201138577 六、發明說明： 【發明所屬之技術領域】 、本發明係關於電子零件組裝構造體之製造方法及該方 法所製造的電子零件組裝構造體。 【先前技術】 在先前印刷配線板等之配線基板上，直接組裝〗c晶片 2法’錢时黏合射分散導絲子的異方性導電膜 為廣為人知的方法。 、在使用該異錄導電狀組裝枝中，係在黏貼異方 性導電膜的配線基板上，搭載IC晶片後，使該IC晶片加 壓、加熱，使異方性導電膜硬化，並進行熱壓合組裝。 在1C晶片與配線基板之連接時，需高精度地進行兩者 之位置對準（alignment)。亦即，識別Ic晶片上的對準標記， 及配線基板上的對準標記，並且精密且正媒地進行晶片 及黏貼該1C晶片的配線基板之位置對準，則非常重要。 在此，由識別對準標記之觀點觀之，如第丨圖所示， 係使異方性導電膜10與各IC晶片3〇之大小一致，而配置 於配線基板，以使異方性導電膜1〇與對準標記2〇不致重 疊，或如第2圖所示，使異方性導電獏1〇與冗晶片3〇之 寬度-致’並貼帶。因此，有必要使異方性導電膜合乎各 個形狀並黏貼，而使生產成本降低，又，必須是高精度的 薄膜黏貼裝置。 又’在配線基板上直接組裝1(：晶片的倒裝片組裝中， 201138577 係進行在除了配線基板之對準標記之部分，形成接著劑層 (例如專利文獻1)，不過形成接著劑層之步驟極為繁雜， 會有成本過高的問題。 【先前技術文獻】 【專利文獻】 【專利文獻1】日本特開2007-294575號公報 【發明内容】 【發明欲解決課題】 本發明係解決先前的諸問題，而以達成以下之目的為 課題。亦即，本發明之目的係提供一種電子零件組裝構造 體之製造方法及以該方法所製造之電子零件組裝構造體， 其係經由含粒子薄膜可資識別對準標記。 【解決課題之手段】 解決該課題之手段方面係如以下。亦即， <1>一種電子零件組裝構造體之製造方法，其包含：薄 膜配置步驟，其係在具有對準標記之基材上，配置含粒子 薄膜；壓製步驟，其係使用壓製構件壓製該對準標記之正 上方區域中的含粒子薄膜，使該含粒子薄膜之厚度變薄； 組裝區域劃界步驟，其係根據該含粒子薄膜之厚度較薄的 部分形成於正上方區域的對準標記之位置，進行電子零件 之組裝區域的劃界；及電子零件組裝步驟，其係在該組裝 區域組裝電子零件。 <2>如該<1〉項之電子零件組裝構造體之製造方法，其 201138577 中壓製構件具有半球狀之壓製部。 <3>如該<1>或<2〉項之電子零件組裝構造體之製造 方法，其中壓製構件為可壓製，其係用以覆蓋對準標記。 <4>如該<1>至<3〉項中任一項之電子零件組裝構造 體之製造方法，其中該壓製構件含有聚四氟乙烯。 <5>如該<1〉至<4〉項中任一項之電子零件組裝構造 體之製造方法，其中含粒子薄膜含有熱硬化樹脂，且在電 子零件組裝步驟中，經由該含粒子薄膜，使基材與電子零 件熱壓合。 <6>如該<1>至<5>項中任一項之電子零件組裝構造 體之製造方法，其中對準標記係位於組裝區域内。 <7>如該<1〉至<6>項中任一項之電子零件組裝構造 體之製造方法，其中在電子零件組裝步驟中，係使用含有 彈性體的彈性頭。 <8>—種電子零件組裝構造體，其特徵為藉由如該<1> 至<7>項中任一項之電子零件組裝構造體之製造方法來製 造。 【發明效果】 根據本發明，可解決先前的諸問題，並可達成前述目 的，係提供一種的電子零件組裝構造體之製造方法及由該 方法所製造之電子零件組裝構造體、其係經由含粒子薄膜 可資識別對準標記。 【實施方式】 201138577 (電子零件組裝構造體及其製造方法） 本發明之電子零件組裝構造體之製造方法，至少包 含：薄膜配置步驟、壓製步驟、組裝區域劃界步驟、電子 零件組裝步驟，進一步含有依需要適宜選擇的其他步驟。 本發明之電子零件組裝構造體係指以本發明之電子零 件組裝構造體之製造方法所製造的電子零件組裝構造體， 其具備：具有對準標記之基材、形成於該基材上之含粒子 薄膜、及根據該對準標記之位置而組裝於組裝區域的電子 零件。 <薄膜配置步驟> 該薄膜配置步驟係在具有對準標記的基材上配置含粒 子薄膜的步驟。 «對準標記》 該對準標記方面，只要可使用於基材與電子零件之位 置對準者，則並無特別限制，可依目的而適宜選擇。 該對準標記之形狀方面，並無特別限制，可依目的而 適宜選擇，可例舉例如圓柱狀、半球狀、圓錐狀、角柱狀、 角錐狀、十字狀等。在該等中，以蝕刻或鍍敷所致形成之 容易性之觀點而言，則以圓柱狀為適當。 該對準標記之大小方面，並無特別限制，可依目的適 宜選擇，不過剖面形狀之最大長度（例如在圓柱狀之情形， 係圓柱剖面之圓直徑）較佳為〇.〇5mm至1 mm、更佳為 0.1mm 至 0.6mm、最佳為 0.2mm 至 0.5mm。 該最大長度小於〇.〇5mm時，會有無法讀取標記之情 201138577 形，大於lmm時，會有在對準標呓 之情形〜方面’該最大長度在該最佳图4納入視野 讀取性之觀點而言是有利的。 —内時，就標記 此外，最大長度係指對準標記（存 之直徑或對角線之意。 己之區域） 該對準標記之高度與基板上電路 該對準標記之材質方面，龙 "致等同。 宜選擇’可例舉例如在作為+、+材料、、:限制，可依目的適 在作為芯㈣之銅场敷^㈣之，5上鍍敷鎳/金之物、 «基材》 該基材方面，並無制_，可依目 例舉例如玻璃環氧基板、聚亞胺 1可 基板、PET基板等。 板陶是基板、盼齡紙 «含粒子薄膜》 該含粒子薄膜方面，只要為含有 特別限制，可依目的適宜選擇，可例舉例如含有里= 電膜(ACF)、石夕粒子等的非導電性薄膜(NCF)等/ -異方性導電膜(ACF)- 子 擇 該異：1 生導電膜(ACF)方面’只要至少含有導電性粒 .及黏合劑之薄膜，則並盔牲2, J ”、、特別限制，可依目的適宜選 ―導電性粒子 擇 該導電性粒子方面，並無特別限制，可依目的適宜選 可使用與先前異方性導電接著劑所使用之物有著相同 201138577 平均粒徑為一5—之金屬板子或金屬被 =金屬粒子方面，並無特別限制，可依目_ 以表钻、銅等。在目的為防止該等之表面氧化，亦 有全dr子。再者，亦可使用在表面 頁金屬犬起或以有機物塗覆絕緣皮獏之物。 該金屬被覆_粒子方面’並無❹ =擇’可例舉以鎳、銘、钢等-種以上 狀拉子。同樣地亦可使用在最外表面塗覆金、 再者，亦可使用在表面有金屬 、+子。 膜之物。 有機物塗覆絕緣皮 —黏合劑— 可例==::並丙：限制，可依目的適宜選擇， -非導電:=r酸樹脂等之熱硬化樹脂等。 該非導電性薄膜(NCF)方面， 物，則並無特別限制，可依目的適宜=…夕粒子等之 矽熱硬化性環氧樹脂薄膜等。 k 可例舉例如含 -碎粒子- 該石夕粒子方面，並無㈣_ 不過=量，:之 =’ 區域對準…上方 3拉子溥膜之厚度變薄的步驟。 201138577 此外，在該麼製步驟中’亦可使用複數個壓製構件， 將複數個對準標記之正上方區域中的含粒子薄膜予以總括 的壓製。 «壓製》 該㈣中的廢製力方面，並無特別限制，可依目的適 宜選擇，較佳為1MPa至H)0MPa、更佳為5Mpa至75Mpa、 最佳為lOMPa至50MPa。 、該壓製力小於iMPa時’會有無法獲得壓製之效果， 超過jOGMPa _ ’會祕基板。—方面該壓製力在該最 佳之範圍内時，以壓力與讀取性的均衡之觀點而言是有利 的。 該壓製步驟中的壓製時間，並無特別限制，可依目的 適宜選擇，不過較佳是〇.〇1秒至3秒、更佳在〇 〇5秒至2 秒、最佳在0.1秒至丨秒。 該壓製B夺間小於〇〇1秒時，會有無法獲得壓製之效 ;2時’會使生產性降低。-方面，該壓製時間 =佳之㈣’取得生產性與讀取而 言是有利的。 在壓製對準椤# τ ^ + _ «t. - ^ ^ 上方區域中的含粒子薄膜時，由於 吕玄壓製步驟而使叔名讲> Α议知 3 子被推擠（粒子不是與壓製方向相同方 向移動，而是與壓激古 製而變薄的人私^ 垂直方向移動）’㈣在因壓 择血厭薄膜部分中’亦存在有粒子，其粒子密 又::製則，粒子薄膜中的粒子密度大致相同。因而，吾 人一、藉由使含粒子薄膜變薄，則易於進行對準標記之識 201138577 別，而使後述圖型識別一致度提高。 «正上方區域》 该正上方區域係指從該對準標記所形成之基材的正交 方向目視時，只要是含有位於對準標記頂部之上位置的區 =(第3圖中區域A)之至少_部分的區域，則並無特別 目的適宜選擇，較佳是從該對準標⑽形成之 之上的區ί方^目視時，含有位於對準之重心部（中心部） 向目視日^^^該對準標記卿叙基材之正交方 區域幻子^ 之頂部之上的區域（第3财的 之義材之正β包含之區域。為了從該對準標記所形成 區==?目視時，使位於對準標記之頂部之上的 之厚度變薄，故^域^)予以全部包含區域之含粒子薄膜 記。 用可麼製的壓製構件，用以覆蓋對準標 «壓製構件》 該壓製構件方面，σ 特別限制，可依目的適宜選擇。3粒子薄膜，則並無 宜選ί壓狀方面’並無特別限制，可依目的適 评列舉例如圓柱狀、在 一 形狀等。該等中，就㈣卜底面形成有半球之 高後述圖型識別一致度之:點射•抑制「光澤」，並提 形成有半球之形狀。 ‘” °父佳為在圓柱一底面 該壓製構件之大彳、方面，並 且選擇，不過較佳為可壓製的大小，用:制:可依目的適 χ覆蓋對準標記。 201138577 該麼製構件之材質方面，並益 宜，，不過以含粒子薄臈中 ：厂可依目的適 。，較佳為塗布聚四氟珩成分） 又’賴製構件啊表面之物。 收各對準標記間之高度差;！二：脊機構，其可吸 構，其易於使含粒子薄膜之厚度變薄 部的）加熱機 <組裝區域自界步驟〉 該組裝區域劃界步驟’係根據該含 Ϊ的部分形成於正上方區域的對準標記之位^之厚度較 零件之組裝__界之步驟。 置’進行電子 «該對準標記之識別方法〉〉 、5亥對準標記之識別方法方面，並無特別限制， 的適宜選擇’如日本特開2__刪62號 可依目 所使用之方法，可例舉例如朝向對準標㈣^，先前 準標記中檢測反射光之方法等。 九，在該對 例如’如第6圖及第7圖所示，圓型對準 型對準標記係酉己置於忙、基板。在此，對準標^及十字 ^用以位置對準之中心座標c，並設定 = 外周），卩對應於該中心座標c。在讀取照^己（+之 標記（圓或十字）日寺，則自然地可導出中心=之對準 準。設定對準標記以與中心座標C 一致。'c，並辦 «電子設備》 該電子設備方面，並無特別限制，可依 可例舉例如1C晶片等。 J题且選擇， 11 201138577 <<組裝區域》 該組裝區域方面，只要係根據對準標記之位置，則並 無特別限制’可依目的適宜選擇，較佳是位於對準標記内 部的組褒區域（第5圖）。藉此，可使組裝基板小型化。 <電子零件組裝步驟> 該電子零件組裝步驟係在該組裝區域組裝電子零件之 步驟。例如含微粒子薄膜在含有熱硬化樹脂之情形，則經 由含粒子薄膜，藉由使基材與電子零件熱壓合，而組裝電 子零件於該組裝區域。 <<熱壓合》 該熱壓合中的壓力方面，並無特別限制，可依目的適 宜選擇，較佳為〇.lMPa至10MPa、更佳為〇 5MPa至7MPa、 特佳為IMPa至5MPa。 ， 該壓力小於O.IMPa時，會因壓製不足而至無法導 通，大於lOMPa時，會因彈回而有無法導通之情形。一方 面，該壓力在該特佳的範圍内時，以導 而語是有_。 _之H生之觀點[Technical Field] The present invention relates to a method of manufacturing an electronic component assembly structure and an electronic component assembly structure manufactured by the method. [Prior Art] It is a well-known method to directly assemble an anisotropic conductive film which adheres and disperses a guide wire on a wiring board such as a printed wiring board. In the assembly of the heterogeneous conductive substrate, the IC wafer is mounted on the wiring substrate to which the anisotropic conductive film is attached, and then the IC wafer is pressed and heated to cure the anisotropic conductive film and heat is performed. Press fit assembly. When the 1C wafer is connected to the wiring substrate, alignment between the two is required with high precision. In other words, it is very important to identify the alignment marks on the Ic wafer and the alignment marks on the wiring substrate, and to accurately and positively perform the alignment of the wafer and the wiring substrate to which the 1C wafer is pasted. Here, from the viewpoint of identifying the alignment mark, as shown in the figure, the anisotropic conductive film 10 is aligned with the size of each IC wafer 3, and is disposed on the wiring substrate to make the anisotropic conductive The film 1 〇 does not overlap with the alignment mark 2 , , or as shown in FIG. 2 , the width of the anisotropic conductive 貘 1 〇 and the redundant wafer 3 - is made and attached. Therefore, it is necessary to make the anisotropic conductive film conform to each shape and to adhere it, thereby reducing the production cost, and it is necessary to be a high-precision film sticking device. In the direct assembly of the wiring board 1 (in the flip chip assembly of the wafer, 201138577 is formed by forming an adhesive layer on the portion other than the alignment mark of the wiring substrate (for example, Patent Document 1), but forming an adhesive layer. The present invention solves the problem of the prior art. [Problems to be solved] The object of the present invention is to provide a method for manufacturing an electronic component assembly structure and an electronic component assembly structure manufactured by the method, which are provided by a particle-containing film. The means for solving the problem is as follows: <1> A method of manufacturing an electronic component assembly structure, comprising: a film arrangement step, wherein Aligning the marked substrate, arranging a film containing particles; pressing step, pressing the pressing member directly above the alignment mark a particle-containing film in the domain to thin the thickness of the particle-containing film; and an assembly region demarcation step of forming an electron according to a portion where the thin portion of the particle-containing film is formed at an alignment mark of a region immediately above And the electronic component assembly step of assembling the electronic component in the assembly area. The manufacturing method of the electronic component assembly structure according to the item <1>, wherein the pressing member is used in 201138577 A method of manufacturing an electronic component assembly structure according to the item <1> or <2>, wherein the pressing member is compressible and is used to cover the alignment mark. The manufacturing method of the electronic component assembly structure according to any one of <1> to <3>, wherein the pressing member contains polytetrafluoroethylene. <5> The method of manufacturing an electronic component assembly structure according to any one of the invention, wherein the particle-containing film contains a thermosetting resin, and in the electronic component assembly step, the substrate and the electronic component are hot-pressed via the particle-containing film. Combined The manufacturing method of the electronic component assembly structure according to any one of <1> to <5>, wherein the alignment mark is located in the assembly area. <7> as the <1> The method of manufacturing an electronic component assembly structure according to any one of the items of the present invention, wherein, in the electronic component assembly step, an elastic head containing an elastic body is used. <8> An electronic component assembly structure. The present invention is manufactured by the method of manufacturing an electronic component assembly structure according to any one of the items <1> to <7>. [Effect of the Invention] According to the present invention, the prior problems can be solved and can be achieved. The above object is to provide a method of manufacturing an electronic component assembly structure and an electronic component assembly structure produced by the method, which can identify an alignment mark via a particle-containing film. [Embodiment] 201138577 (Electronic component assembly structure and method of manufacturing the same) The method of manufacturing an electronic component assembly structure of the present invention includes at least a film arrangement step, a pressing step, an assembly area delimiting step, and an electronic component assembly step, and further Contains additional steps that are appropriate for your needs. The electronic component assembly structure of the present invention is an electronic component assembly structure manufactured by the method of manufacturing an electronic component assembly structure of the present invention, comprising: a substrate having an alignment mark; and a particle-containing layer formed on the substrate The film and the electronic component assembled to the assembly area according to the position of the alignment mark. <Film Arrangement Step> The film disposing step is a step of disposing a particle-containing film on a substrate having an alignment mark. «Alignment mark" The alignment mark is not particularly limited as long as it can be used to align the position of the substrate with the electronic component, and can be appropriately selected depending on the purpose. The shape of the alignment mark is not particularly limited, and may be appropriately selected depending on the purpose, and examples thereof include a columnar shape, a hemispherical shape, a conical shape, a prismatic shape, a pyramid shape, and a cross shape. Among these, from the viewpoint of easiness of formation by etching or plating, a cylindrical shape is suitable. The size of the alignment mark is not particularly limited and may be appropriately selected depending on the purpose, but the maximum length of the cross-sectional shape (for example, in the case of a cylindrical shape, the circular diameter of the cylindrical section) is preferably 〇. 5 mm to 1 mm. More preferably, it is 0.1 mm to 0.6 mm, and most preferably 0.2 mm to 0.5 mm. When the maximum length is less than 〇.〇5mm, there will be a 201138577 shape that cannot be read. When it is larger than lmm, there will be a situation in which the target is aligned. The maximum length is included in the field of view. It is advantageous from a sexual point of view. - When inside, the mark is added. In addition, the maximum length refers to the alignment mark (the meaning of the diameter or the diagonal line. The area of the area). The height of the alignment mark and the material of the alignment mark on the substrate, Dragon " ; to the equivalent. It is preferable to select 'for example, as a +, + material, and: a limitation, a copper field can be applied as a core (4) according to the purpose, and a nickel/gold material, "substrate" can be plated on the 5th. In terms of materials, there is no method, and examples thereof include a glass epoxy substrate, a polyimide substrate, a PET substrate, and the like. In the case of the particle-containing film, the particle-containing film is particularly limited, and may be appropriately selected according to the purpose, and may include, for example, a non-electrode film (ACF) or a stone particle. Conductive film (NCF), etc. / - Anisotropic conductive film (ACF) - Substituting the difference: 1 In terms of the conductive film (ACF), as long as it contains at least a conductive particle and a film of the adhesive, it is helmeted. , J 。 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , 201138577 The average particle size of a metal plate or metal is = metal particles, there is no particular limitation, depending on the table _ to drill, copper, etc. In order to prevent the surface oxidation, there are also all dr Furthermore, it is also possible to use a metal sheet on a surface sheet or a material coated with an organic material. The metal coating _ particle aspect is not ❹ 择 择 择 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可Pull the same. It can also be applied on the outermost surface. Gold, in addition, can also be used on the surface of the metal, + sub-membrane. Organic coated insulating skin - adhesive - can be ==:: and C: limit, can be selected according to the purpose, - non-conductive: A thermosetting resin such as an acid resin or the like. The non-conductive film (NCF) is not particularly limited as long as it is suitable for the purpose, and may be a thermosetting epoxy resin film such as a cerium particle or the like. For example, in the case of the inclusion-fragmented particles, there is no (four)_but=quantity, and the == area alignment is the step of thinning the thickness of the upper three-layered tantalum film. 201138577 In addition, in the manufacturing step In the middle, a plurality of pressing members can also be used to collectively suppress the particle-containing film in the area directly above the plurality of alignment marks. «Repression" The waste force in the (4) is not particularly limited, and may be Suitably, it is preferably 1 MPa to H) 0 MPa, more preferably 5 MPa to 75 MPa, most preferably 10 MPa to 50 MPa. When the pressing force is less than iMPa, the effect of pressing may not be obtained, exceeding the jOGMPa _ 'secretary substrate. - the pressure is within the optimum range It is advantageous from the viewpoint of the balance of pressure and readability. The pressing time in the pressing step is not particularly limited and may be appropriately selected depending on the purpose, but is preferably 〇1 至 to 3 seconds, more Preferably, it is 5 seconds to 2 seconds, preferably 0.1 second to leap seconds. When the compression B is less than 〇〇1 second, there is no effect of pressing; at 2 o', the productivity is lowered. , the pressing time = better (four) 'is advantageous in terms of productivity and reading. In the pressing alignment 椤# τ ^ + _ «t. - ^ ^ in the upper region of the particle-containing film, due to the Lu Xuan pressing step And let the uncle's name> Α 知 know that 3 children are pushed (the particles are not moving in the same direction as the pressing direction, but moving in the vertical direction with the pressure of the ancient and thinner people's pressure) '(4) in the blood pressure selection In the anodic film portion, there are also particles, and the particles are dense:: The particle density in the particle film is substantially the same. Therefore, by thinning the particle-containing film, it is easy to carry out the alignment mark 201138577, and the pattern recognition degree described later is improved. «Upper area" The area immediately above refers to the area from the orthogonal direction of the substrate formed by the alignment mark, as long as it contains the area located above the top of the alignment mark = (area A in Fig. 3) The at least part of the area is not particularly suitable for selection, and is preferably from the area above the alignment mark (10), including the center of gravity (center) of the alignment. ^^^ The alignment mark marks the area above the top of the orthogonal square area of the base material of the substrate (the area of the positive material of the material of the third wealth). In order to form the area from the alignment mark = =? When visually, the thickness of the top of the alignment mark is made thinner, so that the particle-containing film of all the areas is included. The pressing member can be used to cover the alignment mark «pressing member". In terms of the pressing member, σ is particularly limited and can be appropriately selected according to the purpose. The 3 particle film is not particularly limited in its selection, and may be, for example, a cylindrical shape or a shape, depending on the purpose. In the above, the pattern of the hemispheres is formed on the bottom surface of the fourth layer, and the pattern matching degree is determined: the spotting is suppressed, the "gloss" is suppressed, and the shape of the hemisphere is formed. ''The father is the large, ,, and the choice of the pressing member on the bottom surface of the cylinder, but it is preferably a compressible size. The system can be used to cover the alignment mark according to the purpose. 201138577 In terms of material, it is beneficial, but in the case of containing particles, the factory can be adapted according to the purpose. It is preferably coated with polytetrafluoroethylene (component) and the surface of the component. Height difference; two: ridge mechanism, which can be sucked, which is easy to make the thickness of the particle-containing film thinner) heating device < assembly area self-bounding step> the assembly area demarcation step 'based on the Ϊ The part is formed in the upper right area, and the thickness of the alignment mark is smaller than the assembly of the part. The setting of 'electron «the identification mark of the alignment mark>>, the identification method of the 5H alignment mark There is no particular limitation, and a suitable selection can be exemplified by, for example, Japanese Patent Application Laid-Open No. Hei. No. 62, which can be exemplified by the method of detecting the reflected light in the prior standard mark, for example, toward the alignment mark (4). In the pair such as 'as shown in Figure 6 and As shown in Fig. 7, the circular alignment type alignment mark system has been placed on the busy substrate. Here, the alignment mark and the cross ^ are used to position the center coordinate c, and set = outer circumference), Corresponding to the central coordinate c. In the reading of the photo (+ mark (circle or cross) day temple, the alignment of the center = can naturally be derived. The alignment mark is set to coincide with the central coordinate C. 'c And the electronic device is not particularly limited, and can be exemplified by, for example, a 1C wafer, etc. J and select, 11 201138577 <<Assembly area> The position of the quasi-marker is not particularly limited', and may be appropriately selected depending on the purpose, and is preferably a group region located inside the alignment mark (Fig. 5). Thereby, the assembled substrate can be miniaturized. Step> The electronic component assembly step is a step of assembling an electronic component in the assembly area. For example, in the case where the microparticle-containing film contains a thermosetting resin, the substrate and the electronic component are thermally pressed by the particle-containing film. Assembling electronic parts [assembly area] <<Heat press bonding" The pressure in the thermocompression bonding is not particularly limited and may be appropriately selected according to the purpose, preferably 〇.1 MPa to 10 MPa, more preferably 〇5 MPa to 7 MPa, particularly excellent. It is IMPa to 5 MPa. When the pressure is less than 0.1 MPa, it will not be able to conduct due to insufficient compression. If it is greater than 10 MPa, it will be unable to conduct due to bounce. On the one hand, the pressure is within this excellent range. When you speak, there is _. _H's view of life
該熱壓合中，加熱溫度方面，並—ϋ目 =適宜選擇，較佳為9(TC至賊、更佳為、 最佳為1HTC至20(TC。 L 該加熱溫度小於90°c時，硬化需要眛 時，會使殘留應力變大。一方面，該:熱：大:： _内時’以連接可靠度之觀點而言是有利：-最佳之 該熱壓合中的熱壓合時間方面，並無特別限制，可依 12 201138577 目的適宜選擇，較佳為3秒至300秒、更佳為4秒至60秒、 最佳為5秒至30秒。 該熱壓合時間小於3秒時，會有樹脂無法充分硬化之 情形，大於300秒時，會有生產性降低之情形。一方面， 該熱壓合時間在該最佳之範圍内時，以生產性與連接可靠 度之觀點而言是有利的。 又，該熱壓合中，較佳是使用彈性頭。 -彈性頭- 該彈性頭方面，只要是含有彈性體，則並無特別限制， 可依目的適宜選擇。 該彈性體方面，並無特別限制，可依目的適宜選擇， 可例舉天然橡膠、聚矽氧橡膠等之合成橡膠等。該等材料 中，由耐熱性及耐壓性之觀點而言，較佳為聚矽氧橡膠。 <其他步驟> 該其他之步驟方面，並無特別限制，可依目的適宜選 擇。 【實施例】 茲就本發明之實施例說明如下，不過本發明並無受下 述實施例所做任何限定。 (實施例1) 如第3圖及第4圖所示，在TEG基板34 (商品名： MCL-E-679F，日立化成工業公司製）（上，以縱8mm、橫 8mm之點距所形成的對準標記31 (芯：銅，鎳/金鍍敷）、 剖面直徑0.3mm之圓形的圓柱形狀上，黏貼異方性導電膜 13 201138577 32 (商品名：FP5530 ’新力化學資訊設備股份有限公司製， 厚度：40μιη) ’使用圓柱形狀（底面：直徑2mm，高度： 20mm，前端形狀呈平坦）之金屬棒4〇，於壓製力2〇MPa、 壓製時間1秒壓製，形成凹部（厚度較薄的部分）33 ’使 用倒裝片接合機（商品名：FB30T-M，Panasonic公司製）， 根據凹部33形成於正上方區域之對準標記的位置，在經劃 界的組裝區域上，組裝1C晶片41，並製作電子零件組裝構 造體。使用表面粗度測定機（商品名：SE3500，小坂研究 所公司製），測定對準標記31上之異方性導電膜32的厚度 Μμηι)(透過測定位置使厚度變化之情形為最小值），使用 倒裝片接合機（商品名：FB30T-M，Panasonic公司製），測 定對準標記31之圖型識別一致度數A，並使用分光測色計 (商品名：CM-3600d，Konica Minolta公司製）來測定光 透過率（％)。 又’如第5圖所示，即使相對於1C晶片41之組裝區 域内以縱5.5mm、橫5.5mm之點距所形成的對準標記51 (芯：鋼，鎳/金鑛敷），剖面為直徑0.1 mm之圓形狀的圓 柱形狀’亦與對準標記31之情形相同，黏貼異方性導電膜 32 ’並使用金屬棒40壓製，形成凹部33，而製作電子零件 組裝構造體，並測定圖型識別一致度數B。 此外，該圖型識別一致度數A及B，係使用倒裝片接 D機（商品名：FB30T-M，Panasonic公司製），使用正規化 相關而計算的絕對評價（絕對值 又’該光透過率係使用對準標記31、51上異方性導電 201138577 膜32之厚度的測定結果’計算該已測定厚度之異方性導電 膜的光透過率。因而’在黏貼異方性導電膜32之前的光透 過率成為100%。 (實施例2)In the thermocompression, in terms of heating temperature, it is suitably selected, preferably 9 (TC to thief, more preferably, preferably 1 HTC to 20 (TC. L) when the heating temperature is less than 90 ° C, When the hardening requires enthalpy, the residual stress becomes large. On the one hand, the heat: large:: _inner is advantageous in terms of connection reliability: - the best thermal compression in the thermal compression The time is not particularly limited and may be appropriately selected according to the purpose of 12 201138577, preferably 3 seconds to 300 seconds, more preferably 4 seconds to 60 seconds, and most preferably 5 seconds to 30 seconds. The hot pressing time is less than 3 In the second case, there is a case where the resin cannot be sufficiently hardened, and when it is more than 300 seconds, there is a case where productivity is lowered. On the one hand, when the hot pressing time is within the optimum range, productivity and connection reliability are used. Further, in the thermocompression bonding, it is preferable to use an elastic head. - Elastic Head - The elastic head is not particularly limited as long as it contains an elastomer, and can be appropriately selected depending on the purpose. The elastomer is not particularly limited and may be appropriately selected according to the purpose, and may be exemplified by natural rubber and poly A synthetic rubber such as an oxy-rubber or the like. Among these materials, from the viewpoint of heat resistance and pressure resistance, a polyoxyxene rubber is preferred. <Other Steps> The other steps are not particularly limited. [Embodiment] The following describes the embodiments of the present invention, but the present invention is not limited by the following examples. (Example 1) As shown in Figs. 3 and 4 In the TEG substrate 34 (trade name: MCL-E-679F, manufactured by Hitachi Chemical Co., Ltd.) (the upper mark is formed by the dot pitch of 8 mm in length and 8 mm in width) (core: copper, nickel/gold plating) ), a circular cylindrical shape having a cross-sectional diameter of 0.3 mm, and an anisotropic conductive film 13 201138577 32 (trade name: FP5530 'Silicon Chemical Information Equipment Co., Ltd., thickness: 40 μιη) 'Using a cylindrical shape (bottom: diameter 2mm, height: 20mm, the shape of the front end is flat), the metal bar 4〇, pressed at a pressing force of 2〇MPa, and pressed for 1 second, forming a concave portion (thinner portion) 33' using a flip chip bonding machine (trade name) : FB30T-M, manufactured by Panasonic Corporation) The 1C wafer 41 is assembled on the demarcated assembly area by the position of the alignment mark formed in the upper portion of the recess 33, and the electronic component assembly structure is produced. The surface roughness measuring machine (trade name: SE3500, The thickness of the anisotropic conductive film 32 on the alignment mark 31 is Μμηι) (the thickness is changed to the minimum value by the measurement position), and a flip chip bonding machine (trade name: FB30T-) is used. M, Panasonic Corporation, measured the pattern recognition degree A of the alignment mark 31, and measured the light transmittance (%) using a spectrophotometer (trade name: CM-3600d, manufactured by Konica Minolta Co., Ltd.). Further, as shown in Fig. 5, even with respect to the alignment mark 51 (core: steel, nickel/gold ore) formed by the dot pitch of 5.5 mm in length and 5.5 mm in width in the assembly region of the 1C wafer 41, the profile The cylindrical shape of a circular shape having a diameter of 0.1 mm is also the same as in the case of the alignment mark 31, and the anisotropic conductive film 32' is adhered and pressed by the metal bar 40 to form the concave portion 33, and an electronic component assembly structure is produced and measured. The pattern recognition degree is B. In addition, the pattern recognition degree A and B are absolute evaluations calculated using normalization correlation using a flip chip D (product name: FB30T-M, manufactured by Panasonic) (absolute value and 'the light transmission The rate is determined by using the measurement result of the thickness of the anisotropic conductive 201138577 film 32 on the alignment marks 31 and 51'. The light transmittance of the anisotropic conductive film of the measured thickness is calculated. Thus, 'before attaching the anisotropic conductive film 32 The light transmittance is 100%. (Example 2)
除了在實施例1中，將圓柱形狀（底 面：直徑2mm， 咼度.20mm，前端形狀平坦）之金屬棒變更為組合圓柱形 狀（底面.直径2mm ’高度：20mm)與半球（直徑2mm) 开> 狀（刖端形狀為半球狀）的金屬棒以外，其他則與實施 例1相同，來製作電子零件組裝構造體，並測定異方性導 電膜之厚度Μμιη)、圖型識別一致度數A及B(%)、光透過 率（％) 〇 (比較例1 ) 除了在實施例1中，並不進行金屬棒所致的壓製以外， 其他則與實施例1相同，來製作電子零件組裝構造體，測 定異方性導電膜之厚度ί0(μιη)、圖型識別一致度數A及 B(%)、光透過率(％)。 【表1】In addition to the first embodiment, the metal rod of the cylindrical shape (bottom surface: diameter 2 mm, twist. 20 mm, flat front end shape) was changed to a combined cylindrical shape (bottom surface, diameter 2 mm 'height: 20 mm) and hemisphere (diameter 2 mm). In the same manner as in the first embodiment, the electronic component assembly structure was produced in the same manner as in the first embodiment, and the thickness of the anisotropic conductive film Μμιη) and the pattern recognition degree A were measured. And B (%), light transmittance (%) 〇 (Comparative Example 1) The electronic component assembly structure was produced in the same manner as in Example 1 except that the pressing by the metal bar was not performed in the first embodiment. The thickness of the anisotropic conductive film ί0 (μιη), the pattern recognition degree A and B (%), and the light transmittance (%). 【Table 1】
由以上可知，由於實施例i及2之圖型識別一致度在 容許範圍内（70%以上），故藉由以金屬棒4〇壓製對準標 §己31、51上之異方性導電膜32，並藉由倒裝片接合機（商 15 201138577 口口名FB3〇T-]yt，panasonic公司製），而可識別對準標記 31 ' 51 ° 如實施例1及2般，若壓製在對準標記之正上方區域 中的含粒子薄由於因該壓製而使粒子被擠壓（粒子 並不朝向與壓製方向同一方向移動’而是朝向與壓製方向 大致垂直方向移動）’即使在因壓製而變薄的含粒子薄膜部 分’亦=在有粒子’餘子密度與在壓製前含粒子薄膜中 之粒子度大致相同。因而’吾人認為藉由使含粒子薄膜 14而可易於進行對準標記之識別’並提高圖型識別一 致度A、B。 又’由於可以覆蓋對準標記3卜51之形態，黏貼異方 !·生導電膜32於基板34全面，故不需高精度的薄膜黏貼裝 置，又’可使接著薄片黏貼次數減少，以此可謀求步驟之 縮短。 又’如第5圖所示，可在Ic晶片41之組裝區域内， 設置對準標記51，並可使基板小型化。 又’在比較實施例1與實施例2，該實施例丨係使用前 端形狀呈平坦之金屬棒，來㈣異方性導電膜，該實施例2 係使用前端形狀呈半球狀之金屬棒，來壓製異方性導電膜 之情形，即使對準標記上異方性導電膜之厚度^各自為 ΐΟμιη ’亦以實施例2者顯示良好的圖型識別—致度(％)。 吾人認為此係藉由使用前端形狀為半球狀之金屬棒，而使 所形成之凹部的形狀呈半球狀，可使人射紐射，且抑制 「光澤」，並提高圖型識別一致度（％)。 201138577 【產業上可利用性】 本發明之電子零件組裝構造體之製造方法，可適當使 用於例如半導體裝置等之製造。 【圖式簡單說明】 第1圖表示先前配線基板中異方性導電膜之配置圖（此 其1)。From the above, since the pattern recognition degree of the examples i and 2 is within the allowable range (70% or more), the anisotropic conductive film on the target 31, 51 is pressed by the metal bar 4〇. 32, and by flip chip bonding machine (Business 15 201138577 mouth name FB3 〇 T-] yt, manufactured by panasonic company), the alignment mark 31 ' 51 ° can be recognized, as in the case of Examples 1 and 2, if pressed The particle-containing particles in the region directly above the alignment mark are thinned by the pressing (the particles do not move in the same direction as the pressing direction) but move in a direction substantially perpendicular to the pressing direction) even if pressed The thinned particle-containing film portion also has approximately the same particle density as the particles in the particle-containing film before pressing. Therefore, 'we believe that the identification of the alignment marks can be easily made by making the particle-containing film 14' and the pattern recognition degrees A and B are improved. In addition, since the alignment mark 3b 51 can be covered, the adhesive film is adhered to the opposite side! The raw conductive film 32 is completely integrated on the substrate 34, so that a high-precision film sticking device is not required, and the number of times of adhering the sheet can be reduced. The steps can be shortened. Further, as shown in Fig. 5, the alignment mark 51 can be provided in the assembly area of the Ic wafer 41, and the substrate can be miniaturized. Further, in Comparative Example 1 and Example 2, this embodiment uses a metal rod having a flat front end shape to provide a (iv) anisotropic conductive film. In the second embodiment, a metal rod having a hemispherical shape at the front end is used. In the case where the anisotropic conductive film was pressed, even if the thickness of the anisotropic conductive film on the alignment mark was ΐΟμηη', the pattern recognition degree (%) was exhibited as in Example 2. I believe that by using a metal rod whose tip shape is hemispherical, the shape of the concave portion formed is hemispherical, which can make a person shoot a new shot, suppress the "gloss", and improve the pattern recognition degree (%). ). [Industrial Applicability] The method of manufacturing the electronic component assembly structure of the present invention can be suitably applied to, for example, the manufacture of a semiconductor device or the like. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing the arrangement of an anisotropic conductive film in a conventional wiring substrate (the first one).
第2圖表示先前配線基板中異方性導電膜之配置圖（此 其2)。 第3圖係用以說明本發明中電子零件組裝構造體之製 造方法的圖（此其i)。 第4圖係用以說明本發明中電子零件組裝構造體之製 造方法的圖（此其2)。 第5圖係用以說明本發明中電子零件組裝構造體之 造方法的圖（此其3)。 、第6圖係表示本發明中電子零件組裝構造體之製造方 法所使用對準標記的例圖。 第7圖係表示本發明中電子零件組裝構造體之製造方 法所使用對準標記的其他例圖。 【主要元件符號說明】 異方性導電膜 20 對準標記 30 1C晶片 201138577 31 對準標記 32 異方性導電膜 33 凹部 34 基板 40 金屬棒 41 1C晶片 51 對準標記Fig. 2 is a view showing the arrangement of the anisotropic conductive film in the prior wiring substrate (2). Fig. 3 is a view for explaining the manufacturing method of the electronic component assembly structure of the present invention (this i). Fig. 4 is a view for explaining the method of manufacturing the electronic component assembly structure of the present invention (this 2). Fig. 5 is a view for explaining the method of fabricating the electronic component assembly structure of the present invention (the third embodiment). Fig. 6 is a view showing an example of alignment marks used in the method of manufacturing the electronic component assembly structure of the present invention. Fig. 7 is a view showing another example of alignment marks used in the method of manufacturing the electronic component assembly structure of the present invention. [Main component symbol description] Anisotropic conductive film 20 Alignment mark 30 1C wafer 201138577 31 Alignment mark 32 Anisotropic conductive film 33 Recessed portion 34 Substrate 40 Metal rod 41 1C wafer 51 Alignment mark