the benzene ^ ^ ^ ^ ^ ^ Chuan Chemical Co., Ltd. made by Naxi 29") ^. Resin which is a main component (for example, "French F" manufactured by LEKTRACHEM Co., Ltd.) Resin 臈 G23 ' is applied to the surface of the insulating layer G2 by a conventional spin coating method or a stick coating liquid or emulsion. After the above:: A tool such as a 缘 edge laminator will be formed on the surface of the DFR on the support substrate and then fully cured, and the thickness can be easily formed. For example, it should be below ¥, It should be 5μηι Bu and Ο] 1 or more 'more suitable for Ιμιη. When the thickness is too strict, = injection processing or machining to form a fine circuit drop = tilting outwards ~ when the thickness is too much, there will be difficulty in forming a film thickness of the flat f ^ ' ΐ resin film fat should be used, for example, to be acid The same amount of the acrylic acid in the 100~_left resin to the fine silk, that is, in addition to the above, the tree wax film G23 preferably has the following characteristics, and the resistance to the liquid medicine is high; (2) which will be described later. Film ^. Dry, Jl and remove the resin film (photoresist); (3) high film formation; (4), Shibuya, (5) high preservation. Regarding the electroplating core-attached chemical solution, in the case of the gel-like catalyst system in the case of 103 201146113, in the case where the catalyst is provided as a weak catalyst, the m-catalyst system is resistant to a pH of 1 to 12. In addition, when the fpH value is 1~11, the photoresist is not immersed in the liquid medicine order, and the photoresist is generally used as a film sample, which is generally ancient or dissolved, and has a function of light resistance. another

St,左右,惟並非以此為二== 吏 12到Η,便可輕易除去光_. 較:PH值 處理溫度為室溫〜50。(:,處理時間為= 度為1〜1〇%左右’ 灑處理,惟並非以此為限。為了在絶:开:二,以,潰或喷 變得报會I。,CA泪犯4、力士 緣材料上幵/成光阻,成膜性也 ΐ I ^ 步驟或減少材料損失等會進行乾膜化,秋 貼合在絶緣材料上。貼合的溫度為室温〜 160 C,勤或時間則隨意。如是,在貼合時便 , 經過乾膜化的光阻也會兼具防錄質崎 i 體膜、覆蓋膜夾合的3層構造,惟並 ,在室溫下保存當然是最好的,惟也必須要關在冷藏;^下ς ^必須在5鱗低溫下乾膜的組成不會分離,彎錄不會降低而裂 由以上觀點,該樹脂皮膜G23可為將(a)在分子中至少且有 個聚^性不飽和基的羧酸或酸軒的至少j種以上的單體以及、 體,合的至少1種以上的單體聚合所製得之聚合物樹脂,或 疋έ有該聚合物樹脂的樹脂組成物。關於習知技術,例如: 開平7-281437號公報、日本特開2〇〇〇 — 23119〇、日本特開細^ -201851等。關於⑻單體’例如:(甲基)丙烯酸、富馬酸、桂皮酸、. 巴豆酸、伊康酸、馬來酸針、馬來酸半醋、丙烯酸丁醋等,可單獨 104 201146113 使用,亦可組合使用2種以上。關於(b)單體,一般而言,例如:呈 非酸性且在分子中具有(一個)聚合性不飽和基者,惟並非以此為 限。、以保持在電鍍步驟中的耐性、硬化膜的可彎曲性等各種特性的 方,選擇即可。具體而,有曱基丙湘m旨、f基⑽酸乙醋、、 曱基丙稀酸異丙S旨、曱基丙烯酸正獨、f基丙稀酸第二丁醋 ^丙稀酸第三丁酯、曱基丙烯酸2_經乙醋、甲基丙烯酸2嚷丙酉旨類 荨。另外還有醋酸乙烯醋等的乙烯醇的酿類、甲基丙稀猜 或可聚合的苯乙烯衍生物等。另外利用在分子中有一個上 性 ,,的鲮酸或酸針的聚合也可製得。再者,以能夠3維交;的 ^式’在用於聚合物的單體帽出具備複數不飽 艾分巧J氧基、經基、胺基、醯胺基、乙稀基等反應性=基· ^樹脂中含有絲時,樹脂中所含有的祕量的酸 100—〜2_,較佳為励〜_,更宜為⑽〜6⑽。當酸 為 工溶媒或其触成物_雜或電麵處職耐性:的 向。f外⑻單體的組成比率宜為5〜70質量%。日-的 分,,主要樹脂(黏合樹脂)以該聚合物樹脂為必須成 主要單體、填料或其他添加劑等至少其中1 i 旦备丨 ,左右,且為5,〇〇〇〜50,000。若重量平的八; 二:、若或電鑛核附著藥液耐性(耐酸性 以iis液耐性、防止雷射加工時‘以 易用對ίΐ核崎驗的耐性或是可輕 可塑劑當作_性賦予二’可考慮用 劑。具體而言,例如··甲m者為了&amp;向各種耐性可添加交聯 稀酸異丙醋、甲基丙稀酸^丁酉U丙酸乙m丙 丁酉曰甲基丙烯酸弟二丁酯、甲基丙烯 105 201146113 f基稱酸2·經乙醋1基丙稀酸2·經丙_等。另 合的苯乙 丙^赌、苯乙稀或可聚 基的《或.丄另也 單rr述賴錢單敍Ϊ :,可包含其他二種以上的光聚合性單體。關於單 烯酸H Μ 己:醇一 f基丙烯酸醋小4·環己二醇二甲基丙 醇二甲基丙稀酸醋、聚乙二醇二甲基丙稀酸醋、 萨ί 9私一酵二甲基丙烯酸醋等的聚氧烧二醇二甲基丙烯 ^二新:一 ί對經苯基)丙烧二甲基丙稀啦旨、甘油三甲基丙烯酸 i丙甲基丙稀酸酉旨、三經甲基丙烧三環氧丙基驗三甲 二 文-曰二雙酚Α二氧化丙烯醚三甲基丙烯酸酯、2,2 —雙(4 甲其二氧基五乙氧基笨基)丙烧、含有胺基甲酸醋類的多官能 二=稀1等。亦可為上述的單體或使單體反應的寡聚物的其中 气羞限定’具體而言,例如:二氧切、氫氧化銘、 :ίη黏土、白陶土、氧化欽、硫酸銷、氧化銘、氧 填料蓉'冰Γ母、玻璃、欽酸卸、灰石、硫酸鎂、纖紹、有機 f ϋ。另外光阻的較佳厚度為α1〜1()μ1η很薄,故填料大小宜小 ΐίϊ。可使用平均粒徑小,粗粒經過切割者,惟亦可在分散時使 其碎裂,並過遽除去粗粒。 其他添加劑,例如:光聚合性樹脂(光聚合引發劑 ϋ、ΐ色劑(染料、顏料、發色系顏料)、熱聚合引發劑、環i基物 質或胺甲酸乙酯等的交聯劑等。 在,下來説明的電路圖案形成步驟中,樹脂皮膜G23,因為雷 射加工等的關係’必須湘雷射對姐材料賦予_性力: 機可選擇碳酸氣體雷射、準分子雷射或W—YAG雷射等。該等雷 射力〇工機具有各種m有波長,使用對該波長的吸收率較高的材料, 便可提高生,效率。其中UV_YAG雷射適合用於細微加工,雷射 波長為3倍高次譜波35^、4倍高次諧波266mn,光阻材料(樹脂 106 201146113 二==該率,高二是較佳的選 i好iiη 有選用-吸收率相對較低之光阻材料會比 集中能^對其下之越能=通過光阻肪,便可 二之材料時,_得“好的二二絶係=口 設定光阻=色緣層⑽的雷射加工的容易度及其關係等, &lt;電路圖案形成步驟&gt; ,著j如圖2GF所示的,在樹脂皮膜⑽的表面(外表 的^至〉、該樹脂皮膜G23的厚度以上的既定深度以及既定^ 圖以形成電路圖案㈣電路圖案形成步驟)。^路 圖案G24可用雷射加卫、切削加工或壓型加 ί^ί SIT槽主要是當作配線伽(參照圖19)用的溝槽,’St, left and right, but this is not the second == 吏 12 to Η, you can easily remove the light _. Comparison: PH value Processing temperature is room temperature ~ 50. (:, processing time is = degree is about 1~1〇%' sprinkle treatment, but not limited to this. In order to be absolutely: open: two, to, collapse or spray becomes a report I., CA tears 4 , 力 缘 材料 材料 成 / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / The time is arbitrary. If it is, the dry film-formed photoresist will also have a three-layer structure that prevents the recording of the film and the cover film, but it is of course stored at room temperature. The best, but must also be kept in the cold; ^ ς ^ must be separated in the 5 scales of the dry film composition will not separate, the bend will not decrease and the crack from the above point of view, the resin film G23 can be (a a polymer resin obtained by polymerizing at least one or more kinds of monomers having at least one polyunsaturated group of a carboxylic acid or an acid group in a molecule, and at least one or more monomers. Or a resin composition of the polymer resin. For the related art, for example, Kaiping No. 7-281437, JP-A-2-231-231 19〇, Japan special opening ^ -201851, etc.. About (8) monomer 'for example: (meth)acrylic acid, fumaric acid, cinnamic acid, crotonic acid, itaconic acid, maleic acid needle, maleic acid half vinegar , butyl acrylate, etc., may be used alone in 104 201146113, or may be used in combination of two or more. Regarding (b) monomer, generally, for example, is non-acidic and has (a) polymerizable unsaturated group in the molecule. However, it is not limited to this. It can be selected by maintaining various properties such as resistance in the plating step and flexibility of the cured film. Specifically, there are thiol-propion m-based and f-based (10) acid B. Vinegar, isopropyl isopropyl isopropyl S, methacrylic acid, f-acrylic acid, second butyl vinegar, propylene terephthalate, methacrylic acid 2 _ vinegar, methacrylic acid 2 There are also vinyl alcohols such as vinyl acetate and vinegar, methyl propylene or polymerizable styrene derivatives, etc. In addition, there is a bismuth acid in the molecule. Or the polymerization of acid needles can also be produced. Furthermore, in the form of a three-dimensional cross-over A complex amount of acid 100-~2_ contained in the resin when the resin contains a filament in the resin, such as a hydroxyl group, a mercapto group, an amine group, a mercapto group or a vinyl group; Preferably, the excitation is _ _, more preferably (10) ~ 6 (10). When the acid is a working solvent or a contact thereof, the impurity or the electrical surface is resistant to the work: the ratio of the composition of the monomer (8) is preferably 5 to 70 mass. %. Day--, the main resin (adhesive resin) with the polymer resin as a main monomer, filler or other additives, etc., at least one of them, about 5, 〇〇〇~50,000 If the weight is flat eight; 2: If the electric ore core is attached to the liquid chemical resistance (acid resistance to iis liquid resistance, to prevent laser processing), easy to use, or to be light plasticizer The _sexuality of the two' can be considered. Specifically, for example, in order to combine various resistances, it is possible to add cross-linked dilute isopropyl vinegar, methyl acrylic acid, butyl sulfonate, ethyl propionate, methyl propyl hydrazide, dibutyl methacrylate, Propylene 105 201146113 f-based acid 2 · ethyl acetate 1 - propyl acrylate 2 · propyl _ and so on. The other styrene, styrene, or mercapable "or. 丄 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 About monoenoic acid H Μ hex: alcohol-f-based acrylic vinegar small 4 · cyclohexane diol dimethyl propanol dimethyl acrylate vinegar, polyethylene glycol dimethyl acrylate vinegar, Sa 9 9 private A polyoxyalkylene glycol dimethyl propylene such as fermented dimethacrylate, etc.: a new pair of phenyl phenyl propyl methacrylate, glycerol trimethyl methacrylate酉 、 , 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三A silyl group, a polyfunctional bis group containing an amino carboxylic acid vinegar, a dilute 1, and the like. It is also possible to define the above-mentioned monomer or the oligomer of the monomer-reactive oligomer. Specifically, for example, dioxotomy, hydrazine, ίη clay, kaolin, oxidized chin, sulfuric acid pin, oxidation Ming, oxygen filler Rong's ice mother, glass, acid acid unloading, limestone, magnesium sulfate, fibrin, organic f ϋ. In addition, the preferred thickness of the photoresist is α1~1()μ1η is very thin, so the filler should be small in size. The average particle size can be used, and the coarse particles are passed through the cutter, but they can also be broken when dispersed, and the coarse particles can be removed by rubbing. Other additives include, for example, a photopolymerizable resin (photopolymerization initiator, a coloring agent (dye, pigment, chromonic pigment), a thermal polymerization initiator, a ring-based substance, or a crosslinking agent such as urethane). In the circuit pattern forming step described below, the resin film G23, because of the relationship of laser processing, etc., must be given to the sister material by the Xiang Lei laser: machine selectable carbon dioxide gas laser, excimer laser or W -YAG laser, etc. These laser-powered sizing machines have various m-wavelengths, and materials with higher absorption rates for the wavelengths can improve the efficiency and efficiency. Among them, UV_YAG lasers are suitable for fine processing, The wavelength is 3 times higher frequency spectrum 35^, 4 times higher harmonic 266mn, photoresist material (resin 106 201146113 two == this rate, the second is better choice i is good iiη has selectivity - relatively low absorption rate The photoresist material will be better than the concentration energy. The more it can pass through the light-resistance, the second material can be obtained. _ "Good two-two absolute system = mouth setting photoresist = color edge layer (10) laser The ease of processing and its relationship, etc., &lt;circuit pattern forming step&gt;, as shown in Fig. 2GF The surface of the resin film (10) (the outer surface of the film), the predetermined depth of the resin film G23 or more, and the predetermined pattern to form the circuit pattern (four) circuit pattern forming step). The road pattern G24 can be laser-assisted, The cutting or molding type is mainly used as a groove for wiring gamma (refer to Figure 19), '

Hii’i兄柯’f關案G24亦可包含相連接用ί盘 形ί步驟形成金屬柱G22關孔㈤1不同的層間連接 产下挪成具備樹脂皮膜⑽的厚度的電路圖案G24的 iiL’o而==邊的金雜G22所示的,形成不挖掘到絶 的&amp;能另/ 的表面(外表面)上載置電路圖案G24 在形成超過樹脂皮膜G23的厚度的電路圖案 的情況下,如® 20F的右邊以及中央的金屬柱G22、G2 ^ j ’會形成挖掘到絶緣層⑽而在絶緣層⑽的表 :&amp; 電路圖案G24的狀態。 回W表面)埋3又 在電路圖案G24愤線0施用溝槽的寬度並無特別限定。另 易形Γ吏用雷射加工時’即使線寬在卿㈣下的細微溝槽也很容 形成電路圖f G24的方法並無特別限定。具體而言,可使用 雷射加工、切割加工等的切削加工、壓型加工等。為 的細微電路圖案G24,宜使用雷射加工。利用雷射加卫,控 107 201146113 出「或功率)’絶緣層G2G的挖掘深度等便比較容易調整。 型加工’例如,宜制在奈米印刷謝使用細微樹 2電’之後賦予無電解電鑛膜限定出第 ㈣2 Jf7,係表示在該電路_形成步驟以先前在金層柱 it 金屬柱G22的頂部從電路圖案G24的底面露出 的方式形成電路圖案G24的情況。這是因為,如後所述的, ::雷2ίίΐί緣層G20時’構成絶緣層G2〇的樹脂很容 易除去’惟構成金屬柱G22的電錢金屬卻很難除去的關係。 &lt;觸媒披覆步驟&gt; θ亲=圖2GG所示的’在樹脂皮膜G23的表面上以及電路 3=24的表面上披覆電錢觸媒G25(觸媒坡覆步驟)。亦即,在已 G24的表面上以及未形舰關案G24的表面上整 電,媒G25。另外,從後述的無電解電鑛的觀點考量, 替:二^要特別在金屬柱G2?的表面上披覆電鍍觸媒G25,但在 Γ上彼覆電_媒G25可使作業簡易化。在此,; 鍍觸媒G25在概念上包含其前驅物。 電鑛觸媒G25係為了在後述電鍍步驟中欲形成無 成該賴膜而預先賦予的觸媒。電鑛觸媒G25可^用 ‘、,、f解電翻觸’無並無制蚊。糾,亦可預先坡 驅物,她旨皮膜G23除去後使電_= =。關於電錢觸G25的具體例,例如:除了金屬峰^、白金Hii'i brother Ke'f Guan G24 can also include the connection of the Ø disc's step to form the metal column G22 closed hole (5) 1 different interlayer connection to produce the circuit pattern G24 with the thickness of the resin film (10) iiL'o In the case where the circuit pattern G24 on the surface (outer surface) of the other surface is formed, the circuit pattern G24 which is formed on the surface of the resin film G23 is formed. The right side of the ® 20F and the central metal posts G22, G2 ^ j ' will be formed into the insulating layer (10) and in the state of the insulating layer (10): &amp; circuit pattern G24. Back to the W surface) Buried 3 The width of the groove applied to the circuit pattern G24 is not particularly limited. In the case of laser processing, it is easy to form a circuit pattern f G24 even if the line width is in the fine groove under the (4). Specifically, cutting processing such as laser processing or cutting processing, press molding, or the like can be used. For the fine circuit pattern G24, laser processing should be used. Using laser to enhance, control 107 201146113 out "or power" insulation layer G2G excavation depth, etc. will be easier to adjust. Type processing 'for example, it should be made in the nano printing thank you use the micro tree 2 electricity' after the electroless The mineral film defines the fourth (4) 2 Jf7, which indicates that the circuit pattern G24 is formed in such a manner that the circuit pattern G24 is previously exposed from the bottom surface of the circuit pattern G24 at the top of the gold layer pillar it metal pillar G22. This is because, as follows In the case of the G20, the resin constituting the insulating layer G2 is easily removed, but the structure of the metal money constituting the metal pillar G22 is difficult to remove. &lt;catalyst coating step&gt; Pro = shown in Fig. 2GG' on the surface of the resin film G23 and on the surface of the circuit 3 = 24, the electric money catalyst G25 (catalyst slope step) is coated. That is, on the surface of the G24 and the unshaped On the surface of the ship G24, the electric power is on the surface of the G24. In addition, from the point of view of the electroless ore that will be described later, it is necessary to cover the surface of the metal column G2 with the plating catalyst G25. On the other side of the electricity _ media G25 can make the work easier. Here,; plating The medium G25 conceptually includes its precursor. The electro-mineral catalyst G25 is intended to form a catalyst that is not previously provided in the electroplating step described later, and the electro-mineral catalyst G25 can be solved by ', , and f. Electric flipping 'no mosquitoes. Correction, can also pre-slope drive, she will remove the film after G23 to make electricity _= =. Specific examples of electricity money touch G25, for example: in addition to metal peak ^, platinum

Bf Ag博金屬之外,還包含可生成該等金屬的前驅物。&quot; 關於披覆電鍍觸媒G25的方法,例如:用可在 ==下進行處理的酸性Μ—%膠狀溶液進行處理之後;用 -文/合液進仃處理的方法。更具體而言例如以下的方法。 首先’將形成有電路_ G24的絶緣層G2G的表面上 =的溶液(清潔劑、調和劑)中進行既定Si 更先接者’因應茜要,用過硫酸鈉—硫酸系的軟侧劑進行軟餘 108 201146113 ^處理。然後,在pH值丨〜2的硫酸水溶液或鹽酸水溶液 接t,浸潰於濃度〇.1%左右的以氣化亞錫 //為要成为的預浸液中進行使氯化物離子吸附在絶緣芦 表面上的預浸處理。之後,再浸潰於含有氣化_與氣化^ #值1〜3的酸性抑—如膠狀物等的酸性觸媒金屬膠狀溶液以 產=Pd以及Sn。然後’在所吸附的氯化亞錫與氣化1巴之間 _==ta2+pdcl2—Sncl4+Pd丨)。藉此,析出電鐘 ,外’關於酸性觸媒金屬膠狀溶液,可使用習知的酸性Pd— 可採用市售使用酸性觸媒金屬膠狀溶液的 限公司所系統化販售者。 有 觸媒披覆處理,便可如圖2〇G戶斤示的,在樹脂皮膜 的表面上以及&lt;1路圖案G24的表面上披覆魏觸媒G25。 &lt;皮膜除去步驟&gt; 膜广所示的’從絶緣層⑽除去樹脂皮膜G23(皮 ,除去步驟)。亦即,當触細⑵為可溶_脂時 =或驗性溶液將樹脂皮膜G23溶解,從絶緣層G2()的表面除^。’ ί夕脂1膜G23為膨潤性樹脂時,使用既定液體使樹脂皮 膜G23膨潤’再從絶緣層G2〇的表面剝離除去。 良In addition to the Bf Ag metal, it also contains precursors that can form such metals. &quot; About the method of coating the plating catalyst G25, for example, after treatment with an acidic Μ-% colloidal solution which can be treated under ==; More specifically, for example, the following method. First, 'the solution of the surface of the insulating layer G2G on which the circuit _ G24 is formed (cleaning agent, blending agent) is determined by the predetermined Si first-passer, and the soft side agent of sodium persulfate-sulfuric acid is used. Soft Yu 108 201146113 ^ Processing. Then, it is connected to a sulfuric acid aqueous solution or a hydrochloric acid aqueous solution having a pH of 丨2, and is immersed in a pre-dip liquid to be vaporized in a vaporized stannous/concentration of about 1%. Prepreg treatment on the surface of the reed. Thereafter, it is further impregnated with an acidic catalyst metal colloidal solution containing an acidification such as a gasification of a vaporization amount and a gasification value of 1 to 3 to produce =Pd and Sn. Then 'between the adsorbed stannous chloride and the gasified 1 bar _==ta2+pdcl2-Sncl4+Pd丨). Thereby, the electric clock can be used, and the conventional acidic Pd can be used as the acid catalyst metal colloidal solution, and a commercially available company using a commercially available acidic catalyst metal colloidal solution can be used. With the catalyst coating treatment, as shown in Fig. 2〇G, the Wei catalyst G25 is coated on the surface of the resin film and on the surface of the &lt;1 road pattern G24. &lt;Thick film removal step&gt; The resin film G23 (skin removal step) was removed from the insulating layer (10) as shown in the film. That is, when the touch (2) is a soluble fat = or the test solution dissolves the resin film G23, it is removed from the surface of the insulating layer G2 (). When the film G23 is a swellable resin, the resin film G23 is swollen using a predetermined liquid, and is peeled off from the surface of the insulating layer G2. good

㈣皮膜除去步驟’便可在絶緣層G20的形成電路圖案G24 ^刀的表面上殘留電鑛觸媒25。另一方面,披覆在樹J 上的電鐘_ G25,會與樹脂皮膜肪一起從絶f層⑽ ,除去。在此,從防止自絶緣層G2〇 去之電鑛觸媒G2= 再次披覆魏緣;| G2G絲面上峨點來看,樹旨皮、 = ^使機細G23鑛絲_,只要是不 ^ 基^ G10、絶緣層⑽以及電賴媒〇25實質分解或 使樹腊皮膜G23轉或膨卿容妝絶緣 解除 : 除去之程度騎斷可,其他絲彻值定% 109 201146113 液體,可根據樹脂皮膜G23的種類或厚度等選擇較適當者。具體 而吕,例如,在使用光硬化性環氧樹脂作為光阻樹脂的情況下,可 使用有機溶劑或鹼性水溶液的光阻除去劑等。另外,例如,當樹脂 ^膜G23由二稀系彈性體、丙烯酸系彈性體以及聚酯系彈性體等 彈性體卿成時,或者,當樹脂皮膜G23是將⑻在分子中具有至 少1個聚合性不飽和基的羧酸或酸酐的至少丨種以上的單體以及⑼ 可與⑻單體聚合的至少1 _上的單體聚合所得_聚合物樹 月曰,或含有該聚合物樹脂的樹脂組成物時,或是由前述含有羧基的 丙烯酸系樹脂所形成時,宜使用例如濃度丨〜1〇%左右的氫氧化鈉 水溶液等的驗性水溶液。 另外,當在觸媒被覆步驟中使用以上述酸性條件進行處理的電 鍍程序時,樹脂皮膜G23冑由在酸性條件下膨潤度在6〇%以下, ^在40%以下,在驗性條件下膨潤度在5〇%以上的例如二稀系彈性 H烯酸系彈性體以及聚醋系雜體等的彈性體所形成,或是由 a刀f中具有至少1個聚合性不飽和基的敌酸或酸酐的至少1 八以士的單體以及可與該單體聚合的至少丨種以上的單體聚 m’j巧合物娜或含树聚合物旨_驗成物所形 刹田或^由前述含魏基_稀酸'㈣脂所形成。該等樹脂皮膜, 1 值11〜14 ’較佳為ΡΗ值12〜14的鹼性水溶液,例如濃度 二右的氮氧化納液等,便容易被溶解或膨潤,而被溶 =i剝離除去。S外’為了提高溶解性或彔嫌性’亦可在浸潰 寻用^波照射。另外,亦可因應需要輕輕用力將其剝除。 增^/Jl除去樹脂皮膜G23的方法,例如:將被樹脂皮膜G23披 、層G2〇浸潰在樹脂皮膜除去用液體中經過既定時間的方 用和立1外’為了提高剝離除去性或溶解除去性,制宜在浸潰時 外’當很難剝離除去或溶解除去時,可因應需要 &lt;電錢步驟&gt; 留雷二圖201所示的’對絶緣層G20實施無電解電鍵’在殘 留電鑛觸媒G25的電路圖案G24的部分上以及金屬柱G22的露出 110 201146113 G2° 2 竑,&amp; 使°亥絶緣層G2〇的弟2電路G26盥雷路美拓Π1Γ)的 ί電透過該金屬柱G22在連細鍍步‘利用該等 便可在職電路_ G24的部分上析出精度良 G25 方法’可制例如將部分披覆有電鍍觸媒 ⑽巾’卩蝴有電鑛觸媒 鋁(Aim電解電錢的金屬’例如:銅(CU)、鎳⑽、銘㈣、 的雜’以&amp;為主齡㈣鍍由料紐優異,是較佳 當含有Μ時,耐街生或與谭料的密合性優異,是 無電解電鍍膜的膜厚並無特別限定。具體而言, ιομηι’更宜為1〜5μιη左右。 . 八用電鍍步驟,在絶緣層G20表面殘留有電鍍觸媒G25的部 :^析出無電解電鍍膜。如是,便可只在欲形成第2電路G20的 =上形成精度良好的導電層。另—方面,亦可防止在未形成電路 =⑽、的部分上析出無電解電鍵膜。因此,即使在狹窄的節距 間隔形成複數條線寬狹小的細微配線G26a,也不會在隣接配線 G26:之間殘留多餘的電鍍膜。因此,能夠防止短路或遷移等問題 、該等電鍍步驟,便可在絶緣層G20的表面的經過雷射加 工的部,上析出無電解電鍍膜。藉此,在絶緣層G20的表面上形 ^新的第2電路G26,同時該絶緣層G20的第2電路G26與電路 土板G10的第1電路G11透過層間連接用孔G21或金屬柱G22在 層間連接。 % L過或重複該等步驟’便可如圖19所示的,製造出在絶緣層 ^2〇 =表面上具有第2電路G26的多層電路基板G1。然後,在^ 夕層電路基板G1中,在各層中電氣電路Gil、G26與層間連接用 孔G21相互連接,同時各層的電氣電路G11、G26之間透過層間連 111 201146113 接用孔G21在層間連接。 若利用本實施態樣所説明之製造方法,藉由調整電路圖 相對於絶緣層G2G的深度’便可自由調整第2電路必的&amp;厚 哲可將第2電路⑽形成在絶緣層G20陳深的部分, 或疋將複數第2電路G26形成在彼此深度不同的位置上 部分碱第2電路⑽,便可軸厚度較厚 g路G26膜厚轉的電路剖面積較大,故具有較高的強度與電 施‘ί樣的製造方法中,由於利用形成電路圖案G24之 ^屬形成步驟與金屬柱形成步驟,預先用電 ίΪ導而能夠花時間充分進行層間連接用孔G21的金屬填充成 接用孔⑼的金屬填充時,由於電路圖案I 不會從電關案側成長出來,可防止孔隙產 屬填ίίΓ然後,由於在層間連接用孔G21的金 皮卿成步驟、電路_形成步驟、觸媒披 的導體,故二以及電鍍步驟,以加成法形成第2電路G26 圖案G24朗間連接以上内容,即使細微電路 利用增層法糊製造㈣層電路^^1’。也㈣適#制加成法, 杈樣的製造方法中’在電路圖案形成步驟,宜以金屬 參絲如的对戦電路圖案 ^ 2 ta^〇26 柱G22的頂部會插入墊部G ^ 參;^圖^)。金屬 墊部G26b從絶緣#㈣體層利用錯疋效果有效防止 重量的塾部άί兄洛’進而製得能夠充分承受安裝零件之 在本實施態樣的製造方法中,於金 112 201146113 孔G21填充電鍍金屬。由於導體亦即電氣電路⑴丨被_作為無 電解電鍍的電鍍核,故簡合理形成金屬柱G22。 ’、’、 另外,在本貫施態樣的製造方法中,於金屬柱形成步驟,在咆 ,層G20的表面、層間連接用孔⑵的内以及露出之第】電 氣電路G11的表面上披覆電鍍觸媒G25,在對電鍍觸媒彼覆部實施 無電解電叙後,再實施電解電鍍,藉此用紐金屬填充層間連接 用^ G21,之後’除去在包含絶緣層G2〇的表面在内的絶緣層G2〇 的外表賴析it;的魏金屬。由於在包含絶緣層⑽的表面在内 的絶緣層G2G的外表賴形成之無電㈣鍍層被糊當作電解電 鑛所必須^給電層’故可合理形成金屬柱G22。 在本貫施態樣的製造方法中’樹脂皮膜G23宜為可被既定液 體溶解,膨潤而從絶緣層G2G溶解除去或讎除去的樹脂皮膜。 亥等樹月旨皮膜G23,便可輕易而順利地從、絶緣層G2〇的表面將 巧月:皮膜G2^:^解除去或剝離除去。若在除去樹脂皮膜G23時樹 月曰皮膜G23 ^壞的話’彼覆在該樹脂皮膜⑼上的電鑛觸媒G25 =飛散’、飛散之電鍍觸媒G25再:欠披覆到、絶緣層G2〇上會在該部 分上形成多餘的電鍍膜。由於能夠輕易而順利地從絶緣層G如表 面將樹脂皮膜G23除去’故可防止該等問題。 本實施態樣的製造方法所製造的多層電路基板ω,即使細微 案G24與層間連接用孔G21混合存在,對層間連接用孔⑽ 的金屬填充也能夠充分而順利地進行,電路G11、G26與層間連接 用孔G21的連接情況良好,且能夠防止電路部分形成多餘的導體, =製得不易產生短路等問題的多層電路基板G卜因此,能夠適 备應用力:成法,利用增層法順利製造出多層電路基板G1。結果, 便可製得形成有形狀精度很高之電氣電路G26的多層電路基板 G1。使用該等多層電路基板〇1的製造方法’便能夠製造出可用於 配線G26a的寬度以及配線G26a的間隔很狹小的IC基板、行動電 活用印刷配線板、立體電路基板等用途的多層電路基板Q1。 /外,在多層電路基板的製造方法中,使樹脂皮膜G23含有 螢光性物質,便可在上述越除去㈣之後,對齡縣面照射紫 113 201146113 外光或近紫外光,利用螢光性物質的發光檢查皮膜是否徹底除去。 =實施態樣的多層電路基板的製造方法中’可形成配線G26a的. 線寬以及配線G26a的間隔非常細小的金屬配線G26a。在此情況 下、’ I能會有例如互相隣接之金屬配線G26a之間的樹脂皮膜G23 無法完全除去喊留下來的問題。當金屬配線G26a之 皮膜G23時,會在該部分上形成電鍍膜,導致遷移或短路等問題。 ^匕時Μ吏樹脂皮膜G23含有螢光性物質,便可在皮膜除去步驟之 後,對皮膜除去面照射既定發光源,使皮膜G23殘留部分 ^性物質崎光,藉此檢Μ細是碰紐去或皮縣徹底除去 的位置。 - 本檢査步驟使狀樹脂皮膜G23所含有的螢光性物f,只要 既定光源照射會顯現丨發緋時可,其他並無制限定。且體 如:Fluoresceine、Eosine、Pyronine G 等。 八 r ^用檢測出螢光性物質的發光的部分,即為殘留樹 月曰皮膜G23的部分。因此,除去檢測出發光的部分,便可防 =形成於該部分上。藉此’便可防止遷移或短料問題的發生於 〔第4—2實施態樣〕 —參照圖2卜說明本發明的第4—2實施態樣。另外,盘第4—】 樣相同或相#的構成要件使用相同符號,省略其説明,並增 加第4—2貝轭態樣的特徵部分的説明。 金屬ί ί f ίΐ態樣’如圖21D所示的,在金屬柱形成步驟中, C中if 的頂部未從電路圖案G24的底面露出 ^屬挺G22 如圖训所示的,在電路随形成步驟中, 不從電路圖_4的底面露出或突出的方式 I成電路圖案G24。結果,如圖211所示的,在電鑛步驟中,便可 114 201146113 防止形成於金屬柱G22頂部上的導體層從絶緣層g .面)突出,進而消除或減少在絶緣層⑽的電路G26步成^ f .生的凹凸。因此,即使堆疊數增加,在上所產 也不會變大,而能夠形成細微電路。 7 產生之凹凸 或者,亦可如第4-!實施態樣的圖趟所 成步驟,使金雜G22成長到絶緣層⑽ 之=柱^ 用例如祕刻等方式將金屬柱G22 ^度之$ = 底面的位置,藉此’如圖21F所千&amp;到電路圖案G24的 能夠以金屬柱G22的頂部未從電路0幸f案形成步驟中,便 成電路圖案G24。如是頁圖面突出的方式形 電關案⑽的底破出之目的。 旯説明本發明的第4-3實施態樣。另外,盘第4—! 樣相同或相當的構成要件使用相同符 省略 第㈠實施態樣的特徵部分的説明。 月4略&amp;加 该第4 —3實施態樣,如圖22F所示 二厚度相同深度的溝=== ⑽的i面與路圖案 電鍍步驟中,第2雷技班、、°果如圖221所不的’在 二然而’:使細微電路圖案^與層= 層用== 狀 =夠適當應用加成法,儀增層法 ^^, 對於該等本發明之技術特徵沒有任何影層電路基板⑴, 〔第4—4實施態樣〕 外iff 25説明本發明的第4 —4實施態樣。另外,盘第4-】 ί夕成要件使用相同符號’省略其詳細説明。 力广嚙略材科的說明,只說明步驟。 . &lt;電路基板準備步驟&gt; •已形先,如圖25A所示的 乐電孔電路G11的電路基板⑽(電路基板準備步驟) 115 201146113 &lt;絶緣層形成步驟&gt; ,如圖25B所不的,在已形成第1電路G11的電路基板 的表面(電路形成面)上形成絶緣層G2〇(絶緣層形成步 &lt;開孔形成步驟&gt; 接著,如圖25C所示的’從絶緣層G2〇的表面(外表面)進行雷 工g在絶緣層⑽上形成賴連接祕G21(開孔形成步驟)。 ^,層間連接用孔⑼到達電路基板⑽的第】電路⑴ s亥第1電路G11露出。 &lt;金屬柱形成步驟&gt; 接著,如圖25D所示的,從露出之第丨電路〇11,利用無電解 ,鑛或電解電錄’用電鍍金屬填充該層間連孔G2卜在層間連 接用孔G21中形成金屬柱G22(金屬柱形成步驟)。 該第4—4實施態樣,如圖25D所示的,在金屬柱形成步驟中, 土柱〇22未成長到絶緣層G20的表面的高度。電鍍金屬填充到 未到達在電路圖案形成步驟中所形成之電路圖案G24的底面的位 置。 &lt;皮膜形成步驟&gt; 接著,如圖25E所示的,在絶緣層G20的外表面以及金屬柱 G22的頂部形成樹脂皮膜G23(皮膜形成步驟)。 &lt;電路圖案形成步驟&gt; 接著’如圖25F所示的,從樹脂皮膜G23的表面(外表面)形成 具有至少該樹脂皮膜G23的厚度以上的既定深度以及既定形狀的 溝槽及/或開孔以形成電路圖案G24(電路圖案形成步驟)。電路圖 案G24可利用雷射加工、切削加工或壓型加工等方式形成。 5亥第4—4貫施態樣,如圖25F的符號A所示的,在電路圖案 形成步驟中’於金屬柱G22之上殘留樹脂皮膜G23。亦即,由於在 金屬柱形成步驟中金屬柱G22未成長到電路圖案G24的底面的位 置的關係而殘留下來。該殘留之樹脂皮膜G23會在之後的皮膜除 去步驟中被除去。藉此’在該電路圖案形成步驟中,以金屬柱G22 的頂部不會從電路圖案G24的底面突出的方式形成電路圖案 116 201146113 rnmG23 ^卩在將^細G23 ___24的絲更罙^ 纖的物成 4男苑態樣中任一種方式均可。 你 &lt;觸媒披覆步驟&gt; 接著’如圖25G所示的,在樹脂古胺认主 ® * 〇24 〇25(^t^ &lt;皮膜除去步驟&gt; 更後退之錄^ 1卩在比f關案G24的底面 &lt;電鍍步驟&gt; ,著’如圖251所示的,在絶緣層G2〇上實 在殘留電_媒肪的電路_ G24的部分及= ί =分上形成無電解電舰,藉此在該絶緣層=^=的2 以mtf 22的露出部分上未殘留電鍍觸媒G25, 屬為雜使無電解紐卿成並成長。而且, 桃緣層G2G的弟2電路G26與電路基板⑽ 過該金屬柱G22在層間連接(電鍍步驟)。 透 以八=貫施態樣’如81 25F所示的,在電路圖案形成步驟, Si ^ =部未從㈤4的底面突_彳#彡@ 去步驟’除她旨越,使金屬柱 比電路圖案G24的底面更後退的位置露出。結果,如 i /斤不的’可防止形成於金屬柱G22的頂部之上的導體層從絶 緣^ G20的外表面突出,進而消除並減少在絶緣層⑽的電路⑽ 幵&gt;成面上所產生的凹凸。 更詳而言之,如圖26放大所示的,當絶緣層⑽的外表面到 117 201146113 電路圖案G24的底面的距離(亦即電路圖案G24的深度)設為沿, 電路圖案G24的底面到金屬柱G22的頂部的距離(亦即金屬柱G22 ⑽的㈣㈣糊設為d2時,〇&lt; 如疋,由於當絶緣層G2〇的外表面到電路圖案〇24的底面的 路圖案G24的深度)設為d卜電路圖案G24的底面到金屬 柱G22的頂部的距離(後退的深度)設為汜。,故(4) Film removal step 'The electric ore catalyst 25 can be left on the surface of the insulating layer G20 on which the circuit pattern G24 is formed. On the other hand, the electric clock _ G25, which is coated on the tree J, is removed from the absolute layer (10) together with the resin film. Here, from the electric ore catalyst G2 that prevents the self-insulating layer G2 from being removed, the Wei edge is again coated; | G2G on the silk surface, the tree skin, the = ^ machine fine G23 mineral wire _, as long as The base material G10, the insulating layer (10) and the electric sputum 〇25 are substantially decomposed or the tree smear film G23 is turned or the swelled coating is removed from the insulation: the degree of removal can be broken, and the other wire values are fixed. 109 201146113 Liquid, It is preferable to select according to the kind, thickness, etc. of the resin film G23. Specifically, for example, when a photocurable epoxy resin is used as the photoresist resin, an organic solvent or a photoresist removal agent of an alkaline aqueous solution or the like can be used. In addition, for example, when the resin film G23 is made of an elastomer such as a di-seal elastomer, an acrylic elastomer, or a polyester-based elastomer, or when the resin film G23 has at least one polymerization in the molecule (8) a monomer of at least one of a carboxylic acid or an acid anhydride-containing carboxylic acid or an acid anhydride, and (9) a polymer obtained by polymerizing at least one monomer polymerizable with the (8) monomer, or a resin containing the polymer resin In the case of the composition, when it is formed of the above-mentioned carboxyl group-containing acrylic resin, an aqueous test solution such as a sodium hydroxide aqueous solution having a concentration of about 丨1% to about 〇% is preferably used. Further, when an electroplating process which is treated under the acidic conditions described above is used in the catalyst coating step, the resin film G23 is swollen under the acidic conditions under a swelling condition of 6 〇% or less, and under 40%, under the test conditions. An elastomer having a degree of 5% or more, such as a di-semi-elastic elastomeric elastomer and a polyacetate-based elastomer, or a dicarboxylic acid having at least one polymerizable unsaturated group in the a-knife f Or at least 1 octagonal monomer of an acid anhydride and at least one or more kinds of monomers which can be polymerized with the monomer, or a polym'j complex or a tree-containing polymer The aforementioned Wei group-diluted acid 'tetra(4) lipid is formed. The resin film has a 1 value of 11 to 14 Å, preferably an alkaline aqueous solution having a enthalpy of 12 to 14, for example, a sodium oxynitride having a concentration of two right, which is easily dissolved or swollen, and is removed by dissolution = i. S outside the 'in order to improve the solubility or susceptibility' can also be used in the impregnation of the wave. In addition, it can be peeled off with light force as needed. In the method of removing the resin film G23, for example, the resin film G23 is immersed, and the layer G2 〇 is immersed in the liquid for removing the resin film for a predetermined period of time and the outside of the column. Removability, when it is impregnated, when it is difficult to peel off or dissolve and remove, it may be required to &lt;Electric money step&gt; "Improve the electroless bond to the insulating layer G20" as shown in Fig. 201 Residual electric ore catalyst G25 on the part of the circuit pattern G24 and the exposure of the metal column G22 110 201146113 G2 ° 2 竑, & 使 亥 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 ° 绝缘 绝缘 绝缘 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 电路 ί ί Through the metal column G22, the fine-grained step G' method can be used to form a part of the on-board circuit _ G24, which can be partially coated with an electroplating catalyst (10). Aluminium (a metal of Aim electrolysis money) such as copper (CU), nickel (10), Ming (four), miscellaneous '& primary age (four) plating is excellent by the material, it is better to be resistant to street or The adhesion to the tan material is excellent, and the film thickness of the electroless plating film is not particularly limited. In terms of body, ιομηι' is preferably about 1 to 5 μm. In the eight-electroplating step, the portion of the plating layer G25 remains on the surface of the insulating layer G20: an electroless plating film is deposited. If so, it can be formed only 2, the conductive layer of the circuit G20 is formed with high precision. On the other hand, it is also possible to prevent the electroless bond film from being deposited on the portion where the circuit = (10) is not formed. Therefore, even a plurality of line widths are formed at a narrow pitch interval. The narrow fine wiring G26a does not leave an excess plating film between the adjacent wirings G26: Therefore, it is possible to prevent the problems such as short-circuiting or migration, and the laser plating process can be performed on the surface of the insulating layer G20. The electroless plating film is deposited on the surface, whereby a new second circuit G26 is formed on the surface of the insulating layer G20, and the second circuit G26 of the insulating layer G20 and the first circuit G11 of the circuit board G10 are transmitted. The interlayer connection hole G21 or the metal pillar G22 is connected between the layers. % L passes or repeats the steps ', as shown in FIG. 19, a multilayer circuit having the second circuit G26 on the surface of the insulating layer 2 is formed. Substrate G1. Then, at ^ In the circuit board G1, the electric circuits Gil and G26 and the interlayer connection hole G21 are connected to each other in each layer, and the electrical circuits G11 and G26 of the respective layers are connected to each other through the interlayer connection 111 201146113 access hole G21. In the manufacturing method described in the embodiment, the second circuit can be freely adjusted by adjusting the depth of the circuit diagram with respect to the insulating layer G2G. The second circuit (10) can be formed on the portion of the insulating layer G20. Or the second circuit G26 is formed in a portion of the base second circuit (10) at a different depth from each other, so that the circuit thickness of the thicker g road G26 is larger, so that the circuit has a larger strength and power. In the manufacturing method of the present invention, the metal forming step and the metal pillar forming step of forming the circuit pattern G24 can be used in advance to electrically fill the metal for the interlayer connection hole G21 into the contact hole (9). When the metal is filled, since the circuit pattern I does not grow from the side of the electric gate, it is possible to prevent the pores from being filled, and then, due to the step of connecting the holes G21 between the layers, the circuit is formed. Step conductor Phi catalyst, it is two and a plating step, is connected to the above additive method between the first and second circuit pattern G26 G24 Lang, even slight build-up method using the circuit for producing the paste layer iv ^^ circuit 1 '. Also (4) suitable for the addition method, in the manufacturing method of the sample, in the circuit pattern forming step, it is preferable to insert the pad G ^ 顶部 at the top of the column G22 of the metal 丝 如 如 如 26 ;^图^). In the manufacturing method of the present embodiment, the metal pad portion G26b is used in the manufacturing method of the present embodiment, which is capable of sufficiently supporting the mounting part by utilizing the erroneous effect of the insulating layer (#4) body layer, and is capable of sufficiently supporting the mounting part, in the gold 112 201146113 hole G21 filling plating metal. Since the conductor, that is, the electric circuit (1) is used as the electroplating core for electroless plating, the metal post G22 is simply formed. In addition, in the manufacturing method of the present embodiment, in the step of forming the metal pillar, the surface of the layer G20, the inside of the interlayer connection hole (2), and the surface of the exposed first electric circuit G11 are covered. The plating catalyst G25 is coated, and after electroless plating is applied to the plating catalyst, the electrolytic plating is performed, thereby filling the interlayer connection with G-21, and then removing the surface of the insulating layer G2. The outer layer of the insulating layer G2 赖 赖 it ;; Since the electroless (four) plating layer formed on the outer surface of the insulating layer G2G including the surface of the insulating layer (10) is used as the electrolysis layer, the metal pillar G22 can be formed reasonably. In the production method of the present embodiment, the resin film G23 is preferably a resin film which can be dissolved by a predetermined liquid and swelled to be removed or removed from the insulating layer G2G. The tree-like film G23, such as Hai, can be easily and smoothly removed from the surface of the insulating layer G2〇: the film G2^:^ is removed or peeled off. When the resin film G23 is removed when the resin film G23 is removed, the electro-mineral catalyst G25 on the resin film (9) is scattered, and the plated catalyst G25 is scattered: the coating is not covered, and the insulating layer G2 An excess plating film is formed on the portion of the crucible. Since the resin film G23 can be easily and smoothly removed from the insulating layer G as described above, such problems can be prevented. In the multilayer circuit board ω manufactured by the manufacturing method of the present embodiment, even if the fine case G24 and the interlayer connection hole G21 are mixed, the metal filling of the interlayer connection hole (10) can be sufficiently and smoothly performed, and the circuits G11 and G26 are The connection between the interlayer connection holes G21 is good, and it is possible to prevent the circuit portion from forming an unnecessary conductor. The multilayer circuit board G which is less likely to cause a short circuit or the like can be used. Therefore, the application force can be suitably applied: the method is successful, and the build-up method is used smoothly. A multilayer circuit substrate G1 is manufactured. As a result, the multilayer circuit substrate G1 on which the electric circuit G26 having a high shape accuracy is formed can be obtained. By using the method of manufacturing the multilayer circuit board 〇1, it is possible to manufacture a multilayer circuit board Q1 which can be used for applications such as an IC board, a mobile electric printed wiring board, and a three-dimensional circuit board, which have a narrow width of the wiring G26a and a small gap between the wirings G26a. . In addition, in the method of manufacturing a multilayer circuit board, the resin film G23 is made to contain a fluorescent substance, and after the above (4) is removed, the surface of the prefecture is irradiated with purple 113 201146113 external light or near-ultraviolet light, and the fluorescence is utilized. The luminescence of the substance checks whether the film is completely removed. In the method of manufacturing a multilayer circuit board of the embodiment, the metal line G26a having a very small interval between the line width and the wiring G26a can be formed. In this case, there is a problem that the resin film G23 between the metal wires G26a adjacent to each other, for example, cannot be completely removed. When the film G23 of the metal wiring G26a is formed, a plating film is formed on the portion, causing problems such as migration or short-circuit. ^ When the resin film G23 contains a fluorescent substance, the film removal surface can be irradiated with a predetermined light source after the film removal step, so that the film G23 remains partially saturated, thereby checking the fineness Go to the location where Pico County is completely removed. - In the present inspection step, the fluorescent material f contained in the resin film G23 may be formed by a predetermined light source, and the other is not limited. And such as: Fluoresceine, Eosine, Pyronine G and so on. The portion where the luminescent portion of the fluorescent substance is detected is the portion of the residual tree sapphire film G23. Therefore, by removing the portion where the light is detected, it is possible to prevent the formation of the portion. By this, it is possible to prevent the occurrence of migration or short-term problems from occurring in the [fourth embodiment of the second embodiment]. The fourth to second embodiments of the present invention will be described with reference to Fig. 2 . In addition, the same reference numerals are used for the constituent elements of the same or the same phase of the disk, and the description thereof is omitted, and the description of the characteristic portion of the fourth to second yoke is added. Metal ί ί f ΐ ΐ ' As shown in Fig. 21D, in the metal pillar forming step, the top of if in C is not exposed from the bottom surface of the circuit pattern G24 ^ is quite G22 as shown in the training, in the circuit with the formation In the step, the circuit pattern G24 is formed without being exposed or protruded from the bottom surface of the circuit diagram_4. As a result, as shown in FIG. 211, in the electric ore step, 114 201146113 can prevent the conductor layer formed on the top of the metal post G22 from protruding from the insulating layer g, thereby eliminating or reducing the circuit G26 in the insulating layer (10). Step into ^ f. Raw bumps. Therefore, even if the number of stacks is increased, the above-produced product does not become large, and a fine circuit can be formed. 7 The resulting bumps or the steps of the pattern of the 4-th implementation can be used to grow the gold hybrid G22 to the insulating layer (10) = column ^, for example, by secret engraving, etc. = the position of the bottom surface, whereby the circuit pattern G24 is formed in the step of forming the circuit pattern G24 as shown in Fig. 21F to the circuit pattern G24 without the top of the metal pillar G22 being formed from the circuit. If the page is highlighted, the shape of the electric gate (10) is broken. The fourth embodiment of the present invention will be described. In addition, the same or equivalent constituent elements of the disk are the same as those of the first embodiment. 4th and 3rd embodiment, as shown in Fig. 22F, the groove of the same depth and the groove of the same depth === (10) in the i-face and road pattern plating step, the second thunder class, Figure 221 does not have 'in the second one': the fine circuit pattern ^ and the layer = layer = = shape = enough to apply the additive method, the instrument layering method ^ ^, there is no shadow for the technical features of the present invention Layer circuit board (1), [fourth to fourth embodiment] The outer iff 25 illustrates the fourth to fourth embodiments of the present invention. In addition, the fourth symbol of the disk is denoted by the same reference numeral, and the detailed description thereof will be omitted. The description of Liguang's abbreviated section only explains the steps. &lt;Circuit Substrate Preparation Step&gt; • The circuit board (10) of the musical cell circuit G11 shown in Fig. 25A (circuit substrate preparation step) 115 201146113 &lt;insulating layer forming step&gt;, as shown in Fig. 25B Otherwise, the insulating layer G2 is formed on the surface (circuit forming surface) of the circuit substrate on which the first circuit G11 has been formed (insulating layer forming step &lt; opening forming step &gt; Next, 'inserting as shown in Fig. 25C' The surface (outer surface) of the layer G2 is subjected to a laser beam G21 (opening forming step) on the insulating layer (10). ^, the interlayer connection hole (9) reaches the circuit board (10) of the first circuit (1) The circuit G11 is exposed. &lt;Metal column forming step&gt; Next, as shown in Fig. 25D, the exposed interlayer hole G2 is filled with electroplated metal from the exposed third circuit block 11 by electroless, ore or electrolytic recording. A metal pillar G22 is formed in the interlayer connection hole G21 (metal pillar forming step). In the fourth to fourth embodiment, as shown in FIG. 25D, in the metal pillar forming step, the soil pillar 22 does not grow to the insulating layer. The height of the surface of the G20. The plating metal is filled to the unreached in the circuit The position of the bottom surface of the circuit pattern G24 formed in the step of forming the film. <Thin film forming step> Next, as shown in Fig. 25E, a resin film G23 (film) is formed on the outer surface of the insulating layer G20 and the top of the metal post G22. [Formation step). &lt;Circuit pattern forming step&gt; Next, as shown in Fig. 25F, a groove having a predetermined depth or more and a predetermined shape of at least the thickness of the resin film G23 is formed from the surface (outer surface) of the resin film G23. And / or opening a hole to form a circuit pattern G24 (circuit pattern forming step). The circuit pattern G24 can be formed by laser processing, cutting processing or profile processing, etc. 5 Hai 4th-4th aspect, as shown in Figure 25F The resin film G23 remains on the metal post G22 in the circuit pattern forming step as indicated by the symbol A. That is, the relationship of the position where the metal post G22 does not grow to the bottom surface of the circuit pattern G24 in the metal post forming step. And remaining, the residual resin film G23 is removed in the subsequent film removing step. Thus, in the circuit pattern forming step, the top of the metal column G22 does not The bottom surface of the road pattern G24 protrudes to form a circuit pattern 116 201146113 rnmG23 ^ 卩 将 ^ G G 23 23 23 G G G G G G G G G G G 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 触 触 触 触 触 触 触 触 触 触 触Step &gt; Next 'as shown in Fig. 25G, in the resin sulphate lord® * 〇 24 〇 25 (^t^ &lt; film removal step > more retracted record ^ 1 卩 in the ratio of the bottom surface of G24 &lt;Electroplating step&gt;, as shown in Fig. 251, an electroless electric ship is formed on the portion of the circuit _ G24 in which the electric _ _ _ _ _ _ _ _ _ _ _ _ _ 2 of the insulating layer = ^ = The plating catalyst G25 is not left on the exposed portion of the mtf 22, and it is a kind of miscellaneous chemical growth. Further, the second circuit G26 of the peach edge layer G2G and the circuit board (10) are connected to each other via the metal post G22 (electroplating step). Through the eight-consistency pattern, as shown in 81 25F, in the circuit pattern forming step, the Si ^ = portion does not protrude from the bottom surface of the (five) 4 _ 彳 彡 去 去 去 去 去 去 去 去 去 去 去 去 去 去 去 她 她 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属The bottom surface of the pattern G24 is exposed at a position further backward. As a result, if i/kg does not prevent the conductor layer formed on the top of the metal post G22 from protruding from the outer surface of the insulating layer G20, thereby eliminating and reducing the circuit (10) on the insulating layer (10) The resulting bumps. More specifically, as shown in an enlarged view of FIG. 26, when the outer surface of the insulating layer (10) reaches the bottom surface of the circuit pattern G24 of 117 201146113 (that is, the depth of the circuit pattern G24), the bottom surface of the circuit pattern G24 is set to The distance from the top of the metal post G22 (that is, the (four) (four) paste of the metal post G22 (10) is set to d2, 〇 &lt; as 疋, due to the depth of the road pattern G24 from the outer surface of the insulating layer G2〇 to the bottom surface of the circuit pattern 〇24 The distance (reverse depth) from the bottom surface of the d-circuit pattern G24 to the top of the metal post G22 is set to 汜. Therefore

Ifϊίί 2度^比電路圖案G24的深度dl更小。因此,電路⑽ =的導,成與層間連接用孔G21的金屬填充能夠充分而順利 電路G26與層間連接用孔G21的連接情況十分良好。 用、盖減t應^的値或犯的値,或是電路圖案G24的配線G26a 用,槽的寬度或雜㈣部(遍用_孔的尺寸別、等,除 &lt; 2 „0〇/〇之外’亦可為〇〈汜$以,%或〇〈汜髓等。 G24二屬柱气成步驟中,電鍍金屬填充到未到達電路圖案 的頂部舍〜’藉此,在電路圖案形成步驟巾’金屬柱G22 Ψ 矿在比電路圖案G24的底面更後退之位置露 ΐ成及細除去步驟之前的金屬柱 的底^突ilU二f易達到金屬柱G22的頂部不從f路圖案G24 況下G20的表面挖掘電路圖案G24的情 相^々樣係金屬柱G22的頂部與絶緣層G20的表面 電路G2^底面3高^金屬柱G22的頂部從 if (t^iG22 的頂部未達電Μ L祕,第貫施態樣係金屬柱肪 路圖案G24的底面突出)的態;^面的兩度(金屬柱G22的頂部未從電 〔Ϊ 實施態樣的追加説明〕 接者,參照圖27,更詳細説明第4 — 1實施態樣的(C)開孔形成 118 201146113 步驟、(E)皮膜形成步驟、(G)觸媒披覆步驟。 • 如第4一1實施態樣的金屬柱形成步驟所説明的,金屬柱G22 . 亦可為圓錐台狀或角錐台狀。圖27C,係表示在第4一1實施態樣 的(C)開孔形成步驟中,形成具備絶緣層G2〇的表面侧的徑長比第 1電路G11側的徑長更大之形狀的層間連接用孔G21的情況。因 ,’如® 27E所示的,在第4-1實施態樣的⑻皮膜形成步驟中, ^絶緣層G2〇的表面以及金屬柱ο。的頂部形成樹脂皮膜〇23的 制連接用孔⑽巾所填充之金屬柱G22也會形成絶緣 即,金屬長更大的形狀。亦 膜27Ε的箭號所示的’在電路圖案形成步驟對樹脂皮 才表面照射雷射時’金屬柱G22的粗徑部會形成遮蔽,而 靖產生絶緣層G2G未除去之部分。結果,如圖 觸媒㈣^4—1實施態樣的⑹觸媒披覆步驟中,於將電鍍 披覆到絶緣二〇:ί 09 ϋ,在金屬柱G22的侧面未披覆電鍍觸媒G25,故在金屬柱 ^ tam ίί f f f022 ί 然,如圖201所示的,在金屬==:::: 的底面突出的金屬^ 2 :觸媒G25難以覆蓋到從電路圖案G24 119 201146113 —4實施態樣的情況下,即使是上部比下部更粗的金屬柱G22,也 不會有金屬枉G22與第2電氣電路G26連接不良的問題。 〔第5實施態樣〕 本發明更係關於一種埋設由導電體所構成之電路層而形成的 電路基板。 以往’埋設由導電體所構成之電路層的電路基板,可利用CMp (Chemical Mechanical Polish ;化學機械研磨)法形成(例如日本特 2000—49162 號公報)。 一圖33表示CMP法的一個實施例。CMp法,首先,如圖33(a) 所示的,在絶緣基材K1的表面上利用雷射加工形成電路溝槽幻(溝 槽部)。接著,如(B)所示的,在包含該電路溝槽K3在内的絶緣基 材κι的整個表面上形成無電解電鍍膜Κ6。然後,如所示的: 對該無電解電鍍膜K6施加電壓,在絶緣基材K1的整個表面上形 成電解電鍍膜K2卜之後,如⑼所示的,制研磨器K22將電 電錢膜Κ21以及無電解電鍍膜Κ6超出絶緣基材K1表面的部 磨除去,使絶緣基材K1的表面露出。 利用以上步驟,便可製得埋設有電路層K13的電路基板 在,電路基板Κ10上,將電路層Κ13之間的距離設定為例如 〜30μΓΠ左右的寬度,便可製得高精度的電路基板⑽。 然而,以上述方式形成之電路基板K1〇,如圖3到 ^由:對J含電路溝槽Κ3在内的絶緣基㈣的以丄鑛 f '並將夕餘的電鑛_磨除去, g 然後,如圖34(C)所示的,由於研磨 雷j膜施加之研磨力不同,故電鍵膜被除去所形成之 衣面上路出,另外,由於露出之填料Kll會因為 故表面的填料K11會無法維持原來的形狀。: 路出的填科κη粉碎掉落的機率變高,在之後的步财可能會^ 120 201146113 „而造成污染。另外,由於對絶緣基材K1的表面進行研磨, 欠^能會以露出表面之填料K11為起點而產生微小裂縫。另外,由 表面之填料K11被破壞,故熱膨脹性或強度等基材特性可能 =,_製造埋設有由導電體所構成之電路層的電路基板的 二、他方法,例如習知的轉印法。轉印法,係將表面形成有 =離材料以電路層表面對向絶緣基材表面的方式貼合錢緣又 將娜材_離,使電路層轉印並埋入絶^基 ,而,由於轉印法係將電路層推壓埋設於絶緣基材的, 帝:係以與絶緣基材的外表面的樹脂覆膜接觸的方式形成,合有 緣基材的密合性較低的問題。關於提高密合性的方g 的°底面v:理考CZ處理可對設於剝離材料之金屬箔的表面(電路層 ,底面)進仃處理,雖然能夠提高電路層底面的密合性 =側面贿合性,絲形成寬度狹小之祕層 二 轉印法-般而言電路層的深度均 ^式形成味度不同的電路層。另外,轉印法所形成之g路層其電路 ====短有其極限’故無法製得電路層之間“離很短 ^1在_# ㈣偷, 法,例如減去法、累加法等方法形成,故很難形 ^ 3酉=。再者即使能夠形成細微配線,若剥離材料μ 3 &amp;度太強,便無法轉印到絶緣基材上,而產二曰 Γί度太弱,_離材料的$ 電困中難==:微因,剝離材料與 声的密Α面藉ρ丨^ Λ 、 、’' W則剝離材料與電路 ^的電;層轉印到絶緣^控制就會變得更難,更無法將細微配 另外,在使絶緣基材多層化的情況下,若採用轉印法,則由於 121 201146113 並非在絶緣紐上形成電路,而是預先在剝離材料上形成電路,然 後轉印到絶緣基板的兩面上’絲難在層間鮮電關案的, 因此很難以高精度對準位置。 •ΐ?於亡述問題’本發明之目的在於提供一種即使填料被破壞 出表面紐雛也不會降低’電路層的密合錄高的高精度電 路基板。 亦,’本發明的第5的實施態樣包含以下技術内容。 —種在_含有填料之鑛所形成的絶緣基材 為表料ίϊ所構成之電路層而形成的電路基板,其特徵 基材的接觸面會順著填料職接觸面的突出形狀Ϊ形^凹 ^求項5-2.如請求項η所記載之電路基板,其中 絶緣基材的接觸面會與從該接觸面突出的至少—部份的填 請求項5 —3.如請求項5_丨或5—2 中,j絶緣基材的露出表面填料未露出。 土 ,/、 請求項5—4.如請求項5_1〜5 —3中任丨 板,,項所記載之電路基 板,iT^5—6.如請求項5 —丨〜5—5中任1項所記载之電路A 高低差路層的露出表面很平坦且在與絶緣基材的分界線上i 未被二t1 Ϊ發明,由於絶緣基材的露出表面以填料 材,故能夠防止^料、^^維持形狀的方式將填料填充於絶緣基 低。另外,由於電熱膨服性或強度等的基材特性降 形成凹凸形狀,ί路;材的接觸面順著填料的突出形狀 電路層與絶緣基材以凹凸狀組合接觸,故能夠提高 122 201146113 電路層與絶緣基材的密合性。 而命=^求項5—2的發明’由於電路層在與絶緣基材的接觸 2,使電路層不透過樹脂層而是直接與絶緣基材 ,觸丄故可更進-步提高電路層的密合性々外,由於電路層 ss===;= 用雷5:4的發明,絶緣基材的與電路層的接觸面利 該接觸面使填料突出,讓細面形成凹凸形 ’若用方式製得密合性較高的高精度電路基板。 扭,γΓ^明’藉由使電路層的露出表面很平 二古似特性’同時消除在電路層與絶緣基材之分界線上 板间-’並使電路基板很平坦’進而製得很薄且很平滑的電路基 的立=8。=發T之電路基板請的實施祕的—個實施例 基iK1辭面之__成的絶緣 使用呈右H駒4:1 +〒體所構成的電路層103。填料K11可 ί路的矣而1不的態樣中,係使用球狀的填料κη。 κΐ3的4 :出表面)形成平坦表面。亦即,電路層 幻3 的寬度W方域乎祕。電路層 中,電路&gt; K1 &amp; = &amp;氣特性便可提高。然後,在圖示的態樣 電路層K13的表面與絶緣基材K1的表面沒有高低差。藉此電 123 201146113 路基板K1G的整個表祕平坦,如是便可製躲薄膽平 路基板K10。 絶緣基材K1的露出表面,與用CMp法形成的情況不同 料K11不會被破壞。亦即,在用CMp法形成的情況下,會形如 圖34所示的填料K11被破壞且露出的絶緣基材K1,然而圖2 不之電巧基板κιο,在絶緣基材K1的露出表面附近的填料κ ίϊίΐΐΐΐ持該雜後,在絶緣紐K1的Μ表面,填 枓Κ11不會路出’具體而言’未含有填料K11的表面樹脂層奶 形成絶緣基材K1的露出表面。表面樹脂層K12係由未含有填 =1的樹脂成分所構成,其戦覆纽緣基材K1賴個表面的 膜。在此’樹脂成分係指形成絶緣基材⑵的填料K11以外的H 的’除了樹脂之外’還包含硬化劑或分制等成分。在圖 2,表面树脂層係比線更靠表面側(外侧〉的膜層。由於 樣面樹脂層K12覆蓋填料KU,故能夠填 _ 並產生填料或微小魏關題。 將路出表面 κι =路ίΛ13的埋設於絶緣基材κι的表面(與絶緣基材 ^ ^ 2,填料K11的該接觸面的突出形狀而形成凹凸^ 色緣紐1〇的與電路層1〇3的接觸面形成填料幻1 ί 。f路層κΐ3錢緣基材κι像這樣職凹凸形狀i :度;^電路層κΐ3與絶緣基材κι的密合性提高,並形成ί ,層KU的與絶緣基材K1的接觸面,_也可以 ii=,緣基材Kl的樹脂層接觸,然而在圖示的態樣中,ί 即% j,、向该電路層κΐ3的接觸面突出的填料κΐ1接觸。亦 =3的·路細)未設置表面樹脂層幻2,填料Ku露出,電路岸$ 之填料K11接觸。如是,由於電路層K13未透過▲面行 繼1的峨觸,_更進-步提高 124 201146113 未被破觸填料如圖所示的,填料κΐ1宜在 ^ 夺未被破壞而突出的半球狀的球面接觸。如是,使= K11的;而直接與電路層K13接觸,以翻樹脂基4 Μ ^電路溝槽K3的路出面突出並露出的態樣。 接觸的^式底面以及侧面與填料K11 产。亦即,除了底面的密合性之外,側面的密合性也 S;==;=小的高精度電路基板 在本發明的電路基板K10中,由於如上所述的使密合 故J路層K13喊度賴形成得很狹小 的寬度(W)與高度(T)的比(W/T)宜在αι以上3G 3 有w/τ在該範圍内的電路層K13的電路基板Kl〇是較佳的能 樣:藉此,便可使電路層Κ13的寬度縮小,進而製得高精度的^ 路土板Κ10。若W/Τ比該範圍更小會有無法實際應用的疑慮。相 反的若w/τ比該範圍更大則可能無法達到高精度化(電路的高密 度化)之目的。另外,亦可將電路層Κ13形成立體狀的電極,此時, 不設定(w/τ)的上限也沒有關係。 在本發明的電路基板Κ10中,由於能夠不受電路層Κ13的高 度τ的影響,而獲得較高的密合性,故比較容易針對每一層電路層 Κ13 5史疋電路層Κ13的高度τ(深度)。因此,能夠以簡單的方式製 得具有不同深度之電路層Κ13的電路基板Κ10。 另外’電路基板Κ10雖圖示為平板狀’惟如後所述,電路基 板Κ10亦可為立體電路基板Κ60。亦即,本發明並非僅限於在平面 的絶緣基材Κ1上形成電路層Κ13的電路基板Κ10。具體而言,絶 緣基材Κ1若使用具有尚低差狀之立體面的三維形狀的絶緣基材 125 201146113 ΚΙ,便可如_ 32所示的’製得具備正確配線之電路層K13的電路 基板κιο (立體電路基板Κ6〇)。 〔電路基板的製造方法〕 兹説明本發明的電路基板Κίο的製造方法。 本發明的電路基板Κ10可由包含以下步驟之方法製得:在絶 ,基材κι的表面上形成樹脂覆膜Κ2的覆膜形成步驟;以該樹脂 ,膜Κ2的外表面為基準形成具備比該樹脂覆膜Κ2的厚度更深的 ^度的凹部以形成電路圖案部的電路圖案形《纟驟;在該電路圖案 =的表面上以及該樹脂覆膜Κ2的表面上彼覆電鍍觸媒或其前驅物 5的觸媒披覆步驟;從該絶緣基材Ki除去該樹脂覆膜的覆膜 ^去步驟;以及在除去該樹脂覆膜尺2之後的殘留該電鍍觸媒或其 物Κ5的部位上形成無電解電鍍膜Κ6的電鍍處理步驟。、雖^ 製造方法並非僅限於該方法,然而以該方法形成上述電路基 &amp; 是較佳的選擇。 利用該等製造方法會比較容易在欲形成電鍍膜的部分上殘留 電鍍觸媒或其前驅物Κ5並將電鍍觸媒或其前驅物Κ5從其他部分 除去。因此,藉由實施形成無電解魏膜Κ6的電鍍處理步驟 可輕易在殘留該電鍍觸媒或其前驅物Κ5的部位上亦即欲彤成雷 膜的部分上形成無電解電鍍膜Κ6。 乂 因此’便能夠以比較容易的方法在絶緣基材幻表面上 ,度=路層K13。亦即,能夠使所形成之電路的輪鱗持^ 度:結果,即使在例如隔開既定間隔距離形成複數電路的情況 也能防止無電解電鍍膜的碎片等殘留在電路之間,因此,^夠’ 短路或遷移等問題的發生。另外,能夠形成所期望之深度 =電 意剖if。制來說明在上絲板的製造方法中的各步驟的示 首先,如圖29(A)所示的,在絶緣基材K1的表 覆膜K2。另外,該步驟相當於覆膜形成步驟。 Μ%曰 ,著’如圖29(B)所示的’以該樹脂覆膜K2的外表 形成具備比職脂覆膜Κ2的厚度更深的深度的凹部,使填料3 126 201146113 圖案部。凹部比樹脂覆膜K2的厚度更深便 的電路溝槽Κ3, °/電路圖案部可為挖掘該絶緣基材Κ1所得到 該電路溝;;,亦可因應需要,在該絶緣基材Κ1上對部分 K3限定用以形成貫通孔K4。另外,可藉由該電路溝槽 出形成有電丄m,形成無電解電鑛膜的部分,亦即,限定 步驟。另外,。另外’該步驟相當於電路圖案形成 説明。 下關於電路圖案部,係以電路溝槽K3為中心進行 形成電路溝槽K3的表面上以及未 前驅披覆電鍍觸媒或其 除去。ί此樹脂覆膜Κ2從該絶緣基材Ki S3上:$,觸媒或其前驅物K5,在載置‘該ίίΪί 當於亥樹脂覆膜Κ2 一併被除去。另外,該步= 鍍。藉I,的絶緣基材κι實施無電解電 電鍍臈Κ6。亦即分上形成無電解 部分上’形成無電解電錢膜K6當^電j有=路 =Κ3的 似3或該貫通孔K4整娜域來的方i, 無電解電賴K6所構成的電路層K1 =路層κΐ3的纏被_。另外,卿 开αϊϋϊ”驟’形成如圖29(ε)所示的電路基板謂。如是 =之電路基板謂,可在該絶緣基材K1上形成高精度的電路層 127 201146113 以下,説明各步驟。 &lt;覆膜形成步驟&gt; 脂覆上所述,係在絶緣基材K1的表面上形成樹 材卿無由定含有填料仙的樹脂所形成的(樹脂基 板的mm妓構成桃基域造敗各種有機基 板的树月曰即可,其他並無特別限定。具體而言,例如 樹ί 、聚醯亞卿旨、聚苯硫嘛旨、聚曰苯 (树知、减糾&amp;、本並料_、雙騎碰胺樹脂等。Ifϊίί 2 degrees^ is smaller than the depth dl of the circuit pattern G24. Therefore, the conduction of the circuit (10) = is sufficiently filled with the metal of the interlayer connection hole G21, and the connection between the circuit G26 and the interlayer connection hole G21 is excellent. Use or cover to reduce the 应 or 犯 of the 应, or the wiring G26a of the circuit pattern G24, the width of the groove or the (four) part (the size of the _ hole, etc., except for &lt; 2 „0〇/ 〇 ' ' ' can also be 〇 汜 以 以 以 以 以 以 以 以 以 以 以 以 以 以 以 G G G G G G G G G G G G G G G G G G G G G G G G G G G The step towel 'metal column G22 Ψ mine is at a position that is more retracted than the bottom surface of the circuit pattern G24. The bottom of the metal column before the step of removing and finely removing the ilU is easy to reach the top of the metal column G22. In the case of the G20 surface excavation circuit pattern G24, the top of the metal column G22 and the surface circuit G2 of the insulating layer G20 ^ the bottom surface 3 high ^ the top of the metal column G22 from if (the top of the t^iG22 is not reached Μ L secret, the state of the metal pattern of the metal pillar road pattern G24 is prominent; the surface of the metal surface G22 is not electrically charged [ΪAdditional description of the implementation aspect] Figure 27, in more detail, the (C) opening formation 118 of the fourth embodiment is performed. 201146113 Step, (E) Film forming step, (G) The dielectric coating step is as follows: The metal column G22 may be in the shape of a truncated cone or a truncated cone as described in the step of forming the metal pillar according to the fourth embodiment, and Fig. 27C shows the fourth embodiment. In the case of the (C) opening forming step, the interlayer connection hole G21 having a shape in which the diameter of the surface side of the insulating layer G2 is larger than the diameter of the first circuit G11 is formed. As shown in Fig. 27E, in the (8) film forming step of the 4-1st embodiment, the surface of the insulating layer G2 and the top of the metal post ο are formed with the metal for filling the resin film 〇 23 (10). The column G22 also forms an insulation, that is, a shape in which the metal length is larger. Also, when the circuit pattern forming step irradiates the surface of the resin skin with a laser beam, the large diameter portion of the metal column G22 is shielded. And Jing produces the part of the insulating layer G2G that has not been removed. As a result, in the (6) catalyst overcoating step of the catalyst (4)^4-1 implementation, the plating is applied to the insulating layer: ί 09 ϋ, in The side of the metal post G22 is not covered with the plating catalyst G25, so in the metal column ^ tam ί ff f022 ί As shown in FIG. 201, the metal ^ 2 protruding from the bottom surface of the metal ==:::: is difficult to cover the case where the catalyst G25 is applied to the circuit pattern G24 119 201146113 - 4, even if the upper portion is lower than the lower portion The thick metal post G22 does not have a problem of poor connection between the metal crucible G22 and the second electric circuit G26. [Fifth Embodiment] The present invention further relates to a circuit formed by embedding a circuit layer composed of a conductor. In the past, a circuit board in which a circuit layer made of a conductor is embedded can be formed by a CMp (Chemical Mechanical Polish) method (for example, Japanese Patent Publication No. 2000-49162). Figure 33 shows an embodiment of the CMP method. In the CMp method, first, as shown in Fig. 33 (a), a circuit trench illusion (groove portion) is formed by laser processing on the surface of the insulating substrate K1. Next, as shown in (B), an electroless plated film 6 is formed on the entire surface of the insulating substrate κ1 including the circuit trench K3. Then, as shown, after applying a voltage to the electroless plating film K6 to form an electrolytic plating film K2 on the entire surface of the insulating substrate K1, as shown in (9), the grinder K22 will electrically charge the film 21 and The electroless plated film 6 is removed from the surface of the insulating substrate K1 to expose the surface of the insulating substrate K1. By the above steps, the circuit board on which the circuit layer K13 is embedded can be obtained, and the circuit board 10 can be set to a width of, for example, about 30 μΓΠ, so that a high-precision circuit board can be obtained (10). . However, the circuit substrate K1〇 formed in the above manner, as shown in FIG. 3 to: the insulating base (4) of the J-containing circuit trench Κ3 is removed by the bismuth f' and the remaining electric ore is removed, g Then, as shown in Fig. 34(C), since the polishing force applied by the polishing ray film is different, the surface of the electric film formed by the removal of the electric film is removed, and since the exposed filler K11 is caused by the filler K11 on the surface. Will not be able to maintain the original shape. : The chance of smashing and falling off the road is higher, and the subsequent step may be caused by pollution. In addition, due to the grinding of the surface of the insulating substrate K1, the surface can be exposed. The filler K11 is used as a starting point to generate minute cracks. Further, since the filler K11 on the surface is broken, the substrate characteristics such as thermal expansion property or strength may be =, and the circuit board in which the circuit layer composed of the conductor is buried may be produced. The method, for example, the conventional transfer method, the transfer method is to form the surface with the surface of the circuit layer opposite to the surface of the insulating substrate to adhere to the edge of the edge, and then turn the circuit layer. The substrate is printed and embedded in the insulating substrate, and the circuit layer is pressed and embedded in the insulating substrate, and is formed by contacting the resin coating on the outer surface of the insulating substrate. The problem that the adhesion of the material is low. The bottom surface v of the square g for improving the adhesion can be treated by the CZ treatment on the surface (circuit layer, bottom surface) of the metal foil provided on the release material, although Improve the adhesion of the bottom of the circuit layer = side bribe Sex, silk forming a narrow layer of secret layer two transfer method - generally the depth of the circuit layer is formed into a circuit layer with different taste. In addition, the transfer path formed by the g layer of the circuit ==== short There is a limit of 'so that it can't be made between the circuit layers. It is very short ^1 in _# (four) stealing, the law, such as subtraction method, accumulation method, etc., it is difficult to form ^ 3酉 =. Furthermore, even if fine wiring can be formed, if the peeling material μ 3 & degree is too strong, it cannot be transferred onto the insulating substrate, and the yield is too weak, and it is difficult to get from the material. Micro-cause, peeling the material and the sound of the dense surface by ρ丨^ Λ,, ''W peeling off the material and the circuit ^ electricity; layer transfer to the insulation ^ control will become more difficult, but also can not be fine with another In the case where the insulating substrate is multilayered, if the transfer method is employed, since 121 201146113 does not form a circuit on the insulating core, a circuit is formed on the release material in advance, and then transferred onto both sides of the insulating substrate. It is difficult to wire the wire between the layers, so it is difficult to align the position with high precision. </ RTI> The problem of the present invention is to provide a high-precision circuit substrate which does not lower the adhesion height of the circuit layer even if the filler is broken. Also, the fifth embodiment of the present invention includes the following technical contents. a circuit substrate formed by forming an insulating substrate formed of a filler-containing ore material into a circuit layer formed of a surface material, wherein a contact surface of the characteristic substrate is formed along a protruding shape of the filler contact surface. [Claim 5-2. The circuit substrate as recited in claim η, wherein the contact surface of the insulating substrate and at least part of the request from the contact surface are filled with the request 5-3. Or in 5-2, the exposed surface filler of the j insulating substrate is not exposed. Earth, /, request item 5.4. As in the request item 5_1~5-3, the circuit board described in the item, iT^5-6. As claimed in item 5 - 丨~5-5 The exposed surface of the circuit A described in the item is very flat and is not invented on the boundary line with the insulating substrate. Since the exposed surface of the insulating substrate is made of a filler material, it is possible to prevent the material from being ^^ Maintains the shape by filling the filler with a low insulating base. In addition, since the characteristics of the substrate such as electric heat spreadability or strength are reduced to form a concavo-convex shape, the contact surface of the material follows the protruding shape of the filler, and the circuit layer and the insulating substrate are combined in a concave-convex manner, so that the circuit can be improved 122 201146113 Adhesion of the layer to the insulating substrate. And the invention of the life = ^ 5-5 is due to the contact of the circuit layer with the insulating substrate 2, so that the circuit layer does not penetrate the resin layer but directly with the insulating substrate, so that the circuit layer can be further improved. The adhesion of the circuit layer ss===;= With the invention of Ray 5:4, the contact surface of the insulating substrate with the circuit layer facilitates the contact surface to make the filler protrude, so that the fine surface is formed into a concave-convex shape. In this way, a high-precision circuit substrate having high adhesion is obtained. Twisting, γΓ^明' is made thin by making the exposed surface of the circuit layer very flat, and at the same time eliminating the inter-board between the circuit layer and the insulating substrate - and making the circuit substrate flat Very smooth circuit base = 8. = The implementation of the circuit board for the application of T - an example of the insulation of the base iK1 __ is formed using a circuit layer 103 composed of a right H 驹 4: 1 + 〒. In the case where the filler K11 is in the form of a ruthenium and a ruthenium, a spherical filler κη is used. 4 of κΐ3: the exit surface) forms a flat surface. That is, the width W of the circuit layer illusion 3 is secret. In the circuit layer, the circuit &gt; K1 &amp; = &amp; gas characteristics can be improved. Then, there is no height difference between the surface of the patterned circuit layer K13 and the surface of the insulating substrate K1. By this, the entire surface of the circuit board K1G is flat, and the thin circuit board K10 can be made. The exposed surface of the insulating base material K1 is different from the case where it is formed by the CMp method. That is, in the case of formation by the CMp method, the insulating substrate K1 in which the filler K11 shown in FIG. 34 is broken and exposed is formed, but the exposed substrate κιο of FIG. 2 is not exposed on the exposed surface of the insulating substrate K1. In the vicinity of the filler κ ϊ ΐΐΐΐ ΐΐΐΐ , , , , , , , , , , 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘The surface resin layer K12 is composed of a resin component which does not contain =1, and which coats the film of the surface of the rim substrate K1. Here, the term "resin component" refers to a component other than the filler K11 forming the insulating base material (2) other than the resin, and further contains a component such as a curing agent or a component. In Fig. 2, the surface resin layer is closer to the surface side (outer side) than the line. Since the sample resin layer K12 covers the filler KU, it is possible to fill _ and produce a filler or a micro-wei problem. The surface of the road surface κι is embedded in the surface of the insulating substrate κι (with the protruding surface of the insulating substrate 2 ^ 2, the contact surface of the filler K11, and the contact surface of the circuit layer 1 〇 3 is formed to form a filler Fantasy 1 ί. f road layer κ ΐ 3 money edge substrate κι like this job concave shape i: degree; ^ circuit layer κ ΐ 3 and insulation substrate κι improve adhesion, and form ί, layer KU with insulating substrate K1 The contact surface, _ may also be ii =, the resin layer of the edge substrate K1 is in contact, however, in the illustrated aspect, ί is % j, and the filler κ ΐ 1 protruding to the contact surface of the circuit layer κ ΐ 3 is in contact. The surface of the road is not set to the surface of the resin layer 2, the filler Ku is exposed, the circuit shore $ of the filler K11 contact. If, because the circuit layer K13 does not pass through the ▲ face line followed by 1 touch, _ more advance - step increase 124 201146113 Unbroken fillers as shown in the figure, the filler κΐ1 should be used to capture the hemispherical ball that is not damaged and protrudes. Contact. If so, make = K11; and directly contact the circuit layer K13, to turn over the resin substrate 4 Μ ^ circuit groove K3 road surface protruding and exposed. Contact the bottom surface and side with the filler K11. That is, in addition to the adhesion of the bottom surface, the adhesion of the side surface is also S; ==; = small high-precision circuit substrate in the circuit board K10 of the present invention, since the adhesion is as described above The layer K13 is formed in a very narrow width (W) to the height (T) ratio (W/T). It is preferable that the circuit board K13 of the circuit layer K13 having w/τ within the range is α1 or more and 3G 3 The preferred energy sample: by this, the width of the circuit layer 13 can be reduced, and the high-precision earth plate Κ 10 can be obtained. If the W/Τ is smaller than the range, there is a doubt that practical application cannot be applied. If w/τ is larger than this range, it may not be possible to achieve high precision (higher density of the circuit). Alternatively, the circuit layer Κ13 may be formed into a three-dimensional electrode, and at this time, (w/τ) is not set. The upper limit of the circuit board Κ10 of the present invention can be obtained by being affected by the height τ of the circuit layer Κ13. With high adhesion, it is relatively easy to measure the height τ (depth) of the circuit layer 13 for each layer of the circuit layer. Therefore, the circuit substrate 10 having the circuit layers 13 of different depths can be produced in a simple manner. The circuit board 10 is illustrated as a flat plate. However, as will be described later, the circuit board 10 may be a three-dimensional circuit board 60. That is, the present invention is not limited to the circuit in which the circuit layer 13 is formed on the planar insulating substrate Κ1. The substrate Κ10. Specifically, if the insulating substrate Κ1 is made of a three-dimensional insulating substrate 125 201146113 having a low-dimensional three-dimensional surface, the circuit layer K13 having the correct wiring can be obtained as shown in FIG. The circuit substrate κιο (stereo circuit board Κ6〇). [Method of Manufacturing Circuit Board] A method of manufacturing the circuit board of the present invention will be described. The circuit board 10 of the present invention can be obtained by a method comprising the steps of: forming a film forming film of the resin film 2 on the surface of the substrate κ; and forming the resin with the outer surface of the film 2 as a reference. The concave portion of the resin film Κ 2 having a deeper thickness is formed in a circuit pattern shape of the circuit pattern portion. The surface of the circuit pattern 以及 2 and the surface of the resin film Κ 2 are coated with a catalyst or a precursor thereof. a catalyst coating step of the material 5; a coating removal step of removing the resin coating film from the insulating substrate Ki; and a portion where the plating catalyst or the substance Κ5 remains after the resin coating ruler 2 is removed A plating treatment step of forming the electroless plating film Κ6 is formed. Although the manufacturing method is not limited to the method, it is preferable to form the above circuit base &amp; With such a manufacturing method, it is relatively easy to leave the plating catalyst or its precursor Κ5 on the portion where the plating film is to be formed and to remove the plating catalyst or its precursor Κ5 from the other portions. Therefore, by performing the plating treatment step of forming the electroless Wei film 6, the electroless plated film 6 can be easily formed on the portion where the plating catalyst or its precursor Κ5 remains, i.e., the portion to be formed into a smear film.乂 Therefore, it is possible to use an easier method on the surface of the insulating substrate, the degree = road layer K13. In other words, it is possible to maintain the scale of the formed circuit: as a result, even if a plurality of circuits are formed at a predetermined interval distance, for example, it is possible to prevent fragments of the electroless plating film from remaining between the circuits, and therefore, Enough 'short circuit or migration problems. In addition, the desired depth = electrical profile if can be formed. Description of the steps in the manufacturing method of the upper wire plate First, as shown in Fig. 29 (A), the surface film K2 of the insulating base material K1. In addition, this step corresponds to a film forming step. Μ%曰, as shown in Fig. 29(B), a concave portion having a depth deeper than the thickness of the protective film coating 2 is formed on the outer surface of the resin coating K2 to form a pattern portion of the filler 3 126 201146113. The circuit trench Κ3, °/ circuit pattern portion having a recess portion deeper than the thickness of the resin film K2 may be the circuit trench obtained by excavating the insulating substrate Κ1; or, if necessary, on the insulating substrate Κ1 The portion K3 is defined to form the through hole K4. Further, a portion in which an electroless ore film is formed by forming an electric field m by the circuit trench, that is, a limiting step. In addition, Further, this step corresponds to a circuit pattern formation description. Next, regarding the circuit pattern portion, the surface of the circuit trench K3 is formed on the surface of the circuit trench K3 and the pre-dried plating catalyst or removed. The resin film Κ2 is removed from the insulating substrate Ki S3: $, the catalyst or its precursor K5, and the ‘the ίίίί 于 树脂 resin film Κ 2 is placed. In addition, this step = plating. The electroless plating 臈Κ6 is carried out by the insulating substrate κι of I. That is, the electroless electricity film K6 is formed on the electroless portion, and the electroless electricity film K6 is formed by the electromagnetism K6 when the electric circuit j has = road = Κ3 The circuit layer K1 = the wrapper of the road layer κ ΐ 3 . Further, the circuit board shown in Fig. 29 (?) is formed as shown in Fig. 29 (?). If the circuit board is =, a high-precision circuit layer 127 can be formed on the insulating base material K1. &lt;Laminating film forming step&gt; The resin substrate is formed on the surface of the insulating substrate K1 without forming a resin containing a filler (the mm of the resin substrate constitutes a peach-based domain). The tree moon 曰 of various organic substrates may be used, and the others are not particularly limited. Specifically, for example, tree ί, 聚醯亚卿, polyphenyl sulphide, poly benzene (tree knowledge, subtraction correction &amp; And _, double riding amine resin.

的产7是構成可用絲造電路基板的各種有機基板 的日即可,其他並無特別限^。具體而言,例如 A 氧樹脂、雙驗F型環氧樹脂、雙紛s型環氧樹脂、 产 ΪΪ氧2酚巧環氧樹脂、烷基苯酚酚醛型環氧樹脂;€酚 日其^ ΐ氧樹脂、倍環戊二烯型環氧樹脂、苯_與具 有本酚性祕之料族_縮合赫的環氧 $過4匕性的上述環氧樹脂、含氮樹脂、含矽酮樹脂等。另 ^旨可糊㈣墙糊脂以及 麻甘H當用上述各樹脂構成基材時,—般而言,為了硬化,會 硬化劑’只要是可以使用的硬化劑即可曰, ^並無特別限疋。具體而言,例如:二氰二胺、苯紛系硬化 :化ί丨硬广Γ、氰基三嗪酚醛系硬化劑、氰酸酯樹脂等。該苯酚系 f化!,例ΐ. _型、芳烧型、㈣型等硬化劑。另外,關於該 硬化,’匕可獨使用上述各硬化劑,亦可組合使用2種以上。… ”化劑,例如:酚醛型、芳烷型、_型等硬化劑。 一步賦予阻燃性可使用例如經過鱗變性的苯盼樹脂或是 經過辦性的轉脂等。另外,關於該硬化 128 201146113 述各硬化劑,亦可組合使用2種以上。 宰,限定’惟由於係利用雷射力°工形成電路圖 〜4GGnm波絲圍的雷射光的吸收率良好 、子月日八體而吕,例如聚醒亞胺樹脂等。 粒子然ί可κι含有填料κι卜該填料κΐ1可為無機微 / 了為有驗粒子’並無特麻定。由於含有猶K11,若 出所开部位使填料K11以未被破壞的狀態露出,填料K11突 出所形成之凹凸面便可提高電鍍與樹脂的密合性。· 機微粒子的材料,具體而言,例如:氧化罐㈣、 ί BaT= ^WN)、氮化1_)、二氧切_)、鈦酸 ί 等的高介電常數填充材料;硬鐵氧磁體 条性真充材料,風氧化鎮_(0H)2)、氫氧化雖1 _)2)、三 舻拉哲伽03):五氧化錄(Sb2〇5)、胍鹽、硼酸鋅、鉬化合物、硬脂 mm ; ^(Mg3(Si4〇1〇)(〇H)2)' ^SBl(BaS04) ' 料。’該錢微粒子,可單賊用上述無 ,微拉子,亦可組合使用2種以上。該等無機微粒子,由於 =相對介電常數、阻雕、粒徑分布、色_自由度等很高,故 ^所期望的抛選雜發揮的情訂,進行適#摻合以及粒徑設 计’便可輕易達到高度填充化之目的。 另外,該無機微粒子,為了提高在該絶緣基材中的分散性,可 S3,進行表面處理。絲’該絶緣基材,為了提高該無機 二、子在H緣基材中的分散性’亦可含有矽烷偶合劑。關於該石夕 ,偶合劑’具體而言’例如:環氧石夕烧系、魏基魏系、胺基石夕烷 二烯基石夕烷系、笨乙烯基石夕烷系、曱基丙烯醯氧基矽烷系、丙 备氣基石夕烧系、鈦酸鹽系荨的石夕烧偶合劑等。該石夕烧偶合劑可單 獨使用上述石夕烧偶合劑,亦可組合使用2種以上。 另外,該絶緣基材IG,為了提高該無機微粒子在該絶緣基材 中的分散性,亦可含有分散劑。關於該分散劑,具體而言,例如: 烷醚系、山梨酸酯系、烷基聚醚胺系、高分子系的分散劑等。該分 散劑可單獨使用上述分散劑,亦可組合使用2種以上。 129 201146113 另外,關於該有機微粒子,具體而言,例如:橡 % 的粒徑,宜為絶緣基材K1的厚f以^^粒 位/、體,5 ’平均粒徑宜為〇 〇1〜1〇μιη,平均粒徑更 ‘ 二5μ=。若填料K11的粒徑在該範圍内,在絶緣基材κ表面 ϊΐίΐ有填料KU的表面樹脂層Κ12就會比較容易,另外,填 料 路出之電路溝槽Κ3與電路層Κ13的密合性也會提古。a埴The production 7 is a day for constituting various organic substrates which can be used as a circuit board, and the others are not particularly limited. Specifically, for example, A-oxygen resin, double-finished F-type epoxy resin, double-type s-type epoxy resin, bismuth-oxygen 2 phenol epoxy resin, alkyl phenol novolac type epoxy resin; Oxygen resin, pentacyclopentadiene type epoxy resin, benzene_ and the above-mentioned epoxy resin, nitrogen-containing resin, fluorenone-containing resin, etc., having an epoxy group having a phenolic property . Further, it is possible to paste (4) wall paste and gamma H. When the base material is formed of the above-mentioned respective resins, in general, the curing agent can be used as long as it is a hardener which can be used for curing. Limited time. Specifically, for example, dicyandiamide and benzene are hardened: a hard sputum, a cyanotriazine phenolic curing agent, a cyanate resin, and the like. This phenol is f! , ΐ. _ type, aromatic type, (four) type and other hardeners. In addition, as for the hardening, the above-mentioned respective curing agents may be used alone or in combination of two or more. "Chemical agent, for example, a hardener such as a phenolic type, an aralkyl type, or a _ type. For example, a flame-retardant property can be used, for example, a quaternary-denatured benzene resin or a transesterified product, etc. 128 201146113 The various hardeners can be used in combination of two or more types. Slaughter, limited to 'only due to the use of laser force to form a circuit diagram ~ 4GGnm wave circumference of the laser light absorption rate is good, the month of the month and the body For example, awakening imine resin, etc. The particles can be filled with κ ιι ι 该 该 该 ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ When exposed to the unbroken state, the filler K11 protrudes from the uneven surface formed by the filler K11 to improve the adhesion between the plating and the resin. The material of the fine particles, specifically, for example, an oxidation can (4), ί BaT = ^WN), High dielectric constant filling material such as nitride 1_), dioxo_), titanate ί; hard ferrite magnet strip material, wind oxidation town _(0H)2), hydroxide 1 _) 2 ), Sancha Lazhega 03): pentoxide (Sb2〇5), strontium salt, zinc borate, Compound, hard fat mm; ^(Mg3(Si4〇1〇)(〇H)2)' ^SBl(BaS04) 'Material. 'The money microparticles, can be used for single thieves, micro-pillars, can also be combined Two or more kinds of inorganic fine particles, because of the relative dielectric constant, the obstruction, the particle size distribution, and the color-degree of freedom, etc. The particle size design can easily achieve a high degree of filling. Further, the inorganic fine particles can be surface-treated with S3 in order to improve the dispersibility in the insulating substrate. The dispersibility of the inorganic dimer in the H-edge substrate may also contain a decane coupling agent. Regarding the ceramsite, the coupling agent 'specifically' is, for example, an epoxy epoxide system, a Wei Ke Wei system, an amine base stone eve. An alkadienyl phthalocyanine system, a stupid vinyl oxalate system, a mercapto propylene decyloxy decane system, a propylene gas sulphate system, a titanate sulphur coupling agent, etc. The mixture may be used alone or in combination of two or more. In addition, the insulating substrate IG In order to improve the dispersibility of the inorganic fine particles in the insulating base material, a dispersant may be contained. Specific examples of the dispersant include an alkyl ether system, a sorbate system, an alkyl polyether amine system, and a polymer. The dispersing agent may be used alone or in combination of two or more kinds thereof. 129 201146113 Further, the organic fine particles, specifically, for example, the particle diameter of the rubber % is preferably an insulating substrate. The thickness f of K1 is ^^ grain position/body, and the 5' average particle size is preferably 〇〇1~1〇μιη, and the average particle size is more than '2 5μ=. If the particle size of the filler K11 is within this range, it is insulated. It is relatively easy to form the surface resin layer Κ12 of the substrate κ with the filler KU, and the adhesion of the circuit trench Κ3 of the filler to the circuit layer Κ13 is also advanced. A埴

料KU的平均粒徑比上述的範圍更小時,填料κη突會出^形2 凹凸形狀所導致的密合效果可能會變小,相反的若填料K 時’便可能無法形成細微的電路溝槽K3 : ΐίΐΓ藉使用雷射繞射粒徑分布計的光散射法進行測量,喪 仵作為球體相當直徑(算數平均粒徑)。 里求 填料Κ11的形狀並無特別限定,可使用球狀者。除此之 可使用破碎狀等雜的频K1卜其中,宜個球狀填料。 ,料K11的含有量,宜相對於硬化後 1〇〜95質量。/0,更宜為30〜90質量%,最好是50〜85質^;里為 m ^的含有量進人該範_情況下,更進—步提高填料 3有1,可使樹脂基材K1的熱膨脹接近所形成之導體電路 的熱膨? ’藉缝可提高基齡触境獨可缝。 的含有1比該範圍更低時,電路層K13與絶緣基材K1的密合性合 ,差’另外’_脹會敎,基板在熱魏τ的可靠度便有降低丄 虞。相反的當填料Κ11的含有量比該範圍更高時,填料K11會從 ,緣基材K1的表面露出,在將絶緣基材K1與其他基材堆疊^形 時,可能會流動性變差而產生擦傷瑕疵之虞。 絶緣基材K1係由含有上述成分的樹脂域物以適當方式成形 的構件。亦可在樹脂組成物中添加溶劑。此時,絶緣基材K1合在 J有流動㈣狀態下機過雜之後,再使其硬化,藉此,便备在 ,,色緣基材K1的表面上形成未含有填料K11的表面樹脂層K12。亦 即,由於樹脂組成物具有流動性’在硬化之前填料K11不會直接露 ^於表面而會埋入内部,故樹脂成分(填料K11以外的成分)的膜層 έ形成在未硬化的絶緣基材K1的表面上。然後,由於維持該狀態 130 201146113 K1的声㈣古★ r^f卜* CMP * ’若採用研磨絶緣基材 的‘=受去,且接近表層 而露出的態樣。爾故攸表面可觀察到填料K11受到研磨 只分另緣基材K1的態樣並無特別限定。具體而t,可為 。,言’若是片材、薄膜、預浸材的話二 可^ 為2G〜1(%m左右。另外,該絶緣基^ 宂了3有一軋化矽粒子等的無機微粒子。 (樹脂覆膜) 並4=膜在該覆膜除去步驟除去即可,其他 解的Γ 可用有機溶劑或驗性溶液輕易溶 S成脂 尤1官蚀用的、、、專^中,從锨底除去比較容易的觀點來看 潤i的耗覆膜。另外,該膨潤性樹脂覆膜對該液體(膨 潤/夜)的μ度且在例如50〇/〇以上。藉 ίίΐ绫易將該樹脂覆膜從該絶緣基材剝離。如丄,ί更容f ίΐί 表面上形成高精度的電路層K13。另外^ 者二、’、匕3相對於該液體的膨潤度較大而會被該液體溶解 =卜及膨謂性樹脂覆膜,除了相於 、卜相對於該液體(膨潤液)會膨潤,更會至少一部分、、办 ϊ覆i,?,潤或溶解而容易從該絶緣基材κι表面剝離的ΐ 咖溶解而容 遺曰覆膜K2的形成方法並無特麻定。具體而言,例如: 131 201146113 上塗佈可形成樹脂覆膜的液狀材料之後使 &amp;成的在支縣板上塗佈練狀材料之後將乾燥後所 轉印到絶緣基材κι的表面上的方法等。另外,塗 佈“棍塗::ΐ並無特別限定。具體而言’例如:習知的旋轉塗 -srxr s ; ?;i::rT:;!r: 於該樹脂覆臈K2的厚度,宜在〇lum以t,f万面, 力或機械加工所形成之電路溝槽K3或貫通孔K4等的雷路圖索 度會有降低的傾向。另外’當該脂覆膜K2 #厚度太薄時: 曰有難,形成平均膜厚之樹脂覆膜Κ2的傾向。 關於該樹脂覆膜Κ2,舉例説明較佳的膨潤性樹脂覆膜。 该樹縛膜宜為對細液的躺度在.⑽以上的樹脂 f。f者,更宜為對膨潤液的膨潤度在職以上的樹脂覆膜。 有Ϊ以太鱗’在該覆麟好射膨雛樹脂覆膜會 霜膜削彡射法並嫌_,個與上述樹脂 ί材κι 方ί相同的方法即可。具體而言’例如,在該絶緣 軸細性麟覆咖絲㈣之後使其 彤成之獻靠支持基板上塗佈該液狀材料之後’將乾燥後所 化成之制性翻旨覆_印观緣級K1的表面上的方法等。 «υΐίί該樹脂覆膜的液狀材料’例如’彈性體的懸浮液 1該彈性體的具體例,例如:苯乙烯—丁二烯系共 w勿專的—稀㈣性體’丙烯_旨系共聚 !^,3旨_性體等。勤_鱗彈性體,便可藉_“=縣 狀触雜簡驗子的㈣度轉化鮮雛而輕易 7成所期望之膨潤度的膨潤性樹脂覆膜。 體的Ϊΐίί覆膜K2宜為在該絶緣基材K1表面上塗佈彈性 -、心子液或礼狀液之後使其乾燥所形成之樹脂覆膜K2。若使用 132 201146113 =覆的表面上形成樹脂覆 路層K13。 自在錄基材K1的表面上碱高精度的電 另外H脂toK2宜秘 娜爾㈣ t覆膜更且為在支持基板表面上塗佈 i看是較擇很細脂賴K2,從量紐優異的觀點 取t巧性體宜從具有縣的二烯系彈性體、丙烯酸緖性體以及 ΐίί3體?出,佳。f外,該二烯系彈性體更 ί成具備所期望之膨潤度的樹脂覆膜。另外1 形成====的該液體的膨潤度更大,亦可輕易 的 4:系 性條件料觀猎由使摘職覆步驟中的液 li 酿細旨覆輯絶緣紐轉鹤的密合力, 離。设、示γ驟中的pH值之下使膨潤性樹脂覆膜輕易地被剝 鮮,例如,當該觸媒披覆步驟具備例如在PH值1〜3 声二的丰-祕電綱媒膠狀溶液(雜觸金麟狀溶液】中進行 ί =步驟’且該覆膜除去步驟具備在pH值12〜14的範圍内的 言妙驟時’該膨潤性樹脂覆膜對 下膠狀溶液的膨潤度宜在6〇%以下,更宜在4〇%以 最好是在;。麟财宜在观社,更絲働%以上’ 133 201146113 該等膨潤性樹脂覆膜,例如:由具有既定量之羧基的彈性體所 形成的片材’用於印刷配線板的形成圖案用的乾膜光阻(以下亦稱. 為DFR)中的光硬化性的驗性顯影型的光阻經過全面硬化之後所得 到的片材,或是熱硬化性或驗性顯影型片材等。 關於具有羧基之彈性體的具體例,例如:包含具有緩基的單體 單位作為共聚成分,使分子中具有羧基的苯乙烯一丁二烯系共聚物 等的二烯系彈性體、丙烯酸酯系共聚物等的丙烯酸系彈性體^及聚 酯系彈性體等。若利用該等彈性體,藉由調整被分散成懸浮液或乳 狀液的彈性體的酸當量、交聯度或膠化度等特性,便可形成具備所 期望之驗性膨潤度的膨潤性樹脂覆膜。彈性體中的叛基會因為驗性 水溶液而使膨潤性樹脂覆膜膨潤,具有使膨潤性樹脂覆 ,面剝離的作用。另外,酸當量係指每!當量醜J的 置〇 具有羧基的單體單位的具體例,例如:(甲基)丙烯酸、富馬酸、 桂皮酸、巴豆酸'伊康酸以及馬來酸酐等。 關於該等具有羧基的彈性體中的羧基的含有比例,其酸當量宜 為100〜2000,更宜為100〜80(^當酸當量太小時,與溶媒^其他 組成物的相溶性會降低,導致對電鍍前處理液的耐性會有降低的傾 向。另外,當酸當量太大時,對鹼性水溶液的剝離性會有降低的傾 向0 _ 、 一另外,彈性體的分子量宜為i萬〜100萬,更宜為2萬〜6 當彈性體的分子量太场讎性會树低賴向,太小触度 低’欲維持膨潤性樹脂覆膜厚度均勻很困難,且對前處理&amp; 耐性也會有惡化的傾向。 的 另外,關於該樹脂覆膜,例如由將(a)在分子中至少具有丨個 戈酸酐的至少1種以上的單體以及__ 的至i種以上的單魏合所制的聚合物樹脂或 樹脂組成物所構成者。若使用該等樹脂覆膜,便比 較合易在縣基材K1的表面上形減脂麵。如是,便更容 絶緣基材K1的表社形成高精度的電路。另外,鱗樹脂覆膜大 134 201146113 多可用在該覆膜除去步驟所使用之液體 亦可有效溶解除去。 到離除去之外, 該樹脂組成物以該聚合物樹脂為必要成 添加至少1種絲物、單體、填料或其他添加主細脂’亦可 ^外,DFR以含有蚊量之縣的⑽酸轉脂、When the average particle size of the material KU is smaller than the above range, the adhesion effect of the filler κη may be reduced due to the shape of the concave and convex shape. On the contrary, if the filler K is used, a fine circuit trench may not be formed. K3: ΐίΐΓ is measured by a light scattering method using a laser diffraction particle size distribution meter, and the fungus is used as a sphere equivalent diameter (arithmetic average particle diameter). The shape of the filler crucible 11 is not particularly limited, and a spherical shape can be used. In addition to this, it is possible to use a frequency such as a broken shape, such as a spheroidal filler. The content of the material K11 is preferably 1 〇 to 95 mass after hardening. /0, more preferably 30 to 90% by mass, preferably 50 to 85 by mass ^; in the case of the content of m ^ into the standard _ in the case of more advanced steps to increase the filler 3 has 1, which can be made of resin The thermal expansion of the material K1 is close to the thermal expansion of the formed conductor circuit. When the content 1 is lower than the range, the adhesion between the circuit layer K13 and the insulating base material K1 is combined, and the difference is 'inflated', and the reliability of the substrate in the heat Wei τ is lowered. On the contrary, when the content of the filler crucible 11 is higher than the range, the filler K11 is exposed from the surface of the edge substrate K1, and when the insulating substrate K1 is stacked with other substrates, the fluidity may be deteriorated. Produce a bruise. The insulating base material K1 is a member which is formed in a suitable manner from a resin domain containing the above components. A solvent may also be added to the resin composition. At this time, the insulating base material K1 is hardened after the machine J is in the flow (four) state, and then the surface resin layer not containing the filler K11 is formed on the surface of the color edge substrate K1. K12. That is, since the resin composition has fluidity, the filler K11 is not directly exposed to the surface and is buried inside, so that the film layer of the resin component (component other than the filler K11) is formed on the uncured insulating base. On the surface of the material K1. Then, due to the maintenance of the state 130 201146113 K1 sound (four) ancient ★ r ^ f * CMP * ' if the grounding of the insulating substrate is removed and close to the surface layer exposed. The surface of the crucible K11 is observed to be polished. The aspect of the peripheral substrate K1 is not particularly limited. Specifically, t can be . In other words, if it is a sheet, a film, or a prepreg, it can be 2G~1 (%m or so. In addition, the insulating base has 3 inorganic fine particles such as rolled ruthenium particles. (Resin coating) 4=The film can be removed in the film removal step, and other solutions can be easily dissolved in an organic solvent or an inert solution, and it is easy to remove from the bottom of the crucible. In addition, the swellable resin film has a μ degree to the liquid (swelling/night) and is, for example, 50 Å/〇 or more. The resin film is easily removed from the insulating base. The material is peeled off. If 丄, ί更容f ίΐί, a high-precision circuit layer K13 is formed on the surface. In addition, the second, ', 匕3 are more swelled with respect to the liquid and will be dissolved by the liquid. The resin coating film is swelled with respect to the liquid (swelling liquid), and at least a part of the resin film is melted or dissolved, and is easily dissolved from the surface of the insulating substrate κι. However, there is no specific method for forming the film of K2. Specifically, for example: 131 201146113 After the liquid material of the resin film can be formed, a method of applying the material to the branch plate after drying, and then transferring the film to the surface of the insulating substrate κι after drying, etc.涂::ΐ is not particularly limited. Specifically, 'for example: a conventional spin coating-srxr s ; ?; i::rT:;!r: the thickness of the resin covering K2, preferably in 〇lum to t , the roughness of the circuit groove K3 or the through hole K4 formed by force or machining tends to decrease. In addition, when the thickness of the grease film K2 # is too thin: The resin film Κ 2 having an average film thickness is formed. A preferred swellable resin film is exemplified as the resin film Κ 2. The resin film is preferably a resin f having a flatness of (10) or more. f, it is more suitable for the swelling of the swelling liquid above the service resin film. There is a Ϊ 鳞 鳞 ' 在 该 该 该 覆 好 好 覆 覆 覆 覆 覆 覆 覆 覆 覆 覆 覆 覆 覆 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在ί material κι 方ί The same method can be used. Specifically, for example, after the insulated shaft is finely covered with mica (four), it is made into After coating the liquid material on the support substrate, the method of forming the film after drying is applied to the surface of the edge K1. «υΐίί The liquid material of the resin film is, for example, elastic. The suspension of the body 1 is a specific example of the elastomer, for example, styrene-butadiene-based, non-special-dilute (tetra)-physical-propene-based copolymerization, ^, 3, _sexual, etc. The elastomer can be easily swelled into a swellable resin film with a desired degree of swelling by converting the fresh brood of the _“= county-like touch tester. The body Ϊΐίί film K2 is preferably at the insulating base. A resin coating film K2 formed by coating an elastic-, cardinal liquid or a ritual liquid on the surface of the material K1, and then forming a resin coating layer K13 on the surface of the coating using 132 201146113. Self-recording of the surface of the substrate K1 on the surface of the high-precision electricity, another H-fat toK2 should be secret Nair (four) t-coating and coating on the surface of the support substrate i is a very fine-grained K2, excellent in quantity The point of view is that it is better to use the diene elastomer, the acrylate body, and the ΐίί3 body of the county. In addition to f, the diene elastomer is more a resin film having a desired degree of swelling. In addition, the liquid which forms ==== has a larger degree of swelling, and can also be easily used. 4: The conditional condition is used to observe the adhesion of the liquid in the step of picking up the cover. , away. The swellable resin film is easily peeled off under the pH value in the gamma step, for example, when the catalyst coating step is provided, for example, at the pH of 1 to 3 In the solution (hetero-touch solution), the step ί = step ' and the film removal step is provided in the range of pH 12 to 14 when the swelling resin coating is applied to the lower colloidal solution The swelling degree should be below 6〇%, more preferably at 4〇%. It is best to be in; Lincaiyi is in Guanshe, more than 働%% 133 201146113 These swellable resin coatings, for example: The sheet formed of the elastomer of the carboxyl group is used for the photocurability of the dry film resist (hereinafter also referred to as DFR) for forming a pattern of the printed wiring board, and is fully hardened. The sheet obtained after that is either a thermosetting or an inspectible developing sheet, etc. Specific examples of the elastomer having a carboxyl group include, for example, a monomer unit having a slow group as a copolymerization component, and a carboxyl group in the molecule. Diene elastomer or acrylate copolymer such as styrene-butadiene copolymer Acrylic elastomers, polyester elastomers, etc., etc. By using these elastomers, the acid equivalent, crosslinking degree, gelation degree, etc. of the elastomer dispersed in the suspension or emulsion are adjusted. A swellable resin film having a desired degree of susceptibility to swelling can be formed. The ruthenium resin in the elastomer swells the swellable resin film due to the aqueous solution, and has a function of covering the swellable resin and peeling off the surface. In addition, the acid equivalent means a specific example of a monomer unit having a carboxyl group per unit equivalent of, for example, (meth)acrylic acid, fumaric acid, cinnamic acid, crotonic acid'iconic acid, and maleic anhydride. The content ratio of the carboxyl group in the carboxyl group-containing elastomer is preferably from 100 to 2,000, more preferably from 100 to 80 (when the acid equivalent is too small, compatibility with the solvent other composition) If the acid equivalent is too large, the peeling property to the alkaline aqueous solution tends to decrease. 0 _ , and the molecular weight of the elastomer is preferably i. 10,000 to 1 million, more preferably 20,000 ~6 When the molecular weight of the elastomer is too large, the tree will be low, and the touch will be too small. It is difficult to maintain the uniform thickness of the swellable resin film, and the pretreatment &amp; tolerance will also deteriorate. In addition, the resin coating film is, for example, a polymer resin made of (a) at least one monomer having at least one gas anhydride in the molecule, and at most one or more kinds of monoterpenes of __ or When these resin coatings are used, it is easy to form a fat-reducing surface on the surface of the prepreg base material K1. If so, the high-precision circuit of the insulating base material K1 is formed. In addition, the scale resin coating large 134 201146113 can be used to effectively dissolve and remove the liquid used in the coating removal step. In addition to the removal, the resin composition adds at least one kind of silk to the polymer resin. (10) acid transesterification of DFR with the amount of mosquitoes in the case of substances, monomers, fillers or other added main fats.

脂、本乙烯糸樹脂、苯紛請脂、胺甲酸乙醋系樹脂月^賴 分,可使用含有統合將_光硬化倾敝成物 脈的具體例,例如曰本特開2_—23119 的二;Z -2_51號公報、日本特開平u—212262號公 本 =脂組成物的乾膜經過全面硬化所得到的片材g = 影型的DFR,例如,旭化成股份有限公司製的哪=^驗性顯 另外,關於其他的膨潤性樹脂覆膜,例如:含 = 為主要成分的樹脂(例如,吉川化工股份^且= 「NAZDAR229」)或以苯盼為主要成分的υ =的 LEKTRACHEM公司製「雜」)等。 (例如 膨潤性__,用習知賊魅佈法或棍_ 構將樹脂㈣浮液或乳驗塗佈在崎基材表面上 燥’或用真空疊合機等將形成於支絲板上❾DFR貝占合 = 材表面上之後使其全面硬化,便可輕易形成。 土 另外,該樹脂覆膜,除了上述的樹脂覆膜之外,還有以下的樹 脂覆膜。例如,構成該樹脂覆膜的光阻材料,還有以下的材料。 構成該树脂覆膜的光阻材料的必要特性,例如:(丨)在後述的觸 媒彼覆步驟中,對浸潰已形成樹脂覆膜之絶緣基材的液體(電錄核 附著藥液)的耐性較高;(2)在後述的覆膜除去步驟中,例如, 將已形成树月曰覆膜之絶緣基材浸潰於驗性液體中的步驟,便可輕易 除去樹脂覆膜(光阻);(3)成膜性較高;(4)乾膜(DFR)化較容| ; (5)保存性較高等。 關、於電鍵核附者藥液,雖然文後會有詳述,惟在例如酸性Pd ~~Sn膠狀觸媒系統的情況下’全部為酸性φΗ值1〜2)水溶液。另 外,在鹼性Pd離子觸媒系統的情況下,觸媒賦予催化劑為弱鹼性 135 201146113 耐性必須耐丄知,對電鍍核附著藥液的 謂耐得住,是指當光阻成膜樣= 責不^卜,所 非以此= 刀知,光阻膜厚為1〜ι〇师左右’惟並 覆臈除去步驟所使用的驗性_藥 ==_酸納水二= «声Ϊ ί Γ ΐ到便可輕易除去光阻膜。水溶 為1〜10%左右’處理溫度為室溫〜贼 合 10 ^里’-般以浸潰或_處理,惟並非以此為限。Μ為1〜 為了在絶緣材料上形成光阻,成膜 =ί:陷的均勻薄膜。另外,雖然為了簡 進了確二f理特性,薄媒= 如疋,在貼合時便需要粘著性。因 夠 彎曲性不會降低而裂開。 酿下乾膜的組成不會分離, 脂組成,以主要樹脂(黏合樹 可添加养聚物、單體、填料或其他添加劑等至少盆中^成刀亦 ^樹月旨宜為具備熱可塑性質的直鍵型聚合物 二,等特性亦可接枝而使其分枝。關 = 分子量為麵〜_左右,宜為5_〜5_〇。若5子 、右刀子里太大,鹼剝離性或乾膜貼合性會有變差的傾6。 者’為了提高電鑛核附著藥液耐性、防止雷射加工時的熱變形或^ 136 201146113 動控制,亦可導入交聯點。 關於主要樹脂的組成,將以下⑻與(b)物質聚合便可得 ) 刀子中至夕具有1個聚合性不飽和基的羧酸或 ° 5 ·· ^ ^ 0 85f ί ^ 200°-231190 9 2001 二上:報。關於⑻物質,例如:(甲基)丙烯酸、富馬酸、桂 猫ί、伊康酸、馬來酸酐、馬來酸半醋、丙稀酸丁酉旨等, 了早獨使用,亦可組合2種以上使用。關於(b) 14二·J-V、以保持在電鍍步驟中的耐性、硬化膜的可彎曲性等各種特 性的方式選擇即可。具體而言,有甲基丙稀酸甲醋匕 Ϊ基異醜、㈣雜⑽、編烯 類ί。另二曰、?基丙稀酸2_經乙醋、甲基丙烯酸2_經丙醋 另相有醋酸乙烯料的乙烯醇的 1 婦或可聚合的苯乙烯衍生辦。另外在分子 =和 =羧,酸酐,合也可製得。再者,以能夠3 ίί; 將产i美、Ί聚合物的單體巾勒具健數不飽和基的單體,並 ^ ί樹;tii其,基、乙職等反應性官能基^ ί 羧基的聚合物的重量。里,其中具有1當量的 溶性或電鑛前處理i耐容媒或其他組成物的相 時,剥離性合右似m降低的傾向。另夕卜當酸當量太高 〇二聰生曰有降低的傾向。另外w單體的組成比率為5〜兀質量 易用靖著驗㈣性或是可輕 可塑劑當作枯著性賦予材‘再’可考慮用 劑。具體而言,例如:料祕ϋ 了 ^各種耐性可添加交聯 婦酸異丙醋、T基丙稀酸曰、甲基丙烯酸乙醋、甲基丙 酸第三丁醋、甲基丙二:酸第二丁醋、子基丙烯 尹工乙S曰、甲基丙烯酸2_羥丙酯類等。另 137 201146113 外還有醋酸乙烯s旨等的乙烯醇的賴、甲基 合的苯乙稀衍生物等。另外利用在分子中具有:玆 Γ了匕述賴献單體反應轉料的射 早f?亦可包含其他二種以上的光聚合性單體。關於單 烯酸酯、或聚丙二醇二甲基丙稀酸酯、聚乙二醇二丙 fm ^ ^ ^§iSI ^^ ^ ^ 酯…新甲基丙稀酸醋、甘油三甲基丙稀酸 二:酸酯、三羥甲基丙烷三環氧丙基醚三甲 二甲其齡二氧化丙稀驗三甲基丙稀酸醋、2,2 —雙(4 子Α ^梳妒五乙氧基苯基)丙烧、含有胺基甲酸醋類的多官能 外’亦可為上述料體或綱反應的寡聚物 ιίί,有填料。填料並無特別限定,具體而言,例如: 二=匕矽、虱氧化鋁、氫氧化鎂、碳酸鈣The fat, the present vinyl ruthenium resin, the benzoic acid, the urethane acetal resin can be used for the specific example, such as the 曰 特 特 2 2 2 2 2 - 23119 ; Z-2_51, JP-A-212262, Japan = The dry film of the fat composition is fully cured, and the sheet g = shadow type DFR, for example, which is manufactured by Asahi Kasei Co., Ltd. In addition, for other swellable resin coatings, for example, a resin containing = as a main component (for example, Yoshikawa Chemical Co., Ltd. = "NAZDAR229") or υ = LEKTRACHEM Co., Ltd. Miscellaneous"). (For example, the swellability __, the resin (4) float or emulsion coating is applied to the surface of the substrate by a conventional thief method or a stick _, or a vacuum laminator or the like is formed on the branch plate. ❾DFR 占 占 = = = = = = = = = = = 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The photoresist material of the film is also the following material. The necessary characteristics of the photoresist material constituting the resin film, for example, (绝缘) in the catalyst-separating step described later, the insulation of the impregnated resin film is formed. The liquid of the substrate (electric recording core-attached chemical solution) has high resistance; (2) in the film removal step described later, for example, the insulating substrate on which the sap is formed is immersed in the test liquid. In the step, the resin film (photoresist) can be easily removed; (3) the film forming property is high; (4) the dry film (DFR) is more compatible; (5) the storage property is higher, etc. The attached liquid, although detailed later in the text, is in the case of, for example, an acidic Pd ~~Sn colloidal catalyst system. Acid value 1 to 2 φΗ) solution. In addition, in the case of an alkaline Pd ion catalyst system, the catalyst is weakly alkaline to the catalyst. 135 201146113 The resistance must be known, and the adhesion to the plating core is resistant, which means that when the photoresist is film-forming. = Responsibility does not ^ Bu, this is not the = knife know, the thickness of the photoresist film is 1 ~ ι 〇 左右 惟 惟 惟 惟 惟 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 « « The photoresist film can be easily removed by ί ΐ. The water solubility is about 1~10%, and the treatment temperature is room temperature ~ thief and 10 mils. - It is usually treated by dipping or _, but not limited to this. Μ is 1~ In order to form a photoresist on the insulating material, a film is formed = ί: a uniform film that is trapped. In addition, although the thin medium = 疋 is used for the sake of simplicity, the adhesion is required at the time of bonding. It cracks because the bendability does not decrease. The composition of the dry film is not separated, the fat composition is mainly composed of the main resin (the adhesive tree can be added with a polymer, a monomer, a filler or other additives, etc.), and at least the pot is also formed into a knife. The direct-bond type polymer II, etc. can also be grafted to branch. Off = molecular weight is about ~ _, preferably 5_~5_〇. If 5, right knife is too large, alkali stripping Or the dry film adhesion may be deteriorated. 6. In order to improve the resistance of the nuclear deposit of the electric ore, to prevent thermal deformation during laser processing, or to control the movement, it is also possible to introduce cross-linking points. The composition of the resin can be obtained by polymerizing the following materials (8) and (b). A carboxylic acid having a polymerizable unsaturated group in the knife or the celsius. 5 ·· ^ ^ 0 85f ί ^ 200°-231190 9 2001 On: newspaper. For the (8) substances, for example, (meth)acrylic acid, fumaric acid, guinea ί, itaconic acid, maleic anhydride, maleic acid half vinegar, butyl citrate, etc., used alone or in combination 2 More than one kind. (b) 14 II·J-V may be selected in such a manner as to maintain various properties such as resistance in the plating step and flexibility of the cured film. Specifically, there are methyl methacrylate methyl sulfonate, sulfhydryl amide, (tetra) hetero (10), and methacrylate. The other two,? Acrylic acid 2_ by vinegar, methacrylic acid 2_ by propylene vinegar Another phase of vinyl acetate with vinyl alcohol 1 or a polymerizable styrene derivative. In addition, in the molecule = and = carboxylic acid, acid anhydride, can also be obtained. Furthermore, it is capable of stimulating a monomer having a strong number of unsaturated groups, and a reactive functional group such as a base or a cleavage group; The weight of the polymer of the carboxyl group. Among them, in the case where one equivalent of the solubility or the pre-treatment of the electric ore is resistant to the medium or other composition, the peeling property tends to decrease as the m decreases. In addition, when the acid equivalent is too high, 〇二聪生曰 has a tendency to decrease. In addition, the composition ratio of the w monomer is 5 to 兀. The ease of use (4) or the light plasticizer can be considered as a dryness imparting material. Specifically, for example, the secret of the material is: various cross-linking can be added with cross-linked vinegar vinegar, T-based bismuth acrylate, methacrylic acid vinegar, methacrylic acid third butyl vinegar, methyl propyl hydride: Acid second butan vinegar, sub-based propylene Yingong B S 曰, 2-hydroxypropyl methacrylate and the like. In addition, 137 201146113 includes a vinyl alcohol lysine, a methylated styrene derivative, and the like. Further, it is also possible to use in the molecule: it is also possible to include two or more kinds of photopolymerizable monomers. About monoenoate, or polypropylene glycol dimethyl acrylate, polyethylene glycol dipropyl fm ^ ^ § iSI ^ ^ ^ ^ ester ... new methyl acrylate vinegar, glyceryl trimethyl acrylate Two: acid ester, trimethylolpropane triepoxypropyl ether, trimethyl dimethyl acrylate, trimethyl acrylate vinegar, 2, 2 - bis (4 Α 妒 妒 妒 pentoxide Phenyl)propane burned, polyfunctional external amide containing amino carboxylic acid vines may also be an oligomer of the above-mentioned material or reaction, and has a filler. The filler is not particularly limited, specifically, for example: bismuth, bismuth aluminum oxide, magnesium hydroxide, calcium carbonate

酉文鎂、硼酸鋁、有機填料等。另外光阻的厚度 ;L 者為佳。可使小,切= 准亦可在为政時使其碎裂,並過濾除去粗粒。 南丨、if?蝴,例如:光聚合性樹月旨(光聚合引發劑广聚合防止 ^者色域染料、顏料、發色系顏料)、熱聚合引 質或胺ms旨等的交聯鮮。 減基物 在加工程序中,例如,有時會使用雷工 時’必須利用雷射對光阻 工 :;=r準分子雷射或w-雷=ί== Jiff波長’使用對該波長的吸收率較高的材料,ί可提ί ,,波35 W4倍高讀波266nm f倍 是較佳的選擇。另-方面,有時使用吸收率 138 201146113Magnesium magnesium, aluminum borate, organic fillers, etc. In addition, the thickness of the photoresist; L is better. It can be made small, cut = can also be broken when it is in politics, and filtered to remove coarse particles. Nippon, if?, for example, photopolymerization tree (photopolymerization initiator broad polymerization to prevent color gamut dyes, pigments, chromophoric pigments), thermal polymerization primers or amines . Subtraction of the substrate in the processing program, for example, sometimes when using the mine, 'must use the laser to the photoresist:; = r excimer laser or w-ray = ί == Jiff wavelength' using the wavelength The material with higher absorption rate, ί 可提ί, wave 35 W4 times high reading wave 266nm f times is the better choice. Another aspect, sometimes using the absorption rate 138 201146113

Sv好光光:如始當使用W吸收率較低的光阻時,由於 1像田射先的吸收率,優點各有不同,故宜因廄d4=,w 使用雷射光吸收率經過調整的光阻。料j故且因應狀況, &lt;電路圖案形成步驟&gt; 電路圖案形成步驟係在絶緣基材K1上形成電路 开πίίϊΐϊ,部的方法並無特別限定。具體而言,例如,在 Κ2的絶緣基材K1上,從該樹脂覆膜Κ2的外Ϊ 械加工,形成具備所期望之形狀以及深度 γ 高精度的細微電路時,宜使用雷射: 加工,便可猎由改變雷射輸出等方式,自由調整切削深度 :、, t該電,圖案形成步驟係利用雷射加卫形成電路圖 時’便能夠以高精度形献細微的電路, 選擇^ 藉,變雷射的輸出等,便可輕易調整切削深度等 路溝槽K3的深度此點來看亦為較佳的選擇ί i材成制連制的貫通孔,並將電容埋^絶緣 尨田=田關於壓型加卫,宜使用例如在奈米印刷的技術領域令所 使用翻法軸電路_部的步科,_沖2=^开3 電路圖案部,故為較佳的選擇。 跡便了 U形成 孔κΓ若^可 方電Γ^Κ3上設置用來形成介層孔的貫通 ,内2孔用,貫通孔。然後,對所形成之 施 鍍,便可形成介層孔或内介層孔。 @ e…电鮮冤 利用該步驟,便可限定出該電路溝槽K3的形狀 貫通孔Κ4的徑長以及位置等的電路圖案部的形狀。另外' 139 201146113 圖案形成步驟’只要挖掘得比該樹脂覆膜K2的厚 亦可挖掘超過該樹脂覆膜Κ2的厚度,或貫通絶緣基了’惟 另外,利用該步驟,便可使填料K11在電路 面露出。然後,若利用雷射加工這種方法形成電路 ^ Κ3的露出面突出的方式形成 係絶緣基^的内部層受到雷射加工所形成13 J内Ji:外部。然後’由於不對硬化之絶緣基材κι的二 後實施無電解電錢,故可使絶緣基材K1的内部與電路層 該電路圖案形成步驟所形成之電路溝槽Κ3等的= 圖H 寬度並無特別限定。另外,當使用雷射加工時,亦可开^官 在20μπι以下的細微電路。因此,當該電路圖 ^ 〇 =下=分’ _«要細微加工的天線電路科 :二度’在利用填滿電鍵消除== ===的叙下’錢為電路層κΐ3的深度。 驟’係在該電路溝槽Κ3的表面以及該樹脂覆膜Κ2 的表面上披覆電鍍觸媒或其前驅物的步驟。此時,在已 2的情況下,貫通孔Κ4㈣表面也會被€綱媒或其前驅物所披 »亥電_媒或其前驅物Κ5,係在該電鍍處理步驟巾 在if成無轉€賴的雜上形成無電解_膜而3 *备牡°魏觸媒’只要朗習知的無電解魏關媒即可,i他 限定。另外,亦可預先披覆電鍍觸媒的前驅物,並在相m if ΐί之後使電鍍觸媒生成。_電鍍觸制具體例,例如··金 錄0、銀(Ag傅,或是使該等金屬生成的前驅物。 關於披伋電鍍觸媒或其前驅物K5的方法,例如:用在 〜3的酸性條件下可進行處理的酸性pd — Sn膠狀溶液進行處理之 140 201146113 '灸合液進行處理的方法。具體而言,例如以下的方法。 面上所附^的形以及貫通孔K4的絶緣基材κι的表 既定的日=匕ii界==的溶液(清潔劑、調和劑)中進行 劑進行軟細心t因應而要,用過硫酸鈉—硫酸系的軟姓刻 寸在絶緣ϊΐίΓϋ為主要成分的職液巾進行使氣化物離子吸 亞錫盘ΐίΐ 表的預浸處理。之後,再浸潰於含有氯化 媒膠廿值1〜3的酸性Pd—如膠狀物等的酸性電鍍觸 ΐίί rPd以及Sn。鎌,在所吸眺氣化亞錫 觸產媒生氧1Sv good light: If the light absorption with lower absorption rate is used at the beginning, the advantages are different due to the absorption rate of the first field, so it is better to use the laser light absorption rate adjusted due to 廄d4=, w Light resistance. In the case of the material, the circuit pattern forming step is formed on the insulating substrate K1 by a circuit pattern forming step, and the method of the portion is not particularly limited. Specifically, for example, in the insulating substrate K1 of the crucible 2, when a fine circuit having a desired shape and a high depth γ is formed by external processing of the resin coating 2, laser processing is preferably used. You can freely adjust the depth of cut by changing the laser output, etc., t, the electric power, the pattern forming step is to use the laser to form the circuit diagram when you use the laser to form a fine circuit, select ^ l, By changing the output of the laser, etc., it is easy to adjust the depth of the groove K3 such as the depth of cut. This point is also a better choice for the connection of the through hole, and the capacitor is buried and insulated. In the field of press-type reinforcement, it is preferable to use, for example, in the technical field of nano-printing, the step of using the flip-flop circuit _ part, the _ punch 2 = ^ open circuit pattern portion, which is a preferred choice. The traces are formed. U is formed. Holes κ Γ ^ 可 方 方 方 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 上 。 。 Then, by forming the plating, a via hole or an inner via hole can be formed. @e...Electric fresh 冤 With this step, the shape of the circuit groove K3 can be limited. The shape of the circuit pattern portion such as the diameter and position of the through hole Κ4. Further, the '139 201146113 pattern forming step' may be excavated to a thickness larger than the thickness of the resin coating layer 2, or may penetrate the insulating layer. However, by using this step, the filler K11 can be made The circuit surface is exposed. Then, if the exposed surface of the circuit ^ Κ 3 is formed by laser processing, the inner layer of the insulating layer is formed by laser processing to form J J: external. Then, since the electroless electricity is not applied to the hardened insulating substrate κι, the inside of the insulating substrate K1 and the circuit layer can be formed by the circuit pattern forming step of the circuit trench Κ3, etc. There is no special limit. In addition, when laser processing is used, a fine circuit of 20 μm or less can be opened. Therefore, when the circuit diagram ^ 〇 = lower = minute ' _ « the antenna circuit to be fine-machined: second degree 'under the use of filled-in-key elimination == ===, the money is the depth of the circuit layer κ ΐ 3 . The step of coating the plating catalyst or its precursor on the surface of the circuit trench 3 and the surface of the resin film 2 is carried out. At this time, in the case of 2, the surface of the through-hole 4 (4) will also be covered by the medium or its precursor, and the precursor of the electroplating process will be in the process of the electroplating process. Lai's miscellaneous forms an electroless _ membrane and 3 * prepared ° ° Wei catalyst 'as long as the well-known electroless Wei Wei media can be, i he is limited. In addition, the precursor of the plating catalyst may be pre-coated, and the plating catalyst may be generated after the phase is ΐί. _Specific examples of electroplating, for example, gold recording 0, silver (Ag Fu, or a precursor for forming these metals. For the method of coating the plating catalyst or its precursor K5, for example: used in ~3 The treatment of the acidic pd-Sn gel solution which can be treated under acidic conditions 140 201146113 'Method of treating the moxibustion liquid. Specifically, for example, the following method. The shape of the surface and the through hole K4 The insulating substrate κι is given in the solution of the established day = 匕 ii boundary == solution (cleaning agent, blending agent), and the agent is subjected to soft and careful t, and the soft sodium sulfate-sulfuric acid is used in the insulation ϊΐ Γϋ For the liquid wipe of the main component, the pre-dip treatment of the vaporized ion-absorbing tin-plated sheet is carried out, and then the acidity of the acidic Pd such as a gel containing the chlorinated medium colloidal value of 1 to 3 is immersed. Plating touch ίί rPd and Sn. 镰, in the suction of gasification of stannous contact with the production of oxygen 1

Sn t鍍觸雜溶液,可朗f知_性抑- 電梦程序亦可採用市售使用酸性電賴媒膠狀溶液的 “司所序,例如:RdimandHaaS電子材料股份有 理的iL卜’ ΐ觸馳驟賊在離_金肺狀溶射進行處 膜Si性ίϊ^ΐ除去步驟中的既定液體為驗性溶液,該樹脂覆 液的㈣_度宜在以下’對該驗性溶 媒撼造方法’該樹脂覆膜在以酸性條件進行處理的觸 剝離,在該觸媒披覆步驟之後的以鹼性溶液進 ί ϊϊ:ί ί ϊ中被剝離。因此’能夠在觸媒披覆步驟中正確地 二二ϊ:ί解電鍍膜的部分’並在電鍍觸媒或其前驅物彼覆 通孔^4由披覆處理,便可猶電路溝槽Κ3的表面、該貫 其前驅It 以及該樹脂覆膜Κ2的表面上披覆電鑛觸媒或 141 201146113 &lt;覆膜除去步驟&gt; 覆膜除去步驟係從實施過該觸媒披覆步驟的絶緣基材K1將該 樹脂覆膜K2除去的步驟。 除去該樹脂覆膜K2的方法,並無特別限定。具體而言,例如: 用既定溶液(膨潤液)使該樹脂覆膜K2膨潤之後,從該絶緣基材K1 將該脂覆膜K2剝離的方法;用既定溶液(膨潤液)使該樹脂覆膜 K2膨潤,且使其一部分溶解之後,從該絶緣基材K1將該樹脂覆膜 K2剝離的 +方法;以及用既定溶液(膨潤液)將該樹脂覆膜K2溶解除 去的方法等。關於該膨潤液,只要是能夠使該樹脂覆膜Κ2膨潤者 即可,其他並無特別限定。另外,該膨潤或溶解,可採用使該樹脂 覆膜Kj所披覆的該絶緣基材K1在該膨潤液中浸潰經過既定時間 的方法等。然後,亦可在浸潰咖超音波照射以提高除去效率。另 外,在使其膨潤而將其剝離時,亦可輕輕用力將其剝除。 ,遠覆膜除去步驟,宜為在用既定液體使該樹脂覆膜K2膨潤之 後,或用既定液體使該樹脂覆膜!^2 一部分溶解之後,再從該絶緣 基將該樹脂覆膜K2剝離的步驟。若利用該等製造方法,便 比較容易從該絶緣基材將該樹脂覆膜剝離。藉此,更容易在絶緣 材上形成高精度的電路。 、土 另外,該覆膜除去步驟亦宜為用既定液體將該樹脂覆膜溶解 t的步驟。若利用該等製造方法,便比較容易從該絶緣基材將該接^ 脂覆膜除去。藉此,更容易在絶緣基材上形成高精度的電路。Λ —…另外,就使用該膨潤性樹脂覆膜作為該樹脂覆膜Κ2的情况推 行説明。 現 ,於使該膨潤性樹脂覆膜Κ2膨潤的液體(膨潤液),只要使 不^實質上讓該絶緣基材κι以及該電鑛觸媒或其前驅物Κ5八^Sn t plating contact solution, can be known _ sexual inhibition - electric dream program can also be used in the commercial use of acidic electric solvent gel solution of the "sister order, for example: RdimandHaaS electronic materials shares reasonable iL Bu" The thief is in the process of removing the _ gold lung-like spray film. The predetermined liquid in the removal step is an experimental solution, and the (4) _ degree of the resin coating liquid is preferably in the following 'the method for preparing the test solvent' The peeling of the resin film under the acidic condition is peeled off in the alkaline solution after the catalyst coating step. Therefore, it can be correctly in the catalyst coating step. The second part: ί the part of the plating film 'and the plating catalyst or its precursor, the through hole ^4 is covered by the coating, the surface of the trench Κ3, the precursor It and the resin film The surface of the crucible 2 is coated with an electric ortho-catalyst or 141. 201146113 &lt;Step of removing the coating film&gt; The step of removing the coating film is a step of removing the resin coating film K2 from the insulating base material K1 subjected to the catalyst coating step. The method of removing the resin coating film K2 is not particularly limited. Specifically, for example, : a method in which the resin film K2 is swollen by a predetermined solution (swelling liquid), and then the resin film K2 is peeled off from the insulating substrate K1; the resin film K2 is swollen with a predetermined solution (swelling liquid), and After the partial dissolution of the resin film K2 from the insulating substrate K1, a method of removing the resin film K2, and a method of dissolving and removing the resin film K2 with a predetermined solution (swelling solution), etc. The resin film Κ2 may be swelled, and the other is not particularly limited. Further, the swell or dissolve may be such that the insulating substrate K1 coated with the resin film Kj is immersed in the swell solution. The method of time, etc. Then, it is also possible to improve the removal efficiency by immersing the coffee ultrasonic wave. In addition, when it is swelled and peeled off, it can be peeled off with light force. The far film removal step, Preferably, after the resin coating film K2 is swollen with a predetermined liquid, or a part of the resin coating film is dissolved by a predetermined liquid, the resin coating film K2 is peeled off from the insulating substrate. Manufacturing method is easier The insulating substrate is peeled off from the resin film, whereby it is easier to form a highly precise circuit on the insulating material. In addition, the step of removing the film is preferably a step of dissolving the resin film with a predetermined liquid. According to these manufacturing methods, it is relatively easy to remove the grease film from the insulating base material, whereby it is easier to form a high-precision circuit on the insulating substrate. In addition, the swelling is used. In the case where the resin film Κ2 is used as the resin film Κ2, the liquid (swelling liquid) which swells the swellable resin film Κ2 is not required to substantially make the insulating substrate κι and the electric ore. Catalyst or its precursor Κ5 eight^

或溶解而只會讓該膨潤性樹脂覆膜Κ2膨潤或溶解的液體即可了 I 他並無特別限定。另外,宜使用讓該膨潤性樹脂覆膜艮2膨潤: 易剝離之程度的液體。該等膨潤液,可根據膨潤性樹脂覆膜κ各 種類,厚度選擇較適當者。具體而言,例如:當膨潤性樹脂覆腺^ 二烯系彈性體、丙烯酸系彈性體以及聚酯系彈性體等的彈性、由 腹、將 142 201146113 (a)在刀子^具有至少1個聚合性不飽和基的緩酸或酸軒的至少1 種以亡的單體以及(b)可與該(a)單體聚合的至少1種以上的單體聚 合所付到的聚合物聽或含有該聚合減麟触喊物 另外,當在觸媒披覆步驟中使用以上述酸性條件進行處理的雷 鍍程f時’細性樹脂覆膜K2宜由在酸性條件下膨潤度在嶋以 I 宜在40%以下,在驗性條件下膨潤度在5〇%以上的例如: 烯,彈性體以及聚sl系彈性體等的彈性體、將⑻ ” /、至乂 1個聚合性不飽和基的羧酸或酸酐的至少1種以 ΐ的單體以及(b)可與該(碑體聚合的至少!種以上 含有該聚合物樹脂的樹驗成物、含有竣i的 的潤性樹脂覆膜,利用PH值12〜14 波照射。另外,亦可“需為要:=:二可在浸潰時用超音 的广例如:將膨潤性樹脂 法。另外,為了提高f 无定時間的方 僅膨潤而未剝離時,亦可根據需照射。另外, &lt;電鍍處理步驟 &gt; 以示 上實覆膜Κ2除去之後的該絶緣基材幻 σ亥無電解電鑛處理的方法, 其前驅物Κ5的絶緣基材 於:二有電鍍觸 ㉝觸媒或其前驅物K5的部分上析出 is(Ai)t 〇 ' ^(Go)'Further, it is not particularly limited as long as it dissolves and only swells or dissolves the swellable resin film Κ2. Further, it is preferable to use a liquid which swells the swellable resin film 艮2 to such an extent that it is easily peeled off. These swelling liquids can be selected according to the type of the swellable resin coating κ, and the thickness is preferably selected. Specifically, for example, when the swellable resin is coated with an elastomer, an acrylic elastomer, a polyester elastomer, or the like, it has at least one polymerization in the knives of 142 201146113 (a). A polymer which is obtained by polymerizing at least one of a sulphuric acid or a sulphuric acid, and (b) a polymer which can be polymerized with at least one or more monomers polymerized with the (a) monomer In addition, when the laser plating treatment is performed in the above-mentioned acidic conditions, the fine resin coating film K2 should be made of a swelling property under acidic conditions. 40% or less, for example, an elastomer such as an olefin, an elastomer or a poly-sl-type elastomer, having a degree of swelling of 5% or more under the test conditions, and (8) /, to a polymerizable unsaturated group. At least one of a carboxylic acid or an acid anhydride, and (b) a resin composition film containing the polymer resin containing at least one or more of the polymer resin and a turmeric resin film containing 竣i Use a PH value of 12 to 14 waves. In addition, you can also "need to be: =: two can be used in the immersion of the supersonic wide, for example: Further, in order to increase f, the film may be swelled only when it is not swelled, and may be irradiated as needed. Further, &lt;Plating treatment step&gt; The insulating group after removal of the solid film Κ2 is shown In the method of processing the material XIihai electroless ore, the insulating substrate of the precursor Κ5 is deposited on the part of the electroplating contact 33 catalyst or its precursor K5 is(Ai)t 〇' ^(Go)'

的選擇。另外,當含有Ni時,耐健優J較J 143 201146113 較佳的選擇。 的膜厚並無特別較。具體而言,例如:o.i 心Γ ί且為㈣左右。尤其,當使該電路溝槽K3的深度 ^ 厚1厚’便可姆形成剖面積較大的金屬配線。此 時便可使金屬配線的強度提高,是較佳的作法。 利用電鱗理步驟’在絶緣基材κ 的部分上析出無電解電鍍臈Κ6。 f 槽的部分上析ί ί ,f 不欲形成電路溝 = 細微電路’也不會在隣接電路之間殘留多餘的電 鑛膜ϋ此’I夠防止短路或遷移等問題的發生。 屏ϋ解魏紅6的部分絲層Κ13。亦即,電路 i電體声妙電f觸ί或其前驅物Κ5與無電解電鍍膜從所構成的 的ΐί 述步驟形成電路層Κ13,故電路層Κ13 ^ !面不透過其他膜層與填料K11接觸而形成電 Γ因此麟得到較高的密合性。另外,在圖示的離樣中, K13比絶緣基材K1更突出,’惟亦可使電路層 基材κι之内 將電路層K13❾一部分埋設在絶緣 &lt;檢査步驟&gt; 基板㈣的製造方法巾’更可包含檢査步驟,並使今 ΐίΓίί2含有蘇性物f,並在該覆膜除去步驟之後,利用該 ^含有螢膜是否徹底除去。亦即,使該樹脂皮膜 ㈣物1,以在覆膜除去步驟之後,對檢査對象面照射 外光,利用螢光性物質的發光,便可檢查出有無覆膜 X f膜除去瑕疲位置。故在電路基板的製造方法中,可形 成線寬以及線間隔非常狹小的電路層KG。 雪’當'線寬以及線間隔非常狹窄時’在相隣 部之間’亦可能會有本來應被除去的樹脂覆 Μ未被凡王除去而殘留少許的情況發生。另外,在電路圖 144 201146113 ΐ被ί去的獅細的碎片也能會進人卿成之電路圖案部而殘 ΐ電路圖案部之間殘留樹脂覆膜Κ2時,在該部^上會形 電解電鑛膜Κ6,而可能成為遷移或短路等問題的原^曰二 ί部^殘留樹脂覆膜κ2的碎片時,也會成為 ,路層Κ13 _熱性不良或傳導損失的原因。在該 的使樹脂細含有螢紐㈣’在細除去步驟之後,對覆 =去面照射既定發光源使樹脂覆膜殘留部分因為螢光性物質Ϊ ίί位#此便可檢查出覆膜是否未被徹底除去或覆膜未被徹底除去 常狹拉如Ϊ 3〇所示的’當形成線寬以及線間隔非s Choice. In addition, when Ni is contained, it is preferable to be better than J 143 201146113. The film thickness is not particularly comparable. Specifically, for example: o.i heart Γ ί and (4) or so. In particular, when the depth of the circuit trench K3 is made thicker than 1 thick, a metal wiring having a large sectional area can be formed. At this time, it is preferable to increase the strength of the metal wiring. The electroless plating ruthenium 6 is deposited on the portion of the insulating substrate κ by the electric scale step. The part of the f slot is analyzed ί ί , f does not want to form a circuit trench = the fine circuit ' does not leave excess electrode film between adjacent circuits. This is enough to prevent problems such as short circuit or migration. The screen dispels part of the silk layer 魏13 of Weihong 6. That is, the circuit i electric power f-touch or its precursor Κ5 and the electroless plating film form the circuit layer 从13 from the formed steps, so that the circuit layer 不13 ^! surface does not pass through other layers and fillers K11 contacts to form electricity, so the lin gets a higher adhesion. Further, in the illustrated off-sample, K13 is more prominent than the insulating base material K1, but it is also possible to embed a part of the circuit layer K13 in the circuit layer substrate κι in the insulation. [Inspection step] Manufacturing method of the substrate (4) The towel may further include an inspection step and cause the sputum f to be contained, and after the film removal step, whether or not the fluorescing film is completely removed. In other words, the resin film (four) 1 is irradiated with external light to the surface to be inspected after the film removal step, and the presence or absence of the film X f film to remove the fatigue position can be detected by the light emission of the fluorescent material. Therefore, in the method of manufacturing a circuit board, the circuit layer KG having a line width and a very narrow line interval can be formed. The snow 'when' the line width and the line spacing are very narrow 'between the adjacent portions' may also occur when the resin coating which should be removed is not removed by the king. In addition, in the circuit diagram 144 201146113 ΐ 狮 的 的 的 的 也 也 也 也 也 也 也 也 卿 卿 卿 卿 卿 卿 卿 卿 卿 卿 卿 卿 卿 卿 卿 卿 卿 卿 卿 卿 电路 电路 电路 电路 电路 电路 电路 电路 狮 狮 狮 树脂 树脂 树脂When the mineral film Κ6 is likely to be a fragment of the residual resin film κ2 which may be a problem such as migration or short-circuit, it may become a cause of poor thermal conductivity or conduction loss. After the fine-removing step of the resin is contained, the coating is irradiated with a predetermined light source to make the remaining part of the resin film, because the fluorescent substance is # ί # Being completely removed or the film is not completely removed, as shown by the 狭 3〇, when the line width and line spacing are not

K8之間,可能會有樹脂覆膜未被完全除去U :專3下,會在該部分上形成無電解電鍍膜K6,進而導U 轉粒下,爾備上述檢査步 ^便月惠查出覆膜疋否未被徹底除去臈未被徹絲去的部 隸伽來說明使樹脂覆膜含有螢紐物質,利用螢 可用於出覆膜除去不良情況的檢査步驟的説明圖。 θ、^=細査步驟之樹脂皮膜κ2所含有的螢光性物質,口要 會顯現出發光特性者即可,其他並無特^限 疋具體例如.FlUoresceme、E〇sine、Pyr〇nine G 等。 止益電^電/膜此’除去檢查到發光的部分,便可防 題的分上。藉此’便可防止遷移或短路等問 &lt;去膠渣處理步驟&gt; 施之ί IS路基板K1G的製造方法中’在該電鐘處理步驟實 去膠、杏卢,在填滿電鍍實施前或實施後,亦可更包含實施 膠渣處理步驟。實施去雜處理,便可將益電i電 ’又膜所附者的多餘樹脂除去。另外,在預定為具備所製得之電路基 145 201146113 板的多層電路基板的情況下,可將該絶緣基材的未形成無電解電鍍 膜的部分的表面粗糙化,以提高其與該電路基板的上層的密合性。 ,者,亦可對介層,底實施去膠渣處理。藉此,便可除去介層^所附 著1多餘樹脂。另外,該去膠渣處理並無特別限定,可使用習知的 去膠渣處理。具體而言,例如:浸潰於過錳酸溶液的處理。 經過上述步驟’便可形成如圖29(E)所示之電路基板κιο。 另外,在該電路圖案形成步驟中,由於挖掘超過該樹脂覆膜 K2的厚度,故可在如圖31所示的絶緣基材κι的較深部位形成由 無電解電鑛膜K6所構成的電路層K13。 具體而言,如圖31(A)所示的,可在複數導電層之間於彼此深 度不同的位置(圖中的無電解電鍍膜K6a〜K6d)形成電路。此 巧處理在電路溝槽K3的中途停止,無電解電鍍膜從形成相同 厚度。另外’無電解電鑛膜從形成電路溝槽K3的底面與側面。 另外’如圖31⑼所補,在絶緣基材〇上 度的電路賴K3錢,以_無電觸域轉輯路&amp;槽^ ,方式形成電路層K13(ll中的無電解電鍍膜K6e〜K 如 的情況下,當電鍍到達表面時便不會繼 ϊΐ 可選擇適合該等處理的電賴液實施。該 :樣二由於較易形成剖面積較大的電路,故可使電 加,是較佳的態樣。 J电孔今里靖 产,每一電路層Κ13設定電路溝槽Κ3的深 月間早的方式製得深度(高度Τ)不同的電路層Κ13。 〔立體電路基板的製造方法〕 圖。圖32係用來說明製造立體電路基板論的各步驟的示意剖面 及5亥讀處理步驟,以製造立體電路基板勝若_該等 146 201146113 法’便較易形成跨越高低差的電路層Κΐ3。 首先,如圖32(A)所示的,在具有高低差部分的立 =的表面上職_脑K2。糾,該步於覆膜二步 該立體絶緣紐K51可伽f㈣來觀立體 =脂成雜,並無制限定。鮮成形體糊 生產效率較佳。關於用來製得樹脂成形體的樹脂㈣料== ^丄聚碳酸輯脂、聚醯胺樹脂、各種聚醋樹脂、聚酿= =、聚苯晴脂、氰酸g旨樹脂、苯並嚼嗪樹脂、雙馬曰來 ^胺樹脂等。然後,在本發财’樹脂成雜 外,在圖32中省略記載填料Ku。 $射+Kl卜另 =樹脂覆膜K2的形成方法並無特別限定。具體而言,例如, /等在平面狀電絲板K1G的實施例巾的形成方法相_形成方法 /接著,如圖32(B)所示的,以該樹脂覆膜K2的外表 形成具有比騎脂覆膜Κ2的厚度更深之深度的電路辦^ 电路圖案部。電路圖案部的形成方法並無特別限定。呈^ 、 ^ ’與該電路基板Κ10的態樣相同的形成方法等。藉由“= ^ Κ3等的電路圖案部,限^出利用無電解電鍍形成無電^膜 ,分,亦即,限定出形成電路層Κ13的部*。 H = 當於電路随碱㈣。 4步驟相 接著、’如圖3,2(Q所示的’在該電路溝槽K3等的電路圖 勺表面上以及未形成該電路圖案部的該樹脂覆駭2的表 ^ 電鑛觸媒或其前驅物Κ5。披覆電錢觸媒或其前驅物Κ5的方^ 特別限定。具體而言,例如’與在該電路基板㈣的相同: 方法等。另外’該步驟相當於觸媒披覆步驟。利用該等媒 理’便可如圖32(C)所示的’在電路溝槽Κ3料電路圖 面上以及齡細Κ2的表©上披覆電侧媒或其前驅物。、、 接著’如圖32(D)所示的’從該立體絶緣基材K51將 舜 膜K2除去。藉此’便可在該立體絶緣基材K51的該電路g曹曰= 147 201146113 ^的,路随部的形成部分的表面上㈣電賴媒或其前驅物 祕f「方ϋ覆在該樹脂覆臈幻的表面上的電鍍觸媒或其前 ft玄樹月旨覆膜Κ2之上的狀態下,與該樹脂覆膜 除去該樹脂覆膜κ2的方法並無特別限定。 ^而η列如’與該電路基板Κ10的態樣相同的方法等。 該步驟相當於覆膜除去步驟。 续其所示的,對已除去該樹脂覆膜κ2的立體絶 、貫她…電解電錢。藉此,在殘存該電鑛觸媒或其前驅 上軸無電職賴Κ6。亦即,在軸有該電路溝槽 或邊貫通孔Κ4的部分上形成作為電路層Κ13的 Κ6。無電解電鏟膜Κ6 _成方法並無特別限定。具體而言又〇膜 的態樣相同的形成方法等。另外,該步驟相當 藉由上述各步驟’如圖32(E)所示的,便可形成在三維形狀 立體絶緣基材Κ51上設置電路層Κ13的立體電路基板⑽作^ 路基板Κ10。如是形成之立體電路基板編,即使在絶緣基材幻 ίίΪΐ之電路層Κ13的線寬以及線間隔很狹窄,也能夠以高精 度形成電2配線。另外,如是形权立體電路基板⑽,即使對於 基板具有高低差部之面,也能夠正確且簡易地形成電路。 、 〔第6實施態樣〕 本發明更關於一種具備絶緣層、電氣電路以及介層的電路 板。 土 一行動電話等攜帶式資訊終端裝置、電腦以及其周邊裝置、各 資§fl豕電製品等的電氣裝置快速地朝高度功能化發展。伴於 對於該等電氣裝置上祕載之電絲㈣言,其電氣電路^也祐 要求更進一步高密度化。為了滿足該等電氣電路L2的高密度化 要求,吾人希求一種能夠正確地形成線寬以及線間隔(相瞵^番 路L2與電氣電路L2之間的部分的寬度)更狹窄的電氣電路方 法0 關於衣作5亥專電路基板,近年來,有利用半導體裝置擎造巧 148 201146113 iW(Chemieal Mechanieal 馳h)法(參照日本特開 2旎^報)’在絶緣層丨的電路溝槽4内形成電氣電路2。 署所f的實細巾,|先對於在® 42(A)卿之背面側設 圄的絶緣層U的表面侧實施雷射加工,形成如 電路龍L4。辦,更職路溝槽L4的底部實施 Π成從電路溝槽L4的底部到第-電氣電路L7的表 的繼_㈠输L7的表面 围49=。’用去膠逢處理液處理該絶緣層U的表面側,以除去如 ^=^細。糊雜嶋U咖嶋化 解雷’如圖MW所示的’對該絶緣層U的表面側實施益電 解電鑛處理以形成無電解電賴L1q。接著,如圖的, m電解電賴㈣喊面實施電 ' L 4^mLL5 L3, 鑛層形成第二電氣電耻2。另外,電鑛層更以 後盍、,色緣層L1的整個表面的方式堆積。Between K8, there may be a resin coating that has not been completely removed. U: Specialized 3, an electroless plating film K6 will be formed on this part, and then U will be transferred to the grain, and the above inspection step will be detected. Whether or not the film is not completely removed, and the portion which has not been removed by the wire is used to explain the step of inspecting the resin film to contain the fluorescent material, and the firefly can be used for removing the film. θ, ^ = the fluorescent substance contained in the resin film κ2 in the step of scrutiny, the mouth should have a luminescent characteristic, and the others are not particularly limited. For example, FlUoresceme, E〇sine, Pyr〇nine G Wait. The power of the electric motor/film is removed, and the part that is illuminated is removed, so that the problem can be prevented. By this, it is possible to prevent migration or short-circuiting, etc. &lt;De-slag treatment step&gt; In the manufacturing method of the IS-channel substrate K1G, 'in the electric clock processing step, the glue is removed, and the apricot is finished. The pre- or post-implementation process may further include performing a desmear treatment step. By performing the de-doping treatment, the excess resin of the battery can be removed. Further, in the case of a multilayer circuit substrate which is intended to have the obtained circuit substrate 145 201146113, the surface of the portion of the insulating substrate where the electroless plating film is not formed may be roughened to improve the circuit substrate The adhesion of the upper layer. Alternatively, the degreasing treatment may be performed on the interlayer and the bottom. Thereby, it is possible to remove the excess resin attached to the interlayer. Further, the desmear treatment is not particularly limited, and a conventional desmear treatment can be used. Specifically, for example, a treatment of immersing in a permanganic acid solution. Through the above steps, the circuit substrate κιο shown in Fig. 29(E) can be formed. Further, in the circuit pattern forming step, since the thickness of the resin film K2 is excavated, a circuit composed of the electroless ore film K6 can be formed at a deep portion of the insulating substrate κι as shown in FIG. Layer K13. Specifically, as shown in Fig. 31(A), an electric circuit can be formed between the plurality of conductive layers at positions different in depth from each other (electroless plating films K6a to K6d in the drawing). This processing is stopped in the middle of the circuit trench K3, and the electroless plating film is formed to have the same thickness. Further, the electroless ore film is formed from the bottom surface and the side surface of the circuit trench K3. In addition, as shown in Fig. 31 (9), the circuit on the insulating substrate is K3, and the electroless plating film K6e~K is formed in the circuit layer K13 by means of _ no electric contact domain transfer path &amp; In the case of electroplating, when the electroplating reaches the surface, it will not be able to select the electrolyzed liquid suitable for the treatment. This: Because the sample 2 is easier to form a circuit with a larger cross-sectional area, it can be electrically added. Good appearance. J electric hole Jinli Jing production, each circuit layer Κ 13 set circuit trench Κ 3 deep moon early method to obtain depth (height Τ) different circuit layers Κ 13. [Method of manufacturing three-dimensional circuit substrate] Figure 32 is a schematic cross-sectional view showing the steps of manufacturing a three-dimensional circuit substrate and a five-step processing step for manufacturing a three-dimensional circuit substrate. These 146 201146113 methods are easier to form a circuit layer across the height difference Κΐ 3 First, as shown in Fig. 32(A), on the surface with the height difference, the position of the head = K2. Correction, the step is two steps of the film, the three-dimensional insulation button K51 can be gamma f (four) to view the stereo = The fat is mixed and has no limitation. The fresh formed body paste has better production efficiency. Resin used in the preparation of resin molded body (4) == ^ 丄 polycarbonate, polyamide resin, various polyester resin, poly brew = =, polystyrene, cyanate g resin, benzene chew In the case of the present invention, the filler Ku is omitted in Fig. 32. The formation method of the resin film K2 is not particularly limited. Specifically, for example, the method of forming the embodiment of the planar wire plate K1G, the method of forming the film, and then, as shown in FIG. 32(B), the appearance of the resin film K2 is formed. The circuit pattern portion having a depth deeper than the thickness of the grease-coated film 2 is not particularly limited. The method of forming the circuit pattern portion is the same as that of the circuit board 10 and the like. By the circuit pattern portion of "=^ Κ3, etc., it is limited to form an electroless plating film by electroless plating, that is, to define a portion where the circuit layer Κ13 is formed. H = When the circuit follows the alkali (four). Then, as shown in Figure 3, 2 (Q shows 'on the surface of the circuit diagram of the circuit trench K3 and so on and unshaped The surface of the resin pattern portion 2 of the resin coating 2 or its precursor Κ5 is particularly limited to the surface of the electric money catalyst or its precursor Κ5. Specifically, for example, The same as the substrate (4): method, etc. In addition, 'this step is equivalent to the catalyst coating step. Using these media' can be as shown in Figure 32(C) on the circuit surface of the circuit trench and the age The surface of the crucible 2 is covered with an electric side medium or a precursor thereof. Then, 'as shown in Fig. 32(D), the crucible film K2 is removed from the three-dimensional insulating substrate K51. The circuit of the insulating substrate K51 g 曰 147 147 201146113 ^, on the surface of the forming portion of the road (4) electric etchant or its precursors, "the plating on the surface of the resin covered illusion" The method of removing the resin coating film κ2 from the resin coating film is not particularly limited in a state in which the catalyst or the front ft is applied to the coating film 2 . And η is listed as the same method as that of the circuit board 10, and the like. This step corresponds to the film removal step. Continuing with the above, it is necessary to remove the resin film κ2 from the three-dimensional... In this way, there is no electricity in the residual electrocatalyst or its precursor. That is, the crucible 6 as the circuit layer 13 is formed on the portion of the shaft having the circuit trench or the side through hole 4 . The electroless shovel film Κ 6 _ is not particularly limited. Specifically, the formation method of the same aspect of the ruthenium film and the like. Further, in this step, as shown in Fig. 32(E), the three-dimensional circuit substrate (10) on which the circuit layer 13 is provided on the three-dimensional shape insulating substrate 51 can be formed. In the case of the formed three-dimensional circuit substrate, even if the line width and the line interval of the circuit layer 13 of the insulating substrate are narrow, the electric wiring can be formed with high precision. Further, in the case of the three-dimensional circuit board (10), even if the surface of the substrate has a step, the circuit can be formed accurately and easily. [Sixth embodiment] The present invention further relates to a circuit board including an insulating layer, an electric circuit, and a dielectric layer. Portable information terminal devices such as mobile phones, computers, peripheral devices, and electrical devices such as §fl豕 electrical products are rapidly becoming highly functional. Accompanied by the wire (4) on the secrets of these electrical devices, the electrical circuit is also required to be further increased in density. In order to satisfy the high density requirements of the electric circuits L2, it is desirable to have an electrical circuit method capable of accurately forming a line width and a line spacing (the width of a portion between the phase difference L2 and the electric circuit L2). In the circuit trench 4 of the insulating layer 近年来, the semiconductor device is used in recent years, in the circuit trench 4 of the insulating layer 利用 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 An electrical circuit 2 is formed. The thin towel of the department f is first subjected to laser processing on the surface side of the insulating layer U provided on the back side of the ® 42 (A) to form a circuit dragon L4. To do, the bottom of the job-removing trench L4 is implemented from the bottom of the circuit trench L4 to the surface of the first-electric circuit L7, which is the surface of the _(1)-transform L7. The surface side of the insulating layer U is treated with a degumming treatment liquid to remove fine particles such as ^. The surface of the insulating layer U is subjected to an electrolysis treatment to form an electroless electrolytic circuit L1q. Then, as shown in the figure, the m electrolysis (4) shouts the face to implement the electric 'L 4^mLL5 L3, and the ore layer forms the second electric shame 2. Further, the electric ore layer is deposited so as to be the entire surface of the color edge layer L1.

的雷3 ’ 1°圖42(F)所示的’卿CMP法將絶緣層L1的表面側 的藉歧鱗層U絲糾衫二魏電路U 在绐於上述問題點’本發明之目的在於提供—雜夠降低嗖置 的電路溝彻並與介層連接的電氣電路的傳送損失的^ ^發日月人檢討在習知技術中電氣電路L2的傳送損 時“ί^4為在利用去膠逢處理除去通孔^内的膠渣J的同 43所^ t·的内面也會因為去膠渣處理液而粗糙化。因此3 化,:果,板二電吝氣電•路U與絶緣層U的界面被粗糙 電孔電路L2便產賴域失。根據這悔現,本發明 149 201146113 人在專心致力研究之後,便完成本發明。 本發明之電路基板具備絶緣層L1、設置在該絶緣層L1之上的 電氣電路L2以及介層L3 ’在該絶緣層L1之上形成有電路溝槽L4 以及與該電路溝槽L4連通的通孔L5,該電氣電路L2設在該電路 溝槽L4内,同時該介層L3設在該通孔L5内,該電路溝槽L4的 内面的表面粗糙度比該通孔L5的内面的表面粗糙度更小。 在本發明中’該通孔的内面的表面粗糙度與電路溝槽的内面的 表面粗链度的比(通孔的内面的表面粗糖度/電路溝槽的内面的表 面粗糙度)宜在1.05〜200的範圍内。 另外’在本發明中’該電路溝槽L4的内面的J1S (JapaneseThe thunder 3 '1°Fig. 42(F) shows the 'clear CMP method to the surface of the insulating layer L1 by the squaring layer U wire correcting the second circuit U in the above problem' Providing - the transmission loss of the electrical circuit that reduces the circuit of the device and the electrical circuit connected to the layer, and the evaluation of the transmission loss of the electrical circuit L2 in the prior art " ί ^ 4 is in use The inner surface of the same strip of the slag J in the through hole ^ will be roughened by the desmear treatment liquid. Therefore, 3,: fruit, plate 2 electric 吝 gas, electric road U and The interface of the insulating layer U is depleted by the rough via circuit L2. According to this repentance, the present invention has been completed by the researcher 149 201146113. The circuit substrate of the present invention is provided with an insulating layer L1. An electric circuit L2 and a dielectric layer L3' on the insulating layer L1 are formed with a circuit trench L4 and a through hole L5 communicating with the circuit trench L4. The electrical circuit L2 is disposed in the circuit trench. In the groove L4, the interlayer L3 is disposed in the through hole L5, and the surface roughness of the inner surface of the circuit trench L4 The surface roughness of the inner surface of the through hole L5 is smaller. In the present invention, the ratio of the surface roughness of the inner surface of the through hole to the surface roughness of the inner surface of the circuit groove (the surface roughness of the inner surface of the through hole / The surface roughness of the inner surface of the circuit trench is preferably in the range of 1.05 to 200. Further, in the present invention, the inner surface of the circuit trench L4 is J1S (Japanese)

Industrial Standards ;日本工業規格)B〇601 : 2001所規定之表面粗 链度(鼻術平均粗縫度)Ra宜在0.01〜〇.5μηι的範圍内。 另外’在本發明中’該通孔L5的内面的JIS Β0601 : 2001所 規定的表面粗糙度(算術平均粗糙度)Ra宜在0.5〜2μιη的範圍内。 亦即,本發明的第6實施態樣包含以下技術内容。 請求項6— 1. 一種電路基板,具備絶緣層、設置在該絶緣層上 的電氣電路以及介層,在該絶緣層上形成有電路溝槽以及與該電路 溝槽連通的通孔,該電氣電路設置在該電路溝槽内,同時該介層設 置在該通孔内’該電路溝槽的内面的表面粗糙度比該通孔的内面的 表面粗糖度更小。 請求項6—2.如請求項6—丨所記載的電路基板,其中,該通 孔的内面的表面粗糙度與電路溝槽的内面的表面粗糙度的比(通 孔的内面的表面粗糙度/電路溝槽的内面的表面粗糙度)在丨〇5〜 200的範圍内。 請求項6—3.如請求項6—1或6—2所記載的電路基板,其 中,該電路溝槽的内面的JISB0601 :2〇〇1所規定之表面粗糙度Ra 在0.01〜0.5μηι的範圍内。 請求項6 — 4.如請求項6—〗乃至請求項6一3中任一項所記载 的電路基板,其中,該通孔的内面的j][SB〇6〇1 : 2〇〇1所規定的表 面粗链度Ra在〇,5〜2μπι的範圍内。 150 201146113 右根據本發明’藉由降低絶緣層的電路溝槽的内面的表面粗链 度’使電路溝槽與該電路溝槽的内侧的電氣電路的界面平滑化,便 可降低電氣電路的傳送損失。 以下,説明本發明的實施態樣。 圖35表示本發明之電路基板的構造的一個實施例。該電路基 板具有依序堆疊第一絶緣層L6、第一電氣電路!;7、絶緣層L1(第 二絶緣層L1)、電氣電路L2(第二電氣電路L2)的構造。 第一絶緣層L6的表面很平坦,在該第一絶緣層L6的表面上 堆疊設置第二電氣電路L2。第二絶緣層L1以在第一絶緣層L6的 表面上與該第一絶緣層L6接觸的方式堆疊,因此第一電氣電路L7 埋設於第二絶緣層L1内。在第二絶緣層L1的表面上形成電路溝 槽L4,在該電路溝槽L4内設置第二電氣電路L2。另外第二絶緣 層L1形成有使第一電氣電路L7與第二.電氣電路L2連通的通孔 L5’在該通孔L5内設有使第一電氣電路L7與第二電氣電路^導 通的介層L3。 在該電路基板中,該電路溝槽L4的内面的表面粗糙度比該通 孔L5的内面的表面粗糙度更小。因此,電路溝槽L4的内面與設 ^該,路溝槽L4内的第二電氣電路L2之間的界面的平滑性變 尚’藉此’第二電氣電路L2的傳送損失變小。 為了使該第一電氣電路L2的傳送損失充分降低,電路溝槽L4 的内面的表面粗糙度宜在0.01〜0·5μηι的範圍内,更宜在、〇 〇5〜 〇.4μηι的範圍内。像這樣使電路溝槽L4的内面的表面粗糙度在 0.5μιη以=,尤其使其在〇 4μιη以下,便可充分提高電路溝槽 的内面與第二電氣電路[2之間的界面的平滑性,使傳送損失明 降彼。 ” 另外,通孔L5的内面的表面粗糙度宜在〇5〜2μιη的範圍内, 更宜在0.5〜1.5师的範圍内。此時,通孔υ的内面的構 電鍍層)與第二絶緣層U的密合力提高,使電路基板^ 勺罪度徒南。 另外,该通孔L5的内面的表面粗糙度與電路溝槽L4的内面 151 201146113 =的表雜糙維在⑽ 1.2〜50的範 以下,表示該電路基板的 的内面的表面_度/電路溝槽L4的 ‘圍内,更宜. 該等電路基板可用適當的方法製造 製造方法的實施例。 、 〔第一的製造法〕 基板==^絲魏基板邮-魏妓。魏明該電路 ,環 ITaT^I^ ° ^ ^ ^ 雙盼A认氧树月曰、雙紛F型環氧樹脂 ,氧樹脂、苯__環氧樹脂、炫基以 =,方 聯,_環氧樹脂、萘型環氧樹脂、倍環戊二烯型環曰笼 齡if i有苯断蛾基之料族_縮合產物的環氧化物、三\ί 2使;„性的上述環氧樹脂、含ί樹: 曰·外,就忒環氧樹脂以及樹脂而言,可單獨使用上述各产羞 樹脂以及樹脂,亦可組合使用2種以上。早蜀史用之各王风 =’當用上述各樹月旨構成基材時,一般而言,為了硬化,备 t硬化劑°關於_化劑,只要是可以使用的硬化劑即可' 並…特別限?。具體而言’例如:二氰二胺、苯酚系硬化劑、 酉夂-糸硬化劑、氨基三嗓祕系硬化劑、氰酸醋樹脂等。該笨盼系 152 201146113 μ!!如:祕型、芳烧型、_型等硬化劑。為了更進-步 過鱗變性的苯嘯旨或是經過^二 亦可=^=上關於該硬化劑’可單獨使用上述各硬化劑, =外雖然並無特別限定,惟由於係利用雷射加工形 Π工=填料會露出,填料的凹凸可提高電錢與_ 1。 氧化itfci機微粒子的材料,具體而言,例如:氧化雖l/)、 Ϊ _卿、細 2 3)、五氧化錄(St&gt;2〇5)、胍鹽、删酸辞、鉬化合物、硬月t ro f ; ^^〇»〇x〇H)2) ^ τΛ^母等。關於該無機微粒子’可單獨使用上述無 η立子,亦可組合使用2種以上。該等無機微粒子,由於 性、相對介電常數、阻燃性、粒徑分布、色 t期;輪祿瞻嫩了谢 :传用到i度填充化之目的。另外雖然並無特別限定,惟 二〇〇;在第一絶緣層L6的厚度以下的填料,宜使用平均 拉^ _〜1〇μιη的填料’更宜使用平均粒徑〇.〇5师〜5μιη的填料。 另外,該無機微粒子,為了提高在該第一絶緣層L6中的分散 偶合劑進行表面處理。另外,該第—絶緣層L6,為 亥無機微粒子在該第一絶緣層L6巾的分散性,亦可含有石夕 =合劑。該魏偶合舰無特舰定。具體而言,齡:環氧石夕 系、胺基魏系、乙稀基魏系、苯乙烯基石夕烧系、 人二Ξ觸減魏系、丙觸氧基魏系、鈦酸齡等的魏偶 合劑專。關於該魏偶合劑,可單獨使用上述魏偶合劑,亦可組 153 201146113 合使用2種以上。 另外,該第-絶緣層L6 ’為了提高該無機微粒子在 、=L6中的分散性,亦可含有分散齊卜·散劑並無特別限定。 八體而s,例如:烷醚系、山梨酸酯系、烷基聚醚胺系、古八 劑等。關於該分散劑,可單獨使用上述分散劑,柯^合使 用2種以上。 關於該有機微粒子’具體而言,例如:橡膠微粒子 A 卜^第—絶緣層L6的祕並無制限定。具體而言,可 為片材、_、預浸材以及三維形狀的成 ° ^ Μ的厚度並無特別限定。具體而言,若是片材寺薄膜第; 活,例如宜為10〜500μιη,更宜為2〇〜2〇〇_左右。、^當 -絶,層L6亦可含有二氧化雜子#的錢微粒子。 &quot; 雷踗Ϊ7該·^iff ^的表面上戦第—魏_L7。第一電氣 |路7可利用減去法、加成法等的習知電氣電路形成方法形】製 如圖36⑷所*的’在第一絶緣層L 層U。藉此,第一電氣電隹^第:絶緣 緣層L1係由例如與第一絶缘# 層L1内。第二絶 另外,第1二τ ’的各種有機基板所形成。 佈樹=ί;ίί==在^絶緣層L6的表面上塗 溶,’,用以往多層電路基板的ί造: 脂、⑽酸樹脂、聚酿亞胺樹脂等的樹脂溶液;曰別 宜利用該加熱加齡驟^硬化/使用預浸材當作絶緣基材時, 接者’如圖36 (B)所干沾如咕 脂覆膜L8(覆膜形成步驟/。、、’在第二絶緣層L1的表面上形成樹 該樹脂覆臈L8,只要县At釣―港+ 其他並無特舰⑦。在覆離去步射除去者即可,‘ 、奴而έ,例如,可用有機溶劑或鹼性溶液輕* 154 201146113 易洛解的可溶型樹脂’或由可用後述既定液體(膨潤液膨潤的樹脂 ϊΐί的,性樹脂覆膜L8等。其中,從容易正確地除去的觀點 ^看特別宜使聊雛樹脂細L8。另外,關於該躺性樹脂覆 予L8 ’例如,對該液體(膨潤液)的膨潤度宜在5〇%以上。另外 月:潤性巧脂覆膜L8 ’除了相對於該液體(膨潤液)實質上不會溶解但 t因f=而容易f該第二絶緣層L1表面剝離的樹脂覆膜L8之 丄也以相對於該液體(膨濁液〉會膨潤,更會至少一部分, 容解而容易從該第二絶緣層U表面剝離的樹脂 兮第液)會溶解,且會因為該溶解而容 易攸料—絶緣層L1表面剝離的樹脂覆膜L8。 在兮ίΪίίί 3的形成方法並無特別限定。具體而言,例如: 之的佈可形成樹脂覆膜U的液狀材料 .〇〇 /{^ ' ' /或疋在支持基板上塗佈該液狀材料之後將乾 Ϊ後Si成脂覆膜U轉印到第二絶緣層U的表面上的方法 習姜时液狀材料的方法並無制限定。具體而言,例如: 1知的紅轉塗佈法或棍塗佈法等。Industrial Standards; Japanese Industrial Standards) B〇601: 2001 The surface roughness (the average roughness of the nose) Ra is preferably in the range of 0.01 to 〇.5μηι. Further, in the present invention, the surface roughness (arithmetic mean roughness) Ra defined by JIS Β0601: 2001 of the inner surface of the through hole L5 is preferably in the range of 0.5 to 2 μm. That is, the sixth embodiment of the present invention includes the following technical contents. Claim 6 - 1. A circuit board comprising an insulating layer, an electrical circuit disposed on the insulating layer, and a via, on which a circuit trench and a via hole communicating with the circuit trench are formed, the electrical The circuit is disposed in the trench of the circuit, and the interlayer is disposed in the via hole. The surface roughness of the inner surface of the trench is smaller than the surface roughness of the inner surface of the via. The circuit board of claim 6, wherein the ratio of the surface roughness of the inner surface of the through hole to the surface roughness of the inner surface of the circuit trench (surface roughness of the inner surface of the through hole) / The surface roughness of the inner surface of the circuit trench is in the range of 丨〇5 to 200. The circuit board according to claim 6 to 1, wherein the surface roughness Ra specified by JIS B0601:2〇〇1 of the inner surface of the circuit trench is 0.01 to 0.5 μm. Within the scope. The circuit board according to any one of claims 6 to 3, wherein the inner surface of the through hole is j][SB〇6〇1 : 2〇〇1 The specified surface roughness Ra is in the range of 〇, 5 to 2 μm. 150 201146113 Right according to the present invention, by reducing the surface roughness of the inner surface of the circuit trench of the insulating layer, the interface between the circuit trench and the electrical circuit inside the circuit trench is smoothed, thereby reducing the transmission of the electrical circuit. loss. Hereinafter, embodiments of the present invention will be described. Fig. 35 shows an embodiment of the structure of the circuit substrate of the present invention. The circuit board has a first insulating layer L6 and a first electrical circuit stacked in sequence! 7. The structure of the insulating layer L1 (second insulating layer L1) and the electric circuit L2 (second electrical circuit L2). The surface of the first insulating layer L6 is very flat, and a second electrical circuit L2 is stacked on the surface of the first insulating layer L6. The second insulating layer L1 is stacked in such a manner as to be in contact with the first insulating layer L6 on the surface of the first insulating layer L6, and thus the first electrical circuit L7 is buried in the second insulating layer L1. A circuit trench L4 is formed on the surface of the second insulating layer L1, and a second electrical circuit L2 is provided in the circuit trench L4. In addition, the second insulating layer L1 is formed with a through hole L5' for connecting the first electrical circuit L7 and the second electrical circuit L2. The through hole L5 is provided with a medium for conducting the first electrical circuit L7 and the second electrical circuit. Layer L3. In the circuit substrate, the surface roughness of the inner surface of the circuit trench L4 is smaller than the surface roughness of the inner surface of the through hole L5. Therefore, the smoothness of the interface between the inner surface of the circuit trench L4 and the second electrical circuit L2 in the path trench L4 is reduced, whereby the transmission loss of the second electrical circuit L2 becomes small. In order to sufficiently reduce the transmission loss of the first electrical circuit L2, the surface roughness of the inner surface of the circuit trench L4 is preferably in the range of 0.01 to 0.5 μm, more preferably in the range of 〇 5 to 4 4 μm. Thus, the surface roughness of the inner surface of the circuit trench L4 is set to 0.5 μm, and particularly to 〇4 μm or less, the smoothness of the interface between the inner surface of the circuit trench and the second electrical circuit [2 can be sufficiently improved. , so that the transmission loss will be reduced. In addition, the surface roughness of the inner surface of the through hole L5 is preferably in the range of 〇5 to 2 μm, more preferably in the range of 0.5 to 1.5 divisions. At this time, the inner plating layer of the through hole 电镀 is electrically insulated) and the second insulation The adhesion of the layer U is increased, so that the circuit substrate is sinful. In addition, the surface roughness of the inner surface of the through hole L5 and the inner surface of the circuit trench L4 151 201146113 = the surface roughness is (10) 1.2 to 50 Hereinafter, it is preferable that the surface of the inner surface of the circuit board is in the range of the surface of the circuit board L4. The circuit board can be manufactured by an appropriate method. [First Manufacturing Method] Substrate==^丝魏基板邮-Wei Wei. Wei Ming The circuit, ring ITaT^I^ ° ^ ^ ^ Double-see A oxygen tree, 双, F-type epoxy resin, oxygen resin, benzene __ ring Oxygen resin, dazzle base =, square, _ epoxy resin, naphthalene epoxy resin, sesquicyclopentadiene type 曰 曰 cage age if i benzene 蛾 moth base material family _ condensation product epoxide, 3. The above-mentioned epoxy resin and eucalyptus: 曰·, in terms of epoxy resin and resin, the above-mentioned products can be used alone. Shame Resin and resin may be used in combination of two or more. Each of the kings used in the early history = 'When the base material is used to form the base material, generally, in order to harden, the hardener can be used as long as it is a usable hardener. ...special limit? . Specifically, for example, dicyandiamide, a phenolic curing agent, a cerium-lanthanum curing agent, an aminotriazine-based curing agent, a cyanic acid resin, and the like. The stupidity is 152 201146113 μ!! Such as: secret type, aromatic type, _ type and other hardeners. In order to further advance the benzene of the scale-denatured or pass the ^2, the above-mentioned hardeners may be used alone for the hardener, and although there is no particular limitation, the laser is used. Finished work = the filler will be exposed, the bumps of the filler can increase the electricity and _ 1. The material of the oxidized itfci machine microparticles, specifically, for example, oxidation, l/), _ _ qing, fine 2 3), pentoxide (St > 2 〇 5), strontium salt, sulphuric acid, molybdenum compound, hard Month t ro f ; ^^〇»〇x〇H)2) ^ τΛ^mother. The above-mentioned inorganic granules can be used singly or in combination of two or more kinds. These inorganic microparticles are due to their properties, relative dielectric constant, flame retardancy, particle size distribution, and color t-phase; Further, although it is not particularly limited, it is preferable that the filler having an average thickness of _~1 〇μηη is preferably used in the filler below the thickness of the first insulating layer L6. 更5 ~5μιη Filler. Further, the inorganic fine particles are subjected to surface treatment in order to improve the dispersion coupling agent in the first insulating layer L6. Further, the first insulating layer L6 may have a dispersibility of the inorganic fine particles in the first insulating layer L6, and may also contain a mixture of stones and a mixture. The Wei coupled ship has no special ship. Specifically, the ages are: epoxidite, amine-based Wei, ethylene-based Wei, styrene-based smelting, human diterpene, Wei, hexyloxy, titanate, etc. Wei coupling agent special. The Wei coupling agent may be used singly or in combination of two or more kinds of 153 201146113. Further, the first insulating layer L6' is not particularly limited as long as it has a dispersibility in order to increase the dispersibility of the inorganic fine particles in ?L6. Octa s, for example, an alkyl ether system, a sorbate system, an alkyl polyether amine system, an ancient eight agent, and the like. The dispersant may be used singly or in combination of two or more kinds. Specifically, the organic fine particles are not limited to the rubber fine particles A to the insulating layer L6. Specifically, the thickness of the sheet, the _, the prepreg, and the three-dimensional shape is not particularly limited. Specifically, if it is a film of the sheet temple, it is preferably, for example, 10 to 500 μm, more preferably 2 to 2 cm. , ^ When - absolutely, layer L6 can also contain dioxins # money particles. &quot; Thunder 7 ··^iff ^ on the surface of the first - Wei _L7. The first electric circuit 7 can be formed in the first insulating layer L layer U as shown in Fig. 36 (4) by a conventional electric circuit forming method such as a subtractive method or an additive method. Thereby, the first electrification layer L1 is made of, for example, the first insulating layer L1. Secondly, various organic substrates of the first two τ' are formed. Cloth tree = ί; ίί == coated on the surface of the insulating layer L6, ', using the conventional multilayer circuit substrate: resin, grease, (10) acid resin, poly-imine resin, etc.; When the heating age is increased and the prepreg is used as the insulating substrate, the connector is as shown in Figure 36 (B) as a resin film L8 (film formation step /.,, 'in the second insulation The resin layer 臈L8 is formed on the surface of the layer L1, as long as the county At-fishing-port + other has no special ship 7. It can be removed in the detachment step, ', slaves, for example, organic solvents or Alkaline solution light* 154 201146113 Easily soluble soluble resin', or a resin which is swelled by a swellable liquid, a resin film L8, etc., which is easy to remove accurately. It is preferable to make the resin L8. In addition, it is preferable that the lying resin is coated with L8', for example, the swelling degree of the liquid (swelling liquid) is preferably 5% or more. In addition, the moisturizing resin film L8' is removed. a resin which does not substantially dissolve with respect to the liquid (swelling liquid) but which is easily peeled off by the surface of the second insulating layer L1 due to f= The ruthenium of the film L8 is also dissolved in the resin 兮 liquid which is swelled with respect to the liquid (the swelling liquid is swelled, and at least a part thereof is easily dissociated from the surface of the second insulating layer U), and The resin film L8 which is peeled off by the surface of the insulating layer L1 is dissolved. The method of forming the resin layer L1 is not particularly limited. Specifically, for example, the cloth can form a liquid material of the resin film U. 〇/{^ ' ' / or 疋 coating the liquid material on the support substrate and then transferring the dried Si-forming film U onto the surface of the second insulating layer U The method is not limited, and specifically, for example, a known red transfer coating method or a stick coating method.

下。ΓϊΓϊϊϋ的厚度,宜在1〇呵以下,更宜在_以 、關於5亥树脂覆膜L8的厚度,宜在ο.ίμηι以上,更 且μΓη以上。當該樹脂覆膜L8的厚度太厚時,在竽雷故岡安 ,步驟中_雷射加卫或顺加 H ΐίι會有難以形成均勻膜厚的樹脂覆㈣的: 説明之 靖脂覆膜U,以較佳_備_旨覆虹8舉例 以雜樹脂_ U,宜使用對膨潤液的膨潤度在50% 州匕脂覆膜L8的形成方法並無特別限定’使用盘上违 树鄭8的形成方法相同的方法即可。具體而言二= 155 201146113 脂覆_的液狀材 浮液潤材料,例如,彈性體的懸 么共聚物等的二物性體,丙稀酸= 體’以及聚《彈性體等。若利用該 彈性體樹脂粒子的交聯度或膠化g度等特2 ΪΪ ί :!期望之膨潤度的膨潤性樹脂覆膜L8。 PH值而變彳==2^=別宜__依於膨潤液的 的液祕:伽料覆膜’藉由使賴職覆步驟中 步驟中的ΡΗ、值條件不同,便可在觸媒披覆 密合力,並在很高的 輕易地被剝離。/財的PH值之下使膨潤性樹脂覆膜L8 沾从°例如,當S_媒披覆步驟具備例如在PH值1〜3 牛^夂性電鑛觸媒膠狀溶液⑽性觸媒金屬膠狀溶液)中進行 ;=步驟’且該覆膜除去步驟具備在PH值12〜Η的範= 膜樹脂_ L8膨獅步驟時,該_性樹脂覆 膜L8對義性電賴娜狀驗轉潤度宜在_以下,更 10〇/Π二ΐ該驗性溶液的膨潤度宜在5G%以上,更宜在1〇〇% 以上,最好疋在500%以上。 關^等膨潤性樹脂覆膜L8,可使用例如:由具有既定量之 f 土的淨性體所形成的片材’用於印刷配線板的形成圖案用的乾膜 光阻(以下亦稱為DFR)中的級化性的雜齡彡型的光阻經過全 面硬化之後所制㈣材,或是熱硬化性級性顯翻片材等。 W關於具有羧基的彈性體的具體例,例如:包含具有鲮基體 J位作為共聚成分’使分子中具有絲的苯乙烯_丁二烯系共聚物 等的二稀系彈性體、丙騎g旨系共雜等的丙稀_彈性體以及聚 156 201146113under. The thickness of the crucible should be less than 1 〇, and it is more suitable for the thickness of the L8 resin coating L8, preferably above ο.ίμηι, and more than μΓη. When the thickness of the resin coating L8 is too thick, in the step of smashing, in the step of _ laser blasting or adding H ΐ ί ι, there will be a resin coating which is difficult to form a uniform film thickness (4): For example, it is preferable to use a resin _ U, and it is preferable to use a swelling degree of the swelling liquid at 50%. The method for forming the smear film L8 is not particularly limited. The formation method can be the same. Specifically, two = 155 201146113 A liquid material of a grease-coated material, for example, a two-component body such as a suspension of an elastomer, a acrylic acid = a body, and a poly elastomer. The swellable resin film L8 having a desired degree of swelling such as a degree of crosslinking of the elastomer resin particles or a gelation g degree is used. PH value changes = == 2 ^ = 宜宜 __ depending on the liquid secret of the swelling liquid: gamma coating 'by the step in the steps of the Lai step The cover is tight and is easily peeled off at a very high level. The pH of the swellable resin film L8 is stained under the pH value. For example, when the S_clay coating step is provided, for example, at a pH of 1 to 3, the electrocatalyst is a colloidal solution (10) of a catalytic metal. In the colloidal solution); = step 'and the film removal step is provided at a pH of 12 to Η = = film resin _ L8 swelling step, the _ resin film L8 for the sense of electricity The degree of conversion should be below _, and 10 〇 / Π ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ For the swellable resin film L8, for example, a sheet formed of a net body having a certain amount of f soil can be used as a dry film resist for forming a pattern of a printed wiring board (hereinafter also referred to as The graded, age-old type of photoresist in DFR) is fully cured (four) or thermosetting graded sheet. Specific examples of the elastomer having a carboxyl group include, for example, a di-semi-elastomer including a styrene-butadiene-based copolymer having a fluorene-based J-position as a copolymerization component and having a filament in a molecule. A total of isopropyl _elastomers and poly 156 201146113

酯系彈性體等。若利用該等彈性體,藉由調整 •狀㈣雜_酸當量、㈣度或狐料紐 .期望之鹼性膨潤度的膨潤性樹脂覆膜L8。彈性體中的羧A ls 剩彻。終酸當細每1當量峨 有ί基ΐ單體#的具體例’例如·’(甲基)丙稀酸、富馬酸、 桂皮S欠、巴旦酸、伊康酸以及馬來酸酐等。 關於該等具有絲的彈性體中的幾基的含 為二〇〜2_ ’更宜為⑽〜_。當酸當量太二以= f成物的相溶性會降低,導致對·前處理液的耐性會有 ^另外,當酸當量太大時,對雜水驗的獅性會有降低的傾 =,彈性體的分子量宜為!萬〜湖萬,更宜為2萬〜 分子量太大時剝離性會有降低的傾向,太‘ 欲維持膨潤性樹脂覆膜L8的厚度均勻很困難,且對電“二 理液的耐性也會有惡化的傾向。 ’又J处 另外,DFR以含有既定量之羧基的丙烯酸系樹脂、 ,、苯乙烯系樹脂、苯酚系樹脂、胺甲酸乙酯細脂等作‘樹脂成 含有光聚合引發綱級化性樹敝成物的#材。^於 该4 DFR的具體例,例如日本特開2_—231190號公^材日^ f f01 —201851號公報、日本特開平11-212262號公報所揭-^ 性樹脂組成物的乾膜經過全面硬化所得 =的 驗性顯翻⑧則物,旭化錢份修公g製的售的 松香要關脂覆膜L8,例如:含有絲且以 「nazd=9 ^月曰ίί列如,吉川化工股份有限公司製的 LEKyCHEM公司製「104F」)等。 U曰U列如, 你德性樹脂覆膜U,用習知的旋轉塗佈法或棍塗佈法等的淹 布機構將樹脂的懸浮液或乳狀液塗佈在絶緣基材表面上之後使^ 157 201146113 if 真ί疊合機等將形成於支持基板上的dfr貼合於絶緣 基材表面上之後使其全面硬化,便可輕易形成。 脂覆膜U ’除了上述的樹脂覆膜之外’還有以Τ =月日覆膜。例如’構成該樹脂覆膜u的光阻材料,還有以下的 材料。 的光阻材料的必要特性’例如:⑴在後述 縣⑽成翻旨賊L8找絲材的液體 ^電鍵核=樂液)的耐性較高;(2)在後述的覆膜除去步驟中,例 ^材浸餘鹼性謝的步 (琳(3顧繼;⑷乾膜 夜’雖然文後會有詳述,惟在例如酸性pd 从?1觸媒糸統的情況下’全部為酸性_值1〜2)水溶液。另 (pH值8=d 況下’觸媒賦予催化劑為弱驗性 慮m/曰,示此以外為酸性。由上可知,對電鑛核附著藥液的 :性j、須耐付住pH值i〜u,更宜财得住pH值W2。另^ ^得住,是指當光阻細縣浸潰於驗巾時 3 f光阻的魏。另外,—般而言,浸潰溫度 非^此^時間為1〜1〇分鐘,光阻膜厚為1〜1〇邮左右,惟並 覆f除去步騎使㈣雖獅藥液,賴文後會有 而言係細例如Na0H水溶液或碳酸财絲。 二^佳為pH值12到14,便可輕易除去光阻膜。Na〇H = ^度為1〜10%左右,處理溫度為室溫〜贼,處理時 ^ 1〇勿鐘,一般以浸潰或喷灑處理,惟並非以此為限。 為〜 為了在絶緣材料上形成光阻’成膜性也變得很重要。 H眼孔等缺_均勻薄膜。另外,雖然為了簡化製造步驟或'、= 失等會進行乾膜化,而為了確保易處理特性,薄 的。另外用疊合機(報子、真空)將經過乾膜化的光=. σ在、、,色緣材料上。貼合的溫度為室溫〜16(rc,壓力或時間則隨惫、。 158 201146113 如是,在貼合時便要求粘著性。因此,經過乾膜化的光阻也會兼具 防止雜質附著的功能,一般會形成用載體膜、覆蓋膜夾合戶^ 造’惟並非以此為限。 曰 關,保存性,能夠在室溫下保存當然是最好的,惟也必須要能 夠在冷藏、冷凍下保存。必須在該等低溫下乾膜的組成不合分離, 彎曲性不會降低而裂開。 θ 另外,關於該樹脂覆膜L8,例如由將⑻在分子中至少具有1 個聚合性不飽和基的羧酸或酸酐的至少i種以上的單體以及 與該⑻單體聚合的至少1種以上的單體聚合所得到的聚合物 或包含該聚合物樹脂的樹脂組成物所構成者。 σ 該樹脂組成物以該聚合物樹脂為必要成分當作主要樹脂, 寡聚物、單體、填料或其他添加劑。主要樹脂宜為具 =枝。關於該分子量,其算數平均分子量為 宜為漏〜5_。當奸量太小時,_的彎曲性 ^電鍍核附著藥液的耐性(耐酸性)會有降低的傾向。另外, 賴離性ϊ成為乾料祕合性會有變差的傾向:再 為了&amp;南電錢核的藥液耐性、抑制雷射加 控制,亦可導入交聯點。 丁 動 w主要树脂的該聚合物樹脂的組成’如上所述的,可將以下 ; (b)可與該(辟體‘ θ 20〇Τ ^ 2000-23Π90 (士甲,烯酸、富馬酸、桂皮酸、巴豆酸、伊庫酸、i來】二 來酸半醋、丙婦酸丁醋等,可單猶伟κ ,%木酉夂肝'馬 和美者,tit 非酸性且在分子中具有—個聚合性不飽 可ί 電鑛步驟中的.硬化膜的 酿、甲基丙ΐϊϊ的?而言,有甲麵物 甲基丙烯3文異丙酯、甲基丙烯酸正丁酯、甲 159 201146113 基丙烯酸第三丁醋、甲基丙烯酸第三丁醋、甲基丙烯酸2_經乙醋、 甲基丙烯酸2-羥丙酯類等。另外還有醋酸乙烯酯等的乙烯醇的酯 ,、甲基丙騎、苯乙㈣可聚合的苯乙烯衍生物等。另外利用在 二子中具有一個上述聚合性不飽和基的敌酸或酸酐的聚合也可製 知。再者,以能夠3維交聯的方式,在用於聚合物的單體中選出具 =數不飽和基料體,並將環氧基、絲、胺基、醯胺基、乙g 基4反應性官能基導入分子骨架。樹脂中所含有的缓基量的酸當量 f為100〜2_’較佳為则〜_。在此酸當量係指其中具有i當 基的聚合物的重量。當酸當量太低時,與溶職其他組成物 的相溶性或電鍍前處理液耐性會有降低_向。另外,當酸當量太 =’剝雜會有降低_向。另外⑻單體陳姐率為5〜7〇 質置%。 單體或絲物,只要是具有對電難附著藥液的耐性或是可 輕易用鹼除去者即可。另外為了提高乾膜(DFR)的貼合性, =塑著性賦予材料。再者,為了提高各種耐性可添加i 體而s,有τ基丙烯酸甲g旨、f基丙稀酸乙酯、甲基丙稀 j異丙,、甲基丙烯酸正獨、甲基丙烯酸m旨、$基丙稀酸 -Γϋ、甲基丙稀酸經乙醋、甲基丙稀酸2_經丙酯類等。另外 的乙烯醇的酯類、甲基丙烯腈、苯乙烯或可聚合 ίϊΓ的聚t也可製得。再者,亦可包含多官能性不飽和 。物。α亦可為上述單體或使單體反應的寡聚物的其中任一種 ^上ϊΐ體η亦可包含其他二_上的光聚合性單體。關於單 α · ,6_己一醇二甲基丙烯酸酯、卜4_環己二醇二甲美丙 ^酉旨j聚丙二醇二甲基丙烯_、聚乙二醇二甲基丙稀酸醋、 i f基丙職酯、甘油3基丙烯酸 又酞A —虱化丙烯醚三甲基丙烯酸酯、2,2 — -甲基丙烯氧基五乙氧基苯基触、含有胺基甲酸酯類的多$ 160 201146113 。糾,'村壯述的频錢單體反應的寡聚物 氫氧化銘、填t if料並無特別限定,例如:二氧化石夕、 氧化銘、氧ϋίπϊ弓、黏土、白陶土、氧化欽、硫酸鎖、 酸紹、有機填料蓉%冰I母、玻璃、欽酸卸、灰石、硫酸鎖、棚 料大小宜小者為ί。°可使〜_㈣’故填 在分散時使其碎裂,粗粒經過切割者,惟亦可 劑、=光f合性樹脂(光聚合引發劑)、聚合防止 皙科、顏料、發色系顏料)、熱聚合引發劑、環氧a物 貝或胺甲酸乙醋等的交聯劑等。 Mx d城基物 *射ίΐϊ明的印刷板加工程序中,有時會使用雷射加工,當使用 Γ 體雷射準分子雷射或UV—YAG雷射等。 種固有波長,使用對該波長的吸收率較高的材料田便可〇 ^⑽―彻雷射適合用於細微加工,雷射波長為 么问自波355nm、4倍高次諧波266nm,光材 的吸收率可望在观以上。 们寺波長 丄加’如® 36(Q所示的’將部分樹脂覆膜L8除去同時在該除 刀中更從第二絶緣層L1的表面將樹脂除去,以在第二絶緣層 L1上形成電路溝槽L4(電路溝槽形成步驟)。 、·曰 形成该電路溝槽L4的方法,並無特別限定。具體而言如. 在形成有該樹脂覆膜L8的第二絶緣層u上,從該樹脂覆膜u的 外表面側,實施雷射加工以及模切加工等的切削加工或壓型加工 =機械加工,以形成具備所期望之形狀以及深度的電路溝槽L4。 當欲形成高精度的細微電氣電路L2時,宜使用雷射加工。曰若利用 雷射加工,便可藉由改變雷射輸出以自由調整切削深度。另外, 於壓型加工,宜使用例如在奈米印刷的技術領域中所使用的利用细 微樹脂的壓型加工。 利用該步驟,限定出該電路溝槽L4的形狀、深度以及位置等 161 201146113 。该電路溝槽形成步驟所形成之電路溝槽L4的寬 度,在電氣電路L2 ii能夠輕易形成。另外,電路溝槽L4的深 成為本實施離偷=心第二絶緣層Li的高低差被消除的情況下’ 成為本貫f祕所形成之電氣電路U的深度。 L4 路賴L4時,奴加王條件’使該電路溝槽 mi度以在較佳的隨〜〇.5师的範圍内。 外♦面ί拙iL^D)所示的,在電路溝槽L4以及樹脂覆膜L8的 媒觸媒被覆步驟)。利用該等觸 脂覆膜L8的敕伽ί電路溝槽的内面以及未經過雷射加工的樹 覆膜L8的整録面上披覆電賴媒或其前驅物L9。 解電:驅物L9,係在該電鑛處理步驟中利用無電 而賦ΐ的^。電鍍膜UG的部位上形成無電解電鑛膜L10 即可,鑛觸媒,只要使用習知的無電解電鑛用觸媒 並在樹定。糾’亦可聽賴魏_的前驅物, 例,例ί 之後使賴觸媒生成。電_媒的具體 的前驅物 (Pd)、白金(pt)、銀(Ag)等,或是使該等金屬生成 =披覆電錢觸媒或其前驅物L9的方法 ί ^==下可進行處理賴請—%雜錄進行處S 灸^酉夂洛液進行處理的方法。具體而言,例如以下的方法。 面卜辦^將形成電路溝槽1^以及通孔乙5的第二絶緣層L1的表 劑接著’因應需要’用過硫酸納—硫酸系的軟钱刻 溶液ίϊίΐί理。然後,在pH值1〜2的硫酸水溶液或鹽酸水 以氣化亞ί 再進行酸洗。接著,浸潰於濃度αι%左右的 附在笛1水洛液等為主要成分的預浸液中進行使氯化物離子吸 化層L1之表社的紐處理。之後,再浸潰於含有氣 觸媒膠免且PH值1〜3的酸性Pd—Sn膠狀物等的酸性電鍍 ' ^ '合液以凝集並吸附Pd以及Sn。然後,在所吸附的氣化亞 162 201146113 ,與氣化把之間產生氧化還原反應(SnCl2 + PdCl2-&gt;SnCl4 + Pd|)。 藉此’析出電鍍觸媒亦即金屬鈀。 ,外’關於酸性電鑛觸媒膠狀溶液,可使用習知的酸性Pd_ Sn膠^大觸媒溶液等,亦可採用使用酸性電錢觸媒膠狀溶液的市售 電鏡長序。關於該等程序,例如:Rohm and Haas電子材料股份有 限公司所系統化販售者。 藉由該等觸媒披覆處理,便可在該電路溝槽L4的内面、該通 ^L5的内壁表面以及該樹脂覆膜L8的表面上披覆電鍍觸媒或盆 刖驅物L9。 '、 紐’如圖36(E)所示的,用既定液體將樹脂覆膜L8膨潤或溶 ^將其除去(覆騎妙驟)。藉由該轉,便可在加工所形 ί Ϊ溝槽L4的内面上殘留電鍍觸媒或其前驅物L9,並將除此 去。、樹脂覆膜L8的表面上所附著的電鑛觸媒或其前驅物L9除 用該樹脂覆膜L8的方法,並無特別限定。具體而t,例如: 液(膨酿)使該樹脂觀L8膨潤之後,從該第二絶緣層 膜旨覆膜U剝離的方法;用既定溶液(膨潤液)使該樹脂覆 部分溶解之後,彳卿二纟_L1將該樹 膨S3 Ιί:關於該膨潤液’只要是能夠使該樹脂覆膜U 娜錢_限定。糾,該_或轉,可採用使 既定/ί皮®的該第二絶緣層U在該膨敵中浸潰經過 效ΐ。^ ίίΐίΐ ’亦可在浸潰咖超音波照射以提高除去 另外關a Γ ^而將其剝離時,亦可輕輕用力將其剝除。 況進行說明 咖U,就使__性樹脂覆膜L8的情 不會==性=膜U膨潤的液體(膨潤液),只要使用 解上使該第一,、,色緣層U以及該電鑛觸媒或其前驅物L9分 只會讓該膨潤性樹脂覆膜U膨潤或溶_液體即; 其他並無特舰定。另外,宜使用讓該膨潤性樹脂覆膜u ^到 163 201146113 容易剝離之程度的液體。該等膨潤液,可根據膨潤性樹脂覆膜u 的種^員或J度選擇較適當者。具體而言,例如:當膨潤性樹脂覆膜 L8由一稀糸彈性體、丙烯酸系彈性體以及聚g|系彈性體等的 ,、將⑻在分子中具有至少1舞合性不飽和基峨酸或酸野的至 少1種以上的單體以及(b)可與該⑻單體聚合的至少i種以上 ,聚^所制的聚合物樹脂或含有該聚合物翻旨的翻旨組成物、含 有叛基的丙職純脂卿鱗,宜使關如農 氫氧化納水溶液等的驗性水溶液。 &quot;10/。左右的An ester elastomer or the like. When these elastomers are used, the swellable resin coating L8 of the desired alkali swelling degree is adjusted by adjusting the (four) hetero-acid equivalent, the (four) degree, or the fox material. The carboxyl group A ls in the elastomer is left. The final acid is as fine as 1% equivalent of ί ΐ ΐ monomer# specific examples 'for example, '(meth)acrylic acid, fumaric acid, cinnamon S owed, baldanic acid, itaconic acid, maleic anhydride, etc. . The content of several groups in the filament-containing elastomer is preferably 〇2~2'' (10)~_. When the acid equivalent is too much, the compatibility of the product becomes lower, and the compatibility of the pretreatment liquid will be increased. In addition, when the acid equivalent is too large, the lion's nature of the miscellaneous water test will be lowered. The molecular weight of the elastomer should be! 10,000 ~ Hu Wan, more preferably 20,000 ~ When the molecular weight is too large, the peeling property tends to decrease, too 'to maintain the thickness of the swellable resin coating L8 is uniform, and the resistance to the electric "two liquids will also In addition, in the case of J, the DFR contains an acrylic resin containing a predetermined amount of carboxyl groups, a styrene resin, a phenol resin, or a urethane fine resin as a resin. The specific material of the 4 DFR is disclosed in Japanese Unexamined Patent Publication No. Hei No. Hei No. Hei No. Hei No. 11-212262. -^ The dry film of the resin composition is fully hardened = the testability is turned over 8 times, and the rosin sold by Asahi Kasuga Koto is to be grease-coated L8, for example: containing silk and "nazd" =9 ^月曰ίί, such as "104F" manufactured by LEKYCHEM Co., Ltd., manufactured by Yoshikawa Chemical Co., Ltd.). U曰U, for example, your German resin film U, after coating a resin suspension or emulsion on the surface of an insulating substrate by a conventional drowning method such as spin coating or stick coating. When the dfr formed on the support substrate is bonded to the surface of the insulating substrate and then fully cured, it can be easily formed by a ^ 157 201146113 if. The grease film U' is not coated with the film of the above-mentioned resin film. For example, the photoresist material constituting the resin film u has the following materials. The necessary characteristics of the photoresist material are as follows: (1) The resistance of the liquid (electron bond core = liquid solution) of the wire thief L8 in the later-mentioned county (10) is high; (2) in the film removal step described later, for example ^The step of immersing the alkaline alkaline Xie (Lin (3 Gu Ji; (4) dry film night' although there will be a detailed description, but in the case of, for example, acidic pd from the ?1 catalyst system, all are acidic_value 1~2) Aqueous solution. (In the case of pH 8=d, the catalyst-providing catalyst is weakly considered to be m/曰, and it is acidic outside. It is known from the above that the electrolyte is attached to the electro-nuclear nucleus: It is necessary to withstand the pH value i~u, and it is more suitable to have a pH value of W2. Another ^ ^ can live, when the light-resistance county is immersed in the test towel, the 3 f photoresist is Wei. In addition, In fact, the immersion temperature is not 1 ^ 1 〇 minutes, the thickness of the photoresist film is 1~1 〇 post, but the cover f is removed to remove the step (4) although the lion liquid, Lai Wen will have The system is fine, for example, aqueous solution of Na0H or carbonic acid. The photo-resist film can be easily removed by pH 12 to 14. Na〇H = ^ degree is about 1~10%, and the treatment temperature is room temperature ~ thief, When handling, ^1〇不〇, generally by dipping or spraying However, it is not limited to this. It is also important to form a photoresist on the insulating material. Film formation is also important. H-holes, etc. are lacking in uniform film. In addition, although the manufacturing steps are simplified or ', = The film is dried, and the film is thinned in order to ensure easy handling characteristics. In addition, the film is dried by a laminator (reporter, vacuum) = σ, ,, and the color edge material. The temperature is room temperature ~16 (rc, pressure or time is followed by 惫, 158 201146113 If so, adhesion is required at the time of bonding. Therefore, the dry film-formed photoresist also has the function of preventing the adhesion of impurities. Generally, the carrier film and the cover film are formed by the user. However, it is not limited to this. It is of course the best to store at room temperature, but it must be able to be refrigerated or frozen. The composition of the dry film is not separated at these low temperatures, and the flexibility is not broken and the crack is formed. θ In addition, the resin film L8 has, for example, (8) at least one polymerizable unsaturated group in the molecule. At least one or more monomers of a carboxylic acid or an acid anhydride and (8) A polymer obtained by polymerizing at least one monomer of a monomer polymerization or a resin composition containing the polymer resin. σ The resin composition is mainly composed of the polymer resin as an essential component. Oligomers, monomers, fillers or other additives. The main resin should preferably have a branch. Regarding the molecular weight, the arithmetic mean molecular weight is preferably ~5_. When the amount of rape is too small, the bending property of the electroplating core is attached. The resistance (liquid resistance) of the liquid tends to decrease. In addition, the repellency of the sputum tends to deteriorate the dryness of the dry material: the chemical resistance of the Nandian money core and the suppression of the laser plus control It is also possible to introduce a cross-linking point. The composition of the polymer resin of the main resin of the d-transaction as described above can be as follows; (b) can be associated with the (diabetic ' θ 20 〇Τ ^ 2000-23 Π 90 士A, enoic acid, fumaric acid, cinnamic acid, crotonic acid, yuric acid, i.] lyric acid and half vinegar, propylene vinegar vinegar, etc., can be single 犹 κ,% hibiscus liver 'horse and beauty ,tit is non-acidic and has a polymerizable unsaturated in the molecule. Membrane brewing, methyl propyl hydrazine? In terms of, there are methyl methacrylate isopropyl isopropyl ester, n-butyl methacrylate, methyl 159 201146113 acrylic acid third butyl vinegar, methacrylic acid third butyl vinegar, methacrylic acid 2 _ vinegar, 2-hydroxypropyl methacrylate and the like. Further, there are esters of vinyl alcohol such as vinyl acetate, methyl methacrylate, and styrene derivatives which are polymerizable with styrene (tetra). Further, polymerization using a diacid or an acid anhydride having one of the above polymerizable unsaturated groups in the two sub-groups can also be known. Further, in a manner capable of three-dimensional crosslinking, a monomer having a = unsaturated group is selected from the monomers used for the polymer, and an epoxy group, a silk group, an amine group, a guanamine group, and an ethyl group 4 are selected. The reactive functional group is introduced into the molecular skeleton. The acid equivalent f of the slow-radical amount contained in the resin is preferably 100 to 2 Å, which is preferably _. The acid equivalent herein refers to the weight of the polymer having i groups therein. When the acid equivalent is too low, the compatibility with other components of the working solution or the resistance of the treatment liquid before plating may be lowered. In addition, when the acid equivalent is too = 'the stripping will reduce the _ direction. In addition, (8) monomer sister rate is 5~7〇. The monomer or the silk material may be any one which has resistance to an electrically difficult-to-attach chemical solution or can be easily removed with an alkali. In addition, in order to improve the adhesion of the dry film (DFR), the plasticity imparting material is provided. Further, in order to improve various resistances, it is possible to add an i-form and s, and it is a τ-based acrylic acid, an f-propyl acrylate, a methyl propylene, a methacrylic acid, or a methacrylic acid. , acrylic acid-hydrazine, methyl acrylate acid by ethyl acetonate, methyl acrylate acid 2 _ propyl esters and the like. Further esters of vinyl alcohol, methacrylonitrile, styrene or polymerizable poly-t can also be obtained. Furthermore, polyfunctional unsaturation can also be included. Things. The α may be any of the above monomers or the oligomer which reacts the monomer. The upper ruthenium η may also contain other photopolymerizable monomers. About mono α · , 6 — hexanol dimethacrylate , Bu 4 — cyclohexane diol dimethyl propylene 酉 酉 j j propylene glycol dimethyl propylene _, polyethylene glycol dimethyl acrylate vinegar , if propyl ester, glycerol 3-based acrylic acid 酞A-deuterated propylene ether trimethacrylate, 2,2-methylpropenyloxypentaethoxyphenyl, urethane-containing More $ 160 201146113. Correction, 'Village Zhuangshu's frequency of monomer reaction oligo hydroxide, filling t if there is no particular limitation, such as: dioxide dioxide eve, oxidation Ming, oxygen ϋ ϊ ϊ bow, clay, white clay, oxidation , sulfuric acid lock, acid soda, organic filler Rong% ice I mother, glass, acid acid unloading, gray stone, sulfuric acid lock, the size of the small material is ί. ° can make ~_(four)' so that it is broken when it is dispersed, and the coarse particles are cut, but it can also be used as a light-inhibiting resin (photopolymerization initiator), and polymerization to prevent cockroaches, pigments, and chromophores. A crosslinking agent such as a pigment), a thermal polymerization initiator, an epoxy abalone or a urethane formate. Mx d-based base material * In the printing process of the printing plate, laser processing is sometimes used, when using a stroboscopic laser excimer laser or a UV-YAG laser. The inherent wavelength, using a material with a high absorption rate for this wavelength can be 〇^(10)—The laser is suitable for fine processing, the laser wavelength is 355nm, 4 times higher harmonic 266nm, light The absorption rate of the material is expected to be above. The wavelength of the temple is increased by 'such as ® 36 (shown by Q' to remove part of the resin film L8 while removing the resin from the surface of the second insulating layer L1 in the blade removing to form on the second insulating layer L1. Circuit trench L4 (circuit trench forming step). The method of forming the circuit trench L4 is not particularly limited. Specifically, on the second insulating layer u on which the resin film L8 is formed, From the outer surface side of the resin coating film u, cutting processing such as laser processing or die cutting processing or press molding processing or machining is performed to form a circuit groove L4 having a desired shape and depth. For the fine electrical circuit L2 with precision, laser processing should be used. If laser processing is used, the laser depth can be changed to freely adjust the depth of cut. In addition, for press molding, for example, printing in nanometers should be used. The molding process using a fine resin used in the technical field. With this step, the shape, depth, position, and the like of the circuit trench L4 are defined. 161 201146113. The width of the circuit trench L4 formed by the circuit trench forming step , The electric circuit L2 ii can be easily formed. Further, the depth of the circuit trench L4 becomes the depth of the electrical circuit U formed by the local secret layer Li when the height difference of the second insulating layer Li is eliminated. L4 Lu Lai L4, the slave king condition 'make the circuit trench mi degrees in the range of the better with ~ 〇. 5 division. ♦ ♦ 拙 拙 L L L , , , , , The groove L4 and the dielectric catalyst coating step of the resin film L8). The inner surface of the gamma circuit trench using the grease film L8 and the entire surface of the unprocessed tree film L8 are covered with an electric etchant or its precursor L9. De-energizing: The drive L9 is used in the electric ore processing step to utilize the electric charge. The electroless ore film L10 may be formed on the portion of the plating film UG, and the mineral catalyst may be used as long as it is used in a conventional electroless ore catalyst. Correction can also listen to the precursors of Lai Wei, for example, after ί, the catalyst is generated. The specific precursor (Pd), platinum (pt), silver (Ag), etc. of the electric medium, or the method of making the metal = the electric money catalyst or its precursor L9 ί ^== For the treatment, please take a look at the method of treating the S moxibustion. Specifically, for example, the following method. The surface of the second insulating layer L1 which forms the circuit trench 1^ and the via 5 is then subjected to the sodium sulfate-sulfuric acid soft etching solution as needed. Then, the aqueous solution of sulfuric acid or hydrochloric acid having a pH of 1 to 2 is vaporized and then acid-washed. Then, the immersion liquid of the chloride ion absorbing layer L1 is treated in a prepreg which is immersed in the main component of the flute 1 or the like. Thereafter, it was immersed in an acidic plating '^' liquid containing an acid Pd-Sn gel or the like having a gas-catalytic gel and having a pH of 1 to 3 to agglomerate and adsorb Pd and Sn. Then, a redox reaction (SnCl2 + PdCl2-&gt; SnCl4 + Pd|) is generated between the adsorbed gasification sub-162 201146113 and the gasification handle. Thereby, the plating catalyst, that is, metal palladium, is precipitated. For the acidic electro-mineral catalyst colloidal solution, a conventional acidic Pd_Snb-gel/catalyst solution can be used, and a commercially available electron microscope long-order using an acidic electric solvent catalyst colloidal solution can also be used. For such procedures, for example, systemized vendors of Rohm and Haas Electronic Materials LLC. By the catalyst coating treatment, the plating catalyst or the pot liner L9 can be coated on the inner surface of the circuit trench L4, the inner wall surface of the pass L5, and the surface of the resin film L8. As shown in Fig. 36(E), the resin film L8 is swollen or dissolved with a predetermined liquid to remove it. By this rotation, the plating catalyst or its precursor L9 can be left on the inner surface of the processing-shaped groove L4, and will be removed. The method of removing the electric ore catalyst or the precursor L9 adhering to the surface of the resin coating film L8 in addition to the resin coating film L8 is not particularly limited. Specifically, for example, after the liquid (expansion) swells the resin L8, the second insulating layer film is peeled off by the coating film U; after the resin coating portion is partially dissolved by a predetermined solution (swelling liquid), 彳The second 纟L1 _L1 swells the tree S3 Ιί: As long as it is capable of making the resin coating U _ _ limit. Correction, the _ or turn, may be performed by immersing the second insulating layer U of the predetermined ί皮® in the swell. ^ ίίΐίΐ ‘It can also be peeled off gently when it is immersed in the ultrasonic wave to improve the removal of the other a ^. In the case of the description of the coffee U, the __ resin film L8 does not mean == sex = the film U swelled liquid (swelling liquid), as long as the solution is used to make the first, the color edge layer U and the The electro-mineral catalyst or its precursor L9 will only swell or dissolve the swellable resin coating U; otherwise, there is no special ship. Further, it is preferred to use a liquid which allows the swellable resin film u ^ to 163 201146113 to be easily peeled off. These swelling liquids can be selected according to the type of the swelling resin coating u or the J degree. Specifically, for example, when the swellable resin film L8 is composed of a thin elastomer, an acrylic elastomer, a poly-g-based elastomer, or the like, (8) has at least one dance-unsaturated group in the molecule. At least one or more monomers of the acid or the acid field, and (b) at least one or more kinds of the polymerizable resin which can be polymerized with the (8) monomer, or a polymer resin obtained by the polymerization, or a composition containing the polymer Containing the rebel base of the C-line pure fat, it is advisable to make an aqueous test solution such as a solution of aquarium hydroxide. &quot;10/. Left and right

^卜,當在觸媒彼覆步驟中使用以上述酸性條件進行處理的電 鑛程,時,祕_脂_ U㈣在酸性條件下輕,度在60% J t it條件下膨潤度在鄕以上的例如:二生體、稱 酉夂糸彈性體以及聚酯㈣性體等的彈性體、將⑻在分竹 1個聚合性不飽和基峨酸或_:的至少丨種以 體、^, when using the electro-mineral treatment under the acidic conditions mentioned above in the catalyst-independent step, the secret___(4) is light under acidic conditions, and the degree of swelling is above 60% under the condition of 60% J t it For example, an elastomer such as a dioxane, a ruthenium elastomer, or a polyester (tetra) physin, or (8) at least one of a polymerizable unsaturated decanoic acid or _:

少1種以上的單體聚合所得_聚合J ΐΐ 樹脂組成物、含有絲的丙烯酸系樹脂所 樹脂覆??,利用ΡΗ值12〜14的驗性水溶液, 離。=a τΐϋΐ氮氧化納水溶液等,便可輕易獅潤、剝 f另外,為了k南剝雜,亦可在浸潰時用超音 亦可因應需要輕輕用力將其剝除。 I、、射另外 覆膜膨潤的方法,例如:將膨潤性樹脂 方法。=u浸潰於膨潤液中經過既定時間的 外,僅嫌性’最好是在浸潰時用超音波照射。另 卜抽未剝離時,亦可根據需要輕_力將其剝除。 的‘戶Ί示的’對殘留著電_媒或其前驅物L9 的内面貫施無電解電鍍處理,形成盎電解電纪膜 電驟)。_該步驟’在電路細的= 鑛觸分披覆有電 在彼覆有電鐘觸媒或其_L;的部;出電: 164 201146113 L10(電鍍層)的方法等。 鋁(Α^等用於 1 無,電,金屬,例如:銅(Cu)、鎳⑽、攀)、 的選i、。另外巾成分的電鍍由於導電性優異,是較佳 異,是較佳的選; Nl時,耐錄或與焊料的密合性優 無電解電鑛膜L10的膜厚並盔特別眼令 «λ ,, 〜1〇邮,更宜為左^、期限疋。具體而言,例如,〇·ι 盆前轉’在第二錄層u表面殘留有紐觸媒或 L9的部分上析出無電解電錢膜UG。如是,便可 的部分正確地形成無電解電麵L1G。另一方面, 2 成電氣電路L2的部分析出無電解電舰L10。 L2 Α 的__軸複數條線寬狹小的細微電氣電路 二1ΪΪ隣接電魏路U之間殘留多餘的電鍍膜。因此,能 夠防止短路或遷移等問題的發生。 b 如圖37(B)所示的,在第二絶緣層u上,利用雷射加工 H式形成從電路溝槽L4的底面到第—電氣電路口的表面 ϋ。此時,在通孔^底部露出之第一電氣電路L7的表面上殘 留著膠渣L11。 仏叫工夕戈 频二對通孔L5的内面實施去膠潰處理,如圖37(C)所示的將 二二/_ 11除去。該去膠渣處理並無特別限定,可採用習知的去膠 /一处^。具體而言,例如,浸潰過錳酸溶液的處理。 夕 、藉由該去膠渣處理,使通孔L5的内面的樹脂變粗糖,並使該 3孔L5 _面的表面_度變大,_電路溝槽L4的内面被= 電解電麵L1G覆蓋,故電路難μ _面不會_去膠逢處王里 液而變粗糙。因此,電路溝槽L4的内面的表面粗糙度比通孔L5 的内面的表面粗糙度更小。 '在去膠渣處理之後,如圖37(D)所示的,對電路溝槽L4的内 面以及通孔L5的内面實施無電解電鍍處理。此時,存在於電路溝 的内面的無電解電鍍膜L10以及在通孔L5底部露出之第 %氣電路L7發揮作為電鍍核的作用,電鍍層在電路溝槽乙4的内 165 201146113 側以及通孔L5的内側成長。料 二電氣電路L2,同時在柳電路溝槽L4的内側形成第 第-電氣電路L7導通^的使第,氣電路L2與 L7施加__邊實二;另夕’主亦可-邊對第-電氣電路 部露出之第-電氣電處理。此時’電鍵層從在通孔L5底 Μ内部叹電補t L4 充通孔 此’利用增層法,即使基板L1。。藉 移等問題發生^=2電=。下’亦可形成能夠防止短路或遷 〔弟一製造方法〕〃 接著,如圖38⑼所示的,對U。 L5。此時,在通孔L5綱出之J =的通孔 著夥渣Lll。 電乳電路L7的表面上殘留The polymerization of the monomer-polymerized J ΐΐ resin composition and the silk-containing acrylic resin obtained by polymerization of one or more kinds of monomers is carried out by using an aqueous solution having a enthalpy value of 12 to 14. =a τ ΐϋΐ ΐϋΐ 氧化 氧化 纳 , , ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ ΐϋΐ I. A method of injecting another film, for example, a method of swelling a resin. =u is immersed in the swelling solution for a predetermined period of time, and only the suspicion is preferably irradiated with ultrasonic waves during the impregnation. When the other is not peeled off, it can be peeled off as needed. The "household display" is subjected to electroless plating treatment on the inner surface of the residual electric medium or its precursor L9 to form an electrolysis circuit. _ This step 'in the circuit fine = mine touch is covered with electricity in the part covered with electric clock catalyst or its _L; power out: 164 201146113 L10 (plating layer) method. Aluminum (Α^, etc. for 1 no, electricity, metal, such as: copper (Cu), nickel (10), climbing), select i,. In addition, the electroplating of the towel component is excellent in conductivity, and is preferable, and is preferable. When N1 is used, the adhesion to the recording or the solder is excellent, and the film thickness of the electroless ore film L10 is excellent and the helmet is particularly eye-shaped. ,, ~ 1 〇 post, more suitable for the left ^, the term 疋. Specifically, for example, the 〇·ι basin is turned forward. The electroless money film UG is deposited on the portion of the second recording layer u where the catalyst or L9 remains. If so, the portion that can be formed correctly forms the electroless surface L1G. On the other hand, the portion of the 20-inch electric circuit L2 analyzes the electroless ship L10. L2 Α __ axis complex line width narrow small electrical circuit 2 1 ΪΪ adjacent to the electric Wei Road U residual excess plating film. Therefore, it is possible to prevent problems such as short circuit or migration. b As shown in Fig. 37(B), on the second insulating layer u, a surface ϋ from the bottom surface of the circuit trench L4 to the first electrical circuit port is formed by laser processing. At this time, the glue L11 remains on the surface of the first electric circuit L7 exposed at the bottom of the through hole. The inner surface of the through hole L5 is subjected to degumming treatment, and the second/n-11 is removed as shown in Fig. 37(C). The desmear treatment is not particularly limited, and a conventional degumming/one place can be employed. Specifically, for example, a treatment of impregnating a permanganic acid solution. Further, by the desmear treatment, the resin on the inner surface of the through hole L5 is made into a coarse sugar, and the surface _ degree of the three-hole L5 _ surface is increased, and the inner surface of the _ circuit groove L4 is covered by the electrolytic electric surface L1G. Therefore, the circuit is difficult to be _ _ face will not _ go to the rubber in the Wang Li liquid and become rough. Therefore, the surface roughness of the inner surface of the circuit trench L4 is smaller than the surface roughness of the inner surface of the via hole L5. 'After the desmear treatment, as shown in Fig. 37(D), the inner surface of the circuit trench L4 and the inner surface of the via hole L5 are subjected to an electroless plating treatment. At this time, the electroless plated film L10 existing on the inner surface of the circuit trench and the first gas circuit L7 exposed at the bottom of the through hole L5 function as a plating core, and the plating layer is on the side of the circuit trench B 146 201146113 and The inside of the hole L5 grows. The second electric circuit L2 is formed on the inner side of the Liu circuit trench L4, and the first electric circuit L7 is turned on, and the gas circuit L2 and L7 are applied to the second side; the other side can also be the same as the side. - The first-electrical treatment of the exposed electrical circuit. At this time, the 'key layer sings from the bottom of the through hole L5 to the bottom of the through hole L L4 to fill the hole. This is by the build-up method, even the substrate L1. . Borrowing and other issues occur ^=2 electricity =. The lower layer can also be formed to prevent short-circuiting or migration. Next, as shown in Fig. 38 (9), the pair U. L5. At this time, the through hole of J = which is outlined in the through hole L5 is slag Lll. Residual on the surface of the electric milk circuit L7

除去ϊΐ、杳1 fi 3ΪΪ斤示的,對通孔L5的内面實施去膠清處理以 除去该膠渣L11。藉由該去膠渣處理 =^处主M 糙,該通孔L5的内面的表面粗 1 造度變大。、的树脂變粗 去膠產處理後,如圖38(D)所示的,斜,s:2i τ J解電鍍處理。此時,在通孔L5底部露出=氣^^ 揮作為紐核的作用,層在通孔L5的内側成 =的另外,亦可—邊對第-“路二 刀口罨壓一邊貫細電解電鑛處理。此日车 出之筮Τ7 λλΓ 此寺電鍍層從在通孔L5底部露 i __始堆積,該電鑛層填充通孔U内· 166 201146113 接著,如圖38(E)所示的’在第二絶緣層L1的表面上形 覆膜L8(覆膜形成步驟)。 接著,如圖39(A)所示的,除去部分樹脂覆膜L8,同時在該除 去°卩刀上更從第一絶緣層L1的表面將樹脂除去,以在第二纟色緣声 L1上形成電路溝槽L4(電路溝槽形成步驟)。如是由於在對通孔 内部實施去膠渣處理之後形成電路溝槽L4,故電路溝梓 的表面粗糙度比通孔L5 __表_糙度更 L4的一部分與該通孔L5重疊,通孔u的上部與電路溝槽l ^ 一體。 人 當如是形·路溝槽L4 _ ’設定加卫躲,使魏路溝槽w 的内面的表面⑽造度Ra在較佳的0.01〜〇 5哗的範圍内。 接著,如圖39(B)所示❾’在電路溝槽L4以及樹脂 外表面上披覆電鍍觸媒或其前驅物L9(觸媒披覆步驟)。' 、,著,如圖39(C)所示的’用既定液體膨潤或溶解樹脂 8 以將ϋ:(細除去步驟)^»藉由該步驟,便盆 :物,在雷射加工所形成之電路溝槽L4 =外的樹脂覆膜L8的表面上所_的電賴媒或其前驅物將= 的雷iLH39(D)i斤示的,對殘留著電鑛觸媒或其前驅物L9 ΓΛ ^ Λ的内面^_解電錢處理,使電鑛層在電=籌枰 L4的内側成長,並形成第二電氣電路[2。 4电塔糾 藉此’在電路清槽L4内設置第-歯盔赍攸τ 二導通該第二電氣電路口與第 所不的電路基板L10。 从衣作出如圖35 〔第三製造方法〕 基板說明該電路 詳細說明。 ^弟方法共通的事項省略對其 首先與第一製造方法相同,如罔 L6上設置第—電氣電路P,更設在第—絶緣層 167 201146113 在,第二絶緣層L1上,如目4〇(B)所示的,不設置樹脂覆膜 L8,而是從第二絶緣層L1的表面將樹脂除去,以在第二絶緣層 上升電路溝槽L4(電路溝槽形成步驟)。 當如是碱電麟槽L4時,設定加工餅,使該電路溝槽U 的内面,表面《造度在較佳的α〇1〜〇5μιη的範圍内。 一接著,如圖4〇(C)所示的,在包含電路溝槽L4的内面在内的第 二t彼覆電鍍觸媒或其前驅物L9(觸媒披覆步 4媒披覆處理,便可在電路義L4 _面以及未經 =9射加讀第二絶緣層L1的整個表面上披覆賴觸媒或其前驅 το =著’如^⑽⑼所*的’對包含披覆著電鑛觸媒或其前驅物 9=電路溝槽L4 _面在内的第二絶緣層u的外表面實施益電 =J處理,形成無電解電鍍膜L1〇(電錢處理步驟)。利用電 工箸Ϊΐπΐ圖41(Α)所示的,在第二絶緣層L1上,利用雷射加 的ίί ί 路溝槽^的底面到達第—魏電路L7的表面 上殘留著膠渣L11 0 龄:=⑻所f的,對通孔L5的_實施去縣處理以 袓^二s除去。措由该去膠渣處理,通孔L5的内面的樹脂變 内L5的内面的表面粗链度變大,由於電路溝槽L4的 無電解電鍍膜L1G覆蓋,故電路溝槽L4_面不會因為^ 變粗糙。因此,電路溝槽u的内面的表面粗糖度比 逋孔L5的内面的表面粗糙度更小。 為膠渣處理之後,如圖41(〇所示的,對第二絶緣層L1的外 無轉€减理。鱗,無魏驗獻㈣及在通孔 第一電氣電路L7發揮作為電鑛核的作用,電鏟層在 |路巧L4 _側、通孔L5的内側以及第二絶緣層u 長。猎此,在電路溝槽L4的内側形成第二電氣電路u,= 168 201146113 孔L5的内側形成使第二電氣電路L2與第一電氣電路L7導通的介 層L3,電鍍層更在第二絶緣層L1的表面成長。另外,亦可一邊對 第一電氣電路L7以及無電解電鍍膜L10施加電壓一邊實施電解電 鑛處理使電鑛層成長。 接著,如圖 41 (D)所示的,利用 CMP(Chemieal Meehanid Polish;) 法將第一絶緣層L1的表面側的電鑛層研磨除去。藉此使第二絶緣 層L1的表面以及第一電氣電路L2的表面露出於外部。經過該等 步驟’製作出如圖35所示的電路基板L10。 ' 〔第7實施態樣〕 本發明更關於一種可用於各種電子、電氣裝置的電路基板。 為了實現電子、電氣裝置的高性能化,吾人期望能夠得到一種 =以細微且高密度的方式配線的電路基板。為了像這樣以細微且 尚雄度的方式形成電路’習知文獻揭示在絶緣基材的表面上將溝槽 形成圖案雜,並在該溝槽崎充金屬導體卿成電路的技術内容 (參照例如日本特開2009 —81211號公報等)。 像這樣,藉由在絶緣基材的溝槽内填充金屬導體以形成電路, 微且南密度’也能夠防止電路斷線,啊確保娜電路間的 絶緣性,形成可靠度較高的電路。 番J Γ係表示對絶緣基材M1的溝槽M2填充金屬導體M3以認 $電=4所形成之電路基板的—個實施例。亦即,首先如圖 ^ Iff亥絶緣基材M1的整個表面上,亦包含溝槽M2的内^案 二電 塗:ΐίϊ電鑛用的電鑛觸媒Μ5。接著,浸潰 而、ΐΪΪΐ 了無電解魏,藉此在電鑛觸媒Μ5所附著的表 電解電鑛膜施。無電解電鑛膜Μ6⑹圖48(c)所示二 部在内的絶緣基材M1的整個表面上。益電解 後,厚’像這樣在形成無電解魏膜^ ΐ 邊1,、電解電鍵膜通直流電流,一邊浸潰電解带雜y 电解電鑛層M7。猎由像這溝槽搬内在無電解電鑛膜 169 201146113 =6的表面上析出電解電鍍層M7,便可在溝槽⑽喊充由無電解 電鐘膜M6與電解電鑛層M7所構成的金屬導體M3。此時,由於 基材Ml的溝槽M2以外的表面上也形成無電解電鑛膜M6 或電解電鍍層M7,如上所述的在形成電㈣鍍層M7之後,研磨 絶緣基材Ml的表面’如圖48(E)所示的,將絶緣基材腿的表面 所露出之無電解電鍍膜M6或電解電鑛層Μ?除去,藉此便可使各 溝槽M2内所填充之金屬_ M3彼此獨立,並以溝槽M2内的金 屬導體M3形成電路M4。 如上所述的,實施無電解電鍍以及電解電鍍,便可在溝槽M2 内填充金屬導體M3以形成電路M4。然而,在圖48的習知實施例 中’溝槽M2 _填充之金屬導體⑽大部分是由電氣電鑛所形成 的,像這樣由電解電鍍所形成之金屬導體M3,其結晶粒塊大小合 不平均(參照後述的圖47)。然後當該等結晶粒塊大小不平均時,^ 屬導體M3的力學特性、熱特性、電氣特性會降低,電路M4 靠度會產生問題。 有鑑於上述問題點,本發明之目的在於提供一種電路基板,其 能夠以粒塊平均且細微化之結晶形成電路形成用溝槽内的金屬 體,電路的可靠度較高。 本發明之電路基板,在絶緣基材Ml的表面上形成電路形成用 溝槽M2,同時在電路形成用溝槽河2内填充利用電鍍所形成的金 屬導體M3,該金屬導體M3的結晶粒塊的平均直徑長度在1〇 以下。 μ 如是’由於在電路形成用溝槽M2内所填充之金屬導體Μ3, 其結晶粒塊的平均直徑長度在1〇μηι以下,是由平均且細微化的結 晶粒塊所形成的,故可提高金屬導體M3的力學特性、熱特性、g 氣特性。 另外’在本發明中,電路形成用溝槽M2内的金屬導體M3是 由無電解電鍍所形成的。 藉由像這樣以無電解電鍍形成金屬導體M3 ’便可如上所述的 以粒塊平均且細微化的結晶形成金屬導體。 170 201146113 亦即,本發明的第7實施態樣包含以下技術内容。 請求項7—1. —種電路基板,其特徵為··在絶緣基材的表面上 形成電路形成用溝槽,同時在電路形成用溝槽内填充由電鍍所形成 的金f導體,該金屬導體的結晶粒塊的平均直徑長度在1〇μιη以下。 ,、請求項7—2.如請求項7一丨所記載的電路基板,其中,電路 形成用溝槽内的金屬導體是由無電解電鍍所形成的。 若利用本發明,由於電路形成用溝槽Μ2内利用電鍍所填充之 金屬« M3 ’其、结晶粒塊的平均直徑長度在1〇μιη u下且係由 平均且細微化的結晶粒塊所形成,故金屬導體河3的力學特性、熱 特性、電氣特性能夠提高,並形成可靠度的較高的電路Μ4。 以下 ό兑明本發明的實施態樣。 ^於本發明之絶緣基材M1,只要是可麟電路基板的製造過 i他並無特別限定’具體而言,可舉例如含有樹脂的 脂匕’只要是構成可用於電路基板的製造過程 1 ·、,有機基板的树脂即可,其他並無特別限定,具體而言,例 炉醚嫌脂、跋義概、雜亞職脂聚苯 ii樹if 氯酸醋樹脂、苯並喔嘻樹脂、雙馬來麵 環_魏細旨、絲苯騎_ 獅旨、倍軸二稀型環 中的5難’只妓構射電職板之製造過程 令的if 基板魏樹齡可,其他絲特舰定。具體而 。此」.又f A型環氧樹脂、雙齡F型環氧樹脂、雙紛S型環 ΐ阻為了賦 |以:侧樹脂等。可單獨使用上述各環氧:== 171 201146113 苯酚系硬化劑、酸酐系硬化劑、氨基三嗪酚醛系硬化劑、I酸酷樹 脂等。關於該苯酚系硬化劑,例如:酚醛型、芳烧型、萜烯型等硬 化劑。為了更進一步賦予阻燃性’可使用經過磷變性的苯酚樹脂或 是經過磷變性的氰酸酯樹脂等。可單獨使用該等硬化劑,亦可組合 使用2種以上。 另外雖然並無特別限定,惟由於係利用雷射加工形成電路圖 案,故宜使用對100〜400nrn波長範圍的雷射光的吸收率良好的樹 月旨。具體而言,例如聚酿亞胺樹脂等。 絶緣基材Ml亦可含有填料。該填料可為無機微粒子,亦可為 ^機微粒子,並無特別限定。由於含有填料,在雷射加工部填料會 露出,填料的凹凸可提高電鍍與樹脂之間的密合。 ㈢ 構成該無機微粒子的材料,具體而言,例如:氧化鋁(a12〇3)、 氧化鎂(MgO)、氮化硼(BN)、氮化鋁(A1N)、二氧化矽(Si〇2)、鈦酸 =(BaTi〇3) '氧化鈦(Ti〇2)等的高介電常數填充材料;硬鐵氧磁體 f的磁性填充材料;氫氧化鎂⑽(〇h)2)、氫氧化紹(A1 (〇h)2)、三 _化錄(Sb&gt;2〇3)、五氧化録(%2〇5)、胍鹽、侧酸鋅、紹化合物、 (CaC〇3)、雲母等。可單獨使用上述無機微粒子, 雷Ίί S彳用2種以上。該等無機微粒子’由於熱傳導性、相對介 1、雜性、她分布、色綱自由度等很高,故在使所期望 發揮的情況下’進行適當摻合以及粒徑設計,便可ΐ 、十、极Ν又填充化之目的。另外雖然並無特別限定,在表面上形成 緣作出絶緣基材M1時,宜使用平均粒徑在絶 if 的填料,尤其宜制平均粒徑在疆〜1_之範 另外吏用平均粒徑在〇.〇5μιη〜5μηι之範圍内的填料。 用』處;;在^ 無機微粒子在絶緣細:在絶緣基材M1中,為了提高 於該矽烷偶合劑,;u石=性’亦可含有矽烷偶合劑。關 乙烯基魏系、笨乙贼=魏糸、疏基魏系、胺基魏系、 、 烯土夕烷糸'甲基丙烯醯氧基矽烷系、丙烯醛 172 201146113 偶合_。可單獨制上述魏偶 t μι 分散劑’亦可組合使用2種以上。 ^ 在i路:有機微粒子,具體而言,例如:橡職粒子等。 开πίί ΐt絶緣ί#Μ1的態樣並無特別限定,具體而言,可 ινίι的;® 預讀以及二維職的成形體等。糾絶緣基材 限定,,例如,在片材、薄膜、預浸材的情況下, 且為10〜200μηι,更宜為2〇〜100μηι左右。 在雜緣基材M1的表面上將電路形成用的溝槽 圖44(A)所示的樣子。該溝槽⑽形成與設置在絶緣基材 Ml的表面上的電路圖案相同的圖案形狀。 ϊΐΐί電路形顧溝槽M2的方法並無特聰定,例如, ϋίίί L實施雷射加卫、模切加卫料娜加工或壓型加工 以形成具備所期望之圖案形狀、寬度以及深度的 /曰“:工方法等。當欲以而精度形成細微電路時,宜使用雷射加 ^。若採用雷射加王,便可藉由改變雷射輸出等方式,自由調整切 削深度等參數。另外,關於壓型加工,宜使關如在奈米印刷的技 術領域中所使用的利用細微樹脂的壓型加工。 成介?孔等部位的貫通孔作為電路形成用溝槽奶力一部l用來 藉由在絶緣基材Ml上形成溝槽M2的這個步驟,限定出在絶 緣基材M1上所形成之電路綱的圖案形狀、寬^厚】 成之溝槽M2的寬度並無特別限定,當使用雷射加工時,便較易以 線寬在20μιη以下的細微寬度形成溝槽μ]。另外溝槽M2的深度 會成為電路M4的厚度。 如上所述的在絶緣基材Ml的表面上形成電路形成用的溝槽 M2之後’使電鍍觸媒M5附著於該溝槽m2形成侧的絶緣基材Ml 的表面上。電鑛觸媒M5如圖44(B)所示的附著於包含溝槽m2的 173 201146113 内周圍面在内的絶緣基材Ml的整個表面上。 ”媒M5在進行無電解時會成為使電鍍金屬析出的 核。關於電綱媒M5 ’使用習知的無電解電錢用的觸媒即可,盆 他並無制限定’另外亦可披㈣鍍觸的前驅物,使電_媒^ 成。關於電鐘觸媒M5的具體例,例如:金屬鈀㈣、白金、 (Ag)等,或是,使該等金屬生成的前驅物。 ’ 關於披覆電鍍_奶(包含其前驅物)的方法,例如 PH值丨〜3 _嫌條件下進行處_酸性pd—% 容液進行處 理之後’再雜溶液進行處理的方法。具體而言,例如以下的方法。 首先,將形成電路形顧雜M2的絶緣基材M1的表面上 ,油分等在界面活性劑的溶液(清潔劑、調和劑)中進行既定的時間 烫,。接著,因應需要,用過硫酸鈉—硫_的軟侧劑進行 刻處理。然後,在pH值1〜2的硫酸水溶液或鹽酸水溶液等的酸 進行酸洗。接著,浸潰於濃度G.1%左右的以氯化亞錫 材m之表面上的職處理。之後,再浸潰於含,氣化 f f1值1〜3的酸性Pd~~Sn膠狀物等的酸性電鍍觸媒膠狀溶液 以減集並吸附Pd以及Sn H在所吸附的肢(亞錫與氯化把之 間產生氧化還原反應(¾¾+pdcl2—SnCU + 、析 鐘觸媒亦即金屬纪β )稽t析出電 f外’關於酸性電鍍觸媒膠狀溶液,可使用習知的酸性pd— =膠。狀_溶液等’亦可顧制雜電綱郷狀溶液的市售 ”鍍私序。關於該等程序,例如:Roj^^dHaas電子材料股份右 限公司所系統化販售者。 如上所述的在使電鍍觸媒M5附著於包含電路形成用溝槽Μ〕 的内周圍面在内的絶緣基材Ml的表面上之後,進行無電解電鑛處 f。關於無電解電鍍處理的方法,可採用將電鑛觸媒M5所披覆之 f緣基材M1浸潰於無電解電鍍液中,以在彼覆有電鍍觸媒M5的 4位上析出無電解電鍍金屬的方法等。 可用於無電解電鍍的金屬’例如:銅(〇1)、鎳(Ni)、鈷(c〇)、 174 201146113 另成分織_電性優異’是較佳 異,是較ί的^ 時,耐紐或與焊料的密合性優 益電ίΐϊίϊ電1 電錢’便可如圖44(c)所示的,形成很薄的 絶緣基材M1的整個表面上。另外2 •,# ^^^解紐之基咖厚度的薄膜, 例如成ΐ無電解電鍍膜M6的該絶緣基材mi,浸潰於 雷^ 使紐速度提高的無電解電鑛液中,繼續無電解 猎由像14樣繼續進行無電解電鍍,如5144⑼所補,在益 =8解之上析出無電解紐金屬並堆疊無電解電鑛廣、 M?允二…*电軋電鑛層Μ8將溝槽Μ2内部填埋起來,進而在溝样 屬導體tS充由無電解電鑛膜Μ6與無電解電鍍層Μ8所構成的^ 如疋進行無電解電鑛的處理直到用無電解電鍍層應填埋溝槽 =、内部。此時,無電解電鑛膜Μ6也會形成在溝槽Μ2的』 田=的絶緣基材M1的表面上,在絶緣基材M1的表面上也會堆 豐無電解電鑛層通。然後,藉由對絶緣基材Ml的表面進行研磨 ,工,將絶緣基材M1的表面所露出之無電解電鍍膜以及無 解電鍍層M8除去。該研磨並無特別限定,可實施例如 CMP(〇iemicalMechanicalP〇lishing :化學機械研磨)法。CMp 法係 「邊使化學研磨液流過一邊用研磨墊研磨絶緣基材M1之表面的方 法。亦可在實施該等CMP法之前,用蝕刻液大略地將突出於絶緣 基材Ml之表面的無電解電鍍膜河6以及無電解電鍍層M8溶解除 去。 如上所述,將絶緣基材Ml表面的無電解電鍍膜M6以及無電 解電鍍層M8除去,藉此’便可如圖44(E)所示的,使在各溝槽M2 内所填充之由無電解電鑛膜M6與無電解電鍵層M8所構成的金屬 導體M3於各溝槽M2各自獨立,並以該各溝槽M2所填充之金屬 175 201146113 形成電路M4。形成電路M4的該金屬導體M3,藉由研磨, ”表面與絶緣基材Ml的表面形成單—表面。然後,由於 = 體M3,如上所述的係以無電解電鍍的方“ = 導體M3會由粒塊平均且細微化之結晶所形成(參,昭後 恤、娜、電氣特性, 在此,金屬導體M3的結晶粒塊的大小,平均直徑長度設定在 平宜在5μιη以下,最好是在3μιη以下。結晶粒塊的 瓜長度越小越好,絲設定下限。使結晶織的平均直徑長 ίί触小’便可使金屬導體Μ3的結晶粒塊平均且細微化,並使金 ,導體M3的力學特性、熱特性、電氣特性提高。該平均直徑長度: 5在如後述_ 46或圖47所得到之SIM影像巾的任意位置上, 2 的直線’對配置在該1〇〇师的直線之上的各結晶 ί ίΓ Ϊ其沿者li%m之直線上的長度,算出該各結晶粒塊的 長度的測讀的平均値。亦即,求出配置在励哗之直線上的妹 f塊的數量’將励叫除以該結晶粒塊數量,便可求出 塊的平均直徑長度。 龄H表*本發明的另一實施態樣。上述圖44的實施態樣,係 電,,媒M5形成如圖44⑼所*之態樣,之後如圖44(c)所示的 ^成很薄的無電解電鑛膜M6,並在該無電解電鐘膜M6之上形成 ‘、,、電解電錢層]VT8 ’在圖45的實施態樣中,如圖45(A)所示的,在 使電鍍觸媒M5附著於包含溝槽⑽㈣在内的絶緣基材m的表 面上之後,將絶緣基材M1繼續浸潰在無電解電鍍液中,藉此,如 圖45(B)所不的,不形成很薄的無電解電鍍膜M6,而是只用無電 解電鑛層M8:t真埋溝槽M2_,亦即只用無電解電鍵層通^溝 槽M2内部填充金屬導體M3。此時無電解電鍍層M8除了形成於 溝槽M2 _之外,也形成在絶緣紐的表面上,將絶緣基材 Ml的表面上所路出之無電解電鑛層⑽研磨除去,藉此,便可如 圖45(C)所示的’在各溝槽M2内填充金屬導體奶以形成電路M4。 [實施例] 176 201146113 以下,根據實施例更具體説明本實施態樣的製造方法。另 本發^的細在轉上並不目為以τ的實施例喊到任何。 (實施例1) 沾志度1〇〇陣的環氧樹月旨基材[松τ電工(股)公司製的R1?66] =表^上域厚度2μπι的苯乙稀—丁二烯共聚物(SBR)的覆膜。另 —’覆膜_成,係在棘氧樹絲材的主録面上,塗佈苯乙稀 於聚fiSBR)的丁酮_κ)懸浮液[日本(股)公司製, 里600,粒子徑2〇〇nm,固體形態成分15%],並在8〇它 過30分鐘的乾燥所製得者。 、 然後,對已形成覆膜的環氧樹脂基材,利用雷射加 、深度2一的具備如圖i⑼所示之形狀的溝槽。另外,雷 口工,用具備UV-YAG雷射的ESI公司製的MODEL5330。 、、壬Μ^ΐ、’將已域溝槽的環氧樹脂基材浸潰於清潔調和劑[界面 中,抓t液’PH&lt;1、:RGhmandHaas電子材料(股)公司製C/N3320] 編^後,用水清洗。然後,用過硫酸鈉-硫酸系的PH&lt;1的軟 ,^進行軟磁慎理。然後,用PD侧陣pley Fareast(股)公司 Ξοίΐ 彳f气驟、。然後’浸潰於包含氯化亞錫與氯化1巴 , 、夂—Sn 膠狀溶液[CAT44,Shipley-Fareast(股)公司製] 樹脂^^1無電觸電難馳在錫—娜狀的狀態T吸附於環氧 八q H浸潰於ρΗ&lt; 1的催化劑藥液[ACC19E,ShiPley_Fa_(股) 中’以產生纪核。然後,將環氧樹脂基材錄pHi4的5% 液+進行超音波處理並浸潰1G分鐘。藉此,表面的 綠® 被^潤’而徹底被剝離。此時,在環氧樹脂基材表面上未 膜的碎片等。紐,將環氧樹脂基材浸潰於無電解電 A、CM328L、CM328C、Shipley-Fareast(股)公司製]中 進行無電解銅電鍍處理。 ㈣Hii解料鍍處理’析4厚度電觸電鑛膜。 (掃A型顯微鏡)觀察經過無電解銅電鍍處理的環氧基材 ’發縣經過切削加工的部分上,正確地形成無電解電鑛膜。 177 201146113 另外1膨潤性樹脂覆膜的膨潤度根據以下方式求出。 。在脫模紙上塗佈用來形成膨潤性樹脂覆膜的SBR懸浮液,在 80 C下經過30分鐘的乾燥。藉此形成厚度2μηι的樹脂覆膜。然後, 強制剝離所形成之覆膜,製得試料。 然後,將所製得之試料秤取〇 〇2g左右。將此時的試料重量當 作膨潤前重量m(b)。然後,將聰取之試料浸潰於2㈣。c的氮氧 化鈉5〇/:水溶液l〇ml中經過ls分鐘。另外,其他試料也同樣浸潰 於20±2 C的鹽酸5%水溶液(pH1)1〇ml中經過15分鐘。 然後,用離心分離器以1〇〇〇G進行約1〇分鐘的離心分離處 =^去試料所附著之水分等。織,測量㈣分離後的膨潤試料 的重罝,當作膨潤後重量m(a)。從所得到的膨潤前重量m(b)以及 Ϊ,重;m⑻,根據「膨潤度SW,⑻-(%)」 的异式’算出膨潤度。另外,其他條件準用Π8ί1〇ΐ5 8驗性膨 潤度的測量方法)進行。 此時,對ρΗ14的氫氧化鈉5%水溶液的膨潤度為75〇%。另一 方面,對PH1的鹽酸5¾水溶液的膨潤度為3%。 (實施例2) θ除了用含有敌基的聚合物[曰本zeon(股)公司製,酸當量5〇〇, 重里平均分子量25_ ’固體形態成分2()%体代苯乙烯—丁二稀丘 1 物(舰)的丁酮_K)懸浮液[曰本z⑽(股)公司製,酸當量 600 ’粒子徑2〇〇nm,固體形態成分啊以外,其他與實施例i相 同0 此時,對PH14的氫氧化納5%水溶液的膨潤度為画%。另 一方面,對PH1的鹽酸5。/。水溶液的膨潤度為3〇%。 w·糾如以上所述的’刹用本實絲樣之製造方法,齡剝離膨潤 部分上披覆電賴 ^。因此’便可在彼财紐觸的部分上正確蘭成無電解電鍍 ^另外,由於賴性樹脂覆朗鱗潤侧而較易被獅,故覆 膜除去步驟也較易正確地進行。 然後,用SEM (掃描型_鏡)觀知上敍式製得之電絲 178 201146113 相對於卿该之電路溝槽的長邊方向的垂直剖面。所形成之無 1解巧膜的厚度T約為5μιη,電路溝槽的深度D約為2〇 ^ 時,T/D約為〇.25。 (第2實施例) 以下,根據實施例更具體説明本實施態樣的製造方法。另外, 本毛明的範15在解釋上並不因為以下的實施例而受到任 (實施例2—1) 先,顿砰均粒子徑α5μηΐ的二氧切奸(Admatechs j有限公的SO-C2)、雙酶A魏氧樹脂卿股份有限公 司製的850S)以及作為硬化劑的二氰二胺(日本⑶趾工業股份有 ϋ司製? DICY)賴摘紐,作為崎騎。糾,該絶緣基 材係该一氧切粒子的含有量姆於該絶縣材為%冑量%且厚 度為ΙΟΟμηι的基材。 接著,在該絶緣基材的表面上,形成厚度2μιη的苯乙稀—丁 二烯共》(SBR)的覆膜(樹脂覆臈)。另外,覆膜的形成,係在該 J緣基材,主要表面上,塗佈苯乙烯—丁二烯共聚物(·)的丁酮 K)懸浮液[日本Zeon (股)公司製,酸當量_,粒子徑·nm ’ 固體形態成分15%] ’並在80。(3下經過30分鐘的乾燥所得者。 然後,對已形成樹脂覆膜的絶緣基材,利用雷射加工形成寬度 2〇μηι、深度20μηι、長度30mm的約略長方形剖面的電路溝槽。另 =’雷射加卫使用具備UV—YAG雷射的雷射光照射裝置(ESI公司 製的 MODEL5330) 〇 、接著,將已形成電路溝槽的絕緣基材浸潰於清潔調和劑(界面 活性劑溶液,PH&lt;1 : Rohm and Haas電子材料股份有限公司製c /N3320)中,之後,用水清洗。然後,用過硫酸鈉—硫酸系的pH 的軟蝕刻劑進行軟蝕刻處理。然後,用PD404(Shipley_Fareast 股份有限公司製,PH&lt;1)進行預浸步驟。紐,浸潰於包含氣化亞 錫,匕鈀的PH1的酸性Pd—Sn膠狀溶液[CAT44,啊㈣謂贫 (股)公司製]中’使作為無電解銅電锻核(觸媒金屬)的把在錫—把膠 狀的狀態下吸附於絕緣基材上。 179 201146113 股份JHPH&lt;1 的催化纏液(ACC19E,Shipley-Fareast 殘留SBR胃’ f徹底被剝離。此時’在絕緣基材表面上未 iShiDle P 、、碎片等。然後,將絕緣基材浸潰於無電解電鍍液 P fareast股份有限公司製的CM328A、c 中進行無電解銅電鑛處理。 雷辦,電,電錄處理’在該電路溝槽上形成厚度㈣的 、、盖诚Γ m。貫&amp;無電解銅電鏟處理(填滿電^^到填埋該電路 / θ。另丄,杉潤性樹脂覆膜的膨潤度根據以下方式求得。 ⑽V在脫核紙上塗佈用來形成膨潤性樹脂覆膜的SBR懸浮液,在 ㈣3G分鐘的乾燥。藉此形成厚度2μ_樹脂覆膜。然後, 強制剝離所形成之覆膜,製得試料。 〇然Ϊ !所製得之試料秤取〇.02g左右。將此時的試料重量當 作膨潤前:ft m(b)。織,將所秤取之試料浸潰於廉21的氫氧 化鈉5%水溶液l〇ml中經過b分鐘。另外,其他試料也同樣浸潰 於20±2 C的鹽酸5%水溶液(pHi)i〇ml中經過15分鐘。 然後用離心^離器以10〇〇(}進行約1〇分鐘的離心分離處 理’ 去试料所附著之水分等。然後,測量離^分離後的膨潤試料 ^重量,當作膨潤後重量m(a)。從所得到的膨潤前重量m(b)以及 月心潤後重里m(a) ’根據「膨潤度sw=[m(a)—m(b)] /m(b) X100 (%)」 的异式,异出膨潤度。另外,其他條件準用j!SL1〇15 8.27 (鹼性膨 潤度的測量方法)進行。 此時’對pH14的氫氧化鈉5%水溶液的膨潤度為750%。另一 方面,對pHl的鹽酸5%水溶液的膨潤度為3〇/〇。 (實施例2—2) 除了將該二氧化矽粒子含有量為3〇質量%的絶緣基材,用5〇 質量%的絶緣基材取代以外,其他與實施例1相同。 (實施例2 — 3) 除了將含有平均粒子徑為〇.5μηι的二氧化矽粒子的絶緣基 180 201146113 t 的二氧切粒子的躲基材取代以 (實施例2—4) 除了將含有平均粒子徑為〇 5μπι的二氧化石夕粒子,且該 為=質量°/=絶緣基材’用含有平均粒子徑為15哗的二氧=石夕 ^相^該&amp;有量為5G f 4%的絶緣基材取代以外,其他與實施 (實施例2 —5) 含有平均奸徑為G々m的二氧化辦奸,且該含有量 為30貝虿〇/0的絶緣基材,用含有平均粒子徑為j如力二氧化石夕 粒子且„亥各有i為75質量%的絶緣基材取代以外,其他盘 例1相同。 /'、 (實施例2 —6) 除了將含有平均粒子徑為〇.5μιη的二氧化石夕粒子的絶緣基 材’用含有平均粒子徑為〇.〇5μίη的二氧化石夕粒子的絶緣基材取代 以外’其他與實施例1相同。 (實施例2 — 7) 除了將含有平均粒子徑為〇.5μιη的二氧化矽粒子,且該含有量 為30質量%的絶緣基材,用含有平均粒子徑為〇 〇5μιη的二氧化矽 粒子,且該含有量為50質量。/。的絶緣基材取代以外,其他與實施 例1相同。 (比較例2—1) 除了用未含有填料的絶緣基材[由雙紛Α型環氧樹脂(DIC股 伤有限公司製的850S)與作為硬化劑的二氰二胺(日本Carbide工業 股份有限公司製的DICY)所構成的基材]作為絶緣基材以外,其他 與實施例1相同。 、 該實施例2—1〜7以及比較例2 — 1根據以下方式進行評價。 (電路溝槽的形狀) 首先’將已形成電路溝槽的絶緣基材朝與該電路溝槽的延伸方 向垂直的方向,在7處位置切斷。用顯微鏡(Hirox股份有限公司製 181 201146113 的ΚΗ-77〇0)觀察該切斷剖面。然後,根據以下的評價基準進行評 價。 ◎.完产沒有確認出有樹脂溶出的位置(〇處位置)。 確f出有樹脂溶出的位置,在7處位置中,有1處位置。 △ .^忍出有樹脂溶出的位置,在7處位置中,有2處位置。 X ·確認出有樹脂溶出的位置,在7處位置中,有3處位置以 (電鍍未附著) ,由該無電解電鑛在絶緣基材的電路溝槽(寬度2_、長度 之電鍍層,在進行填滿電鍍之前,用顯微鏡_〇乂 1有限么司製的ΚΗ-7700),觀察所形成之電鍍層整體。然後, 根據以下的§平價基準進行評價。 〇 Δ ◎.完,沒有確認出未形成電鍍層的位置⑴處位置 確,出未形成電鑛層的位置,有1處位置。 確認出未形成電鑛層的位置,有2處位置。 X :確認出未形成電顯的位置,有3處 (電鍵剝離) ^ ίο 解,在絶緣基材的電路溝槽(寬度2_、長度 mm) ^成之電鑛層,在進行填滿電鑛之前用顯微鏡(Hirox 股份有限公司製的KH—7700偷疚辦取士々、 據以下断傭準進餅祕所軸之魏層整體。然後,根 ◎.元王/又有確認出電鑛層剝離的位置(〇 〇:確認出電鍍層剝離的位置,有1處位置。 Λ I確認出電鍍層剝離的位置,有2處位置。 X :確認出電鍍層剝離的位置,有3處 上述評價結果顯示於表i。 置乂上。 [表1] 填ί] 畔 填料的平均粒子徑 /電路溝槽的深度 (%) -----— 平均粒子徑 (//m) 含有量 (質量%) 電路溝槽 的形狀 電鍍未 附著 電鍍 剝離 1贯施例1 1 0.5 30 ◎ ◎ 182 201146113The inner surface of the through hole L5 is subjected to degumming treatment to remove the slag L11, except that ϊΐ, 杳1 fi 3 ΪΪ is removed. By the desmear treatment, the main M is roughened, and the surface roughness of the inner surface of the through hole L5 becomes large. The resin becomes thicker. After the rubber is processed, as shown in Fig. 38(D), the s: 2i τ J is deplated. At this time, at the bottom of the through hole L5, the gas is exposed as a nucleus, and the layer is formed on the inner side of the through hole L5. Alternatively, the second side of the through hole L5 can be pressed and pressed. Mine treatment. This day, the car is out of the 筮Τ7 λλΓ The plating layer of this temple is deposited from the bottom of the through hole L5, and the electric ore layer is filled with the through hole U. 166 201146113 Next, as shown in Fig. 38(E) The film L8 is formed on the surface of the second insulating layer L1 (film forming step). Next, as shown in Fig. 39 (A), part of the resin film L8 is removed, and at the same time, the removing blade is further The resin is removed from the surface of the first insulating layer L1 to form a circuit trench L4 on the second rim edge sound L1 (circuit trench forming step), if the circuit is formed after performing desmear treatment on the inside of the via hole The groove L4, so that the surface roughness of the circuit trench is more than a portion of the through hole L5__table_roughness L4 overlaps with the through hole L5, and the upper portion of the through hole u is integrated with the circuit trench l^. · The road groove L4_' is set to guard the hiding, so that the surface (10) of the inner surface of the Weilu groove w is Ra in a range of preferably 0.01 to 〇5 。. Next, as shown in Fig. 39(B), 电镀' is coated on the circuit trench L4 and the outer surface of the resin with a plating catalyst or its precursor L9 (catalyst coating step). ',,, as shown in Fig. 39 (C) ) shown by 'swelling or dissolving the resin 8 with a predetermined liquid to ϋ: (fine removal step) ^» by this step, the potty: the resin film formed outside the circuit groove L4 formed by laser processing The electric sputum on the surface of L8 or its precursor will be the lei iLH39(D)i of the =, and the internal surface of the residual electrocatalyst or its precursor L9 ΓΛ ^ 解, so that the electric ore layer grows inside the electricity = 枰 L4, and forms a second electrical circuit [2. 4 electric tower correction by this] in the circuit clearing groove L4 set the first - 歯 赍攸 二 two second conduction the second Electrical circuit port and the second circuit board L10. The clothing is made as shown in Fig. 35 [Third manufacturing method] The substrate is described in detail. The common method of the method is omitted. First, it is the same as the first manufacturing method, such as 罔The first electrical circuit P is disposed on the L6, and is further disposed on the first insulating layer 167 201146113. On the second insulating layer L1, as shown in item 4 (B), The resin film L8 is placed, but the resin is removed from the surface of the second insulating layer L1 to rise the circuit trench L4 in the second insulating layer (circuit trench forming step). When the alkali battery slot L4 is used, the processing is set. The cake is such that the inner surface of the trench U of the circuit is in the range of preferably α〇1~〇5μιη. Next, as shown in FIG. 4(C), the circuit trench L4 is included. The second surface of the inner surface, including the plating catalyst or its precursor L9 (catalyst coating step 4 dielectric coating treatment, can be read on the circuit L4 _ surface and not = 9 shot to read the second insulation layer L1 The entire surface is covered with a catalyst or its precursor το = 'such as ^ (10) (9) * 'to the second insulation covered with electric orthodontic catalyst or its precursor 9 = circuit groove L4 _ surface The outer surface of the layer u is subjected to an electric power = J treatment to form an electroless plating film L1 (electric money processing step). Using the electrician 箸Ϊΐπΐ Figure 41 (Α), on the second insulating layer L1, the bottom surface of the wei ί 沟槽 沟槽 到达 到达 到达 到达 到达 L 11 11 11 11 11 11 11 := (8) where f is, the _ is performed on the through hole L5 to remove the 袓^2 s. According to the desmear treatment, the surface of the inner surface of the through hole L5 is deeper in the inner surface of the resin L5, and the thickness of the inner surface of the inner surface L5 is increased. Since the electroless plating film L1G of the circuit trench L4 is covered, the circuit trench L4_ does not face. Because ^ becomes rough. Therefore, the surface roughness of the inner surface of the circuit groove u is smaller than the surface roughness of the inner surface of the pupil L5. After the slag treatment, as shown in Fig. 41 (〇, the second insulation layer L1 is not converted to the outside. The scale, the Wei test (4) and the first electrical circuit L7 in the through hole function as an electric core. The function of the electric shovel layer is on the side of the road L8 _ side, the inner side of the through hole L5 and the second insulating layer u. For this, a second electrical circuit u is formed inside the circuit trench L4, = 168 201146113 hole L5 A dielectric layer L3 that electrically connects the second electrical circuit L2 and the first electrical circuit L7 is formed on the inner side, and the plating layer is further grown on the surface of the second insulating layer L1. Alternatively, the first electrical circuit L7 and the electroless plating film L10 may be provided. Electrolytic ore treatment is applied to increase the thickness of the electric ore layer by applying a voltage. Next, as shown in Fig. 41 (D), the electrodeposited layer on the surface side of the first insulating layer L1 is removed by a CMP (Chemieal Meehanli Polish) method. Thereby, the surface of the second insulating layer L1 and the surface of the first electric circuit L2 are exposed to the outside. Through these steps, the circuit board L10 shown in Fig. 35 is produced. '[Seventh embodiment] The present invention More about a circuit base that can be used in various electronic and electrical devices In order to achieve high performance of electronic and electrical devices, it is desirable to have a circuit board that is wired in a fine and high-density manner. In order to form a circuit in such a subtle and masculine manner as in this case, a conventional document is disclosed in an insulating base. The groove is formed on the surface of the material, and the groove is filled with a metal conductor to form a circuit (see, for example, Japanese Laid-Open Patent Publication No. 2009-81211, etc.). The trench is filled with a metal conductor to form a circuit, and the micro-density and south density can also prevent the circuit from being broken, ensuring the insulation between the circuit and forming a circuit with high reliability. The J-type system indicates the insulating substrate M1. The trench M2 is filled with the metal conductor M3 to recognize the circuit substrate formed by the electric quantity = 4. That is, first, as shown in the figure, the entire surface of the insulating substrate M1 also includes the inside of the trench M2. Case 2 Electrocoating: 电ίϊElectrical ore catalyst for electric ore Μ5. Next, it is impregnated and smashed with electroless Wei, thereby applying the electrolysis ore film attached to the electric ore catalyst Μ5. Membrane Μ 6 (6) Figure 48 (c) On the entire surface of the insulating substrate M1, which is shown in the second part, after the electrolysis, the thick 'like to form the electroless Wei film ^ 边 side 1, the electrolytic key film through the direct current, while immersing the electrolytic band y electrolysis The electric ore layer M7. Hunting is deposited on the surface of the electroless electroless ore film 169 201146113 = 6 like this groove, and the electrolytic plating layer M7 can be deposited in the groove (10) by the electroless electric clock film M6 and the electrolytic electric ore. The metal conductor M3 composed of the layer M7. At this time, the electroless ore film M6 or the electrolytic plating layer M7 is also formed on the surface other than the groove M2 of the substrate M1, after forming the electric (four) plating layer M7 as described above, The surface of the ground insulating substrate M1 is removed as shown in Fig. 48(E), and the electroless plating film M6 or electrolytic electrowinning layer exposed on the surface of the insulating substrate leg is removed, thereby making each groove The metal _ M3 filled in M2 is independent of each other, and the circuit M4 is formed by the metal conductor M3 in the trench M2. As described above, by performing electroless plating and electrolytic plating, the metal conductor M3 can be filled in the trench M2 to form the circuit M4. However, in the conventional embodiment of FIG. 48, the 'trench M2_filled metal conductor (10) is mostly formed of electric ore, and the metal conductor M3 formed by electrolytic plating like this has a crystal grain size combination. Not uniform (refer to Figure 47 described later). Then, when the size of the crystal grains is not uniform, the mechanical properties, thermal characteristics, and electrical characteristics of the conductor M3 are lowered, and the reliability of the circuit M4 causes a problem. In view of the above problems, it is an object of the present invention to provide a circuit board capable of forming a metal body in a trench for circuit formation by crystallization of fine particles and fine crystal grains, and the reliability of the circuit is high. In the circuit board of the present invention, the circuit forming trench M2 is formed on the surface of the insulating base substrate M1, and the metal conductor M3 formed by plating is filled in the trench forming river 2 for circuit formation, and the crystal grain of the metal conductor M3 is formed. The average diameter is less than 1〇. μ If the metal conductor Μ3 filled in the trench M2 for circuit formation has an average diameter of 1 〇μηι or less, which is formed by an average and fine crystal granule, it can be improved. Mechanical properties, thermal characteristics, and g gas characteristics of the metal conductor M3. Further, in the present invention, the metal conductor M3 in the trench M2 for circuit formation is formed by electroless plating. By forming the metal conductor M3' by electroless plating as described above, the metal conductor can be formed by granules which are averaged and fined as described above. 170 201146113 That is, the seventh embodiment of the present invention includes the following technical contents. A circuit board of claim 7, wherein the circuit forming trench is formed on the surface of the insulating base material, and the gold forming f-forming conductor formed by plating is filled in the circuit forming trench. The average diameter of the crystal grains of the conductor is 1 μm or less. The circuit board as recited in claim 7, wherein the metal conductor in the trench for forming a circuit is formed by electroless plating. According to the present invention, the metal « M3 ' filled in the trench Μ 2 for circuit formation is formed by electroplating, and the average diameter of the crystal granules is 1 〇 μηη u and is formed by average and fine crystal grains. Therefore, the mechanical properties, thermal characteristics, and electrical characteristics of the metal conductor river 3 can be improved, and a highly reliable circuit Μ4 can be formed. The following is a description of the embodiments of the present invention. The insulating base material M1 of the present invention is not particularly limited as long as it is manufactured by a Kelvin circuit board. Specifically, for example, a resin-containing grease raft is used as long as it is a manufacturing process that can be used for a circuit board. In addition, the resin of the organic substrate may be, and the others are not particularly limited. Specifically, the case of the ether ether, the bismuth, the miscellaneous, the polyphenylene ii tree, the chlorate vinegar resin, the benzopyrene resin, Double Malay face ring _Wei fine purpose, silk benzene ride _ lion's purpose, double shaft in the dilute ring of the five difficult 'only 妓 妓 射 电 电 职 职 if if if if if if if 魏 魏 魏 魏 魏 魏 魏 魏 魏. Specifically. This is also a type A epoxy resin, a double-aged F-type epoxy resin, and a double-sided S-type ring. Each of the above-mentioned epoxy resins may be used alone: == 171 201146113 A phenol-based curing agent, an acid anhydride-based curing agent, an aminotriazine phenolic curing agent, and an acid cool resin. The phenolic curing agent is, for example, a hardening agent such as a phenolic type, an aromatic type or a terpene type. In order to further impart flame retardancy, a phosphorus-denatured phenol resin or a phosphorus-denatured cyanate resin or the like may be used. These hardeners may be used singly or in combination of two or more. Further, although it is not particularly limited, since a circuit pattern is formed by laser processing, it is preferable to use a tree having a good absorption rate of laser light in a wavelength range of 100 to 400 nm. Specifically, for example, a polyimide resin or the like. The insulating substrate M1 may also contain a filler. The filler may be inorganic fine particles or may be fine particles, and is not particularly limited. Since the filler is contained, the filler in the laser processing portion is exposed, and the unevenness of the filler can improve the adhesion between the plating and the resin. (3) Materials constituting the inorganic fine particles, specifically, for example, alumina (a12〇3), magnesium oxide (MgO), boron nitride (BN), aluminum nitride (A1N), cerium oxide (Si〇2) , high dielectric constant filling material such as titanic acid (BaTi〇3) 'titanium oxide (Ti〇2); magnetic filling material of hard ferrite magnet f; magnesium hydroxide (10) (〇h) 2), (A1 (〇h) 2), three _ records (Sb > 2 〇 3), pentoxide (% 2 〇 5), strontium salt, zinc sulphate, saponin, (CaC 〇 3), mica, and the like. The above inorganic fine particles may be used singly or in combination of two or more kinds. These inorganic fine particles 'have high heat conductivity, relative dielectric properties, heterogeneity, her distribution, and color degree of freedom. Therefore, when the desired performance is achieved, 'proper blending and particle size design can be performed. Ten, the purpose of extreme enthusiasm and filling. Further, although it is not particularly limited, when the insulating substrate M1 is formed on the surface, it is preferable to use a filler having an average particle diameter of at least one, and it is particularly preferable to prepare an average particle diameter in the range of ~1_ 〇.〇5μιη~5μηι range of fillers. In the insulating substrate M1, in order to improve the decane coupling agent, the eutectic coupling agent may also be contained in the insulating substrate M1. Off Vinyl Wei, stupid thief = Wei Wei, Shuji Wei series, amine Wei system, olefinic oxime 糸 'methacryl oxime oxane system, acrolein 172 201146113 coupling _. The above-mentioned Wei even t μι Dispersant may be separately produced, or two or more types may be used in combination. ^ On i Road: Organic microparticles, specifically, for example, rubber particles. The πίί ΐt insulation ί#Μ1 is not particularly limited, and specifically, it can be used for pre-reading and molding of a two-dimensional job. The insulating substrate is defined, for example, in the case of a sheet, a film, or a prepreg, and is 10 to 200 μm, more preferably about 2 to 100 μm. A groove for forming a circuit on the surface of the miscellaneous substrate M1 is as shown in Fig. 44(A). The groove (10) is formed in the same pattern shape as the circuit pattern provided on the surface of the insulating substrate M1. The method of ϊΐΐί circuit shape groove M2 is not specific, for example, ϋίίί L performs laser reinforcement, die-cutting, or profile processing to form the desired pattern shape, width and depth.曰 “: work method, etc. When you want to form a fine circuit with precision, you should use laser plus ^. If you use laser plus king, you can freely adjust the cutting depth and other parameters by changing the laser output. For the press-type processing, it is preferable to use a molding method using a fine resin as used in the technical field of nano-printing. A through-hole of a portion such as a hole is used as a groove for the circuit formation. The step of forming the trench M2 on the insulating substrate M1 defines the pattern shape and width of the circuit formed on the insulating substrate M1. The width of the trench M2 is not particularly limited. When laser processing is used, it is easier to form the trench μ] with a fine width having a line width of 20 μm or less. Further, the depth of the trench M2 becomes the thickness of the circuit M4. As described above on the surface of the insulating substrate M1 Forming trenches for circuit formation After M2, the plating catalyst M5 is attached to the surface of the insulating substrate M1 on the side where the groove m2 is formed. The electric ore catalyst M5 is attached to the periphery of 173 201146113 including the groove m2 as shown in Fig. 44(B). The surface of the insulating substrate M1 is in the surface of the insulating substrate M1. The medium M5 serves as a core for depositing the plating metal when electroless plating is performed. Regarding the electric medium M5', it is sufficient to use a conventional catalyst for electroless money, and the pottery has no limitation. Alternatively, it can also be coated with a (four) plated precursor to make electricity. Specific examples of the electric clock catalyst M5 include, for example, metal palladium (tetra), platinum, (Ag), or the like, or a precursor formed of these metals. For the method of coating electroplating_milk (including its precursor), for example, the method of treating the re-mixed solution after the pH value 丨~3 is carried out under the condition of _ acidic pd-%. Specifically, for example, the following method. First, on the surface of the insulating substrate M1 on which the circuit shape M2 is formed, the oil or the like is subjected to a predetermined time in the solution (cleaner, blending agent) of the surfactant. Then, if necessary, it is treated with a soft side agent of sodium persulfate-sulfur. Then, it is pickled with an acid such as a sulfuric acid aqueous solution or a hydrochloric acid aqueous solution having a pH of 1 to 2. Next, it was immersed in a treatment of the surface of the stannous chloride m at a concentration of about G. 1%. After that, it is immersed in an acidic plating catalyst colloidal solution containing an acidic Pd~~Sn colloid such as an f f1 value of 1 to 3 to reduce and adsorb Pd and Sn H in the adsorbed limb (Asia A redox reaction occurs between tin and chlorination (3⁄43⁄4+pdcl2—SnCU + , catalyzed by a catalyst, ie, metallurgical β), and the other is a conventional solution. Acidic pd-=glue. _solution, etc. can also take into account the commercially available "platform" of the miscellaneous solution. For such procedures, for example: Roj^^dHaas Electronic Materials Co., Ltd. After the plating catalyst M5 is attached to the surface of the insulating base material M1 including the inner peripheral surface of the trench for forming a circuit, as described above, the electroless ore portion f is performed. For the electroplating treatment, the f-edge substrate M1 coated with the electro-mineral catalyst M5 may be impregnated into the electroless plating solution to deposit an electroless plating metal on the 4-position of the plating catalyst M5. Method, etc. Metals that can be used for electroless plating 'for example: copper (〇1), nickel (Ni), cobalt (c〇), 174 201146113 Weaving _ excellent electrical properties is better, it is better than ί ^, the resistance of the new or the solder is excellent, the electric money can be as shown in Figure 44 (c), forming very On the entire surface of the thin insulating substrate M1. In addition, 2 ^, # ^^^ The film thickness of the base coffee, such as the insulating substrate mi of the electroless plating film M6, is impregnated in the mine In the electroless electroless ore with increased speed, continue electroless hunting. Continue electroless plating like 14 samples, as supplemented by 5144(9), precipitate electroless neodymium on the solution of yi=8 and stack electroless galvanic, M ? Yun 2...*Electrically rolled electric ore layer Μ8 fills the interior of the trench Μ2, and then electrolyzes the non-electrolytic gangue 6 and the electroless plating layer Μ8 in the trench-like conductor tS. The treatment of the electric ore until the electroless plating layer should be used to fill the trench = inner. At this time, the electroless ore film Μ6 is also formed on the surface of the insulating substrate M1 of the trench Μ2, in the insulation On the surface of the substrate M1, an electroless ore layer is also accumulated. Then, by grinding the surface of the insulating substrate M1, it is absolutely necessary. The electroless plating film and the electroless plating layer M8 which are exposed on the surface of the substrate M1 are removed. The polishing is not particularly limited, and for example, CMP (Chemical Mechanical Polishing) can be carried out. CMp method a method of polishing the surface of the insulating substrate M1 with a polishing pad while flowing the polishing liquid. The electroless plating film river 6 protruding from the surface of the insulating substrate M1 and the etching liquid may be roughly used before the CMP method is performed. The electroless plating layer M8 is dissolved and removed. As described above, the electroless plated film M6 and the electroless plated layer M8 on the surface of the insulating base material M1 are removed, whereby "as shown in Fig. 44 (E), The metal conductor M3 composed of the electroless ore film M6 and the electroless key layer M8 filled in the trench M2 is independent of each trench M2, and the metal 175 201146113 filled with the trenches M2 forms the circuit M4. . The metal conductor M3 forming the circuit M4, by grinding, "the surface forms a single-surface with the surface of the insulating substrate M1. Then, due to the body M3, as described above, the electroless plating is performed" = the conductor M3 will It is formed by the average and fine crystals of the granules. (Ref., Zhao Xiu, Na, electrical characteristics. Here, the size of the crystal grain of the metal conductor M3, the average diameter length is set to be less than 5 μηη, preferably Below 3μηη. The smaller the melon length of the crystal grain block, the better, the lower limit of the wire is set. The average diameter of the crystal fiber is long, and the crystal grain of the metal wire Μ3 can be averaged and fined, and the gold and the conductor are made. The mechanical properties, thermal characteristics, and electrical characteristics of the M3 are improved. The average diameter length is 5 at any position of the SIM image towel obtained as described later _46 or Fig. 47, and the straight line ' of 2 is disposed in the 1st division The average 値 of the length of each crystal grain block is calculated for each crystal on the straight line above the line ί ί Γ Ϊ li li % li li li li li li li li li li li li li li li li li li li The number of f blocks 'divide the excitation by the crystallization The average diameter length of the block can be obtained by the number of blocks. The age H table * Another embodiment of the present invention. The embodiment of Fig. 44 is electrically, and the medium M5 is formed as shown in Fig. 44 (9). Then, as shown in FIG. 44(c), a very thin electroless ore film M6 is formed, and on the electroless electric clock film M6, ',, electrolytic cell layer VT8' is formed in FIG. 45. In the aspect, as shown in FIG. 45(A), after the plating catalyst M5 is attached to the surface of the insulating substrate m including the trenches (10) and (4), the insulating substrate M1 is continuously immersed in the electroless plating. In the liquid, as shown in Fig. 45(B), a very thin electroless plating film M6 is not formed, but only the electroless ore layer M8:t is buried in the trench M2_, that is, only The electrolytic key layer is filled with a metal conductor M3 inside the trench M2. At this time, the electroless plating layer M8 is formed on the surface of the insulating core in addition to the trench M2_, and the surface of the insulating substrate M1 is formed. The electroless ore layer (10) is removed by polishing, whereby the metal conductor milk can be filled in each of the grooves M2 as shown in FIG. 45(C) to form the circuit M4. 176 201146113 Hereinafter, the manufacturing method of the present embodiment will be described in more detail based on the embodiments. In addition, the details of the present invention are not intended to call any example of τ. (Example 1)环氧 的 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧'Laminage _, is a butanone _ κ) suspension coated with styrene in the main surface of the oxy-corrosion tree, coated with styrene (polyfisBR) [Japan (stock) company, 600, particle diameter 2 〇〇nm, the solid form component is 15%], and it is obtained by drying it at 8 过 for 30 minutes. Then, a groove having a shape as shown in Fig. i (9) is applied to the epoxy resin substrate on which the film has been formed by using a laser and having a depth of two. In addition, the Rayman is a MODEL5330 manufactured by ESI Corporation equipped with a UV-YAG laser. , 壬Μ^ΐ, 'Immerse the epoxy resin substrate of the domain trench in the cleaning and conditioning agent [Interface, grasp t liquid 'PH&lt; 1,: RGhmandHaas Electronic Materials Co., Ltd. C/N3320] After editing, wash with water. Then, soft magnetic treatment was carried out using a soft sodium sulfate-sulfuric acid pH &lt;1. Then, use the PD side array pley Fareast (stock) company Ξοίΐ 气f gas. Then, 'impregnated in a gelatinous solution containing stannous chloride and 1 bar of chlorinated, 夂-Sn [CAT44, manufactured by Shipley-Fareast Co., Ltd.] Resin ^^1 without electric shock is difficult to achieve in a tin-like state T adsorbed on the epoxy VIII q H impregnated in the catalyst solution [ACC19E, ShiPley_Fa_(share) of ρΗ&lt;1 to produce a nucleus. Then, the epoxy substrate was recorded as 5% liquid of pHi4 + ultrasonically treated and immersed for 1 G minutes. As a result, the green® of the surface is completely peeled off. At this time, there are no film fragments or the like on the surface of the epoxy resin substrate. New Zealand, the epoxy resin substrate was immersed in electroless A, CM328L, CM328C, and Shipley-Fareast Co., Ltd.] for electroless copper plating treatment. (4) Hii solution plating treatment 'analysis 4 thickness electric shock coating. (Sweeping A-type microscope) Observing the epoxy substrate which was subjected to electroless copper plating treatment. The electroless ore film was formed correctly in the portion where the processing was performed in the county. 177 201146113 The swelling degree of the other 1 swellable resin film was computed by the following. . The SBR suspension for forming a swellable resin film was coated on the release paper, and dried at 80 C for 30 minutes. Thereby, a resin film having a thickness of 2 μm was formed. Then, the formed film was forcibly peeled off to prepare a sample. Then, the prepared sample is weighed to about 2 g. The sample weight at this time was taken as the weight m (b) before swelling. Then, the sample taken from Cong was immersed in 2 (four). The sodium hydride of c 5 〇 /: aqueous solution l 〇 ml passed ls minutes. Further, other samples were also immersed in 1 〇ml of 20 ± 2 C hydrochloric acid 5% aqueous solution (pH 1) for 15 minutes. Then, the centrifugal separation was carried out by using a centrifugal separator at 1 〇〇〇G for about 1 minute, and the moisture attached to the sample was removed. Weaving, measuring (4) The weight of the swelled sample after separation is taken as the weight m (a) after swelling. From the obtained pre-swelling weight m(b) and Ϊ, weight; m(8), the degree of swelling was calculated from the "swell degree SW, (8) - (%)" equation". In addition, other conditions are subject to the measurement method of 验8ί1〇ΐ5 8 test swelling. At this time, the degree of swelling of the 5% aqueous solution of sodium hydroxide of ρΗ14 was 75〇%. On the other hand, the degree of swelling of the aqueous solution of PH1 in hydrochloric acid was 3%. (Example 2) θ In addition to the polymer containing an enemy group [manufactured by Sakamoto Zeon Co., Ltd., the acid equivalent weight is 5 〇〇, the average molecular weight of the aliquot is 25 _ 'solid form component 2 ()% styrene-butadiene The butanone _K) suspension of the Qiu 1 (ship) (manufactured by 曰本z(10)(股), the acid equivalent 600' particle diameter 2〇〇nm, solid form component, other than the example i The swelling degree of the 5% aqueous solution of sodium hydroxide in PH14 is %. On the other hand, hydrochloric acid 5 for PH1. /. The degree of swelling of the aqueous solution was 3% by weight. w·Remedy for the manufacturing method of the above-mentioned "brake", the swelled portion of the age-peeling swelled portion. Therefore, it can be correctly electrolessly plated on the part touched by the coin. In addition, since the lining resin is more easily covered by the lion, the film removal step is easier and more accurate. Then, the SEM (scanning type mirror) is used to observe the vertical cross section of the electric wire 178 201146113 obtained by the above-mentioned formula with respect to the longitudinal direction of the circuit trench. The thickness of the formed film is about 5 μm, and the depth D of the circuit trench is about 2 〇 ^, and the T/D is about 〇.25. (Second Embodiment) Hereinafter, a manufacturing method of the present embodiment will be described more specifically based on examples. In addition, the model 15 of the present invention is not explained by the following examples (Example 2-1). First, the dioxin of the average particle diameter α5μηΐ (Admatechs j limited public SO-C2) ), 850S), which is a double-enzyme A, and dicyandiamide (a Japanese-made company) The insulating substrate is a substrate in which the content of the oxygen-cut particles is % by weight and the thickness is ΙΟΟμηι. Next, a film of a styrene-butadiene (SBR) having a thickness of 2 μm (resin coating) was formed on the surface of the insulating base material. Further, the formation of the film is carried out on the main surface of the J-edge substrate, and a butanone-butadiene copolymer (·butanone K) suspension is applied [manufactured by Zeon Co., Ltd., acid equivalent). _, particle diameter · nm 'solid form component 15%] 'and at 80. (3) After 30 minutes of drying, the insulating substrate having the resin film formed thereon was subjected to laser processing to form a circuit groove having a substantially rectangular cross section having a width of 2 μm, a depth of 20 μm, and a length of 30 mm. 'Laser and Guard uses a laser light irradiation device (MODEL5330 manufactured by ESI Corporation) equipped with a UV-YAG laser. Next, the insulating substrate on which the circuit trench has been formed is immersed in a cleaning agent (surfactant solution, PH&lt;1: C/N3320 manufactured by Rohm and Haas Electronic Materials Co., Ltd., followed by washing with water. Then, soft etching was performed with a soft etchant of sodium persulfate-sulfuric acid pH. Then, PD404 (Shipley_Fareast) was used. Co., Ltd., PH&lt;1) pre-dip step. New Zealand, impregnated with acidic Pd-Sn colloidal solution containing PH1 of gasified stannous, palladium-palladium [CAT44, ah (four) is poor (share) company] In the case of the electroless copper forging core (catalytic metal), it is adsorbed on the insulating substrate in the form of a gel-like state. 179 201146113 The catalytic entanglement of the shares JHPH&lt;1 (ACC19E, Shipley-Fareast residue) SBR stomach 'f thoroughly Stripping. At this time, 'iShiDle P, fragments, etc. are not present on the surface of the insulating substrate. Then, the insulating substrate is immersed in CM328A, c made of electroless plating solution P fareast Co., Ltd. for electroless copper electrowinning treatment. Lei, electricity, and electric recording processing 'formed a thickness (4) on the groove of the circuit, and the cover is smashed. The electroless copper shovel is processed (filling the circuit to fill the circuit / θ). In addition, the degree of swelling of the scented resin film was determined according to the following method: (10) V. The SBR suspension for forming a swellable resin film was coated on the nucleating paper, and dried at (4) 3 G minutes, thereby forming a thickness of 2 μ_. Then, the film formed by the film is forcibly peeled off, and a sample is prepared. The sample is obtained by weighing about .02 g. The weight of the sample at this time is taken as before swelling: ft m (b) Weaving, the sample weighed was immersed in l〇ml of NaOH solution of NaOH 21 for b minutes. In addition, other samples were also immersed in a 5% aqueous solution (pHi) of 20±2 C hydrochloric acid. 15 minutes in i〇ml. Then centrifuge with a centrifuge for 10 minutes. The water is attached to the sample, and then the weight of the swelling sample after separation is measured as the weight m (a) after swelling. The weight m(a) ' is based on the different formula of the swelling degree sw=[m(a)—m(b)] /m(b) X100 (%)”, and the other conditions are used j!SL1 〇15 8.27 (Measurement method of alkaline swelling degree). At this time, the degree of swelling of the 5% aqueous solution of sodium hydroxide to pH 14 was 750%. On the other hand, the degree of swelling of a 5% aqueous solution of hydrochloric acid at pH 1 was 3 Å/〇. (Example 2-1) The same procedure as in Example 1 was carried out, except that the insulating base material having a cerium oxide particle content of 3% by mass was replaced with an insulating base material of 5% by mass. (Examples 2 - 3) In addition to the etched substrate of the insulating layer 180 201146113 t containing the cerium oxide particles having an average particle diameter of 〇.5 μηι, (Example 2-4) The particles having a particle diameter of 〇5 μm are used as the particles of 〇5 μm, and the amount of the material is ==°/=the insulating substrate is composed of a dioxin having an average particle diameter of 15 ==石夕^^^^^ In addition to the replacement of the % insulating substrate, the other (Examples 2 - 5) contain an oxide substrate having an average stalk size of G 々 m, and the insulating substrate having a content of 30 Å / 0 contains The average particle diameter is j, such as the force of the dioxide, and the other is the same as the insulating substrate of 75% by mass. The other disk example 1 is the same. /', (Examples 2-6) The insulating base material of the SiO 2 particle having a diameter of 〇.5 μm was replaced with the insulating substrate containing the SiO 2 particles having an average particle diameter of 〇. 5 μίη. The other example was the same as that of Example 1. (Example 2 — 7) In addition to the cerium oxide particles having an average particle diameter of 〇.5 μιη, and the content is 30 The mass % of the insulating base material was the same as that of Example 1 except that the ruthenium dioxide particles having an average particle diameter of 〇〇5 μm were used, and the content of the insulating base material was 50% by mass. —1) In addition to an insulating substrate that does not contain a filler [from a double-type epoxy resin (850S manufactured by DIC Co., Ltd.) and dicyandiamide as a hardener (DICY, manufactured by Japan Carbide Industries Co., Ltd.) The substrate made of the substrate was the same as that of Example 1 except that it was an insulating substrate. The Examples 2-1 to 7 and Comparative Example 2-1 were evaluated as follows. (The shape of the circuit trench) First The insulating substrate on which the circuit trench was formed was cut at a position 7 in a direction perpendicular to the extending direction of the circuit trench. The cut was observed with a microscope (ΚΗ-77〇0, manufactured by Hirox Corporation, 181 201146113). Then, the evaluation was carried out according to the following evaluation criteria. ◎. The position at which the resin was eluted (the position at the crucible) was not confirmed. The position where the resin was eluted was confirmed, and one of the seven positions was present. △ .^ Endure In the position where the fat is dissolved, there are 2 positions in 7 positions. X · The position where the resin is eluted is confirmed, and in 7 positions, there are 3 positions (electroplating is not attached), and the electroless ore is The circuit trench of the insulating substrate (the width of 2_, the length of the plating layer, before filling the plating, with the microscope 〇乂 700 有限 有限 有限 么 700 700 700 -7-7700), observe the formation of the overall plating layer. Then, according to The following § parity basis was evaluated. 〇Δ ◎. At the end, the position where the plating layer was not formed was not confirmed (1), and the position where the electric ore layer was not formed was found, and there was one position. It was confirmed that there was no position where the electric ore layer was formed, and there were two positions. X: It is confirmed that there is no position where the electric display is not formed, and there are three places (the key is peeled off) ^ ίο solution, the circuit trench (width 2_, length mm) in the insulating substrate is formed into the electric ore layer, and the electric ore is filled. Before using the microscope (KH-7700 made by Hirox Co., Ltd. to steal the gentry, according to the following servants, the whole layer of the Wei layer of the cake secrets was approved. Then, the root ◎. Yuan Wang / confirmed the electric ore layer The position where the peeling was removed (〇〇: The position at which the plating layer was peeled off was confirmed. There was one position. Λ I confirmed the position where the plating layer was peeled off, and there were two positions. X: The position where the plating layer was peeled off was confirmed, and there were three evaluations. The results are shown in Table i. Set on top. [Table 1] Fill in the average particle diameter of the filler/depth of the circuit trench (%) -----—average particle diameter (//m) content (quality) %) The shape of the circuit trench is plated without adhesion plating. 1 Example 1 1 0.5 30 ◎ ◎ 182 201146113

實施例2 Ϊ50 ©) 1 ◎ ◎ 實施例3 實施例4 1.5 30 7.50 ◎ ◎ (〇) 50 7.50 ◎ ©) (r^\ 貧施例5 1.7 75 8.50 ◎ (Q) 實施例6 實施例7 0.05 30 0.25 Δ A △ 50 0.25 Δ 〇 比較例 X X U X 兴;即二軋化矽粒子的絶緣基材的 情況下(實施例2-1〜7)’比起使用未含有填料的絶緣基材的情 況’在形成電路賴時’更能触止在電路雜喊生樹脂溶出問 題。再者’實施例2-1〜7,比起比較例2-1,更能夠防止電鍍未 附著或電鍍剝離的問題。因此,若根據實施例2—丨〜7,便可製得 電氣電路與絶緣基材的密合性較高的電路基板。 (第3實施例) (A)電路基板準備步驟:準備將硬化之錢銅堆疊板(松下電工 股份有限公司製的「R1515T」)的銅箔蝕刻除去以形成既定電氣電 路的電路基板(厚度:500μιη)。 (Β)苐1絶緣層形成步驟:在該電路基板的電路形成面上堆疊 由環氧樹脂片材所形成的第1絶緣層。亦即,將由包含雙酚Α型 環氧樹脂(DIC股份有限公司製的「850S」)、作為硬化劑^二氰二 胺(日本Carbide工業股份有限公司製的rDICY )、作為 劑的2-乙基—4—甲基顿四國化成工動 「2E4MZ」)、作為無機填料的炼融二氧化石夕(電氣化學工業股份有 限公司製的「FB1SDX」)、矽烷偶合劑(Momentive perf_ance Materials Japan有限責任公司製的「A_187」)、作為溶劑的丁酮 (ΜΕΚ)以及Ν,Ν—二甲基甲醯胺(DMF)的樹脂組成物所構成的片 f (厚度:60μιη)載置在該電路基板的電路形成面上,然後,在由該 樹脂組成物所構成的片材的外表面上載置PET薄膜(東洋紡績股^ 有=公司製的「TN100」),將該堆疊體在〇.4pa、i〇(rc下經過j 分鐘的加壓加熱成形使其貼合,之後,再於175〇C下經過90分鐘 的加熱硬化,使該片材硬化。之後,將PET薄膜剥離,以製得在 電路基板上堆疊第1絶緣層的堆疊體。 183 201146113 (C) 開孔形成步驟:對該第1絶緣層,從外表面進行雷射加工, 以在第1電路上形成徑長50μιη的開孔,使第丨電路露出。 工使用具備UV —YAG雷射的雷射光照射裝置(ESI公 = 「MODEL5330」)進行。 '^的 (D) 金屬柱形成步驟·在形成開孔之後,將基板浸潰於 硫酸系蝕刻液經過5分鐘,對因為基板形成開孔所露出之第丨電 的表面進行酸性清洗處理。然後,在用水沖洗之後’為了在基Example 2 Ϊ50 ©) 1 ◎ ◎ Example 3 Example 4 1.5 30 7.50 ◎ ◎ (〇) 50 7.50 ◎ ©) (r^\ lean example 5 1.7 75 8.50 ◎ (Q) Example 6 Example 7 0.05 30 0.25 Δ A Δ 50 0.25 Δ 〇 Comparative Example XXUX; that is, in the case of an insulating substrate of two-rolled cerium particles (Examples 2-1 to 7) 'When using an insulating substrate not containing a filler' When the circuit was formed, it was more able to stop the resin elution problem in the circuit. Further, in Examples 2-1 to 7, it was possible to prevent the problem of plating adhesion or plating peeling more than Comparative Example 2-1. Therefore, according to the embodiment 2 - 丨 to 7, a circuit board having high adhesion between the electric circuit and the insulating base material can be obtained. (Third embodiment) (A) Circuit board preparation step: preparation for hardening The copper foil of the money copper stacking board ("R1515T" manufactured by Matsushita Electric Works Co., Ltd.) is removed by etching to form a circuit board (thickness: 500 μm) of a predetermined electric circuit. (Β) 苐1 insulating layer forming step: on the circuit board Stacking the first insulating layer formed of the epoxy resin sheet on the circuit forming surface That is, it is composed of a bisphenol-based epoxy resin ("850S" manufactured by DIC Co., Ltd.) and a curing agent, dicyandiamide (rDICY, manufactured by Japan Carbide Industries Co., Ltd.) Ethyl-4-methyl-Dynamics, "2E4MZ"), smelting sulphur dioxide as an inorganic filler ("FB1SDX" manufactured by Electric Chemical Industry Co., Ltd.), and decane coupling agent (Momentive perf_ance Materials Japan) A sheet f (thickness: 60 μm) composed of a resin composition of "A_187" manufactured by the limited liability company, butanone (oxime) as a solvent, and a resin composition of ruthenium-dimethylformamide (DMF) is placed thereon. On the circuit formation surface of the circuit board, a PET film ("TN100" manufactured by Toyobo Co., Ltd.) was placed on the outer surface of the sheet composed of the resin composition, and the stack was placed on the surface. 4pa, i〇 (r heat-molded for 7 minutes under rc to bond it, and then heat-hardened at 175 ° C for 90 minutes to cure the sheet. Thereafter, the PET film was peeled off to make Stacking the first insulating layer on the circuit substrate 183 201146113 (C) Opening forming step: Laser processing is performed on the first insulating layer from the outer surface to form an opening having a diameter of 50 μm on the first circuit to expose the second circuit. Laser light irradiation device (ESI public = "MODEL5330") equipped with UV-YAG laser. "(D) Metal column forming step. After forming the opening, the substrate is immersed in the sulfuric acid-based etching solution for 5 minutes. The acid cleaning treatment is performed on the surface of the second electricity exposed by the substrate forming the opening. Then, after rinsing with water,

孔形成位Ϊ上形成金脉’將基板浸潰於啊的無電解銅J鑛二 (上村工業股份有限公司製的「sp_2」)經過7〜8小時,使 開孔底部的第1電氣電路部析出、成長並形成金屬柱。 X (E) 第2絶緣層形成步驟以及皮膜形成步驟:接著.,與該第i 絶緣層?成步驟_,在該第1絶緣層的外表面以及該金屬、柱'的頂 部上堆疊形成與第1絶緣層相同的第2絶緣層(厚度:1〇μιη)。接著 在該第2絶緣層的外表面上使用旋轉塗佈法,塗佈苯乙烯—丁二 共聚物(SBR)的丁酮(ΜΕΚ)懸浮液[日本Ze〇n(股)公司製,粒子俨 2〇〇nm,固體形態成分15%],在贼下經過3〇分鐘的乾燥,以^ 成厚度2μιη的樹脂皮膜。 (F)電關案形成步驟:接著,對已形成獅越的堆疊體, =用雷射加工在既定的位置上形成寬度2()μιη、深度15邮的細德 溝槽作為電路圖案。另外,雷射加工使用具備uv—YAG ESI 公司製的 MODEL5330。 (G)觸媒披覆步驟:接著,將經過雷射加工的堆疊體浸潰於清 潔調和劑(C/N332G)巾’之後用水清洗。然後,為了防止所附著 二錫二把膠狀物的分解,使用PD4〇4[Shipley_Fareast(股)公司製]進 巧預浸步驟。然後’浸潰於觸媒液[CAT44,Shipley Fareast(股〉公司 製]中’使成為無電解銅電鍍核的鈀在錫_銘膠狀的狀態下吸附到 形成有樹脂皮膜的堆疊體上。 (Hy膜除去步驟:接著,將吸附有錫一鈀膠狀物的堆疊體, 置於5%氫氧化鈉水溶液中進行超音波處理並浸潰1〇分鐘,使表面 的SBR皮膜膨潤,並將樹脂皮膜剝離除去。接著,對堆疊體表面 184 201146113 : 確结出有部分發出勞光。確 ;解中S=i:2^ ,,购油“理 ?體====== 式形成由無轉電賴所構成的金屬配線。 Γ^又、 ^外:樹脂皮膜的膨潤度根據以下方式測量。亦即,在脫模 t佈用來魏緣紐上職細旨麵岭佈的舰特液 絲板上所形成之厚 ίϊίίί^ΐί^The formation of a gold vein on the pores is formed. The electroless copper J mine 2 ("sp_2" manufactured by Uemura Kogyo Co., Ltd.) which has been immersed in the substrate is subjected to 7 to 8 hours to make the first electric circuit portion at the bottom of the opening. Precipitate, grow and form a metal column. X (E) a second insulating layer forming step and a film forming step: subsequently, and the ith insulating layer forming step _, stacking on the outer surface of the first insulating layer and the top of the metal and pillar ' The second insulating layer (thickness: 1 〇 μιη) having the same first insulating layer. Next, a butyl ketone (ΜΕΚ) suspension of styrene-butadiene copolymer (SBR) was applied to the outer surface of the second insulating layer by a spin coating method [manufactured by Zee Co., Ltd., Japan) 2 〇〇 nm, the solid form component is 15%], and dried under a thief for 3 minutes to form a resin film having a thickness of 2 μm. (F) Electrode formation step: Next, for the stacked body in which the lion is formed, = a fine groove having a width of 2 () μηη and a depth of 15 Å is formed as a circuit pattern by laser processing at a predetermined position. In addition, the laser processing is carried out using MODEL5330 manufactured by uv-YAG ESI. (G) Catalyst coating step: Next, the laser-processed stack was immersed in a cleaning conditioner (C/N332G) towel, and then washed with water. Then, in order to prevent the decomposition of the adhered ditin, the PD4〇4 [made by Shipley_Fareast Co., Ltd.] was used to advance the prepreg step. Then, it was immersed in a catalyst liquid [CAT44, manufactured by Shipley Fareast Co., Ltd.], and palladium which became an electroless copper plating core was adsorbed onto the stacked body on which the resin film was formed in a state of a tin-gel. (Hy film removal step: Next, the stack in which the tin-palladium gel is adsorbed is subjected to ultrasonic treatment in a 5% sodium hydroxide aqueous solution and impregnated for 1 minute to swell the surface SBR film, and The resin film is peeled off. Then, on the surface of the stacked body 184 201146113: Some of the work is done to emit light. Indeed; solution S=i: 2^, the purchase of oil "physical body ====== The metal wiring formed by the non-transfer electric power. Γ^又, ^外: The swelling degree of the resin film is measured according to the following method. That is, the demoulding of the stripping cloth is used for the Weiyuan New Zealand. Thickness formed on the liquid plate ίϊίίί^ΐί^

齡里1X1。然後’將所秤取之試料浸潰於20±2〇C ^ ’測量離心分離後的膨潤試料的重量,當作膨潤後重 Ξ二根f所付到的膨潤前重量m,以及膨潤後重量m,從「膨潤 ίϋ= 隹ί—mVm,Xl〇〇(%)」的算式,算出膨潤度。另外,其 得=ί 量方法)進行。此時,所 (第4實施例) (Α)電路基板準備步驟:準備將硬化之細堆#板(松下電工 舰雜核碱既定電氣電 ⑼絶緣層形成步驟:在該電路基板的電路形成面上堆疊由環 氧树月曰片材所形成的絶緣層。亦即,將由包含㈣A型環氧樹脂 185 201146113 (DIC股份有限公司製的「850S」)、作為硬化劑的二氰二胺(日本 Carbide工業股份有限公司製的「DICY」)、作為硬化促進劑的2 — 乙基一4 —甲基咪唑(四國化成工業股份有限公司製的 2E4MZ」)、作為無機填料的溶融二氧化發(電氣化學工業股份有 限公司製的「FB1SDX」)、矽烷偶合劑(Momentive Performanee1X1 in the age. Then, 'weak the sample taken at 20±2〇C ^ ' to measure the weight of the swelled sample after centrifugation, and use it as the pre-swelling weight m after swelling and re-squeezing the two f, and the weight after swelling. m, the degree of swelling is calculated from the formula of "swelling ϋ ϋ = 隹ί - mVm, Xl 〇〇 (%)". In addition, it has to be done. At this time, (fourth embodiment) (Α) circuit board preparation step: preparing a hardened thin pile # board (Panasonic Electrician's ship heteronuclear alkali established electric (9) insulating layer forming step: on the circuit forming surface of the circuit board An insulating layer formed of an epoxy resin mooncake sheet is stacked thereon, that is, a dicyandiamide (Japan) containing (a) A-type epoxy resin 185 201146113 ("850S" manufactured by DIC Corporation) as a hardener "DICY" manufactured by Carbide Industries Co., Ltd.), 2-ethyl-4-methylimidazole (2E4MZ manufactured by Shikoku Chemicals Co., Ltd.) as a hardening accelerator, and molten oxidized hair as an inorganic filler ( "FB1SDX" manufactured by Denki Chemical Industry Co., Ltd., and decane coupling agent (Momentive Performanee)

Materials Japan有限責任公司製的「a—187」)、作為溶劑的丁綱 (MEK)以及N,N—二曱基曱醯胺(DMF)的樹脂組成物所構成的片 材(厚度:60μηι)載置在該電路基板的電路形成面上,然後,在由該 樹脂組成物所構成的片材的外表面上載置ΡΕΤ薄膜(東洋 ^ 有限公司製的「麵()」),將該堆疊體在〇愚、 分鐘的加壓加熱成形使其貼合之後,再於175t:下經過9〇分鐘的 加熱硬化,使該片材硬化。之後,將PET薄膜剝離,以製得在電 路基板上堆疊絶緣層的堆疊體。 (C)開孔开&gt;成步驟:對該絶緣層,從外表面進行雷射加工,以 在第1電路上形成徑長50μιη的開孔,使第丨電路露出。雷射加工 ,用具備UV —YAG雷射的雷射光照射裝置(ESI公製 「MODEL5330」)進行。 ff&gt;)金屬柱形成步驟:在形成開孔之後,將基板浸潰於%。 硫酸系烟液經過5分鐘,對因為基板形成開孔所露出之第丨電足 進行酸性清洗處理。然後,在用水沖洗之後,為了在基板爲 么成=上形成金屬柱,將基板浸潰於7()&lt;t的無電解銅電齡 艮公彻「sp—2」)中經過7〜8小時,使電1 攸開^底。卩的第丨電氣電路部析出、成長並形成金屬柱。 佈法形錄驟H在魏緣層的外表面上旋轉8Sheet consisting of "a-187" manufactured by Materials Japan Co., Ltd.), Ding Gang (MEK) as a solvent, and a resin composition of N,N-didecylguanamine (DMF) (thickness: 60 μηι) After being placed on the circuit formation surface of the circuit board, a ruthenium film (face ()" manufactured by Toyo Co., Ltd.) is placed on the outer surface of the sheet composed of the resin composition, and the stack is placed. The sheet was cured by heat-hardening at 175 t: for 9 minutes under pressure heating at a minute and minute pressure. Thereafter, the PET film was peeled off to obtain a stacked body in which an insulating layer was stacked on the circuit substrate. (C) Opening and Opening Step: The insulating layer is subjected to laser processing from the outer surface to form an opening having a diameter of 50 μm on the first circuit to expose the second circuit. Laser processing was carried out using a laser light irradiation apparatus (ESI GM "MODEL5330") equipped with a UV-YAG laser. Ff&gt;) Metal pillar forming step: after forming the opening, the substrate is immersed in %. The sulfuric acid-based liquid was subjected to an acidic cleaning treatment for the first electric foot exposed by the opening of the substrate after 5 minutes. Then, after rinsing with water, in order to form a metal pillar on the substrate, the substrate is immersed in 7 () &lt; t of electroless copper electric age 艮 艮 "sp-2") 7~8 In hours, make electricity 1 open. The electric circuit part of the 丨 is deposited and grown to form a metal column. The cloth recording sequence H rotates on the outer surface of the Wei edge layer 8

Zewurvxi t歸—丁二婦共聚物(SBR)的丁酮(ΜΕΚ)懸浮液[日^ ㈣^ ’粒子徑2GGnm,固體形態成分15%],在8〇°C1 Ά 30》鐘的賴’⑽成厚度—的樹脂皮膜。 利用路圖案形成步驟:接著,對已形成樹脂皮膜的堆疊體, 定的位置上形成寬度2〇叫、深度15师綱 日為電路圖木。另外,雷射加^使用具備UV-YAG雷射&amp; 186 201146113 ESI 公司製的 MODEL5330。 (G)觸媒彼覆步驟:接著,將經過雷射加工的堆疊體浸 主 潔調和劑(C/N3320)中,之後用水清洗。然後,為了防止所附著1 錫一把膠狀物的分解’使用PD404[ShiPley-Fareast(股)公司f ]進 預浸步驟。然後,浸潰於觸媒液[CAT44,Shipley_Fareast(股司7^ 蝴—轉_謝吸附到形成 (^皮膜除去步驟:接著,將吸附有錫—轉狀物的堆叠體, 虱乳化納水溶液中進行超音波處理並浸潰1〇分鐘,使表面 紫外Ϊ膜f ? '並將樹脂皮膜剝離除去。接著’對堆疊體表面昭射 以的確認出有部分發出榮光。確認ίZewurvxi t-butanol copolymer (SBR) butanone (ΜΕΚ) suspension [日 ^ (4) ^ 'particle diameter 2GGnm, solid form composition 15%], at 8 ° ° C1 Ά 30" bell Lai' (10) Thickness - the resin film. The road pattern forming step is employed. Next, a width of 2 squeaks and a depth of 15 divisions are formed on the stacked body in which the resin film has been formed. In addition, the laser is equipped with a MODEL5330 manufactured by ESI Corporation, UV-YAG Laser &amp; 186 201146113. (G) Catalyst and other steps: Next, the laser-processed stack is immersed in a main cleaning agent (C/N3320), followed by washing with water. Then, in order to prevent the decomposition of a stick of tin attached to the 'pre-dip step using PD404 [ShiPley-Fareast Co., Ltd.]. Then, it is immersed in the catalyst liquid [CAT44, Shipley_Fareast (the squad 7 ^ butterfly - _ _ adsorption to formation (^ film removal step: then, will adsorb the tin-transformed stack, 虱 emulsified aqueous solution) Ultrasonic treatment and impregnation for 1 minute, the surface UV film f ? ' and the resin film peeled off. Then 'the surface of the stack is confirmed to have a part of the glory. Confirm ί

Shipleyi!^ 銅電鍍膜。狹铉,、—稭此析出;度扣111的無電解 溝槽填埋。…、订…電解銅電鑛處理(填滿電鐘)直到將該電路 疊體ΪΞ 察㈣以無電解電鍍處理的堆 式形成由無’《高精度的方 紙上塗佈用來在絶緣基 ^方式測置。亦即,在脫模 在下經過成树脂皮膜而塗佈的珊懸浮液, 厚度相同的厚度,亦即厚形f在環氧樹脂基板上所形成之 之皮膜當作試料。#後$ : ’越。紐,強觸離所形成 試料重量當作膨潤料秤取⑽%左右。此時的 在_〇下進彳過^分鐘。織,_心分離器 等除去。然後,測量離心^離後’將試料所附著的水分 刀離後的膨潤试料的重量,當作膨潤後重 187 201146113 根據所得到的膨潤前重量m,以及膨潤後 量m 度 SW= (m—m,)/m,xl〇〇(%「m,從「膨潤 他條件準用jjS u〇15 827 (驗性^ 。另外,其 所得到的膨潤度約為750%。 里方法)進行。此時, (第5實施例) (實施例5 — 1) 首先,在支持體基板上形成絶緣基材尺卜 關於絶緣基材K1的材料,使用句+餹必 股=有限公的「㈣S」)、作為硬二==旨= 工=份有限公司製的「DICY」)、作為硬化促^^日本C^de 2基咪。坐(四_成工業股份雜細製的「2E4j「^基―4 ,填料的球狀的炼融二氧化啊電氣化學 二 ^聰x」,平物η7㈣、魏偶合華 有限責 =司製的「A—187」)、作為溶劑的丁酮 (MEK)以及N ’ N-二f基傾胺㈣^的樹脂組成物。 將由該樹脂組成物所構成的片材狀的絶緣基材κ 板的電路形成面上,紐,在由該樹月曰^ 域置ρετ薄膜(東洋紡績股份有限公 ,製的ΤΝ100」),將該堆疊體在〇 4Pa、i⑻。c下經過ι分鐘的加 ,加熱成形使其貼合之後,再於175t下經過9〇分鐘的加熱硬化 使该,緣基材K1硬化。之後,剝離PET薄膜,製得在支持體基板 上堆疊絶緣紐K1神疊體。職緣紐KH轉料 ^ 後的絶緣基材K1含有75wt%的基材。 1 另外,利用光學顯微鏡觀察絶緣基材K1的表面以及剖面,確 認填料K11未露出,並形成表面樹脂層K12。 然後’在絶緣基材Κ1的表面上形成厚度2μηι的苯乙烯—丁二 烯共聚物(SBR)的樹脂覆膜Κ2。另外,樹脂覆膜Κ2的形成,係在 該環氧樹脂基材的主要表面上,塗佈苯乙烯—丁二烯共聚物(SBR) 的丁酮(MEK)懸浮液[日本zeon(股)公司製,酸當量600,粒子徑 200nm,固體形態成分15%],並在8(TC下經過30分鐘的乾燥所形 201146113 成者。 工开成有樹脂覆膜K2的絶緣基材κι,進行利用雷射加 ρςτ ίίίί槽另外,雷射加工使用具備W—YAG雷射的 Hi i DEU33() °用光學顯微鏡觀察經過雷射加工之後 赚^著壬=,树路溝槽K3舰緣基材K1絲於清潔調和 / 7H&lt;1:RotoandHaas電子材料(股〕公司製 &lt; 1沾1Γ ’之後’用水清洗。然後,用過硫酸鋼一硫酸系的pH 的軟银刻劑進行軟蝕刻處理。鈇後,使用 (股)公司製,PH&lt;1]進行預浸步驟。然後,浸 f f PH1的酸性Pd —%膠狀溶液 2 (股)公蝴,使絲無電解銅魏核的纪 f其前驅物K5截在絶緣基獅的表面上與樹脂覆默,的= I — 八 q ί ΐ’浸潰fpH &lt;1 的催化劑藥液[ACC 19E, ShiPley-Fareast(股) A ° 以產生把核。该把核成為無電解電鑛的電鑛核。 扣立ί、ί,將絶緣基材K1置於pH14的5%氫氧化納水溶液中進行 超 '波處理並浸潰10分鐘。藉此,使表面的樹脂覆膜犯 文到膨麻被徹底獅。鱗,觀緣基材幻表 4 樹脂覆膜K2的碎料。然後,魏緣基材 卿篇、_、CM328C、 進行無電解銅電鍵處理。 ⑺A叫中 利用無電解銅電鍍處理,析出厚度3〜5μιη的盔 觀察經過無電解峨鍍處理的絶緣工材 K1的表面,發縣__加叫部分上正確地形成 膜K6。該無電解電鍍膜K6成為電路層κΐ3。 …、 ’又 另外’膨潤性樹脂覆膜的膨潤度根據以下方式求得。 189 201146113 在脫模紙上塗_來形鋪離姻旨細的舰懸浮液,在 強制鐘的辆。#此形成厚度2μπι的翻旨龍。然後, 強制剝離所形成之覆膜,製得試料。 辦將所製得之試料秤取G.G2g左右。將此時的試料重量當 潤則重i _。然後’將所秤取之試料浸潰於20土2。。的氫氧 1〇ml中經過15分鐘。另外,其他試料也同樣浸潰 ; 〇的孤酸5〇/°水溶液(pHl)lOml中經過15分鐘。 然後二用離心分離器以1〇〇〇G進行約1〇分鐘的離心分離處 LjK料所附著之水分等n測量離^分離後的膨潤試料 ^重量’ ί作膨潤後重4 m⑻。從所得到的膨潤前重4 m(b)以及 月?/ j後重J m⑻,根據「膨潤度sw = [m(a) _ m(b)]/m(b)x】。。(%)」 的算式,算出膨潤度。另外,其他條件準用nS]L1〇158.2性 潤度的測量方法)進行。 此時,對pH14的氫氧化鈉5%水溶液的膨潤度為75〇%。另一 方面,對pHl的鹽酸5¾水溶液的膨潤度為3%。 根據以上步驟’便可製得如圖28所示的電路基板κιο。 (實施例5 —2) 除了使用含有羧基的聚合物[日本Ze〇n(股)公司製,酸當量 500,重量平均分子量25000,固體形態成分2〇%]取代苯乙烯—丁 共聚物(SBR)的丁酉同_κ)懸浮液[日本Ze〇n(股)公司製,酸 當量600,粒子徑200nm ’固體形態成分15%]作為樹脂覆膜K2以 外,其他與實施例1相同。 此時’對ρΗ14的氫氧化鈉5%水溶液的膨潤度為1〇〇〇%。另 一方面,對pHl的鹽酸5%水溶液的膨潤度為3〇%。 藉此,便可製得如圖28所示的電路基板κίο。 若利用以上的實施例的製造方法,藉由剝離膨潤性樹脂覆膜, 便可在基材表面的欲形成電路的部分上彼覆電鍍觸媒。藉此,便可 在彼覆有電鍍觸媒的部分上正確地形成無電解電鍍膜。另外,由於 膨潤性樹脂覆膜會因為膨潤作用而輕易被剝離,故覆膜除去步驟也 比較容易正確地進行。 190 201146113 (苐6實施例) ^ 1〇〇μΠ1 66),在该第一絶緣層L6的一面上,利用 法形成由_構朗厚度2()师、寬度5一 ϋ咸去 作為Α型__忙股份有限公司製的、「=) °、 f 胺(日本Carbide工業股份有限公司i的 γ」)、作為硬化促進劑的2_乙基—4— 電=製:「2職」)' 作為無機填料的球狀= =化啊⑸化學4股份有限公司製的「FB1SDx」,平均 -Γ! (M〇mentive Prance Materials Japan * =A司製的A~187」)、作為溶劑的丁酮(MEK)以及N,N—二 Ιί 旨組成物所構成的厚度ιο〇μιη的片材載ΐShipleyi!^ Copper plating film. Narrow, and - the straw is precipitated; the electroless groove of the 111 is buried. ..., order... electrolytic copper electro-mine treatment (filling the electric clock) until the circuit stack is observed (4) by electroless plating, the stack is formed by the non-"high-precision square paper coated on the insulating base ^ Method of measurement. That is, the film having the same thickness, i.e., the film formed of the thick f on the epoxy resin substrate, was used as a sample in the case of the suspension suspended by the resin film. #后$ : 越越. New, strong contact with the formation of the sample weight as a swelling material weighing (10)% or so. At this time, I entered the _ 〇 ^ ^ ^ ^. Weaving, _ heart separator, etc. are removed. Then, after measuring the centrifugation, the weight of the swelling sample after the water knife attached to the sample is taken as the weight after swelling, 187 201146113, based on the obtained weight before swelling m, and the amount after swelling, m = SW = (m —m,)/m,xl〇〇 (% “m, from “expanding his condition to use jjS u〇15 827 (in addition to ^. In addition, the degree of swelling obtained is about 750%. The method). (Fifth Embodiment) (Embodiment 5-1) First, an insulating substrate is formed on a support substrate. The material of the insulating substrate K1 is used in the sentence "餹(4)S") As a hard second ================================================================ Sit (4E4j "^ base -4, ball-shaped smelting and oxidizing of the filler, electric chemistry, two saga x", flat η7 (four), Wei huahehua limited liability = system "A-187"), a resin composition of methyl ethyl ketone (MEK) as a solvent, and N'N-di-f-decylamine (tetra). In the circuit formation surface of the sheet-like insulating base material κ plate composed of the resin composition, the ρετ film (the ΤΝ100 manufactured by Toyobo Co., Ltd.) is placed in the tree-shaped area. The stack is at 〇4Pa, i(8). After c is added for ι minutes, it is heat-molded to be bonded, and then hardened by heat hardening at 175 t for 9 minutes to cure the edge substrate K1. Thereafter, the PET film was peeled off to prepare an insulating New K1 stack on the support substrate. The insulating substrate K1 after the job is replaced by 75 wt% of the substrate. In addition, the surface and the cross section of the insulating base material K1 were observed with an optical microscope, and it was confirmed that the filler K11 was not exposed, and the surface resin layer K12 was formed. Then, a resin film Κ 2 of a styrene-butadiene copolymer (SBR) having a thickness of 2 μm was formed on the surface of the insulating substrate Κ1. Further, the resin coating film 2 is formed by coating a butanone (MEK) suspension of a styrene-butadiene copolymer (SBR) on the main surface of the epoxy resin substrate [Japan Zeon Corporation] The system has an acid equivalent of 600, a particle diameter of 200 nm, and a solid form component of 15%], and is dried at 8 (TC) for 30 minutes. The insulating substrate κι having a resin film K2 is used. In addition, laser processing uses Hi i DEU33() with W-YAG laser. Observed by laser microscopy after laser processing, 树=, tree channel groove K3 ship edge substrate K1 Silk is cleaned and tempered / 7H&lt;1: RotoandHaas Electronic Materials Co., Ltd. &lt;1 沾1Γ 'after 'cleaning' with water. Then, soft etching is performed with a soft silver sulphuric acid-based pH soft stencil. After that, the prepreg step is carried out by using the company (PH), PH &lt;1]. Then, the acidic Pd-% colloidal solution 2 (stock) of the PH1 is immersed in the flame, and the precursor of the unelectrolyzed copper core is made. K5 is cut on the surface of the insulating lion and the resin is covered, = I - 八q ί ΐ 'impregnation fpH &lt;1 Catalyst solution [ACC 19E, ShiPley-Fareast (share) A ° to produce the core. The core is made into the electro-mineral core of electroless ore. Detach ί, ί, place the insulating substrate K1 at 5% of pH 14. Ultra-wave treatment in an aqueous solution of sodium hydroxide and impregnation for 10 minutes. Thereby, the resin film on the surface is smashed into a lion. The scales, the edge of the substrate, the magic material, the resin coating K2 Then, Weiyuan substrate, _, CM328C, electroless copper key treatment. (7) A call using electroless copper plating treatment, precipitation of thickness of 3~5μιη helmet to observe the electroless enamel plating of insulating materials K1 On the surface, the film K6 is formed correctly on the y_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Apply a ____ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The sample scale obtained is about G.G2g. The weight of the sample at this time Run then weigh i _. Then 'dip the sample taken in 20 ° 2 of hydrogen 2 〇 ml for 15 minutes. In addition, other samples are also impregnated; 孤 孤 acid 5 〇 / ° aqueous solution (pH1) 15 minutes in 10 ml. Then use a centrifugal separator to carry out centrifugation at 1 〇〇〇G for about 1 〇 minutes. The moisture attached to the LjK material is measured. n Measure the swelled sample after the separation ^ weight ' ί After swelling, it weighs 4 m (8). From the obtained swelling before weight 4 m (b) and after the month / j weight J m (8), according to "swelling degree sw = [m (a) _ m (b)] / m (b) x] (% The formula of ") is used to calculate the degree of swelling. In addition, other conditions are measured by the measurement method of nS]L1〇158.2 sexuality. At this time, the degree of swelling of the 5% aqueous solution of sodium hydroxide to pH 14 was 75 %. On the other hand, the degree of swelling of the aqueous solution of hydrochloric acid in a pH of 3% was 3%. According to the above steps, the circuit board κιο shown in Fig. 28 can be obtained. (Example 5.2) A styrene-butadiene copolymer (SBR) was used in addition to a carboxyl group-containing polymer [manufactured by Zee Co., Ltd., an acid equivalent of 500, a weight average molecular weight of 25,000, and a solid form component of 2% by weight]. The 酉 酉 _ κ κ κ κ κ κ κ κ κ κ κ κ κ κ κ κ κ κ κ κ κ κ κ κ κ κ κ κ κ At this time, the degree of swelling of the sodium hydroxide aqueous solution of ρΗ14 was 1% by mass. On the other hand, the degree of swelling of a 5% aqueous solution of hydrochloric acid at pH 1 was 3 % by weight. Thereby, the circuit board κίο shown in FIG. 28 can be obtained. According to the manufacturing method of the above embodiment, by peeling off the swellable resin film, the catalyst can be plated on the surface of the substrate on which the circuit is to be formed. Thereby, the electroless plating film can be accurately formed on the portion covered with the plating catalyst. Further, since the swellable resin film is easily peeled off by the swelling action, the film removing step is relatively easy to perform accurately. 190 201146113 (苐6 embodiment) ^1〇〇μΠ1 66), on one side of the first insulating layer L6, by the method of forming a thickness of 2 (), the width of 5 ϋ salt as a Α type _ _Bus Co., Ltd., "=) °, f amine (gamma of Japan Carbide Industries Co., Ltd. i), 2_ethyl-4-electric system as a hardening accelerator: "2 jobs") Spheres as inorganic fillers = = (5) "FB1SDx" manufactured by Chemicals Co., Ltd., average - Γ! (M〇mentive Prance Materials Japan * = A~187 made by A), methyl ethyl ketone as a solvent Sheets of thickness ιο〇μιη composed of (MEK) and N,N-diΙί composition

^:亥第-、,,色緣層L6的設有第一電氣電路L7的表面上,然後 ^亥樹脂組成物所構成之片材的外表面上載E rTm〇〇j } , 〇.4Pa ΙΟοίίί^ 1分鐘的加壓加麵形齡讀,躲175。(:下㈣9G分鐘的 加熱硬化二之後將PET薄膜剝離,以堆疊第二絶緣層u。 ,、在β亥第—絶緣層L1的表面上用苯乙烯—丁二烯共聚物(SBR) 形成厚度2μπι的樹脂覆膜L8。另外,樹脂覆膜L8的形成,係在 該環氧樹脂基材的主要表面上,塗佈苯乙烯―丁二烯共聚物(SBR) 的丁酮(MEK鴻浮液[日本Ze〇n股份有限公司製,酸當量_,粒 子徑200nm ’固體形態成分15%],在8(rc下經過3〇分鐘的乾燥 形成者。 、 μ ^然後,對設有樹脂覆膜L8的第二絶緣層L1,利用雷射加工形 成寬度20μηι、深度3〇μιη的約略長方形剖面的電路溝槽L4。另外, 雷射加工使用具備UV—YAG雷射的ESI公司製的MODEL5330。 如是形成之電路溝槽L4的内面的表面粗糙度Ra為〇·2μιη。 接著,將形成有溝槽的第二絶緣層L1的外表面浸潰於清潔調 和劑[界面活性劑溶液’ pH&lt;l : Rohm and Haas電子材料股份有限 公司製C/N3320]中,之後’用水清洗。然後,用過硫酸納—硫酸 191 201146113 系的ρΗ&lt;1的軟蝕刻劑進行軟蝕刻處理。然後,使用pD4〇4 (Shipley-Fareast股份有限公司製,pH&lt;1)進行預浸步驟。然後,浸 潰於包含氣化亞錫與氯化鈀的PH1的酸性Pd —Sn膠狀溶液 (CAT44 ’ Shipley-Fareast股份有限公司製)中,使成為無電解銅電鍍 核的鈀在錫一鈀膠狀的狀態下吸附於電路溝槽L4的内面以及樹脂 覆膜L8的表面上。接著,浸潰於PH&lt;1的催化劑藥液(ACC19E, Shipley-Fareast股份有限公司製),以產生鈀核。 接著’將第二絶緣層L1的外表面置於ρΗΜ的5%氫氧化納水 溶液中進行超音波處理並浸潰10分鐘。藉此,使表面的樹脂覆膜 L8艾到膨潤而徹底被剝離。此時,在第二絶緣層u的表 留樹脂覆膜L8的碎片等。 接著,將第一絶緣層L1浸潰於無電解電鐘液(Qy[328A、 CM328L、CM328C、Shipley-Fareast股份有限公司製)中,進行無 電解銅電鍍處理。利用無電解銅電鍍處理,析出厚度3〜5μιη的無 電解銅電鍍膜。用SEM(掃描型顯微鏡)觀察經過無電解銅電鍍處^ 的第一絶緣層L1 ’發現在電路溝槽L4的内面上正確地形成了無電 解電鍍膜L10。 接著,對電路溝槽L4的底部實施雷射加工,以形成從該電路 溝槽L4~的底部到第一電氣電路L7的表面的直徑5〇μηι的通孔L5。 接著利用去膠渣溶液(Swelling Dip Securiganth Ρ、Concentrate CompactCPAtotech 公司製),在膨潤 80°C、5 分,飯刻 80〇c、1〇 分的條件下進行去膠渣處理。 去膠、/查處理後的通孔L5的内面的表面粗糖度為i.4pm。 接著’將第二絶緣層L1浸潰於無電解電錢液(CM328A、 CM328L、CM328C、Shipley-Fareast股份有限公司製)中,進行無 電解銅電鍍處理。利用無電解銅電鍍處理,在通孔L5内以及電路 溝槽L4内堆積電鍍層,形成介層[3以及第二電氣電路L2。 时如是製得之電路基板的第二電氣電路L2的傳送損失用網路分 1器(Azient公司製8753E)測量。另外,對在該實施例1中利用去 膠/查處理使電路溝槽L4的内面粗彳造化所得到的電路基板也同樣測 192 201146113 量第二電氣電路L2的傳送損失。結果確認出傳送損失比在實施例 1中利用S驗處理使形成於第二絶緣層L1上的電路l 面粗糖化的電路基板更低。 (第7實施例) (實施例7-1) 使用厚度ΙΟΟμιη的環氧樹脂基材[松下電工(股)公司製的 R1766K乍^絶緣基材Ml。然後對該絶緣基材M1的表面利用雷射 加工形成寬度20μιη、深度30μηι的約略長方形剖面的溝槽M2[參 照圖44(a)]。另外,雷射加工使用具備uv—yag雷射 &amp; 製的 MODEL5330。 、然後、’將形成有該溝槽M2的絶緣基材mi,在清潔調和劑[界 面/舌性劑溶液’ pH&lt;l : R〇hm and Haas電子材料(股)公司製C/ N332p]中以38°C的條件浸潰5分鐘,進行清潔調和劑處理,之後, ,二0ί的熱水清洗1分鐘。接著,使用PD404陶ey-Fareast(股) = ’ ρΗ&lt;1] ’在38°C、1分鐘的條件下進行預浸步驟,並用水 =洗。然後,將包含氣化亞錫與氣化把的pH1的酸性pd—%膠狀 ^液[CAT44,Shipley-Fareast (股)公司製]在耽的條件下浸潰^分 ίί ’進行觸媒處理’使成為無電解銅電鍵核的把在錫-!巴膠狀的狀 =吸附於絶緣基材Ml上,並用水清洗。接著,在ρΗ&lt;丨的催化 ^樂液[ACCIQE ’ Shipley-Fareast(股)公司製]中用38〇c的條件浸潰 /刀鐘進行催化處理以產生鈀核作為電鍍觸媒M5[參照圖44(B)]。 之後,將該附著有電鍍觸媒M5的絶緣基材M1,在盔電解銅 ^液[CM328A、CM328L、CM328C、ShiPley_Fareast(股)公司钔 =於耽祕件下絲15分鐘,進行無電鍍處理 “与Ιμιη的無電解銅電鍍膜M6 [參照圖44(C)]。接著,在6〇。(:下 、'二過15为鐘的乾燥,並在18〇 ◦下加熱6〇分鐘,並使其退火。 接著,將上述形成有無電解銅電鍍膜M6的絶緣基材 巧清潔劑㈣贼、5分鐘的條件進行洗淨,並以贼才的敎^ 仃1分鐘的水洗。接著用硫酸系蝕刻處理液,在。 鐘的微働愤理,朗水清洗。絲在的0^ 193 201146113 處理’並用水清洗。^: Haidi-,,, the color edge layer L6 is provided on the surface of the first electrical circuit L7, and then the outer surface of the sheet composed of the resin composition is loaded with ErTm〇〇j } , 〇.4Pa ΙΟ ί , ^ 1 minute of compression plus face-length reading, hiding 175. (: Next (4) After 9 G minutes of heat hardening 2, the PET film is peeled off to stack the second insulating layer u., and the thickness of the styrene-butadiene copolymer (SBR) is formed on the surface of the βHil-insulating layer L1. 2 μm of the resin film L8. Further, the resin film L8 is formed on the main surface of the epoxy resin substrate, and the styrene-butadiene copolymer (SBR) is coated with methyl ethyl ketone (MEK Hongfu liquid) [Nippon ZeN Co., Ltd., acid equivalent _, particle diameter: 200 nm 'solid form component 15%], formed by drying at 8 (rc for 3 minutes), μ ^ then, with resin coating In the second insulating layer L1 of L8, a circuit groove L4 having a substantially rectangular cross section having a width of 20 μm and a depth of 3 μm is formed by laser processing, and a MODEL 5330 manufactured by ESI Corporation equipped with a UV-YAG laser is used for the laser processing. The surface roughness Ra of the inner surface of the formed circuit trench L4 is 〇·2 μηη. Next, the outer surface of the second insulating layer L1 in which the trench is formed is immersed in the cleaning conditioner [surfactant solution pH>l: C/N3320 manufactured by Rohm and Haas Electronic Materials Co., Ltd. Then, it was washed with water. Then, it was subjected to a soft etching treatment with a soft etchant of ρΗ&lt;1 of sodium persulfate 191 201146113. Then, pD4〇4 (pH1 &lt;1 manufactured by Shipley-Fareast Co., Ltd.) was used. The prepreg step was carried out, and then impregnated into an acidic Pd-Sn colloidal solution (manufactured by CAT44 'Shipley-Fareast Co., Ltd.) containing PH1 of vaporized stannous and palladium chloride to form an electroless copper plating core. The palladium is adsorbed on the inner surface of the circuit trench L4 and the surface of the resin film L8 in a tin-palladium gel state. Then, the catalyst solution (ACC19E, manufactured by Shipley-Fareast Co., Ltd.) is impregnated with PH &lt;1 ) to produce a palladium core. Next, 'the outer surface of the second insulating layer L1 is placed in a 5% aqueous solution of sodium hydroxide to be ultrasonically treated and impregnated for 10 minutes. Thereby, the resin film L8 on the surface is made. In the case of swelling, it is completely peeled off. At this time, fragments of the resin coating film L8 are left on the surface of the second insulating layer u. Next, the first insulating layer L1 is immersed in the electroless electric clock liquid (Qy [328A, CM328L, CM328C, manufactured by Shipley-Fareast Co., Ltd.) In the electroless copper plating treatment, an electroless copper plating film having a thickness of 3 to 5 μm is deposited by electroless copper plating treatment, and the first insulating layer L1 'passed by electroless copper plating is observed by SEM (scanning microscope) It was found that the electroless plated film L10 was correctly formed on the inner surface of the circuit trench L4. Next, the bottom of the circuit trench L4 was subjected to laser processing to form a bottom from the circuit trench L4~ to the first electrical circuit L7. The surface has a diameter of 5 〇 μηι through hole L5. Then, desmear treatment was carried out using a desmear solution (Swelling Dip Securiganth®, manufactured by Concentrate Compact CPAtotech Co., Ltd.) under the conditions of swelling at 80 ° C, 5 minutes, and a meal of 80 ° C and 1 minute. The surface roughness of the inner surface of the through hole L5 after the glue removal/inspection treatment was i.4 pm. Next, the second insulating layer L1 was immersed in an electroless liquid crystal liquid (CM328A, CM328L, CM328C, manufactured by Shipley-Fareast Co., Ltd.) to perform electroless copper plating treatment. The electroless copper plating treatment is performed to deposit a plating layer in the via hole L5 and in the circuit trench L4 to form a via [3 and a second electric circuit L2. The transmission loss of the second electric circuit L2 of the obtained circuit board was measured by a network divider (Azient Co., Ltd. 8753E). Further, in the circuit board obtained by roughening the inner surface of the circuit trench L4 by the stripping/checking process in the first embodiment, the transmission loss of the second electrical circuit L2 of 192 201146113 is also measured. As a result, it was confirmed that the transmission loss was lower than that of the circuit board in which the circuit 1 formed on the second insulating layer L1 was roughened by the S-test in the first embodiment. (Example 7) (Example 7-1) An epoxy resin substrate [R1766K® insulating substrate M1 manufactured by Matsushita Electric Industrial Co., Ltd.) having a thickness of ΙΟΟμηη was used. Then, the surface of the insulating base material M1 is subjected to laser processing to form a groove M2 having a substantially rectangular cross section having a width of 20 μm and a depth of 30 μm (refer to Fig. 44 (a)]. In addition, the laser processing uses MODEL5330 with uv-yag laser &amp; Then, 'the insulating substrate mi to be formed with the groove M2 is in the cleaning agent [interface/tongue solution 'pH&lt;l: R〇hm and Haas Electronic Materials Co., Ltd. C/N332p] The mixture was immersed for 5 minutes at 38 ° C for cleaning and conditioning treatment, and then washed with hot water for 2 minutes. Next, the pre-dip step was carried out at 38 ° C for 1 minute using PD 404 Taoey-Fareast (s) = ' ρ Η &lt;1] ', and washed with water = 1. Then, the acidic pd-% colloidal liquid [CAT44, manufactured by Shipley-Fareast Co., Ltd.] containing vaporized stannous and vaporized palladium was immersed in a crucible condition for catalyzed treatment. 'The gel which is made into an electroless copper bond nucleus in the form of a tin-! gel is adsorbed on the insulating substrate M1 and washed with water. Next, in a catalytic solution of ρΗ&lt;丨[ACCIQE 'Shipley-Fareast Co., Ltd.], a 38 〇c conditional impregnation/knife clock was used for catalytic treatment to produce a palladium core as a plating catalyst M5 [refer to the figure). 44(B)]. After that, the insulating substrate M1 to which the plating catalyst M5 is attached is subjected to electroless plating treatment in the helmet electrolysis copper liquid [CM328A, CM328L, CM328C, ShiPley_Fareast Co., Ltd.] Electroless copper plating film M6 with Ιμιη [refer to Fig. 44 (C)]. Next, at 6 〇. (:, 'two times over 15 minutes of drying, and heated at 18 〇 for 6 minutes, and Next, the insulating substrate (4) thief having the electroless copper plating film M6 formed thereon is washed for 5 minutes, and washed with a thief for 1 minute, followed by sulfuric acid etching. The treatment liquid, in the bell's slight anger, cleaned with water. Silk at 0^ 193 201146113 treatment 'and washed with water.

之後,在無電解電鍍液[CM328A、CM328L、QVBMCAfter that, in electroless plating solution [CM328A, CM328L, QVBMC

Shipley-Fareast(股)公司製]中,用7〇。〇的條件浸潰3〇〇分鐘 無電解銅電鍍處理’析出膜厚35μιη的無電解峨顯M8,、^ M2内部被該無電解電鑛層M8完全填埋[圖4 接 = 下經過15分鐘的乾燥。 接著,利用CMP法研磨絶緣紐M1的表面,除了溝样 内所填充之無電解銅電鍍膜M6以及無電解銅電鍍層M8之' =絶緣基材Ml的表面上所露出的無電解銅電鍍賴6以及. ,銅電鑛層M8除去[圖44(E)]。如是,便可利用由溝槽M2内戶斤 ^之無電解銅電鍍膜M6以及無電解銅電· M8所構 莫 體M3形成電路M4,製得電路基板。 ㈣盃屬導 形成電路M4的金屬導體M3係如上所述湘 ^ SIM(Scaning I〇n Microscope : 導體M3的結晶’發現如圖46如所示的,結晶粒塊平田微化 然後根據圖46的SIM雜,上财 ^ 均直徑長度為4μη。 d⑼、、aaa粒塊的千 (比較例7—1) 與實施例1同樣’在絶緣基材M1的表面 [參照圖48(A)],且用與實施例i相 槽M2 材Ml的表面上形成電鍍觸媒M5[參照圖:了:二 ^例1相同的條件進行處理,在絶緣基材M1 _面ί形C電^ 銅電鐘膜Μ6 [參照圖48(C)]。 卸上祕無電解 性生ΪΐΪίη絶r缘,材,1上形成無電解銅電鍍膜Μ6之後,用酸 生4GC、1讀力料下進行 行1分鐘的水洗。接著在25〇Γττ、#— ! 匕的熱水進 清洗。 C下進仃1为釦的酸洗處理,並用水 之後,對無電解銅電鍍職叫 並在電解銅電简上村I業社製「Evp 直= 條件下浸潰9G分鐘,進行電解铜 」於25C的 牛钔鍍處理,析出膜厚35μπι的電 194 201146113 =溝。槽M2内部以該電解銅電鑛層M7完全填埋[圖 ()]二接者’在60 C下進行15分鐘的乾燥。 内所研磨絶緣基材mi的表面,除了在溝槽M2 無電解銅電鑛膜_以及電解銅電錢層m7之外,_In the Shipley-Fareast company, 7 is used. The conditions of bismuth are immersed for 3 minutes without electroless copper plating treatment. The electroless sputum M8 with a film thickness of 35 μm is deposited, and the inside of M2 is completely filled by the electroless ore layer M8 [Fig. 4 Dry. Next, the surface of the insulating new M1 is polished by the CMP method, except for the electroless copper plating film M6 filled in the groove sample and the electroless copper plating layer exposed on the surface of the electroless copper plating layer M8. 6 and ., the copper ore layer M8 is removed [Fig. 44 (E)]. If so, the circuit board M4 can be formed by forming the circuit M4 from the electroless copper plating film M6 of the trench M2 and the electrodeless M3 of the electroless copper electric M8. (4) The metal conductor M3 of the cup-shaped conductor forming circuit M4 is as described above, and the SIMI of the conductor M3 is found as shown in FIG. 46, and the crystal grain block is flattened and then according to FIG. The length of the average diameter of the SIM is 4 μη. The d (9) and the aaa pellets are thousands (Comparative Example 7-1), which is the same as in the first embodiment, on the surface of the insulating substrate M1 [see Fig. 48(A)], and The plating catalyst M5 is formed on the surface of the phase M2 material M1 of the embodiment i. [Refer to the figure: the same conditions as in the case of Example 1, the insulating substrate M1_face is formed by the C electric copper film. Μ6 [Refer to Fig. 48(C)]. Unloading the non-electrolytic ΪΐΪ ΪΐΪ η r , ,, material, 1 formed an electroless copper plating film Μ6, and then using acid 4GC, 1 reading force for 1 minute Washed in water. Then in the hot water of 25〇Γττ, #—! 进, C is washed into the 仃1 for the pickling treatment, and after water, the electroless copper plating is called and the electrolysis copper is on the village I industry. Co., Ltd. "Evp straight = 9G minutes under conditions, electrolyzed copper" was plated at 25C, and the film thickness was 35μπι. 194 201146113 = groove. The inside of M2 is completely filled with the electrolytic copper electric ore layer M7 [Fig. 2] The second connector is dried at 60 C for 15 minutes. The surface of the insulating substrate mi is ground, except for the electroless copper in the trench M2. Electric film _ and electrolytic copper money layer m7, _

供μ trU的表面上所露出之無電解銅電顧·以及電解銅電 =M7除去[圖48(E)]。像這樣,利用由溝槽M ====銅侧Μ7所構成的金細_ 成,屬 粒,大’且不平均。然後根據圖47的SIM影像,肚述方法: 測量到的結晶粒塊的平均直徑長度為12μιη。 【圖式簡單說明】 圖ι(α)〜(ε)係用來說明第丨―丨實施態樣之電 法的各步驟的示意剖面圖。 圖2(A)〜(B)係在第1 —丨實施態樣中’該電路溝槽形成步 後與該電鍍處理步驟之後的絶緣基材]^的狀態的説明圖。 圖3係用來說明使樹脂覆膜含有螢光性物質並利用螢光性 質的發光來檢查覆膜除去瑕疲的檢査步驟的説明圖。 圖4(A)〜(E)係用來說明製造第i—2實施態樣之立體 的各步驟的不意剖面圖。 圖5(A)〜(E)係用來說明利用習知的全加成法形成金 各步驟的示意剖面圖。 甸α跟的 圖6係用來說明係用習知的全加成法所形成之電路 狀的示意剖面圖。 卻开 ν 圖7(A)〜(Ε)係用來説明製造第2 — 1實施態樣之電路基板 步驟的示意剖面圖。 合 圖8(A)〜(Β)係在第2—1實施態樣中,該電路溝槽形成步驟 後與該電鍍處理步驟中的絶緣基材Α1的狀態的説明圖。 — 195 201146113 圖9(A)〜(B)係在使用未含有填料的絶緣基材A21的情況下 絶緣基材A21的狀態的説明圖。 、 圖10(A)〜(E)係用來説明製造第2—2實施態樣之立體電路A 的各步驟的示意剖面圖。 土 圖11(A)〜(E)係用來説明利用習知的全加成法形成金屬配線 各步驟的不意剖面圖。. &quot; 圖12係用來説明利用習知的全加成法所形成之電路 狀的示意剖面圖。 明 y 圖13係用來表示本發明的實施態樣之多層電路基板的電氣電 路的構造以及層間連接用孔的配置等的部分俯視圖。 圖14係沿著圖π的I一I線的端視圖,表示第3 —丨實施態樣 之多層電路基板的製造方法的(A)電路基板準備步驟、(B)第丨^緣 層形成步驟、(C)開孔形成步驟、(D)金屬柱形成步驟、(£;)第2絶緣 層形成步驟以及皮膜形成步驟、(F)電路圖案形成步驟、(G)觸媒披 覆步驟、(H)皮膜除去步驟以及(I)電鍍步驟。 、 圖15係沿著圖13的I—I線的端視圖,表示第3_2實施態樣 之多層電路基板的製造方法的(A)電路基板準備步驟、(B)第i ^緣 層形成步驟、(c)開孔形成步驟、(D)金屬柱形成步驟、洱)第2絶緣 層形成步驟以及皮臈形成步驟、(F)電路圖案形成步驟、(G)觸媒披 覆步驟、(H)皮膜除去步驟以及①電鍍步驟。 、 圖16係沿著圖13的I—I線的端視圖,表示第3_3實施態樣 之多層電路基板的製造方法的(A)電路基板準備步驟、(B)第丨^緣 層形成步驟、(C)帆形成步驟、(D)金屬柱形成步驟、⑹第2絶緣 層形成步驟以及皮卿成步驟、⑺電路騎形成步驟、(G)觸媒披 覆步驟、(H)皮膜除去步驟以及(I)電錢步驟。 圖17(A)〜(E)侧來酬細加成法形成電路基板的電路的步 驟圖。 圖18(A)〜(G)係用來説明利用增層法製造多層電路基板時在應 用加成法的情況下的問題的步驟圖。 圖19係用來表示本發_實施態樣之多層電路基板的電氣電 196 201146113 路的構造以及層間連接用孔的配置等的部分俯視圖。 ' 圖20係沿著圖19的[―1線的端視圖,表示第4 — 1實施態樣 '之多層電硌基板的製造方法的(A)電路基板準備步驟、(B)絶緣^形 成步驟、(C)開孔形成步驟、(D)金屬柱形成步驟、(£)皮膜形成步驟、 (F)電路圖案形成步驟、(G)觸媒披覆步驟、⑻皮膜除去步驟以及① 電鍍步驟。 ' ” 圖21係沿著圖19的1一1線的端視圖,表示第4—2實施態樣 之多層電路基板的製造方法的(A)電路基板準備步驟、(B)絶緣層 形成步驟、(C)開孔形成步驟、(D)金屬柱形成步驟、⑹皮膜形成步 驟、(F)電路圖案形成步驟、(G)觸媒披覆步驟、(η)皮膜除去步驟以 及(I)電鍍步驟。 ' 圖22係沿著圖19的I一I線的端視圖,表示第4一3實施態樣 之多層電路基板的製造方法的(A)電路基板準備步驟、(b)絶緣層形 成步驟、(C)開孔形成步驟、(D)金屬柱形成步驟、⑹皮膜形成步驟、 (F)電路圖案形成步驟、(G)觸媒彼覆步驟、(H)皮膜除去步驟以及(I) 電鍍步驟。 圖23(A)〜(E)係用來説明利用加成法形成電路基板的電路的步 驟圖。 圖24(A)〜(G)係用來説明利用增層法製造多層電路基板時在應 用加成法的情況下的問題的步驟圖。 圖25係沿著圖19的I一I線的端視圖,表示第4一4實施態樣 之多層電路基板的製造方法的(A)電路基板準備步驟、(B)絶緣層形 成步驟、(C)開孔形成步驟、(D)金屬柱形成步驟、(E)皮膜形成步驟、 (F)電路圖案形成步驟、(G)觸媒坡覆步驟、(H)皮膜除去步驟以及(I) 電鍍步驟。 圖26係為了説明第4—4實施態樣的特徵而用圖25的符號X 所包圍的部分的放大圖。 圖27係為了更詳細説明第4—1實施態樣的圖20的(C)開孔形 ' 成步驟、(E)皮膜形成步驟、(G)觸媒彼覆步驟的放大圖。 . 圖28係表示本發明的電路基板的實施態樣的一個實施例的剖 197 201146113 面圖。 圖29 (A)〜(E)係用來説明本發日月的電路基 步驟的示意剖面圖。 刀凌的各 圖30係用來説明使樹脂覆膜含有登光性物質並利用榮光性 質的發光來檢查覆膜除去不良情況的檢査步驟的説明圖。 圖31(A)以及⑼係表示在電路職形成步 ^過樹脂覆膜的厚度以形成電路圖案部(電路溝槽)時^成== 解電鑛膜的示意剖面圖。 ^ 板説明製造本發明的電路基板(立體電路基 個實係表示侧知方法製造咖 用知電路基板的一個實施例的剖面圖,(Α)係表示 之制狀態,⑻、(〇絲示研舰的狀態。 面圖j系示本發明的貫施態樣的一個實施例的電路基板的剖 剖面^。36 (A)乃至(E)係表示同上電路基板的第一製造法的步驟的 驟的第—製造法的_ 36所示之步 剖面^。38⑷乃至(E)係表示同上電路基板的第二製造法的步驟的 驟的係表示同上第二製造法的娜38所示之步 剖面^。40 (A)乃至(〇)係表示同上電路基板的第三製造法的步驟的 驟的係表示同上第三製造法的接續圖40所示之步 例的=&amp;⑷乃至(F)係表示習知電路基板的製造步驟的一個實施 198 201146113 圖43係表示習知電路基板的一個實施例的剖面圖。 、圖44係表示本發明的實施態樣的—個實施例,(A)乃至(e)係製 造過程之各步驟的概略剖面圖。 圖45係表示本發明的實施態樣的另—實施例,(A)乃至⑹係 表不製造過程的各步驟的概略剖面圖。 圖46係實施例丨的導體金屬的SIM影像的照片,(八)係1〇〇〇〇 倍的SIM照片,(B)係3000倍的SIM照片。 圖47係比較例1的導體金屬的SIM影像的照片,係1〇〇⑽ 倍的SIM照片,(B)係3000倍的SIM照片。 圖48係表示習知例的圖式,(A)乃至出)係製造過程的各 概略剖面圖。 【主要元件符號說明】 A、X符號The electroless copper battery exposed on the surface of the μ trU and the electrolytic copper = M7 are removed [Fig. 48(E)]. In this way, the gold constituting by the groove M ====the copper side Μ7 is used, and the granules are large and uneven. Then, according to the SIM image of Fig. 47, the method of the present invention: The measured crystal granules have an average diameter length of 12 μm. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1(a) to (ε) are schematic cross-sectional views for explaining respective steps of an electric method of a second embodiment. Figs. 2(A) to 2(B) are explanatory views showing the state of the insulating substrate after the step of forming the circuit trench and the step of the plating process in the first embodiment. Fig. 3 is an explanatory view for explaining an inspection procedure for inspecting a film to remove fatigue by using a fluorescent material to emit a fluorescent substance. 4(A) to (E) are cross-sectional views for explaining the steps of manufacturing the three-dimensional embodiment of the first embodiment. Fig. 5 (A) to (E) are schematic cross-sectional views for explaining respective steps of forming gold by a conventional full addition method. Figure 6 is a schematic cross-sectional view showing the circuit shape formed by the conventional full additive method. However, FIG. 7(A) to (Ε) are schematic cross-sectional views for explaining the steps of manufacturing the circuit substrate of the second embodiment. Figs. 8(A) to 8(B) are explanatory views showing the state of the insulating substrate Α1 in the step of forming the circuit trench and the step of forming the plating process in the second embodiment. — 195 201146113 FIGS. 9(A) to 9(B) are explanatory views showing a state of the insulating base material A21 when an insulating base material A21 not containing a filler is used. 10(A) to (E) are schematic cross-sectional views for explaining respective steps of manufacturing the three-dimensional circuit A of the second embodiment. Soil Fig. 11 (A) to (E) are schematic cross-sectional views for explaining the steps of forming a metal wiring by a conventional full additive method. &lt;&gt; Fig. 12 is a schematic cross-sectional view for explaining a circuit shape formed by a conventional full additive method. Fig. 13 is a partial plan view showing the structure of an electric circuit and the arrangement of interlayer connection holes of the multilayer circuit board according to the embodiment of the present invention. 14 is an end view taken along the line I-I of FIG. π, showing a circuit board preparation step of the manufacturing method of the multilayer circuit substrate of the third embodiment, and (B) a step of forming the edge layer. (C) opening forming step, (D) metal pillar forming step, (£;) second insulating layer forming step and film forming step, (F) circuit pattern forming step, (G) catalyst coating step, ( H) a film removal step and (I) a plating step. 15 is an end view taken along line I-I of FIG. 13 and shows a (A) circuit board preparation step and (B) an i-th edge layer forming step of the method for manufacturing a multilayer circuit substrate according to the third embodiment. (c) opening forming step, (D) metal pillar forming step, 第) second insulating layer forming step and skin forming step, (F) circuit pattern forming step, (G) catalyst coating step, (H) Film removal step and 1 plating step. 16 is an end view taken along line I-I of FIG. 13 and shows a (A) circuit board preparation step, and (B) a second layer formation step of the method for manufacturing a multilayer circuit substrate according to the third embodiment. (C) a sail forming step, (D) a metal pillar forming step, (6) a second insulating layer forming step and a skin forming step, (7) a circuit riding forming step, (G) a catalyst coating step, (H) a film removing step, and (I) Steps for money. Fig. 17 (A) to (E) are diagrams showing a circuit for forming a circuit board by a fine addition method. 18(A) to 18(G) are diagrams for explaining a problem in the case of applying the additive method when manufacturing a multilayer circuit board by the build-up method. Fig. 19 is a partial plan view showing the structure of the electric circuit 196 201146113 and the arrangement of the interlayer connection holes, etc., of the multilayer circuit board of the present invention. Fig. 20 is a (A) circuit board preparation step, and (B) insulation forming step of the method for manufacturing a multilayer electric circuit substrate according to the [1] line end view of Fig. 19, showing the fourth embodiment. (C) opening forming step, (D) metal pillar forming step, (£) film forming step, (F) circuit pattern forming step, (G) catalyst coating step, (8) film removing step, and 1 plating step. FIG. 21 is an end view taken along line 1-1 of FIG. 19, showing (A) a circuit board preparation step, (B) an insulating layer forming step, and a manufacturing method of the multilayer circuit substrate of the fourth embodiment. (C) opening forming step, (D) metal pillar forming step, (6) film forming step, (F) circuit pattern forming step, (G) catalyst coating step, (η) film removing step, and (I) plating step Fig. 22 is an end view taken along line I-I of Fig. 19, showing (A) circuit board preparation step, (b) insulating layer forming step, and (b) manufacturing method of the multilayer circuit substrate of the fourth embodiment. (C) opening formation step, (D) metal pillar formation step, (6) film formation step, (F) circuit pattern formation step, (G) catalyst separation step, (H) film removal step, and (I) plating step 23(A) to (E) are diagrams for explaining a circuit for forming a circuit board by an additive method. Figs. 24(A) to (G) are diagrams for explaining the case of manufacturing a multilayer circuit board by a build-up method. Fig. 25 is an end view taken along the line I-I of Fig. 19, showing the fourth embodiment. (A) circuit board preparation step, (B) insulating layer forming step, (C) opening forming step, (D) metal pillar forming step, (E) film forming step, (F) Circuit pattern forming step, (G) catalyst slope step, (H) film removal step, and (I) plating step. Fig. 26 is surrounded by the symbol X of Fig. 25 for explaining the features of the fourth to fourth embodiments. Figure 27 is a (C) open-cell forming step, (E) film forming step, and (G) catalyst-coated step of Figure 20 for explaining the fourth embodiment in more detail. Fig. 28 is a cross-sectional view showing a section 197 201146113 of an embodiment of the circuit board of the present invention. Fig. 29 (A) to (E) are diagrams for explaining the circuit-based steps of the present day and month. Fig. 31 (A) and (9) are explanatory diagrams for explaining the inspection procedure for inspecting the removal of the coating film by using the luminescence property of the resin coating film. It is shown that the thickness of the resin film is formed in the circuit to form a circuit pattern portion (circuit trench Fig. 2 is a schematic cross-sectional view showing an embodiment of the circuit board of the present invention. Α) indicates the state of the system, (8), (the state of the stencil display. Fig. j is a cross-sectional view of the circuit substrate of one embodiment of the present invention. 36 (A) or even (E The step of the first manufacturing method of the same circuit board as the step of the first manufacturing method of the same circuit board is shown in Fig. 36. (4) or (E) shows the step of the second manufacturing method of the same circuit board. It is a step profile ^ shown by Na 38 of the second manufacturing method. 40(A) or even (〇) indicates that the step of the third manufacturing method of the same circuit board is the same as that of the step of the third manufacturing method shown in Fig. 40, which is represented by =&amp;(4) or (F) One implementation of the manufacturing steps of a conventional circuit substrate 198 201146113 FIG. 43 is a cross-sectional view showing an embodiment of a conventional circuit substrate. Fig. 44 is a schematic cross-sectional view showing the steps of the manufacturing process of the embodiment of the present invention, and (A) to (e). Fig. 45 is a view showing another embodiment of the embodiment of the present invention, and (A) to (6) are schematic cross-sectional views showing respective steps of the manufacturing process. Fig. 46 is a photograph of a SIM image of a conductor metal of Example ,, (8) a SIM image of 1 倍, and (B) a SIM photo of 3000 times. Fig. 47 is a photograph of a SIM image of the conductor metal of Comparative Example 1, which is a SIM photograph of 1〇〇(10) times, and (B) is a SIM photograph of 3000 times. Fig. 48 is a schematic cross-sectional view showing a manufacturing process of the conventional example, and (A) and (b). [Main component symbol description] A, X symbol

Al、A21、A100、a、D卜 D2卜 D100、Kl、Ml 絶緣基材 A2、A22、D2、D22、K2、L8 樹脂覆膜 土 A3、A23、D3、D23、L4、K3 電路溝槽 A4、D4、K4貫通孔 A5觸媒金屬 A6電鍍層(電氣電路) A10、A60、D10、D60、F10、G10、K10、g、X 電路基板 An、Dn、Kii 填料 A5卜D51立體絶緣基材 A101、D101 穿通孔 A102、D102、F26、G25、M5、e、η 電鍵觸媒 Α103、D103 光阻層 Α104、D104、F25、G24、k 電路圖案 A105、D105 金屬配線 A106、D106電鍍部分 A110、D110 光罩 199 201146113 A23a未形成電鍍層的部分 A7、A25 電鍍層 A25a電鍍層剝離的部分 D深度 D2a ' K2a 殘潰 D5電鍍觸媒或其前驅物 D6無電解電鍍膜(電氣電路) D8電氣電路 F1、G1多層電路基板Al, A21, A100, a, D Bu D2 Bu D100, Kl, Ml Insulation substrate A2, A22, D2, D22, K2, L8 Resin coated soil A3, A23, D3, D23, L4, K3 Circuit trench A4 , D4, K4 through hole A5 catalyst metal A6 plating layer (electrical circuit) A10, A60, D10, D60, F10, G10, K10, g, X circuit substrate An, Dn, Kii filler A5 Bu D51 three-dimensional insulating substrate A101 , D101 through hole A102, D102, F26, G25, M5, e, η bond Α103, D103 photoresist layer 、104, D104, F25, G24, k circuit pattern A105, D105 metal wiring A106, D106 plating part A110, D110 Photomask 199 201146113 A23a Part A7, A25 without plating layer Plating layer A25a Plating layer peeling portion D depth D2a ' K2a Residual D5 plating catalyst or its precursor D6 electroless plating film (electrical circuit) D8 electric circuit F1 , G1 multilayer circuit substrate

Fll、h第1電氣電路 F20第1絶緣層 F2卜m層間連接用孔 F22、G22、q金屬柱 F23第2絶緣層 F24、G23、b、j樹脂皮膜 F27第2電氣電路 F27a、G26a 配線 F27b、G26b電極用墊部 F30絶緣層(絶緣層全體) G11第1電氣電路 G20、i絶緣層 G20a絶緣層未除去的部分 G21層間連接用孔 G26 第2電氣電路 K5 電鍍觸媒或其前驅物 無電解電鍍膜 K6、K6a〜K6h、L10、M6、f K8 電路配線 Κ12表面樹脂層 Κ13電路層 Κ21電解電鍍膜 200 201146113 K22研磨器 K51 立體絶緣基材 K60立體電路基板 L1 絶緣層(第二絶緣層) L2電氣電路(第二電氣電路) L3介層 L5 通孔 L6第一絶緣層 L7第一電氣電路 L9電鍍觸媒或其前驅物 L11膠渣 M2電路形成用溝槽 M3金屬導體 M4 電路 M7電解電鍍層 M8無電解電鍍層 T厚度(或高度) W寬度 1-1、彳-彳’ 剖面線 c溝槽 d穿通孔 dl、d2 距離 p第2電路 201F11, h first electric circuit F20 first insulating layer F2 m inter-layer connection hole F22, G22, q metal post F23 second insulating layer F24, G23, b, j resin film F27 second electric circuit F27a, G26a wiring F27b G26b electrode pad portion F30 insulating layer (whole insulating layer) G11 first electric circuit G20, i insulating layer G20a, part of the insulating layer not removed G21 interlayer connection hole G26 second electric circuit K5 electroplating catalyst or its precursor Electrolytic plating film K6, K6a to K6h, L10, M6, f K8 Circuit wiring Κ 12 surface resin layer Κ 13 circuit layer Κ 21 electrolytic plating film 200 201146113 K22 grinder K51 three-dimensional insulating substrate K60 three-dimensional circuit substrate L1 insulating layer (second insulating layer L2 electrical circuit (second electrical circuit) L3 via L5 via L6 first insulating layer L7 first electrical circuit L9 plating catalyst or its precursor L11 slag M2 circuit forming trench M3 metal conductor M4 circuit M7 electrolysis Electroplated layer M8 electroless plating layer T thickness (or height) W width 1-1, 彳-彳' section line c groove d through hole dl, d2 distance p second circuit 201

Claims (1)

201146113 七、申請專利範圍: 卜一種電路基板,包含: 絶緣基材,其係在表面上形成樹脂覆膜,以該樹脂覆膜的外 表面為基準形成具備超過該樹脂覆膜厚度之深度的凹部,藉此形 成具備所期望之形狀以及深度的電路溝槽,並在該電路溝槽的表 面上以及該樹脂覆膜的表面上披覆電鍍觸媒或其前驅物,然後將 該樹脂覆膜剝離所形成者;以及 無電解電錢膜,其係對該絶緣基材實施無電解電鍍,藉此在 s玄電路溝槽上所形成者; 該無電解電鍍膜的厚度相對於該電路溝槽的深度在〇 5以下。 2、 如申請專利範圍第1項之電路基板,其中, 該無電解電鍍膜的厚度相對於該電路溝槽的深度在〇25以 上。 3、 如申請專利範圍第丨項之電路基板,其中, 亥無電解電鑛膜的厚度為〇.1〜ΙΟμη。 4、 如申請專利範圍第丨〜3項中任丨項之電路基板,其中, 3亥電路溝槽的深度為1〜5μιη。 5、 一種電路基板的製造方法,包含: 覆膜形成步驟,其在絶緣基材表面上形成樹脂覆膜; 電路溝槽形成步驟,其以該樹脂覆朗外表面減進偏且201146113 VII. Patent application scope: A circuit substrate comprising: an insulating substrate formed with a resin film on a surface thereof, and a concave portion having a depth exceeding a thickness of the resin film is formed on the basis of an outer surface of the resin film Thereby forming a circuit trench having a desired shape and depth, and coating a plating catalyst or a precursor thereof on the surface of the circuit trench and the surface of the resin film, and then peeling the resin film And an electroless magnetic film, which is electrolessly plated to the insulating substrate, thereby forming on the trench of the sinus circuit; the thickness of the electroless plating film is relative to the trench of the circuit The depth is below 〇5. 2. The circuit substrate of claim 1, wherein the thickness of the electroless plated film is greater than or equal to the depth of the circuit trench. 3. The circuit substrate according to the scope of the patent application, wherein the thickness of the electroless ore film is 〇.1~ΙΟμη. 4. The circuit substrate of any one of the above-mentioned patents, wherein the depth of the trench of the 3H circuit is 1 to 5 μm. A method of manufacturing a circuit board, comprising: a film forming step of forming a resin film on a surface of the insulating substrate; and a circuit trench forming step of reducing the surface of the resin by the outer surface of the resin 取w工趿復,1:緵觸媒或其前驅物; 覆膜除去步驟’其從該絶縫其奸腺姑接丨此®—“,Take the 趿 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , 如申請專利範圍第5項之電路基板的製造方法, ’其中, 202 201146113 路溝槽的里的的厚度相對於該電 7、 如該第5項之^基板㈣造方^^財, 以既ΐ、夜體:‘二係以既定液體使該樹脂覆膜膨潤之後,戋 覆膜的-部分溶解之後,從該絶緣基Li 8、 如申^專種_ 7項之f路基板的製造方法, 細脂覆膜對該液體的膨潤度在5〇%以上。/、 9、 如申,專利範圍第7項之電路基板的製造方法,盆中, 步驟媒賴步驟包含在雜觸媒金屬膠狀溶液中進行處理的 在該覆膜除去步驟中的既定液體為驗性溶液, 該樹脂覆輯該酸性觸媒金屬膠狀 對該驗性驗_彡職在篇以±。 瓜禾違50/。 10、 如申請專利範圍第5項之電路基板的製造方法,其中, 該覆膜除去步驟係以既定液體將該樹脂覆膜溶/解除去的步 11專利範圍第5項之電路基板的製造方法,其中, 4忒秘爿曰復膜,係在該絶緣基材表面上塗佈彈性體的懸浮液或 乳狀液之後,經過乾燥所形成的樹脂覆膜。 12、 如申請專利範圍第5項之電路基板的製造方法,其中, 該樹脂覆膜,係將形成在支持基板上的樹脂覆膜/轉印到該 緣基材表面上所形成的樹脂覆膜。 13、 如申請專利範圍第11項之電路基板的製造方法,其中, S亥彈性體,係從由具有羧基的二烯系彈性體、丙烯酸系彈性 體以及聚酯系彈性體所構成的群組中選出者。 14、 如申請專利範圍第13項之電路基板的製造方法,其中, 該二烯系彈性體為苯乙烯一丁二烯系共聚物。 15、 如申請專利範圍第5項之電路基板的製造方法,其中, 該樹脂覆膜以由酸當量1〇〇〜800的具有羧基的丙烯酸系樹脂 203 201146113 所構成的樹脂為主成分。 16、,申請專利範圍第5項之電路基板的製造方法,其中, ,該樹脂覆臈係由將⑻在分子中至少具有i個聚合性不飽和基 的,酸或酸酐的至少〗種以上的單體以及(b)可與該(a)單體聚合的 至少1種以上的單體聚合所得到的聚合物樹脂或包含該聚合物樹 脂的樹脂組成物所構成。 Π、如申請專利範圍第16項之電路基板的製造方法,其中, 該聚合物樹脂的酸當量為100〜800。 八 18、如申請專利範圍第5項之電路基板的製造方法,1中, 該樹脂覆膜的厚度在10μιη以下。 八 19如申明專利範圍第5項之電路基板的製造方法,其中, 該電路溝槽具有寬度在20μπι以下的部分。'、 20、如申請專利範圍第5項之電路基板的製造方法,並中, fi if1形成步驟係利用雷射加工形成電路溝^的步驟。 、如申$專利範圍第5項之電路基板的製造方法,盆中, 27 ΐΪΪΐ槽形成步驟係利用壓型法形成電路溝槽^步驟。 、^申明專利範圍第5項之電路基板的製造方法,1中, 上形ίΐίί溝槽形成步驟中,於形成電路溝槽時找絶緣基材 23範圍第5項之電路基板的製造方法,其中’ 為該ϊίΪΪ有形成高低差狀的高低差面,該絶緣基材表面 24、ΐΓί 第5項之電路基板的製造方法,其中, 覆臈驟利,光性物質,並在該 疲。 發光触ihi:膜除去瑕 八、圖式: 204For example, in the method of manufacturing the circuit board of the fifth aspect of the patent application, 'the thickness of the groove in the groove of the 2011 201146113 is relative to the electricity 7, and the substrate (4) of the fifth item is ΐ,夜体: 'The second system is a method of manufacturing the f-substrate of the insulating film after the partial coating of the resin film after the resin film is swollen with a predetermined liquid, after the partial coating of the insulating film Li 8 The fineness of the liquid film on the liquid is 5% by weight or more. The method for manufacturing a circuit board according to the seventh aspect of the invention, wherein the predetermined liquid in the step of removing the coating is carried out in the step of disposing the catalyst in the metal catalyst solution of the catalyst An experimental solution, the resin is coated with the acid catalyst metal gel to test the test _ 彡 在 in the article to ±. Gua Wo violates 50/. 10. The method of manufacturing a circuit board according to the fifth aspect of the invention, wherein the film removing step is a method of manufacturing a circuit board according to the fifth aspect of the patent of the fourth aspect of the invention, wherein the resin film is dissolved/dissolved by a predetermined liquid. Wherein, the secret film is a resin coating formed by drying a suspension or emulsion of an elastomer on the surface of the insulating substrate and then drying. 12. The method of manufacturing a circuit board according to the fifth aspect of the invention, wherein the resin film is a resin film formed on a support substrate or a resin film formed on a surface of the edge substrate . The method of manufacturing a circuit board according to claim 11, wherein the S-elastomer is a group consisting of a diene-based elastomer having a carboxyl group, an acrylic elastomer, and a polyester-based elastomer. Selected in the middle. 14. The method of producing a circuit board according to claim 13, wherein the diene elastomer is a styrene-butadiene copolymer. The method of producing a circuit board according to the fifth aspect of the invention, wherein the resin film comprises a resin comprising a carboxyl group-containing acrylic resin 203 201146113 having an acid equivalent of from 1 〇〇 to 800. The method for producing a circuit board according to claim 5, wherein the resin coating is at least one of an acid or an acid anhydride having at least one polymerizable unsaturated group in the molecule (8). The monomer and (b) are a polymer resin obtained by polymerizing at least one monomer which is polymerized with the monomer (a) or a resin composition containing the polymer resin. The method for producing a circuit board according to claim 16, wherein the polymer resin has an acid equivalent of from 100 to 800. 8. The method of manufacturing a circuit board according to claim 5, wherein the resin film has a thickness of 10 μm or less. The method of manufacturing a circuit board according to the fifth aspect of the invention, wherein the circuit trench has a portion having a width of 20 μm or less. '20. The method of manufacturing a circuit board according to claim 5, wherein the fi if1 forming step is a step of forming a circuit trench by laser processing. In the method of manufacturing the circuit board of the fifth aspect of the patent, in the basin, the 27-groove forming step is a step of forming a circuit trench by a press method. And a method of manufacturing a circuit board according to the fifth aspect of the invention, wherein the method of manufacturing the circuit substrate of the fifth aspect of the insulating substrate 23 is formed in the step of forming the circuit trench in the upper forming step, wherein In the method of manufacturing the circuit board of the fifth aspect of the present invention, the method of manufacturing the circuit board of the fifth aspect of the present invention is a method for manufacturing a circuit board of the fifth aspect, in which the coating material is exposed and the material is weak. Illumination touch ihi: membrane removal 瑕 Eight, schema: 204
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