TW201140243A - Photosensitive resin composition - Google Patents

Photosensitive resin composition Download PDF

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TW201140243A
TW201140243A TW100107208A TW100107208A TW201140243A TW 201140243 A TW201140243 A TW 201140243A TW 100107208 A TW100107208 A TW 100107208A TW 100107208 A TW100107208 A TW 100107208A TW 201140243 A TW201140243 A TW 201140243A
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group
carbon number
compound
resin composition
photosensitive resin
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TW100107208A
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Chinese (zh)
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Kenji Hara
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Adeka Corp
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/20Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F283/00Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G
    • C08F283/12Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G on to polysiloxanes
    • C08F283/124Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G on to polysiloxanes on to polysiloxanes having carbon-to-carbon double bonds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • C08F299/02Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
    • C08F299/08Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polysiloxanes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/80Siloxanes having aromatic substituents, e.g. phenyl side groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/56Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Silicon Polymers (AREA)
  • Materials For Photolithography (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Thin Film Transistor (AREA)

Abstract

Disclosed is a photosensitive resin composition-that can form a minute pattern by means of photolithography, can form a insulating film without heat treatment above 200 DEG C, and has no problems of carrier being trapped and charge mobility decreasing when used as a gate insulating film of an organic thin-film transistor-containing a photo-radical generating agent and a polysiloxane compound having units represented by the belowmentioned general formulae (1-4). (In formula 1, R1 represents a hydrogen atom or a methyl group, and R2 represents an alkylene group having a carbon number of 1-5 that may have a substituent alkyl group. In formula 2, R3 represents a hydrogen atom or an alkyl group having a carbon number of 1-4. In formula 3, R4 represents an alkyl group having a carbon number of 1-6 or a cycloalkyl group having a carbon number of 5-6. In formula 4, R5 represents a hydrogen atom or an alkyl group having a carbon number of 1-4.)

Description

201140243 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種使用有聚矽氧烷化合物之感光性樹脂 組合物,進而關於一種使用有該感光性樹脂組合物之負型 光阻(尤其是永久光阻)。 【先前技術】 近年來’業界正盛行關於液晶顯示裝置、EL(Eiectr〇 〇 LUmineSCenCe,電致發光)顯示裝置之研究,作為可藉由低 消耗電力驅動之顯示裝置之一的電子紙受到矚目。電子紙 可製成如紙般之較薄厚度,具有低消耗電力化及即使切斷 電源亦可保持圖像之優點,可期待其於電子書籍或海報方 面之應用。若使用塑膠膜作為電子紙之顯示基板,且使用 有機薄膜電晶體作為顯示裝置之驅動部,則其質地柔軟, 即使彎曲亦可盔損品質地g g ,、 …、貝質地進仃顯不,並且應用範圍亦擴 大,推動普及。 〇 有機薄膜電晶體之閘極絕緣膜一般係藉由CVD法 (chemical;apor deposition^^^^^^^)^^,b^. 氮化石夕、氧化I呂、裊 、 山 -料⑽&化鈦4肖絕緣性之無機系材 ,成膜而“,但由於CVD法需要大規模之真空系裝置, 故而於製造成本方面在 且為岡“… 又,該等無機系材料硬質 、、、 ,於應用於塑膠膜等可撓性美;t . 弯曲而破損之虞。 雛基板之情形時,有因 相對於此’有機系材料 藉由塗佈法或印刷'去廉僧曰機洛劑者較多故而可 法廉價且大!地製造,又,其彎曲性或 154534.doc 201140243 因此業界正盛行有機薄 緣材料的研究。 膜電晶體 對塑膠膜之密接性優異, 之閘極絕緣膜用之有機絕 電子紙等需要微細之顯示裝置, 對於此處所使用之有機 薄膜電晶體之閘極絕緣膜要炎形士咖 啄胰要衣形成微細圖案。作為微細圖 案之形成方法,有光微影法,而作直叮p丄 向作為可藉由光微影法形成 閘極絕緣膜之感光性樹脂钽人物 D物,已知有含有烷氧基矽烷 之縮合物及光酸產生劑吱鹼甚&如 劁及鹼產生劑之感光性樹脂組合物 (例如參考專利文獻1〜3)。 然而,此種感光性樹脂組合物存在因殘留之光酸產生劑 或驗產生劑及其等之分解物而發生電流又, 為了藉由烷氧基矽烷基之交聯使感光性樹脂組合物硬化, 需要進行·〜左右之熱處理。因此,無法將聚碳酸 自旨、聚對苯二甲酸乙二s旨等之塑膠膜無法作為基板。作為 可進打綠影㈣且獲得高絕緣性之絕緣膜的感光性樹脂 組合物’;見已知有含有具有環氧基之聚矽氧烷化合物及光 酸產生劑的感光性樹脂組合物,但由此種感光性樹脂組合 物獲得之絕緣膜存在如下問題:因環氧基之開環而生成之 羥基捕獲形成於半導體層之栽子,使電荷遷移率降低。 [先前技術文獻] [專利文獻] 專利文獻1 ··日本專利特開平6_i48895號公報 專利文獻2 :日本專利特開2007_43055號公報 專利文獻3 :曰本專利特開2〇〇7_3 1 653 1號公報 【發明内容】 154534.doc 201140243 [發明所欲解決之問題] 因此,本發明之目的在於提供一種感光性樹脂組合物, 其可藉由光微影法形成微細圖案,可不進行超過2〇〇。匸之 熱處理而形成絕緣膜,且不存在於用作有機薄膜電晶體之 閘極絕緣膜之情形時載子被捕獲而使電荷遷移率降低之問 題。 [解決問題之技術手段] 本發明者鑒於上述情況而進行努力研究,結果完成本發 明。即’本發明係提供含有具有下述通式(1)〜(4)所表示之 單元之聚矽氧烷化合物、及光自由基產生劑之感光性樹脂 組合物者: [化1] R1 0 I II 2 H2C=C—C—〇—R—S i 03/2 (1) (式中’ R]表示氫原子或甲基,R2表示可具有取代烷基之 碳數1〜5之伸烷基); [化2] R'^-Si03/2 ⑵ (式中,R3表示氫原子或碳數1〜4之烷基); [化3] [R^SiO^ (3) (式中,R4表示礙數1〜6之烧基或礙數5或6之環烧基)’ 154534.doc 201140243 [化4][Technical Field] The present invention relates to a photosensitive resin composition using a polyoxyalkylene compound, and further to a negative resist using the photosensitive resin composition (especially Is permanent photoresist). [Prior Art] In recent years, research on liquid crystal display devices and EL (Eiectr® mine LUmine SCenCe) electroluminescent devices has been popular in the industry, and electronic paper, which can be driven by low power consumption, has attracted attention. E-paper can be made into a thin film-like thickness, which has the advantage of low power consumption and image retention even when the power is turned off, and can be expected to be applied to an electronic book or a poster. When a plastic film is used as the display substrate of the electronic paper, and the organic thin film transistor is used as the driving portion of the display device, the texture is soft, and even if the bending is performed, the quality of the GG, ..., and the shell texture can be improved. The scope of application has also expanded to promote universal access. The gate insulating film of the organic thin film transistor is generally subjected to CVD (chemical; apor deposition^^^^^^^)^^, b^. nitriding, oxidizing I, 袅, --料 (10) & In addition, since the CVD method requires a large-scale vacuum system, the CVD method requires a large-scale vacuum system. Therefore, the inorganic materials are hard, and , used in plastic film and other flexible beauty; t. bending and damage. In the case of a young substrate, there are many cases where the organic material is coated or printed, and it is cheaper and larger! Made in the field, and its flexibility or 154534.doc 201140243 Therefore, the industry is prevailing in the research of organic thin-wall materials. The membrane transistor has excellent adhesion to the plastic film, and the organic electronic paper for the gate insulating film needs a fine display device. For the gate insulating film of the organic thin film transistor used here, it is necessary to have a smear-shaped cream. The clothes are formed into a fine pattern. As a method of forming the fine pattern, there is a photolithography method, and it is a photosensitive resin 钽 character D which can form a gate insulating film by photolithography, and is known to contain an alkoxy decane. A condensate and a photoacid generator, a ruthenium salt, and a photosensitive resin composition such as a hydrazine and a base generator (for example, refer to Patent Documents 1 to 3). However, in such a photosensitive resin composition, a current is generated due to a residual photoacid generator, a test agent, and the like, and the photosensitive resin composition is hardened by cross-linking of an alkoxyalkyl group. , It is necessary to carry out the heat treatment of ~~. Therefore, a plastic film such as a polycarbonate or a polyethylene terephthalate cannot be used as a substrate. As a photosensitive resin composition which can enter a green shadow (four) and obtain an insulating film having high insulating properties; see a photosensitive resin composition containing a polyoxyalkylene compound having an epoxy group and a photoacid generator, However, the insulating film obtained from such a photosensitive resin composition has a problem that a hydroxyl group formed by ring opening of an epoxy group traps a plant formed on a semiconductor layer, and the charge mobility is lowered. [PRIOR ART DOCUMENT] [Patent Document] Patent Document 1 Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. [Problem to be Solved by the Invention] Therefore, an object of the present invention is to provide a photosensitive resin composition which can be formed into a fine pattern by photolithography without exceeding 2 Å. The heat treatment is performed to form an insulating film, and the carrier is trapped to reduce the charge mobility when it is not used as a gate insulating film of an organic thin film transistor. [Technical means for solving the problem] The inventors of the present invention conducted diligent research in view of the above circumstances, and as a result, completed the present invention. In other words, the present invention provides a photosensitive resin composition containing a polyoxyalkylene compound having a unit represented by the following general formulae (1) to (4) and a photo-radical generating agent: [Chemical Formula 1] R1 0 I II 2 H2C=C—C—〇—R—S i 03/2 (1) wherein R is a hydrogen atom or a methyl group, and R 2 represents a alkylene group having a carbon number of 1 to 5 which may have a substituted alkyl group. R2^-Si03/2 (2) (wherein R3 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms); [Chemical 3] [R^SiO^ (3) (wherein R4 represents a burnt group of 1 to 6 or a ring-burning group of 5 or 6) 154534.doc 201140243 [Chem. 4]

(式中,R5表示氫原子或碳數卜4之烷基)。 [發明效果] 本發明之效果在於提供一種感光性樹脂組合物(尤其是 負型感光性樹脂組合物)、使用有感光性樹脂組合物之負 型光阻(尤其是永久光阻),該感光性樹脂組合物可製成不 僅透明!生較兩’而且可耐受製作基板時之溫度之耐熱性及 耐洛背I !生、進而作為永久光阻之隨時間經過之變化之耐性 優異的絕緣層。 【實施方式】 以下基於較佳貫施形態’詳細地說明本發明。 先,對具有上述通式(1)〜(4)所表示之單元之聚矽氧烷 化合物(以下有時稱為本發明之聚矽氧烷化合物)進行說 明。 上述通式(1)中,Rl表示氫原子或甲基,就保存穩定性 良好方面而言,較佳為甲基。R2表示可具有取代燒基之碳 數1 5之伸烧基。作為碳數丨〜5之伸烷基,可列舉亞甲基、 土伸丙基、伸丁基及伸戊基,雖就耐熱性方面而言 較佳為碳數較少,但就工業上易獲得方面而言,較佳為伸 乙基 '伸丙基及伸丁基,更佳為伸乙基及伸丙基最佳為 伸丙基。作為R可具有之取代烧基,例如可列舉甲基、2 基、丙基、異丙基、丁基、異丁基及第三丁基等但就耐 154534.doc 201140243 熱性方面而言,較佳為不具有取代烷基。 上述通式(2)中,R3表示氫原子或碳數丨〜4之烷基,作為 碳數1〜4之烷基’可列舉甲基、乙基、丙基、異丙基、丁 基、異丁基、第二丁基及第三丁基等。料r3,就工業上 易獲得且耐熱性良好方面而言,較佳為氫原子。(wherein R5 represents a hydrogen atom or an alkyl group having a carbon number of 4). [Effect of the Invention] The effect of the present invention is to provide a photosensitive resin composition (especially a negative photosensitive resin composition) and a negative photoresist (especially a permanent photoresist) using a photosensitive resin composition, which is photosensitive The resin composition can be made not only transparent! The insulating layer which is excellent in resistance to temperature change at the time of fabricating the substrate and which is resistant to change over time as a permanent photoresist. [Embodiment] Hereinafter, the present invention will be described in detail based on preferred embodiments. First, a polyoxyalkylene compound having a unit represented by the above formulas (1) to (4) (hereinafter sometimes referred to as a polyoxyalkylene compound of the present invention) will be described. In the above formula (1), R1 represents a hydrogen atom or a methyl group, and a methyl group is preferred in terms of good storage stability. R2 represents a stretching group having a carbon number of 15 which may have a substituted alkyl group. Examples of the alkylene group having a carbon number of 丨5 include a methylene group, a propyl group, a butyl group and a pentyl group. Although it is preferably a carbon number in terms of heat resistance, it is industrially easy. In terms of obtaining, it is preferred to extend ethyl propyl and butyl, more preferably ethyl and propyl are preferably propyl. Examples of the substituted alkyl group which R may have include a methyl group, a 2-group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, and a tert-butyl group, but are resistant to 154534.doc 201140243. It is preferred that it does not have a substituted alkyl group. In the above formula (2), R3 represents a hydrogen atom or an alkyl group having a carbon number of 丨4, and examples of the alkyl group having a carbon number of 1 to 4 include a methyl group, an ethyl group, a propyl group, an isopropyl group, and a butyl group. Isobutyl, second butyl and tert-butyl groups, and the like. The material r3 is preferably a hydrogen atom in terms of industrial availability and good heat resistance.

〇 上述通式(3)中,R4表示碳數卜6之烷基或碳數5或6之環 烷基。作為碳數卜6之烷基,可列舉甲基、乙基、丙基、 異丙基、丁基、異丁基、第二丁基、第三丁基、戊基:異 戊基、新戊基、2-戊基、第三戊基、己基及2_己基等;作 為碳數5或6之環烷基,可列舉環戊基、環己基、甲基環戊 基、環戊基甲基等。作為R4,就耐熱性良好方面而言,較 佳為乙基及甲基,更佳為甲基。 上述通式⑷中,V表示氫原子或碳數卜4之烧基。作為 碳數卜4之炫基,可列舉甲基、乙基、丙基、異丙基、丁 基、異丁基、第二丁基、第三丁基等。作為r5,就工業上 易獲得且耐熱性良好方面*言,較佳為氫原子。 於本發明之聚石夕氧燒化合物中,上述通式⑴所表示之 单疋之含量較佳為〇.卜5 mmGl/g,更佳為G5〜3麵⑽, 取佳為i〜2.5 mmoI/g。上述通式⑺所表示之單元之含量相 =上述通式⑴〜⑷所表示之單元之數量的合計,較佳為 斤Γ.8’更佳為^〜Μ’最佳為G泰^上述通式⑺ 所f示之單元之含量相對於上述通式⑴〜⑷所表示之單元 ^數量的合計’較佳為〇.㈣.8,更佳狀GW,最佳 5〜〇·6。上述通式(4)所表示之單元之含量相對於上述 154534.doc 201140243 通式(υ〜(4)所表示之單元之數量的合 〇.〇1〜0.6,更佳為0 03〜0 4,最佳為〇 〇5〜n 乂佳為 又,上述通式(2)所表示之單元之數量與 =元之數量的合計相對於上述通式(3)所表示斤 數里的比值根據本發明之感光性樹 、全& 士 & 、’且5物所使用之用 途而有所不同,於用作負型光阻之情形時,較佳: 〇_3〜5.0,更佳為〇·5〜3,最佳為15〜2.5。 ’’、 入’於將本發明 之感光性樹脂組合物用作透鏡、光波導 7 τ心边明材料之棒 形時,較佳為0.3〜7.0,更佳為〇-3〜5’最佳為Ο”。 ^ 於本發明之聚矽氧烷化合物之分子量過小之情形時, 發明之感光性樹脂組合物之塗佈性或成膜性^變得不= 分’於分子量過大之情料,㈣性會降低,因此本發明 之聚珍氧烧化合物之質量平均分子量較佳 1000〜100000,更佳為2000〜50000,最佳為3〇〇〇〜⑽I、 再者,於本發明中,所謂質量平均分子量,係指以四氣。夫 喃(以下稱為THF)作為溶劑進行Gpc(GeiIn the above formula (3), R4 represents an alkyl group of carbon number 6 or a cycloalkyl group having 5 or 6 carbon atoms. Examples of the alkyl group of the carbon number 6 include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a second butyl group, a third butyl group, a pentyl group: an isopentyl group, and a neopentyl group. a group, a 2-pentyl group, a third pentyl group, a hexyl group, a 2-hexyl group and the like; and examples of the cycloalkyl group having a carbon number of 5 or 6 include a cyclopentyl group, a cyclohexyl group, a methylcyclopentyl group, and a cyclopentylmethyl group. Wait. R4 is preferably an ethyl group or a methyl group, and more preferably a methyl group, in terms of good heat resistance. In the above formula (4), V represents a hydrogen atom or a carbon group of carbon number. Examples of the condensing group of carbon number 4 include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a second butyl group, and a third butyl group. As r5, it is industrially easy to obtain and heat resistance is good, and it is preferably a hydrogen atom. In the polyoxanthoxy compound of the present invention, the content of the monoterpene represented by the above formula (1) is preferably 〇.bu 5 mmGl/g, more preferably G5~3 face (10), preferably i~2.5 mmoI /g. The content of the unit represented by the above formula (7) = the total number of units represented by the above formulas (1) to (4), preferably jin. 8' is more preferably ^ Μ 'best is G tai ^ The sum of the units of the formula (7) and the number of units indicated by the above formulas (1) to (4) is preferably 〇.(4).8, more preferably GW, and most preferably 5 to 〇6. The content of the unit represented by the above formula (4) is more than the combination of the number of units represented by the above-mentioned 154534.doc 201140243 formula (υ~(4). 〇1~0.6, more preferably 0 03~0 4 Preferably, 〇〇5 〜 乂 为 又 又 又 又 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The photosensitive tree of the invention, the full &&& and the use of the five materials are different, and when used as a negative photoresist, it is preferably: 〇 _ 3 to 5.0, more preferably 〇 5 to 3, preferably 15 to 2.5. When the photosensitive resin composition of the present invention is used as a rod of a lens or an optical waveguide 7 τ heart-shaped material, it is preferably 0.3 to 7.0. More preferably, 〇-3~5' is preferably Ο". ^ When the molecular weight of the polyoxy siloxane compound of the present invention is too small, the coating property or film forming property of the photosensitive resin composition of the invention is changed. If not, the mass average molecular weight of the polyoxygenated compound of the present invention is preferably 1000 to 100,000. 2000~50000 is good, most preferably 3〇〇〇~⑽I, Moreover, in the present invention, the mass average molecular weight, refers to four gas. Cardiff pyran (hereinafter referred to as THF) as a solvent Gpc (Gei

Chromatog-raphy,凝膠滲透色譜)分析時以聚笨乙烯換2 之質量平均分子量。 本發明之聚矽氧烷化合物在其製法上存在殘留矽烷醇基 (SiOH基)之情況,由於存在矽烷醇基會使本發明之感光性 樹脂組合物之保存穩定性降低,故而本發明之聚矽氧烷化 合物中之矽烷醇基的含量較佳為1〇 mm〇1/g以下,更佳為 0.1 mmol/g以下。再者,矽烷醇基可藉由使用近紅外線分 光光度計(參照曰本專利特開2001 -208683號公報、日本專 154534.doc 201140243 刊特開 2003-35667 寻)或 9Si-NMRf 炎 as α 開2007-2 17249號公報箄w3曰本專利特 ’)之儀器分析進行宏旦 可藉由下文所述之方式利 里石夕院醇基 其減少。 化錢化合物或水解性醋使 本發明之 示之單元 t發乳燒化合物較佳 就升密接性方面而今, 為進而具有下述通式(5)所表 [化5] E~S'〇3/2 C5) (式t,E表示具有環氧基之基)。 上述通式(5)中’ E表示具有環氧基之基,作為具有環氧 基,例如可列舉下述通式⑹〜⑻所表示之基,就密接 性之提昇效果較好方面而言,較佳為下述通式⑺及⑻所 表不之基,更佳為下述通式(7)所表示之基: [化6] A r h2c—ch+ch2-0+rl_ ⑻ (式中’ R6表示可具有取代烷基之碳數1〜5之伸烷基,爪表 示0或1);Chromatog-raphy, gel permeation chromatography) was analyzed by polystyrene for 2 mass average molecular weight. In the case where the polyoxyalkylene compound of the present invention has a residual stanol group (SiOH group), the storage stability of the photosensitive resin composition of the present invention is lowered by the presence of a stanol group, and thus the polymerization of the present invention The content of the stanol group in the siloxane compound is preferably 1 〇 mm 〇 1 /g or less, more preferably 0.1 mmol / g or less. Further, the stanol group can be used by using a near-infrared spectrophotometer (refer to Japanese Patent Laid-Open Publication No. 2001-208683, Japanese Patent No. 154534.doc 201140243, No. 2003-35667) or 9Si-NMRf inflammation as α The analysis of the apparatus of the Japanese Patent Publication No. 2007-2 17249 箄w3 曰 专利 特 ) ) 宏 宏 宏 宏 宏 宏 宏 宏 宏 宏 宏 宏 宏 宏 宏 宏 宏 宏 宏 宏 宏 宏 宏The chemical compound or the hydrolyzed vinegar makes the unit t-emulsion compound of the present invention preferably in terms of adhesion, and further has the following formula (5): E5: E~S'〇3 /2 C5) (Formula t, E represents a group having an epoxy group). In the above formula (5), "E" represents a group having an epoxy group, and examples of the epoxy group include, for example, a group represented by the following formulas (6) to (8), and the effect of improving the adhesion is good. It is preferably a group represented by the following general formulae (7) and (8), more preferably a base represented by the following general formula (7): [Chem. 6] A r h2c-ch+ch2-0+rl_ (8) ' R6 represents an alkylene group having 1 to 5 carbon atoms which may have a substituted alkyl group, and the claws represent 0 or 1);

[化7J ⑺ (式中’ R7表示氫原子或甲基,Rs表示可具有取代烷基之 碳數〗〜5之伸烷基,η表示0或1); 154534.doc 201140243 [化8] ' (8) (式中’ R9表示可具有取代烷基之碳數1〜5之伸烷基)。 上述通式(6)中,R6表示可具有取代烷基之碳數1〜5之伸 烧基。作為碳數1〜5之伸烷基,可列舉亞曱基、伸乙基、 伸丙基、伸丁基及伸戊基,雖就耐熱性方面而言較佳為碳 數較少’但就工業上易獲得方面而言,較佳為伸乙基、伸 丙基及伸丁基,更佳為伸乙基及伸丙基,最佳為伸乙基。 作為R中可具有之取代烷基,例如可列舉曱基、乙基、丙 基、異丙基、丁基、異丁基及第三丁基等,但就耐熱性方 面而言,較佳為不具有取代烧基。m表示…,就原料易 獲得方面而言,m較佳為1。 ,上述通式⑺中,r7表示氫原子或甲基,r8表示可具有取 :烷基之妷數1〜5之伸烷基。作為碳數1〜5之伸烷基,可列 申乙基、伸丙基、伸丁基及伸戊基,雖就耐熱 而3較佳為碳數較少,但就工f 言,較佳為伸乙美^ 菓上易獲付方面而 甲乙基、伸丙基及伸丁基, 丙基,最伴盏/a 尺住马伸乙基及伸 取仏為伸乙基。作為R8中可呈 可列舉曱其、 ,、有之取代烧基,例如 土、乙基、丙基、異丙基、 丁基等,作 丁基、異丁基及第三 仁就耐熱性方面而言 n表示〇或1 , # h 杈佳為不具有取代烷基。 ,但就原料易獲得方面 於本發明之聚…化合物二有:圭為卜 示之單元之情形時,於上述通式(:具有上述通式⑴所表 ()所表示之單元之含量過 154534.doc 201140243 之清开4 *接性之提昇效果較小,又 時,存在使本發明之咸井# 匕夕之情形 …山 性樹脂組合物硬化而成之硬化物 ;7、出,之!況’因此上述通式⑺所表示之單元之 δ以%軋當量計較佳為2000〜50000,更佳為 3000〜20000。 & 1主马 二!:聚砂氧烧化合物可藉由下述通式⑽训所表 Ο =^錢化合物或齒化錢化合物之水解縮合反 應、即所謂溶膠··凝膠反應而獲得: [化9] R1 0 H2C=C-C-0-R2-s i -f X1 ]3 (1 a) (式中R及R與上述通式⑴含義相同,χΐ表示齒素原子 或碳數1〜4之烷氧基); [化 10][7 7 (7) (wherein R 7 represents a hydrogen atom or a methyl group, Rs represents an alkyl group which may have a carbon number of a substituted alkyl group] to 5, and η represents 0 or 1); 154534.doc 201140243 [Chemical 8] (8) (wherein R9 represents an alkylene group having 1 to 5 carbon atoms which may have a substituted alkyl group). In the above formula (6), R6 represents a stretching group having a carbon number of 1 to 5 which may have a substituted alkyl group. Examples of the alkylene group having 1 to 5 carbon atoms include an anthracenylene group, an ethylidene group, a propyl group, a butyl group, and a pentyl group. Although the heat resistance is preferably a small carbon number, In terms of industrial availability, it is preferably an ethyl group, a propyl group and a butyl group, more preferably an ethyl group and a propyl group, and most preferably an ethyl group. Examples of the substituted alkyl group which may be contained in R include a mercapto group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, and a t-butyl group. However, in terms of heat resistance, it is preferably Does not have a substituted alkyl group. m represents ..., and m is preferably 1 in terms of easy availability of the raw material. In the above formula (7), r7 represents a hydrogen atom or a methyl group, and r8 represents an alkylene group which may have an alkyl group of from 1 to 5. The alkylene group having a carbon number of 1 to 5 may be an ethyl group, a propyl group, a butyl group and a pentyl group. Although it is heat resistant, 3 is preferably a carbon number, but it is preferably a stretch. Emei ^ fruit is easy to be paid for methyl ethyl, propyl and butyl, propyl, most with 盏 / a 尺 马 伸 乙基 乙基 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 。 及 。 。 。 As R8, there may be mentioned, and the substituted alkyl group, such as earth, ethyl, propyl, isopropyl, butyl, etc., as the butyl group, the isobutyl group and the third group, in terms of heat resistance. In the sense that n represents 〇 or 1, # h 杈 preferably does not have a substituted alkyl group. However, in the case where the raw material is easily obtained, in the case where the compound of the present invention is in the form of a unit of the formula, the content of the unit represented by the above formula (: has the above formula (1) is 154534. .doc 201140243 Clearing 4 * The effect of the improvement of the joint is small, and when there is a case where the salty well # of the present invention is used, the mountain resin composition is hardened; 7, out,! Therefore, the δ of the unit represented by the above formula (7) is preferably from 2,000 to 50,000, more preferably from 3,000 to 20,000, in terms of % roll equivalent. & 1 main horse two!: polyoxalate compound can be passed through Formula (10) Training Table = 钱 化合物 化合物 或 齿 齿 齿 齿 齿 齿 齿 齿 齿 齿 齿 水解 水解 水解 水解 水解 水解 水解 水解 水解 水解 水解 水解 水解 水解 水解 水解 水解 水解 水解 水解 水解 水解 水解 水解 水解 水解 水解 ] ] ] ] ] ] ] ] ] ]3 (1 a) (wherein R and R have the same meanings as in the above formula (1), and χΐ represents a dentate atom or an alkoxy group having a carbon number of 1 to 4);

Si-fx2L (2Si-fx2L (2

G (式中’ R3與上述通式(2)含 )3義相同,χ2表示鹵素原子或碳 數1〜4之烷氧基); [化 11] R^2~Si-{-X3]2 (3 a) (式中,R4與上述通式(3)令羞^ , J 3義相同’ χ3表示鹵素原子或碳 數1〜4之烷氧基); [化 12]G (wherein R3 is the same as in the above formula (2)), and χ2 represents a halogen atom or an alkoxy group having 1 to 4 carbon atoms; [Chemical 11] R^2~Si-{-X3]2 (3 a) (wherein R4 is the same as the above formula (3), and J 3 is the same as ''3' means a halogen atom or an alkoxy group having a carbon number of 1 to 4);

Si+X4]2 (4 154534.doc •11- 201140243 (式中,R5與上述通式(4)含義相同,χ4表示自素原子或碳 數卜4之烷氧基)。 作為上述通式(la)所表示之烷氧基矽烷化合物,例如可 列舉(丙烯醯氧基甲基)三甲氧基矽烷、(2_丙烯醯氧基丙 基)二曱氧基矽烷' (3-丙烯醯氧基丙基)三甲氧基矽烷、(3_ 丙烯醯氧基丙基)三乙氧基矽烷、(甲基丙烯醯氧基曱基)三 甲氧基矽烷、(2-曱基丙烯醯氧基丙基)三曱氧基矽烷、(% 甲基丙烯醯氧基丙基)三甲氧基矽烷、(3_甲基丙烯醯氧基 丙基)三乙氧基矽烷;作為上述通式(la)所表示之_化矽烷 化合物,例如可列舉(3·丙烯醯氧基丙基)三氯矽烷、(3_曱 基丙烯醯氧丙基)三氣矽烷等。作為上述通式(la)所表示之 烷氧基矽烷化合物或鹵化矽烷化合物,就反應性良好且反 應易控制方面而言,較佳為(3_曱基丙烯醯氧基丙基)三曱 氧基矽烷及(3-甲基丙烯醯氧基丙基)三乙氧基矽烷,更佳 為(3-甲基丙烯醯氧基丙基)三曱氧基矽烷。 作為上述通式(2a)所表示之烧氧基矽烧化合物,例如可 列舉苯基三曱氧基矽烷、苯基三乙氧基矽烷、苯基三異丙 氧基石夕烧、4-曱基苯基三曱氧基矽烷、4-曱基苯基三乙氧 基石夕烧、4-甲基苯基三異丙氧基矽烷等;作為上述通式 (2a)所表示之鹵化矽烷化合物,例如可列舉苯基三氣石夕 烧、4-甲基苯基三氯矽烷等。作為上述通式(2&)所表示之 烧氧基石夕烧化合物或齒化石夕烧化合物,就反應性良好且反 應易控制方面而言,較佳為苯基三曱氧基矽烷及苯基三乙 氧基矽烷,更佳為苯基三曱氧基矽烷。 154534.doc -12- 201140243 述通式(3a)所表示之烷氧基矽烷化合物,例如可 列舉二甲基二 M ^ 4 一 基矽烷、二甲基二乙氧基矽烷、二甲基 一吳丙乳基石夕、t*· π —乙基苯基二f氧基矽烷、二乙基二乙 氧基炫J、二7 _ 土一異丙氧基石夕烧、二丙基二 院、二丙基二 达^、 —乳基矽烷、二丙基二異丙氧基矽烷等;作 為上述通式(3 a)所矣-上 表不之函化石夕烧化合物,例如可列舉二 甲基—氯發燒、-7 « Ο 一乙基二氯矽烷、二丙基二氯矽烷等。作 1上述通式⑼)所表示之烧氧基我化合物或i化石夕垸化 〇物’就反應性良好且反應易控制方面而t,較佳為二甲 基-甲氧基矽烷及二甲基二乙氧基矽烷,更 曱氧基矽烷。 例如可 二苯基 雙(4-甲 作為上述通式(4a)所表示之烧氧基⑦院化合物 列舉二苯基二甲氧基矽烷、二笨基二乙氧基矽烷 —異丙氧基钱、雙(4_曱基苯基)二甲氧基石夕燒mSi+X4]2 (4 154534.doc •11-201140243 (wherein R5 has the same meaning as the above formula (4), and χ4 represents a self-atomic atom or a carbon alkoxy group). The alkoxydecane compound represented by la) may, for example, be (acryloxymethyloxy)trimethoxynonane or (2-propyleneoxypropyl)dimethoxyoxydecane' (3-propenyloxyl). Propyl)trimethoxydecane, (3-propyleneoxypropyl)triethoxydecane, (methacryloxycarbonyl)trimethoxydecane, (2-mercaptopropoxypropyl) Trimethoxy decane, (% methacryloxypropyl) trimethoxy decane, (3-methacryloxypropyl) triethoxy decane; as represented by the above formula (la) Examples of the decane compound include (3. propylene methoxy propyl) trichloro decane, (3 fluorenyl propylene oxypropyl) trioxane, etc., and the alkoxy group represented by the above formula (la). The decane compound or the halogenated decane compound is preferably (3-methacryloxypropyl) three in terms of good reactivity and easy control of the reaction. Oxydecane and (3-methacryloxypropyl)triethoxydecane, more preferably (3-methacryloxypropyl)trimethoxydecane. As the above formula (2a) Examples of the alkoxylate compound represented by the group include phenyl trimethoxy decane, phenyl triethoxy decane, phenyl triisopropoxide, and 4-mercaptophenyl trimethoxy decane. And 4-mercaptophenyl triethoxy zeoxime, 4-methylphenyl triisopropoxy decane, etc.; as the halogenated decane compound represented by the above formula (2a), for example, phenyl tris, Anthracite, 4-methylphenyltrichloromethane, etc., as the alkoxylate compound or the tooth fossil compound represented by the above formula (2&), in terms of good reactivity and easy control of the reaction, Preference is given to phenyltrimethoxy decane and phenyltriethoxy decane, more preferably phenyltrimethoxy decane. 154534.doc -12- 201140243 Alkoxydecane represented by the formula (3a) Examples of the compound include dimethyldi M ^ 4 - decyl hexane, dimethyl diethoxy decane, and dimethyl ketone. t*· π-ethylphenyl bis-oxy decane, diethyl diethoxy hydrazone J, bis 7 _ earth-isopropoxy zeshi, dipropyl bis, dipropyl bis - aryl decane, dipropyl diisopropoxy decane, etc.; as a compound of the above formula (3 a) - the above-mentioned fossilized compound, for example, dimethyl-chloro fever, -7 « Ο monoethyldichlorodecane, dipropyldichlorodecane, etc. as an alkoxy compound or i fossilized oxime represented by the above formula (9)) is excellent in reactivity and easy to control. t, preferably dimethyl-methoxydecane and dimethyldiethoxydecane, more decyloxydecane. For example, diphenyl bis (4-methyl as the alkoxy 7 compound represented by the above formula (4a) is exemplified by diphenyl dimethoxy decane, dipyridyl diethoxy decane - isopropoxy alcohol. , bis(4_mercaptophenyl)dimethoxy sulphide m

G 基苯基)二乙氧基錢、雙(4-甲基苯基)二異丙氧基石夕烧 等,作為上述通式(4a)所表示之函切烧化合物,例如可 列舉二苯基二氯㈣、雙(4_甲基苯基)三氣錢等。作為 上述通式(4a)所表示之烧氧基料化合物或函化石夕烧化合 物就反應性良好且反應易控制方面而言,較佳為二苯基 -甲氧基石夕烧及二苯基二乙氧基石夕烧,更佳為二苯基二甲 氣基碎烧。 於將上述通式(la)〜(4a)所表示之絲基㈣化合物或函 化錢化合物水解縮合之情料,較佳為於溶财使用酸 或鹼等觸媒進行反應。作為反應中可使用之溶劑,可列 154534.doc 13 201140243 舉··水、甲醇、乙醇、正丙醇、異丙醇、正丁醇、異丁 醇、丙酮、甲基乙基酮、二吟烧、四氫吱喃、曱苯、二甲 苯、環己烷等,可使用該等中之一種,亦可混合使用兩種 以上。為了使用水以外之溶劑,較佳為為了促進水解縮合 反應而添加適量之水進行反應。 於烧氧基梦烧化合物或鹵化梦烧化合物之水解縮合反應 中,烧氧基矽院基或齒化矽烧基利用水而水解生成矽烷醇 基,所生成之矽烷醇基彼此、或者矽烷醇基與烷氧基矽烷 基或與鹵化矽烷基發生縮合而生成矽氧烷基(Si〇si*)。 作為上述水解縮合反應之觸媒,可列舉:鹽酸、磷酸、 硫酸等無機酸類;曱酸、乙酸、草酸、捧樣酸、甲績酸、 苯磺酸、對甲笨磺酸、磷酸單異丙酯等有機酸類;氫氧化 鈉、氫氧化鉀、氫氧化鋰、氨等無機鹼類;三甲胺、三乙 胺單乙醇胺、二乙醇胺等胺化合物(有機鹼)類等,可使 用該等中之-種,亦可併用兩種以上。水解縮合反應之溫 度雖然根據溶劑之種類、觸媒之種類及量等而有所變化, 但較佳為0〜80°C,更佳為5〜5〇°C,最佳為8〜30t。 於將上述通式(la)〜(4a)所表示之烧氧基石夕烧化合物或函 化石夕说化合物水解縮合之情形時,可使各炫氧基梦烧化合 物或鹵化;^烧化合物分別進行反應’亦可混合後進行反 應’就反應物之不均較少而可敎地進行生產方面而言, 較佳為混合後進行反應。 —月之4石夕氧烧化合物進而具有上述通式⑺所表G-phenyl phenyl) diethoxy ketone, bis (4-methylphenyl) diisopropoxy oxalate, etc., as the cleavage compound represented by the above formula (4a), for example, diphenyl group Dichloro (tetra), bis (4-methylphenyl) three gas and so on. The alkoxylate compound or the functionalized fossil compound represented by the above formula (4a) is preferably diphenyl-methoxy-stone and diphenyl-di, in terms of good reactivity and easy control of the reaction. The ethoxylated stone is more preferably diphenyl dimethyl-based. In the case where the compound of the silk group (IV) represented by the above formulas (1a) to (4a) or the functional compound is hydrolyzed and condensed, it is preferred to carry out the reaction using a catalyst such as an acid or a base. As a solvent which can be used in the reaction, it can be listed as 154534.doc 13 201140243 · water, methanol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol, acetone, methyl ethyl ketone, diterpene One type of these may be used for the calcination, tetrahydrofuran, toluene, xylene, cyclohexane, etc., or two or more kinds may be used in combination. In order to use a solvent other than water, it is preferred to carry out a reaction by adding an appropriate amount of water in order to promote the hydrolysis condensation reaction. In the hydrolytic condensation reaction of the oxyalkylating compound or the halogenated dreaming compound, the alkoxy fluorene group or the dentate oxime group is hydrolyzed to form a stanol group by using water, and the stanol groups formed, or stanol The group is condensed with an alkoxyalkyl group or with a halogenated alkyl group to form a fluorenylalkyl group (Si〇si*). Examples of the catalyst for the hydrolysis condensation reaction include inorganic acids such as hydrochloric acid, phosphoric acid, and sulfuric acid; tannic acid, acetic acid, oxalic acid, citric acid, methyl acid, benzenesulfonic acid, p-toluenesulfonic acid, and monoisopropyl phosphate. Organic acids such as esters; inorganic bases such as sodium hydroxide, potassium hydroxide, lithium hydroxide, and ammonia; and amine compounds (organic bases) such as trimethylamine, triethylamine monoethanolamine, and diethanolamine, etc., which can be used. - Kinds, or two or more types may be used in combination. The temperature of the hydrolysis condensation reaction varies depending on the kind of the solvent, the kind and amount of the catalyst, and the like, but is preferably 0 to 80 ° C, more preferably 5 to 5 ° C, and most preferably 8 to 30 t. When the alkoxylated compound or the compound of the compound represented by the above formulas (1a) to (4a) is hydrolyzed and condensed, each of the oxy-oxyl compounds or the halogenated compound can be subjected to a halogenation reaction; The reaction 'may be carried out after mixing and mixing'. In terms of production in which the unevenness of the reactants is small and the production is measurable, it is preferred to carry out the reaction after mixing. - the 4th month of the oxylate compound further has the above formula (7)

示之单元之情形時,除卜、+sI * 1^4通式(la)〜(4a)所表示之烷氧基 154534.doc _ 14· 201140243 矽烷化合物或齒化矽烷化合物以外,亦將下述通式(5 a)所 表不之烷氧基矽烷化合物或齒化矽烷化合物水解縮合即 可: [化 13] E-Si-fx5]3 (5 a) (式中,E與上述通式(5)含義相同,χ5表示鹵素原子或碳數 1〜4之烷氧基)。 作為上述通式(5a)所表示之烷氧基矽烷化合物或鹵化矽 烷化合物,例如可列舉:3,4·環氧丁基三甲氧基矽烷、2_ 縮水甘油氧基丙基三甲氧基矽烷、3•縮水甘油氧基丙基三 甲氧基矽烷、2-縮水甘油氧基_丨_曱基乙基三甲氧基矽烷、 3-縮水甘油氧基丙基三乙氧基矽烷、2_(3,4_環氧環己基)乙 基三甲氧基矽烷、2-(3,4-環氧環己基)乙基三乙氧基矽 烷、3,4-環氧環己基三甲氧基矽烷、3,4_環氧環己基三乙 乳基矽烷、2-(3,4-環氧-4-曱基環己基)丙基三曱氧基矽烷 等。 於藉由烷氧基矽烷化合物或齒化矽烷化合物之水解縮合 反應獲得本發明之聚矽氧烷化合物之情形時,製法上會殘 留石夕烧醇基’由於該钱醇基會使本發明之感光性樹脂組 合物之保存穩定性降低,故而較佳為將矽烷醇基封端。於 將矽烷醇基封端之情形時可採用如下方法:利用三甲基氯 矽烷、六曱基二矽氮烷進行三甲基矽烷基化之方法;利用 原甲酸酯、原乙酸醋、四烧氧基石夕甲⑮、碳酸g旨等水解性 154534.doc -15- 201140243 酯化合物進行烷氧基化之方法等。 其次’對光自由基產生劑進行說i本發明巾之所謂光 自由基產生劑’係指藉由照射能量線可引發自由基聚合之 化合物,作為能量線,可列舉:紫外線、電子束、乂射 線、放射線、高頻波等。作為光自由基產生劑可列舉: 苯乙酮系光自由基產生劑、苯偶醯系光自由基產生劑、二 苯甲酮系光自由基產生劑、噻噸鲖系光自由基產生劑、醯 基氧化膦系光自由基產生劑等。作為光自由基產生劑,可 僅使用一種,亦可併用2種以上。 作為上述苯乙酮系光自由基產生劑,例如可列舉·二乙 氧基苯乙嗣、2-羥基-2-甲基-1-苯基丙烷_丨_酮、4,_異丙基_ 2-羥基-2-曱基苯丙酮、2_羥基甲基_2_甲基苯丙酮、2,2-二 曱氧基-1,2-二苯基乙烷_丨_酮、對二甲胺基笨乙酮、對第 二丁基二氯苯乙酮、對第三丁基三氣苯乙酮、對疊氮亞苄 基苯乙輞、1-羥基環己基苯基酮、2_甲基(曱硫基)笨 基]-2-嗎啉基丙酮_;[、2_节基_2_二甲胺基嗎啉苯基) 丁酮-1、安息香、安息香甲醚、安息香乙醚、安息香異丙 醚、安息香正丁醚、安息香異丁醚、2_羥基_2_曱基―丨-^-乙稀基-(1-曱基乙烯基)笨基]丙酮之募聚物等。 作為上述本偶醯糸光自由基產生劑’例如可列舉:二笨 乙一嗣(亦稱為本偶醯)、雙(4-甲氧基苯基)乙二酮(亦稱為 茴香偶醯)等。 作為上述一苯曱酮糸光自由基產生劑’例如可列舉:_ 苯甲酮、鄰苯甲醯苯曱酸曱酯、米其勒酮、4,4,_雙(二乙 154534.doc 201140243 4~苯f醯基_4·_甲基 ,例如可列舉 2-氯。塞嘲鲷、 :噻噸 2-異丙 胺基)二苯甲酮、4,4’-二氯二苯甲酮 —本硫&$等。 作為上述噻噸酮系光自由基產生劑 酮、2-甲基噻噸酮、2-乙基噻噸酮、 基°塞嘲酮、2,4 -二乙基喧嘴酮等。 ΟIn the case of the unit shown, in addition to the alkoxy group represented by the formula (la) to (4a), 154534.doc _ 14· 201140243 decane compound or dentate decane compound, Hydrolysis condensation of an alkoxydecane compound or a dentate decane compound represented by the above formula (5 a): [Chem. 13] E-Si-fx5]3 (5 a) (wherein E and the above formula (5) has the same meaning, and χ5 represents a halogen atom or an alkoxy group having 1 to 4 carbon atoms). Examples of the alkoxydecane compound or the halogenated decane compound represented by the above formula (5a) include 3,4·epoxybutyltrimethoxydecane, 2-glycidoxypropyltrimethoxydecane, and 3 • glycidoxypropyl trimethoxy decane, 2-glycidoxy 丨 曱 曱 曱 乙基 ethyl trimethoxy decane, 3-glycidoxy propyl triethoxy decane, 2 _ (3, 4 _ Epoxycyclohexyl)ethyltrimethoxydecane, 2-(3,4-epoxycyclohexyl)ethyltriethoxydecane, 3,4-epoxycyclohexyltrimethoxynonane, 3,4-ring Oxycyclohexyltriethylsulfanyl decane, 2-(3,4-epoxy-4-mercaptocyclohexyl)propyltrimethoxy decane, and the like. In the case where the polyoxyalkylene compound of the present invention is obtained by a hydrolysis condensation reaction of an alkoxydecane compound or a dentate decane compound, the method may leave a sulphur-based alcohol group. Since the storage stability of the photosensitive resin composition is lowered, it is preferred to cap the stanol group. In the case of capping the stanol group, the following method can be employed: a method for alkylating a trimethyl hydrazine with trimethylchlorodecane or hexamethylene diazoxide; using a formic acid ester, a raw acetic acid vinegar, and a fourth Alkoxylated toluene ketones 15, carbonic acid g, etc. Hydrolyzability 154534.doc -15- 201140243 A method of alkoxylation of an ester compound. Next, 'the photoradical generator of the invention' is a photoradical generator which refers to a compound which initiates radical polymerization by irradiation of an energy ray. Examples of the energy ray include ultraviolet rays, electron beams, and ruthenium. Rays, radiation, high-frequency waves, etc. Examples of the photoradical generator include an acetophenone photoradical generator, a benzoin photoradical generator, a benzophenone photoradical generator, and a thioxanthene photoradical generator. A fluorenylphosphine oxide-based photoradical generator or the like. As the photo-radical generating agent, one type may be used alone or two or more types may be used in combination. Examples of the acetophenone-based photoradical generator include diethoxy phenethyl hydrazine, 2-hydroxy-2-methyl-1-phenylpropane hydrazine ketone, and 4, isopropyl group. 2-hydroxy-2-mercaptopropiophenone, 2-hydroxymethyl-2-methylpropiophenone, 2,2-dimethoxy-1,2-diphenylethane-nonanone, p-dimethylene Amino acetophenone, p-tert-butyldichloroacetophenone, p-tert-butyltrisacetophenone, p-azidobenzylidene phenylacetone, 1-hydroxycyclohexyl phenyl ketone, 2-A (曱 thio) phenyl]-2-morpholinylacetone _; [, 2 _ benzyl 2 dimethylaminomorpholine phenyl) butanone-1, benzoin, benzoin methyl ether, benzoin ethyl ether, Concentrates of benzoin isopropyl ether, benzoin n-butyl ether, benzoin isobutyl ether, 2_hydroxy-2_mercapto-oxime-^-ethlyl-(1-indolylvinyl)phenyl]acetone. Examples of the above-mentioned priming photo-radical generating agent' include, for example, dip-ethyl oxime (also known as oxime) and bis(4-methoxyphenyl)ethanedione (also known as fentanyl). Wait. Examples of the above-mentioned benzophenone oxime-based radical generating agent include benzophenone, phthalic acid phthalic acid ester, mithicone, and 4,4, _ double (diethyl 154534.doc 201140243) 4~ Benzene fluorenyl _4. _ methyl group, for example, 2-chloro. Sesame, thioxanth-2-isopropenyl)benzophenone, 4,4'-dichlorobenzophenone- Ben Sulphur & $ et al. Examples of the thioxanthone-based photoradical generator ketone, 2-methylthioxanthone, 2-ethylthioxanthone, ketone ketone, and 2,4-diethylpyrone. Ο

作為上述醯基氧化膦系光自由基產生劑,例如可列舉, 甲基苯甲醯基二苯基氧化膦、2,4,6_三甲基苯甲賴二 苯基氧化膦、2,4,6-三甲基苯甲醯基苯基亞膦酸甲醋等的 醯基氧化膦,、光自*基產生劑;雙(2,4,6•三甲基苯甲日酿基早 苯基氧化膦、雙(2,6-二甲氧基苯甲醯基)_2,4,4_三甲基戍基 氧化膦等雙醯基氧化膦系光自由基產生劑。 土 於使本發明之感光性樹脂組合物硬化而用作有機薄膜電 晶體用閘極絕緣膜之情形時,作為上述光自由基產生劑, 就可獲得高f荷遷移率方面而言’較佳為醒基氧化鱗系光 自由基產生劑,更佳為單醯基氧化膦系光自由基產生劑, 最佳為2,4,6-三甲基苯甲醯基二苯基氧化膦。於併用2種以 上之光自由基產生劑之情形時,較佳為其中至少丨種為醯 基氧化膦系光自由基產生劑。 又於使本發明之感光性樹脂組合物硬化而用作透鏡、 光波導等之透明材料之情形時,作為上述光自由基產生 劑,就可獲得透明性較高之硬化物方面而言,較佳為苯乙 酮系光自由基產生劑及醯基氧化膦系光自由基產生劑,更 佳為苯乙酮系光自由基產生劑,最佳為!_羥基環己基苯基 酮。於併用2種以上之光自由基產生劑之情形時,較佳為 154534.doc -17· 201140243 其中至少1種為苯乙酮系光自由基產生劑。 本發明之感光性樹脂组合物中之光自由基產生劑之含量 雖然根據光自由某產哇南丨# # & , ^ 座生j之種類、本發明之感光性樹脂組 合物中之自由基聚合性基之含晋、、、壬At Θ綠 3 ^ /舌性旎I線之種類及強 度^而有所變化’但相對於本發明之聚々氧烧化合物ι〇〇 質量份,較佳為O.NiO質量份,更佳為02〜7質量份,最佳 為0.3〜5質量份。若上述光自由基產生劑之含量未達〇1質 量份,則存在硬化不充分之情形,若超過1〇質量份,則存 在不僅無法獲得與調配量相稱之效果,反而對耐熱性、透 明性等產生不良影響之情形。 本發明之感光性樹脂組合物進而亦可含有有機溶劑。作 為此種有機溶劑,例如可列舉:苯、二甲苯、甲苯、乙 笨笨乙烯、二甲笨、二乙苯、四氫化萘等芳香族煙化合 物;戊烷、異戊烷、己烷、異己烷、庚烷、異庚烷、辛 烷、異辛烷、壬烷、異壬烷、癸烷、異癸烷、異十二烷、 環己烷、曱基環己烷、薄荷烷、十氫萘等飽和烴化合物; —乙醚、二丙醚、二異丙醚、二丁醚、二乙二醇二甲醚、 二乙二醇二乙醚、四氫呋喃、-二呤烷等醚系溶劑·,丙 酮、曱基乙基酮、曱基異丁基酮、二乙基酮、二丙基鋼、 曱基戊基酮、環己酮等酮系溶劑;乙酸乙酯、乙酸曱_、 乙酸丁酯、乙酸丙酯、乙酸環己酯等酯系溶劑;丙二醇單 甲趟乙酸酯、乙二醇單乙醚乙酸酯、二丙二醇曱醚乙酸 酉曰、一乙二醇單乙醚乙酸酯等燒二醇酯系溶劑。該等溶劑 可單獨使用,或將2種以上組合使用。 154534.doc -18- 201140243 於藉由塗佈法或印刷法來使用本發明之感光性樹脂組合 物之情形時,上述有機溶劑之含量相對於本發明之聚石夕氧 烧化合物1〇〇質量份,較佳為5〜200質量份,更佳為ι〇〜ι〇〇 質量份。Examples of the fluorenyl phosphine oxide-based photoradical generator include methyl benzhydryl diphenyl phosphine oxide, 2,4,6-trimethyl phenyl lysine diphenyl phosphine oxide, and 2, 4 , a fluorenylphosphine oxide such as 6-trimethylbenzimidylphosphonium methacrylate or the like, a light-based generator; bis (2,4,6•trimethylbenzoic acid-based early benzene) A bis-indenylphosphine oxide-based photoradical generator such as phosphine oxide or bis(2,6-dimethoxybenzylidene)-2,4,4-trimethylphosphonium phosphine oxide. When the photosensitive resin composition is cured and used as a gate insulating film for an organic thin film transistor, as the photoradical generating agent, it is preferable to obtain a high f-load mobility. The photoradical generator is more preferably a monodecylphosphine oxide photoradical generator, and is preferably 2,4,6-trimethylbenzimidyldiphenylphosphine oxide. Two or more kinds are used in combination. In the case of a photo-radical generator, at least one of them is a mercaptophosphine oxide-based photoradical generator. The photosensitive resin composition of the present invention is cured to be used as a lens or a light. In the case of a transparent material such as a conductive material, it is preferred that the photo-radical generating agent is a cured product having high transparency, and is preferably an acetophenone-based photoradical generator and a fluorenylphosphine oxide-based light. The radical generator, more preferably an acetophenone-based photoradical generator, is preferably hydroxycyclohexyl phenyl ketone. When two or more photoradical generators are used in combination, it is preferably 154534. Doc -17· 201140243 At least one of them is an acetophenone-based photoradical generator. The content of the photo-radical-generating agent in the photosensitive resin composition of the present invention is based on the light-free production of wow-nan 丨## & , ^ The type of the seat j, the type of the radical polymerizable group of the photosensitive resin composition of the present invention, and the type and strength of the 壬At Θ green 3 ^ / lingual 旎I line 'However, it is preferably O.NiO parts by mass, more preferably 02 to 7 parts by mass, most preferably 0.3 to 5 parts by mass, based on the parts by mass of the polyoxo-oxygen compound ι 本 of the present invention. If the content of the generating agent is less than 1 part by mass, there is a case where the hardening is insufficient, and if In the case of 1 part by mass, it is not possible to obtain an effect which is commensurate with the amount of the compound, and may adversely affect heat resistance, transparency, etc. The photosensitive resin composition of the present invention may further contain an organic solvent. Examples of the solvent include aromatic benzene compounds such as benzene, xylene, toluene, ethylene stupid ethylene, dimethyl benzene, diethylbenzene, and tetrahydronaphthalene; pentane, isopentane, hexane, isohexane, and heptane; , isopentane, octane, isooctane, decane, isodecane, decane, isodecane, isododecane, cyclohexane, nonylcyclohexane, menthane, decahydronaphthalene, etc. a compound; an ether solvent such as diethyl ether, dipropyl ether, diisopropyl ether, dibutyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, tetrahydrofuran or dioxane, acetone, thiol Ketone solvents such as ketone, decyl isobutyl ketone, diethyl ketone, dipropyl steel, decyl amyl ketone, cyclohexanone; ethyl acetate, cerium acetate _, butyl acetate, propyl acetate, Ester solvent such as cyclohexyl acetate; propylene glycol monomethyl acetate, ethylene glycol monoethyl ether Glycol ester solvents burn ester, dipropylene glycol ether acetate unitary said Yue, an ethylene glycol monoethyl ether acetate. These solvents may be used singly or in combination of two or more. 154534.doc -18- 201140243 In the case where the photosensitive resin composition of the present invention is used by a coating method or a printing method, the content of the above organic solvent is relative to the mass of the polysulfide compound of the present invention. The portion is preferably 5 to 200 parts by mass, more preferably 1 part by mass to 1 part by mass.

本發明之感光性樹脂組合物,除上述有機溶劑之外,可 視需要調配光敏劑、塑化劑、觸變賦予劑、光酸產生劑、 熱酸產生劑、分散劑、消泡劑、顏料、染料等任意成分。 該等任意成分之調配量相對於本發明之聚矽氧烷化合物 100質量份,較佳為合計o.ooiq質量份。 本發明之感光性樹脂組合物於在基板等對象物上形成本 發明之感光性樹脂組合物之層後,藉由照射活性能量線照 射而硬化Φ成本發明之感光性樹脂組合物之層的方法並 無特別限制,例如可使用浸塗、流塗、刷塗、喷塗、擠麼 塗敷旋塗、I塗、棒塗等,若藉由網版塗敷或輕轉印等 方法則可形成圖案化之膜。作為形成本發明之感光性樹脂 組合物之層的對象物,並無特別限制,根據用途可使用晶 石夕基板'玻璃基板'金屬板、塑膠板等。對象物上所形成 之本發明之感光性樹脂組合物之層的厚度根據用途而有所 不同於用作半導體兀件之絕緣膜或有機薄膜電晶體之間 極、邑緣膜之f月形時以1() nm〜1G μιη為標準,於料光波導 之芯部分之情形時以^200 μηι為標準。 於本發明之感光性樹脂組合物含有有機溶劑之情形時, 於形成本發明之感光性樹脂組合物之層後,進行加熱處理 (有時無為預Μ烤)’以除去層巾之有機溶劑。加熱處理之 I54534.doc 19 201140243 條件係根據所使用之有機溶劑之沸點或蒸汽壓、本發明之 感光性樹脂組合物之層的厚度、形成層之對象物之耐熱溫 度而適當選擇’以於60〜140°C下加熱處理30秒〜1〇分鐘為 標準。 作為對感光性樹脂組合物之層照射活性能量線的光源, 可列舉超高壓水銀燈、Deepuv燈、高壓水銀燈、低壓水 銀燈、金屬齒化物燈、準分子雷射等,該等光源係根據光 自由基產生劑或敏化劑之感光波長而適當選擇。活性能量 線之照射能量係根據感光性樹脂組合物之層的厚度或光自 由基產生劑之種類或使量而適當選擇。 雖然感光性樹脂組合物之層藉由照射活性能量線會發生 硬化,但亦可進行加熱處理(有時稱為後烘烤),以提昇硬 化物之層與基板等對象物之密接性。此種加熱處理較佳為 於氮氣、氦氣、氬氣等惰性氣體之環境下,且於60〜200<t 之溫度下進行1分鐘〜2小時。 由本發明之感光性樹腊組合物獲得之塗膜可進行光微影 蝕刻,可用作負型光阻(尤其是永久光阻)。於將本發明之 感光性樹脂組合物用作負型光阻之情形時,於對將本發明 2 2光性樹脂組合物塗佈至基板上而形成之塗膜照射活性 ^量線之情形時’可於利用光罩被覆感光性樹脂組合物之 =、並达擇性地照射活性能量線後,使遮光部分(未硬化 部Γ:有機溶劑或顯影液等中溶解、分散而除去(有時稱 為’’’’員=)’而形成圖案化之硬化膜。作為使遮光部分溶 解'分散之有機溶劑’例如可列冑:驗性水溶液、酸性水 154534.doc 20· 201140243 溶液、丙酮、甲基乙基酮、甲基異丁基酮、乙醇、異丙 醇正丙醇、本、丙一醇單曱醚、丙二醇單甲謎乙酸醋、 乙酸乙酯、乙酸丁酯、曱苯、鄰二甲苯、間二曱苯、對二 甲苯、1,3,5-三甲基苯、1,3,4-三甲基苯等。 藉由本發明之感光性樹脂組合物而獲得之硬化膜由於透 明性、絕緣性、尚折射率、耐熱性、耐候性、财化學品性 優異,故而可用作led等之密封材料,光波導、光學透 0 鏡、半導體裝置之絕緣膜。尤其是用作電晶體之閘極絕緣 膜之情形時載子被捕獲而使電荷遷移率降低之問題較小, 可極佳地用作有機薄膜電晶體之閘極絕緣膜。 [實施例] 以下,列舉實施例及比較例進一步說明本發明,但本發 明並不限定於該等。 [製造例A :聚矽氧烷化合物A之製造] 於具有攪拌器、溫度計及回流器之反應容器中,添加3_ 〇 甲基丙烯醯氧基丙基三甲氧基矽烷124 2 g(0 5莫耳)、苯基 二甲氧基矽烷39.7 g(〇_2莫耳)、二甲基二甲氧基矽烷132 2 g(l.l莫耳)、二苯基二甲氧基矽烷75 3 g(〇2莫耳)及作為溶 劑之1· 丁醇300 g。攪拌並加熱至川它後,滴加〇12%之磷 酸水溶液100份,進而於80t下反應i小時。添加甲苯3〇〇 g後,停止攪拌,將分離之含水層除去。利用水1〇〇〇 g清 洗甲苯層3次後’於氮氣流下且於4〇t:下進行減壓蒸館除 去溶劑。於其中添加原甲酸三乙酯300 g,於1301下處理 154534.doc -21 · 201140243 1小時後,於氮氣流下且於80°c下減壓蒸餾除去未反應之 原曱酸三乙酯等揮發性成分,而獲得本發明之聚矽氧烷化 合物A。藉由GPC進行分析,結果質量平均分子量為 75 00,藉由1H-NMR(核磁共振氫譜)進行分析,結果未檢 測出矽烷醇基。 [製造例B〜I:聚矽氧烷化合物B〜I之製造] 除於製造例A中,使用表1所表示之烷氧基矽烷化合物以 外進行與製造例A相同之操作,並合成表1所表示之聚矽氧 烷化合物B〜I。表t之數值表示烷氧基矽烷化合物之反應 莫耳比。表1之聚矽氧烷化合物中,聚矽氧烷化合物A〜E 為本發明之聚矽氧烷化合物,聚矽氧烷化合物F〜I為用於 比較之聚石夕氧烧化合物。又,將質量平均分子量及碎烧醇 基含量之分析結果示於表2。 [表1] 聚矽氧烷化合物 A B C D E F G Η I 3-甲基丙烯醯氧基丙基三曱氧基矽烷 25 25 25 15 15 - - - 苯基三曱氧基矽烷 10 10 25 15 70 10 10 10 10 二甲基二曱氧基矽烷 55 54 20 20 5 55 53 55 55 二苯基二甲氧基矽烷 10 10 30 50 10 10 10 10 10 2-(3,4-環氧環己基)乙基三曱氧基矽烷 - 1 - - - 25 - - - 3-(縮水甘油氧基丙基)乙基三曱氧基矽烷 25 乙烯基曱基二甲氧基矽烷 - - - - - - 25 - - 曱基二乙氧基矽烷 25 - 154534.doc -22- 201140243 [表2]In the photosensitive resin composition of the present invention, in addition to the above organic solvent, a photosensitizer, a plasticizer, a thixotropic agent, a photoacid generator, a thermal acid generator, a dispersant, an antifoaming agent, a pigment, or the like may be formulated as needed. Any component such as a dye. The amount of the optional components is preferably 0. ooiq by mass based on 100 parts by mass of the polysiloxane compound of the present invention. The photosensitive resin composition of the present invention is a method of forming a layer of the photosensitive resin composition of the present invention on a substrate such as a substrate, and then curing the layer of the photosensitive resin composition of the present invention by irradiation with an active energy ray. There is no particular limitation, for example, dip coating, flow coating, brush coating, spray coating, spin coating, I coating, bar coating, etc. can be used, if formed by screen coating or light transfer, etc. Patterned film. The object to form the layer of the photosensitive resin composition of the present invention is not particularly limited, and a crystal plate, a glass plate, a metal plate or the like can be used depending on the application. The thickness of the layer of the photosensitive resin composition of the present invention formed on the object is different from that of the insulating film or the organic thin film transistor used for the semiconductor element, and the thickness of the edge film of the semiconductor film. Taking 1() nm~1G μη as the standard, in the case of the core portion of the optical waveguide, it is based on ^200 μηι. When the photosensitive resin composition of the present invention contains an organic solvent, the layer of the photosensitive resin composition of the present invention is formed and then subjected to heat treatment (may not be pre-baked) to remove the organic solvent of the layered towel. Heat treatment I54534.doc 19 201140243 The condition is appropriately selected according to the boiling point or vapor pressure of the organic solvent to be used, the thickness of the layer of the photosensitive resin composition of the present invention, and the heat-resistant temperature of the object forming the layer. Heat treatment at ~140 ° C for 30 seconds ~ 1 〇 minutes as standard. Examples of the light source that irradiates the active energy ray to the layer of the photosensitive resin composition include an ultrahigh pressure mercury lamp, a Deepuv lamp, a high pressure mercury lamp, a low pressure mercury lamp, a metal toothed lamp, an excimer laser, etc., and the light source is based on photoradicals. The photosensitive agent of the generating agent or sensitizer is appropriately selected. The irradiation energy of the active energy ray is appropriately selected depending on the thickness of the layer of the photosensitive resin composition or the kind or amount of the photo-based radical generator. Although the layer of the photosensitive resin composition is hardened by irradiation of the active energy ray, it may be subjected to heat treatment (sometimes referred to as post-baking) to improve the adhesion between the layer of the hard layer and the object such as the substrate. The heat treatment is preferably carried out in an atmosphere of an inert gas such as nitrogen, helium or argon at a temperature of 60 to 200 < t for 1 minute to 2 hours. The coating film obtained from the photosensitive wax composition of the present invention can be photolithographically etched and used as a negative photoresist (especially permanent photoresist). When the photosensitive resin composition of the present invention is used as a negative-type photoresist, when the coating film formed by applying the 2 2 optical resin composition of the present invention onto a substrate is irradiated with an active amount line, 'After coating the photosensitive resin composition with a mask, and selectively irradiating the active energy ray, the light-shielding portion (unhardened portion Γ: organic solvent, developer, etc. is dissolved, dispersed, and removed (sometimes A patterned hardened film is formed by ''''person=)'. As an organic solvent for dissolving and dispersing the light-shielding portion, for example, an aqueous test solution, an acidic water 154534.doc 20·201140243 solution, acetone, Methyl ethyl ketone, methyl isobutyl ketone, ethanol, isopropanol n-propanol, present, propanol monodecyl ether, propylene glycol monomethyl acetate, ethyl acetate, butyl acetate, toluene, o-di Toluene, m-diphenylene oxide, p-xylene, 1,3,5-trimethylbenzene, 1,3,4-trimethylbenzene, etc. The cured film obtained by the photosensitive resin composition of the present invention is transparent Properties, insulation, refractive index, heat resistance, weather resistance, chemical properties Different, it can be used as a sealing material for led, etc., an optical waveguide, an optical transmissive mirror, an insulating film for a semiconductor device, especially when used as a gate insulating film of a transistor, the carrier is trapped to lower the charge mobility. The problem is small, and it can be excellently used as a gate insulating film of an organic thin film transistor. [Examples] Hereinafter, the present invention will be further described by way of examples and comparative examples, but the present invention is not limited thereto. Example A: Production of Polyoxane Compound A] In a reaction vessel equipped with a stirrer, a thermometer and a reflux, 3 〇 methacryloxypropyltrimethoxy decane 124 2 g (0 5 mol) was added. , phenyl dimethoxy decane 39.7 g (〇 2 mol), dimethyl dimethoxy decane 132 2 g (ll mole), diphenyl dimethoxy decane 75 3 g (〇 2 Mo 3) Butanol 300 g as a solvent. After stirring and heating to Sichuan, 100 parts of a 12% aqueous phosphoric acid solution was added dropwise, and further reacted at 80 t for 1 hour. After adding 3 〇〇g of toluene, stirring was stopped. The separated aquifer is removed. The toluene layer is washed 3 times with water 1 〇〇〇g after nitrogen The solvent was removed under reduced pressure at 4 〇t:, 300 g of triethyl orthoformate was added thereto, and 154534.doc -21 · 201140243 was treated at 1301 for 1 hour, and then under a nitrogen stream at 80 ° C. The volatile component such as unreacted triethyl orthosilicate was distilled off under reduced pressure to obtain the polyoxymethane compound A of the present invention. The mass average molecular weight was 75 00 by GPC analysis, and 1H-NMR was used. (Nuclear magnetic resonance spectroscopy) analysis revealed that no decyl alcohol group was detected. [Production Example B to I: Production of Polyoxane Compound B to I] In the production example A, the alkoxy group shown in Table 1 was used. The same operation as in Production Example A was carried out except for the decane compound, and the polyoxy siloxane compounds B to I shown in Table 1 were synthesized. The value of the table t indicates the reaction of the alkoxydecane compound. Among the polyoxyalkylene compounds of Table 1, the polyoxyalkylene compounds A to E are the polyoxyalkylene compounds of the present invention, and the polyoxyalkylene compounds F to I are the polyoxanthene compounds for comparison. Further, the analysis results of the mass average molecular weight and the calcined alcohol group content are shown in Table 2. [Table 1] Polyoxane compound ABCDEFG Η I 3-Methyl propylene methoxy propyl trimethoxy decane 25 25 25 15 15 - - - Phenyl trimethoxy decane 10 10 25 15 70 10 10 10 10 dimethyl dimethoxy decane 55 54 20 20 5 55 53 55 55 diphenyl dimethoxy decane 10 10 30 50 10 10 10 10 10 2-(3,4-epoxycyclohexyl)ethyl three曱 矽 - - - 1 - - - 25 - - - 3 - (glycidoxypropyl) ethyl trimethoxy decane 25 - vinyl methoxy dimethoxy decane - - - - - - 25 - - 曱Diethoxy decane 25 - 154534.doc -22- 201140243 [Table 2]

質量平均分子量 碎烧醇基 聚矽氧烷化合物A 7500 未檢出 聚矽氧烷化合物B 7600 未檢出 聚矽氧烷化合物C 5600 未檢出 聚矽氧烷化合物D 3200 未檢出 聚矽氧烷化合物E 8300 未檢出 聚矽氧烷化合物F 7600 未檢出 聚矽氧烷化合物G 7500 未檢出 聚矽氧烷化合物Η 7700 未檢出 聚矽氧烷化合物I 7900 未檢出 [實施例1〜7及比較例1〜5] 使用聚矽氧烷化合物A〜I、下述丙烯酸酯A及B、作為光 〇 自由基產生劑之雙(2,6-二甲氧基苯曱醯基)苯基氧化膦(以 下稱為光自由基產生劑1)、1-羥基環己基苯基酮(以下稱為 光自由基產生劑2)、作為光酸產生劑之[4-(2-氯代基-4-苯 甲醯基苯硫基)苯基雙(4-氯苯基)銕六氟銻酸鹽]、作為矽 氫化觸媒之鉑-二乙烯基四甲基二矽氧烷錯合物、及作為 溶劑之乙酸丁酯,根據表3之組成製備實施例1〜7及比較例 1〜5之感光性樹脂組合物或熱硬化性樹脂組合物。 154534.doc -23- 201140243 [化 14] 0Mass average molecular weight, calcined alcohol-based polyoxyalkylene compound A 7500, no polyoxyalkylene compound B 7600, no polyoxyalkylene compound C 5600, no polyoxyalkylene compound D 3200, no polyoxyl Alkane compound E 8300 No polyoxyalkylene compound F 7600 was detected. Polyoxyalkylene compound G 7500 was not detected. Polyoxyalkylene compound was not detected. 700 7700 No polyoxyalkylene compound I 7900 was detected. [Examples] 1 to 7 and Comparative Examples 1 to 5] Poly(2,6-dimethoxybenzoquinone) as a ruthenium radical generator using polyoxy siloxane compounds A to I, acrylates A and B described below Phenylphosphine oxide (hereinafter referred to as photoradical generator 1), 1-hydroxycyclohexyl phenyl ketone (hereinafter referred to as photoradical generator 2), [4-(2-chloro) as a photoacid generator Peptidyl-4-benzylidene phenylthio)phenylbis(4-chlorophenyl)phosphonium hexafluoroantimonate], platinum-divinyltetramethyldioxane as a hydrogenation catalyst And a butyl acetate as a solvent, and the photosensitive resin compositions of Examples 1 to 7 and Comparative Examples 1 to 5 were prepared according to the composition of Table 3 or thermally hardened. Resin composition. 154534.doc -23- 201140243 [Chem. 14] 0

II ch2=ch-c-o-ch2chII ch2=ch-c-o-ch2ch

丙烯酸酯A ο ιι CHf〇—C—CH=CH2 ΟAcrylate A ο ιι CHf〇—C—CH=CH2 Ο

II c2h5—c-ch2-o—c—ch=ch2 0II c2h5-c-ch2-o-c-ch=ch2 0

II CH^O—C—CH=CH2 [表3]II CH^O—C—CH=CH2 [Table 3]

丙烯酸酯B 實施例 比較例 1 2 3 4 5 6 7 1 2 3 4 5 聚矽氧烷化合物A 100 - 100 聚矽氧烷化合物B - 100 - 100 - - - - - - - - 聚石夕氧烧化合物C - 100 聚矽氧烷化合物D 100 聚石夕氧烧化合物E - 100 聚矽氧烷化合物F - - - - - - - 100 - - - - 聚石夕氧烧化合物G 50 - - - 聚矽氧烷化合物Η - 50 - - - 聚矽氧烷化合物I - - - - - - - - - 100 - - 丙烯酸酯A 100 丙稀酸醋B 100 光自由基產生劑1 5 5 光自由基產生劑2 - - 5 5 5 5 5 - - - 5 5 光酸產生劑 3 - 3 - - 矽氫化觸媒 - 0.001 - - - 溶劑 150 150 150 150 150 150 150 150 150 150 100 100 154534.doc -24- 201140243 <感光性樹脂組合物作為閘極絕緣膜之評價> 為了對上述實施例及比較例所獲得之感光性樹脂組合物 或熱硬化性樹脂組合物作為閘極絕緣膜之特性進行評價, 藉由如下方式製作如圖1所表示之有機薄膜電晶體。 於玻璃基板6上蒸鏡鉻(Cr) ’形成寬度2 mm、厚度約100 nm之萃取電極(extraction electrode)作為閘極電極4。於其 上以膜厚成為約1 μη!之方式旋塗實施例1、2及比較例1之 0 感光性樹脂組合物及比較例2之熱硬化性樹脂組合物旋塗 並進行風乾後,於實施例丨及2以及比較例丨中利用高壓水 銀燈照射500 mj/cm2,於比較例2中於氮氣環境了且於 150°C下加熱2小時,藉此使該等組合物硬化而形成閘極絕 緣膜5。於閘極絕緣膜5上以乾燥後之膜厚成為3〇 nm之方 式旋塗聚(3 -己基)噻吩之二甲苯溶液並進行風乾,而形成 有機半V體膜1。為了使聚(3 -己基)嗟吩活性化,而於氮氣 衣士兄下且於150C下退火處理30分鐘。藉由於有機半導體 〇 膜1上蒸錢金(Au)而形成通道寬度2 mm、厚度約3 〇 nm且通 道長度100 μΐη之源極電極2及汲極電極3,關於實施例丨及2 及比較例1及2,分別製作12個底部閘極/頂部接觸型之有 機薄膜電晶體。 針對實靶例1及2以及比較例1及2之有機薄骐電晶體,使 用半導體參數分析儀(Keithley公司製造,產品名SCS42〇〇) 測定傳輸特性,算出電荷遷移率μ。再者,電荷遷移率^係 由下述式所定義,具體而言,係根據以汲極電流Id之絕對 值之平方根為縱軸且以閘極電壓Vg為橫軸繪圓時之飽和區 I54534.doc -25- 201140243 域之圖的斜率求出電荷遷移率μ。測定係於氮氣環境下且 於遮光狀態下進行。電荷遷移率μ設為成功測定傳輸特性 之有機薄膜電晶體之平均值,因電流洩漏而未能測定傳輸 特性之有機薄膜電晶體之數設為不良品數。將結果示於表 4 〇 [數1] ID=WCp(VG-VT)2/2L Id ·〉及極電流 W:電晶體之通道寬度 L:電晶體之通道長度 C :閘極絕緣膜之靜電電容 Vg :閘極電壓 VT :電晶體之臨界電壓 μ :電荷遷移率 [表4] 電荷遷移率(μ) 不良品數 實施例1 5.3χ10'3 0/12 實施例2 3.8χ10'3 0/12 比較例1 8.7xl〇·4 0/12 比較例2 2.3 χ ΙΟ'4 6/12 <感光性樹脂組合物之熱著色性評價> 於2.5 cm見方之玻璃基板上,以乾燥後之膜厚成為約 500 μιπ之方式藉由旋塗法塗佈實施例3〜7以及比較例1及 154534.doc -26- 201140243 Ο 3 5之感光性樹脂組合物,使溶劑揮發。將該試驗片於 C下力熱處理3〇分鐘。於加熱處理後之玻璃基板上部 設__之光I,利用水銀燈以照 射紫外線繼而’將該試驗片浸潰於加入有乙酸乙酯之燒 在中'合解除去未硬化部分,將風乾物用作加熱著色性評 彳貝用之试驗片。試驗片均為無色透明,硬化物於波長837 nm下之折射率如表6所示。將該試驗片放人1贼之恨溫槽 t ’’主過15天後取出,目測硬化物之著色,根據下述評價 標準對熱著色性進行評價。將結果示於表$。 <評價標準> ◎ ·未見著色’熱著色性較低。 〇 :稍有著色’熱著色性稍高。 △:明顯著色,熱著色性較高。 ❹ I54534.doc :··有無法透過硬化物識別文字之綠之程度的著色,熱 者色性非常高。 [表5] 實施例 折射率 性 實施例3 1.515 實施例4 1.513 實施例5 1.557 實施例6 1.566 實施例7 「1.520 比較例1 1.512 " 比較例3 1.511 比較例4 1.506 比較例5 1.550 -27- 201140243 如表4之結果所示,使本發明之感光性樹脂組合物硬化 而獲得之閘極絕緣膜可獲得高電荷遷移率。相對於此,使 含有具有環氧基之聚矽氧烷化合物與光酸產生劑之感光性 樹脂組合物硬化而獲得之閘極絕緣膜(比較例丨)’及使含有 具有乙烯基之聚矽氧烷化合物、具有SiH基之聚矽氧烷化 合物及矽氫化觸媒(鉑觸媒)之熱硬化性樹脂組合物硬化而 獲得之閘極絕緣膜(比較例2)僅獲得低電荷遷移率,尤其是 後者存在不良品率較高之問題。 又,如表5之結果所示,本發明之感光性樹脂組合物可 用作負型光阻,其硬化物之折射率較高,即使於高溫下熱 著色性亦較低(實施例3〜7)。相對於此,使組成與本申請 案之感光性樹脂組合物不同之感光性樹脂組合物硬化而獲 得之硬化物(比較例丨及卜”之熱著色性較高。 此表明,將本發明之感光性樹脂組合物用於透明之高折 射率材料’例如透鏡、光波導等之情形時,即使於高:下 亦可在不失去透明性之情況下使用。 【圖式簡單說明】 人Γ係以由施例1及2、以及比較例1及2之感光性樹脂却 ^勿所獲得之薄膜作為閘極絕緣膜的底部閘極/頂部接角· 里之有機薄膜電晶體之概略剖面圖。 【主要元件符號說明】 有機半導體骐(層) 源極電極 >及極電極 154534.doc •28· 201140243 閘極電極 絕緣層(閘極絕緣膜) 支持體(基板) 4 5 6 ΟAcrylate B Example Comparative Example 1 2 3 4 5 6 7 1 2 3 4 5 Polyoxane Compound A 100 - 100 Polyoxane Compound B - 100 - 100 - - - - - - - - Calcined compound C - 100 polyoxyalkylene compound D 100 polyoxanthene compound E - 100 polyoxy siloxane compound F - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Polyoxyalkylene compound Η - 50 - - - Polyoxane compound I - - - - - - - - - 100 - - Acrylate A 100 Acrylic vinegar B 100 Photo radical generator 1 5 5 Photo radical Producer 2 - - 5 5 5 5 5 - - - 5 5 Photoacid generator 3 - 3 - - Hydrogenation catalyst - 0.001 - - - Solvent 150 150 150 150 150 150 150 150 150 150 100 154534.doc - 24-201140243 <Evaluation of the photosensitive resin composition as the gate insulating film> The photosensitive resin composition or the thermosetting resin composition obtained in the above Examples and Comparative Examples was used as the characteristics of the gate insulating film. Evaluation, by the following method FIG 1 represents the organic thin film transistor. An extraction electrode having a width of 2 mm and a thickness of about 100 nm was formed as a gate electrode 4 by vapor-depositing chromium (Cr) on the glass substrate 6. The photosensitive resin composition of the examples 1 and 2 and the comparative example 1 and the thermosetting resin composition of the comparative example 2 were spin-coated, and the air-dried resin composition of the comparative example 2 was spin-coated, and the air-drying was carried out after the film thickness was about 1 μη. In Examples 丨 and 2 and Comparative Example, 500 mj/cm 2 was irradiated with a high-pressure mercury lamp, and in Comparative Example 2, the atmosphere was heated at 150 ° C for 2 hours, thereby hardening the compositions to form a gate. Insulating film 5. On the gate insulating film 5, a solution of poly(3-hexyl)thiophene in xylene was spin-coated at a film thickness of 3 〇 nm and air-dried to form an organic semi-V body film 1. In order to activate the poly(3-hexyl) porphin, it was annealed at 150 C for 30 minutes under nitrogen gas. The source electrode 2 and the drain electrode 3 having a channel width of 2 mm, a thickness of about 3 〇 nm, and a channel length of 100 μΐ are formed by evaporation of gold (Au) on the organic semiconductor ruthenium film 1, and the examples and comparisons are made. In Examples 1 and 2, 12 bottom gate/top contact type organic thin film transistors were fabricated, respectively. With respect to the organic thin tantalum transistors of the actual target examples 1 and 2 and the comparative examples 1 and 2, the transfer characteristics were measured using a semiconductor parameter analyzer (manufactured by Keithley Co., Ltd., product name: SCS42), and the charge mobility μ was calculated. Furthermore, the charge mobility is defined by the following formula, specifically, the saturation region I54534 when the square root of the absolute value of the drain current Id is the vertical axis and the gate voltage Vg is plotted on the horizontal axis. .doc -25- 201140243 The slope of the domain map is used to determine the charge mobility μ. The measurement was carried out under a nitrogen atmosphere and under a light-shielding state. The charge mobility μ is set to the average value of the organic thin film transistors for which the transfer characteristics are successfully measured, and the number of organic thin film transistors which have failed to measure the transfer characteristics due to current leakage is the number of defective products. The results are shown in Table 4. 〇[Number 1] ID=WCp(VG-VT)2/2L Id ·> and polar current W: channel width of the transistor L: channel length of the transistor C: static of the gate insulating film Capacitance Vg: gate voltage VT: threshold voltage of transistor μ: charge mobility [Table 4] Charge mobility (μ) Number of defective products Example 1 5.3χ10'3 0/12 Example 2 3.8χ10'3 0/ 12 Comparative Example 1 8.7xl〇·4 0/12 Comparative Example 2 2.3 χ 4 '4 6/12 <Evaluation of Thermal Coloring Property of Photosensitive Resin Composition> On a glass substrate of 2.5 cm square, after drying The photosensitive resin compositions of Examples 3 to 7 and Comparative Examples 1 and 154534.doc -26-201140243 Ο 3 5 were applied by spin coating so that the solvent was volatilized by a film thickness of about 500 μm. The test piece was heat-treated at C for 3 minutes. A light I of __ is disposed on the upper portion of the glass substrate after the heat treatment, and a mercury lamp is used to irradiate the ultraviolet ray, and then the test piece is immersed in the sinter which is added with ethyl acetate to remove the unhardened portion, and the air-dried material is used. As a test piece for heating coloring property evaluation. The test pieces were all colorless and transparent, and the refractive index of the cured product at a wavelength of 837 nm is shown in Table 6. The test piece was taken out and the hate of the thief was taken out for 15 days, and the color of the cured product was visually observed, and the heat coloring property was evaluated according to the following evaluation criteria. The results are shown in the table $. <Evaluation Criteria> ◎ - No coloration was observed. 'The heat coloring property was low. 〇 : Slightly colored 'Thermal coloration is slightly higher. △: Significant coloring, high heat coloring property. ❹ I54534.doc :··················································· [Table 5] Example Refractive Index Example 3 1.515 Example 4 1.513 Example 5 1.557 Example 6 1.566 Example 7 "1.520 Comparative Example 1 1.512 " Comparative Example 3 1.511 Comparative Example 4 1.506 Comparative Example 5 1.550 -27 - 201140243 As shown in the results of Table 4, the gate insulating film obtained by curing the photosensitive resin composition of the present invention can obtain a high charge mobility. In contrast, a polyoxyalkylene compound having an epoxy group is obtained. A gate insulating film (Comparative Example) obtained by curing a photosensitive resin composition of a photoacid generator and a polysiloxane compound having a vinyl group, a polyoxyalkylene compound having a SiH group, and hydrogenation of hydrazine The gate insulating film obtained by curing the thermosetting resin composition of the catalyst (platinum catalyst) (Comparative Example 2) only obtains a low charge mobility, and in particular, the latter has a problem that the defective product rate is high. As a result of 5, the photosensitive resin composition of the present invention can be used as a negative photoresist, and the cured product has a high refractive index and is low in heat coloration even at a high temperature (Examples 3 to 7). In this case, the cured product obtained by curing the photosensitive resin composition different from the photosensitive resin composition of the present application has a high heat coloring property (Comparative Example), which indicates that the photosensitive property of the present invention is obtained. When the resin composition is used for a transparent high refractive index material such as a lens, an optical waveguide, or the like, it can be used without losing transparency even if it is high: [Simplified drawing] The photosensitive resin of Examples 1 and 2 and Comparative Examples 1 and 2 was not shown as a schematic cross-sectional view of the organic thin film transistor of the bottom gate/top corner of the gate insulating film. Description of component symbols: Organic semiconductor germanium (layer) source electrode > and electrode 154534.doc •28· 201140243 Gate electrode insulating layer (gate insulating film) Support (substrate) 4 5 6 Ο

G 154534.doc -29-G 154534.doc -29-

Claims (1)

201140243 七、申請專利範圍: 1· 一種感光性樹脂組合物,其含有具有下述通式(1)〜(4)所 表示之單元之聚矽氧烷化合物及光自由基產生劑: [化1] R1 0 un I II 2 H2C=C—C—0—R—S i 03/2 (1) (式中’ R1表示氫原子或甲基,R2表示可具有取代烷基之 碳數1〜5之伸烧基); [化2] R'O'Si03/2 (2) (式中’ R3表示氫原子或碳數丨〜4之烷基); [化3] [R^SiO^ ο) (式中,R表示碳數丨〜6之烷基或碳數5或6之環烷基)·, 〇 [化 4]201140243 VII. Patent application scope: 1. A photosensitive resin composition containing a polyoxyalkylene compound having a unit represented by the following general formulae (1) to (4) and a photo radical generating agent: R1 0 un I II 2 H2C=C—C—0—R—S i 03/2 (1) (wherein R 1 represents a hydrogen atom or a methyl group, and R 2 represents a carbon number which may have a substituted alkyl group of 1 to 5 R2O'Si03/2 (2) (wherein R3 represents a hydrogen atom or an alkyl group having a carbon number of 44); [Chemical 3] [R^SiO^ ο) (wherein, R represents an alkyl group having a carbon number of 6~6 or a cycloalkyl group having a carbon number of 5 or 6), 〇[Chemical 4] (式中,R5表示氫原子或碳數卜4之烷基)。 2·如明求項1之感光性樹脂組合物,其中具有上述通式 .)斤表示之單元之聚石夕氧院化合物,進而具有下述 通式(5)所表示之單元: 154534.doc 201140243 [化5] E-Si〇3/2 ⑹ (式中,E表示具有環氧基之基)。 3.如凊求項!之感光性樹脂組合物,其中具有上述通式 (1) (4)所表示之單元之聚矽氧烧化合物係使下述通式 (la)〜(4a)所表示之烷氧基矽烷化合物或鹵化矽烷化合物 水解縮合而獲得者: [化6] R1 0 u\ II 2 , n2c—c—C—0—R—s i -|-X1 ]3 (la) (式中,R1及R2與上述通式(1)者含義相同,乂,表示鹵素 原子或碳數1〜4之烷氧基); [化7] R30_s㈣(2a) (弋中,R與上述通式(2)者含義相同,χ2表示鹵素原子 或碳數1〜4之烷氧基); [化8] [Rl]rs丨+¾ (3a) (式中,R4與上述通式(3)者含義相同,χ3表示鹵素原子 或*炭數1〜4之烧氧基); [化9](wherein R5 represents a hydrogen atom or an alkyl group having a carbon number of 4). 2. The photosensitive resin composition according to claim 1, wherein the polyoxan compound having the unit represented by the above formula:) is further represented by the following formula (5): 154534.doc 201140243 E-Si〇3/2 (6) (wherein E represents a group having an epoxy group). 3. If you are asking for it! In the photosensitive resin composition, the polyoxosiloxane compound having the unit represented by the above formula (1) (4) is an alkoxydecane compound represented by the following formulas (1a) to (4a) or Hydrolytic condensation of a halogenated decane compound: [Chem. 6] R1 0 u\ II 2 , n2c-c-C-0-R-si -|-X1 ]3 (la) (wherein R1 and R2 are in communication with the above The formula (1) has the same meaning, 乂, represents a halogen atom or an alkoxy group having a carbon number of 1 to 4); [Chem. 7] R30_s(tetra)(2a) (in the formula, R has the same meaning as in the above formula (2), χ 2 And a halogen atom or a carbon number of 1 to 4; * a carbon number of 1 to 4 alkoxy); [Chemical 9] 154534.doc 201140243 (式中π與上述通式(4)者含義㈣,素原子 或碳數1〜4之烷氧基)。 I 組合物,相對於具有上述 份,合古Λ , 平疋之聚矽氧烷化合物100質量 有.1〜10質量份之上迷光自由基產生劑。 Ο154534.doc 201140243 (wherein π and the above formula (4) means (four), a prime atom or an alkoxy group having a carbon number of 1 to 4). The composition of the present invention has a mass percentage of from 1 to 10 parts by mass based on 100 parts by mass of the polyoxazane compound having the above-mentioned composition. Ο 154534.doc154534.doc
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