TW201130018A - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same

Info

Publication number
TW201130018A
TW201130018A TW099134112A TW99134112A TW201130018A TW 201130018 A TW201130018 A TW 201130018A TW 099134112 A TW099134112 A TW 099134112A TW 99134112 A TW99134112 A TW 99134112A TW 201130018 A TW201130018 A TW 201130018A
Authority
TW
Taiwan
Prior art keywords
semiconductor device
wafer
thinning
manufacturing
end point
Prior art date
Application number
TW099134112A
Other languages
English (en)
Inventor
Yoshihisa Nonogaki
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Publication of TW201130018A publication Critical patent/TW201130018A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26533—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically inactive species in silicon to make buried insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)
TW099134112A 2009-10-16 2010-10-06 Semiconductor device and method of manufacturing the same TW201130018A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009239673A JP2011086828A (ja) 2009-10-16 2009-10-16 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW201130018A true TW201130018A (en) 2011-09-01

Family

ID=43878650

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099134112A TW201130018A (en) 2009-10-16 2010-10-06 Semiconductor device and method of manufacturing the same

Country Status (4)

Country Link
US (1) US20110089524A1 (zh)
JP (1) JP2011086828A (zh)
KR (1) KR20110042009A (zh)
TW (1) TW201130018A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110494989A (zh) * 2017-04-21 2019-11-22 深圳帧观德芯科技有限公司 制造半导体辐射检测器的方法

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI419203B (zh) 2008-10-16 2013-12-11 Sumco Corp 具吸附槽之固態攝影元件用磊晶基板、半導體裝置、背照式固態攝影元件及其製造方法
US9882073B2 (en) 2013-10-09 2018-01-30 Skorpios Technologies, Inc. Structures for bonding a direct-bandgap chip to a silicon photonic device
US8867578B2 (en) 2009-10-13 2014-10-21 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser for a cable TV transmitter
US9316785B2 (en) 2013-10-09 2016-04-19 Skorpios Technologies, Inc. Integration of an unprocessed, direct-bandgap chip into a silicon photonic device
US11181688B2 (en) 2009-10-13 2021-11-23 Skorpios Technologies, Inc. Integration of an unprocessed, direct-bandgap chip into a silicon photonic device
US8559470B2 (en) 2009-10-13 2013-10-15 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser and a phase modulator
US8615025B2 (en) * 2009-10-13 2013-12-24 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser
US8630326B2 (en) 2009-10-13 2014-01-14 Skorpios Technologies, Inc. Method and system of heterogeneous substrate bonding for photonic integration
US8605766B2 (en) 2009-10-13 2013-12-10 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser and a mach zehnder modulator
US8611388B2 (en) * 2009-10-13 2013-12-17 Skorpios Technologies, Inc. Method and system for heterogeneous substrate bonding of waveguide receivers
US9922967B2 (en) 2010-12-08 2018-03-20 Skorpios Technologies, Inc. Multilevel template assisted wafer bonding
US9977188B2 (en) 2011-08-30 2018-05-22 Skorpios Technologies, Inc. Integrated photonics mode expander
JP6095903B2 (ja) 2012-06-15 2017-03-15 浜松ホトニクス株式会社 固体撮像装置の製造方法及び固体撮像装置
JP6095904B2 (ja) * 2012-06-15 2017-03-15 浜松ホトニクス株式会社 固体撮像装置の製造方法及び固体撮像装置
JP6265594B2 (ja) * 2012-12-21 2018-01-24 ラピスセミコンダクタ株式会社 半導体装置の製造方法、及び半導体装置
US9664855B2 (en) 2014-03-07 2017-05-30 Skorpios Technologies, Inc. Wide shoulder, high order mode filter for thick-silicon waveguides
US10003173B2 (en) 2014-04-23 2018-06-19 Skorpios Technologies, Inc. Widely tunable laser control
WO2015183992A1 (en) 2014-05-27 2015-12-03 Skorpios Technologies, Inc. Waveguide mode expander using amorphous silicon
EP3286587A4 (en) 2015-04-20 2018-12-26 Skorpios Technologies, Inc. Vertical output couplers for photonic devices
CN106252365A (zh) * 2015-06-13 2016-12-21 中芯国际集成电路制造(上海)有限公司 Bsi图像传感器的制造方法
US10649148B2 (en) 2017-10-25 2020-05-12 Skorpios Technologies, Inc. Multistage spot size converter in silicon photonics
CN109711319B (zh) * 2018-12-24 2023-04-07 安徽高哲信息技术有限公司 一种粮食不完善粒图像识别样本库建立的方法及系统
US11360263B2 (en) 2019-01-31 2022-06-14 Skorpios Technologies. Inc. Self-aligned spot size converter
WO2021040677A1 (en) * 2019-08-23 2021-03-04 Hewlett-Packard Development Company, L.P. Epitaxial-silicon wafer with a buried oxide layer
CN111244099A (zh) * 2020-01-20 2020-06-05 长江存储科技有限责任公司 3d存储器件的制造方法
CN113838875B (zh) * 2020-06-23 2024-05-17 芯恩（青岛）集成电路有限公司 基于裸晶圆的图像传感器的制备方法
CN112490113A (zh) * 2020-11-12 2021-03-12 武汉新芯集成电路制造有限公司 一种半导体器件的制作方法
KR20230012058A (ko) * 2021-03-30 2023-01-25 양쯔 메모리 테크놀로지스 씨오., 엘티디. 기판의 매립 정지층을 이용한 3차원 반도체 디바이스 제조 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030194846A1 (en) * 2002-04-11 2003-10-16 International Business Machines Corp. Medium dose simox over a wide BOX thickness range by a multiple implant, multiple anneal process
US20070052050A1 (en) * 2005-09-07 2007-03-08 Bart Dierickx Backside thinned image sensor with integrated lens stack
JP4844101B2 (ja) * 2005-11-29 2011-12-28 株式会社Ｓｕｍｃｏ 半導体装置の評価方法および半導体装置の製造方法
JP2010062291A (ja) * 2008-09-03 2010-03-18 Sumco Corp 半導体基板及びその製造方法
JP2010062452A (ja) * 2008-09-05 2010-03-18 Sumco Corp 半導体基板の製造方法
US8357592B2 (en) * 2009-06-02 2013-01-22 Sumco Corporation Method and apparatus for manufacturing semiconductor substrate dedicated to semiconductor device, and method and apparatus for manufacturing semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110494989A (zh) * 2017-04-21 2019-11-22 深圳帧观德芯科技有限公司 制造半导体辐射检测器的方法
US11380812B2 (en) 2017-04-21 2022-07-05 Shenzhen Xpectvision Technology Co., Ltd. Methods of making semiconductor radiation detector

Also Published As

Publication number Publication date
US20110089524A1 (en) 2011-04-21
JP2011086828A (ja) 2011-04-28
KR20110042009A (ko) 2011-04-22

Similar Documents

Publication Publication Date Title
TW201130018A (en) Semiconductor device and method of manufacturing the same
US20160087083A1 (en) Semiconductor device and method of fabricating same
MY192488A (en) Solar cell emitter region fabrication using ion implantation
TW200616095A (en) Ultra-thin body super-steep retrograde well (SSRW) fet devices
GB2497259B (en) Butted SOI junction isolation structures and devices and method of fabrication
GB2488961A (en) Thin-box metal backgate extremely thin SOI device
TW201613097A (en) Semiconductor device and method of fabricating non-planar circuit device
GB2517854A (en) Shallow trench isolation structures
JP2013508981A5 (zh)
CN103178093B (zh) 高压结型场效应晶体管的结构及制备方法
SG139678A1 (en) Method for producing bonded wafer
CN105428241B (zh) 具有屏蔽栅的沟槽栅功率器件的制造方法
EP2579296A4 (en) MANUFACTURING PROCESS FOR JOINT WAFERS
CN106024600B (zh) 短沟道nfet装置
SG157315A1 (en) Method for fabricating semiconductor devices with shallow diffusion regions
JP5194508B2 (ja) Ｓｏｉウエーハの製造方法
JP2012049466A5 (zh)
TW200731361A (en) Semiconductor devices including impurity doped region and methods of forming the same
TW201715644A (zh) Ｓｏｉ基底及其製備方法
WO2013016273A3 (en) High voltage mosfet and method of making the same
TW200719438A (en) Semiconductor device and method of manufacturing the same
US8618554B2 (en) Method to reduce ground-plane poisoning of extremely-thin SOI (ETSOI) layer with thin buried oxide
EP2416352A3 (en) Methods for fabricating trench metal oxide semiconductor field effect transistors
TW200727364A (en) Method for preparing gate oxide layer
JP2011071243A5 (zh)