TWI424495B - Substrate processing apparatus having window heating structure - Google Patents

Substrate processing apparatus having window heating structure Download PDF

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Publication number
TWI424495B
TWI424495B TW099147393A TW99147393A TWI424495B TW I424495 B TWI424495 B TW I424495B TW 099147393 A TW099147393 A TW 099147393A TW 99147393 A TW99147393 A TW 99147393A TW I424495 B TWI424495 B TW I424495B
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window
antenna
chamber
substrate processing
surrounding
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TW099147393A
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TW201140688A (en
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Hyoung Kyu Son
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Lig Adp Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119Windows
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32522Temperature
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645Radiofrequency discharges
    • H05H1/4652Radiofrequency discharges using inductive coupling means, e.g. coils

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)

Description

具有視窗加熱結構的基材處理設備Substrate processing equipment with window heating structure

本發明是關於基材處理設備,其在腔室內產生電漿來處理基材表面。This invention relates to a substrate processing apparatus that produces a plasma within a chamber to treat a surface of a substrate.

如同此技藝所熟知,製造諸如大型積體電路(LSI)或平面顯示器(FPD)等電子裝置通常會歷經如真空處理基材般的處理。As is well known in the art, the manufacture of electronic devices such as large integrated circuits (LSIs) or flat panel displays (FPDs) typically undergoes processing as a vacuum treated substrate.

在真空處理方法中,氣體供應至腔室,然後經高壓放電產生電漿。電漿粒子的加速力把物質物理性濺射到基材。基材上的物質則由電漿自由基化學性分解。In the vacuum processing method, gas is supplied to the chamber, and then plasma is generated by high voltage discharge. The acceleration force of the plasma particles physically sputters the material onto the substrate. The substance on the substrate is chemically decomposed by plasma radicals.

利用電漿處理基材的技術依據形成電漿的方法分為電漿蝕刻(PE)技術、反應離子蝕刻(RIE)技術、磁場強化反應離子蝕刻(MERIE)技術、電子迴旋加速共振(ECR)技術、變壓耦合電漿(TCP)技術、感應耦合電漿(ICP)技術等。The technology of plasma treatment of substrates is divided into plasma etching (PE) technology, reactive ion etching (RIE) technology, magnetic field enhanced reactive ion etching (MERIE) technology, and electron cyclotron resonance (ECR) technology. , transformer-coupled plasma (TCP) technology, inductively coupled plasma (ICP) technology.

特別地,形成高密度電漿及增進玻璃(或半導體)基材上之電漿密度均勻性將大大影響沉積或蝕刻性能。為達成這些目的,已開發各種產生電漿的方法。感應耦合電漿(ICP)法為電漿產生方法的一代表例。In particular, the formation of high density plasma and enhanced plasma density uniformity on glass (or semiconductor) substrates will greatly affect deposition or etch performance. To achieve these goals, various methods of producing plasma have been developed. Inductively coupled plasma (ICP) is a representative example of plasma generation methods.

ICP法為產生高密度電漿的方法,其依據原理為當線圈纏繞介電質以致電場改變時,線圈內將產生感應磁場,進而在反應腔室內形成二次感應電流。The ICP method is a method for producing high-density plasma. The principle is that when the coil is wound around the dielectric to change the field, an induced magnetic field is generated in the coil, and a secondary induced current is formed in the reaction chamber.

一般來說,利用ICP法之基材處理設備包括下電極,其設在反應腔室的下部。基材放在下電極上。設備更包括天線,其設在腔室內或耦接腔室外殼的蓋框架上。射頻(RF)功率施加至天線。基材表面是藉由供應反應氣體至腔室及產生電漿處理。Generally, a substrate processing apparatus using the ICP method includes a lower electrode disposed at a lower portion of a reaction chamber. The substrate is placed on the lower electrode. The apparatus further includes an antenna disposed within the chamber or coupled to the cover frame of the chamber housing. Radio frequency (RF) power is applied to the antenna. The surface of the substrate is treated by supplying a reactive gas to the chamber and generating a plasma.

然在基材處理設備的電漿處理操作中,蝕刻製程的副產物(如聚合物等)會沉積在陶瓷視窗的下部。若基材處理操作期間沉積副產物位移,則處理操作可能產生瑕疵。However, in the plasma processing operation of the substrate processing apparatus, by-products of the etching process (such as polymers, etc.) are deposited on the lower portion of the ceramic window. If the deposition by-products are displaced during the substrate processing operation, the processing operation may create defects.

為克服此問題,提出一方法,其將避免蝕刻期間形成之副產物沉積的蓋子安裝在陶瓷視窗前。但隨著平面顯示器等尺寸變大,腔室或視窗尺寸亦隨之增大。故在習知加熱方法中,很難有效防止副產物沉積於視窗。To overcome this problem, a method is proposed which installs a cover that avoids the deposition of by-products formed during etching in front of the ceramic window. However, as the size of the flat panel display becomes larger, the size of the chamber or window also increases. Therefore, in the conventional heating method, it is difficult to effectively prevent by-products from being deposited on the window.

應理解上述習知技術為本發明之發明人在推論本發明前或在推論本發明的過程所獲知的資訊,且當不意味著習知技術的結構在申請日前已眾所周知。It is to be understood that the above-described prior art is the information obtained by the inventors of the present invention prior to the inference of the present invention or the inference of the present invention, and does not mean that the structure of the prior art is well known before the filing date.

因此,本發明記取先前技術發生的上述問題,本發明之一目的為提供具有加熱視窗之結構的基材處理設備,其透過排放加熱空氣至視窗上的方式來加熱視窗,以防止副產物沉積於視窗,進而加強設備的可靠度。Accordingly, the present invention is directed to the above problems occurring in the prior art, and an object of the present invention is to provide a substrate processing apparatus having a structure for heating a window which heats a window by discharging heated air to a window to prevent deposition of by-products. Windows, which in turn enhances the reliability of the device.

本發明之另一目的為提供具有視窗加熱結構的基材處理設備,其配置成使單一裝置可同時加熱視窗及冷卻天線,藉此儘管是具簡易結構,也可增強設備的性能。Another object of the present invention is to provide a substrate processing apparatus having a window heating structure that is configured such that a single device can simultaneously heat the window and cool the antenna, thereby enhancing the performance of the device despite the simple structure.

為達成上述目的,本發明提供具有視窗加熱結構的基材處理設備,包含:一腔室,其內處理基材;一視窗,設在腔室的上部,以實現腔室的內部空間與天線之間的耦接,且視窗由絕緣材料組成;一加熱管,設於視窗上方,加熱管排放加熱空氣至視窗的上表面上而加熱視窗;以及用以供應加熱空氣至加熱管內的裝置。To achieve the above object, the present invention provides a substrate processing apparatus having a window heating structure, comprising: a chamber in which a substrate is processed; and a window disposed at an upper portion of the chamber to realize an internal space of the chamber and an antenna Coupling, and the window is composed of an insulating material; a heating tube is disposed above the window, the heating tube discharges heated air to the upper surface of the window to heat the window; and means for supplying heated air to the heating tube.

腔室包括腔室外殼和耦接腔室外殼上端的蓋框架。蓋框架包含外框架,其形成多邊形框架結構的周邊;以及分隔框架,其設於外框架內且互相耦接而將視窗分隔成複數個視窗。該等視窗可包括:中央視窗,其由分隔框架界定且位於蓋框架的中央部分上;以及圍繞中央視窗的複數個周圍視窗,周圍視窗彼此被分隔框架隔開。加熱管可同時加熱中央視窗和周圍視窗。The chamber includes a chamber housing and a cover frame that couples the upper end of the chamber housing. The cover frame includes an outer frame that forms a perimeter of the polygonal frame structure, and a divider frame that is disposed within the outer frame and coupled to each other to divide the window into a plurality of windows. The windows may include a central window defined by the dividing frame and located on a central portion of the cover frame, and a plurality of surrounding windows surrounding the central window, the surrounding windows being separated from each other by a dividing frame. The heating tube heats the central window and the surrounding window at the same time.

加熱管可朝水平方向排列在視窗上方。複數個注入孔形成於加熱管中。注入孔定向朝向視窗。The heating tubes can be arranged horizontally above the window. A plurality of injection holes are formed in the heating tube. The injection holes are oriented towards the window.

該裝置包含渦漩產生器,其同時產生加熱空氣和冷卻空氣。The device includes a vortex generator that produces both heated air and cooling air.

另外,冷卻通道可形成於天線中,使得冷卻流體沿著天線流過冷卻通道。從該裝置產生的冷卻空氣供應至天線的冷卻通道內,以冷卻天線。Additionally, a cooling passage may be formed in the antenna such that the cooling fluid flows through the cooling passage along the antenna. Cooling air generated from the device is supplied into the cooling passage of the antenna to cool the antenna.

本發明之上述關鍵技術解決方式在配合參閱詳細說明與所附圖式後,將變得更清楚易懂,並將提出及解釋根據本發明之其它技術解決方式。The above-mentioned key technical solutions of the present invention will become more apparent and understood after the detailed description and the accompanying drawings, and other technical solutions according to the present invention will be proposed and explained.

本發明之較佳實施例將參照所附圖式詳述於下。Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

現請參照圖式,其中各圖中相同的元件符號用來表示相同或相仿的部件。Reference is now made to the drawings in which like reference

第1圖為顯示根據本發明一實施例之基材處理設備構造的概略截面圖。Fig. 1 is a schematic cross-sectional view showing the configuration of a substrate processing apparatus according to an embodiment of the present invention.

根據本發明之基材處理設備包括腔室外殼11、基材支撐臺15、下電極17、蓋框架20、複數個視窗30、天線40、射頻(RF)電源供應器50和處理氣體供應單元60。基材支撐臺15和下電極17設於腔室外殼11,基材S放在基材支撐臺15和下電極17上。蓋框架20耦接腔室外殼11的上端。視窗30設於蓋框架20中。天線40和RF電源供應器50位於視窗30上。處理氣體供應單元60供應處理氣體至腔室10中,其是由腔室外殼11和蓋框架20所界定。The substrate processing apparatus according to the present invention includes a chamber casing 11, a substrate support table 15, a lower electrode 17, a cover frame 20, a plurality of windows 30, an antenna 40, a radio frequency (RF) power supply 50, and a process gas supply unit 60. . The substrate supporting table 15 and the lower electrode 17 are provided in the chamber casing 11, and the substrate S is placed on the substrate supporting table 15 and the lower electrode 17. The cover frame 20 is coupled to the upper end of the chamber casing 11. The window 30 is provided in the cover frame 20. Antenna 40 and RF power supply 50 are located on window 30. The process gas supply unit 60 supplies process gas into the chamber 10, which is defined by the chamber housing 11 and the cover frame 20.

根據本發明之基材處理設備的特徵部件將進一步詳述於下。The features of the substrate processing apparatus according to the present invention will be further described in detail below.

首先,將參照第2及3圖說明蓋框架20。First, the cover frame 20 will be described with reference to FIGS. 2 and 3.

蓋框架20具有矩形框架結構。蓋框架20的內部分成五區,五個區域分別定義五個視窗30。The cover frame 20 has a rectangular frame structure. The interior of the cover frame 20 is divided into five zones, five zones defining five windows 30, respectively.

為形成此結構,蓋框架20包括外框架21,其構成矩形框架結構的周邊、以及分隔框架25,其設於外框架21內且互相耦接,使得外框架21的內部分成五個部分而形成五個視窗30。To form this structure, the cover frame 20 includes an outer frame 21 which constitutes a periphery of the rectangular frame structure, and a partition frame 25 which is disposed in the outer frame 21 and coupled to each other such that the inside of the outer frame 21 is divided into five parts to form Five windows 30.

形成於蓋框架20的五個視窗30包含一中央視窗30A,其位於蓋框架20的中央部分、以及四個周圍視窗30B,其圍繞中央視窗30A排列。The five windows 30 formed in the cover frame 20 include a central window 30A located at a central portion of the cover frame 20 and four peripheral windows 30B which are arranged around the central window 30A.

中央視窗30A和周圍視窗30B呈矩形。在此實施例中,如圖所示,四個周圍視窗30B按順時針方向繞著中央視窗30A排列。當然,四個周圍視窗30B亦按逆時針方向繞著中央視窗30A排列。The center window 30A and the surrounding window 30B have a rectangular shape. In this embodiment, as shown, the four surrounding windows 30B are arranged in a clockwise direction around the central window 30A. Of course, the four surrounding windows 30B are also arranged in a counterclockwise direction around the central window 30A.

在周圍視窗30B呈矩形的例子中,每一周圍視窗30B包括第一側邊a、第二側邊b、第三側邊c和第四側邊d。第一側邊a隔開周圍視窗30B和中央視窗30A與另一相鄰周圍視窗30B,其為沿順時針方向的下一視窗。第二側邊b隔開周圍視窗30B和沿順時針方向位於其後的另一相鄰周圍視窗30B。第三側邊c面對第一側邊a並與蓋框架20的周圍表面接壤。第四側邊d面對第二側邊b並與蓋框架20的周圍表面接壤。In the example in which the surrounding window 30B is rectangular, each of the surrounding windows 30B includes a first side a, a second side b, a third side c, and a fourth side d. The first side a separates the surrounding window 30B and the central window 30A from another adjacent surrounding window 30B, which is the next window in the clockwise direction. The second side b separates the surrounding window 30B and another adjacent surrounding window 30B that is located rearward in the clockwise direction. The third side c faces the first side a and is bordered by the surrounding surface of the cover frame 20. The fourth side d faces the second side b and borders the peripheral surface of the cover frame 20.

在期望上,各周圍視窗30B的第一側邊a同時與中央視窗30A的對應側邊和位於其前之周圍視窗30B的第二側邊b’接壤,使所有周圍視窗30B按順時針方向連續排在中央視窗30A周圍。Desirably, the first side a of each of the peripheral windows 30B is simultaneously bordered by the corresponding side of the central window 30A and the second side b' of the peripheral window 30B at the front thereof, so that all of the surrounding windows 30B are continuous in a clockwise direction. Arranged around the central window 30A.

另外,各周圍視窗30B的第一側邊a和第二側邊b由對應分隔框架25構成,其第三側邊c和第四側邊d由外框架21構成。Further, the first side a and the second side b of each of the surrounding windows 30B are constituted by the corresponding partition frame 25, and the third side c and the fourth side d are constituted by the outer frame 21.

如此,各周圍視窗30B與中央視窗30A四個側邊的其中一對應側邊接壤,四個周圍視窗30B則按順時針或逆時針方向繞著中央視窗30A排列。故整體而論,周圍視窗30B形成規則排列。Thus, each of the surrounding windows 30B is bordered by one of the four sides of the four sides of the center window 30A, and the four surrounding windows 30B are arranged around the center window 30A in a clockwise or counterclockwise direction. Therefore, as a whole, the surrounding windows 30B form a regular arrangement.

由如陶瓷材料組成之絕緣板31插入依上述排列形成的中央視窗30A和周圍視窗30B。各具梯狀結構的板支撐件22形成在外框架21的內面和分隔框架25的兩側,使絕緣板31的周邊由對應板支撐件22所支撐。The insulating window 31, which is composed of a ceramic material, is inserted into the central window 30A and the peripheral window 30B which are formed in the above arrangement. Plate support members 22 each having a stepped structure are formed on the inner surface of the outer frame 21 and both sides of the partition frame 25 such that the periphery of the insulating plate 31 is supported by the corresponding plate support member 22.

另外,支架23、26裝設於外框架21和分隔框架25,以免絕緣板31不當脫離視窗30。如圖所示,設於外框架21的支架23具有L形截面,設於分隔框架25的支架26具有U形截面。Further, the brackets 23, 26 are attached to the outer frame 21 and the partition frame 25 so as not to improperly disengage the insulating plate 31 from the window 30. As shown in the figure, the bracket 23 provided on the outer frame 21 has an L-shaped cross section, and the bracket 26 provided on the partition frame 25 has a U-shaped cross section.

U形支架26可同時支撐設於單一分隔框架對側的絕緣板31。The U-shaped bracket 26 can simultaneously support the insulating sheets 31 provided on the opposite sides of the single partition frame.

支架23、26由固定配件等固定於蓋框架20。The brackets 23, 26 are fixed to the cover frame 20 by a fixing fitting or the like.

另外,必要時可以各種方式修改支架23、26的形狀和結構。In addition, the shape and structure of the brackets 23, 26 can be modified in various ways as necessary.

參照第3圖,加熱流體通道24a形成於蓋框架20的外框架21中,使得加熱蓋框架的流體沿著加熱流體通道24a流動。此外,入口和出口連接短管24b設在外框架21的預定部分,使加熱流體通道24a經由短管24b連接外部加熱流體供應管線。Referring to Fig. 3, a heating fluid passage 24a is formed in the outer frame 21 of the cover frame 20 such that the fluid that heats the cover frame flows along the heating fluid passage 24a. Further, the inlet and outlet connection short tubes 24b are provided at predetermined portions of the outer frame 21 such that the heating fluid passages 24a are connected to the external heating fluid supply line via the short tubes 24b.

另外,天線通行凹槽27形成於蓋框架20的分隔框架25而在分隔框架25中產生空間,如此周圍天線45(其將詳述於後)可通過分隔框架25。換言之,如第2圖所示,天線通行凹槽27形成於分隔框架25,其將周圍視窗30B互相隔開。In addition, the antenna passage groove 27 is formed in the partition frame 25 of the cover frame 20 to create a space in the partition frame 25, so that the surrounding antenna 45 (which will be described later in detail) can pass through the partition frame 25. In other words, as shown in Fig. 2, the antenna passage grooves 27 are formed in the partition frame 25, which separates the peripheral windows 30B from each other.

在第3圖中,元件符號28代表天線固定托架,其安裝在各天線通行凹槽27中,以將天線固定於對應分隔框架25。元件符號29代表天線支架,其覆蓋各天線固定托架28,以防周圍天線45移離其安裝位置。較佳地,天線支架29亦具有U形截面。更佳地,天線支架29配置成使其也可用來支承對應絕緣板31。In Fig. 3, reference numeral 28 denotes an antenna fixing bracket which is mounted in each of the antenna passage grooves 27 to fix the antenna to the corresponding partition frame 25. Component symbol 29 represents an antenna mount that covers each antenna mount bracket 28 to prevent the surrounding antenna 45 from moving away from its mounting position. Preferably, the antenna holder 29 also has a U-shaped cross section. More preferably, the antenna mount 29 is configured such that it can also be used to support the corresponding insulating plate 31.

同時,雖然蓋框架20乃描繪成具有矩形框架結構,但本發明不限於此。例如,蓋框架20可具五邊形或六邊形框架結構,且可視需求以各種方式修改其結構。Meanwhile, although the cover frame 20 is depicted as having a rectangular frame structure, the present invention is not limited thereto. For example, the cover frame 20 can have a pentagon or hexagonal frame structure and its configuration can be modified in various ways as desired.

設有具上述結構之蓋框架20的基材處理設備中的天線40排列方式將參照第3及4圖說明如下。The arrangement of the antennas 40 in the substrate processing apparatus provided with the cover frame 20 having the above structure will be described below with reference to Figs. 3 and 4.

參照第3圖,二個中央天線41安裝在蓋框架20的中央視窗30A。四個周圍天線45安裝在四個周圍視窗30B。Referring to Fig. 3, two center antennas 41 are mounted on the center window 30A of the cover frame 20. Four surrounding antennas 45 are mounted on the four surrounding windows 30B.

二個中央天線41包含二個天線40,其引至蓋框架的中心且在中央視窗30A上朝順時針方向繞著中央視窗30A的中心延伸。The two central antennas 41 include two antennas 40 that lead to the center of the cover frame and extend clockwise around the center of the central window 30A on the central window 30A.

四個周圍天線45配置成使各天線引至一個對應周圍視窗30B並朝順時針方向相繼通過其它三個周圍視窗30B。例如,參照第3圖,第一周圍天線451朝順時針方向經由第二周圍視窗302和第三周圍視窗303從第一周圍視窗301延伸到第四周圍視窗304。第二周圍天線452朝順時針方向經由第三周圍視窗303和第四周圍視窗304從第二周圍視窗302延伸到第一周圍視窗301。第二周圍天線452的開始端位在第一周圍天線451內。第三周圍天線453和第四周圍天線454按與第一周圍天線451和第二周圍天線452相同的方式排列。故整體而論,四個周圍天線45規則地排成螺旋形,且彼此等距相隔。The four surrounding antennas 45 are configured to direct the antennas to a corresponding peripheral window 30B and successively pass through the other three surrounding windows 30B in a clockwise direction. For example, referring to FIG. 3, the first surrounding antenna 451 extends from the first surrounding window 301 to the fourth surrounding window 304 in a clockwise direction via the second surrounding window 302 and the third surrounding window 303. The second surrounding antenna 452 extends from the second surrounding window 302 to the first surrounding window 301 in a clockwise direction via the third surrounding window 303 and the fourth surrounding window 304. The beginning end of the second surrounding antenna 452 is located within the first surrounding antenna 451. The third surrounding antenna 453 and the fourth surrounding antenna 454 are arranged in the same manner as the first surrounding antenna 451 and the second surrounding antenna 452. Therefore, on the whole, the four surrounding antennas 45 are regularly arranged in a spiral shape and are equidistant from each other.

圖中元件符號401代表引進中央天線41或各周圍天線45的部分。元件符號405代表末端支撐件,其設在中央天線41或各周圍天線45延伸所至的位置,使得對應天線40經由末端支撐件連接接地部分。The symbol 401 in the figure represents a portion in which the center antenna 41 or each of the surrounding antennas 45 is introduced. The symbol 405 represents an end support provided at a position where the center antenna 41 or each of the surrounding antennas 45 extends, so that the corresponding antenna 40 is connected to the ground portion via the end support.

較佳地,三個天線插孔28a形成於每一天線固定托架28,使得穿過對應分隔框架25的三個周圍天線45插入各天線插孔28a。天線支架29(參照第2圖)耦接天線固定托架28的上部,使得周圍天線45穩固地固定於天線固定托架28。Preferably, three antenna insertion holes 28a are formed in each of the antenna fixing brackets 28 such that the three surrounding antennas 45 passing through the corresponding partition frame 25 are inserted into the respective antenna insertion holes 28a. The antenna holder 29 (refer to FIG. 2) is coupled to the upper portion of the antenna fixing bracket 28 such that the surrounding antenna 45 is firmly fixed to the antenna fixing bracket 28.

在本發明上述提供之蓋框架20和天線40的排列中,腔室內的電漿產生方向與周圍視窗和天線繞著蓋框架之中央視窗排列的結構有關。故在基材處理操作期間,不僅是腔室的中央部分,腔室的周圍亦均勻形成電漿密度。另外,分隔框架25的周圍會產生渦流,因而可更均勻地分配電漿。如此,由於上述蓋框架20與天線40的排列,將可明顯改善處理性能。In the above arrangement of the cover frame 20 and the antenna 40 provided by the present invention, the direction in which the plasma is generated in the chamber is related to the structure in which the surrounding window and the antenna are arranged around the central window of the cover frame. Therefore, during the substrate processing operation, not only the central portion of the chamber, but also the plasma density is uniformly formed around the chamber. In addition, eddy currents are generated around the partition frame 25, so that plasma can be distributed more uniformly. Thus, due to the arrangement of the cover frame 20 and the antenna 40 described above, the processing performance can be remarkably improved.

第4圖為顯示另一天線排列結構實施例的平面圖。Fig. 4 is a plan view showing an embodiment of another antenna array structure.

第4圖所示之天線40’包括中央天線41’和周圍天線45’,其面朝方向與第3圖實施例之中央天線41和周圍天線45的面朝方向相反。The antenna 40' shown in Fig. 4 includes a center antenna 41' and a peripheral antenna 45' whose facing directions are opposite to the facing directions of the center antenna 41 and the surrounding antenna 45 of the Fig. 3 embodiment.

每一周圍天線45’包括二個分支天線45a,其從單一導線分岔。故四對周圍天線45’按螺旋形式排列在四個周圍視窗30B上。Each of the surrounding antennas 45' includes two branch antennas 45a that are branched from a single wire. Therefore, the four pairs of surrounding antennas 45' are arranged in a spiral form on the four surrounding windows 30B.

接著,將參照第5至10圖說明供應及注入處理氣體至基材處理設備的結構,且基材處理設備設有具上述結構之蓋框架20。Next, the structure for supplying and injecting the processing gas to the substrate processing apparatus will be described with reference to FIGS. 5 to 10, and the substrate processing apparatus is provided with the cover frame 20 having the above structure.

在一實施例中,噴淋頭61(參照第7圖)設於分隔框架25的部分,其內定義中央視窗30A而使處理氣體從噴淋頭61注入到腔室內。換言之,中央視窗30A具有矩形結構,由此注入處理氣體至腔室內的噴淋頭61設在各分隔框架25上,其形成中央視窗30A的四邊。In one embodiment, the shower head 61 (see Fig. 7) is provided in a portion of the partition frame 25, and a central window 30A is defined therein to inject a process gas from the shower head 61 into the chamber. In other words, the center window 30A has a rectangular structure, whereby the shower head 61 that injects the processing gas into the chamber is provided on each of the partition frames 25, which form the four sides of the center window 30A.

第7圖為顯示蓋框架20之中央部分的顛倒透視圖。噴淋頭61的結構將參照此圖式說明於下。Fig. 7 is an inverted perspective view showing the central portion of the cover frame 20. The structure of the shower head 61 will be described below with reference to this figure.

分別設於形成中央視窗30A四邊之分隔框架25上的噴淋頭61包括規則排列的複數個注入孔62a。在第7圖之實施例中,噴淋頭61配置成使處理氣體從中央視窗30A的四邊、而非從中央視窗30A的角落注入到腔室。The shower heads 61 respectively provided on the partition frames 25 forming the four sides of the center window 30A include a plurality of injection holes 62a which are regularly arranged. In the embodiment of Figure 7, the showerhead 61 is configured to inject process gas from the four sides of the central window 30A rather than from the corners of the central window 30A into the chamber.

較佳地,噴淋頭61具有凹槽63(參照第6圖),其形成於分隔框架25的下表面而使處理氣體通過凹槽63、以及噴淋頭平板62,其內含注入孔62a並將凹槽63的外側耦接至分隔框架25。Preferably, the shower head 61 has a groove 63 (refer to FIG. 6) formed on the lower surface of the partition frame 25 to pass the process gas through the groove 63, and the shower head plate 62, which contains the injection hole 62a. The outer side of the groove 63 is coupled to the partition frame 25.

第8至10圖為顯示設有噴淋頭平板62之分隔框架25的截面圖。噴淋頭61的數個注入結構實施例將參照這些圖式說明於下。8 to 10 are cross-sectional views showing the partition frame 25 provided with the shower head plate 62. Several injection structure embodiments of the showerhead 61 will be described below with reference to these figures.

噴淋頭61的注入結構包括注入表面62b,其形成於分隔框架25的下表面。如第8圖所示,注入表面62b定位朝水平方向,注入孔62a則定位朝垂直方向。The injection structure of the shower head 61 includes an injection surface 62b formed on the lower surface of the partition frame 25. As shown in Fig. 8, the injection surface 62b is positioned in the horizontal direction, and the injection hole 62a is positioned in the vertical direction.

另外,如第9圖所示,注入表面62b’可呈半圓形或半橢圓形,注入孔62a’按徑向散佈形式形成於圓形注入表面62b’。圓形注入表面62b’和徑向注入孔62a’形成簡易結構,其可有效地將處理氣體均勻分配至腔室中,進而提高基材處理操作的效率。Further, as shown in Fig. 9, the injection surface 62b' may be semicircular or semi-elliptical, and the injection hole 62a' is formed in a radial dispersion form on the circular injection surface 62b'. The circular injection surface 62b' and the radial injection hole 62a' form a simple structure which can effectively distribute the processing gas uniformly into the chamber, thereby improving the efficiency of the substrate processing operation.

或者,如第10圖所示,注入表面62b”不僅可形成於分隔框架25的下表面,其還可形成在分隔框架25的一側邊,且可形成注入孔62a”使之貫穿下表面和分隔框架25的對應側邊。在此例中,側邊注入孔62a”最好配置成使從側邊注入孔62a”排放的處理氣體注入至中央視窗30A。Alternatively, as shown in Fig. 10, the injection surface 62b" may be formed not only on the lower surface of the partition frame 25, but also on one side of the partition frame 25, and may form an injection hole 62a" to penetrate the lower surface and The corresponding sides of the partition frame 25 are separated. In this example, the side injection holes 62a" are preferably arranged such that the process gas discharged from the side injection holes 62a" is injected into the center window 30A.

供應處理氣體至噴淋頭61的結構將參照包括第5及6圖之相關圖式說明於下,其可具體實施成具上述結構的數個實施例。The structure for supplying the process gas to the shower head 61 will be described below with reference to the related drawings including the fifth and sixth figures, which can be embodied in several embodiments having the above structure.

處理氣體供應結構可以各種方式體現。在一實施例中,氣體入口64(參照第6圖)形成在分隔框架25鄰接中央視窗30A四角的位置。氣體入口管65垂直耦接分隔框架25具氣體入口64的上表面。The process gas supply structure can be embodied in a variety of ways. In one embodiment, the gas inlet 64 (see Fig. 6) is formed at a position where the partition frame 25 abuts the four corners of the center window 30A. The gas inlet pipe 65 is vertically coupled to the upper surface of the partition frame 25 having the gas inlet 64.

處理氣體供應結構可配置成使經由各氣體入口管65供應的氣體以中央視窗30A的對應角落為起點沿著形成於對應分隔框架25的流動通道單向或雙向流動。在處理氣體供應結構配置成使氣體雙向流動的例子中,阻隔牆設於凹槽63的內部,其在中央視窗30A的對應側邊構成流動通道。The process gas supply structure may be configured such that the gas supplied through each of the gas inlet pipes 65 flows in a one-way or two-way flow along the flow passage formed in the corresponding partition frame 25 starting from a corresponding corner of the center window 30A. In the example where the process gas supply structure is configured to flow the gas in both directions, the barrier wall is disposed inside the recess 63, which forms a flow passage at a corresponding side of the center window 30A.

由於氣體入口管65設置環繞中央視窗30A的四角,故處理氣體供應結構的形成不會妨礙支托絕緣板31的支架26或29。Since the gas inlet pipe 65 is disposed around the four corners of the center window 30A, the formation of the process gas supply structure does not hinder the bracket 26 or 29 supporting the insulating plate 31.

元件符號65a、65b代表氣體入口管65的凸緣(flange)。上凸緣65a固定在設於腔室上方的上蓋結構,下凸緣65b固定於蓋框架20。The component symbols 65a, 65b represent flanges of the gas inlet pipe 65. The upper flange 65a is fixed to the upper cover structure provided above the chamber, and the lower flange 65b is fixed to the cover frame 20.

在此實施例中,四個氣體入口管65設置環繞中央視窗30A。參照第5圖,用於供應氣體至四個入口管65的單一氣體供應管66a分岔成二個第一供應管66b。每一第一供應管66b分岔成二個第二供應管66c。第二供應管66c連接各氣體入口管65。In this embodiment, four gas inlet tubes 65 are provided around the central window 30A. Referring to Fig. 5, a single gas supply pipe 66a for supplying gas to the four inlet pipes 65 is branched into two first supply pipes 66b. Each of the first supply pipes 66b is branched into two second supply pipes 66c. The second supply pipe 66c is connected to each of the gas inlet pipes 65.

同時,雖然噴淋頭61乃描繪成呈矩形排列,但本發明不限於此。視蓋框架20的結構而定,可以各種方式修改噴淋頭61的排列,例如,其可呈八邊形或六邊形排列。Meanwhile, although the shower head 61 is depicted as being arranged in a rectangular shape, the present invention is not limited thereto. Depending on the structure of the cover frame 20, the arrangement of the showerheads 61 can be modified in various ways, for example, it can be arranged in an octagon or a hexagon.

接著,將參照第11至14圖說明冷卻天線40的結構和加熱絕緣板31的結構。Next, the structure of the cooling antenna 40 and the structure of the heating insulating plate 31 will be described with reference to FIGS. 11 to 14.

加熱絕緣板31的結構包括加熱管71,其排放加熱空氣至絕緣板31上。The structure of the heating insulating plate 31 includes a heating pipe 71 that discharges heated air to the insulating plate 31.

加熱管71乃設計成適合均勻加熱絕緣板31的排列方式。必要時可適當修改加熱管71的排列方式,只要其能均勻加熱絕緣板31。在這些圖式之實施例中,二個加熱管線設於每一周圍視窗30B。置於中央視窗30A的絕緣板31由從周圍視窗30B延伸的加熱管線加熱。加熱管線包含加熱管71,其朝水平方向排列在視窗上且具有定向朝向視窗的流出孔。The heating tube 71 is designed to be suitable for uniformly heating the arrangement of the insulating sheets 31. The arrangement of the heating tubes 71 can be appropriately modified as necessary, as long as it can uniformly heat the insulating sheets 31. In the embodiment of these figures, two heating lines are provided in each of the surrounding windows 30B. The insulating plate 31 placed in the center window 30A is heated by a heating line extending from the surrounding window 30B. The heating line comprises a heating tube 71 which is arranged horizontally on the window and has an outflow opening directed towards the window.

當然,加熱管71可設置得比排在視窗上的天線低或高,以免互相干擾。Of course, the heating tubes 71 can be placed lower or higher than the antennas arranged on the window to avoid mutual interference.

如第11圖所示,加熱管線71a連接各加熱管71之間。在此例中,每一加熱管線71a包含直徑小於加熱管71直徑的管子。或者,可不設加熱管線71a。As shown in Fig. 11, the heating line 71a is connected between the heating pipes 71. In this example, each heating line 71a includes a tube having a diameter smaller than the diameter of the heating tube 71. Alternatively, the heating line 71a may not be provided.

如此,由於本發明之設備設有加熱絕緣板31的加熱管71,故可減少聚合物沉積至絕緣板31上。Thus, since the apparatus of the present invention is provided with the heating tube 71 for heating the insulating sheet 31, the deposition of the polymer onto the insulating sheet 31 can be reduced.

供應加熱空氣至加熱管71的方法可由各種結構具體施行,例如,把加熱空氣供應管線與之連接。在此實施例中,使用渦漩產生器73。此將參照第12圖說明於後。The method of supplying heated air to the heating pipe 71 can be specifically carried out by various structures, for example, connecting a heated air supply line thereto. In this embodiment, a swirl generator 73 is used. This will be explained later with reference to Fig. 12.

如第14圖所示,在冷卻天線40的結構中,各天線40、41、45呈中空管狀,冷卻流體流過管狀天線40,以冷卻天線40。As shown in Fig. 14, in the structure of the cooling antenna 40, each of the antennas 40, 41, 45 has a hollow tubular shape, and a cooling fluid flows through the tubular antenna 40 to cool the antenna 40.

在此實施例中,冷卻路徑乃配置成使冷卻流體經由天線40的開始端汲入天線40,接著經由其尾端排出天線40。沿著天線40流動的冷卻流體迴路構造可利用熟知技術具體實施,故不再進一步加以說明。In this embodiment, the cooling path is configured to cause the cooling fluid to break into the antenna 40 via the beginning of the antenna 40 and then exit the antenna 40 via its trailing end. The configuration of the cooling fluid circuit flowing along the antenna 40 can be embodied using well known techniques and will not be further described.

在本發明之一實施例中,絕緣板的加熱和天線的冷卻可由渦漩產生器73一起體現。此將詳述於下。In an embodiment of the invention, the heating of the insulating plate and the cooling of the antenna may be embodied by the vortex generator 73. This will be detailed below.

渦漩產生器73為能量分離裝置,其是利用圓管和具簡易結構的噴嘴、而未利用任何化學作用或燃燒作用,將壓縮空氣分成低溫空氣和高溫空氣。如第12圖所示,壓縮空氣經由供應管供應至渦管74。接著,供應至渦管74的壓縮空氣主要進入渦旋腔室75並以超高速旋轉。旋轉空氣流向加熱空氣出口。此時,當次要渦流通過主要渦流內的低壓區時,次要渦流將損失熱量及流向冷卻空氣出口。在此二氣流中,內部氣流的空氣粒子循環一週所費的時間和外部氣流的空氣粒子一樣,故內部氣流的移動速度比外部氣流慢。移動速度不同意味著動能減少。損失的動能會轉換成熱量,以致提高外部氣流的溫度,又進一步降低內部氣流的溫度。The vortex generator 73 is an energy separating device that uses a circular tube and a nozzle having a simple structure without using any chemical action or combustion action to separate the compressed air into low temperature air and high temperature air. As shown in Fig. 12, compressed air is supplied to the scroll 74 via the supply pipe. Next, the compressed air supplied to the scroll 74 mainly enters the swirl chamber 75 and is rotated at an ultra high speed. The rotating air flows to the heated air outlet. At this point, when the secondary vortex passes through the low pressure zone within the primary vortex, the secondary vortex will lose heat and flow to the cooling air outlet. In the two air flows, the air particles of the internal air flow circulate for the same time as the air particles of the external air flow, so the internal air flow moves at a slower speed than the external air flow. The difference in moving speed means that the kinetic energy is reduced. The lost kinetic energy is converted into heat, which increases the temperature of the external airflow and further reduces the temperature of the internal airflow.

加熱管71和天線40的冷卻路徑分別連接渦漩產生器73的兩端。如此,加熱絕緣板31與冷卻天線40的結構同時可由此簡易結構體現。The cooling paths of the heating tube 71 and the antenna 40 are respectively connected to both ends of the vortex generator 73. Thus, the structure of the heating insulating plate 31 and the cooling antenna 40 can be simultaneously embodied by the simple structure.

同時,雖然渦漩產生器乃描繪成做為提供加熱空氣和冷卻空氣的裝置,但此裝置不限於渦漩產生器。可採用具另一結構的冷卻器,也可個別提供用來供應加熱空氣的裝置和用來供應冷卻空氣的裝置。Meanwhile, although the vortex generator is depicted as a means for providing heated air and cooling air, the apparatus is not limited to the vortex generator. A cooler having another structure may be employed, or a device for supplying heated air and a device for supplying cooling air may be separately provided.

接著,將參照第15至19圖說明基材處理設備的能量損失減少結構,其能盡量減少腔室內面周圍的能量損失及確保電漿的均勻性。Next, the energy loss reducing structure of the substrate processing apparatus will be described with reference to Figs. 15 to 19, which can minimize the energy loss around the inner surface of the chamber and ensure the uniformity of the plasma.

如第15及16圖所示,襯墊保護件81安裝在腔室10的牆壁內面。各襯墊保護件81緊密接觸對應角落和對應腔室壁。As shown in Figs. 15 and 16, the pad protector 81 is mounted on the inner surface of the wall of the chamber 10. Each pad protector 81 is in intimate contact with the corresponding corner and corresponding chamber wall.

第15圖繪示襯墊保護件81,其設於蓋框架20之外框架的內面(第1圖的W部分),且其各自從蓋框架20的對應角落延伸到外框架的二相鄰內面。Figure 15 illustrates a pad protector 81 disposed on the inner face of the outer frame of the cover frame 20 (portion W of Figure 1), and each extending from a corresponding corner of the cover frame 20 to a second adjacent outer frame inside.

第16圖繪示當分隔框架25(參見第2圖等)不設在蓋框架20內或襯墊保護件81位於腔室10的外殼、而非蓋框架20的周圍時,襯墊保護件81的安裝情形。襯墊保護件81為亦稱襯墊或保護件的元件。襯墊保護件81包括各自呈L形且安裝在腔室10之對應角落的角落保護件82、和各具平面形狀且安裝在腔室10之對應壁面的壁面保護件83。FIG. 16 illustrates the spacer protector 81 when the partition frame 25 (see FIG. 2 and the like) is not disposed in the cover frame 20 or the pad protector 81 is located around the outer casing of the chamber 10 instead of the cover frame 20. Installation situation. The pad protector 81 is an element also known as a pad or protector. The pad protector 81 includes a corner protector 82 each having an L shape and mounted at a corresponding corner of the chamber 10, and a wall protector 83 each having a planar shape and mounted on a corresponding wall surface of the chamber 10.

襯墊保護件81是藉由陽極處理鋁板的表面而形成。The pad protector 81 is formed by anodizing the surface of the aluminum plate.

另外,在第16圖之實施例中,只有襯墊保護件81的角落保護件82是由陽極處理鋁板表面形成。在此例中,壁面保護件83由陶瓷塗佈板組成。Further, in the embodiment of Fig. 16, only the corner guard 82 of the pad protector 81 is formed by the surface of the anodized aluminum plate. In this example, the wall protector 83 is composed of a ceramic coated plate.

在此實施例中,相互組裝之各角落保護件82的邊緣和相鄰壁面保護件83的對應邊緣具有梯狀結構,其互相嚙合使角落保護件82與壁面保護件83二者間的接面在腔室壁面上齊平。In this embodiment, the edges of the mutually assembled corner protectors 82 and the corresponding edges of the adjacent wall protectors 83 have a ladder-like structure that engages each other such that the corner guard 82 and the wall protector 83 are joined together. It is flush on the wall of the chamber.

如第17圖之「C」部分所示,角落保護件82在其內角處具有相對腔室壁面傾斜的表面。As shown in the "C" portion of Fig. 17, the corner protector 82 has a surface inclined at its inner corner with respect to the wall surface of the chamber.

在根據本發明之能量損失減少結構中,孔洞12形成穿過對應角落保護件82後面的腔室壁面各角落。電容器85安裝於孔洞12中且電氣連接對應角落保護件82。電容器85連接外部電路或接地。In the energy loss reduction structure according to the present invention, the holes 12 are formed through the corners of the chamber wall surface behind the corresponding corner guard 82. The capacitor 85 is mounted in the hole 12 and electrically connected to the corresponding corner protector 82. The capacitor 85 is connected to an external circuit or to ground.

如第15至17圖所示,單一電容器85可插穿腔室10的壁面角落,並且連接至角落保護件82的背面。在此例中,供電容器85插入的孔洞12朝對角線方向形成貫穿腔室10的壁面角落。As shown in FIGS. 15 to 17, a single capacitor 85 can be inserted through the wall corner of the chamber 10 and connected to the back surface of the corner protector 82. In this example, the hole 12 into which the power supply container 85 is inserted forms a corner of the wall surface penetrating the chamber 10 in the diagonal direction.

或者,如第18圖所示,複數個電容器85設置圍繞腔室10各角落。在此例中,電容器85可插穿腔室10之角落對側的各壁面,並且連接至角落保護件82的背面。當然,孔洞12形成貫穿腔室10之角落對側的壁面,使電容器85經由各孔洞12插入壁面。Alternatively, as shown in Fig. 18, a plurality of capacitors 85 are disposed around corners of the chamber 10. In this case, the capacitor 85 can be inserted through the respective wall faces of the corners of the chamber 10 and connected to the back surface of the corner protector 82. Of course, the holes 12 form wall faces that pass through the corners of the corners of the chamber 10, so that the capacitors 85 are inserted into the wall surfaces via the respective holes 12.

雖然圖未顯示,但密封構件(未繪示)最好設置來密封腔室10供對應電容器85插入的各孔洞12。Although not shown, a sealing member (not shown) is preferably provided to seal the chamber 10 for each of the holes 12 into which the capacitor 85 is inserted.

電容器85利用螺紋耦接法耦接對應角落保護件82。為此,凸座(boss)84從角落保護件82的背面突出。外部螺紋部86設於電容器85的末端。外部螺紋部86旋入凸座84。另外,凸座凹槽13形成於孔洞12中,使得每一電容器85的凸座84插入對應凸座凹槽13。The capacitor 85 is coupled to the corresponding corner protector 82 by a threaded coupling method. To this end, a boss 84 protrudes from the back of the corner protector 82. The external thread portion 86 is provided at the end of the capacitor 85. The outer threaded portion 86 is screwed into the boss 84. In addition, a boss recess 13 is formed in the hole 12 such that the boss 84 of each capacitor 85 is inserted into the corresponding boss recess 13.

襯墊保護件81、凸座84、螺紋部86、電容器85和連接電容器85的外部電路彼此電氣相連。The pad protector 81, the boss 84, the screw portion 86, the capacitor 85, and the external circuit connecting the capacitor 85 are electrically connected to each other.

較佳地,支撐蓋88安裝在腔室10的壁面外面,以支撐對應電容器85。支撐蓋88可以各種方式體現,只要其能支撐插入孔洞12的對應電容器85。Preferably, the support cover 88 is mounted outside the wall surface of the chamber 10 to support the corresponding capacitor 85. The support cover 88 can be embodied in a variety of ways as long as it can support the corresponding capacitor 85 that is inserted into the aperture 12.

電容器85包含真空可變電容器。真空可變電容器具已知結構,故不再詳述於此。較佳地,在本發明中,真空可變電容器配置成使電容器的電容是藉由調整(如旋轉)設於腔室外的電容控制裝置89而控制。Capacitor 85 includes a vacuum variable capacitor. Vacuum variable capacitors have a known structure and will not be described in detail herein. Preferably, in the present invention, the vacuum variable capacitor is configured such that the capacitance of the capacitor is controlled by adjusting (e.g., rotating) the capacitance control device 89 provided outside the chamber.

控制電容器之電容的理由在於,當電容器85的電容經控制以回應腔室10內的電漿產生條件時,可最佳化能量損失減少結構的效率。The reason for controlling the capacitance of the capacitor is that the efficiency of the energy loss reduction structure can be optimized when the capacitance of the capacitor 85 is controlled in response to the plasma generation conditions within the chamber 10.

如第19圖所示,在基材處理設備缺少本發明之能量損失減少結構的例A中,腔室10之壁面與角落周圍的電位近乎為零。然在設有如本發明實施例之襯墊保護件81與電容器85的例B中,腔室10之角落周圍的電位顯著提高至零以上。As shown in Fig. 19, in the example A in which the substrate processing apparatus lacks the energy loss reducing structure of the present invention, the potential around the wall surface and the corner of the chamber 10 is almost zero. However, in the example B provided with the pad guard 81 and the capacitor 85 as in the embodiment of the present invention, the potential around the corner of the chamber 10 is remarkably increased to zero or more.

故在本發明中,如第19圖之例B所示,整體腔室10的電位差已降至最低,如此腔室10內可更均勻地產生電漿。特別地,如圖中的”K”部分所示,可減少腔室壁面上的能量損失。省下的能量全可用來產生電漿。因此,可提高如具本發明之能量損失減少結構的沉積設備或蝕刻設備的效率。Therefore, in the present invention, as shown in the example B of Fig. 19, the potential difference of the entire chamber 10 has been minimized, so that plasma can be more uniformly generated in the chamber 10. In particular, as shown in the "K" portion of the figure, energy loss on the wall of the chamber can be reduced. The energy saved can be used to generate plasma. Therefore, the efficiency of the deposition apparatus or etching apparatus such as the energy loss reducing structure of the present invention can be improved.

同時,具上述特徵之本發明可應用到所有使用電漿的基材處理設備類型。例如,本發明可用於乾蝕刻機、化學氣相沉積設備等。Meanwhile, the present invention having the above characteristics can be applied to all types of substrate processing apparatuses using plasma. For example, the present invention can be applied to a dry etching machine, a chemical vapor deposition apparatus, or the like.

如上所述,在根據本發明之具有視窗加熱結構的基材處理設備中,加熱空氣供應至視窗上,而以排放加熱空氣至視窗上的方式加熱視窗。故本發明可防止腔室內的副產物沉積於視窗,進而加強設備的可靠度。As described above, in the substrate processing apparatus having the window heating structure according to the present invention, the heated air is supplied to the window, and the window is heated in such a manner as to discharge the heated air to the window. Therefore, the present invention can prevent by-products in the chamber from being deposited in the window, thereby enhancing the reliability of the device.

另外,在本發明中,單一裝置可同時加熱視窗及冷卻天線,藉此儘管是具簡易結構,也可增強設備的性能。Further, in the present invention, a single device can simultaneously heat the window and the cooling antenna, thereby enhancing the performance of the device despite the simple structure.

本發明實施例所述之技術本意可獨立或結合實行。雖然本發明特別以示例實施例揭露如上,然應理解一般技藝人士在不脫離本發明之精神或範圍內,當可作各種型式與細節之更動。因此,本發明之精神或保護範圍須視後附申請專利範圍所界定者為準。The techniques described in the embodiments of the present invention are intended to be implemented independently or in combination. While the invention has been described in detail with reference to the embodiments of the present invention, it will be understood that Therefore, the spirit or scope of the invention is defined by the scope of the appended claims.

10...腔室10. . . Chamber

11...外殼11. . . shell

12...孔洞12. . . Hole

13...凹槽13. . . Groove

15...支撐臺15. . . Support table

17...電極17. . . electrode

20...蓋框架20. . . Cover frame

21...外框架twenty one. . . Outer frame

22...支撐件twenty two. . . supporting item

23、26、29...支架23, 26, 29. . . support

24a...通道24a. . . aisle

24b...短管24b. . . Short tube

25...分隔框架25. . . Separation frame

27...凹槽27. . . Groove

28...托架28. . . bracket

28a...插孔28a. . . Jack

30、30A、30B...視窗30, 30A, 30B. . . Windows

31...絕緣板31. . . Insulation board

40、40’、41、41’、45、45’、45a...天線40, 40', 41, 41', 45, 45', 45a. . . antenna

50...電源供應器50. . . Power Supplier

60...供應單元60. . . Supply unit

61...噴淋頭61. . . Sprinkler

62...噴淋頭平板62. . . Sprinkler plate

62a、62a’、62a”...注入孔62a, 62a', 62a"... injection hole

62b、62b’、62b”...表面62b, 62b', 62b"... surface

63...凹槽63. . . Groove

64...入口64. . . Entrance

65...入口管65. . . Inlet tube

65a、65b...凸緣65a, 65b. . . Flange

66a、66b、66c...供應管66a, 66b, 66c. . . Supply tube

71...加熱管71. . . Heating pipe

71a...加熱管線71a. . . Heating pipeline

73...渦漩產生器73. . . Vortex generator

74...渦管74. . . Vortex

75...渦旋腔室75. . . Vortex chamber

81、82、83...保護件81, 82, 83. . . Protective member

84...凸座84. . . Protrusion

85...電容器85. . . Capacitor

86...螺紋部86. . . Thread part

88...支撐蓋88. . . Support cover

89...電容控制裝置89. . . Capacitor control device

301-304...視窗301-304. . . Windows

401...部分401. . . section

405...支撐件405. . . supporting item

451-454...天線451-454. . . antenna

a-d、a’...側邊A-d, a’. . . Side

C、K、W...部分C, K, W. . . section

S...基材S. . . Substrate

第1圖為顯示根據本發明之基材處理設備構造的概略截面圖;Figure 1 is a schematic cross-sectional view showing the construction of a substrate processing apparatus according to the present invention;

第2圖為根據本發明之基材處理設備的蓋框架的透視圖;Figure 2 is a perspective view of a cover frame of a substrate processing apparatus according to the present invention;

第3圖為顯示根據本發明一實施例,基材處理設備之蓋框架上的天線排列結構的平面圖;3 is a plan view showing an antenna array structure on a cover frame of a substrate processing apparatus according to an embodiment of the present invention;

第4圖為顯示根據本發明另一實施例,基材處理設備之蓋框架上的天線排列結構的平面圖;4 is a plan view showing an antenna array structure on a cover frame of a substrate processing apparatus according to another embodiment of the present invention;

第5圖為蓋框架上部之關鍵部分的透視圖,其顯示根據本發明之基材處理設備的處理氣體供應結構;Figure 5 is a perspective view of a key portion of the upper portion of the cover frame showing the process gas supply structure of the substrate processing apparatus according to the present invention;

第6圖為沿著第5圖A-A線截切的截面透視圖;Figure 6 is a cross-sectional perspective view taken along line A-A of Figure 5;

第7圖為中央視窗的顛倒透視圖,其顯示根據本發明之基材處理設備的處理氣體注入結構;Figure 7 is an inverted perspective view of the center window showing the process gas injection structure of the substrate processing apparatus according to the present invention;

第8至10圖為顯示根據本發明數個實施例之基材處理設備的處理氣體注入結構的截面圖;8 to 10 are cross-sectional views showing a process gas injection structure of a substrate processing apparatus according to several embodiments of the present invention;

第11圖為顯示根據本發明之基材處理設備的天線冷卻結構和絕緣板加熱結構的平面圖;Figure 11 is a plan view showing an antenna cooling structure and an insulating plate heating structure of a substrate processing apparatus according to the present invention;

第12圖為顯示根據本發明之渦漩產生器的截面圖,用於冷卻天線及加熱絕緣板;Figure 12 is a cross-sectional view showing a vortex generator according to the present invention for cooling an antenna and heating an insulating plate;

第13圖為沿著第11圖B-B線截切的截面圖;Figure 13 is a cross-sectional view taken along line B-B of Figure 11;

第14圖為根據本發明之天線的截面圖;Figure 14 is a cross-sectional view of an antenna according to the present invention;

第15圖為顯示根據本發明之一結構實施例的平面圖,用於減少基材處理設備中的能量損失;Figure 15 is a plan view showing an embodiment of the structure of the present invention for reducing energy loss in a substrate processing apparatus;

第16圖為顯示根據本發明之另一結構實施例的平面圖,用於減少基材處理設備中的能量損失;Figure 16 is a plan view showing another structural embodiment according to the present invention for reducing energy loss in a substrate processing apparatus;

第17圖為第16圖關鍵部分的放大圖;Figure 17 is an enlarged view of the key part of Figure 16;

第18圖為對應第17圖的放大圖,但顯示另一實施例;以及Figure 18 is an enlarged view corresponding to Figure 17, but showing another embodiment;

第19圖為根據本發明之參考視圖,其繪示用於減少能量損失之結構的作用。Figure 19 is a reference view of the present invention showing the effect of a structure for reducing energy loss.

10...腔室10. . . Chamber

11...外殼11. . . shell

13...凹槽13. . . Groove

15...支撐臺15. . . Support table

17...電極17. . . electrode

20...蓋框架20. . . Cover frame

21...外框架twenty one. . . Outer frame

25...分隔框架25. . . Separation frame

30...視窗30. . . Windows

40...天線40. . . antenna

50...電源供應器50. . . Power Supplier

60...供應單元60. . . Supply unit

S...基材S. . . Substrate

W...部分W. . . section

Claims (5)

一種具有一視窗加熱結構的基材處理設備,包含:一腔室,其內處理一基材;一視窗,設在該腔室的一上部,以實現該腔室的一內部空間與一天線之間的耦接,且該視窗由一絕緣材料組成;一加熱管,設於該視窗上方,該加熱管排放加熱空氣至該視窗的一上表面上而加熱該視窗;以及用以供應該加熱空氣至該加熱管內的裝置。A substrate processing apparatus having a window heating structure, comprising: a chamber for processing a substrate; a window disposed at an upper portion of the chamber to realize an internal space of the chamber and an antenna Coupling, and the window is composed of an insulating material; a heating tube is disposed above the window, the heating tube discharges heated air to an upper surface of the window to heat the window; and is configured to supply the heated air To the device inside the heating tube. 如申請專利範圍第1項之基材處理設備,其中該腔室包含一腔室外殼和耦接該腔室外殼之一上端的一蓋框架,該蓋框架包含:一外框架,形成一多邊形框架結構的一周邊;以及多個分隔框架,其設於該外框架內且互相耦接而將該視窗分隔成複數個視窗,該等視窗包含:一中央視窗,其由該等分隔框架界定且位於該蓋框架的一中央部分上;以及圍繞該中央視窗的複數個周圍視窗,該等周圍視窗彼此被該等分隔框架隔開,且該加熱管同時加熱該中央視窗和該等周圍視窗。The substrate processing apparatus of claim 1, wherein the chamber comprises a chamber housing and a cover frame coupled to an upper end of the chamber housing, the cover frame comprising: an outer frame forming a polygonal frame a perimeter of the structure; and a plurality of divider frames disposed within the outer frame and coupled to each other to divide the window into a plurality of windows, the windows comprising: a central window defined by the divider frames and located a central portion of the cover frame; and a plurality of surrounding windows surrounding the central window, the peripheral windows being separated from each other by the dividing frame, and the heating tube simultaneously heating the central window and the surrounding windows. 如申請專利範圍第1項之基材處理設備,其中該加熱管朝一水平方向排列在該視窗上方,且複數個注入孔形成於該加熱管中,該等注入孔定向朝向該視窗。The substrate processing apparatus of claim 1, wherein the heating tube is arranged above the window in a horizontal direction, and a plurality of injection holes are formed in the heating tube, the injection holes being oriented toward the window. 如申請專利範圍第1項之基材處理設備,其中該裝置包含一渦漩產生器,用以同時產生加熱空氣和冷卻空氣。The substrate processing apparatus of claim 1, wherein the apparatus comprises a vortex generator for simultaneously generating heated air and cooling air. 如申請專利範圍第4項之基材處理設備,其中一冷卻通道形成於該天線中,使得冷卻流體沿著該天線流過該冷卻通道,且該裝置產生的該冷卻空氣供應至該天線的該冷卻通道內,以冷卻該天線。The substrate processing apparatus of claim 4, wherein a cooling passage is formed in the antenna such that a cooling fluid flows through the cooling passage along the antenna, and the cooling air generated by the device is supplied to the antenna Cool the antenna to cool the antenna.
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KR101477292B1 (en) * 2012-12-20 2014-12-29 엘아이지에이디피 주식회사 Substrate Processing Apparatus
KR102093559B1 (en) 2017-06-29 2020-03-25 (주)아이씨디 Plasma Processing Apparatus
CN110241403A (en) * 2019-07-23 2019-09-17 芜湖通潮精密机械股份有限公司 A kind of heater and preparation method thereof reducing the temperature difference and application

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6122439A (en) * 1990-01-19 2000-09-19 Applied Materials, Inc. Rapid thermal heating apparatus and method
JP2005332849A (en) * 2004-05-18 2005-12-02 Ulvac-Riko Inc Infrared heating equipment
JP2006179604A (en) * 2004-12-21 2006-07-06 Alfa Ec Co Ltd Substrate heating apparatus
US20080247739A1 (en) * 2004-09-21 2008-10-09 Sharp Kabushiki Kaisha Lamp heating apparatus and method for producing semiconductor device
US20090289053A1 (en) * 2008-04-09 2009-11-26 Applied Materials, Inc. Apparatus Including Heating Source Reflective Filter for Pyrometry

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100719804B1 (en) * 2005-08-08 2007-05-18 주식회사 아이피에스 Multi Magnetized Inductively Coupled Plasmas Structure
KR101020075B1 (en) * 2008-05-06 2011-03-09 주식회사 뉴파워 프라즈마 Inductively coupled plasma reactor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6122439A (en) * 1990-01-19 2000-09-19 Applied Materials, Inc. Rapid thermal heating apparatus and method
JP2005332849A (en) * 2004-05-18 2005-12-02 Ulvac-Riko Inc Infrared heating equipment
US20080247739A1 (en) * 2004-09-21 2008-10-09 Sharp Kabushiki Kaisha Lamp heating apparatus and method for producing semiconductor device
JP2006179604A (en) * 2004-12-21 2006-07-06 Alfa Ec Co Ltd Substrate heating apparatus
US20090289053A1 (en) * 2008-04-09 2009-11-26 Applied Materials, Inc. Apparatus Including Heating Source Reflective Filter for Pyrometry

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