TW201129273A - Method for manufacturing connection structure - Google Patents

Method for manufacturing connection structure Download PDF

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Publication number
TW201129273A
TW201129273A TW99128487A TW99128487A TW201129273A TW 201129273 A TW201129273 A TW 201129273A TW 99128487 A TW99128487 A TW 99128487A TW 99128487 A TW99128487 A TW 99128487A TW 201129273 A TW201129273 A TW 201129273A
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TW
Taiwan
Prior art keywords
conductive material
anisotropic conductive
material layer
compound
layer
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TW99128487A
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Chinese (zh)
Inventor
Shigeo Mahara
Takashi Kubota
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Sekisui Chemical Co Ltd
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Publication of TW201129273A publication Critical patent/TW201129273A/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/36Assembling printed circuits with other printed circuits
    • H05K3/361Assembling flexible printed circuits with other printed circuits

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Combinations Of Printed Boards (AREA)
  • Wire Bonding (AREA)
  • Conductive Materials (AREA)
  • Non-Insulated Conductors (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

To provide a method for manufacturing a connection structure which enhances conduction reliability when electrodes of connecting object members are electrically connected. The manufacturing method for the connection structure 1 includes a process in which an anisotropic conductive material containing conductive particles is coated on the upper face 2a of a first connecting object member 2 to form an anisotropic conductive material layer 3A, a process in which light is irradiated on the anisotropic conductive material layer 3A to promote curing of the anisotropic conductive material layer 3A and the anisotropic conductive material layer 3A is changed into an anisotropic conductive material layer 3A of a B-stage, and a process in which a second connecting object member 4 is further laminated on the upper face 3a of the anisotropic conductive material layer 3B of the B-stage, and by applying heat to the anisotropic conductive material layer 3B of the B-stage, the anisotropic conductive material layer 3B of the B-stage is cured.

Description

201129273 / 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種使用包含複數個導電性粒子之異向性 導電材料之連接構造體之製造方法,更詳細而言,例如係 關於一種將可撓性印刷基板、玻璃基板及半導體晶片等各 種連接對象構件之電極間經由導電性粒子加以電性連接之 連接構造體之製造方法。 【先前技術】 異向性導電漿料、異向性導電油墨及異向性導電接著劑 寻異向性導電材料已廣為人知。該等異向性導電材料係於 漿料、油墨或樹脂中分散有複數個導電性粒子。 上述異向性導電材料例如係用於可撓性印刷基板與玻璃 基板之連接(F〇G(FiImonGIass,玻璃上薄膜))、半導體曰 二與可撓性印刷基板之連接(C0F(Chip 〇n心,薄膜= 晶))、或半導體晶片與玻璃基板之連接(c〇G(chip⑽ Glass,玻璃覆晶等。 =為上述異向性導電材料之—例,下述專利文⑴ :異向性導電材料揭示有含有環氧樹脂、橡膠狀聚合物粒 ^熱活性之潛伏性環氧硬化劑、高軟化點聚合物粒子及 ^生拉子之異向性導電材料。藉由該異向性導電材料 體晶片之電極與破璃基板之電極電性連接時, :玻:基板上塗佈包含導電性粒子之異向性導電材二 =科導體晶片,進行加熱及加Μ。藉此,使里向性 導電材料硬化,且辆ά道 /、向尸生 、二 電性粒子將電極間電性連接,獲 150398.doc 201129273 得連接構造體° [先前技術文獻] [專利文獻] [專利文獻1]曰本專利特開2000-345010號公報 【發明内容】 [發明所欲解決之問題] 於上述電極間之電性連接時,塗佈於玻璃基板上之異向 性導電材料及該異向性導電材料中所含之導電性粒子有於 硬化前大幅度地流動之情形。因此,有無法將由異向性導 電材料所形成之硬化物層及導電性粒子配置於特定區域之 情形。進而,有無法於應連接之上下電極間配置導電性粒 子,或不應連接之相鄰電極間經由複數個導電性粒子而電 性連接之情形。因此,有所得之連接構造體之導通可靠性 較低之情形。 又,亦有以分注器所塗佈之異向性導電材料,由於滴液 現象而擴散超出塗佈寬度,使異向性導電材料無意地渗出 至特定區域以外的情形。 本發明之目的在於提供—種於將連接對象構件之電極間 ^性連接之情形時,可提高導通可靠性之連接構造體之製 造方法。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a bonded structure using an anisotropic conductive material comprising a plurality of conductive particles, and more particularly, for example, A method of manufacturing a connection structure in which electrodes of various connection target members such as a flexible printed circuit board, a glass substrate, and a semiconductor wafer are electrically connected via conductive particles. [Prior Art] Anisotropic conductive paste, anisotropic conductive ink, and anisotropic conductive adhesive Anisotropic conductive materials have been widely known. The anisotropic conductive material is a plurality of conductive particles dispersed in a slurry, an ink or a resin. The anisotropic conductive material is used, for example, for the connection between a flexible printed circuit board and a glass substrate (F〇G (FiImonGIass)), and the connection between the semiconductor substrate and the flexible printed circuit board (C0F (Chip 〇n) Heart, film = crystal)), or connection of a semiconductor wafer to a glass substrate (c〇G (chip (10) Glass, glass flip-chip, etc. = is the above-mentioned anisotropic conductive material - for example, the following patent (1): anisotropy The conductive material discloses an anisotropic conductive material containing an epoxy resin, a rubbery polymer particle, a latent epoxy hardener, a high softening point polymer particle, and a ferrite. When the electrode of the material body wafer is electrically connected to the electrode of the glass substrate, the glass substrate is coated with an anisotropic conductive material containing conductive particles, and the conductor wafer is heated and twisted. The conductive material is hardened, and the tunnel is electrically connected to the corpse and the two electric particles to obtain a connection structure. [Previous Technical Literature] [Patent Literature] [Patent Document 1 ]曰本专利开开2000-345010号SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] When the electrodes are electrically connected, the anisotropic conductive material applied to the glass substrate and the conductive particles contained in the anisotropic conductive material are In the case where the cured layer and the conductive particles formed of the anisotropic conductive material are not disposed in a specific region, there is a possibility that the conductive layer cannot be disposed between the lower electrodes. The particles or the adjacent electrodes that should not be connected are electrically connected via a plurality of conductive particles. Therefore, the connection structure obtained has a low reliability of conduction. The coated anisotropic conductive material diffuses beyond the coating width due to the dripping phenomenon, causing the anisotropic conductive material to inadvertently bleed out beyond a specific region. The object of the present invention is to provide a connection object In the case where the electrodes of the members are connected to each other, the method of manufacturing the connection structure capable of improving the conduction reliability can be improved.

[解決問題之技術手段J 造方=本發明之較廣泛之態樣,提供一種連接構造體之製 :你1二其包含以下步驟:於第1連接對象構件之上表面 :佈包含導雷 電性叔子之異向性#電材料,形成異向性導電 150398.doc 201129273 材料層’ ϋ由對上述異向性導電材料層照射光,而進行上 述異向性導電材料層之硬化,使上述異向性導電材料舞Β[Technical means for solving the problem J Manufacture = a broader aspect of the present invention, providing a connection structure: You have the following steps: on the surface of the first connection member: the cloth contains lightning conductivity The anisotropy of the uncle #Electrical material, forming anisotropic conductivity 150398.doc 201129273 Material layer 'ϋThe light is irradiated to the above-mentioned layer of anisotropic conductive material, and the above-mentioned anisotropic conductive material layer is hardened to make the above-mentioned anisotropy Conductive material maiko

階化丨及於經Β階化之上,f B 丨匕化之上述異向性導電材料層之上表面 而積層第2連接對象構件,藉由對經_化之上述里向性 電材料層賦予熱,而使該經崎化之異向性導f㈣層硬 化。 於本發明之連接構造體之製造方法之某特定態樣中於 形成上述異向性導電材料層之步驟、及使上述異向性導雷 材料層B階化之步驟中,一邊沴佑 Τ 透坌佈上述異向性導電材料, 一邊對上述異向性導電材料層照射光。 於本發明之連接構造體之製造方法之其他特定態樣中, 於形成上述異向性導電材料層之步驟與使上述異向性導電 材料層續化之步驟中,於塗佈上述異向性導電材料之同 時或於塗佈後立即對上述異向性導電材料層照射光。 於本發明之連接構造體之製造方法之進而其他特定態樣 中,於形成上述異向性導電材料層之步驟與使上述異向性 導電材料層BP身化之步驟中,自塗佈上述異向性導電材料 起至照射光為止之時間為0〜3秒之範圍内。 於本發明之連接構造體之製造方法之其他特定態樣中, 作為上述異向性導電材料,使用包含硬化性化合物、熱硬 化劑、光硬化起始劑及導電性粒子之異向性導電材料7 於本發明之連接構造體之製造方法之進而其他特定熊樣 中’於形成上述異向性導電材料層之步驟與使上述異=性 導電材料層B階化之步驟中,使用包含分注器與連接於該 150398.doc 201129273 分注器之光照射裝置之複合裝置。 [發明之效果] 本發明之連接構造體之製造方法中,藉由對異向性導電 材料層照射光,而進行上述異向性導電材料層之硬化,使 上述異向性導電材料層8階化後,對經3階化之異向性導 電材料層賦予熱,因此可抑制異向性導電材料層及該異向 性導電材料層中所含之導電性粒子之流動。因此,可將由 異向性導電材料所形成之硬化物層及導電性粒子配置於特 定區域。因此,於將第丨、第2連接對象構件之電極間電性 連接之情料,可提高導通可隸1如,可將應連接之 上下電極間藉由導電性粒子容易地連接,且可抑制不應連 接之相鄰電極間經由複數個導電性粒子而連接。又,使以 分注器所塗佈之異向性導電材料於滴液之前硬化,因此不 易擴散超出塗佈寬度,可抑制異向性導電材料無意地滲出 至特定區域以外。 【實施方式】 之具體實施形態進行 意性地表示藉由本發 方法而獲得之連接構 以下,一邊參照圖式一邊對本發明 說明,藉此明確本發明。 圖1中’以部分切缺前視剖面圖示 明之一實施形態之連接構造體之製造 造體之一例。 圖1所示之連接構造體1具有於第1連接對象構件2之上表 面2a經由硬化物層3而連接有第2連接對象構件4之構造: 硬化物層3係藉由使包含複數個導電性粒子$之異向^電 150398.doc 201129273 材料硬化而形成 複數個電極2b。 數個電極4b。電 粒子5而電性連接 。於第1連接對象構件2之上表面23設置有 於第2連接對象構件4之下表面4a設置有複 極2 b與電極4 b係藉由j個或複數個導電性 連接構造體1巾’制《基板料帛i連接對象構件 2,使用半導體晶片作為第2連接對象構件4。第卜第 接對象構件並無特別限定。作為第卜第2連接對象構件, 具體可列舉··何體晶片、電容器及二極體等電子零件, f及印刷基板、可繞性印刷基板及玻璃基板等電路基板 圖1所示之連接構造體1例如能以如下方式獲得。 如圖2⑷所示,準備於上表面h具有電極2b之第i連接對 象構件2 °其次’於第1連接對象構件2之上表面2a塗佈包 合複數個導電性粒子5之異向性導電材料’於第】連接對象 構件2之上表面2a形成異向性導電材料層3A。此時,較好 的是於電極2 b上配置1個或複數個導電性粒子5。 其-人,如圖2(b)所不,藉由對異向性導電材料層3八照射 光而進行異向性導電材料層3 A之硬化。進行異向性導電 材料層3A之硬化,使異向性導電材料層3人進行B階化。於 第1連接對象構件2之上表面2a形成經B階化之異向性導電 材料層3B。 較好的疋一邊於第1連接對象構件2之上表面2^塗佈異向 ^生導電材料,一邊對異向性導電材料層3 A照射光。進而, 亦較好的疋於在第1連接對象構件2之上表面2 a塗佈異向性 •50398.doc 201129273 導電材料之同時或於塗佈後立即對異向性導電材料層3八照 射光於以上述方式進行塗佈及光之照射之情形時,可進 V抑制異向性導電材料層之流動。因此,可進一步提高 所付之連接構造體丨之導通可#性。自於第1連接對象構件 2之上表面2a塗佈異向性導電材料起至照射光為止之時間 較好的是G〜3秒之範圍内,更好為〇〜2秒之範圍内。自於第 1連接對象構件2之上表面23接觸異向性導電材料起至照射 光為止之時間較好的是滿足上述範圍。 為適度進行異向性導電材料層3A之硬化,照射光時 ::強度較好的是o—ww之範圍内。照射光時所 =之光源並無特別限定。作為該光源,例如可列舉於波 長⑽以下具有充分之發光分佈之光源等。又,作為光 源之具體例’例如可列舉低壓水銀燈、中麼水銀燈、 水銀燈、超高壓水銀燈 。1 燈、及金屬函化物燈等。燈黑、先燈、微波激發水銀 =如圖2⑷所示’於經B階化之異向性導電 3B之上表面33積層第2連接對象構件 件2之上表一極2b、與第2連接對象二=構 h之電極外相對向之方式,積層第2連接對象構件4 進而’於積層第2連接對象構件4時, 層3B賦予埶,M 卜估s人, 丨王等電材枓 ·、,、猎此使異向性導電材料層3B進,£ !成硬化物層3。然而,亦可於積層第2連: 則對異向性導電材料層祀職予熱。進而 之 連接對象構件4之後對異向性導電材料層_ =積層弟2 150398.doc 201129273 藉由賦予熱而使異向性導電材料層3B硬化時之加熱溫度 之較好下限為16〇〇c ’較好上限為25〇°c,更好上限為 2〇〇。(:。 較好的是於使異向性導電材料層3B硬化時進行加壓。藉 由利用加壓以電極2b與電極4b壓縮導電性粒子5,可增大 電極2b、4b與導電性粒子5之接觸面積。因此可提高導通 可靠性。 藉由使異向性導電材料層3B硬化,第i連接對象構件2與 第2連接對象構件4經由硬化物層3而連接。又,電極以與 電極4b經由導電性粒子5而電性連接。藉此,可獲得圖j所 不之連接構造體1。本實施形態中,由於併用光硬化與熱 硬化,故可於短時間内使異向性導電材料硬化。 本實施形態中,於形成異向性導電材料層3A並使該異向 性導電材料層3A進行B階化時,可合適地使用圖3(a)所示 之複合裝置。 圖3(a)所示之複合裝置^包含分注器12、及連接於該分 注器12之光照射襞置13。分注器12包含用以在内部填充異 向性導電材料之注射器12a、與握持該注射器12a之外周面 之握持部12b。光照射裝置13包含光照射裝置本體ua與光 照射部13b。複合裝置丨丨中,握持部12b與光照射裝置本體 13a連接。因此,可縮小分注器12與光照射裝置13之距 離,即,可縮小分注器12之排出部與光照射部丨补之距 離。進而,可使分注器12與光照射裝置13以相同速度容易 地移動。再者,注射器l2a與光照射裝置本體Ua亦$直接 I50398.doc 201129273 連接。 如圖3⑷所示’於進行塗佈及光之照射時,-邊使複合 裝置U向箭頭A之方向移動,一邊自注射器心於第ι連接 對象構件2之上表面2a塗饰昱而,地道+ :怖呉向性導電材料,形成異向性 導電材料層3A。又,一邊分枕 . 邊丄佈邊自連接於分注器12之 光fl?、射裝置13之光照射_ 兀*<、耵。卩13b如前碩B所示般對異向性導電 材料層3 A照射光。 就進一步抑制於第1連接對象構件2之上表面减形成之 異向性導電材料層从及該異向性導電材料層則所含之 導f性粒子5之流動的觀點而言’較好的是—邊使分注器 12與光照射裝置13移動,一邊進行塗佈與光之照射。進 而,就高精度地控制至照射光為止之時間之觀點而言,較 好的是使分注器12與光照射裝置13以相同速度移動。然 而,亦可不使複合裝置U移動,而使平台31向箭頭a之方 向移動。 如圖4⑷所示,亦可使用分注器12及未連接於該分注器 12之光照射裝置21。光照射裝置21係與光照射裝㈣同樣 /匕έ光照射裝置本體21 a與光照射部2丨b。光照射裝置u 係構成為可對較光照射裝置13更廣之區域照射光。 於使用分注器12及未連接於該分注器12之光照射裝置21 之it形時,例如圖4(a)所示,於第丨連接對象構件2之上方 光…、射裝置21。其次,一邊使分注器】2於第1連接對 構件2與光照射裝置2 1之間向箭頭A之方向移動,—邊自 、射器12a於第1連接對象構件2之上表面2a塗佈異向性導 I50398.doc 201129273 電材料’形成異向性導電材料層3A。繼而,如圖4(b)所 不於異向性導電材料之塗佈結束之後自配置於第1連 接對象構件2之上方之光照射裝置21之光照射部21b,對異 向性導電材料層3A照射光。光之照射例如係於塗佈異向性 導電材料之同時或於塗佈後立即進行。 光照射裝置21較好的是於塗佈時配置於第丨連接對象構 件2之上方。於此情形時,於塗佈後可迅速地照射光。較 好的是對塗佈後對異向性導電材料層从之整個區域一起照 射光。於此情形時,可使異向性導電材料層3八更均勻地B 階化。 藉由使用圖3(a)或圖4(a)所示之裝置,可於在第丨連接對 象構件2之上表面23塗佈異向性導電材料之同時或於塗佈 後立即,容易地對異向性導電材料層3Λ照射光。 本發明之連接構造體之製造方法中所使用之異向性導電 材料並無特別限定。就進一步抑制第丨連接對象構件2之上 表面2a所塗佈之異向性導電材料或該異向性導電材料中所 含之導電性粒子之流動的觀點而言,上述異向性導電材料 較好的是含有硬化性化合物、熱硬化劑、光硬化起始劑及 導電性粒子。 塗佈前之上述異向性導電材料之25t及2 5 rpm下之黏度 較好的是20-200 Pa.s之範圍内。於此情形時,例如於第1 連接對象構件2之上表面2a塗佈異向性導電材料後,可進 一步抑制硬化前之異向性導電材料之流動,進而,可容易 地去除電極與導電性粒子之間之樹脂成分,可增大電極與 150398.doc 201129273 導電性粒子之接觸面積。進而’於筮 於第1連接對象構 面為凹凸之情形時’可於該凹凸之表面充分地填 : ^ ^ 丨承又,異向性導電材料 中導電性粒子難以沈澱,可提高導電性粒子之分1性f 上述異向性導電材料之製造方法並無特。作為 述異向性導電材料之製造方法,例如可列舉調配上述硬化 性化合物、上述熱硬化劑、上述光硬化起始劑、上述 性粒子、及視需要添加之其他成 便用订星式攪拌機等 充分混合之製造方法。 本發明之連接構造體之製造方法例如w於可撓性印刷 基板與玻璃基板之連接(FQG(Film Gn Glass))、半導體晶片 與可撓性印刷基板之連接(c〇F(Chip 〇n Film))、或半=體 晶片與玻璃基板之連接(COG(Chip 〇n Glass))等。其中 本發明之連接構造體之製造方法適合於c〇g用途。本發明 之連接構造體之製造方法可合適地用於半導體晶片與玻璃 基板之連接。然而,本發明之連接構造體之製造方法之使 用並不限定於上述用途。 COG用途中,特別是大多情況下難以利用異向性導電材 料之導電性粒子將半導體晶片與玻璃基板之電極間確實地 連接。例如,於COG用途之情形時,有時半導體晶片之相 鄰電極閭及玻璃基板之相鄰電極間之間隔為1〇〜2〇 ^⑺左 右,且大多情況下形成有微細之配線。即便形成有微細之 配線’亦可利用本發明之連接構造體之製造方法將半導體 晶片與玻璃基板之電極間高精度地連接,可提高導通可靠 150398.doc 201129273 性。 以下’對上述異向性導電材料中所含之各成分之詳細内 谷進行說明。 (硬化性化合物) 作為上述硬化性化合物,可使用先前公知之硬化性化合 物,並無特別限定。上述硬化性化合物可僅使用丨種,亦 可併用2種以上。 作為上述硬化性化合物,可列舉光及熱硬化性化合物、 光硬化性化合物、以及熱硬化性化合物。上述光及熱硬化 性化合物具有光硬化性與熱硬化性。上述光硬化性化合物 例如具有光硬化性,且不具有熱硬化性。上述熱硬化性化 合物例如不具有光硬化性,且具有熱硬化性。 上述硬化性化合物含有光及熱硬化性化合物、或含有光 硬化性化合物與熱硬化性化合物。於上述硬化性化合物含 有上述光及熱硬化性化合物之情形時,上述硬化性化合物 亦可不含光硬化性化合物及熱硬化性化合物中之至少一 種,亦可除上述光及熱硬化性化合物以外,進而含有光硬 化性化合物及熱硬化性化合物中之至少一種。於上述硬化 性化合物不含上述光及熱硬化性化合物之情形時,上述硬 化性化合物含有光硬化性化合物與熱硬化性化合物。 就容易控制異向性導電材料之硬化之觀點而言,上述硬 化性化合物較好的是含有上述光及熱硬化性化合物與光硬 化性化合物及熱硬化性化合物中之至少一種,或含有光硬 化性化合物與熱硬化性化合物。上述硬化性化合物更好的 150398.doc 13 201129273 是含有光硬化性化合物與熱硬化性化合物β 上述硬化性化合物並無特別限定。作為上述硬化性化合 物,可列舉:環氧化合物、環硫化合物、(尹基)丙稀酸系 化合物、酚化合物、胺基化合物、不飽和聚酯化合物、聚 胺基甲酸酯化合物、聚矽氧化合物及聚醯亞胺化合物等。 上述(甲基)丙烯酸係指丙烯酸或甲基丙婦酸。 於併用光硬化性化合物與熱硬化性化合物之情形時,光 硬化性化合物與熱硬化性化合物之使用量係根據光硬化性 化合物與熱硬化性化合物之種類而適當調整。上述異向性 導電材料較好的是以重量比計以i : 99〜9〇 : 1〇含有光硬化 性化合物與熱硬化性化合物,更好的是以5: 95〜6〇: 4〇含 有’進而較好的是以20 : 80〜40 : 60含有。 [熱硬化性化合物] 就容易控制異向性導電材料之硬化,或進—步提高連接 構造體之導通可靠性之觀點而言,上述硬化性化合物較好 的是含有環氧化合物及環硫化合物(含環硫乙基之化合物) 中之至少-種’更好的是含有環硫化合物。就提高異向性 導電材料之硬化性之觀既而 械點而s ’上述硬化性化合物100重 里伤中,上述環硫化合物之含晉夕h k ;< 3里之較好下限為丨〇重量份, 更好下限為20重量份,較好 御量份。 車乂子上限為5〇重量份’更好上限為 上述環氧化合物及上 香環。作為上述芳香環 環、并四苯環、篇環、 述環硫化合物分別較好的是具有芳 ’可列舉:笨環、萘環、蒽環、菲 聯伸二苯環、四芬環、芘環、并五 150398.doc -14- 201129273 苯環、起環及茈環等。其中’上述芳香環較好的是苯環、 萘環或蒽環,更好的是苯環或萘環。 環硫化合物具有環硫乙基而非環氧基,因此可於低溫下 迅速硬化。即’與具有環氧基之環氧化合物相比,具有環石危 乙基之環硫化合物由於環硫乙基而可於更低之溫度下硬化。 就於低溫下更快地硬化之觀點而言,上述環硫化合物較 好的是具有下述式(1)、(2)、(5)、(7)或(8)所示之結構,更 好的是具有下述式(1)或(2)所示之結構。 [化1]The second connection member is laminated on the upper surface of the anisotropic conductive material layer on the surface of the above-mentioned anisotropic conductive material layer by f B , and the above-mentioned intermediate conductive material layer is formed by crystallization The heat is imparted to harden the layer of the anisotropically oriented f (four) layer. In a specific aspect of the method for fabricating the connection structure of the present invention, in the step of forming the anisotropic conductive material layer and the step of grading the anisotropic conductive material layer B, The anisotropic conductive material is rubbed to irradiate light onto the anisotropic conductive material layer. In another specific aspect of the method for fabricating the connection structure of the present invention, the step of forming the anisotropic conductive material layer and the step of continuing the layer of the anisotropic conductive material are applied to the anisotropy The above-mentioned anisotropic conductive material layer is irradiated with light at the same time as the conductive material or immediately after coating. In still another specific aspect of the method for fabricating a connection structure of the present invention, the step of forming the anisotropic conductive material layer and the step of forming the anisotropic conductive material layer BP are self-coated The time from the directional conductive material to the irradiation of light is in the range of 0 to 3 seconds. In another specific aspect of the method for producing a bonded structure of the present invention, an anisotropic conductive material containing a curable compound, a thermosetting agent, a photocuring initiator, and conductive particles is used as the anisotropic conductive material. 7 in the method for producing a connection structure according to the present invention, in another specific bear sample, in the step of forming the anisotropic conductive material layer and the step of grading the hetero-conductive conductive material layer B, the use-containing dispensing And a composite device connected to the light illumination device of the 150398.doc 201129273 dispenser. [Effects of the Invention] In the method for producing a connection structure according to the present invention, the anisotropic conductive material layer is cured by irradiating light to the anisotropic conductive material layer, and the anisotropic conductive material layer is 8 steps. After the addition, heat is applied to the third-order anisotropic conductive material layer, so that the flow of the anisotropic conductive material layer and the conductive particles contained in the anisotropic conductive material layer can be suppressed. Therefore, the cured layer and the conductive particles formed of the anisotropic conductive material can be disposed in a specific region. Therefore, in the case where the electrodes of the second and second connection members are electrically connected to each other, the conduction can be improved, and the upper and lower electrodes to be connected can be easily connected by the conductive particles, and can be suppressed. Adjacent electrodes that should not be connected are connected via a plurality of conductive particles. Further, since the anisotropic conductive material coated by the dispenser is hardened before dropping, it is less likely to diffuse beyond the coating width, and the anisotropic conductive material can be prevented from inadvertently oozing out of the specific region. [Embodiment] The present invention is exemplified by the present invention. The present invention will be described with reference to the drawings. In Fig. 1, an example of a manufacturing structure of a connecting structure according to one embodiment of the front cutaway sectional view is shown. The connection structure 1 shown in FIG. 1 has a structure in which the second connection member 4 is connected to the upper surface 2a of the first connection member 2 via the cured layer 3: The cured layer 3 is made to include a plurality of conductive layers. Sexual particle $ of the opposite ^ ^ 150398.doc 201129273 The material hardens to form a plurality of electrodes 2b. Several electrodes 4b. The particles 5 are electrically connected. The upper surface 23 of the first connection object member 2 is provided on the lower surface 4a of the second connection object member 4, and the repolarization 2b and the electrode 4b are provided by j or a plurality of conductive connection structures 1 The substrate substrate 连接i is connected to the object member 2, and a semiconductor wafer is used as the second connection target member 4. The object to be connected is not particularly limited. Specific examples of the second connection target member include an electronic component such as a wafer, a capacitor, and a diode, and a circuit structure such as a printed circuit board, a flexible printed circuit board, and a glass substrate. The body 1 can be obtained, for example, in the following manner. As shown in Fig. 2 (4), the i-th connection member 2 having the electrode 2b on the upper surface h is prepared. Secondly, the anisotropic conduction of the plurality of electroconductive particles 5 is applied to the upper surface 2a of the first connection member 2. The material 'on the second surface 2a of the connection object member 2 forms the anisotropic conductive material layer 3A. In this case, it is preferred to dispose one or a plurality of conductive particles 5 on the electrode 2b. The person-human, as shown in Fig. 2(b), hardens the anisotropic conductive material layer 3 A by irradiating the anisotropic conductive material layer 3 with light. The anisotropic conductive material layer 3A is hardened, and the anisotropic conductive material layer is B-staged. A B-staged anisotropic conductive material layer 3B is formed on the upper surface 2a of the first connection object member 2. It is preferable that the anisotropic conductive material layer 3A is irradiated with light while applying an anisotropic conductive material to the upper surface 2 of the first connection member 2. Further, it is also preferable to apply an anisotropic property to the surface 2a of the first connection member 2a or to irradiate the anisotropic conductive material layer 8 immediately after coating. When the coating is applied in the above manner and the light is irradiated, the flow of the anisotropic conductive material layer can be suppressed by V. Therefore, it is possible to further improve the conduction of the connected structure 丨. The time from the application of the anisotropic conductive material to the upper surface 2a of the first connection member 2 to the irradiation of light is preferably in the range of G to 3 seconds, more preferably in the range of 〇 2 seconds. It is preferable that the time from when the upper surface 23 of the first connection member 2 contacts the anisotropic conductive material to the illumination light satisfies the above range. In order to moderately harden the anisotropic conductive material layer 3A, when the light is irradiated, the intensity is preferably in the range of o-ww. The light source when the light is irradiated is not particularly limited. Examples of the light source include a light source having a sufficient light emission distribution with a wavelength (10) or less. Further, as a specific example of the light source, for example, a low pressure mercury lamp, a medium mercury lamp, a mercury lamp, or an ultrahigh pressure mercury lamp can be cited. 1 lamp, metal halide lamp, etc. Lamp black, first lamp, microwave excited mercury = as shown in Fig. 2 (4) 'on the B-staged anisotropic conductive 3B upper surface 33 laminated 2nd connection object member 2 above the first pole 2b, and the second connection In the case where the electrode 2 is opposite to the electrode of the structure h, the second connection member 4 is further laminated, and when the second connection member 4 is laminated, the layer 3B is given 埶, M 卜 s, 丨王, and the like. , hunting this layer of anisotropic conductive material 3B into a hardened layer 3. However, it is also possible to build a second connection: the heat of the anisotropic conductive material layer. Further, after the connection member 4 is bonded to the anisotropic conductive material layer _ = laminated layer 2 150398.doc 201129273 The lower limit of the heating temperature when the anisotropic conductive material layer 3B is hardened by imparting heat is 16 〇〇 c 'The upper limit is better than 25〇°c, and the upper limit is 2〇〇. (: It is preferable to pressurize when the anisotropic conductive material layer 3B is hardened. By compressing the conductive particles 5 by the electrode 2b and the electrode 4b by pressurization, the electrodes 2b, 4b and the conductive particles can be enlarged. The contact area of 5. Therefore, the conduction reliability can be improved. By curing the anisotropic conductive material layer 3B, the i-th connection object member 2 and the second connection object member 4 are connected via the cured layer 3. Further, the electrodes are The electrode 4b is electrically connected via the conductive particles 5. Thereby, the connection structure 1 shown in Fig. j can be obtained. In the present embodiment, since photohardening and thermal curing are used in combination, anisotropy can be obtained in a short time. In the present embodiment, when the anisotropic conductive material layer 3A is formed and the anisotropic conductive material layer 3A is B-staged, the composite device shown in Fig. 3(a) can be suitably used. The composite device shown in 3(a) includes a dispenser 12, and a light irradiation device 13 connected to the dispenser 12. The dispenser 12 includes a syringe 12a for filling an anisotropic conductive material therein, And a grip portion 12b that grips the outer peripheral surface of the syringe 12a. 13 includes a light irradiation device body ua and a light irradiation portion 13b. In the composite device, the grip portion 12b is connected to the light irradiation device body 13a. Therefore, the distance between the dispenser 12 and the light irradiation device 13 can be reduced, that is, The distance between the discharge portion of the dispenser 12 and the light irradiation portion is reduced. Further, the dispenser 12 and the light irradiation device 13 can be easily moved at the same speed. Further, the syringe 12a and the light irradiation device body Ua are also Directly I50398.doc 201129273 is connected. As shown in Fig. 3 (4), when the coating and the light are irradiated, the composite device U is moved in the direction of the arrow A, and the surface of the object member 2 is connected from the center of the syringe to the first object. 2a is coated with enamel, and the tunnel +: 呉 呉 conductive material forms an anisotropic conductive material layer 3A. In addition, one side is divided into pillows. The edge of the cloth is connected to the light of the dispenser 12 and the radiation device 13 The light irradiation _ 兀 * <, 耵. 卩 13b illuminates the anisotropic conductive material layer 3 A as shown in the former B. Further suppresses the inversion of the surface of the first connection member 2 a layer of a conductive material and a layer of the anisotropic conductive material From the viewpoint of the flow of the f-particles 5, it is preferable that the application and the light are irradiated while the dispenser 12 and the light irradiation device 13 are moved. Further, the illumination is controlled with high precision. From the viewpoint of the time until the time, it is preferable to move the dispenser 12 and the light irradiation device 13 at the same speed. However, the platform 31 may be moved in the direction of the arrow a without moving the composite device U. As shown in Fig. 4 (4), a dispenser 12 and a light irradiation device 21 that is not connected to the dispenser 12 may be used. The light irradiation device 21 is the same as the light irradiation device (4) / the light irradiation device body 21 a and the light irradiation portion 2丨b. The light irradiation device u is configured to emit light to a wider area of the light irradiation device 13. When the dispenser 12 and the light-emitting device 21 that is not connected to the dispenser 12 are used, for example, as shown in Fig. 4(a), the device 21 is irradiated above the second connection member 2. Next, the dispenser 2 is moved in the direction of the arrow A between the first connection pair member 2 and the light irradiation device 2 1 , and the emitter 12a is coated on the upper surface 2a of the first connection member 2 Anisotropic Conductivity I50398.doc 201129273 The electrical material 'forms an anisotropic conductive material layer 3A. Then, as shown in FIG. 4(b), after the application of the anisotropic conductive material is completed, the light-irradiating portion 21b of the light-irradiating device 21 disposed above the first connection-target member 2 is opposed to the anisotropic conductive material layer. 3A illuminates the light. Irradiation of light is carried out, for example, at the same time as the application of the anisotropic conductive material or immediately after coating. The light irradiation device 21 is preferably disposed above the second connection member 2 at the time of coating. In this case, light can be quickly irradiated after coating. Preferably, the coated anisotropic conductive material layer illuminates light together from the entire area after coating. In this case, the anisotropic conductive material layer 3 can be more uniformly B-staged. By using the apparatus shown in FIG. 3(a) or FIG. 4(a), it is possible to easily apply the anisotropic conductive material to the upper surface 23 of the second connection object member 2, or immediately after coating. The anisotropic conductive material layer 3 is irradiated with light. The anisotropic conductive material used in the method for producing a bonded structure of the present invention is not particularly limited. The above anisotropic conductive material is further suppressed from the viewpoint of further suppressing the flow of the anisotropic conductive material coated on the upper surface 2a of the second connection object member 2 or the conductive particles contained in the anisotropic conductive material. Preferably, it contains a curable compound, a thermosetting agent, a photohardening initiator, and conductive particles. The viscosity of the above anisotropic conductive material before coating at 25t and 25 rpm is preferably in the range of 20-200 Pa.s. In this case, for example, after the anisotropic conductive material is applied to the upper surface 2a of the first connection member 2, the flow of the anisotropic conductive material before curing can be further suppressed, and further, the electrode and the conductivity can be easily removed. The resin composition between the particles increases the contact area of the electrode with the conductive particles of 150398.doc 201129273. Further, when the first connection target surface is uneven, the surface of the uneven surface can be sufficiently filled: ^ ^ 丨, and the conductive particles are difficult to precipitate in the anisotropic conductive material, and the conductive particles can be improved. The method of producing the above-mentioned anisotropic conductive material is not particularly limited. Examples of the method for producing the anisotropic conductive material include the above-mentioned curable compound, the above-mentioned thermosetting agent, the photocuring initiator, the above-mentioned particles, and other optional star-type agitator which are added as needed. A fully mixed manufacturing method. The manufacturing method of the connection structure of the present invention is, for example, a connection between a flexible printed circuit board and a glass substrate (FQG (Film Gn Glass)), and a connection between a semiconductor wafer and a flexible printed circuit board (c〇F (Chip 〇n Film) )), or a connection between a half-body wafer and a glass substrate (COG (Chip 〇n Glass)). The method for producing the joined structure of the present invention is suitable for use in c〇g. The method of manufacturing the connection structure of the present invention can be suitably used for the connection of a semiconductor wafer to a glass substrate. However, the use of the method of producing the joined structure of the present invention is not limited to the above use. In the COG application, in many cases, it is difficult to reliably connect the semiconductor wafer and the electrode of the glass substrate by using the conductive particles of the anisotropic conductive material. For example, in the case of COG use, the interval between the adjacent electrode of the semiconductor wafer and the adjacent electrode of the glass substrate may be about 1 〇 2 〇 ^ (7), and in many cases, fine wiring is formed. Even if a fine wiring is formed, the semiconductor wafer and the electrode of the glass substrate can be connected with high precision by the manufacturing method of the connection structure of the present invention, and the conduction reliability can be improved. Hereinafter, the detailed inner valley of each component contained in the above anisotropic conductive material will be described. (Curable compound) As the curable compound, a conventionally known curable compound can be used, and it is not particularly limited. The curable compound may be used alone or in combination of two or more. Examples of the curable compound include light, a thermosetting compound, a photocurable compound, and a thermosetting compound. The above-mentioned light and thermosetting compound have photocurability and thermosetting property. The photocurable compound has, for example, photocurability and does not have thermosetting properties. The above thermosetting compound does not have photocurability, for example, and has thermosetting properties. The curable compound contains a light and a thermosetting compound, or a photocurable compound and a thermosetting compound. In the case where the curable compound contains the light and the thermosetting compound, the curable compound may not contain at least one of the photocurable compound and the thermosetting compound, and may be in addition to the light and thermosetting compound. Further, at least one of a photocurable compound and a thermosetting compound is contained. In the case where the curable compound does not contain the light and thermosetting compound, the hardening compound contains a photocurable compound and a thermosetting compound. The curable compound preferably contains at least one of the light and thermosetting compound, the photocurable compound, and the thermosetting compound, or contains photohardening, from the viewpoint of easily controlling the curing of the anisotropic conductive material. Compounds and thermosetting compounds. The curable compound is more preferably 150398.doc 13 201129273 is a photocurable compound and a thermosetting compound β. The curable compound is not particularly limited. Examples of the curable compound include an epoxy compound, an episulfide compound, an (yinyl)acrylic acid compound, a phenol compound, an amine compound, an unsaturated polyester compound, a polyurethane compound, and a polyfluorene compound. Oxygen compounds and polyimine compounds. The above (meth)acrylic acid means acrylic acid or methacrylic acid. When the photocurable compound and the thermosetting compound are used in combination, the amount of the photocurable compound and the thermosetting compound to be used is appropriately adjusted depending on the type of the photocurable compound and the thermosetting compound. The anisotropic conductive material is preferably a weight ratio of i: 99 to 9 Å: 1 〇 contains a photocurable compound and a thermosetting compound, more preferably 5: 95 to 6 〇: 4 〇 'It is better to contain 20: 80~40: 60. [Thermosetting compound] The curable compound preferably contains an epoxy compound and an episulfide compound from the viewpoint of easily controlling the hardening of the anisotropic conductive material or further improving the conduction reliability of the bonded structure. At least one of the compounds containing a cyclic thioethyl group is more preferably an episulfide compound. In order to improve the hardenability of the anisotropic conductive material, the point of the above-mentioned hardening compound 100 is severely damaged, and the preferred lower limit of the above-mentioned episulfide compound is 夕 hk; <3; The lower limit is preferably 20 parts by weight, preferably a part by weight. The upper limit of the scorpion is 5 Å by weight. The upper limit is the above epoxy compound and the upper scent. The aromatic ring, the tetracene ring, the ring ring, and the episulfide compound preferably each have an aromatic group: a stupid ring, a naphthalene ring, an anthracene ring, a phenanthrene biphenyl ring, a tetrafen ring, an anthracene ring. And five 150398.doc -14- 201129273 benzene ring, ring and ring and so on. Wherein the above aromatic ring is preferably a benzene ring, a naphthalene ring or an anthracene ring, more preferably a benzene ring or a naphthalene ring. The episulfide compound has an episulfide group instead of an epoxy group, and thus can be rapidly hardened at a low temperature. Namely, the episulfide compound having a cyclohexadiene ethyl group can be hardened at a lower temperature due to the episulfide group than the epoxy compound having an epoxy group. The above-mentioned episulfide compound preferably has a structure represented by the following formula (1), (2), (5), (7) or (8) from the viewpoint of hardening at a lower temperature, and more preferably Preferably, it has a structure represented by the following formula (1) or (2). [Chemical 1]

上述式(1)中,R1及R2分別表示碳數1〜5之伸烷基,R3、 R4、R5及R6之4個基中2〜4個基表示氫’ R3、R4、尺5及以 中並非氫之基表示下述式(3)所示之基。 上述式(1)中之R3、R4、R5及R6之4個基可全部為氫。 R3、R4、R5及R6之4個基中!個或2個為下述式(3)所示之 基,且R3、R4、R5及R6之4個基中並非下述式(3)所示之 基的基為氫亦可。 [化2]In the above formula (1), R1 and R2 each represent an alkylene group having 1 to 5 carbon atoms, and 2 to 4 of the 4 groups of R3, R4, R5 and R6 represent hydrogen 'R3, R4, 5 and 5 The group which is not hydrogen is a group represented by the following formula (3). The four groups of R3, R4, R5 and R6 in the above formula (1) may all be hydrogen. 4 bases of R3, R4, R5 and R6! The two or two of the groups represented by the following formula (3), and the group of the four groups of R3, R4, R5 and R6 which are not represented by the following formula (3) may be hydrogen. [Chemical 2]

…式(3) 150398.doc -15- 201129273 上述式(3)中,R7表示碳數1〜5之伸烷基。 [化3]Formula (3) 150398.doc -15- 201129273 In the above formula (3), R7 represents an alkylene group having 1 to 5 carbon atoms. [Chemical 3]

上述式(2)中,R51及R52分別表示碳數1〜5之伸烷基, R5 3、R54、R5 5、R5 6、R5 7及R5 8之6個基中4〜6個基表示 氫,R5 3、R54、R5 5、R5 6、R5 7及R58中並非氫之基表示 下述式(4)所示之基。 上述式(2)中之 R5 3、R5 4、R5 5、R5 6、R5 7 及 R5 8 之 6個 基可全部為氫。R53、R54、R55、R56、R57及R58之6個 基中1個或2個為下述式(4)所示之基,且R53、R54、 R55、R5 6、R5 7及R58中並非下述式(4)所示之基的基為 敷亦可。 [化4] *In the above formula (2), R51 and R52 each represent an alkylene group having 1 to 5 carbon atoms, and 4 to 6 of 6 groups of R5 3, R54, R5 5, R5 6 , R 5 7 and R 5 8 represent hydrogen. The group other than hydrogen in R5 3, R54, R5 5, R5 6 , R5 7 and R58 represents a group represented by the following formula (4). The six groups of R5 3, R5 4, R5 5, R5 6 , R5 7 and R5 8 in the above formula (2) may all be hydrogen. One or two of the six groups of R53, R54, R55, R56, R57 and R58 are a group represented by the following formula (4), and R53, R54, R55, R5 6, R5 7 and R58 are not lower. The base of the group represented by the formula (4) may be applied. [4] *

…式(4) 上述式(4)中,R59表示碳數1〜5之伸烷基。 •16· 150398.doc 201129273 [化5] R101 R103 \〇 R110In the above formula (4), R59 represents an alkylene group having 1 to 5 carbon atoms. •16·150398.doc 201129273 [Chemical 5] R101 R103 \〇 R110

s ...式(5) 上述式(5)中’ R101&R102分別表示碳數ι〜5之伸烧基。 R103、Rl〇4、R1〇5、R1〇6、R1〇7、R1〇8、R1〇9 及 rii。之 8個基中6〜8個基表示氫。 上述式(5)中之 Rl〇3、Rl〇4、R105、Rl〇6、Ri〇7、 R108、Rl〇9及R110中並非氫之基表示下述式(6)所示之 基。R103、Rl〇4、R105、R106、Rl〇7、R108、R109 及 R11〇之8個基可全部為氫。R103、R104、R105、R106、 R107、Rl〇8、Rl〇9及R110之8個基中1個或2個為下述式(6) 所示之基,且 Rl〇3、R104、R105、Rl〇6、R107、R108、 R109及Rll〇中並非下述式(6)所示之基的基為氫亦可。 [化6]s Formula (5) In the above formula (5), 'R101&R102 respectively represent a stretching group having a carbon number of 1-5. R103, Rl〇4, R1〇5, R1〇6, R1〇7, R1〇8, R1〇9 and rii. 6 to 8 of the 8 bases represent hydrogen. The group other than hydrogen in R10〇3, R10〇4, R105, Rl〇6, Ri〇7, R108, R1〇9 and R110 in the above formula (5) represents a group represented by the following formula (6). The eight groups of R103, Rl〇4, R105, R106, Rl〇7, R108, R109 and R11〇 may all be hydrogen. One or two of the eight groups of R103, R104, R105, R106, R107, Rl〇8, Rl〇9 and R110 are groups represented by the following formula (6), and R1〇3, R104, R105, Among the R1〇6, R107, R108, R109 and R11〇, the group which is not a group represented by the following formula (6) may be hydrogen. [Chemical 6]

式⑹ 上述式(6)中,R111表示碳數1〜5之伸烷基。 I50398.doc •17· 201129273 [化7]In the above formula (6), R111 represents an alkylene group having 1 to 5 carbon atoms. I50398.doc •17· 201129273 [Chem. 7]

…式⑺ R1及R2分別表示碳數卜5之伸烷基。 上述式(7)中 [化8]Formula (7) R1 and R2 each represent an alkylene group of a carbon number. In the above formula (7) [Chemical 8]

上述式W中’R3及R4表示碳數卜5之伸烷基。 …式(8) 具有上述式⑴或(2)所示之結構之環硫化合物具有至少2 個環硫乙基(環硫基)。又,具有環硫乙基之基鍵結於苯環 或萘環。由於具有此種結構’故藉由對異向性導電材料進 行加熱,可於低溫下使異向性導電材料迅速硬化。再者, 本說明書中,所謂低溫,係指2〇(rc以下之溫度。 具有上述式⑴、(2)、(5)、⑺或(8)所示之結構之環硫化 合物與上述式⑴、(2)、(5)、⑺或⑻中之環硫乙基為環氧 基之化合物相tb,反應性較高。其原因在於環硫乙基較環 氧基更易開環’而反應性較高。由於且有 ⑺、⑸、⑺或⑻所示之結構之環硫化合物之較 高,故可於低溫下使異向性導電材料迅速硬化。特別是= 150398.doc -18- 201129273 有上述式(1)或(2)所示之結構之環硫化合物之反應性相當 南’故可於低溫下使異向性導電材料迅速硬化。 上述式(I)中之R1及R2、上述式(2)中之R51及R52、上述 式(3)中之R7、以及上述式(4)中之r59、上述式中之 R101及R102、上述式(6)中之Rill、上述式(7)中之尺丨及 R2、上述式(8)中之R3及R4為碳數1〜5之伸炫基。若該伸院 基之奴數超過5,則存在上述環硫化合物之硬化速度變慢 之傾向。 上述式(1)中之R1及R2、上述式(2)中之R51及R52、上述 式(3)中之R7、以及上述式(4)中之R59、上述式(5)中之 R101及R102、上述式(6)中之Rni、上述式(?)中之ri及 R2、上述式(8)中之R3及R4分別較好的是碳數丨〜3之伸烷 基,更好的是亞曱基。上述伸烷基可為具有直鏈結構之伸 烧基’亦可為具有分支結構之伸烷基。 上述(1)所示之結構較好的是下述式(1A)所示之結構。具 有下述式(1A)所示之結構之環硫化合物之硬化性優異。 [化9]In the above formula W, 'R3 and R4 represent an alkylene group of carbon number. The episulfide compound having the structure represented by the above formula (1) or (2) has at least 2 cyclic thioethyl groups (cyclothio groups). Further, a group having an episulfide group is bonded to a benzene ring or a naphthalene ring. By having such a structure, the anisotropic conductive material can be rapidly hardened at a low temperature by heating the anisotropic conductive material. In the present specification, the term "low temperature" means 2 〇 (temperature below rc. The episulfide compound having the structure represented by the above formula (1), (2), (5), (7) or (8) and the above formula (1) The compound phase tb in which the epoxide thioethyl group in (2), (5), (7) or (8) is an epoxy group has high reactivity. The reason is that the epoxide group is more susceptible to ring opening than the epoxy group and the reactivity is It is higher. Because of the higher content of the episulfide compound of the structure shown in (7), (5), (7) or (8), the anisotropic conductive material can be hardened rapidly at a low temperature. Especially = 150398.doc -18- 201129273 The reactivity of the episulfide compound of the structure represented by the above formula (1) or (2) is relatively south, so that the anisotropic conductive material can be rapidly hardened at a low temperature. R1 and R2 in the above formula (I) (2) R51 and R52, R7 in the above formula (3), r59 in the above formula (4), R101 and R102 in the above formula, Rill in the above formula (6), and the above formula (7) R2 and R4 in the above formula (8) are extensible groups having a carbon number of 1 to 5. If the number of slaves of the extended base exceeds 5, the hardening of the above-mentioned episulfide compound exists. The tendency of the degree is slow. R1 and R2 in the above formula (1), R51 and R52 in the above formula (2), R7 in the above formula (3), and R59 in the above formula (4), and the above formula ( 5) R101 and R102, Rni in the above formula (6), ri and R2 in the above formula (?), and R3 and R4 in the above formula (8) are preferably carbon numbers 丨~3. The alkyl group is more preferably an anthracenylene group. The above alkyl group may be a stretching group having a linear structure or an alkyl group having a branched structure. The structure shown in the above (1) is preferably lower. The structure represented by the formula (1A) is excellent in the hardenability of the episulfide compound having the structure represented by the following formula (1A).

…式(1A) 上述式(1A)中,R1&R2分別表示碳數卜5之伸烷基。 上述式(1)所示之結構更好的是下述式(1B)所示之結構。具 有下述式(1B)所示之結構之環硫化合物之硬化性更優異。 150398.doc •19- 201129273 [化 ίο]Formula (1A) In the above formula (1A), R1 & R2 each represents an alkylene group of a carbon number. The structure represented by the above formula (1) is more preferably a structure represented by the following formula (1B). The episulfide compound having a structure represented by the following formula (1B) is more excellent in hardenability. 150398.doc •19- 201129273 [化 ίο]

…式(IB) 上述(2)所示之結構較好的是下述式(2A)所示之結構。具 有下述式(2A)所示之結構之環硫化合物之硬化性優異。 [化 11] R51. Ό S' s ...式(2A) 上述式(2A)中,R51及R52分別表示碳數1〜5之伸烷基。 上述式(2)所示之結構更好的是下述式(2B)所示之結構。 具有下述式(2B)所示之結構之環硫化合物之硬化性更優異。 [化 12]Formula (IB) The structure represented by the above (2) is preferably a structure represented by the following formula (2A). The episulfide compound having the structure represented by the following formula (2A) is excellent in hardenability. R51. Ό S' s (2A) In the above formula (2A), R51 and R52 each represent an alkylene group having 1 to 5 carbon atoms. The structure represented by the above formula (2) is more preferably a structure represented by the following formula (2B). The episulfide compound having a structure represented by the following formula (2B) is more excellent in hardenability. [化 12]

ΟΟ

···式(2B) 150398.doc •20- 201129273 上述環氧化合物並無特別限定 用先前公知之環氧化合物。上述卜、%氧化合物,可使 種,亦可併用2種以上。 L衣氧化合物可僅使用1 作為上述環氧化合物,可列舉: " 脂、雙酴F型環氧樹脂、雙㈣型環氧樹/t基之苯氧樹 型環氧樹脂、聯苯齡型環氧樹腊、蔡型^本粉㈣清漆 氧樹脂、苯紛芳燒基型環氧樹脂、華:芳了::第型環 脂、二環戊二婦型環氧樹脂 ^型核氧樹 骨架之環氧樹脂、具有三環癸貌骨=树月曰、具有金剛燒 中具有二井核之環氧樹脂等。 汆 作為上述環氧化合物之具體 盥雙酚Α剞产ϋ #+ D 11列舉:由表氯醇(2B) 150398.doc • 20-201129273 The above epoxy compound is not particularly limited to the conventionally known epoxy compound. The above-mentioned materials and the % oxygen compound may be used in combination of two or more kinds. The L-oxyl compound may be used alone as the above epoxy compound, and examples thereof include: "fat, biguanide F type epoxy resin, bis(tetra) type epoxy tree/t base phenoxy resin, biphenyl age Epoxy wax, Cai type ^ this powder (four) varnish oxyresin, benzene aryl burning epoxy resin, Hua: Fang:: type of ring grease, dicyclopentadiene epoxy resin type nucleus oxygen The epoxy resin of the tree skeleton, the tricyclic enamel bone = tree sap, and the epoxy resin having the two well core in the radiant burning.汆 Specific as the above epoxy compound 盥 bisphenol hydrazine ϋ #+ D 11 List: by epichlorohydrin

/、又酚Ai ί衣氧树知、雙酚F 脂#所H ^ 衣乳树月曰或雙紛D型環氧樹 知寻所何生而成之雙酚型環氧樹脂,以丄 胁聪、主寸十麻 及由表乳醇與苯紛 Γ:漆或f㈣嶋所衍生而成之環氧_清漆樹 月曰。亦可使用縮水甘油⑯、缩水 :式專在u子内具有2個以上之環氧乙基之各種環氧化合 上述硬化性化合物亦可含有具有將上述式⑴、⑺ ⑺、⑺或⑻所示之結構中之環硫乙基取代成環氧基之处 構的環氧化合物。於此情形時,上述式⑺、⑷及⑹戶^ 之結構亦較好的是將環硫乙基取代成環氧基之結構。上述 硬化性化合物亦可含有下述式⑴)或(12)所示之環氧化: 物。上述硬化性化合物較好的是含有上述式⑴或⑺所: 之環硫化合物與下述式⑴)或(12)料之環氧化合物。 150398.doc 201129273 R13 Ο [化 13]/, phenol Ai ί clothing oxygen tree know, bisphenol F fat #H ^ 乳乳树月曰 or double D-type epoxy tree knows what to create bisphenol type epoxy resin, Cong, the main inch of ten hemp and the epoxy _ lacquer tree moon 衍生 derived from the surface of the milk and benzene: paint or f (four) 曰. It is also possible to use glycidol 16 and shrinkage: various epoxidized compounds having two or more epoxy groups in the u group, and the curable compound may also have a formula represented by the above formula (1), (7), (7), (7) or (8). An epoxy compound in which the thioethyl group in the structure is substituted with an epoxy group. In this case, the structures of the above formulas (7), (4) and (6) are also preferably a structure in which an epoxy group is substituted with an epoxy group. The above curable compound may also contain an epoxidized product represented by the following formula (1)) or (12). The curable compound is preferably an epoxy compound containing an episulfide compound of the above formula (1) or (7) and a compound of the following formula (1)) or (12). 150398.doc 201129273 R13 Ο [Chem. 13]

R11R11

R16 0, R12R16 0, R12

Ο …式(11) 上述式(11)中,R11及R12分別表示碳數1〜5之伸烧基, R13、R14、R15及R16之4個基中2~4個基表示氫,Ru、 R14、R15及R16中並非氫之基表示下述式(13)所示之基。 上述式(11)中之R13、R14、R15及R16之4個基可全部為 氫。R13、R14、R15及R16之4個基中1個或2個為下述式 (13)所示之基’且R13、R14、R15及以6之4個基中並非下 述式(13)所示之基的基為氫亦可。 [化 14] ...式(13) 上述式(13)中,R〗7表示碳數之伸烧基。 [化 15]In the above formula (11), R11 and R12 each represent a stretching group having a carbon number of 1 to 5, and 2 to 4 of the four groups of R13, R14, R15 and R16 represent hydrogen, Ru, The group other than hydrogen in R14, R15 and R16 represents a group represented by the following formula (13). The four groups of R13, R14, R15 and R16 in the above formula (11) may all be hydrogen. One or two of the four groups of R13, R14, R15 and R16 are a group ' represented by the following formula (13) and R13, R14, R15 and the four groups of 6 are not the following formula (13) The group of the group shown may be hydrogen. In the above formula (13), R 7 represents a carbon-based stretching group. [化15]

...式(12) 150398.doc 201129273 上述式(12)中,R61及R62分別表示碳數1〜5之伸烷基, R63 ' R64、R65、R66、R67及R68之6個基中4〜6個基表示 氫,R63、R64、R65、R66、R67及R68中並非氫之基表示 下述式(14)所示之基。 上述式(12)中之 R63、R64、R65、R66、R67 及 R68 之 6個 基可全部為氫。R63、R64、R65、R66、R67及R68之6個 基中1個或2個為下述式(14)所示之基,且R63、R64、 R65、R66、R67及R68之6個基中並非下述式(14)所示之基 的基為鐵1亦可。 [化 16] /〇、邮9^ ."式(14) 上述式(14)中’ R69表示碳數1〜5之伸烷基。 上述式(11)中之R11及R12、上述式(12)中之R61及R62、 上述式(13)中之R17、以及上述式(14)中之R69為碳數1〜5 之伸烷基。若該伸烷基之碳數超過5,則上述式(1 ^或丨以) 所示之環氧化合物之硬化速度容易變慢。 上述式(11)中之R11及R12、上述式(12)中之R_61及R62、 上述式(13)中之R17、以及上述式(14)中之R69分別較好的 疋碳數1〜3之伸&基’ t好的是亞曱《。上述伸烧基可為 具有直鏈結構之伸烷基’亦可為具有分支結構之伸烷基。 上述(11)所示之結構較好的是下述式(11A)所示之結構。 具有下述式(11A)所示之結構之環氧化合物於市場上有 售,可容易地獲得。 150398.doc •23· 201129273 [化 17]Formula (12) 150398.doc 201129273 In the above formula (12), R61 and R62 each represent an alkylene group having 1 to 5 carbon atoms, and 6 of 6 groups of R63 'R64, R65, R66, R67 and R68 ~6 groups represent hydrogen, and a group other than hydrogen among R63, R64, R65, R66, R67 and R68 represents a group represented by the following formula (14). The six groups of R63, R64, R65, R66, R67 and R68 in the above formula (12) may all be hydrogen. One or two of the six groups of R63, R64, R65, R66, R67 and R68 are a group represented by the following formula (14), and six groups of R63, R64, R65, R66, R67 and R68 are The group which is not a group represented by the following formula (14) may be iron 1. [Chemical Formula 16] / 〇, mail 9^ . " Formula (14) In the above formula (14), 'R69 represents an alkylene group having 1 to 5 carbon atoms. R11 and R12 in the above formula (11), R61 and R62 in the above formula (12), R17 in the above formula (13), and R69 in the above formula (14) are alkylene groups having a carbon number of 1 to 5 . When the carbon number of the alkylene group exceeds 5, the curing rate of the epoxy compound represented by the above formula (1^ or oxime) tends to be slow. R11 and R12 in the above formula (11), R_61 and R62 in the above formula (12), R17 in the above formula (13), and R69 in the above formula (14) are each preferably a carbon number of 1 to 3 The extension & base is good for Aachen. The above-mentioned stretching group may be an alkylene group having a linear structure or an alkylene group having a branched structure. The structure shown in the above (11) is preferably a structure represented by the following formula (11A). An epoxy compound having a structure represented by the following formula (11A) is commercially available and can be easily obtained. 150398.doc •23· 201129273 [Chem. 17]

...式(11A) 上述式(11A)中,R11及R12分別表示碳數1〜5之伸烷基〇 上述式(11)所示之結構更好的是下述式(11B)所示之結 構。具有下述式(11B)所示之結構之環氧化合物為間苯二 酚二縮水甘油醚。間苯二酚二縮水甘油醚於市場上有售, 可容易地獲得。 [化 18]In the above formula (11A), R11 and R12 each represent an alkylene group having 1 to 5 carbon atoms, and the structure represented by the above formula (11) is more preferably represented by the following formula (11B). The structure. The epoxy compound having a structure represented by the following formula (11B) is resorcinol diglycidyl ether. Resorcinol diglycidyl ether is commercially available and is readily available. [Chem. 18]

...式(11B) 上述式U2)所示之結構較好的是下述式(i2A)所示之 構。具有下述式(12A)所示之結構之炉e 獲得。 又长氧化合物可容易 [化 19]Formula (11B) The structure represented by the above formula U2) is preferably a structure represented by the following formula (i2A). Furnace e having the structure shown by the following formula (12A) was obtained. And long-oxygen compounds can be easily [Chem. 19]

.·.式(12A) 150398.doc • 24 - 201129273 上述式(12A)中R61及R62分別表示碳數卜5之伸统基。 上述式⑽所示之結構更好為下述式(i2B)所示之結構。 具有下述式(12B)所不之結構之環氧化合物可容易地獲. . . Formula (12A) 150398.doc • 24 - 201129273 In the above formula (12A), R61 and R62 respectively represent the extension of the carbon number. The structure represented by the above formula (10) is more preferably a structure represented by the following formula (i2B). An epoxy compound having a structure of the following formula (12B) can be easily obtained

.·.式(12B) 具有上述式(1)或(2)所示之結構之環硫化合物與上述式 (11)或(12)所不之環氧化合物之混合物(以下,有時省略記 作混合物A)之合計1〇〇重量%中,較好的是具有上述式 或(2)所示之結構之環硫化合物之含量為1〇〜5〇重量%,且 上述式(11)或(12)所示之環氧化合物之含量為〜%重量 %,更好為具有上述式(1)或(2)所示之結構之環硫化合物之 3里為20〜3 0重置%,且上述式(η)或(12)所示之環氧化合 物之含量為80〜70重量%。 若具有上述式(1)或(2)所示之結構之環硫化合物之含量 過少’則存在上述混合物A之硬化速度變慢之傾向。若具 有上述式(1)或(2)所示之結構之環硫化合物之含量過多, 則有上述混合物A之黏度變得過高’或上述混合物A變成 固體之情形。 上述混合物A之製造方法並無特別限定。作為該製造方 150398.doc •25- 201129273 法,例如可列舉準備上述式(11)或 物,將兮措《 | 丁之化氧化合 將邊環氧化合物之一部分環氧基轉變為 造方法。 ,,·己基之製 上述混合物A之製造方法較好的是於含有硫化劑之 =中連續地或間斷地添加上述式⑴)或(12)所示之環氧: 合物或含有該環氧化合物之溶液後,進而連續地或:斷^ 添t含有硫化劑之第2溶液的方法。#由該方法,可將上 述環氧化合物之一部分環氧基轉變為環硫乙基。其結果, 可獲得上述混合物A。作為上述硫化劑,可列舉硫氛酸鹽 類、硫脲類、硫化膦、二尹基硫代▼醯胺及基苯并噻 硫酮等。作為上述硫氰酸鹽類,可列舉硫氛酸納、硫 I酸鉀及硫氰酸鈉等。 瓜 上述硬化性化合物亦可含有具有下述式(21)所示之結構 之環氧化合物之單體、至少2個該環氧化合物鍵結而成之 多聚物、或該單體與該多聚物之混合物。 [化 21](12B) A mixture of an episulfide compound having a structure represented by the above formula (1) or (2) and an epoxy compound not represented by the above formula (11) or (12) (hereinafter, sometimes omitted It is preferable that the content of the episulfide compound having the structure represented by the above formula or (2) is 1 〇 to 5 〇 by weight, and the above formula (11) or The content of the epoxy compound shown in (12) is 8% by weight, more preferably the epoxide compound having the structure represented by the above formula (1) or (2) is 20 to 30% by weight, Further, the content of the epoxy compound represented by the above formula (η) or (12) is from 80 to 70% by weight. If the content of the episulfide compound having the structure represented by the above formula (1) or (2) is too small, the curing rate of the above mixture A tends to be slow. If the content of the episulfide compound having the structure represented by the above formula (1) or (2) is too large, the viscosity of the above mixture A becomes too high' or the above-mentioned mixture A becomes a solid. The method for producing the above mixture A is not particularly limited. For example, the method of the above-mentioned formula (11) or the preparation of the above-mentioned formula (11), and the oxidation of a part of the epoxy group of the side epoxy compound can be exemplified. The production method of the above mixture A is preferably carried out by continuously or intermittently adding the epoxy compound represented by the above formula (1)) or (12) to or containing the vulcanizing agent. After the solution of the compound, the method of adding the second solution containing the vulcanizing agent is continuously or intermittently added. # By this method, a part of the epoxy group of the above epoxy compound can be converted into an episulfide group. As a result, the above mixture A can be obtained. Examples of the vulcanizing agent include sulphuric acid salts, thioureas, phosphine sulfide, diinylthio phthalamide, and benzothiothione. Examples of the thiocyanate include sodium thionate, potassium thioate, and sodium thiocyanate. The curable compound of the melon may further contain a monomer having an epoxy compound having a structure represented by the following formula (21), a polymer obtained by bonding at least two of the epoxy compounds, or the monomer and the monomer. a mixture of polymers. [Chem. 21]

上述式(21)中,R1表示碳數1〜5之伸烷基,尺2表示碳數 1〜5之伸烷基,R3表示氫原子 '碳數卜5之烷基或下述式 (22)所示之結構,R4表示氫原子、碳數工〜5之烧基或下述 I50398.doc -26 - 201129273 式(23)所示之結構。 [化 22]In the above formula (21), R1 represents an alkylene group having 1 to 5 carbon atoms, 2 represents an alkylene group having 1 to 5 carbon atoms, and R3 represents an alkyl group having a hydrogen atom of 'carbon number 5' or the following formula (22) In the structure shown, R4 represents a hydrogen atom, a carbon number of ~5, or a structure represented by the following formula (23) of I50398.doc -26 - 201129273. [化22]

…式(22) 上述式(22)中,R5表示碳數1〜5之伸烷基。 [化 23]In the above formula (22), R5 represents an alkylene group having 1 to 5 carbon atoms. [Chem. 23]

…式(23) 上述式(23)中,R6表示碳數1〜5之伸烷基。 具有上述式(2”所示之結構之環氧化合物之特徵在於且 有不飽和雙鍵與至少2個環氧基。藉由使用具有上述式 所示之結構之環氧化合物,可於低溫下使異向性導 〇 迅速硬化。 材料 上述硬化性化合物亦可含有具有下述式⑼所 士 '''〇 之化合物之單體m個該化合物鍵結而成之多聚物' 或該單體與該多聚物之混合物。 ' 150398.doc -27- 201129273 [化 24]In the above formula (23), R6 represents an alkylene group having 1 to 5 carbon atoms. The epoxy compound having the structure represented by the above formula (2) is characterized by having an unsaturated double bond and at least two epoxy groups. By using an epoxy compound having a structure represented by the above formula, it can be used at a low temperature. The anisotropic guide is rapidly hardened. The above-mentioned curable compound may further contain a monomer having a compound of the following formula (9), and a polymer obtained by bonding the compound or a monomer. Mixture with the polymer. ' 150398.doc -27- 201129273 [Chem. 24]

3 -X1 •X2 ...式(31) 上述式(31)中,R1表示氫原子或碳數1〜5之烷基或者下 述式(32)所示之結構,R2表示碳數1〜5之伸烷基,R3表示 碳數1〜5之伸烷基,XI表示氧原子或硫原子,X2表示氧原 子或硫原子。 [化 25] -X3 R4 ·.·式(32) 上述式(32)中,R4表示碳數1〜5之伸烷基,Χ3表示氧原 子或硫原子。 相當於具有上述式(3 1)所示之結構之化合物之環氧化合 I50398.doc -28- 201129273 物例如能以如下方式合成。 混合作為原料化合物之具有經基之葬化合物、表氣醇、 氫氧錢、甲si,進行冷卻使其反應H滴加氮氧化 鈉水岭液。於滴加後,進而使其反應,獲得反應液。其 次,於反應液中添加水及甲笨,取出甲苯層。以水清洗甲 苯層後,進行乾燥,去除水及溶劑。#此,可容易地獲得 相田於’、有上述式(3 ”所不之結構之化合物之環氧化合 物。再者’作為原料化合物之具有經基之Μ合物例如係 由JFE Chemical公司等市售。 又’相當於具有上述式(31)所示之結構之化合物的含環 :乙基之化合物可藉由將相當於具有上述式⑻所示之J =合物之環氧化合物的環氧基轉變為環硫乙基而合 物之於含有上述硫化劑之溶液中添加作為原料化合 含有上 含有該環氧化合物之溶液後,進而添加 硫化劑之溶液,藉此可容易地將環氧基轉變為環 m性化合物亦可含有具 化合物。上述具有含氮原子之雜環之之環氧 下述式(41)所干之产4 <虱化。物較好的是 所不之化合物、或下 化合物。藉由使用此種硬化性化合斤不之環氧 性導電材料之硬化速度,且牛 進—步加快異向 硬化物之耐熱性。且進-步提高異向性導電材料之 I50398.doc •29· 201129273 [化 26]3 - X1 • X2 (31) In the above formula (31), R1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms or a structure represented by the following formula (32), and R2 represents a carbon number of 1 to 2 5 is an alkylene group, R3 represents an alkylene group having 1 to 5 carbon atoms, XI represents an oxygen atom or a sulfur atom, and X2 represents an oxygen atom or a sulfur atom. -X3 R4 In the above formula (32), R4 represents an alkylene group having 1 to 5 carbon atoms, and Χ3 represents an oxygen atom or a sulfur atom. The epoxidized group I50398.doc -28-201129273 which is equivalent to the compound having the structure represented by the above formula (31) can be synthesized, for example, in the following manner. The raw material compound is mixed with a burial compound, epigas alcohol, oxyhydrogen, and a Si, and is cooled to react H dropwise with a sodium oxynitride solution. After the dropwise addition, the reaction was further carried out to obtain a reaction liquid. Next, water and a stupid were added to the reaction liquid, and the toluene layer was taken out. After washing the toluene layer with water, it is dried to remove water and solvent. #此, It is easy to obtain an epoxy compound of a compound having a structure of the above formula (3). Further, as a raw material compound, a compound having a warp group is, for example, a city such as JFE Chemical Co., Ltd. Further, a compound containing a ring:ethyl group corresponding to a compound having a structure represented by the above formula (31) can be obtained by an epoxy resin equivalent to an epoxy compound having a J = compound represented by the above formula (8). The base is converted into a cyclothioethyl group, and a solution containing the epoxy compound is added as a raw material in a solution containing the above-mentioned vulcanizing agent, and then a solution of a vulcanizing agent is further added, whereby the epoxy group can be easily added. The compound which is converted into a ring m compound may also contain a compound. The above epoxy compound having a hetero ring containing a nitrogen atom is produced by the following formula (41), and is preferably a compound which is not a compound. Or the lower compound. By using the hardening rate of the hardenable epoxy conductive material, and the stepwise acceleration of the heat resistance of the anisotropic hardened material, and further improving the I50398 of the anisotropic conductive material .doc •29· 201129273 [ 26]

…式(41) ο...(41) ο

上述式(41)中,R1〜R3分別表示碳數1〜5之伸烧基,乙表 示環氡基或羥曱基。R21〜R23可相同,亦可不同。 [化 27] Λ R4 0 — R1. 0In the above formula (41), R1 to R3 each represent a stretching group having a carbon number of 1 to 5, and B represents a cyclodecyl group or a hydroxy group. R21 to R23 may be the same or different. [化27] Λ R4 0 — R1. 0

DD

0 Ν- 0- •R30 Ν- 0- • R3

A R6 R2' ΝA R6 R2' Ν

Ο 0- R5 q 上述式(42)中’ Rl〜R3分別表示碳數Μ之伸烧基,p、q h分別表示1〜5之整數’ R4,分別表示碳數卜5之伸烷 基。R1〜R3可相同,亦可不 J不网。p、q及r可相同,亦可不 同。R4〜R6可相同,亦可不同。 上述具有含氣原子之雜擇+ 衣之%氧化合物較好的是三縮水 I50398.doc •30- 201129273 甘油基異氰尿酸SI、或三經基乙基異氰尿酸酷三縮水甘油 鱗。藉由使用該等硬化性化合物,可進-步加快異向性導 電材料之硬化速度。 導 上述硬化性化合物較好的是含有具有芳香環之環氧化合 物藉由使用具有芳香環之環氧化合物,可進_步加快異 =|生導$材料之硬化速度’且容易塗佈異向性導電材料。 , v提间異向性導電材料之塗佈性之觀點而言,上述 芳香環較好的是苯環、萘環或蒽環。作為具有上述芳香環 =環氧化合物’可列舉間苯二酚二縮水甘油醚或Μ•萘二 縮水甘油醚。其中,女、似L Α ^ 尤好為具有上述式(11Β)所示之結構 之間苯二酚二縮水甘油醚。藉由使用間苯二酚二縮水甘油 趟’可加快異向性導電材料之硬化速度,且容易塗佈異向 性導電材料。 [光硬化性化合物] 本發明之硬化性化合物亦可含有光硬化性化合物,以藉 由光之照射而硬化。可藉由照射光而使硬化性化合物半硬 化,降低硬化性化合物之流動性。 ^述光硬化性化合物並無特別限定,可列舉(甲基)丙烯 酸系樹脂及含環狀醚基之樹脂等。 作為上述(甲基)丙烯酸系樹脂,例如可合適地使用使(甲 基)丙稀酸與具有錄之化合物反應所得之_化合物、使 (b甲基)丙稀酸與環氧化合物反應所得之環氧(甲基)丙稀酸 ,、使異氰酸S旨與具有經基之(甲基)丙締酸衍生物反應所 得之(甲基)丙烯酸胺基甲酸酯等。 150398.doc 201129273 於含有除上述光硬化性化合物以外之光硬化性化合物之 情形時,該光硬化性化合物可為交聯性化合物,亦可為非 交聯性化合物》 作為上述交聯性化合物之具體例,例如可列舉:1,4_ 丁 二醇二(曱基)丙稀酸酯、1,6-己二醇二(甲基)丙稀酸酯、 1,9-壬二醇二(曱基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸 酯、(聚)丙二醇二(曱基)丙烯酸酯、新戊二醇二(甲基)丙烯 酸酯、季戊四醇二(曱基)丙烯酸酯、甘油甲基丙烯酸醋丙 烯酸酯、季戊四醇三(曱基)丙烯酸酯、三羥曱基丙烷三曱 基丙烯酸酯、(甲基)丙烯酸烯丙酯、(曱基)丙烯酸乙稀 醋、二乙稀基苯、聚酯(甲基)丙稀酸酯、及(甲基)丙稀酸 胺基曱酸酯等。 作為上述非交聯性化合物之具體例,可列舉:(曱基)丙 烯酸乙酯、(曱基)丙烯酸正丙酯、(甲基)丙烯酸異丙醋、 (甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸 第三丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(曱基) 丙烯酸庚酯、(甲基)丙烯酸_2_乙基己酯、(甲基)丙烯酸正 辛酯、(甲基)丙烯酸異辛酯、(曱基)丙烯酸壬醋、(曱基)丙 烯酸癸酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二 烷基酯、(甲基)丙烯酸十三烷基酯及(甲基)丙烯酸十四烷 基酯等。 [光及熱硬化性化合物] 於上述硬化性化合物含有例如熱硬化性化合物及光聚合 性化合物之情形時’就容易控制異向性導電材料之硬化、 I50398.doc •32· 201129273 或進一步提高連接構造體之導通可靠性之觀點而言,上述 硬化性化合物較好的是含有具有環氧基及環硫乙基中之至 少一種基與(甲基)丙烯醯基之光及熱硬化性化合物。上述 硬化性化合物較好的是含有具有環氧基與(甲基)丙烯醯基 之光及熱硬化性化合物(以下,亦稱為部分(甲基)丙稀酸醋 化環氧樹脂)。上述(甲基)丙烯酸醋係指丙烯酸酿或曱基丙 烯酸酯。 上述部分(甲基)丙烯酸酯化環氧樹脂例如係藉由依據常 法使環氧樹脂與(甲基)丙烯酸於鹼性觸媒之存在下反應而 獲得。較好的是將環氧基之㈣以上轉變為(甲基)丙稀酿 基(轉化率),而經部分(甲基)丙烯酸化。更好為將環氧基 之50%轉變為(甲基)丙烯醯基。 就提高異向性導電材料之硬化性之觀點而言,上述硬化 性化合物刚重量%中’上述部分(甲基)丙埽酸醋化環氧樹 脂之含量之較好下限為ο」重量%,更好下限為〇·5重量%, 較好上限為2重量%,更好上限為丨5重量%。 作為上述環氧(甲基)丙稀酸醋,可列舉雙紛型環氧(甲 基)丙稀酸醋、f紛㈣清漆型環氧(甲基)丙烯酸醋、叛酸 酐改質環氧(甲基)丙烯酸醋、及苯酚酚醛 基)丙烯酸酯等。 乳(甲 (熱硬化劑) 上述熱硬化劑並無特別限定。作為上述熱硬化劑,可使 用先前公知之熱硬化劑。作為上述熱硬化劑,可列舉㈣ 硬化劑、胺硬化劑、胁$ A丨、4硫醇硬化劑及酸野等。 l5039S.doc •33· 201129273 上述熱硬化劑可僅使用1種,亦可併用2種以上。 上述熱硬化劑較好的是咪唑硬化劑、聚硫醇硬化劑或胺 硬化劑,其原因在於可於低溫下使異向性導電材料更迅速 地硬化。又,較好的是潛伏性之硬化劑,其原因在於可提 高異向性導電材料之保存穩定性。該潛伏性之硬化劑較好 的是潛伏性咪唑硬化劑、潛伏性聚硫醇硬化劑或潛伏性胺 硬化劑。上述熱硬化劑亦可由聚胺基曱酸酯樹脂或聚酯樹 脂等高分子物質所包覆。 作為上述咪唑硬化劑,並無特別限定,可列舉2_曱基咪 唑、2-乙基-4·曱基咪唑、卜氰乙基_2_苯基咪唑、卜氰乙 基-2-苯基咪唑鑌偏苯三甲酸鹽、2,4_二胺基·6_[2|_甲基咪 唑基·(1,)]_乙基-均三_及2,4_二胺基_6 [2,甲基味唑基_ (I1)]-乙基-均三畊異三聚氰酸加成物等。 作為上述聚硫醇硬化劑,並無特別限定,可列舉三羥甲 基丙烷三-3,基丙酸醋、季戊四醇四_3,基丙酸醋及二 季戊四醇六巯基丙酸酯等。 作為上述胺硬化劑,並無特別限定,可列舉六亞尹基二 胺、八亞甲基二胺、十亞甲基二胺、3,9_雙(3_胺基丙土朴 2,4,8,10-四螺[5.5]十一燒、雙(4,基環己基)甲炫、間苯 二胺及二胺基二苯基砜等。 上述熱硬化劑之含量並盔转刖〜.^, …将別限疋。相對於上述硬化性 化合物之合計1 00重詈份,!_·+· Μ Λ 里里切,上述熱硬化劑之含量之較好下 限為5重量份,更好下I:艮或】Λ壬_ θ 文灯卜隈為10重量份,較好上限為3〇重量 (分,更好上限為20重量份。次:u β上£ f 右上述熱硬化劑之含量滿足上 150398.doc -34· 201129273 述較好下限及上限,則可使異向性導電材料充分地熱硬 化° (光硬化起始劑) 上述光硬化起始劑並無特別限定。作為上述光硬化起始 劑,可使用先前公知之光硬化起始劑。上述光硬化起始劑 可僅使用1種,亦可併用2種以上。 作為上述光硬化起始劑,並無特別限定,可列舉笨乙酮 光硬化起始劑、二笨甲鲷光硬化起始劑、9_氧硫叫、縮 綱光硬化起始劑、鹵化_、醯基氧化膦及酿基填酸醋等。 作為上述苯乙酮光硬化起始劑之具體例,可列舉4_(2·羥 基乙氧基)苯基(2-超基丙基)酮、2_經基_2_曱基]-笨基 丙-1-酮、甲氧基苯乙酮、2,2•二甲氧基·苯基乙_= 鲷、及2-經基-2_環己基苯乙_等。作為上述縮嗣光硬化起 始劑之具體例’可列舉苯偶醯二甲基縮酮等。 上述光硬化起始劑之含量並無特別限^。相對於上述硬 化性化合物之合計100重量份,上述光硬化起始劑之含量 之較好下限為0.1重量份,更好下限為〇 2重量份,較好上 限為2重量份’更好上限為1重量份。若上述光硬化起始劑 之含量滿足上述較好下限及上限,則可使異向性導電材料Ο 0- R5 q In the above formula (42), 'R1 to R3 respectively represent a carbon number 伸 extension group, and p and qh each represent an integer 'R4 of 1 to 5', respectively, and represent a carbon number of the alkyl group. R1 to R3 may be the same or not. p, q and r may be the same or different. R4 to R6 may be the same or different. The above oxygen compound having a gas-containing heteroselective + clothing is preferably a triple-shrinkage I50398.doc • 30-201129273 glyceryl isocyanuric acid SI, or tris-ethylethyl isocyanuric acid triglycidyl scale. By using these hardening compounds, the hardening speed of the anisotropic conductive material can be further accelerated. It is preferred that the above-mentioned curable compound contains an epoxy compound having an aromatic ring, and by using an epoxy compound having an aromatic ring, the rate of hardening of the material can be accelerated and the coating is easily applied. Conductive material. From the viewpoint of the coatability of the anisotropic conductive material, the above aromatic ring is preferably a benzene ring, a naphthalene ring or an anthracene ring. The above-mentioned aromatic ring = epoxy compound' may, for example, be resorcinol diglycidyl ether or hydrazine naphthalene diglycidyl ether. Among them, the female, like L Α ^ is particularly preferably a structure having the structure represented by the above formula (11Β), which is a hydroquinone diglycidyl ether. By using resorcinol diglycidyl hydrazine ′, the rate of hardening of the anisotropic conductive material can be accelerated, and the anisotropic conductive material can be easily applied. [Photocurable compound] The curable compound of the present invention may further contain a photocurable compound to be cured by irradiation with light. The curable compound can be semi-hardened by irradiation of light to lower the fluidity of the curable compound. The photocurable compound is not particularly limited, and examples thereof include a (meth)acrylic resin and a cyclic ether group-containing resin. As the (meth)acrylic resin, for example, a compound obtained by reacting (meth)acrylic acid with a compound having a recording compound, and reacting (b-methyl)acrylic acid with an epoxy compound can be suitably used. Epoxy (meth)acrylic acid, and (meth)acrylic acid urethane obtained by reacting isocyanate S with a trans (meth)propionic acid derivative. 150398.doc 201129273 In the case of containing a photocurable compound other than the photocurable compound, the photocurable compound may be a crosslinkable compound or a non-crosslinkable compound" as the crosslinkable compound. Specific examples include, for example, 1,4-butanediol bis(indenyl) acrylate, 1,6-hexanediol di(meth) acrylate, and 1,9-nonanediol bis (曱). Acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol bis(indenyl)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol di(decyl)acrylic acid Ester, glycerol methacrylate acrylate, pentaerythritol tris(decyl) acrylate, trishydroxypropyl propane tridecyl acrylate, allyl (meth) acrylate, ethylene (meth) acrylate, diethyl A thin benzene, a polyester (meth) acrylate, and a (meth) acryl amide phthalate. Specific examples of the non-crosslinkable compound include ethyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl methacrylate, and n-butyl (meth) acrylate. Isobutyl methacrylate, tert-butyl (meth) acrylate, amyl (meth) acrylate, hexyl (meth) acrylate, (heptyl) heptyl acrylate, (meth) acrylate_2 Ethylhexyl ester, n-octyl (meth)acrylate, isooctyl (meth)acrylate, decyl acrylate (decyl) decyl acrylate, undecyl (meth) acrylate, Dodecyl (meth)acrylate, tridecyl (meth)acrylate, and tetradecyl (meth)acrylate. [Light and thermosetting compound] When the curable compound contains, for example, a thermosetting compound and a photopolymerizable compound, it is easy to control the hardening of the anisotropic conductive material, I50398.doc •32·201129273 or further improve the connection. From the viewpoint of the conduction reliability of the structure, the curable compound preferably contains light having at least one of an epoxy group and an episulfide group and a (meth)acryl fluorenyl group, and a thermosetting compound. The curable compound preferably contains light having an epoxy group and a (meth)acryl fluorenyl group and a thermosetting compound (hereinafter also referred to as a partially (meth) acrylate epoxidized epoxy resin). The above (meth)acrylic acid vinegar means acrylic or decyl acrylate. The above-mentioned partial (meth) acrylated epoxy resin is obtained, for example, by reacting an epoxy resin with (meth)acrylic acid in the presence of a basic catalyst according to a usual method. It is preferred to convert (4) or more of the epoxy group to a (meth) propylene (conversion) and partially (meth) acrylate. More preferably, 50% of the epoxy group is converted to a (meth) acrylonitrile group. From the viewpoint of improving the hardenability of the anisotropic conductive material, a preferred lower limit of the content of the above-mentioned partial (meth)propionic acid acetated epoxy resin in the weight % of the curable compound is ο"% by weight, A lower limit is preferably 〇·5% by weight, a higher limit is preferably 2% by weight, and a higher limit is 丨5% by weight. Examples of the epoxy (meth)acrylic acid vinegar include a double-type epoxy (meth)acrylic acid vinegar, a f-four (four) varnish-type epoxy (meth)acrylic acid vinegar, and a tauric anhydride-modified epoxy resin ( Methyl acrylate vinegar, and phenol phenolic acrylate). Milk (A thermosetting agent) The above-mentioned thermosetting agent is not particularly limited. As the above-mentioned thermosetting agent, a conventionally known thermosetting agent can be used. Examples of the above-mentioned thermosetting agent include (4) a curing agent, an amine curing agent, and a weighting agent. A 丨, 4 thiol hardener, acid field, etc. l5039S.doc •33· 201129273 The above-mentioned heat curing agent may be used alone or in combination of two or more. The above heat curing agent is preferably an imidazole hardener or a poly A thiol hardener or an amine hardener, which is because the anisotropic conductive material can be hardened more rapidly at a low temperature. Further, a latent hardener is preferred because the anisotropic conductive material can be improved. Storage stability. The latent hardener is preferably a latent imidazole hardener, a latent polythiol hardener or a latent amine hardener. The above heat hardener may also be a polyamine phthalate resin or polyester. The imidazole curing agent is not particularly limited, and examples thereof include 2—nonyl imidazole, 2-ethyl-4·nonyl imidazole, and cyanoethyl 2-phenylimidazole. Cyanoethyl-2-phenylimidazolium Acid salt, 2,4-diamino]6_[2|-methylimidazolyl·(1,)]-ethyl-all-three and 2,4-diamino- 6 [2, methyl- oxazole The base (I1)]-ethyl-allo-three-pigmented isocyanurate addition product, etc. The polythiol hardener is not particularly limited, and examples thereof include trimethylolpropane tri-3, propyl propionic acid. Vinegar, pentaerythritol tetra-3, propyl propyl acrylate, dipentaerythritol hexamethylene propionate, etc. The amine hardener is not particularly limited, and examples thereof include hexamethylene diamine, octamethylene diamine, and ten ya. Methyldiamine, 3,9_bis(3_Aminopropionate 2,4,8,10-tetraspiro[5.5] eleven, bis(4,ylcyclohexyl)methylxyl, m-phenylenediamine And diaminodiphenyl sulfone, etc. The content of the above-mentioned thermosetting agent is 盔 . . . . 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 合 合 合 合 合 合 合 合 合 合 合 合 合 合 合Λ 里里切, the preferred lower limit of the content of the above-mentioned heat hardener is 5 parts by weight, more preferably I: 艮 or Λ壬 _ θ is 10 parts by weight, preferably upper limit is 3 〇 by weight , the upper limit is 20 parts by weight. Times: u β on £ f The content of the above hot hardener meets 150398 .doc -34· 201129273 When the lower limit and the upper limit are better, the anisotropic conductive material can be sufficiently thermally cured (photocuring initiator). The photohardening initiator is not particularly limited. The photohardening initiator may be used alone or in combination of two or more kinds. The photocuring initiator is not particularly limited, and examples thereof include anthraquinone light. Hardening initiator, bismuth photohardening initiator, 9_oxysulfide, condensed photohardening initiator, halogenated _, fluorenylphosphine oxide and oleic acid vinegar, etc. as the above acetophenone light Specific examples of the curing initiator include 4_(2·hydroxyethoxy)phenyl(2-superpropyl)ketone and 2—transalkyl-2-indolyl]-phenylpropan-1-one. Methoxyacetophenone, 2,2. dimethoxy-phenylethyl _= hydrazine, and 2-carbyl-2_cyclohexyl phenylethyl _ and the like. Specific examples of the above-mentioned shrinkage curing initiator include benzoin dimethyl ketal and the like. The content of the above photohardening initiator is not particularly limited. The lower limit of the content of the photohardening initiator is 0.1 part by weight, more preferably 〇2 parts by weight, and the upper limit is 2 parts by weight, and the upper limit is better than 100 parts by weight of the total of the curable compound. 1 part by weight. If the content of the photohardening initiator is such as to satisfy the above preferred lower limit and upper limit, the anisotropic conductive material may be used.

適度地光硬化。藉由抖g A k播A 猎由對異向性導電材料照射光使其B階 化’可抑制異向1 生導電材料之流動。 (導電性粒子) 作為上述異向性導電材料中所含之導電性粒子,例如係 用可將電極間電性連接之先前公知之導電性粒子。上述 J50398.doc -35- 201129273 導電性粒子較好的是於外表面具有導電層之粒子。 電性粒子亦可於導電層之表面附著絕緣粒子居 表面由絕緣詹所包覆。於此情形時,藉由電極之2 = 加壓而去除絕緣粒子或絕緣層。 作::述導電性粒子,例如可列舉:有機粒子、無機粒 有機無機混合粒子、或金屬粒子等之表面由導電層所 包f之導電性粒子’以及實質上僅由金屬所構成之金屬粒 子等。上述導電層並無特別限定。作為上述導電層,可列 舉金層、銀層、銅層、錄層、纪層或含有錫之導電層等。 上述異向性導電材料丨〇〇重量%中上述導電性粒子之 ^量較好的是1〜25重量%之範圍内。上述導電性粒子之含 里之更好下限為5重量%,更好上限為19重量%,進而較好 上限為15重量%,最好上限為1〇重量%。於上述導電性粒 子之3里處於上述範圍内之情形時,可將導電性粒子容易 地配置於應連接之上下電極間。進而,不應連接之相鄰電 極間難以經由複數個導電性粒子而電性連接。即,可防止 相鄰電極間之短路。 (其他成分) 上述異向|·生導電材料亦可含有溶劑。例如,於上述硬化 !·生化D物為固體之情形時,藉由在固體之硬化性化合物中 添加溶劑並使其溶解,可提高硬化性化合物之分散性。作 為上述溶劑,例如可列舉乙酸乙酯、曱基溶纖劑、曱苯、 丙酮曱基乙基鲷、環己烷、正己烷、四氫呋喃及二乙醚 等。 150398.doc -36· 201129273 上述異向性導雷絲姐_ ^ 因在於可提高異㈣邀x &是含有接著力調整劑,其原 杈-異向性導電材料之硬化 步提高接著力之觀點而言接者力。就進-烧偶合劑。 ,捿者力調整劑較好的是石夕 上述異向性冑電材料較 料,可标釗里〜. 町疋3有填科。藉由使用該填 ' °性導電材料之硬化物之 料並無特別限定。脹。上述填 作馮上述填料,可列舉二氧 友 紹及氧化料。上述埴 氧化夕、風化 上。 、’斗可僅使用1種,亦可併用2種以 物二t枓之含量並無特別限定。相對於上述硬化性化合 於十1〇0重量份,上述填料之含量之較好下限為5重量 刀更好下限為15重量份,較好上限為7〇重量份,更好上 為50重里&。右上述填料之含量滿足上述較好下限及上 限’則可充分抑制異向性導電材料之硬化物之潛熱膨服, 進而可使填料於異向性導電材料中充分地分散。 以下,列#實施例及比較例對本發明進行具體說明。本 發明並非僅限定於以下實施例。 (實施例1) (1)含有環硫化合物之混合物之製備 於具備攪拌機、冷卻機及溫度計之2 [之容器内添加乙 醇250 mL、純水250 mL、及硫氰酸鉀20 g,使硫氰酸鉀溶 解,製備第1溶液。其後,將容器内之溫度保持於2〇〜25。匸 之範圍内。其次,一邊對保持於20〜25°C之容器内之第1溶 液進行攪拌,一邊以5 mL/分之速度向該第1溶液中滴加間 150398.doc •37· 201129273 本^一盼一縮水甘油謎1 6 0 g。滴加後,進而授摔3 0分鐘, 獲得含有環氧化合物之混合液。 其次’準備於含有純水1〇〇 rnL與乙醇100 mL之溶液中 溶解有硫氰酸鉀2〇 g之第2溶液。以5 mL/分之速度向所得 之含有環氧基之混合液中添加所得之第2溶液後,攪拌3 〇 为鐘。於攪拌後,進而準備於含有純水1〇〇 與乙醇 爪匕之洛液中溶解有硫氰酸鉀2〇 g之第2溶液,以5 分之 速度向容器内進一步添加該第2溶液,攪拌3〇分鐘。其 後,將容器内之溫度冷卻至1〇<t,攪拌2小時,進行反 應。 其次,向容器内添加飽和食鹽水1〇〇 mL,攪拌1〇分鐘 攪拌後,向容器内進—步添加甲苯3〇〇 mL,攪拌ι〇分鐘 其後’將容器内之溶液移至分液漏斗中,靜置2小時,^ 溶液分離。排出分液漏斗内之下方之溶液,取出上清液 於取出之上清液中添加甲苯· mL,進行攪拌,靜置^ 時。進而’進-步添加甲苯1〇〇 mL,進行攪 : 時。 ’ 八人於添加有甲笨之上清液中添加硫酸鎂50 g,授才 5分鐘。攪拌後,藉由 S 見 氏去除^ I鎂,分離溶液。使月 具工乾無機,於80τ也丨Moderately light hardening. The flow of the anisotropic conductive material can be suppressed by illuminating the anisotropic conductive material to make it B-stage by shaking the light. (Electrically conductive particles) The conductive particles contained in the anisotropic conductive material are, for example, conventionally known conductive particles which can electrically connect the electrodes. The above-mentioned J50398.doc -35- 201129273 conductive particles are preferably particles having a conductive layer on the outer surface. The electric particles may also be coated with insulating particles on the surface of the conductive layer, and the surface is covered by the insulating material. In this case, the insulating particles or the insulating layer are removed by pressing the electrode 2 = under pressure. For example, the conductive particles include, for example, organic particles, inorganic particulate organic-inorganic hybrid particles, or conductive particles coated with a conductive layer on the surface of metal particles, and metal particles substantially composed only of metal. Wait. The above conductive layer is not particularly limited. As the above conductive layer, a gold layer, a silver layer, a copper layer, a recording layer, a layer or a conductive layer containing tin, or the like can be listed. The amount of the above-mentioned conductive particles in the weight % of the anisotropic conductive material is preferably in the range of 1 to 25% by weight. The lower limit of the content of the above conductive particles is 5% by weight, more preferably 19% by weight, still more preferably 15% by weight, and most preferably 1% by weight. When the conductive particles 3 are in the above range, the conductive particles can be easily disposed between the lower electrodes to be connected. Further, it is difficult to electrically connect adjacent electrodes that should not be connected via a plurality of conductive particles. That is, it is possible to prevent a short circuit between adjacent electrodes. (Other components) The above-mentioned anisotropic material may also contain a solvent. For example, in the case where the above-mentioned hardening is a solid, the dispersibility of the curable compound can be improved by adding a solvent to the solid curable compound and dissolving it. Examples of the solvent include ethyl acetate, thiol cellosolve, toluene, acetone decylethyl hydrazine, cyclohexane, n-hexane, tetrahydrofuran, and diethyl ether. 150398.doc -36· 201129273 The above-mentioned anisotropic guide sister _ ^ because it can improve the difference (4) invite x & is the inclusion of the adhesion modifier, the hardening step of the original 杈- anisotropic conductive material improves the force From the point of view, it is the power. Just enter-burn coupler. It is better to use the above-mentioned anisotropic enamel electric material, which can be used in the standard 〜 钊. The material of the hardened material filled with the '° conductive material is not particularly limited. Bulging. The above fillers for filling the above-mentioned fillers include dioxin and oxidized materials. The above 埴 oxidation, weathering. The "bubble" may be used alone or in combination of two kinds of substances. The lower limit of the content of the above filler is 5 parts by weight, and the lower limit is preferably 15 parts by weight, more preferably 7 parts by weight, more preferably 50 parts by weight, relative to the above-mentioned hardening compounding ratio of 10 parts by weight. ; When the content of the filler on the right side satisfies the above preferred lower limit and upper limit, the latent heat expansion of the cured product of the anisotropic conductive material can be sufficiently suppressed, and the filler can be sufficiently dispersed in the anisotropic conductive material. Hereinafter, the present invention will be specifically described with reference to the examples and the comparative examples. The present invention is not limited to the following embodiments. (Example 1) (1) Preparation of a mixture containing an episulfide compound In a vessel equipped with a stirrer, a cooler, and a thermometer, 250 mL of ethanol, 250 mL of pure water, and 20 g of potassium thiocyanate were added to make sulfur The potassium cyanate was dissolved to prepare a first solution. Thereafter, the temperature in the vessel was maintained at 2 Torr to 25 cm. Within the scope of 匸. Next, while stirring the first solution held in a container of 20 to 25 ° C, a solution was added to the first solution at a rate of 5 mL / min. 150398.doc • 37· 201129273 Glycerol mystery 1 6 0 g. After the dropwise addition, the mixture was dropped for 30 minutes to obtain a mixed solution containing an epoxy compound. Next, the second solution in which potassium thiocyanate 2 〇 g was dissolved in a solution containing 100 liters of pure water and 100 mL of ethanol was prepared. After the obtained second solution was added to the obtained epoxy group-containing mixed solution at a rate of 5 mL/min, the mixture was stirred for 3 Torr. After stirring, the second solution in which 2 〇g of potassium thiocyanate was dissolved in a solution containing pure water and xenopus was prepared, and the second solution was further added to the container at a rate of 5 minutes. Stir for 3 minutes. Thereafter, the temperature in the vessel was cooled to 1 Torr <t, and stirred for 2 hours to carry out a reaction. Next, add 1 mL of saturated brine to the vessel, stir for 1 minute, stir, add 3 mL of toluene to the vessel, stir for 1 minute, then move the solution in the vessel to the liquid separation. In the funnel, let stand for 2 hours, ^ solution is separated. The solution below the inside of the separatory funnel was discharged, and the supernatant was taken out. Toluene·mL was added to the supernatant, and the mixture was stirred and allowed to stand. Further, 1 mL of toluene was added in a stepwise manner, and the mixture was stirred. Eight people added 50 g of magnesium sulfate to the supernatant containing the stupid, and gave it for 5 minutes. After stirring, the solution was removed by removing S magnesium from S. Make the moon work dry and inorganic, at 80τ

此去… 對所分離之溶液進行減壓乾燥,I 物。 b,k付了 3有環硫化合物之混4 將氯仿作為溶劑 的1H-NMR之測定。 進行所得之含有環硫化合物之混合物 其結果’表示環氧基之存在的6.5〜7.5 150398.doc •38- 201129273 PPm之區域之訊號減少,於表示環硫基之存在的2 〇〜3 〇 PPm之區域中出現訊號。由此確認到,間苯二驗二缩水甘 油趟之—部分環氧基被轉變成環硫基。又,根據1h_nmr 之測定結果之積分值確認到,含有環硫化合物之混合物含 有間苯二酚二縮水甘油醚70重量%、與具有上述式(1B)所 示之結構之環硫化合物30重量0/〇。 (2) 異向性導電漿料之製備 於所得之含有環硫化合物之混合物3〇重量份中,調配作 為熱硬化劑之胺加合物(Ajinomoto Fine Techno公司製造之 「PN-23J」)5重量份、作為光硬化性化合物之環氧丙烯酸 醋(Daicel-Cytec公司製造之「EBECRYL 3702」)5重量份、 作為光聚合起始劑之醯基氧化膦系化合物(Ciba 公司 製造之「darocur TPO」)〇」重量份、作為硬化促進劑 之2-乙基-4-甲基咪唑1重量份、以及作為填料之平均粒徑 為〇·25 μηι之二氧化矽20重量份及平均粒徑為〇5 之氧化 鋁20重量份,進而以於調配物1〇〇重量%中之含量成為 重® %之方式添加平均粒徑為3 μηι之導電性粒子後,使用 行星式攪拌機以2000 rpm攪拌5分鐘,藉此獲得調配物。 再者’所使用之上述導電性粒子為於二乙烯基苯樹脂粒 子之表面形成有鍍鎳層’且於該鍍鎳層之表面形成有鍍金 層之具有金屬層之導電性粒子。 使用尼龍製濾紙(孔徑為1〇 μηι)過濾所得之調配物,藉 此獲得導電性粒子之含量為1〇重量%之異向性導電漿料。 (3) 連接構造體之製作 150398.doc 39· 201129273 準備於上表面形成有L/S為30 μηι/30 μιη之ITO(Indium Tin Oxide ’氧化銦錫)電極圖案之透明玻璃基板。又,準 備於下表面形成有L/S為30 μηι/3 0 μιη之銅電極圖案之半導 體晶片。 又’準備圖3(a)所示之包含分 作為光照射裝置之紫外線照射燈之複合裝置 邊使複合裝置移動,一邊自分注器之注射器於上述透 月玻璃基板之上表面,以厚度成為30 μιη之方式塗佈所得 之異向性導電漿料’形成異向性導電漿料層。進而,一邊 使複合裝置移動’塗佈異向性導電㈣,—邊使用紫外線 ’、射燈以光照射強度成為50 mw/cm2之方式對異向性導電 _照射·⑽之紫外線,藉由光聚合而使異向性導電 ㈣層塗转、即所塗佈之異向性導電聚料接 ^上述透明玻璃基板之時起至對異向性導電漿料層照射光 為止之時間T為0.5秒。 其次,於已靖化之異向性導電毁料層之上表面,以電 極彼此相對向之方式積層上述半導體晶片。其後,一邊以 異向性導電漿料層之溫度成為185 ^ '^万式调整頭之、、© 度,一邊於半導體晶片之上表 MPa^ r, ^ 。。 戰置加壓加熱頭,施加3 Γ 於C下經崎化之異向性導電漿料卜入 硬化,獲得連接構造體。 s心王 (實施例2) 於製備異向性導電漿料時, 酸脸其田* 衣丙婦酸酶變更為丙稀 酉文胺基甲酸醋(Daicel-Cytec公 巧内烯So go... The separated solution is dried under reduced pressure, I. b, k paid 3 mixtures of epicyclic sulfur compounds 4 Determination of 1H-NMR using chloroform as a solvent. The resulting mixture containing the episulfide compound results in a decrease in the signal of the region of 6.5 to 7.5 150398.doc •38 to 201129273 PPm indicating the presence of the epoxy group, and 2 〇~3 〇PPm indicating the presence of the epoxide group. A signal appears in the area. From this, it was confirmed that a part of the epoxy group of the meta-benzoic dimethyl glycerol was converted into an epoxide group. Further, it was confirmed that the mixture containing the episulfide compound contained 70% by weight of resorcinol diglycidyl ether and 30 parts by weight of the episulfide compound having the structure represented by the above formula (1B) based on the integral value of the measurement result of 1 h_nmr. /〇. (2) Preparation of an anisotropic conductive paste In an amount of 3 parts by weight of the obtained mixture containing an episulfide compound, an amine adduct as a heat hardener ("PN-23J" manufactured by Ajinomoto Fine Techno Co., Ltd.) 5 was prepared. 5 parts by weight of an epoxy acrylate vinegar ("EBECRYL 3702" manufactured by Daicel-Cytec Co., Ltd.) as a photocurable compound, and a fluorenyl phosphine oxide compound as a photopolymerization initiator ("Darocur TPO" manufactured by Ciba Corporation ")" by weight", 1 part by weight of 2-ethyl-4-methylimidazole as a hardening accelerator, and 20 parts by weight and an average particle diameter of cerium oxide having an average particle diameter of 〇·25 μηι as a filler 20 parts by weight of the alumina of 〇5, and further, conductive particles having an average particle diameter of 3 μηη were added so that the content of the compound in the weight % of the compound became a weight %, and then stirred at 2000 rpm using a planetary mixer. In minutes, the formulation is obtained. Further, the above-mentioned conductive particles used are a conductive layer in which a nickel plating layer is formed on the surface of the divinylbenzene resin particles, and a metal layer is formed on the surface of the nickel plating layer. The obtained preparation was filtered through a nylon filter paper (having a pore size of 1 μ μηι), whereby an anisotropic conductive paste having a conductive particle content of 1% by weight was obtained. (3) Fabrication of the connection structure 150398.doc 39· 201129273 A transparent glass substrate having an ITO (Indium Tin Oxide Indium Tin Oxide) electrode pattern having an L/S of 30 μm/30 μm was formed on the upper surface. Further, a semiconductor wafer having a copper electrode pattern having an L/S of 30 μm / 30 μm is formed on the lower surface. Further, when the composite device including the ultraviolet irradiation lamp as the light irradiation device shown in Fig. 3(a) is prepared, the composite device is moved while the syringe from the dispenser is placed on the upper surface of the moon-transparent glass substrate to have a thickness of 30 The resulting anisotropic conductive paste was applied in the form of μηη to form an anisotropic conductive paste layer. Further, while the composite device is moved to "apply anisotropic conduction (four), ultraviolet rays are used, and the ultraviolet light of the anisotropic conductive_(10) is irradiated with a light irradiation intensity of 50 mw/cm2 by light. Polymerization to coat the anisotropic conductive (four) layer, that is, the time T from the time when the coated anisotropic conductive polymer is bonded to the transparent glass substrate to the irradiation of the anisotropic conductive paste layer is 0.5 second . Next, on the upper surface of the anisotropic conductive stripping layer which has been condensed, the semiconductor wafer is laminated with the electrodes facing each other. Thereafter, the temperature of the anisotropic conductive paste layer was adjusted to 185 Ω, and the degree of the surface was MPa^r, ^ on the semiconductor wafer. . The pressure heating head was placed on the surface, and the anisotropic conductive paste which was subjected to a crucible at 3 C was hardened to obtain a joined structure. s heart king (Example 2) When preparing an anisotropic conductive paste, the acid-faced * 妇 妇 妇 变更 变更 变更 D D D D D D D D D D D D D D D D D D D D D D D D D D

J I 造之「EBECRYL 150398.doc 201129273 8804」)’除此以外,與實施例】同樣地獲得異向性導電聚 料使用所知之異向性導電聚料,除此以外,與實施例1 同樣地獲得連接構造體。 (實施例3) 使用圖4(a)所不之分注器與未連接於該分注器之作為光 照射裝置之紫外線照射燈來代替圖3⑷所示之複合裝置, 於異向性導電漿料之塗佈剛結束後照射光,除此以外,盥 實施例1同樣地獲得連接構造體。自塗佈起至照射光為止 之時間T為2秒。 (實施例4) \ 將自塗佈起至照射光為止之時間τ變更為3秒,除此以 外,與實施例3同樣地獲得連接構造體。 (實施例5 ) 於製備異向性導電漿料時,將環氧丙烯酸酯變更為丙烯 酸胺基甲酸酷(Dairp】Ρ *"EBECRYL 150398.doc 201129273 8804"), except for the use of the known anisotropic conductive polymer in the same manner as in the Example, except that the anisotropic conductive material was used. The connection structure is obtained. (Example 3) Instead of the composite device shown in Fig. 3 (4), the dispenser shown in Fig. 4 (a) and the ultraviolet irradiation lamp as the light irradiation device not connected to the dispenser were used for the anisotropic conductive paste. The connection structure was obtained in the same manner as in Example 1 except that the light was irradiated immediately after the application of the material. The time T from the application to the irradiation of light was 2 seconds. (Example 4) The connection structure was obtained in the same manner as in Example 3 except that the time τ from the application to the irradiation of light was changed to 3 seconds. (Example 5) In the preparation of the anisotropic conductive paste, the epoxy acrylate was changed to acrylamide (Dairp) Ρ *

曰⑽1ceKytec公司製造之「EBECRYL 8 804」)’除此以外,盥寄 〜貫知例3同樣地獲得異向性導電漿 料°使用所得之異向性莫φ Π I"生ν電漿料,除此以外,與實施例3 同樣地獲得連接構造體。 (參考例1) 於製作異向性導雷喈祖性 守电漿枓時,不使用作為光聚合起始劑之 酿基氧化膦系化合物,除 示此以外,與貫施例1同樣地獲得 異向性導電漿料。 :;上表面形成有L/S為30 μηι/30 μηι之ΙΤΟ電極圖案 之透明玻璃基板。又,準= 旱備於下表面形成有L/S為30 150398.doc -41 - 201129273 μιη/30μιη之銅電極圖案之半導體晶片。 自分注器之注射器於上述透明玻璃基板之上表面,以严 度成為30 μιη之方式塗佈所得之異向性導電漿料,形成2 向性導電漿料層。於塗佈時及塗佈後不照射光。 、 其人於異向性導電聚料層之上表面以電極彼此相對向 之方式積層上述半導體晶片。其後,一邊以異向性導電喂 料層之溫度成為185°c之方式調整頭之溫度,—邊於半導 體晶片之上表面載置加屡加熱頭,施加3略之遷力,於 下使異向性導電漿料層完全硬化,獲得連接構造 (評價) ⑴塗佈前之異向性導電漿料之點度 t駐型黏度計(東機產業公司製造),於饥及2.5啊 之條件下進行測定。 (2) 洩漏評價 θ =用所得之連接構造體,以測試機測定相鄰電極20個中 疋否發生洩漏。 (3) 空隙之有無 測:接構造體中,自透明玻璃基板之下表面側目 空隙:一丨生導電漿料層所形成之硬化物層中是否產生 將結果示於下述表1。 150398.doc .42- 201129273 [表i]10(10) "EBECRYL 8 804" manufactured by 1ceKytec Co., Ltd.) In addition, the anisotropic conductive paste obtained by using the anisotropic conductive paste was obtained in the same manner as in Example 3, and the anisotropic φ Π I" A connection structure was obtained in the same manner as in Example 3 except for the above. (Reference Example 1) The same procedure as in Example 1 was carried out except that the phosphatide-based phosphine-based compound which is a photopolymerization initiator was not used in the production of the anisotropy-guided sputum-derived plasmon. Anisotropic conductive paste. : A transparent glass substrate having an electrode pattern of L/S of 30 μm/30 μηι is formed on the upper surface. Further, a semiconductor wafer having a copper electrode pattern having an L/S of 30 150398.doc -41 - 201129273 μm / 30 μιη was formed on the lower surface. The syringe from the dispenser was applied to the upper surface of the transparent glass substrate to apply the obtained anisotropic conductive paste to a thickness of 30 μm to form a biaxial conductive paste layer. No light is applied at the time of coating and after coating. The person stacks the semiconductor wafer on the upper surface of the anisotropic conductive polymer layer with the electrodes facing each other. Thereafter, the temperature of the head is adjusted so that the temperature of the anisotropic conductive feed layer becomes 185 ° C, and the heating head is placed on the upper surface of the semiconductor wafer, and a slight shift force is applied to the lower surface. The anisotropic conductive paste layer is completely hardened, and the connection structure is obtained (evaluation). (1) The point of the anisotropic conductive paste before coating, the t-type viscometer (manufactured by Toki Sangyo Co., Ltd.), under conditions of hunger and 2.5 ah The measurement was carried out. (2) Leakage evaluation θ = The resulting connected structure was used to measure whether or not leakage occurred in 20 adjacent electrodes by a tester. (3) The presence or absence of voids: In the bonded structure, from the lower surface side of the transparent glass substrate, the voids were generated in the cured layer formed by the conductive paste layer. The results are shown in Table 1 below. 150398.doc .42- 201129273 [Table i]

實施例卜5中,以分注器所塗佈之異向性導電材料Μ 液之前硬化,因此不會較塗佈寬度更為擴展,異向雷 材料不會無意地超出至特定區域以外。 【圖式簡單說明】 圖1係示意性地表示藉由本發明之—實㈣態之 =之製造方法而獲得之連接構造體的部分切缺前視剖面 之係用以對本發明之-實施形態之連接構⑼ k方法之各步驟進行說明的部分切缺前視剖面圖; 圖3(a)及(b)係用以對本發一 " 之製造方W & '"之貫施形態之連接構造體 ',使用包含分注器與光照射裴置之複人# 置,形成經B階化之異佘地 复口裝 模式前視U 、°性以材料層之方法進行說明的 ⑷及㈨係用以對形成㈣階化之異 之方法之變形例進行說明的模式前視圖。电材抖層 【主要元件符號說明】 1 連接構造體 2 第1連接對象構件 150398.doc •43· 201129273 2a 上表面 2b 電極 3 硬化物層 3 a 上表面 3A 異向性導電材料層 3B 經B階化之異向性導電材料層 4 第2連接對象構件 4a 下表面 4b 電極 5 導電性粒子 11 複合裝置 12 分注器 12a 注射器 12b 握持部 13 光照射裝置 13a 光照射裝置本體 13b 光照射部 21 光照射裝置 21a 光照射裝置本體 21b 光照射部 31 平台 150398.doc -44-In the embodiment 5, the anisotropic conductive material smear coated by the dispenser is hardened before, so that it does not spread more than the coating width, and the metamaterial is not inadvertently exceeded beyond the specific region. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a partially cut front cross-sectional view of a joined structure obtained by the manufacturing method of the present invention, which is used in the embodiment of the present invention. The partial cut-away front cross-sectional view of each step of the connection configuration (9) k method; FIG. 3 (a) and (b) are used for the manufacturing method of the manufacturer of the present invention "" The connection structure ', using a combination of a dispenser and a light irradiation device, forms a B-staged heterogeneous refilling mode front view U, and the method of material layer is described (4) and (9) A mode front view for explaining a modification of the method of forming the (fourth) step. Electrical material shaking layer [Main component symbol description] 1 Connection structure 2 First connection object member 150398.doc •43· 201129273 2a Upper surface 2b Electrode 3 Hardened layer 3 a Upper surface 3A Anisotropic conductive material layer 3B Orthogonal conductive material layer 4 second connection target member 4a lower surface 4b electrode 5 conductive particle 11 composite device 12 dispenser 12a syringe 12b grip portion 13 light irradiation device 13a light irradiation device body 13b light irradiation portion 21 Light irradiation device 21a Light irradiation device body 21b Light irradiation portion 31 Platform 150398.doc -44-

Claims (1)

201129273 七、申請專利範圍: 1· -種連接構造體之製造方法,其包含以下步驟: 於第1連接對象構件之上表面塗佈包含導電性粒子之 '、向丨生導電材料,形成異向性導電材料層; 藉由對上述異向性導電材料層照射《,而$行上述異 • 向性導電材料層之硬化,使上述異向性導電材㈣B階 化,及 於經B階化之上述異向性導電材料層之上表面進 層第2連接對象構件,藉由對經b階化之上述異向性 ::料層賦予熱,而使該經_化之異向性導電材料層硬 2·如請求項1之連接構造體之製造方法,其中 替於形成上述異向性導電材料層之步驟與使上述異向性 ‘電材料層B階化之步驟中, 自塗佈上述異向性導電材料起至照射光為止之時 0〜3秒之範圍内。 马 3.如請求項1之連接構造體之製造方法,其中 於形成上述異向性導電材料層之步驟與使上述異向性 導電材料層B階化之步驟中, 一邊塗佈上述異向性導電材一 電材料層照射光。 ㈣上述異向性導 4·如請求項3之連接構造體之製造方法,其中 於形成上述異向性導電材料 寸層之步驟與使上述異向性 導電材料層B階化之步驟中, 150398.doc 201129273 自塗佈上述異向性導電材料起至照射光為止之時間為 0〜3秒之範圍内。 5·如請求項1之連接構造體之製造方法,其中 於形成上述異向性導電材料層之步驟與使上述異向眭 導電材料層B階化之步驟中, 於塗佈上述異向性導電材料之同時、或於塗佈後立即 對上述異向性導電材料層照射光。 6.如請求項5之連接構造體之製造方法,其中 於形成上述異向性導電材料層之步驟與使上述異向性 導電材料層B階化之步驟中, 自塗佈上述異向性導電材料起至照射光為止之時間 0〜3秒之範圍内。 曰一 7·如請求項1至6中任一項之連接構造體之製造方法,其中 作為上述異向性導電材料,使用包含硬化性化合物、 熱硬化劑、光硬化起始劑及導電性粒子之異向 料。 〒电材 8.如請求項1至6中任—項之連接構造體之製造方法,其中 於形成上述異向性導電材料層之步驟與使上述異向 導電材料層B階化之步驟中, 使用包含分注器與連接於該分注器之光照 合裝置。 、直之< 9·如請求項7之連接構造體之製造方法,其令 導述異向性導電材料層之步驟與使上述異向,丨 導電材料層B階化之步驟中, 150398.doc 201129273 使用 合裝置 包含分注器與連接於該分注器之光照射裝置之複 150398.doc201129273 VII. Patent Application Range: 1. A method for manufacturing a connection structure, comprising the steps of: coating a surface containing a conductive particle on a surface of a first connection member; a layer of a conductive material; by irradiating the layer of the anisotropic conductive material, and performing the hardening of the layer of the above-mentioned anisotropic conductive material to make the anisotropic conductive material (4) B-staged and B-staged And a surface of the second connecting object is formed on the surface of the anisotropic conductive material layer, and the anisotropic conductive material layer is formed by imparting heat to the b-st oriented anisotropy: material layer. The manufacturing method of the connection structure of claim 1, wherein the step of forming the anisotropic conductive material layer and the step of arranging the anisotropic electrical material layer are self-coated The directional conductive material is in the range of 0 to 3 seconds from the time of the irradiation of the light. The manufacturing method of the connection structure of claim 1, wherein the step of forming the anisotropic conductive material layer and the step of grading the anisotropic conductive material layer are performed by applying the anisotropy A layer of electrically conductive material illuminates the light. (4) The above-mentioned anisotropic guide 4, wherein the method of manufacturing the connection structure of claim 3, wherein the step of forming the anisotropic conductive material layer and the step of grading the anisotropic conductive material layer, 150398 .doc 201129273 The time from the application of the above anisotropic conductive material to the irradiation of light is in the range of 0 to 3 seconds. 5. The method of manufacturing the connection structure of claim 1, wherein the step of forming the anisotropic conductive material layer and the step of grading the anisotropic conductive material layer B are performed by applying the anisotropic conductive The anisotropic conductive material layer is irradiated with light at the same time as the material or immediately after coating. 6. The method of manufacturing a connection structure according to claim 5, wherein in the step of forming the anisotropic conductive material layer and the step of grading the anisotropic conductive material layer, self-coating the anisotropic conductive The material is in the range of 0 to 3 seconds from the time of irradiation to light. The method for producing a bonded structure according to any one of claims 1 to 6, wherein the anisotropic conductive material contains a curable compound, a heat hardener, a photohardening initiator, and a conductive particle. The opposite material. The method for manufacturing a connection structure according to any one of claims 1 to 6, wherein in the step of forming the anisotropic conductive material layer and the step of grading the opposite conductive material layer, A light combining device including a dispenser and connected to the dispenser is used. And the method of manufacturing the connection structure of claim 7, wherein the step of guiding the anisotropic conductive material layer and the step of arranging the anisotropic, bismuth conductive material layer are 150398.doc 201129273 The use of the device includes a dispenser and a light irradiation device connected to the dispenser 150398.doc
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