201140688 六、發明說明： 【發明所屬之技術領域】 本發明是關於基材處理設備，其在腔室内產生電聚來 處理基材表面。 【先前技術】 如同此技藝所熟知，製造諸如大型積體電路（LSI)或平 面顯示器（FPD)等電子裝置通常會歷經如真空處理基材 般的處理。 在真空處理方法中，氣體供應至腔室，然後經高壓放 電產生電漿。電漿粒子的加速力把物質物理性濺射到基 材。基材上的物質則由電漿自由基化學性分解。 利用電聚處理基材的技術依據形成電漿的方法分為電 漿蝕刻（PE)技術、反應離子蝕刻（RIE)技術、磁場強化反 應離子钱.刻（MERIE)技術、電子迴旋加速共振（ecr)技 術、變壓耦合電漿（TCP)技術、感應耦合電漿（ICP)技術 等。 特別地’形成高密度電漿及增進玻璃（或半導體）基材 上之電漿密度均勻性將大大影響沉積或蝕刻性能。為達 成k些目的，已開發各種產生電漿的方法。感應耦合電 聚（ICP)法為電漿產生方法的一代表例。 ICP法為產生高密度電漿的方法，其依據原理為當線 圈纏繞介電質以致電場改變時，線圈内將產生感應磁 3 201140688 場，進而在反應腔室内形成二次感應電流。201140688 VI. Description of the Invention: [Technical Field] The present invention relates to a substrate processing apparatus which generates electropolymerization in a chamber to treat a surface of a substrate. [Prior Art] As is well known in the art, the manufacture of an electronic device such as a large integrated circuit (LSI) or a flat panel display (FPD) is usually subjected to a process such as vacuum processing of a substrate. In the vacuum processing method, gas is supplied to the chamber, and then discharged by high voltage to generate plasma. The acceleration of the plasma particles physically sputters the material onto the substrate. The substance on the substrate is chemically decomposed by plasma radicals. The technology of electro-polymerizing a substrate is divided into a plasma etching (PE) technique, a reactive ion etching (RIE) technique, a magnetic field-enhanced reaction ion-energy (MERIE) technique, and an electron cyclotron resonance (ecr). Technology, transformer-coupled plasma (TCP) technology, inductively coupled plasma (ICP) technology. In particular, the formation of high density plasma and enhanced plasma density uniformity on glass (or semiconductor) substrates will greatly affect deposition or etch performance. Various methods of producing plasma have been developed for some purposes. Inductively coupled electropolymerization (ICP) is a representative example of plasma generation methods. The ICP method is a method for producing high-density plasma. The principle is that when the coil is wound around the dielectric to change the field, an inductive magnet 3 201140688 field is generated in the coil, and a secondary induced current is formed in the reaction chamber.
一般來說’利用1CP法之基材處理設備包括下電極， 其設在反應腔室的下部。I 材放在下電極上。設備更包 括天線’其設在腔室内或輕接腔室外殼的蓋框架上4 頻（RF)功率施加至天線。基材表面是藉由供應反應氣體 至腔室及產生電漿處理。 然在基材處理設備的電漿處理操作中，㈣製程的副 產物(如聚合物等)會沉積在陶竟視窗的下部。若基材處 理操作期間沉積副產物位移，則處理操作可能產生瑕蔽。 為克服此問題，提出一太、土 ^ 出方法’其將避免蝕刻期間形成 之副產物沉積的蓋子安裝在陶竟視窗前。但隨著平面顯 示器等尺寸變大’腔室或視窗尺寸亦隨之增大。故在習 知加熱方法中，很難有效防止副產物沉積於視窗。 應理解上述習知技術為本發明之發明人在推論本發明 前或在推論本發明的過程所獲知的資訊，且當不意味著 習知技術的結構在申請曰前已眾所周知。 【發明内容】 因此’本發明記取先前技術發生的上述問題，本發明 =目的為提供具有加熱視窗之結構的基材處理設備， :,過排放加熱空氣至視窗上的方式來加熱視窗，以防 副產物沉積於視窗，進而加強設備的可靠度。 本發明之另一目的為提供具有視窗加熱結構的基材處 201140688 —裝置可同時加熱視窗及冷卻 、结構’也可增強設備的性能。 天 k供具有視窗加熱結構的基 ’其内處理基材；一視窗， 室的内部空間與天線之間的 成；一加熱管，設於視窗上 理設備，其配置成使單 線’藉此儘管是具簡易 為達成上述目的，本發明 材處理設備，包含：_腔室 設在腔室的上部，以實現腔 搞接’且視窗由絕緣材料組 =，加熱管排放加熱空氣至視窗的上表面上而加熱視 窗，以及用以供應加熱空氣至加熱管内的裝置。 腔室包括腔室外殼和耦接腔室外殼上端的蓋框架。蓋 框架包含外框架，其形成多邊形框架結構的周邊；以及 分隔框架，其設於外框架内且互相耦接而將視窗分隔成 複數個視窗。該等視窗可包括：中央視窗，纟由分隔框 架界疋且位於蓋框架的中央部分上；以及圍繞中央視窗 的複數個周圍視窗，周圍視窗彼此被分隔框架隔開。加 熱管可同時加熱中央視窗和周圍視窗。 加熱管可朝水平方向排列在視窗上方。複數個注入孔 形成於加熱管中。注入孔定向朝向視窗。 該裝置包含/尚璇產生器，其同時產生加熱空氣和冷卻 空氣。 另外’冷卻通道可形成於天線中，使得冷卻流體沿著 天線流過冷卻通道。從該裝置產生的冷卻空氣供應至天 線的冷卻通道内，以冷卻天線。 本發明之上述關鍵技術解決方式在配合參閱詳細說明 與所附圖式後，將變得更清楚易懂，並將提出及解釋根 201140688 據本發明之其它技術解決方式。 【實施方式】 本發明之較佳實施例將參照所附圖式詳述於下。 現請參照圖式，其中各圖中相同的元件符號用來表示 相同或相仿的部件。 第1圖為顯示根據本發明一實施例之基材處理設備構 造的概略截面圖。 根據本發明之基材處理設備包括腔室外殼u、基材支 撐臺15、下電極17、蓋框架2〇、複數個視窗、天線 4〇、射頻（RF)電源供應器5〇和處理氣體供應單元6〇。基 材支撐臺15和下電極17設於腔室外殼u，基材s放在 基材支撐臺15和下電極17上。蓋框架2(^接腔室外殼 U的上端。視窗30設於蓋框架2〇中。天線4〇和尺？電 源供應器50位於視窗30上。處理氣體供應單元6〇供應 處理氣體至腔室10中’其是由腔室外殼心蓋框架：〇 所界定。 根據本發明之基材處理設備的特徵部件將進一步 於下。 首先’將參照第2及3圖說明蓋框架2〇。 蓋框架20具有矩形框架結構。蓋框架2()的内部分成 五區’五個區域分別定義五個視窗3 〇。 為形成此結構 蓋框架20包括外框帛21，其構成矩 201140688 形框架結構的周邊、以及分隔框架25，其設於外框架21 内且互相輕接’使得外框架2 1的内部分成五個部分而形 成五個視窗3 〇。 形成於蓋框架20的五個視窗30包含一中央 30A，其位於蓋框架2〇的中央部分、以及四個周圍視窗 30B ’其圍繞中央視窗30A排列。 中央視窗30A和周圍視窗30B呈矩形。在此實施例 中，如圖所示，四個周圍視窗3〇B按順時針方向繞著中 央視窗30A排列。當然，四個周圍視窗3〇B亦按逆時針 方向繞著中央視窗3〇A排列。 在周圍視窗30B呈矩形的例子中，每一周圍視窗3〇b 包括第-側邊a、第二側邊b、第三側邊c和第四側邊心 第一侧邊a隔開周圍視窗3〇B和中央視窗3〇a與另一相 鄰周圍視窗30B’其為沿順時針方向的下一視窗。第二 側邊b隔開周圍視窗则和沿順時針方向…後的另 -相鄰周圍視窗规。第三側邊。面對第—側邊&並盘 蓋框架2〇的周圍表面接壤。第四側邊d面對第二側邊b 並與蓋框架20的周圍表面接壤。 ，在期望上，各周圍視窗細的第一側邊a同時與令央 視窗30A的對應側邊和位於其前 、 側邊叫使所有周園視窗30:=窗遍的第二 在中央周I &料針方向連續排 另外’各周圍視窗30B的第—鈿这 料痛\ 乐和第二側邊b 對應分隔框架25構成，其第三側邊 由 遭c和第四側邊d由外 201140688 框架21構成。 如此’各周圍視窗30B與中央視窗30A四個側邊的其 中一對應側邊接壤’四個周圍視窗3〇B則按順時針或逆 時針方向繞著中央視窗30A排列。故整體而論，周圍視 窗30B形成規則排列。 由如陶瓷材料組成之絕緣板3丨插入依上述排列形成 的中央視窗30A和周圍視窗30B。各具梯狀結構的板支 擇件22形成在外框架21的内面和分隔框架25的兩側， 使絕緣板3 1的周邊由對應板支撐件2 2所支撐。 另外’支架23、26裝設於外框架21和分隔框架25， 以免絕緣板31不當脫離視窗30。如圖所示，設於外框 架21的支· 23具有L形截面，設於分隔框架25的支架 26具有U形截面。 u形支架26可同時支撐設於單一分隔框架對側的絕緣 板31。 支架23、26由固定配件等固定於蓋框架2〇。 另外，必要時可以各種方式修改支架23、26的形狀和 結構。 參照第3圖’加熱流體通道24a形成於蓋框架2〇的外 框架21中，使得加熱蓋框架的流體沿著加熱流體通道 24a流動。此外，入口和出口連接短管2仆設在外框架 21的預定部分，使加熱流體通道24a經由短管2仆連接 外部加熱流體供應管線。 另外’天線通行凹槽27形成於蓋框架2〇的分隔框架 201140688 25而在分隔框架25中產生空間，如此周圍天線45(其將 詳述於後）可通過分隔框架25。換言之，如第2圖所示， 天線通行凹槽27形成於分隔框架25，其將周圍視窗30B 互相隔開。 在第3圖中，元件符號28代表天線固定托架，其安裝 在各天線通行凹槽27中，以將天線固定於對應分隔框架 25。元件符號29代表天線支架，其覆蓋各天線固定托架 28以防周圍天線45移離其安裝位置。較佳地，天線支 架29亦具有U形截面。更佳地，天線支架29配置成使 其也可用來支承對應絕緣板3 1。 同時，雖然蓋框架20乃描繪成具有矩形框架結構，但 本發明不限於此。❹，蓋框架2〇彳具五邊形或六邊形 框架結構’ 1可視需求以各種方式修改其結構。 設有具上述結構之蓋框架2〇的基材處理設備中的天 線4〇排列方式將參照第3及4圖說明如下。 參.、、、第3圖’二個中央天線41安裝在蓋框架2〇的中 央視_ 3 0Α。四個周圍天線45安裝在四個周圍視窗 一個中央天線41包含二個天線4〇，其引至蓋框架的 中“且在中央視窗3〇α上朝順時針方向繞著中央視窗 30Α的中心延伸。 、個周圍天線45配置成使各天線引至一個對應周圍 視® 3GB ϋ朝順時針方向相繼通過其它三個周圍視窗 例如參照第3圖，第一周圍天線^朝順時針方 向經由第二周圍視窗302和第三周圍視窗303從第-周 9 201140688 圍視窗301延伸到第四周園湳帟Generally, the substrate processing apparatus using the 1CP method includes a lower electrode which is disposed at a lower portion of the reaction chamber. The I material is placed on the lower electrode. The device further includes an antenna 'which is placed in the chamber or on the cover frame of the light chamber housing to apply 4 frequency (RF) power to the antenna. The surface of the substrate is treated by supplying a reactive gas to the chamber and generating a plasma. However, in the plasma processing operation of the substrate processing equipment, (4) by-products of the process (such as polymers, etc.) are deposited in the lower portion of the window. If the deposition by-products are displaced during the substrate processing operation, the processing operation may create a concealment. In order to overcome this problem, a method for removing the by-product deposit formed during etching is proposed in front of the window. However, as the size of the flat display becomes larger, the size of the chamber or window also increases. Therefore, in the conventional heating method, it is difficult to effectively prevent by-products from being deposited on the window. It is to be understood that the above-described prior art is the information obtained by the inventors of the present invention prior to the inference of the present invention or the inference of the present invention, and does not mean that the structure of the prior art is well known before the application. SUMMARY OF THE INVENTION Therefore, the present invention is directed to the above-described problems occurring in the prior art, and the present invention is directed to providing a substrate processing apparatus having a structure for heating a window: heating the window by discharging the heated air to the window to prevent By-products are deposited in the window to enhance the reliability of the equipment. Another object of the present invention is to provide a substrate having a window heating structure. 201140688 - The device can simultaneously heat the window and cool, and the structure can also enhance the performance of the device. The sky k is provided with a window heating structure base therein; the inner processing substrate; a window, the inner space of the chamber and the antenna; a heating tube disposed on the window processing device, configured to make the single line 'although In order to achieve the above object, the material processing apparatus of the present invention comprises: a chamber is disposed at an upper portion of the chamber to achieve a cavity connection and the window is made of an insulating material group =, the heating tube discharges the heated air to the upper surface of the window The upper window is heated and the means for supplying heated air to the heating tube. The chamber includes a chamber housing and a cover frame that couples the upper end of the chamber housing. The cover frame includes an outer frame that forms a perimeter of the polygonal frame structure, and a divider frame that is disposed within the outer frame and coupled to each other to divide the window into a plurality of windows. The windows may include a central window, a partition frame and a central portion of the cover frame, and a plurality of surrounding windows surrounding the central window, the surrounding windows being separated from each other by a dividing frame. The heating tube heats the central window and the surrounding window at the same time. The heating tubes can be arranged horizontally above the window. A plurality of injection holes are formed in the heating tube. The injection holes are oriented towards the window. The apparatus comprises a / 璇 generator that produces both heated air and cooling air. Additionally, a cooling passage may be formed in the antenna such that the cooling fluid flows through the cooling passage along the antenna. Cooling air generated from the device is supplied to the cooling passage of the antenna to cool the antenna. The above-mentioned key technical solutions of the present invention will become more apparent and easy to understand after referring to the detailed description and the drawings, and will provide and explain the other technical solutions according to the present invention. [Embodiment] The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Reference is now made to the drawings in which like reference numerals Fig. 1 is a schematic cross-sectional view showing the construction of a substrate processing apparatus according to an embodiment of the present invention. The substrate processing apparatus according to the present invention includes a chamber casing u, a substrate support table 15, a lower electrode 17, a cover frame 2, a plurality of windows, an antenna 4, a radio frequency (RF) power supply 5, and a process gas supply. Unit 6〇. The substrate supporting table 15 and the lower electrode 17 are provided in the chamber casing u, and the substrate s is placed on the substrate supporting table 15 and the lower electrode 17. The cover frame 2 is connected to the upper end of the chamber casing U. The window 30 is disposed in the cover frame 2. The antenna 4 and the power supply 50 are located on the window 30. The processing gas supply unit 6 is supplied with the processing gas to the chamber 10. The 'is defined by the chamber casing cover frame: 〇. The features of the substrate processing apparatus according to the present invention will be further below. First, the cover frame 2 will be described with reference to Figures 2 and 3. Cover frame 20 It has a rectangular frame structure. The inside of the cover frame 2() is divided into five zones. The five zones define five windows 3 分别. To form the structural cover frame 20, the outer frame 帛21 is formed, which constitutes the periphery of the moment 201140688 frame structure, And a partition frame 25 which is disposed in the outer frame 21 and is lightly coupled to each other' such that the inner portion of the outer frame 21 is divided into five portions to form five windows 3 〇. The five windows 30 formed in the cover frame 20 include a central 30A. It is located at the central portion of the cover frame 2〇 and the four surrounding windows 30B' are arranged around the central window 30A. The central window 30A and the surrounding window 30B are rectangular. In this embodiment, as shown, four surrounding windows are shown. 3〇B is arranged clockwise around the central window 30A. Of course, the four surrounding windows 3〇B are also arranged counterclockwise around the central window 3〇A. In the case where the surrounding window 30B is rectangular, each circumference The window 3〇b includes a first side a, a second side b, a third side c and a fourth side first side a separated from the surrounding window 3〇B and the central window 3〇a and the other phase The adjacent surrounding window 30B' is the next window in the clockwise direction. The second side b separates the surrounding window and the other adjacent window member in the clockwise direction. The third side. - the side & and the surrounding surface of the disc cover frame 2 is bordered. The fourth side d faces the second side b and borders the peripheral surface of the cover frame 20. In the expectation, each of the surrounding windows is fine first The side a is simultaneously with the corresponding side of the central window 30A and on the front side, the side is called to make all the peripheral windows 30: = the second of the window is continuously arranged in the central circumference I & The first side of 30B is composed of the same partition frame 25, and the third side is composed of c and the fourth side. d consists of the outer 201140688 frame 21. Thus, each of the surrounding windows 30B is bordered by one of the four sides of the four sides of the central window 30A. The four surrounding windows 3〇B surround the central window 30A clockwise or counterclockwise. In general, the peripheral windows 30B are formed in a regular arrangement. The insulating sheets 3, such as ceramic materials, are inserted into the central window 30A and the peripheral window 30B formed in the above-described arrangement. The plate-receiving members 22 each having a ladder-like structure are formed. On the inner surface of the outer frame 21 and the two sides of the partition frame 25, the periphery of the insulating plate 31 is supported by the corresponding plate support 22. Further, the brackets 23, 26 are mounted on the outer frame 21 and the partition frame 25 to avoid the insulating plate. 31 improperly detached from the window 30. As shown in the figure, the branch 23 provided on the outer frame 21 has an L-shaped cross section, and the bracket 26 provided on the partition frame 25 has a U-shaped cross section. The u-shaped bracket 26 can simultaneously support the insulating sheets 31 provided on the opposite sides of the single partition frame. The brackets 23, 26 are fixed to the cover frame 2 by a fixing fitting or the like. In addition, the shape and structure of the brackets 23, 26 can be modified in various ways as necessary. Referring to Fig. 3, a heating fluid passage 24a is formed in the outer frame 21 of the cover frame 2, so that the fluid that heats the cover frame flows along the heating fluid passage 24a. Further, the inlet and outlet connection stubs 2 are disposed at predetermined portions of the outer frame 21 such that the heating fluid passages 24a are connected to the external heating fluid supply line via the short tubes 2. Further, the antenna passage groove 27 is formed in the partition frame 201140688 25 of the cover frame 2 to create a space in the partition frame 25, so that the surrounding antenna 45 (which will be described later in detail) can pass through the partition frame 25. In other words, as shown in Fig. 2, the antenna passage grooves 27 are formed in the partition frame 25, which separates the peripheral windows 30B from each other. In Fig. 3, reference numeral 28 denotes an antenna fixing bracket which is mounted in each of the antenna passage grooves 27 to fix the antenna to the corresponding partition frame 25. Component symbol 29 represents an antenna mount that covers each antenna mount bracket 28 to prevent the surrounding antenna 45 from moving away from its installed position. Preferably, the antenna mount 29 also has a U-shaped cross section. More preferably, the antenna holder 29 is configured such that it can also be used to support the corresponding insulating plate 31. Meanwhile, although the cover frame 20 is depicted as having a rectangular frame structure, the present invention is not limited thereto. ❹, the cover frame 2 cooks a pentagon or a hexagonal frame structure '1' can modify its structure in various ways as desired. The arrangement of the antennas 4 in the substrate processing apparatus provided with the cover frame 2 of the above structure will be described below with reference to Figs. 3 and 4. The two central antennas 41 of the Fig. 3D are mounted on the central view of the cover frame 2〇. Four surrounding antennas 45 are mounted in four surrounding windows. A central antenna 41 includes two antennas 4〇 that lead into the middle of the cover frame and extend clockwise around the center of the central window 30Α on the central window 3〇α. The surrounding antennas 45 are arranged such that the antennas are led to a corresponding peripheral view® 3GB. The clockwise direction passes through the other three surrounding windows, for example, referring to FIG. 3, the first surrounding antenna is clockwisely passing through the second circumference. Window 302 and third surrounding window 303 extend from week-week 9 201140688 perimeter window 301 to fourth week garden
Jw周固視囪3〇4。第二周圍天線452 朝順時針方向經由第三周圍視窗3。3 >第四周圍視窗 304從第二周圍視窗3G2延伸到第—周圍視窗則。第二 周圍天線452的開始端位在第—周圍天線45ι内。第三 周圍天線453和第四周圍天線454按與第一周圍天線451 和第二周圍天、線452相同的方式排列。故整體而論，四 個周圍天線45規則地排成螺旋形，且彼此等距相隔。 圖中疋件符號401代表引進中央天線41或各周圍天線 45的部分。元件符號4〇5代表末端支撐件，其設在中央 天線41或各周圍天線45延伸所至的位置，使得對應天 線40經由末端支撐件連接接地部分。 較佳地，二個天線插孔28a形成於每一天線固定托架 28，使得穿過對應分隔框架25的三個周圍天線45插入 各天線插孔28a。天線支架29(參照第2圖）耦接天線固 定托架28的上部，使得周圍天線45穩固地固定於天線 固定托架28。 在本發明上述提供之蓋框架20和天線4〇的排列中， 腔室内的電漿產生方向與周圍視窗和天線繞著蓋框架之 中央視窗排列的結構有關。故在基材處理操作期間，不 僅是腔室的中央部分，腔室的周圍亦均勻形成電漿密 度。另外，分隔框架25的周圍會產生渦流，因而可更均 勻地分配電漿。如此’由於上述蓋框架2〇與天線4〇的 排列，將可明顯改善處理性能。 第4圖為顯示另一天線排列結構實施例的平面圖。 10 201140688 第4圖所示之天線4〇,包括中央天線41，和周圍天線 45’，其面朝方向與第3圖實施例之中央天線41和周圍 天線45的面朝方向相反。 母周圍天線45’包括二個分支天線45a，其從單—導 線分岔。故四對周圍天線45’按螺旋形式排列在四個周園 視窗30B上。 接著，將參照第5至10圖說明供應及注入處理氣體至 基材處理設備的結構，且基材處理設備設有具上述結構 之蓋框架20。 在一實施例中，喷淋頭61(參照第7圖）設於分隔框架 25的部分，其内定義中央視窗30A而使處理氣體從噴淋 頭61注入到腔室内。換言之，中央視窗3〇a具有矩形結 構，由此注入處理氣體至腔室内的喷淋頭61設在各分隔 框架25上’其形成中央視窗30A的四邊。 第7圖為顯示蓋框架20之中央部分的顛倒透視圖。噴 淋頭6 1的結構將參照此圖式說明於下。 刀別δ又於形成中央視窗3〇A四邊之分隔框架乃上的嘴 淋頭61包括規則排列的複數個注入孔62&。在第7圖之 實施例中，喷淋頭61配置成使處理氣體從中央視窗30A 的四邊、而非從中央視窗3〇A的角落注入到腔室。 較佳地，喷淋頭61具有凹槽63(參照第ό圖），其形成 於为隔框架25的下表面而使處理氣體通過凹槽〇、以 及喷淋頭平板62 ’其内含注入孔62a並將凹槽63的外 側輕接至分隔框架2 5。 201140688 :1 2 3 4 5 6 7 8至10圖為顯示設有噴淋頭平板62之分隔框架25 Z面圖。嘴淋頭61的數個注入結構實施例將參照這些 圖式說明於下。 的注入結構包括注入表面62b，其形成於分 下表面。:ita第8圖所示，注入表面㈣定位 ，注入孔62a則定位朝垂直方向。 噴淋頭6 1 隔框架25的 朝水平方向 另外，如第9圖所示，注入表面心，可呈半圓形或半 橢圓形’ U孔62a’按徑向散佈形式形成於圓形注入表 面62b。圓形注入表自㈣，和徑向注入孔仏，形成簡易 2，其可有效地將處理氣體均句分配至腔室中，進而 提兩基材處理操作的效率。 如第9圖所示，注入表面62b”不僅可形成於 分隔框架25的下表面’其還可形成在分隔框架25的二 側邊’且可形成注人孔62a，，使之貫穿下表面和分隔框架 6 1的結構將參照包括第5及6 其可具體實施成具上述結構的 12 1 5的對應側邊。在此例中’側邊注入孔6 2 a，，最好配置成 2 使從側邊注人1 62a ”排放的處理氣體注人至中央視窗 3 30A。 4 供應處理氣體至嘴淋頭 5 圖之相關圖式說明於下， 6 數個實施例。 7 處理氣體供應結構可以各種方式體現。在—實施例 8 中，氣體入口 64(參照第6圖）形成在分隔框架乃鄰接中 9 央視窗3〇A四角的位置。氣體入口管65垂直耦接分 架25具氣體入口 64的上表面。 王 201140688 處理氣體供應結構可配置成使經由各氣體入口管65 供應的氣體以中央視窗30A的對應角落為起點沿著形成 於對應分隔框架25的流動通道單向或雙向流動。在處理 氣體供應結構配置成使氣體雙向流動的例子中，阻隔牆 設於凹槽63的内部，其在中央視窗3〇A的對應側邊構成 流動通道。 由於氣體入口管65設置環繞中央視窗30A的四角，故 處理氣體供應結構的形成不會妨礙支托絕緣板31的支 架26或29 。 元件符號65a、65b代表氣體入口管65的凸緣 (flange)。上凸緣65a固定在設於腔室上方的上蓋結構， 下凸緣65b固定於蓋框架2〇。 在此實施例中’四個氣體入口管65設置環繞中央視窗 30A。參照第5圖，用於供應氣體至四個入口管65的單 一氣體供應管66a分岔成二個第一供應管66b。每一第 一供應管66b分岔成二個第二供應管66c。第二供應管 66c連接各氣體入口管65。 同時’雖然喷淋頭61乃描繪成呈矩形排列，但本發明 不限於此°視蓋框架20的結構而定，可以各種方式修改 噴淋頭61的排列，例如，其可呈八邊形或六邊形排列。 接著’將參照第11至14圖說明冷卻天線40的結構和 加熱絕緣板3 1的結構。 加熱絕緣板3 1的結構包括加熱管71，其排放加熱空 氣至絕緣板3 1上。 13 201140688 加熱管7 1乃设计成適合均勻加熱絕緣板3丨的排列方 式。必要時可適當修改加熱管71的排列方式，只要其能 均勻加熱絕緣板3 1。在這些圖式之實施例中，二個加熱 B線叹於每一周圍視窗3〇B。置於中央視窗3〇A的絕緣 板31由從周圍視窗30B延伸的加熱管線加熱。加熱管線 包含加熱管71，其朝水平方向排列在視窗上且具有定向 朝向視窗的流出孔。 虽然，加熱管7 1可設置得比排在視窗上的天線低或 高’以免互相干擾。 如第11圖所示，加熱管線71a連接各加熱管71之間。 在此例中，每一加熱管線71a包含直徑小於加熱管71直 控的管子。或者’可不設加熱管線7ia。 如此，由於本發明之設備設有加熱絕緣板3丨的加熱管 7 1 ’故可減少聚合物沉積至絕緣板3 1上。 供應加熱空氣至加熱管71的方法可由各種結構具體 施行，例如，把加熱空氣供應管線與之連接。在此實施 例中，使用渦漩產生器73。此將參照第12圖說明於後。 如第14圖所示，在冷卻天線40的結構中，各天線4〇、 41、45呈中空管狀’冷卻流體流過管狀天線4〇，以冷卻 天線40。 在此實施例中，冷卻路徑乃配置成使冷卻流體經由天 線40的開始端汲入天線40，接著經由其尾端排出天線 4 0。沿者天線4 0流動的冷卻流體迴路構造可利用熟知技 術具體實施，故不再進一步加以說明。 14 201140688 在本發明之一實施例中， 、邑緣板的加熱和夭绩的卢浴口 可由渦漩產生器73—起體招l …和天線的冷卻 起體現。此將詳述於下。 渦漩產生器73為能量 e ^ ^ ^ 嘥哀1其疋利用圓管和具簡 易結構的喷嘴、而未利用 两心而β八丄、 1』化予作用或燃燒作用，將 坠縮工氣刀成低溫空氣和田六 工氣。如第12圖所示，壓 縮空氣經由供應管供應至 〇吕接者，供應至渦管74 的壓縮空氣主要進入渦旋 疋腔至75並以超高速旋轉。旋轉 空氣流向加熱空氣出口。此 木 匕時 备次要渦流通過主要渦 心㈣M 要㈣將損失熱量及流向冷卻空氣 在此一氣机中’内部氣流的空氣粒子循環一週所 費的時間和外部氣流的Μ粒子—樣，故内部氣流的移 動速度比外部氣流慢。移動速度不同意味著動能減少。 損失的動能會轉換成熱量，以致提高外部氣流的溫度， 又進一步降低内部氣流的溫度。 加熱管71和天線40的冷卻路徑分別連接渦漩產生器 73的兩端。如此，加熱絕緣板31與冷卻天線4〇的結構 同時可由此簡易結構體現。 同時，雖然渦璇產生器乃描繪成做為提供加熱空氣和 冷卻工氣的裝置，但此裝置不限於渦璇產生器。可採用 具另一結構的冷卻器，也可個別提供用來供應加熱空氣 的裝置和用來供應冷卻空氣的裝置。 接著’將參照第1 5至19圖說明基材處理設備的能量 損失減少結構’其能盡量減少腔室内面周圍的能量損失 及確保電漿的均勻性。 15 201140688 如第15及ι6圖所示，襯墊保護件81安裝在腔室ι〇 的牆壁内面。各襯墊保護件81緊密接觸對應角落和對應 腔室壁。 第15圖繪示襯墊保護件8 1，其設於蓋框架2〇之外框 架的内面（第1圖的W部分）’且其各自從蓋框架20的對 應角落延伸到外框架的二相鄰内面。 第16圖繪示當分隔框架25(參見第2圖等）不設在蓋框 架20内或襯墊保護件81位於腔室1〇的外殼、而非蓋框 架20的周圍時，襯墊保護件81的安裝情形。襯墊保護 件81為亦稱襯墊或保護件的元件。襯墊保護件8 1包括 各自呈L形且安裝在腔室1〇之對應角落的角落保護件 82、和各具平面形狀且安裝在腔室1〇之對應壁面的壁面 保護件8 3。 襯墊保護件81是藉由陽極處理鋁板的表面而形成。 另外，在第16圖之實施例中，只有襯墊保護件81的 角落保護件82是由陽極處理鋁板表面形成。在此例中， 壁面保護件83由陶瓷塗佈板組成。 在此實施例中，相互組裝之各角落保護件82的邊緣和 相鄰壁面保護件83的對應邊緣具有梯狀結構，其互相嚙 合使角^保護件82與壁面保護件83二者間的接面在腔 室壁面上齊平。 如第17圖之「C」部分所示，角落保護件82在其内角 處具有相對腔室壁面傾斜的表面。 在根據本發明之能量損失減少結構中，孔洞Μ形成穿 16 201140688 過^應角落保護# 82後面的腔室壁面各角落。電容n 85安裝於孔洞12中且電氣連接對應角^•保護件82。電 谷器85連接外部電路或接地。 如第15至17圖所示’單-電容器85可插穿腔室1〇 的壁面角落，並且連接至角落保護件82的背面。在此例 中，供電容器85插入的孔洞12朝對角線方向形成貫穿 腔室10的壁面角落。 或者，如第18圖所示，複數個電容器85設置圍繞腔 室10各角落。在此例中，電容器85可插穿腔室1〇之角 落對側的各壁面，並且連接至角落保護件82的背面。當 然，孔洞12形成貫穿腔室1〇之角落對側的壁面，使電 容器8 5經由各孔洞12插入壁面。 雖然圖未顯示，但密封構件（未繪示）最好設置來密封 腔至10供對應電容器85插入的各孔洞12。 電容器85利用螺紋耦接法耦接對應角落保護件82 ^ 為此’凸座（b〇ss)84從角落保護件82的背面突出。外部 螺紋部86設於電容器85的末端。外部螺紋部％旋入凸 座84。另外，凸座凹槽13形成於孔洞12中，使得每一 電容器85的凸座84插入對應凸座凹槽I〗。 襯墊保護件81、凸座84、螺紋部86、電容器Μ和連 接電容器85的外部電路彼此電氣相連。 較佳地，支撐蓋88安裝在腔室1〇的壁面外面，以支 撐對應電容器85。支撐蓋88可以各種方式體現，只要 其能支撐插入孔洞12的對應電容器 17 201140688 電容器85包含真空可變電容器。真空可變電容器具已 知結構，故不再詳述於此。較佳地，在本發明中，真空 可變電容器配置成使電容器的電容是藉由調整（如旋轉） 設於腔室外的電容控制裝置89而控制。 控制電容器之電容的理由在於，當電容器85的電容經 控制以回應腔室10内的電漿產生條件時，可最佳化能量 損失減少結構的效率。 如第19圖所示’在基材處理設備缺少本發明之能量損 失減少結構的例Α中，腔室1〇之壁面與角落周圍的電位 近乎為零。然在設有如本發明實施例之襯墊保護件8丨與 電容器85的例B中，腔室1〇之角落周圍的電位顯著提 高至零以上。 故在本發明中，如第19圖之例B所示，整體腔室1〇 的電位差已降至最低，如此腔室1〇内可更均勻地產生電 漿》特別地，如圖中的” Κ”部分所示，可減少腔室壁面上 的能量損失。省下的能量全可用來產生電漿。因此，可 提同如具本發明之能量損失減少結構的沉積設備或蝕刻 設備的效率。 同時，具上述特徵之本發明可應用到所有使用電漿的 基材處理设備類型。例如，本發明可用於乾蝕刻機、化 學氣相沉積設備等。 如上所述，在根據本發明之具有視窗加熱結構的基材 處理設備中’加熱空氣供應至視窗上，而以排放加熱空 氣至視窗上的方式加熱視窗。故本發明可防止腔室内的 18 201140688 副產物沉積於視窗，進而加強設備的可靠度。 另外，在本發明中，單一裝置可同時加熱視窗及冷卻 天線，藉此儘管是具簡易結構，也可增強設備的性能。 本發明實施例所述之技術本意可獨立或結合實行。雖 然本發明特別以示例實施例揭露如上，然應理解一般技 藝人士在不脫離本發明之精神或範圍内，當可作各種型 式與細或之更動。因此，本發明之精神或保護範圍須視 後附申請專利範圍所界定者為準。 【圖式簡單說明】 第1圖為顯示根據本發明之基材處理設備構造的概略 截面圖； 第2圖為根據本發明之基材處理設備的蓋框架的透視 fgTI · 圖， 第3圖$顯示根據本發明一實施，基材處理設備之 蓋框架上的天線排列結構的平面圖； 第4圖為顯示根據本發明另—實施例，基材處理設備 之蓋框架上的天線排列結構的平面圖； 第5圖為蓋框架上部之關鍵部分的透視圖’其顯示根 據本發月之基材處理設備的處理氣體供應結構； 第6圖為沿著第5圖Α_α線截切的截面透視圖； 第7圖為中央視窗的顛倒透視圖，其顯示根據本發明 之基材處理設備的處理氣體注入結構； 19 201140688 第8至ι〇圖為顯示根據本發明數個實施例之基材處理 設備的處理氣體注入結構的截面圖； 第11圖為顯不根據本發明之基材處理設備的天線冷 卻結構和絕緣板加熱結構的平面圖； 第12圖為顯不根據本發明之渦漩產生器的截面圖，用 於冷卻天線及加熱絕緣板； 第13圖為沿著第11圖線截切的截面圖； 第14圖為根據本發明之天線的截面圖； 第 圖為顯示根據本發明之一結構實施例的平面 圖’用於減少基材處理設備中的*量損失； 第16圖為顯示根據本發明之另一結構實施例的平面 圖，用於減少基材處理設備中的能量損失； 第17圖為第16圖關鍵部分的放大圖； 第18圖為對應第17圖的放大圖，但顯示另一實施例； 以及 第19圖為根據本發明之參考視圖，其繪示用於減少能 量損失之結構的作用。 【主要元件符號說明】 10 腔室 11 外殼 12 孔洞 13 凹槽 15 支撐臺 17 電極 20 蓋框架 21 外框架 20 201140688 22 支撐件 24a 通道 25 分隔框架 28 托架 30、 3 0A、3 0B 視窗 40 ' 4(T、41、41 ，、45 、 4 50 電源供應器 61 喷淋頭 62a 、62a’ ' 62a，， 注入孔 63 凹槽 65 入口管 66a 、66b ' 66c 供應管 71a 加熱管線 74 渦管 81 ' 82 > 83 保 護件 85 電容器 88 支撐蓋 301 -304 視窗 405 支撐件 a-d 、a’ 側邊 S 基材 23、26、29 支架 24b 短管 27 凹槽 28a 插孔 3 1 絕緣板 45’、45a 天線 60 供應單元 62 喷淋頭平板 62b、62b，、62b，， 表面 64 入口 65a > 65b 凸緣 71 加熱管 73 渦漩產生器 75 渦旋腔室 84 凸座 86 螺紋部 89 電容控制裝置 401 部分 451-454 天線 C、K、W 部分 21Jw Zhou Gushui is 3〇4. The second surrounding antenna 452 extends in a clockwise direction via the third surrounding window 3. 3 > The fourth surrounding window 304 extends from the second surrounding window 3G2 to the first surrounding window. The beginning end of the second surrounding antenna 452 is located within the first surrounding antenna 45i. The third surrounding antenna 453 and the fourth surrounding antenna 454 are arranged in the same manner as the first surrounding antenna 451 and the second surrounding day, line 452. Therefore, on the whole, the four surrounding antennas 45 are regularly arranged in a spiral shape and are equidistant from each other. The symbol 401 in the figure represents a portion in which the center antenna 41 or each of the surrounding antennas 45 is introduced. The symbol 4 〇 5 represents an end support which is provided at a position where the center antenna 41 or each of the surrounding antennas 45 extends, so that the corresponding antenna 40 is connected to the ground portion via the end support. Preferably, two antenna insertion holes 28a are formed in each of the antenna fixing brackets 28 such that the three surrounding antennas 45 passing through the corresponding partition frame 25 are inserted into the respective antenna insertion holes 28a. The antenna holder 29 (refer to Fig. 2) is coupled to the upper portion of the antenna fixing bracket 28 such that the surrounding antenna 45 is firmly fixed to the antenna fixing bracket 28. In the above arrangement of the cover frame 20 and the antenna 4A provided by the present invention, the direction in which the plasma is generated in the chamber is related to the structure in which the surrounding window and the antenna are arranged around the central window of the cover frame. Therefore, during the substrate processing operation, not only the central portion of the chamber but also the plasma density is uniformly formed around the chamber. In addition, eddy currents are generated around the partition frame 25, so that the plasma can be distributed more evenly. Thus, the processing performance can be remarkably improved due to the arrangement of the above-described cover frame 2〇 and the antenna 4〇. Fig. 4 is a plan view showing an embodiment of another antenna array structure. 10 201140688 The antenna 4 shown in Fig. 4 includes a center antenna 41 and a surrounding antenna 45' whose facing directions are opposite to the facing directions of the center antenna 41 and the surrounding antenna 45 of the Fig. 3 embodiment. The mother surrounding antenna 45' includes two branch antennas 45a which are branched from the single-wire. Therefore, the four pairs of surrounding antennas 45' are arranged in a spiral form on the four peripheral garden windows 30B. Next, the structure for supplying and injecting the processing gas to the substrate processing apparatus will be described with reference to Figs. 5 to 10, and the substrate processing apparatus is provided with the cover frame 20 having the above structure. In one embodiment, the shower head 61 (see Fig. 7) is provided in a portion of the partition frame 25, and a central window 30A is defined therein to inject a process gas from the shower head 61 into the chamber. In other words, the center window 3a has a rectangular structure, whereby the shower head 61 injecting the process gas into the chamber is provided on each of the partition frames 25, which form the four sides of the center window 30A. Fig. 7 is an inverted perspective view showing the central portion of the cover frame 20. The structure of the shower head 61 will be described below with reference to this figure. The knife δ is further formed on the partition frame on the four sides of the central window 3A. The shower head 61 includes a plurality of injection holes 62& In the embodiment of Fig. 7, the shower head 61 is configured to inject the process gas from the four sides of the center window 30A, rather than from the corners of the center window 3A, into the chamber. Preferably, the shower head 61 has a recess 63 (refer to the first drawing) formed on the lower surface of the partition frame 25 to pass the process gas through the recess 〇, and the shower head flat plate 62' containing the injection hole 62a and the outer side of the groove 63 is lightly connected to the partition frame 25. 201140688: 1 2 3 4 5 6 7 8 to 10 is a Z-side view showing the partition frame 25 provided with the shower head plate 62. A number of injection structure embodiments of the nozzles 61 will be described below with reference to these figures. The implant structure includes an implant surface 62b formed on the split surface. :ita Figure 8 shows that the injection surface (4) is positioned, and the injection hole 62a is positioned in the vertical direction. In addition, as shown in FIG. 9, the shower head 6 1 is inserted into the surface center, and may be semicircular or semi-elliptical. The U hole 62a' is formed in a radial dispersion form on the circular injection surface. 62b. The circular injection table from (4), and the radial injection hole, form a simple 2, which can effectively distribute the process gas into the chamber, thereby improving the efficiency of the two substrate processing operations. As shown in Fig. 9, the injection surface 62b" can be formed not only on the lower surface of the partition frame 25 but also on the two side edges of the partition frame 25 and can form the injection hole 62a so as to penetrate the lower surface and The structure of the partition frame 6 1 will be referred to the corresponding side of the 12 15 which may be embodied as the above structure, in the fifth and sixth embodiments. In this example, the side injection hole 6 2 a, preferably configured as 2 From the side, the injection of 1 62a ” of the process gas is injected into the central window 3 30A. 4 Supply of process gas to the mouth sprinkler 5 The relevant diagram of the figure is illustrated below, 6 several examples. 7 The process gas supply structure can be embodied in a variety of ways. In the eighth embodiment, the gas inlet 64 (refer to Fig. 6) is formed at a position where the partition frame is adjacent to the four corners of the central window 3A. The gas inlet pipe 65 is vertically coupled to the upper surface of the manifold 25 having the gas inlet 64. The king 201140688 process gas supply structure may be configured such that the gas supplied through each of the gas inlet pipes 65 flows in a one-way or two-way flow along the flow passage formed in the corresponding partition frame 25 with the corresponding corner of the center window 30A as a starting point. In the example where the process gas supply structure is configured to flow the gas in both directions, the barrier wall is disposed inside the recess 63 and defines a flow passage at a corresponding side of the center window 3A. Since the gas inlet pipe 65 is disposed around the four corners of the center window 30A, the formation of the process gas supply structure does not hinder the support 26 or 29 of the support insulating plate 31. The component symbols 65a, 65b represent flanges of the gas inlet pipe 65. The upper flange 65a is fixed to the upper cover structure provided above the chamber, and the lower flange 65b is fixed to the cover frame 2''. In this embodiment, 'four gas inlet tubes 65' are disposed around the central window 30A. Referring to Fig. 5, a single gas supply pipe 66a for supplying gas to the four inlet pipes 65 is branched into two first supply pipes 66b. Each of the first supply pipes 66b is branched into two second supply pipes 66c. The second supply pipe 66c is connected to each of the gas inlet pipes 65. Meanwhile, although the shower head 61 is depicted as being arranged in a rectangular shape, the present invention is not limited thereto. The arrangement of the shower head 61 may be modified in various ways, for example, it may be octagonal or Hexagon arrangement. Next, the structure of the cooling antenna 40 and the structure of the heating insulating plate 31 will be described with reference to Figs. 11 to 14. The structure of the heating insulating plate 31 includes a heating pipe 71 which discharges heating air to the insulating plate 31. 13 201140688 The heating tube 7 1 is designed to be suitable for uniformly heating the insulating plate 3丨. The arrangement of the heating tubes 71 can be appropriately modified as necessary, as long as it can uniformly heat the insulating sheets 31. In the embodiment of these figures, the two heating B lines sigh at each of the surrounding windows 3〇B. The insulating plate 31 placed in the center window 3A is heated by a heating line extending from the peripheral window 30B. The heating line includes a heating tube 71 which is arranged horizontally on the window and has an outflow opening oriented toward the window. Although the heating tubes 71 may be placed lower or higher than the antennas arranged on the window to avoid mutual interference. As shown in Fig. 11, the heating line 71a is connected between the heating pipes 71. In this example, each heating line 71a includes a tube having a diameter smaller than that of the heating tube 71. Alternatively, the heating line 7ia may not be provided. Thus, since the apparatus of the present invention is provided with a heating tube 7 1 ' for heating the insulating sheet 3', the deposition of polymer onto the insulating sheet 31 can be reduced. The method of supplying heated air to the heating pipe 71 can be carried out by various structures, for example, by connecting a heated air supply line thereto. In this embodiment, a vortex generator 73 is used. This will be explained later with reference to Fig. 12. As shown in Fig. 14, in the structure of the cooling antenna 40, each of the antennas 4, 41, 45 has a hollow tubular 'cooling fluid flowing through the tubular antenna 4' to cool the antenna 40. In this embodiment, the cooling path is configured such that the cooling fluid is drawn into the antenna 40 via the beginning of the antenna 40 and then the antenna 40 is exhausted via its trailing end. The configuration of the cooling fluid circuit along which the antenna 40 flows can be embodied by well-known techniques and will not be further described. 14 201140688 In an embodiment of the invention, the heating and performance of the rim flange can be represented by the vortex generator 73, and the cooling of the antenna. This will be detailed below. The vortex generator 73 is an energy e ^ ^ ^ 嘥 1 1 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋The knife is made into low temperature air and Tianliu. As shown in Fig. 12, the compressed air is supplied to the crucible via the supply pipe, and the compressed air supplied to the scroll 74 mainly enters the vortex chamber to 75 and is rotated at an ultra high speed. The rotating air flows to the heated air outlet. The raft is required to vortex through the main vortex (4) M (4) to lose heat and flow to the cooling air. In this air machine, the time spent circulating the air particles of the internal airflow and the enthalpy particles of the external airflow are internal. The airflow moves at a slower rate than the external airflow. The difference in moving speed means that the kinetic energy is reduced. The lost kinetic energy is converted into heat, which increases the temperature of the external air stream and further reduces the temperature of the internal air stream. The cooling paths of the heating tube 71 and the antenna 40 are respectively connected to both ends of the vortex generator 73. Thus, the structure of the heating insulating plate 31 and the cooling antenna 4A can be simultaneously embodied by the simple structure. Meanwhile, although the vortex generator is depicted as a means for providing heated air and cooling process gas, the device is not limited to the vortex generator. A cooler having another structure may be employed, or a means for supplying heated air and a means for supplying cooling air may be separately provided. Next, the energy loss reducing structure of the substrate processing apparatus will be described with reference to Figs. 15 to 19, which can minimize the energy loss around the inside of the chamber and ensure the uniformity of the plasma. 15 201140688 As shown in Figures 15 and ι6, the pad protector 81 is mounted on the inner surface of the wall of the chamber ι. Each pad protector 81 closely contacts the corresponding corner and the corresponding chamber wall. Figure 15 illustrates the pad protector 801 disposed on the inner face of the frame outside the cover frame 2 (the W portion of Figure 1) and each extending from the corresponding corner of the cover frame 20 to the second phase of the outer frame Neighborhood side. FIG. 16 illustrates the spacer protector when the partition frame 25 (see FIG. 2, etc.) is not disposed in the cover frame 20 or the pad protector 81 is located around the outer casing of the chamber 1〇 instead of the cover frame 20. 81 installation situation. The pad protector 81 is an element also known as a pad or protector. The pad guard 8 1 includes a corner protector 82 each having an L shape and mounted at a corresponding corner of the chamber 1 , and a wall protector 83 having a planar shape and mounted on a corresponding wall of the chamber 1〇. The pad protector 81 is formed by anodizing the surface of the aluminum plate. Further, in the embodiment of Fig. 16, only the corner protector 82 of the pad protector 81 is formed by the surface of the anodized aluminum plate. In this example, the wall protector 83 is composed of a ceramic coated plate. In this embodiment, the edges of the mutually assembled corner protectors 82 and the corresponding edges of the adjacent wall protectors 83 have a ladder-like structure that engages each other such that the corner protector 82 and the wall protector 83 are connected. The face is flush on the wall of the chamber. As shown in the "C" portion of Fig. 17, the corner protector 82 has a surface inclined at its inner corner with respect to the wall surface of the chamber. In the energy loss reduction structure according to the present invention, the holes are formed in various corners of the chamber wall behind the corner protection #82. A capacitor n 85 is mounted in the hole 12 and electrically connected to the corresponding corner ^•protector 82. The grid 85 is connected to an external circuit or to ground. As shown in Figs. 15 to 17, the 'single-capacitor 85 can be inserted through the wall corner of the chamber 1 , and connected to the back surface of the corner protector 82. In this example, the hole 12 into which the power supply container 85 is inserted forms a corner of the wall surface penetrating the chamber 10 in the diagonal direction. Alternatively, as shown in Fig. 18, a plurality of capacitors 85 are disposed around corners of the chamber 10. In this case, the capacitor 85 can be inserted through the respective wall faces of the opposite corners of the chamber 1 and connected to the back surface of the corner protector 82. Of course, the holes 12 form wall faces penetrating the corners of the corners of the chambers 1 to allow the capacitors 85 to be inserted into the wall via the holes 12. Although not shown, a sealing member (not shown) is preferably provided to seal the cavity to 10 for each of the holes 12 into which the corresponding capacitor 85 is inserted. The capacitor 85 is coupled to the corresponding corner protector 82 by a screw coupling method. For this reason, a boss (b〇ss) 84 protrudes from the back surface of the corner protector 82. The external thread portion 86 is provided at the end of the capacitor 85. The outer thread portion % is screwed into the boss 84. Further, a boss recess 13 is formed in the hole 12 such that the boss 84 of each capacitor 85 is inserted into the corresponding boss recess I. The pad protector 81, the boss 84, the screw portion 86, the capacitor Μ, and the external circuit of the connection capacitor 85 are electrically connected to each other. Preferably, the support cover 88 is mounted outside the wall surface of the chamber 1 to support the corresponding capacitor 85. The support cover 88 can be embodied in a variety of ways as long as it can support a corresponding capacitor inserted into the hole 12 201140688 The capacitor 85 comprises a vacuum variable capacitor. Vacuum variable capacitors have known structures and will not be described in detail herein. Preferably, in the present invention, the vacuum variable capacitor is configured such that the capacitance of the capacitor is controlled by adjusting (e.g., rotating) the capacitance control device 89 disposed outside the chamber. The reason for controlling the capacitance of the capacitor is that the efficiency of the energy loss reduction structure can be optimized when the capacitance of the capacitor 85 is controlled in response to the plasma generation conditions within the chamber 10. As shown in Fig. 19, in the case where the substrate processing apparatus lacks the energy loss reducing structure of the present invention, the potential around the wall surface and the corner of the chamber 1 is almost zero. However, in the example B provided with the pad protector 8A and the capacitor 85 as in the embodiment of the present invention, the potential around the corner of the chamber 1 is significantly increased above zero. Therefore, in the present invention, as shown in the example B of Fig. 19, the potential difference of the entire chamber 1 已 has been minimized, so that the plasma can be more uniformly generated in the chamber 1 特别" particularly, as shown in the figure" As shown in the section, the energy loss on the wall of the chamber can be reduced. The energy saved can be used to generate plasma. Therefore, the efficiency of the deposition apparatus or etching apparatus such as the energy loss reducing structure of the present invention can be improved. Meanwhile, the present invention having the above characteristics can be applied to all types of substrate processing apparatuses using plasma. For example, the present invention can be applied to a dry etching machine, a chemical vapor deposition apparatus, or the like. As described above, in the substrate processing apparatus having the window heating structure according to the present invention, "heating air is supplied to the window, and the window is heated in such a manner as to discharge the heating air to the window. Therefore, the present invention can prevent the deposition of 18 201140688 by-products in the chamber in the window, thereby enhancing the reliability of the device. Further, in the present invention, a single device can simultaneously heat the window and the cooling antenna, thereby enhancing the performance of the device despite the simple structure. The techniques described in the embodiments of the present invention are intended to be implemented independently or in combination. While the invention has been described in detail with reference to the preferred embodiments of the present invention, it will be understood that Therefore, the spirit or scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing the construction of a substrate processing apparatus according to the present invention; Fig. 2 is a perspective fgTI of a cover frame of a substrate processing apparatus according to the present invention, Fig. 3, Fig. 3 A plan view showing an antenna array structure on a cover frame of a substrate processing apparatus according to an embodiment of the present invention; and a fourth plan view showing an antenna array structure on a cover frame of a substrate processing apparatus according to another embodiment of the present invention; Figure 5 is a perspective view of a key portion of the upper portion of the cover frame, which shows a process gas supply structure of the substrate processing apparatus according to the present month; Figure 6 is a cross-sectional perspective view taken along line 第_α of Figure 5; 7 is an inverted perspective view of a central window showing a process gas injection structure of a substrate processing apparatus according to the present invention; 19 201140688 8th to ι〇 diagrams showing processing of a substrate processing apparatus according to several embodiments of the present invention FIG. 11 is a plan view showing an antenna cooling structure and an insulating plate heating structure of a substrate processing apparatus according to the present invention; FIG. 12 is a view showing a root A cross-sectional view of a vortex generator of the present invention for cooling an antenna and a heating insulating plate; a third sectional view taken along line 11; and a cross-sectional view of the antenna according to the present invention; The drawing shows a plan view 'for reducing the amount of loss in the substrate processing apparatus according to an embodiment of the present invention; FIG. 16 is a plan view showing another structural embodiment according to the present invention for reducing substrate processing. Energy loss in the device; Fig. 17 is an enlarged view of a key portion of Fig. 16; Fig. 18 is an enlarged view corresponding to Fig. 17, but showing another embodiment; and Fig. 19 is a reference view according to the present invention, It illustrates the role of the structure for reducing energy loss. [Main component symbol description] 10 Chamber 11 Housing 12 Hole 13 Groove 15 Support table 17 Electrode 20 Cover frame 21 Outer frame 20 201140688 22 Support 24a Channel 25 Separation frame 28 Bracket 30, 3 0A, 3 0B Window 40 ' 4 (T, 41, 41, 45, 4 50 power supply 61 sprinkler 62a, 62a' '62a,, injection hole 63 groove 65 inlet pipe 66a, 66b ' 66c supply pipe 71a heating pipe 74 scroll 81 ' 82 > 83 Protector 85 Capacitor 88 Support cover 301 -304 Window 405 Support ad a, Side S Substrate 23, 26, 29 Bracket 24b Short tube 27 Groove 28a Jack 3 1 Insulation board 45', 45a Antenna 60 Supply unit 62 Sprinkler plate 62b, 62b, 62b, Surface 64 Inlet 65a > 65b Flange 71 Heating tube 73 Vortex generator 75 Vortex chamber 84 Relief 86 Threaded portion 89 Capacitance control device 401 Part 451-454 Antenna C, K, W Part 21