TW201145638A - Apparatus of manufacturing organic semiconductors - Google Patents

Apparatus of manufacturing organic semiconductors Download PDF

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Publication number
TW201145638A
TW201145638A TW099119652A TW99119652A TW201145638A TW 201145638 A TW201145638 A TW 201145638A TW 099119652 A TW099119652 A TW 099119652A TW 99119652 A TW99119652 A TW 99119652A TW 201145638 A TW201145638 A TW 201145638A
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unit
semiconductor manufacturing
organic semiconductor
deposition material
deposited
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TW099119652A
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Chinese (zh)
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TWI431831B (en
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Chang-Ho Kang
Hyun-Goo Kwon
Ho-Joong Choi
Jung-Jin Kim
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Snu Precision Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52Means for observation of the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/542Controlling the film thickness or evaporation rate
    • C23C14/544Controlling the film thickness or evaporation rate using measurement in the gas phase
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

An organic semiconductor manufacturing apparatus is provided which minimizes the distance between a transparent substrate and a dispensing unit to prevent a deposition material from being deposited on any adjacent sensor. The organic semiconductor manufacturing apparatus includes an exposed part formed in at least one part of a transfer unit to externally discharge a part of the deposition material transferred through the transfer unit, and a sensing unit disposed adjacent to the exposed part to measure an amount of the deposition material discharged through the exposed part. Accordingly, the organic semiconductor manufacturing apparatus can accurately measure the amount of a deposition material transferred from the transfer unit, while preventing the deposition material dispensed from the dispending unit from being deposited on the sensing unit. Therefore, reliability in measuring the thickness of deposition material deposited on transparent substrates may be improved.

Description

201145638 六、發明說明: 【發明所屬之技術領域】 本發明是有關於製造有機半導體的裝置,更特別地是關於 將有機材料塗佈在基板上的有機半導體製造裝置。 【先前技術】 一般來έ尤,有機發光二極體(〇LED)面板和現在的液晶顯 示器(LCD)面板來比較,具有低電壓驅動、超薄的形體、廣視 角與,反應速度等等的優點。有機發光二極體面板藉由施加預 定電壓在分別形成在下板和上板上的透明金屬電極,讓電流通 過嵌在下板和上板間的有機發光材料來發光,其中,下板為一 透明玻璃基板具有氧化銦錫(ITO)透明電極圖案形成於其上以 作為正電極’且上板為一基板具有金屬電極形成於於其^以作 為負電極。 有機半導體裝置是絲製造這類的有機發光二極體 (OLED)面板。為了製造具有上述結構的有機發光二極體 (OLED)面板’需要實行包括蝕刻、沉積和表面改質等製程在 透明基板上。沉積-沉積材料在透縣板上的其中之—法是 使用-塗佈裝置均勻的塗佈—沉積材料在—透明基板上。在= 侧件㈣树·板上咖糖叙厚奴·個別感 測益(separatesensor)來量測。該感測器藉由量測由徐部 爾峨。伽通常 ΐίίίΓ 之間。塗佈裝置與透明基板以一固 積。因此,當沉積材料從塗佈裝置塗佈時,部份 4 201145638 不可避免地遺漏而不沉積在透明基板上。 此外,一般而言,有機半導體製造裝置包括複數個塗佈單 元(dispensingunit)在配置的每—佩邮巾。糊來說,有機 半導體製造裝置可包括第—和第二塗佈單元,第—感測器係配 置在第-塗佈單元中且第二感測器係配置在第二塗佈單元 :。在這個例子中’從第—塗佈單元塗佈的部份沉積材料可能 ,積在第—感心上,以致於第二感測器無法準確地量測從第 塗佈單元塗佈的沉猜料量。因,_在透喊板上的沉積 材料厚度的量測可靠性將會下降。 【發明内容】 置’可縮短透明基板和 本發明所描述的有機半導體製造褒 塗佈裝置之間的距離。 材料沉積二==感導體製造裝置’可避免沉積 、:rw/ ^ 提供一有機料體製造裝置,包括儲存 =積在-基板上的-沉赌料的—儲存單元、汽化儲存單元十 逆單1及^^接^=元且另—端連接至塗佈單元的一輸 ^體製造裝置包含:-暴露部,戦在輸送單元^少3 ^積材料的-加熱單S、塗佈汽化的沉積材料的—塗佈單 以及 份上,以對外排放通過輸送單元輸送的 1 =單元,配置鄰接於暴露部以量測通過暴露部二: 201145638 因此,根據本發明,而非如習知製造 #感測單元配《接於觀單科 元間的距離。 心乃丞板和塗佈早 據此,可髓從塗佈單元塗佈的部份沉 感測’即使並沒有確實地沉積在透明臭 低』別早凡 半«的成本。 、在透月基极上,稭此可降低製造 此外’有機半導體製钱置可確私 之沉積材料的沉積量,同時可防止由 ^早70輸运 、讀力^一 L 佈早4佈之沉積材料 /儿積在感測早兀上。因此,可改善沉積在 料厚度的制可紐。 通儿積材 【實施方式】 現在將參考树_健實關,該等健實施例的範例 =解於附圖之中。雖然本文將配合該等較佳實施例來說明本 χ 不過應該瞭解該些實施例並非用以限制本發明。相反 地’本發明涵蓋隨附申請專利範圍所定義之本發明的精神與範 =可能包含的所有替代例、修正例、以及等效例,下文的詳 、”田°兒明中提出許雜定細節以便更職地瞭解本發明。配合下 面的圖式來討論下文的詳細說明將更容鎌解本發明的真實 ^生及其目的與優點’其令於所有圖式中’相同的元件符號代 表相同的部件。 圖1為根據一具體實施例說明一有機半導體製造裝置100 的側視圖。 201145638 參考圖1 ’有機半導體製造裳置100包括 一加熱單元12G、—塗佈單元⑽和-輸送單元5 存單存將被沉積在基板10上的沉積材料。儲 上部空間的儲存槽。沉積材料可被垂直 屬:沉積材料可是有機材料、無機材料、金 力二熱汽化儲存在儲存單元11〇中的沉積材料,且 可疋-加熱線圈(heatmg coil) 〇加熱單元12 二元η。之圓周表面存在。當施加電到加熱單== .,、、早το 120會產生熱以加熱和汽化沉積材料。 μ塗佈單元⑽塗佈汽化的沉赌料。塗佈單元13 :官結構’管結構的縱長方向上具有複數 ^ 13〇可配置成與基板10平行。塗佈單元13〇以一個^早= 積:在基板1Q上,同__裝置 :::以坐落於一垂直方向且以-正確(撕^ ㈣在基板1G上L可·定塗佈單元 、’。在一方向移動的基板1〇塗佈沉積材料。 至單元⑽的—端連接至儲存單元11G,且另—端連接 元=從儲存單元⑽輸送沉積材^ 預防熱到-特定溫度,以 7 201145638 同時,有機半導體製造裝置 元 160。 包括一暴露部150和一感測單 暴露部150係形成在輪送單元14〇的至少一部份上 料通過Ϊ送單元140輸送而對外排放。暴露部 中,吴;二在輸运單元140上的-孔洞。於另-實施例 可3有—特找徑的管,連接到輸送單元 卿:^:::::送的部份沉積材料’通過暴露部 …感測單元160鄰接於暴露部15〇配置。感測單元廳量測 L過暴路u卩150排放的沉積材料數量。藉由感測單元廳量測 的沉積材料排放量,可肋間接量測沉積在基板1Q上的沉積 材料的厚度。 如則所述’根據現有實施例之有機半導體製造裝置100具 有可細小透明基板和塗佈單元間距離的一結構,而非如習知有 ,半導體製造裝置中,將感測單元配置在一塗佈單元和一輸送 單元之間。ϋ此’可預防由塗佈單元塗佈之部分沉積材料遺漏 而沒有沉積在透明基板10上,則可降低製造成本。 可>儿積各種沉積材料在基板10上。為了沉積各種沉積材 料在基板10上,有機半導體製造裝置100可包括複數個塗佈 單元、複數個輸送單元、和複數個儲存單元。塗佈單元可以平 行排列於基板10上。同樣地,在此範例中,當感測單元16〇 配置鄰接於輸送單元而非如習知有機半導體製造裝置時,不會 有從塗佈單元塗佈的沉積材料沉積在任何的感測單元上,因此 201145638 以 性 "改善沉積在透明:::二 同時’有機半導體製造裝置湖更包含-噴嘴(未顯示)。 嗔嘴控制排放至外部的沉積材料數量。 = 至1Gmm。錄的設定是考慮到事實上當喷 旦i、於1 mm時’無法塗佈—沉積材料或允許塗佈非常 小,的沉積材料;當喷嘴的直徑大於10 mm時,將會塗佈超 大f的沉積材料。 圖2說明圖1之有機半導體製造裝置100中之感測單元 160的側視圖。 一底兀件丨61可被固定在圖丨之輸送單元14〇上。然而,底 tl件161除可被固定在圖}之輸送單幻4〇上外,還可鄰 送單元140配置。 滑動几件162餘合至底元件丨6丨及配置以朝向或遠 送單元140。 感測器164附著在滑動元件162。感測器164可是一氣相 感測器或石英晶體微量天平(qUartz CIyStal micr〇ba】ance ; 201145638 ^CM)。氣相制奸量峨暴露部15()排放的沉積材料數 篁。感測器164可以可移除的方式附著在滑動元件IQ上。 此,可簡單的以另一個新的感測器164進行替換。 同時,縮短感測器164和暴露部15〇間的距離, 164可更準確的量測從暴露部15〇排放的沉積材料數量,且 使沉積材料在單位時間内大量沉積在感測器164上,以縮 測器164的更換週期。 〜 、相反地’增加感測器164和暴露部15〇間的距離,將降低 感測器164量測從暴露部15〇排放的沉積材料數量的量測準確 且當沉積材料在每單位時間内以較少沉積材料沉積在感測 器164上時,感測器164的更換週期將會增 加。 s曰 由於具有上述結構的感測單元16〇可利用滑動元件IQ改 變感測器164和暴露部15〇間的距離,感測器164可準確量測 攸暴露。卩150排放的沉積材料數量,而適當地維持感測哭164 的更換週期。 °° 圖3說明圖1之有機半導體製造裝置1〇〇中變化的感測單 元160之側視圖。 〜 參考圖3’變化的感測單元160可更包括一轉動元件163。 轉動元件163與滑動元件162轉動地耦合。舉例來說,轉 動元件163與滑動元件162樞紐搞合(hinge-coupled)。用來耦 201145638 163與Γ元件162 _姆(㈣柯包括—摩擦 未顯示)’以產生-預定程度的雜力。摩擦元件可以是 1板,配置在獅元件163的翻部件柯動 。=擦元件可用關定轉動元件163以相對於滑動元件⑹ L^TTon angle)m 0 f ^ ^ 係附耆在轉動元件163上。 期 如前所述’轉動元件163係轉動以改變感· 164和暴露 部150間的距離,藉此使感測$ 164可準確地量測從暴露部 i5〇排放的沉積材料數;t,而適當轉持感卿164的更換週 同時,有機半導體製造裝置100(如圖υ可更包括一沉積 ?止元件(未齡)。當感測單元W。峨此相_複數個感測 單元排列組成,沉積防止元件係位於感測單元16〇之間以預防 沉積材料從暴露部150排放而沉積在該感測單元16〇上。沉積 防止元件可具有一平板形狀(platedshape)。 另一方面,感測單元160可收納於單獨密封腔體(separate sealed chamber)中。經由上述結構,可以預防從暴露部15〇排 放的沉積材料沉積在感測單元160的周圍部份上。 同時,部份的輸送單元140可以一角度彎曲,且暴露部 150可以形成在輸送單元140的彎曲部件上。輸送單元14〇的 彎曲結構可縮小有機半導體製造裝置1〇〇的尺寸,且可使有機 半導體製造裝置100的保養、維修變簡單。 11 201145638 發光在製造主動矩陣有機 來實施。亦本發明心幾種形式 ,_定,否則可廣泛制, 申請專利範圍中。麵化或修正之等同替代物,係包括於 【圖式簡單說明】 如上,將可藉由參考以上實施例的詳細 本發明詳細的說明 "兄明,伴賴式結合解如有最佳的了解 側視^。丨為根據—騎實侧說明—有機半導體製造裝置的 。圖2說日箱1之有機半導體製造裝置中之感測單元的侧視 ,3說明圖1之有機半導體製造裝置中變形的感測單元的 【主要元件符號說明】 10 基板 100有機半導體製造梦w 110 儲存單元 、 120 加熱單元 130 塗佈單元 140 輪送單元 12 201145638 150 暴露部 160 感測單元 161 底元件 162 滑動元件 163 轉動元件 164 感測器201145638 VI. Description of the Invention: [Technical Field] The present invention relates to an apparatus for manufacturing an organic semiconductor, and more particularly to an organic semiconductor manufacturing apparatus which coats an organic material on a substrate. [Prior Art] Generally, Chiyou, an organic light-emitting diode (〇LED) panel is compared with a current liquid crystal display (LCD) panel, and has a low voltage drive, an ultra-thin shape, a wide viewing angle, a reaction speed, and the like. advantage. The organic light emitting diode panel emits current through the transparent metal electrodes respectively formed on the lower plate and the upper plate by applying a predetermined voltage, and the current is transmitted through the organic light emitting material embedded between the lower plate and the upper plate, wherein the lower plate is a transparent glass. The substrate has an indium tin oxide (ITO) transparent electrode pattern formed thereon as a positive electrode 'and the upper plate is a substrate having a metal electrode formed thereon as a negative electrode. Organic semiconductor devices are wire-made organic light-emitting diode (OLED) panels of this type. In order to manufacture an organic light emitting diode (OLED) panel having the above structure, a process including etching, deposition, and surface modification is required to be performed on a transparent substrate. The deposition-deposited material is on the plate of the plateau by a uniform coating using a coating device to deposit the material on the transparent substrate. In the = side piece (four) tree · on the board, the sugar is too thick, the individual sense of the difference (separatesensor) to measure. The sensor was measured by Xu Fanger. Gha is usually between ΐίίίΓ. The coating device is solidified with the transparent substrate. Therefore, when the deposited material is coated from the coating device, part 4 201145638 is inevitably omitted without being deposited on the transparent substrate. Further, in general, the organic semiconductor manufacturing apparatus includes a plurality of coating units disposed in each of the dispensing units. For the paste, the organic semiconductor manufacturing apparatus may include first and second coating units, the first sensor is disposed in the first coating unit and the second sensor is disposed in the second coating unit. In this example, the portion of the deposited material coated from the first coating unit may accumulate on the first sense, so that the second sensor cannot accurately measure the sinking from the coating unit. the amount. Therefore, the reliability of the measurement of the thickness of the deposited material on the oscillating plate will decrease. SUMMARY OF THE INVENTION The distance between the transparent substrate and the organic semiconductor fabrication 涂布 coating device described in the present invention can be shortened. Material deposition two == sense conductor manufacturing device 'can avoid deposition,: rw / ^ provide an organic material manufacturing device, including storage = accumulation on the substrate - storage unit, storage unit, vaporization storage unit 1 and ^^ connected to the ^= element and the other end connected to the coating unit of a body manufacturing device comprises: - an exposed portion, a small amount of material in the conveying unit, a heating element S, a coating vaporization Depositing the material-coating sheet and the portion to discharge the 1 = unit that is transported through the transport unit to the outside, and arranging adjacent to the exposed portion to measure through the exposed portion 2: 201145638 Therefore, according to the present invention, instead of manufacturing as in the conventional # The sensing unit is equipped with the distance between the viewing units. The heart is a slab and coated early. According to this, the part of the core can be coated from the coating unit to sense the 'even if it is not deposited reliably in the transparent odor. On the base of the moon, the straw can reduce the deposition amount of the deposition material which can be made by the organic semiconductor money, and at the same time prevent the transportation from the early 70, the reading force ^1 L cloth early 4 The deposited material/child is on the early detection. Therefore, it is possible to improve the thickness of the deposited material. Tonger Building Materials [Embodiment] Reference tree _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Although the present invention will be described in conjunction with the preferred embodiments, it should be understood that these embodiments are not intended to limit the invention. Rather, the invention encompasses the spirit and scope of the invention as defined by the appended claims, and all alternatives, modifications, and equivalents that may be included, the details of which are set forth below. The details of the present invention will be understood from the following detailed description of the invention. 1 is a side view illustrating an organic semiconductor manufacturing apparatus 100 according to an embodiment. 201145638 Referring to FIG. 1 'The organic semiconductor manufacturing skirt 100 includes a heating unit 12G, a coating unit (10), and a conveying unit 5 The depositing material is to be deposited on the substrate 10. The storage material of the upper space is stored. The deposition material may be vertically genus: the deposition material may be an organic material, an inorganic material, or a deposition of gold thermothermal vaporization in the storage unit 11〇. Material, and heat-heating coil (heatmg coil) 〇 heating unit 12 binary η. The circumferential surface exists. When applying electricity to the heating sheet == ., ,, early το 120 Heat is generated to heat and vaporize the deposited material. The μ coating unit (10) coats the vaporized smear. The coating unit 13: the official structure 'tube structure has a plurality of lengths in the longitudinal direction that can be disposed in parallel with the substrate 10. The coating unit 13 is formed on the substrate 1Q, the same as the __ device::: is located in a vertical direction and is correct - (tear ^ (4) on the substrate 1G can be fixed coating unit, The substrate 1 moved in one direction is coated with a deposition material. The end of the unit (10) is connected to the storage unit 11G, and the other end is connected to the storage unit (10) to prevent heat to a specific temperature. 7 201145638 At the same time, the organic semiconductor manufacturing device unit 160 includes an exposed portion 150 and a sensing single exposed portion 150 formed on at least a portion of the feeding unit 14 that is discharged by the feeding unit 140 for external discharge. In the Ministry, Wu; two holes in the transport unit 140. In another embodiment, there may be a tube with a special diameter, connected to the transport unit: ^::::: part of the deposited material' The sensing unit 160 is disposed adjacent to the exposed portion 15A by the exposed portion. The sensing unit hall The amount of deposited material discharged from the blast path u 卩 150 is measured. The thickness of the deposited material deposited on the substrate 1Q can be indirectly measured by the ribs by measuring the amount of deposited material measured by the sensing unit. The organic semiconductor manufacturing apparatus 100 of the prior embodiment has a structure in which the distance between the thin transparent substrate and the coating unit can be different, and as in the semiconductor manufacturing apparatus, the sensing unit is disposed in a coating unit and a conveying unit. Between this, it is possible to prevent a part of the deposition material coated by the coating unit from being omitted without being deposited on the transparent substrate 10. The manufacturing cost can be reduced. Various deposition materials can be deposited on the substrate 10. In order to deposit various deposition materials on the substrate 10, the organic semiconductor manufacturing apparatus 100 may include a plurality of coating units, a plurality of conveying units, and a plurality of storage units. The coating units may be arranged in parallel on the substrate 10. Similarly, in this example, when the sensing unit 16 is disposed adjacent to the transport unit instead of the conventional organic semiconductor manufacturing apparatus, no deposition material coated from the coating unit is deposited on any of the sensing units. Therefore, 201145638 with the effect of "improving deposition in the transparent::: two simultaneous 'organic semiconductor manufacturing device lake more contains - nozzle (not shown). The mouth controls the amount of deposited material that is discharged to the outside. = to 1Gmm. The setting is based on the fact that when the spray is i, at 1 mm, 'cannot be coated—deposited material or allowed to coat very small, the deposited material; when the diameter of the nozzle is larger than 10 mm, it will be coated with a large f Deposit material. FIG. 2 illustrates a side view of the sensing unit 160 in the organic semiconductor manufacturing apparatus 100 of FIG. 1. A bottom jaw 61 can be attached to the transport unit 14A of the figure. However, the bottom piece 161 can be fixed to the transport unit of Fig. 1 and can be disposed adjacent to the unit 140. Several pieces of 162 are slid to the bottom member 丨6丨 and configured to face or travel the unit 140. A sensor 164 is attached to the sliding element 162. The sensor 164 can be a gas phase sensor or a quartz crystal microbalance (qUartz CIyStal micr〇ba) ance; 201145638 ^CM). The number of deposited materials discharged from the gas phase of the exposure section 15 () is 篁. The sensor 164 can be attached to the sliding element IQ in a removable manner. Thus, it can be simply replaced with another new sensor 164. At the same time, the distance between the sensor 164 and the exposed portion 15〇 is shortened, and the amount of deposition material discharged from the exposed portion 15〇 can be more accurately measured, and the deposited material is deposited on the sensor 164 in a large amount per unit time. , with the replacement cycle of the reducer 164. ~, conversely, 'increasing the distance between the sensor 164 and the exposed portion 15〇, the measurement of the amount of deposited material that reduces the amount of deposition material discharged from the exposed portion 15 by the sensor 164 is accurate and when the deposited material is in a unit time When less deposition material is deposited on the sensor 164, the replacement cycle of the sensor 164 will increase. Since the sensing unit 16 having the above structure can change the distance between the sensor 164 and the exposed portion 15 by the sliding member IQ, the sensor 164 can accurately measure the flaw exposure.卩150 discharges the amount of deposited material while properly maintaining the replacement cycle of sensing crying 164. °° FIG. 3 illustrates a side view of the sensing unit 160 in the organic semiconductor manufacturing apparatus 1 of FIG. The sensing unit 160, which varies with reference to FIG. 3', may further include a rotating member 163. The rotating element 163 is rotationally coupled to the sliding element 162. For example, the rotating element 163 is hinged-coupled to the sliding element 162. Used to couple 201145638 163 with the Γ element 162 _ m ((4) ke include - friction not shown) to produce - a predetermined degree of friction. The friction element may be a plate that is disposed on the flip member of the lion element 163. The wiping element can be attached to the rotating element 163 with respect to the sliding element (6) L^TTon angle) m 0 f ^ ^. As described above, the rotating member 163 is rotated to change the distance between the sensing 164 and the exposed portion 150, whereby the sensing $164 can accurately measure the amount of deposited material discharged from the exposed portion i5〇; At the same time, the organic semiconductor manufacturing apparatus 100 (as shown in FIG. 更 may further include a deposition stop element (not aged). When the sensing unit W. 峨 this phase _ a plurality of sensing units are arranged The deposition preventing element is located between the sensing unit 16A to prevent deposition material from being discharged from the exposed portion 150 and deposited on the sensing unit 16A. The deposition preventing member may have a plated shape. The measuring unit 160 can be housed in a separate sealed chamber. Through the above structure, the deposition material discharged from the exposed portion 15 can be prevented from being deposited on the peripheral portion of the sensing unit 160. Meanwhile, the partial conveying The unit 140 may be bent at an angle, and the exposed portion 150 may be formed on the curved member of the transport unit 140. The curved structure of the transport unit 14〇 may reduce the size of the organic semiconductor manufacturing device 1〇〇, and may have The maintenance and repair of the semiconductor manufacturing apparatus 100 becomes simple. 11 201145638 Luminescence is implemented in the manufacture of active matrix organic. Also, the invention has several forms, _ fixed, otherwise it can be widely applied, and the patent application scope is equivalent. The above is included in the detailed description of the drawings. As will be explained in detail by referring to the detailed description of the above embodiments, the brothers and the accompanying solutions have the best understanding of the side view ^. According to the embodiment of the organic semiconductor manufacturing device, FIG. 2 is a side view of the sensing unit in the organic semiconductor manufacturing apparatus of the day box 1, and FIG. 3 is a view showing the sensing unit of the organic semiconductor manufacturing apparatus of FIG. Explanation of main component symbols] 10 substrate 100 organic semiconductor manufacturing dream w 110 storage unit, 120 heating unit 130 coating unit 140 transfer unit 12 201145638 150 exposed portion 160 sensing unit 161 bottom member 162 sliding member 163 rotating member 164 sensor

Claims (1)

201145638 七、申請專利範圍: 解導難紗置4域赫簡在—基板上 之 料的儲存單元、汽化該儲存單4的該“材料的 加,.、、早兀、塗佈該汽化的沉積材料的 連接至該儲存單元且另—端連接 =兀以及力而 is 2㈣儲存單元輸送該沉積材料至·佈單元,其中 -暴露部,形成在職送單摘 放魏該,單元輸送的一部份該沉積材料:及對外排 感測單元’配置祕於該暴露部以量測通過該暴露部排 放的該沉積材料的一數量。 機半導體製造裝置,其中 2.如申請專利範圍第1項所述之有 該感測單元包含: 一底元件; 置成得以移動朝向或遠 4骨動元件,合至該底元件並配 離該輸送單元;以及 一感測器,附著至該滑動元件。 3.如申。月專利範圍第i項所述之有機半導體製造裝置,其中 該感測單元包含: 一底元件; /月動元件,耗合至該底元件並配置以移動朝向或遠離 該輸送單元; 轉動元件’與#滑動S件轉動地輕合;以及 一感測器,附著至該滑動元件。 14 201145638 4.如申請專利範圍第】項所述之有 至少一沉積防止元件,以預防細積^ 且更包含位於該感測單 該感測單元由魏麵測單元所域,、雜置,其尹 沉積在該感測 數量 有機半導體製造裝置’其中 15201145638 VII. Patent application scope: Deconstructing the storage unit of the material on the substrate, vaporizing the storage material of the storage sheet 4, and adding, vaporizing, depositing the vaporized deposit. The material is connected to the storage unit and the other end connection = 兀 and the force is 2 (4) the storage unit transports the deposition material to the cloth unit, wherein the - exposed portion forms a part of the unit delivery The deposition material: and the external row sensing unit 'configure the exposure portion to measure an amount of the deposition material discharged through the exposure portion. The machine semiconductor manufacturing device, wherein 2. as described in claim 1 The sensing unit comprises: a bottom member; configured to move toward or away from the bone member, coupled to the base member and coupled to the transport unit; and a sensor attached to the sliding member. The organic semiconductor manufacturing apparatus of claim 1, wherein the sensing unit comprises: a bottom element; a lunar element, which is coupled to the bottom element and configured to move toward or away from the input. a feeding unit; the rotating member 'synchronously slidably coupled with the #sliding member; and a sensor attached to the sliding member. 14 201145638 4. As described in the scope of the patent application, there is at least one deposition preventing member, Preventing the fine product ^ and further including the sensing unit located in the sensing unit by the Wei surface measuring unit, miscellaneous, and Yin is deposited in the sensing quantity of the organic semiconductor manufacturing device'
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