201137368 六、發明說明： 【發明所屬之技術領域】 本發明是有關除電裝置的監視裝置、除電裝置的監視 方法及除電裝置的監視用程式，更詳細是使用於被檢査體 的電氣特性檢查的檢査裝置之除電裝置的監視裝置、除電 裝置的監視方法及除電裝置的監視用程式。 【先前技術】 檢査裝置是用以進行在前工程所製造的被檢查體（例 如半導體晶圓）的電氣特性檢查。檢查裝置是具備：以卡 匣單位來收納半導體晶圓的裝載機室、及進行自該裝載機 室接受的半導體晶圓的電氣特性檢查的探針器室。 裝載機室是具備：一片一片搬送半導體晶圓的晶圓搬 送機構、及經由晶圓搬送機構在搬送半導體晶圓的期間使 半導體晶圓的方向一致的預對準機構（以下稱爲「副吸盤 」）。又，探針器室具備：載置半導體晶圓而於χ、γ、 Ζ及Θ方向移動的載置台（以下稱爲「主吸盤」）、及配 置於主吸盤的上方之探針卡、及進行探針卡的探針與主吸 盤上的半導體晶圓的電極焊墊的對準之對準機構。並且， 在形成探針器室的上面的頂板（head plate )配置有與探 針卡電性接觸的測試頭，經由測試頭在測試器與探針卡之 間收發所定的訊號。 在探針器室內進行半導體晶圓的電氣特性檢查時，主 吸盤與對準機構會互動進行主吸盤上的半導體晶圓的電極 -5- 201137368 焊墊與探針卡的探針之對準後，主吸盤會移動而使半導體 晶圓與探針卡電性接觸，針對半導體晶圓的複數的裝置來 進行電氣特性檢查。檢查後，主吸盤會下降而使半導體晶 圓離開探針卡後，主吸盤會進行半導體晶圓的索引傳遞， 依序進行有關全部的裝置的電氣特性檢查。 可是，在進行檢査時因爲主吸盤的移動時與空氣的摩 擦等而使得在主吸盤或半導體晶圓帶靜電。此現象難避免 ，若就那樣放置不理，則在靜電的影響下恐有在檢查中損 傷裝置的配線構造之虞。特別是因爲裝置的微細構造化， 如此的現象變得顯著。於是，本案申請人在專利文獻1中 提案經由主吸盤來除去半導體晶圓所帶的靜電之除電裝置 。此除電裝置在探針器室內進行半導體晶圓的電氣特性檢 査時，是在經由主吸盤使半導體晶圓離開探針卡，索引傳 遞半導體晶圓時除去主吸盤上的半導體晶圓所帶的靜電， 在半導體晶圓與探針卡電性接觸而進行半導體晶圓的電氣 特性檢査時不除電。 亦即’主吸盤是經由接地用配線來接地，在此接地用 配線設有構成除電裝置的繼電器開關。繼電器開關是在控 制器的控制下開閉接地用配線的電路，當半導體晶圓與探 針卡電性接觸時是繼電器開關會打開接地用配線的電路而 不除電’除此外時是繼電器開關會閉合接地用配線的電路 而經由主吸盤來除去半導體晶圓所帶的靜電。 [專利文獻1]特開2007-180580號公報 201137368 【發明內容】 (發明所欲解決的課題） 然而’專利文獻丨的除電裝置的情況，因爲利用繼電 器開關來除電’所以一旦繼電器開關重複開閉動作，則會 有繼電器開關的可動接點與固定接點熔著的情形。一旦繼 電器開關熔著，則繼電器開關應打開接地用配線的電路時 不會進行原本的動作，原封不動閉合，所以在半導體晶圓 與探針卡電性接觸而進行裝置的電氣特性檢查時亦持續來 自主吸盤的放電，因此在半導體晶圓與探針卡電性接觸而 正進行檢查中’恐有半導體晶圓的電磁氣的環境大變動而 對半導體晶圓的電氣特性檢查造成不良影響，有損檢查的 可靠度之虞。 本發明是爲了解決上述課題而硏發者，其目的是在於 提供一種進行被檢查體的電氣特性檢查時，監視用以除去 被處理體所帶的靜電的除電裝置，而可進行可靠度高的電 氣特性檢查之除電裝置的監視裝置、除電裝置的監視方法 及除電裝置的監視用程式。 (用以解決課題的手段） 本發明的請求項1所記載的除電裝置的監視裝置，係 於載置被檢查體的載置台與探針卡相對地移動，且上述載 置台上的上述被檢查體與上述探針卡電性接觸而進行上述 被檢查體的電氣特性檢查的期間，監視利用放電開關電路 來閉合用以將上述載置台接地的接地用配線的電路而從上 201137368 述載置台來除去上述被檢查體所帶的靜電的除電裝置之裝 置，其特徵係具備： 檢測開關電路，其係與上述放電開關電路連動，且檢 測出上述放電開關電路的錯誤動作； 檢測驅動電路，其係開閉該檢測開關電路；及 判定電路，其係經由上述檢測開關電路來判定上述放 電開關電路的錯誤動作。 又’本發明的請求項2所記載的除電裝置的監視裝置 ，係於請求項1所記載的發明中，上述除電裝置係具有： 上述放電開關電路、及開閉上述放電開關電路的放電驅動 電路’上述放電開關電路係當上述被檢查體與上述探針卡 未電性接觸時閉合上述接地用配線的電路，而從上述載置 台來除去上述被檢査體所帶的靜電，當上述被檢查體與上 述探針卡電性接觸時打開上述接地用配線的電路，而中斷 來自上述載置台的放電。 又’本發明的請求項3所記載的除電裝置的監視裝置 ’係於請求項1或請求項2所記載的發明中，上述接地用 配線係被連接至上述載置台的載置面。 又’本發明的請求項4所記載的除電裝置的監視裝置 ’係於請求項1或請求項2所記載的發明中，上述檢測開 關電路及檢測驅動電路係構成爲繼電器開關。 又’本發明的請求項5所記載的除電裝置的監視方法 ’係於被檢查體的載置台與探針卡相對地移動，且上述載 置台上的上述被檢查體與上述探針卡電性接觸而進行上述 201137368 被檢查體的電氣特性檢查的期間 來閉合用以將上述載置台接地的 述載置台來除去上述被檢查體所 法，其特徵係具備： 監視上述放電開關電路的第 係於上述被檢查體與上述探針卡 載置台除去上述靜電而閉合上述 監視上述放電開關電路的第 係於上述被檢查體與上述探針卡 上述載置台的靜電除去而打開上 在上述第1步驟，上述放電 述放電開關電路爲錯誤動作的第 又，本發明的請求項6所記 式，係電腦驅動實行監視除電裝 裝置係於被檢查體的載置台與探 載置台上的上述被檢查體與上述 述被檢查體的電氣特性檢查的期 閉合用以將上述載置台接地的接 載置台來除去上述被檢查體所帶 其特徵係使實行： 監視上述放電開關電路的第 係於上述被檢査體與上述探針卡 載置台除去上述靜電而閉合上述 監視上述放電開關電路的第 ，監視利用放電開關電路 接地用配線的電路而從上 帶的靜電的除電裝置之方 1步驟，該放電開關電路 未電性接觸時爲了從上述 接地用配線的電路； 2步驟，該放電開關電路 電性接觸時爲了停止來自 述接地用配線的電路；及 開關電路打開時，判定上 3步驟。 載的除電裝置的監視用程 置的方法之程式，該除電 針卡相對地移動，且上述 探針卡電性接觸而進行上 間，利用放電開關電路來 地用配線的電路而從上述 的靜電， 1步驟，該放電開關電路 未電性接觸時爲了從上述 接地用配線的電路； 2步驟，該放電開關電路[Technical Field] The present invention relates to a monitoring device for a static elimination device, a monitoring method for a static elimination device, and a monitoring program for a static elimination device, and more specifically for inspection of electrical characteristics of an object to be inspected. A monitoring device for the static elimination device of the device, a monitoring method for the static elimination device, and a monitoring program for the static elimination device. [Prior Art] The inspection device is used to perform electrical property inspection of an object to be inspected (e.g., a semiconductor wafer) manufactured by a prior art. The inspection apparatus includes a loader chamber for storing a semiconductor wafer in a cassette unit, and a probe chamber for performing electrical characteristic inspection of the semiconductor wafer received from the load chamber. The loader chamber is provided with a wafer transfer mechanism that transports a semiconductor wafer one by one, and a pre-alignment mechanism that matches the direction of the semiconductor wafer while the semiconductor wafer is being transported by the wafer transfer mechanism (hereinafter referred to as "sub-sucker" "). Further, the prober chamber includes a mounting table (hereinafter referred to as a "main chuck") that moves the semiconductor wafer in the direction of χ, γ, Ζ, and Θ, and a probe card disposed above the main chuck, and An alignment mechanism for aligning the probe of the probe card with the electrode pads of the semiconductor wafer on the main chuck. Further, a test head electrically contacting the probe card is disposed on the upper head plate forming the prober chamber, and the predetermined signal is transmitted and received between the tester and the probe card via the test head. When the electrical characteristics of the semiconductor wafer are inspected in the probe chamber, the main chuck and the alignment mechanism interact to perform the alignment of the electrode of the semiconductor wafer on the main chuck - 201137368 solder pad and the probe of the probe card The main chuck moves to electrically contact the semiconductor wafer with the probe card, and the electrical characteristics are checked for a plurality of devices of the semiconductor wafer. After the inspection, the main chuck will drop and the semiconductor wafer will leave the probe card, and the main chuck will transfer the index of the semiconductor wafer, and the electrical characteristics of all the devices will be checked in sequence. However, when the inspection is performed, the main chuck or the semiconductor wafer is electrostatically charged due to friction with the air during the movement of the main chuck. This phenomenon is difficult to avoid. If it is left unattended, there is a fear that the wiring structure of the damage device will be damaged under the influence of static electricity. Especially because of the fine structure of the device, such a phenomenon becomes remarkable. Then, the applicant of the present invention proposed in Patent Document 1 to remove the static electricity removing device carried by the semiconductor wafer via the main chuck. When the static eliminating device performs the electrical characteristic inspection of the semiconductor wafer in the probe chamber, the semiconductor wafer is removed from the probe card via the main chuck, and the semiconductor wafer on the main chuck is removed when the semiconductor wafer is indexed and transferred. When the semiconductor wafer is electrically contacted with the probe card to perform electrical characteristic inspection of the semiconductor wafer, no power is removed. That is, the main suction cup is grounded via the grounding wiring, and the grounding wiring is provided with a relay switch constituting the static eliminating device. The relay switch is a circuit that opens and closes the grounding wiring under the control of the controller. When the semiconductor wafer is in electrical contact with the probe card, the relay switch opens the circuit for the grounding wiring without removing the electricity. In addition, the relay switch is closed. The grounding wiring circuit removes static electricity from the semiconductor wafer via the main chuck. [Problem to be Solved by the Invention] However, in the case of the static elimination device of the patent document, since the relay switch is used to remove electricity, the relay switch is repeatedly opened and closed. , there will be a case where the movable contact and the fixed contact of the relay switch are fused. Once the relay switch is fused, the relay switch should open the circuit for the grounding wiring without performing the original operation, and the original switch will not be closed. Therefore, the semiconductor wafer and the probe card are electrically contacted to perform the electrical characteristic inspection of the device. Since the discharge from the main chuck is in progress, the semiconductor wafer and the probe card are in electrical contact, and the environment of the electromagnetic gas of the semiconductor wafer is greatly changed, which adversely affects the electrical characteristics of the semiconductor wafer. The reliability of the damage check. The present invention has been made in order to solve the above problems, and an object of the present invention is to provide a static elimination device for detecting static electricity carried by a target object when performing electrical property inspection of an object to be inspected, thereby providing high reliability. The monitoring device of the static elimination device for electrical characteristic inspection, the monitoring method for the static elimination device, and the monitoring program for the static elimination device. (Means for Solving the Problem) The monitoring device for the static eliminator according to the first aspect of the present invention is configured such that the mounting table on which the object to be inspected is placed moves relative to the probe card, and the above-described inspection is performed on the mounting table While the electrical contact between the body and the probe is in contact with the probe, the circuit for monitoring the electrical characteristics of the object to be inspected is monitored, and the circuit for closing the grounding wire for grounding the mounting table by the discharge switch circuit is monitored and placed on the table from 201137368. An apparatus for removing a static electricity removing device carried by the object to be inspected, characterized by comprising: a detection switch circuit that detects an error operation of the discharge switch circuit in conjunction with the discharge switch circuit; and detects a drive circuit The detection switch circuit is opened and closed; and the determination circuit determines the malfunction of the discharge switch circuit via the detection switch circuit. In the invention according to claim 1, the power-removal device includes: the discharge switch circuit and a discharge drive circuit that opens and closes the discharge switch circuit. The discharge switch circuit is a circuit that closes the grounding wiring when the object to be inspected is in electrical contact with the probe card, and removes static electricity from the object to be inspected from the mounting table, and the object to be inspected is When the probe card is electrically contacted, the circuit for the ground wiring is opened, and the discharge from the mounting table is interrupted. In the invention of claim 1 or claim 2, the grounding wiring is connected to the mounting surface of the mounting table. Further, in the invention of claim 1 or claim 2, the detection switch circuit and the detection drive circuit are configured as relay switches. In the monitoring method of the static elimination device described in the fifth aspect of the present invention, the mounting table of the object to be inspected moves relative to the probe card, and the test object and the probe are electrically connected to the mounting table. The method of removing the above-described test object by closing the above-described mounting table by grounding the above-described mounting table by contacting the above-described 201137368 electrical property inspection of the object to be inspected, and the method of monitoring the electrical discharge of the above-mentioned mounting switch is characterized in that: The subject to be inspected and the probe card mounting table remove the static electricity, and close the above-described monitoring of the discharge switch circuit, and the electrostatic discharge of the test object and the probe card mounting table is turned on and opened in the first step. Further, in the above-described claim 6, the type of the discharge switch circuit of the present invention is a computer drive, and the monitoring and removal device is attached to the object to be inspected on the mounting table and the probe mounting table. The period of the electrical property inspection of the object to be inspected is closed for attaching the mounting table to the mounting table to remove the object to be inspected. In the above-described discharge switch circuit, the above-described discharge switch circuit is connected to the probe card mounting table to remove the static electricity, and the monitoring of the discharge switch circuit is closed, and the discharge switch circuit grounding wiring is monitored. In the first step of the static electricity removing device of the upper circuit, the circuit for the grounding wiring is not electrically contacted, and the second step is to stop the grounding when the discharging switch circuit is in electrical contact. The wiring circuit; and when the switch circuit is turned on, the above 3 steps are determined. In the program of the method for monitoring the load-carrying device, the static-eliminating card is relatively moved, and the probe card is electrically contacted to perform the upper portion, and the discharge circuit is used to electrically connect the static electricity from the above-mentioned static electricity. 1 step, the circuit for wiring from the grounding when the discharge switch circuit is not in electrical contact; 2 steps, the discharge switch circuit
S -9 201137368 係於上述被檢查體與上述探針卡電性接觸時爲了停止來自 上述載置台的靜電除去而打開上述接地用配線的電路；及 在上述第1步驟，上述放電開關電路打開時，判定上 述放電開關電路爲錯誤動作的第3步驟。 [發明的效果] 若根據本發明，則可提供一種進行被檢查體的電氣特 性檢查時，監視用以除去被處理體所帶的靜電的除電裝置 ，而可進行可靠度高的電氣特性檢査之除電裝置的監視裝 置、除電裝置的監視方法及除電裝置的監視用程式。 【實施方式】 以下，根據圖1、圖2所示的實施形態來說明本發明 〇 具備本實施形態的除電裝置的檢查裝置10是例如圖 1所示，具備：裝載機室11、探針器室12、及驅動控制 裝載機室11及探針器室12內的各種機器的控制裝置13 ，構成可在控制裝置1 3的控制下一邊驅動控制各種的機 器，一邊進行半導體晶圓W的電氣特性檢查。 在圖1中雖未圖示，但裝載機室11通常是具傭：以 卡匣單位來收納複數的半導體晶圓W的收納部、及對於 卡匣搬出入半導體晶圓W的晶圓搬送機構、及進行半導 體晶圓W的預對準的副吸盤。在裝載機室11內，在晶圓 搬送機構搬送半導體晶圓W的期間，於副吸盤預對準之 -10- 201137368 後，在與探針器室1 2之間進行半導體晶圓w的交接。 如圖1所不’探針器室12是具備：載置自晶圓搬送 機構接受的半導體晶圓W且移動於水平方向及上下方向 的載置台（以下稱爲「主吸盤」）M、及配置於此主吸盤 14上方的探針卡15、及進行此探針卡15的複數個探針 15A與主吸盤14上的半導體晶圓w的複數個電極焊墊的 對準之對準機構（未圖示）。在探針器室12內，藉由對 準機構來進行主吸盤14上的半導體晶圓w的複數個電極 焊墊與探針卡15的複數個探針15A的對準之後，使探針 卡15的複數個探針15A與半導體晶圓w的複數個電極焊 墊電性接觸而進行半導體晶圓W的電氣特性檢查。在進 行半導體晶圓W的電氣特性檢查時，經由探針卡1 5的上 面所配置的測試頭T在測試器（未圖示）與探針卡1 5之 間送收所定的訊號。另外，探針卡15是被固定於頂板16 的開口部。 如圖1所示’主吸盤14是具備：例如真空吸附半導 體晶圓W的吸盤頂部14A、及使吸盤頂部14A昇降的昇 降機構14B’構成可經由χγ平台17來移動於水平方向 且可經由昇降機構14B來使吸盤頂部14A昇降。在吸盤 頂部1 4 A的表面形成有由金等所構成的導體膜。在此吸 盤頂部1 4 A連接接地用配線1 8，如後述般可經由接地用 配線1 8來除去吸盤頂部1 4 A上的半導體晶圓W所帶的靜 電而往接地側放電。 在進行半導體晶圓W的電氣特性檢查時，因爲在半 -11 - 201137368 導體晶圓W所形成的多數個裝置帶靜電，所以會有因 此靜電而對各個裝置的電氣特性檢查造成不良影響的情 。於是，本實施形態是例如將圖1、圖2所示的除電裝 20設置於檢查裝置10的裝載機室11的上面，利用除 裝置20來除去主吸盤14上的半導體晶圓W所帶的靜 ，且可藉由除電裝置20所附帶的監視裝置來監視除電 置20。以下，根據圖1、圖2來說明有關本實施形態的 電裝置的監視裝置及使用此監視裝置之本發明的除電裝 的監視方法的一實施形態。用以實施本發明的監視方法 監視用程式是被儲存於控制裝置1 3的電腦的記億部， 動電腦進行半導體晶圓W的電氣特性檢査時被實行。 例如圖1、圖2所示，適用本實施形態的監視裝置 除電裝置20是具備：經由接地用配線1 8來除去主吸 14上的半導體晶圓W所帶的靜電之放電電路21、及監 放電電路21的監視裝置（以下稱爲「監視電路」）22 及分別驅動控制放電電路2 1及監視電路22的控制器 、及收納該等的外罩24,構成配置於裝載機室11的上 ，在控制器23的控制下驅動。在除電裝置20是經由連 器19來連接接地用配線18，藉由除電裝置20來除去 盤頂部1 4 A上的半導體晶圓W所帶的靜電，往接地側 電的同時，可藉由監視電路22來監視放電電路21。此 視電路22可經由放電電路2 1來監視除電裝置20。 如圖2所示，放電電路21具有：以能夠開閉接地 配線1 8的電路之方式連接至接地用配線1 8的放電開 爲 形 置 電 電 裝 除 置 的 驅 的 盤 視 、 23 面 接 吸 放 監 用 關 -12- 201137368 21A、及開閉放電開關電路21A的放電驅動電路21B， 成可在控制器2 3的控制下經由放電驅動電路2 1 B來驅 ’開閉接地用配線1 8的電路。亦即，控制器2 3是具有 出使除電裝置20驅動的指令訊號之輸出電路23A，根 來自輸出電路23A的指令訊號來驅動放電電路21。放 電路21是例如藉由繼電器開關所構成。 放電電路2 1是以以下的時序來開閉接地用配線1 8 電路。亦即，在控制裝置1 3的控制下，主吸盤14上的 導體晶圓W未與探針卡15接觸時，亦即爲了使半導體 圓W與探針卡15接離而昇降時或進行半導體晶圓W的 引傳遞時，在控制器23的控制下，放電開關電路21A 經由放電驅動電路2 1 B來驅動而閉合接地用配線1 8的 路’從主吸盤14除去半導體晶圓W所帶的靜電，往接 側放電，極力消除進行半導體晶圓 W的電氣特性檢查 的靜電影響，經常可進行安定之可靠度高的檢査。並且 在控制裝置1 3的控制下，主吸盤1 4上的半導體晶圓. 與探針卡1 5電性接觸，而進行半導體晶圓W的電氣特 檢查時，在控制器2 3的控制下，放電驅動電路2 1 B會 放電開關電路2 1 A驅動，而打開接地用配線1 8的電路 中斷從主吸盤1 4往接地側A的放電，使半導體晶圓W 電磁氣性的環境安定化。 又，如圖2所示，監視電路22是具有： 檢測開關電路2 2 A，其係被連接至從接地用配線 分岐的配線1 8 A，且檢測放電電路2 1的錯誤動作； 構 動 輸 據 電 的 半 晶 索 會 電 地 時 W 性 使 的 -13- 18 201137368 檢測驅動電路22B，其係開閉檢測開關電路22A ; 判定電路22C，其係經由檢測開關電路22B來判定放 電電路21的錯誤動作；及 基準電壓電路22D，其係對判定電路22C賦予基準電 壓位。 檢測開關電路22A及檢測驅動電路22B相對於連接 至吸盤頂部14A的接地用配線18，是與放電電路21 (放 電開關電路21A及放電驅動電路21B)並聯，例如與放電 電路21同樣構成爲繼電器開關。檢測開關電路22A是根 據來自控制器23的輸出電路23A的指令訊號，驅動檢測 驅動電路22B，以和放電開關電路21A相反的時序來開閉 配線1 8 A的電路。亦即，檢測開關電路22A是在放電開 關電路2 1 A閉合時打開，在放電開關電路2 1 A打開時閉 合》 監視電路22是以以下的時序來關閉配線1 8A的電路 。亦即，在控制裝置1 3的控制下，主吸盤1 4上的半導體 晶圓W未與探針卡15接觸時，換言之，在控制器23的 控制下，放電開關電路2 1 A將接地用配線1 8的電路閉合 而從吸盤頂部1 4A放電時，在控制器23的控制下，檢測 開關電路22A會經由檢測驅動電路22B來驅動而打開配 線1 8 A的電路。並且，在控制裝置1 3的控制下，主吸盤 14上的半導體晶圓W與探針卡15電性接觸而進行半導體 晶圓W的電氣特性檢查時，換言之，在控制器2 3的控制 下’放電開關電路2 1 A打開接地用配線1 8的電路，而中 -14- 201137368 斷來自吸盤頂部1 4 A的放電時，在控制器2 3的控制下， 檢測開關電路2 2 A會經由檢測驅動電路2 2 B來驅動而閉 合配線18A的電路。 檢測開關電路22A與判定電路22C是經由配線18A 來互相連接。在該等的檢測開關電路22A及判定電路22C 是經由配線1 8 A來分別施加固有的電壓，被施加於判定 電路22C的電壓是作爲相對於基準電壓的比較電壓利用。 在監視電路22中’例如因爲除電裝置20的繼續使用 ’一旦放電開關電路21A的可動接點與固定接點熔著， 則即使放電驅動電路2 1 B想要打開放電開關電路2 i a也 打不開。因此，當半導體晶圓W與探針卡1 5電性接觸進 行半導體晶圓W的電氣特性檢查時，雖原本必須打開放 電開關電路21A中斷來自吸盤頂部14A的放電，但放電 開關電路21A卻原封不動閉合，持續從吸盤頂部14A往 接地側放電。 此時，在監視電路22也是檢測開關22A會閉合配線 1 8 A，所以配線1 8 A也經由接地用配線1 8及放電開關 2 1 A來接地’判定電路22C的比較電壓低於基準電壓，從 判定電路22C往控制器23的輸入電路23B輸出顯示放電 開關電路21A的錯誤動作之判定訊號。控制器23會根據 輸入至輸入電路2 3 A的判定訊號來將L 〇 w訊號往控制裝 置1 3輸出，將放電電路2 1的錯誤動作報告控制裝置j 3 ，且從輸出電路23A往檢測驅動電路22B輸出Low訊號 ，而打開檢測開關22A。當放電電路2 1正常動作時，從 -15- 201137368 監視電路22的判定電路22C往控制裝置13輸出High 號作爲判定訊號，將無錯誤動作的情形報告控制裝置 ，且從輸出電路23A往檢測驅動電路22B輸出High訊 ，而保持閉合檢測開關22A。 其次，說明有關利用本實施形態的監視用程式之本 明的除電方法的一實施形態。 在進行半導體晶圓W的電氣特性檢查時，在裝載 室11內晶圓搬送機構會從收納部搬出半導體晶圓W， 副吸盤進行預對準之後，在探針器室12內在待機的主 盤14上載置半導體晶圓W。半導體晶圓W從卡匣載置 主吸盤14的吸盤頂部14A上爲止的期間，除電裝置 是放電電路21的放電開關電路21A會經由放電驅動電 2 1B來閉合接地用配線18的電路，除去吸盤頂部14A 帶的靜電，往接地側放電。 一旦晶圓搬送機構將半導體晶圓W載置於吸盤頂 14A上，則在吸盤頂部14A上真空吸附半導體晶圓W 後，主吸盤14會移動於水平方向。一旦半導體晶圓w 吸附固定於吸盤頂部1 4 A，則經由吸盤頂部1 4 A到那時 導體晶圓W所帶的靜電會經由吸盤頂部14A被除去。 主吸盤14移動的期間，主吸盤14是與對準機構互動進 半導體晶圓W的電極焊墊與探針卡15的探針15A之對 。其間雖也會在半導體晶圓W及吸盤頂部1 4 A帶靜電 但因爲吸盤頂部1 4 A被接地，所以至半導體晶圓w與 針1 5 A接觸的期間，半導體晶圓W及吸盤頂部1 4 A的 訊 13 發 機 在 吸 於 20 路 所 部 之 被 半 在 行 準 > 探 靜 -16- 201137368 電會經由吸盤頂部1 4 A被除去，所以不會有半導體晶圓 W帶靜電的情形。 半導體晶圓W的對準後，主吸盤14會水平移動至半 導體晶圓W內的最初裝置爲探針15A的正下方，在此位 置，主吸盤14的昇降機構14B會驅動，而半導體晶圓W 會上昇，裝置的電極焊墊與探針15A接觸。與此接觸同 時在控制器2 3的控制下，放電開關電路2 1 A會經由放電 驅動電路21B來打開接地用配線18的電路，解除吸盤頂 部14A的接地，中斷來自半導體晶圓W及吸盤頂部14A 的除電。 一旦最初的裝置檢查終了，則吸盤頂部1 4 A會經由 昇降機構14B來下降而解除裝置的電極焊墊與探針i5A 的接觸。與此下降動作同時，放電開關電路21A會經由 放電驅動電路2 1 B來閉合接地用配線1 8的電路，而從吸 盤頂部14A來除去檢查中在半導體晶圓w及吸盤頂部 1 4 A所帶的靜電，往接地側放電。 然後’主吸盤14會往水平方向移動而索引傳遞半導 體晶圓W，在其次的裝置到達探針15A的正下方之後， 吸盤頂部14A會經由昇降機構14B而上昇，裝置的電極 焊墊與探針1 5 A會電性接觸。在從吸盤頂部1 4 A的下降 動作到接觸動作的期間，使半導體晶圓W及吸盤頂部 1 4 A的靜電從吸盤頂部1 4 A除電。與裝置的電極焊墊和探 針1 5 A的接觸同時，在控制器2 3的控制下，放電開關電 路2 1 A會經由放電驅動電路2 1 B來打開接地用配線1 8的 -17- 201137368 電路’中斷來自吸盤頂部14A的除電。在此狀態下重複 裝置的電氣特性檢査。 一旦完成半導體晶圓W內的最後裝置的檢查，則吸 盤頂部14A會下降。與此下降動作同時，在控制器23的 控制下，放電開關電路21A會經由放電驅動電路21B來 閉合接地用配線18的電路，進行半導體晶圓W及吸盤頂 部14A的除電。然後，主吸盤14爲了交接檢查、除電完 畢的半導體晶圓W，而往裝載機室11側移動。在裝載機 室11是待機的晶圓搬送機構會接受主吸盤14上的半導體 晶圓W，使檢査完畢的半導體晶圓w回到卡匣後，從卡 匣搬出其次的半導體晶圓W。 在重複半導體晶圓W的電氣特性檢査的期間，放電 開關電路21A會熔著，會有放電開關電路21A錯誤動作 的情形。此情況，當主吸盤14移動而半導體晶圓W與探 針卡1 5電性接觸進行半導體晶圓的電氣特性檢査時，即 使在控制器23的控制下，放電驅動電路21B作動，放電 開關電路21A也無法打開接地用配線18的電路，仍舊欲 繼續來自吸盤頂部14A的放電》 如此的情況，在本實施形態中，因爲半導體晶圓W 的檢査中，監視電路2 2經常監視放電電路2 1，所以可快 速檢測出放電電路21的錯誤動作，中斷電氣特性檢査。 亦即，監視電路22的檢測開關電路22A會經由檢測驅動 電路2B來閉合配線1 8A的電路，所以檢測開關電路22A 會經由配線1 8 A及接地用配線1 8來連接至接地側。因此 -18- 201137368 ’從判定電路22C來施加於檢測開關電路22A的電壓會 急劇地降低’判定電路2 2 C的比較電壓小於基準電壓，以 Low訊號作爲判定訊號來輸出至控制器23的輸入電路 23B’將放電開關電路21A的錯誤動作，亦即以應遮斷接 地用配線1 8的電路之放電開關電路2 1 A未遮斷閉合的情 形作爲Low訊號來輸出至輸入電路23B，由控制器23報 告該情形給控制裝置1 3。控制裝置1 3會根據輸入的Lo w 訊號來中斷半導體晶圓W的電氣特性檢查。如此一旦放 電電路2 1有錯誤動作的情形，則會因爲中斷半導體晶圓 W的電氣特性檢查，所以不會損及檢查的可靠度的情形， 可進行安定之可靠度高的檢查。 如以上説明，若根據本實施形態，則由於除電裝置 20的監視裝置具備：與放電開關電路21 A連動且檢測出 放電開關電路2 1 A的錯誤動作之檢測開關電路22A、及開 閉檢測開關電路22A的檢測驅動電路22B、及經由檢測開 關電路22A來判定放電開關電路2 1 A的錯誤動作之判定 電路22C，因此可利用監視用程式來實行： 監視放電開關電路21A的第1步驟，該放電開關電 路21A是在半導體晶圓W與探針卡15未電性接觸時爲了 從主吸盤1 4除去靜電而閉合接地用配線1 8的電路； 監視放電開關電路2 1 A的第2步驟，該放電開關電 路2 1 A是在半導體晶圓W與探針卡1 5電性接觸時爲了停 止來自主吸盤1 4的靜電除去而打開接地用配線1 8的電路 :及 -19- 201137368 在第2步驟，放電開關電路21 A爲閉合時，判定放 電開關電路21A爲錯誤動作的第3步驟， 藉此，在進行半導體晶圓W的電氣特性檢查時，可 監視除去半導體晶圓W所帶的靜電之除電裝置20，而來 進行可靠度高的電氣特性檢查。 又，若根據本實施形態，則由於除電裝置20具有放 電開關電路2 1 A、及開閉放電開關電路2 1 A的放電驅動電 路21B，放電開關電路21A是在半導體晶圓W與探針卡 1 5未電性接觸時閉合接地用配線1 8的電路來從主吸盤14 除去半導體晶圓W所帶的靜電，在半導體晶圓W與探針 卡1 5電性接觸時打開接地用配線1 8的電路而中斷來自主 吸盤14的放電，因此在監視電路22的監視下可由主吸盤 14來安定地除去半導體晶圓W所帶的靜電，進而能夠進 行可靠度高的電氣特性檢查。 另外，本發明並非限於上述實施形態，亦可因應所需 適當變更各構成要素。 [產業上的利用可能性] 本發明可利用於半導體製造領域的檢查裝置。 【圖式簡單說明】 圖1是部分破斷顯示適用本發明的除電裝置的一實施 形態的檢查裝置的正面圖。 圖2是表示設置於圖1所示的檢查裝置的除電裝置的 -20- 201137368 構成方塊圖。 【主要元件符號說明】 1 〇 :檢查裝置 14 :主吸盤（載置台） 14A :吸盤頂部 1 5 :探針卡 1 5 A :探針 1 8 ·接地用配線 20 :除電裝置 2 1 :放電電路 2 1 A :放電開關電路 2 1 B :放電驅動電路 22 :監視電路 2 2 A :檢測開關電路 22B :檢測驅動電路 2 2 C :判定電路 W :半導體晶圓 -21- 5S -9 201137368 is a circuit for opening the grounding wiring to stop the static electricity removal from the mounting table when the object to be inspected is in electrical contact with the probe card; and in the first step, when the discharge switch circuit is turned on The third step of determining that the discharge switch circuit is an erroneous operation. [Effects of the Invention] According to the present invention, it is possible to provide a static eliminating device for removing static electricity from a target object when performing electrical property inspection of the object to be inspected, and to perform electrical property inspection with high reliability. A monitoring device for the static elimination device, a monitoring method for the static elimination device, and a monitoring program for the static elimination device. [Embodiment] Hereinafter, the present invention will be described with reference to the embodiment shown in Fig. 1 and Fig. 2, and the inspection device 10 including the static elimination device of the present embodiment is provided with, for example, a loader chamber 11 and a probe device. The chamber 12 and the control device 13 for driving and controlling the various types of devices in the loader chamber 11 and the prober chamber 12 constitute an electric device capable of driving and controlling various devices while controlling the various devices under the control of the control device 13. Feature check. Although not shown in FIG. 1, the loader chamber 11 is usually a storage unit that accommodates a plurality of semiconductor wafers W in a cassette unit, and a wafer transfer mechanism that carries in and out of the semiconductor wafer W from the cassette. And a secondary chuck that performs pre-alignment of the semiconductor wafer W. In the loader chamber 11, during the transfer of the semiconductor wafer W by the wafer transfer mechanism, the semiconductor wafer w is transferred between the sub-cup pre-alignment -10-201137368 and the probe chamber 1 2 . As shown in FIG. 1 , the prober chamber 12 includes a mounting table (hereinafter referred to as a "main suction cup") M that is placed on the semiconductor wafer W received by the wafer transfer mechanism and moved in the horizontal direction and the vertical direction, and Alignment mechanism of the probe card 15 disposed above the main chuck 14 and the alignment of the plurality of probes 15A of the probe card 15 with the plurality of electrode pads of the semiconductor wafer w on the main chuck 14 ( Not shown). In the prober chamber 12, after the alignment of the plurality of electrode pads of the semiconductor wafer w on the main chuck 14 and the plurality of probes 15A of the probe card 15 by the alignment mechanism, the probe card is made The plurality of probes 15A of 15 are electrically contacted with a plurality of electrode pads of the semiconductor wafer w to perform electrical characteristic inspection of the semiconductor wafer W. When the electrical characteristics of the semiconductor wafer W are inspected, the test head T disposed on the upper side of the probe card 15 transmits a predetermined signal between the tester (not shown) and the probe card 15. Further, the probe card 15 is an opening that is fixed to the top plate 16. As shown in Fig. 1, the main suction cup 14 is provided with, for example, a suction cup top 14A for vacuum-adsorbing the semiconductor wafer W and a lifting mechanism 14B' for lifting and lowering the suction top 14A, which can be moved in the horizontal direction via the χγ platform 17 and can be lifted and lowered. Mechanism 14B raises and lowers suction cup top 14A. A conductor film made of gold or the like is formed on the surface of the top portion of the chuck 1 4 A. At the top of the chuck 1 4 A, the grounding wiring 1 8 is connected, and the static electricity carried by the semiconductor wafer W on the top portion of the chuck 1 4 A can be removed by the grounding wiring 18 to be discharged to the ground side. When the electrical characteristics of the semiconductor wafer W are inspected, since a large number of devices formed by the conductor wafer W in the half-11 - 201137368 are electrostatically charged, there is a possibility that static electricity may adversely affect the electrical characteristics of each device. . Therefore, in the present embodiment, for example, the static eliminator 20 shown in Figs. 1 and 2 is placed on the upper surface of the loader chamber 11 of the inspection apparatus 10, and the semiconductor wafer W on the main chuck 14 is removed by the eliminator 20. The static electricity is removed, and the static electricity supply 20 can be monitored by the monitoring device attached to the static elimination device 20. Hereinafter, an embodiment of a monitoring device for an electric device according to the present embodiment and a monitoring method for a static elimination device according to the present invention using the monitoring device will be described with reference to Figs. 1 and 2 . Monitoring Method for Carrying Out the Invention The monitoring program is stored in the computer unit of the computer of the control device 13 and is executed when the computer performs electrical characteristic inspection of the semiconductor wafer W. For example, as shown in FIG. 1 and FIG. 2, the monitoring device static elimination device 20 of the present embodiment includes a discharge circuit 21 that removes static electricity from the semiconductor wafer W on the main suction 14 via the ground wiring 18, and A monitoring device (hereinafter referred to as "monitor circuit") 22 of the discharge circuit 21, a controller for driving and controlling the discharge circuit 21 and the monitoring circuit 22, and a cover 24 for accommodating the same are disposed on the loader chamber 11. It is driven under the control of the controller 23. In the static eliminator 20, the grounding wiring 18 is connected via the connector 19, and the static electricity of the semiconductor wafer W on the disk top 14A is removed by the static eliminator 20, and the grounding side is powered while being monitored. The circuit 22 monitors the discharge circuit 21. The view circuit 22 can monitor the neutralization device 20 via the discharge circuit 21. As shown in FIG. 2, the discharge circuit 21 has a disk that is connected to the grounding wire 1 8 so as to be able to open and close the grounding wiring 18, and is mounted on the disk. The circuit of the grounding wiring 1 8 is opened and closed by the discharge driving circuit 2 1 B under the control of the controller 23 by using the shutdown drive circuit 21B of the shutdown switch circuit 21A. That is, the controller 23 is an output circuit 23A having a command signal for driving the static eliminating device 20, and a command signal from the output circuit 23A drives the discharge circuit 21. The discharge circuit 21 is constituted by, for example, a relay switch. The discharge circuit 2 1 opens and closes the ground wiring 1 8 circuit at the following timing. That is, under the control of the control device 13, when the conductor wafer W on the main chuck 14 is not in contact with the probe card 15, that is, in order to lift the semiconductor circle W and the probe card 15 up and down, or to perform semiconductor At the time of the transfer of the wafer W, under the control of the controller 23, the discharge switch circuit 21A is driven by the discharge drive circuit 2 1 B to close the path of the ground wiring 1 'the semiconductor wafer W is removed from the main chuck 14 The static electricity is discharged to the junction side, and the electrostatic influence of the electrical characteristic inspection of the semiconductor wafer W is eliminated as much as possible, and the reliability of the stability is often checked. And under the control of the control device 13, the semiconductor wafer on the main chuck 14 is electrically contacted with the probe card 15, and when the electrical inspection of the semiconductor wafer W is performed, under the control of the controller 23. The discharge drive circuit 2 1 B drives the discharge switch circuit 2 1 A, and the circuit that opens the ground wiring 1 8 interrupts the discharge from the main chuck 14 to the ground side A, thereby stabilizing the environment of the semiconductor wafer W. . Moreover, as shown in FIG. 2, the monitoring circuit 22 has the detection switch circuit 2 2 A connected to the wiring 1 8 A branched from the ground wiring, and detects the malfunction of the discharge circuit 2 1; According to the electric semi-crystal, the detection drive circuit 22B is turned on and off, and the determination circuit 22C determines the error of the discharge circuit 21 via the detection switch circuit 22B. The operation and the reference voltage circuit 22D give the determination circuit 22C a reference voltage level. The detection switch circuit 22A and the detection drive circuit 22B are connected in parallel with the discharge circuit 21 (discharge switch circuit 21A and discharge drive circuit 21B) with respect to the ground wiring 18 connected to the top portion 14A of the chuck, and are configured as a relay switch, for example, similarly to the discharge circuit 21. . The detection switch circuit 22A drives the detection drive circuit 22B based on the command signal from the output circuit 23A of the controller 23 to open and close the circuit of the wiring 1 8 A at a timing opposite to that of the discharge switch circuit 21A. That is, the detection switch circuit 22A is opened when the discharge switch circuit 2 1 A is closed, and is closed when the discharge switch circuit 2 1 A is turned on. The monitor circuit 22 closes the wiring 1 8A at the following timing. That is, under the control of the control device 13, when the semiconductor wafer W on the main chuck 14 is not in contact with the probe card 15, in other words, under the control of the controller 23, the discharge switch circuit 2 1 A is grounded. When the circuit of the wiring 18 is closed and discharged from the top portion 14A of the chuck, under the control of the controller 23, the detecting switch circuit 22A is driven by the detecting driving circuit 22B to open the circuit of the wiring 1 8 A. Further, under the control of the control device 13, the semiconductor wafer W on the main chuck 14 is electrically contacted with the probe card 15 to perform electrical characteristic inspection of the semiconductor wafer W, in other words, under the control of the controller 23. 'Discharge switch circuit 2 1 A turns on the circuit of grounding wiring 1 8 , and while middle -14 - 201137368 breaks the discharge from the top of the chuck 1 4 A , under the control of controller 23 , the detection switch circuit 2 2 A passes The drive circuit 2 2 B is detected to drive and close the circuit of the wiring 18A. The detection switch circuit 22A and the determination circuit 22C are connected to each other via the wiring 18A. In the detection switch circuit 22A and the determination circuit 22C, the respective voltages are applied via the wiring 1 8 A, and the voltage applied to the determination circuit 22C is used as a comparison voltage with respect to the reference voltage. In the monitoring circuit 22 'e.g., because the continuous use of the static eliminating device 20' is once the movable contact of the discharging switch circuit 21A and the fixed contact are fused, even if the discharge driving circuit 2 1 B wants to open the discharge switching circuit 2 ia open. Therefore, when the semiconductor wafer W is electrically contacted with the probe card 15 to perform electrical characteristic inspection of the semiconductor wafer W, the discharge switch circuit 21A must be turned on to interrupt the discharge from the top 14A of the chuck, but the discharge switch circuit 21A is intact. It does not move and continues to discharge from the top 14A of the suction cup to the ground side. At this time, in the monitoring circuit 22, the detection switch 22A also closes the wiring 18 A. Therefore, the wiring 1 8 A is also grounded via the ground wiring 1 8 and the discharge switch 2 1 A. The comparison voltage of the determination circuit 22C is lower than the reference voltage. A determination signal indicating an erroneous operation of the discharge switch circuit 21A is output from the determination circuit 22C to the input circuit 23B of the controller 23. The controller 23 outputs the L 〇w signal to the control device 13 according to the determination signal input to the input circuit 2 3 A, reports the error action of the discharge circuit 2 1 to the control device j 3 , and detects the drive from the output circuit 23A. The circuit 22B outputs a Low signal and turns on the detection switch 22A. When the discharge circuit 21 operates normally, the high-number is output from the determination circuit 22C of the monitoring circuit 22 of the -15-201137368 to the control device 13 as a determination signal, and the case where no error is caused is reported to the control device, and the drive is driven from the output circuit 23A. The circuit 22B outputs a High signal while keeping the detection switch 22A closed. Next, an embodiment of the power-removing method of the present invention using the monitoring program of the present embodiment will be described. When the electrical characteristics of the semiconductor wafer W are inspected, the wafer transfer mechanism in the load chamber 11 carries out the semiconductor wafer W from the storage portion, and the secondary chuck is pre-aligned, and then the standby master is placed in the probe chamber 12 The semiconductor wafer W is placed on the 14th. While the semiconductor wafer W is placed on the chuck top 14A of the main chuck 14 from the cassette, the discharge device 21A of the discharge circuit 21 discharges the circuit for the ground wiring 18 via the discharge drive circuit 21, and removes the chuck. The static electricity on the top 14A is discharged to the ground side. Once the wafer transfer mechanism mounts the semiconductor wafer W on the top 14A of the chuck, the main chuck 14 is moved in the horizontal direction after the semiconductor wafer W is vacuum-adsorbed on the top 14A of the chuck. Once the semiconductor wafer w is adsorbed and fixed to the top of the chuck 1 4 A, the static electricity carried by the conductor wafer W via the top of the chuck 1 4 A is removed via the top 14A of the chuck. While the main chuck 14 is moving, the main chuck 14 is opposed to the electrode pad of the semiconductor wafer W and the probe 15A of the probe card 15 which interact with the alignment mechanism. In the meantime, although the semiconductor wafer W and the top of the chuck 1 4 A are electrostatically charged, because the top 14 4 A of the chuck is grounded, the semiconductor wafer W and the top of the chuck 1 are in contact with the semiconductor wafer w and the needle 15 A. 4 A's signal 13 is in the middle of the 20-way section. > Detecting -16-201137368 The electricity will be removed via the top of the suction cup 1 4 A, so there will be no semiconductor wafer W with static electricity. situation. After the alignment of the semiconductor wafer W, the main chuck 14 is horizontally moved to the first portion of the semiconductor wafer W directly under the probe 15A. At this position, the lifting mechanism 14B of the main chuck 14 is driven, and the semiconductor wafer is driven. W will rise and the electrode pads of the device will be in contact with the probe 15A. At the same time as the contact, under the control of the controller 23, the discharge switch circuit 2 1 A opens the circuit of the ground wiring 18 via the discharge drive circuit 21B, cancels the grounding of the top 14A of the chuck, and interrupts the top of the semiconductor wafer W and the chuck. 14A power removal. Once the initial device inspection is completed, the top of the suction cup 14A is lowered by the lifting mechanism 14B to release the contact of the electrode pads of the device with the probe i5A. At the same time as this lowering operation, the discharge switch circuit 21A closes the circuit of the ground wiring 1 via the discharge driving circuit 2 1 B, and removes the semiconductor wafer w and the top of the chuck 1 4 A from the top 14A of the chuck. Static electricity, discharge to the ground side. Then, the main suction cup 14 moves in the horizontal direction and the index transfers the semiconductor wafer W. After the next device reaches the probe 15A, the suction cup top 14A rises via the lifting mechanism 14B, and the electrode pads and probes of the device are lifted. 1 5 A will be in electrical contact. During the period from the falling action of the top of the chuck 1 4 A to the contact operation, the static electricity of the semiconductor wafer W and the top of the chuck 1 4 A is removed from the top of the chuck 1 4 A. Simultaneously with the electrode pad of the device and the contact of the probe 15 A, under the control of the controller 23, the discharge switch circuit 2 1 A opens the grounding wiring 1 through the discharge drive circuit 2 1 B - 17 - 201137368 The circuit 'interrupts the power removal from the top 14A of the chuck. Repeat the electrical characteristics check of the device in this state. Once the inspection of the last device within the semiconductor wafer W is completed, the top 14A of the chuck will drop. At the same time as the lowering operation, under the control of the controller 23, the discharge switch circuit 21A closes the circuit of the ground wiring 18 via the discharge drive circuit 21B, and removes the semiconductor wafer W and the chuck top portion 14A. Then, the main chuck 14 is moved toward the loader chamber 11 side in order to transfer the semiconductor wafer W which has been inspected and discharged. The wafer transfer mechanism that is in standby in the loader chamber 11 receives the semiconductor wafer W on the main chuck 14, and returns the inspected semiconductor wafer w to the cassette, and then carries out the next semiconductor wafer W from the cassette. While the electrical characteristic inspection of the semiconductor wafer W is repeated, the discharge switch circuit 21A is fused, and the discharge switch circuit 21A may malfunction. In this case, when the main chuck 14 moves and the semiconductor wafer W is in electrical contact with the probe card 15 to perform electrical characteristic inspection of the semiconductor wafer, even under the control of the controller 23, the discharge driving circuit 21B is actuated, and the discharge switch circuit 21A cannot open the circuit of the ground wiring 18, and still wants to continue the discharge from the top 14A of the chuck. In the present embodiment, the monitor circuit 2 often monitors the discharge circuit 2 in the inspection of the semiconductor wafer W. Therefore, the malfunction of the discharge circuit 21 can be quickly detected, and the electrical characteristic check can be interrupted. That is, the detection switch circuit 22A of the monitor circuit 22 closes the circuit of the wiring 18A via the detection drive circuit 2B, so that the detection switch circuit 22A is connected to the ground side via the wiring 1 8 A and the ground wiring 1 8 . Therefore, -18-201137368 'The voltage applied from the determination circuit 22C to the detection switch circuit 22A is drastically lowered'. The comparison voltage of the determination circuit 2 2 C is smaller than the reference voltage, and the Low signal is used as the determination signal to be output to the input of the controller 23. The circuit 23B' outputs the erroneous operation of the discharge switch circuit 21A, that is, the discharge switch circuit 2 1 A of the circuit that should block the ground wiring 1 8 is not blocked and is output as a Low signal to the input circuit 23B, and is controlled by the control. The device 23 reports this to the control device 13. The control device 13 interrupts the electrical characteristic inspection of the semiconductor wafer W based on the input Lo w signal. When the discharge circuit 21 has an erroneous operation, the electrical characteristics of the semiconductor wafer W are interrupted, so that the reliability of the inspection is not impaired, and the reliability of the stability can be checked. As described above, according to the present embodiment, the monitoring device of the static elimination device 20 includes the detection switch circuit 22A that detects the malfunction of the discharge switch circuit 2 1A in conjunction with the discharge switch circuit 21 A, and the open/close detection switch circuit. The detection drive circuit 22B of 22A and the determination circuit 22C for determining the malfunction of the discharge switch circuit 2 1 A via the detection switch circuit 22A can be implemented by the monitoring program: the first step of monitoring the discharge switch circuit 21A, the discharge The switch circuit 21A is a circuit for closing the ground wiring 1 8 in order to remove static electricity from the main chuck 14 when the semiconductor wafer W is not in electrical contact with the probe card 15; the second step of monitoring the discharge switch circuit 2 1 A, The discharge switch circuit 2 1 A is a circuit for opening the ground wiring 1 8 to stop the static electricity removal from the main chuck 14 when the semiconductor wafer W is electrically contacted with the probe card 15 : and -19-201137368 at the second When the discharge switch circuit 21A is closed, it is determined that the discharge switch circuit 21A is the third step of the erroneous operation, thereby performing the electrical characteristic inspection of the semiconductor wafer W. The static electricity removing device 20 for removing static electricity carried by the semiconductor wafer W can be monitored to perform high-accuracy electrical property inspection. Further, according to the present embodiment, the static elimination device 20 includes the discharge switch circuit 2 1 A and the discharge drive circuit 21B that opens and closes the discharge switch circuit 2 1 A, and the discharge switch circuit 21A is on the semiconductor wafer W and the probe card 1 5 When the electrical contact is not made, the circuit of the grounding wiring 1 8 is closed to remove the static electricity carried by the semiconductor wafer W from the main chuck 14, and the ground wiring 1 8 is opened when the semiconductor wafer W is in electrical contact with the probe card 15. Since the circuit interrupts the discharge from the main chuck 14, the static electricity carried by the semiconductor wafer W can be safely removed by the main chuck 14 under the supervision of the monitor circuit 22, and the electrical property inspection with high reliability can be performed. Further, the present invention is not limited to the above embodiment, and various constituent elements may be appropriately changed as needed. [Industrial Applicability] The present invention can be utilized in an inspection apparatus in the field of semiconductor manufacturing. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a front elevational view showing, in part, an inspection apparatus showing an embodiment of a static elimination device to which the present invention is applied. Fig. 2 is a block diagram showing the construction of -20-201137368 of the static eliminating device provided in the inspection apparatus shown in Fig. 1. [Main component symbol description] 1 〇: Inspection device 14: Main suction cup (mounting table) 14A: Suction cup top 1 5 : Probe card 1 5 A : Probe 1 8 · Grounding wiring 20 : Static elimination device 2 1 : Discharge circuit 2 1 A : Discharge switch circuit 2 1 B : Discharge drive circuit 22 : Monitor circuit 2 2 A : Detection switch circuit 22B : Detection drive circuit 2 2 C : Decision circuit W : Semiconductor wafer - 2 - 5