TWI813143B - Lower electrode assembly and plasma treatment device - Google Patents

Abstract

A lower electrode assembly and a plasma processing device, wherein the lower electrode assembly includes: a base with a groove inside; an electrostatic chuck located on the base for adsorbing a substrate to be processed, with an electrostatic chuck inside A first gas channel is provided, and the first gas channel corresponds to the groove; the first ceramic piece and the second ceramic piece are provided in the groove, and they cooperate with each other to form a second gas channel, and the first ceramic piece and the second ceramic piece are arranged in the groove. The two gas channels are interconnected with the first gas channel and are used to deliver cooling gas to the back side of the substrate to be processed to control the temperature of the substrate to be processed, wherein the second gas channel is non-linear. The lower electrode assembly is beneficial to reducing the occurrence of ignition discharge in the electrostatic chuck.

Description

Lower electrode assembly and plasma processing device

The present invention relates to the field of semiconductors, and in particular, to a lower electrode assembly and a plasma processing device.

Among various processes in semiconductor device manufacturing, plasma treatment is a key process for processing the substrate to be processed into a designed pattern. In a typical plasma treatment process, the process gas forms plasma under radio frequency (Radio Frequency, RF) excitation. After passing through the electric field (capacitive coupling or inductive coupling) between the upper electrode and the lower electrode, these plasmas undergo physical bombardment and chemical reaction with the surface of the substrate to be processed, thereby processing the surface of the substrate to be processed.

The plasma processing process is performed in a plasma processing device. The plasma processing device includes a base and an electrostatic chuck located above the base. The electrostatic chuck is used to absorb the substrate to be processed. Usually, helium gas holes are provided in the base and the electrostatic chuck, and the helium gas holes are used to transport helium gas to the back side of the substrate to be processed to control the temperature of the substrate to be processed. However, conventional helium holes are prone to ignition and discharge problems.

The technical problem solved by the present invention is to provide a lower electrode assembly and a plasma processing device to reduce the occurrence of ignition discharge in the electrostatic chuck.

In order to solve the above technical problems, the present invention provides a lower electrode assembly, which includes: a base with a groove inside; an electrostatic chuck located on the base for adsorbing the substrate to be processed, with a third electrostatic chuck inside. A gas channel, the first gas channel corresponding to the groove; used to transport cooling gas to the surface of the substrate to be processed to control the temperature of the substrate to be processed; the first ceramic piece and the second ceramic piece are arranged in the groove, and the two cooperate with each other to form a second gas channel. The second gas channel and the first gas channel are interconnected and used to transport cooling gas to the back side of the substrate to be processed to control the substrate to be processed. The temperature of the substrate is processed, wherein the second gas channel is non-linear.

Optionally, the material of the base is metal; the material of the electrostatic chuck is ceramic material.

Optionally, the second gas channel has a bent structure or a curved structure.

Optionally, when the non-linear structure of the second gas channel is a bent structure, the bottom of the first ceramic piece is provided with a first opening that penetrates part of the first ceramic piece, and the top of the first ceramic piece is The side wall is provided with a second opening; the bottom of the second ceramic piece is provided with an opening, the opening is used to accommodate the top of the first ceramic piece, and the second opening is surrounded by the opening, and the second ceramic piece is provided with an opening. A gap is formed between the top of a ceramic piece and the inner wall of the opening, the top of the second ceramic piece is provided with a third opening, and the first opening, the second opening, the gap and the third opening are connected, The first opening, the second opening, the gap and the third opening constitute the second gas channel, and the center line of the gap is not collinear with the center lines of the first opening and the third opening.

Optionally, the first ceramic piece includes a bottom piece and a boss piece located above the bottom piece, the projected area of the boss piece on the base is smaller than the projected area of the bottom piece on the base, and the first ceramic piece The opening penetrates the bottom part and part of the boss part. The second opening is provided with the side wall of the boss part. The opening of the second ceramic part is used to accommodate the boss part. The boss part is connected with the boss part. The side walls of the opening form the gap.

Optionally, the first ceramic piece and the second ceramic piece are placed left and right or up and down, and they cooperate with each other to form a non-linear second gas channel.

Optionally, the first ceramic piece includes a first side, the second ceramic piece includes a second side, the first ceramic piece on the first side is in a zigzag shape, and the second ceramic piece on the second side It is in a zigzag shape, and the first side and the second side cooperate with each other to form the second gas channel.

Optionally, the outer wall of the first ceramic piece is provided with a spiral groove, the second ceramic piece has a cylindrical structure, and the second ceramic piece is sleeved on the outside of the first ceramic piece, The second gas channel is formed between the spiral groove and the inner wall of the second ceramic piece.

Optionally, the first ceramic piece and the second ceramic piece are integrally formed, and the second gas channel is provided inside the first ceramic piece and the second ceramic piece, and the second gas channel is composed of a plurality of rhombuses. The channels are stacked, and each diamond-shaped channel also includes connecting channels that connect the diagonals.

Optionally, it also includes: a high-frequency power source electrically connected to the lower electrode.

Optionally, the power of the high-frequency power source is: 3KW~12KW.

Optionally, the materials of the first ceramic piece and the second ceramic piece include: aluminum oxide, aluminum nitride or zirconium oxide.

Optionally, the cooling gas includes: at least one of inert gas, N ₂ and O ₂ .

Correspondingly, the present invention also provides a plasma processing device, including: a reaction chamber; and the above-mentioned lower electrode assembly is located at the bottom of the reaction chamber.

Optionally, the plasma processing device is an inductively coupled plasma processing device, and the inductively coupled plasma processing device further includes: an insulating window located on the top of the reaction chamber; and an inductive coil located above the insulating window.

Optionally, the plasma processing device is a capacitively coupled plasma processing device, and the capacitively coupled plasma processing device includes: a mounting substrate located on the top of the reaction chamber; A body shower head is located below the mounting substrate, opposite to the lower electrode assembly, and used to transport reaction gas into the reaction chamber.

Compared with the conventional technology, the technical solutions of the embodiments of the present invention have the following beneficial effects: In the plasma processing device provided by the technical solution of the present invention, the plasma processing device includes a lower electrode assembly, a base of the lower electrode assembly There is a groove in it, and the groove is used to accommodate the first ceramic piece and the second ceramic piece. The first ceramic piece and the second ceramic piece cooperate with each other to form a second gas channel. Inside the electrostatic chuck A first gas channel is provided, and the first gas channel and the second gas channel are interconnected to form a transmission path for transporting cooling gas to the back side of the substrate to be processed, wherein the second gas channel is non-linear, so that The cooling gas turns during the transmission process and is extinguished at the turning. Therefore, it is helpful to reduce the problem of ignition discharge in the electrostatic chuck.

1: first side

2:Second side

5: Inductively coupled plasma processing device

10,501:Reaction chamber

11,502:Open

12,22,32,42,510: Base

13,23,33,43,512:Electrostatic chuck

14:Electrode

15:Install the base plate

16:Gas sprinkler head

17: Reactive gas source

18: Matching network

19:RF power supply

20:Exhaust pump

21,51:Gas channel

34:Ceramic pieces

100:Plasma treatment device

120: Groove

121,221,421: The first ceramic piece

121a: Bottom part

121b: Boss piece

122,222,422: Second ceramic piece

123:First opening

124:Second opening

125: Gap

126:Third opening

127:Open your mouth

131,231,331,431: First gas channel

223,341: Second gas channel

342:Connection channel

423:Trench

503:Gas injection port

513:Electrostatic electrode

515: Inductive coupling coil

516: RF matching network

517:Insulated window

518: RF power source

520: Lining

540:Exhaust pump

550: Bias RF power source

552: RF matching network

W: substrate to be processed

Fig. 1 is a schematic structural diagram of a plasma processing device of the present invention; Fig. 2 is a schematic structural diagram of another plasma processing device of the present invention; Fig. 3 is an enlarged schematic diagram of the area A in Fig. 1; Fig. 4 is a first schematic diagram of the area A in Fig. 3 A perspective view of a ceramic piece; Figures 5a and 5b are a perspective view of a second ceramic piece in Figure 3; Figure 6 is another enlarged schematic view of area A in Figure 1; Figure 7 is another enlarged schematic view of area A in Figure 1 ; Figure 8 is another enlarged schematic view of area A in Figure 1; Figure 9 is a top view of the first ceramic piece and the second ceramic piece in Figure 8.

As mentioned in the prior art, it is known that ignition discharge easily occurs in the electrostatic chuck of a plasma processing device. Therefore, the present invention is committed to providing a plasma processing device to reduce the occurrence of ignition discharge in the electrostatic chuck, which will be described in detail below. : Figure 1 is a schematic structural diagram of a plasma treatment device of the present invention.

Please refer to Figure 1. The plasma processing device 100 includes: a reaction chamber 10; a lower electrode assembly located at the bottom of the reaction chamber 10. The lower electrode assembly includes a base 12 and an electrostatic chuck 13 above the base 12. The electrostatic chuck 13 is provided with electrodes 14 for adsorbing the substrate W to be processed.

In this embodiment, the plasma processing device 100 is a capacitively coupled plasma processing device. The capacitively coupled plasma processing device further includes: a mounting substrate 15 located on the top of the reaction chamber 10; a gas shower head 16 , is located below the mounting substrate 15, is connected to the reactive gas source 17, is used to transport the reactive gas into the reaction chamber 10, and is arranged opposite to the lower electrode assembly. The gas shower head 16 serves as the upper electrode of the plasma processing device 100, and the electrostatic chuck 13 serves as the lower electrode of the plasma processing device 100. A reaction area is formed between the upper electrode and the lower electrode. At least one radio frequency power supply 19 is applied to one of the upper electrode or the lower electrode through the matching network 18 to generate a radio frequency electric field between the upper electrode and the lower electrode to dissociate the reaction gas into plasma. Plasma It contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. The above active particles can undergo various physical and chemical reactions with the surface of the substrate W to be processed, causing the morphology of the substrate surface to change. That is, the etching process is completed. An exhaust pump 20 is also provided below the reaction chamber 10 for discharging the reaction by-products from the reaction chamber and maintaining the vacuum environment of the reaction chamber.

The radio frequency power supply 19 is a high frequency power source, and the power range of the high frequency power source is: 3KW~12KW. The material of the base 12 is metal; the material of the electrostatic chuck 13 is ceramic material. The electrostatic chuck 13 is used to electrostatically adsorb the substrate W to be processed. When the high frequency is applied to the base 12 When the power of the power source is high, there is a voltage difference between the electrostatic chucks 13 .

During the process of processing the surface of the substrate W to be processed, it is necessary to accurately control the temperature of the substrate W to be processed. The base 12 is usually also provided with a cooling channel, and the cooling channel is used to transport cooling liquid. The coolant is used to cool the base 12 . An insulating layer (not shown in the figure) is also provided between the electrostatic chuck 13 and the base 12, and a heater (not shown in the figure) is provided in the insulating layer. The heater is used to treat the substrate. The slices are heated. In addition, in order to better control the temperature of the substrate W to be processed, a gas channel 21 is usually provided in the base 12 and the electrostatic chuck 13. The gas channel 21 is used to deliver cooling gas to the back side of the substrate W to be processed. , the cooling gas includes: at least one of inert gas, N ₂ and O ₂ , the inert gas includes helium. Since there is a voltage difference between the electrostatic chucks 13 , ignition discharge is likely to occur during the transmission of the cooling gas in the gas channel 21 .

Figure 2 is a schematic structural diagram of another plasma processing device of the present invention.

In this embodiment, the plasma processing device is an inductively coupled plasma processing device 5. The inductively coupled plasma processing device 5 includes a reaction chamber 501. The reaction chamber 501 includes a generally cylindrical reaction chamber made of metal material. The side wall of the reaction chamber is provided with an opening 502 to accommodate the entry and exit of the substrate. An insulating window 517 is set above the side wall of the reaction chamber, and an inductive coupling coil 515 is set above the insulating window 517. The RF power source 518 applies RF voltage to the inductive coupling coil 515 through the RF matching network 516.

A lining 520 is provided inside the reaction chamber to protect the inner wall of the reaction chamber from being corroded by plasma. A gas injection port 503 is provided at one end of the side wall of the reaction chamber close to the insulating window. In other embodiments, it can also be provided in the central area of the insulating window 517 A gas injection port 503 is provided. The gas injection port 503 is used to inject reaction gas into the reaction chamber 501. The radio frequency power of the radio frequency power source 518 drives the inductive coupling coil 515 to generate a strong high-frequency alternating magnetic field, causing a low-pressure reaction in the reaction chamber. The gas is ionized to produce plasma. A base 510 is disposed downstream of the reaction chamber 501. An electrostatic chuck 512 is disposed on the base 510. An electrostatic electrode 513 is disposed inside the electrostatic chuck 512 for generating electrostatic suction to support the substrate W to be processed during the process. fixed. Plasma contains a large number of electrons, ions, excited atoms, molecules and spontaneous Based on active particles such as radicals, the above-mentioned active particles can undergo various physical and chemical reactions with the surface of the substrate to be processed, causing the morphology of the substrate surface to change, that is, completing the etching process. A bias RF power source 550 applies a bias RF voltage to the base through the RF matching network 552 to control the bombardment direction of charged particles in the plasma. An exhaust pump 540 is also provided below the reaction chamber 501 to discharge the reaction by-products out of the reaction chamber 501 and maintain the vacuum environment of the reaction chamber 501 .

Similarly, in order to better control the temperature of the substrate W to be processed, a gas channel 51 is usually provided in the base 510 and the electrostatic chuck 512. The gas channel 51 is used to deliver cooling to the back side of the substrate W to be processed. Gas, the cooling gas includes: at least one of an inert gas, N ₂ and O ₂ , the inert gas includes helium. Since there is a voltage difference between the electrostatic chucks 512 , ignition discharge is likely to occur during the transmission of the cooling gas in the gas channel 51 .

The lower electrode assembly is described in detail below: Please refer to Figures 3 to 5. Figure 3 is an enlarged schematic diagram of area A in Figure 1. The lower electrode assembly includes: a base 12 with a groove 120 (see Figure 2 ); The electrostatic chuck 13 is located on the base 12 and is used to adsorb the substrate W to be processed. It is provided with a first gas channel 131, and the first gas channel 131 corresponds to the groove 120; the first ceramic The second ceramic piece 121 and the second ceramic piece 122 are disposed in the groove 120 and cooperate with each other to form a second gas channel. The second gas channel and the first gas channel 131 are interconnected and used to supply the substrate to be treated. The back side of the sheet W delivers cooling gas to control the temperature of the substrate W to be processed, wherein the second gas channel is non-linear.

The materials of the first ceramic piece 121 and the second ceramic piece 122 include: aluminum oxide, aluminum nitride or zirconium oxide.

The significance of arranging the first ceramic piece 121 and the second ceramic piece 122 is that since the first ceramic piece 121 and the second ceramic piece 122 are both ceramic materials, the distance between the substrate W to be processed and the base 12 The distance needs to span the electrostatic chuck 13, the first ceramic piece 121 and the second ceramic piece 122. Therefore, the distance to be If the distance between the processing substrate W and the base 12 is relatively long, it is helpful to prevent arcing from occurring in the first air channel 131 .

Figure 4 is a perspective view of the first ceramic part 121. It can be seen from Figure 3 and Figure 4 that in this embodiment, the first ceramic part 121 includes: a bottom part 121a and a boss part 121b located above the bottom part 121a. , the projected area of the boss part 121b on the base 12 is smaller than the projected area of the bottom part 121a on the base 12, and the first ceramic part 121 is provided with a first part that penetrates the bottom part 121a and part of the boss part 121b. Opening 123, and a second opening 124 is provided on the side wall of the boss member 121b.

In other embodiments, the bottom of the first ceramic piece is provided with a first opening that penetrates part of the first ceramic piece, and the side wall of the top of the first ceramic piece is provided with a second opening; the second ceramic piece An opening is provided at the bottom, and the opening is used to receive the top of the first ceramic piece, and the second opening is surrounded by the opening, and a gap is formed between the top of the first ceramic piece and the inner wall of the opening. , the top of the second ceramic piece is provided with a third opening, and the first opening, the second opening, the gap and the third opening are connected, the first opening, the second opening, the gap and the third opening constitute the second gas channel.

Figures 5a and 5b are perspective views of a second ceramic piece in Figure 2.

Please refer to Figures 3, 4, 5a and 5b. The bottom of the second ceramic part 122 is provided with an opening 127. The opening 127 is used to accommodate the boss part 121b, and the boss part 121b is in contact with the opening. A gap 125 is formed between the inner walls of 127. A third opening 126 is provided on the top of the second ceramic piece 122, and the first opening 123, the second opening 124, the gap 125 and the third opening 126 are connected. , the first opening 123, the second opening 124, the gap 125 and the third opening 126 constitute a second gas channel, and the second gas channel is connected with the first gas channel 131, then the first opening 123. The second opening 124, the gap 125, the third opening 126 and the first gas channel 131 form the transmission path of the cooling gas. The center line of the gap is consistent with the center lines of the first opening and the third opening. Not collinear.

Since the first opening 123 penetrates the bottom member 121a and part of the boss member 121b, and the second opening 124 is provided on the side wall of the boss member 121b, therefore, the first opening 123 and No. The two openings 124 form an included angle, and the gap 125 includes: the first gap between the side wall of the boss member 121b and the inner wall of the opening 127 of the second ceramic member 122, and the top of the boss member 121b and the second ceramic member. There is a second gap between the bottom of the opening 127 of the second ceramic part 122, the first gap and the second gap form an included angle, and the side wall of the boss part 121b and the inner space of the opening 127 of the second ceramic part 122 The first gap between the side walls forms an included angle with the second opening 124, and the third opening 126 is provided in the second ceramic piece 122 at the bottom of the opening 127. Therefore, the second gap and the third opening 124 are formed at an angle. The three openings 126 form an included angle. It can be seen that the second gas channel has a multiple bending structure, so that the cooling gas continuously turns during the transmission process in the second gas channel, and its energy continues to decrease. Therefore, Although there is a voltage difference between the upper and lower surfaces of the electrostatic chuck 13, ignition discharge is not likely to occur.

The transmission path of the cooling gas is non-linear transmission. In addition to the above-mentioned bending structure, the non-linear transmission can also be curved transmission.

FIG. 6 is another enlarged schematic diagram of area A in FIG. 1 .

In this embodiment, the electrostatic chuck 23 is disposed in the first gas channel 231, and the base 22 is disposed in a groove. The groove is disposed in the first ceramic piece 221 and the second ceramic piece 222. The third ceramic piece 221 is disposed in the groove. A ceramic piece 221 includes a first side 1, and the second ceramic piece 222 includes a second side 2. The first side 1 and the second side 2 are placed matching each other on the left and right. Between the first ceramic piece 221 and the second side A second gas channel 223 is formed between the ceramic pieces 222 .

In this embodiment, the first side 1 is in a zigzag shape, and the second side 2 is in a zigzag shape, and the two cooperate with each other to form a second gas channel 223. Since the second gas channel 223 is non-linear, The cooling gas is caused to turn during the transmission process of the first gas channel 231 and the second gas channel 223, and is extinguished at the corner. Therefore, it is beneficial to reduce the occurrence of ignition discharge between the substrate to be processed and the electrostatic chuck 23. problem.

FIG. 7 is another enlarged schematic diagram of area A in FIG. 1 .

Please refer to Figure 7. The first ceramic piece and the second ceramic piece are integrally formed into a ceramic piece 34. The second gas channel 341 is provided in the ceramic piece 34. The second gas channel 341 includes a plurality of The rhombus-shaped channels are stacked, and each rhombus-shaped channel also includes a connecting channel 342 connecting the diagonal lines.

In this embodiment, since the second gas channel 341 is non-linear, the cooling gas turns during the transmission process of the first gas channel 331 and the second gas channel 341, and is extinguished at the corner. Therefore, , which is beneficial to reducing the problem of ignition discharge occurring between the substrate W to be processed and the electrostatic chuck 33 .

Figure 8 is another enlarged schematic view of area A in Figure 1; Figure 9 is a top view of the first ceramic piece and the second ceramic piece in Figure 8.

Please refer to Figures 8 and 9, the outer wall of the first ceramic piece 421 is provided with a spiral groove 423, the second ceramic piece 422 has a cylindrical structure, and the second ceramic piece 422 is sleeved on the The second gas channel is formed between the outer part of the first ceramic part 421 , the spiral groove 423 and the inner wall of the second ceramic part 422 .

In this embodiment, since the spiral groove 423 is non-linear, the second gas channel formed between the spiral groove 423 and the inner wall of the second ceramic piece 422 is non-linear. The cooling gas is straight, so that the cooling gas turns during the transmission process between the first gas channel 431 and the second gas channel, and is extinguished at the corner. Therefore, it is beneficial to reduce the risk of occurrence between the substrate to be processed and the electrostatic chuck 43. Ignition discharge problem.

Although the present invention is disclosed as above, the present invention is not limited thereto. Anyone skilled in the art will not be taken away from this. Various changes and modifications can be made within the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be subject to the scope defined by the patent application.

12: base

13:Electrostatic chuck

120: Groove

121: The first ceramic piece

122: Second ceramic piece

123:First opening

124:Second opening

125: Gap

126:Third opening

131: First gas channel

W: substrate to be processed

Claims (13)

A lower electrode assembly, which includes: a base with a groove inside; an electrostatic chuck located on the base for adsorbing a substrate to be processed, with a first gas channel inside, the third A gas channel corresponds to a groove; and a first ceramic piece and a second ceramic piece are arranged in the groove, and they cooperate with each other to form a second gas channel, and the second gas channel and the first ceramic piece The gas channels are interconnected and used to deliver a cooling gas to the back side of the substrate to be processed to control the temperature of the substrate to be processed, wherein the second gas channel is non-linear; wherein the first ceramic piece and the The second ceramic pieces are placed left and right, up and down, or arranged inside and outside, and the two cooperate with each other to form the second gas channel; the second gas channel is: a bent structure or a curved structure. The lower electrode assembly according to claim 1, wherein the material of the base is metal; and the material of the electrostatic chuck is ceramic material. The lower electrode assembly of claim 1, wherein the bottom of the first ceramic piece is provided with a first opening that penetrates part of the first ceramic piece, and the side wall of the top of the first ceramic piece is provided with a second opening; The bottom of the second ceramic piece is provided with an opening. The opening is used to receive the top of the first ceramic piece. The second opening is surrounded by the opening. A gap is formed between the top of the first ceramic piece and the inner wall of the opening. There is a gap, the top of the second ceramic piece is provided with a third opening, and the first opening, the second opening, the gap and the third opening are connected, the first opening, the second opening , the gap and the third opening constitute the second gas channel, and the center line of the gap is not collinear with the center lines of the first opening and the third opening; wherein the first ceramic part includes a bottom member and a protrusion located above the bottom member The projection area of the boss part on the base is smaller than the projected area of the bottom part on the base. The first opening penetrates the bottom part and part of the boss part, and the second opening is provided On the side wall of the boss piece, the opening of the second ceramic piece is used to receive the boss piece, and the boss piece and the side wall of the opening form the gap. The lower electrode assembly of claim 1, wherein the first ceramic piece includes a first side, the second ceramic piece includes a second side, the first ceramic piece on the first side is in a zigzag shape, and the third The second ceramic piece on two sides is in a zigzag shape, and the first side and the second side cooperate with each other to form the second gas channel. As for the lower electrode assembly of claim 1, the outer wall of the first ceramic piece is provided with a spiral groove, the second ceramic piece has a cylindrical structure, and the second ceramic piece is sleeved on the first The second gas channel is formed between the spiral groove on the outside of the ceramic piece and the inner wall of the second ceramic piece. The lower electrode assembly according to claim 1, wherein the first ceramic piece and the second ceramic piece are integrally formed, the first ceramic piece and the second ceramic piece are provided with the second gas channel, the second gas The channel is stacked by a plurality of rhombus-shaped channels, and each rhombus-shaped channel also includes a connecting channel connecting diagonals. The lower electrode assembly according to claim 1, further comprising: a high-frequency power source electrically connected to the lower electrode. The lower electrode assembly as described in claim 7, wherein the power of the high-frequency power source is: 3KW~12KW. The lower electrode assembly according to claim 1, wherein the materials of the first ceramic piece and the second ceramic piece include: aluminum oxide, aluminum nitride or zirconium oxide. The lower electrode assembly of claim 1, wherein the cooling gas includes: at least one of an inert gas, N ₂ and O ₂ . A plasma processing device, which includes: a reaction chamber; and a lower electrode assembly as described in any one of claim 1 to claim 10, located at the bottom of the reaction chamber. The plasma processing device of claim 11, wherein the plasma processing device is an inductively coupled plasma processing device, and the inductively coupled plasma processing device further includes: an insulating window located on the top of the reaction chamber; and The inductor coil is located above this insulating window. The plasma processing device of claim 11, wherein the plasma processing device is a capacitively coupled plasma processing device, and the capacitively coupled plasma processing device includes: a mounting substrate located on the top of the reaction chamber; and a gas The shower head is located below the mounting substrate, opposite to the lower electrode assembly, and is used to deliver a reaction gas into the reaction chamber.